IDW ’13

THE 20TH INTERNATIONALDISPLAY WORKSHOPS
Special Topics of Interest on• Oxide TFT• Augmented Reality and Virtual Reality• Lighting Technologies

Final Programsa
ver ryanni

http://www.idw.ne.jp/• LC Science and Technologies (LCT)• Active Matrix Displays (AMD)• FPD Manufacturing, Materials
and Components (FMC)• Plasma Displays (PDP)• EL Displays and Phosphors (PH)• Field Emission Display and CRT (FED)• OLED Displays and Related Technologies (OLED)• 3D/Hyper-Realistic Displays and Systems (3D)
• Applied Vision and Human Factors (VHF)• Projection and Large-Area Displays
and Their Components (PRJ)• Electronic Paper (EP)• MEMS and Emerging Technologies
for Future Displays and Devices (MEET)• Display Electronic Systems (DES)• Flexible Displays (FLX)• Touch Panels and Input Technologies (INP)

IDW ’13
FINAL PROGRAM

IDW ’13 Secretariat:
c/o Bilingual Group Ltd.
3-3-6 Kudan Minami, Chiyoda-ku,
Tokyo 102-0074, Japan
Phone：+81-3-3263-1345
FAX：+81-3-3263-1264
E-mail：idw@idw.ne.jp

Workshops on

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20

IDW

Sapporo Convention Center
Sapporo, Japan
December 4(Wed) – 6(Fri), 2013

CONTENTS
Program Highlights................................................................................. 7
General Information.............................................................................. 12
Travel Information................................................................................. 15
Plenary Sessions
Wednesday, December 4
IDW ’13 Opening.................................................................................. 20
IDW ’13 Keynote Addresses................................................................. 20
IDW ’13 The 20th Anniversary Address................................................ 21
Special Topics of Interest on Oxide TFT
Wednesday, December 4
AMDp1 Poster : Oxide TFT................................................................... 22
AMDp2 Poster : Active-Matrix Devices.................................................. 25
AMDp3/OLEDp2 Poster : AMOLED...................................................... 25
Thursday, December 5
FMC3 Oxide TFT: Process Technologies........................................... 25
FLXp Poster : Flexible Display Technologies...................................... 27
AMD2 Oxide TFT: Applications........................................................... 27
AMD3 Oxide TFT: Reliability (1)......................................................... 29
AMD4 Oxide TFT: Reliability (2)......................................................... 30
AMD5 Oxide TFT: Modeling & Devices............................................... 31
Friday, December 6
FMCp Poster : FPD Manufacturing, Materials & Components............ 32
FLX6 Flexible Oxide TFT................................................................... 33
Special Topics of Interest on Augmented Reality and Virtual Reality
Wednesday, December 4
VHFp1 Poster : Applied Vision & Human Factors (AR)........................ 34
PRJ1 Projection AR........................................................................... 34
INP2/DES2 AR/VR Interactive Systems............................................... 35
Thursday, December 5
3D1
Practical 3D Systems............................................................... 36
DES3 Human Perceptions in Augmented Reality.............................. 37
DESp Short Presentation: Display Electronics & Systems................. 38
DES4/VHF1 Sensing Technologies for Virtual/Augmented Reality....... 38
DESp Poster : Display Electronics & Systems.................................... 39

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Special Topics of Interest on Lighting Technologies
Wednesday, December 4
OLEDp1 Poster : OLED Technologies................................................... 40
Thursday, December 5
PHp
Poster : Phosphors................................................................... 41
OLED5 OLED for Lighting Application.................................................. 42
Friday, December 6
PH3
Phosphors for Lighting............................................................. 43
FMCp Poster : FPD Manufacturing, Materials & Components............ 44
FMC8 Lighting Technologies.............................................................. 45
Workshop on LC Science and Technologies
Wednesday, December 4
LCT1 Keynote & Special Session (1)................................................ 47
LCT2 Special Session (2).................................................................. 48
Thursday, December 5
LCT3 Display Mode (1)...................................................................... 49
LCT4 LC Materials............................................................................. 50
LCTp1 Poster : LC Alignment............................................................... 51
LCTp2 Poster : Evaluation.................................................................... 54
LCTp3 Poster : Display Mode............................................................... 56
LCTp4 Poster : LC Applications........................................................... 59
LCTp5 Poster : Blue Phase.................................................................. 63
Friday, December 6
LCT5 Display Mode (2)...................................................................... 65
LCT6 Evaluation................................................................................ 66
LCT7 Photo Alignment...................................................................... 67
Workshop on Active Matrix Displays
Wednesday, December 4
AMDp1 Poster : Oxide TFT................................................................... 69
AMDp2 Poster : Active-Matrix Devices.................................................. 72
AMDp3/OLEDp2 Poster : AMOLED...................................................... 75
Thursday, December 5
AMD1 Advanced Si TFT..................................................................... 76
AMD2 Oxide TFT: Applications........................................................... 78
AMD3 Oxide TFT: Reliability (1)......................................................... 79
AMD4 Oxide TFT: Reliability (2)......................................................... 81
AMD5 Oxide TFT: Modeling & Devices............................................... 82

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Friday, December 6
AMD6 Novel Applications................................................................... 83
AMD7 Printed TFT.............................................................................. 85
Workshop on FPD Manufacturing, Materials and Components
Wednesday, December 4
FMC1 The 20th Anniversary: Past, Present, and Future (1).............. 87
FMC2 The 20th Anniversary: Past, Present, and Future (2).............. 88
Thursday, December 5
FMC3 Oxide TFT: Process Technologies........................................... 89
FMC4 Materials.................................................................................. 90
FMC5/FLX1 Flexible Materials............................................................. 92
FMC6 Optical Films............................................................................ 93
FMC7 Manufacturing.......................................................................... 94
Friday, December 6
FMCp Poster : FPD Manufacturing, Materials & Components............ 95
FMC8 Lighting Technologies............................................................ 104
Workshop on Plasma Displays
Wednesday, December 4
PDP1 Advanced Materials & Discharge........................................... 106
PDP2 Large Screen & Discharge Applications................................ 107
Workshop on EL Displays and Phosphors
Thursday, December 5
PHp
Poster : Phosphors................................................................. 109
PH1
Phosphors & Their Applications (1)....................................... 115
PH2
Phosphors & Their Applications (2)....................................... 116
Friday, December 6
PH3
Phosphors for Lighting........................................................... 117
FED2/PH4 Applications & New Materials........................................... 118
Workshop on Field Emission Display and CRT
Friday, December 6
Opening.............................................................................................. 120
FED1 Novel Devices & Applications................................................ 120
FED2/PH4 Applications & New Materials........................................... 121
FED3 Fabrication Process & CNT Emitters..................................... 122
FED4 FE Materials & Mechanisms.................................................. 123

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Workshop on OLED Displays and Related Technologies
Wednesday, December 4
OLEDp1 Poster : OLED Technologies................................................. 125
AMDp3/OLEDp2 Poster : AMOLED.................................................... 130
Thursday, December 5
OLED1 Materials & Devices............................................................... 131
OLED2 Display Technologies............................................................. 133
OLED3 Flexible & Backplane Technologies........................................ 134
OLED4 Process Technologies............................................................ 135
OLED5 OLED for Lighting Applications.............................................. 137
Workshop on 3D/Hyper-Realistic Displays and Systems
Wednesday, December 4
3Dp
Poster : 3D & Hyper-Realistic Displays.................................. 139
Thursday, December 5
3D1
Practical 3D Systems............................................................. 145
3D2/VHF2 Visual Comfort for 3D Display........................................... 146
3D3
Holography............................................................................. 148
Friday, December 6
3D4
3D Display (1)........................................................................ 149
3D5
3D Display (2)........................................................................ 150
Workshop on Applied Vision and Human Factors
Wednesday, December 4
VHFp1 Poster : Applied Vision & Human Factors (AR)...................... 152
VHFp2 Poster : Applied Vision & Human Factors............................... 152
Thursday, December 5
DES4/VHF1 Sensing Technologies for Virtual/Augmented Reality..... 155
3D2/VHF2 Visual Comfort for 3D Display........................................... 156
Friday, December 6
VHF3 Improving Visual Experience................................................. 157
VHF4 Visual Perception................................................................... 158
VHF5 Color...................................................................................... 159
VHF6 Display Parameters & Human Performance.......................... 160
Workshop on Projection and Large-Area Displays and Their Components
Wednesday, December 4
PRJ1 Projection AR......................................................................... 162
PRJ2 Projection Components......................................................... 163
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Thursday, December 5
PRJ3 Projection Technologies......................................................... 164
PRJ4 Laser & Speckle Reduction................................................... 165
PRJp Short Presentation: Projection............................................... 167
PRJp Poster : Projection.................................................................. 167
Workshop on Electronic Paper
Wednesday, December 4
EP1
New Displays......................................................................... 169
EP2Electrochromic Displays........................................................ 170
Thursday, December 5
EP3Electrophoretic Displays........................................................ 171
EP4
Evaluations............................................................................ 172
EPp
Short Presentation: Electronic Paper..................................... 173
EPp
Poster : Electronic Paper........................................................ 173
Workshop on MEMS and Emerging Technologies for Future Displays and Devices
Thursday, December 5
Opening.............................................................................................. 176
MEET1 Fundamental Components & Process Technologies............ 176
MEET2 EL Quantum Dots Technologies........................................... 177
MEET3 Emerging Quantum Dots Technologies................................ 179
MEET4 Novel Materials & Components............................................ 180
MEET5 MEMS Imaging & Sensing.................................................... 181
Workshop on Display Electronic Systems
Wednesday, December 4
Opening.............................................................................................. 183
DES1 Vehicle Applications............................................................... 183
INP2/DES2 AR/VR Interactive Systems............................................. 184
Thursday, December 5
DES3 Human Perceptions in Augmented Reality............................ 185
DESp Short Presentation: Display Electronics & Systems................... 186
DES4/VHF1 Sensing Technologies for Virtual/Augmented Reality..... 186
DESp Poster : Display Electronics & Systems..................................... 187
Friday, December 6
DES5 Display Driving (1)................................................................. 189
DES6 Display Driving (2)................................................................. 190
DES7 Low Power Systems.............................................................. 191
DES8 Display Electronic Systems................................................... 192

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Workshop on Flexible Displays
Thursday, December 5
FLXp Poster : Flexible Display Technologies.................................... 193
FMC5/FLX1 Flexible Materials........................................................... 195
Opening.............................................................................................. 196
FLX2 Advanced Processes for Flexible Displays............................ 196
FLX3 Carbon Related Materials...................................................... 197
Friday, December 6
FLX4 Substrates & Materials for Flexible Displays.......................... 198
FLX5 Advanced Devices & Materials.............................................. 199
FLX6 Flexible Oxide TFT................................................................. 200
Workshop on Touch Panels and Input Technologies
Wednesday, December 4
INP1 Touch Panel (1) & Haptics..................................................... 202
INP2/DES2 AR/VR Interactive Systems............................................. 203
Thursday, December 5
INPp Poster : Touch Panel............................................................... 204
INP3 Touch Panel (2)...................................................................... 205
INP4 3D/2D Imaging Systems........................................................ 206
IDW ’13 Committees........................................................................... 208
Floor Map........................................................................................... 217
IDW ’13 Timetable........................................................................Pullout
IDW ’13 Special Topics of Interest Navigator................................Pullout
IDW ’13 Session Navigator...........................................................Pullout

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PROGRAM HIGHLIGHTS
The 20th International Display Workshops will be held as IDW ’13 forencouraging aggressive research and development of display
technologies throughout the world and especially in the Asian region.
IDW ’13 focuses on the following three special topics, which are extremely
timely, as well as fifteen active workshops.
Special Topics of Interest on• Oxide TFT• Augmented Reality and Virtual Reality• Lighting Technologies
Workshops on• LC Science and Technologies• Active Matrix Displays• FPD Manufacturing, Materials and Components• Plasma Displays• EL Displays and Phosphors• Field Emission Display and CRT• OLED Displays and Related Technologies• 3D/Hyper-Realistic Displays and Systems• Applied Vision and Human Factors• Projection and Large-Area Displays and Their Components• Electronic Paper• MEMS and Emerging Technologies for Future Displays
and Devices• Display Electronic Systems• Flexible Displays• Touch Panels and Input Technologies
The three-day conference will feature 504 papers, including three keynote
addresses, 115 invited papers and 164 oral presentations, and 222
poster presentations, including 97 late-news papers. Following plenary
session of Keynote and the 20th Anniversary addresses in the
Wednesday morning, presentations will begin and continue in 8 parallel
oral sessions through Friday. Poster sessions and author interviews withdemonstrations will enable participants to discuss topics in detail. IDW’13 will also present “IDW Best Paper Award” and “IDW Outstanding
Poster Paper Award” based on paper originality and technical significanceto information displays. Exhibits by universities and display industryrelated businesses will also be featured from Wednesday to Friday inparallel with workshops. IDW ’13 should be of interest to not only
researchers and engineers, but also managers of companies andinstitutions in the display community.

Special Topics of Interest on Oxide TFT

Oxide TFTs have a long history going back for almost a half century, butthey have been intensively investigated only since the first demonstrationof amorphous oxide semiconductor TFTs in 2004, and have now become
one of the hottest topics in backplane technologies for active-matrix
FPDs. Although we were glad to see and touch the first commercial LCD
products using the oxide TFTs in 2012 and the following OLED televisions
this year, there still remain many technical issues for further evolution
toward better performance, high resolution, robust reliability, lowfabrication temperature, and broader applications. In IDW ’13, the latest
achievements involved in the brand-new challenges of these issues will
be found in the papers marked Special Topics “Oxide TFT” in workshops
for FMC and AMD. Neither should you miss the brilliant invited talks
given by world-leading researchers in oxide TFTs nor the contributed
presentations with outstanding results.

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Special Topics of Interest on Augmented Reality and Virtual
RealityIn recent years, augmented reality (AR) and virtual reality (VR)applications have been making substantial progress with highperformance display devices and sensors including cameras withtracking capabilities. In a special session held under the Projection andLarge-Area Displays and Their Components Workshop, discussion will
be focused on HMD and projection-mapping as new applications ofprojection technology. In the sessions of the Workshop on Display
Electronic Systems (DES), medical systems, perception-based displays,
blue light matters, and perceptual comparison between binocular andmonocular observation are presented as research that focuses onhuman perception in VR/AR. Moreover, viewpoint-estimation and digitalarchiving methods are presented as essential sensing technologies for
VR/AR applications. Regarding the AR&VR topics related to the Touch
Panels and Input Technologies Workshop, Prof. Inami from Keio Univ.
reviews several applications of enhanced human I/O based on modern
biological understanding of sensation, emerging electronic devices, andagile computational methods. These include transparent cockpits, stopmotion goggles, galvanic vestibular stimulation and reality jockeys. A
new hands-free videophone based on Eye-glass with multiple fish-eye
cameras, which attracted great attention at last year’s CEATEC, will bedemonstrated. A novel tablet-based interface provides a quick andaccurate method to manipulate remotely distributed AR objects, forexample, in urban planning. The sessions are organized by the 3D, VHF,
PRJ, DES and INP workshops.

Special Topics of Interest on Lighting Technologies

This Lighting Technologies of STI will cover all aspects of science andtechnologies of lighting including LED lighting, OLED lighting, flexible
lighting, manufacturing of lighting, lighting materials, device structures
for lighting and internal or external efficiency enhancement
technologies.

Workshop on LC Science and Technologies (LCT)This workshop covers topics from fundamental studies to recent
developments in LCD technologies and LC materials. In this 20th
anniversary year “What’s the next display?” is planned with keynote andinvited talks from the viewpoints of the company. In the regular session,
new LCD technologies, such as blue phase LCDs, 3D-LCDs, polymer
stabilized LCDs and photo-alignment LCDs are extensively discussed.
Novel semiconductor LCs and special novel LCD evaluation techniques
are also discussed.

Workshop on Active Matrix Displays (AMD)The AMD workshop has devoted itself to the exchange of scientific andtechnological knowledge for FPD applications, covering the various
technologies of Si-TFT, oxide TFT, organic TFT, OLED, integrated
sensors, flexible devices and novel applications. AMD is recognized as
one of the largest workshops at IDW. Recent paper presentations tend
to focus on oxide TFTs, which may be expected to play a role in theapplications for higher-definition LCD, next-generation OLED and flexible
displays. We highlight the oxide TFT as a special topic of interest (STI),
as we did last year. We devote four sessions to the oxide TFT STI, andthree sessions to AMD alone, which cover a wide area from device/process to applications. The presentations also show promise for theachievement of green and sustainable technologies.

Workshop on FPD Manufacturing, Materials and Components(FMC)
The FMC workshop covers the recent developments and achievementsin the field of flat panel display technologies in manufacturing, materials,
measurements and components. Two special 20th anniversary sessions
8named “Past, Present and Future” are planned, with the top experts intheir fields lined up to speak on this theme. The sessions devoted to
special topics of interests, lighting and oxide TFT, show recent trends.
The joint sessions with the FLX workshop include hot topics. More than
30 oral presentations including 10 invited papers and more than 20
poster papers will be held, showing the progress of the display field.

Workshop on Plasma Displays (PDP)The PDP workshop will present the latest large screen device
technologies and advanced applications. For the advanced plasma
display technologies, elegant protective layers with a significant
improvement of luminous efficiency, and graphene coated electrodematerials with a reduction of material cost of device will be introduced.
Novel large screen panel fabrication technologies for new film-type
plasma tube arrays display were exhibited at I-Zone in SID Display Week
2013, where they won the Best Prototype Award. In our session, thisnew technology will be presented by Shinoda Plasma Co., Ltd. Also,
reproduction of a three dimensional 22.2 multichannel sound systemwith built-in type loudspeaker array for large screen Super Hi-Vision
PDP will be introduced.

Workshop on EL Displays and Phosphors (PH)This workshop presents the latest achievements on devices andphosphors for emissive displays, general lighting and liquid-crystal
backlighting. Invited talks will present emerging technologies such as
wide color gamut LCD, new phosphor applications, new materials forwhite LED lighting and emissive displays. Development tools such as
computational chemistry and structure analysis of phosphor materials
will be also presented.

Workshop on Field Emission Display and CRT (FED)

Field emission display (FED) is a vacuum device similar to the cathoderay tube (CRT) and is one of the most promising flat panel displays
because of several features such as high picture quality, low power
consumption and fast response time. This workshop covers the entire
field of CRT and field emission display technologies. Recent progress inimage sensors and displays with field emitter arrays are presented. New
devices, such as microcolumns with field emitters and photocathodes
with plasmonic antennas are also presented. Furthermore, fabrication
processes, field emission characteristics and various field emittermaterials, such as carbon materials, hafnium nitride and nanocrystalline
silicon, are also discussed.

Workshop on OLED Displays and Related Technologies(OLED)The OLED workshop covers all aspects of the science and technologies
of OLED and other organic devices, ranging from material research,basic device physics to display including backplane technologies andother applications. OLED technologies based on new full-color realizing
methods are reported on, as well as technologies from micro display
viewers to large size TV applications. Material and device architecture
for higher quantum efficiencies, supporting these device technologies
are also presented. In addition, OLED lighting, flexible OLED andsemiconductor material for one of the optimal backplane technologies
with OLEDs are also discussed.

Workshop on 3D/Hyper-Realistic Displays and Systems (3D)This workshop focuses on recent progress in 3D, hyper-realistic display
systems and related visual sciences. It covers acquisition, processing,2D/3D conversion, two-view display, multi-view display, holography, newoptical components, crosstalk, measurement, perception, standardizationand so on for 3D/ hyper-reality display technologies. Invited talks in thisworkshop include topics from the forefront of 3D imaging technologies
and recent research into advanced display systems such as multi-view
9display and holography.

Workshop on Applied Vision and Human Factors (VHF)

The VHF workshop covers all topics on vision, human factors and image
quality relating to information display. The oral and poster sessions
include lively discussions on the latest topics ranging from fundamental
theories to applications. This year, in addition to four VHF oral sessions
on Improving Visual Experience, Visual Perception, Color, and Display
Parameters and Human Performance, we have a joint session with the
DES (Display Electronic Systems) workshop on the theme of AR(Augmented Reality), plus a joint session with the 3D workshop. Both ofthese promise groundbreaking interdisciplinary discussions, in addition
to our regular VHF poster session (and a VHF-AR poster) which enables
participants to quiz presenters in detail. Four distinguished invited talks
will be given in the oral sessions, concerning the latest topics in user
preferences for display luminance, wide-gamut system colorimetry for
UHDTV, perception of surface quality, and observer metamerism
effects.

Workshop on Projection and Large-Area Displays and Their
Components (PRJ)The PRJ workshop covers projection technologies, devices and related
applications. This year, discussions will be focused on miniature opticalsystem technologies for head-mounted displays and head-up displays
such as optical design, solid-state light source, augmented reality andsensing. Leading edge technologies of holographic optics and projection
mapping also will be discussed. There will be 22 presentations including
five invited presentations in total (17 oral and 5 poster presentations).

Workshop on Electronic Paper (EP)This workshop focuses on current topics in electronic paper including
rewritable paper and flexible displays. Developments of e-Paper
technologies are now eagerly demanded for emerging applications of
e-Books, e-Notebooks, electronic shelf labels, and signage etc. Various
novel technologies such as electrophoretic, electrochromic, liquid crystal,and twisting ball displays will be reported on. There will also be reports
on challenging new approaches in e-Paper technologies. Systems,
devices, materials, human factors, evaluations and applications in thisfield are expected to be eagerly discussed.

Workshop on MEMS and Emerging Technologies for Future
Displays and Devices (MEET)

The workshop is unique in covering all aspects of MEMS,
nanotechnologies and emerging technologies concerning future
displays, imaging devices, and emerging electron devices. It seeks tobroaden the horizons of display and imaging technologies into cuttingedge technologies. Research areas such as materials, basic physics
and fabrication process are included. Among all the MEMS and display
conferences in the world, this is the only opportunity for MEMS andcutting-edge technology researchers to gather and discuss such devices.
Authorities in this field are invited from top research institutions aroundthe world. Invited speakers are from Univ. of Cambridge, MIT (QD Vision),
École Polytechnique, CEA-LETI, Kyung Hee Univ., Seoul Nat. Univ.,
Sungkyunkwan Univ., SAIT, ETRI, Univ. of Tokyo and Tohoku Univ.
Together with excellent contributed papers, this workshop invites
participants who wish to open up new fields in displays, imaging devices
and emerging devices.

Workshop on Display Electronic Systems (DES)This workshop covers all aspects of display electronics and systems in
relation to video data processing, interface technologies, cooperative
operations between display components such as cells and backlights,
sensors, and applications to augmented reality (AR). This year, we will
have 26 papers including 14 invited talks and 4 poster presentations
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(excluding late-news papers). The top topic is “blue light,” about which
there are important concerns such as its potential damage to humaneyes and circadian rhythm aberration. This is an indispensable talk fordisplay researchers. In addition, the sessions related to the driving/lowpower technologies for LCD/OLED and vehicle display technologies will
be planned. We will also highlight AR technology as a Special Topics ofInterest (STI) session.

Workshop on Flexible Displays (FLX)

Recently, flexible display technologies are receiving much attention, andthey are spread over a wide range of fields from materials science topractical applications. The hottest sessions cover all aspects of flexible
device / material technologies including OLED, TFT fabrication, substrate,
printing / roll-to-roll processes and evaluation.

Workshop on Touch Panels and Input Technologies (INP)The INP workshop covers all aspects of input technologies on materials,
device production, device structure and systems. We expect that INP will
open up brand new fields by fusing the input and display technologies. In
addition to the recent developments in touch panel technologies, newuser interface technologies such as Eye-glass type devices and themost advanced 3D/2D image sensor technologies and systems arefeatured in this year’s session.

IDW Best Paper Award and IDW Outstanding Poster Paper
Award

IDW will present “IDW Best Paper Award” and “IDW Outstanding Poster
Paper Award”. The award committee of IDW will select the mostoutstanding papers from those presented at IDW ’13. The award
winners will be announced on the IDW website and given a plaque after
the conference.

The 20th Anniversary of IDWThis year will mark the 20th anniversary of International Display
Workshops (IDW ’13). In commemoration of the anniversary, we will
have the 20th anniversary address which will be given by Professor
Shunsuke Kobayashi of Tokyo University of Science Yamaguchi.
Professor Kobayashi, who is the pioneer of displays and also one of thefounders of IDW, will look back on the history of IDW.

Exhibition

The IDW ’13 Exhibition, which will be held from December 4 throughDecember 6, covers materials, components, manufacturing andmeasuring equipment, software systems and other related products
for display devices. Please join in and enjoy discussions at exhibitors’
booths (1F, Lobby).
December 4: 12:40 – 18:00
December 5: 10:00 – 18:00
December 6: 10:00 – 14:00

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GENERAL INFORMATIONSPONSORSHIP

IDW ’13 is sponsored by the Institute of Image Information and Television Engineers (ITE) and the Society for Information Display (SID).

CONFERENCE SITE

Sapporo Convention Center
1-1-1 Higashi-Sapporo 6-jo, Shiroishi-ku,
Sapporo, 003-0006
Phone: +81-11-817-1010 Fax: +81-11-820-4300

ON-SITE SECRETARIAT

Telephone and fax machines for IDW ’13 use will be temporarily set up
in the secretariat room (Room 104) at the Sapporo Convention Center(December 3-6). Phone/Fax: +81-11-837-7011

RECEPTION

A buffet style reception will be held on December 4 from 18:30 to 20:30
at the Conference Hall (1F) in the Sapporo Convention Center. As thenumber of tickets is limited, you are urged to make an advancereservation through the registration website.

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EVENING GET-TOGETHER WITH WINE

A get-together will be held on December 3 from 18:00 to 20:00 at
Restaurant Sora (1F) in the conference site. Wine (Sponsored by
Merck Ltd., Japan) will be served to participants in a relaxedatmosphere for networking.
Registration is available in advance and also on-site. However,advance registration is strongly recommended to speed up yourregistration at the conference site.

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Registration Fees

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REGISTRATIONThe registration fee for IDW ’13 includes admission to the conference
and a CD-ROM of the proceedings. Detailed information will beannounced on the website.
Until Nov. 1
On and After Nov. 2
Individual Member¥ 35,000¥ 45,000(ITE/SID/ASO*)
Non-Member**¥ 45,000¥ 55,000
Student***¥ 8,000¥ 10,000
Life Member of ITE/SID¥ 8,000¥ 10,000
Reception¥ 8,000¥ 10,000*ASO: Academic Supporting Organizations(See p.14 as well as “Supporting Organizations and Sponsors” at theend of each workshop section.)**Non-Member: If you intend to join either ITE or SID, the one year
membership fee will be subsidized by IDW ’13 committee.
***Photocopy of student ID is required.
Please note that the payment of reduced registration fee is accepted
until November 1. The full fee will be charged for payments made on
and after November 2. Also note that the number of reception tickets toregister on site is limited.

Proceedings Data at the Conference Site

We will provide the data on USB flash drives for copying near the registration desk. This data can also be accessed from the web-server via thewireless network only in the Free Wi-Fi Area at the conference site.
For additional proceedings (CD-ROM)
At the conference site
¥ 8,000
Airmail after the conference¥ 15,000
Domestic mail after the conference¥ 10,000
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Payment

Three ways are provided for registration.

(1) e-Registration

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Access the following URL.
http://www.idw.ne.jp/regist.html
e-Registration will be accepted until November 22, 2013.

(2) Mail or Fax Registration

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stratheComplete the registration form (download from the website) and send it
to the secretariat together with all necessary payments no later thanNovember 22, 2013.
IDW ’13 Secretariat
c/o Bilingual Group Ltd.
3-3-6 Kudan Minami, Chiyoda-ku, Tokyo 102-0074, Japan
Phone: +81-3-3263-1345 Fax: +81-3-3263-1264
E-mail: idw@idw.ne.jp
The registration fee should be paid by one of the following methods.
1. Credit Card (VISA, MasterCard, AMEX, JCB or Diners)
2. Bank Transfer to:
Bank:
Bank of Tokyo-Mitsubishi UFJ(Swift Code: BOTKJPJT)
Branch:Ichigaya Branch (Branch No. 14)
Account No.: 1474095 (Ordinary Account)
Account:
IDW
Please attach a copy of the bank receipt with the registration form to
avoid any confusion. Please note that the remittance charges shouldbe paid by the payer.
All above payments should be made in JAPANESE YEN.
Also, please note that personal and traveler’s checks are not accepted.

(3) On-site Registration

Conference registration desk will open:
December 3 (Tue.)
17:00 – 20:00
December 4 (Wed.)
8:00 – 18:00
December 5 (Thu.)
8:00 – 18:00
December 6 (Fri.)
8:00 – 13:00
The on-site registration fee will be payable by:
1. Cash (JAPANESE YEN only)
2. Credit Card (VISA, MasterCard, AMEX or JCB)Bank transfer, bank checks, or personal/traveler’s checks are notaccepted.

Cancellation Policy

Until November 1, cancellation is accepted by writing to IDW ’13 Secretariat to get refunds for registration and reception. For cancellations
received on and after November 2 or no-shows, refunds will not be
made. However, after IDW ’13 closes, a CD-ROM of the proceedings will
be sent to the registrants who have paid the registration fees. If it
becomes difficult to hold IDW ’13 due to the outbreak of infectious
diseases and other unavoidable factors, we will substitute the IDW withthe mail delivery of the IDW ’13 proceedings at a later date to all those
who have registered and completed payment.

INQUIRIESIDW ’13 Secretariat
c/o Bilingual Group Ltd.
3-3-6 Kudan Minami, Chiyoda-ku, Tokyo 102-0074, Japan
Phone:+81-3-3263-1345 Fax: +81-3-3263-1264
E-mail: idw@idw.ne.jp
13

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ACADEMIC SUPPORTING ORGANIZATIONS (ASO)

nd it
than

.

• The Chemical Society of Japan• The Electrochemical Society of Japan• The Illuminating Engineering Institute of Japan• The Imaging Society of Japan• The Institute of Electrical Engineers of Japan• The Institute of Electronics, Information and Communication
Engineers• The Institute of Image Electronics Engineers of Japan• International Electrotechnical Commission• The Japan Ergonomics Society• The Japanese Liquid Crystal Society• The Japan Society of Applied Physics• The Society of Polymer Science, Japan• The Virtual Reality Society of Japan

FUNDS

m to
ould

ted.

• The Asahi Glass Foundation• Hokkaido Tourism Organization• The Murata Science Foundation• National Institute of Information and Communications Technology/
NICT• Sapporo Convention Bureau• The Tateisi Science and Technology Foundation

For final updated information, please visit our website,
http://www.idw.ne.jp/

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SID Display Week 2014
June 1 – 6, 2014
San Diego Convention Center
San Diego, California, U.S.A.
14

gy/

TRAVEL INFORMATIONSACCOMMODATIONSJTB Hokkaido Corp. will handle arrangements for your hotel reservations.
Hotel reservations can be made at the IDW website.
http://www.idw.ne.jp/accommodation.html
Hotel list and the rates are available on the Pullout of this Advance
Program.
JTB Hokkaido Corp.
Corporate Sales Division, Sapporo, IDW ’13 Desk

Sa
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in
a
ra
sn
Sa
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Phone: +81-11-221-4800
Fax: +81-11-222-5102
Office Hours: 9:30-17:30 (Weekdays only)
E-mail: jtb_spktaikai@hkd.jtb.jp
There will be an on-site travel information desk during the conference
period to handle arrangements for transportations.

VISAS

Visitors from countries whose citizens must have visas should apply to
Japanese consular office or diplomatic mission in their respective
countries. For further details, please contact your travel agency or the
local consular office in your country.
Attention: For some countries’ citizens, official documents prepared by
the secretariat will be needed. Please access the IDW website forapplications.
http://www.idw.ne.jp/visa.html

CLIMATE

The average temperature in Sapporo during the conference should bearound 2°C (36°F) in the daytime and -4°C (25°F) at night. From early
December onward, the ground is often covered with snow. Pleasecarefully choose what clothing and footwear you bring with you.

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EXHIBITION
12:40 – 18:00 Wednesday, Dec. 4, 2013
10:00 – 18:00 Thursday, Dec. 5, 2013
10:00 – 14:00 Friday, Dec. 6, 2013

Fu
Sa

Lobby, 1F
Sapporo Convention Center

Sa

15

Sapporo City
Sapporo, the capital of Hokkaido, is the fifth largest city in Japanand is primarily known as the host city for the 1972 WinterOlympics. The development of Hokkaido was started on a large
scale about 150 years ago, when Sapporo was enlarged according to the advice of foreign specialists. Sapporo was built based ona rectangular street grid system. Today the city is well known for its
ramen (a special kind of noodles in soup), beer, and the annual
snow festival held in February.
Sapporo’s winter has plenty of snow, and attracts outdoor lovers
including skiers and snowboarders.

rva-

ance

Ch

Places of Interest
Odori Park
Odori Park divides the city center into north and south. It stretches
for about 1.5 km, covering 12 blocks, and the grounds around the
TV tower located there provide an oasis for people living andworking in the surrounding office district.
In every corner of the park, you will find attractions, monuments,
art work (including pieces by the famous Isamu Noguchi),play-areas, fountains, and of course the beauty of the seasonal
flowers and trees. The park is home to 4,700 trees of 92 species
such as lilacs, elms, Japanese zelkovas, azaleas and cherrytrees. Many events are held here throughout the year including theworld-famous Snow Festival.

ence

ly to
ctive
the

d by
for

Jozankei Onsen (Spa)
A 75-minute bus tour from JR Sapporo station takes you to one of
the largest hot springs in Japan, Jozankei. The history of Jozankei
dates back to 1866, when Miizumi Jozan, an ascetic monk, discovered the hot springs and opened a healing spa on the upper
Toyohira River. The hot spring waters that bubble out of the groundat Jozankei spa resort contain sodium chloride, which is colorless,transparent, and mildly salty. These are common qualities of thewater in Japanese spas.
http://jozankei.jp/en/

d be
early
ease

Susukino
Susukino is the largest nightlife district in the northern part ofJapan. There are said to be some 4,500 bars and restaurants,
including Ramen Yokocho, a famous alley of noodle shops.
Today it’s a bustling nightlife district that gets more crowded witheach passing hour of the evening, but where women can enjoy adrink without having to worry at all about their safety. Recently, hotspring hotels with saunas have become popular.
Further information
Sapporo Official Travel Guide
http://www.welcome.city.sapporo.jp/english/
Sapporo Tourism Association
http://www.sta.or.jp/english/
16

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ACCESS TO SAPPOROCONVENTION CENTER

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100 min.
FlightBeijing,Shanghai,Hong Kong,
Seoul,
Pusan,
Inchon,Taipei,Bangkok, etc.

110 min.
FlightNarita Int’l
Airport(NRT)

100 min.
FlightLimousine Bus
3,000 / 75 min.

Sapporo
New Chitose
Airport
(CTS)

90
min.

HanedaAirport(HND)

Flight

JR Chitose Line Rapid
28 min.

Shin Sapporo Station
850 from the airport

SubwayTozai Line
13 min.

8 min.

Sapporo Station
1,040 from the airport

1 min.

SubwayNanboku Line
6 min.

Odori Station

SubwayTozai Line

Higashi Sapporo
StationT
12
280 from Shin Sapporo Sta.
240 from Sapporo Sta.

10 min. on FootSAPPORO CONVENTION CENTER(as of November 1, 2013)17

Hotel Map
O
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ru

❺
●

❷
●

❸
●

Kita Gojo Teine Ave.

❻
●

North
Exit
SquareJR Sapporo
Sta.

❶
South ●
Exit Square

SapporoSta.

❹●

SubwayOdori
Sta. Area

FormerHakkaido
Government
Office Building

❾
●

❼
●

Sapporo Ekimae-Dori

Botanic Garden of
Hakkaido University

New
Airpo Chitosert
Sosei River

JR Sapporo
Sta. AreaJRHa
k o date LineKita Nijo Ave.

SapporoTV Tower

Odori Park

❽Tozai Line ●●❿Toho Line⓫●
Tanukikoji shopping Arcade

SusukinoToyo
Riv hiraer

Subway Nakajima
Koen Sta. Area

Nanboku Line

Susukino Market

Nijo Fish
MarketN⓯●
200m

JR Sapporo Sta. Area
❶ JR Tower Hotel Nikko Sapporo❷ Keio Plaza Hotel Sapporo❸ Mitsui Garden Hotel Sapporo❹ Hotel Gracery Sapporo❺ Hotel Keihan Sapporo❻ Hotel Route Inn Sapporo Ekimae Kitaguchi
Subway Odori Sta. Area
❼ Sapporo Grand Hotel❽ Tokyo Dome Hotel Sapporo
18

⓭●
●
⓰

Nakajima
Kirin Beer
GardenKoen Sta. ●⓬MinaBridg mi Ohas
hi
e

⓮
●

❾ Hotel Sapporo Garden Palace❿ Hotel Resol Trinity Sapporo⓫ Hotel Sunroute New Sapporo
Subway Nakajima Koen Sta. Area
⓬ Sapporo Park Hotel⓭ Art Hotels Sapporo⓮ Hotel Lifort Sapporo⓯ Hotel Resol Sapporo Nakajimakouen⓰ Hotel North CityN

Exit 1

(food court)

DAIEISuper Market

Shopping Center
IIAS SAPPORO(food court)

HokkaidoBankeNango-doriTozai-line Higashi Sapporo
Subway Station

ouen

Seven-ElevenP
South
Entrance

Sapporo Business Innovation Center
Inter x Cross Creative CenterP

10 min. on Foot

Super Market
Max Value

Riv hiraer

Sapporo Daichi ParkPWest EntranceP

SAPPOROCONVENTIONCENTERP

Route

Exit 2

rea

Ramen

ashi

Sapporo Convention
Center Map
and Directions
12

19

Wednesday

December 4

Plenary Sessions
Wednesday, December 4
9:30 - 9:50

Conference Hall

Opening
Master of Ceremony: K. Azuma, Executive Chair, IDW
Opening Remarks
9:30
Y. Iimura, General Chair, IDW
Y.-S. Kim, Representative of SID
T. Kuroda, Representative of ITE
K. Ishikawa, Program Chair, IDW
9:50 - 11:50

Conference Hall

Keynote Addresses
Co-Chairs:

K. Ishikawa, Program Chair, IDW
M. Kimura, Program Secretary, IDW

Keynote Address - 1 The Future of Mobile Displays
9:50
Y. Takubo
Japan Display, Japan
Recently, mobile devices such as smartphones are leading R&D
activities for LCDs. A number of new technologies have beendeveloped to satisfy tough requirements for mobile use. LTPS has
become the main backplane technology for high pixel density. Tablet
PCs are following the same trend. Developments in frontplane LCD
technologies have been accelerated to improve visual performance andpower efﬁciency to support high pixel density trends.
Keynote Address - 2 Research and Development for Future
10:30
Display
S.-Y. Yoon
LG Display, Korea
With developing liquid crystal display technology, display market moved
to active matrix liquid crystal display. With increasing demand for added
values, the ultra-high deﬁnition was expended on the market, andﬂexible and/or transparent displays have been discussed. In thispresentation, we will discuss technology directions of current and next
generation display.

20

Wednesday

December 4

Keynote Address - 3
11:10

Recent Development of Metamaterials:
Novel Optical Application of Artificially
Structured Materials with Extraordinary
Optical Constant
M. Hangyo
Osaka Univ., Japan----- Break (11:50 - 12:00) ----12:00 – 12:30

Conference HallThe 20th Anniversary Address
Co-Chairs:

Y. Iimura, General Chair, IDW
K. Azuma, Executive Chair, IDW

12:00

The Dawn of IDW and Its Growth over the Past 20
Years: The Tremendous Evolution in Information
Displays
S. Kobayashi
Tokyo Univ. of Sci. Yamaguchi, Japan

21

Plenary

Metamaterials are artiﬁcially structured materials which realize opticalconstants (refractive index, permittivity, permeability, etc.) not obtainedin natural materials. Metamaterials are composed of subwavelength
units called meta-atoms. In this paper, recent development ofmetamaterials ranging from microwave to visible regions is reviewed
with the emphasis on those in the THz region.

Wednesday

December 4

Special Topics of Interest on
Oxide TFT
Wednesday, December 4
13:40 - 16:40

Main Hall C

Poster AMDp1: Oxide TFT
AMDp1 - 1

Investigation on the Oxide TFT Gate Driver Circuits
Using Bias Offset Method
Y. H. Jang, H. N. Cho, W. S. Choi, K. I. Chun, M.-G. Kang,
K. Choo, B. Cho, J. U. Bae, W. Shin, I. Kang
LG Display, Korea

Novel oxide TFT gate driver circuits using bias offset method has been
investigated. The inverters in the circuit provide offset voltages toprevent operation failure due to charge leakage. Measurement wasdone on the gate driver circuits integrated in FHD panel and the effectis analyzed.
AMDp1 - 2

A 32-in. HD LCD-TV Display Driven by Amorphous
IGZO TFTs
S.-C. Liu, C.-Y. Su, W.-H. Li, L.-Q. Shi, X.-W. Lv, Y.-T. Hu,
H.-J. Zhang, C.-Y. Tseng, Y.-F. Wang, C.-C. Lo, A. Lien*
Shenzhen China Star Optoelect. Tech., China*TCL Corporate Res., China

A 32-in. HD (1366 x 768) LCD-TV by using a-IGZO TFT which was
fabricated at Gen 4.5 glass substrate with IGZO (1:1:1) AC sputteringsystem for TFT-LCD. TFT with an a-IGZO channel layer exhibited goodsubthreshold swing (S.S), Ion/Ioff ratio, threshold voltage and mobilityof 0.15 V/decade, 2 108, 0.08 V and 19.01 cm2/Vs, respectively.
AMDp1 - 3

Electrical Performance Enhancement of a-AZTO by
a Low Temperature Treatment
P.-T. Liu, C.-S. Fuh, L.-F. Teng, Y.-S. Fan, C.-H. ChangNat. Chiao Tung Univ., Taiwan

In this study, a supercritical ﬂuid (SCF) technology is proposed toenhance the electrical performance and reliability of a-AZTO TFTs. The
SCF provides liquid-like solvency and gas-like diffusivity, giving it
transport capacity to take the H2O molecules into ﬁlms and terminate
the traps in ﬁlms by the oxidization.

22

Wednesday
AMDp1 - 4

December 4
New a-IGZO TFT Gate Driver Circuit with AC-Driven
Pull-Down Circuit
C.-E. Wu, F.-H. Chen, M.-H. Cheng, C.-L. Lin
Nat. Cheng Kung Univ., Taiwan

This work presents a gate driver circuit using indium-gallium-zinc oxide(a-IGZO) thin-ﬁlm transistors (TFTs). The proposed circuit suppresses
the threshold voltage shifts and completely turns off the a-IGZO TFTs
having negative threshold voltage. Simulation reveals the proposed
gate driver circuit can stably operate with a-IGZO TFT having negative
threshold voltage.
In-Situ Threshold Voltage Shift Monitoring of
Amorphous InGaZnO Thin-Film Transistors

Oxide TFT

AMDp1 - 5

J. H. Kang, E. N. Cho, I. Yun
Yonsei Univ., Korea
Threshold voltage shift (ΔVth) characteristics of amorphous InGaZnO
thin-ﬁlm transistors under positive gate bias stress are investigated andthe monitoring ΔVth from constant current induced drain voltage is
proposed. The extracted ΔVth characteristics are then analyzed using
the stretched exponential model and the characteristics of the subgap
density of states.
AMDp1 - 6

High Reliability of Back Channel Etch-Type TFTs
Using New Oxide Semiconducting Material
M. Ochi, S. Morita, Y. Takanashi, H. Tao, H. Goto,
T. Kugimiya, M. Kanamaru*
Kobe Steel, Japan*Kobelco Res. Inst., Japan

We report successful fabrication of the BCE-type TFTs with Mo/Al/Mo
electrodes using etchant resistive new oxide semiconductor thin ﬁlms. It
is found that the additional annealing process is really effective torestore the TFT surface damage after the BCE process. The TFTs
exhibit a high stress stability under the LNBTS.
AMDp1 - 7

The Study on Sol-Gel IGZO Thin Film Transistors
with Top Polymer Gate Insulators
Y. W. Wang, M. S. Lai, C. Y. Huang, W.-C. Su
Nat. Changhua Univ. of Education, Taiwan

We have investigated the top gate IGZO thin ﬁlm transistors withpolymer gate insulators. Multiple approaches were adopted for
improving device performance. Electron mobility was upgraded almost
103 times for stacking IGZO layers. The device characteristics showeda mobility 0.05 cm2/Vs and an on/off current ratio over 103.

23

Wednesday
AMDp1 - 8

December 4
Process Improvement for Reliability of Oxide TFT
Display
M. Zhang, Y. Zhang, J. Hu, Y. Shi, X. Zhang, Y.-C. Chung,
J.-K. Kim, G. Tion, Y. Xu
Hefei BOE Optoelect. Tech., China

The article studied the relation between oxide TFT (IGZO) process andreliability of product. From experiments, the appropriate conditions
were adopted in the process improvement. The recommended
conditions of IGZO process, such as higher IGZO anneal temperature,
ESL anneal temperature and PVX deposition temperature, were
provided in this paper.
AMDp1 - 9

Self-Aligned Top-Gate a-IGZO Thin-Film Transistor
with N2 Plasma-Treated Source/Drain Regions
S. Chi, X. Xiao, X. He, S. Zhang
Peking Univ., China

Self-aligned top-gate a-IGZO TFT with homogenous source/drain andchannel is fabricated. The low resistance of source/drain regions isachieved using a N2 plasma treatment. After the N2 plasma treatment,
the resistivity of IGZO ﬁlm experiences a sharp decrease. A simple andcost-effective self-aligned top-gate TFT technology is thus
demonstrated.
AMDp1 - 10 Influence of Temperature Annealing on Electrical
Performances of Oxide TFT
B.-L. Yeh, C.-N. Lin, C.-C. Wu, C.-M. Chang, W.-B. Wu,
C.-Y. Chen
AU Optronics, Taiwan
We investigated the impact of the power deposition in etch-stopper
layer (ES layer) and high temperature annealing in the active layer andES layers, respectively for stability of Oxide-TFT. For stability test, thedevices during active layer annealing under positive and negative bias
stress, respectively, exhibited weak shift.
AMDp1 - 11L High Mobility Atmospheric-Pressure-Processed
IGZO TFT with AlOx/IGZO Stack Fabricated by Mist
Chemical Vapor Deposition
M. Furuta, T. Kawaharamura, T. Kaida, D. Wang
Kochi Univ. of Tech., Japan
High-mobility IGZO TFTs were demonstrated at 360˚C with an IGZO
channel and AlOx gate dielectric stack that was deposited by ozoneassisted solution-based atmospheric pressure (AP) process. The
mobility of the AP-processed IGZO TFT signiﬁcantly improved to 12.3
cm2/Vs which is comparable to the value obtained from vacuum
processed IGZO TFTs.

24

Wed./Thu.

December 4/5

13:40 - 16:40

Main Hall C

Poster AMDp2: Active-Matrix Devices
AMDp2 - 8

An AMOLED Pixel Circuit with Negative VTH
Compensation Function
C. Leng, L. Wang, S. Zhang
Peking Univ., China

13:40 - 16:40

Main Hall C

Poster AMDp3/OLEDp2: AMOLED
AMDp3/New Pixel Circuit Using a-IGZO TFTs to Compensating
OLEDp2 - 3 for OLED Luminance Drop of AMOLED Displays
P.-S. Chen, W.-Y. Chang, F.-C. Chang, C.-L. Lin
Nat. Cheng Kung Univ., Taiwan
This work presents a new pixel circuit design adopting amorphous
indium-gallium-zinc-oxide (a-IGZO) thin-ﬁlm transistors (TFTs) thatcompensates for the threshold voltage shift of the driving TFT andameliorates the luminance drop of OLED for active-matrix organic lightemitting diode (AMOLED) display.

Thursday, December 5
9:00 - 10:20

Main Hall A

FMC3: Oxide TFT: Process Technologies
Chair:
Co-Chair:T. Kamiya, Tokyo Inst. of Tech., Japan
T. Arikado, Tokyo Electron, Japan

FMC3 - 1:
9:00

Invited Structural Relaxation, Crystallization, andDefect Passivation in Amorphous In-Ga-Zn-O
T. Kamiya, K. Ide, K. Nomura, H. Kumomi, H. Hosono
Tokyo Inst. of Tech., Japan

Amorphous oxide semiconductor, represented by a-IGZO, is now usedin current FPDs. On the other hand, a-IGZO TFTs require thermal
annealing at 300-400oC for better uniformity and stability. Here, we
discuss structural relaxation, defect annihilation and creation by
thermal annealing in relation to hydrogen and oxygen effects.

25

Oxide TFT

This paper presents an AMOLED pixel circuit which uses a “sourcefollower” to sense VTH, enabling a precise compensation even if theinitial VTH value is negative. In addition, the circuit can compensate for
performance variations of both TFTs and OLED.

Thursday
FMC3 - 2
9:20

December 5
Wet Chemical, Damage Free In-Ga-Zn-O TFT
Processing
P. Vermeulen, P. Janssen, L. Robichaux, C. Allen
Sachem, USA

The results of etching formulations for wet chemical, damage free
IGZO TFT processing are presented. Selective etching of the source/
drain metal can be increased substantially by using SACHEMʼs
proprietary formulations. The use of an etch stop layer to protect the
IGZO channel is therefore not required, allowing for cost effective TFT
processing.
FMC3 - 3
9:40

In-Line Process Monitoring for Amorphous Oxide
Semiconductor TFT Fabrication Using MicrowaveDetected Photoconductivity Decay Technique
H. Goto, H. Tao, S. Morita, Y. Takahashi, A. Hino,
T. Kishi*, M. Ochi, K. Hayashi, T. Kugimiya
Kobe Steel, Japan*Kobelco Res. Inst., Japan

We have investigated the microwave-detected photoconductivity
responses from the amorphous In-Ga-Zn-O (a-IGZO) thin ﬁlms. The
peak values and the lifetime extracted by the reﬂectivity signals werecorrelated with TFT performances. It is concluded that the microwave
photoconductivity decay (µ-PCD) is a promising method for in-line
process monitoring for the IGZO-TFTs fabrication.
FMC3 - 4
10:00

Manufacturing Process of Oxide TFT Using
Solution-Processed Photosensitive Passivation
Layer
M. Takeshita, S. Abe, T. Kojiri, M. Hanmura, T. Goto*,
T. Ohmi*
ZEON, Japan*Tohoku Univ., Japan

We have developed a solution-processed Photosensitive Passivation
Layer (PPL) for an oxide TFT. We have also developed a manufacturing
process for oxide TFT that is suitable for the PPL process. By
controlling the oxygen concentration in the oxide semiconductor, wehave achieved an oxide TFT with the PPL.

26

Thursday

December 5

9:00 - 12:00

Main Hall C

Poster FLXp: Flexible Display Technologies
FLXp - 2

Preparation of Ruthenium Metal and Ruthenium
Oxide Thin Films by a Low-Temperature Solution
ProcessY. Murakami*,**, P. T. Tue**, H. Tsukada**,***, J. Li**,****,
T. Shimoda**,****

Highly conductive ruthenium metal thin ﬁlms and ruthenium oxide ones
were prepared by a solution process at low temperature (e.g., 6.9
10-5 Ωcm at 300 C for Ru0). Their structure and electric properties
depend on the annealing conditions. The process allowed us tofabricate ruthenium electrodes on ﬂexible substrates.
FLXp - 9L

A 5-in. Flexible AMOLED on PEN Substrate Driven
by Ln-IZO TFTs Based on Anodic Aluminum Oxide
H. Xu*, M. Xu*, J. Pang**, J. Zou*, H. Tao*, M. Li*, D. Luo*,
L. Wang*, J. Peng*,***South China Univ. of Tech., China**Guangzhou New Vision Opto-Elect. Tech., China

A ﬂexible AMOLED on PEN (Polyethylene-Napthalate) substrate, withan anodic amorphous Al2O3 as gate insulator, is presented. Throughthe anodic oxidation, the high quality gate insulator was deposited atroom temperature, which ensured good characteristics in the TFTs. The
maximum processing temperature during the fabrication was controlled
below 180oC.
10:40 - 12:25

Main Hall B

AMD2: Oxide TFT: Applications
Chair:
Co-Chair:

M. Wong, Hong Kong Univ. of S&T, Hong Kong
N. Morosawa, Sony, Japan

AMD2 - 1:
10:40

Invited 65-in. OLED TV Developed by Oxide TFT
and Fine Metal Mask Technologies
L.-F. Lin, T.-H. Shih, J.-Y. Lee, W.-H. Wu, S.-C. Wang,
Y.-H. Chen, C.-C. Chen, C.-L. Chen, P. P. Lin, Y.-H. Chen,
S.-J. Yu, C.-H. Liu, H.-C. Ting, H.-H. Lu, L. Tsai, H.-S. Lin,
C.-Y. Chen, L.-H. Chang, Y.-H. Lin
AU Optronics, Taiwan

A 65-in. oxide TFT AMOLED TV panel has been demonstrated. The
side by side OLED device is realized by ﬁne metal mask. The TFT
shows an excellent characteristic̶long range threshold voltage
uniformity is 0.34 V. The dam and ﬁll encapsulation method shows a
simple process procedure and high stability.
27

Oxide TFT

*JSR, Japan**JAIST, Japan***Mitsubishi Materials Elect. Chems., Japan****JST-ERATO, JapanThursday
AMD2 - 2:
11:05

December 5
Invited Flexible AMOLED Display Driven by
Amorphous InGaZnO TFTs
K. Miura, T. Ueda, N. Saito, S. Nakano, T. Sakano,
H. Yamaguchi, I. Amemiya
Toshiba, Japan

Threshold voltage shifts of amorphous In-Ga-Zn-Oxide (a-InGaZnO)
TFTs on plastic substrates against bias-temperature stress werereduced below 0.03 V. We have developed a 10.2-in. WUXGA ﬂexible
AM-OLED display driven by a-InGaZnO TFTs fabricated on atransparent polyimide ﬁlm. We demonstrated an interactive prototype
ﬂexible-display system integrated with a bend-input function.
AMD2 - 3
11:30

12.1-in. WXGA Plastic AMLCDs Driven by Low
Temperature Amorphous IGZO TFTs
S.-Y. Sun, W.-C. Huang, W.-T. Lin, L.-Y. Lin, C.-C. Cheng,
C.-Y. Liu, M.-F. Chiang
AU Optronics, Taiwan

Low temperature a-IGZO TFTs were fabricated successfully on plastic
substrates at 220 C. The ﬂexible reliability of a-IGZO TFTs isinvestigated. For a-IGZO TFTs application in ﬂexible display, it suffers
not only electrical stress but also mechanical stress. It is found thatboth of them would affect the electrical characteristic of a-IGZO TFTs.
AMD2 - 4
11:50

A Novel Embedded Non-Volatile Memory Utilizing
IGZO Conductor Transformation for System-onGlass Application
N. Ueda, S. Katoh, T. Matsuo
Sharp, JapanFor the ﬁrst time, we report a novel application of IGZO transformation
to conductor, as an electrically programmable non-volatile memory. The
transformation is performed by Joule heating of the channel. A very
wide read window and excellent retention are demonstrated. This
memory is fully compatible with standard IGZO TFT process.
AMD2 - 5L
12:10

Electron-Beam-Induced Crystallization of
Amorphous In-Ga-Zn-O Thin Films Fabricated by
UHV Sputtering
T. Kamiya*, K. Kimoto**, N. Ohashi*,**, K. Abe *,Y. Hanyu*, H. Kumomi*, H. Hosono**Tokyo Inst. of Tech., Japan**NIMS, Japan

Microscopic structures of a-In-Ga-Zn-O was studied using S/TEM. To
avoid crystallization, samples were measured without any thinning andprocessing, and low electron-beam voltage/current were employed. It
was conﬁrmed that all the a-IGZO ﬁlms were amorphous irrespective ofhydrogen content. Instead, crystallization was observed when theprobe electron dose was increased.
----- Lunch ----28

Thursday

December 5

13:30 - 14:55

Main Hall B

AMD3: Oxide TFT: Reliability (1)Chair:
Co-Chair:B. D. Ahn, Samsung Display, Korea
H. Hamada, Kinki Univ., Japan

AMD3 - 1:
13:30

Invited Photo-Bias Instability of Metal Oxide Thin
Film Transistors for Next Generation Active Matrix
Display
J. K. Jeong, J. H. Song
Inha Univ., Korea

AMD3 - 2
13:55

Influence of Charge Trapping on Hysteresis in
InGaZnO Thin-Film Transistors under Negative Biasand Illumination Stress
M. P. Hung, D. Wang, J. Jiang, M. Furuta
Kochi Univ. of Tech., Japan

Double-sweeping mode and positive gate pulse mode were used toinvestigate the origin of NBIS induced hysteresis in InGaZnO thin-ﬁlm
transistors (IGZO TFTs). The electrons trapping in an ES bulk, holes
trapping in a GI, and defect generation in channel were dominantmechanism of instability of IGZO TFT under NBIS.
AMD3 - 3
14:15

The Negative-Bias-Illumination-Stress with Channel
Length Dependence in a-IGZO TFTs
J. G. Um, S. H. Park, J. U. Han, J. Jang
Kyung Hee Univ., Korea

We investigated the negative-bias-illumination-stress (NBIS) according
to channel length modulation in amorphous indium gallium zinc oxide(a-IGZO) thin-ﬁlm transistors (TFTs). In this result, we obviously foundthat in the case of longer channel TFT, the ΔVTH had shown verysmaller shift than shorter channel length TFT.
AMD3 - 4
14:35

Photo-Response Elimination of Amorphous
InGaZnO Thin Film Transistors by Introducing a
Mo-doped-ZnO Passivation Layer
Y.-C. Tsai, M.-Y. Tsai, L.-F. Teng, P.-T. Liu, H.-P. D. ShiehNat. Chiao Tung Univ., Taiwan

A Mo-doped ZnO (MZO) with a bandgap ~3.3 eV is adopted toeliminate the wavelength-dependent photo-responses in a-IGZO TFTs.
The MZO passivated a-IGZO TFTs presents ΔVth less than 1 V under
NBIS while the wavelength varied from 360 nm to 620 nm, whereas theunpassivated a-IGZO TFTs exhibits ΔVth around -10 V.
----- Break ----29

Oxide TFT

Degradation mechanisms of oxide TFTs under the negative bias
illumination stress were discussed including the trapping of photocreated hole carriers, the ionization of oxygen vacancy defect and theambient atmosphere interaction. Based on the proposed mechanisms,
the routes to improve the photo-stability of oxide TFTs were proposed.

