IDW ’08
THE 15TH INTERNATIONALDISPLAY WORKSHOPS

Workshops on• LC Science and Technologies• Active Matrix Displays• FPD Manufacturing, Materials andComponents• Plasma Displays• EL Displays and Phosphors• Field Emission Display and CRT• Organic LED Displays• 3D/Hyper-Realistic Displays and Systems• Applied Vision and Human Factors• Projection and Large-Area Displays,
and Their Components• Electronic Paper• MEMS for Future Displays
and Related Electron Devices• Display Electronic Systems

Topical Sessions on• Display Technologies for Professional Use• Flexible Displays•

Final Program
Toki Messe Niigata Convention Center
Niigata, Japan
December 3(Wed) – 5(Fri), 2008

CONTENTS
Program Highlights............................................................................... 5
General Information.............................................................................. 9
Hotel and Travel Information............................................................... 12
Plenary Sessions
Wednesday, December 3
IDW ’08 Opening ............................................................................... 16
IDW ’08 Keynote Addresses.............................................................. 16
IDW ’08 Invited Address .................................................................... 17
Workshop on LC Science and Technologies
Wednesday, December 3
Opening............................................................................................... 18
LCT1 Fascinating LC Materials ....................................................... 18
LCT2 Characterization of LC Alignment.......................................... 19
LCT3 Image Sticking Measurement ................................................ 21
Thursday, December 4
LCTp1 Poster : High Performance LCDs.......................................... 22
LCTp2 Poster : Novel LCD Modes ................................................... 26
LCTp3 Poster : Novel Applications................................................... 29
LCTp4 Poster : Display Evaluation ................................................... 30
LCTp5 Poster : Characterization of LC Alignment ........................... 34
LCT4 LC Alignment Patterning........................................................ 38
LCT5 Moving Picture Analysis ........................................................ 39
Friday, December 5
LCT6 15th Anniversary: Progress of LC Materials .......................... 40
LCT7 15th Anniversary: State-of-the-Art LCD Modes..................... 41
LCT8 Novel LCD Modes.................................................................. 42
LCT9 High Performance LCDs (1) .................................................. 43
LCT10 High Performance LCDs (2) .................................................. 44
Workshop on Active Matrix Displays
Wednesday, December 3
AMD1 Organic TFT .......................................................................... 46
AMD2 LCD Applications ................................................................... 47
Thursday, December 4
AMD3/OLED4 AM-OLED ................................................................. 48
AMDp1 Poster : Organic TFT ........................................................... 50
AMDp2 Poster : LCD Applications.................................................... 50
AMDp3 Poster : AM-OLED............................................................... 52
AMDp4 Poster : Poly-Si TFT ............................................................ 53
AMDp5 Poster : Oxide TFT .............................................................. 55
AMDp6 Poster : Amorphous Si TFT................................................. 56
AMDp7 Poster : Late News .............................................................. 58
MEMS4/AMD4 MEMS Displays and Imaging .................................. 61
Friday, December 5
AMD5 Poly-Si TFT............................................................................ 62
AMD6 System On Glass................................................................... 64
1

AMD7 Amorphous Oxide TFT .......................................................... 65
AMD8 Crystalline Oxide TFT............................................................ 66
Workshop on FPD Manufacturing, Materials and Components
Wednesday, December 3
FMC1 Manufacturing I...................................................................... 68
FMC2 Manufacturing II..................................................................... 69
FMC3 Manufacturing III.................................................................... 70
Thursday, December 4
FMC4 Optical Films.......................................................................... 71
FMC5 Backlight ................................................................................ 72
Friday, December 5
FMCp Poster : FPD Manufacturing, Materials & Components ......... 74
FMC6 Materials I .............................................................................. 85
FMC7 Materials II ............................................................................. 87
FMC8 Materials III ............................................................................ 88
Workshop on Plasma Displays
Thursday, December 4
PDP1 Cell Technology ..................................................................... 90
PDP2 Driving & Discharge............................................................... 91
Friday, December 5
PDPp Poster : Plasma Displays ....................................................... 93
PDP3 Protective Layer (1) ............................................................. 101
PDP4 Protective Layer (2) ............................................................. 102
PDP5 Fabrication........................................................................... 103
Workshop on EL Displays and Phosphors
Thursday, December 4
PHp
Poster : Phosphors .............................................................. 105
PH1
Phosphors for LEDs ............................................................ 114
PH2
Phosphors for PDPs ............................................................ 115
PH3
Phosphors in EL and General ............................................. 117
Friday, December 5
FED2/PH4 Phosphors for FEDs..................................................... 118
Workshop on Field Emission Display and CRT
Friday, December 5
Opening............................................................................................ 120
FED1 FEDs.................................................................................... 120
FED2/PH4 Phosphors for FEDs..................................................... 121
FED3 CNT Emitters for FEDs ........................................................ 123
FED4 FE Materials and Characteristics......................................... 124
Workshop on Organic LED Displays
Wednesday, December 3
OLED1 OLED Materials ................................................................. 127
OLED2 OLED Device Technologies (1) ......................................... 128
OLED3 OLED Device Technologies (2) ......................................... 129
2

Thursday, December 4
AMD3/OLED4 AM-OLED ............................................................... 131
OLEDp Poster : OLED Poster ........................................................ 132
Workshop on 3D/Hyper-Realistic Displays and Systems
Thursday, December 4
3Dp
Poster : Hyper Realistic and 3D Display .............................. 142
Opening............................................................................................ 146
3D1
Visual Perception and Human Factor .................................. 146
3D2
Measurement and Standardization...................................... 148
Friday, December 5
3D3
Hyper Realistic and 3D Display Systems (1) ....................... 153
3D4Hyper Realistic and 3D Display Systems (2) ....................... 154
Workshop on Applied Vision and Human Factors
Thursday, December 4
VHFp Poster : Applied Vision and Human Factors......................... 156
VHF1/DES5 Contrast Enhancement .............................................. 161
Friday, December 5
VHF2 Image Quality (1) ................................................................. 162
VHF3 Image Quality (2) ................................................................. 163
VHF4 Color .................................................................................... 164
VHF5 Vision and Human Factors .................................................. 165
VHF6 Moving Image Quality.......................................................... 167
Workshop on Projection and Large-Area Displays,
and Their Components
Wednesday, December 3
Opening............................................................................................ 168
LAD1 Solid State Light Sources .................................................... 168
LAD2 LCOS Light Valves .............................................................. 169
LAD3 Illumination and Projection Optics ....................................... 171
Thursday, December 4
MEMS1/LAD4 Novel MEMS Projection Optical Technologies........ 172
LADp Poster : Projection ................................................................ 173
Workshop on Electronic Paper
Wednesday, December 3
EP1
Electrophoretic Displays ...................................................... 174
EP2Electrowetting Displays and Others..................................... 175
EP3
Various EP Technologies..................................................... 176
Thursday, December 4
EPp
Poster : Electronic Paper Technologies ............................... 177
Workshop on MEMS for Future Displays andRelated Electron Devices
Thursday, December 4
Opening............................................................................................ 180
MEMS1/LAD4 Novel MEMS Projection Optical Technologies........ 180
MEMS2 Emerging MEMS Technologies ........................................ 181
3

MEMS3 Fundamental Process Technologies................................. 183
MEMS4/AMD4 MEMS Displays and Imaging ................................ 184
MEMS5 Optical MEMS and Device Technologies.......................... 186
Workshop on Display Electronic Systems
Wednesday, December 3
DESp Poster : Display Electronic Systems .................................... 188
Opening............................................................................................ 193
DES1 Novel Electronic Display and Driving................................... 193
Thursday, December 4
DES2 High Dynamic Range Display Technologies ........................ 194
DES3 High Image Quality Display Technologies ........................... 195
DES4 Color Fidelity Systems......................................................... 197
VHF1/DES5 Contrast Enhancement .............................................. 198
Topical Session on Display Technologies for Professional Use
Thursday, December 4
Opening............................................................................................ 200
DPU1 Display Technologies for Professional Use.......................... 200
Topical Session on Flexible Displays
Thursday, December 4
FLX1 Flexible OLED Technologies................................................ 202
FLX2 Flexible Electronic Papers ................................................... 203
FLX3 Materials and Components for Flexible Displays................. 204
FLX4 Flexible LCD Technology ..................................................... 205
FLX5 Flexible Active-Matrix Displays ............................................ 206
IDW ’08 Committees ........................................................................ 208
Floor Map ......................................................................................... 215
IDW ’08 Timetable
IDW ’08 Session Navigator

4

PROGRAM HIGHLIGHTS
Scientific and technological advances in research and development on
information displays will be found at the 15th International Display
Workshops (IDW ’08). A feature of the IDW ’08 is an integration of thefollowing thirteen workshops. In addition, two topical sessions will focus
on the recent progress of flexible displays and professional use of information displays.
Workshops on• LC Science and Technologies• Active Matrix Displays• FPD Manufacturing, Materials and Components• Plasma Displays• EL Displays and Phosphors• Field Emission Display and CRT• Organic LED Displays• 3D/Hyper-Realistic Displays and Systems• Applied Vision and Human Factors• Projection and Large-Area Displays, and Their Components• Electronic Paper• MEMS for Future Displays and Related Electron Devices• Display Electronic Systems
Topical Sessions on• Display Technologies for Professional Use• Flexible Displays
The three-day conference will feature 577 papers, including 2 keynote
addresses, 1 invited address, 84 invited papers, 190 oral and 300 poster
presentations will be arranged. Following keynote and invited addresses
in the Wednesday morning, presentations will begin and continue inseven parallel sessions through Friday. Poster sessions and author interviews will enable participants to discuss presented issues in detail. IDW’08 will present “IDW Best Paper” awards and “IDW Outstanding Poster
Paper” awards based on their originalities and technical significance toinformation displays. Exhibitions from display and related industries will
also be featured from Wednesday to Friday in parallel with workshops.
The IDW ’08 should be of interest not only to researchers and engineers,
but also to those who manage companies and institutions in the display
community.

Workshop on LC Science and Technologies (LCT)
Recent advances in LC materials and device technologies are presented. The sessions cover from fundamental studies to recent development in LCD technologies. New LC materials & modes, LC alignment
processes, display measurement, fast-response LCDs and high performance LCDs are discussed. Special two sessions on advanced LC
materials and LCDs are also included as 15th IDW anniversary.

Workshop on Active Matrix Displays (AMD)
Full of opportunities to stimulate your intellectual curiosity with interesting invited talks and contributed papers, this workshop covers various
applications such as LCD and OLED for TV, and novel applications, etc.
It also features TFT technologies including organic TFT, poly-Si TFT,
crystallization, SOG, µc-Si TFT, and oxide-semiconductor TFT, etc.
Come and join us in a discussion of the latest progress in active matrix
displays and TFT technologies.

5Workshop on FPD Manufacturing, Materials and Components(FMC)
This workshop deals with the recent developments and achievements in
FPDs. The cutting-edge technologies of the optical films and color filters, LCD backlighting systems, optical components, manufacturing
technologies, and measurement systems are highlighted.

Workshop on Plasma Displays (PDP)The PDP Workshop introduces over 50 excellent papers. It should be
noted that 1/3 of these papers are related to a protecting layer and exoelectron emission from the layer. Although the retail prices of PDP-TVs
and LCD-TVs are similar, the number of components used in the PDP
modules is an order of magnitude smaller than that used in the LCD
modules, suggesting a possibility of a lot cheaper PDP-TVs in future.
We have several papers introducing new fabrication technologies. Oneof the papers randomly selected as a possible topic of this year is a 1m
x 3m curved plasma tube array (PTA). During the “Green” G8 Summit oflast July held in Japan, the PTA was picked up as an official display
device due to its low power consumption. The second random selection
is a full-color PDP which is transparent when not in use. Although thetechnology is still premature, it may bring a bright future of PDPs.

Workshop on EL Displays and Phosphors (PH)This workshop covers the latest R&D achievements in inorganic ELDs,
phosphors for emissive displays and solid-state illumination as well as
LEDs. The workshop consists of invited talks, contributed papers andposter papers. These will present phosphors for LEDs, PDPs, ELDs,
FEDs, CCFLs and computational approaches for phosphors includinginteresting topics such as luminescent mechanism and synthesis techniques for phosphors.

Workshop on Field Emission Display and CRT (FED)
This workshop covers the entire field of CRT and field emission display
technologies. Recent progress in various field emission displays
equipped with carbon nanotube (CNT) field emitter arrays are presented. Field emission characteristics of high-efficiency electron
devices (HEED) equipped with active-matrix driving circuits, and various field emitter materials, such as CNTs, ZnO, transition metal nitride
and nanocrystalline silicon, are also discussed.

Workshop on Organic LED Displays (OLED)This workshop includes recent developments in OLED materials,
devices, display systems and evaluation methods. OLED technologies
based on new full-color patterning methods are reported on, technologies facilitating the use of OLED in mobile and TV applications. Device
architecture for highly efficient emissions and novel materials supporting these device technologies are also presented.

Workshop on 3D/Hyper-Realistic Displays and Systems (3D)This workshop focuses on recent progress in 3D, hyper-realistic image
system and related visual sciences. It also covers 3D acquisition, measurement, standardization, holography, high-fidelity color reproduction.
Invited talks in this workshop include topics from the forefront of 3D
imaging technologies, and recent research into advanced display systems.

Workshop on Applied Vision and Human Factors (VHF)
This workshop provides a forum for discussing the latest industrial andacademic R&D in the field of applied vision and human factors associated with display technology. These include methods for improved color
reproduction, contrast enhancement and the assessment and improve6

ment of the perceived quality of images. The workshop constitutes aunique opportunity to interact with world-renowned experts in the fieldand discuss the latest advances with them.

Workshop on Projection and Large-Area Displays, and Their
Components (LAD)
The hottest technologies for projection displays worldwide will make thisworkshop exciting. Emerging technologies such as embedded andsmall projectors with LED and lasers will be highlighted. Ongoingprogress in the fields of 3D digital cinema, light sources, light valves,
screens and optical systems will be discussed as well.

Workshop on Electronic Paper (EP)This workshop focuses on current topics in electronic paper including
rewritable paper, paper-like displays, and flexible displays. Various
novel technologies in electrophoretic, liquid crystal, and toner display
systems will be reported on. Systems, devices, materials, human factors, and applications in this field are expected to be discussed.

Workshop on MEMS for Future Displays and Related Electron
Devices (MEMS)
The workshop is unique in covering all aspects of MEMS and nanotechnologies for future displays, imaging devices, and related electron
devices. It seeks to broaden the horizons of display technologies into
MEMS technologies. Among all the MEMS and display conferences in
the world, this is the only opportunity for MEMS researchers to gather
and discuss such devices. Research areas such as materials, basic
physics and fabrication process are included. Authorities in this field areinvited from top research institutions around the world. Invited speakers
are from Ecole Polytech., Fraunhofer IPMS, Miradia, Panasonic Elec.
Works, Pixtronix, Tohoku Univ., Univ. of Tokyo, and Waseda Univ.
Together with excellent contributed papers, this workshop invites participants who wish to open a new field of displays and imaging devices.

Workshop on Display Electronic Systems (DES)This workshop covers all aspects of display systems in relation to electronics of video data processing, interface technologies, cooperative
operations between display components such as cells and backlights, in
combinations with other input/output devices, applications to the new
arena. In addition, the systems for a wide and high dynamic range ofcolor reproduction, and high-fidelity systems for professional use, andexploration of future standards such as post-HDTV are specially
focused.

Topical Session on Display Technologies for Professional Use(DPU)
As the FPDs are rapidly replacing the CRTs, some inconsistency/discontinuity with the existing technologies become apparent as the intrinsic problems on FPDs especially in the professional usages that require
high fidelity of color reproduction and image representation. At thesame time the FPDs are proliferating to new fields that also require similar characteristics. Though those movements have arisen independently, we must have answers to all. In this session, we will see what
are happening in the fields of broadcasts and medical areas and havean opportunity to think what we should do for the future.

Topical Session on Flexible Displays (FLX)
Recently, there is increased attention on the flexible display technologies. The technologies are spread in a wide range of fields from material science to a practical panel. Selected papers from workshops, suchas EP, AMD, FMC, LCT and OLED, are gathered in one room to wel7

come dedicated researchers in this field. These hottest sessions will
cover all aspects of flexible display technologies including electronic
paper, organic TFT, plastic substrate, encapsulation process, analysisof the device performance, flexible LC panel.

IDW Best Paper Award and IDW Outstanding Poster Paper
Award
IDW will present “IDW Best Paper” and “IDW Outstanding Poster Paper”
awards. The awards committee of IDW will select the most outstanding
papers from those presented at IDW ’08. The award winners will beannounced on the IDW website and given a plaque after the conference.

Exhibition
The IDW ’08 Exhibition, which will be held from December 3 throughDecember 5, covers materials, components, manufacturing and measuring equipment, software systems and other related products for display devices. Please join-in and enjoy discussions at exhibitors’ booths.
December 3: 12:00 – 18:00
December 4: 10:00 – 18:00
December 5: 10:00 – 14:00

EVENING GET-TOGETHERWITH WINE
Tuesday, December 2, 2008
18:00–20:00
Room “Houou” (30F)
Hotel Nikko Niigata(Sponsored by Merck Ltd., Japan)
See page 9 for details

IDW ’09
The 16th International Display Workshops
December 9-11, 2009
World Convention Center Summit
Phoenix Seagaia Resort
Miyazaki, Japan
http://www.idw.ne.jp/
8GENERAL INFORMATIONSPONSORSHIP
IDW ’08 is sponsored by the Institute of Image Information and Television Engineers (ITE) and the Society for Information Display (SID).

CONFERENCE SITE
Toki Messe Niigata Convention Center
6-1, Bandaijima, Niigata, Niigata 950-0078, Japan

ON-SITE SECRETARIAT
Telephone and fax machines for IDW ’08 use will be temporarily set up
in the secretariat room (203) at Toki Messe Niigata Convention Center(December 2-5).
Phone: +81-25-246-8530
Fax: +81-25-246-8540

BANQUETA buffet-style banquet will be held on December 3 from 19:30 to 21:30
in the Continental Room (4F) of Hotel Okura Niigata. As the number oftickets is limited, you are urged to make an advance reservation
through the website or by completing the enclosed registration form.
A free chartered-bus from the Conference site to the Banquet site will
be offered by the Organizing Committee.

EVENING GET-TOGETHER WITH WINE
A get-together will be held on December 2 from 18:00 to 20:00 in the
Houou Room (30F) of Hotel Nikko Niigata. Wine (sponsored by Merck
Ltd., Japan) will be served to participants with a relaxed atmosphere for
informal discussion.

REGISTRATION
Registration is available in advance and also on-site. However, on-site
registrants may not be able to obtain a copy of the proceedings, if there
is an unexpectedly large number of on-site registrations. Advance registration is strongly recommended.

