IDW ’15

THE 22ND INTERNATIONALDISPLAY WORKSHOPS
Special Topics of Interest ons Oxide-Semiconductor TFT
s Augmented Reality and Virtual Realitys Lighting Technologiess Printed Electronics

Workshops ons LC Science and Technologies (LCT)s Active Matrix Displays (AMD)s FPD Manufacturing, Materials
and Components (FMC)s EL Displays and Phosphors (PH)s Field Emission Displays, CRTs
and Plasma Displays (FED)s OLED Displays and Related Technologies (OLED)s 3D/Hyper-Realistic Displays and Systems (3D)s Applied Vision and Human Factors (VHF)
s Projection and Large-Area Displays
and Their Components (PRJ)s Electronic Paper (EP)s MEMS and Emerging Technologies
for Future Displays and Devices (MEET)
s Display Electronic Systems (DES)s Flexible Electronics (FLX)s Touch Panels and Input Technologies (INP)

Final Program
Otsu Prince HotelOtsu, Japan
December 9 – 11, 2015

CONTENTS
Program Highlights ................................................................................ 7
General Information ............................................................................. 12
Travel Information ................................................................................ 15
Plenary Sessions
Wednesday, December 9
IDW ’15 Opening ................................................................................. 21
IDW ’15 Keynote Addresses ................................................................ 21
IDW ’15 Invited Address ...................................................................... 22
IDW ’15 Special Address ..................................................................... 22
Special Topics of Interest on Oxide-Semiconductor TFT
Thursday, December 10
AMDp1 Poster : Oxide TFT................................................................... 23
FLXp2 Poster : Flexible Electronics 2.................................................. 29
AMD1 Oxide TFT: Crystalline Oxide .................................................. 30
AMD2 High Resolution Displays Using LTPS and Oxide TFTs.......... 32
Friday, December 11
AMD3 Oxide TFT: Reliability .............................................................. 33
AMD4 Oxide TFT: TFT Fabrication Technologies .............................. 34
AMD5 Oxide TFT: Applications .......................................................... 36
AMD6 Oxide TFT: Solution Processes .............................................. 37
Special Topics of Interest on Augmented Reality and Virtual Reality
Wednesday, December 9
DES1 Various Visualization Technologies ......................................... 39
Thursday, December 10
INP3 AR and Interactive Systems.................................................... 40
DESp2 Poster : Image Processing for Augmented Reality.................. 41
Friday, December 11
3D4/VHF6 Autostereoscopic and Head-Mounted Displays ................. 42
3D5
3D/Hyper-Realistic Display Systems ...................................... 43
FMC5 Augmented Reality and Virtual Reality ................................... 44
PRJ6 Wearable Applications ............................................................ 45
Special Topics of Interest on Lighting Technologies
Wednesday, December 9
OLED2 OLED for Lighting Applications ............................................... 47

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Thursday, December 10
PH1
Phosphors for Lighting Application ......................................... 48
PHp2 Poster : Phosphors for Lighting Application ............................. 50
Special Topics of Interest on Printed Electronics
Thursday, December 10
FLXp3 Poster : Flexible Electronics 3.................................................. 52
Friday, December 11
OLED4 Advanced OLED Technologies II ............................................ 53
FLX4 Flexible Printed Electronics..................................................... 54
Workshop on LC Science and Technologies
Wednesday, December 9
LCT1 Fascinating High Resolution Panel Technologies ................... 55
LCT2 Advanced LC Materials........................................................... 56
Thursday, December 10
LCTp1 Poster : Display Evaluations .................................................... 57
LCTp2 Poster : Innovative Technology for Surface/Interface Control ..... 58
LCTp3 Poster : Optical Elements for Phase Control ........................... 60
LCTp4 Poster : IPS/FFS Display Modes ............................................. 61
LCTp5 Poster : Emerging LCD Technologies ...................................... 63
LCTp6 Poster : Liquid Crystal Lens..................................................... 65
3D2/LCT3 Autostereoscopic 3D Displays............................................ 67
LCT4 New Fast Response LCDs ...................................................... 68
Friday, December 11
FLX2/LCT5 Flexible LCDs ................................................................... 69
LCT6 IPS/FFS Display Modes .......................................................... 70
LCT7 Innovative Technology for Surface/Interface Control ............... 71
Workshop on Active Matrix Displays
Thursday, December 10
AMDp1 Poster : Oxide TFT................................................................... 73
AMDp2 Poster : Active-Matrix Devices ................................................. 79
AMD1 Oxide TFT: Crystalline Oxide .................................................. 82
AMD2 High Resolution Displays Using LTPS and Oxide TFTs.......... 84
Friday, December 11
AMD3 Oxide TFT: Reliability .............................................................. 85
AMD4 TFT Fabrication Technologies ................................................. 86
AMD5 Oxide TFT: Applications .......................................................... 88
AMD6 Oxide TFT: Solution Processes .............................................. 89
AMD7 Advanced Si Technologies ...................................................... 90

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Workshop on FPD Manufacturing, Materials and Components
Thursday, December 10
FMCp1 Poster : Materials and Components ........................................ 92
FMCp2 Poster : Display Optics and Information Technologies ............. 94
FMCp3 Poster : Manufacturing Technologies ....................................... 95
FMCp4 Poster : Film Technologies ....................................................... 96
FMC1 Materials and Components ..................................................... 97
FMC2 Display Optics and Information Technologies ......................... 98
Friday, December 11
FMC3 Manufacturing Technologies ................................................. 100
FMC4 Film Technologies ................................................................. 101
FMC5 Augmented Reality and Virtual Reality ................................. 102
Workshop on EL Displays and Phosphors
Thursday, December 10
PH1
Phosphors for Lighting Application ....................................... 104
PHp1 Poster : Phosphors ................................................................ 105
PHp2 Poster : Phosphors for Lighting Application ........................... 109
PH2
Phosphor for General............................................................ 110
Friday, December 11
PH3
Phosphor Application ............................................................ 111
Workshop on Field Emission Displays, CRTs and Plasma Displays
Friday, December 11
Opening ............................................................................................. 112
FED1 Advanced Technologies and FE Mechanism ........................ 112
FED2 FEA Fabrication Process and Novel Materials ..................... 113
FED3 Flexible Light Source Using Plasma Technologies ............... 115
Workshop on OLED Displays and Related Technologies
Wednesday, December 9
OLED1 Advanced OLED Technologies I ........................................... 117
OLED2 OLED for Lighting Applications ............................................. 118
Thursday, December 10
OLED3 OLED Materials .................................................................... 120
OLEDp1 Poster : OLED Poster .......................................................... 121
Friday, December 11
OLED4 Advanced OLED Technologies II .......................................... 127
OLED5/FLX3 Flexible OLED and OTFT ............................................ 128

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Workshop on 3D/Hyper-Realistic Displays and Systems
Thursday, December 10
3D1
Holography............................................................................ 130
3Dp1 Poster : 3D/Hyper-Realistic Displays ..................................... 131
3D2/LCT3 Autostereoscopic 3D Displays.......................................... 139
3D3
Wavefront/Light Field Recording and Rendering .................. 141
Friday, December 11
3D4/VHF6 Autostereoscopic and Head-Mounted Displays ............... 142
3D5
3D/Hyper-Realistic Display Systems .................................... 143
3D6
Floating and Omnidirectional Display Systems..................... 144
Workshop on Applied Vision and Human Factors
Wednesday, December 9
VHF1 Display Metrology ................................................................. 146
VHF2 Display Image Quality ........................................................... 147
Thursday, December 10
VHF3 Human Factors ..................................................................... 148
VHFp1 Poster: Applied Vision and Human Factors ........................... 149
VHF4 Color and Vision.................................................................... 152
VHF5 Color Rendering.................................................................... 153
Friday, December 11
3D4/VHF6 Autostereoscopic and Head-Mounted Displays ............... 154
Workshop on Projection and Large-Area Displays and Their Components

Thursday, December 10
Opening ............................................................................................. 156
PRJ1 Projection Applications ......................................................... 156
PRJp Short Presentation: Projection .............................................. 157
PRJp1 Poster : Projection ................................................................. 157
Friday, December 11
PRJ2 Projection Components and Materials .................................. 159
PRJ3 Solid State Light Source ....................................................... 161
PRJ4 Automotive Display and Lighting ........................................... 162
PRJ5 Projection Optics................................................................... 163
PRJ6 Wearable Applications .......................................................... 165
Workshop on Electronic Paper
Wednesday, December 9
EP1
Emerging Technologies for e-Paper ...................................... 167

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EP2

Electrochromic Displays........................................................ 168

Thursday, December 10
EP3Electrophoretic Displays and Applications ............................ 169
EPp
Short Presentation: Electronic Paper .................................... 170
EPp1 Poster : Electronic Paper ....................................................... 170
Workshop on MEMS and Emerging Technologies for Future Displays and Devices

Thursday, December 10
MEETp1 Poster : Emerging Technologies .......................................... 173
Opening ............................................................................................. 174
MEET1 Quantum Dots Applications .................................................. 174
Friday, December 11
MEET2 Novel Materials and Components ......................................... 175
MEET3 MEMS and Related Technologies ......................................... 177
MEET4 Nanotechnologies for Display Applications ........................... 178
MEET5 Emerging Quantum Dots and Nanotechnologies ................. 179
Workshop on Display Electronic Systems
Wednesday, December 9
DES1 Various Visualization Technologies ....................................... 182
DES2 Transparent Display Systems ............................................... 183
Thursday, December 10
DESp1 Poster : Display Electronic Systems ...................................... 184
DESp2 Poster : Image Processing for Augmented Reality................ 186
DES3 Application for Automobiles .................................................. 186
DES4 Image Processing ................................................................. 187
Workshop on Flexible Displays
Thursday, December 10
FLXp1 Poster : Flexible Electronics 1................................................ 189
FLXp2 Poster : Flexible Electronics 2................................................ 191
FLXp3 Poster : Flexible Electronics 3................................................ 192
Opening ............................................................................................. 193
FLX1/INP4 Flexible Input Devices ..................................................... 193
Friday, December 11
FLX2/LCT5 Flexible LCDs ................................................................. 194
OLED5/FLX3 Flexible OLED and OTFT ............................................ 195
FLX4 Flexible Printed Electronics................................................... 196
FLX5 Flexible Displays and Devices .............................................. 197
Workshop on Touch Panels and Input Technologies
Wednesday, December 9
Opening ............................................................................................. 199
INP1 Interactive Technologies........................................................ 199
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INP2

Touch Panel .......................................................................... 200

Thursday, December 10
INP3 AR and Interactive Systems.................................................. 201
INPp1 Poster : Touch Panel .............................................................. 203
FLX1/INP4 Flexible Input Devices ..................................................... 203
Innovative Demonstration Session
Thursday, December 10
Innovative Demonstration Session .................................................... 205
IDW ’15 Committees .......................................................................... 210
Floor Map .......................................................................................... 220
IDW ’15 Workshop Timetable ......................................................Pullout
IDW ’15 Special Topics of Interest Navigator ...............................Pullout
IDW ’15 Session Navigator ..........................................................Pullout

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PROGRAM HIGHLIGHTS
The 22nd International Display Workshops will be held as IDW ’15 forencouraging aggressive research and development of display
technologies throughout the world and especially in the Asian region.
IDW ’15 focuses on the following four special topics, which are extremely
timely, as well as fourteen active workshops.
Special Topics of Interest on
s /XIDE 3EMICONDUCTOR 4&4
s !UGMENTED 2EALITY AND 6IRTUAL 2EALITY
s ,IGHTING 4ECHNOLOGIESs 0RINTED %LECTRONICS
Workshops ons ,# 3CIENCE AND 4ECHNOLOGIES
s !CTIVE -ATRIX $ISPLAYS
s &0$ -ANUFACTURING -ATERIALS AND #OMPONENTS
s %, $ISPLAYS AND 0HOSPHORS
s &IELD %MISSION $ISPLAYS #24S AND 0LASMA $ISPLAYS
s /,%$ $ISPLAYS AND 2ELATED 4ECHNOLOGIESs $(YPER 2EALISTIC $ISPLAYS AND 3YSTEMS
s !PPLIED 6ISION AND (UMAN &ACTORS
s 0ROJECTION AND ,ARGE !REA $ISPLAYS AND 4HEIR #OMPONENTS
s %LECTRONIC 0APER
s -%-3 AND %MERGING 4ECHNOLOGIES FOR &UTURE $ISPLAYS
and Devicess $ISPLAY %LECTRONIC 3YSTEMS
s &LEXIBLE %LECTRONICS
s 4OUCH 0ANELS AND )NPUT 4ECHNOLOGIES
4HE THREE DAY CONFERENCE WILL FEATURE  PAPERS INCLUDING  +EYNOTE
addresses, an Invited address, a Special address, 102 invited presentations, ORAL PRESENTATIONS AND  POSTER PRESENTATIONS &OLLOWING PLENARYSESSION OF +EYNOTE AND )NVITED ADDRESSES IN THE 7EDNESDAY MORNINGPRESENTATIONS WILL BEGIN AND CONTINUE IN  PARALLEL ORAL SESSIONS THROUGH&RIDAY 0OSTER SESSIONS AND AUTHOR INTERVIEWS AND DEMONSTRATIONS WILL
enable participants to discuss topics in detail. This year, special address
WILL BE GIVEN BY .OBEL ,AUREATE 0ROF (IROSHI !MANO OF .AGOYA
5NIVERSITY IN THE 7EDNESDAY EVENING %XHIBITS BY UNIVERSITIES ANDDISPLAY INDUSTRY RELATED BUSINESSES WILL ALSO BE FEATURED FROM 7EDNESDAY
TO &RIDAY IN PARALLEL WITH WORKSHOPS )$7  SHOULD BE OF INTEREST TO NOT
only researchers and engineers, but also managers of companies andinstitutions in the display community.

Special Topics of Interest on Oxide-Semiconductor TFT (OXT)/XIDE 4&4S ARE NOT ONLY ONE OF THE MOST PROMISING TECHNOLOGIES IN
electronic displays but also could become key devices in all general
ELECTRONICS )N THIS )$7 YOU CAN HEAR MANY PRESENTATIONS ON BRAND NEW
technologies, such as material, device structure, fabrication processes,
transistor performance, reliability, and applications, from domestic and
INTERNATIONAL UNIVERSITY INSTITUTE AND COMPANIES .O /84 NO SUCCESS(OWEVER YOU WILL BE LUCKY BECAUSE YOU WILL GET ALL THE USEFUL INFORMATION
you need once you attend IDW.

Special Topics of Interest on Augmented Reality and Virtual
Reality (AR&VR))N RECENT YEARS !UGMENTED 2EALITY AND 6IRTUAL 2EALITY APPLICATIONS HAVEMADE SUBSTANTIAL PROGRESS BENElTTING FROM HIGH PERFORMANCE DISPLAY
devices, sensors, cameras with tracking capabilities, and computer
GRAPHICS TECHNOLOGIES 4HE &-# 73 SESSION WILL PRESENT RECENT TRENDS
IN $ DISPLAY EG HOLOGRAPHIC DISPLAY AND RETRO REmECTIVE IMAGING 4HE).0 73 SESSION WILL COVER NEW TOPICS SUCH AS 2EAL WORLD ORIENTED 5) FOR7

making everything interactive) and interactive technologies (for designing
everything in the world). The DES-WS session will introduce display
techniques for the visualization of Augmented Reality and Virtual Reality.
The talks cover various ﬁelds and thus can provide you different
perspectives on display techniques. The PRJ-WS session focuses on
wearable applications in Augmented Reality and Virtual Reality, typiﬁedby head-mounted displays. The two-session 3D-WS will highlight 3D andhyper-realistic display systems and ﬂoating and omnidirectional display
systems. The 3D-WS and VHF-WS have co-organized the session,
Autostereoscopic and Head-Mounted Displays, that focuses on 3D
display-related topics as well as vision and human factors.

Special Topics of Interest on Lighting Technologies (LIT)The Lighting Technologies of STI will cover all aspects of science andtechnologies of lighting including LED lighting, OLED lighting, ﬂexible
lighting, manufacturing of lighting, lighting materials, device structures
for lighting and internal or external efﬁciency enhancement technologies.
A highlight for IDW ’15 will be the presentations on innovative highdirectional LED lighting devices combined with the holographic
technology, development of a red phosphor with a narrow line spectra forgeneral lighting and LCD backlights with high brightness and color
quality (PH-WS), and OLED lighting technologies with high color
rendering, light-outcoupling and color conversion methods (OLED-WS).

Special Topics of Interest on Printed Electronics (PE)
Printing technologies are opening up a new era of electronic devices
with their high productivity, low cost, large scale and low environmentalburden fabrication advantages. Printed Electronics, a Special Topics ofInterest from the last year, will cover all aspects concerning printed
electronics from scientiﬁc and technological viewpoints. This year, two
Work Shops (OLED, FLX) will hold oral sessions including the printed
layer structure with white emission using an all phosphorescent system,
soluble emitting material and ﬁlm formation technologies(OLED),
solution-processed superlattice transistors and ﬂuorinated polymer for
printed electronics (FLX).

Workshop on LC Science and Technologies (LCT)The LCT workshop covers topics from fundamental studies to recent
developments in LCD technologies and LC materials. The special notesof this year are the ﬁve invited presentations related to high resolution
LCD technologies, photo alignment technologies, new LC materials for
FFS-mode LCDs and new autostereoscopic 3D displays. Moreover, new
LC technologies, such as LC lenses, and ﬂexible displays will bepresented.

Workshop on Active Matrix Displays (AMD)The AMD workshop covers Si-TFT, oxide TFT, organic TFT, OLED, andsensors. Recent paper presentations tend to focus on oxide TFT, which
may be expected to play a role in applications for higher deﬁnition LC
and OLED displays than 8k4k or 800 ppi. We highlight the oxide TFT as
a special topic of interest (STI) with six dedicated sessions covering awide area from materials, physics, devices, and processes to applications.
We look forward to your participation!

Workshop on FPD Manufacturing, Materials and Components(FMC)
The FMC workshop covers recent developments and achievements inthe ﬁelds of ﬂat panel display technologies that include materials,
components, display panel manufacturing and measurement. The oralpresentations contain 17 papers of which 8 are invited papers. In
addition, 21 posters will be presented. Since display optics is a ﬁeld withlarge number of innovations, a session is devoted to the issues and thedevelopments in this ﬁeld. Furthermore papers related to visible light
communication, materials for visible light sources, materials for 3D
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holograms, medical display issues and innovations, optical ﬁlm
innovations, liquid crystal for high performance organic ﬁeld effect
TRANSISTORS AND VIEWING ANGLE CONTROL lLM WILL BE PRESENTED 4HE &-#73 IS SUPPORTING THE !262 SESSION DEVOTED TO SPECIAL TOPICS OF
INTERESTS IN WHICH THE RECENT TRENDS IN $ WILL BE PRESENTED

Workshop on EL Displays and Phosphors (PH)This workshop presents the latest achievements in devices and
PHOSPHORS FOR EMISSIVE DISPLAYS GENERAL LIGHTING AND LIQUID CRYSTAL
backlighting. Invited talks will present emerging technologies such as
HIGH EFlCIENCY PHOSPHORS QUANTUM DOTS LIGHTING SOURCE AND BACKLIGHTS

Workshop on Field Emission Displays, CRTs and Plasma
Displays (FED)
4HIS WORKSHOP THOROUGHLY COVERS THE lELDS OF &%$ #24 AND 0$0
TECHNOLOGIES 2ECENT PROGRESS IN IMAGING DEVICES AND DISPLAYS WITH lELD
emitter arrays will be discussed. The invited talk will present a new
PROMISING ELECTRON SOURCE A SINGLE ATOM ELECTRON EMISSION SOURCE FOR
applications to electron microscopes. Additionally, fabrication processes,
ﬁeld emission characteristics and mechanisms, and applications toimaging devices under extreme conditions will be discussed. Since the
INVENTION OF PLASMA DISPLAYS IN  THERE HAS BEEN MUCH PROGRESS.OW THE 0$0 DISPLAY TECHNOLOGIES HAVE STEPPED UP TO EXPLORE MEDICALAND BIOLOGICAL APPLICATIONS 4HE CHARACTERISTICS OF A mEXIBLE LIGHT SOURCEUSING 0$0 TECHNOLOGIES WILL BE PRESENTED

Workshop on OLED Displays and Related Technologies(OLED)
4HE /,%$ WORKSHOP COVERS ALL ASPECTS OF THE SCIENCE AND TECHNOLOGIES
OF /,%$ AND OTHER ORGANIC DEVICES RANGING FROM MATERIAL RESEARCH
basic device physics to display including backplane technologies and
OTHER APPLICATIONS 4HE ORAL AND POSTER SESSIONS WILL COVER /,%$ DEVICETECHNOLOGIES INCLUDING 0RINTED %LECTRONICS 0% AS 34) /,%$ LIGHTINGTECHNOLOGIES ,)4 /,%$ EVALUATION TECHNOLOGIES AND MATERIALS 2ECENTPROGRESS SUCH AS 2 TO 2 PROCESS TECHNOLOGY HIGH PERFORMANCE /,%$
LIGHTING MOLECULAR ORIENTATION AND THERMALLY ACTIVATED DELAYED mUORESCENT
4!$& AND MATERIALS ETC WILL BE REPORTED

Workshop on 3D/Hyper-Realistic Displays and Systems (3D)This workshop focuses on recent progress in image capturing, processing
AND DISPLAY TECHNOLOGIES HIGH QUALITY IMAGE CODING AND TRANSMISSIONTECHNOLOGIES !262 TECHNOLOGIES AND VISUAL EVALUATION FOR $ AND
HYPER REALISTIC DISPLAY SYSTEMS )T COVERS DUAL MULTIVIEW STEREOSCOPIC
IMAGE AUTOSTEREOSCOPIC DISPLAY $$ IMAGE CONVERSION HOLOGRAPHY
and holographic elements, integral photography, light ﬁeld processing
AND ANALYSIS VOLUMETRIC IMAGE mOATING IMAGES OMNIDIRECTIONAL IMAGESIMMERSIVE VISUALIZATION SYSTEMS DEPTH AND SHAPE ESTIMATION $
SCANNERS AND PRINTERS MULTI HYPERSPECTRAL IMAGING MULTIPRIMARY AND
hyperspectral displays, crosstalk evaluation, visual depth and material
perception, image coding and transmission, standardization, new optical
COMPONENTS AND MORE FOR $HYPER REALITY TECHNOLOGIES 4HIS YEAR
some novel technologies will be presented as invited papers, such as FPS VIDEOS SUPER MULTIVIEW DISPLAYS mOATING DISPLAYS AND HOLOGRAMS
This workshop is intended to provide the audience with a good
opportunity to understand the latest trends in these ﬁelds. We will also
HIGHLIGHT !262 TECHNOLOGY AS A SPECIAL TOPIC OF INTEREST

Workshop on Applied Vision and Human Factors (VHF)
4HE 6(& WORKSHOP COVERS ALL TOPICS ON VISION HUMAN FACTORS AND IMAGE
quality relating to information displays. The oral and poster sessions
include lively discussions on the latest topics ranging from fundamental
THEORIES TO APPLICATIONS 7E HAVE lVE 6(& ORAL SESSIONS ON $ISPLAY-ETROLOGY $ISPLAY )MAGE 1UALITY (UMAN &ACTORS #OLOR AND 6ISION AND#OLOR 2ENDERING IN ADDITION TO A 6(& POSTER SESSION 7E ALSO HAVE A
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JOINT SESSION WITH A $ WORKSHOP ON THE THEME OF !2 !UGMENTED
2EALITY AND PROMISING GROUNDBREAKING INTERDISCIPLINARY DISCUSSIONS&OUR INVITED TALKS WILL BE GIVEN IN THE ORAL SESSIONS CONCERNING METRIC FOR
relative display gamut size, aging of eye and display design, observer
metamerism in displays, and the color rendering index required for5($46 PRODUCTION

Workshop on Projection and Large-Area Displays and Their
Components (PRJ)
4HE 02* WORKSHOP COVERS THE LATEST WEARABLE APPLICATIONS VEHICLEDISPLAY TECHNOLOGIES HEAD LIGHT SOLID STATE LIGHT SOURCES HOLOGRAMSSHORT THROW OPTICS ETC PROJECTION MAPPING !UGMENTED 2EALITY VIRTUALREALITY $ MEASUREMENT 3ENSING AND !$!3 !DVANCED $RIVING!SSISTANT 3YSTEMS AND ALL THE PROJECTION TECHNOLOGIES 4HIS YEAR OUR
SESSION WILL FOCUS ON HEAD MOUNTED DISPLAYS WEARABLE RELATEDTECHNOLOGIES LASER LIGHT SOURCES PROJECTION DEVICES SPECKLE REDUCTION
AND DRESSED PHOTON TECHNOLOGY2ECENT STUDIES OF ADVANCED TECHNOLOGIESSUCH AS AUTOMOTIVE SOLID STATE LIGHT LIGHTING !$" !DAPTIVE $RIVING"EAM VIRTUAL IMAGING FOR WEARABLE MEDICAL APPLICATIONS AND THE LATESTCOHERENT ,)$!2 SYSTEMS WILL BE FEATURED 4HERE WILL BE  PRESENTATIONS ORAL AND  POSTER INCLUDING  INVITED PRESENTATIONS IN TOTALWorkshop on Electronic Paper (EP)This workshop focuses on current topics in electronic paper including
REWRITABLE PAPER AND mEXIBLE DISPLAYS .EWLY DEVELOPED E 0APER
technologies are now eagerly sought for emerging applications such as
E "OOKS E .OTES ELECTRONIC SHELF LABELS SIGNAGE AND SMART WINDOW6ARIOUS NOVEL TECHNOLOGIES SUCH AS ELECTROPHORETIC ELECTROTHERMOPHOTOGASO CHROMICS WILL BE PRESENTED 4HERE WILL ALSO BE REPORTS ON
PROMISING APPLICATIONS FOR E 0APER IN OFlCES 3YSTEMS DEVICES MATERIALSAPPLICATIONS AND USABILITY OF E 0APER ARE EXPECTED TO BE ENTHUSIASTICALLY
discussed.

Workshop on MEMS and Emerging Technologies for Future
Displays and Devices (MEET)
4HE -%%4 WORKSHOP IS UNIQUE IN COVERING ALL ASPECTS OF -%-3
nanotechnologies and emerging technologies concerning future
displays, imaging devices, and emerging electron devices. It seeks to
BROADEN THE HORIZON OF DISPLAY AND IMAGING TECHNOLOGIES INTO CUTTING
EDGE TECHNOLOGIES 2ESEARCH AREAS SUCH AS MATERIALS BASIC PHYSICSAND FABRICATION PROCESSES ARE INCLUDED !MONG ALL THE -%-3 AND DISPLAYCONFERENCES IN THE WORLD THIS IS THE ONLY OPPORTUNITY FOR -%-3 AND
CUTTING EDGE TECHNOLOGY RESEARCHERS TO GATHER AND DISCUSS SUCH DEVICES
Authorities from top research institutions around the world in this ﬁeld
HAVE BEEN INVITED )NVITED SPEAKERS ARE FROM -)4 1$ 6ISION %COLE
0OLYTECHNIQUE #%! ,%4) "RUNEL 5NIVERSITY +YUNG (EE 5NIVERSITY .ANO 0HOTONICA -ERCK 2ITSUMEIKAN 5NIVERSITY 4OHOKU 5NIVERSITY AND+EIO 5NIVERSITY 4OGETHER WITH CONTRIBUTED PAPERS WITH HIGH QUALITY
content, this workshop is aimed at participants who wish to open up new
ﬁelds in displays, imaging devices and emerging devices.

Workshop on Display Electronic Systems (DES)This workshop covers all aspects of display electronics and systems in
relation to video data processing, interface technologies, and cooperative
operations between display components such as cells and backlights
and sensors. This year, we will have 22 papers including 9 invited talks,
 ORAL PRESENTATIONS AND  POSTER PRESENTATIONS 3ESSIONS RELATED TO THE
transparent display technologies, vehicle display technologies, and the
DRIVINGLOW POWER TECHNOLOGIES FOR ,#$/,%$ ARE PLANNED 7E WILL ALSOHIGHLIGHT VARIOUS VISUALIZATION TECHNOLOGIES RELATED TO !262 AS A 34)10

Workshop on Flexible Electronics (FLX)&,8 73 IS FOCUSING ON ADVANCED TECHNOLOGIES FOR mEXIBLE ELECTRONICS
including displays, wearable sensors, and IoT technologies, which arecomposed of a wide range of ﬁelds from materials science to practical
APPLICATIONS4HE SESSIONS COVER ALL ASPECTS OF THE HOTTEST mEXIBLE DEVICES
AND MATERIAL TECHNOLOGIES INCLUDING 4&4 FABRICATION SUBSTRATES
encapsulation, printing processes and evaluation techniques.

Workshop on Touch Panels and Input Technologies (INP)
Interface technologies such as touch panels and interactive technologies
ARE THE STARS OF THE SESSION !2)NTERACTIVE SYSTEMS SUCH AS HAPTICS AND!2 ARE SPECIAL TOPICS OF ).0 #OMPUTER VISION AND NATURAL INTERFACETECHNOLOGIES ARE STILL IMPORTANT RESEARCH TOPICS OF ).0 4HIS YEAR NEW
TOPICS WILL BE PRESENTED 2EAL WORLD ORIENTED 5) WHICH MAKES EVERYTHING
interactive and interactive technologies to design everything in the realWORLD ARE SPECIAL TOPICS ).0 PAPERS WILL OPEN A NEW WINDOW IN DISPLAYS
and interactive technologies, not only for devices but also for systems,
making them essential viewing.

IDW Best Paper Award and IDW Outstanding Poster Paper
Award)$7 WILL PRESENT h)$7 "EST 0APER !WARDv AND h)$7 /UTSTANDING 0OSTER
0APER !WARDv 4HE AWARD COMMITTEE OF )$7 WILL SELECT THE MOST
outstanding papers from those presented at IDW ’15. The award
winners will be announced on the IDW website and given a plaque after
the conference.

Innovative Demonstration Session)NNOVATIVE $EMONSTRATION 3ESSION WILL BE HELD ON $ECEMBER  AT /HMI 
and Shakunage 2. IDW provides the opportunity for an interdisciplinary
TECHNICAL DEMONSTRATION DISCUSSION IN A LARGER SPACE MORE PREPARATION
and demonstration time than in the “Author Interviews and$EMONSTRATIONSv $EMONSTRATION !WARD WILL BE AWARDED TO THE
demonstration that has the biggest impact on the audience.

Special Address.OBEL LAUREATE 0ROF (IROSHI !MANO OF .AGOYA 5NIVERSITY WILL GIVE A SPECIAL
ADDRESS AT )$7  ON THE THEME ,IGHTING THE %ARTH BY ,%$S
0ROF !MANO WAS AWARDED THE  .OBEL 0RIZE IN 0HYSICS FOR THE INVENTION
OF BLUE LIGHT EMITTING DIODES (E WILL PRESENT HIS ADDRESS AT  ON
7EDNESDAY $ECEMBER  IN /HMI 

Exhibition
4HE )$7  %XHIBITION WHICH WILL BE HELD FROM $ECEMBER  THROUGH
December 11, covers materials, components, manufacturing andmeasuring equipment, software systems and other related products
FOR DISPLAY DEVICES 0LEASE JOIN IN AND ENJOY DISCUSSIONS AT EXHIBITORSBOOTHS ,OBBY & 
$ECEMBER  7ED  n 
$ECEMBER  4HU  n 
$ECEMBER  &RI  n 

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GENERAL INFORMATIONSPONSORSHIP
IDW ’15 is sponsored by the Institute of Image Information and Television Engineers (ITE) and the Society for Information Display (SID).

CONFERENCE SITE
Otsu Prince Hotel
4-7-7, Nionohama,Otsu, Shiga, 520-8520, Japan
Phone: +81-77-521-1111 FAX: +81-77-521-1110

ON-SITE SECRETARIAT
Telephone and fax machines for IDW ’15 use will be temporarily set up
in the secretariat room (Room Eizansumire 1) at Otsu Prince Hotel(December 9-11). Phone/Fax: +81-77-521-1380

RECEPTION
A buffet style reception will be held on December 9 from 18:50 to 20:50
at the Prince Hall (3F) in Otsu Prince Hotel. As the number of tickets islimited, you are urged to make an advance reservation through theregistration website.

EVENING GET-TOGETHER WITH WINE
A get-together will be held on December 8 from 18:00 to 20:00 at Hiei
(2F) in Otsu Prince Hotel. Wine (sponsored by Merck Ltd., Japan) will
be served to participants in a relaxed atmosphere for networking.

REGISTRATION
Registration is available in advance and also on-site. However,advance registration is strongly recommended to speed up the arrival
procedure at the conference site.

Registration Fees
The registration fee for IDW ’15 includes admission to the conference
and a USB Flash Drive of the proceedings. Detailed information will beannounced on the website.
Until Oct. 30 On and After Oct. 31
Individual Member¥ 40,000¥ 50,000(ITE/SID/ASO*)
Non-Member**¥ 50,000¥ 60,000
Student***¥ 13,000¥ 15,000
Life Member of ITE/SID¥ 13,000¥ 15,000
Reception¥ 8,000¥ 10,000*ASO: Academic Supporting Organizations(See p.14 as well as “Supporting Organizations and Sponsors” at theend of each workshop section.)**Non-Member: If you intend to join either ITE or SID, the one year
membership fee will be subsidized by IDW ’15 committee.
***Photocopy of student ID is required.
Please note that the payment of reduced registration fee is accepted
until October 30. The full fee will be charged for payments made on andafter October 31. Also note that the number of reception tickets toregister on site is limited.

Proceedings Data at the Conference Site
Proceeding data can be accessed from the web-server via the wirelessnetwork only in the Free Wi-Fi Area at the conference site.
Additional proceedings (USB Flash Drive)
At the conference site
¥ 8,000
Airmail after the conference¥ 12,000
Domestic mail after the conference¥ 10,000

12

PaymentThree ways are provided for registration.

(1) e-Registration
Access the following URL.
http://www.idw.or.jp/regist.html
e-Registration will be accepted until November 27, 2015.

(2) Mail or Fax Registration
Complete the registration form (download from the website) and send it
to the secretariat shown below together with the proof of payment nolater than November 27, 2015.
IDW ’15 Secretariat
c/o Bilingual Group Ltd.
3-3-6 Kudan Minami, Chiyoda-ku, Tokyo 102-0074, Japan
Phone: +81-3-3263-1345 Fax: +81-3-3263-1264
E-mail: idw@idw.or.jp
The registration fee should be paid by one of the following methods.
1. Credit Card (VISA, MasterCard, JCB, AMEX or Diners)
2. Bank Transfer to:
Bank:
Bank of Tokyo-Mitsubishi UFJ(Swift Code: BOTKJPJT)
Branch:Ichigaya Branch (Branch No. 14)
Account No.: 0167640 (Ordinary Account)
Account:
IDW
Please attach a copy of the bank receipt to the registration form to
avoid any confusion. Please note that the remittance charges,
including that of Bank of Tokyo Mitsubishi UFJ, should be paidby the payer.
All above payments should be made in JAPANESE YEN.
Also, please note that personal and traveler’s checks are not accepted.

(3) On-site Registration
Conference registration desk will open:
December 8 (Tue.) 17:00 – 20:00
December 9 (Wed.)
8:00 – 18:00
December 10 (Thu.)
8:00 – 18:00
December 11 (Fri.)
8:00 – 13:00
On-site registration fee will be payable by:
1. Cash (JAPANESE YEN only)
2. Credit Card (VISA, MasterCard, JCB, AMEX, China Union Pay)
Bank transfer, bank checks, or personal/traveler’s checks are notaccepted.

Cancellation Policy
Until October 30, cancellation is accepted by writing to IDW ’15 Secretariat to get refunds for registration and reception. For cancellations
received on and after October 31 or no-shows, refunds will not be
made. However, after IDW ’15 closes, a USB Flash Drive of theproceedings will be sent to the registrants who have paid the registration
fees. If it becomes difficult to hold IDW ’15 due to the outbreak ofinfectious diseases and other unavoidable factors, we will substitutethe IDW with the mail delivery of the IDW ’15 proceedings at a later dateto all those who have registered and completed payment.

INQUIRIESIDW ’15 Secretariat
c/o Bilingual Group Ltd.
3-3-6 Kudan Minami, Chiyoda-ku, Tokyo 102-0074, Japan
Phone:+81-3-3263-1345 Fax: +81-3-3263-1264
E-mail: idw@idw.or.jp
13

ACADEMIC SUPPORTING ORGANIZATIONS(ASO)s The Chemical Society of Japans The Electrochemical Society of Japans The Illuminating Engineering Institute of Japans The Imaging Society of Japans The Institute of Electrical Engineers of Japans The Institute of Electronics, Information and Communication
Engineerss The Institute of Image Electronics Engineers of Japans International Electrotechnical Commission
s The Japan Ergonomics Societys The Japan Society of Applied Physics
s The Japanese Liquid Crystal Societys The Optical Society of Japans The Society of Automotive Engineers of Japans The Society of Polymer Science, Japans The Virtual Reality Society of JapanFUNDS
s Shiga Prefectures JSPS KAKENHI Grant Number 15HP0304

For final updated information, please visit our website,
http://www.idw.or.jp/

IDW/AD ’16
The 23rd International Display Workshops
in conjunction with Asia Display 2016
Dec. 7 – 9, 2016
Fukuoka Convention Center
Fukuoka, Japan
http://www.idw.or.jp
14

TRAVEL INFORMATIONACCOMMODATIONSJTB Western Japan, Corp. will handle arrangements for your hotel
reservations.
It will be very hard to book a hotel in Otsu and Kyoto in December due
to the peak tourist season. So we recommend you make reservations inadvance at the hotels recommended by IDW.
Hotel reservations can be made at the IDW official website.
http://www.idw.or.jp/accommodation.html
Hotel list and the rates are available on the Pullout of this Advance
Program.
JTB Western Japan, Corp.
Communication Division, MICE Center, IDW ’15 Desk
Phone: +81-6-6252-2861
Fax: +81-6-6252-2862
Office Hours: 9:30-17:30 (Weekdays only)
E-mail: westec_op6@west.jtb.jp
There will be an on-site travel information desk during the conference
period to handle arrangements for transportations.

VISAS
Visitors from countries whose citizens must have visas should apply to
Japanese consular office or diplomatic mission in their respective
countries. For further details, please contact your travel agency or the
local consular office in your country.
Attention: For some countries’ citizens, official documents prepared by
the secretariat will be needed. Please access the IDW website forapplications.
http://www.idw.or.jp/visa.html

JAPAN RAIL PASS AND JR WEST PASS
Japan Railway (JR) provides the following economical passes. They
should be purchased before you leave your country. Please contact yourtravel agency. Visit following sites for the details.
(1) The JAPAN RAIL PASS is the most economical way to travel
throughout Japan by rail and JR buses.
(2) The JR WEST PASS is an economical and flexible rail pass to travel
around Western Japan.
Japan Rail Pass: http://www.japanrailpass.net/en/index.html
JR West Pass: http://www.westjr.co.jp/global/en/travel-information/pass/
shop/

CLIMATE
The average temperature in Otsu during the conference should bearound 10°C (50°F) in the daytime and 3°C (37°F) at night.

15

OTSU CITY
Otsu City is easily accessible from Kyoto Station, only 9 minutes
away by train. It is located on the southern edge of Biwako, whichwith a surface area of 672 km 2 is the largest lake in Japan. It is thecapital of Shiga Prefecture and is rich in history and natural
beauty. About 1,300 years ago, it was the capital of Japan for abrief period of time. At the end of the 8th century, Kyoto became
the heart of Japan, and Otsu prospered as a gateway to Kyoto forboth land and water transportation systems, while also becoming
a center for Buddhism.
Now it is a tourist center and a port for excursion boats on Biwako.
The views from Otsu Prince Hotel are magnificent. Around twilight,
Biwako gradually changes its colors and the city starts to light up
along the shore. The city’s industrial products include electricalappliances, textiles, precision instruments, computer components, and machinery.

PLACES OF INTEREST
Biwako (Lake Biwa)
Biwako occupies 1/6 of Shiga Prefecture. More than 450 rivers
flow into the lake and there is only one natural outlet, the Seta
River.
The lake supplies water to some 14 million residents around anddownstream of the lake including Osaka, Kyoto and Kobe Cities.
There are a number of historic sites, hot springs, and other attractive tourist spots around the lake. Several types of boat cruises
start from Nagisa-Koen Park as well as from Otsu Prince Hotel.
Enryakuji Temple
The temple was founded in 788 AD by the Buddhist Priest Saicho(767–822) to protect the former capital of Kyoto from evil spirits
from the northeast. It was (and still is) the headquarters of theTendai sect, the Buddhist sect that was popular among thearistocracy of the time and served as the foundation for a numberof later sects. At the peak of its power, Enryakuji Temple was ahuge complex of 3,000 subtemples.
A powerful army of warrior monks occasionally engaged in power
struggles with other monasteries and political leaders. In 1571,
warlord Oda Nobunaga ended this Buddhist militancy by attacking
and razing the huge temple complex on Mt. Hiei. Currently, there
are 200 temple buildings and its forest environment has great
scenic charm. The temple itself is in an excellent state of preservation and the main buildings are National Treasures. Enryakuji
Temple was registered as a UNESCO World Cultural Heritage site
in 1994. It is located 10 minutes on foot from Enryakuji Station on
the Hieizan-Sakamoto Cablecar Line. It takes about 25 minutes to
get to JR Hieizan Sakamoto station from JR Otsu station.
Miidera (Onjoji) Temple
Located at the foot of Mt. Hiei, this temple was founded in 686 AD
by Emperor Tenmu in honor and memory of his brother. The name
“Miidera”, literally means “Temple of Three Wells”. The namederives from the springs at the temple which were used for theritual bathing of newborns.
The Evening Bell of Miidera is one of the well-known Omi Hakkei(Best Eight Views of Omi). Miidera is also famous for the color of
its autumn leaves and is an excellent place to enjoy beautiful
Japanese autumn scenery until early December.
Take the Keihan Bus from JR Otsu Station to Miidera bus-stop, or
take the Keihan Ishiyama Sakamoto Line to Miidera. The temple is
10 minutes on foot from Miidera station.
More information is available on
http://www.pref.shiga.lg.jp/multilingual/english/index.html
http://www.jnto.go.jp/eng/location/regional/shiga

16

Access to Conference Site
Kansai Int'l
Airport(KIX)

Limousine Bus¥ 2,550 / 100 min

Narita Int'l
Airport(NRT)

Tokyo Int'l
Airport(HND)

JR Limited Express NEX¥ 3,020 / 58 min
Keikyu¥ 410 / 19 min

Tokyo
Station
JR Limited
Express Haruka¥ 2,850 / 77 min

Shinagawa Station

JR Shinkansen
Nozomi¥ 13,080 / 138 min

JR Shinkansen
Nozomi¥ 13,080 / 130 min

Kyoto Station

JR Biwako Line ¥ 200 / 9 min

Otsu Station

10 min byFree Shuttle Bus

Nagisa Park LineBus ¥ 210 / 15 min

Otsu Prince Hotel(as of Nov. 2015)*Information of this page may be changed. Please confirm the details
in each company.
17

18

Shin-Osaka

5 min

⑤

Yamashina

Kosei-Line

Nishi-Otsu⑦⑥

Kyoto (JR)Attention: Please don't take Kosei-Line.

Any train bound for Nagahama, Maibara,
Yasu, Kusatsu, Tsuge or Ohgaki goesto Otsu.

Trains for Otsu (Biwako-Line)depart from platform 2 of
JR Kyoto Station.

Bus

①
Zeze

Seta River

Seta

Kusatsu

JR-Shinkansen

Biwako-Line

④

Otsu

②

5 min

③

(Otsu Prince Hotel)

Conference Site

Lake Biwa

Tokyo
Nagoya① Otsu Prince Hotel
Phone: +81-77-521-1111② BIWAKO HOTEL
Phone: +81-77-524-7111③ Hotel Blue Lake Ohtsu
Phone: +81-77-524-0200④ Hotel Tetora Otsu. Kyoto
Phone: +81-77-527-6711⑤ HOTEL HOKKE CLUB KYOTO
Phone: +81-75-361-1251⑥ HOTEL KEIHAN KYOTO
Phone: +81-75-661-0321⑦ Ibis Styles Kyoto Station
Phone: +81-75-693-8444

Access from Kyoto and Hotel Location

19

Kyoto

Kyoto

JR Biw

ako-L

1

ine

Kamisakae machi Sta.

③

Hama-Otsu Sta.

yresswa④
JR Otsu Sta.
1

500m

N

①

IDW ’15'06 Conference Site
(OtsuPRINCE
Prince Hotel)(OTSU
HOTEL)

Nishiki Sta.

Omi-Ohashi Bridge

Keihan Ishiyama Sakamoto Line
Keihan Zeze Sta.

JR Zeze Sta.

0

Nagisa Park Line Bus

Gichuji Temple

Nagisa (Lakeside) Park
Biwako Hall

(Hotel ①-④)

Otsu City

Biwako Bunkakan Hall

Ishiba Sta.

Shimanoseki Sta.

②

Tenson Jinja Shrine
Free Shuttle Bus Stopin ExpMeish

MiideraTempleTemple)
Onjoji(Miidera

Miidera Sta.

Otsu Station
Free ShuttleBus
Bsu Stop
Shiga Bank

Nagisa Park LineBus Terminal No. 2
for a route bus ¥210
North Exit
Exit)
(Biwako Gate)

JR Otsu Sta.

SID Display Week 2016
May 22 – 27, 2016
Moscone Convention Center
San Francisco, CA, USA

20

N

Wednesday

December 9

Plenary Sessions
Wednesday, December 99:30 - 9:50

Ohmi 1Plenary

Opening
Master of Ceremony: K. Ishii, Executive Chair, IDW
Opening Remarks
9:30
H. Okumura, General Chair, IDW
A. Ghosh, President, SID
M. Doi, President, ITE
M. Kimura, Program Chair, IDW
9:50 - 11:10

Ohmi 1

Keynote Addresses
Chair:
Co-Chair:

M. Kimura, Program Chair, IDW
H. Okumura, General Chair, IDW

Keynote Address - 1
Dynamic Aware Interiors - Rethinking
9:50
Interactive Displays
Y. Kitamura
Tohoku Univ., Japan
Imagine reactive interior spaces which are aware of our actions andtransform according to changing needs. Imagine furniture and wallsthat act as interactive displays and shapeshift to the correct physicalform, and the appropriate interactive visual content and modality. I will
present our recent efforts on realizing this vision.
Keynote Address - 2
10:30
J. ChuGlobal Business for Mobile Device

Huawei Device, China
As the leading smartphone innovator in China, we would like to share
the achievement of Huawei global business in mobile devices of years
2014 and 2015, and to foresee the future by market trends.

21

Wednesday

December 9

11:10 - 11:50

Ohmi 1

Invited Address
Chair:
Co-Chair:

M. Kimura, Program Chair, IDW
H. Okumura, General Chair, IDW

Invited Address - 1
11:10

Information Flow of Things: Sensing,
Networking, and Processing Technologies
for Real-time Utilization of IoT Data
K. Yasumoto
NAIST, Japan

Nowadays, a huge number of IoT devices including sensors, cameras,
and various kinds of machines continuously produce data streams. It is
expected to recognize the real world situation by analyzing thesestreams. For example, analysis of video streams captured by in-vehicle
cameras may enable automatic detection and real-time sharing of
scenic spots in wide geographical area. However, the real-time data
analysis/processing will require a lot of computation and network
resources depending on type and/or amount of data streams. This talkaddresses existing technologies for handling IoT data streams in realtime and reveals technical challenges that must be solved in the future.
----- Lunch ----17:20 - 18:20

Ohmi 1

Special Address
Chair:
Co-Chair:

M. Kimura, Program Chair, IDW
Y. Nakanishi, Shizuoka Univ., Japan

Special Address - 1 Lighting the Earth by LEDs
17:20
H. Amano
Nagoya Univ., JapanThe success of blue/white LEDs has motivated the nitride researchers
to attempt to realize longer-wavelength LEDs. Improvement of thecrystalline quality of high-In-content InGaN is essential for the
fabrication of high-performance yellow-to-red LEDs and LDs. We will
review the growth of high-In-content InGaN by MOVPE and the present
status of long-wavelength LEDs.

22

Thursday

December 10

Special Topics of Interest on
Oxide-Semiconductor TFT
Thursday, December 10
13:40 - 15:40

Ohmi 6

Poster AMDp1: Oxide TFT
AMDp1 - 1

Stress Durability of CAAC-IGZO TFTs

Oxide TFT

R. Honda*, H. Baba*, A. Suzuki*, M. Hayakawa**,
N. Ishihara*, H. Kanemura**, Y. Shima**, S. Saito**,S. Matsuda*, K. Dairiki*, J. Koezuka**, S. Yamazaki*,***Semiconductor Energy Lab., Japan**Advanced Film Device, Japan

C-axis-aligned ab-plane-anchored crystalline In-Ga-Zn oxide (CAACIGZO) is a semiconductor material that has attracted attention in recent
years. In this study, drain current stress tests for CAAC-IGZO TFTs
were performed, and the TFTs under the stress were observed using
emission microscopes to indicate hot-carrier effects.
AMDp1 - 2

Correlation Among Crystal Morphology, Surface
Shape, and Oxygen Vacancy Formations in In-Ga-Zn
Oxide
M. Nakashima, T. Hiramatsu, E. Kikuchi, Y. Yamada,
M. Oota, K. Dairiki, S. Yamazaki
Semiconductor Energy Lab., JapanThe crystal orientations and surface shapes of In-Ga-Zn oxide (IGZO)
thin ﬁlms were examined by cross-sectional TEM. Furthermore, thecorrelation between crystallinity and oxygen vacancy was investigatedby ﬁrst-principles calculations. The results reveal that oxygen vacancies
are less likely to be formed in crystalline than in amorphous IGZO.
AMDp1 - 3

Behavior of a-IGZTO TFTs with BCE Structures
Containing Floating Metal Electrodes
M. Ochi, S. Morita, H. Goto, T. Kugimiya, M. Kanamaru*,
M. N. Fujii**, Y. Uraoka**
Kobe Steel, Japan*Kobelco Res. Inst., Japan**NAIST, Japan

We report fabrication of back channel etch type oxide semiconductor
TFTs equipped with ﬂoating metal electrodes on their channel region.
The on-current was greatly enhanced by arranging of the additional
electrodes. It is found that formation of parasitic TFTs also had a similareffect.

23

Thursday

December 10

AMDp1 - 4

Suppression of Photo-Bias Instability of Transparent
Amorphous Indium Oxide Thin Film Transistors byin situ Nitrogen Doping
C.-H. Chang, C.-C. Chang, P.-T. Liu, Y.-C. Tsai*Nat. Chiao Tung Univ., Taiwan*Appl. Materials, Taiwan

In this study, we analyzed the In2O3 thin ﬁlms with different nitrogenﬂow rate during sputtering as the transistorʼs channel layer. The
electrical analysis including deviceʼs reliability and material analysis
were both examined.
AMDp1 - 5

Related a-IGZO Oxide Structure Analysis for
Reliability Improvement
W.-T. Chen, K.-J. Chang, W.-P. Chen, C.-C. Nien,
K.-K. Chen, H.-H. Lu, Y.-H. Lin
AU Optronics, Taiwan

Different device structures stress were studied in this study. Top gate
TFT device showed good PBS/NBS results due to top gate metalshielding and thinner SiOx to avoid gas/moisture permeation into the
IGZO. The dual gate TFT device showed better PBIS/NBIS due to its
nice electric ﬁeld distribution.
AMDp1 - 6

Simple Current-Biased Voltage-Programmed a-IGZO
Pixel Circuit for High-Resolution AMOLED Displays
F.-H. Chen, Y.-T. Liu, C.-M. Lu, C.-L. Lin
Nat. Cheng Kung Univ., Taiwan

A current-biased voltage-programmed amorphous indium-gallium-zincoxide pixel circuit which consists of three transistors and one capacitor
is proposed for the use in high-resolution active-matrix organic lightemitting diode (AMOLED) displays. The simulation results conﬁrm that
the OLED current has immunity to the degradation of driving TFT,
OLED, and carrier mobility.
AMDp1 - 7

Development of High Performance AM-OLED
Display Using IGZO TFT
X.-W. Lv, Y.-H. Meng, C.-Y. Su, W.-H. Li, L.-Q. Shi,
H.-J. Zhang, W. Shi, S.-M. Ge, T. Sun, C.-Y. Lee, A. Lien*
Shenzhen China Star Optoelect. Tech., China*TCL Corporate Res., China

An optimized process of manufacturing IGZO TFT was developed.
According to adjusting pattern sequence of GI, IGZO and ES, transfer
characteristics and uniformity of TFTs were improved. Moreover, muraof panel is reduced greatly. Finally, a high performance 31-in. 4K2K
AM-OLED display was fabricated.

24

Thursday
AMDp1 - 8

December 10
Investigation of Stacking Multi-Layers Oxide Thin
Film Transistors Fabricated by Sol-Gel Process
C. Y. Huang, C. E. Tsay, Y. W. WangNat. Changhua Univ. of Education, Taiwan

The effects of multi-stack oxide semiconductor layers on TFT. ZnO
based semiconductors are processed sequentially as active multi-layer
through sol-gel process. Tin/zinc oxide is as the donor provider andgallium/zinc oxide is as the resist layer. The result highest mobility
reaches 6.4 cm2/Vs and on/off current ratio over 105.
AMDp1 - 9

J. Liu, J. Li, S. Qin, J. Lee, C. Lee
Shenzhen China Star Optoelect. Tech., China
We studied the inﬂuence of nitrogen plasma treatment on the indium
gallium zinc oxide thin ﬁlm transistor. Then we improved theperformance of indium gallium zinc oxide through adding nitrogen into
the deposition of silicon oxide insulator. Finally, we fabricated highreliable oxide thin ﬁlm transistor under negative bias illumination stress.
AMDp1 - 10 Characteristics Improvements by Adopting MultiActive Layer Structure in a-IGZO Thin Film
Transistors
D. Xu, X. Duan, M. K. Baek, Y. Youn, C. Che, S. Lee
Hefei BOE Optoelect. Tech., China
This paper demonstrates a characteristics improvement method using
multi-active layer structure in a-IGZO TFTs. The multi-active layer
comprises bottom oxygen-rich (OR), middle oxygen-deﬁcient (OD), and
top OR a-IGZO layers, forming carrier-conﬁnement structure. By using
above-mentioned multi-layered IGZO active layer, TFT devices
exhibited relatively better and more stable characteristics was gained.
AMDp1 - 11 Electrical Properties of a-IGZO TFT with Various
Annealing Temperature
Y.-H. Hsieh, M.-C. Chen, S.-Y. Chu
Nat. Cheng Kung Univ., Taiwan
In this paper, we use rf magnetron sputtering method to fabricate
InGaZnO thin-ﬁlm transistors. We use surface energy to identify the
relationship between InGaZnO thin-ﬁlm transistors with various
annealing temperature. We also examine the InGaZnO TFT devices
characteristic and hysteresis.

25

Oxide TFT

High Reliable Indium Gallium Zinc Oxide Thin Film
Transistor under Negative Bias Illumination StressThursday

December 10

AMDp1 - 12 Comparison of Electrical Performance for a-IGZO
Based Single Gate and Dual Gate Driving TFT Using
TCAD
M. M. Billah, M. D. H. Chowdhury, J. Jang
Kyung Hee Univ., Korea
We compared electrical performances between single(SG) anddual(DG) driving a-IGZO TFTs using TCAD. DG-driving shows higher
electric-ﬁeld 2.59 (2.53) MV/cm and electron concentration 1.04 1019
(1 1019) cm-3 at back (front) channel and thus bulk-accumulation TFT
is possible. Using I-V & C-V measurements DG-driving shows higher
carrier-concentration and lower EC-EF, leads to increase the draincurrent and mobility.
AMDp1 - 13 Withdrawn
AMDp1 - 14 Withdrawn
AMDp1 - 15 Investigation on Ambient Degradation of
Amorphous InGaZnO Thin Film Transistors in an
Unsealed Chamber
J. Xu, Q. Wu, L. Xu, H. Xie, S. Li*, C.-Y. Lee*, A. Lien**,C. DongShanghai Jiao Tong Univ., China*Shenzhen China Star Optoelect. Tech., China**TCL Corporate Res., China

The device transfer characteristics of the unpassivated amorphous
InGaZnO thin ﬁlm Transistors were separately measured underambient N2, Ar, O2, and moisture in an unsealed chamber, proving thatmoisture instead of oxygen, nitrogen, and inert gases was dominant in
the ambient degradation effects under atmospheric conditions.
AMDp1 - 16L Reliability Improvement of Amorphous InGaZnO
Thin-Film Transistors by Less Hydroxyl-Groups
Siloxane Passivation
C. Kulchaisit, Y. Ishikawa, M. N. Fujii, H. Yamazaki,
J. P. S. Bermundo, S. Ishikawa*, T. Miyasako*, H. Katsui*,
K. Tanaka*, K. Hamada*, Y. Uraoka
NAIST, Japan*JSR, Japan
We control the hydroxide content in amorphous InGaZnO surface bypassivation to improve the thin-ﬁlm transistorʼs (TFT) reliability. We
achieved the stable device using an organic-inorganic hybrid material
by controlling the OH bond, and found that the OH amount in thepassivation is a key issue in oxide TFT reliability.