Thursday

December 5

15:10 - 16:40

Main Hall B

AMD4: Oxide TFT: Reliability (2)Chair:
Co-Chair:J. K. Jeong, Inha Univ., Korea
H. Kumomi, Tokyo Inst. of Tech., Japan

AMD4 - 1:
15:10

Invited Stability of Oxide TFTs
J. Jang, M. Mativenga, J. G. Um, M. D. H. Chowdhury
Kyung Hee Univ., Korea

This paper reviews the electrical instabilities of oxide TFTs undervarious stress conditions such as PBS, NBS, NBIS, PBTS, and highcurrent-stress(HCS).
Degradation
mechanisms
explaining
experimental results are provided. Stability improvement methods, bothprocess-related and device structure-related, are proposed andevidence supporting their feasibility is provided.
AMD4 - 2:
15:35

Invited Enhancement of a-IGZO Oxide TFT
Performance by Novel Method Including Ultraviolet
and Thermal Annealing
B. D. Ahn*, Y. J. Tak*,**, H. J. Kim***Samsung Display, Korea**Yonsei Univ., Korea

We proposed the novel method for enhancement of a-IGZO oxide TFT
performance by ultraviolet and thermal annealing (UVA) treatment andcompared its properties to that of a conventional thermal annealing.
Our UVA-treated TFT had a higher ﬁeld-effect mobility and positivebias-stress stability than those of conventional thermal annealing.
AMD4 - 3
16:00

Effect of Back Channel on the Characteristics of
Solution-Derived Amorphous InZnO Thin-Film
Transistors
Y. Osada, Y. Ishikawa, L. Lu, Y. Uraoka
Nara Inst. of S&T, Japan

We investigated the channel layer thickness dependence on theperformance of amorphous InZnO thin-ﬁlm transistor fabricated byspin-coating process. Decreasing the channel layer thickness improved
the on-current and the ﬁeld effect mobility, signiﬁcantly. Thesephenomena can be explained by the back channel effect.
AMD4 - 4
16:20

Fabrication and Electrical Properties of Highly
Stable Amorphous InGaZnO Thin-Film Transistors
P.-L. Chen, C.-L. Chiang, Y.-L. Chou, S. Li, Y.-F. Liu,
Q. Shang
Shenzhen China Star Optoelect. Tech., China

We have improved the storage stability, gate bias stress stability, andthermal stability of a-IGZO TFTs by tuning the ESL quality. The a-IGZO
TFTs with the high-quality ESL exhibit excellent electric properties andstabilities. A 120 Hz 32-in. UHD resolution TV panel has been developedby using the a-IGZO TFTs.
30----- Break -----

Thursday

December 5

16:50 - 18:10

Main Hall B

AMD5: Oxide TFT: Modeling & Devices
Chair:
Co-Chair:J. Jang, Kyung Hee Univ., Korea
K. Takatori, NLT Techs., Japan

AMD5 - 1:
16:50

Invited Modeling of Transparent Amorphous Oxide
Semiconductor Thin-Film Transistor
K. Abe, H. Kumomi, T. Kamiya, H. Hosono
Tokyo Inst. of Tech., Japan

AMD5 - 2
17:15

Solution-Processed Metal Oxide TFTs for AMOLED
Applications
L.-Y. Lin, C.-C. Cheng, C.-Y. Liu, M.-F. Chiang, S.-Y. Sun,
P.-H. Wu, M.-T. Lee, H.-H. Wang
AU Optronics, Taiwan

Oxide TFT driving OLED was so popular due to its high mobility andperfect stability and uniformity . With solution manufacture, it is capable
to replace the vacuum system and achieve the mask-less process. In
this paper, we introduced the solution type metal oxide manufacture for
4-in. OLED.
AMD5 - 3
17:35

A High Mobility Metal Oxide Thin Film Transistor
with Solution Coating Process
K.-H. Su, D.-V. Pham, A. Merkulov, A. Hoppe, J. Steiger,
R. Anselmann
Evonik Inds., Germany

We fabricate solution-processed metal oxide TFTs with Evonikdeveloped metal oxide based semiconductor and passivation. The
solution material/coating technology can be easily scaled up to larger
substrate size without inﬂuencing device homogeneity andperformance. With high mobility of 20 cm2/Vs, solution-processed TFT
is capable for AMOLED driving, high resolution and other high-end
applications.

31

Oxide TFT

We review operation models for transparent amorphous oxide
semiconductor thin-ﬁlm transistors (TAOS TFTs). After introducing
previous model, a model considering a carrier-density-dependent
mobility and subgap states of TAOS is explained. It reproduces the TFT
characteristics over a wide temperature range, and is applied to extract
annealing effect of subgap sates.

Thu./Fri.
AMD5 - 4L
17:55

December 5/6
Effect of Annealing on Oxygen Content
in SiO2/a-IGZO/SiO2 Stacks
S. Oh, J.-H. Baeck, H. S. Shin, J. U. Bae, W. Shin,I. Kang
LG Display, Korea

The thermal annealing effect of amorphous InGaZnO (a-IGZO)
semiconductor layer sandwiched between top and bottom SiO2 layers
is investigated. We illustrate the dynamics of inter-diffusion of
constituent atoms, especially oxygen, at the IGZO/SiO2 interfaces fordifferent annealing temperatures and correlate them with TFT device
characteristics.
Author Interviews and Demonstrations
18:30 – 19:10

Friday, December 6
9:00 - 12:00

Main Hall C

Poster FMCp: FPD Manufacturing, Materials & Components
FMCp - 15

Effect of Anneal Temperature on Local Structures of
In-Ga-Zn-O Films Evaluated by X-ray Absorption
Fine Structure Analysis
S. Yasuno, M. Inaba, S. Kosaka, S. Morita*, A. Hino*,
K. Hayashi*, T. Kugimiya*, Y. Taniguchi**, I. Hirosawa**
Kobelco Res. Inst., Japan*Kobe Steel, Japan**JASRI, Japan

X-ray absorption ﬁne structure analysis was applied to evaluate theeffect of anneal temperature on local structure of In-Ga-Zn-O ﬁlms. It
was found that the coordination numbers of oxygen around In and Zn
atoms increased with increasing anneal temperature. In contrast, thataround Ga atoms varied only slightly with temperature.
FMCp - 16

Withdrawn

FMCp - 24L Characterization of SiO2/In-Ga-Zn-O Interface byHard X-ray Photoelectron Spectroscopy and X-ray
Reflectometry
I. Hirosawa*, Y. Taniguchi*,**, Y.-T. Cui*, H. Oji*,***JASRI, Japan**SPring-8 Service, Japan

Non-destructive investigation on interface structures between SiO2 andoxide semiconductor In-Ga-Zn-O (IGZO) was performed by X-ray
reﬂectometry and hard X-ray photoelectron spectroscopy (HAXPES),
and suggested that chemical reactions forming silicide occurred
between SiO2 and IGZO. HAXPES signals of silicide depended on SiO2
deposition condition.
32----- Lunch -----

Friday

December 6

13:30 - 14:15

Conference Hall

FLX6: Flexible Oxide TFT
Chair:
Co-Chair:M. Ito, Toppan Printing, JapanK. Uemura, Nippon Steel Sumitomo Metal, Japan

FLX6 - 1L
13:30

High Performance Top-Gate Oxide TFT on Plastic
Substrate for Flexible OLED Displays
H. S. Shin, S. M. Lee, S. Oh, J.-U. Bae, W. Shin,
I. B. Kang
LG Display, Korea

FLX6 - 2L
13:45

Evaluation of Two Flexible Substrate Technologies
by Low Temperature (200oC) IGZO TFT Process
C.-C. Chen, H.-C. Zang, S.-T. Huo, Z.-H. Ling, J. Ma,
X.-F. Li*, L.-L. Chen*, J.-H. Zhang*
Tianma Micro-Elect. Group, China*Shanghai Univ., China

IGZO TFT array was fabricated on a Ployimide (PI) ﬂexible substrate at
200oC. Two methods of laminating the PI substrate on carrier glass
plate have been examined. This paper demonstrated and analyzed the
TFT device performances in terms of the two different lamination
methods.
FLX6 - 3L
14:00

Low-Temperature IGZO TFT Backplane and Its
Application in Flexible AMOLED Displays on
Ultrathin Polymer Films
J.-L. P.J. van der Steen, A. K. Tripathi, J. Maas,
K. van Diesen-Tempelaars, L. van Leuken, G. de Haas,
B. van der Putten, I. Yakimets, F. Li, T. Ellis, T. van Mol,
G. Gelinck, K. Myny*, P. Vicca*, S. Smout*, M. Ameys*,T. H. Ke*, S. Steudel*, M. Nag*, S. Schols*, J. Genoe*,
P. Heremans*, Y. Fukui**, S. Green***Holst Ctr., the Netherlands*imec, Belgium**Panasonic, Japan***Victrex Polymer Solutions, UK

We present a low-temperature metal oxide transistor backplane
technology using PECVD dielectrics. We show successful integration of
the backplane in ﬂexible 200 ppi AMOLED displays on ultrathin polymer
ﬁlms. The displays are encapsulated with a thin-ﬁlm barrier and thetotal stack thickness is less than 150 µm.
Author Interviews and Demonstrations
16:40 – 17:20

33

Oxide TFT

Effect of the underlying buffer layer on device performance of selfaligned top-gate oxide TFTs on plastic substrate was investigated. The
device performance was affected dramatically by various buffer
deposition conditions. We also successfully developed self-aligned topgate oxide TFTs on plastic substrate using optimized buffer deposition
conditions.

Wednesday

December 4

Special Topics of Interest on
Augmented Reality and Virtual Reality
Wednesday, December 4
13:40 - 16:40

Main Hall C

Poster VHFp1: Applied Vision and Human Factors (AR)VHFp1 - 1

A Cognitive Model for Fast Recognition in Images
Displayed by Automotive Augmented Interface
Systems
H. Hasegawa, S. Yano, S. Okabayashi, T. Wake*
Meijo Univ., Japan*Kanagawa Univ., Japan

We have proposed and veriﬁed a new cognitive model, called “Mental
Expansion”, to explain the superiority of automotive Augmented Reality
Interface Systems (ARIS) incorporating AR technologies, over otherautomotive display systems based on visual optical experiments.
14:00 - 15:00

Mid-sized Hall B

PRJ1: Projection AR
Chair:
Co-Chair:

D. Cuypers, imec, Belgium
S. Shikama, Setsunan Univ., Japan

PRJ1 - 1:
14:00

Invited Wearable Communication Device Leads the
Future of Optical Technology
M. Takaso, K. Suzuki, T. Iguchi
Telepathy, USA

The evolution of computing has been occurring in changes in the actual
display and how the user can interface with and communicate. Telepathy
has been targeting to be the ﬁrst wearable communication device, andoptics out of all the technologies supporting Telepathy, will make itpossible to be the one.
PRJ1 - 2:
14:20

Invited Projector-Based Augmented Reality in
Medicine
T. Nakaguchi
Chiba Univ., Japan

Although laparoscopic surgery has substantial merits for patients, it
makes the surgical procedure much difﬁcult and gives large burden on
physicians. Since AR technologies have a potential to address these
problems, we will present current situation and future problem of the
projector-based AR system in Medicine.

34

Wednesday
PRJ1 - 3:
14:40

December 4

Invited Projection Mapping Technology andAdvanced Optical Features of Digital Projectors
H. Yoshida, M. Hanzawa, P. Salvini*, R. Anthony*Christie Digital Syss., Japan*Christie Digital Syss., Canada

Projection mapping is getting a big boom around the world. And most
big mapping events use over 20,000 lumen, Xenon lamp based
Christie projectors. Automatic color management tools, warping andblending functions, and product reliability, etc. are assessed by wellknown mapping designers. Describe the current projection mapping
technology and projector features for projection mapping.
----- Break ----15:40 - 17:20

Mid-sized Hall B

INP2/DES2: AR/VR Interactive Systems
N. Sakata, Osaka Univ., Japan
N. Hashimoto, Citizen Holdings, Japan

INP2/
DES2 - 1:
15:40

Invited Reality Beyond Its Physicality

AR & VR

Chair:
Co-Chair:

M. Inami
Keio Univ., Japan

What are the challenges in creating interfaces that allow a user tointuitively express his/her intentions? Todayʼs HCI systems are limited,and exploit only visual and auditory sensations of technologies. We will
introduce several approaches that use multi/cross modal interfaces
with “implicit interaction” for enhancing human I/O.
INP2/
DES2 - 2:
16:10

Invited A Tablet Interface for Laying Out AR Objects-Outlook of Relationship with Smartphone and ARN. Sakata, R. Nagashima, S. Nishida
Osaka Univ., JapanWe describe a new method for accurate manipulation of AR objects at
a distance. We address this problem and show how combining AR
technology with touch pad operations such as tapping, dragging, andpinching can provide an easy way to position remote AR objects withhigh accuracy.
INP2/
DES2 - 3:
16:35

Invited The Possibility of the Eyeglass-Type Mobile
Phone
T. Horikoshi
NTT DoCoMo, Japan

The possibility of eyeglass-type devices for mobile use is discussed.
We introduce a prototype of a hands-free videophone that can capture
the wearerʼs own face by using seven head-mounted ﬁsh-eye cameras,
and allows video calls to be made without holding the phone.

35

Wed./Thu.

December 4/5
A Cartoon-Character Costume with Active Facial
Expression

INP2/
DES2 - 4
17:00

Y. Oka, M. Yamamoto
Niigata Univ., Japan

We propose a cartoon-character costume. The costume equips a web
camera and display panel. The system of the costume is able tochange facial expressions and looks freely. The actor wearing thecostume is able to play more than one role in the costume of one body.
Author Interviews and Demonstrations
17:20 – 18:00

Thursday, December 5
9:00 - 10:15

Mid-sized Hall B

3D1: Practical 3D Systems
Chair:
Co-Chair:J.-Y. Son, Konyang Univ., Korea
S. Yano, Shimane Univ., Japan

3D1 - 1:
9:00

Invited 3DTV Broadcasting Technologies, Trials, andStandardization Effort in Korea
J. Kim, S. Cho, S.-H. Kim, J. S. Choi
ETRI, Korea

In this paper, recent efforts on development of various 3DTV
broadcasting technologies, ﬁeld trials and standardization from Korea
will be presented. Some technical details of different schemes are
explained, followed by current status and future prospect.
3D1 - 2
9:20

A Service Compatible 3DTV Broadcasting System
Based on MPEG-2 and HEVC
S. Cho, J. Kim, S. Jeong, H.-G. Choo, J. S. Choi, J. Kim
ETRI, Korea

We propose a service-compatible 3DTV system which consists of
3DTV encoder using MPEG-2 and HEVC, auto-synchronizing 3DTV
multiplexer and 3DTV receiver. We verify in this paper that the
proposed 3DTV system guarantees higher video qualities of HDTV aswell as 3DTV than those of the current 3DTV system using AVC/H.264.
3D1 - 3
9:40

Stereoscopic Display System with Integrated
Motion Parallax
M. F. Flynn, J. C. Tu
zSpace, USA

We present a description of a time sequential stereoscopic display
which separates the images using a segmented polarization switch andpassive eyewear. Additionally, integrated tracking cameras and an SDK
on the host PC allow us to implement motion parallax in real time.
36

Thursday
3D1 - 4L
10:00

December 5
Inpainting Embedded Virtualized-Reality Indoor
Modeler
K. Thangamani, T. Ishikawa*, K. Makita, R. Ichikari,
T. Kurata
AIST, Japan*Kodo Lab, Japan

This paper discusses the integration of the inpainting algorithm with thevirtualized-reality indoor modeler. Embedding of the texture andstructure preservable inpainting method with the virtualized-reality
indoor modeler makes the whole system interactive and intuitive.
----- Break ----10:40 - 12:10

Mid-sized Hall B

DES3: Human Perceptions in Augmented Reality
T. Kuroda, Kyoto Univ. Hospital, JapanK. Makita, AIST, Japan

DES3 - 1:
10:40

Invited How AR Reforms Social Medical System?

AR & VR

Chair:
Co-Chair:T. Kuroda, Y. Kuroda*, K. Hori**, N. Ohboshi***
Kyoto Univ. Hospital, Japan*Osaka Univ., Japan**Gunma Pref. College of Health Sci., Japan***Kinki Univ., JapanNo clinical procedure is performed without computational support inmodern hospitals. The Augmented Reality (AR) is expected as thesilver bullet for the problems happens among computerized clinics. This
lecture surveys on-going medical AR trials and forecasts how ARchanges our social medical system in the near future.
DES3 - 2:
11:05

Invited Augmenting Human Experience with
Perception-Based Displays Utilizing Illusions
T. Narumi
Univ. of Tokyo, Japan

In cross-modal interactions, our perception through one sense ischanged by stimuli simultaneously received through other senses. Byutilizing this, we can provide people to multi-modal experience withlimited sensory feedbacks. In this paper, I introduce examples ofperception-based displays augment our experience by using crossmodal interactions and augmented reality.

37

Thursday
DES3 - 3:
11:30

December 5
Invited Blue Light Matters: The Eye Is a Camera anda Clock!
K. Tsubota
Keio Univ., Japan

Energy-efﬁcient blue LED lights and visual display terminals proliferate
nowadays. Two concerns of blue light are potential retinal damage
leading to age-related macular degeneration and circadian rhythm
disruption from exposure at night. Appropriate intervention for eye
protection is necessary for the long-term healthy incorporation of blue
light into modern society.
DES3 - 4L
11:55

Effectiveness of Freehand Modeling by BlueGrotto
for CSCW in VR Space
T. Oyoshi, Y. Miwa, N. Shichijo, S. Saga
Muroran Inst. of Tech., Japan

This paper discusses the effectiveness of the implementation of thefreehand modeling interface of BlueGrotto in CSCW systems using
immersive VR environments. A demonstration shows that the interface
naturally reinforces the mutual communications among the users
without making them take the trouble to use additional communications
tools.
11:55 - 12:25

Mid-sized Hall B

Short Presentation DESp: Display Electronics and systems
All authors of poster papers for the DESp session will give a brief,
3-minute oral presentation with no discussion time in advance.
----- Lunch ----13:30 - 14:45

Mid-sized Hall B

DES4/VHF1: Sensing Technologies for Virtual/Augmented Reality
Chair:
Co-Chair:M. Kanbara, Nara Inst. of S&T, Japan
J. Bergquist, Nokia, Japan

DES4/
VHF1 - 1:
13:30

Invited Position and Direction Estimation System ofUser’s Viewpoint for Wide Indoor Environment
M. Kanbara
Nara Inst. of S&T, Japan

This paper introduces real-time viewpoint estimation system withinvisible markers for wide indoor area. The system can estimate theposition and direction of user's viewpoint precisely by afﬁxing
wallpapers containing printed invisible markers on ceilings. This system
can be applied to augmented reality, view depended display or humanrobot interaction.

38

Thursday
DES4/
VHF1 - 2
13:55

December 5Useful Field of View in Augmented Reality:
Comparison Between Distribution of Attention
under Binocular and Monocular Observation
A. Kitamura, H. Naito, T. Kimura*, K. Shinohara,
T. Sasaki**, H. Okumura**
Osaka Univ., Japan*Kansai Univ. of Welfare Scis., Japan**Toshiba, Japan

We conducted two experiments to compare binocular and monocularobservations when an Augmented Reality image was presented during
a useful ﬁeld of view (UFOV) task. We found the detection of aluminance change in the peripheral ﬁeld of view was more difﬁcult
under binocular AR observation than under monocular observation.
DES4/
VHF1 - 3:
14:15

Invited e-Heritage, Cyber Archaeology, and Cloud
MuseumT. Oishi, K. Ikeuchi

This paper summarizes our research project, e-Heritage, to digitize
cultural heritage assets over the world. We also propose cyberarchaeology that provides new ﬁndings based on the digital analysis on
those data. e-Heritage data is uploaded to cloud as well asarcheological ﬁndings for a comprehensive visualization system.
14:50 - 17:50

Main Hall C

Poster DESp: Display Electronics and Systems
DESp - 4

Eyeglass-Based Hands-Free Videophone Using
Fish-Eye Cameras and HMD
S. Kimura, T. Horikoshi
NTT DoCoMo, Japan

We propose an eyeglass-based videophone. The developed glasses
have ﬁsh-eye cameras to capture the wearerʼs face and background,and the images are fused to generate a self-portrait image. The system
also has a HMD displaying the intended party and enables a video callwithout holding camera and display devices.
Author Interviews and Demonstrations
18:30 – 19:10

39

AR & VR

Univ. of Tokyo, Japan

Wednesday

December 4

Special Topics of Interest on
Lighting Technologies
Wednesday, December 4
13:40 - 16:40

Main Hall C

Poster OLEDp1: OLED Technologies
OLEDp1 - 14 OLED Deposition System Using Plane-Source
Evaporation Techniques
S.-H. Lai, C.-C. Chen, C.-C. Wang, F.-C. Tung,
S.-H. Chen, Y.-S. Wang
ITRI, Taiwan
The equipment with plane-type evaporation source for thin ﬁlm
evaporation is proposed. The parallel direct simulation Monte Carlo(DSMC) method is also developed for obtaining large-area uniformity
for various organic materials on substrate. The system maintains ﬁlm
thickness non-uniformity of less than 5% and provides high material
utilization of over 70%.
OLEDp1 - 15 High Color Rendition White Organic Light-Emitting
Diodes with Excimer and Fluorescent Emitter for
Lighting Application
Y. Jiang, Z. Xie*, W.-Y. Wong*, H.-S. Kwok
Hong Kong Univ. of S&T, Hong Kong
*Hong Kong Baptist Univ., Hong Kong
A novel Pt based triplet emitter with broadband yellow-red emission ,was employed in the fabrication of WOLEDs. This broadband emission
was a result of the combined effect of monomer and excimer emissionof the Pt compound. By mixing with BCZVBi, a high CRI of 95.6
WOLED was demonstrated.
OLEDp1 - 16 Electroluminescence Improvement of Quantum
Dots Light Emitting Diodes through Organic Hole
Transport Layer Optimization
M. D. Ho, D. Kim, N. Kim, H. Chae
Sungkyunkwan Univ., Korea
In this research, we investigated improvement of electroluminescence(EL) performance of QD-LED through a composition of organic holetransport materials (polymer and small molecules). Furthermore, theeffects of thermal annealing of hole transport layer on the morphology
and EL performance of QD-LED were also demonstrated.

40

Thursday

December 5
Thursday, December 5

9:00 - 12:00

Main Hall C

Poster PHp: Phosphors
PHp - 15

Wavelength Conversion Material Phosphor-Glass
Composites for High Power Solid-State Lighting
N. Fujita, M. Iwao, S. Fujita, M. Ohji
Nippon Elec. Glass, Japan

Phosphor-glass composites, in which phosphors are dispersed, havebeen developed. The phosphor-glass composites are expected as theexcellent wavelength conversion material for high power solid-state
lighting, which have high-humidity resistance, long lifetime andextremely small deviation in emission color.
PHp - 16

Double-Layered CuInS2/ZnS Quantum Dot-Polymer
Plate-Based High-Color Rendering White LightEmitting DiodeJ.-H. Kim, W.-S. Song, J.-H. Lee, H.-D. Kang, H. Yang
Hongik Univ., Korea

PHp - 17

Silica-Embedded Quantum Dot-Based White LED
and Effect of Silica on Device Stability Behavior
W.-S. Song, J.-H. Kim, K.-H. Lee, H.-S. Lee, S.-H. Lee,
H. Yang
Hongik Univ., Korea

Blue-to-yellow light-convertible CuInS2/ZnS quantum dots (QDs) are
synthesized and then embedded into silica phase via a microemulsion.
Bare and silica-embedded QDs are combined, respectively, with a blue
LED for white QD-LED fabrication. These two white QD-LEDs are
identically subjected to the continuous operation and compared withrespect to device stability.
PHp - 18

Withdrawn

PHp - 19

A Study on Thermal Characteristics for High PowerLEDs
S. Park, Y. Kim, G. Kim
Samsung Display, Korea

High-power LED was developed with 17 ﬂip-chips performing 1,500
lumens. A mechanism of heat generation was analyzed and proposedfor designing multi-chip LEDs to overcome limitation of 250 degree
Celsius on a window in the LED for the application of backlight units.
41

LIT

A free-standing double-layered composite plate, consisting of highly
bright orange and greenish-yellow CuInS2 quantum dots (QDs)
embedded in polymeric matrix, is combined with a blue light-emitting
diode (LED). The QD plate-LED exhibits a high color rendering index of
81 and high luminous efﬁcacy of 71.2 lm/W at 20 mA.

Thursday
PHp - 25L

December 5
Improve the Stability of Quantum Dots with Silica
and Applying Quantum Dot Film as a New TypeWhite Light Packaging System
I. S. Sohn, W. B. Im
Chonnam Nat. Univ., Korea

For improve quantum dots (QDs) thermal stability, we synthesized
quantum dot embedded silica (QDES). Moreover applying QDES a
white LED (WLED) was fabricated using QDES in thin polymer ﬁlm.
Using remote type packaging system, by stacking yellow phosphor inglass plate and QDES ﬁlm we implemented WLED with high CRI.
16:50 - 18:15

Conference Hall

OLED5: OLED for Lighting Applications
Chair:
Co-Chair:Y. Kijima, Sony, JapanT. Ikuta, JNC Petrochem., Japan

OLED5 - 1: Invited Recent Progress of OLED Performance for
16:50
Lighting Application
K. Furukawa, K. Kato, T. Iwasaki
Konica Minolta, Japan
To compete with LED in general lighting ﬁelds, one of the importantand insufﬁcient requirements for OLED lighting is the luminous efﬁcacy.
Recent progress of OLED performance, especially in phosphorescentmaterials and light out-coupling technology, will be discussed. In
addition the alternative electrode technology to ITO will be touched on.
OLED5 - 2
17:15

Out-Coupling Enhancement of OLEDs withDiffractive Micro Lens Film
Y. Kurita, H. Koshitouge, K. Mizuhara, D. Okuno,
T. Tokimitsu
Mitsubishi Rayon, JapanA diffractive micro lens alley (MLA) ﬁlm enhances emission fromorganic light-emitting diodes (OLEDs). The ﬁlm had MLA molded on
diffraction grating. The ﬁlm showed superior improvement of outcoupling efﬁciency, luminous intensity and chromatic stability. The
simulation results explained the advances of these ﬁlms.

42

Thu./Fri.

December 5/6

OLED5 - 3
17:35

Highly Transmissive One-Side-Emission OLED
Panel with Solid Encapsulation and Peripheral Grid
Electrode
D. Kato, K. Sugi, T. Ono, A. Amano, T. Sawabe,
T. Sugizaki, H. Kakizoe, Y. Mizuno, Y. Shinjo, S. Enomoto,I. Amemiya
Toshiba, JapanWe developed a transmissive one-side-emission OLED panel with solid
encapsulation and peripheral grid electrode to enhance thetransmittance of whole panel. The transmittance of solid encapsulation
was 1.2 times higher than that of cavity encapsulation. As a result, weachieved the high transmittance of ~65% for the whole panel.
Author Interviews and Demonstrations
18:30 – 19:10

Friday, December 6
9:00 - 9:55

Main Hall A

PH3: Phosphors for Lighting
Y. Li, Appotronics, China
K. Hara, Shizuoka Univ., Japan

PH3 - 1:
9:00

Invited New Blue Light Excitable Red-Emitting
Phosphate Phosphor

LIT

Chair:
Co-Chair:

K. Toda, S.-W. Kim, T. Ishigaki, T. Hasegawa,
K. Uematsu, M. Sato
Niigata Univ., Japan
A novel red-emitting olivine-structure type phosphor NaMgPO4:Eu2+
was synthesized for the ﬁrst time by the melt synthesis technique. The
NaMgPO4:Eu2+ phosphor shows red emission band centered at 628 nm
under blue light excitation. The internal quantum efﬁciency of thisphosphor at the excitation wavelength of 450 nm was 81%.
PH3 - 2
9:25

Synthesis and Luminescence Characterizations of
New Thiosilicates Phosphors for LED Lighting
S.-P. Lee, T.-M. Chen, C.-H. Huang*, T. S. Chan**Nat. Chiao Tung Univ., Taiwan*ITRI, Taiwan**Nat. Synchrotron Radiation Res. Ctr., Taiwan

Unprecedented M(La1-xCex)2 Si2S8 (M = Ca, Sr, Ba) phosphors were
investigated and evaluated for potential application in white-light LEDs.
The Ce3+-activated thiosilicates can be excited by near-UV to blue lightand show green broadband emissions. Recent progress on theirluminescence and applications are discussed.

43

Friday
PH3 - 3
9:40

December 6
Comparison of ACELs Formed on Copper, Silver
and Gold Back Electrodes
J. Silver, G. Fern, P. G. Harris, P. Reip*, A. Kong*,
P. Bishop**, A. Berzins**, S. Jones***
Brunel Univ., UK*Intrinsiq Materials, UK**Johnson-Matthey, UK***Printed Elect., UK

AC electroluminescent display panels were prepared by ﬁrst ink-jet
printing electrode structures (either copper, silver or gold) onto
substrates, then screen printing ﬁrst a single binder layer (containing
both the ACEL phosphor powder and the barium titanate ferroelectric
particles) before ﬁnally overprinting with a transparent conducting
electrode.
9:00 - 12:00

Main Hall C

Poster FMCp: FPD Manufacturing, Materials & Components
FMCp - 18

Designing of Side Emitting Lens for Slim Direct LED
Back Light Unit
S. Park, J. Seo, G. Kim
Samsung Display, Korea

The light extraction efﬁciency of side emitting lens was simulated. The
amount of light reaching the bottom and side detectors of LUXEON
was 52.62%. We developed a new design lens with an extraction
efﬁciency of 81.13%, thereby improving the performance by 154%
compared to that of LUXEON.
FMCp - 19

Fiber Optic Illuminator Using Recycling Light
Technology for Signage Applications
K. Li
Wavien, USA

A single color and a multi-color ﬁber optic illumination system using
single white LED and RGBW LEDs respectively, powered by Wavienʼs
Recycling Light Technology (RLT) systems will be described. The multicolor system will open up many applications where this capability is notavailable using neon tubes or linear LED arrays.
FMCp - 20

Efficient LED Hard Edge Spot Light Using Recycling
Light Technology
K. Li
Wavien, USA

A hard-edge LED spot light for PAR and MR lamps using Wavien RLTtechnology are described. These TruSpot LED spot light also accept
GOBO image slides so that it can be used to project advertising
images. The RLT technology allows up to 280% improvement inbrightness over standard optical conﬁgurations.
44Friday
FMCp - 21

December 6
The Design of High Efficiency Light-Guide
Plate with Multi Step Wedge Structure
Y. W. Chang
AU Optronics, Taiwan

We successfully release a multi steps wedge design which is better
than AUO published in 2012. According to our research, we divide thewedge structure into two parts due to different functions. We do
improve the wedge structure to be processed more easily, better
performance and more stable.
FMCp - 22

Surface Diffusing System LCDs with Small Viewing
Angle Dependence of Contrast Ratio and Color Shift
N. Munemura, D. Sekine, A. Tagaya, Y. Koike
Keio Univ., Japan

We fabricated the scattering ﬁlm to realize wide luminance angular
distribution liquid crystal display with surface diffusing system based on
the novel multiple light scattering simulation. With this scattering ﬁlm,
we demonstrated the surface diffusing system liquid crystal display withsmall viewing angle dependence of contrast ratio and color shift.
FMCp - 23

Thin Seamless LED Flat Lighting Panel Using Highly
Scattered Optical Transmission Polymer

LIT

K. Mochizuki, K. Sakurai, T. Iwamoto, K. Oosumi,
Y. Shinohara, A. Tagaya*, Y. Koike*
Nittoh Kogaku, Japan*Keio Univ., Japan
We have developed a thin seamless LED ﬂat lighting panel (Seamless
Panel) using a highly scattered optical transmission polymer. The
Seamless Panels can be connected without showing seams on thelighting surface. The Seamless Panel gives more ﬂexibility to design
various illumination systems.
13:30 - 15:05

Main Hall A

FMC8: Lighting Technologies
Chair:
Co-Chair:

K. Käläntär, Global Optical Solutions, JapanY. Yang, Japan Display, Japan

FMC8 - 1
13:30

Quantum Dot Enhancement of Color for LCD
SystemsJ. V. Derlofske, G. Benoit, A. Lathrop, D. Lamb
3M, USA

Quantum dot technology promises to signiﬁcantly extend the color
gamut of liquid crystal displays (LCDs). Used in a ﬁlm format, quantum
dots can produce large color gamuts (>96% NTSC) with high efﬁciency.
This paper discusses how quantum dots are incorporated into an LCD
system and the factors that dictate performance.

45

Friday
FMC8 - 2
13:50

December 6
New LED Design Concept for High Color Gamut
Application
S. J. Chang
AU Optronics, Taiwan

This new type LED is including two-types LED and controlling current
ratio by the feedback of signal in LCD. During to dynamic control LED
current ratio, pictures on display can be more brightness or colorful. It
can solve unbalance of brightness and color by using signal lightsource.
FMC8 - 3
14:10

Switchable Dual Directional Backlight for Energy
Saving in Automotive Displays
A. Yuuki, K. Itoga, T. Satake
Mitsubishi Elec., Japan

We have developed a switchable dual directional backlight for LCDs in
the center console of automobiles. The backlight can change theluminance ratio between the driver's direction and the co-driver's
direction, without degrading the luminance and its uniformity. It cansave 30% of the lighting energy in solo drive.
FMC8 - 4
14:30

Optical Characteristics of Directional Backlight Unit
for Field-Alternative Full Resolution AutoStereoscopic 3D LCD
K. Käläntär
Global Optical Solutions, Japan

In this paper the design and the structure of the directional BLUs usedin recent ﬁeld alternative 3D auto-stereoscopic full resolution medium
size LCDs are explained and the constraints of the design for LGP andlight deﬂecting ﬁlm have been clariﬁed for a BLU diagonal size of
180.34 mm.
FMC8 - 5L
14:50

Optical Design of Novel Microstructure Film for
Wide Viewing TN-LCD
S. Katsuta, H. Yui, Y. Asaoka, E. Yamamoto, T. Maeda,
T. Kamada, Y. Tsuda
Sharp, Japan

A novel wide viewing ﬁlm, which contains air micro-cavities in thepolymer layer, has been developed. By designing the three dimensional
shape of the cavities to optimize the ﬁlm for TN-LCD, the grayscale
inversion of TN-LCD is improved and the contrast ratio is over 10:1 inall directions.
Author Interviews and Demonstrations
16:40 – 17:20

46

Wednesday

December 4Workshop on
LC Science and Technologies
Wednesday, December 4
14:00 - 15:00

Mid-sized Hall A

LCT1: Keynote & Special Session (1)Chair:
Co-Chair:

H. Okada, Univ. of Toyama, Japan
M. Ozaki, Osaka Univ., Japan

LCT1 - 1:
14:00

Invited TFT-LCD Manufacturing Technology; Current
Status and Future Prospects
Y. Ukai
Ukai Display Device Inst., Japan

Current status and future prospects in the thin-ﬁlm-transistor liquid
crystal display (TFT-LCD) manufacturing technology are reviewed.
Amorphous Si (a-Si), low temperature poly-Si (LTPS) and metal oxide
TFT-LCDs are discussed in this paper. Future trends in TFT-LCD
manufacturing technologies are described in terms of green
manufacturing and in-cell integration technologies.
LCT1 - 2:
14:35

Invited IGZO Technology for the Innovative LCD
Y. Kataoka, H. Imai, Y. Nakata, T. Daitoh, T. Matsuo,
N. Kimura, T. Nakano, Y. Mizuno, T. Oketani,
S. Yamazaki*, J. Koyama*, M. Takahashi*, M. Tsubuku*,
H. Miyake*, T. Ishitani*, Y. Hirataka*,J. Koezuka**,
K. Okazaki**

LCT

Sharp, Japan*Semiconductor Energy Lab., Japan**Advanced Film Device, JapanWe developed the IGZO technology for the innovative LCD panels.
IGZO-TFT can realize lower power consumption and higher touch
panel performance than a-Si TFT. IGZO technology has beensuccessfully applied to our Gen 8 factory. We developed highperformance LCDs with IGZO technology from mobile devices to large
sized monitors.
----- Break -----

47

Wednesday

December 4

15:40 - 16:55

Mid-sized Hall A

LCT2: Special Session (2)Chair:
Co-Chair:Y. Ukai, Ukai Display Device Inst., Japan
T. Ishinabe, Tohoku Univ., Japan

LCT2 - 1:
15:40

Invited Recent LC Material’s Development and Its
Challenge toward Future
K. Tarumi
Merck KGaA, Germany

Liquid Crystal Display (LCD) development is a big success story thatbegun by note PC application in 1990s and has been followed bymonitor and TV application. This development story is reviewed by LC
materials development of TN, IPS/FFS, VA and PS-VA.
LCT2 - 2:
16:05

Invited Past, Present, and Future of FFS-LCD
S. H. Lee, I. W. Jang, D. H. Kim
Chonbuk Nat. Univ., Korea

Fringe-ﬁeld switching (FFS) mode becomes a symbol of highperformance LCD technology. The talk discusses how the technology
was developed and how it was evolved to present and what will be
future of the FFS mode in terms of performance and technologies.
LCT2 - 3L: Invited High Performance IPS Technology Suitable
16:30
for High Resolution LCDs
K. Ono, H. Matsukawa
Panasonic Liquid Crystal Display, Japan
Transmittance of an IPS panel has been drastically evolved byintroducing a new pixel structure having a shielding transparent
common electrode. Furthermore, picture quality has been improved bydeveloping a low scattering LC material and photo alignment
technology.
Author Interviews and Demonstrations
17:20 – 18:00

Evening Get-Together
with Wine
Tuesday, December 3, 2013
18:00 – 20:00
at Restaurant Sora (1F),
Sapporo Convention Center(Sponsored by Merck Ltd., Japan)
See page 12 for details
48

Thursday

December 5
Thursday, December 5

9:00 - 10:25

Mid-sized Hall A

LCT3: Display Mode (1)Chair:
Co-Chair:M. Funahashi, Kagawa Univ., JapanS. H. Lee, Chonbuk Nat. Univ., Korea

LCT3 - 1:
9:00

Invited Evolution of Super Fast Response VA-LCD
M. Murata, Y. Iwata, K. Tanaka, H. Yoshida, K. Miyachi
Sharp, Japan

We have developed a “novel super fast response (SFR) mode withultra-wide temperature range.” SFR shows super fast response by
forcibly controlling the alignment of LC molecules. We will explain thereason why the response of the SFR mode is much faster than theconventional mode.
LCT3 - 2
9:25

Bidirectional Field Switching Mode for Fast Nematic
LC Modulators
A. R. Geivandov, M. I. Barnik, V. S. Palto, S. P. Palto
Inst. of Crystallography RAS, Russia

We have developed a new driving scheme and bidirectional ﬁeld
switching (BFS) LC mode for fast nematic LC switching. The advantageof the BFS mode is submillisecond response time achieved both for LC
switching-on and switching-off processes. That was achieved by
excluding the ﬁeld-off viscous-elastic relaxation stage of LC molecules.
LCT3 - 3
9:45

Reflective Field Sequential Color Displays Based on
Electrically Suppressed Helix FLC

LCT

Y. Ma, A. Srivastava, V. G. Chigrinov, H. S. Kwok
Hong Kong Univ. of S&T, Hong Kong
A reﬂective ﬁeld sequential color display with electrically suppressed
helix ferroelectric liquid crystal is proposed. The ultra fast responsetime enables this display cell to drive at very fast frequency with low
electric ﬁeld. This reﬂective display cell can be used in projection
displays and micro displays.
LCT3 - 4
10:05

Viewing Angle Switchable LCD Based on
3-Electrode FFS Mode
C.-H. Yang, C.-F. Fan, C.-W. Yeh, C.-H. Liao, W.-H. Hsu
AU Optronics, Taiwan

A viewing angle control technology based on a 3-electrode FFS mode
design is proposed. In narrow viewing mode, it provides a privacy
protection function with the special driving scheme. To further enhance
the privacy protection performance, the unbalanced domain designconcept is proposed and veriﬁed by simulation.
----- Break ----49

Thursday

December 5

10:40 - 12:00

Mid-sized Hall A

LCT4: LC Materials
Chair:
Co-Chair:K. Tarumi, Merck KGaA, Germany
S. Komura, Japan Display, Japan

LCT4 - 1
10:40

Temperature-Independent Hole Mobility in an
Ordered Smectic Phase of Phenylterthiophene
Derivative and a Columnar Phase of Perylene
Tetracarboxylic Bisimide Derivatives
M. Funahashi, Y. Funatsu, T. Ishii, A. Sonoda*
Kagawa Univ., Japan*AIST, Japan

In this study, the hole transport characteristic in the ordered smectic
phase of a 2-phenylterthiophene derivative is compared to the electrontransport property in an ordered columnar phase of perylene
tetracarboxylic bisimide derivative bearing disiloxane chains. The
carrier transport mechanisms are different between the smectic andcolumnar phases.
LCT4 - 2
11:00

A New Patterning Technology with Polymerizable
LCs
R. Goto, W. Hoshino, N. Iwahashi, K. Takahashi,
S. Morishima, N. Yanagihara, T. Yamaguchi, K. Takada,Y. Ito, K. Oki
FUJIFILM, Japan

We have developed a new ﬁlm patterned retarder of vertically aligned
polymerizable discotic materials (VPDM) for passive 3D-LCDs. The
direction of VPDM slow-axis can be switched from perpendicular toparallel to the rubbing direction by a single non-polarized UV exposure
onto alignment layer containing a photo-reactive additive.
LCT4 - 3
11:20

Comparison of Surface Characteristics on Rubbed
Polyimide by Rubbing Condition with NEXAFS
M. Kwak, K. Kim, B. Kim, S. Choi, N. Kim, D. Kang,
Y. Choi, S. Jeon, J. Jeon, K. Kim*, B. Kim*
LG Display, Korea*Pohang Accelerator Lab., Korea

We studied the surface characteristics of polyimide (PI) under various
rubbing condition using near-edge X-ray absorption ﬁne structure(NEXAFS) and difference speedy measurement by polarization
conversion (difference-SMP) methods. As increasing the contact
impression, the molecular tilt angle α and anisotropy decreased
linearly. The stage speed dependency was not apparent.

50Thursday
LCT4 - 4
11:40

December 5
Study of Polymer Bump Morphology in PS-VA LCD
X. Ma, X. Zhong, H. J. Huang, K.-C. Lee
Shenzhen China Star Optoelect. Tech., China

Several factors which inﬂuence bump morphologies in PS-VA LCD
were studied. Results show that bump morphologies are strongly
dependent on RM type, cell gap and UV condition. LC host can also
inﬂuence the bump morphologies, which means all these factors
should be taken care carefully to get good optical performance.
----- Lunch ----Author Interviews and Demonstrations
18:30 – 19:10
14:50 - 17:50

Main Hall C

Poster LCTp1: LC Alignment
LCTp1 - 1

Alignment and Alignment Transition of BC Nematics
O. Elamain, G. Hegde*, L. Komitov
Univ. of Gothenburg, Sweden*Univ. Malaysia Pahang, Malaysia

Polyimide material for vertical alignment was found to promote only
planar alignment of a bent core nematic and of its mixtures withcalamitic (with rod like molecules) nematic. Temperature driven
transition from planar to vertical alignment was found in the mixtures athigher concentrations of the calamitic nematic than 20wt%.
LCTp1 - 2

LCT

LC Alignment on Zinc Oxide Nanostructure
Surfaces
M.-Z. Chen, W.-S. Chen, S.-H. Yang, Y.-F. Chung,
S.-C. Jeng
Nat. Chiao Tung Univ., Taiwan

ZnO is an inorganic material and it can provide more reliable alignment
than conventional polyimide alignment layers especially used in LC
projection displays. In this work, nanostructure surfaces of the ZnO
nanowire arrays on the ITO glass substrate were fabricated and thevertically-aligned property was observed.

RECEPTION
Wednesday, December 4, 2013
18:30 – 20:30
Conference Hall (1F)
Sapporo Convention Center
See page 12 for details

51

Thursday
LCTp1 - 3

December 5
Alignment and Electro-Optical Properties of
Nematic LCs by Using Dendrimers
Y. Takahashi, T. Sakuma, O. Haba, T. Koda, K. Yonetake,M. Kwak*, N. Kim*, S. Choi*, D. Kang*, Y. Choi*, S. Jeon*,Y. Momoi**
Yamagata Univ., Japan*LG Display, Korea**LG Display, Japan

Using liquid crystalline (LC) dendimer, a vertical alignment mode drive
operated without using polyimide alignment layer. Various LC cells
using different LC dendrimers and substrates were prepared to explore
effects of the dendrimers and substrates on the cell properties. Electrooptical behavior was conﬁrmed for the cells with polymer substrates.
LCTp1 - 4

The Establishment of UV Curing Polymerization
Model for Polymer-Stabilized Vertical Alignment
LCDs
Y. Song, F. Zhao, C.-C. Hsieh, C.-Y. Chiu
Shenzhen China Star Optoelect. Tech., China

We established a semi quantitative polymerization model for PS-VA
analysis. The UV irritating conditions such as wavelength and exposure
time are combined to a variable quantity named as effective UV
dosage. It reveals the mechanism of polymerization process anddirectly link to response time of LC.
LCTp1 - 5

Withdrawn

LCTp1 - 6Monte Carlo Simulation for Molecular Orientation in
Mixture of LC and Dendrimers Using Hard Repulsive
Model Molecules
M. Uchida, T. Koda, A. Nishioka, O. Haba, K. Yonetake,M. Kwak*, Y. Momoi*, S. An*, D. Kang*, Y. Choi*, S. Jeon*
Yamagata Univ., Japan*LG Display, Korea

Recent experiments disclosed that dendrimers in liquid crystal (LC)induce homeotropic alignment. In this study we tried to elucidate
mechanism of alignment of dendrimer/LC mixture by Monte Carlosimulation of hard repulsive model molecules. We discuss alignment
structure depending on density of dendrimers.
LCTp1 - 7

Cylindrical LC Lens by Photoalignment with
Spatially Variable Pretilt Angle
F. Fan, A. K. Srivastava, T. Du, M. C. Tseng,
V. G. Chigrinov, H.-S. Kwok
Hong Kong Univ. of S&T, Hong Kong

In present article, cylindrical LC lens is made with photoalignment
material with controllable pretilt angle. The pretilt angles of thephotoalignment material can be controlled continuously from planar tovertical alignment with increasing of UV exposure. The LC lens is madewith spatially variable exposure energy on the alignment layer.
52

Thursday

December 5

LCTp1 - 8

Withdrawn

LCTp1 - 9

Enhancement of an Azimuthal Anchoring Energy ina Photo-Alignment Layer by Stacking Planar
Alignment Layer
Y. Kim, D.-H. Kim, Y.-J. Lee, C.-J. Yu, J.-H. Kim
Hanyang Univ., Korea

We propose a method to enhance an azimuthal anchoring energy bystacking photo-alignment layer onto a planar alignment layer. The
exposure of LPUV to the stacked alignment layers gave rise to thestrong azimuthal anchoring energy. As a result, we achieved the fast
response time characteristics in the FFS mode.
LCTp1 - 10

Photo-Addressable Bistable LCD
T.-H. Lin, C.-T. Wang, H.-C. Jau
Nat. Sun Yat-Sen Univ., Taiwan

A photo-addressable bistable reﬂective display which is based on an
azo dye-doped liquid crystal has been proposed and demonstrated.
Bistable bright and dark states can be achieved by switching between
the 45 twisted nematic and photo-induced isotropic states via
photoisomerization effect.
LCTp1 - 11

Study of Electro-Optical Properties of LC/Reactive
Mesogen Coated LCD Fabricated by Slit Coater
Y. Nagataki, T. N. Oo, K. Miyashita*, H. Hirata*,
M. Kimura, T. Akahane
Nagaoka Univ. of Tech., Japan*Toray Eng., Japan

LCTp1 - 12L Electro-Optical Properties of Unconventional
Subphases Between Ferroelectric andAntiferroelectric LC
K. Isobe, K. Ishikawa
Tokyo Inst. of Tech., Japan
Electro-optical properties of unconventional subphases emerging
between ferroelectric SmC* and antiferroelectric SmCA* are studied.
These subphases change their structures continuously depending on
temperature and are expected to show anomalous electro-opticalresponses. The details of their response with their structures are
discussed.

53

LCT

We recently proposed a slit coater method for printable liquid crystal(LC) devices. In this study, we will present the effect of the ultraviolet(UV) exposure dosage on the electro-optical (EO) properties, the pretilt
angle, and the azimuthal anchoring energy of LC sample cells
fabricated by the slit coater method.

Thursday

December 5

LCTp1 - 13L Observation of Dynamic Behavior of Liquid Crystal
Molecules at the Alignment Surface
Y. Nishikawa, M. Sugimoto, S. Ishihara
Osaka Inst. of Tech., Japan
We observed the very fast response (both the rise and decay time
were about 200 µs) using homeotropic cell applying the voltage along
the LC molecular long axis under the oblique incident light.
We conﬁrmed the cause of this phenomenon was due to the LC
molecules at the alignment surface.
14:50 - 17:50

Main Hall C

Poster LCTp2: Evaluation
LCTp2 - 1

Image Sticking Characteristic of Additive Blended
LCD
S.-K. Roh, J.-H. Kim, Y.-H. Choi, W.-Y. Choi, J.-H. Baek,
M. JunLG Display, Korea

We have found out that the LC material is one of the main factors
related to image sticking. We applied an additive blended with the LC tolower the level of image sticking. The additive blended LC showed
outstanding performance in the image sticking test under stableelectro-optic conditions.
LCTp2 - 2

Azimuthal Anchoring Energy of NLC on the
Alignment Film Formed by Time Division ElectroSpray Deposition Method
Y. Kudoh, Y. Uchida, T. Takahashi
Kogakuin Univ., JapanThe ESD method is one of the ﬁlm forming methods. The pre-tilt angle
was controlled by using the improved ESD method has been proposedby our previous report. In this report, the azimuthal surface anchoringenergy for the nematic LC on the ﬁlm formed by that method wasmeasured.
LCTp2 - 3

Improving Color Mix of High PPI LCD
Y. Feng, J. Lim, J. Zhang, N. Jiang, B. Shi
BOE Optoelect. Tech., China

Color mix is a serious problem in high ppi (pixel per inch) TFT-LCD
product (include a-Si and LTPS). In this paper, we optimize structure
and material characteristic by calculation and simulation to improve
quality of LCD. Then color mix is better.

54

Thursday

December 5

LCTp2 - 4

The Flexoelectric Effect Influence of Image Sticking
in FFS Mode LCD
K.-T. Huang, Y.-W. Hung, R.-X. Fang, Y.-T. Chao, T. Lee,
C. Lee, S.-C. Lin, C.-H. Yu
HannStar Display, Taiwan

Image Sticking is one of critical issue in TFT-LCD. In this paper, we
discuss the inﬂuence of image sticking due to ﬂexoelectric effect of LC
in Fringe-Field Switch (FFS) mode LCD. Image sticking level will be
serious if the ﬂexoelectric effect is not be concerned in usual LCD
module driving method.
LCTp2 - 5

Optical Evaluation of Two Type Omniwide Film
Y. K. Li, D. L. Fu, X. Huang
Infovision Optoelect., China

We have evaluated two types Omniwide ﬁlm on a TN LCD module.
Both of the two types O-ﬁlm can improve Gray-Scale-Inversion degreefrom 14 to 85 , and of course the O-ﬁlm will have an effect on otheroptical properties, such as transmittance, contrast radio, view angle,
NTSC, chromaticity etc.
LCTp2 - 6

Methods to Improve Contrast Ratio of LCD Under
Low Temperature
F. Lin, X. Huang, Y.-J. Tang, S. Li, J.-D. Liao
Infovision Optoelect., China

LCTp2 - 7

The Reason of COG Mura in TFT-LCD to Explore
J. Long, Y. Song, H. Zhu, H. Yu, X. Dong, S. Sun,
J. Wang, N. Quan, R. Li, H. Zhang, G. Yang, X. An
BOE Optoelect. Tech., China

COG Mura take place at the edge of glass where IC bonded on. The
main cause is that glass warp when IC bonded on panel which makelight from BLU transmit out. Panel deformation make cell gap and twist
angle change little which is not the main reason.
LCTp2 - 8L

DC Effect to VT Data of the ADS Mode
X. Xi, X. Zhou, C. Xie, J. You
BOE Tech. Group, China

To improve the image sticking of the ADS (Advanced Dimensional
Switch) mode, we studied the DC bias effect to V-T (VoltageTransmittance) and we found the optimal method to balance of positive
and negative voltage in pixel.