Registration Fees
The registration fee for IDW ’08 includes admission to the conference, a
copy of the proceedings (in book format or on a USB flash drive), and
CD-ROM. The proceedings on USB flash drive can be selected only by
those who have registered and paid by November 7 (Japan Standard
Time).
Paid by Nov. 7
After Nov. 7
Member of ITE/SID/ASO*¥ 30,000¥ 40,000
Non-Member**¥ 40,000¥ 50,000
Student***¥ 8,000¥ 10,000
Life Member of ITE/SID¥ 8,000¥ 10,000Banquet¥ 8,000¥ 10,000*ASO: Academic Supporting Organizations(See p. 11 as well as “Supporting Organizations and Sponsors” at theend of each workshop section.)** Non-Member: If you intend to join either ITE or SID, the membershipfee will be subsidized by IDW ’08 committee.
See http://www.idw.ne.jp/ for more information.
***Student ID is required.
Please note that the reduced registration fee must be paid by November 7. The full fee will be charged for payments made later than November 7 even if you send the registration form by this date. Also note thatthe number of banquet tickets to register on site is limited.
9For additional sets of the proceedings (book or USB flash drive*) and
CD-ROM
Book & CD-ROM USB & CD-ROM*
At the conference site
¥ 8,000¥ 8,000
Airmail after the conference¥ 15,000
not available
Domestic mail after the conference¥ 10,000
not available*Additional sets of USB flash drive and CD-ROM can be selected onlyby those applying with payment by November 7.

Payment
Three ways are provided for registration.

(1) e-Registration
Access the following URL.
http://www.idw.ne.jp/regist.html
e-Registration will be accepted until November 21, 2008.

(2) Mail or Fax Registration
Complete the registration form (FORM A) at the centerfold and send it
to the secretariat together with all necessary payments no later thanNovember 21, 2008.
IDW ’08 Secretariat
c/o Bilingual Group Ltd.
3-3-6 Kudan Minami, Chiyoda-ku Tokyo 102-0074, Japan
Phone: +81-3-3263-1345 Fax: +81-3-3263-1264
E-mail: idw@bilingualgroup.co.jp
The registration fee should be remitted by one of the following methods.
1. Credit Card (VISA, Master, Diners, AMEX, JCB, UC and CF
accepted.)
2. Bank Transfer to:
Bank:
Bank of Tokyo-Mitsubishi UFJ(Swift Code: BOTKJPJT)
Branch:Ichigaya Branch (Branch No. 14)
Account No.: 1474095 (Ordinary Account)
Account:
IDW 2008
Please attach a copy of the bank receipt with the registration
form to avoid any confusion.
All above payments should be made in JAPANESE YEN.
Also, please note that personal and traveler’s checks are not accepted.

(3) On-site Registration
Conference registration desk will be open:
December 2 (Tue.)
17:00 – 20:00
December 3 (Wed.)
8:00 – 18:00
December 4 (Thu.)
8:00 – 18:00
December 5 (Fri.)
8:00 – 15:00
The on-site registration fee will be payable by:
1. Cash (JAPANESE YEN only)
2. Credit Card (VISA, Master, Diners, AMEX, JCB, UC and CF
accepted.)
Bank transfer, bank check, or personal/traveler’s checks are notaccepted. Payment by cash is recommended.

Cancellation Policy
Refunds for registration, banquet, additional sets of proceedings etc.
will be made upon receipt by IDW ’08 secretariat of written cancellation,
by November 7. For cancellations received after November 7 or noshows, refunds will not be made. However, after IDW ’08 closes, a setof the proceedings book/USB flash drive and CD-ROM will be sent to
the registrants who have paid the registration fees.
10INQUIRIESIDW ’08 Secretariat
c/o Bilingual Group Ltd.
3-3-6 Kudan Minami, Chiyoda-ku Tokyo 102-0074, Japan
Phone: +81-3-3263-1345 Fax: +81-3-3263-1264
E-mail: idw@bilingualgroup.co.jp

ACADEMIC SUPPORTING ORGANIZATIONSThe Chemical Society of JapanThe Electrochemical Society of Japan (ECSJ)The Illuminating Engineering Institute of JapanThe Imaging Society of JapanThe Institute of Electrical Engineers of JapanThe Institute of Electronics, Information and Communication Engineers(IEICE)The Institute of Image Electronics Engineers of Japan
Japan Ergonomics Society (JES)The Japanese Liquid Crystal Society (JLCS)The Japan Society of Applied Physics
The Virtual Reality Society of JapanThe Society of Polymer Science, Japan

FUNDS
Funds for the conference are furnished in part by the following organizations:• Niigata Prefectural Government• Niigata Visitors & Convention Bureau (Niigata City)

Please keep an eye on the website (http://www.idw.ne.jp/)
for latest information.

SID 2009
International Symposium, Seminar and Exhibition
May 31 – June 5, 2009
San Antonio, Texas, USA
11

HOTEL AND TRAVEL INFORMATIONACCOMMODATIONSJTB Corp. will handle arrangements for your hotel reservations.
Hotel reservations can be made at the IDW official website.
http://www.idw.ne.jp/accommodation.html
JTB Tokyo Metropolitan Corp.
Corporate Sales Office Yokohama
Yokohama Convention Center
Phone: +81-45-316-4602
Fax: +81-45-316-5701
Office Hours: 9:30-17:30 (Weekdays only)
E-mail: jtb_convention@jtb.jp
There will be an on-site travel information desk during the conference
period to handle arrangements for transportations.

VISAS
Visitors from countries whose citizens must have visas should apply toa Japanese consular office or diplomatic mission in their respective
country. For further details, please contact your travel agent or the local
consular office in your country.
Attention: For some countries’ citizens, official documents prepared by
the secretariat will be needed. Please ask the secretariat at least twomonths before the conference.

JAPAN RAIL PASS AND JR EAST PASS
Japan Rail (JR) provides the following economical passes for someoverseas travelers. Because purchase in Japan and usage conditions
are restricted, please contact your travel agency prior to your trip.
(1) The JAPAN RAIL PASS is the most economical way to travel
throughout Japan by rail and JR buses.
(2) The JR EAST PASS is an economical and flexible rail pass to travel
around Eastern Japan.
Japan Rail Pass: http://www.japanrailpass.net/eng/en001.html
JR East Pass: http://www.jreast.co.jp/e/eastpass/

CLIMATE
The average temperature in Niigata during the period is around 5°C,
with temperatures of 8°C in the daytime and 2°C at night on average.

BANQUET
Wednesday, December 3, 2008
19:30–21:30
Room “Continental” (4F)
Hotel Okura Niigata
See page 9 for details
12

NIIGATA CITY
Niigata City is located in the center of the Japanese Islands, 250 km
north of Tokyo. The city has a long history as a port, and is distinguished for being the site of one of only five international ports
opened in 1868 when Japan resumed contact with other countries
after nearly 250 years of self-imposed isolation. Since that time, Niigata has developed into one of the most important modern international ports in Japan. Geographically, the city is distinctive in that it issurrounded by water. The Shinano and Agano, two of the largest rivers in Japan, run through the heart of Niigata before emptying into
the sea. Until relatively recently, the city was also crisscrossed by aseries of canals used to transport goods. Although the canals havebeen filled in to make the construction of modern roadways possible,
the willows that lined these canals still remain today and now serve
to lend a gentle air to the bustling downtown area.
When Niigata is mentioned, many people often think immediately of
the area’s delicious rice and sake or the city’s beautiful sunsets, but
the residents of Niigata themselves take pride, rather, in the spirit of
hospitality and community that so distinguishes the city.

PLACES OF INTEREST
Sado Island
Sado Island lies isolated from the mainland by 35 km, and is accessible by Sado Kisen, a ferry service from Niigata City which takes
two and a half hours by car ferry or only one hour by jet foil. Sado
Island has a perimeter of 263 km, and a total area of 854.6 km2. It is
one of the largest islands in Japan. Many tourists come from all overthe country every year to visit Sado, an island rich in natural beautyand historic monuments. In the ancient and middle ages, Sado was
the island of exile. Many noble or holy people, the ex-Emperor Juntoku (1197-1242), a Buddhist priest Nichiren Shonin (1222-1282)
and a Noh player Zeami (1363 - 1443), for example, were banishedthere. They left many historic relics as well as a strong influence on
the culture of Sado.
Niigata Furusatomura
This facility displays and provides information relating to Niigata’s
history, culture and sightseeing spots. There are shops selling various traditional crafts and local products, such as sake, rice and fish,for which Niigata is famous throughout the country. In addition, there
is a food court serving delicious local dishes.
Bandai Bridge
The present Bandai Bridge is the third to have spanned the ShinanoRiver (the first was built in 1887, the second in 1909 and the third in1929). The bridge is 307 m long, 21.9 m wide and consists of 6arches. Not only was it strong enough to survive the Niigata Earthquake during the 1960s, it has also become one of the symbols of
Niigata City.
Prefectural Government Memorial Hall
Built in 1884, this building was formerly home to the Niigata Prefectural Assembly. This Western-style building fuses elements of Western and traditional Japanese architecture. It is the only prefecturalassembly building dating from the early Meiji era still in existence inJapan and is designated as a nationally important cultural property.
NIIGATA INFORMATION DESK
Information concerning hotels and tours will be available during theconference period.
More information is available from these websites:(Niigata City Online)
http://www.city.niigata.jp/e_page/e_index.html(Niigata Visitors and Convention Bureau)
http://www.nvcb.or.jp/en/

13

Access to Conference Site
Narita Int'l
Airport(NRT)

Kansai Int'l
Airport(KIX)

JR Narita Exp.
60 min.
JR Haruka Exp.
50 min.

Flight 60 min.
2 flights / dayBus¥ 1,700 / 75 min.

Osaka int'lAirportItami (ITM)

Shin-Osaka
Station

JR Tokaido
Shinkansen Nozomi
160 min.

Central Japan
Int'l Airport
Centrair (NGO)

Incheon Int'l
Airport, Korea(ICN)
Int'l flight 115 min.
1 flight / day

Flight 65 min.
9 flights / day

SapporoHarbin, China
Shanghai, China etc.

Tokyo Station

Niigata Airport (KIJ)
JR Joetsu
Shinkansen Toki
130 min.

Taxi¥ 3,000 / 25 min.
Bus
¥ 370 / 25 min.

Bus
¥ 370 / 30 min.

¥ 12,690 from Narita Int'l Airport¥ 22,550 from Kansai Int'l Airport
Taxi¥ 2,000-3,000/ 20 min.

Niigata Station

Bandai City Bus Center
Taxi¥ 1,000 / 5 min.
15 min.
on foot
Bus¥ 200 / 15 min.

Bus
¥ 200 / 5-10 min.

Toki Messe Niigata Convention Center(as of October, 2008)
14

Niigata Downtown and Hotel Locations
N

Sado Kisen
Ferry Terminal

Conference Site
Toki Messe
Niigata Convention Center

Toki Messe

Ryuto Bridge
Bandai Bridge.

Shokugyo Anteisho Mae(Hello Work)

Bandai City Bus Center Mae

Bandai CityBus Center(Gate 6)

Ekimae Doori*

Niigata Eki Mae(Bus Terminal)
Gate 5: 17 Sado Kisen(via Toki Messe)
Gate 6: Niigata Airport
JR

igo
Ech

JR

Line
anse

hink

su S

Joet

xit

dai E

Ban

n

tatio

ta S

a
Niig

n

o
Toky

500 m

Bus route No.17* Only buses from Toki Messe stop.

Hotel Nikko Niigata (Conference Site)
Hotel Okura Niigata (Banquet Site)
Niigata Grand Hotel
ANA Crowne Plaza Niigata(formerly the Hotel Niigata)

Phone: +81-25-240-1888
Phone: +81-25-224-6111
Phone: +81-25-228-6111
Phone: +81-25-245-3333

Hotel Sunroute Niigata
Niigata Tokyu Inn
Niigata Toei Hotel
Niigata Daiichi Hotel
Court Hotel Niigata

Phone: +81-25-246-6161
Phone: +81-25-243-0109
Phone: +81-25-244-7101
Phone: +81-25-243-1111
Phone: +81-25-247-0505
15

Wednesday

December 3

IDW ’08
Wednesday, December 3
9:30 - 9:40

Snow Hall

Opening
Master of Ceremony: K. Betsui, Executive Chair, Hitachi, Japan
Opening Remarks
9:30
Y. Shimodaira, General Chair, Shizuoka Univ., Japan
A. Mikami, Program Chair, Kanazawa Inst. of Tech.,Japan
9:40 - 11:00

Snow Hall

Keynote Addresses
Co-Chairs:

A. Mikami, Program Chair, Kanazawa Inst. of Tech.,Japan
Y. Shimodaira, General Chair, Shizuoka Univ., Japan

Keynote Address - 1
9:40

The Rise of Eco Televisions: Opportunity or
Challenge?

T. J. M. Schoenmakers
Philips, the Netherlands
Better-featured, bigger televisions, massive content offering, plus
consumers in emerging economies becoming more affluent will lead tohigher environmental impacts. This situation should be assessed from aholistic environmental lifecycle perspective: for televisions, energy andmaterials are dominant. During the keynote we will review industrial
challenges and how these are effectively addressed.
Keynote Address - 2
10:20

QoE Based IPTV Services

J. Kishigami
NTT, Japan
Through the service discovery, enjoying the content, and the aftercare,a variety of quality of services will be measured on IPTV services.
Beyond the simple linear TV and Video-on-demand service, more
attractive entertainment will be realized by the metadata technology.
Total satisfaction of the user (QoE) is the most important issue to makethe IPTV service succeed.
----- Break -----

16

Wednesday

December 3

11:10 - 11:50

Snow Hall

Invited Address
Co-Chairs:

R. Hattori, Program Vice-Chair, Kyushu Univ., Japan
S. Uchikoga, Program Vice-Chair, Toshiba, Japan

Invited Address
11:10

Learning from Monet: Renown Artists andDisplay Design

C. M. Falco
Univ. of Arizona, USA
The artist David Hockney and I identified optical evidence
demonstrating painters as early as Jan van Eyck (c1425) usedprojections for producing portions of their images. In making these
discoveries, we developed fundamentally new insights into image
analysis, which I am now applying to problems in image display andanalysis.

EXHIBITION
12:00–18:00
10:00–18:00
10:00–14:00

Wednesday, Dec. 3, 2008
Thursday, Dec. 4, 2008
Friday, Dec. 5, 2008

Exhibition Hall B
Toki Messe Niigata Convention CenterFree admission with your registration name tag.

IDW ’09
The 16th International Display Workshops
December 9-11, 2009
World Convention Center Summit
Phoenix Seagaia Resort
Miyazaki, Japan
http://www.idw.ne.jp/
17Wednesday

December 3

Workshop on
LC Science and Technologies
Wednesday, December 3
13:20 - 13:30

Marine Hall

Opening
Opening Remarks
13:20
T Nose, Akita Pref. Univ., Japan
13:30 - 14:55

Marine Hall

LCT1: Fascinating LC Materials
Chair:
Co-Chair:
LCT1 - 1:
13:30

A. Götz, Merck KGaA, Germany
A. Fujita, Chisso Petrochem., Japan
Invited Carbon Nanotube Doped LC for OCB Cells:
Physical and Electro-Optical Properties
S.-Y. Lu, L.-C. Chien
Kent State Univ., USA

We report carbon nanotube (CNT) doped liquid crystals which show
significant improvement in response time for optical controlledbirefringence (OCB) cells. Addition of CNT in liquid crystal (LC)increases the surface anchoring energy. The anchoring enhancement isdue to the π-π electron stacking among the CNTs, LC and alignment
layers.
LCT1 - 2:
13:55

Invited Structure and Dynamics of Cubic and“Isotropic” LC Phases
J. Yamamoto
Kyoto Univ., Japan

Recently, liquid crystal phases with cubic symmetry receive muchattention, such as cholesteric blue and cubic phases. We have foundisotropic smectic blue phase and thermotropic sponge phase, which
has liquid like “isotropic” symmetry. In these systems, structure anddynamics are intrinsically important to clarify the nature of the phases.

18

Wednesday
LCT1 - 3
14:20

December 3
Wide-Banded Cone Lasing Emission in a Dye-Doped
Cholesteric LC with a Single Pitch
C.-R. Lee, H.-C. Yeh, T.-D. Ji, K.-L. Lin, S.-H. Lin,
T.-S. Mo*, C.-T. Kuo**, K.-Y. Lo***, S.-H. Chang,
A.Y.-G. Fuh, S.-Y. Huang****Nat. Cheng Kung Univ., Taiwan*
Kun Shan Univ. of Tech., Taiwan**Nat. Sun Yat-Sen Univ., Taiwan***Nat. Chia Yi Univ., Taiwan****
Chung Shan Medical Univ., Taiwan

This investigation reports a novel wide-banded cone lasing emission
based on a planar dye-doped cholesteric liquid crystal film with a single
pitch. The lasing wavelength in this lasing distributes continuously from~676.7 to ~595.6 nm measured at continuously increasing obliqueangle relative to the helical axis from 0° to 50°.
LCT1 - 4L
14:40

Precise Measurement Method of LC Material
Parameters
T. Kishimoto, K. Wako, T. Ishinabe*, T. Miyashita*,
T. Uchida*
Aomori Support Ctr. for Ind. Promotion, Japan*Tohoku Univ., Japan

A highly precise measurement method of LC material parameters was
proposed. By application of new driving scheme of LC, andcompensation for capacitance of alignment layer and anchoring
strength of LC cell, we obtained reliable measurement values using thenumerical fitting method on the capacitance-voltage property of LC cell.
----- Break -----

15:00 - 16:20

Marine Hall

LCT2: Characterization of LC Alignment
Chair:
Co-Chair:
LCT2 - 1:
15:00

M. Kimura, JSR, Japan
I. Nishiyama, DIC, Japan
Invited Continuous Control of Pretilt Angle of LC
D. Kang, J.-H. Lee*, C. Rosenblatt*Soongsil Univ., Korea*Case Western Reserve Univ., USA

A simple method for continous control of the pretilt angle is presented.
Two different types of polyimide, one used for homeotropic alignment,
and the other used for planar alignment, are mixed. By controlling thebaking temperature and mixing ratio of the mixture the pretilt angle canbe tuned continuously.