26

Thursday

December 10

AMDp1 - 17L The Impact of Thermal-Assist UV/Ozone Treatment
in Amorphous Zinc Oxynitride Thin Film Transistors
K.-C. Ok, H.-J. Jeong, H.-M. Lee, J.-S. Park
Hanyang Univ., Korea
We fabricated high mobility (Msat > 40 cm2/Vs) and stable (ΔVth < 1 V@PBS and NBS for 1hr) amorphous zinc oxynitride thin ﬁlm transistors(a-ZnON TFTs) using thermal assist UV/ozone treatment. The electricalcharacteristics of a-ZnON TFTs were investigated by chemical bonding
properties.

Oxide TFT

AMDp1 - 18L Inﬂuence of Copper Source/Drain Metal on BCE
Amorphous IGZO TFTs
C.-Y. Hou, L.-Y. Chiu, J.-J. Zeng, S.-F. Wu, S.-C. Lee,
W.-C. TsaiAU Optronics, Taiwan
BCE_structure IGZO TFT using copper as the source/drain metal, we
have developed a copper-blocked process to prevent Cu from diffusing
into the IGZO active layer. The device characteristics and reliability of
Cu BCE_structure IGZO TFT can be improved by copper-blocked
process.
AMDp1 - 19L Improvement of High Mobility Al-Doped InSnZnOBack Channel Etch Thin Film Transistor with
Double-Layered Passivation of SiO2/Al2O3
G.-J. Jeon, K.-H. Lee, H. Yeom, Y. Nam, G. B. Mun,
I.-S. Kang*, S.-H. K. Park
KAIST, Korea*Nat. Nano-Fab Ctr., Korea
N2O plasma treatment was performed to back channel of Al-doped
InSnZnO. TFTs were passivated with SiO2 or SiO2/Al2O3. Whilesubthreshold swing and hysteresis of TFTs with SiO2 single layer weredegraded after post-annealing, TFTs with SiO2/Al2O3 showed muchbetter performance with 0.09 V/decade and 30.55 cm2/Vs.
AMDp1 - 20L Reliability and Performance Study of ZnO CoSputtered InGaZnO Thin Film Transistors Under
Various Ambient Conditions
N. Tiwari, R. N. Chauhan, P.-T. Liu, H.-P. D. ShiehNat. Chiao Tung Univ., Taiwan
ZnO co-sputtered IGZO TFTs were fabricated and systematicallyinvestigated the impact of various annealing environments on theirperformance characteristics. The characteristics were improved in N2
ambient-displaying ﬁeld effect mobility ~ 16.10 cm2/Vs, thresholdvoltage ~ 1.5 V, sub-threshold swing ~ 0.21 V/decade and NBIS shifting~ –2.75 V.

27

Thursday

December 10

AMDp1 - 21L InZnO Capped with InZnO:Si Bi-Stack Layers forEnhanced Photo-Bias Stability and Performance inMetal Oxide Thin Film Transistors
R. N. Chauhan, N. Tiwari, Y.-H. Tai, P.-T. Liu,
H.-P. D. ShiehNat. Chiao Tung Univ., Taiwan
A thin ﬁlm transistor with bi-stack layers of silicon incorporated
InZnO(IZO:Si) on InZnO layer is proposed to enhance device
performance and negative photo-biased stability. The resulting device
realizes as enhancement mode (Vth ~ 1.30 V) with mobility of 15.3 cm2/
Vs, sub-threshold swing of 0.20 V/decade, better stability ~ –0.75 V.
AMDp1 - 22L Oxide TFT Shift Register Circuit with DC-type
Output Driver
S.-J. Song, H. Nam
Kyung Hee Univ., Korea
This paper demonstrates a DC-type oxide TFT shift register thatconnects large size pull-up TFTs to positive supply instead ofalternating clock signals to reduce the power consumption of clock
drivers. The power consumption is simulated as 0.237 mW at a
16-stage gate driver for a 120 Hz full-HD display.
AMDp1 - 23L High Performance Solution Oxide TFTs for AMOLED
Applications
L. Y. Lin, C. C. Cheng, C. Y. Liu, M. F. Chiang, P. H. Wu,
M. T. Lee, C. K. Lo, L. F. Lin, S. H. Kuo
AU Optronics, Taiwan
Solution-processed metal oxide TFT arrays have been fabricated for
AMOLED application in this work. Two different kinds of TFT
conﬁgurations have been introduced; the highest mobility is 4.24 cm2/
Vs for coplanar and 11.37 cm2/Vs for island stop TFT structure.
Characteristics and reliability of solution-processed metal oxide TFTs
have been also presented in this work.
AMDp1 - 24L Comparison of Performance and Stability ofTungsten-doped Indium Oxide Thin Film Transistor
with SiO, SiN and SiO/SiN as Gate Insulators
P.-W. Chen, C.-H. Chang, P.-T. Liu
Nat. Chiao Tung Univ., Taiwan
In this study, we investigated the performance and stability of thin-ﬁlm
transistors with tungsten-doped indium oxide as channel layer, whichwere deposited on SiO, SiN and SiO/SiN. Positive/Negative bias stresswere performed to explore the electrical reliability of IWO TFT withdifferent gate insulators.

28

Thursday

December 10

AMDp1 - 25L High-Mobility and High-Stability ZnON Thin-Film
Transistors for Next-Generation Display
Applications
Y. S. Kim, J. H. Kim, H. S. Kim
Chungnam Nat. Univ., Korea
In order to improve the performances of Zinc Oxynitride thin-ﬁlm
transistors, heat treatment conditions of ZnON semiconductors werestudied here. Thin ﬁlm properties and the resulting TFT performances
including the device stability were evaluated. High-stability ZnON
devices with ultra-high ﬁeld-effect mobility (MFE) values exceeding 50
cm2/Vs were achieved.

13:40 - 15:40

Ohmi 6

Poster FLXp2: Flexible Electronics 2
FLXp2 - 1

The Instability Change of Flexible a-IGZO TFTs
under Different Mechanical Stress
H.-J. Jeong, K.-C. Ok, H.-M. Lee, J.-S. Park
Hanyang Univ., Korea

Amorphous InGaZnO (IGZO) thin ﬁlm transistors (TFTs) were made on
the polyimide (PI) substrate. We evaluated transistor performance andinstability depends on mechanical stress, various bending radius (10mm, 5 mm and 2 mm) were applied to ﬂexible substrate. The variationin the threshold voltage under NBTS was –0.58 V (without bending)/–6.48 V (2 mm).
FLXp2 - 2L

Highly Robust Flexible Oxide TFTs Achieved by
Plastic Substrate with Embedded CNT/GO
Backbone
Y.-H. Kim, J. G. Um, M. Mativenga, J. Jang
Kyung Hee Univ., Korea

We demonstrate the highly robust ﬂexible oxide TFT fabricated on 5
Mm-thick PI. Particularly, by process employed of embedding thegraphene oxide and carbon nanotubes mixture into the PI substrate, it
makes excellent functionality as ﬂexible substrate that self-standing
without any supporting materials and prevent from the electrostatic
discharge effect.

29

Oxide TFT

AMDp1 - 26L Withdrawn

Thursday

December 10

FLXp2 - 3L

Thermal Analysis of Oxide Thin Film Transistor with
Fluorinated Silicon Nitride Gate Insulator
H. Yamazaki, Y. Ishikawa, M. N. Fujii, J. P. S. Bermundo,
E. Takahashi*, Y. Andoh*, Y. Uraoka
NAIST, Japan*Nissin Elec., Japan

We found that amorphous In-Ga-Zn-O thin-ﬁlm transistors with W=5
Mm showed higher mobility than TFTs with W=90 Mm, and showed asharp mobility curve. The results of thermal analysis show local heating
at the edge of the drain. We conclude that these effects are caused bymobile minus ions.
----- Break ----16:00 - 17:25

Ohmi 1AMD1: Oxide TFT: Crystalline Oxide
Chair:
Co-Chair:

H. Kumomi, Tokyo Inst. of Tech., Japan
M. Hiramatsu, Japan Display, Japan

AMD1 - 1:
16:00

Invited CAAC-Oxide Semiconductor Material and Its
Applications
M. Tsubuku, S. Yamazaki
Semiconductor Energy Lab., Japan

C-axis-aligned a-b-plane-anchored crystal indium- gallium-zinc-oxide(CAAC-IGZO) has unique characteristics with a layered crystal
structure. We found that the IGZO with new atomic ratios of In:Ga:Zn =4:2:3 to 4:2:4.1 and its neighborhood also has the layered CAAC
structure and the electrical characteristics is improved in mobility andreliability.
AMD1 - 2:
16:25

Invited Change in Structure and TFT Performancesof IZO, IGO and IGZO Films by Crystallization
A. Suko, J. Jia, S. Nakamura, Y. Shigesato
Aoyama Gakuin Univ., Japan

How the a-IGZO ﬁlms crystallize and how the crystallinity affects theelectrical properties, hence the TFT performances, have been
investigated in detail. HREM analyses revealed the crystallization
behavior in detail. For the comparative purpose the crystallization
behaviors of a-IGO and a-IZO ﬁlms are also investigated.

30

Thursday
AMD1 - 3
16:50

December 10
Improvement in Characteristics, Reliability and
Dispersion of CAAC-IGZO FETs with Surrounded
Channel Structure
M. Hayakawa*, S. Matsuda**, S. Saito*, Y. Shima*,
D. Matsubayashi**, M. Dobashi*, K. Tsutsui**, R. Honda**,J. Koezuka*, K. Okazaki*, S. Yamazaki*,***Advanced Film Device, Japan**Semiconductor Energy Lab., Japan

AMD1 - 4L
17:10

Double-Channel InZnO/AlSnZnInO Thin-Film
Transistors with Ultra High Mobility
J. H. Choi, J.-H. Yang, S. Nam, H.-O. Kim, O-S. Kwon,
E.-S. Park, C.-S. Hwang, S. H. Cho
ETRI, Korea

We report high performance double-channel InZnO/AlSnZnInO (IZO/ATZIO) thin-ﬁlm transistors (TFTs) with inverted staggered backchannel etch (BCE) structure. The ﬁeld-effect mobility (MFE),
Subthreshold slope (SS), turn-on voltage (Von), and on/off ratio were51.2 cm2/Vs, 0.15 V/decade, –1.6 V, and 3 109, respectively.
----- Break -----“Innovative Demonstration Session”
by Oral and Poster Presenters
Live demonstrations of emerging information
display technologies
Thursday, Dec. 10, 2015
10:30 – 16：00
Ohmi 5 (2F)
Shakunage 2 (1F)
See page 205-209 for details
31

Oxide TFT

Crystalline In-Ga-Zn-O (IGZO) ﬁeld-effect transistors (FETs) with theirchannels electrically surrounded by two gate electrodes on the top sideand the bottom side (we refer to such a structure as “surroundedchannel (S-ch) structure”) were fabricated. Characteristics, reliability
and dispersion of crystalline IGZO FETs were improved due to theirS-ch structure.

Thursday

December 10

17:40 - 19:10

Ohmi 1AMD2: High Resolution Displays Using LTPS and Oxide TFTs
Chair:
Co-Chair:P. Heremans, imec, Belgium
H. Hamada, Kinki Univ., Japan

AMD2 - 1:
17:40

Invited 2K4K 550-ppi In-Cell Touch LTPS TFT-LCD
M. Tada, T. Nakamura, H. Kimura
Japan Display, Japan

2K4K 550-ppi in-cell touch LTPS TFT-LCD has been developed inwhich low power consumption is realized using RGBW pixel, local
dimming and low frame-rate driving. This LCD can be driven in 30 Hz
frame-rate by the advanced TFT process with narrower channel width
and thinner insulator storage capacitance.
AMD2 - 2

Withdrawn

AMD2 - 5L
18:05

Scalability Characteristics of Self-Aligned Top-Gate
IGZO TFTs
J. S. Seo, J. Noh, P. S. Yun, J. U. Bae, K.-S. Park,I. B. Kang
LG Display, Korea

To achieve the short-channel scalability characteristics of self-aligned
IGZO TFTs we perform to control the diffusion region (ΔL, LDD) inside
channel and to reduce the total resistivity of S/D extension region. As aresult of this work, we realize the below L<4 Mm TFTs and improve its
current driving ability.
AMD2 - 3
18:25

Development of 32-in. 8K4K LCD with Oxide
Semiconductor and GOA Technology
M. Wang, Y. Zhao, Q.-M. Gan, F. Zhao, C.-K. Zhang,
L.-Q. Shi, L.-M. Zeng, C. Dai, T. Lee, H-L. Hu, J. Wu,
C.-Y. Chiu, C.-Y. Lee, A. Lien*
Shenzhen China Star Optoelect. Tech., China*TCL Corporate Res., China

We have successfully developed a 32-in. 8K4K LCD prototype which
has the highest pixel density (280PPI) in TV market. BCE type oxide
semiconductor and photo- alignment FFS mode are used to gain
enough aperture ratio. HSD method and GOA technology are also
used to decrease COF quantity.

32

Thu. / Fri.
AMD2 - 4:
18:45

December 10 / 11
Invited Over 800-ppi Liquid Crystal Display withHigh Aperture Ratio Using IGZO Platform
S. Uchida, N. Ueda, K. Okada, A. Oda, K. Yamamoto,K. Yamamoto, N. Noguchi, T. Matsuo
Sharp, Japan

Using oxide semiconductor, we have developed a 806ppi (4K2K) LCD
which pixel density reach 4K resolution smart-phone and HeadMounted-Display(HMD). An excellent aperture ratio was achieved withpatterning dimensions by a gh-line lithography manufacturing
backplane. With i-line lithography, this technology can realize larger
pixel density than 1000ppi which satisfy HMD demands.

Oxide TFT

Author Interviews and Demonstrations
19:00 – 19:40, Ohmi 6

Friday, December 11
9:00 - 10:30

Ohmi 1AMD3: Oxide TFT: Reliability
Chair:
Co-Chair:Y. Yamamoto, Japan
K. Takatori, NLT Techs., Japan

AMD3 - 1:
9:00

Invited Reliability of Oxide TFTs
B. S. Bae, S. M. Shin, K. M. Yu, E.-J. Yun
Hoseo Univ., Korea

The negative shift of threshold voltage by light illumination wasinvestigated for the oxide thin ﬁlm transistor. By the light illumination,
both the doubly ionized oxygen vacancy and charge trapping cause thenegative shift of the threshold voltage.
AMD3 - 2:
9:25

Invited Highly Reliable Oxide Thin Film Transistors
for Flexible Devices
Y. Uraoka, J. P. S. Bermundo, M. Fujii, Y. Ishikawa
NAIST, Japan

Oxide TFT were investigated for ﬂexible display. Fluorinated SiN gateinsulator greatly improved reliability of oxide TFT under bias stress.
Excimer laser annealing was performed for the TFT with siloxane
passivation for low temperature annealing. Amorphous InZnO was
fabricated by spin-coating method and Ag paste was patterned byscreen print.

33

Friday
AMD3 - 3
9:50

December 11
Electrical Characteristics and Stability of Bottom
Gate a-InGaZnO TFTs on Flexible Substrate
H.-W. Li, C.-F. Yang, C.-P. Chang, C.-H. Tsai, H.-H. Lu
AU Optronics, Taiwan

The bottom gate a-IGZO TFTs with different buffer layers fabricated on
PI substrate was investigated. The devices characteristics would not beaffected by buffer layers, while applying the plasma treatment on PI
substrate. Devices show a good performance, and the thresholdvoltage shift is less than 1 V under bias stress.
AMD3 - 4
10:10

Novel BTS Model and Methodology for AC-StressInduced Long-Term Reliability in Thin-Film
Transistors
J. Jang, K. Jeon, J. Yang, J. Park, M. Seo, Y. Yoon,
K. Kim, K. Jung, Y. Kim, M. Yoo
Samsung Display, Korea

A novel BTS(Bias-Temperature-Stress) model and methodology forpredicting threshold voltage shifts(ΔVTH) under AC stress is ﬁrstly
proposed. In order to verify this model, TFTs of the amorphous silicongate driver integrated in a LCD panel were measured, and the
proposed model has ΔVTH error rate of 11.7% on average.
----- Break ----10:40 - 11:55

Ohmi 1

AMD4: TFT Fabrication Technologies
Chair:
Co-Chair:H. Minemawari, AIST, JapanY. Fujisaki, NHK, Japan

AMD4 - 1:
10:40

Invited Organic Blend Semiconductors for High
Performance Thin-Film Transistor Applications
T. D. Anthopoulos, J. Smith, S. Hunter
Imperial College London, UK

We report the development of p-channel organic small-molecule/polymer blend-based thin-ﬁlm transistors with high hole mobility.
Emphasis is placed on the use of molecular p-dopants as a mean to
improve the transistorsʼ operating characteristics as well as theoperating frequency of integrated circuits such as multi-stage ringoscillators.

34

Friday
AMD4 - 2
11:05

December 11
Development of All Solution Processed TFT in ESL
Conﬁguration
M. Marinkovic, S. Bom*, T. Balster*, K. Su, A. Merkulov,
V. Wagner*, R. Anselmann
Evonik Inds., Germany*Jacobs Univ. Bremen, Germany

AMD4 - 3L
11:25

KrF Excimer Laser Annealing of a-InGaZnO ThinFilm Transistors with Solution Processed Hybrid
Passivation Layers
J. P. S. Bermundo, Y. Ishikawa, M. N. Fujii, T. Nonaka*,
H. Ikenoue**, Y. Uraoka
NAIST, Japan*Merck, Japan**Kyushu Univ., Japan

We show how KrF excimer laser annealing (ELA) can be used as a lowtemperature annealing process to improve the properties of passivatedamorphous InGaZnO thin-ﬁlm transistors. We analyzed the effect of
KrF ELA on the electrical properties, physical structure, chemicalbonding and composition of a-InGaZnO.
AMD4 - 4L
11:40

High Performance and Uniformity of Poly-Si ThinFilm Transistors using Solid-Phase Crystallization
on YSZ Layers by Two-step PLA Method
L. T. K. Mai, S. Horita
JAIST, Japan

Poly-Si TFTs were fabricated by two-step PLA method on two kinds ofsubstrates, glass and YSZ/glass. TFTs on YSZ/glass show much better
performance and uniformity of device-to-device, e.g., average mobility~80 cm2/Vs and its standard deviation ~18 cm2/Vs, respectively,
compared with ~40 cm2/Vs and ~28 cm2/Vs on glass, respectively.
Author Interviews and Demonstrations
12:00 – 12:40, Ohmi 6----- Lunch -----

35

Oxide TFT

Liquid-phase processed metal oxide and directly patternable etch-stop
materials were successfully integrated in TFTs with ESL conﬁguration.
Fabricated devices exhibit the mobility of 14 cm²/Vs, the negligible
contact resistance and good electrical stability. The up-scaling
feasibility of process to large substrates and integration in high-end
display devices will be presented.

Friday

December 11

13:30 - 15:00

Ohmi 1

AMD5: Oxide TFT: Applications
Chair:
Co-Chair:Y. Uraoka, NAIST, Japan
M. Inoue, Huawei Techs, Japan

AMD5 - 1:
13:30

Invited Properties of Oxide-Semiconductor TFTs
under Mechanical Strain for Flexible Electronics
P. Heremans*,***, A. de Jamblinne de Meux*,***,
B. Hou**, A. Tripathi***imec, Belgium**Holst Ctr., the Netherlands***Univ. of Leuven, Belgium

We report on the mechanical properties of a-IGZO transistors. We ﬁndthat the charge carrier mobility of a-IGZO transistors is remarkably
independent of strain. We explain these experimental results by abinitio modeling of amorphous IGZO semiconductor material. We
compare a-IGZO to covalent semiconductors, a-Si and LTPS, and toorganic transistors.
AMD5 - 2:
13:55

Invited Novel Technologies for Source and Drain
Resistance Reduction in Short-Channel SelfAligned InGaZnO Thin-Film Transistors
K. Sakuma, K. Ota, T. Irisawa, C. Tanaka, K. Ikeda,
D. Matsushita, M. Saitoh
Toshiba, Japan

We have successfully demonstrated a low-resistance source and drain(S/D) region of InGaZnO-TFT using Ar ion implantation (Ar I/I) and selfaligned metallization processes. These silicon-compatible technologies
are very promising for high performance and high density InGaZnO
TFT as BEOL Tr. in 3D LSIs.
AMD5 - 3
14:20

Advanced Compensation Technologies for LargeSize UHD OLED TVs
S. Takasugi, H.-J. Shin, M.-K. Chang, S.-M. Ko,
H.-J. Park, J.-P. Lee, H.-S. Kim, C.-H. Oh
LG Display, Korea

In this paper, we present novel OLED display panel compensation
technologies for large-size UHD OLED TVs considering variations ofthreshold voltage, mobility, channel size, OLED efﬁciency, and OLED
uniformity. Using these technologies, we have successfully launched
55-, 65- and 77-in. UHD OLED TVs.

36

Friday
AMD5 - 4
14:40

December 11
Dual-Gate Self-Aligned a-IGZO TFTs Using 5-Mask
Steps
M. Nag*,**, F. De Roose*,**, A. Bhoolokam*,**, K. Myny*,
A. Kumar***, S. Steudel*, J. Genoe*,**, W. Dehaene**,G. Groeseneken*,**, P. Heremans*,**,****imec, Belgium**Katholieke Univ. Leuven, Belgium***Holst Ctr., the Netherlands----- Break ----15:10 - 16:35

Ohmi 1

AMD6: Oxide TFT: Solution Processes
Special Topics of Interest on Oxide-Semiconductor TFT
Chair:
Co-Chair:T. D. Anthopoulos, Imperial College London, UK
H. Kumomi, Tokyo Inst. of Tech., Japan

AMD6 - 1:
15:10

Invited Oxide-Channel Ferroelectric-Gate Thin Film
Transistors Prepared by Solution Process
E. Tokumitsu, T. Shimoda
JAIST, Japan

Features of oxide-channel ferroelectric-gate thin ﬁlm transistors (FGTs)
are presented at ﬁrst. Next, some recent topics, solution process andnew printing process for TFT fabrications are presented. In particular,
we demonstrate sub-micron channel FGTs fabricated by solution
process with newly developed nano-rheology printing (n-RP) without
using conventional lithography.
AMD6 - 2:
15:35

Invited Stable Metal Semiconductor Field EffectTransistors on Oxide Semiconductor Channels
Grown via Mist-CVD
G. T. Dang, T. Kawaharamura*, M. Furuta*, S. Saxena,
M. W. Allen
Univ. of Canterbury, New Zealand*Kochi Univ. of Tech., JapanWe demonstrate the successful production of transparent metalsemiconductor ﬁeld-effect-transistors (MESFETs), using reactivelysputtered silver oxide Schottky gates on In-Ga-Zn-O, Zn-Sn-O, SnO2,
and Ga2O3 channels, grown by non-vacuum, solution-processed Mist
Chemical Vapor Deposition (Mist-CVD). We examine the performanceand stability of these devices and discuss their suitability for display
applications.

37

Oxide TFT

We report a dual-gate (DG) self-aligned (SA) a-IGZO TFT process thatcomprises only ﬁve mask steps. The top-gate (TG) is SA which enableshigh speed operation. The secondary bottom-gate (BG) enables toimprove parameters such as on-current (ION) and the sub-thresholdslope (SS-1) substantially when both gates are connected together.

Friday
AMD6 - 3
16:00

December 11
Highly Reliable All-Printed Oxide TFT of High
Work-Function Metal Electrodes with Low Contact
Resistance by Doped Oxide Semiconductor
Y. Hirano, S. Matsumoto, R. Saotome, Y. Sone, S. Arae,
M. Kusayanagi, Y. Nakamura, N. Ueda, K. Yamada
Ricoh, Japan

We have developed all-printed TFT with high work-function metalelectrodes and novel oxide semiconductor in which carriers are
generated by doping technique to make good contact with theelectrodes. The TFT after forming planarization layer exhibited highmobility around 10 cm2/Vs and high reliability against bias-temperaturestress and illumination tests.
AMD6 - 4L
16:20

Self-Aligned Top-Gate InGaZnO Thin-Film Transistor
Fabricated at 150°C Using Coatable Organic
Insulator
T. Toda, Y. Magari, M. Furuta
Kochi Univ. of Tech., Japan

We fabricated self-aligned, top-gate InGaZnO thin-ﬁlm transistors(IGZO TFTs) with a coatable organic insulator, Zeocoat, at a maximum
process temperature of 150 C. The IGZO TFT with a channel protection
layer showed good switching properties; saturation mobility: 10.7 cm2/
Vs, subthreshold swing: 0.19 V/dec., and hysteresis: 0.2 V.
----- Break -----

Author Interviews and Demonstrations
18:10 – 18:50, Ohmi 6

Special Address
Lighting the Earth by LEDs
Hiroshi Amano
2014 Nobel Laureate
Nagoya Univ., Japan
17:20 – 18:20 Wednesday, Dec. 9
Ohmi 1 (2F)38

Wednesday

December 9

Special Topics of Interest on
Augmented Reality and Virtual Reality
Wednesday, December 9
13:30 - 15:10

Ohmi 10

DES1: Various Visualization Technologies
Chair:
Co-Chair:Y. Oyamada, Tottori Univ., Japan
T. Mitasaki, NTT, Japan

DES1 - 1:
13:30

Invited Near-Eye Display of Light Fields
W. Wu, I. Tosic, N. Bedard, P. Llull, K. Berkner, N. Balram
Ricoh Innovations, USA

DES1 - 2:
13:55

Invited Perceptual Illusions for Multisensory
Displays
T. AmemiyaNTT, Japan

Human perceptual properties have been applied for designing
multisensory display technologies. This paper overviews the sensoryillusion-based approach we have used to create a force display thatelicits illusory continuous force sensation by presenting asymmetricvibrations and a self-motion display based on a cross-modal effectbetween visual and tactile motion.
DES1 - 3:
14:20

Invited Duality in Computational Photography and
Display
S. Hiura
Hiroshima City Univ., Japan

Computational Photography is a new concept of imaging to offer
attractive functions such as blur reduction or posterior focus adjustment
by assuming the optical devices as an encoder of the light to images. In
this presentation, I will introduce several basic concepts andachievements in this ﬁeld.

39

AR & VR

We address processing of light ﬁeld data captured using a plenoptic
camera for the purpose of display on a personal near-eye display. Our
technique optimizes the focal plane conﬁguration of a multi-focal
display for the captured data and produces signiﬁcantly better visualquality than the uniform focal plane conﬁguration.

Wed. / Thu.
DES1 - 4:
14:45

December 9 / 10
Invited Augmented Reality Visualization Fusion
Y. Oyamada
Tottori Univ., Japan

In this presentation, we introduce a new interaction in Augmented
Reality applications. The interaction is tooverlap/overlay multiple markers that mimics physical action such as
mixing and merging several objects.
----- Break -----

Author Interviews and Demonstrations
16:30 – 17:10, Ohmi 6

Thursday, December 10
9:00 - 10:45

Ohmi 8

INP3: AR and Interactive Systems
Chair:
Co-Chair:M. Sato, MIT Media Lab, USA
N. Hashimoto, Citizen Holdings, Japan

INP3 - 1:
9:00

Invited Development of a TV System Augmented
Outside the TV Screen
H. Kawakita*,**, M. Uehara*, T. Nakagawa*, M. Sato***NHK, Japan**Tokyo Inst. of Tech., Japan

We advocated “Augmented TV” that gives an appearance ofconnecting the onscreen world, captured by the TV camera, to the realworld in front of the TV screen. To realize the goal, we have developed
AR system for TV video images, which is characterized by smoothnessof the connecting representation.
Also presented in Innovative Demonstration Session (see p. 208)
INP3 - 2:
9:25

Invited Disappearing Touchscreens: Making theWorld Interactive without Instrumenting It
M. Sato*,***MIT Media Lab, USA**Univ. of Tokyo, Japan

Interaction with physical objects and information in the real world is
becoming increasingly important. However, conventional methods
require adding physically complex touch sensors or tags. In this paper,
we discuss several approaches to make the world more interactive
without any need for these technical implementations.

40Thursday
INP3 - 3:
9:50

December 10
Invited Haptic Technologies for Surface Interaction
H. Kajimoto
Univ. of Electro-Commun., JapanAs the touch panel does not have physical cues such as bumps andedges of a keyboard, applying haptic (tactile) display technology to thetouch panel was studied intensively. This talk introduce current trendsof haptic interface for surface interaction, as well as our recent studies
on electro-tactile displays.
INP3 - 4L
10:15

Demonstration of Interactive 3D Display Using
Holographic Screen and Consumer-Use 4K
Projector
T. Nakamura, S. Sakurai, S. Igarashi, M. Yamaguchi
Tokyo Inst. of Tech., Japan

INP3 - 5L
10:30

Character Recognition System Using Cellular
Neural Network Suitable for Integration on
Electronic Displays–Development of Simulator and Evaluation of
Operation–
T. Kameda*, M. Kimura*,**, Y. Nakashima**NAIST, Japan**Ryukoku Univ., JapanWe are developing cellular neural networks that might be suitable for
integration on electronic displays. In order to decide best architecture of
the neural networks, we developed a character recognition simulator.
We conﬁrmed that the neural networks can learn multiple characters.
Also presented in Innovative Demonstration Session (see p. 208)----- Break -----

Author Interviews and Demonstrations
19:00 – 19:40, Ohmi 6

13:40 - 15:40

Ohmi 6

Poster DESp2: Image Processing for Augmented Reality

41

AR & VR

We previously proposed an interactive 3D display, which is based on atransparent holographic screen and a projector-camera system. In thisreport, we demonstrate the interactive 3D display with improved 3D
image quality using a holographic screen and a consumer-use 4K
projector whose pixel count is 4096 2160.

Thu. / Fri.
DESp2 - 1L

December 10 / 11
AR Marker Available on Foldable Surfaces
H. Sasanuma, Y. Manabe, N. Yata
Chiba Univ., Japan

This paper is focused on marker-based AR technology. Existing AR
markers are almost available on only ﬂat surface. Therefore, this paper
proposes an original AR marker design and processing method thatcan recognize the marker on the foldable and cylindrical surface.
----- Break -----

Friday, December 11
9:00 - 10:20

Ohmi 9

3D4/VHF6: Autostereoscopic and Head-Mounted Displays
Chair:
Co-Chair:Y. Takaki, Tokyo Univ. of A&T, Japan
S. Uehara, Toshiba, Japan

3D4/
VHF6 - 1
9:00

HaptoMIRAGE: An Active-Shuttered Real Imaged
Auto-Stereoscopic Display
Y. Ueda, H. Nii*, K. Minamizawa, S. Tachi**
Keio Univ., Japan*IIJ Innovation Inst., Japan**Univ. of Tokyo, Japan

HaptoMIRAGE is an auto-stereoscopic display that does not require
the viewer to wear devices like 3D glasses. it is convenient to produce
content such that real objects and 3D virtual objects are combined.
Furthermore, multiple users can share the 3D view from theirrespective viewpoints.
3D4/
VHF6 - 2
9:20

Dual Orthogonal Flat Panel Autostereoscopic
Display Using Visible Gap Contraction Prism
H. Imai, N. Takanashi
NEC, Japan

We have developed a dual orthogonal ﬂat panel autostereoscopic
display using visible gap contraction prism. Since the prism contracts
the visible gap region between two orthogonal panels optically, it ispossible to diminish visual discomfort for viewer in observing
stereoscopic images.
3D4/
VHF6 - 3
9:40

Sense of Height and Virtual Body in Head-Mounted
Display Environments
T. Shibata, T. Inoue*
Tokyo Univ. of Social Welfare, Japan*Kanagawa Inst. of Tech., Japan

When using a head-mounted display, we cannot see our own body. We
conducted an experiment to evaluate effects of virtual body on theuserʼs sense of height and fear of heights. The results showed that thevirtual body increased the user sense of height slightly and fear ofheights signiﬁcantly.
42

Friday
3D4/
VHF6 - 4
10:00

December 11
Development of Poor Man’s 3D-AR Platform for
Amateur Game Creators
Y. Yoneda, E. Dong, T. Fujita, H. Kiriyama, K. Takemura,
K. Iwasaki, R. Urushihara*, T. Ichii
Tokyo Inst. of Tech., Japan*Ochanomizu Univ., JapanFor 3D-AR by amateur creators, development of a low-cost and easy touse platform is necessary. The system should be composed of low-cost
devices such as tablet-PCs and USB-cameras. However, theperformance of each device is low. We'll show the way to cover the
performance by combination of available sensors.
Also presented in Innovative Demonstration Session (see p. 206)----- Break ----10:40 - 12:00

Ohmi 9Chair:
Co-Chair:H. Sasaki, NICT, Japan
M. Tsuchida, NTT, Japan

3D5 - 1:
10:40

Invited 2D/3D Compatible Microstereopsis Display
Using Patterned Retarder 4KTV

AR & VR

3D5: 3D/Hyper-Realistic Display Systems

Y. Kuroki
Comfort Vision Res. Lab., JapanThe effectiveness of good depth perception with microstereopsis video
images of a 4KTV with patterned retarders was conﬁrmed. This
enables group viewing by persons wearing and without 3D-glasses.
This development will lead toward the wide use of 2D/3D compatible
motion images with low cost at high resolutions such as 8K.
3D5 - 2:
11:00

Invited See-Through Three-Dimensional Displayswith Motion Parallax for Precise Image
Superposition
Y. Takaki
Tokyo Univ. of A&T, Japan

See-through displays can render digital information on real scenes.
When see-through displays provide three-dimensional (3D) images
having motion parallax, 3D images can be precisely superimposed onreal objects. Two see-through displays with motion parallax aredemonstrated: the super multi-view windshield display and the seethrough integral imaging display.

43

Friday

December 11

3D5 - 3:
11:20

Invited See-Through Projection System
T. Higuchi, T. Yoshikawa, K. Hashikawa, M. Akagi,
T. Yoshizawa, K. Iwawaki, Y. Ito, H. Kogoma, N. Saegusa
Pioneer, JapanWe developed a new display system, “See-through projection system”,
consist of a projector and a transparent screen. Our system can beseen both bright images on the screen and the background images
through the screen. We introduce applications of See-throughprojection system.
3D5 - 4:
11:40

Invited Floating Image Display Based on a Dihedral
Corner Reﬂector Array
Y. Maeda
Parity Innovations, Japan

A ﬂoating image display using a dihedral corner reﬂector array, whichforms distortion-free real image based on retro-reﬂection, and its
applications are introduced as a future multimedia device. In one
instance, an observer can see a ﬂoating image by the naked eye andmanipulate it by touching the ﬂoating image.
Also presented in Innovative Demonstration Session (see p. 206)
Author Interviews and Demonstrations
12:00 – 12:40, Ohmi 6----- Lunch ----15:10 - 16:10

Ohmi 9

FMC5: Augmented Reality and Virtual Reality
Chair:
Co-Chair:

K. Käläntär, Global Optical Solutions, Japan
I. Amimori, LLC SN Partners, Japan

FMC5 - 1:
15:10

Invited Real-Time Dynamic Holographic 3D Display
in Materials to Future Holographic 3D Televisions
H. Gao, J. Liu, C. Zeng, Q. Yao, P. Liu, Y. Yu, H. Zheng,
Z. ZengShanghai Univ., China

We have realized real-time dynamic holographic 3D display inmaterials, which makes it possible to build large-size, high resolution,and video rate true 3D television or projector. In this talk, we will
present property of our holographic display materials and theirapplications in future 3D displays.

44

Friday
FMC5 - 2:
15:30

December 11
Invited Aerial Three-Dimensional Display Based on
Retro-Reﬂective Optical Imaging
D. Miyazaki, Y. Maeda*, S. Onoda, Y. Tokubo,
S. Murakami, R. Tamaki, T. Mukai
Osaka City Univ., Japan*Parity Innovations, Japan

Imaging with a retro-reﬂective optical element can provide ﬂoating
image formation with a wide view angle, because it has low-distortionin spite of high numerical aperture. Three-dimensional display
technologies based on retro-reﬂection with mirror arrays, a dihedral
corner reﬂector array and a roof mirror array are described.
Also presented in Innovative Demonstration Session (see p. 205)
FMC5 - 3
15:50

Polarization State Analysis for Polarized Aerial
Imaging by Retro-Reﬂection (PAIRR)
M. Nakajima*, K. Onuki*, I. Amimori**, Y. Hirotsugu*,***

This paper investigates polarization state of the reﬂected light fromretro-reﬂector in order to improve the brightness of the polarized aerial
imaging by retro-reﬂection (PAIRR). We have conﬁrmed the importanceof the effective reﬂectance. Then, we have found one of the suitable
prism type reﬂector for the PAIRR.
----- Break ----16:50 - 18:20

Ohmi 10

PRJ6: Wearable Applications
Chair:
Co-Chair:S. Shikama, Setsunan Univ., Japan
S. Ouchi, Hitachi, Japan

PRJ6 - 1:
16:50

Invited High-Luminance See-Through Eyewear
Display with Novel Volume Hologram WaveguideTechnology
S. Nakano, T. Oku, K. Akutsu, M. Kuwahara, T. Yoshida,
E. Kato, K. Aiki, I. Matsumura, A. Machida, H. Mukawa
Sony, Japan

We have developed a see-through eyewear display with novel volume
hologram waveguide. The waveguide has two in-coupling and one outcoupling reﬂection holograms. This technology enables to achieve highluminance (1000 cd/m2) and high-uniformity (70%) characteristics,
which is indispensable for augmented reality applications in various
environments.

45

AR & VR*Utsunomiya Univ., Japan**LLC SN Partners, Japan***JST, CREST, Japan

Friday
PRJ6 - 2:
17:15

December 11
Invited Augmented Vision for Minimally Invasive
Surgery
T. Nakaguchi
Chiba Univ., Japan

Laparoscopic surgery is one of the most important trends in modern
medicine. It, however, makes the surgical procedure much difﬁcult andrisky. Since augmented reality (AR) technologies have a potential toaddress these problems, we will present current situation and future
problem of the projector-based AR system in Medicine.
PRJ6 - 3
17:40

A Head Mounted Display Using the Original Flexible
Arm and Headband
M. Watanabe, Y. Fukuda, M. Yagi, H. Ishizaki,
M. Nakanishi*, N. Hanafusa**, T. Katano
Brother Inds, Japan*Keio Univ., Japan**Univ. of Tokyo Hospital, Japan

We have developed a Head Mounted Display “HMD” using the original
ﬂexible arm and headband. Users of this HMD can place the display at
the free position. The feasibility test of this HMD on ultrasound guided
vascular access puncture conﬁrmed good operability.
Also presented in Innovative Demonstration Session (see p. 207)
PRJ6 - 4L
18:00

An Applied Method for Wearable Device withAssortment Work in Logistics
T. Fujiwara, T. Kosaka, T. Matsuda, Y. Nakajima,
T. Sakurada*, T. Ozaki
Hitachi, Japan*Hitachi Transport Sys., Japan

Wearable device attracts many companies. Logistics department
especially expects it because getting advantage of hands-free. In thisstudy, we adapted wearable device to assortment work in logistics andevaluated cost cut effect in comparison with current method. As theresult of evaluation, cost cut effect is approximately 15%.
Author Interviews and Demonstrations
18:10 – 18:50, Ohmi 646

Wednesday

December 9

Special Topics of Interest on
Lighting Technologies
Wednesday, December 9
15:10 - 16:45

Ohmi 1

OLED2: OLED for Lighting Applications
Chair:
Co-Chair:Y. Kijima, JOLED, Japan
H. Kuma, Idemitsu Kosan, Japan

OLED2 - 1: Invited Recent Advances in OLED Lighting
15:10
M. Boesing, F. Lindla, A. Koehnen, V. Gohri*, M. Ruske*,
S. Hartmann, E. Meulenkamp*
Philips Business Ctr. OLED Lighting, Germany*OLEDWorks, USA
In this work we present our most recent advances w.r.t. OLED lighting
panel performance: By employing a new (improved) device structure in
combination with an internal light extraction concept and a highly
reﬂective top contact, we are able to drastically increase light extraction
efﬁcacy of the panel.
Blue Light Efﬁciency Enhancement of OLED by Thin
Film Included Micro-Particles and Copper Sulfate
Solution
C.-H. Chiu, W.-C. Chien*, C.-H. Chien*, Y.-H. Chen*
Chunghwa Picture Tubes, Taiwan*Tatung Univ., Taiwan
Copper sulfate solution and PDMS were used as the base material of
optical ﬁlm. Two kinds of micro metal oxide particles were chosen to be
doped into the optical ﬁlm. The optical thin ﬁlm attached to the OLED
can enhance 77% blue light intensity and increase color temperature of
550 K.
OLED2 - 3
15:50

High Efﬁcient and Stable Quantum Dots Film with
Interdiffused Structure as Down-Conversion
Material Utilized in Blue Organic Light Emitting
Diode for Solid-State Lighting Application
V. Arasu, D. Jo, B. Kim, H. Chung
Sungkywnkwan Univ., Korea

QDs Down-conversion ﬁlm with thin, efﬁciently dispersed, nonagglomerated were fabricated by ʻPolymer-free Nanoparticles
Adhesion Techniqueʼ. The achieved down-conversion enhancement
were 15% The major focuses were on development of highphotoluminescence (91%), nearly zero interface and Interdiffused-core/alloy/shell structure QDs materials synthesized by simple andreproducible one-pot hydrothermal injection method.

47

LIT

OLED2 - 2
15:30

Wed. / Thu.

December 9 / 10

OLED2 - 4
16:10

Fabrication of High Efﬁciency Color-Conversion
Layer for Hybrid OLED Lighting
B. Kim, D. Jo, D. Yoon, H. Chung
Sungkyunkwan Univ., Korea

Hybrid OLED has been used with blue OLED and giving color
changing layer to generate the white emission. In order to achieve high
CRI and efﬁciency, we have developed facile and efﬁcient fabrication
method for color conversion layer, called as Adhesive Transfer, yielding
the high packing density and out-coupling efﬁciency.
OLED2 - 5L Soluble Bipolar Red Host Material for Solution
16:30
Processed Organic Light Emitting Diodes
S.-R. Park, Y.-R. Cho, M. C. Suh
Kyung Hee Univ., Korea
We have fabricated highly efﬁcient red phosphorescent organic lightemitting diodes (OLEDs) by solution process combined with thermallyevaporated blue common layer structure. To obtain high performances,
we designed and synthesized a new bipolar host material withbenzocarbazole
andtr iphenyltr iazine
moieties(11-[3-(4,6-diphenyl-[1,3,5]triazin-2-yl)phenyl]-11H-benzo[a]carbazole,
RH).
Author Interviews and Demonstrations
16:30 – 17:10, Ohmi 6

Thursday, December 10
9:00 - 10:25

Ohmi 2

PH1: Phosphors for Lighting Application
Chair:
Co-Chair:A. Meijerink, Utrecht Univ., the Netherlands
K. Wani, TAZMO, Japan

PH1 - 1:
9:00

Invited High Directional LED Lighting for Forming
Pattern, HOLOLIGHT: Its Business Developments
and Prospects
T. Ikeda
Pi Photonics, JapanHOLOLIGHT is a unique patented LED lighting for forming patterncomprising square, round, line and arch. They have a lot of applications
for inspection, stage, architecture, road, safety, art, sightseeing,laboratory, entertainment and so on.
Also presented in Innovative Demonstration Session (see p. 205)48

Thursday
PH1 - 2:
9:25

December 10
Invited The GE TriGain Phosphor Based upon
K2SiF6:Mn4+ and Its Use in LED Lighting and LCD
Backlights
A. A. Setlur, F. Garcia, J. E. Murphy, S. P. Sista
GE Global Res., USA

Narrow-emitting downconverters, like GEʼs TriGain K2SiF6:Mn4+
phosphor, improve both brightness and color quality for general lighting
and LCD backlights. We discuss the performance of TriGain phosphors,focusing on how better phosphor chemistry gives higher efﬁciency,
reliability, and lower phosphor usage. TriGain phosphors arecommercially available from GE Lighting.
PH1 - 3
9:50

The Synthesis, Characterisation and Potential of
Eu3+ Doped Molybdate Phosphors for White Light
Emitting Diodes
A. Lipman, M. Fathullah, R. Stone, G. R. Fern,
T. G. Ireland,
C. Frampton, J. Silver
Brunel Univ. London, UK

PH1 - 4L
10:10

White LEDs Using Sharp β-sialon:Eu Phosphor andK2SiF6:Mn Phosphor for Wide-Color Gamut Display
Application
K. Yoshimura, H. Fukunaga, M. Izumi, M. Masuda,
T. Uemura, K. Takahashi*, R.-J. Xie*, N. Hirosaki*
Sharp, Japan*NIMS, Japan

Sharp B-sialon:Eu (Si6-zAlzOzN8-z:Eu 0<z<0.1) green phosphor issuitable for wide-color gamut white LEDs backlighting system becauseof its sharp and asymmetric emission spectrum shape. In this work, redphosphors are investigated for the purpose for improvement of thedisplay color gamut.
Also presented in Innovative Demonstration Session (see p. 206)----- Break -----

49

LIT

A wide variety of Eu3+ doped molybdate phosphors were synthesisedusing the solid state reaction route and their photoluminescent
properties were compared. Their crystal structures were investigated. A
relationship between cell size and emission intensity was apparent. The
implications of this for phosphor design are discussed.

Thursday

December 10

10:30 - 12:30

Ohmi 6

Poster PHp2: Phosphors for Lighting Application
PHp2 - 1

The Enhancement on Photoluminescence
Characteristics of Ba1-xZrSi3O9:xEu2+ Phosphors by
Sr2+Substituting
K.-C. Cheng, C.-H. Chiang, T.-S. Zhan, S.-Y. Chu
Nat. Cheng Kung Univ., Taiwan

In this article, single-phase Ba(1-x)ZrSi3O9:xEu2+, Sr2+ phosphors weresynthesized via the solid-state reaction method. The crystal structure
and luminescence properties were investigated using X-ray diffraction
and photoluminescence measurements, respectively. An increase of
the dopant Sr2+, increased the emission intensity of the phosphors.
PHp2 - 2

Effects of Fluxes on Luminescent Properties of
YAG:Ce Phosphors and Their Application to WhiteLight-Emitting Diodes
C.-H. Chiang, T.-S. Zhan, K.-C. Cheng, S.-Y. Chu
Nat. Cheng Kung Univ., Taiwan

In this work, the dependence of amount of the ﬂuxes (H3BO3 and BaF2)
on the luminescence of Y2.95Al5O12:0.05Ce3+ phosphors and theirapplication to white light-emitting diodes were investigated. The
difference in luminescent properties of phosphor prepared with BaF2
and H3BO3, was well explained by the powder morphology.
PHp2 - 3

High Directivity Light Source Based on Photonic
Crystal Structure
C. C. Chiu, F.-L. Hsiao
Nat. Changhua Univ. of Education, Taiwan

The light-emitting diodes(LED) have been widely applied in projector
displays and backlight. Especially, 3D display need highly directionaland High brightness light source. Some research also proved to limit
the light in speciﬁc area with the characteristics of photonic crystal
band gap so as to enhance the light extraction rate.
PHp2 - 4

Synthesis and Luminescent Properties of Novel
Ce3+- and Eu2+-Doped La3Br(SiS4)2 Bromothiosilicate
Phosphors for White LEDs
S.-P. Lee, T.-M. Chen
Nat. Chiao Tung Univ., Taiwan

Novel Ce3+- and Eu2+-doped La3Br(SiS4)2:Ce3+/Eu2+ bromothiosilicate
phosphors were prepared in a sealed ampule. The La3Br(SiS4)2:Ce3+
phosphor is excitable at 370 to 400 nm and generates a cyan emission,and the La3Br(SiS4)2:Eu2+ phosphor can be excited over a broad range
from UV to blue and generates a red broadband emission.
----- Lunch -----

50

Thursday

December 10

Author Interviews and Demonstrations
19:00 – 19:40, Ohmi 6

LIT

IDW Best Paper AwardIDW Outstanding
Poster Paper Award
These awards will go to the most outstanding papers
selected from those presented at IDW ’15.
The 2015 award winners will be announced on the
IDW website: http://www.idw.or.jp/award.html

Quantum Dots Sessions
PHp

10:30 – 12:30 Thursday, Dec. 10
Ohmi 6 (Poster)

MEET1 16:05 – 17:25 Thursday, Dec. 10
PH3
9:00 – 10:00 Friday,
Dec. 11
MEET5 16:50 – 18:20 Friday,
Dec. 11
Ohmi 8 (Oral)
51

Thursday

December 10

Special Topics of Interest on
Printed Electronics
Thursday, December 10
13:40 - 15:40

Ohmi 6

Poster FLXp3: Flexible Electronics 3
FLXp3 - 1

Development of Novel Primer Material Suitable for
COP Film and Ag Nano-Ink
T. Yamate*,**, E. Mieda*, K. Kumazawa*, H. Suzuki*,
M. Akazome***Nippon Soda, Japan**Chiba Univ., Japan

We have developed a unique organic-inorganic hybrid coating agent
suitable for a primer which connects Ag nano-ink to COP ﬁlm. This
material forms the glass-like surface on the topmost surface of thehybrid layer after UV irradiation. Therefore, Ag nano-ink can adhere
strongly with glass-like surface.
FLXp3 - 2L

Flexible Glass Substrate on Roll to Roll Gravure
Off-Set Printing Process
K.-T. Kuo, S. M. Garner, J.-C. Lin, P.-L. Tseng, S.-M. Lin,
M.-H. Huang, R. L. Smith, T. H. Chou*, C. W. Hsieh*,
Y. M. Wang*, S. Yang*, K. G. Wang*, H. Y. Lin*
Corning, USA*ITRI., Taiwan

Glass enables high-quality and long-life devices compared to plastic inelectronics industry. The ultra-slim ﬂexible glass also allows for new
device designs and continuous manufacturing enabled by roll-to-roll(R2R) processes. This paper describes how gravure off-set printing
applied to R2R process and made functional touch sensors on ultraslim ﬂexible glass.
FLXp3 - 3L

Control and Improvement of Electrical Performanceof Solution-Processable Organic Transistors by
Spin Coating from Mixed Organic Solvents
R. Nakamichi*, T. Nagase*,**, T. Kobayashi*,**,
Y. Sadamitsu***, H. Naito*,***Osaka Pref. Univ., Japan**The Res. Inst. for Molecular Elect. Devices, Japan***Nippon Kayaku, Japan

We have developed a simple method to control and improve theelectrical characteristics of solution-processable OTFTs based on
dialkylbenzothienobenzothiophenes by using mixed organic solvents.
Top-gate OTFTs processed by spin coating from mixed non-halogen
solvents exhibit high average ﬁeld-effect mobility of 8.4 cm2V-1s-1 andlow threshold voltage of ­0.18 V.
52

Friday

December 11
Friday, December 11

9:00 - 10:00

Ohmi 2

OLED4: Advanced OLED Technologies II
Chair:
Co-Chair:T. Komatsu, JOLED, JapanT. Fukuda, Saitama Univ., Japan

OLED4 - 1
9:00

Solution-Processed All Phosphorescent Small
Molecule White Multi-OLED System
K. Oikawa, T. Iwasaki, T. Tsujimura, Y.-J. Pu*, T. Chiba*,
S. Ohisa*, J. Kido*
Konica Minolta, Japan*Yamagata Univ., JapanWhite light emitting multi-OLED with small-molecule allphosphorescent system comprising two light emitting units and acharge generating layer (CGL) has been successfully developed for theﬁrst time in the world. In this paper, our proprietary solution-based
process technologies, especially small-molecule phosphorescentmaterials and layer stack design technologies, will be discussed.
OLED4 - 2
9:20

Novel Materials for Highly Efﬁcient Long-Lived
Solution-Processed Phosphorescent Red OLED
Devices
A. Hayer, P. Stoessel, N. Koenen, H. Heil, P. Levermore,
B. Burkhart, K. Stegmaier, E. Böhm, H. Buchholz
Merck KGaA, Germany

OLED4 - 3
9:40

OLED Dry Film Uniformity Compensation by Inkjet
Process
C.-Y. Lin, C.-Y. Lo
Nat. Tsing Hua Univ., Taiwan

Dry-ﬁlm uniformity issue from wet-processed OLED because of thecoffee-ring effect was improved by compensating the ﬁrst inkjet-printed
PEDOT:PSS with a second inkjet-printed one. Compensation volume,
drop arrangement, and printing sequence were studied for optimized
and improved ﬁlm uniformity in this work.
----- Break ----Author Interviews and Demonstrations
12:00 – 12:40, Ohmi 6----- Lunch ----53

PE

We demonstrate highly efﬁcient, long-lived ink-jet printable red
phosphorescent materials. We show a series of new red emitters withhigh photoluminescence quantum efﬁciency, narrow spectra, excellent
stability and very good printability. We further improve device
performance by developing adapted hole transport layers.

Friday

December 11

13:30 - 14:40

Ohmi 2

FLX4: Flexible Printed Electronics
Chair:
Co-Chair:T. Sekitani, Osaka Univ., Japan
M. Ito, Toppan Printing, Japan

FLX4 - 1:
13:30

Invited Exploring Low-Dimensional Charge
Transport Phenomena in Solution-Processed Metal
Oxide Superlattice Transistors
Y. H. Lin, K. Zhao*, R. Li**, A. Amassian*, T. D. Anthopoulos
Imperial College London, UK*King Abdullah Univ. of S&T, Saudi Arabia**Cornell Univ., USA

We report on metal oxide superlattice systems grown from solution andtheir use in high electron mobility transistors. On the basis oftemperature-dependent electron transport measurements and carrier
distribution evaluation, we argue that the enhanced performance arises
from the presence of 2-dimensional electron gas-like systems formedat the oxide-oxide heterointerfaces.
FLX4 - 2:
13:55

Invited Fluorophilicity as Selection Criterion ofSolvents for Printed Organic Electronics
Y. Kuwana, T. Abe, N. Shirota, T. Sakurada, M. Obi
Asahi Glass, Japan

We investigated the deterioration of carrier mobility of organic thin ﬁlm
transistors after immersing into various solvents containing ﬂuorine.
The deterioration was correlated with the ﬂuorophilicity, the partition
ratio between solvents containing ﬂuorine and without ﬂuorine. The
ﬂuorophilicity will be a useful parameter for screening the process
solvent.
FLX4 - 3
14:20

Highly Stable Transparent Conductive Coatings on
Ultra-Thin Glass for Flexible Devices
M. Junghaehnel, S. Weller, T. Gebel*, W. Skorupa**,
T. Schumann**
Fraunhofer, Germany*DTF Tech., Germany**Helmholtz-Zentrum Dresden-Rossendorf, Germany

Ultra-slim ﬂexible glass is an emerging ﬂexible substrate material for
ﬂexible displays, devices or lighting. 100 Mm thick ﬂexible glasses with amaximum dimension of 250 x 300 mm² were deposited with ITO andIZO at room temperature. The ﬁlms were reﬁned by in-line ﬂash lamp
annealing in the millisecond time range.
----- Break ----Author Interviews and Demonstrations
18:10 – 18:50, Ohmi 654

Wednesday

December 9

Workshop on
LC Science and Technologies
Wednesday, December 9
13:30 - 14:55

Ohmi 9

LCT1: Fascinating High Resolution Panel Technologies
Chair:
Co-Chair:S. Ishihara, Osaka Inst. of Tech., Japan
A. Kubono, Shizuoka Univ., Japan

LCT1 - 1:
13:30

Invited The Latest IPS LCD Technology Realizing
Super High Resolution and Wide Color Gamut
I. Hiyama, R. Oke, K. Miyazaki, J. Maruyama, N. Sato,
T. Kato, A. Hirota
Panasonic Liquid Crystal Display, Japan

We applied the unique pixel driving technology by a-Si TFT to 55-in.
8K4K panels and have achieved super high resolution and wide color
gamut in the worldʼs smallest size. This brings a new level of
performance for the professional applications such as medical,
broadcast and special industrial displays.
LCT1 - 2
13:55

Reﬂective Color LCDs with High Image Quality
Using LTPS TFTs in Low Frequency Driving
H. Yamaguchi, Y. Kawata, Y. Matsuura, M. Akiyoshi,
K. Takebayashi, T. Sano, A. Murayama, Y. Fukunaga,
M. Tamaki, M. Mitsui, N. Takasaki, T. Nakamura, Y. Aoki,
H. Hayashi
Japan Display, Japan

LCT1 - 3
14:15

High Resolution Display Solution with LTPS
Technology
C. P. Xiang, Z. D. Zhang, H. Wu, Y. Z. Ma, B. P. Liu,
B. Z. Liu, L. Wen, X. F. Zhou, B. P. Shen, J. Y. Li,
Z. H. Zeng
Xiamen Tianma Microelect., China

The resolution of smartphone display will be increased to satisfy thedemand of high performance. In this paper, we indicate the challengesof high resolution display: lower luminance, poor chromatism andserious technology process control; ﬁgure out the solutions and show
the LCD display with a resolution of 847 ppi.
Also presented in Innovative Demonstration Session (see p. 205)
55

LCT

Image persistence and ﬂicker are major issues for low frequency
driving. Detailed investigation of the mechanism that produced these
phenomena enabled us to reduce them to acceptable levels. We
successfully developed a 7.0-in. WUXGA (1200 RGBW 1920)
reﬂective color LCD driven by low temperature poly-silicon (LTPS)
TFTs at 1Hz.