55

LCT

We fabricated a 3.47-in. cell and applied several methods to improvethe contrast ratio at low temperature. CR attenuation ratio is 37.6% withfaster response LC monomer. If we increase Vgh or Vdata, CRattenuation will be 21.0%. Lessen the charging frequency from 60 Hz
to 50 Hz, CR decreases about 26.9%.

Thursday
LCTp2 - 9L

December 5
Analysis of Vertical Crosstalk Phenomenon in
Fringe Field Switching Liquid Crystal Display
J.-D. Yang, C.-A. Tseng, P.-C. Liao, W.-H. Hsu
AU Optronics, Taiwan

In this paper, we show that the vertical crosstalk of FFS has strong
azimuthal dependence in the oblique view. By DIMOS.2D simulation,
we ﬁnd that the phenomenon is due to the tilt deformation of LC
director. Moreover, we demonstrate that the negative dielectricanisotropy LCs can sufﬁciently suppress this issue.
14:50 - 17:50

Main Hall C

Poster LCTp3: Display Mode
LCTp3 - 1

Optical Compensation of Fringe Field Switching
Display with Negative Dielectric Anisotropy LCs
Y. Xu, W. Chen, Z. Su, L. Jiang, X. Zhu, P. Liao
Infovision Optoelect., China

A zero-retardation ﬁlm compensated the negative FFS mode is
proposed to widen viewing angle, lower light leakage at dark state andcolor difference. And the simulation and experimental results indicatedthat using the zero-retardation compensation ﬁlm can reach almost thesame perfect compensation effect with B plates.
LCTp3 - 2

An Analytical Model for 3-Electrode FFS Mode LCD
C. F. Fan, C. H. Yang, C. W. Yeh, C. H. Liao, W. H. Hsu
AU Optronics, Taiwan

We propose an analytical model for 3-electrode FFS mode in viewing
angle switchable LCD. In this paper, the compensated pixel-electrodevoltage from the proposed analytic model can effectively reduce theon-axis light leakage to improve the image quality.
LCTp3 - 3

Optimize Cell Parameters Design of IPS
B. Bai, S. N. Zhang, Z. H. Li, P. Liao
Infovision Optoelect., China

IPS display mode with its excellent image quality become a TFT-LCD
ideal display technology. Response time, contrast ratio and color shift
are very important factors to judge image quality. We analyzed thesefactors which inﬂuence image quality by simulated with Techwiz LCD
software. Get the optima values of cell parameters.

56

Thursday
LCTp3 - 4

December 5High Aperture VA-LCD with CGL Pixel Design
S.-H. Lo, B. Han, S.-S. Huang, M.-H. Shih, C.-H. Chen
Shenzhen China Star Optoelect. Tech., China

We purpose a VA LCD with CGL (Central Gate Line) pixel. The celltransmittance is improved. In result, triple gate CGL pixel with gate
double side driving by gate driver circuit on array is more economic,
and the aperture become more efﬁcient and realize BM less structure.
LCTp3 - 5

A Novel Transparent Color LCD Using Azobenzene
Dye Layer
J.-H. Cho, W. S. Kang, B.-J. Mun, J. H. Lee*, B. K. Kim*,
H. C. Choi*, G.-D. Lee
Dong-A Univ., Korea*LG Display, Korea

We proposed a guest-host type transparent liquid crystal (LC) display
using a dichroic dye color ﬁlter (DDCF) with single layer. This device
with dark, color and transparent mode can show good optical
performance. As measured results, we conﬁrmed the excellent light
efﬁciency and high contrast ratio (~357:1) in transparent mode.
LCTp3 - 6

Advanced Full Color Cholesteric LCD in a SingleLayered Configuration by Pixel Isolation
K. S. Shim, S. I. Jo, J. H. Han, J.-H. Kim, C.-J. Yu
Hanyang Univ., Korea

LCTp3 - 7

Electro-Optical Characteristics of Metastable TNLCDs with Different Pretilt Angles
M. Akimoto, M. Sannomiya, K. Takatoh, S. Kobayashi
Tokyo Univ. of Sci. Yamaguchi, Japan

We study pretilt angle dependence of electro-optical characteristics ofvarious metastable TN-LCDs, mainly focusing on the RTN-LCDs. We
found that there are both upper and lower bounds on pretilt angle for
operative RTN-LCDs. When giving more lowered pretilt angles, we
obtain a metastable STN-LCD which shows unconventional electrooptical characteristics.

57

LCT

We demonstrate a full color cholesteric liquid crystal display (ChLCD)
with uniform color performance in a single-layered conﬁguration
through the pixel isolation. Each pixel was formed by the photopolymerization at different temperatures. From avoiding the inter-pixel
diffusion of monomers, we achieved the full color ChLCD with the welldeﬁned pixels.

Thursday
LCTp3 - 8L

December 5
Pixel Structure Optimized to Improve Black Line ofFringe Field Switching LCD
B. Shi, F. Yang, J. Lim, J. Zhang, Y. Feng
Chengdu BOE Optoelect. Tech., China

For Fringe Field Switching (FFS) LCD mode, Black line appears easily,especially at the pixelʼs short side, which leads to low transmittance. In
this paper, we optimize pixel structure in several ways. Last, black line
improve and the transmittance increase.
LCTp3 - 9L

Optical Compensation Using Uniaxial Films with
Normal Dispersion for a Wide-Viewing-Angle IPS
LCD
S.-W. Oh, B. W. Park, J.-H. Lee*, T.-H. Yoon
Pusan Nat. Univ., Korea*Chonbuk Nat. Univ., Korea

We propose an achromatic optical compensation method using uniaxial
ﬁlms to eliminate the off-axis light leakage at the dark state in an IPS
LCD. Three uniaxial ﬁlms with different dispersion characteristics areused so that they can compensate each other to achieve achromaticeffective phase retardation at off-axis.
LCTp3 - 10L Fast In-Plane Switching of Negative Liquid Crystals
by Crossed Patterned Electrodes
T.-H. Choi, J.-W. Kim, S.-T. Shin*, T.-H. Yoon
Pusan Nat. Univ., Korea*Samsung Display, Korea
We demonstrate fast in-plane switching of negative liquid crystals byusing crossed patterned electrodes. During the turn-off process, astrong in-plane electric ﬁeld is applied to the top substrates for a shortperiod of time, by which we obtained experimentally faster turn-off
switching than that of conventional IPS mode.
LCTp3 - 11L Optical Compensation of Flexible Plastic-Based
LCD for Wide Viewing Angle
T. Ishinabe, A. Sato, H. Fujikake
Tohoku Univ., Japan
Optical compensation of ﬂexible plastic-based LCD was achieved forwide viewing angle. We theoretically conﬁrmed that viewing angle
range of ﬂexible LCD can be improved by the optical compensationconsidering the optical anisotropy of plastic substrates and realized agood contrast ratio of 650:1 and wide viewing angle of 160˚C.

58Thursday

December 5

LCTp3 - 12L Surface-Stabilized Single-Domain Fringe-FieldSwitching Liquid Crystal Mode with Zero Pretilt
Alignment Property
S.-W. Oh, M.-K. Park, H. J. Lee, S.-H. Yoo, K. H. Park*,
J.-H. Lee*, B. K. Kim*, H.-R. Kim
Kyungpook Nat. Univ., Korea*LG Display, Korea
We investigated the origins of viewing angle issues in the singledomain fringe-ﬁeld-switching (FFS) liquid crystal (LC) mode. To solve
the asymmetric viewing properties, the polystyrene (PS) is used as LCalignment layer which has zero pretilt. The anchoring stability could be
effectively improved by the polymerized reactive mesogen layer (RM).
14:50 - 17:50

Main Hall C

Poster LCTp4: LC Applications
LCTp4 - 1

Planar Polymeric LC Lens for 2D/3D Image
Switching in Auto-Stereoscopic Display
B.-J. Mun, J.-H. Baek*, J. H. Lee**, B. K. Kim**,
H. C. Choi**, J.-H. Kim*, G.-D. Lee
Dong-A Univ., Korea*Hanyang Univ., Korea**LG Display, Korea

We propose a planar polymeric liquid crystal lens with a low cell-gap(~4.6 μm) for a 2D/3D switchable auto-stereoscopic display. This lensallows fast 2D/3D switching and low voltage due to a low cell gap. We
veriﬁed the electro-optical characteristics of the proposed LC lens byfabricating each layer.
Optically Rewritable LC Fresnel Zone Lens with Fast
Response
X. Wang, A. Srivastava, V. Chigrinov, H. S. Kwok
Hong Kong Univ. of S&T, Hong Kong
The fast switchable Fresnel zone lens with relatively high efﬁciency andeasy fabrication procedure was studied in this article. As comparedwith ordinary Fresnel zone plate (FZP), our proposed Fresnel zone lens(see FIG. 1) had double light intensity at the focal point, thus
possessed double efﬁciency of ordinary FZP.
LCTp4 - 3

The Application of LC Q-Plates for Modulating
Gaussian Beam
Y.-H. Huang, M.-S. Li, A. Y.-G. Fuh
Nat. Cheng Kung Univ., Taiwan

Liquid crystal (LC) device “q-plate” (QP) based on axially symmetricphoto-alignment was investigated in this work. The electro-tunable QP
device could be modulated to control the shape and polarization of thelinearly polarized Gaussian laser beam propagating through it. The
simulation results were consistent with the experimental ﬁndings.
59

LCT

LCTp4 - 2

Thursday

December 5

LCTp4 - 4

Electro-Optic Modulator Based on Nano/Micro-Sized
Polymer-Dispersed LC for TFT Array Inspections
J.-Y. Hwang, Y.-N. Hwang, K.-S. Park, J.-H. Kim, C.-J. Yu
Hanyang Univ., Korea

We report a highly sensitive electro-optic modulator with low driving
voltage based on the nano/micro-sized polymer-dispersed liquid crystal
for TFT array inspector. The light modulator with low dielectric and highbirefringence liquid crystals exhibited high defect detection sensitivity
and low driving voltage at 20 µm air gap.
LCTp4 - 5

Multi-Level Optical Switch of Diffractive Light from a
BCT Photonic Crystal Based on an Azo ComponentDoped HPDLC
M.-S. Li, A. Y.-G. Fuh, J.-H. Liu, S.-T. Wu
Nat. Cheng Kung Univ., Taiwan

Multi-level optical switches of diffractive light from a body-centered
tetragonal photonic crystal are demonstrated. The sample is fabricatedon azo-dye doped polymer-dispersed liquid crystals based two-beaminterference with multiple exposures. Bichromatic pumping beams areused to change the refractive index modulation and the intensity ofdiffractive light.
LCTp4 - 6

Optical Aberration Correction by Polymer Dispersed
LC Film
C.-T. Hsieh, C.-W. Chung, C.-H. Liao, P.-R. Ding,
W.-C. Su, C.-Y. Huang, C.-H. Lin*, K.-Y. Lo**, C.-J. Tien***Nat. Changhua Univ. of Education, Taiwan*Nat. Sun Yat-Sen Univ., Taiwan**Nat. Cheng Kung Univ., Taiwan***Cheng Shiu Univ., Taiwan

A distortion aberration (DA) correction device is fabricated with polymer
dispersed liquid crystal (PDLC) ﬁlm placed at the intermediate image
plane of the optical system. The DA correction by PDLC ﬁlm is
attributed to the redirection of the off-axis propagated chief ray towards
the principal point of the optical system.
LCTp4 - 7

Fabrication of 180-Fold Helix Spiral Phase Plate
Based on PDLC
S.-T. Wu, M. S. Li, Y. G. Fuh, Y. H. Huang, C. H. Yan
Nat. Cheng Kung Univ., Taiwan

High-fold-helix spiral phase plates (SPPs) based on polymer-dispersed
liquid crystals (PDLCs) are fabricated. The beam proﬁles of the helicalmodes emerging from the PDLC SPPs are measured using a laser
beam proﬁler. The beam radius of the principal maximum is linearly
proportional to the ℓ of the plate.
LCTp4 - 8

60

Withdrawn

Thursday
LCTp4 - 9

December 5
A Novel Imaging Method for Cholesteric LCD
M.-H. Yang, B.-W. Xiao, S.-W. Lai, Y.-S. Tsai, J.-L. Chen,
M.-H. Yeh, Y.-Z. Lee
ITRI, Taiwan

A novel imaging method with a new ChLCD panel structure without
patterning electrode is demonstrated. A photo mask instead ofelectrode pattern was used for creating a more conductive pattern todrive an image on the ChLCD. This discovery creates opportunities for
signage and X-ray imaging applications, etc.
LCTp4 - 10

An Issue of RA Bright Spot in TN-LCD
Y. J. Tang, X. Huang, S. Li, F. Lin
Infovision Optoelect., China

A 27-in. TN-LCD applied for monitor was developed. However, an issuenamed “RA bright spot” happened after reliability test. In this paper, thecharacteristics of the spot were analyzed. We found the spot
disappeared after changing the storage capacitor electrode connected
to common electrode signal instead of VDDA signal.
LCTp4 - 11

Method of Recycling LC from Waste LCD Panel
C.-W. Lu, H.-Y. Huang
ITRI, Taiwan

A method including the processes of extraction, blending andpuriﬁcation was developed to recycle the LC from waste LCD panel.
The feasibility was evaluated based on the product yield, display
performance and reliability test of the 100 pieces of LCD panels ﬁlledwith the reformulated LC mixture.

X. Wang, Q. Guo, F. Fan, J. Sun, A. Tam, Y. Ma,
A. K. Srivastava, V. G. Chigrinov, H. S. Kwok
Hong Kong Univ. of S&T, Hong Kong
We demonstrate a fast switchable Fresnel zone lens based on
ferroelectric liquid crystals and multiple planar alignment domains bymeans of photo-alignment. Two switchable modes, FOCUS/OFF and
FOCUS/DEFOCUS, of the FLCFZL have been constructed. The
proposed diffracting element provides fast response time, highdiffraction efﬁciency and simple fabrication.

61

LCT

LCTp4 - 12L Fast Switchable Ferroelectric Liquid Crystal Fresnel
Zone Lens

Thursday

December 5

LCTp4 - 13L All-Optically Controllable Scattering Mode Light
Modulator Based on Azobenzene Liquid Crystals
and Poly(N-Vinylcarbazole) Films
Y.-C. Liu*, K.-T. Cheng**, Y.-D. Chen*, A. Y.-G. Fuh*,****Nat. Cheng Kung Univ., Taiwan**Nat. Central Univ., Taiwan***Advanced Optoelect. Tech. Ctr., Taiwan

The study reports that isothermal phase transition and induced byphotoisomerization of azobenzene liquid crystals (azo-LCs) from transto cis-isomers results in the dissolution of poly(N-vinylcarbazole) (PVK)
into azo-LCs. All-optically controllable and highly efﬁcient scatteringmode light modulators based on PVK ﬁlms and itʼs re-form mechanism
were demonstrated.
LCTp4 - 14L Optical Switch Using Dye-Doped Chiral Nematic
Liquid Crystals
J.-W. Huh, B.-H. Yu, K.-H. Kim, T.-H. Yoon
Pusan Nat. Univ., Korea
We propose an optical switch using dye-doped chiral nematic liquid
crystals. The proposed device is switchable between the transparent
and black states. We expect that the proposed device can increase thevisibility of a transparent OLED display by positioning it at the rear sideof a transparent OLED display.
LCTp4 - 15L Dependence of Cell Thickness on Scattering
Property in Reverse Mode Liquid Crystal Cells withDifferent Morphologies
S. Sakurai, R. Yamaguchi
Akita Univ., Japan
Reverse mode liquid crystal cells using reactive mesogen have been
proposed. A cell thickness dependence on an electro optical property is
studied in the cell with different materials and UV exposure conditions.
The optical property in a scattering state is different from that of typicalnormal mode cell.
LCTp4 - 16L Switchable Liquid Crystal Window for Daylight
Control with Asymmetrical Incident Angle
T. Takasu, R. Yamaguchi
Akita Univ., Japan
We have proposed a reverse mode liquid crystal LC cell with hybridorientation for a daylight control window. The cell is transparent at any
incident angle in the off-state. The transmittance depends on theincident angle in the on-state and sunlight around noon can be strongly
scattered.

62

Thursday

December 5

LCTp4 - 17L Top-down Aligned Reactive Mesogen Layer for
Polarization-dependent Lenticular Lens in 2D/3D
Switchable Display
C. Lee, S.-H. Yoo, M. Kim, H.-R. Kim
Kyungpook Nat. Univ., Korea
We present a top-down aligned reactive mesogen (RM) layer forpolarization-dependent lenticular lens array in 2D/3D switchable
displays. Due to the geometric alignment effect of the nano-groove of
the imprinting mold, the RM layer can be well-aligned on the concaveshaped polymer layer.
LCTp4 - 18L Terahertz Liquid Crystal Grating Fabricated byUsing Microrubbing Process
R. Ito, M. Honma, T. Nozokido*, T. Nose
Akita Prefectural Univ., Japan*Univ. of Toyama, Japan
In this study, we fabricate a liquid crystal grating which can operate in
the terahertz frequency region by using microrubbing process.
Fundamental diffraction property was investigated by using optically
pumped gas laser system which can generate cw THz waves with anenough power for precise measurements.
14:50 - 17:50

Main Hall C

Poster LCTp5: Blue Phase
LCTp5 - 1

Effect of Surface Alignment on the Stability andElectro-Optical Properties of Blue Phase LC
Nagaoka Univ. of Tech., Japan*Kyushu Univ., Japan

Blue phase liquid crystal has attracted the researchersʼ interest in the
recent years for a new mode of liquid crystal display application. In thisstudy, we present an effect of surface alignment on the stability andelectro-optical properties of blue phase liquid crystal by using variousalignment ﬁlms.
LCTp5 - 2

Withdrawn

LCTp5 - 3

Withdrawn

63

LCT

I. Yamana, T. N. Oo, H. Kikuchi*, M. Kimura, T. Akahane

Thursday

December 5

LCTp5 - 4

Analysis of Polymer Stabilized Blue Phase Network
Structure for Understanding of LC Alignment
M. Kwak, K. Kim, S. An, Y. Yi, S. Choi, N. Kim, B. Kim,
D. Kang, Y. Choi, S. Jeon
LG Display, Korea

Polymer network (PN) structures of PSBP was analysed with LC
removed by hexane cleansing. With different LC and monomer fromprevious reports, the PN resulted in was a solid layer, rather than a grid
network. That means BP was not stabilized by PN. This phenomenon
was interpreted as a MS effect.
LCTp5 - 5

Withdrawn

LCTp5 - 6

A Single Step Method for Characterizing Blue PhaseLCs at Various Temperatures
P. Joshi*,**, J. D. Smet*,**, X. Shang*,**, D. Cuypers*,**,
G. V. Steenberge*,**, S. V. Vlierberghe*, P. Dubruel*,
H. D. Smet*,***Gent Univ., Belgium**imec, Belgium

Characterization of blue phase liquid crystals (BPLC) at different
temperatures is an interesting but time consuming research activity. We
present a quick and efﬁcient one step method to record the polarization
optical micrograph (POM) depicting texture of BPLC at various
temperatures simultaneously and also support our case with COMSOL
simulations.
LCTp5 - 7L

Effect of Polyaniline Functionalized Graphene
Doping on Blue Phase Liquid Crystal
S.-B. Ni, J.-L. Zhu, H.-J. Huang*, K.-C. Lee*, J.-G. Lu
Shanghai Jiao Tong Univ., China*China Star Optoelect. Tech., China

The effect of polyaniline functionalized graphene nanosheets (G-PANI)
on electro-optical properties of polymer-stabilized blue phase liquid
crystals (PS-BPLCs) has been studied. The Kerr constant of PS-BPLC
doped with 0.05wt% of G-PANI is increased by ~55% compared withthat of PS-BPLC. Meanwhile, response time and hysteresis of PSBPLC are not affected.
LCTp5 - 8L

Cholesteric Blue Phases from a Mixture of Rod-Like
Liquid Crystal and Photoresponsive Bent-Core
MesogenM.-J. Gim, K.-W. Park, S.-T. Hur, S.-W. Choi
Kyung Hee Univ., Korea

Photoinduced BP had a tendency to be easily destroyed by electric
ﬁeld, a factor that may be a critical obstacle for electro-optical (EO)
applications. In contrast, the intrinsic cubic BP was more stable inapplied electric ﬁelds and exhibited an EO performance that could bedeﬁned by the Kerr effect.
64Friday

December 6
Friday, December 6

9:00 - 10:20

Mid-sized Hall A

LCT5: Display Mode (2)Chair:
Co-Chair:S. Ishihara, Osaka Inst. of Tech., Japan
K. Miyachi, Sharp, Japan

LCT5 - 1
9:00

Field-Induced Optically Isotropic State in Bent Core
Nematic LCs: Proof of Their Optical Biaxiality
O. Elamain, G. Hegde*, F. C. Katalin**, L. Komitov
Univ. of Gothenburg, Sweden*Univ. Malaysia Pahang, Malaysia**Hungarian Ac. of Sci., Hungary

The ﬁeld-induced optically isotropic state in the bent core nematic
liquid crystals is considered to be an unambiguous proof of their ﬁeldinduced optical biaxiality. Their electro-optical behavior is explained bya simple model in which the molecular bend shape plays a vital role.
LCT5 - 2
9:20

The Improvement for TN-LCD Response Time byPartial Polymer Matrix Formation in the Vicinity of
LC Alignment Layer Surfaces
K. Takatoh, T. Ide, A. Harima, M. Akimoto
Tokyo Univ. of Sci. Yamaguchi, JapanUV irradiation to LC monomer in TN-LCDs at temperature higher thanthe clearing point, the formation of polymer layer possessing alignment
ability was conﬁrmed. By selecting appropriate temperature, partial
polymer matrix in the vicinity of alignment layer could be formed. It
realized fast decay time and relatively low driving voltage.
New Electrically-Controllable LC Depolarizers Using
Amorphous-Alignment Structure
Y. Nagatsuka, Y. Iimura
Tokyo Univ. of A&T, Japan
We have developed a new type of an electrically-controllable LC
depolarizer which is a sandwich-type cell with amorphous alignment
structure. Incident linearly-polarized lights to the device are converted
to spatially-dependent polarized lights acting as apparently random
polarized lights. We prove that the LC depolarizer is useful for
eliminating polarization-dependent effects.

65

LCT

LCT5 - 3
9:40

Friday
LCT5 - 4
10:00

December 6
Low Operating Voltage and Good Contrast Ratio
Cholesteric LC Applied in Active-Matrix TFT
Transparent Display
J.-H. Chen, C.-W. Su, J.-T. Lien
Chunghwa Picture Tubes, Taiwan

In this paper, we have proposed a new cholesteric liquid crystal (ChLC)
that can achieve lower operating voltage and good contrast ratio. In
addition, we have successively developed the 11.4-in. transparent
display with bistable mode.
----- Break ----10:40 - 12:15

Mid-sized Hall A

LCT6: Evaluation
Chair:
Co-Chair:

M. Inoue, Apple, Japan
A. Kubono, Shizuoka Univ., Japan

LCT6 - 1
10:40

Improving the Image Sticking of Photo-Alignment
LCD Panel by Polymer Stabilization Technology
H.-M. Fu, C.-S. Hsieh, J.-T. Lien
Chunghwa Picture Tubes, Taiwan

In this paper, we successfully demonstrate the photo-alignment panel
without image sticking phenomenon. The image sticking phenomenon
results from impurities and ions existing in the panel. Such a problem
can be detected by ﬂicker measurement and solved by Polymer
Stabilization Alignment Liquid Crystal (PSALC).
LCT6 - 2
11:00

Image Sticking Improvement by Optimizing Gamma
Voltages of Low Grey Levels
X. Zhong, H. J. Huang, X. Ma, K.-C. Lee
Shenzhen China Star Optoelect. Tech., China

A novel optical method was introduced to optimize gamma voltages oflow grey levels. It helps to reduce the residual DC effectively andimprove the image sticking performance of VA type LCD.
LCT6 - 3
11:20

Electric Field Interference among Vertically Aligned
In-Plane-Switching Mode
Y.-Y. Kung, S.-W. Tsao, M.-J. Lu, C.-Y. Chen, T.-L. Ting,
W.-H. Hsu, J.-J. Su
AU Optronics, Taiwan

This paper discusses the e-ﬁeld interference among vertically aligned
in-plane-switching mode. The results show that the e-ﬁeld between thein-plane-switching electrode pair will interfere with that of the adjacentpair when the spacing difference between them is too large. Hence,
similar-pitches pairs should be arranged as neighbors to avoid
interference.

66

Friday
LCT6 - 4
11:40

December 6
Pursuing Peak Performance LCD of Mobile
Application
S. L. Yang, J.-P. Yu
AU Optronics, Taiwan

AUO announced the ﬁrst high optical performance LCD called Peak
Performance LCD (P.P. LCD) compatible with OLED optical
performance. P.P. LCD has wide viewing angle (FWHM> 90 degree)
and wide color gamut (Adobe RGB coverage > 95%). This novel design
has great optical performance under most user conditions.
LCT6 - 5L
12:00

Novel Microstructure Film for Improving Viewing
Angle Characteristics of LCD
E. Yamamoto, T. Kanno, S. Katsuta, Y. Asaoka, T. Maeda,
T. Kamada, H. Yoshida, Y. Tsuda, K. Kondo
Sharp, JapanThe novel microstructure ﬁlm has been developed to improvedrastically the viewing angle characteristics of the LCD. The novel LCD
doesnʼt blur in the frontal image, and has realized the more excellent
visibility under a bright ambient light than the LCD using theconventional diffusing ﬁlm.
----- Lunch ----13:30 - 14:30

Mid-sized Hall A

LCT7: Photo Alignment
K. Ono, Panasonic, Japan
T. Nose, Akita Pref. Univ., Japan

LCT7 - 1
13:30

LC Alignment on a New Photo-Alignment
Material with Liquid Crystalline Properties

LCT

Chair:
Co-Chair:S. Inoue, K. Obayashi, Y. Iimura
Tokyo Univ. of A&T, Japan
We have studied a new photo-alignment material that has liquid
crystalline properties. By using a self-alignment nature of the material,
A low dosage of exposed UV light produces signiﬁcant surface
anchoring. This material is applied to fabricating IPS samples, and theimage sticking and the voltage-holding ratio are investigated.
LCT7 - 2
13:50

Polarization Mask by Patterned Rubbing Alignment
Technology for Azodye Photoalignment
A. A. Muravsky, A. A. Murauski, V. E. Agabekov
Inst. of Chem. of New Materials NAS Belarus, Belarus

Implementation of photoalignment for Patterned Retarder requires
exposure conditions with deﬁned distribution of polarization direction.
We applied novel Patterned Rubbing Alignment Technique to fabricate
patterned twister mask structure that provides linear polarization
direction modulation. Being not photosensitive such polarization maskallows multi-domain azo-dye photoalignment in one mask process.
67

Friday

December 6

LCT7 - 3
14:10

Light-Control of LC Alignment from Vertical to
PlanarA. A. Rasha, G. Hegde*, L. Komitov
Univ. of Gothenburg, Sweden*Univ. Malaysia Pahang, Malaysia

Continuous or discontinuous transition from vertical to planar alignment
was found in nematic cells, containing polyimide alignment layer
exposed to linear polarized UV light, depending on the layer priortreatment. Without any treatment the polyimide ﬁlm is promoting
vertical alignment. Simple model is suggested to explain thesealignment transitions.
Author Interviews and Demonstrations
16:40 – 17:20

The 20th Anniversary Session“Past, Present and Futureof Display Technology”
by FMC Workshopannisa
ver ryth

20

IDW

Wednesday, December 4, 2013
14:00 – 17:00 (FMC1 & FMC2)
Main Hall A, 1F
See page 87-89 for details–The 20th Anniversary– Keynote & Special Session“What’s the Next Display?”
by LCT Workshop
A future manufacturing technologies
and newly developed LCD panels will bepresented.
Wednesday, December 4, 2013
14:00 – 16:30 (LCT1 & LCT2)
th20
Mid-sized Hall A, 1F
IDW
See page 47-48 for details

anni

sa
ver ry68

Wednesday

December 4Workshop on
Active Matrix Displays
Wednesday, December 4
13:40 - 16:40

Main Hall C

Poster AMDp1: Oxide TFT
Special Topics of Interest on Oxide TFT
AMDp1 - 1

Investigation on the Oxide TFT Gate Driver Circuits
Using Bias Offset Method
Y. H. Jang, H. N. Cho, W. S. Choi, K. I. Chun, M.-G. Kang,
K. Choo, B. Cho, J. U. Bae, W. Shin, I. Kang
LG Display, Korea

Novel oxide TFT gate driver circuits using bias offset method has been
investigated. The inverters in the circuit provide offset voltages toprevent operation failure due to charge leakage. Measurement wasdone on the gate driver circuits integrated in FHD panel and the effectis analyzed.
AMDp1 - 2

A 32-in. HD LCD-TV Display Driven by Amorphous
IGZO TFTs
S.-C. Liu, C.-Y. Su, W.-H. Li, L.-Q. Shi, X.-W. Lv, Y.-T. Hu,
H.-J. Zhang, C.-Y. Tseng, Y.-F. Wang, C.-C. Lo, A. Lien*
Shenzhen China Star Optoelect. Tech., China*TCL Corporate Res., China

A 32-in. HD (1366 x 768) LCD-TV by using a-IGZO TFT which was
fabricated at Gen 4.5 glass substrate with IGZO (1:1:1) AC sputteringsystem for TFT-LCD. TFT with an a-IGZO channel layer exhibited goodsubthreshold swing (S.S), Ion/Ioff ratio, threshold voltage and mobilityof 0.15 V/decade, 2 108, 0.08 V and 19.01 cm2/Vs, respectively.
Electrical Performance Enhancement of a-AZTO by
a Low Temperature Treatment
P.-T. Liu, C.-S. Fuh, L.-F. Teng, Y.-S. Fan, C.-H. ChangNat. Chiao Tung Univ., Taiwan
In this study, a supercritical ﬂuid (SCF) technology is proposed toenhance the electrical performance and reliability of a-AZTO TFTs. The
SCF provides liquid-like solvency and gas-like diffusivity, giving it
transport capacity to take the H2O molecules into ﬁlms and terminate
the traps in ﬁlms by the oxidization.

69

AMD

AMDp1 - 3

Wednesday
AMDp1 - 4

December 4
New a-IGZO TFT Gate Driver Circuit with AC-Driven
Pull-Down Circuit
C.-E. Wu, F.-H. Chen, M.-H. Cheng, C.-L. Lin
Nat. Cheng Kung Univ., Taiwan

This work presents a gate driver circuit using indium-gallium-zinc oxide(a-IGZO) thin-ﬁlm transistors (TFTs). The proposed circuit suppresses
the threshold voltage shifts and completely turns off the a-IGZO TFTs
having negative threshold voltage. Simulation reveals the proposed
gate driver circuit can stably operate with a-IGZO TFT having negative
threshold voltage.
AMDp1 - 5

In-Situ Threshold Voltage Shift Monitoring of
Amorphous InGaZnO Thin-Film Transistors
J. H. Kang, E. N. Cho, I. Yun
Yonsei Univ., Korea

Threshold voltage shift (ΔVth) characteristics of amorphous InGaZnO
thin-ﬁlm transistors under positive gate bias stress are investigated andthe monitoring ΔVth from constant current induced drain voltage is
proposed. The extracted ΔVth characteristics are then analyzed using
the stretched exponential model and the characteristics of the subgap
density of states.
AMDp1 - 6

High Reliability of Back Channel Etch-Type TFTs
Using New Oxide Semiconducting Material
M. Ochi, S. Morita, Y. Takanashi, H. Tao, H. Goto,
T. Kugimiya, M. Kanamaru*
Kobe Steel, Japan*Kobelco Res. Inst., Japan

We report successful fabrication of the BCE-type TFTs with Mo/Al/Mo
electrodes using etchant resistive new oxide semiconductor thin ﬁlms. It
is found that the additional annealing process is really effective torestore the TFT surface damage after the BCE process. The TFTs
exhibit a high stress stability under the LNBTS.
AMDp1 - 7

The Study on Sol-Gel IGZO Thin Film Transistors
with Top Polymer Gate Insulators
Y. W. Wang, M. S. Lai, C. Y. Huang, W.-C. Su
Nat. Changhua Univ. of Education, Taiwan

We have investigated the top gate IGZO thin ﬁlm transistors withpolymer gate insulators. Multiple approaches were adopted for
improving device performance. Electron mobility was upgraded almost
103 times for stacking IGZO layers. The device characteristics showeda mobility 0.05 cm2/Vs and an on/off current ratio over 103.

70

Wednesday
AMDp1 - 8

December 4
Process Improvement for Reliability of Oxide TFT
Display
M. Zhang, Y. Zhang, J. Hu, Y. Shi, X. Zhang, Y.-C. Chung,
J.-K. Kim, G. Tian, Y. Xu
Hefei BOE Optoelect. Tech., China

The article studied the relation between oxide TFT (IGZO) process andreliability of product. From experiments, the appropriate conditions
were adopted in the process improvement. The recommended
conditions of IGZO process, such as higher IGZO anneal temperature,
ESL anneal temperature and PVX deposition temperature, were
provided in this paper.
AMDp1 - 9

Self-Aligned Top-Gate a-IGZO Thin-Film Transistor
with N2 Plasma-Treated Source/Drain Regions
S. Chi, X. Xiao, X. He, S. Zhang
Peking Univ., China

Self-aligned top-gate a-IGZO TFT with homogenous source/drain andchannel is fabricated. The low resistance of source/drain regions isachieved using a N2 plasma treatment. After the N2 plasma treatment,
the resistivity of IGZO ﬁlm experiences a sharp decrease. A simple andcost-effective self-aligned top-gate TFT technology is thus
demonstrated.
AMDp1 - 10 Influence of Temperature Annealing on Electrical
Performances of Oxide TFT
B.-L. Yeh, C.-N. Lin, C.-C. Wu, C.-M. Chang, W.-B. Wu,
C.-Y. Chen
AU Optronics, Taiwan
We investigated the impact of the power deposition in etch-stopper
layer (ES layer) and high temperature annealing in the active layer andES layers, respectively for stability of Oxide-TFT. For stability test, thedevices during active layer active annealing under positive andnegative bias stress, respectively, exhibited weak shift.

M. Furuta, T. Kawaharamura, T. Kaida, D. Wang
Kochi Univ. of Tech., Japan
High-mobility IGZO TFTs were demonstrated at 360˚C with an IGZO
channel and AlOx gate dielectric stack that was deposited by ozoneassisted solution-based atmospheric pressure (AP) process. The
mobility of the AP-processed IGZO TFT signiﬁcantly improved to 12.3
cm2/Vs which is comparable to the value obtained from vacuum
processed IGZO TFTs.

71

AMD

AMDp1 - 11L High Mobility Atmospheric-Pressure-Processed
IGZO TFT with AlOx/IGZO Stack Fabricated by Mist
Chemical Vapor Deposition

Wednesday

December 4

13:40 - 16:40

Main Hall C

Poster AMDp2: Active-Matrix Devices
AMDp2 - 1

Temperature Sensor Using Poly-Si TFT and 1T1C
Circuit with Gate Bias Control
J. Taya, K. Kojima, T. Mukuda, A. Nakashima, Y. Sagawa,
T. Matsuda, M. Kimura
Ryukoku Univ., Japan

We have proposed a temperature sensor using a poly-Si TFT and
1T1C circuit. Particularly in this presentation, by controlling the gatebias, it becomes possible to detect the temperature more correctly. We
think that it is promising to integrate this temperature sensor in some
applications using TFTs.
AMDp2 - 2

Operational Amplifier Using Poly-Si TFTs
- Characteristic Comparison between Multiple
Output Stage Numbers Y. Ito, S. Terada, Y. Imuro, K. Setsu, T. Matsuda,
M. Kimura
Ryukoku Univ., JapanWe are evaluating operational ampliﬁers using poly-Si TFTs.
Particularly in this presentation, we report characteristic comparison
between multiple output stage numbers. It is found that the gain islarger as the output stage number increases, but the offset voltage still
exists even if the output stage number changes.
AMDp2 - 3

Bias-Temperature Instability Modeling for On-GlassIntegrated Shift Resister Circuit Design Using
Amorphous Silicon TFTs
M. Shin, J. Kang, K. Kim, Y. Choi, H. Bang, K. Lee
LG Display, Korea

We introduce ∆Vth empirical formula derived from prolonged BTS testof various driving condition for predicting malfunction and lifetime of
product using amorphous silicon technology. In the result, we veriﬁed
the fact that match well between the values which was simulated using
SPICE circuit simulator and on-going reliability test values.
AMDp2 - 4

Optimized Pixel Design to Improve Oblique Picture
Quality for 12-Domain Polymer Stabilized Vertical
Alignment Display
C.-H. Chen, Z. Liao
Shenzhen China Star Optoelect. Tech., China

A novel pixel structure with 12-domain was developed to improve
oblique image quality including color shift and smoothness of gamma
for polymer stabilized vertical alignment (PSVA) display. Furthermore,as other commercial 8-domain pixel types, it has similar opticalluminance and without any extra driver ICs due to utilize 1G-1D driving.

72

Wednesday
AMDp2 - 5

December 4
PMOS LDD Structure and Conditions for Wide
Driving Range of Driving TFT
H. Jeon*,**, S. Lee**, Y. Lee**, K. Jang*, Y.-J. Lee*, J. Yi**Sungkyunkwan Univ., Korea**Samsung Display, Korea

This paper shows that LDD with width of 2 µm has wide DR-range.
LDDs with width of 0, 3 or 4 µm have small DR-range or have too low
on current value and cannot be used as driving TFTs. Wide DR-range
is obtained with doping concentration of less than 1x1013 / cm2.
AMDp2 - 6

A Cascaded Type Level Shifter for High-Voltage
Generators
M. Yamashita, M. Fukuhara, M. Yoshida
Tokai Univ., Japan

In this paper, we propose a cascaded type level shifter using LTPSTFT. By simulation results, the output voltage swing of a two-stage
cascaded type level shifter is about 9.4 V. In addition, the output voltage
of a high-voltage generator using the level shifters is about 9.5 V.
AMDp2 - 7

An Integrated a-Si:H Gate Driver Circuit Design for
Low Power Consumption TFT-LCD Application
Y. Qiao*,**,***, Y. Li**,***, H. Zheng**,***, C.-T. Liao**,***,
X. Guo*, T.-S. Jen**,****Shanghai Jiao Tong Univ., China**Infovision Optoelect., China***Inst. of Jiangsu Flat-Panel-Display Tech., China

In this work, we presented a novel hydrogenated amorphous siliconthin-ﬁlm transistor (a-Si:H TFT) integrated gate driver circuit which
comprises a level shift unit and has the ability of generating multi-levelgate output waveforms. The circuit maintains excellent driving capability
with relatively lower power consumption.
AMDp2 - 8AMD

An AMOLED Pixel Circuit with Negative VTH
Compensation Function
C. Leng, L. Wang, S. Zhang
Peking Univ., China

This paper presents an AMOLED pixel circuit which uses a “sourcefollower” to sense VTH, enabling a precise compensation even if theinitial VTH value is negative. In addition, the circuit can compensate for
performance variations of both TFTs and OLED.

73

Wednesday
AMDp2 - 9

December 4
Formation of SiO2 Thin Films on Polycrystalline
Silicon Thin Films from Polysilazane Solution by
CO2 Laser Annealing
D. Hishitani*, M. Horita*,**, Y. Ishikawa*,**, Y. Watanabe***,H. Ikenoue***, Y. Uraoka*,***Nara Inst. of S&T, Japan**CREST, Japan***Kyushu Univ., Japan

We investigated the formation of SiO2 thin ﬁlms on polycrystalline
silicon thin ﬁlms by CO2 laser irradiation of perhydropolysilazane. We
succeeded in the formation of SiO2 containing few OH groups andhaving uniform composition in the thickness direction. We considered
the effect of CO2 laser irradiation was related to bond vibration.
AMDp2 - 10L Effect of H2 Annealing after BLDA for Low-Cost PolySi TFT
K. Sugihara, K. Shimoda, T. Okada, T. Noguchi
Univ. of the Ryukyus, Japan
Poly Si TFT was successfully fabricated using BLDA. All the process
was conducted using sputtering and vacuum evaporation without CVD
and was limited below 400˚C. After hydrogenation, TFT characteristics
improved drastically. High performance TFT using BLDA is expected onplastic and on ﬂexible sheet with low cost.
AMDp2 - 11L Lateral Large-Grained CLC Low-Temperature
Poly-Si TFTs with Sputtered High-k Gate Dielectric
T. Meguro, A. Hara
Tohoku Gakuin Univ., Japan
We combined high-k gate dielectric with CLC poly-Si TFT and achieved
high performance with s.s.=240 mV/dec and ﬁeld-effect mobility of 140
cm2/Vs without hysteresis in transfer characteristic and C-V curve. This
result demonstrates feasibility of high-k CLC LT poly-Si TFTs.
AMDp2 - 12L Self-Aligned Metal Double-Gate Ni-SPC LT Poly-Si
TFTs on Glass Substrate
T. Meguro, A. Hara
Tohoku Gakuin Univ., Japan
Self-aligned metal double-gate Ni-SPC LTPS TFTs have been
fabricated on a glass substrate below 600 C. The small Vth variation,high on-current, and superior s.s. value were clearly observed,
indicating the superior gate controllability of the channel region
compared to those of TG Ni-SPC LTPS TFTs.

74

Wednesday

December 4

AMDp2 - 13L Inkjet Printing Technique for Manufacturing SingleCrystal Films for Organic Thin-Film Transistors
H. Minemawari, T. Yamada, M. Tanaka, T. Hasegawa
AIST, JapanWe
synthesizedmono-functionalized
asymmetricbenzothienobenzothiophene (Cn-BTBT) and fabricated ﬁlms by the
double-shot inkjet printing technique. It was found that the asymmetric
BTBTs also can form exceptionally uniform thin ﬁlms composed oflarge single-crystal domain. OTFTs using printed single-crystal ﬁlms of
C11-BTBT exhibited a mobility as high as 9 cm2/V·s.
AMDp2 - 14L Elevated-Electrode Structure in Organic Thin-Film
Transistors
S. K. Kim, C.-H. Shim, T. Edura, K. Tsugita, S. Yukiwaki,
C. Adachi, R. Hattori
Kyushu Univ., JapanA new structure of organic thin-ﬁlm transistor named the “ElevatedElectrode Structure” shows mobility, on/off ratio as high as those of thestructure with bottom-gate and top-contact and higher than those ofstructure with bottom-gate and bottom-contact in actual devices
fabricated using DNTT.
13:40 - 16:40

Main Hall C

Poster AMDp3/OLEDp2: AMOLED
AMDp3/A Pixel Circuit for AMOLED Displays Compensating
OLEDp2 - 1 for Threshold Voltage and Mobility Variation
C.-K. Kang*,**, B.-D. Choi***Samsung Display, Korea**Sungkyunkwan Univ., Korea

AMDp3/A Compensation Driving Gear for the Electronic
OLEDp2 - 2 Degradation of AMOLED
B.-J. Sun, Y.-Y. Huang, C.-H. Huang, S.-C. Huang
Chunghwa Picture Tubes, Taiwan
The threshold voltage degradation of AMOLED pixel circuit has
improved with new programming method. The error rate of OLED
current has decreased to 2.06% at least when the degradation rangesof threshold voltage are 0.33 and -0.33 V. The simulation result
demonstrates that the proposed circuit can improve the stability
current.
75

AMD

A new pixel circuit for an active-matrix organic light-emitting diode(AMOLED) is proposed with a novel driving scheme based on lowtemperature, polycrystalline-silicon thin ﬁlm transistors (LTPS TFTs).
The proposed circuit consists of three n-type TFTs and a capacitor to
successfully compensate for variations of the threshold voltage andmobility in the TFTs.

Wed./Thu.

December 4/5

AMDp3/New Pixel Circuit Using a-IGZO TFTs to Compensating
OLEDp2 - 3 for OLED Luminance Drop of AMOLED Displays
P.-S. Chen, W.-Y. Chang, F.-C. Chang, C.-L. Lin
Nat. Cheng Kung Univ., Taiwan
This work presents a new pixel circuit design adopting amorphous
indium-gallium-zinc-oxide (a-IGZO) thin-ﬁlm transistors (TFTs) thatcompensates for the threshold voltage shift of the driving TFT andameliorates the luminance drop of OLED for active-matrix organic lightemitting diode (AMOLED) display.
AMDp3/
Low Voltage Operation of Organic Field-Effect
OLEDp2 - 4 Transistors with Embedded Electrodes
Y. Kimura, T. Nagase, T. Kobayashi, K. Takimiya*,
M. Ikeda**, H. Naito
Osaka Pref. Univ., Japan*Hiroshima Univ., Japan**Nippon Kayaku, JapanLow voltage operation of organic ﬁeld-effect transistors (OFETs) withembedded source/drain electrodes has been demonstrated. Soluble
small molecules of 2,7-dioctyl [1]benzothieno[3,2-b][1] benzothiophene
and CYTOP were used as organic semiconducting and insulating
layers, respectively. Low voltage operation (VDS=-10 V) is shown bythinning the gate insulating layer of the OFETs.

Thursday, December 5
9:00 - 10:25

Main Hall B

AMD1: Advanced Si TFT
Chair:
Co-Chair:K. Miura, Toshiba, Japan
T. Noguchi, Univ. of the Ryukyus, Japan

AMD1 - 1:
9:00

Invited The Physics and Technology of BridgedGrain Polycrystalline Silicon Thin-Film Transistor
M. Wong, H. S. Kwok, W. Zhou, R. Chen, M. Zhang,
S. Chen, T. Chow*
Hong Kong Univ. of S&T, Hong Kong
*Sinodisplay Tech., China

Bridged-grain refers to a device structure incorporating multiple doped“pockets” in the channel of a thin-ﬁlm transistor. The short-channel andthe multi-junction effects are beneﬁcially exploited to increase the oncurrent and to reduce the leakage current. The physics of the device
operation is studied and the beneﬁts are experimentally demonstrated.

76Thursday
AMD1 - 2
9:25

December 5
Degradation Behaviors of Bridged-Grain
Polycrystalline Silicon Thin Film Transistors under
DC Bias Stresses
M. Zhang, W. Zhou, R. Chen, M. Wong, H.-S. Kwok
Hong Kong Univ. of S&T, Hong Kong

Device degradation behaviors of bridged-grain (BG) polycrystalline
silicon thin ﬁlms transistors (TFTs) under DC bias stresses are
examined and analyzed. The stress test results reveal that BG TFT has
better self-heating reliability, better hot carrier reliability and better
negative bias temperature instability, compared to normal TFTs.
AMD1 - 3:
9:45

Invited Low-Temperature Formation of SingleCrystalline Silicon on Glass and Plastic Substrates
and Its Application to MOSFET Fabrication
S. Higashi, K. Sakaike, S. Hayashi, S. Morisaki,
M. Akazawa, S. Nakamura, T. Fukunaga
Hiroshima Univ., Japan

Fabrication of MOSFETs by µ-TPJ crystallization of strip channel Si
and operation of 8-bit shift register at a supply voltage of 5 V with theclock frequency of 50 MHz have been achieved. A novel layer transfer
technique, which enables formation of single-crystalline Si (100) layer
on PET substrate is proposed.
AMD1 - 4L
10:10

Four-Terminal Planar Metal Double-Gate LowTemperature Poly-Si TFTs for System-on-Glass
R. Kurosu, S. Kamo, T. Sato*, A. Hara
Tohoku Gakuin Univ., Japan*Hiroshima Univ., Japan

High-performance four-terminal embedded metal double-gate CLC
poly-Si TFTs were fabricated at a temperature below 550 ℃ on a glass
substrate. The superior Vth controllability and high mobility allows the
fabrication of a high-speed and low-power-dissipation system-on-glass.

AMD----- Break -----

77

Thursday

December 5

10:40 - 12:25

Main Hall B

AMD2: Oxide TFT: Applications
Special Topics of Interest on Oxide TFT
Chair:
Co-Chair:

M. Wong, Hong Kong Univ. of S&T, Hong Kong
N. Morosawa, Sony, Japan

AMD2 - 1:
10:40

Invited 65-in. OLED TV Developed by Oxide TFT
and Fine Metal Mask Technologies
L.-F. Lin, T.-H. Shih, J.-Y. Lee, W.-H. Wu, S.-C. Wang,
Y.-H. Chen, C.-C. Chen, C.-L. Chen, P. P. Lin, Y.-H. Chen,
S.-J. Yu, C.-H. Liu, H.-C. Ting, H.-H. Lu, L. Tsai, H.-S. Lin,
C.-Y. Chen, L.-H. Chang, Y.-H. Lin
AU Optronics, Taiwan

A 65-in. oxide TFT AMOLED TV panel has been demonstrated. The
side by side OLED device is realized by ﬁne metal mask. The TFT
shows an excellent characteristic̶long range threshold voltage
uniformity is 0.34 V. The dam and ﬁll encapsulation method shows a
simple process procedure and high stability.
AMD2 - 2:
11:05

Invited Flexible AMOLED Display Driven by
Amorphous InGaZnO TFTs
K. Miura, T. Ueda, N. Saito, S. Nakano, T. Sakano,
H. Yamaguchi, I. Amemiya
Toshiba, Japan

Threshold voltage shifts of amorphous In-Ga-Zn-Oxide (a-InGaZnO)
TFTs on plastic substrates against bias-temperature stress werereduced below 0.03 V. We have developed a 10.2-in. WUXGA ﬂexible
AM-OLED display driven by a-InGaZnO TFTs fabricated on atransparent polyimide ﬁlm. We demonstrated an interactive prototype
ﬂexible-display system integrated with a bend-input function.
AMD2 - 3
11:30

12.1-in. WXGA Plastic AMLCDs Driven by Low
Temperature Amorphous IGZO TFTs
S.-Y. Sun, W.-C. Huang, W.-T. Lin, L.-Y. Lin, C.-C. Cheng,
C.-Y. Liu, M.-F. Chiang
AU Optronics, Taiwan

Low temperature a-IGZO TFTs were fabricated successfully on plastic
substrates at 220 C. The ﬂexible reliability of a-IGZO TFTs isinvestigated. For a-IGZO TFTs application in ﬂexible display, it suffers
not only electrical stress but also mechanical stress. It is found thatboth of them would affect the electrical characteristic of a-IGZO TFTs.

78

Thursday
AMD2 - 4
11:50

December 5
A Novel Embedded Non-Volatile Memory Utilizing
IGZO Conductor Transformation for System-onGlass Application
N. Ueda, S. Katoh, T. Matsuo
Sharp, JapanFor the ﬁrst time, we report a novel application of IGZO transformation
to conductor, as an electrically programmable non-volatile memory. The
transformation is performed by Joule heating of the channel. A very
wide read window and excellent retention are demonstrated. This
memory is fully compatible with standard IGZO TFT process.
AMD2 - 5L
12:10

Electron-Beam-Induced Crystallization of
Amorphous In-Ga-Zn-O Thin Films Fabricated by
UHV Sputtering
T. Kamiya*, K. Kimoto**, N. Ohashi*,**, K. Abe *,Y. Hanyu*, H. Kumomi*, H. Hosono**Tokyo Inst. of Tech., Japan**NIMS, Japan

Microscopic structures of a-In-Ga-Zn-O was studied using S/TEM. To
avoid crystallization, samples were measured without any thinning andprocessing, and low electron-beam voltage/current were employed. It
was conﬁrmed that all the a-IGZO ﬁlms were amorphous irrespective ofhydrogen content. Instead, crystallization was observed when theprobe electron dose was increased.
----- Lunch ----13:30 - 14:55

Main Hall B

AMD3: Oxide TFT: Reliability (1)Special Topics of Interest on Oxide TFT
B. D. Ahn, Samsung Display, Korea
H. Hamada, Kinki Univ., Japan

AMD3 - 1:
13:30

Invited Photo-Bias Instability of Metal Oxide Thin
Film Transistors for Next Generation Active Matrix
DisplayAMD

Chair:
Co-Chair:J. K. Jeong, J. H. Song
Inha Univ., Korea
Degradation mechanisms of oxide TFTs under the negative bias
illumination stress were discussed including the trapping of photocreated hole carriers, the ionization of oxygen vacancy defect and theambient atmosphere interaction. Based on the proposed mechanisms,
the routes to improve the photo-stability of oxide TFTs were proposed.

79Thursday

December 5

AMD3 - 2
13:55

Influence of Charge Trapping on Hysteresis in
InGaZnO Thin-Film Transistors under Negative Biasand Illumination Stress
M. P. Hung, D. Wang, J. Jiang, M. Furuta
Kochi Univ. of Tech., Japan

Double-sweeping mode and positive gate pulse mode were used toinvestigate the origin of NBIS induced hysteresis in InGaZnO thin-ﬁlm
transistors (IGZO TFTs). The electrons trapping in an ES bulk, holes
trapping in a GI, and defect generation in channel were dominantmechanism of instability of IGZO TFT under NBIS.
AMD3 - 3
14:15

The Negative-Bias-Illumination-Stress with Channel
Length Dependence in a-IGZO TFTs
J. G. Um, S. H. Park, J. U. Han, J. Jang
Kyung Hee Univ., Korea

We investigated the negative-bias-illumination-stress (NBIS) according
to channel length modulation in amorphous indium gallium zinc oxide(a-IGZO) thin-ﬁlm transistors (TFTs). In this result, we obviously foundthat in the case of longer channel TFT, the ΔVTH had shown verysmaller shift than shorter channel length TFT.
AMD3 - 4
14:35

Photo-Response Elimination of Amorphous
InGaZnO Thin Film Transistors by Introducing a
Mo-doped-ZnO Passivation Layer
Y.-C. Tsai, M.-Y. Tsai, L.-F. Teng, P.-T. Liu, H.-P. D. ShiehNat. Chiao Tung Univ., Taiwan

A Mo-doped ZnO (MZO) with a bandgap ~3.3 eV is adopted toeliminate the wavelength-dependent photo-responses in a-IGZO TFTs.
The MZO passivated a-IGZO TFTs presents ΔVth less than 1 V under
NBIS while the wavelength varied from 360 nm to 620 nm, whereas theunpassivated a-IGZO TFTs exhibits ΔVth around -10 V.
----- Break -----

80

Thursday

December 5

15:10 - 16:40

Main Hall B

AMD4: Oxide TFT: Reliability (2)Special Topics of Interest on Oxide TFT
Chair:
Co-Chair:J. K. Jeong, Inha Univ., Korea
H. Kumomi, Tokyo Inst. of Tech., Japan

AMD4 - 1:
15:10

Invited Stability of Oxide TFTs
J. Jang, M. Mativenga, J. G. Um, M. D. H. Chowdhury
Kyung Hee Univ., Korea

This paper reviews the electrical instabilities of oxide TFTs undervarious stress conditions such as PBS, NBS, NBIS, PBTS, and highcurrent-stress(HCS).
Degradation
mechanisms
explaining
experimental results are provided. Stability improvement methods, bothprocess-related and device structure-related, are proposed andevidence supporting their feasibility is provided.
AMD4 - 2:
15:35

Invited Enhancement of a-IGZO Oxide TFT
Performance by Novel Method Including Ultraviolet
and Thermal Annealing
B. D. Ahn*, Y. J. Tak*,**, H. J. Kim***Samsung Display, Korea**Yonsei Univ., Korea

We proposed the novel method for enhancement of a-IGZO oxide TFT
performance by ultraviolet and thermal annealing (UVA) treatment andcompared its properties to that of a conventional thermal annealing.
Our UVA-treated TFT had a higher ﬁeld-effect mobility and positivebias-stress stability than those of conventional thermal annealing.
AMD4 - 3
16:00

Effect of Back Channel on the Characteristics of
Solution-Derived Amorphous InZnO Thin-Film
Transistors
Y. Osada, Y. Ishikawa, L. Lu, Y. Uraoka
Nara Inst. of S&T, Japan

81

AMD

We investigated the channel layer thickness dependence on theperformance of amorphous InZnO thin-ﬁlm transistor fabricated byspin-coating process. Decreasing the channel layer thickness improved
the on-current and the ﬁeld effect mobility, signiﬁcantly. Thesephenomena can be explained by the back channel effect.