19

Wednesday
LCT2 - 2
15:25

December 3
Characterization of High Pretilt Angle Generated by
Blend Polyimide
T. Shimizu, M. Kimura, T. Akahane
Nagaoka Univ. of Tech., JapanThe alignment characteristics of blend polyimide of planar alignment(PI-H) and vertical alignment (PI-V) were studied. The relationshipbetween the surface energy and the pretilt angle was found by the blend
polyimide films treated by the rubbing method or UV irradiation.
LCT2 - 3
15:45

Evaluation of Surface Alignment of LC Using Surface
Plasmon Resonance Spectroscopy
A. Ikarashi, A. Baba, K. Shinbo, K. Kato, F. Kaneko
Niigata Univ., Japan

We report the evaluation of tilt angles of LC molecules near the surfaceof SiO2 alignment layers and in the whole cell under applying constantvoltages. Surface-Plasmon-resonance-spectroscopy and waveguidemode in attenuated total reflection configuration are used to monitor theproperty of molecules orientation on the surface and the bulk.
LCT2 - 4L
16:05

UV Photoalignment Technology Comparable to the
Rubbing Alignment Method in Terms of the
Azimuthal Anchoring Energy
J. W. Woo, D. C. Shin, E. J. Lim, H. J. Park, H. H. Shin
LG Display, Korea

By using the newly developed material and our process technology, we
have achieved the azimuthal anchoring energy of the photoaligned layercomparable to that of the rubbed one. We are convinced that theincrease of the anchoring energy of photoalignment technology leads tothe decrease of an image sticking level.
----- Break -----EXHIBITION
12:00–18:00
10:00–18:00
10:00–14:00

Wednesday, Dec. 3, 2008
Thursday, Dec. 4, 2008
Friday, Dec. 5, 2008

Exhibition Hall B
Toki Messe Niigata Convention CenterFree admission with your registration name tag.
20

Wednesday

December 3

16:40 - 18:00

Marine Hall

LCT3: Image Sticking Measurement
Chair:
Co-Chair:J. C. Kim, Pusan Nat. Univ., Korea
S. Komura, Hitachi Displays, Japan

LCT3 - 1
16:40

Influence of Ion on Voltage Holding Ratio in LCD
M. Mizusaki, Y. Nakanishi, Y. Yoshimura, Y. Yamada,K. Okamoto
Sharp, JapanThe relation of voltage holding ratio (VHR) with impurity ion in liquid
crystal cells was analyzed based on the model of adsorption anddesorption to and from the surface of alignment layer. The result
indicates the desorption energy of the adsorbed ion affects VHRstrongly compared with the adsorption energy.
LCT3 - 2
17:00

Development of New Evaluation Method for Image
Sticking
N. C. Choi, H. K. Ahn, S. T. Shin
Samsung Elect., Korea

We propose the measurement tool that is related with the polarization
due to the surface polarization of alignment layer and ion transportationof the dielectric materials of the cell.
LCT3 - 3
17:20

A Novel Measurement Method of Ion Density in TFTLCD Panels
M. Inoue
Toyo, Japan

It is well known that contaminations in TFT-LCDs cause panel defects
such as Mura, Image sticking and so on. To investigate the existence ofcontaminations in TFT-LCDs, test panels without TFTs are required. In
this paper, I propose a novel measurement method of Ion Density in areal TFT-LCD panel.
LCT3 - 4
17:40

Precise Measurement of Very Low Retardation by
Using Transmission Ellipsometry
Y. S. Shin, J. W. Ryu, Y. K. Kim*, S. Y. Kim
Ajou Univ., Korea*Samsung Elect., Korea

Ellipsometric technique utilizing compensator is used for thecharacterization of samples with very low retardation. Optic axes andretardations of low retardation films and weakly rubbed polyimides are
determined.

Author Interviews
18:00 – 19:00
21

Thursday

December 4
Thursday, December 4

9:00 - 12:00

Exhibition Hall B

Poster LCTp1: High Performance LCDs
LCTp1 - 1

Wide-View Crossed Circular Polarizers for LCDs
C.-H. Lin
Nat. Sun Yat-Sen Univ., Taiwan

An optical compensation principle of the crossed circular polarizers isdeveloped to widen the viewing angle of circular polarizer-type multidomain vertical-alignment LCDs (CPMVA-LCDs). Based on thiscompensation principle, the CPMVA-LCD theoretically has a complete
80° viewing cone for contrast ratio (CR)>100:1.
LCTp1 - 2

Optimized Cell Parameters of TN-LCD with WV-EA
Film for Excellent Center Contrast Ratio and DownSide Viewing Angle
X. M. Wang, L. B. Mao, Y. W. Chiu, T. C. Chung,
T. S. Jen
Infovision Optoelect., China
JiangSu (IVO) Flat Panel Display Tech. Res. Inst., China

Narrow down-side viewing angle (DVA) is a headachy issue of TN-LCD
with compensation film. The effects of cell and WV-EA film (FUJIFILM)
parameters were investigated in this paper. Through the simulated andexperimental results, an optimum database for obtaining the excellent
center contrast ratio and DVA contrast ratio was built.
LCTp1 - 3

Extensive Study on Optical Anisotropy and Its NonUniformity of Wide View Film
J. W. Ryu, Y. S. Shin, Y. K. Kim*, S. Y. Kim
Ajou Univ., Korea*
Samsung Elect., Korea

We analyzed the polarization state change of the light passing througha wide view film as the azimuth angle and the tilt angle were varied.
Using the modeling technique of ellipsometry, we searched the best fit
orientation distribution of the optic axis of the discotic liquid crystal.

SID 2009
International Symposium, Seminar and Exhibition
May 31 – June 5, 2009
San Antonio, Texas, USA
22

Thursday
LCTp1 - 4

December 4
A New Transflective LCD Using a Single Cell-Gap
OCB-Mode with Fast Response Time
T. Ohnishi, I. Fukuda, T. Ishinabe*, T. Uchida*
Kanazawa Inst. of Tech., Japan*Tohoku Univ., JapanA new transflective LCD using a single-cell-gap OCB-mode
compensated with discotic liquid crystal films and C-plates was
designed to improve response time and viewing-angle performance oftransflective displays. We verified that wide viewing angle and highcontrast ratio could be achieved in both reflective and transmissive
parts of the LCD.
LCTp1 - 5Single Cell Gap Single Mode MTN Transflective LCD
T. Du, H. Y. Mak, P. Xu, C. Vladimir, H. S. Kwok
Hong Kong Univ. of S&T, Hong Kong

A new design of single cell gap transflective LCD using 75 degree twist
nematic mode has been proposed. The electro-optical characteristics inthe transmissive part and reflective part are matched. This single TNtransflective configuration exhibits high contrast, wide viewing angle,
fast response and high transmittance / reflectance.
LCTp1 - 6

Fast Switching Characteristics of a VA LC Cell with
Pixel-Isolating Polymer Wall Using Reactive Mesogen
D. H. Song, S. R. Lee, T.-H. Yoon, J. C. Kim, H. S. Woo*,
S. T. Shin*, J. H. Souk*
Pusan Nat. Univ., Korea*
Samsung Elect., Korea

We demonstrate a vertical aligned (VA) nematic liquid crystal (LC) cellwith pixel-isolating polymer structure using reactive mesogen. Due tothe multi-dimensional LC alignment effect of the wall, the proposed cellshows faster response time than conventional VA LC cell, without any
loss of transmittance within a pixel area.
LCTp1 - 7

An Optical Configuration of VA LC Cell for
Improvement of the Viewing Angle
S.-H. Ji, J.-M. Choi, G.-D. Lee
Dong-A Univ., Korea

We propose an optical configuration of vertical alignment (VA) liquid
crystal (LC) cell to eliminate off-axis light leakage in the dark state invisible wavelength range. The advanced VA LC cell has compensation
films of a negative C-plate and a half-wave biaxial film.

23Thursday
LCTp1 - 8

December 4
Transflective PVA LCD with Single Cell Gap
S. S. Yang, S. Y. Park, B. G. Cho, T. Won
Inha Univ., Korea

In this paper, we propose a transflective PVA mode structure with asingle cell gap. As an exemplary cell, we selected 8-domain PVA modewith chevron-shaped electrode. Our design significantly improves
aperture ratio and optical performance while minimizing the dark region.
Optical characteristics were calculated with commercial 3D-FEM solver,
TechWiz-LCD.
LCTp1 - 9

A Simulation Study on Excellently Optimized Viewing
Angle Performance for OCB LCDs
Y. C. Wang, C. R. Sheu, Z. Y. Yen*, J. L. Chen*, T. Y. Ho*,
D. J. Chen*
Nat. Cheng Kung Univ., Taiwan*Taiwan TFT LCD Assn., Taiwan

An excellently optimized viewing angle performance for OCB isachieved with the commercial simulation software, DIMOS2.0. For D65
illumination, the optimized compensated cell possesses contrast ratio
over 100 almost distributed all viewing angles. At on-axis viewing
direction, contrast ratio is over 1000.
LCTp1 - 10

Multi-Domain Transflective LCD Using MTN and ECB
Modes by Photoalignment Technology
T. Du, H. Y. Mak, P. Z. Xu, V. Chigrinov, H. S. Kwok
Hong Kong Univ. of S&T, Hong Kong

A new design of single cell gap transflective liquid crystal display (LCD)
using low twist nematic (LTN) and electricity controlled birefringence(ECB) modes has been proposed. This configuration has a highcontrast, good viewing angle, fast response and high transmittance /reflectance. Also the fabrication process is easy.
LCTp1 - 11

A Wide Viewing Angle Advanced MVA LCD with InCell Retarder
P.-C. Yeh, Y.-S. Jeng, C.-J. Hu, W.-M. Huang
AU Optronics, Taiwan

This paper discloses an in-cell retarder on the CF side of 2.4" AMVALCD. The thickness of in-cell retarder with coating RM (reactive
mesogens) can be adjustable and get proper compensation. In-cell
retarder will be used in place of attached compensation film to improvewide viewing angle of 2.4" AMVA-LCD.

24

Thursday
LCTp1 - 12

December 4
Driving Characteristic of FLC Controlled by Using
Asymmetric Alignment Method
N. Sawatari, M. Ishikawa, R. Harada, M. Okabe
Dai Nippon Printing, Japan

We have found that using the asymmetric alignment method control thedriving characteristic of Ferroelectronic Liquid Crystal (FLC). The FLCof V-sharp mode change to Half-V by using the alignment method.
Furthermore, we have fabricated a field sequential color display using
the alignment method and Inkjet printing method.
LCTp1 - 13

Improvement of Transient Response Characteristics
of Polymer Stabilized Bend Alignment LC Cell
T. Kobayashi, Y. Asakawa, T. Takahashi, S. Saito
Kogakuin Univ., Japan

It is shown that the decay time of the polymer stabilized bend (PSB) cell
can be improved by using a fluorinate nematic mixture, ZLI-4792 andRMM-34 (Merck) as the LC material and the UV curable LC monomer,
respectively.
LCTp1 - 14

Electro-Optical Properties of Optically Compensated
No-Bias-Bend LCD
H. Shidara, T. Takahashi, S. Saito
Kogakuin Univ., Japan

It is shown that the no-bias-bend (NBB) cell is not always superior to theconventional bias-bend (BB) cell comparing the electro-opticalcharacteristics and transient response properties of the NBB cell withthat of the BB cell keeping the application to optically compensated(OC) cell in mind.
LCTp1 - 15

Chirality Induced Acceleration of Bend-Growth Rate
for OCB ModeF. Ogasawara*,**, K. Kuboki***, K. Wako***, T. Uchida****,
A. Yoshizawa**

Hirosaki Univ., Japan**Tohoku Chem., Japan***JST, Japan****

Tohoku Univ., Japan

We observed bend-growth processes for OCB-mode and detected
asymmetric-splay to bend transformation at 0 °C. We investigatedkinetic effects of a chiral additive on the bend-growth processes. The
chiral additive was found to accelerate the asymmetric-splay to bendtransformation in all the directions. We discuss structure-property
relationships in chiral compounds.

25

Thursday
LCTp1 - 16L

December 4
Novel Optical Compensation Film for LCD Viewing
Angles Reduction
H. L. Ong
Kyoritsu Optronics, Taiwan

A novel optical compensation film is used to reduce the TN/LCD viewing
angle cone, with no change on on-axis contrast ratio and transmission.
Test TN panels with this compensation film are fabricated andconfirmed the results. This compensation film can also be used for MVA
and IPS/LCD viewing angle reductions.
9:00 - 12:00

Exhibition Hall B

Poster LCTp2: Novel LCD Modes
LCTp2 - 1

Reflective Configuration of a Bistable Twisted
Nematic LCD with Left- and Right-Handed π-twist
States for High Contrast Ratio
J. H. Lee, S. R. Lee, T.-H. Yoon, J. C. Kim
Pusan Nat. Univ., Korea

The authors propose a reflective configuration of a bistable twisted
nematic (BTN) liquid crystal (LC) display which has two stable states ofleft- and right-handed twist. By employing a circular polarizer and apositive, the BTN LC cell shows a high contrast ratio as well as excellent
wavelength dispersion characteristics.
LCTp2 - 2

Transition from U-State to T-State through an OverTwisted State in Bi-Nem LC Cell
Y. Uchiyama, H. Terashi, T. Takahashi, S. Saito
Kogakuin Univ., Japan

Transition from the U state to the T state through an over twisted
process in the Bi-Nem cell was experimentally observed for the firsttime. It is theoretically shown that such transition through the overtwisted process occurs in the case of relatively large surface dissipation
coefficient.
LCTp2 - 3

Novel Bistable LCD Switching between Two Twisted
Directions
T. Kobayashi, K. Suzuki, S. Saito, T. Takahashi
Kogakuin Univ., Japan

A novel bistabel LCD having a large pretilt angle and twisted structure
was proposed. State-I has a twisted angle of φ I with the splay distortion,and State-II has a twisted angle of φ II (=π-φ I) without splay distortion.
The computer simulation was carried out and the sample cell was
fabricated.

26

Thursday
LCTp2 - 4

December 4
Numerical Studies of Fringe Field Effect Dependingon Pretilt Angel in LCOS Microdisplay
H. Son*, M. S. Kim *,**, N. C. Song**, M. H. Oh*, J. Kang**Dankook Univ., Korea**Uni-Display, Korea

The fringe field effects of a Liquid Crystal On Silicon (hereinafter“LCOS”) microdisplay were analyzed with the 3-dimensional LC
simulator. Because of the small cell pitch (8.1 um), the undesirable
fringe field effect could be diminished the optical characteristics ofLCOS panel. The dependence of pretilt angle on the fringe field effectwas studied based on the reflected-light distribution form the panel. As
the pretilt angle was decreased, the fringe field was moved to the pixeledge and the whole reflected light intensity from the pixel wasincreased.
LCTp2 - 5

Electric-Optic Characteristics of Nematic LC with
Chiral Dopant in Fringe-Field Switching Mode
O.-S. Son, S.-Y. Choi, Y.-I. Park, D.-H. Suh, G. Son
BOE HYDIS Tech., Korea

We have investigated the electro-optic characteristics of LC with chiraldopant at low cell gap in fringe-field switching mode structure. As therotation direction of chiral dopant and twist direction of LC correspond,
the transmittance increases. In the opposite case, the operation voltage
decreases.
LCTp2 - 6

Study of LC Alignment Films Anisotropy by NearEdge X-Ray Absorption Fine Structure Spectroscopy
M. S. Kwak, H. R. Chung, H. M. Kwon, J. H. Kim,
D. K. Han, S. M. Lee, C. G. Lee, S. Y. Cha
LG Display, Korea

The anisotropy of the alignment films (AFs) by the kind of AF wasanalyzed through NEXAFS. Result of NEXAFS analysis, the anisotropyof surface was appeared in each AFs. It was able to explain being
arranged in the direction set to rubbing in plane of AF molecules alongwith substrate.
LCTp2 - 7

Novel Cholesteric LCs with Dual-Chirality toward
High Reflectivity
C.-M. Wu, S.-H. Liu, C.-L. Chin, A.-C. Chen, Y.-C. Liao,
K.-L. Cheng
ITRI, Taiwan

Novel dual-chirality cholesteric LC materials were prepared andevaluated in a dual-cell system. Chiral dopants of the identical chemical
structure with (+) and (-) chirality in the presence of nematics yielded
better reflectance than the different structures of the chiral dopants with(+) and (-) chirality.

27

Thursday
LCTp2 - 8

December 4
See-Through LCDs Using Transparent Light-Guide
PlatesW.-S. Choi, J.-H. Lee, J. Yeon, J.-B. Yoon
KAIST, Korea

See-through black and white (B/W) liquid crystal displays (LCDs) were
implemented by using a transparent light-guide plate (LGP) and a colorfilterless film compensated super nematic (FSTN) LC panel.
Furthermore, feasibility of further development as full color see-throughdisplays are proven by a initial work conducted with a blue light source.
LCTp2 - 9

Low Power LCD with Low Supply Voltage
A. R. Shashidhara, T. N. Ruckmongathan
Raman Res. Inst., India

Low power dissipation and low voltage operation are achieved by
combining the best features of several addressing techniques. A large
number of gray shades are displayed with simple drivers and controller
to reduce cost.
LCTp2 - 10

Withdrawn

LCTp2 - 11

Electro-Optical Device Using Electrospun CelluloseBased Nanofibres
S. Kundu*, P. L. Almeida*,**, J. P. Borges*,***,M. H. Godinho*,***, J. L. Figueirinhas****,******CENIMAT, Portugal**

EST/IPS, Portugal***New Univ. of Lisbon, Portugal****CFMC-UL, Portugal*****

Instituto Superior Técnico, Portugal

In this work we present a completely new method of preparing cellulose
based electro-optical cells which gives a new idea of developing
displays with a lower production cost. These devices can be used as
shutters since they can be electrically controlled to be opaque or to betransparent.
LCTp2 - 12L

Enhanced of High Image Quality and Fast Response
Time with AFFS Plus
S. Choi, Y. H. Lee, J. H. Park, J. H. Lee, S. H. Kim,
Y. S. Jo
Hydis Techs, Korea

We have developed AFFS+ technology with enhanced image quality for
notebook and tablet. We improved contrast ratio (>800:1), responsetime (≤ 20ms) and wide viewing angle with adopting low cell gap andoptimized design between pixel electrode and data line. We propose
new AFFS+ design for high image quality.

28

Thursday

December 4

LCTp2 - 13L

Electro-Optic Devices Based on Ferroelectirc Liquid
Crystal for Flexible Display
S.-J. Jang, T.-H. Lee, H.-M. Kim, C.-S. Moon, T.-K. Park,
J.-Y. Chun, S. Kang*, H.-H. Hwang*, S.-H. Kim
LGINNOTEK, Korea*Image Lab, Korea

We studied the bistable properties of Ferroelectirc Liquid Crystal (FLC)
for flexible display. The optimization of device depends on compositionof the FLC/chiral dopant mixtures and the rubbing strengths. Finally, we
have fabricated the 2.2 inch Flexible FLC display using plastic substrate
and post-spacer.
9:00 - 12:00

Exhibition Hall B

Poster LCTp3: Novel Applications
LCTp3 - 1

Effects of Thermal Modulation on Anisotropic
Diffraction in Orientation-Controlled LC Composite
Volume Gratings
A. Ogiwara, M. Minato, S. Horiguchi, H. Kakiuchida*,
K. Yoshimura*, H. Ono**, A. Emoto**, N. Mohamad**Takamatsu Nat. College of Tech., Japan*AIST, Japan**Nagaoka Univ. of Tech., Japan

Effects of anisotropic diffraction on thermal modulation in volume
gratings using the composite materials of nematic liquid crystals (LC)and LC diacrylate monomers are studied. Experimental results showthat the anisotropic diffractions induced by the thermal modulation arecontrolled by the materials of high refractive indices and the rubbing
process.
LCTp3 - 2

Luminance Improvement in LC
Electrochemiluminescent Cells by Heating Stir
Process
T. Horiuchi, M. Honma, T. Nose
Akita Pref. Univ., Japan

Emission properties in liquid crystal (LC) electrochemiluminescent(ECL) cells doped with an organic fluorescent dye are investigated. A
heating stir process is introduced to improve the ECL properties. The
mechanism of the significant increase in the luminance and the current
density is discussed by the photoluminescent experimental results.