Wednesday
LCT1 - 4
14:35

December 9High Performance Active-Matrix Transparent Display
by PDLC and High Transmittance Backlight Module
C.-H. Chen, C.-W. Su, J.-T. Lien
Chunghwa Picture Tubes, Taiwan

In this paper, we have succeeded to develop a 6.1-in. transparent LCD
by using polymer-dispersed liquid crystal and high transmittancebacklight module technology, which transmittance can be achieved
20% upward. In addition, there are some advantages, such as,polarizer free, driving voltage satisﬁed with active-matrix TFT, and soon.
----- Break ----15:10 - 16:10

Ohmi 9

LCT2: Advanced LC Materials
Chair:
Co-Chair:I. Hiyama, Panasonic Liquid Crystal Display, Japan
F. Araoka, RIKEN, Japan

LCT2 - 1
15:10

Oligothiophene-Based Chiral LC Semiconductors:
Circularly Polarized Light Emission and Anomalous
Photovoltaic EffectM. Funahashi, T. Hamamoto, Y. Funatsu, A. Seki
Kagawa Univ., Japan

Conventional organic semiconductors including liquid crystalline
semiconductors are achiral. And conventional chiral LC compounds are
not electroactive. In this presentation, we report circularly polarized
light emission and luminescence color tuning from the N* phase ofphenylterthiophene dimers and anomalously photovoltaic effect in the
SmC* phase of phenylterthiophene derivatives.
LCT2 - 2

Withdrawn

LCT2 - 4L
15:30

Enhancing Azimuthal Anchoring for IPS and FFS
modes by Polymer Surface Stabilized Method
K. Obayashi, H. Ozeki, Y. Iimura
Tokyo Univ. of A&T, JapanTo reduce the image sticking, we use a polymer surface stabilized
method to enhance surface anchoring for a photo-alignment method.
The method is applied not only to IPS, but also to FFS. The results are
discussed by considering the differences surface electric ﬁeld
distribution for the two modes.

56

Wed. / Thu.
LCT2 - 3
15:50

December 9 / 10
Gradual Transition from Ferroelectric to
Antiferroelectric LC Phase for Binary Mixture
SystemZ. Feng, K. Ishikawa
Tokyo Inst. of Tech., Japan

Phase transition of ferroelectric MC452 and antiferroelectric MC881
mixtures were measured by an improved simultaneous method. We
conﬁrmed the most easily deformable region in the Electric ﬁeld andTemperature contour diagram of electric-ﬁeld-induced birefringencearises from the divergence of helical pitch, which can be used in novel
display technologies.
Author Interviews and Demonstrations
16:30 – 17:10, Ohmi 6

Thursday, December 10
10:30 - 12:30

Ohmi 6

Poster LCTp1: Display Evaluations
LCTp1 - 1

Improving L0 Leakage of LCD Panel with COA
Structure by Optimizing Through Hole Proﬁle ofColor Filter and Shape of Second Metal
J. Li, H. H. Chen, Y.-J. Lee
Shenzhen China Star Optoelect. Tech., China

Two methods have been carried out to improve the L0 leakage of LCD
panel with the structure of COA: tuning the hole proﬁle of RGB color
ﬁlter, and redesigning the shape of second metal layer (M2). The resultshow that the L0 leakage was substantially improved.
LCTp1 - 2

Research Gamma Curve of VA Mode and ADS Modein Oblique Direction

LCT

Y. Y. Qu, H. L. Zhang, H. B. Zhao, T. Dong, F. F. Wang,
S. M. Lee, D. Wang, X. B. Shao
BOE Display Tech., China
Our experimental results show the difference of gamma curve in ADS
mode and VA mode, Especially in the high gray scale, and analyze thecause.
LCTp1 - 3

Analysis of the Flicker Shift of Advanced Super
Dimension Switch Mode TFT-LCD
C. Chen, S. Wang, Z. Zhang, H. Chu, J. Ma, J. Zhang,
K. H. Park, Y. B. Lee, C. Che, S. K. Lee
BOE HF, China

We investigated the ﬂicker shift behavior of ADS (Advanced Super
Dimension Switch) mode TFT-LCD with different LC and PI. For the
precisely explain the ﬂicker shift behavior in different LC and PI test
split, the residual DC Discharge characteristic was studied.
57

Thursday
LCTp1 - 4

December 10
Research of Optical Performance about TFT-LCD
with Different Array Layer Combinations
Z.D. Zhang, B.Y. Zheng, L. Wu, B.P. Shen, C.H. Tseng
Xiamen Tianma Microelect., China

We have developed different array layer combinations throughsimulation and experiment, in case of the device electricalperformance, aimed to receive a perfect array layer combination .The
combination have good optical performance in chromaticity, JNCD,
view-angle and also have large margin in manufacturing process toachieve high yields.
10:30 - 12:30

Ohmi 6

Poster LCTp2: Innovative Technology for Surface/Interface Control
LCTp2 - 1

Photoinduced In-Plane Alignment of Nematic LCs
Doped with Photoalignable Composite Materials
N. Kawatsuki, Y. Hashimoto, M. Kondo, T. Sasaki*,
H. Ono*Univ. of Hyogo, Japan*Nagaoka Univ. of Tech., Japan

Photoalignment of low-molecular-liquid crystalline (LC) cell is exploredwithout surface treatment of the substrates. A linearly polarized (LP)light exposure to a LC cell containing nematic LCs and a small amountof photoresponsive material generates homogenous LC orientation of
the cell. Material design, mixture ratio and exposure condition areinvestigated.
LCTp2 - 2

Two-Band Photo-Alignment Method for High Speed
TN-LC Cell
K.-W. Park, B.-J. Mun, J. H. Lee*, B. K. Kim*, H. C. Choi*,
G.-D. Lee
Dong-A Univ., Korea*LG Display, Korea

We proposed the high speed twisted nematic (TN) liquid crystal (LC)cell on the photosensitive polyimide (PI) embedded with reactive
mesogens (RMs) by applying two-bend separated UV exposure
method. Demonstration for electro-optical properties is performed byexperiments and we ﬁnally conﬁrmed the enhanced response time ofphoto-aligned TN LC cell.

58

Thursday
LCTp2 - 3

December 10
The Study of Pre-Tilt Alignment with Different
Photo-Reactive Side Chains in Surface-Controlled
VA ModeR. Zhao*, C.-C. Hsieh*, Y. Zhao*, Y. Song*, X. Li*,
C.-Y. Chiu*, C.-Y. Lee*, A. Lien*,***Shenzhen China Star Optoelect. Tech., China**TCL Corporate Res., China

Surface-controlled vertical alignment is an upgrading method of PS-VA.
In this study, we use reactive mesogen as side chains of polyimide andadopt UV curing process to investigate the pre-tilt alignment of liquid
crystal. The pre-tilt formation and reliability performance of different
side chains are discussed, respectively.
LCTp2 - 4

Pretilt Angle Control of LCs with Homeotropic
Alignment Using Photocurable Polymer
C.-J. Hsu, B.-L. Chen, C.-Y. Huang
Nat. Changhua Univ. of Education, Taiwan

We proposed an approach to control pretilt angle of liquid crystals(LCs)by LC/NOA65 mixture in homeotropic LC cell, which features simple
fabrication process without applied voltages during exposure and lessscattering because of low polymer concentration. The pretilt angle canbe controlled from 90o to ~3o with various NOA65 concentrations.
LCTp2 - 5

Zinc Oxide Films for Controlling the Pretilt Angles
of LC Devices
C.-C. Liu, J.-W. Hu, S.-C. Jeng
Nat. Chiao Tung Univ., Taiwan

The tunable pretilt angles of liquid crystal (LC) molecules aligned on
the inorganic zinc oxide (ZnO) ﬁlm with controllable surface wettability
are demonstrated. Our experimental results show that the pretilt angles
of LCs on ZnO ﬁlms can be successfully adjusted over a wide range.
LCTp2 - 6

Random Alignment of Nematic LC on Graphene
Films and the Electro-Optical Characteristics

LCT

A. Nakamura, T. Nakagaki, A. Kubono
Shizuoka Univ., Japan
Fast response and a wide viewing angle of a liquid crystal display wereachieved using a graphene CVD ﬁlm as one of the electrodes. The highperformances were associated with the speciﬁc alignment.
LCTp2 - 7

Film Substrate Which Needs No Alignment Layer for
LC Molecules
T. Araishi, Y. Yoshida, Y. Kimura, S. Ishihara
Osaka Inst. of Tech., Japan

We have been investigating different ﬁlm compositions for a ﬂexible ﬁlm
substrate that does not need an alignment layer. In this study, weinvestigated factors that inﬂuenced the LC alignment on the ﬁlm anddemonstrated a good switching behavior in IPS mode ﬁlm LCDs.
59

Thursday

December 10

10:30 - 12:30

Ohmi 6

Poster LCTp3: Optical Elements for Phase Control
LCTp3 - 1

The Optical Characteristic of a PolarizationDependent Diffuser Based on NOA65-Doped E7
W.-K. Lin, W.-C. Su
Nat. Changhua Univ. of Education, Taiwan

A polarization-dependent diffuser is fabricated with liquid-crystal (E7)and polymer (NOA65). In this study, the optical characteristic of thesample is researched, and the diffuser is proved it can be a seethrough screen without applied voltage.
LCTp3 - 2

Negative Dispersion-Negative Birefringence
Retarder for the Compensation Film of LCDs
A.K. Srivastava, S. Yang, H. Lee, H. Kim, S. Yeo,
J.-H. Lee
Chonbuk Nat. Univ., Korea

We demonstrated negative dispersion half and quarter wave retarders
by varying the angle (φ) between the extraordinary axes of two
negative birefringence ﬁlms and their retardation values. The optimum
values of φ for half and quarter quarter-wave retarders were 40o and
70o respectively for different retardation values of the ﬁlms.
LCTp3 - 3L

Electro-Optical Iris Diaphragm Based on Twist
Nematic Liquid Crystal Films Coating with Poly(NVinyl Carbazole)
S. T. Wu, A. Y.-G. Fuh, K. N. Chen
Nat. Cheng Kung Univ., Taiwan

This study develops an electro-optical light shutter that automaticallydetermines the optimum transmittance upon the intensities of the
exposed UV lights. The ﬁlm applies photoconductive polymer poly(Nvinyl carbazole) based on twist nematic liquid crystals that could be
operated under a parallel/cross-polarizer to adjust the light beam/ringin optic integrated system.
LCTp3 - 4L

Mechanism of Low Driving Voltage in Polymer
Stabilized Reverse Mode Cell
K. Inoue, R. Yamaguchi
Akita Univ., Japan

A mechanism of low driving voltage of 3 V is discussed in a polymer
stabilized reverse mode cell. LC dielectric constants in large and small
domains are estimated and the difference of LC reorientation voltage ineach domains is indicated to mainly cause a strong light scattering.
----- Lunch -----

60

Thursday

December 10

13:40 - 15:40

Ohmi 6

Poster LCTp4: IPS/FFS Display Modes
LCTp4 - 1

A Novel Method to Simulate the Flexoelectric Effectin FFS LCD
K.-C. Chu, S.-Y. Su, H.-W. Cheng, W.-C. TsaiAU Optronics, Taiwan

We propose a method to simulate the ﬂexoelectric effect (FEE) in
positive/negative liquid crystals. The suitable ﬂexoelectric coefﬁcientsfor FEE calculations were obtained by comparing the pixel images
between experiment and simulation. Using this method, the FEE
simulations agree with the previous works and look forward to the FEE
improvement effectively.
LCTp4 - 2

Withdrawn

LCTp4 - 3

The Chromaticity Study of the Photo Alignment IPS
LC ModeY. Zhao, Y. Song, C.-C. Hsieh, R. Zhao, X. Li, C.-Y. Chiu,
C.-Y. Lee, A. Lien*
Shenzhen China Star Optoelect. Tech., China*TCL Corporate Res., China

A new photo alignment material for in-plane switching (IPS) has beenpresented We have investigated the effect of the manufacturing
process and material composition on the alignment ability and panel
chromaticity. An excellent chromatic performance and alignment
stability can be achieved by optimized the composition of photoalignment material.
LCTp4 - 4

The Study of Transmittance of Negative and Positive
LC Effect on FFS/IPS ModeY. Song, Y. Zhao, R. Zhao, C.-C. Hsieh, C.-Y. Chiu,
C.-Y. Lee*, A. Lien*

LCT

Shenzhen China Star Optoelect. Tech., China*TCL Corporate Res., China
The in-plane switching (IPS) and fringe ﬁeld switching (FFS) liquid
crystal mode has widely application for manufacturing highperformance displays due to the wide viewing angle and highresolution. In this paper, we have investigated the transmittance ofnegative and positive liquid crystal effect on IPS and FFS mode.

61

Thursday
LCTp4 - 5L

December 10
Suppression of Image Flicker in a Liquid Crystal
Display Under Low-Frequency Driving
S.-W. Oh, J.-H. Park, T.-H. Yoon
Pusan Nat. Univ., Korea

In case a liquid crystal display panel is driven by a low-frequency fringe
ﬁeld, image ﬂickering phenomenon can be noticeable by the naked
human eye. We investigated dependence of image ﬂicker in a
homogeneously-aligned liquid crystal cell on the sign of dielectricanisotropy, electrode structure, and applied voltage waves.
LCTp4 - 6L

Design and Simulation of OC-IPS, OC-FFs, and
OC-HV-FLCD Exhibiting High Speed Response
S. Kobayashi, H. Akiyama*
Tokyo Univ. of Sci. Yamaguchi, Japan*DIC, JapanA designing theory and simulation of optically compensated IPS, FFS
and HV-FLCD has been developed and it is shown that Toff is reduced
over ﬁve-fold and more by setting the angle of optical compensator, +A
plate is to be 3P/4+A, where A = ­0.10 ~ 0.12.
LCTp4 - 7L

Micro Vision Cell Parameter Comparison of FFS
Photo Alignment LCD Using High and Low Power
Exposure Energy
K.-T. Huang, Y.-W. Hung, R.-X. Fang, Y.-T. Chao, T. Lee,
C. Lee, S.-C. Lin, C. Kuo, T.-S. Jen
HannStar Display, Taiwan

In this paper, we analysis the cell parameter of FFS LCD which are
made with the same UV dosage and different exposure power of photoalignment technology. Decomposition photo reaction type PI materialand 254 nm LPUV is used. The local area of sub-pixel cell parameterare compared and be discussed.
LCTp4 - 8L

Fast In-Plane Switching of a Liquid Crystal Cell byUsing Parallel Patterned Electrodes
J. Heo, T.-H. Choi, J.-W. Huh, T.-H. Yoon
Pusan Nat. Univ., Korea

We propose a LC cell with parallel patterned electrodes for fast
response time. The proposed cell shows faster response time than thatof the conventional FFS mode, because of smaller optimum thicknessof the LC layer. The proposed cell exhibits wide viewing angle
characteristics similar to the conventional FFS mode.

62

Thursday

December 10

13:40 - 15:40

Ohmi 6

Poster LCTp5: Emerging LCD Technologies
LCTp5 - 1

Polarizer-Free LCD Having Black Dyes
G. H. Kim, W.-J. Lee, Y.-H. Kim, C.-S. Hwang
ETRI, Korea

Polarizer-free LCDs were prepared by doping a black dye into NLCs. To
evaluate electro-optical performance, we developed a 3.5-in. AM TFT
transparent LCD and a 3-in. PM LCD by using black dye doped-LC
technology. The obtained LCDs exhibit good optical performance, fast
response times and low driving voltage.

LCTp5 - 2

Edge Emission Patterns from an LC/Dye Cell
S. Itaya, N. D. B. M Azumi, M. Ohta, S. Ozawa, I. Fujieda
Ritsumeikan Univ., Japan

Edge emission from an LC/dye cell is more intense in certain angularranges. Its spectrum varies with the emission angle in a complicatedmanner. Some effects might be due to self-absorption and re-emission
by the dye material and others might be purely optical. Further
experiments will verify these speculations.
LCTp5 - 3

A Transparent Display Based on Dye-Doped LC
Technology
J.-N. Lin, C.-W. Su
Chunghwa Picture Tubes, Taiwan

In this paper, we have succeeded to develop a 4.7-in. transparent
display by using dye-doped liquid crystal (DDLC) technology. The
DDLC can be achieved low operating voltage, high transmittance, andgood contrast ratio. Thus, the 4.7-in. colorful transparent display byusing DDLC technology has good visibility and transparency.
Dual-View Blue Phase LCD

LCT

LCTp5 - 4

C.-T. Hsieh, C.-H. Chang, C.-Y. Lin*, C.-Y. Tsui*,C.-Y. Huang*, C.-J. Hsu*, C.-J. Tien**, K.-Y. Lo***AU Optronics, Taiwan*Nat. Changhua Univ. of Education, Taiwan**Cheng Shiu Univ., Taiwan***Nat. Cheng Kung Univ., Taiwan
We design a blue phase dual-view display with high contrast ratio andlow cross talk. The patterned-electrode provides inclined ﬁeld parallelto the unintended viewing direction, creating zero phase retardationand dark state in the unintended viewing direction. The operation
mechanism, device parameters are discussed.

63Thursday

December 10

LCTp5 - 5

Withdrawn

LCTp5 - 6

Electric Field Effect on Polymerization Process ofPolymer-Stabilized Blue Phase LC
W.-H. Li, D.-C. Hu, Y.-J. Lee*, A. Lien**, J.-G. Lu
Shanghai Jiao Tong Univ., China*Shenzhen China Star Optoelect. Tech., China**TCL Corporate Res., China

The process of applying electric ﬁeld during polymerization of polymerstabilized blue phase LC (PS-BPLCs) is proposed to improve thedriving capacity and contrast ratio of PS-BPLCs. By optimizing theprocess, the Kerr constant and hysteresis can be improved signiﬁcantly.
Meanwhile, it is also an effective way to improve the contrast ratio.
LCTp5 - 7L

Fundamental Study on Lateral Shearing Properties
of Nematic LC Cells
T. Nose, S. Ishisaka, K. Okano, N. Fujita, J. Murata,
H. Muraguchi, N. Ozaki, M. Honma, R. Ito
Akita Pref. Univ., Japan

LC cell can be used as uniaxial crystal whose optic axis is oblique by
applying a suitable voltage. Incident ordinary and extraordinary rays
sprit laterally just a little, and the behavior is useful for differentialinterference-contrast (DIC) observation. Then, lateral shearing
properties are investigated for various types of LC cells.
LCTp5 - 8L

Response Properties of Twisted Nematic Liquid
Crystal Gratings
M. Honma, Y. Aki, K. Takahashi*, R. Yamaguchi*, T. Nose
Akita Pref. Univ., Japan*Akita Univ., Japan

We investigate the response properties of micropatterned twisted
nematic liquid crystal (TN LC) gratings. The rise and decay times are
discussed together with the theoretical expression of the response
time. It is revealed that the measured response time obeys the similar
formula to that for conventional uniformly aligned LC cells.
LCTp5 - 9L

Morphological Control of the Liquid Crystal
Droplets in Molecular-Aligned Polymer for
Substrate-Free LCDs
D. Sasaki, T. Ishinabe, H. Fujikake
Tohoku Univ., JapanTo realize substrate-free liquid crystal displays with high contrast
images, we have proposed a new molecular-aligned composite ﬁlm of
LC and polymer. We clariﬁed that the aggregate morphology of twisted
LC droplets can be controlled by the temperature and UV intensity
during UV exposure through the photo mask.

64Thursday

December 10

LCTp5 - 10L Enhanced Electro-Optic Characteristics of a Liquid
Crystal Display Aided by Polymer Networks
T.-H. Choi, Y. Choi, Y.-J. Park, J.-W. Kim, T.-H. Yoon
Pusan Nat. Univ., Korea
We conﬁrmed that we can increase the cell gap in a polymernetworked cell for higher transmittance without sacriﬁcing the response
time. By employing a polymer-networked cell with a polymer
concentration of 3 wt%, we achieved a relatively fast response time of
18 ms even at –20 C.
LCTp5 - 11L Driving Voltage Reduction of Flexible Blue Phase
Liquid Crystal Devices Containing Polymer Walls
H. Sakai, T. Ishinabe, H. Fujikake
Tohoku Univ., Japan
A ﬂexible blue phase LCD with polymer wall structure has been
proposed for high-contrast display. We clariﬁed that the driving voltage
largely depends on the collimation angle of UV light and monomer
concentration during patterned UV irradiation. We successfully realized
low driving voltage of blue phase LC with polymer walls.
LCTp5 - 12L Fabrication of Flexible Ultra-Thin Liquid Crystal
Devices Using Coat-Debond Plastic Substrates with
Etched Post Spacers
Y. Obonai, T. Ishinabe, H. Fujikake
Tohoku Univ., JapanTo realize ﬂexible LCDs, high dimensional stability for temperature isrequired for plastic substrates. Using polyimide substrates formed by
the coat-debond method, we have developed ﬂexible LC devices withetched post spacers. As a result, we successfully achieved ﬂexible
LCDs that have high ﬂexibility without degradation of opticalcharacteristics.
13:40 - 15:40

Ohmi 6LCT

Poster LCTp6: Liquid Crystal Lens
LCTp6 - 1

LC Lens with Different Cell Gap
R. Bao, G. Chen, H. Mai, M. Ye
SuperD, China

The dependence of optical power and decay time on cell gap of a liquid
crystal lens are studied. The maximum optical power increases nearlylinearly with the increase of cell gap, and the decay time increases
approximately linearly with increasing cell gap squared.

65Thursday
LCTp6 - 2

December 10
Thermally Controllable and Polarization
Independent LC Lenses Fabricated on Flexible
Substrates
Y.-Y. Chiu, C.-Y. Chien, C.-R. Sheu
Nat. Cheng Kung Univ., Taiwan

In this study, a convex liquid crystal (LC) lens fabricated on ﬂexible
PDMS substrates is demonstrated. Due to PDMS surface providing ahomeotropic LC alignment, the fabricated LC lenses are polarization
independent and thermally tunable focuses. Furthermore, the LC
lenses still keep lens functions even in bending situation.
LCTp6 - 3

Withdrawn

LCTp6 - 4

Tunable Optical Deﬂector with Fresnel Type of LC
DeviceG. Shibuya, H. Yoshida, M. Ozaki
Osaka Univ., Japan

We have developed a new type of tunable Fresnel deﬂector composedof liquid crystal. Novel structure of thin ﬁlms makes a saw-tooth
distribution of refractive index in the LC material. Optical tilt angle of
0.6 deg. was achieved to apply for optical image stabilizer (OIS) without
any moving parts.
LCTp6 - 5Completely Preventing Disclination Lines Occurredin LC Lens Array via an Additionally Whole
Photoresist Film
P.-H. Tang, Y.-J. Chang, C.-R. Sheu
Nat. Cheng Kung Univ., Taiwan

A simple and effective method to prevent disclination lines in liquid
crystal (LC) lens array is proposed. By means of an extra wholephotoresist ﬁlm coated on hole-patterned ITO (indium tin oxide)
electrodes, there will be no disclination line when electrically operating
LC lens arrays.
LCTp6 - 6L

2D-3D Switchable Auto-Stereoscopic Multi-View 3D
Mobile Display Using Polarization Dependent
Reactive Mesogen Lens Array Film
M.-K. Park, K.-B. Son, M. Kim, H.-R. Kim
Kyungpook Nat. Univ., Korea

We demonstrate a 2D-3D switchable auto-stereoscopic 15-view 3D
mobile display using polarization dependent reactive mesogen (RM)
lens array ﬁlm. In our active RM lens array with slim thickness, an ideal
lens proﬁle is obtained with short focusing behavior and a sphericalaberration is eliminated by using the aspherical lens curvature.
Also presented in Innovative Demonstration Session (see p. 205)----- Break -----

66

Thursday

December 10

16:00 - 17:25

Ohmi 93D2/LCT3: Autostereoscopic 3D Displays
Chair:
Co-Chair:Y. Kuroki, Confort Vision Res. Lab., JapanS. Oka, Japan Display, Japan

3D2/
LCT3 - 1:
16:00

Invited LC GRIN Lens Technology for MultiFunctional 3D Display
S. Uehara
Toshiba, JapanAn LC GRIN lens is a signiﬁcant component for 2D/3D display,
because the lens function is easily changed due to an electrode designand driving method. We introduce our recent developments of threecore technologies for the LC GRIN lens, those are, LC lens mode,
driving method, and electrode structure.
3D2/
LCT3 - 2
16:25

Video Capable Dual-Layer Autostereoscopic Display
with Motion Parallax
H. Suginohara, M. Sugano, K. Minami
Mitsubishi Elec., Japan

We have developed the prototype of video capable dual-layer
autostereoscopic display. We implement Depth-Image-Based
Rendering in an FPGA so that we can render the dual-layered
individual viewpoint video following the viewer position in real-time. Our
prototype can display a 3D video with motion parallax within +/- 20
degrees viewing area.
3D2/
LCT3 - 3
16:45

Resolution Multiplication Method for
Autostereoscopic 3D Display
F. Mukhtarov, S. D. Hwang
Samsung Elect., Korea

3D2/
LCT3 - 4
17:05

Wide Viewing Angle Autostereoscopic 3D Display
with Eye-Tracking System
Y. Hyodo, S. Oka, T. Koit, H. Sugiyama, Y. Maede,
T. Ochiai, T. Takahashi, S. Komura
Japan Display, JapanA new eye-tracking 3D panel was developed by smoothing the motionof a liquid crystal (LC) active barrier and by reducing crosstalk using
new designs of supporting electrodes in the barrier and in-planeswitching electrode of an LC panel. We demonstrated excellent visibility
in a 3D viewing zone.
Also presented in Innovative Demonstration Session (see p. 206)----- Break ----67

LCT

In this paper we present new resolution multiplication methods for
Displays, based on controllable variations of refractive index of liquid
crystal prism array. Simultaneously with index variations the displayedcontents need to be updated in time-sequential mode. Initial tests showpromising results for both 2D and 3D types of displays.

Thursday

December 10

17:40 - 18:40

Ohmi 2

LCT4: New Fast Response LCDs
Chair:
Co-Chair:N. Kawatsuki, Univ. of Hyogo, Japan
K. Miyachi, Sharp, Japan

LCT4 - 1
17:40

Fast Twist-VA Bidirectional Field Switching Mode
LCD
A. R. Geivandov, M. I. Barnik, I. V. Kasyanova,
V. S. Palto, S. P. Palto
Shubnikov Inst. of Crystallography RAS, Russia

For the ﬁrst time we have used bidirectional ﬁeld switching mode forinducing twist in VA LC cell. The advantage of the new method is
submillisecond speed of the switching achieved by excluding the ﬁeldoff viscous-elastic relaxation of nematic LC molecules.
LCT4 - 2
18:00

Properties of Nano-Phase-Separated LCs with Fast
Response
T. Fujisawa, K. Jang, F. Kodera, M. Gushiken, S. Kosaka,
G. Sudou, H. Hasebe, H. Takatsu
DIC, JapanA Nano-Phase Separated LCs, which is one of polymer/liquid crystal
composite, realizes faster response than polymer sustained verticalaligned liquid crystals. In further improvement, the decay time less than
1 ms is achieved. In addition, a relatively fast decay time is attainedeven at a low temperature.
LCT4 - 3
18:20

LC Phase Modulators with Fast Optical Responseand Low Light Scattering Realized via Processes of
He-Ne Laser Holographic Exposure
C.-Y. Chien, Y. -W. Chen, C.-R. Sheu
Nat. Cheng Kung Univ., Taiwan

Phase modulators play an important role in most electro-opticalapplications. In this study, a process of He-Ne laser holographic
exposure is used to realize liquid crystal phase modulator with fast
optical response and low light scattering. The fabricated phasemodulator is capable of 2P phase modulation when applying voltages.
Author Interviews and Demonstrations
19:00 – 19:40, Ohmi 6

68

Friday

December 11
Friday, December 11

9:00 - 10:30

Ohmi 3

FLX2/LCT5: Flexible LCDs
Chair:
Co-Chair:H. Funahashi, Kagawa Univ., Japan
H. Okada, Toyama Univ., Japan

FLX2/
LCT5 - 1:
9:00

Invited Advanced Polymer and LC Technologies forHigh Quality Flexible Displays
H. Fujikake, H. Sakai, A. Sato, E. Uchida, D. Sasaki,
Y. Obonai, Y. Isomae, T. Ishinabe
Tohoku Univ., JapanFor a practical ﬂexible liquid crystal display, ﬁne polymer spacer walls
and networks are formed in a nematic liquid crystal layer for stabilizing
substrate gap. Total optical compensating design methods using plastic
substrates are also presented for wide viewing angle, and ﬂexible
backlight is discussed for whole ﬂexible display systems.
FLX2/
LCT5 - 2
9:25

Uniform Lying Helix of Cholesteric LC Aligned byMeans of Coating Method with Electric Treatment
N. Endo, M. Kimura
Nagaoka Univ. of Tech., JapanThe feature of Uniform Lying Helix (ULH) is its fast response speed
whereas the alignment process of ULH is not simple. Previously we
proposed a novel fabrication process of liquid crystal display (LCD) bymeans of slit coater. Paying attention to the shear ﬂow force, weapplied this method to align the ULH with using electric ﬁeld treatment.
Optimum fabrication condition and characteristics of ULH will bedemonstrated.
Invited Development of World’s Largest 60-in. Roll
FLX2/
LCT5 - 3L: Display
9:45
M. Shigeta, M. Kawabata, K. Kobayashi, M. Teragawa

The 60-in. roll display with radius 500 mm has been developed. Noalignment defect due to the displacement of the panel appears for
UV2A mode, and excellent optical performance is conﬁrmed.
As the roll display has the perspective features and texture gradient,
the three dimensional sensation is enhanced by the physiologicaleffects.

69

LCT

Sakai Display Prods., Japan

Friday
FLX2/
LCT5 - 4L
10:10

December 11
Novel Alignment-Process-Free Flexible
VA-LCDs with highly-Stable LC Alignment
M. Yamamoto, K. Asanuma, Y. Iimura
Tokyo Univ. of A&T, Japan

We investigate fabrication processes of high-performance ﬂexible VALCDs. It is shown that using special-shaped pole spacers and a PSS
method gives multi-domain pixel structure with highly-stable LCalignment. A fabricated ﬂexible VA-LCD is highly resistive against
external stresses such as bend deformation.
----- Break -----

Author Interviews and Demonstrations
12:00 – 12:40, Ohmi 6----- Lunch ----13:30 - 15:00

Ohmi 5

LCT6: IPS/FFS Display Modes
Chair:
Co-Chair:T. Ishinabe, Tohoku Univ., Japan
H. Wakemoto, Japan Display, Japan

LCT6 - 1:
13:30

Invited Analysis of Novel IPS Mode for Fast
Response
T. Matsushima, K. Takizawa
Japan Display, JapanWe developed a new fast response time in-plane switching (IPS) LCD
that is three times faster than the optical performance obtainable in theconventional IPS mode. We also proposed an analytical model thatconsiders the elastic energy function under electric ﬁeld stress.
LCT6 - 2:
13:55

Invited Development of Novel LC Compounds and
Mixtures to Improve Transmittance for Np-FFS ModeY. Matsumura, H. Tanaka, T. Maeda, T. Asakura,
E. Machida
JNC Petrochem., JapanTo improve transmittance in FFS mode display with positive dielectricanisotropy (Np) LC mixture, we have designed and synthesized thenovel Np compound (Compound J). The fast response, high reliability
and high transmittance properties compared to the conventional
technology are achieved by use of the LC mixture including Compound J.

70

Friday
LCT6 - 3
14:20

December 11
The Inﬂuence of LC Dielectric Properties on Cell
Transmittance in FFS-LCD
C.-R. Huang, P.-C. Liao, Y.-L. Yeh, Y.-C. Chen, W.-H. Hsu
AU Optronics, Taiwan

The transmittance of fringe-ﬁeld switching (FFS) LCD with positive
liquid crystal is analyzed with different LC dielectric properties. An
index for cell transmittance and a simpliﬁed physical model arepresented.
LCT6 - 4
14:40

Study on Flickering Behavior in Low-Frequency
Driven AH-IPS LC Mode
D.-J. Lee*,**, M.-K. Park**, J.-S. Park**, H. Lee*,
J.-H. Baek*, J.-H. Lee*, H. Choi*, Y. M. Ha*, H.-R. Kim***LG Display, Korea**Kyungpook Nat. Univ., Korea

We investigated the ﬂickering behaviors of AH-IPS LC modes using
positive dielectric LC and negative dielectric LC at the operating
frequency of 0.5 Hz. We found out various origins causing the ﬂickering
phenomena and proposed adequate solutions for each cause.
----- Break ----15:10 - 16:30

Ohmi 5

LCT 7: Innovative Technology for Surface/Interface Control
Chair:
Co-Chair:

K. Ishikawa, Tokyo Inst. of Tech., Japan
Y. Matsumura, JNC Petrochem., Japan

LCT7 - 1:
15:10

Invited Photoalignment Materials for LCDs andFunctional Films
N. Kawatsuki
Univ. of Hyogo, Japan

71

LCT

This paper describes photoresponsive materials for photoalignment ofliquid crystals (LCs) and photoinduced molecular reorientation forfunctional ﬁlms. Axis-selective photoreaction of thin ﬁlms generates
photoinduced small optical anisotropy, which is ampliﬁed to attainmolecular reorientation based on the self-organization due to LC
characteristics of the material.

Friday
LCT7 - 2
15:35

December 11
Electrowetting of Nematic LCs
T. Unate, T. Nagase, H. Naito
Osaka Pref. Univ., Japan

We have studied electrowetting using polar materials of nematic liquid
crystal instead of commonly used non-polar oils. The contact angle ofthe liquid crystal shows larger change in negative applied voltage thanin positive applied voltage. These ﬁndings are expected to increasematerials selections and develop novel devices.
LCT7 - 3
15:55

Reduction of Optical Scattering and Driving Voltageof PDLCs
G.-Y. Shim*, H. G. Kim*, J.-S. Park*, D.-J. Lee*,**,
J.-H. Baek**, J.-H. Lee**, B. K. Kim**, H.-R. Kim*
*Kyungpook Nat. Univ., Korea**LG Display, Korea

A conventional polymer-dispersed liquid crystal using scattered andtransparent light has a difﬁculty realizing a dark state in retardation
layer between crossed polarizers. The PDLC that has the opticallyisotropic LC nanodroplets was fabricated and reduced driving voltagesof the nanodroplet PDLC by doping nanoparticles with high K
properties.
LCT7 - 4L
16:15

Quantitative Characterization of Uniaxial Anisotropyof Rubbed Polyimide Alignment Layer Using
Reﬂection Ellipsometry
M. S. Park, S. M. Yang, S. U. Park*, S. Y. Kim
Ajou Univ., Korea*Ellipso Tech., Korea

The orientational angles and the magnitude of uniaxial anisotropy ofrubbed PI surfaces are quantitatively characterized using an improved
reﬂection ellipsometer.
----- Break -----

Author Interviews and Demonstrations
18:10 – 18:50, Ohmi 672

Thursday

December 10

Workshop on Active Matrix Displays
Thursday, December 10
13:40 - 15:40

Ohmi 6

AMDp1 - 1

AMD

Poster AMDp1: Poster: Oxide TFT
Special Topics of Interest on Oxide-Semiconductor TFT
Stress Durability of CAAC-IGZO TFTs
R. Honda*, H. Baba*, A. Suzuki*, M. Hayakawa**,
N. Ishihara*, H. Kanemura**, Y. Shima**, S. Saito**,S. Matsuda*, K. Dairiki*, J. Koezuka**, S. Yamazaki*,***Semiconductor Energy Lab., Japan**Advanced Film Device, Japan

C-axis-aligned ab-plane-anchored crystalline In-Ga-Zn oxide (CAACIGZO) is a semiconductor material that has attracted attention in recent
years. In this study, drain current stress tests for CAAC-IGZO TFTs
were performed, and the TFTs under the stress were observed using
emission microscopes to indicate hot-carrier effects.
AMDp1 - 2

Correlation Among Crystal Morphology, Surface
Shape, and Oxygen Vacancy Formations in In-Ga-Zn
Oxide
M. Nakashima, T. Hiramatsu, E. Kikuchi, Y. Yamada,
M. Oota, K. Dairiki, S. Yamazaki
Semiconductor Energy Lab., JapanThe crystal orientations and surface shapes of In-Ga-Zn oxide (IGZO)
thin ﬁlms were examined by cross-sectional TEM. Furthermore, thecorrelation between crystallinity and oxygen vacancy was investigatedby ﬁrst-principles calculations. The results reveal that oxygen vacancies
are less likely to be formed in crystalline than in amorphous IGZO.
AMDp1 - 3

Behavior of a-IGZTO TFTs with BCE Structures
Containing Floating Metal Electrodes
M. Ochi, S. Morita, H. Goto, T. Kugimiya, M. Kanamaru*,
M. N. Fujii**, Y. Uraoka**
Kobe Steel, Japan*Kobelco Res. Inst., Japan**NAIST, Japan

We report fabrication of back channel etch type oxide semiconductor
TFTs equipped with ﬂoating metal electrodes on their channel region.
The on-current was greatly enhanced by arranging of the additional
electrodes. It is found that formation of parasitic TFTs also had a similareffect.

73

Thursday

December 10

AMDp1 - 4

Suppression of Photo-Bias Instability of Transparent
Amorphous Indium Oxide Thin Film Transistors byin situ Nitrogen Doping
C.-H. Chang, C.-C. Chang, P.-T. Liu, Y.-C. Tsai*Nat. Chiao Tung Univ., Taiwan*Appl. Materials, Taiwan

In this study, we analyzed the In2O3 thin ﬁlms with different nitrogenﬂow rate during sputtering as the transistorʼs channel layer. The
electrical analysis including deviceʼs reliability and material analysis
were both examined.
AMDp1 - 5

Related a-IGZO Oxide Structure Analysis for
Reliability Improvement
W.-T. Chen, K.-J. Chang, W.-P. Chen, C.-C. Nien,
K.-K. Chen, H.-H. Lu, Y.-H. Lin
AU Optronics, Taiwan

Different device structures stress were studied in this study. Top gate
TFT device showed good PBS/NBS results due to top gate metalshielding and thinner SiOx to avoid gas/moisture permeation into the
IGZO. The dual gate TFT device showed better PBIS/NBIS due to its
nice electric ﬁeld distribution.
AMDp1 - 6

Simple Current-Biased Voltage-Programmed a-IGZO
Pixel Circuit for High-Resolution AMOLED Displays
F.-H. Chen, Y.-T. Liu, C.-M. Lu, C.-L. Lin
Nat. Cheng Kung Univ., Taiwan

A current-biased voltage-programmed amorphous indium-gallium-zincoxide pixel circuit which consists of three transistors and one capacitor
is proposed for the use in high-resolution active-matrix organic lightemitting diode (AMOLED) displays. The simulation results conﬁrm that
the OLED current has immunity to the degradation of driving TFT,
OLED, and carrier mobility.
AMDp1 - 7

Development of High Performance AM-OLED
Display Using IGZO TFT
X.-W. Lv, Y.-H. Meng, C.-Y. Su, W.-H. Li, L.-Q. Shi,
H.-J. Zhang, W. Shi, S.-M. Ge, T. Sun, C.-Y. Lee, A. Lien*
Shenzhen China Star Optoelect. Tech., China*TCL Corporate Res., China

An optimized process of manufacturing IGZO TFT was developed.
According to adjusting pattern sequence of GI, IGZO and ES, transfer
characteristics and uniformity of TFTs were improved. Moreover, muraof panel is reduced greatly. Finally, a high performance 31-in. 4K2K
AM-OLED display was fabricated.

74Thursday
AMDp1 - 8

December 10
Investigation of Stacking Multi-Layers Oxide Thin
Film Transistors Fabricated by Sol-Gel Process
C. Y. Huang, C. E. Tsay, Y. W. WangNat. Changhua Univ. of Education, Taiwan

AMDp1 - 9

High Reliable Indium Gallium Zinc Oxide Thin Film
Transistor under Negative Bias Illumination Stress
J. Liu, J. Li, S. Qin, J. Lee, C. Lee
Shenzhen China Star Optoelect. Tech., China

We studied the inﬂuence of nitrogen plasma treatment on the indium
gallium zinc oxide thin ﬁlm transistor. Then we improved theperformance of indium gallium zinc oxide through adding nitrogen into
the deposition of silicon oxide insulator. Finally, we fabricated highreliable oxide thin ﬁlm transistor under negative bias illumination stress.
AMDp1 - 10 Characteristics Improvements by Adopting MultiActive Layer Structure in a-IGZO Thin Film
Transistors
D. Xu, X. Duan, M. K. Baek, Y. Youn, C. Che, S. Lee
Hefei BOE Optoelect. Tech., China
This paper demonstrates a characteristics improvement method using
multi-active layer structure in a-IGZO TFTs. The multi-active layer
comprises bottom oxygen-rich (OR), middle oxygen-deﬁcient (OD), and
top OR a-IGZO layers, forming carrier-conﬁnement structure. By using
above-mentioned multi-layered IGZO active layer, TFT devices
exhibited relatively better and more stable characteristics was gained.
AMDp1 - 11 Electrical Properties of a-IGZO TFT with Various
Annealing Temperature
Y.-H. Hsieh, M.-C. Chen, S.-Y. Chu
Nat. Cheng Kung Univ., Taiwan
In this paper, we use rf magnetron sputtering method to fabricate
InGaZnO thin-ﬁlm transistors. We use surface energy to identify the
relationship between InGaZnO thin-ﬁlm transistors with various
annealing temperature. We also examine the InGaZnO TFT devices
characteristic and hysteresis.

75

AMD

The effects of multi-stack oxide semiconductor layers on TFT. ZnO
based semiconductors are processed sequentially as active multi-layer
through sol-gel process. Tin/zinc oxide is as the donor provider andgallium/zinc oxide is as the resist layer. The result highest mobility
reaches 6.4 cm2/Vs and on/off current ratio over 105.

Thursday

December 10

AMDp1 - 12 Comparison of Electrical Performance for a-IGZO
Based Single Gate and Dual Gate Driving TFT Using
TCAD
M. M. Billah, M. D. H. Chowdhury, J. Jang
Kyung Hee Univ., Korea
We compared electrical performances between single (SG) and dual
(DG) driving a-IGZO TFTs using TCAD. DG-driving shows higher
electric-ﬁeld 2.59 (2.53) MV/cm and electron concentration 1.04 1019
(1 1019) cm-3 at back (front) channel and thus bulk-accumulation TFT
is possible. Using I-V & C-V measurements DG-driving shows higher
carrier-concentration and lower EC-EF, leads to increase the draincurrent and mobility.
AMDp1 - 13 Withdrawn
AMDp1 - 14 Withdrawn
AMDp1 - 15 Investigation on Ambient Degradation of
Amorphous InGaZnO Thin Film Transistors in an
Unsealed Chamber
J. Xu, Q. Wu, L. Xu, H. Xie, S. Li*, C.-Y. Lee*, A. Lien**,C. DongShanghai Jiao Tong Univ., China*Shenzhen China Star Optoelect. Tech., China**TCL Corporate Res., China

The device transfer characteristics of the unpassivated amorphous
InGaZnO thin ﬁlm Transistors were separately measured underambient N2, Ar, O2, and moisture in an unsealed chamber, proving thatmoisture instead of oxygen, nitrogen, and inert gases was dominant in
the ambient degradation effects under atmospheric conditions.
AMDp1 - 16L Reliability Improvement of Amorphous InGaZnO
Thin-Film Transistors by Less Hydroxyl-Groups
Siloxane Passivation
C. Kulchaisit, Y. Ishikawa, M. N. Fujii, H. Yamazaki,
J. P. S. Bermundo, S. Ishikawa*, T. Miyasako*, H. Katsui*,
K. Tanaka*, K. Hamada*, Y. Uraoka
NAIST, Japan*JSR, Japan
We control the hydroxide content in amorphous InGaZnO surface bypassivation to improve the thin-ﬁlm transistorʼs (TFT) reliability. We
achieved the stable device using an organic-inorganic hybrid material
by controlling the OH bond, and found that the OH amount in thepassivation is a key issue in oxide TFT reliability.

76Thursday

December 10

AMDp1 - 17L The Impact of Thermal-Assist UV/Ozone Treatment
in Amorphous Zinc Oxynitride Thin Film Transistors
K.-C. Ok, H.-J. Jeong, H.-M. Lee, J.-S. Park
Hanyang Univ., Korea

AMDp1 - 18L Inﬂuence of Copper Source/Drain Metal on BCE
Amorphous IGZO TFTs
C.-Y. Hou, L.-Y. Chiu, J.-J. Zeng, S.-F. Wu, S.-C. Lee,
W.-C. TsaiAU Optronics, Taiwan
BCE_structure IGZO TFT using copper as the source/drain metal, we
have developed a copper-blocked process to prevent Cu from diffusing
into the IGZO active layer. The device characteristics and reliability of
Cu BCE_structure IGZO TFT can be improved by copper-blocked
process.
AMDp1 - 19L Improvement of High Mobility Al-Doped InSnZnOBack Channel Etch Thin Film Transistor with
Double-Layered Passivation of SiO2/Al2O3
G.-J. Jeon, K.-H. Lee, H. Yeom, Y. Nam, G. B. Mun,
I.-S. Kang*, S.-H. K. Park
KAIST, Korea*Nat. Nano-Fab Ctr., Korea
N2O plasma treatment was performed to back channel of Al-doped
InSnZnO. TFTs were passivated with SiO2 or SiO2/Al2O3. Whilesubthreshold swing and hysteresis of TFTs with SiO2 single layer weredegraded after post-annealing, TFTs with SiO2/Al2O3 showed muchbetter performance with 0.09 V/decade and 30.55 cm2/Vs.
AMDp1 - 20L Reliability and Performance Study of ZnO CoSputtered InGaZnO Thin Film Transistors Under
Various Ambient Conditions
N. Tiwari, R. N. Chauhan, P.-T. Liu, H.-P. D. ShiehNat. Chiao Tung Univ., Taiwan
ZnO co-sputtered IGZO TFTs were fabricated and systematicallyinvestigated the impact of various annealing environments on theirperformance characteristics. The characteristics were improved in N2
ambient-displaying ﬁeld effect mobility ~ 16.10 cm2/Vs, thresholdvoltage ~ 1.5 V, sub-threshold swing ~ 0.21 V/decade and NBIS shifting~ –2.75 V.

77

AMD

We fabricated high mobility (Msat > 40 cm2/Vs) and stable (ΔVth < 1 V@PBS and NBS for 1hr) amorphous zinc oxynitride thin ﬁlm transistors(a-ZnON TFTs) using thermal assist UV/ozone treatment. The electricalcharacteristics of a-ZnON TFTs were investigated by chemical bonding
properties.

Thursday

December 10

AMDp1 - 21L InZnO Capped with InZnO:Si Bi-Stack Layers forEnhanced Photo-Bias Stability and Performance inMetal Oxide Thin Film Transistors
R. N. Chauhan, N. Tiwari, Y.-H. Tai, P.-T. Liu,
H.-P. D. ShiehNat. Chiao Tung Univ., Taiwan
A thin ﬁlm transistor with bi-stack layers of silicon incorporated InZnO(IZO:Si) on InZnO layer is proposed to enhance device performanceand negative photo-biased stability. The resulting device realizes asenhancement mode (Vth ~ 1.30 V) with mobility of 15.3 cm2/Vs, subthreshold swing of 0.20 V/decade, better stability ~ –0.75 V.
AMDp1 - 22L Oxide TFT Shift Register Circuit with DC-type
Output Driver
S.-J. Song, H. Nam
Kyung Hee Univ., Korea
This paper demonstrates a DC-type oxide TFT shift register thatconnects large size pull-up TFTs to positive supply instead ofalternating clock signals to reduce the power consumption of clock
drivers. The power consumption is simulated as 0.237 mW at a
16-stage gate driver for a 120 Hz full-HD display.
AMDp1 - 23L High Performance Solution Oxide TFTs for AMOLED
Applications
L. Y. Lin, C. C. Cheng, C. Y. Liu, M. F. Chiang, P. H. Wu,
M. T. Lee, C. K. Lo, L. F. Lin, S. H. Kuo
AU Optronics, Taiwan
Solution-processed metal oxide TFT arrays have been fabricated for
AMOLED application in this work. Two different kinds of TFT
conﬁgurations have been introduced; the highest mobility is 4.24 cm2/Vs
for coplanar and 11.37 cm2/Vs for island stop TFT structure.
Characteristics and reliability of solution-processed metal oxide TFTs
have been also presented in this work.
AMDp1 - 24L Comparison of Performance and Stability ofTungsten-doped Indium Oxide Thin Film Transistor
with SiO, SiN and SiO/SiN as Gate Insulators
P.-W. Chen, C.-H. Chang, P.-T. Liu
Nat. Chiao Tung Univ., Taiwan
In this study, we investigated the performance and stability of thin-ﬁlm
transistors with tungsten-doped indium oxide as channel layer, whichwere deposited on SiO, SiN and SiO/SiN. Positive/Negative bias stresswere performed to explore the electrical reliability of IWO TFT withdifferent gate insulators.

78

Thursday

December 10

AMDp1 - 25L High-Mobility and High-Stability ZnON Thin-Film
Transistors for Next-Generation Display
Applications
Y. S. Kim, J. H. Kim, H. S. Kim
Chungnam Nat. Univ., Korea

AMDp1 - 26L Withdrawn
13:40 - 15:40

Ohmi 6

Poster AMDp2: Poster: Active-Matrix Devices
AMDp2 - 1

491-ppi High Resolution a-Si TFT-LCD with High
Transmittance and Slim Border
H. Y. Cheng, P. C. Yeh, H. C. Huang, C. S. Cheng,
W. M. Huang
AU Optronics, Taiwan

Wesuccessfully
demonstratedanovel
5.98-in. WQHD
(1440*RGB*2560) mobile display used a-Si (Amorphous Silicon)
backplane. The demonstration achieves 1.0 mm panel border and over
4% transmittance under 491PPI high resolution display. Compared to
LTPS(Low Temperature Poly-Silicon) backplane, the a-Si structure has
the competitive advantage on fabrication cost and process capability.
AMDp2 - 2

Poly-Si Hall Devices for Magnetic-Field Sensors- Sensitivity Enhancement by High-Voltage
Application M. Kimura, A. Yoshikawa, T. Matsumoto, H. Shiga,
T. Matsuda, T. Ozawa*, K. Aoki*, C.-C Kuo*
Ryukoku Univ., Japan*AU Optronics Japan, JapanWe are developing poly-Si Hall devices for magnetic-ﬁled sensors andsucceeded in sensitivity enhancement by high-voltage. We achieved
the magnetic-ﬁled sensitivity of 5.13 V/T by applying 580 V, 1000 times
higher than the previous sensitivity. This is owing to high carrier-velocity
due to not only high-voltage but high carrier-mobility.

79

AMD

In order to improve the performances of zinc oxynitride thin-ﬁlm
transistors, heat treatment conditions of ZnON semiconductors werestudied here. Thin ﬁlm properties and the resulting TFT performances
including the device stability were evaluated. High-stability ZnON
devices with ultra-high ﬁeld-effect mobility (MFE) values exceeding 50
cm2/Vs were achieved.

Thursday
AMDp2 - 3

December 10
Novel SPC Poly-Si TFTs for AMOLED Application
Y. J. Hsu, R. Kakkad, Y. Li, X. Y. Zhou, X. X. Zhang,
Y. C. Wu, H. Li
Shenzhen China Star Optoelect. Tech., China

We have demonstrated a 5.5-in. AMOLED display using novel SPC
TFT which have signiﬁcantly higher mobility (4-5 times) compared tothose fabricated using conventional SPC poly-Si ﬁlm. The Novel SPC
TFTs are suitable for AMOLED back-plane fabrication due to theirlower crystallization thermal budget and higher performance, andabsence of ELA scanning mura.
AMDp2 - 4

Novel Low-Power Negative Level Shifter for
Negative High Voltage Generators Using LTPS-TFTs
A. Ueda, M. Yoshida
Tokai Univ., Japan

In this paper, we propose a novel low-power level shifter based on lowtemperature polycrystalline silicon thin-ﬁlm transistors (LTPS-TFTs) for
negative high-voltage generators. The proposed level shifter converts
input clock signals whose amplitude switches between 0 and +VDD to
output signals whose amplitude switches between 0 and ­2VDD.
AMDp2 - 5

Novel a-Si:H Gate Driver Circuit with Sharing PullDown Structure
M.-Y. Deng, P.-C. Lai, F.-H. Chen, C.-L. Lin
Nat. Cheng Kung Univ., Taiwan

This work presents a novel gate driver circuit producing two output
signals in one stage and sharing a pull-down circuit to reduce thelayout area. Simulation results demonstrate that the circuit with acdriving method maintains outputs at VL as threshold voltages of input
and pull-down TFTs shift by 10 V.
AMDp2 - 6

Precise Simulation of Brightness Variation on Whole
AMOLED Panel Caused by Power Line Voltage Drop
C.-H. Shim, C. Tsukii, S.-K. Kim, R. Hattori, T. Munakata*
Kyushu Univ., Japan*Jedat, JapanA precise simulation method to evaluate the brightness variation acrossan entire AMOLED panel with actual pixel numbers caused by powerline voltage drop is presented. The voltage drop is evaluated for fourtypes of simpliﬁed compensated pixel circuits which cover all of the
AMOLED pixel circuits.

80Thursday

December 10

AMDp2 - 7

Amorphous Silicon Integrated Memory Pixel Circuitwith Low Power Consumption in TFT-LCD
Application
G.-Y. Zheng, P.-T. Liu*, C.-Y. Tsai*, Y.-F. Tu*
Nat. Tsing Hua Univ., Taiwan*Nat. Chiao-Tung Univ., Taiwan

AMDp2 - 8

New AMOLED Pixel Circuit with ResolutionIndependent VTH Compensation Capability
C.-E. Lee, Y.-T. Liu, P.-S. Chen, C.-L. Lin
Nat. Cheng Kung Univ., Taiwan

This work proposes a new active-matrix organic light-emitting diode(AMOLED) pixel circuit composed of ﬁve TFTs and two capacitors. The
proposed pixel circuit can compensate for the VTH variations of thedriving TFT and the compensation capability can be unaffected by the
resolution of displays through using parallel addressing scheme.
AMDp2 - 9

Electrical Characteristics of Two-Step Gate Insulator
Deposition on Low-Temperature Poly-Si TFTs
Y.-S. Cho, W.-H. Son, Y.-K. Lee, H.-S. Lee, K.-H. Moon,
W. -S. Son
LG Display, Korea

The gate insulator deposited at higher RF power induced higher
plasma damage on the surface of active layer. It also can create
additional defects, more especially at the Si/SiO2 interface due to SiO2
grow mechanism. Thus, we attempted two-step gate insulator
deposition method to conﬁrm the effect of SiO2 interface
characteristics.
AMDp2 - 10L Self-Aligned Planar Metal Double-Gate Junctionless
P-Channel Low-Temperature Poly-Ge TFTs with
High-K Gate Dielectric on Glass Substrate
Y. Nishimura, T. Nakashima, A. Hara
Tohoku Gakuin Univ., JapanWe demonstrate for the ﬁrst time a self-aligned planar metal doublegate junctionless (JL) p-ch low-temperature (LT) poly-Ge TFT on a
glass substrate with a high-k gate dielectric that showed superior
performance compared to top-gate JL p-ch LT poly-Ge TFTs.