Thursday
AMD4 - 4
16:20

December 5
Fabrication and Electrical Properties of Highly
Stable Amorphous InGaZnO Thin-Film Transistors
P.-L. Chen, C.-L. Chiang, Y.-L. Chou, S. Li, Y.-F. Liu,
Q. Shang
Shenzhen China Star Optoelect. Tech., China

We have improved the storage stability, gate bias stress stability, andthermal stability of a-IGZO TFTs by tuning the ESL quality. The a-IGZO
TFTs with the high-quality ESL exhibit excellent electric properties andstabilities. A 120 Hz 32-in. UHD resolution TV panel has beendeveloped by using the a-IGZO TFTs.
----- Break ----16:50 - 18:10

Main Hall B

AMD5: Oxide TFT: Modeling & Devices
Special Topics of Interest on Oxide TFT
Chair:
Co-Chair:J. Jang, Kyung Hee Univ., Korea
K. Takatori, NLT Techs., Japan

AMD5 - 1:
16:50

Invited Modeling of Transparent Amorphous Oxide
Semiconductor Thin-Film Transistor
K. Abe, H. Kumomi, T. Kamiya, H. Hosono
Tokyo Inst. of Tech., Japan

We review operation models for transparent amorphous oxide
semiconductor thin-ﬁlm transistors (TAOS TFTs). After introducing
previous model, a model considering a carrier-density-dependent
mobility and subgap states of TAOS is explained. It reproduces the TFT
characteristics over a wide temperature range, and is applied to extract
annealing effect of subgap sates.
AMD5 - 2
17:15

Solution-Processed Metal Oxide TFTs for AMOLED
Applications
L.-Y. Lin, C.-C. Cheng, C.-Y. Liu, M.-F. Chiang, S.-Y. Sun,
P.-H. Wu, M.-T. Lee, H.-H. Wang
AU Optronics, Taiwan

Oxide TFT driving OLED was so popular due to its high mobility andperfect stability and uniformity . With solution manufacture, it is capable
to replace the vacuum system and achieve the mask-less process. In
this paper, we introduced the solution type metal oxide manufacture for
4-in. OLED.

82

Thu./Fri.

December 5/6

AMD5 - 3
17:35

A High Mobility Metal Oxide Thin Film Transistor
with Solution Coating Process
K.-H. Su, D.-V. Pham, A. Merkulov, A. Hoppe, J. Steiger,
R. Anselmann
Evonik Inds., Germany

We fabricate solution-processed metal oxide TFTs with Evonikdeveloped metal oxide based semiconductor and passivation. The
solution material/coating technology can be easily scaled up to larger
substrate size without inﬂuencing device homogeneity andperformance. With high mobility of 20 cm2/Vs, solution-processed TFT
is capable for AMOLED driving, high resolution and other high-end
applications.
AMD5 - 4L
17:55

Effect of Annealing on Oxygen Content
in SiO2/a-IGZO/SiO2 Stacks
S. Oh, J.-H. Baeck, H. S. Shin, J. U. Bae, W. Shin,I. Kang
LG Display, Korea

The thermal annealing effect of amorphous InGaZnO (a-IGZO)
semiconductor layer sandwiched between top and bottom SiO2 layers
is investigated. We illustrate the dynamics of inter-diffusion of
constituent atoms, especially oxygen, at the IGZO/SiO2 interfaces fordifferent annealing temperatures and correlate them with TFT device
characteristics.
Author Interviews and Demonstrations
18:30 – 19:10

Friday, December 6
9:00 - 10:20

Main Hall B

AMD6: Novel Applications
A. Facchetti, Polyera, USA
M. Inoue, Innolux, Japan

AMD6 - 1:
9:00

Invited Printed Organic TFTs for Interfacing Circuits
and Active Matrix
M. Charbonneau, S. Jacob, M. Benwadih, J. Bablet,
V. Fischer, D. Boutry, R. Coppard, I. Chartier, S. Abdinia*,
E. Cantatore*, G. Maiellaro**, E. Ragonese**,G. Palmisano***, R. Gwoziecki,
Minatec, France*Eindhoven Univ. of Tech., the Netherlands**STMicroelectronics, Italy***Univ. of Catania, Italy

This paper presents a printable organic complementary TFT
technology suitable for low cost plastic substrates. By combining stateof-the-art materials, printing technics and silicon-inspired compact
modeling and simulation approach, we have fabricated circuits thatprovide the switching, digital and analog functions required for thedevelopment of Printed Systems on Foil.
83

AMD

Chair:
Co-Chair:Friday
AMD6 - 2:
9:25

December 6
Invited Device Characterizations and Novel
Applications of Thin-Film Transistors
M. Kimura, T. Matsuda
Ryukoku Univ., Japan

Device characterizations and application proposals are important
besides investigations on device formations and fabrication processes
to develop TFTs. We introduce the device characterizations based on
low-f C-V methods in the author interview because of time limitation,and propose the novel applications for sensors and general electronics
in the oral session.
AMD6 - 3L
9:50

3-D Stacked Complementary TFT Devices Usingn-Type a-IGZO and p-Type F8T2 TFTs
- Comparison between Stacked and Sided
Configurations T. Hasegawa, M. Inoue, T. Matsuda, M. Kimura,
K. Nomura*, T. Kamiya*, H. Hosono*
Ryukoku Univ., Japan*Tokyo Inst. of Tech., Japan

We have developed 3-D stacked complementary TFT devices using
n-type α-IGZO and p-type F8T2 TFTs on PET substrates. We conﬁrm
correct input-output characteristics of inverter circuits. Particularly inthis presentation, we compare n-type α-IGZO, p-type F8T2, stacked
complementary, and sided complementary inverters.
AMD6 - 4L
10:05

512PPI High Resolution Mobile Displays with High
Aperture Ratio and Slim Border
M.-H. Lee, H.-W. Wang, Y.-W. Chang, C.-H. Wu, J.-H. Ye,
H.-H. Su, S.-H. Lu, A.-J. Tsai, W.-T. Pai, A. Huang,
S.-H. Huang
AU Optronics, Taiwan

We demonstrated an ultra-high resolution mobile display with highaperture ratio and slim border. Contrast to conventional design which
may suffer aperture ratio above 500PPI, this 512PPI display canachieve high aperture ratio of 60%. A new scan driver was also
employed to realize slim border of 0.65 mm width.
----- Break -----

84

Friday

December 6

10:40 - 12:20

Main Hall B

AMD7: Printed TFT
Chair:
Co-Chair:

M. Kimura, Ryukoku Univ., JapanY. Fujisaki, NHK, Japan

AMD7 - 1:
10:40

Invited Metal Oxides and Organic Materials for
Flexible Displays
Y. Xia, P. Tan, W. Zhao, H. Yan, D. Boudinet, Z. Chen,
Y. Zheng, H. Usta, M. Chen, J. Fang, S. W. Huang,
C. C. Hsiao, T. J. Marks, A. Facchetti*,***Polyera, USA**Northwestern Univ., USA

Organic thin-ﬁlm transistors (OTFTs) and metal oxide TFT (MOTFT)
are candidates for several new display and electronic circuit
applications. Here we demonstrate organic TFTs with carrier mobilities
up to 2-5 cm2 V­1s­1 and Ion:Ioff > 106 and oxide/ IGZO TFTs withmobilities > 20 cm2 V­1s­1.
AMD7 - 2
11:05

Low Process Temperature Organic TFT on PEN
Substrate
Y.-Y. Huang, S.-C. Chiang, Y.-H. Chen, I.-H. Lin,
H.-M. Chang, E. Hsu
Chunghwa Picture Tubes, Taiwan

In this study, p-type organic TFTs were fabricated by spin coating
method and ink-jet printing method, respectively. The Ion/Ioff ratio of
TFTs could be improved by patterning organic semiconductor with Ink
Jet Printing method. Due to the low process temperature, the organic
TFT on PEN substrate was also demonstrated.
AMD7 - 3
11:25

Flexible Single-Grain Si TFTs Fabricated from
Doctor-Blade Coated Cyclopentasilane on Polyimide
Substrate

AMD

J. Zhang, M. Trifunovic, M. van der Zwan, B. Mimoun,
H. Takagishi*, T. Shimoda*,**, K. Beenakker, R. Ishihara
Delft Univ. of Tech., the Netherlands*JST, Japan**JAIST, Japan

Single grain Si TFTs have been fabricated on a polyimide substratewith mobilities of 378 cm2/Vs and 129 cm2/Vs for electrons and holes,
respectively. Pure CPS has been doctor-blade coated, and an excimer
laser-crystallization step lead to grains of 3 µm. Transfer to a PEN foil
resulted in ﬂexible TFTs and CMOS inverters.

85Friday

December 6

AMD7 - 4L Invited Self-Aligned Imprint Lithography (SAIL) for
11:45
Manufacturing High Performance Flexible Display
Electronics
H.-J. Kim, E. Holland, J. Maltabes, R. Elder, A. Jeans*,
C. Perlov*, O. Kwon**, C. Taussig***, N. Morrison****Phicot, USA*Hewlett Packard, USA**Apple, USA***e-Inc, USA****Appl. Materials, Germany
Self-aligned imprint lithography(SAIL) is presented as a unique andfundamental solution to the issue of interlayer misalignment, which is amajor obstacle to achieving high resolution and yield in ﬂexible
electronics manufacturing. Copper and oxide semiconductors areincorporated to deliver backplanes that can drive ﬂexible OLED
displays.
AMD7 - 5L
12:05

A Flexible AMOLED Display Driven by Organic TFTs
with an Inkjetted Semiconductor Layer
A. Miyamoto, Y. Okumoto, K. Sasai, K. Morita
Panasonic, JapanA 4-inch 80-ppi ﬂexible AMOLED display was fabricated using organic
TFTs with an inkjetted semiconductor layer. To suppress variations in
OTFT characteristics, the process damage to polymer gate insulator
was re-covered by surface treatments, giving uniformity of thresholdvoltages of -0.2 0.45 V.
----- Lunch -----

Author Interviews and Demonstrations
16:40 – 17:20
Supporting Organization:
Thin Film Materials & Devices Meeting86

Wednesday

December 4Workshop on FPD Manufacturing,
Materials and Components
Wednesday, December 4
14:00 - 15:20

Main Hall A

R. Yamaguchi, Akita Univ., Japan
M. Miyatake, Nitto Denko, Japan

FMC1 - 1:
14:00

Invited Where is Disruptive Innovation by FPD?
T. Yunogami
Fine Processing Inst., JapanWhy cannot Japan cause innovation recently? The cause is thatJapanese misrecognize with innovation. Innovation is the technology
and product which spreads explosively, not "technical break-through”.
Prof. Christensen said disruptive technology creates a new market, andexpels sustaining technology. In lecture, we discuss where is disruptive
innovation by FPD.
FMC1 - 2
14:20

Past, Present, and Future: Photoresist for FPD
Fabrication
Y. Toyama, K. Taniguchi, T. Suzuki, H. Ikeda
AZ Elect. Materials Manufacturing Japan, Japan

Novolak-DNQ (diazonaphtoquinone) positive type photoresists havebeen being used in FPD manufacturing process for a long time.
Recently requirements for the new process and photoresist materials
have been more speciﬁed due to increasing functionality of display
devices. We have provided proper photoresist for each demand with
our experience and technologies.
FMC1 - 3
14:40

Past, Present, and Future: Color Filters and Surface
Films
T. Hotta
Dai Nippon Printing, JapanFor ﬂat panel displays such as LCDs, color ﬁlters and surface ﬁlms
have been essential components to realize color images with excellent
viewing quality. In this paper, past, present and future developments ofsuch components are described.

87

FMC

FMC1: The 20th Anniversary: Past, Present, and Future (1)Chair:
Co-Chair:Wednesday
FMC1 - 4
15:00

December 4
Past, Present, and Future: Large Size Photo-Mask
for Fine Patterning at FPD Manufacturing
T. Hirano, H. Ihara, Y. Iwanaga, Y. Yoshikawa,N. Imashiki, K. Yoshida
HOYA, Japan

With higher resolution of a panel, the pattern that needs resolving isapproaching the limit of the exposure machine. In order to improve this,we have developed the Mask that has the function to make the falling
exposure property enhance. This time, we report two developed New
Function Mask.
----- Break ----15:40 - 17:00

Main Hall A

FMC2: The 20th Anniversary: Past, Present, and Future (2)Chair:
Co-Chair:

K. Käläntär, Global Optical Solutions, JapanR. Yamaguchi, Akita Univ., Japan

FMC2 - 1
15:40

Past, Present, and Future: Polarizing Film
M. Miyatake, Y. Saiki
Nitto Denko, Japan

Nitto Denko has been enhancing properties and adding a number offunctions to polarizing ﬁlms, in line with evolution of LCDs. Here we
review our progress of development of polarizing ﬁlms, and reportfuture direction of the development including accuracy improvement for
absorption axis and approaches for thinner polarizing ﬁlm.
FMC2 - 2
16:00

Past, Present, and Future: Retardation Films and
Plastic Base Films
T. Toyoshima
ZEON, Japan

ZeonorFilm is a high-performance optical ﬁlm for FPD. The FPD market
has grown rapidly together with LCD technology. Recently, highresolution display panels and high-performance touch sensors havegained favor. In those areas, ZeonorFilm exhibits excellent optical
performance. This paper details Zeonʼs research focus areas forenabling next-generation displays via ZeonorFilm.
FMC2 - 3
16:20

Past, Present, and Future: Evolution of Mobile
Phone LED Backlight Unit
K. Käläntär, M. Shinohara*
Global Optical Solutions, Japan*Omron, Japan

In this paper we review the BLU technology trends that supported thesigniﬁcant advancement of the LCD especially in the mobile phones
within past 20 years. The light controlling technologies applied to BLU
during this period are discussed and the future image of BLU is
portrayed.
88

Wed./Thu.
FMC2 - 4:
16:40

December 4/5
Invited Past, Present, and Future: Transport of Gas
Molecules through Plastic Films and Organic
Adhesives for Electronic Devices
K. Nagai
Meiji Univ., Japan

Author Interviews and Demonstrations
17:20 – 18:00

Thursday, December 5
9:00 - 10:20

Main Hall A

FMC3: Oxide TFT: Process Technologies
Special Topics of Interest on Oxide TFT
Chair:
Co-Chair:T. Kamiya, Tokyo Inst. of Tech., Japan
T. Arikado, Tokyo Electron, Japan

FMC3 - 1:
9:00

Invited Structural Relaxation, Crystallization, andDefect Passivation in Amorphous In-Ga-Zn-O
T. Kamiya, K. Ide, K. Nomura, H. Kumomi, H. Hosono
Tokyo Inst. of Tech., Japan

Amorphous oxide semiconductor, represented by a-IGZO, is now usedin current FPDs. On the other hand, a-IGZO TFTs require thermal
annealing at 300 - 400oC for better uniformity and stability. Here, we
discuss structural relaxation, defect annihilation and creation by
thermal annealing in relation to hydrogen and oxygen effects.
FMC3 - 2
9:20

Wet Chemical, Damage Free In-Ga-Zn-O TFT
Processing
P. Vermeulen, P. Janssen, L. Robichaux, C. Allen
Sachem, USA

The results of etching formulations for wet chemical, damage free
IGZO TFT processing are presented. Selective etching of the source/
drain metal can be increased substantially by using SACHEMʼs
proprietary formulations. The use of an etch stop layer to protect the
IGZO channel is therefore not required, allowing for cost effective TFT
processing.

89

FMC

This paper presents the transport mechanisms of gas molecules, suchas oxygen (OTR) and water vapor (WVTR), through plastic ﬁlms andorganic adhesives used in printed and ﬂexible electronics devices, suchas in display applications.

Thursday
FMC3 - 3
9:40

December 5
In-Line Process Monitoring for Amorphous Oxide
Semiconductor TFT Fabrication Using MicrowaveDetected Photoconductivity Decay Technique
H. Goto, H. Tao, S. Morita, Y. Takahashi, A. Hino,
T. Kishi*, M. Ochi, K. Hayashi, T. Kugimiya
Kobe Steel, Japan*Kobelco Res. Inst., Japan

We have investigated the microwave-detected photoconductivity
responses from the amorphous In-Ga-Zn-O (a-IGZO) thin ﬁlms. The
peak values and the lifetime extracted by the reﬂectivity signals werecorrelated with TFT performances. It is concluded that the microwave
photoconductivity decay (µ-PCD) is a promising method for in-line
process monitoring for the IGZO-TFTs fabrication.
FMC3 - 4
10:00

Manufacturing Process of Oxide TFT Using
Solution-Processed Photosensitive Passivation
Layer
M. Takeshita, S. Abe, T. Kojiri, M. Hanmura, T. Goto*,
T. Ohmi*
ZEON, Japan*Tohoku Univ., Japan

We have developed a solution-processed Photosensitive Passivation
Layer (PPL) for an oxide TFT. We have also developed a manufacturing
process for oxide TFT that is suitable for the PPL process. By
controlling the oxygen concentration in the oxide semiconductor, wehave achieved an oxide TFT with the PPL.
----- Break ----10:40 - 12:00

Main Hall A

FMC4: Materials
Chair:
Co-Chair:R. Yamaguchi, Akita Univ., Japan
T. Tomono, Toppan Printing, Japan

FMC4 - 1:
10:40

Invited Potential of Nonlinear Optical Organic
Material for Green Light Source in Laser Projector
T. Tomono
Toppan Printing, Japan

Potential of Nonlinear optical (NLO) organic material for green lightsource in laser display was discussed. Organic device design guideline
for second harmonic generation (SHG) was described fromnonsymmetrical point of view by using some model material.

90Thursday
FMC4 - 2:
11:00

December 5
Invited Novel Non-Alkaline Glass Substrate with
Ultra-Low Thermal Shrinkage for Higher Resolution
Active Matrix Displays
A. Koike, M. Nishizawa, H. Tokunaga, J. Akiyama,
T. Tsujimura, K. Hayashi
Asahi Glass, Japan

FMC4 - 3
11:20

Optically Specific Inkjet Inks for Displays
K. Eguchi
JNC Petrochem., JapanJNC has focused on developing inkjet ink for printed electronics. UV
curable type can be used for micro lens of light guide plate byimproving in its optical and adhesive properties. Polyimide ink that canbe cured at low temperature is useful to transparent insulating layer oftouch panel.
FMC4 - 4
11:40

Development of Transparent Adhesive Sheet for
Optical Applications
A. Murakami, T. Nonaka
Nitto Denko, JapanTo respond to demands for larger, thinner, and highly-sensitive
capacitive touchscreen panels, we consider decreasing dielectric
constant of adhesive sheets effective. Noticing that controlling electricalcharacteristics of adhesive sheets for interlayer adhesion to decrease
the dielectric constant can contribute to meeting such demands, wedeveloped a low dielectric adhesive sheet.
----- Lunch -----IDW Best Paper AwardIDW Outstanding
Poster Paper Award
These awards will go to the most outstanding papers
selected from those presented at IDW ’13.
The 2013 award winners will be announced on the
IDW website: http://www.idw.ne.jp/award.html
91

FMC

A novel non-alkaline glass substrate for higher resolution active matrix
displays was newly developed. The new glass substrate “AN Wizus”
showed ultra-low thermal shrinkage due to its manufacturing process
and glass composition. This glass also had advantages of higher
sliming rate, lower sag and lower photoelastic constant.

Thursday

December 5

13:30 - 14:30

Main Hall A

FMC5/FLX1: Flexible Materials
Chair:
Co-Chair:Y. Mizushima, Corning, Japan
M. Kimura, Nagaoka Univ. of Tech., Japan

FMC5/
FLX1 - 1:
13:30

Invited Highly Transparent and Conductive Carbon
Nanotube Film on Plastic: Cellulose-Assisted Film
Deposition Followed by Solution and Photonic
Processing
Y. Kim, Y. Yokota, S. Shimada, R. Azumi, T. Saito,
N. Minami
AIST, Japan

Carbon nanotube transparent conductive ﬁlm can be manufactured
through a resource- and energy-saving solution process able toproduce a ﬁlm at room temperature without vacuum or hightemperature processes. The developed carbon nanotube thin ﬁlm
achieves sheet resistance of 68 - 240 Ω/sq at transmittance of 89 - 98%.
FMC5/
FLX1 - 2:
13:50

Invited Challenges toward Reliable Evaluation ofHigh Water Barrier Property
S. Hara*,**, A. Suzuki**, H. Takahagi***AIST, Japan**CEREBA, Japan

Reference ﬁlms with 10­2 - 10­4 g/m2/day in water vapor transmission
rate (WVTR) were developed. Using them, consistency between two
WVTR measurement systems was successfully achieved to 10­4 g/m2/
day level. Furthermore, CEREBAʼs strategy to achieve a reliable WVTR
evaluation technology to 10­6 g/m2/day is presented.
FMC5/
FLX1 - 3:
14:10

Invited Novel Materials for Printable Electronics
Y. Ikeda*, T. Imamura*, Y. Tomizawa*, T. Shiro*,***Teijin, Japan**NanoGram, USA

Si nanoparticles are novel materials for printed electronics. In thisstudy, we demonstrate the carrier injection process and semiconductor
layer prepared via laser irradiation of Si nanoparticle ﬁlm for use insilicon-based FETs. Moreover, SiO2 dielectric layer andphotoluminescence treated Si nanoparticles with application in FPDs
and LEDs are introduced.
----- Break -----

92

Thursday

December 5

15:10 - 16:30

Mid-sized Hall A

FMC6: Optical Films
T. Ishinabe, Tohoku Univ., Japan
I. Amimori, A51 Tech, Japan

FMC6 - 1
15:10

Analysis of 3D Viewing Angle Characteristics forFilm Type Patterned Retarder Panel Using Extended
Jones Calculus
H.-H. Son*,**, J.-U. Park*, W.-N. Jeong*, K.-M. Lim*,K. Oh***LG Display, Korea**Yonsei Univ., Korea

We provided an analytical solution for 3D viewing angle of FPR panel
using an extended Jones calculus. The shape of 3D crosstalk was
predicted, which showed a good agreement with experimental results.
We found the retardation in the base ﬁlm widened the horizontal
viewing angle and suggested its optimum value.
FMC6 - 2
15:30

Novel Film Patterned Retarder for Improving
Viewing Angle Properties in 3D-LCDs
K. Takada, T. Otani, M. Nakao, K. Ohmuro, K. Amemiya,
R. Goto, A. Matsumoto, T. Katagiri, H. Kagawa, Y. Suga,
Y. Ito
FUJIFILM, Japan

We have successfully developed a novel FPR that combines a layer ofvertically aligned polymerized discotic material and a triacetate
cellulose ﬁlm. It reduces oblique crosstalk in 3D-LCDs. This FPR has
wide viewing angle, can be manufactured by a roll-to-roll process, andforms narrow-width boundaries between the patterned line.
FMC6 - 3
15:50

Analysis of Grayscale Inversion and Image Quality
Improvement of TN-LCDs Using New Wide View Film
H. Sato, A. Yamamoto, Y. Yanai, Y. Saitoh, T. Arai, Y. Ito
FUJIFILM, Japan

We have developed a new Wide View ﬁlm for TN-LCDs that
dramatically improves grayscale inversion. We elucidated the grayscale
inversion mechanism of TN-LCDs with a new polarization analysis
method. This new TN-LCD is suitable for mobile applications that
require a wide range of viewing angles and low power consumption.

93

FMC

Chair:
Co-Chair:Thursday
FMC6 - 4
16:10

December 5
Ellipsoidal Light Diffusing Film by Controlling
Collimation Angle of UV Irradiation
B. Katagiri, K. Kusama, T. Orui, S. Shoshi
Lintec, Japan

Optical diffuser ﬁlms with a microstructured refractive index arepromising materials for applications, because of their unique optical
diffusion properties. In this study, we describe an ultraviolet (UV)
irradiation process for photo-polymerization and report ellipsoidal
optical diffuser ﬁlms by controlling the angle of incidence of the UV
light.
----- Break ----16:50 - 18:10

Mid-sized Hall A

FMC7: Manufacturing
Chair:
Co-Chair:R. Hattori, Kyushu Univ., Japan
T. Arikado, Tokyo Electron, Japan

FMC7 - 1:
16:50

Invited Printing and Coating Technologies for
Organic Electron Devices
H. Okada, S. Naka
Univ. of Toyama, Japan

Various printing and coating technologies of organic electron devices
are presented. Using IJP, OLEDs without bank formation are done. Bylaminating two substrates, double-faced emission panel has realized.
By coating Ag nano-particle, all-organic self-alignment TFTs havefabricated. A sheet-type scanner integrated with OLED, FET, and IJP
organic photodiode has demonstrated.
FMC7 - 2:
17:10

Invited Wireless Power Transmitting System for
Mobile Devices
R. Hattori, K. Miyamoto, H. Kanaya, S. Tsukamoto,
H. Ishinishi*
Kyushu Univ., Japan*Network Appl. Eng. Lab., Japan

We present three types of wireless power transmission systems formobile devices using inductive and capacitive coupling and a radio
wave. Capacitive coupling provides a wider reception area than
inductive coupling. A radio wave receiving type system has a longer
transmission distance than the others; however, it has lower efﬁciency.

94

Thu./Fri.

December 5/6

FMC7 - 3
17:30

Influence of Heating on the Direct Imprinting of ZrO2
and an Idea to Improve Heating Condition for HighThroughput
K. Fukada*, H. Koyama*,**, S. Inoue*, T. Shimoda*,****JAIST, Japan**Toppan Printing, Japan***JST-ERATO, Japan

FMC7 - 4
17:50

Single Crystalline ZnO Nanorods Fabricated by Mist
Chemical Vapor Deposition for Optical Applications
C. Li, X. Li, D. Wang, T. Kawaharumura, M. Furuta,
A. Hatta
Kochi Univ. of Tech., Japan

Single-crystallite ZnO nanorods were fabricated by a novel mist
chemical vapor deposition method in argon gas followed a reducing
annealing process. It was found that the morphology of ZnO nanorods
can be easily controlled, as well as the intensity of UV peak wasenhanced with the Mist CVD process.
Author Interviews and Demonstrations
18:30 – 19:10

Friday, December 6
9:00 - 12:00

Main Hall C

Poster FMCp: FPD Manufacturing, Materials & Components
FMCp - 1

Evaluations of Reduced Graphene Oxide and Nano
Graphene for Printable Transparent Conductors
M. Hasegawa, Y. Hirayama
Merck, Japan

Sheet resistances and transmission spectra of reduced graphene oxide(RGO) and nano graphene compiled sheets were evaluated forprintable transparent conductors. A relation between graphene ﬂake
size of RGO and sheet resistance was determined. The sheet
resistance of RGO, which has compatible transmittance with ITO, was
two-order larger.

95

FMC

We simulated the thermal conduction of a roll-to-sheet imprinting
system. ZrO2 gel ﬁlms were patterned on large-scale substrates byusing the system with direct thermal imprinting. To improve the systemʼsthroughput, we invented a preheater mechanism being incorporated
into the roll-to-sheet system.

Friday
FMCp - 2

December 6
Transparent Polyimides with Low Coefficient ofThermal Expansion and Low Birefringence for
Flexible Display
M. Okazaki, K. Fukukawa, T. Urakami, Y. Sakata,
A. Okubo
Mitsui Chems., Japan

Low CTE transparent polyimdes (TPIs) with low birefringence havebeen developed. There are many requirements in transparent ﬁlm toreplace glass substrate. Although it is well-known the relationshipbetween CTE and birefringence is trade-off, our new TPIs could
improve the CTE and birefringence by copolymerization ofcharacteristic monomers.
FMCp - 3

Low Thermal Shrinkage Glass Substrate for HighDefinition Display
M. Hayashi, S. Miwa, M. Ohji
Nippon Elec. Glass, Japan

Low thermal shrinkage glass substrate, OA-12, has been developed.
Since OA-12 shows 1/3 lower shrinkage than our conventional glass
substrate, OA-10G for LCD, this glass is suitable for the hightemperature manufacturing process for high deﬁnition display with low
temperature poly-silicon (LTPS) or oxide TFTs.
FMCp - 4

Refractive Index Control by Siloxane/Nano Particle
HybridN. Yoshida, Y. Tashiro, T. Nonaka
AZ Elect. Materials Manufacturing Japan, Japan

We succeeded in development of siloxane-particle hybrid materials by
new synthesis method. Here we demonstrate synthesis method andﬁlm properties of siloxane-metal oxide hybrid polymer, which has highrefractive index (RI). In addition, we propose new air gap material withlower RI with this technique.
FMCp - 5

A Novel Primer for Cycloolefin Polymer with Strong
Adhesion and High Durability
T. Yamate, K. Kumazawa, S. Yamada, H. Suzuki
Nippon Soda, JapanA primer, which connects functional materials to plastic ﬁlm, is used in
ﬂexible electronic devices. There is a strong demand for a primer which
can adhere strongly to the COP ﬁlms. We developed a primer whichshowed strong adhesion against COP ﬁlms, high refractive index andhigh durability.

96Friday

December 6

FMCp - 6

Materials Design for High-Resolution Performanceof Resin Black Matrix at the 6th Generation Color
Filters Mass Production
C. H. Park, Y. S. Na, M. C. Sakong, M. S. Kwak,
M. W. Nam, S. J. Yu, K. D. Jeong
LG Display, Korea

FMCp - 7

Withdrawn

FMCp - 8

Roll-to-Roll Deposition on 100 mm Thick Flexible
Glass Substrate
H. Tamagaki, Y. Ikari, N. Ohba
Kobe Steel, Japan

Successful roll-to-roll sputter deposition of ITO on a ﬂexible glass roll
100 µm thick, 300 mm wide and 50 m long was demonstrated using acompact sputter roll-coater with some modiﬁcations for the ﬂexible
glass handling. ITO ﬁlm with 100 ΩSq sheet resistance and 90% lighttransmission was obtained.
FMCp - 9

Metal Oxide Thin Films with Excellent Step
Coverage Achieved by Pyrosol Process
S. Kodama, K. Arai, T. Oashi, Y. Seta, K. Ogawa,S. Yamada, H. Suzuki
Nippon Soda, Japan

Pyrosol Process is one of the Chemical Vapor Deposition (CVD)methods, which allow formation of metal oxide thin ﬁlm possessing
distinctive features. We recently discovered that this method can beapplied to substrates with ﬁne three-dimensional patterns and result information of metal oxide ﬁlms with high step coverage.

IDW ’14The 21st International Display Workshops
December 3 – 5, 2014
Toki Messe Niigata Convention Center
Niigata, Japan
http://www.idw.ne.jp
97

FMC

The materials performance of the extreme resolution was highsensitivity of Photoinitiator and Hard bake Temperature Tg value ofbinder polymers. We Designed HR-RBM of high sensitivity (35 mJ/cm2)& good straightness (1.9 µm L/S). It was demonstration of highresolution at 2.4 µm pattern at the 6th generation LCD Plant.

Friday
FMCp - 10

December 6
Improvement of Stamping Mura for Overcoat Layer
and Column Spacer Fabricated by Imprint
Lithography
H.-S. Cho, D. Kwon, D.-H. Jang, Y.-S. Choi, S.-H. Jeon
LG Display, Korea

We investigated the improvement of stamping mura for overcoat layer
and column spacer fabricated by imprint process. The mura wasaffected stage surface and mold dropping method. The mura was
improved by air-ﬂoating technology and optimized dropping method.
FMCp - 11

Development of High Optical Density Black Column
Space for Black Matrix-Less Color Filter on TFT
Y. Na, Y. Kim, C. Park, M. Kwak, D. Kang, Y. Choi,
S. JeonLG Display, Korea

BCS must have to implement a high Optical Density (OD) & ΔH
properties at the same time. ΔH refers to the difference in thickness
Push and Gap CS. To improve ΔH we was optimized the transmittancespectrum of the pigment in high optical density (1.0/µm).
FMCp - 12

Optimization of Heat Treatment Profile Prior to Low
Temperature Poly-Si TFT Fabrication Process
J. Akiyama, K. Hayashi, M. Nishizawa, A. Koike
Asahi Glass, JapanWe evaluated quantitatively the degree of thermal shrinkage of analkali-free aluminosilicate glass substrate by establishing a numericalsimulation model on structural relaxation phenomena of glassmaterials. The appropriate thermal proﬁle of glass manufacturing
process and Low Temperature Poly-Si TFT allay fabrication process
was investigated.
FMCp - 13

Triple-View and Secure Dual-View Display by Use ofThree-Layered LCD Panels
K. Uchida, S. Suyama, H. Yamamoto
Univ. of Tokushima, Japan

We have realized a new triple-view display with multiple functions,
including horizontal triple views, vertical and horizontal triple views, andsecure dual views. The proposed display is composed of three liquidcrystal display (LCD) panels. The multiple-views depending on theviewersʼ positions are generated by information sharing between the
LCDs.

98

Friday
FMCp - 14

December 6
A Reversed Gaussian-Like Algorithm for Reducing
Mask Spliced Mura on 110-in. TFT LCD
Y.-Y. Chen, Y.-H. Chen, X. Tan, L. Sun, W. Chen
Shenzhen China Star Optoelect. Tech., China

FMCp - 15

Effect of Anneal Temperature on Local Structures of
In-Ga-Zn-O Films Evaluated by X-ray Absorption
Fine Structure Analysis
S. Yasuno, M. Inaba, S. Kosaka, S. Morita*, A. Hino*,
K. Hayashi*, T. Kugimiya*, Y. Taniguchi**, I. Hirosawa**
Kobelco Res. Inst., Japan*Kobe Steel, Japan**JASRI, Japan

X-ray absorption ﬁne structure analysis was applied to evaluate theeffect of anneal temperature on local structure of In-Ga-Zn-O ﬁlms. It
was found that the coordination numbers of oxygen around In and Zn
atoms increased with increasing anneal temperature. In contrast, thataround Ga atoms varied only slightly with temperature.
FMCp - 16

Withdrawn

FMCp - 17

Full High Definition Mobile Phone Screen Based on
a-Si TFT Technology
C. Yan, K. Lu, Z. Xie, J. Guo, X. Chen, W. Wang, T. Y. Min,
X. Dong, D. Sha, J. Zhang, X. Chen, L. Shi, Y. Xue,
W. Zhang, S. Xu, T. Li, Z. Tian, J. Li, H. Xiao, G. Zhang
BOE Optoelect. Tech., China

With the wing pattern technology and resin passivation layer, a morethan 400 ppi LCD using a-Si TFT has been developed. The power
consumption of a-Si devices is comparable to or even lowers thanthose of present LTPS. In this paper, we will show the technology formaking FHD LCD.
FMCp - 18

Designing of Side Emitting Lens for Slim Direct LED
Back Light Unit
S. Park, J. Seo, G. Kim
Samsung Display, Korea

The light extraction efﬁciency of side emitting lens was simulated. The
amount of light reaching the bottom and side detectors of LUXEON
was 52.62%. We developed a new design lens with an extraction
efﬁciency of 81.13%, thereby improving the performance by 154%
compared to that of LUXEON.

99

FMC

China Star has successfully developed the world largest 110-in. LCD
by the mask stitching method due to the limitation of the mask size.
However, mura is a major issue which caused by the mask stitchingprocess. We propose a reversed Gaussian-like algorithm tocompensate this mura phenomenon.

Friday
FMCp - 19

December 6
Fiber Optic Illuminator Using Recycling Light
Technology for Signage Applications
K. Li
Wavien, USA

A single color and a multi-color ﬁber optic illumination system using
single white LED and RGBW LEDs respectively, powered by Wavienʼs
Recycling Light Technology (RLT) systems will be described. The multicolor system will open up many applications where this capability is notavailable using neon tubes or linear LED arrays.
FMCp - 20

Efficient LED Hard Edge Spot Light Using Recycling
Light Technology
K. Li
Wavien, USA

A hard-edge LED spot light for PAR and MR lamps using Wavien RLTtechnology are described. These TruSpot LED spot light also accept
GOBO image slides so that it can be used to project advertising
images. The RLT technology allows up to 280% improvement inbrightness over standard optical conﬁgurations.
FMCp - 21

The Design of High Efficiency Light-Guide
Plate with Multi Step Wedge Structure
Y. W. Chang
AU Optronics, Taiwan

We successfully release a multi steps wedge design which is better
than AUO published in 2012. According to our research, we divide thewedge structure into two parts due to different functions. We do
improve the wedge structure to be processed more easily, better
performance and more stable.
FMCp - 22

Surface Diffusing System LCDs with Small Viewing
Angle Dependence of Contrast Ratio and Color Shift
N. Munemura, D. Sekine, A. Tagaya, Y. Koike
Keio Univ., Japan

We fabricated the scattering ﬁlm to realize wide luminance angular
distribution liquid crystal display with surface diffusing system based on
the novel multiple light scattering simulation. With this scattering ﬁlm,
we demonstrated the surface diffusing system liquid crystal display withsmall viewing angle dependence of contrast ratio and color shift.

100Friday
FMCp - 23

December 6
Thin Seamless LED Flat Lighting Panel Using Highly
Scattered Optical Transmission Polymer
K. Mochizuki, K. Sakurai, T. Iwamoto, K. Oosumi,
Y. Shinohara, A. Tagaya*, Y. Koike*
Nittoh Kogaku, Japan*Keio Univ., Japan

FMCp - 24L Characterization of SiO2/In-Ga-Zn-O Interface byHard X-ray Photoelectron Spectroscopy and X-ray
Reflectometry
I. Hirosawa*, Y. Taniguchi*,**, Y.-T. Cui*, H. Oji*,***JASRI, Japan**SPring-8 Service, Japan

Non-destructive investigation on interface structures between SiO2 andoxide semiconductor In-Ga-Zn-O (IGZO) was performed by X-ray
reﬂectometry and hard X-ray photoelectron spectroscopy (HAXPES),
and suggested that chemical reactions forming silicide occurred
between SiO2 and IGZO. HAXPES signals of silicide depended on SiO2
deposition condition.
FMCp - 25L Organic Conducting Polypyrrole-Silica Inks
T. Sugiura, S. Maeda
Tokai Univ., Japan
We have prepared organic conducting nanocomposite inks which
utilize polypyrrole as conducting parts and small silica particles as
dispersants. These polypyrrole-silica nanocomposites can be utilize as
inkjet inks for printed electronics due to their colloid stabilities andelectric properties.
FMCp - 26L Carrier Injection by Laser Doping of Doped Silicon
Nanoparticles in Silicon Field Effect Transistor for
Plastic Electronics
T. Imamura*, Y. Ikeda*, Y. Tomizawa*, T. Daidou*,
T. Shiro*,***Teijin, Japan**NanoGram, USA

Si nanoparticles (SiNPs) were developed by laser pyrolysis method.
Laser doping (LD) of doped SiNPs was applied for carrier injection
process of Si ﬁeld effect transistors (FETs). We demonstrated a top
gate top contact FET on crystalline Si by LD.

101

FMC

We have developed a thin seamless LED ﬂat lighting panel (Seamless
Panel) using a highly scattered optical transmission polymer. The
Seamless Panels can be connected without showing seams on thelighting surface. The Seamless Panel gives more ﬂexibility to design
various illumination systems.

Friday

December 6

FMCp - 27L Flaw Inspection and Detection for Small-Pixel
TFT-Array
Y. C. Wang, B. S. Lin, J. Hsu*
Nat. Chiao Tung Univ., Taiwan*ITRI, Taiwan
The display pixels on array process are getting smaller for advanced
display applications. The paper proposed the method of voltage
imaging for detection and resulted in small- pixel TFT array between
the ﬂaw detection performances and played an important role thanpreviously in non-small pixel TFT array for managing yield.
FMCp - 28L Effects of Annealing Temperatures and Substrateon Properties of ZnO Nanorods
K. Utashiro, T. Umakoshi, Y. Abe, M. Kawamura,
K. H. Kim
Kitami Inst. of Tech., Japan
The properties of ZnO nanorods are investigated at different annealing
temperature and substrates. Within a certain range of annealing
temperatures, the alignment and length of nanorods are gradually
improved with increasing annealing temperature of seed layer.
However, it shows no signiﬁcant difference for growth of nanorods on
two different substrates.
FMCp - 29L Improving Crystalline Quality of Si Thin Films
Solid-Phase Crystallized on Yttria-Stablized Zirconia
Layers by Pulse Laser
L. T. K. Mai, S. Horita
JAIST, JapanA new two-steps irradiation method has been proposed to improve
SPC Si ﬁlm quality on YSZ layer for short annealing time by pulse laser.
Firstly, a-Si ﬁlms were irradiated at low energy to generate nuclei,
following by irradiation at high energy to accelerate nuclei growth andﬁlms crystallization.
FMCp - 30L The Effects of Birefringent Fiber Content and theDifference in Refractive Indices of the Constituent
Components on the Optical Properties of Isotropic
Polymer Diffuser Sheet
T. Kim, E. S. Lee, W. Y. Jeong, D. Y. Lim
KIST, Korea
A novel diffuser comprising birefringent ﬁbers and an isotropic polymer
matrix was fabricated. The diffusing behavior showed a dependency on
the ﬁber content and the difference in refractive indices of theconstituent components. As the ﬁber content and the difference inrefractive indices were increased, enhanced haze characteristics wereshown.

102

Friday

December 6

FMCp - 31L Roll-to-Roll Fabricated Self-Alignment
Microstructure Film for Improving the Viewing-Angle
Characteristics of LCD
Y. Asaoka, T. Kanno, D. Shinozaki, S. Ochi, S. Katsuta,
E. Yamamoto, T. Maeda, Y. Tsuda, Y. Shimada
Sharp, Japan

FMCp - 32L Adaptive Solar Illuminating Conduction
Components with Helios Orbital Segmented Tracingfor LCD Window Display
C.-J. Ou, C. H. Lin, C.-W. Lin*, B.-W. Lee*
Hsiuping Univ. of S&T, Taiwan*Big-Sun Energy Group, Taiwan
Application of the solar illuminating techniques is adopt for LCD display.
Prototype veriﬁed the possibilities and feasibilities of the concept.
Requirement on the display performance is discussed. This concept
provides a method to transform the window into the display platform,
increase the market of the present display technologies.

FMCp - 33L Novel Four-Mask Process Using Copper Metal withITO Buffer Layer in ADSDS TFT-LCD
S. J. Choi, Y. J. Song*, J. Niu, J. H. Kim*, B. K. Jung*,
Z. F. Cao, F. Z. Zhang, S. Sun, G. B. Hui, J. S. Xue
BOE Tech. Group, China*BOE Display Tech., China
In this paper, we have successfully developed novel four-mask processusing copper with ITO buffer layer in ADSDS structure. The key
process is no metal buffer structure under Cu layer and one-step etch
process about gate electrode and common electrode. These processes
are able to simplify process of 0+4Mask and improve the productivity.

----- Lunch -----

103

FMC

A novel microstructure ﬁlm, which has no backscatter of the ambient
light, has been fabricated by the roll-to-roll self-alignment
photolithography for mass-productivity. The microstructures of the ﬁlm
are optimized to improve the viewing-angle characteristics of the TNLCD by controlling the photolithography conditions of the transparent
photoresist.

Friday

December 6

13:30 - 15:05

Main Hall A

FMC8: Lighting Technologies
Special Topics of Interest on Lighting Technologies
Chair:
Co-Chair:

K. Käläntär, Global Optical Solutions, JapanY. Yang, Japan Display, Japan

FMC8 - 1
13:30

Quantum Dot Enhancement of Color for LCD
SystemsJ. V. Derlofske, G. Benoit, A. Lathrop, D. Lamb
3M, USA

Quantum dot technology promises to signiﬁcantly extend the color
gamut of liquid crystal displays (LCDs). Used in a ﬁlm format, quantum
dots can produce large color gamuts (>96% NTSC) with high efﬁciency.
This paper discusses how quantum dots are incorporated into an LCD
system and the factors that dictate performance.
FMC8 - 2
13:50

New LED Design Concept for High Color Gamut
Application
S. J. Chang
AU Optronics, Taiwan

This new type LED is including two-types LED and controlling current
ratio by the feedback of signal in LCD. During to dynamic control LED
current ratio, pictures on display can be more brightness or colorful. It
can solve unbalance of brightness and color by using signal lightsource.
FMC8 - 3
14:10

Switchable Dual Directional Backlight for Energy
Saving in Automotive Displays
A. Yuuki, K. Itoga, T. Satake
Mitsubishi Elec., Japan

We have developed a switchable dual directional backlight for LCDs in
the center console of automobiles. The backlight can change theluminance ratio between the driver's direction and the co-driver's
direction, without degrading the luminance and its uniformity. It cansave 30% of the lighting energy in solo drive.
FMC8 - 4
14:30

Optical Characteristics of Directional Backlight Unit
for Field-Alternative Full Resolution AutoStereoscopic 3D LCD
K. Käläntär
Global Optical Solutions, Japan

In this paper the design and the structure of the directional BLUs usedin recent ﬁeld alternative 3D auto-stereoscopic full resolution medium
size LCDs are explained and the constraints of the design for LGP andlight deﬂecting ﬁlm have been clariﬁed for a BLU diagonal size of
180.34 mm.

104

Friday

December 6

FMC8 - 5L
14:50

Optical Design of Novel Microstructure Film for
Wide Viewing TN-LCD
S. Katsuta, H. Yui, Y. Asaoka, E. Yamamoto, T. Maeda,
T. Kamada, Y. Tsuda
Sharp, Japan

Author Interviews and Demonstrations
16:40 – 17:20
Supporting Organizations:Japan Electronics Packaging and Circuits Association
Japan Society of Colour Material
RadTech JapanThe Japanese Research Association for Organic Electronics Materials
The Japanese Society of Printing Science and Technology
The Society of Photography and Imaging of JapanThe Technical Association of Photopolymers, JapanThe 20th Anniversary Session“Past, Present and Futureof Display Technology”
by FMC Workshopannisa
ver ryth

20

IDW

Wednesday, December 4, 2013
14:00 – 17:00 (FMC1 & FMC2)
Main Hall A, 1F
See page 87-89 for details–The 20th Anniversary– Keynote & Special Session“What’s the Next Display?”
by LCT Workshop
A future manufacturing technologies
and newly developed LCD panels will bepresented.
Wednesday, December 4, 2013
14:00 – 16:30 (LCT1 & LCT2)
th20
Mid-sized Hall A, 1F
IDW
See page 47-48 for details

anni

sa
ver ry105

FMC

A novel wide viewing ﬁlm, which contains air micro-cavities in thepolymer layer, has been developed. By designing the three dimensional
shape of the cavities to optimize the ﬁlm for TN-LCD, the grayscale
inversion of TN-LCD is improved and the contrast ratio is over 10:1 inall directions.

Wednesday

December 4Workshop on Plasma Displays
Wednesday, December 4
14:00 - 15:15

Meeting Room 206

PDP1: Advanced Materials and Discharge
Chair:
Co-Chair:L. F. Weber, Consultant, USA
M. Uchidoi, Japan

PDP1 - 1:
14:00

Invited Development of Graphene Coated Cu
Powders for BUS Electrodes of AC PDPs
Y.-K. Ko, H.-R. Choi, Y.-S. Kim
Hongik Univ., Korea

CVD coating of graphene layer on copper powder was attempted to
explore a possibility of replacing Ag powder in BUS electrodes of AC
PDPs. The results indicate that graphene layers can be formed on
copper powder and the graphene layer improves the oxidation
resistance dramatically, demonstrating the possibility.
PDP1 - 2:
14:20

Invited Development of the Second Generation
Calcium Magnesium Oxide Protective Layer for High
Luminous Efficacy PDP
Q. F. Yan, K. Kotera, H. Liu, H. Zhou, H. Zhao, X. Deng,
P. Wang
Sichuan COC Display Devices, China

New combination layer of CaxMg1-xO(CMO) protecting layer andpriming booster layer (PBL) were developed to adopt higher Xe content
for high luminous efﬁcacy PDP. New evacuation process allows
signiﬁcant reducing the impact of carbonate formation, over 25%
increase of luminous efﬁcacy has been achieved in the 2nd generation
CMO panel.
PDP1 - 3
14:40

Computational Study on Influence of N2 Addition on
Discharge Characteristics of AC PDPs in Xe/Ne Gas
MixtureA. Oda, Y. Hirano*, K. Ishii*
Chiba Inst. of Tech., Japan*NHK, Japan

1-D ﬂuid simulation of plasma display panel (PDP) discharges in Ne/
Xe/N2 has been performed, in order to clarify the inﬂuence of N2
addition on the discharge characteristics. Our simulations reveal that adelay time of voltage and current began to appear in case of N2
addition more than 100 ppm.

106

Wednesday
PDP1 - 4L
15:00

December 4Electron Traps Formed by Photochromic Transitionof ZnSiO Nanoparticle
H. Kajiyama*, Y. Matsuura*, H. Tanaka*, A. Otomo**,
S. Inoue**, K. Takata***, K. Uchino*****Tokushima Bunri Univ., Japan**Hiroshima Univ., Japan***Kansai Univ., Japan****Kyushu Univ., Japan----- Break ----15:50 - 17:00

Meeting Room 206

PDP2: Large Screen and Discharge Applications
Chair:
Co-Chair:Y.-S. Kim, Hongik Univ., Korea
H. Kajiyama, Tokushima Bunri Univ., Japan

PDP2 - 3L
15:50

Application of AC Plasma Display Panels to
Radiation Detectors
Y. Shintani, M. Murata, R. Murai
Panasonic, JapanAC plasma display panels (AC-PDPs) whose cell structures, gas
contents, and waveforms are adapted for radiation detectors. X-rays
induce electron emission into discharge gas, resulting in electron
avalanche and charge accumulation on dielectrics. The radiation dose
rate of X-rays is measured as a breakdown voltage shift between
anode and cathode.
PDP2 - 4L
16:05

Address While Display Method with Grouped
Subfield Arrangement for Increasing Light Emission
Duty Ratio of UHD PDPs
Y. Saito, K. Komatsu, T. Shiga
Univ. of Electro-Commun., Japan

Horizontal lines are divided into 4 groups having different subﬁeld
arrangement and display period is initiated immediately after
addressing. With 8K4K, 6 subﬁelds, dual scan mode, light emission
duty ratio is increased from 13% with ADS method to 25% whenaddress interval is 1 µs.

107

PDP

We report on a photochromic transition of ZnSiO nanoparticles. It isconﬁrmed that a photochromic transition occurs in the ZnSiO
nanoparticles with UV irradiation at 300 K. This indicates that electrons
are excited to the stable trap states in ZnSiO formed as a result of aphoto-induced structural change.

Wednesday
PDP2 - 1:
16:20

December 4

Invited Reproduction of 22.2 Multichannel Sound
with FPD-Integrated Loudspeakers for Home UseK. Matsui, S. Oishi, S. Oode, T. Sugimoto, Y. Nakayama,
H. Okubo, A. Ando, H. Sato*, K. Mizuno*, Y. Morita*
NHK, Japan*Foster Elec., JapanNHK is in the process of developing a 22.2 multichannel sound system
for Super Hi-Vision, an ultra high-deﬁnition TV. This article gives an
overview of 22.2 multichannel sound and its binaural reproduction withmultiple loudspeakers integrated into a ﬂat panel display.
PDP2 - 2:
16:40

Invited Development of Super-Large-Area Film
Display with LAFi Technology
K. Shinohe, T. Hidaka, T. Kosako, H. Hirakawa,
K. Awamoto, T. Shinoda
Shinoda Plasma, Japan

Ambient display needs ﬂexibility while it is very attractive. In order torealize ﬂexible display set, thoroughly we changed arrangement ofcircuit boards and LAFi structure. In result, really ﬂexible display set isachieved. It is very easy to install on curved wall and pillars.
Author Interviews and Demonstrations
17:20 – 18:00
Sponsor:Plasma Display Technical Meeting

The 20th Anniversary Exhibition
12:40 - 18:00 Wednesday, Dec. 4, 2013
10:00 - 18:00 Thursday, Dec. 5, 2013
10:00 - 14:00 Friday, Dec. 6, 2013anni

saver ry

108

th

20

IDW

Room 108, 1F
Sapporo Convention Center

Thursday

December 5

Workshop on
EL Displays and Phosphors
Thursday, December 5
9:00 - 12:00

Main Hall C

Poster PHp: Phosphors
PHp - 1

Characteristics of SrTiO3 or TiO2 Dispersed
Dielectric Layer for Powder EL Devices
K. Wani, T. Kanda, E. Hashimoto
TAZMO, Japan

PHp - 2

Laser Etched AC Electroluminescent Lamps
J. Silver, G. R. Fern, P. G. Harris
Brunel Univ., UK

Highly ﬂexible AC electroluminescent display panels were prepared byﬁrst using a laser etching process to produce electrode structures onan aluminium covered polymer ﬁlm substrate, then screen printing asingle binder layer (containing the ACEL phosphor powder and thebarium titanate ferroelectric particles) before overprinting withtransparent conducting electrode.
PHp - 3

Factors Affecting the Colour of the Green Emitting
Phosphors in the System Sr2SiO4-Ba2SiO4 Activatedby Divalent Europium Ions
J. Silver, G. R. Fern, P. J. MarshBrunel Univ., UK

Herein the XRPD data of 13 compositions in (Ba1.98-xSrxEu0.02SiO4)
phosphor materials (x values in the range = 0 to 1.98) have been ﬁtted
in a new detailed approach. That has allowed a full explanation of thesurprising distribution of the CIE coordinates when they are plotted on
the CIE diagram.

109

PH

Characteristics of powder EL with several dielectric materials were
investigated. Powder EL devices using these materials as dielectric
layers with the same capacitance were fabricated. The brightness of
the SrTiO3 or TiO2 devices was still lower than that of the BaTiO3
device. The reason for this difference is discussed.

Thursday
PHp - 4

December 5
Eco-Friendly AC Electroluminescent Lamps II:
Comparison of Biodegradable, Rigid Substrates forElectronics
J. Silver, G. R. Fern, P. G. Harris
Brunel Univ., UK

AC electroluminescent lamps have been fabricated on rigid, woodbased, biodegradable substrates in order to investigate possibilities ofminimising the waste resulting from opto-electronic devices at the endof life. The performance characteristics of these eco-friendly ACEL
lamps have been investigated.
PHp - 5

Femtosecond Laser Irradiation to ZnS Phosphor for
Inorganic Electroluminescent Displays
K. Nabesaka*, Y. Ishikawa*,***, T. Doe*, N. Taguchi**,Y. Hosokawa*, Y. Uraoka*,****Nara Inst. of S&T, Japan**Image Tech, Japan***CREST, Japan

We investigated the effect of femtosecond laser irradiation forenhancing the luminance of ZnS-based electroluminescence devices.
The luminance value was improved due to the effect of femtosecond
laser irradiation. We found that the increasing of the irradiation time andchoosing an optimal power of the laser yielded higher luminance.
PHp - 6

Effect of Manganese on the Crystal Structure of
Colloidal Zinc Sulfide in the Presence of Sodium
Chloride
N. Sergeeva, M. Tsvetkova, A. Abizov, S. BogdanovSaint-Petersburg State Tech. Inst., Russia

The effect of manganese in the presence of sodium chloride, andwithout him on the unit cell dimensions of colloidal zinc sulﬁde withsphalerite structure. It is shown that manganese in the presence of
sodium chloride cubic lattice distorts zinc sulﬁde and decreases
crystallographic symmetry.
PHp - 7

Electroluminescence from DC Biased ZnS:TbF3
Phosphor Layers Having Oxide Semiconductor
K. Yanagihara, N. Miura, H. Matsumoto
Meiji Univ., JapanDC EL devices having oxide semiconductor were proposed. The n-p-nstructure formed with oxide semiconductors were used for current
control. These structures also act as hot electron source undernegative bias. As a p-type material, cupper aluminate was investigated.
Phosphor deposited on the n-p-n structure, stable electroluminescence
was observed.