29

Thursday

December 4

LCTp3 - 3

Effect of Concentration of Embedded LC Director inElectrolyte on Power Conversion Efficiency in DSSC
H. K. Kim, S.-H. Jin*, G.-D. Lee
Dong-A Univ., Korea*Pusan Nat. Univ., Korea

We optimize concentration rate of the Liquid Crystal in the polymer
electrolyte for light efficiency enhancement in a quasi-solid-state dyesensitized solar cell. As a result, we can know the fact that the PCE andfill factor have a special rate of LC concentration in DSSC.
LCTp3 - 4

Relationship between Electric Properties of LC
Devices and Structures of Hybrid Nanoparticles
Used as a Dopant
N. Nishida, S. Ohta, Y. Shiraishi, S. Kobayashi,
N. Toshima
Tokyo Univ. of Sci., Yamaguchi, Japan

We prepared Pd nanoparticles protected by 4'-pentylbiphenyl-4carbonitrile (5CB-Pd) or poly(Nvinyl-2-pyrrolidone) (PVP-Pd). The LCD
was fabricated by liquid crystal doped with Pd nanoparticles. Here, we
discuss electro-optic and electric properties, especially the relationshipbetween the frequency modulation and conductance, of LCDs dopedwith nanoparticles.
LCTp3 - 5L

Zoom System Realized Using Liquid Crystal Lenses
M. Ye, M. Noguchi*, B. Wang, S. Sato
Akita Pref. R&D Ctr., Japan*Scalar, Japan

A zoom system built up using LC lenses with electrically tunable focal
lengths is reported. Instead of mechanical moving of lenses inconventional zoom systems, the zoom function in this new system isaccomplished by adjusting the voltages applied on the LC lenses. Zoom
ratio of approximate 1.5:1 is observed.
9:00 - 12:00

Exhibition Hall B

Poster LCTp4: Display Evaluation
LCTp4 - 1

Analysis of Zone Image Sticking in an MVA LCD Cell
R. Kamoto
Micro Analysis Lab., Japan

Image sticking phenomenon is the most important issues on LCD.
There are two kinds of image sticking, it has tried to analyze the zone
image sticking in the cell using micro analysis methods such as µ-IR
and µ-MS.

30

Thursday
LCTp4 - 2

December 4
Analysis of Influence Parameters for Touch Mura
Improvement
H. Zhao, P. Zhang, J. You, L. Huangfu, J. Lee
BOE Optoelect. Tech., China

Influence parameters for Touch Mura have been discussed in thispaper. A modeling experiment was carried out to simulate the panel
deformation when it was touched. Our research show that small panel
bending, small panel align accuracy, increasing LC amount, andreducing PS density can improve the Touch Mura.
LCTp4 - 3

Contrast Ratio Variation Due to Light Scattering fromLC Layer by Temperature Effect in TN Panel
K.-T. Huang, A. Chao, K. Chen, C.-H. Yu
HannStar Display, Taiwan

Temperature variation affects the LC parameters and light scatteringindex (Slc) of LC is changed. We found that the CR of panel is inverse
proportional to the Slc at different temperature. Slc is proved that it canbe utilized in evaluating the light leakage by LC layer of TN panel.
LCTp4 - 4

Measurement Method of Wire-Frame Flickering
K. Song, S. W. Lee
Kyung Hee Univ., Korea

This work proposes a measurement method of wire-frame flickering(WFF) of a LCD. We propose a vertical stripe line pattern to measure
WFF because the slowly scrolling pattern causes the WFF on the LCD
screen. We analyze the luminance fluctuation measured from the WFF
using the conventional contrast method and JEITA method.
LCTp4 - 5

Determinations of Twist Angle, Pretilt Angle, and Cell
Gap of a TN LC Cell by Phase-Sensitive Heterodyne
Interferometry
H.-C. Tseng, R.-B. Li, W.-C. Chen, K.-H. Yang,
S.-F. Wang*
HannStar Display, Taiwan*
Ching Yun Univ., Taiwan

We propose a new measuring method to determine the twist angle,
pretilt angle, and cell gap of a TN LC cell by comparing the measured
phase retardation versus the rotation angle of the TN cell by phasesensitive heterodyne interferometry and theoretically calculated values.
It provides the most sensitive way.

31

Thursday
LCTp4 - 6

December 4
Leslie Viscosity Coefficients of Nematic LCs with
Negative Dielectric Anisotropy Determined byTransient Current Technique
Y. Iwata, H. Naito, M. Inoue*, H. Ichinose**, M. KlasenMemmer***, K. Tarumi***Osaka Pref. Univ., Japan*Toyo, Japan**Merck, Japan***
Merck KGaA, Germany

A method for determining the viscosities of nematic LCs with negative
dielectric anisotropy based on analysis of the transient current, induced
by step voltage excitation, in homeotropic nematic LC cells is proposed.
The Leslie viscosity coefficients can be determined by fitting the
calculated transient current to the experimental data.
LCTp4 - 7

Electrical and Surface Characteristics of Polyimide
Film on ITO Coated Glass Substrate
M. Inoue*,**, M. Akimoto*, S. Kobayashi*, K. Takatoh*,
H. Endoh***, H. Fukuro****Tokyo Univ. of Sci., Yamaguchi, Japan**Toyo, Japan***

Nissan Chem. Ind., Japan

It is well known that polyimide film plays an important role of aligningliquid crystal molecules. In this paper, we investigate electrical andsurface characteristics of a polyimide film on a glass substrate andconfirm that the polyimide film of the lower baking temperature has
diode characteristics.
LCTp4 - 8

Two Photon Fluorescence Microscopy Technique forThree-Dimensional Imaging of LC Director
H. Yoshida, S. Suzuki, C.-H. Lee, Y. Miura, K. Tokuoka,
A. Fujii, M. Ozaki
Osaka Univ., Japan

A microscopic technique to view the three-dimensional liquid crystal
director distribution is presented. Polarization flouorescence microscopy
employing two-photon absorption allows monitoring of the director in
the focal plane of the objective, and therefore three-dimensional
information can be gained by scanning the focal plane in the depth
direction of the sample.

32

Thursday
LCTp4 - 9

December 4
Polar Anchoring Energy Measurement of Preimidized Polyimide with Low Temperature Process
C. W. Kuo, M. J. Lee, Y. R. Lin, C. K. Ku, C. C. Liao,
Y. S. Hung*, S. J. Huang*
ITRI, Taiwan*Nat. United Univ., Taiwan

In this paper, anchoring energy of pre-imidized polyimide film using low
temperature process was discussed. The anchoring energies ofpolyimide films was calculated by R-V method, and an optical
heterodyne interferometer arrangement was applied to measure phaseretardations (R) of LC cells versus applied voltages (V).
LCTp4 - 10L

New Optical Geometry for Determination of
Rotational Viscosity Coefficient of Nematic Liquid
Crystals
S. V. Pasechnik*,***, A. V. Dubtsov*,**, D. V. Shmeliova*,
V. A. Tsvetkov*, V. G. Chigrinov****Moscow State Univ. of Instr. Eng. & Computer Sci.,

Russia**Dublin Inst. of Tech., Ireland***Hong Kong Univ. of Sci. & Tech., Hong Kong
We present the new results of experimental investigation of a pure twist
deformation of nematic liquid crystals induced by homogeneous “inplane” electric field in the new optical geometry. Analysis of results via
simple model enabled us to propose a new method for determination of
the rotation viscosity coefficient.
LCTp4 - 11L

A Novel Quantification of Image Sticking
H. S. Lin, C. S. Chang, Y. C. Lin, C. J. Chen, C. L. Yang,
J. P. Pang
InnoLux Display, Taiwan

Image sticking was successfully forecasted by quantifying mobile ions.
The amount of Ions proportion to dc bias was verified. In voltage-variant
ion curve, there are three distinct areas including off, linear andsaturation. This paper finally proposed that dc bias over 2V would resultin heavy image sticking.

33

Thursday

December 4

9:00 - 12:00

Exhibition Hall B

Poster LCTp5: Characterization of LC Alignment
LCTp5 - 1

Adjustable Pretilt Angle Generated by Ion Beam
Exposure and Followed by Rubbing Treatment
Z. Y. Yen, C. W. Hsiao, B. H. Wu, F. Y. Lien, J. L. Chen,
D. J. Chen
Taiwan TFT LCD Assn., Taiwan

The pretilt of nematic LC cells can be controlled by ion beam exposure
on an alignment layer followed by rubbing treatment. Variable pretilt
could be obtained by changing the ion beam parameters. The OCB
cells with a pretilt of near 60° were manufactured that show no splay-tobend transition.
LCTp5 - 2

LC Alignment on SiOx Film Surfaces by Using Ion
Beam Scanning Method
B. K. Jo, P. K. Son, J. C. Kim, T.-H. Yoon, S. J. Rho*,
S. T. Shin*, J. S. Kim*, S. Y. Kim*, J. H. Souk*
Pusan Nat. Univ., Korea*Samsung Elect., Korea

We propose a method for the liquid crystal (LC) alignment through theion beam scanning. We demonstrated vertical alignment of LC on SiOx
film surfaces by ion beam scanning with a stainless steel scanningmask.
LCTp5 - 3

Withdrawn

LCTp5 - 4

Temperature Dependence of Photoalignment of DyeDoped LCs
C.-Y. Huang, C.-D. Lin, T.-S. Mo*, K.-Y. Lo**, C.-R. Lee
Nat. Cheng Kung Univ., Taiwan*Kun Shan Univ. of Tech., Taiwan**
Nat. Chiayi Univ., Taiwan

A pump-probe method for measuring the reorientation angle of thesurface director versus exposure time is utilized to study an influence oftemperature on dynamic adsorption-induced photoalignment in dyedoped liquid crystals. Optimal rise time of the photoalignment exists at
an inter-temperature due to the competition between opposite
temperature-dependent factors.

34

Thursday
LCTp5 - 5

December 4
Optical Properties of Polyimide(CBDA-BAPP) Thin
Films
T. Mizunuma, H. Shitomi*, S. Matsumoto
Meiji Univ, Japan*AIST, Japan

Changes in the optical properties of polyimide thin films upon exposure
to linearly polarized UV radiation were investigated. It was found thatthe photoalignment behaviors of LC molecule on CBDA-BAPP thin films
are strongly related to the photodecomposition of cyclobutane ring of
the cyclobutane tetracarboxylic dianhydride structure.
LCTp5 - 6

Orientation Measurement of LC Molecule Depositedon Rubbed Polyimide Film Used by GrazingIncidence X-Ray Diffraction
T. Koganezawa, I. Hirosawa, H. Nameki, H. Ishii*
Japan Synchrotron Radiation Res. Inst., Japan*Nissan Chem. Ind., JapanWe developed a new method for characterizing molecular distribution invery thin liquid crystal layer. The clear anisotropic distribution of a liquid
crystal molecular in thin (5 〜 40nm) layer evaporated onto rubbed
polyimide film was successfully observed used by grazing-incidence Xray diffraction (GIXD).
LCTp5 - 7

Comparison of Friction Characteristics on Alignment
Films with Frictional Force Microscopy
M. S. Kwak, H. R. Chung, H. M. Kwon, J. H. Kim,
D. K. Han, S. M. Lee, C. G. Lee, S. Y. Cha
LG Display, Korea

Using FFM, the friction surface characteristics between TN and VA
mode alignment films (AFs) were compared. The friction asymmetry
was appeared according to temperature conditions on TN mode, but not
on VA mode. The difference was explained by tilt angle uniformity anddensity of side chain AF leaning intermolecular repulsion.
LCTp5 - 8

Surface Crystallization of Rubbed Polyimide Film for
LC Alignment by Annealing
I. Hirosawa, T. Koganezawa, T. Sakai*, H. Ishii*
Japan Synchrotron Radiation Res. Inst., Japan*Nissan Chem. Ind., Japan

We investigated effect of annealing after rubbing on alignment film,
since annealing process is performed in actual LCD fabrication.
Enhancement of surface polymer crystallization occurred by annealing
by GIXD, and the initial orientation of surface polymers induced byrubbing affected on surface crystallization by annealing.

35

Thursday

December 4

LCTp5 - 9

Rubbing Alignment Using Pre-imidized Polyimide as
an Alignment Material
C. K. Ku*, M. J. Lee*,**, Y. R. Lin*, C. W. Kuo*, C. C. Liao**ITRI, Taiwan**Nat. Chaio Tung Univ., Taiwan

In this paper, a pre-imidized polyimide was applied for rubbingalignment material in order to lower the curing temperature. The LC
cells with alignment layers cured at 150°C have an excellent balance ofpretilt angle, VHR, RDC, threshold voltage and response time.
LCTp5 - 10L

Photoisomeriation Studies on Disc Shaped Azo
Dyes: Characteristic Properties and Applications
G. Hegde*,**, M. R. Lutfor***, V. Chigrinov*, H. S. Kwok**Hong Kong Univ. of S&T, Hong Kong**Gothenburg Univ., Sweden***

School of Sci. & Tech. Universiti Malaysia Sabah,
Malaysia

In this investigation, photoisomerization studies are done for discshaped azo dye mixed with liquid crystal. Study suggests that the
proposed dye can be implemented for storage devices since it exhibitshigh thermal back relaxation. This azo-dye is highly reversible and canpossibly implement for storage devices and security applications.
LCTp5 - 11L

Investigation of Photo Alignment Properties on New
Azo Dyes and Applications
G. Hegde*,**, T. Du*, V. Chigrinov*, H. S. Kwok**Hong Kong Univ. of S&T, Hong Kong**Gothenburg Univ., Sweden

Excellent photoalignment of different liquid crystals (LC) on the films ofcommercially available azo dyes is observed Investigation on
characteristic properties of order parameter, azimuthal and polaranchoring energy open up the wide path for utilizing commerciallyavailable dyes for different applications. Mechanism behind thephenomena is discussed elsewhere.

SID 2009
International Symposium, Seminar and Exhibition
May 31 – June 5, 2009
San Antonio, Texas, USA36

Thursday
LCTp5 - 12L

December 4
Biaxiality Effects in Kinetics of Photoinduced
Orientational Structures in Azo-Dye Films
A. Kiselev*, V. Chigrinov, H. Kwok, A. Murauski,
A. Muravsky
HKUST, Hong Kong
*Nat. Ac. of Scis. of Ukraine, Ukraine

New photosensitive materials for photo-aligning and photo-patterning ofpolarizers and phase retarders to produce efficient new liquid crystal
display prototypes were investigated. The photoaligning technology
enables us to obtain transflective displays, by putting a special
configuration of patterned LC alignment or patterned polymerizable
phase retarders on each pixel.
LCTp5 - 13L

The Main-Chain Effect on the Surface Anchoring in
Homeotropic Polyimide Having Long Alkyl-SideChain
J. H. Shin, J.-H. Seo, T.-H. Yoon, J. C. Kim
Pusan Nat. Univ., Korea

In VA cell, the long alkyl-side-chain of the homeotropic polyimide plays
more important role in alignment properties of LC molecules than its
main-chain. However, our experiment shows the main-chain is also
important in the near saturation field. The authors have studied thechange of surface anchoring according to rubbing strength.
LCTp5 - 14L

Tunable Liquid Crystal Pretilt Angles Generated by
Nanoparticles
H. H. Yu, S. C. Jeng*,**, C. Y. Yang***, Y. M. Shieh***,Y. H. Hung***, C. W. Kuo*, S. J. Hwang***Nat. Formosa Univ., Taiwan*Nat. Kaohsiung Univ. of Appl. Sciences, Taiwan**
ITRI, Taiwan***Nat. United Univ., Taiwan

A potential method possessing a capability of adjusting pretilt angle forliquid crystal alignment was proposed by doping polyhedral oligomericsilsesquioxane (POSS) nanoparticles of in the homogeneously- aligned
LC cells. With the different doped POSS concentration, the continuously
controllable LC pretilt angles can be achieved from 0° to 90°.
----- Lunch -----

37

Thursday

December 4

13:20 - 14:25

Snow Hall B

LCT4: LC Alignment Patterning
Chair:
Co-Chair:
LCT4 - 1:
13:20

M. Kimura, Nagaoka Univ. of Tech., Japan
I. Hirosawa, Japan Synchrotron Radiation Res. Inst.,
Japan
Invited LC Alignment on Patterned Structure
Fabricated by Laser Lithography
M. Ozaki*, Y. Miura*, C. H. Lee*, H. Yoshida*,
K. Tokuoka*, K. Tagashira*, Y. Miyake*,**, A. Fujii*,
Y. Shimizu***Osaka Univ., Japan**AIST, JapanLC alignment on the micro-structure which is fabricated through a twophoton excitation laser-lithography has been investigated. LC localalignment in a small area with an arbitrary shape is achieved. Columnar
LCs introduced in micro-structures is found to exhibit a planar alignment
with the columnar axis being perpendicular to the micro-grooves.
LCT4 - 2
13:45

Photo-Aligning and Photo-Patterning by
Photosensitive Azo-Dye Layers
V. G. Chigrinov, H. S. Kwok, H. Hasebe*, H. Takatsu*
Hong Kong Univ. of S&T, Hong Kong*
DIC, Japan

Kinetics of photoinduced ordering in azo-dye films is studied. The
principal extinction coefficients on the irradiation dose are obtained fromthe absorption-vs-incidence angle curves. The transient photoinduced
structures are found to be biaxial. The irradiation time vs the absorption
order parameters is interpreted by generalized diffusion model.
LCT4 - 3
14:05

Self-Organized Microwrinkles for LC Alignment
T. Ohzono, H. Monobe, Y. Shimizu
AIST, JapanThe alignments of nematic liquid crystalline (LC) molecules on selforganized microwrinkles are demonstrated. The LC alignment direction
corresponds to that of the microwrinkle grooves. The order parameter ofthe microwrinkle-induced LC alignment within the parallel cell iscomparable to that of the cell with mechanically rubbed surfaces.
LCT4 - 4

Withdrawn----- Break -----

38

Thursday

December 4

16:40 - 17:40

Snow Hall B

LCT5: Moving Picture Analysis
Chair:
Co-Chair:M. Ozaki, Osaka Univ., Japan
M. Inoue, Toyo, Japan

LCT5 - 1
16:40

Comparison of Measurement Methods for Motion
Blur
Y. Enami
Otsuka Elect., JapanTV samples were measured using a pursuit camera, a high-speed
camera, and a temporal response measurement system, which wehave developed. The respective measurement methods are comparedand the characteristics of the devices and problems of motion blur
computing methods are examined.
LCT5 - 2
17:00

Time Resolved Photometric and Colorimetric 2D
Measurements of both Dynamic and Static
Luminance and Colour Artifacts in FPD
J. J. Jensen, S. Kobayashi*, M. Inoue*,**, Y. Kaneko**
DELTA, Light & Optics, Denmark*Tokyo Univ. of Sci., Yamaguchi, Japan**Toyo, Japan

Report on time resolved colorimetric measurements of the luminanceand colour variation occurring during the frame period of FPD’s. Several
measurements are performed. For dynamic artefacts, a pursuit eye
tracking algorithm is applied. This robust data will be basis of a future
metric for quantifying various kinds of colour artifacts.
LCT5 - 3
17:20

Analysis of Image Distortion Phenomena Induced byExternal Force on LCD
J.-Y. Ahn, H. K. Hong, H. Jung, H.-I. Baek, M. Lim,
H.-H. Shin
LG Display, Korea

Spontaneous light leakage at low gray levels and image deformation athigh gray levels induced by the external force are observed for LCDs. In
this study, we report that on what condition and how such thephenomena are observed and explain their mechanism according to the
LC alignment.

