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FINAL PROGRAM

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MICROLINE／【Ｎ：】Ｓｅｒｖｅｒ／ＩＤＷ（読み込みｒｎｏｓ４）／ＩＤＷファイナル／目次

CONTENTS
Program Highlights …………………………………………………………… 6
General Information…………………………………………………………… 9
Hotel and Travel Information ……………………………………………… 12
Plenary Sessions
Tuesday, December 6
Opening Remarks
Opening …………………………………………… 16
Keynote Address
Keynote Addresses ……………………………… 16
Invited Address
Invited Addresses ………………………………… 16
Workshop on LC Science and Technologies
Tuesday, December 6
LCT1
New Materials for LCD Applications …………………………… 18
LCT2
Fast Responce LCDs …………………………………………… 19
LCT3
LC Alignment Process …………………………………………… 20
Wednesday, December 7
LCT4
LC Mode …………………………………………………………… 21
EP5/LCT5 Flexible LCD ………………………………………………… 24
LCT6
Panel and Evaluation …………………………………………… 25
LCTp1 Poster: LCD Mode………………………………………………… 26
LCTp2 Poster: LCD Alignment …………………………………………… 30
LCTp3 Poster: Materials ………………………………………………… 32
LCTp4 Poster: Optical Design and Measurement …………………… 34
LCTp5 Poster: Novel Devices …………………………………………… 37
Workshop on Active Matrix Displays
Tuesday, December 6
AMD1 LC-TV ……………………………………………………………… 39
AMD2 Large Area Display Applications ………………………………… 40
AMD3 Emerging TFT Technologies …………………………………… 40
Wednesday, December 7
EP4/AMD4 Active Matrix Electronic Paper …………………………… 42
OLED4/AMD5
Active Matrix OLED …………………………………… 43
AMD6 Mobile Displays …………………………………………………… 45
OLEDp/AMDp
Poster: Active Matrix OLED …………………………… 47
Thursday, December 8
AMD7 TFT Technologies - Crystallization ……………………………… 49
AMD8 TFT Technologies - Modeling & Analysis ……………………… 51
AMD9 TFT Technologies - Process Technologies …………………… 52
AMDp Poster: Active Matrix Displays…………………………………… 53
Friday, December 9
AMD10 System on Panel (1) ……………………………………………… 70
AMD11 System on Panel (2) ……………………………………………… 71
AMD12 Organic TFT Technologies ……………………………………… 73

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Workshop on FPD Manufacturing, Materials andComponents
Tuesday, December 6
FMC1 Manufacturing Technologies (1) ………………………………… 75
FMC2 Manufacturing Technologies (2) ………………………………… 76
FMC3 Manufacturing Technologies (3) ………………………………… 77
Wednesday, December 7
FMC4 Color Filters (1) …………………………………………………… 78
FMC5 Color Filters (2) …………………………………………………… 79
Thursday, December 8
FMC6 Environment Friendly Technologies & Backlight Systems (1) 81
FMC7 Backlight Systems (2) …………………………………………… 82
FMC8 Backlight Systems (3) …………………………………………… 84
FMCp Poster: FPD Manufacturing, Materials & Components ……… 85
Friday, December 9
FMC9 Materials (1) ……………………………………………………… 91
FMC10 Materials (2) ……………………………………………………… 93
FMC11 Optical Films (1) ………………………………………………… 94
FMC12 Optical Films (2) ………………………………………………… 95
Workshop on CRTs
Tuesday, December 6
CRT
Opening …………………………………………………………… 97
CRT1 Slim CRTs ………………………………………………………… 97
Wednesday, December 7
CRT2 CRT Market Trends ……………………………………………… 98
CRT3 Electron Guns & Cathodes ……………………………………… 98
CRT4 Masks & Glass …………………………………………………… 99
CRTp Poster: CRTs …………………………………………………… 101
Workshop on Plasma Displays
Wednesday, December 7
PDP1 Protective Layer ………………………………………………… 102
PDPp1 Poster: PDP (1) ………………………………………………… 103
Thursday, December 8
PDP2 Driving (1) ………………………………………………………… 108
PDP3 Discharge and Driving (2) ……………………………………… 109
PDPp2 Poster: PDP (2) ………………………………………………… 111
Friday, December 9
PDP4 Image Quality …………………………………………………… 117
PDP5 Novel PDPs ……………………………………………………… 118
PDP6 High Resolution Technologies ………………………………… 119
Workshop on EL Displays, LEDs and Phosphors
Wednesday, December 7
PH1
Phosphors in General…………………………………………… 122
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PHp

Poster: Phosphors ……………………………………………… 123

Thursday, December 8
PH2
Phosphors for LEDs …………………………………………… 128
PH3
ELDs (1) ………………………………………………………… 129
PH4
ELDs (2) ………………………………………………………… 131
Friday, December 9
FED2/PH5 FEDs and Phosphors for FEDs ………………………… 132
Workshop on Field Emission Display
Friday, December 9
FED
Opening ………………………………………………………… 134
FED1 CNT Emitters and FEDs ……………………………………… 134
FED2/PH5 FEDs and Phosphors for FEDs ………………………… 135
FED3 CNT Emitters for FEDs ………………………………………… 136
FED4 FE Materials and Novel Device ……………………………… 139
Workshop on Organic LED Displays
Tuesday, December 6
OLED1 High Efficiency …………………………………………………… 142
OLED2 Process Technology …………………………………………… 143
OLED3 Device Structure ………………………………………………… 144
Wednesday, December 7
OLED4/AMD5
Active Matrix OLED ………………………………… 146
OLEDp/AMDp
Poster: Active Matrix OLED ………………………… 147
OLEDp Poster: OLED poster …………………………………………… 150
Workshop on 3D/Hyper-Realistic Displays and Systems
Thursday, December 8
3D1
Perception and System Design………………………………… 160
3Dp
Poster: 3D Display (Late News) ……………………………… 162
Friday, December 9
3D2
Advanced Display Systems …………………………………… 163
3D3
Holography ……………………………………………………… 164
3D4
3D Display ……………………………………………………… 165
Workshop on Applied Vision and Human Factors
Wednesday, December 7
VHF
Opening ………………………………………………………… 168
VHF1 Viewing Angle Dependent Image Quality …………………… 168
VHF2 Moving Image Quality (1) ……………………………………… 169
VHF3 Moving Image Quality (2) ……………………………………… 170
Thursday, December 8
VHF4 Color Reproduction ……………………………………………… 171
VHF5 Image Quality & Ergonomics ………………………………… 172
VHFp Poster: Human Factors and Image Quality …………………… 174

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Workshop on Projection and Large-Area Displays, and Their
Components
Thursday, December 8LADp
Poster: Projection Display Technologies ……………………… 178
Friday, December 9LAD1
Market and Trend ……………………………………………… 179
LAD2
Optics and Imaging……………………………………………… 180
LAD3
Light Source and Illumination ………………………………… 182
LAD4
Light Valve ……………………………………………………… 183
Workshop on Electronic Paper
Tuesday, December 6
EP1
Electronic Paper (1) …………………………………………… 185
EP2
Electronic Paper (2) …………………………………………… 186
EP3
Electronic Paper (3) …………………………………………… 187
Wednesday, December 7
EP4/AMD4 Active Matrix Electronic Paper …………………………… 188
EP5/LCT5 Flexible LCD………………………………………………… 190
EPp
Poster: Electronic Paper………………………………………… 191
Topical Session on MEMS for Future Displays and RelatedElectron Devices
Thursday, December 8
MEMS Opening ………………………………………………………… 194
MEMS1 Displays and Optical Devices (1) ……………………………… 194
MEMS2 Fundamental Mechanism and Materials ……………………… 195
MEMS3 Imaging and Sensors …………………………………………… 198
MEMS4 Displays and Optical Devices (2) ……………………………… 199
Topical Session on Accumulation and Imaging Technique of
Optical Information
Tuesday, December 6
AIT1
AIT(1)……………………………………………………………… 201
AIT2
AIT(2) …………………………………………………………… 202
Wednesday, December 7
AITp
Poster: AIT(3) …………………………………………………… 203
Topical Session on Novel Imaging Devices and Systems
Thursday, December 8
IDS1
Novel Imaging Devices and Systems (1) …………………… 204
IDS2
Novel Imaging Devices and Systems (2) …………………… 205
IDW/AD ’05 Timetable …………………………………………… Centerfold
IDW/AD ’05 Session Navigator …………………………………… Centerfold
IDW/AD ’05 Committees ………………………………………………… 207
Floor Plan …………………………………………………………………… 217

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IDW '06
International Display Workshops
Dec. 6 – 8, 2006
Convention Hall Ohmi, Otsu Prince HotelOtsu, Japan
http://idw.ee.uec.ac.jp

BANQUET
Wednesday, December 7
19:00 – 21:00
at Hiten (3F)
ANA Hotel Clement Takamatsu
See page 9 for details

SID 2006
Society for Information Display
Symposium, Seminar & Exhibition
June 4–9, 2006
San Francisco, CA, USA
http://www.sid.org

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PROGRAM HIGHLIGHTS
Scientific and technological advances in information display research anddevelopment will be found at the 12th International Display Workshops inconjunction with Asia Display (IDW/AD 05). A feature of IDW/AD 05 is
the integration of the following twelve workshops and three topical sessions.
Workshops on
LC Science and Technologies
Active Matrix Displays
FPD Manufacturing, Materials and Components
CRTs
Plasma Displays
EL Displays, LEDs and Phosphors
Field Emission Display
Organic LED Displays
3D/Hyper-Realistic Displays and Systems
Applied Vision and Human Factors
Projection and Large-Area Displays and Their Components
Electric paper
Topical Sessions on
MEMS for Future Displays and Related Electron Devices
Optical Information Accumulation and Imaging Technique
Novel Imaging Devices and Systems
The four-day conference will feature 554 papers, including two keynote
addresses, two invited addresses, 83 invited papers, 195 oral and 196
poster presentations, and 76 late-news papers. Following keynote and invited addresses on Tuesday morning, presentations will begin and continue in six parallel sessions through Friday. Poster sessions and author
interviews will enable participants to discuss presented issues in detail.
Exhibitions from display and related industries will also be featured from
Tuesday to Friday in parallel with workshops and topical sessions. IDW/
AD ’05 should be of interest not only to researchers and engineers, butalso to those who manage companies and institutions in the display
community.
Workshop on LC Science and Technologies (LCT)
Recent advances in LC materials and device technologies are presented.
The session covers from fundamental studies to recent development in
LCD technologies. New materials for LCD application, fast response
LCDs, LC alignment process, LC mode, electronic paper, flexible LCD,
panel & evaluation, optical design & measurement, and novel devices
are discussed.
Workshop on Active Matrix Display (AMD)Recent progress in TFT technologies and active matrix displays arewidely discussed. Sessions cover device and process technologies for aSi, poly-Si, organic and new material TFTs, featuring nineteen topical invited talks. Their applications to active matrix displays including LC-TVs,
mobile displays, electronic paper and OLED displays are presented. Furthermore, novel applications to sensors, detectors and system on panel
are discussed.
Workshop on FPD Manufacturing Materials and Components (FMC)
This workshop includes 8 invited papers dealing with the overview oftechnical trends and the new related technologies on FPDs. In the technical sessions, papers deal with optical components, lamps, process
technologies, measurement systems, recycling technologies, etc. forFPDs.
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Workshop on CRTs (CRT)This workshop covers the entire field of CRT technologies. This year, a“Slim CRTs” topical session is organized.
Workshop on Plasma Displays (PDP)“PDP TV” is the key phrase for the most recent PDP R&D. The key
phrase involves three major technological issues; realizing the full-spec
HDTV performance, picture quality enhancement and reduction of power
consumption, and cost reduction. About 60 papers pursue these aims
from the viewpoints of gas discharge physics, materials, manufacturing
process, driving, image quality, and ergonomics. Invited papers fromleading researchers also highlight the technology advancements. Of special interest is a method of measuring the annual energy consumption of
TV sets, which is relevant to all the FPD technologies, proposed by Dr. L.
F. Weber.
Workshop on EL Displays, LEDs and Phosphors (PH)This workshop covers the latest R&D achievement in inorganic ELDs,
phosphors for emissive displays and solid-state illumination as well as
LEDs. Invited talks present large-screen full-color ELDs, flexible EL
sheets, the luminescent mechanism of blue phosphors for PDPs, phosphor for white LEDs, and potential application to phosphor materials andactive displays. Contributed papers also include interesting topics suchas nano-sized particle phosphors, thin-film phosphors and new phosphor
materials for ELDs and PDPs. In addition, joint sessions will be held with
the FED Workshop.
Workshop on Field Emission Display (FED)
Recent progresses in carbon-nanotube (CNT) field emitters and their applications for field emission displays (FED) are presented. Operating
characteristics of a surface-conduction electron-emitter display and alarge size CNT-FED are also discussed at the joint session with “PHWorkshop”.
Workshop on Organic LED Displays (OLED)This workshop includes recent developments in organic light-emitting materials, devices and display systems. New organic fluorescent and phosphorescent materials are reported, and highly efficient OLEDs using
these materials are presented. In addition, durability, the fabrication process and the evaluation system will be also discussed.
Workshop on 3D/Hyper-Realistic Display and Systems (3D)This workshop focuses on recent progress in 3D, holography and related
visual science. It also covers 3D, hyper-realistic image processing suchas multiview interpolation and high-fidelity color reproduction. Invited talks
in this workshop include the topics from forefront of 3D/holographic technologies and the recent researches into advanced display systems.
Workshop on Applied Vision and Human Factors (VHF)
This workshop covers the latest R&D achievments in the field of appliedvision and human factors such as psycho-physiological effects of displays
and their contents, still and moving image quality metrics, metrology, andimprovement techniques. Other topics are temporal and spatial color reproduction and viewing angle dependence of color, grey shades, and defect visibility. The workshop provides an excellent opportunity to interact
with world-renowned experts in the field.
Workshop on Projection and Large-Area Displays, and Their Components (LAD)
The worldwide hottest technologies for projection displays will make thisworkshop exciting. Invited talks will cover topics on an extremely highperformance projector for Digital TV applications. In the general talks,
light valve technology, light source and optical systems for enhancing display performance will be discussed.
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Workshop on Electronic Paper (EP)This workshop focuses on current topics on electronic paper, rewritable
paper, paper-like display, and flexible display. Various novel technologies
including electrophoretic, electrochromic, liquid crystal, electrowetting,and toner display systems will be reported. Concepts, systems, devices,materials, and humaninterfaces in this field are expected to be discussed.
Topical Session on MEMS for Future Displays and Related Electron
Devices (MEMS)
This session will cover all aspects of MEMS science and technologies for
future displays, imaging devices, and related electron devices. It includes
research areas such as materials, basic physics and fabrication processes. The session seeks to broaden the horizon of display technologies
into MEMS technologies. As this meeting is the very first held in IDW,
speakers are invited from research institutions around the world to inspire
display researchers. The session is proud to invite researchers from institutions such as Cambridge Univ., Kyung Hee Univ., MIT, Ritsumeikan
Univ., Samsung, Tohoku Univ., and Univ. of Tokyo (in alphabetical order).
Topical Session on Optical Information Accumulation and Imaging
Technique (AIT)This Topical Session focuses on recent developments in AITs. It also
covers THz imaging technique of biological samples and others by using
femtosecond laser, and tomography techniques of living single-cells toimprove the early detection and treatment of cancer. In addition, uniqueproperties of quantum dots can be used as tags for fluorescence visualization of structure and functions of biological systems. Moreover, a coherent control technique for ultrafast optical imaging is also presented.
Topical Session on Novel Imaging Devices and Systems (IDS)
Recent progresses in an ultra-high definition camera system, an ultrahigh speed video camera and a high color reproducibility camera system
are presented. Image pick-up characteristics of compact highly sensitive
image sensor, organic image sensor, CMOS time-of-flight range image
sensor, photon counting type X-ray image sensor are also discussed.
Outstanding Poster Paper Awards
Awards will be presented for limited number of outstanding poster papers
on December 9, from 12:20 to 13:30 in Room Tamamo (3F) in the ANA
hotel following Takamatsu Festival.
Exhibition
The IDW/AD ’05 exhibition of display components and systems will open
at 12:00 on December 6 and close at 14:00 on December 9. The latest
display devices, appliance, manufacturing equipment, measuring instruments, software systems and materials for display technologies will bepresented in Small Hall 2 (5F), Sunport Hall Takamatsu. Please take thisopportunity to enjoy an informative discussion with exhibitors.
December 6: 12:00 − 18:00
December 7: 9:00 − 18:00
December 8: 9:00 − 18:00
December 9: 9:00 − 14:00

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GENERAL INFORMATIONSPONSORSHIP
IDW/AD ’05 is sponsored by the Institute of Image Information and Television Engineers (ITE) and the Society for Information Display (SID).
WORKSHOP SITE
Sunport Takamatsu (Sunport Hall Takamatsu, Kagawa International Conference Hall, and ANA Hotel Clement Takamatsu)
2-1 Sunport, Takamatsu
Kagawa 760-0019, Japan
ON-SITE SECRETARIAT
Telephone and fax machines for IDW/AD ’05 use will be temporarily set
up in the secretariat room at Sunport Hall Takamatsu (Room 54) (December 5-9).
Phone: +81-87-823-9975
BANQUETA buffet-style banquet will be held on December 7 from 19:00 to 21:00 in
Hiten (3F), ANA Hotel Clement Takamatsu. As the number of tickets islimited, you are urged to make an advance reservation by completing theenclosed registration form and returning it with payment.
EVENING GET-TOGETHER WITH WINE
A get-together will be held on December 5 from 18:00 to 20:00 in theMain Hall Foyer (3F), Sunport Hall Takamatsu. Wine (sponsored by
Merck Ltd., Japan) will be served to participants in a relaxed atmospherefor informal discussion.
OUTSTANDING POSTER PAPER AWARDS AND TAKAMATSU FESTIVAL
Poster Awards will be given for outstanding poster papers, following Takamatsu Folk Entertainment, on December 9 from 12:20 to 13:30 in
Tamamo (3F), ANA Hotel Clement Takamatsu.
REGISTRATION
Registration is available in advance and on site. However, proceedings
books might not be guaranteed for on-site registrants in the case of an
unexpected excess of on-site registrations. Advance registration isstrongly recommended.

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Registration Fees
The registration fee for IDW/AD ’05 includes admission to the conference, a copy of the proceedings in printed book or USB memory form,
and CD-ROM. The proceedings in USB memory form can be selected
only by those who registered and paid by November 8.
Paid by Nov. 8
After Nov. 8¥30,000¥40,000
Member of SID/ITE/ASO＊
Non-Member¥35,000¥45,000¥8,000¥10,000
Student＊＊
Life Member of SID/ITE¥8,000¥10,000
Banquet¥8,000¥10,000
Note that the reduced registration fee must be paid by November 8. In
the case of payment after November 8 or on site, prices after November
8 will apply even if you sent the registration form by November 8, 2005.
Also, please note that the number of banquet tickets to register on site islimited.
＊ASO:Academic Supporting Organizations(See p.215 as well as “Supporting Organizations and Sponsors” at theend of each workshop/topical session section.)＊＊
Student ID is required.
For additional sets of the proceedings book or USB memory＊, and CDROM
Book & CD-ROM USB & CD-ROM
At the conference site
¥8,000¥8,000Airmail after the conference¥12,000
not available
Sea/Domestic mail after the conference ¥10,000
not available＊

Additional USB memory and CD-ROM Sets can be selected only in application with payment by November 8.
Payment
Three ways are provided for registration.
(1) e-Registration
Access the following URL.
http://idw.ee.uec.ac.jp/regist.html
e-Registration is acceptable until 24:00, November 18, 2005 (JST).
(2) Mail or Fax Registration
Complete the registration form (FORM A) at the centerfold and send it to
the secretariat, together with all necessary payments, no later than
24:00, November 18, 2005 (JST).
IDW/AD ’05 Secretariat
c/o Inter Group Corp.
Toranomon Takagi Bldg.
1-7-2 Nishi-shinbashi, Minato-ku, Tokyo 105-0003, Japan
Phone: +81-3-3597-1126 Fax: +81-3-3597-1097
E-mail: idw@intergroup.co.jp
The registration fee should be remitted by one of the following methods.
1. Bank transfer (only applicable to domestic participants) to:
Account name: IDW05
Account No.: 1236251 (ordinary account)
Bank Name: Sumitomo Mitsui Banking Corp.
Branch Name: Yamato Branch
Please attach a copy of your bank remittance form with theregistration form to avoid possible problems.
2. Bank check made payable to “IDW05,” together with the registrationform
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3. Credit card (only VISA or MasterCard accepted)
All above payments should be made in JAPANESE YEN.
Also, please note that personal and traveler’s checks will not be accepted.
(3) On-site Registration
Conference registration desk will be open:
December 5 (Mon.)
17:00−20:00
December 6 (Tue.)
8:30−18:00
December 7 (Wed.)
8:30−18:00
December 8 (Thu.)
8:30−18:00
December 9 (Fri.)
8:30−15:00
The on-site registration fee will be payable by:
1. Cash (JAPANESE YEN only)
2. Credit card (VISA or MasterCard only)
Bank transfer, bank check, and personal/traveler’s checks are not accepted. Payment by cash is recommended.
Cancellation Policy
Refunds for registration, the banquet, additional sets of proceedings etc.
will be made for written cancellations received by the IDW/AD ’05 secretariat by November 8. For cancellations received after November 8 or no-shows, refunds will not be made. After IDW/AD ’05 closes, however, a
set of the proceedings book/USB memory and CD-ROM will be sent to
the registrants who have paid the registration fees.
INQUIRIESIDW/AD ’05 Secretariat
c/o Inter Group Corp.
Toranomon Takagi Bldg.
1-7-2 Nishi-shinbashi, Minato-ku, Tokyo 105-0003, Japan
Phone: +81-3-3597-1126 Fax: +81-3-3597-1097
E-mail: idw@intergroup.co.jp
Please look at the website (http://idw.ee.uec.ac.jp/) for the latest information.

EVENING GET-TOGETHERWITH WINE
Monday, December 5
18:00 – 20:00
Main Hall Foyer (3F),
Sunport Hall Takamatsu(Sponsored by Merck Ltd., Japan)
See page 9 for details
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HOTEL AND TRAVEL INFORMATIONHOTEL RESERVATIONSIDW/AD ’05 executive committee has secured enough rooms for the participants. Participants who want to stay in Takamatsu during IDW/AD ’05
should make reservations directly with the hotel by themselves as follows. Reservation will be made on a first-come, first-served basis.
Methods of Application
1. Through the IDW/AD ’05 website(http://idw.ee.uec.ac.jp/hotelform.html)
2. By fax, using the enclosed Form B (Please copy the form.)
Confirmation from the Hotels
1. Confirmation will be sent to the applicants directly from the hotel a few
days after receiving your application.
2. If your application is not accepted by the hotel, please select anotherhotel and send your request for a reservation to the hotel through theweb or by fax using Form B.
3. In case there is no vacancy for your request again, please follow theprocedure described above.
VISAS
Visitors from countries whose citizens must have visas should apply to a
Japanese consular office or diplomatic mission in their respective country. For further details, please contact your travel agent or the local consular office in your country.
Attention: For some countries’ citizens, official documents prepared by
the secretariat will be needed. Please ask the secretariat for its application at least two months before the conference.
JAPAN RAIL PASS
Tourists visiting Japan from abroad can save with a Japan Rail Pass.
These 7-, 14-, or 21-day passes are valid for unlimited travel on the
Shinkansen trains (except NOZOMI) and other JR lines, plus its buses
and ferries.
For details, please ask your travel agent and purchase an exchange order at an authorized agent before coming to Japan. This pass cannot bepurchased in Japan.
After you arrive in Japan, you turn in the exchange order to receive yourJAPAN RAIL PASS at an applicable JR station that has a JAPAN RAILPASS exchange office.
Ex.
Narita Airport

Travel Service Center 11:30-19:00
Ticket Office
6:15-11:30, 19:00-21:45
Narita Airport Terminal 2 Travel Service Center 11:30-19:00
Ticket Office
6:30-11:30, 19:00-21:50
Kansai Airport
Ticket Office
5:30-23:00
JR Nagoya Station
JAPAN RAIL PASS
10:00-18:00
Exchange Corner
JR Takamatsu Station
Travel Service Center 10:00-18:00

CLIMATE
The average temperature in Takamatsu during the period is around 9℃,
with 13℃ in the daytime and 4℃ at night on the average.

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TAKAMATSU CITY
Takamatsu City is blessed with warm weather throughout the four
seasons and a magnificent natural setting: the Seto Inland Sea,
with its many islands, large and small; the green, gentle slopes of
the Sanuki Mountains; the lovely Sanuki Plain, with its reservoirs
and lovingly preserved shrines; the historic towns, alive with thearoma of a rich culture and history bequeathed to us by generation upon generation of our ancestors. With its central location on
the Seto Inland Sea, Kagawa Prefecture has flourished since ancient times through trade and as a cultural center. It has developed into a key hub in Shikoku, home to many government
branch offices as well as the local offices of many large corporations.
Ritsurin Park was designed to offer the visitor a different seasonalquality every number of steps. Kagawa has many sightseeing attractions, including Tamamo Park, Yashima, Takamatsu central arcade, National Resort Shionoe-Onsen, “Sunshine and Olive Island” Shodoshima, and a view of islands of all sizes dotting theSeto Inland Sea. Kotohiragu Shrine, with its sea-protecting deity
and Shikoku’s 88-temple pilgrimage route, including Zentsuji Temple and Okuboji Temple, are sought by visitors for their spiritualenvironments
PLACES OF INTEREST
Ritsurin Park
Ritsurin Park is a nationally designated cultural property and“place of scenic beauty.” It is located at the foot of the hill known
as Shiunzan and consists of six ponds and 13 hillocks. Formerly
belonging to a daimyolord’s family, visitors can walk through it andsee spectacular scenes from many vantage points.
Tamamo Park (The Ruins of Takamatsu Castle)
Tamamo Park is a refresh zone that is full of poetic sentiment andit is suitable as a first step for a trip to Takamatsu. When we hear
Sanuki, we associate Tamamo. This park was made in the trace ofTamamo castle in 1955. (Tamamo castle is said to be one of thethree best Japanese water castles). It has a beautiful garden andholds various events in the four seasons.
Yashima
Its view is the best beauty spot of the Inland Sea of Japan national park. Yashima, which is famous for the Genpei battle, is thebest lava tableland in the world. This outlook from the mountaintop
is as wonderful as the Aegean Sea. It s 8km to the east from thecenter of Takamatsu city to Yashima by car via Route 11. We recommend that you go to the mountaintop by a driving route thathas a mystery zone. If you use a highway, get off at Chuo interchange and move to Route 11. If you d like to spend time leisurely,
use the Kotoden train from the center of Takamatsu city to Katamoto station, and then climb to the mountaintop. There is a climbing route from there to Nagasaki No Hana. (It takes about 3.5hours.)
More information is available on
http://www.21kagawa.com/visitor/kanko/e-index.htm
http://www.city.takamatsu.kagawa.jp/kankou/

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ACCESS TO TAKAMATSU
KANSAI INT’LAIRPORT(OSAKA, KIX)NARITA INT’LAIRPORT(TOKYO, NRT)

JR Limited Express
Haruka¥3,180 / 48 min

INCHEON INT’LAIRPORT(SOUL, KOREA, ICN)

Limousine Bus¥3,000 / 75 min

JR Narita Express¥3,140 / 63 min
SHIN-OSAKASTATION

HANEDAAIRPORT(HND)

International Flight
105 min,3 flights/week
Domestic Flight
JR Shinkansen
70 min,Nozomi10 flights/day¥6,260 / 51 min
JR Shinkansen
Nozomi¥17,060 /211 minTOKYO
STATION

OKAYAMA STATION ＊TAKAMATSU
AIRPORT (TAK)Bus (via Akashi
JR Marine Liner
Kaikyo Bridge)(via Seto Ohashi Bridge)¥5,000 / 215 min¥1,470 / 55 min(Round Trip ¥8,300)

Bus¥740 / 35 min
or Taxi¥2,500-¥3,000/ 30 min

TAKAMATSU STATION
1 min walk

IDW/AD ’05 CONFERENCE SITE (SUNPORT TAKAMATSU)(as of July, 2005)＊30 min, by bus from Okayama Airport. (International)
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Tuesday

December 6

IDW/AD ’05
Tuesday, December 6
9:00 - 9:10

Sunport Hall Takamatsu Main Hall

Opening
Master of Ceremony：

Y. Nagae, Executive Chair

Opening Remarks
9:00
T. Sugiura, General Chair,
H. Mimura, Program Chair
9:10 - 10:30

Sunport Hall Takamatsu Main Hall

Keynote Addresses
Co-Chairs：

H. Mimura, Program Chair
T. Sugiura, General Chair

Keynote Address - 1 The $100 Laptop
9:10
N. P. Negroponte
MIT, USANo abstract was submitted.
Keynote Address - 2 Future Trend of Broadband and Ubiquitous
9:50
Networks
T. Aoyama
Univ. Tokyo, Japan
In this talk, key technologies in photonic networks which enable toconvey huge amount of traffic are presented. There are three categoriesof the key technologies for photonic networks which are high speed
DWDM optica transmission technologies, high throughput optical routing
and switching technologies and control technologies of optical
networking such as GMPLS. Broadband applications over such highspeed photonic networks are also shown.

----- Break -----

10:40 - 11:50

Sunport Hall Takamatsu Main Hall

Invited Addresses
Co-Chairs：

16

Y. Iimura, Program Vice-Chair
T. Miyashita, Program Vice-Chair

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Invited Address - 1 The Future of Mobile Multimedia
10:40
Communications
T. Horikoshi
NTT DoCoMo, JapanThe mobile phone has become an essential part of peoples’ daily lives
as the communications infrastructure for both voice and data. DoCoMo’s
3G service “FOMA” has solidified its position as the next-generation
infrastructure faster than expected. This paper introduces an overview of
wireless technology for mobile communication, and notes therequirements of mobile phone display. Finally, we introduce the strategy
of reality communication that is based on audio, visual, and biologicalinformation.
Invited Address - 2 Present State and Prospect of LED for Back
11:15
Light Module in Display Applications
S. Muguruma
Nichia, Japan
Today, a lot of type of back lighting is put to practical use, with LCD
technology. From last to this generation, CCFL has been used for astandard lighting source for back lighting. In this generation, LED is
becoming a kind of major lighting source, especially for small size LCD
back lighting. With this presentation I try to explain about present status
of LED back lighting, also prospect of LED back lighting in near future.

----- Lunch -----

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Tuesday

December 6

Workshop on
LC Science and Technologies
Tuesday, December 6
13:30 - 15:00

Kagawa International Conference Hall

LCT1: New Materials for LCD Applications
Chair：
Co-Chair：T. Uchida, Tohoku Univ., Japan
M. Ozaki, Osaka Univ., Japan

LCT1 - 1:
13:30

Invited Ferroelectric Particle/Liquid Crystal
Dispersions for Display Applications
J. West, C. Cheon*, A. Glushchenko**, F. Li
Kent State Univ., USA*Hoseo Univ., Korea**Univ. of Colorado, USA

We present a new method of modifying the properties of liquid crystals
by doping them with ferroelectric micro- and nanoparticles. In contrast to
the traditional time consuming and expensive chemical synthetic
methods these particle dispersion offer a simple means to enhance theelectro-optical performance of many liquid crystal materials. We
demonstrate that by changing the concentration and type of ferroelectric
particles we can substantially change the physical properties of nematic,
smectic, and cholesteric liquid crystal materials. We are able to increase
the dielectric constants, birefringence, phase transition temperatures,and even the order parameter of the liquid crystal mixtures.
LCT1 - 2:
13:55

Invited Fast Electro-Optical Switching in PolymerStabilized Blue Phases
H. Kikuchi*,**, Y. Hisakado*, K. Uchida*, S. Hirata*,
Y. Haseba*,***, T. Nagamura**Kyushu Univ., Japan**Solution Oriented Res. for Sci. & Tech., Japan***Chisso, Japan

Blue phases, kinds of liquid crystal phases, have two major advantages
over commonly used nematic phases. First, the response is much faster.
Second, the zero-electric field state is optically isotropic unlike nematic
phases, that is, no surface treatment (no rubbing) is necessary, leading
to a simplification of the fabrication process. We demonstrate thesufficiently large electric field-induced birefringence and the microsecond response of the polymer-stabilized blue phases without any
surface treatment.

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Tuesday

December 6

LCT1 - 3
14:20

Fabrication of Polymer Films with Micro Domains ofUniformly Aligned Columnar Mesophase by the
Combination of Infrared and UV Photonic Processes
Y. Shimizu, H. Hori, H. Monobe, M. Heya*, K. Awazu*
AIST, Japan*Osaka Univ., Japan

Micro-sized domains with the uniformity of molecular alignment of acolumnar liquid crystal with polymerizable groups were formed bypolarized infrared laser to excite the aromatic C-C stretching mode ofvibration. The following in-situ photopolymerization gave a polymer filmin which such newly formed domains of mesophase are maintained. The
domain structures were not be broken in a wider range of temperature,indicating the combination of polarized infrared irradiation and UVphotopolymerization could provide functional polymer devices performing
electronic as well as optical functions in usage of highly orderedmesophase materials.
LCT1 - 4
14:40

Carbon Nanotube-Doped Liquid Crystal Devices
C.-Y. Huang, C.-Y. Hu, H.-C. Pan, K.-Y. Lo*
Nat. Changhua Univ. of Education, Taiwan*Nat. Chia Yi Univ., Taiwan

Electro-optical characteristics of carbon nanotube-doped liquid crystal
devices were investigated. The measured results reveal that anisotropic
carbon nano-solids modify the dielectric anisotropy and the viscosity of
the liquid crystal-carbon nanotube mixture, hence significantly modifying
the threshold voltage and the switching behavior of the liquid crystal
device. Doping a small amount of carbon nanotubes into the liquid
crystal mixture is effective in improving the electro-optical characteristics
of a LC device when the employed LC mixture is viscous.

----- Break -----

15:10 - 16:35

Kagawa International Conference Hall

LCT2: Fast Responce LCDs
Chair：
Co-Chair：J. West, Kent State Univ., USA
H. Yokoyama, AIST, Japan

LCT2 - 1:
15:10

Invited Progress of OCB-Mode LCDs and Their
Possibility in Future Application
T. Uchida
Tohoku Univ., Japan

Recently, large area liquid crystal television displays are progressed
rapidly using in VA and IPS modes. In this application high quality
property is required, and the optically compensated bend mode (OCBmode) appeared newly in the market as a TV display last year. In thispaper, the historical background of the OCB mode, its excellent
properties, the design method and the future application are discussed.

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Tuesday
LCT2 - 2
15:35

December 6
Bend State Stability with Dynamic Driving in the
OCB Panel
T. Kojima, T. Miyashita, T. Uchida, K. Nakao*,
H. Wakemoto*Tohoku Univ., Japan*Toshiba Matsushita Display Tech., JapanOCB (Optically Compensated Bend) mode is promising for the LCD-TV
because of its significance such as fast response and wide viewing
angle. One of the important points of this mode is to stabilize the bend
state. We have clarified the difference of bend state stability between
static driving and dynamic driving. Furthermore, we enabled estimationof bend stability from the physical constants of material.
LCT2 - 3
15:55

Fast Response No-Bias-Bend LCDs
F. S. Y. Yeung, Y. W. Li, H. S. Kwok
Hong Kong Univ. of Sci. & Tech., Hong Kong

Fast response No-Bias-Bend (NBB) Liquid Crystal Displays using nanotextured high pretilt angle alignment surfaces has been demonstrated.
Such alignment surfaces allow high pretilt angles of over 45o to befabricated reliably. This NBB-LCD has a rise time of 1.8ms and a falltime of 80μs. The average response time is less than 1ms.
LCT2 - 4
16:15

New Measurement Method of Three Viscosities of NType LC Using VA Mode Cells
T. Kishimoto, T. Miyashita*, Y. Kuratomi*, H. Yaginuma,
T. Ishinabe*, T. Uchida*
Aomori Pref. CREATE, Japan*Tohoku Univ., Japan

We have already developed a novel method for measuring the threeviscosities of p-type nematic liquid crystals using a separate fitting
procedure (MVS-method). In another paper given at this conference, we
proposed a method that can be applied to n-type liquid crystals, inwhich an initial bias voltage is applied. In this paper, we confirmed thevalidity of our method experimentally.

----- Break -----

16:50 - 18:15

Kagawa International Conference Hall

LCT3: LC Alignment Process
Chair：
Co-Chair：

20

H. Kikuchi, Kyushu Univ., Japan
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Tuesday
LCT3 - 1:
16:50

December 6
Invited Photo-Rubbing: A Practical Photo-Alignment
Solution
H. Yokoyama*,***, M. Kimura*,***AIST, Japan**JSR, Japan***NanoSys. Solutions, Japan

A novel photo-alignment scheme using normally incident periodicallyintensity-modulated UV light has been developed and demonstrated toefficiently yield a stable pretilt angle of nematic liquid crystals by single
exposure. The scheme, referred to as the “photo-rubbing”, consists in
unidirectional scan of the intensity-modulated UV light over the photoalignment film, which causes asymmetrical photo-reactions in the film.
We show here its suc-cessful application to multi-domain alignment
proc-essing. Thanks to the normal incidence, the photo-rubbing removes
the instrumental disadvan-tages of the conventional oblique incidence
technique, thereby providing a true practical solution for photoalignment.
LCT3 - 2
17:15

The Surface Energy of Polyimide Alignment Layer
after Ion-Beam-Alignment Process
J.-H. Jaw, Y.-H. Chen, K.-W. Wang, S.-F. Liu, H.-A. Li,
O. Sun, S.-T. Yang
Chunghwa Picture Tubes, Taiwan

It would result in the different surface energy on the polyimide alignment
layer with variant recipe of post treatment. In this study, the contact
angle of water of Recipe A is smallest due to the surface energy with
Recipe A is the minimum, and then the reaction ability of polyimidealignment layer with Liquid Crystal and seal agent would be weak.
Therefore, better display performance could be obtained from theRecipe A of post treatment.
LCT3 - 3
17:35

High Contrast Ratio In-Plane-Switching TFT-LCD
with Ion Beam Irradiated Polyimide Film as LC
Alignment Layer
T. Suzuki, J. Matsushima, Y. Sasaki, M. Sugimoto,H. Tanaka*, C. Mizoguchi*, S. Onda, K. Mimura,
K. Sumiyoshi
NEC LCD Tech., Japan*NEC Kagoshima, Japan

The ion beam irradiation technique has been studied as an LCalignment process for some years. The anchoring strength is regarded
as an important issue with such a non-rubbing alignment technique. We
have evaluated the anchoring strength of ion beam irradiated polyimidealignment layers with a method based on a non-elastic model to find the
optimum materials and conditions for the ion beam LC alignment
process. Our prototype of in-plane-switching TFT-LCD features a highcontrast ratio of 1200:1.

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Tue./Wed.
LCT3 - 4
17:55

December 6/7
Induction of Splay-to-Bend Transition Using Twist
Disclination Method for OCB-Mode LCDs
K. Kuboki, T. Miyashita, T. Ishinabe, T. Uchida
Tohoku Univ., Japan

Optically compensated bend (OCB) mode liquid crystal displays (LCDs),
which have fast response, require an initial transition from a splayalignment to a bend alignment before operation. We clarified that thetwist disclination act as a nucleus of the transition and also clarified thecondition to form the nucleus. Based on this result, the transition was
successfully induced by forming the right- and left-handed twistalignments by using partial rubbing treatment or micro protuberances.
Author Interviews
18:20 - 19:20

Wednesday, December 7
9:00 - 10:25

Kagawa International Conference Hall

LCT4: LC Mode
Chair：
Co-Chair：

H. Okada, Toyama Univ., Japan
S. Kondoh, Citizen Watch, Japan

LCT4 - 1:
9:00

Invited Liquid Crystal Optical Security Device with
Polarized Latent Images
R. Yamaguchi, S. Sato
Akita Univ., Japan

Optical security devices using alignment patterned LC cells areproposed. Latent images with continuous gray levels and high spatial
resolution can be optically written and erased by using one or two
polarizers. Two or three latent images can also be created in one guest
host mode LC cell. Moreover, the alignment patterned LC cell is utilized
as a key cell to visualize the latent information.

IMID / IDMC2006
Aug. 22 – 25, 2006
Daegu, Korea
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Wednesday
LCT4 - 2
9:25

December 7
An Optical Configuration of Super IPS LC Cell for
Symmetrically Wide Viewing Angle
J. H. Lee*,**, C. H. Oh*, W. R. Lee***, J. C. Kim**,G. D. Lee****LG.Philips LCD, Korea**Pusan Nat. Univ., Korea***Dong-A Univ., Korea

In this paper we propose a novel optical configuration of the Super IPS
LC cell which exhibits wide viewing angle even in diagonal direction. In
addition, symmetrical wide viewing angle has been achieved by applying
splayed homogeneous LC alignment. The proposed optical configurationconsists of the splayed LC cell and uniaxial retarders, not biaxial films
because it would be very hard to provide uniformity in large size LC
display. The optical principle of the proposed configuration is explainedon the Poin’care sphere and experimental result proves the improved
optical characteristics of the proposed configuration.
LCT4 - 3
9:45

Minimization of Dead Zone in a Transflective PVA LC
Cell
J. I. Baek, J. C. Kim, T.-H. Yoon
Pusan Nat. Univ., Korea

We propose an electrode structure for high bright-ness in a transflective
PVA LC cell. Disclination lines of the bright state are minimized so that
we obtained high light efficiency of the reflective part. By optimization ofparameters, we can match the driving voltages of the reflective modewith that of the transmissive mode. The wide viewing angle property isalso achieved by using a compensation film.
LCT4 - 4L
10:05

Enhancement of the Performance of LCDs by
Doping the Nanoparticles of MgO: The Reduction of
Operating Voltage and Response Times Particularly
Delay Times and the Increase in the OpticalThroughput
S. Sano, T. Miyama*, Jun. Xu**, K. Takatoh***,S. Kobayashi*
Ube Material Ind., Japan*Tokyo Univ. of Sci. Yamaguchi, Japan**Fudan Univ., China***Toshiba Elect. Eng., Japan

LCDs, such as TN, ECB, and VAN-mode doped with the nanoparticlesof MgO exhibit the enhancement in their performance. As an example, a
TN-LCD doped with the nanoparticles of MgO (0.1wt%) exhibits the
reduction in the operation voltage by 26%, the reduction of the delay
time by 50%, and the increase in the optical throughput by 10 times
even at a low temperature, say at -10℃．

----- Break -----

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Wednesday
10:40 - 12:00

December 7
Kagawa International Conference Hall

EP5/LCT5: Flexible LCD
Chair：
Co-Chair：T. Nose, Akita Pref. Univ., Japan
Y. Toko, Stanley Elec., Japan

EP5/LCT5 - 1
10:40

Flexible Field-Sequential-Color FLC Displays Using a
Bendable Backlight Sheet with LED Chips
H. Fujikake, H. Sato, T. Murashige, Y. Fujisaki, H. Kikuchi,
T. Kurita
NHK, Japan

We have developed a flexible full color moving-image display using aplastic-substrate-based monostable ferroelectric liquid crystal (FLC)
panel and a bendable backlight sheet with thin small LED chips. The
fabricated A4-sized FLC matrix panel with 96 x 64 image pixels waslaminated with the three-primary-color backlight sheet and optical
diffuser and spacer films, and was driven by an active matrix techniqueusing external switch transistor array based on a field-sequential-color
method.
EP5/LCT5 - 2
11:00

Improvement of Dichroic Polymer Dispersed Liquid
Crystal (PDLC) Performance for Flexible Display
Using Lift-off Technique
A. Masutani, T. Roberts, B. Schuller, A. Sakaigawa*,
A. YasudaSony Deutschland GmbH, Germany*Sony, Japan

The performance of dichroic sponge polymer dispersed liquid crystals(SPDLC) display can be improved further by incorporating a lift-off
method using a substrate covered with a fluori-nated-organosilane. The
resulting cells achieve improved contrast, improved response time,smaller switching voltages and better uniformity, compared with thepreviously reported dichroic SPDLCs. The display exhibits near magazine-standard reflectivity and contrast ratio. Fur-thermore, the lift-off
method enables rubbing-free, low temperature, roll-to-roll processing
techniques. Such displays are suitable for flexible sol-vent-sensitive,
organic thin-film transistors (TFTs).
EP5/LCT5 - 3
11:20

Inkjet Printed Cholesteric Liquid Crystal Display
J. M. Ding, Y. A. Sha, L. P. Hsin, H. L. Wang, C. C. Liao,
Y. R. Lin, C. C. Lu, C. H. Chen, I. C. Chen
Ind. Tech. Res. Inst., Taiwan

The inkjet printing technology has been used to manufacture flexible
cholesteric liquid crystal displays. The displays are fabricated from top tobottom by forming various functional layers on flexible substrates. Stablecholesteric liquid crystal droplets are obtained and jetted to fill the pixel
areas by a piezoelectric drop-on-demand inkjet printer. Our technology
has provided a novel process to fabricate a flexible, bistable, and multicolor reflective display with single display medium layer.

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Wednesday

December 7

EP5/LCT5 - 4
11:40

Flexible Photoaligned Permanent Bistable TN-LCD
X. H. Li, F. S. Y. Yeung, V. G. Chigrinov, H. S. Kwok
Hong Kong Univ. of Sci. & Tech., Hong Kong

Flexible Bistable Nematic Liquid Crystal Display (π-BTN) based on
photo-alignment technology is developed on two 200μm plastic
substrate. This display can be switched between φ and π + φ twisted
states by means of breaking anchoring condition on one of the plastic
substrates. Low baking temperature of 100℃ is needed to avoid hightemperature distorting the substrates. The advantages of bothphotoalignment and π-BTN technologies, such as no contamination ofelectrical charges and impurties, high contrast and bistability are shown.

----- Lunch -----

13:40 - 15:05

Kagawa International Conference Hall

LCT6: Panel and Evaluation
Chair：
Co-Chair：H. Seki, Hachinohe Inst. Tech., JapanR. Yamaguchi, Akita Univ., Japan

LCT6 - 1:
13:40

Invited Low Power Consumption Displays Using
Ferroelectric Liquid Crystal
S. Kondoh, A. Suguro, K. Noguchi, K. Iio, K. Ueda,
N. Takahashi, M. Fujino
Citizen Watch, Japan

Now, we require low power consumption instruments for environmental
conservation. So, We have been developing low power consumption
displays using ferroelectric liquid crystals (FLC) with memory effects. It isdifficult to get good alignment and memory effects by using ferroelectricliquid crystal displays (FLCDs) with organic alignment films. But we getgood FLCDs with inorganic alignment films such as SiO or SiO2 in thiswork. And we have developed FLCDs using plastic substrates with a
new spacer technique for flexible displays.
LCT6 - 2
14:05

Field-Sequential Color LCD Driven by Optimized
Method for Color Breakup Reduction
H. Yamakita, M. Sakai, Y. Taniguchi, J. Asayama, K. Adachi
Matsushita Elec. Ind., Japan

We have built a prototype 2.2 in. FSC-LCD using novel LC materials, inorder to optimize the driving method for color breakup reduction. The
method we applied is the way to insert the intermediate color among the
RGB periods. In this report, we propose an optimized driving method of
FSC-LCD for color breakup reduction and its influence into power
consumption.

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Wednesday
LCT6 - 3
14:25

December 7
10.4-in. Hybrid Color Reflective TFT-LCD
Y. Asao
Canon, Japan

This paper shows the 1st reflective hybrid color (HC) LCD with active
matrix driving. Color displaying method, prototype configuration and its
image output are discussed. The size is 10.4 inch and the resolution is1536 lines in the horizontal direction by using mass-produced XGA(1024x3x768) TFT panel, which is 1.5 times higher resolution than thatof the conventional RGB-CF method. This prototype can show the highresolution character and the natural photo image with sufficient quality inthe practical use.
LCT6 - 4
14:45

Cell Parameter Measurements of Vertical Alignment
Liquid Crystal Cells by Using Stokes Parameters
M. Kawamura, K. Sato, S. Sato
Akita Univ., Japan

We propose a two-dimensional (2D) measurement method for
determining cell parameters such as a cell thickness and pretilt angle ina vertical alignment (VA) liquid crystal (LC) cell. The microscopic cellparameter distributions can be obtained by measuring Stokes
parameters of the LC cell as changing an oblique angle of the incident
light upon the LC cell.
Author Interviews
17:30 - 18:30

15:00 - 17:00

Exhibition Hall

Poster LCTp1: LCD Mode
LCTp1 - 1

The Comparison between Characteristics of FringeField Switching Mode Using Positive & Negative LC
J. B. Park, H. Y. Kim, Y. H. Jeong, S. Y. Kim, Y. J. Lim
BOE TFT-LCD SBU, Korea

Under backlight spectrum considering real array and C/F substrate, we
found out optimal retardation and compared the chromaticity in positive
and negative LC. In both +LC and -LC, under rubbing direction, thechromaticity changes little regardless of increase of retardation.
However, under observation making 45° regarding rubbing direction,
as d or∆n increases toward optimal retardation, the chromaticity shift is
weakened in +LC, while that is more significant in -LC.

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Wednesday
LCTp1 - 2

December 7
A Novel Color Hybrid Liquid Crystal Display
K. H. Liu, C. H. Chen, Y. A. Sha, J. S. Hsieh, C. C. Hsiao,
P. J. Su, C. Y. Lin, K. H. Chang, J. D. Chen, C. C. Huang,
S. Y. Fuh, H. L. Wang, Y. C. Chen, S. C. Jeng, Y. R. Lin,C. C. Liao, J. W. Shiu
ERSO/ITRI, Taiwan

A novel hybrid LCD technology has been developed. By replacing a
glass color filter with a plastic color filter, a lighter and thinner hybrid
LCD can be obtained. A 4” QVGA prototype has been demonstrated. A
hybrid LCD can reduce 35% thickness and 36% weight compared with aconventional LCD with 2 glass substrates. This technology can be agood solution for portable display.
LCTp1 - 3

Electro-Optic Characteristics of Fringe-Field Driven
Transflective LCD with Dual Cell Gap
J. H. Song*, D. H. Lim*, J. B. Park*, M. S. Kim*,**,Y. H. Jeong*,**, H. Y. Kim*, S. Y. Kim*, Y. J. Lim*, S. H. Lee***BOE TFT-LCD SBU, Korea**Chonbuk Nat. Univ., Korea

We have fabricated transflective liquid crystal (LC) cell with dual cell gap
driven by fringe field using a nematic LC with positive dielectricanisotropy and studied electro-optic characteristics of the cell. This LC
cell with optimized cell parameters shows low wavelength dispersion,
low power consumption and contrast ratio greater than 5 in polar angles
of over 50°in all directions and over 80°in certain azimuthal crosssectional planes in the reflective and transmissive parts.
LCTp1 - 4

Transflective LCD with Wide Viewing Angle and Low
Driving Voltage
I. Fukuda, Y. Sakurai, T. Nakata, Y. Sakamoto
Kanazawa Inst. of Tech., Japan

We investigated the numerical relationship between the electro-opticalproperties and the on-voltage of a TFT-LCD, specifically the refractive
indices of retardation films in a transflective homogeneous- cell with two
biaxial retardation films, in order to reduce power consumption andincrease viewing angles. Our results show that the LCD produces anachromatic high-quality image with wide viewing angles when the device
parameters and refractive indices of retardation films are optimized,even when the on-voltage of the TFT-LCD is reduced to 2.0V.
LCTp1 - 5

Optical Configurations of Horizontal-SwitchingTransflective LCDs in Double Cell Gap Structure
G. S. Lee, Y.-S. Kim*, W.-S. Kang*, I.-B. Kang*, J. C. Kim,
T.-H. Yoon
Pusan Nat. Univ., Korea*LG.Philips LCD, Korea

We propose optical configurations of horizontal-switching transflective
displays in double cellgap structure. All the configurations are designedon the basis of wide-band quarter-wave structure so that they show
excellent spectral characteristics over the entire visible wavelengths

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Wednesday
LCTp1 - 6

December 7
Lateral Field Effect on Horizontal Switching in a
Bistable Chiral Splay Nematic Liquid Crystal Device
J. H. Choi, C. G. Jhun, C. P. Chen, H. Shin, J. C. Kim,
T.-H. Yoon
Pusan Nat. Univ., Korea

The splay and π twist textures are used for the bistable state of abistable chrial splay nematic (BCSN) liquid crytal device. Each state canbe switched by applying a vertical or a horizontal electric field. In thiswork, we investigated the effect of the lateral field on the transition fromthe twist state to the splay state as we vary the amplitude and the pulse
width of the lateral field.
LCTp1 - 7

Study on Initial Setting Voltage and Response Timeof the Optically Compensated Splay Cell
S. M. Oh, B. S. Jung, J. Y. Hwang*, D. S. Seo*, S. H. Lee
Chonbuk Nat. Univ., Korea*Yonsei Univ., Korea

Setting voltage and response time of the optically compensated splay(OCS) cell have been studied as a function of surface pretilt angle.
Setting voltage decreases and response time becomes faster withdecreasing tilt angle. Further, we found that the liquid crystal domain
surrounded by air had OCS structure initially.
LCTp1 - 8

Dynamics of Locked Super Homeotropic Mode
Depending on Size and Shape of Patterned Polymer
Y. M. Jeon, S. H. Park, M.-H. Lee, J. M. Rhee, S. H. Lee
Chonbuk Nat. Univ., Korea

We have studied new vertically aligned liquid crystal mode for large size
liquid crystal display with wide viewing angle characteristics and fast
response time. Locked super homeotropic (LSH) mode, in which
vertically aligned LCs are locked by surrounding polymer walls such as
cubic, hexagonal and cylinder, has a simple fabrication process becauseof no rubbing process and free from spacer. In the device, the LCs tilt
down symmetrically around the center of the cell with bias voltage andthus, it exhibits wide viewing angle characteristics.
LCTp1 - 9

Color Switching in Liquid Crystal Display Using High
Dichroic Fluorescent Dyes
R. Yamaguchi*, K. Moriyama*, S. Sato*, X. Zhang**,
T. Thiemann**, S. Mataka***Akita Univ., Japan**Kyushu Univ., Japan

Color switching properties in fluorescent liquid crystal displays (LCDs)
are improved by using high dichroic fluorescent dyes of which dichroic
ratio is about 9. A fluorescent homogeneous and twisted nematic (TN)LC cells are stacked and the voltage is applied to the TN cell. The
fluorescent color can continuously be changed from the color of TN cellto that of homogenous cell with high chroma.

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Wednesday
LCTp1 - 10L

December 7
Optically Rewriteable LC Display with a HighContrast and Long Life Time
A. Murauski, V. Chigrinov, X. Li, H.S. Kwok
Hong Kong Univ. of Sci. & Tech., Hong Kong

We propose an optically rewriteable TN LC display. TN LCD does not
require an electronic scheme, a power supplier, conductive layers insidedevices, which provides a possibility to use this type display in plastic
cards, registration and other systems. We discuss the construction andmethods of a rewriting image in optically rewriteable LC display with ahigh contrast and a long life time.
LCTp1 - 11L

An Alternative OCB Mode with Reverse-WavelengthDispersion Quarter Wave Plate
C. P. Chen, C. G. Jhun, S. R. Lee, T.-H. Yoon, J. C. Kim,
J. D. Noh*, D. H. Suh*, J. Y. Lee*
Pusan Nat. Univ., Korea*BOE HYDIS Tech., Korea

An alternative optically compensated bend (OCB) liquid crystal display
featuring reverse-wavelength-dispersion (RD) quarter wave plate (QWP)
is to be presented. The application of this newly developed birefringent
plate significantly simplifies the existing structure for wide-viewing OCB
mode. Simulated results manifest its standout performance incomparison with other counterparts.
LCTp1 - 12L

Study on the Effects of Step-Coverage Structure forParasitic Capacitances
M. S. Jung*,*, D. W. Kim*,**, T. Won*,**, H. J. Yoon**,**,
C. S. Lee**,**, S. I. Yoon**,**, S. H. Yoon**,***Inha Univ., Korea**Sanayi Sys., Korea

In this paper, we report the influences of the step-coverage on theeffective capacitances in LC cell. In this work, we have analyzed theconventional TN mode LC cell by using the numerical simulator,
TechWiz LCD. In order to calculate effective capacitances, the energy
method is used. As a result, we found that the step-coverage structurecauses the parasitic capacitance between the data line and the pixel
electrode to be about 18 times as large as the parasitic capacitanceresulted from a normal planar structure.
LCTp1 - 13L

Color Switching in Bistable Ferroelectric LCDs
P. Z. Xu, S. Valyukh*, X. H. Li, V. Chigrinov
Hong Kong Univ. of Sci. & Tech., Hong Kong
*Dalarna Univ., Sweden

Memorizable color switching in bistable ferroelectric liquid crystal
displays for transmissive mode is studied. Optimal configuration
parameters with retardation film taken into account are obtained insimulation. Prototype cells with memorized color are fabricatedaccordingly based on the simulation results, which agree well withtheoretical results and show very good quality.

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Wednesday

December 7

LCTp1 - 14L

Simulation of Wide Viewing Angle Characteristic in
Simple Mode LCD using Different Rubbing Direction
D.-W. Kim
Inha Univ., Korea*Sanayi Sys., Korea

In this paper, we propose an idea to implement multi-domain technology
in two simple mode cells. In order to implement multi domain, we
designed a VA and ECB mode cell which has different rubbing
directions in unit cell. Optical characteristics are calculated by anumerical simulator(TechWiz LCD) and compared with that of PVA
mode. The simulation results revealed that the proposed cells have wideviewing angle characteristic exactly like that of PVA mode.