110Thursday
PHp - 8December 5
Development of ZnO Luminescent Thin Films forElectron Beam Excitation Assisted Optical
Microscope
S. Kanamori*, A. Miyake*,**, W. Inami*,**, H. Kominami*,
Y. Kawata *,**, Y. Nakanishi**Shizuoka Univ., Japan**JST-CREST, Japan

We fabricated ZnO thin ﬁlms on Si3N4 substrate as a luminescent ﬁlmof Electron beam excitation assisted optical (EXA) microscope.
Cathodoluminescence intensity of annealed ﬁlms was enhanced byincreasing annealing temperature. EXA microscope observation image
with annealed at 1000 C could be acquired with high signal to noise
ratio.
PHp - 9Synthesis of Eu3+ Doped Fluoride Phosphors Using
PTFE
H. Mizobuchi, K. Uematsu, S. W. Kim, T. Ishigaki,
K. Toda, M. Sato

Red-emitting Na3AlF6:Eu3+ phosphors were synthesized in a single
phase by solid-state reaction method using polytetraﬂuoroethylene as a
ﬂuoride source. These phosphors exhibited excellent luminescentefﬁciency under excitation at 395 nm. These results indicate that these
phosphors are candidates of ﬂuoride phosphors for near-UV LEDs.
PHp - 10Synthesis and Luminescent Properties of Eu-Doped
Sc-Based Phosphors with Perovskite Related
Structures
Y. Fujita, T. Kunimoto, T. Honma*, M. Mikami**,Y. Shimomura**
Tokushima Bunri Univ., Japan*JASRI, Japan**Mitsubishi Chem., Japan

New Eu-activated phosphors have been discoverd using some Scbased host crystals, which belongs to the perovskite-type structures.
Ba2Sc2O5:Eu, BaScO2F:Eu, and Ba2ScO3F:Eu were synthesized. Eu2+
ions can be activated only in the BaScO2F. The optimum Eu2+
concentration of Sr-substituted BaScO2F is approximately at x = 0.025
by X-ray absorption ﬁne structure measurements.
PHp - 11Synthesis and Luminescence Properties of Novel
Blue-Emitting Sr6(Y,Ce)2Al4O15 Phosphors
Y. Kawano, K. Seki, K. Uematsu, S. W. Kim, T. Ishigaki,
M. Sato, K. Toda
Niigata Univ., Japan

Blue-emitting Sr6Y2Al4O15:Ce3+ phosphors were synthesized in a single
phase form by a conventional solid-state reaction method and theirphotoluminescence
properties
werecharacterized.
The
Sr6Y2Al4O15:Ce3+ phosphors exhibit broad blue emission band assigned
to the transition from 4f05d1 excited state to 4f1 ground state of the Ce3+
ions.
111

PH

Niigata Univ., JapanThursday
PHp - 12

December 5
Study on Luminescence Properties of New
Borogermanate Phosphors
T. Hasegawa, N. Sato, T. Ishigaki, S. W. Kim,
K. Uematsu, K. Toda, M. Sato
Niigata Univ., Japan

Ca3Y3Ge2BO13:Ln3+ (Ln = Eu, Tb and Sm) phosphors were synthesized
by the conventional solid-state reaction method. Eu3+- or Tb3+-doped
Ca3Er3Ge2BO13 phosphors showed strong red or green emission underthe excitation at 254 nm. Sm3+-doped Ca3Er3Ge2BO13 phosphor showed
reddish-orange emission under the excitation at 405 nm.
PHp - 13

Photoluminescence of Perovskite-Type AlkalineEarth Stannates Thin Films Using a Thick Nanosheet
Seed Layer
H. Takashima, K. Ueda*, K. Ikegami
AIST, Japan*Kyushu Inst. of Tech., JapanWe
obtained
the
green
color
photoluminescencein[(Ca0.97Mg0.03)0.98Tb0.02]SnO3 thin ﬁlms. On a glass substrate with theseed layer prepared by spin-coat technique, oriented thin ﬁlms of[(Ca0.97Mg0.03)0.98Tb0.02]SnO3 with sharp and intense emission andtransmittance > 80% have been successfully obtained.
PHp - 14Synthesis of YVO4 Nanophosphors byMicroemulsion-Mediated Solution Method
Y. Yamazaki, A. Ikeguchi, A. Isomae, A. Kato
Nagaoka Univ. of Tech., Japan

YVO4:Eu and YVO4:Bi nanophosphors were synthesized by
microemulsion-mediated solvothermal and polyol methods. YVO4:Bi
nanophosphor with 40 nm particle size without agglomeration was
synthesized by microemulsion-mediated polyol method for the ﬁrst
time. The enlargement of particle size and decrease of PL intensity withlowering synthesis temperature were suppressed by introducing
microemulsion.
PHp - 15

Wavelength Conversion Material Phosphor-Glass
Composites for High Power Solid-State Lighting
N. Fujita, M. Iwao, S. Fujita, M. Ohji
Nippon Elec. Glass, Japan

Phosphor-glass composites, in which phosphors are dispersed, havebeen developed. The phosphor-glass composites are expected as theexcellent wavelength conversion material for high power solid-state
lighting, which have high-humidity resistance, long lifetime andextremely small deviation in emission color.

112Thursday
PHp - 16

December 5
Double-Layered CuInS2/ZnS Quantum Dot-Polymer
Plate-Based High-Color Rendering White LightEmitting DiodeJ.-H. Kim, W.-S. Song, J.-H. Lee, H.-D. Kang, H. Yang
Hongik Univ., Korea

A free-standing double-layered composite plate, consisting of highly
bright orange and greenish-yellow CuInS2 quantum dots (QDs)
embedded in polymeric matrix, is combined with a blue light-emitting
diode (LED). The QD plate-LED exhibits a high color rendering index of
81 and high luminous efﬁcacy of 71.2 lm/W at 20 mA.
PHp - 17

Silica-Embedded Quantum Dot-Based White LED
and Effect of Silica on Device Stability Behavior
W.-S. Song, J.-H. Kim, K.-H. Lee, H.-S. Lee, S.-H. Lee,
H. Yang
Hongik Univ., Korea

PHp - 18

Withdrawn

PHp - 19

A Study on Thermal Characteristics for High PowerLEDs
S. Park, Y. Kim, G. Kim
Samsung Display, Korea

High-power LED was developed with 17 ﬂip-chips performing 1,500
lumens. A mechanism of heat generation was analyzed and proposedfor designing multi-chip LEDs to overcome limitation of 250 degree
Celsius on a window in the LED for the application of backlight units.
PHp - 20L

Improvement of Light Out-Coupling Efficiency by
Coating MgO Nanoparticles in Inorganic TFEL
Devices
S. Kunioka, Y. Itagaki, K. Ohmi
Tottori Univ., Japan

An improvement of light out-coupling efﬁciency has been attempted ininorganic thin ﬁlm electroluminescent (TFEL) devices coated with MgOnanoparticles. The luminance is increased by 1.5 times by coating thenanoparticles.
The technique is effective to easily improve aluminescent efﬁciency especially for large area TFEL devices.

113

PH

Blue-to-yellow light-convertible CuInS2/ZnS quantum dots (QDs) are
synthesized and then embedded into silica phase via a microemulsion.
Bare and silica-embedded QDs are combined, respectively, with a blue
LED for white QD-LED fabrication. These two white QD-LEDs are
identically subjected to the continuous operation and compared withrespect to device stability.

Thursday
PHp - 21L

December 5
Photo-Luminescence from Carbon Nitride Thin
Films Deposited by RF Sputtering Technique
M. Satake, T. Okawa*, K. Itoh, K. Kametomo*,
K. Takarabe*, S. Yamamoto
Ryukoku Univ., Japan*Okayama Univ. of Sci., Japan

Carbon nitride thin ﬁlms were deposited at different RF powers in therange of 10 W to 100 W by radio frequency sputtering. The results ofPL have shown that spectra shifted to blue wavelength by irradiating
He-Cd laser. Content of nitrogen and C-Nsp3 bond increased byirradiating He-Cd laser.
PHp - 22L

Cathodoluminescent Properties of UV Emitting(Zn1-XMgX)Al2O4 Phosphor
T. Ishinaga, H. Kominami, Y. Nakanishi, K. Hara
Shizuoka Univ., Japan

ZnAl2O4 which shows UV emission under EB excitation has been
investigated. The luminescent properties of (Zn1-XMgX)Al2O4 weredrastically changed by ﬁring temperature and Mg-ratio. From the CL
spectra, it is thought that the forbidden-gap became bigger according
to increasing of Mg-ratio. Furthermore, another energy-level wasformed in the phosphor surface.
PHp - 23L

Advanced Microreactor System with Glass Mixer
Cell for Synthesizing Nanophosphors
K. Yamashina, H. Okura*, R. Sakata, R. Komiyama,
H. Miyashita, S.-S. Lee, K. Ohmi
Tottori Univ., Japan*Merck, Japan

A novel microreactor system combining with the Y-branch glass mixer
cell has been proposed. YVO4:Eu,Bi red nanophosphor has beensynthesized with in-situ pH monitoring. Spherical grains having about
50 nm in diameter has been obtained. The internal quantum efﬁciency
is 30% under UV excitation at 300 nm.
PHp - 24L

Effect of Temperature and Chemical Potential ofAnion on Kinetic Growth of Zinc Sulfide Nanocrystal
T. Lee, E. S. Kim, Y. Lee, D. Y. Jeon
KAIST, Korea

A kinetic growth process of ZnS NCs passivated by oleylamine ligands
was studied in this research. Temperature and chemical potential effectof anion on kinetic growth was observed. Morphologies of NCs werechanged by temperature to a shape such as rod, tetrapod, etc. We
discussed them from a growth rate.

114

Thursday
PHp - 25L

December 5
Improve the Stability of Quantum Dots with Silica
and Applying Quantum Dot Film as a New TypeWhite Light Packaging System
I. S. Sohn, W. B. Im
Chonnam Nat. Univ., Korea

For improve quantum dots (QDs) thermal stability, we synthesized
quantum dot embedded silica (QDES). Moreover applying QDES a
white LED (WLED) was fabricated using QDES in thin polymer ﬁlm.
Using remote type packaging system, by stacking yellow phosphor inglass plate and QDES ﬁlm we implemented WLED with high CRI.
----- Lunch ----15:10 - 16:25

Meeting Room 204

PH1: Phosphors & Their Applications (1)T.-M. Chen, Nat. Chiao Tung Univ., Taiwan
R.-J. Xie, NIMS, Japan

PH1 - 1:
15:10

Invited Finding New Eu2+ Doped Phosphors forLight-Emitting Diodes by Computational Chemistry
H. Takaba, R. Matsui
Kogakuin Univ., Japan

Theoretical screening of host materials of Eu2+ doped phosphor
suitable for LED from more than 8900 oxide structures was carried out
by computational chemistry techniques. Predicted result of emission
wavelength and efﬁciency was analyzed with test calculations forconventional phosphors to check the validity of the screening method.
PH1 - 2:
15:35

Invited Valence Estimation and Local Structure
Analysis of Luminescence Centers in Phosphor
Materials by X-ray Absorption Spectroscopy
T. Honma, T. Kunimoto*, K. Ohmi**
JASRI, Japan*Tokushima Bunri Univ., Japan**Tottori Univ., Japan

We have reviewed the XAFS studies on BaMgAl10O17:Eu, CuAlS2:Mn
and Y3Al5O12:Ce phosphors using transmission, ﬂuorescence yield andconversion electron yield detection. The valence states and local
structures of luminescent centers investigated by XAFS measurements
will be compared with the luminescent properties of the phosphor
materials in detail.

115

PH

Chair:
Co-Chair:Thursday
PH1 - 3:
16:00

December 5
Invited High Resolution Optical Microscopy with
Nanometric Light Source Excited with Electron
Beam
Y. Kawata*,**, Y. Nawa*, S. Kanamori*, A. Miyake*,**,
W. Inami*,**, Y. Nakanishi**Shizuoka Univ., Japan**JST-CREST, Japan

We have developed electron beam excitation assisted optical
microscope, and demonstrated its resolution higher than 50 nm. A lightsource in a few nanometers size is excited by focused electron beam ina luminescent ﬁlm. The microscope makes it possible to observe living
biological specimens in various surroundings.
----- Break ----16:50 - 18:20

Meeting Room 204

PH2: Phosphors & Their Applications (2)Chair:
Co-Chair:J. Silver, Brunel Univ., UK
K. Ohmi, Tottori Univ., JapanPH2 - 1:
16:50

Invited A Phosphor Sheet Providing Wider Color
Gamut for LCDs and the Backlight System Using It
Y. Ito, T. Hori, T. Kusunoki, H. Nomura, H. Kondo
Dexerials, JapanA phosphor sheet providing wider color gamut and having a simple
structure with an aluminum ﬁlm edge-seal was developed. Employing
blue LEDs with spherical encapsulates can provide the backlight withhigher brightness as well as wider color gamut. Sufﬁcient reliability of it
was also shown.
PH2 - 2:
17:15

Invited Photoluminescent Quantum Dots in Display
Products
S. Coe-Sullivan, W. Liu, P. Allen, J. S. Steckel
QD Vision, USA

In all geometries, QD LCDs will provide the broadest available color
gamut to the user, in addition to potential beneﬁts in power efﬁciency,
brightness, and contrast. This work will compare and contrast the three
primary geometries that will likely be explored during the pursuit of apotentially dominant design.
PH2 - 3:
17:40

Invited A Novel Light Source for Projection Display
Y. Li, Y. Xu, F. Hu, Z. Tian
Appotronics, China

We present an advanced laser phosphor display technology (ALPD).
Blue lasers are used to illuminate a rotating phosphor wheel. By
keeping phosphor low working temperature, efﬁciency is maintainedeven at high power. Light source using ALPD is also compact and has
long lifetime. It meets the requirement for commercial display.
116Thu./Fri.
PH2 - 4
18:05

December 5/6
Nematic Liquid Crystalline Phase of Red-Emitting
HEu(MoO4)2 Nanoscroll
M. Watanabe, K. Uematsu, S. W. Kim, K. Toda, M. Sato
Niigata Univ., Japan

We synthesized the novel red-emissive nematic inorganic liquid crystal,
HEu(MoO4)2 nanoscrolls by the exchange of K+ to H+ in KEu(MoO4)2
phosphor. This material exhibit red emission under excitation of 465 nm
assigned to the f-f transition of Eu3+. Microscope images under crossed
polarizers indicated HEu(MoO4)2 nanoscrolls show liquid crystal phase.
Author Interviews and Demonstrations
18:30 – 19:10

Friday, December 6
9:00 - 9:55

Main Hall A

Chair:
Co-Chair:Y. Li, Appotronics, China
K. Hara, Shizuoka Univ., Japan

PH3 - 1:
9:00

Invited New Blue Light Excitable Red-Emitting
Phosphate Phosphor

PH

PH3: Phosphors for Lighting
Special Topics of Interest on Lighting Technologies

K. Toda, S.-W. Kim, T. Ishigaki, T. Hasegawa,
K. Uematsu, M. Sato
Niigata Univ., Japan
A novel red-emitting olivine-structure type phosphor NaMgPO4:Eu2+
was synthesized for the ﬁrst time by the melt synthesis technique. The
NaMgPO4:Eu2+ phosphor shows red emission band centered at 628 nm
under blue light excitation. The internal quantum efﬁciency of thisphosphor at the excitation wavelength of 450 nm was 81%.
PH3 - 2
9:25

Synthesis and Luminescence Characterizations of
New Thiosilicates Phosphors for LED Lighting
S.-P. Lee, T.-M. Chen, C.-H. Huang*, T. S. Chan**Nat. Chiao Tung Univ., Taiwan*ITRI, Taiwan**Nat. Synchrotron Radiation Res. Ctr., Taiwan

Unprecedented M(La1-xCex)2 Si2S8 (M = Ca, Sr, Ba) phosphors were
investigated and evaluated for potential application in white-light LEDs.
The Ce3+-activated thiosilicates can be excited by near-UV to blue lightand show green broadband emissions. Recent progress on theirluminescence and applications are discussed.

117

Friday
PH3 - 3
9:40

December 6
Comparison of ACELs Formed on Copper, Silver
and Gold Back Electrodes
J. Silver, G. R. Fern, P. G. Harris, P. Reip*, A. Kong*,
P. Bishop**, A. Berzins**, S. Jones***
Brunel Univ., UK*Intrinsiq Materials, UK**Johnson-Matthey Tech. Ctr., UK***Printed Elect., UK

AC electroluminescent display panels were prepared by ﬁrst ink-jet
printing electrode structures (either copper, silver or gold) onto
substrates, then screen printing ﬁrst a single binder layer (containing
both the ACEL phosphor powder and the barium titanate ferroelectric
particles) before ﬁnally overprinting with a transparent conducting
electrode.
----- Break ----10:40 - 12:10

Meeting Room 206

FED2/PH4: Applications & New Materials
Chair:
Co-Chair:Y. Gotoh, Kyoto Univ., JapanT. Kusunoki, Dexerials, Japan

FED2/
PH4 - 1:
10:40

Invited Performance of Microcolumn for Fine
Electron Beam Applications
Y. Neo, A. Koike, H. Mimura, H. Murata*, T. Yoshida**,T. Nishi**, M. Nagao**
Shizuoka Univ., Japan*Meijo Univ., Japan**AIST, JapanThe newly designed microcolumn consists of an acceleration lens andan electron gun, which is composed of a ﬁeld emitter and a condenser
lens. The microcolumn could focus the electron beam to a diameter of
40 µm at a working distance of 2 mm without any acceleration ﬁeld tothe anode.
FED2/
PH4 - 2
11:10

Cathodoluminescence in Transparent Perovskite
Films for RGB Colors
H. Takashima, M. Nagao
AIST, Japan

Thin-ﬁlm cathodoluminescence has been successfully obtained in thechemically stable perovskite oxide ﬁlms. By using the ﬁeld emitter witha gate electrode for the source of electrons, high-quality blue, green
and red color and whole-surface intense cathodoluminescence wereobserved.

118

Friday
FED2/
PH4 - 3
11:30

December 6
Cathodoluminescence Spectra of Single
Gd2O2S:Tb3+ Nanometer Sized Phosphor Crystals
Excited in a Field Emission Scanning Transmission
Electron Microscope
G. R. Fern, X. Yan, N. Wilkinson*, J. Silver
Brunel Univ., UK*Gatan UK, UK

Cathodoluminescence spectra have been collected from eightnanometer-sized crystals of Gd2O2S:Tb3+ using the Gatan Vulcan
cathodoluminescence imaging spectrometer and the temperaturedependence of the CL spectrum of a single nanometer-sized crystal
reported. Slight variation observed in the 8 CL spectra are explainedand discussed in relation to bulk samples.
FED2/
PH4 - 4
11:50

Cathodoluminescence Spectra of Single Y2O2S:Tb3+
Nanometer Sized Phosphor Crystals Excited in a
Field Emission Scanning Transmission Electron
MicroscopePH

J. Silver, X. Yan, N. Wilkinson*, G. Fern
Brunel Univ., UK*Gatan UK, UK

Cathodoluminescence (CL) spectra have been collected from single
nanometer-sized crystals of Y1.9Tb0.1O2S using the Gatan Vulcan
cathodo- luminescence imaging spectrometer. The slight variation
observed in the CL spectra taken from the four crystals are explained,
and discussed in relation to bulk samples.
----- Lunch ----Author Interviews and Demonstrations
16:40 – 17:20
Supporting Organizations:
Phosphor Research Society. The Electrochemical Society of JapanThe 125th Research Committee on Mutual Conversion between
Light and Electricity, JSPS

Evening Get-Together
with Wine
Tuesday, December 3, 2013
18:00 – 20:00
at Restaurant Sora (1F),
Sapporo Convention Center(Sponsored by Merck Ltd., Japan)
See page 12 for details
119Friday

December 6

Workshop on
Field Emission Display and CRT
Friday, December 6
9:00 - 9:10

Meeting Room 206

Opening
Opening Remarks
9:00
H. Mimura, Shizuoka Univ., Japan
9:10 - 10:30

Meeting Room 206

FED1: Novel Devices & Applications
Chair:
Co-Chair:

M. Nagao, AIST, Japan
Y. Neo, Shizuoka Univ., Japan

FED1 - 1:
9:10

Invited Field Assisted Photocathode with Plasmonic
Antennas
M. Niigaki, T. Hirohata, W. Akahori
Hamamatsu Photonics, Japan

We present a novel ﬁeld-assisted photocathode exhibiting an enhanced
photoemission by plasmonic antennas fabricated on the surface. The
plasmonic antennas serve to guide the incident photon ﬂuxes into thenanoscale apertures of the photocathodes by the surface plasmon
resonance.
FED1 - 2:
9:40

Invited Active-Matrix Drive Circuit for Image Sensor
Consisting of Field Emitter Array and Avalanche
Photoconductor
Y. Honda, M. Nanba, K. Miyakawa, M. Kubota, N. Egami*NHK, Japan*Kinki Univ., Japan

A novel active-matrix drive circuit was simulated and fabricated todevelop a compact ultrahigh-sensitivity image sensor consisting of anactive-matrix Spindt-type FEA and avalanche photoconductive ﬁlm.
Simulation and experimental results showed that the novel activematrix drive circuit can shorten a response time and can potentiallymeet the HDTV standard.

120Friday
FED1 - 3
10:10

December 6
Highly Reliable MIM-Cathode-Arrays for Large-Size
FED
M. Ikeda, T. Kusunoki, M. Sagawa, M. Suzuki,
E. Nishimura, T. Hirano
Hitachi, Japan

By using a multilayer base electrode that consists of aluminum-2at%neodymium alloy, a hillock-less structure on the base electrode wasfabricated, enabling the development of highly reliable MIM-cathodearrays for large-size FED. As a result, the probability of short-circuits
occurring between the scan-line and data-line was decreased to lessthan 0.001%.
----- Break ----10:40 - 12:10

Meeting Room 206

FED2/PH4: Applications & New Materials
Chair:
Co-Chair:Y. Gotoh, Kyoto Univ., JapanT. Kusunoki, Dexerials, Japan

FED2/
PH4 - 1:
10:40

Invited Performance of Microcolumn for Fine
Electron Beam Applications

FED

Y. Neo, A. Koike, H. Mimura, H. Murata*, T. Yoshida**,T. Nishi**, M. Nagao**
Shizuoka Univ., Japan*Meijo Univ., Japan**AIST, JapanThe newly designed microcolumn consists of an acceleration lens andan electron gun, which is composed of a ﬁeld emitter and a condenser
lens. The microcolumn could focus the electron beam to a diameter of
40 µm at a working distance of 2 mm without any acceleration ﬁeld tothe anode.
FED2/
PH4 - 2
11:10

Cathodoluminescence in Transparent Perovskite
Films for RGB Colors
H. Takashima, M. Nagao
AIST, Japan

Thin-ﬁlm cathodoluminescence has been successfully obtained in thechemically stable perovskite oxide ﬁlms. By using the ﬁeld emitter witha gate electrode for the source of electrons, high-quality blue, green
and red color and whole-surface intense cathodoluminescence wereobserved.

121

Friday

December 6
Cathodoluminescence Spectra of Single
Gd2O2S:Tb3+ Nanometer Sized Phosphor Crystals
Excited in a Field Emission Scanning Transmission
Electron Microscope

FED2/
PH4 - 3
11:30

G. R. Fern, X. Yan, N. Wilkinson*, J. Silver
Brunel Univ., UK*Gatan UK, UK
Cathodoluminescence spectra have been collected from eightnanometer-sized crystals of Gd2O2S:Tb3+ using the Gatan Vulcan
cathodoluminescence imaging spectrometer and the temperaturedependence of the CL spectrum of a single nanometer-sized crystal
reported. Slight variation observed in the 8 CL spectra are explainedand discussed in relation to bulk samples.
Cathodoluminescence Spectra of Single Y2O2S:Tb3+
Nanometer Sized Phosphor Crystals Excited in a
Field Emission Scanning Transmission Electron
Microscope

FED2/
PH4 - 4
11:50

J. Silver, X. Yan, N. Wilkinson*, G. R. Fern
Brunel Univ., UK*Gatan UK, UK
Cathodoluminescence (CL) spectra have been collected from single
nanometer-sized crystals of Y1.9Tb0.1O2S using the Gatan Vulcan
cathodo luminescence imaging spectrometer. The slight variation
observed in the CL spectra taken from the four crystals are explained,
and discussed in relation to bulk samples.
----- Lunch ----13:30 - 15:00

Meeting Room 206

FED3: Fabrication Process & CNT Emitters
Chair:
Co-Chair:H. Mimura, Shizuoka Univ., Japan
H. Shimawaki, Hachinohe Inst. of Tech., Japan

FED3 - 1:
13:30

Invited Fabrication of Spindt-Type FEAs with
Volcano-Structured Focusing Electrode
M. Nagao, T. Yoshida
AIST, JapanA new fabrication method of Spindt-type emitters is presented. In our
method, double-layered photoresist is used as a lift-off layer, and gate
hole is formed after emitter-tip formation. As a result, volcanostructured focusing electrodes can be easily formed on the Spindt-type
metal emission tip.

122

Friday
FED3 - 2
14:00

December 6
Evaluations for Graphene Flower Cloth as a Field
Emitter and Its Applications
Y. Iwai*,***, K. Muramatsu**, A. Jyouzuka*, T. Nakamura*,
Y. Onizuka*, H. Mimura****Onizuka Glass, Japan**Incubation Alliance, Japan***Shizuoka Univ., Japan

We have fabricated a novel graphene material named graphene ﬂower
cloth (GFC). GFC has numerous graphenes for creating high electricﬁeld on the surface. Huge ﬁeld emission current exceeding 1.5 mAfrom GFC was obtained. X-ray tube with the GFC will be demonstrated.
FED3 - 3
14:20

Fabrication of Carbon Nanotube Field Emitter with
Side-Gate Electrode and Its Emission Property
S. Okawaki, S. Nitta, S. Abo, F. Wakaya, M. Takai
Osaka Univ., Japan

CNT ﬁeld emitters with side-gate electrodes were fabricated by screen
printing with several surface treatments and their emission properties
were evaluated. The CNT ﬁeld emitter with tape peeling showed thehighest anode current. The CNT ﬁeld emitter with KrF excimer laser
irradiation and high-electric-ﬁeld pulse aging showed the longest
lifetime.
Microscopic Properties of Carbon Films That
Remarkably Improves Field Emission Features
S. Horie, K. Asanagi, T. Higuchi, Y. Yamada, M. Sasaki
Univ. of Tsukuba, Japan
Field emission features are remarkably improved upon coating with ﬂat
carbon thin ﬁlms consisting of nanometer-scale grains. Here, to clarify
the mechanism, we have examined microscopic properties of shapecontrolled W tips coated with the carbon ﬁlms by using FIM and FEM.
----- Break ----15:10 - 16:30

Meeting Room 206

FED4: FE Materials & Mechanisms
Chair:
Co-Chair:M. Sasaki, Univ. of Tsukuba, JapanF. Wakaya, Osaka Univ., Japan

FED4 - 1
15:10

Work Function Measurements of W(100) Surface
Modified by Neodymium Oxide by Using PEEM and
FEM
T. Kawakubo, H. Nakane*
Kagawa Nat. College of Tech., Japan*Muroran Inst. of Tech., Japan

It is well known that the work function of W(100) surface is reduced
after application of a very thin surface layer of transition metal andheating in an oxygen environment. In this research, we measured thework function of W(100) modiﬁed by Neodymium and oxygen by using
PEEM and FEM.
123

FED

FED3 - 4
14:40

Friday
FED4 - 2
15:30

December 6
Measurement of Work Function of Hafnium Nitride
Films at Elevated Temperatures in Ultra High
VacuumS. Fujiwara, S. Hogyoku, H. Tsuji, Y. Gotoh
Kyoto Univ., Japan

Hafnium nitride thin ﬁlms were prepared by radio frequency magnetron
sputtering, and the work function of the ﬁlms was investigated at thetemperatures up to 380oC in ultrahigh vacuum. The work function
showed a monotonous decrease with the increase in the temperature.
FED4 - 3
15:50

Evaluation of Radiation Tolerance of Hafnium Nitride
Field Emitter Arrays
Y. Gotoh, Y. Yasutomo, H. Tsuji
Kyoto Univ., Japan

Attempts to evaluate the radiation tolerance of hafnium nitride ﬁeld
emitter arrays was performed by comparing the current-voltage
characteristics of the gate/insulator/emitter structure before and after
exposure either to a proton or an alpha beam. No signiﬁcantdegradation of insulating property was observed up to the ﬂuence of 10µC.
FED4 - 4
16:10

Photoresponse of MOS Cathodes Based on
Nanocrystalline Silicon
H. Shimawaki, Y. Neo*, H. Mimura*, F. Wakaya**,
M. Takai**
Hachinohe Inst. of Tech., Japan*Shizuoka Univ., Japan**Osaka Univ., Japan

We investigate the photoassisted electron emission from metal-oxidesemiconductor (MOS) cathodes based on nanocrystalline silicon (nc-Si)
induced by laser pulses. Here, we report the results on thephotoresponse of the cathode device under illumination of blue laser
pulses.
Author Interviews and Demonstrations
16:40 – 17:20
Sponsor:158th Committee on Vacuum Nanoelectronics, JSPS124

Wednesday

December 4Workshop on OLED Displays andRelated Technologies
Wednesday, December 4
13:40 - 16:40

Main Hall C

Poster OLEDp1: OLED Technologies
OLEDp1 - 1 Optical and Electrical Properties of MoO3/Ag/MoO3
Multilayer as Transparent Anode in Inverted TopEmitting Organic Light Emitting Devices by Using
Multistep Vacuum Deposition
M. Shibasaki, T. Matuzaki, K. Sakurai, T. Uchida
Tokyo Polytechnic Univ., Japan
We investigated the MoO3/Ag/MoO3(MAM) transparent conducting ﬁlm(TCF) for inverted OLEDs. The MAM ﬁlm was fabricated a transparent
electrode by thermal evaporation with high transmittance andconductivity (68% and 6.1Ω/□). The multilayer MAM ﬁlm was suitable
for a transparent electrode in OLEDs.
OLEDp1 - 2 Influence of Substrate Temperature on Luminance
Characteristics of Organic Light-Emitting Diode
Fabricated by Ultrasonic Deposition Method
A. Sato, T. Fukuda, N. Kamata, T. Yoshitomi*
Saitama Univ., Japan*Calsonic Kansei, Japan

OLEDp1 - 3 Novel Polymerizable Liquid Crystal and Its Reverse
Wavelength Dispersion Property
K. Sakamoto, K. Okuyama, S. Kiriki, K. Taira,
M. Aimatsu, H. Ooishi, H. Shu
ZEON, Japan
We have already reported a polymerizable liquid crystal, LCK-5001,
and its reverse wavelength dispersion property that is suitable for
OLED displays. This paper describes polymerizable liquid crystal, LCK5059 that has improved reverse wavelength dispersion property.
Optical performances of circular polarizing ﬁlm using LCK-5059 was
drastically improved from LCK-5001 ﬁlms.

125

OLED

We demonstrated organic light-emitting diode (OLEDs) fabricated by
the temperature-controlled ultrasonic deposition method. The
evaporation speed of the solvent affects the surface morphology of theorganic thin ﬁlm, and maximum luminance of 3,540 cd/m2 and thecurrent efﬁciency of 1.04 cd/A were achieved by optimizing the
fabrication condition.

Wednesday

December 4

OLEDp1 - 4 Efficiency Control of Organic Light-Emitting Diodes
for High Contrast Ratio
M. J. Park, Y. H. Son, Y. J. Kim, J. H. Kwon
Kyung Hee Univ., Korea
We demonstrate the efﬁciency control of organic light-emitting diodes
with a hole-delay layer (HDL) by adjusting of the exciton recombination
zone for high contrast ratio. An optimized HDL allows efﬁciency tosuppress at the black level of active matrix driving mode and it gets
greater at higher luminance.
OLEDp1 - 5 Withdrawn
OLEDp1 - 6 High Efficiency Orange-Red Phosphorescent
Iridium(III) Complexes for Solution-Processable
Organic Light-Emitting Diode Based on SmallMolecule Mixed Host
W.-C. Su, C.-H. Yuan, A.-K. Cheng, S.-B. Chen, C.-F. Lin*,
Y.-C. Chiu*, Z.-Y. Lin*, S.-W. Liu*, C.-C. Lee
Nat. Taiwan Univ. of S&T, Taiwan*Ming Chi Univ. of Tech., Taiwan

Here, we used a single-layer mixed-host with SimCP2 to achieve theorange-red phosphorescent organic light-emitting diode with thecurrent efﬁciency improved from 14.9 to 21.5 cd/A @ 500 cd/m2 ascompared with using PVK. A better charge balance obtained from
SimCP2 host was the main cause for this high efﬁciency.
OLEDp1 - 7 Flexible OLEDs on Polyimide-Graphene Composite
Film and Properties
W. S. Cho, M. Y. Lee, H. H. Kim, G. S. Kwak, S. Y. Park,
L. S. Park
Kyungpook Nat. Univ., Korea
The polyimide-graphene composite ﬁlms were made by ﬁlm coating of
mixture of polyamic acid with reduced graphene oxide. The ﬂexible
OLEDs were fabricated by using the polyimide-graphene composite
ﬁlms on ITO/Ag/ITO ﬁlms were deposited by roll-to-roll sputter andproperties of ﬂexible OLEDs were examined from the viewpoint of
ﬂexible substrates.
OLEDp1 - 8 Highly Efficient Phosphorescent White Organic
Light-Emitting Devices with Theoretical Efficiency
Using Single Host Structure
J.-M. Do, J.-H. Jung, J.-G. Choi, D.-G. Moon
Soonchunhyang Univ., Korea
In this paper, we have developed highly efﬁcient white organic lightemitting devices using a single host structure. The mCP used as hostfor the blue and orange red phosphorescent FIrpic and Ir(2-phq)3
molecules. The maximum current efﬁciency was which is theoreticallyachievable efﬁciency of 55 cd/A.

126

Wednesday

December 4

OLEDp1 - 9 Highly Efficient Phosphorescent Yellow OLED for
Two Peak White Tandem OLED Application
Y. J. Kim, Y. H. Son, S. H. Kim, J. H. Kwon
Kyung Hee Univ., Korea
We report highly efﬁcient phosphorescent yellow OLEDs for tandem
white OLED application. Fabricated device structure was ITO/ di-[4(N,N-ditolyl-amino)-phenyl]cyclohexane(50
nm)/
bis[2-(2hydroxyphenyl)-pyridine] beryllium: iridium(III) bis(4-(4-t-butylphenyl)
thieno[3,2-c]pyridinato-N,C2)acetylacetonate) (3%, 10 nm)/ (1,3,5-tri[(3-pyridyl)-phen-3-yl] benzene (40 nm)/ LiF (1.5 nm)/ Al (100 nm). The
extremely high EQE of 25.0%, current efﬁciency of 84.4 cd/A are
reported.
OLEDp1 - 10 White Organic Light-Emitting Diodes Using p- andn-Type Emissive Host Materials with Single Red
Dopant in Emitting Layer
J.-A. Yoon*, N. H. Kim*, S. I. Yoo*, J. W. Kim*, C.-B. Moon*,
A. Turak**, W. Y. Kim*,***Hoseo Univ., Korea**McMaster Univ., Canada

WOLEDs were fabricated using p-, n-type host materials and red
dopant material with different structures of the emitting layer. The best
performance out of devices was achieved when double emissive layer
consists of BAlq and DPVBi. Luminous efﬁciency and CIExy of WOLED
were 7.13 cd/A at 50 mA/cm2 and (0.34,0.33) at 8 V.
OLEDp1 - 11 Yellow Emitting Material for OLED and Remote
Phosphor Application for Lighting

NAS Belarus, Belarus
We investigated electrochemical properties of novel yellow luminescentmaterial Pt284. This material shows good electrochemical stability on
air conditions and have HOMO LUMO levels -5,28 eV and -2,78 eV
respectively. Remote phosphor device with CEI color coordinates u=
0,27 v=0,45 have been done using LED 460 nm and Pt284 in PBMA
matrix.
OLEDp1 - 12 Flexible Thin Film Encapsulation with Spatially
Resolved Atomic Layer Deposition
S. H. Yong, H. S. Yoo, S. M. Cho, H. Chae
Sungkyunkwan Univ., Korea
Al2O3 thin ﬁlm was prepared by spatially resolved atomic layer
deposition (ALD) process and the inorganic layer was used for OLEDs
thin ﬁlm encapsulation process. In this work we characterized various
process variables in the spatially resolved ALD process.

127

OLED

A. Stankevich, A. Murauski, A. Muravsky, V. Petushok,
V. Olkhovic, V. Agabekov

Wednesday

December 4

OLEDp1 - 13 Characterization of Metal Nanowire Synthesis for
Flexible Transparent Electrodes
S. Choi, W. Hwang, S. M. Cho, H. Chae
Sungkyunkwan Univ., Korea
Metallic nanowires are emerging transparent electrodes for their
ﬂexible property, high transmittance and conductivity. Specially, silver
nanowires can be synthesized by the polyol method at low cost. As
control the variables such as stirring rate, molar ratio of source andtemperature, we can control the scale of silver nanowires.
OLEDp1 - 14 OLED Deposition System Using Plane-Source
Evaporation Techniques
S.-H. Lai, C.-C. Chen, C.-C. Wang, F.-C. Tung,
S.-H. Chen, Y.-S. Wang
ITRI, Taiwan
The equipment with plane-type evaporation source for thin ﬁlm
evaporation is proposed. The parallel direct simulation Monte Carlo(DSMC) method is also developed for obtaining large-area uniformity
for various organic materials on substrate. The system maintains ﬁlm
thickness non-uniformity of less than 5% and provides high material
utilization of over 70%.
OLEDp1 - 15 High Color Rendition White Organic Light-Emitting
Diodes with Excimer and Fluorescent Emitter for
Lighting Application
Y. Jiang, Z. Xie*, W.-Y. Wong*, H.-S. Kwok
Hong Kong Univ. of S&T, Hong Kong
*Hong Kong Baptist Univ., Hong Kong
A novel Pt based triplet emitter with broadband yellow-red emission ,was employed in the fabrication of WOLEDs. This broadband emission
was a result of the combined effect of monomer and excimer emissionof the Pt compound. By mixing with BCZVBi, a high CRI of 95.6
WOLED was demonstrated.
OLEDp1 - 16 Electroluminescence Improvement of Quantum
Dots Light Emitting Diodes through Organic Hole
Transport Layer Optimization
M. D. Ho, D. Kim, N. Kim, H. Chae
Sungkyunkwan Univ., Korea
In this research, we investigated improvement of electroluminescence(EL) performance of QD-LED through a composition of organic holetransport materials (polymer and small molecules). Furthermore, theeffects of thermal annealing of hole transport layer on the morphology
and EL performance of QD-LED were also demonstrated.

128

Wednesday

December 4

OLEDp1 - 17L Withdrawn
OLEDp1 - 18L An Organic-Inorganic Hybrid Light-Emitting Diode
Containing Molybdenum Disulfide Flakes inside theEmissive Layer
T.-H. Song, H. S. Lee*, J. H. Jeon**, S. Im*, W.-S. Hong
Univ. of Seoul, Korea*Yonsei Univ., Korea**Korea Aerospace Univ., Korea
Organic-inorganic hybrid light-emitting diodes were fabricated byinserting ﬂakes of molybdenum disulﬁde in the middle of the emissive
layer of a standard OLED. Brightness of the hybrid diode containing
MoS2 ﬂakes was approximately three times higher than that of allorganic samples.
OLEDp1 - 19L MoO3 /Metal/MoO3 Transparent Electrode for OLEDs
K. Banzai, S. Naka, H. Okada
Univ. of Toyama, Japan
MoO3/metal/MoO3 multilayers were prepared on glass substrate by avacuum deposition for transparent electrode in organic light-emitting
diodes (OLEDs). Thin silver was used as a metal layer. Bright emissionthat was similar to indium-tin-oxide anode device was obtained fromthe OLEDs with multilayer anode.
OLEDp1 - 20L Solution-Processed White Organic Light-Emitting
DiodesJ.-Y. Liao, H.-C. Yeh, T.-C. Chao, J.-S. Lin, C.-H. Chou,
M.-R. Tseng

The solution-processed white organic light-emitting diode composed ofa newly developed yellow emitter, PO-08, and orange-red emitter, PR08, are studied. White devices composed of the two emitters withpower efﬁcacies of 23.9 and 11.0 lm/W are reported at the brightnessof ca. 1000 nits.
OLEDp1 - 21L Withdrawn

129

OLED

ITRI, Taiwan

Wednesday

December 4

13:40 - 16:40

Main Hall C

Poster AMDp3/OLEDp2: AMOLED
AMDp3/A Pixel Circuit for AMOLED Displays Compensating
OLEDp2 - 1 for Threshold Voltage and Mobility Variation
C.-K. Kang*,**, B.-D. Choi***Samsung Display, Korea**Sungkyunkwan Univ., Korea

A new pixel circuit for an active-matrix organic light-emitting diode(AMOLED) is proposed with a novel driving scheme based on lowtemperature, polycrystalline-silicon thin ﬁlm transistors (LTPS TFTs).
The proposed circuit consists of three n-type TFTs and a capacitor to
successfully compensate for variations of the threshold voltage andmobility in the TFTs.
AMDp3/A Compensation Driving Gear for the Electronic
OLEDp2 - 2 Degradation of AMOLED
B.-J. Sun, Y.-Y. Huang, C.-H. Huang, S.-C. Huang
Chunghwa Picture Tubes, Taiwan
The threshold voltage degradation of AMOLED pixel circuit has
improved with new programming method. The error rate of OLED
current has decreased to 2.06% at least when the degradation rangesof threshold voltage are 0.33 and -0.33 V. The simulation result
demonstrates that the proposed circuit can improve the stability
current.
AMDp3/New Pixel Circuit Using a-IGZO TFTs to Compensating
OLEDp2 - 3 for OLED Luminance Drop of AMOLED Displays
P.-S. Chen, W.-Y. Chang, F.-C. Chang, C.-L. Lin
Nat. Cheng Kung Univ., Taiwan
This work presents a new pixel circuit design adopting amorphous
indium-gallium-zinc-oxide (a-IGZO) thin-ﬁlm transistors (TFTs) thatcompensates for the threshold voltage shift of the driving TFT andameliorates the luminance drop of OLED for active-matrix organic lightemitting diode (AMOLED) display.

130

Wed./Thu.

December 4/5

AMDp3/
Low Voltage Operation of Organic Field-Effect
OLEDp2 - 4 Transistors with Embedded Electrodes
Y. Kimura, T. Nagase, T. Kobayashi, K. Takimiya*,
M. Ikeda**, H. Naito
Osaka Pref. Univ., Japan*Hiroshima Univ., Japan**Nippon Kayaku, JapanLow voltage operation of organic ﬁeld-effect transistors (OFETs) withembedded source/drain electrodes has been demonstrated. Soluble
small molecules of 2,7-dioctyl [1]benzothieno[3,2-b][1] benzothiophene
and CYTOP were used as organic semiconducting and insulating
layers, respectively. Low voltage operation (VDS=-10 V) is shown bythinning the gate insulating layer of the OFETs.
Author Interviews and Demonstrations
18:30 – 19:10

Thursday, December 5
9:00 - 10:30

Conference Hall

OLED1: Materials and Devices
Chair:
Co-Chair:T. Wakimoto, Merck, Japan
T. Inoue, TDK, Japan

OLED1 - 1: Invited New Routes of Triplet Harvesting in Organic
9:00
Light Emitting Diodes
C. Adachi

By using unlimited freedom of molecular structures, we designed newlight emitting molecules having highly efﬁcient delayed ﬂuorescence. In
this report, we clarify the molecular design and device architecture forhigh efﬁciency and demonstrate the promising reliability.
OLED1 - 2: Invited High Performance All-Phosphorescent Three
9:25
Color White OLEDs Based on a New Blue
Phosphorescent Emitter
S. Watanabe, S. Metz, P. Murer, H. Wolleb,
G. Wagenblast, C. Lennartz, U. Heinemeyer, I. Münster
BASF, Germany
The use of all-phosphorescent OLED lighting devices is mandatory tosatisfy efﬁciency demands. However, due to the limitation of emission
color and lifetime of blue phosphorescent emitters, color quality andlifetime are still limited. To overcome these limitations, a new class of
stable pure blue phosphorescent emitters was developed.

131

OLED

Kyushu Univ., JapanThursday
OLED1 - 3
9:50

December 5
Development of Highly Efficient and Long-Lived
Light-Blue Phosphorescent Material Technology
H. Ito, K. Hiyama, H. Kita
Konica Minolta, Japan

Towards higher efﬁciency of OLED, development of bluephosphorescent emitters is awaited. However, the short lifetime of blue
phosphorescent OLED is regarded as the bottleneck ofcommercialization. We will report our technology which enables both
high efﬁciency and long lifetime (EQE 23%, LT50 100khrs) bydesigning suitable host materials for emitters.
OLED1 - 4L: Invited Improving Efficiency of Blue Fluorescent
10:10
OLED by Controlling Molecular Shape of Dopant
K. Okinaka, T. Ogiwara, H. Ito, Y. Mizuki, R. Naraoka,
M. Funahashi, H. Kuma
Idemitsu Kosan, JapanThe relationship between molecular shape of blue ﬂuorescent dopants(BDs) and device performance was studied. BDs with larger ovality hadstrong tendency to show higher orientation factor and higher EQE ofover 10%. It was suggested that increasing parallel dipole contributed
to higher optical out-coupling.
----- Break -----

IDW ’14The 21st International Display Workshops
December 3 – 5, 2014
Toki Messe Niigata Convention Center
Niigata, Japan
http://www.idw.ne.jp132

Thursday

December 5

10:40 - 12:00

Conference Hall

OLED2: Display Technologies
Chair:
Co-Chair:

H. Kuma, Idemitsu, Japan
S. Enomoto, Toshiba Lighting & Tech., Japan

OLED2 - 1
10:40

Active Matrix OLED Microdisplay for Augmented
Reality Applications with Improved Color Space
M. Thomschke, K. Fehse, B. Richter, P. Wartenberg,
R. Pfeifer, U. Vogel
Fraunhofer Ctr. for Organic Materials & Elect. Devices,
Germany

Our contribution describes the optimization of OLED microdisplays toincrease the color gamut and to reduce the OLED complexity. We showthat these improvements can be reached by a 3-color RGB-white
OLED approach that features a single layer multicolor emitting zone,
respectively.
OLED2 - 2
11:00

Improved Bi-Directional Illumination Transparent
White Organic Light-Emitting Diodes with
Asymmetric Multilayer Electrode
C.-H. Yuan, Y.-H. Liu*, K.-T. Chen*, W.-C. Su,
A.-K. Cheng, S.-B. Chen, C.-F. Lin*, S.-W. Liu*, C.-C. Lee
Nat. Taiwan Univ. of S&T, Taiwan*Ming Chi Univ. of Tech., Taiwan

OLED2 - 3
11:20

Wide View-Angle Top-Emitting Organic LightEmitting Diodes Based on Green Fluorescent
Dopant: Research on Transparent Electrode andAngular Characteristic
C.-F. Lin, C.-H. Yuan*, Y.-C. Chiu, Y.-H. Liu, K.-T. Chen,
Z.-Y. Lin, W.-C. Su*, S.-W. Liu, C.-C. Lee*
Ming Chi Univ. of Tech., Taiwan*Nat. Taiwan Univ. of S&T, Taiwan

The authors reported a wide view-angle top-emitting organic lightemitting diode by using MoO2/Ag/WO3 (MAW) as an asymmetricdielectric/metal/dielectric transparent electrode. MAW electrode leaded
to a further improved current density and luminance due to an efﬁcientcarrier injection and transport. Moreover, it also exhibited a low
angular-dependent luminance for display technology.

133

OLED

A controllable bi-directional illumination from white organic lightemitting diode was demonstrated. By adjusting the transparency oftransparent electrode, the bottom-to-top emission ratio can be
modulated and exhibited more balanced properties than traditionaltransparent cathode. The use of asymmetric multilayer electrodeshowed a much improved current efﬁciency and total external
efﬁciency.

Thursday

December 5

OLED2 - 4L Enabling Dark Injection SCLC to Characterize
11:40
Trapping in OLED Charge Transport Layers
F. Bloom, O. Langguth, T. Canzler
Novaled, Germany
Dark injection space charge limited current (DI-SCLC) is used toevaluate hole transport layers (HTLs) with different trap concentrations
resulting from different HTL purities. We show that by varying themeasurement duty cycle DI-SCLC can determine in a sample withsigniﬁcant trapping the trap-free mobility and the mobility with traps.
----- Lunch ----13:30 - 14:55

Conference Hall

OLED3: Flexible and Backplane Technologies
Chair:
Co-Chair:K. Monzen, Nissan Chem. Inds., Japan
Y. Sakai, Mitsubishi Chem., Japan

OLED3 - 1: Invited Polymer and Crystalline Small Molecule
13:30
Organic Semiconductor Materials for Mass
Produced Displays
M. James, I. Afonina, T. Backlund, R. Bhintade, S. Bain,
T. Cull, G. Lloyd, D. Sparrowe, L.-W. Tan,
P. Wierzchowiec, M. Verrall
Merck Chems., UK
We demonstrate how development of organic semiconductors, passive
materials and formulation enables the manufacture of highperformance OTFT arrays suitable for mass production of printed
display backplanes. We utilize polymer or small molecule organic
semiconductors, which can be printed or coated to fabricate OTFTʼs
with mobilities greater than amorphous silicon.
OLED3 - 2
13:55

Fabrication of High Performance, Flexible andSolution Processed OTFTs for Display Backplanes
K. L. McCall, B. A. Coombs, S. D. Ogier
Ctr. for Process Innovation, UK

This paper details progress towards optimum OSC/OTFT processing
and performance to enable their integration into ultra-ﬂexible AM-OLED
backplanes. Using rapid solution processing and chemical wet etching
we demonstrate high resolution OSC patterning, resulting in OTFT
arrays on plastic with ﬂexibility tested to 1mm bend radius.

134Thursday
OLED3 - 3
14:15

December 5
Flexible AM-OLED Display on Ultra-Thin Glass
C. C. Kuo, J.-Y. Chiou, S.-F. Liu, C.-H. Chiu, C.-H. Lin,
Y.-C. Sun, M.-C. Chen, Y.-W. Chiu
Chunghwa Picture Tubes, Taiwan

Last year, we had demonstrated the ﬂexible EPD display using 0.1 mm
ultra thin glass as substrate. Furthermore, we demonstrate 6-in. ﬂexible
AMOLED display on 0.1 mm ultra-thin glass in this year. The module
thickness of the AMOLED display is about 0.25 mm which can realize
thinner and lighter portable device.
OLED3 - 4L: Invited Flexible and Printed Organic TFT Devices
14:35
and Integrated Circuits
S. Tokito
Yamagata Univ., Japan
Fine patterning of silver nanoparticle inks was demonstrated with spincoating and inkjet printing processes were applied to the source anddrain electrodes of organic thin-ﬁlm transistors (OTFTs). Fully-printed
OTFT devices and integrated circuits including pseudo-CMOS, logic
and ring oscillator circuits were fabricated on plastic ﬁlm substrates andshowed good electrical performance.
----- Break ----15:10 - 16:30

Conference Hall

OLED4: Process Technologies
S. Naka, Univ. of Toyama, JapanT. Fukuda, Saitama Univ., Japan

OLED4 - 1
15:10

Surface Morphology Control of Organic
Semiconductor Layers Using Surface Control
Additives on Solution Processes

OLED

Chair:
Co-Chair:K. Sakanoue, H. Harada, K. Ando, J. Fukai, M. Aonuma*,
C. Adachi
Kyushu Univ., Japan*Panasonic, Japan

We investigated novel organic semiconductor ink formulation including
siloxane and acryl based surface control additives to form uniform ﬁlm
morphologies on stripe patterned bank structured substrates. These
additives reduced contact angles, resulting in higher pinning position
than pristine inks. Accordingly, improved ﬁlm uniformities wereobtained.

135Thursday
OLED4 - 2
15:30

December 5
Polymer Light Emitting Diodes with PEDOT:PSS
Anode Deposited by Inkjet Printing
J. Ha, J. Park, J. Ha, D. Kim, C. Lee, Y. Hong
Seoul Nat. Univ., Korea

We fabricated polymer light emitting diodes (PLEDs) with highly
conductive and transparent polymeric anode material, PEDOT:PSS,
deposited by inkjet printing process. The PEDOT:PSS was doped withnew element such as NMF and NMP. Our PLEDs shows thecomparable efﬁciency to the device with the conventional ITO anode.
OLED4 - 3

Withdrawn

OLED4 - 4L Vacuum Based Fine Patterning of Organic Emissive
15:50
Layers for AMOLED Displays
M. Burghart, A. Dutkowiak, G. Haasemann, L. Tandler,
R. Seifert, J. Richter, F. Schröter, U. Seifert
Von Ardenne, Germany
A new innovative technology for vacuum based ﬁne patterning oforganic materials is presented. The Flash-Mask-Transfer-Lithography isbased on a transfer from a pre-patterned transfer-mask which design isclose to actual LCD masks with ﬂash-lamps as energy source. Results
on resolution, layer morphology, fabricated OLEDs and OTFTs arepresented.
OLED4 - 5L: Invited New Transparent Liquid Desiccant for OLED
16:10
Application
Y. Hoshina, T. Niyama, S. Tanaka, M. Miyagawa
Futaba, Japan
This paper reports the features of the newly developed low viscous
type desiccant and the hardening type one. By ﬁlling this transparent
liquid desiccant directly into an organic EL panel, the generation and/or
the growth of non-luminescent area inside the panel can be retarded.
----- Break -----IDW Best Paper AwardIDW Outstanding
Poster Paper Award
These awards will go to the most outstanding papers
selected from those presented at IDW ’13.
The 2013 award winners will be announced on the
IDW website: http://www.idw.ne.jp/award.html
136Thursday

December 5

16:50 - 18:15

Conference Hall

OLED5: OLED for Lighting Applications
Special Topics of Interest on Lighting Technologies
Chair:
Co-Chair:Y. Kijima, Sony, JapanT. Ikuta, JNC Petrochem., Japan

OLED5 - 1: Invited Recent Progress of OLED Performance for
16:50
Lighting Application
K. Furukawa, K. Kato, T. Iwasaki
Konica Minolta, Japan
To compete with LED in general lighting ﬁelds, one of the importantand insufﬁcient requirements for OLED lighting is the luminous efﬁcacy.
Recent progress of OLED performance, especially in phosphorescentmaterials and light out-coupling technology, will be discussed. In
addition the alternative electrode technology to ITO will be touched on.
OLED5 - 2
17:15

Out-Coupling Enhancement of OLEDs withDiffractive Micro Lens Film
Y. Kurita, H. Koshitouge, K. Mizuhara, D. Okuno,
T. Tokimitsu
Mitsubishi Rayon, JapanA diffractive micro lens alley (MLA) ﬁlm enhances emission fromorganic light-emitting diodes (OLEDs). The ﬁlm had MLA molded on
diffraction grating. The ﬁlm showed superior improvement of outcoupling efﬁciency, luminous intensity and chromatic stability. The
simulation results explained the advances of these ﬁlms.
Highly Transmissive One-Side-Emission OLED
Panel with Solid Encapsulation and Peripheral Grid
Electrode
D. Kato, K. Sugi, T. Ono, A. Amano, T. Sawabe,
T. Sugizaki, H. Kakizoe, Y. Mizuno, Y. Shinjo, S. Enomoto,I. Amemiya
Toshiba, JapanWe developed a transmissive one-side-emission OLED panel with solid
encapsulation and peripheral grid electrode to enhance thetransmittance of whole panel. The transmittance of solid encapsulation
was 1.2 times higher than that of cavity encapsulation. As a result, weachieved the high transmittance of ~65% for the whole panel.

137

OLED

OLED5 - 3
17:35

Thursday

December 5

OLED5 - 4L A 56-in. High Mobility Metal Oxide Thin Film
17:55
Transistors Active-Matrix Organic Light-Emitting
Diode Television
T.-H. Shih, P.-L. Lin, L.-F. Lin, H.-C. Ting, C.-L. Chen,
S.-J. Yu, L. Tsai, C.-H. Liu, H.-S. Lin, C.-Y. Chen,
L.-H. Chang, Y.-H. Lin
AU Optronics, Taiwan
We reported a 56-in. indium tin zinc oxide thin ﬁlm transistors activematrix organic light-emitting diode television. The long range thresholdvoltage uniformity is ~0.98 V. The mobility can reach 33.2 cm2/VS. Itʼs
~3.3 times of amorphous indium gallium zinc oxide thin ﬁlm transistors.
The thin ﬁlm transistor shows an excellent characteristic.
Author Interviews and Demonstrations
18:30 – 19:10

The 20th Anniversary Address
Shunsuke Kobayashi
Tokyo Univ. of Sci. Yamaguchianni

saver ryth

20

IDW

Wednesday, December 4, 2013
12:00 – 12:30
Conference Hall, 1F

The 20th Anniversary Exhibition
12:40 - 18:00 Wednesday, Dec. 4, 2013
10:00 - 18:00 Thursday, Dec. 5, 2013
10:00 - 14:00 Friday, Dec. 6, 2013anni

saver ry

138

th

20

IDW

Room 108, 1F
Sapporo Convention CenterWednesday

December 4Workshop on 3D/Hyper-Realistic
Displays and Systems
Wednesday, December 4
13:40 - 16:40

Main Hall C

Poster 3Dp: 3D and Hyper-Realistic Displays
3Dp - 1Development of 55-in. Active Retarder 3D Displays
W. H. Hu, Y. P. Liao, L. Q. Guo, Y. F. Du, C. G. Huang,
X. B. Shao, D. K. Yoon, D. Wang, Z. Z. He, Y. B. Yu,
Z. M. Meng, L. Liu, J. M. Wang, R. Guo, W. G. Su
Beijin BOE Display Tech., China

We have successfully demonstrated a 55-in. Active Retarder 3D display
with no ﬂicker and full resolution image. We have evaluated warm-up
time which is special features for OCB mode. And the effects of driving
pulse on crosstalk have also been studied. The warm-up time below 70
second and crosstalk below 3.0% is available.
3Dp - 2Multiple Line R/L Inversion Method for 4K 2K 3DLCDs
K. Matsuhiro*,***Arisawa Manufacturing, Japan**Asuna, JapanA new 3D LCD technology to obtain 4K2K full resolution 3D images
and simultaneous perception of right and left eye images by using the
Xpol and a double lines R/L inversion method was studied. The doublelines R/L inversion method gives the vertical 3D viewing angle of +/- 15
degrees.
3Dp - 3C.-Y. Yeh, Y.-C. Wang, C.-R. Sheu
Nat. Cheng Kung Univ., Taiwan
We investigate imaging performance for various color subpixel
arrangements of FPDs via a simulated apparatus like a real
autostereoscopic display. It is obvious that serious color separation
occurs when using vertical rather than horizontal or mosaic color
subpixel arrangements. In addition, a quantitative evaluation with visual
perceptions is also compared.

139

3D

An Apparatus with Easy Processes Used to Visually
Evaluate Imaging Performance with Respect toColor Subpixel Arrangements in Autostereoscopy
via Lenticular Lenses

Wednesday
3Dp - 4

December 4
Viewing Zone Expansion for Autostereoscopic
Display with Directional Backlight Using Convex
Lens Array
T. Mukai, H. Kakeya
Univ. of Tsukuba, Japan

This paper proposes a couple of methods to expand viewing zone ofautostereoscopic display with directional backlight composed of convex
lens array and dot matrix light source. In this paper the crosstalk thatemerges in the conventional method and the proposed methods isanalyzed based on the optical simulation.
3Dp - 5Enhanced Diffraction Efficiency of Switchable
Holographic Splitter for Stereo-Display
W.-C. Su, H.-Y. Hsiao
Nat. Changhua Univ. of Education, Taiwan

Two electrically controllable holographic polarization gratings are
spatially multiplexed to serve as an image splitter for stereogramapplication on display panel. A higher diffraction efﬁciency of the
proposed holographic grating was generated by applying an external
AC voltage during recording process.
3Dp - 6ADS Mode Shutter Glasses 3D Display System
Research of Crosstalk
W. H. Hu, L. Liu, L. Zhang, Y. P. Liao, X. B. Shao,
D. K. Yoon, D. Wang, L. Q. Guo, Y. F. Du, Z. Z. He,
Y. B. Yu, Z. M. Meng, J. M. Wang, R. Guo, W. G. Su
Beijing BOE Display Tech., China

Crosstalk is a big problem in 3D display, exactly in ADS mode LCD.
This paper is based on ADS Mode shutter glasses 3D to do the indepth study. Several directions has been analyzed, including backlight,
LCD driving, Liquid Crystal response and temperature, and put forward
for improving image quality.
3Dp - 7Visual Comfort for Advanced 3D Image Scaling
Y.-J. Li, H.-F. Wang, H.-S. Chen, C.-H. Tsao*,
N.-W. Chang*Nat. Taiwan Univ. of S&T, Taiwan*AU Optronics, Taiwan

The aim of this paper is to explore visual comfort when the objects in
3D image contents are scaled with different scaling ratios. We
investigated the 3D visual comfortable threshold in terms of scaling 3D
content, changing distances between two objects on an
autostereoscopic display of 3D laptop computer.

140

Wednesday
3Dp - 8December 4
The Effects of Environmental Illumination andScreen Brightness on Accommodation andConvergence in Handheld 3D Game Console
Y. Okada, T. Kojima, K. Yoshikawa, T. Ohashi, M. Miyao
Nagoya Univ., Japan

In this study, we measured simultaneously the variation of subjectʼsvisual accommodation and convergence as they viewed handheld 3D
games consoles. We changed the intensity of illumination as well as
the brightness of the viewing screen to understand the howaccommodation and convergence were dependent on pupil diameter.
3Dp - 9Withdrawn

3Dp - 10

Scent Presentation to Food Image and Its
Psychological Effect
K. Tomono, M. Tanaka, R. Shu, A. Tomono
Tokai Univ., Japan

A projector-style display system was newly created, in which a scent
was emitted to viewers directly through a display. The purpose of thesystem was to enhance the viewers to acquire more feelings. Then its
psychological inﬂuence on viewers was analyzed through a gazedetecting device.
3Dp - 11

Depth-Fused 3D (DFD) Display with Non-Overlapped
Pixels Using Layered LED Displays
J. Kawakami, A. Tsunakawa, S. Suyama, H. Yamamoto
Univ. of Tokushima, Japan

In this paper, we propose a new DFD (Depth-fused 3D) display inwhich LED pixels of front and rear panels are not overlapped at all.
Even in this non-overlapped DFD display, perceived depth can be
successfully changed almost linearly by changing luminance ratio
between front and rear LED panels.
3Dp - 123D

DFD Viewer Composed of Two DFD Images with aLarge Gap for Estimating Background Effect on
Perceived Depth of 2D/3D Image
M. Takahashi, H. Yamamoto, S. Suyama
Univ. of Tokushima, Japan

We propose a new DFD (Depth-fused-3D) viewer composed of two
pairs of small-gap front/rear planes with a large-gap to estimate how
background-image inﬂuences to perceived depth of 2D/3D image. The
results indicate that perceived depths of 2D/3D images are increased
when background-image with different depth is added behind 2D/3D
images.

141

Wednesday
3Dp - 13

December 4
Magnifying a Three-Dimensional Image Displayed
by a Volumetric Display Based on Optical Scanningof an Inclined Image Plane
Y. Maeda, D. Miyazaki, T. Mukai
Osaka City Univ., Japan

We propose to include an image magniﬁcation system in a volumetricdisplay based on image plane scanning for creating a large threedimensional (3D) volume image without using a large optical scanner.
The 3D volume image magniﬁed more than twice in length of each side
was displayed.
3Dp - 14

Reduction of Ghost 3D Image in the Volumetric 3D
Display by Using a Half-Wave Plate to PolarizationSwitching Device
T. Kurokawa, R. Tanimoto, Y. Okada, H. Yamamoto,
S. Suyama
Univ. of Tokushima, Japan

In order to remove ghost 3-D image in our volumetric 3-D display, we
estimated the characteristics of inappropriate polarization light inpolarization-switching device and propose improvement method toinappropriate polarization light. By using a half-wave plate behindpolarization-switching device, we can successfully suppress ghost 3-D
image to invisible.
3Dp - 15

One-Colored Time-Division Electroholography
Using a NVIDIA GeForce GTX TITAN
H. Niwase, H. Araki, N. Takada, H. Nakayama*,
A. Sugiyama**, T. Kakue**, T. Shimobaba**, T. Ito**
Kochi Univ., Japan*VASA Entertainment, Japan**Chiba Univ., Japan

We tried to display the real-time reconstructed 3-D image consisting ofa large number of object points. We propose one-colored time-divisionelectroholography using the persistence of vision. Finally, we succeed
to display a reconstructed 3-D image consisting of 44,647 object points
using a NVIDIA GeForce GTX TITAN at 12 fps.
3Dp - 16

Large-Scale Digital Holographic Display with Wide
Viewing Angle
M. Park, H. Kim, B. G. Chae, J. Hahn*, H. Kim**,C. H. Park***, K. Moon, J. Kim
ETRI, Korea*Kyungpook Nat. Univ., Korea**Korea Univ., Korea***Chungnam Nat. Univ., Korea

Holographic display system with 22-in. LCD panel is developed toprovide wide viewing angle and large holographic 3D image. It isrealized by steering a narrow viewing window resulting from very large
pixel pitch compared to the wave length of laser light.
142

Wednesday
3Dp - 17L

December 4
Semi-Portable Full-Color Electro-Holographic
Display with See-Through Vision
T. Yoneyama, T. Ichikawa, Y. Sakamoto
Hokkaido Univ., Japan

We constructed a semi-portable full-color electro-holographic display
with small size. The system can be assembled at ease. This system
displays high resolution full-color holographic movie calculated bycomputer generated holograms, and enables observers to view theaugmented reality scene with see-through structure.
3Dp - 18L

Computer-Generated Hologram on GRAPE-DR
A. Sugiyama, M. Oikawa, N. Okada, H. Nakayama,
N. Masuda*, T. Fukushige**, T. Shimobaba, T. Ito
Chiba Univ., Japan*Nagaoka Univ. of Tech., Japan**K&F Computing Res., Japan

We have implemented Computer Generated Hologram calculation into
GRAPE-DR processor. GRAPE-DR is one of multi-core processors andhas 512 processor elements. The calculation speed of the GRAPE-DR
system is about 8.8 times faster than that of CPU at 11,632 particles. It
is expected that this system will contribute to 3DTV.
3Dp - 19L

Parallel Algorithm for Computer-Generated
Hologram Calculation Using Multi-GPU Cluster
System with a Single Display Device and Infiniband
Network
N. Takada, H. Niwase, H. Araki, H. Nakayama*,
A. Sugiyama**, T. Kakue**, T. Shimobaba**, T. Ito**
Kochi Univ., Japan*VASA Entertainment, Japan**Chiba Univ., Japan

3Dp - 20L

Real-Time Time-Division Color Electroholography
Using Message Passing Interface
H. Araki, H. Niwase, N. Takada, H. Nakayama*,
A. Sugiyama**, T. Kakue**, T. Shimobaba**, T. Ito**
Kochi Univ., Japan*VASA Entertainment, Japan**Chiba Univ., Japan

We proposed a real-time time-division color electro-holography using a
USB-to-Parallel module for simple synchronous control of one-chip
RGB LED. The pro-posed system is low-priced. Host PC can directly
synchronize the lighting of one-chip RGB LED with the CGH
computation by using Message Passing Interface (MPI).
143

3D

Real-time electroholography requires the high computational
performance. The study of fast parallel computation using excellent
cost-effective and general-purpose computer system as multi-GPU
system is very important. We proposed the parallel algorithm tocompute multiple computer-generated holograms using multi-GPU
cluster system with inﬁniband network simultaneously.

Wednesday
3Dp - 21L

December 4
Improving Viewpoint Interpolation Image Quality by
Displaying Images in Stereoscopic 3D
M. Date, Y. Honda*, H. Takada, S. Ozawa, S. Mieda,
A. KojimaNTT, Japan*Nagoya Univ., Japan

Image quality of viewpoint interpolation using linear blending wasevaluated by subjective test. By displaying images in stereoscopic 3D,
image quality was signiﬁcantly improved compared with that of 2D. It
was also discovered that binocular image differences are essential forachieving this improvement.
3Dp - 22L

Accommodative Response while Gazing Moving 3D
Objects and the Effects of Aging
T. Ikeda, Y. Okada, M. Miyao
Nagoya Univ., Japan

We carried out experiments to obtain a relationship between aging andresponse speed of accommodative focus for various movements of 3D
targets. In the experiments, we measured accommodative change andpupil diameter. This study found dependency between accommodative
response and he effects of aging.
3Dp - 23L

The Degree of Recognition of the 3D Image Jumping
Out in a Very Large Disparity
T. Ohashi, T. Kojima, Y. Honda, M. Miyao
Nagoya Univ., Japan

We carried out experiments targeting about the 100 young and elderly
subjects to verify the visibility of 3D contents. Most subjects recognizedthat the 3D object projected from the screen at the parallax of 2.0.
Moreover, each of the subjects recognized the virtual image near thetheoretical condition.
3Dp - 24L

Influence of Latency on Perceived Depth with a 3D
Display Based on Monocular Motion Parallax
K. Tatehata, K. Sato, S. Yamada, S. Suyama, I. Ishii*,
H. Yamamoto
Univ. of Tokushima, Japan*Hiroshima Univ., Japan

We have developed a 3D display system based on purely motion
parallax. Use of a high speed camera enabled 1000 Hz sampling of aviewer's position. High speed sampling provides smooth pursuit to theviewer's movements. Inﬂuence of latency on perceived depth has been
investigated experimentally.

144

Wed./Thu.

December 4/5

3Dp - 25L

Analysis of the Depth of Field by Lens-Tilt Imaging
Y. Yoshida, S. Suyama, H. Yamamoto
Univ. of Tokushima, Japan

We propose a method to control the depth of ﬁeld continuously with theshooting angle and the tilted angle of the lens. This conﬁguration isderived from a practical shooting problem based on lens-tilt imaging.
The proposed method blurs objects that give double images in astereoscopic display.
3Dp - 26L

Perceived Depth Change in Edge-Based DFD
Display by Shifting Edge Pattern outside from
Overlapped Position
T. Soumiya, A. Tsunakawa, H. Yamamoto, S. Suyama,
H. Kuribayashi*
Univ. of Tokushima, Japan*Nikon, Japan

We have investigated perceived depth change by shifting edge patternhorizontally from overlapped position in edge-based DFD display.
Perceived depth dependence is almost the same when amount ofshifting edge pattern is under disparity of front and rear plane, whichindicates viewing angle can be increased by appropriate edge shift.

Thursday, December 5
9:00 - 10:15

Mid-sized Hall B

3D1: Practical 3D Systems
Special Topics of Interest on Augmented Reality and Virtual Reality
Chair:
Co-Chair:J.-Y. Son, Konyang Univ., Korea
S. Yano, Shimane Univ., Japan

3D1 - 1:
9:00

Invited 3DTV Broadcasting Technologies, Trials, andStandardization Effort in Korea
J. Kim, S. Cho, S.-H. Kim, J. S. Choi

In this paper, recent efforts on development of various 3DTV
broadcasting technologies, ﬁeld trials and standardization from Korea
will be presented. Some technical details of different schemes are
explained, followed by current status and future prospect.
3D1 - 2
9:20

A Service Compatible 3DTV Broadcasting System
Based on MPEG-2 and HEVC
S. Cho, J. Kim, S. Jeong, H.-G. Choo, J. S. Choi, J. Kim
ETRI, Korea

We propose a service-compatible 3DTV system which consists of
3DTV encoder using MPEG-2 and HEVC, auto-synchronizing 3DTV
multiplexer and 3DTV receiver. We verify in this paper that the
proposed 3DTV system guarantees higher video qualities of HDTV aswell as 3DTV than those of the current 3DTV system using AVC/H.264.
145

3D

ETRI, Korea

Thursday
3D1 - 3
9:40

December 5
Stereoscopic Display System with Integrated
Motion Parallax
M. F. Flynn, J. C. Tu
zSpace, USA

We present a description of a time sequential stereoscopic display
which separates the images using a segmented polarization switch andpassive eyewear. Additionally, integrated tracking cameras and an SDK
on the host PC allow us to implement motion parallax in real time.
3D1 - 4L
10:00

Inpainting Embedded Virtualized-Reality Indoor
Modeler
K. Thangamani, T. Ishikawa*, K. Makita, R. Ichikari,
T. Kurata
AIST, Japan*Kodo Lab, Japan

This paper discusses the integration of the inpainting algorithm with thevirtualized-reality indoor modeler. Embedding of the texture andstructure preservable inpainting method with the virtualized-reality
indoor modeler makes the whole system interactive and intuitive.
----- Break ----15:10 - 16:30

Mid-sized Hall B

3D2/VHF2: Visual Comfort for 3D Display
Chair:
Co-Chair:K. Utsugi, Hitachi, Japan
S. Clippingdale, NHK, Japan

3D2/
VHF2 - 1:
15:10

Invited Evaluation of Fatigue Caused by Watching
3DTV
T. Morita
NHK, JapanTo evaluate the fatigue caused by watching 3DTV under conditions that
resemble typical viewing situations at home, we conducted
experiments with 500 participants who watched 3D programs forapproximately one hour on commercially available 3DTVs. This report
describes the ﬁndings of fatigue caused by watching 3DTV based onthese experiments.

146

Thursday
3D2/
VHF2 - 2
15:30

December 5
An Algorithm to Reduce Background Distractions
for Improving Visual Comfort of Stereoscopic
ImagesP.-L. Sun, I.-T. Chang, N. Chang*, H. Tsao*Nat. Taiwan Univ. of S&T, Taiwan*AU Optronics, Taiwan

A fast algorithm for improving visual comfort of 3D images is proposed
to reduce contrast and sharpness of background and objects where thedisparities are considerably different to the main objects. It consists of
Focal Plane Estimation, Blurred Layer Generation and 3-Layer Image
Fusion.
3D2/
VHF2 - 3
15:50

The Effects of Viewing a Lengthy Film in
Stereoscopic on the Human Body
K. Yoshikawa, Y. Okada, T. Kojima, H. Takada*, M. Miyao
Nagoya Univ., Japan*Univ. of Fukui, JapanThe equilibrium function in humans can deteriorate when viewing
three-dimensional (3D) ﬁlms. We measured body sway and focus
distance of accommodation and convergence while subjects viewed 3D
ﬁlms. In this study, we examined the effects of a watching a long
stereoscopic ﬁlm on human equilibrium and visual accommodation andconvergence.
3D2/
VHF2 - 4
16:10

Assessing the Impact of Crosstalk on 3D Image
Quality Using EEG
Y. He, Y. Tu, L. Wang, W. Zhang*Southeast Univ., China*Shenzhen China Star Optoelect. Tech., China----- Break -----

147

3D

We investigate the impact of crosstalk on three-dimensional image
quality using Electroencephalogram and demonstrate that thepresence of crosstalk reliably elicits a measurable response in thebrain. We furthermore show that the reaction varies depending on theseriousness of crosstalk. It may be used to objectively quantify image
quality.

Thursday

December 5

16:50 - 18:10

Mid-sized Hall B

3D3: Holography
Chair:
Co-Chair:J.-W. Kim, ETRI, Korea
K. Yamamoto, NICT, Japan

3D3 - 1:
16:50

Invited New Multi-Color and Rewritable Holographic
Polymer Film for 3D Holographic Display
S. Miura, S. Kobayashi
Toyo Kohan, Japan

We have developed a new multi-color holographic polymer ﬁlm that canbe recorded and reconstructed with the ability to rewrite the image. Our
ﬁlm produces a high diffraction efﬁciency and adequate image quality.
3D3 - 2
17:10

Display Chips for Electro-Holographic Display
J.-Y. Son, C.-H. Lee*, V. P. Guschin, M.-C. Park**
Konyang Univ., Korea*Joongbu Univ., Korea**KIST, Korea

The display chips are promising display devices for hologram display,
but the diffraction pattern induced by the digital nature of the pixel arrayand the regularity in the fringe pattern of the hologram deteriorate thereconstructed image quality. To mitigate the deterioration, the image
should made smaller and brighter.
3D3 - 3
17:30

Enlargement of Viewing Zone of a Holographic
Image Generated from an Image Captured byIntegral Photography
T. Hayashi*,**, N. Hirata*,**, Y. Ichihashi*, K. Yamamoto*,
T. Kakue**, T. Shimobaba**, T. Ito***NICT, Japan**Chiba Univ., Japan

We succeeded in enlarging the viewing zone of a holographic image
which was generated from an image captured by integral photography(IP). We conﬁrmed that we could observe the image of a large viewing
zone (~15 degrees) by using a lens array having a short focal length(2.2 mm).

IDW ’13 Tutorial in Japanese
Organized by SID Japan Chapter
Tuesday, December 3, 2013
Mid-sized Hall B, 1F
Sapporo Convention Center
Detailed information is available on
http://www.sidchapters.org/japan/
148

Thu./Fri.

December 5/6

3D3 - 4
17:50

Initial Study of Vision Training Used CGH Book with
Head-Mounted Display
Q.-L. Deng, B.-S. Lin, H.-T. Chang*, P.-L. Fan**,C.-Y. Chen*
Nat. Chiao Tung Univ., Taiwan*Nat. Yunlin Univ. of S&T, Taiwan**Nat. Taipei Univ. of Education, Taiwan

A head-mounted display combined computer-generated hologram forvision training was proposed in this study. The hologram based on
modiﬁed Gerchberg–Saxton algorithm to calculate the phase
distribution of light wave in different disparity patterns, the images withthe position multiplexing are therefore successfully coded as phase
only function.
Author Interviews and Demonstrations
18:30 – 19:10

Friday, December 6
9:00 - 10:20

Mid-sized Hall B

3D4: 3D Display (1)Chair:
Co-Chair:

H. Y. Lin, Nat. Taiwan Univ., Taiwan
M. Tsuchida, NTT, Japan

3D4 - 1:
9:00

Invited Content-Aware Image Manipulations Basedon Depth of Scene
K. Utsugi, T. Naemura*
Hitachi, Japan*Univ. of Tokyo, Japan

3D4 - 2

Withdrawn

3D4 - 5L
9:20

Comfort Fusion Evaluations of a Stereo Image Pair
Using the Structure Similarity
C.-H. Wen, Y.-H. Li, N. Chang*, H. Tsao*Nat. Taiwan Univ. of S&T, Taiwan*AU Optronics, Taiwan

This paper proposes a comfort fusion approach for a stereo image pairusing the structure similarity. The experiment was conducted toinvestigate the comfort fusion of stereo image pairs in terms ofStructure Similarity and Peak Signal-to-Noise Ratio. Results indicatedthat there were different criteria for 3D to conventional 2D.
149

3D

We studied techniques of computer aided artistic manipulation for
depth cue representation and introduce two of them in this work: (1)stereo image retargeting to change the image aspect ratio while
preserving depth, and (2) multi-perspective rendering to exaggerate
pictorial depth cue in a manner analogous to hand-drawn illustrations.

Friday
3D4 - 3
9:40

December 6
A Time-Division Multiplexing Parallax Barrier
System with Wider Viewing Zone
Q. Zhang, H. Kakeya
Univ. of Tsukuba, Japan

We propose a 4-view parallax barrier system based on time-divisionmultiplexing that shows full resolution per view, and apply it as a 2-view
system with wider viewing zone. We also reduce ﬂickers of 4 timedivision system under 120 Hz by applying time-division anaglyph andadjusting the width of parallax barrier.
3D4 - 4
10:00

Optimized 3D Still-Gamma to Perform Better 3D
Quality in a 120 Hz Frame Rate Display
C. Ho, Y. Jin, S. Syu, Y. Chen, C. Li
Shenzhen China Star Optoelect. Tech., China

In this paper, CSOT will show a method that can reduce 3D crosstalk,and remove ﬂash or scanning function in a 3D display backlight unit. B/Wcrosstalk is less than 0.15%; average G2G crosstalk is less than 5%.
This method could reduce BLUʼs cost and get better 3D image quality.
----- Break ----10:40 - 11:55

Mid-sized Hall B

3D5: 3D Display (2)Chair:
Co-Chair:S. Miura, Toyo Kohan, Japan
H. Yamamoto, Tokushima Univ., Japan

3D5 - 1:
10:40

Invited Study of Designated Eye Position andViewing Zone for Two-View Autostereoscopic 3D
Displays
K.-C. Huang*,**, Y.-H. Chou**,L.-C. Lin**, H. Y. Lin*,
F.-H. Chen**, C.-C. Liao**,Y.-H. Chen**, K. Lee**,W.-H. Hsu*
*Nat. Taiwan Univ., Taiwan**ITRI, Taiwan

Designated eye position and viewing zone are important opticalparameters in designing two-view autostereoscopic displays. We
propose novel evaluation metrics based on equivalent luminance andbinocular luminance to ﬁgure out both parameters. Simulation results
prove the usefulness of our proposed metrics in effectiveness andaccuracy of 3D metrology.

150

Friday
3D5 - 2
11:00

December 6
Modification of Lenslet Shape of Lenticular Lens
Array for Auto-Stereoscopic Multi-View Display
F. Mukhtarov, S. D. Hwang
Samsung Elect., Korea

Multi-focus and elliptic cylindrical lenslet concept for lenticular lensarray show us promised diffuser-free solutions for auto-stereoscopic
multi-view display, which is not only decrease cost and complicity ofglasses-free 3D TV set, but also improves image quality: increase
image contrast ratio and decrease multi-view crosstalk.
3D5 - 3
11:20

A Novel Electrode Structure of LCL Lens Designed
for 55-in. 3D/2D Switchable Auto-Stereoscopic
Display
Q. S. Liao, C. M. Yang, C. W. Chen, C. C. Hsiao
Shenzhen China Star Optoelect. Tech., China

We proposed a liquid-crystal-lenticular (LCL) lens for 55-in. 3D/2D
switchable auto-stereoscopic display. A novel electrode structure was
employed to obtain a parabolic effective refractive index (neff) proﬁle.
The measured neff proﬁle matched well with simulated proﬁle.
Moreover, the distinction of each electrode control the neff proﬁle wasinvestigated.
3D5 - 4L
11:40

Super Multi-View Display with 1-mm-pitch
Viewpoints and Accommodation Measurements
Y. Toda, J. Takagi, Y. Takaki
Tokyo Univ. of A&T, Japan

A viewing-zone scanning super multi-view display was optimized toenable low-crosstalk generation of viewpoints with a pitch of 1 mm. The
accommodation measurements show that accommodation wasappropriately evoked when three-dimensional images were displayed
at distances of 500 - 750 mm from viewers.
----- Lunch -----

3D

Author Interviews and Demonstrations
16:40 – 17:20
Supporting Organizations:
3-D Image Technology Research Group, ITE
Holographic Display Artists and Engineers Club151

Wednesday

December 4Workshop on
Applied Vision and Human Factors
Wednesday, December 4
13:40 - 16:40

Main Hall C

Poster VHFp1: Applied Vision and Human Factors (AR)Special Topics of Interest on Augmented Reality and Virtual Reality
VHFp1 - 1

A Cognitive Model for Fast Recognition in Images
Displayed by Automotive Augmented Interface
Systems
H. Hasegawa, S. Yano, S. Okabayashi, T. Wake*
Meijo Univ., Japan*Kanagawa Univ., Japan

We have proposed and veriﬁed a new cognitive model, called “Mental
Expansion”, to explain the superiority of automotive Augmented Reality
Interface Systems (ARIS) incorporating AR technologies, over otherautomotive display systems based on visual optical experiments.
13:40 - 16:40

Main Hall C

Poster VHFp2: Applied Vision and Human Factors
VHFp2 - 1

Kansei Evaluation of Skin Colors under Different
Color Temperatures of White LEDs
C.-J. Chou, J.-W. Huang, H.-S. Chen
Nat. Taiwan Univ. of S&T, Taiwan

The aim of this study is to ﬁnd the emotional relationships between skincolors and white LEDs. The skin color samples were evaluated under
different conditions of white LEDs and simulated daylights.
Psychophysical experiment was conducted to investigate color
emotional responses of skin colors.
VHFp2 - 2

Calculated and Measured Values of the HelmholtzKohlrausch Effect in Natural Images
T. Shizume, G. Ohashi, Y. Onuki, H. Takamatsu*,
Y. Shimodaira
Shizuoka Univ., Japan*NEC Display Solutions, Japan

In this study, we propose a derivation method of the HelmholtzKohlrausch effect in natural images. The calculated values are derived
by the prediction equation of the Variable-Chromatic-Color method
adapted to natural images. It conﬁrmed the effectiveness of thecalculated values by comparing it with the measured values.

152

Wednesday
VHFp2 - 3

December 4
Evaluation of Color Channels and Gamut in OLED
RGB to RGBW Conversions
J.-W. Huang, C.-J. Chou, H.-S. Chen, R. Luo*Nat. Taiwan Univ. of S&T, Taiwan*Univ. of Leeds, UK

VHFp2 - 4

Evaluation of Brightness and Visual Comfort of LED
Light Fixtures
T.-X. Lee, H.-Y. Sung, C.-H. Wen, S.-W. Hsu*, C.-H. Chen*
Nat. Taiwan Univ. of S&T, Taiwan*ITRI, Taiwan

This study was to evaluate lighting quality of LED light ﬁxture based onhuman visual perception. We present the perceived brightness andvisual comfort under different LED stimuli and surrounding lighting
conditions. An evaluation model is established and the rendered image
represents the brightness information for LED light ﬁxture.
VHFp2 - 5

Evaluation of Motion Artifacts on OLED TVs
J.-H. Bae, C.-M. Yang, K.-S. Shin, H.-S. Jang, C.-W. Kim
Univ. of Inha, Korea

In this paper, quantitative measures of motion induced artifacts on
OLED TVs are determined based on a small set of measurements
using a pursuit camera and simulations based on colorimetricmodeling. Performance of the proposed measure is veriﬁed bycomparing calculated values of measures and results of human visualexperiments.
VHFp2 - 6

Effects of 3D Display on Change Detection Task andSubjective Task Difficulty
Y. Masakura, T. Tamura*, S. Ohno
Tokyo Univ. of Tech., Japan*Tokyo Polytechnic Univ., Japan

We examined effects of 3D display on performance for change
detection task using spatial CG images comparing with those of 2D
display. We found that displacement in 2D would be easier to be
detected than displacement in 3D. We also found that subjective task
difﬁculty could signiﬁcantly affect the task performance.

153

VHF

The 3D LAB color gamuts of RGBW-based OLED under varying
ambient lighting conditions were evaluated. The performances of RGBto-RGBW conversion algorithms were approached in terms of imageʼs
color channels and 3D LAB color gamut. The RGB to RGBW
conversions at different RGB stages were also discussed in this study.

Wednesday
VHFp2 - 7

December 4
A Method for Quantitative Assessment of Elderly
Cognitive Function While Driving
K. Miyabe, Y. Ogura, H. Yamasaki, M. Yamada,
S. Yamamoto, T. Nakano
Meijo Univ., Japan

Almost elderly trafﬁc accidents are caused by decrease in cognitive
function (attention, etc.). We have developed the method for measuring
and evaluating cognitive function while driving and have constructed
the new driving simulator. Some experiments by elderly drivers havelargely showed the effectiveness of this method and driving simulator.
VHFp2 - 8L

Comparison of Visual Fatigue When Reading on
Electronic Paper and Tablet LCDs
H. Isono, H. Yaguchi
Tokyo Denki Univ., Japan

We conducted comparison testing of visual fatigue when subjects readfor 90 minutes using electronic paper and tablet LCDs by means ofobjective evaluation and subjective evaluation. The results clearly
indicated that visual fatigue was greater when reading using a tablet
LCD in comparison with electronic paper.
VHFp2 - 9L

Effect of Blue Light on Visual Fatigue When Readingon LED-Backlit Tablet LCDs
H. Isono, A. Kumar*, T. Kamimura, Y. Noguchi,
H. Yaguchi
Tokyo Denki Univ., Japan*IIT-H, India

We examined the visual fatigue caused when reading on LED-backlit
tablet LCDs in white and sepia background. The results indicate thatwhen we switch from white to sepia background, the eye strain
reduces, suggesting that the high intensity blue light emitted from LEDbacklit tablet LCDs adds to visual fatigue.
VHFp2 - 10L A Novel Method of Display Evaluation throughDevelopment of Image-Measurement-Based Metric
M. W. Lee, S. A. K. Ha, H. H. Park, J. H. Kim
Samsung Elect., Korea
Purpose of this study is to propose a novel method of display
evaluation which modiﬁes the procedure of appearance-based metricspeciﬁed in ISO19751. An image-measurement-based metric is
developed with 2D colorimetric-device. It provides a measurement ofobjective display performance as well as the image quality attributes ofdigital images perceived.

154

Thursday

December 5
Thursday, December 5

13:30 - 14:45

Mid-sized Hall B

DES4/VHF1: Sensing Technologies for Virtual/Augmented Reality
Special Topics of Interest on Augmented Reality and Virtual Reality
M. Kanbara, Nara Inst. of S&T, Japan
J. Bergquist, Nokia, Japan

DES4/
VHF1 - 1:
13:30

Invited Position and Direction Estimation System ofUser’s Viewpoint for Wide Indoor Environment
M. Kanbara
Nara Inst. of S&T, Japan

This paper introduces real-time viewpoint estimation system withinvisible markers for wide indoor area. The system can estimate theposition and direction of user's viewpoint precisely by afﬁxing
wallpapers containing printed invisible markers on ceilings. This system
can be applied to augmented reality, view depended display or humanrobot interaction.
DES4/
VHF1 - 2
13:55

Useful Field of View in Augmented Reality:
Comparison Between Distribution of Attention
Under Binocular and Monocular Observation
A. Kitamura, H. Naito, T. Kimura*, K. Shinohara,
T. Sasaki**, H. Okumura**
Osaka Univ., Japan*Kansai Univ. of Welfare Scis., Japan**Toshiba, Japan

We conducted two experiments to compare binocular and monocularobservations when an Augmented Reality image was presented during
a useful ﬁeld of view (UFOV) task. We found the detection of aluminance change in the peripheral ﬁeld of view was more difﬁcult
under binocular AR observation than under monocular observation.
DES4/
VHF1 - 3:
14:15

Invited e-Heritage, Cyber Archaeology, and Cloud
MuseumT. Oishi, K. Ikeuchi
Univ. of Tokyo, Japan

This paper summarizes our research project, e-Heritage, to digitize
cultural heritage assets over the world. We also propose cyberarchaeology that provides new ﬁndings based on the digital analysis on
those data. e-Heritage data is uploaded to cloud as well asarcheological ﬁndings for a comprehensive visualization system.
----- Break -----

155

VHF

Chair:
Co-Chair:Thursday

December 5

15:10 - 16:30

Mid-sized Hall B

3D2/VHF2: Visual Comfort for 3D Display
Chair:
Co-Chair:K. Utsugi, Hitachi, Japan
S. Clippingdale, NHK, Japan

3D2/
VHF2 - 1:
15:10

Invited Evaluation of Fatigue Caused by Watching
3DTV
T. Morita
NHK, JapanTo evaluate the fatigue caused by watching 3DTV under conditions that
resemble typical viewing situations at home, we conducted
experiments with 500 participants who watched 3D programs forapproximately one hour on commercially available 3DTVs. This report
describes the ﬁndings of fatigue caused by watching 3DTV based onthese experiments.
3D2/
VHF2 - 2
15:30

An Algorithm to Reduce Background Distractions
for Improving Visual Comfort of Stereoscopic
ImagesP.-L. Sun, I.-T. Chang, N. Chang*, H. Tsao*Nat. Taiwan Univ. of S&T, Taiwan*AU Optronics, Taiwan

A fast algorithm for improving visual comfort of 3D images is proposed
to reduce contrast and sharpness of background and objects where thedisparities are considerably different to the main objects. It consists of
Focal Plane Estimation, Blurred Layer Generation and 3-Layer Image
Fusion.
3D2/
VHF2 - 3
15:50

The Effects of Viewing a Lengthy Film in
Stereoscopic on the Human Body
K. Yoshikawa, Y. Okada, T. Kojima, H. Takada*, M. Miyao
Nagoya Univ., Japan*Univ. of Fukui, JapanThe equilibrium function in humans can deteriorate when viewing
three-dimensional (3D) ﬁlms. We measured body sway and focus
distance of accommodation and convergence while subjects viewed 3D
ﬁlms. In this study, we examined the effects of a watching a long
stereoscopic ﬁlm on human equilibrium and visual accommodation andconvergence.

156

Thu./Fri.

December 5/6
Assessing the Impact of Crosstalk on 3D Image
Quality Using EEG

3D2/
VHF2 - 4
16:10

Y. He, Y. Tu, L. Wang, W. Zhang*Southeast Univ., China*Shenzhen China Star Optoelect. Tech., China

Author Interviews and Demonstrations
18:30 – 19:10

Friday, December 6
9:00 - 10:15

Meeting Room 204

VHF3: Improving Visual Experience
Chair:
Co-Chair:T. Kurita, NHK, Japan
A. Yoshida, Sharp, Japan

VHF3 - 1:
9:00

Invited Using Image Dimension Dissection to Study
Viewer Preferences of Luminance Range in
Displayed Imagery
S. Daly, T. Kunkel, S. Farrell
Dolby Labs., USA

A viewer preference study was performed to ﬁnd how much luminancerange High Dynamic Range (HDR) displays should have. Careful
experimental design bypassed hardware limitations such as absolute
range, signal limitations such as quantization and clipping, andperceptual effects such as simultaneous contrast, Stevenʼs effect,
Hunt effect, and sharpness-contrast interactions.
VHF3 - 2:
9:30

Invited UHDTV Systems for Wide-Gamut Color
Reproduction
K. Masaoka, T. Soeno, T. Yamashita, Y. Nishida,
M. Sugawara
NHK, Japan

ITU-R Recommendation BT.2020 speciﬁes wide-gamut system
colorimetry for ultra-high deﬁnition television (UHDTV). The color gamut
covers most object colors. This paper introduces the design process of
our proposal to the ITU-R standard system colorimetry for UHDTV andthe development of our 8K camera and laser projector.

157

VHF

We investigate the impact of crosstalk on three-dimensional image
quality using Electroencephalogram and demonstrate that thepresence of crosstalk reliably elicits a measurable response in thebrain. We furthermore show that the reaction varies depending on theseriousness of crosstalk. It may be used to objectively quantify image
quality.

Friday
VHF3 - 3L
10:00

December 6
Real-Time Virtual Fitting System by Using Morphingwith Skeletal Tracking
W. Naya, K. Fukumoto, T. Yamamoto, Y. Dobashi
Hokkaido Univ., Japan

We propose a real-time animation technique for virtual ﬁtting
applications. Our method uses key ﬂames ﬁnding from a databasewhich uses skeletal data as a search key, and then create in-between
images by using morphing processing.
----- Break ----10:40 - 12:10

Meeting Room 204

VHF4: Visual Perception
Chair:
Co-Chair:S. Daly, Dolby Labs., USA
K. Masaoka, NHK, Japan

VHF4 - 1:
10:40

Invited Surface Quality and Material Perception
S. Nakauchi
Toyohashi Univ. of Tech., Japan

This article reviews recent research on surface quality and material
perception which attempt to reveal how the visual system identify thematerial properties and infer the surface quality of various materials
including glossiness and translucency. Also pearl quality measurement
is also mentioned as one of the technological applications.
VHF4 - 2
11:10

Higher Resolution Stimulus Enhances Depth
Perception Even When the Resolution Difference isUndetectable
Y. Tsushima, K. Komine, Y. Sawahata, N. Hiruma
NHK, Japan

We recently make remarkable progress in spatial resolution of acomputer display. However, it is unclear how high resolution stimulus
affects our perception. Here, we examined the relationship between the
resolution and depth perception. We found that higher resolution
stimulus facilitates depth perception even when the resolutiondifference is undetectable.
VHF4 - 3
11:30

Evaluating CIE Unified Glare Rating of a Scene
Using a Panoramic Camera
P.-L. Sun, H.-C. Li, P. GreenNat. Taiwan Univ. of S&T, Taiwan

A camera-based system was developed to estimate CIE Uniﬁed Glare
Rating (UGR) in a panoramic scene. It consists of a geometriccalibration, a color characterization model for multi-exposure images
and a modiﬁed watershed image segmentation to determine thecontribution of each light sources and reﬂected objects.

158

Friday
VHF4 - 4
11:50

December 6
Simulation of Ambient Light Impact on Public
Displays
S. Maeda, Y. Inoue, T. Sasagawa
Mitsubishi Elec., Japan----- Lunch ----13:30 - 15:00

Meeting Room 204

VHF5: Color
Chair:
Co-Chair:Y. Tani, Toyohashi Univ. of Tech., Japan
Y. Shimodaira, Shizuoka Univ., Japan

VHF5 - 1:
13:30

Invited Quantifying Observer and Display
Metamerism Effects When Evaluating Accuracy of
Spot Color Matching in Mixed Media Presentations
T. Lianza
X-rite, USA

The growth of the mobile display market naturally leads to the migrationof critical color viewing applications on the mobile platform. Differencesin geometry and spectral characteristics of displays complicate thecritical evaluation of color. This paper examines some of the factors that
affect evaluation.
VHF5 - 2
14:00

New Generation of Optics for Imaging
Video-colorimetry: Application to OLED Displays
P. Boher, T. Leroux, T. Bignon, V. Collomb-Patton
ELDIM, France

OLED displays are not perfect and require additional color calibration
to improve their performances. Indeed OLED technology suffers fromhomogeneity problems with variations of the emissive properties within
the same display or from on display to the other. We present newimaging optics dedicated to this type of calibration.
VHF5 - 3
14:20

Color Treatment Index: A New Metric for Mobile
Displays
S. L. Yang
AU Optronics, Taiwan

We develop a Color Treatment Index (CTI) to deﬁne the level of color
treatment. This index can judge the effective color gamut under
different color treatment base on the locus the 24 color checker and themapping to effective color gamut value.

159

VHF

This study relates to the screen displays installed indoor or outdoor in
public areas. More particularly, the study is intended to visually andquantitatively predict the reﬂected glare caused by light fromilluminations and sun beams that disturbs the display of contents on
the screens.

Friday
VHF5 - 4
14:40

December 6
A Self-Adaptive Method for Image Enhancement
Based on CIELAB Color Difference Analysis
L.-X. Chen, C.-T. Kang
Shenzhen China Star Optoelect. Tech., China

We propose a new method for image enhancement which is based oncolor difference analysis. According to XYZ stimulus of LCD panel,matrix of RGB grays can be transferred to ∆E*ab matrix. With a special
threshold of ∆E*ab and a median ﬁlter, the enhancement can beachieved.
----- Break ----15:10 - 16:10

Meeting Room 204

VHF6: Display Parameters and Human Performance
Chair:
Co-Chair:T. Lianza, X-rite, USA
Y. Hisatake, Japan Display, Japan

VHF6 - 1
15:10

Visual Search of Colour Patches Shown on a Tablet
ComputerJ.-Y. Wu, L.-C. Ou
Nat. Taiwan Univ. of S&T, Taiwan

This study found that the following factors may affect reaction time forlocating a target colour surrounded by 23 colour chips shown on atablet computer: (a) mean colour difference between target andsurrounding colours, (b) colour variation between surrounding colours,and (c) location of target shown among surrounding colours.
VHF6 - 2
15:30

Theoretical Derivation of AccommodationOptimized Line Space for Actual Documents in
Kanji Characters
N. Ishikawa, T. Miyata, T. Matsui
Gunma Univ., JapanThe already-proposed framework, which estimates the optimal line
space length to make documents the most legible in terms ofaccommodation, is applied to actual documents in which identical Kanjicharacters form sentences. Consequently, it is shown that thetheoretical optimal line space lengths are nearly equal to thepsychological ones.

160

Friday
VHF6 - 3
15:50

December 6
Characterization of Methods for Resolution andNoise in Medical Displays
A. Yamazaki*,**, C.-L. Wu*, W.-C. Cheng*, A. Badano**U.S. Food and Drug Admin., USA**Nagoya Univ., Japan

Author Interviews and Demonstrations
16:40 – 17:20
Supporting Organizations:Technical Group on Information Display, ITE
Technical Committee on Electronic Information Displays, Electronics
Society, IEICE

Demonstration Session
Augmented Reality and Virtual Reality(AR & VR)
by 3D, VHF, PRJ, DES and INP Workshops
Thursday, December 5, 2013
14:50 – 17:50
Main Hall C, 1F
161

VHF

This study characterizes the resolution and noise for liquid crystal
displays and organic light-emitting diode displays in workstation andhandheld formats, and for a stereoscopic display with consistentmethodologies including luminance and viewing-distance factors, anddemonstrates the applicability of the methods for various display
technologies.

Wednesday

December 4Workshop on Projection and Large-Area
Displays and Their Components
Wednesday, December 4
14:00 - 15:00

Mid-sized Hall B

PRJ1: Projection AR
Special Topics of Interest on Augmented Reality and Virtual Reality
Chair:
Co-Chair:

D. Cuypers, imec, Belgium
S. Shikama, Setsunan Univ., Japan

PRJ1 - 1:
14:00

Invited Wearable Communication Device Leads the
Future of Optical Technology
M. Takaso, K. Suzuki, T. Iguchi
Telepathy, USA

The evolution of computing has been occurring in changes in the actual
display and how the user can interface with and communicate. Telepathy
has been targeting to be the ﬁrst wearable communication device, andoptics out of all the technologies supporting Telepathy, will make itpossible to be the one.
PRJ1 - 2:
14:20

Invited Projector-Based Augmented Reality in
Medicine
T. Nakaguchi
Chiba Univ., Japan

Although laparoscopic surgery has substantial merits for patients, it
makes the surgical procedure much difﬁcult and gives large burden on
physicians. Since AR technologies have a potential to address these
problems, we will present current situation and future problem of the
projector-based AR system in Medicine.
PRJ1 - 3:
14:40

Invited Projection Mapping Technology andAdvanced Optical Features of Digital Projectors
H. Yoshida, M. Hanzawa, P. Salvini*, R. Anthony*Christie Digital Syss., Japan*Christie Digital Syss., Canada

Projection mapping is getting a big boom around the world. And most
big mapping events use over 20,000 lumen, Xenon lamp based
Christie projectors. Automatic color management tools, warping andblending functions, and product reliability, etc. are assessed by wellknown mapping designers. Describe the current projection mapping
technology and projector features for projection mapping.
----- Break -----

162

Wednesday

December 4

15:40 - 17:20

Small Hall

PRJ2: Projection Components
Chair:
Co-Chair:T. Suzuki, JVC Kenwood, Japan
Y. Asakura, Nittoh Kogaku, Japan

PRJ2 - 1
15:40

Surface Structure Light Guide for See-Through High
Performances True AR Glasses
K. Sarayeddine, K. Mirza
Optinvent, France

PRJ2 - 2
16:00

Demonstration of a Compact See-Through HeadMounted Display with Light Guide Plate
H.-C. Hung*, C.-W. Chiang*, Y.-K. Hsu*, Y.-J. Chen*,
Y.-C. Huang*, J.-W. Pan*,***Nat. Chiao Tung Univ., Taiwan**Chi Mei Medical Ctr., Taiwan

The key design of this invention is the see-through HMD based on lightguide plate with trapezoid microstructures. With this design, we could
offer a much extremely compact comparing to the traditional HMD. The
HMD serve as the near-eye viewing optics that magniﬁes the image
which is displayed through a microdisplay.
PRJ2 - 3
16:20

Reducing the Fringing Field Effect of Phase-Only
Spatial Light Modulator for Holographic Display
L. Yang, J. Xia, X. Zhang, B. Wang
Southeast Univ., China

The fringing ﬁeld effect in a high resolution phase-only spatial light
modulator is studied. A novel structure of local electric ﬁeld
enhancement and dielectric separation is proposed to reduce theeffect. It is conﬁrmed by numerical simulation.
PRJ2 - 4
16:40

Beam-Steering in Hollow Distributed Bragg
Reflector Waveguides for RGB Imaging
M. Nakahama, X. Gu, H. Sumimoto, F. Koyama
Tokyo Inst. of Tech., JapanA new type of 1D beam deﬂector based on a hollow Bragg reﬂector
waveguide for RGB colors was proposed. Large steering range ispossible by only 100 nm change in the hollow core thickness. Ultrasmall divergence angle and super-high resolution are expected for
device lengths shorter than 1 cm.

163

PRJ

Digital eyewear (or AR Glasses) allowing hands-free mobile computing
applications is a new product category in the world of wearable
displays. It will enable many yet unimagined “always-on” hands freemobile applications including geo-localization (GPS), sports,
messaging, situation awareness, and more. This paper is an overview
of various digital eyewear display technologies.

Wed./Thu.

December 4/5

PRJ2 - 5
17:00

Suppression of Flicker in Analog LCOS Panels
Using Al2O3/SiO2 Alignment Layers
D. Cuypers*,**, H. D. Smet*,***imec, Belgium**Ghent Univ., Belgium

Analog driven LCOS panels can exhibit ﬂicker due to Vcom offset
rooted in both electro-chemical reactions at the interfaces and ionic
impurities in the liquid crystal. A possible solution is offered where a
combined alignment layer and suitable barrier layer is obtained in asingle step using oblique evaporation.
Author Interviews and Demonstrations
17:20 – 18:00

Thursday, December 5
9:00 - 10:20

Small Hall

PRJ3: Projection Technologies
Chair:
Co-Chair:F. P. Shevlin, DYOPTYKA, Ireland
H. Kanayama, Panasonic, Japan

PRJ3 - 1:
9:00

Invited How the Environmental Changes in
Projection Display Market?
T. Suzuki, K. Kusumoto
Techno Syss. Res., Japan

Projector Market has been growing since it appeared, especially foreducation/business use, and makers has been enjoying its market
growth. However, it is now remarkable that projector market
environment has been changing. This report will focus on the changesof Projector market and its external environment.
PRJ3 - 2:
9:20

Invited Color Performance Evaluation of Different
Business Projector Architectures
B. Maximus, M. Tarpan, H. Nakano*
Barco, Belgium*Barco, JapanFor business projectors, the brightness speciﬁcation (lumens) is mostimportant, but it may be required to provide colorful images as well.
This subject is typically covered by color gamut speciﬁcations, but thispaper wants to stress the additional importance of primary color
brightness to achieve the best image quality.

164

Thursday
PRJ3 - 3
9:40

December 5Interactive Laser Pico-Projection System Using a
Fiber Bundle Combiner for Wavelength and Image
Multiplexing
M. Ide, S. Fukaya, K. Yoda
Citizen Holdings, Japan

We present a novel interactive laser pico-projection system using aﬁber bundle combiner for wavelength and image multiplexing. The
projection system simultaneously employs both RGB imaging andnear-infrared depth sensing capabilities by using a single scanning
MEMS mirror with a near-infrared camera.
PRJ3 - 4
10:00

Liquid Cooling High Power Laser Phosphor Light
Source for Digital Projection

PRJ

K. Li
Wavien, USA
This paper describes liquid cooling of phosphor in sealed chambers forhigh efﬁciency operations. For higher power operation suitable for
digital cinema, a liquid suspension of phosphor is used for screen
brightness of over 30,000 lumens. The aging issues of phosphor canalso be solved by using replacing phosphor cartridges.
----- Break ----10:40 - 12:20

Small Hall

PRJ4: Laser & Speckle Reduction
Chair:
Co-Chair:B. Maximus, Barco, Belgium
T. Yagi, Mitsubishi Elec., Japan

PRJ4 - 1
10:40

Speckle Contrast Measurement in Arbitrary
Observation DistanceT. Fukui, K. Suzuki, S. Kubota
Oxide, Japan

Speckle contrasts of laser projectors were measured at various
observation distances using a quantitative measurement technique.
Measured speckle contrast functions were found to be different byprojection architectures. The result was analyzed theoretically andapplied to the new instrument for practical qualiﬁcations in arbitraryobserversʼ position.

165

Thursday
PRJ4 - 2
11:00

December 5
Study of Microcapsule Diffuser for Speckle
Reduction in Laser Display
S. Okagaki, J. Kondo, K. Kojima, Y. Nakano, A. Miyata,
K. Kubo, Y. Yoshida
Mitsubishi Elec., JapanThe authors propose a microcapsule diffuser to reduce the speckle
noise generated in laser display. The microcapsule contains light
diffusion particles that are electrically charged. Since the particles canmove within the microcapsule because of the electrical ﬁeld in it, theproposed device reduces speckle noise.
PRJ4 - 3
11:20

Speckle-Reduced Zoomable Holographic Projection
H. Yamanashi, T. Shimobaba, T. Kakue, M. Oikawa,N. Okada, Y. Endo, R. Hirayama, N. Takada*, T. Ito
Chiba Univ., Japan*Kochi Univ., Japan

In this paper, we demonstrate a speckle-reduced zoomable holographic
projection. This holographic projection realizes the zoom function using
a numerical method, called scaled Fresnel diffraction. In addition, thespeckle noise of projected images is reduced by the combination of
optimized holograms, a low-speckle laser and a vibrating multi-mode
ﬁber.
PRJ4 - 4
11:40

Speckle Reduction for Illumination with Lasers andStationary, Heat Sinked, Phosphors
F. P. Shevlin
DYOPTYKA, Ireland

DYOPTYKA's innovative solution for the reduction of speckle, using aphase-randomizing deformable mirror, is shown to perform well in an
illumination system where at least one of the color primaries is a laser
which is also used to excite ﬂuorescence of other wavelengths from a
volume of stationary, heat-sinked, phosphor.
PRJ4 - 5
12:00

Reliability Study on High Power 638 nm Broad
Stripe LD with a Window-Mirror Structure
T. Yagi, H. Mitsuyama, T. Nishida, K. Kadoiwa
Mitsubishi Elec., Japan

Reliability of high power 638 nm broad stripe LD with a window-mirror
structure was studied. Though the LD has a measure to COD, it shows
the COD at over-drive condition. The results unveiled that MTTF due to
COD is proportional to optical density to the power of -3.2.