Author Interviews
18:00 – 19:00

39

Friday

December 5
Friday, December 5

9:00 - 10:30

Snow Hall B

LCT6: 15th Anniversary: Progress of LC Materials
Chair:
Co-Chair:
LCT6 - 1:
9:00

L. C. Chien, Kent State Univ., USA
M. Suzuki, Merck, Japan
Invited Innovations in the LC Material Developments
and the Prospects towards the Future
Y. Gotoh, H. Fujita
Chisso, Japan

Liquid crystal (LC) material is an important component that will have thegreatest effect on the display properties of all LCD components. Chisso
developed the first successful LC material to use fluorine atoms as a
substituent during its long years of pursuit in the development of LC
materials.
LCT6 - 2:
9:30

Invited Syntheses and Physical Properties of New
LCs with Negative Dielectric Anisotropy
H. Takatsu, S. Kawakami, G. Sudo, T. Kusumoto,Y. Nagashima, M. Negishi, T. Matsumoto
DIC, Japan

Fluorinated liquid crystals of fused ring systems with positive dielectricanisotropy are reviewed. And new liquid crystalline 1,7,8trifluoronaphthalenes and 7,8-difluorochromans with negative dielectricanisotropy are designed and synthesized. The relationship between
dielectric anisotropy and chemical structure is discussed. Some liquid
crystal mixtures for VA LCD are prepared.
LCT6 - 3:
10:00

Invited Advanced LC Materials for Fast Switching
Display Modes
A. Götz, M. Klasen-Memmer, M. Bremer, A. Taugerbeck,
K. Tarumi, D. Pauluth
Merck KGaA, Germany

Continuous development of new liquid crystal (LC) materials, especiallyfor fast switching times, has been one of the major factors for the
success of LC Displays. New, fast switching display modes including
appropriate and innovative LC materials for the next display generation
will be discussed.
----- Break -----

40

Friday

December 5

10:40 - 12:40

Snow Hall B

LCT7: 15th Anniversary: State-of-the-Art LCD Modes
Chair:
Co-Chair:
LCT7 - 1:
10:40

H. Okada, Univ. of Toyama, Japan
T. Nose, Akita Pref. Univ., Japan
Invited Progress of the High Performance LCDs
T. Uchida, T. Ishinabe
Tohoku Univ., Japan

Optical performance of LCDs has been radically improved as evidenced
by the increasing application of LCDs in high-quality televisions. This
paper describes the concept of optical compensation and thefundamental characteristics of the optical properties for various LCD
modes.
LCT7 - 2:
11:10

Invited VA Mode: Promising Candidate for Upcoming
New Imaging Era
K. Okamoto
Sharp, JapanTen years history from firstly commercialized MVA mode display has
been reviewed. Potential of the VA mode will be discussed based on the
recent development. VA mode LCDs derived from conventional MVA
mode will be introduced and potential of the display performance forupcoming new imaging era will be discussed.
LCT7 - 3:
11:40

Invited The Latest IPS-Pro Technology for LCD-TVs
K. Ono, I. Hiyama
Hitachi Displays, JapanThe IPS LC-mode made its debut with an excellent wide viewing angle
performance in the latter half of the1990’s. Its performance has been
drastically improved, and in particular, IPS-Pro technology has beenused to improve the transmittance and contrast ratio. The technology
researchers are aiming at reducing power consumption.
LCT7 - 4:
12:10

Invited Development of Optically Compensated Bend
Mode LCDs
H. Wakemoto, K. Nakao, K. Nishiyama, A. Takimoto
Toshiba Matsushita Display Tech., Japan

We have put OCB mode LCDs to practical use by developing theformation technology of bend alignment. We have improved the moving
picture quality by combining black insertion with backlight blinking. A
MPRT value that surpassed CRT was achieved in OCB-III. OCB-LCDs
began to be applied to the advanced products.
----- Lunch -----

41

Friday

December 5

13:40 - 14:45

Snow Hall B

LCT8: Novel LCD Modes
Chair:
Co-Chair:
LCT8 - 1:
13:40

T. Uchida, Tohoku Univ., Japan
H. Wakemoto, Toshiba Matsushita Display Tech., Japan
Invited Fundamental Performance of PSS-LCDs
A. Mochizuki
Nano Loa USA, USA

A new type of liquid crystal display drive mode based on smectic liquid
crystals is introduced. This new mode enables an extremely fast opticalresponse with wide viewing angle in the time domain by sharing most of
intrinsic display platform such as a TFT array, drive electronics and mfg
process.
LCT8 - 2
14:05

Dual Mode LCDs with Multistable and Dynamic
Modes
C.-Y. Huang, C.-C. Lai, Y.-H. Tseng, Y.-T. Yang,
C.-J. Tien, K.-Y. Lo*
Nat. Changhua Univ. of Education, Taiwan*Nat. Chiayi Univ., Taiwan

We demonstrate a silica-nanoparticle-doped HAN device with two
operation modes. Under AC excitation, the interfacial polarization effectbetween the LCs and nanoparticles gives the cell a fast response time
for the dynamic mode. After DC excitation, the nanoparticles stabilize
the homeotropically aligned LCs, giving the cell multistable switching
characteristics.
LCT8 - 3
14:25

An Anisotropic Polymer-Networked Vertical-Aligned
LC Cell with Fast Response
K.-H. Kim, J.-I. Baek, J. C. Kim, T.-H. Yoon
Pusan Nat. Univ., Korea

We report electro-optic response of anisotropic polymer-networked VALC cell. Optical bouncing in the turn-on process of an overdriven VA-LC
cell was eliminated and the turn-off time could be reduced by up to 85%. We studied the transmittance, the operating voltage, and the
response time as functions of polymer concentration.
----- Break -----

42

Friday

December 5

15:00 - 16:25

Snow Hall B

LCT9: High Performance LCDs (1)Chair:
Co-Chair:
LCT9 - 1:
15:00

A. Mochizuki, Nano Loa USA, USA
H. Fujikake, NHK, Japan
Invited Developments of FLCDs and Applications
Utilizing Memory Effect
H. Amakawa, S. Kondoh
Citizen Holdings, Japan

We have succeeded in commercialization of ferroelectric liquid crystal
device for watch application using memory effect. In this paper, we will
introduce our approach to achieve stable memory states, with SiOalignment, and discuss some related technical points. Finally we willshow prototype panels in addition to the watch product.
LCT9 - 2:
15:25

Invited V-Shaped E-O Properties of Polymer
Stabilized FLCD Free from Conventional Surface
Stabilization: Advanced Color Sequential LCDs
T. Fujisawa, K. Hatsusaka, K. Maruyama, I. Nishiyama,
K. Takeuchi, H. Takatsu, S. Kobayashi*
DIC, Japan*Tokyo Univ. of Sci., Yamaguchi, Japan

By an advanced polymer stabilization technology, we succeeded infabricating novel Polymer-stabilized FLCDs exhibiting V shaped
switching (PSV-FLCDs) with a fast response and with a free from theconventional surface stabilization. We also achieve the opticalthroughput from 40% level to 70% and to reduce the operation voltage.
LCT9 - 3
15:50

Low Driving Voltage, Molecular Arrangement andStability of Reverse TN ModeK. Takatoh, M. Akimoto, H. Kaneko, K. Kawashima,
S. Kobayashi
Tokyo Univ. of Sci., Yamaguchi, Japan

Reverse TN (RTN) mode with LC material of opposite chiral direction
shows drastically low driving voltage. The mode shows characteristic
molecular arrangement of high polar angle, which induces uniqueproperties of driving voltage, viewing angle and response time and soon.

43Friday
LCT9 - 4L
16:10

December 5
Improvement of the Long-term Image Sticking in an
IPS-LCD by Development of LCD Cell Materials
H. J. Ahn, H. S. Hwang, D. -G. Kim, W. -K. Lee,J. W. Woo, W. S. Kim
LG Display, Korea

To fast release the residual DC voltage, we controlled the electricalproperties of LCD materials. We also propose the simple measurement
parameters which can quantitavely evaluate the image sticking
phenomenon. When the resistivities of materials become lower thancurrent, the accumulation and the extinction of residual DC voltage is
improved.
----- Break -----

16:40 - 17:40

Snow Hall B

LCT10: High Performance LCDs (2)Chair:
Co-Chair:

K. Ishikawa, Tokyo Inst. of Tech., Japan
H. Amakawa, Citizen Holdings, Japan

LCT10 - 1
16:40

Novel Advanced MVA Technology for Mobile
Application
Y.-P. Kuo, S.-C. F. Jiang, L.-P. Liu, C.-H. Lin, C.-C. Lin,
C.-J. Hu, W.-M. Huang
AU Optronics, Taiwan

We have developed a novel advanced multi-domains vertical alignment(AMVA-mobile) LCD for mobile application. AMVA-mobile technology is
protrusion -less structure and specific pixel structure. We made 2.4 inch
VGA (640*480) panel and we got better optical performance thanconventional MVA, including transmittance, contrast ratio, responsetime and touch mura free.
LCT10 - 2
17:00

Optimum Design Parameters of Transflective MVA
LCD
K. H. Huang, Y. Y. Huang, C. C. Lin, C. R. Lee, H. T. Yu
Chunghwa Picture Tubes, Taiwan

The optimum controlling parameters for designing a transflective multidomain vertical alignment liquid crystal display (TR-VA LCD) have been
investigated. After deliberately considering these parameters, forinstance, cell gap, wavelength-dependent indium-tin-oxide (ITO)
thickness, the final optical performances are elevated 50% in
luminance, 20% in contrast ratio and 33% in reflectivity, respectively.

44

Friday
LCT10 - 3
17:20

December 5
Advanced Transflective MVA LCD with Micro Bump
Technology
S. W. Huang, X. H. Su, X. L. Zhou, Z. W. Chen,
S. L. Yang, T. C. Yang, C. J. Hu, W. M. Huang
AU Optronics, Taiwan

We have successfully improved the ATR-MVA LCD by using microbump technology which can achieve 1.25% with 7% reflective aperture
ratios on AUO’s 4.0 inches LCD. Furthermore, we improved thereflectance of micro bump by increasing bump density and wellcontrolling bump profile. We expect the reflectance can further enhance
34%.

Author Interviews
17:40 – 18:40

Supporting Organization:
The Japanese Liquid Crystal Society (JLCS)EVENING GET-TOGETHERWITH WINE
Tuesday, December 2, 2008
18:00–20:00
Room “Houou” (30F)
Hotel Nikko Niigata(Sponsored by Merck Ltd., Japan)
See page 9 for details
45

Wednesday

December 3

Workshop on Active Matrix Displays
Wednesday, December 3
13:20 - 14:40

Snow Hall A

AMD1: Organic TFT
Chair:
Co-Chair:AMD1 - 1:
13:20

M. Kitamura, Univ. of Tokyo, JapanY. Fujisaki, NHK, Japan
Invited Organic Semiconductors for Stable, HighPerformance Thin-Film Transistors
K. Takimiya, E. Miyazaki, T. Yamamoto
Hiroshima Univ., Japan

Novel sulfur-containing fused-aromatics were developed as stable,
high-performance p-channel organic semiconductors for OTFT
applications. In our contribution, the molecular design strategy,
synthesis, and stability of new molecular semiconductors, and the FET
characteristics of the devices will be presented.
AMD1 - 2
13:45

Self-Aligned Thin Film Transistors with Ink-Jet
Printing Process
K. T. Lin, C. F. Sung, W. C. Chen, M. H. Yang, Y. Z. Lee
ITRI, Taiwan

We report results of organic thin film transistor with ink-jet printing
process. A silver layer, as the shadow mask to define source-drain, isdeposited on the spin-coated photoresist layer. After developing andcuring the photoresist, gate, dielectric and semiconductor layers are
ink-jet printed and self-aligned to the channel.
AMD1 - 3
14:05

Evaluation of Trap Density in Organic Transistors by
Applying Drain Pulse Voltage
K. Nishita, H. Yajima, S. Naka, H. Okada
Univ. of Toyama, Japan

Measurement method of trapped charge for an organic FET by applying
drain pulse voltage has investigated. Trapped charge could be
estimated by calculating difference between ideal and experimental
current. Herewith, trapped carrier density was evaluated between 1.1
and 5.8 × 1012 cm-2eV-1 in a pentacene OFET with Ta2O5/ perfluororesin insulator.

46

Wednesday
AMD1 - 4L
14:25

December 3
Printed OTFTs on Plastic Substrate Toward theRealization of Flexible Display
K. Matsuoka**,*, O. Kina***,*, M. Koutake****,*,
K. Noda*****,*, H. Yonehara****, K. Yase*******Jpan Chem. Innovation Inst., Japan**

Konica Minolta Tech. Ctr., Japan***Toppan Printing, Japan****DIC, Japan*****

ADEKA, Japan******Photonics Res. Inst. AIST, Japan

We have succeeded in driving a polymer network liquid crystal display(PNLCD) by using an organic thin-film transistor (OTFT) array obtainedby the microcontact printing (µCP) method. By optimizing the fabrication
condition, a pattern of line/space of 3µm/3µm on a 150mm-squared
plastic substrate was achieved.
----- Break -----

15:00 - 16:30

Snow Hall A

AMD2: LCD Applications
Chair:
Co-Chair:AMD2 - 1:
15:00

M. Kimura, Ryukoku Univ., Japan
S. Hirota, Hitachi, Japan
Invited Essential Technologies for Next Generation
LCD-TVs
Y. Yoshida, S. Imai, M. Teragawa
Sharp, Japan

In this paper, we will describe recent signal processing technologies of
LCD-TV, such as “wider color gamut display technology”, “bit-depth
extension technology” and “double frame rate technology”. Then we
discuss software technology of “Legacy Re-mastering technology” that
controls system parameters of every technical component agilely
according to content.
AMD2 - 2
15:25

A LCD Novel Design for High Contrast Ratio
W. H. Lu, C. W. Chen, M. F. Tien, P. Su, T. J. Chang,
W. L. Liau, A. Lien
AU Optronics, Taiwan

We succeeded to develop an approach by using new material, named
gray bump in stead of current bump material to achieve high contrast
ratio (CR) of liquid crystal display (LCD) at normal direction for MVA
mode. It also reduces the oblique light leakage of dark state andimproves the viewing angle.

47

Wed./Thu.
AMD2 - 3:
15:45

December 3/4
Invited Multi-Bit Memory in Pixel Circuit for Ultra Low
Power LTPS TFT-LCD
K. Yamashita, T.-H. Wu, Y. Matsui, M.-C. Lee, S. Kawata,
M. Yoshiga, N. Sumi, M. Shibazaki, Y.-C. Tsai, K. SanoTPO Displays, Taiwan

An ultra low power 4-bit multi-bit memory in pixel (MIP) circuit was
integrated into a 1.4"qQVGA reflective LTPS TFT-LCD. The power
consumption of 40uW was measured. This display reproduced 16 graylevels by combined 2 sub pixels and 4 gray voltage levels. Its open
aperture was 86%.
AMD2 - 4
16:10

Novel Half-Triple-Rate-Driving Method for High
Resolution TFT-LCDs with an Integrated a-Si Gate
DriverC. I. Ryoo, Y. H. Jang, B. Kim, H. Y. Kim, S. C. Choi,
H. N. Cho, W. S. Choi, N. W. Cho, T. W. Moon,
K.-S. Park, S. Y. Yoon, C.-D. Kim, I. B. Kang
LG Display, Korea

We have developed a novel half-triple-rate driving (HTRD) method for
TFT-LCDs with an integrated a-Si TFT gate driver, where 6 sub-pixels
are driven with 3 gate lines and 2 data lines. The data is driven by 3-to2 multiplexing with one and a half times higher scan frequency.
----- Break ----Author Interviews
18:00 – 19:00

Thursday, December 4
10:40 - 12:05

Snow Hall B

AMD3/OLED4: AM-OLED
Chair:
Co-Chair:S. Horita, JAIST, Japan
K. Takatori, NEC LCD Techs., Japan

AMD3/
Invited Amorphous Oxide TFT Backplanes for Large
OLED4 - 1: Size AMOLED Displays
10:40
Y. G. Mo, J. K. Jeong, H. D. Kim, H. K. Chung
Samsung Mobile Display, Korea
Amorphous oxide TFT array was fabricated and a bottom-emitting 12.1
inch WXGA AMOLED display was successfully driven by it. The TFT
array exhibited the field-effect mobility of 18 cm2/Vs, threshold voltageof 1.8 V, on/off ratio of 109, and subthreshold gate swing of 0.28 V/dec.

48

Thursday

December 4

AMD3/
Invited Issues of a-Si:H TFTs & LTPS TFTs for an
OLED4 - 2: AMOLED Backplane
11:05
M.-K. Han, S.-G. Park, H.-S. ShinSeoul Nat. Univ., Korea
Various thin film transistors (TFT) such as hydrogenated amorphoussilicon TFT (a-Si:H TFT), low temperature poly silicon TFT (LTPS TFT)
and solid phase crystallized silicon TFT (SPC-TFT) have gained
considerable attentions as a pixel element of AMOLED display. We
have discussed many issues on each TFT for AMOLED display.
AMD3/
OLED4 - 3
11:30

High Flexibility of AMOLED Displays on Colorless PI
Substrate
Y. S. Huang, H. C. Cheng, C.-J. Liu, C.-W. Lin, K.-Y. Ho,
C.-H. Cheng, S. Y. Peng, P. H. Wang, Y.-P. Chen,
M.-H. Lee*, H.-C. Lin, B.-C. Kung, C.-J. Tsai, Y.-T. Chen,
P.-F. Lee, G.-R. Hu, J.-J. Huang, C.-C. Lee
ITRI, Taiwan*Nat. Taiwan Normal Univ., Taiwan

We have demonstrated the 4.1-inch QVGA flexible AMOLED withbottom emission type, and the display was fabricated on 30um-thickcolorless PI substrate. The a-Si:H TFT exhibited the field effect mobilityof 0.43cm2/V-s, the Vth of 2.8V, the S.S. of 0.6V/decade, and the Ion/Ioff
ratio is larger than 106.
AMD3/
OLED4 - 4L
11:50

Development of Stable, High-Performing Organic
Semiconductors and TFTs
G. Lloyd, P. Miskiewicz, M. Carrasco-Orozco, S. Tierney,
J. Canisius, M. Heckmeier, D. Mueller, J. Nakanowatari*
Merck Chems., UK*
Merck, Japan

Stable materials with high carrier mobility values up to 4cm2/Vs havebeen developed and formulated to maximize performance, enhancestability and simplify processing conditions. We demonstrate highly
stable organic thin film transistors and highlight the importance of thedielectric in enhancing the performance as well as the stability.
----- Lunch -----

49

Thursday

December 4

13:20 - 16:20

Exhibition Hall B

Poster AMDp1: Organic TFT
AMDp1 - 1

Improved Stability of Organic Thin Film Transistors
for OLED Backplane Application
J.-Y. Yan, L.-H. Chen, J.-L. Liao, K.-P. Liao, M.-R. Lin,
T.-W. Lee, S.-T. Yeh, K.-Y. Cheng, Y.-Y. Wu, C.-H. Yu,
Y.-Y. Lee, J.-C. Ho
ITRI, Taiwan

In this article, we study the stability of organic thin film transistors(OTFTs) by different fabrication process and electrical stress conditions.
The results indicate that the stability is strongly influenced by the gate
and drain voltage. After optimize the fabrication process, the lifetime of
OTFTs can be achieved to 107s.
AMDp1 - 2

Post-Annealing Effects of Al2O3 Gate Dielectric
Fabricated with E-Beam Process in Organic ThinFilm Transistors
G. W. Hyung, K. M. Choi*, J. R. Koo*, J. H. Kim,
S. J. Kwon*, Y. K. Kim
Hongik Univ., Korea*Kyungwon Univ., Korea

We fabricated a pentacene thin-film transistor with an Al2O3 layer using
e-beam process with post-annealing and obtained a device with better
electrical characteristics at low operating voltages. device was found tohave a field-effect mobility of 0.27cm2/Vs, a threshold voltage of -1.2 V,
and an Ion/off of 2 × 105.
13:20 - 16:20

Exhibition Hall B

Poster AMDp2: LCD Applications
AMDp2 - 1

Low Power Consumption IPS/FFS TFT-LCD Structure
G. L. Zhao, C. T. Liao, Y. W. Chiu, T. C. Chung, T. S. Jen
InfoVision OptoElect., China
JiangSu (IVO) Flat Panel Display Tech. Res. Inst., China

A novel IPS/FFS TFT-LCD structure with low power consumption was
proposed. This structure was composed of two level Vcom and zigzaginversion pixel layout arrangement. In this way, we can reduce theswimming of output signal voltage in driver ICs and get 25% powersaving in check sub-pixel pattern.