15:00 - 17:00

Exhibition Hall

Poster LCTp2: LCD Alignment
LCTp2 - 1

A Plastic Color TN-LCD Using a Photo Alignment
MethodK. Maruyama, Y. Ono, Y. Suzuki*, T. Ikariya
TRADIM, Japan*Dainippon Ink & Chems., Japan

We have successfully developed a plastic color twisted nematic liquid
crystal display (TN-LCD) using a photo-alignment (PA) method. The
plastic color TN-LCD is very thinner and lighter than glass TN-LCDs. We
can drive it as a multiplexed TN-LCD of 1/5 duty. Moreover, we carriedout continuous coating with azo dye solution on a plastic substrate andcontinuous PA treatment. It is confirmed that LC alignment on a plastic
substrate is possible under continuous processes.
LCTp2 - 2

Improvement of Liquid Crystal Electric-Characteristic
by Plasma Beam Alignment
C. Y. Lee, P. C. Liu, C. W. Chen, H. C. Tang, S. Lin,Y. Chang, W. T. Hsien, Y. J. Shih, J. M. Chen, C. D. Lee
Ind. Tech. Res. Inst., Taiwan

The plasma beam alignment (PBA) was treated by a sheet-like flux ofaccelerated plasma generated from anode layer thruster (ALT). PI and
DLC film were treated in anisotropic plasma beam with ALT andconventional rubbing process. We can observe smoothly geometry on
the surface by plasma beam treated and scratch surface by mechanicalrubbing. Furthermore, we can reach the high voltage holding ratio(VHR), low residual direct current (Rdc) and good anchoring energy by
the plasma beam treatment.

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Wednesday
LCTp2 - 3

December 7
Study on the Influence of Rubbing on the MultiDomain Ch-LCD
Z. Jun, L. Qing, F. Weitao, T. Yongming, W. Baoping
Southeast Univ., China

The technology of rubbing is one of important methods to form themulti-domain structure in the reflective cholesteric liquid crystal display.
We have studied the influence of the pile impression, the rotation
frequency and the roller transport velocity on the phase transition
voltage of the CHLCD respectively. The results of the experiments
showed that a gentle pile impression with a small rotation frequency anda fast roller transport velocity can achieve a low phase transition voltageof the multi-domain CHLCD.
LCTp2 - 4

New Photo-Alignment Technology Using Azo-Dye
Materials
S.-J. Liu, J.-R. Zhang, Z.-H. Ling
Chinese Ac. of Sci., China

This paper describes a new photo-alignment technology using polyimide
and azo-dye materials. We study the alignment performance of this new
material called SY04, which contains two azo groups. In order toimprove stability of the photo-aligned film, a sort of PI material is mixed.
A fast response performance and a good electro-optical performance
are acquired. These alignment materials can provide good thermostability and is stable under weak UV irradiation as well.
LCTp2 - 5L

Vertical Alignment of Liquid Crystal on a-SiOx Thin
Film Surface by the Ion Beam Exposure
P. K. Son, S. S. Cha, J. H. Seo, S. P. Lee, J. C. Kim,
T.-H. Yoon, S. J. Rho*, B. K. Jeon*, K. H. Kim*
Pusan Nat. Univ., Korea*Samsung Elect., Korea

Liquid crystal can be aligned vertically by the rotational obliqueevaporation of a-SiOx thin films. However, switching behavior of liquid
crystal along random directions will result in disclination lines when an
electric field is applied. By using the ion beam exposure, we canachieve uniform vertical alignment without disclination lines. We cancontrol the pretilt angle by changing ion beam parameters, such as theion beam energy, the incident angle, and the exposure time. An
excellent electro-optic switching behavior of an ion beam aligned liquid
crystal cell was observed with the oblique ion beam exposure on a SiOx
thin film surface.

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Wednesday

December 7

15:00 - 17:00

Exhibition Hall

Poster LCTp3: Materials
LCTp3 - 1

Novel Glass-Forming Liquid Crystals Containing
Acrylic Acid Trimer Core Unit for Optical Films
S. Nakanishi*,**, Y. Fujimura**, M. Ueda****Japan Chem. Innovation Inst., Japan**Nitto Denko, Japan***Tokyo Inst. of Tech., JapanTo provide uniformly aligned liquid-crystalline (LC) films, novel
amorphous medium molecular mass nematic LCs have been developed.
The nematic LCs consist of acrylic acid trimer as a core structure andmesogenic moiety. The re-sulting materials showed nematic LC phaseand vitrified to form monodomain films at room tem-perature. This glassy
LCs miscible with a chiral photochromic dopant, providing monodomainaligned defect free cholesteric reflection films, which color is tunable by
UV-irradiation.
LCTp3 - 2

Physico-Chemical Properties of Compounds Having
a Lactone Moiety at the Terminal Position
Y. Morita, K. Era, H. Okamoto, S. Takenaka
Yamaguchi Univ., Japan

This paper describes physico-chemical properties of new liquid crystal
materials having a lactone moiety such as chromen-2-one and 3,4 dihydrochromen-2-one at the terminal position. All compounds show alarge dielectric anisotropy (∆ε), and these results suggest that theterminal lactone group such as chromen-2-one and 3,4-dihydrochromen2-one are useful components for enhancing positive ∆ε. The effect ofterminal group will be discussed in terms of the chemical andelectrostatic properties of the molecules.
LCTp3 - 3

Effects of Carbon Nanotubes on Electro-Optic
Characteristics of TN-LC Cells
S. Y. Jeon, K. A. Park*, I.-S. Baik, K. H. An*, J. Choi,
S. H. Lee, Y. H. Lee*
Chonbuk Nat. Univ., Korea*Sungkyunkwan Univ., Korea

Twisted nematic (TN) liquid crystal (LC) cells doped by carbon
nanotubes (CNTs) with various concentrations have been fabricated andtheir electro-optic characteristics have been studied. No significant
difference in voltage-dependent transmittance curves between pure and
CNT-doped LC cell is not observed. Nevertheless, CNT-doped LC cells
show reduced residual DC and improved response time. Introducing
CNTs in a LC cell may affect the physical properties of LC.

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Wednesday
LCTp3 - 4L

December 7
Phase Transition and Piezoelectric Effect of the
Ferroelectric Liquid Crystal
Y. Liu, Y. Yang, G. Xu
Chinese Ac. of Sci., China

The characteristic of phase transition and structure of the ferroelectricliquid crystal material were investigated. The relation between thetemperature and the piezoelectric constant of ferroelectric liquid crystal
was designed on the basis of the test theory to test the piezoelectric
constant. The relation between ε and f was also studied.
LCTp3 - 5L

Novel Ag Alloy for a Reflector of Transflective LCD
H. N. Yum, J. S. Kim, J. H. Kim, S. H. Cho
Samsung Elect., Korea

We demonstrated the application of Ag-Mo alloy to a reflector of atransflective LCD. Pure Ag had been considered as promising material
to replace a conventional material, Al-alloy. Due to discoloration andreflectance degradation, however, Ag could not have been widely used.
In this paper, it is presented that Ag-Mo alloy shows higher reflectancethan that of Al-alloy, and the optimized TFT fabrication process enables
one to overcome the limitations of Ag in real process.
LCTp3 - 6L

Molecular Dynamics in a Series of Halogen
Compounds Exhibiting Smectic B Phases
A. C. Ribeiro*,**, L. Gon a lves*,***, P. J. Sebastião*,**,L. Oswald****, D. Guillon*****Centro de Física da Matéria Condensada, Portugal**Instituto Superior Té cni Departamento de Física,
Portugal***Faculdade de Ciências e Tecnologia, Portugal****IPCMS, France

The molecular dynamics in a series of halogen liquid crystals exhibiting
smectic B phases is presented. Standard and fast field cycling NMR
techniques were used to obtain the proton spin-lattice relaxation
dispersion over a broad frequency range. The results are analyzed is
terms of potential contributions of different molecular motions. At highfrequency the relaxation is dominated by rotations/reorientations whiletranslational self-diffusion is dominant at low frequencies. The results
clearly reflect the influence of the terminal halogen element’s atomic
weight.

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Wednesday

December 7

15:00 - 17:00

Exhibition Hall

Poster LCTp4: Optical Design and Measurement
LCTp4 - 1

Optical Design of Tunable Liquid Crystal Color Filter
Y. Sato*, T. Ishinabe**, T. Uchida**, H. Seki*,****Hachinohe Inst. of Tech., Japan**Tohoku Univ., Japan***Aomori Pref. CREATE, JapanThe wavelength tunable liquid crystal color filter is developed for theimage analysis. The control of the transmitted spectrum is realized byintroducing the new design concept. It is clarified that the compensationof the dispersion property in liquid crystal is possible by usual
retardation film.
LCTp4 - 2

Improvement in Viewing Angle Properties of IPSLCDs Using a Negative A-Plate
S. Suzuki, N. Obara*, Y. Iimura
Tokyo Univ. of A&T, Japan*Tosoh, JapanFor reducing an intrinsic light leakage occurring in crossed polarizers at
oblique incident angles, we have studied the optical compensation forcrossed polarizers using a negative A-plate. Computer simulations tell us
that, comparing with the case for a positive A-plate, the use of anegative A-plate is more effective to reduce the light leakage, which isalso confirmed by the experimental results. A negative A-plate is also
applied to improve a dark state of an IPS-LCD, and the effectiveness ofthe film on the optical compensation is clarified.
LCTp4 - 3

Effects of Various Parameters of Discotic
Compensation Films on Viewing Angle Properties in
OCB-LCDI. Fukuda, T. Nakata, Y. Sakurai, Y. Sakamoto
Kanazawa Inst. of Tech., Japan

We investigated the effects of various parameters of discoticcompensation films on viewing-angle properties in an OCB-LCD. We
verified that wide viewing angles greater than ±80°
(CR>50) could beobtained by optimizing the retardation and refractive indices of the
discotic-compensation film, as long as the film’s molecular alignment
normalized at the thickness and that of liquid crystal layer in the blackstate are almost the mirror symmetry.

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Wednesday
LCTp4 - 4

December 7Order Parameters of Liquid Crystals on Dual Easy
Axes Substrate
C.-Y. Huang, Y.-S. Huang, J.-R. Tian
Nat. Changhua Univ. of Education, Taiwan

This work reports the measurement of the effective order parameter ofliquid crystals on the dual easy axes substrate. The effective orderparameter of liquid crystals is determined from the polarized ultraviolet
absorption of host-guest liquid crystals in a wedge cell. Experimental
findings indicate that the ratio of the rubbing strengths in the two
rubbing directions and the cell thickness substantially affect the effective
order parameter of the liquid crystal molecules. The energetic
competition between the surface anchoring in the two rubbing directions
contributes to the observed results.
LCTp4 - 5

Measurement of Surface Order Parameter of Liquid
Crystal Cell Using Phase Transition Droplet Method
S.-J. Oh, E. Kisara, K. Kuboki, T. Miyashita, T. Uchida
Tohoku Univ., JapanThe surface order parameter can be measured by observing the contact
angle between an isotropic phase or nematic phase droplet and thepolymer substrate at the nematic-isotropic phase transition temperature.
We discuss the relationship between the surface order parameter andthe droplet contact angle measuring the three-dimensional orderparameter using infrared light absorbance and measuring thebirefringence of the liquid crystal on the polymer surface. Based on the
result, we established a new model of the droplet contact angle.
LCTp4 - 6

Theoretical Approaches for Measurement of Three
Viscosities of N-Type Liquid Crystals
Y. Kuratomi, T. Miyashita, T. Kishimoto*, T. Ishinabe,
T. Uchida
Tohoku Univ., Japan*Aomori Pref. CREATE, Japan

We proposed a method for measuring three viscosities γ1, η1 and η2 ofp-type nematic liquid crystals using dynamic retardation properties of
ECB cells and tried to apply this method to n-type nematic liquid
crystals. However, we found that a twist alignment appeared at thevoltage-on state in VA cells, which became a severe problem for theviscosity measurement. In this paper, we propose a solution thatinvolves applying initial bias voltage to the VA cells from theoreticalanalysis.

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Wednesday
LCTp4 - 7

December 7
Raman Spectral Study of Polymer Alignment
Behaviors with Molecular Switching of Ferroelectric
Liquid Crystal
T. Murashige, H. Fujikake, H. Sato, H. Kikuchi, T. Kurita
NHK, Japan

We clarified that molecular alignment of polymers dispersed inferroelectric liquid crystal (FLC) moved under switching behaviors of the
FLC using polarization Raman spectral microscopy. The polymeralignment change became large with the increase in the FLC switchingangle. Polymer de-formations with the alignment change is thought to be
useful for improving the switching angle and a threshold voltage of the
FLC although the FLC switching behavior is suppressed by the polymer.
LCTp4 - 8L

New Method for Determination of Liquid Crystal
Polar Anchoring Energy from Reflective
Measurement
A. Murauski, V. Chigrinov
HKUST, Hong Kong

Liquid crystal (LC) polar anchoring energy was measured directly bydetermination of LC pretilt angle on the alignment surface analyzing thelight reflected from the test cell. The LC cells with the cell gap less than
5 μm with homogeneous and twist configuration were used inmeasurements.
LCTp4 - 9L

Practical Pretilt Angle and Gap Measurement Method
for Vertically Aligned Cells
T. Nishioka, T. Satake, T. Kurata, Y. Maeda*, M. Kaneko*,T. Maehara*
Mitsubishi Elec., Japan*Meiryo Technica, Japan

We have developed a practical pretilt angle and gap measurement
method for vertically aligned cells based on the crystal rotation method
using a polarization microscope. The errors due to measurement point
shift and undesired alignment near a protrusion can be avoided.
Moreover, transmittance anisotropy in oblique incidence is compensatedwithout refractive indices of substrate layers.
LCTp4 - 10L

High Sensitivity Pretilt Angle Measurement ofReflective Nematic Liquid Crystal Cells
S. J. Hwang, M. H. Hsu, H. H. Yu*, J. H. Lin
Nat. United Univ., Taiwan*Nat. Formosa Univ., Taiwan

A simple method for determining surface tilt angle of reflective liquid
crystal (RLC) displays was proposed based on the common-path
heterodyne interferometer and the modified crystal rotation configuration.
The phase retardation -extremum technique was used to measure thepretilt angle for the planar LC cell.

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Wednesday
LCTp4 - 11L

December 7
Liquid Crystal Analysis System (LCAS) -Complete
LC Measurement in under One MinuteM. Wand, A. Januszko*, P. Kaszynski*
LC Vision, USA*Vanderbilt Univ., USA

LCDs for computer and television applications have shown a dramaticincrease in demand in the last few years. Testing of commercial nematicLCs in an LCD production line, as well as design of new LCs for
improved displays is critical for fast development. A Powerful and yet
simple to use instrument, the LCAS-2, has been developed for the quick
and accurate measurement of almost all electrical and optical LC
properties in under one minute, and will be described in detail.

15:00 - 17:00

Exhibition Hall

Poster LCTp5: Novel Devices
LCTp5 - 1

Withdrawn

LCTp5 - 2

Transflective Spatial Filter Based on Azo-Dye-Doped
Cholesteric Liquid Crystal Films
T.-H. Lin, Y.-G. Fuh
Nat. Cheng Kung Univ., Taiwan

This work demonstrates the feasibility of exploiting the photoisomerization effect in azo-dye-doped cholesteric liquid crystal films(DDCLC) with a concomitant decline of the phase transition temperaturefrom the cholesteric to an isotropic phase (TCh-I) as a spatial filter. Highand low-pass images in the Fourier optical signal process can be
simultaneously observed via reflected and transmitted signals,
respectively.
LCTp5 - 3

Holographic Imaging Device Having Polarization
Selectivity Using Polymer Dispersed Liquid Crystal
A. Ogiwara, K. Kameda
Takamatsu Nat. College of Tech., Japan

Holographic imaging device having the dominant polarization
dependence has developed using a spatial light modulator (SLM) basedon H-PDLC technique. The output image from the SLM is recorded in
the device based on the alignment of liquid crystal molecules withinternal grating structures. The device can offer the rigorous treatment ofimage information in security applications.
LCTp5 - 4L

Optical Switch Based on Nematic Liquid Crystals
A. Muravsky, V. Chigrinov
Hong Kong Univ. of Sci. & Tech., Hong Kong

The switching possibilities of nematic liquid crystal mixtures were
investigated. The bypass optical switcher based on two nematic liquid
crystal cells with a switching time less than 0.2ms was demonstrated.

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Wednesday

December 7

Supporting Organizations:LC Physics and Condensed Matter Forum, JLCS
Chemistry and LC Material Forum, JLCS
Liquid Crystal Display Forum, JLCSLC Photonics and Optical Device Forum, JLCSSoft Matter Forum, JLCS
Molecular-Alignment Electronics Forum, JLCSTechnical Group on Information Display, ITE
Technical Committee on Electronic Information Displays, Electronics
Society, IEICE
Technical Committee on Electron Devices, Electronics Society, IEICE

IDRC
Sept. 18 – 21, 2006
Kent State University
OH, U.S.A.

Outstanding
Poster Paper Awards
Friday, December 9
12:20 – 13:30(after Takamatsu Festival)
Tamamo (3F),
ANA Hotel Clement Takamatsu
See page 8 for details

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Tuesday

December 6

Workshop on Active Matrix Displays
Tuesday, December 6
13:30 - 14:45

Sunport Hall Takamatsu Main Hall

AMD1: LC-TV
Chair：
Co-Chair：J. Jang, Kyung Hee Univ., Korea
M. Tsumura, Future Vision, Japan

AMD1 - 1:
13:30

Invited Technology Trend for High Quality Display
Image of LC-TV
Y. Yamada, N. Kimura, Y. Ishii
Sharp, Japan

Recently, replacement from CRTs to FPDs has occurred rapidly,
because of permeation of the digital broadcasting. Among FPDs，LCDs
are most promising display device to satisfy the image quality for
television. In this paper technologies for improving image quality such as
response time, viewing angle and contrast ratio are presented.
AMD1 - 2:
13:55

Invited Nano Science of AFFS Technology for
Ubiquitous Personal Devices and LCD-TVs
K. H. Lee, I. C. Park, K. H. Park, S. J. Jang, S. K. Lee,Y. J. Lim
BOE HYDIS Tech., Korea

Since the fringe field switching (FFS) technology was proposed in 1996,
in recent, the AFFS have become the best leading technology over 70%
shares in tablet PC region. AFFS have shown the competitive features
such as a high transmittance ratio over 95%~130% to TN, a powersaving of 30% to TN mode, a high contrast ratio over 700 ~ 1000:1, an
ultra low reflectance under 0.5% in outdoor, a free of color shift under
0.02 （△RGBWxy) in the single domain and an unlimited viewing angle， respectively.
over 180°／180°
AMD1 - 3:
14:20

InvitedSpectrum Sequential LC-TV

M. J. J. Jak, J. J. L. Hoppenbrouwers, F. J. Vossen,
O. Belik, G. J. Hekstra
Philips Res. Labs., The Netherlands

We have built a “Spectrum Sequential” LCD. It is equipped with abacklight with two types of fluorescent lamps with different phosphor
coatings that alternately illuminate a regular LCD panel with RGB colour
filters. In this way a display with 6 primary colours is obtained, having awider colour gamut than the conventional panel. Since high brightness
desaturated colours, such as white, can be made in both frames, colour
break-up can be avoided.

----- Break -----

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Tuesday

December 6

15:00 - 16:10

Sunport Hall Takamatsu Main Hall

AMD2: Large Area Display Applications
Chair：
Co-Chair：M. J. J. Jak, Philips Res. Labs., The Netherlands
T. Sunata, Philips Mobile Display Syss., Japan

AMD2 - 1:
15:00

Invited Widegamut LCD Monitor Using LED
Backlight
H. Kaneko, S. Kagawa, J. Someya, H. Tanizoe, H. Sugiura
Mitsubishi Elec., Japan

Authors have successfully developed wide color gamut liquid crystal
display using LED backlight. We have tried some approaches forbacklight system, in each case, we achieved a high performance.
AMD2 - 2:
15:25

InvitedMedical Display Outlook

F. Hayashiguchi
Int. Display Tech., JapanThe TFT-LCD becomes more Medical Doctor’s choice for Medical
Imaging Applications compare to the legacy imaging devices.
International Display Technology Co., Ltd. made a long-term progress inthe past several years by providing multiple display products.The special
requirements for the medical imaging displays and its solutions orremained problems based on current technology state will be covered.
AMD2 - 3
15:50

A-Si TFT Off-Current Analysis for Flat-Panel X-Ray
Detector
A. Kinno, M. Ikeda, M. Atsuta, S. Uchikoga
Toshiba, JapanThe characteristics of the TFT array for the flat-panel x-ray image
detector have been improved by studying the uniformity and thetemporal variation of the TFT off-current. The top gate structure was
examined and found to be more effective than the bottom gate structure
for evaluating the Vth shift due to charged impurities in the array fromelectrostatic analysis and the top gate TFT evaluation. By using the top
gate structure evaluation we have improved the uniformity and thetemporal variation of the TFT characteristics and realized excellent
quality x-ray detector image.

----- Break -----

16:40 - 18:10

Sunport Hall Takamatsu Main Hall

AMD3: Emerging TFT Technologies
Chair：
Co-Chair：40

Y. Yamada, Sharp, Japan
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Tuesday
AMD3 - 1:
16:40

December 6
Invited High Performance FET Using Transparent
Amorphous Oxide Semiconductor as Channel Layer
on Plastic Substrate
H. Hosono*,**, K. Nomura**, T. Kamiya*,***Tokyo Inst. of Tech., Japan**ERATO-SORST, JST, Japan

We report the room temperature fabrication of transparent and flexible
thin film transistors (TFTs) using an amorphous oxide semiconductor(AOS) in an In2O3-ZnO-Ga2O3 system on a polyethylene terephthalate
thin film substrate. These transistors exhibit a field effect mobility of ~10
cm2(Vs)-1, which is higher by an order of magnitude than that ofamorphous Si:H and pentacene, and a high chemical stability in an
ambient atmosphere.
AMD3 - 2:
17:05

InvitedTFT Arrays for Biosensing Applications

P. Estrela, A. G. Stewart, S. D. Keighley, F. Yan,
P. Migliorato
Univ. of Cambridge, UK

Biotechnology is in great need of low-cost intelligent biochips formassive parallel detection of biomolecular interactions, using portable
instrumentation. One way this may be achieved is to exploit mature
semiconductor technologies for the development of biosensor arrays.
New detection mechanisms have been developed using field effectdevices such as MOS capacitors and TFTs. Examples will be given on
the application of such devices for the detection of pH, enzymatic
reactions, DNA hybridization and protein interactions.
AMD3 - 3
17:30

Flexible Carbon Nanotube Thin-Film Transistors
J. P. Novak, R. L. Fink, Z. Yaniv
Appl. Nanotech, USA

We describe the use of a carbon nanotube thin-film transistor (CNTTFT) on flexible substrates to operate an LCD pixel. CNT-TFTs wereconstructed on polyimide as a random network conductive film. This film
electronically behaves as a p-type semiconducting film with superior
performance when compared to other low-temperature semiconducting
materials used on plastic substrates. The CNT-TFTs are used to switch
on and off a LCD pixel and modulate an LED.
AMD3 - 4
17:50

Artificial Retina Using Thin-Film Photodiodes andThin-Film Transistors
M. Kimura, T. Shima, T. Okuyama*, S. Utsunomiya*,
W. Miyazawa*, S. Inoue*, T. Shimoda*
Ryukoku Univ., Japan*Seiko Epson, JapanAn artificial retina using thin-film photodiodes and thin-film transistors(TFTs) is proposed, which is expected to be suitable for living bodies
and to be low emission and low cost. The characteristics of a thin-film
photodiode and TFTs are evaluated. A retina circuit is shown andsimulated with a photodiode and TFT model to verify that it can work.
The edge enhancement is also confirmed.

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Tue./Wed.

December 6/7

Author Interviews
18:20 - 19:20

Wednesday, December 7
9:00 - 10:25

Sunport Hall Takamatsu Main Hall

EP4/AMD4: Active Matrix Electronic Paper
Chair：
Co-Chair：T. Asano, Kyushu Inst. of Tech., Japan
H. Kawai, Seiko Epson, Japan

EP4/AMD4 - 1: Invited Rollable Active-Matrix Electronic-Paper
9:00
Displays
H. E. A. Huitema, G. H. Gelinck, E. van Veenendaal,
P. J. G. van Lieshout, F. J. Touwslager
Philips Tech. Incubator, The Netherlands
A 100μm thick QVGA active-matrix display integrated into a functional
device prototype is presented. The active-matrix is composed ofalternating layers of organic materials and gold. A 6-mask
photolithographic process is used. An electrophoretic electronic imaging
film is laminated on top of the active matrix. The display is bendable to aradius of 7.5mm for more than 30.000 times.
EP4/AMD4 - 2: Invited Rapid Switching in Multiple Color Active
9:25
Matrix Driven Electrowetting Displays
B. J. Feenstra, R. A. Hayes, R. van Dijk, R. G. Boom,
M. M. H. Wagemans, I. G. J. Camps, A. Giraldo,
B. van der Heijden
Philips Res. Labs., The Netherlands
We present the attractive properties of our active matrix driven
electrowetting displays. For the first time, we show all ingredientsrequired for realizing video-speed, full-color displays. Two colorarchitectures are presented: a single-layer display that has an improved
optical and power performance at a lower projected cost compared to
LCDs and a triple-layer display that has a revolutionary optical
performance. We demonstrate the fast switching of the electrowetting
technology by showing video content on a 170 ppi resolution display.

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Wednesday

December 7

EP4/AMD4 - 3
9:50

Manufacturing Flexible High Information Content
Active Matrix Displays
S. E. Burns, K. Reynolds, W. Reeves, I. P. Johnson,
B. H. Pui, M. Banach, T. Brown, K. Chalmers, N. Cousins,
P. Cain, M. Etchells, C. Hayton, K. Jacobs, S. Markham,
S. Orchard, A. Menon, P. Too, S. Siddique, C. Ramsdale,
J. Herod, K. Saynor, J. Watts, T. von Werne, J. Mills,
C. J. Curling, H. Sirringhaus, K. Amundson*,
M. D. McCreary*
Plastic Logic, UK*E Ink, USA

We present a manufacturing process for flexible high information content
active matrix backplanes compatible with low cost plastic substrates.
Transistor performance, feature sizes and electrode conductivities of thisprocess have been specified to enable 800x600 pixel displays at 100
pixels per inch (PPI), driving grey scale electrophoretic media. Here we
report on early results showing this displays operation. This process has
been developed on a 350mmx350mm Prototype Line. It is scalable tolarger display sizes and higher PPI, and will enable a wide range of
flexible display products.
EP4/AMD4 - 4L 100-μm-Thick, High-Resolution Rollable AM-EPD
10:10
T. Kodaira, S. Hirabayashi, Y. Komatsu, S. Utsunomiya,
M. Miyasaka, H. Kawai, S. Nebashi, S. Inoue, T. Shimoda,
T. Whitesides*, S. Patry*, M. McCreary*
Seiko Epson, Japan*E Ink, USA
We have developed a paper-thin 100-μm-thick, high-resolution (192 ppi,)
2.1-inch QVGA flexible active-matrix electrophoretic display (AM-EPD).
The TFT backplane with integrated peripheral driver circuits was first
fabricated on a glass substrate and then transferred to a very thin (30μm) plastic film by employing Surface Free Technology by Laser
Ablation / Annealing (SUFTLA ). An imaging sheet provided by E Ink
Corporation was laminated on the backplane. Fine images weresuccessfully displayed on the rollable AM-EPD.

----- Break -----

10:40 - 12:05

Sunport Hall Takamatsu Main Hall

OLED4/AMD5: Active Matrix OLED
Chair：
Co-Chair：B. J. Feenstra, Philips Res. Labs., The Netherlands
R. Hattori, Kyushu Univ., Japan43

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Wednesday

December 7

OLED4/AMD5 - 1: Invited Development of Full Color Double Sided
10:40
Active Matrix OLED
C.-W. Ko, S.-H. Hu, S.-H. Li, T.-H. Hsiao, K.-S. Lee,
C.-J. Chen, J.-H. Chen, J.-J. Lih
AU Optronics, Taiwan
A 1.5-inch full color double sided AMOLED has been developed. The
typical sub-pixel area is divided into two regions, which are designed for
top-emission and bottom-emission structures. With the novel array
design, independent images on both sides of the panel can becontrolled by only one IC driver. Superior performance of the double
sided AMOLED such as high color saturation and good power efficiency
were achieved. Very thin form factor and light weight with capability ofshowing two independent images on both sides make the double sided
AMOLED an excellent candidate for cell phone application.
OLED4/AMD5 - 2
11:05

7-in. WVGA AM-OLED Display with Color Filter on
Array (COA) and Pixel Compensation Technology
D.-Z. Peng, C.-H. Tseng, S.-C. Chang, P.-H. Yeh,
H.-L. Hsu, Y.-M. Tsai
Toppoly OptoElect. Taiwan, Taiwan

We have developed a 7-inch WVGA full-color AM-OLED display withtechnology of color filter on array (COA) and pixel compensation circuit.
To prevent precision mask misalignment issues, high efficiency white
OLED with COA was applied for higher resolution. In addition, a pixel
circuit which compensates both the TFT variations as well as EL power
voltage drop was proposed to improve the uniformity on the panel. With
these technologies, a large-size and high-resolution OLED display could
be achieved.
OLED4/AMD5 - 3
11:25

Novel Voltage-Sensing and Voltage-Programming
Method for Large-Size and High-Resolution AMOLED Panels
H.-J. In, P.-S. Kwag, J.-S. Kang, O.-K. Kwon, H.-K. Chung*Hanyang Univ, Korea*Samsung SDI, Korea

A novel voltage-sensing and voltage-programming method is proposed
for large-size and high-resolution AMOLED panels. The proposed
method successfully compensates the threshold voltage and mobility
variations of poly-Si TFTs throughout a large-size panel and overcomesthe problem of charging a data line. The HSPICE simulation results
show that the maximum emission current error for 30-inch full HDTV
applications is less than 1.86%, when the mobility variation and thethreshold voltage variation are +12.5% and +0.3V, respectively.

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Wednesday

December 7

OLED4/AMD5 - 4
11:45

New Current Compensation Theory in AM-OLED
Pixel Circuit by Employing Voltage-Scaled
Programming Method
W.-J. Nam, J.-H. Lee, S.-M. Han, H.-J. Lee, M.-K. Han
Seoul Nat. Univ., Korea

For the first time, we propose a new voltage-scaled programming pixel
circuit of AMOLED displays. Data voltages are scaled-down by thecapacitive-coupling of off-transition of the scan signal. The proposed
scheme of data voltage modulation contributes to scale down the VTH
variation of the poly-Si TFT. The input range of data voltages is scaled
up and the data addressing errors due to the clock feed-through of thescan signal are also reduced. Finally, IOLED is compensated and theuniform current is successfully controlled.

----- Lunch -----

13:40 - 15:00

Sunport Hall Takamatsu Main Hall

AMD6: Mobile Displays
Chair：
Co-Chair：

H. E. A. Huitema, Philips Res. Labs., The Netherlands
Y. Yamamoto, Sharp, Japan

AMD6 - 1:
13:40

Invited Challenges to AM-OLED Technology for
Mobile Display
H. D. Kim, K. J. Yoo, M.H. Kim, S. T. Lee, H. K. Chung
Samsung SDI, Korea

To meet the future trend of mobile display, we have developed
successfully the world’s highest resolution 302ppi 2.65inch full color
VGA AMOLED and a system on panel 2inch QVGA AMOLED using
several new technologies such as, short channel TFT, laser induced
thermal imaging (LITI) color patterning and blue common layer
technique which can reduce a patterning step. We have also developed
a new micro cavity effect control technique by modulating the thicknessof the hole-injection layer.
AMD6 - 2
14:05

Circuit Techniques for Reduction of Number ofConnections to a-Si AM-LCD
S. C. Deane, M. Cassidy, P. Collins, K. Yamashita*,
T. Inada*, S. Kawata*, M. Yoshiga*, Y. Onda*, J. R. Hector,
M. Inoue*
Philips Res. Labs., UK*Philips Mobile Display Syss., Japan

We have made 1.8” QVGA (222dpi) transflective a-Si AMLCDs with an
integrated gate driver and column multiplexers. First, we discus a gate
driver design which minimizes the connection count to the external
electronics to the minimum level. To further reduce the interconnect
count, we have also integrated column multiplexers. This not only
reduces the interconnection count radically, and driver IC cost, but it
also can enable smaller pitch displays in a-Si technology due to reduced
interconnection pitch.
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Wednesday
AMD6 - 3
14:25

December 7
A-Si Gate Driver Designs for Low Power AM-LCD
Operation
K. Yamashita, T. Inada, M. Cassidy*, S. C. Deane*,P. Collins*, S. Kawata, Y. Onda, M. Yoshiga, J. R. Hector*,
M. Inoue
Philips Mobile Display Syss., Japan*Philips Res. Labs., UK

We have made 1.8” QVGA (222dpi) transflective a-Si AMLCDs withintegrated gate drivers. One is optimized for a very low power normal
operating mode. The other can switch to an arbitrary partial scan mode.
Gate driver integration results in narrow, symmetric margins, reduced
cost and interconnections. In another paper we explore minimizing thenumber of connections to the display, while here we allow a small
increase in the number of connection lines to allow very significant
power reduction.
AMD6 - 4L
14:45

Development of a Novel Double-Sided LCD with aSingle Panel and One Lighting System for Mobile
Applications
S. Kang, Y. K. Cho, H. Y. Hong, H. H. Hwang, H. H. Choi*,
B. C. Hwang*, J. S. Park*, T. Maekawa**
Image Lab, Korea*LG Innotek, Korea**Fujitsu Kasei, Japan

Using only a pair of LC panel and lighting system, we have developed anovel LCD system called “Double-Sided LCD”. In spite of this simple
composition it can work not only as a reflective-type display from thefront side but also as a transmissive-type display from the rear side.
Compared to the conventional dual-sided LCDs with two different LC
panels and one or two lighting systems, its thickness and cost can be
reduced drastically up to 1/2.
Author Interviews
17:30 - 18:30

IDW '06
International Display Workshops
Dec. 6 – 8, 2006
Convention Hall Ohmi, Otsu Prince HotelOtsu, Japan
http://idw.ee.uec.ac.jp
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Wednesday

December 7

15:00 - 17:00

Exhibition Hall

Poster OLEDp/AMDp: Active Matrix OLED
OLEDp/AMDp - 1

Novel Sub-Intra Gate Poly-Si TFT Structure for AMOLED Pixel Drivers
C. J. Shih, C. H. Fang, D. H. Deng, P. C. Liu, C. P. Kuan,
C. C. Lu
Chunghwa Picture Tubes, Taiwan

The novel poly-Si thin film transistors based on sub-gate, intra-gate, andasymmetric dual-gate structures are developed to satisfy the strict
requirements of AMOLED pixel drivers. Our experimental results showthat the proposed design can optimize the performance of dual gate
structures by suppressing kink current and light-induced leakage
current, while the aperture ratio and field effect mobility are also
improved remarkably.
OLEDp/AMDp - 2

7-in. WQVGA p-Si LTPS AM-OLED with Novel Driving
Architecture
I.-C. Shih, M.-T. Hsu
Chunghwa Picture Tubes, Taiwan

This paper presents a novel driving architecture for AMOLED that
adopts the commercialized TFT-LCD driver IC. By utilizing fully p-Si
LTPS process, this architecture has been successfully implementationon the 7-inch AMOLED display.
OLEDp/AMDp - 3

New Pixel Circuits for Driving Organic Light Emitting
Diodes with Low Temperature Polycrystalline Si Thin
Film Transistors
Y. H. Tai, B. T. Chen, Y. J. Kuo, Y. J. Wei, C. C. Tsai,K. Y. Chiang, H. C. Cheng
Nat. Chiao Tung Univ., Taiwan

Two new pixel circuits for active matrix organic light emitting diode (AMOLED), based on the low-temperature polycrystalline Si thin-film
transistors (LTPS-TFTs) are proposed and the Vth compensation ability
is verified by SPICE simulation and measured results. The voltageprogramming pixel circuits are formed by five TFTs, one additional
control signal, and one storage capacitor. The simulation and measured
results show that the pixel circuit has high immunity to the variation ofpoly-Si TFT characteristics.

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Wednesday

December 7

OLEDp/AMDp - 4

Non-Contact Method for Analysis of Pixel Circuits in
Active Matrix OLED Using External Probes with
Electrical Pulses and Photo-Multiplier Tube Detector
P. L. Huang, S. J. Tang
Chunghwa Picture Tubes, Taiwan

We presented an effective non contact way to probe TFTs and capacitor
on pixels, which was used to control on/off of switches and data storage
to light on AMOLED devices. The detecting system was a combinationof external electrical pulses on panel leads and a photomultiplier tube
(PMT) detector. The OLED emitting signal had been the clue tounderstand of the behaviors of pixel circuits by modifying the electricalsignal, and performance of OLED had been successfully improved.
OLEDp/AMDp - 5

New Pixel Driving Scheme Based a-Si:H TFTs by
Eliminating Switching TFTs in OLED Current Path for
Low Power Consumption
H.-S. Shin, J.-H. Lee, K.-S. Shin, M.-K. Han
Seoul Nat. Univ., Korea

We propose a new pixel design for active matrix organic light emitting
diode (AM-OLED) displays using hydrogenated amorphous silicon thinfilm transistors (a-Si:H TFTs). The proposed circuit is employed by a
new scheme of threshold voltage compensation. As VDD supply lines are
utilized clock signal, the threshold voltage of the driving TFTs ismemorized during the VDD clock signal off. The proposed circuit needs
only one driving TFT located in the OLED current path without any
additional switching TFT for VTH compensation, resulting in lower power
consumption than the conventional pixel circuits.
OLEDp/AMDp - 6

Adaptive Current Scaling Pixel Circuit for a-Si:H AMOLED Displays
J. Z. Huang, J. A. Cheng, Y. C. Lin, W. Cheng,
H.-P. D. ShiehNat. Chiao Tung Univ., Taiwan

An adaptive current scaling pixel circuit for a-Si: H TFT process has
been demonstrated. The adaptive current scaling is achieved byinserting a small cascaded storage capacitor to the traditional pixel
circuit without affecting the aperture ratio. The proposed pixel circuit iscapable of shorting the programming time without sacrificing the power
consumption. Hence, the proposed pixel circuit is suitable for the large
size and high resolution AMOLED application.
OLEDp/AMDp - 7L High Contrast Top Emission Active Matrix RGB
OLED
R. Wood, R. Cheuk, WY. Kim
Luxell Technologies, CanadaThis work centers on the design of a high contrast AM top emission
OLED. The device is built on an AM backplane, with discreet RGB color
pixels, and a semi-transparent cathode. The structure utilizes the cavity
effects for enhanced emission while simultaneously incorporating a
tuned cathode for destructive optical interference.

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Wed./Thu.

December 7/8

OLEDp/AMDp - 8L 3-TFT Pixel Circuit Employing a Fraction TimeAnnealing to Improve a Current Stability of a-Si:H
TFT AMOLED
J. H. Lee, W. J. Nam, H. S. Shin, M. K. Han
Seoul Nat. Univ., Korea
We have proposed and fabricated 3-TFT pixel circuit employing afraction time annealing to improve a current stability for a-Si:H TFT
based AMOLED backplane. The measurement results, after an electricalbias and temperature (60℃) stress of 12 hours, show that OLED current
is decreased by 23% in conventional 2-TFT pixel, while decreased by
6% in the proposed 3-TFT pixel because a negative bias can reduce
VTH degradation of a-Si:H TFT itself.
OLEDp/AMDp - 9L New Voltage Programmed AMOLED Pixel Circuit
Using Reference Current
M. H. Jung, I. H. Choi, O. H. Kim, T. Y. Kim*, Y. W. Shin*,
H. J. Chung*
POSTECH, Korea*Kumoh Nat. Institue of Tech., Korea
A new pixel structure composed of six TFTs and one capacitor adopting
low temperature polysilicon (LTPS) is proposed. It can compensate boththe TFT threshold voltage variation and the supply voltage drop on
operation. Simulation of the proposed circuit is carried out with SMART
SPICE of RPI poly-Si TFT model.

Thursday, December 8
9:00 - 10:30

Sunport Hall Takamatsu Main Hall

AMD7: TFT Technologies - Crystallization
Chair：
Co-Chair：H. Hosono, Tokyo Inst. of Tech., Japan
M. Kimura, Ryukoku Univ., Japan

AMD7 - 1:
9:00

Invited System on Glass Display Fabrication Using
LTPS-TFT Formed by SELAX (Selectively Enlarging
Laser X’tallization) Technology
M. Hatano, T. Sato, M. Matsumura, Y. Toyoda, M. Tai,
M. Ohkura*, T. Miyazawa*
Hitachi, Japan*Hitachi Displays, JapanSELAX technology can form TFTs with high mobility, low sub-thresholdswing and small threshold voltage deviation that they can be used tointegrate high performance circuits and valuable functions on glass
substrates. By using hybrid laser crystallization technology:SELAX are
applied to low-power, high-speed circuits, and conventional ELC areused for the high-voltage circuits, the process tact time can be reduced.
Narrow frame size IPS-mode LCD panels with resolution of over 300 ppi
have been developed utilizing SELAX based technologies.

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ThursdayAMD7 - 2:
9:25

December 8
Invited Single-Crystalline Silicon TFTs Fabricatedwith Comb-Shaped Beam in ZMR-ELA
M. Nakata*,**, H. Okumura*,**, H. Kanoh*,**, H. Hayama*,
S. Kaneko*,***NEC, Japan**NEC LCD Tech., Japan

We have developed nucleation control methods applicable to a zonemelting recrystallization excimer laser annealing process for poly-Si
films. Ribbon-shaped Si grains of 2 μm-width were successfully aligned
side by side by means of a comb-shaped beam, and we havesuccessfully fabricated single-crystalline silicon TFTs with channels
formed in those grains. Electron mobility in the TFTs is as high as 677cm2/Vs.
AMD7 - 3
9:50

Novel Selected Area Laser Assisted (SALA) System
for Crystallization and Doping Processes in LowTemperature Poly-Si Thin-Film Transistors
R. Ishihara, A. Glazer*, Y. Raab*, P. Russian*, M. Dorfan*,B. Lavi*, I. Leizerson*, A. Kishnevsky*, Y. van Aandel,
X. Cao, J. W. Metselaar, C. I. M. Beenakker,
S. Stolyarova**, Y. Nemirovsky**
Delft Univ. of Tech., The Netherlands*Orbotech, Israel**Technion-Israel Inst. of Tech., Israel

CMOS poly-Si TFTs were fabricated through crystallization and GILD
processes by a novel selected area laser assisted (SALA) system. The
system enables a local area irradiation of small beams of a pulsed solidstate laser of frequency tripled Nd:YAG. The novel TFT process
eliminated 3 doping mask steps of the conventional process. On-off
current ratios for both types of poly-Si TFTs were improved by SALA.
The field effect mobility of n- and p-channel TFTs is 84 cm2/Vs and 75
cm2/Vs, respectively.
AMD7 - 4
10:10

High Field Effect Mobility Poly-Si TFTs Fabricated by
Advanced Lateral Crystal Growth Process Using
Double-Pulsed Laser Annealing System
S. Sakuragi, T. Kudo, K. Yamazaki, T. Asano*
Sumitomo Heavy Ind., Japan*Kyushu Inst. of Tech., JapanThe advanced lateral crystal growth (ALCG) process with the doublepulsed green laser annealing system enabled us to produce the highquality Si thin-films for the high-performance n-channel poly-Si TFTs (L/W: 5μm/5μm), characterized by the high field effect mobility of 650cm2/
Vs and the strong temperature dependence of the field effect mobility
close to single crystal TFTs.

----- Break -----

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ThursdayDecember 8

10:50 - 12:10

Sunport Hall Takamatsu Main Hall

AMD8: TFT Technologies - Modeling & Analysis
Chair：
Co-Chair：M. Hatano, Hitachi, JapanS. Horita, JAIST, Japan

AMD8 - 1:
10:50

Invited Molecular-Dynamics Simulation of Nucleation
and Growth of Crystalline Si Films During ELA
Process
T. Endo, T. Warabisako, S. Munetoh*, T. Motooka*
ALTEDEC, Japan*Kyushu Univ., Japan

Initial stage of the nucleation and growth of crystallizing Si in a rapid
cooling process like ELA is discussed by using molecular-dynamics
simulations. A new simulation technique is introduced to exclude artificial
temperature control and to realize pseudo-natural cooling conditions.
Based on a statistical analysis of the atomic movements, it is suggested
that Si nucleation and growth occur in an amorphous-like or a lowdensity liquid phase rather than the supercooled liquid as has been
generally accepted so far.
AMD8 - 2
11:15

Localized Resistance Across Grain Boundaries in
Poly-Si Layer of TFT Measured by Scanning
Spreading Resistance Microscopy
H. Yamagiwa, S. Abo, F. Wakaya, T. Sakamoto*,
H. Tokioka*, N. Nakagawa*, M. Takai
Osaka Univ., Japan*Mitsubishi Elec., Japan

Resistance distribution across grain boundaries in a low-temperaturepoly-Si layer of a thin film transistor with a lightly doped drain structure
was investigated using scanning spreading resistance microscopy. The
resistance around the grain boundaries was lower than that inside thegrains. Slightly higher resistance areas surrounded by low resistanceareas were observed at the center of the grain boundaries. The drastic
resistance change at the LDD region was measured.
AMD8 - 3
11:35

Process Simulation of Laser Crystallization andAnalysis of Crystallization Process of Si Films
M. Kimura, R. Saito, S. Tsukamoto, Y. Hiroshima*,
S. Inoue*, T. Shimoda*, R. Ishihara**
Ryukoku Univ., Japan*Seiko Epson, Japan**Delft Univ. of Tech., Japan

Process simulation of laser crystallization has been executed to analyze
crystallization process of Si films. It considers nucleation rate, crystal
growth velocity and partial crystallization model. It is found that thenucleation occurs in the supercooling, the emission of latent heat
prevents from other nucleation, and the whole Si film is at the same
temperature due to the high thermal conductance of Si. It is applied toevaluate μ-CZ, and its grain size is estimated to be 2.8 μm.

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ThursdayAMD8 - 4L
11:55

December 8
Advanced Phase-Modulators for Next-Generation
Low-Temperature Si Film Crystallization Method
Y. Taniguchi, T. Katou, M. Matsumura
Advanced LCD Tech. Dev. Ctr., JapanA phase-modulator having only ‘holes’ (or ‘bumps’) on a quartz plate
has been found to have insufficient depth-of-focus characteristics. This
poor depth-of-focus can be attributed to phase retardation effect. Basedon this, two bipolar phase-modulators were developed. The first has a
deep depth-of-focus and the second is a single-plate modulator that cangenerate a two-dimensional light intensity profile. It was confirmed
experimentally that the second modulator could grow arrays of large
grains with 5-μm pitch.

----- Lunch -----

13:40 - 15:00

Sunport Hall Takamatsu Main Hall

AMD9: TFT Technologies - Process Technologies
Chair：
Co-Chair：N. Matsuo, Univ. of Hyogo, Japan
S. Utsunomiya, Seiko Epson, Japan

AMD9 - 1
13:40

Process Evolution by Photolithographic Process
Techniques and Improvement of Conventional 4Mask Process Technologies
S. Kido*, M. Yamashita*, Y. Umihira*, K. Akagami*,
Y. Murayama
NEC LCD Tech., Japan*NEC Kagoshima, JapanIn TFT-LCD panel industry, the cost cut which is one of the subjects is
considered from various viewpoints. Then, two new photoresist mask reprocessing technology (redevelopment processing technology andchemical re-flow processing technology) was developed and put inpractical use as photolithography process reduction technology in TFT
board manufacture. So, in this report, these technology is introduced
and improvement of the conventional 4-mask technology and new 4mask technology are explained as the example of application.
AMD9 - 2
14:00

Effect of High-Quality CVD-SiO2 Interfacial Layer on
Reliability of Poly-Si TFT
H. Hamamura, M. Matsumura, T. Mine, K. Torii
Hitachi, JapanA new process named C-DOP (cyclic deposition with O2 plasma
treatment) was developed to obtain a high quality IL which can apply to
low temperature process of poly-Si TFT. This process is effective to
remove the residual impurities and making Si-O-Si network dense. By
using the C-DOP formed IL, the flat band voltage shift (∆Vfb) due to FN
stress and drain current degradation due to DAHC stress weresuccessfully suppressed.

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ThursdayDecember 8

AMD9 - 3
14:20

High Performance/High Reliability Polycrystalline
Silicon Thin Film Transistors with Sputtered Si and
SiO2 Films
T. Serikawa, M. Miyashita*, Y. Uraoka*, T. Fuyuki*
Univ. of Tokyo, Japan*Nara Inst. of Sci. & Tech., Japan

Low-temperature poly-Si TFTs with channel length down to 1μm were
fabricated by using sputter-deposited Si and gate SiO2 films. Resulted nand p-channel poly-Si TFTs showed mobilities of 120 and 70 cm2/V·s.
“Punch-through” effects in short-channel TFTs were effectively
suppressed by thinning gate SiO2 films down to 9.5 nm. C-MOS TFT
circuits were also fabricated and high speed operations were confirmed.
Moreover, sputter-poly-Si TFTs showed reliability much higher thanCVD-poly-Si TFTs for DC and dynamic stresses.
AMD9 - 4
14:40

Formation Process and Properties of a-Si TFT Using
Selective and Dispersive Transfer Technique
Y. Onozuka, Y. Hara, T. Hioki, M. Tanaka, K. Miura, K. Sugi,
M. Akiyama, S. Uchikoga
Toshiba, JapanThe authors proposed a novel selective and dispersive transfer
technique for low-cost, large-area TFT array fabrication. An individual
TFT device having small size of several tens of microns and small
thickness of about a micron has been transferred to an adhesion layer
at high transfer yield of more than 99%. The reliability of the transferred
TFT on the adhesive island with respect to bias-temperature stress has
been confirmed to be almost the same as that of the reference TFT on
the glass substrate.
Author Interviews
17:30 - 18:30

15:00 - 17:00

Exhibition Hall

Poster AMDp: Active Matrix Displays
AMDp - 1

High-Speed Sequential Logic Circuitry Using LowTemperature Poly Silicon Technology for TFT-LCD
PanelK. Ishikawa, Y. Suzuki, N. Nakanishi, K. Matsunaga
Tokai Univ., Japan

In this paper, a high-speed sequential logic circuitry used LTPS
technology for TFT-LCD panel is proposed. The proposed new circuit is
dynamic/static shift register, counter and so on. The high-speed
sequential logic circuitry can operate at the high-operational frequency
by about 2~4 times than the conventional circuit due to applying thewider swing-voltage than the power-supply voltage by using the
Bootstrap Technology (BST). The new circuit is named the “BST-TFT
Logic Circuitry”.

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ThursdayAMDp - 2

December 8
Effects of Peripheral Region on C-V Characteristics
of Organic MIS Capacitors
K. D. Jung, S. H. Jin, C. A. Lee, C. B. Park, B. G. Park,
H. C. Shin, J. D. Lee
Seoul Nat. Univ., Korea

MIS capacitors were fabricated and analyzed using pentacene asorganic semiconductor. Special attention was given to the peripheral
pentacene region which might change C-V characteristics when thesubstrate is used as a gate electrode. It was found that peripheral
pentacene region of several tens of micrometers can make considerable
differences on measured C-V characteristics. Therefore, when evaluating
the characteristics of organic MIS capacitors, the effects of peripheral
pentacene region should be considered to obtain the accurate C-V
curve.
AMDp - 3

Effect of Short-Term Plasma Treatments on LTPSTFT Characteristics and Reliability
Y. P. Yang, D. H. Deng, M. C. Ho, F. Y. Lu, C. H. Fang,
C. C. Lu
Chunghwa Picture Tubes, Taiwan

In this study, we proposed a method to improve the electrical properties
and uniformity of LTPS TFTs. Before deposition of gate oxides, the polySi films were treated with various kinds of plasma. Device performanceand reliability of the LTPS TFTs have been investigated. Comparing withthe conventional device, components with N2O, H2 and NH3 plasma
treatment possessed better electrical characteristics and uniformity. And
the N2O plasma treatment revealed higher reliability than H2 and NH3
plasma treatment.
AMDp - 4

New High-Voltage Generator Using Low Temperature
Poly Silicon Technology for TFT-LCD Panel
N. Ishii, Y. Suzuki, N. Nakanishi, N. Sasaki
Tokai Univ., Japan

In this paper, a new high-voltage generator using the LTPS technology
for TFT-LCD panel is proposed. The power efficiency is about 86%
when the new generator obtains the +16V output voltage with +1mA
output current from the +2.5V single power supply voltage. The power
efficiency of the new generator is improved around 30% value than thatof the conventional generator.
AMDp - 5

Crystal Structural Study of Pentacene Film in OTFT
T. C. Tien, J. F. Wein, T. S. Hu, J. C. Ho, L. J. Lin, S. C. Lo,
H. C. Huang, S. M. Jeng
Industial Tech. Res. Inst., Taiwan

The studies on crystal structure of pentacene film on electrode (ITO)
and insulator (SiO2) in TFT shown the pentacene film on ITO would
contain more amorphous phase than SiO2, and both of them composedof crystalline phase on surface. Where pentacene is getting closer to thesurface, the pentacene/SiO2 have more thin film phase than the
pentacene/ITO. Gap and pore between pentacene/ITO interface were
found on the incline of electrode might be induced from poor adhesion
and thermo stress.
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ThursdayAMDp - 6

December 8
Formation and Planarization of Si Ridges in LowTemperature Si Process
J. Moon, C.-Y. Sohn, C.-H. Chung, Y.-H. Kim, J. H. Lee
ETRI, Korea

In this study, the characteristics of Si ridges formed after laser crystallization of a-Si films have been studied means of atomic force andsecondary electron microcopies. We report on the ridge height
dependency on parameters such as laser energy density and initial a-Si
film thickness. To lessen ridge height, we have exercised single shot
post-laser treatments at various laser energy densities. Post laser
treatments on ridges have an effect of leveling the heights of ridges andlead to improved TFT characteristics.
AMDp - 7

A-Si Gate Driver Integration with Time Shared Data
Driving
B. Kim, Y. H. Jang, S. Y. Yoon, M. D. Chun, H. N. Cho,
N. W. Cho, C. Y. Sohn, S. H. Jo, S. C. Choi, C.-D. Kim,
I.-J. Chung
LG.Philips LCD, Korea

Integrated a-Si gate driver for time-shared data driving has beendeveloped. We characterized large-sized a-Si TFTs made with a normal
process and found that the conductance of TFTs could be scaled withnearly same mobility and threshold voltage. The circuit has beensuccessfully integrated in 4” QVGA (320*240) TFT-LCD panel, in which
only one 480-channel driver IC is needed.
AMDp - 8Integrated Gate Driver Using Highly Stable a-Si TFTs
M. Chun, Y. H. Jang, S. Y. Yoon, B. Kim, H. N. Cho,
S. C. Choi, N. W. Cho, H. Y. Kim, S. K. Kim, C.-D. Kim,
I.-J. Chung
LG.Philips LCD, Korea

The degradation of integrated gate driver circuits for active matrix
display has been analyzed. Integrated gate driver circuit using highly
stable a-Si TFT’s is more stable than that consisting of conventional
ones and there is a strong correlation between clamping voltage of acircuit and threshold voltage of its pull-down transistors. The circuit has
been integrated in 14.1 inch XGA (1024*768) TFT-LCD panel.
AMDp - 9

Effect of Pentacene Thickness on Bottom and Top
Contact Organic Thin Film Transistors
D. Gupta, M. Katiyar, D. Gupta
Indian Inst. of Tech. Kanpur, India

In this paper we present the effect of pentacene thickness on the output
and transfer characteristics of the bottom and top contact organic field
effect transistor. The device parameters like threshold voltage, mobility,
on/off ratio and subthreshold swing are calculated using ideal MOSFET
equations for inorganic semiconductors. The thickness effect is
discussed in terms of the thickness dependent changes in film
morphology and device physics.

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ThursdayAMDp - 10

December 8
Effect of Interface Plasma Treatments on Electrical
Properties of a-Si:H TFTs
C. Y. Wu, C. H. Ma
Chunghwa Picture Tubes, Taiwan

The high stability of a-Si:H TFTs device is made of silicon nitride as
dielectric are submitted to the different plasma treatments of thesemiconductor/insulator interface by PECVD. The process parameters ofplasma gas type, gas flow rate, RF power, and treatment time ofinterface treatment are taken into account and analyzed by Taguchi
experimental design method. Results show the gas type is the major
factor that affect the threshold voltage and mobility of a-Si:H TFTs
device. In the future, the stressing experiments by using different
stressing time with various stressing temperature are used to evaluate
the performance of devices.
AMDp - 11

Novel Pixel Structure of IPS Panel for High Aperture
Ratio Using Inorganic Layer
H. S. Chang, D. H. Lee, W. S. Kang, H. S. Jin, Y. S. Jeong,
D. S. Lee, I. J. Chung
LG.Philips LCD, Korea

A pixel design and a manufacturing process for in-plane switching (IPS)
mode were optimized to increase aperture ratio of IPS panel using
inorganic passivation layer with low dielectric constants. With this new
design and process, we could realize 28% improvement in transmittancecompared with conventional IPS panel, suppressing vertical crosstalkwhich is the trade-off with a pixel structure of higher aperture ratio.
AMDp - 12

Pentacene OTFT Array for AM-OLED on Plastic with
Self-Organized Process
J. H. Kim*,**, S. H. Han*,**, S. M. Cho*,***, S. H. Lee*,**,
E. Y. Lee*,**, J. H. An*,**, M. H. Oh***, D. J. Choo*,**,
J. Jang*,***Advanced Display Res. Ctr., Korea**Kyung Hee Univ., Korea***Dankook Univ., Korea

We fabricated a 2 inch, 80 ppi AMOLED backplane with pentacene
OTFT array using self-organized process. The organic bank formation is
an important issue because the organic active layer can be damaged
during the bank formation. The double layers of polyvinylalcohol andacryl were selected as a bank material. There were some degradation ofmobility and subthreshold currents during the processes of passivation
and bank formation by chemical solvent. Even though, the performanceafter whole process showed that the μSAT of ~ 0.8 cm2/Vs and on-off
current ratio of >107 for the OTFTs, which are enough to drive AMOLED.

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ThursdayAMDp - 13

December 8
11-Stage OTFT Ring Oscillator on Plastic
S. M. Cho*,**, S. H. Han*,***, J. H. Kim*,***, S. H. Lee*,***,
J. W. Choi*,***, E. Y. Lee*,***, J. H. An*,***, B. S. Bae*,***,
D. J. Choo*,***, M. H. Oh**, J. Jang*,***Advanced Display Res. Ctr., Korea**Dankook Univ., Korea***Kyung Hee Univ., Korea

We studied the inverter and ring oscillator made of pentacene TFTs onplastic substrate. A ring oscillator consists of inverters with bootstrappingtransistor. The TFT has a field effect mobility of 0.5~0.6cm2/Vs, an on/off
current ratio of 107. It has a signal propagation delay as low as 4.4μsec
per stage and its frequency is as high as 10 kHz at the bias voltage of
40V. These results indicate that the OTFT circuit can be widely used forelectronic applications.
AMDp - 14

LTPS TFT-Based Current Mode Digital Logic Circuit
Design Method for System-on-Panel
J. C. Lee, M. P. Hong, J. Y. Jeong
Univ. of Suwon, Korea

We present two operation modes of the current mode logic inverter/
buffer. For optimum delay and power consumption, we develop asystematic design procedure and verify that 78% and 28% improvementin power and chip area can be obtained compared to static CMOS
counterpart.
AMDp - 15

Temperature Dependence of Amorphous Silicon
Oscillator
J. W. Choi, Y. S. Kim, S. H. Kim, J. H. Oh, J. H. Hur,J. H. Cheon, B. S. Bae, J. Jang
Kyung Hee Univ., Korea

A RC oscillator using amorphous silicon thin-film transistors wasdeveloped [1]. The frequency of oscillator was controlled by adjusting
the feedback resistance of the oscillator. When VDD is 35 V, measured
frequency of the oscillator was 143 kHz at 26℃, which is useful for lowend RFID (radio frequency identification). For the application to the
RFID circuit, we studied the temperature dependence of oscillation
frequency, output voltage and power consumption.
AMDp - 16

Ion Doping Effect on Laser Crystallized Poly-Si Films
E. H. Kim, K. H. Kim*, S. J. Park, Y. M. Ku, C. O. Kim*,
J. Jang
Kyung Hee Univ., Korea*Han Yang Univ., Korea

Ion doping effect on laser crystallized poly-Si has been observed. The
sheet resistance of ion doped poly-Si decreases with increasing B2H6/H2
plasma ion dose. The sheet resistance of the ion doped CLC poly-Si
was lower than that of ELA poly-Si under the same doping conditions.
Comparing Raman spectra of ion doped poly-Si films measured before
and after thermal annealing, it is observed that the surface damage due
to ion doping on the poly-Si films can be recovered

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ThursdayAMDp - 17

December 8Adhesion Evaluation of Sputtered Copper Films on
Glass Substrates by Microindentation Measurement
for TFT-LCDs.
C. C. Lai, M. K. Tseng, H. K. Chiu, Y. P. Lin, Y. C. Kuan,
K. S. Sun
Chunghwa Picture Tubes, Taiwan

Quantitative adhesion testing of copper films on glass substrate isinvestigated by microindentation measurement. The object of adhesion
testing is to evaluate the adhesion of soft films on hard substrates byVicker hardness testing. Experimental result shows interposing atransparent dielectric layer (SiNx) between copper films and glass
substrates promotes adhesion abruptly. Furthermore, the effect of
sputtering parameters and precleaning plasma treatment on adhesion is
discussed by Taguchi method analysis.
AMDp - 18

Direct-Deposition of Microcrystalline-Si:H at Low
Temperature by ICP-CVD
C. J. Huang, I. H. Peng, L. T. Wang, T. C. Wong, J. F. Chang
ERSO/ITRI, Taiwan

High quality films of microcrystalline-Si:H (μc-Si:H) were directly
deposited on glass substrates at 150℃ by ICP-CVD. The crystallinity of
μc-Si:H is over 91% and the grain size is about 40 nm. The incubation
layer observed is only about 2-3 nm thick, indicating good crystallinity
and few amorphous phase remaining between the oxide and μc-Si:H.
The n+ μc-Si:H layer is also under development, sheet resistance value
was lower than 104 Ω/sq and the resistivity was about 2.7 Ωcm.
AMDp - 19

Manufacturing Process of 4 Mask a-Si TFT Panel by
One Step Dry Etching on Mo/Al/Mo Data LineS. Y. Yoo, H. S. Choi, J. I. Ryu, W. B. Lee, J. Y. Lee
BOE HYDIS TFT LCD SBU, Korea

Improved 4-Mask process applied with Al based multi-layer data line
was developed in order to reduce manufacturing process. This process
have several issues on n+ a-Si:H remain and Al corrosion because of
applying to 1-step dry etch with Mo/Al/Mo data line. However, it brings amatter to a successfully settlement and meets with good results about
an array process and display performance as new Al dry etch. Moreover,plasma treatment process are applied to the dry etch process.

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ThursdayAMDp - 20

December 8
Short Channel Effects in Excimer Laser Crystallized
Low Temperature Poly Silicon (≦500℃) Thin Film
Transistors on Glass Substrates for Active Matrix
Organic Light Emitting Diode Technology
B. Choi, D. Choi, H. Park, J. Jung, T. Yang, H. Kim,
H. Chung
Samsung SDI, Korea

As LTPS poly silicon TFT technology evolves into near the submicrometer regime, as for single crystallinity, polysilicon devices also
suffer from short channel effects. Their short channel effects thus have a
direct impact on the LTPS poly silicon devices. The threshold voltage
and DIBL coefficient versus the channel length of poly silicon devices
has been reported as gate lengths scale down to 1μm. The inverse
subthreshold slope versus the channel length is also analyzed to 1μm
gate length for both n and p TFTs. Work on TFTs fabricated on glass
substrates (370×400 mm) is summarized.
AMDp - 21

Low Cost and Uniform Solid Phase Crystallization
without Metal Catalyst Employing Alternating
Magnetic Field for AM-OLED
H.-S. Seo, D. H. Nam, N. B. Choi, S. H. Paek, T. J. Ahn,
J. S. Yoo, J.-M. Yoon, S.-W. Lee, C.-D. Kim, I.-J. Chung
LG.Philips LCD R&D Ctr., Korea

P-channel polycrystalline silicon thin-film transistors (TFTs) have been
fabricated employing alternating magnetic field crystallization (AMFC)
method for AM-OLED panel, which exhibits no line mura due to uniform
device characteristics. Pre-treatment using boron dopant before
crystallization, and H2 plasma hydrogenation before deposition of SiO2
gate insulating layer remarkably improve the characteristics of TFTs,
such as threshold voltage, mobility, and sub-threshold slope. AMFC is
suitable for large size AM-OLED panel due to uniform TFT
characteristics, no crystallization mura, no substrate bending, and lower
cost than laser crystallized p-Si.
AMDp - 22

Characterization of Poly-Si TFT Array on Plastic
Substrate for AM-OLED
J. Y. Kwon*, D. Y. Kim*, J. S. Jung*, J. M. Kim*, H. Lim*,K. B. Park*, H. S. Cho*, X. Zhang*, H. Yin*, W. Xianyu*,
T. Noguchi*,***Samsung Advanced Inst. of Tech., Korea**Sungkyunkwan Univ., Korea

We present the characterization of poly-Si TFT fabricated below 170℃
on plastic substrate using excimer laser crystallization of Xe sputtered Si
films and gate insulator by using inductively coupled plasma CVD. In
addition, stability and uniformity of TFT array between before and after
sintering will be compared.

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ThursdayAMDp - 23

December 8
Fabrication of High Performance Low Temperature
Poly-Si on Flexible Metal Foil
D. J. Park, Y. H. Kim, J. H. Chung, J. H. Mun, J. W. Lim,S. J. Yun, D. W. Kim, J. H. Lee
ETRI, Korea

We fabricated low temperature polycrystalline silicon TFT on metal foil
substrate below 200℃. For preventing gate dielectric leakage current
and enhancing electric field between gate and source, crystallizing andactivation were processed before deposit gate dielectric. The n-channel
TFTs with W/L=7/20 on metal foil exhibited the field-effect mobility of
176cm2/Vs, the on/off current ratio of 106, the threshold voltage of 7V,
and the subthreshold slope of 0.8V/dec.
AMDp - 24

Ink-Jet Printed Organic Transistors Using
Dihexylquaterthiophene (DH4T)
J. Y. Kim*, D. H. Song*, Y. K. Lee*, T. J. Park*, S. K. Kwon*,
M. H. Kang*, S. H. Han*, S. M. Cho*,**, J. H. Kim*,
S. H. Lee*, J. Jang*, A. Sautter***, D. Albertalli*****Kyung Hee Univ., Korea**Dankook Univ., Korea***H. C. Starck, Germany****Litrex, U. S. A.

We studied the fabrication of organic thin-film transistor (OTFT) using a
DH4T (dihexylquaterthiophene) by inkjet printing. The OTFT has bottom
gate, bottom contact structure on plastic. Au/Cr and Al were used assource/drain and gate, respectively. The gate insulator was a crosslinked PVP. The active layer was printed by jetting a DH4T solution. The
OTFT exhibited an on/off current ratio of ~105 and a field-effect mobilityof 1.5 x 10-2 cm2/Vs.
AMDp - 25

Effect of Buffer SiO2 on Plastic Substrate for Laser
Crystallization of Si Films
J. S. Jung, D. Y. Kim, J. M. Kim, J. Y. Kwon, K. B. Park,
H. Lim, T. Noguchi*
Samsung Advanced Inst. of Tech., Korea*Sungkyunkwan Univ., Korea

We have investigated the factors that the effect of the buffer SiO2 layerstrongly related to crystallization of Si film during laser annealing.
Crystallization of Si films on plastic substrate is strongly affected bythickness, roughness of buffer SiO2 and substrate bending. The
increasing buffer layer thickness prevents the agglomeration of Si film
during laser irradiation. The stress in Si film by substrate bending also
induces agglomeration of Si films. Finally higher RMS roughness ofbottom layer under Si induced larger nucleation site during crystallizationand hence smaller grains.

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ThursdayAMDp - 26

December 8
ZnO TFT Fabricated at Low Temperature forApplication of Active-Matrix Display
C.-S. Hwang, S.-H. K. Park, H. Y. Chu
ETRI, Korea

ZnO TFT was studied for the application of flexible display. We use ALD
method for the active layer at low temperature (under 150℃）．
Adoption of ZnO:Al as source/drain layer, which is also grown using
ALD method, gave low contact resistance and good device behavior aswell as transparency. The manufactured TFT gave field effect mobility
0.95 cm2/Vs, and flat band voltage 1.7V.
AMDp - 27

Oxygen Effect on Laser Crystallization of Sputtereda-Si Film on Plastic Substrate
J. M. Kim*, D. Y. Kim*, J. S. Jung*, J. Y. Kwon*, K. B. Park*,
H. Lim*, T. Noguchi*,***Samsung Advanced Inst. of Tech., Korea**Sungkyunkwan Univ., Korea

We studied a-Si film deposited on plastic substrate by rf sputtering. a-Si
films were deposited at room temperature and crystallized using excimer
laser. It was found that the a-Si film was delaminated at low laser
energy densities below the energy condition for distinct lateral grain
growth. Oxygen contents were optimized for a-Si films deposited by Xe
sputtering. The oxygen gas incorporation is speculated to increase thesurface roughness and to induce the Si film agglomeration during laser
crystallization.
AMDp - 28

TRMVA, TRRVA and URTMVA LCDs for Mobile
Applications
S. C. F. Jiang, C. H. Lin, Y. R. Chen, C. M. Chang,
P. L. Chen, K. Y. Lin
AU Optronics, Taiwan

We developed the new technologies that are the transflective multidomain vertical alignment (TRMVA), the transflective rubbed verticalalignment (TRRVA), and the ultra reflectivity transmissive multi-domain
vertical alignment (URTMVA). These are used on the transflective liquid
crystal displays (TRLCDs) for mobile application. TRMVA and TRRVA
utilized the standard process steps and URTMVA utilized less process
steps. These optical properties can be achieved the high contrast ratio
and widely viewing angle in various environments.

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ThursdayAMDp - 29

December 8
Fabrication of P-Type Ultra Low Temperature TFT
under 200℃
H. Lim*, K. B. Park*, H. Yin*, J. Y. Kwon*, X. Zhang*,
H. S. Cho*, J. M. Kim*, D. Y. Kim*, J. S. Jung*, W. Xianyu*,
T. Noguchi*,***Samsung Advanced Inst. of Tech., Korea**Sungkyunkwan Univ., Korea

We studied the p-channel (p-ch.) poly silicon (Si) thin film transistor(TFT) using ultra low temperature processes below 200℃． By
performing the low temperature thermal annealing after obtaining TFT,
the device performances, such as the mobility of 64 cm2/Vs, and the
sub-threshold slope (S.S) of 0.74 V/dec., improved drastically. The p-ch.
circuits or complementary MOS (CMOS) design on plastic is expected
for future advanced flexible flat panel display (FPD).
AMDp - 30

New Low-Power Shift Register Driving Scheme for
Active Matrix Displays
C.-W. Chang, C.-C. Chen
InnoLux Display, Taiwan

We have proposed a novel shift register driving scheme to implement on
the glass which displacing the IC. The proposed driving scheme uses
only two clock signals and lesser devices which can reduce bothersome
clock pervert. By employing bootstrapped voltage and switching phaseclocks, we achieve shift register driving successfully. The proposed
scheme has lower power consumption and lower number mask in
manufacture.
AMDp - 31

New 3-Level Driving Scheme and Image Quality
Improvement for Active Matrix Displays
C.-W. Chang, C.-C. Chen, Y.-C. Cheng, H.-M. Chen
InnoLux Display, Taiwan

We propose a novel 3-level register driving scheme for scan line tocompensate the coupled voltage on the pixel. The proposed method ofdriving is good at reducing the effect of feedthrough voltage. In thispaper, we compared 3-level driving with 2-level driving scheme. Throughcombine the electric and liquid crystal simulation, the simulation result
also shows the comparison of image quality.
AMDp - 32

Frequency Response Analysis of Low Capacitive
Coupling Design for IPS and FFS Mode LCDs
Applications
H. Y. Chen, T. H. Hsieh, Y. C. Kang, Y. C. Lin, S. T. Yan,
C. L. Yang, J. P. Pang
Innolux Display, Taiwan

A novel method to suppress capacitive coupling between data line andpixel electrode for IPS and FFS pixels has been proposed in this work.
By making a slit structure on ITO electrode close to data line at a wellcalculated and designed location, the coupling noise can be drasticallyreduced to 4% compared with conventional structure. A frequency
response analysis for this circuit has also been performed to ensure all
operation frequency for panels is feasible.

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ThursdayDecember 8

AMDp - 33

Moving Picture Quality Amelioration Using Adaptive
Image Contrast Promotion Technique (ACPT) at TFT
LC-TV Module
K.-H. Liu, C.-L. Wu, M.-W. Huang, J.-Y. Huang,
W.-T. Tseng, H.-T. Yu
Chunghwa Picture Tubes, Taiwan

Apply the adaptive image contrast promotion technique (ACPT) in the
TV module, users could arbitrarily adjust the enhancement degrees forthey prefer, then the moving picture contrast ratio and brightness areenhanced automatically and adaptively based on the image data
distribution of pervious n-k frames (k≧1). Furthermore, this techniquecould overcome the drawbacks of contrast enhancement method suchas histogram equalization using scaled histogram equalization withseveral restricting conditions and analog gamma voltages correction
schema.
AMDp - 34

New Charge Pump with Less Pumping Capacitors
for LTPS Integrated Circuits
W.-C. Chen, H.-Y. Lin, C.-M. Chiu
Toppoly OptoElect., Taiwan

A novel X2 (X2) charge pump with less numbers of pumping capacitors
was developed. The circuit shows not only output voltage equivalent tothe conventional X4 charge pump but also higher power efficiency thanconventional one due to the less pumping stages. Furthermore, lesspumping capacitors also helps to reduce the external pin counts for lessconnection pins and cost saving especially for COG (chip on glass) type
panel design.
AMDp - 35

Overlap Scanning of CW Laser for Crystallization of
a-Si
K. H. Kim*,**, E. H. Kim*, S. J. Park*, Y. M. Ku*, C. O. Kim**,J. Jang**Kyung Hee Univ., Korea**Han Yang Univ., Korea

Crystallization of a-Si by overlap scan using CW Nd:YVO4 laser has
been investigated with SEM, AFM, and Raman spectroscopy. The
results show that the grains existing near each laser scan boundary
meet together forming single grains. That means the width of grains
formed by prior-scanning affects the width of the grains formed by thefollowing scan. Thus, the overlap scanning method can be applied tolarge grained poly-Si fabrication for LTPS processing.

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ThursdayDecember 8

AMDp - 36

Solid Phase Crystallization of Amorphous Silicon at
Temperatures Higher than 600℃
W.-E. Hong, S.-J. Oh, J.-S. Ro
Hongik Univ., Korea

A metal foil would have a great potential as a substrate for the next
generation flexible display. The annealing temperature of solid phasecrystallization (SPC) is not restricted to 600℃ when using a metal foil.
Crystallization rate becomes dramatically rapid at higher temperatures
since SPC kinetics is controlled by nucleation with high value ofactivation energy. We report SPC behaviors of high temperature,including kinetics, defect-recovery and texture-evolution, compared tothose of low temperature.
AMDp - 37

Effect of Multiple Reflection on Periodic Structure of
Si Film Crystallized by Linearly Polarized Nd:YAG
Laser
S. Horita, K. Nishioka, H. KakiJapan Advanced Inst. of Sci. & Tech., Japan

In the Si film crystallized by a linearly polarized Nd: YAG laser beam, thegrain boundaries are aligned periodically. This periodic structure is
produced by the periodic beam energy density profile generated byinterference between the coherent incident and high order diffracted
beams. The effect of multiple reflection in the Si film was investigatedtheoretically on the surface structure of the crystallized film. The suitable
thickness for this method was estimated by this theoretical analysis andverified experimentally.
AMDp - 38

Comparisons of a-Si:H TFTs on Glass and Plastic
Substrate at 160℃
C.-C. Cheng, L.-T. Wang, J.-Y. He, Y.-F. Wu, Y.-H. Yeh
ERSO/ITRI, Taiwan

Low temperature process is an important factor for active matrix plastic
display. Low temperature reduced the thermal stress and substrate
deformation. In this study, a-Si:H TFTs were successfully fabricated at
160℃ on glass and PES substrate. The maximum mobility is 0.2 cm2/
V-s, the subthreshold swing is 0.8 V/decade, and the threshold voltage
is 2.8 V. The off currents are below 10-12 A and the ION/IOFF ratio is 107
at Vds=10 V. Characteristics and reliability of a-Si:H TFTs werecompared.

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ThursdayAMDp - 39

December 8
Novel Compact SPICE Model for Pixel Signal
Analysis of LCD Panel
S.-I. Yoon, C.-Y. Jung*, S.-H. Yoon, T. Won*
Sanayi Sys., Korea*Inha Univ., Korea

In this paper, we report a novel compact SPICE model for pixel signal
analysis of AMLCDs. In this work, we generated a SPICE model for aunit cell of TFT-LCD by taking all of parasitic capacitances into accountand we investigated the influence of the parasitic capacitance on a pixel
voltage drop. In order to calculate the capacitance, we employed a finite
element method. We calculated 21 capacitances including LC
capacitance as a function of the applied voltage and used a piecewise
linear voltage-controlled capacitor model with calculated values.
AMDp - 40

Analysis of Degradation of LTPS-TFT under Inverter
Operation and Improvement of Reliability by CLDD
Structure TFT
N. Nakagawa, Y. Toyoda, K. Sugahara, T. Nakahata
Mitsubishi Elec., JapanThe hot carrier instability is the most important issue for LTPS-TFT
technology. In this study, we analyzed that the degradation of N-ch TFT
under inverter operation is caused by AC stress and DC stress duringswitching operation and our newly developed CLDD structure which has
both GOLD and LDD regions shows extremely improved reliability
compared to conventional LDD structure under high voltage and highfrequency operation.
AMDp - 41L

Double Pulse Scan Method for Field Sequential
Color Driving of an Optically Compensated Bend
Cell
S. R. Lee, C. G. Jhun, T.-H. Yoon, J. C. Kim, J. D. Noh*,
D. H. Suh*, J. Y. Lee*
Pusan Nat. Univ., Korea*BOE HYDIS Tech., Korea

We propose an overdriving method that uses double pulse scan (DPS)
within each sub-frame time. We applied it to a field-sequential color(FSC) driving of a thin-film-transistor liquid crystal display (TFT-LCD) in
the optically compensated bend (OCB) mode. We have shown by
experiment that the DPS method shorten the gray-to-gray response time
remarkably so that FSC driving can be applied to a-Si TFT-LCDs with
XGA resolution.

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ThursdayAMDp - 42L

December 8
Offset Cancelling Scheme of P-type Poly-Si Analog
Buffer Employing Voltage Level-Shifter
W.-J. Nam, H.-S. Shin, W.-K. Lee, S.-G. Park, M.-K. Han
Seoul Nat. Univ., Korea

New analog buffer circuit using p-type poly-Si TFT for digital interface is
proposed. The proposed source-follower type buffer memorizes andcancels the offset voltage between the input and the output. In order toreduce the output deviation, a voltage level shifter which preserves thenode biasing condition of buffer TFT during the offset cancellation is
employed. In our simulation results, it exhibits a small offset deviation
regardless of VTH variation of buffer TFT.
AMDp - 43L

Advanced Transmissive LCD with High Reflectance
M. C. Lee, C. Y. Tsai, W. C. Chang, D. L. Ting
Toppoly OptoElect., Taiwan

To realize a transmissive LCD with high reflectance for mobile phone,
we propose the new ATR technology with high aperture ratio, new extra
reflective film and novel backlight architecture. In this paper, we show
the new ATR technology to improve a transmissive LCD image quality
under sunlight. Reflectance could be achieved 2.5% and CR is about
6.5.
AMDp - 44L

Effects of Crystallographic Orientation of SingleCrystalline Seed on m-Czochralski Process in
Excimer-Laser Crystallization
M. He, R. Ishihara, Y. Hiroshima**, S. Inoue**, T. Shimoda*,
J. W. Metselaar, C. I. M. Beenakker
Delft Univ. of Tech., The Netherlands*Seiko Epson, Japan

Single-crystalline Si wafers are used as seeds for the location-controlled
grain growth with μ-Czochralski process during excimer laser
crystallization (ELC). With an enough energy density, Si wafers seeds
liquid epitaxial growth and grains with respective orientation wereobtained at the predetermined positions. The islands grown from (100)seeds have the fewest twin boundaries, comparing to those from (110)and (111). By using (100) -orientated SOI wafer as the seeds, the fewer
twin boundaries can be reduced further by the slow heat conduction to
the substrate.
AMDp - 45L

High Sensitivity Test Circuit Constructed with Sense
Amplifier on the p-Si TFT-LCD
I. Ishii, J. Masui, M. Murade, H. Iizuka, K. Sakata
Seiko Epson, Japan

We produced the high sensitivity test circuit which consisted of Sense
Amplifier (SA) on the p-Si TFT glass panel. The development and mass
production of a low cost panel become possible by means of short TurnAround-Time feed back for the sudden problem in the array and arrayprocess development.

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ThursdayAMDp - 46L

December 8
Investigation on Double Layer Gate Electrode
Etching Process for Flexible Display Application
C.-H. Wei, Y.-H. Chen*
Tatung Univ., Taiwan*AU Optronics, Taiwan

A new process was developed in which plastic sheets are laminated on
glass carrier wafers and run through standard TFT process. Due to thetemperature limits, a tapered double layer gate electrode Al-Cr was
proposed to increase the conductivity and prevent hillock. This structure
was fabricated by a multi-step ICP etching and the contact resistancecompared with MoW was good.
AMDp - 47L

Fabrication of Si Thin-Films with Arrays of Long andNarrow Grains for Next Generation TFTs
T. Katou, Y. Taniguchi, M. Hiramatsu, K. Azuma,
M. Matsumura
Advanced LCD Tech. Dev. Ctr., Japan

Arrays of long and narrow grains were successfully grown by phasemodulated excimer-laser-annealing (PMELA) method of Si films. The
width of grains reduced steadily by thinning the Si layer. Furthermore,
the crystal orientation can be controlled at {110} along the growth
direction and within {001}~{112} along the normal direction for a 30 nmthick Si layer.
AMDp - 48LImage Simulation for Full Analysis of TFT-LCD Panel
C. Jung, S. Yoon*, T. Won
Inha Univ., Korea*Sanayi Sys., Korea

In this paper we propose a novel simulation scheme for full analysis oflarge-area thin film transistor liquid crystal display (TFT-LCD) panel. The
method provides viewable image as well as electrical characteristics of
TFT-LCD panel including all pixels. We especially took into account theparasitic capacitors induced by the neighboring gate and data lines, andthe voltage-dependent LC (liquid crystal) pixel capacitor. For an
exemplary 10.4” SVGA (800×600) LCD panel, the simulation confirmed
crosstalk, flickers, shading and grayscale error.
AMDp - 49L

Flexible Active-Matrix Cholesteric Display Driven by
OTFT
T.-S. Hu, Y.-K. Wang, J.-Y. Yan, C.-C. Hsieh, T.-H. Lin,
T.-W. Lee, L.-Y. Huang, W.-L. Lin, H.-Y. Cheng, Y.-Y. Shen,
J.-C. Ho, C.-C. Lee, S.-H. Liu, Y.-C. Lin, K.-L. Cheng
EROS/ITRI, Taiwan

Organic thin-film transistor arrays with 64×128 pixels are fabricated.
Pentacene as organic semiconductor was deposited on bottom gatedevice. The OTFT show a mobility of 0.01 cm2/V-s and on/off current
ratio of about 105. Moreover, the active matrix OTFT-ChLCD was
fabricated by integrating organic thin film transistor arrays andcholesteric liquid crystal display on plastic substrate.

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ThursdayAMDp - 50L

December 8
Ultra-Low Temperature (below 100℃) Si TFT Process
for Fflexible Display
K. Park, H. Lim, J. Kwon, J. Jung, D. Kim, J. Kim,
T. Noguchi*
Samsung Advanced Inst. of Tech., Korea*Sungkyunkwan Univ., Korea

High quality silicon oxide films were deposited at 100℃ by Inductively
coupled plasma-chemical vapor deposition (ICP-CVD) system using
dilute siliane (in argon) and oxygen as reactant gases. The I-V curve
showed a breakdown field with variation process parameter, resulting in
the measured dielectric breakdown field strength of 7.8MV/cm. According
to the various metal deposition methods, The C-V curves of SiO2
showed the flat band voltage (Vfb) shift from -29V to -5V. Also wefabricated SOI TFT, resulting in 487cm2/Vs, 0.19V/dec and 2.4Vth. Thismethod is compatible with flexible display device process using plastic
substrates.
AMDp - 51L

Reliable Integrated a-Si Select Line Driver Driving
Schemes
L. Lin*,**, B. J. Liang*, C. M. Huang**, C.-C. Lai**,
S.-P. Chiang***Univ. of Feng Chia, Taiwan**WINTEK, Taiwan

A reliable integrated a-Si select line driver (RASD) has been developed
and demonstrated in SID ’05. Some advanced driving methods arecontinuing to build including the progressive scan driving schemes andthe pre-charge scan schemes. All of them are simulated by utilizing the
SPICE simulation first, and then implemented into our timing controlling
circuits. These schemes are expected to richen the control signals ofpresent a-Si gateless drivers.
AMDp - 52L

Low Power Consumption for Circuit Integration of
Low Temperature Poly-Si TFT-LCDs
M. Karube, T. Tsunashima, H. Nishimura, H. Kimura,
A. Ishida, T. Motai, T. NishibeToshiba Matsushita Display Tech., Japan

Today’s mobile devices strongly require lower power consumption of
their displays. To meet this demand, we have studied Multi Driving
method for six signal lines, Power Supply Control for buffer amplifiers,
and CC Driving method though further circuits integration on the glass
substrate. These circuit ideas are implemented in a 5.6-cm QVGA panel.

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ThursdayAMDp - 53L

December 8Highly Efficient DC-DC Converter Employing P-Type
Poly-Si TFTs for Active Matrix Displays
H.-J. Lee, W.-J. Nam, J.-H. Lee, S.-M. Han, M.-K. Han
Seoul Nat. Univ., Korea

P-type low temperature poly-Si (LTPS) TFTs DC-DC converter is
proposed and verified. We have designed the negative output DC-DC
converter employing 2 clock signals of 5V swing which are overlapped
at high voltage. The output voltage and power efficiency depending on
various output load current are investigated by SPICE simulation. The
simulation results show that the proposed DC-DC converter may supply
stable output voltage and have higher power efficiency than that of thewidely used Dickson’s charge pump considerably.
AMDp - 54L

Effect of Lightly Doped Drain in Short Channel Low
Temperature Poly-Si Thin Film Transistor for Active
Matrix Display
J. H. Park, W. J. Nam, J. H. Lee, K. Y. Lee*, K. J. Yoo*,
H. H. Park*, M. K. Han
Seoul Nat. Univ., Korea*Samsung SDI, Korea

Decrease of threshold voltage in low tempera-ture poly-Si thin filmtransistor with decreasing channel length is observed. The source
barrier reduction in short channel makes threshold voltage decrease andon and off current increase in p-type poly-Si TFT without a lightly doped
drain (LDD). The threshold voltage variation of poly-Si TFT with a LDD
is very little due to relief overlapping of electrical field between sourceand drain.
AMDp - 55L

Bottom Contact Pentacene Thin Film Transistors withITO Source and Drain Electrodes for Display
Applications
C.-W. Han*,**, H.-S. Shin*, J.-H. Park*, M.-K. Han*,
H.-S. Pang**, K.-Y. Kim**, I.-J. Chung***Seoul Nat. Univ., Korea**LG.Philips LCD, Korea

Bottom contact organic thin film transistors (OTFTs) which employ
indium tin oxide (ITO) as the source/drain electrodes instead of gold are
fabricated. The pentacene TFT with ITO source/drain electrodes exhibitsa saturation mobility of 0.09cm2/Vs and on-off current ratio of the order105. ITO electrode was modified to more hydrophobic surface with lower
surface energy by itself after TFT fabrication. The fairly grain size of
pentacene film up to 0.3 μm was observed on ITO electrode in OTFT.

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Thu./Fri.
AMDp - 56L

December 8/9
SLS-based CMOS LTPS Process and its Application
to 2.2-inch QVGA Panel
M. K. Ryu, E. S. Kim, K. S. Son, J. H. Lee, J. S. Im,
Y. B. Kook, H. S. Kwon, J. H. Park, G. Son, C. H. Kim,
S. J. Yoo, S. S. Kim, J. W. Choi, J. M. Jun, J. Y. Lee
BOE HYDIS Tech., Korea

We report n-shot SLS (Sequential Lateral Solidification) process and its
application to 2.2-inch QVGA (320x240) TFT-LCD with integrated gate
driver and 3:1 demultiplexing RGB data-switch. Integrated CMOS
circuits composed of 2 shot SLS poly-Si TFTs, were successfully
operated. Pixel TFTs showed uniform and stable characteristics.

Friday, December 9
9:00 - 10:30

Sunport Hall Takamatsu Main Hall

AMD10: System on Panel (1)Chair：
Co-Chair：

C.-W. Ko, AU Optronics, Taiwan
H. Haga, NEC, Japan

AMD10 - 1:
9:00

Invited Asynchronous Design: An Enabler for
Flexible Microelectronics
N. Karaki, S. Inoue, T. Shimoda
Seiko Epson, Japan

Flexible microelectronics featuring LTPS TFT technology, surface-freetechnology by laser annealing/ablation (SUFTLA ), and asynchronous
design language Verilog+ is an emerging technology expected to
become a platform for developing thin flexible lightweight lesselectromagnetic emissive low-power robust devices. Verilog+ comprises
a subset of Verilog HDL and minimal primitives for describing thecommunications between asynchronous processes. The design
instance, a flexible 8-bit asynchronous microprocessor, ACT11
consumes 180uA running at 5V, 500KHz. The power level is 30% of thesynchronous counterpart.
AMD10 - 2:
9:25

Invited Touch Panel Function Integrated LCD Using
LTPS Technology
H. Nakamura, T. Nakamura, H. Hayashi, N. Tada,
M. Yoshida, M. Ishikawa, T. Motai, T. NishibeToshiba Matsushita Display Tech., Japan

We propose a new configuration of display having an image capture
function suitable for low-temperature polycrystalline silicon (LTPS) TFT
fabrication process. High density sensor and 1-bit A/D converter are
monolithically integrated into the glass substrate. With this configuration,a touched location can be determined by generating a grayscale bitmap
in the image processing LSI, for which smaller number of data pins are
required, compared with those required for a conventional configuration
having an external A/D converter LSI.

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FridayAMD10 - 3
9:50

December 9
7-in. WVGA System on Panel LCD with Integrated
Gate Driver Including Dual Logic Shift-Register
K. E. Lee, K. M. Lim, M. K. Baek, J. S. Yoo, J. M. Yoon,
J. S. Yu, B. Y. Lee, H. C. Kang, Y. S. Yoo, C. D. Kim,
I. J. Chung
LG.Philips LCD, Korea

A 7-in. WVGA SOP LCD employing an advanced CMOS LTPS
technology has been developed. Integrated gate driver includes dual
logic redundancy structure and integrated data driver comprises
sequential analog sampling circuit having error compensation scheme.
These increase the products yield and display quality.
AMD10 - 4
10:10

Novel Flash Memory Structure Using Sequential
Laterally Solidified Low Temperature Poly-Si
Technology
H. T. Chen, S. I. Hsieh*, Y. C. Chen, P. H. Tasi, C. L. Chen,
C. J. Huang, J. X. Lin, C. J. Chang, Y. C. King*ERSO/ITRI, Taiwan*Nat. Tsing-Hua Univ., Taiwan

A novel field-enhanced flash memory device fabricated by sequential
lateral solidified (SLS) low temperature poly-Si (LTPS) technology on
glass substrate was investigated. The poly-Si protrusions at grainboundaries (GB) as a result of SLS process can be well-controlled andlocated along the width direction of the transistor. Protrusions at thegrain boundaries are utilized as emitting source to achieve a flash
memory device with low operation voltage （ 20V), fast program/erase
time, and wide Vth window by field-enhanced channel hot electron (FECHE) injection for programming and field-enhanced band-to-band hothole (FE-BBHH) injection for erase.

!

----- Break -----

10:50 - 12:30

Sunport Hall Takamatsu Main Hall

AMD11: System on Panel (2)Chair：
Co-Chair：N. Karaki, Seiko Epson, Japan
K. Takatori, NEC, Japan71

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FridayAMD11 - 1:
10:50

December 9
Invited 510-Kb SOG-DRAM for Frame-MemoryIntegrated Displays
H. Haga*,**, T. Otose*,**, Y. Nonaka*,**, D. Sasaki*,Y. Kamon*, Y. Kitagishi*,**, T. Matsuzaki*,**, Y. Sato*,
H. Asada*,***NEC, Japan**NEC LCD Tech., Japan

A System On Glass (SOG) Dynamic Random Access Memory (DRAM),
which enables the implementation of frame-memory-integrated displays,
has been developed. To reduce the layout area, a dynamic onetransistor-one-capacitor memory cell and a compression/decompression(CODEC) circuit were developed and implemented. A frame-memory
macro was created by combining the SOG-DRAM with an embedded
controller that enables independent access for writing and reading. Its
operation was verified by chip measurement and demonstration as aframe-memory operation of 262k-color QCIF+ displays.
AMD11 - 2
11:15

Reliable Integrated a-Si Scan Driver (RASD) for
2.47-in. VGA a-Si TFT-LCD
H.-R. Han, J.-F. Tsai, Y.-L. Jou, W.-T. Liao, W.-C. Wang
WINTEK, Taiwan

A 2.47”VGA (480×640) a-Si TFT-LCD panel with reliable integrated a-Si
scan driver (RASD) and novel pixel design is developed using astandard 5-mask BCE process. The RASD makes it possible to perform
an operation regardless of the fluctuation in the threshold voltage of a-Si
TFT after a long-term use. The novel pixel design raises the resolutionof the TFT-LCD panel up to 480 × RGB × 640 and raises the brightnessof the TFT-LCD panel up to 200 nits by maximizing the useful aperture.
AMD11 - 3
11:35

Integrated Gate Driver Circuit Using a-Si TFT
C. C. Wei, W. C. Lin, S. H. Lo, C. J. Chang, Y. E. Wu
AU Optronics, Taiwan

A reliable a-Si gate driver circuit is integrated on the glass substrate andfabricated by a standard TFT process. The circuit operation voltages,
optimized to balance the positive and negative AC stress, areindependent of the output voltages. The measurement results show thatthe output of the new shift register circuit degrades in a much slower
rate under long-term operation.
AMD11 - 4
11:55

7-in WVGA LTPS TFT LCDs Manufactured by PMOS
Process
C.-H. Lee, H.-Y. Lin, C.-M. Chiu, M. Kung
Toppoly OptoElect., Taiwan

A high performance 7-inch WVGA LTPS LCDs manufactured by PMOS
process was developed. The gate driver with 2-phase clocks and level
shifter were integrated on glass. The proposed driving scheme is very
similar to conventional CMOS panels. The same performance as CMOS
panels was achieved in reliability test and has acceptable power
consumption. Furthermore, the PMOS process also dramatically
improves the throughput in manufacturing due to less photo layers than
CMOS one.

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FridayDecember 9

AMD11 - 5L
12:15

High Resolution LTPS AMLCD with Integrated DACs
K. Hashimoto, K. Yamashita, F. Matsuki, H. Watsuda,
J. R. Ayres*, M. J. Edwards*
Philips Mobile Display Syss., Japan*Philips Res. Labs., UKA 257 dpi LTPS TFT LCD with integrated DACs for reduced system costis described. The architecture is based on a 2-stage resistor-capacitor
hybrid DAC that is well suited to high-resolution LTPS displays. We haveconfirmed that images with high uniformity can be achieved using thissource driver architecture.

----- Lunch -----

14:00 - 15:30

Sunport Hall Takamatsu Main Hall

AMD12: Organic TFT Technologies
Chair：
Co-Chair：Y. Inoue, NHK, Japan
M. Ikeda, Toshiba, Japan

AMD12 - 1:
14:00

Invited Organic Light Emitting TransistorFundamental Characteristics and Applications
C. Adachi
Chitose Inst. of Sci. & Tech., Japan

We succeeded in observing bright electroluminescence (EL) from 1wt%rubrene doped tetraphenylpyrene (TPPy) as an active layer in an
organic field-effect transistor (OFET) structure. We observed a maximum
EL quantum efficiency (ηext) of ~1 %. Our device configuration provides
novel organic light emitting diode structure where anode (source) andcathode (drain) electrodes are laterally arranged, giving us a chance tocontrol drain current by changing gate bias.
AMD12 - 2:
14:25

Invited Sheet Image Scanner with Organic Transistor
Integrated Circuits
T. Someya, T. Sakurai, T. Sekitani, H. Kawaguchi, Y. Kato,
S. IbaUniv. of Tokyo, JapanA sheet image scanner has been fabricated by integrating high-quality
organic transistors with organic photodetectors. Because the sheet
scanner requires no mechanical components, it is mechanically flexible,
light to transport, shock-resistant and potentially inexpensive tomanufacture.

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FridayAMD12 - 3
14:50

December 9
Flexible Liquid Crystal Display Panel Driven by Low
Voltage Operation Bottom-Contact Organic TFT
Y. Fujisaki, T. Suzuki, T. Arai, H. Ohtake, H. Maruyama,
H. Fujikake, Y. Inoue, S. Tokito, T. Kurita
NHK, Japan

An organic TFT (OTFT) -driven 16×16 polymer-dispersed liquid crystal(PDLC) display panel on a flexible plastic film has been developed. We
fabricated the low-voltage-operation OTFT with Ta2O5 gate insulator andbottom-contact structure, using a photolithography method at low
temperature. The OTFT showed a carrier mobility of 0.3 cm2/Vs, acurrent on/off ratio of over 105, a subthreshold slope of 0.3, and a low
operating drain voltage of -6V. We also successively confirmed display
operation of the fabricated 16×16 display panel.
AMD12 - 4
15:10

Organic Thin-Film Transistors Based on
Nanocomposite Gate Insulators for High-Current
Driving Applications
C.-S. Chuang, Y.-S. Lin, L.-J. Kung, D.-S. Chen,
F.-C. Chen, H.-P. ShiehNat. Chiao-Tung Univ., Taiwan

Highly performance organic thin-film transistors (OTFTs) incorporated
with nanoparticles in the dielectric insulators have been demonstrated.
The dielectric layers consist of cross-linked poly-4-vinylphenol (PVP)
and high dielectric titanium dioxide (TiO2) nanoparticles. In order toincrease the solubility of TiO2 nanoparticles in organic solutions, thesurface of nanoparticles was modified with organosilozane. Moreover,the concern of higher leakage current, while using the nano-composite
insulators, has been overcome by P8 treatment. In addition, several
models, which have been used to describe the dielectric behavior ofcomposite materials, are also discussed.
Author Interviews
17:10 - 18:10

Supporting Organizations:Chemistry and LC Material Forum, JLCSLC Physics and Condensed Matter Forum, JLCS
Liquid Crystal Display Forum, JLCSTechnical Group on Information Displays, ITE
Technical Committee on Electronic Information Displays, Electronics
Society, IEICE
Technical Committee on Electron Devices, Electronics Society, IEICE
Technical Committee on Silicon Devices and Materials, IEICE

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Tuesday

December 6

Workshop on FPD Manufacturing,
Materials and Components
Tuesday, December 6
13:30 - 14:50

ANA Hotel Clement Takamatsu Hiten 1

FMC1: Manufacturing Technologies (1)Chair：
Co-Chair：K. Sarma, Honeywell, USA
Y. Ukai, Sony, Japan

FMC1 - 1:
13:30

Invited Rapid Thermal Annealing Technique Using
Thermal Plasma Jet and Its Application to Thin Film
Transistor Fabrication
S. Higashi
Hiroshima Univ., JapanThe temperature profile in the substrate during the thermal plasma jet
irradiation has been investigated by an optical probe analysis. The
surface temperature increased from 960 to 1,781 K by decreasing the
gap between the plasma source and the substrate surface andincreasing the Ar gas flow rate. Application of the annealing technique tocrystallization of amorphous Si films and fabrication of high-performancethin-film transistor with the field effect mobility of 62 cm2V-1s-1 andthreshold voltage of 3.4 V is demonstrated.
FMC1 - 2:
13:50

Invited Rapid Recrystallization of Amorphous Silicon
Utilizing Microplasma Jet at Atmospheric Pressure
H. Shirai, Y. Sakurai, M. Yeo, T. Kobayashi*, H. Hasegawa
Saitama Univ., Japan*Inst. of Physics & Chem. Res., JapanThe rapid recrystallization of amorphous silicon and its related materials,
i. e., a-Si (P, B), a-SiGe and a-SiOH utilizing the RF plasma jet of argon
at atmospheric pressure is presented. In addition to the rapid recrystallization of a-Si, the enhanced activation of P and B impurities has beenrealized by optimizing the stage velocity and flow rate of argon. The
effects of the guest element, P, B, O,and Ge on the rapid
recrystallization of a-Si by the plasma annealing are demonstrated.
FMC1 - 3
14:10

Application of Induction Heater to FPD Production
Equipment
Y. Ozaki, K. Shimamura, N. Sagawa
Mitsui Eng. & Shipbuilding, Japan

We have developed the anneal system for FPD with a new verticalstructure making the best use of the feature of Zone Control Induction
Heating (ZCIH). It has been proven that this system can provide not only
a substrate heating with high quality, i. e., a rapid temperature transition
speed, a splendid temperature uniformity and a substrate damage
control characteristic in the high temperature heat-treatment process,but also 1.3 times faster throughput compared with the conventionalmodel.

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Tuesday

December 6

FMC1 - 4
14:30

High Current Ion Implanter iG4 with Long Pole Gap
Sector Magnet for FPD Manufacturing
Y. Inouchi, S. Dohi, Y. Matsuda, M. Konishi, J. Tatemichi,
M. Nukayama, K. Nakao, K. Orihira, Y. Andoh
Nissin Ion Equipment, Japan

A mass analyzing high current ion implanter (called Ion Doping iG4) for
FPD manufacturing was developed. In this system, the ion source has
been developed to obtain higher current density ion beam for better
performance on Source/Drain implantation. As the results, 300μA/cm for
Boron ion beams and 400μA/cm for phosphorous ion beams wereobtained.

----- Break -----

15:10 - 16:30

ANA Hotel Clement Takamatsu Hiten 1

FMC2: Manufacturing Technologies (2)Chair：
Co-Chair：T.Miyashita, Tohoku Univ., Japan
T. Itoh, Corning Japan, Japan

FMC2 - 1
15:10

Withdrawn

FMC2 - 2
15:30

Applying Inkjet Technology to PI Alignment-Film
Printing Conducted in LCD Panel Manufacturing
F. L. Hsu, K. H. Chen, P. Y. Liu, K. W. Wang, H. A. Li,
S. Oliver, S. T. Yang
Chunghwa Picture Tubes, Taiwan

By referring to the drawback of Roller-to-Roller process, only 1~10
percent of polyimide material is effectively utilized. On the contrary, theeffectively employed polyimide in inkjet printing process could achieve
70~95 percent usage. Inkjet technology has been a rising candidate
offering the advantages of effective material usage, film thickness
uniformity and switching panels with different specifications easily in
manufacturing process. CPT has introduced the PI inkjet machinery inalignment-film printing, and successfully conducted PI alignment-film
printing in demonstrating the exhibits of 7-inch and 20.1-inch panels.
FMC2 - 3
15:50

Novel, Highly Reliable and Accurate Inkjet Print Headfor Manufacturing Flat Panel Displays
J. Attard
Xaar Plc, UK

Xaar presents its 3rd generation, inkjet print head, “side shooter”
technology. Also incorporating Xaar’s unique greyscale technology, theside shooter is designed to meet manufacturing process specifications
on reliability, lifetime, drop volume and drop placement accuracy in a
number of process steps, including polyimide coating, color filter
deposition, and P-OEL deposition. The concept, technology roadmap
and initial test results will be presented.

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Tuesday

December 6

FMC2 - 4:
16:10

Invited Evaluation of the Performance of an Ion
Beam Using the Planner Distribution of a Twist
Angle
A. Asahara, A. Horibe, H. Kimura, J. Nakagaki,
T. Nishiwaki, H. Tokushige, T. Yamada, H. Kitahara,
Y. Shiota
IBM Japan, JapanA new scale, “twist angle”, for estimation of the quality of an ion beam is
proposed. The twist angle reflects the orientation of molecules in the
resulting aligned layer. We found that the LCD panel quality is wellcorrelated with the planar uniformity of twist angles. Using twist angle,
we can evaluate the quality of ion beams without making product-level
LCD panels.

----- Break -----

16:55 - 18:05

ANA Hotel Clement Takamatsu Hiten 1

FMC3: Manufacturing Technologies (3)Chair：
Co-Chair：

C.-C. Huang, Photon Dynamics, USA
T. Unate, Sekisui Chem., Japan

FMC3 - 1
16:50

Withdrawn

FMC3 - 4L
16:55

Advances in Jet Dispensing for Flat Panel
Applications
T. Ratledge, L. Fang, F. Suriawidjaja
Asymtek, USA

As the demand for OLEDs increases, manufacturers are investigating
methods to improve the speed and quality of the production process.
One process step, the dispensing of UV seals on glass substrates, canbe significantly improved with the utilization of jet dispensing. This paper
describes the recent improvements of this technology and its benefits
for applying UV seals.
FMC3 - 2
17:10

A New Method for Accurate Measurement of Display
Flicker and Response Time
D. Glinel, V. Gibour, P. Boher, T. Leroux
ELDIM, France

We present a new system for accurate measurement of display flicker
and response time based on an optical probe, an imaging CMOS
sensor, a photo multiplier tube and a dedicated electronics. We showthat the 14 bits converter provides a real 80db signal/noise ratio. We
demonstrate that the response time repeatability is better than 0.1% andthe accuracy better than 1%. A new method of signal treatment isapplied for inter-gray level measurements where the signal variation is
low to improve the accuracy.

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Tue./Wed.
FMC3 - 3
17:30

December 6/7
Using Finite Element Methods to Simulate the Mura
Phenomena Caused by the Thermal Deformation ofFilm Materials in the LCD Module
C. R. Ou**,*, R. Her*, R. Tzeng*, C. H. Chen*, C. Y. Lin****LEXM Res., Taiwan**Hsiuping Inst. of Tech., Taiwan***CADMEN, Taiwan

In this article, we will discuss about the Mura phenomena caused by thethermal deformation of the thin film. Both FEM and analytical solutions
is discussed for such phenomena. Although analytical solution is not anexact solution, it is found to be a more practical tool to explore thewrinkling of the film materials than the FEM for Mura analysis.
FMC3 - 5L
17:50

Latest Focus, Magnification Control & Alignment
Improvements of HMA 500 for Printing Future ”
SOG’s”
A. R. Nobari, S. Mourgue, F. Clube, M. Jorda, C. Iriguchi*,
S. Inoue*, E. Grass**, H. Mayer**
Holtronic Technologies, Switzerland*Seiko Epson, Japan**Microfab AG, Liechtenstein

The emerging systems on Glass (“SOG”’s) based on LTPS or yet
crystal-Silicon (c-Si) critically require not only very-high resolution
lithography, as a patterning capability but also congruent capabilities oflayer-to-layer alignment whilst being capable to overcome andcompensate the process induced magnifications. We report the latest
improved results of 1.2μm at 0.5μm resolution for depth of focus andalignment of 0.19μm 3σ both axis with magnification control on a HMA
500. At 3 μm resolution, the DoF is 30 μm.
Author Interviews
18:20 - 19:20

Wednesday, December 7
9:00 - 10:00

ANA Hotel Clement Takamatsu Hiten 1

FMC4: Color Filters (1)Chair：
Co-Chair：

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Wednesday
FMC4 - 1
9:00

December 7
Novel Convexity Pattern for Spacer or Bank on
Plastic Substrate by Transfer Technique
A. Yasuda, T. Furukawa
Kyodo Printing, Japan

We have developed a novel convexity pattern used as spacer or bankfor display device using a plastic substrate. This pattern can be formedin accurate position on a plastic substrate by transfer technique andhave constant thickness and flat surface. Our transfer technique is also
useful to form convexity pattern in addition to transparent electrode andcolor filter on a plastic substrate.
FMC4 - 2
9:20

Introduction of Micro Coating Repair Method for
LCD Color Filter
Y. Takagi
NTN, JapanNTN has developed a repair system for LCD color filter applications.
This system uses specially designed needles. Pico-litter level color resist
was adhered to the surface area of the needle tip to coat on the “white
defect” which generated in the manufacturing process of the color filter.
This report contains an outline of equipment and relation between
needle shape and the amount of coated color resist.
FMC4 - 3
9:40

A Novel LCD Color Filter Repair Machine with Fully
Dry Process
T. Ishikawa, H. Miyai, T. Yamazaki, H. Seki, H. Kusunose,
H. Yoshimoto*
Lasertec, Japan*Fuji Photo Film, Japan

Lasertec has developed a new LCD color filter repair system (productname:CR), which has a new color repair function in addition to fourconventional repair functions, height measurement, tape grinding repair,pulse laser shot and color microscope. The new color repair function
was developed jointly with Fuji Photo Film, Co., Ltd. and a coloreddryfilm is used as a repair material. CR machine is based on a fully dry
color repair process, which increases the productivity of color filter
manufacturing.

----- Break ----10:40 - 12:00

ANA Hotel Clement Takamatsu Hiten 1

FMC5: Color Filters (2)Chair：
Co-Chair：

C. H. Chen, ITRI, Taiwan
T. Taguchi, Toppan Printing, Japan79

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Wednesday
FMC5 - 1
10:40

December 7High Contrast Color Filter for LCD-TV
K. Minato, T. Itoi, H. Ito
Toppan Printing, JapanA new high contrast color filter (CF) for LCD-TV, of which the contrast
ratio is 1.8 times higher than that of the conventional CF, has beendeveloped by using the advanced pigment-dispersed color resist duringa photolithography process. Consequently, the light leakage at the black
image-displaying time in LCDs can be reduced. Furthermore, LCD-TV
which suppresses tinting at the black image can be supplied bycontrolling the balance of contrast ratios in RGB segments.
FMC5 - 2
11:00

Development of Color Filter Processes on Plastic
Substrate
C. H. Chen, K. H. Liu, Y. A. Sha, L. P. Hsin, H. L. Wang,
J. M. Ding, K. H. Chang, S. S. Liu, C. C. Liao, J. W. Shiu
Ind. Tech. Res. Inst., Taiwan

A 4.1-inch QVGA color filter using plastic substrate has been developed
using pigment dispersion color resists and photolithography method. Inorder to improve the accuracy of superposition between different color
layers, dimension and position of each pattern over entire plastic
substrate must be controlled rigorously. The processes are optimized bytuning annealing condition, tact time from the end of pre-bake step tothe start of exposing step, and post-bake condition. The performances offlexible color filters are reported.
FMC5 - 3
11:20

Properties of Column-Spacers on a Flexible Color
Filter Using a Roll-to-Roll Process
A. Sonehara, T. Eguchi, A. Sugizaki, T. Takahashi*, T. Ito**,A. Kumano***TRADIM, Japan*Dai Nippon Printing, Japan**Sumitomo Bakelite, Japan***JSR, Japan

We were the first to develop column spacers (CS) using a roll-to-rollprocess for a flexible plastic substrate and demonstrated a prototype of
LCD. The purpose of this paper is to obtain a stable cell gap of plastic
LCD by disposing the CS. We derived the optimum condition for CS
properties. As a result, the cell gap of the LCD was precisely maintained
as well as that of conventional glass plates, and resulted in uniform
luminance of the display.
FMC5 - 4
11:40

Investigation of Cell Gap Defects Using Gap
Simulation
S. Ichikawa, K. Suekuni, M. Ishimaru, H. Nakatani,
T. Unate, A. Nakasuga
Sekisui Chem., Japan

Large LCD panels have some cell gap problems. For example, gravity
defects are observed as thicker cell gap area of bottom of LCD panel athigh temperature. Cold bubble defects are observed as bubbles in LCD
panel at low temperature. We have developed a gap simulation method
to investigate these problems. The calculation was made for bothcolumn spacer and ball spacer. It was shown that gap defects can besubstantially reduced by using ball spacer.
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Wed./Thu.

December 7/8

Author Interviews
17:30 - 18:30

Thursday, December 8
9:00 - 10:20

ANA Hotel Clement Takamatsu Hiten 1

FMC6: Environment Friendly Technologies &Backlight Systems (1)Chair：
Co-Chair：Y. Iimura, Tokyo Univ. of A & T, JapanK. Niwa, JSR, Japan

FMC6 - 1
9:00

Recycling of Liquid Crystal Recovered from TFT-LCD
H. Hasebe, K. Takeuchi, H. Takatsu
Dainippon Ink & Chems., JapanThe recycling of liquid crystals recovered from TFT-LCD panels has
been studied. The liquid crystals were extracted from smashed waste
LCD panels by washing with an organic solvent and were purified torecover Voltage Holding Ratio (VHR) as high as new liquid crystals. By
optimizing purification processes, 99.2% of VHR has been achieved.
Compensation of physical properties of the liquid crystals is also
discussed.
FMC6 - 2
9:20

Environment and Safety Activities of the Japanese
LCD Association
S. Masui, M. Shiota*, K. Matsumura**, H. Kurokawa***,H. Nishida****, Y. Suzuki*****
Sharp, Japan*JEITA, Japan**Toshiba Matsushita Display Tech., Japan***Hitachi, Japan****Hitachi Displays, Japan*****NEC LCD Tech., JapanThe Japanese LCD association has been coping with environment andsafety issues from the beginning of the business. The display device
environment and safety committee has four working groups (WGs). The
PFC WG helped to found an international committee together withcounterparts in Korea and Taiwan in 2001, and it has been making
efforts to reduce PFCs emitted from LCD manufacturing facilities.
Recently the recycling WG has focused on recycling waste LCD TVs.

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ThursdayDecember 8

FMC6 - 3
9:40

Comparative Study on Sinusoidal and Square Wave
Driving Methods of EEFL (External Electrode
Fluorescent Lamp) for LCD TV Backlight
Y. J. Lee, W. S. Oh, S. S. Lee, K. M. Cho, G. W. Moon,
M. S. Park*, S. G. Lee*, M. G. Kim*
KAIST, Korea*Samsung Elect., Korea

EEFL is mostly driven by sinusoidal wave driving method. In thesinusoidal wave driving method, a transformer should be used in the
inverter since the high voltage should be applied across the EEFL toturn on. As the transformer is removed, a square wave is applied directly
to the both ends of EEFL by a cascaded three-stage inverter. And In thecase of square wave, the high luminance and light efficiency have beenachieved.
FMC6 - 4
10:00

CCFL Inverter Circuit with a Ballast at Primary Side
H. Shinmen, R. Weger*
Minebea, Japan*NMB-Minebea GmbH, Germany

This paper presents a new inverter circuit for driving multiple CCFL-lamp
displays e.g. LCD-TV screens. The new inverter makes use of atransformer chain with in series connected primary windings. This
electrically equals a virtual series connection of all CCFL lamps
resulting in excellent current uniformity in all lamps and hence excellent
brightness uniformity of the display. The paper explains the basic circuit
operation and gives experimental results of the achieved current
balancing.

----- Break ----10:40 - 12:00

ANA Hotel Clement Takamatsu Hiten 1

FMC7: Backlight Systems (2)Chair：
Co-Chair：A. A. S. Sluyterman, Philips Lighting, The Netherlands
M. Takagi, Harrison Toshiba Lighting, Japan

FMC7 - 1:
10:40

Invited What Is Needed in LCD Panels to Achieve
CRT Like Motion Portrayal
A. A. S. Sluyterman
Philips Lighting, The Netherlands

In LCD panels, motion portrayal as well as panel addressing speed andresponse time are critical. They need to be balanced carefully, inparticular for HDTV. It will be shown which combination of technologies,
like response-time improvement, black insertion, double frame rate andscanning backlight, can achieve CRT-like motion portrayal, without
demanding extreme response speeds from the panel.

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Thursday
FMC7 - 2
11:00

December 8
Spatio-Temporal Scanning LED Backlight for Large
Size Field Sequential Color LCD
K. Sekiya, T. Kishimoto, K. Wako, S. Nakano, H. Ishigami,
K. Kalantar*, K. Shimabukuro*, D. Kunioka*,
T. Miyashita**, T. Uchida**
Aomori Pref. CREATE, JST, Japan*Nippon Leiz, Japan**Tohoku Univ., Japan

Emerging problems related to backlights for large size field sequential
color (FSC) LCDs are identified. A partitioned blockwise backlight isrequired and the control of light leakage over the partitions is foundcritical. If a high-definition FSC LCD is realized with dual scan (divided
screen), change in the sequence of color fields is required. A 36.9 cmdiagonal spatio-temporally scanning backlight utilizing RGB LEDs isdeveloped in combination with an OCB-mode FSC LCD and thediscussion is verified on it.
FMC7 - 3
11:20

The High Efficiency and Long Life Span Plasma Flat
Fluorescence Lamp Equipped with Innovative Dual
Driving Waveforms
C. C. Ting, Y. H. Hsieh, J. S. Chen, T. L. Chin, C. L. Lin,W. Y. Lo, J. Y. Zhang, H. P. Chong, W. Y. Tseng, S. J. Jeng,
C. J. Chang, C. C. Chieu, J. N. Chen, H. W. Wu,
X. H. Tseng, S. C. Lee, T. C. Lu, C. J. Yang, S. C. Wu,
H. Y. Chou, S. H. Huang, C. H. Ai, X. R. Lin, O. Sun
Chungwha Picture Tubes, Taiwan

The plasma flat fluorescence lamp equipped with innovative dual driving
waveforms had been successfully fabricated. Because of the specificdriving waveform, the PFFL can entirely and homogeneously illuminate
without any dark area, which results in high luminance efficiency andlong life span of backlight unit.
FMC7 - 4
11:40

Enhanced Luminescent Efficiency of Backlight’s
Blue Phosphor by Microwave Irradiation
C. C. Ting*, S. P. Lee, K. T. Kuo, S. Y. Chen, Y. H. Hsieh*,
S. J. Jeng*, O. Sun*
Nat. Chiao-Tung Univ., Taiwan*Chungwha Picture Tubes, Taiwan

Highly luminescent efficiency blue-light phosphors BaMgAl10O17:Eu2+
have been successfully produced by microwave irradiation treatment.
The SEM images and XRD analysis reveal that the particle morphologyof the blue-light phosphors can be notably modified from sheet-like tospherical shape by microwave irradiation and better crystallinity can beobtained. In addition, the vacuum ultraviolet (VUV) PL spectra showsthat the microwave irradiation treatment can effectively enhance theluminescent efficiency by a factor of 2.5 for intensity in comparison withthat without microwave treatment.

----- Lunch -----

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ThursdayDecember 8

13:40 - 15:00

ANA Hotel Clement Takamatsu Hiten 1

FMC8: Backlight Systems (3)Chair：
Co-Chair：K. Kalantar, Nippon Leiz, Japan
H. S. Lee, Samsung Advanced Inst. of Tech., Korea

FMC8 - 1:
13:40

Invited Highly Light Collimating Unit for Realizationof Mosaic Structure Large Size RGB Backlight
K. Kalantar
Nippon Leiz, JapanFor realizing a large-scale LCD backlight, a unit with three stacked
functional light-guides has been developed. The unit transforms
azimuthal light distribution of an LED to an intensive collimated lightthrough a circular prism sheet. The unit has an optical efficiency of 78%
and a thickness of 7mm.
FMC8 - 2
14:00

Diffusive-Sheetless Backlight System for Mobile
Phone
M. Yoshida, A. Funamoto, K. Sakurai, Y. Kawabata,
M. Ohira, S. Aoyama
OMRON, JapanThe conventional backlight system has required a diffusive sheet andprism sheets to improve the uniformity and the brightness of the lightemitted from a lightguide respectively. The integration of functions given
from these sheets onto a lightguide was realized and the reduction of
the thickness of the backlight system by 20% has been achieved. In thispaper, the integration of diffusive sheet’s function by the design ofprisms’ random arrangement with the prism size control is presented
mainly.
FMC8 - 3
14:20

Improvement of Color Dispersion in Holographic
Back-Light Units Using Beat Patterns
H.-S. Lee, S. M. Lee, J. S. Choi, J. H. Min, K. Y. Kim,
Y. S. Choi, J. H. Yu, J. H. Kim, H. Y. Choi
Samsung Advanced Inst. of Tech., Korea

We introduce beat patterns to a holographic back-light unit (HBLU) to
improve color dispersion characteristics. HBLU has a color dispersion
problem that comes from the nature of grating structures. The beatpattern structure for minimizing color dispersion is optimized using kspace method and the finite difference time domain (FDTD) simulation.
The optimum structure is fabricated and evaluated. The experimental
result shows that the △x＊△y value of a proposed beat pattern HBLU in1931 CIE chromaticity diagram reduces to 37% compared to a singleperiod model.

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Thursday
FMC8 - 4
14:40

December 8
A Novel Backlight System with the Unified
Component
A. Nagasawa, T. Eguchi, Y. Sanai*, K. Fujisawa**
TRADIM, Japan*Toagosei, Japan**Kuraray, Japan

We have developed a single component backlight system that iscomposed of the unified optical-patterned film and light guide. In thissystem, a reflector, a diffuser, and prism sheets are unnecessary unlike
conventional backlight systems. The optical-patterned film consists of aphoto-curable resin with the well-defined light-diffusive micro particles.
We will report the features of our backlight system using the opticalpatterned film with the light-diffusibility.
Author Interviews
17:30 - 18:30

15:00 - 17:00

Citizen’s Gallery

Poster FMCp: FPD Manufacturing, Materials &Components
FMCp - 1

NTSC Variation with Operation Temperature in LCDLEDBL System
T.-L. Chiu*,**, C.-C. Ting*, W.-Y. Lo*, W.-Y. Tseng*,
C.-C. Chieu*, C.-J. Chang*, O. Sun*
*Chungwha Picture Tubes, Taiwan**Nat. Taiwan Univ., Taiwan

The LED light source recently is attracted a lot of interests and has
many excellent reliable advantages for LCD backlight module
application. Nevertheless, the rising operational temperature of LED
backlight module influence significantly the characteristics of LED chips,
such as decreasing LEDs’ output light intensity and drifting its dominant
wavelength, etc. These factors make display’s color temperature change
and induce different NTSC results. Here, we perform an important
relation between NTSC and the above two factors of LED-LCD display.
FMCp - 2

The Influence of Poly-Si Morphology with Excimer
Laser Optics System
Y. Peng, C. N. Chen
Chunghwa Picture Tubes, Taiwan

In this study, we investigate the characteristic of the poly-Si grain andmorphology influenced by XeCl excimer laser system. The stable laser
beam source is basic requested; the irradiation beam through opticallens module is more important which limit the grain size smaller than
0.5 μm. The homogenization lens designs control the poly-Si grain size;
so we hardly get enlarge grain size by one laser irradiation scan.

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ThursdayDecember 8

FMCp - 3

A Study of Full Wavelength Spectroscopy-Integrated
Dry Etching System
T.-C. Tsai
Ind. Tech. Res. Inst., Taiwan

End point detection (EPD) technology has applied to auto-stop of dry
etching and is gratifying with its sensitive process control. In this paper,
we build an end point detector-based dry etching system, which
integrates a full wavelength optical spectroscopy and an emission
recorder. It was also verified by practical experiments that the new dry
etcher was enough to detect stop timing without post-etch residue
during the whole etch procedure and reached high reproducibility of the
EPD signal profile for the same etched material.
FMCp - 4

The Quality Improvement of ITO Deposition by DOE
and SPC for FPD Fields
J. C. Liao, T. C. Tsai, M. W. Chang
Ind. Tech. Res. Inst., Taiwan

To control the quality of deposition of indium-tin oxide (ITO) is so hardsince its complex reaction. This study aims to improve the quality of ITO
film by design of experiment (DOE) and then to monitor the quality
trends with statistical process control (SPC). According this quality
control cycle, the quality indexes of ITO film in thickness, resistivity anduniformity were greatly promoted from unqualified situation of ITO
formation.
FMCp - 5

Study on an Ion Beam Alignment System for Liquid
Crystal Displays
T. Matsumoto, T. Sato*, N. Nakamura, Y. Matsuda,
Y. Andoh, Y. Iimura*Nissin Ion Equipment, Japan*Tokyo Univ. of A&T, Japan

We have developed an ion beam alignment system for a liquid crystal(LC) alignment process, which features its large ion beam size of 800
mm width. The ion beam exhibited an excellent uniformity, repeatability,
stability, and a small divergence angle. The twisted nematic cells with
ion-treated polyimide films showed a well-aligned LC texture. These
indicate that this ion beam system is suitable for the application to a LC
alignment process, especially when the LC panel size becomes larger.
FMCp - 6

Performance of a RTA System for LTPS TFTs
M. Morita, K. Hashimoto, M. Mizuno, T. Ishihara,
Y. Kawasaki
Ishikawajima Harima Heavy Ind., JapanThe new high-speed annealing system for low-temperature poly silicone
TFT was developed. This system offers high-speed temperature rising,glass cooling, and the good temperature uniformity in annealing. Thissystem is applicable to activation of TFT, SPC of poly silicone, and precompression processing of a substrate etc.

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ThursdayDecember 8

FMCp - 7

High Quality SiO2 Insulator for LTPS-TFTs Depositedin ALD/PECVD Reactor
N. Miyatake, Y. Mori, K. Murata, K. Shimamura, Y. Uraoka*,
T. Fuyuki*
Mitsui Eng. & Shipbuilding, Japan*Nara Inst. of Sci. & Tech., Japan

High quality gate insulator is a necessity to enhance performance of a
Low-Temperature-Poly-Silicon (LTPS) TFT. We propose an all-new
stacked gate insulator, which is prepared with the Atomic Layer
Deposition (ALD) technology for an interfacial layer, and the monopole
antenna Plasma Enhanced Chemical Vapor Deposition (PECVD)
technology for a secondary layer. We have developed the ALD/PECVD
reactor, which handles glass substrates of 370mm×470mm in size. The
prepared SiO2 film has excellent electrical property of an interface trap
density of 1×1011cm-2eV-1.
FMCp - 8

Application of ACX (Al-C-Ni) Alloys with Low
Resistivity for Single Gate Layer
D. L. Choi, J. I. Ryu, S. W. Kim, W. S. Kim, W. B. Lee,J. Y. Lee
BOE TFT-LCD SBU, Korea

The possibility of application of ACX (Al-C-Ni) single metal with low
resistivity for gate layer was investigated. Contact resistivity between
ACX and ITO which mentioned major problem of Al-based alloy was
improved by several treatments, and etch profile was also improved. The
transfer property of ACX gate TFT was as good as TFT with Mo/Al/Mo
three layers. Finally, 14”-based XGA module was manufactured and will
be displayed during IDW/AD ’05.
FMCp - 9

Improvement of Physical Properties of Indium Tin
Oxide (ITO) Nanoparticle for Flexible Display Using
Gas Evaporation Synthetic Method
S.-J. Hong, S.-G. Chang*, J.-I. Han
Korea Elect. Tech. Inst., Korea*Epixon, Korea

Highly dense ITO target enhances characteristics of ITO thin film forflexible display at low temperature, and the high density can beachieved by applying nano-sized ITO particle. In this work, physicalproperties of ITO nanoparticle were attempted to improve applying gas
evaporation method. As a result, high quality ITO nanoparticle withuniform particle size of 5 nm, surface area of 108 m2/g, (222) preferredcubic structure, and 91% In - 9% Sn was achieved by the gas
evaporation method.

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ThursdayDecember 8

FMCp - 10

High Reliability Alignment Material for Active Matrix
LCD Fabricated at Low Temperature Bake Processes
T. Hirai, A. Kumano*, S. Otsuki
TRADIM, Japan*JSR, JapanA new alignment material has been developed for Active Matrix Liquid
Crystal Display (AM-LCD) which was fabricated at low temperature bakeprocess. The liquid crystal cell used the alignment material exhibits highvoltage ratio, low residual DC voltage and high reliability. The alignment
material is suitable for high reliability plastic film based AM-LCD.
FMCp - 11

Formation and Characterization of High-Ordered
Self-Assembled Monolayers by a Novel
Chemisorption Method
N. Nakamoto, Y. Fujita, H. Takeda, K. Kumazawa,
M. Shimada, H. Suzuki, T. Hidaka
Nippon Soda, Japan

We have discovered a novel chemisorption method using octadecyltrimethoxysilane(ODMS), titanium alkoxide(TA), water, and toluene toform highly-ordered self-assembled monolayers(SAM)of ODMS. The
SAMs were formed rapidly from the active solution even when it was
kept for three months. The solution and layers were characterized byseveral methods. We propose a mechanism for the rapid formation of
the ODMS-SAM.
FMCp - 12

Withdrawn

FMCp - 13

The Study of Prism-Patterned Light Guide Plate for
Increase of Efficiency in Monitor Back Light Unit
M. S. Lee, D. S. Park, Y. S. Oh, S. Y. Kim, Y. J. Lim
BOE HYDIS Tech., Korea

We focused developing without prism sheet in BLU. We made prism
structures at the upper and the lower surface of LGP(17inch). Firstly, we
examined the possibility by using the optical simulation. Then we madereal sample by means of imprinting process at the raw LGP. Imprinting
method includes the process of curing resin by UV exposure. As aresult, we achieved brightness of 4984nits (at center) and uniformity of
70% in first sample, and 4673nits and 78.2% in second sample, without
prism sheets.
FMCp - 14

Optimization of TFT-LCD Light Source by Ray
Tracing and Thermo-Flow Application
H. M. Chen, H. W. Chang, M. H. Liu, W. Z. Cheng
InnoLux Display, Taiwan

Conceptually, lamp house structure modification and CCFL operation atsuitable temperature are two ways to enlarge brightness based ongeometry optical theory and CCFL property. A high brightness and low
temperature backlighting unit light source has been obtained by ray
tracing and thermo-flow application. The components of the lamp house
have been optimized enabling high luminance and low decay property.

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ThursdayDecember 8

FMCp - 15

A New CCFL Arrangement of TFT-LCDs for FullSurface Luminance Uniformity in Low Lamp Current
Driving Situation
Y.-C. Cheng, Y.-J. Hsu, M.-H. Liu, H.-M. Chen
InnoLux Display, Taiwan

We demonstrate a new CCFL arrangement method called SAM(Stagger Arrangement Method) for improving the panel uniformity when
low lamp-current driving. By introducing this technology, the uniformity
can be highly raised due to the luminance compensation effect between
two extremities of the CCFL. Both optical and thermal properties havebeen well analyzed. An experiment using 17 inch LCD module also
evidences our contention.
FMCp - 16

Improvement of Luminance Uniformity of DirectType LED Backlight
Y. Kim, J. Lee, S. Lim
Dankook Univ., Korea

The direct-type LED backlight can be designed to have the desired
uniformity. In this paper, it is demonstrated that the luminance uniformityof LED backlight can be improved by using several combinations ofreflector patterns placed in front of LED light sources and it was shownthat the 72.2% of luminance uniformity of the LED backlight withreflector patterns was obtained.
FMCp - 17

Equivalent Model and Statistical Analysis for the Ray
Tracing of Backlight Modeling
C. R. Ou*,**, C. H. Chen**, J. S. Fan****Hsiuping Inst. of Tech., Taiwan**LEXM Res., Taiwan***Nat. Chiao Tung Univ., Taiwan

This short communications discussed two methods to reduce thecomputational time for backlight unit (BLU) simulation. Several
equivalent models and the practical statistical analysis are proposed.
FMCp - 18

Optical Modeling and Simulation of a CholestericLiquid Crystal Polarizer
H. Pak*, K. I. Kim*, K. C. Yoon*,**, S. T. Kim*, J. C. Jung*,
H. D. Park*, J. R. Park****Samsung Fine Chems., Korea**KIST, Korea***Chosun Univ., Korea

Computational simulation of a cholesteric liquid crystal(CLC)polarizer
was excecuted using a numerical model based on Berreman’s 4×4
matrix approach. Explicit expressions of the 4×4 propagation matrices
for the constituent optical films of a CLC polarizer were presented. We
considered the light recycling processe by introducing empiricalparameters for the optical efficiency and the depolarization of a recycling
system. Numerical simulations for optical performances of a CLC
polarizer were performed, and the simulation results were comparedwith experimental ones.

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Thursday
FMCp - 19

December 8
A Roll to Roll Method for Production of an
Achromatic Circular Polarizer by the Use of PhotoAlignment
K. Maruyama, H. Hayashi, Y. Ono, A. Nozaki, Y. Suzuki*,
S. Naitoh**, T. Ikariya
TRADIM, Japan*Dainippon Ink & Chems., Japan**Sumitomo Chem., Japan

We produced a roll of an achromatic circular polarizer by the use ofphoto-alignment. It consists of a half wave plate, a quarter wave plate
and a linear polarizer, which were coated and laminated at angles witheach other in a roll to roll process. The method can enhance efficiency
in manufacturing an achromatic circular polarizer and give it in a roll tobe applicable to a continuous manufacturing process of a plastic LCD.
FMCp - 20

Determination of Optical Constants for CholestericLiquid Crystal Films Using Transmittance andReflectance Spectra
H. Pak*, K. I. Kim*, K. C. Yoon*,**, S. T. Kim*, J. C. Jung*,
H. D. Park*, J. R. Park****Samsung Fine Chems., Korea**KAIST, Korea***Chosun Univ., Korea

Optical constants for cholesteric liquid crystal (CLC) films were obtainedby fitting theoretical spectra of transmittance and reflectance withmeasured ones. Calculation of theoretical spectra was executed using
Berreman’s 4×4 matrix approach. We applied the curve-fitting method tothree CLC samples with different reflection bands and compared thefitted results for refractive indices with measured ones for a parallelaligned LC sample.
FMCp - 21L

Improvement of Adhesion Between Color Filter
Resin BM Matrix and Glass
S. H. Chen, J. Tsai, A. Chang, W. Wang, C. M. Wu
Allied Material Tech., Taiwan

Resin BM material has been applied to color filter for black matrix layer.
Because of the different material characteristics between heavy metal Cr
and organic polymer resin, the interface adhesion should be improvedby ways of chemiacl bonding, surface cleanliness...etc. Backside
exposure is one of effective ways to enhance adhesion of resin BM andglass, CF makers must continue to cooperate with photoresist developer
to improve interface adhesion for high quality TFT LCD panels.

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Thu./Fri.
FMCp - 22L

December 8/9
Development of Conductive Elastic Ball for Fine
Pitch Interconnection
S. J. Hong, M. J. Lee, J. H. Choi, C. J. Lee, W. G. Kim,
G. W. Jeong*, J. I. Han
Korea Elect. Tech. Inst., Korea*Jeong Eui Ind, Korea

In this work, micro-sized conductive elastic ball was successfully
fabricated for fine pitch interconnection. First, 2.8 μm sized ball withsmall deviation of 10% was successfully synthesized. Its deformationshows elastic behavior between 31 and 39%. Also, electricallyconductive layer of Au / Ni was successfully fabricated byelectrolessplating. The plated layer shows good adhesion with thesurface of the organic ball. So, elastic micro ball could be fabricated forfine pitch interconnection.
FMCp - 23L

Newly Developed Surface Film Suitable for FPD-TV
K. Mikami, Y. Iwata, Y. Nishimura, N. Nakamura
Dai Nippon Printing, JapanWe developed the surface film (DS2) of a new category for LCD-TV. It
has the power of image clarity of a glare film and also has a function ofanti-glare with minimum white-muddiness. Additionally, it has highhardness and is suitable for high-resolution panels.
FMCp - 24L

Trichromatic LED Backlight for Mobile LCDs
J.-H. Kim, M.-Y. Park, J.-J. Kim, H.-D. Kim, J.-H. Jun,
J.-H. Park, S.-M. Cho, D.-W. Lee, H.-S. Jeong
Samsung Electro-Mechanics, Korea

We demonstrated a RGB LED backlight unit (BLU) for a 2.2 inch TFT
LCD. The color gamut of the LC panel was enhanced from 39% to 73%
when the conventional white LED BLU was replaced by the RGB LED
BLU. Panel transmittance and contrast ratio were enhanced as well. The
ambient temperature change was found to be the most significant causeof the color shift of the RGB LED backlight.

Friday, December 9
9:00 - 10:20

ANA Hotel Clement Takamatsu Hiten 1

FMC9: Materials (1)Chair：
Co-Chair：

A. Kyrlidis, Cabot, USA
H. Saito, Chisso, Japan91

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FridayFMC9 - 1:
9:00

December 9
Invited Highly Polarized Polymer LED with a Dichroic
Ratio More than 30!
M. Misaki*,**, S. Nagamatsu*, M. Chikamatsu*,
Y. Yoshida*, R. Azumi*, N. Tanigaki*, Y. Ueda**, K. Yase**AIST, Japan**Kobe Univ., Japan

Highly oriented polyfluorene thin film was fabricated by using a frictiontransfer technique to estimate the anisotropic features in molecularorientation and optical properties . It was found that theelectroluminescence from this device was really polarized with the ratioof more than 30.
FMC9 - 2
9:20

Modified Carbon Black for Black Matrix Applications
A. Kyrlidis, K. Xiong, S. Sullivan, E. Step
Cabot, USA

Resin black matrices containing carbon black are being adopted toreplace conventional chromium-based films in the color filters of liquid
crystal flat panel displays. The filled film must have very high opticaldensity and electrical properties beyond what is possible withconventional carbon black particles. Cabot has developed novel surface
modified carbon blacks for black matrix films that provide enhanced
dispersion characteristics and unique optical and tunable electricalproperties.
FMC9 - 3
9:40

The Effect of Adding Compatibilizer into OCL
Materials for TFT Panel to Prevent the RoughSurface after Post-Baking Process
S. Takahashi*,***, Y. Zhang*, K. Mochida**, T. Ogata***,S. Kurihara****AZ Elect. Marerials, Japan**Kyushu Univ., Japan***Kumamoto Univ., Japan

Over coating Layer (OCL) materials are applied as over coating layer for
TFT panels. When acrylic copolymer and epoxy compound are used for
OCL materials, post baking process causes the rough surface of OCL
film. Authors studied the mechanism of the rough surface phenomena,and found that the formation of the rough surface is closely related tomicrophase separation in the OCL film. Moreover some carboxylic acids
with long alkyl chain were found to act as the compatibilizer in OCL film
for preventing the microphase separation at post-baking process.

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FridayFMC9 - 4
10:00

December 9
The Photolithographic and Electric Properties of
Photosensitive Insulating Materials as a Passivation
Layer on TFT LCDs
S. Nakamura, K. Azuma, Y. Kusaka, T. Unate, A. Nakasuga,
K. Matsukawa*, S. Murakami**, K. Ohkura***,T. Kikkawa***
Sekisui Chem., Japan*Osaka Municipal Tech. Res. Inst., Japan**Tech. Res. Inst. of Osaka Pref.
***Hiroshima Univ., Japan

Novel photosensitive insulating materials comprised of organic
silsesquioxane (OSQ) have been developed. The OSQ showed highphotosensitivity, insulating performance, transparency, and heat
resistance required as a passivation layer on TFT LCDs. We examinedfeatures on the photolithographic and electric properties. The higher
photosensitivity and resolution were obtained by the improvement of thematerial composition of OSQ. And we discussed the further evaluationof the Vg-Id and Vds-Id characteristics on TFT devices.

----- Break -----

10:40 - 11:40

ANA Hotel Clement Takamatsu Hiten 1

FMC10: Materials (2)Chair：
Co-Chair：C.-F. Huang, Tatung Univ., Taiwan
T. Nagahara, AZ Chemical, Japan

FMC10 - 1
10:40

Development of Fine Pattern Formation Process
Using Silver Alloy Nano-Particles
I. Okada, K. Shimoda, K. Miyazaki
Sumitomo Elec. Ind., JapanWe developed the fine pattern formation process with silver alloy nanoparticles synthesized by the electro-chemical reaction. Nano-particles
dispersed ink was coated on the glass substrate, and then sintered,
metallic thin film was obtained. By the etching after photolithography
process, we made fine pattern of line width 10μm or less with low
resistance 3μΩ·cm or less. This method does not need vacuum system,
therefore it can be expected to reduce production cost.

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FridayDecember 9

FMC10 - 2
11:00

A Transparent Antenna Printed on a Display for
Portable DTV Reception
C.-F. Huang, S.-C. Chen*, C.-N. Mo**, C.-L. Liu**
Tatung Univ., Taiwan*Central Res. Tech., Taiwan**Chunghwa Picture Tubes, Taiwan

Based on the technology previously developed for transparent antenna,
this paper is to design a POD (Printed-On-Display) antenna operating in
the UHF band for digital TV (DTV) reception. Design is assisted bycomputer simulation which employs the full-wave electromagnetic
simulation package IE3D. Size-down technique is also introduced formaking the associated POD antenna smaller. The return loss of the
prototype antenna is measured for comparison with the simulated data.
FMC10 - 3
11:20

New Platform for Mobile Display
H. Yamaguchi, S. Uchikoga
Toshiba, Japan

We propose a separate system instead of an all-in-one system as a newplatform for mobile display. In a separate system, displays and otherdevices for human interface are separated physically and connected
wirelessly to a base unit which has processing and storage functions.
We have made a prototype of a mobile display in a separate system.
The prototype weighs about 550g with a 12.1”XGA panel and an IEEE
802.11b/g wireless module. The issues concerning the requirements fordisplays are discussed.

----- Lunch -----

14:00 - 15:20

ANA Hotel Clement Takamatsu Hiten 1

FMC11: Optical Films (1)Chair：
Co-Chair：

L. Wu, Optimax Tech., Taiwan
H. Mori, Fuji Photo Film, Japan

FMC11 - 1:
14:00

InvitedPolarizer for LCD Application

L. Wu
Optimax Tech., Taiwan

The developing trend of polarizer for LCD TV application was introducedin this paper. The ways how to improve optical performances including
wide viewing, high contrast, low color shift at dark state from polarizer
side was emphasized.

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FridayFMC11 - 2
14:20

December 9
Development of Low-Retardation TAC Film
H. Nakayama, N. Fukagawa, Y. Nishiura, S. Nimura,T. Yasuda, T. Ito, K. Mihayashi
Fuji Photo Film., Japan

We have developed advanced technologies for reducing the out-of-planebirefringence of TAC (triacetyl cellulose) film. With these technologies,
we have commercialized, for the first time, a new Low-Retardation TAC
film, called FUJI FILM‘Z-TAC’. This epoch-making TAC film’s Re value(in-plane retardation) and Rth value (out-of-plane retardation) are bothnearly zero. This TAC film can remove LCD’s color-shift at oblique
incidence, especially for the IPS mode. Also, this Z-TAC film can use
existing cost-effective roll-to-roll manufacturing process for polarizer film.
FMC11 - 3
14:40

Development of Wide Viewing Angle Polarizer for
IPS-LCDK. Yoda, S. Yano, H. Yoshimi, T. Shouda
Nitto Denko, Japan

We studied problems about the viewing angle of a polarizer, andperformed the design based on an optical theory. As a result of
performing the examination by a simulation, the relation between theretardation in the thickness direction of a polarizer protection film has
and the viewing angle characteristics (light leakage in the oblique
direction, and color shift when the viewing angle is changed.) of a liquid
crystal display (LCD) was clarified.
FMC11 - 4
15:00

Super Wide-View Polarizer with Wide Wavelength
Range for High Contrast Liquid Crystal Displays
T. Ishinabe, T. Uchida
Tohoku Univ., JapanWe developed a super wide-view polarizer with a broad wavelength
range. By using a uniaxial film as a protection for the polarizer and two
biaxial compen-sation films, we obtained a high contrast ratio for a wideviewing-angle range.

----- Break -----

15:40 - 16:40

ANA Hotel Clement Takamatsu Hiten 1

FMC12: Optical Films (2)Chair：
Co-Chair：J. C. Lapp, Corning, USA
Y. Fujimura, Nitto Denko, Japan95

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FridayFMC12 - 1:
15:40

December 9
Invited A Novel Optical Compensation Film for OCBLCDs
R. Matsubara, Y. Ito, S. Nakamura, H. Mori, K. Mihayashi
Fuji Photo Film, Japan

We have successfully developed and commercialized the OCB-WV film.
The OCB-WV film has a PDM (polymerized discotic material) layer
coated on a TAC substrate, giving excellent viewing angle characteristics
for image-blurring-free OCB-TVs. In this paper, we show the concept of
optical design of the film and the steps of optimization.
FMC12 - 2
16:00

Liquid Crystalline Films as New Generation
Retardation Films for Viewing Angle Compensationof LCDs
T. Seki, G. Suzaki, A. Mutou, T. Uesaka, S. Nishimura,
H. Mazaki
Nippon Oil, Japan

We have developed liquid crystalline retardation film technology by using
rod-like liquid crystalline polymer. The resulting liquid crystalline
retardation film has several advantages over conventional uni- or biaxial
stretched retardation film. By using liquid crystalline polymer, thedirection of the optical axis can be determined freely for roll-to-rolllamination. High-order structures such as twisted nematic, hybrid
nematic and homeotropic structures can be stabilized for ideal
compensation of STN, TN, ECB, VA and IPS LCDs.
FMC12 - 3
16:20

Optical Compensation Characteristics ofRetardation-Controlling Color Filter
T. Kawashima, K. Ikegami, S. Hayashi, N. Moriya
Dai Nippon Printing, JapanThe optical compensation characteristics of a retardation-controllingcolor filter made by directly stacking two retardation layers consisting ofpolymerizable liquid crystal (PLC) were investigated, with a special focus
on the wavelength dispersion characteristics of the retardation.
Fabricated retardation layers are very thin and have good thermal
stability; and they were found to exhibit excellent optical compensation
characteristics throughout the visible-light region.
Author Interviews
17:10 - 18:10

Supporting Organizations:
The Japan Society for Printing Science and Technology
Japan Society of Colour Material
The Technical Association of Photopolymers, JapanThe Imaging Society of Japan
Society of Photographic Science and Technology, Japan
Japan Printed Circuit Association
The Society of Radtech, JapanThe Society of Polymer Science, JapanThe Japnese Reaserch Assosiation of Organic Electronics Materials
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Tuesday

December 6

Workshop on CRTs
Tuesday, December 6
16:50 - 16:55

ANA Hotel Clement Takamatsu Hiten 2

Opening
Opening Remarks
16:50
S. Shirai, Workshop Chair
16:55 - 18:00

ANA Hotel Clement Takamatsu Hiten 2

CRT1: Slim CRTs
Chair：
Co-Chair：S. C. Shin, Samsung SDI, Korea
T. Sugawara, Asahi Glass, Japan

CRT1 - 1:
16:55

InvitedGlass Bulb Design for Super Slim Tubes

T. Kuwashima, T. Murakami, Y. Kobayashi
Asahi Glass, Japan

In the design work for Super Slim CRTs, how to reduce and disperse
the vacuum stress induced on the seal portion between panel andfunnel, and on the funnel body becomes a major issue to solve. This
paper presents design optimization for Super Slim bulbs considering
long-term reliability and safety characteristics.
CRT1 - 2
17:20

The PF Band System for Vixlim
J. H. Kim, S. S. Choi, J. H. Kim, S. C. Shin, H. S. Oh,
J. S. Bae, E. S. Park, S. N. Lee
Samsung SDI, Korea

A CRT has great merits on screen quality, cost and so on. Therefore, it
has the largest market sharing on display devices. However, it is front ofserious challenge from FPD that has merits on slim thickness and lightweight. One of the serious problem in slim CRT design is the increaseof glass stress and weight according to shorten total length. We havedeveloped PF Band System to solve this problem and this is the themeof this paper
CRT1 - 3
17:40

Development of 29-in. SuperSlim CRT
S. G. Kim, S. J. Cho, S. H. Jo, J. E. Choi, M. H. Lim,N. J. Koh
LG.Philips Displays, Korea

Since the introduction of 32-inch SuperSlim CRT, LG. Philips Displays
has developed the slimmest 29-inch SuperSlim with 120 degrees
deflection angle and deep gun insertion technology. With the excellent
quality and comparable cost, 29” SuperSlim has the bestcompetitiveness in the CRT models. 29” SuperSlim will make a great
contribution to the extension of the life of CRT and make it possible toget advantage over FPDs.

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Tue./Wed.

December 6/7

Author Interviews
18:20 - 19:20

Wednesday, December 7
9:00 - 9:50

ANA Hotel Clement Takamatsu Hiten 2

CRT2: CRT Market Trends
Chair：
Co-Chair：M. Maeda, Maeda Consulting, Japan
S. Shirai, Hitachi Displays, Japan

CRT2 - 1:
9:00

Invited The Future Development Trend of CRT TV
Market in China
X. Yan
TCL Comps. SBU, China

The current situation of CRT TV Market in mainland China is presented.
Its further trend is discussed. It is possibly that the decline of CRT TV
market in Mainland China is a little faster than most people thought.
CRT2 - 2:
9:25

Invited

Display Scene : An Indian Perspective

J. Joseph, S. Talukdar
Samtel Color, India

Display market in India is getting more and more importance globally
due to its big potential. Booming economy, flooding of cable channels,
emerging new display technologies and changing government policies
are going a long way in boosting the display market size. With all the
major contributing factors influencing the display market growth taken
into account, CRT TV are expected to rule Indian Display Market for atleast 4 to 10 years.

----- Break ----10:10 - 11:40

ANA Hotel Clement Takamatsu Hiten 2

CRT3: Electron Guns & Cathodes
Chair：
Co-Chair：

H. Y. Chen, Chungwa Picture Tubes, Taiwan
Y. Wada, Matsushita Toshiba Picture Display, Japan

CRT3 - 1:
10:10

Invited

Progress of Electron Gun Technology

S. Shirai
Hitachi Displays, Japan

Electron Gun is key parts of the CRT to generate, focus and accelerate
the electron beam. The CRT picture quality and lifetime are largely
determined by the gun design. This paper describes beam forming
region and main lens design concept, reduction of the focus
characteristics distribution, etc. The latest challenge is how to cancel thestrong astigmatism of the large angle (125 degrees) deflection yoke ofthe slim tube.
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Wednesday

December 7

CRT3 - 2
10:35

Electron Gun Using Dome Cathode for Full Spec. HiVision TV
Y. J. Yoon, M. C. Bae, H. C. Kim, T. W. Kim
Samsung SDI, Korea

Electron gun using impregnated dome cathode has been studied forrealizing full spec hi-vision TV. Latest display device is requiring highbrightness and high resolution, but it is very difficult to improve both
qualities in the conventional flat cathode structure. Therefore, we havedeveloped the new cathode structure, which is dome shaped cathode torealize initial orbits as from an object point. We can set the cathodenear the first accelerated grid (G2). By this method, we can get the 2.5
times larger current than the conventional method and restrict theenlargement of working area.
CRT3 - 3
10:55

Optimum Gun Design with the Improved E4 Main
Lens for Large Screen Color TV Tubes
Y. Wada, H. Tomoyasu*, T. Ishihara, H. Morimoto
Matsushita Toshiba Picture Display, Japan*Matsushita Elec. Ind., Japan

New electron guns have been developed both of dynamic focus andnon-dynamic (or static) focus types for large screen color TV tubes,
realizing excellent picture quality with the improved E4 main lens. In
order to reduce mass-production costs, oxide cathodes are utilized
instead of expensive impregnated cathodes. And almost the same
design for each electrode is adopted in both types of the new electronguns.
CRT3 - 4:
11:15

InvitedRare Earth Oxide Doping of Oxide Cathodes

D. den Engelsen
LG.Philips Displays, The Netherlands

The effect on life performance by doping oxide coated cathodes withrare earth oxides is explained in terms of electrolysis of the emittercoating. Poisoning of the emission with O2 can be explained with thesame theory. Furthermore, a model of the crystal imperfections (defects)of BaO is proposed. This explains the experimentally observed
relationship between conductivity and dopant concentration.

----- Lunch -----

13:40 - 15:00

ANA Hotel Clement Takamatsu Hiten 2

CRT4: Masks & Glass
Chair：
Co-Chair：D. den Engelsen, LG.Philips Displays, The Netherlands
T. Kusunoki, Sony, Japan99

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Wednesday
CRT4 - 1
13:40

December 7
Improvement of Doming and White Uniformity inReal Flat AK Mask CRT
Y. M. Poon, K. M. Kok, K. Y. Lim, C. S. Queek, C. T. Lau,
K. W. Tan, C. C. Chao
Chunghwa Picture Tubes, Malaysia

For the improvement of doming and screen performance of real flat
aluminiumkilled (AK) CRT tube, mask trajectory modeling is introduced
to illustrate the mask aperture trajectory relative to the preferential beam
trajectory during doming. Several optimal measures such as introducing
enhanced curve mask and minimizing mask expansion restriction result
in landing shift decreases up to 60%. Screen white uniformity is
optimized using distinctive pattern filters, where improvement in color
different of up to 65% is recorded.
CRT4 - 2
14:00

Analytical Prediction of Local Doming in SuperSlim
CRTs
EWC. Coenen*, P. Martens, R.M. Jungblut
LG.Philips Displays, The Netherlands*Eindhoven Univ. of Tech., The Netherlands

In slim tube designs we strive for as flat as possible shadow masks
preferably made of AKOCA. This makes the tube sensitive to local
doming. An analytical model is presented allowing quick optimisation of
the mask contour giving insight into geometrical and material properties
influencing mask deformation due to local heating. The principle ofminimum strain energy is used to find a static mechanical equilibrium.
The ratio between stiffness in North-South and East-West direction isdecisive for the performance.
CRT4 - 3
14:20

Effects of Nano Bismuth Oxide Coating on Shadow
Mask
S. M. Kim, N. J. Koh
LG.Philips Displays, Korea

Nano bismuth oxide as new electron reflection material was studied in
29” Real Flat CPT. As results, When nano bismuth oxide with 80 nm of
average diameter was used, Spray coating was done clearly withoutmask hole clogging and the doming properties were improved morethan before in comparison with the average 3.5 μm of the conventional
bismuth oxide.
CRT4 - 4
14:40

Development of Fast Sealing Solder Glass for CRTs
N. Horie, Y. Segawa, Y. Hatakenaka, K. Okita, T. Sugiu,
K. Watanabe, R. Tanabe, A. Nakamura*
Asahi Glass, Japan*Asahi Techno Glass, Japan

We have developed a fast sealing solder glass which is possible to seal
in a short time to reduce a cost of CRT and to improve a productivity. A
sealing time of a new solder glass is 25 min. It is 10 min. reduction
compared to a conventional one. The basic properties and bulb
properties of the new one are enough high.

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Wednesday

December 7

Author Interviews
17:30 - 18:30

15:00 - 17:00

Citizen’s Gallery

Poster CRTp: CRTs
CRTp - 1

An Enhanced Clear Gun Design for 21” EDTV
Application
C. T. Chan, W. N. Chang*, P. H. Chong, C. C. Chao
Chunghwa Picture Tubes, Malaysia*Chunghwa Picture Tubes, Taiwan

In order to get better focus performance for 21” EDTV, and to reduce thecost of grid part, an enhanced clear gun design has been implemented.
We change the main lens gun structure to meet the above
requirements. Due to the bigger equivalence lens diameter, the smaller
spot size (on gun exit point) could be obtained. Moreover, using
common grid parts with other types also reduce the cost of related gridparts by 30%.
CRTp - 2

Improvement of Projection CRT Electron Gun with
Overlapping G3 & G41 Structure
W. N. Chang, C. T. Wang, J. L. Huang, C. H. Yeh
Chunghwa Picture Tubes, Taiwan

A new designed to improve the focus performance of PCRT is studied.
To narrow the G1&G2 aperture diameter and the G41 aperture, then toextend the G41 grid part into G3. The beam divergent angle issuppressed and the spherical aberration is reduced. Due to the overlap
of G3&G41, the blur of the spot size from the side field of G3&G5
connector is prevented. A small spot size is obtained to improve thequality of PCRT.
CRTp - 3

Body Color Improvement of High TransmittancePanel for Low Power CRTs
L. Yang, Z. Huang, W. Lin
CPTF Optronics, China

To cut down power consumption of CRTs, the thickness of panel isreduced. With the reduction of thickness, the body color of CRTs getsbad. A certain Ni alloy target is used to improve the body color,
replacing the Ti target in surface sputter coating. The body color of low
power CRTs with Ni alloy film is similar with the semi-tint CRTs.

Supporting Organizations:Technical Group on Information Display, ITE
Technical Committee on Electronics Information Displays, Electronics
Society, IEICE

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Wednesday

December 7

Workshop on Plasma Displays
Wednesday, December 7
13:40 - 15:00

Sunport Hall Takamatsu Small Hall 1

PDP1: Protective Layer
Chair：
Co-Chair：L. F. Weber, Consultant, USA
T. Shinoda, Fujitsu Labs., Japan

PDP1 - 1:
13:40

Invited Integrated Computational Chemistry System
for Material Design of PDP
A. Miyamoto*, H. Kikuchi*, H. Tsuboi*, M. Koyama*,
A. Endou*, M. Kubo*,**, C. A. Del Carpio*, H. Kajiyama****Tohoku Univ., Japan**JST-PRESTO, Japan***Univ. of Tokyo, JapanFirst-principles calculations suggested that both positive and negative
charges accumulated in MgO protecting layer decrease its stability.
Moreover, we proposed that Al cation is an effective dopant for the MgO
protecting layer, because it increases both the stability and secondary
electron emitting ability. Our tight-binding quantum chemical molecular
dynamics method revealed that oxygen vacancy decreases the stabilityof the MgO protecting layer. Finally, we concluded that our integrated
computational chemistry system is very effective to design plasma
display panel.
PDP1 - 2
14:00

Quantum Chemical Molecular Dynamics, ClassicalMolecular Dynamics, and Kinetic Monte Carlo
Approach to Design of MgO Protecting Layer in PDP
M. Kubo*,**, H. Kikuchi*, H. Tsuboi*, M. Koyama*,
A. Endou*, C. A. Del Carpio*, H. Kajiyama***,A. Miyamoto**Tohoku Univ., Japan**JST-PRESTO, Japan***Univ. of Tokyo, Japan

We succeeded in the development of a new kinetic Monte Carlo
program to simulate the destruction processes of the MgO protecting
layer in plasma display panel by the electric charge accumulated in the
MgO surface. Simulation results proposed that MgO (111) surface with
nano-dot structures covered by (001) facets has the highest stability
under electric field condition, which is against the previous knowledge
on the thermal stability of MgO. The mechanism of the high stability of
the above structure was clarified.

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Wednesday

December 7

PDP1 - 3
14:20

Secondary Electron Emission from MgO Films on
Metal Substrates
H. Kajiyama*, K. Tsutsumi*, T. Fukasawa*, M. Ishimoto**,G. Uchida*, T. Nishio*, T. Shinoda*,***Univ. of Tokyo, Japan**Fujitsu Labs., Japan

Secondary electron emission coefficient, γ, of MgO deposited on a metal
substrate was measured at the temperatures below and above thedeposition temperatures. The γ was temperature dependent and had abroad convex peak at the temperature a little bit higher than thedeposition temperature. The mechanism of temperature dependence of
γ is discussed based on the thermal stress induced by the mismatch ofthermal expansion coefficient between an MgO film and a metal
substrate.
PDP1 - 4:
14:40

Invited Discharge Time Lag Shortening by New
Protective Layer in AC PDP
M. Amatsuchi, A. Hirota, H. Lin, T. Naoi, E. Otani,
H. Taniguchi, K. Amemiya
Pioneer, JapanA new material shortening discharge lag time (DLT) for plasma display
panels (PDPs) has been developed. New cell structure in which thematerial is formed as a layer in each cell. We named it “Crystal Emissive
Layer” (CEL) and CEL structure. DLT of the new cell is reduced to 1/8 ofthe conventional one. DLT of CEL structure panels keeps short for thevarious cell conditions such as Xe concentration, cell size, RGB
phosphor and so on.
Author Interviews
17:30 - 18:30

15:00 - 17:00

Citizen’s Gallery

Poster PDPp1: PDP (1)PDPp1 - 1

Improvement of Bright-Room Contrast of PDP by
Optical Filters Using Organic Dyes
M. Morohashi, H. Minami, T. Kitagawa, A. Morimoto, T. Ito,T. Okamura
Mitsui Chems., Japan

Optical filters which can improve image qualities of Plasma Display
Panels (PDPs) have been studied. We obtained optical filters that realize
high bright-area contrast and good surface color of PDPs under various
external illuminants, e.g. three-band fluorescent lamps, by utilizingcolored adhesive containing organic dyes that selectively absorb
unpreferable light.

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Wednesday
PDPp1 - 2

December 7
Development of Novel Chassis of 42-in. PDP Module
for Reducing Material Cost and Weight
K. Jeong, I. Cho, K. Lee
Samsung SDI, Korea

As a continuing effort to reduce module cost of PDPs, a novel approachfor chassis structure is proposed in this study. Up to now chassis
structure is made of aluminum alloy for its excellent characteristics ofthermal and electrical conductivities. Adopting plastic material instead of
traditional aluminum as for a chassis, both the cost and weight can be
reduced more than 30 percent. Thermal and electrical substructures arealso devised for the purpose of both electrical ground and thermal
dissipation.
PDPp1 - 3

Suppression of Visible Defects Caused byMicroscopic Particles in Direct Filter Attached on
PDP
N. Hori, Y. Kawanami
Fujitsu Hitachi Plasma Display, Japan

We have introduced a novel adhesive layer into the surface filter
attached on PDP. The adhesive layer avoids visible defects induced by
the incidental microscopic particles between the filter and the front glass
substrate of PDP, by involving them with little air bubble. This filter issuccessfully laminated on the final-tested PDP module.
PDPp1 - 4

Withdrawn

PDPp1 - 5

New 256-ch PDP Address Driver IC with Reducing
Switching Noise
T. Nomiyama, K. Kawamura, A. Fukuchi, K. Sato,Y. Shigeta, G. Tada
Fuji Elec. Device Tech., Japan

We have developed new 256-ch PDP address driver IC with reducing
switching noise and good cost performance. To solve switching noiseproblem, we have developed gate controlled output technique which can
reduce switching noise successfully. In addition, we adopted semi-slim
type layout to keep GND stable in TCP, and to prevent from operational
errors. By new type layout, we could shrink die size per output down to
0.067mm2, 15% smaller than our conventional slim type IC.

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Wednesday
PDPp1 - 6

December 7
Current Injection Energy Recovery Sustaining Driverwith Phase Shift Control for PDP
C.-L. Liu, S.-T. Yang, J.-W. Chen*, C.-Y. Lee*, C.-H. Lu*,
S.-H. Wang*, W.-C. Chang*
Chunghwa Picture Tubes, Taiwan*Tatung Univ., Taiwan

An energy recovery sustaining driver with phase shift control for AC PDP
is presented in this paper. Both simulation and experimental results
show that the switching losses and current stress on switches can be
reduced significantly so that the efficiency is increased. With current
injection mode, a cost-effective energy recovery is proposed to produce
more stable light waveforms and reduces voltage across switches. It is
most important that with optimum shift angle the panel temperature canbe lowered effectively.
PDPp1 - 7

New Two Stage Recovery (TSR) Driving Method for
Low Cost AC PDP
K. Ito, B.-G. Cho*, M. K. Lee, J. W. Song, S. C. Kim,
H.-S. Tae*, N.-S. Jung, K.-S. Lee
Samsung SDI, Korea*Kyungpook Nat. Univ., Korea

In this paper, a new driving scheme and energy recovery method is
proposed to reduce the cost of plasma display panel (PDP). In proposed
driving scheme, two electrodes in three-electrode type AC PDP areused and sustain pulse which consist of positive and negative pulse isapplied to a scan electrode. In order to embody positive and negative
sustain pulse, PDP driving circuit that adopted the TSR (Two Stage
Recovery) method is proposed. Proposed driving scheme and energy
recovery method can reduce cost for driving circuit without increasing
power consumption.
PDPp1 - 8

New Cost-Effective Driving Method Based on Vt
Close Curve Analysis in AC PDP
B.-G. Cho, H.-S. Tae, K. Ito*, J. W. Song*, M. K. Lee*,
S.-C. Kim*, N.-S. Jung*, K.-S. Lee*
Kyungpook Nat. Univ., Korea*Samsung SDI, Korea

A new driving waveform was proposed to reduce the cost in 42 inch
PDP-TV based on Vt close curve by eliminating the common board. Dueto the misfiring problem during sustain-period when applying new driving
waveform, the wall voltage was measured and analyzed using Vt close
curve. As a result of adopting proposed driving waveform designed
using Vt close curve analysis, the cost of PDP module could reduceabout 20 % compared with the conventional PDP module without
misfiring discharge.

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Wednesday
PDPp1 - 9

December 7
A Two-Step-Discharge Driving Method andQuantitative Analysis of Increased Luminous
Efficiency of AC PDPs
K. Yamamoto, K. Suzuki, T. Kishi*, T. Sakamoto*Hitachi, Japan*Fujitsu Hitachi Plasma Display, Japan

A driving method for sustain-modulation two-step discharge wasdeveloped, and factors in increased luminous efficiency of ac-PDPs
were quantitatively analyzed. The panel luminous efficiency achieved bythis method was 61% higher than that achieved by the conventional
method. The factors in increased luminous efficiency are (1) a 51%
increase in discharge luminous efficiency due to a lower discharge
space voltage, and (2) a 7% increase in discharge power efficiency
because of lower discharge current peaks in the panel.
PDPp1 - 10

Reducing Average Address Power of PDPs
X. Zhang, C. Liu, J. Zhang, Z. Tu
Xi’an Jiaotong Univ., China

Address power is proportional to the change rate of subfield data invertical direction. It can be reduced obviously using address energy
recover circuit for some picture with high change rate, but increase
address power for others with low change rate. According to the change
rate, adaptive energy recover circuit is developed and it can keep
address power in low for any picture.
PDPp1 - 11

Effects of Priming Particles on Reset Discharge
Produced by Dual-Slope Ramp Reset Waveforms in
AC PDP
J. K. Lim, H.-S. Tae
Kyungpook Nat. Univ., Korea

The effects of priming particles on the weak reset discharge
characteristics in the dual-slope ramp reset waveform are examined.
The first voltage-slope ramp waveform plays a role in producing thepriming particles, which has a significant influence on the reset
discharge during the second voltage-slope period. That is, the priming
particles produced by the first voltage-slope ramp waveform contributeto facilitating and lowering the IR emission intensity during the second
voltage-slope period.

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Wednesday

December 7

PDPp1 - 12

New Address-While-Display Driving Method for High
Picture Quality PDP
J.-C. Jung, K. H. Seo, J. K. Kim*, K.-W. Whang
Seoul Nat. Univ., Korea*Hankyong Nat. Univ., Korea

We propose a new address-while-display (AWD) driving method to
obtain a high contrast ratio and a wide driving margin in which short
ramp reset (SRR) pulse made it possible to assure a high dark room
contrast ratio of 10000 to 1 or more and a wide operating voltage
margin of 40V by redistributing the wall charges between address andscan electrode effectively. Moreover, the improved moving picture quality
could be obtained by reducing the dynamic false contour through thealternating subfield arrangement (ASA) method without any otheradditional image processing.
PDPp1 - 13

Optical Characteristics for Image Sticking on AC
PDP
Y. G. Han, S. B. Lee, C. G. Son, S. H. Jeong, N. L. Yoo,
H. J. Lee, J. H. Lee, K. B. Song, B. D. Ko, J. M. Jeong,
P. Y. Oh, M. W. Moon, K. B. Jung, E. H. Choi*
Kwangwoon Univ., Korea*LG. Philips LCD, Korea

We have investigated the driving method of AC-PDP for preventing
image sticking. The preventing method of image sticking was proposedby adopting the SRP(Sticking Removal Pulse). The variation ofbrightness is most affected by the MgO formed on the surface of thephosphor layer. Using SRP we could take off the MgO on the phosphor.
As a result, the image sticking is reduced when the driving method
adopted an SRP.
PDPp1 - 14

Degradation Characteristics of MgO Protective Layer
and Phosphor in AC PDP
K. B. Song, P. Y. Oh, S. B. Lee, H. J. Lee, C. G. Son,
E. H. Choi
Kwangwoon Univ., Korea

We have investigated the characteristics of degradation of MgOprotective layer and phosphor, which correlates to the image-sticking in
AC-PDP. Firing and sustain voltages have been lowered as comparedwith those for normal MgO protective layer and barrier rib. But the test
panel without phosphor and barrier rib has been shown to have higher
firing and sustain voltages than those for the test panel with both barrier
rib and phosphors in AC-PDP. It is also found that the discharge current
was further delayed for the test panel without rear plate than those withboth barrier rib and phosphors.

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Wed./Thu.
PDPp1 - 15L

December 7/8
New Driving Method for High Contrast Ratio of AC
PDPs
J. G. Bae, J. Y. Kim
Sejong Univ., Korea

A new driving method that requires less reset time and that significantly
improves the dark room contrast ratio is introduced. Using this new
driving method, the required time for reset could be reduced to 150μs
from 350μs of the conventional ramp reset method, and almost infinite
dark room contrast ratio is obtainable because the luminance of the offcell is almost zero.

Thursday, December 8
9:00 - 10:20

Sunport Hall Takamatsu Small Hall 1

PDP2: Driving (1)Chair：
Co-Chair：H. Tolner, Consultant, The Netherlands
M. Uchidoi, Pioneer, Japan

PDP2 - 1:
9:00

Invited Challenge of Measuring Annual Energy
Consumption of TV Sets
L. F. Weber
Consultant, USA

The complex TV-signal-dependent energy con-sumption characteristics
of PDP TVs are analyzed to arrive at an energy measurement methodthat is fair to all TV display technologies including: LCD, PDP, CRT,
OLED, FED and Projection.
PDP2 - 2
9:20

Driving of High Contrast and High Speed
Discharging PDP
K. Sakata, T. Tokunaga, M. Nishimura, S. Iwaoka,
N. Saegusa
Pioneer, Japan

New driving waveform optimized for CEL structure (new cell designusing Crystal Emissive Layer) has been introduced. CEL has madestable and very weak reset discharge possible, and dark room contrast
ratio of 4000:1 is obtained. High speed discharging of CEL structure andlow address power consumption of CLEAR driving method have realized
the single scan addressing of XGA plasma display panel (PDP). We
assure that these technologies will open the much higher resolution
PDP era.

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ThursdayDecember 8

PDP2 - 3
9:40

High-Speed Driving of PDPs with Wall-Charge
Elimination Write-Address Scheme
T. Sawada, T. Koike, D. H. Kim, T. Shiga, K. Igarashi,
S. Mikoshiba
Univ. of Electro-Commun., Japan

A high-speed driving technique is introduced in which addressing isdone by eliminating, instead of accumulating, the wall charges. The datapulse of 1.33μs wide and 100V was realized in a Ne+10%Xe PDP. A
contrast of 3200:1 was obtained by providing one setup period in a TV
field.
PDP2 - 4
10:00

New LLC Resonant Converter with Multiple Outputsfor High Efficiency and Low Cost PDP Power Module
C.-E. Kim, K.-H. Yi, S.-W. Choi, G.-W. Moon, D.-W. Kim*,
K.-I. Oh*, N.-S. Jung*, K.-S. Lee*
KAIST, Korea*Samsung SDI, Korea

A new LLC resonant converter with multiple outputs is proposed for highefficiency and low cost plasma display panel (PDP) power module. By
employing the transformer, which has the two and more secondary side,
the proposed converter can have multiple outputs and they show thegreat cross-regulation characteristics. Therefore, the proposed converter
can be implemented with high efficiency, low cost, and compact size,
and then the proposed converter is suitable for high efficiency and low
cost PDP power module.

----- Break -----

10:40 - 12:00

Sunport Hall Takamatsu Small Hall 1

PDP3: Discharge and Driving (2)Chair：
Co-Chair：K. W. Whang, Seoul Nat. Univ., Korea
S. Mikoshiba, Univ. of Electro-Commun., Japan

PDP3 - 1
10:40

Analysis on Reset Discharge Characteristic in AC
PDP with Sustain Gap of 200μm
K.-H. Park, S.-K. Jang, H.-S. Tae, J.-H. Seo*, S.-H. Lee**
Kyungpook Nat. Univ., Korea*Incheon Univ., Korea**Inha Univ., Korea

The reset discharge characteristic is investigated in a sustain gap of 200
μm. As the sustain gap is wider, the stable weak discharge region using
an MgO cathode condition is decreased, whereas the unstable weakdischarge region using a phosphor cathode condition is increased. To
reduce the unstable reset discharge in a sustain gap of 200μm, the bias
voltage (Vadd-bias) needs to be applied additionally to the addresselectrode during the ramp-up period and the X-bias voltage (Vcom-bias)
needs to be controlled properly to the common(X)electrode during theramp-down period. The reset discharge in a sustain gap of...

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ThursdayPDP3 - 2
11:00

December 8
Feasibility of Driving PDP with 1-Volt Data and 30Volt Scan Pulses by Utilizing Self-Erase-Discharge
Threshold
A. Saito, T. Shiga, S. Mikoshiba
Univ. of Electro-Commun., Japan

Data and scan pulse voltages can be reduced to 1 and 30 volts,
respectively, by utilizing a sharp threshold of self-erase-discharge
ignition, provided that the panel has perfectly uniform characteristics. If
the panel has a breakdown voltage non- uniformity of ∆V, then the datapulse voltage has to be increased by ∆V. To realize the low voltage
addressing operation, the erase-addressing scheme is adopted together
with accumulating an appropriate amount of wall charges prior to theaddressing.
PDP3 - 3
11:20

Study on Characteristics of AC PDP with Stacked
Facing ElectrodeJ. W. Ok, H. J. Lee, W. S. Choi, Y. M. Jang, H. J. Lee,C. H. Park, J. S. Kim*, J. H. Ryu*
Pusan Nat. Univ., Korea*LG Elect., Korea

In this study, we propose a new structure of stacked facing-electrode.
The proposed structure has a long discharge gap, low discharge
currents, high luminance, so it has high luminous efficiency. On thebasis of results from 2-D simulation model, we make 4-inch test panel
formed by the structure of stacked facing-electrode. When comparedwith the conventional structure of coplanar-electrode, proposed structure
showed about 2.9 times increment of luminous efficiency, 49%
improvement of luminance, and 62% decrement of discharge currents.
PDP3 - 4
11:40

High Luminous Efficacy AC PDP with Auxiliary
Electrodes
N.H. Shin, K. S. Lee, S. C. Song, B. J. Shin, K. C. Choi*
Sejong Univ., Korea*KAIST, Korea

High luminous efficacy AC PDP with the auxiliary electrodes in the front
plate was proposed and investigated. The auxiliary electrode located at
the center of scan and common electrode was made of transparent ITO.
The efficacy had its maximum value when the spacing between scanand common electrode was 200μm. The maximum efficacy of test panel
with stripe barrier rib, VGA resolution, and green cell was 6.7 lm/W for
Ne+13%Xe and 8.7 lm/W for Ne+20%Xe gas-mixture, respectively.
Author Interviews
17:30 - 18:30

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ThursdayDecember 8

15:00 - 17:00

Exhibition Hall

Poster PDPp2: PDP (2)PDPp2 - 1

High Resolution Photosensitive Ag Paste andPhotolithographic Process for PDP
L. S. Park, H. S. Yoon, D. G. Kim, S. H. Kim, Y. J. Hur,A. Tawfik
Kyungpook Nat. Univ., Korea

Several methods are available for the fabrication of electrode pattern forthe plasma display panel ( PDP ) including screen printing ,photolithographic and piezo-type ink-jet printing methods. In this work
we synthesized acrylic terpolymers with different acid value andmolecular weight as binder polymers and examined their effect on thephotolithographic patterning of electrodes on the PDP panel from theview point of high definition TV application.
PDPp2 - 2

Prevention of Yellowing of Bi-Based Transparent
Dielectric Layers in PDP
J. S. Park, J. H. Hwang, C. Y. Kim, T. Masaki*, D. K. Choi**,
K. J. Hong***
Korea Inst. of Ceramic Eng. & Tech., Korea*Halla Univ., Korea**Hanyang Univ., Korea***Phoenix PDE, Korea

Method of the preventing yellowing which is caused by the formation of
Ag colloids was examined. To prevent yellowing, we examined the effectof firing temperature of dielectric layer, metal oxide additives and theparticle size of transparent dielectric glass. Yellowing was diminished as
the firing temperature increased. Among the many kinds of metal oxide
additives, best result of preventing yellowing was obtained by theaddition of CuO. With the effect of particle size, large particle size
showed the less yellowing.
PDPp2 - 3

Withdrawn

PDPp2 - 4

Withdrawn

PDPp2 - 5

Temperature Dependence of Secondary Electron
Emission from MgO
K. Tsustumi*, M. Ishimoto**, T. Fukasawa*, G. Uchida*,
H. Kajiyama*, T. Shinoda*,***Univ. of Tokyo, Japan**Fujitsu Labs., Japan

Secondary electron emission (SEE) from MgO is measured at thetemperatures between 373 and 673 K. The sample is the one depositedat 523 K on indium tin oxide (ITO) coated glass substrate. We find that
there are three SEE phases depending on the temperatures: lowemission phase above 573 K, high emission phase below 423 K andtransition phase at intermediate temperatures.

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ThursdayPDPp2 - 6

December 8
Electro-Optical and Degradation Characteristics of
MgO Protective Layer after RF Plasma Treatment
C. G. Son, H. J. Lee, Y. G. Han, S. H. Jeong, N. L. Yoo,
S. B. Lee, J. E. Lim, J. H. Lee, B. D. Ko, J. M. Jeoung,
M. W. Moon, P. Y. Oh, J. C. Jung, W. B. Park*, E. H. Choi
Kwangwoon Univ., Korea*LG Elect., Korea

We investigated electro-optical and degradation characteristics of MgOprotective layer after radio frequency (RF) plasma treatment. Specially,
O2 plasma treatment has best discharge characteristics, because O2
plasma removed the contaminating materials from the surface of MgO
through the physical etching and the chemical reaction. These surface
properties changing have an effect on degradation characteristics. The
degraded MgO have been changed the surface morphology. As
deposited MgO surface morphology is changed more than O2 plasma
treatment MgO. This result means that O2 plasma treatment MgO
surface is harder then as deposited MgO surface.
PDPp2 - 7

Sputtering Yield of MgO Protective Layer in AC PDPs
H. J. Lee, C. G. Son, S. H. Jung, Y. K. Han, S. B. Lee,
N. L. Yoo, J. E. Lim, J. H. Lee, K. B. Song, M. W. Moon,
P. Y. Oh, B. D. Ko, J. M. Jeong, J. W. Hyun, E. H. Choi
Kwangwoon Univ., Korea

The sputtering yield of MgO protective layer is related with the image
sticking. In this research, we have investigated the sputtering yield ofvarious MgO protective layers. So we have measured ion induced
secondary electron emission coefficient, the sputtering yield and erosion
rate of MgO protective layer and have observed the surface of MgOlayer. As a result, we have concluded that fused poly MgO is the moststability material as protective layer of AC-PDP.
PDPp2 - 8

Characteristics of Discharge and Secondary
Electron Emission Coefficient for MgAl2O4/MgO
Protective Layer in AC PDPs
J. M. Jeoung, B. D. Ko, P. Y. Oh, M. Y. Moon, K. B. Song,J. H. Lee, J. E. Leem, H. J. Lee, Y. K. Han, S. B. Lee,S. H. Jeong, C. K. Son, N. R. Yu, E. H. Choi
Kwangwoon Univ., Korea

The secondary electron emission coefficient (γ) of the MgAl2O4/MgO
protective layer has been investigated by γ-focused ion beam(γ-FIB)
system. The MgAl2O4/MgO protective layer have been found to havehigher values from 0.09 up to 0.12 than those for MgAl2O4 protective
layer from 0.06 up to 0.07 for Ne+ ion energies ranged from 90eV to 200
eV. Also it is found that for the MgAl2O4/MgO protective layer of
secondary electron emission coefficient (γ) is similar to that for the MgO
protective layer.

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ThursdayDecember 8

PDPp2 - 9

Measurement of Excited Xe Atom Density, MicroDischarge Plasma Density and Electron Temperaturein AC PDPP. Y. Oh, J. H. Lee, S. H. Jeong, S. B. Lee, M. W. Moon,
E. H. Choi
Kwangwoon Univ., Korea

The plasma ion density in AC-PDP is increased from 5.6 x 1011 cm-3 to
9.0 x 1011 cm-3 as the Xe mixture ratio to neon increase from 1 % to 10%, respectively, at 400 Torr. It is also noted that 5.2 x 1012 cm-3 in the
1s5 metastable state and 1.2 x 1012 cm-3 in the 1s4 resonance state forthe same condition. It is observed that the exited Xe atom density andthe plasma ion density are in strong correlation sharp between eachother in this experiment.
PDPp2 - 10

Measurement of Excited Xe Atom Density with
Position on Sustaining Electrode in AC PDPs
S. B. Lee, P. Y. Oh, J. H. Lee, H. J. Lee, Y. G. Han,
S. H. Jeong, C. G. Son, B. D. Ko, J. M. Jeoung, J. E. Lim,
N. L. Yoo, M. W. Moon, K. B. Song, E. H. Choi
Kwangwoon Univ., Korea

In this study, we have been measured in the 1s5 metastable state byvarying position of bus electrodes with ITO gap of 50 μm distances
under the fixed gas pressure of 350 Torr and Ne-Xe(10%) mixture gas
by laser absorption spectroscopy in AC-PDP. It is noted that the
maximum excited xenon atoms densities are 1.8x1013 cm-1, 1.6x1013 cm-1
and 1.7x1013 cm-1 for the outbus, middle, and inside ones. And thevoltage margin for the inside, middle side and outside cases is 70 V, 95
V, 84V respectively. However, there is no difference of discharge current
delay.
PDPp2 - 11

Influence of Permittivity of Dielectric Layer on
Discharge Characteristics in High-Resolution AC
PDP
Y. Hirano, K. Ishii, Y. Murakami
NHK, Japan

In order to explore the possibility of realizing the high-resolution AC
PDP, we have been examining the discharge characteristics of a finepitch discharge cell. The discharge region in AC PDP is surrounded byinsulator materials, and so the electrical characteristics of the material
have a greater effect on the discharge characteristics. In this study, we
have attention to permittivity of panel material, and we performed
analysis for the discharge characteristics of the fine-pitch discharge cellusing 3-D discharge simulation.

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ThursdayPDPp2 - 12

December 8
Spatial Density Distribution of 1s5 Excited Xe Atoms
with Operating Time Measured by Laser Absorption
Spectroscopy in AC PDP
J. H. Lee, P. Y. Oh, S. B. Lee, H. J. Lee, Y. G. Han,
S. H. Jeong, M. W. Moon, E. H. Choi
Kwangwoon Univ., Korea

In this study, we have measured the absorption signals for the 1s5
xenon metastable state in the PDP cell with gap distances of 120μm
under the gas pressure of 350Torr and He(50%)-Ne-Xe(10%)mixture
gas in accordance with degradation times for the 72hours. It is foundthat the peak of excited xenon atoms density was increased rapidly at
operation time of 12 hours from 6.56*1012cm-3 to 8.78*1012cm-3. And thenit was increased continuously and slowly as operation time passed until
72hours. And it is found that the peak of excited xenon atoms density
was broad as the degradation time was long.
PDPp2 - 13

Front Address Structure for High Luminous Efficacy
AC PDPs
Y. Okumura, Y. Shintani, T. Ishibashi, M. Yoshinari,
T. Komaki
Pioneer, Japan

8-inch AC Plasma Display Panels with front address (FA) structures aredeveloped. Deep barrier ribs and high Xe content gas are applied to FA
structures for high luminous efficacy. FA structures have someadvantages under conditions of deep barrier ribs and high Xe content
gas.
PDPp2 - 14

Numerical Analysis of Capacitance between X-YElectrodes, and A-Y Electrodes on Cell Parameter in
AC PDPs
E. Y. Jung, J. C. Ahn, S. B. Kim, K. J. Suh, E. G. Heo,B. H. Lee, K. S. Lee, S. B. You, J. S. Jung, J. Y. Park,S. B. Song, H. Y. Lee
Samsung SDI, Korea

The characteristics of charge distribution on cell parameters areinvestigated by using numerical simulation in order to find a relation
between wall charge distribution with respect to cell parameters andrealize a full HD PDP. The simulation results show that both capacitanceof front panel (Cxy) and rear panel (Cay) strongly depend on theaddress electrode width, and barrier rib properties such as rib height,
permittivity, rib shape. In addition, the wall charge distribution has strong
correlation and a influence on determining a discharge characteristics
with respect to cell geometry.

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ThursdayPDPp2 - 15

December 8
Effect of Kr and Ar on Discharge Time Lag andImage Retention in AC PDP with High Xe Content
S. H. Kim, K. C. Choi*, B. J. Shin, K.-Y. Choi**, E.-H. Yoo**
Sejong Univ., Korea*KAIST, Korea**LG Elect., Korea

The additive gas effect on the discharge time lag of address pulse andthe image retention was investigated in AC PDP with Ne+13%Xe gasmixture. The discharge time lag was improved by adding a small amountKr gas to Ne+13%Xe gas-mixture up to 2% and thereafter gotten worse.
In the case of the addition of Ar gas to the Ne+13%Xe, the discharge
time lag of address pulse was not improved. The image retention time
was improved in AC PDP with Ne+13%Xe+[Kr or Ar] gas-mixture when
the concentration of Ar or Kr was varied from 1 to 5%.
PDPp2 - 16

Vacuum Ultraviolet Luminous Efficiency of He-Ne-Xe
Gas Mixture in AC PDP
N. L. Yoo, J. H. Lee, Y. G. Han, S. B. Lee, C. G. Son,
S. H. Jeong, H. J. Lee, J. E. Lim, P. Y. Oh, M. W. Moon,
J. M. Jeoung, B. D. Ko, K. B. Jung*, H. S. Uhm**,
E. H. Choi
Kwangwoon Univ., Korea*LG.Philips LCD, Korea**Ajou Univ., Korea

The gas mixture ratio is major factor to improve the luminous efficiency.
To achieve the high luminous efficiency, high VUV emission efficiency isneeded. Currently ternary gas(He-Ne-Xe) is being researched actively to
improve luminous efficiency. To find the optimal gas mixture ratio for
improving VUV luminous efficiency, we measured VUV intensities of 147
nm and 173 nm. The VUV emission characteristics of He(50%)-Ne-Xe
showed similar to He(70%)-Ne-Xe tendency. And the VUV emission
efficiency of He(50%)-Ne-Xe is nearly similar to He(70%)-Ne-Xe.
PDPp2 - 17

Influence of Oxidation of MgO Pellet on Discharging
Properties of AC PDP
B. D. Ko, J. M. Jung, H. J. Lee, C. K. Son, P. Y. Oh,
M. W. Moon, K. B. Song, J. E. Leem, Y. K. Han, S. B. Lee,S. H. Jung, N. R. Yu, J. H. Lee, E. H. Choi
Kwangwoon Univ., Korea

In order to remove Oxygen Vacancy in the MgO pellet of a raw materialof protective layer of AC-PDP, We had impregnated with O2 gas of highpressure to MgO pellet. And we measured content of Hydrogen andCarbon in the pellet by EA(Elemental Analyzer), and also we measured
film density, secondary electron emission coefficient(γ). The result is
content of impurities are lower than conventional type pellet. And thefilm from oxidation pellet, and the film density, secondary electron
emission coefficient, and lower discharging voltage than the film fromconventional type pellet.

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ThursdayPDPp2 - 18

December 8
Influence of Crystal Orientation on Secondary
Electron Emission of Polycrystalline MgO Film on
Silicon
H. K. Yu, W. K. Kim, J.-L. Lee, J. S. Kim*, J. H. Ryu*
Pohang Univ. of Sci. & Tech., Korea*LG Elect., Korea

The relationship between crystal orientation and secondary electron
emission characteristics of polycrystalline MgO films was investigated.
The secondary electron emission coefficient significantly increased withdecreasing deposition rate（
5 A ／sec). The X-ray diffraction results
showed that the (111) to (200) peak intensity ratio of MgO films
increased with deposition rate, which was due to the higher surface
energy of MgO (111) plane. MgO films predominantly (111) oriented axis
have higher work function, leading to the decrease of secondary
electron emission coefficient.

" !

PDPp2 - 19

Relationship between Density of MgO Thin Films
and Panel Properties of AC PDP
W. C. Lee, S. O. Kim, K. L. Chen*, S. Chen*, C. P. Lee*,
C. M. Huang*Nat. Chiao Tung Univ., Taiwan*Chunghwa Picture Tubes, Taiwan

The MgO thin films for AC-PDPs are deposited by e-beam evaporation
with varied oxygen flow rate and e-beam current. The panel properties
such as luminance, response time, dynamic margin, color temperature
and CIE coordinate are characterized as a function of time with theaging environment. The result reveals that a plasma display panel with
MgO thin film of lower O2 flow rate would provide better panel properties
due to higher density of MgO thin film and higher cystallinity companiedwith higher surface roughness.
PDPp2 - 20

Withdrawn

PDPp2 - 21

Physical Stability of Cathode Materials from IonBombardment in Discharge
M. L. Cha, H. S. Kim
Inha Univ., Korea
No abstract was submitted.

PDPp2 - 22

Study of Discharge for 25-in. SVGA SM-PDP without
ITO
X. Zhang, Y. Tu, Q. Li, Y. Tang, Z. Fan, L. Yang, Y. Zheng,
B. Wang
Southeast Univ., China

A 25 inch SVGA ACPDP with shadow mask (SMPDP) is presented inthis paper. Capacitance has been reduced over 20% by adopting ITOless structure, which enables high speed addressing for large capacity
display. Color purity has been improved by applying high Xe content.
Discharge characteristics are studied by capturing discharging processwith ICCD camera.

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Thu./Fri.
PDPp2 - 23L

December 8/9
Discoloration of Transparent Dielectric with Bi2O3
Glass Frit
S. J. Hwang, M. L. Cha, H. S. Kim
Inha Univ., Korea

In display industry the lead glass has been altered to lead free oxide
glass due to the environment regulation. However, thick films of lead
free oxide glass discolor after firing. The aim of the present paper is to
give the source of discoloration with evaluating the bismuth glass fritsurface. Based on our preliminary results, the lead free glass should beconsidered with designing composition, selecting a milling solution, anddealing with non-contamination.

Friday, December 9
9:00 - 10:20

Sunport Hall Takamatsu Small Hall 1

PDP4: Image Quality
Chair：
Co-Chair：C. Wedding, Imaging Syss. Tech., USA
K. Nunomura, Pioneer, Japan

PDP4 - 1:
9:00

Invited Ergonomic Requirements for Large-Area Flat
Panel TVs
M. Takahashi
Osaka Kyoiku Univ., Japan

Large-area flat panel PDP- and LCD-TVs are being used more andmore these days in home. These new kinds of TVs were evaluated fromergonomic viewpoints of display visibility and visual fatigue. The results
showed that LCD-TVs caused a noticeable luminance and chromatic
variation of the picture with viewing angle, and decrease of visual acuity
in prolonged watching of video image with rapid motion. This current
ergonomic evaluation suggests that PDP-TVs can be superior to LCDTVs as home-use.
PDP4 - 2
9:20

Driving Waveform for Reducing Temporal Dark Image
Sticking in AC PDP
C.-S. Park, B.-G. Cho, J.-H. Han, H.-S. Tae, D. H. Lee,
S.-I. Chein, B. J. Shin*
Kyungpook Nat. Univ., Korea*Sejong Univ., Korea

The experimental observation on the IR emission during a ramp-up
reset period shows that the activated MgO surface and the wall charges
accumulating on the address electrode prior to the reset period are twodominant factors for a temporal dark image sticking phenomenon. As aresult of monitoring the difference in the IR emission and luminancebetween the cells with and without image sticking, the new driving
waveforms, including pre-reset and reset waveforms, and negative-going
ramp-type X bias, are proposed for a complete elimination of thetemporal dark image sticking without deteriorating the address discharge
characteristics.

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FridayDecember 9

PDP4 - 3
9:40

Firing Voltage Fluctuation Phenomenon Caused by
Gas Density Nonuniformity in PDPs
T. Kosaka, K. Sakita, K. Betsui
Fujitsu Hitachi Plasma Display, JapanThe mechanism of temporal image sticking in PDPs is not understood in
detail. This paper shows that the temperature-dependent characteristicsof the firing voltage related to the image sticking are derived from gas
density nonuniformity in a panel, and its principle is based on the
Paschen’s law. Using this mechanism, we found that the temporal image
sticking can be controlled by changing the gas pressure in a panel.
PDP4 - 4
10:00

Discharge Characteristics under Various Panel
Temperature and Modified Ramp-Reset Waveform
Robust for Variable Panel Temperature
S.-K. Jang, H.-S. Tae, S.-B. Kim*, E.-Y. Jung*, K.-J. Suh*,
J.-C. Ahn*, E.-G. Heo*, B.-H. Lee*, K.-S. Lee*
Kyungpook Nat. Univ., Korea*Samsung SDI, Korea

The changes in the discharge characteristics such as a firing voltage
and IR emission among the three electrodes are examined relative tothe low or high panel temperature ranging from -10 to 80℃ based on
the Vt close curve measurement method. It is observed that thevariation in the panel temperature has a significant influence on thesurface discharge between the MgO surfaces rather than the plate gap
discharge between the MgO and phosphor layers. Based on thisexperimental observation, the modified reset waveform that alleviates
the surface discharge during a ramp-up period is proposed. As a resultof...

----- Break -----

10:40 - 11:55

Sunport Hall Takamatsu Small Hall 1

PDP5: Novel PDPs
Chair：
Co-Chair：

R. L. Johnson, Info. Tech., USA
R. Murai, Matsushita Elec. Ind., Japan

PDP5 - 1:
10:40

InvitedTechnologies for Cost Competitive PDP

W.-S. JangLG Elect., Korea

In order to reduce the cost of PDP(Plasma Display Panel)materials andprocess should be innovated as well as PDP cell design and driving
circuitries. By adopting new materials and process, the cost can be reduced to half of current cost, and it will ensure the competitiveness inthe market.

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FridayDecember 9

PDP5 - 2
11:00

Electronic Drive Technique for Plasma-Sphere
Displays
C. Wedding, J. Guy, E. Peters
Imaging Syss. Tech., USA

Imaging Systems Technology (IST) is engaged in the research anddevelopment of large flexible monochrome and color displays using
Plasma-spheres as the pixel elements. Plasma-spheres are hollow
spheres formed of glass containing an ionizable gas. The Plasmasphere is a closed cell structure that provides unique advantages over a
conventional open cell plasma display or a gas plasma tube display. In
this paper, IST will report on various drive techniques applied to the
Plasma-sphere display.
PDP5 - 3
11:20

Fabrication of 25-in. SVGA SMPDP Panel
Q. Li, X. Zhang, Y. M. Tang, Z. W. Fan, Y. S. Zheng,
B. P. Wang
Southeast Univ., China

The fabrication techniques of the 25-inch SVGA SMPDP panel arestudied in this paper. The bus electrode without ITO was employed in
the front substrate, which is made by Aluminum with thin film processinstead of conventional Ag with thick film process. Due to thisamelioration, the uniformity of the dielectric layer had been improved.
Only five fabrication processes, including photolithography, were needed
during the manufacture of the front/rear substrate. The characteristics ofthis panel were also presented in order to verify the new fabrication
techniques.
PDP5 - 4L
11:40

A New Improved Reset Waveform for High Dark
Room Contrast Ratio and Reduction of the ResetTime in AC PDPs
I.-M. Lee, J.-Y. Kim
Sejong Univ., Korea

A new improved reset waveform for the high contrast ratio and reductionof the reset time is presented. Except the first subfield, a new improved
reset waveform with only ramp-up period is adopted. The experimentallymeasured background luminance was zero whereas the conventional
reset method generated background luminance of 0.40 cd/m2. Thus, we
obtained infinitely high dark room contrast ratio. The new improved reset
waveform reduced the required time for reset per subfield to 165us
except the first subfield.

----- Lunch -----

14:00 - 15:25

Sunport Hall Takamatsu Small Hall 1

PDP6: High Resolution Technologies
Chair：
Co-Chair：B. P. Wang, Southeast Univ., China
H. Uchiike, Japan119

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FridayPDP6 - 1:
14:00

December 9
Invited Spatiotemporal Behavior of Exited Atoms in
Discharge Cell of High-Resolution AC PDP
K. Ishii, Y. Hirano, Y. Murakami, K. Tachibana*NHK, Japan*Kyoto Univ., JapanThe spatiotemporal behavior of excited Xe atoms which leads to the
VUV emission was estimated by a microscopic laser absorption
spectroscopy with a 100 μm horizontal cell pitch coplanar structure ACPDP. The metastable Xe*(1s5)atoms converted to Xe2* dimers in a shorttime, thus stronger VUV emissions were estimated at higher gas
pressure. In addition, it was found that the gap length-related alterationof the luminance characteristics was dependent on the enlarging excitedatoms formation area on the anode side.
PDP6 - 2
14:20

Arrays of Microcavity Plasma Devices: Concepts for
Future PDPs
S.-J. Park, K.-F. Chen, S.-H. Sung, T. Spinka, J. G. Eden
Univ. of Illinois, USA

Microcavity plasma devices having characteristic dimensions below 100
μm have been investigated as a candidate for the next generation ofplasma displays. Arrays of inverted pyramid microcavity devices,fabricated in Si with emitting apertures of (50 μm)2 and designed for AC
excitation, demonstrate a luminous efficacy above 6 lm/W at pressures
beyond one atmosphere of Ne/Xe mixtures. Also a new ceramic
multilayered device has been fabricated and characterized. Stablemicrodischarges with high spatial-contrast are observed in 100~200 μm
diameter microcavities.
PDP6 - 3L
14:40

50-in. 1080p High-Definition PDP TV
T. Komaki
Pioneer, Japan

50-inch 1080p high-definition plasma TV is newly developed. The cellsize is 0.191(H) x 0.575(V) mm. Luminous efficacy is about 1.8 lm/W,
because of using CEL (Crystal Emissive Layer structure) technology. It
is effective to improve discharge probability, static delay time andluminous efficacy. Gray scale is almost the same as that of wide-XGA.
PDP6 - 4L
14:55

High-Contrast 55-in. Full High-Definition PDP
M. Onozawa, T. Matsui, K. Ohira, M. Sawa, H. Harada,
H. Ikeda, M. Tajima, T. Kishi
Fujitsu Hitachi Plasma Display, Japan

We have developed a 55-inch full high-definition (full HD) PDP with 2.07
M (1920×1080) pixels. We designed new panel and increased drive
frequency to obtain high luminance. A high-contrast reset system was
employed to obtain a high contrast ratio. We have achieved the whitepeak luminance of 960 cd/m2 and the black luminance of 0.17 cd/m2,
which leads to a contrast ratio of 5600:1.

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FridayDecember 9

PDP6 - 5L
15:10

65 in. Full-Spec HD PDP
I. Kawahara, S. Okumura, H. Taniguchi, H. Setoguchi,
Y. Tsujita, R. Murai
Matsushita Elec. Ind., Japan

Having developed a 65” Full HD PDP(1920 x 1080 progressive), welaunched it onto the market this October as our first consumer product.
We describe here the 65” full HD panel structure, comparing it with thelatest 65” HD(1366 x 768)panel. We also discuss the issues of picture
quality from a new aspect, focusing on characteristics such as moving
definition and contrast ratio in which it is superior to LCDs.
Author Interviews
17:10 - 18:10

Sponsor:Plasma Display Technical Meeting

PDP International Forum '05
10:00 - 15:30, Saturday, Dec. 10
History Museum (5-min walk from IDW venue)
Meet Prof. Don Bitzer, the inventor of PDP, at theluncheon with wine. Join discussion on "how todominate the TV world" with internationallywell-known scientists. Everyone is welcome.
inquiry: pdp-forum@townsend.ee.uec.ac.jp

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Wednesday

December 7

Workshop on
EL Displays, LEDs and Phosphors
Wednesday, December 7
13:40 - 15:20

ANA Hotel Clement Takamatsu Hiten 1

PH1: Phosphors in General
Chair：
Co-Chair：Y. Nakanishi, Shizuoka Univ., Japan
S. Itoh, Futaba Corp., Japan

PH1 - 1:
13:40

Invited Pictures of The Future - A Specific Approach
to Industrial Foresight: Application Potential toMaterials and Active Displays ?
D. Theis
Siemens AG, Germany

Reliable assessments of future developments in technologies andmarkets are necessary for industry. As a complementary approach tothe frequently employed roadmapping a Siemens foresight method
identifying comprehensive megatrends in various business segments
called “Pictures of the Future” is explained. This method helps
identifying future needs, requirements and applications including display
technologies from a system integrator’s point of view.
PH1 - 2
14:10

Correlation between Cathodeluminescence
Enhancement and Surface Charges of ZnS:Mn Thin
Film Phosphor Induced by Ultrasonication Treatment
D. C. Lee, J. H. Kang, S. J. Yun*, S. A. Bukesov**,
D. Y. Jeon
KAIST, Korea*Elect. & TeleCommun. Res. Lab., Korea**Seoul Semiconductor, Korea

Correlation between cathodoluminescence (CL) enhancement andsurface charges of ZnS:Mn thin film phosphor after ultrasonication
treatment was investigated using surface analysis technique. After
ultrasonication treatment in KOH solutions, CL property of ZnS:Mn
phosphor film was improved, but photoluminescence (PL) was not.
Luminescence properties indicated that CL enhancement was mostly
caused by surface charges formed by ultrasonication treatment. Throughspecified surface analysis technique, it was confirmed that CL property
was improved with the amount of surface charges.

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Wednesday

December 7

PH1 - 3
14:30

Luminescent Properties of ZnO:Er Thin Films
Prepared by RF Magnetron Sputtering
H. Song, Y. J. Kim
Kyonggi Univ., Korea

ZnO:Er films were deposited on c-plane sapphire substrates by rf
magnetron sputtering, and annealed at 700℃ in different atmospheres,
air and H2. The effects of sputtering parameters and the annealing
conditions on the luminescence were investigated. Highly c-axis oriented
ZnO:Er films could be obtained on c-plane sapphire substrates. They
showed emission bands at around 465nm and 525nm, while ZnO:Er
powders at 520nm and 575nm. Luminescent properties rarely depended
on the crystallinity of films, but were strongly affected by annealing
atmosphere.
PH1 - 4:
14:50

Invited Crystal Chemistry, Defect Chemistry, andDegradation Processes in BaMgAl10O17:Eu2+
A. L. Diaz, B. Dawson
Central Washington Univ., USA

It is well known that the color and efficiency of BaMgAl10O17:Eu2+(BAM)
degrade after heating in air or after exposure to vacuum ultraviolet(VUV)
radiation. Research conducted in the last decade has led to a fairly
comprehensive understanding of these degradation processes and theirrelationship to the crystal and defect chemistry of BAM. These
connections are discussed, and attempts to improve the blue phosphor
for VUV applications are described.
Author Interviews
17:30 - 18:30

15:00 - 17:00

Citizen’s Gallery

Poster PHp: Phosphors
PHp - 1

Effects of Surface Modification on
Photoluminescence Properties of LaPO4:Ce,Tb
Nano-Phosphor Synthesized by Solvothermal
Reaction
F. Nishimura, T. Isobe
Keio Univ., Japan

LaPO4:Ce,Tb nano-phosphors are synthesized from lanthanum acetate,cerium acetate, terbium acetate and trimethyl phosphate by thesolvothermal reaction. The surface modification of LaPO4:Ce,Tb nanophosphor powder by lauryl phosphate increases the PL intensity by afactor of 18. The surface modification is effective for LaPO4:Ce, but not
for LaPO4:Tb. The surface-passivation plays a significant role in the
suppression of energy loss and the higher site-symmetry around Ce3+.

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Wednesday
PHp - 2

December 7
Enhancement of Photoluminescence Properties of
Y2O3:Eu3+ Nanophosphor by Pre-Dispersing
Synthetic Method with Organic Solvent
S.-J. Hong, M.-G. Kwak, J.-I. Han
Korea Elect. Tech. Inst., Korea

In this work, photoluminescence properties of the Y 2 O 3 :Eu 3+
nanophosphor was enhanced by applying newly developed predispersing synthetic method with organic solvent. The particle size wassmaller than 4 nm, and crystallinity of I(222)/I(511) was enhanced to10.5. Also, using the 250 nm ultraviolet source, the highly intensive
photoluminescence properties could be achieved at 611 nm with thepre-dispersing synthetic method with organic solvent.
PHp - 3Synthesis of SrY2S4:Eu Red-Emitting Phosphor
A. Mimoto, H. Kominami, K. Hara, Y. Nakanishi,
Y. Hatanaka*
Shizuoka Univ., Japan*Aichi Univ. of Tech., Japan

SrY2S4:Eu red emitting phosphor was prepared using solid phasereaction. SrY2S4 phase was obtained by XRD measurements, however,SrS and Y2O2S phases was also appeared. The powders were fired in
active-carbon and sulfur mixed atmosphere, and changed the ratio ofactive-carbon and sulfur. The broad spectrum peaked around 640 nm
from Eu2+ transition was obtained on PL measurement excited by 325
nm of He-Cd laser or Xe lamp.
PHp - 4

Photoluminescent Properties of Eu-Activated
Y2O3-SrF2 Powders
Y. Tsuchiya
NHK, Japan

Eu 3+ -activated Y 2 O 3-SrF 2 powders are fabricated for the fullcompositional range of Y2O3-SrF2. Their photoluminescent andcrystallographic properties are investigated. Powders of 2 to 60% SrF2
concentration show photoluminescence more than two times stronger
than the Sr-undoped Y2O3:Eu specimen. Also studied are the effects ofsuccessive sintering on the luminance, Eu concentrations on thechromaticity, and boron codoping on the porosity.
PHp - 5

New Silicate Phosphors for White LED
K. Toda, Y. Kawakami, S. Kousaka, Y. Ito, A. Komeno,
K. Uematsu, M. Sato
Niigata Univ., Japan

This study specifically addresses development of new silicate phosphors
for a white LED. In the europium doped A2O-BO-SiO2 (A = Li+, Na+; B =Ca2+, Sr2+, Ba2+) ternary system, three LED phosphor candidates -Li2
SrSiO 4 :Eu 2+ , Ca 3 Si 2 O 7 :Eu 2+ and Na 2 SrSi 2 O 6 :Eu 3 + were found.
Luminescent properties under near UV and visible excitation were
investigated for the new Eu2+ and Eu3+ doped LED silicate phosphors.
The new phosphor has a relatively strong absorption band in a longwavelength region.

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Wednesday
PHp - 6

December 7
Preparation of La2O2S:Eu Thin Film Phosphors for
Near UV Excitation
M. Kato, H. Kominami, K. Hara, Y. Nakanishi, Y. Hatanaka*
Shizuoka Univ., Japan*Aichi Univ. of Tech., Japan

La2O2S:Eu thin films for near ultraviolet(NUV)excitation were preparedby sulfurization of La2O3:Eu thin film deposited by EB evaporation onquartz substrate. La2O2S phase was obtained by sulfurization processusing annealing in H2S atmosphere above 30 minutes. The red-emissionof La2O2S:Eu was observed under excitation by 325 nm of He-Cd laser.
The intensity of the film annealed 30 minutes was the highest.
PHp - 7

Synthesis and Luminescence Properties of New LED
Yellow Phosphor Li2SrSiO4:Eu2+
Y. Ito, M. Kawamoto, K. Uematsu, K. Toda, M. Sato
Niigata Univ., Japan

Divalent europium activated Li2SrSiO4 was investigated as a phosphor
for the application to a white emitting light source using a blue LED. The
Li2SrSiO4:Eu2+ phosphor was efficiently excited by visible light (400 480 nm), yielding a yellow emission at 570 nm. The phosphor showed agood thermal luminescence property at high temperatures. The yellow
phosphor, Eu2+ -activated Li2SrSiO4, is a promising material for LED
applications because of its broad excitation band, excellent emission
color and high thermal stability.
PHp - 8Luminescent Properties of (Sr1-xMx)3SiO5:Eu2+(M =Ca, Ba) Phosphor for White Emitting Light Source
Using Blue/Near UV LEDs
H. S. Jang, W. B. Im, D. Y. Jeon
KAIST, Korea

Eu2+ doped Sr3SiO5 was investigated as a phosphor for the application
to white emitting light source using blue/near ultraviolet (n-UV) LEDs.
Sr3SiO5:Eu2+ phosphors were synthesized by solid state reaction method
and their luminescent properties were investigated. Sr3SiO5:Eu2+
phosphor showed a bright orange-yellow emission under the excitation
with a blue radiation and or n-UV radiation. The blue LED pumped andn-UV LED pumped Strontium silicate white light sources were fabricatedand their luminescent properties were investigated.
PHp - 9In Situ Neutron Powder Diffraction Analyses of
BaMgAl10O17:Eu2+ Phosphor with Increasing
Temperature
W. B. Im, Y.-I. Kim*, D. Y. Jeon
KAIST, Korea*Korea Res. Inst. of Standards & Sci., Korea

In this study, in situ neutron powder diffraction (NPD) analyses werecarried out on commercial BaMgAl10O17:Eu2+ (BAM) phosphor withincreasing temperature for the first time. The structural parameters of
BAM were successfully determined by the Rietveld refinement against
NPD data at room temperature, 500, 700, and 900 ℃， respectively.
And nuclear density of 2d site occupying Eu atoms was calculated using
maximum entropy method.
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Wednesday
PHp - 10December 7
Sites of Doped Divalent Europium Ions in BAM
Investigated by X-Ray Near Edge Structure
Measurement
I. Hirosawa, T. Honma, K. Kato, N. Kijima*, Y. Shimomura*
Japan Synchrotron Radiation Res. Inst., Japan*The Mitsubishi Chem., Japan

We performed Eu LIII XAFS measurement of BAM and E2O3 to discussoccupation site of doped europium. Fourier-filtered EXAFS wiggle could
be reproduced by both BR and a-BR sites occupations introducing shiftsof nearest neighboring oxygen atoms from their ideal positions.
Simulated XANES spectrum based on BR occupation better fitted to theobserved one than that of a-BR site occupation. Thus, it can beconsidered that doped europium dominantly occupies BR site in BAM.
PHp - 11

XAFS Study of Luminescent Center in Blue PDP
Phosphor CaMgSi2O6:Eu
T. Honma, T. Kunimoto*, S. Yamaguchi**, Y. Shao**,
K. Ohmi**, H. Kobayashi*
Japan Synchrotron Radiation Res. Inst., Japan*Tokushima Bunri Univ., Japan**Tottori Univ., JapanEu luminescent center in blue PDP phosphor CaMgSi2O6:Eu (CMS) has
been investigated by X-ray absorption fine structure analysis. To clarify
the correlation between Eu2+/Eu3+ ratio in CMS and synthesis
parameters such as Eu concentration and flow rate of reducing gas, theEu L3-edge X-ray absorption near edge structure spectra has been
analyzed.
PHp - 12Synthesis and Characterization of Ca(La,Gd)4Si3O13:
Tb Green PDP Phosphor for Xe2 Excimer Excitation
A. Yamane, S. Yamaguchi, T. Kunimoto*, Y. Shao, K. Ohmi,
H. Kobayashi*
Tottori Univ., Japan*Tokushima Bunri Univ., Japan

Luminescent characteristics of Ca(La,Gd)4Si3O13:Tb phosphor havebeen investigated. This phosphor shows the green emission due to Tb3+
with the CIE color coordinate (x, y) = (0.337, 0.562). The
photoluminescence (PL) peak intensity is comparable with Zn2SiO4:Mn
commercial phosphor. The PL excitation band lies continuously in the
wavelength region from 130 to 250 nm, so the phosphor is a candidate
for a green PDP phosphor for Xe2 excitation.

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Wednesday
PHp - 13

December 7
Effect of ZnS Buffer Layer on Luminescent
Characteristics of Y2O2S:Eu TFEL Devices Preparedby Sulfurization of Y2O3:Eu
N. Kurihara, H. Kominami, Y. Nakanishi, K. Hara,
Y. Hatanaka*
Shizuoka Univ., Japan*Aichi Univ. of Tech., JapanY2O2S:Eu TFEL device on Si substrate prepared using sulfurization of
Y2O3:Eu thin film was studied. EL emission was obtained when theemitting layer was sandwiched by ZnS buffer layers. It indicates that ZnS
buffer layers were contributed as the layer for generation, accelerationand injection of hot-electron into Y2O2S:Eu emitting layer.
PHp - 14

Flexible Inorganic Thin-Film Electroluminescent
Devices Using a Flexible Ceramic Substrate
T. Miyata, Y. Mochizuki, S. Tsukada, T. Minami
Kanazawa Inst. of Tech., Japan

Flexible inorganic thin-film electroluminescent(TFEL)devices have been
newly developed. High-luminance thin and flexible EL lamps have been
demonstrated using two types of double-insulating-layer TFEL device
structures, consisting of a sulfide or oxide phosphor emitting layer andinsulating layers, fabricated on a flexible oxide ceramic sheet with athickness of approximately 50 or 100 μm. In particular, stable operation
at high temperatures above 200℃ was obtained in flexible EL lamps
fabricated using oxide phosphors.
PHp - 15

Blue and Red Dichromatic Luminescence of 12CaOAl2O3-Based Phosphor with Subnano Cage Structure
T. Nagata, H. Murakami
ULVAC, Japan

12CaO·7Al2O3 (C12A7) has subnano atomic cages in its crystal
structure. Here we report the successful synthesis of a phosphor with anentirely new cage structure using this C12A7 oxide. This phosphor
showed blue and red dichromatic luminescence which was notpreviously known in conventional phosphors. Moreover, the blue
displayed higher chromaticity than that of the conventional phosphor
used in CRT.
PHp - 16

Synthesis and Characterization of Sol-Gel Derived
Y2O3:Eu Thick-Film Phosphors
J. Y. Cho, K. Y. Ko, Y. R. Do
Kookmin Univ., Korea

Y2O3:Eu thick-film phosphors were grown on quartz or sapphire
substrates using a simple spin coating technique of semi-gel solution.
Optical and structural properties of Y 2 O 3 :Eu thick-films werecharacterized by XRD, AFM, SEM, PL and CL. By using sol-gel process,we prepared single-phase Y2O3:Eu thick-film phosphors which havegood optical properties, high crystallinity and crack-free morphology withthickness of ~2μm.

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ThursdayDecember 8

Thursday, December 8
9:00 - 10:30

ANA Hotel Clement Takamatsu Hiten 2PH2: Phosphors for LEDs
Chair：
Co-Chair：D. Theis, Siemens AG, Germany
M. Tamatani, Toshiba, JapanPH2 - 1:
9:00

Invited Nitride and Oxynitride Phosphors and Their
Application to White Light-Emitting Diode Lamps
K. Sakuma, N. Hirosaki*, N. Kimura, R.-J. Xie*,
S. Hirafune, Y. Yamamoto*, T. Suehiro*
Fujikura, Japan*Nat. Inst. for Materials Sci., Japan

Recently developed nitride / oxynitride phosphors are promising
candidates for a white light-emitting diode. β-SiAlON:Eu, Ca-α-SiAlON:
Eu and CaAlSiN3:Eu phosphors are able to be excited by blue light andemit green, yellowish orange and red light, respectively. High brightness
warm-white LED lamps of over 50 lm/W luminous efficacy have beenrealized by combination of a blue LED die and Ca-α-SiAlON:Eu. Highcolor-rendering index white LED lamps of over Ra 80 have been also
realized using the three color phosphors.
PH2 - 2
9:30

Heterostructures of ZnO-Related Semiconductor
Materials for Visible-Light Emitting Devices
A. Nakamura, K. Yamamoto, J. Ishihara, T. Aoki, J. Temmyo
Shizuoka Univ., Japan

Wurtzite Zn1-xCdxO / ZnO heterostructures were successfully grown by
remote plasma enhanced metalorganic chemical vapor deposition (RPEMOCVD ) and were investigated by photoluminescence ( PL )spectroscopy. In the double heterostructures consisting of Mg0.036Zn0.964
O / Zn0.77Cd0.23O / Mg0.036Zn0.964O, temperature and excitation intensity
dependence of PL spectra were examined. The PL emission ischaracterized as localized and free exciton emission. A liner
dependence with a slope near unity is obtained from the excitation
dependence of the PL intensity. Blue-green emission (2.78eV) was
demonstrated from the double-heterostructure at room temperature.

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ThursdayDecember 8

PH2 - 39:50

Photoluminescent Properties of (Sr1-xBax)S:Eu RedEmitting Powder for NUV Excitation
H. Kominami, K. Sugiura, Y. Nakanishi, K. Hara,
Y. Hatanaka*
Shizuoka Univ., Japan*Aichi Univ. of Tech., Japan(Sr1-xBax)S:Eu powder prepared by changing the ratio x and firingcondition were investigated. XRD patterns fired in active carbon showsonly(Sr, Ba)S:Eu phase, however, that fired in S shows(Sr, Ba)SO4
phase in addtion of(Sr, Ba)S phase. Photoluminescent spectra excitedby 380nm of Xe lamp show peaks from 607 to 680nm as the changing x
ratio. At x=0.25, emission peaks of both powder showed 645nm.
Interestingly, the intensity of these powders were quite different, thepowder fired in S showed 4 times higher than that fired in active carbon.
The powder in S includes much oxide atoms, then it indicates...
PH2 - 4
10:10

Synthesis and Luminescent Properties of Eu Doped
Calcium Sulfoapatite
S. H. Jung, J. W. Kim, Y. J. Kim
Kyonggi Univ., Korea

Eu doped calcium sulfoapatite was synthesized by firing the mixture of
CaCO3, Ca2P2O7, and Eu2O3 in the electric furnace at 900℃ in H2
atmosphere. According to XRD, Eu was successfully substituted for Ca,
therefore Ca9.12Eu0.88(PO4)6S1.44 phase was observed as well as Ca10(PO4)6S. However, strong XRD peaks of the secondary phase, Ca3(PO4)2
also appeared. PL properties were measured for the first time. PL
spectra of Ca9.12Eu0.88(PO4)6S1.44 exhibited a strong red emission ataround 650nm with the excitation wavelength of 470 nm.

----- Break -----

10:50 - 12:25

ANA Hotel Clement Takamatsu Hiten 2

PH3: ELDs (1)Chair：
Co-Chair：X. Wu, iFire Tech., Canada
N. Miura, Meiji Univ., Japan

PH3 - 1:
10:50

Invited A Study of Electroluminescent Process andEfficiency in ZnS Particles
K. Ogawa, Y. Tadakuma, K. Kawato, M. Nakanishi,
Y. Miyashita, S. Yamashita
Fuji Photo Film, Japan

We elucidated behavior of electrons and holes in ZnS:Cu,Cl phosphor
particles for dispersion-type electroluminescence (EL) devices. Electrons
trapped at donor (Cl-) sites recombine with holes trapped at acceptor(Cu+) sites in 0.5 ms after they are trapped by the Cl centers in 1μs andmove between the conduction band of ZnS and the Cl sites. We
understand that decrease in luminous efficiency in high-brightness range
arises from brightness saturation at luminous centers nearby electronemitting sites known as CuxS.
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ThursdayPH3 - 2
11:20

December 8
Red Emitting Ba2ZnS3:Mn Thin Film
Electroluminescent Devices Prepared by ElectronBeam Evaporation
K. Hara, M. Yamasaki, Y. Ouchi, K. Ohmi, H. Kobayashi*
Tottori Univ., Japan*Tokushima Bunri Univ., Japan

Ba2ZnS3:Mn thin film electroluminescent (EL) devices have been
prepared by electron-beam evaporation method and post-deposition
annealing. The TFEL devices show a reddish-orange EL emission with
the CIE color coordinates of (x, y) = (0.60, 041). The luminance andefficiency at 1 kHz are 140 cd/m2 and 0.05 lm/W, respectively. Since Ba2
ZnS3:Mn thin films are enough crystallized at 600℃, Ba2ZnS3:Mn is apromising red EL phosphor for low temperature process.
PH3 - 3
11:40

Blue Luminescence from Eu-Activated BaO-BasedMulticomponent Oxide Phosphor Thin Films
T. Miyata, Y. Mochizuki, T. Minami
Kanazawa Inst. of Tech., Japan

Intense photoluminescence and electro- luminescence in purplish blue
emission were observed in newly developed phosphorous-treated(BaOGa2O3):Eu and(BaO-In2O3):Eu and Ba0.638Mg0.276Al10.724O17:Eu thin films
that were first deposited on thick BaTiO3 ceramic sheets using a
combinatorial r.f. magnetron sputtering deposition method and thenpostannealed in an Ar+H 2 (10%)gas atmosphere. Typical CIE
chromaticity coordinates for blue emission from Eu-activated oxide
phosphor thin films were(x=0.165, y=0.066).
PH3 - 4L:
12:00

Invited CdSe and InGaN quantum dots for shortwavelength light emitters
D. Hommel, A. Gust, T. Passow, M. Klude, T. Yamaguchi,
E. Roventa, A. Pretorius, R. Kr ger, K. Sebald, J. Gutowski
Univ. of Bremen, Germany

We will compare CdSe/ZnSSe quantum dot laser emitting at 560 nm toa LD emitting at the same wavelength with a quarternary ZnCdSSe
quantum well as active region. Furthermore, the hope of reaching thegreen spectral region for nitride-based LDs is connected with InGaN
quantum dots. We will show that under modified capping conditions
optically active InGaN dots can be obtained giving raise to the hope fora nitride-based quantum dot laser.

----- Lunch -----

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ThursdayDecember 8

13:40 - 15:05

ANA Hotel Clement Takamatsu Hiten 2

PH4: ELDs (2)Chair：
Co-Chair：T. Miyata, Kanazawa Inst. Tech., Japan
K. Ohmi, Tottori Univ., Japan

PH4 - 1:
13:40

Invited Recent Development of Large-Area TDEL Flat
Panel Display
X. Wu, D. Carkner, I. Yoshida*, H. Hamada*, K. Oda**,M. Kutsukake**iFire Tech., Canada*Sanyo Elec., Japan**Dai Nippon Printing, Japan

Thick-Dielectric Electroluminescent(TDEL)technology is one of the mostsuitable flat panel displays for HDTV application. TDEL has achievedlarge screen size and full color capability with a simple and solid-state
structure. A low-cost, light weight, and thin-shape HD-TV will beachieved by TDEL technology. Recently, a pilot production line for 34inch, wXGA TDEL panels has been started up. The newly developed
production system includes a large-area sputtering tool for highbrightness BaAl2S4:Eu blue phosphor.
PH4 - 2
14:10

Blue Emitting Barium Thioaluminate Phosphors by
Sputtering of Alloy Targets
J. Acchione, A. Kosyachkov
iFire Tech., Canada

A process is developed for fabrication of thin film Ba-Al-S:Eu phosphorsfor inorganic full-color Thick Dielectric Electroluminescent (TDEL)
displays. It involves reactive sputtering of a single Ba-Al-Eu alloy targetin H2S containing atmosphere. The phosphors exhibit EL-luminance overa thousand cd/sq.m at the CIE color coordinates of X=0.14 and Y=0.110.13. The process is evaluated as a prospective one for commercial
production of TDEL panels.
PH4 - 3
14:30

Blue-Emitting BaAl2S4:Eu ElectroluminescentThin-Films Grown by MBE
K. Tanaka, S. Okamoto
NHK, Japan

We have investigated the crystallinity of blue-emitting BaAl2S4:Eu
electroluminescent(EL)thin films grown by molecular beam epitaxy(MBE)system. As-grown thin-film shows pure blue EL, and the peakwavelength of spectrum is at 474 nm. The oxygen in the thin films isunder the detectable level. The co-doping of flux-agent has greatly
improved the crystallinity of thin films. The FWHM value of the(121)X-ray
diffraction line is 0.156°， which is the narrowest value ever observedfor BaAl2S4:Eu thin films.

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Thu./Fri.

December 8/9

PH4 - 4L
14:50

Blue Electroluminescent Devices Utilizing Tm DopedZnS Nanocrystals as Emission Layer Material
D. Adachi, H. Haze, H. Shirahase, T. Toyama, H. Okamoto
Osaka Univ., Japan

Blue emitting thin-film EL (TFEL) device compromised of Tm3+ doped
ZnS nanocrystals (NCs) has been investigated. Compared with theconventional double-insulating-layer-type ac TFEL device, intensity ratioof blue to infrared emission band due to the intra-shell transitions ofTm3+ is 10 times improved. Moreover, utilizing ZnS NCs doped with
Tm3+,Tb3+ and Mn2+ as the blue, green and red emission layer material,
respectively, full-color TFEL device is demonstrated.
Author Interviews
17:30 - 18:30

Friday, December 9
10:50 - 11:50

ANA Hotel Clement Takamatsu Hiten 2

FED2/PH5: FEDs and Phosphors for FEDs
Chair：
Co-Chair：

M. Nakamoto, Shizuoka Univ., Japan
T. Hisamune, Kasei Optonics, Japan

FED2/PH5 - 1: Invited High-Brightness, High-Resolution, High10:50
Contrast and Wide-Gamut Features of SurfaceConduction Electron-Emitter Displays
Y. Ishizuka, T. Oyaizu, T. Oguchi, H. Hoshi, E. Yamaguchi
SED, Japan
Surface-conduction Electron-emitter Displays (SEDs) have many
advantages for application to TVs. Surface Conduction electron Emitters(SCEs) provide the benefits of high brightness and high resolution owing
to their focused and controlled electron beams. In addition, non-linear IV characteristics of the emitters enable to express deep black.
Furthermore, phosphor screens with color filters realize a CRT-gradecolor gamut. Combination of the emitter and the screen offers theexcellent performance for TV application.
FED2/PH5 - 2
11:20

Development of Large Size CNT-FED
T. Tonegawa, M. Taniguchi, S. Itoh, K. Nawamaki,
Y. Marushima, Y. Kubo, Y. Fujimura, T. Yamaura
Futaba, JapanThe carbon nanotube (CNT) FED panel for information board wasdeveloped. This large size display panel realizes a lightweight, wideviewing angle and low power consumption. A unit panel size is 96 x 96mm, thickness is about 2.2 mm, anode voltage is 120 V, and spot
brightness is more than 1,000 cd/m2. The panel’s emitter is formed byscreen-printing of multi walled CNT which were made by arc-discharged
method. FEDs will be used for not only the TV applications but also
large-size panels for public information.
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FridayDecember 9

FED2/PH5 - 3
11:35

Full Color Graphite Nanofiber FED with 0.15mm Pixel
Pitch
K. Hagiwara, T. Takei, T. Sakai, T. Muroi, M. Ushirozawa,T. Yamamoto
NHK, JapanTo achieve a fine pitch FED, a GNF-FED with focus electrode wasdeveloped. The new fabrication process was developed and the growth
conditions of GNF were optimized. The dependence of focus voltage onelectron beam divergence was examined and the beam focusing was
confirmed. Assembling with the RGB phosphor screen, full-color video
was successfully reproduced on the GNF-FED with 0.15-mm pixel pitch.
Author Interviews
17:10 - 18:10

Sponsors:
The 125th Research Committee on Mutual Conversion between Lightand Electricity, JSPS
Phosphor Research Society, The Electrochemical Society of Japan

Takamatsu Festival
Takamatsu Folk Entertainment
Friday, December 9
12:20 – 13:30(before Outstanding Poster Paper Awards)
Tamamo (3F),
ANA Hotel Clement Takamatsu
See page 9 for details
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FridayDecember 9

Workshop on Field Emission Display
Friday, December 9
9:00 - 9:10

ANA Hotel Clement Takamatsu Hiten 2

Opening
Opening Remarks
9:00
M. Takai, Workshop Chair
9:10 - 10:35

ANA Hotel Clement Takamatsu Hiten 2

FED1: CNT Emitters and FEDs
Chair：
Co-Chair：J. Ishikawa, Kyoto Univ., JapanY. Iguchi, Sony EMCS, Japan

FED1 - 1:
9:10

Invited 6-in. Video CNT-FED with Improved
Uniformity
J. Dijon, C. Bridoux, A. Fournier, T. G. De Monsabert,
B. Montmayeul, M. Levis, D. Sarrasin, R. Meyer
LETI, France

A model of display uniformity based on the physics of CNT emission ispresented. This model is in good agreement with our experimental
results. It shows that there is no intrinsic limitation to overcome in orderto achieve 1% uniformity on HDTV panel using the cathode structuredeveloped at LETI and spaghetti like CNT material. Uniformity results
achieved on 1cm2 displays are already better than 2% and a 6 inches
CNT display with uniformity within 5% is demonstrated.
FED1 - 2:
9:30

Invited

Narrow-CNT Emitter for High-Resolution FED

H. Kurachi, S. Uemura, J. Yotani, T. Nagasako, H. Yamada,T. Ezaki, T. Maesoba, T. Nakao, M. Ito, A. Sakurai,
H. Shimoda, Y. Saito*, H. Shinohara*
Noritake, Japan*Nagoya Univ., Japan

A high-resolution carbon nanotube (CNT) -field emission display (FED)
was investigated for graphic-displays. The sub-pixel size was 0.2mm x
0.6mm. We developed a new growth technique of narrow carbon
nanotubes (CNTs) on metal-base electrode by thermal-CVD to reducethe driving voltage of high-resolution CNT-FED. The diameter of CNT
was reduced down to 6-10nm. The emission was extremely increased atlower voltage, compared to the conventional characteristic of 40nmdiameter CNT-layer.

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FridayDecember 9

FED1 - 3
9:50

Improvement of Emission Distribution by Electrical
Activating Cathode Surface for CNT-FED
S. Watanabe, T. Shiroishi, Y. Suzuki, K. Nishimura,T. Sawada, M. Fujikawa, A. Hosono, S. Nakata, S. Okuda
Mitsubishi Elec., Japan

A uniform emission distribution of the panel is necessary for picture
quality of CNT-FED. The effect of aging by the pulse current was
examined in the test panel of the diode structure. As the result of theinvestigation, an electrical activating the cathode surface by emission
current is effective for improving the emission uniformity. It is found thatuniformity of the CNTs height distributions brings about improvement ofluminescence distribution.
FED1 - 4
10:05

Surface Treatment of CNT Cathodes Using KrF
Excimer Laser for FEDs
T. Honda, C. B. Oh, K. Murakami, K. Ohsumi, S. Abo,
F. Wakaya, M. Takai
Osaka Univ., Japan

CNT cathodes prepared with and without glass fillers were irradiated by
a KrF (248 nm) excimer laser light with a homogeneous beam intensity
profile at various laser power densities. The electron emission
characteristics were greatly improved by adding glass fillers to the paste.
The turn-on-field became as low as 0.34 V/μm and the emission density
became as high as 5.88 mA/cm2 at a field of 2 V/μm by KrF laser
irradiation.
FED1 - 5
10:20

Estimate of Structural Modification of Laser
Irradiated CNTs by Seppen-Katamuki Analysis
Y. Kawamura, Y. Gotoh, T. Niiya, H. Tsuji, J. Ishikawa,
A. Hosono*, S. Okuda*
Kyoto Univ., Japan*Mitsubishi Elec., Japan

We have measured the electron emission characteristics of the carbon
nanotubes irradiated by two different lasers. From the emission
characteristics, we estimated the structural modification of carbon
nanotubes due to laser irradiation by Seppen-Katamuki analysis. The
feasibility of the present method was verified by observation of the CNT
length with scanning electron microscope.

----- Break -----

10:50 - 11:50

ANA Hotel Clement Takamatsu Hiten 2

FED2/PH5: FEDs and Phosphors for FEDs
Chair：
Co-Chair：

M. Nakamoto, Shizuoka Univ., Japan
T. Hisamune, Kasei Optonics

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FridayDecember 9

FED2/PH5 - 1: Invited High-Brightness, High-Resolution, High10:50
Contrast and Wide-Gamut Features of SurfaceConduction Electron-Emitter Displays
Y. Ishizuka, T. Oyaizu, T. Oguchi, H. Hoshi, E. Yamaguchi
SED, Japan
Surface-conduction Electron-emitter Displays (SEDs) have many
advantages for application to TVs. Surface Conduction electron Emitters(SCEs) provide the benefits of high brightness and high resolution owing
to their focused and controlled electron beams. In addition, non-linear IV characteristics of the emitters enable to express deep black.
Furthermore, phosphor screens with color filters realize a CRT-gradecolor gamut. Combination of the emitter and the screen offers theexcellent performance for TV application.
FED2/PH5 - 2
11:20

Development of Large Size CNT-FED
T. Tonegawa, M. Taniguchi, S. Itoh, K. Nawamaki,
Y. Marushima, Y. Kubo, Y. Fujimura, T. Yamaura
Futaba, JapanThe carbon nanotube (CNT) FED panel for information board wasdeveloped. This large size display panel realizes a lightweight, wideviewing angle and low power consumption. A unit panel size is 96 x 96mm, thickness is about 2.2 mm, anode voltage is 120 V, and spot
brightness is more than 1,000 cd/m2. The panel’s emitter is formed byscreen-printing of multi walled CNT which were made by arc-discharged
method. FEDs will be used for not only the TV applications but also
large-size panels for public information.
FED2/PH5 - 3
11:35

Full Color Graphite Nanofiber FED with 0.15mm Pixel
Pitch
K. Hagiwara, T. Takei, T. Sakai, T. Muroi, M. Ushirozawa,T. Yamamoto
NHK, JapanTo achieve a fine pitch FED, a GNF-FED with focus electrode wasdeveloped. The new fabrication process was developed and the growth
conditions of GNF were optimized. The dependence of focus voltage onelectron beam divergence was examined and the beam focusing was
confirmed. Assembling with the RGB phosphor screen, full-color video
was successfully reproduced on the GNF-FED with 0.15-mm pixel pitch.

----- Lunch -----

13:05 - 15:00

ANA Hotel Clement Takamatsu Hiten 2

FED3: CNT Emitters for FEDs
Chair：
Co-Chair：

136

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FridayFED3 - 8L
13:05

December 9
Reflective Structure for Carbon Nano-Tube Backlight
Unit
T. H. Tsou, M. H. Lin, B. N. Lin, W. Y. Lin, Y. C. Jiang,
C. H. Fu, L. Y. Chiang, Y. Y. Chang, M. H. Hsiao, C. C. Lee
EROS/ITRI, Taiwan

ERSO/ITRI has developed the novel and low-cost structure for the LCDTV backlight by using CNT-FED technology. In this new structure on theanode plate, a metal layer was coated as a reflector and a conductor.
Therefore, all of the lights will emit from the cathode plate and thesurface temperature is lower as the room temperature. We had
demonstrated a reflective structure for CNT-BLU to increase the lightemitting efficiency which is about 1.7 times compared to theconventional structure.
FED3 - 1
13:15

Field Emission Properties of MgO CoatedMultiwalled Aligned CNTs
S. Chakrabarti, L. Pan, H. Tanaka, Y. Nakayama
Osaka Pref. Univ., Japan

Well-aligned carbon nanotubes in specific pattern were synthesized bycatalytic thermal chemical vapor deposition technique. The carbon
nanotubes were then coated with MgO layer of different thicknesses toimprove the field emission property. Stable emission with a low turn-on
voltage of about 116 V was observed from the aligned nanotubes coatedwith a MgO layer of thickness 10 nm. The current fluctuation for 8hr was
found to be as low as 20% for MgO (10 nm) coated nanotubes.
FED3 - 2Synthesis of CNTs on Unheated Substrate by ECR13:30
CVD
W.-T. Wu, K.-H. Chen, C.-M. Hsu
Southern Taiwan Univ. of Tech., Taiwan
Multi-walled carbon nanotubes (CNTs) were grown onto unheatedsilicon wafer covered with cobalt catalyst by electron cyclotron chemical
vapor deposition. The diameters of CNTs vary directly with the thicknessof catalyst films. The morphologies of nanotubes are mainly related withthe microwave power and the flow ratio of C3H8/N2. Graphitized CNT
structures were identified using Transmission Electron Microscope andRaman spectra with a clear peak at 1580 cm-1.
FED3 - 3
13:45

Fabrication of CNT Emitter Device by Using RfPECVD at Low Temperature
T. Migita, Y. Shiratori, T. Kishino, Y. Takeuchi
Int. Ctr. for Materials Res., Japan

Carbon nanotube (CNT)-cathode device with micron-sized gate holes tobe applied for field emission display (FED) was produced. This cathodedevice is fabricated by a combination of usual lithography process andradio frequency plasma enhanced chemical vapor deposition at low
temperature. CNT-FED is believed to be next generation of FEDs due toexcellent field emission characters of CNTs. Simple fabrication process
and the good field emission characteristics are reported for the prepareddevices.

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FridayFED3 - 4
14:00

December 9
Uniform Fabrication of CNT Film on Cathodes byElectrophoresis Deposition Method
C.-Y. Hsiao*, S.-H. Lee*,**, K. Cheng*,**, Y.-A. Li*,**,
J.-L. Tsai*,**, J.-S. Fang*,**, C.-C. Kuo*,**, T.-F. Chan**TECO Nanotech, Taiwan**TECO Elec. & Machinery, Taiwan

Electrophoresis deposition method is a well know technology, but it is
new to fabricate CNT film on the cathode. Also this method has
developed many years, there still has many key technology must be
solved, such us CNT well suspension in solution, electro field control,
polarization phenomena, etc. In this paper we proposed an easy method
to improve polarization. We call it as “batch method”. From final results,
this method can solve polarization problem successfully, and CNT film
uniformity on cathodes were also improved.
FED3 - 5
14:15

High Anode Voltage Characteristic of TMG Structure
for CNT-FED
J. W. Jeong, Y. H. Song, D. J. Kim, S. H. Lee, J. H. Lee,K. Y. Kang
ETRI, Korea

We proposed the mesh gate structure for carbon nanotube (CNT) fieldemitter with a high accelerating anode voltage, and here renamed it the
tapered macro gate (TMG) to clarify its function. The TMG has relatively
tall and tapered holes compared with CNT emitter. The tapered gate
hole was shown to protect the CNT emitters from the anode field
perfectly, enabling us to apply a high anode voltage over 10 kV alongwith an electron beam focusing effect.
FED3 - 6
14:30

Anodic Aluminum Oxide as a Template for CNT Field
Emitters and AAO-CNT Triode Structure
C.-C. Lin, F.-M. Pan, M. Liu*, K.-C. Chang, P.-L. Chen,
C.-T. Kuo, C.-N. Mo*
Nat. Chiao-Tung Univ., Taiwan*Chunghwa Picture Tubes, Taiwan

We have used anodic aluminum oxide (AAO) as the template to growcarbon nanotubes (CNTs) for the application of field-emission display
technology. In order to obtain optimal field emission properties, we have
tried to control the density and the length of the CNTs grown from AAO
pore channels by tuning the growth time and the CH4 concentration of
the precursor gas mixture. AAO pore channel arrays were grown in thetriode structure, which was fabricated on silicon wafers by conventional
integrated circuit processes.

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FridayDecember 9

FED3 - 7
14:45

Morphology Study on CNT Emitters throughOptimization of Paste Composition
D. J. Kim, Y. H. Song, J. W. Jung, S. H. Lee, J. H. Lee,K. Y. Kang
ETRI, Korea

In order to improve field emission performances, the optimizing processof carbon nanotube (CNT) paste was investigated in terms of surface
morphology. The CNT emitters were formed by a photolithography
process and then a surface treatment was applied to protrude and alignCNTs vertically. The surface morphology and field emission properties
were found to be strongly dependent on the paste composition. The
CNT emitters with the optimized paste composition showed great
improvements in field emission characteristics including the effective
emission density, uniformity and life time.

----- Break -----

15:15 - 17:00

ANA Hotel Clement Takamatsu Hiten 2

FED4: FE Materials and Novel Device
Chair：
Co-Chair：T. Asano, Kyusyu Inst. of Tech., Japan
M. Suzuki, Hitachi, Japan

FED4 - 1
15:15

Various Nanostuctured Carbon Films for FED
Applications
Z. Sun, Z. J. Zhang, Y. W. Chen, T. Chen, L. L. Wang,
P. S. Guo, Z. Y. Cao, S. Ni, Y. Sun*
East China Normal Univ., China*Nanocs Int., USA

Nanostructured carbon (nm-C), including carbon nanotubes/fibers,
nanodiamonds, nanocarbon composites, diamond-like films, for novel
field emission display (FED) applications is reviewed. The synthesis andproperties of various nm-C films, the related fabrication system, device
structure and package, is studied. By using chemical vapor deposited(CVD) nm-C as the cathode, the low cost nm-C-FED prototypes havebeen developed, and showing excellent field emission properties, suchas low emission field, high stability, high brightness and uniform
emission.
FED4 - 2
15:30

Fabrication of Poly-Si TFT Controlled FED
M. Nagao, C. Yasumuro, Y. Sakamura, H. Tanoue,
S. Kanemaru, J. ItohNat. Inst. of Advanced Ind. Sci. & Tech., Japan

We fabricated poly-Si TFT controlled FEA and demonstrated complete
control of emission current. The response time of the TFT-FEA is about
15 μs, which is sufficient for active controlled display. We also fabricatedactive matrix FED and sealed in vacuum envelop using uniquepackaging process; that is exhaust-tube-less vacuum sealing.

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FridayFED4 - 3
15:45

December 9
Field Emission Distributions from HfC Thin Films
Studied with STM
T. Sato*,**, M. Saida*, K. Horikawa*, K. Adachi*,
M. Nagao**, S. Kanemaru**, S. Yamamoto**, M. Sasaki**Univ. of Tsukuba, Japan**Nat. Inst. of Advanced Ind. Sci. & Tech., Japan

Nanometer-scale distributions of field emission (FE) from HfC films are
obtained by using an STM with sample-hold circuits, where the tipsurface distance is controlled by constant current STM operation, andemission current from the surface is measured under a sufficient bias
voltage for a brief time. From the obtained FE images, we find thatelectrons are dominantly emitted from grain boundaries of the HfC films,
indicating that FE can be determined by other properties than geometryor microscopic work function.
FED4 - 4
16:00

Field Emission Characteristics of Boron Carbon
Nitride Films Deposited at Various Growth
Temperatures
K. Okada*, C. Kimura*, K. Okamoto**, M. Wada**,T. Sugino**Osaka Univ., Japan**Maizuru Nat. College of Tech., Japan

Field emission characteristics of the boron carbon nitride (BCN) films
deposited on the iron substrate at various temperatures are investigated.
The growth rate of BCN films deposited on the iron substrate is higher
than that deposited on the Si substrate. The carbon composition ratio
and the surface roughness increases with decreasing growthtemperature. The turn-on electric field as low as 5.1 V/μm is achieved
for the BCN film deposited at 200℃ on the glass substrate.
FED4 - 5
16:15

Work Function Measurement of Modified Tungsten
Surface by Use of Photoemission Electron
Microscope
Y. Nakano, K. Minami, K. Yamane, H. Nakane, H. Adachi
Muroran Inst. of Tech., JapanWork function of ZrO/W (100) surface is successfully measured by theuse of Photoelectron emission microscope (PEEM) to be 2.85±0.05eV,
which is in the range of so far reported values of 2.7~2.9eV with the
Fowler-Nordheim plot. The work function calculated from the slope of
the Fowler-Nordheim plot is widely accepted for the index of the cathode
performance, but it includes some ambiguities because of difficulty inestimating field strength. Photo-emission directly gives work function asa physical quantity.

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FridayFED4 - 6
16:30

December 9
LEED and XPS Studies on Modified Molybdenum
Surface by Zirconium and Oxygen
S. Satoh, H. Nakane, H. Adachi
Muroran Inst. of Tech., Japan

It has been reported that ZrO/Mo (100) has a Fowler-Nordheim work
function of 2.1eV, which is much smaller value than 2.7-2.9eV for the
ZrO/W (100) Schottky emitter. A specific LEED pattern of c (2 x 4) isobserved, which is very similar to the already reported results for ZrO/W(100). In situ XPS analysis for Zr 3d peak indicates that the “ZrO
complex” is also formed. These observing evidences suggest that thework function reduces very similar mechanism to the case of ZrO/W(100) Schottky emitter.
FED4 - 7
16:45

4.5-in. Triode-Type Flat Lamp Fabrication by Using
Novel Metal Gate Structure
W.-S. Cho*,**, H.-J. Lee*,**, Y.-D. Lee*, Y.-H. Lee**,J.-K. Kim*, J.-H. Park**, B.-K. Ju**
*Korea Inst. of Sci. & Tech., Korea**Korea Univ., Korea

A triode type flat lamp (4.5 inch) with screen printed carbon nanotube
emitters and metal gate is fabricated and its field emission properties
have been investigated. The metal gate is designed to the reversedtrench structure and fabricated by a conventional etch process. This
structure could decrease the vibration of the metal mesh by electric field
and the charging by the between cathode and metal gate. As a result,the uniformity and stability of the flat lamp are improved.

Author Interviews
17:10 - 18:10

Sponsor:158th Committee on Vacuum Nanoelectronics, JSPS

BANQUET
Wednesday, December 7
19:00 – 21:00
at Hiten (3F)
ANA Hotel Clement Takamatsu
See page 9 for details
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Tuesday

December 6

Workshop on Organic LED Displays
Tuesday, December 6
13:20 - 14:50

Sunport Hall Takamatsu Small Hall 1

OLED1: High Efficiency
Chair：
Co-Chair：J. Kido, Yamagata Univ., Japan
A. Mikami, Kanazawa Inst. of Tech., Japan

OLED1 - 1:
13:20

InvitedRecent Progress in Phosphorescent OLED

S. R. Forrest
Princeton Univ., USA
No abstract was submitted.

OLED1 - 2
13:50

Charge Transport Layers Doped with Molecular
Donors and Acceptors: High Power Efficiency andLong Lifetimes for Display and Lighting Applications
A. Werner, J. Birnstock, M. Hofmann, S. Murano,
M. Vehse, A. Lux, M. Limmert, A. Gruessing,J. Blochwitz-Nimoth
Novaled GmbH, Germany

Doped charge transport layers reduce the operating voltages of organic
light-emitting devices (OLED) for various kinds of device environments
such as substrate or electrode material. Development of suitable dopant
compounds and optimized device design yield OLEDs with very highpower efficiency for bottom and top emission configuration and very long
lifetime. The recent progress in doping technology is discussed. Using
doping technology, superior performance and stability for OLED
applications, e.g. displays and lighting applications, are possible.
OLED1 - 3
14:10

High Efficiency Bottom-Emitting OLED with External
Weak Microcavities
Y. W. Song, J. S. Oh, S. H. Jo, O. K. Song, Y. M. Koo,
Y. C. Kim
Samsung SDI, Korea

High Efficiency bottom-emitting Organic Light Emitting Device (OLED)with external weak microcavities (EWM) was developed. The external
microcavities consisted of a cathode metal mirror and interfaces withrefractive index contrast which were realized by inserting single pair ofthe dielectric layers of high and low refractive index (R.I.) between ITO
and glass substrate. It was proved that the efficiency in red, green, blue
color could be enhanced by 158%, 53%, 30%, respectively without
severe deterioration in viewing angle characteristics. A 128x160 passive
matrix OLED with external microcavities was fabricated and showed
20% higher brightness.

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Tuesday

December 6

OLED1 - 4
14:30

High Efficiency White Organic Light Emission Device
Based on New Orange Phosphorescence Material
X. M. Yu, W. Y. Wong*, H. J. Peng, B. Z. Tang, M. Wong,
G. J. Zhou*, H. S. Kwok
Hong Kong Univ. of Sci. & Tech., Hong Kong
*Hong Kong Baptist Univ., Hong Kong

White light emitting device based on a new orange phosphorescentmaterial Ir(DPA-Flpy)3 ((DPA-Flpy)H = (9,9-diethyl-7-pyridinylfluoren-2-yl)
diphenylamine) has been fabricated. The white OLED consists of it anda blue phosphorescent material FIrPic (iridum-bis(4,6,-difluorophenylpyridinato-N,C2)-picolinate). The threshold voltage is 4.2V, and thebrightness reaches 3200 cd/m2 at 10V, 30.3 mA/cm2. The color of thelight corresponds to a CIE coordinate of (0.31, 0.41). The highest
efficiency of the device can reach 17.8 cd/A or 7 lm/W at 8V, 2mA/cm2.

----- Break -----

15:05 - 16:35

Sunport Hall Takamatsu Small Hall 1

OLED2: Process Technology
Chair：
Co-Chair：S. R. Forrest, Princeton Univ., USA
A. Mikami, Kanazawa Inst. of Tech., Japan

OLED2 - 1:
15:05

InvitedAdvances in P-OLED Technology

J. Halls
Cambridge Display Tech., UK
No abstract was submitted.

OLED2 - 2
15:35

Development of Polymer Light-Emitting Diode(PLED)
Displays Using a Printing Method
K. Takeshita, H. Kawakami, T. Shimizu, E. Kitazume,
K. Oota, T. Taguchi, I. Takashima
Toppan Printing, Japan

We have developed a printing method for producing polymer lightemitting diode (PLED) displays. This method is a kind of direct printing,
and we have achieved it by modifying a common printing method, so it
is a relatively simple and cost-effective method. By using this method,
we have been able to make a patterned PLED layer accurately. We havestarted trial production of full color PLED displays and have achieved 70
ppi resolution.

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Tuesday
OLED2 - 3
15:55

December 6
Fabrication of Flexible Phosphorescent OLED
Display by Ink-Jet Printing
M. Suzuki, T. Tsuzuki, T. Kurita, T. Koyama*, T. Yamaguchi*,T. Furukawa**, S. Tokito
NHK, Japan*Showa Denko, Japan**Kyodo Printing, Japan

We have fabricated flexible OLED display by ink-jet printing. Highly
efficient phosphorescent materials were used as the ink solutions.
Molecular weights of the host polymer and solvents were optimized forthe ink formulation. ITO anode and polyimide bank structures were
fabricated on the plastic film by using a transfer method. The PEDT/PSS
and the emitting layer were exactly printed in the pixels, and sample
video image could be clearly observed.
OLED2 - 4
16:15

Analysis, Detection and Repair of Pixel Shorts in
PM-OLEDs
M. Kimura, Y. Kubo
Ryukoku Univ., JapanFirst, pixel shorts in PM-OLEDs are analyzed, and it is found that someactual shorts concoct many imaginary shorts. Next, a detection methodof the pixel shorts is invented, where light emission is observed in orderto detect the exact locations of the actual shorts. Finally, repair ideas forthe pixel shorts are proposed, which is expected to effectively separate
the pixel shorts and repair PM-OLEDs.

----- Break -----

16:50 - 18:10

Sunport Hall Takamatsu Small Hall 1

OLED3: Device Structure
Chair：
Co-Chair：J. Halls, CDT, UK
Y. Sato, JST, Japan

OLED3 - 1
16:50

Lifetime Optimization of Multi-Primary OLED
Displays
O. Belik, N. Cordes, F. Budzelaar, J. Hoppenbrouwers,
A. Giraldo, N. van der Vaart
Philips Res. Labs., The Netherlands

Polymer and Small Molecule OLED self-emissive displays have highbrightness, almost perfect viewing angle, and fast response time. An
OLED display with an extra fourth primary can reproduce a wider colour
gamut than a conventional three primary RGB display. Apart from that itallows to increase the lifetime of the OLED display. This paper shows
how a multi-primary display with a wider gamut can use the redundancy
to increase its lifetime.

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Tuesday
OLED3 - 2
17:10

December 6High Efficiency Green-Light-Emitting
Phosphorescent Organic Devices Based on a SideCoupling Color-Conversion Technique
A. Mikami, Y. Iida, K. Seishu, Y. Nishita
Kanazawa Inst. of Tech., Japan

A high efficiency phosphorescent yellowish-green-OLED has beendeveloped based on a Side-Coupling-Color-Conversion-Method (SC3M),
in which the green-light emission from an organic layer is laterallytransferred to an adjacent color-conversion layer. The device with SC3M
structure showed an external quantum efficiency (EQE) of 22.3% byusing a phosphorescent excitation light with an EQE of 15.1%, which isexceed to the theoretical limit for an out-coupling efficiency.
OLED3 - 3
17:30

Improved Light Out-Coupling Efficiency of TopEmitting Organic EL Devices with Ultra-Thin
Transparent ElectrodeT. Miyashita*, S. Naka*,**, H. Okada*,**, H. Onnagawa*,***Toyama Univ., Japan**JST, Japan

We have investigated light out-coupling efficiency of top-emitting organic
electroluminescent devices varied with thickness of transparent
electrode and anode electrodes. Out-coupling efficiency changed
periodically with indium-zinc-oxide (IZO) thickness and maximum
luminance was obtained for IZO thickness of 25 nm. For the device withultra-thin Au electrode of 10 nm and MoO3 buffer layer, luminance andcurrent efficiency are also improved as 8,000 cd/m2 and 2.2 cd/A,
respectively.
OLED3 - 4
17:50

A Novel Carbon Film on ITO to Enhance the
Performance Organic Light Emitting Diodes
C. K. Tzen, W. J. Shen, Y. L. Kao, S. J. Tang
Chunghwa Picture Tubes, Taiwan

Carbon films (CCn) as a HIL layer on ITO surface have been prepared indifferent deposition rates of CFx in the PECVD, followed by UV andplasma treatment. Higher ratio of CFx was turned into CCn after UV
treatment, compared to gaseous Ar and N2 plasma treatment. Ultra-thin
CFx remained at outer surface of CCn were shown in the XPS spectra.
Higher brightness of OLED with CCn as a HIL on ITO has been
observed.

Author Interviews
18:20 - 19:20

IMID / IDMC2006
Aug. 22 – 25, 2006
Daegu, Korea
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Wednesday

December 7

Wednesday, December 7
10:40 - 12:05

Sunport Hall Takamatsu Main Hall

OLED4/AMD5: Active Matrix OLED
Chair：
Co-Chair：B. J. Feenstra, Philips Res. Labs., The Netherlands
R. Hattori, Kyushu Univ., Japan

OLED4/AMD5 - 1: Invited Development of Full Color Double Sided
10:40
Active Matrix OLED
C.-W. Ko, S.-H. Hu, S.-H. Li, T.-H. Hsiao, K.-S. Lee,
C.-J. Chen, J.-H. Chen, J.-J. Lih
AU Optronics, Taiwan
A 1.5-inch full color double sided AMOLED has been developed. The
typical sub-pixel area is divided into two regions, which are designed for
top-emission and bottom-emission structures. With the novel array
design, independent images on both sides of the panel can becontrolled by only one IC driver. Superior performance of the double
sided AMOLED such as high color saturation and good power efficiency
were achieved. Very thin form factor and light weight with capability ofshowing two independent images on both sides make the double sided
AMOLED an excellent candidate for cell phone application.
OLED4/AMD5 - 2
11:05

7-in. WVGA AM-OLED Display with Color Filter on
Array (COA) and Pixel Compensation Technology
D.-Z. Peng, C.-H. Tseng, S.-C. Chang, P.-H. Yeh,
H.-L. Hsu, Y.-M. Tsai
Toppoly OptoElect. Taiwan, Taiwan

We have developed a 7-inch WVGA full-color AM-OLED display withtechnology of color filter on array (COA) and pixel compensation circuit.
To prevent precision mask misalignment issues, high efficiency white
OLED with COA was applied for higher resolution. In addition, a pixel
circuit which compensates both the TFT variations as well as EL power
voltage drop was proposed to improve the uniformity on the panel. With
these technologies, a large-size and high-resolution OLED display could
be achieved.
OLED4/AMD5 - 3
11:25

Novel Voltage-Sensing and Voltage-Programming
Method for Large-Size and High-Resolution AMOLED Panels
H.-J. In, P.-S. Kwag, J.-S. Kang, O.-K. Kwon, H.-K. Chung*Hanyang Univ, Korea*Samsung SDI, Korea

A novel voltage-sensing and voltage-programming method is proposed
for large-size and high-resolution AMOLED panels. The proposed
method successfully compensates the threshold voltage and mobility
variations of poly-Si TFTs throughout a large-size panel and overcomesthe problem of charging a data line. The HSPICE simulation results
show that the maximum emission current error for 30-inch full HDTV
applications is less than 1.86%, when the mobility variation and thethreshold voltage variation are +12.5% and +0.3V, respectively.

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Wednesday
OLED4/AMD5 - 4
11:45

December 7
New Current Compensation Theory in AM-OLED
Pixel Circuit by Employing Voltage-Scaled
Programming Method
W.-J. Nam, J.-H. Lee, S.-M. Han, H.-J. Lee, M.-K. Han
Seoul Nat. Univ., Korea

For the first time, we propose a new voltage-scaled programming pixel
circuit of AMOLED displays. Data voltages are scaled-down by thecapacitive-coupling of off-transition of the scan signal. The proposed
scheme of data voltage modulation contributes to scale down the VTH
variation of the poly-Si TFT. The input range of data voltages is scaled
up and the data addressing errors due to the clock feed-through of thescan signal are also reduced. Finally, IOLED is compensated and theuniform current is successfully controlled.

Author Interviews
17:30 - 18:30

15:00 - 17:00

Exhibition Hall

Poster OLEDp/AMDp: Active Matrix OLED
OLEDp/AMDp - 1

Novel Sub-Intra Gate Poly-Si TFT Structure for AMOLED Pixel Drivers
C. J. Shih, C. H. Fang, D. H. Deng, P. C. Liu, C. P. Kuan,
C. C. Lu
Chunghwa Picture Tubes, Taiwan

The novel poly-Si thin film transistors based on sub-gate, intra-gate, andasymmetric dual-gate structures are developed to satisfy the strict
requirements of AMOLED pixel drivers. Our experimental results showthat the proposed design can optimize the performance of dual gate
structures by suppressing kink current and light-induced leakage
current, while the aperture ratio and field effect mobility are also
improved remarkably.
OLEDp/AMDp - 2

7-in. WQVGA p-Si LTPS AM-OLED with Novel Driving
Architecture
I.-C. Shih, M.-T. Hsu
Chunghwa Picture Tubes, Taiwan

This paper presents a novel driving architecture for AMOLED that
adopts the commercialized TFT-LCD driver IC. By utilizing fully p-Si
LTPS process, this architecture has been successfully implementationon the 7-inch AMOLED display.

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Wednesday

December 7

OLEDp/AMDp - 3

New Pixel Circuits for Driving Organic Light Emitting
Diodes with Low Temperature Polycrystalline Si Thin
Film Transistors
Y. H. Tai, B. T. Chen, Y. J. Kuo, Y. J. Wei, C. C. Tsai,K. Y. Chiang, H. C. Cheng
Nat. Chiao Tung Univ., Taiwan

Two new pixel circuits for active matrix organic light emitting diode (AMOLED), based on the low-temperature polycrystalline Si thin-film
transistors (LTPS-TFTs) are proposed and the Vth compensation ability
is verified by SPICE simulation and measured results. The voltageprogramming pixel circuits are formed by five TFTs, one additional
control signal, and one storage capacitor. The simulation and measured
results show that the pixel circuit has high immunity to the variation ofpoly-Si TFT characteristics.
OLEDp/AMDp - 4

Non-Contact Method for Analysis of Pixel Circuits in
Active Matrix OLED Using External Probes with
Electrical Pulses and Photo-Multiplier Tube Detector
P. L. Huang, S. J. Tang
Chunghwa Picture Tubes, Taiwan

We presented an effective non contact way to probe TFTs and capacitor
on pixels, which was used to control on/off of switches and data storage
to light on AMOLED devices. The detecting system was a combinationof external electrical pulses on panel leads and a photomultiplier tube
(PMT) detector. The OLED emitting signal had been the clue tounderstand of the behaviors of pixel circuits by modifying the electricalsignal, and performance of OLED had been successfully improved.
OLEDp/AMDp - 5

New Pixel Driving Scheme Based a-Si:H TFTs by
Eliminating Switching TFTs in OLED Current Path for
Low Power Consumption
H.-S. Shin, J.-H. Lee, K.-S. Shin, M.-K. Han
Seoul Nat. Univ., Korea

We propose a new pixel design for active matrix organic light emitting
diode (AM-OLED) displays using hydrogenated amorphous silicon thinfilm transistors (a-Si:H TFTs). The proposed circuit is employed by a
new scheme of threshold voltage compensation. As VDD supply lines are
utilized clock signal, the threshold voltage of the driving TFTs ismemorized during the VDD clock signal off. The proposed circuit needs
only one driving TFT located in the OLED current path without any
additional switching TFT for VTH compensation, resulting in lower power
consumption than the conventional pixel circuits.

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Wednesday

December 7

OLEDp/AMDp - 6

Adaptive Current Scaling Pixel Circuit for a-Si:H AMOLED Displays
J. Z. Huang, J. A. Cheng, Y. C. Lin, W. Cheng,
H.-P. D. ShiehNat. Chiao Tung Univ., Taiwan

An adaptive current scaling pixel circuit for a-Si: H TFT process has
been demonstrated. The adaptive current scaling is achieved byinserting a small cascaded storage capacitor to the traditional pixel
circuit without affecting the aperture ratio. The proposed pixel circuit iscapable of shorting the programming time without sacrificing the power
consumption. Hence, the proposed pixel circuit is suitable for the large
size and high resolution AMOLED application.
OLEDp/AMDp - 7L High Contrast Top Emission Active Matrix RGB
OLED
R. Wood, R. Cheuk, WY. Kim
Luxell Technologies, CanadaThis work centers on the design of a high contrast AM top emission
OLED. The device is built on an AM backplane, with discreet RGB color
pixels, and a semi-transparent cathode. The structure utilizes the cavity
effects for enhanced emission while simultaneously incorporating a
tuned cathode for destructive optical interference.
OLEDp/AMDp - 8L 3-TFT Pixel Circuit Employing a Fraction TimeAnnealing To Improve a Current Stability of a-Si:H
TFT AMOLED
J. H. Lee, W. J. Nam, H. S. Shin, M. K. Han
Seoul Nat. Univ., Korea
We have proposed and fabricated 3-TFT pixel circuit employing afraction time annealing to improve a current stability for a-Si:H TFT
based AMOLED backplane. The measurement results, after an electricalbias and temperature (60℃) stress of 12 hours, show that OLED current
is decreased by 23% in conventional 2-TFT pixel, while decreased by
6% in the proposed 3-TFT pixel because a negative bias can reduce
VTH degradation of a-Si:H TFT itself.
OLEDp/AMDp - 9L New Voltage Programmed AMOLED Pixel Circuit
Using Reference Current
M. H. Jung, I. H. Choi, O. H. Kim, T. Y. Kim*, Y. W. Shin*,
H. J. Chung*
POSTECH, Korea*Kumoh Nat. Institue of Tech., Korea
A new pixel structure composed of six TFTs and one capacitor adopting
low temperature polysilicon (LTPS) is proposed. It can compensate boththe TFT threshold voltage variation and the supply voltage drop on
operation. Simulation of the proposed circuit is carried out with SMART
SPICE of RPI poly-Si TFT model.

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Wednesday

December 7

15:00 - 17:00

Exhibition Hall

Poster OLEDp: OLED poster
OLEDp - 1

Improvement of Electron Injection and Transport
Ability of C60 Electron Transport Layer
T. J. Park, Y. K. Lee, J. Y. Kim, S. K. Kwon, M. H. Kang,
D. H. Song, J. H. Kwon, J. Jang
Kyung Hee Univ., Korea

We have developed a new electron transport layer (ETL) of a n-typed
doped C60 composite for small molecule organic light-emitting diodes(OLEDs). The device using a n-type doped C60 material as an ETL
showed much higher electron injection ability compared with un-doped
one. The current density of n-type doped C60 device exhib-ited
30mA/cm2 at 3.4 V, while un-doped C60 device showed 2.5mA/cm2 at
the same voltage. This result indicates that n-type doped C60 facilitateselectron injection and transport from Al cathode without any electron
injection barrier
OLEDp - 2

Study of High Efficient Top-Emitting Multi-Photon
OLED
N. Nagai, Y-C. Lou, N. Miura, N. Tsutsui
Int. Test & Eng. Service, JapanThe top-emitting multiphoton OLED of two unit luminescence layers has
been studied. IZO has been used for CGL (Charge Generation Layer)and MoO3 also has been applied for the buffer on organic layer. The
luminescence of this top-emitting multiphoton device has shown theefficiency at twice of the single structure’s value.
OLEDp - 3

Nickel Embedded Indium Tin Oxide Anode for
Flexible Organic Light-Emitting Devices
C.-M. Hsu, Y.-S. Chen, C.-L. Tsai, W.-T. Wu
Southern Taiwan Univ. of Tech., Taiwan

Characteristics of an organic light-emitting diode (OLED) with a structureof Al/tris(8-hydroxyquino-line) aluminum (Alq3)/N, N’-bis- (1-naphthyl)-N,
N’-diphenyl-1,1’biphenyl-4, 4’-diamine (NPB)/indium tin oxide (ITO)/PET
film have been improved by nickel embedded ITO anode. A turn-on
voltage of 2.3 V can be reduced with the Ni-embedded OLED. The
surface roughness of ITO and Ni is also lowered due to the use of achemical-mechanical polishing process. The Ni-embedded ITO approachis hence capable of providing better OLED opto-electrical characteristics
and improved lifetime at the same time.

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Wednesday
OLEDp - 4

December 7
Enhanced Lifetime of Organic Light-Emitting
Devices Using a Nickel-Doped Indium Tin Oxide
Anode
C.-M. Hsu, W.-C. Hsu, C.-S. Kuo, W.-T. Wu
Southern Taiwan Univ. of Tech., Taiwan

The lifetime of an organic light-emitting diode(OLED)has been improvedby the introduction of Ni atoms in the surface of ITO anodes. A cosputter of Ni and ITO generates a high ITO surface work function andhence enhances the hole injection efficiency. It is demonstrated that the
lifetime of the OLED device with Ni-doing can be 1.7 times longer thanthat without Ni-doping. The results suggest that the existence of Ni
atoms in ITO surface can improve OLED characteristics without any
drawback in lifetime.
OLEDp - 5

Using Tunneling Junction to Enhance Hole-Injectionin Organic Light-Emitting Diodes
C.-C. Chang, S.-W. Hwang, M.-T. Hsieh, J.-W. Ma,
C.-H. Chen, J.-F. Chen
Nat. Chiao Tung Univ., Taiwan

We demonstrate enhanced hole-injection and lower driving voltage invacuum-deposited organic light-emitting diodes (OLEDs) with a novel
tunneling junction composed of the Mg: Alq3/WO3 layer.The device, ITO/
Mg: Alq3/WO3/NPB/Alq3/ LiF/Al, achieved one of the lowest driving
voltages of 5.8 V at 20mA/cm2 for conventional small molecule OLEDs.
We propose the laminated Mg: Alq3/WO3/NPB functions as a Fowler
Nordheim tunneling junction, which can improve hole-injection. It was
found to also prolong device lifetime under dc driving, that iscomparable to the best reported for the Alq3 emitter.
OLEDp - 6

Enhancing the Organic Electroluminescent Property
by Using Cerium Fluoride as an Electron Injection
Layer
H.-L. Hsu, H.-W. Chen, E.-J. Chen, P.-H. Yeh, Y.-M. Tsai
Toppoly OptoElect., Taiwan

In this study, the properties of organic electroluminescent (EL) devices
using cerium fluorides as an electron injection layer were investigated.
The results show that the device containing the cerium fluorides layer iswith a higher brightness and electroluminescent efficiency than thedevice without this layer. The maximum electroluminescent efficiency ofthe cerium fluorides with 0.1nm/Al cathode device was 10.28 cd/A,
which is higher than the 9.67 cd/A of the LiF 1 nm/Al cathode device.

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Wednesday
OLEDp - 7

December 7
A Full Color Pixel with Vertical Stack of RGB
Transparent OLEDs
T. Uchida, M. Ichihara, D. Ito, T. Tamura, M. Ohtsuka,
T. Otomo*
Tokyo Polytechnic Univ., Japan*MATSUBO, Japan

Transparent organic electro-luminescence device (TOLED) has a
specific feature that it is transparent when light is not emitted. Bychoosing a light emissive material for each color, we can fabricate sucha transparent device that emits red, green or blue light respectively.
Furthermore, it enables us to fabricate a full color display by stacking
these R,G,B, TOLEDs. In this display, RGB lights are emitted from one
pixel and a full color display is achieved by controlling each emission oflight individually and simultaneously.
OLEDp - 8

Modification of Polycrystalline Silicon as Efficient
Anode for Active Matrix Organic Light-Emitting
DiodesX. L. Zhu, J. X. Sun, H. J. Peng, Z. G. Meng, M. Wong,
H.-S. Kwok
The Hong Kong Univ. of Sci. & Tech., China

The effects of different modification methods for polycrystalline silicon(p-Si) on the performance of p-Si anode OLEDs have been studied. UVozone treatment of p-Si improved the device performance with suitable
UV time, while O2 plasma treatment led to deterioration. By depositing
ultra-thin high work function metal oxides, such as V2O5 and MoO3, on
p-Si anode, the performance of OLEDs was greatly improved comparedwith those using bare p-Si as anode and competitive with that of theconventional devices with ITO anode.
OLEDp - 9

White Light Emitting Devices from PolyfluoreneBased Blue and MeH-PPV Polymer Blending System
S. K. Kwon, Y. K. Lee, M. H. Kang, J. Y. Kim, T. J. Park,D. H. Song, J. K. Jin*, D. C. Shin*, W. J. Choi*, H. You*,J. H. Kwon, J. Jang
Kyung Hee Univ., Korea*SK, Korea

We have fabricated white polymeric light-emitting devices (WPLEDs)
from polyfluorene-based (PFO) blue and MEH-PPV polymer blending
systems. A device structure of ITO / PEDOT:PSS / polymer / LiF / Al
was employed. A current efficiency of 4.3 cd/A (4,230 cd/m2, QE=1.9%)
and a brightness value of 21,430 cd/m2 at 9.2 V with (0.35, 0.37) CIE
coordinates at 5V and (0.29, 0.30) at 9V were obtained.

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Wednesday

December 7

OLEDp - 10

The Effect of Anode Carrier Concentration on OLEDs
Performance
J. Hu, F. R. Zhu, L.-W. Tan, K. S. Ong, X. T. Hao*
Inst. of Materials Res. & Eng., Singapore*Chiba Univ., Japan

A study was carried out to understand the effect of carrier concentrationin anode on the electroluminescent performance of the OLEDs. The
surface electronic structure of ITO was found to be relevant to thecarrier concentration in ITO film. The anode contact property at ITO/
organic interface can be optimized by controlling ITO bulk carrier
concentrations and its surface properties through surface modification.
The electroluminescent characteristics of devices reveal that carrier
concentration in ITO plays a role in improving device performance.
OLEDp - 11

See-Through PLED Display
L.-W. Tan, C. C. Choy, K. S. Ong, X.-T. Hao*, E. C.-W.Ou,
F. R. Zhu
Inst. of Materials Res. & Eng., Singapore*Chiba Univ,. Japan

A high performance dual-sided top-emitting polymer OLED exhibited a
total luminous efficiency of ~5.0 cd/A at 4.0 V, which is comparable tothat for a control device having bottom emission structure. A laser
ablation technology was developed to define the pixels. The cathodeseparation was achieved without using the conventional reverse
trapezoid type. A prototype of see-through polymer light-emitting passive
matrix display has a matrix of 100×32 with a display area of 32.25 by
11.15 mm.
OLEDp - 12

Failure Mechanism of Organic Light-Emitting Diodes
on Flexible Substrate under Static and Dynamic
Mechanical Stress
J.-S. Oh, M. A. Karim, H.-Y. Shin, Y.-R Cho
Pusan Nat. Univ., Korea

The mechanism of failure of patterned ITO electrodes on PET wasinvestigated under static and cyclic bending in the mechanical stressmode. When mechanical stresses are increased, two types of microcracks are observed depending on the stress modes. The direction of
the micro-crack in ITO electrodes is perpendicular to the load for thestatic mode. The electrical resistance of an ITO electrode is related tothe density of the micro-cracks and failure mechanism of ITO electrode.

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Wednesday
OLEDp - 13

December 7
Enhancement of Luminance Characteristics in Top
Emitting OLEDs with Cr/Al/Cr Anodes
S. M. Chung, C. S. Hwang, J. I. Lee, S. H. Park, Y. S. Yang,
L. M. Do, H. Y. Chu
Elect. & TeleCommun. Res. Inst., Korea

We report on the effects of anode deposition methods on the TEOLED
characteristics. Top-emitting organic light-emitting diode was fabricatedon chromium and aluminum multilayer of Cr/Al/Cr anode using Si wafer
as a substrate. Chromium layers have been deposited by two different
deposition methods of sputtering and e-beam depositions. The TEOLED
containing the chromium layer deposited by sputtering method showed
higher luminance and efficiency than that containing the chromium layer
deposited by e-beam deposition.
OLEDp - 14

An Investigation of the Emission Mechanism for
White Organic Light-Emitting Diodes ComprisingBlue Fluorescence and Phosphorescent Iridium
Complexes
J.-F. Li, S.-F. Chen*, S.-S. Su**, M. Yokoyama**,
K.-S. Hwang
Nat. Chung-Cheng Univ., Taiwan*Nat. Chiao-Tung Univ., Taiwan**I-Shou Univ., Taiwan

We report on a highly efficient white organic light-emitting diode(WOLED), and establish the possible emission mechanisms of WOLED
configured with blue fluorescence and phosphorescent iridium
complexes. Evidence showed that by utilizing the suitable thickness ofgreen and red emitting layer (400）， a higher luminanceperformance of WOLED could be obtained. It is suggested that the
optimal thickness of green and red emitting layer could effectively assist
the carrier injection and emitting in green and red emitting layer.

!

OLEDp - 15

Comparison between Laser and Wet Etching ofIndium Tin Oxide on Optoelectrical Properties ofOrganic Light-Emitting Diodes
J.-F. Li, S.-H. Su*, G.-T. Chen*, M. Yokoyama*,
K.-S. Hwang
Nat. Chung-Cheng Univ., Taiwan*I-Shou Univ., Taiwan

We investigated the influence on optoelectrical properties of organic lightemitting diode (OLED) by both etching methods of indium tin oxide (ITO)
substrates. Experimental results showed that the OLED with a laseretched ITO substrate exhibits a lower drive voltage than that with a wetetched substrate. However, a laser-etched device results in a lower
luminance performance. By scanning electron microscopy (SEM)
measurement, we found the different surface morphology of ITO patternedge was get after both of the different ITO etched methods.

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Wednesday
OLEDp - 16

December 7
Solution-Processible Organic Light-Emitting Device
Based on Quinolato-Complex Supramolecules
J.-A. Cheng, C. H. Chen, H.-P. D. ShiehNat. Chiao Tung Univ., Taiwan

A new type of supramolecular light-emitting materials Al (SCarq)3 wassynthesized by 5-N- ( 3-car-bazylpropyl ) -p-methylaniline-sulfonyl-8hydroxyquinoline . Via molecular engineering, its solid photoluminescence shows blue-green at 488 nm and two HOMO sites were
-5.44 and -5.93 eV. For OLEDs fabrication using spin-coating
techniques, the turn-on voltage and the maximum luminescent were 9.6
V and 35.0 cd/m2, respectively. Due to the electroplex formation, thechromaticity of EL was shifted to green-yellow with 1931 CIEx, y (0.40,0.47).
OLEDp - 17

Formation of Dark Spots Induced by Crystallizationof Organic Layers in Organic Light-Emitting Diodes
S. Y. Kim, K.-H. Hong, C. W. Bark, Y.-M. Koo, K. Y. Kim*,
Y.-H. Tak*, J.-L. Lee
Pohang Univ. of Sci. & Tech., Korea*LG Elect., Korea

We report electroluminescence degradation in organic light emitting
diode as a function of applying bias. A number of dark spots were
produced as applying bias increased. Microscope image showed thatdark spots are related to many protrusions and hollows formed on Al
electrode. X-ray diffraction and x-ray micro-diffraction indicate that Jouleheat from high electric field induced the crystallization of organic
materials, forming dark spots via peeling-off the Al cathode from Alq3
layers.
OLEDp - 18

Pure Aluminum as the Anode in Top Emission OLED
Fabrication Process
X. M. Yu, H. J. Peng, X. L. Zhu, J. X. Sun, M. Wong,
H. S. Kwok
Hong Kong Univ. of Sci. & Tech., Hong Kong

Good performance top emitting organic light emitting diode (TOLED)with pure aluminum metal layer as the bottom anode has been
fabricated. The brightness of the device could reach 4500cd/m2 atapplied voltage 12V. The highest current efficiency is about 6.8cd/A at a
driving current density 50mA/cm2, which is much higher than that of thestandard device and nearly twice as high as that of the TOLED withadditional high work function silver deposited on aluminum as theanode.

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Wednesday
OLEDp - 19

December 7
Control of ITO Characteristics by Heat Treatment in
Organic Light Emitting Diodes
L. Fenenko*,**, C. Adachi**Chitose Inst. of Sci. & Tech., Japan**NASU, Ukraine

ITO modification using heat treatment for low driving voltage of OLEDs
is proposed. Annealing of a regular ITO layer at 250℃ in a GB led toboth structural and surface changes. As a result, ITO work function was
decreased, reducing the injection barrier to holes and facilitating thetunneling of carriers. The decrease of driving voltage with an increase ofannealing time was obtained.
OLEDp - 20

Design and Fabrication of Integrated Shadow Mask
for Passive Matrix OLED Displays
Z. H. Huang, W. M. Su, G. J. Qi, X. T. Zeng
Singapore Inst. of Manufacturing Tech., Singapore

This paper reports a structural design and fabrication process of anadvanced integrated shadow mask, which is used for fabrication ofpassive matrix OLED display panel. The shadow mask is featured witheasy fabrication, low cost and ability for large or even full angle
deposition. The influence of process parameters on mask pillar profile
was discussed. A prototype of mono color passive matrix (132X64)
OLED display device was fabricated by using such an integrated
shadow mask.
OLEDp - 21

Organic Light Emitting Displays with a Single
Isolation Layer
K.-H. Choi, B.-H. Byun, S.-W. Youn, S. J. Yi, D.-H. Choi
Daewoo Elect., Korea

We developed an organic light emitting display with a new isolation
method. In the new isolation method, insulators and cathode separators
are formed simultaneously with a single layer of image reversal photoresist. The fabrication process is reduced to about 30% compared to theconventional isolation method and the width of the isolation layers is
minimized since the insulators and the separators are self-aligned in the
new isolation method.
OLEDp - 22

The Measurement of Degradation in Organic LightEmitting Displays for Aging Compensation
H. Yang, C. L. Chien, K. C. Liu, J. W. Chen
Nat. Taipei Univ. of Tech., Taiwan

The concept of measuring the voltage-drop increment across an organic
light-emitting device (OLED) as a pixel while degrading during operation
was investigated by using an attached detection circuit as a real-timemeasurement unit. Several detection circuits based on comparators withboth analog and digital design were studied by using SPICE simulation.
Our study reveals that some specific detection circuits can effectively
measure the voltage-drop increment across an OLED while degradation
occurs at initial turn-on status within the range of less than one volt. The
percentage error of our measured voltage-drop increment can becontrolled within 1.5%.

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Wednesday
OLEDp - 23

December 7
Impedance Spectroscopy of Polymer Light-Emitting
DiodesH. Azuma, T. Okachi, N. Watanabe, T. Kobayashi, H. Naito
Osaka Pref. Univ., Japan

Impedance spectroscopy (IS) measurements have been carried out onpoly(9,9-dioctylfluorene) (F8) polymer light emitting diodes (PLEDs) inorder to determine the equivalent circuits of F8 PLEDs. Below thethreshold voltage for electroluminescence (EL), F8 PLEDs can bemodeled by an equivalent circuit of one RC component. Above thethreshold for EL, F8 PLEDs can be modeled by a R - L series branchattached parallel to the RC component. The origin of these equivalentcircuits is discussed.
OLEDp - 24

Fiber OLED Array for Flexible Display
K. Yase, K. Suzuki, M. Hiroshima, A. Mimura, Y. M. Shuu*,
S. Toda*, H. Koaizawa*
AIST, Japan*Furukawa Elec., Japan

We have successfully fabricated organic light emitting diode (OLED) on
glass fiber as an one-dimensional substrate, whose diameter of 50―300
μm corresponds to the pixel size for flat panel display (FPD).
OLEDp - 25L The Power Consumption Reduction Algorithm of
OLED Display
S. R. Shin, H. H. Hwang, S. H. Kim*, J. S. Park*
Image Lab, Korea*LG Innotek, Korea
We have developed the power consumption reduction algorithm of the
OLED display that could lower the power of it to about 30 % level of theconventional OLED display driving. We applied this algorithm tomanufactured PM OLED models and confirmed its effect. Above allthings, this method makes it possible to drive the OLED display below a
constant power level, which can be decided by users freely. We thinkthat this method contributes to making it easier to commercialize the
OLED display such as a mobile product display and a large size TV.
OLEDp - 26L Efficient Blue to UV OLEDs Base on the Novel
Emitters
Y. M. Kim, Y. W. Park, J. S. Park*, Y. S. Man, S. K. Yun**,M. H. Lee***, J. K. Kim*, B. K. Ju
Korea Univ., Korea*Korea Inst. of Sci. & Tech., Korea**NANO LCD, Korea***VNF INNOVATION, Korea
Two-layer organic light-emitting diodes (OLEDs) in the range of 380 nm
to 440 nm are reported. An efficient and stable electroluminescence witha maximum at 400nm was observed at room temperature under aforward bias about 5V. With the novel small molecular organic materials
for blue to ultraviolet (UV) emission, the low operating voltage (5V) andhigh current efficiency (3 cd/A) have been obtained at 2mA/cm2

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Wednesday

December 7

OLEDp - 27L Analysis of the Degradation Mechanism of
Phosphorescence OLED II
R. Kamoto, K. Araki*, M. Ichikawa*, Y. Taniguchi*
Micro Analysis Lab., Japan*Shinshuu Univ., Japan
Phosphorescence OLED of Ag-Mg/Alq3/BCP/CBP·FIrpic/NPD/ITO, EL
intensity of which was reduced by half in nitrogen gas under continuous
electric driven, was analyzed by micro analysis method. Changes inmolecular structure of the all components are found to have occurred byelectrically driven, and compared with results of heat annealing
treatment.
OLEDp - 28L Suppression of Dark-Spots Formation Varied With
Cathode Interface in Organic Light Emitting Devices
Y. Motono, S. Naka, H. Okada, H. Onnagawa
Toyama Univ., Japan
Suppression of dark spots formation varied with organic layer/ cathodestructure has investigated. Basic structure for evaluation was ITO/ TPD+
Rubrene/ Alq3/(LiF or BCP/LiF or BCP)/ Cathode. Device structure
without LiF layer, number of dark spot dramatically decreased whilebright-spots appeared. By inserting BCP layer, number of dark-spots
also decreased. Dark-spots disappeared for the device with BCP/AlNd.
Trans-mission electron microscope observations at the dark-spot anddurability test fitted using Weibull distribution also were discussed.
OLEDp - 29L Efficient OLED Fabricated by All Wet Process Using
Alcohol-Soluble and Wide Energy Gap Organic
Semiconductor
Y. Goto, T. Hayashida*, M. Noto*
Kyushu Elec. Power Inc, Japan*Daiden, JapanWe demonstrated highly efficient OLED fabricated by all wet process
employed the electron transporting material, called DYETM-4. DYETM-4
have wide energy gap of 4.26eV. The all wet processed OLED using
electron transporting DYETM-4 exhibited efficient EL performance;
maximum current efficiency ηMAX was evaluated to be 41.7 cd A-1 (anexternal quantum efficiency = 11.6%) at an applied voltage of 9V at aluminance of 57.4cd m-2.

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Wednesday

December 7

OLEDp - 30L Mixed Layers in OLED Devices - Hole and electron
mobility in a model system α-NPD / TAZ.
H.-P. Loebl, C. Zimmermann*
Philips Res., Germany*Inst. of Electromagnetic Theory, Germany
Efficient small molecule OLEDs attract interest for lighting applications.
To improve lifetime and efficiency, balanced carrier concentration in therecombination region is required. This can be achieved realizing equal
mobility of electrons and holes in a mixed layer. We used a model
system consisting of a hole conductor (α-NPD) and an electron
conductor (TAZ) to study the change in carrier mobility due to mixing.
The hole mobility is reduced strongly due to mixing, while the electron
mobility in the mixture remains constant. The results are explained withhopping transport in diluted systems.
OLEDp - 31L Electroluminescent Characterization of PolymerBased Light- Emitting Diodes with Doping
Nanostructured Carbon
H. S. Koo, M. Chen*, S. K. Kwon, Y. K. Lee, T. J. Park,J. Y. Kim, D. H. Song, K. C. Park, J. H. Kwon, J. Jang
Kyung Hee Univ., Korea*Ming-Hsin Univ. of Sci. & Tech., Taiwan
A polymer-based light-emitting diodes with doping minor amountnanotsructured carbons have technically been fabricated by the solutionbased spin coating technique. Electroluminescent characterization of the
CNTs-doped polymeric light-emitting diodes have instrumentally beenmeasured and basically analyzed from the experimental results. The
performance of polymer light-emitting diodes in electroluminescencehave effectively been improved by doping nanostructured carbon at alimited extent of magnitude.

EVENING GET-TOGETHERWITH WINE
Monday, December 5
18:00 – 20:00
Main Hall Foyer (3F),
Sunport Hall Takamatsu(Sponsored by Merck Ltd., Japan)
See page 9 for details
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ThursdayDecember 8

Workshop on
3D/Hyper-Realistic Displays and Systems
Thursday, December 8
13:40 - 15:10

ANA Hotel Clement Takamatsu Hiten 3

3D1: Perception and System Design
Chair：
Co-Chair：M. Katayama, NHK, Japan
M. Tsuchida, NICT, Japan

3D1 - 1:
13:40

Invited Effects of Display Size on Visually Induced
Motion Sickness
H. Ujike, T. Yokoi, S. Saida*Nat. Inst. of Advanced Ind. Sci. & Tech., Japan*Nat. Defense Ac., Japan

To investigate effects of display size on vection and visually induced
motion sickness, we presented 20 minutes video picture, which had
been taken by hand-holding video-camera, on four different sizes ofliquid crystal displays. Number of 138 observers’ task was to answer the
Simulator Sickness Questionnaire, or SSQ, before and after watching
the video picture. The difference of total score of SSQ shows more
severer sickness for larger number of observers was observed for larger
display sizes. Moreover, we found that difference of gender, age andsusceptibility to motion sickness affects the results.
3D1 - 2
14:10

Added Value of a Multi-View Auto-Stereoscopic 3D
Display in Gaming Applications
R. J. E. Rajae-Joordens, E. H. A. Langendijk, P. Wilinski*,I. E. J. Heynderickx
Philips Res., The Netherlands*Philips 3D Solutions, The Netherlands

The longer-term use of multi-view 3D displays in gaming applications
was investigated with 20 experienced gamers. During two gaming
sessions, one in 2D and one in 3D, galvanic skin response and heart
rate were measured (both assumed to assess emotions and presence),
followed by questionnaires at the end of each session. The results showthat 3D displays provoke significantly higher positive emotions andstronger feelings of presence than 2D displays, indicating that 3D
displays have added value in gaming applications.

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Thursday3D1 - 3
14:30

December 8
Examination on Stereoscopic Representation withAccommodation
K. Ohta, T. Shibata, T. Kawai, M. Otsuki*, N. Miyake*,
Y. Yoshihara**, T. Iwasaki***Waseda Univ., Japan*Nikon, Japan**Arisawa Manufacturing, Japan***Univ. of Occupational & Environmental Health, Japan

We have developed a stereoscopic 3-D display system with dynamic
optical correction that reduces the optical discrepancy. The contents ofthis system allows various camera controls in virtual space to produce
different impressions. This is accomplished by means of a customized
VR authoring tool attached to the system. We examined camera control
patterns in VR space and effective expression techniques using thissystem. The results show that various camera control patterns
significantly affect the subject’s impression of the images.
3D1 - 4
14:50

Analysis of Reproduced 3D Space by Stereoscopic
Large LED Display
H. Noto*, H. Yamamoto*, Y. Hayasaki*, S. Muguruma**,
Y. Nagai**, Y. Shimizu**, N. Nishida**Univ. of Tokushima, Japan**Nichia, Japan

We have developed a stereoscopic display system of real-world imagesby use of camera devices. In the developed stereoscopic display using
full-color LED panel, reproduced positions are formulated based on
camera arrangements and eye positions. Furthermore, the limitations offusion of stereoscopic images shown on the stereoscopic large LED
display have been calculated for different camera arrangements and theresults suggest that there is an optimal arrangement of cameras tomaximize the reproduced three-dimensional space.

Author Interviews
17:30 - 18:30

SID 2006
Society for Information Display
Symposium, Seminar & Exhibition
June 4–9, 2006
San Francisco, CA, USA
http://www.sid.org

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ThursdayDecember 8

15:00 - 17:00

Citizen’s Gallery

Poster 3Dp: 3D Display (Late News)
3Dp - 1L

Autostereoscopic Display Using Dual Liquid Crystal
Display Panel
T. Nishida, K. Sakamoto
Shimane Univ., Japan

Many 3D visualization technologies have been invented, but none ever
had a broad success. This report describes the field lens display forviewing the 2-views stereoscopic images. The conventional systems
have the defect that it needs the complicated optical system for
combining a stereo pair image. To overcome this optical problem, wedeveloped the dual LCD panel using two liquid crystal layers. This
display panel enables observers to view full screen high resolution
images. This study shows that it is possible to simplify the opticalsystem.
3Dp - 2L

A Moire Method 43-inch 3-D Display System Using
Lenticular Screen
C. Yamada, K. Irikura, H. Isono
Nippon Inst. of Tech., JapanThe authors produced a rear projection type 43-inch pseudoscopic 3-D
display using lenticular screen as creating a big depth perception on
moir method 3-D display that allows viewers to see a 3-D image
without special glasses. With this display, viewers are able to see a
image surrounded by moir patterns that appear to be either floating or
sinking without special glasses. This ability to produce deep 3-D visual
effects is a useful means for presentations and storefront
advertisements.
3Dp - 3L

Dual Views Display: Polarizer Slits Enable Full
Screen High Resolution Viewing
M. Yoshigi, K. Sakamoto
Shimane Univ., Japan

Conventional parallax barrier display systems have demerits such thatthe barrier cuts resolution of a screen in half. This report describes thedevelopment of a desktop dual views display using polarizer slits forcollaborative tasks. The polarizer slits enable observers to view fullscreen high resolution images, and this proposal can solve theresolution problem of the conventional system.
3Dp - 4L

A Turn-Type 64 Colors 3-D Display Using LEDs
T. Yamaguchi, Y. Sakamoto, I. Fukuda
Kanazawa Inst. of Tech., Japan

We have developed a turn type a color 3-D (3 Dimensional) display
designed with a vertical array of LEDs (Light Emitting Diodes) toincrease the number of depth sampling display colors to 64. The
movement of the LED array allows two dimensional images to beperceived by the effect of afterglow. The movement of the 13 arrays
arranged depth direction enables 3-D images to be displayed in real
space. We have achieved displaying 64-colors 3-D images with highbrightness.
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FridayDecember 9

Friday, December 9
10:40 - 12:25

Kagawa International Conference Hall

3D2: Advanced Display Systems
Chair：
Co-Chair：S. Otsuka, NTT Data, JapanS. Yano, NHK, Japan

3D2 - 1:
10:40

Invited A 3D Video System for Archiving of JapaneseTraditional Performing Art
M. Katayama, K. Tomiyama, Y. Orihara, Y. Iwadate
NHK, JapanWe are studying how to archive Japanese intangible cultural heritage inthe form of dynamic 3D model. The dynamic 3D model is generated
from video images captured by multiple cameras surrounding a target
subject. By synthesizing the dynamic 3D model of the Noh actor with a
CG of Noh stage, we can see an entire Noh scene from any viewpoint.
We report on the outline of a 3D video system for archiving of Japanesetraditional performing art.
3D2 - 2
11:10

Optimization of Camera Parameters in Volume
Intersection
H. Iwase, K. Shoji, F. Toyama, S. Sakamoto
Utsunomiya Univ., Japan

This paper examines attempts to optimize camera parameters witherrors by reconstructing a 3D shape via the method of volumeintersection. Reprojecting the reconstructed 3D shape to image planes,
the camera parameters are determined by finding the reprojectedsilhouette images that result in minimal lost area when compared to theoriginal silhouette images.
3D2 - 3
11:30

Compact Six-Primary Color DLP Projection Display
System for High-Fidelity Color Reproduction
M. Tsuchida*, H. Fukuda*, J. Kishimoto*, H. Kanazawa*,
M. Yamaguchi*,**, H. Haneishi*,***, N. Ohyama*,***Nat. Inst. of Info. & Commun. Tech., Japan**Tokyo Inst. of Tech., Japan***Chiba Univ., JapanWe developed a compact six-primary-color DLP projection display
consisting of two single-chip DLP projectors. Two different types of filler
are inserted into each projector so that six primary colors are obtained.
The auto calibration processor hardware calibrates images from eachprojector to remove geometrical distortion in real-time from the six
primary-color images when they are overlapped on the screen. The
image size on the screen is 20 inches, and the resolution is SXGA+.

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FridayDecember 9

3D2 - 4
11:50

Small Cylindrical Display Using an Aspherical Mirror
for Anthropomorphic Aagents
T. Kawanishi*, M. Tsuchida**, S. Takagi***, A. Kimura,
J. YamatoNTT, Japan*Plala Networks, Japan**NTT Data, Japan***Okinawa Nat. College of Tech., Japan

We have developed a small cylindrical display for anthropomorphic
agents that communicate with multiple users in a 3D environment. A
previously reported cylindrical display was dark with poor contrast in thelower part of the screen because the pixel density is much lower than in
the upper part. We improved the uniformity of the pixel density by using
an aspherical mirror. Experimental results show that our new display has
better luminance and better contrast than the previously reported
display.
3D2 - 5L
12:10

Pixel Design for Optimized 2D/3D Displays
C. van Berkel, M. Inoue*, T. Inada*, H. Louwsma**,
S. T. de Zwart***, J. R. Hector
Philips Res. Labs., UK*Philips Mobile Display Syss., Japan**Philips Mobile Display Syss., The Netherlands***Philips Res. Labs., The Netherlands

A 2D/3D switchable 1.8” QVGA AMLCD has been made with optimisedcolour filter and pixel layout. In 2D mode the display provides full
resolution and brightness, while in 3D mode it provides full brightness,
4-view multiview 3D with high resolution per view, minimized inter-view
cross talk and large freedom of viewing position.

----- Lunch -----

13:50 - 15:00

Kagawa International Conference Hall

3D3: Holography
Chair：
Co-Chair：

164

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M. Tsuchida, NICT, Japan2005.11.02 18.22.10

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Friday3D3 - 1:
13:50

December 9
Invited Real-Time Electroholography by SpecialPurpose Computer HORN
T. Ito*,**, N. Masuda**, A. Shiraki**, T. Shimobaba****JST, Japan**Chiba Univ., Japan***Yamagata Univ., Japan

We have developed special-purpose computers, named HORN, for acomputer-generated hologram. The latest machine HORN-5 calculates ahologram with a 1,408 by 1,050 resolution at video rate for an object
consisting of 10,000 points. It is 1,000 times faster than a today’s
personal computer. We discuss the effectiveness of a special-purpose
computer system for a real-time electroholography which requires
enormous calculation cost. 50- to 80-word abstract is required.
3D3 - 2
14:20

A Colored Interactive Three-Dimensional Display
System by Use of Electroholographic Display Unit
T. Shimobaba, A. Shiraki*, N. Masuda*, T. Ito*,**Yamagata Univ., Japan*Chiba Univ., Japan**JST, Japan

We report a colored interactive three dimensional (3D) display system
by use of an electroholographic display unit consisting of a specialpurpose chip for holography and a high resolution liquid crystal display
panel. An observer can perform interactive operations, such as rotationand movement, to the reconstructed color 3D object by use of a
keyboard, while viewing the reconstructed color 3D object.
3D3 - 3
14:40

Parallax Barrier 3D Reflection Display Using
Holographic Screen
K. Sakamoto, M. Takaki, M. Nishida
Shimane Univ., JapanThe 3D reflection display system using an LCD projector has superior
characteristics, such as having a large screen with wide field of view.
However the conventional projection 3D display system has suchdisadvantage that the observer needs to wear special glasses forviewing stereoscopic images. This paper describes the 3D reflection
display system with a holographic screen. This 3D display can avoid the
problem of the conventional system. Moreover, the observer can view
glasses-free 3D images without the pseudoscopic problem.

----- Break -----

15:10 - 17:15

Kagawa International Conference Hall

3D4: 3D Display
Chair：
Co-Chair：I. Yuyama, Utsunomiya Univ., Japan
T. Mishina, NHK, Japan165

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Friday3D4 - 1:
15:10

December 9
Invited Development of Lenticular-Type
Autostereoscopic Liquid Crystal Display Based on
One-Dimensional Integral Imaging
K. Taira, Y. Hirayama
Toshiba, JapanWe developed an autostereoscopic display using a vertical lenticular
sheet and a liquid crystal display with modified color pixel arrangement.
This autostereoscopic display had more than ten horizontal parallaxes
generated by employing the integral imaging method that realize easyto-view, natural, and less-fatiguing stereoscopic images. We also
proposed a flatbed-type display that brought about a more effective
stereoscopic experience than that available in the case of theconventional upright-type display.
3D4 - 2
15:40

High-Appearance Images Generated by High-Density
Directional Display
Y. Takaki, T. Dairiki
Tokyo Univ. of A&T, JapanThe ray reflection and refraction should be precisely controlled in orderto reproduce the appearances of objects, such as specularity andtransparency of objects. The high-density directional display can
reproduce the appearances of objects because it can control a large
number of directional images projected in different horizontal directions
with directional rays. The prototype display which generates directionalrays in 72 different horizontal directions with the angle pitch of 0.38°
was constructed and the impression analysis experiments showed its
effectiveness.
3D4 - 3
16:00

Full Parallax Image Generation with a Single Viewing
Zone Forming Optics
J.-Y. Son, V. V. Saveljev, S.-Y. Chung*, K.-H. Cha*
Hanyang Univ., Korea*Samsung Elect., Korea

Three different arrangements of different view images in the multiview
imaging systems are examined and their constructing methods areinvestigated to build full parallax 3 dimensional imaging systems withuse of a viewing zone forming optics which is composed of one
dimensionally aligned elementary optics. By arranging the images twodimensionally in the pixel cell, depth sense for almost 180deg inclination
angle of viewer’s head to the shoulder is obtained
3D4 - 4
16:20

Lastest Developments in a Multi-User 3D Display
P. Surman*, I. Sexton*, K. Hopf**, W. K. Lee*, R. Bates*,
T. Koukoulas**De Montfort Univ., UK**Heinrich-Hertz-Inst., Germany

The principle of operation of the De Montfort University (DMU) multiuser 3D display is described. The DMU display enables several viewers
to move freely over a large area and to all see the same stereo image
pair without the use of special glasses. A brief description of the first
prototype, and the problems identified from this, will be given. Work on
an improved prototype that is currently being built is described.
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FridayDecember 9

3D4 - 5
16:40

Fractional Viewing Systems to Reduce Banding in
Lenticular Based 3D Displays
O. H. Willemsen, S. T. de Zwart, W. L. IJzerman
Philips Res. Labs., The Netherlands

In this paper we describe the design of a 5 view lenticular based 2D/3D
display for mobile applications A very noticeable such displays is theoccurrence of dark bands. We will show that, despite slanting thelenticular and defocusing the lens, banding becomes unacceptable
when the display is viewed from an angle. We introduce fractionalviewing systems to reduce the banding intensity by almost two orders ofmagnitude. The resulting 3D display can be viewed from any direction
without banding.
3D4 - 6L
17:00

Depth Reproducibility for Inclined View in DFD(Depth Fused 3-D) Display
M. Date*, H. Takada*, Y. Gotoh*,**, S. Suyama**NTT, Japan**Kyoto Univ., JapanThe depth reproduction characteristics of the DFD display were studied
when an observer views it at an oblique angle. The tendency can beroughly explained considering binocular disparity induced by all
combinations of side edges of front and rear images. If the spatial lowpass-filter effect in edge detection is considered, the experimental
results agree well with theoretical calculations.

Author Interviews
17:10 - 18:10

EXHIBITION
12:00 – 18:00 Tuesday, Dec. 6
9:00 – 18:00 Wednesday, Dec. 7
9:00 – 18:00 Thursday, Dec. 8
9:00 – 14:00 Friday, Dec. 9
Small Hall 2 (5F)
Sunport Hall TakamatsuFree admission with your registration name tag.
167

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Wednesday

December 7

Workshop on
Applied Vision and Human Factors
Wednesday, December 7
9:00 - 9:10

ANA Hotel Clement Takamatsu Hiten 3

Opening
Opening Remarks
9:00
H. Isono, Workshop Chair
9:10 - 10:50

ANA Hotel Clement Takamatsu Hiten 3

VHF1: Viewing Angle Dependent Image Quality
Chair：
Co-Chair：Y. Shimodaira, Shizuoka Univ., JapanT. Kurita, NHK, Japan

VHF1 - 1
9:10

Can We Predict LCD Aspect Using Local Viewing
Angle Measurements?
P. Boher, V. Gibour, T. Leroux
ELDIM, France

The paper study if the aspect of LCDs is driven by local emission
inhomogeneites or by geometrical consideration. To clear this point weuse viewing angle measurements at different positions on the surface ofa display and simulate the LCD aspect versus observer position.
Comparison to video colorimeter images of the same displays show thatboth local and global properties of the display must be taken into
account to predict correctly the aspect of the displays.
VHF1 - 2
9:30

Subjective Evaluation of Various Grayscale Viewing
Angle Characteristics Using Simulated Images
Y. Hisatake, M. Obi, H. Ito, C. Tago, Y. Kawata,
A. Murayama
Toshiba Matsushita Display Tech., Japan

Patience Limit (PL) and Just Noticeable Difference (JND) of various
grayscale viewing angle characteris-tics were evaluated subjectively
using simulated images. In the evaluation, ten test subjects evaluated 4
types of picture images and those of 8 different images; 2 kinds ofreverse images, 3 kinds of black crushing images and 3 kinds of whiteomission images with several grayscale difference levels. The results
show that the concern-ments depend on not only kinds of pictures but
also these images significantly.

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Wednesday
VHF1 - 3
9:50

December 7
The Gray Level Distortion Value for Off-Axis Image
Quality Evaluation
Y. P. Huang, W. K. Huang, M. C. Wu, C. H. Tsao, J. J. Su,
T. R. Chang, P. L. Chen, Y. C. Lin, K. Y. Lin
AU Optronics, Taiwan

A gray-level ratio distortion (GRD) value was proposed to easily evaluate
the off-axis image quality in the more sensitive gray level of humaneyes. Accordingly, the pixel structure with GRD (60o,0o) = 0.22 wasdesigned on a 32-inch advanced MVA-LCD for low color-washout atlarge viewing angle.
VHF1 - 4
10:10

A Viewing Angle Evaluation Method for LCDs
Considering Visual Adaptation Characteristics
M. Yamada, Y. Mitsumori, K. Miyazaki, M. Ishida
Fuji Photo Film, JapanA new evaluation method of viewing angle characteristics for liquidcrystal displays(LCDs) has been studied. We adopted CIE based color
difference formula for evaluating color reproduction characteristics ofLCDs, and we found that mean color difference ∆Euv of all pixels
between im-ages are well correspond to the psychophysical image
quality estimation results. Moreover, we consider adaptation state of thehuman vision, and we can obtain viewing angle evaluation index which
suited the appearance of LCD images.
VHF1 - 5
10:30

Secure Information Display by Use of Composite
Visual Cryptography of a Secret Image and
Identification Images
H. Yamamoto, Y. Hayasaki, N. Nishida
Univ. of Tokushima, Japan

We propose a secure display technique that ensures security ofdisplayed information. We have developed a set of composite visual
cryptography codes with which secret information is embedded in adisplayed image and a decoding mask, both of which show identification
images independent of the secret. With placing the decoding mask infront of an information display, the secret information is perceived when
the displayed image is viewed through the decoding mask within alimited viewing zone.

----- Break -----

11:10 - 12:15

ANA Hotel Clement Takamatsu Hiten 3

VHF2: Moving Image Quality (1)Chair：
Co-Chair：T. Kurita, NHK, Japan
Y. Shimodaira, Shizuoka Univ., Japan169

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Wednesday
VHF2 - 1:
11:10

December 7
Invited Moving Picture Response Improvement
Technology for LCD Televisions： Clear Focus
Drive
R. Otake, Y. Ishikawa, S. Kitao, T. Funamoto, K. Miyabe
Matsushita Elec. Ind., Japan

The “Clear Focus Drive technique” which improves drastically in themoving picture display performance of LCD-TVs has been successfully
developed. This technique is composed of “Motion compensation typeframe rate conversion” and “Synchronous scanning type blinking
backlight”. Then, we can reduce the hold time to cause moving picture
blurring of LCD-TVs, in the half of the conventional one. This presents arealistic video picture of LCD-TVs.
VHF2 - 2
11:40

TFT-LCD with CRT-Like Moving Picture Response
Time (MPRT)
F. T. Pai, D. Lin, S. M. Lee, H. K. Hsieh, X. Q. Chang,
C. H. Hsu, A. Chao, T. S. Jen
HannStar Display, Taiwan

A CRT-like motion picture quality of TFT-LCD was developed. The
motion picture quality evaluated by the index of moving picture responsetime (MPRT), using Otsuka MPRT-1000 system, is similar to that of
CRT. The measured average MPRT are (a) 19.30ms for TFT-LCD
without advanced over-drive technology (AOT), (b) 7.92ms for TFT-LCD
with AOT, and (c) 12.5ms for CRT monitor, respectively.
VHF2 - 3L
12:00

Proposal of High-Picture-Quality LCD System Basedon Moving Picture Simulation ”OCB Possibility for
High-Picture-Quality LCD System”
N. Yamagishi, H. Ishibashi, A. Kakinuma, T. Arai,
H. Yamagami
Fuji Photo Film, Japan

Possibilities of improvement in moving picture quality on LCD were
investigated using moving picture blur simulation. As a result, it has
been clarified that OCB mode with fast responsive capability is
promising for high performance LC TVs when 120 Hz driving coupledwith black data insertion. An LCD with moving picture display
performance substantially in the same level as that of CRT can beachieved.

----- Lunch -----

14:00 - 15:00

ANA Hotel Clement Takamatsu Hiten 3

VHF3: Moving Image Quality (2)Chair：
Co-Chair：170

J. Bergquist, Nokia Japan, Japan
N. Hiruma, NHK, Japan2005.11.02 18.23.15

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Wed./Thu.
VHF3 - 1
14:00

December 7/8
Dynamic Gamma: Applications to Hold Type Motion
Blur Reduction Using Synchronized BacklightFlashing
X.-F. Feng, H. Pan, S. Daly
Sharp Labs. of America, USA

We modeled backlight flashing using motion blur model and conductedbacklight flashing experiment on a LCD display with a LED backlight.
The LED was flashed at a fraction of the LCD frame period. We foundthat although motion blur was greatly reduced with flashing, newartifacts such as ghosting were observed. The cause is due to poor
synchronization and incorrect overdrive. Conventional overdrive can notguarantee the LCD to reach the target level at flashing time thus
causing the ghosting. We modified the dynamic gamma metric toincorporate flashing timing which reduced the ghosting.
VHF3 - 2
14:20

Moving Picture Color Artifacts Measured by Using a
Pursuit Camera System
Y. Enami, K. Oka*
Otsuka Elect., Japan*Nanosoftware, Japan

Since human eye recognizes motion blur as a distortion of bothluminance and chromaticity, motion blur should be analyzed based on
both luminance and chromaticity. we study method of evaluating coloredmotion blurring in a point of chromaticity. And colored blurring edge isevaluated from moving picture response curve of color difference ∆Euv*.
VHF3 - 3
14:40

Image Quality Degradation of Moving Pictures: Trial
to Obtain a Metric in JND Unit
K. Oka, Y. Enami*
Nanosoftware, Japan*Otsuka Elect., Japan

Motion blur is most important among many motion artifacts, which
degrade image quality. A method to determine a blur width on a pursuit
image of moving test pattern is proposed. FFT filtering by using CSF
provides stimuli curve expressing Mach band. The width is obtained
from a distance between maximum and minimum peaks. This will becalled a “Perceived Blur Edge Width”. The widths are compared withextended blur edge widths.
Author Interviews
17:30 - 18:30

Thursday, December 8
9:00 - 10:20

ANA Hotel Clement Takamatsu Hiten 3

VHF4: Color Reproduction
Chair：
Co-Chair：

H. Isono, Nippon Inst. of Tech., Japan
T. Tamura, Tokyo Polytech. Univ., Japan171

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ThursdayVHF4 - 1:
9:00

December 8
Invited Color Issues and Solutions for AMLCDTechnology
G. Marcu
Apple Computer, USA

This paper discusses few factors affecting the color rendition on typicalLCDs, with emphasis on notebook displays. The paper presents few
correction algorithms for improving color performance of these displaysin the area of gray tracking, color variation with the viewing angle andresponse time. The implementation of each algorithm does not require
special hardware additions or changes of the graphic system. The
solutions are general and can be applied to any LCD panel as needed.
VHF4 - 2:
9:30

Invited Comparison of Three Different Color
Sequential Display Techniques
E. H. A. Langendijk
Philips Res. Labs., The Netherlands

This paper discusses the pros and cons of three different field
sequential displays: 1) a display with no color filters using three color
fields (generated with a red, green, and blue LED), 2) a display withthree color filters, using two color fields (generated with two different
types of fluorescent lamps with different spectra), and 3) a display withtwo color filters using two color fields (generated with a green + blue
LED and a green + red LED).
VHF4 - 3
10:00

Color Reproduction Method to Reduce Color
Difference Caused by Device Drift, Imperfect
Additivity and Color Tracking
M. Takaya, T. Wakebe, Y. Shimodaira
Shizuoka Univ., Japan

A highly accurate color reproduction method is proposed for displays. In
order to reduce color difference caused by the color-tracking
phenomenon, device drift and imperfect additivity, a color conversion
method previously proposed by two of the authors, exponential
regression and linear multiple regression are adopted and the methods
are optimally combined. Applying the method to a set of 100 colors
resulted in 2 times color difference improvement compared with that of
the current standard method, the Shaper/Matrix model.

----- Break -----

10:40 - 12:25

ANA Hotel Clement Takamatsu Hiten 3

VHF5: Image Quality & Ergonomics
Chair：
Co-Chair：172

G. Marcu, Apple Computer, USA
N. Hiruma, NHK, Japan2005.11.02 18.23.15

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Thursday
VHF5 - 1:
10:40

December 8
Invited From Image Fidelity to Subjective Quality: A
Hybrid Qualitative/Quantitative Methodology for
Measuring Subjective Image Quality for Different
Image Contents
G. Nyman, J. Radun, T. Leisti, T. Vuori*
Univ. of Helsinki, Finland*Nokia, Finland

A hybrid, qualitative/quantitative measurement approach was developedfor evaluating subjective image quality of high quality, sharpness
manipulated images. The images were produced by MTF simulations
and reproduced photographically. Naive observers were used as
subjects. The approach has been applied in several contexts, but here
we demonstrate a case of subjective sharpness evaluation. The method
offers useful feedback to technical designers of imaging systems. It alsosuggests ways to develop standardized test material for different image
quality evaluation contexts.
VHF5 - 2
11:10

The Just Noticeable Difference in Color Saturation,
Black Level, White Level and Contour Rendering in
Natural Images
J. Xia, S. L. Qin, L. Liu, I. Heynderickx*, H. C. Yin
Southeast Univ., China*Philips Res. Labs., The Netherlands

To determine the relative importance of colorfulness, brightness,
contrast and sharpness on perceived image quality, we needed the justnoticeable difference in chromaticity, black level, white level and contour
rendering. Therefore, we performed a subjective experiment to measurethese just noticeable differences with natural image content instead ofwith homogeneously colored patches. The results indicate that whenusing natural image content the just noticeable differences are
considerably higher than what is reported in literature forhomogeneously colored patches.
VHF5 - 3
11:30

Simulator Sickness Symptoms in Virtual Display
GamingJ. Haekkinen*,**, J. Takatalo**, J. Komulainen**,H. Saerkelae**, J. Havukumpu***, G. Nyman***Nokia Res. Ctr., Finland**Univ. of Helsinki, Finland***Helsinki Polytechnic Stadia, Finland

We compared the simulator sickness symptoms induced by two car
racing games in Olympus head-worn virtual display and in ordinary
tabletop display. The results show that a game with fast movements andstrong optical flow induced worse symptoms than a static game without
fast movements or optical flow. There were no differences in symptoms
between the virtual display and the tabletop display. We can conclude
that the sickness was mostly caused by the optical flow shown in alarge visual field either in the virtual or in the tabletop display.

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Thursday
VHF5 - 4
11:50

December 8
Psychophysiological Effects of Monocular Head
Mount Display
S. Kishi, T. Yamazoe, T. Shibata, T. Kawai
Waseda Univ., Japan

In this study, the authors examined the psycho-physiological effects
related to asthenopia and caused by viewing image contents using a
monocular head mount display(HMD). In the psychological responses,
although a significant increase in asthenopic subjective symptoms wasfound after 30 minutes’ viewing, recovery to near pre-viewing conditions
was possible by taking 15 minutes rest. On the other hand, in terms ofphysiological responses, few changes of the refraction of the eye after
viewing were found.
VHF5 - 5L
12:10

Correlation between Objective and Subjective
Evaluations of Sensation of Presence for Designing
Future Television System
M. Sugawara, M. Emoto, K. Masaoka, Y. Nojiri
NHK, Japan

This paper describes experiments on evaluating the sensation ofpresence conducted to obtain a guide in developing a future television.
Subjective and objective evaluations were performed under the same
conditions. For the objective measurements, body sway was used as anindex for human equilibrium stability. A seven-grade categorical method
was used for the subjective evaluation. The correlation coefficient
between these results was 0.13.
Author Interviews
17:30 - 18:30

15:00 - 17:00

Citizen’s Gallery

Poster VHFp: Human Factors and Image Quality
VHFp - 1

Measurement Method of the Vision of the Elder
Driver in Driving Situation
T. Hagi, Y. Takagi, A. Yasui, T. Nakano, S. Yamamoto
Meijo Univ., Japan

Aging goes on rapidly in Japan and traffic accidents of elderly driver are
increasing. A main cause of the accidents is that most elderly drivers
are not aware of the reduction in their visual functions. The purpose ofthis research is to develop the system that measures the elderly visual
perceptions necessary for safe driving and improves their perceptions byeducation and training. This paper describes how to measure mainvisual perceptions; visual field, dynamic visual acuity and depth
perception.

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Thursday
VHFp - 2

December 8
Ambient Illumination Influences on Legibility ofElectronic Paper
S.-C. Jeng, Y.-R. Lin, C.-C. Liao, C.-H. Wen, C.-Y. Chao*,
K.-K. Shieh*Ind. Tech. Res. Inst., Taiwan*Nat. Taiwan Univ. of Sci. & Tech., Taiwan

Influences of ambient illuminance and light source on legibility ofelectronic paper, electrophoretic display and cholesteric liquid crystal
display, have been studied and compared with conventional office paper.
Legibility was evaluated by using the method of letter-search task andsubjective visual comfort rating. The results show that legibility depends
on the illumination level but light source. Paper has the highest visual
comfort rating than the other two displays although they have similar
performance in the letter-search task.
VHFp - 3

Relation between Just Noticeable Difference(JND)
Contrast of mura in LCDs and Its Background
Luminance.
T. Tamura, K. Tanaka, T. Satoh, T. Furuhata
Tokyo Polytechnic Univ., JapanThe relation between “just noticeable difference (JND) contrast” of theluminance non-uniformity, or “mura”, of liquid crystal displays and its
background luminance was investigated. We have carried out two
experiments in order to estimate the change of JND contrast on various
background luminance levels. In this paper, we analyze the relation
between JND contrast and its background luminance based on the
results of the experiments. And then, we propose a formula which
express the JND contrast on various background luminance levels.
VHFp - 4

The Dithering Algorithms for Stitching Exposure in
TFT-LCD Panels
G. F. Wei, F. Liu, M. S. Lai, A. Wang
AU Optronics, Taiwan

Stitching mura is always a concern while using stitching exposure to
produce large-size TFT-LCD panels. The study here shows that using
different algorithms can make some improvement to the stitching mura.
If dithering codes can be examined and slightly modified, it can be also
ensured that there are no unexpected periodic patterns but better
dithering effects in stitching areas. However, the more efficient and direct
way to blur stitching areas is to enlarge overlap widths of adjacentexposure shots.

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ThursdayDecember 8

VHFp - 5

Magnification Method for Displayed Image Based on
Gradient Direction and Strength by Pixel
K. Muto, F. Saitoh
Gifu Univ., JapanThe magnification of an image is important and general purposed
method for image processing. The typical conventional methods forimage magnification are the nearest neighbor, the bi-liner interpolationand the cubic convolution. These methods often generate a blurred andunclear magnified image because spatial features included in an image
are not used. This paper proposes a new magnification method by using
the gradient direction and the gradient strength by pixel in an objective
image. The experimental results show that the clear magnified images
were generated by the proposed method in comparison with by theconventional methods.
VHFp - 6

Displayed Image Generation with Higher Contrast
from Scene Image by Optimizing Combination of
FramesY. Kuze, F. Saitoh
Gifu Univ., Japan

This paper proposes a method to generate a single fixed displayed
image including an area of interest with good contrast from a scene
image including a moving object in very poor contrast. To obtain an
output image with good quality, only useful frames are selected in an
objective scene image and the selected frames are accumulated after
two-dimensional alignment.
VHFp - 7

A Novel Method for Image Contrast Enhancement:
Fuzzy Contrast Correction (FCC) Based on Timing
Controller
T.-C. Hsu, C.-F. Su, M.-S. Wu
Chunghwa Picture Tubes, Taiwan

This paper presents a new method for image contrast enhancement thatuses fuzzy theory to decide suitable enhance function. This real-timetiming controller-based method can improve the defect correction overconventional methods, and also get more colorful TFT-LCD images forbetter human vision.
VHFp - 8Integration Methods of Color Coordinate Calculation
for Ray Tracing Application
C. R. Ou**,*, C. H. Chen**LEXM Res., Taiwan**Hsiuping Inst. of Tech., Taiwan

The calculation of the CIE coordinate requires the integrate operation for
the entire visible wavelengths, but most optical software will limit the
number of wavelengths for proceed the ray tracing. This shortcommunication will discusses how the integration methods and relatedparameters affect the calculated CIE coordinates.

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ThursdayDecember 8

VHFp - 9

3-D Interpretation of Single Line Drawings in
Perspective Projection
J. Kawashima, K. Shoji, F. Toyama, J. Miyamichi
Utsunomiya Univ., JapanThe human visual system can interpret 2-D line drawings as 3-D wire
frames. Previously, we proposed a principle to minimize the entropy ofangle distribution between line segments in a 3-D wire frame as aconcrete definition of the law of Pragnanz in Gestalt psychology for 3-D
interpretation of line drawings. And we implemented the principle as asimulation model using a genetic algorithm. In this work, we expand thetype of projection assumed in the model into perspective one.
VHFp - 10L

Age-Related Changes of Relative Luminance andContrast for LED Lights of Different Colors
H. Isono, Y. Takiguchi, C. Yamada
Nippon Inst. of Tech., Japan

Human sensitivity to color deteriorates as people grow older, becoming
less perceptive to certain colors, especially blue. This paper studied
people of various ages from teenagers to those in their 70s to find how
age affects relative luminance and contrast for LED lights of different
colors. The results showed that calculated relative luminance andcontrast by age begins to fall for LED lights, especially for blue.

IDRC
Sept. 18 – 21, 2006
Kent State University
OH, U.S.A.

Outstanding
Poster Paper Awards
Friday, December 9
12:20 – 13:30(after Takamatsu Festival)
Tamamo (3F),
ANA Hotel Clement Takamatsu
See page 8 for details
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ThursdayDecember 8

Workshop on
Projection and Large-Area Displays,
and Their Components
Thursday, December 8
15:00 - 17:00

Citizen’s Gallery

Poster LADp: Projection Display Technologies
LADp - 1

Pixel-Based Optical Feedback to Correct Aging and
Non-Uniformities in Large-Area Displays
S. Maeyaert, J. Doutreloigne, A. Van Calster
Ghent Univ., Belgium

An optical feedback mechanism is proposed to correct non-uniformities
and to extend the lifetime of LAD’s. Therefore a new addressing method
consisting of pixel per pixel addressing is described. The basic
functioning and different architectures of the optical feedback loop arepresented as well as different silicon photodetectors that were designed
in AMIS I2T technology.
LADp - 2

The Control Method of Rear-Projection TV
C.-H. Huang, W.-C. Tai, M. Liu, C.-N. Mo, S.-T. Yang
Chunghwa Picture Tubes, Taiwan

A rear-project TV which use a high intensity discharge lamp in a
projection system such as LCOS, DLP etc, A new procedure of rearproject TV control method has been used and approved, according touser turn on or off power command. User’s power on or off command
will be response immediately during the simulated on or off state. Thismethod and algorithm can be implied by using software program or IC
chip design.
LADp - 3

The Study of One-Drop-Filling Process on LCOS
Panel Manufacturing
J. M. Wang, Y. C. Lo, S. F. Liu, L. C. Huang, K. H. Chen,
K. H. Liu, H. A. Li, S. Oliver, S. T. Yang
Chunghwa Picture Tubes, Taiwan

One-Drop-Filling (ODF) process is an advanced vacuum filling process
in LCOS manufacture line. The merits not only increase the throughputof liquid crystal filling process but also reduce the number of
equipments. Studying application of ODF process in LCOS panel
manufacturing is the purpose of is this article. The accuracy of liquid
crystal drop size, the stability of seal dispensing and the nozzle size etc.
In the tiny panel manufacture are more important than those factors innormal panel manufacture.

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Thu./Fri.
LADp - 4

December 8/9
VAN LCOS Panel in 65-inch/1080p High Definition
RPTV
C. J. Lin, C. H. Huang, C. L. Liu, C. N. Mo
Chunghwa Picture Tubes, Taiwan

CPT has developed a VAN mode LCOS microdisplays, which inherits
the advantages of conventional drive the VAN mode LCOS such as
contrast ratio than 3000:1, high resolution, high efficiency and highreliability. The VAN mode LCOS microdisplays offers substantial increasein system contrast and excellent quality picture has been achieved.
LADp - 5

A Study of Stability for LCOS Optical Engine
Y. Kuo, Y. Chen, S. Wu, C. Mo
Chunghwa Picture Tubes, Taiwan

CPT has developed a Liquid Crystal on Silicon (LCOS) optical engine
with the color management system, which has the high performance inimage quality. In this article we have done some long-time measurementof optical qualities to test the stability of this LCOS optical engine. The
result shows that the optical engine maintains good stability during thetest.
LADp - 6

An Instrument Design for Measuring the Chromatic
Focal Shift to Optimize the Image Quality of LCOSRPTV System
W.-C. Lin, W.-C. Tai, S.-M. Wu, C.-N. Mo, S.-D. Shei*
Chunghwa Picture Tubes, Taiwan*Univ. of Chung-Yung, Taiwan

When the different wavelength of light passing through the projection
lens, it will cause the “Chromatic Focal shift”. The phenomenon will
reduce the quality of LCOS RPTV system. In this paper, an instrument
was designed for measuring this phenomenon, it provides the sufficient
data for us to correct the BFL (Back Focal Length) when alignment theposition of panel, and then optimizing the image quality in LCOS RPTV,
which is critical in color focusing for its high resolution.

Friday, December 9
9:00 - 10:15

ANA Hotel Clement Takamatsu Hiten 3

LAD1: Market and Trend
Chair：
Co-Chair：K. M. Guttag, Syndiant, USA
Z. Tajima, Hitachi Displays, Japan179

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FridayLAD1 - 1:
9:00

December 9
Invited Changing Projection TV and Large Display
MarketM. Takaso
Techno Syss. Res., JapanThe environment of the projection TV market has changed considerablyfrom what it was only a few years ago. This paper shows how thecompetitors, prices and front projector market have changed in recent
years. The analysis of the next steps to be taken in the industry ispresented in such a way as to expand the scope of the projection TV
business further, and to include new approaches that differ substantiallyfrom the con-ventional methods of selling large-screen TVs.
LAD1 - 2:
9:25

Invited Advancements in DLP Technology: The New
10.8μm Pixel and Beyond
J. Grimmett, J. Huffman
Texas Instrs., USA

The competitive display market has driven demanding requirements on
cost and performance to the panel manufacturers. Texas Instruments,
Inc. DLP Technology has positioned the design and process of theDigital Micromirror Device (DMD) to enable higher performance andresolution at reduced cost. The key attribute to the design and processadvancements is pixel pitch scaling. This presentation will detail this
attribute and other advancements that are driving the direction for the
future DLP microdisplay.
LAD1 - 3:
9:50

InvitedNew Technological Trend in HTPS TFT LCD

S. Koike
Seiko Epson, JapanThe MD PTV market has continued to grow. We have achieved highperformance HTPS TFT LCD for the consumer market by developing
new driving technology and new formation technology of the alignment
layer. This time, we are introducing brand-new technology of HTPS TFT
LCD that continue to evolve and achieve high performance from animage quality and cost competitiveness standpoint.

----- Break -----

10:40 - 12:25

ANA Hotel Clement Takamatsu Hiten 3

LAD2: Optics and Imaging
Chair：
Co-Chair：180

A. Conner, 3MPO, USA
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FridayLAD2 - 1:
10:40

December 9
Invited Wide-Angle Projection Optics for Thin Rear
Projectors
M. Kuwata, T. Sasagawa, K. Kojima, J. Aizawa, A. Miyata,
S. Shikama
Mitsubishi Elec., JapanOne of the most significant problems in rear projector technology is how
to reduce equipment depth. Thanks to studies on wide-angle projection
optics that shortens the rear projector depth, the projection angle has
steadily increased. We report on the recent progress of wide-angle
projection optics for rear projectors and examples of systems we havedeveloped.
LAD2 - 2
11:05

Highly-Reliable, Precise and Uniform Optical Trim
Retarders Based on All-Dielectric Nano-Gratings for
LCOS Projection Systems
J. Wang, P. Sciortino, F. Liu, R. Varghese, A. Nikolov,
X. Deng, J. Bacon
NanoOpto, USA

Based on all-dielectric nano-gratings, we developed optical trim
retarders which are highly reliable, precise and uniform with a size up to
100 mm in diameter. Various retardance values from ~ 4nm to ~ 20 nm
for R, G, and B bands were realized with a standard deviation of < 5%across a 100 mm diameter size. Those trim retarders are highly reliablewith extremely low thermal dispersion. LCOS projectors based on thetrim retarders have achieved > 4000:1 contrast.
LAD2 - 3
11:25

A New LCD Projection System Using a Scrolling
Prism for the Moving Picture
H. Kojima, Y. Itoh, K. Hiramatsu, O. Wada
Seiko Epson, JapanA new LCD projection system has been developed with improved
moving picture quality. The system uses a scrolling prism that scans anillumination light on the LCD panel. As a result, the hold-type display
becomes an imitative impulse-type display and the system is able toreduce motion blur in hold-type displays such as LCD panels.
LAD2 - 4
11:45

Evaluation of Super Fine-Pitch Screen for Rear
Projection TV
Y. Igarashi, S. Iwata, A. Kagotani, S. Takahashi, T. Abe
Toppan Printing, Japan

Recently, the demand on large-size display has increased and an
advanced screen for application on LCD/LCOS/DMD Rear Projection TV
has been developed. We achieved a lenticular lens of 64μm pitch tocorrespond to such TV. In this paper, we report the results that wemeasured the optical properties and image reproducibility of 64μm
lenticular lens screen.

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FridayDecember 9

LAD2 - 5
12:05

Estimation of LCOS Rear Projection TV Throughput
Y. Chen, S. Wu, C. Mo
Chunghwa Picture Tubes, Taiwan

The design of illumination system of integrator is important for DLP or
LCoS projectors, because this effects engine throughput which is
directly expressed on screen luminance. In this paper, we summary
some issues about projection efficacy between single, triple panel LCOS
and DLP systems and predicted to have an accuracy of +/-10% withnew developed optical engine. The designed and constructed systemwith >400 lumen under 120W lamps has the potential for consumer
market.

----- Lunch -----

14:00 - 15:25

ANA Hotel Clement Takamatsu Hiten 3

LAD3: Light Source and Illumination
Chair：
Co-Chair：S. Dewald, Texas Instruments, USA
K. Ohara, Texas Instruments Japan, Japan

LAD3 - 1:
14:00

Invited System Performance Considerations in Using
LEDs as the Illumination Source for Microdisplay
Rear Projection TV
R. Auerbach, S. Magarill, A. Conner, T. Rutherford,
E. English
3M Precision Optics, USA

LED illumination for microdisplay television is close to commercialization. Brightness of green LEDs is the major challenge today. Achieving
the brightest TV requires careful system design as well as optimizationof the illuminator. The brightest systems use liquid crystal on silicon(LCOS) imaging devices. This paper discusses some of the design
criteria and practical considerations.
LAD3 - 2
14:25

LEXM QUBE: An LED Based MINI Projector forPortable Device
R. Tzeng*, C. H. Chen*, R. Her*, C. R. Ou*,***LEXM Res., Taiwan**Hsiuping Inst. of Tech., Taiwan

In this article, we propose a mini projector system with LCOS panel
called LEXM QUBE. The size of this optical engine for this system is thesmallest among the present systems with fewer LED light source.
Several comments to other technologies will be discussed.

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FridayDecember 9

LAD3 - 3
14:45

LED Based Cable-Less Projector with High
Efficiency Collimation Optics
M. Maeda, Y. Kurosaka, T. Miwa, T. Ikeda, H. Kanayama,
H. Murata
Sanyo Elec., Japan

By using a new collimator comprised of four aspherical surfaces andcontrolling the luminous flux from a LED, we have developed a LEDbased compact projector with a high efficiency illumination system. The
LED as a light source enables a projector downsizing and batterydriving. In addition, using a SD-card as an image source, a cable-lesshandy projector has been realized. In this paper, we describe ourconcept of new illumination system and the characteristics of the
prototype projector.
LAD3 - 4
15:05

Illumination System Suitable for Small Imaging
Panels for Low Cost Projection Display Applications
K. Li, S. Inatsugu, A. Kazmierski*
Wavien, USA*Phoenix Elec., Japan

The Wavien’s Dual Paraboloid Reflector (DPR) system utilizes the 1:1
imaging scheme to preserve the brightness of the arc. The resulting
system is characterized by high coupling efficiency and consistency
within a wide range of arc gaps. This allows the use of high wattage;long arc gap lamps to be used while maintaining the long lifetime
required in rear projection television applications. The concept of system
lifetime versus lamp lifetime will be presented in which the system
lifetime using DPR is much longer than the system lifetime using
traditional reflectors using the same lamp.

----- Break -----

15:40 - 17:05

ANA Hotel Clement Takamatsu Hiten 3

LAD4: Light Valve
Chair：
Co-Chair：K. Li, Wavien, USA
T. Hayashi, Sumitomo 3M, Japan

LAD4 - 1:
15:40

InvitedVAN Cell Technology of Digital D-ILA

S. Shimizu, Y. Ochi, A. Nakano, S. Nakagaki
Victor, Japan

VAN mode is becoming widely used in LCOS projection systems. The
digital driving of VAN cell has a new type of disclination effect, which
does not appear in analog driving. We have successfully suppressed itusing our technologies and have developed a fully digital 1080p device.
We’ll also present the features of the RPTV using this device.

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FridayLAD4 - 2
16:05

December 9
A 1080p Digital LCOS Microdisplay Supporting
Greater Than 12-bits per Color
K. Guttag, J. Lund, C. Waller, M. Harward
Syndiant, USA

We have built an all digital LCOS microdisplay and drive board that
supports greater than 12-bits per color using Pulse Width Modulation(PWM). The device has 1920 by 1080 mirrors (1080P) with an 8.1
micron mirror pitch resulting in a 0.7inch display diagonal. A number ofdevice design and system features make it very cost effective for
consumer front and rear projection applications and scalable for both
higher resolution and smaller display sizes.
LAD4 - 3
16:25

Vcom Drift Phenomena in VAN LCOS Panels
D. Cuypers, A. Van Calster*, H. De Smet*IMEC vzw, Belgium*Ghent Univ., Belgium

Flicker is an important artefact in liquid crystal displays. From ourmeasurements on VAN LCOS devices, the so-called Vcom voltage
appears to be the main contributor to this flicker. Measurement data on
the nature and time behaviour of this Vcom will be presented. An earlyattempt for an explanation of the evolution of the Vcom voltage is also
given. This data can be useful for under-standing and eliminating flicker
in displays.
LAD4 - 4
16:45

New Driving Method for Next Generation HTPS TFT
Light Valve
H. Hosaka, H. Iisaka, T. Takeuchi, H. Kawata, K. Ishii
Seiko Epson, JapanWe developed a new driving method called “Alternate Frame Scan
(AFS)” for the fine pitch High Temperature Poly-Silicon (HTPS) TFT
Light Valve. AFS is essentially disclination-free driving method andenables the next-generation light valve structure that is smaller on the
diagonal and offer higher resolution and a higher contrast ratio thantheir predecessors.
Author Interviews
17:10 - 18:10

Supporting Organizations:Technical Group on Information Display, ITE
Technical Committee on Electronic Information Displays, Electronics
Society, IEICE
Opto-electronic Materials and Devices Study Specialty Section, IEIJ
Liquid Crystal Display Forum, JLCS

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Tuesday

December 6

Workshop on Electronic Paper
Tuesday, December 6
13:30 - 14:35

ANA Hotel Clement Takamatsu Hiten 3EP1: Electronic Paper (1)Chair：
Co-Chair：M. Omodani, Tokai Univ., Japan
H. Arisawa, Fuji Xerox, Japan

EP1 - 1:
13:30

Invited Novel Type of Bistable Reflective Display
QR-LPD Using Electronic Powder
Y. Masuda, S. Ryo, N. Nihei, R. Hattori*
Bridgestone, Japan*Kyusyu Univ., Japan

We have developed a novel reflective display using electric powder. It
has a paper-like appearance and good image stability. In addition, QRLPD is suited for flexible display applications since it does not require
either a high temperature or complicated manufacturing process. QRLPD can maintain an excellent paper-like image. In this paper, an IC
card display is proposed as one of the possible applications for flexible
QR-LPD, as a so-called electronic paper application.
EP1 - 2
13:55

Development of One-Particle EPD System
Containing Non-Electrophoretic White Particle
Dispersion
Y. Naijo, T. Kitamura
Chiba Univ., JapanWe developed one-particle electrophoretic display (EPD) system
containing electrophoretic black and non-electrophoretic white particles.
Electrophoresis of these particles was observed using parallel typeelectrodes cell. The black and white particles exhibit electrophoretic andnon-electrophoretic phenomenon, respectively. EPD device using
dispersion of these particles performed high contrast ratio. It seems thatno flocculation occurred between white and black particles.
EP1 - 3
14:15

Fabrication of Bichromal Microbeads for Rotating
Ball Display Using a Droplet Formation by
Microchannel Technique
T. Torii, T. Nisisako, T. Takahashi*, Y. Takizawa*, T. Higuchi
Univ. of Tokyo, Japan*Soken Chem. & Eng., Japan

This paper describes the fabrication of bichromal beads for rotating balldisplay using a droplet formation technique. The beads were
hemispherically black and white beads. Two phase flow of black andwhite monomer was produced in a microchannel, and thehemispherically black and white droplets were produced using “sheathflow method”. The droplets were monodispered with CV of 5%. Afterpolymerization, the beads showed good rotating performance.

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Tuesday

December 6----- Break -----

15:10 - 16:30

ANA Hotel Clement Takamatsu Hiten 3EP2: Electronic Paper (2)Chair：
Co-Chair：A. Suzuki, Ricoh, JapanS. Maeda, Oji Paper, Japan

EP2 - 1:
15:10

Invited Flexible Active-Matrix Electrophoretic
Displays for Electronic Paper Applications
H. Kawai, M. Miyasaka, A. Miyazaki, S. Nebashi,
T. Shimoda
Seiko Epson, Japan

In the paper, we review our work on flexible active-matrix electrophoretic
displays (AM-EPDs) aiming for electronic paper applications. SUFTLA, atechnology of transferring LTPS-TFTs from an original substrate onto
another, and a microencapsulated electrophoretic imaging material havebeen successfully developed and integrated to realize flexible AM-EPD
panels. A film-based 2-inch QVGA AM-EPD panel with integrated
peripheral drivers is reported as an example of results of the work.
EP2 - 2
15:35

Effect of Carbon Black on the Optical Properties of
Pigment Dispersion for the Electrophoretic Display
K. Takeshita, A. Esaki, Y. Sekine*, H. Akimoto*
Mitsubishi Chem. Group Sci. & Tech. Res. Ctr., Japan*Mitsubishi Chem., Japan

Carbon black can considerably influence the optical properties of theelectrophoretic displays, although the amount of carbon black in it issmall. The oxidation treatment for carbon black was effective to improvethe contrast ratio. The dispersant for carbon black also affected thecontrast ratio. Therefore, the appropriate selection of carbon black anddispersant for it is important in order to improve the optical properties ofthe electrophoretic displays.
EP2 - 3
15:55

Conductance of Charging Agent in Electrophoretic
Displays
A. R. M. Verschueren, F. Strubbe*, L. J. M. Schlangen,
K. Neyts*
Philips Res. Labs., The Netherlands*Ghent Univ., Belgium

A novel approach -based on electrical transient currents- is used tocharacterise the conductance process of a charging agent. Charging
agents provide the charge on pig-ments used in electrophoretic
displays, but also introduce ions in the solution. This is in-vestigated byaccurate transient current measurements in micro-cells. Satisfactory
quantitative agreement is achieved with a continuum model of migrationand diffusion. And, physical values for concentration, charge andmobility of the ions are obtained.

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Tuesday
EP2 - 4L
16:15

December 6
Flexible Active-Matrix TFT Array with Amorphous
Oxide Semiconductors for Electronic Paper
M. Ito, M. Kon, M. Ishizaki, N. Sekine
Toppan Printing, JapanWe demonstrate, for the first time, a flexible, active-matrix, electronic
paper display driven with amorphous oxide semiconductors. A
transparent and flexible backplane is deposited by standard sputtering
technique at room temperature using amorphous In-Ga-Zn-O as anactive channel, which is fully compatible with plastic substrate and large
scale manufacturing. The combination of electrophoretic front panel andamorphous oxide backplanes creates new future for flexible electronic
paper.

----- Break -----

16:50 - 17:45

ANA Hotel Clement Takamatsu Hiten 3EP3: Electronic Paper (3)Chair：
Co-Chair：T. Kitamura, Chiba Univ., JapanT. Fujisawa, Dainippon Ink & Chem., Japan

EP3 - 1
16:50

Difference of Performances of Proofing Tasks
between on Papers and Displays: A Study forElectronic Paper
M. Omodani, E. Izawa
Tokai Univ., Japan

Paper is generally preferred over displays when we must perform
proofing tasks. This is because we believe that we cannot successfully
find all mistakes when using a display. This study aims to confirm thedifferences in performance when performing proofing tasks on paperand on a display. Analysis that identifies the reason for the difference isthe final target of this study. Experimental proofing tasks on a display
showed worse error discovery rates and shorter time taken than on
paper. This result indicates that displays encourage us to hurry up andcomplete the task even thought it remains unfinished.
EP3 - 2
17:10

Rewritable Paper Using Leuco Dyes: Coloring/
Decoloring Effects of Long-Chain Alkyl GroupS. Yamamoto, H. Furuya, K. Tsutsui, Y. Bando*,
T. Sadoshima*, S. Ueno*, K. Sato*
Ricoh, Japan*Hiroshima Univ., Japan

Rewritable printing system is composed of leuco dye molecules andacidic developer molecules with long-chain alkyl groups, which exhibits
reversible colored/decolored states by varying the heat conditions. In thispaper, we discuss the structural effects of long-chain alkyl group. We
found that controlling the physical properties of the long-chain alkyl
group of the developer is the key to achieving both thermal stability of
the colored state and rapid erasability.
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Tue./Wed.

December 6/7

EP3 - 3L
17:30

Hollow Fibers Containing Various Display Elements A Novel Structure for Electronic PaperM. Nakata, M. Sato, Y. Matsuo, S. Maeda, S. Hayashi
Oji Paper, Japan

This paper describes a novel structure for electronic paper displays
using hollow fibers, which are comprised of an outer transparent
polymer tube and inner display elements (rotating balls, electrophoretic
dispersion fluid, or cholesteric liquid crystals). The fibers are prepared bya conventional melt spinning method and then woven into fabric sheets.
The resulting fabric of hollow fibers is a promising candidate forelectronic paper displays, which have flexibility and paper-like visibility
due to the woven structure.
Author Interviews
18:20 - 19:20

Wednesday, December 7
9:00 - 10:25

Sunport Hall Takamatsu Main Hall

EP4/AMD4: Active Matrix Electronic Paper
Chair：
Co-Chair：T. Asano, Kyushu Inst. of Tech., Japan
H. Kawai, Seiko Epson, Japan

EP4/AMD4 - 1: Invited Rollable Active-Matrix Electronic-Paper
9:00
Displays
H. E. A. Huitema, G. H. Gelinck, E. van Veenendaal,
P. J. G. van Lieshout, F. J. Touwslager
Philips Tech. Incubator, The Netherlands
A 100μm thick QVGA active-matrix display integrated into a functional
device prototype is presented. The active-matrix is composed ofalternating layers of organic materials and gold. A 6-mask
photolithographic process is used. An electrophoretic electronic imaging
film is laminated on top of the active matrix. The display is bendable to aradius of 7.5mm for more than 30,000 times.

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Wednesday

December 7

EP4/AMD4 - 2: Invited Rapid Switching in Multiple Color Active
9:25
Matrix Driven Electrowetting Displays
B. J. Feenstra, R. A. Hayes, R. van Dijk, R. G. Boom,
M. M. H. Wagemans, I. G. J. Camps, A. Giraldo,
B. van der Heijden
Philips Res. Labs., The Netherlands
We present the attractive properties of our active matrix driven
electrowetting displays. For the first time, we show all ingredientsrequired for realizing video-speed, full-color displays. Two colorarchitectures are presented: a single-layer display that has an improved
optical and power performance at a lower projected cost compared to
LCDs and a triple-layer display that has a revolutionary optical
performance. We demonstrate the fast switching of the electrowetting
technology by showing video content on a 170 ppi resolution display.
EP4/AMD4 - 3
9:50

Manufacturing Flexible High Information Content
Active Matrix Displays
S. E. Burns, K. Reynolds, W. Reeves, I. P. Johnson,
B. H. Pui, M. Banach, T. Brown, K. Chalmers, N. Cousins,
P. Cain, M. Etchells, C. Hayton, K. Jacobs, S. Markham,
S. Orchard, A. Menon, P. Too, S. Siddique, C. Ramsdale,
J. Herod, K. Saynor, J. Watts, T. von Werne, J. Mills,
C. J. Curling, H. Sirringhaus, K. Amundson*,
M. D. McCreary*
Plastic Logic, UK*E Ink, USA

We present a manufacturing process for flexible high information content
active matrix backplanes compatible with low cost plastic substrates.
Transistor performance, feature sizes and electrode conductivities of thisprocess have been specified to enable 800x600 pixel displays at 100
pixels per inch (PPI), driving grey scale electrophoretic media. Here we
report on early results showing this displays operation. This process has
been developed on a 350mmx350mm Prototype Line. It is scalable tolarger display sizes and higher PPI, and will enable a wide range of
flexible display products.
EP4/AMD4 - 4L 100-μm-Thick, High-Resolution Rollable AM-EPD
10:10
T. Kodaira, S. Hirabayashi, Y. Komatsu, S. Utsunomiya,
M. Miyasaka, H. Kawai, S. Nebashi, S. Inoue, T. Shimoda,
T. Whitesides*, S. Patry*, M. McCreary*
Seiko Epson, Japan*E Ink, USA
We have developed a paper-thin 100-μm-thick, high-resolution (192 ppi,)
2.1-inch QVGA flexible active-matrix electrophoretic display (AM-EPD).
The TFT backplane with integrated peripheral driver circuits was first
fabricated on a glass substrate and then transferred to a very thin (30μm) plastic film by employing Surface Free Technology by Laser
Ablation / Annealing (SUFTLA). An imaging sheet provided by E Ink
Corporation was laminated on the backplane. Fine images weresuccessfully displayed on the rollable AM-EPD.

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Wednesday

December 7----- Break -----

10:40 - 12:00

Kagawa International Conference Hall

EP5/LCT5: Flexible LCD
Chair：
Co-Chair：T. Nose, Akita Pref. Univ., Japan
Y. Toko, Stanley Elec., Japan

EP5/LCT5 - 1
10:40

Flexible Field-Sequential-Color FLC Displays Using a
Bendable Backlight Sheet with LED Chips
H. Fujikake, H. Sato, T. Murashige, Y. Fujisaki, H. Kikuchi,
T. Kurita
NHK, Japan

We have developed a flexible full color moving-image display using aplastic-substrate-based monostable ferroelectric liquid crystal (FLC)
panel and a bendable backlight sheet with thin small LED chips. The
fabricated A4-sized FLC matrix panel with 96 x 64 image pixels waslaminated with the three-primary-color backlight sheet and optical
diffuser and spacer films, and was driven by an active matrix techniqueusing external switch transistor array based on a field-sequential-color
method.
EP5/LCT5 - 2
11:00

Improvement of Dichroic Polymer Dispersed Liquid
Crystal (PDLC) Performance for Flexible Display
Using Lift-Off Technique
A. Masutani, T. Roberts, B. Schuller, A. Sakaigawa*,
A. YasudaSony Deutschland GmbH, Germany*Sony, Japan

The performance of dichroic sponge polymer dispersed liquid crystals(SPDLC) display can be improved further by incorporating a lift-off
method using a substrate covered with a fluori-nated-organosilane. The
resulting cells achieve improved contrast, improved response time,smaller switching voltages and better uniformity, compared with thepreviously reported dichroic SPDLCs. The display exhibits near magazine-standard reflectivity and contrast ratio. Fur-thermore, the lift-off
method enables rubbing-free, low temperature, roll-to-roll processing
techniques. Such displays are suitable for flexible sol-vent-sensitive,
organic thin-film transistors (TFTs).
EP5/LCT5 - 3
11:20

Inkjet Printed Cholesteric Liquid Crystal Display
J. M. Ding, Y. A. Sha, L. P. Hsin, H. L. Wang, C. C. Liao,
Y. R. Lin, C. C. Lu, C. H. Chen, I. C. Chen
Ind. Tech. Res. Inst., Taiwan

The inkjet printing technology has been used to manufacture flexible
cholesteric liquid crystal displays. The displays are fabricated from top tobottom by forming various functional layers on flexible substrates. Stablecholesteric liquid crystal droplets are obtained and jetted to fill the pixel
areas by a piezoelectric drop-on-demand inkjet printer. Our technology
has provided a novel process to fabricate a flexible, bistable, and multicolor reflective display with single display medium layer.
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Wednesday
EP5/LCT5 - 4
11:40

December 7
Flexible Photoaligned Permanent Bistable TN-LCD
X. H. Li, F. S. Y. Yeung, V. G. Chigrinov, H. S. Kwok
Hong Kong Univ. of Sci. & Tech., Hong Kong

Flexible Bistable Nematic Liquid Crystal Display (π-BTN) based on
photo-alignment technology is developed on two 200μm plastic
substrate. This display can be switched between φ and π + φ twisted
states by means of breaking anchoring condition on one of the plastic
substrates. Low baking temperature of 100℃ is needed to avoid hightemperature distorting the substrates. The advantages of bothphotoalignment and π-BTN technologies, such as no contamination ofelectrical charges and impurties, high contrast and bistability are shown.
Author Interviews
17:30 - 18:30

15:00 - 17:00

Exhibition Hall

Poster EPp: Electronic Paper
EPp - 1

A Power-Efficient Way to Operate High-Voltage
Bistable Display Drivers
A. Monte, J. Doutreloigne, A. Van Calster
Ghent Univ., Belgium

The analog and digital part of a power-efficient high-voltage bistabledisplay driver is presented. A new algorithm for the global reset and asummary of the most interesting power-saving principles that will be
used to drive the displays, together with some theoretical results and ashort description of the high-voltage switches that will be used toconnect the voltages to the display, are given.
EPp - 2

New Dichroic Dyes for Guest-Host Liquid Crystal
Mode
T. Katoh, H. Okamura
Fuji Photo Film, Japan

New anthraquinone dichroic dyes were developed, which were suitablefor TFT guest-host liquid crystal display (GH-LCD). New developed dyes
consist of liquid crystalline parts, 4-alkylcyclohexyl-4-biphenyl, which
possess both the high order parameter and solubility for fluoro
substituted host liquid crystals.

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Wednesday
EPp - 3

December 7
A New Color Electronic Paper with Organic
Electrochromic Technology
Y. Goh, S. Sunohara, M. Nishimura*, N. Kobayashi*
Japan Chem. Innovation Inst., Japan*Chiba Univ., Japan

We studied organic electrochromic materials, which showed vivid color
change to cyan, magenta or yellow upon electrochemical stimulation,from a view point of a new class of color electronic paper. The
sandwich-type cell was constructed to evaluate the electrochromic
properties. Coloring and bleaching could be repeated without any decay
over 500 cycles. Further, flexible electrochromic cell with gel polymer
electrolyte has also been demonstrated.
EPp - 4

Color Toner Display Based on the Control of ColorParticle Movement
T. Yamamoto, D. Takahashi, S. Nakamura, T. Kitamura
Chiba Univ., Japan

We studied on the movement of three particles independently to display
color image in toner display. Two positively charged color particles withdifferent amount of charge to mass ratio and negatively charged whiteparticle were enclosed in the toner display cell. Cyan, yellow and white
images were displayed by an application of voltage of a saw wave
pattern.
EPp - 5The Effect of Nano-Sized Silica on Charged Two
Particles for Reflective Paper-Like Display
S. G. Lee, S. H. Kwon, W. K. Cho, B. G. Ryu, M.-B. SongLG Elect., Korea

We manufactured reflective paper-like display (PLD) using oppositecharged two particles. The particles were composed of polymer, colorant(TiO2, carbon black) and external additives (nano-sized silica). Using
blade mixing method, the nano-sized silica was physically adsorbed on
surface of polymer particles. The surface morphology of polymer particle
was changed dramatically with changing silica content. In addition, thecoated silica affected the electrostatic property of charged polymer
particles.
EPp - 6

Optical Characteristics of EPD Utilizing
Electrophoretic Colored Particles
S. Sunohara, T. Kitamura*
Japan Chem. Innovation Inst., Japan*Chiba Univ., Japan

We have studied on electrophoretic colored particles for EPD(Electrophoretic Display) and developed a noble method for synthesis ofthese particles by complexing organic color pigment (cyan, yellow, andmagenta) with negatively charged functional polymer. The EPD using
these electrophoretic colored and TiO2 particles showed a high contrast
ratio. And we have investigated color EPD utilizing three particles, suchas electrophoretic colored, TiO2, and black particles. This color EPD
exhibited color, white, and black state by changing applied voltage
respectively.

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Wednesday
EPp - 7

December 7
Electrodeposition of Microcapsule Containing
Electrophoretic Pigments for Electrophoretic Display
A. Baba, S. Sunohara, T. Kitamura*
Japan Chem. Innovation Inst., Japan*Chiba Univ., Japan

We have recently developed the electrodeposition coating to form alayer of microcapsules for electrophoretic display. The both of
microcapsule and aqueous urethane resin move and deposite to theelectrode in an electrodeposition process. The mono layer of closepacked gelatin microcapsules is formed directly on the electrode. The
coating of microcapsule in proportion to the electrode pattern is possible
utilizing an electrodeposition process.
EPp - 8L

Development of Ultrafine Titania Nanoparticle with
Uniform Crystallographic Orientation for PowderType Electronic Paper
M. J. Lee, S. J. Hong, W. K. Kim, J. I. Han
Korea Elect. Tech. Inst., Korea

Synthetic conditions of titania nano particles as coating particles on
polymer core particles for dry powder type electronic paper were
investigated to improve uniformity of crystallographic orientation andultrafine particle size, which are important to attach charge component
uniformly on surface of ink powder. Particle size and uniformity of
crystallinity depended on concentration of source materials (C9H19NO4Ti)
in ethanol solvent, pH, and concentration of D.I. water. Finally, titania
particle with size of 10 nm and uniformly crystallized were acquired.

Supporting Organization:
The Imaging Society of Japan

Takamatsu Festival
Takamatsu Folk Entertainment
Friday, December 9
12:20 – 13:30(before Outstanding Poster Paper Awards)
Tamamo (3F),
ANA Hotel Clement Takamatsu
See page 9 for details
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ThursdayDecember 8

Topical Session on
MEMS for Future Displays andRelated Electron Devices
Thursday, December 8
9:00 - 9:10

Kagawa International Conference Hall

Opening
Opening Remarks
9:00
M. Nakamoto, Topical Session Chair
9:10 - 10:45

Kagawa International Conference HallMEMS1: Displays and Optical Devices (1)Chair：
Co-Chair：W. I. Milne, Univ. of Cambridge, UK
S. Sugiyama, Ritsumeikan Univ., JapanMEMS1 - 1: Invited Three Dimensional Optics
9:10
G. Barbastathis, G. N. Nielson*, C. W. Wong**
MIT, USA*Sandia Nat. Labs., USA**Columbia Univ., USA
We have been investigating a class of 3D optical elements where abase-band modulation of the index of refraction is imposed on a spatial
carrier. When the index modulation is weak, we refer to these elements
as “volume holograms. ” The resulting controllable shift variance resultsin depth selectivity which we have exploited for optical slicing. 3D opticalelements with high index contrast where the modulation is purely
periodic are referred to as “photonic crystals.” In this paper, we overview
the physics of 3D optics, emphasizing new means of controlling the
spatial and spectral response; then we describe in more...
MEMS1 - 2: Invited Silicon-Based Micro/Nanomechanics for
9:35
Nanoengineering
T. OnoTohoku Univ., Japan
This paper reports on recent development of micro instrumentations
based on advanced silicon technologies for nanoengineering andnanoscience. Demonstration of some miniaturized and integrated micro/
nanomechanics, including four-terminal microprobes, optical bow-tie
probes, nanomechanical sensors, multiprobe for future high-density data
storage, and carbon nanotube mechanics and carbon nanotube electron
sources for electron emission devices, are presented.

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ThursdayDecember 8

MEMS1 - 3: Invited MEMS Technologies for Micro Optics - From
10:00
Fiber Optic Communication to Display H. Toshiyoshi*,**, H. Fujita**Univ. of Tokyo, Japan**Kanagawa Ac. of Sci. & Tech., Japan
We report our recent research accomplishment in the field of opticalMEMS( microelectromechanicalsystems )using
thesiliconmicromachining technologies for both commercial-level product andlaboratory-level research and development. Fiber optic VOA (variable
optical attenuator) has been commercially released through close
collaboration with industrial partner. Besides fiber optics, we also havetarget in the consumer electronics such as image projection displays
using MEMS optical spatial light modulators. This paper also covers
MEMS color pixels that could be potentially used to develop flexible
electronic papers or posters.
MEMS1 - 4
10:25

Nanostructure for Fast Bend Transition in Liquid
Crystal π-Cells Fabricated by Nanoimprint
Technology
H. Kikuchi, K. Machida, H. Sato, T. Murashige,
H. Fujikake, F. Sato
NHK, Japan

A novel geometric structure for achieving a fast and uniform splay-tobend transition in a liquid crystal (LC) π-cell is proposed. In order toobtain the fast and uniform bend transition, we formed a nanostructurein π-cell fabricated by applying room-temperature nanoimprint
lithography (NIL) process. This novel LC device has quick, stabletransition from splay-to-bend orientation under low-driving voltage. This
NIL process can be applicable to the fabrication of display panel toachieve a uniform bend pixel distribution and a fast bend transition.

----- Break -----

11:00 - 13:00

Kagawa International Conference HallMEMS2: Fundamental Mechanism and Materials
Chair：
Co-Chair：G. Barbastathis, Massachusetts Inst. of Tech., USA
T. Ono, Tohoku Univ., Japan

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ThursdayDecember 8

MEMS2 - 1: Invited Normally Closed Microgrippers Based on
11:00
Diamond Like Carbon/Ni Bimorph and Diamond Like
Carbon/Metal/Polymer Trimorph Structures
W. I. Milne, J. K. Luo, R. Huang, J. H. He, Y. Q. Fu,
A. J. Flewitt, S. M. Spearing*, N. A. Fleck
Univ. of Cambridge, UK*Univ. of Southampton, UK
Multi-finger, normally-closed microgrippers made from a bilayer of ametal and diamond-like carbon (DLC) or a trilayer of a polymer, metal
and DLC have been analysed, simulated and fabricated. Temperaturesof ~700 K are necessary to open Ni/DLC bimorph structures.
Microgrippers made from an SU8/DLC bilayer or SU8/Al/DLC trilayer
have also been fabricated, and fully closed microcages with diametersof ~40 μm have been obtained. Using SU8 reduces the opening
temperature of these devices to only ~400 K.
MEMS2 - 2: Invited New Progress of Integration and Fusion in
11:25
MEMS
S. Sugiyama
Ritsumeikan Univ., JapanMEMS (Micro Electro Mechanical Systems), the micro integrated
systems of sensors, actuators, and controlling circuits on a silicon chip
are widely anticipated in a number of future industrial applications.
MEMS function as the active devices processing a wide variety ofsignals, including: physical (electrical, mechanical, optical, magnetic),
chemical, biological, etc. In this paper, the current situation and future
prospects about applications of multi-cellular integration, multi-axis
integration, mechanism integration, fusion of MEMS and IT, and MEMS
process technology are presented.
MEMS2 - 3
11:50

Ultrasmall In-Plane Wavelength Filter in TwoDimensional Hetero Photonic Crystals
H. Takano, B.-S. Song*, T. Asano*, S. Noda*
Matshushita Electric Works, Japan*Kyoto Univ., Japan

Highly efficient channel drop operation of an ultra-small in-plane
wavelength filter in a two-dimensional photonic crystal slab is presented,
using a device consisting of two photonic crystal slabs with different
lattice constants. A drop operation with efficiency of more than 80% is
experimentally demonstrated, significantly higher that the limit of 25% forconventional devices. It will contribute to various optical filtering andswitching applications.

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Thursday
MEMS2 - 4
12:10

December 8
Pressure Balanced Electrostatic Micro-Valve for
Miniaturized Pneumatic Systems
Y. Nishijima, H. Kawada, T. Ishida, H. Harada
Matsushita Elec. Works, Japan

A miniaturized electrostatic micro-valve with a novel pressure balanced
structure was proposed and fabricated for the demands of control
devices for miniaturized air actuators that can work in relatively highpressure pneumatic applications. The fabricated micro-valves can bearranged in array structure and have potential applications in smell
mixing device or pneumatic Braille-display. The micro-valve wasprepared using MEMS technology, which makes On/Off actuation
against the pressure of 0.7MPa and the volume flow rate of the valve
reached to 0.2L/min.
MEMS2 - 5L
12:30

White Color Flat Field Emission Lamps for High
Quality General Lighting
M. Nakamoto, H. Kominami, Y. Nakanishi, Y. Takigawa,Y. Ohgi, H. Hiraki*, M. Haba*
Shizuoka Univ., Japan*Dialight Japan, Japan

Extremely large luminous flux, uniform lumi-nance, and high luminous
efficacy white color flat field emission lamps (FELs) have been proposedand developed by the insight of high quality general lighting, by theusage of newly developed low acceleration voltage high luminance whitecolor phosphor and carbon nanowall (CNW) field emitters, to realize
high quality general lighting.
MEMS2 - 6L
12:40

Blackboard-Type Display Compatible with Large
Area MEMS
R. Shigematsu, A. Higo, H. Toshiyoshi, H. Fujita
Univ. of Tokyo, Japan

We propose a new type of an electronic re-writable blackboard thatkeeps the trace of finger-drawn strokes using the bitmap of scatting lightfrom segmental membrane. Images can be erased entirely or partiallyby releasing voltage or pulling back the membrane with magnetic force,
respectively. Thanks to the simplicity of the device structure andprinciple, the proposed display has scalability to an oversized board that
could be made by printing or embossing.
MEMS2 - 7L
12:50

A High Fill-factor Comb-driven XY-stage with
Topological Layer Switch Architecture
K. Takahashi*,**, M. Mita***, H. Fujita*, H. Toshiyoshi*,***Univ. of Tokyo, Japan**Kagawa Ac. Of Sci & Tech., Japan***Japan Aerospace Exploration Agency , Japan

We present a novel design of comb-driven double-gimbal XY-stage
actuators for a 2D optical micro lens scanner, which has been realized
for the first time by topologically separating the actuator elements in twolayers:all the electrical parts (electrodes and interconnections) are in the
SOI ( Silicon-on-Insulator ) layer, while the mechanical parts(suspensions, frame, and XY-stage) are in the substrate. The XY-stage
moved 19 μm in the X and Y direction independently.
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ThursdayDecember 8----- Break -----

14:00 - 15:25

Kagawa International Conference Hall

MEMS3: Imaging and Sensors
Chair：
Co-Chair：J. M. Kim, Samsung Adv. Inst. of Tech., Korea
H. Toshiyoshi, Univ. of Tokyo, Japan

MEMS3 - 1: Invited A 500 dpi Optical Image Sensor Using a
14:00
Short Channel a-Si:H TFT
S. H. Kim, S. H. Park, Y. D. Nam, H. J. Kim, S. M. Hong,J. H. Hur, J. Jang
Kyung Hee Univ., Korea
We developed a 500 dpi image sensor on glass with 256 x 300 pixels.
The switching and sensor devices are amorphous silicon thin-fim
transistor. The TFT with a channel legth of 2 μm exhibited a field effectmobility of 0.4 cm2/V·s, a threshold voltage of 4 V and on/off current
ratio higher than 107. A 500 dpi image sensor with 2 μm channel TFTs
for switching and sensor was demonstrated with an amorphous silicon.
MEMS3 - 2
14:25

Infrared Light Source Made of Nanocrystalline
Porous Silicon
T. Hatai, H. Uemi, T. Ichihara, T. Komoda, N. Koshida*
Matsushita Elec. Works, Japan*Tokyo Univ. of A&T, Japan

A novel infrared light source based on a nanocrystalline porous silicon(nc-PS) is fabricated. The nc-PS effectively prevents heat dissipationfrom a thin film heater formed on nc-PS. In spite of the large heater
size, this device shows fast response and wide temperature modulation.
This device can be used as a thermal image generator for operation testof an infrared camera because the heater layer has no floating structure
and can be formed into a matrix pattern.
MEMS3 - 3
14:45

New Ultrasonic Image Sensing by Nanocrystalline
Porous Silicon Ultrasonic Emitter Combined with aCondenser Microphone Array
K. Tsubaki, H. Yamanaka, K. Kitada, T. Komoda,
N. Koshida*
Matsushita Elec. Works, Japan*Tokyo Univ. of A&T, Japan

Ultrasonic three-dimensional image sensing in air has been
demonstrated using an impulse acoustic emission from nanocrystalline
porous silicon (nc-PS) device as a probing signal. Due to a completely
flat frequency response in a wide range, an ideal impulse probe signal
can be generated with no reverberations, in contrast to the case of
conventional piezo-electric transducers. In combination with a MEMStype condenser microphone array, different several objects are
successfully picked up three-dimensionally at once.

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Thursday
MEMS3 - 4
15:05

December 8
A Novel Noise Reduction Technique for the
Uncooled Infrared Image Sensor with the BulkMicromachined Pixels
H. Honda, I. Fujiwara, Y. Iida, K. Shigenaka, S. Uchikoga
Toshiba, Japan

We have developed an uncooled (thermal) infrared image sensor with aread-out circuit that can calibrate the substrate temperature variation in
every frame period. We use two types of pixels, a bulk-micromachined
infrared detection pixel and a non-bulk-micromachined reference pixel,
to null out the effect of the substrate temperature. The difference of thesignals from the two yields just the component of infrared radiation.

----- Break -----

15:45 - 17:00

Kagawa International Conference Hall

MEMS4: Displays and Optical Devices (2)Chair：
Co-Chair：J. Jang, Kyung Hee Univ., Korea
T. Komoda, Matsushita Electric Works, Japan

MEMS4 - 1: Invited Nano and Display Technologies
15:45
J. M. Kim
Samsung Advanced Inst. of Tech., Korea
No abstract was submitted.
MEMS4 - 2
16:10

Flexible Transparent Display by Plastic MEMS
Y. Taii*, A. Higo*, H. Fujita*, H. Toshiyoshi*,***Univ. of Tokyo, Japan**Kanagawa Ac. of Sci. & Tech., Japan

This paper reports a new flexible transparent image display based on
the MEMS technology of plastic materials. A pair of thin PEN(polyethylene naphthalate) films with evaporated metal reflectors arelaminated into a Fabry-Perot interferometer, and a transparent color ismade by electrostatically tuning the gap. Thanks to the flexibility of the
PEN films, the display could operate even when placed on a curved
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Thursday
MEMS4 - 3
16:30

December 8
Femtosecond-Laser-Induced Periodic Structures on
SiO2 Surface with Copper Coating
K. Tanaka, Y. Izawa*, M. Kubo, M. Fujita**, M. Nakai*,T. Norimatsu*
Matsushita Elec. Works, Japan*Osaka Univ., Japan**ILT, Japan

Femtosecond lasers can be used for forming the nano-sized periodic
structure on the surface of fused silica. However, the processing control
range is narrow and unstable due to the nonlin-earity of the multiphoton
absorption process. By coating the surface with a thin metallic film, wefound that the periodic structure can be formed easily below theordinary ablation threshold for fused silica. It is also possible to improveand control the processing quality.
MEMS4 - 4L
16:50

Color Gamut Improvement for Field Emission
Displays
Y. Hatano, K. Iida, Y. Kato, K. Kokubu, Y. Iguchi
Sony, Japan

We will report improved performance of phosphor screens optimized forfield emission display’s (FED’s) operating conditions. Factors which
influence the visual qualities of FED will be discussed including deadlayer voltage in phosphor screen as well as accelerating voltage for FED
operation. And also, we have successfully developed high resolution
FED panel (19.2” SXGA-), which performs the premium visual properties
applying these technologies and nano-Spindt type emitter technology.
Author Interviews
17:30 - 18:30

IDW '06
International Display Workshops
Dec. 6 – 8, 2006
Convention Hall Ohmi, Otsu Prince HotelOtsu, Japan
http://idw.ee.uec.ac.jp
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Tuesday

December 6

Topical Session on Accumulation andImaging Technique of Optical Information
Tuesday, December 6
13:30 - 15:00

ANA Hotel Clement Takamatsu Hiten 2

AIT1: AIT(1)Chair：
Co-Chair：

M. Ishikawa, AIST, JapanT. Kunimoto, Tokushima Bunri Univ., Japan

AIT1 - 1:
13:30

InvitedImaging by Laser-Excited THz Pulses

M. Hangyo, M. Tani, H. Kitahara
Osaka Univ., JapanNo abstract was submitted.

AIT1 - 2:
14:00

Invited Ultrafast and High Efficient Image Processing
Using Novel Coherent Control Technique
N. Tsurumachi*, S. Furue**,***, K. Komori**,***,S. Nakanishi*, H. Itoh**Kagawa Univ., Japan**AIST, Japan***CREST-JST, Japan

It is necessary to find nonlinear optical materials with high opticalnonlinearity and fast response for the future practical application of
optical imaging. For this purpose, we propose to apply a novel coherent
control method to one-dimensional photonic crystal structure withnonlinear optical materials which can enhance the nonlinear opticaleffect such as optical phase conjugation. This coherent control
technique, which uses an area-regulated laser pulse sequence, that isavailable even for inhomogeneously broadened systems such as
quantum dots ensemble or dye-doped polymer.
AIT1 - 3:
14:30

Invited Imaging of Dynamical Localized Excitations
in Coupled MEMS Oscillator Arrays
M. Sato, A. J. Sievers*
Kanazawa Univ., Japan*Cornell Univ., USA

Vibrational excitations in coupled MEMS arrays are visualized to study
nonlinear localized modes in discrete lattices. Tips of cantilevers areimaged on a 1-D CCD camera. The brightness of the image depends on
the oscillation amplitude of the cantilever so that a distribution of
amplitudes in the array can be recorded as a function of position andtime. Nonlinear localized excitations known as intrinsic localized modes
become visible experimentally.

----- Break -----

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Tuesday

December 6

15:10 - 16:40

ANA Hotel Clement Takamatsu Hiten 2

AIT2: AIT(2)Chair：
Co-Chair：M. Hangyou, Osaka Univ., Japan
N. Tsurumachi, Kagawa Univ., Japan

AIT2 - 1:
15:10

Invited Novel Properties of Luminescent Quantum
Dots and Their Application to Nano-Sensors
M. Ishikawa
AIST, Japan

Photoluminescence (PL) intermittency was examined for single CdSequantum dots (QDs) synthesized at 75 ℃．The PL intensity of single
CdSe QDs fluctuated on a subsecond time scale. The subsecond PL
fluc-tuations, the average of which was 213 ms, are different from “on”
and “off” PL blinking generally observed for QDs fluctuating on second
to minute time scale. From previous reports, we attribute the subsecond
PL intensity fluctuations to a high-density distribution of homogeneous
surface trap states.
AIT2 - 2:
15:40

InvitedCells

Spectroscopy-Tomography of Living Single-

I. Ishimaru
Kagawa Univ., Japan
We propose spectroscopy-tomography of living single-cells to measureslight changes in proteins in the cell. We can obtain the cross-sectional
images of the microsphere with a diameter of 10 μm. The distribution of
the internal submicron-defect in the microsphere can be analyzed. And
to correct the center of rotation, we propose the image processing thatuses the normalized correlation function as estimated value. The vague
internal defect becomes to be distinguished by this proposed method.
AIT2 - 3:
16:10

Invited Dynamics of Fine Structures of Elongating
Neuron Revealed with New Type of Polarized Lightand Phase Contrast Microscopy
K. Katoh, T. Otaki*
AIST, Japan*Nikon, JapanNo abstract was submitted.

Author Interviews
18:20 - 19:20

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Wednesday

December 7

Wednesday, December 7
15:00 - 17:00

Exhibition Hall

Poster AITp: AIT(3)AITp - 1

Non-Uniformity Effects and Illumination Criterions
for Biomedical Images
C. R. Ou*,**,***, R. Her**, R. Tzeng**, C. H. Chen**,R. Chang***, C. -J. Chang****,******Hsiuping Inst. of Tech., Taiwan**LEXM Res., Taiwan***Central Taiwan Univ., Taiwan****Tri-Service General Hospital, Taiwan*****Tsu-Chi Univ.,Taiwan

In this article, the effects of non-uniformity to the medical images will be
discussed. A microscopic Q value is implementing to define the images
qualities for the illumination system. The criterion that connects themacroscopic contract ratio and the Q value is established.
AITp - 2

Activity Evaluation of Chick Dorsal Root Ganglion
Cell with Continuous Microscopic Images
H. Shimizu, T. Wakimoto, K. Yamakawa
Kagawa Univ., Japan

Dorsal Root Ganglion cells of a chick embryo were cultured and theextension movement of the nerve axon and the filopodia at the growthcone was estimated with continuous microscoic images. The axon andfilopodia elongated actiovely in L-15+ NGF solution containing LFructose, their activity in the solution containing Allitol seemed to bealmost the same as in the reference solution.
AITp - 3

Effect of D-Allose on Fibroblast
M. Maeda, K. Mitani, H. Shimizu
Kagawa Univ., Japan

A research was carried out for the purpose of examining the effect ofrare sugar on fibroblast cell. The fibroblast is cultivated in a culture
solution L-15 and basic Fibroblast Growth Factor with or without DAllose. The activity of the fibroblast cell was observed by microscopy.
We found D-Allose inhibits the function of b-FGF.

IMID / IDMC2006
Aug. 22 – 25, 2006
Daegu, Korea
203

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ThursdayDecember 8

Topical Session on
Novel Imaging Devices and Systems
Thursday, December 8
13:30 - 15:05

Sunport Hall Takamatsu Small Hall 1

IDS1: Novel Imaging Devices and Systems (1)Chair：
Co-Chair：S. Kawahito, Shizuoka Univ., JapanT. Aoki, Shizuoka Univ., JapanIDS1 - 1:
13:30

Invited Extremely High-Resolution Camera Systemwith Four 1.25-in. 8M-pixel CMOS Image Sensors
K. Mitani, H. Shimamoto, T. Yamashita, R. Funatsu
NHK, Japan

A compact camera system has been developed for a 4000-scanning-line
ultra-high-definition video system nicknamed “Super Hi-Vision” for future
broadcast services conveying a strong sense of reality to the viewer.
The camera uses four 1.25-inch 8M-pixel CMOS digital imagers and the
diagonal pixel shifting method in a 4-pickup system. A 5x zoom lens anda signal processing system with a function for real-time lateral chromaticaberration correction have also been developed for the system.
IDS1 - 2:
13:55

Invited Progress of ISIS (In-situ Storage Image
Sensors) Mounted in Ultra-High-Speed Video
CamerasT. G. Etoh, H. Maruyama*, H. Ohtake*, K. Tanioka*
Kinki Univ., Japan*NHK, Japan

In 2001, an ultra-high-speed video camera of 1,000,000 fps wasdeveloped by Etoh et al. The camera equiped with a specially-designed
CCD image sensor, “ISIS”, the in-situ storage image sensor with alinear CCD storage area attached to each pixel. The progress of the
ISIS-camera family for this five years is summarized with their potential
applicabilities.
IDS1 - 3:
14:20

Invited Development of Camera System Capable of
Taking Pictures with High-Fidelity Colors
T. Ejaz, T. Horiuchi, T. Yokota, G. Ohashi, Y. Shimodaira
Shizuoka Univ., JapanA set of three optical filters was designed, and a camera system wasdeveloped using these filters in order to capture high-fidelity colors
within the gamut of vision. Photographs of the macbeth chart, and 18
pieces of clothing samples of various colors were taken. The measured
tristimulus values of the objects were compared with those of theimages captured by the camera. The average color difference, ∆Eab, wasfound to be 1.85.

204

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ThursdayDecember 8

IDS1 - 4
14:45

Adaptive Image Enhancement Using Image Feature
Extraction for Mobile System
J. S. Kim, B. Y. Kim, S. W. Kim, W. H. Choe*, M. H. Lee,J. T. Kim, C. S. Choi
Samsung Elect., Korea*Samsung Advanced Inst. of Tech., Korea

In this paper, a new algorithm and circuit of an adaptive image
enhancement technique for mobile display system is proposed. Thisalgorithm efficiently enhances luminance of original image using image
feature extraction without color distortion and realizes real timeenhancement of motion image without flicker. This circuit is implemented
in the LCD Driver IC of QVGA resolution with only 10,000 gates and 0.5
mW power consumption.

----- Break -----

15:20 - 17:00

Sunport Hall Takamatsu Small Hall 1

IDS2: Novel Imaging Devices and Systems (2)Chair：
Co-Chair：K. Mitani, NHK, Japan
N. Egami, NHK, JapanIDS2 - 1:
15:20

InvitedCMOS Time-of-Flight Range Image Sensors

S. Kawahito
Shizuoka Univ., Japan

Recent developments of time-of-flight (TOF) image sensors arereviewed. Using charge domain operation, range resolution of 1mm canbe achieved. The resolution is explained by the photon shot noise in theregion of sufficient right level. As an example of the TOF range image
sensor, the results of the implementation of a QVGS-size CMOS TOF
range image sensor are presented.

BANQUET
Wednesday, December 7
19:00 – 21:00
at Hiten (3F)
ANA Hotel Clement Takamatsu
See page 9 for details
205

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ThursdayIDS2 - 2:
15:45

December 8
Invited Characteristics of Active-Matrix HEED (HighEfficiency Electron Emission Device) and Its
Application to Image Sensing
K. Sakemura, R. Tanaka, T. Nakada, N. Negishi, Y. Okuda,
H. Satoh, A. Watanabe, T. Yoshikawa, K. Ogasawara,
M. Nanba*, S. Okazaki*, K. Tanioka*, N. Egami*,
A. Kobayashi**, N. Koshida***Pioneer, Japan*NHK, Japan**Hamamatsu Photonics, Japan***Tokyo Univ. of A&T, JapanAn active-matrix HEED with scanning driver circuits was developed foran ultra-highly sensitive compact HARP image sensor. The HEED
arrays with 256×192 pixels were fabricated as an image pickup beamsource for the HARP target in combination with conventional MOS
planar technology. The prototyped device operates well as a highsensitivity image sensor with a sufficient resolution. The way towards
ultrahigh-sensitivity and high-definition compact image sensing has been
opened by active-matrix HEEDs.
IDS2 - 3:
16:10

Invited Photoconductive Properties of Organic Film
onto CMOS Readout Circuit
S. Aihara, T. Watabe, N. Egami, M. Kubota, K. Tanioka,
N. Kamata*, D. Terunuma*
NHK, Japan*Saitama Univ., Japan

We have been studying photoconductive properties of organic films todevelop a new type of solid-state image sensor without color separation
optical systems. As a step toward this goal, the photoconductive
properties of an organic film on a CMOS readout circuit were measured.
The signal output voltage based on signal charges generated by theorganic film was clearly observed, showing great potential for thedevelopment of high-resolution prism-less color cameras.
IDS2 - 4:
16:35

Invited Photon Counting Type X-Ray Imager with
Energy Distinction
T. Aoki, Y. Ishida, Y. Makino, G. Ohashi, Y. Tomita*, H. Morii,
J. Temmyo, Y. Hatanaka**
Shizuoka Univ., Japan*Hamamatsu Photonics, Japan**Aichi Univ. of Tech., Japan

Photon counting type X-ray imager with energy distinction function wasdeveloped. This device was operated by photon counting mode for highsensitivity, energy-discrimination (in order to color-like imaging) for a
photon, and actual counts of incident X-ray photon compare withconventional X-ray imaging device, such as X-ray CCD, X-ray I.I. which
are driven by current integrated mode. Moreover, the imager could beapplied for X-ray CT, because the imager operated under the highincident condition by micro-focus X-ray source tube.

Author Interviews
17:30 - 18:30
206

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IDW/AD ’05 COMMITTEESORGANIZING COMMITTEE
General Chair:
Standing (ITE):
Standing (SID):
Standing (SID Japan Chapter):Committee (ITE):
Committee (Executive Chair):Committee (Program Chair):T. Sugiura
K. Imai
P. M. Heyman
T. Shinoda
M. Ohsawa
Y. Nagae
H. MimuraToppan Printing
Matsushita Elec. Ind.
Display Consultant, USA
Fujitsu Labs.
Hitachi
Hitachi Displays
Shizuoka Univ.

OVERSEAS ADVISORS
P. J. Bos
Kent State Univ., USA
J. Burroughes
CDT, UKP. M. Heyman
Display Consultant, USA
W. E. Howard
Howard Consulting, USA
J. Jang
Kyung Hee Univ., Korea
H.-S. Kwok
Hong Kong Univ. of Sci. & Tech., Hong Kong
A. C. Lowe
Lambent Consultancy, UK
E. Lueder
Univ. of Stuttgart/Electro-Optical Consultancy, USA
F.-C. Luo
AU Optronics, Taiwan
A. Mosley
CRL Opto, UK
M.-H. Oh
Dankook Univ., Korea
J.-N. Perbet
Thales Avionics, France
H.-P. D. ShiehNat. Chiao Tung Univ., Taiwan
D. Theis
Siemens, Germany
H. Tolner
PDP Consultant, The Netherlands
B. P. Wang
Southeast Univ., China
M.-K. Han
Seoul Nat. Univ., Korea
FINANCIAL SUPPORTING COMMITTEE
Chair:
T. Sugiura
Vice-Chair:T. Uchida
Y. ShimodairaEXECUTIVE COMMITTEE
Executive Chair:
Y. Nagae
Executive Vice-Chair:
K. Betsui
Program Chair:
Program Vice-Chair:

H. MimuraY. IimuraT. Miyashita
Program Secretary:
Y. Yang
S. Uchikoga
N. Wakita
H. ItoT. Suzuki
Publication Chair:T. Shiga
Publication:
M. DateM. Suzuki
H. Tanizoe
M. Uchidoi
Treasurer:
M. Hasegawa
General Secretary:
T. Taguchi
Local Arrangement Chair: I. Ishimaru
Local Arrangement:
S. Hata
Y. Mihara
H. ItoToppan Printing
Tohoku Univ.
Shizuoka Univ.
Hitachi Displays
Fujitsu Hitachi Plasma
Displays
Shizuoka Univ.
Tokyo Univ. of A&T
Tohoku Univ.
Sony
ToshibaMatsushita
Kagawa Univ.
ZEON
Univ. of Electro-Commun.
NTT
Merck
NEC Display Solutions
Pioneer
IBM Res.
Toppan Printing
Kagawa Univ.
Kagawa Univ.
Kagawa Univ.
Kagawa Univ.
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S. Kurozumi
H. Ohnishi
K. Fukuda
M. Takagi
A. Uemura
Senior Executive Member: T. Uchida
S. Naemura
Y. Shimodaira
H. Uchiike
H. Kobayashi
Committee:
LCT WS
H. Fuijkake
AMD WS
K. Takatori
FMC WS
K. Niwa
CRT WS
S. Shirai
PDP WST. Ogawa
Exhibition Chair:
Exhibition Vice-Chair:
Exhibition:

PH WS
FED WS
OLED WS
3D WS
VHF WS
LAD WSEP WS
MEMS TSAIT TSIDS TS
Members

M. Shiiki
M. Nakamoto
R. Hattori
S. YanoT. Tamura
M. Takaso
H. Arisawa
T. Komoda
S. Nakanishi
S. Kawahito
M. Anma
H. AraiY. Chikazawa
K. Dantani
M. Hasegawa
Y. Hirai
H. HoriS. Hoshino
S. Hotta
N. Ibaraki
H. Inoue
M. Inoue
Y. Ishii
S. Itoh
S. Kakita
S. Kaneko
M. KanoH. Kawakami
K. Kobayashi
S. Kobayashi
Y. Komiya
S. Kurozumi
T. Kusumoto
M. Maeda
K. Matsuhiro
M. Matsuura
S. Mikoshiba
H. Mori

208

FUTEC
Ehime Univ.
Tokushima Bunri Univ.
Harison Toshiba Lighting
Ehime Univ.
Tohoku Univ.
Merck
Shizuoka Univ.
Tokushima Bunri Univ.
NHK
NEC
JSR
Hitachi Displays
Fujitsu Hitachi Plasma
Display
HitachiShizuoka Univ.
Kyushu Univ.
NHK
Tokyo Polytechnic Univ.
Techno Syss. Res.
Fuji Xerox
Matsushita Elec. Works
Kagawa Univ.
Shizuoka Univ.
Corning Japan
Thomson Japan
Dai Nippon Printing
IBM Res.
Optrex
Konica Minolta Sensing
Panasonic
Toshiba Matsushita
Display Technology
Hitachi High-Tech.
Toyo
Sharp
FutabaKasei Optonix
NEC
Alps Elec.
Hitachi Displays
Mitsubishi Elec.
Tokyo Univ. of Sci.
Yamaguchi
Olympus Optical
Futec
Idemitsu Kosan
Maeda Consulting
Arisawa Manufacturing
Sharp
Univ. of Electro-Commun.
Fuji Photo Film

2005.11.04 19.54.30

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H. Murakami
T. Nagatsuka
Y. Nishimura
K. Niwa
T. Nonaka
K. Nunomura
M. Ohsawa
S. Okabayashi
S. Okuda
H. SaitoT. Saito
S. Sakamoto
A. Sasaki
F. SatoH. SekiK. Shibata
T. Shinoda
S. Shiwa
M. Sumitomo
T. Sunata
K. Suzuki
T. Suzuki
T. Taguchi
M. Takagi
K. Takeuchi
Y. Takeuchi
Y. Takiguchi
K. Tanaka
C. Tani
K. Tanitsu
Y. Toko
M. Tsumura
M. Uchidoi
K. Uchikawa
S. UemuraY. Ukai
T. Ushiki
S. Yamamoto
Y. Yanagi
H. Yokoyama
M. Yokozawa
M. YukiWorkshop/Topical Session Chair:
LCT WS
H. Seki
AMD WSY. Yamamoto
FMC WS
Y. Iimura
CRT WS
S. Shirai
PDP WS
K. Nunomura
PH WS
H. Yamamoto
FED WS
M. Takai
OLED WS
J. Kido
3D WS
I. Yuyama
VHF WS
H. Isono
LAD WS
Z. Tajima

Dai Nippon Printing
Nitto Denko
AKT
JSR
Clariant Japan
Pioneer
Hitachi
Meijyo Univ.
Mitsubishi Elec.
ChissoTokyo Cathode Lab.
Noritake Kizai
Osaka Electro-Commun. Univ.
NHK
Hachinohe Inst. of Tech.
Sanyo Elec.
Fujitsu Labs.
Tokyo Denki Univ.
Nichia Chemical Ind.
Philips Mobile Display
Syss. Kobe
SED
ZEON
Toppan Printing
Harison Toshiba Lighting
Dainippon Ink & Chem.
ICMR
Ricoh
NTT
ASTRODESIGNTokyo Ohka Kogyo
Stanley Elec.
Future Vision
PioneerTokyo Ohka Kogyo
NoritakeSony
Sanyo Epson Imaging
Devices
Seiko Instruments
TokkiNat. Inst. of Advanced Ind.
Sci. & Tech.
Tokyo Univ. of Info. Sci.
Asahi Glass
Hachinohe Inst. of Tech.
Sharp
Tokyo Univ. of A&T
Hitachi Displays
PioneerTokyo Univ. of Tech.
Osaka Univ.
Yamagata Univ.
Utsunomiya Univ.
Nippon Inst. of Tech.
Hitachi Displays
209

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EP WS
MEMS TSAIT TSIDS TS

M. Omodani
M. Nakamoto
H. ItoN. Egami

PROGRAM COMMITTEE
Program Chair:
H. Mimura
Program Vice-Chair:
Y. IimuraT. Miyashita
Program Secretary:
Y. Yang
S. Uchikoga
N. Wakita
H. ItoT. Suzuki
Committee:
LCT WS
M. Ozaki
AMD WS
S. Utsunomiya
FMC WS
H. Mori
CRT WS
Y. UedaPDP WSPH WS
FED WS
OLED WS
3D WS
VHF WS
LAD WSEP WS
MEMS TSAIT TSIDS TS

Y. Nakao
S. Okamoto
J. Ishikawa
Y. SatoM. Tsuchida
T. Kurita
H. Kikuchi
A. Suzuki
H. Fujita
T. Kunimoto
M. Nanba

Tokai Univ.
Shizuoka Univ.
Kagawa Univ.
NHK
Shizuoka Univ.
Tokyo Univ. of A&T
Tohoku Univ.
Sony
ToshibaMatsushita
Kagawa Univ.
ZEON
Osaka Univ.
Seiko Epson
Fuji Photo Film
Matsushita Toshiba Picture
Display
Asahi GlassNHK
Kyoto Univ.
JST
NICT
NHK
NHK
Ricoh
Univ. of Tokyo
Tokushima Bunri Univ.
NHK

Workshop on LC Science and Technologies
Workshop Chair:
H. Seki
Hachinohe Inst. of Tech.
Program Chair:
M. Ozaki
Osaka Univ.
General Secretary:
H. Fujikake
NHK
Program Vice-Chair:
M. Suzuki
Merck
S. Komura
Hitachi
Program Committee/
Exhibition Committee:
E. Tajima
Citizen Watch
Program Committee:
H. Okada
Toyama Univ.
R. Yamaguchi
Akita Univ.
Y. Shimizu
Nat. Inst. of Advanced Ind.
Sci. & Tech.
S. Saito
ChissoA. Mochizuki
Nano Loa
O. Okumura
Sanyo Epson Imaging
DevicesM. Kimura
JSR
K. Miyachi
Sharp
K. Ishikawa
Tokyo Inst. of Tech.
T. NoseAkita Pref. Univ.
M. Kimura
Nagaoka Univ. of Tech.
Workshop on Active Matrix Displays
Workshop Chair:
Y. Yamamoto
Program Chair:
S. Utsunomiya

210

Sharp
Seiko Epson

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Executive Committee/
Exhibition Committee:
Program Vice Chair:
Program Committee:

K. Takatori
M. Kimura
T. Asano
K. Azuma
M. Ikeda
Y. Inoue
T. Sunata
M. Tsumura
H. HamadaS. Horita
N. Matsuo

NEC
Ryukoku Univ.
Kyushu Inst. of Tech.
ALTEDEC
ToshibaNHK
Philips Mobile Display Syss.
Future Vision
Sanyo Elec.
JAIST
Univ. of Hyogo

Workshop on FPD Manufacturing, Materials and Components
Workshop Chair/
Program Vice-Chair:
Y. IimuraTokyo Univ. of A&T
General Secretary:
K. Niwa
JSR
Program Chair:
H. MoriFuji Photo Film
Vice General Secretary: K. Dantani
Dai Nippon Printing
Exhibition Committee:
T. ItohCorning Japan
Program Committee:
K. Uchikawa
Tokyo Ohka Kogyo
Y. UkaiSony
K. YamadaChissoM. Takagi
Harison Toshiba Lighting
Y. Fujimura
Nitto Denko
T. Taguchi
Toppan Printing
T. Hayashi
Sumitomo 3M
K. Shimamura
Mitsui Eng. & Shipbuilding
F. Shimo
Tokyo Electron
Y. Fujimoto
Dainippon Screen MFG
N. Yoshizaki
Canon Sales
T. Nagahara
AZ Elec. Materials
K. SaitoULVAC
T. Unate
Sekisui Chem.
J. Bruinink
Philips Res., The Netherlands
Senior Executive Member: T. Sugiura
Toppan Printing
K. Matsushima Chisso
H. Saito
ChissoWorkshop on CRTs
Workshop Chair:
Program Chair:S. Shirai
Y. UedaGeneral Secretary:
Exhibition Committee:
Program Committee:

S. Shirai
S. Okuda
T. Higuchi
T. Saito
M. Okada
H. Nakanishi
Jos Henrichs
C. H. Yeh
S. LeeS. C. Shin

Hitachi Displays
Matsushita Toshiba Picture
Display
Hitachi Displays
Mitsubishi Elec.
Matsushita Toshiba Picture
Display
Tokyo Cathode Lab.
Sony
LG.Philips Displays, The
Netherlands
Chunghwa Picture Tubes,
TaiwanLG.Philips Displays, Korea
Samsung SDI, Korea

211

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Workshop on Plasma Displays
Workshop Chair:
K. Nunomura
Program Chair:
Y. Nakao
General Secretary:
T. Ogawa
Exhibition Committee:
Program Committee:

R. Murai
S. Mikoshiba
K. Igarashi
T. Shinoda
M. Uchidoi
Y. Murakami
N. Oota
S. Sakamoto
H. Oaku

Pioneer
Asahi Glass
Fujitsu Hitachi Plasma
DisplayMatsushita Elec. Ind.
Univ. of Electro-Commun.
Univ. of Electro-Commun.
Fujitsu Labs.
PioneerNHK
D. A. P. Tech.
Noritake Kizai
HitachiWorkshop on EL Displays, LEDs and Phosphors
Workshop Chair:
H. Yamamoto
Tokyo Univ. of Tech.
Program Chair:
S. Okamoto
NHK
General Secretary/
Exhibition Committee:
M. Shiiki
Hitachi
Program Committee:
S. ItohFutabaK. OhmiTottori Univ.
K. OhnoSony
H. Kobayashi
Tokushima Bunri Univ.
M. Sumitomo
NichiaM. Katayama
Denso
M. Tamatani
Toshiba Res. Consulting
Y. Nakanishi
Shizuoka Univ.
T. Hisamune
Kasei Optonix
N. Miura
Meiji Univ.
T. Minami
Kanazawa Inst. of Tech.
T. Yagi
Lumileds Lighting Japan
H. Shimoyama
Sharp
K. WaniiFire Tech., Canada
K. Kondo
Stanley Elec.
Workshop on Field Emission Display
Workshop Chair:
M. Takai
Program Chair:
J. Ishikawa
General Secretary/
Exhibition Committee:
M. Nakamoto
Program Committee:
T. Asano
N. Egami
Y. Iguchi
H. Mimura
M. Nakamoto
S. Nakata
M. Suzuki
S. UemuraJ. M. Kim
Workshop on Organic LED Displays
Workshop Chair:
J. KidoProgram Chair:Y. SatoGeneral Secretary/
Exhibition Committee:
R. Hattori
Program Committee:
C. Adachi
M. Tsuchida
H. Takahashi
212

Osaka Univ.
Kyoto Univ.
Shizuoka Univ.
Kyusyu Inst. of Tech.
NHKSony EMCS
Shizuoka Univ.
Shizuoka Univ.
Mitsubishi Elec.
Hitachi
Noritake
Samsung, Korea
Yamagata Univ.
JST
Kyushu Univ.
Chitose Inst. of Sci. & Tech.
Pioneer
Sanyo Elec.

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T. Kusumoto
S. Miyashita
T. Tsutsui
S. Tokito
H. Miyazaki
T. Inoue
A. Mikami
T. Wakimoto
S. Naka

Idemitsu Kosan
Seiko Epson
Kyushu Univ.
NHK
Nippon Steel Chem.
TDK
Kanazawa Inst. of Tech.
Optrex
Toyama Univ.

Workshop on 3D/Hyper-Realistic Displays and Systems
Workshop Chair:
I. Yuyama
Utsunomiya Univ.
Program Chair:
M. Tsuchida
NICT
General Secretary:
S. YanoNHK
Exhibition Committee:
K. Mashitani
Sanyo Elec.
Program Committee:
Y. Komiya
Olympus
T. Fujii
Nagoya Univ.
W. -J. Hsueh
Industrial Tech. Res. Inst.,
TaiwanT. Mishina
NHK
N. Nishida
Univ. of Tokushima
S. Ohtsuka
NTT Data
J. -Y. Son
Hanyang Univ., Korea
H. Takemura
Osaka Univ.
C. Tani
ASTRODESIGN
T. Yoshida
Toppan Printing
Workshop on Applied Vision and Human Factors
Workshop Chair:
H. Isono
Nippon Inst. of Tech.
Workshop Vice-Chair:Y. Shimodaira
Shizuoka Univ.
General Secretary/
Exhibition Committee:
T. TamuraTokyo Polytechnic Univ.
Program Chair:
T. Kurita
NHK
Program Committee:
J. Bergquist
Nokia Japan
S. Clippingdale NHK
N. Hiruma
NHK
M. Idesawa
Univ. of Electro-Commun.
S. Kubota
Seikei Univ.
T. Mitsuhashi
Shobi Univ.
T. Wake
Chukyo Univ.
R. Yoshitake
IBM Japan
Workshop on Projection and Large-Area Displays, andTheir Components
Workshop Chair
Z. Tajima
Hitachi Displays
General Secretary:
M. Takaso
Techno Syss. Res.
Program Chair:
H. Kikuchi
NHK
Program Vice Chair:
T. Hayashi
Sumitomo 3M
Exhibition Committee/
Program Committee:
H. NakanoBarco
K. Fukushima
Ushio Elec.
Y. Hayashi
Sony
S. Koike
Seiko Epson
Y. Kondo
Matsushita Elec. Works
M. Masutomi
Toppan Printing
T. Ogura
Matsushita Elec. Ind.
K. Ohara
Texas Instruments Japan
S. Ouchi
HitachiS. Shikama
Mitsubishi Elec.
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K. Takeda
K. Terada
Y. Asakura
Y. Masumoto

Seiko Epson
Sanyo Elec.
Nittoh Kogaku
Panasonic Shikoku Elec.

Workshop on Electronic Paper
Workshop Chair:
M. Omodani
General Secretary:
H. Arisawa
Program Chair:
A. Suzuki
Program Committee:
T. Kitamura
S. Maeda
Y. Hotta
T. Fujisawa
H. Kawai
Exhibition Committee:
Y. TokoTokai Univ.
Fuji Xerox
Ricoh
Chiba Univ.
Oji Paper
Ricoh
Dainippon Ink & Chem.
Seiko Epson
Stanley Elec.

Topical Session on MEMS for Future Displays andRelated Electron Devices
Topical Session Chair:
M. Nakamoto
Shizuoka Univ.
General Secretary:
T. Komoda
Matsushita Elec. Works
Program Chair:
H. Fujita
Univ. of Tokyo
Program Committee:
S. Uchikoga
Toshiba
H. Fujita
Univ. of Tokyo
M. Esashi
Tohoku Univ.
S. Sugiyama
Ritsumeikan Univ.
G. Hashiguchi
Kagawa Univ.
H. Kikuchi
NHK
T. Komoda
Matsushita Elec. Works
Y. Yoshida
Mitsubishi Elec.
K. Matsumoto
OlympusT. Ooasa
Tokyo Electron
H. L. Tuller
MIT, USA
G. Barbastathis MIT, USA
T. Akinwande
MIT, USA
W. I. Milne
Cambridge Univ., UK
J. Jang
Kyung-Hee Univ., Korea
J. M. Kim
Samsung, Korea
Local Arrangements:
G. Hashiguchi
Kagawa Univ.
Exhibition Committee:
M. Nakamoto
Shizuoka Univ.
Topical Session on Accumulation and Imaging Technique of
Optical Information
Workshop Chair/
Exhibition Committee:
H. ItoKagawa Univ.
General Secretary:
S. Nakanishi
Kagawa Univ.
Program Chair:
T. Kunimoto
Tokushima Bunri Univ.
Program Committee:
H. Shimizu
Kagawa Univ.
H. Itoh
Kagawa Univ.
Topical Session on Novel Imaging Devices and Systems
Workshop Chair/
Exhibition Committee:
N. Egami
NHK
Program Chair:
M. Nanba
NHK
General Secretary:
S. Kawahito
Shizuoka Univ.
Program Committee:
N. Egami
NHK
S. Kawahito
Shizuoka Univ.
Y. Shimodaira
Shizuoka Univ.
M. Nanba
NHK
H. Mimura
Shizuoka Univ.
214

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ACADEMIC SUPPORTING ORGANIZATIONSThe Chemical Society of JapanThe Electrochemical Society of Japan (ECSJ)The Illuminating Engineering Institute of JapanThe Imaging Society of Japan
Information Processing Society of JapanThe Institute of Electrical Engineers of JapanThe Institute of Electronics, Information and Communication Engineers(IEICE)The Institute of Image Electronics Engineers of Japan
Japan Ergonomics Society (JES)
Japanese Liquid Crystal Society (JLCS)The Japan Society of Applied Physics
The Virtual Reality Society of JapanFINANCIAL SUPPORTING ORGANIZATIONS (as of October 31, 2005)
AKT, Inc.
ALPS ELECTRIC CO., LTD.
CASIO COMPUTER CO., LTD.
Chisso Corporation
Chugai Ro Co., LTD
Corning Japan K.K.
Dai Nippon Printing Co., Ltd.
FUJI PHOTO FILM CO., LTD.
Futaba Corporation
FUTEC INC.
HARISON TOSHIBA LIGHTING Corp.
Hitachi Displays
JSR Corporation
KASEI OPTONIX, LTD.
Matsushita Electric Industrial Co., Ltd.
Merck Ltd., Japan
Mitsubishi Chemical Corporation
MITSUBISHI ELECTRIC CORPORATIONNEC Corporation
NICHIA CORPORATION
Nippon Electric Glass Co., Ltd.
Nippon Steel Chemical Co., Ltd.
NORITAKE CO., LIMITEDNORITAKE ITRON CORPORATIONOTSUKA ELECTRONICS CO., LTD.
Philips Mobile Display Systems Kobe K.K.
PIONEER CORPORATIONSANYO EPSON IMAGING DEVICES CORPORATIONSED Inc.
Seiko Instruments Inc.
SEMI Japan
Semiconductor Energy Laboratory Co., Ltd.
Sharp Corporation
Sony Corporation
Sumitomo Chemical Co., Ltd. Tsukuba Research Laboratory
Technology Research Association for Advanced Display Materials(TRADIM)
Thomson Corporate Research Tokyo
Tokki Corp.
215

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TOKYO CATHODE LABORATORY CO., LTD.
Tokyo Electron Limited
TOKYO OHKA KOGYO CO., LTD.
TOPPAN PRINTING CO., LTD.
Toshiba Matsushita Display Technology Co., Ltd.
TOYO Corporation
TOYOTA INDUSTRIES CORPORATION
Ube Material Industries, Ltd.
ULVAC, Inc.
ZEON CORPORATIONIDW/AD ’05 SECRETARIAT
c/o Inter Group Corp.
Toranomon Takagi Bldg.,
1-7-2 Nishi−shinbashi, Minato-ku,
Tokyo 105-0003, Japan
LIST OF EXHIBITORS (as of October 31, 2005)AIXTRON K.K.
Aomori Support Center for Industrial Promotion
CYBERNET SYSTEMS CO., LTD.
CHUO PRECISION INDUSTRIAL CO., LTD.
FUTEC INC.
Hitachi, Ltd.
HORIBA, Ltd.
Keisoku Giken Co., Ltd.
MEIRYO TECHNICA CORP.
Nishida Lab., The University of Tokushima
NITTOH KOGAKU K.K.
Nordson Asymtek K.K.
OPTO DESIGN, INC.
Opto Science, Inc.
Otsuka Electronics Co., Ltd.
Plastic Logic Ltd.
RSoft Design Group, Inc.
Sanayi System Co., Ltd.
SEIKO ELECTRIC CO., LTD.
SHINTECH Inc.
Suzuki Yasoji Lab., TOKAI University
Tokki Corp.
Toray Research Center, Inc.
TOYO Corp.

Funds for the conference are furnished in part by the following
organizations:!The Murata Science Foundation!Kagawa Prefectural Government!Takamatsu Convention & Visitors Bureau (Takamatsu City)
216

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EVENING GET-TOGETHERWITH WINE
Monday, December 5
18:00 – 20:00
Main Hall Foyer (3F),
Sunport Hall Takamatsu(Sponsored by Merck Ltd., Japan)
See page 9 for details

EXHIBITION
12:00 – 18:00 Tuesday, Dec. 6
9:00 – 18:00 Wednesday, Dec. 7
9:00 – 18:00 Thursday, Dec. 8
9:00 – 14:00 Friday, Dec. 9
Small Hall 2 (5F)
Sunport Hall TakamatsuFree admission with your registration name tag.

BANQUET
Wednesday, December 7
19:00 – 21:00
at Hiten (3F)
ANA Hotel Clement Takamatsu
See page 9 for details

217

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Outstanding
Poster Paper Awards
Friday, December 9
12:20 – 13:30(after Takamatsu Festival)
Tamamo (3F),
ANA Hotel Clement Takamatsu
See page 8 for details

Takamatsu Festival
Takamatsu Folk Entertainment
Friday, December 9
12:20 – 13:30(before Outstanding Poster Paper Awards)
Tamamo (3F),
ANA Hotel Clement Takamatsu
See page 9 for details

IDW '06
International Display Workshops
Dec. 6 – 8, 2006
Convention Hall Ohmi, Otsu Prince HotelOtsu, Japan
http://idw.ee.uec.ac.jp

218

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PDP International Forum '05
10:00 - 15:30, Saturday, Dec. 10
History Museum (5-min walk from IDW venue)
Meet Prof. Don Bitzer, the inventor of PDP, at theluncheon with wine. Join discussion on "how todominate the TV world" with internationallywell-known scientists. Everyone is welcome.
inquiry: pdp-forum@townsend.ee.uec.ac.jp

SID 2006
Society for Information Display
Symposium, Seminar & Exhibition
June 4–9, 2006
San Francisco, CA, USA
http://www.sid.org

IMID / IDMC2006
Aug. 22 – 25, 2006
Daegu, Korea

IDRC
Sept. 18 – 21, 2006
Kent State University
OH, U.S.A.

219

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