166

Thursday

December 5

12:20 - 12:35

Small Hall

Short Presentation PRJp: Projection
All authors of poster papers for the PRJp session will give a brief,
3-minute oral presentations with no discussion time in advance.
----- Lunch ----14:50 - 17:50

Main Hall C

Poster PRJp: Projection
Development of a Laser Head-Up Display with
Multi-Event Information

PRJ

PRJp - 1

C.-Y. Chen, Q.-L. Deng*, Y.-C. Chen**, M.-C. Chou**,
K.-Y. Chiu, C.-C. Su, P.-J. Wu*
Nat. Yunlin Univ. of S&T, Taiwan*Nat. Chiao Tung Univ., Taiwan**ITRI, Taiwan
The wide laser head-up display is proposed in this study. A set of
mirrors is ﬁrst equipped in front of a laser projector, dividing the image
into three images with the angle 122 . A projection lens is thendesigned to project the images onto the windshield with the distances
160 cm.
PRJp - 2

A Collimated Illumination Beam Design for Compact
Projection System
C.-H. Lin, C.-Y. Hung, Y.-H. Chang, W.-C. Su*
Nat. Yunlin Univ. of S&T, Taiwan*Nat. Changhua Univ. of Education, Taiwan

A system including diffusers, concave lenses, condenser lenses and apair of microlens arrays is designed to expand the light source of 4 4green lasers (λ= 532 nm) to a approximately collimated illumination
beam which area is 122 mm x 116 mm and suitable for pico-projector
applications.
PRJp - 3

A Study of Optical Design of Local Dimming
Projector with Liquid Crystal Elements
W.-T. Li, Y.-C. Chen, Y.-C. Fang
Nat. Kaohsiung First Univ. of S&T, Taiwan

This study is to improve the contrast of the projector lighting design.
The structural design of the projector is using telecentric of opticaldesign. Liquid crystal lens array as a light source with a local dimming
system. The projector of Contrast achieve substantial improvement in
the imaging chip components.
PRJp - 4

Withdrawn

167

Thursday
PRJp - 5

December 5
Full Color Image in a Holographic Head-Mounted
Display
W.-C. Su, L.-P. Chen, H.-T. Lin
Nat. Changhua Univ. of Education, Taiwan

In this paper, we propose a see-through head mounted display (HMD)
system implemented with a holographic optical elements (HOE) in
polymer-dispersed-liquid-crystal (PDLC). With the light diffracting fromtwo HOEs in correct position and angel successively, a full-color image
without dispersion has been successfully demonstrated.
Author Interviews and Demonstrations
18:30 – 19:10
Supporting Organizations:Technical Group on Information Display, ITE
Laser Display Technology Research Group, Optical Society of Japan

EXHIBITION
12:40 – 18:00 Wednesday, Dec. 4, 2013
10:00 – 18:00 Thursday, Dec. 5, 2013
10:00 – 14:00 Friday, Dec. 6, 2013
Lobby, 1F
Sapporo Convention Center

Demonstration Session
Augmented Reality and Virtual Reality(AR & VR)
by 3D, VHF, PRJ, DES and INP Workshops
Thursday, December 5, 2013
14:50 – 17:50
Main Hall C, 1F
168

Wednesday

December 4Workshop on Electronic Paper
Wednesday, December 4
14:00 - 15:25

Meeting Room 204

EP1: New Displays
Chair:
Co-Chair:T. Fujisawa, DIC, Japan
M. Higuchi, NIMS, Japan

EP1 - 1:
14:00

Invited Trend of Ch-LCD e-Paper Technologies
J. Chen, J.-W. Shiu, C.-C. Tsai, W.-W. Chiu, C.-Y. Huang
ITRI, Taiwan

EP1 - 2
14:25

Reverse-Type TN-LCD with Reflective Mode
Showing Permanent Memory Display and Excellent
Moving Picture Quality
Y. Toko, K. Kato, R. Takahashi*, T. Takahashi*
Stanley Elec., Japan*Kogakuin Univ., Japan

A novel dual mode LCD was developed for high energy-efﬁcient image
display. The ﬁrst mode is a memory mode in which images are
rewritten by applying the vertical or the horizontal electric ﬁelds. The
second mode is a moving picture mode that is operated by applying ahorizontal electric ﬁeld.
EP1 - 3
14:45

Novel Thermal Recording Medium Enabling Both
Emissive and Reflective Multicolor Representations
Consisting of Leuco Dyes and Luminescent
Molecules
K. Nakamura, Y. Kobayashi, K. Kanazawa, N. Kobayashi
Chiba Univ., Japan

Multi-functional composite ﬁlms showing thermoresponsive absorption
and emission was demonstrated by using thermochromic leuco dyes,
developer and luminescent molecules. The composite ﬁlms enabledcontrol of the coloration and emission by thermal stimuli, resulting in
multicolor dual mode representation.

169

EP

Ch-LCD with advantages of bi-stability, good color and multiple
addressing methods, has become one of the attractive technologies fore-paper. This paper summarizes status of research and productactivities for various applications. The results in ITRI on conformal
multi-color display, and i2R e-paper for card usage are also revealed.

Wednesday
EP1 - 4
15:05

December 4
Alternating-Current-Driven
Electrochemiluminescence for Solution-BasedMulticolor Light-Emitting Device
T. Nobeshima, M. Nakakomi, K. Nakamura,
N. Kobayashi
Chiba Univ., Japan

Emission color tuning of electrochemiluminescence (ECL) cell wasdemonstrated. This color tuning was conducted with modulation of thevoltage or the frequency of AC voltage applied to a single ECL cell
containing two luminescent molecules. Such ECL device is introduced
as a unique and novel light-emission device has high productivity.
----- Break ----15:40 - 17:10

Meeting Room 204

EP2: Electrochromic Displays
Chair:
Co-Chair:N. Kobayashi, Chiba Univ., Japan
Y. Toko, Stanley Elec., Japan

EP2 - 1:
15:40

Invited Flexible Electrochromic Display
T. Yashiro, Y. Okada, Y. Naijoh, S. Hirano, T. Sagisaka,
D. Gotoh, M. Inoue, S. C. Kim, K. Tsuji, H. Takahashi,
K. Fujimura
Ricoh, Japan

We have developed Electrochromic materials that show various colors
based on bi-pyridine compounds. These are adsorbed on the surface ofnanostructured Ttitanium dioxide layer as a Grätzel cell structure by
low-temperature solution-process. By utilizing ﬂexible TFT, we havedemonstrated full-color ﬂexible electronic papers.
EP2 - 2:
16:05

Invited Silver Deposition Based Electrochromism asa Color e-Paper Technology
A. Tsuboi, K. Nakamura, N. Kobayashi
Chiba Univ., Japan

Novel multicolor electrochromic (EC) device based on electrochemicalsilver deposition mechanism was successfully demonstrated. The novel
EC device achieved reversible change of primary colors - magenta,
cyan, yellow, and black (CMYK) - in a single cell by using
electrochemical method which controlled the size of deposited Ag
nanoparticles.

170

Wed./Thu.

December 4/5

EP2 - 3
16:30

Stretchable Electrochromic Devices Using MetalloSupramolecular Polymers
J. Zhang*, T. Sato*, C.-W. Hu*, M. Higuchi*,***NIMS, Japan**JST-CREST, Japan

Metallo-supramolecular polymers show electrochromic properties by
the redox of the metal ions. The polymer ﬁlm was prepared by spin- or
spray-coating on a substrate. Here we report stretchable solid-state
devices with the polymer ﬁlms. The reversible electrochromic changes
in the devices were observed by applying a voltage.
EP2 - 4
16:50

Electrochromic Lens for Smart Glasses
K. Yutani, S. C. Kim, S. Yamamoto, Y. Okada, Y. Naijoh,
S. Hirano, D. Gotoh, M. Inoue, T. Sagisaka, T. Yashiro
Ricoh, Japan

Author Interviews and Demonstrations
17:20 – 18:00

Thursday, December 5
9:00 - 10:10

Meeting Room 204

EP3: Electrophoretic Displays
Chair:
Co-Chair:G. Zhou, Philips Res., the Netherlands
T. Kitamura, Chiba Univ., Japan

EP3 - 1:

Withdrawn

EP3 - 4L:
9:00

Invited Optimum Approach for Product Development
Which is Using Electrophoretic Paper-Like Display
System
K. Hashimoto
Sony, Japan

This paper describes optimum approach for developing products using
epaper, based on long term experience since early 2000ʼs. Our goal is
to make optimum products which people feels to transfer from paper todigital paper lifestyle. The key is to realize paper like visibility, thickness,weight, durability, metaphor, and writing.

171

EP

We have developed a new fabrication technology for electrochromic
devices. Electrochromic layer, stacked between working and counterelectrodes, can be directly fabricated onto a curved plastic substrate byusing new process. Smart Glasses has been successfully
demonstrated. This is the ﬁrst report of smart glasses having
electrochromic devices fabricated without cover substrate.

Thursday
EP3 - 2:
9:25

December 5
Invited Novel Concept for Smart Windows
K.-M. H. Lenssen, M. L. Trouwborst,
M. H. W. M. van Delden
Philips Res., the Netherlands

The holy grail for smart windows is a solution for active, independent
control of incident light and heat. In this paper a novel concept ispresented that can realize this goal based on e-Skin.
EP3 - 3
9:50

Diagnostic of Electrophoretic Particles by Dielectric
Dispersion Spectra
A. Ando, R. Kiyoe, Y. Nishio*, H. Inoue, O. Sakai*
Sakura Color Prods., Japan*Kyoto Univ., Japan

In-situ and non-destructive diagnostic method for electrophoretic
particles in solvent by dielectric dispersion spectra is proposed in thisreport. We measured the spectra for charged particle dispersion anduncharged particle dispersion. The charge of an acryl core/ﬂuoric shellparticle with negative charges was estimated to be 10-17 ~10-16 C.
----- Break ----10:40 - 11:55

Meeting Room 204

EP4: Evaluations
Chair:
Co-Chair:N.-S. Roh, Samsung Display, Korea
Y. Hotta, Ricoh, Japan

EP4 - 1:
10:40

Invited Comparison of e-Paper Displays,
Transflective and Transmissive LCDs under BrightAmbient Light and Image Enhancement Algorithms
for Optimized Grey Level and Color Perception
K. Blankenbach, A. Sycev, S. Kurbatfinski*, M. Zobl**
Pforzheim Univ., Germany*STZ Display Syss., Germany**BMW Group, Germany

Ambient light degrades the image quality of displays. We improved
image enhancement algorithms for bright light perception by a new“∆L/L” approach. Evaluation and tests with subjects were successfully
performed. The combination of raising lower grey levels (also forreﬂective e-paper) and color management was judged best.

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EP4 - 2:
11:05

December 5
Invited The First Half of Process on the Way Toward
International Standard for Electronic Paper Displays
T. Takahashi*,***, K. Hyodo**,****Dai Nippon Printing, Japan**Konica Minolta, Japan***Elect. Paper Consortium, Japan

This paper offers an overview of electronic paper for the international
standards with the history of electronic displays, introduces theelectronic paper consortiumʼs activities in Japan, reports the progresssituation for standardization of the electronic paper displays, and ﬁnallydescribes proposals for the next leap to the electronic paper concepts.
EP4 - 3:
11:30

Invited Why Paper is Superior to Computer Displays
in Cross-Reference Reading for Multiple
Documents?
H. Shibata*, K. Takano*,**, K. Omura**Fuji Xerox, Japan**Univ. of Electro-Commun., Japan

11:55 - 12:20

Meeting Room 204

Short Presentation EPp: Electronic Paper
All authors of poster papers for the EPp session will give a brief,
3-minute oral presentations with no discussion time in advance.
----- Lunch ----14:50 - 17:50

Main Hall C

Poster EPp: Electronic Paper
EPp - 1

Preparation of Functional Paper Sheets Utilizing
Twisting Ball Technology
H. Aoki, M. Yukawa, S. Maeda
Tokai Univ., JapanThe focus of this paper is to explore the functional paper sheets in anticounterfeit ﬁelds using the hybrid technology which consist of rotatingballs in e-papers and hollow tubes in ﬁbers. Model experiments werecarried out using a synthetic or natural hollow ﬁber containing rotatingballs or magnetic particles, respectively.

173

EP

This paper describes two experiments that compare paper andcomputer displays in cross-reference reading for multiple documents.
Results show the superiority of paper regarding the operability ofpointing to text and moving documents. Considering the results, we
provide a new direction of e-paper that aims at supporting crossreference reading.

Thursday
EPp - 2

December 5
Writable Electronic Paper Based on Twisting Ball
Type Electronic Paper
Y. Komazaki, T. Torii
Univ. of Tokyo, Japan

Twisting ball type electronic papers contain tiny Janus particles which
are electrically anisotropic. In this study, we synthesized Janus
particles having both electrically and magnetically anisotropic.
Synthesized Janus particles rotated under the applied electric andmagnetic ﬁeld and electronic papers with these Janus particles realized
writing with magnetic pen freely.
EPp - 3

Increasing Rewriting Speed of Optical Rewritable
e-Paper by Process Optimization
J. SunHong Kong Univ. of S&T, Hong Kong

Effect of interaction between liquid crystal and photoalignment material
on speed of optical rewriting process was investigated. For ORW cellswith same photoalignment material and different liquid, the azimuthal
anchoring energy is mainly dependent on dose of exposure. With thesame dose, the azimuthal anchoring energy is the same.
EPp - 4L

Effect of External Additive on Display
Characteristics in Toner Display
K. K. C. Kumara, S. Nakamura, N. Miyagawa,T. Kitamura
Chiba Univ., Japan

We studied on the effect of external additives and electrical charge ofparticle on the display characteristics in a toner display. Nanosized
additives were used in the experiment. The use of additives is effectivein improving the display contrast and also in lowering the thresholdvoltage.
EPp - 5L

Organic Conducting Polypyrrole-Silica
Nanocomposite Particles as the Display Elements
for Electronic Papers
T. Sugiura, H. Aoki, J. Shindo, R. Tanizaki, S. Maeda
Tokai Univ., Japan

We have prepared organic conducting nanocomposite particles which
utilize polypyrrole as conducting parts and small silica particles as
dispersants. These polypyrrole-silica nanocomposites can be utilize as
inkjet particles and display elements in electrophoretic display due totheir colloid stabilities and electric properties.

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EPp - 6L

December 5
Transparent-Mirror-Black Three-Way Electrochromic
Smart Window Composed of a Pair of ITO-CoatedFlexible Plastic Films
M. Oikawa, R. Onodera, S. Seki, K. Yamada*,
E. Harada*, Y. Sawada*, T. Mizuno**, T. Uchida*
Sendai Nat. College of Tech., Japan*Tokyo Polytechnic Univ., Japan**Univ. of Electro-Commun., Japan

A novel electrochromic smart window with three-way reversible states transparent, mirror, and black - was successfully fabricated using a pairof ﬂexible plastic Tin-doped Indium Oxide ( ITO ) ﬁlms. The devices had
the some mechanical ﬂexibility with a three-way state.
EPp - 7L

The Effect of Angle on Visibility during Reading
E-Books by Age Groups
Y. Ishii, R. Cui, T. Kojima, M. Miyao
Nagoya Univ., Japan

EPp - 8L

The Effects of Environmental Illuminance on
Visibility during Reading E-Books
R. Cui, Y. Ishii, T. Kojima, M. Miyao
Nagoya Univ., Japan

We carried out experiments to evaluate the visibility of reading tablet
devices and e-papers under conditions of staged illuminance. In theexperiments, we measured viewing distance and conducted subjective
evaluations. This study found a dependency between visibility andilluminance of each device.
Author Interviews and Demonstrations
18:30 – 19:10
Supporting Organization:
The Imaging Society of Japan

175

EP

We carried out experiments to evaluate the visibility of reading tablet
devices and e-papers under conditions of staged illuminance. In theexperiments, we measured reading time and conducted subjective
evaluations. This study found a dependency between visibility andilluminance of each device by age groups.

Thursday

December 5

Workshop on MEMS and Emerging
Technologies for Future Displays and Devices
Thursday, December 5
9:00 - 9:05

Meeting Room 206

Opening
Opening Remarks
9:00
M. Nakamoto, Shizuoka Univ., Japan
9:05 - 10:25

Meeting Room 206

MEET1: Fundamental Components and Process Technologies
Chair:
Co-Chair:D. Pribat, Sungkyunkwan Univ., Korea
S. Coe-Sullivan, QD Vision, USA

MEET1 - 1: Invited Graphene for Field Emission Applications
9:05
W. Milne*,***, T. Hallam****, G. S. Duesberg****, C. Li**,
W. Lei**, B. Wang**, M. T. Cole**Univ. of Cambridge, UK**Southeast Univ., China***Kyung Hee Univ., Korea****Trinity College, Ireland

Here we will describe novel approaches to create novel ﬁeld emitting
structures based on graphene which can be fabricated over large
areas. We will also discuss the use of a hybrid gate ﬁeld emission
triode structure based on an electron transparent free-standing
graphene gate structure.
MEET1 - 2: Invited Carbon Nanotube Electron Beams for High
9:25
Efficiency Lighting Bulb
K. C. Park, J. S. Kang, H. R. Lee, S. Y. Park
Kyung Hee Univ., Korea
Stable and long life cold cathode electron emitter is strongly required
for lighting devices. The high performance emitters with carbon
nanotubes were studied for lighting device application. More than 24
kcd/m2 luminance was achieved with 1.95 W driving powers. Detail oflighting performance of light bulbs will be discussed.

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December 5

MEET1 - 3: Invited Development of Smart Digital X-ray Tubes by
9:45
Optimizing Carbon Nanotube Field Emitters andTheir Driving
Y.-H. Song*,**, J.-W. Kim*,**, J.-W. Jeong*, J.-T. Kang*,
S. Choi*, J. Choi*, S. Ahn*,****ETRI, Korea**Univ. of S&T, Korea***Sun Moon Univ., Korea

We developed smart digital X-ray tubes by optimizing carbon nanotube(CNT) emitters and their driving. The CNT emitters were strongly
adhered to the cathode substrate by adding a proper ﬁller material into
the CNT paste. The active current control was adopted to improve theperformance of the digital X-ray tubes.
MEET1 - 4
10:05

Cathodoluminescence from Electron Beam
Crystallized Silicon Thin Films
S. Y. Park, J. S. Kang, H. R. Lee, S. W. Lee, K. C. Park
Kyung Hee Univ., Korea

Cathodoluminescence (CL) were observed from silicon thin ﬁlms
exposed by electron beam (E-beam). The CL of the silicon ﬁlm has aspectra at the range of 300 ~ 800 nm. This spectra is different from asilicon thin ﬁlm which was not exposed by E-beam. This phenomenon
will be presented.

MEET----- Break ----10:40 - 12:00

Meeting Room 206

MEET2: EL Quantum Dots Technologies
Chair:
Co-Chair:J. Jang, Kyung Hee Univ., Korea
T. Yatsui, Univ. of Tokyo, Japan

MEET2 - 1: Invited Electroluminescent Quantum Dots for
10:40
Lighting and Displays
B. S. Mashford, M. Stevenson, C. Hamilton, Z. Zhou,
C. Breen, J. S. Steckel, S. Coe-Sullivan, P. T. Kazlas
QD Vision, USA
Quantum dot light emitting devices (QLEDs) are a solution processable
thin ﬁlm electroluminescent technology that delivers exceptional colorand efﬁciency at low cost of manufacture for display and solid-state
lighting applications. We report on our high efﬁciency device structure.

177

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December 5

MEET2 - 2: Invited Quantum-Dot Light-Emitting Diodes for
11:00
Full-Color Displays
C. Lee, M. Park, J. Lim, J. Kwak*, K. Char, S. Lee,
J. Kim**, C. J. Han**, B. Yoo**, M. S. Oh**, J. Lee**
Seoul Nat. Univ., Korea*Dong-A Univ., Korea**KETI, Korea
Light-emitting diodes based on colloidal quantum dots (QLEDs) haveattracted interests as the next generation display technology due totheir advantages of easy color tunability, high color purity and low-cost
solution-based fabrication. Here, we review recent progress indeveloping efﬁcient red, green, and blue QLEDs for full-color displays.
MEET2 - 3
11:20

Highly Uniform Transfer Mold Quantum Dot Light
Emitting Diodes
R. Matsuhana, M. Nakamoto, J. Moon
Shizuoka Univ., Japan

Highly uniform and reproducible quantum dot light emitting diodes havebeen developed by using Transfer Mold fabrication method to realize
highly efﬁcient and luminescent ﬂat panel displays having the goodcolor purity. The luminance of Transfer Mold QLEDs was as high as 633
times that of ﬂat substrate QLEDs.
MEET2 - 4: Invited Pick-and-Place Transfer of Quantum Dot for
11:40
Full-Color Display
B. L. Choi, T.-H. Kim, K.-S. Cho, E. K. Lee, D.-Y. Chung,J. Y. Ku, J. M. Kim*, S. Hwang
Samsung Advanced Inst. of Tech., Korea*Univ. of Oxford, UK
Full-color colloidal quantum dot (QD) display has recently realized bysolvent-free pick-and-place transfer method. In this talk, the issues of
embodiment of full-color QD display by transfer patterning and thecontrolled multi-stacking of quantum dot layers with different band gaps
using layer-by-layer transfer will be presented.
----- Lunch -----The 20th Anniversary Address
Shunsuke Kobayashi
Tokyo Univ. of Sci. Yamaguchianni

saver ry

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IDW

Wednesday, December 4, 2013
12:00 – 12:30
Conference Hall, 1F

Thursday

December 5

13:30 - 14:30

Meeting Room 206

MEET3: Emerging Quantum Dots Technologies
Chair:
Co-Chair:

K. C. Park, Kyung Hee Univ., Korea
C. Lee, Seoul Nat. Univ., Korea

MEET3 - 1: Invited Quantum-Dot Light Emitting Diodes for
13:30
Improvements of Brightness and Efficiency
J. Jang, A. Castan, H.-M. Kim
Kyung Hee Univ., Korea
This paper reviews quantum-dot light emitting diodes (QLEDs) for highbrightness under various method, including doped materials, inter-layerand device structure. Improvement methods of efﬁciency or brightness
of QLED explaining experimental results are provided. Characteristic
improvement methods, both doped material-related and device
structure-related, are proposed and evidence supporting their feasibility
is provided.
MEET3 - 2: Invited Photoluminescent Quantum Dots in Display
13:50
Products
J. S. Steckel, R. Colby, W. Liu, K. Hutchinson, C. Breen,
J. Ritter, S. Coe-Sullivan
QD Vision, USA

MEET3 - 3: Invited Recent Progress of Nanophotonic Device
14:10
Operated by a Dressed Photon
T. Yatsui
Univ. of Tokyo, Japan
This paper reviews recent progress of nanophotonic device operated
by a dressed photon using semiconductor quantum structure including
quantum dots, quantum well, and quantum rings.
----- Break -----

179

MEET

Quantum dots (QDs) are a luminescent semiconductor nanomaterial
technology that delivers exceptional color for liquid crystal display
backlighting unit (LCD-BLU) applications. We report on the scale-up of
the rapid-injection, batch synthetic method, and compare it to otherproposed manufacturing methods.

Thursday

December 5

15:10 - 16:25

Meeting Room 206

MEET4: Novel Materials and Components
Chair:
Co-Chair:W. Milne, Univ. of Cambridge, UK
Y.-H. Song, ETRI, Korea

MEET4 - 1: Invited Graphene Synthesis on Thin Metal Films
15:10
Y. W. Kim, E. Moyen, D. Pribat
Sungkyunkwan Univ., Korea
We study graphene synthesis on high-temperature annealed copper
thin ﬁlms deposited on sapphire substrates. The high temperatureannealing is performed at reduced pressure under a cap, which
prevents excessive Cu evaporation. The Cu thin ﬁlms display a strong(111) texture after annealing and their surface exhibits steps withatomic height.
MEET4 - 2: Invited Direct Observation of Al2O3 Barrier Film
15:30
Properties Made by Low Temperature Atomic Layer
Deposition onto Fluorescent AlQ3 Molecular Films
T. Maindron, B. Aventurier, T. Jullien, J.-Y. Simon,
E. Viasnoff
CEA-LETI, France
Properties of Al2O3 barrier ﬁlm made by atomic layer deposition at 85 C
has been investigated by depositing the oxide onto ﬂuorescent AlQ3
ﬁlms. Observation of non-ﬂuorescent black spots has been maderevealing that Al2O3 needs to be overprotected from water ingress byan additional moisture-stable layer.
MEET4 - 3: Invited Compact DC Modeling of Organic Field-Effect
15:50
Transistors
Y. Bonnassieux, C. H. Kim, G. Horowitz
École Polytechnique, France
In this invited paper, we review recent progresses and future
perspectives on physics-based compact modeling of organic ﬁeld-effecttransistors (OFETs). It is challenging to develop a universal model thatwould cover a huge variety of materials and device structures available
for state-of-threat OFETs.
MEET4 - 4

180

Withdrawn

Thursday

December 5

MEET4 - 5L High Performance Solid State Thermoelectric Power
16:10
Generation Modules for Self-Powered Electronics
X. Wang, B. Yu, M. Engber, T. Pantha, M. Cleary, J. Yang,
Y. Zhang*, G. Joshi, Y. Ma, I. Chao
GMZ Energy, USA*Boise State Univ., USA
Recently, thermoelectric modules have gained great attentions
worldwide due to their potential in increasing the energy efﬁciency.
GMZ Energy successfully improved the performance of several
thermoelectric materials through nanostructuring approach. Here, weshow the power generation modules developed from those materials
that suit for various applications in electronics industry.
----- Break ----16:50 - 17:50

Meeting Room 206

MEET5: MEMS Imaging and Sensing
Chair:
Co-Chair:Y. Bonnassieux, École Polytechnique, France
T. Maindron, CEA-LETI, France

MEET5 - 1: Invited Hands On Access Fabrication Facility for
16:50
MEMS Development and Production

MEET

K. Totsu, M. Moriyama, Y. Suzuki, T. Ono, S. Yoshida,
M. Esashi
Tohoku Univ., Japan
We offer an open access fab for MEMS developments. Users canutilize the fab and operate the equipment by themselves. Over 120
companies have utilized the fab since 2010. To accelerate Universityʼs
R&D and education, product fabrication by a company user is started
in July 2013.
MEET5 - 2
17:10

Localized Microplasma Generation in MEMS Gas
ChannelR. Sato, D. Yasumatsu, S. Kumagai, M. Hori*, M. Sasaki
Toyota Tech. Inst., Japan*Nagoya Univ., JapanA device for generating the localized high density atmosphericpressure microplasma is realized based on the inductive coupling. The
problem of the difﬁcult ignition is solved by setting Al ﬂoating electrode.
This method is suited for miniaturization and the localized microplasma
generation in the MEMS gas channel.

181

Thursday

December 5

MEET5 - 3
17:30

Commercial Sub-THz Video Camera
G. E. Tsydynzhapov, V. M. Muravev, A. A. Fortunatov,
I. V. Kukushkin
Terasense Dev. Labs., Russia

We present room-temperature sub-THz imaging system capable ofvideo-rate image acquisition. It is sensitive in a wide range frequency
range between 100 GHz and 0.7 THz with peak sensitivity of up to
10V/W. The sensors are fabricated by common semiconductor fabs andthe camera is commercially available.
Author Interviews and Demonstrations
18:30 – 19:10–The 20th Anniversary– Keynote & Special Session“What’s the Next Display?”
by LCT Workshop
A future manufacturing technologies
and newly developed LCD panels will bepresented.
Wednesday, December 4, 2013
14:00 – 16:30 (LCT1 & LCT2)
th20
Mid-sized Hall A, 1F
IDW
See page 47-48 for details

anni

sa
ver ryThe 20th Anniversary Session“Past, Present and Futureof Display Technology”
by FMC Workshopannisa
ver ry

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IDW

Wednesday, December 4, 2013
14:00 – 17:00 (FMC1 & FMC2)
Main Hall A, 1F
See page 87-89 for details

Wednesday

December 4Workshop on
Display Electronic Systems
Wednesday, December 4
14:00 - 14:05

Main Hall B

Opening
Opening Remarks
14:00
H. Okumura, Toshiba, Japan
14:05 - 15:15

Main Hall B

DES1: Vehicle Applications
Chair:
Co-Chair:K. Morita, NTSEL, Japan
H. Okumura, Toshiba, Japan

DES1 - 1:
14:05

Invited Recovery of Sustained Attention by Brief
Stimulus Exposure in the Peripheral Visual Field
K. Uchikawa, D. Endou, K. Fukuda
Tokyo Inst. of Tech., Japan

Our visual ability of detecting objects tends to decline over time whiledriving when we continuously pay attention on a road. This study
showed that the visual performance could be recovered by presenting
brief lights in the peripheral visual ﬁeld, suggesting an effective warning
display for vehicle drivers.

DES

DES1 - 2:
14:30

Invited Obstacle Detection System Using Stereo
Vision for Driver Assistance
K. Saneyoshi
Tokyo Inst. of Tech., Japan

Stereo vision is suitable for obstacle detection to avoid collisionbecause of its wide ﬁeld of vision, simultaneous detection of multiple
objects. We have developed several stereo vision systems including theﬁrst demonstration system in 1991, the commercialized system in 1999
and newly developed system with 160 fps.
DES1 - 3
14:55

Development of Full-Color HD Resolution
Automobile HUD User Interface
Z. Chen, Y. Tang, B. Wang
Southeast Univ., China

A set of full color HD resolution automobile HUD UI design ispresented, which provide variety of driver assistance functions withfriendly UI elements. It has been implemented in Android embedded
system. An HUD evaluation system has been built for demonstration
and user test.
----- Break ----183

Wednesday

December 4

15:40 - 17:20

Mid-sized Hall B

INP2/DES2: AR/VR Interactive Systems
Special Topics of Interest on Augmented Reality and Virtual Reality
Chair:
Co-Chair:N. Sakata, Osaka Univ., Japan
N. Hashimoto, Citizen Holdings, Japan

INP2/
DES2 - 1:
15:40

Invited Reality Beyond Its Physicality
M. Inami
Keio Univ., Japan

What are the challenges in creating interfaces that allow a user tointuitively express his/her intentions? Todayʼs HCI systems are limited,and exploit only visual and auditory sensations of technologies. We will
introduce several approaches that use multi/cross modal interfaces
with “implicit interaction” for enhancing human I/O.
INP2/
DES2 - 2:
16:10

Invited A Tablet Interface for Laying Out AR Objects-Outlook of Relationship with Smartphone and ARN. Sakata, R. Nagashima, S. Nishida
Osaka Univ., JapanWe describe a new method for accurate manipulation of AR objects at
a distance. We address this problem and show how combining AR
technology with touch pad operations such as tapping, dragging, andpinching can provide an easy way to position remote AR objects withhigh accuracy.
INP2/
DES2 - 3:
16:35

Invited The Possibility of the Eyeglass-Type Mobile
Phone
T. Horikoshi
NTT DoCoMo, Japan

The possibility of eyeglass-type devices for mobile use is discussed.
We introduce a prototype of a hands-free videophone that can capture
the wearerʼs own face by using seven head-mounted ﬁsh-eye cameras,
and allows video calls to be made without holding the phone.
INP2/
DES2 - 4
17:00

A Cartoon-Character Costume with Active Facial
Expression
Y. Oka, M. Yamamoto
Niigata Univ., Japan

We propose a cartoon-character costume. The costume equips a web
camera and display panel. The system of the costume is able tochange facial expressions and looks freely. The actor wearing thecostume is able to play more than one role in the costume of one body.
Author Interviews and Demonstrations
17:20 – 18:00

184Thursday

December 5
Thursday, December 5

10:40 - 12:10

Mid-sized Hall B

DES3: Human Perceptions in Augmented Reality
Special Topics of Interest on Augmented Reality and Virtual Reality
Chair:
Co-Chair:T. Kuroda, Kyoto Univ. Hospital, JapanK. Makita, AIST, Japan

DES3 - 1:
10:40

Invited How AR Reforms Social Medical System?
T. Kuroda, Y. Kuroda*, K. Hori**, N. Ohboshi***
Kyoto Univ. Hospital, Japan*Osaka Univ., Japan**Gunma Pref. College of Health Sci., Japan***Kinki Univ., JapanNo clinical procedure is performed without computational support inmodern hospitals. The Augmented Reality (AR) is expected as thesilver bullet for the problems happens among computerized clinics. This
lecture surveys on-going medical AR trials and forecasts how ARchanges our social medical system in the near future.
DES3 - 2:
11:05

Invited Augmenting Human Experience with
Perception-Based Displays Utilizing Illusions
T. Narumi
Univ. of Tokyo, Japan

DES3 - 3:
11:30

Invited Blue Light Matters: The Eye Is a Camera anda Clock!
K. Tsubota
Keio Univ., Japan

Energy-efﬁcient blue LED lights and visual display terminals proliferate
nowadays. Two concerns of blue light are potential retinal damage
leading to age-related macular degeneration and circadian rhythm
disruption from exposure at night. Appropriate intervention for eye
protection is necessary for the long-term healthy incorporation of blue
light into modern society.

185

DES

In cross-modal interactions, our perception through one sense ischanged by stimuli simultaneously received through other senses. Byutilizing this, we can provide people to multi-modal experience withlimited sensory feedbacks. In this paper, I introduce examples ofperception-based displays augment our experience by using crossmodal interactions and augmented reality.

Thursday
DES3 - 4L
11:55

December 5
Effectiveness of Freehand Modeling by BlueGrotto
for CSCW in VR Space
T. Oyoshi, Y. Miwa, N. Shichijo, S. Saga
Muroran Inst. of Tech., Japan

This paper discusses the effectiveness of the implementation of thefreehand modeling interface of BlueGrotto in CSCW systems using
immersive VR environments. A demonstration shows that the interface
naturally reinforces the mutual communications among the users
without making them take the trouble to use additional communications
tools.
12:10 - 12:25

Mid-sized Hall B

Short Presentation DESp: Display Electronics and Systems
All authors of poster papers for the DESp session will give a brief,
3-minute oral presentations with no discussion time in advance.
----- Lunch ----13:30 - 14:45

Mid-sized Hall B

DES4/VHF1: Sensing Technologies for Virtual/Augmented Reality
Special Topics of Interest on Augmented Reality and Virtual Reality
Chair:
Co-Chair:M. Kanbara, Nara Inst. of S&T, Japan
J. Bergquist, Nokia, Japan

DES4/
VHF1 - 1:
13:30

Invited Position and Direction Estimation System ofUser’s Viewpoint for Wide Indoor Environment
M. Kanbara
Nara Inst. of S&T, Japan

This paper introduces real-time viewpoint estimation system withinvisible markers for wide indoor area. The system can estimate theposition and direction of user's viewpoint precisely by afﬁxing
wallpapers containing printed invisible markers on ceilings. This system
can be applied to augmented reality, view depended display or humanrobot interaction.

IDW ’13 Tutorial in Japanese
Organized by SID Japan Chapter
Tuesday, December 3, 2013
Mid-sized Hall B, 1F
Sapporo Convention Center
Detailed information is available on
http://www.sidchapters.org/japan/
186

Thursday
DES4/
VHF1 - 2
13:55

December 5Useful Field of View in Augmented Reality:
Comparison Between Distribution of Attention
under Binocular and Monocular Observation
A. Kitamura, H. Naito, T. Kimura*, K. Shinohara,
T. Sasaki**, H. Okumura**
Osaka Univ., Japan*Kansai Univ. of Welfare Scis., Japan**Toshiba, Japan

We conducted two experiments to compare binocular and monocularobservations when an Augmented Reality image was presented during
a useful ﬁeld of view (UFOV) task. We found the detection of aluminance change in the peripheral ﬁeld of view was more difﬁcult
under binocular AR observation than under monocular observation.
DES4/
VHF1 - 3:
14:15

Invited e-Heritage, Cyber Archaeology, and Cloud
MuseumT. Oishi, K. Ikeuchi
Univ. of Tokyo, Japan

This paper summarizes our research project, e-Heritage, to digitize
cultural heritage assets over the world. We also propose cyberarchaeology that provides new ﬁndings based on the digital analysis on
those data. e-Heritage data is uploaded to cloud as well asarcheological ﬁndings for a comprehensive visualization system.
----- Break ----14:50 - 17:50

Main Hall C

DESp - 1

Dynamic Dimming Algorithm for Low Power andHigh Image Quality Using Edge-Type LED Backlight
L. Yang, C. Li*, Y. Chen*, H. Li*, J. He*, L. Chu*, Z. Tu,
X. Zhang
Xi’an Jiaotong Univ., China*Shenzhen China Star Optoelect. Tech., China

The proposed dynamic dimming algorithm including four steps isapplied to edge-type LED backlight. The experiment shows the power
can be decreased to 64.46% of the non-dimming origin, the clipping
ratio is 0.61%, the mean PSNR of typical pictures is 62.36 dB, and themax contrast ratio can reach to 24000:1.

187

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Poster DESp: Display Electronics and Systems

Thursday
DESp - 2

December 5
LED Module Integrated with Microcontroller,
Sensors, and Wireless Communication
K. Sato, A. Tsuji, S. Suyama, H. Yamamoto*
Univ. of Tokushima, Japan*CREST, Japan

We have developed a “smart” LED tile module integrated with amicrocontroller, a wireless communication chip, and various sensors,
including an acceleration sensor, a magnetic sensor, a light sensor anda MEMS microphone. The LED tiles share sensor information andshow the current status in real-time on the LED screen.
DESp - 3

Image Upscaling Ringing Suppression Using
Adaptive Edge Detection Method
K.-S. Peng, F.-C. Lin*, H.-P. D. Shieh*, Y.-P. Huang*Nat. Tsing Hua Univ., Taiwan*Nat. Chiao Tung Univ., Taiwan

This paper proposed a practical method to suppress image upscaling
ringing artifacts in transferring FHD to 4K2K resolution of LCD TCON
circuit. The method utilized the geometric features of ringing artifacts toadaptively reduce these effects efﬁciently. The ﬁnal results based on
the 1-D ﬁlter interpolation to achieve real-time implementation.
DESp - 4

Eyeglass-Based Hands-Free Videophone Using
Fish-Eye Cameras and HMD
S. Kimura, T. Horikoshi
NTT DoCoMo, Japan

We propose an eyeglass-based videophone. The developed glasses
have ﬁsh-eye cameras to capture the wearerʼs face and background,and the images are fused to generate a self-portrait image. The system
also has a HMD displaying the intended party and enables a video callwithout holding camera and display devices.
DESp - 5L

Weighted Roll-Off Scheme for Low Power Local
Dimming Liquid Crystal Displays
S.-K. Kim, E. Song, H. Nam
Kyung Hee Univ., Korea

This paper demonstrates a weighted roll-off local dimming scheme forlow power LCD applications which eliminates block artifacts at a real
backlight with light spreads. Both simulation and experimental results
represent that a proposed weighted algorithm alleviates color
difference values and block artifacts without any increases in power
consumption.
Author Interviews and Demonstrations
18:30 – 19:10

188

Friday

December 6
Friday, December 6

9:00 - 10:20

Small Hall

DES5: Display Driving (1)Chair:
Co-Chair:T. N. Ruckmongathan, Raman Res. Inst., India
T. Yamamoto, NHK, Japan

DES5 - 1:
9:00

Invited Micro Pulse Width Modulation for Grayscales
in Display Devices
T. N. Ruckmongathan
Raman Res. Inst., India

Introduction of group weights by factoring bit weights of grayscale leads
to micro pulse width modulation (MPWM), a method to achieve drastic
reduction in number of time intervals to display grayscales ascompared to pulse width modulation and low power in fast responding
displays.
DES5 - 2
9:25

A New Smart Charge Sharing Method for Liquid
Crystal Displays with Lower Power Consumption in
Z-Inversion
S.-R. Kim, J.-M. Kim, M. Kim, J. W. Kim*, S.-W. Lee
Kyung Hee Univ., Korea*Homestead High School, USA

This paper proposes a novel charge sharing method to reduce thepower consumption in Z-inversion. Simulation results show that NCS
method can save more power compared to the conventional one.
New Pixel Circuit Based on a-IGZO TFTs for BluePhase LCDs

DES

DES5 - 3
9:45

P.-C. Lai, M.-H. Cheng, C.-D. Tu*, C.-L. Lin
Nat. Cheng Kung Univ., Taiwan*AU Optronics, Taiwan
This work presents a new pixel circuit using a-IGZO TFTs for driving
polymer-stabilized blue-phase liquid crystal displays (BPLCDs). This
circuit can increase the driving voltage range to -20 V ~ 20 V andenhance the charging capability with 0 V ~ 15 V supplied voltage rangeof data driver IC.
DES5 - 4L
10:05

Micro Pulse Width Modulation to Drive Matrix LCDs
T. N. Ruckmongathan
Raman Res. Inst., India

About 45% reduction in supply voltage of drivers as compared to thatof successive approximation method and about 90% reduction in
number of time intervals as compared to pulse width modulation areachieved by using micro pulse width modulation to drive PM LCD.
----- Break ----189

Friday

December 6

10:40 - 12:00

Small Hall

DES6: Display Driving (2)Chair:
Co-Chair:O.-K. Kwon, Hanyang Univ., Korea
S. Ono, Panasonic, Japan

DES6 - 1:
10:40

Invited AMOLED Pixel Structure Using the Negative
Feedback Method for High Resolution Displays
O.-K. Kwon, S.-K. Hong, N.-H. Keum
Hanyang Univ., Korea

The negative feedback method (NFM) for high resolution active matrixorganic light emitting diode displays has been researched. NFM
compensates the gate voltage distortion of the driving TFT. In thispaper, previously reported pixel structures using NFM are discussed indetails.
DES6 - 2
11:10

A Low-Power Scan Driver Using a-IGZO TFTs for
10-in. WQXGA AMFPDs
J.-Y. Kim, S.-J. Ahn, C.-H. Lee, S.-K. Hong, O.-K. Kwon
Hanyang Univ., Korea

A low-power scan driver using amorphous indium-gallium-zinc-oxide(a-IGZO) TFTs is proposed for 10-inch WQXGA. The proposed scandriver reduces short-circuit current for low-power consumption. The
power consumption of the proposed scan driver is reduced by 36.7%
compared to the previously reported scan driver with the lowest power
consumption.
DES6 - 3:
11:30

Invited Digital Drive as an Enabling Technology for
AMOLED Displays
C. Xu, P. Volkert
Saarland Univ., Germany

Digital drive operates the driver transistor of an AMOLED pixel asswitch, so that the Vth variation is no more an issue. In addition, thepower consumption is nearly halved. Reasonable visual quality may beachieved by speciﬁc image decomposition compensating nonuniformity and self-heating as well as avoiding contours.
----- Lunch -----

190

Friday

December 6

13:30 - 14:50

Small Hall

DES7: Low Power Systems
Chair:
Co-Chair:

H. Okumura, Toshiba, Japan
A. Nagase, Mitsubishi Elec., Japan

DES7 - 1:
13:30

Invited A Novel Color Reflective LCD Using Memoryin-Pixel Technologies with Newly-Designed System
and Pixel Structure
M. Tamaki, Y. Fukunaga, M. Mitsui, K. Maeda, M. Kabe,Y. Teranishi, T. Nakanishi, H. Omori, S. Hayashi,
N. Takasaki, F. Goto, T. Harada, S. Kimura
Japan Display, Japan

A memory-in-pixel system optimized to reduce power consumption will
be described. The advantages of newly-designed pixels which improveimage quality and provide the capability to read in a dark environment
by a novel approach will be presented. A 7.03-inch XGA prototype
reﬂective LCD using MIP technologies will also be demonstrated.
DES7 - 2:
13:50

Invited Image Compression IF Technologies for Low
Power FPDs
H. Okumura
Toshiba, Japan

We discussed the importance of not only display point of view but also
total image systematic point of view approach to reduce power
consumption for FPDs. We have developed low power interface
techniques using image compression methods, and the prototype
FPGA reduced the power consumption of 14-in. SXGA LCD circuit byaround 14-15 %.

DES

DES7 - 3:
14:10

Invited Low Power Image Sensor Technologies
J. Deguchi
Toshiba, Japan

The power consumption of CMOS image sensors (CISs) is lower thanthat of CCDs. A signal readout circuit in CISs consumes the largest
power. A 1.4 MPixel CIS with a low-power signal readout circuit ispresented. The ﬁgure-of-merit is twice better than that of the state-ofthe-art article.
DES7 - 4
14:30

Efficient Local Dimming Algorithm for LCDs with
Single-Edge LED Backlight
D. Schäfer, T. Jung, M. Krause, C. Xu
Saarland Univ., Germany

We present an algorithm for local dimming of panels with just (few)
LEDs on the short edge and therefore with a rather global backlight
distribution. Our approach uses a global optimization which allows highpower saving rates and a higher image quality without LED light
coupling artifacts.
----- Break ----191

Friday

December 6

15:10 - 16:15

Small Hall

DES8: Display Electronic Systems
Chair:
Co-Chair:A. Sakaigawa, Japan Display, Japan
R. Hattori, Kyushu Univ., Japan

DES8 - 1:
15:10

Invited Electronic Paper System Using High
Resolution Electrophoretic Display
S. Nebashi, Y. Kodama, I. Hayaishi, K. Kajino, Y. Kuchiki
Seiko Epson, JapanA new e-paper system which is suitable for applications of document
works has been developed. By using high resolution EPD and thebinary driving technology, the system has the same readability of
paper, capability of handwriting, and convenience as IT equipment.
DES8 - 2
15:35

A 3-Gbps Integrated-Stream Protocol Plus for Ultra
High-Definition TFT-LCD Applications
H.-C. Wang, W.-C. Huang, H.-D. Lin, C.-H. Yang
AU Optronics, Taiwan

This paper proposes a chip on ﬁlm (COF) architecture of integratedstream protocol plus (iSP+) in ultra high-deﬁnition application. The
phase locked loop (PLL) type clock data recovery (CDR), an 8b/9b
encoding technique are employed to the system. The simulation results
show that data rate is work up to 3 Gbps.
DES8 - 3
15:55

Efficient Edge Directed Unsharp Masking Super
Resolution
K.-S. Peng, F.-C. Lin*, H.-P. D. Shieh*, Y.-P. Huang*Nat. Tsing Hua Univ., Taiwan*Nat. Chiao Tung Univ., Taiwan

This paper proposed an efﬁcient and practical super resolution process- Edge Directed Unsharp Masking approach, which focused ontransferring FHD to 4K2K resolution. The algorithm provided an
artifacts free directional edge enhancement method with detail stretch
to increase the visual resolution in a computational efﬁciency design forreal-time implementation.
Author Interviews and Demonstrations
16:40 – 17:20
Supporting Organizations:Technical Group on Information Display, ITE
Information Sensing Research Committee, ITE
Special Interest Group on Mixed Reality, The Virtual Reality Societyof Japan
Technical Committee on Electronic Information Displays, Electronics
Society, IEICE
Technical Committee on Image Engineering, Information and Systems
Society, IEICE

192

Thursday

December 5

Workshop on Flexible Displays
Thursday, December 5
9:00 - 12:00

Main Hall C

Poster FLXp: Flexible Display Technologies
FLXp - 1

Screen-Printing Fabrication of Interconnections for
TFT
Y. Maeda*, K. Fukada*, A. Matoba**, S. Takagi***,S. Inoue*, T. Shimoda*,*****JAIST, Japan**Ind. Res. Inst. of Ishikawa, Japan***Tokyo Process Service, Japan****JST-ERATO, JapanTo fabricate microscopic ﬁne lines by screen printing, we ﬁrst simulated
the behavior of a paste during printing. Optimized printing conditions
based on the results were then used to Ag lines 30 µm-width separated
by 30 µm on a glass substrate were successfully screen-printed.
FLXp - 2

Preparation of Ruthenium Metal and Ruthenium
Oxide Thin Films by a Low-Temperature Solution
ProcessY. Murakami*,**, P. T. Tue**, H. Tsukada**,***, J. Li**,****,
T. Shimoda**,*****JSR, Japan**JAIST, Japan***Mitsubishi Materials Elect. Chems., Japan****JST-ERATO, Japan

FLXp - 3

Withdrawn

FLXp - 4

Development of Ch-LC Microencapsulated Flexible
Displays with Reduced Driving Voltage and Much
Simplified Manufacturing Process
S.-G. Kang*,**, H. T. Jang*, Y.-J. Lee*, J.-H. Kim*
*Hanyang Univ., Korea**Image Lab, Korea

We developed a novel Ch-LC microencapsulated ﬂexible display withthe characteristics of the reduced driving voltage and much simpliﬁed
manufacturing process. And the fabrication processes was greatly
simpliﬁed by taking advantage of both coating method using a bar
coater and direct printing of opposite electrode using a screen print.
193

FLX

Highly conductive ruthenium metal thin ﬁlms and ruthenium oxide ones
were prepared by a solution process at low temperature (e.g., 6.9
10-5 Ωcm at 300 C for Ru0). Their structure and electric properties
depend on the annealing conditions. The process allowed us tofabricate ruthenium electrodes on ﬂexible substrates.

Thursday

December 5

FLXp - 5

Withdrawn

FLXp - 6

Hybrid Inorganic-Organic Multilayer Structures for
Flexible Moisture-Barrier Films of Flexible OLEDLightings
S.-W. Seo, E. Jung, H. Lee, S. M. Cho
Sungkyunkwan Univ., Korea

ALD/PECVD are applied as the hybrid multilayer, which has property
for the moisture barrier for the thin ﬁlm encapsulation of ﬂexible OLEDs.
Plastic substrate was used for the substrate, HMDSO as the organic
layer, Al2O3 as inorganic layer. The moisture barrier property wasestimated by measuring WVTR by Ca test.
FLXp - 7

Metal Grid Embedded Transparent Electrode for
Flexible OLEDs
H. Lee, S.-W. Seo, E. Jung, S. M. Cho
Sungkyunkwan Univ., Korea

We fabricated the ﬂexible OLED using metal grid as an anode. The
metal grid was fabricated by etching or imprinting. The Al was
deposited and patterned by photo-lithography and etched by etchant.
Ag grid was manufactured by imprinting. The electrode showed sheet
resistance and transmittance of 8.5Ω/□ and 74%.
FLXp - 8

Colorful Thermoformable LCD and Its Sequential
Segment Driving
W.-T. Chen, M.-H. Yang, C.-C. Tsai, R.-L. Chang,
C.-L. Chin, Y.-Z. Lee, J.-L. Chen
ITRI, Taiwan

A color thermoformable liquid crystal display is demonstrated in thispaper. A curved opera face pattern designed segments on thethermoforming LCD can be addressed to show six facial expressions.
This high aspect ratio conformal display has potential applications for
smart electronic skin and shell of products.
FLXp - 9L

A 5-in. Flexible AMOLED on PEN Substrate Driven
by Ln-IZO TFTs Based on Anodic Aluminum Oxide
H. Xu*, M. Xu*, J. Pang**, J. Zou*, H. Tao*, M. Li*, D. Luo*,
L. Wang*, J. Peng*,***South China Univ. of Tech., China**Guangzhou New Vision Opto-Elect. Tech., China

A ﬂexible AMOLED on PEN (Polyethylene-Napthalate) substrate, withan anodic amorphous Al2O3 as gate insulator, is presented. Throughthe anodic oxidation, the high quality gate insulator was deposited atroom temperature, which ensured good characteristics in the TFTs. The
maximum processing temperature during the fabrication was controlled
below 180oC.

194

Thursday
FLXp - 10L

December 5
The Effect of Isopropyl Alcohol and Silicon Dioxide
Nanoparticle on the Reflection Loss for Single
Crystalline Silicon
C. Wei, C.-M. Hu
Tatung Univ., Taiwan

The effect of amount of SiO2 nanoparticles with PR as soft mask on
surface texturization is investigated. The surface texture is improved
with nanoparticles enhances etching nucleation. The surface texture isaffected by etching condition and amount of nanoparticles. Higher
amount of nanoparticles is better for reﬂection reduction loss.
FLXp - 11L

Damage-Induced Black Spot Expansion of Thin-Film
Encapsulated OLED Devices
S. Zhu, H. Hirayama, X. Huang
Kunshan New Flat Panel Display Tech. Ctr., China

In this paper, an attempt is made to improve the robustness of thin-ﬁlm
encapsulation against black spot expansion by optimizing thedeposition conditions in the light of understanding the process-related
phenomena. A damage-induced black spot expansion model is
proposed for a thin-ﬁlm encapsulation that is less sensitive to particles.
----- Lunch ----13:30 - 14:30

Main Hall A

FMC5/FLX1: Flexible Materials
Chair:
Co-Chair:Y. Mizushima, Corning, Japan
M. Kimura, Nagaoka Univ. of Tech., Japan

FMC5/
FLX1 - 1:
13:30

Invited Highly Transparent and Conductive Carbon
Nanotube Film on Plastic: Cellulose-Assisted Film
Deposition Followed by Solution and Photonic
Processing

FLX

Y. Kim, Y. Yokota, S. Shimada, R. Azumi, T. Saito,
N. Minami
AIST, Japan
Carbon nanotube transparent conductive ﬁlm can be manufactured
through a resource- and energy-saving solution process able toproduce a ﬁlm at room temperature without vacuum or hightemperature processes. The developed carbon nanotube thin ﬁlm
achieves sheet resistance of 68-240 Ω/sq at transmittance of 89-98%.

195Thursday
FMC5/
FLX1 - 2:
13:50

December 5
Invited Challenges toward Reliable Evaluation ofHigh Water Barrier Property
S. Hara*,**, A. Suzuki**, H. Takahagi***AIST, Japan**CEREBA, Japan

Reference ﬁlms with 10­2 - 10­4 g/m2/day in water vapor transmission
rate (WVTR) were developed. Using them, consistency between two
WVTR measurement systems was successfully achieved to 10­4 g/m2/
day level. Furthermore, CEREBAʼs strategy to achieve a reliable WVTR
evaluation technology to 10­6 g/m2/day is presented.
FMC5/
FLX1 - 3:
14:10

Invited Novel Materials for Printable Electronics
Y. Ikeda*, T. Imamura*, Y. Tomizawa*, T. Shiro*,***Teijin, Japan**NanoGram, USA

Si nanoparticles are novel materials for printed electronics. In thisstudy, we demonstrate the carrier injection process and semiconductor
layer prepared via laser irradiation of Si nanoparticle ﬁlm for use insilicon-based FETs. Moreover, SiO2 dielectric layer andphotoluminescence treated Si nanoparticles with application in FPDs
and LEDs are introduced.
----- Break ----15:10 - 15:15

Main Hall A

Opening
Opening Remarks
15:10
M. Ito, Toppan Printing, Japan
15:15 - 16:20

Main Hall A

FLX2: Advanced Processes for Flexible Displays
Chair:
Co-Chair:T. Kamata, AIST, Japan
Y. Mishima, FUJIFILM, Japan

FLX2 - 1:
15:15

Invited The Potential of Carrier Laminated Ultra-Thin
Glass Technology Corresponding to Sheet-to-Sheet
Process for Thinner and Flexible Displays
Y. Matsuyama, K. Ebata, D. Uchida, T. Higuchi,
S. Kondo*
Asahi Glass, Japan*AGC America, USA

We propose a carrier laminated ultra-thin glass technology. Thislaminated substrate has good thermal and chemical durability for LCDs
or OLEDs processes, and can be easily separated carriers after
assembling display-cell. Using this technology, thin and ﬂexible display
can be manufactured without chemical thinning.
196

Thursday
FLX2 - 2
15:40

December 5
Investigation of Roll to Sheet Imprinting for a
Process to Fabricate TFTs
H. Koyama*,**, K. Fukada**, Y. Murakami**,***, S. Inoue**,
T. Shimoda**,*****Toppan Printing, Japan**JAIST, Japan***JSR, Japan****JST-ERATO, Japan

We applied a roll-to-sheet imprinting process to a large-scale substrate.
Patterned RuO2 electrodes were fabricated on both glass and ﬂexible
substrates (200 150 0.7 mm3). The resistivity of the electrodes on a
glass substrate was 3.5 10-5 Ω cm, making this technique useful forelectrodes of TFTs.
FLX2 - 3
16:00

Development of a Wet-On-Wet Process for a FullyPrinted TFT Fabrication
Y. Kusaka, K. Sugihara*, M. Koutake**, H. Ushijima
AIST, Japan*Tokyo Electron, Japan**DIC, Japan

We achieved a reduction in the misregistration of overlying patterns
printed on a ﬂexible plastic ﬁlm, and a drastically shorter processing
time with fully printed TFT fabrication. This was achieved using a newly
developed wet-on-wet printing process wherein a subsequent layer canbe printed on a previous semi-dried (not-sintered) layer.
----- Break ----16:50 - 18:05

Main Hall A

FLX3: Carbon Related Materials
H. Fujikake, Tohoku Univ., JapanT. Furukawa, Yamagata Univ., Japan

FLX3 - 1:
16:50

Invited Fabrication of Carbon Nanotube TFT for
Sheet Electronic Device by Printing Method

FLX

Chair:
Co-Chair:H. Endoh*, S. Yorozu*, F. Nihey*,**, H. Numata*,**,
T. Sekitani***, T. Someya****NEC, Japan**TASC, Japan***Univ. of Tokyo, JapanFor pressure-sensing sheet, carbon nanotube thin-ﬁlm transistor arrays
were fabricated on a plastic ﬁlm. The pressure-sensing cell was
prepared to combine printed-TFT, a conductive rubber sheet and a ﬁlm
with a copper foil. Drain current changes in response to pressure
applied to the current changes were observed.

197

Thu./Fri.
FLX3 - 2:
17:15

December 5/6
Invited Carbon Nanotube Transparent Conductive
Films for Flexible Display Applications
D. J. Arthur, R. P. Silvy, Y. Tan, P. Wallis
SouthWest NanoTechs., USA

This paper reports on the effect of several key variables on
optoelectronic performance of Carbon Nanotube transparent
conductive ﬁlms. Variables include Carbon Nanotube composition, Ink
formulation, Coating / Printing method, Flexible substrate type and useof Topcoat. Additionally, the synergy between Graphene and CNT werestudied.
FLX3 - 3:
17:40

Invited Double-Walled Carbon Nanotube Transparent
Conductive Film for Next Generation Flexible Device
T. Oi, H. Nishino, K. Sato, O. Watanabe, S. Honda,
M. Suzuki
Toray Inds., Japan

We have developed double-walled carbon nanotube (DWCNT)transparent conductive ﬁlm (TCF). Our CNT TCF has very hightransparent conductivity, which are currently among the top in theworld. And it has great characteristics such as high ﬂexibility (bending
and stretching durability) and high environmental stability.
Author Interviews and Demonstrations
18:30 – 19:10

Friday, December 6
9:00 - 10:30

Conference Hall

FLX4: Substrates and Materials for Flexible Displays
Chair:
Co-Chair:T. Shiro, Teijin, JapanT. Eguchi, Sumitomo Bakelite, Japan

FLX4 - 1:
9:00

Invited Low Coefficient of Linear Thermal Expansion
Polyimide Film for TFT Device Substrate
T. Okuyama, I. Kobayashi, N. Watanabe, T. Tsuchiya,
M. Nakamura
Toyobo, Japan

We had developed low coefﬁcient of linear thermal expansion
polyimide ﬁlm "XENOMAX". In order to make TFT device on this ﬁlm,
we developed an attachment technology to glass. This technology canuse 400℃ process. By removing polyimide ﬁlm from glass, the device
formation on a ﬁlmboard becomes easy.

198

Friday
FLX4 - 2:
9:25

December 6
Invited Development of High Barrier Film for OLED
Devices
K. Hirabayashi, H. Ito, T. Mori
Konica Minolta, JapanWe are developing a high barrier ﬁlm for ﬂexible OLED devices. It has
achieved a water vapor transmission rate (WVTR) of 10-6 g/m2/day
which meets the standard that barrier ﬁlms for OLED should satisfy,
and has been found to form very few dark spots in OLED device
evaluation.
FLX4 - 3
9:50

Gas Barrier Film Formation with Silazane Coating
Material
N. Satake, S. Kawato, Y. Ozaki, M. Kobayashi
AZ Elect. Materials Manufacturing Japan, Japan

Silazane coating material is very unique Si polymer comprising of SiN
bond. We studied Silazane coating material as gas barrier ﬁlm and had
good property without high temperature cure. Here we demonstrate
successful usage of Silazane material as barrier coating on plastic ﬁlm.
FLX4 - 4
10:10

Application of Laser Fusing Cutting for Ultra-Thin
Glass
N. Inayama, T. Fujii
Nippon Elec. Glass, JapanWe are developing the laser fusing cutting method by using a CO2
laser as a cutting method for ultra-thin glass. The fused glass edge isformed into a smooth ﬁre-polished surface without chamfering. Here,we will report our current situation, problems and future development oflaser fusing cutting.
----- Break ----10:40 - 11:55

Conference Hall

H. Maeda, DNP, JapanK. Akamatsu, Sony, Japan

FLX5 - 1:
10:40

Invited Flexible Pressure Sensor Array Fabricatedby Printing Method

FLX

FLX5: Advanced Devices and Materials
Chair:
Co-Chair:S. Uemura, Y. Watanabe, S. Hoshino, H. Sakai,
K. Tokoro, H. Tokuhisa, T. Kodzasa, M. Yoshida
AIST, JapanA polyamino acid ﬁlm formed by this piezoelectric ink exhibited highpiezoelectricity after only drying treatment and without any polarization
treatment. Therefore, direct pattern printing of the piezoelectric polymer
on a plastic substrate was realized. Moreover, a printed ﬂexible
pressure sensor array was fabricated using the polyamino acid ink.

199

Friday
FLX5 - 2:
11:05

December 6
Invited Flexible Piezoelectric Films with Alternate
Rows of Optical Isomers of Poly-Lactic Acid Film
T. Yoshida, A. Kato, T. Yoshimura, Y. Tajitsu*
Teijin, Japan*Kansai Univ., JapanWe developed a poly-lactic acid multilayer ﬁlm as the ﬁrst step towardrealizing a polymer actuator with a large size and ﬂexibility. The
fabricated multilayer ﬁlm has a piezoelectric performance equivalent tothat of PZT ceramics, and its piezoelectric resonance can also be
observed.
FLX5 - 3:
11:30

Invited Development of Materials and Innovative
Deposition Processes for Organic TFTs
J. Brill*,**, T. Musiol*,**, D. Kaelblein*,**, T. Gessner*,**,
T. Staudt*,***BASF SE, Germany**InnovationLab, Germany

The future of displays is heading towards rugged, conformable, ﬁnally
ﬂexible displays. Air-stable, n-type organic semiconductors based on
naphthalene diimides will presented, that have shown mobilities ofabove 1cm²/Vs when deposited by vacuum evaporation. A new
deposition process has been found which combines advantages of
vacuum deposition and solution processing.
----- Lunch ----13:30 - 14:15

Conference Hall

FLX6: Flexible Oxide TFT
Special Topics of Interest on Oxide TFT
Chair:
Co-Chair:M. Ito, Toppan Printing, JapanK. Uemura, Nippon Steel Sumitomo Metal, Japan

FLX6 - 1L
13:30

High Performance Top-Gate Oxide TFT on Plastic
Substrate for Flexible OLED Displays
H. S. Shin, S. M. Lee, S. Oh, J.-U. Bae, W. Shin,
I. B. Kang
LG Display, Korea

Effect of the underlying buffer layer on device performance of selfaligned top-gate oxide TFTs on plastic substrate was investigated. The
device performance was affected dramatically by various buffer
deposition conditions. We also successfully developed self-aligned topgate oxide TFTs on plastic substrate using optimized buffer deposition
conditions.

200

Friday
FLX6 - 2L
13:45

December 6
Evaluation of Two Flexible Substrate Technologies
by Low Temperature (200oC) IGZO TFT Process
C.-C. Chen, H.-C. Zang, S.-T. Huo, Z.-H. Ling, J. Ma,
X.-F. Li*, L.-L. Chen*, J.-H. Zhang*
Tianma Micro-Elect. Group, China*Shanghai Univ., China

IGZO TFT array was fabricated on a Ployimide (PI) ﬂexible substrate at
200oC. Two methods of laminating the PI substrate on carrier glass
plate have been examined. This paper demonstrated and analyzed the
TFT device performances in terms of the two different lamination
methods.
FLX6 - 3L
14:00

Low-Temperature IGZO TFT Backplane and Its
Application in Flexible AMOLED Displays on
Ultrathin Polymer Films
J.-L. P.J. van der Steen, A. K. Tripathi, J. Maas,
K. van Diesen-Tempelaars, L. van Leuken, G. de Haas,
B. van der Putten, I. Yakimets, F. Li, T. Ellis, T. van Mol,
G. Gelinck, K. Myny*, P. Vicca*, S. Smout*, M. Ameys*,T. H. Ke*, S. Steudel*, M. Nag*, S. Schols*, J. Genoe*,
P. Heremans*, Y. Fukui**, S. Green***Holst Ctr., the Netherlands*imec, Belgium**Panasonic, Japan***Victrex Polymer Solutions, UK

We present a low-temperature metal oxide transistor backplane
technology using PECVD dielectrics. We show successful integration of
the backplane in ﬂexible 200 ppi AMOLED displays on ultrathin
polymer ﬁlms. The displays are encapsulated with a thin-ﬁlm barrier
and the total stack thickness is less than 150 µm.
Author Interviews and Demonstrations
16:40 – 17:20

201

FLX

Supporting Organizations:Technical Group on Information Display, ITE
Technical Committee on Electronic Information Displays, Electronics
Society, IEICE

Wednesday

December 4Workshop on Touch Panels andInput Technologies
Wednesday, December 4
14:00 - 15:25

Small Hall

INP1: Touch Panel (1) & Haptics
Chair:
Co-Chair:

H. Noma, Ritsumeikan Univ., Japan
H.-S. Koo, Minghsin Univ. of S&T, Taiwan

INP1 - 1:
14:00

Invited Risk Management for Pressure Ulcers Using
MEMS Tactile Sensor
H. Noma, K. Lee*
Ritsumeikan Univ., Japan*Osaka Univ., JapanWe evaluated FEM simulation of human skin deformation to prevent
pressure ulcers in this paper. The results shows that both pressure andshear force causes huge inner skin deformation, so tactile sensor thatcan measure 3D force is necessary for ulcer management.
INP1 - 2:
14:25

Invited A Deformation Detection Touch Panel using a
Piezoelectric Poly(L-lactic acid) Film
M. Ando*,***, H. Kawamura*, H. Kitada*, Y. Sekimoto*,
T. Inoue*, S. Nishikawa**, M. Yoshida**, K. Tanimoto**,Y. Tajitsu****Murata Manufacturing, Japan**Mitsui Chems., Japan***Kansai Univ., Japan

Poly(L-lactic acid) (PLLA) is a well-known, eco-friendly polymer used inpiezoelectric applications for sensors. This material does not exhibit
pyroelectricity. In this study, we successfully produced a deformation
detection touch panel using a piezoelectric PLLA ﬁlm. This ﬂexible
apparatus shows considerable potential for future sensor applications.
INP1 - 3
14:50

Driving Schema of High Integrated Panel with TSP
and 3D
D.-W. Kuo, J.-S. Liao, H.-H. Chen, H.-M. Su, W.-T. Tseng
Chunghwa Picture Tubes, Taiwan

Chunghwa Picture Tubes, LTD. (CPT) has presented an improved
architecture for integrating TSP into 3D. Comparing with conventional
structures, it can effectively decrease cost of manufacturing process
and glasses. Besides, we also have presented the driving architecture
to provide a driving method which has high integration for TSP+3D
architecture.

202

Wednesday
INP1 - 4L
15:10

December 4
AdDetect: Recognition above the Surface in MultiTouch Tabletop Environments
T. Terada, H. Nonaka, T. Yoshikawa, H. Mi*, M. Sugimoto
Hokkaido Univ., Japan*Univ. of Tokyo, Japan----- Break ----15:40 - 17:20

Mid-sized Hall B

INP2/DES2: AR/VR Interactive Systems
Special Topics of Interest on Augmented Reality and Virtual Reality
Chair:
Co-Chair:N. Sakata, Osaka Univ., Japan
N. Hashimoto, Citizen Holdings, Japan

INP2/
DES2 - 1:
15:40

Invited Reality Beyond Its Physicality
M. Inami
Keio Univ., Japan

What are the challenges in creating interfaces that allow a user tointuitively express his/her intentions? Todayʼs HCI systems are limited,and exploit only visual and auditory sensations of technologies. We will
introduce several approaches that use multi/cross modal interfaces
with “implicit interaction” for enhancing human I/O.
INP2/
DES2 - 2:
16:10

Invited A Tablet Interface for Laying Out AR Objects-Outlook of Relationship with Smartphone and ARN. Sakata, R. Nagashima, S. Nishida
Osaka Univ., JapanWe describe a new method for accurate manipulation of AR objects at
a distance. We address this problem and show how combining AR
technology with touch pad operations such as tapping, dragging, andpinching can provide an easy way to position remote AR objects withhigh accuracy.
INP2/
DES2 - 3:
16:35

Invited The Possibility of the Eyeglass-Type Mobile
Phone
T. Horikoshi
NTT DoCoMo, Japan

The possibility of eyeglass-type devices for mobile use is discussed.
We introduce a prototype of a hands-free videophone that can capture
the wearerʼs own face by using seven head-mounted ﬁsh-eye cameras,
and allows video calls to be made without holding the phone.

203

INP

In this paper, we propose an approach to recognizing both touches ona tabletop surface and physical objects above it. We present an outlineof our system and several example applications. Demonstrations of thesystem will be conducted in the conference site.

Wed./Thu.
INP2/
DES2 - 4
17:00

December 4/5
A Cartoon-Character Costume with Active Facial
Expression
Y. Oka, M. Yamamoto
Niigata Univ., Japan

We propose a cartoon-character costume. The costume equips a web
camera and display panel. The system of the costume is able tochange facial expressions and looks freely. The actor wearing thecostume is able to play more than one role in the costume of one body.
Author Interviews and Demonstrations
17:20 – 18:00

Thursday, December 5
9:00 - 12:00

Main Hall C

Poster INPp: Touch Panel
INPp - 1

Touch Sensing Optimization for Large Size
Capacitive Touch Panel
C. Ye, C. Chang, R. Fu, J. Qiu, Y. Lin
China Star Optoelect. Tech., China

We proposed a method to decrease the RC loading in large size
mutual capacitive type touch panel. A novel electrode structure isemployed and also easy to modify to decrease the RC loading
effectively. Moreover, we come out a non-symmetric mutual
capacitance distribution design of sensor pattern.
INPp - 2

A-Si Touch Driver Integrating with Gate Driver for
Flat Panel Display Application
G.-T. Zheng, M.-C. Wu, P.-T. Liu*, R.-J. Chen*,
F.-J. Yang*, C.-Y. Wu**Nat. Tsing Hua Univ., Taiwan*Nat. Chiao Tung Univ., Taiwan**Giantplus Tech., Taiwan

In this paper, the proposed touch driver on array (TOA) for a-Si
technology integrated with the gate driver on array (GOA) has been
demonstrated. The proposed design replaces the touch IC fordelivering part and transfers the touch signals to the sensing circuit for
IC.

204

Thursday
INPp - 3

December 5
A Novel Stylus for LCD Base on Capacitive Touch
Y.-L. Ho, M.-C. Weng, Y.-C. Chen, H.-H. Chen, H.-M. Su,
W.-Z. Zeng
Chunghwa Picture Tubes, Taiwan

INPp - 4

Multi-Source Touch Implementation in Multi-Touch
System
J.-H. Chen, Y.-C. Kang
AU Optronics, Taiwan

Touch control system has been widely used on many devices. But mostproducts only apply one type of touch technology and the usage oftouch system is limited at all. We propose a technology which
integrates multi type of touch system and widely increase the purposeof touch system.
----- Lunch ----13:30 - 15:00

Small Hall

INP3: Touch Panel (2)Chair:
Co-Chair:R. Hattori, Kyushu Univ., Japan
M. Miyamoto, Sharp, Japan

INP3 - 1:
13:30

Invited Single ITO Layer Multi-Touch Sensor Panel
R. Hattori, K. Kyoung, R. Yoneda
Kyushu Univ., Japan

We present three types of wireless power transmission systems formobile devices using inductive and capacitive coupling and a radio
wave. Capacitive coupling provides a wider reception area than
inductive coupling. A radio wave receiving type system has a longer
transmission distance than the others; however, it has lower efﬁciency.
INP3 - 2:
13:55

Invited How to Realize High SNR Projected
Capacitive Touch Systems with Very Large Format
M. Miyamoto
Sharp, Japan

SNR enhancement techniques for projected capacitive touch systems
are introduced. They achieve: (i) uniﬁed touch user interface for wide
range of applications from smart phone size up to over 100-in., and (ii)passive stylus input with tip diameter less than 2 mm.

205

INP

CPT has developed a stylus for dual mode touch. The stylus can touchon the screen with wide sensor pitch. The stylus tip is 0.8 mm and thesensor pitch is 5.4 mm. In addition, the stylus touch accuracy can beless than 1 mm. So it will be more accurately in writing.

Thursday
INP3 - 3
14:20

December 5
Noise Immunity Enhancement for Capacitive TouchScreens
D. Sugimoto, H. Haga, K. Takatori, H. AsadaNLT Techs., Japan

Correlated Noise Subtraction (CNS) has been demonstrated by
implementing it into an FPGA on a touch-screen controller board. Our
prototype shows the improvement in S/N ratio from 5.98 to 27.9,
reduction of jitter and smooth tracking of ﬁnger movement under anenvironment where noise frequency coincides with signal frequency.
INP3 - 4
14:40

High Efficient Anti-Noise Touch in Cell Display
C.-Y. Hsu, S.-Z. Peng, S.-H. Huang, H.-H. Chen, H.-M. Su
Chunghwa Picture Tubes, Taiwan

Chunghwa picture tubes, LTD. has been successive to develop a 4.5-in.
capacitive touch in cell (TIC) with a-Si wide view angle HD (780x1280)
LCD. We proposed innovative structure not only solve noise problem
from display in normal capacitive touch in cell (TIC) type, but also canbe decreased RC loading in sensor pattern design.
----- Break ----15:10 - 16:30

Small Hall

INP4: 3D/2D Imaging Systems
Chair:
Co-Chair:C. Niclass, Toyota Central R&D Labs., JapanK. Kagawa, Shizuoka Univ., Japan

INP4 - 1:
15:10

Invited Long-Range 3D Imaging in CMOS for Road
Environment Recognition
C. Niclass, M. Soga, H. Matsubara, M. Ogawa,M. Kagami, T. Yamashita, T. Naito
Toyota Central R&D Labs., Japan

With the increasing interest in long-range 3D imaging for advanced
driver assistance systems, we introduce a time-of-ﬂight sensor in
CMOS technology that achieves ranges of up to 100 m with a resolutionof 202x96 pixels at 10 frames/s. The proposed sensor concept acquires
real-time 3D images in challenging daylight conditions.

SID Display Week 2014
June 1 – 6, 2014
San Diego Convention Center
San Diego, California, U.S.A.
206

Thursday
INP4 - 2
15:35

December 5Time-Multiplexed 3D Camera System with an
Electro-Optical Filter Alternately Transmitting Visible
and Near Infrared Radiation
J. Shin, J. Osterman*, B. Kang, K. Lee, J. D.K. Kim
Samsung Advanced Inst. of Tech., Korea*LC-Tec Displays AB, Sweden

INP4 - 3
15:55

Optical Pixel-Sensor Array Using TFT Technology as
Image-Scan/Fingerprint Panel
A.-T. Cho, C. Chang, Z.-S. Zheng, J.-F. Cho, H.-L. Hsieh,
J.-H. Jan, J.-W. Chen, A. Liu, R.-C. Cheng, J.-P. Tseng,
J.-J. Chang, M.-F. Chiang, Y.-C. Lin
AU Optronics, Taiwan

We report the nano-Si photonic sensor integrated in TFT technology as
Image-scan/Fingerprint. We using nano-Si as sensitizer sandwiched
between two electrodes structure, and integrating optical input function
for image scanner, ﬁngerprint recognition application. A 1-transistor
passive pixel sensor is used to integrate 500 ppi image sensor
elements within each pixel.
INP4 - 4L
16:15

Multi-Mode Simultaneous Image Acquisition with
Integrated Compound-Eye Camera for Human
Interface: Wide-Angle Video, 3D Gesture
Recognition, and Eye Tracking
K. Kagawa, K. Shimonomura*, S. Kawahito
Shizuoka Univ., Japan*Ritsumeikan Univ., Japan

A multi-mode integrated compound-eye camera that will simultaneously
offer multiple functions is proposed. A prototype camera is designed
and fabricated. Field-of-view of 62 degrees is realized by combining 5
elemental images with 4 sets of two prism mirrors. Two sets of visible
and near-infrared stereoscopic images are also obtained.
Author Interviews and Demonstrations
18:30 – 19:10
Supporting Organizations:
Human Interface Society
Information Sensing Research Committee, ITE

207

INP

We developed time-multiplexed 3D camera system based on time-ofﬂight technology using an electro-optical ﬁlter alternately transmitting
visible and NIR radiation. Experimental measurements a polarizer
based ﬁlter prototype shows 18% of visible and 25% of NIR lighttransmittance. The fast switching of the modulator reduces motion
artifacts in the camera system.

IDW ’13 COMMITTEESORGANIZING COMMITTEE

General Chair:
General Vice-Chair:Representative (ITE):		
Representative (SID):		Standing:
		
		
		
		
		
		
		
		
Auditor:Y. Iimura
K. Betsui
S. Takamura
H. Fujikake
K. Kondo
T. Tsujimura
K. Azuma
K. Ishikawa
R. Hattori
S. Mikoshiba
S. Naemura
H. Okumura
M. Omodani
Y. Shimodaira
Y. Yamamoto
H. Sakurai

Tokyo Univ. of A&T
HitachiNTT
Tohoku Univ.
Sharp
Konica Minolta
Shimadzu
Tokyo Inst. of Tech.
Kyushu Univ.
Univ. of Electro-Commun.
Univ. of Southampton
Toshiba
Tokai Univ.
Shizuoka Univ.
Semiconductor Energy Lab.
Asahi GlassOVERSEAS ADVISORS

Overseas Advisor:
		
		
		
		
		
		
		
		
		
		
		
		

M. Anandan
Organic Lighting Tech., USA
J. Chen
ITRI, Taiwan
N. Fruehauf
Univ. of Stuttgart, Germany
M.-K. Han
Seoul Nat. Univ., Korea
I. Heynderickx Philips Res. Labs., the Netherlands
J. Jang
Kyung Hee Univ., Korea
Hong Kong Univ. of S&T, Hong Kong
H.-S. Kwok
F.-C. Luo
AU Optronics, Taiwan
J.-N. Perbet
Thales Avionics, France
K. R. Sarma
Honeywell Int., USA
Nat. Chiao Tung Univ., Taiwan
H.-P. D. Shieh
D. Theis
Tech. Univ. Munich, Germany
L. F. Weber
Consultant, USA

EXECUTIVE COMMITTEE

Executive Chair:
K. Azuma
Executive Vice-Chair:
S. Komura		
K. Takatori		
T. Shiga
Program Chair:
K. Ishikawa
Program Vice-Chair:
Y. Gotoh
Program Secretary:
O. Akimoto
		
M. Date		
H. Fujikake		Y. Kijima		M. Kimura		
H. Kominami
		T. Matsumoto		Y. Nakai		
M. Shinohara
Publication Chair:
K. Ishii
Publication Vice-Chair: H. Kumomi
Publication:
H. Kawamura
Local Arrangement Chair: T. Katoh
Local Arrangement Vice-Chair: H. Kato
Local Arrangement:
K. Fujiwara
208

Shimadzu
Japan Display
NLT Techs.
Univ. of Electro-Commun.
Tokyo Inst. of Tech.
Kyoto Univ.
Sony
NTT
Tohoku Univ.
Sony
Ryukoku Univ.
Shizuoka Univ.
Sony
Toshiba
Omron
NHKTokyo Inst. of Tech.
NTT
ZEON
Sharp
Sharp

		
Y. Sakamoto
		H. Sakurai
Exhibition Chair:
K. Azuma
Financial Supporting Chair: K. Azuma
Treasurer:
T. Numao
Vice Treasurer:
K. Takatori
General Secretary:
K. Betsui		
A. Honma
Senior Member:
M. Omodani		
H. Okumura
Members:
H. Arai		
I. Fujieda
		N. Hashimoto		
M. Inoue		
M. Inoue		
H. Kanayama
		S. Kaneko
		S. Kobayashi
		
S. Koike		
T. Komaki		
H. Kuma		S. Maeda
		
A. Mikami
		T. Miyashita		Y. Nishimura		
S. Okabayashi
		A. Sasaki		T. Shinoda
		
K. Suzuki		M. Suzuki		
H. Takanashi		Y. Toko		
M. Tsumura
		T. Uchida		M. Uchidoi		
H. Uchiike
		Y. Yanagi		
H. Yokoyama		M. Yuki

WORKSHOP CHAIR

LCT
AMD
FMC
PDP
PH
FED
OLED
3D
VHF
PRJ
EP
MEET
DES
FLX
INP

H. Okada
Y. Fujisaki
T. Miyashita
H. Kajiyama
Y. Nakanishi
H. Mimura
T. Wakimoto
S. YanoT. Kurita
H. Kanayama
H. Arisawa
M. Nakamoto
H. Okumura
H. Fujikake
K. Nakatani

Hokkaido Univ.
Asahi Glass
Shimadzu
Shimadzu
Sharp
NLT Techs.
HitachiZEON
Tokai Univ.
Toshiba
FPD NetRitsumeikan Univ.
Citizen Holdings
Innolux
Apple
Panasonic
NLT Techs.
Tokyo Univ. of Sci., Yamaguchi
Seiko Epson
Panasonic
Idemitsu Kosan
Tokai Univ.
Kanazawa Inst. of Tech.
Tohoku Inst. of Tech.
AKT
Meijyo Univ.
Kyoto Univ.
Shinoda Plasma
Toshiba Res. Consulting
Merck
Sony
Stanley Elec.
HitachiSendai Nat. College of Tech.
Saga Univ.
Lumiotec
Kent State Univ.
Asahi Glass
Univ. of Toyama
NHK
Tohoku Inst. of Tech.
Tokushima Bunri Univ.
Shizuoka Univ.
Shizuoka Univ.
Merck
Shimane Univ.
NHK
Panasonic
Fuji Xerox
Shizuoka Univ.
Toshiba
Tohoku Univ.
Touchpanel Labs.

209

PROGRAM COMMITTEE

Program Chair:
Program Vice-Chair:
Program Secretary:
		
		
		
		
		
		
		
		
Committee:
LCT
AMD
FMC
PDP
PH
FED
OLED
3D
VHF
PRJ
EP
MEET
DES
FLX
INP

K. Ishikawa
Y. Gotoh
O. Akimoto
M. DateH. Fujikake
Y. Kijima
M. Kimura
H. Kominami
T. Matsumoto
Y. NakaiM. Shinohara

Tokyo Inst. of Tech.
Kyoto Univ.
Sony
NTT
Tohoku Univ.
Sony
Ryukoku Univ.
Shizuoka Univ.
Sony
ToshibaOmron

T. Ishinabe
H. Kumomi
R. Yamaguchi
K. Ishii
N. Miura
H. Shimawaki
K. Monzen
M. Tsuchida
K. Masaoka
S. Koike
T. Fujisawa
Y. NakaiR. Hattori
M. ItoK. KagawaTohoku Univ.
Tokyo Inst. of Tech.
Akita Univ.
NHK
Meiji Univ.
Hachinohe Inst. of Tech.
Nissan Chem. Inds.
NTT
NHK
Seiko Epson
DIC
Toshiba
Kyushu Univ.
Toppan Printing
Shizuoka Univ.

Workshop on LC Science and Technologies

Workshop Chair:
Program Chair:
Program Vice-Chair:		General Secretary:
Program Committee:
		
		
		
		
		
		
		
		
		
		
		
		
		
		

H. Okada
T. Ishinabe
M. Suzuki
S. Komura
M. Inoue
M. Funahashi
K. Hatsusaka
I. Hirosawa
S. Ishihara
K. Ishikawa
A. Kubono
K. Miyachi
M. Nishikawa
T. NoseS. OkaM. OzakiS. Shibahara
T. Takahashi
H. Wakemoto
T. Yamaguchi

Workshop on Active Matrix Displays

Workshop Chair:
Program Chair:
Program Vice-Chair:
General Secretary:
Program Committee:		210

Y. Fujisaki
H. Kumomi
M. Inoue
H. Minemawari
A. Arias
K. Azuma

Univ. of Toyama
Tohoku Univ.
Merck
Japan Display
Apple
Kagawa Univ.
DIC
JASRI
Osaka Inst. of Tech.
Tokyo Inst. of Tech.
Shizuoka Univ.
Sharp
JSR
Akita Pref. Univ.
Japan Display
Osaka Univ.
Sony
Kogakuin Univ.
Japan DisplayJNC Petrochem.
NHKTokyo Inst. of Tech.
Innolux
AIST
Univ. of California, Berkeley
Shimadzu

		
		
		
		
		
		
		
		
		
		
		
		

E. Fortunato
H. Hamada
M. Hiramatsu
S. Horita
H. KimM. KimuraN. Morosawa
T. Noguchi
K. Suga
K. Takatori
Y.-H. Yeh
T. Ozawa

New Univ. of Lisbon
Kinki Univ.
Japan Display
JAIST
Yonsei Univ.
Ryukoku Univ.
Sony
Univ. of the Ryukyus
Sharp
NLT Techs.
ITRI
AU Optronics

Workshop on FPD Manufacturing, Materials and Components

Workshop Chair:
Program Chair:
Program Vice-Chair:
General Secretary:
Program Committee:
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		

T. Miyashita
R. Yamaguchi
M. Shinohara
T. Tomono
I. Amimori
T. Arikado
K. Dantani
A. Fujita
T. Hotta
Y. Iimura
K. Käläntär
T. Katoh
C.-C. Lee
M. Miyatake
N. Miyatake
Y. Mizushima
Y. Murata
T. Nonaka
Y. Saitoh
H. Sakurai
S. Takahashi
T. Takeda
Y. UkaiT. Unate
T. Yanagimoto
Y. Yang

Workshop on Plasma Displays

Workshop Chair:
Program Chair:
General Secretary:
Program Committee:
		
		
		
		

H. Kajiyama
K. Ishii
T. Shiga
S. Mikoshiba
R. Murai
Y. Nakao
T. Shinoda
M. Uchidoi

Tohoku Inst. of Tech.
Akita Univ.
Omron
Toppan Printing
A51 TechTokyo Electron
ATMI JapanJNC
DNPTokyo Univ. of A&T
Global Optical Solutions
ZEON
ITRI
Nitto Denko
Mitsui Eng. Shipbuilding
Corning Holding JapanULVACAZ Elec. Materials
FUJIFILM
Asahi GlassNOF
Nagase ChemteX
UDDI
UNATE
Nippon Steel Chem.
Japan Display

Tokushima Bunri Univ.
NHK
Univ. of Electro-Commun.
Univ. of Electro-Commun.
Panasonic
Asahi Glass
Shinoda Plasma

Workshop on EL Displays and Phosphors

Workshop Chair:
Program Chair:
General Secretary:
Program Vice-Chair:
Program Committee:				

Y. Nakanishi
N. Miura
N. Matsuda
K. Hara
T. Hisamune
S. Itoh
D. JeonShizuoka Univ.
Meiji Univ.
Toshiba
Shizuoka Univ.
Mitsubishi Chem.
Futaba
KAIST
211

		
		
		
		
		
		
		
		
		

H. Kobayashi
T. Kunimoto
T. Kusunoki
T. Miyata
K. Ohmi
D. Poelman
M. Shiiki
K. Wani
R. XieTottori Univ.
Tokushima Bunri Univ.
Dexerials
Kanazawa Inst. of Tech.
Tottori Univ.
Gent Univ.
HitachiTAZMO
NIMS

Workshop on Field Emission Display and CRT

Workshop Chair:
Program Chair:
General Secretary:
Program Committee:
		
		
		
		
		
		
		

H. Mimura
H. Shimawaki
M. Namba
Y. Gotoh
J. Ishikawa
K. Koga
M. Nagao
M. Nakamoto
S. Okuda
M. TakaiF. Wakaya

Shizuoka Univ.
Hachinohe Inst. of Tech.
NHKKyoto Univ.
Chubu Univ.
Panasonic Healthcare
AIST
Shizuoka Univ.
Okuda
Osaka Univ.
Osaka Univ.

Workshop on OLED Displays and Related Technologies

Workshop Chair:
Program Chair:
Program Vice-Chair:
General Secretary:
Vice-Secretary:
Program Committee:
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		

T. Wakimoto
K. Monzen
T. Ikuta
T. Uchida
S. Naka
C. Adachi
S. Aratani
S. Enomoto
T. Fukuda
R. Hattori
T. Inoue
Y. Kijima
T. Komatsu
H. Kuma
A. Mikami
H. Miyazaki
H. Murata
K. Nakayama
Y. SakaiT. Shimizu
S. Tokito
T. Tsuji

Merck
Nissan Chem. Inds.
JNC Petrochem.
Tokyo Polytechnic Univ.
Univ. of Toyama
Kyushu Univ.
HitachiToshiba Lighting & Tech.
Saitama Univ.
Kyushu Univ.
TDK
Sony
Panasonic
Idemitsu Kosan
Kanazawa Inst. of Tech.
Kyushu Univ.
JAIST
Yamagata Univ.
Mitsubishi Chem.
NHK
Yamagata Univ.
PioneerWorkshop on 3D/Hyper-Realistic Displays and Systems

Workshop Chair:
Program Chair:
General Secretary:
Program Committee:
		
		
		
		
		
		
		
212

S. YanoM. Tsuchida
K. Yamamoto
T. Fujii
T. Koike
T. Mishina
S. Ohtsuka
J. SonC.-H. Tsai
M. Tsuboi
H. Yamamoto

Shimane Univ.
NTT
NICT
Nagoya Univ.
Hosei Univ.
NHK
Kagoshima Univ.
Konyang Univ.
ITRI
NTT DoCoMo
Univ. of Tokushima

Workshop on Applied Vision and Human Factors

Workshop Chair:
Program Chair:
General Secretary:
Program Committee:
		
		
		
		
		
		
		
		
		
		
		
		

T. Kurita
K. Masaoka
T. Matsumoto
J. Bergquist
S. Clippingdale
N. Hiruma
Y. Hisatake
M. Idesawa
H. IsonoA. Morishita
K. Sakamoto
Y. Shimodaira
J. Someya
T. TamuraA. Yoshida
R. Yoshitake

NHK
NHK
Sony
Nokia
NHK
NHK
Japan Display
Univ. of Electro-Commun.
Tokyo Denki Univ.
Toshiba
Panasonic
Shizuoka Univ.
Mitsubishi Elec.
Tokyo Polytech. Univ
Sharp
IBM Japan

Workshop on Projection and Large-Area Displays and Their
Components

Workshop Chair:
Program Chair:
Program Vice-Chair:		General Secretary:
Program Committee:
		
		
		
		
		
		
		
		
		
		
		
		

H. Kanayama
S. Koike
O. Akimoto
S. Shikama
T. Suzuki
Y. Asakura
K. GotoT. Hayashi
J. Park
H. Kikuchi
H. NakanoT. Ogura
K. Ohara
S. OuchiH. Sugiura
Z. Tajima
M. Takaso
K. Takeda

Workshop on Electoronic Paper

Workshop Chair:
Program Chair:
Program Vice-Chair:
General Secretary:
Program Committee:
		
		
		
		
		
		
		
		

H. Arisawa
T. Fujisawa
N. Kobayashi
Y. Toko
M. Higuchi
Y. Hotta
T. Kitamura
S. Maeda
M. Omodani
N.-S. Roh
A. Suzuki
M. Tsuchiya
G. Zhou

Panasonic
Seiko Epson
Sony
Setsunan Univ.
JVC KENWOOD
Nittoh Kogaku
Ushio
3M
Gyeongsang Nat. Univ.
NHK
Barco
Shincron
Texas Instr. Japan
Hitachi
Mitsubishi Elec.
Mobara Atecs
Techno Sys. Res.

Fuji Xerox
DIC
Chiba Univ.
Stanley Elec.
NIMS
Ricoh
Chiba Univ.
Tokai Univ.
Tokai Univ.
Samsung Display
Chiba Univ.
Innova Dynamics
Philips Res.

Workshop on MEMS and Emerging Technologies for Future
Displays and Devices

Workshop Chair:
Program Chair:
General Secretary:

M. Nakamoto
Y. NakaiT. Komoda

Shizuoka Univ.
Toshiba
Panasonic213

Program Committee:
		
		
		
		
		
		
		
		
		
		
		
		
		

T. Akinwande
G. Barbastathis
M. Esashi
H. Fujita
J. Jang
H. Kikuchi
J. Kim
K. Matsumoto
W. Milne
S. Sugiyama
H. Tuller
S. Uchikoga
J.-B. Yoon
Y. Yoshida

MITMIT
Tohoku Univ.
Univ. of Tokyo
Kyung Hee Univ.
NHK
Univ. of Oxford
Olympus
Univ. of Cambridge
Ritsumeikan Univ.
MIT
Toshiba
KAIST
Mitsubishi Elec.

Workshop on Display Electronic Systems

Workshop Chair:
Program Chair:
General Secretary:
Vice-Secretary:
Program Committee:
		
		
		
		
		
		
		
		
		
		
		
		
		

H. Okumura
R. Hattori
S. Takamura
T. Yamamoto
T. Fujine
K. Kagawa
K. Käläntär
L. Kerofsky
T. Kim
H. Nam
O.-K. Kwon
K. Makita
K. Morita
A. Nagase
H. Nitta
S. OnoA. Sakaigawa
K. Sekiya

Workshop on Flexible Displays

Workshop Chair:
Program Chair:
General Secretary:
Program Committee:
		
		
		
		
		
		
		
		
		
		
		
		
		

H. Fujikake
M. ItoH. Maeda
K. Akamatsu
T. Eguchi
M. Funahashi
T. Furukawa
H. Hirata
T. KamataM. KimuraY. Mishima
M. NakataT. Sekitani
T. Shiro
K. Takimiya
T. Tomono
K. UemuraToshiba
Kyushu Univ.
NTT
NHK
Sharp
Shizuoka Univ.
Global Optical Solutions
Sharp Labs. of America
Apple
Kyung Hee Univ.
Hanyang Univ.
AISTNat. Traffic Safety & Environment Lab.
Mitsubishi Elec.
HitachiPanasonic
Japan Display
Kanagawa Inst. of Tech.

Tohoku Univ.
Toppan Printing
DNP
Sony
Sumitomo Bakelite
Kagawa Univ.
Yamagata Univ.
Toray Eng.
AIST
Nagaoka Univ. of Tech.
FUJIFILM
NHK
Univ. of Tokyo
TeijinRIKEN
Toppan Printing
Nippon Steel & Sumitomo Metal

Workshop on Touch Panels and Input Technologies

Workshop Chair:
Program Chair:
General Secretary:
Program Committee:
214

K. Nakatani
K. KagawaI. Mihara
I. Fujieda

Touchpanel Labs.
Shizuoka Univ.
Toshiba
Ritsumeikan Univ.

		
		
		
		
		
		
		
		
		
		

H. Haga
N. Hashimoto
M. Inoue
H. KatoF. KooY. Mizushima
T. Nakamura
H. Noma
H. Okumura
Y. Sasaki

NLT Techs.
Citizen Holdings
Innolux
Sharp
Minghsin Univ. of S&T
Corning Holding Japan
Japan Display
Ritsumeikan Univ.
Toshiba
Mitsubishi Elec.

Special Topics of Interest on Oxide TFT

Facilitator:
Program Committee:
AMD:
FMC:
OLED:
FLX:

M. Kimura

Ryukoku Univ.

H. Kumomi
R. Yamaguchi
T. Uchida
T. Sekitani

Tokyo Inst. of Tech.
Akita Univ.
Tokyo Polytechnic Univ.
Univ. of Tokyo

Special Topics of Interest on Augmented Reality and Virtual
Reality

Facilitator:
Vice Facilitator:
Program Committee:
3D:
VHF:
		
PRJ:
DES:
INP:

H. Okumura
M. DateToshibaNTT

M. Tsuchida
T. Matsumoto
T. Kurita
O. Akimoto
K. Makita
I. Mihara

NTT
Sony
NHK
Sony
AIST
ToshibaSpecial Topics of Interest on Lighting Technologies

Facilitator:
Program Committee:
FMC:
PH:
OLED:

Y. KijimaSony

M. Shinohara
K. HaraT. Ikuta

Omron
Shizuoka Univ.
JNC Petrochem.

FINANCIAL SUPPORTING ORGANIZATIONS (as of November 1, 2013)
ADEKA CORPORATION
Applied Materials, Inc.
ASAHI GLASS CO., LTD.
Corning Holding Japan GK, Corning Technology Center
JNC CORPORATIONJSR Corporation
Nichia Corporation
Semiconductor Energy Laboratory Co., Ltd.
SHARP CORPORATIONTOKYO ELECTRON LIMITEDUbe Material Industries, Ltd.

SUPPORTING MEMBERS (as of November 1, 2013)
EIZO Corporation
JAPAN BROADCASTING CORPORATION
Merck Ltd. JapanNLT Technologies, Ltd.
Panasonic Corporation AVC Networks Company
SHIMADZU CORPORATION
Toshiba Corporation
ULVAC, Inc.
ZEON CORPORATION

215

COMPANIES LIST OF EXHBITORS (as of November 1, 2013)
Fraunhofer COMEDD
Japan Science Engineering Co., Ltd.
KONICA MINOLTA, INC.
NAGASE & CO., LTD.
PTT Company Limited
SHINTECH, Inc.
SILVACO Japan., Ltd.
Soken Chemical & Engineering Co., Ltd.
TOYO Corporation
Wexx Co., Ltd.

UNIVERSITIES LIST OF EXHIBITORS (as of November 1, 2013)

Demonstration Session
Augmented Reality and Virtual Reality(AR & VR)
by 3D, VHF, PRJ, DES and INP Workshops
Thursday, December 5, 2013
14:50 – 17:50
Main Hall C, 1F

IDW ’14The 21st International Display Workshops
December 3 – 5, 2014
Toki Messe Niigata Convention Center
Niigata, Japan
http://www.idw.ne.jp
216

AR & VR Demonstrations

Kanagawa Univ.
Maeda Lab., Tokai Univ.
Mutsu Matsu Lab./Ryukoku Extension Center, Ryukoku Univ.
Nagaoka Univ. of Technology
Nakamoto Lab., Shizuoka Univ.
Suyama and Yamamoto Lab., Univ. of Tokushima
Univ. of the Ryukyus
Electron Device Engineering Labs., Univ. of Toyama

Entrance

B

Conference
Hall

Registration

Cloak

A

C

A

B

Mid-sized Hall

Keynote and
The 20th Anniversary Addresses

Reception

Exhibition

Main Hall

102

104

Secretariat

108

Restaurant
SORA

Evening
Get Together

The 20th
Anniversary
Exhibition

Speaker
Preparation
Room

Posters / Author Interviews and Demonstrations

AR & VR Demonstrations

1F

FLOOR MAP
N

217

218

Small
Hall
204

206

2F

Registration
17:00-20:00

Conference Hall

Main Hall A

Main Hall B

Mid-sized Hall A Mid-sized Hall B

IDW ’13 Special Topics of Interest Navigator

Small Hall

204

206

Main Hall C

1F Lobby

Wednesday, December 4

Opening,
Keynote & the 20th
Anniversary Addresses
9:30-12:30
Lunch
FMC1
14:00-15:20

Registration
8:00-18:00

DES1
14:00-15:15

LCT1
14:00-15:00

PRJ1
14:00-15:00

LCT2
15:40-16:55

INP2/DES2
15:40-17:20

INP1
14:00-15:25

EP1
14:00-15:25

PDP1
14:00-15:15

PRJ2
15:40-17:20

EP2
15:40-17:10

PDP2
15:50-17:00

Break
FMC2
15:40-17:00

AMDp, OLEDp,
3Dp, VHFp,
AMDp/OLEDp
13:40 - 16:40

Exhibition
12:40-18:00

Conference Main Hall Main Hall Main Hall Mid-sized Main Hall Conference Main Hall Main Hall
Hall
A
B
C
Hall B
C
Hall
A
C
PRJ1:
Projection
AR
AMDp1,
14:00AMDp2,
15:00
VHFp1:
AMDp3/
Poster
INP2/
OLEDp2:
13:40DES2:
Poster
16:40
AR/VR
13:4016:40 Interactive
Systems
15:4017:20

AuthorInterviews &Demonstrations
17:20-18:00

OLED1
9:00-10:30

FMC3
9:00-10:20

AMD1
9:00-10:25

LCT3
9:00-10:25

3D1
9:00-10:15

PRJ3
9:00-10:20

EP3
9:00-10:10

FMC3:
Oxide TFT:
Process
Technologies
9:0010:20

MEET1
9:00-10:25
PHp, FLXp,
INPp
9:00-12:00

Break
OLED2
10:40-12:00

FMC4
10:40-12:00

AMD2
10:40-12:25

LCT4
10:40-12:00

DES3†
10:40-12:25

PRJ4†
10:40-12:35

EP4†
10:40-12:20

AMD2:
Oxide TFT:
Applications
10:4012:25

MEET2
10:40-12:00

Lunch
OLED3
13:30-14:55

FMC5/FLX1
13:30-14:30

AMD3
13:30-14:55

DES4/VHF1
13:30-14:45

INP3
13:30-15:00

Exhibition
10:00-18:00

MEET3
13:30-14:30

Break
OLED4
15:10-16:30

FLX2
15:10-16:20

AMD4
15:10-16:40

FMC6
15:10-16:30

3D2/VHF2
15:10-16:30

INP4
15:10-16:30

PH1
15:10-16:25

MEET4
15:10-16:25

AR & VR
Demonstrations

Break
OLED5
16:50-18:15

FLX3
16:50-18:05

AMD5
16:50-18:10

FMC7
16:50-18:10

LCTp, PRJp,
EPp, DESp

3D3
16:50-18:10

PH2
16:50-18:20

MEET5
16:50-17:50

14:50-17:50

PH3
9:00-9:55

AMD6
9:00-10:20

LCT5
9:00-10:20

3D4
9:00-10:20

DES5
9:00-10:20

VHF3
9:00-10:15

FED1
9:00-10:30

Break

Registration
8:00-13:00
Friday, December 6

FLX5
10:40-11:55

AMD7
10:40-12:20

LCT6
10:40-12:15

3D5
10:40-11:55

DES6
10:40-12:00

VHF4
10:40-12:10

FED2/PH4
10:40-12:10

DES7
13:30-14:50

VHF5
13:30-15:00

FED3
13:30-15:00

DES8
15:10-16:15

VHF6
15:10-16:10

FED4
15:10-16:30

Exhibition
10:00-14:00

FMC8
13:30-15:05

LCT7
13:30-14:30
Break

AuthorInterviews &Demonstrations
16:40-17:20†

Including Short Presentations

Friday, December 6

Lunch
FLX6
13:30-14:15

PHp:
Poster
9:0012:00

DES3†:
Human
Perceptions in
Augmented
Reality
10:4012:25

AR & VR
Demonstrations
14:5017:50

FMCp:
Poster
9:0012:00
FLX6:
Flexible
Oxide TFT
13:3014:15

3D1:
Practical
3D
Systems
9:0010:15

DESp:
Poster

AMD5:
Oxide
TFT:
Modeling& Devices
16:5018:10

FMCp
9:00-12:00

OLEDp1:
Poster13:4016:40

DES4/VHF1:
Sensing
Technologies
for Virtual/
Augmented
Reality
13:3014:45

AMD4:
Oxide
TFT:
Reliability(2)
15:1016:40

AuthorInterviews &Demonstrations
18:30-19:10
FLX4
9:00-10:30

FLXp:
Poster
9:0012:00

AMD3:
Oxide
TFT:
Reliability(1)
13:3014:55

Thursday, December 5Registration
8:00-18:00

Lighting Technologies

Date

Reception at Conference Hall (1F) 18:30-20:30

Thursday, December 5

Augmented Reality
and Virtual Reality

Oxide TFT
Evening Get-Together at Sora (1F) 18:00-20:00

Wednesday, December 4

1F Lobby

Tue.,
Dec. 3

IDW ’13 Timetable
Date

OLED5:
OLED forLighting
Applications
16:5018:15
PH3:
Phosphors
for Lighting
9:00-9:55

FMC8:Lighting
Technologies
13:3015:05

FMCp:
Poster
9:0012:00

IDW ’13 Session Navigator
Wednesday, Dec. 4
9:30-12:30

Thursday, Dec. 5PM

17:20-18:00

Mid-sized Hall A

Main Hall C

AM

Friday, Dec. 6
PM

18:30-19:10

AMPM

16:40-17:20

Conference Hall
Opening, Keynote &Plenary the 20th Anniversary
Addresses
LCT

Keynote & Special
Session (1)Special Session (2)A.I.

Mid-sized Hall A

Main Hall C

Display Mode (1)LC Materials

Advanced Si TFT

Oxide TFT:
Applications

Main Hall C
AMD

FMC

20th Anniversary:
Past, Present, andFuture (1)PDPAdvanced Materials& Discharge

20th Anniversary:
Past, Present, andFuture (2)206Main Hall C
A.I.

Main Hall C

Oxide TFT:
Reliability (1)Oxide TFT:
Reliability (2)Main Hall A
Oxide TFT: Process
Technologies

Materials

Mid-sized Hall A
A.I.

Main Hall B

Posters*
Main Hall A

Posters

Oxide TFT: Modeling& DevicesMid-sized Hall A
Flexible Materials*

Optical Films

Manufacturing

A.I.

Display Mode (2)Main Hall C

Evaluation

Photo Alignment

A.I.

Main Hall B
Novel Applications

Main Hall C

Printed TFT

A.I.

Main Hall C

Main Hall C

Main Hall A

Main Hall C

A.I.

Posters

Lighting
Technologies

A.I.

Main Hall C
Large Screen &Discharge
Applications

A.I.
Main Hall C

PH

204
Phosphors & Their
Applications (1)Posters

Phosphors & Their
Applications (2)Main Hall C

Main Hall A

206

A.I.

Phosphors forLighting

Applications & New
Materials*

Main Hall C
A.I.

206
FED

Novel Devices &Applications
Main Hall C

OLED

Conference Hall

Posters*

Materials & Devices

Main Hall C

Mid-sized Hall B

Posters

Practical 3D
Systems

3D

Display
Technologies

Flexible &Backplane
Technologies

VHF

Mid-sized Hall B
PRJ

Projection
Components

Projection AR
204

EP

New Displays

Main Hall C

Holography

A.I.

A.I.

Visual Comfort for
3D Display*

Posters

Fundamental
Components &Process
Technologies
Main Hall B

DES

Vehicle Applications

Mid-sized Hall B
AR/VR Interactive
Systems*

A.I.

FLX

INP

EL Quantum DotsTechnologies

Posters

Novel Materials &Components

Posters
Main Hall C

Main Hall C

A.I.

Posters

Improving Visual
Experience

Visual Perception

Main Hall C
Color

Display Parameters& Human
Performance

A.I.

A.I.

MEMS Imaging &Sensing

Posters

Advanced
Processes for
Flexible Displays

Mid-sized Hall B

A.I.
204

A.I.

Main Hall C

Sensing
Technologies for
Virtual/Augmented
Reality*
Main Hall A

AR/VR Interactive
Systems*

LCT: Workshop on LC Science & Technologies
AMD: Workshop on Active Matrix Displays
FMC: Workshop on FPD Manufacturing, Materials & Components
PDP: Workshop on Plasma Displays
PH: Workshop on EL Displays & Phosphors
FED: Workshop on Field Emission Display & CRT
OLED: Workshop on OLED Displays & Related Technologies
3D: Workshop on 3D/Hyper-Realistic Displays & Systems

Emerging Quantum
Dots Technologies

Main Hall C

Small Hall

Main Hall C

3D Display (2)Main Hall C

Mid-sized Hall B
Human Perceptions
in Augmented
Reality +Short Presentations

Touch Panel (1) &Haptics

Mid-sized Hall B
3D Display (1)Main Hall C

Evaluations +Short Presentations

Main Hall C

A.I.

A.I.

206
MEET

Main Hall C

A.I.

204
Electrophoretic
Displays

A.I.

Main Hall C

Laser & Speckle
Reduction +Short Presentations

Projection
Technologies

FE Materials &Mechanisms

A.I.

Main Hall C

Small Hall

Main Hall C
Electrochromic
Displays

OLED for Lighting
Applications

Mid-sized Hall B
Sensing
Technologies for
Virtual/Augmented
Reality*

Small Hall

Process
Technologies

Mid-sized Hall B

Posters

Applications & New Fabrication Process
Materials*& CNT Emitters

Main Hall C

Visual Comfort for
3D Display*

Main Hall C

Main Hall C

Flexible Materials*

A.I.
Main Hall C

Carbon RelatedMaterials

Small Hall
Touch Panel (2)Small Hall

3D/2D Imaging
Systems

VHF: Workshop on Applied Vision & Human Factors
PRJ: Workshop on Projection & Large-Area Displays & Their Components
EP: Workshop on Electronic Paper
MEET: Workshop on MEMS & Emerging Technologies for Future Displays & Devices
DES: Workshop on Display Electronic Systems
FLX: Workshop on Flexible Displays
INP: Workshop on Touch Panels & Input Technologies

A.I.

Display Driving (1)Display Driving (2)Main Hall C

Low Power Systems

Conference Hall
Substrates &Advanced Devices
Materials for Flexible& Materials
Displays

Main Hall C
A.I.
A.I.: Author Interviews & Demonstrations*: Joint Session

Display Electronic
Systems

A.I.
Main Hall C

Flexible
Oxide TFT

A.I.

IDW ’13 Secretariat:
c/o Bilingual Group Ltd.
3-3-6 Kudan Minami, Chiyoda-ku,
Tokyo 102-0074, Japan
Phone：+81-3-3263-1345
FAX：+81-3-3263-1264
E-mail：idw@idw.ne.jp

IDW ’13
FINAL PROGRAM

http://www.idw.ne.jp/

IDW ’13

THE 20TH INTERNATIONALDISPLAY WORKSHOPS
Special Topics of Interest on• Oxide TFT• Augmented Reality and Virtual Reality• Lighting Technologies

Workshops on

Sapporo Convention Center
Sapporo, Japan
December 4(Wed) – 6(Fri), 2013

Final Program• LC Science and Technologies (LCT)• Active Matrix Displays (AMD)• FPD Manufacturing, Materials
and Components (FMC)• Plasma Displays (PDP)• EL Displays and Phosphors (PH)• Field Emission Display and CRT (FED)• OLED Displays and Related Technologies (OLED)• 3D/Hyper-Realistic Displays and Systems (3D)
• Applied Vision and Human Factors (VHF)• Projection and Large-Area Displays
and Their Components (PRJ)• Electronic Paper (EP)• MEMS and Emerging Technologies
for Future Displays and Devices (MEET)• Display Electronic Systems (DES)• Flexible Displays (FLX)• Touch Panels and Input Technologies (INP)

th

20

IDW

sa
ver ryanni