50Thursday

December 4

AMDp2 - 2

A Simple Process to Manufacture a-Si TFT LCDs withHigh Aperture Ratio and Low Power Consumption
H. L. Lin, C. H. Lin, C. J. Hu, W. M. Huang
AU Optronics, Taiwan

Traditionally, LCD panels are manufactured by LTPS due totransmittance, power consumption and border width. We have designed
a 2.4" WQVGA a-Si panel. It can not only reach high transmittance andslim borders, but also simplify process steps compared to LTPS. Then,the yield and throughput will improve when manufacturing.
AMDp2 - 3

Low Power Consumption for FHD TFT-LCDs with 2ZInversion Pixel Structures
C. C. Yeh, L. S. Lin, E. T. Kuo, S. C. Lin, K. C. Lee,C. H. Yu
HannStar Display, Taiwan

LCDs need the low power consumption feature with high image quality.
We present 2Z-inversion pixel structures, which implemented 1+2V1H
twin-dot inversion on TFT with the column-inversion driving scheme toachieve both requirements. A 28inch WUXGA panel with over 20%
power saving could be obtained as traditional dot inversion driving
scheme.
AMDp2 - 4

Analysis of Horizontal Crosstalk for HFFS Mode TFTLCDs
Y.-C. Chang, S. Yan, T.-H. Hsieh, C. Yang, J.-P. Pang
InnoLux Display, Taiwan

The structure of HFFS pixel is currently applied in TFT-LCDs, while thisstructure suffers from serious horizontal crosstalk when operated at
higher frame rate. The focus on high frame rate horizontal crosstalk has
been investigated and the alleviation strategy for the reduction ofcrosstalk is shown in this study.
AMDp2 - 5

Novel Method for DC Offset Measurement andCompensation to Improve the Image-Sticking of TFTLCDs
Y. B. Qiao, L. B. Mao, S. N. Zhang, S. J. Kong,
T. C. Chung, Y. W. Chiu, C. T. Liao, T. S. Jen
InfoVision OptoElect., China
JiangSu (IVO) Flat Panel Display Tech. Res. Inst., China

We developed a Fast Fourier Transform (FFT) based DC offset-voltage
measurement system to obtain the internal DC offset voltage in graylevels of L0, L128 and L252 of TFT-LCDs. Accordingly, we cancompensate the signal voltages to improve the image-sticking
performance for TFT-LCDs.

51

Thursday
AMDp2 - 6

December 4
3-in. WVGA LTPS TFT-LCD with Narrow Border
DesignC. Y. Hsu, C. J. Shih, C. C. Kuo, C. P. Ku, C. K. Yu,
Y. F. Liao, M. S. Wu
Chunghwa Picture Tubes, Taiwan

A 3" WVGA (800x480) LTPS (Low Temperature Poly Silicon) TFT LCD
with narrow border has been presented using integrated gate drivercircuit and multiplexer circuit. We proposed a architecture to design
LCD panel with high resolution (313 ppi) and narrow border (1.1mm) for
high-end application, like cell-phone for mobile TV.
AMDp2 - 7

Application of Laser Direct Writing to Organic-Based
Passivation a-Si:H TFT-LCD
K.-H. Su, Z.-N. Chen, F.-W. Chang, Y.-C. Lai,
M.-C. Wang, S.-W. Liang
Taiwan TFT LCD Assn., Taiwan

Laser direct writing technology in TFT panel fabrication has been
carried out by KrF excimer laser. Organic photoresist material with
dielectric constant = 3.83 is served as dielectric passivation layer in our
device. From TFT device performance and functional TFT panel
demonstration, it’s a promising method to replace photolithography.
13:20 - 16:20

Exhibition Hall B

Poster AMDp3: AM-OLED
AMDp3 - 1

Power Decoupled Driving Method for Large Size
AMOLED Displays
S. M. Choi, C. G. Kang, E. J. Lee, H. G. Seo, D. H. Ryu,
K. N. Kim, H. D. Kim
Samsung Mobile Display, Korea

AMOLED is current driven device. This current induces the voltage drop
and a main cause of poor uniformity for large size displays. We propose
a new design method to solve that issue. We confirmed that it takes
effect to improve uniformity by 11.9% than that of conventional method.

SID 2009
International Symposium, Seminar and Exhibition
May 31 – June 5, 2009
San Antonio, Texas, USA52

Thursday

December 4

13:20 - 16:20

Exhibition Hall B

Poster AMDp4: Poly-Si TFT
AMDp4 - 1

Dehydrogenation and Lateral Crystallization of
Nanocrystalline Silicon Film Using Solid-State
Continuous-Wave Green Laser
T. Sato, W. Umezu, K. Yamamoto*, A. Hara, K. Kitahara*
Tohoku-Gakuin Univ., Japan*Shimane Univ., Japan

By optimizing the dehydrogenation of an nc-Si film using a DPSS CW
green laser, we succeeded in fabricating a large lateral poly-Si film
without employing thermal dehydrogenation. The result leads to themonolithic integration of TG poly-Si TFTs and TG nc-Si TFTs on thesame substrate.
AMDp4 - 2

Effect of Y2O3 Content in a YSZ Seed Layer on
Crystallization of a Low-Temperature-Deposited Si
Film
S. Hana, S. Horita
JAIST, JapanOn a glass substrate covered with HF-etched YSZ layer, after ethanol
rinsing, a crystallized Si film was obtained at ≤430°C. The Y2O3 content
of the YSZ gave a strong effect on the surface chemical composition
after the HF-etching, which subsequently determines the Si film’s
degree of crystallization.
AMDp4 - 3

Influence of Laser Plasma Soft X-Ray Irradiation on
Nucleation of Crystal Grain in a-Si Film
Y. Takanashi, K. Masuda, A. Heya, S. Amano,
S. Miyamoto, N. Matsuo, T. Mochizuki
Univ. of Hyogo, Japan

We investigated the influence of Laser Plasma soft X-ray(LPX)
irradiation on a-Si film structure for low-temperature crystallization. The
optical transmittance of a-Si film was increased by LPX irradiation
around 500 nm. This phenomenon relates to movement of Si atom in aSi film.

53Thursday

December 4

AMDp4 - 4

Suppression of Short Channel Effect of Thin-Film
Transistor by Very Thin SiNx Film Formed at Source
and Drain Region
T. Kobayashi, K. Ohkura*, N. Matsuo, A. Fukushima,
A. Heya, S. Yokoyama*
Univ. of Hyogo, Japan*Hiroshima Univ., Japan

The influence of the thin SiNx film formed at the interface between thepoly-Si source/drain and Al electrode on the short channel effect of thescaled down polysilicon thin-film transistor (TFT) is examined. The
hump effect disappears and the subthreshold swing decreases for the
TFT with the SiNx film.
AMDp4 - 5

Performance Enhancement of Multi-Gate Poly-Si
TFTs with Gate-Overlap Structure
Y. C. Hsu, C. C. Shih, J. S. Chen, W. M. Huang
AU Optronics, Taiwan

We proposed a new multi-gate poly-Si TFTs design for LTPS panel,
which exhibits better essential characteristics on on-current, mobility,(photo) leakage current and trap-state density. Reliability was also
improved in this structure.
AMDp4 - 6

Potential Barrier and Carrier Transport at Grain
Boundary in Poly-Si Thin-Film
M. Kimura*,***Ryukoku Univ., Japan**

Thin Film Materials & Devices Meeting, Japan

Potential barriers and carrier transport at grain boundaries in poly-Si
thin-films are analytically calculated in consideration of energy
distributions of trap densities. Dependences on the trap densities anddopant densities are shown. Potential barriers and carrier transport
calculated using this analytical method are consistent with those
calculated using device simulation.
AMDp4 - 7

Complete Extraction of Trap Density in Poly-Si TFTs
T. Yoshino, K. Harada, T. Yasuhara, M. Kimura
Ryukoku Univ., Japan

We have developed an extraction technique of the trap densities atfront- and back-interfaces and grain boundaries using C-V and I-Vcharacteristics and 2-D device simulation. The actual trap densities
were separated and extracted for a poly-Si TFT fabricated using ELC
and oxygen-plasma treatment for the first time.

54

Thursday
AMDp4 - 8

December 4
A New NBTI Characterization Method on
Polycrystalline Silicon Thin-Film Transistors
H.-C. Sun, C.-F. Huang, Y.-T. Chen, C. W. Liu, Y.-C. Hsu*,
C.-C. Shih*, J.-S. Chen*
Nat. Taiwan Univ., Taiwan*
AU Optronics, Taiwan

Three negative bias temperature instability characterization methods
are investigated and compared on p-channel polycrystalline silicon thinfilm transistors. An improved Delay-ID,lin method with new waveform is
proposed to extract threshold voltage shift and mobility degradation
separately. The fast, accurate method is beneficial for the reliability
analyses for the display technologies.
AMDp4 - 9

The Characteristics of the Asymmetric-Offset
Structure N-Type Polycrystalline Thin-Film
Transistors Fabricated by Alternating Magnetic-FieldEnhanced Rapid Thermal Annealing
W.-K. Lee*,**, S.-G. Park*, D.-W. Kang*, B.-S. Jeong**,
J. Choi**, C.-W. Kim**, M.-K. Han*
*Seoul Nat. Univ., Korea**Samsung Elect., Korea

We fabricated asymmetric-offset structure poly-Si TFTs which reduced
the leakage current considerably and have remarkable reliabilities. The
AOS TFTs can be made without additional doping processes. The large
drain-side offset and small source-side offset could greatly suppress theleakage current without sacrifice the ON-current with increasing VDS
and decreasing VGS.
13:20 - 16:20

Exhibition Hall B

Poster AMDp5: Oxide TFT
AMDp5 - 1

Colloidal ZnO Nanocrystals-Based Transparent
Field-Effect Transistors
J. J. Lee, G. W. Hyung, J. S. Lee, Y. K. Kim, H. Yang
Hongik Univ., Korea

Colloidal ZnO nanocrystals were used for fabrication of transparent
TFTs. ZnO nanocrystals blended with PVP were spin-cast.
Transmittance of the device reached ~80% in the visible region. The
device exhibited the drain current with on/off ratio >105, thresholdvoltage of -3 V, and field-effect mobility of 0.2 cm2/V⋅s.

55

Thursday
AMDp5 - 2

December 4
A Study of Solution Based In-Ga-Zn-Oxide NanoParticle Thin Film Transistor Devices
Y. H. Yang, S. S. Yang, C. Y. Kao, K. S. Chou
Nat. Tsing Hua Univ., Taiwan

We introduce a simple and low cost method to synthesize a transparent
In-Ga-Zn-Oxide (IGZO) nano-particle solution. A thin film transistor withthe active layer of IGZO is fabricated by the inkjet printing process. The
electrical properties of the element are measured and presented.
13:20 - 16:20

Exhibition Hall B

Poster AMDp6: Amorphous Si TFT
AMDp6 - 1

Stability of Low Temperature HydrogenatedAmorphous Silicon Thin Film Transistors on
Generation II Size Colorless Polyimide Substrate
J. J. Huang, B. C. Kung, G. R. Hu, Y. P. Chen, H. C. Lin,C. J. Tsai, C. J. Liu, K. Y. Ho, P. F. Lee, C. H. Cheng,
Y. S. Huang, C. C. Lee
ITRI, Taiwan

The a-Si:H TFTs were fabricated on colorless polyimide (PI) at 160°C.
Time and temperature dependences of a-Si:H TFT of the ∆Vth underelectrical stress were investigates in this article. We found that thedegradation of device characteristic in parallel channel direction
bending is smaller than in perpendicular channel direction bending.
AMDp6 - 2

The Self-Heating Behavior in a-Si:H Thin Film
Transistors Liquid Crystal Display under Transient
Current Measurement
C. Y. Liang*,**, C. Y. Wu**, H. L. Chen**, F. S. Yeh*,
T. C. Chang***,*****Nat. Tsing Hua Univ., Taiwan**

AU Optronics, Taiwan***Nat. Sun Yat-Sen Univ., Taiwan****Ctr. for NanoSci. & Nat. Sun Yat-Sen Univ., Taiwan

A system using micro-second pulses, instead of DC measurement, isnecessary for rapid operated devices in circuit. Through transient
measurement, the real output characteristics of large size a-Si:H TFTs
could be obtained without the additional self-heating effect. Moreover,the more correct circuit power consumption can be achieved bytransient measurement.

56

Thursday
AMDp6 - 3

December 4
Effect of Mechanical and Electrical Stresses on the
Performance of an a-Si:H TFT on Flexible Tungsten
Foil
W. G. Lee, J. H. Cheon, T. H. Lim, J. Jang, P. Kumar*
Kyung Hee Univ., Korea*
H. C. Starck, USA

We studied the effect of mechanical and electrical stresses ofhydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) on
flexible tungsten foil. The individual transistors were strained by inward(compression) or outward (tension) cylindrical bending with parallel tothe source-drain current path.
AMDp6 - 4

The Influence of Self-Heating Effect on the Electrical
Instability of Hydrogenated Amorphous Silicon TFTs
C. C. Chiu, C. C. Shih, J. S. Chen, W. M. Huang
AU Optronics, Taiwan

We had investigated the instability of a-Si:H TFTs which channel width
ranges from 30 µm to 6000 µm. It was found that applied high voltage
on the drain electrode induced serious VT shift in large channel width
TFTs. This phenomenon is ascribed to self-heating induced VT shifteffect.
AMDp6 - 5

Stability Influence with Various Back-Channel Etch
Type of a-Si:H TFT
C.-S. Wei, P. M. Chen, Y.-S. Lee, T.-Y. Peng, M.-S. Chen,
W.-M. Huang
AU Optronics, Taiwan

The various back-channel etch type of RIE, ICP and PE mode
influenced on the ON current and stability have been investigated.
Channel etch type of PE mode is the best method for highly stability, ON
current, field effect mobility, and threshold voltage.
AMDp6 - 6

Energy Spectral Characteristics of Various
Backlights in Terms of Photocurrent of a-Si:H Thin
Film Transistor
K. M. Choi, S. J. Kwon, E. S. Cho
Kyungwon Univ., Korea

Photo-leakage characteristics of hydrogenated amorphous silicon (aSi:H) thin film transistor (TFT) were obtained for the illuminations fromvarious backlight sources and the results were analyzed by using thespectral characteristics and their conversions to photon energy
spectrums of the different backlights. From the analysis, it was possible
to conclude the converted photon energies are proportional to thephoto-leakage currents and the absorption of the illuminated light to aSi:H layer and the generation of electron-hole pairs are mainly carriedout at the wavelength less than 500 nm.

57Thursday

December 4

AMDp6 - 7

The Effect of Light under Electrcal Bias Stresses on
Amorphous Silicon Thin Film Transistors as Photo
Sensor
T.-J. Ha, H.-S. Park, S.-H. Kuk, D.-W. Kang, M.-K. Han
Seoul Nat. Univ., Korea

We analyzed the effect of light under electrical bias stresses on a-Si
TFTs as photo sensors. The instability caused by electrical gate bias
stresses with light illumination was more enhanced than that without
light illumination. The results are due to the increase of carrier density
caused by light illumination.
13:20 - 16:20

Exhibition Hall B

Poster AMDp7: Late News
AMDp7 - 1L

Characterization of Poly-Si TFT at Temperatures from
1.5 K to 300 K
T. Serikawa
Osaka Univ., Japan

Poly-Si TFTs were measured in a wide temperature range to clarify
poly-Si film property. Measurements at temperature lower than 10 K
showed that conduction mechanism obeys interactions between
shallow-level and conduction band. This is caused from that grainboundaries with very low dangling-bond density are formed in the polySi film.
AMDp7 - 2L

High Field-Effect Mobility Pentacene Thin-Film
Transistors with Organic and Inorganic Hybrid
Dielectric
M. H. Chung, J. H. Kwon, S. I. Shin, J. Choi, K. H. Cho,
S. Nahm, B. K. Ju
Korea Univ., Korea

We fabricated pentacene thin-film transistors (TFTs) with organic andinorganic hybrid gate dielectric consisting of Bi5Nb3O15 (B5N3) andcross-linked poly(4-vinylphenol) (PVP). We obtained excellent electricalcharacteristics, including field-effect mobility (µ) of 1.37 cm2/V⋅s, current
on/off ratio of ~105, and subthreshold slope (SS) of 2.16 V/dec.
AMDp7 - 3L

Decoder Type a-Si:H Gate DriverN. H. Jeong, Y. T. Chun*, J. W. Kim*, B. S. Bae
Hoseo Univ., Korea*Samsung Advanced Inst. of Tech., Korea

A new decoder type a-Si:H TFT gate driver was developed. The gate
driver composed of 11 TFTs and 2 capacitors. The gate driver operated
by input digital signal. Output voltage of the gate driver was -4.9 ~ 25.5
V. Rise and fall times was 15 µs and 20 µs, respectively.

58

Thursday
AMDp7 - 4L

December 4High Mobility and Stability Microcrystalline Silicon
Process for TFT Using Conventional PECVD
T. K. Won, J. Chen, S. Y. Choi, S. K. Beck, D. K. Yim,
J. M. WhiteAKT America, An Appl. Materials, USA

We have investigated the effects of H2/SiH4 gas ratio and Ar gas on µcSi film growth and developed highly crystalline film having a columnar
grain structure and virtually no incubation layer at interface. Bottom gate
back-channel-etch TFT was fabricated and mobility 1.15cm2/Vsec withgood stability under bias condition was demonstrated.
AMDp7 - 5L

Effective Deposition of Nanocrystalline Silicon Thin
Films at 200 °C by Catalytic CVD
T.-H. Kim, K.-M. Lee, J.-D. Hwang, Y. J. Lee, S. H. Won,
J. H. Sok, K. W. Park, W.-S. Hong
Univ. of Seoul, Korea

We attempted the change in the hydrogen dilution ratio with deposition
time in a Cat-CVD system to achieve both the minimal incubation layer
and the high throughput. We obtained the incubation layer thickness of
3 nm, and were able to grow a 200 nm-thick film in 18 minutes.
AMDp7 - 6L

Effect of Etch Process Variation on Brightness NonUniformity in AMOLED Pixel Circuit
W. J. Nam, S. K. Lee, S. J. Hwang, J. S. Shim,
Y. S. Jeong, S. J. Bae, J. Y. Park, C. W. Han, Y. H. Tak,
B. C. Ahn
LG Dispaly, Korea

We briefly report analysis on local brightness non-uniformity, possibly
due to a process variation as well as a driving scheme. The
capacitances of capacitors in the pixel are varied by etch bias
distribution. It could cause variation of data addressing, possibly
resulting in local area mura phenomena.
AMDp7 - 7L

Fabrication of High Performance Pentacene TFTs
Using TX-100 in PVP Gate Dielectric
K.-C. Song, K.-H. Baek, J.-Y. Shim, S.-S. Park,
H.-S. Shin, D. J. Kim*, K. J. Lee*, L.-M. Do
ETRI, Korea
Chungnam Nat. Univ., Korea*

We have fabricated high performance pentacene organic thin-film
transistor (OTFT) using formulated poly(4-vinylphenol) (PVP) gate
dielectric on glass substrate. The formulated gate dielectric layer wascomposed of PVP, poly(melamine-co-formaldehyde) (PMF) and Triton
X-100 (TX-100). The TX100 is a surfactant which is dispersed evenly
and it makes good surface roughness.

59Thursday
AMDp7 - 8L

December 4
The Intergrated a-Si:H Gate Driver Circuit Using
Channel Shield Pattern for HDTV/XGA
S. K. Han, H. Choi, K. S. Oh, K.H. Moon, C. G. Lee,S. Y. Choi*
LG Dispaly, Korea*Kyungpook Nat. Univ., Korea

The Intergrated a:Si:H Gate Driver Ciruits are described, especially
focusing on the charging and discharging time for HDTV/XGA. The
result of UTMOST and SMARTSPICE simulator shows a novel gate
driver architecture has been reduced 11.5% (Charing Time) and 12.1%(Discharging Time) for conventional structure.
AMDp7 - 9L

Advanced Data Line Reduction Design for Low Cost
Landscape TFT-LCDs
C. J. Shih, C. P. Ku, C. Y. Hsu, C. C. Kuo, M. S. Wu,
W. Z. Wang
Chunghwa Picture Tubes, Taiwan

A 8.9" WSVGA (1024x600) landscape a-Si TFT has been proposedusing advanced data line reduction method. Totally 600 data lines aredesigned to minimize the cost of driver ICs. Comparing the triple-gate
RGB pixel structure [1], the present menthod could further reduce thecost of data driver ICs 30%.
AMDp7 - 10L

Novel Row-Inversion IC with Reduced Flicker andCross-Talk for Low-Cost and Low-Power LCD
Applications
H. L. Ong, J. S. Chou
Kyoritsu Optronics, Taiwan

We invented a row-inversion driving scheme to reduce display flicker
and cross-talk. Multi-domain alignment (MVA) LCDs were successfully
fabricated using the improved row-inversion IC and achieving highimage quality, very high contrast ratio, and super wide viewing angle, allwhile keeping low cost, low voltage, and low power advantages.
AMDp7 - 11L

The Power Consumption Research of Stressed
Integrated a-Si Gate Driver
K. H. Lee, K. H. Cheng, Y. J. Hsieh
AU Optronics, Taiwan

The power consumption of stressed and unstressed integrated a-Si
gate driver is investigated. The power consumption decreases about
40.7% after RA test, which is measured in room temperature(25°C).
The reason is the decayed IV curve of TFT after RA test.

60

Thursday
AMDp7 - 12L

December 4
Characteristics of a-Si:H Dual-Gate TFT Using Pixel
Electrode of Back Gate with Large Width for Gate
DriverK. H. Moon, Y. S. Cho, H. Choi, C. T. Kim, C. G. Lee,S. Y. Choi*
LG Display, Korea*
Kyungpook Nat. Univ., Korea

In this paper was investigated the characteristics of a-Si:H dual-gatethin film transistor using pixel electrode of back gate with large width forgate driver in liquid crystal display. The simulation result of Athena
simulator shows the back channel was controlled by the back gate bias.
AMDp7 - 13L

Channel Shield TFT (CST) by Pixel Electrode forSuppresion of Leakage Current
K. H. Moon, H. Choi, S. K. Han, S. M. Park, C. G. Lee,S. Y. Choi*
LG Display, Korea*
Kyungpook Nat. Univ., Korea

The a-Si:H TFT device using channel shield metal was investigated forsuppresion of leakage current. This is very important design issue
owing to crosstalk and flicker. The proposed device has been reduced
by 86.6% (Ioff) and 0.877% (Voltage Holding Ratio) for conventional
structure.
15:00 - 15:50

Room 201

MEMS4/AMD4: MEMS Displays and Imaging
Chair:
Co-Chair:MEMS4/
AMD4 - 1:
15:00

M. Scholles, Fraunhofer IPMS, Germany
M. Bellis, Meradia, USA
Invited MEMS-Based Direct View Displays Using
Digital Micro Shutters
N. W. Hagood, L. Steyn, J. Fijol, J. Gandhi, T. Brosnihan,
S. Lewis, G. Fike, R. Barton, M. Halfman, R. S. Payne
Pixtronix, USA

The Pixtronix DMS (Digital Micro Shutter) display technology, basedon MEMS micro-shutters, is presented. Experimental performanceachieved on 2.5" QVGA samples is shown, including 24-bit color, 145%
NTSC (CIE 1976) color gamut, 400:1 contrast ratio, and 170° view
angles, all at 1/4 the power consumption of comparable TFT-LCD
display modules.

61

Thu./Fri.
MEMS4/
AMD4 - 2
15:20

December 4/5
MEMS Membrane Switches Backplane for Matrix
Driven Large Sign Display
K. Senda, B. S. Bae*, M. Esashi**
Sumitomo Precision Prod., Japan*School of Display Eng., Korea**
Tohoku Univ., Japan

We successfully developed membrane switches using FPC (flecible
printed circuit) material and process. Such a process has the progressof low cost backplane for flexible large signage display. We appliedfabricated membratne switches to electrophorectic display for active
matrix driving.
MEMS4/
AMD4 - 3
15:35

Active Matrix Flexible Display Array Fabricated by
MEMS Printing Techniques
C. Lo, O.-H. Huttunen*, J. Iitola-Keinanen*, J. Petaja*,
J. Hast*, A. Maaninen*, H. Kopola*, H. Fujita,
H. Toshiyoshi
Univ. of Tokyo, Japan*VTT Tech. Res. Ctr. of Finland, Finland

A fully printing techniques fabricated active matrix display array wasdemonstrated on flexible substrate by using Fabry-Perot interference
effect. Printing techniques of flexography, lift-off, gravure, andlamination were used for roll-to-roll-ready process on 125µm polymer
substrate. Red, green, and blue colors were successfully tuned forrealization of full color.
MEMS4/
AMD4 - 4

Withdrawn----- Break ----Author Interviews
18:00 – 19:00

Friday, December 5
9:00 - 10:20

Snow Hall A

AMD5: Poly-Si TFT
Chair:
Co-Chair:62

M.-K. Han, Seoul Nat. Univ., Korea
S. Utsunomiya, Seiko Epson, Japan

Friday
AMD5 - 1:
9:00

December 5
Invited Novel Rapid Crystallization Technique forAmorphous Silicon Utilizing the Thermal Plasma Jet
H. Shirai, K. Haruta, J. K. Saha*
Saitama Univ., Japan*
JST, JapanThe current research activities on the crystallization of amorphoussilicon (a-Si) utilizing the thermal plasma jet is reviewed. The film
crystallization is promoted for a-Si:H on quartz and a-SiN/CrMo hetero
structure. The linear atmospheric thermal plasma source has beendeveloped for large-area processing of TFTs.
AMD5 - 2
9:25

The Leakage Current and Stability of LTPS TFTs andLateral Diodes
N. D. Young, R. Kakkad*, K. Hashimoto**
Philips Res. Labs., UK*TPO Displays, Taiwan**TPO Displays Japan, Japan

Measurements of dark currents and photocurrents in LTPS TFTs andlateral NIP diode structures have been made, and a semi-physicalmodel has been developed. Additionally, the stability of these devices
has been assessed, and characteristic parameters have been deduced
for the degradation. This enables optimal design of LTPS products.
AMD5 - 3
9:45

Plasma Processing in the Fabrication of Silicon-onGlass (SiOG) Thin-Film Transistors
C. K. Williams, J. G. Couillard, C. Wang, J. Cites,
J. H. Cheon*, S. H. Park*, J. W. Choi*, J. Jang*
Corning, USA*
Kyung Hee Univ., Korea

A Plasma processing is widely used for TFT fabrication processing. We
present an empirical study on plasma etching of crystalline silicon on
glass as a thinning and surface treatment step that enhances TFT
performance in terms of carrier mobility, threshold voltage andsubthreshold swing values and their variations.
AMD5 - 4L
10:05

Highly Uniform Single-Grain Si TFTs Inside (110)Orientated Large Si Grains
T. Chen, R. Ishihara, A. Baiano, K. Beenakker
Delft Univ. of Tech., The Netherlands

Highly uniform single-grain (SG) TFTs have been realized by integrating
MILC and µ-Czochralski process. (110) orientated grains with 6µm
diameter were obtained on pre-determined positions. Ni concentration
was decreased below SIMS detection-limit. Standard deviation ofmobility was improved to 6%. This process is promising for integrating
3D-IC on glass substrate.
----- Break ----63

Friday

December 5

10:40 - 12:05

Snow Hall A

AMD6: System On Glass
Chair:
Co-Chair:AMD6 - 1:
10:40

K. Yamashita, TPO Displays, Taiwan
M. Hiramatsu, TMD, Japan
Invited In-Cell Touch Panel with Embedded Active
Matrix Capacitive Sensors by Using LTPS
Technology
E. Kanda, T. Eguchi, Y. Hiyoshi, T. Chino, Y. Tsuchiya,
T. Iwashita, T. Ozawa, T. Miyazawa, T. Matsumoto
Seiko Epson, Japan

We have developed a 2" in-cell touch panel with embedded active
matrix capacitive sensors which detect a change in liquid crystal
capacitance when touched. It has several advantages over conventional
external touch panels in terms of thickness, weight, lack of restrictionsof touching objects, and Multi-Touch capability.
AMD6 - 2
11:05

A New Touch Sensitive Active Matrix Display with
Embedded Light Sensors
H.-S. Park, T.-J. Ha, S.-B. Ji, J.-H. Lee*, B.-J. Lee*,
B.-H. You*, N.-D. Kim*, M.-K. Han
Seoul Nat. Univ., Korea*
Samsung Elect., Korea

We present a new touch sensitive hydrogenated amorphous silicondisplay with embedded optical sensor arrays. The touch-panel
operation was successfully demonstrated by fabricating a prototype of
the 16-inch active-matrix liquid crystal display. The proposed systemeliminates the need for the extraction of information from the captured
images in real-time.
AMD6 - 3
11:25

Static Sequential Logic Circuit Using CMOS Dynamic
Technology for LTPS TFT
Y. Suga, Y. Suzuki, S. Imai*, T. Satoh
Tokai Univ., Japan*Sharp, Japan

In this paper, the static sequential logic circuit using the CMOS dynamic
circuit technology for LTPS TFT-LCD panel is proposed. The proposed
circuit realizes high-speed operation and low-power consumption due toapplying the CMOS dynamic circuit technology. And the new circuit canbe also realized an operation at the low-frequency.

64

Friday
AMD6 - 4
11:45

December 5
Novel a-Si:H Gate Driver with Highly Reliable CenterOffset TFTs
M. S. Kwon, J. W. Choi, J. I. Kim, S. H. Kim, D. H. Oh,
S. W. Lee, J. Jang
Kyung Hee Univ., Korea

We developed a stable a-Si:H TFT gate driver comprising 3 pull-down
TFTs with center-offset structure. Measurement results show that theVth shift of a center-offset TFT is remarkably improved compared withconventional TFT. Therefore, the lifetime of the proposed gate driver ismuch longer than that of prior gate driver.
----- Lunch -----

13:20 - 14:40

Snow Hall A

AMD7: Amorphous Oxide TFT
Chair:
Co-Chair:
AMD7 - 1:
13:20

Y. G. Mo, Samsung SDI, Korea
H. Hamada, Sanyo Elec., Japan
Invited Application of Transparent Amorphous Oxide
TFT to Electronic Paper
M. Ito, C. Miyazaki, N. Ikeda, K. Murata, M. Ishizaki,
Y. Kokubo, Y. Ugajin
Toppan Printing, Japan

Application of transparent amorphous oxide semiconductor (TAOS) toelectronic paper is reviewed. We have successfully driven 5.35 inch
flexible electronic paper with 150 ppi by TAOS TFT array. Taking
advantage of transparent property of TAOS, reversible display and ouroriginal display structure, “Front Drive” Structure are demonstrated.
AMD7 - 2
13:45

Bias Temperature Stress Study of RF Sputter
Amorphous In-Ga-Zn-O TFTs
T.-C. Fung, K. Abe*, H. Kumomi*, J. Kanicki*
Univ. of Michigan, USA*
Canon, Japan

Both positive and negative bias-temperature-stress (BTS) are appliedand found to cause a positive and negative shift in a-IGZO TFT transfer
characteristics, respectively. We used the stretch-exponential equation
to model BTS induced ∆Vth on a-IGZO TFT. Stress voltage andtemperature dependence of ∆Vth evolution are described.

65Friday
AMD7 - 3
14:05

December 5
Al-Zn-Sn-O Thin Film Transistors with Top andBottom Gate Structure for AMOLED
D.-H. Cho, S.-H. Ko Park, S. Yang, C. Byun,
S. M. Chung, W.-S. Cheong, J. Shin, M. K. Ryu, J. I. Lee,
C.-S. Hwang, S. M. Yoon, H.-Y. Chu, K. I. Cho
ETRI, Korea

We have fabricated the transparent bottom and top gate TFTs using
new material of Al-Zn-Sn-O as an active layer which was deposited byroom temperature sputtering. The bottom gate structure showed goodelectrical performance, however, the bias stability was relatively poor. It
was significantly improved in the top gate structure.
AMD7 - 4

Withdrawn

AMD7 - 5L
14:25

Novel 4-mask Process for InGaZnO TFTs with Selfaligned Technique Using Direct Patterned Electrodes
and Inkjet
R. Takahashi, M. Itagaki, N. Miura, R. Iijima, Y. Shinkai
Brother Industries, JapanIGZO TFTs were developed by a novel 4-mask process, which
comprises direct-patterning of NiP for All electrodes, self-aligned
etching of a channel layer isolated by inkjet patterning and solution
coating of gate insulators. The IGZO TFTs exhibited a mobility of 13.1
cm2/Vs and high stability against gate-bias stress.
----- Break -----

15:00 - 16:15

Snow Hall A

AMD8: Crystalline Oxide TFT
Chair:
Co-Chair:N. D. Young, Philips Res. Lab., UK
Y. Yamamoto, Sharp, Japan

AMD8 - 1
15:00

Investigation of Instability Mechanisms in Zinc Oxide
Thin-Film Transistors under Bias Stress
M. Furuta, T. Hiramatsu, T. Matsuda, H. Nitta, T. Hirao
Kochi Univ. of Tech., Japan

Stability of ZnO TFTs under BT stress has been investigated. Negative
charge trapping is a dominant mechanism of Vt shift. In addition to thecharge trapping, defects are created in ZnO film under high VGS
stresses. Significant acceleration of Vt shift and state creation were notobserved by VDS stresses.

66

Friday
AMD8 - 2
15:20

December 5Theoretical Analysis of IGZO Transparent
Amorphous Oxide Semiconductor
M. Takahashi, H. Kishida, A. Miyanaga, S. Yamazaki
Semiconductor Energy Lab., Japan

We investigated the electronic structure of In-Ga-Zn-O (IGZO). We
found that the conduction path on the plane of Indium is strongly
affected by Gallium atoms; furthermore, the formation energy of oxygen
vacancy in IGZO is higher than that of typical conductive metal oxidesuch as In2O3 and ZnO.
AMD8 - 3
15:40

New Challenge to Oxide TFT Backplane Technology:
Using n-Type TiO2 Active Channel Layers
J.-W. Park, N. Jeon, J. Jang, S.-W. Han*, S. Yoo
KAIST, Korea
Techno-Semichem, Korea*

We present new n-type oxide thin-film transistors (TFTs) made oftransparent TiO2 active channels prepared by solution process and
MOCVD technique, respectively. Field-effect mobility at saturation
region (µ sat) and threshold voltage (Vth) of TiO2 active channel TFTs
were extracted to be approximately 0.06~0.12 cm2V -1sec-1 and 6.7-15V
for both deposition methods.
AMD8 - 4L
16:00

Artificial Retina Using Thin-Film Devices- Grayscale
Detectability, Moving-Image Capturing and Color
Sensitivity T. Hachida*, Y. Nishizaki*, T. Yamashita***, T. Shima*,
M. Kimura*,**, H. Hara****, S. Inoue*****Ryukoku Univ., Japan**Innovative Materials & Processing Res. Ctr., Japan***

Nara Inst. of S&T, Japan****Seiko Epson, Japan

Grayscale detectability, moving image capturing and color sensitivity of
the artificial retina using thin-film devices are evaluated. It is found thatthe output voltage is correctly measured with changing the illuminance,
location and color of the incident light.

Author Interviews
17:40 – 18:40

Supporting Organizations:LC Physics and Condensed Matter Forum, JLCS
Chemistry and LC Material Forum, JLCS
Liquid Crystal Display Forum, JLCSTechnical Group on Information Display, ITE
Technical Committee on Electronic Information Displays, Electronics
Society, IEICE
Thin Film Materials & Devices Meeting67

Wednesday

December 3

Workshop on FPD Manufacturing,
Materials and Components
Wednesday, December 3
13:20 - 14:40

Room 301

FMC1: Manufacturing I
Chair:
Co-Chair:
FMC1 - 1:
13:20

I. Bita, Qualcomm MEMS Techs., USA
N. Miyatake, Mitsui Eng.& Shipbuilding, Japan
Invited Mirasol Displays: Technology and
Manufacturing of Interferometric MEMS on Large
Area Glass Substrates
I. Bita
Qualcomm MEMS Techs., USAmirasol displays are new low power MEMS-based reflective displays
developed and commercialized by Qualcomm. Innovative design andfabrication solutions are described that allow mirasol displays to enablea superior viewing experience and extend the battery life of portabledevices.
FMC1 - 2

Withdrawn

FMC1 - 5L: Invited MnOx Self-Forming Process for TFT Electrode
13:40
Application
J. Koike, M. Sano, K. Hirota, K. Neishi, Y. Sutou
Tohoku Univ., Japan
Cu-Mn alloys were deposited on glass substrates and on oxidized n+/aSi substrates. After heat treatment, Mn reacted with the substratematerials to form Mn oxide, and acted as an adhesion promoter as well
as a diffusion barrier layer. In addition, the I-V characteristics of souredrain configuration exhibited Ohmic behavior.
FMC1 - 3
13:55

Cu Wiring Process for TFT-LCD
S. Takasawa, S. Ishibashi, T. Masuda*
ULVAC, Japan*ULVAC Materials, JapanThe low resistivity Cu wiring process using under oxide layer of Cu or
Cu alloy has good adhesion to the glass substrate and Si under-layer,
and high barrier performance of prevention between Cu and Si
interdiffusion. This Process is effective to enlarging TFT-LCD panel forhigh-definition TV.

68Wednesday
FMC1 - 4
14:15

December 3
Deposition of Microcrystalline Si1-xGex by Magnetron
Sputtering
A. Hiroe, T. Goto, A. Teramoto, T. Ohmi
Tohoku Univ., Japan

Microcrystalline Si1-xGex (x~0.8) films have been successfully
deposited by RF magnetron sputtering. Detailed investigation on thedeposition behavior has been carried out and it was found out thatthreshold temperature for crystalline phase formation is about 300°C.
Substrate bias effect on the deposition behavior was also investigated.
----- Break -----

15:00 - 16:00

Room 301

FMC2: Manufacturing II
Chair:
Co-Chair:

C. Y. Lee, ITRI, Taiwan
T. Takeda, Nagase ChemteX, Japan

FMC2 - 1

Withdrawn

FMC2 - 4L
15:00

In-Cell Retarder on Color filter for Transflective VALCDs
G. Fukunaga, T. Taguchi, S. Akao, M. Aimatsu
Toppan Printing, Japan

High performance in-cell retarders for transflective VA-LCDs are
realized on color filter. The retardation is optimized effectually for eachcolor on the reflective area and zero retardation on transmissive area.
By using our color filter, thickness of the LCDs can be decreased, and ahigh contrast ratio can be obtained.
FMC2 - 2
15:15

Innovated Linear Atmospheric Plasma for Liquid
Crystal Alignment on Polyimide Films
C.-Y. Lee, Y.-L. Liu, H.-Y. Huang, C.-H. Su, C.-H. Liu,
W.-T. Hsieh, W.-T. Hsu
ITRI, Taiwan

A linear atmospheric-pressure-plasma was developed to align the liquid
crystal molecules on polyimide films. The LC cells with these PI films
exhibit good alignment characteristic and the pretilt angles can becontrolled in the range between 0° to 1° which meet the requirement of
IPS mode in LC display.

69

Wednesday
FMC2 - 3
15:35

December 3
Development of Ink-Jet Equipment for Energy Savingand High Frequency Jetting
T. Tsuruoka
Shibaura Mechatronics, Japan

Recently, LCD monitors and TV’s have grown a lot and mother glasses
are getting larger. In this session, the characteristics of a PI coater forlarge glass substrate making use of industrialized ink-jet method,energy-saving with high productivity are presented. Its liquid droplets
dispensing and coating control are also presented.
----- Break -----

16:40 - 17:40

Room 301

FMC3: Manufacturing III
Chair:
Co-Chair:
FMC3 - 1:
16:40

P. Boher, ELDIM, France
Y. Ukai, UDDI, Japan
Invited Embedding of Capacitive Touch Sensing in
the Color Sequential Display
S.-H. Huang, S.-C. Huang, S.-R. Peng, C.-C. Kuo,
W.-C. Wang, Y.-N. Chu, W.-T. Tseng, H.-T. Yu
Chunghwa Picture Tubes, Taiwan

The new structure which embeds capacitive touch sensor in the display
not only improves the optical performance problems caused by external
touch panel, but also shows the wider color gamut and transparency.
Otherwise, the embedded module employs a standard TFT-LCD
process and brings the benefits in cost down and self-development.
FMC3 - 2
17:00

Viewing Angle and Spectral Characterization of LCDs
and Their Components
P. Boher, T. Bignon, D. Glinel, T. Leroux
ELDIM, France

A new Fourier optics system capable to measure spectral information ateach incidence and azimuth angles is presented. Full viewing angle
pattern of radiance at 31 wavelengths regularly distributed in the visible
range are obtained. Polarization analysis and grey level analysis ispossible at each.

70

Wed./Thu.

December 3/4

FMC3 - 3
17:20

Analysis of the Array Unknown Mura for TFT-LCD
Manufactory
M. Zhang*,***, Y. Gu**, Y. F. Piao***, J. S. Xue****Graduate Univ. of the Chinese Ac. of Sci., China**Technische Fachhochschule, Germany***

BOE Tech. Group, China

In TFT-LCD, mura is a defect which degrades the display quality. The
thickness and profile difference between gate lines is the main cause of“array unknown” mura. By changing the etching method, it could be
eliminated. A thinner gate layer and gentler profile could decrease array
nknown mura level.

Author Interviews
18:00 – 19:00

Thursday, December 4
9:00 - 10:20

Room 301

FMC4: Optical Films
Chair:
Co-Chair:
FMC4 - 1:
9:00

A. Lien, AU Optronics, Taiwan
R. Yamaguchi, Akita Univ., Japan
Invited Wideband Motheye Optical Devices Utilizing
Blue-ray Disc Mastering Technology
S. Endoh, K. HayashibeSony, JapanWe developed some of Blu-ray technologies to fabricate fine structures
like Motheye. By forming Motheye nano-structures on the display film,
we can apparently reduce the reflectance to 0.1-percent or less, whichis 1/30 amount of reflectance on current displays’ surfaces. And also
these Motheye films developed the transmittance above 99-percent.
FMC4 - 2
9:20

In-Cell Viewing Angle Compensation Using Pixelated
Biaxial Retarders for VA-LCDs with No Color Shift
I. Amimori, S. Suzuki, H. Kaneiwa, M. Nakajima, K. Ito,
H. Yoshino, W. Kaneko
FUJIFILM, Japan

A color shift of VA-LCDs has been extremely improved by pixelated
retarders as an in-cell compensation layer using photo-induced biaxial
cholesteric materials. DEu’v’ of a novel VA-LC cell measured at a blackstate is smaller than 0.02, and has small light leakage in all viewing
angles.

71

Thursday
FMC4 - 3
9:40

December 4
Advanced Wideband Coatable LCD Retarder with
Anomalous Dispersion of Optical Anisotropy
A. Geivandov*, A. Lazarev**, A. Manko*, S. Palto*,****Kontrakt, Russia**Crysoptix, Japan***

Inst. of Crystallography RAS, Russia

Crysoptix has introduced BA-type plate coatable retarder as an efficient
tool for optical compensation of IPS and VA-LCD modes. Today wedemonstrate the improved retarder possessing anomalous dispersion of
optical anisotropy. A new method of tuning material properties using
dye additives allows significantly suppressing colour shift during the
LCD switching.
FMC4 - 4
10:00

Hybrid-Dyeing-Process Improved Properties of
Polarizers on LCD Panels
J.-T. Lien*,**, F.-C. Lu*, C.-I. Chiang*, C.-L. Tsou*,T.-Y. Lin**, C.-N. Mo**Chunghwa Picture Tubes, Taiwan**

Nat. Taiwan Ocean Univ., Taiwan

We have developed a novel manufacturing process of film-basedpolarizers using the Hybrid-dyeing process. Hybrid-Dyeing technology
only modifies the Dye-PVA method of the manufacturing process of thefilm-based polarizer. It has some advantages, such as high polarization
ratio, low cross-transmittance, high durability and wide polarizing
bandwidth.
----- Break -----

10:40 - 12:00

Room 301

FMC5: Backlight
Chair:
Co-Chair:
FMC5 - 1:
10:40

K. Käläntär, Nippon Leiz, JapanY. B. Yang, Sony, Japan
Invited Power Reduction of LCTVs with an Adaptive
Dimming Techniques for Standard TV Programs
T. Shiga
Univ. of Electro-Commun., Japan

With the adaptive dimming technique, the backlight luminance of LCTVs
is adaptively and locally dimmed along with the input video signal.
Power saving with the technique was investigated for standard
broadcast TV contents. The power saving depends on the backlight
design factor. The effect of independent RGB control was small.

72

Thursday
FMC5 - 2
11:00

December 4
Optical Model for Designing Direct Slim Backlight
Unit
M. Nagayoshi, S. Murata, Y. Tsuru, S. Ohuchi
Hitachi, Japan

High-accurate and high-speed simulation technique to calculate
luminance distribution in Slim backlight unit (BLU) is developed. The
accuracy is more than 90%, and the calculation speed is 15 times fasterthan conventional one. Using this technique, we developed 12.6-mm
Slim BLU with high uniformity of ± 10 cd/m2/mm in luminancederivation.
FMC5 - 3

Withdrawn

FMC5 - 5L
11:20

A Hollow-Centric-Disk Backlight for Safety-Ensured
Analog-Digital Automotive/Avionics Display
Instruments
K. Käläntär
Nippon Leiz R&D Ctr., JapanA hollow-centric-disk backlight has been developed to illuminate ahollow-round transmissive liquid-crystal display that encompasses amechanical indicator needle passes through for ensuring safety in
automotive or avionics. The resulting display is a hybrid type that
integrates digital and analog instruments
FMC5 - 4
11:35

Multilayer-Incoupling-Structure Design for Ultra-Thin
LED-BacklightC. H. Ho, H. J. Cornelissen*, M. P. C. M. Krijn*, H. A. van
Sprang*Delft Univ. of Tech., the Netherlands*Philips Res. Labs., the Netherlands

A new method using a thin-film multilayer filter is proposed to couple
light from LEDs into a thin light guide. It can be as thin as 0.79mm for an
LED of 1x1mm2. With this filter, the backlight system can be much
simplified. The coupling efficiency is estimated to be 82%.
----- Lunch ----Author Interviews
18:00 – 19:00

73

Friday

December 5
Friday, December 5

9:00 - 12:00

Exhibition Hall B

Poster FMCp: FPD Manufacturing, Materials &Components
FMCp - 1

Light Plate with Metallic Nanostructures for Color
Filterless Display
Y. D. Yao, D. H. Wei*, K. W. Cheng**, S. Y. Hsu**,
P. K. Wei**, T. P. Lin***, C. N. Mo***
Tatung Univ., Taiwan*Nat. Taipei Univ. of Tech., Taiwan**Academia Sinica, Taiwan***
Chunghwa Picture Tubes, Taiwan

Periodic Ag nanostructures with different size, shape, and line pitch on
ITO coated glass substrates have been fabricated. We havedemonstrated that the back light system containing a periodic Ag
nanostructure with varied line pitches can be used as a color filter in adisplay device.
FMCp - 2

Characteristics of Pyramid and Cone Sheets with
Self-Aligning Apertures
Y. G. Kim, S. H. Paek, G. Park, J. H. Kwon, J. H. Park*,
B. G. Kim*, B. C. Ahn*, J. G. Shim*
Yeungnam Univ., Korea*LG Display, Korea

Pyramid sheet and cone sheet with apertures on the opposite side aredesigned and fabricated by the diffuse lithography. The simulation
results show that the pyramid or cone sheets with apertures havenormal luminance compatible with the dual crossed prism sheets andcontrollable view angle.
FMCp - 3

ITO Etching Properties of a Compacted In-Line Wet
Etch/Cleaning System by Using a Reverse Moving
SystemS. H. Im, M. H. Ahn, K. M. Choi, E. S. Cho, S. J. Kwon
Kyungwon Univ., Korea

For the cost reduction in the fabrication of display panels, a reverse
moving system was equipped to an in-line wet etch/cleaning system.
For the effect of the alternating movement of substrate on the wet etch
process, ITO layer were etched in various moving modes and theresults were analyzed.

74

Friday
FMCp - 4

December 5
Ampere Particle Current Beams of Boron andPhosphorus for the Ion Implantation of Very Large
FPDs Using Multiple Ribbon Beam Permanent
Magnet Mass Separation
D. Aitken
Superion, UK

The permanent magnet mass analysis described in this paper is aimed
at ampere level boron or phosphorus particle beam current, using
multiple large (1-3 metres) double ribbon beams, with transmission ofmultiple ion species containing the required implant particle. The designof the magnet is independent of the substrate size.
FMCp - 5

Arc Discharge Optimization to Obtain High Current ofBoron and Phosphorus Ion Beam from a Multi-Cusp
Ion Source
Y. Inouchi, G. Takahashi, S. Dohi, M. Tanii, M. Konishi,
M. Naito
Nissin Ion Equipment, Japan

A multi-cusp ion source with large extraction area was improved toobtain high currents of boron and phosphorus ions, and above 500µA/
cm of target currents was confirmed for both ion species. Optimum
potential applied to a plasma electrode with respect to a plasmachamber was dependent on ion species.
FMCp - 6

Functions-Integrated Liquid Crystal Polymer Layerwith Surface Grating Made by Nanoimprint
Lithography Process
S.-W. Lin, Y.-Y. Lai, H.-L. Kuo, P.-C. Chen, M.-C. Peng,
Y.-P. Hsieh
ITRI, Taiwan

The liquid crystalline polymer (LCP) layer which integrates polarizing
and aligning functions fabricated by nanoimprint lithography ispresented. Furthermore, a 1x1 in2 LCD cell with liquid crystal
sandwiched by a pair of the functions-integrated LCP layers isfabricated, and the contrast ratio of the cell can be up to 39:1.
FMCp - 7

Methodology of Reliability Characterization and Yield
Optimization for TFTs in AM-LCDs
J. J. Chang, C. S. Chuang, C. Y. Chen, J. P. Tseng,
Y. M. Chen, C. C. Hsiao, H. T. Yang, K. S. Wang,
J. C. Chen
AU Optronics, Taiwan

In this paper, we analyzed the impact of process induced device
degradation on TFT-LCDs manufacturing. Three plasma-related topics
were categorized and investigated. Moreover, device reliability ofdifferent processes and prediction of yield improvement were also
important focus in this research.
75

Friday
FMCp - 8

December 5
A Stress Measurement and Inspection System for
Flexible Display Substrates and LCD Glasses
C. Wu, Y. Hsieh, W. Lin, F. Yang, K. Chuang
ITRI, Taiwan

A stress measurement and inspection system was built to analyze thestress distribution of the substrate of flexible display or liquid crystal
display. The system was based on the photoelastic method and had theability to implement a non-contact, non-destroy, and fast measurement.
ith a layer of ITO.
FMCp - 9Novel Material for Coatable Negative C-Plate
RetarderT. Yamashita, S. Yoshida, M. Eguchi, J. Tsukamoto
Toray Ind., JapanWe developed a novel coatable negative C-plate retarder havingfeatures of (1) no need of aligning treatment including rubbing andphoto-alignment, (2) high transmittance, (3) high thermal durability. By
applying newly developed negative C-plate retarder to opticalcompensating VA-LCDs we could realize thin and light-weight LCDs
with wide viewing properties.
FMCp - 10

Reactive Mesogen (RM) Technology of Zero
Retardation for In-Plane Switching (IPS) ModeJ. B. Park, S. H. Choi, Y. J. Choi, I. S. Cho, Y. W. Kim
Hyosung, Korea

In this paper, we propose novel low retardation film compatible toconventional Z-TAC. The concept is to adopt C plate (LC coating) on
normal TAC (-C plate). And, to obtain optimized low retardation effect,
we optimize coating thickness of C plate on conventional TAC.
FMCp - 11

Retardation Films with In-Plane Oblique Slow-Axis
M. Hirota, T. Asada, T. Hori, K. Miyagi, K. Arakawa
ZEON, Japan

We have succeeded in manufacturing a retardation film with the inplane oblique slow-axis. We could control the direction of its slow axis
and its optical parameters. In this work, we designed and evaluated the
VA mode using the retardation film with the in-plane oblique slow axis.

76Friday
FMCp - 12

December 5
Novel Patterned LC Polymer Retarders for Preventionof Wavelength Dispersion
J. Ahn, M. K. Kim, A.-R. Han, Y. C. Kim, S.-H. Paek
Kyunghee Univ., Korea

We have prepared a novel patterned retarder made from liquid
crystalline polymer by sequential area-selective UV irradiation. By
controlling the photo-polymerization condition, we obtained thepatterned retarder with three sections optimized to retard red, green,
and blue. The retarder also had a wide allowable wavelength range andhigh thermal stability.
FMCp - 13

Single-Layer Retarder for LCD
A. Lazarev, A. Geivandov*, I. Kasianova*, E. Kharatiyan*,P. Lazarev*, S. Palto*,**Crysoptix, Japan*Kontrakt, Russia**
Inst. of Crystallography RAS, Russia

We have developed a full set of coatable thin birefringent film (TBF)
retarders for LCD. New printable retarders allow efficient opticalcompensation in VA and IPS LCD modes using a single-layer film.
Replacement of conventional stretched polycarbonate retarders withsubmicron, solution-processed TBF provides substantial cost reductionof LCD optical components.
FMCp - 14

Polyvinyl Alcohol-Iodine Complexes Formation in
Aqueous Solution for Improvement of Polarizing
Properties of Polarizer
D. Ogomi, M. Miyazaki, H. Mizushima, M. Miyatake
Nitto Denko, Japan

We studied the effect of iodine/KI and boric acid on PVA-iodine complex
formation in aqueous solution. Moreover, we attempted to improve thepolarizing properties of the polarizer on the base of the formation
behavior of PVA- iodine complexes in aqueous solution.
FMCp - 15

New Method to Evaluate and Quantify Possibility ofDent Issue on Polarizer
M. T. Weng, W. F. Sung, P. J. Yeh
AU Optronics, Taiwan

In order to decrease the dent issues on polarizer in mass production
stage, a novel method has been developed to evaluate and quantify thedent issues on polarizer. The result shows that this novel method could
grade possibility of the dent issue on polarizer successfully without
preparing extra equipment.

77

Friday
FMCp - 16

December 5
Brightness-Enhancement Film Using a Single
Cholesteric Liquid Crystal Layer
K. Tamura, K. Harai, Y. Fujino, K. Kawabata, K. Arakawa
ZEON, Japan

We have developed new brightness enhancement film with a single
cholesteric liquid crystal layer made of liquid crystal mixture with high∆n and quarter wave retardation film of the highest nz in the three
refractive indices. The simple structure enables to manufacture thebrightness enhancement film at lower cost.
FMCp - 17

Optimized Light-Guide Design for Thin Direct
Backlight
C. S. Chu, Y. T. Li, H. H. Chen
Elect. & Opto-Elect. Res. Labs., Taiwan

The thickness of a direct backlight module is improved to be thinner
because lightguide is applied. The lightguide for adjusting uniformity oflight from LED or CCFL could be used. By using the proposed
lightguide, the thickness of light mixing cavity of a direct backlight will be
realized into 20mm.
FMCp - 18

Film-Bonded Light-Guide Plate Without Using
Optical Films
Y.-Y. Chang, C.-J. Ting, W.-H. Yang
ITRI, Taiwan

We proposed a film-bonded light-guide plate (LGP) of which theemitting light could be well-controlled without additional prism sheets
and light efficiency is high. In addition, a bonding layer with higher
refraction index can make the emitting light more concentrating. This
design could be applied for a sheetless LGP.
FMCp - 19

Highly light Collimating Backlighting System
Y.-Y. Chang, C.-S. Hsu*, C.-J. