IDW ’09
THE 16TH INTERNATIONALDISPLAY WORKSHOPS

Workshops on• LC Science and Technologies (LCT)• Active Matrix Displays (AMD)• FPD Manufacturing, Materials
and Components (FMC)• Plasma Displays (PDP)• EL Displays and Phosphors (PH)• Field Emission Display and CRT (FED)• Organic LED Displays (OLED)• 3D/Hyper-Realistic Displays and Systems (3D)
• Applied Vision and Human Factors (VHF)• Projection and Large-Area Displays,
and Their Components (LAD)• Electronic Paper (EP)• MEMS for Future Displays
and Related Electron Devices (MEMS)• Display Electronic Systems (DES)

Topical Sessions on• Flexible Displays (FLX)• Input Technologies (INP)•

Final Program
World Convention Center Summit
Miyazaki, Japan
December 9(Wed) – 11(Fri), 2009

CONTENTS
Program Highlights............................................................................... 5
General Information.............................................................................. 9
Hotel and Travel Information............................................................... 12
Plenary Sessions
Wednesday, December 9
IDW ’09 Opening ............................................................................... 18
IDW ’09 Keynote Addresses.............................................................. 18
IDW ’09 Invited Addresses ................................................................ 19
Workshop on LC Science and Technologies
Wednesday, December 9
LCTp1 Poster : Novel Materials........................................................ 20
LCTp2 Poster : Novel Display Applications ...................................... 21
LCTp3 Poster : Image Sticking and Measurement Method.............. 23
LCTp4 Poster : Display Mode and Analysis ..................................... 24
LCTp5 Poster : High Performance LCDs.......................................... 27
LCTp6 Poster : Polymer Stabilized LCDs......................................... 28
LCTp7 Poster : Novel LCD Modes ................................................... 29
LCTp8 Poster : LC Alignment........................................................... 31
LCT1 High Performance LCDs (1) .................................................. 34
Thursday, December 10
LCT2 Advanced Blue Phase LC Technology................................... 36
LCT3 Emerging LC Materials .......................................................... 37
LCT4 New Functional LC Devices................................................... 38
LCT5 High Performance LCDs (2) .................................................. 40
Friday, December 11
LCT6 Measurement Method and Characterization ......................... 41
LCT7 New Alignment Technology ................................................... 42
LCT8 Advanced Non-Contact Alignment Technology ..................... 44
Workshop on Active Matrix Displays
Wednesday, December 9
AMD1 System on Panel ................................................................... 45
AMD2 Si Device Technologies.......................................................... 46
OLED3/AMD3 AM-OLED (1) ............................................................ 47
Thursday, December 10
AMD4/OLED4 AM-OLED (2) ............................................................ 49
AMD5 Sensing Devices.................................................................... 50
AMD6 Organic TFT .......................................................................... 51
Friday, December 11
AMDp Poster : Active-Matrix Devices............................................... 52
AMD7 Oxide TFT (1) ........................................................................ 63
AMD8 Oxide TFT (2) ........................................................................ 64

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Workshop on FPD Manufacturing, Materials and Components
Wednesday, December 9
FMC1 Manufacturing Technologies I................................................ 66
FMC2 Manufacturing Technologies II............................................... 67
FMC3 Environmental Friendly Technologies .................................... 69
Thursday, December 10
FMCp Poster : FPD Manufacturing, Materials & Components ......... 70
FMC4 Materials I .............................................................................. 79
FMC5 Materials II ............................................................................. 80
Friday, December 11
FMC6 Backlight I .............................................................................. 82
FMC7 Backlight II ............................................................................. 83
FMC8 Optical Films I........................................................................ 84
FMC9 Optical Films II....................................................................... 86
Workshop on Plasma Displays
Thursday, December 10
PDPp Poster : Plasma Displays ....................................................... 88
PDP1 Novel PDPs ........................................................................... 91
Friday, December 11
PDP2 MgO....................................................................................... 93
PDP3 High γ Materials ..................................................................... 94
PDP4 Electron Emission Mechanism .............................................. 96
PDP5 Essentials of PDP Physics .................................................... 97
Workshop on EL Displays and Phosphors
Wednesday, December 9
PHp Poster : Phosphors ................................................................... 98
Thursday, December 10
PH1
Phosphors in General.......................................................... 106
PH2
Phosphors for LEDs 1 ......................................................... 107
PH3
Phosphors for LEDs 2 ......................................................... 108
PH4
Phosphors in EL and PDP................................................... 109
Friday, December 11
FED2/PH5 Phosphors for FEDs..................................................... 110
Workshop on Field Emission Display and CRT
Friday, December 11
Opening............................................................................................ 112
FED1 CNTs & FEDs ...................................................................... 112
FED2/PH5 Phosphors for FEDs..................................................... 113
FED3 Field Emitters (1) ................................................................. 114
FED4 Field Emitters (2) ................................................................. 115
Workshop on Organic LED Displays
Wednesday, December 9
OLED1 OLED Material and Device ................................................ 117
OLED2 OLED Technologies........................................................... 118
OLED3/AMD3 AM-OLED (1).......................................................... 119
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Thursday, December 10
AMD4/OLED4 AM-OLED (2).......................................................... 121
OLED5 OLED Lighting ................................................................... 122
OLEDp Poster : OLED Poster ........................................................ 123
Workshop on 3D/Hyper-Realistic Displays and Systems
Thursday, December 10
3Dp Poster : 3D/Hyper-Realistic Display Systems ......................... 130
Friday, December 11
Opening............................................................................................ 134
3D1
3D Display Image ................................................................ 134
3D2
3D Display & Acquisition ..................................................... 135
3D3
3D Display Performance (1) ................................................ 136
3D4
3D Display Performance (2) ................................................ 138
Workshop on Applied Vision and Human Factors
Wednesday, December 9
VHF1 Moving Image Quality.......................................................... 140
VHF2 Dynamic Range and Gray Scale Expression....................... 141
VHF3 Display Human Factors ....................................................... 143
Thursday, December 10
VHFp Poster : Applied Vision and Human Factors......................... 144
VHF4/DES4 Color (1)..................................................................... 149
VHF5 Color (2)............................................................................... 151
VHF6 Video System and Image Quality ........................................ 152
Workshop on Projection and Large-Area Displays,
and Their Components
Thursday, December 10
LAD1 Digital Cinema and Signage ................................................ 154
LAD2 Pico Projectors .................................................................... 155
LAD3 Laser Projector and Its Components ................................... 156
LAD4 Speckle Reduction Technologies......................................... 157
LAD5 Projection Components ....................................................... 159
Friday, December 11
LADp Poster : Projection ................................................................ 160
Workshop on Electronic Paper
Wednesday, December 9
Opening............................................................................................ 161
EP1
Electrophoretic Displays ...................................................... 161
EP2
Particles Moving Displays.................................................... 162
EP3
LC Type Electronic Paper and Others ................................. 163
Thursday, December 10
EP4Electrowetting and Electrochromic Displays........................ 164
EPp
Poster : Electronic Paper ..................................................... 165
Friday, December 11
EP5
Driving Methods for Electronic Paper .................................. 168

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Workshop on MEMS for Future Displays andRelated Electron Devices
Thursday, December 10
Opening............................................................................................ 170
MEMS1 Emerging Technologies .................................................... 170
MEMS2 Displays and Imaging ....................................................... 171
MEMS3 Fundamental Components Process Technologies 1 ........ 173
MEMS4 Fundamental Components Process Technologies 2 ........ 174
MEMS5 Optical MEMS and Device Technologies.......................... 176
Workshop on Display Electronic Systems
Wednesday, December 9
Opening............................................................................................ 178
DES1 Beyond the Standards ......................................................... 178
DES2 Backlight Control ................................................................. 179
DES3 Advanced Display Systems ................................................. 181
Thursday, December 10
DESp Poster : Display Electronic Systems .................................... 182
VHF4/DES4 Color (1)..................................................................... 186
Topical Session on Flexible Displays
Thursday, December 10
Opening............................................................................................ 188
FLX1 Flexible LC Technology........................................................ 188
FLX2 Flexible Electronic Paper ..................................................... 189
FLX3 Materials & Components for Flexible Displays .................... 190
FLX4 Flexible Active-Matrix Devices ............................................. 192
FLX5 Flexible OLED...................................................................... 193
Topical Session on Input Technologies
Friday, December 11
Opening............................................................................................ 195
INP1 Imaging Devices & Systems ................................................ 195
INP2 Touch Panel (1).................................................................... 196
INP3 Touch Panel (2).................................................................... 198
IDW ’09 Committees ........................................................................ 200
Floor Map ......................................................................................... 208
IDW ’09 Timetable
IDW ’09 Session Navigator

4

PROGRAM HIGHLIGHTS
Scientific and technological advances in research and development on
information displays can be found at the 16th International Display
Workshops (IDW ’09). Features of the IDW ’09 include the integration of
the following thirteen workshops as well as two topical sessions focusing on recent progress of flexible displays and Image Input technologies.
Workshops on• LC Science and Technologies• Active Matrix Displays• FPD Manufacturing, Materials and Components• Plasma Displays• EL Displays and Phosphors• Field Emission Display and CRT• Organic LED Displays• 3D/Hyper-Realistic Displays and Systems• Applied Vision and Human Factors• Projection and Large-Area Displays, and Their Components• Electronic Paper• MEMS for Future Displays and Related Electron Devices• Display Electronic Systems
Topical Sessions on• Flexible Displays• Input Technologies
The three-day conference will feature 564 papers, including 2 keynote
addresses, 2 invited addresses, 99 invited papers, 199 oral presentations, and 262 poster presentations. Following keynote and invitedaddresses focused on “Promising New Technologies and Markets” in the
Wednesday morning, presentations will begin and continue in seven parallel sessions through Friday. Poster sessions and author interviews will
enable participants to discuss topics in detail. IDW ’09 will also present“IDW Best Paper Awards” and “IDW Outstanding Poster Paper Awards”
based on paper originality and technical significance to information displays. Exhibits by universities and display industry-related businesses will
also be featured from Wednesday to Friday in parallel with workshops.
IDW ’09 should be of interest to not only researchers and engineers, butalso managers of companies and institutions in the display community.

Workshop on LC Science and Technologies (LCT)
Recent advances in LC materials and device technologies are presented. The sessions cover from fundamental studies to recent development in LCD technologies. New LC materials & modes including bluephase display, LC alignment processes, display measurement, fastresponse LCDs, high performance LCDs and emerging new applications are discussed.

Workshop on Active Matrix Displays (AMD)
Full of opportunities to stimulate your intellectual curiosity with interesting invited talks and contributed papers, this workshop covers various
applications such as LCD and OLED for TV, flexible displays and novel
applications, etc. It also features TFT technologies including oxidesemiconductor TFT, organic TFT, poly-Si TFT, µc-Si, and so on. Join us
in discussions of the latest progress in active-matrix displays and TFT
technologies.

5Workshop on FPD Manufacturing, Materials and Components(FMC)
The FMC workshop covers the recent developments and achievementsin the field of flat panel displays. The cutting-edge technologies of the
optical films, color filters, LCD backlighting systems, optical components, manufacturing technologies, and measurement systems arehighlighted. Recycling of FPD materials and environmental safety technologies are included as highlighted topics.

Workshop on Plasma Displays (PDP)
This year the PDP workshop provides even larger number of papers
related to protective layers. (It seems that we are creating problems
rather than solving.) New materials of protecting layers having highgamma values are introduced, that may have a possibility of replacing
the existing MgO. One of the techniques introduced at the PDP session
is an “all-in-vacuum process,” with which a SrCaO layer is formed without exposing the layer to ambient air, resulting in higher luminance.
Deeper studies are introduced with regards to exo-electron emission
from MgO. In order to understand completely the functioning of exoelectrons, however, we may need further more years. The PDP workshop will have at least two invited papers; one is on 2m x 3m film displays using plasma tube arrays, and the other is on analysis of driving
4K2K, 103"-diagonal PDPs which have intrinsic stray capacities andinductances. A special note is that the workshop is organizing a session“Essentials of PDP Physics,” in which two 40-minute lectures arearranged, providing extensive discussion periods.

Workshop on EL Displays and Phosphors (PH)This workshop covers the latest R&D achievements in inorganic ELDs,
phosphors for emissive displays and solid-state illumination as well as
LEDs. The workshop consists of invited talks, contributed papers andposter papers. These will present phosphors for LEDs, PDPs, ELDs,
FEDs, CCFLs and computational approaches for phosphors includinginteresting topics such as luminescent mechanism and synthesis techniques for phosphors.

Workshop on Field Emission Display and CRT (FED)
This workshop covers the entire field of CRT and field emission display
technologies. Recent progress in various field emission displays
equipped with carbon nanotube (CNT) field emitter arrays and MIMCathode-Array is presented. Field emission characteristics and various
field emitter materials, such as CNTs, ZnO, transition metal nitride andnanocrystalline silicon, are also discussed.

Workshop on Organic LED Displays (OLED)This workshop includes recent developments in OLED materials,
devices, display systems, OLED lighting and evaluation methods. OLED
technologies based on new full-color patterning methods are reported
on technologies facilitating the use of OLED in mobile and TV applications. Device architecture for highly efficient emissions and novel materials supporting these device technologies are also presented.

Workshop on 3D/Hyper-Realistic Displays and Systems (3D)This workshop focuses on recent progress in 3D, hyper-realistic image
system and related visual sciences. It also covers 3D acquisition, measurement, standardization, holography, high-fidelity color reproduction.
Invited talks in this workshop include topics from the forefront of 3D
imaging technologies and recent research into advanced display systems.

6Workshop on Applied Vision and Human Factors (VHF)
This workshop provides a forum for discussing the latest academic andindustrial R&D in the field of applied vision and human factors associated with display technology. These include methods for improved color
reproduction, contrast enhancement, dynamic performance andassessment and improvement of perceived quality of images. This
workshop constitutes a unique opportunity to interact with worldrenowned experts in the field and discuss the latest advances withthem.

Workshop on Projection and Large-Area Displays, and Their
Components (LAD)
The hottest technologies for projection displays will make this workshop
exciting. Emerging technologies such as pico projectors with LED andlaser light sources will be highlighted. Ongoing progress in the fields ofdigital cinema, digital signage, light sources, light valves, screens andoptical systems will be discussed as well.

Workshop on Electronic Paper (EP)This workshop focuses on current topics in electronic paper including
rewritable paper, paper-like displays and flexible displays. Various novel
technologies in electrophoretic, liquid crystal, electrowetting, electrochromic, liquid powder and toner display systems will be reported on.
Systems, devices, materials, human factors and applications in this field
are expected to be discussed.

Workshop on MEMS for Future Displays and Related Electron
Devices (MEMS)
This workshop is unique in covering all aspects of MEMS, nanotechnologies and emerging technologies concerning future displays, imaging
devices, and emerging electron devices. It seeks to broaden the horizons of display and imaging technologies into cutting-edge technologies. Research areas such as materials, basic physics and fabrication
process are included. Among all the MEMS and display conferences in
the world, this is the only opportunity for MEMS and cutting-edge technology researchers to gather and discuss such devices. Authorities inthis field are invited from top research institutions around the world.
Invited speakers are from Ecole Polytech., MIT, QD Vision (MIT’s venture company), Univ. of Cambridge, Alces Technology, Kyung Hee
Univ., Samsung, Tohoku Univ., Univ. of Hyogo, Univ. of Tokyo, NIMS
and Ritsumeikan Univ. Together with excellent contributed papers, thisworkshop invites participants who wish to open a new field of displays,
imaging devices and emerging devices.

Workshop on Display Electronic Systems (DES)This workshop covers all aspects of display systems in relation to electronics of video data processing, interface technologies, cooperative
operations between display components such as cells and backlights, in
combinations with other input/output devices, applications to the new
arena. In addition, the systems for a wide and high dynamic range ofcolor reproduction, high-fidelity systems for professional use, and exploration of future standards such as post-HDTV are specially focused.

Topical Session on Flexible Displays (FLX)
Recently, there is much attention on flexible display technologies. The
technologies are spread in a wide range of fields from material scienceto practical applications. The hottest sessions cover all aspects of flexible display technologies including electronic paper, flexible flat panel
display, display materials, TFT and substrate technologies, which are
related across LCT, AMD, FMC, OLED and EP workshops.
7Topical Session on Input Technologies (INP)
The new topical session, INP, covers all aspects of input technologies
on materials, devices and systems, in which we include not only
recently attention-catching touch panels but also imaging sensor technologies. INP is expected to open new technology fields by focusing the
combination of input technologies and display technologies. INP sessions are held by the related workshops of DES, AMD, FMC and EP.
This year’s INP will be composed of 3 sessions, including attractive
invited papers such as on the trend of CMOS image sensors and on theretinal sensing devices.

IDW Best Paper Award and IDW Outstanding Poster Paper
Award
IDW will present “IDW Best Paper Award” and “IDW Outstanding Poster
Paper Award”. The awards committee of IDW will select the most outstanding papers from those presented at IDW ’09. The award winners
will be announced on the IDW website and given a plaque after the conference.

Exhibition
The IDW ’09 Exhibition, which will be held from December 9 throughDecember 11, covers materials, components, manufacturing and measuring equipments, software systems and other related products for display devices. Please join-in and enjoy discussions at exhibitors’ booths.
December 9: 12:00 – 18:00
December 10: 10:00 – 18:00
December 11: 10:00 – 14:00

IDW Best Paper Award
This award will go to the most outstanding paper
selected from those presented at IDW ’09.
The 2009 award winners will be announced on the
IDW website: http://www.idw.ne.jp/award.html

IDW Outstanding
Poster Paper Award
This award will go to the most outstanding paper
selected from those presented at IDW ’09 poster
presentation.
The 2009 award winners will be announced on the
IDW website: http://www.idw.ne.jp/award.html
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GENERAL INFORMATIONSPONSORSHIP
IDW ’09 is sponsored by the Institute of Image Information and Television Engineers (ITE) and the Society for Information Display (SID).

CONFERENCE SITE
World Convention Center Summit
Hamayama, Yamazaki-cho, Miyazaki, Miyazaki 880-8545, Japan

ON-SITE SECRETARIAT
Telephone and fax machines for IDW ’09 use will be temporarily set up
in the secretariat room (ORCHARD Room, 2F) at the World Convention
Center Summit (December 8-11).
Phone/Fax: +81-985-21-1105

BANQUETA buffet-style banquet will be held on December 9 from 19:30 to 21:30
in the TENZUI Room (4F). As the number of tickets is limited, you are
urged to make an advance reservation through the website.

EVENING GET-TOGETHER WITH WINE
A get-together will be held on December 8 from 18:00 to 20:00 in the
FOUNTAIN Room (2F). Wine (Sponsored by Merck Ltd., Japan) will beserved to participants with a relaxed atmosphere for informal discussion.

REGISTRATION
Registration is available in advance and also on-site. However, on-site
registrants may not be able to obtain books or a memory, if there is an
unexpectedly large number of on-site registrations. Advance registrationis strongly recommended.

Registration Fees
The registration fee for IDW ’09 includes admission to the conference
and CD-ROM of the proceedings. The proceedings may also be purchased in book format, on a USB flash drive or SD card, if you have registered and paid by November 6 (Japan Standard Time). Details areshown in the pullout.
Paid by Nov. 6
After Nov. 6
Individual Member¥ 30,000¥ 40,000(ITE/SID/ASO*)
Non-Member**¥ 40,000¥ 50,000
Student***¥ 8,000¥ 10,000
Life Member of ITE/SID¥ 8,000¥ 10,000Banquet¥ 7,000¥ 10,000*ASO: Academic Supporting Organizations(See p. 11 as well as “Supporting Organizations and Sponsors” at theend of each workshop section.)** Non-Member: If you intend to join either ITE or SID, the membershipfee will be subsidized by IDW ’09 committee.
See http://www.idw.ne.jp/ for more information.
***Student ID is required.
Please note that the reduced registration fee must be paid by November
6. The full fee will be charged for payments made later than November
6. Also note that the number of banquet tickets to register on site is limited.

9For additional sets of the proceedings (book and CD-ROM)
At the conference site
¥ 8,000
Airmail after the conference¥ 15,000
Domestic mail after the conference¥ 10,000*Additional sets of Book and CD-ROM can be selected only by those
applying with payment by November 6.

Payment
Three ways are provided for registration.

(1) e-Registration
Access the following URL.
http://www.idw.ne.jp/regist.html
e-Registration will be accepted until November 27, 2009.

(2) Mail or Fax Registration
Complete the registration form (download from the website) and send it
to the secretariat together with all necessary payments no later thanNovember 27, 2009.
IDW ’09 Secretariat
c/o Bilingual Group Ltd.
3-3-6 Kudan Minami, Chiyoda-ku Tokyo 102-0074, Japan
Phone: +81-3-3263-1345 Fax: +81-3-3263-1264
E-mail: idw@bilingualgroup.co.jp
The registration fee should be remitted by one of the following methods.
1. Credit Card (VISA or MasterCard)
2. Bank Transfer to:
Bank:
Bank of Tokyo-Mitsubishi UFJ(Swift Code: BOTKJPJT)
Branch:Ichigaya Branch (Branch No. 14)
Account No.: 1474095 (Ordinary Account)
Account:
IDW
Please attach a copy of the bank receipt with the registration
form to avoid any confusion.
All above payments should be made in JAPANESE YEN.
Also, please note that personal and traveler’s checks are not accepted.

(3) On-site Registration
Conference registration desk will be open:
December 8 (Tue.)
17:00 – 20:00
December 9 (Wed.)
8:00 – 18:00
December 10 (Thu.)
8:00 – 18:00
December 11 (Fri.)
8:00 – 13:00
The on-site registration fee will be payable by:
1. Cash (JAPANESE YEN only)
2. Credit Card (VISA or MasterCard only)
Bank transfer, bank check, or personal/traveler’s checks are notaccepted. Payment by cash is recommended.

Cancellation Policy
Refunds for registration, banquet, additional sets of proceedings etc.
will be made upon receipt by IDW ’09 secretariat of written cancellation
by November 6. For cancellations received after November 6 or noshows, refunds will not be made. However, after IDW ’09 closes, a set ofthe proceedings will be sent to the registrants who have paid the registration fees. If it becomes difficult to hold IDW ’09 due to infectious disease and other unavoidable factors, we will substitute the IDW with themail delivery of the ’09 proceedings at a later date to all those who haveregistered for participation.
10

INQUIRIESIDW ’09 Secretariat
c/o Bilingual Group Ltd.
3-3-6 Kudan Minami, Chiyoda-ku Tokyo 102-0074, Japan
Phone: +81-3-3263-1345 Fax: +81-3-3263-1264
E-mail: idw@bilingualgroup.co.jp

ACADEMIC SUPPORTING ORGANIZATIONSThe Chemical Society of JapanThe Electrochemical Society of Japan (ECSJ)The Illuminating Engineering Institute of JapanThe Imaging Society of JapanThe Institute of Electrical Engineers of JapanThe Institute of Electronics, Information and Communication Engineers(IEICE)The Institute of Image Electronics Engineers of Japan
Japan Ergonomics Society (JES)The Japanese Liquid Crystal Society (JLCS)The Japan Society of Applied Physics
The Virtual Reality Society of JapanThe Society of Polymer Science, Japan

FUNDS
Funds for the conference are furnished in part by the following organizations:• Grant-in-Aid for Scientific Research (KAKENHI: 2062005) from MEXT
• Miyazaki Visitors and Convention Bureau (Miyazaki Prefectural Government)• National Institute of Information and Communications Technology
International Exchange Program• The Asahi Glass Foundation• The Telecommunications Advancement Foundation

Please keep an eye on the website (http://www.idw.ne.jp/)
for latest information.

SID 2010
International Symposium, Seminar and Exhibition
May 23–28, 2010
Seattle, Washington, USA
11

HOTEL AND TRAVEL INFORMATIONACCOMMODATIONSJTB Corp. (JTB) will handle arrangements for your hotel reservations.
Hotel reservations can be made at the IDW official website.
http://www.idw.ne.jp/accommodation.html
JTB Tokyo Metropolitan Corp.
Corporate Sales Office Yokohama
Yokohama Convention Center
Phone: +81-45-316-4602
Fax: +81-45-316-5701
Office Hours: 9:30-17:30 (Weekdays only)
E-mail: jtb_convention@jtb.jp
There will be an on-site travel information desk during the conference
period to handle arrangements for transportations.

VISAS
Visitors from countries whose citizens must have visas should apply toa Japanese consular office or diplomatic mission in their respective
country. For further details, please contact your travel agency or the
local consular office in your country.
Attention: For some countries’ citizens, official documents prepared by
the secretariat will be needed. Please ask the secretariat at least twomonths before the conference.

JAPAN RAIL PASS AND JR KYUSHU RAIL PASS
Japan Rail (JR) provides the following economical passes for someoverseas travelers. Because purchase in Japan and usage conditions
are restricted, please contact your travel agency prior to your trip.
(1) The JAPAN RAIL PASS is the most economical way to travel
throughout Japan by rail and JR buses.
(2) The JR KYUSHU RAIL PASS is an economical and flexible railpass to travel throughout Kyushu island.
Japan Rail Pass: http://www.japanrailpass.net/
JR Kyushu Rail Pass: http://www.jrkyushu.co.jp/english/kyushu_railpass.html

CLIMATE
The average temperature in Miyazaki during the period is around 11°C,
with temperatures of 15°C in the daytime and 6°C at night on average.

IDW ’10The 17th International Display Workshops
December 1-3, 2010
Fukuoka International Congress Center
Fukuoka, Japan
http://www.idw.ne.jp/12MIYAZAKI CITY
Miyazaki city is located in the South Eastern corner of the island of
Kyushu (the Southernmost of the four main islands of Japan). The
city has a total area of approximately 596 square kilometers, and a
population of 368,735 people. In the center of a city, the vast stretchof the Miyazaki Plain is formed by the eastward-flowing Oyodo River,which flows into the sea of Hyuga from the Kyushu mountain range.
The eastern coastline has a series of white sand and green pinezones, and the twisting coastline lies against the backdrop of overhanging mountains and Aoshima Island. The city has a year-roundwarm climate with a relaxed tropical environment due to the influence of warm currents from the Pacific Ocean. Miyazaki plays aprominent role in Japanese mythology, as it is believed to be thehome of the Gods who created Japan. There are many traditional
places of Hyuga mythology in the city such as the Miyazaki Shrine,
Aoshima Shrine, Eda Shrine and Misogi Pond.
In Miyazaki city, many shops offer a variety of regional specialties
from Miyazaki Prefecture. Jidori-momoyaki is a delicious char-grilled
chicken using only all-natural Miyazaki chickens. Lettuce-maki issushi rolls of Miyazaki origin, which are made by rolling together
shrimp, lettuce and mayonnaise in rice and seaweed. Shochu is avery popular alcoholic drink made from sweet potato, buckwheat,
wheat or corn. There are many fresh and sweet fruits, such as Hyuganatu Orange, Mango and Kinkan Orange. In the downtown area,
the main transportation facilities are buses and taxis. The major bus
routes start from the JR Miyazaki station or the Miyakoh City bus
center, which is located near the JR Minami-Miyazaki station.

PLACES OF INTEREST
The Nichinan Coastline
From ancient times the Nichinan Coastline was known for its longsweep of scenic coastlines, which are famed as a most popular destination for honeymooners. As you drive along this breathtaking
coastal road with the blue sky and horizon stretching out before you,you’ll realize you really are in a tropical paradise. Take some time tostop and smell the flowers at the Horikiri Pass, and view the “Devil’s
Washboard” rocks of Aoshima Island. Aoshima Island is a small
island with a circumference of only 1.5 km. It is surrounded by a rockformation, created by the crashing waves, known as the “Devil’s
Washboard”. There is also a shrine on the Island that attracts tourists from home and abroad.
Phoenix Seagaia Resort
Phoenix Seagaia Resort is Japan’s first large-scale international
resort facilities on the Hitotsuba Coast. The land area consists ofmore than 700 hectares, complete with meeting space for up to
5000 persons, 4 comfortable resort hotels, a golf course, tennis
court and even a natural hot spring. In the very center of the international Phoenix Seagaia Resort, a 154-meter tower skyscraper hotel
dominates the landscape (Sheraton Grande Ocean Resort). You
can enjoy a magnificent view of the Pacific Ocean from all rooms.
Miyazaki Pref. Museum
Miyazaki Pref. Museum was established in 1951. This is a place
where you can experience the history and beauty of Miyazaki. In the
grounds, a replica of an ordinary 19th Century style house has been
constructed.

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Aya Town
Aya Town is bordered on the west by Miyazaki city, 20 km away fromthe city center. This green mountain town has Japan’s largest evergreen forest, which consists of evergreen trees such as oaks andcamellias. Shoyo-Otsuribashi, which crosses an evergreen-gulch isone of the longest suspension bridges in Japan, 142-meter high and
250-meter long. Shusen-no-Mori is a theme park based on traditional craft and brewing; you can try your hand at traditional Japanese industrial arts, and sample shochu, wine, and local beer.
MIYAZAKI INFORMATION
For more information please refer to the following web sites.
Miyazaki Prefecture:
http://www.kanko-miyazaki.jp/Language/english/
Phoenix Seagaia Resort:
http://www.seagaia.co.jp/english/guidance/

EVENING GET-TOGETHERWITH WINE
Tuesday, December 8, 2009
18:00–20:00
Room “FOUNTAIN” (2F)World Convention Center Summit(Sponsored by Merck Ltd., Japan)
See page 9 for details

BANQUET
Wednesday, December 9, 2009
19:30–21:30
Room “TENZUI” (4F)
World Convention Center Summit
See page 9 for details
14

Access to Conference Site
Kansai Int'l Airport(KIX)

Narita Int'l Airport
(NRT)

Bus
¥ 1,900 / 75 min.

Bus
¥ 3,000 / 75 min.

Haneda Int'l Airport(HND)

Osaka Int'l Airport
Itami (ITM)
Flight 65 min.
10 flights / day

Flight 90 min.
16 flights / day

Fukuoka Airport (FUK)
Int'l Flights: Seoul, Shanghai,
Taipei, Dalian, Hongkong,Beijing, Busan etc.

Central Japan Int'l
Airport Centrair (NGO)Many Int'l Flights from
Asia, Europe, America etc.

Flight 40 min.
7 flights / day

Flight 75 min.
3 flights / dayMiyazaki Airport (KMI)
Int'l Flight: SeoulBus¥ 430 / 26 min.

Bus
¥ 830 / 32 min.

JR Line¥ 340 / 10 min.

Taxi
¥ 4,500/ 20 min.

Shuttle bus*

JR Miyazaki Station
Taxi¥ 2,500
15 min.

Bus¥ 500 / 25 min.

Cottage
HimukaLuxze
Hitotsuba

Sheraton Grande Ocean Resort

World Convention Center Summit,
Phoenix Seagaia Resort*Schedule will be announced on http://www.idw.ne.jp/ in November.
Information of this page may be changed. Please confirm the details in eachcompany.

(as of October 31, 2009)15

Conference Site

sort

Miyazaki Phoenix Zoo

N

eaga
nix S

Phoenix Golf Academy
JR Hasuga-ike
StationPhoe

Sun Hotel Phoenix

ia Re

Phoenix Country Club

Sheraton Grande
Ocean Resort
Florante
MiyazakiConference Site

gaia

Local Bus
No.18

ЊS
ea

World Convention
Center Summit

zaki SFree Shuttle
Bus in Seagaia

tationMiyazaki Prefectural Museumof Nature and History

l Bus

Miya

JR Miyazaki
Jinguu-mae
StationLoca

Miyazaki
ShrineSeagaia Tennis Club

Cottage Himuka/
Luxze Hitotsuba

Local Bus
No.16

Miyazaki Downtown
AEON Shopping
Center
JR Miyazaki Station

JR Minami-Miyazaki Station

Miyakoh City
(Bus Terminal)

JR Tayoshi Station

Miyazaki Airport

1 km
JR Miyazaki Airport Station

16

Miyazaki Downtown
N

Tachibana-dori
4-choume

Depato-mae

Tachibana-dori
3-choume

Local Bus
No. 16
to Seagaia

Local Bus
No. 18to Seagaia

Nishikicho‫ޥ‬Yubinkyokumae

Takachiho-dori
2-choume

Tachibana-dori
1-choume

JR LineTachibana-dori
2-choume

Miyazaki
StationMiyazakiPrefectural
Government

Airportφ‫ޥ‬

Buses from Miyazaki Airport
To Conference Site
Local Bus: Gate-4

Buses from Miyazaki Downtown (Tachibana-dori)
To Conference Site
No. 16 , No. 18

To Miyazaki Airport

Buses from Conference Site
To Miyazaki Downtown

To Miyazaki Airport

No. 16 , No. 18
Chartered buses between the Airport and the Conference Site will bemade available by the IDW Committee.

Hotel List (Phone Number)--- Phoenix Seagaia Resort --Sheraton Grande Ocean Resort (+81-985-21-1133)
Sun Hotel Phoenix (+81-985-21-1313)
Cottage Himuka (+81-985-21-1333)
Luxze Hitotsuba (+81-985-21-1333)
There are free shuttle buses running in the Seagaia Resort.
--- Miyazaki Downtown --There are several hotels along Tachibana-dori street, but the hotels in
Seagaia Resort are strongly recommended because of easy accessto the conference site.
17

Wednesday

December 9

Plenary Sessions“Promising New Technologies and Markets”
Wednesday, December 99:30 - 9:40

TENZUI

Opening
Master of Ceremony: K. Betsui, Executive Chair, Hitachi, Japan
Opening Remarks
9:30
Y. Yamamoto, General Chair, Sharp, JapanM. Omodani, Program Chair, Tokai Univ., Japan
9:40 - 11:00

TENZUI

Keynote Addresses
Chair:
Co-Chair:M. Omodani, Program Chair, Tokai Univ., JapanY. Yamamoto, General Chair, Sharp, Japan

Keynote Address - 1
9:40

Paradigm Shift in Books and Newspapers
by Electronic MediaS. Furukawa
Keio Univ., JapanAn era of electronic books is expected to begin shortly. The
popularization of electronic books has begun already after Amazon
started marketing their e-book “Kindle” in 2007. Electronic books could
become a major media for reading books, magazines, comics,
newspapers and all kinds of printed material, which have been
dominated by Gutenberg’s press printing technologies. This paradigm
shift cannot be avoided, especially in the field of books andnewspapers.
Keynote Address - 2
10:20

Towards 3D Display and Multisensory
Interfaces Based on Human Perceptual andCognitive Mechanisms

H. Ando
NICT, Japan
The paper discusses multi-view 3D displays and multisensory interfaces
which can be more natural and realistic to humans. Our investigation onhuman perceptual and cognitive mechanisms using psychophysical andbrain activity imaging methods is also described to explore morehuman-oriented information and communication technologies in the
future.

18

Wednesday

December 9

11:10 - 12:10

TENZUI

Invited Addresses
Chair:
Co-Chair:R. Hattori, Program Vice-Chair, Kyushu Univ., Japan
H. Mori, Program Vice-Chair, FUJIFILM, Japan
Trends and Future of e-Paper Technologies
Plenary

Invited Address - 1
11:10
J. M. Kim

Samsung Elect., Korea
Today’s in this world of highly informative society, the custormer
requirements for display device is ever more demanding. Recently
introduced e-paper technology, getting momentum on the step towards
commercializations have to meet such demands in many aspects. In
this talk, we will address challenging issues at hand and suggest someof the most proper solutions.
Invited Address - 2
11:40

Intelligent Display Systems for Future
Automobiles

S. Kurikawa
Denso, Japan
Following electronic application on automobile, information given todriver is increasing and also to wider range. In order to improve safety,
assurance, comfort and convenience, it is important to develop invehicle display system that will not just display the information but will
convey in easy to understand manner.
----- Lunch -----

19

Wednesday

December 9

Workshop on
LC Science and Technologies
Wednesday, December 9
13:20 - 16:20

3F Foyer

Poster LCTp1: Novel Materials
LCTp1 - 1

Abnormal Molecular Orientation of Chemically
Linked Rod - Disc Mesogenic LC under Vertical
Electric Field
J. H. Jung, S.-K. Park, M. Chae, I. Y. Cho, M. S. Kim,
E. J. Jeon, D. W. Kwon, K.-U. Jeong, S. H. Lee
Chonbuk Nat. Univ., Korea

Molecular orientation of a rod-disc liquid crystal (LC) molecule (RD12)
was investigated under the vertical AC fields. Upon varying electricfields from 0 V to a certain voltage, it was found that RD12 was oriented
with two-steps. Rod mesogen having a higher dipole interaction firstaligned parallel to an electric field. After the frustration and stabilizationof rod mesogens, disc mesogens oriented parallel to an electric field.
LCTp1 - 2

The Effect of Aligned LC in the Electrolyte for
Efficiency Improvement on Dye-Sensitized Solar Cell
H. Kim, S.-H. Jin*, G.-D. Lee
Dong-A Univ., Korea*Pusan Nat. Univ., Korea

We report a new strategy for efficiency improvement of electron transfer
which is used aligned the liquid crystal by applying voltage in polymer
electrolyte on a quasi solid-state dye-sensitized solar cell.
LCTp1 - 3

Bistable Cholesteric LCD with Self-Assembled NanoParticles
Y. Hung, C. Huang, S. Jeng*, S. Hwang
Nat. United Univ., Taiwan*
Nat. Chiao Tung Univ., Taiwan

A novel broadband bistable cholesteric liquid crystal display isdemonstrated by doping polyhedral oligomeric silsesquioxane (POSS).
The multi-domain planar CLC structure, which presents the white
appearance in the planar state, can be easily achieved.

20Wednesday
LCTp1 - 4

December 9Effect of CNTs on the Electro-Optical Properties of
the VA LC Cells
C.-Y. Huang, P.-Y. Chiou, Y.-J. Huang
Nat. Changhua Univ. of Education, Taiwan

We investigate electro-optical properties of the CNT-doped VA LC cells.
When the CNT concentration is low, the LCs and CNTs form a guest
host system; When the CNT concentration is high, the CNTs become
entangled networks, impeding the LC flow. The CNTs markedly
decrease the response time of the cell.
LCTp1 - 5L

Analysis on Solubility of Functionalized Carbon
Nanotubes in LC Using the Flory-Huggins Theory

LCT

Y. J. Huang, Y. G. Fuh
Nat. Cheng Kung Univ., Taiwan
An analytic study on dissolution between 5CB liquid crystal and Maleic
anhydride grafted single walled carbon nanotube using the FloryHuggins model is presented. At room temperature, this functionalized
carbon nanotube can spontaneously dissolve in 5CB when the grafting
ratio of the MA groups reaches up to 20 atomic wt%.
LCTp1 - 6L

Improvement of Dynamic Response Time Using
Pentacene Doped Negative Anisotropy Nematic LC in
Vertical Alignment Cell
H. K. Shin, J.-H. Seo, T.-H. Yoon, J. C. Kim
Pusan Nat. Univ., Korea

We propose a vertical alignment cell with a pentacene doped negative
anisotropy nematic liquid crystal. The device shows a lower operating
voltage and faster response time compared to a vertical alignment cellwithout pentacene. Fast response time is because pentacene lowers
the dielectric response, which in turn reduces the rotational viscosity.
13:20 - 16:20

3F Foyer

Poster LCTp2: Novel Display Applications
LCTp2 - 1

Enhancement of the Switching Speed of a Refractive
Microlens Array Based on Nematic LCs
Y. W. Kim, S. H. Lee, J. Jeong, J.-H. Kim, C.-J. Yu
Hanyang Univ., Korea

We demonstrate a nematic liquid crystal (NLC) microlens array with anenhanced switching speed. In the refractive NLC microlens withpolarization-insensitivity, the switching speed was improved bypolymerization of reactive mesogen mixed with alignment layer.

21

Wednesday
LCTp2 - 2

December 9
Optimization of LC Display for Optical Addressing of
the ORW E-Paper
A. Murauski, Q. Yu, T. Du, L. Yao, V. Chigrinov,
H. S. Kwok
Hong Kong Univ. of S&T, Hong Kong

For optical addressing ORW e-paper key role plays quality ofpolarization of input light. The best device for changing polarization
direction is LC display without output polarizer. Different types of LC
displays are tested for this purpose. Possible applications andnecessary modifications for existing LCD are also discussed.
LCTp2 - 3

Wavelength-Selective Reflection of Cholesteric LCs
Depending on Temperature and Dopant
Concentration
K.-S. Bae, Y.-J. Jang, C.-J. Yu, J.-H. Kim
Hanyang Univ., Korea

We report temperature-dependent color variation in cholesteric liquid
crystals with different concentrations of chiral dopant. The reflectedcolor, corresponding to the chiral pitch, is governed by not onlymolecular thermodynamics but also temperature-dependent solubility ofchiral dopant.
LCTp2 - 4

New Preparation Method of Coatable Polarizer
Utilizing Photocurable Organic-Based Lyotropic
Chromonic LC Solution
Y.-J. Bae, K.-U. Jeong, S.-H. Shin*, M.-H. Lee
Univ. of Chonbuk Nat., Korea*Korea Inst. of Ind. Tech., Korea

We report a new fabrication method of coatable polarizer by using
lyotropic chromonic liquid crystals dissolved in photocurable ionicmonomer solution. The lyotropic solution was shear-coated on asubstrate, and UV-cured to obtain a thin film polarizer. The new method
provided various advantages which will be covered in the presentation.

22

Wednesday

December 9

13:20 - 16:20

3F Foyer

Poster LCTp3: Image Sticking and Measurement
MethodLCTp3 - 1

A Measurement of Image Sticking in LCDs
Y. M. Chu, H.-H. Sung, L. M. Chen, T. Miyairi*, T. Mori*,
Y. C. Lan
Chisso Panel Tech., Taiwan*Chisso, Japan

LCTp3 - 2

Line Image Sticking Analysis on a-Si TFT-LCD by
Changing the Rubbing Directions and DC Bias
P. Zhang, H. Zhao, J. You, L. Huangfu, J. Lee
BOE OptoElect. Tech., China

We made a study on the line image sticking of a-Si TFT LCD in thispaper. It was resulted that the location of line image sticking was related
to the rubbing directions and DC bias polarity.
LCTp3 - 3

Photo-Leakage Current Impact on Image Sticking
H. Zhao, J. You, J.-I. Ryu, L. Huangfu, J. Lee
BOE OptoElect. Tech., China

Photo-leakage current impact on image sticking was discussed in thispaper. Photo-leakage current difference between black and whiteblocks played a more important role on image sticking compared withresidual DC voltage in our study.
LCTp3 - 4

A Novel Method to Determine the Optical Parametersof a Twisted Nematic LC Cell and a EWV Film
R.-B. Li, K.-H. Yang*, W.-C. Chen
HannStar Display, Taiwan
Nat. Chiao Tung Univ., Taiwan*

We have developed a novel method to determine optical parameters ofa TN-LCD cell by iterative fittings between theoretical retardation values
and experimental data. We also use similar procedures to analyze the
EWV film. The derived optical parameters are essential for panel
designers to obtain optical simulations of better accuracy.

23

LCT

This paper presented a quantitative method for image sticking (IS)evaluation, which is free of backlight luminance variance factor, anddemonstrates slight IS variance caused by process variation can bedetected and distinguished by our developed image sticking system.

Wednesday
LCTp3 - 5

December 9
Refractive Index Measurement Method for LC
Materials in MMW Region by Using CPW Substrate
T. Nose, E. Birukawa, Y. Sato, R. Ito, M. Honma
Akita Pref. Univ., Japan

Novel measurement method of refractive indices of LC materials in
millimeter-wave (MMW) region is proposed to reduce the quantity oftest sample extremely by using CPW which is known as an excellent
planar type waveguide.
LCTp3 - 6

Precise Measurement of the LC Parameters
Considering the Multiple Interferences in the LC Cellfor the Quantitative Evaluation of LC Devices
T. Ishinabe, Y. Ohno, T. Miyashita, T. Uchida
Tohoku Univ., Japan

A simple and highly accurate measurement method was devised for therefractive indices, alignment distribution and surface polar anchoring
strength by considering the multiple interferences in the LC cell. The
accurate measurement based on the new interference-included 2 × 2
matrix method resulted in the establishment of quantitative evaluation of
LC devices.
LCTp3 - 7

High Precision Measurement Method for Threshold
Voltage, Elastic and Dielectric Constants Ratio of LC
Materials
Y. Chiba, Y. Ohno, T. Ishinabe, T. Miyashita, T. Uchida
Tohoku Univ., Japan

We have devised a high-precision method of measuring the thresholdvoltage and the elastic and dielectric constants ratios of liquid-crystal
materials. We obtained these parameters from measuring the alignment
distribution in the on state. We confirmed the validly of this method
through measurements of several LC cells with different gaps.
13:20 - 16:20

3F Foyer

Poster LCTp4: Display Mode and Analysis
LCTp4 - 1

Study on the Homeotropic-Planar Transition ofCholesteric LCs
C. Nakcho, L. Heekeun, J. Taesung, F. Takeshita,
L. Soonkwon, S. Sungtae
Samsung Elect., Korea

We investigate the transition time of cholesteric liquid crystals during
applying or removing voltage by simulating 2DIMOS. We could find that
Polar anchoring energy of the surface affect on the Homeotropic-Planar
Transition time.

24

Wednesday
LCTp4 - 2

December 9
Analysis on Transient Response Times of Bend
Aligned Nematic LC Cell
H. Shidara, T. Kobayashi, T. Takahashi, S. Saito
Kogakuin Univ., Japan

In this paper, theoretical expression for transient response times of abend aligned nematic liquid crystal cell are derived taking account of
the bias voltage, the pre-tilt angle, the flow effect and polymer
stabilization coefficient as well as the applied voltage.
LCTp4 - 3

Analysis of Polymerization of Monomer Suspended
in LCD
R. Kamoto

LCT

Micro Analysis Lab., Japan
It has tried to analyze the monomer suspended in LCD cell dividing
cross sectional direction, bulk liquid crystal (LC) layer and interface LC/
PI film layer, and investigated the polymerization of monomer, theresidual monomer component. The monomer suspended in LC is muchcondensed at the interface between LC/PI alignment film existing a little
in bulk layer before UV curing.
LCTp4 - 4

Withdrawn

LCTp4 - 5L

Reverse Mode Polymer Dispersed LCs with Twisted
Orientation
R. Yamaguchi, L. Xiong
Akita Univ., JapanWe employ twisted orientations in reverse mode polymer dispersed
liquid crystal films which consist of a nematic LC with a positive
dielectric constant and a UV curable LC. A contrast ratio under an
unpolarized incident light is improved and the transparent off-state ishaze free for all viewing angles.
LCTp4 - 6L

Selective Switching of Bistable Chiral Splay Nematic
LCD by Distorted Electric Fields
C. G. Jhun, K. Kim, U.-S. Jung, J.-H. Moon, S.-B. Kwon,
J. H. Lee*, J. C. Kim*
Hoseo Univ., Korea*Pusan Nat. Univ., Korea

Switching properties of liquid crystal displays (LCDs) is strongly
coupled with the dielectric interaction. In this paper, we demonstrate theselective transition of the bistable chiral splay nematic LCD by distorted
electric fields. The selective switching occurs during the twist-to-splaytransition process under combinations of vertical and horizontal electricfields.

25

Wednesday
LCTp4 - 7L

December 9
Optimization of the Electrode Structure for Improving
Transmittance in FFS Mode TFT-LCD
J.-J. Huang, H.-P. Chiu, H.-T. Wu, H.-M. Hu, S.-F. Chen
ChungHwa Picture Tubes, Taiwan

The FFS mode was known as wide viewing angle and less color shift,
but the drawback was less transmittance than TN mode. In this paper,
we present an optimized design of the pixel electrode structure in FFS
Mode. The novel structure with high transmittance and excellent opticalcharacteristics was proposed.
LCTp4 - 8L

Bend-Mode LCDs Stabilized by Patterned
Microstructure Using Microcontact Printing
H. Kikuchi, T. Mitsumatsu*, H. Sato**, K. Takizawa*,
H. Fujikake**
NICT, Japan*Seikei Univ., Japan**
NHK, Japan

We have investigated two types of novel pi-cell using patterned
microstructure of high-pretilt domain fabricated by microcontact printing
method. The pi-cell with hybrid-alignment-nematic domain or verticalalignment domain has excellent characteristics, such as improvement in
the speed of initial transition and stable bend orientation after initialtransition.
LCTp4 - 9L

A Ferroelectric LCD with Low Operation Voltage in a
Pixel-Confined Geometry
J.-H. Na, C. Keum, Y.-J. Na, S.-D. Lee
Seoul Nat. Univ., Korea

We report on a low driving voltage VA-DHFLC display by using microconfinement channels structure. Particularly, the alignment of FLCs isextremely stable in the confinement structure, so that the excellent
electro-optic performance was obtained in the regime of high electricfield.
LCTp4 - 10L

Light Leakage Analysis for High Picture Quality FFS
LCD-TVs
X. Xu, H.-J. Park, Y. Song, W. Li, T.-Y. Eom, L. Huangfu,
J.-Y. Lee
Beijing BOE OptoElect. Tech., China

We investigated the light leakage in terms of materials and process withFFS LCD-TVs. We found light leakage is caused by scattering of L/C, C/F mainly and also depolarization by process of film and rubbing. The
oblique light leakage can be much more improved by using newcompensation film.

26

Wednesday

December 9

13:20 - 16:20

3F Foyer

Poster LCTp5: High Performance LCDs
LCTp5 - 1

High Optical Performance with Optimum
Compensated Film on Right-Rotated TN LCDs
Y.-H. Lin, S.-C. F. Jiang, C.-H. Shih, W.-M. Huang
AU Optronics, Taiwan

In the past, rightrotated TN had worse CR than leftrotated when weused popularly compensated film (EWV).In this paper, we utilized
optimum compensation film and modified offstate voltage to reach highCR on rightrotated TN.
Improvement in Viewing Angle Properties of CMVALCDs Using Uniaxial C- and A-Plates
S. Ogumi, M. Kurokawa, Y. Iimura
Tokyo Univ. of A&T, JapanFor improving the viewing angle properties of circular-polarizer-type
MVA-LCD (CMVA-LCDs), the detailed studies of optical compensation
have been done by using negative-type uniaxial Aand C-plates. The
optimum conditions are derived from the theoretical considerations, andthe results are confirmed by the computer simulations and experimental
results. From the study, negative-type uniaxial compensation films areproved to be useful for achieving high-performance CMVA-LCDs withlow power consumption.
LCTp5 - 3

Twisted-Nematic LCDs with Small Grayscale
Inversion and Wide Viewing Angle
C.-H. Lin
Nat. Sun Yat-Sen Univ., Taiwan

This work proposes a twisted-nematic liquid-crystal display (TN-LCD)
with a small grayscale inversion and wide viewing angle. The bisector
effect of the TN-LC is used to improve the grayscale inversion of TNLCDs. A viewing angle of over the entire 80° viewing cone of the
proposed TN-LCD is demonstrated.
LCTp5 - 4

Required Characteristics of Lamp Response Time to
Improve MPRT
J. W. Hong, B. S. Min, H. W. Jeon, D. H. Lee, K. D. Kim,
M. C. Jun, I. J. Chung
LG Display, Korea

The EEFL (External Electrode Fluorescent Lamp) and CCFL (Cold
Cathode Fluorescent Lamp) are the most popular backlight source for a
LCD (Liquid Crystal Display). The image quality of LCD TV, MPRT
(Motion Picture Response Time) could be improved by changing
materials of the phosphor that helps reducing the decay time at the
moment of lamp on/off.
27

LCT

LCTp5 - 2

Wednesday
LCTp5 - 5

December 9
The MPRT Uniformity Improvement by the Block
Division of the Backlight System
B. S. Min, J. W. Hong, H. W. Jeon, D. H. Lee, K. D. Kim,
M. C. Jun, I. J. Chung
LG Display, Korea

The Optimized backlight block divisions can improve the image quality
of LCD TV by the M.P.R.T (Motion Picture Response Time) Uniformity.
LCTp5 - 6

The Relationships between the Performances of
RTN-LCDs and the Properties of LC Materials
K. Takatoh, N. Motoishi, M. Nishitateno, M. Akimoto
Tokyo Univ. of Sci. Yamaguchi, Japan

Reverse TN-LCDs with LC materials of the chirality opposite to twist
direction determined by the rubbing directions show drastically low
driving voltage. It was confirmed that the small K11 and K33 values canstabilize RTN-LCDs and that the small K33 values can also realize thelow driving voltage.
13:20 - 16:20

3F Foyer

Poster LCTp6: Polymer Stabilized LCDs
LCTp6 - 1

Improved Polymer Sustained Alignment Technology
for VA Mode LCD
C.-W. Su, J.-T. Lien, T.-Y. Li, C.-H. Liu
Chunghwa Picture Tubes, Taiwan

We have improved polymer sustained alignment (PSA) technology
without PI process for MVA-LCD which is called polyimide-less (PIless). The PI-less is better than PSA for TFT-LCD manufacture process
because we don’t need fabrication equipment. Finally, the PI-less has
high contrast ratio, high brightness and fast response (less than 20ms).
LCTp6 - 2

A Multistage UV-Curing Method of Polymeric
Monomers to Improve Brightness of Bump-Less VA
LCD
J.-T. Lian, C.-W. Su, H.-C. Hung, T.-Y. Li, C.-I Chiang,
C.-S. Liu, C.-L. Tsou
Chunghwa Picture Tubes, Taiwan

We used a Multistage UV-Curing method to eliminate black patterns on
Bump-Less VA LCD panel displaying white picture. The static contrast
ratio of Bump-Less VA LCD is 4800:1 and higher than normal VA LCD.

28

Wednesday
LCTp6 - 3

December 9Surface Controlled 8-Domain Patterned Vertical
Alignment Mode with Reactive Mesogen
S. I. Jo, Y.-J. Lee, Y.-K. Kim, A.-R. Yoon, C.-J. Yu,
J.-H. Kim
Hanyang Univ., Korea

We propose the 8-domain patterned vertical alignment (PVA) mode with
UV curable reactive mesogen (RM). The RM mixed with alignment layer
alter pretilt angle according to the applied voltage through UV exposureand can generate the 8-domain by differentiating the pretilt angle
spatially in pixel area.
LCTp6 - 4

LCT

EO Characteristics of Polymer Stabilized Vertically
Aligned (PSVA)-FLC Cell Using FLC Materials with/without SmA Phase
T. Narata, T. Murata, S. Saito, T. Takahashi
Kogakuin Univ., Japan

Differences in electro-optical characteristics of PSVA-FLC cells areinvestigated and discussed for cases when using two types of FLC
materials with/without SmA phase, and carrying out the polymer
stabilization under the SmC* phase or SmA phase, and etc.
LCTp6 - 5

The PSLC Light Shutter for Transmissive Flexible
DisplayJ. W. Lee, M. Jamil, A. Farzana, S. W. Park, H. Y. Yoon,
Y. J. Jeon
Konkuk Univ., Korea

We made the fabrication of lined polymer walls using monomer andphoto mask attaching release tape. These walls lead liquid crystal (LC),liquid crystal monomer (LCM) and dichroic dye to align. Upon lifting
photo mask off, ITO glass covers that. Inserting LC, LCM and dichroic
dye by capillary action makes a PSLC.
13:20 - 16:20

3F Foyer

Poster LCTp7: Novel LCD Modes
LCTp7 - 1

Advanced Pixel Electrode Structure for HighContrast Ratio in the IPS Mode
H. S. Cho, S. C. Jeong, J. U. Kwon, D. W. Kang,
B. C. Kim, S. J. Yu
LG Display, Korea

We investigated electro-optical characteristics of the pixel electrodestructure with double layers of MoTi/ITO as well as including that of thesingle layer with ITO or MoTi. It is found that the contrast ratio of the
pixel electrode structure with MoTi/ITO was presented about 11.2%
higher than that of ITO electrode.

29Wednesday
LCTp7 - 2

December 9
Preparation of Black-White Reflective LC Display
with Two Color Reflective Layers
W.-S. Choi
Hoseo Univ., Korea

Black-white reflective liquid crystal display with two color liquid crystal
layers, the combination of yellow color liquid crystal and blue color liquid
crystal, was prepared. The rubbing of cholesteric liquid crystal panel
affects the brightness and color spectrum due to increase the planar
domain texture. The CIE chromaticity coordinate of white is (0.31, 0.31).
LCTp7 - 3

Withdrawn

LCTp7 - 4

Twist Stabilization in Pi-Cell
K. Sawa*,**, K. Suzuki**, M. Akimoto**, Y. Kato**,K. Takatoh**, S. Kobayashi***Keio Univ., Japan**Tokyo Univ. of Sci., Yamaguchi, Japan

We provide a technique to stabilize π-twist state at 0 [V] by adjusting aintermediate pretilt angle and using a liquid crystal material that has an
appropriate balance on elastic constants. The pretilt angle of the state
would be lower than that of the No-bias bend state.
LCTp7 - 5

Electro-Optical Stability in a Flexible LCD with
Adhesive Spacers under Bending Deformation
J.-H. Kang, K.-S. Bae, S.-W. Yi, J.-S. Choi*, J.-H. Kim,
C.-J. Yu
Hanyang Univ., Korea*Hongik University, Korea

We propose a structure of flexible liquid crystal displays fabricated withadhesive patterned spacers acting as spacer and glue. In this proposed
structure, the stable electro-optic performances were obtained under
bending deformation.

IDW Outstanding
Poster Paper Award
This award will go to the most outstanding paper
selected from those presented at IDW ’09 poster
presentation.
The 2009 award winners will be announced on the
IDW website: http://www.idw.ne.jp/award.html
30

Wednesday

December 9

13:20 - 16:20

3F Foyer

Poster LCTp8: LC Alignment
LCTp8 - 1

Fabrication of Flexible LCD with LC Alignment andTight Bonding by Surface Grooves
E.-Y. Kim, I. Y. Han, Y.-J. Lee, J. S. Gwag*, J.-H. Kim
Hanyang Univ., Korea*Yeungnam Univ., Korea

LCTp8 - 2

Tilted Orientation of Nematic LC on Aluminum
Anodic Oxide Film
Y. Kobayashi, S. Todo, K. Imai, S. Saito, T. Takahashi
Kogakuin Univ., JapanA new method to give the pre-tilt angle with the anodized aluminum film,
the inorganic material, was proposed. The anodic oxidation was carriedout in the flowing electrolytic solution. The tilted orientation was
obtained in the nematic LC cell.
LCTp8 - 3

Comparison of Surface Characteristics on Alignment
Films by Postbake Condition with NEXAFS
M. Kwak, H. Chung, H. Kwon, D. Han, Y. Yi, H. Jeon,
S. Lee, C. Lee, S. Cha
LG Display, Korea

The polyimide properties by post-bake temperature was analyzed by
NEXAFS. In the case of TN mode alignment film, C=C π* peak state
was detected dependent on temperature compare to IPS mode. It is
explained by the difference of material properties in charge of side
chain forming pre-tilt in TN mode.
LCTp8 - 4

Directional Property Change of Rubbed Polyimide
Films upon the Rubbing Condition
K.-J. Kim, H.-M. Kwon*, S.-M. Lee*, C.-G. Lee*,
M.-S. Kwak*, B. Kim
POSTECH, Korea
LG Display, Korea*

The angle dependence NEXAFS spectra at C K-edge on the twisted
nematic mode or in-plane switching mode PIs were measured to know
the rubbing parameter dependency. As increasing the pile contact
depth, the tilt angle α was linearly decreased but the stage speed
dependency was irregular in both samples.
31

LCT

We propose a fabrication method for flexible liquid crystal display (LCD)
using micro-sized grooves which are formed on UV curable polymer
layer. The UV curable polymer layer with surface grooves carries outaligning the LC molecules uniformly and making tight bonding of top
and bottom plastic substrate, simultaneously.

Wednesday
LCTp8 - 5

December 9
Fabrication of Bistable Surface and Control of PreTilt Angle by Alignment Material Coating Using an
Electro-Spray Method
N. Endo, Y. Kudou, S. Saito, T. Takahashi
Kogakuin Univ., JapanAn electro-spray method has been applied to coat the alignment
material on the substrate surface in LCDs. The fabrication of bistablesurface and the control of pre-tilt angle of LC cells have been tried byusing this method.
LCTp8 - 6

Effects of LCD Fabrication Process after Rubbing on
LC Alignment Film
I. Hirosawa, T. Koganezawa, H. Ishii*
Japan Synchrotron Radiation Res. Inst., Japan*
Nissan Chem. Inds., Japan

Effects of LCD fabrication process after rubbing on LC alignment film
(rubbed polyimide film) were investigated by grazing incidence X-ray
diffraction. It was founded that crystallization of surface polymers arestrongly affected by washing solvent and annealing temperature.
LCTp8 - 7

Orientation Characteristics of FLC on UV Curable LC
Polymer Film Used as An Alignment Layer
N. Kubota, T. Narita, Y. Oi, S. Saito, T. Takahashi
Kogakuin Univ., JapanA UV curable polymer layer is used as a pre-tilt controllable alignment
film. The uniform orientation of FLC cell was tried to fabricate using thepolymer layer. The experiments were carried out with two types ofpolymer films.
LCTp8 - 8

Formation of Bi-Stable Alignment Surface Using a
Mixture of Two Kinds of Photo-Alignment Material
Making LC Molecules Align to Distinctive Directions
for Polarization Direction of UV Light
K. Tsukada, T. Takahashi, S. Saito
Kogakuin Univ., Japan

A novel method is proposed to form alternating striped patterns to beplanar and mutually orthogonal to the neighboring patterns as a bistable anchoring substrate for LC molecules. A mixture of two kinds ofphoto-alignment materials based on the photo-dimerization reaction
and the photo-dissociation reaction is used as an alignment material.

32

Wednesday
LCTp8 - 9

December 9
Advanced Photo-Alignment Method with Fast
Response Time
A. R. Yoon, Y.-K. Kim, Y.-J. Lee, S. I. Jo, S. W. Choi,
J. S. Gwag*, J.-H. Kim
Hanyang Univ., Korea*Yeungnam Univ., Korea

We propose an advanced photo alignment method for uniform liquid
crystal alignment and fast response time with reactive mesogen whichis mixed in alignment layer through double step UV exposure process.
LCTp8 - 10

LCT

Studies of Frictional Properties on VA Mode
Alignment Films by Temperature Condition with
Frictional Force Microscopy
M. Kwak, H. Chung, H. Kwon, D. Han, Y. Yi, J. Jeon,
S. Lee, C. Lee, S. Cha
LG Display, Korea

The friction characteristics of VA mode alignment film by temperatureand rubbing conditions were studied with AFM/FFM. The total friction
was high by the increase of the surface roughness. This was describedby curved structure according to the potential. In rubbing condition, pretilt angle decreased depending on the rubbing strength.
LCTp8 - 11

Evaluation of the Temperature Dependence ofSurface Polar Anchoring Strength of LC Devices
Y. Yoshita, Y. Ohno, T. Ishinabe, T. Miyashita, T. Uchida
Tohoku Univ., JapanThe surface anchoring strength of liquid crystals is an importantparameter in evaluating their surface alignment properties. We used a
new high-precision method for determining liquid crystal parametersand measured the temperature dependence of the polar anchoring
strength on the surface of alignment layers to explain the surface
phenomena.
LCTp8 - 12

Surface Azimuthal Anchoring Measurement Method
Using Wedge LC Cell
S. K. Hwang, J. H. Kwon, J. S. Gwag
Yeungnam Univ., Korea

We present an advanced method finding an azimuthal anchoring bymeasuring optically cell thickness and twist angles simultaneously,
using a wedge LC cell. The twist angle and cell thickness are measured
by adopting the total intensity ratio method (TIRM) of the transmitted
light at three arbitrary wavelength regions.

33

Wednesday
LCTp8 - 13

December 9
Molecular Orientational Ordering in 5CB Thin Filmabove Tc on Rubbed Polyimide Film
T. Koganezawa, I. Hirosawa, H. Ishii*
Japan Synchrotron Radiation Res. Inst., Japan*Nissan Chem. Inds., Japan

We have measured dependence of the 5CB molecular distribution in athin layer aligned rubbed polyimide on temperature by means of GIXD.
We found that the N-I transition occurs at a temperature higher than thebulk-Tc.
LCTp8 - 14

Simultaneous Determination of Anchoring Energy
and Elastic Constants of Nematic LCs by
Capacitance Measurement
K. Iwaya*, H. Naito*,**, H. Ichinose***,M. Klasen-Memmer****, K. Tarumi*****

Osaka Pref. Univ., Japan**The Res. Inst. for Molecular Elec. Devices, Japan***Merck, Japan****

Merck KGaA, Germany

A method for the simultaneous determination of anchoring energy andelastic constants of nematic liquid crystals (NLCs) by measuring
capacitance (C) of NLC cells as a function of voltage (V) is proposed.
The applicability of the present method has been shown in Mix.A and
MLC-2039 (Merck Ltd.).
LCTp8 - 15

Multi-Domain Alignment of LC on Polyimide Layers
by Using Ion Beam Scanning Method
P. K. Son, S. W. Hwang, J. C. Kim, Y. T.-Hoon
Pusan Nat. Univ., Korea

We propose a technique for multi-domain alignment of liquid crystal on
polyimide layers through ion beam scanning that can be applied to thefabrication of liquid crystal displays with a large size. The turn-on time ofa 4-domain IVA cell was 35% faster than that of patterned verticalalignment cell.
16:40 - 18:00

LCT1: High Performance LCDs (1)Chair:
Co-Chair:

34

A. Kubono, Shizuoka Univ., Japan
H. Wakemoto, TMD, JapanTENRANWednesday
LCT1 - 1:
16:40

December 9

Invited Development of Super Hi-Vision Displays withHigh Picture Quality and Ultra High Definition
M. Kanazawa
NHK, Japan

Outlines of the Super Hi-Vision’s specifications as well as thedevelopment of a high dynamic range projector as one example of its
display capabilities are explained. The projector has a Super Hi-Vision
resolution and a high dynamic range of around 1,100,000 to 1.
LCT1 - 2
17:05

Panel Bruising Suppression for a MVA Mode Display
Y.-Y. Huang, H.-T. Yu
Chunghwa Picture Tubes, Taiwan

LCT1 - 3
17:25

PI-Less Technology Development for Vertical
Alignment TFT-LCD
T.-Y. Li, C.-W. Su, J.-T. Lian, C.-I Chiang, M.-D. Chou,
C.-H. Liu
Chunghwa Picture Tubes, Taiwan

A novel cell process is called PI-less is developed. PI-less can eliminate
the PI process and decrease UV exposing process. We have developeda large size MVA-LCD display in which the brightness can be increased
15%, the contrast ratio is over 1300:1. Besides, the response time still
can be kept.
LCT1 - 4L
17:45

Low-Voltage Driving TN-LCD with High Contrast
Ratio
M. Aimatsu, T. Ishinabe, T. Uchida, N. Watanabe*
Tohoku Univ., Japan*Toppan Printing, JapanWe analyzed the polarization shift inside twisted nematic liquid crystal
display (TN-LCD) and clarified the S-shaped polarization shift on
Poincaré sphere in black state was important to realize low-voltage
driving TN-LCD. We realized high contrast ratio of 150000:1 with low
driving voltage of 2.5V by optimization of optical compensation films.

Author Interviews
18:00 – 19:00

35

LCT

Concerned bruising behavior for a MVA display equipped withembedded touch sensor after varied finger moving gestures has beeneffectively prohibited through realizing the relation between protrusion
slope and its corresponding affective ratio.

Thursday

December 10
Thursday, December 10

10:40 - 12:15

TENRAN

LCT2: Advanced Blue Phase LC Technology
Chair:
Co-Chair:
LCT2 - 1:
10:40

H. Fujikake, NHK, Japan
M. Ozaki, Osaka Univ., Japan
Invited Potential and Challenges of Optically Isotropic
LCs for Display Applications
H. Kikuchi
Kyushu Univ., Japan

The phase behavior and electro-optical Kerr effect of the opticallyisotropic liquid crystal composites including polymer-stabilized bluephases, which require no surface treatment for device fabrication, arepresented. New LCD materials with anomalously large Kerr constant,more than 10-8 mV-2 and fast response, less than sub-milli-second aredeveloped.
LCT2 - 2:
11:05

Invited Mono-Domain Growth of LC Blue Phase and
Its Application to Photonic and Display Devices
K. Shirota, S. Kawata
RIKEN, Japan

We have developed a mono-domain liquid-crystalline blue phase withan extended temperature range by polymer-stabilization. Afterinvestigating the optical properties of this sample, we demonstrated the
bandgap lasing at room temperature as an example of photonic
application.
LCT2 - 3:
11:30

Invited Simulation Study of Cholesteric Blue Phases
Under an Electric Field
J. Fukuda*, M. Yoneya*, H. Yokoyama*,***AIST, Japan**Kent State Univ., USA

We carry out a numerical study based on a Landau-de Gennes theory
to investigate how a cholesteric blue phase responds to an electric field.
We find a distortion of the unit cell of blue phases, and therearrangement of disclination lines.
LCT2 - 436

Withdrawn

Thursday

December 10

LCT2 - 5L
11:55

Blue Phases Observed for a Bent-Core Molecule with
Biaxial Nematic Phase
M. Lee, H. Higuchi*, K. Song, S.-W. Choi, H. Kikuchi*
Kyung Hee Univ., Korea*Kyushu Univ., Japan

We investigated the blue phases (BPs) observed for a bent-coremolecule with biaxial nematic (N) phase doped with a small percentage
of a highly twisting chiral additive. Employing the biaxial N mesogen asa host material, the observed temperature range of BPI was expanded
to several 10 °C.

13:20 - 14:50

LCT----- Lunch -----TENRAN

LCT3: Emerging LC Materials
Chair:
Co-Chair:
LCT3 - 1:
13:20

K. Ishikawa, Tokyo Inst. of Tech., Japan
A. Fujita, Chisso Petorochem., Japan
Invited Liquid Crystals for TFT Applications
J. Hanna*,**, H. Iino*,**, K. Nakano**

Tokyo Inst. of Tech., Japan**JST-CREST, Japan

Liquid crystals, which have a structural feature of having an aromatic πconjugate system and hydrocarbon chains, are utilized as an organic
semiconductor for TFTs. Their unique properties give several
advantages over non-liquid crystalline materials. In this talk, we discussand demonstrate high potential of liquid crystals as a TFT material.
LCT3 - 2:
13:45

Invited Negative Dispersion Reactive Mesogen
Materials for Optical Films
O. Parri, R. Harding*, K. Adlem, P. Saxton,
K. Skjonnemand, D. Wilkes
Merck Chems., UK
Merck Advanced Tech., Korea*

Reactive mesogen mixtures which can be processed to make thinbirefringent films where the wavelength dispersion is controlled byformulation will be discussed. Examples of thin quarter wave coatedfilms with negative retardation dispersions will be presented. We believethese films can be used in circular polarizers for OLED displays.

37Thursday
LCT3 - 3
14:10

December 10
Growth of Metal Nanoparticles Doped in Nematic LCs
and Its Effect on the Electrooptic Properties
H. Yoshida, K. Kawamoto, Y. Tanaka, H. Kubo, A. Fujii,
M. Ozaki
Osaka Univ., Japan

A technique to fabricate highly dispersed metallic nanoparticle - liquid
crystal suspensions is demonstrated. The technique is not based on
chemical synthesis of nanoparticles but is purely a physical process.
We describe the fabrication procedure and the growth of nanoparticles
observed inside the nematic LC.
LCT3 - 4

Withdrawn

LCT3 - 5L
14:30

Polarization Converter for Axial to Azimuthal
Polarization Based on Axially Symmetric Twisted
Nematic LC Film
S.-W. Ko, Y.-G. Fuh, T.-H. Lin*
Nat. Cheng Kung Univ., Taiwan*Nat. Sun Yat-Sen Univ., Taiwan

Axially symmetric twisted nematic liquid crystal (ASTNLC) is
demonstrated in paper and explained the structure by analyzing theobserved phenomena. ASTNLC was used successfully to convert
axially polarized light into azimuthally. Simulation results agree well withexperiment. ASTNLC is useful for axially, azimuthally and verticallypolarized light, as polarization converter.
----- Break -----

15:00 - 16:30

TENRAN

LCT4: New Functional LC Devices
Chair:
Co-Chair:
LCT4 - 1:
15:00

T. Nose, Akita Pref. Univ., Japan
O. Parri, Merck Chems., UK
Invited LC Lens and Its Application to Imaging
Devices
S. Sato, M. Ye
Akita Pref. R&D Ctr., Japan

This paper describes the applications of liquid crystal (LC) lens toimaging devices with electrically tunable focal lengths and a zoom
system built up using LC lenses without any moving parts. Fabricationof a thin LC lens with low driving voltages and reduction in responsetime are also reported.

38

Thursday
LCT4 - 2:
15:25

December 10
Invited Photo-Responsive LCs for Photon-Mode
Color Display
S. Kurihara, T. Ogata, M. Moritsugu*
Kumamoto Univ., Japan*
Kinki Univ., Japan

Chiral photochromic compounds having plural chiral sites andazobenzene groups were synthesized. A cholesteric phase was
induced by adding the photochromic compounds in a nematic liquid
crystal. Reversible change in selective reflection was achieved by lightirradiation to cause trans-cis phtoisomerization of azobenzene.
Displaying High Quality Images on a Field Sequential
Color LCD Using Active Matrix Narrow-Gap TN
Modules Embedded with Nanoparticles
S. Kobayashi, T. Miyama, T. Kineri, Y. Shiraishi,
N. Toshima, K. Takatoh, M. Akimoto, M. Okita*,
H. Takemoto**, T. Fujisawa***, K. Takeuchi***,
H. Takatsu***Tokyo Univ. of Sci. Yamaguchi, Japan*HDT, Japan**Okaya Elec. Ind., Japan***
DIC, JapanWe demonstrate field sequential color (FSC)-LCDs using two kinds
narrow-gap TN(NTN)-LCD(d=2µm) modules: one is a 4 inch TFT
SVGA(800 × 600 pixels) and the other is a nanoparticle doped directdriven 10cm10cm, and 24 × 24 pixels. They are featured by highlegibility under high illuminating condition like the direct sun shine.
LCT4 - 4
16:10

Tandem-Type Variable Optical Attenuator Composedof Both Smectic and Nematic LC Cells
M. Komatsu*, S. Noka**, T. Kitamura***, A. Kakuta,
S. Kobayashi
Chitose Inst. of S&T, Japan
Kyosera Kinseki Hokkaido, Japan**
Miwa Elec., Japan***
Kyushu Nanotec Optics, Japan*The switching process of the N cell was carried out in the transient lightscattering mode without a polarizer. A prototype tandem device wasfabricated. It was observed that it had similar good attenuation
properties as compared to a single Sm device and that the output lightvaried continuously.
----- Break -----

39

LCT

LCT4 - 3
15:50

Thursday

December 10

16:40 - 18:05

TENRAN

LCT5: High Performance LCDs (2)Chair:
Co-Chair:
LCT5 - 1:
16:40

M. Suzuki, Merck, Japan
S. Komura, Hitachi Displays, Japan
Invited Fast Response of Hybrid TN LCD with Wide
Viewing Angle
A. Kubono
Shizuoka Univ., Japan

Low-voltage operation and fast response of liquid crystal displays canbe achieved using a hybrid twisted nematic (HTN) cell, which isfabricated by applying the conventional twisted nematic (TN) cell.
Moreover the use of hydroxypropyl cellulose (HPC) as an alignment
layer results in a wide viewing angle.
LCT5 - 2
17:05

Transflective LCD Using Photo- and NanoparticleInduced Alignment Effects
T.-H. Lin, W.-Z. Chen, Y.-T. TsaiNat. Sun Yat-Sen Univ., Taiwan

This work presents a transflective LCD with a single cell-gap in a dualalignment configuration. The vertical alignment induced by POSS canbe changed into a homogeneous alignment via absorption of photoexcited azo dye. The LC molecules at the transmissive and reflective
pixels are homogeneous and hybrid alignment, respectively.
LCT5 - 3
17:25

Improving Blue Shift Technology for Mobile
Applications
Y.-P. Kuo, K.-S. Tsao, S.-C. F. Jiang, C.-H. Shih,W.-M. Huang
AU Optronics, Taiwan

We’ve designed an improved blue-shift display utilizing multi-RGB cell
gap with Red and Green protrusion light leakage. ∆E(u, v,) at dark stateis 0.009 and average ∆E(u, v,) at gray level is 0.02 lower thanconventional design.

40Thu./Fri.
LCT5 - 4
17:45

December 10/11
Optimization of Circular Polarized Transflective
Vertical Alignment LC Cell
J.-W. Moon, J.-M. Choi, G.-D. Lee
Dong-A Univ., Korea

We propose an optical configuration for transflective vertical alignment
liquid crystal cell with circular polarizer to enhance the viewing angle inthe dark state. From calculations, we confirm that the proposed
configuration can show high viewing angle property compared withconventional configuration.

LCT

Author Interviews
18:00 – 19:00

Friday, December 11
9:00 - 10:20

TENZUI

LCT6: Measurement Method and Characterization
Chair:
Co-Chair:

M. Inoue, Toyo, Japan
H. Yokoyama, Kent State Univ., USA

LCT6 - 1
9:00

A New Measurement Method of Ion Quantity in LC
Cells
S. Ogawa, T. Miyashita, T. Uchida, K. Nakao*,
H. Wakemoto*Tohoku Univ., Japan*
Toshiba Mobile Display, Japan

We have newly developed the method for measuring ion quantity in a
LC cell. Triangular waveform voltage with high frequency sine waveform
voltage is applied to the cell. The high frequency current is removed bysuitably-designed filters. We can measure only the current peak causedby the movement of ions.
LCT6 - 2
9:20

Determination of Dispersion of Refractive Indices
Based on Plural Incidence Renormalized
Transmission Spectroscopic Ellipsometry
K. Goda, M. Kimura, T. Akahane
Nagaoka Univ. of Tech., Japan

A novel analysis method to determine the dispersion of refractive
indices based on the plural incidence renormalized transmission
spectroscopic ellipsometry is proposed. The continuous dispersion ofordinary and extraordinary refractive indices of nematic liquid crystal
corresponding to the wavelength can be determined.

41Friday

December 11

LCT6 - 3
9:40

A Method to Monitor Birefringence ∆n of LC at Small
Size Panel
Y.-L. Liao, S.-H. Hung, C.-H. Shih, W.-M. Huang
AU Optronics, Taiwan

We successfully developed a simple method to monitor birefringence∆n of LC mixture and solved small size LCD panel is difficult to measure∆n of LC in the cell. A linear dependence between ∆n-shift% and GCFID area% of diluter is shown and which can be used to estimate ∆nvalue.
LCT6 - 4
10:00

Polarization Imaging for Characterization of LCDs
and Their Components
P. Boher, T. Leroux, V. Collomb-Patton, T. Bignon,
D. Glinel
ELDIM, France

A new imaging colorimeter and polarimeter is presented. The
homogeneity of a LCD backlight with BEF film is tested. Measurements
on LCD without top polarizer allow checking the homogeneity of thecrystal cell rotation. Finally polarization based stereoscopic 3D display
is checked all over the surface and within pixels.
----- Break -----

10:40 - 12:05

TENZUI

LCT7: New Alignment Technology
Chair:
Co-Chair:
LCT7 - 1:
10:40

M. Kimura, JSR, Japan
T. Ishinabe, Tohoku Univ., Japan
Invited Nanostructured Orientational Surface
Patterns for Functional LC Alignment
H. Yokoyama, J. Niitsuma*, J. S. Gwag**, J. Fukuda***,M. Yoneya***Kent State Univ., USA*JAIST, Japan**Hanyang Univ., Korea***
AIST, Japan

Orientational microscopic patterning of alignment surfaces has
attracted increasing attention through the last decade as a novel
approach to functionalization of cell surfaces. I briefly review theunderlying principle of the patterned alignment and also thedevelopment of fabrication processes with recent results using photoalignment and nanoimprint lithography.

42

Friday
LCT7 - 2
11:05

December 11
LC Device Having the Nano-Groove Structure by
Nano-Imprint Lithography
H. Takahashi, T. Sakamoto, H. Okada
Univ. of Toyama, Japan

We have investigated an alignment of nematic liquid crystals using 50
nm nano-grooves fabricated by electron-beam and nano-imprint
lithographies. Contrast ratio of twsit nematic cell was 44:1. An azimuthal
anchoring energy was obtained 7.9 × 10-5 J/m2 and polar anchoringenergy were obtained 4.63 × 10-5 J/m2.
LCT7 - 3
11:25

LC Alignment on the Films of Polyhedral Oligomeric
Silsesquioxane Nanoparticle

LCT

S.-C. Jeng, Y.-M. Shieh*, S.-J. Hwang*Nat. Chiao Tung Univ., Taiwan*Nat. United Univ., Taiwan
Polyhedral oligomeric silsesquioxane (POSS) nanoparticle has been
applied on the ITO glass substrate as the alignment layer ofhomeotropic LCDs. The characteristics of POSS alignment film
fabricated by different treatments, spin coating, melting, and rubbing,were systematically investigated. The preliminary results showed thatthe different surface treatments had the similar anchoring energy andsurface energy.
LCT7 - 4
11:45

Effect of Nanoparticles Embedded in the Alignment
Layer on the Interfacial Properties of LCD
M. Akimoto, K. Sawa*, K. Suzuki, K. Isomura,
S. Kobayashi, K. Takatoh
Tokyo Univ. of Sci. Yamaguchi, Japan*Keio Univ., Japan

We here study the interfacial properties of liquid-crystal display with
nanoparticle-embedded alignment layers at a variety of fabricating
conditions. We found that the addition of nanoparticles into polyimidealignment layer reduces the pretilt angle and the azimuth anchoring
strength, whereas it makes no significant difference to the polaranchoring strength.
----- Lunch -----

43

Friday

December 11

13:20 - 14:00

TENZUI

LCT8: Advanced Non-Contact Alignment Technology
Chair:
Co-Chair:

M. Kimura, Nagaoka Univ. of Tech., Japan
I. Hirosawa, Japan Synchrotron Radiation Res. Inst.,
Japan

LCT8 - 1
13:20

The Use of Photoalignment Technology inTransflective LCD
T. Du, L. Yao, Q. Yu, V. Chigrinov, H. S. Kwok
Hong Kong Univ. of S&T, Hong Kong

In this paper, photoalignment technology is studied for producing thedomain alignment structure as well as the patterned in cell retardation
film for transflective liquid crystal display application.
LCT8 - 2
13:40

Photo Alignment Characteristics of FluorineContaining Polyimides as an Alignment Layer
H. Ito, T. Mizunuma, S. Sato, K. Nagai, S. Matsumoto
Meiji Univ., Japan

We reported the study of 6FDA-TeMPD which a fluorine-containing
polyimide (PI) having one phenyl group in the diamine moiety, for use asa photo alignment layer. In addition, we determined the relationshipbetween the alignment capability and the number of methyl groups inthe diamine moiety.

Author Interviews
16:20 – 17:20

Supporting Organization:
The Japanese Liquid Crystal Society (JLCS)

Call for Papers

Special Section
on Electronic Displays
IEICE Transactions on Electronics
Submission Deadline: Feb. 26, 2010
http://ny7084.rie.shizuoka.ac.jp/eid/top-e.htm
44

Wednesday

December 9

Workshop on Active Matrix Displays
Wednesday, December 9
13:20 - 14:45

TENZUI

AMD1: System on Panel
Chair:
Co-Chair:AMD1 - 1:
13:20

G. Fortunato, CNR-IMM, Italy
M. Hiramatsu, TMD, Japan
Invited System on Glass Circuit Design Technology
Y. Aoki, H. Kimura
Toshiba Mobile Display, Japan

AMD1 - 2:
13:45

Invited Ultra-Low Power System-LCDs with PixelMemory Circuit
N. Matsuda, I. Takahashi, T. Yamaguchi, Y. Moriya,
S. Nishi, S. Gyouten, Y. Kubota, S. Fujiwara, A. Miyata,Y. Itoh
Sharp, Japan

This paper describes the system-LCDs with a pixel-memory driving
scheme and PNLC (Polymer Network Liquid Crystal) technology which
can achieve ultra-low power consumption and high reflectance. We
have developed three types of 1.3 inch-diagonal LCDs with 96x96 pixel
resolution; B/W monochrome, 8-step gray-scale, and 8-color.
AMD1 - 3
14:10

Integrated Ambient Light Sensor with an LTPS NoiseRobust Circuit and a-Si Photodiodes for AMLCDs
F. Matsuki, K. Hashimoto, K. Sano*, F.-Y. Hsueh*,
T.-H. Wu*, R. Kakkad*, C.-C. Liu*, W.-S. Chang*,
J. Ayres**, M. Edwards**, N. Young**
TPO Displays, Japan*TPO Displays, Taiwan**
Philips Res., UK

Architecture and performance of integrated ambient light sensor with
LTPS and a-Si technologies are presented. The sensor consists of an
LTPS differential converter circuit and highly efficient a-Si photodiodes,
and achieves 5 ~ 55,000 lux detection with below 5% error and stable
operation under LCD driving noises.

45

AMD

We have been developing System on Glass (SOG) displays andsuccessfully mass-produced some LCDs for mobile use. In this paper,
our new SOG based approach to extend the scope of application, forexample, a new conceptual low power full digital display with serial
digital interface, will be presented.

Wednesday
AMD1 - 4L
14:30

December 9
Nano-Si Non-Volatile Memory (NVM) Cell Integrated
in LTPS-TFT
A.-T. Cho, W.-Y. Liu, T. Wang, A. Chen, Y. Wu,
J.-S. Chen, C.-H. Li, W.-M. Huang
AU Optronics, Taiwan

New nano-Si nonvolatile memory cell with field enhanced trapping
structure in poly-Si (LTPS) TFTs have been demonstrated successfully
on glass panel. A program/erase window was ~3 V with 100ms P/E
speed, good endurance of 1E4 P/E cycles, and ~2 V of window
remained after 1E4 seconds for data retention.
----- Break -----

15:00 - 16:15

TENZUI

AMD2: Si Device Technologies
Chair:
Co-Chair:R. Kakkad, TPO Displays, Taiwan
S. Horita, JAIST, Japan

AMD2 - 1
15:00

Gate Driver and Data Switching Circuit Integrated
LCD Panel by High Performance Bottom Gate
Microcrystalline Si TFT
M. Moriguchi, Y. Saitoh, T. Yoshida, Y. Kanzaki,
A. Hoshino, Y. Takanishi, Y. Iwase, A. Tagawa,
M. Sakamoto, Y. Takahashi, A. Hatano
Sharp, Japan

We have developed the microcrystalline Si (µc-Si) TFTs with highmobility and small bias stress Vth shift. The gate driver and dataswitching circuit integrated µc-Si TFT 12.1” WXGA LCD panel was
successfully fabricated by using same process flow as a-Si TFT.
AMD2 - 2
15:20

Microcrystalline Silicon Thin Film Transistors by
Excimer Laser Annealing for Large-Sized TFT-LCDs
T. Okabe, T. Yaneda, T. Aita, T. Inoue, M. Takei,
Y. Harumoto, H. Nishiki, N. Kimura
Sharp, Japan

We successfully fabricated microcrystalline silicon thin film transistors
with inverted-staggered structure by applying Excimer Laser annealing
process to conventional a-Si TFT process. Field effect mobility of the
TFTs is 2.2cm2/Vs that is good enough for next generation large-sized
TFT-LCDs with high resolution of 4K2K or more.

46

Wednesday
AMD2 - 3
15:40

December 9Comparison of Corning Silicon-on-Glass Technology
and ELA Poly-Si TFT Uniformity Performance
J. G. Couillard, C. K. Williams, C. Wang, E. Mozdy,
J. Cites, J. Choi*, S. Park*, S. Saxena*, Y. Son*,
J. Cheon*, J. Kim*, J. Jang*, J. Lai**, J. Chang**,
G. Heiler**, T. Tredwell**Corning, USA*Kyung Hee Univ., Korea**Carestream Health, USA

The performance uniformity of TFTs fabricated in single-crystal Siliconon-Glass (SiOG) and ELA poly-Si substrates was investigated. The
SiOG devices exhibited better electrical performance with greater
uniformity in mobility, threshold voltage, and subthreshold swing. Thisillustrates potential advantages for SiOG in display manufacturing.
AMD2 - 4L
16:00

AMD

Fabrication of Poly-Si TFT CMOS Inverter by Direct
Stencil Maskpatterning during Sputtering Film
Deposition
W. Yeh, C. Chiu, B. Huang
Nat. Taiwan Univ., Taiwan

poly-Si TFT CMOS inverter was fabricated by direct patterning during
sputtering deposition through stencil masks. The fabricated n-/pchannel TFTs exhibited a subthreshold slope of 2.5/1.7 V/decade andon/off ratios of 4 × 105/6 × 105. The fabricated poly-Si TFT CMOS
inverter showed full-range abrupt voltage transfer characteristics.
----- Break -----

16:40 - 17:40

TENYO

OLED3/AMD3: AM-OLED (1)Chair:
Co-Chair:A. Mikami, Kanazawa Inst. of Tech., Japan
T. Inoue, TDK, Japan

OLED3/
AMD3 - 1
16:40

An OLED-on-Silicon Pixel Structure forMicrodisplays
B.-C. Kwak, H. Kim, H.-S. Lim, O.-K. Kwon
Hanyang Univ., Korea

In this paper, we propose an organic light emitting diode on silicon(OLEDoS) pixel structure for microdisplays with 6-bit gray scale. The“ON” time pulse width of the pixel emission current for representation ofgray scale is determined by switching operation of p-MOSFET andramp signal.

47

Wednesday
OLED3/
AMD3 - 2
16:55

December 9
A Low Mask Count Top Gate Process for AMOLED
Displays Based on Amorphous or Polymorphous
SiliconP. Schalberger, H. Baur, T. Buergstein*, N. Fruehauf
Univ. Stuttgart, Germany*
Robert Bosch, Germany

We have developed a top gate a-Si:H process for AMOLED displays
which requires only four mask steps for the realization of passivatedTFTs. Furthermore we have successfully processed pixel circuits, gate
drivers and AMOLEDs.
OLED3/
AMD3 - 3
17:10

Three-Dimensional Organic Field-Effect Transistors
M. Uno*,**, K. Nakayama*, J. Takeya**Osaka Univ., Japan**TRI-Osaka, Japan

We have developed easy MEMS-based processes that realize threedimensional organic field-effect transistors with multiple verticalchannels on plastic platforms. The devices present outstanding current
and on-off ratio which sufficiently drive pixels of organic light-emitting
diodes.
OLED3/
AMD3 - 4L
17:25

Development of an Industrial Compatible Process for
BG OTFTs Using Solution Processable Organic
Semiconductors
M. Carrasco-Orozco, C. Leonhard, P. Brookes, T. Cull,
D. Mueller, G. Lloyd, F. Meyer, S. Tierney, J. Canisius,
M. Heckmeier, J. Nakanowatari*
Merck Chems., UK*Merck, Japan

We present our newly developed materials compatible with industrial
process in an effort to bring the use of solution processable organic
semiconductors closer to mass production. We demonstrate OTFTs
with mobilities over 1.5 in BG architecture and (sputtered) silver
electrodes.
----- Break -----

48

Thursday

December 10
Thursday, December 10

9:00 - 10:10

TENGYOKU

AMD4/OLED4: AM-OLED (2)Chair:
Co-Chair:Y. Matsueda, Matsueda Consulting, Japan
S. Utsunomiya, Seiko Epson, Japan

AMD4/
Invited Top Emitting White OLED Technology for
OLED4 - 1: Small and Medium-Sized AMOLED Displays
9:00
D. Peng, R. Nishikawa
TPO Displays, Taiwan
A 3.5” nHD AMOLED display has been developed with top emitting
WOLED + CF technology. It features high-resolution, low power, andextended lifetime. Moreover, to improve the uniformity for highresolution AMOLED, a module compensation approach has been
applied. With these technologies, a high-resolution AMOLED display
with better front-of-screen performance could be achieved.

J. Sakata, H. Ohara, M. Sasaki, T. Osada, H. Miyake,
H. Shishido, J. Koyama, Y. Oikawa*, H. Maruyama*,
M. Sakakura*, T. Serikawa, S. Yamazaki
Semiconductor Energy Lab., Japan
Advanced Film Device, Japan*

We have developed a 4.0-inch QVGA AMOLED display integrated withgate and source driver circuits using amorphous In-Ga-Zn-Oxide TFTs.
And we have successfully developed the world’s first 3.4-inch QHD
AMOLED display integrated with driver circuits.
AMD4/
OLED4 - 3
9:50

Sample and Hold DeMUX Method for Threshold
Voltage Compensation Pixel Circuits of AMOLEDs
S. Choi, C. Kang, S. Hwang, K. Kim, B. Kim
Samsung Mobile Display, Korea

In this paper, a new demultiplexing method is proposed to ensure
adequate time for compensation of threshold voltage variation in a
LTPS TFT. An AMOLED panel has been successfully developed anddriven at 120Hz frame frequency using the proposed method.
----- Break -----

49

AMD

AMD4/
Invited Development of 4.0-in. AMOLED Display with
OLED4 - 2: Driver Circuit Using Amorphous In-Ga-Zn-Oxide
9:25
TFTs

Thursday

December 10

10:40 - 12:10

TENGYOKU

AMD5: Sensing Devices
Chair:
Co-Chair:AMD5 - 1:
10:40

J. Jang, Kyung Hee Univ., Korea
H. Hamada, Sanyo Elec., Japan
Invited Flexible Sensors Integrated with Electronic
Circuits Based on Polysilicon Thin Film Transistor
G. Fortunato, A. Bearzotti, M. Cuscunà, A. Macagnano,
L. Maiolo, F. Maita, L. Mariucci, A. Minotti, S. Pantalei,
A. Pecora, D. Simeone, A. Valletta, E. Zampetti
CNR-IMM, Italy

Sensors with integrated readout circuits, based on low-temperaturepolysilicon TFTs, have been fabricated on flexible substrates using aprocess we recently developed on polyimide. In particular, a humidity
sensor, based on BCB, and an ammonia sensor, based on polyaniline(PANi) nanofibres produced by electrospinning technique, arepresented.
AMD5 - 2:
11:05

Invited Printable Organic Transistor Integrated
Circuits for Large-Area Sensors and Actuators
T. Sekitani, U. Zschieschang*, H. Klauk*, T. Someya
Univ. of Tokyo, Japan
Max Planck Inst. for Solid State Res., Germany*

Employing printing techniques, we fabricated large-area organic
transistor active matrices on plastic films for applications to large-area
sensors and actuators. Furthermore, we manufactured ultra-fine topcontact organic transistors by combining the sub-femtoliter inkjet andself-assembled monolayer technologies. A 1-µm channel length wasachieved without pre-patterning or pre-treatment on high-performanceorganic semiconductors.
AMD5 - 3
11:30

Vertical a-Si Schottky Diodes and NIP Diodes for
Photo-Sensing Applications in LTPS Displays
R. Kakkad, R. Chang, C. C. Liu, F. Y. Hsueh, K. C. Yang,
H. Y. Liang, K. Sano, F. Matsuki, K. Hashimoto,N. D. Young*
TPO Displays, Taiwan*
Philips Res., UK

Vertical a-Si Schottky and NIP photodiodes were integrated into LTPS
TFT array fabrication process for photo-sensing applications. These
diodes have show good spectral response, signal, signal to noise ratio
compared to lateral LTPS diodes. Detection of ambient light as low as
1-10 lux was achieved using these diodes.

50Thursday
AMD5 - 4
11:50

December 10
Characterization of Si Films Crystallized by RTA for
Photo-Sensor DiodeJ. de Dieu Mugiraneza, T. Miyahira, A. Sakamoto,T. Noguchi, C.-P. Chiu*, M.-H. Chen*, W.-C. Yeh*
Univ. of the Ryukyus, Japan*NTUST, Taiwan

We report on anticipated photoconductivity of poly-Si Thin films
prepared by sputtering at room temperature on glass and annealed by
Rapid Thermal Annealing (RTA). Results of photoconductivity andelectrical characteristics show potential application in photo-sensor
diodes for futuristic System on Glass (SOG).
----- Lunch -----

13:20 - 14:45

TENGYOKU

AMD6: Organic TFT

AMD6 - 1:
13:20

AMD

Chair:
Co-Chair:T. Sekitani, Univ. of Tokyo, Japan
K. Nomoto, Sony, Japan
Invited A 169 dpi Flexible OTFT Backplane with
Printed Organic Semiconductor for Electrophoretic
Display
N. Kawashima, N. Kobayashi, N. Yoneya, H. Ono,
T. Fukuda, T. Ohe, Y. Ishii, A. Nomoto, M. Sasaki,
K. NomotoSony, Japan

We have developed a high resolution 169 dpi electrophoretic display
driven by partially printed OTFT backplane. The soluble organic
semiconductor of peri-xanthenoxanthene (PXX) was precisely
patterned by inkjet. The inkjetted OTFT exhibited the mobility of 0.4
cm2/Vs and the passivation layer was screen printed with small
degradation of TFT characteristics.
AMD6 - 2
13:45

High Resolution, 200 ppi LCD Driven by Entirely
Printed Organic TFT
K. Matsuoka*,**, O. Kina*,***, M. Koutake*,****,
K. Noda*,*****, H. Yonehara****, K. Nakanishi*, K. Yase*******Japan Chem. Innovation Inst., Japan**Konica Minolta Tech. Ctr., Japan***

Toppan Printing, Japan****DIC, Japan*****ADEKA, Japan******

AIST, Japan

We have succeeded in driving a high resolution polymer network liquid
crystal display (PNLCD) by using an organic thin-film transistor (OTFT)
array prepared by the microcontact printing (µCP) method.
51

Thu./Fri.

December 10/11

AMD6 - 3
14:05

Stable Bottom-Contact Organic Thin-Film Transistor
Array with Fluoropolymer Dielectric for Flexible
Displays
Y. Fujisaki, D. Kumaki, Y. Nakajima, T. Yamamoto,
H. Fujikake, S. Tokito
NHK, Japan

An air stable organic semiconductor material, DNTT, was used as theactive layer in combination of an amorphous fluoropolymer Cytop gate
dielectric. The device exhibited a near-zero turn-on voltage, a steep
onset, subthreshold swing of 0.26 V/decade, a low off current (<10-13A),and excellent stability under ambient conditions without passivation.
AMD6 - 4
14:25

Photopatterned Organic/Inorganic HybridComplementary Thin-Film Transistor Inverter
B. Kim, Y. H. Hwang, H. Moon, N. Jeon, B.-S. Bae,S. YooKAIST, Korea

We present our study on complementary thin-film transistor inverters
with aluminum indium oxide(AIO) for the n-channel and pentacene forthe p-channel fabricated by conventional photolithography method. The
AIO channel layer was prepared via sol-gel route by simple solution
processing. Our inverter shows a voltage gain of ~39 at VDD=15V.

Author Interviews
18:00 – 19:00

Friday, December 11
9:00 - 12:00

3F Foyer

Poster AMDp: Active-Matrix Devices
AMDp - 1

Novel Low Power Consumption Color Sequential
Display
Y.-H. Chen, S.-J. Chiou, L. Li, K.-H. Chien, S.-H. Yu,
C.-L. Liu, C.-N. Mo
Chunghwa Picture Tubes, Taiwan

A novel CSD has been developed. The pixel design combines threesubpixels into one-pixel. It greatly decreases addressing time by 3-gateline driving and remove storage capacitor. The CSD achieves high color
gamut, contrast and low power.
AMDp - 2

52

WithdrawnFriday
AMDp - 3

December 11
One-Chip Structure and Low Cost Design for 4.8-in.
WVGA a-Si TFT-LCDs
K.-C. Chiu, H.-H. Chen, Y.-N. Chu, W.-T. Tseng, H.-T. Yu
Chunghwa Picture Tubes, Taiwan

Chunghwa Picture Tubes, LTD. (CPT) has successfully implemented a
4.8-inch WVGA TFT-LCD display with One-Chip driving structure.
Comparing with traditional structures, this structure can save Driver-IC
cost by 31%, FPC cost by 48%, and PCB cost by 29.6%. It also saves
89% power consumption of digital voltage with One-chip structure.
AMDp - 4

A Novel a-Si TFT LCD with New AFFS for Superior
Sunlight Readability
M. S. Im, J. K. Park, J. H. Park, D. L. Choi, S. Y. Choi,
O. S. Son, D. H. Suh, S. Gon
Hydis Tech., Korea

AMDp - 5

Design Methodology for Operational Amplifiers
Using Poly-Si TFTs
K. Setsu*, H. Hashimoto*, M. Kimura*,***Ryukoku Univ., Japan**Innovative Materials & Processing Res. Ctr., Japan

Design methodology for operational amplifiers using poly-Si TFTs is
introduced. The TFTs are located in a direction perpendicular to laser
scan and divided to avoid self-heating degradation. Open-loop gain,
offset voltage and cut-off frequency are systematically evaluated.
AMDp - 6

High Stability Amorphous Shift Register Circuit with
Dual Gate Structure
C.-Y. Wu, C.-Y. Yang, C.-Y. Huang, H.-L. Chen
AU Optronics, Taiwan

A dual gate structure is introduced into the shift register to achieve highstability circuit. The output current of dual gate is noticeably improved.
Therefore, a longer lifetime of the proposed shift register is obtained.

53

AMD

We report the improvement in brightness, inner reflectance through
New AFFS TFT-LCD structure for outdoor readable panel. In
conclusion, the optimization of pixel structure has shown thetransmittance over 6.8%, contrast ratio over 1000:1 and in innerreflectance over 4.5%.

Friday
AMDp - 7

December 11
Power Consumption of Integrated a-Si:H Gate Driver
Using Simplified Structure
C.-S. Wei, C. C. Tseng, S. C. Liu, P. M. Chen, J.-S. Chen,
W.-M. Huang
AU Optronics, Taiwan

The integrated a-Si:H Gate Driver Circuits with the traditional structure
for new operation have much benefic for power loss. The new terminal
operation embedded on output TFT and stable TFT can reduce power
loss of 25%, and stability improvement. The simulation results also getgood agreement.
AMDp - 8

7.0-in. a-Si:H TFT-LCD with Stable Integrate Gate
DriverY.-J. Chen, H.-C. Chang, C. Yen, W. Wu, C. Yu
HannStar, Taiwan

We proposed a new a-Si gate driver with stable circuits for highperformance displays. The range of input signal can be decreased by
employing boostrapping method. The stable circuit reduces thecoupling ripples of the output signal efficiently. That are used in HSD 7
inch panels (800*480).
AMDp - 9

A Repairing Method for the Interlaced Gate Driver In
Array (GIA) Circuit
Y. R. Fan*,**, W. J. Dai*,**, M. Lv*,**, P. Liao*,**,
S. Chung*,**, C. T. Lee*,**, T. S. Jen*,***Inst. of Jiangsu (IVO) FPD Tech. & Res., China**InfoVision OptoElect., China

A novel repairing method was successfully demonstrated on the 14.1
inch interlaced GIA TFT-LCD.
Each GIA circuit unit has acorresponding redundant circuit for repairing the defective unit toimprove the GIA introduced yield loss and maintain the same
production yield as COG/COF type TFT-LCDs.
AMDp - 10

The Improvement of Photo-Leakage-Current for PType Low Temperature Poly-Si TFTs
Y.-J. Hsu, M.-H. Lee, J.-S. Chen, W.-M. Huang
AU Optronics, Taiwan

The divergence of subthreshold region due to backlight illumination was
improved by channel doping method. Channel doping using
phosphorous dopant can effectively suppress the photo-leakage current
in subthreshold region, which is induced by high build-in potential
between source and channel region. The divergence was reduced
without complex process steps.

54Friday
AMDp - 11

December 11
Influence of Grain Size on Voltage Swing andThreshold Voltage of Poly-Si Thin Film Transistors
F. Oshiro, A. Sakamoto, T. Noguchi, T. Ohachi*
Univ. of the Ryukyus, Japan*Doshisha Univ., Japan

A model of defects in poly-Si film by using grain size was proposed. The
gate voltage swing factor S which related to the threshold voltage wasestimated to calculate Id-Vg characteristics. The development of more
precise simulation of TFT is expected based on the proposed model.
AMDp - 12

The Investigation of Reliability in the Short Channel
SPC-Si TFT on the Glass Substrate
S.-G. Park, S.-H. Choi, Y.-J. Kim, M.-K Han
Seoul Nat. Univ., Korea

AMDp - 13

Crystallization of Amorphous Silicon Utilizing a Line
Plasma Scanning
N. Ohta, N. Imamura, H. Shimizu*, T. Kobayashi**,
H. Shirai
Saitama Univ., Japan*Saitama Ind. Tech. Ctr., Japan**Inst. of Physical & Chem. Res., JapanThe novel crystallization technique of a-Si is presented utilizing a linear
thermal plasma jet. The thermal plasma is confined linearly in a 10 cm
width near the a-Si surface. The TFTs fabricated on a thermal SiO2
coated n+-c-Si showed a mobility of 10-25 cm2/Vs and threshold voltageof 1-2V.
AMDp - 14

Hot Carrier Stress for Low-Temperature Poly-Si TFTs
with Various Widths
J.-H. Ye, M.-H. Lee, J.-T. Peng, J.-S. Chen, W.-M. Huang
AU Optronics, Taiwan

We proposed comprehensive hot carrier characterization for poly-Si
TFTs with various widths. Small and large width devices exhibit different
electric behavior and degradation under hot carrier stress. For large
width devices, self-heating was observed. Contour Plot of stress voltage
response for on-current degradation was also provided in this paper.

55

AMD

We have investigated the stability characteristics of short channel (3µm) SPC-Si TFT. The threshold voltage of short channel SPC-Si TFT
was increased considerably higher than that of long channel SPC-Si
TFT under the constant bias stress. However the threshold voltage shift
was reduced significantly employing AC-Bias stress.

Friday
AMDp - 15

December 11
Novel Self-Aligned Gate-Receded Structure for TFTs
with Solid Phase Crystallization for AMOLED Display
T.-M. Wang, L.-C. Lee, C. Hu, C.-Y. Chen, C.-S. Chuang
AU Optronics, Taiwan

For P-type TFT device with a short offset distance from Pp region toGate electrode, Ion is large enough (>10-5) and Ioff is suppressed (<10-8). After long time stress (105 sec.) under room temperature, Vt shift
is about 1V. Hot carrier effect and kink effect are also much improved.
AMDp - 16

Study on Capacitance-Voltage Characteristics of
Poly-Silicon Thin-Film Transistors
W. Choi, J. Jang
Kyung Hee Univ., Korea

We studied the capacitance-voltage (C-V) characteristics of poly-siliconthin-film transistors (TFT). The capacitance can be explained by amodel having three capacitance components for gate insulator of oxide,
gate-to-source/drain overlap and source/drain lateral pn junction.
AMDp - 17

Mechanism of Bias Temperature Instability for a-Si:HThin Film Transistors in Integrated Gate Driver
Circuits
K. C. Lin, J. C. Liao, J. J. Chang, H. T. Yang, Y. T. Hsieh,
Y. C. Chen, C. H. Liu, K. Wang, J. Lee, A. Wang
AU Optronics, Taiwan

In order to clarify instability mechanism of a-Si TFTs for integrated gate
driver, both the interface state densities (Nit) and trapped state densities(Ntrap) should be taken into consideration, which are determined fromcurrent-voltage characteristic curve after the bias temperature stress.
AMDp - 18

Withdrawn

AMDp - 19

Withdrawn

AMDp - 20

Electrical Characteristics of Short Channel a-Si:H
TFT with Cu Metal for Large-Size Panel
Y.-S. Cho, K.-H. Moon, C.-K. Ha, T.-H. Kim, S.-K. Choi,
C.-G. Lee, S.-Y. Cha, S.-Y. Choi*
LG Display, Korea*Kyungpook Nat. Univ., Korea

We studied the electrical characteristics of the short channelhydrogenated amorphous silicon TFT with Cu metal for large-size
panel. The ratio of on-current to off-current increases as the channel
length is reduced between Cu source and drain. We also demonstrated
the suppression of the off current by using back channel treatment.

56

Friday
AMDp - 21

December 11
Study of Short Channel Hydrogenated Amorphous
Silicon TFTs for TFT-LCD
Y.-H. Li, W.-Y. Lo, C.-H. Lin, Y.-C. Chen, C.-C. Chiu,
M.-S. Chen, W.-M. Huang
AU Optronics, Taiwan

The study investigated the electrical characteristic of short channel
length island-out structure a-Si:H TFT with field effect mobility of 0.54
cm2/Vsec, Vth of 1.2V and SS of 1.36 V/decade. The channel length
below 2.2 µm decreased turn-on current and field effect mobility due tosource-drain contact resistance.
AMDp - 22

Enhancement of a-Si:H TFT Performance by WellDesigned Structure
C. Ha, Y.-S. Cho, T.-H. Kim, K.-H. Moon, C.-G. Lee,
S.-Y. Cha
LG Display, Korea

AMDp - 23

Microcrystalline Silicon from a SiH2Cl2 and H2
Mixture Using a High-Density Microwave Plasma
Source Utilizing a Spoke Antenna
H. Shirai, K. Hamada, H. Matsui
Saitama Univ., JapanThe deposition study on microcrystalline silicon (µc-SiH:Cl) films ispresented by using a high-density microwave plasma-enhanced
chemical vapor deposition of a dichlorosilane, SiH2Cl2, and H2 mixture.
The thin-film transistors (TFTs) exhibited mobility of 2.6 cm2/Vs andthreshold voltage of 0.27V at 27Å/s in µc-SiH:Cl films.
AMDp - 24

Device Characteristics of Nanoscale Organic FieldEffect Transistors
T. Nagase, T. Hirose, S. Nishigami, T. Kobayashi,
R. Ueda*, A. Otomo*, H. Naito
Osaka Pref. Univ., Japan*
NICT, Japan

We investigate the device characteristics of organic field-effecttransistors with nanometer scaled channels. It is found that theelectrical characteristics of nanoscale organic transistors can becontrolled via the ionization potential of organic semiconductors. The
clear transistor operation can be achieved in organic transistors with 30
nm length channels.

57

AMD

A hydrogenated amorphous silicon (a-Si:H) thin-film-transistor (TFT)
performance was improved by well-designed structure. The structure
was designed to reduce the electrical resistance along the current pathin a TFT with a phosphorous delta-doped layer and a relatively thin aSi;H layer. More than 50% increase in mobility and transconductancewas obtained.

Friday

December 11

AMDp - 25

Withdrawn

AMDp - 26

Withdrawn

AMDp - 27

Withdrawn

AMDp - 28

Solution-Processed Thin Film Transistors with
Hafnium Indium Zinc Oxide for AMOLEDs Backplane
W. H. Jeong, G. H. Kim, H. S. Shin, H. J. Kim
Yonsei Univ., Korea

In this study, the effects of hafnium in InZnO system were investigated.
We also have fabricated hafnium indium-zinc-oxide (HIZO) thin filmtransistors (TFTs) by solution process. The HIZO TFTs showed a field
effect mobility of 2 cm2/Vs, an on/off current ratio of 4.95 ⅹ 106 and a
sub-threshold swing of 0.54 V/decade.These results could enable thefabrication of high performance HIZO TFTs for AMOLED backplanes
with solution process.
AMDp - 29

Hysteresis Phenomenon of Oxide-Based TFTs under
the Light Illumination
T.-J. Ha, S.-J. Kim, J.-S. Lee, S.-Y. Lee, H.-S. Park,
M.-K. Han, W.-G. Lee*, K.-S. Yoon*, Y.-W. Lee*
Seoul Nat. Univ., Korea*Samsung Elect., Korea

We have investigated the of hysteresis characteristics in oxide-based
thin film transistors (oxide-TFTs) under the dark and the illuminatedconditions. A larger hysteresis window was observed under theilluminated state. Deep trapping events may increase under the lightillumination, leading to the increase of quantities of initial trappedcharges.
AMDp - 30

Development of Solution-Based IZO TFT with
Organic Passivation and Laser Direct Writing
Technology
K.-H. Su, M.-C. Wang, C.-C. Yu, F.-W. Chang, Y.-C. Lai,
L.-Y. Lin, C.-Y. Ou, C.-Y. Chien, C.-H. Tsai, S. C. Chiang
Taiwan TFT-LCD Assn., Taiwan

In this paper, IZO thin film transistors were fabricated by solution
process and its passivation were directly patterned by laser. Field effectmobility and threshold voltage of IZO TFT with passivation layer were
0.4 cm2/V-sec and -3.8 V, respectively. Finally, a 4.1-inch QVGA a-IZO
TFT-LCD with organic passivation by laser direct writing technology was
successfully demonstrated.

58Friday
AMDp - 31

December 11
Method of Adjusting Threshold Voltage in Indium
Gallium Oxide Based Thin Film Transistors
S.-L. Wang, H.-W. Kuo, L.-H. PengNat. Taiwan Univ., Taiwan

We report methods to adjust the threshold voltage in indium gallium
oxide (IGO) based thin film transistors. The resulting TFTs exhibit good
operating properties with threshold voltage 4.6V and current on/off
modulation ratio (Ion/Ioff) increased from ~103 to ~107. The subthresholdswing and field-effect mobility are 0.8V/dec and 1.27cm2V-1s-1,
respectively.
AMDp - 32

Electrical Characteristics of ZnO Thin Film
Transistors with Laser Annealing
H.-S. Seong, J. H. Son, N. Jang, J. J. Kim, J. Y. Bak,
H. S. Kim, Y. Yun
Korea Maritime Univ., Korea

AMDp - 33

Withdrawn

AMDp - 34

Oxide TFT Rectifier with RF Antenna
S.-H. Cho, S.-W. Kim, D. W. Ihm, B. S. Bae, D.-H. Cho*,
C. W. Byun*, C. S. Hwang*, S. H. K. Park*
Hoseo Univ., Korea*ETRI, Korea

Rectifiers with oxide TFTs were developed. Oxide TFT rectifier showed
good DC output with AC input. The source/drain and gate electrodes
were Indium Thin Oxide (ITO), and active layer was also transparent
material of IGZO (Indium Gallium Zinc Oxide). We verified the optimum
condition for the maximum DC output.
AMDp - 35

Effect of Blocking Metal Layer on the Lateral
Polysilicon PIN Photodiode for AMLCD
S.-B. Ji, H.-S. Park, S.-H. Kuk, M.-K. Han
Seoul Nat. Univ., Korea

We fabricate lateral PIN photodiode with blocking metal layer andinvestigate the dependence of the photocurrent on the intrinsic region
length. The blocking metal layer forms additional parasitic capacitorswith the active layer, so that it causes the distribution of the electric field
to be changed.

59

AMD

We investigated the effects of laser annealing on ZnO TFTs.
Unannealed ZnO-TFTs had a threshold voltage of 21.6V and a fieldeffect mobility of 0.004 cm2/Vs. Laser annealing of the ZnO-TFTs by
200 laser pulses reduced their threshold voltage to 0.6 V and increased
their field effect mobility to 5.08 cm2/Vs.

Friday
AMDp - 36L

December 11
Characteristic Comparison between Complementary
Inverter Using Amorphous Oxide TFT and Polymer
Organic TFT and N-Type Inverter Using Amorphous
Oxide TFTs
T. Hasegawa*, T. Nakanishi*, M. Sakemi*, M. Kimura*,**,
K. Nomura***,****, T. Kamiya***,****, H. Hosono***,****,
T. Aoki*****, T. Kawase*****, S. Inoue******Ryukoku Univ., Japan**

Innovative Materials & Processing Res. Ctr., Japan***Tokyo Inst. of Tech., Japan****ERATO-SORST, Japan*****

Seiko Epson, JapanAn input-output characteristic of a complementary inverter using an
amorphous-oxide TFT and polymer-organic TFT is compared with an ntype inverter using amorphous-oxide TFTs. Although the transistor
characteristic of the amorphous-oxide TFT is superior to the polymerorganic TFT, the input-output characteristic of the complementary
inverter is sharper than the n-type inverter.
AMDp - 37L

Investigation on Oxidation Effect of Doped
Amorphous on Channel Region in TFT Array Process
X. Liu, X. Chen, S. M. Rim, W.-Y. Zhang, Z.-Y. Xie,
W. Wang
Beijing Orient Elect. OptoElect. Tech., China

Doped amorphous silicon oxidation is investigated to form TFT channel
through matrix test. We analyzed the effect of oxidation conditions on
the TFT electrical characteristics. Results indicated that power andpressure had great important on Ioff of TFT. With optimized oxidations,
we gained good I-V curve and high yield.
AMDp - 38L

Layout Design on Self Heating Effect for Peripheral
Circuit Application
C.-S. Wei, G. R. Shen, C.-Y. Huang, P. M. Chen,
S.-C. Liu, J.-S. Chen, W.-M. Huang
AU Optronics, Taiwan

The influence of layout design for excess self-heating reduction wasinvestigated. Especially for charging requirement, the novel design forthe peripheral circuit application such as integrated gate driver and data
multiplexer shows the 25% and 60% improvement by our simulation
results, respectively.

60

Friday

December 11

AMDp - 39L

Degradation Evaluation of Poly-Si TFTs byComparing Normal and Reverse Characteristics andBehavior Analysis of Hot-Carrier Degradation
T. Kasakawa*, H. Tabata*, R. Onodera*, H. Kojima*,
M. Kimura*,**, H. Hara***, S. Inoue****

Ryukoku Univ., Japan**Innovative Materials & Processing Res. Ctr., Japan***Seiko Epson, Japan

We propose degradation evaluation of poly-Si TFTs by comparing
normal and reverse characteristics. Since symmetrical normal andreverse characteristics indicate Joule-heating degradation whereas
asymmetrical normal and reverse characteristics indicate hot-carrier
degradation, they can clearly and easily be classified. Moreover,behavior of the hot-carrier degradation is analyzed.
AMDp - 40L

The Effect of Annealing on Amorphous Indium
Gallium Zinc Oxide Thin Film Transistors

Korea Univ., Korea*KIST, Korea
This paper presents the post annealing effects, caused by rapid thermal
annealing (RTA), on amorphous indium gallium zinc oxide (a-IGZO) thinfilm transistor (TFT)’s electrical characteristics, and analyzed its contact
resistance (RC) by using transmission line method (TLM) and atomic
force microscope (AFM).
AMDp - 41L

Fabrication and Charaterisics of Poly Si TFT on
Microsheet
S. Won, Y. Lee
Univ. of Seoul, Korea

We used thin flexible glass of 75 µm in average thickness. Glass
substrates are so thin that they can be bent to radius of curvature as
small as 3 inch. Glass substrate is borosilicate glass. We fabricatedPoly Si TFT on this substrate and investigated characteristics of the
TFT.

IDW Best Paper Award
This award will go to the most outstanding paper
selected from those presented at IDW ’09.
The 2009 award winners will be announced on the
IDW website: http://www.idw.ne.jp/award.html
61

AMD

H. S. Bae, J. H. Kwon, S. Chang, M. H. Chung, T. Y. Oh,
J. H. Park, S. Y. Lee*, B. K. Ju

Friday
AMDp - 42L

December 11
Top-Gate Type Oxide Semiconductor Based SelfAlignment Thin-Film Transistors Using Lift-Off
TechniqueF. Takeda, S. Naka, H. Okada
Univ. of Toyama, Japan

Top-gate type oxide-semiconductor based self-alignment thin-film
transistors using lift-off technique were investigated. Using lift-off
technique, overlapping length between source/drain and gateelectrodes was dramatically minimized as 0.25 µm. Obtained field-effectmobility, on-off ratio, threshold voltage were 22 cm2/Vs, 2 × 107, and-0.2 V, respectively.
AMDp - 43L

Influence of Grain Size Deviation for Channel Size on
Device Parameters of Poly-Si Thin Film Transistors
K. Shirai, F. Oshiro, T. Noguchi, T. Ohachi*
Univ. of the Ryukyus, Japan*
Doshisha Univ., Japan

Infulence of grain size deviation for channel size on thin film transistor(TFT) characteristics was evaluated using a defects model by varying
grain size in poly-Si film. Results of calculations show grain size
deviation and channel size strongly affects device characteristics suchas S-factor and Vth.
AMDp - 44L

TIPS-Pentacene Thin-Film Transistors with a
Molecular Guest-Host System by a Polymer Binder in
Different Solvents
M.-H. Chung, J.-H. Kwon, T.-Y. Oh, H.-S. Bae, S. Chang,
J.-H. Park, D.-H. Choi, B.-K. Ju
Korea Univ., Korea

This work presents the polymer binder and solvents effects on the
TIPS-pentacene thin-film transistors. TIPS-pentacene solutions wereprepared in different solvents, and poly(triarylamine) is added as apolymer binder. The device exhibits the best performance when thesolution is prepared with anisole as the solvent and PTAA as the binder.
AMDp - 45L

Fabrications of 6, 13-bis(Triisopropylsilylethynyl)Pentacene Thin-Film Transistors via Metal Transfer
Method Using a Polymer Stamp
T.-Y. Oh, J.-H. Kwon, M.-H. Chung, H.-S. Bae, S. Chang,
J.-H. Park, K.-Y. Dong, B.-K. Ju
Korea Univ., Korea

We fabricated 6,13-bis(triisopropylsilylethynyl) -pentacene thin-film
transistors using direct metal transfer method. With different surface
adhesion of substrates, patterns are formed from the relief region of thepolymer mold. We obtained an electrical characteristic, including fieldeffect mobility of 0.008 cm2/V·s, current on/off ratio of 1.6 × 103, andsubthreshold slope of 0.59 V/dec.
62

Friday
AMDp - 46L

December 11
The Characteristics of Bottom-Gate Thin Film
Transistor Adapted Nanocrystalline Silicon as Active
Layer by Catalytic CVD at Low Temperature (≤ 200°C)
Y.-J. Lee, K.-M. Lee, J.-D. Hwang, K.-S. No, S. Won,
J. Sok, K. Park, W.-S. Hong
Univ. of Seoul, Korea

The Nanocrystalline silicon (nc-si) films indicated that field effectmobility and stability are better than amorphous silicon. We attempted
modulation of hydrogen dilution ratio to achieve both the minimal
incubation layer and high deposition rate. We fabricated the nc-si TFT
as active layer.
AMDp - 47L

Direct Deposition Poly-Si Thin Films by Hydrogen
Diluted Silicon Sputtering Method
H. Chen*, W. Yeh, P. Huang, H. Chiang, P. Chen
NTUST, Taiwan*LYIT, Taiwan----- Lunch -----

13:15 - 14:40

TENGYOKU

AMD7: Oxide TFT (1)Chair:
Co-Chair:
AMD7 - 1:
13:15

T. Kawamura, Hitachi, Japan
H. Kumomi, Canon, Japan
Invited Impact of Subgap States on Peculiar
Characteristics of Amorphous Oxide Thin-Film
Transistor
T. Kamiya*,**, K. Nomura**, H. Hosono*,***Tokyo Inst. of Tech., Japan**

JST, Japan

Amorphous oxide semiconductor TFTs exhibit superior characteristics,
e.g. mobilities >10 cm2/Vs even in an amorphous phase and low
operation voltages. Here, we discuss their origins and importancebased on subgap electronic structures of a-In-Ga-Zn-O. It is also closely
related to recent issues, e.g. photoresponse of a-In-Ga-Zn-O TFTs.

63

AMD

Based on optimization of deposition parameters, we preparedhydrogenated poly-Si films with 52.1% crystalline volume fraction by DC
magnetron sputtering method. TFTs were fabricated based on this polySi film prepared at room temperature. The TFT showed transfer
characteristics with a On/Off current ratio of >105.

Friday
AMD7 - 2
13:40

December 11
Threshold Voltage Shift of Amorphous Oxide TFT
with Various Channel Length
J.-S. Lee, S.-J. Kim, H.-S. Park, S.-G. Park, D.-W. Kang,
M.-K. Han, W.-G. Lee*, K.-S. Yoon*, Y.-W. Lee*
Seoul Nat. Univ., Korea*Samsung Electronics, Korea

We have fabricated amorphous oxide-based TFTs and investigatedelectric characteristics such as threshold voltage shift with various drain
voltage. Short channel effect for rather long channel in oxide TFTs
comparing Si-Based TFTs and Vth variation could be explained with
DIBL of back channel and band diagram of oxide TFTs, respectively.
AMD7 - 3
14:00

IGZO TFTs with Good Environmental Stability andShort-Range Uniformity
H.-H. Hsieh, J.-Y. Huang, W.-P. Huang, Y.-H. Lin,
C.-C. Wu*
AU Optronics, Taiwan*
Nat. Taiwan Univ., Taiwan

As a strong candidate for AMOLED backplane, the novel oxide TFTs
based on IGZO are fabricated and investigated. The devices reveal
good environmental stability, good short-range uniformity, and moderate
DC bias stress stability.
AMD7 - 4
14:20

Amorphous In-Ga-Zn-O TFT-LCDs with High
Reliability
Y. Ohta, Y. Chikama, T. Aita, O. Nakagawa, T. Hara,
M. Suzuki, M. Takei, Y. Harumoto, Y. Mizuno, H. Nishiki,
N. Kimura
Sharp, Japan

We have developed amorphous In-Ga-Zn-O (IGZO) TFTs with theinverted-staggered structure. The TFT performance is good enough for
TFT-LCDs. In addition, we carefully evaluate the TFT reliability.The
reliability of IGZO TFT-LCDs is also evaluated under high temperature
ambient. In this report, we discuss our IGZO TFT process, performanceand product-level reliability.
----- Break -----

14:50 - 16:20

TENGYOKU

AMD8: Oxide TFT (2)Chair:
Co-Chair:64

T. Kamiya, Tokyo Inst. of Tech., Japan
T. Noguchi, Univ. of the Ryukyus, Japan

Friday
AMD8 - 1:
14:50

December 11
Invited Low Voltage Operating Amorphous Oxide
TFTs
T. Kawamura*,**, H. Uchiyama*,**, S. Saito*,**,
H. Wakana*, T. Mine*, M. Hatano**

Hitachi, Japan**JST, Japan

TFTs with a small subthreshold slope (SS) are required for low-voltage
operating circuits on large and flexible substrates. Using In-Ga-Zn-O
deposited at room temperature for a channel layer, we achieved 63 mV/
dec, the smallest SS ever reported for oxide TFTs. To achieve the small
SS, a fully-depleted off-state was employed.
AMD8 - 2:
15:15

Invited Solution-Processed Indium Zinc Oxide Thin
Film Transistors for AMOLED Operation
J.-B. Seon, M.-K. Ryu, K.-B. Park, I. S. Kee, Y. G. Lee,
B.-W. Koo, S. Y. Lee, G. H. Kim*, W. H. Jeong*, H. J. Kim*

We introduce high-performance IZO thin films for use in TFTs andeventually for AMOLED operation. Spin-coated and annealed IZO thinfilms via sol-gel processing showed carbon-free and robust film
properties. TFTs using these films exhibited n-channel characteristics
with a field-effect mobility of 6.57 cm2V-1s-1, which is enough for
AMOLED driving.
AMD8 - 3
15:40

Solution Processed IGZO-TFTs with Various Gate
Insulator Layers Applied to Active Matrix LCD
Y.-C. Lai, C.-C. Yu, F.-W. Chang, L.-Y. Lin, M.-C. Wang,
H.-H. Gu, C.-Y. Huang, C.-C. Hsu, S.-C. Liu, Y.-H. Lai,
S.-H. Lai, S.-C. Chiang, S. Meyers*, J. Anderson*,A. Grenville*, D. Keszler**Taiwan TFT-LCD Assn., Taiwan*
Inpria, USA**
Oregon State Univ., USA

IGZO-TFTs with various gate insulators are fabricated via aqueous
solution processing. The electrical stability and effect of illumination on
IGZO-TFT devices is also investigated. In addition, a 4.1 inch QVGAAM-LCD driven by IGZO-TFTs is successfully demonstrated.
AMD8 - 4

Withdrawn

Author Interviews
16:20 – 17:20

Supporting Organization:
Thin Film Materials & Devices Meeting
65

AMD

Samsung Advanced Inst. of Tech., Korea*
Yonsei Univ., Korea

Wednesday

December 9

Workshop on FPD Manufacturing,
Materials and Components
Wednesday, December 9
13:20 - 14:55

TENJU

FMC1: Manufacturing Technologies I
Chair:
Co-Chair:J. Koike, Tohoku Univ., JapanY. Ukai, UDDI, Japan

FMC1 - 1
13:20

Low-Temperature Growth of Si Film on YttriaStabilized Zirconia Stimulation Layer
S. H. Herman, T. Akahori, S. Horita
JAIST, Japan

Poly-Si film was deposited directly on YSZ layer at 430 °C. However, thesurface is relatively rough and Zr diffusion were found near the Si/YSZ
interface. To solve these problems, solid phase crystallization of Si on
YSZ was investigated. YSZ layer was found to be effective in both
crystallization methods.
FMC1 - 2:
13:40

Invited Optimization of Source-Drain Contact Processwith Cu-Mn Alloys
J. Koike, M. Sano, K. Hirota, Y. Sutou, K. Neishi
Tohoku Univ., Japan

Cu-Mn alloy was deposited as a source-drain electrode on plasmaoxidized amorphous Si substrates. The oxidation conditions were
optimized successfully to obtain a good diffusion barrier property,
adhesion strength, and Ohmic contact.
FMC1 - 3:
14:00

Invited ZnO Thin Films Prepared by Plasma-Assisted
Atomic Layer Deposition as an Active Channel Layer
for Bottom-Gate TFT
N. Hattori, K. Murata, N. Miyatake, Y. Kawamura*,
Y. Uraoka*
Mitsui Eng. & Shipbuilding, Japan*Nara Inst. of S&T, Japan

In this study, we deposited ZnO thin film with PA-ALD as a TFT. We
obtained highly-resistive ZnO films, being suitable for the active layer of
the TFT at low deposition temperature. Radical oxygen contributes toreduce residual career concentration.

66

Wednesday
FMC1 - 4
14:20

December 9
TFT-LCD Panel by Using Soda-Lime Glass
S. W. Chu, I. Yeh, J. N. Yeh, C. Y. Tu, H. W. Fan,
J. J. Lee, P. F. Yu, W. C. Tsai, C. H. Chen
AU Optronics, Taiwan

Soda-lime glass with a lower material cost attracts its application in TFT
LCD display. We has successfully demonstrated SLG, with a suitablebarrier applied in both of array and color filter side, possibly
manufactured in current standard process. This panel also passed 1000
hr THB and TST reliability test.
FMC1 - 5L
14:40

Crystallinity of Microcrystalline Silicon (µc-Si)
Deposited by ICP-CVD with Bipolar Pulse Substrate
Bias
M. Furuta, T. Hiramatsu, H. Furuta, T. Hirao
Kochi Univ. of Tech., Japan

Microcrystalline silicon films were deposited by ICP-CVD with low
frequency bipolar pulsed substrate bias.By applying the pulse bias tothe substrate, crystallinity of the films considerably improved. The pulse
substrate bias technique will be useful to improve µc-Si crystallinity forlarge-area electronics.
----- Break -----

FMC

15:00 - 16:20

TENJU

FMC2: Manufacturing Technologies II
Chair:
Co-Chair:
FMC2 - 1:
15:00

T. Strutz, AKT, USA
K. Dantani, ATMI Japan, Japan
Invited Large Area Black/White Bistable CholestericLiquid Crystal Display and the Thermal-Addressing
SystemP.-W. Liu, C.-C. Tsai, C.-H. Lee, W.-H. Huang,
C.-W. Chen, C.-Y. Wang, K.- C. Lee
ITRI, Taiwan

A large area black/white bistable cholesteric liquid crystal display was
made by a roll to roll process and the display area is 20cm X 100cm.
The blended ChLC droplets with different wavelengths and black nanopigment was used in the display. This panel was written by a thermaladdressing system with high resolution and low cost.

67

Wednesday
FMC2 - 2:
15:20

December 9

Invited Microbubble Effects in Dispense Trains
G. Tom, W. Liu
ATMI, USA

Bubbles in the dispensing system change the compressibility of the fluidin the pump. The time to reach equilibrium flow and the dispense
volume accuracy are affected by the microbubbles, potentially resulting
in non-uniform coating on the displays. A strategy to limit bubbles indispense pump systems is presented.
FMC2 - 3
15:40

Novel RF Based Endpoint Detection for RPS Based
CVD Chamber Cleaning
T. Strutz, T. Kitamura*, P. Lee*, T. Kiyotake, T. Turner**,
E. Lu**, J. Cannon**
AKT, Japan*
Appl. Materials, USA**Forth-Rite Tech., USA

Monitoring of RF parameters of a localized plasma maintained in theexhaust line allows the identification of endpoint for PECVD chambercleaning. The performance has been investigated for chamber cleaning
after TFT and TEOS oxide depositions in an industrial type AKT CVD
tool as used in display and solar industry.
FMC2 - 4
16:00

Low Cost LTPS Manufacturing Process with HighControllability Using Half Exposure Technology
Y. Nakashima, H. Sera, T. Miyata, T. Umeno, T. Iwashita,
T. Matsumoto
Seiko Epson, JapanThe high cost of LTPS TFTs is due to a complicated structure and, thus,
a complex manufacturing process. To overcome this problem, wedeveloped half exposure technology to reduce the photolithography
steps, which account for the majority of the production cost.
----- Break -----

Call for Papers

Special Section
on Electronic Displays
IEICE Transactions on Electronics
Submission Deadline: Feb. 26, 2010
http://ny7084.rie.shizuoka.ac.jp/eid/top-e.htm
68Wednesday

December 9

16:40 - 18:00

TENJU

FMC3: Environmental Friendly Technologies
Chair:
Co-Chair:
FMC3 - 1:
16:40

R. Yamaguchi, Akita Univ., JapanT. Fujita, Univ. of Tokyo, Japan
Invited Processing of Discarded Liquid Crystal
Display for Recycling
T. Fujita, G. Dodbiba
Univ. of Tokyo, Japan

Two kinds of flow sheets for recycling of LCD have been proposed. The
electrical disintegration of LCD under water is effective to sprit the two
glasses at one time. If the LCD was crushed and incinerated, thevaporization method with chloride is effective for recovering ITO.
FMC3 - 2:
17:00

Invited Business Model for Sustainable Society by
Recycling Resources System
M. Namura, M. Kohno
DOWA HOLDINGS, Japan

FMC3 - 3:
17:20

Invited Extraction of Lead from CRT Glass in
Discarded TV Sets
T. Akai, H. Miyoshi, D. Chen*, M. Yamashita
AIST, Japan*Shanghai Inst. of Optics and Mechanics, China

We present a method for the extraction of lead from cathode ray tube
glass, utilizing subcritical water. Lead in the glass can be removed byhydrothermal treatment followed by acid leaching. We also review otheralternative methods to extract heavy metals, considering their practicalfeasibilities.
FMC3 - 4
17:40

Recycling Technology for Resist Stripper Ethylene
Carbonate to Decrease the Environmental Load
H. Ota, H. Otsubo, M. Yanagi, Y. Kamimoto*, H. Fujii*
Nomura Micro Sci., Japan*Kanagawa Ind. Tech. Ctr., JapanThe technology was examined to reuse “Ethylene Carbonate”, astripper for photo resist, by adding ozone gas and decomposing
dissolved photo resist in the “Ethylene Carbonate”. By using thistechnology for stripping photo resists, it is possible reduce theenvironmental load compared to the amine system stripper used today.
69

FMC

The earth on which we live is in facing issues of global warming,
depletion of natural resources and destruction of the environment.
DOWA suggests one of solution to realize sustainable society byrecycling resources system using renewal concept from establishednonferrous smelting techniques.

Thursday

December 10
Thursday, December 10

9:00 - 12:00

3F Foyer

Poster FMCp: FPD Manufacturing, Materials &Components
FMCp - 1

Effect of Processing Variables on the Growth
Behavior of Impurity-Doped GxZO Thin Films by DCMagnetron Sputtering Method
K.-H. Seo, C.-W. Kim, Y.-W. Yoo, M. Park, K.-N. Lim,
S.-J. Yu
LG Display, Korea

In the present study, impurities doped GxZO thin films were prepared by
dc-magnetron sputtering on glass substrate and effect of processing
variables on the growth behavior was investigated.
FMCp - 2

Local Deposition of SiOx Using an AtmosphericPressure Microplasma Jet from a Tetraetoxysilane
for a Gate Dielectric Layer of ZnO Thin-Film
Transistors
T. Pang, Y. Ding, J. Jie, H. Jia*, H. Shirai
Saitama Univ., Japan*AIST, Japan

Local deposition of SiOx was studied using an atmospheric-pressure
microplasma jet (AP-MPJ) from a tetraethoxysilane ((Si(OC2H5)4),TEOS) and O2 mixture. Bottom-gated sputtered-ZnO thin-film
transistors with a AP-MPJ SiOx as a gated dielectric layer exhibited
relatively high mobility of 24 cm2·V-1s-1, threshold voltage of 14 V andon/off current ratio of ~104.
FMCp - 3

Characterization of AZOY Films Deposited at Room
Temperature by RF Magnetron Sputtering
Y.-Y. Chen, R.-C. Chang*, C.-H. Yang, C.-C. Chang**
Tatung Univ., Taiwan*St. John’s Univ., Taiwan**Chunghwa Picture Tubes, Taiwan

AZOY films were deposited on glass and PET substrates at room
temperature by RF magnetron sputtering, and then their optical,
electrical, structural, and mechanical properties were measured todetermine an optimal sputtering power.

70

Thursday
FMCp - 4

December 10
Surface Morphology and Reliability Evaluation of
Insulating Films on Stainless Steel Foil
N. Yamada, T. Ogura, S. Ito, Y. Kubo
Nippon Steel, Japan

We have developed three kinds of insulating films, i.e., HT, MT and HP.
HT showed high heat-resistance. MT had a high resistance against
cracks. HP showed an excellent planarization ability and negligibly
small amount of moisture uptake under the conditions of 85%RH at
85°C.
FMCp - 5

Optical Properties Dependence of After-Rubbing
Cleaning Process Conditions in TFT-LCD
F. G. Xu*,**, L. B. Mao*,**, I. Yang**, Y. W. Chiu*,**,
D. C. Chung*,***Inst. of Jiangsu (IVO) FPD Tech. & Res., China**InfoVision OptoElect., China

The purpose of the research is to investigate the effect on opticalproperties from After Rubbing Cleaning (ARC) oven in TFT LCD
processing. These information are used as guidelines to define theappropriate parameters for manufacturing process.
FMCp - 6

M. Ogura, T. Ikoma, S. Harada, K. Shimamura, N. White*
Mitsui Eng. & Shipbuilding, Japan*ALBION, USA
We developed a novel ion implanter with low cost of ownership such as
maintenance, floor space and weight, by using new beam-line.
Productivity of the ion implanter is 40% higher than that of previous
model.
FMCp - 7
FMCp - 8

Withdrawn
Simulation Modeling of TFT-LCD Color Filter Fab
J. C. Chen, P. B. Huang, C.-J. Sun, K.-J. Chao,
G. C. Chao, J.-W. Chien, C.-C. Chen*, C.-N. Mo*,
T.-W. Peng*, Y.-Y. Wei*, C.-H. Feng*, Y.-C. Liu*,
M.-T. Chiang*
Chung-Yuan Christian Univ., Taiwan*Chunghwa Picture Tubes, Taiwan

This paper developed an AutoMod simulation model and conductedvalidation analysis for a real-world TFT-LCD Color Filter Fab. Based on
the simulation model with animation, decision makers can conduct
what-if analysis for the selection of order assignment and lot release
alternatives.
71

FMC

Development of High Productivity Ion Implanter
MAGIC-i for Flat Panel Displays

Thursday
FMCp - 9

December 10
Design and Implementation High Coupling
Apparatus between LED and Light Guide
C.-W. Su, T.-Y. Li, C.-C. Chang
Chunghwa Picture Tubes, Taiwan

We have designed high coupling apparatus between LED and lightguide which is called T-type coupling. The structure of the T-typeapparatus is very simple and the fabrication process more cost down.
The high reflective-coupling apparatus can enhance optical efficiency,
and then solve bright line question and thermal problem.
FMCp - 10

Withdrawn

FMCp - 11

Withdrawn

FMCp - 12

Integrated Light-Guided Plates (LGPs) with
Optimized Pyramid-Like Microstructures
Y.-Y. Chang, W.-H. Yang, H.-C. Yeh, C.-J. Ting, H.-H. Lin,
J.-H. Tsai
ITRI, Taiwan

The illumination angle of LGPs is controlled by optimized pyramid-likemicrostructures, which can be fabricated by anisotropic etching
technology with a tilted (100)-oriented silicon wafer. High on-axis
brightness is achieved without using brightness enhancement films.
FMCp - 13

Characteristics of Microlens Array Optical Sheetswith Apertures
S. H. Baek, S. K. Hwang, G. Park, J. S. Gwag,
J. H. Kwon, W. T. Moon*, S. H. Kim*, B. K. Kim*,
S.-H. Kang*, Y. S. Park**
Yeungnam Univ., Korea*LG Display, Korea**ADMRC, Kyungbook Nat. Univ., Korea

Optical sheets with microlens array and cone array with apertures arefabricated by the diffuse lithography. The simulation showed that the
optical sheets with apertures have normal luminance compatible withthe dual crossed prism sheets.
FMCp - 1472

Withdrawn

Thursday
FMCp - 15

December 10
Practical Model to Analyze the Characteristics of
CCFL for Backlighting
K. Misono
Tsuruoka Nat. College of Tech., Japan

We have developed a practical model to analyze the characteristics of
CCFL for backlighting. This model predicts the energy balance and theradiation efficiency of 254(nm) with the accuracy of 10% or better for
given design parameters. The design parameters to improve theradiation efficiency over 30% are obtained.
FMCp - 16

An Efficient Thermal Stress Estimation Using Block
Adaptive Filtering
M.-L. Tai, P.-C. Chien
Chunghwa Picture Tubes, Taiwan

We had proposed fast thermal stress estimation methodology for thecomponents on FPD electronic system board within specific ambient
temperature. Now, we will propose one more efficient estimation
methodology for the FPD electronic system board.
FMCp - 17

Simulation Study of the Edge-Lit Backlight Unit for
LCD Monitor Applications

FMC

J. H. Lee, Y. H. Ju, K.-B. Nahm, J.-H. Ko, J. H. Kim*
Hallym Univ., Korea*Samsung Elect., Korea
A simple edge-lit backlight model for LCD monitor was studied using a
ray-trace technique. The obtained simulation results were comparedwith those from experiments carried out on the 17-inch edge-lit
backlight. The simulation technique based on a simple model may be auseful method for estimating and improving backlight performances.
FMCp - 18

Transparent PC-Based Composite Display Substrate
G. Kim, S.-M. Yoon, H. Chun*
ETRI, Korea*KITECH, Korea

Transparent polycarbonate-based composite substrate for flexible
display was developed. This composite substrate with good
processability and optical properties shows a high potential for FPDs as
a flexible display substrate.

73

Thursday
FMCp - 19

December 10
Development of a Low Thermal Shrinkage Glass
Substrate for LTPS TFT-LCD
T. Kawaguchi, Y. Kato, S. Miwa, H. Yamazaki
Nipppon Elec. Glass, JapanWe developed a low thermal shrinkage glass substrate for LTPS TFTLCD without polishing process. By optimization of forming condition in
the overflow down-draw process, we can dramatically reduce thethermal shrinkage of glass substrate. This substrate is also suitable for
OLED panel.
FMCp - 20

A Spy on Solid-State Photopolymerization: RealTime FT-IR Spectroscopy to Watch the Photoreactionof a Negative-Type Photoresist
S. C. Lee, C. Lee, K. W. Lee, S.-H. Kim, S. J. Oh
LG Chem, Korea

Real-time Fourier-transform infrared spectroscopy has been used tomonitor the photoreaction occurring in a negative-type photoresist.
Effects of the thickness of a thin film, the concentration of aphotoinitiator and the intensity of exposed ultraviolet light were
investigated.
FMCp - 21

Proposals of a Curtailed Process for Manufacturing
LC Panels with New-Type Sealants
H. Sakurai, H. Takeda, Y. Ono
DIC, Japan

We propose a novel ODF process for manufacturing LC panels withdelayed cure sealants. In the novel process, the dispensed sealant on asubstrate is irradiated by UV light before superposition of two
substrates. The nonthermal process will generate shortening a total
manufacturing time, cost reductions and accuracy improvements.
FMCp - 22

Synthesis of Fullerene/Polystyrene Composite
Nanoparticles by Emulsion Polymerizations
K.-J. Kim, S. Park, M.-H. Lee
Chonbuk Nat. Univ., Korea

Fullerene/polystyrene nanoparticles having the average size of 300 nm~ 1 µm were prepared by emulsion polymerization in aqueous medium.
The contents of fullerene in the nanoparticle were confirmed by IRspectroscopy, thermogravimetric analyses. Further characterizations of
the nanoparticles were performed by using DSL, SEM and TEM
observation.

74

Thursday

December 10

FMCp - 23

Reliability Improvement of a-Si TFT Using Low Water
Absorption Type of Photosensitive Passivation Layerwith Low Dielectric Constant
K. Sugitani, A. Tanabe, M. Hanmura, H. Ohmori, T. Katoh
ZEON, JapanWe developed low water absorption type of photoactive passivation
layer with low dielectric constant (PPLD). We identified the correlation
between the off-leakage current of a-Si TFT and the water absorption of
the passivation layers. And hydrophobizing the passivation layer iseffective in improvement the property of TFT devices.
FMCp - 24

Transfer of Graphene from HOPG to Substrates byControlling Their Surface Properties
K.-B. Kim, J. Choi
Kyung Hee Univ., Korea

We studied the transfer behavior of graphene from highly oriented
pyrolytic graphite (HOPG) to various substrates by investigating thesurface properties of the substrates for the development of transparent
conducting electrodes.
FMCp - 25

Ultrathin Nickel Metallic Layer on Glass as aTransparent Electrode

FMC

C.-M. Lee, J. Choi
Kyung Hee Univ., Korea
A very thin nickel film on glass was studied as a potential transplantelectrode, that can be utilized in future electro-optic devices such as
displays, solar cells and light emitting diodes.
FMCp - 26

Effect of Targets Used on Preparation of ImpurityDoped ZnO Transparent Electrodes by DC Magnetron
Sputtering Deposition
J. Oda, J. Nomoto, M. Konagai, H. Fukada, T. Miyata,
T. Minami
Kanazawa Inst. of Tech., Japan

In preparation of transparent conducting Al- or Ga-doped ZnO thin films
by conventional dc magnetron sputtering deposition, we investigate thekey factors in the deposition conditions that are necessary for practicaluse in transparent electrode applications. Targets optimized to deposit
thin-film transparent electrodes tend to exhibit lower oxygen content.

75Thursday

December 10

FMCp - 27

Preparation of Black Absorber Layer for CholestericLiquid Crystal Display
C.-C. Weng, I.-J. Cheng, Y.-C. Lin, K. T. Hung
ITRI, Taiwan

A novel black absorber layer for cholesteric liquid crystal display wasdisclosed. In this study we report that, the modified carbon black could
be dispersed well in water solution and the black absorber layer
presents O.D. >2.0/1µm film and the surface resistivity will increase 3orders from 105 to 108.
FMCp - 28

Withdrawn

FMCp - 29

Preparation of Negative C-Type Optical Anisotropic
Film with Embedded Positive A Layer
C.-M. Wu, M.-T. Wu, S.-Y. Lin, K.-T. Huang
ITRI, Taiwan

The present article relates to a liquid crystal composition and a method
for manufacturing the same, and in particular relates to manufacture a
positive A film-embedded negative C optically anisotropic coating
applied in a vertical alignment LCD.
FMCp - 30

Novel Coatable Negative C-Plate Retarder
A. Lazarev, A. Geivandov*, I. Kasianova*
Crysoptix, Japan*Kontrakt, Russia

Crysoptix developed guest-host lyotropic liquid crystal material for
manufacturing coatable LCD retarders. The biaxial BA-type birefringent
films (retarders) contain, as host component, supramolecules based on
Crysoptix sulfonated aromatic compound. We enhanced guest-hostsystem by NZ-factor adjusting agents that allow producing retarders
with desired optical and good mechanical properties.
FMCp - 31

A Novel High Retardation Polymer Film for Liquid
Crystal Displays
D. Kobayashi*,**, A. Tagaya*,**, Y. Koike*,***Keio Univ., Japan**

ERATO-SORST/JST, JapanThe high retardation polymer film (HRPF) device for liquid crystal
displays using the interference color was proposed. The HRPF was
prepared by uniaxially heat drawing polycarbonate. Consequently, theinterference color through polycarbonate films which had retardation
more than 8000 nm exhibited a similar spectrum to that of the lightsource.

76

Thursday
FMCp - 32

December 10
Optical Performance of Polarizer Varied with Time
M. Lee, Y.-L. Cheng, L.-C. Ling, C.-J. Chang, P.-H. Kuo,
H.-T. Li, C.-S. Chen
Chunghwa Picture Tubes, Taiwan

Polarizer is made of several films laminated together by special
adhesive. Recently, we placed LCD for a period of time .However, theresults of LCD’s contrast and view angle were getting worse .We
eventually found the poor absorbent of polarizer is main reason.
FMCp - 33

Large Size of Multi-Touch Projected Capacitive
Touch Panel
M.-T. Hsieh, C.-M. Lin, H.-F. Yin, C.-C. Chen, H.-A. Li,
C.-N. Moon
Chunghwa Picture Tubes, Taiwan

The projected capacitive multi-touch panel for large size in 10.1 inch
has been developed successfully. It includes 26 x-traces with 16 ytraces also over 90% of transmittance and support multi-touch function.
This suitable apply in netbook, notebook or MID etc.
Withdrawn

FMCp - 35

Optimizating Etching Parameters in High Density
Plasma Etcher with Planar Coil

FMC

FMCp - 34

C. Wei, Y.-H. Chen*, Y.-H. Chien
Tatung Univ., Taiwan
AU Optronics, Taiwan*

The high density plasma etcher is widely used in flat panel display. The
planar coil configuration (N-slot) has the advantage of less footprint andmore economical. This study investigates the etch conditions of SiOx
with Taguchi method. A high etching rate and good uniformity isachieved with this approach.
FMCp - 36L

Enhanced Cell Filling Efficiency with Plasma TreatedFlexible PET Cells Using a Roller-Pressing Technique
W.-T. Wu, C.-C. Liu, C.-M. Hsu, C.-C. Li*
Southern Taiwan Univ., Taiwan*ITRI, Taiwan

A roller-pressing unit was employed to laminate plasma treated PET
films and fill cholesteric liquid crystal into flexible cells in atmosphere.
The plasma treatment enhanced the cell filling efficiency by a factor of 8with the maximum speed of 40mm/s. This approach can potentially be
integrated into a roll-to-roll system.

77Thursday

December 10

FMCp - 37L

Manufacturing Method of New Optical Films for LCDs
T. Yosomiya, K. Watanabe
Dai Nippon Printing, Japan

We have been developing retardation-controlled polypropylene-based
films. The Re value (in-plane retardation) of the new optical films madeby water-cooling inflation extrusion is less than 10nm. These opticalproperties show high durability under accelerated conditions. The low
Re value film can be used for protection films of LCD’s polarizer.
FMCp - 38L

PVA Polarizers Laminated with PET
A. Geivandov, P. Lazarev
Crysoptix, Japan

Conventional PET film (+A plate) when coated with Crysoptix Thin
Birefringent Film TBF retarder can efficiently replace TAC substrate in
LCD polarizer. New polarizer design for VA LCD and IPS LCD provides
over 3 B USD cost reduction and improves durability.
FMCp - 39L

Enhancement of Film-Compensated Twisted Nematic
LCD by Using Cholesteric LC Retarder
P.-J. Hsieh, H.-L. Kuo
ITRI, Taiwan

Viewing angle of conventional film-compensated TN-LCD is greatly
improved by a new optically compensated design. Simply a pair ofadditional cholesteric liquid crystal retarders is used in our design togive very high contrast ratio even over 70 degree viewing angle.
Detailed optical modeling results are presented here.
FMCp - 40L

Growth of Polycrystalline Si Film on Polycarbonate
Substrate Prepared by Conventional Laser Annealing
N. Kawamoto, Y. Ono*, T. Hanta, T. Imamura*, T. Miyishi
Yamaguchi Univ., Japan*Teijin, Japan

This is the first report on growth of the poly-Si film on the polycarbonate
substrate (PC) by conventional laser annealing. The grain size poly-Si
grain on the PC was approximately 70 nm. We discuss the relationshipbetween the damage of poly-Si film and the thermal property of thepolymer.

78Thursday

December 10

FMCp - 41L

Large-Grained Poly-Si Film Fabricated by Ni-SPC and
Laser Recrystallization
A. Hara, T. Sato, T. Sato
Tohoku Gakuin Univ., Japan

A novel poly-Si substrate for SoG was designed by the selective
fabrication of a large-grained poly-Si film in a Ni-SPC poly-Si film. The
behavior of the Ni impurities was evaluated; it was found that Ni
impurities stabilized by forming NiSi2 at the triple junctions during lowtemperature poly-Si TFT processes.
FMCp - 42L

Optimum HTM (Half Tone Mask) Design Guide
Applied by A-Si Gate Driver Circuit
S. Choi, K. Kim, Y. Song, G. Hui, W. Lee, L. Huangfu,
J. Lee
BOE OptoElect. Tech., China

Optimum HTM (Half Tone Mask) design applied by a-Si gate drivercircuit had been established by simulation and experiments. We foundthat the transmittance of HTM was influenced by TFT channel length,
size and shape. We proposed HTM design factor to improve process
defects of TFTs in a-Si gate driver circuit area.
FMCp - 43L

FMC

Influence of Hydrogen Annealing on Low
Temperature (≤ 200 °C) Silicon Nitride Films for
Display Devices
K.-M. Lee, J.-D. Hwang, Y.-J. Lee, K.-S. No, W.-S. Hong
Univ. of Seoul, Korea

The influence of hydrogen annealing on dielectric silicon nitride film andsilicon nanocrystals embedded in silicon nitride film was investigated.
These films were prepared by catalytic chemical vapor deposition
technique at substrate temperatures below 200 °C. The optical andelectrical properties of these films were improved by hydrogenannealing.
15:00 - 16:20

TENGYOKU

FMC4: Materials I
Chair:
Co-Chair:
FMC4 - 1:
15:00

Pi.-C. Yeh , AU Optronic, Taiwan
T. Unate, Sekisui Chem., Japan
Invited Development of ITO Ink for Ink-Jet Printing:
Evaluation of the Novel Ink
O. Yamamoto
Akita Univ., JapanThe ITO (Indium tin oxide) ink suitable to an ink-jet printing could be
prepared successfully through an ozone treatment of the ethanol
solution containing metal chlorides, which may give a high effective forfabricating displays and solar cells.
79Thursday
FMC4 - 2
15:20

December 10
Al/Ag/Al Thin Films Prepared by Sputtering for TFT
Electrodes
M. Kawamura, Y. Inami, Y. Abe, K. Sasaki
Kitami Inst. of Tech., JapanAs a new material for TFT electrodes, modified Ag thin films (Al/Ag/Al
films) were prepared by sputtering. By characterizations of the films
before and after annealing, morphological stability, low electricalresistivity and ohmic contact with ITO films were confirmed.
FMC4 - 3
15:40

Fabrication of 15-in. XGA IPS Panel with Ga DopedZnO Pixel ElectrodeB. G. Choi, J. Kim, J. Lim*, S. J. Lee*, J. Bang*, K. Park,
C.-D. Kim, Y. K. Hwang, I.-J. Chung
LG Display, Korea*LG Chem, Korea

Ga doped ZnO was used for transparent electrode of 15.0” XGA IPSAMLCD panel. The Ga concentration was determined to achieve low
resistivity and high carrier concentration. Pixel patterning was
conducted by using citric acid and the panel shows similar image quality
to the panel with ITO electrode.
FMC4 - 4
16:00

Transmissive Low Outgassing Constructional
Material for Organic Light Emitting Display
T. Natsume, M. Hanmura, H. Ohmori, T. Katoh
ZEON, JapanFor Organic Light Emitting Display (OLED), we developed Transmissive
Low Outgassing Constructional Material (TLOC). TLOC has the highadhesion, the low outgassing characteristic, and the high transparency.
For the characteristics, TLOC can be used as both planarization layers
and partition walls for bottom-emission Active Matrix OLEDs (AMOLED).
----- Break -----

16:40 - 18:00

TENGYOKU

FMC5: Materials II
Chair:
Co-Chair:80

X. Chu, Vitex Sys., USA
K. Miyazawa, Chisso, JapanThursday
FMC5 - 1:
16:40

December 10
Invited LC Alignment Control Using Reactive
Mesogen Mixed with Alignment Layers
Y.-J. Lee, Y.-K. Kim, S. I. Jo, C.-J. Yu, J.-H. Kim
Hanyang Univ., Korea

We proposed a new method for controlling alignment and orientation ofliquid crystal molecules through surface modification using UV curable
reactive mesogen mixed with alignment layers for high display
performances.
FMC5 - 2
17:00

Alignment Properties of Reactive Liquid Crystals
Affected by the Characteristics of a Rubbed
Polyimide Film
P.-C. Yeh, C.-W. Chen, C.-H. Shih, W.-M. Huang
AU Optronics, Taiwan

Alignment properties of reactive liquid crystals affected by thecharacteristics of a rubbed polyimide are discussed. The density ofrubbed grooves of alignment layers is the key factor to influence thealignment of reactive liquid crystal.
FMC5 - 3
17:20

A Simple Correction to Thin Panel Strength Valuefrom 4-Point Bend Test

FMC

T. Ono, G. Pai*, S. Gulati**
Corning Tech. Ctr., Japan*Corning Display Tech., Taiwan**
Corning, USA
Panel strength value converted from failure load measured by abending test might be significantly lower than actual strength if theconverting equation is inappropriate. This paper describes a simple
method to correct the strength value.
FMC5 - 4
17:40

Properties of Silplus Films Constructed from
Organic-Inorganic Hybrid Materials, Containing
Cage-Type Silsesquioxane Structures
T. Saito, T. Morimoto, M. Isozaki, H. Ando, K. Hayashi
Nippon Steel Chem., Japan

Silplus, new organic-inorganic hybrid materials containing cage-typesilsesquioxane structures, possess several unique properties in optical,
thermal, and mechanical. Silplus films have potential to be applied to
substrates of flexible displays for its high heat resistance, transparency,
and low-birefringence.

Author Interviews
18:00 – 19:00

81

Friday

December 11
Friday, December 11

9:00 - 10:20

TENJU

FMC6: Backlight I
Chair:
Co-Chair:D. den Engelsen, Brunel Univ., UK
Y. Yang, Sony, Japan

FMC6 - 1
9:00

Does a Field Emission Backlight Make Sense?
D. den Engelsen, J. Silver, R. Withnall, T. G. Ireland,
P. G. Harris
Brunel Univ., UK

We review the principles for maximizing lumen efficacy and luminanceof field emission backlights with diode and triode emitter structures. In
order to suppress phosphor saturation it is recommended that the fieldemission backlight is driven at least two times faster than the LC-panel;
so either at 120 or 240Hz.
FMC6 - 2
9:20

Optical Design for an Ultra-Thin, LED Based, 2D
Dimmable Backlight
E. Onac, S. Bierhuizen*, G. Eng*
Philips Res. Eindhoven, the Netherlands*
Philips Lumileds Lighting, USA

A novel architecture for realizing thin, 2D dimmable backlights is
introduced. Light emitting diodes (LEDs) are distributed over the
backlight surface and can be individually controlled to illuminate
different areas of the display. Mixing light from more LEDs makes thesystem robust against differences in LED efficiencies and color points.
FMC6 - 3
9:40

Ultra Thin LED Backlight System Using Tandem Light
Guides for Large-Size LCD-TV
T. Masuda, Y. Ajichi, T. Kubo, T. Yamamoto,T. Shinomiya, M. Nakamura, T. Shimizu, N. Kasai,
H. Mouri, X.-F. Feng*, M. Teragawa
Sharp, Japan*Sharp Labs. of America, USA

We developed an ultra thin RGB-LED backlight system for 52” and 65”
LCD-TV. It is constructed by pairs of RGB-LED and a tandem light guide(TLG). In this paper, we describe novel improvements of the TLG,
correction of device-to-device variations of RGB-LED, andadequateness for local dimming techniques.

82

Friday
FMC6 - 4
10:00

December 11
Short-Afterglow CCFL for Blinking Backlight
T. Igarashi, T. Kusunoki
Sony, Japan

A novel CCFL backlight-unit with a short afterglow has been developed,
which improves image quality under blinking operation. The backlight
unit consists of CCFLs with only blue- and red-emitting phosphors incombination with a green-emitting diffuser plate.
----- Break -----

10:40 - 12:20

TENJU

FMC7: Backlight II
Chair:
Co-Chair:

K. Käläntär, Nipponleiz, Japan
M. Shinohara, Omron, Japan

FMC7 - 1
10:40

Colour Separation Module Realized by Roll-to-Roll
Imprinting for Green TFT-LCD
C.-H. Lee, H. H Lin, C.-H. Liao
ITRI, Taiwan

FMC7 - 2
11:00

Micro-Blazed Grating Fabricated by Roll-to-Roll
Imprinting for LCD Applications
C.-H. Lee, H.-H. Lin, C.-H. Liao
ITRI, Taiwan

A blazed grating with a period of 4µm was fabricated by the roll-to-roll
imprinting to split colour. Its process challenging parameters, including
the control of temperature variation, the diamond tool’s lifetime, the UV
exposure energy and the UV resin’s feeding rate.
FMC7 - 3
11:20

A Novel LCD Using a High Definition Scattering Film
T. Saruta*,**, A. Tagaya*,**, Y. Koike*,***Keio Univ., Japan**ERATO-SORST/JST, Japan

We proposed a novel liquid crystal display (LCD) using a high definition
scattering film and a directional backlight. The novel LCD showed theequivalent luminance properties to those of a commercial one withsimple structure without using precisely controlled phase difference
films.

83

FMC

A colour separation module consists of an aspheric lens array and ablazed grating was fabricated by the roll-to-roll imprinting to replace thedye colour filter. Its measured transmission efficiency was three times
more than that of conventional colour filter.

Friday
FMC7 - 4
11:40

December 11
Micro-Lens Array Formation by Offset Printing
A. Kishioka, S. Sekiguchi, T. Sugita, S. Komura*,
M. Sasaki*
Hitachi, Japan*Hitachi Displays, JapanA new MLA formation technology on LCDs by offset printing has been
described. We fabricated a VGA transmissive LCD combining the MLA
formed by this technology and a collimated backlight. The LCD offers
2.4 times higher on-axis luminance as that of a conventional device andwas suitable for mobile displays.
FMC7 - 5
12:00

Design and Fabrication of a Multifunctional Light
Guide Plate for LCDs
K. Kim, M. Kubota, K. Nakatsuka
Sumitomo Chems., JapanWe developed a two step design method that optimizes angular rangeof output light and polarization splitting ratio separately. Using thismethod, we designed and fabricated multifunctional light guide plate
which integrates various optical functions together. Opticalcharacteristics of the fabricated multifunctional light guide were close to
the design targets.
----- Lunch -----

13:20 - 14:55

TENJU

FMC8: Optical Films I
Chair:
Co-Chair:Y. Iimura, Tokyo Univ. of A&T, Japan
H. Yoshimi, Nitto Denko, Japan

FMC8 - 1
13:20

New Clear-AR Film by Wetting Process Suitable for
Surface Film of Large Size LCD-TVs
T. Oikawa, K. Inoue, T. Suzuki, Y. Mitsumori, S. Yasuda,
Y. Suga, K. Mihayashi
FUJIFILM, Japan

We have succeeded in the development of a new surface film “NewClear-AR-Film” having AR-multi-layers by wetting process, that shows
both low reflectance (≦0.5％) and color neutrality of reflected light. This
excellent optical characteristic has been realized by unique multi layers
optical design.

84

Friday
FMC8 - 2
13:40

December 11
Micropillar Array Hybrid Antireflection Structure forPrevention of Newton’s Rings in Mobile Displays
K. Sanari, T. Minobe, Y. Takagi, Y. Yamamoto, Y. Ito
OMRON, JapanTo prevent the formation of Newton’s rings between mobile displays andtransparent covers, we developed a micropillar array hybrid
antireflection structure (ARS). The micropillar (height 2.5 µm, diameter5 µm) is arranged on the ARS surface. Newton’s rings weresuccessfully prevented with only a slight change in the reflectance.
FMC8 - 3
14:00

Novel Nano-Scale Multi-Layered Compensation Filmfor IPS-LCDs
Y. Ono, A. Uchiyama, S. Kitazawa, J. Matsuo ,T. Shiro
Teijin, Japan

We have developed a novel Z-plate compensation film with nano-scale
multi-layered structure. The optically biaxial characteristics (nx>nz>ny)of this Z-plate are controlled by the combination of the form
birefringence and the molecular orientation birefringence. This Z-plate
exhibits some superior properties as a compensation film for IPS-LCDs.
FMC8 - 4
14:20

Manufacturing of Coatable Guest-Host Retarder for
LCD

FMC

A. Geivandov, E. Kharatiyan*, A. Lazarev, P. Lazarev
Crysoptix, Japan*Kontrakt, Russia

Crysoptix developed a guest-host lyotropic liquid crystal material for
manufacturing coatable LCD retarders. The biaxial BA-type birefringent
films (retarders) contain, as a host component, supramolecules basedon Crysoptix sulfonated aromatic compound. We enhanced guest-hostsystem by NZ-factor adjusting agents that allow producing retarders
with desired optical and good mechanical properties.
FMC8 - 5L
14:40

Large-Area Seamless Motheye Films by Roll-to-Roll
Process
S. Endoh, O. Shigehisa, K. Hayashibe, H. Tazawa,S. Kajiya, H. Takahashi
Sony, Japan

We’ve developed seamless large-area nanoimprint display films by rollto-roll manufacturing process. Fabricating Motheye nano-structures on
the display film, we can reduce the residual reflectance to 0.04% or
less. By forming such structures on 3-faces of display panel
components, we’ve obtained quite low glare device whosetransmittance is increased by 12%.
----- Break -----

85

Friday

December 11

15:00 - 16:20

TENJU

FMC9: Optical Films II
Chair:
Co-Chair:T. Miyashita, Tohoku Univ., JapanT. Uchiyama, Teijin, Japan

FMC9 - 1
15:00

Large Area Fabrication of Periodic Microstructures
Using “Nano-Buckling System”
T. Okayasu, Y. Mori, K. Muto, C. Yoshimura, Y. Nishikori
Oji Paper, Japan

Combination of a top layer and a heat shrinkable film enabled to form
periodic microstructures on the surface of the top layer over a large
area. The length scale of the structures produced by this technologythat we named “Nano-buckling” ranges from 50nm to 10,000nm.
FMC9 - 2
15:20

The Performances of Collimated Backlight and Front
Diffusing Systems about Several LC Modes
H. Takemoto, T. Fuchida, S. Shutou, M. Miyatake
Nitto Denko, Japan

We compared the effects of enhancing contrast ratio by the collimatedbacklight and front diffusing systems on several LC modes. We
composed the display system using conventional optical components
and confirmed the benefits of the system. We designed target
properties of these optical components.
FMC9 - 3
15:40

Use of Polarization-Scrambling Filter for Secure
Display
H. Yamamoto, K. Kajimoto, T. Imagawa, S. Suyama
Univ. of Tokushima, Japan

We propose a new secure display that prevents eavesdropping ofdisplay signal and peeping at the secret. We have fabricated apolarization-scrambling filter, which randomly rotates polarization
angles. By utilizing the developed filter as a decoding key of opticalencryption, the viewing zone of the decoded mage is limited threedimensionally.

86Friday
FMC9 - 4
16:00

December 11
2-D Birefringence Measurement System Using
Photonic Crystal Technology
T. Kawashima, F. Laurent, H. Yoh, T. Chiba , T. Sato,
S. Kawakami
Photonic Lattice, Japan

We have developed a 2-D high-speed birefringence measurement
system having a polarization image sensor, using a 384 × 288
segmented photonic crystal waveplate array. The system can measureretardation data in 0-3000 nm range in 10 seconds.

Author Interviews
16:20 – 17:20

Supporting Organizations:
The Japan Society for Printing Science and Technology
Japan Society of Colour Material
The Technical Association of Photopolymers, Japan
Society of Photographic Science and Technology of JapanThe Society of Radtech, JapanThe Japanese Research Association of Organic Electronics Materials
Japan Electronics Packaging and Circuits Association

FMC

EXHIBITION
12:00–18:00
10:00–18:00
10:00–14:00

Wednesday, Dec. 9, 2009
Thursday, Dec. 10, 2009
Friday, Dec. 11, 2009

4F FoyerWorld Convention Center Summit
Free admission with your registration name tag.
87

Thursday

December 10

Workshop on Plasma Displays
Thursday, December 10
13:20 - 16:20

3F Foyer

Poster PDPp: Plasma Displays
PDPp - 1

Influence of an Impurity Gas on the Discharge
Characteristics of an AC PDP
Y. Kamiya, Y. Hirano*, O. Akinori**, K. Ishii*,
Y. Murakami*, H. Hiramoto
Nihon Univ., Japan
NHK, Japan** Nagoya Inst. of Tech., Japan*

We used 3-D fluid simulation to investigate the discharge characteristics
of a Ne/Xe and impurity mixture gas confined to an ultra-high-resolution
PDP. Our calculations revealed a small amount of impurity gases
increase energy transfer rates. Oxygen delays discharge by reducing
the wall-charge but hydrogen does not delay discharge so much.
PDPp - 2

Optimum Gas Mixtures for Xe Gas Excitation in a
PDP
A. Khorami, S. Ghanbari*
IRIB Univ. and Univ. of Appl. Sci., Iran
*Univ. of Essex, UKThis paper investigates Xe gas excitation efficiency through different
gas compositions. It is demonstrated that by adding He or Ar partialpressure to the Ne-Xe mixture for a given pressure of He, Ne, Xe and Ar
enhances excitation efficiency in comparison with Ne-Xe and He-Xe
mixtures.
PDPp - 3

Luminous Efficiency Increase through Uneven
Surfaces in a Microcell Discharge of PDP
A. Khorami, S. Ghanbari*, M. Mofidi**
IRIB Univ. and Univ. of Appl. Sci., Iran*
Univ. of Essex, UK**Univ. of Azad, IranIn this paper the microcell structure of plasma display panels (PDP) isinvestigated to enhance luminous efficiency. Due to the limitation inincreasing Xe partial pressure, the luminous efficiency in PDPs isrelatively low. This paper investigates the effect of an uneven surface on
the luminance efficiency without increasing breakdown voltage.

88

Thursday
PDPp - 4

December 10
Fabrication of PDP Barrier Ribs by Microtransfer
Molding using Glass Fiber Reinforced PDMS Soft
Mold and Demoldable UV Curable Paste
S. M. Ryu, D. Y. Yang, J. Y. So*, L. S. Park*
KAIST, Korea*
Kyungpook Nat. Univ., Korea

Barrier ribs for PDP were fabricated by a micro-transfer molding
process that used a soft mold and a UV curable paste. Glass fibers
were reinforced in PDMS maxtrix. Mold release agents were employedin the paste in order to demold the barrier ribs easily from the soft mold.
PDPp - 5

Moved to FMCp - 35

PDPp - 6

Electro-Optical Characteristics of Functional Layer in
AC PDP
C. G. Son, Y. G. Han, Y. H. Kim, B. S. Cho, Y. J. Hong,K. B. Song, E. H. Choi
Kwangwoon Univ., Korea

We have studied that the electro-optical characteristics of functional
layers which have different kinds of MgO sub-micrometer size powder in
AC-PDP.
PDPp - 7

Efficiency Improvement Characteristics Under
Exhaust Method and Xe Gas Contents in AC PDP
T.-J. Kweon*,**, E.-Y. Jung**, C.-S. Park*, J.-N. Heo*,
H.-D. Park*, J.-H. Kim*, H.-S. Tae*, E.-G. Heo**

PDP*Kyungpook Nat. Univ., Korea**Samsung SDI, Korea

In this paper, two experiments were performed. One is changed a Xegas content to increase luminance, the other is changed exhaust
method to decrease discharge voltage. As a result, if a Xe gas content
is increased, discharge efficiency is improved. But, discharge voltage
was increased. In order to improve this discharge voltage rise, hightemperature exhaust method was employed by raising 20°C thenconventional exhaust temperature.
PDPp - 8

Analysis of Power Reduction Effect in Applying
Adiabatic Charge Circuit to PDP Driver Circuit
W.-F. Chen, Y. Sano
Toyo Univ., Japan

Square waveform driving current has been proved being able tominimize power consumption, 81% of energy recovery circuit. Proposed
pseudo adiabatic charge circuits can reduce power consumption toabout 0.9 of conventional circuit. We analyzed the power consumption
caused by both resistance loss and discharge loss of parasitic
capacitance.
89Thursday
PDPp - 9

December 10
Improvement of Address Discharge Time-Lag with a
Positive Scan-Bias in Negative Waveform
W. H. Park, S. J. Lee, J. Y. Lee*, J. Kang
Dankook Univ., Korea*Myongji Univ., Korea

A negative waveform having inverted polarity of conventional waveform
during reset and sustain periods was proposed to improve the driving
characteristics. In order to control the negative wall-charge distribution,a positive bias voltage on the scan electrode was applied during reset
period. Compared to 0V scan-bias condition, at 8V scan-bias theformativetime lag was improved about 23.95% and the average time lag
was improved about 14.91 %.
PDPp - 10

Study on Priming Ramp Discharge of Self-Priming
Addressing Driving Scheme in AC PDPs
H. N. Kim, T. S. Kim, B. J. Shin
Sejong Univ., Korea

The self-priming addressing driving scheme could be significantly
reduced the address discharge time lag using the self priming effect. In
this study, the basic characteristics of the priming ramp discharge havebeen investigated with the various generation conditions and optimized
the self-priming driving scheme.
PDPp - 11

IR Emission Characteristics during Negative Reset
Period in HD and Full-HD Resolution PDPs
S. J. Lee, W. H. Park, J. Kang
Dankook Univ., Korea

Comparative experiments were performed with 7 inch HD and full-HD
resolution panels to improve the driving characteristics during reset
period in ac PDPs. During ramp-up period IR emissions from the weakdischarge generated by the negative waveform started earlier and morethan emissions by the conventional positive waveform.
PDPp - 12

Color Image Data Processing with Single-Memory
Group in PDPs
J.-F. Huang*, X.-N. Zhang*,**, Z.-T. Tu*, X.-L. Ding***Xi’an Jiaotong Univ., China**Tech. Ctr. of IRICO Group, China

The data processing with single-memory is proposed in PDPs. The
usage factor of memory and the time efficiency can be increased by
13% and 22%, respectively, while the number of memories is reducedby half.

90Thursday
PDPp - 13

December 10
Recent Progress in Color Plasma-Sphere Displays
C. Wedding, E. Peters, J. Guy, O. Strbik, J. Davis,
D. Wedding*
Imaging Syss. Tech., USA*Univ. of Toledo, USA

IST has achieved significant progress in color Plasma-sphere displays.
To date IST has demonstrated red, blue, and green Plasma-spheresthat produce a peak white of 1700cd/m2. Color Plasma-spheres have agood memory margin and priming. They will be used to make low costlarge area displays for digital billboards.
PDPp - 14L

Thermoluminescence Spectroscopy of Undoped
MgO Exposed to Vacuum Ultraviolet (VUV) Radiation
M. Kitagaki*,**, C. L. Wang***, K. Suesada*, Z. L. Guo***,J. Jue***, X. Y. Zhang***, C. L. Liu***, S. L. Wu***,H. Kajiyama**

Hiroshima Univ., Japan**Tateho Chem. Inds., Japan***Xi’an Jiaotong Univ., China

Thermoluminescence (TL) spectra of undoped MgO thin film exposed
to VUV radiation are measured at the temperatures between 50 and
300 K. We observe a strong red emission at 700 nm. Secondly, Using
Hoogenstraaten’s heating rate method, the activation energy of theelectron trap is estimated to be 58 meV.
16:40 - 18:00

TENJU

Chair:
Co-Chair:
PDP1 - 1:
16:40

PDP

PDP1: Novel PDPs
L. F. Weber, Consult., USA
M. Uchidoi, Panasonic, Japan
Invited Extra Large Area Film Display with Plasma
Tube Array Technology
K. Shinohe, G. Bingang, H. Hirakawa, M. Ishimoto,K. Awamoto, T. Shinoda
Shinoda Plasma, Japan
The plasma tubes array is the film display which has wonderfulcharacteristics such as emissive, ultra-thin, light-weight, flexible and low
power consumption. In this paper, the basic structure and advantagesof PTA are described. We had developed a prototype display of 3 m x 2
m screen size.

91

Thursday
PDP1 - 2
17:00

December 10
Progress on Development of Low Temperature
Processing of Low-Cost ITO-Free PDP Using SodaLime-Silica Glass Substrate
M. Samanta, A. K. Srivastava, S. Sharma, H. C Matpal,
H. K. Dwivedi
Samtel Color, India

Novel dielectric compositions with processing temperature at 510C
have been developed facilitating usage of soda-lime-silica (SLS) glass
substrate for realizing an ITO-free PDP. This opens up a possibility offabricating PDP with significant cost reduction in terms of materials andprocess over the PDP made using conventional PD-200 glass.
PDP1 - 3L
17:20

Address Characteristics and Hybrid Write- andErase-Addressing of Ultra-High-Resolution PDP
R. Mihara, T. Shiga, K. Ishii*, Y. Murakami*
Univ. of Electro-Commun., Japan*NHK, Japan

Write and erase address characteristics of the ultra-high-resolution
PDP are investigated. Gray scale expression is achieved with the hybrid
write- and erase-addressing, contiguous-subfield driving scheme. Scanpulse widths of write and erase addressing are 1.0 µs and 0.5 µs,
respectively when the data voltage is 55 V.
PDP1 - 4L: Invited Analysis of the Display Characteristics of a
17:40
Large-Screen Ultra-High-Definition PDP by a New
Plasma Array Simulation
Y. Hirano, Y. Murakami, M. Kumoi*, R. Murai*
NHK, Japan*Panasonic, Japan
We propose a new plasma array simulation method in which discharge
and circuit simulation are coupled to investigate the display
characteristics of a PDP. In this paper, we introduce the calculation
method and explain how it is used to predict the properties of a 100inch-diagonal PDP with 3840 x 2160 pixels.

Author Interviews
18:00 – 19:00

92

Friday

December 11
Friday, December 11

9:00 - 10:20

TENYO

PDP2: MgO
Chair:
Co-Chair:H. Tolner, South East Univ., China
H. Kajiyama, Hiroshima Univ., Japan

PDP2 - 1
9:00

Investigation of MgO:Al,N Films on Electron
Emission Properties
M. Nishitani*,**, Y. Morita*, M. Terauchi*, Y. Yamauchi**,K. Yoshino*, M. Sakai**, Y. Takata**, Y. Yamauchi****Osaka Univ., Japan**Panasonic, Japan***NIMS, Japan

We tried to develop the high γ material in this study with the material
surface characterization technique. Our material design concepts are toraise the top of the electron energy of the valence band, and to obtainthe surface stability by introducing Al, N into MgO.
PDP2 - 2
9:20

Discharge Property of MgO Thin Film as theProtecting Layer of PDPs
L.-Y. Chen, Y. Tanaka, A. Ide-Ektessabi
Kyoto Univ., Japan

PDP2 - 3
9:40

Analytical and Numerical Investigations of DiffusionSticking Processes in MgO Sputtering
T. Tamakoshi, M. Ikeda, S. Ho, K. Suzuki
Hitachi, Japan

A model of the diffusion-sticking processes in MgO sputtering isinvestigated. The Green function of the model is shown to have a
Cauchy-type distribution. Using this function, the net-sputter distribution
calculated numerically well reproduces the qualitative features of
sputtering erosion on MgO surface observed by AFM measurement.

93

PDP

This study focuses on the MgO protecting layer of PDPs for the
reduction in their power consumption.T MgO thin film was deposited atvarious temperatures, using IBAD, and doped with metallic elements.
The relationships between the discharge property and other propertiesare discussed.

Friday
PDP2 - 4L
10:00

December 11
Influence of Initial Size Distribution of MgO Seed
Particles on Reconstruction and Discharge
Characteristics in AC-PDPs
S.-K. Kwon, J.-K. Choi, S.-Y. Park*, C.-H. Choi*,
H.-S. Sim*, J.-S. Kwon*, J.-H. Kim*, J.-H. Lee*,
G.-S. Kim*, Y.-G. Kang*, K.-H. Park, S.-S. Han,
H.-S. Kim*
LGEARI, Korea*
LG Elect., Korea

S. K. Kwon, et al. Influence of initial size distribution of MgO seedparticles on reconstruction and discharge characteristics in AC-PDPs
were investigated. Reconstruction behavior and exaggerated grain
growth (EGG) were closely correlated with the initial size distribution of
MgO seed particles on protective layer, which strongly affect discharge
characteristics in AC-PDPs.
----- Break -----

10:40 - 12:00

TENYO

PDP3: High γ Materials
Chair:
Co-Chair:Y.-S. Kim, Hongik Univ., Korea
R. Murai, Panasonic, Japan

PDP3 - 1
10:40

Discharge Characteristics of PDPs with High γ
Protective Layer Manufactured by Using “All-inVacuum” Process
T. Yano*,**, G. Uchida**, K. Uchida*, N. Awaji**,
T. Shinoda**, H. Kajiyama***ULVAC, Japan**

Hiroshima Univ., JapanThe SrCaO-PDP is perfectly manufactured by using the “all-in-vacuum”
process without exposing a protecting layer to ambient air. The SrCaOPDP(Xe:20%) shows 2.3 times larger luminous, 1.7 times larger
luminous efficacy, and almost same discharge time-lag compared withthat of MgO-PDP(Xe:4%).

94

Friday
PDP3 - 2
11:00

December 11
Analysis of Xe Excimer Radiation in High γ AC PDP
with High Xe Contents
G. Uchida, N. Awaji, T. Akiyama*, S. Uchida**,H. Kajiyama, T. Shinoda
Hiroshima Univ., Japan*Advanced PDP Dev. Ctr., Japan**Tokyo Metropolitan Univ., Japan

We present analysis of excimer radiation in AC-PDP ignited by high γicathode such as SrCaO. Temporal behavior of excimer radiation
changes with Xe concentration, and decay time constant becomes as
fast as a few hundred nsec in Xe discharge. Experiment shows that
excimer radiation increases linearly with Xe pressure.
PDP3 - 3
11:20

Air Stable High γ Discharge Protective Layer Covered
with Barrier Material
M. Hasegawa, S. Fukuta, K. Betsui
Hitachi, Japan

We propose a double protective layer which consists of barrier layer for
deterioration and high-γ material. The high-γ material covered with theappropriate barrier layer did not deteriorate when it was handled under
air atmosphere, and PDP with the double protective layer showed low
discharge voltage characteristic.
PDP3 - 4
11:40

Discharge Properties and Chemical Stability of SrZrO
Films
Y. Fukui, Y. Honda, Y. Yamauchi, M. Okafuji, M. Sakai,
M. Nishitani, Y. Takata

SrZrO films have superior chemical stability because of having few
adsorption-sites due to their amorphous structure, and the firing voltage
is 60 V lower than that of MgO films under a discharge gas of Ne/
Xe=85/15, 60 kPa.
----- Lunch -----

SID 2010
International Symposium, Seminar and Exhibition
May 23–28, 2010
Seattle, Washington, USA
95

PDP

Panasonic, Japan

Friday

December 11

13:20 - 14:40

TENYO

PDP4: Electron Emission Mechanism
Chair:
Co-Chair:G. Oversluizen, Philips. Res. Labs., the Netherlands
Y. Murakami, NHK, Japan

PDP4 - 1
13:20

Computational Study for Designing High γ Protecting
Layer: Development of Novel γ Estimation Method
Based on Quantum Chemistry
K. Serizawa, H. Onuma, H. Kikuchi, K. Suesada*,
M. Kitagaki*, I. Yamashita, A. Suzuki, H. Tsuboi,
N. Hatakeyama, A. Endou, H. Takaba, M. Kubo,
H. Kajiyama*, A. Miyamoto
Tohoku Univ., Japan*Hiroshima Univ., JapanFor the good estimation of γXe, we additionally introduced two
reasonable characters of surface traps into the computational γ
estimation method. The estimated γ values agreed with experimental
results quantitatively and showed that larger number of trappedelectrons can increase the γ value.
PDP4 - 2

Withdrawn

PDP4 - 4L
13:40

Performance of the Efficacy Enhancement Layer
Using Nano-Particles in PDPs
S. Nagano, S.-H. Jang, J.-W. Kang, Y.-M. Yu, C.-G. Lee,
D.-H. Choe
Samsung SDI, Korea

A nano-particle layer was experimentally applied in-between theconventional dielectric layer and the MgO thin film. This remarkably
reduces the discharge current and then enhances high luminous
efficacy. Moreover, the layer significantly improves the statistical delayof address discharge by its affection on the MgO thin film growth.
PDP4 - 3
14:00

Trap Level Design of MgO Protective Layer for HighSpeed Address Discharge in AC PDPs
S. Mori, T. Kusunoki, S. Ho, T. Miyake, Y. Mikami,
M. Shiiki, K. Suzuki
Hitachi, JapanAn advanced technique for trap level design of MgO is proposed toachieve high-speed address discharge. This technique is verified using
doped MgO. Sc-doped MgO is effective for high-speed address
discharge because its density of energy states of electron emission
source is distributed widely in the effective energy region.

96

Friday
PDP4 - 5L
14:20

December 11
High-Frequency Sustain for the High Efficiency PDP
J.-P. Choi, J.-W. Kwak, K.-C. Cho, B.-N. Ahn, S.-H. Moon
LG Elect., Korea

This paper examines the high-frequency sustain-driving which canincrease efficiency by about 10%. This effect considers energy recovery
operations and display load for the real driving in PDP. Also, power
consumption is reduced by about 5% using the optimized method.
----- Break -----

15:00 - 16:20

TENYO

PDP5: Essentials of PDP Physics
Chair:
Co-Chair:
PDP5 - 1:
15:00

S. Mikoshiba, APDC, Japan
Y.-S. Kim, Hongik Univ., Korea
Invited PDP Gas Discharge Physics
K.-W. Whang, H.-Y. Jung, O. Kwon
Seoul Nat. Univ., Korea

We analyzed the discharge characteristics of high γ cathode material
PDP with 2-D computer simulation. When Xe content varies from 10%
to 30% for two secondary electron emission coefficients representing
the values of MgO and SrO, the discharge mechanisms of voltage
reduction and discharge efficacy improvement in high γ case have beenstudied in detail. The high γ case shows high secondary electron flux
near the electrode gap region.

PDP

PDP5 - 2:
15:40

Invited Progress of PDP Protective Layers
H. Kajiyama
Hiroshima Univ., JapanThe development of high γ protective layer is the urgent issue for PDP.
The band engineering approach for high γ and the electron emission
dynamics are discussed.

Author Interviews
16:20 – 17:20

Sponsor:Plasma Display Technical Meeting

97

Wednesday

December 9

Workshop on
EL Displays and Phosphors
Wednesday, December 9
13:20 - 16:20

3F Foyer

Poster PHp: Phosphors
PHp - 1

Luminescence and Compositional Analysis of
Y3Al5O12:Ce3+ Films Fabricated by Pechini-Type SolGel Deposition
J. R. Oh, E. K. Seo, Y. R. Do
Kookmin Univ., Korea

YAG:Ce (Ce3+-doped Y3Al5O12) thin film phosphors (TFPs) were
deposited using a Pechini-type sol-gel spin-coating method on sapphire
substrates to form uniform thin films that were then crystallized byannealing. This process can overcome most of the difficulties anddisadvantages that frequently occur in the alkoxide-based sol-gel
processes.
PHp - 2

Preparation of SrY2S4:Eu Phosphors by Flux-Aided
Solid-State Reaction Using Quartz Ampule
J.-H. Oh, Y.-R. Do
Kookmin Univ., Korea

Eu-doped SrY2S4 red phosphors were synthesized from SrS, Y2S3,
EuS, S and various fluxes in flux-aided solid-state reactions. SrY2S4:Eu
phosphors were calcinated in a quartz ample at 950°C for 6 hours. The
optical properties of the SrY2S4:Eu shows a red emission located at~630nm with excitation at 365nm.
PHp - 3Synthesis and Luminescence Properties of a GreenEmitting CsSrPO4:Eu2+ Phosphor for near UV LED
Excitation
D. S. Kang, H. S. Yoo, D. Y. Jeon
KAIST, Korea

Luminescence properties of a green-emitting CsSrPO4:Eu2+ phosphor
were investigated for the first time.The phosphor shows a bright green
emission under near UV excitation. The main emission wavelength was
500 nm and could be controlled by changing Eu2+ contents.

98

Wednesday
PHp - 4

December 9Synthesis of Monolith Using
Tetramethylammoniumsilicate as Matrix Doped
YAG:Ce3+ Nanophosphor with Citric Acid by
Glycothermal
H. K. Kim, B. K. Park, Y. R. Do
Kookmin Univ., Korea

YAG:Ce3+ nanophosphor was syntehsized by a glycothermal. The
reaction yielded yttrium aluminum garnet having an particle size about
34nm. A monolith was produced in a simple sol-gel process by creatinga gel. This study shows that transparent film doped with YAG:Ce3+
nanophosphor is possible when using tetramethylammoniumsilicate.
PHp - 5Synthesis of Blue Emitting BaMgAl10O17:Eu2+ Thin
Film Phosphors by Sputtering Method
D. H. Kim, J. Y. Han, D. Y. Jeon
KAIST, Korea

BaMgAl10O17 : Eu2+ (BAM) thin film phosphors deposited on sapphire
substrate by RF magnetron sputtering have been studied. We obtained
BAM thin film phosphors of good crystallinity and high luminescence via
RF sputtering, using a single multicomponent stoichiometric target.
PHp - 6

An Investigation of 3D Silica Photonic Crystal Effects
on Luminescence Properties of YVO4:Eu3+ Thin Film
PhosphorJ. Y. Han, H. S. Yoo, D. H. Kim, D. Y. Jeon
KAIST, Korea

YVO4:Eu3+ thin film has been sputtered on silica photonic crystal (PC)layers and its optical properties were investigated byphotoluminescence (PL). The enhanced PL intensity of YVO4:Eu3+ thinfilm with PC layers was obtained due to the photonic crystal band gap(PBG) and scattering by the PC layer.
Green Emissions of M-Ga2S4 :Eu2+ (M: Zn, Ca, Sr)
ThiogallatesPH

PHp - 7Y. J. Kim, J. W. Kim*, J. S. Lee
Kyonggi Univ., Korea*
GALAXIA PHOTONICS, Korea
Cathodoluminescence (CL) of divalent europium ions doped (M, M’)thiogallate (M1-XM’XGa2S4:Eu2+, M, M’: Zn, Ca, Sr) phosphors wasinvestigated. The CL spectra exhibited strong green emissions around535 - 560 nm. Their positions and the intensities depended on the ratioof M/M’.

99

Wednesday
PHp - 8December 9
Nitrido-, Oxonitrido- and Alumonitridosilicate
Phosphor Materials Extending the Structural
Boundaries
C. Hecht, M. Zeuner, W. Schnick
Univ. of Munich, Germany

This paper gives a brief overview concerning recent nitridoalumosilicate
host lattices for Eu doping with luminescent properties and theirstructural similarities. Additionally information about solid solution
experiments of SrMAlSi4N7:Eu with M = Ca, Ba and Eu are given in
more detail.
PHp - 9Cathodoluminescence of Small Particle Gd2O2S:Pr
X-ray Phosphor
J. Silver, R. Withnall, T. Ireland, G. Fern, X. Yan
Brunel Univ., UKA small particle (ca. 120 nm size) Gd2O2S:Pr x-ray phosphor has beensynthesized and its cathodoluminescence (CL) properties have been
investigated. Green and red emission lines were observed in the CL
spectra and their intensity ratio was shown to be dependent on both
Pr3+ activator concentration and firing temperature.
PHp - 10The Problems with Eu3+ Activated Red Emitting
Phosphors with Blue LEDs to Generate White Light;
Luminous Efficiency Measurements of Red Emitting
Phosphors Based on the Formula Li(EuxY1-x)(MoO4)y(WO4)2-y
R. Stone, J. Silver, R. Withnall, G. Fern
Brunel Univ., UK

Data are presented that highlight the problems of using Eu3+ red
emitting phosphors as colour convertors for blue LEDs. The drawbacks
with using such phosphors are discussed, and methods to partiallyovercome these are suggested.
PHp - 11

Ceramic-Insulating-Type EL Devices Fabricated byUsing Y2O3:Eu Nanophosphor
K. Ueda, J. Ishino, T. Miyata, T. Minami
Kanazawa Inst. of Tech., Japan

Red-emitting EL devices with a Y2O3:Eu nanophosphor emitting layer
and a thick BaTiO3 ceramic sheet insulating layer were developed. A
luminance of 21 cd/m2 was obtained in EL devices driven by acsinusoidal wave voltage at 1 kHz.

100

Wednesday
PHp - 12

December 9Blue-Emiiting Bi-Activated (La2O3-Ga2O3)
Multicomponent Oxide Phosphor and EL Device
Applications
J. Ishino, K. Sahara, H. Fukada, T. Miyata, T. Minami
Kanazawa Inst. of Tech., Japan

Blue-emitting Bi-Activated (La2O3)1-X-(Ga2O3)X multicomponent oxide
phosphor thin films were newly developed by optimizing thecomposition (Ga content) using a combinatorial rf-magnetron sputtering
deposition method. High PL intensity and luminance in blue emission
were obtained in postannealed ((La2O3)0.9-(Ga2O3)0.1):Bi phosphor
thin films and TFEL devices fabricated using postannealed((La2O3)0.85-(Ga2O3)0.15):Bi thin films, respectively.
PHp - 13

PL and EL Characteristics in Other Activator-CoDoped La2O3:Bi Phosphor Thin Films
H. Fukada, K. Sahara, J. Ishino, T. Miyata, T. Minami
Kanazawa Inst. of Tech., Japan

Photoluminescence (PL) and electroluminescence (EL) characteristics
were investigated in various activator-co-doped La2O3:Bi phosphor thinfilms prepared using a combinatorial r.f. magnetron sputtering
deposition. Multicolor emissions in PL and EL were observed from the
prepared phosphor thin films; the observed emission spectra weredependent on the kind and content of the coactivators.
PHp - 14The Study of Color Conversion Method for InorganicOrganic Hybrid Electroluminescence Devices byUsing PL Quantum Yield Measurement
T. Uchida, S. Kawamura, M. Kobayashi, T. SatohTokyo Polytech. Univ., Japan

PHp - 15

The Development of Red Emitting ZnS:Cu,Cl,Mn,TeAC Powder Electroluminescent (ACPEL) Phosphor
B. J. Park*,**, J. Y. Han*, D. Y. Jeon*, H. S. Seo**,J. T. Ahn**, D. K. Oh**
*KAIST, Korea**ETRI, Korea

ZnS:Cu,Cl,Mn,Te red powder was synthesized by wet synthesis andsealed vessel methods. The EL luminance of ZnS:Cu,Cl,Mn,Te powder
was considered with various Te concentration, and through the Raman
spectra new peaks at 121 cm-1 and 141 cm-1 related to Te aggregation
was investigated.
101

PH

We
reportanorganic
dye-dispersed
inorganic
hybridelectroluminescence (Hyb_EL) device that can emit sharp green andred spectra. The color-conversion mechanism is clarified by studying
the photoluminescence (PL) from inorganic phosphor (host) to organicdye (guest). We estimate the PL quantum efficiency of Hyb_EL by using
an integrated sphere.

Wednesday
PHp - 16

December 9
The Effects of Post-Annealing on the Crystallinity
and the Optical Properties of SrGa2S4:Eu
Nanoparticles
S. Hamaguchi, T. Yamamoto, M. Kobayashi
Waseda Univ., Japan

SrGa2S4:Eu has been recently widely studied. Annealing treatment in a
vacuum and a H2S atmosphere is used for the improvement of thecrystallinity and optical properties.
H2S annealed nanoparticles
showed better characterizations than vacuum annealed ones. Good
samples in optical property indicate also good data in crystallinity.
PHp - 17

Preparation of Perovskite-Type Stannate Phosphors
by Polymerized Complex Method
M. Shima, T. Nakamura, M. Yasukawa*, K. Ueda
Kyushu Inst. of Tech., Japan*Kochi Nat. College of Tech., Japan

Powder of an alkaline-earth stannate phosphor, CaSnO3:Tb-Mg, withperovskite-type structure was prepared by polymerized complex
method. The obtained powder consisted of small uniform grains andshowed intense green photoluminescence. The luminescenceintensities of the samples prepared by the polymerized complex method
were higher than those prepared by solid-state reaction method.
PHp - 18

Optical Degradation Characteristics of SubMicrometer Sized Eu-Complex Encapsulated by SolGel Derived Silica Glass
S. Kato, T. Fukuda, E. Kin, Z. Honda, N. Kamata
Saitama Univ., JapanWe demonstrated a sub-micrometer sized Eu-complex encaps
hyphenationulated by a sol-gel derived silica glass. The opticaldegradation characteristics were measured by changing thecomposition ratio of a sol-gel starting solution. We found that thecomposition of deionized water is important parameter for the efficient
encapsulation around Eu-complex.
PHp - 19

Luminance Uniformity of Organic-Dye-Dispersed
Hybrid Powder-Type Electroluminescent Device
Y. Noguchi, Y. Masakura, T. Tamura, T. Uchida, T. SatohTokyo Polytech. Univ., JapanThe
luminance
uniformityofconventional
powder-type
electroluminescent (EL) and hybrid EL devices was compared using ahigh-resolution camera. More details were revealed using a lowresolution camera. It was confirmed that the emitting region of thephosphor particle broadened because it distributed the organic dye byusing the high-resolution camera.

102

Wednesday
PHp - 20

December 9
DC-Driven Hybrid n-ZnO Nanocrystal/P-Pentacene
Heterojunction EL Devices
H. Takeuchi, H. Kawasaki, T. Toyama, H. Okamoto
Osaka Univ., JapanWe demonstrate DC-driven hybrid EL devices composed of sol-gel
derived n-ZnO nanocrystal emission layers and p-pentacene holetransport layers. The EL emission, consisting of sharp ultraviolet (~380nm) and broad green-yellow (~560 nm) spectral components, wasobserved. We also arranged pentacene at the cathode side, and foundthat the green-yellow component decreased.
PHp - 21

EL Devices Using Inorganic Phosphor Synthesized
by Vacuum Microwave System
N. Taguchi, Y. Kobayashi*, Y. Uraoka*
Image Tech, Japan*Nara Inst. of S&T, Japan

We investigated the characteristics of ZnS phosphor-powders
synthesized by vacuum microwaves (VMW) and that of EL emission
using the phosphors.It was found that the powders showed strong PL ofpeak wavelength of 450 nm without ZnO structures, and EL devices
using those with a Cu activator gave uniform emissions.
PHp - 22L

Optimized Process Condition for Transparent
Zn2SiO4:Mn2+ Phosphor Layer via Spray Pyrolysis
K. Kim, Y.-M. Moon, S. Choi, H.-K. Jung
Korea Res. Inst. of Chem. Tech., Korea

Transparent Zn2SiO4:Mn2+ luminescent layer is realized by spraypyrolysis method. The obtained film is transparent under visible spectral
range and exhibits strong green emission upon vacuum ultraviolet
excitation. Using controlled spray conditions, we can easily obtain afilm-type phosphor layer without additional organic-based printing
process.
Fabrication of Wavelength Converting Plastic Films
Comprised of Organic Dyes for the Application to
LED-Based Planar White Light Source
S. W. Kim, Y. H. Kim, S. H. Hwang, H. S. Yoo, D. Y. Jeon
KAIST, Korea
For the application to LED-based planar white light source, wefabricated wavelength converting plastic films comprised of organic dye
by using a simple roll printing laminator. The wavelength converting
films have shown the possibility as large size flexible wavelength
converter for forming LED-based planar white light source.

103

PH

PHp - 23L

Wednesday
PHp - 24L

December 9
Optical Properties of the Sr2SiO4:Eu2+ Phosphor
Coated with Al2O3 Nano-Particles for White Light
Emitting Diodes
S. J. Han, S. M. Lee, S. H. Sohn
Kyungpook Nat. Univ., Korea

The surface of Sr2SiO4:Eu2+ phosphor was coated with Al2O3 nanoparticles in a simple surface treatment way, a kind of the modified solgel method. It was found that the surface coating of Sr2SiO4:Eu2+
phosphor with Al2O3 nano-particles leads to an increase in theluminance intensity.
PHp - 25L

High-Brightness Barium Silicate Phosphor Filmthrough Spin-Coating Process
P. K. Shon, J. H. Park, J. S. Kim, S. N. Lee
Pukyong Nat. Univ., Korea

2+

Eu -doped BaSi2O5 film phosphors on quartz substrates arefabricated by spin-coating process. The BaSi2O5:Eu2+ film phosphor
shows 500 nm green emission from the f-d transition of the Eu2+ ions,and in particular the best sample shows a green photoluminescencebrightness comparable to 5% of a BaSi2O5:Eu2+ powder phosphor
screen.
PHp - 26L

Photoluminescent Properties of Zn1-XCdXO Particles
Fired under the High-Pressure
T. Sano, H. Kominami, Y. Nakanishi, K. Hara
Shizuoka Univ., Japan

Liquid phase synthesis of ZnCdO powder fired under the high-pressure
has been investigated for aim to the preparation of multi-layered ZnO/
ZnCdO particles. As the result, the ZnCdO powder showed stronger
emission of exciton and suppressed the emission from oxygenvacancies.
PHp - 27L

Effect of 355 nm Laser Annealing for Preparation of
SrGa2S4:Eu Thin Film Phosphors
T. Yamasaki, T. Seino*, H. Kominami, Y. Nakanishi,
Y. Hatanaka**, K. Hara
Shizuoka Univ., Japan*Japan Steel Works, Japan**Aichi Univ. of Tech., Japan

SrGa2S4:Eu thin film phosphors were prepared in view of theapplication for FEDs. The films showed green emission peaked at 530
nm based on Eu2+ luminescence center by laser-annealing of Nd:YAG
355 nm. It was obtained that the laser-annealing of 355nm is quite
effective for the treatment of whole film.

104

Wednesday
PHp - 28L

December 9
On the Large Threshold Voltage Shifts of NanoStructured Thin Film Electroluminescent Device
S. H. Choi, H. S. Moon, S. G. Lee*, S. H. Sohn
Kyungpook Nat. Univ., Korea*Korea Basic Sci. Inst., Korea

A large threshold voltage shift ∆Vth seen in the nanostructured-thin film
electroluminescent device (NS-TFELD). The estimates of ∆Vth in NSTFELD are in good agreement with the experimental data, implying that
NS-TFELD operating at very low voltages will be realized.
PHp - 29LA Novel Organic Dye as an Efficient Color Converter
for White LEDs
S. H. Hwang, S. W. Kim, H. S. Yoo, D. Y. Jeon
KAIST, Korea

In this study, a yellow-emitting dye, 3-(4-(diphenylamino)phenyl)-1(naphthalene-2-yl)prop-2-en-1-one (DPNO) was synthesized. Its PL
excitation spectrum was well matched with InGaN blue LED and its PL
emission intensity was higher than the existing structure. Also, the CIE
color coordinates of were suitable to obtain white light which has high
CRI value.
PHp - 30L

Transparent ZnSe/ZnS QD-PMMA Nanocomposite
Films and their Luminescent Properties
B.-H. Kwon, S. W. Kim, H. S. Jang*, H. S. Yoo,
S. G. Lee**, D. Y. Jeon
KAIST, Korea
Purdue Univ., USA**Korea Minting & Security Printing, Korea
*

105

PH

ZnSe quantum dots showing quantum confinement effect aresynthesized by an organometallic method. The hybrid material
composed of PMMA and ZnSe/ZnS quantum dot is fabricated using aradical polymerization process. The transparent nanocomposite films
have two sharp emission that is different from the emission shape of
ZnSe/ZnS QDs.

Thursday

December 10
Thursday, December 10

9:00 - 10:25

KAIHO

PH1: Phosphors in General
Chair:
Co-Chair:PH1 - 1:
9:00

D. Y. Jeon, KAIST, Korea
S. Okamoto, NHK, Japan
Invited Impurity-Doped Semiconductor Nanocrystals
as Novel Luminescence Materials
A. Ishizumi, Y. Kanemitsu*
Nara Inst. of S&T, Japan*Kyoto Univ., Japan

Semiconductor nanocrystals doped with optically active impurities
become novel efficient nanophosphors under UV-light and electronbeam excitation. Unique interactions between impurities and electrons
confined in nanocrystals markedly improve efficiency and stability of
impurity luminescence.
PH1 - 2
9:30

Development of Calculation Method for Excited
Energy Distribution in Photo-Excitation Equilibrium
State
H. Onuma, I. Yamashita, K. Serizawa, H. Tanno*,
A. Suzuki, H. Tsuboi, N. Hatakeyama, A. Endou,
H. Takaba, M. Kubo, H. Kajiyama*, A. Miyamoto
Tohoku Univ., Japan*Hiroshima Univ., JapanWe developed a new simulation method for excited energy distribution
in photo-excitation steady state. It was applied on SrS:Eu2+ phosphor.
Excited electron and hole states strongly reflected the Eu 5d and 4f
orbitals. We also investigated the effects of structural defects on the
excited energy distribution.
PH1 - 3
9:50

Development of Novel Nanoprobes for Biological
Submicroscopic Multicolour Imaging
J. Silver, R. Withnall, T. Ireland, G. Fern, I. Morrison*,
P. O’Toole*, P. Reip**, A. Godfrey**
Brunel Univ., UK*
Univ. of York, UK**Intrinsiq Materials, UK

Nanocrystal (ca. 10-40 nm size) monoclinic Y2O3:Eu phosphor has
been synthesized and the effect of the monoclinic to cubic phasetransformation on its cathodoluminescence and photoluminescence
properties has been investigated after annealing the phosphor in thetemperature range of 850 to 1000°C.

106

Thursday
PH1 - 4L
10:10

December 10
Low Temperature Annealing Effects on ZnO Thin
Films Sputtering Deposited on [100] Silicon
Substrate
C. Li, T. Matsuda, T. Kawaharamura, Y. Nakanishi*,K. Ichinomiya**, H. Furuta, T. Hiramatsu, M. Furuta,
T. Hirao
Koichi Univ. of Tech., Japan*Shizuoka Univ., Japan**Nichia, JapanZnO thin film phosphors were successfully prepared by annealing in
reducing gas under low temperature.The formation of fluted hexagonalcone nano-structures was attributed to self-catalyzing effect. It was
found that annealing time was a critical parameter influencing thephotoluminescence and the structural properties of the ZnO thin films.
----- Break -----

10:40 - 12:10

KAIHO

PH2: Phosphors for LEDs 1
Chair:
Co-Chair:PH2 - 1:
10:40

R. Withnall, Brunel Univ., UK
T. Kusunoki, Sony, Japan
Invited Nitrido- and Oxonitridosilicate Phosphor
Materials -- A Synthetic and Structural Point of View
M. Zeuner, W. Schnick
Univ. of Munich, Germany

PH2 - 2
11:10

Luminescent Properties of Eu2+-Doped Ca-α-SiAlON
Phosphors Synthesized by Spark Plasma Sintering
S.-W. Choi, S.-H. Hong
Seoul Nat. Univ., Korea

Eu 2+ -doped Ca-α-SiAlON phosphors with compositions ofCam/2-xEuxSi12-(m+n)Alm+nOnN16-n were successfully prepared by spark
plasma sintering (SPS). The phase, compositions, and luminescence
properties of Eu2+-doped Ca-α-SiAlON phosphors were investigated indetail. In this study, the influences of Ca and Eu doping concentrationand matrix composition on the luminescence performance have been
focused.

107

PHThis paper covers the talk by Zeuner and the supplementing poster byHecht, giving an overview of our recent findings concerning the basic
search for new nitridic phosphors. Also recent developments regarding
synthesis improvements of established excellent phosphor compounds
as well as material property optimizations will be summarized anddiscussed.

Thursday
PH2 - 3
11:30

December 10
Stability Improvement in Eu-Complex Encapsulated
by Sol-Gel Derived Silica Glass Using Catalyst
T. Fukuda, S. Yamauchi, Z. Honda, N. Kamata, N. Kijima*
Saitama Univ., Japan*Mitsubishi Chem., Japan

An organic-inorganic emitting film with Eu-complex was realized via a
sol-gelprocessusingphenyltrimethoxysilane
anddiethyldimethoxysilane as encapsulating agents. In addition, theimprovement in stability was achieved by adding acetic acid as thecatalyst.
PH2 - 4
11:50

Effect of Si-Codoping on Crystallographic and
Photoluminescent Characteristics in CuAlS2:Mn Red
Phosphor for Near-UV Excitation
Y. Miyamoto*,**, K. Ohashi**, K. Ohmi**, H. Yoshida****TEDREC, Japan**Tottori Univ., Japan***NEC Lighting, Japan

Effects of Si-codoping on crystallographic and photoluminescentcharacteristics have been investigated in CuAlS2:Mn phosphor. Results
suggest that Si relieves lattice distortion, and enhances Mn
incorporation into host lattice, resulting in increase of luminescence. PL
excitation characteristics for 400 nm excitation has been improved by
employing the mixed crystal compound Cu(Al,Ga)S2.
----- Lunch -----

13:20 - 14:40

TENJU

PH3: Phosphors for LEDs 2
Chair:
Co-Chair:PH3 - 1:
13:20

R.-J. Xie, NIMS, Japan
M. Shiiki, Hitachi, Japan
Invited Advantages of Phosphor Sheet Structure in
LED Backlight System
R. Kasegawa, Y. Ito, T. Tsukahara, A. Ono, N. Nada,
Y. Oshima, T. Kusunoki, T. Igarashi, T. Izawa
Sony, JapanThe thermal quenching and saturation characteristics of luminance from
phosphors excited by blue light were measured. Backlight units withblue LEDs and a phosphor sheet that is remote from the LEDs were
demonstrated to have higher phosphor efficiencies than backlight units
that use conventional white LEDs.

108

Thursday
PH3 - 2:
13:50

December 10
Invited UV Excitable KSrPO4:Eu (blue) andSr3(Al2O5)Cl2:Eu (orange-yellow) Phosphors for
White Light Emitting Diodes
R. S. Liu, C. C. Lin, Y. S. Tang*, S. F. Hu*
Nat. Taiwan Univ., Taiwan*
Nat. Taiwan Normal Univ., Taiwan

KSrPO4 and Sr3(Al2O5)Cl2 phosphors doped with Eu2+ emit a blue andorange-yellow luminescence under ultraviolet (UV) excitation at ~ 400
nm, respectively, which can be used for making white light emitting
diodes.
PH3 - 3
14:20

Improvement in Luminescent Properties of Emissive
LCD Consisting of RGB Patterned Phosphors andNear-UV LED
T. Yata*,***, Y. Miyamoto*,**, K. Matsumoto****,
J. Nishiura****, N. Koma***, K. Ohmi**Tottori Univ., Japan**TEDREC, Japan***

Epson Imaging Devices, Japan****LEIZ LINE, Japan

A novel emissive liquid crystal display (e-LCD) consisting of RGB
patterned phosphors and near-UV LED has been proposed. A lightutilization efficiency is more than 2 times higher compared toconventional LCDs. The e-LCD enables to achieve high power
efficiency and wide viewing angle, while maintaining broad color
reproduction range.
----- Break -----

15:00 - 16:10

TENJU

PH4: Phosphors in EL and PDP

PH4 - 1:
15:00

PH

Chair:
Co-Chair:K. Wani, Tazmo, Japan
K. Ohmi, Tottori Univ., Japan
Invited Recent Development of Oxyfluoride
Phosphors for Plasma Display Panels
T. Kunimoto, K. Ohmi*
Tokushima Bunri Univ., Japan*Tottori Univ., Japan

Recent progress of the oxyfluoride phosphor material for Plasma
Display Panels have been reported. Tb-doped Ba4Gd6Si6O24F2 andYOF have been proposed as novel green phosphors for vacuum-UV
excitation. Chemical processing of Ba4Gd6Si6O24F2:Tb phosphor andrelation between the crystal structure and photoluminescence
properties of YOF:Tb phosphor are discussed.
109

Thu./Fri.
PH4 - 2
15:30

December 10/11
Low-Electric-Field-Driving Electroluminescence in((Ca0.6Sr0.4)0.997Pr0.002)TiO3 and SrTiO3 Perovskite
Films
H. Takashima, N. Miura*, Y. Inaguma**, K. Ueda***,M. Itoh****AIST, Japan*Meiji Univ., Japan**Gakushuin Univ., Japan***
Kyushu Inst. of Tech., Japan****Tokyo Inst. of Tech., Japan

Electroluminescence(EL) in a perovskite thin-film with double phosphor
layers of ((Ca0.6Sr0.4)0.997Pr0.002)TiO3 sandwiched by insulating layers
of SrTiO3 were obtained. Red color was produced. The equivalentcircuit of a thin-film EL device is simply five series-connected
capacitors. The electric field of the phosphor layer at 20 V is about 7.5×
104 Vcm-1.
PH4 - 3
15:50

High Flexibility Powder ACEL Displays
R. Withnall, J. Silver, P. Harris
Brunel Univ., UK

High flexibility electroluminescent displays find applications in many
areas, such as keypads where the device may need to be flexed manytimes during its lifetime, or alternatively for situations where they need
to be shape conformable. This paper describes a low cost route for
producing bright, highly flexible ACEL devices.

Author Interviews
18:00 – 19:00

Friday, December 11
10:40 - 11:50

KAIHO

FED2/PH5: Phosphors for FEDs
Chair:
Co-Chair:110

M. Nakamoto, Shizuoka Univ., Japan
H. Shimawaki, Hachinohe Inst. of Tech., Japan

Friday

December 11

FED2/
PH5 - 1:
10:40

Invited Nanostructure Carbon for FED and White LED
Application
Z. Sun, T. Feng, L. Pan, Z. Zhang, Y. Chen, L. Lin,S. Huang, P. Guo, H. Li
East China Normal Univ., China

Nanostructure carbon films including diamond and carbon nanotubes(CNTs) have been attracting considerable attentions both fromscientists and engineers, and related applications in high power lightemitting diode (LED) and field emission display (FED) devices arereviewed. A new kind of nitride phosphors for white LED wasintroduced.
FED2/
PH5 - 2
11:10

Stimulated Emission from ZnO Micro Crystal with
Cavity Structures for Field Emission Display
Y. Neo, Z. Xiao, G. Han*, M. Okada, T. Aoki, H. Mimura
Shizuoka Univ., Japan*NIMS, JapanThe optical properties of ZnO micro structures, fabricated by using
liquid and vapor phase growth techniques, were investigated. The
hexagonal thin disks and three legs tetrapod were obtained,
respectively. The cavity modes could be observed under strong
irradiation conditions. Further, the peaks intensities showed non-leaner
characteristics, considered as stimulated emission.
FED2/
PH5 - 3L
11:30

Electrostatic Focusing for FEA Image Sensor with
HARP Target
Y. Honda*, M. Nanba*,**, Y. Takiguchi*,**, K. Kikuchi*,H. Seo*, S. Aihara*, T. Watabe*, H. Ohtake*, N. Egami*,
Y. Saishu***, K. Nakamura***, M. Taniguchi****NHK, Japan**Shizuoka Univ., Japan***Futaba, Japan

Author Interviews
16:20 – 17:20

Supporting Organizations:
The 125th Research Committee on Mutual Conversion between Lightand Electricity, Japan Society for Promotion of Science
Phosphor Research Society, The Electrochemical Society of Japan

111

PH

A new electrostatic focusing Spindt-type FEA was simulated andfabricated for it to be applied to a compact FEA image sensor. The
experimental results show that the emission current of the double-gated
FEA can be improved without focusing characteristics deteriorating byincreasing the thickness of the first gate electrode.

Friday

December 11

Workshop on
Field Emission Display and CRT
Friday, December 11
9:00 - 9:10

KAIHO

Opening
Opening Remarks
9:00
M. Takai, Osaka Univ., Japan
9:10 - 10:20

KAIHO

FED1: CNTs & FEDs
Chair:
Co-Chair:
FED1 - 1:
9:10

H. Mimura, Shizuoka Univ., Japan
M. Nagao, AIST, Japan
Invited High Performance Carbon Nanotube Field
Emitters for Backlight of Liquid Crystal Display
Y. Kim, H. Kim, J. Heo, I. Han, W. Cho*, B. Ju*, Y. Kim,
J. KimSamsung Advanced Inst. of Tech., Korea*Korea Univ., Korea

We present recent progress in CNT field emitters for the application inbacklight unit of LCD. Formulation of CNT paste has been optimized toform cracks automatically during firing process, leading to exposure of
CNT networks in between the cracks.
FED1 - 2
9:40

Influence of CNT Diameters of Screen-Printed
Cathode on Field Emission Characteristics
T. Takikawa, H. Oki, Y. Matsuura, K. Murakami, S. Abo,
F. Wakaya, M. Takai
Osaka Univ., JapanThe relationships between the field emission characteristics of screenprinted carbon nanotube (CNT) cathodes and the diameters of CNTs
were investigated. The CNT cathode with a smaller CNT diameter
showed lower turn-on field. The field emission lifetimes of CNT
cathodes after laser irradiation were long enough regardless of the CNT
diameter.

112

Friday
FED1 - 3
10:00

December 11
Development of Large-Size MIM-Cathode-Arrays for
FEDs Application
T. Kusunoki, M. Sagawa, M. Suzuki, E. Nishimura,
M. Ikeda, K. Tsuji
Hitachi, Japan----- Break -----

10:40 - 11:50

KAIHO

FED2/PH5: Phosphors for FEDs
Chair:
Co-Chair:
FED2/
PH5 - 1:
10:40

M. Nakamoto, Shizuoka Univ., Japan
H. Shimawaki, Hachinohe Inst. of Tech., Japan
Invited Nanostructure Carbon for FED and White LED
Application
Z. Sun, T. Feng, L. Pan, Z. Zhang, Y. Chen, L. Lin,S. Huang, P. Guo, H. Li
East China Normal Univ., China

Nanostructure carbon films including diamond and carbon nanotubes(CNTs) have been attracting considerable attentions both fromscientists and engineers, and related applications in high power lightemitting diode (LED) and field emission display (FED) devices arereviewed. A new kind of nitride phosphors for white LED wasintroduced.
FED2/
PH5 - 2
11:10

Stimulated Emission from ZnO Micro Crystal with
Cavity Structures for Field Emission Display
Y. Neo, Z. Xiao, G. Han*, M. Okada, T. Aoki, H. Mimura
Shizuoka Univ., Japan*
NIMS, JapanThe optical properties of ZnO micro structures, fabricated by using
liquid and vapor phase growth techniques, were investigated. The
hexagonal thin disks and three legs tetrapod were obtained,
respectively. The cavity modes could be observed under strong
irradiation conditions. Further, the peaks intensities showed non-leaner
characteristics, considered as stimulated emission.

113

FED

We developed large-size MIM-cathode-arrays for FEDs. Resistances ofscan electrodes decreased to 1/20, and emission efficiency increased
to 3%. An FED using the cathode array showed high peak brightness(832cd/m2) and luminous efficiency (9.11 lm/W).

Friday
FED2/
PH5 - 3L
11:30

December 11
Electrostatic Focusing for FEA Image Sensor with
HARP Target
Y. Honda*, M. Nanba*,**, Y. Takiguchi*,**, K. Kikuchi*,H. Seo*, S. Aihara*, T. Watabe*, H. Ohtake*, N. Egami*,
Y. Saishu***, K. Nakamura***, M. Taniguchi****NHK, Japan**Shizuoka Univ., Japan***Futaba, JapanA new electrostatic focusing Spindt-type FEA was simulated andfabricated for it to be applied to a compact FEA image sensor. The
experimental results show that the emission current of the double-gated
FEA can be improved without focusing characteristics deteriorating byincreasing the thickness of the first gate electrode.
----- Lunch -----

13:20 - 14:40

KAIHO

FED3: Field Emitters (1)Chair:
Co-Chair:M. Takai, Osaka Univ., Japan
H. Nakane, Muroran Inst. of Tech., Japan

FED3 - 1
13:20

FEA Based on Ion-Induced Bending (IIB) Technology
for Large-Sized FED
T. Yoshida, M. Nagao, S. Kanemaru
AIST, Japan

A simple field-emitter-array (FEA) fabrication process based on ioninduced bending (IIB) technology was developed. The procedural
advantages of IIB are that it uses small quantities of material and nonspecialized equipment. IIB would therefore be compatible with standard
TFT fabrication processes and could produce large-sized FEDs.
FED3 - 2
13:40

Developing Vertical Thin Film Field Emitter Array for
CdTe X-ray Imaging Sensor
Y. Tsunekawa, M. Nakagawa, Y. Neo, H. Morii, T. Aoki,
H. Mimura, M. Nagao*, T. Yoshida*, S. Kanemaru*
Shizuoka Univ., Japan*AIST, Japan

We have demonstrated the CdTe X-ray imaging device consists of a
Schottky CdTe diode and a VTFFEA matrix. The output signals weresuccessfully detected by the recombination of holes with electrons fromthe FEA, and depended on the X-ray tube voltage, indicating the signals
were promotional to the X-ray intensity.

114

Friday
FED3 - 3
14:00

December 11
Intensity Distribution of Electron Emission from ncSi MOS CathodeH. Shimawaki*,***, K. Murakami***, Y. Neo**, H. Mimura**,F. Wakaya***, M. Takai****Hachinohe Inst. of Tech., Japan**

Shizuoka Univ., Japan***Osaka Univ., Japan

FED3 - 4
14:20

Surface-Conduction Electron Emission from Nb-Si-N
Thin Film
S. Xiong, Z. Song, S. Wu, L. Zhao, J. Wang, H. Wu,
C. LiuXi’an Jiaotong Univ., China

We propose to sputter a new ternary material Nb-Si-N as the
conductive film. With this ternary film composition, the film’s sheet
resistance can be adjusted easily to satisfy the requirement of theelectro-forming process. The experiment results show that Nb-Si-N canbe a kind of conductive film material for SCEs.
----- Break -----

15:00 - 16:00

KAIHO

FED4: Field Emitters (2)Chair:
Co-Chair:M. Sasaki, Univ. of Tsukuba, Japan
Y. Neo, Shizuoka Univ., Japan

FED4 - 1
15:00

Fabrication of Titanium-Oxide Nanowires on Glass
Substrate and Their Field-Emission Properties
F. Wakaya, T. Takikawa, M. Miki, C. Fukuyama,
K. Murakami, S. Abo, M. Takai
Osaka Univ., Japan

Titanium-Oxide nanowires were successfully fabricated directly on a
glass substrate. This is profitable in realizing large-diagonal fieldemission displays and backlight units. Field-emission current from thetitanium-oxide nanowires fabricated directly on a glass substrate was
first observed.

115

FED

A planar-type cold cathode composed of a thin film diode structure
produces highly directional emission in contrast with a field emission
cathode. Emission uniformity in nanocrystalline silicon based MOS
planar cathodes prepared by pulsed laser ablation was investigated bya Faraday-cup with a probe hole of 20 µm in diameter.

Friday
FED4 - 2
15:20

December 11
Field Emission Characteristics of Boron Carbon
Nitride Films Deposited on Patterned Substrate
S. Kawai, N. Ooi, E. Kubo, C. Kimura, H. Aoki, T. Sugino
Osaka Univ., JapanAn influence of the series resistance of the field emitter on the emission
current is investigated for BCN films. The series resistance decreases
with increasing density of the emission spots. In order to increase
emission spots, BCN film is grown on the patterned substrate and fieldemission characteristics are measured.
FED4 - 3
15:40

Analysis of Field Emission Characteristics of Field
Stabilized Liquid Cone
Y. Gotoh
Kyoto Univ., Japan

Electron emission characteristics of field stabilized liquid cone wereanalytically derived with an improved model of liquid cone on a baseneedle emitter. The obtained characteristics showed a better agreementwith the experimental results.

Author Interviews
16:20 – 17:20

Sponsor:
JSPS 158th Committee on Vacuum Nanoelectronics
Supporting Organizations:Technical Group on Information Display, ITE
Technical Committee on Electronic Information Displays, Electronics
Society, IEICEBANQUET
Wednesday, December 9, 2009
19:30–21:30
Room “TENZUI” (4F)
World Convention Center Summit
See page 9 for details
116Wednesday

December 9

Workshop on Organic LED Displays
Wednesday, December 9
13:20 - 14:40

TENYO

OLED1: OLED Material and Device
Chair:
Co-Chair:S. Sakai, Seiko Epson, JapanT. Wakimoto, Merck, Japan

OLED

OLED1 - 1: Invited Future Trend of AMOLED Technology
13:20
S. C. Kim, C. H. Lee, J. H. Lee
Samsung Mobile Display, Korea
This article reviews current technological issues of mobile display andunique applications of AMOLED such as foldable, bendable andtransparent displays. In addition, the key technologies that should be
developed for large-sized AMOLED TV are also reviewed. For largesized AMOLED TV, TFT, color patterning and encapsulation aretechnological issues.
OLED1 - 2: Invited Novel Transport Materials for High
13:45
Performance OLEDsE. Böhm, C. Pflumm, F. Voges, H. Heil, A. Büsing,
A. Parham, R. Fortte
Merck KGaA, Germany
We show that efficiency, voltage and lifetime cannot be optimised
simultaneously in blue fluorescent OLEDs. With novel ETMs, any
desired trade-off in performance can be obtained. In an optimised
system, 8.5% EQE were achieved. With thick ETLs, we obtain low
driving voltage and improved color purity in green phosphorescent
OLEDs.
OLED1 - 3
14:10

High Efficiency and Long-Lived Green
Phosphorescent OLEDs
H. Yamamoto, V. Adamovich, B. Ma, J. Fiordeliso, S. Xia,
R. Kwong, M. Weaver, J. Brown
Universal Display, USA

We demonstrate a new high efficiency and long-lived green
phosphorescent OLED. A non-cavity bottom emission device shows aluminous efficiency of 66 cd/A at 1000 cd/m2 with 1931 CIE = (0.33,
0.62), and record lifetime of 500,000hrs to LT50 from 1000cd/m2.

117

Wednesday
OLED1 - 4
14:25

December 9
Development of Novel Method Based on Quantum
Chemistry Calculation for Analysis of Carreir
Transfer in Light Emitting Layers
I. Yamashita, K. Serizawa, H. Onuma, A. Suzuki,
H. Tsuboi, N. Hatakeyama, A. Endou, H. Takaba,
M. Kubo, M. Williams*, A. Miyamoto
Tohoku Univ., Japan*
Univ. of Utah, USA

We developed a novel method for analysis of carrier transfer in lightemitting materials by using quantum chemistry calculation and MonteCalro method. We applied it to analysis of electron transfers in blue lightemitting polymers. We investigated the effects of atomistic scalemorphologies on electron transfers in polymer films.
----- Break -----

15:00 - 16:20

TENYO

OLED2: OLED Technologies
Chair:
Co-Chair:E. Böhm, Merck KGaA, Germany
H. Kubota, Toshiba Mobile Display, Japan

OLED2 - 1: Invited Inkjet Technology Enables Uniform Light
15:00
Emission for Large-Screen OLED TVs
S. Sakai, S. Takei, A. Kitabayashi, H. Hanaoka,
K. Shinohara, M. Goto, N. Mitsuo, S. Seki, S. Miyashita
Seiko Epson, JapanThe Ink volume in each pixel was equalized within a range of 0.4%
deviation. The relation between the ink volume and light emission wasquantified on a specially designed test substrate. The developed
technology was applied to a large screen OLED TV and uniform lightemission was demonstrated.
OLED2 - 2: Invited Light Extraction Techniques in High Efficiency
15:25
200-lm/W Organic Light Emitting Devices Coupledwith High-Refractive-Index Substrate
A. Mikami
Kanazawa Inst. of Tech., Japan
Light extraction efficiency has been successfully enhanced by using
high refractive index substrate and textured micro-lens array coupledwith weak micro-cavity structure. For phosphorescent CBP:Ir(ppy)3
based green OLEDs, power efficiencies over 200-lm/W were obtainedwith an external quantum efficiency of 57%. Device design process will
be discussed from the optical viewpoint.

118

Wednesday
OLED2 - 3
15:50

December 9
Microplasma Current Switch and Its Characteristics
J. Y. Cai, M.-M. Kim, C.-H. Moon, S.-Y. Lee, S. Yi
Hoseo Univ., Korea

A microplasma current switch for a device operated in a current mode
like organic light-emitting diodes, which features matrix addressability
and current switching, is presented as well as its current-voltage
characteristic and analysis. The dependence of the current-voltage
characteristic on voltage signal elements for plasma generation is also
described.
OLED2 - 4
16:05

Increasing PMOLED Efficiency by Decimating theCharging/Discharging Power LossOLED

C. Xu, C. Codrea, M. Buczek
Saarland Univ., Germany
The capacitive power dissipation in PMOLED display drivers is
considerably reduced by means of a state-dependent charge-controlled
driving scheme. The charge stored by the intrinsic OLED capacitances
is not dissipated but reused to maximize the light output efficiency. Thisdriving method is easy to implement and assures the high visual qualityof OLED displays.
----- Break -----

16:40 - 17:40

TENYO

OLED3/AMD3: AM-OLED (1)Chair:
Co-Chair:A. Mikami, Kanazawa Inst. of Tech., Japan
T. Inoue, TDK, Japan

OLED3/
AMD3 - 1
16:40

An OLED-on-Silicon Pixel Structure forMicrodisplays
B.-C. Kwak, H. Kim, H.-S. Lim, O.-K. Kwon
Hanyang Univ., Korea

In this paper, we propose an organic light emitting diode on silicon(OLEDoS) pixel structure for microdisplays with 6-bit gray scale. The“ON” time pulse width of the pixel emission current for representation ofgray scale is determined by switching operation of p-MOSFET andramp signal.

119

Wednesday
OLED3/
AMD3 - 2
16:55

December 9
A Low Mask Count Top Gate Process for AMOLED
Displays Based on Amorphous or Polymorphous
SiliconP. Schalberger, H. Baur, T. Buergstein*, N. Fruehauf
Univ. Stuttgart, Germany*
Robert Bosch, Germany

We have developed a top gate a-Si:H process for AMOLED displays
which requires only four mask steps for the realization of passivatedTFTs. Furthermore we have successfully processed pixel circuits, gate
drivers and AMOLEDs.
OLED3/
AMD3 - 3
17:10

Three-Dimensional Organic Field-Effect Transistors
M. Uno*,**, K. Nakayama*, J. Takeya**Osaka Univ., Japan**TRI-Osaka, Japan

We have developed easy MEMS-based processes that realize threedimensional organic field-effect transistors with multiple verticalchannels on plastic platforms. The devices present outstanding current
and on-off ratio which sufficiently drive pixels of organic light-emitting
diodes.
OLED3/
AMD3 - 4L
17:25

Development of an Industrial Compatible Process for
BG OTFTs Using Solution Processable Organic
Semiconductors
M. Carrasco-Orozco, C. Leonhard, P. Brookes, T. Cull,
D. Mueller, G. Lloyd, F. Meyer, S. Tierney, J. Canisius,
M. Heckmeier, J. Nakanowatari*
Merck Chems., UK*Merck, Japan

We present our newly developed materials compatible with industrial
process in an effort to bring the use of solution processable organic
semiconductors closer to mass production. We demonstrate OTFTs
with mobilities over 1.5 in BG architecture and (sputtered) silver
electrodes.

Author Interviews
18:00 – 19:00

120

Thursday

December 10
Thursday, December 10

9:00 - 10:10

TENGYOKU

AMD4/OLED4: AM-OLED (2)Chair:
Co-Chair:Y. Matsueda, Matsueda Consulting, Japan
S. Utsunomiya, Seiko Epson, Japan

AMD4/
Invited Top Emitting White OLED Technology for
OLED4 - 1: Small and Medium-Sized AMOLED Displays
9:00
D. Peng, R. Nishikawa
TPO Displays, Taiwan

AMD4/
Invited Development of 4.0-in. AMOLED Display with
OLED4 - 2: Driver Circuit Using Amorphous In-Ga-Zn-Oxide
9:25
TFTs
J. Sakata, H. Ohara, M. Sasaki, T. Osada, H. Miyake,
H. Shishido, J. Koyama, Y. Oikawa*, H. Maruyama*,
M. Sakakura*, T. Serikawa, S. Yamazaki
Semiconductor Energy Lab., Japan
Advanced Film Device, Japan*

We have developed a 4.0-inch QVGA AMOLED display integrated withgate and source driver circuits using amorphous In-Ga-Zn-Oxide TFTs.
And we have successfully developed the world’s first 3.4-inch QHD
AMOLED display integrated with driver circuits.
AMD4/
OLED4 - 3
9:50

Sample and Hold DeMUX Method for Threshold
Voltage Compensation Pixel Circuits of AMOLEDs
S. Choi, C. Kang, S. Hwang, K. Kim, B. Kim
Samsung Mobile Display, Korea

In this paper, a new demultiplexing method is proposed to ensure
adequate time for compensation of threshold voltage variation in a
LTPS TFT. An AMOLED panel has been successfully developed anddriven at 120Hz frame frequency using the proposed method.
----- Break -----

121

OLED

A 3.5” nHD AMOLED display has been developed with top emitting
WOLED + CF technology. It features high-resolution, low power, andextended lifetime. Moreover, to improve the uniformity for highresolution AMOLED, a module compensation approach has been
applied. With these technologies, a high-resolution AMOLED display
with better front-of-screen performance could be achieved.

Thursday

December 10

10:40 - 11:35

TENJU

OLED5: OLED Lighting
Chair:
Co-Chair:Y. Kijima, Sony, Japan
S. Naka, Univ. of Toyama, Japan

OLED5 - 1: Invited High-Performance and High-CRI OLEDs for
10:40
Lighting and Their Fabrication Processes
T. Komoda, H. Tsuji, T. Nishimori, N. Ide, T. Iwakuma*,
M. Yamamoto**
Panasonic Elec. Works, Japan*Idemitsu Kosan, Japan**Tazmo, Japan
A high-CRI, highly efficient white OLED is developed as a two-unit
structure with a fluorescent deep blue emissive unit and aphosphorescent green and red emissive unit. A thin encapsulation
structure is developed for large area, high luminance OLEDs. Highspeed wet-coating and deposition processes are investigated to
improve their productivity.
OLED5 - 2
11:05

High-Performance White OLEDs for Lighting
Application
H. Tsuji, N. Ito, Y. Matsuhisa, S. Houzumi, N. Ide
Panasonic Elec. Works, Japan

A high performance multi-unit OLED device having excellent emission
characteristics of luminous efficacy of 37 lm/W and color renderingindex of 95 and very small variation of chromaticity in different directions
is developed. Stable emission at high luminance and long storage
stability are realized with a heat radiative thin encapsulation.
OLED5 - 3
11:20

Visualization Technique and Evaluation of Meniscus
Shape in Slit Coat Method for Uniform Coating of
Nano-Meter Film under Atmoshperic Environment
T. Kawaguchi, Y. Ikagawa, M. Yamamoto
Tazmo, Japan

Slit coat method makes it possible to form uniform coating of nanometer film for OLED’s to substrate under atmospheric pressure. By
evaluating it with Visualization technique of meniscus shape and CAE
analysis, it was found stabilizing the meniscus shape is important.
----- Lunch -----

122

Thursday

December 10

13:20 - 16:20

3F Foyer

Poster OLEDp: OLED Poster
OLEDp - 1

Efficient Energy Transfer of Red Organic Light
Emitting Devices Using Two Species of Donors in
Emissive Layer
L. Lin, J. Zhang, B. Wei, H. Zhang, H. Xu*
Shanghai Univ., China*SVA Electron, China

OLEDp - 2

High Efficiency and Large Energy Band-Gap HostMaterials for Blue Phosphorescent Emitters
H.-L. Huang, C.-J. Lin*, C.-H. Cheng*, M.-R. Tseng
ITRI, Taiwan*Nat. Tsing Hua Univ., Taiwan

The blue phosphorescent OLED with high efficiency, high thermal
stability and high brightness will be illustrated in this paper. Applying
new high energy gap host materials can easily trap the recombinationenergy of holes and electrons within emitting layer and effectivelytransfer to blue phosphorescent emitters to emit blue light.
OLEDp - 3

Long Lifetime and High Efficiency ElectronTransporting Materials for Green Phosphorescent
Emitters
H.-L. Huang, T.-C. Chao, J.-S. Lin, M.-R. Tseng
ITRI, Taiwan

The green phosphorescent OLED with long lifetime, high efficiency,
high thermal stability and high brightness will be illustrated in this paper.
Applying new electron transporting materials(ETL-C4) can help theelectron injection from electrode and exhibit much longer lifetime thanconventional BPhen materials.

123

OLED

We have investigated the characteristics of red OLEDs with two donors
and one dopant in emissive layer. The electroluminescence efficiency ofthe device increased two folds compared to devices with single hostmaterials while the peak emission kept unchanged.

Thursday
OLEDp - 4

December 10
OXD Derivative as the Host Material of the Blue
Phosphorescent OLED
C.-L. Huang, C.-H. Hsiao, J.-H. Lee, C.-C. Yang,
C.-C. Chao, M.-K. Leung, S.-T. Yeh*Nat. Taiwan Univ., Taiwan*ITRI, Taiwan

In this paper, we demonstrated a blue phosphorescent organic lightemitting device with lower driving voltage and higher efficiency basedon conventional iridium(III)bis(4,6-(di-fluorophenyl)-pyridinato-N,C2’)
picolinate emitter doped in our new-synthesized electron-transporting
host material, 2,2’-bis[5-phenyl-2-(1,3,4)oxadazolyl]biphenyl.
OLEDp - 5

High Efficiency Deep Blue Electro-Phosphorescent
OLEDs Based on Bipyridinated Iridium Complex
C. H. Lee, S. G. Yang, H. Y. Kim, Y. K. Kim, S. H. Hwang,
H. J. Ko, D. Y. Shin, J. H. Lee, S. C. Kim
Samsung Mobile Display, Korea

A series of new blue-phosphorescent iridium(III) complexes with ligandof 2,3’-bipyridine(bipy) derivatives were designed, synthesized, andelectro-luminescent (EL) properties were investigated. To obtain pure
blue emission, we introduced Fluorines at the position of 2’ and/or 6’ of
3’-pyridine. Blue electro-phosphorescent device was fabricated with
2’,6’-difluoro-2,3’-bipyridine iridium (III) picolinate.
OLEDp - 6

All Wet Processed OLED Directly Electron Injection
from Al Cathode with New n-Doped ETL Material
Y. Goto, M. Noto*
Kyushu Elec. Power, Japan*
Dyden, JapanWe demonstrated that the all wet processed yellow OLED using new ntype doped ETL directly injected electron from Al cathode without
alkaline earth metal cathode or buffer layer. The OLED using DYETM17:nDQD-1(10wt%) as ETL exhibited low driving voltage evaluated tobe 2.6V at luminance of 100cd/m2.
OLEDp - 7

Mechanistic Analysis for Low-Voltage and LongLifetime Operation of the OLEDs with New ElectronTransport Materials
T. Tanaka, Y. Honma, M. Abe, Y. Miyashita, N. Arai,
A. Ogata*, Y. Hisamatsu*, H. Aihara*
Tosoh, Japan*Sagami Chem. Res. Ctr., JapanWe demonstrated low voltage and long lifetime in organic light-emitting
diode (OLED) devices using newly synthesized electron transportmaterials (ETMs). The relationships between chemical and physicalproperties of ETMs and the device performance were discussed.
124Thursday
OLEDp - 8

December 10
Determination of Localized-State Distributions in
Polyfluorene-Based Light-Emitting Layer by
Impedance Spectroscopy
H. Hase, T. Okachi, T. Nagase, T. Kobayashi, H. Naito
Osaka Pref. Univ., Japan

We propose a method for the determination of localized-state
distributions in organic light-emitting diodes by impedance
spectroscopy. The applicability of the method is demonstrated inpoly(9,9-dioctyl-fluorene-co-N-(4-butylphenyl)-diphenylamine)(TFB).
We show that the measurements are powerful tool for the determinationof localized-state distributions in organic light-emitting diodes.
Optimization of SLS Based-TFT Performance for
AMOLEDOLED

OLEDp - 9

S. Jin, J.-H. Oh, Y. J. Chang, C. H. Park, I.-D. Chung,
K.-H. Lee, J. B. Choi, J.-T. Jung, S. Jeong, W. S. Choi,
S. Y. Cho, H. Min, S. C. Kim, S. S. Kim
Samsung Mobile Display, Korea
A 2.8” WQVGA AMOLED has been developed based on a two-shotsequential lateral solidification process.Leakage current of the poly-Si
TFTs was effectively reduced and made more uniform by applying
electrical off-bias stress to create negative charges near the drain
region. By adapting this method, image quality was significantly
improved.
OLEDp - 10

Effect of the Triplet Energy and Exciton Blocking
Property of the Hole-Blocking Layer of PHOLEDs
Y. W. Park, Y. M. Kim, J. H. Choi, T. H. Park, J. W. Jeong,
B. K. Ju
Korea Univ., Korea

This paper reports on the relationship between the triplet exciton
quenching at the emissive layer/hole blocking layer interface and thetriplet energy of the HBL in phosphorescent organic light-emitting
diodes. The device performance of PHOLEDs significantly depended
on the triplet energy level of HBL.

IDW Tutorial in Japanese
Tuesday, December 8, 2009
Room “TENRAN” (4F)
World Convention Center Summit
Detailed information will be announced in October at
http://www.sidchapters.org/japan/
125Thursday
OLEDp - 11

December 10
High Contrast Blue Organic Light-Emitting Diodes
Using Inorganic Multi-Layer of Al and ZnSe
Y.-H. Kim, S. Y. Lee, W. Song, M. Mong, J.-H. Kim,
B. S. Seo, A. R. Cho, B. Y. Yun, W. Y. Kim
Hoseo Univ., Korea

High contrast blue organic light-emitting diodes were fabricated using
inorganic metal multi layer composed of NPB / MADN / Alq3 / LiF / Al /ZnSe / Al and then compared optical and electrical characteristics withpolarizer attached and conventional OLEDs. Ambient light reflection of
OLED using inorganic metal multi-layer, polarizer and conventional
metal layer were 24.0, 31.1 and 82.5% respectively. OLEDs including
inorganic metal multilayer was improved its contrast ratio of 135:1
comparing with polarizer attached blue OLED as 104:1.
OLEDp - 12

Determination of Charge Carrier Mobility in Tris(8hydroxyquinoline) Aluminum (Alq3) by Means of
Impedance Spectroscopy (IS) Measurements
S. Ishihara*,***, T. Okachi*, H. Naito*,***Osaka Pref. Univ., Japan**The Res. Inst. for Molecular Elect. Devices, Japan***Hitachi, JapanThe hole mobilities of tris(8-hydroxyquinoline) aluminum (Alq3) thin films
and 4,4’-bis[N-(1-naphthyl)-N-phenyl-amino]-biphenyl (NPB) /Alq3
multilayer thin films have been determined using impedance
spectroscopy (IS) measurements. We employed the NPB thin film as abuffer layer to reduce the hole injection barrier between the injection
electrode and the Alq3 thin film.
OLEDp - 13

Efficiency Improvement of Phosphorescent White
Organic Light-Emitting Devices Using Codoped
MethodC.-H. Hsiao, C.-L. Huang, Y.-T. Chang, J.-H. Lee,
S.-T. Yeh*Nat. Taiwan Univ., Taiwan*ITRI, Taiwan

White OLED with a codoped emitting layer consisting of Ir(ppy)3 and red
emitter were investigated. The coexistence of hole-transporting Ir(ppy)3and low-concentration red emitters eliminated hole-trapping effect, thus
reducing driving voltage by 0.8 V, improving external quantum efficiency
by 5.1%, and reaching 20.7 cd/A and 13.7 lm/W at 95 cd/m2.

126Thursday

December 10

OLEDp - 14

Deposition of Thin Film by RF-Plasma Polymerization
Using Monomer of Benzene or Its Derivatives for
Organic Light Emitting Device
R. Koyama, S. Ojiro, Y. Sato, S. Yoshikado
Doshisha Univ., Japan

Thin film appricable to organic light emitting device (OLED) was
deposited using plasma polymerization of benzene, toluene or p-xylene
monomer by discharge at radio frequency (RF) (13.56 MHz). Thin filmof benzene deposited at RF-frequency emitted strongest luminescence.
OLEDp - 15

Polarized OLED on a Flexible Optical Giant
Birefringent Optical (GBO) Substrate

Kwangwoon Univ., Korea
We present highly polarized light emissions from an OLED on a flexible
photonic
giant
birefringent
optical(GBO)
substrate.
Electroluminescence over 4,500 cd/m2 was produced with high peakefficiency and high polarization ratio over 25. Furthermore, it was also
found that the polarization direction corresponded to the ordinary-axisof the anisotropic substrate.
OLEDp - 16

Large-Area OLED Lighting Fabricated by Screen
Printing
H.-C. Shin, K.-H. Lee, D.-H. Lee, S. M. Cho
Sungkyunkwan Univ., Korea

We have successfully fabricated large-area OLED lighting using screen
printing method. The fabricated OLED devices are in the size of 10cm×10cm and 20cm × 20cm and fabricated with screen printing method
except metal cathode. We think that it is possible to realize the largearea OLED lightings using full wet-processes such as screen printing.
Also we report the effect of organic salt doping.
OLEDp - 17

Efficient Electrospray Deposition of Organic Thin
Film Using Cylindrical Acryl Pipe
H. Asaki, T. Asano, T. Fukuda, Z. Honda, N. Kamata
Univ. of Saitama, Japan

We proposed a novel fabrication method for organic devices using theelectrospray deposition process in combination with an acryl pipe. The
charged acryl pipe can control the direction of organic spray, resulting inthe selective deposition area and high deposition rate. The surface
morphology and optical characteristics were investigated.

127

OLED

M.-N. Kim, M.-Y. Han, C. H. Park, Y. H. Huh, H. G. Jeon,
Y. I. Lee, E. H. Choi, Y. H. Seo, G. S. Cho, B. Park

Thursday

December 10

OLEDp - 18

Direct Encapsulation of Heat-Dissipation Layer on
White Organic Light-Emitting Diode by Atomic Layer
Deposition
H. YangNat. Taipei Univ. of Tech., Taiwan

A novel encapsulation technique for heat dissipation of white organic
light-emitting diode (WOLED) was proposed and demonstrated. A layerof alumina was directly deposited on a WOLED by atomic layer
deposition (ALD) at room temperature. This direct encapsulated
WOLED could operate approximate the same condition as that withclass-cap encapsulation.
OLEDp - 19

Patterning of Organic Insulator Using SelfAssembled Monolayers for Organic Light-Emitting
Diodes by Micro-Contact Printing
T. H. Park, Y. M. Kim, Y. W. Park, J. H. Choi, J.-W. Jeong,
H. J. Choi, K. C. Choi*, B.-K. Ju
Korea Univ., Korea*
KAIST, Korea

A self-assembled microarray (SAMA) of organic light-emitting diodes(OLEDs) has been fabricated using self-assembled monolayers (SAMs)
by micro-contact printing (µCP). The hydrophobic SAMs allow to form
self-assembled micro-arrays spontaneously on the patterned SAMs.
OLEDp - 20

Photo-Thermal Deflection Spectroscopy for Surface
Study of Laser Irradiated Donor Plate
K. Lee, K. Lee, J. H. Kwon, L. S. Park*, J. Yi
Yeungnam Univ., Korea*Kyungpook Univ., Korea

The variation of surface morphology was studied by sending probe laseron the laser irradiated donor plate, which is used for laser thermal
printing. The variation of reflected laser power from donor plate was
detected after pinhole.
OLEDp - 21

Organic Light-Emitting Diodes with Contact-Printed
Emissive Layer
J.-H. Jou, S.-H. Peng, S.-Z. Chen, B.-S. Wu,
C.-Y. Chang, P.-H. ChiangNat. Tsing Hua Univ., Taiwan

We use contact-printing method to imprint the emissive layers of R-, G-,
and B-OLED. The preliminary results prove contact-printing to be agood approach to fabricate OLED with various chromaticities especially
useful to achieve high color rendering index.

128

Thursday

December 10

OLEDp - 22L

The Accelerating WVTR Evaluation of Multilayer Gas
Barriers in Flexible OLED Application
J.-Y. Liao, M.-R. Tseng
ITRI, Taiwan

The WVTR of single layer barrier PET films are measured at different
conditions of 25°C/60%RH, 40°C/90%RH, and 85°C/85%RH. The
acceleration factors of 6.5 (40°C/90%RH) and 37.5 (85°C/85%RH) are
obtained compared with 25°C/60%RH. By applying these factors, the
WVTR of the multilayer gas barrier can be extracted at an accelerating
speed.
OLEDp - 23L

L. Wang, J. Wang, L. Lan, W. Xu, J. Peng
South China Univ. of Tech., China
High-efficiency and color stable blue OLEDs with CIE coordinates of(0.155, 0.086) are obtained utilizing a solution-processible fluorescentπ-conjugated dendrimer G0. The highest efficiency reaches 5.3 cd A-1.
By doping G0 with phosphorescent dyes, Ir(mppy)3 or Ir(piq)2acac,
efficient green and red OLEDs have been developed with a success.
OLEDp - 24L

High-Efficiency Phosphorescent Orange OLED with
Double Emission Layers
J.-H. Jou, K.-Y. Tseng, C.-H. Chiu, W.-B. Wang, Y.-M. Lai
Nat. Tsing Hua Univ., Taiwan

A highly efficient orange organic electrophosphorescent device wasfabricated by using double emission layers of 2,7-Bis(9-carbazolyl)-9,9spirobifluorene and 4,4’-Bis(9-carbazolyl)-biphenyl as hosts and both
doping 4 wt% orange emitter, tris(2-phenylquinoline)iridium(III).
Efficiency of 29.5 lm/W at 100 cd/m2 was obtained by adjusting theemission layers thicknesses at 19 nm and 5 nm, respectively.
OLEDp - 25L

Sunlight-Style Color-Temperature Tunable OLEDs
H.-C. Wang, J.-H. Jou, M.-H. Wu, S.-M. Shen,
S.-Z. Chen, S.-H. Chen, C.-R. Lin, Y.-L Hsieh
Nat. Tsing Hua Univ., Taiwan

We demonstrate a series of man-made lighting device of organic lightemitting diodes (OLEDs) capable of yielding sunlight-style illumination.
The resulting color-temperature ranges between 2300 and 8200 K, ormuch greater, depending on the number of employed carriermodulating-layer, fully covering those of the entire daylight at different
times and regions.

Author Interviews
18:00 – 19:00

129

OLED

High-Efficiency Blue Dendrimer for Full Color FlatPanel Displays

Thursday

December 10

Workshop on 3D/Hyper-Realistic
Displays and Systems
Thursday, December 10
13:20 - 16:20

3F Foyer

Poster 3Dp: 3D/Hyper-Realistic Display Systems
3Dp - 1

3D/Hyper Realistic Display Systems as Futuristic
FacadesN. Y. Abo-Moussallam
Helwan Univ., Egypt

Image become more realistic and more interactive, that is because
many new Systems in produce and display images. The paper
discusses the applications which evolving utilizing of 3D/hyper realistic
Display systems as a futuristic façade In the Field of Environmental
Decoration.
3Dp - 2

Evaluation of 3D Displays in Terms of Literacy
Learning
H. Ikeshita(Yamazoe), T. Kawai, M. Ishii*, H. Yamagata*,
K. Niinuma*, Y. Ono*, M. Miyao**
Waseda Univ., Japan*Bandai Namco Games, Japan**Nat. Ctr. for Child Health & Dev., JapanThe authors have developed a literacy learning system for children with
developmental dyslexia.We compared the comprehensibility of 3D
characters presented on a depth fused 3D display and on a fractionalview display. These results indicate that a fractional view display canmake the structure of large characters understandable.
3Dp - 3

Stereoscopic View Image Generation Based on the
Horopter
J.-H. Jung, Y. Kim, S. Kim, B. Lee
Seoul Nat. Univ., Korea

In the human vision, the stereoscopic displays have the depth distortion
problem because of the horopter. We propose a method for view image
generation for stereoscopic display based on the horopter. The method
is depth remapping process using the horopter curve of each depth
plane.

130

Thursday
3Dp - 4

December 10
Using Psychometric Method to Find the Optimal
Disparity on Stereoscopic Display System
J.-H. Su, C.-H. Juan, Y.-C. Jian*, C.-N. Mo**, M.-C. Fu**,
J.-C. Lun**
Nat. Central Univ., Taiwan*
Nat. Taiwan Normal Univ., Taiwan**Chunghwa Picture Tubes, Taiwan

In this study authors used psychophysical methods to gauge theoptimal parameters for 3D perception in a multi-view display. A rapid
method was developed to acquire disparities to accommodate thespecifications of a certain monitor.
3Dp - 5Using Large-Size 2D Displays to Create 3D HyperRealistic See-Through Experiences
C. Yuan
Sharp Labs. of America, USA

3Dp - 6

Multispectral Polarization Analysis of Circular
Polarizer Stereoscopic 3D Display
P. Boher, T. Leroux, T. Bignon, V. Collomb-Patton
ELDIM, France

Polarization based stereoscopic 3D display is characterized bymeasuring the polarization state of its light emission versus angle andwavelength using Fourier optics viewing angle instrument. In depth
analysis of the results allow full characterization of its stereoscopic
properties and the origin of its main imperfections.
3Dp - 7

Evaluation Method of Residual Image Caused by
Liquid Crystal Reponse Delay for Frame-Sequential
Stereoscopic Display
A. Sakai, A. Hayashi, T. Kometani, H. Ito
Eizo Nanao, Japan

Residual image caused by slow response of LC panel is a big problem
in development of frame-sequential stereoscopic display. Therefore, toestablish an evaluation method of residual image is very important. We
devised a quantitative evaluation method.

131

3D

This paper describes a novel approach for creating hyper-realistic 3D
see-through experiences on large-size 2D displays. Viewers moving infront of the display can observe real-time updated ultra-high-resolution
images which appear originating from different parts of a virtual 3D
world placed behind the display.

Thursday
3Dp - 8December 10
A Glasses-Free Multi-View 3D Monitoring System
S.-C. Yen, T.-C. Shen
Chunghwa Picture Tubes, Taiwan

Based on barrier panel technology that precisely aligns left and righteye images simultaneously, these displays offer true glasses-free 3Dviewing without any optical aids. The real-time multi-view monitoring
system has the distinct advantage of providing a perfect and instantspatial image.
3Dp - 9Distortion in Liquid-Crystal Varifocal Lens forVolumetric Three-Dimensional Display
K. Kikuchi, T. Inoue, H. Yamamoto, S. Suyama
Univ. of Tokushima, JapanWe evaluate distortion of 3-D image at different focal length of liquidcrystal (LC) varifocal lens. Volumetric 3-D image is constructed by using
LC varifocal lens. As a result, 3-D image using LC varifocal lens has asmall difference in distortion compared with distortion without LC
varifocal lens.
3Dp - 10

Continuous Control of Depth of Field Using
Stereoscopic Lens-Tilt Imaging
N. Kaneko, S. Suyama, H. Yamamoto
Univ. of Tokushima, JapanTo provide images that are easily viewable on large stereoscopic
display, we propose a method of continuously controlling depth of field
by lens-tilt configurations. The depth of field of stereoscopic cameras isanalyzed and demonstrated.
3Dp - 11

Converting 2D Outdoor Photographs to Stereoscopic
3D Images Based on Image Analysis
P.-L. Sun, J.-Y. Huang*Nat. Taiwan Univ. of S&T, Taiwan*Shih Hsin Univ., Taiwan

A method to generate stereoscopic 3D images from typical outdoor
portrait photographs is proposed. It first segments a photo into major
image elements and then assigns reasonable depth to each of theregions. Relief-like depth is assigned to bodies to improve theirnaturalness.

132

Thursday
3Dp - 12

December 10
Optical Ray Control for Orthoscopic/Pseudoscopic
Image Conversion
J. Hong, K. Hong, S.-W. Min*, B. Lee.
Seoul Nat. Univ., Korea*Kyung Hee Univ., Korea

We propose a novel optical system that is capable of orthoscopic/
pseudoscopic image conversion. The system is composed of three steplens arrays. With carefully designed parameters, it converts target
object into pseudoscopic image with reversed depth. The quality of
resultant image was improved than two lens array system because of
reduced power loss and crosstalk.
3Dp - 13

Withdrawn

3Dp - 14High Resolution Autostereoscopic 3D Projection
Display with Spatially Divided Iris Plane Shutter
T. Ishinabe, T. Kawakami, N. Takahashi, T. Uchida

3D

Tohoku Univ., Japan
We proposed the novel autostereoscopic 3D projection display with aspatially divided iris plane shutter.
The stereo images are time
sequentially sent to the viewer’s positions by iris shutter. This display
has advantages of the capability of multi-view images, 2D/3D
switchable, high resolution, no crosstalk between left and right viewing
zones.
3Dp - 15GPU Implementation of Signal Processing in a 3D
Image System with Multi Vision Imaging andWavefront Reconstruction
T. Kurahashi, K. Nitta, O. Matoba
Kobe Univ., Japan

Signal processing in a 3D image system with multi vision capturing andwave front reconstruction is implemented on a Graphic Processing Unit.
We present the processing for area based matching and triangulation in
the GPU. It is confirmed that the GPU is effective for the proposedsystem.
3Dp - 16L

Lobe Analysis of Integral-Type 3D Display Based on
Luminance Profiles
M. Tsuboi, T. Horikoshi
NTT DOCOMO, Japan

We propose a methodology to analyze the lobe profile of integral-type
3D display based on the luminance profile. By using proposed method,
the area of lobe, which causes pseudoscopy and decrease of image
quality, can be assessed quantitatively considering both crosstalk andoverlap.

133

Thu./Fri.

December 10/11

3Dp - 17L

Perceived Depth Change by Decreasing Visual
Acuity in a Dominant Eye on Binocular Stereoscopic
Imaging
T. Inoue, H. Yamamoto, S. Suyama
Univ. of Tokushima, Japan

Perceived depth of 3-D image is found to decrease continuously tosingle-eye level, when image blurring of a dominant eye is increased.
We evaluate perceived depth change by blurring an image of adominant eye on binocular stereoscopic imaging. Perceived depth ismeasured using method of adjustment.
3Dp - 18L

A Development of Glass-Less Wide-Viewing Angle
3D LCD Monitor Driving Using Eye-Tracing Method
Y. Hong, S. B. Kwon*, K. S. Min*, S.-H. Park*, J. Ying,
S. Seo*, D. Jeong*
Hoseo Univ., Korea*
Ndis, Korea

A display system that don’t need special glass to see 3D images is a
useful technology. Conventional 3D monitor don’t have a large viewing
angle. We have developed a wide-viewing 3d LCD monitor driving
system by controlling barriers.

Friday, December 11
9:00 - 9:05

ZUIYO

Opening
Opening Remarks
9:00
I. Yuyama, Utsunomiya Univ., Japan
9:05 - 10:25

ZUIYO

3D1: 3D Display Image
Chair:
Co-Chair:
3D1 - 1:
9:05

J.-Y. Son, Daegu Univ., Korea
T. Mishina, NICT, Japan
Invited Integral 3D Television: A Real-Time Imaging
System Based on Integral Photography
M. Okui*, J. Arai*, M. Kawakita*, F. Okano*,***NHK, Japan**NHK Eng. Service, Japan

Integral photography is highly effective at allowing observers to see
natural and realistic 3D images without any special glasses. We havebeen making continuous research into integral 3D television based on
integral photography. The paper reports a progress in recent years on
the development of the prototypes.
134Friday
3D1 - 2:
9:25

December 11
Invited 3D-TV: Are Two Images Enough? How Depth
Maps can Enhance the 3D Experience
C. Vazquez, W. Tam, F. Speranza
Commun. Res. Ctr., Canada

For 3D-TV viewing the two images provided by stereoscopic imaging
systems offer very little control on the perceived 3D experience.
However, depth maps allow for improved depth visualization, throughdisparity customization and new view-point generation.
3D1 - 3
9:45

Switchable 3D/2D Display Using LC GRIN Lenticular
Lens
C. H. Chiu, C. W. Chen, C. H. Shih, W. M. Huang
AU Optronics, Taiwan

Switchable 3D/2D displays using LC GRIN lens with low Xtalk were
fabricated. By optimizing LC material parameters, patterned ITO,
relationship between lens cell and image cell, Xtalk of less than 5% for
2-view was achieved.
A Novel Real-Time 2D to 3D Conversion TechniqueUsing Depth Based Rendering
M.-C. Kao, T.-C. Shen
Chunghwa Picture Tubes, Taiwan
A faster algorithm of generating depth map of 2D image has beendeveloped by grayscale analyzing, and spatial relative setting. This
novel technology was successfully implemented in our 26” and 37”
Barrier-type, 4-view, 3D LCD.
----- Break -----

10:40 - 12:00

ZUIYO

3D2: 3D Display & Acquisition
Chair:
Co-Chair:
3D2 - 1:
10:40

I. Yuyama, Utsunomiya Univ., Japan
M. Hashimoto, NTT, Japan
Invited Ray-Based Acquisition and Reproduction of360-degree 3D Images
T. Yendo, T. Fujii*, M. P. Tehrani, M. Tanimoto
Nagoya Univ., JapanTokyo Inst. of Tech., Japan*

We introduce a cylinder-shaped 3D display that allows viewers to see
3D images from 360-degree and a novel 3D image acquisition system.
The acquisition system acquires multiview images from all horizontal
directions around an object with narrow view interval, which the display
needs as light ray data.

135

3D

3D1 - 410:05

Friday
3D2 - 2
11:00

December 11
Viewing Zone Interpolation for Multi-View 3D
Displays Using Depth Fused 3D (DFD) Effect
M. Date, Y. Andoh, H. Takada, Y. OhtaniNTT, JapanA DFD display consists of a stack of two transparent emitting screens. It
can produce motion parallax for small change of observation angle.
Applying such stacked structure to multi-view 3D displays, density ofviewing zone can be reduced. We confirmed it by experiment andcalculation.
3D2 - 3
11:20

An Interactive Zoetrope for the Animation of Solid
Figurines and Holographic Projections
L. Smoot, K. Bassett, S. Hart*, D. Burman*
Disney Res., USA*
Holorad, USA

We describe an interactive zoetrope that can animate holographic
images, solid figurines, or other still-frame images. Unlike previous
zoetropes, it is capable of aperiodic, interactive behavior. For example,
we have used it to animate a talking character’s mouth in real time inresponse to human speech.
3D2 - 4
11:40

Robust Pattern Matching Paradigm for Multi-View
Imaging
S. Gurbuz, S. Yano
NICT, JapanA fundamental approach of stereoscopic image formation for glassesfree autostereoscopic displays is to utilize parallel or toed-in multicameras, and pre-process the multi-view images before feeding them toa display system. In this paper, we describe a novel pattern matchingparadigm for alignment of multi-view images captured by multi-camera
configurations.
----- Lunch -----

13:20 - 14:40

ZUIYO

3D3: 3D Display Performance (1)Chair:
Co-Chair:136

H. Ujike, AIST, JapanS. Yano, NICT, Japan

Friday

December 11

3D3 - 1:
13:20

Invited Accommodation and Vergence in Natural and
Virtual Environments
T. Mihashi*,**, M. Kobayashi*, T. Fujikado***Topcon, Japan**

Osaka Univ., Japan

We will discuss problems of accommodation, vergence, and blur in a
virtual environment and introduce the methods to measureaccommodation, vergence, pupil diameter, and aberrations.
3D3 - 2
13:40

Dependence of Displayed Image Resolution on
Displayed Depth and Observer’s Position in
Autostereoscopic Displays
T. Saishu, K. Taira, R. Fukushima, Y. Momonoi,
M. Kashiwagi, Y. Hirayama
Toshiba, Japan

3D3 - 3
14:00

Factors for Crosstalk
J.-Y. Son, M.-C. Park*, Y. Vashpanov**, D.-S. Lee,
S.-H. Kim, G. Volodymyr
Daegu Univ., Korea*Korea Inst. of S&T, Korea**

Hanyang Univ., Korea

The crosstalk in the multiview 3 dimensional imaging system depends
on discrepancy amount in the design parameters of the system. The
crosstalk appears not even between immediate view images but alsowith the next view images, when there are large discrepancies between
actual parameter values and the designed.
3D3 - 4
14:20

An Image Processing Method for the Elimination of
the Ghost Image and Improvment of the Image
Quality in Stereoscopic Display
M.-C. Tsai, C.-W. Chen, C.-H. Shih, W.-M. Huang
AU Optronics, Taiwan

We disclose a image processing method to eliminate the light leakageof stereoscopic display from the signal for the other eye. This Method
can reduce ghost image on stereoscopic display and improve 3D image
quality.
----- Break -----

137

3D

We evaluated the dependence of displayed image resolution on
displayed depth and observer’s position in autostereoscopic 3D
displays. In discrete viewpoint type displays, depth dependence does
not appear as long as observer’s position is correct. In continuous
viewpoint displays, depth dependence appears, but observer’s position
dependence is small.

Friday

December 11

15:00 - 16:20

ZUIYO

3D4: 3D Display Performance (2)Chair:
Co-Chair:
3D4 - 1:
15:00

C. Vazquez, CRC, Canada
M. Hashimoto, NTT, Japan
Invited Development in Performance Characteristics
of 3D Displays: Ergonomic Approach
H. Ujike*,*2, S. Uehara*,*3, G. Hamagishi*,*4, K. Taira*,*5,
T. Koike*,*6, C. Kato*,*6, T. Nomura*,*7, T. Horikoshi*,*8,
K. Mashitani*,*9, A. Yuuki*,*10, K. Izumi*,*11,
Y. Hisatake*,*12, N. Watanabe*, Y. Nakano*,*13*Japanese Ergonomics Nat. Committee, Japan
AIST, Japan*3NEC LCD Techs., Japan*4Epson I. D., Japan*5
Toshiba, Japan*6Hitachi, Japan*7Sharp, Japan*8
NTT DOCOMO, Japan*9Sanyo Elec., Japan*10Mitsubishi Elec., Japan*11
3D Consortium, Japan*12Toshiba Mobile Display, Japan*13YOSH Consultancy, Japan*2

To achieve Image Safety for 3D displays, it is important how todetermine qualified viewing space, especially for autostereoscopic
displays. For the space, we, here, introduce discussions of motion
parallax smoothness and image blur, which are closely linked tocrosstalk issues and “continuous/discrete views” of multi-view
autostereoscopic displays.
3D4 - 2
15:20

Measurement for Viewing Space and Image
Resolution of Enhanced Integral Photography 3D
Display
T. Koike, H. Sakai, K. Utsugi, C. Kato, M. Oikawa,
M. Yamasaki
Hitachi, Japan

We have measured and analyzed the viewing space and the image
resolution of a superposed integral 3D display with multi projectors. The
3D display is with full parallax feature, thus the viewing space is very
complicated. We use computer vision and computational geometry
techniques to measure the complicated viewing space.

138

Friday
3D4 - 3
15:40

December 11
Polarized Based Stereoscopic 3D Display
Characterization Using Fourier Optics Instrument
and Computation in the Observer Space
P. Boher, T. Leroux, V. Collomb-Patton, T. Bignon
ELDIM, France

A method to characterize polarization based stereoscopic 3D displays
using Fourier optics viewing angle measurements is proposed.
Luminance measurements in the full viewing cone across the two
glasses filters are used to calculate contrast for each eye and combined
3D contrast. Direct comparison with auto-stereoscopic 3D displays
becomes possible.
3D4 - 4
16:00

Stereoscopic Viewing Space Analysis Based on
Optical Measurements for Two-View and Multi-View
Stereoscopic Displays*Japanese Ergonomics Nat. Committee, Japan*2

Seiko Epson, Japan*3Sanyo Elec., Japan*4NEC LCD Techs., Japan*5

Hitachi, Japan*6NTT DOCOMO, Japan*7Mitsubishi Elec., Japan*8

Toshiba Mobile Display, Japan*9Toshiba, Japan*10AIST, Japan

This paper presents an analysis of the stereoscopic area of glassesfree, two-view and multi-view 3D displays where the viewer can see fullscreen stereoscopic images free from 2D and pseudoscopic images
anywhere in the screen.

Author Interviews
16:20 – 17:20

Call for Papers

Special Section
on Electronic Displays
IEICE Transactions on Electronics
Submission Deadline: Feb. 26, 2010
http://ny7084.rie.shizuoka.ac.jp/eid/top-e.htm
139

3D

G. Hamagishi*,*2, K. Mashitani*,*3, S. Uehara*,*4,
T. Koike*,*5, T. Horikoshi*,*6, A. Yuuki*,*7, N. Watanabe*,
Y. Hisatake*,*8, K. Taira*,*9, H. Ujike*,*10

Wednesday

December 9

Workshop on
Applied Vision and Human Factors
Wednesday, December 9
13:20 - 14:40

ZUIYO

VHF1: Moving Image Quality
Chair:
Co-Chair:T. Kurita, NICT, JapanT. Wake, Kanagawa Univ., Japan

VHF1 - 1
13:20

Perceived Sharpness for Different Moving-Edge
Profiles on LCDs
X. Li, W. Song, Y. Zhang, G. San, K. Teunissen*,
I. Heynderickx**
Southeast Univ., China*
Philips Consumer Lifestyle, the Netherlands**Philips Res. Labs. & Delft Univ. of Tech., theNetherlands

Novel techniques to improve the LCD motion portrayal may result in theperception of irregularly shaped moving-edge profiles. Perception
studies show that the perceived sharpness can be predicted by
combining two parameters: one related to the edge slope and the otherrelated to the over/under-shoot part of the edge profile.
VHF1 - 2
13:40

Analysis of Factors Affecting Moving Picture
Performance of Display Considering Fast Motion andHigh-Resolution Content
I. Kawahara*,***Panasonic, Japan**Advanced PDP Dev. Ctr., Japan

Factors affecting moving picture performance including hold time,
device response, and persistency of illuminant were analyzed
quantitatively by using spatial resolution as a common reference scale.
MTF-based analysis proved to be more efficient than response-timemeasurement considering fast motion or high-resolution contents, being
sensitive to essential difference of waveforms.

140

Wednesday
VHF1 - 3
14:00

December 9
Correlation of Color Aberration and MPRT in the Flat
Panel Display
J. Hanne, S. A. Park, J. W. Jang, M. J. Lim, H. H. Shin
LG Display, Korea

To search for a simple method to characterize color aberration occurredin the moving picture for the flat panel display, the correlation of color
aberration and MPRT values was investigated. Two different plasma
displays which show strong, or weak color aberration were analyzed.
Thus, it was found that the strength of color aberration can be describedby different MPRT values of R, G, and B colors.
VHF1 - 4
14:20

Optimal Overdriving Look-up Table Based on thePerceived Image Quality for The LCD TV Module
J.-H. Hahm, H.-I. Baek, J.-U. Kwon, M.-C. Byun,
J.-W. Lee, H.-M. Moon, H.-H. Shin
LG Display, Korea

The relations of the OD values and the degree of the perceived OD
artifacts have been studied by the subjective evaluation. Throughout
multiple subjective evaluations and statistical analysis, OD look-up table(LUT) minimizing OD artifacts can be derived. Consequently, the 120HzLCD TV module having both fast response time and minimum OD
artifacts can be fabricated.

VHF----- Break -----

15:00 - 16:30

ZUIYO

VHF2: Dynamic Range and Gray Scale Expression
Chair:
Co-Chair:I. Heynderickx, Philips Res. Labs., the Netherlands
K. Masaoka, NHK, Japan

VHF2 - 1:
15:00

Invited High Dynamic Range Image Appearance
A. Yoshida
Sharp, JapanAs the need for high dynamic range (HDR) technology has increased,knowledge of the human visual system (HVS) has been actively
introduced in computer graphics besides HDR technology development.
In this paper, we present a brief review over researches on HDR and
HVS-based image processing models.

141

Wednesday
VHF2 - 2
15:30

December 9
Novel Method for Digital Image Enhancement
M. Chen, W. Zhang, G. Qiu*
LED Syss., Hong Kong*
Univ. of Nottingham, UK

In this paper, we proposed a novel method for digital image
enhancement by both global brightness adjustment and local contrast
enhancement. Compared with other methods of image enhancement,
our method provides optimized brightness and more local details withfew artifacts.
VHF2 - 3
15:50

Study of Improving the Gradation Quality of Displays
Receiving Noise-Added Signals
N. Nakano, A. Nagase, M. Asamura, J. Someya,
H. Sugiura
Mitsubishi Elec., JapanWe developed the new gradation expansion algorithm for displays. We
confirmed that gradation could be corrected effectively even over video
picture signals on which noise that made wrong processing with theconventional method was superposed.
VHF2 - 4
16:10

Display Panel Measurement Using Dark Sphere andSpectrophotometer Calibration by a Double
Integrating Sphere Reference Light Source
T. Matsumoto*,**, S. Kubota*, T. Shimura*, S. Haga**,
T. Nakatsue**, J. Ohsako***Univ. of Tokyo, Japan**Sony, Japan

We calibrated the spectrophotometer using a double integrating spherereference light source, and made measurements in the ultra low
luminance range of displays using a dark sphere to suppress theinfluence of the surround.
----- Break -----IDW Best Paper Award
This award will go to the most outstanding paper
selected from those presented at IDW ’09.
The 2009 award winners will be announced on the
IDW website: http://www.idw.ne.jp/award.html
142

Wednesday

December 9

16:40 - 18:00

ZUIYO

VHF3: Display Human Factors
Chair:
Co-Chair:T. Wake, Kanagawa Univ., Japan
K. Tomizawa, Sharp, Japan

VHF3 - 1
16:40

Comparison in Sharpness Evaluation Performance
between Improved Conventional Methods andCooperative Vision-Model-Based Method
T. Matsui, T. Fujita
Gunma Univ., Japan

We clarified that the sharpness evaluation metric developed based on
the cooperative human vision model is superior in performance toconventional metrics and their improved ones. Judging from thedifference between them, this result suggests that the image observing
mechanism can be a factor of the vision-model-based method’s highperformance.
VHF3 - 2
17:00

Effect of Contrast Ratio Angular Pofile on Perceived
Contrast of LCDs
H.-I. Baek, J.-H. Hahm, J.-U. Kwon, M.-C. Byun,
H.-M. Moon, H.-H. Shin

The perceived contrast on the LCDs with different angular contrast ratio(CR) profile and front-view CR were subjectively compared. The
performance of the LCD having lower front view CR and broader
angular CR profile was found to show same degree of perceived CR
performance to the LCD having higher front view CR and narrower
angular CR profile.
VHF3 - 3
17:20

Optimal Value and Allowable Limits of Surface Hazeand Illuminance
Y. Hisatake*,**, S. Uehara*, K. Taira*,**, T. Koike*,**,
I. Kawahara**, S. Katoh*,**, N. Asai**, K. Takizawa**,
I. Takahashi*,**, G. Hamagishi*, N. Umedu*, H. Haga**,
T. Sumino**, K. Tomizawa**, A. Yuuki*,**, K. Yanagawa*,
M. Uchidoi*, K. Mashitani*, T. Miyazaki*, N. Watanabe*,Y. Nakano**Japanese Ergonomics Nat. Committee, Japan**JEITA, Japan

We studied optimal and allowable limits to the haze value of the TVpanel surface and illuminance for beautifulness and unwanted
reflection. Correlations between illuminance and evaluated scores forbeautifulness and unwanted reflection were opposite relation.

143

VHF

LG Display, Korea

Wed./Thu.
VHF3 - 4
17:40

December 9/10
Investigation of Legibility and Subjective Visual
Fatigue in Electronic-Paper Displays under Low
Ambient Illumination
Y.-T. Lin, S.-L. Hwang, S.-C. Jeng*, R. J. Koubek**Nat. Tsing Hua Univ., Taiwan*
Nat. Chiao Tung Univ., Taiwan**Pennsylvania State Univ., USA

The intent of this study is to determine the minimum ambient
illumination requirement for legible electronic-paper display through themethod of character-search tasks. As electronic-paper display
technology applications gradually expand, the results in this study
indicated that the ambient environment for reading electronic-paper
display should exceed at least 62 lux.

Author Interviews
18:00 – 19:00

Thursday, December 10
9:00 - 12:00

3F Foyer

Poster VHFp: Applied Vision and Human Factors
VHFp - 1

Correction of Color-Matching Functions Using
Genetic Algorithm and Gaussian Approximation:
Discussion of Individuality
S. Ozaki, G. Ohashi, Y. Shimodaira
Shizuoka Univ., JapanThe objective is to examine the proposed correction method of colormatching functions for individuality. Color sensitivity was collected fromten subjects and individuality of color-matching functions was
examined. Results show that color-matching functions havedependence on individuality and color difference is small when using
corrected color-matching functions specialized with individuality.
VHFp - 2

Color Perception Characteristics for Spectrally Mixed
Colors in the Mesopic Condition
N. Ishikawa, G. Ohashi, Y. Shimodaira, Y. Shibata*,
H. Serizawa*
Shizuoka Univ., Japan*Koito Manufacturing, JapanThe sensitivity of a discrimination of spectrally different mixed colors
from a gray background was examined to clear color perception
characteristics in the mesopic condition. As a result, the sensitivity ofthe discrimination for colors mixed with blue is higher than that of mixed
light with other colors except blue.
144

Thursday
VHFp - 3

December 10
Study of Color Conversion Based on Matrix
Switching Method Exhibiting on the Three-Primary
Color LCD
B. S. Huang, Y. C. Wang, C. R. Sheu, Y. G. Fuh
Nat. Cheng Kung Univ., Taiwan

Matrix switching algorithm is used to study color conversion on the LCD.
We have succeeded in color conversion by checking characteristics ofspectrums between three-primary and four-primary colors. But, thebrightness of simulated four-primary color patterns must be multiplied
by a factor in order to consist with three-priamry color patterns.
VHFp - 4

High Efficient Gamut Mapping in xvYCC Space for
Wide Gamut Displays
P.-L. Sun
Nat. Taiwan Univ., Taiwan

Unlike most gamut mapping algorithms (GMAs) working in CIELAB
space, an xvYCC-based GMA for sRGB to wide gamut color mapping is
proposed. It features low computation cost and smooth color
distribution.
VHFp - 5

Investigation of Image Quality Evaluation Using
Psychophysical Methods

VHF

Y.-Y. Lai, C.-M. Tsai*, S.-S. Guan*
Taiwan TFT-LCD Assn., Taiwan*Nat. Yunlin Univ. of S&T, Taiwan
A psychophysical experiment was conducted to examine the differenceat each physical attribute by visual assessment. 10 standard images
with four trials in the experiment process included the assessment of
the image quality for lightness, chroma, hue angle, and contrast.
Results of ANOVA showed a significant effect of physical attribute.
VHFp - 6

Estimation of Overall Image Quality with the
Mahalanobis-Taguchi System Focusing on Gamma,
Maximum Luminance and Minimum Luminance
K. Sawada, G. Ohashi, T. Hoshino*, Y. Shimodaira
Shizuoka Univ., Japan*Hitachi, JapanA new method is proposed for evaluation of overall image quality using
image parameters on the basis of the Mahalanobis-Taguchi system inthe quality engineering. The image parameters are gamma, maximum
luminance and minimum luminance. Good relation between estimatedand subjective image quality is obtained.

145

Thursday
VHFp - 7

December 10
Ambient Contrast Ratio Measurement by Using
Sampling Integrating Sphere
S.-Y. Pan, S.-C. Lin, L.-C. Lin, K.-S. Wang, C.-C. Kao,
P.-C. Yeh, C.-Y. Lee
AU Optronics, Taiwan

To differentiate the ambient contrast ratio performance of different
surface-treated LCDs, the sampling-integrating sphere will be the betterway to simulate ambient light. We introduce the without-specular port
method to complement the insufficiency that with-specular-port method
can’t distinguish between different levels of only-haze-surface-treatedfilm type LCDs.
VHFp - 8

System Design of Ambient Light Compensation for
Flat Panel TV
J.-C. Huang, H.-S. Chen, J.-F. Lee
Nat. Taiwan Univ., Taiwan

A TV system can release the visual fatigue by automatically adjusting
LED luminance set onTV back. The light amounts emitted from LED
sets are adaptive to illumination and TV imagecontent according tobuilding the database of ambient light compensation. It’s expectedtohave a comfortable TV watching environment.
VHFp - 9

Mean Based Dynamic Range Separated Histogram
Equalization for Infrared Imaging System
B.-H. Hwang, G.-H. Park*, M.-R. Choi
Hanyang Univ., Korea*
Samsung Thales, Korea

In this paper, an effective contrast enhancement method for infrared
imaging system is proposed. Proposed method fixes the low frequency
histogram components as threshold level. And then reacquire thehistogram for histogram equalization. Experimental results show that
proposed method preserved naturalness of an image than conventional
method and computation complexity might be significantly reduced insoftware/hardware implementation.
VHFp - 10

Using Simulation and Human Vision Evaluation to
Illustrate Why “G-center” Pixel Unit Exhibiting theBest Image Quality on a Stripe Sub-Pixel LCD
Y. C. Wang, Y. C. Lee, C. R. Sheu
Nat. Cheng Kung Univ., Taiwan

We study the effects on rendering images with various RGB stripe subpixel arrangements. Simulation results show that different RGB
arrangements have significant difference on rendering images. Bothsimulation and human vision evaluation have proven that it obviously
shows that “G-center” sub-pixel arrangements have the best images.

146Thursday
VHFp - 11

December 10
A Lightweight Wide HMD by Separated Three
Displays for an Aging Society
T. Miyachi, S. Watanabe, J. Jantr, T. Suzuki*
Tokai Univ., Japan*Kanagawa Pref. Hiratsuka School for the Visually
Impaired, JapanWe developed a prototype of a light-weight three displays HMD (150inch display 2.5 m ahead)) for CCTV, digital camera, and electronicmagazine to enjoy the delightful mobility and examined ways to utilize it.
We found the synergy between universal designs and human.
VHFp - 12

Brightness Uniformity and Color Uniformity
Equalizing Method of LCD Panel Modules
Y. Bamba, Y. Suzuki, M. Kita
Eizo Nanao, Japan

Brightness uniformity and color uniformity of LCD panel modules
change with change of input color balance such as color temperature.
We propose brightness uniformity and color uniformity equalizing
method of LCD panel modules corresponding to any color balance.
VHFp - 13

Mura Grade Evaluation of Electronic Displays by
Visual Contrast

VHF

Y. Morimoto, Y. Takagi, T. Asano, J. Yao*, W. Liu*
Hiroshima Inst. of Tech., Japan*Fast, Japan
A method that can evaluate mura grades automatically has beendeveloped. The original image is filtered using the contrast sensitivity
function. The average stimulus value of visual contrasts is used toestimate the mura grades. The validity is shown by experiments using
real FPD monitors.
VHFp - 14

Quantification of Hot Spot Mura of LED Backlight
Based on Visual Contrast Thresholds
W.-J. Chang, Y.-P. Lan, H.-H. Hsu*
ITRI, Taiwan*Keio Univ., Japan

In this study, we used a calibrated CCD camera to capture the LED
backlight, and an analysis method based on the visual contrast
threshold was used to evaluate the hot spot. The profile, positions andsizes of hot spots can be easily defined and determined.

147

Thursday

December 10

VHFp - 15

A Quantitative Evaluation Method for Indistinct Muraof LED BacklightY. Masakura, T. Tamura, K. Nagamine*, S. Tomioka*,
M. Ueda*, Y. Shimpuku*
Tokyo Polytech. Univ., Japan*
Sony, Japan

We conducted an experiment that subjectively evaluated artificial
indistinct Mura images that simulated luminance non-uniformity of LED
backlights. It was revealed that three numerical indexes based on
measured luminance of Mura image would be significant for predicting
the subjective evaluation value of indistinct Mura.
VHFp - 16

Human Preference Based Metrics for Video Quality
on LCD Displays
S.-T. Kuo, K.-P. Chen, K.-N. Wu
ITRI, Taiwan

We designed a human preference based metrics for video quality on
LCD displays. According to the two alternative force choice (2AFC)
paradigm and Quest threshold finding algorithm, we can assess LCD
quality by human observers.
VHFp - 17

Studies of Human Vision Model on Image
Recognition
B.-W. Wu, Y.-C. Fang*, L.-S. Chang, S.-F. Wang*
Yuanpei Univ., Taiwan*Kaohsiung First Univ. of S&T, Taiwan

This study is based on the limitation of human eye recognition, of image
recognition through the experiment. Those aspects that have been
explored focus on human eye modeling, including creative model ofhuman eye, human vision recognition characteristics and various
mathematical modeling verify, thermal image modeling of human vision.
VHFp - 18L

Measurement of Cerebral Blood Flow Volume While
Viewing 3D Images
H. Isono, J. Yamaguchi
Nippon Inst. of Tech., Japan

In order to clarify the effects of 3D images on brain activity in humans,
we used near-infrared spectroscopy, which is capable of noninvasively
monitoring human brain activity, and measured cerebral blood flow
while subjects viewed a moving 3D image immediately after viewing amoving 2D image as a reference stimulus.

148

Thursday
VHFp - 19L

December 10
Virtual Histogram Equalization
H.-W. Kang, G.-H. Park*, M.-R. Choi
Hanyang Univ., Korea
Samsung Thales, Korea*

In this paper, Virtual Histogram Equalization (VHE) is proposed forcontrast enhancement. . VHE prevent the merging of low histogram
components while in the process of Histogram Equalization.
Experimental results show that proposed method suppresses side
effects such as detail loss or washed out appearance.
VHFp - 20L

From Luminance to Illuminance: The Evaluation ofColor Rendering on Reflective Display
Y.-H. Lu, C.-H. Li, C.-H. Tien
Nat. Chiao Tung Univ., Taiwan

An evaluating procedure has been proposed and demonstrated toreveal the impact of color appearance induced by ambient illumination
for reflective LCDs. The results showed that the colorimetricperformance of reflective LCD was strongly dependent on various LED
spectra and the CQS methodology was proper for evaluating LED
lighting.

13:20 - 15:00

VHF----- Lunch -----KAIHO

VHF4/DES4: Color (1)Chair:
Co-Chair:
VHF4/
DES4 - 1:
13:20

K. Sekiya, Tohoku Univ., Japan
T. Matsumoto, Sony, Japan
Invited Measuring Light and Color: An Introductory
Talk to Photometry
N. OhtaRochester Inst. of Tech., USA

Photometry is used for measuring light quantities based upon our
spectral luminous efficiency function established in 1924. In my talk, I
will describe the basis of photometry. I will also mention the limitation of,and the improvement of modern photometry.

149

Thursday

December 10

VHF4/
DES4 - 2:
13:50

Invited Extending Applications of Multi-Primary Color
LCDs
K. Tomizawa, K. Nakamura, S. Ueki, Y. Yoshida, T. Mori,
M. Hasegawa, A. Yoshida, Y. Narutaki, Y. Itoh,Y. Yoshida, M. Teragawa
Sharp, JapanWe developed a five-primary color (5PC) LCD which can reproduce
real-surface colors; however, multi-primary color LCDs have relatively
lower luminance forbright green’ than TV broadcasting standards.
This paper introduces new algorithms reproducing bright green andsimultaneously keep its fidelity in chromaticity. This indicates theextendibility of our 5PC LCD.
VHF4/
DES4 - 3
14:20

Image-Dependent Skin-Color Correction Technology
Based on Skin-Based Color SpaceY. C. Hsu, H. S. Chen
Nat. Taiwan Univ., Taiwan

A new automatic skin-color correction method for still image is
proposed. Skin-color areas in an image are extracted by skin-color
searching algorithm to find out critical color correction range which
determines parameters of modification coefficient function. Skin-color is
finally corrected by Gaussian distributed coefficients under LSN(Lightness/skin/non-skin) opponent color space.
VHF4/
DES4 - 4
14:40

Memory Color Detection and Enhancement for
Improved Television Picture Quality
H. Pan, X. Xu, J. Speigle, S. Daly
Sharp Labs. of America, USA

We propose a unified skin and blue sky color detection andenhancement method that simultaneously satisfies people’s opposing
color preference of skin and blue sky colors for wide color gamut TVs.
Psychophysical experiments and image/video experiments show thatthe proposed method improves picture quality with more pleasing
rendition of skin and blue sky colors.
----- Break -----

150

Thursday

December 10

15:10 - 16:40

KAIHO

VHF5: Color (2)Chair:
Co-Chair:
VHF5 - 1:
15:10

N. Ohta, Rochester Inst. of Tech., USA
T. Matsumoto, Sony, Japan
Invited Preferred Reproduction of Natural Image
Content on Wide-Gamut Displays
I. Heynderickx*,**, R. de Volder***, D. Sekulovski*,
M. Murdoch**Philips Res. Labs., the Netherlands**Delft Tech. Univ., the Netherlands***Tech. Univ. Eindhoven, the Netherlands

The preferred chroma for rendering natural images containing one or
multiple hues is determined in two experiments. The results clearlyshow the need for wide-gamut displays. Preference in chroma isaffected by hue, content and individual. A hue dependent chroma
extension factor can cope with the dependency in hue and individual,
but not with the content dependency.
VHF5 - 2
15:40

Performance Evaluation of Gamut Extension
Techniques for Multi-Primary Display

VHF

T. Y. Park, G.-H. Kim, H. H. Son, H. K. Hong, M. Lim,H. H. Shin
LG Display, Korea
To deal with color pleasantness in wide gamut displays, gamut
extension is inevitably required. This paper presents therefore gamut
extension methods via inverse gamut mapping techniques in order tofaithfully reproduce the natural color of an object in multi-primary display(MPD).
VHF5 - 3
16:00

Reduction of Mobile Display Color Variation by
Increasing Color Gamut and Optimizing LED
Selection
S.-L. Yang, S.-C. F. Jiang, C.-H. Shih, W.-M. Huang
AU Optronics, Taiwan

Base on our color variation evaluation model anaylzation, there areseveral different factors would affect color varition in the mobile display.
According to our result, application of increase of color gamut andnarrow LED color distribution can reduce more than 20% color variationin mobile display.

151Thursday
VHF5 - 4
16:20

December 10
Accurate Color Reproduction Method for Displays
N. Hosoe, Y. Amano, Y. Shimodaira
Shizuoka Univ., Japan

Proposed method makes dozens of conversion matrices by taking into
account the color tracking phenomenon and effects of input luminancelevels to color difference. As a result, the proposed method achieved
the same color conversion accuracy as that of the previous researchwith a half the number of matrices.
----- Break -----

16:50 - 18:15

KAIHO

VHF6: Video System and Image Quality
Chair:
Co-Chair:C. Clippingdale, NHK, Japan
Y. Shimodaira, Shizuoka Univ., Japan

VHF6 - 1
16:50

Flicker Visibility Dependence on Viewing Distanceand Light-Emission Duty Ratio in a TV Field
M. Ogawa, T. Shiga
Univ. of Electro-Commun., Japan

Visibility of flicker is measured for various viewing distance and lightemission duty ratio in a TV field. It is found that more than 82% duty
ratio is necessary to suppress the flicker when viewing distance is 3H,
refresh rate is 60Hz, and luminance is 300 cd/m2.
VHF6 - 2
17:10

Subjective Quality Assessment for Temporal DownSampling High Frame-Rate Video
Y. Bandoh, S. Takamura, H. Jozawa
NTT, Japan

In order to display high frame-rate video on current display devices, theymust be sub-sampled. When high frame-rate video is sub-sampled,
sub-sampling with constant interval is not always needed. This study
evaluates the relationship between subjective image quality of subsampled sequence and flexibility in selecting the frames to be subsampled.
VHF6 - 3L
17:30

Flicker Perceptions for Wide-Field-of-View and HoldType Image Presentations
M. Emoto, M. Sugawara
NHK, JapanTo study the flicker perception while viewing displays with a wide field ofview (FOV), we measured the critical fusion frequency (CFF) withvarying duty ratios and FOVs. We show CFF dependence on duty ratio
and FOV. It is important to optimize the trade-off between flicker andmotion blur.
152

Thursday
VHF6 - 4L
17:45

December 10
Influence of Viewing Distance and Size of TV on
Visual Fatigue
K. Sakamoto*,**, S. Aoyama*, S. Asahara*, A. Kimura**,K. Yamashita**, A. Okada***Panasonic, Japan**

Osaka City Univ., Japan

We carried out experiments to investigate the influence of viewing
distance and TV screen size on visual fatigue using 17-inch, 42-inch
and 65-inch PDP displays. Our results suggest that the optimum
viewing distance lies between 165 and 220 cm and might not follow thecurrently recommended relative distances (3H).
VHF6 - 5L
18:00

Designing a Wide-Gamut System Colorimetry for
UHDTV
K. Masaoka, Y. Nishida, M. Sugawara
NHK, Japan

We discuss the requirements for a wide-gamut system colorimetry for
UHDTV. The parameter values are derived based on theserequirements. We show that a display with three monochromatic
primaries can cover the gamut of Rec. 709, RP 431-2, and Adobe RGB
as well as most real object colors.

VHF

Author Interviews
18:00 – 19:00

Supporting Organizations:Technical Group on Information Display, ITE
Technical Committee on Electronic Information Displays, Electronics
Society, IEICEEVENING GET-TOGETHERWITH WINE
Tuesday, December 8, 2009
18:00–20:00
Room “FOUNTAIN” (2F)World Convention Center Summit(Sponsored by Merck Ltd., Japan)
See page 9 for details
153

Thursday

December 10

Workshop on Projection and Large-Area
Displays, and Their Components
Thursday, December 10
9:00 - 10:20

TENYO

LAD1: Digital Cinema and Signage
Chair:
Co-Chair:E. Buckley, Light Blue Optics, USA
H. Kanayama, SANYO, Japan

LAD1 - 1
9:00

A Large Ultra High Resolution Tiled Display System:
Architecture, Technologies, Applications, and Tools
S. Deshpande, C. Yuan, S. Daly, I. Sezan
Sharp Labs. of America, USA

We describe architecture, new applications and their enabling
technologies of SharpWall - a tiled display system with 10Kx4.5K
resolution and 177-inch diagonal size - which we have built as aprototype to research future large-size ultra-high-resolution single panel
displays.
LAD1 - 2
9:20

High Power Discharge Lamp for Large Screen
Projection Display
H. Ogawa, R. Obama, T. Ogura
Panasonic, JapanThe market of large screen projection display needs high power
discharge lamps with high-intensity and long-life. We have realized
them by making bulb-thickness thin. In addition, this burner could be
used in a wide power range to make it possible to control bulbtemperature easily.
LAD1 - 3
9:40

Ultra-Short Throw Distance Laser Light Source
Projector with Highest Brightness
T. Abe, M. Okuda, M. Maeda, S. Matsumoto, T. Ando,
K. Tsuji, R. Amano, M. Inoue, T. Ikeda, H. Kanayama
Sanyo Elec., Japan

Newly developed ultra-short throw distance Laser light source projector
has achieved the highest brightness and the smallest throw ratio. This
projector is composed of fiber rod illumination optics, mirror-lens hybrid
projection optics and Laser Color Processing. These technologies allow
achievement of high efficiency, ultra-wide angle projection and desirable
color reproduction.

154

Thursday
LAD1 - 4
10:00

December 10
Investigations of a Color Gamut Required forPreferred Color Reproduction by Using a Super-WideColor Gamut Projector
M. Kanai, T. Kitano*, A. Minabe*, K. Fukasawa**, T. Abe*
Seiko Epson, Japan*
Shinshu Univ., Japan**Epson R&D, USA

This paper describes subjective evaluation of a color gamut required fora preferred color reproduction on a laser projection display. As a result,the boundary of the required color gamut is found in low lightness
colors. It’s expected that the color gamut is correlated with the pseudooptimal colors.
----- Break -----

10:40 - 12:15

TENYO

LAD2: Pico Projectors
Chair:
Co-Chair:
LAD2 - 1:
10:40

K. Li, Wavien, USA
T. Hayashi, 3M, Japan
Invited The Requirements of Cellular Phone
Embedded Small Projector, and the Use Scene
M. Ota, M. Murata, T. Kaneda, M. Yasuo
NTT DOCOMO, Japan

LAD2 - 2:
11:05

Invited Challenges with Embedding a Pico Projector
into a Mobile Phone
J. Dennis
Texas Instrs., USA

Mobile phone displays limit the enjoyment and sharing of the content
now available on your mobile phone. Projection technology may enrich
the user experience and allow for sharing of this content to small
groups. This paper will review the challenges associated withembedding a Pico Projector into a mobile handset.

155

LAD

We introduce the use scene of various cellular phones with small
projector, and the requirements of cellular phone embedded small
projector.

Thursday
LAD2 - 3:
11:30

December 10
Invited 3M Mobile Projection Technologies
E. Shiba, P. Watson, M. Bellanca, A. Ouderkirk,
K. LaRock*, Z. Yun*, S. Saxe*, P. Doug*, T. Hayashi**
3M, Singapore*
3M, USA**3M APAC, Japan

We report current and future 3M mobile projection technologies,
including the newest MM200 projection engine. In this report, we
explain how the design is to achieve 10lumen per 1 Watt, introduce 3M
branded projectors, and discuss future developments.
LAD2 - 4
11:55

Low Component Count Waveguide-Based PicoProjector for Cell-Phone Applications
K. Li
Wavien, USA

The next generation of cell phones will have integrated projectors suchthat large images can be projected and shared. Similar to the cell
phone cameras, in order to have a high adoption rate, the cost have to
be low, which requires low component count and simple construction.
To achieve low cost, the most important factor is to use a small imager
chip, which increase the illumination requirements….
----- Lunch -----

13:20 - 14:30

TENYO

LAD3: Laser Projector and Its Components
Chair:
Co-Chair:S. Deshpande, Sharp Labs. of America, USA
K. Takeda, Seiko Epson, Japan

LAD3 - 1:
13:20

Invited Green Laser Technology for Display
Application
S. Kurimura*,***NIMS, Japan**Waseda Univ., Japan

Technologies for compact and high power green lasers directed to laser
display will be reviewed, which has made a significant progress for last
several years mainly due to the evolution of wavelength-conversion
devices and optics.

156

Thursday
LAD3 - 2
13:45

December 10
Application of the Optical MEMS Scanner“ECOSCAN” for Pico Projector
E. Kawasaki, H. Yamada, H. Hamanaka
THE NIPPON SIGNAL, Japan

Our MEMS optical scanner ECOSCAN is a device which contributes todownsizing, lost costs, and high-performance of pico projectors. We
mount two scanner chips in a single package for raster scanning. Eachchip has a vibration monitor output, which can be used to control thelight source etc.
LAD3 - 3:
14:05

Invited Rear-View Virtual Image Display Using
Holographic Laser Projector
E. Buckley, D. Stindt*, L. Lacoste*, R. Isele**,P. Radojkovic**
Light Blue Optics, USA*
Light Blue Optics, UK**BMW AG, Germany

Light Blue Optics’ holographic laser projection technology can create avirtual image display consistent with integration into rear-view mirrors.
By combining the visual accommodation and reaction time benefits of ahead-up display with the ability to present safety-critical information in arear-view mirror’s field of view, safety benefits can result.
----- Break -----

15:00 - 16:20

TENYO

LAD

LAD4: Speckle Reduction Technologies
Chair:
Co-Chair:

H. P. Kuo, Hewlett Packard, USA
H. Kikuchi, NICT, Japan

LAD4 - 1
15:00

Development of Moving Screen System for Laser TV
S. Okagaki, N. Watanabe, D. Echizenya, M. Inoue,
T. Nomura, A. Michimori, T. Sasagawa, H. Sugiura
Mitsubishi Elec., JapanThe moving screen system is described. We have developed Laser TVthat uses three-primary-color lasers for the light source. The moving
screen system has been developed for Laser TV to decrease
scintillation which is caused by coherency of laser.

157

Thursday
LAD4 - 2
15:20

December 10
On the Optical Configurations of Speckle Killers for
Laser Projection Displays
T. Kawakami, K. Sekiya, H. Sato, Y. Kuratomi, B. Katagiri,
Y. Suzuki, T. Uchida
Tohoku Univ., Japan

We show that the speckle killer systems for laser projection displays, inwhich small diffusers are rotating, can be classified in three.
Wediscuss each characteristics in relation to magnification ratio of the
diffuser to the screen.
We also show the observed results on a
prototyped laser projection display.
LAD4 - 3
15:40

On the Effect of Small Moving Diffusers to theSpeckle Reduction in Laser Projection Displays
H. Satoh, K. Sekiya, T. Kawakami, Y. Kuratomi,
B. Katagiri, Y. Suzuki, T. Uchida
Tohoku Univ., Japan

We have investigated the effect of a moving diffuser placed at the
conjugate point of a micro-display to reduce speckle reduction in laser
rear projection displays, and have found and verified that the opticalmagnification ratio and diffusion angle of the diffuser are closely related
to the speckle reduction ratio.
LAD4 - 4
16:00

Consideration on the Principle of Speckle Noise
Observed on Laser Projection Displays
Y. Kuratomi, K. Sekiya, H. Sato, T. Kawakami, B. Katagiri,
Y. Suzuki, T. Uchida
Tohoku Univ., JapanA new analysis of speckles, based on the granularity of speckle patterns
in laser light source projections, indicates that granularity has animportant effect on speckle noise, and generating finer speckles inside
the projection system is a key to better speckle reduction.
----- Break -----EXHIBITION
12:00–18:00
10:00–18:00
10:00–14:00

Wednesday, Dec. 9, 2009
Thursday, Dec. 10, 2009
Friday, Dec. 11, 2009

4F FoyerWorld Convention Center Summit
Free admission with your registration name tag.
158

Thursday

December 10

16:40 - 18:00

TENYO

LAD5: Projection Components
Chair:
Co-Chair:J. Dennis, Texas Instrs., USA
S. Shikama, Setsunan Univ., Japan

LAD5 - 1
16:40

High Contrast Front Projection System for Large
Screen Displays Suppressing Reflection of Ambient
Light
R. Sato, M. Ooike, B. Katagiri, Y. Suzuki, M. Kano,
T. Uchida
Tohoku Univ., Japan

We proposed a novel front projection screen by diffusing only projected
light towards the viewing angle range and reflecting ambient lighttowards the other angle ranges. With this system, we propose to realize
a high quality large screen front projection display with high contrast
ratio even in a bright room.
LAD5 - 2
17:00

A High-Contrast See-through Screen
H. P. Kuo, L. Hubby, H. Ng, A. Jeans, R. Garcia,
K.-H. Tan, I. Sobel, R. Elder, B. Culbertson, A. Brakovsky
Hewlett Packard, USA

We present a high-contrast see-through projection screen. The screen
allows nearly 100% utilization of illumination from an oblique-angle
projector and achieves a ~10x improvement in contrast compared to a
Daylite projection screen.
Direct Measurement of Vcom Voltage in LC Panels
D. Cuypers, A. V. Calster*, H. D. Smet*IMEC vzw, Belgium*
Ghent Univ., Belgium
Even for high-end LCOS panels, the compensation voltage required forflicker-free operation (Vcom) slowly shifts with time. Detection of thecorrect compensation is usually done optically. In this paper, a method
to directly measure the needed Vcom voltage on the cell itself ispresented, eliminating the need for the optical detection.

159

LAD

LAD5 - 3
17:20

Thu./Fri.
LAD5 - 4
17:40

December 10/11
White LED Lamp with Recycling for Projection
Applications
K. Li
Wavien, USA

This paper described a white LED lamp with recycling such that only
one white LED is needed for the projector, which is easier to cool andhave less number of components. In addition to in-creasing the output
lumens of the system, the recycling increases the output of red color,which is normally insufficient in standard white LEDs. Output of over
230 lumens has been achieved us-ing a 50 W white LED....

Author Interviews
18:00 – 19:00

Friday, December 11
9:00 - 12:00

3F Foyer

Poster LADp: Projection
LADp - 1

Withdrawn

LADp - 2

A Single Panel LCoS Microdisplay for Mobile
Projectors
Y. S. Do*, K.-J. Yang*, G.-J. Lee*, J. Kim*, S.-J. Sung*,
Y.-H. Lee*,**, H.-J. Chung**, C.-G. Roh*,**, B.-D. Choi**

Daegu Gyeongbuk Inst. of S&T, Korea**Kumoh Nat. Inst. of Tech., Korea

A 0.55” SVGA LCoS microdisplay for the applications to mobile
projectors was fabricated. Twisted nematic liquid crystal was used as
the light switch layer. The prepared the LCoS panel with field sequential
color driving scheme represented γ-corrected 256 gray scales. The
preparation and characteristics of single panel TN-LCoS were
described.

Supporting Organizations:Technical Group on Information Display, ITE
Laser Display Technology Research Group, Optical Society of Japan160

Wednesday

December 9

Workshop on Electronic Paper
Wednesday, December 9
13:20 - 13:25

TENGYOKU

Opening
Opening Remarks
13:20
A. Suzuki, Ricoh, Japan
13:25 - 14:40

TENGYOKU

EP1: Electrophoretic Displays
Chair:
Co-Chair:EP1 - 1:
13:25

A. Suzuki, Ricoh, Japan
M. Tsuchiya, E Ink, Japan
Invited History of Electrophoretic Displays andProposal of a Novel Cell Structure for Lateral Particle
Movement Display Devices
I. OtaFree, Japan

History of EPD (Electrophoretic Display), especially the early
development stage in Matsushita Electric (now Panasonic Corporation)is reviewed. Lateral electric field type EPD should be more studied inorder to realize the bright full color reflection type display and theimproved cell structure is proposed.
EP1 - 2:
13:50

Invited Bright Color Electronic Paper Technology andApplications
K.-M. Lenssen, M. van Delden, M. Mueller, L. StofmeelPhilips Res., the Netherlands

161

EP

Bright color electronic paper technology based on in-planeelectrophoresis is very suitable for application in non-emissive Digital
Surfaces, like electronic skins, eco-skins and electronic wallpaper foratmosphere creation. Aimed at these applications simplified electrodegeometries and a novel concept for built-in gray levels have beendeveloped.

Wednesday
EP1 - 3:
14:15

December 9

Invited Progress in Subtractive Color Electrophoretic
Displays
A. Henzen
iRex Techs., the Netherlands

Full-color capability is generally recognized as the enabling factor for epaper. In recent work, the preferred route for color electronic paper was
proposed to be subtractive color. Now, the first practical results in sucha color display based on an in-plane electrophoretic effect will bepresented.
----- Break -----

15:00 - 16:20

TENGYOKU

EP2: Particles Moving Displays
Chair:
Co-Chair:EP2 - 1:
15:00

H. Arisawa, Fuji Xerox, Japan
M. Higuchi, NIMS, Japan
Invited Challenge to Color Electronic Paper Based on
Particle Control Technologies
T. Kitamura
Chiba Univ., Japan

We have proposed three types of novel Color Electronic Paper
technologies based on the movement of white, black and color
particles. These are based on an electrophoretic particle movement
and movement of particle in the air space.
EP2 - 2
15:25

Monolayer Rotating Ball Display
H.-S. Lee, H.-Y. Cha, S. Lee, J.-B. Kwak, K. Chae,
H. Lee, Y. W. Lee, C. H. Lee, Y. Oh
Samsung Electro-Mechanics, Korea

Optically anisotropic rotating balls were disposed in a monolayer, andcontrollably close packed with respect to one another in the monolayer.
The monolayer configuration provided high brightness and improved
contrast with better electrical and optical features in comparison withthe conventional rotating ball display.
EP2 - 3
15:45

Dynamical Behaviors of Charged Particles in
Horizontal Switching Electrophoretic Cell
J.-H. Yeo, S.-W. Kim, G.-D. Lee
Dong-A Univ., Korea

We propose a modeling for calculating the dynamical behaviors of acharged particle depending on the patterned electrode in horizontal
switching electrophoretic cell and calculate the interaction between
electrical field and particle. As a result, we can calculate particle
mobility in horizontal switching electrophoretic cell.
162

Wednesday
EP2 - 4L
16:05

December 9
Versatile Contents Viewer with Loose-Leaf Active
Matrix QR-LPD Sheets
H. Honda, K. Kitamura, H. Maeda, K. Nishimura*
Dai Nippon Printing, Japan*KDDI R&D Labs., Japan

Versatile contents viewing system is developed with detachable flexible
e-paper sheets and display driver module that can stream contentssuch as documents, still and moving image via mobile phone. 30 frame/
sec of streaming was achieved by highly stabilized AMOTFTs and fast
response speed of the QRLPD.
----- Break -----

16:40 - 18:00

TENGYOKU

EP3: LC Type Electronic Paper and Others
Chair:
Co-Chair:Y. Toko, Stanley Elect., JapanT. Fujisawa, DIC, Japan

EP3 - 1
16:40

300 cm-Length Flexible Cholesteric Liquid Crystal
Banner’s Metal Electrode Fabricated by Screen
Printing Technology
S. H. Lee, C. W. Wu, J. H. Liao, Y. Y. Chang
ITRI, Taiwan

This study is to build a workable and stable jointless screen printing
technology to form the metal electrode on the 300cm-length flexible
cholesteric liquid crystal banners which is a thinner, lighter, good
flexibility and saving power display.
EP3 - 2
17:00

Color Laser-Addressing Simple Structure Roll to Roll
Electronic Papers

EP

H.-Y. Chen, C.-C. Liang, M.-H. Hsieh, C.-L. Chin,
C.-K. Ho, J.-Y. Su
ITRI, Taiwan
This paper proposes a simple structure laser-addressing color R2Relectronic paper. The proposed electronic paper is verified by UV laser
and its reflected light wavelength can be shifted more than 140nm fordisplaying color images.

163

Wed./Thu.
EP3 - 3L:
17:20

December 9/10
Invited Electrically-Switched LC color for Electronic
PapersS.-Y. Lu, L.-C. Chien
Kent State Univ., USA

We demonstrate a polymer-stabilized cholesteric liquid crystal, where
the reflected color can be electrically-switched to reflect a different
color. A second electrically switched color based on polymer-stabilized
blue phase liquid crystal is also demonstrated. These switchable color
devices of are color filters and polarizers free which is suitable forelectronic papers.
EP3 - 4L
17:45

Legibility Investigations of the BiNem e-Reader
Display
J. Osterman, R. Nordström*, L. Madsen, M. Irzyk,
J. Angel, F. Leblanc
NEMOPTIC, France*Uppsala Univ., Sweden

The legibility of the 2-polarizer BiNem e-reader display has been
investigated using task-oriented tests and subjective measures. The
results show that the BiNem display is comparable to the E-Ink Vizplex
EPD display used in the Amazon Kindle 2. An advanced 1-polarizer
BiNem mode for increasing the paper-like appearance is proposed.

Author Interviews
18:00 – 19:00

Thursday, December 10
9:00 - 10:05

TENJU

EP4: Electrowetting and Electrochromic Displays
Chair:
Co-Chair:EP4 - 1:
9:00

T. Kitamura, Chiba Univ., JapanS. Maeda, Oji Paper, Japan
Invited Bistable Electrowetting Displays with High
Reflectivity and Large Aperture Ratio
K. Blankenbach, M. Jentsch, A. Bitman*, F. Bartels*,
J. Rawert**, D. Jerosch**Pforzheim Univ., Germany*Bartels Mikrotechnik, Germany**Advanced Display Thec., Germany

Electrowetting displays have some unique features, however only the
ADT approach is bistable. This paper deals with a new 3D pixel layout
enabling high aperture ratio and a novel method for grey level
reproduction based on partial filling of pixel. White reflectance forambient light is raised beyond state-of-the-art.
164

Thursday
EP4 - 2
9:25

December 10
Device Application of Organic-Metallic Hybrid
Polymers for Electronic Paper
M. Higuchi*,***NIMS, Japan**JST, Japan

Organic-metallic hybrid polymers are formed via complexation ofbis(terpyridine)s with metal ions such as Fe(II) or Ru(II). We found thatthey have excellent electrochromic properties. Electrochromic solidstate devices have been successfully fabricated by using thesepolymers.
EP4 - 3
9:45

High Speed Passive Matrix Electronic Paper Using
Leuco Dye
T. Higuchi, M. Suzuki, W. Weng, T. Fukuoka,
T. Shimomura, M. Omodani*
Funai Elec. Advanced Appl. Tech. Res. Inst., Japan*
Tokai Univ., JapanWe developed imaging device, “Dynamic ECD” utilizing
electrochromism of leuco-dye and attained quick response, highcontrast, low cost compared to current reflective display. In this talk, we
present basic structure of device and imaging quality, especially image
stability.
----- Break -----

13:20 - 16:20

3F Foyer

Poster EPp: Electronic Paper
EPp - 1

Electrowetting-Based Optical Deflector
H.-H. Chen*,**, C.-C. Lin*, Y.-T. Li**, C.-C. Fu**
*ITRI, Taiwan

EP**Nat. Tsing Hua Univ., Taiwan

We propose a new idea to fabricate an electrowetting based opticaldeflector (EBOD), which bases on a SOG (Silicon on Glass) wafer and
MEMS technologies. The EBOD combines two kinds of liquid, silicon oil
and DI water. The light tuning mechanisms are based on electrowetting
phenomena.

165

Thursday
EPp - 2

December 10
Analysis of the Microfluid Movement Behavior underDifferent Driving Scheme in Electro-Wetting Display
K.-L. Lo, Y.-S. Huang*, C.-Y. Chen*, W.-Y. Cheng,
S.-W. Kuo, H.-H. Lee, Y.-H. Tsai, W.-W. Chiu, R.-L. Sun,
P.-J. Su, C.-W. Wang, J.-W. Shiu, P.-P. Cheng, Y.-C. Liao,
Y.-C. Chen, Y.-H. Chiu
ITRI, Taiwan*Nat. Chiao Tung Univ., Taiwan

The microfluid movement behavior in electro-wetting display (EWD)
affects the contrast ratio, response time and the optical uniformity of
EWD panels. The simulation and experimental results of microfluid
movement behavior under different driving scheme and different
electrode patterns were presented in this paper to improve the optical
performance of EWD.
EPp - 3

New Electrochromic Polymer for Electronic Paper
Y. Kondo, T. Ootake, H. Tanabe
Kuraray, Japan

Electrochromic(EC) type e-paper is attracted with colorfulness andclearness. We have been researching and developing material for EC
type e-paper. We developed new EC polymer for e-paper. Our EC
polymer is suitable for printable electronics, for instance, ink-jet, screen
print, and so on. We introduce our developing technologies.
EPp - 4

Preparation of the Narrow-Dispersed Microcapsules
Containing Electronic Ink : Influence of Surfactant
and Stirring Rate
Y.-J. Park*,**, C. A. Kim*, K.-S. Suh*, S.-Y. Kang*,
S.-M. Park***

Elect. & TeleCommun. Res. Inst., Korea**Pusan Nat. Univ., Korea

We investigated the parameters to control the electronic ink
microcapsules which contain the electrophoretic pigment particles
suspension. The effect of surfactant in aqueous polyelectrolyte
solutions, the agitation speed, and pH transition profile are typicalparameters to control the microcapsule size and size distribution.
EPp - 5

A Novel Electronic Ink Using the Core-Shell TypeParticles Prepared in a Non-Polar Media
H. Yoo*,**, C. Kim*, K. Suh*, S. Kang*, S. Park***Elect. & TeleCommun. Res. Inst., Korea**Pusan Nat. Univ., Korea

In this study, we prepared two types of core-shell particles for electronic
ink. Black particle were prepared by disperse polymerization in nonaqueous media. The above high mobility black particle suspension
expects the low operating voltage and high speed in the electrophoretic
display.
166

Thursday
EPp - 6

December 10
Measurement of Short-Term Memory of Human forStudying the Common Difficulty of Working on a
Display
S. Inoue, Y. Koibuchi, M. Omodani
Tokai Univ., Japan

We suppose rather long holding time for our short-term memory
requested by working on a display is a dominant reason of difficulty withcomplicated tasks on a display. This supposition is agreed by measured
performances of identifying tasks between two pages with parallel /non-parallel conditions and measured forgetting curves.
EPp - 7

Withdrawn

EPp - 8L

Development of Fast Moving Ball Actuator Mode for
Reflective Electronic-Paper Displays
H. Choi, H. Pakr, D. Lee, B. Bae*, W. Kim**, B. Kim**,
M. Hong
Korea Univ., Korea*Hoseo Univ., Korea**

Dongjin Semichem, Korea

We described the basic operation mechanism of our novel reflective
Electronic-Paper display, Fast Moving Ball Actuator (FMBA) mode[1] inthe horizontal switching system in fluid medium. The surface potential ofa ball can be controlled by contact open electrode and their locations
can be controlled by potential variation.
EPp - 9L

A Novel Bistable LCD Switching between Splayed
Twist and Reversed Twist States for Texture of
Molecular Orientation
R. Takahashi, Y. Toko*, S. Saito, T. Takahashi
Kogakuin Univ., Japan*Stanley Elec., Japan

167

EP

A Reversed-Twisted Nematic (R-TN) mode is applied to the bistable
LCD with a memory function. In the R-TN cell, the splayed twist state
and reversed twist state are able to coexist. The bistable switching isrealized due to the optimization of cell configuration and theimprovement of electrode structure.

Thu./Fri.

December 10/11

EPp - 10L

Solid State Phthalate Derivative-BasedElectrochromic Cell toward Full Color Display
SystemY. Watanabe, S. Tanaka, K. Nakamura, N. Kobayashi
Chiba Univ., Japan

Electrochromism (EC) is applicable to fabricate a new imaging device
because of its many superior characteristics.We studied electrochromic
properties of phthalate derivatives, which showed three primary colors
by electrochemical reaction, from a viewpoint of color electronic paper.
Solid state electrochromic cell with gel electrolyte has been
demonstrated.

Author Interviews
18:00 – 19:00

Friday, December 11
9:00 - 10:25

TENGYOKU

EP5: Driving Methods for Electronic Paper
Chair:
Co-Chair:N-S. Roh, Samsung Elect., Korea
G. Zhou, Philips Res., the Netherlands

EP5 - 1

Withdrawn

EP5 - 2
9:25

A Novel Asymmetric Driving Scheme for Rich Gray
Levels in Driving a Large-Area High-Resolution
Electrowetting Display
Y.-C. Chen, Y.-H. Chiu, C.-C. Liang, W.-Y. Lee,
W.-Y. Cheng, H.-Y. Chen
ITRI, Taiwan

Due to the PWM driving method has the gray-level limitation, this paper
proposed an asymmetric driving concept to increase the gray-level
number. The performance of the driving concept is successfully
validated on a 6 inch active matrix electrowetting display.
EP5 - 3
9:45

A Dynamic Gray-level Driving System for HotPluggable Roll to Roll Cholesteric LCD
C.-W. Sun, C.-C. Liang, H.-Y. Chen, T.-A. Chen,
P.-C. Yeh, C.-A. Ho, Y.-C. C. Chen, J.-Y. Su
ITRI, Taiwan

This paper develops a dynamic gray-level driving system for hotpluggable R2R Cholesteric LCD. Its performance is verified by
implementing a real e-Paper application of e-Badge. Satisfactory resultsof gray-level images and fast-updating rate are obtained.
168Friday

December 11

EP5 - 4
10:05

Speeding up Passive-Matrix Driven Electronic Paper
Update by Shrinking Multiline Addressing Data
S. Kaneko, M. Asakawa, R. Hattori, Y. Masuda*,
N. Nihei*, A. Yokoo*, S. Yamada*
Kyushu Univ., Japan*
Bridgestone, Japan

We discussed the speeding-up method in the updating time of Quick
Response-Liquid Powder Display (QR-LPD). We generated the shrunk
multiline addressing “lossless” data using the linearly dependence of animage data matrix. The generated data can reduce the update time byquarter compared with that of a conventional driving method.

Author Interviews
16:20 – 17:20

Supporting Organization:
The Imaging Society of Japan

EXHIBITION
12:00–18:00
10:00–18:00
10:00–14:00

Wednesday, Dec. 9, 2009
Thursday, Dec. 10, 2009
Friday, Dec. 11, 2009

4F FoyerWorld Convention Center Summit
EPFree admission with your registration name tag.

IDW Tutorial in Japanese
Tuesday, December 8, 2009
Room “TENRAN” (4F)
World Convention Center Summit
Detailed information will be announced in October at
http://www.sidchapters.org/japan/
169

Thursday

December 10

Workshop on
MEMS for Future Displays andRelated Electron Devices
Thursday, December 10
9:00 - 9:05

ZUIYO

Opening
Opening Remarks
9:00
M. Nakamoto, Shizuoka Univ., Japan
9:05 - 10:15

ZUIYO

MEMS1: Emerging Technologies
Chair:
Co-Chair:Y. Aoyagi, Ritsumeikan Univ., Japan
D. Bloom, Alces Tech., USA

MEMS1 - 1: Invited Quantum Dots in Lighting and Display: From
9:05
R&D to Product Launch
J. Ritter, P. Kazlas, Z. Zhou, M. Stevenson, C. Breen,
Y. Niu, I. Song, J. S. Steckel, S. Coe-Sullivan
QD Vision, USA
Quantum dot light emitting diodes (QLEDs) offer the promise of
exceptional color and efficiency at low cost of manufacture for display
and solid-state lighting applications. Recent progress in efficiency (>21lm/W at 325 nits) and lifetime (>10,000 hrs at 100 nits) demonstrates
the commercial potential of this technology.
MEMS1 - 2: Invited Challenge to Quatum Dot Display for Mobile
9:25
DeviceB. L. Choi
Samsung Elect., Korea
Colloidal quantum-dot light-emitting diodes (QD-LED) have recently
received considerable attention due to their ease of colour tunability,
high brightness and narrow emission bandwidth. In this talk, theprogress and possibility of QD application for mobile display will bepresented.

170

Thursday

December 10

MEMS1 - 3
9:45

Large-Scale Non-Contact Electric Field Sensor Array,
Fabricated by TFT
M. Ikeda, K. Nakamura*Free*Micronics Japan, JapanMEMS1 - 4
10:00

High Response Micromirror MEMS Displays UsingPZT Gratings
J. Moon, M. Nakamoto, K. Shiratori
Shizuoka Univ., Japan

Micromirror MEMS displays having 0.1 µsec response time have beendeveloped by piezoelectric diffractive gratings and dicing saw
fabrication method to realize high reliabilities and high response
characteristics for low cost and large area MEMS displays.
----- Break -----

10:40 - 11:45

ZUIYO

MEMS2: Displays and Imaging
Chair:
Co-Chair:J. Jang, Kyung Hee Univ., Korea
K. Maenaka, Univ. of Hyogo, Japan

MEMS2 - 1: Invited Flexible Array Sensors Based on Zinc Oxide
10:40
Nanowires for Touch Displays
S. M.-L. Pfaendler, M. E. Swanwick, A. R. Rachamim,
S. H. Dalal, P. Beecher*, S. E. Machin, P. Andrew*,
W. I. Milne, A. J. Flewitt
Univ. of Cambridge, UK
Nokia Res. Ctr., UK*

Recent efforts towards the fabrication of touch sensing systems arepresented, in which zinc oxide nanowire arrays are embedded in apolymer matrix to produce an engineered composite material. In the
future, these sensor systems will be fully flexible and multi-touch as
intended for Nokia’s ‘Morph’ concept device.

171

MEMS

Very large size device can be fabricated by TFT on glass as LCD. Thissensor device is new application of TFT which detect electric field
pattern through air gap scanning and consists of 7168 channels with
35µm pitch in liner as large size. Present its structure and results.

Thursday

December 10

MEMS2 - 2: Invited Power MEMS for New Services and
11:00
Environment
H. Kuwano
Tohoku Univ., Japan
Remotely controlled, or autonomous, monitoring systems such as thosein ubiquitous sensor networks need cost-effective and long-lifetime
energy supplies. This paper describes the power MEMS as a powerful
candidate that are expected to replace or supplement electrochemical
batteries in the fields of electrical communication and consumer
electronics.
MEMS2 - 3
11:20

Uncooled Infrared Radiation Focal Plane Array with
Low Noise Pixel Driving Circuit
R. Ueno, H. Honda, H. Funaki, K. Ishii, M. Ogata,
H. Kwon, H. Yagi, I. Fujiwara, K. Suzuki, K. Sasaki
Toshiba, Japan

We have analyzed the dominant noise sources in the driving circuit of
uncooled infrared radiation focal plane array fabricated on silicon on
insulator (SOI) substrate by 0.35 µm CMOS technology and bulkmicromachining, and optimized the design of constant current source
MOSFET and its driving condition.
MEMS2 - 4L
11:35

Color-Sequential Field-Emission Lamp for Advanced
Back Lighting in LCD
Y.-H. Song*,**, D.-l. Kim*, J.-T. Kang*, J.-W. Kim*,**,
J.-W. Jeong**Elect. & TeleCommun. Res. Inst., Korea**

Univ. of S&T, Korea

A color-sequential field emission lamp (FEL) was developed by using
printed carbon nano tube field emitters with an enhanced turn-off
driving method. The new driving greatly shortens the turn-off responsetime of field emission in the FEL panel, below 4 ms, which is applicable
to a color-sequential LCD.
MEMS2 - 5L

Withdrawn----- Lunch -----

172

Thursday

December 10

13:20 - 14:50

ZUIYO

MEMS3: Fundamental Components Process
Technologies 1
Chair:
Co-Chair:D. Pribat, Ecole PolyTech., France
S. Koizumi, NIMS, JapanMEMS

MEMS3 - 1: Invited Fabrication of Nonlinear Photonic Crystals
13:20
and Its Application to All Optical Switching
Y. Aoyagi, S. Inoue*
Ritsumeikan Univ., Japan*Kyushu Univ., Japan
Hetero structure non-linear photonic crystal is fabricated for the firsttime. The performance of this photonic crystal is analyzed and theapplication of the photonic crystal to high efficient second harmonics
and sum frequency generation of optical light and all optical switchingcircuit are demonstrated.
MEMS3 - 2: Invited Resonant Tunneling Effect in Organic
13:40
Superlattice Structure
J. Jang, T. J. Park, J. H. Kwon
Kyung Hee Univ., Korea
Superlattice structures were made with organic light emitting materials.
The current density-voltage characteristics of the organic superlattice
show a peak and a valley between 3 and 8 V, which is due to theresonant tunneling effect. The effect is discussed as a variation of layer
thickness.
MEMS3 - 3: Invited MEMS Integrated with Silicon Photonic Wire
14:00
Waveguides
A. Higo, H. Toshiyoshi, H. Fujita, Y. Nakano
Univ. of Tokyo, Japan
This paper presents design and theoretical analysis of a silicon opticalwaveguide modulator with an electrostatic micromechanical structure
actuated in the evanescent range. We observed a 330-nm MEMS
displacement and 7.4 kHz mechanical response on a 5-µm-wide and100-µm-long bridge at a voltage of 60Vpp.

173

Thursday

December 10

MEMS3 - 4
14:20

The Etching Characteristics for Texturing Crystalline
Silicon with Soft Mask
C. Wei, J.-M. Chen*, Y.-H. Chien, Y.-Z. Shih, J.-T. Lian*
Tatung Univ., Taiwan*Chunghwa Picture Tubes, Taiwan

Texturization made from anisotropic etching is able to minimize thereflectivity in solar cell. A soft mask etching characteristics isinvestigated based on high concentration potassium hydroxide withdifferent etching temperature and time. The stripping of soft mask is the
key for highly textured surface.
MEMS3 - 5
14:35

On the Texturization of Monocrystalline Silicon for
Reflection Reduction
C. Wei, J.-M. Chen*, Y.-H. Chien, Y.-Z. Shih, J.-T. Lian*
Tatung Univ., Taiwan*
Chunghwa Picture Tubes, Taiwan

A surface texturization method with soft etching mask is proposed. The
effect of mask size and etching conditions are investigated. A textured
surface whose average reflectivity less than 4% is fabricated withetchant concentration 30% KOH, etching temperature 70 °C and 20
minutes etching time.
----- Break -----

15:10 - 16:35

ZUIYO

MEMS4: Fundamental Components Process
Technologies 2
Chair:
Co-Chair:

M. Nakamoto, Shizuoka Univ., JapanT. Komoda, Panasonic Elec. Works, Japan

MEMS4 - 1: Invited MEMS-Type Switches Based on Carbon
15:10
Nanotube Arrays
D. Pribat, D. Dubuc, K. Grenier, S. Pacchini, T. Ricart,
C. Cojocaru
Ecole PolyTech., France
Because of their exceptional mechanical characteristics, carbon
nanotubes are materials of choice for MEMS applications. We shallpresent some recent results concerning the fabrication of radio
frequency switches based on arrays of carbon nanotubes. Various
approaches will be discussed, but emphasis will be put on randomarrays, which are easier to fabricate. Our first RF measurements will bepresented.

174

Thursday

December 10

MEMS4 - 2: Invited Efficient NEA Cathode Operation of Diamond
15:30
PN Junction
S. Koizumi, S. Kono*
NIMS, Japan*
Tohoku Univ., Japan

MEMS4 - 3
15:50

Integration of CNT-FEAs with MOSFET on Silicon
Substrate
N. Y. Bae, J. H. Ryu, H. E. Lim, B. T. Son, H. M. Oh,
J. Jang, K. C. Park
Kyung Hee Univ., Korea

An integration of CNT-FEAs grown with RAP process with MOSFET on
silicon substrate has been proposed. The structure is very useful for
active control of the emission current of CNT-FEAs. And shadow mask
was adapted to simplify process. The feasibility of the integration wasstudied.
MEMS4 - 4
16:05

Stable Environmental Stability of Robust Carbon
Nanotubes
H. M. Oh, J. H. Ryu, H. E. Lim, B. T. Son, N. Y. Bae,J. Jang, K. C. Park
Kyung Hee Univ., Korea

The stability of multi walled CNTs in high temperature and ambient air
were studied for environmental harsh condition application. Theserobust CNTs were annealed in air at 1,000 °C and show very stablestructural and electron emission characteristics. The structuralrobustness and stable electron emission of robust CNT were discussed.
MEMS4 - 5
16:20

Newly Developed Transfer Mold FEA Using Vacuum
In-Situ Fabrication and Evaluation Method
K. Eto, M. Nakamoto, J. Moon, K. Shiratori
Shizuoka Univ., Japan

Transfer Mold field emitter arrays have been fabricated and evaluatedusing the new vacuum in situ system to realize high efficient and reliable
field emitter arrays. The new vacuum in situ system is useful for theexact evaluation and fabrication of high reliable field emission displays
and lamps.
----- Break -----

175

MEMS

Highly efficient electron emission was observed from hydrogenterminated p-type diamond surface of pn junction. The emission
efficiency exceeded 1% even without specific design of the device forelectron emission.

Thursday

December 10

16:50 - 18:00

ZUIYO

MEMS5: Optical MEMS and Device Technologies
Chair:
Co-Chair:

H. Kuwano, Tohoku Univ., Japan
S. Coe-Sullivan, QD Vision, USA

MEMS5 - 1: Invited Mechanical Sensors and Actuators in MEMS
16:50
Technology
K. Maenaka
Univ. of Hyogo, Japan
In this paper, some MEMS sensors and actuators will be reviewed
including packaging technology, acceleration sensors and gyroscopes,
built-in actuators for vibratory sensors and optical scanners, in themarket and still in the research stage. Finally, fusion of a functional
material, PZT, with MEMS technology will be briefly discussed.
MEMS5 - 2: Invited MEMS-Based Polarization Light Modulator
17:10
Linear Array Microdisplay
D. Bloom, M. Bellis, C. DeMarco, J. Koehler, M. Leone,
R. YehAlces Tech., USA
We describe a new MEMS-based microdisplay technology for projection
display applications. The microdisplay modulates the polarization stateof light upon reflection from a micromechanical device array. The pixel
elements have a mechanical risetime and falltime of about 200
nanoseconds. This high speed response enables a scanned linear
array display architecture.
MEMS5 - 3
17:30

Extending Rotation Range Confirmed by Macro
Model of Gap-Closing Type Electrostatic Micromirror
Controlling Non-Linearity of Torsion Bar Spring
G. I. Shim, R. Mimoto, S. Kumagai, M. Sasaki
Toyota Technological Inst., JapanThe nonlinear spring for supporting the micromirror is examined toextend the controllable range in gap-closing type electrostatic
micromirror. Nonlinear spring is comprised by distorted torsion bar andparallel shift. As a result, nonlinear spring is confirmed to extend thecontrollable range through the novel method of macro model.

176

Thursday

December 10

MEMS5 - 4
17:45

A Mixed-Singnal Equivalent Circuit Model for MEMS
Digital Mirror
S. Maruyama, M. Mita*, K. Takahashi**, T. Takahashi,
H. Fujita, H. Toshiyoshi
Univ. of Tokyo, Japan*JAXA, Japan**

Toyohashi Univ. of Tech., Japan

Author Interviews
18:00 – 19:00

IDW ’10The 17th International Display Workshops
December 1-3, 2010
Fukuoka International Congress Center
Fukuoka, Japan
http://www.idw.ne.jp/

EVENING GET-TOGETHERWITH WINE
Tuesday, December 8, 2009
18:00–20:00
Room “FOUNTAIN” (2F)World Convention Center Summit(Sponsored by Merck Ltd., Japan)
See page 9 for details
177

MEMS

We report an equivalent circuit model for an electrostatic digital
microelectromechanical mirror by using electrical circuit simulator Qucs.
The mechanical equation of motion is converted into an equivalent
electrical circuit model. The device model is compatible with the mixedsignal simulation along with electrical circuits as well as other physicalmodels.

Wednesday

December 9

Workshop on
Display Electronic Systems
Wednesday, December 9
13:15 - 13:20

KAIHO

Opening
Opening Remarks
13:15
H. Okumura, Toshiba, Japan
13:20 - 14:40

KAIHO

DES1: Beyond the Standards
Chair:
Co-Chair:
DES1 - 1:
13:20

H. Okumura, Toshiba, JapanT. Yamamoto, NHK, Japan
Invited Reconstruction-Based Super-Resolution
Using Self-Congruency of Images
N. Matsumoto, T. Ida
Toshiba, Japan

A reconstruction-based super-resolution method applicable to a single
image is proposed. Using the property of images in which the same
intensity patterns appear successively around the edges, the pixels
near the edge are copied to other positions in the same image, and thesampling density becomes higher.
DES1 - 2:
13:40

Invited Structure Design for Backside IlluminatedUltrahigh-Speed CCDs
T. Arai, T. Hayashida, K. Kitamura, J. Yonai,
H. Maruyama, T. Etoh*, H. Kuijk**
NHK, Japan*Kinki Univ., Japan**DALSA, the Netherlands

A back-side illuminated ultrahigh-speed CCD was designed. A potential
profile for n-/p- structures was calculated using a three-dimensional
semiconductor device simulator. The thickness and concentration of then- and p- epitaxial layers were optimized to minimize transit time.

178

Wednesday
DES1 - 3:
14:00

December 9

Invited 4K/2K Layered Streaming of Super HighDefinition Video
T. Nakachi, T. Fujii
NTT, Japan

A 4K/2K layered streaming system for super high definition video, which
is based on the JPEG2000 coding technique, is introduced. Thissystem implements JPEG2000 multi-layer scalable coding technology.
Furthermore, we introduce the latest research on error correction andencryption schemes for layered video streaming.
DES1 - 4:
14:20

Invited Improvement of Motion Image Quality by
Using High Frame Rate from Shooting to Displaying

DES

Y. Kuroki
Sony, JapanTo improve motion-image quality, we developed prototypes of a 240fps
HD resolution camera, a 240fps 4Kx2K projector and a 240fps LCD
display. These high frame rate equipments bring extremely high qualityof motion image.
----- Break -----

15:00 - 16:15

KAIHO

DES2: Backlight Control
Chair:
Co-Chair:H. Sasaki, Toshiba, Japan
H.-S. Koo, Ming-Hsing Univ. of S&T, Taiwan

DES2 - 1
15:00

A Novel and Efficient Algorithm for Uniform of LED
Backlight
C.-M. Ko, C.-F. Hsu
AU Optronics, Taiwan

This paper introduces a novel and efficient algorithm used in luminance
uniformity calibration system (LUCS) which can improve the uniformityof LED backlight display. The system captures the luminance image andproduces compensation data based on the concept of light spreadfunction (LSF).
DES2 - 2

Withdrawn

179

Wednesday
DES2 - 6L
15:15

December 9Adaptive Dimming for Edge-Lit LCD Using Sorted
Sector Covering Method
T. Jung, M. Albrecht, C. Xu
Saarland Univ., Germany

The originally for direct-lit developed Sorted Sector Covering (SSC)
local dimming algorithm is adopted for edge-lit LCD. SSC uses thephysical viewing approach from LED to LCD, and is therefore also wellsuited for edge-lit structures. Combined with an image preprocessor weachieve high power saving at low hardware cost.
DES2 - 3
15:30

Sorted Sector Covering Algorithm with Condensed
Image Data and Soft Clipping Extension for Low-Cost
Local Dimming Processor and High Power Saving
M. Albrecht, C. Xu
Saarland Univ., Germany

A preprocessing step condensing the image has been inserted to the
local dimming processor, so the Sorted Sector Covering (SSC)
algorithm is capable to deliver clipping-free as well as soft-clipping
affected results. This leads to high power saving of 47% and asignificant reduction of the HW-complexity.
DES2 - 4
15:45

Multi Output Flyback Converter with Direct Energy
Transfer for LED Backlight
D. Cho, S. W. Choi, J. H. Kim, G. W. Moon, W. S. Oh*,
B. C. Yang*, T. S. Jang*
KAIST, Korea*Samsung LCD, Korea

Multi output flyback converters integrating direct energy transfer
technique are proposed. In the proposed system, overall power
efficiency can be improved. Moreover, the power rating ofsemiconductor components can be reduced. The comparison of power
efficiency between conventional and proposed system are presented
along with experimental-results for 46” LED TVs.
DES2 - 5
16:00

Ultra Low Power Display Module Using Solar Cell and
Adaptive Backlight Dimming TechniqueC.-F. Hsu, C.-C. Lai, T.-Y. Chang, S.-H. Liao
Wintek, Taiwan

The solar cell not only detects the ambient illumination but also provides
the power to save about 10% power consumption of display module.
The adaptive backlight dimming technique achieves about 30% powersaving and maintains image performance depending on image content
and the ambient illumination.
----- Break -----

180

Wednesday

December 9

16:40 - 17:50

KAIHO

DES3: Advanced Display Systems
Chair:
Co-Chair:
DES3 - 1:
16:40

Y. Kudo, Hitachi, Japan
A. Nagase, Mitsubishi Elec., Japan
Invited Temporal and Spatial Electronic Image
Formation for LCD’s
H.-P. ShiehNat. Chiao Tung Univ., Taiwan

Issues on temporal and spatial electronic image formation from power
consumption, image quality, and others will be presented.
Invited Backlight Adjustment, Image Compensation,
and Color Model Mapping for High Dynamic
Range(HDR) Spatial Modulated Display System
Y.-P. Huang, H.-P. Shieh, K.-G. Wang, L.-Y. Liao,
F.-C. Lin, Y.-K. Cheng
Nat. Chiao Tung Univ., Taiwan
For achieving high quality HDR Display System, three steps : Backlightadjustment, Real-time image compensation, and Color model mapping,have to be considered. Three novel methods were proposed, and had
been demonstrated on a 37” HDR-LCD with high contrast, wide color
gamut, less image distortion, and low power consumption.
DES3 - 3
17:20

Development of a 15M-Pixel Super High Resolution
Medical LCD
M. Hasegawa, Y. Tanaka, K. Ichikawa*
TOTOKU Elec., Japan*Kanazawa Univ., Japan

Title: Development of a 15M-Pixel Super High Resolution Medical LCD
We developed a new medical display by utilizing our independent subpixel drive (ISD) technology which realizes resolution of 15M sub-pixels
to accept higher resolution for digital mammography devices. This
technology was considered effective for the accurate depiction of thefine anatomical structures such as micro-calcifications of the
mammography.

181

DES

DES3 - 2:
17:00

Wed./Thu.
DES3 - 4
17:35

December 9/10
An Advanced Voltage Differential Signaling Interface
for Chip-On-Glass Applications of TFT-LCD
J.-P. Hong, J.-H. Choi, K.-I. Oh, K.-M. Kim, J.-H. Kim,
S.-H. Paik, K.-S. Kim, S.-W. Kim, H.-M. Song, J.-R. Shim,
J.-H. Na, D.-S. Kim, D.-K. Han, I.-Y. Jung*, G.-W. Do*,
H.-H. Lee*, J.-S. Kim*, K.-T. Moon*
Silicon Works, Korea*
LG Display, Korea

An intra-panel interface for Chip-On-Glass application is developed
using an Advanced Voltage Differential Signaling (AVDS). The AVDS
interface consists of the timing controller with transition compensatorand the column driver ICs. The operating frequency of system using the
AVDS interface is measured as 200MHz and it has low EMI
characteristics.

Author Interviews
18:00 – 19:00

Thursday, December 10
9:00 - 12:00

3F Foyer

Poster DESp: Display Electronic Systems
DESp - 1

PWM Limit Control Method and Block Contrast Ratio
for Local-Dimming Backlights
K. Fujiwara, H. Ichioka, T. Murai, K. Hashimoto,H. Murakami, K. Otoi, T. Yamamoto, M. Teragawa
Sharp, Japan

This paper presents our innovative PWM Limit Control Method (PLCM),
and a key parameter Block Contrast Ratio (BCR) for local-dimming
backlight system. PLCM is capable of achieving peak luminance andreducing motion blur, and BCR affects its image quality. There is a close
correlation between PLCM effect and BCR.
DESp - 2

A Fast Transient LED Driver with Dithering Dimming
D. Cho, S. W. Choi, J. H. Kim, G. W. Moon, W. S. Oh*,
B. C. Yang*, T. S. Jang*
KAIST, Korea*Samsung LCD, Korea

A conventional high dimming ratio LED driver requires a fast transient
power converter and an additional control circuit for PWM-dimming. In
this paper, the dithering controlled power converter without dimming
circuit is proposed. Experiment results verify that the proposed system
can achieve the dimming ratio 256:1 at 600Hz dimming frequency.

182

Thursday
DESp - 3

December 10
LED Control Signal Extraction by Using Multiple
Representative Values
W. Zhang, M. Chen, W. Niu, D. Huang
Hong Kong Appl. S&T Res. Inst., Hong Kong

Locally dimming backlight dramatically increases the contrast of LCD
display. However, such structure introduces new artifacts, especiallyhalo effect, which does not exist in traditional constant backlight display.
More sophisticated LED control algorithm is necessary to alleviate suchproblem.
DESp - 4

DES

Investigation and Reduction of Viewing Angle
Dependent Image Degradation Found in Adaptive
Dimming TechniqueS. Ogaki, K. Sakakibara, T. Shiga
Univ. of Electro-Commun., JapanA steep change in backlight luminance distribution due to theapplication of the adaptive dimming technique causes image
degradation around the boundary of the blocks when the LCD is viewed
from an angle. The degradation can be reduced by broadening theluminance distribution of a block.
DESp - 5

Spatial and Temporal Filtering for Local Dimming
Backlight Modulation
K. C. Tai, E. G. Chen, S.-T. Cho, C.-J. Chen, C.-L. Yang,
J.-P. Pang
InnoLux Display, Taiwan

We propose a method by using JND (just noticed difference) of
luminance as a parameter to design the temporal and spatial filter which
can be easily implemented in the hardware. The proposed technique inour experiment can effectively let the observers hardly to see these
artifacts in our experiment.
DESp - 6

A Novel Side Light LED Backlight Control for Large
Area Displays
C.-W. Su, C.-I Chiang, T.-Y. Li, C.-C. Chang, C.-L. Tsou
Chunghwa Picture Tubes, Taiwan

We have developed two new control technologies for side light LED
backlight. The Novel control technology called scanning control andlocal gray control. We also implement of highly integrated high powerLED module driving system which can develop a power management
system which can achieve power saving.

183

Thursday
DESp - 7

December 10
A Novel Concept of the Feedback Compensation for
RGB LED Backlight
C.-W. Su, C.-I Chiang, C.-L. Tsou
Chunghwa Picture Tubes, Taiwan

We have proposed a novel feedback system for RGB LED backlight. We
use linear CCD to replace color sensor to measure luminance and color
accuracy, and then feedback compensation for RGB LED backlight.
Besides, the linear CCD is cheaper than the color sensor that canachieve cost down.
DESp - 8

Withdrawn

DESp - 9

Feedback Based Power Management for LCD
Backlight Modulation for Guaranteed Average Levelsof Power Consumption
L. Kerofsky
Sharp Labs. of America, USA

Backlight modulation is effective at reducing average LCD power
consumption; average power depends upon the displayed content. We
proposed a power control algortihm to guarantee average backlight
power. Scene-Cut dependant temporal filtering minimizes artifacts.
Power control applications include response to a smart electricity grid orguaranteed battery life.
DESp - 10

The Method for Compensation Color-Shift on Color
Sequential LCD
W.-C. Tai, C.-C. Tsai, K.-T. Hu, H.-M. Chen, C.-L. Liu,
C.-N. Mo
Chunghwa Picture Tubes, Taiwan

Color sequential method demands fast response time by using liquid
crystal display. If the response time of the liquid crystal is not fastenough, the method causes color-shift artifact in its nature. This paper
discusses the color-shift effect by simulation data and proposes someexperiment data with TN mode display.
DESp - 11

Improvement of Dynamic Image Quality by a Novel
Overdrive Algorithm
Y. W. Fang, J. H. Lu, J. F. Chen, K. S. Wang, C. Y. Lee
AU Optronics, Taiwan

We developed a novel algorithm for obtaining the optimum overdrive(OD) gray level. The SV-CSF index is derived in the subjective
experiments. The novel algorithm is then established from the SV-CSF
index. By applying the novel OD level LUT (look-up table), the image
quality compared with conventional LUT is examined.

184

Thursday
DESp - 12L

December 10
HSI Color Space Based LED Backlight Dynamic
Control in 47-in. 120 Hz LCD TV
X. Chen, W. Liu, Y. Chen, M. Qiao
R&D Ctr. of Hisense Elec., China

We demonstrate a 47-inch 120Hz LED backlight LCD TV based on HSI
color space 2D local dimming technology. Both energy saving andcontrast improving have been achieved. The negative image quality
issues induced by local dimming such as partition halo, and video
brightness reduction have also been successfully addressed.
DESp - 13L

Charge Redistribution SC Digital-to-Analog
Converter for Large-Sized Flat Panel Displays

DES

Y. Lee, K.-S. Lee
Sun Moon Univ., Korea
This work describes an 8-bit charge redistribution switched-capacitor
DAC suitable for large-sized flat panel displays. The proposed DAC
uses only 4 binary weighted capacitors that both convert the MSB bits
and the LSB bits. Therefore, the area and power can be considerably
reduced with respect to conventional DAC circuits.
DESp - 14L

A Fast Pen Tracking Scheme for Bistable Passive
Matrix Color Cholesteric LCD
C.-C. Hsu, C.-J. Chen, C.-C. Liang, Y.-S. Chang,
C.-C. Wu, C.-Y. Chen
ITRI, Taiwan

To apply a real-time handwriting function on the passive matrix color
cholesteric LCD, a fast pen tracking scheme is proposed to pixel-wised
update the touched pixels but not frame-by-frame. The cumulative
driving scheme is applied to speed up the apparent response time. The
experimental results verify its feasibility and efficiency.
DESp - 15L

Adapted Block Matching Motion Estimation
Algorithm
S.-W. Choi, M.-R. Choi
Hanyang Univ., Korea

In this paper, we propose Adapted Block Matching Motion Estimation(ABMME) Algorithm by classifying blocks into two types (average
motion blocks and local motion blocks) and performing motion
estimation differently. Experimental results show that proposed method
prevents degradation of picture quality with low computation comparedwith conventional algorithms.

185

Thursday

December 10

13:20 - 15:00

KAIHO

VHF4/DES4: Color (1)Chair:
Co-Chair:
VHF4/
DES4 - 1:
13:20

K. Sekiya, Tohoku Univ., Japan
T. Matsumoto, Sony, Japan
Invited Measuring Light and Color: An Introductory
Talk to Photometry
N. OhtaRochester Inst. of Tech., USA

Photometry is used for measuring light quantities based upon our
spectral luminous efficiency function established in 1924. In my talk, I
will describe the basis of photometry. I will also mention the limitation of,and the improvement of modern photometry.
VHF4/
DES4 - 2:
13:50

Invited Extending Applications of Multi-Primary Color
LCDs
K. Tomizawa, K. Nakamura, S. Ueki, Y. Yoshida, T. Mori,
M. Hasegawa, A. Yoshida, Y. Narutaki, Y. Itoh,Y. Yoshida, M. Teragawa
Sharp, JapanWe developed a five-primary color (5PC) LCD which can reproduce
real-surface colors; however, multi-primary color LCDs have relatively
lower luminance for ‘bright green’ than TV broadcasting standards. This
paper introduces new algorithms reproducing bright green andsimultaneously keep its fidelity in chromaticity. This indicates theextendibility of our 5PC LCD.
VHF4/
DES4 - 3
14:20

Image-Dependent Skin-Color Correction Technology
Based on Skin-Based Color SpaceY. C. Hsu, H. S. Chen
Nat. Taiwan Univ., Taiwan

A new automatic skin-color correction method for still image is
proposed. Skin-color areas in an image are extracted by skin-color
searching algorithm to find out critical color correction range which
determines parameters of modification coefficient function. Skin-color is
finally corrected by Gaussian distributed coefficients under LSN(Lightness/skin/non-skin) opponent color space.

186

Thursday
VHF4/
DES4 - 4
14:40

December 10
Memory Color Detection and Enhancement for
Improved Television Picture Quality
H. Pan, X. Xu, J. Speigle, S. Daly
Sharp Labs. of America, USA

We propose a unified skin and blue sky color detection andenhancement method that simultaneously satisfies people’s opposing
color preference of skin and blue sky colors for wide color gamut TVs.
Psychophysical experiments and image/video experiments show thatthe proposed method improves picture quality with more pleasing
rendition of skin and blue sky colors.

DES

Author Interviews
18:00 – 19:00

Supporting Organizations:Technical Committee on Electronic Information Displays, Electronics
Society, IEICE
Technical Committee on Image Engineering, Information and
Systems Society, IEICE
Information Sensing Research Committee, ITE

Call for Papers

Special Section
on Electronic Displays
IEICE Transactions on Electronics
Submission Deadline: Feb. 26, 2010
http://ny7084.rie.shizuoka.ac.jp/eid/top-e.htm

BANQUET
Wednesday, December 9, 2009
19:30–21:30
Room “TENZUI” (4F)
World Convention Center Summit
See page 9 for details
187

Thursday

December 10

Topical Session on Flexible Displays
Thursday, December 10
9:00 - 9:10

TENZUI

Opening
Opening Remarks
9:00
H. Fujikake, NHK, Japan
9:10 - 10:35

TENZUI

FLX1: Flexible LC Technology
Chair:
Co-Chair:
FLX1 - 1:
9:10

H. Okada, Univ. of Toyama, Japan
T. Takahashi, Kogakuin Univ., Japan
Invited The Importance of Surface Alignment of
Bistable Nematic LCD
M. Kimura, J. B. Lias, K. Goda, Y. Azumai, T. Akahane
Nagaoka Univ. of Tech., Japan

The importance of surface alignment in bistable nematic liquid crystal
devices is reviewed. Firstly, some example of bistable LCD with tailoredalignment surface is discussed. Secondly, the image sticking problem incholesteric bistable LCD caused by the surface memory effect isinvestigated by ellipsometry.
FLX1 - 2
9:35

High Performance Full Color Cholesteric LCD with
Dual Stack Structure
K.-T. Chen, Y.-C. Liao, J.-C. Yang, J.-W. Shiu, Y.-S. Tsai,
K.-W. Wu, C.-J. Chen, C.-C. Hsu, C.-C. Wu, W.-C. Chen,
C.-L. Chin
ITRI, Taiwan

A 10.4-inch 100 ppi full color cholesteric liquid crystal displaywith highreflectivity and high resolution by dual stacking is demonstrated. Eachindividual ChLC panel is fabricated by the development of the pixelizedvacuum filling technique. The reflectivity of our panel is about 27% with
100 ppi resolution and 3-bit color.

188

Thursday
FLX1 - 3
9:55

December 10
Flexible Display for LC on Bare Plastic Substrate with
New Photosensitive Azodye Solution
L. Yao, A. Murauski, T. Du, Q. Yu, V. Chigrinov,
H. S. Kwok
Hong Kong Univ. of S&T, Hong Kong

Flexible optically rewritable twist nematic liquid crystal display based on
photoalignment technology with new solution of azodye material has
been demonstrated. The solution does not exhibit any breakage when it
is deposited on plastic substrate. It shows fine property of rewritable
and reproducibility of alignment quality for flexible display.
FLX1 - 4
10:15

Tilt-Angle and Spacer Distribution Density
Dependent LC Filling by Continuous Air-Extracting
TechniqueC.-M. Hsu, C.-J. Chan, W.-T. Wu, K.-S. Tsen*Southern Taiwan Univ., Taiwan*MIRDC, Taiwan----- Break -----

10:40 - 11:50

TENZUI

FLX2: Flexible Electronic Paper
Chair:
Co-Chair:
FLX2 - 1:
10:40

S. Maeda, Oji Paper, Japan
Y. Masuda, Bridgestone, Japan
Invited Innovative Applications of Flexible LCD
Technology
C.-C. Liao*,**, Y.-R. Lin*, C.-W. Kuo*, C.-Y. Chang**ITRI, Taiwan**Device 2.0, Taiwan

Many materials and manufacturing methods of flexible LCDs have beenstudied for last two decades. The market of flexible LCDs is narrow now.
In this paper, different techniques will be combined with flexible LCDs tocreate several new concept products to add values of flexible LCD andbroaden its market.

189

FLX

Cell filling of a flexible LCD using a continuous air-extracting technique
is demonstrated faster than with the traditional method. The cell fillingrate was found dependent on substrate tilt-angle and distribution
density of spacer with the optimized θ at 45° and Dsp = 360 pcs/mm2.

Thursday
FLX2 - 2:
11:05

December 10
Invited A 200 ppi All-Printed Organic TFT Backplane
for Flexible Electrophoretic Displays
K. Suzuki, K. Yutani, M. Nakashima, A. Onodera,
S. Mizukami, M. Kato, T. Tano, H. Tomono,
M. Yanagisawa, K. Kameyama
Ricoh, Japan

A 200 ppi all-printed OTFT backplane was fabricated with a channel
length of 5 µm and mobility of over 0.1 cm2/Vs by a surface energy
controlled Ink-Jet printing and several printing methods on plastic
substrate. A flexible electrophoretic display driven by the all-printed
OTFT backplane was successfully demonstrated.
FLX2 - 3
11:30

Development of Electrode Materials for Flexible
Electronic Paper: Application of Conductive Organic
Polymers by Higher Resolution Patterning
M. Nishii, R. Sakurai, K. Sugie, Y. Masuda, R. Hattori*
Bridgestone, Japan*Kyushu Univ., JapanA flexible electronic paper panel containing transparent conductive
polymer of PEDOT/PSS has been prepared. For the substrates coatedby PEDOT/PSS, laser ablation was performed to generate line-shaped
patterned electrodes in the resolution of 88 dpi. The electronic paper
exhibited comparable display properties to that composed ofconventional ITO electrodes.
----- Lunch -----

13:20 - 14:55

TENZUI

FLX3: Materials & Components for Flexible Displays
Chair:
Co-Chair:S. K. Ramadas, Tera-Barrier Films, Singapore
T. Nonaka, AZ Materials, Japan

FLX3 - 1:
13:20

Invited Nanoparticulate High Barrier Films for
Flexible Displays and Lighting Applications
S. K. Ramadas, Z. M. Shwe, M. Auch
Tera-Barrier Films, Singapore

A new nanoparticulate barrier stack concept has resolved barrier film’spore effect issues by sealing the defects of the barrier oxide films using
nanoparticles. This concept has demonstrated a breakthrough moisturebarrier performance of better than 10-6 g/m2/day at 60 °C & 90 %relative humidity.

190

Thursday
FLX3 - 2:
13:45

December 10
Invited Status of Thin Film Encapsulation of OLED:
From Pilot to Manufacturing
X. Chu, M. Rosenblum, S. Lin, C. Suen
Vitex Sys., USA

Multilayer organic/inorganic thin film encapsulation, commercialized byVitex as Barix, has shown effective water vapor transmission rate of 10-7
g/m2/day with fewer and thinner barrier layers with improved process.
The Barix process can meet less than 4 min cycle time requirement forG4 size substrate and offers low material cost.
FLX3 - 3
14:10

Curved Display Technology Based on Glass
Substrates
W. C. Yang, J. Y. Wu, C. Y. Su, Y. C. Liu, W. Y. Chien,
H. P. Kuo, M. S. Chen, W. M. Huang
AU Optronics, Taiwan

FLX3 - 4:
14:30

Invited Plastic Substrate and Backplane for Flexible
AMOLED by Sheet to Sheet Process
H.-C. Cheng, Y. S. Huang, C.-J. Liu, C.-W. Lin, K.-Y. Ho,
C.-H. Cheng, S. Y. Peng, Y.-P. Chen, H.-C. Lin,
B.-C. Kung, Y.-Z. Chen, P.-F. Lee, J.-J. Huang, C.-C. Lee
ITRI, Taiwan

We demonstrate an innovative approach of 4.1-inch QVGA AMOLED
on colorless PI substrate by sheet to sheet process. The top-gate aSi:H TFTs backplane, can be fabricated through 6 masks processes
and easily de-bonded from glass carrier. The de-bonded display showsbrightness more than 150 nits and bendable within 2.5 cm-radius.
----- Break -----

SID 2010
International Symposium, Seminar and Exhibition
May 23–28, 2010
Seattle, Washington, USA
191

FLX

The curved display technology based on glass substrates isdemonstrated in this paper. This technology is achieved by the ultra thincell and curved module design. The curved panel possesses good
display properties and similar producing process comparable totraditional flat panel display, and thus would be highly mass-producible.

Thursday

December 10

15:00 - 16:20

TENZUI

FLX4: Flexible Active-Matrix Devices
Chair:
Co-Chair:FLX4 - 1:
15:00

N. Kawashima, Sony, JapanY. Fujisaki, NHK, Japan
Invited Printable High Performance Semiconductors
for Curvilinear and Flexible Large-Area Electronics
C. A. Bower, E. Menard, J. W. Hamer*, R. S. Cok*,R. G. Nuzzo**, J. A. Rogers**
Semprius, USA*Eastman Kodak, USA**Univ. of Illinois, USA

We describe the fabrication and printing of inorganic semiconductormaterials for high-performance Curvilinear and Flexible Large-Area
Electronics of diverse form. We describe methods to obtain highperformance in printed electronics, including exemplary active-matrix
OLED displays with printed backplanes of silicon integrated circuits(ICs) in place of conventional thin-film transistors (TFTs).
FLX4 - 2
15:25

The Stability of a-IGZO Thin Film Transistors on
Plastic Substrate with Mechanical and Illumination
StressJ.-Y. Yan, C.-Y. Hung, H.-C. Yao, Y.-Y. Wu, H.-C. Lin,
C.-L. Liao, J.-J. Huang, Y.-S. Huang, H.-C. Cheng
ITRI, Taiwan

In this article, the amorphous InGaZnO4 thin film transistors were
fabricated on the polyimide substrate and the maximum processtemperature below 250°C. The mobility, threshold voltage andsubthreshold swing of a-IGZO TFT are 11.6cm2/Vs, 1.8V and 0.26V/
dec, respectively. Also, the mechanical and illumination effect of a-IGZO
TFTs were investigation.
FLX4 - 3
15:45

Fabrication of Flexible 4.7-in. QVGA AMOLED Panel
Driven by In-Ga-Zn-Oxide TFTs with Flexible Color
Filter
K. Arihara, M. Kano, K. Motai, Y. Naitou, M. Kadowaki,
H. Nakajima, T. Tsuboi, C. Kato, Y. Kishimoto, H. Maeda
Dai Nippon Printing, Japan

We have developed a novel flexible AM-OLED display driven byamorphous In-Ga-Zn-Oxide TFTs fabricated onto stainless steel
substrates. A 320 × 240 × RGB active matrix 4.7-inch panel wasachieved by using white-OLEDs and a flexible color filter. Also,
preferable full color moving images were demonstrated at the frame
frequency of 60 Hz.

192

Thursday

December 10

FLX4 - 4L
16:05

High-Speed Laser-Sintering of Nano-Metal Inks (Cuand Ag) for Inkjet Printing on Quartz Fiber Substrates
A. Mimura*, N. Shibayama*, M. Takeda*, T. Itoh*,***BEANS Lab., Japan**AIST, Japan

Inkjet direct printing technology is proposed for producing thin film
devices on fiber substrates. For a metallization, direct CO2 laser
irradiation in air was tested to achieve high-speed sintering of Cu andAg nano-metal inks on quartz wafer. The metal eduction was
successfully confirmed.
----- Break -----

16:40 - 17:40

TENZUI

FLX5: Flexible OLED
H. Kuma, Idemitsu Kosan, JapanO. Yokoyama, Seiko Epson, Japan

FLX5 - 1
16:40

Towards All R2R Printed SMOLED for Lighting,
Signage and Display

FLX

Chair:
Co-Chair:

K. R. van den Hoonaard, S. Harkema, I. de Vries,
G. Kirchner, J. J. Michels, D. Deganello*, J. A. Cherry*,
E. W. A. Young
TNO, the Netherlands
Swansea Univ., UK*

This study highlights the feasibility of SMOLED printing from solution for
display and lighting applications. This work has a special emphasis on
foil based processing, R2R in particular. Slot die printing and gravure
printing was studied for multilayer printed SMOLED device structures.
Hoy parameters were used to select appropriate solvents.
FLX5 - 2
17:00

Efficient and Chromatic-Controllable White Organic
Light-Emitting Diodes on Plastic Substrates Using
Color Conversion Method
B. Li, S. Sun, L. Lu, Y. Liao, C. Li, J. ZHang, H. Xu*,
B. WeiShanghai Univ., China*SVA Electron, China

The chromatic-stability white organic light emitting diodes have been
investigated basing on color conversion method, and result found little
CIE coordinate migration under driving voltage from 5V to 12V.

193

Thursday
FLX5 - 3
17:20

December 10
Multilayer Transparent Electrodes for Flexible andInverted Organic Light-Emitting Diodes
C. Yun, H. Cho, S. Park, S. Yoo
KAIST, Korea

We present highly flexible and inverted top-emission organic lightemitting diodes (ITOLEDs) based on multilayer transparent electrodes(MTEs) as transparent anodes. MTEs with an efficient hole-injection
property as well as high ductility introduced almost same or even better
luminance efficiency than bottom-emitting OLEDs with conventional ITO
films.

Author Interviews
18:00 – 19:00

IDW ’10The 17th International Display Workshops
December 1-3, 2010
Fukuoka International Congress Center
Fukuoka, Japan
http://www.idw.ne.jp/

Call for Papers

Special Section
on Electronic Displays
IEICE Transactions on Electronics
Submission Deadline: Feb. 26, 2010
http://ny7084.rie.shizuoka.ac.jp/eid/top-e.htm
194Friday

December 11

Topical Session on Input Technologies
Friday, December 11
9:00 - 9:05

TENRAN

Opening
Opening Remarks
9:00
H. Okumura, Toshiba, Japan
9:05 - 10:25

TENRAN

INP1: Imaging Devices & Systems
Chair:
Co-Chair:
INP1 - 1:
9:05

S. Kawahito, Shizuoka Univ., JapanY. Ukai, UDDI, Japan
Invited Recent Progress of CMOS Imaging Devices
S. Kawahito
Shizuoka Univ., Japan

INP1 - 2:
9:25

Invited CMOS Based Retinal Prosthesis Technology
T. Tokuda, J. Ohta
Nara Inst. of S&T, Japan

CMOS-based retinal prosthesis technology is presented. After issues
around CMOS-based stimulator for patterned stimulation on retina are
discussed, we propose multi-chip architecture which is the key
approach to realize a flexile and multi-site patterned stimulator. Design,
packaging and demonstrations of our CMOS-based multi-chip flexible
retinal stimulator is presented in detail.

195

INP

This paper presents recent progress of CMOS imaging devices.
Backside illumination greatly improves the sensitivity. A hole-based
detector greatly improves the dark current. The readout noise hasreached to single electron level by using column amplification
techniques. Column ADCs and time resolved pixels are becoming
important for new functions of imagers.

Friday
INP1 - 3:
9:45

December 11
Invited Stacked Image Sensor Using Organic
Photoconductive Films with ZnO-TFT Readout
Circuits
S. Aihara, H. Seo, M. Kubota, N. Egami, T. Hiramatsu*,
M. Furuta*, T. Hirao*
NHK, Japan*Kochi Univ. of Tech., Japan

Image pickup from a stacked image sensor with green- and redsensitive organic photoconductive films, each having a readout circuit ofzinc oxide-thin film transistor, was demonstrated. A color image with aresolution corresponding to the pixel number was obtained, clearly
indicating that color separation occurred in the vertically stacked
structure.
INP1 - 4
10:05

CMOS Image Sensor with a Thin Overlaid
Panchromatic Organic Photoconductive Layer for
Sensors with Reduced Pixel Size
M. Ihama, T. Mitsui, K. Nomura, Y. Maehara, H. Inomata,T. Gotou, Y. Takeuchi
FUJIFILM, Japan

We proposed a new CMOS image sensor with a thin overlaid
panchromatic organic photoconductive layer as the best candidate forsensors with reduced pixel size. We experimentally made the trial
products of the proposed sensor, verified the potential capability of our
proposal, and proved the validity of the organic CMOS sensor.
----- Break -----

10:40 - 12:20

TENRANINP2: Touch Panel (1)Chair:
Co-Chair:
INP2 - 1:
10:40

M.-J. Jou, AU Optronics, Taiwan
K. Takatori, NEC LCD Techs., Japan
Invited In-Cell Multi-Touch Panel: Trend andApplications
M.-J. Jou, C.-H. Li, Y.-J. Hsieh
AU Optronics, Taiwan

Touch panel can provide most intuitive way to interact with variety of
application. But the challenge is also coming with system complexity,
software interface and supporting in operating system. This article will
describe the theory of multi-touch panel and the proposal for system
integration.

196

Friday
INP2 - 2:
11:00

December 11
Invited Low Temperature Poly-Si TFT LCDs with
Integrated Contact-Type Touch Sensors
S. Hayashi, Y. Yamauchi, H. Mizuhashi, T. Koito,
M. Tamaki, M. Kondo, R. Tsuzaki, M. Minegishi
Sony Mobile Display, Japan

We have developed 2.5 inch QVGA poly-Si TFT LCDs with integrated
contact-type touch sensors and drivers which realize not only smoothertouch response but also the detection of stylus pressure. They reduce
external modules and provide better transmittance than conventional
LCDs with touch panels.
INP2 - 3:
11:20

Invited AM Displays with Imbedded Photo-Sensors
J. Jang, S. H. Kim, M. H. Kang, J. H. Hur
Kyung Hee Univ., Korea

We reviewed in this paper the active matrix displays with imbedded
photo-sensors. AMLCD imbedded with backlight control and ambient
light sensors, and AMLCD with image sensor were developed based ona-Si:H TFT. Sensors based on a-Si TFT on metal foil was also
developed for flexible sensor. The compensation pixel circuits for
AMOLED display using TFT optical feedback circuits and AMOLED withlateral LTPS PIN sensor were developed.
Invited A System LCD with Integrated Infra-Red
Sensing Optical Touch Panel

INP

INP2 - 4:
11:40

C. Brown, H. Kato*, K. Tanaka*, Y. Sugita*
Sharp Labs. of Europe, UK*Sharp, JapanWe describe a System LCD with integrated infra-red sensitive opticaltouch panel. The touch panel function is achieved by an image sensor
containing a novel pixel circuit with in-pixel amplification andtemperature compensation. The high sensitivity and robustness of thiscircuit enable adoption of the touch panel in mobile devices.
INP2 - 5
12:00

Touch Panel Embedded LCD Using Conductive
Overlay
H. Haga, J. Yanase, Y. Kamon, Y. Kitagishi, K. Takatori,
H. Asada, S. Kaneko
NEC LCD Techs., Japan

A touch panel embedded LCD using a conductive overlay formed on thecolor filter substrate as a transducer has been demonstrated. To
achieve high sensitivity, a parasitic current reduction technique whichremoves 99% of it has been developed.
----- Lunch -----

197

Friday

December 11

13:20 - 14:40

TENRAN

INP3: Touch Panel (2)Chair:
Co-Chair:
INP3 - 1:
13:20

G. Largillier, Stantum, France
H. Okumura, Toshiba, Japan
Invited Democratizing Multi-Touch Technology
G. Largillier
Stantum, France

Whereas Vision Human Factor studies provide an abundant literature tocharacterize display modules, building a specification for touch sensitive
systems - and more noticeably for multi-touch capable ones - remains
substantially empirical. Existing metrology gives useful data withregards to the mechanical and optical performances of touch panels.
However, it fails to measure what import the most to the user: tactile
performances….
INP3 - 2:
13:40

Invited Touch Technology on LCD
K. Uh, J. Lee, J. Park, S. Park
Samsung Mobile Display, Korea

Touch technologies have been adapted to mobile devices as a key userinterface of inputting and obtaining information. In terms of Display
itself, the integration of TSP on display actively proceeds in order totake the TSP value on displays, along with adding values of thinnerdesign and better outdoor view ability. In this paper, features of
conventional and integrated touch screen technologies are reviewed.
INP3 - 3
14:00

Dual Area Design in Large Size Internal Capacitive
Touch Panel
S.-Z. Peng, S.-H. Huang, H.-C. Huang, Y.-N. Chu,
W.-T. Tseng, H.-T. Yu, M.-L. Lee
Chunghwa Picture Tubes, Taiwan

Chunghwa Picture Tube, LTD has proposed a novel internal touch panel
structure in this paper. We have invented a dual pattern area design forlarge size touch panel in novel internal touch panel structure. Comparedwith single pattern area design, the dual pattern area can decrease theresistance and parasitic capacitance in long axis sensor traces.

198

Friday
INP3 - 4:
14:20

December 11
Invited Fast Updating of Bistable Displays for Pen
Tracking and Page Flipping
B. Rhodes
Ricoh Innovations, USA

We present a driver for bistable displays with fast, low-latency image
updates suitable for interactive interfaces such as pen tracking, pop-up
menus and quickly flipping through pages in a document. Images are
updated quickly, and the resulting ghosting artifacts are removed overtime using an unobtrusive “sparkle” update.

Author Interviews
16:20 – 17:20

INP

IDW Best Paper Award
This award will go to the most outstanding paper
selected from those presented at IDW ’09.
The 2009 award winners will be announced on the
IDW website: http://www.idw.ne.jp/award.html

IDW Outstanding
Poster Paper Award
This award will go to the most outstanding paper
selected from those presented at IDW ’09 poster
presentation.
The 2009 award winners will be announced on the
IDW website: http://www.idw.ne.jp/award.html
199

IDW ’09 COMMITTEESORGANIZING COMMITTEE
General Chair:
Standing (ITE):
Standing (SID):
Committee (Executive Chair):Committee (Program Chair):Committee:

Y. Yamamoto
T. Miyashita
K. Kondoh
K. Betsui
M. Omodani
Y. Shimodaira

Sharp
Tohoku Univ.
Sharp
HITACHI
Tokai Univ.
Shizuoka Univ.

OVERSEAS ADVISORS
P. J. Bos
J. Burroughes
P. Drzaic
N. Fruehauf
M.-K. Han
I. Heynderickx
J. Jang
H.-S. Kwok
T. LoweF.-C. LuoM. H. Oh
J.-N. Perbet
I. C. Sage
K. R. Sarma
H.-P. D. Shieh
D. TheisL. F. Weber

Kent State Univ., USA
Cambridge Display Tech., UK
SID, USA
Univ. of Stuttgart, Germany
Seoul Nat. Univ., Korea
Philips Res., the Netherlands
Kyung Hee Univ., Korea
Hong Kong Univ. of S&T, Hong Kong
Lambent Consultancy, UK
AU Optronics, Taiwan
Dankook Univ., Korea
THALES AVIONICS, France
QinetiQ, UK
Honeywell International, USA
Nat. Chiao Tung Univ., Taiwan
Tech. Univ. Munich, Germany
Consultant, USA

EXECUTIVE COMMITTEE
Executive Chair:
Executive Vice-Chair:

K. Betsui
M. Kimura
T. Komaki
T. Shiga
Program Chair:
M. Omodani
Program Vice-Chair:
R. Hattori
H. Mori
H. Sakurai
Program Secretary:
Y. Gotoh
K. HaraM. Kimura
S. Komura
S. Maeda
T. Miyashita
H. Okumura
Publication Chair:
M. DatePublication Vice-Chair: K. Takatori
Publication:
M. Suzuki
Treasurer:
T. Komaki
M. KimuraT. Taguchi
General Secretary:
T. KatohT. Suzuki
Local Arrangement Chair: K. Ishii
Exhibition Chair:
T. Nagatsuka

200

HITACHI
JSR
Panasonic
Univ. of Electro-Commun.
Tokai Univ.
Kyushu Univ.
FUJIFILM
Asahi Glass
Kyoto Univ.
Shizuoka Univ.
Ryukoku Univ.
Hitachi Displays
Oji Paper
Tohoku Univ.
ToshibaNTT
NEC LCD Techs.
Merck
Panasonic
Nagaoka Univ. of Tech.
Toppan Printing
ZEON
ZEON
NHK
Nitto Denko

FINANCIAL SUPPORTING COMMITTEE
Chair:
Senior Member:

K. Azuma
Y. Shimodaira
A. Mikami

Shimadzu
Shizuoka Univ.
Kanazawa Inst. of Tech.

EXECUTIVE COMMITTEE
Members:

H. Arai
K. Dantani
H. Hori
H. Inoue
M. Inoue
M. Inoue
M. Inoue
Y. Ishii
T. Itoh
H. Kanayama
S. Kaneko
M. KanoH. Kobayashi
K. Kobayashi
S. Kobayashi
M. Koden
S. Kojima
Y. Komiya
S. Kondoh
H. Kuma
K. Matsuhiro
S. Matsuyama
S. Mikoshiba
H. Mimura
H. Murakami
S. Naemura
K. Nakazawa
Y. Nishimura
H. Ohnishi
T. Ohnishi
S. Okabayashi
T. Saito
A. Sasaki
T. Shinoda
S. Shiwa
K. Sueoka
T. Sugiura
M. Sumitomo
K. Suzuki
K. Takeuchi
Y. Takiguchi
Y. Toko
Y. Tsuchiya
M. Tsumura
T. Uchida
M. Uchidoi
H. Uchiike
K. Uchikawa
S. Uemura
T. Ushiki
S. Yamamoto
Y. Yanagi
Y. YodaFPD NetATMI Japan
Hitachi High-Tech.
Mitsubishi Elec.
Toyo
TPO Displays Japan
Sharp
Corning Holding Japan
Sanyo Elec.
NEC LCD Techs.
Alps Elec.
Mitsubishi Elec.
Tokyo Univ. of Sci. Yamaguchi
Sharp
OptrexOlympus Optical
CitizenIdemitsu Kosan
Arisawa Manufacturing
Hitachi Displays
APDC
Shizuoka Univ.
Dai Nippon Printing
Tottori Univ.
NTT
AKT
Ehime Univ.
Sumitomo Chem.
Meijyo Univ.
Tokyo Cathode Lab.
Kyoto Univ.
Shinoda Plasma
Tokyo Denki Univ.
Hokkaido Univ.
IDM
Nichia
SED
DIC
Ricoh
Stanley Elec.
NHK
HitachiTohoku Univ.
Panasonic
Tokyo Ohka Kogyo
Noritake
Seiko Epson
Seiko Instrs.
Mitsubishi Heavy Ind.
Otsuka Elec.
201

H. Yokoyama
M. Yokozawa
M. Yuki

Kent State Univ.
Tokyo Univ. of Info. Sci.
Asahi Glass

WORKSHOP/TOPICAL SESSION CHAIR
LCT
AMD
FMC
PDP
PH
FED
OLED
3D
VHF
LAD
EP
MEMS
DES
FLX
INP

H. Fujikake
K. Takatori
R. Yamaguchi
H. Kajiyama
Y. Nakanishi
M. TakaiT. Inoue
I. Yuyama
Y. Shimodaira
K. Takeda
A. Suzuki
M. Nakamoto
H. Okumura
H. Fujikake
H. Okumura

NHK
NEC LCD Techs.
Akita Univ.
Hiroshima Univ.
Shizuoka Univ.
Osaka Univ.
TDK
Utsunomiya Univ.
Shizuoka Univ.
Seiko Epson
Ricoh
Shizuoka Univ.
ToshibaNHK
Toshiba

PROGRAM COMMITTEE
Program Chair:
Program Vice-Chair:
Program Secretary:

Committee:
LCT
AMD
FMC
PDP
PH
FED
OLED
3D
VHF
LAD
EP
MEMS
DES

M. Omodani
R. Hattori
H. Mori
H. Sakurai
Y. Gotoh
K. HaraM. Kimura
S. Komura
S. Maeda
H. Okumura

Tokai Univ.
Kyushu Univ.
FUJIFILM
Asahi Glass
Kyoto Univ.
Shizuoka Univ.
Ryukoku Univ.
Hitachi Displays
Oji Paper
Toshiba

K. Ishikawa
M. Kimura
M. Shinohara
Y. Murakami
N. Miura
H. Mimura
Y. Kijima
M. Hashimoto
K. Masaoka
T. Hayashi
T. Fujisawa
Y. NakaiK. Sekiya

Tokyo Inst. of Tech.
Ryukoku Univ.
Omron
NHK
Meiji Univ.
Shizuoka Univ.
Sony
NTT
NHK
3M
DIC
Toshiba
Tohoku Univ.

Workshop on LC Science and Technologies
Workshop Chair:
Program Chair:
Program Vice-Chair:
General Secretary:
Exhibition Committee:
Program Committee:

202

H. Fujikake
K. Ishikawa
M. Suzuki
S. Komura
M. KimuraO. Okumura
H. Amakawa
A. Fujita
M. Funahashi
M. Inoue
T. Ishinabe
M. KimuraNHK
Tokyo Inst. of Tech.
Merck
Hitachi Displays
JSR
Seiko Epson
Citizen Tech. Ctr
Chisso Petrochem.
Tokyo Univ.
Toyo
Tohoku Univ.
Nagaoka Univ. of Tech.

A. Kubono
K. Miyachi
I. Nishiyama
T. NoseH. Okada
M. OzakiT. Takahashi
H. Wakemoto

Shizuoka Univ.
Sharp
DIC
Akita Pref. Univ.
Univ. of Toyama
Osaka Univ.
Kogakuin Univ.
Toshiba Mobile Display

Workshop on Active Matrix Displays
Workshop Chair:
Program Chair:
Program Vice-Chair:
General Secretary:
Program Committee:

K. Takatori
M. Kimura
K. NomotoY. Fujisaki
K. Azuma
H. Hamada
M. Hiramatsu
S. Hirota
S. Horita
A. Hoshino
M. Inoue
H. Kumomi
T. Noguchi
S. Utsunomiya

NEC LCD Techs.
Ryukoku Univ.
Sony
NHK
Shimadzu
Sanyo Elec.
Toshiba Mobile Display
Hitachi Maxell
JAIST
Sharp
TPO Displays Japan
Canon
Univ. of the Ryukyus
Seiko Epson

Workshop on FPD Manufacturing, Materials and Components
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

R. Yamaguchi
M. Shinohara
Y. Saitoh
D. AokiS. Asari
K. Dantani
K. Fujishiro
T. Hayashi
Y. Iimura
T. Itoh
K. Käläntär
T. Katoh
M. Kimura
C. C. Lee
M. Miyatake
N. Miyatake
K. Miyazawa
K. Niwa
T. Nonaka
H. Sakurai
M. Shida
K. Shimamura
F. Shimo
T. Takeda
T. Tomono
Y. UkaiT. Unate
Y. Yang

Akita Univ.
Omron
FUJIFILMDNPULVACATMI Japan
Nippon Steel Chem.
3M
Tokyo Univ. of A&T
Corning Holding Japan
Nippon Leiz
ZEON
JSR
ITRI
Nitto Denko
Mitsui Eng.&Shipbuilding
Chisso Petrochem.
JSR
AZ Elec.
Asahi Glass
TOK
Mitsui Eng.&Shipbuilding
Tokyo Electron
Nagase ChemteX
ToppanUDDI
Sekisui Chem.
Sony

203

Workshop on Plasma Displays
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

H. Kajiyama
Y. Murakami
T. Shiga
S. Mikoshiba
R. Murai
T. Nagatomi
Y. Nakao
T. Shinoda
M. Uchidoi

Hiroshima Univ.
NHK
Univ. of Electro-Commun.
APDC
Panasonic
Osaka Univ.
Asahi Glass
Shinoda Plasma
Panasonic

Workshop on EL Displays, LEDs and Phosphors
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

Y. Nakanishi
N. Miura
N. Matsuda
S. ItohD. Y. Jeon
M. Katayama
H. Kobayashi
T. Kusunoki
T. Minami
M. Niboshi
K. OhmiS. Okamoto
D. Poelman
M. Shiiki
M. Sumitomo
T. Takayuki
K. WaniR. J. Xie
H. Yamamoto

Shizuoka Univ.
Meiji Univ.
ToshibaFutabaKAIST
Denso
Tottori Univ.
SONY
Kanazawa Inst. of Tech.
Sharp
Tottori Univ.
NHK
Ghent Univ.
HitachiNichia Chem. Ind.
Kasei Optonix
TAZMO
NIMS
Tokyo Univ. of Tech.

Workshop on Field Emission Display and CRT
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

M. Takai
H. Mimura
M. Namba
T. Asano
Y. Gotoh
Y. Iguchi
J. Ishikawa
T. Kusunoki
M. Nakamoto
S. Okuda
T. Saito
S. Uemura

Osaka Univ.
Shizuoka Univ.
NHK
Kyushu Univ.
Kyoto Univ.
Sony
Chubu Univ.
HitachiShizuoka Univ.
Sonac
Tokyo Cathode Lab.
NoritakeWorkshop on Organic LED Displays
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

204

T. Inoue
Y. Kijima
S. Naka
C. Adachi
S. Aratani
Y. Fujita
R. Hattori
J. KidoH. Kuma
H. Kubota
A. Mikami
T. Miyadera
H. Miyazaki

TDK
Sony
Univ. of Toyama
Kyushu Univ.
Hitachi
Sharp
Kyushu Univ.
Yamagata Univ.
Idemitsu Kosan
Toshiba Mobile Display
Kanazawa Inst. of Tech.
Pioneer
Nippon Steel Chem.

H. Murata
K. Nakayama
Y. SatoS. Tokito
T. Wakimoto
O. Yokoyama

JAIST
Yamagata Univ.
JST
NHK
Merck
Seiko Epson

Workshop on 3D/Hyper-Realistic Displays and Systems
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

I. Yuyama
M. Hashimoto
S. YanoT. Fujii
Y. Komiya
K. Mashitani
T. Mishina
S. Ohtsuka
J.-Y. Son
H. Takemura
C.-H. Tsai
H. Yamamoto
T. Yoshida

Utsunomiya Univ.
NTT
NICT
Tokyo Inst. of Tech.
Olympus
Sanyo Elec.
NICT
Kagoshima Univ.
Daegu Univ.
Osaka Univ.
ITRI
Univ. of Tokushima
Toppan Printing

Workshop on Applied Vision and Human Factors
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

Y. ShimodairaK. Masaoka
T. Matsumoto
J. Bergquist
C. Clippingdale
N. Hiruma
M. Idesawa
H. Isono
S. Kubota
T. Kurita
T. Mitsuhashi
J. Someya
T. Tamura
T. WakeT. Yamamoto
R. Yoshitake

Shizuoka Univ.
NHK
Sony
Nokia
NHK
NHK
Univ. of Electro-Commun.
Nippon Inst. of Tech.
Seikei Univ.
NICT
Shobi Univ.
Mitsubishi Elec.
Tokyo Polytech. Univ
Kanagawa Univ.
Hitachi
IBM Japan

Workshop on Projection and Large-Area Displays,
and Their Components
Workshop Chair:
Program Chair:
Program Vice Chair:
General Secretary:
Program Committee:

K. Takeda
T. Hayashi
H. Kikuchi
S. Shikama
T. Suzuki
Y. Asakura
Y. Fushimi
Y. Hayashi
H. Kanayama
S. Koike
H. NakanoT. Ogura
K. Ohara
S. OuchiY. SakaiZ. Tajima
T. Yoshida

Seiko Epson
3M
NICT
Setsunan Univ.
JVC Kenwood
Nittoh Kogaku
Panasonic
Sony
Sanyo Elec.
Seiko Epson
Barco
Panasonic
Texas Inst. Japan
Hitachi
Ushio
Mobara Atecs
Toppan Printing

205

Workshop on Electoronic Paper
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

A. Suzuki
T. Fujisawa
H. Arisawa
M. Higuchi
Y. Hotta
T. Kitamura
S. Maeda
Y. Masuda
N.-S. Roh
Y. Toko
T. Tsuchiya
G. F. Zhou

Ricoh
DIC
Fuji Xerox
NIMS
Ricoh
Chiba Univ.
Oji Paper
BridgestoneSamsung Elec.
Stanley Elec.
E-ink
Philips Res.

Workshop on MEMS for Future Displays and Related Electron
Devices
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

M. Nakamoto
Y. NakaiT. Komoda
T. Akinwande
G. Barbastathis
M. Esashi
H. Fujita
J. Jang
H. Kikuchi
J. M. Kim
K. Matsumoto
W. I. Milne
T. Ooasa
S. Sugiyama
H. L. Tuller
S. Uchikoga
J.-B. Yoon
Y. Yoshida

Shizuoka Univ.
Toshiba
Panasonic Elec. Works
MIT
MIT
Tohoku Univ.
Univ. of Tokyo
Kyung Hee Univ.
NICT
Samsung
Olympus
Cambridge Univ.
Tokyo Electron
Ritsumeikan Univ.
MIT
Toshiba
KAIST
Mitsubishi Elec.

Workshop on Display Electronic Systems
Workshop Chair:
Program Chair:Vice Program Chair:
General Secretary:
Program Committee:

H. Okumura
ToshibaK. Sekiya
Tohoku Univ.
K. Käläntär
Nippon Leiz
Y. KudoHitachiT. Fujine
Sharp
S. ItoShizuoka Univ.
T. KimApple
M. A. Klompenhouwer Philips Res.
H.-S. Koo
Ming-Hsing Univ. of S&T
O.-K. Kwon
Hanyang Univ.
A. Nagase
Mitsubishi Elec.
S. OnoPanasonic
H. Sasaki
ToshibaN. Suzuki
Nokia Japan
K. Takeuchi
Univ. of Elecro-Commun.
T. Yamamoto
NHK

Topical Session on Flexible Displays
Session Chair:
General Secretary:
Session Co-Chair:

206

H. Fujikake
S. Maeda
Y. Masuda
K. NomotoS. Tokito
T. TomonoNHK
Oji Paper
BridgestoneSony
NHK
Toppan Printing

Topical Session on Input Technologies
Session Chair:
Program Committee:

H. Okumura
A. Suzuki
N. Suzuki
K. Takatori
Y. UkaiToshiba
Ricoh
Nokia Japan
NEC LCD Techs.
UDDI

IDW ’10The 17th International Display Workshops
December 1-3, 2010
Fukuoka International Congress Center
Fukuoka, Japan
http://www.idw.ne.jp/

EVENING GET-TOGETHERWITH WINE
Tuesday, December 8, 2009
18:00–20:00
Room “FOUNTAIN” (2F)World Convention Center Summit(Sponsored by Merck Ltd., Japan)
See page 9 for details

IDW Tutorial in Japanese
Tuesday, December 8, 2009
Room “TENRAN” (4F)
World Convention Center Summit
Detailed information will be announced in October at
http://www.sidchapters.org/japan/
207

FLOOR PLAN
2F
GIBRALTAR

Bag Desk

AtriumEscalator
to 3F, 4F
Foyer
2F Entrance

Main Lobby

Registration
Cloak

ORCHARDROOM

FOUNTAIN
ROOM

Escalator
1F Entrance

PHOENIX

Evening
Get Together

Chapel

Bus
Stop
(1F)

208

Sheraton Grande
Ocean Resort

Secretariat

Speaker Preparation Room

4F

AMBER IVORY
Room RoomTENGYOKUTENRAN
Escalator

Keynote and Invited
Addresses

Foyer
TENZUI

Banquet

TENYO

TENJU

MARBLE CRYSTAL
Room
Room

Exhibition

3F

KAIHO

Escalator

Foyer

ZUIYO

RYOYA

HOUN

KUNPU

SHINRYOAJIRO

HATSUZORASHUNRIN

FUKO

Poster and AuthorInterviews
209

MEMO

Call for Papers

Feature on IDW ’09
The Journals of The Institute of Image
Information and Television Engineers
Submission Deadline: Feb. 26, 2010
http://www.ite.or.jp/ronbun/ronbun_index.htm(in Japanese)

Call for Papers

Special Section
on Electronic Displays
IEICE Transactions on Electronics
Submission Deadline: Feb. 26, 2010
http://ny7084.rie.shizuoka.ac.jp/eid/top-e.htm

IDW ’09 Session Navigator
Location

Keynote& Invited

TENZUI

9:30-12:10

Friday, Dec. 11

Thursday, Dec. 10

Wednesday, Dec. 9
PM

18:00-19:00

PMAM

18:00-19:00

Measurement Method& Characterization
High Performance
LCDs (1)TENRAN
3F Foyer
TENZUIAMD

Posters
System on Panel

Advanced Blue Phase
LC Technology

Emerging LC
Materials

New Functional
LC Devices

A.I.

*AM-OLED (2)Sensing Devices

Oxide TFT (1)A.I.
Materials I

Manufacturing
Technologies I

Manufacturing
Technologies II

Oxide TFT (2)Backlight I
A.I.

A.I.

Posters

Materials II

Environmental Friendly
Technologies
Posters

Backlight II

Optical Films I

Optical Films II

A.I.

A.I.

Novel PDPsTENJUHigh γ Materials

MgO

TENYO

Phosphors forLEDs 2TENJU
Phoshors inGeneralKAIHO
3F Foyer

Electron Emission Essentials of PDP
MechanismPhysics
A.I.

A.I.

Posters

3F Foyer

FED

A.I.

Organic TFT

A.I.

3F FoyerPH

Advanced Non-contact
Alignment Technology*AM-OLED (1)3F FoyerPDP

New Alignment
Technology

Si Device
Technologies

TENGYOKU
TENYO

TENJU

16:20-17:20

High Performance
LCDs (2)A.I.

TENGYOKU

FMC

PM

Opening, Keynote &Invited Addresses

TENZUI

LCT

AM

Phosphors in
EL & PDP

Phosphors forLEDs 1*Phosphors for
FEDs

Posters

A.I.

A.I.
CNTs & FEDs

KAIHO

*Phosphors for
FEDs

Field Emitters (1)Field Emitters (2)A.I.

3F Foyer
TENGYOKU*AM-OLED (2)

TENJU

OLED

TENYO

OLED Lighting
OLED Material &DeviceOLEDTechnologies*AM-OLED (1)3F Foyer

3D

A.I.

Posters

3D Display Image

KAIHO
ZUIYO

Moving Image
Quality

Dynamic Range &Gray Scale Expression

A.I.

TENYO

Color (2)Video System &Image Quality

Posters
Digital Cinema &Pico Projectors
Signage

Laser Projector &Its Components

Speckle Reduction
Technologies

Projection
Components

A.I.

A.I.

EP

Electrophoretic
Displays

Particles Moving
Displays

LC Type Electronic
Paper & Others
Electrowetting &Electrochromic Displays
A.I.

Posters
Emerging
Technologies

ZUIYO

Displays &Imaging

Fundamental
Fundamental
Components Process Components Process
Technologies 1
Technologies 2

A.I.

DES

A.I.
Beyond theStandards

Backlight Control

3F FoyerFLXTENZUI

Advanced Display
Systems*Color (1)A.I.
Flexible LC
Technology

Posters
Flexible Electronic
Paper

A.I.
Materials & Components
for Flexible Displays

Flexible ActiveMatrix Devices

Flexible OLED

3F Foyer

INP

A.I.

Optical MEMS &DeviceTechnologies

3F Foyer
KAIHO

Posters
Driving Methods forElectronic Paper

TENJU
3F Foyer

MEMS

3D Display
Performance (2)A.I.

*Color (1)3F Foyer
TENGYOKU

3D Display
Performance (1)Display Human
Factors

3F FoyerLAD

3D Display &Acquisition

Posters

3F Foyer

VHF

A.I.

ZUIYO

A.I.
Imaging Devices& Systems

TENRAN

Touch Panel (1)3F Foyer

LCT: Workshop on LC Science & Technologies
AMD: Workshop on Active Matrix Displays
FMC: Workshop on FPD Manufacturing, Materials & Components
PDP: Workshop on Plasma Displays
PH: Workshop on EL Displays & Phosphors
FED: Workshop on Field Emission Display & CRT
OLED: Workshop on Organic LED Displays
3D: Workshop on 3D/Hyper-Realistic Displays & Systems

Touch Panel (2)A.I.

VHF: Workshop on Applied Vision & Human Factors
LAD: Workshop on Projection & Large-Area Displays & Their Components
EP: Workshop on Electronic Paper
MEMS: Workshop on MEMS for Future Displays & Related Electron Divices
DES: Workshop on Display Electronic Systems
FLX: Topical Session on Flexible Displays
INP: Topical Session on Input Technologies

A.I.: Author Interviews*: Joint Session

Date

2F Lobby

Tue.,
Dec. 8

IDW ’09 Timetable
Registration
17:00-20:00

TENZUITENRAN

4F SUMMIT HALLTENGYOKU

TENJU

TENYO

3F MID ROOM
ZUIYO
KAIHO

3F Foyer

4F Foyer

Evening Get-Together at FOUNTAIN Room (2F)
18:00-20:00
Opening,
KeynoteAddress
9:30-11:00

Wednesday, December 9

BreakInvited Address
11:10-12:10
Registration
8:00-18:00

AMD1
13:20-14:45

EP1
13:20-14:40

AMD2
15:00-16:15

EP2
15:00-16:20
LCT1
16:40-18:00

EP3
16:40-18:00

Lunch
FMC1
13:20-14:55
Break
FMC2
15:00-16:20
Break
FMC3
16:40-18:00

OLED1
13:20-14:40

DES1
13:15-14:40

VHF1
13:20-14:40

OLED2
15:00-16:20

DES2
15:00-16:15

VHF2
15:00-16:30

OLED3/AMD3
16:40-17:40

DES3
16:40-17:50

VHF3
16:40-18:00

LCTp, PHp
13:20-16:20

Exhibition
12:00-18:00

AuthorInterviews
18:00- 19:00
BreakThursday, December 10

FLX1
9:00-10:35

Registration
8:00-18:00

AMD4/OLED4
9:00-10:10

FLX2
10:40-11:50

LCT2
10:40-12:15

AMD5
10:40-12:10

FLX3
13:20-14:55

LCT3
13:20-14:50

AMD6
13:20-14:45

FLX4
15:00-16:20

LCT4
15:00-16:30

FMC4
15:00-16:20

FLX5
16:40-17:40

LCT5
16:40-18:05

FMC5
16:40-18:00

Banquet at TENZUI Room (4F)
19:30-21:30
LAD1
PH1
9:00-10:20
9:00-10:25

EP4
9:00-10:05
Break
OLED5
10:40-11:35
Lunch
PH3
13:20-14:40
Break
PH4
15:00-16:10
Break
PDP1
16:40-18:00

MEMS1
9:00-10:15

LAD2
10:40-12:15

PH2
10:40-12:10

MEMS2
10:40-11:45

LAD3
13:20-14:30

VHF4/DES4
13:20-15:00

MEMS3
13:20-14:50

LAD4
15:00-16:20

VHF5
15:10-16:40

MEMS4
15:10-16:35

LAD5
16:40-18:00

VHF6
16:50-18:15

MEMS5
16:50-18:00

FMCp, VHFp,
DESp
9:00-12:00

PDPp, OLEDp,
3Dp, EPp
13:20-16:20

Exhibition
10:00-18:00

Friday, December 11

AuthorInterviews
18:00-19:00

Registration
8:00-13:00

LCT6
9:00-10:20

INP1
9:00-10:25

LCT7
10:40-12:05

INP2
10:40-12:20

LCT8
13:20-14:00

INP3
13:20-14:40

EP5
9:00-10:25

AMD7
13:15-14:40
AMD8
14:50-16:20

FMC6
9:00-10:20
Break
FMC7
10:40-12:20
Lunch
FMC8
13:20-14:55
Break
FMC9
15:00-16:20

PDP2
9:00-10:20

FED1
9:00-10:20

3D1
9:00-10:25

PDP3
10:40-12:00

FED2/PH5
10:40-11:50

3D2
10:40-12:00

PDP4
13:20-14:40

FED3
13:20-14:40

3D3
13:20-14:40

PDP5
15:00-16:20

FED4
15:00-16:00

3D4
15:00-16:20

AMDp, LADp
9:00-12:00
Exhibition
10:00-14:00

AuthorInterviews
16:20-17:20

IDW ’09
FINAL PROGRAM

IDW ’09 Secretariat:
c/o Bilingual Group Ltd.
3-3-6 Kudan Minami, Chiyoda-ku
Tokyo 102-0074, Japan