81

AMD

This paper presents integrated amorphous silicon thin ﬁlm transistor (aSi) memory pixel circuit which is composed of one N-type inverter blockand coupling capacitor to achieve one second holding voltage for
reducing the frequency to 1 Hz of data driver in static mode.

Thursday

December 10

AMDp2 - 11L Research on Low-power Digital Driver AMOLED
Display
H. Zhu, S. Hu, N. Yang, X. Gao, X. Huang
Kunshan New Flat Panel Display Tech. Ctr., China
We propose a digital driving technique using a novel 2T0C pixel circuit
and a high speed analog shift register for an active-matrix organic lightemitting diode (AMOLED) to effectively reduce power consumption. A
2.8-in. QVGA AMOLED system using the proposed technique showshigh image quality while allowing small power consumption.
AMDp2 - 12L A New LTPS Pixel Compensation Circuit for
AMOLED Display
S. Hu, H. Zhu, N. Yang, T. Zhang, Z. Wang, X. Gao,
X. Huang
Kunshan New Flat Panel Display Tech. Ctr., China
An AMOLED pixel circuit is proposed for improving the image quality ofthe display, which can compensate the threshold voltage variation and
VDD IR drop. Simulation results showed that the current variation
through OLED decreased to 10% comparing with the conventional
pixel.
----- Break ----16:00 - 17:25

Ohmi 1AMD1: Oxide TFT: Crystalline Oxide
Special Topics of Interest on Oxide-Semiconductor TFT
Chair:
Co-Chair:

H. Kumomi, Tokyo Inst. of Tech., Japan
M. Hiramatsu, Japan Display, Japan

AMD1 - 1:
16:00

Invited CAAC-Oxide Semiconductor Material and Its
Applications
M. Tsubuku, S. Yamazaki
Semiconductor Energy Lab., Japan

C-axis-aligned a-b-plane-anchored crystal indium- gallium-zinc-oxide(CAAC-IGZO) has unique characteristics with a layered crystal
structure. We found that the IGZO with new atomic ratios of In:Ga:Zn =4:2:3 to 4:2:4.1 and its neighborhood also has the layered CAAC
structure and the electrical characteristics is improved in mobility andreliability.
AMD1 - 2:
16:25

Invited Change in Structure and TFT Performancesof IZO, IGO and IGZO Films by Crystallization
A. Suko, J. Jia, S. Nakamura, Y. Shigesato
Aoyama Gakuin Univ., Japan

How the a-IGZO ﬁlms crystallize and how the crystallinity affects theelectrical properties, hence the TFT performances, have been
investigated in detail. HREM analyses revealed the crystallization
behavior in detail. For the comparative purpose the crystallization
behaviors of a-IGO and a-IZO ﬁlms are also investigated.
82Thursday
AMD1 - 3
16:50

December 10
Improvement in Characteristics, Reliability and
Dispersion of CAAC-IGZO FETs with Surrounded
Channel Structure
M. Hayakawa*, S. Matsuda**, S. Saito*, Y. Shima*,
D. Matsubayashi**, M. Dobashi*, K. Tsutsui**, R. Honda**,J. Koezuka*, K. Okazaki*, S. Yamazaki*,**

Crystalline In-Ga-Zn-O (IGZO) ﬁeld-effect transistors (FETs) with theirchannels electrically surrounded by two gate electrodes on the top sideand the bottom side (we refer to such a structure as “surroundedchannel (S-ch) structure”) were fabricated. Characteristics, reliability
and dispersion of crystalline IGZO FETs were improved due to theirS-ch structure.
AMD1 - 4L
17:10

Double-Channel InZnO/AlSnZnInO Thin-Film
Transistors with Ultra High Mobility
J. H. Choi, J.-H. Yang, S. Nam, H.-O. Kim, O-S. Kwon,
E.-S. Park, C.-S. Hwang, S. H. Cho
ETRI, Korea

We report high performance double-channel InZnO/AlSnZnInO thinﬁlm transistors with inverted staggered back channel etch structure.
The ﬁeld-effect mobility, Subthreshold slope, turn-on voltage, and on/off
ratio were 51.2 cm2/Vs, 0.15V/decade, –1.6V, and 3 109, respectively.
----- Break -----

IDW ’15 Tutorial in Japanese
Organized by SID Japan Chapter
Tuesday, Dec. 8, 2015
12:50 – 17:50
Ohmi 10 (2F)
Otsu Prince Hotel
Detailed information is available on
http://www.sid-japan.org/
83

AMD*Advanced Film Device, Japan**Semiconductor Energy Lab., JapanThursday

December 10

17:40 - 19:10

Ohmi 1AMD2: High Resolution Displays Using LTPS and Oxide TFTs
Special Topics of Interest on Oxide-Semiconductor TFT
Chair:
Co-Chair:P. Heremans, imec, Belgium
H. Hamada, Kinki Univ., Japan

AMD2 - 1:
17:40

Invited 2K4K 550-ppi In-Cell Touch LTPS TFT-LCD
M. Tada, T. Nakamura, H. Kimura
Japan Display, Japan

2K4K 550-ppi in-cell touch LTPS TFT-LCD has been developed inwhich low power consumption is realized using RGBW pixel, local
dimming and low frame-rate driving. This LCD can be driven in 30 Hz
frame-rate by the advanced TFT process with narrower channel width
and thinner insulator storage capacitance.
AMD2 - 2

Withdrawn

AMD2 - 5L
18:05

Scalability Characteristics of Self-Aligned Top-Gate
IGZO TFTs
J. S. Seo, J. Noh, P. S. Yun, J. U. Bae, K.-S. Park,I. B. Kang
LG Display, Korea

To achieve the short-channel scalability characteristics of self-aligned
IGZO TFTs we perform to control the diffusion region (ΔL, LDD) inside
channel and to reduce the total resistivity of S/D extension region. As aresult of this work, we realize the below L < 4 Mm TFTs and improve its
current driving ability.
AMD2 - 3
18:25

Development of 32-in. 8K4K LCD with Oxide
Semiconductor and GOA Technology
M. Wang, Y. Zhao, Q.-M. Gan, F. Zhao, C.-K. Zhang,
L.-Q. Shi, L.-M. Zeng, C. Dai, T. Lee, H-L. Hu, J. Wu,
C.-Y. Chiu, C.-Y. Lee, A. Lien*
Shenzhen China Star Optoelect. Tech., China*TCL Corporate Res., China

We have successfully developed a 32-in. 8K4K LCD prototype which
has the highest pixel density (280PPI) in TV market. BCE type oxide
semiconductor and photo- alignment FFS mode are used to gain
enough aperture ratio. HSD method and GOA technology are also
used to decrease COF quantity.

84

Thu. / Fri.
AMD2 - 4:
18:45

December 10 / 11
Invited Over 800-ppi Liquid Crystal Display withHigh Aperture Ratio Using IGZO Platform
S. Uchida, N. Ueda, K. Okada, A. Oda, K. Yamamoto,K. Yamamoto, N. Noguchi, T. Matsuo
Sharp, Japan

Author Interviews and Demonstrations
19:00 – 19:40, Ohmi 6

Friday, December 11
9:00 - 10:30

Ohmi 1AMD3: Oxide TFT: Reliability
Special Topics of Interest on Oxide-Semiconductor TFT
Chair:
Co-Chair:Y. Yamamoto, Japan
K. Takatori, NLT Techs., Japan

AMD3 - 1:
9:00

Invited Reliability of Oxide TFTs
B. S. Bae, S. M. Shin, K. M. Yu, E.-J. Yun
Hoseo Univ., Korea

The negative shift of threshold voltage by light illumination wasinvestigated for the oxide thin ﬁlm transistor. By the light illumination,
both the doubly ionized oxygen vacancy and charge trapping cause thenegative shift of the threshold voltage.
AMD3 - 2:
9:25

Invited Highly Reliable Oxide Thin Film Transistors
for Flexible Devices
Y. Uraoka, J. P. S. Bermundo, M. Fujii, Y. Ishikawa
NAIST, Japan

Oxide TFT were investigated for ﬂexible display. Fluorinated SiN gateinsulator greatly improved reliability of oxide TFT under bias stress.
Excimer laser annealing was performed for the TFT with siloxane
passivation for low temperature annealing. Amorphous InZnO was
fabricated by spin-coating method and Ag paste was patterned byscreen print.

85

AMD

Using oxide semiconductor, we have developed a 806ppi (4K2K) LCD
which pixel density reach 4K resolution smart-phone and HeadMounted-Display (HMD). An excellent aperture ratio was achieved withpatterning dimensions by a gh-line lithography manufacturing
backplane. With i-line lithography, this technology can realize larger
pixel density than 1000ppi which satisfy HMD demands.

Friday
AMD3 - 3
9:50

December 11
Electrical Characteristics and Stability of Bottom
Gate a-InGaZnO TFTs on Flexible Substrate
H.-W. Li, C.-F. Yang, C.-P. Chang, C.-H. Tsai, H.-H. Lu
AU Optronics, Taiwan

The bottom gate a-IGZO TFTs with different buffer layers fabricated on
PI substrate was investigated. The devices characteristics would not beaffected by buffer layers, while applying the plasma treatment on PI
substrate. Devices show a good performance, and the thresholdvoltage shift is less than 1 V under bias stress.
AMD3 - 4
10:10

Novel BTS Model and Methodology for AC-StressInduced Long-Term Reliability in Thin-Film
Transistors
J. Jang, K. Jeon, J. Yang, J. Park, M. Seo, Y. Yoon,
K. Kim, K. Jung, Y. Kim, M. Yoo
Samsung Display, Korea

A novel BTS (Bias-Temperature-Stress) model and methodology forpredicting threshold voltage shifts (ΔVTH) under AC stress is ﬁrstly
proposed. In order to verify this model, TFTs of the amorphous silicongate driver integrated in a LCD panel were measured, and the
proposed model has ΔVTH error rate of 11.7% on average.
----- Break ----10:40 - 11:55

Ohmi 1

AMD4: TFT Fabrication Technologies
Special Topics of Interest on Oxide-Semiconductor TFT
Chair:
Co-Chair:H. Minemawari, AIST, JapanY. Fujisaki, NHK, Japan

AMD4 - 1:
10:40

Invited Organic Blend Semiconductors for High
Performance Thin-Film Transistor Applications
T. D. Anthopoulos, J. Smith, S. Hunter
Imperial College London, UK

We report the development of p-channel organic small-molecule/polymer blend-based thin-ﬁlm transistors with high hole mobility.
Emphasis is placed on the use of molecular p-dopants as a mean to
improve the transistorsʼ operating characteristics as well as theoperating frequency of integrated circuits such as multi-stage ringoscillators.

86Friday
AMD4 - 2
11:05

December 11
Development of All Solution Processed TFT in ESL
Conﬁguration
M. Marinkovic, S. Bom*, T. Balster*, K. Su, A. Merkulov,
V. Wagner*, R. Anselmann
Evonik Inds., Germany*Jacobs Univ. Bremen, Germany

AMD4 - 3L
11:25

KrF Excimer Laser Annealing of a-InGaZnO ThinFilm Transistors with Solution Processed Hybrid
Passivation Layers
J. P. S. Bermundo, Y. Ishikawa, M. N. Fujii, T. Nonaka*,
H. Ikenoue**, Y. Uraoka
NAIST, Japan*Merck, Japan**Kyushu Univ., Japan

We show how KrF excimer laser annealing (ELA) can be used as a lowtemperature annealing process to improve the properties of passivatedamorphous InGaZnO thin-ﬁlm transistors. We analyzed the effect of
KrF ELA on the electrical properties, physical structure, chemicalbonding and composition of a-InGaZnO.
AMD4 - 4L
11:40

High Performance and Uniformity of Poly-Si ThinFilm Transistors using Solid-Phase Crystallization
on YSZ Layers by Two-step PLA Method
L. T. K. Mai, S. Horita
JAIST, Japan

Poly-Si TFTs were fabricated by two-step PLA method on two kinds ofsubstrates, glass and YSZ/glass. TFTs on YSZ/glass show much better
performance and uniformity of device-to-device, e.g., average mobility~80 cm2/Vs and its standard deviation ~18 cm2/Vs, respectively,
compared with ~40 cm2/Vs and ~28 cm2/Vs on glass, respectively.
Author Interviews and Demonstrations
12:00 – 12:40, Ohmi 6----- Lunch -----

87

AMD

Liquid-phase processed metal oxide and directly patternable etch-stop
materials were successfully integrated in TFTs with ESL conﬁguration.
Fabricated devices exhibit the mobility of 14 cm²/Vs, the negligible
contact resistance and good electrical stability. The up-scaling
feasibility of process to large substrates and integration in high-end
display devices will be presented.

Friday

December 11

13:30 - 15:00

Ohmi 1

AMD5: Oxide TFT: Applications
Special Topics of Interest on Oxide-Semiconductor TFT
Chair:
Co-Chair:Y. Uraoka, NAIST, Japan
M. Inoue, Huawei Techs., Japan

AMD5 - 1:
13:30

Invited Properties of Oxide-Semiconductor TFTs
under Mechanical Strain for Flexible Electronics
P. Heremans*,***, A. de Jamblinne de Meux*,***,
B. Hou**, A. Tripathi***imec, Belgium**Holst Ctr., the Netherlands***Univ. of Leuven, Belgium

We report on the mechanical properties of a-IGZO transistors. We ﬁndthat the charge carrier mobility of a-IGZO transistors is remarkably
independent of strain. We explain these experimental results by abinitio modeling of amorphous IGZO semiconductor material. We
compare a-IGZO to covalent semiconductors, a-Si and LTPS, and toorganic transistors.
AMD5 - 2:
13:55

Invited Novel Technologies for Source and Drain
Resistance Reduction in Short-Channel SelfAligned InGaZnO Thin-Film Transistors
K. Sakuma, K. Ota, T. Irisawa, C. Tanaka, K. Ikeda,
D. Matsushita, M. Saitoh
Toshiba, Japan

We have successfully demonstrated a low-resistance source and drain(S/D) region of InGaZnO-TFT using Ar ion implantation (Ar I/I) and selfaligned metallization processes. These silicon-compatible technologies
are very promising for high performance and high density InGaZnO
TFT as BEOL Tr. in 3D LSIs.
AMD5 - 3
14:20

Advanced Compensation Technologies for LargeSize UHD OLED TVs
S. Takasugi, H.-J. Shin, M.-K. Chang, S.-M. Ko,
H.-J. Park, J.-P. Lee, H.-S. Kim, C.-H. Oh
LG Display, Korea

In this paper, we present novel OLED display panel compensation
technologies for large-size UHD OLED TVs considering variations ofthreshold voltage, mobility, channel size, OLED efﬁciency, and OLED
uniformity. Using these technologies, we have successfully launched
55-, 65- and 77-in. UHD OLED TVs.

88

Friday
AMD5 - 4
14:40

December 11
Dual-Gate Self-Aligned a-IGZO TFTs Using 5-Mask
Steps
M. Nag*,**, F. De Roose*,**, A. Bhoolokam*,**, K. Myny*,
A. Kumar***, S. Steudel*, J. Genoe*,**, W. Dehaene**,G. Groeseneken*,**, P. Heremans*,**,***We report a dual-gate (DG) self-aligned (SA) a-IGZO TFT process thatcomprises only ﬁve mask steps. The top-gate (TG) is SA which enableshigh speed operation. The secondary bottom-gate (BG) enables toimprove parameters such as on-current (ION) and the sub-thresholdslope (SS-1) substantially when both gates are connected together.
----- Break ----15:10 - 16:35

Ohmi 1

AMD6: Oxide TFT: Solution Processes
Special Topics of Interest on Oxide-Semiconductor TFT
Chair:
Co-Chair:T. D. Anthopoulos, Imperial College London, UK
H. Kumomi, Tokyo Inst. of Tech., Japan

AMD6 - 1:
15:10

Invited Oxide-Channel Ferroelectric-Gate Thin Film
Transistors Prepared by Solution Process
E. Tokumitsu, T. Shimoda
JAIST, Japan

Features of oxide-channel ferroelectric-gate thin ﬁlm transistors (FGTs)
are presented at ﬁrst. Next, some recent topics, solution process andnew printing process for TFT fabrications are presented. In particular,
we demonstrate sub-micron channel FGTs fabricated by solution
process with newly developed nano-rheology printing (n-RP) without
using conventional lithography.
AMD6 - 2:
15:35

Invited Stable Metal Semiconductor Field EffectTransistors on Oxide Semiconductor Channels
Grown via Mist-CVD
G. T. Dang, T. Kawaharamura*, M. Furuta*, S. Saxena,
M. W. Allen
Univ. of Canterbury, New Zealand*Kochi Univ. of Tech., JapanWe demonstrate the successful production of transparent metalsemiconductor ﬁeld-effect-transistors (MESFETs), using reactivelysputtered silver oxide Schottky gates on In-Ga-Zn-O, Zn-Sn-O, SnO2,
and Ga2O3 channels, grown by non-vacuum, solution-processed Mist
Chemical Vapor Deposition (Mist-CVD). We examine the performanceand stability of these devices and discuss their suitability for display
applications.

89

AMD

*imec, Belgium**Katholieke Univ. Leuven, Belgium***Holst Ctr., the Netherlands

Friday
AMD6 - 3
16:00

December 11
Highly Reliable All-Printed Oxide TFT of High
Work-Function Metal Electrodes with Low Contact
Resistance by Doped Oxide Semiconductor
Y. Hirano, S. Matsumoto, R. Saotome, Y. Sone, S. Arae,
M. Kusayanagi, Y. Nakamura, N. Ueda, K. Yamada
Ricoh, Japan

We have developed all-printed TFT with high work-function metalelectrodes and novel oxide semiconductor in which carriers are
generated by doping technique to make good contact with theelectrodes. The TFT after forming planarization layer exhibited highmobility around 10 cm2/Vs and high reliability against bias-temperaturestress and illumination tests.
AMD6 - 4L
16:20

Self-Aligned Top-Gate InGaZnO Thin-Film Transistor
Fabricated at 150°C Using Coatable Organic
Insulator
T. Toda, Y. Magari, M. Furuta
Kochi Univ. of Tech., Japan

We fabricated self-aligned, top-gate InGaZnO thin-ﬁlm transistors(IGZO TFTs) with a coatable organic insulator, Zeocoat, at a maximum
process temperature of 150 C. The IGZO TFT with a channel protection
layer showed good switching properties; saturation mobility: 10.7 cm2/Vs,
subthreshold swing: 0.19 V/dec., and hysteresis: 0.2 V.
----- Break ----16:50 - 18:25

Ohmi 1

AMD7: Advanced Si Technologies
Chair:
Co-Chair:B. S. Bae, Hoseo Univ., Korea
T. Noguchi, Univ. of the Ryukyus, Japan

AMD7 - 1:
16:50

Invited Solution-Processed LTPS on Paper
R. Ishihara*,**, M. Trifunovic*, P. Sberna*, T. Shimoda***Delft Univ. of Tech., the Netherlands**JAIST, Japan

We introduce a novel method that allows polysilicon formation on paper
directly from the liquid-silicon ink. Using this method, polysilicon TFTs
were created at a maximum temperature of only 150 C. This method
allows printing of silicon devices on inexpensive, temperature sensitive
substrates such as PET, PEN or paper.

90

Friday
AMD7 - 2:
17:15

December 11
Invited Prospect of Low-Temperature Poly-Si, PolySiGe, Poly-Ge TFTs on Glass Substrate
A. Hara, T. Meguro, Y. Nishimura, S. Nibe, H. Ohsawa
Tohoku Gakuin Univ., Japan

AMD7 - 3:
17:40

Invited Smart Pixel TFT Circuits for High Image
Quality AMOLED Displays
O.-K. Kwon, K. Oh, N.-H. Keum
Hanyang Univ., Korea

We brieﬂy review previously reported smart AMOLED pixel circuits
using LTPS TFTs. Moreover, recent trend and state-of-the-art smart
pixel TFT circuits are discussed.
AMD7 - 4
18:05

Appearance of p-Channel TFT Performance with
Metal Source-Drain Using BLDA Aiming for LowCost CMOS
T. Ashitomi, T. Harada, K. Shimoda, T. Okada,T. Noguchi, O. Nishikata*, A. Ota*, K. Saito*
Univ. of the Ryukyus, Japan*ULVAC, Japanp-type top-gate TFT was fabricated with low temperature process
below 490 C using BLDA without adopting ion-implantation. In place of
impurity doping, Au was used for source-drain region. Afterhydrogenation, the formed TFT showed typical p-type Vg-Id
characteristics.
Author Interviews and Demonstrations
18:10 – 18:50, Ohmi 6
Supporting Organizations:Technical Committee on Electronic Information Displays, Electronics
Society, IEICE
Thin Film Materials & Devices Meeting

91

AMD

Now a day, mainstream of high on-current TFTs are oxide TFTs.
However, polycrystalline group-IV TFTs are also attractive as system
on panel due to capability of integration of CMOS circuit. In this paper,
feasibility of low-temperature poly-Si, -SiGe, -Ge TFTs will be
discussed based on our experimental data.

Thursday

December 10

Workshop on FPD Manufacturing,
Materials and Components
Thursday, December 10
10:30 - 12:30

Ohmi 6

Poster FMCp1: Materials and Components
FMCp1 - 1

Microstructure, Electric Properties and Chemical
Bonds of Lead-Free Piezoelectric Thin Films
C.-W. Su, C.-C. Chen, S.-Y. Chu, C.-C. Tsai*,C.-H. Hung**Nat. Cheng Kung Univ., Taiwan*Tung Fang Design Univ., Taiwan**Nat. Kaohsiung Normal Univ., Taiwan

The lead-free non-stoichiometric piezoelectric (Na0.5K0.5)NbO3 ﬁlms andlithium dopants Lix(Na0.5K0.5)1-xNbO3 were fabricated by sol-gel
processing on Pt(111)/TiO2/SiO2/Si(100) substrates. The effects oflithium doping on the microstructures and electrical properties of thesamples were investigated. Finally, we found the remnant polarizationand piezoelectric coefﬁcient were improved effectively through doping
lithium.
FMCp1 - 2

High Energy Density for Energy Harvesting Devicesof (Ba0.98Ca0.02)(Ti0.94Sn0.06)O3 Piezoelectric Ceramics
Fabricated by SiO2 Modiﬁed
Z.-Y. Chen, C.-C. Tsai*, C.-S. Hong**, S.-Y. Chu,
W.-H. Chao, H.-H. Hsieh*Nat. Cheng Kung Univ., Taiwan*Tung Fang Design Inst., Taiwan**Nat. Kaohsiung Normal Univ., Taiwan

The development of lead-free material system becomes the current
trend for replacing the lead-based ones. This project aims to explore
the (Ba0.98Ca0.02)(Ti0.94Sn0.06)O3 doped x mol% SiO2 (BCTS-xSi)
materials system. This piezoelectric ceramic compound is a new test
that with high energy density and to achieve the drive LED light.
FMCp1 - 3

Recrystallization of Single Crystal 6,13-bis(triisopropylsilylethynyl)pentacene within LC
H.-B. Park, H.-T. Jang, J.-H. Kim, C.-J. Yu
Hanyang Univ., Korea

We investigate the recrystallization of 6,13-Bis(triisopropylsilylethynyl)(TIPS) pentacene within liquid crystal. Single crystalline structure of the
TIPS pentacene was grown up to a few hundred micro-meters withinliquid crystal as a solvent. The large anisotropy of the single crystalline
TIPS pentacene ﬂake also was observed.

92

Thursday
FMCp1 - 4

December 10
Characterization of Two Dimensional MoS2
Produced by RF-Sputtering and Thermal
Evaporation Methods
Y. J. Kim, T. K. Park, H.-N. Lee
Soonchunhyang Univ., Korea

We fabricated two dimensional (2D) MoS2 thin-ﬁlm using sputtering andthermal evaporation methods. Dependence of the MoS2 thin-ﬁlm
characteristics on the deposition method and after-deposition heat
treatment conditions was examined. Using the MoS2 active layers, 2D
thin-ﬁlm transistors are being developed.
FMCp1 - 5

Slicing and Halftoning Algorithm for High Quality
Color 3D Printing

FMC

C.-I. Lin, Y.-P. Sie, T.-H. Lin, P.-L. Sun
Nat. Taiwan Univ. of S&T, Taiwan
This paper focuses on color reproduction for light-curable type 3Dprinting technology. We proposed a volumetric slicing method withhalftoning algorithm to simultaneously convert the color of 3D models
into printable layers. The experimental result shows our method is able
to improve the color quality, particularly for light-curable 3D printing.
FMCp1 - 6L SrTiO3 Modiﬁed Lead-Free Ceramics Materials forEnergy Harvesting Applications
H.-H. Su, C.-S. Hong*, C.-C. Tsai**, S.-Y. Chu
Nat. Cheng Kung Univ., Taiwan*Nat. Kaohsiung Normal Univ., Taiwan**Tung Fang Design Inst., Taiwan
In this study, composition of potassium sodium niobate based ceramics
were synthesized by the conventional solid-state reaction process. The
phase formation and microstructures using X-ray diffraction andscanning electron microscope. When x = 0.003 had the best electricalproperty of kp = 45% and d33 = 245 pC/N.
FMCp1 - 7L Disk-Type Piezoelectric Transformer of the CuF2Doped Potassium Sodium Niobate Lead-Free
Ceramics for Driving LED Bar
C.-M. Weng, S.-Y. Chu, C.-C. Tsai*, C.-S. Hong**Nat. Cheng Kung Univ., Taiwan*Tung Fang Design Inst., Taiwan**Nat. Kaohsiung Normal Univ., Taiwan
In this paper, the development of (Na0.5K0.5)NbO3 + xCuF2 (NKNCFx, x =0 - 3.5 mol%) ceramics were investigated. The best piezoelectric
properties of NKCFx ceramics with kp = 48%, Qm = 2331 were obtained
at x = 1.5. Furthermore, disk-type transformers have been developed
for driving LED bar using proposed ceramics.

93

Thursday

December 10

FMCp1 - 8L Large-Area Uniform Film Formation and Optical
Anisotropy of Soluble Organic Semiconductor
Single Crystals in Liquid Crystal Solutions
T. Matsuzaki, T. Ishinabe, H. Fujikake
Tohoku Univ., JapanTo achieve organic TFTs with high mobility, we examined large-area
uniform-thickness orientation-controlled ﬁlm formation of organic
semiconductor single crystals by liquid crystal solvents. We clariﬁed
800 nm-thick crystal ﬁlms (maximum length: over 10 mm) have opticalslow axes and stronger ultraviolet absorption axes perpendicular to
rubbing direction of substrates.
10:30 - 12:30

Ohmi 6

Poster FMCp2: Display Optics and Information Technologies
FMCp2 - 1

Emiﬂective Display with High Brightness
Characteristics
D.-M. Lee, S. I. Jo, Y.-J. Lee, J. H. Han, C.-J. Yu,
J.-H. Kim
Hanyang Univ., Korea

We propose a high brightness emiﬂective display operated in a whole
pixel conﬁguration consisting of the OLED and TN LC cell which areused for backlight and reﬂector, and switching device, respectively.
Emission and reﬂection mode acts simultaneously under dim
environment without any optical path difference giving higher
brightness characteristics.
FMCp2 - 2

The Effect Phosphor-Gel Concentrations on the
Extraction Light of White Light Emitting Diode
T.-S. Zhan, C.-H. Chiang, K.-C. Cheng, S.-Y. Chu
Nat. Cheng Kung Univ., Taiwan

In this article, the characteristics of extraction light of conventionally
packaged white LEDs with different phosphor-gel concentrations were
investigated. To dismiss the affections of other parameters as much as
possible, all the samples were adjusted to have identical CIE
coordinates, color temperature and curvature.
FMCp2 - 3

Improved Lumens per Watt Efﬁciency of LED Using
Light Recycling Technology for Lighting
Applications
K. Li
Wavien, USA

A standard white LED made from a blue LED coated with a yellow
phosphor layer has lower efﬁciency at lower color temperature. This
paper discloses the use of the recycling light technology for making low
color temperature LEDs such that the lumens/watt efﬁciency is higher.

94Thursday

December 10

FMCp2 - 4L The Design of Emit Structures for Hot Spot Free
with All Kinds of Patterns in LGP
Y. W. Chang, S. Liao, S. Y. TsaiAU Optronics, Taiwan
We successfully develop a kind of emit structure named TAPS which
could enhance BLU emitting efﬁciency >4% and improve LCM picture
quality simultaneously without any side effects. TAPS is speciallyeffective with bottom vcut pattern design, and could reduce hot spot
area from 6 mm to 2 mm (300% improved).
10:30 - 12:30

Ohmi 6

FMCp3 - 1

FMC

Poster FMCp3: Manufacturing Technologies
Issues and Developments of 1.2 μm Resolution
Technologies for FPD Mass-Production
N. Yabu, N. Izumi, Y. Nagai, T. Ooyanagi, M. Ando,
K. Nagano
Canon, Japan
Although DUV is effective to obtain high resolution and large DOF,
there are still some issues for FPD mass-production, such as CD
difference between inner- and outer-lines for line & space pattern andhigh dose for contact hole. We investigate these issues by simulations
and exposure tests.
FMCp3 - 2

Design Consideration on Optical Fiber Layout for
Laser Backlight Applications
T. Kojima, T. Zanka, I. Fujieda
Ritsumeikan Univ., JapanFor a backlight unit based on a curved optical ﬁber, how the opticalpower is distributed inside a light-guide is mainly determined by its
layout design. In experiment, we show that uniformity of light extraction
is improved by positioning curved portions at four quadrants in asquare light-guide.
FMCp3 - 3Fabrication of Quasi-Black Mask for LCDs by
Selective Coating Technique Using an Electro-Spray
Deposition Method
Y. Kudoh, Y. Uchida, T. Takahashi
Kogakuin Univ., Japan

A novel technique to fabricate a quasi-black mask (q-BM) has been
proposed; the q-BM was composed by the vertical and the hybridorientation areas, which patterned by separation coating techniqueusing an electro-spray deposition method. That can be formed easily
without additional masks for the BM by using our technique.

95

Thursday
FMCp3 - 4

December 10
Cell Slimming for Curved Display to EnhanceStrength
S. M. Huang, J. K. Lu, C. -H. Liao, H. K. Chang,
W. C. Wang, S. K. Lin
AU Optronics, Taiwan

Curved display is an extending application of the glass substrate. Ideal
glass material can withstand a certain bending stress and forming acurvature, but defects of glass surface from process reduce bending
degree. In this researching, we study and recommend a improving cellslimming process for enhance strength of panel.
FMCp3 - 5

Research on Effect of the Multi Factors to Improve
via Etch Uniformity and ProﬁleX. Chang, Z. Cao*, Z. Wang, C. Gao, J. Gao*, W. Deng,
B. Zhang, J. Lv, Y. Choi
Chongqing BOE Optoelect., China*BOE Tech. Group, China

In this paper, the effect of factors to Via etch uniformity and proﬁle wereresearched at ICP etcher on G8.5 substrate. we ﬁnd the best conditionof Via etch can be got only using about ten sheet glasses, which is
helpful for the application in other process development andoptimization.
10:30 - 12:30

Ohmi 6

Poster FMCp4: Film Technologies
FMCp4 - 1

Darkness Colorimetry of VA-LCDs : Factors andPerformance
L.-X. Chen, C.-T. Kang, C. Ning
Shenzhen China Star Optoelect. Tech., China

Color of dark status of VA-LCDs has been studied. It is found that thepolarizer and color ﬁlter as well as voltage settings of 0 gray andbacklight unit inﬂuence the result. This paper also illustrates themechanism of these factors and gives some design suggestion.
FMCp4 - 2

Growth of C8-BTBT Films during Drop-Castingunder an External Temperature Gradient
N. Iizuka, T. Zanka, Y. Onishi, I. Fujieda
Ritsumeikan Univ., Japan

We generated a temperature gradient in a substrate by heat stages
and drop-casted a C8-BTBT solution on it. The growth direction of thethin ﬁlm was initially along this external temperature gradient and it was
reversed later. An AFM image conﬁrmed 3nm-steps on the ﬁlm region
formed earlier.

96

Thursday
FMCp4 - 3

December 10
Viewing Angle Control Device Based on Array of
Optical Micro-Rods with High Aspect Ratio
K. Shiota, M. Okamoto, H. Tanabe
NLT Techs., Japan

We have successfully demonstrated a multi-axial viewing angle control
ﬁlm that ensures privacy from prying eyes from all directions. It consistsof a light-transmitting portion formed using optical micro-rods with ahigh aspect-ratio and a shielding portion formed of cross stripes. The
viewing angle can be controlled to within +/­30.
FMCp4 - 4L Diffusion Angle Control of Light Diffusing Films
Having Alternative Polymer Layer Structure

FMC

S. Seo, M. Nishizawa, T. Ishinabe, H. Fujikake
Tohoku Univ., Japan
We focused on the light diffusing ﬁlm having alternative polymer layer
structure, and investigated the effects of ultraviolet illuminance andcombination ratio of monomers on the layer structure and light diffusion
property to control diffusion angle range. Moreover, we proposed anovel evaluation method using reﬂected light from layer structure.
----- Lunch ----16:00 - 17:15

Ohmi 3

FMC1: Materials and Components
Chair:
Co-Chair:R. Yamaguchi, Akita Univ., Japan
T. Tomono, Toppan Printing, Japan

FMC1 - 1:
16:00

Invited High-Speed On-Chip Light Emitters Basedon Nanocarbon Materials
H. MakiKeio Univ., Japan

We report the electrically driven, high-speed light emitters based on
nanocarbon materials such as carbon nanotubes and graphene. Thisemitter, with the advantages of ultrafast response speeds, a small
footprint and integration on silicon, can enable novel architectures forphotonic and optoelectronic integrated devices.
FMC1 - 2:
16:20

Invited Liquid Crystals for High Performance
Organic Field Effect Transistors
J. Hanna, H. Iino
Tokyo Inst. of Tech., Japan

We discuss how liquid crystallinity can be utilized for ﬁlm fabrication
process and for improvement of device performance, and demonstratethem with a highly ordered smectic liquid crystal of Ph-BTBT-10, which
gives us excellent mobility of over 10 cm2/Vs in its small variation, in
addition to high thermal durability up to 200oC.

97

Thursday
FMC1 - 3
16:40

December 10
Coating ZnO:Zn Nanoparticles with Alumina for
Polymer Protection
J. Silver, R. Li, G. R. Fern, P. Bishop*, B. Thiebaut*
Brunel Univ. London, UK*Johnson Matthey Tech. Ctr., UK

Using a modiﬁed preparation large nanoparticles of ZnO and ZnO:Zn
were coated (without destroying the luminescent properties of thelatter), but the coating is a layer of AZO not Al2O3. Large nanoparticlesof ZnO:Zn were coated with a layer of ZnO by using only (NH4)HCO3 inthe absence of Al2SO4.
FMC1 - 4L
17:00

The Electrical and Optical Properties ofDielectrophoresis Puriﬁed Silver Nanowires Film as
Transparent ElectrodeC. Wei, W. Fu
Tatung Univ., Taiwan

The sheet resistance and optical transmittance were investigated bydielectrophoresis puriﬁed silver nanowires coated on glass. The results
show the DEP puriﬁed AgNWs exhibit better electric resistance andoptical transmittance. DEP force that dispersed the agglomerated
AgNWs is the mechanism.
----- Break ----17:40 - 18:55

Ohmi 3

FMC2: Display Optics and Information Technologies
Chair:
Co-Chair:K. Kurokawa, Entegris Japan, Japan
A. Fujita, JNC, Japan

FMC2 - 1:
17:40

Invited Recent Progress of Visible Light
Communication
S. Haruyama
Keio Univ., Japan

New devices for visible light communication are proposed such asimage sensor as receiver and DMD as transmitter. Capability of image
sensor to detect accurate direction of incoming data and of DMD tocontrol direction of transmitted data will be a key enabler to realize
useful applications.

98

Thursday
FMC2 - 2:
18:00

December 10
Invited Requirements for Diagnostic Monitors andSupporting Latest Image Processing Technologies
Y. Bamba, M. Ogaki, M. Kita, S. Tokurei*,**,
K. Shiotsuki***, J. Morishita*, A. Hayashi, Y. Ohoto
EIZO, Japan*Kyushu Univ., Japan**Yamaguchi Univ. Hospital, Japan***Oita Univ. Hospital, Japan

FMC2 - 3
18:20

Panels with 100% Coverage of Adobe in LED Light
Source Used Displays and Lifetime Estimation
I.-H. Hsieh, S. CW. Wang, S. Hsieh
AU Optronics, Taiwan

We have performed several high color gamut (HCG) displays which
achieve 90% up Adobe RGB coverage and 100% up NTSC (CIE
1931), thereby providing lifetime estimation. The 100% Adobe RGB
coverage panels' LED light source solutions are discussed.
FMC2 - 4L
18:40

Prototyping of LED Color Generator for Imaging
Systems with Wide Gamut
H. Suzuki, H. Urabe*, M. Katoh**, Y. Shimodaira*Nobuo Elect., Japan*Shizuoka Univ., Japan**Papalab, JapanFor colorimetric image capture and reproduction a "ruler" is required tocharacterize color reproduction property of imaging systems.
Prototyping of a programmable light emission system as the ruler was
made. It employs plural LEDs and aims to display colors over wider
gamut than conventional printed color targets.
Also presented in Innovative Demonstration Session (see p. 205)
Author Interviews and Demonstrations
19:00 – 19:40, Ohmi 6

99

FMC

Medical monitors have many special requirements distinguished in
guidelines and standards of countries which are introduced in thispaper. Then, this paper describes our image processing technology
necessary for diagnostic monitors, performance of which should be thehighest in medical monitors, to have an optimized display performancein image sharpness.

Friday

December 11
Friday, December 11

9:00 - 10:00

Ohmi 5

FMC3: Manufacturing Technologies
Chair:
Co-Chair:T. Arikado, Tokyo Electron, Japan
T. Nonaka, Merck Performance Materials, Japan

FMC3 - 1:
9:00

Invited Planarized Stainless Steel Foil for Flexible
Substrate
N. Yamada, S. Yamaguchi, J. Nakatsuka*, Y. Hagiwara,
K. Uemura
Nippon Steel & Sumitomo Metal, Japan*Nippon Steel & Sumikin Materials, Japan

In order to study the possibility of metal foil as a ﬂexible substrate,
stainless steel foil with a planarization layer was produced by both spincoating and R2R-coating. Outgas from the planarization layer was
found to be negligibly small. Prototype OLED lighting device was
successfully fabricated on both substrates.
FMC3 - 2:
9:20

Invited High Resolution Printed Patterning by Using
Seamless Roller Mold (SRM) Technology
T. Tanaka, T. Kitada, M. Abe, N. Ito, M. Oshikata,
M. Ataka*, T. Kishiro*, S. Matsui**Asahi Kasei, Japan*Holon, Japan**Univ. of Hyogo, JapanFor the future electronics devices, like printed electronics, Asahi-Kasei
has been developing SRM fabrication technology. We got ﬁne andaccurate patterns on the roller surface by development applied processof conventional EB lithography, named rEBL process. This paper shows
the detail of rEBL process and demonstrated patterns on plastic
substrates.
FMC3 - 3
9:40

Ultra Thin LTPS-TFT LCD by Using New Technology
C.-H. Liao, T.-C. Fan, M.-C. Tsai, L.-K. Chia, W.-S.Wang,
C.-H. Chan, J.-K. Lu, N. Sugiura
AU Optronics, Taiwan

A new technology was developed and applied to LTPS TFT-LCD. A
newly optimized adhesion layer SiON successfully provided easily
peeling of the glass from the carrier even after LTPS high temperatureprocess. Finally an ultra thin LTPS TFT-LCD whose total thickness is0.915 mm was realized by the new technology.
FMC3 - 4

Withdrawn----- Break -----

100

Friday

December 11

10:40 - 11:40

Ohmi 5

FMC4: Film Technologies
Chair:
Co-Chair:Y. Yang, China Star Optoelect. Tech., China
Y. Saitoh, FUJIFILM, Japan

FMC4 - 1
10:40

Control of Three Dimensional Birefringence of an
Uniaxial Oriented Film by Using Two Different Typesof Nanoparticles
K. Takatoh, M. Akimoto, N. Yasutomo*, T. Abo*
Tokyo Univ. of Sci. Yamaguchi, Japan*Kaneka, Japan

FMC4 - 2
11:00

Development of Super Retardation Film (SRF) and
Its Application to Substrates of Polarizing Plates
Y. Sasaki, K. Murata, T. Oya, T. Suzuki
TOYOBO, JapanCOSMOSHINE SRF is a new PET ﬁlm which eliminated iridescence(Rainbow-mura) derived from birefringence. In this report, theapplication of SRF to the substrate of polarizing plates is proposed. By
this application, the reliability of LCDs is remarkably improved.
FMC4 - 3
11:20

Simulation and Design of MIM Nanoresonators for
Color Filter Applications
S. Banerjee
Sumitomo Chem., Japan

We simulated metal-insulator-metal nanoresonator structures that canbe realized by sandwiching an insulator layer between two metal
grating layers with subwavelength periods and heights. Results indicatethat such structures employing relatively low refractive index polymericmaterials can function as color ﬁlters with reasonably narrow
bandwidths in transmission mode.
Author Interviews and Demonstrations
12:00 – 12:40, Ohmi 6----- Lunch -----

101

FMC

For LCD optical compensation ﬁlms, both controls of ΔNxy and ΔP
have been expected. It was found that by using plural number ofnanoparticles possessing different type of refractive index distributions,like nx < ny = nz and nxny > nz, both of two birefringence ΔNxy and ΔPof uniaxial stretched ﬁlm could be controlled.

Friday

December 11

15:10 - 16:10

Ohmi 9

FMC5: Augmented Reality and Virtual Reality
Special Topics of Interest on Augmented Reality and Virtual Reality
Chair:
Co-Chair:

K. Käläntär, Global Optical Solutions, Japan
I. Amimori, SN Partners, Japan

FMC5 - 1:
15:10

Invited Real-Time Dynamic Holographic 3D Display
in Materials to Future Holographic 3D Televisions
H. Gao, J. Liu, C. Zeng, Q. Yao, P. Liu, Y. Yu, H. Zheng,
Z. ZengShanghai Univ., China

We have realized real-time dynamic holographic 3D display inmaterials, which makes it possible to build large-size, high resolution,and video rate true 3D television or projector. In this talk, we will
present property of our holographic display materials and theirapplications in future 3D displays.
FMC5 - 2:
15:30

Invited Aerial Three-Dimensional Display Based on
Retro-Reﬂective Optical Imaging
D. Miyazaki, Y. Maeda*, S. Onoda, Y. Tokubo,
S. Murakami, R. Tamaki, T. Mukai
Osaka City Univ., Japan*Parity Innovations, Japan

Imaging with a retro-reﬂective optical element can provide ﬂoating
image formation with a wide view angle, because it has low-distortionin spite of high numerical aperture. Three-dimensional display
technologies based on retro-reﬂection with mirror arrays, a dihedral
corner reﬂector array and a roof mirror array are described.
Also presented in Innovative Demonstration Session (see p. 205)
FMC5 - 3
15:50

Polarization State Analysis for Polarized Aerial
Imaging by Retro-Reﬂection (PAIRR)
M. Nakajima*, K. Onuki*, I. Amimori**, H. Yamamoto*,****Utsunomiya Univ., Japan**SN Partners, Japan***JST, CREST, Japan

This paper investigates polarization state of the reﬂected light fromretro-reﬂector in order to improve the brightness of the polarized aerial
imaging by retro-reﬂection (PAIRR). We have conﬁrmed the importanceof the effective reﬂectance. Then, we have found one of the suitable
prism type reﬂector for the PAIRR.
----- Break -----

Author Interviews and Demonstrations
18:10 – 18:50, Ohmi 6102

Friday

December 11

Supporting Organizations:Japan Electronics Packaging and Circuits Association
Japan Society of Colour Material
The Japanese Research Association for Organic Electronics Materials
The Japanese Society of Printing Science and Technology
RadTech JapanThe Society of Photography and Imaging of JapanThe Technical Association of Photopolymers, Japan

FMC

Evening Get-Together
with Wine
Tuesday, Dec. 8, 2015
18:00 – 20:00
Hiei (2F)
Otsu Prince Hotel(Sponsored by Merck Ltd., Japan)
See page 12 for details

IDW Best Paper AwardIDW Outstanding
Poster Paper Award
These awards will go to the most outstanding papers
selected from those presented at IDW ’15.
The 2015 award winners will be announced on the
IDW website: http://www.idw.or.jp/award.html
103Thursday

December 10

Workshop on
EL Displays and Phosphors
Thursday, December 10
9:00 - 10:25

Ohmi 2

PH1: Phosphors for Lighting Application
Special Topics of Interest on Lighting Technologies
Chair:
Co-Chair:A. Meijerink, Utrecht Univ., the Netherlands
K. Wani, TAZMO, Japan

PH1 - 1:
9:00

Invited High Directional LED Lighting for Forming
Pattern, HOLOLIGHT: Its Business Developments
and Prospects
T. Ikeda
Pi Photonics, JapanHOLOLIGHT is a unique patented LED lighting for forming patterncomprising square, round, line and arch. They have a lot of applications
for inspection, stage, architecture, road, safety, art, sightseeing,laboratory, entertainment and so on.
Also presented in Innovative Demonstration Session (see p. 205)
PH1 - 2:
9:25

Invited The GE TriGain Phosphor Based upon
K2SiF6:Mn4+ and Its Use in LED Lighting and LCD
Backlights
A. A. Setlur, F. Garcia, J. E. Murphy, S. P. Sista
GE Global Res., USA

Narrow-emitting downconverters, like GEʼs TriGain K2SiF6:Mn4+
phosphor, improve both brightness and color quality for general lighting
and LCD backlights. We discuss the performance of TriGain phosphors,focusing on how better phosphor chemistry gives higher efﬁciency,
reliability, and lower phosphor usage. TriGain phosphors arecommercially available from GE Lighting.
PH1 - 3
9:50

The Synthesis, Characterisation and Potential of
Eu3+ Doped Molybdate Phosphors for White Light
Emitting Diodes
A. Lipman, M. Fathullah, R. Stone, G. R. Fern,
T. G. Ireland, C. Frampton, J. Silver
Brunel Univ. London, UK

A wide variety of Eu3+ doped molybdate phosphors were synthesisedusing the solid state reaction route and their photoluminescent
properties were compared. Their crystal structures were investigated. A
relationship between cell size and emission intensity was apparent. The
implications of this for phosphor design are discussed.

104Thursday
PH1 - 4L
10:10

December 10
White LEDs Using Sharp β-sialon:Eu Phosphor andK2SiF6:Mn Phosphor for Wide-Color Gamut Display
Application
K. Yoshimura, H. Fukunaga, M. Izumi, M. Masuda,
T. Uemura, K. Takahashi*, R.-J. Xie*, N. Hirosaki*
Sharp, Japan*NIMS, Japan

Sharp B-sialon:Eu (Si6-zAlzOzN8-z:Eu 0<z<0.1) green phosphor issuitable for wide-color gamut white LEDs backlighting system becauseof its sharp and asymmetric emission spectrum shape. In this work, redphosphors are investigated for the purpose for improvement of thedisplay color gamut.
Also presented in Innovative Demonstration Session (see p. 206)----- Break ----10:30 - 12:30

Ohmi 6

PHp1 - 1

PH

Poster PHp1: Phosphors
Photoluminescence Study of Symmetry-Related
Transitions in the Spectrum of Y2O3:Tb3+
D. den Engelsen, J. Silver, T. G. Ireland, G. R. Fern,
P. G. Harris
Brunel Univ. London, UK
Herein we describe the results of a study on the photoluminescence of
cubic nanosized Y2O3:Tb3+. These results conﬁrm our earlier
conclusions based on cathodoluminescence about the energy ﬂow
from excited Tb3+ in a S6 lattice site to Tb3+ in a C2 site.
PHp1 - 2

Blue and Red Cathodoluminescent Emission of
Y2O3:Eu Phosphor Studied as a Function of
Temperature in a Transmission Electron Microscope
G. R. Fern, A. Lipman, J. Silver, A. Howkins,
T. G. Ireland, P. Marsh, D. den Engelsen
Brunel Univ. London, UK

Combined EELS, CL and STEM imaging are used to characterize andstudy Y2O3:Eu to conﬁrm the variation in CL properties and photoluminescent properties observed. The synthetic procedures used havefacilitated this material to manifest a strong blue emission at low
temperature with the expected red emission dominating at room
temperature.
PHp1 - 3

Withdrawn

105

Thursday
PHp1 - 4

December 10
Multiple Quantum Dot Layers by Electrospray
Method for White Light Emitting Diodes
J. Jeong, N. Kim, H. Chae
Sungkyunkwan Univ., Korea

We made the white QD-LED by staking of R, G and B quantum dotswith electrospray deposition. We studied on the device controlling
carriers by changing hole transport layer. It was analyzed for förster
resonance energy transfer. The maximum brightness and current
efﬁciency reached 1,112 cd/m2 and 2.60 cd/A.
PHp1 - 5

Withdrawn

PHp1 - 6

Photoluminescence Properties of ZnO Nanorods on
AZO Substrates Synthesized by Different Methods
C. Li, S. Hou
Kochi Univ. of Tech., JapanThe ZnO nanorods on AZO thin ﬁlms were synthesized by chemicalbath deposition and reducing annealing methods. Both kinds of ZnOnanorods showed vertical alignment with high transmittance. However,the photoluminescence from ZnO nanorods obtained from annealing
method had much strong blue-green intensity. The emission
mechanism is discussed in detail.
PHp1 - 7

Enhancement of Powder EL Performance by Mixing
Two Kinds of ZnS Phosphors with Donor or
Acceptor Type Activator
K. Wani, T. Kanda, E. Hashimoto
TAZMO, Japan

Enhancement of luminance and efﬁcacy was observed for powderdispersed type inorganic EL, in which two kinds of ZnS phosphor
powders were mixed as emission materials in the phosphor layer. The
enhancement was observed when one type of phosphor is Cuactivated, and the other is Al or Cl-activated.
PHp1 - 8L

Continuous Hydrothermal Synthesis of YVO4:Eu,Bi
Nanophosphor Using Flow Channel and Microwave
Heating
T. Kunimoto, Y. Fujita, H. Okura*
Tokushima Bunri Univ., Japan*Merck, JapanA continuous solution synthesis of nanophosphor was succeeded
through the rapid hydrothermal method using a microwave heating. Theinternal quantum efﬁciency of YVO4:Eu,Bi nanophosphor obtained by
microwave heating is about 30% at 320 nm as high as that obtained byconventional autoclave treatment.

106Thursday
PHp1 - 9L

December 10
Inﬂuence of Fe Doping for Luminescent Propertiesof Phosphors
K. Akao, H. Kominami, K. Hara, Y. Nakanishi
Shizuoka Univ., Japan

We investigated the inﬂuence of the phosphors on Fe-doping. D-A pairand oxygen-defect phosphor was strongly inﬂuenced, on the other
hand, SrTiO3:Pr showed different property by Fe-doping. Interestingly,
CL property was almost independent of Fe-addition. It is thought that
Fe might be formed the conductive layer on the phosphor surface.
PHp1 - 10L

Synthesis and Luminescent Properties of Eu Doped
Sr-Al-O Phosphor
T. Akahori, H. Kominami, K. Hara, Y. Nakanish
Shizuoka Univ., Japan

PHp1 - 11L

Preparation and Luminescent Properties of Ultra
Violet Emitting ZnAl2O4 Thin Film by Thermal
Diffusion
T. Ito, H. Kominami, Y. Nakanishi, K. Hara
Shizuoka Univ., Japan

ZnAl2O4 ﬁlm was prepared by ZnO deposition on sapphire and thermal
diffusion by annealing. From XRD and CL, it is shown that UV emitting
ZnAl2O4 layer was formed and the crystallinity was improved byannealing time. It is thought that sufﬁcient thermal diffusion occurs
between the Al2O3 substrate and ZnO ﬁlm.
PHp1 - 12L

The Study of Enhanced Photoluminescence :CaTiO3:Pr3+ Red Phosphors by the Ammonolysis
MethodS. H. Lee, S. J. Lee, H. S. Lee, W. B. Son, S. J. Kim,
Y. S. Kim, S. Kikkawa*
Hyosung RnD Ctr., Korea*Hokkaido Univ., Japan

The produced phosphors were characterized with regards to enhancephotoluminescence properties. The ammonolysis method treatedsamples shown that red emission was enhanced from CaTiO3:Pr3+
phosphors and qualiﬁes these phosphors for further consideration aspromising candidates for UV region convertible phosphors in lightemitting devices.

107

PH

Eu-doped Sr-Al-O phosphor for phosphorescent material was studied.
According to increase of ﬁring temperature, SrAl2O4 phase became
dominant. Annealing in reduced atmosphere was necessary to obtain
Eu2+ emission. The phosphor ﬁred for 6 hours showed the highest PL
intensity. Preparation with reduced Sr ratio was important to avoid
Sr3Al2O6 formation.

Thursday
PHp1 - 13L

December 10
Great Inﬂuence of Inorganic Salts for Controllable
Synthesis of YF3:Yb3+/Er3+ Nanocrystals
G. Murali, R. K. Mishra, J. M. Lee, B. H. Lee, H. G. Ham,
J. H. Kim, D.-K. Lim*, S. H. Lee
Chonbuk Nat. Univ., Korea*Korea Univ., Korea

Shape controllable synthesis of YF3:Yb3+/Er3+ upconversion
nanoparticles is of signiﬁcant importance for understanding the shapedependent properties as well as for exploration of potential
applications. Herein, YF3:Yb/Er nanorods and nanoneedles wereselectively synthesized using CaCl2.2H2O and KNO3 inorganic salts,
respectively.
PHp1 - 14L

Electroluminescence from DC Biased ZnS:Mn
Phosphor Layers Having Cu2O Semiconductor
K. Hashimuko, K. Yanagihara, N. Miura
Meiji Univ., Japan

DC inorganic electroluminescence (EL) devices having p-type Cu2O
semiconductor were proposed. The phosphor layers were formed on
n-p-n structure which acts as not only current control but also hotelectron source. P-type Cu2O was prepared by oxidization of Cu sheet.
This device shows the electroluminescence from low driving voltage
region.
PHp1 - 15L

Reduced Efﬁciency Roll-off in Inverted QuantumDot Light Emitting Diodes Using Metal Oxide ETL
E. Hwang, H.-M. Kim, J. Lee, J. Kim
Kyung Hee Univ., Korea

This research reviews the reduced efﬁciency roll-off property of yellowemitting quantum-dot light-emitting diodes (Y-QLEDs) using metaloxide electron transport layer (ETL). The efﬁciency roll-off is improved
from 27% to 10% at 10,000 cd/m2 with increasing the ETL thickness up
to 120 nm.
PHp1 - 16L

First Principle Calculations for Estimating Charge
Transfer State Energy of Eu3+ Centers in Ionic andCovalent Host Materials
R. Yoshimatsu*,**, M. Okada*, T. Ishigaki***, K. Ohmi*,
S. Watanabe*****Tottori Univ., Japan**Denka, Japan***TiFREC, Japan****Nagoya Univ., Japan

The ﬁrst principles calculations have been performed for estimating thecharge transfer state (CTS) energy of Eu3+ centers activated in several
ionic and covalent host materials. It has been found that the CTS
energy correlates well with the effective charge values of La ions ineach host material.

108Thursday

December 10

10:30 - 12:30

Ohmi 6

Poster PHp2: Phosphors for Lighting Application
Special Topics of Interest on Lighting Technologies
PHp2 - 1

The Enhancement on Photoluminescence
Characteristics of Ba1-xZrSi3O9:xEu2+ Phosphors by
Sr2+ Substituting
K.-C. Cheng, C.-H. Chiang, T.-S. Zhan, S.-Y. Chu
Nat. Cheng Kung Univ., Taiwan

In this article, single-phase Ba(1-x)ZrSi3O9:xEu2+, Sr 2+ phosphors weresynthesized via the solid-state reaction method. The crystal structure
and luminescence properties were investigated using X-ray diffraction
and photoluminescence measurements, respectively. An increase of
the dopant Sr 2 +, increased the emission intensity of the phosphors.
PHp2 - 2

Effects of Fluxes on Luminescent Properties of
YAG:Ce Phosphors and Their Application to WhiteLight-Emitting Diodes

PH

C.-H. Chiang, T.-S. Zhan, K.-C. Cheng, S.-Y. Chu
Nat. Cheng Kung Univ., Taiwan
In this work, the dependence of amount of the ﬂuxes (H3BO3 and BaF2)
on the luminescence of Y2.95Al5O12:0.05Ce3+ phosphors and theirapplication to white light-emitting diodes were investigated. The
difference in luminescent properties of phosphor prepared with BaF2
and H3BO3, was well explained by the powder morphology.
PHp2 - 3

High Directivity Light Source Based on Photonic
Crystal Structure
C. C. Chiu, F.-L. Hsiao
Nat. Changhua Univ. of Education, Taiwan

The light-emitting diodes (LED) have been widely applied in projector
displays and backlight. Especially, 3D display need highly directionaland High brightness light source. Some research also proved to limit
the light in speciﬁc area with the characteristics of photonic crystal
band gap so as to enhance the light extraction rate.
PHp2 - 4

Synthesis and Luminescent Properties of Novel
Ce3+- and Eu2+-Doped La3Br(SiS4)2 Bromothiosilicate
Phosphors for White LEDs
S.-P. Lee, T.-M. Chen
Nat. Chiao Tung Univ., Taiwan
3+

Novel Ce - and Eu2+-doped La3Br(SiS4)2:Ce3+/Eu2+ bromothiosilicate
phosphors were prepared in a sealed ampule. The La3Br(SiS4)2:Ce3+
phosphor is excitable at 370 to 400 nm and generates a cyan emission,and the La3Br(SiS4)2:Eu2+ phosphor can be excited over a broad range
from UV to blue and generates a red broadband emission.
----- Lunch ----109

Thursday

December 10

16:00 - 17:10

Ohmi 2

PH2: Phosphor for General
Chair:
Co-Chair:A. A. Setlur, GE Global Res., USA
R.-J. Xie, NIMS, JapanPH2 - 1:
16:00

Invited Light from Lanthanides
A. Meijerink
Utrecht Univ., the Netherlands

Lanthanides form a prominent class of luminescent ions for wLEDs anddisplays. Here we discuss important challenges including temperature
quenching in YAG:Ce and narrow band emitting QDs. Recent
development for the emerging class of Ln-doped luminescentnanocrystals will be discussed.
PH2 - 2:
16:25

Invited Chemical Control of Crystal Structure andPhotoluminescence in Oxonitridosilicate Phosphors
R.-S. Liu
Nat. Taiwan Univ., Taiwan

To improve the color rendering index, correlated color temperature andthermal stability of layer-structured MSi2O2N2:Eu (M = Sr, Ba)
phosphors, cation substitutions have been used to adjust theirluminescent properties. This study serves as a guide in developing
oxynitride luminescent materials with controllable optical properties
based on variations in local coordination environments through cation
substitutions.
PH2 - 3
16:50

Studies on the Infrared Emitting ZnCdS:Cu, In, Cl
Phosphors –Phosphors for Marking, Coding, andIdentiﬁcation–
J. Silver, P. J. Marsh, G. R. Fern
Brunel Univ. London, UK

Zn1-xCdxS:Cu0.03%,Cl infrared emitting phosphors have been synthesizedby an aqueous thermal decomposition method. Co-doping Zn1-xCdxS:Cu0.03%
with In3+ increased the infrared emission intensity by up to 50% overthat of the equivalent Zn1-xCdxS:Cu0.03% phosphor with no indium codoping, with the highest intensities being where x = 0.7-0.8.
----- Break -----

Author Interviews and Demonstrations
19:00 – 19:40, Ohmi 6110Friday

December 11
Friday, December 11

9:00 - 10:00

Ohmi 8

PH3: Phosphor Application
Chair:
Co-Chair:J. Silver, Brunel Univ. London, UK
R.-S. Liu, Nat. Taiwan Univ., Taiwan

PH3 - 1
9:00

Inverted Quantum Dot Light-Emitting Diodes with
CdSe/ZnS and CuInS2/ZnS Quantum Dots
M. Hishinuma, J. Maki, T. Fukuda, N. Kamata, Z. Honda
Saitama Univ., Japan

Since quantum dot light-emitting diodes have been interested as novel
emitting devices due to the high stability and the controlled emission
wavelength, several structures have been investigated. In this study, we
succeeded in stabilizing the current density-voltage characteristics by
optimizing the washing process of the synthesized CuInS2/ZnS
quantum dot.

PH

PH3 - 2:
9:20

Invited Polarized Emission of Quantum Rods
Dispersed Nanoﬁber Sheet
M. Hasegawa, Y. Hirayama, S. Dertinger
Merck, Japan

We fabricated a sheet of aligned electrospun polymer nanoﬁbers
embedded with semiconductor quantum rods and conﬁrmed the
production of polarized ﬂuorescence emission. The thickness andpolarization ratio of the sheet were 1.5 microns and 0.6, respectively.
We also examined the effect of electrospinning parameters on thepolarization ratio.
PH3 - 3PH3 - 4L
9:45

Withdrawn
Seeded Growth in Continuous Flow: Synthetical
Insights into CdSe/CdS Nanorods for Optoelectronic
Devices
T. Jochum*, J. S. Niehaus*, H. Weller*,***Ctr. for Appl. NanoTech., Germany**Univ. of Hamburg, Germany

Hereby we present a novel synthetic approach for producing highquality CdSe/CdS nanorods for optoelectronic devices. The synthesis isbased on the continuous ﬂow technique allowing high reproducibility,
user friendly handling and facile up-scaling procedure for industrial
demand.
----- Break ----Author Interviews and Demonstrations
12:00 – 12:40, Ohmi 6
Supporting Organizations:
The 125th Research Committee on Mutual Conversion between
Light and Electricity, Japan Society for Promotion of Science
Phosphor Research Society, The Electrochemical Society of Japan111

Friday

December 11

Workshop on Field Emission Displays,
CRTs and Plasma Displays
Friday, December 11
10:40 - 10:45

Ohmi 3

Opening
Opening Remarks
10:40
H. Mimura, Shizuoka Univ., Japan

10:45 - 12:25

Ohmi 3

FED1: Advanced Technologies and FE Mechanism
Chair:
Co-Chair:

M. Nagao, AIST, Japan
Y. Neo, Shizuoka Univ., Japan

FED1 - 1:
10:45

Invited Coherent Electron Source: Single-AtomElectron Emission Source
C. Oshima
Waseda Univ., Japan

We review our recent results concerned with basic electron emission
properties of single-atom electron sources, and their applications to thelow-energy SEM and TEM. Except their energy widths, all the otherssuch brightness, stability, collimation of the observed electron beams
have been excellent in comparison with conventional ones.
FED1 - 2
11:25

Field Emission Characteristics from Molybdenum(100) Surface with Thin Yttrium Oxide Layer
T. Kawakubo, T. Kitani, H. Nakane*Nat. Inst. of Tech. Kagawa College, Japan*Muroran Inst. of Tech., Japan

In this research, we observed the electron emission from yttrium oxide/
molybdenum(100) emitter sample which is a molybdenum sharp
needle modiﬁed yttrium oxide.

112

Friday
FED1 - 3
11:45

December 11
Deposition of Glycine Molecules on Tungsten
Emitter and Observation of Its Surface with Field
Ion Microscope
N. Nyuba, M. Okada, H. Tsuji, Y. Gotoh
Kyoto Univ., Japan

Glycine was deposited on a tungsten needle, and its surface wasobserved by ﬁeld ion microscope. The position of the ﬁeld desorbed
spots was analyzed by calculating the image intensities before andafter desorption. It was found that bright spots were localized aroundthe ridge.
FED1 - 4
12:05

Surface Activation of GaAs Photocathode and Its
Photoemission Characteristics
T. Masuzawa, K. Mitsuno, Y. Hatanaka, Y. Neo,
H. Mimura
Shizuoka Univ., Japan

In this study, surface activation process of GaAs photocathode wasinvestigated. Spectral sensitivity of the photocathode with different
surface conditions showed that surface activation by alternative Cs andO exposure forms negative-electron-afﬁnity surface on GaAs,
enhancing its photoemission.

FED

Author Interviews and Demonstrations
12:00 – 12:40, Ohmi 6----- Lunch ----13:30 - 15:10

Ohmi 3

FED2: FEA Fabrication Process and Novel Materials
Chair:
Co-Chair:F. Wakaya, Osaka Univ., Japan
H. Shimawaki, Hachinohe Inst. Tech., Japan

FED2 - 1
13:30

Revised Fabrication of Volcano-Structured DoubleGate Spindt-Type FEA
M. Nagao, Y. Gotoh*, T. Masuzawa**, Y. Neo**,
H. Mimura**
AIST, Japan*Kyoto Univ., Japan**Shizuoka Univ., Japan

Volcano-structured double-gate Spindt-type FEA is fabricated for theimage sensor application. The fabrication is revised in order to improvethe beam focusing characteristics. The beam spot diameter of 50 Mm isachieved at the emission current of 1 MA which is necessary for
imaging operation.

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FED2 - 2
13:50

December 11
Effect of Electrode Geometry on Focusing Propertyof Volcano-Structured Double-Gate Spindt-TypeFEAs
Y. Gotoh, H. Tsuji, M. Nagao*
Kyoto Univ., Japan*AIST, Japan

Effect of the electrode geometry on the focusing properties of volcanostructured double-gate Spindt-type FEAs was investigated by computer
simulation. Several different geometries of the gate and the focusing
electrode were examined, and it was found that the radius of the
focusing electrode gave no signiﬁcant difference in the focusing
property.
FED2 - 3
14:10

Electrostatic-Focusing FEA-HARP Image Sensor
with Volcano-Structured Spindt-Type FEA
Y. Honda*,**, M. Nanba*, K. Miyakawa*, M. Kubota*,
M. Nagao***, Y. Neo**, H. Mimura**, N. Egami*****NHK, Japan**Shizuoka Univ., Japan***AIST, Japan****Kinki Univ., JapanAn electrostatic-focusing FEA-HARP (high-gain avalanche rushing
amorphous photoconductor) image sensor with volcano-structured
Spindt-type FEA was fabricated and tested. Experimental results
showed that higher electron-beam current was extracted from thevolcano-structured FE than from conventional double-gated FE andthis sensor could obtain images by utilizing the effect of electrostatic
focusing.
FED2 - 4
14:30

Field Emission from Volcano-Structured SiliconField Emitter Arrays under Pulsed Laser
Illumination
H. Shimawaki, M. Nagao*, Y. Neo**, H. Mimura**,F. Wakaya***, M. Takai***
Hachinohe Inst. of Tech., Japan*AIST, Japan**Shizuoka Univ., Japan***Osaka Univ., Japan

We investigate the photoresponse of a p-type silicon ﬁeld emitter array
under irradiation of laser pulses for generating of pre-bunched electron
beam. The measured rise and fall times of the emission current were
improved to less than 2 ns by using the emitters with volcano structure.

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FED2 - 5
14:50

December 11
Fabrication of GOS (Graphene/Oxide/
Semiconductor) Type Electron Emission Devices
S. Tanaka, K. Murakami, M. Nagao*, J. Fujita
Univ. of Tsukuba, Japan*AIST, JapanThe graphene was used as the topmost electrode for the metal/oxide/
semiconductor type electron emission devices. The 3~4 layer graphene
electrode on the thin oxide layer was directly deposited by gallium
vapor-assisted chemical vapor deposition. The maximum electron
emission efﬁciency was approximately 0.2%.
----- Break ----15:20 - 16:40

Ohmi 3

FED3: Flexible Light Source Using Plasma Technologies
Chair:
Co-Chair:H. Kajiyama, Tokushima Bunri Univ., Japan
T. Shiga, Univ. of Electro-Commun., Japan

FED3 - 1
15:20

A Mechanism of Photochromic Transition of
Semiconductor Nanoparticles
H. Kajiyama, T. Kawamoto, K. Uchino*, K. Takata**,
S. Inoue***

FED

Tokushima Bunri Univ., Japan*Kyushu Univ., Japan**Kansai Univ., Japan***Hiroshima Univ., Japan
Semiconductor nanoparticles are synthesized using a VHF plasma
assisted chemical vapor deposition apparatus. Such nanoparticles
show a photochromic transition by UV irradiation. The effects of particle
size and baking temperature on the stability of the photochromic states
are investigated. The possible mechanisms of the photochromictransition are discussed.
FED3 - 2
15:40

Pulse Lighting Effect on the Photosynthesis of Leaf
Vegetables
S. Nagahara, T. Kono, S. Funai, H. Kajiyama
Tokushima Bunri Univ., JapanThe effects of pulsed lighting on leaf vegetables are investigated using
a new type of plasma light source. It is conﬁrmed that pulsed lighting is
the efﬁcient way to promote photosynthesis with less energy. The
electric power consumption of plasma light source is estimated to be
10% of LED.

115

Friday
FED3 - 3L
16:00

December 11
Dependence of Luminous Efﬁcacy on Electrode
Gap in Ultra Thin Discharge Tube
K. Komatsu, T. Shiga
Univ. of Electro-Commun., Japan

Luminous efﬁcacy in the ultra thin discharge tube having a crosssection 1.0 mm 0.55 mm increases as the electrode gap increases.
When the discharge tube with 4 mm gap is driven at 100 kHz, 325 V,
green luminance and luminous efﬁcacy are 3900 cd/m2 and 10.2 lm/W.
FED3 - 4L: Invited Current Status of the Flexible Surface Light
16:15
Source Development Using LAFi Technology
K. Awamoto, H. Hirakawa, B. Guo, T. Shinoda
Shinoda Plasma, JapanA Luminous Array Film (LAFi) technology, that is a ﬂexible surface lightsource device, can generate light from visible to deep ultraviolet. We
developed a new device structure of LAFi, and found the goodcharacteristics without mercury for a deep UV light source for medical
and several industrial applications.
----- Break -----

Author Interviews and Demonstrations
18:10 – 18:50, Ohmi 6
Supporting Organizations:
JSPS 158th Committee on Vacuum Nanoelectronics
Technical Meeting on Plasma Science and Engineering

IDW ’15 Tutorial in Japanese
Organized by SID Japan Chapter
Tuesday, Dec. 8, 2015
12:50 – 17:50
Ohmi 10 (2F)
Otsu Prince Hotel
Detailed information is available on
http://www.sid-japan.org/
116

Wednesday

December 9

Workshop on OLED Displays andRelated Technologies
Wednesday, December 9
13:30 - 14:45

Ohmi 1

OLED1: Advanced OLED Technologies I
Chair:
Co-Chair:K. Monzen, Nissan Chem., JapanT. Wakimoto, Merck, Japan

OLED1 - 1: Invited Recent Progress on the Understanding of
13:30
Molecular States in OLED Films: Molecular
Orientation, Packing, and Mixing
D. Yokoyama
Yamagata Univ., Japan
Along with the continuous progress on the device performance of
OLEDs, the importance of fundamental understanding of theiramorphous ﬁlms has been increasing to further improve their efﬁciency
and stability. This presentation reviews the recent progress on theunderstanding of molecular states, especially focusing on molecularorientation, packing, and mixing.
OLED1 - 2: Invited Recent Advances in Understanding of the
13:50
Electronic Processes in OLEDs
J.-J. Kim
Seoul Nat. Univ., Korea

OLED1 - 3
14:10

Durability of Flexible Display Using Air-Stable
Inverted Organic Light-Emitting Diodes
T. Tsuzuki, G. Motomura, Y. Nakajima, T. Takei,
H. Fukagawa, T. Shimizu, M. Seki*, K. Morii**,
M. Hasegawa**, T. Yamamoto
NHK, Japan*NHK Eng. Sys., Japan**Nippon Shokubai, Japan

We fabricated passive matrix ﬂexible displays using air-stable inverted
OLEDs to examine their adaptability to the display fabrication process
and to evaluate the durability of the displays. The display, which wasencapsulated with a low-barrier ﬁlm (WVTR: 3 10-4 g/m2/day),exhibited clear moving images even three months after fabrication.

117

OLED

Recent advances in the understanding of the electronic processes
including the triplet harvesting by ﬂuorescent molecules, emitting dipole
orientation of phosphorescent dyes and its inﬂuence on efﬁciency,
degradation and recombination in OLEDs are discussed based on our
most recent works using Intermolecular excited state charge transfer
complexes.

Wednesday
OLED1 - 4

December 9
Withdrawn

OLED1 - 5L High Aperture Ratio Organic Light Emitting Diodes
14:30(OLED) Pixels with 640 ppi Resolution Realized by
CA i-Line Photolithography
T.-H. Ke*, P. Malinowski*, A. Nakamura**, S. Steudel*,D. Janssen**, Y. Kamochi***, I. Koyama***, Y. Iwai***,P. Heremans*,*****imec, Belgium**FUJIFILM Elect. Materials, Belgium***FUJIFILM, Japan****Holst Ctr., the Netherlands

We realized high resolution OLED pixels with aperture ratio (AR)scaling via photolithography. Surface coverage of the patterned organic
layers is nearly 80%. Passive OLED arrays with AR of 34% are realizedwith subpixel pitch of 20 Mm. The lifetime of the patterned OLED is
increased by increasing AR in pixel design.
----- Break ----15:10 - 16:45

Ohmi 1

OLED2: OLED for Lighting Applications
Special Topics of Interest on Lighting Technologies
Chair:
Co-Chair:Y. Kijima, JOLED, Japan
H. Kuma, Idemitsu Kosan, Japan

OLED2 - 1: Invited Recent Advances in OLED Lighting
15:10
M. Boesing, F. Lindla, A. Koehnen, V. Gohri*, M. Ruske*,
S. Hartmann, E. Meulenkamp*
Philips Business Ctr. OLED Lighting, Germany*OLEDWorks, USA
In this work we present our most recent advances w.r.t. OLED lighting
panel performance: By employing a new (improved) device structure in
combination with an internal light extraction concept and a highly
reﬂective top contact, we are able to drastically increase light extraction
efﬁcacy of the panel.
OLED2 - 2
15:30

Blue Light Efﬁciency Enhancement of OLED by Thin
Film Included Micro-Particles and Copper Sulfate
Solution
C.-H. Chiu, W.-C. Chien*, C.-H. Chien*, Y.-H. Chen*
Chunghwa Picture Tubes, Taiwan*Tatung Univ., Taiwan

Copper sulfate solution and PDMS were used as the base material of
optical ﬁlm. Two kinds of micro metal oxide particles were chosen to be
doped into the optical ﬁlm. The optical thin ﬁlm attached to the OLED
can enhance 77% blue light intensity and increase color temperature of
550 K.
118

Wednesday
OLED2 - 3
15:50

December 9High Efﬁcient and Stable Quantum Dots Film with
Interdiffused Structure as Down-Conversion
Material Utilized in Blue Organic Light Emitting
Diode for Solid-State Lighting Application
V. Arasu, D. Jo, B. Kim, H. Chung
Sungkyunkwan Univ., Korea

QDs Down-conversion ﬁlm with thin, efﬁciently dispersed, nonagglomerated were fabricated by ʻPolymer-free Nanoparticles
Adhesion Techniqueʼ. The achieved down-conversion enhancement
were 15% The major focuses were on development of highphotoluminescence (91%), nearly zero interface and Interdiffused-core/alloy/shell structure QDs materials synthesized by simple andreproducible one-pot hydrothermal injection method.
OLED2 - 4
16:10

Fabrication of High Efﬁciency Color-Conversion
Layer for Hybrid OLED Lighting
B. Kim, D. Jo, D. Yoon, H. Chung
Sungkyunkwan Univ., Korea

Hybrid OLED has been used with blue OLED and giving color
changing layer to generate the white emission. In order to achieve high
CRI and efﬁciency, we have developed facile and efﬁcient fabrication
method for color conversion layer, called as Adhesive Transfer, yielding
the high packing density and out-coupling efﬁciency.
OLED2 - 5L Soluble Bipolar Red Host Material for Solution
16:30
Processed Organic Light Emitting Diodes
S.-R. Park, Y.-R. Cho, M. C. Suh

We have fabricated highly efﬁcient red phosphorescent organic lightemitting diodes (OLEDs) by solution process combined with thermallyevaporated blue common layer structure. To obtain high performances,
we designed and synthesized a new bipolar host material withbenzocarbazole
andtr iphenyltr iazine
moieties(11-[3-(4,6-diphenyl-[1,3,5]triazin-2-yl)phenyl]-11H-benzo[a]carbazole,
RH).
Author Interviews and Demonstrations
16:30 – 17:10, Ohmi 6

119

OLED

Kyung Hee Univ., Korea

Thursday

December 10
Thursday, December 10

9:00 - 10:15

Ohmi 1

OLED3: OLED Materials
Chair:
Co-Chair:T. Ikuta, JNC Petrochem., Japan
S. Naka, Univ. of Toyama, Japan

OLED3 - 1: Invited Molecular Design of High Efﬁciency
9:00
Thermally Activated Delayed Fluorescent Emitters
D. R. Lee, S. K. Jeon, W. Song, J. Y. Lee
Sungkyunkwan Univ., Korea
We designed several triazine and carbazole based thermally activateddelayed ﬂuorescent emitters as high efﬁciency and stable emitters. It
was found that a molecular design derived from the triazine andcarbazole could improve the external quantum efﬁciency up to 25%
and provide reasonable lifetime.
OLED3 - 2
9:20

Improvement Efﬁciency of Blue Fluorescence
Device with TADF Host Material
W. Song, J. Y. Lee
Sungkyunkwan Univ., Korea

A blue ﬂuorescence device of emission layer (EML) structure of
CzAcSF:DPEPO:TBPe (1:1:0.5%) showed a high quantum efﬁciency of
17.7% compared to a quantum efﬁciency of 4.4% of conventional TBPe
device. The blue ﬂuorescence device with EML structure of
CzAcSF:TBPe showed quantum efﬁciency of 14.1%.
OLED3 - 3
9:40

UV-Ozone-Treated Ultra-Thin Li-Doped NiO Film as
Anode Buffer Layer on Organic Light Emitting
DiodesH.-W. Lu, P.-C. Kao, S.-Y. Chu
Nat. Cheng Kung Univ., Taiwan

In this paper, the UV-ozone treated 5 wt% Li2CO3-doped NiO layers for
0.5 nm as anode buffer layer were prepared by thermal evaporation.
The current density enhanced from 235 to 530 mA/cm2, luminanceenhanced from 7588 to 17730 cd/m2, and efﬁciency enhanced from 3.2
to 3.34 cd/A.

120

Thursday

December 10

OLED3 - 4L Efﬁcient Blue Thermally Activated Delayed
10:00
Fluorescence Material with Carboline Donor Moiety
B. Y. Kang, J. M. Lee, G. H. Kim, J. Y. Lee, J. H. Kwon
Kyung Hee Univ., Korea
We report two synthesized blue thermally activated delayed
ﬂuorescence (TADF) emitters, 4,5-bis-A-carboline-9-yl-phthalonitrile(A-2CbPN) and 4,5-bis-D-carboline-9-yl-phthalonitrile (D-2CbPN).
Synthesized D-2CbPN emitter shows about 92% photoluminescencequantum yield with excellent TADF process. Fabricated blue OLED with
the D-2CbPN emitter shows 23% maximum external quantum
efﬁciency.
----- Break ----10:30 - 12:30

Ohmi 6

Poster OLEDp1: OLED Poster
OLEDp1 - 1 Flexible OLED Lighting Panel with Capacitive
Coupling Wireless Power Supply
Y. Murozono, R. Hattori, T. Yagi*, K. Omata*
Kyushu Univ., Japan*Konica Minolta, Japan
An organic light-emitting diode (OLED) lighting panel is powered by acapacitive-coupling wireless-power transmission system with a wide
power-receiving position. The panel consists of only OLEDs with
ﬂexible plastic substrate and rectifying diodes, which result in a very
simple and ultrathin lighting device.

OLED

OLEDp1 - 2 Inorganic High Gas Barrier Films Deposited by
PECVD Using a Novel Precursor, TG-4E, for OLED
Devices
H. Chiba, K. Tokuhisa
Tosoh, Japan
Inorganic high gas barrier ﬁlms were deposited by PECVD using anovel precursor, TG-4E, and tetraethoxysilane (TEOS), and these ﬁlms
were colorless, transparent, and ﬂat. The water vapor transmission rate
(WVTR) of a three-layer coated ﬁlm deposited from TG-4E achieved
4.1 10-5 g/m2/day under 40 C, 90%RH condition.

121

Thursday

December 10

OLEDp1 - 3 Fabrication and Analysis of Tandem-StructureDual-Function Photovoltaic Organic Light Emitting
DiodesD.-J. Kim, H.-N. Lee
Soonchunhyang Univ., Korea
We designed and fabricated dual-function photovoltaic organic-lightemitting-diodes (PVOLEDs) with a common electrode structure. The
light-emission function and the power conversion function of PVOLEDs
are analyzed and reported here. 21000 cd/m2 luminance and 2.8%
power conversion efﬁciency were obtained.
OLEDp1 - 4 The Application of Cyclic Tryphenylamine
Compounds to Wet-Processable OLED
K. Ishitsuka, T. Sugioka, S. Funyuu, H. Sawamoto*,
R. Ohata*, K. Ogino*
Hitachi Chem., Japan*Tokyo Univ. of A&T, JapanThe spectroscopic character, energy level and hole transport property
of cyclic triphenylamine (CTPA) compounds were investigated todetermine novel hole transport material for wet-processable organic
light-emitting diodes (OLEDs). It was shown that CTPA have suitablehole transport properties and energy level for the hole transport layermaterial of OLED.
OLEDp1 - 5 Vertical Organic Light Emitting Transistors in the
Presence of Various ETL Materials
S. I. Yoo*, J. W. Kim*, J. S. Kang*, G. J. Yoon*, W. Y. Kim*,***Hoseo Univ., Korea**McMaster Univ., Canada

We fabricated vertical organic light emitting transistors (VOLETs) withvarious ETL materials to investigate physical and electrical properties
about carrier injection in the device performance. ETL materials(Alq3,
TPBi and 3TPYMB) were selected for VOLET based upon low electron
mobility and minimum energy barrier between EML and ETL.
OLEDp1 - 6 Energy Transfer of Triplet Excitons between EML
and ETL Materials in Single Emissive White
Phosphorescent OLEDs with Three Primary Colors
J. W. Kim*, S. I. Yoo*, J. S. Kang*, G. J. Yoon*, S. E. Lee,Y. K. Kim, W. Y. Kim*
Hongik Univ., Korea*Hoseo Univ., Korea
Performance of collisional quenching process between ETL materials
and blue phosphorescent dopant was analyzed through spectroscopic
study to verify loss of diffusive triplet excitons between them. EQE ofthe white PHOLED with TmPyPB as ETL is higher than the others with
Bphen and TPBi due to preventing collisional quenching process.

122Thursday

December 10

OLEDp1 - 7 Fabrication of Multi-Layer Inverted Organic Light
Emitting Diodes by a Spin Coating Method
J. Hasegawa*, M. Takada*, T. Nagase*,**, T. Kobayashi*,**,
H. Naito*,***Osaka Pref. Univ., Japan**The Res. Inst. for Molecular Elect. Devices, Japan

We characterized multi-layer inverted organic light emitting diodes(iOLEDs) fabricated by a spin coating method. The device showed thehighest brightness of 15,500 cd/m2 and maximum current efﬁciency of
10 cd/A.
OLEDp1 - 8 High-Efﬁciency and Color Tunable Hybrid WhiteOLED Devices
H.-L. Huang, B. Balaganesan, H.-M. Kuo, C.-J. Lin,
T.-C. ChaoeRay Optoelect. Tech., Taiwan
The novel phosphorescent host for phosphorescent yellow dopant was
designed and prepared with easy scale-up reaction procedures. Under
10 mA/cm2, the hybrid WOLED can be tuned from warm white 32.1
lm/W@(0.50,0.43), 24.3 lm/W@CIE(0.46,0.41) to cold white 15.0 lm/W
@CIE(0.38,0.37) under different thickness of the blue layer.
OLEDp1 - 9 Optimization of Organic Photodetector Using OLEDLighting Device
J. S. Kang*, S. I. Yoo*, J. W. Kim*, G. J. Yoon*, W. Y. Kim*,***Hoseo Univ., Korea**McMaster Univ., Canada

OLEDp1 - 10 A Green Thermally Activated Delayed Fluorescent
Material Based on Dual Emitting Core Design
H.-M. Kim, J.-Y. Lee
Sungkyunkwan Univ., Korea
DDCzPDCN with a donor-acceptor structure was synthesized for
effectively separating HOMO and LUMO, so that the gap between
singlet energy and triplet energy can be reduced. We fabricated a
device for electroluminescence properties of the synthesizedcompound. The device showed external quantum efﬁciency of 10.6%.

123

OLED

We studied optical characteristics of OLED lighting device controlled by
an OPD using 5,12-dihydro-5,12-dimethylquino[2,3-b]acridine-7,14dione (DMQA) as donor and bisbenzimidazo[2,1-a :1',2-b']anthra[2,1,9def :6,5,10-d'e'f']diisoguinoline-10,21-dione, with cis isomer (PTCBI) as
acceptor. OPD was optimized throughout optical and electricalcharacterization of red, green and blue emission in mono color OLED.

Thursday

December 10

OLEDp1 - 11 Electrooptic Characteristics of Organic Light
Emitting Diode Using an Index Mitigating Scattering
Layer
H. Jung, T. W. Gong, J. S. Gwag
Yeungnam Univ., Korea
In order to improve the external efﬁciency, PLED structures with ascattering layer which exists for mitigating index mismatching layer areproposed. The experimental data showed that the coupling-out
efﬁciency of PLED was improved by 18% for inner scattering layer andby 48% for outer scattering layer.
OLEDp1 - 12 Enhancement of OLED Light Extraction Efﬁciency
with Patterned Structure and Micro-Lens Array
Z. Zhang, B. Kim, H. Chung
Sungkyunkwan Univ., Korea
Light extraction of OLED has been widely developed for light emitting.
We fabricated high efﬁcient OLED devices by using novel modiﬁed
substrate. The gathered lights can be extracted by micro-lens-array. By
applying the modiﬁed structure, highly efﬁciency enhanced OLED
device can be achieved simply.
OLEDp1 - 13 AC-Operated Electrochemiluminescent Device
Containing Ruthenium(II) Complex with HighEmission Intensity and Long Device Lifetime
S. Tsuneyasu, K. Ichihara, K. Nakamura, N. Kobayashi
Chiba Univ., Japan
Electrochemiluminescence (ECL) is an emission phenomenon fromelectrochemically generated excited state. In this study, we introduced
TiO2 nanoparticle in Ruthenium(II) complex-based ECL electrolyte inorder to improve ECL properties of AC-operated ECL device. As aresult, the ECL intensity and long term stability of the device were
improved by adding TiO2 nanoparticle in ECL solution.
OLEDp1 - 14L Phosphor-Converted Flexible White OLEDs from
Fluorescent Blue OLEDs
S. H. Kim, C. Kim*, Y. Chae*, S. H. Lee*, S. M. Cho*
SABIC Korea, Korea*Sungkyunkwan Univ., Korea
Phosphor-converted ﬂexible white organic light-emitting diodes(OLEDs) were fabricated with ﬂuorescent blue OLEDs. The maximum
power efﬁciency of the white OLEDs was 35 lm/W. The 8.4 lm/W power
efﬁciency of original blue ﬂuorescent OLEDs was enhanced to 17.5 lm/
W by applying a light scattering layer and micro-lens array.

124

Thursday

December 10

OLEDp1 - 15L A Deep Blue TADF Emitter as Potential Replacement
for Conventionally Used Emitter Systems
G. Liaptsis
CYNORA, Germany
The replacement of conventional ﬂuorescent blue emitters by TADF
related systems, which can either be copper based or truly organic,
allows for a reasonable decrease in power consumption of lightemitting devices and enables a deeper blue emission compared torecently used triplet emitters without losses in efﬁciency.
OLEDp1 - 16L Novel Bis-Cyclometalated Iridium(III) Complexes
with π-Extended Cyclometalated Ligands Showing
Highly Efﬁcient Red Phosphorescence
S. Yagi, L. Sun, N. Okamura, T. Maeda, H. Nakazumi,
Y. Masahiro*
Osaka Pref. Univ., Japan*TANAKA Holdings, Japan
Highly efﬁcient red phosphorescent bis-cyclometalated iridium(III)complexes were developed using P-extended cyclometalated ligands.
The aromatic ancillary ligand with bulky substituents is essential toobtain high photoluminescence quantum yields (> 0.40 in PMMA).
Using the developed complexes as an emitting dopant, OLEDs were
fabricated, emitting reddish orange to deep red.
OLEDp1 - 17L Enhanced Efﬁciency and Stability of Organic LightEmitting Diodes with a P-I-N-P Structure
L. Zhang, Z.-K. Wang, L.-S. Liao
Soochow Univ., China

OLEDp1 - 18L Solution-Processed Yellow OLED with Longer
Lifetime
J.-Y. Liao, J.-S. Lin, H.-C. Yeh, P.-C. Huang,
H.-L. Huang*, M.-R. Tseng
ITRI, Taiwan*eRay Optoelect. Tech, Taiwan
A solution-processed yellow device, composed of a novel POT-09
emitter, with a longer lifetime is studied. Lifetime tests of different initialbrightness are recorded and power factors for LT50, LT70, and LT95
are also correlated. The half lifetime at initial 1000 nits is estimated as
6,745 hours.

125

OLED

Organic light-emitting diodes (OLEDs) with P-I-N-P structure weredeveloped. This P-I-N-P-based device showed lower driving voltage,
higher efﬁciency and longer operational lifetime than conventional P-IN-based device. The improved device performance is ascribed to asuperior conductivity and a protection of electron transporting layer by
the p-doped layer.

Thursday

December 10

OLEDp1 - 19L Highly-Efﬁcient Solution-Processed Organic LightEmitting Diodes
H.-C. Yeh, J.-S. Lin, C.-H. Chou, J.-L. Liou, J.-Y. Liao,
M.-H. Chang, T.-C. Chao*, M.-R. Tseng
ITRI, Taiwan*e-Ray OptoElect. Tech., Taiwan
PB-05, PG-15, PY-03 and PR-13 are newly synthesized iridium
complexes. A solution-processed white emission OLED using PY-03
and PB-05 as dopants exhibits high performance with current efﬁcacyof 32.3 cd/A and power efﬁcacy of 25.3 lm/W at 1,000 cd/m2.
OLEDp1 - 20L Low Operating Voltage Vertical Organic LightEmitting Transistor Using Oriented Molecular Thin
Film
S. Kobayashi, H. Fukagawa*, K. Kudo**, Y. Watanabe
Tokyo Univ. of Sci. Suwa, Japan*NHK, Japan**Chiba Univ., Japan
We proposed a novel OLET for displays. In the OLET, the OLED is
formed on the vertical organic transistor. We succeeded to obtainluminance of 1000 cd/m2 at gate voltage of –2 V. ON/OFF ratio of
luminance is 103 at gate voltage of –2 V to 0 V.
OLEDp1 - 21L Enhancement of Hole-Injection Efﬁciency by
Utilizing a Novel P-Doping Step-Like Architecture
for Organic Light-Emitting Devices
C.-T. Tsai, S.-Y. Chu, P.-C. Kao*, Y.-H. Liu
Nat. Cheng Kung Univ., Taiwan*Nat. Chiayi Univ., Taiwan
This study demonstrated a step-like hole injecting architecture to
improve efﬁciency for OLEDs. A novel p-doping structure utilizing
combinations of two organic layers with different doping concentration
composed of MoO3 and NPB observed to facilitate hole-injection
therefore accomplished a maximum luminance of 31250 cd/m2 and asigniﬁcant increase in efﬁciency.
OLEDp1 - 22L Introduction of Nanoscatter Medium to Suppress
the Viewing Angle Dependence of Organic Light
Emitting Diodes with Strong Microcavity Effect
B. Pyo, H. S. Kim, M. C. Suh
Kyung Hee Univ., Korea
A nanoscatter layer was utilized to suppress the viewing angle
dependence of top-emitting organic light emitting diodes (TEOLEDs). It
could be controlled by its shapes such as concave and convex. It could
be optimized by applying thin ﬁlm encapsulation (TFE) on the top of
OLEDs device. The viewing angle dependence was diminished after
application of nanoscatter layer although the current efﬁciency
collected from the normal direction was reduced by 15~20%.

126

Thu. / Fri.

December 10 / 11

OLEDp1 - 23L ITO/Al-Ni Alloy Films for Anode Electrodes in
Top-Emission OLEDs
K. Nishiyama, N. Jiko, M. Ochi, T. Kugimiya, H. Okuno*,
M. Kanamaru*
Kobe Steel, Japan*Kobelco Res. Inst., Japan
We report Al-Ni-Cu-La anode electrodes for top-emission organic lightemitting diodes (OLEDs) enabling low driving voltage of OLEDs sameas Ag-Zn Alloy anode electrodes. The Al-Ni-Cu-La anode electrodesthat are annealed and alkaline cleaned can be directly contacted with
ITO by forming Al3Ni precipitates.
----- Lunch -----

Author Interviews and Demonstrations
19:00 – 19:40, Ohmi 6

Friday, December 11
9:00 - 10:00

Ohmi 2

OLED4: Advanced OLED Technologies II
Special Topics of Interest on Printed Electronics
T. Komatsu, JOLED, JapanT. Fukuda, Saitama Univ., Japan

OLED4 - 1
9:00

Solution-Processed All Phosphorescent Small
Molecule White Multi-OLED System
K. Oikawa, T. Iwasaki, T. Tsujimura, Y.-J. Pu*, T. Chiba*,
S. Ohisa*, J. Kido*
Konica Minolta, Japan*Yamagata Univ., JapanWhite light emitting multi-OLED with small-molecule allphosphorescent system comprising two light emitting units and acharge generating layer (CGL) has been successfully developed for theﬁrst time in the world. In this paper, our proprietary solution-based
process technologies, especially small-molecule phosphorescentmaterials and layer stack design technologies, will be discussed.

127

OLED

Chair:
Co-Chair:Friday
OLED4 - 2
9:20

December 11
Novel Materials for Highly Efﬁcient Long-Lived
Solution-Processed Phosphorescent Red OLED
Devices
A. Hayer, P. Stoessel, N. Koenen, H. Heil, P. Levermore,
B. Burkhart, K. Stegmaier, E. Böhm, H. Buchholz
Merck KGaA, Germany

We demonstrate highly efﬁcient, long-lived ink-jet printable red
phosphorescent materials. We show a series of new red emitters withhigh photoluminescence quantum efﬁciency, narrow spectra, excellent
stability and very good printability. We further improve device
performance by developing adapted hole transport layers.
OLED4 - 3
9:40

OLED Dry Film Uniformity Compensation by Inkjet
Process
C.-Y. Lin, C.-Y. Lo
Nat. Tsing Hua Univ., Taiwan

Dry-ﬁlm uniformity issue from wet-processed OLED because of thecoffee-ring effect was improved by compensating the ﬁrst inkjet-printed
PEDOT:PSS with a second inkjet-printed one. Compensation volume,
drop arrangement, and printing sequence were studied for optimized
and improved ﬁlm uniformity in this work.
----- Break ----10:40 - 12:00

Ohmi 2

OLED5/FLX3: Flexible OLED and OTFT
Chair:
Co-Chair:Y. Sakai, Mitsubishi Chem. S&T Res. Ctr., Japan
T. Kamata, AIST, Japan

OLED5/FLX3 - 1:
10:40

Invited Flexible OLED Fabricated with Fully R2R
Process and Their Evaluation Technology
Y. Mitamura, T. Minakata, A. Sugimoto, M. Tanamura,Y. Ohzu, A. Suzuki, N. Ibaraki, H. Tomiyasu
Chem. Materials Evaluation & Res. Base, Japan

Flexible organic light-emitting diodes (OLEDs) on continuous plastic
ﬁlm have been successfully fabricated with full roll-to-roll (R2R)
processes and exhibit good stability and high performance comparable
to OLEDs on glass. Degradation due to penetration of moisture havebeen studied qualitatively and respectively.

128

Friday
OLED5/FLX3 - 2
11:00

December 11
Accurate Evaluation of Water Vapor Transmission
for Flexible OLEDs
A. Suzuki, A. Uehigashi
Chem. Materials Evaluation & Res. Base, JapanAn evaluation technique for determining the water vapor transmission
rate (WVTR) has been developed using our reference ﬁlms withmultiple pinholes created strategically. The WVTR was reliably obtained
at a level of 10­5 g/m2/day. The ﬁlms can be widely applied to accurately
calibrate several WVTR measurement systems.
OLED5/FLX3 - 3

Withdrawn

OLED5/FLX3 - 5L
11:20

Solution-Processed, Air-Stable N-Type Organic
Single Crystal Microribbon Transistors
C.-Y. Tan, P.-Y. Tseng, C.-W. Wang, C.-Y. Hung,
C.-W. Tsai, G.-W. Hsieh
Nat. Chiao Tung Univ., Taiwan

We used halogen-substituted perylene diimide derivatives to form selfassembled microribbons for organic ﬁeld effect transistors. Devices
based on a network of microribbons have showed typical n-channelﬁeld effect behaviors with average ON/OFF current ratio >103 andrevealed remarkable stability under ambient air over 90 days.
OLED5/FLX3 - 4
11:40

Solution Processed P-Type Top-Gate SmallMolecular Organic TFT
H.-C. Hsiao, Z.-X. Jiang, S. Su, H.-Y. Xu, M. Zeng,
B. Sun, C.-Y. Lee, H. Zhou*, S. Zhang*

OLED

China Star Optoelect. Tech., China*Peking Univ., China
A p-type organic thin ﬁlm transistor (OTFT) technology on plastic
substrates was developed, in which, a small molecular organic
semiconductor (OSC) material was used as channel layer. The
fabricated p-OTFT at processed temperature below 120 C shows ahigh hole mobility of 3.4 cm2/Vs and an excellent performance stability
under gate electrical stress.
Author Interviews and Demonstrations
12:00 – 12:40, Ohmi 6----- Lunch -----

Supporting Organizations:
The Japanese Society of Printing Science and Technology
The Society of Photography and Imaging of Japan

129

Thursday

December 10

Workshop on 3D/Hyper-Realistic
Displays and Systems
Thursday, December 10
9:00 - 10:20

Ohmi 93D1: Holography
Chair:
Co-Chair:

M. Date, NTT, JapanT. Koike, Hosei Univ., Japan

3D1 - 1:
9:00

Invited Occlusion Processing in Computer Holography– With a Focus on Switch-Back Technique –K. Matsushima
Kansai Univ., Japan

A powerful technique called the switch-back technique is presented for
occlusion processing. The technique allows us to process polygon-bypolygon light-shielding very fast. The computation times for various
sizes of computer-generated holograms as well as opticalreconstruction are presented for verifying the performance and validityof the technique.
Also presented in Innovative Demonstration Session (see p. 206)
3D1 - 2:
9:20

Invited Electronic Holography Using Multiple Spatial
Light Modulators
H. Sasaki, K. Wakunami, Y. Ichihashi, R. Oi, T. Senoh,
K. Yamamoto
NICT, Japan

We introduce methods of using multiple SLMs to increase the size of
3D images that are displayed using electronic holography andcompensation for luminance differences between these SLMs. We
apply these methods to a 16 (4 4) 4K 2K-pixel SLM-system toimprove the image quality of a large full-parallax holographic threedimensional image.
3D1 - 3
9:40

Moire Noise Reduction in the Off-Axis Holographic
Display
W. Seo, J. Seo, H. Song, J. An, G. Sung, S. Kim,
C.-S. Choi, H. Kim, Y.-T. Kim, Y. Kim, H.-S. Lee,S. Hwang
Samsung Advanced Inst. of Tech., Korea

We realized a 10.1-in. off-axis holographic display with viewing
distance 1 m and maximum depth over 50 cm. To reduce the Moirenoise, which is the typical problem in the off-axis digital reconstruction
method using RGB stripe pixels, we introduced 1) multi-frame
sequences and 2) the same modulation period for RGB colors.

130Thursday
3D1 - 4:10:00

December 10
Invited Lensless Holographic Projection and Its
Related WorkT. Shimobaba, Y. Nagahama, T. Kakue, T. Ito
Chiba Univ., JapanWe describe our latest results for holographic projection, including
lensless zoomable holographic projection, the speckle reduction
technique which is named random phase-free method, and color
zoomable holographic projection with the random phase-free method
and color space conversion method in order to increase the image
quality and accelerate the calculation time.
----- Break ----10:30 - 12:30

Ohmi 6

Poster 3Dp1: 3D/Hyper-Realistic Displays
3Dp1 - 1

Optical Design of the Stereo Imaging Capsule
Endoscopy System
C.-H. Lin*, K.-Y. Hsu*, C.-Y. Chen, B.-S. Lin**, P.-J. Wu**Nat. Taiwan Univ. of S&T, Taiwan*Nat. Yunlin Univ. of S&T, Taiwan**Nat. Chiao Tung Univ., Taiwan

With the spectral characteristics of a micro-prism array plate, the left/right stereo image pair could be acquired merely by using a single lens
block-shoot in the capsule endoscopy system. The acquired stereo
image pair is further proceeded the depth analysis to make up theinsufﬁcient depth information.
3Dp1 - 2

Waving-Hand Steganography on Aerial LED Screen
Formed with AIRR
M. Takahashi*, H. Yamamoto*,***Utsunomiya Univ., Japan**JST, CREST, Japan

3Dp1 - 3

A Proposal for Objective Evaluation System for
Optical and Electro-Optical Characteristics of
See-Through Type Near-Eye Display Devices
Y. Tang, Y. Yang, Y. Zheng, X. Li, B. Wang
Southeast Univ., China

An objective evaluation system with multiple characteristics and theirtest methods is required for the emerging near-eye display devices. A
proposal with four types of characteristics is proposed, which arecommon display type, transparent display type, binocular convergencetype and near-eye display type.
131

3D

We propose a kind of steganography on aerial LED screen. Our
proposed steganography employs a high-frame-rate LED display toembed a secret image in successive 16 ﬁelds that are changed at 960
Hz. Then, our aerial imaging technology is used the retro-reﬂective
material and a half mirror.

Thursday
3Dp1 - 4

December 10
Comparisons of Viewing Depth Enhancement in
Integral Imaging System Operated with Double Lens
Arrays and Double Liquid Crystal Lens Arrays
W.-Y. Lu, C.-R. Sheu
Nat. Cheng Kung Univ., Taiwan

The capability of viewing depth is an important factor in integral
imaging (InIm) system. In this study, double lens arrays are used toenhance the range of viewing depth. In addition, we compare theoperation with double lens arrays and double liquid crystal lens arrays.
3Dp1 - 5

Depth Evaluation from Monocular Motion Parallax
by Passive Head Movement with Different
Amplitudes
K. Oko, S. Yamada, H. Mizushina, S. Suyama
Tokushima Univ., Japan

Perceived depth differences of motion parallax between by active head
movement and by passive head movement have been estimated.
Perceived depth by passive head movement is almost the same as one
by active head movement, which can provide a 3D impact tostereoblind people by only monocular motion parallax.
3Dp1 - 6

How to Converge Long Wave-Length Sound by
Small-Aperture Crossed-Mirror Array
R. Kujime*, H. Mizushina*,**, S. Suyama*,
H. Yamamoto*,***Tokushima Univ., Japan**Utsunomiya Univ., Japan

We can successfully converge much longer wave-length sound thanaperture size of crossed-mirror array (CMA) by using ultrasounds for
carrier wave. Although CMA usually needs to have much larger
aperture than its wave length for converging sound wave, this proposed
method can converge very long wave-length sound by small-aperture
CMA.
3Dp1 - 7

Multi-Image Arc 3D Display with Narrow Scratches
by Using Non-Overlapping Method at Cross Points
S. Nishiyama, H. Mizushina, S. Suyama
Tokushima Univ., Japan

We proposed Multi-image Arc 3D display which can change various 3D
images by using projector. Multi-image Arc 3D display can successfully
switch three 3D images by changing the illuminating arcs. 3D image
spot size on the arc can be decreased to less than 1 mm in Multiimage Arc 3D display.

132

Thursday
3Dp1 - 8

December 10
Wide Vertical Viewing Zone in Arc DFD (DepthFused 3D) Display
K. Yoshioka, S. Nishiyama, H. Mizushina, S. Suyama
Tokushima Univ., Japan

We have proposed a new arc DFD display by the fusion of DFD display
and arc 3D display. This new display has merits of compact, simple andthinner structure and large depth. In this paper, we evaluated verticalviewing zone in arc DFD display, resulting in wide vertical viewing zone.
Also presented in Innovative Demonstration Session (see p. 207)
3Dp1 - 9

Stereoscopic Display by Using a New Radial
Parallax Barrier for All Surrounding Viewpoints
R. Ozaki, H. Yamamoto*, H. Mizushina, S. Suyama
Tokushima Univ., Japan*Utsunomiya Univ., Japan

In order to realize stereoscopic display for all surrounding viewpoints, a
new circularly conﬁguration with a radial parallax barrier has been
proposed. Six-view auto-stereoscopic images can be successfully
obtained by continuous change of stereoscopic images andcorresponding area of parallax barrier, which is the fundamental results
for all surrounding view.
3Dp1 - 10

An Autostereoscopic Display Combining Parallax
Barrier and Volumetric Images Using Non-Negative
Edge Filter
B. Yu, H. Kakeya
Univ. of Tsukuba, Japan

We propose an autostereoscopic display system based on parallax
barrier and volumetric imaging. The proposed system detects theviewerʼs eyes and the layered images are adjusted so that they may
reproduce the original image. The use of non-negative edge ﬁlter
mitigates image deterioration due to eye-tracking delay.
Also presented in Innovative Demonstration Session (see p. 207)
Rendering Architecture for Photorealistic
Simulation of Light Field Display

3D

3Dp1 - 11

T. Koike
Hosei Univ., Japan
We discuss about a rendering architecture for photorealistic simulationof light ﬁeld display. We use path tracing to render sub images for eachlens, and merge these sub images to a ﬁnal photorealistic image. We
have also compared rendering times and images between existing
method and our method.

133

Thursday

December 10

3Dp1 - 12

Tunable Magniﬁcation of Fourier Hologram by Usinga Zoom Lens
S.-K. Lin, W. K. Lin, W.-C. Su
Nat. Changhua Univ. of Education, Taiwan

A hologram is reconstructed on the Fourier plane of a zoom lens. Bychanging the effective focal length of the zoom lens, the magniﬁcationof the holographic image becomes tunable without changing its image
location.
3Dp1 - 13

Improvement of Reconstructed Image Quality of 3D
Display Using 1D Phase Modulation SLM by
Iterative Fresnel Method
R. Toritani, K. Masuda, P. Xia, K. Nitta, O. Matoba
Kobe Univ., JapanA three-dimensional display using a phase-mode 1D spatial light
modulator is proposed. Optimization of phase distribution by using
iterative Fresnel method and a dummy area can improve thereconstructed image quality. Numerical results show that the contrast of
the reconstructed image is improve.
3Dp1 - 14

Improvement of Image Quality of Three-Dimensional
Display Using a Binary Phase Distribution
K. Masuda, Y. Saita, R. Toritani, P. Xia, K. Nitta,
O. Matoba
Kobe Univ., Japan

A method to improve the quality of the reconstructed 3D image byusing a binary phase distribution is presented. The proposed method
consists of two sub-methods that are the optimization of binary phase
distribution by modiﬁed Fresnel ping-pong algorithm and temporally
average of the speckle patterns. The results are presented.
3Dp1 - 15

A Naked-Eye 3D Display Using Liquid Crystal
Lenticular Lens with Low Cell Gap
J.-H. Chen, Q.-S. Liao, Q. Wei, C.-M. Yang, C.-Y. Chiu,
C.-Y. Lee, A. Lien*
Shenzhen China Star Optoelect. Tech., China*TCL Corporate Res., China

A 32” naked-eye 2D/3D display with 4K panel using Liquid-crystalLenticular (LCL) lens was fabricated. To be compatible with photoprocess and decrease 2D/3D switching time, cell gap was designed as
6.2 Mm, and to overcome electric ﬁeld inefﬁciency triggered by low cellgap, multi-electrode driven mode was employed.

134Thursday
3Dp1 - 16

December 10
A Novel Driving System for AMOLED 3D Display
H. Li, Y. Jin, S.-S. Syu, M.-J. Jou
Shenzhen China Star Optoelect. Tech., China

Most of 3D system solutions suffer problems including ﬂicker, highframe rate and loss of luminance. CSOT will illustrate a novel 3D
driving architecture to improve luminance with lower frame rate that
can also reduce system complexity and total power consumption in
paper.
3Dp1 - 17

Developing a Quality Normal Map Acquisition
Device Based On LED Array
C.-H. Wang, Y.-L. Liu, T.-H. Lin
Nat. Taiwan Univ. of S&T, Taiwan

This study focuses on how to general normal map from a selffabricated device. A normal map indicates the local surface geometry
which is stored as R-G-B pixels to represent local [x, y, z] vectors.
Therefore, we propose a practical solution to directly retrieve image
channels with corresponding lighting sources to synthesize a quality
normal map.
3Dp1 - 18L

Real-Time Electroholography Using Multi-GPU
Cluster System with a Single Spatial Light
Modulator and Inﬁniband Network
N. Takada, H. Niwase, H. Araki, Y. Maeda, M. Fujiwara,
H. Nakayama*, T. Kakue**, T. Shimobaba**, T. Ito**
Kochi Univ., Japan*Nat. Astronomical Observatory of Japan, Japan**Chiba Univ., Japan

The practical use of electroholography is limited by the complexity ofthecomputer-generated
hologram. We
proposereal-timeelectroholography using the multi-GPU cluster system with 13 GPUs
(NVIDIA GeForce GTX TITAN X). Finally, we succeed to display
reconstructed 3D movie consisting of 95,949 object points at about 30
fps.

3D

3Dp1 - 19L

Gradation Expression of Time-Division Color
Electroholography Using LCD Panels
M. Fujiwara, N. Takada, H. Araki, H. Niwase, Y. Maeda,
S. Ikawa, H. Nakayama*, T. Kakue**, T. Shimobaba**,
T. Ito**Kochi Univ., Japan*Ctr. for Computational Astrophysics, Japan**Chiba Univ., Japan

Electroholography requires grayscale representation of reconstructed
3D image to realize 3D television. We propose gradation representationof reconstructed 3D image from the binary hologram drawn in blackand gray on bit-plane. Finally, we succeed to display color gradation 3D
image reconstructed by the proposed method.

135

Thursday

December 10

3Dp1 - 20L

Image Quality Improvement of Electroholography by
Using Spatiotemporal Division Method
Y. Maeda, N. Takada, H. Niwase, H. Araki, M. Fujiwara,
S. Ikawa, H. Nakayama*, T. Kakue**, T. Shimobaba**,
T. Ito**Kochi Univ., Japan*Ctr. for Computational Astrophysics, Japan**Chiba Univ., Japan

We propose spatiotemporal division electro-holography for highdeﬁnition reconstruction of 3D object composed of huge number object
points. Finally, we succeed to display a reconstructed high-deﬁnition
image and movie of 3D object consisting of about 900,000 points.
3Dp1 - 21L

Design and Light Modulation of Sub-micron LC
Pixels with Dielectric Shield Walls for Wide-Angle
Holographic Displays
Y. Isomae, T. Ishinabe, H. Fujikake
Tohoku Univ., JapanTo achieve electric holographic displays with wide ﬁeld of view, it isnecessary to fabricate sub-micron pixel structures. To suppress fringe
electric ﬁeld leakage, we have proposed dielectric shield wall
structures. In this paper, we discussed effects of the wall structures on
the reconstructed images and alignment of LC.
3Dp1 - 22L

The Effects of Crosstalk on Fusion and Protrusionof Stereoscopic Image
S. Chou, T. Yamakawa, F. Kinoshita, T. Kojima*, M. Miyao
Nagoya Univ., Japan*Chubu Gakuin Univ., Japan

We carried out an experiment to evaluate the inﬂuence of crosstalk on
stereoscopic images. During the experiment, subjects subjectively
judged the protrusion of images under different crosstalk ratios. This
study found a relationship between the limit of fusion, protrusion andthe crosstalk ratios.
3Dp1 - 23L

Using Auxiliary Images to Extend the Fusional
Limits For Stereoscopic Images
S. Kamino, T. Yamakawa, F. Kinoshita, C. Uneme,
T. Kojima*, M. Miyao
Nagoya Univ., Japan*Chubu Gakuin Univ., Japan

In this study, we conduct an experiment with 104 participants, to show
using auxiliary images are useful to extend the fusional limits ofstereoscopic images. The experiment showed how much the fusional
limit was increased by using auxiliary images.

136Thursday
3Dp1 - 24L

December 10
The Training Effect to the Fusional Limit of
Stereoscopic Images
T. Yamakawa, Y. Honda, F. Kinoshita, I. Morita,
T. Kojima*, M. Miyao
Nagoya Univ., Japan*Chubu Gakuin Univ., Japan

There is variation in the fusional limit that people can recognize fromthe protrusion of stereoscopic images. The fusional limit is different
depending on personal experience. In this study, we veriﬁed that an
observerʼs fusional limit with stereoscopic images can be improved
with visual training.
3Dp1 - 25L

Veriﬁcation of Image Distance in a Projection Type
Virtual Image Display Using Lens Array
T. Iwaya, T. Yendo
Nagaoka Univ. of Tech., Japan

Head Up Display (HUD) is promising to be a key device of AR on
automobile. However conventional HUD has not sufﬁcient viewing ﬁeld
because of single-axis optics of imaging. We propose a novel HUD
using small caliber optics. In this paper, we conﬁrm the virtual image islocated at inﬁnite distance.
3Dp1 - 26L

Elemental Images Resizing Method to Compress
Integral Three-dimensional Image Using 3D-HEVC
K. Hara, J. Arai, M. Kawakita, T. Mishina
NHK, Japan

We propose a method for changing the sizes of elemental images
based on an integer multiple before coding. The method was evaluatedusing the PSNR and subjectively evaluated using the MOS of coded
integral 3D images using 3D-HEVC. The results suggest the proposed
method is superior to a conventional method.
3Dp1 - 27L

The Accommodation Responses for Still Imagesof Integral Photography

3D

H. Imai, Y. Katayose, S. Yano, M.-C. Park*
Shimane Univ., Japan*KIST, Korea
In integral photography, three-dimensional images are displayed basedon the principle of light ﬁeld reproduction. For this reason, it is said thatthe conﬂict between convergence and accommodation is not aroused.
We examined the accommodation response for still images of integral
photography.

137

Thursday
3Dp1 - 28L

December 10
Evaluation of Autostereoscopic Imaging
Performance with Respect to Color Sub-pixel
Arrangements via Computer Graphic Processes
Y. W. Chen, L. Y. Wu, C. R. Sheu
Nat. Cheng Kung Univ., Taiwan

In this paper, parallax images for usage of lenticular lens
autostereoscopic simulation were generated by computer graphic
processes, which were further used to evaluate autostereoscopic
imaging performance with respect to various sub-pixel arrangements.
Generally, it shows better distinguishability to evaluate imaging
performance than previous work by camera recording parallax images.
3Dp1 - 29L

Study on the Implementation of the Low Cross-Talk
Glasses-Free 3D Display
K. Choi, J.-H. Lee, Y. Choi, D. Nam
Samsung Elect., Korea

This article investigates the cause of the 3D cross-talk explains how tominimize the 3D cross-talk when realizing a 3D image in a glasses-free
3D display system. In particular, the article presents an optimal light
output pattern in which light goes through a 3D optical plate with theresulting 3D spatial light distribution minimizing cross-talk.
3Dp1 - 30L

Study on Generating Binary Colors for Monochrome
3D Intraoral Laser Scanner
Y.-L. Liu, Y.-C. Chen, T.-H. Lin, P.-C. Hu*
Nat. Taiwan Univ. of S&T, Taiwan*Metal Inds. R&D Ctr., Taiwan

Nowadays, the intraoral scanner has become more and more popularfor orthodontic treatment. However, most of current intraoral scanners
canʼt automatically recognize the difference between the crown andgingiva. In this paper, we present an intensity compensation method toseparate the crow and gingiva.

138

Thursday
3Dp1 - 31L

December 10
Virtual Reality/Head-Up Display Systems Using
Smart Phones
K. Li
Wavien, USA

Many smart phones have built-in gyroscope and GPS capabilities. This
paper describes optical systems making use of the built-in GPS andgyroscope functions of smart phones and allows them to be used in
Head-Up-Displays (HUD) and Virtual Reality Displays (VRD)
applications.
3Dp1 - 32L

A Novel LED Display Architecture Using 4 Color
Sub-Pixel Rendering
D.-S. Kim, T. Shigeta, S.-K. Im, H.-S. Lee
Samsung Elect., Korea

We have developed a novel LED display architecture with RGGB 4
sub-pixels rendering. LED light control ﬁlter algorithm is proposed inorder to reduce color fringes by sub-pixel rendering which is a methodof perceptual enhancement. The results show that it has 2 times higher
perceptual resolution without artifacts.
----- Lunch ----16:00 - 17:25

Ohmi 93D2/LCT3: Autostereoscopic 3D Displays
Chair:
Co-Chair:Y. Kuroki, Comfort Vision Res. Lab., JapanS. Oka, Japan Display, Japan

3D2/
LCT3 - 1:
16:00

Invited LC GRIN Lens Technology for MultiFunctional 3D Display
S. Uehara
Toshiba, Japan

139

3D

An LC GRIN lens is a signiﬁcant component for 2D/3D display,
because the lens function is easily changed due to an electrode designand driving method. We introduce our recent developments of threecore technologies for the LC GRIN lens, those are, LC lens mode,
driving method, and electrode structure.

Thursday
3D2/
LCT3 - 2
16:25

December 10
Video Capable Dual-Layer Autostereoscopic Display
with Motion Parallax
H. Suginohara, M. Sugano, K. Minami
Mitsubishi Elec., Japan

We have developed the prototype of video capable dual-layer
autostereoscopic display. We implement Depth-Image-Based
Rendering in an FPGA so that we can render the dual-layered
individual viewpoint video following the viewer position in real-time. Our
prototype can display a 3D video with motion parallax within +/- 20
degrees viewing area.
3D2/
LCT3 - 3
16:45

Resolution Multiplication Method for
Autostereoscopic 3D Display
F. Mukhtarov, S. D. Hwang
Samsung Elect., Korea

In this paper we present new resolution multiplication methods for
Displays, based on controllable variations of refractive index of liquid
crystal prism array. Simultaneously with index variations the displayedcontents need to be updated in time-sequential mode. Initial tests showpromising results for both 2D and 3D types of displays.
3D2/
LCT3 - 4
17:05

Wide Viewing Angle Autostereoscopic 3D Display
with Eye-Tracking System
Y. Hyodo, S. Oka, T. Koito, H. Sugiyama, Y. Maede,
T. Ochiai, T. Takahashi, S. Komura
Japan Display, JapanA new eye-tracking 3D panel was developed by smoothing the motionof a liquid crystal (LC) active barrier and by reducing crosstalk using
new designs of supporting electrodes in the barrier and in-planeswitching electrode of an LC panel. We demonstrated excellent visibility
in a 3D viewing zone.
Also presented in Innovative Demonstration Session (see p. 206)----- Break -----

140

Thursday

December 10

17:40 - 19:00

Ohmi 93D3: Wavefront/Light Field Recording and Rendering
Chair:
Co-Chair:T. Shimobaba, Chiba Univ., Japan
J. Arai, NHK, Japan

3D3 - 1
17:40

Acceleration of Computer-Generated Hologram by
Optimizing Arrangement of Wavefront Recording
PlanesN. Hasegawa, T. Shimobaba, T. Kakue, T. Ito
Chiba Univ., Japan

In a three-dimensional display by computer-generated holograms(CGHs), fast CGH calculation is required. The wavefront recording
plane (WRP) method is able to reduce the calculation amount byplacing WRPs in the vicinity of an object. In this paper, we optimized
arrangement of WRPs to accelerate CGH generation.
3D3 - 2
18:00

Fast Calculation of Stereoscopic Viewpoints via
Fourier Slice Transformation
J. Zhao*, J. Xia*, C. Chen*, Z. Yang**, J. Chen***Southeast Univ., China**China Star Optoelect. Tech., China

We propose a method of calculating the multiple viewpoints for autostereoscopic display based on Fourier slice theorem. A set of twodimensional (2D) projection images were recovered from a 2D image
and a depth mapping. The proposed method was operated in thefrequency domain, so that the algorithm was much faster.
3D3 - 3
18:20

Light Field Subpixel Rendering Framework on
Special Subpixel Structures
J. Park, D.-K. Nam
Samsung Elect., Korea

3D3 - 4
18:40

Increased Perspective Size of Light Field Cameras
Using a Reﬂector System
K. Li
Wavien, USA

The perspective size of the light ﬁeld camera is limited by the pupil sizeof the camera lens. In this paper, a reﬂector system will be presented
such that the pupil size of the camera lens is increased by large
reﬂectors such that a larger perspective size can be achieved.
Author Interviews and Demonstrations
19:00 – 19:40, Ohmi 6
141

3DRecently, various subpixel structures like PenTile are introduced frommobile to TV devices. Light ﬁeld subpixel rendering for displays
comprised with those special subpixel structures need to consider
more than subpixel structure conversion. We propose a light ﬁeld
subpixel rendering framework on those special subpixel structures.

Friday

December 11
Friday, December 11

9:00 - 10:20

Ohmi 9

3D4/VHF6: Autostereoscopic and Head-Mounted Displays
Special Topics of Interest on Augmented Reality and Virtual Reality
Chair:
Co-Chair:Y. Takaki, Tokyo Univ. of A&T, Japan
S. Uehara, Toshiba, Japan

3D4/
VHF6 - 1
9:00

HaptoMIRAGE: An Active-Shuttered Real Imaged
Auto-Stereoscopic Display
Y. Ueda, H. Nii*, K. Minamizawa, S. Tachi**
Keio Univ., Japan*IIJ Innovation Inst., Japan**Univ. of Tokyo, Japan

HaptoMIRAGE is an auto-stereoscopic display that does not require
the viewer to wear devices like 3D glasses. it is convenient to produce
content such that real objects and 3D virtual objects are combined.
Furthermore, multiple users can share the 3D view from theirrespective viewpoints.
3D4/
VHF6 - 2
9:20

Dual Orthogonal Flat Panel Autostereoscopic
Display Using Visible Gap Contraction Prism
H. Imai, N. Takanashi
NEC, Japan

We have developed a dual orthogonal ﬂat panel autostereoscopic
display using visible gap contraction prism. Since the prism contracts
the visible gap region between two orthogonal panels optically, it ispossible to diminish visual discomfort for viewer in observing
stereoscopic images.
3D4/
VHF6 - 3
9:40

Sense of Height and Virtual Body in Head-Mounted
Display Environments
T. Shibata, T. Inoue*
Tokyo Univ. of Social Welfare, Japan*Kanagawa Inst. of Tech., Japan

When using a head-mounted display, we cannot see our own body. We
conducted an experiment to evaluate effects of virtual body on theuserʼs sense of height and fear of heights. The results showed that thevirtual body increased the user sense of height slightly and fear ofheights signiﬁcantly.

142

Friday
3D4/
VHF6 - 4
10:00

December 11
Development of Poor Man’s 3D-AR Platform for
Amateur Game Creators
Y. Yoneda, E. Dong, T. Fujita, H. Kiriyama, K. Takemura,
K. Iwasaki, R. Urushihara*, T. Ichii
Tokyo Inst. of Tech., Japan*Ochanomizu Univ., JapanFor 3D-AR by amateur creators, development of a low-cost and easy touse platform is necessary. The system should be composed of low-cost
devices such as tablet-PCs and USB-cameras. However, theperformance of each device is low. We'll show the way to cover the
performance by combination of available sensors.
Also presented in Innovative Demonstration Session (see p. 206)----- Break ----10:40 - 12:00

Ohmi 93D5: 3D/Hyper-Realistic Display Systems
Special Topics of Interest on Augmented Reality and Virtual Reality
Chair:
Co-Chair:H. Sasaki, NICT, Japan
M. Tsuchida, NTT, Japan

3D5 - 1:
10:40

Invited 2D/3D Compatible Microstereopsis Display
Using Patterned Retarder 4KTV
Y. Kuroki
Comfort Vision Res. Lab., JapanThe effectiveness of good depth perception with microstereopsis video
images of a 4KTV with patterned retarders was conﬁrmed. This
enables group viewing by persons wearing and without 3D-glasses.
This development will lead toward the wide use of 2D/3D compatible
motion images with low cost at high resolutions such as 8K.
3D5 - 2:
11:00

3D

Invited See-Through Three-Dimensional Displayswith Motion Parallax for Precise Image
Superposition
Y. Takaki
Tokyo Univ. of A&T, Japan

See-through displays can render digital information on real scenes.
When see-through displays provide three-dimensional (3D) images
having motion parallax, 3D images can be precisely superimposed onreal objects. Two see-through displays with motion parallax aredemonstrated: the super multi-view windshield display and the seethrough integral imaging display.

143

Friday
3D5 - 3:
11:20

December 11
Invited See-Through Projection System
T. Higuchi, T. Yoshikawa, K. Hashikawa, M. Akagi,
T. Yoshizawa, K. Iwawaki, Y. Ito, H. Kogoma, N. Saegusa
Pioneer, JapanWe developed a new display system, “See-through projection system”,
consist of a projector and a transparent screen. Our system can beseen both bright images on the screen and the background images
through the screen. We introduce applications of See-throughprojection system.
3D5 - 4:
11:40

Invited Floating Image Display Based on a Dihedral
Corner Reﬂector Array
Y. Maeda
Parity Innovations, Japan

A ﬂoating image display using a dihedral corner reﬂector array, whichforms distortion-free real image based on retro-reﬂection, and its
applications are introduced as a future multimedia device. In one
instance, an observer can see a ﬂoating image by the naked eye andmanipulate it by touching the ﬂoating image.
Also presented in Innovative Demonstration Session (see p. 206)
Author Interviews and Demonstrations
12:00 – 12:40, Ohmi 6----- Lunch ----13:30 - 14:50

Ohmi 93D6: Floating and Omnidirectional Display Systems
Chair:
Co-Chair:Y. Maeda, Parity Innovations, JapanK. Yamamoto, NICT, Japan

3D6 - 1
13:30

Evaluation Method of Sharpness on Aerial Image
Formed with AIRR
N. Kawagishi*,**, H. Yamamoto**Utsunomiya Univ., Japan**Yazaki, Japan

This paper proposes a method to evaluate sharpness on aerial image
that is formed with aerial imaging by retro-reﬂection (AIRR). The
proposed method employs calculation of contrast transfer function(CTF) on recorded aerial image with a camera. Performance of retroreﬂectors is evaluated with CTF curves. Furthermore, F-number
dependency is investigated.

144

Friday

December 11

3D6 - 2
13:50

Aerial Imaging by Retro-Reﬂection with Transparent
Retro-Reﬂector (AIRR with TRR)
Y. Tokuda*,**, K. Onuki*, M. Takahashi*, S. Onose*,
T. Okamoto*, M. Hirose**, H. Yamamoto*,****Utsunomiya Univ., Japan**Univ. of Tokyo, Japan***CREST, Japan

We propose a novel design of aerial displays. Our proposed design
employs a transparent retro-reﬂector (TRR) for aerial imaging by retroreﬂection (AIRR). AIRR with TRR can reduce a hardware space.
Furthermore, AIRR with TRR can show images on TRR planes andcan realize both a dual-view and dual-layered aerial display.
Also presented in Innovative Demonstration Session (see p. 206)
3D6 - 3
14:10

Superimposed 3D Display Viewable from 360
Degrees
H. Kato, T. Yendo
Nagaoka Univ. of Tech., Japan

We propose a novel 3D display that 3D image can be superimposed on
the real object, and viewable from 360 degrees. The display consist ofhigh speed projector and rotating thin strip of mirror.
Also presented in Innovative Demonstration Session (see p. 206)
3D6 - 4
14:30

A Method to Make 360 Degree Contents for Realistic
3D Image Display Using Direct Light Scanning
X. Luo, H. Horimai*, X. Tan
Beijing Inst. of Tech., China*3Dragons, JapanThe realistic 3D image display using Direct Light Scanning Method, socalled Holo-Table have been introduced last year. In this paper, animage processing method for the Holo-Table is proposed. Real parallax
images from a 360 degree scanning camera are used, and a 3D scenefrom any directions can be displayed.
Also presented in Innovative Demonstration Session (see p. 207)

3D----- Break ----Author Interviews and Demonstrations
18:10 – 18:50, Ohmi 6
Supporting Organizations:
Holographic Display Artists and Engineers Club (HODIC),The Optical Society of Japan
Technical Group on Three-Dimensional Image Technology, ITE

145

Wednesday

December 9

Workshop on
Applied Vision and Human Factors
Wednesday, December 9
13:30 - 14:55

Ohmi 7

VHF1: Display Metrology
Chair:
Co-Chair:J. Bergquist, Nokia, Japan
N. Hiruma, NHK, Japan

VHF1 - 1:
13:30

Invited Metric for Quantifying Relative Display
Gamut Size
K. Masaoka
NHK, JapanThe Rec. 2020 area-coverage ratios for wide-gamut displays in the xy
chromaticity diagram are much more correlated to the volumecoverage ratios in color-appearance spaces than the area-coverage
ratios in the u v chromaticity diagram. We recommend a single metricusing the xy diagram for calculation of the Rec. 2020 area-coverage
ratio.
VHF1 - 2
14:00

Characterization of the Spectral BRDF & BTDF of
Optical Components for Displays and Lightings
P. Boher, T. Leroux, V. Collomb-Patton, T. Bignon
ELDIM, France

Realistic optical simulation of the stack of a LC display requires theaccurate and easy to obtain optical properties of each of its
components. In the present paper we show how to obtain rapidly thespectral BRDF and BTDF of different display components using Fourier
optics system with different illumination conﬁgurations.
VHF1 - 3
14:20

Near-Field Analysis on Curved AMOLED Display by
Directional Imaging Photometric Measurements
S.-W. Hsu, Z.-Y. Chung
ITRI, Taiwan

By a method based on directional imaging photometric measurements
and near-ﬁeld analyses, the photometric properties of curved AMOLED
display can be widely studied. The dependences of tri-stimulus values
on vertical photometric angle, photometric azimuth and surface
coordinates were carried out and investigated on a demonstrated
sample.

146

Wednesday
VHF1 - 4L
14:40

December 9
Novel Sparkling Quantiﬁcation Method on TFT LCD
at Off-axis Viewing Angle
Y.-H. Chiang, T.-W. Hsu, S.-C. Lin, C.-H. Liao, J.-J. Su
AU Optronics, Taiwan----- Break ----15:10 - 16:25

Ohmi 7

VHF2: Display Image Quality
Chair:
Co-Chair:T. Kurita, NHK Media Tech., Japan
K. Sakamoto, Panasonic, Japan

VHF2 - 1
15:10

Image Quality Comparison between ULED and
OLED Based on Perception Study
J. Wang, J. Cao*, X. Li, W. Liu*, J. Yang*, S. Huang*,
Y. Zhang*, S. Gao*Southeast Univ., China*Hisense Elec., China

A perception experiment using pair-comparing method is designed andconducted to compare the performance between OLED and ULED indifferent image quality evaluation items. Due to different display
mechanism, the two types of technologies show advantages against
the other in dark scene and bright scene respectively.
VHF2 - 2
15:30

High Visual Performance of Transparent Liquid
Crystal Display by Using Image Optimization
C.-T. Su, C.-W. Su, J.-T. Lien
Chunghwa Picture Tubes, Taiwan

In this paper, the image quality has succeeded to enhance of 6.1-in.
transparent display by using image ﬁrmware analysis. Moreover,comparing the image optimization for purity, gamma, photometric
exposure and sharpness was studied. Our results demonstrate asigniﬁcant different from each parameter adjustment, which reveal agreat potential property.

147

VHF

An innovative sparkling quantiﬁcation CCD system at off-axis viewing
angle with excellent human factor correlations has been built up. The
CCD measurement result not merely shows exceedingly high linear
relationship with a great number of human eye observation results, butshows greater degree of consistency than human eye.

Wed. / Thu.

December 9 / 10

VHF2 - 3
15:50

An Algorithm of Backlight Mura Reduction for
Direct-Lit LEDs
P. S. Kuo, Y. H. Fu, W. Q. Zhao, H. Zhang, J. W. He,
L. W. Chu, Y. Y. Chen
Shenzhen China Star Optoelect. Tech., China

The penetration rate of direct-lit LEDs begins to transcend the edge-lit
LEDs in 2014. For the sake of further shrinkage of the module
thickness, an algorithm for reducing backlight mura of direct-lit LEDs is
proposed in the ﬁrst time. A quantiﬁcation procedure of backlight murais also described.
VHF2 - 4L
16:10

Implications of the Number of Local Dimming Zones
and Native LCD Contrast on Visual Quality of HDR
Displays
D. M. Hoffman, N. Stepien, W. Xiong
Samsung Display, USA

We used a paired comparison methodology on an RGB OLED panel tocreate image quality emulations of HDR displays based on liquid
crystal with local dimming. The native panel contrast was mostimportant for visual quality. Increasing local dimming zone count had acomparatively modest impact on image quality.
Author Interviews and Demonstrations
16:30 – 17:10, Ohmi 6

Thursday, December 10
9:00 - 10:35

Hiei

VHF3: Human Factors
Chair:
Co-Chair:Y. Hisatake, Japan Display, Japan
T. Shibata, Tokyo Univ. of Social Welfare, Japan

VHF3 - 1:
9:00

Invited Aging of the Eye and Vision Centered Designof Display
T. Kawamorita
Kitasato Univ., Japan

Age-related optical and physiological changes in the eye produce
progressive reduction in visual performance. The reduction in visualperformance cause decrease of readability and legibility of display. My
presentation will discuss the aging of the eye, especially opticalstructure and properties, and the vision centered design of electronic
display.

148

Thursday
VHF3 - 2
9:30

December 10
Visual Characteristics of After-Image under Dark
Surround Conditions
H.-C. Li, P.-L. Sun, R. Luo
Nat. Taiwan Univ. of S&T, Taiwan

VHF3 - 3
9:50

Cosmetic Color Mapping Technology Applying toFacial Images
L. Lu, Y.-P. Pi, H.-S. Chen
Nat. Taiwan Univ. of S&T, Taiwan

This study proposes a cosmetic simulated method, which can make a
raw image reproduce preferred or natural cosmetic effect. We proposeda workﬂow, including the operations of DRMF, image morphing andcosmetic color separation. Three adjusting coefﬁcients are designed toadjust the lightness, detail and color of cosmetic simulated results.
VHF3 - 4L: Invited Modeling the Visibility of Temporal Light
10:10
Artifacts
M. Perz, D. Sekulovski, I. Vogels*, I. Heynderickx*
Philips Res., The Netherlands*Eindhoven Univ. of Tech., the Netherlands
This paper describes temporal light artifacts with a focus on ﬂicker andpresents the state of the art of quantifying the visibility of these
artifacts. The results of new experiments are compared against
previous measures of display ﬂicker.
----- Lunch ----13:40 - 15:40

Ohmi 6

Poster VHFp1: Applied Vision and Human Factors
VHFp1 - 1

Veriﬁcation of the Personal Authentication Using
the Hand Shape Image That Holds the Doorknob
Y. Ueda, F. Saitoh
Gifu Univ., Japan

We propose a personal authentication system using hand shape
images that holds the doorknob. This method performs biometrics
authentication using physical character focused on hand shape that
holds the doorknob. The experimental results show that the proposedsystem yields sufﬁcient accuracy for personal authentication.

149

VHF

Three psycho-visual experiments were carried out to investigate thevisual afterimage characteristics of high luminance LED under darksurround conditions. The result shows that the intensity of illumination,
exposure time and luminance of background are the primary factors
inﬂuencing characteristic of afterimage.

Thursday
VHFp1 - 2

December 10
Study of User Interface Using Cursor Operation
Based on Iris Position in Eye Area
K. Ohshima, F. Saitoh
Gifu Univ., Japan

In the previous conference, we propose a new cursor control method
for Interface to support physically handicapped people by userʼs eye
movement using moving images taken by a video camera. To
discriminate of cursorʼs moving direction, the detection of eye area andestimation of iris position are used.
VHFp1 - 3

Image Template Matching Based Order of Image
Density in Local Area
T. Sugiyama, F. Saitoh
Gifu Univ., Japan

We propose an efﬁcient method based on a new similarity function, theorder of image density (ODM). The experimental results show that the
proposed method had equal or better robustness to shading,inclination, occlusion and noise in comparison with the conventional
method.
VHFp1 - 4

Extraction of Handwriting Lines from Document
Images Based on Concentration Variance of the
Local Area
Y. Note, F. Saitoh
Gifu Univ., Japan

This paper proposes the method to extraction handwriting lines fromdocument images including the handwritten by writing instruments.
Distinction of handwritings by image feature materializes the extraction
whatever their concentration. Experimental results show the proposed
method for the ﬁve types of writing instruments are effective andincorrect extraction less.
VHFp1 - 5

Outdoor Display Performance Predictions Using
Spectral BRDF Measurements
P. Boher, T. Leroux, T. Bignon, V. Collomb-Patton
ELDIM, France

A method to compute accurately the optical properties of displays
under any type of parasitic illumination is presented. Emissive andreﬂective properties are obtained using a new generation ofmultispectral Fourier optics instrument. Examples of application on
isotropic automotive display and anisotropic OLED display arepresented.

150

Thursday
VHFp1 - 6

December 10
Development and Application of Hyperspectral
Two-Dimension Display
M. Saika, K. Yoshida, T. Satoh, M. Yamada,
K. Uchikawa*
Topcon, Japan*Tokyo Inst. of Tech., Japan

VHFp1 - 7

Evaluation of a Real-Time Automatic Coloring
System for Freehand Line Drawings
S. Kurata, H. Mori, F. Toyama, K. Shoji
Utsunomiya Univ., JapanWe evaluate performance of the entire proposed system to colorize afreehand line image drawn on a PC screen displaying a user-selectedreference image, e.g., a color photograph, with low contrast as amodel. A major evaluation item is about the function for the real-time
updating of the coloring result.
VHFp1 - 8

Comparison of Brain Activation between Readingand Listening e-Books
H. Isono, K. Onoguchi*
Tokyo Denki Univ., Japan*Yokogawa Solution Service, Japan

We have studied the effects of differences in e-book reading method(i.e., between visual reading and listening) on brain activation andcontent comprehension. The results showed brain activation to behigher with visual reading as compared with listening of the text read
aloud or presented as computer synthesized speech.
VHFp1 - 9

Personal Authentication Based on Lip Shapes
Pronouncing Vowels Analysis by Picture Processing
T. Senga, F. Saitoh
Gifu Univ., Japan

This paper proposes an individual authentication system using lip
images speaking vowels. Since small changes are likely to occur eachtime when user speaks vowels, the block segmentation matching isused in the proposed method. The experimental results show that the
proposed system has enough accuracy to certify individual.

151

VHF

We have developed a hyperspectral two-dimensional display, which
covers full color gamut and generates hyperspectral two-dimensional
32-primary-color and 120 160-pixel images at 48 frames-per-second.
This display system can easily provide various visual stimuli for vision
science and human factor research.
Also presented in Innovative Demonstration Session (see p. 207)

Thursday

December 10

VHFp1 - 10

Color Natural Images Sharpening Processing Basedon Human Visual Characteristics
J. Miyachi, F. Saitoh
Gifu Univ., Japan

This paper proposes a method for sharpening an image paid attention
on Mach-Effect that is one of human visual characteristics and lateral
inhibition known as factor of Mach-Effect. A sharpening process isdone by using two-dimensional normal distribution based on the modelof lateral inhibition.
VHFp1 - 11L Optimizing Image Contrast of Two Types ofTransparent Displays Using Adaptive S-Curves
P.-L. Sun, H.-P. Chien
Nat. Taiwan Univ. of S&T, Taiwan
Methods for characterizing the colors of T-LCD and Glasses-LCD undervarious lighting conditions are introduced. The color characteristics ofthe two devices are quite different. The image contrast can be improved
adaptively by a sigmoidal tone curve and slight chroma compensation.
----- Break ----16:00 - 17:25

Hiei

VHF4: Color and Vision
Chair:
Co-Chair:K. Masaoka, NHK, Japan
T. Nakatsue, Sony, Japan

VHF4 - 1:
16:00

Invited Observer Metamerism in Displays
Y. Asano*,***Rochester Inst. of Tech., USA**Motorola Mobility, USA

Observer metamerism is a phenomenon where two spectrally different
stimuli are matched for one person but mismatched for another person
due to individual differences in color responses. This work discusses
issues of observer metamerism in displays and introduces a possible
solution called personalized color imaging.
VHF4 - 2
16:30

Memory Colors of Familiar Objects in Abnormal andNormal Color Visions
J.-W. Jian, H.-S. Chen, N.-C. Hu, R. Luo
Nat. Taiwan Univ. of S&T, Taiwan

This study investigated memory colors for people with color visiondeﬁciency (CVD), then built up the memory color model for CVD. The
rating data were analyzed by modiﬁed bivariate Gaussian function, itʼspossible to distinguish CVD from NCV according to the distributions of
the memory-color rating ellipses.

152

Thursday
VHF4 - 3
16:50

December 10
Measured and Calculated Value of the HelmholtzKohlrausch Effect for Natural Images under the
Ambient Lighting Conditions
S. Hashimoto, T. Shizume, G. Ohashi, H. Takamatsu*,
Y. Shimodaira
Shizuoka Univ., Japan*NEC Display Solutions, Japan

VHF4 - 4L
17:10

Proper Pixel Density of Circle Display for Smart
Watch
T.-U. Kim, W. Seo, J. Jang, T.-Y. Park
LG Display, Korea

This study proposed a proper pixel density for circle display of smart
watch. The image quality of samples was evaluated with inner andedge section by subjective evaluation. From this study, circle displayswith resolution of 519 ppi or more is required.
----- Break ----17:40 - 18:50

Hiei

VHF5: Color Rendering
Chair:
Co-Chair:Y. Asano, Rochester Inst. of Tech., USA
A. Yoshida, Sharp, Japan

VHF5 - 1:
17:40

Invited Recommendation of Color Rendering Index
Value for Wide-Gamut UHDTV Production
H. Iwasaki, T. Hayashida*, K. Masaoka*, M. Shimizu,
T. Yamashita*, W. Iwai
Panasonic, Japan*NHK, Japan

While LED lighting is being increasingly used in television production, it
is important to clarify the color rendering index of LED lighting required
for UHDTV production. From subjective evaluation results, we propose
adding R9 as an index in addition to Ra and recommend Ra > 90 and
R9 > 80.
VHF5 - 2
18:10

An Adaptive Color Calibration Method for LCDs in
Different Display Modes
Y. C. Su, P. L. Sun, H. C. Li, W. C. Hung
Nat. Taiwan Univ. of S&T, Taiwan

Color characteristic under different display modes are investigated andan image-based color correction method is proposed to minimize thecolor variation under different display modes.
153

VHF

According to the calculated values by an estimated equation, thephenomenon of the Helmholtz-Kohlrausch effect occur under theambient lightings. The purpose of this study is, therefore, to verify thephenomenon by the subjective evaluation experiment.

Thu. / Fri.
VHF5 - 3
18:30

December 10 / 11
Evaluation of Color Correction Operations for 3D
Scanning Images
K. L. Chan, H. Y. Hsiao, T. H. Lin, H. S. Chen
Nat. Taiwan Univ. of S&T, Taiwan

This paper uses polynomial regression for correcting the color
information and luminance distortion of 3D scanned models.
Evaluations of 3D luminance correction for 3D scanning image were
performed in terms of color difference, luminance curve plot andcontrast ratio.
Author Interviews and Demonstrations
19:00 – 19:40, Ohmi 6

Friday, December 11
9:00 - 10:20

Ohmi 9

3D4/VHF6: Autostereoscopic and Head-Mounted Displays
Chair:
Co-Chair:Y. Takaki, Tokyo Univ. of A&T, Japan
S. Uehara, Toshiba, Japan

3D4/
VHF6 - 1
9:00

HaptoMIRAGE: An Active-Shuttered Real Imaged
Auto-Stereoscopic Display
Y. Ueda, H. Nii*, K. Minamizawa, S. Tachi**
Keio Univ., Japan*IIJ Innovation Inst., Japan**Univ. of Tokyo, Japan

HaptoMIRAGE is an auto-stereoscopic display that does not require
the viewer to wear devices like 3D glasses. it is convenient to produce
content such that real objects and 3D virtual objects are combined.
Furthermore, multiple users can share the 3D view from theirrespective viewpoints.
3D4/
VHF6 - 2
9:20

Dual Orthogonal Flat Panel Autostereoscopic
Display Using Visible Gap Contraction Prism
H. Imai, N. Takanashi
NEC, Japan

We have developed a dual orthogonal ﬂat panel autostereoscopic
display using visible gap contraction prism. Since the prism contracts
the visible gap region between two orthogonal panels optically, it ispossible to diminish visual discomfort for viewer in observing
stereoscopic images.

154

Friday
3D4/
VHF6 - 3
9:40

December 11
Sense of Height and Virtual Body in Head-Mounted
Display Environments
T. Shibata, T. Inoue*
Tokyo Univ. of Social Welfare, Japan*Kanagawa Inst. of Tech., Japan

3D4/
VHF6 - 4
10:00

Development of Poor Man’s 3D-AR Platform for
Amateur Game Creators
Y. Yoneda, E. Dong, T. Fujita, H. Kiriyama, K. Takemura,
K. Iwasaki, R. Urushihara*, T. Ichii
Tokyo Inst. of Tech., Japan*Ochanomizu Univ., JapanFor 3D-AR by amateur creators, development of a low-cost and easy touse platform is necessary. The system should be composed of low-cost
devices such as tablet-PCs and USB-cameras. However, theperformance of each device is low. We'll show the way to cover the
performance by combination of available sensors.
Also presented in Innovative Demonstration Session (see p. 207)----- Break -----

Author Interviews and Demonstrations
12:00 – 12:40, Ohmi 6
Supporting Organizations:Technical Committee on Electronic Information Displays, Electronics
Society, IEICE
Technical Group on Information Display, ITE

SID Display Week 2016
May 22 – 27, 2016
Moscone Convention Center
San Francisco, CA, USA

155

VHF

When using a head-mounted display, we cannot see our own body. We
conducted an experiment to evaluate effects of virtual body on theuserʼs sense of height and fear of heights. The results showed that thevirtual body increased the user sense of height slightly and fear ofheights signiﬁcantly.

Thursday

December 10

Workshop on Projection and Large-Area
Displays and Their Components
Thursday, December 10
9:00 - 9:05

Ohmi 10Opening
Opening Remarks
9:00
S. Ouchi, Hitachi, Japan
9:05 - 10:30

Ohmi 10

PRJ1: Projection Applications
Chair:
Co-Chair:

D. Cuypers, imec, Belgium
H. Nakano, Barco Japan, Japan

PRJ1 - 1:
9:05

Invited Volumetric Display Containing Multiple Two
Dimensional Information Patterns
A. Shiraki, H. Nakayama, R. Hirayama, T. Kakue,
T. Shimobaba, T. Ito
Chiba Univ., Japan

We have developed an algorithm to record multiple two-dimensional
information patterns in single volumetric display. In this technique,different two-dimensional information pattern is expressed by theobservation position of the observer. We showed some application ofthis technique.
PRJ1 - 2
9:30

Implementation of Volumetric 3D Display with
Multi-Layered Shutter Screens for Enhanced theDepth Recognition
J.-T. Kim, S.-H. Yoo, M.-K. Park, H.-R. Kim
Kyungpook Nat. Univ., Korea

We proposed the new 3D system of projection type consisting of SLM
projector, polarization controller, and active shutter screens. To divide a
2D image according to depth information, optical properties of SLM
projector and polarization controller are analyzed by measuring the
Stokes parameter which can represent the polarization state.

156

Thursday
PRJ1 - 3
9:50

December 10
Boosting the Brightness of an LED Projector by
Adding Laser Light Source
P. Hickl, M. N. Ngo
Barco Control Rooms, Germany

High Power LEDs are in many respects a perfect light source forprojection, especially for professional applications. However the
maximum reachable projector brightness is Étendue limited. This paper
describes a very simple method to increase the brightness by justmodifying the typical LED illumination architecture with a laser source.
PRJ1 - 4
10:10

Low-Speckle 6 Primary Laser Digital Cinema
Projector

PRJ

P. Janssens, N. Coulier, W. D’Oosterlinck,
G. Van Den Bergh
Barco, Belgium
Barco has developed a high-brightness laser projector platform for
digital cinema ranging from 20.000 to 60.000 lm. The projectors use afree-space coupled 6 primary laser source and are optimized for
speckle reduction. The platform uses a chilled liquid cooling system tomaximize lifetime and to reduce operational costs.
10:30 - 10:54

Ohmi 10

Short Presentation PRJp1: Projection
All authors of poster papers for the PRJp1 session will give a brief
3-minute oral presentations with no discussion time in advance.
----- Lunch ----13:40 - 15:40

Ohmi 6

Poster PRJp1: Projection
PRJp1 - 1

On the Discussion of the Uniformity Metrics
C.-J. Ou, S.-E. Hong, S.-Z. Yang, Y.-Y. Chang, C.-H. Wu
Hsiuping Univ. of S&T, Taiwan

New deﬁnition of the Uniformity is required for different scenario. It isclear to see that the present deﬁnition is close to the EBU code, witheasier algorithm embedded in microchip for real time inspection.

157

Thursday
PRJp1 - 2

December 10
Image Projection Using Random Phase-Free
Hologram
Y. Nagahama, T. Shimobaba, T. Kakue, T. Ito
Chiba Univ., Japan

Random phase is frequently used to a hologram calculation in order towidely spread an object light. However, the reconstructed image iscontaminated by speckle noise. In this paper, we apply spherical wave
instead of random phase to the hologram calculation, and demonstrate
image projection with random phase-free amplitude hologram.
PRJp1 - 3

Head-Up Display System Incorporated with an
Optical Element Having Both Lens Shift and Convex
Features
C.-Y. Shih, S.-W. Cheng, J.-T. Hsu
Automotive Res. & Testing Ctr., Taiwan

A HUD system was developed to incorporate an optical element thathas the features of lens shift and convex. In doing so, HUD system wasdownsized while the magnifying, long-distance image was maintained.
The HUD was capable of displaying information 2.1 meters in front ofdriver and large image (16.1-in).
PRJp1 - 4

Electrochromic Display Combined with
Microcapsule
J.-H. Yoon, M.-S. Kim, C.-H. Moon
Hoseo Univ., Korea

To enhance the contrast and the uniformity of the electrochromic
display devices, microcapsules were introduced inside the devices. Asa chemical reaction layer, WO3 and polyaniline were injected inside themicrocapsules and their coloration characteristics were investigatedwith the change of the operating voltage.
PRJp1 - 5L

Waveguide-Type Red-Green-Blue Laser Beam
Combiners Integrated with Semiconductor Lasers
A. Nakao, K. Tsujino, S. Yokokawa, S. Tanaka,
S. Hayashiguchi, T. Katsuyama
Univ. of Fukui, Japan

We have realized a new waveguide-type red-green-blue laser beamcombiner, which is integrated with semiconductor lasers. Its size is as
small as 4.5
7.5 mm. Tapered spot size converters and curved
waveguides were introduced. This laser source can be applied tocompact image projectors including eyewear projectors.
PRJp1 - 6L

Polarization-Dependent Diffuser Based on Liquidcrystal Lens Array
W.-K. Lin*,**, W.-C. Su**, B.-S. Lin*
*Nat. Chiao Tung Univ., Taiwan**Nat. Changhua Univ. of Education, Taiwan

A polarization-dependent diffuser is fabricated by liquid-crystal microlens array. The device is operating with a low applied voltage. In thisstudy, the optical characteristic of the diffuser is analyzed. The device
can be a screen when the incident light is diffused.
158

Thu. / Fri.

December 10 / 11

PRJp1 - 7L

A Study Liquid Crystal Lens Dimming Technology in
the Non-Image Projection System
Y.-L. Su, Y.-C. Fang, W.-T. Li
Nat. Kaohsiung First Univ. of S&T, Taiwan

The main purpose of this paper is to explore to improve the laser
projector projection contrast lighting design. Used as the light source ofa liquid crystal lens array local dimming system, the contrast of the
projector reaches the imaging element wafer signiﬁcantly improved
purposes.
PRJp1 - 8L

Validation of Illuminance Measurement for Laser
DisplayPRJ

S. Kubota, M. Kurashige, K. Ishida, K. Ochi*
Dai Nippon Printing, Japan*Konica Minolta, JapanThe effect of speckle on the measurement of illuminance wasinvestigated by changing speckle contrast of RGB lasers andmeasuring illuminance directly and indirectly. Illuminance level in theboth methods was almost same, which means the effect of speckle
was small in the measuring conditions of this validation study.
Also presented in Innovative Demonstration Session (see p. 207)----- Break ----Author Interviews and Demonstrations
19:00 – 19:40, Ohmi 6

Friday, December 11
9:00 - 10:20

Ohmi 10

PRJ2: Projection Components and Materials
Chair:
Co-Chair:P. Janssens, Barco, Belgium
T. Hayashi, OKAMOTO GLASS, Japan

PRJ2 - 1
9:00

Circular Liquid Crystal Alignment Using the Oblique
Inorganic Material Deposition Method
D. Cuypers, J. De Smet, P. Joshi, X. Shang, H. De SmetIMEC & Ghent Univ., Belgium

The possibility of circular liquid crystal alignment using only inorganic
obliquely evaporated alignment layers is explored and used to realize
proof-of-principle devices, as an alternative to the polymer based
circular alignment approaches.

159

Friday
PRJ2 - 2
9:20

December 11
Optical Resin for Displays
R. Ozeki, T. Kenmochi
Kyoritsu Chem., Japan

Future technologies will rely on the utilization of optical resins. Resintechnologies offer effective optical performance for devices which
contributes to optical display units of the present and future forwearable devices. There are three key technologies related to optical
performance; Optical Control, Coloration, and Anchor. These
technologies can be made with design latitude.
PRJ2 - 3
9:40

Ultra High Contrast Reﬂective HTPS Projector
Applied Laser DiodeA. Haruyama, Y. Sugimoto, S. Uchiyama, M. Kawamura,T. Toyooka, H. Iisaka
Seiko Epson, JapanWe developed a new liquid crystal display (LCD) projector that employs
a new reﬂective high-temperature poly-silicon (R-HTPS) device andlaser diodes (LD) for the light source. To achieve a high contrast ratio,
the devices and optical system were modiﬁed.
PRJ2 - 4L
10:00

High-Speed 8-bit Image Projector at 1,000 fps with
3 ms Delay
Y. Watanabe, G. Narita, S. Tatsuno, T. Yuasa*,
K. Sumino*, M. Ishikawa
Univ. of Tokyo, Japan*Tokyo Electron Device, Japan

We report a newly developed high-speed projector operating at a frame
rate of 1,000 fps and with a latency of 3 ms. This was achieved bysynchronized operation of the DMD and LED and by using a speciallydeveloped image transmission module.
----- Break -----

160

Friday

December 11

10:40 - 12:25

Ohmi 10

PRJ3: Solid State Light Source
Chair:
Co-Chair:P. Hickl, Barco Control Rooms, Germany
T. Fukui, Oxide, Japan

PRJ3 - 1:
10:40

Invited Speckle Reduction by Using Transmissive
ZnO Device Based on Dressed-Photon-Assisted
Optical Modulation
N. Tate, T. Kawazoe*, S. Nakashima, W. Nomura,
M. Ohtsu*,**We demonstrated large optical modulation using zinc oxide single
crystal doped with nitrogen ions, which was annealed by a dressedphoton–assisted annealing method. The device, having a thin,transmissive structure, was used as a key component of a novel
speckle reduction method.
PRJ3 - 2
11:05

Highly Reliable High Power 638 nm Broad Area
Laser Diode for Display Application
T. Yagi, K. Kuramoto, R. Wakamatsu, M. Miyashita
Mitsubishi Elec., Japan

638-nm broad area laser diode (BA-LD) with triple 60-Mm stripes
assembled on φ-9.0 mm TO emitted up to 5.5 W at 25 C, pulse withduty of 30%. Mean time to failure of the LD under 2.5 W with duty of
30% was estimated to be 120 K hours.
PRJ3 - 3
11:25

Optically Efﬁcient Homogenization of Laser
Illumination
F. Shevlin
DYOPTYKA, Ireland

DYOPTYKA's innovative deformable mirror technology is shown toachieve effective and efﬁcient intensity homogenization of laser
illumination and speckle reduction in a projection display. Performanceis found to be similar to an approach which uses one stationary andone moving diffuser moving diffuser but with signiﬁcantly improved
optical efﬁciency.
Also presented in Innovative Demonstration Session (see p. 207)
PRJ3 - 4
11:45

Mixed Phosphors/Dye in Liquid for High Power
Digital Projectors with Laser Excitation
K. Li
Wavien, USA

Heat dissipation using standard phosphor wheel conﬁguration in laser
phosphor projectors limits the output to about 6,000 lumens. This paper
describes a circulating liquid with a suspension of phosphor powder inan optical cell allowing the output to be extended to beyond 60,000
lumens for 3D digital cinema.
161

PRJ

Kyushu Univ., Japan*Res. Inst. of Nanophotonics, Japan**Univ. of Tokyo, Japan

Friday
PRJ3 - 5L
12:05

December 11
SiC magneto-optical current-transformer applicable
to a polarization rotator using dressed photons
T. Kawazoe*, N. Tate**, M. Ohtsu*,****Nanophotonics Eng. Organization, Japan**Kyushu Univ., Japan***Univ. of Tokyo, JapanAn magneto-optical current-transformer using SiC was demonstrated.
This device was SiC homojunction diode processed by the dressedphoton-phonon annealing. The Verdet constant of the device was 600
deg/A and the Faraday rotation angle was 7800 deg/cm. Its potential asa display component is extremely high.
Author Interviews and Demonstrations
12:00 – 12:40, Ohmi 6----- Lunch ----13:30 - 14:50

Ohmi 10

PRJ4: Automotive Display and Lighting
Chair:
Co-Chair:F. Shevlin, DYOPTYKA, Ireland
K. Ohara, Texas Instrs., Japan

PRJ4 - 1:
13:30

Invited Study on the Effect of the Laser Headlights
on the Brightness of Road Surfaces and Trafﬁc
Signs
S. Iwamoto, Y. Tsukada*
Honda R&D, Japan*Nat. Trafﬁc Safety & Environment Lab., Japan

In the past few years, laser has been developed as a light source to be
used in the headlamps, and its practical application has already been
started. Accordingly, we conducted comparative study on how
headlights with different light sources and colors affect the appearanceof trafﬁc signs and white lines.
PRJ4 - 2:
13:50

Invited Laser/LED Headlights
T. Waragaya, Y. Nakazato, T. Anzai
Stanley Elec., JapanThe automotive headlight which is equipped with LED currently
becomes familiar. Laser based light sources are attracting attention as
next-generation light sources in automotive headlights. In this paper,
we introduce as the example that how the laser based headlight which
we manufactured contributes to safe driving.

162

Friday
PRJ4 - 3:
14:10

December 11
Invited Visualization of the Wind by the 1.5 Mm
Coherent Doppler LIDAR
T. Yanagisawa, T. Sakimura, N. Kotake, S. Kameyama,
T. Ando, K. Asaka, M. Furuta, H. Tanaka, T. Harada,
M. Hagio, M. Enjo, Y. Kajiyama, Y. Fujii, Y. Hirano
Mitsubishi Elec., Japan

We have released coherent Doppler LIDARs (CDLs) which realize
visualization of the wind. Long-range CDL (A series) can measure wind
up to 30-km of radius. Compact CDL (W series) can visualize velocity
and direction of the wind in real time. We introduce principle andtechnologies used in the CDLs.
Augmented Reality Head-Up Display: Deﬁning
Brightness Requirements

PRJ

PRJ4 - 4L
14:30

S. Martin, J. Thompson, J. Ferri
Texas Instrs., USA
The next generation augmented reality (AR) head-up display (HUD) will
fundamentally change the driverʼs experience, providing graphics
conformed to the real-world screen. AR HUD systems have newparameters requiring signiﬁcantly higher luminous ﬂux. Additionally,sunlight thermal loading and polarization effects must also be
considered for these new AR HUD systems.
----- Break ----15:10 - 16:35

Ohmi 10

PRJ5: Projection Optics
Chair:
Co-Chair:J.-W. Pan, Nat. Chiao Tung Univ., Taiwan
Y. Asakura, NITTOH KOGAKU, Japan

PRJ5 - 1:
15:10

Invited Development of RGB Laser Backlit Liquid
Crystal Display
E. Niikura, N. Okimoto, S. Maeda, H. Yasui, A. Heishi,
S. Yamanaka, T. Sasagawa*, Y. Nishida**, Y. Kusakabe**
Mitsubishi Elec., Japan*Mitsubishi Elec. Lighting, Japan**NHK, Japan

We have developed a laser backlit liquid crystal display with the RGB
semiconductor laser diodes in the backlight light source. In this backlit
system, three-color laser lights are emitted by our original light guiderods. This display has achieved 98% cover ratio of the Rec. ITU-R
BT.2020.

163

Friday
PRJ5 - 2
15:35

December 11
Aberration Correction in Ultra Short Throw
Projection Lens Using a Relay Optical System
T. Matsuo, K. Mochizuki, A. Sawamoto, M. Yoshida,
K. Ooe, Y. Asakura
Nittoh Kogaku, Japan

We have developed a new optical system that uses Hybrid Relay Lens
(HRL) system. The HRL system is a lens with very short focal length,
which satisﬁes all the requirements expected for a projection lens. Thisnew type of lens system will fulﬁll unsolved needs in the market.
PRJ5 - 3
15:55

Wide-Conversion Lens Design for a Pico Projector
K.-W. Zhao, C.-W. Tsao, Y.-C. Chen, K-D. Chang*,
J.-W. Pan
Nat. Chiao Tung Univ., Taiwan

We propose a concept for the design of a 0.702x wide-conversion lensfor a 0.30-in. Digital Micromirror Device. By attached in front of the
projection lens of a Pico Projector, this wide-conversion lens is capableof enlarging the size of the original projected image at the same
projection distance.
PRJ5 - 4
16:15

Optical Device Design to Realize the Visor-Type
Display and Augmented Reality
C.-H. Chuang*, Y.-K. Hsu*, C.-Y. Chen**, B.-S. Lin***,P.-J. Wu****Nat. Yunlin Univ. of S&T, Taiwan**Nat. Taiwan Univ. of S&T, Taiwan***Nat. Chiao Tung Univ., Taiwan

In this study, we propose a wearable display with a projection device.
The “optical projection device” is designed and mounted on the visor to
realize augmented reality. By using the device, an upright enlarge
virtual image is obtained and the distance between the eyes and theimage is 14 cm.
----- Break -----

164

Friday

December 11

16:50 - 18:20

Ohmi 10

PRJ6: Wearable Applications
Special Topics of Interest on Augmented Reality and Virtual Reality
Chair:
Co-Chair:S. Shikama, Setsunan Univ., Japan
S. Ouchi, Hitachi, Japan

PRJ6 - 1:
16:50

Invited High-Luminance See-Through Eyewear
Display with Novel Volume Hologram WaveguideTechnology
S. Nakano, T. Oku, K. Akutsu, M. Kuwahara, T. Yoshida,
E. Kato, K. Aiki, I. Matsumura, A. Machida, H. Mukawa
Sony, Japan

PRJ6 - 2:
17:15

Invited Augmented Vision for Minimally Invasive
Surgery
T. Nakaguchi
Chiba Univ., Japan

Laparoscopic surgery is one of the most important trends in modern
medicine. It, however, makes the surgical procedure much difﬁcult andrisky. Since augmented reality (AR) technologies have a potential toaddress these problems, we will present current situation and future
problem of the projector-based AR system in Medicine.
PRJ6 - 3
17:40

A Head Mounted Display Using the Original Flexible
Arm and Headband
M. Watanabe, Y. Fukuda, M. Yagi, H. Ishizaki,
M. Nakanishi*, N. Hanafusa**, T. Katano
Brother Inds, Japan*Keio Univ., Japan**Univ. of Tokyo Hospital, Japan

We have developed a Head Mounted Display “HMD” using the original
ﬂexible arm and headband. Users of this HMD can place the display at
the free position. The feasibility test of this HMD on ultrasound guided
vascular access puncture conﬁrmed good operability.
Also presented in Innovative Demonstration Session (see p. 207)

165

PRJ

We have developed a see-through eyewear display with novel volume
hologram waveguide. The waveguide has two in-coupling and one outcoupling reﬂection holograms. This technology enables to achieve highluminance (1000 cd/m2) and high-uniformity (70%) characteristics,
which is indispensable for augmented reality applications in various
environments.

Friday
PRJ6 - 4L
18:00

December 11
An Applied Method for Wearable Device withAssortment Work in Logistics
T. Fujiwara, T. Kosaka, T. Matsuda, Y. Nakajima,
T. Sakurada*, T. Ozaki
Hitachi, Japan*Hitachi Transport Sys., Japan

Wearable device attracts many companies. Logistics department
especially expects it because getting advantage of hands-free. In thisstudy, we adapted wearable device to assortment work in logistics andevaluated cost cut effect in comparison with current method. As theresult of evaluation, cost cut effect is approximately 15%.
Author Interviews and Demonstrations
18:10 – 18:50, Ohmi 6
Supporting Organizations:
Laser Display Technology Research Group, Optical Society of Japan
Technical Group on Information Display, ITE“Innovative Demonstration Session”
by Oral and Poster Presenters
Live demonstrations of emerging information
display technologies
Thursday, Dec. 10, 2015
10:30 – 16：00
Ohmi 5 (2F)
Shakunage 2 (1F)
See page 205-209 for details

EXHIBITION
12:00 – 17:00 Wednesday, Dec. 9
10:00 – 18:00 Thursday, Dec. 10
10:00 – 14:00 Friday,
Dec. 11
Lobby (2F)
Otsu Prince HotelFree admission with your registration name tag
166

Wednesday

December 9

Workshop on Electronic Paper
Wednesday, December 9
13:30 - 14:40

Hiei

EP1: Emerging Technologies for e-Paper
Chair:
Co-Chair:S. Maeda, Tokai Univ., Japan
N. Kobayashi, Chiba Univ., Japan

EP1 - 1:
13:30

Invited Paper Electronics for All Paper-Based
Displays
H. Koga
Osaka Univ., Japan

EP1 - 2:
13:55

Invited New Switchable Mirror Sheet Using
Gasochromic Switching Method
K. Yoshimura, Y. Yamada
AIST, JapanWe developed an innovative gasochromic switchable mirror sheet. With
this new switching method, the attached sheet can be switchedbetween transparent and mirror state like a conventional gasochromic
method using pair glass. Because the thin ﬁlm structure of
gasochromic is very simple and this new technique has a possibility toraise a cost revolution for switchable sheet.
EP1 - 3
14:20

Photo-Thermo Functional Polymeric Films Showing
RGB Coloration and Emission for Dual Mode
Displaying MediaK. Ogasawara, K. Nakamura , N. Kobayashi
Chiba Univ., Japan

Thermochromic reactions are widely applied to thermal rewritable
media. These displaying media are usually enabling single colorationand no visibility in dark place. We combined RGB thermochromic
materials with luminescent materials to construct multi-color novel dual
mode displaying media which showed high visibility in both bright anddark places.
----- Break -----

167

EP

Cellulose nanoﬁber paper-based ﬂexible electronic devices, such astransparent conductive paper, nonvolatile paper memory and paper
antenna, were successfully developed. These paper electronics offeredboth high ﬂexibility and device performances, opening new doors for all
paper-based displays.

Wednesday

December 9

15:10 - 16:35

Hiei

EP2: Electrochromic Displays
Chair:
Co-Chair:N.-S. Roh, Samsung Display, Korea
M. Higuchi, NIMS, Japan

EP2 - 1:
15:10

Invited Inkjet Printed Multi-Color Thin Films forHigh-Contrast Electrochromic Devices
B.-H. Chen, S.-Y. Kao, C.-W. Hu*, M. Higuchi**, K.-C. Ho,
Y.-C. LiaoNat. Taiwan Univ., Taiwan*AIST, Japan**NIMS, Japan

By digitally controlling print dosages of primary electrochromiccolorants, colors of the printed thin ﬁlm patterns can be adjusted
directly without pre-mixing or synthesizing new materials. Various color
setup or patterns can also be printed by this all-solution process to
manufacture single electrochromic devices with multiple colors andhigh contrast.
EP2 - 2
15:35

Investigation of Mean Electrode Potential in Organic
Electrochromic Device during Device Operation
N. Ura, Y. Watanabe, K. Nakamura, N. Kobayashi
Chiba Univ., Japan

We measured the electrode potential of anode and cathode during
actually-driving of electrochromic cell to reveal the load of the material
receiving from the electrode. From the result, it became obvious thatthe electrode potentials of the anode and the cathode wereautomatically regulated to facilitate both electrode reaction.
EP2 - 3
15:55

Investigation of Electrodeposition Behavior and Its
Optical Characterization of Ag Deposition-BasedMulticolor EC Device
R. Onodera, A. Tsuboi, K. Nakamura, N. Kobayashi
Chiba Univ., Japan

Recently, we reported Ag deposition-based multicolor electrochromic(EC) device. The EC device can show three primary colors of cyan,
magenta and yellow (CMY). To investigate the detailed optical property,
the electrodeposition behavior of Ag nanoparticles and its coloration
mechanisms of the device were analyzed in detail.

168

Wed. / Thu.

December 9 / 10

EP2 - 4
16:15

Electrochemical Modulation of Emission andColoration by Novel Functional TiO2 Electrode
Having Covalently Connected Lanthanide(II)Complexes and Viologen Derivatives
K. Nakamura, K. Kanazawa, Y. Komiya, N. Kobayashi
Chiba Univ., Japan

A dual-mode display device which can operate in both emissive andreﬂective modes, having advantages of both modes, is expected as anext generation display. In this study, electrochemical switchingsystems, which enable simultaneous control of both emission andcoloration, were investigated in order to create the novel displaying
materials.
Author Interviews and Demonstrations
16:30 – 17:10, Ohmi 6

Thursday, December 10
Ohmi 3EP3: Electrophoretic Displays and Applications
Chair:
Co-Chair:G. Zhou, South China Normal Univ., China
K. Hashimoto, E Ink Japan, Japan

EP3 - 1:
9:00

Invited Innovation and Application of e-Paper
Display
F.-J. Ko
E Ink Holdings, Taiwan

E Inkʼs ePaper offers the best paper-like viewing experience. Besides
the ﬁrst successful adoption of ePaper for the eReader application,
numerous other new and innovative product applications madepossible by its advantages such as low power consumption, bi-stability,
ﬂexibility and etc. New applications will be described in this talk.
EP3 - 2:
9:25

Invited Development of Flexible Active-Matrix
Electrophoretic Displays
K. NomotoSony, Japan

We have developed ﬂexible active-matrix electrophoretic displays. We
will discuss a ﬂexible a-Si TFT backplane based on bonding-debonding
process and an ultra-ﬂexible organic TFT with bending radius down to2 mm. Challenge to incorporate high-resolution printing process will bealso discussed for future manufacturing process.

169

EP

9:00 - 10:15

Thursday
EP3 - 3:
9:50

December 10
Invited Future Electronic Paper in Ofﬁce: Proposals
Based on Actual Use of Electronic Paper Device
H. Shibata, Y. Fukase*, K. Hashimoto**, Y. Kinoshita***,H. Kobayashi, S. Nebashi****, M. Omodani*****,
T. Takahashi******
Fuji Xerox, Japan*ISJ, Japan**E Ink Japan, Japan***Toshiba Tec, Japan****Seiko Epson, Japan*****Tokai Univ., Japan******Dai Nippon Printing, Japan

Nine participants used an A4-size electronic paper device in their work.
Based on the results, we suggest that electronic paper in the ofﬁceshould aim at supporting activities with other devices that could
compensate for defects of electronic paper. We also discuss three
application domains: active reading, collaboration and note-taking.
10:15 - 10:36

Ohmi 3

Short Presentation EPp1: Electronic Paper
All authors of poster papers for the EPp1 session will give a brief
3-minute oral presentations with no discussion time in advance.
----- Lunch ----13:40 - 15:40

Ohmi 6

Poster EPp1: Electronic Paper
EPp1 - 1

Withdrawn

EPp1 - 2

Effects of Silver Halide Complexes on the
Coloration Properties of Silver Deposition-BasedElectrochromic Device
R. Kimura, A. Tsuboi, K. Nakamura, N. Kobayashi
Chiba Univ., Japan

We have constructed Ag deposition-based electrochromic (EC) device
which showed reversible changes of optical states between clear
transparent and silver-mirror by driving procedure. In this research, weevaluated the effects of silver halide complexes on the coloration
properties of the EC device by changing halide anion species.

170

Thursday
EPp1 - 3L

December 10
Titanium Plate as Rewritable Imaging MediaI. Komatsu, K. Matsunaka, S. Maeda
Tokai Univ., JapanThe method for preparing digital images on titanium plate by anodic
oxidization was studied. First making a toner image on the treatedtransparency sheet, then transferring the toner image to titanium plate
thermally. And we found that 1% HF solution could erase the image ina few minutes.
EPp1 - 4L

Rewritable Paper Utilizing Kapok Fibers Containing
Chromic Material
K. Noda, S. Kiyama, T. Makino, S. Yoshinari, S. Maeda
Tokai Univ., Japan

EPp1 - 5L

Flexible Electrophoretic Image Display Using
PEDOT/PSS Organic Transparent Electrode
K. Aoba, H. Hyakutake, T. Kitamura*Denshi Kako, Japan*Chiba Univ., Japan

The ﬂexible electrophoretic image display device with an organic
electrically conductive layer using PEDOT/PSS printing ink by screen
printing was produced. It was conﬁrmed that the black and white image
were displayed on the electrophoretic image display device with theorganic conductive electrodes.
EPp1 - 6L

Memory Effect Cancelling of Twisting Ball Display
via Space-Charge Polarization
Y. Komazaki, T. Torii
Univ. of Tokyo, Japan

E-papers utilizing particle movement, such as electrophoretic displays,liquid powder displays and twisting ball displays usually have memory
effect (bistability). In this study, we perform a quite simple method tocancel the memory effect of a twisting ball display by using spacecharge polarization.

171

EP

We have succeed to make Kapok ﬁbers containing metal complex.
Kapok ﬁber is natural half-transparent hollow tube whose inner andouter diameters are 18 and 20 Mm respectively. We think that the
Kapok ﬁbers containing metal complex have potential to apply to theﬁeld of anti-counterfeit and rewritable paper.

Thursday
EPp1 - 7L

December 10
Effects of the Severity of Cataract Cloudiness on
the Readability of e-Books
K. Iwata, Y. Ishii, S. Matsunami, N. Ishio, P. R. Lege,T. Kojima*, M. Miyao
Nagoya Univ., Japan*Chubu Gakuin Univ., Japan

We carried out experiments to evaluate the readability of e-readers withdifferent levels of cloudiness in the eyes. In the experiments, we usedfour devices. We conducted subjective evaluations under staged
illuminance conditions. This study found a relationship between theseverity of cataract cloudiness and readability of device.
EPp1 - 8L

Veriﬁcation of the Minimum Character Sizes for
Comfortable Reading of an e-Paper
Y. Ishii, K. Iwata, N. Ishio, S. Matsunami, L. R. Paul,T. Kojima*, M. Miyao
Nagoya Univ., Japan*Chubu Gakuin Univ., Japan

We carried out an experiment to evaluate the readability of e-books,
backlit LCD, and ordinary paper text. In the experiment, we measured
the objective evaluation, and then asked them evaluate the subjective
evaluation. This study found a dependency on the minimum character
sizes and readability for e-paper devices.
----- Break -----

Author Interviews and Demonstrations
19:00 – 19:40, Ohmi 6

Evening Get-Together
with Wine
Tuesday, Dec. 8, 2015
18:00 – 20:00
Hiei (2F)
Otsu Prince Hotel(Sponsored by Merck Ltd., Japan)
See page 12 for details

172

Thursday

December 10

Workshop on MEMS and Emerging
Technologies for Future Displays and Devices
Thursday, December 10
13:40 - 15:40

Ohmi 6

Poster MEETp1: Emerging Technologies
MEETp1 - 1 Electrode Patterns for Optimized HB-LED
Apodization Proﬁles
S. -Z. Yang, C.-J. Ou, S.-E. Hong, Z.-Y. Shi, Y. -Y. Lin
Hsiuping Univ. of S&T, Taiwan
Comparison for the two LED electrodes is demonstrated. Model with
scattering mechanism and the optical throughput simulations for bothphotons and electron/hole recombination are considered simultaneous.
Results indicate that LED electrode arrangements for multi-physics andoptical throughput are contradict to each other. Guidelines to overcome
these conﬂicts are discussed.
MEETp1 - 2 Surface Structures Treatment for Light Extraction of
HB-Light Emitting DiodeMEET

C.-J. Ou, C.-H. Wu, Z.-Y. Shi, S.-Z. Yang, Y.-Y. Lin,
M.-Z. Zhang, Y.-Y. Chang
Hsiuping Univ. of S&T, Taiwan
In that respects are high demands for increasing the light extraction of
the LED, surface treatment on layer structure becomes a viable path tooverwhelm the limitation due to the LED materials. We represent thegeometric variations of the surface micro-structure to explore thestructure equations of the LED device.
MEETp1 - 3 Investigating the Photoelectric Characteristics of
the TiO2 Composite Graphene UV Photodetector
C.-T. Wang, C.-C. Ting*, S.-Y. Chu
Nat. Cheng Kung Univ., Taiwan*Nat. Chung Cheng Univ., Taiwan
In this paper, we controlled the thickness of the TiO2 to enhance theperformance of the graphene photodetector. We could ﬁnd the
responsivity and rising time were strong dependence on the thicknessof the TiO2. We well explain by the semiconductor nanoparticles
adsorption and desorption oxygen molecules.

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December 10

MEETp1 - 4L Water-Proof and Flexible Inverted Quantum-Dot
Light Emitting Diodes with Thin-Film Encapsulation
J. Lee, H.-M. Kim, Y. Kim, E. Hwang
Kyung Hee Univ., Korea
We developed the thin-ﬁlm encapsulation technique having a waterproof and ﬂexible properties for inverted quantum-dot light emitting
diodes (QLEDs). The ﬂexibility evaluations for inverted QLED with thinﬁlm encapsulation, such as bending and rolling tests, are reported andit was conﬁrmed that the QLED can be operated at underwater
successfully.
----- Break ----16:00 - 16:05

Ohmi 8Opening
Opening Remarks
16:00
M. Nakamoto, Shizuoka Univ., Japan
16:05 - 17:25

Ohmi 8

MEET1: Quantum Dots Applications
Chair:
Co-Chair:Y. Bonnassieux, Ecole Polytechnique, France
F. Templier, CEA-LETI, France

MEET1 - 1: Invited Beyond Edge-Lit TV: Diversifying Quantum
16:05
Dot Penetration into Other Display Segments
S. Coe-Sullivan
QD Vision, USA
In the PC monitor space, new and existing standards in color gamut
may be the primary driver of QD market penetration.
MEET1 - 2: Invited Next Generation Display Technology:
16:25
Quantum Dot LEDs
J. R. Manders*, L. Qian*, A. Titov*, J. Hyvonen*,
K. P. Acharya*, J. Tokarz-Scott*, Y. Yang*, W. Cao*,Y. Zheng*, J. Xue**, P. H. Holloway*,***NanoPhotonica, USA**Univ. of Florida, USA

Colloidal quantum dot light emitting diodes (QLEDs) are reported thatexhibit external quantum efﬁciencies (EQE) >10% for red, green, andblue. This includes a record 21% EQE, 82 cd/A green. Devices have
lifetimes of >280k hours and cover >170% NTSC 1987 and ~90% of
the Rec. 2020 color spaces.

174

Thu. / Fri.

December 10 / 11

MEET1 - 3: Invited Outcoupling Efﬁciency of Electrospun
16:45
Nanoﬁber Sheet Embedded with Quantum Rods
M. Hasegawa, Y. Hirayama, S. Dertinger
Merck, Japan
We fabricated aligned and nonaligned electrospun polymer nanoﬁbers
embedded with quantum rods using a high-speed rolling drum or aplanar substrate. Both sheets showed a higher outcoupling efﬁciency
compared with those of QRs dispersed in a polymer ﬁlm even after
enhancement using titanium oxide nanoparticles.
MEET1 - 4: Invited Inverted Quantum-Dot Light Emitting Diodes
17:05
Using Solution Processed Metal-Oxide ElectronTransport Layer
H.-M. Kim, J.-G. Kim, J.-E. Lee, J. Jang
Kyung Hee Univ., Korea
Inverted quantum-dot light-emitting diodes (QLEDs) are demonstratedusing solution processed metal-oxide electron transport layer (ETL).
The QLEDs with metal-oxide based green, yellow and red QLEDs were
demonstrated with high efﬁciencies. The multilayer structure withsurface modiﬁcation for ETLs can improve the performance of QLEDs.
----- Break -----

MEET

Author Interviews and Demonstrations
19:00 – 19:40, Ohmi 6

Friday, December 11
10:40 - 12:00

Ohmi 8

MEET2: Novel Materials and Components
Chair:
Co-Chair:J. Silver, Brunel Univ. London, UK
J. Jang, Kyung Hee Univ., Korea

MEET2 - 1: Invited Very Low Voltage Flexible N-Type Organic
10:40
Field Effect Transistors
Y. Bonnassieux, S. Jung, M. Al-Bariqi*, G. Gruntz**,
Y. Nicolas**, T. Toupance**, G. Horowitz
Ecole Polytechnique, France*Royal Saudi Naval Forces, Saudi Arabia**Univ. of Bordeaux, France

We propose an efﬁcient approach for an n-type OFETs with the samedevice structure used commonly for p-type. Using TIPSTPDO-tetraCN
and cross-linked PMMA, respectively as n-type OSC and dielectric, We
have obtained linear regime mobility (1.8 0.2) 10-2 cm2/Vs, small
spatial standard deviation of threshold voltage (~0.1 V), and operating
voltage less than 3 V.
175

Friday

December 11

MEET2 - 2: Invited Carbon Nanotube Electron Beams for
11:00
Medical and Display Devices
J. S. Kang, M. T. Chung, K. C. Park
Kyung Hee Univ., Korea
We introduced the novel carbon nanotube electron beam(C-beam)fabrication techniques for medical imaging and display devices.
C-beam were fabricated with resist-assisted pattering (RAP) processgrown carbon nanotube emitters. With the C-beam, we fabricatedsilicon PIN and TFT devices and the performances of display devices
and X-ray tubes will be presented.
MEET2 - 3: Invited World’s Fastest Plastic Optical Fiber and
11:20
Network for 4K/8K TV
A. Inoue, Y. Koike
Keio Univ., Japan
Optical network based on world's fastest graded-index plastic opticalﬁber (GI POF) has been proposed and developed for the 2020 Tokyo
Olympics and Paralympics. We developed the 120 Gb/s GI POF cablewith ballpoint-pen connector for consumer-friendly optical interface
without electromagnetic interference in upcoming 4K/8K era at home.
MEET2 - 4
11:40

Pseudo-Crystalline Silicon PIN Diode with Carbon
Nanotube Electron Beam(C-Beam) Exposure
Technique
M. T. Chung, J. S. Kang, H. R. Lee, J. H. Hong,
K. C. Park
Kyung Hee Univ., Korea

We introduced the novel pseudo-crystalline silicon diode fabrication
technique with carbon nanotube electron beam (C-beam) irradiation.
With the high performance C-beam, we could crystallized pin
structures and obtained enhanced the diode characteristics with higher
on/off ratio. Detail on multi-layer crystallization and various display
device application will be presented.
Author Interviews and Demonstrations
12:00 – 12:40, Ohmi 6----- Lunch -----

176

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December 11

13:30 - 14:50

Ohmi 8

MEET3: MEMS and Related Technologies
Chair:
Co-Chair:Y. Aoyagi, Ritsumeikan Univ., JapanK. C. Park, Kyung Hee Univ., Korea

MEET3 - 1: Invited Development and Applications of MEMS
13:30
Process Tools
S. Tanaka
Tohoku Univ., Japan
This paper presents our recently-developed process tools including
ALD systems, a vacuum wafer bonder, a vacuum ﬂip chip bonder for
chip-scale packaging and a remote-type hot-wire atomic hydrogensource for metal reduction and polymer etching. In addition, examples
of MEMS which have been created using the above tools are
introduced.
MEET3 - 2
13:50

Membrane-Type Microheater for Wavelength
Selective Infrared Emitter and CO2 Gas Sensing
H. Ishihara, K. Masuno, M. Ishii, S. Kumagai*, M. Sasaki*
Yazaki, Japan*Toyota Tech. Inst., Japan

MEET3 - 3
14:10

Enhancement and Transparent of Film Applied to
the Transparent Display Device
C.-H. Chiu, Y.-H. Chen*, W.-C. Chien*, C.-H. Chien*
Chunghwa Picture Tubes, Taiwan*Tatung Univ., Taiwan

The transparent display devices (TDDs) were limited by theperformance of the luminance. In this study, the ﬁlm is a double
structure, included some micro metal oxide particles that can be
scattering and refracting the light. The ﬁlm can be improved the TDD atleast 60% of luminance.

177

MEET

A wavelength selective infrared emitter is fabricated showing the clear
enhanced emission peak due to the surface plasmon polariton. The
emission at the wavelength of the absorption band of CO2 gas isenhanced. Against input power, the intensity at the peak wavelengthshows the steeper increase than the background intensity.

Friday
MEET3 - 4
14:30

December 11
Novel Solar Window with LED Illuminating
Compensation for LCD Display
C.-J. Ou, H.-J. Wang, M.-Z. Zhang, H.-C. Chen,
M.-H. Tsai, J.-L. Cheng, C.-M. Lu, M. Chen*, T. Hu*
Hsiuping Univ. of S&T, Taiwan*LED SignS, Taiwan

Natural light system (NLS) becomes a promising resource as the next
generation light source. It is of interest to see the possibilities that
introduce the NLS as the source for the information display. We
demonstrate an information device that installs at the Historical sites Nuomi Bridge tour center.
----- Break ----15:10 - 16:30

Ohmi 8

MEET4: Nanotechnologies for Display Applications
Chair:
Co-Chair:S. Tanaka, Tohoku Univ., Japan
G. R. Fern, Brunel Univ. London, UK

MEET4 - 1: Invited Blue and Green 10-μm Pixel Pitch GaN LED
15:10
Arrays with Very High Brightness
F. Templier, J.-M. Bethoux, B. Aventurier, F. Marion,
S. Tirano, M. Lacroix, M. Marra, V. Verney, L. Dupré,
F. Olivier, F. Berger, W. B. Naceur, A. Sanchot,
I.-C. Robin, M.-A. di Forte-Poisson*, P. Gamarra*,
C. Lacam*, M. Tordjman
CEA-LETI, France*III-V Lab, France

High-brightness 10-Mm pixel pitch GaN arrays hybridized on siliconcircuit were developed and exhibit more than 4 106 and 2.2 107 cd/m²
for the blue and green arrays, respectively. This technology is very
promising for fabricating very high brightness microdisplays, which arenecessary for many new applications.
Also presented in Innovative Demonstration Session (see p. 208)
MEET4 - 2: Invited Fabrication of Nonlinear Photonic Crystal
15:30
and Its Application to UV Laser
Y. Aoyagi*,**, N. Kurose*, S. Inoue***Ritsumeikan Univ., Japan**Tokyo Inst. of Tech., JapanA concept of nonlinear hetero-structure photonic crystal is proposedand fabrication techniques of the photonic crystal are described. The
performance of the nonlinear photonic crystal and its application to
generate efﬁciently UV laser by 2nd harmonic generation of incident
laser are explained.

178

Friday
MEET4 - 3
15:50

December 11
Multifunctional LED Back-Lightings for Displaying,
Illuminating and Insect Prevention
C.-J. Ou, Y.-Y. Lin, H.-J. Wang, G.-T. Liu, Z.-Y. Shi, Y.-Y. Lin,
M.-Y. Li, M.-Z. Zhang, C.-H. Wu, W.-M. Lee, C.-H. Lin
Hsiuping Univ. of S&T, Taiwan

In this article we will demonstrate a novel smart LED lightings systemthat can fulﬁll the necessity for the multifunctional requirement for a
local Historical site - Nuomi Bridge tour center.
MEET4 - 4
16:10

OLED Micro-Display in 0.35 μm Complementary
Metal-Oxide Semiconductor Technologies for
Wearable Electronic Display Application
C.-H. Chang, P.-T. Liu, T.-Y. Ting*, J.-T. Lian*Nat. Chiao Tung Univ., Taiwan*Chungwa Picture Tubes, Taiwan

We will focus on the OLED driven by single crystal Si metal-oxidesemiconductor ﬁeld effect transistors technology. The milestone of thisproject will lower the overall power consumption of circuit and achieve
the goal of ultra-high resolution to realize the 3D-Display application.
----- Break ----Ohmi 8

MEET5: Emerging Quantum Dots and Nanotechnologies
Chair:
Co-Chair:S. Coe-Sullivan, QD Vision, USA
J. Manders, NanoPhotonica, USA

MEET5 - 1: Invited By Understanding How Light Emission
16:50
Depends on Size, Morphology and Phase in
Inorganic Phosphor Materials, Can We Deduce
Properties to Design Efﬁcient Nanostructures forTomorrows Industrial Needs
J. Silver*, R. Dhillon, D. den Engelsen*, G. R. Fern*,
T. G. Ireland*, D. Hudry**, J. H Dickerson**,****Brunel Univ. London, UK**Brookhaven Nat. Lab., USA***Brown Univ., USA

The light emitting properties of a wide variety of Eu3+ doped macro andnanostructures that differ in morphology are considered/discussed
along with quantum dots (QDs) and quantum rods (QRs). Features thatare important in light emission are considered along with theirimplications for future phosphor design.

179

MEET

16:50 - 18:20

Friday

December 11

MEET5 - 2: Invited Electron Microscopy of Quantum Dots for
17:10
Display Applications
G. R. Fern, J. Silver, T. G. Ireland, A. Howkins,
P. Hobson, S. Coe-Sullivan*
Brunel Univ. London, UK*QD Vision, USA
CdSe/ZnCdS core/shell Quantum dots with high quantum yield (~84%)
were used in this experiment. For the ﬁrst time the red ﬁlteredcathodoluminescence images are shown along with theircorresponding electron energy loss spectrum map, and high angle
annular dark ﬁeld image of the corresponding particles is shown.
MEET5 - 3: Invited ITU-R BT.2020 Color in LCDs with Today’s
17:30
Technologies: A Comparative Analysis
J. Thielen, J. Hillis, J. Tibbits, A. Lemon, D. Lamb,
J. VanDerlofske, G. Benoit
3M, USAWe previously demonstrated the ability of current CdSe-QDs to achieve
the ITU-R BT.2020ʼs color recommendation. Here we expand ourinvestigation to include InP-QDs and Potassium Fluorosilicate
phosphor with a focus on tradeoffs with efﬁcacy. Finally, we consider
whether any can be considered perceptually indistinguishable from atrue Rec. 2020 display.
MEET5 - 4L Structural Properties of Al Doped Zinc Oxide Nano/
17:50
Microstructures Prepared under Various pH
Conditions
T. Umakoshi, K. H. Kim, Y. Abe, M. Kawamura, T. Kiba
Kitami Inst. of Tech., Japan
Al-ZnO nano/microstructures grown on ZnO seed layers were
investigated structural properties with various pH conditions adding anammonia solution. Due to initial weak acidic condition (pH ~5.5), therandomly oriented microrods were formed. At pH ~7.1 and ~10, thenanorods and nanodisks were grown on the ZnO seed layers,respectively.

180

Friday

December 11

MEET5 - 5L Piezoelectric Characteristics of P(VDF-TrFE)/PZT
18:05
Composites for Pressure Sensor
S. Y. Han, D. Geng, J. Jang
Kyung Hee Univ., Korea
In this study, we have developed a series of high-performance P(VDFTrFE)/PZT composites of varying PZT concentration that demonstrate
great piezoelectric characteristics. The proposed composite
piezoelectric material was achieved by dissolving the PZT powder inthe prepared P(VDF-TrFE) solution. Finally, the piezoelectric coefﬁcient
has been evaluated through the piezocapacitor and monitored by the
charge ampliﬁer. The P(VDF-TrFE)/PZT demonstrated much highpiezoelectric coefﬁcient , 5 times higher than those of pure P(VDFTrFE).
Author Interviews and Demonstrations
18:10 – 18:50, Ohmi 6

MEET

Quantum Dots Sessions
PHp

10:30 – 12:30 Thursday, Dec. 10
Ohmi 6 (Poster)

MEET1 16:05 – 17:25 Thursday, Dec. 10
PH3
9:00 – 10:00 Friday,
Dec. 11
MEET5 16:50 – 18:20 Friday,
Dec. 11
Ohmi 8 (Oral)

RECEPTION
Wednesday, Dec. 9, 2015
18:50 – 20:50
Prince Hall (3F)
Otsu Prince HotelSee page 12 for details

181

Wednesday

December 9

Workshop on
Display Electronic Systems
Wednesday, December 9
13:30 - 15:10

Ohmi 10

DES1: Various Visualization Technologies
Special Topics of Interest on Augmented Reality and Virtual Reality
Chair:
Co-Chair:Y. Oyamada, Tottori Univ., Japan
T. Mitasaki, NTT, Japan

DES1 - 1:
13:30

Invited Near-Eye Display of Light Fields
W. Wu, I. Tosic, N. Bedard, P. Llull, K. Berkner, N. Balram
Ricoh Innovations, USA

We address processing of light ﬁeld data captured using a plenoptic
camera for the purpose of display on a personal near-eye display. Our
technique optimizes the focal plane conﬁguration of a multi-focal
display for the captured data and produces signiﬁcantly better visualquality than the uniform focal plane conﬁguration.
DES1 - 2:
13:55

Invited Perceptual Illusions for Multisensory
Displays
T. AmemiyaNTT, Japan

Human perceptual properties have been applied for designing
multisensory display technologies. This paper overviews the sensoryillusion-based approach we have used to create a force display thatelicits illusory continuous force sensation by presenting asymmetricvibrations and a self-motion display based on a cross-modal effectbetween visual and tactile motion.
DES1 - 3:
14:20

Invited Duality in Computational Photography and
Display
S. Hiura
Hiroshima City Univ., Japan

Computational Photography is a new concept of imaging to offer
attractive functions such as blur reduction or posterior focus adjustment
by assuming the optical devices as an encoder of the light to images. In
this presentation, I will introduce several basic concepts andachievements in this ﬁeld.

182

Wednesday
DES1 - 4:
14:45

December 9

Invited Augmented Reality Visualization Fusion
Y. Oyamada
Tottori Univ., Japan

In this presentation, we introduce a new interaction in Augmented
Reality applications. The interaction is to overlap/overlay multiple
markers that mimics physical action such as mixing and merging
several objects.
----- Break ----15:30 - 16:55

Ohmi 10

DES2: Transparent Display Systems
Chair:
Co-Chair:

H. Okumura, Toshiba, Japan
A. Sakaigawa, Japan Display, Japan

DES2 - 1:
15:30

Invited A Concept of Immersive Telepresence“Kirari!”
M. Imoto, S. Uchida, E. Ashikaga, M. Wagatsuma,
K. HidakaNTT, Japan

We have been researching “Kirari!”, an immersive telepresence
platform that generates ultra-high realistic sensation in transporting
sporting events to the world in general in real time. Wherever its users
are, they can feel as if they are experiencing the atmosphere of the
sporting venue with highly realistic sensation.
Also presented in Innovative Demonstration Session (see p. 208)
Transparent Liquid Crystal Display with Three
States; Transparent State, White State and Black
State

DES

DES2 - 2
15:55

Y. Iyama, T. Sasaki, I. Aoyama, K. Hanaoka, T. Ishihara,
M. Yashiki, K. Takase, H. Miyata, H. Yoshida
Sharp, Japan
We have developed a transparent liquid crystal display (LCD) withthree states: “transparent,” “white（colored）” and “black.” We haveapplied the ﬁeld sequential color (FSC) method. Our transparent
display has the following properties: (1) high transmittance, (2) highcolor purity, and (3) no blurring.
Also presented in Innovative Demonstration Session (see p. 208)
DES2 - 3
16:15

A Novel RGBT Signal and Device for Transparent
Display
P.-L. Hsieh, H.-T. Lin
Chunghwa Picture Tubes, Taiwan

An RGBT signal and device is proposed for future transparent displays.
The RGBT transparent display simultaneously operates in "blackstate", "white state", and "transparent state". The level and area oftransparency can be controlled precisely by using the RGBT signal.
183

Wed. / Thu.
DES2 - 4
16:35

December 9 / 10
Improving the Image Quality of Transparent PDLC
Display by Using Dehazing Technique
C.-C. Liao, C.-W. Su
Chunghwa Picture Tubes, Taiwan

We proposed an effective dehazing technology to enhance the image
quality of transparent polymer-dispersed-liquid-crystal (PDLC) display.
The technique consists of two main parts, one is unsharp-maskingalgorithm and the other is color management function. Experimental
results demonstrate that the proposed method effectively improves theimage quality of the transparent PDLC display.
Author Interviews and Demonstrations
16:30 – 17:10, Ohmi 6

Thursday, December 10
13:40 - 15:40

Ohmi 6

Poster DESp1: Display Electronic Systems
DESp1 - 1

Development of 32-in. 8K4K LCD Driving System
H.-L. Hu, W.-C. Peng, J.-M. Kuang, X.-L. Chen, C.-H. Wu,
M.-J. Jou, L.-W. Chu, P.-S. Kuo, M. Wang, F. Zhao
Shenzhen China Star Optoelect. Tech., China

An advanced driving system for 32-in. 8K4K LCD which using GOA(Gate on array) and HSD (Half source driving) techniques has beendeveloped. This system support DP interface input, and mini-LVDS
output. Furthermore, a synchronization method was proposed to makeit possible to do some special image improving processes.
DESp1 - 2

Implementation of FHD Sub-Pixel Rendering Panel
D.-W. Kuo, J.-S. Liao, H.-H. Chen, H.-M. Su, W.-T. Tseng
Chunghwa Picture Tubes, Taiwan

CPT has proposed FHD SPR (Sub Pixel Rendering) panels which havespecial sub-pixel arrangement unlike conventional RGB arrangement.
They have been implemented in ﬁve inches panels with FHD
resolution. In this paper, we have also discussed the feature of these
SPR panels, include optical evaluation and circuit architecture.
DESp1 - 3

The Introduction of a Pixel Structure Design
X. Xu, A. Zhang, J. Chen, Q. Qiu, X. Chen, B. Liao
Shenzhen China Star Optoelect. Tech., China

In this paper, a pixel structure design was introduced, the adjacent two
sub-pixels having the same color in the adjacent two pixels sharing adate line, which can make data line reduced and aperture ratio
improved.

184

Thursday

December 10

DESp1 - 4

Low-Power and Highly Reliable a-Si Gate Driver with
DC-Type Driving Source
P.-C. Lai, F.-H. Chen, C.-E. Wu, C.-L. Lin
Nat. Cheng Kung Univ., Taiwan

This work presents a new gate driver circuit with AC-driving scheme
and DC-type driving source to improve the lifetime and the power
consumption. Simulation results show that the proposed circuit still
operates normally when the threshold voltage shifts to 21.5 V and thepower consumption is reduced by 32%.
DESp1 - 5

Novel PWM Circuits and Power Supply Design for
LED Lightings
C.-J. Ou, Z.-Y. Shi, S.-Z. Yang, J.-L. Cheng, T. Hu
Hsiuping Univ. of S&T, Taiwan

We will present a simple and cost effective PWM driving circuit. The
system is consisting with a specialized ﬁltering design with low cost
microchip inside the LED power regulator, such that the optimum
control of the LED lighting and the grey scale is reached.
DESp1 - 6L

Development of High-Speed LED Display System on
FPGA
T. Kobayashi*, A. Tsuji*, H. Mizushina*, S. Suyama*,
H. Yamamoto*,**,****Tokushima Univ., Japan**Utsunomiya Univ., Japan***JST, CREST, Japan

DESp1 - 7L

A Fast-Switching Current-Pulse Driver for LED
Backlight Applications
C.-W. Lu, Y.-C. Huang*, Y.-S. Lin*, H.-W. Chen**Nat. Tsing Hua Univ., Taiwan*Nat. Chi Nan Univ., Taiwan**Nat. United Univ., Taiwan

A fast-switching current-pulse driver for dimming controllers of LED
backlight applications is proposed. The proposed current-pulse driver
was fabricated in 0.25-Mm 1P4M BCD high-voltage process. The
measured rising time and falling time of the LED current are 120 ns
and 12 ns, respectively, when the load is a 7-LED string.

185

DES

We have designed and implemented high-speed LED display controller
and ultrasonic distance sensor controller on FPGA. Our system drives
P3-LED panels and ultrasonic distance sensor in parallel. As the result,latency from sensor input to display can be reduced to 5.8 ms.

Thursday

December 10

13:40 - 15:40

Ohmi 6

Poster DESp2: Image Processing for Augmented Reality
Special Topics of Interest on Augmented Reality and Virtual Reality
DESp2 - 1L

AR Marker Available on Foldable Surfaces
H. Sasanuma, Y. Manabe, N. Yata
Chiba Univ., Japan

This paper is focused on marker-based AR technology. Existing AR
markers are almost available on only ﬂat surface. Therefore, this paper
proposes an original AR marker design and processing method thatcan recognize the marker on the foldable and cylindrical surface.
----- Break ----16:00 - 17:15

Ohmi 10

DES3: Application for Automobiles
Chair:
Co-Chair:K. Morita, Nat. Trafﬁc Safety & Environment Lab., JapanT. Fujine, Sharp, Japan

DES3 - 1:
16:00

Invited Technical Evolution of Automotive
Headlamps
S. Yamamura
Koito Manufacturing, JapanThe latest automotive headlamps come with an adaptive driving beam
(ADB) system for the high-beam, which selectively shades oncoming or
preceding vehicles from glare based on inputs from an onboard
camera. Future high-resolution ADB systems are expected to include
functions such that draws letters or symbols on the road surface ahead.
DES3 - 2:
16:25

Invited Standardization of Camera Monitor System(CMS) for Mandatory Rearview Mirrors for Road
Vehicles Replacement
H. Shinki, N. Yoshitsugu*, E. Oba**, M. Oka***
Faltec, Japan*Nissan Motor, Japan**Sony, Japan***UD Trucks, Japan

Summarized introduction of new ISO standard ISO 16505 “Road
vehicles – Ergonomic and performance aspects of Camera Monitor
Systems – Requirements and test procedures” and its technicalbackground. The study for the regal approval in regard to this system isbased on this standard.

186

Thursday
DES3 - 3:
16:50

December 10
Invited Consideration of Brightness Contrast Ratio
Which Inﬂuences Visibility of Head-Up Display
M. Enomoto*,**, M. Sekine*, K. Morita*, K. Tanaka***Nat. Trafﬁc Safety & Environment Lab., Japan**Univ. of Electro-Commun., Japan

Authors previously measured head-up display (HUD) visibility, brake
response time and others using a driving simulator, among which HUD
visibility was considered to be related to the contrast ratio between the
HUD and background. In this study we measured luminance outside toverify the results obtained in the indoor experiment.
----- Break ----18:05 - 19:10

Ohmi 10

DES4: Image Processing
Chair:
Co-Chair:A. Sakaigawa, Japan Display, JapanT. Fujine, Sharp, Japan

DES4 - 1

Withdrawn

DES4 - 2:
18:05

Invited Finely Categorized Clothing Recognition
K. Sudo, T. Umeda, K. Murasaki, J. Shimamura,
A. KojimaNTT, Japan

DES4 - 3
18:30

Advanced RGBW OLED Display System with Novel
RGB-to-RGBW and Subpixel Rendering Algorithm
H. Li, Y.-F. Jin, S.-S. Syu, M.-J. Jou, J.-W. He, L. Li*,R. Wang*
Shenzhen China Star Optoelect. Tech., China*Peking Univ., China

The new RGB-to-RGBW and subpixel rendering were proposed. The
former is applied to enhance luminance and decrease color-distortion,
the latter is designed to scale the virtual resolution. Experimental resultshows that the proposed method increases the average intensity by
23% with a color-distortion level of 0.013, meanwhile it almost identicalto real RGB resolution.

187

DES

We propose two methods for recognizing ﬁne-grained clothing
categories to achieve clothing-image retrieval based on similarities
covering ﬁne-grained patterns, e.g., narrow or wide stripes and ﬁnegrained attributes, e.g., shapes of necklines and sleeve lengths. Our
method incorporates prior knowledge of attributes and the position ofpatterns, which improves recognition accuracy.

Thursday
DES4 - 4
18:50

December 10
Adaptive Saturation Enhancement Based on MinMax Value and Intensity Gray-Levels Histogram
Feedback
H. Li, J. L. Zhu, S.-S. Syu, M.-J. Jou
Shenzhen China Star Optoelect. Tech., China

This paper proposed one method about improving saturation of RGB
image based on HSI model. We improved saturation with an adaptive
exponent, and used intensity component with differential gray-levels
histogram adjusting it, and designed a conﬁgurable mechanism tomodify contrast and colorfulness by a controlled parameter. Experimentshows excellent performance.
Author Interviews and Demonstrations
19:00 – 19:40, Ohmi 6
Supporting Organizations:Kansai Section, IEEE
The Society of Automotive Engineers of Japan (JSAE)
Special Interest Group on Mixed Reality (SIG-MR), The Virtual
Reality Society of Japan
Technical Committee on Electronic Information Displays, Electronics
Society, IEICE
Technical Committee on Image Engineering, Information and
Systems Society, IEICE(IE)
Technical Group on Information Display, ITE
Technical Group on Three-Dimensional Image Technology, ITE

EXHIBITION
12:00 – 17:00 Wednesday, Dec. 9
10:00 – 18:00 Thursday, Dec. 10
10:00 – 14:00 Friday,
Dec. 11
Lobby (2F)
Otsu Prince HotelFree admission with your registration name tag
188

Thursday

December 10

Workshop on Flexible Electronics
Thursday, December 10
13:40 - 15:40

Ohmi 6

Poster FLXp1: Flexible Electronics 1
FLXp1 - 1

Low Temperature Silicon Nitride Thin Films for
Moisture Barrier Layers by a PECVD Process
S. J. Kim, S. H. Yong, H. J. Ahn, S. Gatineau*,
H. Chae
Sungkyunkwan Univ., Korea*Air Liquide Labs., Korea

Low temperature silicon nitride thin ﬁlms were deposited by a plasma
enhanced chemical vapor deposition (PECVD) process for moisturebarrier layers. Inorganic thin ﬁlms was fabricated in various process
conditions. In this research, Water vapor transmission rate (WVTR) of
below 10-2 g/m2/day was achieved.
FLXp1 - 2

Al2O3/ZrO2 Thin Film Encapsulation with Spatially
Resolved ALD Process
S. H. Yong, S. J. Kim, H. Chae
Sungkyunkwan Univ., Korea

Al2O3 and ZrO2 thin ﬁlms were deposited on polymer substrates asmoisture barrier layers by a spatially resolved ALD process. This
inorganic layers was applied for OLED thin ﬁlm encapsulation.
FLXp1 - 3

Optimization of Al2O3/ZrO2 Nanolaminate Structureon the Plastic Substrates for the Flexible Display
J. H. Eun, Y. S. Paek, H. G. Kim, M. S. Kim, Y. C. Kim,
S. S. Kim
Kyung Hee Univ., Korea

FLXp1 - 4L

Flexible Reﬂective LCDs Using Stainless Steel
Substrate and Optical Compensation Technology
A. Sato, T. Ishinabe, H. Fujikake
Tohoku Univ., Japan

A ﬂexible reﬂective liquid crystal display using stainless steel with heat
resistance and polycarbonate substrates compensating a phaseretardation of VA-mode liquid crystal was developed. We realized agood contrast ratio over 20:1. The stainless steel substrate is apromising technology to realize high-quality ﬂexible displays with low
power consumption.
189

FLX

Al2O3/ZrO2 nanolaminate was deposited on plastic substrates by low
frequency plasma-enhanced atomic layer deposition (PEALD) process.
In order to enhance the barrier properties of polymeric substrates, thelayer structure was optimized with various process conditions.

Thursday
FLXp1 - 5L

December 10
Fabrication of Thin Flexible Liquid Crystal
Display Using Dye-Type In-Cell Polarizer
D. Fujiwara, T. Ishinabe*, N. Koma, H. Fujikake*Polatechno, Japan*Tohoku Univ., Japan

We have developed an in-cell polarizer using dye type polarizing ﬁlm.
This polarizing ﬁlm has high heat resistances and ultraviolet light
exposure, and enables to insert the polarizing ﬁlm into the LC panel.
We successfully achieved thin ﬂexible TN-mode liquid crystal device
with high ﬂexibility and high contrast ratio.
FLXp1 - 6L

The effect of Mechanical Stress on the Properties
and Stability of In-Ga-Zn-O Thin Film Transistors
C. S. Kim, N. D. Trung, H.-S. Kim
Chungnam Nat. Univ., Korea

Amorphous In-Ga-Zn-O (a-IGZO) thin-ﬁlm transistors (TFTs) were
fabricated on polyimide/glass substrates and mechanically detachedfrom carrier glass. The electrical properties and device stability were
evaluated on both ﬂat and bending state. The obtained bending
performance and bias-stability of a-IGZO TFTs were demonstrated to
be promising for the next-generation ﬂexible display.
FLXp1 - 7L

Stable Crystallization of a-Si Film on a Flexible
Substrate
T. Ashitomi, T. Harada, K. Nakao, C. J. Koswaththage,
T. Okada, T. Noguchi, N. Kawamoto*, H. Ikenoue**,T. Okuyama***, A. Suwa****, K. Noda****Univ. of the Ryukyus, Japan*Yamaguchi Univ., Japan**Kyusyu Univ., Japan***TOYOBO, Japan****GIGAPHOTON, JapanThe ELA using high repetition pulse for a-Si ﬁlm on ﬂexible sheet is
performed. As a result of multi-shots ELA, the crystal structure of Si
ﬁlm on oxide buffer layer was stably obtained in lower pulse energy
density. High performance TFT on ﬂexible sheet is expected.

190

Thursday

December 10

13:40 - 15:40

Ohmi 6

Poster FLXp2: Flexible Electronics 2
Special Topics of Interest on Oxide-Semiconductor TFT
FLXp2 - 1

The Instability Change of Flexible a-IGZO TFTs
under Different Mechanical Stress
H.-J. Jeong, K.-C. Ok, H.-M. Lee, J.-S. Park
Hanyang Univ., Korea

Amorphous InGaZnO (IGZO) thin ﬁlm transistors (TFTs) were made on
the polyimide (PI) substrate. We evaluated transistor performance andinstability depends on mechanical stress, various bending radius (10mm, 5 mm and 2 mm) were applied to ﬂexible substrate. The variationin the threshold voltage under NBTS was –0.58 V (without bending)/–6.48 V (2 mm).
FLXp2 - 2L

Highly Robust Flexible Oxide TFTs Achieved by
Plastic Substrate with Embedded CNT/GO
Backbone
Y.-H. Kim, J. G. Um, M. Mativenga, J. Jang
Kyung Hee Univ., Korea

We demonstrate the highly robust ﬂexible oxide TFT fabricated on 5
Mm-thick PI. Particularly, by process employed of embedding thegraphene oxide and carbon nanotubes mixture into the PI substrate, it
makes excellent functionality as ﬂexible substrate that self-standing
without any supporting materials and prevent from the electrostatic
discharge effect.
FLXp2 - 3L

Thermal Analysis of Oxide Thin Film Transistor with
Fluorinated Silicon Nitride Gate Insulator
H. Yamazaki, Y. Ishikawa, M. N. Fujii, J. P. S. Bermundo,
E. Takahashi*, Y. Andoh*, Y. Uraoka
NAIST, Japan*Nissin Elec., Japan

191

FLX

We found that amorphous In-Ga-Zn-O thin-ﬁlm transistors with W=5
Mm showed higher mobility than TFTs with W=90 Mm, and showed asharp mobility curve. The results of thermal analysis show local heating
at the edge of the drain. We conclude that these effects are caused bymobile minus ions.

Thursday

December 10

13:40 - 15:40

Ohmi 6

Poster FLXp3: Flexible Electronics 3
Special Topics of Interest on Printed Electronics
FLXp3 - 1

Development of Novel Primer Material Suitable for
COP Film and Ag Nano-Ink
T. Yamate*,**, E. Mieda*, K. Kumazawa*, H. Suzuki*,
M. Akazome***Nippon Soda, Japan**Chiba Univ., Japan

We have developed a unique organic-inorganic hybrid coating agent
suitable for a primer which connects Ag nano-ink to COP ﬁlm. This
material forms the glass-like surface on the topmost surface of thehybrid layer after UV irradiation. Therefore, Ag nano-ink can adhere
strongly with glass-like surface.
FLXp3 - 2L

Flexible Glass Substrate on Roll to Roll Gravure
Off-Set Printing Process
K.-T. Kuo, S. M. Garner, J.-C. Lin, P.-L. Tseng, S.-M. Lin,
M.-H. Huang, R. L. Smith, T. H. Chou*, C. W. Hsieh*,
Y. M. Wang*, S. Yang*, K. G. Wang*, H. Y. Lin*
Corning, USA*ITRI, Taiwan

Glass enables high-quality and long-life devices compared to plastic inelectronics industry. The ultra-slim ﬂexible glass also allows for new
device designs and continuous manufacturing enabled by roll-to-roll(R2R) processes. This paper describes how gravure off-set printing
applied to R2R process and made functional touch sensors on ultraslim ﬂexible glass.
FLXp3 - 3L

Control and Improvement of Electrical Performanceof Solution-Processable Organic Transistors by
Spin Coating from Mixed Organic Solvents
R. Nakamichi*, T. Nagase*,**, T. Kobayashi*,**,
Y. Sadamitsu***, H. Naito*,***Osaka Pref. Univ., Japan**The Res. Inst. for Molecular Elect. Devices, Japan***Nippon Kayaku, Japan

We have developed a simple method to control and improvethe electrical characteristics of solution-processable OTFTs based on
dialkylbenzothienobenzothiophenes by using mixed organic solvents.
Top-gate OTFTs processed by spin coating from mixed non-halogen
solvents exhibit high average ﬁeld-effect mobility of 8.4 cm2V –1s–1 andlow threshold voltage of ­0.18 V.
----- Break -----

192

Thursday

December 10

17:40 - 17:50

Ohmi 8Opening
Opening Remarks
17:40
M. Kimura, Nagaoka Univ. of Tech., Japan
17:50 - 19:20

Ohmi 8

FLX1/INP4: Flexible Input Devices
Chair:
Co-Chair:T. Shiro, Teijin, JapanK. Yamazaki, Corning Japan, Japan

FLX1/
INP4 - 1:
17:50

Invited Foldable AMOLED with Integrated On-Cell
Touch Sensor for Mobile Device Applications
J. Chen, J.-C. Ho, G. Chen, M.-H. Yeh, C.-C. Lee
ITRI, Taiwan

Based on ITRIʼs Flexible Universal Plane (FlexUP) technology, we haverecently developed a coverless on-cell touch panel with gas barrier. In
this report, we overcome ﬂexibility and interference issues with the oncell touch panel, and successfully demonstrated a foldable AMOLED
integrated with coverless on-cell touch panel at 5mm folding radius.
FLX1/
INP4 - 2

Withdrawn

FLX1/
INP4 - 5L:
18:15

Invited Inkjet-Printed Electrodes for Stretchable
Wearable System
Y. Hong, S. Kim, T. Kim, J. Byun, B. Lee, H. Kim, S. Choi,
E. Oh, S. Chung, J. Lee
Seoul Nat. Univ., Korea

FLX1/
INP4 - 3
18:40

Evaluation of Electrochemical Migration of ITO/Ag/ITO Structure for Touch Panel Sensor
Y. Toshimori, T. Ueda, F. Kikuchi, H. Ishii, I. Shiono,
S. Zhang
Mitsubishi Materials, Japan

The purpose of this study is to evaluate the electrochemical migrationof ITO/Ag/ITO structure for Touch Panel Sensor and to prepare thedata necessary to decide the evaluation standard of reliability for
application of ITO/Ag/ITO to electrode materials. Our evaluation resultshows the guideline of the new evaluation standard.
193

FLX

For wearable, body-attachable electronic system, the strategy ofcombining rigid islands and stretchable interconnects is one of the bestnear-term solutions. In this talk, as part of our effort toward stretchable
hybrid electronic system, inkjet-printed stretchable electrodes based on
silver nano-particle, SWCNT, and nano composite materials is
discussed.

Thu. / Fri.

December 10 / 11
Ultra High Resolution Copper Lithography Not
Requiring Fine Mask Design Rules and Without
Damaging Copper

FLX1/
INP4 - 4
19:00

M. A. Hsu, C.-H. Lin, R.-C. Lian, A. Igawa*
Consistent Elect. Materials, Taiwan*eChem Solutions Japan, Japan
Applying common photolithography process to copper substrate withnovel formulated lithographic chemicals, extremely ﬁne copper pattern
could be obtained without using ﬁne mask patterns and with no copper
damaging. Very precise metal mesh or copper circuit can be formed
onto not only Si or glass substrate but also ﬂexible ﬁlm.
Author Interviews and Demonstrations
19:00 – 19:40, Ohmi 6

Friday, December 11
9:00 - 10:30

Ohmi 3

FLX2/LCT5: Flexible LCDs
Chair:
Co-Chair:H. Funahashi, Kagawa Univ., Japan
H. Okada, Toyama Univ., Japan

FLX2/
LCT5 - 1:
9:00

Invited Advanced Polymer and LC Technologies forHigh Quality Flexible Displays
H. Fujikake, H. Sakai, A. Sato, E. Uchida, D. Sasaki,
Y. Obonai, Y. Isomae, T. Ishinabe
Tohoku Univ., JapanFor a practical ﬂexible liquid crystal display, ﬁne polymer spacer walls
and networks are formed in a nematic liquid crystal layer for stabilizing
substrate gap. Total optical compensating design methods using plastic
substrates are also presented for wide viewing angle, and ﬂexible
backlight is discussed for whole ﬂexible display systems.
FLX2/
LCT5 - 2
9:25

Uniform Lying Helix of Cholesteric LC Aligned byMeans of Coating Method with Electric Treatment
N. Endo, M. Kimura
Nagaoka Univ. of Tech., JapanThe feature of Uniform Lying Helix (ULH) is its fast response speed
whereas the alignment process of ULH is not simple. Previously we
proposed a novel fabrication process of liquid crystal display (LCD) bymeans of slit coater. Paying attention to the shear ﬂow force, weapplied this method to align the ULH with using electric ﬁeld treatment.
Optimum fabrication condition and characteristics of ULH will bedemonstrated.

194Friday

December 11

Invited Development of World’s Largest 60-in. Roll
FLX2/
LCT5 - 3L: Display
9:45
M. Shigeta, M. Kawabata, K. Kobayashi, M. Teragawa
Sakai Display Prods., JapanThe 60-in. roll display with radius 500 mm has been developed. Noalignment defect due to the displacement of the panel appears for
UV2A mode, and excellent optical performance is conﬁrmed.
As the roll display has the perspective features and texture gradient,
the three dimensional sensation is enhanced by the physiologicaleffects.
FLX2/
LCT5 - 4L
10:10

Novel Alignment-Process-Free Flexible VALCDs with highly-Stable LC Alignment
M. Yamamoto, K. Asanuma, Y. Iimura
Tokyo Univ. of A&T, Japan

We investigate fabrication processes of high-performance ﬂexible VALCDs. It is shown that using special-shaped pole spacers and a PSS
method gives multi-domain pixel structure with highly-stable LCalignment. A fabricated ﬂexible VA-LCD is highly resistive against
external stresses such as bend deformation.
----- Break ----10:40 - 12:00

Ohmi 2

OLED5/FLX3: Flexible OLED and OTFT
Chair:
Co-Chair:Y. Sakai, Mitsubishi Chem. S&T Res. Ctr., Japan
T. Kamata, AIST, Japan

OLED5/FLX3 - 1:
10:40

Invited Flexible OLED Fabricated with Fully R2R
Process and Their Evaluation Technology
Y. Mitamura, T. Minakata, A. Sugimoto, M. Tanamura,Y. Ohzu, A. Suzuki, N. Ibaraki, H. Tomiyasu
Chem. Materials Evaluation & Res. Base, Japan

OLED5/FLX3 - 2
11:00

Accurate Evaluation of Water Vapor Transmission
for Flexible OLEDs
A. Suzuki, A. Uehigashi
Chem. Materials Evaluation & Res. Base, JapanAn evaluation technique for determining the water vapor transmission
rate (WVTR) has been developed using our reference ﬁlms withmultiple pinholes created strategically. The WVTR was reliably obtained
at a level of 10­5 g/m2/day. The ﬁlms can be widely applied to accurately
calibrate several WVTR measurement systems.
195

FLX

Flexible organic light-emitting diodes (OLEDs) on continuous plastic
ﬁlm have been successfully fabricated with full roll-to-roll (R2R)
processes and exhibit good stability and high performance comparable
to OLEDs on glass. Degradation due to penetration of moisture havebeen studied qualitatively and respectively.

Friday

December 11

OLED5/FLX3 - 3

Withdrawn

OLED5/FLX3 - 5L
11:20

Solution-Processed, Air-Stable N-Type Organic
Single Crystal Microribbon Transistors
C.-Y. Tan, P.-Y. Tseng, C.-W. Wang, C.-Y. Hung,
C.-W. Tsai, G.-W. Hsieh
Nat. Chiao Tung Univ., Taiwan

We used halogen-substituted perylene diimide derivatives to form selfassembled microribbons for organic ﬁeld effect transistors. Devices
based on a network of microribbons have showed typical n-channelﬁeld effect behaviors with average ON/OFF current ratio >103 andrevealed remarkable stability under ambient air over 90 days.
OLED5/FLX3 - 4
11:40

Solution Processed P-Type Top-Gate SmallMolecular Organic TFT
H.-C. Hsiao, Z.-X. Jiang, S. Su, H.-Y. Xu, M. Zeng,
B. Sun, C.-Y. Lee, H. Zhou*, S. Zhang*
China Star Optoelect. Tech., China*Peking Univ., China

A p-type organic thin ﬁlm transistor (OTFT) technology on plastic
substrates was developed, in which, a small molecular organic
semiconductor (OSC) material was used as channel layer. The
fabricated p-OTFT at processed temperature below 120 C shows ahigh hole mobility of 3.4 cm2/Vs and an excellent performance stability
under gate electrical stress.
Author Interviews and Demonstrations
12:00 – 12:40, Ohmi 6----- Lunch ----13:30 - 14:40

Ohmi 2

FLX4: Flexible Printed Electronics
Special Topics of Interest on Printed Electronics
Chair:
Co-Chair:T. Sekitani, Osaka Univ., Japan
M. Ito, Toppan Printing, Japan

FLX4 - 1:
13:30

Invited Exploring Low-Dimensional Charge
Transport Phenomena in Solution-Processed Metal
Oxide Superlattice Transistors
Y.-H. Lin, K. Zhao*, R. Li**, A. Amassian*, T. D. Anthopoulos
Imperial College London, UK*King Abdullah Univ. of S&T, Saudi Arabia**Cornell Univ., USA

We report on metal oxide superlattice systems grown from solution andtheir use in high electron mobility transistors. On the basis oftemperature-dependent electron transport measurements and carrier
distribution evaluation, we argue that the enhanced performance arises
from the presence of 2-dimensional electron gas-like systems formedat the oxide-oxide heterointerfaces.
196

Friday
FLX4 - 2:
13:55

December 11
Invited Fluorophilicity as Selection Criterion ofSolvents for Printed Organic Electronics
Y. Kuwana, T. Abe, N. Shirota, T. Sakurada, M. Obi
Asahi Glass, Japan

We investigated the deterioration of carrier mobility of organic thin ﬁlm
transistors after immersing into various solvents containing ﬂuorine.
The deterioration was correlated with the ﬂuorophilicity, the partition
ratio between solvents containing ﬂuorine and without ﬂuorine. The
ﬂuorophilicity will be a useful parameter for screening the process
solvent.
FLX4 - 3
14:20

Highly Stable Transparent Conductive Coatings on
Ultra-Thin Glass for Flexible Devices
M. Junghaehnel, S. Weller, T. Gebel*, W. Skorupa**,
T. Schumann**
Fraunhofer, Germany*DTF Tech., Germany**Helmholtz-Zentrum Dresden-Rossendorf, Germany

Ultra-slim ﬂexible glass is an emerging ﬂexible substrate material for
ﬂexible displays, devices or lighting. 100 Mm thick ﬂexible glasses with amaximum dimension of 250 300 mm2 were deposited with ITO andIZO at room temperature. The ﬁlms were reﬁned by in-line ﬂash lamp
annealing in the millisecond time range.
----- Break ----15:10 - 16:45

Ohmi 2

FLX5: Flexible Displays and Devices
Chair:
Co-Chair:H. Maeda, Dai Nippon Printing
K. Uemura, Nippon Steel & Sumitomo Metal, Japan

FLX5 - 1:
15:10

Invited Designing Flexible and Stretchable Circuits
and Displays*imec, Belgium**Katholieke Univ. Leuven, Belgium***Holst Ctr., the Netherlands

Technologies on ﬂexible and stretchable foils suffer from intrinsic
parameter variations. A detailed analysis of these variations enables
designers to predict the soft yield for different topologies of ﬂexible
circuits. This methodology has been applied to designs of organic andoxide NFC tags, microprocessors and integrated linedrivers fordisplays.

197

FLX

J. Genoe*,**, K. Myny*, F. De Roose*,**, S. Steudel*,J.-L. van der Steen***, G. H Gelinck***, P. Heremans*,**,***

Friday
FLX5 - 2

December 11
Withdrawn

FLX5 - 5L: Invited Plastic Liquid Crystal Displays Enabled
15:35
by Organic Transistor Technology
J. Harding, M. Banach
FlexEnable, UK
The use of a low-temperature Organic TFT process opens the door to
include new classes of materials in active matrix backplanes. The
authors show an IPS-LCD on plastic made possible through the
adoption of low-birefringence TAC substrates and a stress-freedemount mechanism.
FLX5 - 3:
16:00

Invited High-Mobility Short-Channel Organic
Transistors with Photolithography-Patterned Top
Electrodes
T. Uemura, T. Sekitani
Osaka Univ., Japan

We report novel fabrication processes for high-mobility organic
transistors with photolithography-patterned top electrodes. In the topcontact transistors, small contact resistance of ~50 Ωcm was realized
by a proper annealing process. As a result, high mobility ~4.5 cm2/Vs
and high on/off ratio ~109 were achieved in 5-Mm channel-lengthtransistors.
FLX5 - 4
16:25

Fabrication of Low Reﬂectivity Metal Grid
Transparent Electrode on Flexible Plastic Substrateby Adopting Self-Patterned Black Polymer
J.-C. Choi, J.-S. Park, H.-R. Kim
Kyungpook Nat. Univ., Korea

We fabricated metal grid transparent electrode on ﬂexible plastic
substrate with low reﬂectivity by adopting self-patterned black polymer
layer under the electrode pattern. In order to make metal grid electrodepattern, doctor blade method was introduced. Furthermore, selective
etching process was used to form self-patterned black polymer.
----- Break -----

Author Interviews and Demonstrations
18:10 – 18:50, Ohmi 6
Supporting Organizations:Technical Committee on Electronic Information Displays, Electronics
Society, IEICE
Technical Group on Information Display, ITE

198

Wednesday

December 9

Workshop on
Touch Panels and Input Technologies
Wednesday, December 9
13:30 - 13:35

Ohmi 8

INP

Opening
Opening Remarks
13:30
N. Hashimoto, Citizen Holdings, Japan
13:35 - 14:55

Ohmi 8

INP1: Interactive Technologies
Chair:
Co-Chair:K. Imoto, Toshiba, Japan
H. Haga, NLT Techs., Japan

INP1 - 1
13:35

Integrated Solutions of Electromagnetic Touch
SensorF. Lu, C.-M. Liu*, Y.-K. Lin*, S.-L. Jin, Q.-J. Yao,
H.-S. Wu*, Y. Wu, T.-Y. Wu, C.-M. Liu*, J. Ma
Shanghai Tianma Micro-Elect., China*KYE Systems, Taiwan

Novel solutions of integrated electromagnetic touch sensors were
proposed. Electrodes in a mutual capacitive touch panel were utilized
to receive electromagnetic touch signals simultaneously. In-cellelectromagnetic touch sensors and the accompanying parasite
capacitance effect were also studied theoretically and experimentally.
INP1 - 2
13:55

A Novel Technologies of High Resolution Touch on
Cell (ToC) LCD with Passive Pen Function
S.-Y. Wu, Y.-L. Ho, Y.-C. Chen, H.-H. Chen, H.-M. Su,
W.-Z. Zeng
Chunghwa Picture Tubes, Taiwan

CPT has successfully developed the low cost and high resolution withadvanced touch on cell (ToC) display. The 8-in. high resolution (1600
2560, 377 ppi) with touch on cell (ToC) display that can support 2 mm
passive pen writing.

199

Wednesday
INP1 - 3:
14:15

December 9

Invited Design Everything by Yourself
T. Igarashi
Univ. of Tokyo, Japan

We envision that computer tools that help people to design things bythemselves can enrich their lives. To that end, we develop innovativeinteraction techniques for end users to (1) create rich graphics (2)design their own real-world, everyday objects, and (3) design the
behavior of their personal robots.
INP1 - 4L
14:40

Pen Based User Interface for Handwritten Document
Handling
K. Imoto
Toshiba, JapanTo allow users to perform natural input operations without the need fora keyboard or mouse, the handwritten notes apps that consist of
handwriting retrieval and handwritten graphics formatting have beendeveloped. We provide a brief introduction to managing facilities for
handwritten documents and discuss about pen interface.
----- Break ----15:10 - 16:40

Ohmi 8

INP2: Touch Panel
Chair:
Co-Chair:J. Taylor, Sharp Labs. of Europe, UK
D. Ito, Japan Display, Japan

INP2 - 1:
15:10

Invited Improved Signal Processing for Capacitive
Touch Panel with Conductive and Non-conductive
Object Distinction
J. Taylor, C. Brown, A. Kay, D. Gallardo, S. Maguire,
Y. Sugita*, K. Kida*
Sharp Labs. of Europe, UK*Sharp, Japan

We present novel algorithms for the detection, classiﬁcation andtracking of conductive and non-conductive probes in the vicinity of amutual-capacitance touch panel with enhanced electrode pattern.
Also presented in Innovative Demonstration Session (see p. 208)
INP2 - 2
15:35

3D Shaped Touch Panel with Transparent Carbon
Nanotube Electrodes
R. Hattori, O. Watanabe*, S. Takada*
Kyushu Univ., Japan*Toray Inds., JapanA three-dimensional transparent touch panel was formed by thermally
molding a transparent plastic ﬁlm/board with a carbon nanotube (CNT)
layer that acted as a touch-sensing electrode patterned by laser
ablation. A self-capacitive touch-sensing method with a low side current
was employed, which enabled multitouch, hover touch, and glove
touch.
200

Wed. / Thu.

December 9 / 10

INP2 - 3
15:55

High Integration Touch in Cell Module
W.-J. Yang, C.-Y. Hsu, C.-C. Chang, Y.-C. Li, H.-H. Chen,
H.-M. Su, W.-T. Tseng
Chunghwa Picture Tubes, Taiwan

INP2 - 4:
16:15

Invited Newly Developed 5.5-in. WQHD Display with
Hybrid In-Cell Capacitive Touch Technology
D. Ito, T. Suzuki, K. Noguchi, Y. Nakajima
Japan Display, Japan

This paper is a presentation of the 5.5-in. WQHD (1440 2560) IPSmode LTPS display with a newly developed hybrid In-cell capacitive
touch technology, and introducing the technology trend of In-cell touch
panel.
Author Interviews and Demonstrations
16:30 – 17:10, Ohmi 6

Thursday, December 10
9:00 - 10:45

Ohmi 8

INP3: AR and Interactive Systems
Special Topics of Interest on Augmented Reality and Virtual Reality
Chair:
Co-Chair:M. Sato, MIT Media Lab, USA
N. Hashimoto, Citizen Holdings, Japan

INP3 - 1:
9:00

Invited Development of a TV System Augmented
Outside the TV Screen
H. Kawakita*,**, M. Uehara*, T. Nakagawa*, M. Sato***NHK, Japan**Tokyo Inst. of Tech., Japan

We advocated “Augmented TV” that gives an appearance ofconnecting the onscreen world, captured by the TV camera, to the realworld in front of the TV screen. To realize the goal, we have developed
AR system for TV video images, which is characterized by smoothnessof the connecting representation.
Also presented in Innovative Demonstration Session (see p. 208)

201

INP

Chunghwa picture tubes, Ltd. has been successfully developed 5.5-in.
HD FFS mode a-Si display with a novel development which wasembedded type capacitive touch In-cell was driven by the TDDI IC. In
this structure that has high integration, more cost-effective andcompact size.

Thursday
INP3 - 2:
9:25

December 10
Invited Disappearing Touchscreens: Making theWorld Interactive without Instrumenting It
M. Sato*,***MIT Media Lab, USA**Univ. of Tokyo, Japan

Interaction with physical objects and information in the real world is
becoming increasingly important. However, conventional methods
require adding physically complex touch sensors or tags. In this paper,
we discuss several approaches to make the world more interactive
without any need for these technical implementations.
INP3 - 3:
9:50

Invited Haptic Technologies for Surface Interaction
H. Kajimoto
Univ. of Electro-Commun., JapanAs the touch panel does not have physical cues such as bumps andedges of a keyboard, applying haptic (tactile) display technology to thetouch panel was studied intensively. This talk introduce current trendsof haptic interface for surface interaction, as well as our recent studies
on electro-tactile displays.
INP3 - 4L
10:15

Demonstration of Interactive 3D Display Using
Holographic Screen and Consumer-Use 4K
Projector
T. Nakamura, S. Sakurai, S. Igarashi, M. Yamaguchi
Tokyo Inst. of Tech., Japan

We previously proposed an interactive 3D display, which is based on atransparent holographic screen and a projector-camera system. In thisreport, we demonstrate the interactive 3D display with improved 3D
image quality using a holographic screen and a consumer-use 4K
projector whose pixel count is 4096 2160.
INP3 - 5L
10:30

Character Recognition System Using Cellular
Neural Network Suitable for Integration on
Electronic Displays–Development of Simulator and Evaluation of
Operation–
T. Kameda*, M. Kimura*,**, Y. Nakashima**NAIST, Japan**Ryukoku Univ., JapanWe are developing cellular neural networks that might be suitable for
integration on electronic displays. In order to decide best architecture of
the neural networks, we developed a character recognition simulator.
We conﬁrmed that the neural networks can learn multiple characters.
Also presented in Innovative Demonstration Session (see p. 208)----- Lunch -----

202

Thursday

December 10

13:40 - 15:40

Ohmi 6

Poster INPp1: Touch Panel
INPp1 - 1

Oxidation Resistant Cu-Ni-Mn Cap Layer for Bezel
Interconnection in the Film Touch Panels
Y. Shida, H. Goto, H. Okuno*, M. Kanamaru*, T. Kugimiya

INP

Kobe Steel, Japan*Kobelco Res. Inst., Japan
We have developed a Cu-Ni-Mn cap layer which is superior in antioxidation properties and etching processability. The reﬂectance changeamount of the Cu interconnections with the Cu-Ni-Mn cap layer after
annealing in air was suppressed by 6% or less.
INPp1 - 2

Withdrawn

INPp1 - 3L

Three-Dimensional Finger and Hand GestureInteractive Displays
H.-K. Liu, H.-I Ning, Y.-C. Fan
Nat. Taipei Univ. of Tech., Taiwan

In this article, we proposed a three-dimensional ﬁnger and hand
gesture interactive displays. We use stereo camera to capture stereo
image. And it calculate disparity map and depth map for supplying usera real-time interface based on hand gesture and ﬁnger action.
----- Break ----17:50 - 19:20

Ohmi 8

FLX1/INP4: Flexible Input Devices
Chair:
Co-Chair:T. Shiro, Teijin, JapanK. Yamazaki, Corning Japan, Japan

FLX1/
INP4 - 1:
17:50

Invited Foldable AMOLED with Integrated On-Cell
Touch Sensor for Mobile Device Applications
J. Chen, J.-C. Ho, G. Chen, M.-H. Yeh, C.-C. Lee
ITRI, Taiwan

Based on ITRIʼs Flexible Universal Plane (FlexUP) technology, we haverecently developed a coverless on-cell touch panel with gas barrier. In
this report, we overcome ﬂexibility and interference issues with the oncell touch panel, and successfully demonstrated a foldable AMOLED
integrated with coverless on-cell touch panel at 5 mm folding radius.
FLX1/
INP4 - 2

Withdrawn

203

Thursday
FLX1/
INP4 - 5L:
18:15

December 10
Invited Inkjet-Printed Electrodes for Stretchable
Wearable System
Y. Hong, S. Kim, T. Kim, J. Byun, B. Lee, H. Kim, S. Choi,
E. Oh, S. Chung, J. Lee
Seoul Nat. Univ., Korea

For wearable, body-attachable electronic system, the strategy ofcombining rigid islands and stretchable interconnects is one of the bestnear-term solutions. In this talk, as part of our effort toward stretchable
hybrid electronic system, inkjet-printed stretchable electrodes based on
silver nano-particle, SWCNT, and nano composite materials is
discussed.
FLX1/
INP4 - 3
18:40

Evaluation of Electrochemical Migration of ITO/Ag/ITO Structure for Touch Panel Sensor
Y. Toshimori, T. Ueda, F. Kikuchi, H. Ishii, I. Shiono,
S. Zhang
Mitsubishi Materials, Japan

The purpose of this study is to evaluate the electrochemical migrationof ITO/Ag/ITO structure for Touch Panel Sensor and to prepare thedata necessary to decide the evaluation standard of reliability for
application of ITO/Ag/ITO to electrode materials. Our evaluation resultshows the guideline of the new evaluation standard.
FLX1/
INP4 - 4
19:00

Ultra High Resolution Copper Lithography Not
Requiring Fine Mask Design Rules and Without
Damaging Copper
M. A. Hsu, C.-H. Lin, R.-C. Lian, A. Igawa*
Consistent Elect. Materials, Taiwan*eChem Solutions Japan, Japan

Applying common photolithography process to copper substrate withnovel formulated lithographic chemicals, extremely ﬁne copper pattern
could be obtained without using ﬁne mask patterns and with no copper
damaging. Very precise metal mesh or copper circuit can be formed
onto not only Si or glass substrate but also ﬂexible ﬁlm.
Author Interviews and Demonstrations
19:00 – 19:40, Ohmi 6
Supporting Organizations:
The Forum for Advancement of Stereoscopic Three Dimensional
Image Technology and Arts
Holographic Display Artists and Engineers Club (HODIC),The Optical Society of Japan
Human Interface Society
Technical Group on Information Sensing Technologies, ITE

204

Thursday

December 10

Innovative Demonstration
SessionThursday, December 10
10:30 - 16:00

Ohmi 5 and Shakunage 2

Innovative Demonstration Session
LCT1 - 3

High Resolution Display Solution with LTPS
Technology

I-DEMO

C. P. Xiang, Z. D. Zhang, H. Wu, Y. Z. Ma, B. P. Liu,
B. Z. Liu, L. Wen, X. F. Zhou, B. P. Shen, J. Y. Li,
Z. H. Zeng
XiamenTianma Microelect., China
LCTp6 - 6L

2D-3D Switchable Auto-Stereoscopic Multi-View 3D
Mobile Display Using Polarization Dependent
Reactive Mesogen Lens Array Film
M.-K. Park, K.-B. Son, M. Kim, H.-R. Kim
Kyungpook Nat. Univ., Korea

FMC2 - 4L

Prototyping of LED Color Generator for Imaging
Systems with Wide Gamut
H. Suzuki, H. Urabe*, M. Katoh**, Y. Shimodaira*Nobuo Elect., Japan*Shizuoka Univ., Japan**Papalab, Japan.

FMC5 - 2

Aerial Three-Dimensional Display Based on RetroReﬂective Optical Imaging
D. Miyazaki, Y. Maeda*, S. Onoda, Y. Tokubo,
S. Murakami, R. Tamaki, T. Mukai
Osaka City Univ., Japan*Parity Innovations, Japan

PH1 - 1High Directional LED Lighting for Forming Pattern,
HOLOLIGHT: Its Business Developments andProspects
T. Ikeda
Pi Photonics, Japan205

Thursday
PH1 - 4L

December 10
White LEDs Using Sharp β-sialon:Eu Phosphor andK2SiF6:Mn Phosphor for Wide-Color Gamut Display
Application
K. Yoshimura, H. Fukunaga, M. Izumi, M. Masuda,
T. Uemura, K. Takahashi*, R.-J. Xie*, N. Hirosaki*
Sharp, Japan*NIMS, Japan

3D1 - 1

Occlusion Processing in Computer Holography- With a Focus on Switch-Back Technique K. Matsushima
Kansai Univ., Japan

3D2/
LCT3 - 4

Wide Viewing Angle Autostereoscopic 3D Display
with Eye-Tracking System
Y. Hyodo, S. Oka, T. Koito, H. Sugiyama, Y. Maede,
T. Ochiai, T. Takahashi, S. Komura
Japan Display, Japan

3D4/
VHF6 - 4

Development of Poor Man's 3D-AR Platform for
Amateur Game Creators
Y. Yoneda, E. Dong, T. Fujita, H. Kiriyama, K. Takemura,
K. Iwasaki, R. Urushihara*, T. Ichii
Tokyo Inst. of Tech., Japan*Ochanomizu Univ., Japan

3D5 - 4

Floating Image Display Based on a Dihedral Corner
Reﬂector Array
Y. Maeda
Parity Innovations, Japan

3D6 - 2

Aerial Imaging by Retro-Reﬂection with Transparent
Retro-Reﬂector (AIRR with TRR)
Y. Tokuda*,**, K. Onuki*, M. Takahashi*, S. Onose*,
T. Okamoto*, M. Hirose**, H. Yamamoto*,****Utsunomiya Univ., Japan**Univ. of Tokyo, Japan***CREST, Japan

3D6 - 3

Superimposed 3D Display Viewable from 360
Degrees
H. Kato, T. Yendo
Nagaoka Univ. of Tech., Japan206

Thursday
3D6 - 4

December 10
A Method to Make 360 Degree Contents for Realistic
3D Image Display Using Direct Light Scanning
X. Luo, H. Horimai*, X. Tan
Beijing Inst. of Tech., China*3Dragons, Japan

3Dp1 - 8

Wide Vertical Viewing Zone in Arc DFD (DepthFused 3D) Display
K. Yoshioka, S. Nishiyama, H. Mizushina, S. Suyama
Tokushima Univ., Japan

3Dp1 - 10

B. Yu, H. Kakeya
Univ. of Tsukuba, Japan
VHFp1 - 6

Development and Application of Hyperspectral
Two-Dimension Display
M. Saika, K. Yoshida, T. Satoh, M. Yamada,
K. Uchikawa*
Topcon, Japan*Tokyo Inst. of Tech., Japan

PRJ3 - 3

Optically Efﬁcient Homogenization of Laser
Illumination
F. Shevlin
DYOPTYKA, Ireland

PRJ6 - 3

A Head Mounted Display Using the Original Flexible
Arm and Headband
M. Watanabe, Y. Fukuda, M. Yagi, H. Ishizaki,
M. Nakanishi*, N. Hanafusa**, T. Katano
Brother Inds, Japan*Keio Univ., Japan**Univ. of Tokyo Hospital, Japan

PRJp1 - 8L

Validation of Illuminance Measurement for Laser
Display
S. Kubota, M. Kurashige, K. Ishida, K. Ochi*
Dai Nippon Printing, Japan*Konica Minolta, Japan

207

I-DEMOAn Autostereoscopic Display Combining Parallax
Barrier and Volumetric Images Using Non-Negative
Edge Filter

Thursday
MEET4 - 1

December 10
Blue and Green 10-μm Pixel Pitch GaN LED Arrayswith Very High Brightness
F. Templier, J.-M. Bethoux, B. Aventurier, F. Marion,
S. Tirano, M. Lacroix, M. Marra, V. Verney, L. Dupré,
F. Olivier, F. Berger, W. B. Naceur, A. Sanchot,
I.-C. Robin, M.-A. di Forte-Poisson*, P. Gamarra*,
C. Lacam*, M. Tordjman
CEA-LETI, France*III-V Lab, France

DES2 - 1

A Concept of Immersive Telepresence “Kirari!”
M. Imoto, S. Uchida, E. Ashikaga, M. Wagatsuma,
K. HidakaNTT, Japan

DES2 - 2

Transparent Liquid Crystal Display with Three
States; Transparent State, White State and BlackState
Y. Iyama, T. Sasaki, I. Aoyama, K. Hanaoka, T. Ishihara,
M. Yashiki, K. Takase, H. Miyata, H. Yoshida
Sharp, Japan

INP2 - 1

Improved Signal Processing for Capacitive Touch
Panel with Conductive and Non-conductive Object
Distinction
J. Taylor, C. Brown, A. Kay, D. Gallardo, S. Maguire,
Y. Sugita*, K. Kida*
Sharp Labs. of Europe, UK*Sharp, Japan

INP3 - 1

Development of a TV System Augmented Outside
the TV Screen
H. Kawakita*,**, M. Uehara*, T. Nakagawa*, M. Sato***NHK, Japan**Tokyo Inst. of Tech., Japan

INP3 - 5L

Character Recognition System Using Cellular
Neural Network Suitable for Integration on
Electronic Displays –Development of Simulator and
Evaluation of Operation–
T. Kameda*, M. Kimura*,**, Y. Nakashima**NAIST, Japan**Ryukoku Univ., Japan

208

Quantum Dots Sessions
PHp

10:30 – 12:30 Thursday, Dec. 10
Ohmi 6 (Poster)

MEET1 16:05 – 17:25 Thursday, Dec. 10
PH3
9:00 – 10:00 Friday,
Dec. 11
MEET5 16:50 – 18:20 Friday,
Dec. 11
Ohmi 8 (Oral)
I-DEMOEXHIBITION
12:00 – 17:00 Wednesday, Dec. 9
10:00 – 18:00 Thursday, Dec. 10
10:00 – 14:00 Friday,
Dec. 11
Lobby (2F)
Otsu Prince HotelFree admission with your registration name tag

IDW/AD ’16
The 23rd International Display Workshops
in conjunction with Asia Display 2016
Dec. 7 – 9, 2016
Fukuoka Convention Center
Fukuoka, Japan
http://www.idw.or.jp

209

IDW ’15 COMMITTEESORGANIZING COMMITTEE
General Chair:
General Vice-Chair:Representative (ITE):

H. Okumura
H. Fujikake
T. Sisikui
K. Betsui
Representative (SID):
M. Omodani
K. Kondo
Standing(Executive Chair): K. Ishii
Standing(Program Chair): M. Kimura
Standing:
Y. Iimura
K. Ishikawa
A. Mikami
Y. Shimodaira
T. Tsujimura
Auditor:K. AzumaToshiba
Tohoku Univ.
Meiji Univ.
HitachiTokai Univ.
Sharp
NHK
Ryukoku Univ.
Tokyo Univ. of A&T
Tokyo Inst. of Tech.
Kanazawa Inst. of Tech.
Shizuoka Univ.
KONICA MINOLTA
Shimadzu

OVERSEAS ADVISORS
Overseas Advisor:

B. H. Berkeley
J. ChenN. Fruehauf
A. Ghosh
M.-K. Han
J. Jang
Y.-S. Kim
H.-S. Kwok
J.-N. Perbet
K.-R. Sarma
H.-P. D. Shieh
D. Theis
B. Wang
L. F. Weber

SID, USA
ITRI, Taiwan
Univ. of Stuttgart, Germany
eMagin, USA
Seoul Nat. Univ., Korea
Kyung Hee Univ., Korea
Hongik Univ., Korea
Hong Kong Univ. of S&T, Hong Kong
Thales Avionics, France
Honeywell Int., USA
Nat. Chiao Tung Univ., Taiwan
Tech. Univ. Munich, Germany
Southeast Univ., China
Consult., USA

EXECUTIVE COMMITTEE
Executive Chair:
Executive Vice-Chair:

Program Chair:
Program Vice-Chair:

Program Secretary:

Publication Chair:
Publication Vice-Chair:
Publication:

210

K. Ishii
H. KatoY. Kijima
T. Shiga
K. Takatori
M. Kimura
M. DateH. Kominami
M. Shinohara
O. Akimoto
M. Higuchi
H. Hirata
Y. Hisatake
K. Ishikawa
H. KatoY. Kijima
Y. NakaiY. Oyamada
H. Kumomi
T. Tsuzuki
T. Ishinabe
H. Kawamura

NHK
Sharp
JOLED
Univ. of Electro-Commun.
NLT Techs.
Ryukoku Univ.
NTT
Shizuoka Univ.
Omron
Sony
NIMS
Toray Eng.
Japan Display
Tokyo Inst. of Tech.
Sharp
JOLED
Toshiba
Tottori Univ.
Tokyo Inst. of Tech.
NHK
Tohoku Univ.
NTTLocal Arrangement Chair: K. Takatori
Local Arrangement Vice-Chair: T. Numao
Local Arrangement:
T. Matsuda
Exhibition Chair:
Y. Hisatake
Financial Supporting Chair: Y. Hisatake
Treasurer:
T. Shiga
Vice Treasurer:
Y. NakaiGeneral Secretary:
K. Betsui
Senior Member:
K. Azuma
S. Komura
A. Mikami
Members:
I. Fujieda
D. P. Gosain
Y. Gotoh
N. Hashimoto
M. Inoue
S. Kaneko
T. Katoh
S. Kobayashi
T. Komaki
H. Kuma
S. Maeda
K. Makita
S. Naemura
Y. Sakamoto
H. Sakurai
A. Sasaki
K. Suzuki
M. Suzuki
Y. TokoT. Uchida
H. Uchiike
Y. Yamamoto
Y. Yanagi
H. Yokoyama
M. YukiNLT Techs.
Ryukoku Univ.
Japan Display
Japan Display
Univ. of Electro-Commun.
Toshiba
HitachiShimadzu
Japan Display
Kanazawa Inst. of Tech.
Ritsumeikan Univ.
AKT
Kyoto Univ.
Citizen Holdings
Huawei Techs. JapanZEONTokyo Univ. of Sci. Yamaguchi
Panasonic
Idemitsu Kosan
Tokai Univ.
Canon
Univ. of Southampton
Hokkaido Univ.
IBLC
Kyoto Univ.
Toshiba Res. Consulting
Merck
Stanley Elec.
Sendai Nat. College of Tech.
Saga Univ.
Lumiotec
Kent State Univ.
Asahi Glass

WORKSHOP CHAIRS
LCT
AMD
FMC
PH
FED
OLED
3D
VHF
PRJ
EP
MEET
DES
FLX
INP

T. Ishinabe
H. Kumomi
K. Käläntär
Y. Nakanishi
H. Mimura
K. Monzen
M. Tsuchida
T. Kurita
S. OuchiH. Arisawa
M. Nakamoto
H. Okumura
M. Kimura
N. Hashimoto

Tohoku Univ.
Tokyo Inst. of Tech.
Global Optical Solutions
Shizuoka Univ.
Shizuoka Univ.
Nissan Chem. Inds.
NTT
NHK Media Tech.
HitachiFuji Xerox
Shizuoka Univ.
Toshiba
Nagaoka Univ. of Tech.
Citizen Holdings

PROGRAM COMMITTEE
Program Chair:
Program Vice-Chair:

M. Kimura
M. DateH. Kominami
M. Shinohara

Ryukoku Univ.
NTT
Shizuoka Univ.
Omron
211

Program Secretary:

Committee:
LCT
AMD
FMC
PH
FED
OLED
3D
VHF
PRJ
EP
MEET
DES
FLX
INP

O. Akimoto
M. Higuchi
H. Hirata
Y. Hisatake
K. Ishikawa
H. KatoY. Kijima
Y. NakaiY. Oyamada

Sony
NIMS
Toray Eng.
Japan Display
Tokyo Inst. of Tech.
Sharp
JOLED
Toshiba
Tottori Univ.

S. Ishihara
H. Minemawari
T. Tomono
N. Miura
H. Shimawaki
T. Ikuta
K. Yamamoto
K. Masaoka
K. Ohara
T. Fujisawa
Y. NakaiY. Oyamada
T. Sekitani
T. Nakamura

Osaka Inst. of Tech.
AIST
Toppan Printing
Meiji Univ.
Hachinohe Inst.of Tech.
JNC Petrochem.
NICT
NHK
Texas Instr. Japan
DIC
Toshiba
Tottori Univ.
Osaka Univ.
Japan Display

Workshop on LC Science and Technologies
Workshop Chair:
Program Chair:
Program Vice-Chair:
General Secretary:
Program Committee:

T. Ishinabe
S. Ishihara
S. OkaS. Shibahara
H. Wakemoto
F. Araoka
M. Funahashi
I. Hirosawa
M. Inoue
K. Ishikawa
A. Kubono
K. Miyachi
H. Nakata
M. Nishikawa
T. NoseH. Okada
M. Ozaki
M. Suzuki
T. Takahashi
S. Takanori

Tohoku Univ.
Osaka Inst. of Tech.
Japan Display
Sony
Japan Display
RIKEN
Kagawa Univ.
JASRI
Apple
Tokyo Inst. of Tech.
Shizuoka Univ.
Sharp
DIC
JSR Micro Taiwan
Akita Pref. Univ.
Univ. of Toyama
Osaka Univ.
Merck
Kogakuin Univ.
JNC Petrochem.

Workshop on Active Matrix Displays
Workshop Chair:
Program Chair:
Program Vice-Chair:
General Secretary:
Program Committee:

212

H. Kumomi
H. Minemawari
M. Inoue
K. Suga
A. Arias
K. Azuma
E. Fortunato
Y. Fujisaki
H. Hamada
M. Hiramatsu

Tokyo Inst. of Tech.
AIST
Huawei Techs. Japan
Sharp
Univ. of California, Berkeley
Shimadzu
New Univ. of Lisbon
NHK
Kinki Univ.
Japan Display

S. Horita
H. J. Kim
M. KimuraN. Morosawa
T. Noguchi
T. Ozawa
M. Shibazaki
K. Takatori
Y.-H. Yeh

JAIST
Yonsei Univ.
Ryukoku Univ.
Sony Mobile Communs.
Univ. of the Ryukyus
AU Optronics, Japan
Innolux
NLT Techs.
ITRI

Workshop on FPD Manufacturing, Materials and Components
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

K. Käläntär
T. Tomono
R. Yamaguchi
I. Amimori
T. Arikado
S. Asari
A. Fujita
Y. Inoue
K. Kurokawa
D. Matsuura
T. Miyashita
T. Mori
S. Namekawa
T. Nonaka
Y. Saitoh
T. SatoM. Shinohara
S. Takahashi
T. Takeda
K. TamaiY. UkaiT. Unate
Y. YangGlobal Optical Solutions
Toppan Printing
Akita Univ.
A51 TechTokyo Electron
ULVAC
JNC
Corning Holding Japan
Entegris
Dai Nippon Printing
Tohoku Inst. of Tech.
Nitto Denko
Nippon Steel & Sumikin Chemical
Merck
FUJIFILM
ZEON
Omron
Sumitomo Bakelite
Nagase ChemteX
Asahi Glass
UDDI
UNATE
CSOT

Workshop on EL Displays and Phosphors
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

Y. Nakanishi
N. Miura
N. Matsuda
K. Hara
T. Hisamune
S. Itoh
D. JeonH. Kobayashi
T. Kunimoto
T. Kusunoki
T. Miyata
T. Mukai
K. Ohmi
D. Poelman
M. Shiiki
K. Wani
R. XieShizuoka Univ.
Meiji Univ.
Toshiba Materials
Shizuoka Univ.
Mitsubishi Chem.
FutabaKAIST
Tottori Univ.
Tokushima Bunri Univ.
Dexerials
Kanazawa Inst. of Tech.
Nichia Chem. Inds.
Tottori Univ.
Gent Univ.
Hitachi Chem.
TAZMO
NIMS

213

Workshop on Field Emission Displays, CRTs and Plasma
Displays
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

H. Mimura
H. Shimawaki
M. Nanba
Y. Gotoh
H. Kajiyama
M. Nagao
M. Nakamoto
Y. NeoM. Niigaki
T. Shiga
M. TakaiF. Wakaya

Shizuoka Univ.
Hachinohe Inst.of Tech.
NHKKyoto Univ.
Tokushima Bunri Univ.
AIST
Shizuoka Univ.
Shizuoka Univ.
Hamamatsu Photonics
Univ. of Electro-Commun.
Osaka Univ.
Osaka Univ.

Workshop on OLED Displays and Related Technologies
Workshop Chair:
Program Chair:
Program Vice-Chair:
General Secretary:
Program Committee:

K. Monzen
T. Ikuta
H. Kuma
T. Uchida
C. Adachi
M. Adachi
S. Aratani
S. Enomoto
T. Fukuda
T. Inoue
Y. Kijima
T. Komatsu
A. Mikami
H. Murata
S. Naka
K. Nakayama
Y. SakaiT. Shimizu
S. Tokito
T. Tsuji
T. Wakimoto

Nissan Chem. Inds.
JNC Petrochem.
Idemitsu Kosan
Tokyo Polytechnic Univ.
Kyushu Univ.
Japan Display
HitachiToshiba
Saitama Univ.
TDK Corporation
JOLED
JOLED
Kanazawa Inst. of Tech.
JAIST
Univ. of Toyama
Yamagata Univ.
MCRC
NHK
Yamagata Univ.
Pioneer
Merck

Workshop on 3D/Hyper-Realistic Displays and Systems
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

M. Tsuchida
K. Yamamoto
J. Arai
M. DateT. Fujii
T. Koike
J.-Y. Son
C.-H. Tsai
M. Tsuboi
H. Yamamoto
S. Yano

NTT
NICT
NHK
NTT
Nagoya Univ.
Hosei Univ.
Konyang Univ.
ITRI
NTT DoCoMo
Univ. of Utsunomiya
Shimane Univ.

Workshop on Applied Vision and Human Factors
Workshop Chair:
Program Chair:
Program Vice-Chair:
General Secretary:
Program Committee:

214

T. Kurita
K. Masaoka
T. Nakatsue
A. Yoshida
J. Bergquist
N. Hiruma
Y. Hisatake

NHK Media Tech.
NHK
Sony
Sharp
Nokia Corp.
NHK
Japan Display

M. Idesawa
H. IsonoA. Morishita
Y. Nakamura
G. Ohashi
K. Sakamoto
T. Shibata
Y. Shimodaira
J. Someya
T. Tamura
S. Uehara
R. Yoshitake

Univ. of Electro-Commun.
Tokyo Denki Univ.
Toshiba
Mitsubishi Elec.
Shizuoka Univ.
Panasonic
Tokyo Unv. of Social Welfare
Shizuoka Univ.
Mitsubishi Elec.
Tokyo Polytech. Univ
Toshiba
Shibaura Inst. of TechWorkshop on Projection and Large-Area Displays and Their
Components
Workshop Chair:
Program Chair:
Program Vice-Chair:
General Secretary:
Vice-Secretary:
Program Committee:

S. OuchiK. Ohara
S. Shikama
T. Suzuki
O. Akimoto
M. Takaso
Y. Asakura
T. Fujiwara
T. Fukui
T. Hashizume
T. Hayashi
H. Kanayama
T. Kawazoe
H. Kikuchi
H. NakanoF. OdaH. Sugiura
M. Takayama
N. TateHitachi
Texas Instr. Japan
Setsunan Univ.
JVC KENWOOD
Sony
Telepathy Japan
Nittoh Kogaku
Hitachi
Oxide
SEIKO EPSON
Okamoto Glass
Panasonic
Univ. of Tokyo
NHK
Barco
Ushio
Mitsubishi Elec.
Honda
Kyushu Univ.

Workshop on Electronic Paper
Workshop Chair:
Program Chair:
Program Vice-Chair:
General Secretary:
Program Committee:

H. Arisawa
T. Fujisawa
N. Kobayashi
Y. Toko
K. Hashimoto
M. Higuchi
Y. Hotta
S. Maeda
M. Omodani
N.-S. Roh
A. Suzuki
G. Zhou

Fuji Xerox
DIC
Chiba Univ.
Stanley Elec.
E Ink Japan
NIMS
Ricoh
Tokai Univ.
Tokai Univ.
Samsung Display
Chiba Univ.
South China Normal Univ.

Workshop on MEMS and Emerging Technologies for Future
Displays and Devices
Workshop Chair:
Program Chair:
General Secretary:
Vice-Secretary
Program Committee:

M. Nakamoto
Y. NakaiT. Ichihara
T. Komoda
T. Akinwande
Z. Y. Alpaslan
G. Barbastathis
Y. Bonnassieux

Shizuoka Univ.
Toshiba
Panasonic
Yamagata Univ.
MIT
Ostendo Techs.
MIT
Ecole Polytechnique215

V. Bulovic
MIT
S. Coe-Sullivan QD Vision
M. Esashi
Tohoku Univ.
G. R. Fern
Brunel Univ.
A. J. Flewitt
Univ. of Cambridge
H. Fujita
Univ. of TokyoP. H. Holloway
Univ. of Florida
J. Jang
Kyung Hee Univ.
P. Kathirgamanathan Brunel Univ.
H. Kikuchi
NHK
J. M. Kim
Univ. of Oxford
L. Kymissis
Columbia Univ.
V. W. Lee
LumiodeJ. R. Manders
NanoPhotonica
W. Milne
Univ. of Cambridge
K. C. Park
Kyung Hee Univ.
D. Pribat
Ecole Polytechnique
J. Silver
Brunel Univ.
S. Tanaka
Tohoku Univ.
F. Templier
CEA-LETI
H. Tuller
MIT
S. Uchikoga
Toshiba
J. Van Derlofske 3M
Sichuan COC Display Devices
Q. YanWorkshop on Display Electronic Systems
Workshop Chair:Workshop Vice-Chair:
Program Chair:
Program Vice-Chair:
General Secretary:
Vice-Secretary:
Program Committee:

H. Okumura
T. Yamamoto
Y. Oyamada
K. Makita
T. Mitasaki
S. Takamura
T. Fujine
R. Hattori
K. Käläntär
L. Kerofsky
H.-S. Koo
O.-K. Kwon
T. Maeda
K. Morita
A. Nagase
H. NamH. Nitta
S. OnoA. Sakaigawa
K. Sekiya

ToshibaNHK
Tottori Univ.
Canon
NTT
NTT
Sharp
Kyushu Univ.
Global Optical Solutions
InterDigital Communs.
Minghsin Univ. of S&T
Hanyang Univ.
JOLEDNat. Trafﬁc Safety & Environment Lab.
Mitsubishi Elec.
Kyung Hee Univ.
Japan Display
Apple Japan
Japan Display
Kanagawa Inst. of Tech.

Workshop on Flexible Electronics
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

216

M. KimuraT. Sekitani
H. Maeda
K. Akamatsu
T. Eguchi
H. EndoH. Fujikake
M. Funahashi
T. Furukawa
H. Hirata

Nagaoka Univ. of Tech.
Osaka Univ.
Dai Nippon Printing
JOLED
Sumitomo Bakelite
NEC Corp.
Tohoku Univ.
Kagawa Univ.
Yamagata Univ.
Toray Eng.

M. ItoT. KamataY. Mishima
A. Miyamoto
M. Nakata
A. Nakazawa
T. Shiro
K. Takimiya
T. Tomono
K. UemuraY. Uraoka

Toppan Printing
AIST
FUJIFILM
PanasonicNHK
Asahi Glass
TeijinRIKEN
Toppan Printing
Nippon Steel & Sumitomo Metal
NAISTWorkshop on Touch Panels and Input Technologies
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

N. Hashimoto
T. Nakamura
H. Haga
K. Imoto
M. Inoue
H. KatoH.-S. Koo
I. Mihara
K. Nakatani
H. Noma
J. Ohta
H. Okumura
Y. Sasaki
Y. Sugita
J. Watanabe
K. Yamazaki

Citizen Holdings
Japan Display
NLT Techs.
Toshiba
Huawei Techs. Japan
Sharp
Minghsin Univ. of S&T
ToshibaTouchpanel Labs.
Ritsumeikan Univ.
NAIST
Toshiba
Mitsubishi Elec.
Sharp
NTT
Corning Japan

Special Topics of Interest on Oxide-Semiconductor TFT
Facilitator:
Program Committee:
AMD
FMC
FLX

M. Kimura

Ryukoku Univ.

H. Kumomi
R. Yamaguchi
M. Nakata

Tokyo Inst. of Tech.
Akita Univ.
NHK

Special Topics of Interest on Augmented Reality and Virtual Reality
Facilitator:
Program Committee:
FMC
FMC
3D
PRJ
DES
INP
VHF

Y. Oyamada

Tottori Univ.

K. Käläntär
M. Shinohara
M. Tsuchida
S. OuchiY. Oyamada
N. Hashimoto
A. Yoshida

Global Optical Solutions
Omron
NTT
HitachiTottori Univ.
Citizen Holdings
Sharp

Special Topics of Interest on Lighting Technologies
Facilitator:
Program Committee:
PH
OLED
MEET

Y. Kijima

JOLED

K. HaraH. Kuma
Y. Nakai

Shizuoka Univ.
Idemitsu Kosan
ToshibaSpecial Topics of Interest on Printed Electronics
Facilitator:
Program Committee:
LCT
AMD
FMC

H. Hirata

Toray Eng.

T. Ishinabe
H. Minemawari
T. Tomono

Tohoku Univ.
AIST
Toppan Printing
217

OLED
FLX

T. Ikuta
H. HirataJNC Petrochem.
Toray Eng.

FINANCIAL SUPPORTING ORGANIZATIONS (as of November 10, 2015)
Applied Materials, Inc.
ASAHI GLASS Co., Ltd.
JSR Corporation
Nichia Corporation
Semiconductor Energy Laboratory Co., Ltd.
SHARP CORPORATIONTOKYO ELECTRON LIMITEDSUPPORTING MEMBERS (as of November 10, 2015)
EIZO Corporation
JAPAN BROADCASTING CORPORATIONJNC Corporation
Merck Ltd. JapanNLT Technologies, Ltd.
Toshiba Corporation
ULVAC, Inc.

EXHIBITORS: COMPANIES (as of November 10, 2015)
Hamamatsu Agency for Innovation/Nobuo Electronics Inc.
KONICA MINOLTA, INC.
NAGASE & CO., LTD.
Nippon Electric Glass Co., Ltd.
OXIDE Corporation
SHINTECH, Inc.
Silvaco Japan Co., Ltd.
Toray Research Center, Inc.
Tosoh Corporation
TOYO Corporation
VITEC GLOBAL ELECTRONICS CO., LTD.
YUASA SYSTEM Co., Ltd.

EXHIBITORS: UNIVERSITIES (as of November 10, 2015)
Fujieda Lab., Ritsumeikan Univ.
Hattori Lab., KASTEC·IGSES, Kyushu Univ.
Nakamoto Lab., Shizuoka Univ.
Maeda Lab., Tokai Univ.
Mutsu Matsu Lab./Ryukoku Extension Center, Ryukoku Univ.
Noguchi Lab., Univ. of the Ryukyus
Suyama Lab., Tokushima Univ.
Yamamoto Lab., Utsunomiya Univ.

Evening Get-Together
with Wine
Tuesday, Dec. 8, 2015
18:00 – 20:00
Hiei (2F)
Otsu Prince Hotel(Sponsored by Merck Ltd., Japan)
See page 12 for details
218

Special Address
Lighting the Earth by LEDs
Hiroshi Amano
2014 Nobel Laureate
Nagoya Univ., Japan
17:20 – 18:20 Wednesday, Dec. 9
Ohmi 1 (2F)

RECEPTION
Wednesday, Dec. 9, 2015
18:50 – 20:50
Prince Hall (3F)
Otsu Prince HotelSee page 12 for details“Innovative Demonstration Session”
by Oral and Poster Presenters
Live demonstrations of emerging information
display technologies
Thursday, Dec. 10, 2015
10:30 – 16：00
Ohmi 5 (2F)
Shakunage 2 (1F)
See page 205-209 for details

219

FLOOR MAP

1FSecretariat
Innovative Eizansumire 1
Demonstrations
Shakunage 2

Registration

Lakeside

Conference
Hall
Entrance

Convenience
Shop

Bus Stop
Hotel
Entrance

2F

Opening / Keynote / lnvited / Special Addresses
Posters / Author Interviews and Demonstrations

Ohmi
1

Ohmi Ohmi Ohmi Ohmi Ohmi Ohmi Ohmi Ohmi
2
3
5
6
7
8
9
10
1
2
3
Exhibition
Innovative
Demonstrations
Lakeside
LAkeside

Hiei
Evening Get–Together with Wine

Seta

Speaker Preparation Room

220

3F

Prince Hall

Reception

221

IDW Best Paper AwardIDW Outstanding
Poster Paper Award
These awards will go to the most outstanding papers
selected from those presented at IDW ’15.
The 2015 award winners will be announced on the
IDW website: http://www.idw.or.jp/award.html

SID Display Week 2016
May 22 – 27, 2016
Moscone Convention Center
San Francisco, CA, USA

IDW/AD ’16
The 23rd International Display Workshops
in conjunction with Asia Display 2016
Dec. 7 – 9, 2016
Fukuoka Convention Center
Fukuoka, Japan
http://www.idw.or.jp

222

MEMO

223

MEMO

224

IDW ’15 Workshop Timetable
1F

Fri, Dec. 11

2F

Lobby

Ohmi 1

Ohmi 2

Ohmi 3

Ohmi 5

Ohmi 6

Ohmi 7

Ohmi 8

Ohmi 9Ohmi 10

Hiei

PM

Lobby

LCT2
15:10 - 16:10

DES2
15:30 - 16:55

EP2
15:10 - 16:35

INP3
9:00 - 10:45

3D1
9:00 - 10:20

PRJ1†
9:00 - 10:54

VHF3
9:00 - 10:35

Exhibition
12:00 - 17:00

Author Interviews &Demonstrations
16:30 - 17:10
Special Address
17:20 - 18:20

Ohmi 6

DESp2: Poster
13:40 - 15:40

Wednesday, December 9

VHF2
15:10 - 16:25

OLED3
9:00 - 10:15

PH1
9:00 - 10:25

EP3†
9:00 - 10:36

Break
FMC1
16:00 - 17:15

VHF4
16:00 - 17:25

FLX1/INP4
17:40 - 19:20

3D3
17:40 - 19:00

DES4
18:05 - 19:10

VHF5
17:40 - 18:50

PH3
9:00 - 10:00

3D4/VHF6
9:00 - 10:20

PRJ2
9:00 - 10:20

MEET2
10:40 - 12:00

3D5
10:40 - 12:00

PRJ3
10:40 - 12:25

MEET3
13:30 - 14:50

3D6
13:30 - 14:50

PRJ4
13:30 - 14:50

MEET4
15:10 - 16:30

FMC5
15:10 - 16:10

PRJ5
15:10 - 16:35

Break
AMD2
17:40 - 19:10

LCT4
17:40 - 18:40

FMC2
17:40 - 18:55
Author Interviews & Demonstrations
19:00 - 19:40

OLED4
9:00 - 10:00

FLX2/LCT5
9:00 - 10:30

FMC3
9:00 - 10:00

PH1: Phosphors forLighting Application
9:00 - 10:25

AMD3
9:00 - 10:30

Break
Registration
8:00 - 13:00

AMD4
10:40 - 11:55

OLED5/FLX3
10:40 - 12:00

FED1
10:40 - 12:25

FMC4
10:40 - 11:40

Friday, December 11

Exhibition
10:00 - 14:00

PHp2: Poster
10:30 - 12:30

Author Interviews & Demonstrations
12:00 - 12:40
Lunch
FED2
13:30 - 15:10

LCT6
13:30 - 15:00

AMD6
15:10 - 16:35

FLX5
15:10 - 16:45

FED3
15:20 - 16:40

LCT7
15:10 - 16:30

Break

OLED4: Advanced
OLED Technologies II
9:00 - 10:00

FLX4
13:30 - 14:40

FLX4: Flexible
Printed Electronics
13:30 - 14:40

AMD5
13:30 - 15:00

Break
MEET5
16:50 - 18:20
Author Interviews & Demonstrations
18:10 - 18:50†

Including Short Presentations

PRJ6
16:50 - 18:20

FLXp3: Poster
13:40 - 15:40

AMD7
16:50 - 18:25

Printed Electronics
Ohmi 2
Ohmi 6DES3
16:00 - 17:15

Ohmi 6

3D2/LCT3
16:00 - 17:25

Lighting Technologies
Ohmi 2

MEET1
16:00 - 17:25

Ohmi 1

PH2
16:00 - 17:10

Ohmi 10Break
AMD1
16:00 - 17:25

Exhibition
10:00 - 18:00

OLED2: OLED for
Lighting Application
15:10 - 16:45

Poster
LCTp4-6,AMDp,VHFp,PRJp,
EPp,MEETp,DESp,FLXp,INPp
13:40 - 15:40

DES1: Various Visualization
Technologies
13:30 - 15:10

Further Innovative
Demonstration
Session held in
Shakunage 2

Registration
8:00 - 18:00

Poster
LCTp1-3,FMCp,PHp,OLEDp,3Dp
10:30 - 12:30

PRJ6: Wearable
Applications
16:50 - 18:20

Thursday, December 10

Innovative
Demonstration
Session10:30 - 16:00

FMC5: Augmented
Reality & Virtual Reality
15:10 - 16:10

Break

Lunch

Augmented Reality and Virtual Reality
Ohmi 8
Ohmi 9INP3: AR &Interactive Systems
9:00 - 10:45

Reception at the Prince Hall (3F)
18:50 - 20:50

IDW ’15 Special Topics of Interest Navigator

INP2
15:10 - 16:40

Break
OLED2
15:10 - 16:45

Oxide-Semiconductor TFT
Ohmi 1
Ohmi 6EP1
13:30 - 14:40

PM

AMDp1,FLXp2: Poster
13:40 - 15:40

DES1
13:30 - 15:10

Wed., Dec. 9
AM

AMD1: Oxide TFT:
Crystalline Oxide
16:00 - 17:25

LCT1
13:30 - 14:55

PM
AMD2: High Resolution Displays
Using LTPS & Oxide TFTs
17:40 - 19:10

Registration
8:00 - 18:00

INP1
13:30 - 14:55

3D4/VHF6: Autostereoscopic& Head-Mounted Displays
9:00 - 10:20

VHF1
13:30 - 14:55

AMD3: Oxide TFT:
Reliability
9:00 - 10:30

Lunch
OLED1
13:30 - 14:45

3D5: 3D/Hyper-Realistic
Display Systems
10:40 - 12:00

Opening, Keynote & Invited Addresses
9:30 - 11:50

AMD4: TFT Fabrication
Technologies
10:40 - 11:55

Registration
17:00 - 20:00

Thu., Dec. 10
AM

AMD5: Oxide TFT:
Applications
13:30 - 15:00

Evening GetTogether
18:00 - 20:00

AMD6: Oxide TFT:
Solution Processes
15:10 - 16:35

Tue.,
Dec. 8Date

IDW ’15 Session Navigator
Wednesday, December 9PM

Thursday, December 10
16:30-17:10

AM

19:00-19:40

AM

12:00-12:40

Ohmi 9Ohmi 6

Ohmi 9Ohmi 6

Ohmi 9Ohmi 6

Autostereoscopic Wavefront/Light
Field Recording &3D Displays*
Rendering

A.I.

Autostereoscopic
3D/Hyper-Realistic& Head-Mounted
Display Systems
Displays*

A.I.

Floating &Omnidirectional
Display Systems

A.I.

Ohmi 6

Ohmi 1

Ohmi 6

Ohmi 1

Ohmi 6

Ohmi 1

PosterHigh Resolution
Oxide TFT:
Crystalline Oxide Displays Using LTPS
& Oxide TFTs

A.I.

TFT Fabrication
Technologies

A.I.

Oxide TFT:
Solution
Processes

Ohmi 6

Ohmi 6

Ohmi 10

Ohmi 6

A.I.

Posters

Ohmi 8

Ohmi 3

Ohmi 6

Ohmi 3

Ohmi 6

Phosphor
Application

Advanced
Technologies &FE MechanismA.I.

FEA Fabrication Flexible Light Source
Process & Novel
Using Plasma
Materials
Technologies

A.I.

Ohmi 8

Ohmi 6

Ohmi 8

Ohmi 6Novel Materials &Components

A.I.

Emerging
Nanotechnologies
Quantum Dots &for Display
Nanotechnologies
Applications

A.I.

Ohmi 3

Ohmi 2

Ohmi 6

Flexible LCDs*

Flexible OLED &OTFT*Ohmi 93D / Hyper-Realistic
Displays

Holography

Ohmi 6
Posters

Active-Matrix Displays

Ohmi 10
Display Electronic Systems

Various
Visualization
Technologies

Transparent
Display Systems

Ohmi 2
Phosphors forLighting
Application

Emissive Technologies

Ohmi 6
Posters
Ohmi 6Emerging Technologies& Novel Applications

Posters
Hiei

e-Paper

Emerging
Technologies for
e-Paper

Electrochromic
DisplaysOhmi 8Interactive
Technologies

Touch Panel

Ohmi 7
Human Factor

Display Metrology

Display Image
Quality

Ohmi 9Liquid-Crystal Technologies

Fascinating High
Resolution Panel
Technologies

Advanced LC
Materials

Application for
Automobiles

Image Processing

A.I.

Ohmi 2

Ohmi 3

Ohmi 6

Phosphor for
General

Display Optics &Information
Technologies

Ohmi 8

A.I.

Quantum Dots
Applications

A.I.

Ohmi 3

Ohmi 6

Ohmi 6

A.I.

Electrophoretic
Displays &Applications

Posters

A.I.

Ohmi 6

Ohmi 8Posters

Flexible Input
Devices*Ohmi 6
A.I.

Ohmi 6

Ohmi 8

Ohmi 6

Ohmi 8

Ohmi 6

A.I.

AR & Interactive
Systems

Posters

Flexible Input
Devices*A.I.

Ohmi 6

Hiei

Ohmi 6

A.I.

Human Factors

Posters

Ohmi 6

Ohmi 6

A.I.

Manufacturing, Process& Equipment

Hiei

A.I.

Color Rendering

A.I.

Ohmi 9Ohmi 2

Ohmi 6

OLED Materials
Ohmi 10

Projection & Large Area
Displays
A.I. Author Interviews & Demonstrations* Joint Session

Projection
Applications

A.I.

A.I.

A.I.

Ohmi 6

Ohmi 5

Ohmi 6

Posters

Manufacturing
Technologies

A.I.

Ohmi 3
Materials &Components

Display Optics &Information
Technologies

A.I.

Ohmi 3

Ohmi 6

Ohmi 5

A.I.

Film Technologies

Ohmi 6

Ohmi 9Ohmi 6

A.I.

Augmented
Reality and Virtual
Reality

A.I.

Ohmi 6

Ohmi 8

Ohmi 6

A.I.

Phosphor
Application

A.I.

MEMS

A.I.

Ohmi 6

Flexible Displays& Devices

Flexible LCDs*

Posters

Ohmi 2

Ohmi 1

Ohmi 2
Flexible Printed
Electronics

A.I.

Ohmi 6

Autostereoscopic
New Fast
Response LCDs
3D Displays

Phosphor for
GeneralOhmi 6

Advanced Si
Technologies

Ohmi 5

Posters

Ohmi 1

Ohmi 6

IPS/FFS Display Innovative Technology
for Surface/Interface
Modes
Control

Materials & Components

Advanced OLED OLED for Lighting
Technologies I
Application

Oxide TFT:
Applications

18:10-18:50

Ohmi 6

Color & Vision

Ohmi 6

Organic Light-Emitting
Displays & Organic Devices

PM

Ohmi 6

Posters

Ohmi 6

Oxide TFT:
Reliability

Ohmi 6

Ohmi 6

Flexible Electronics

Interactive Technologies

Friday, December 11

PM

Ohmi 6
Posters
Ohmi 6
Posters

Ohmi 6

Ohmi 2

Ohmi 6

A.I.

Advanced OLED Flexible OLED &Technologies II
OTFT*

A.I.

Ohmi 10

Ohmi 6

Ohmi 6
A.I.

Projection
Components &Materials

Solid State Light
SourceA.I.

Ohmi 8

Ohmi 6MEMS & Related
Technologies

A.I.

Ohmi 10
Automotive
Display & Lighting Projection Optics

Ohmi 6
Wearable
Applications

A.I.

http://www.idw.or.jp/

IDW ’15
FINAL PROGRAM

IDW ’15 Secretariat:
c/o Bilingual Group Ltd.
3-3-6 Kudan Minami, Chiyoda-ku,
Tokyo 102-0074, Japan
Phone：+81-3-3263-1345
FAX：+81-3-3263-1264
E-mail：idw@idw.or.jp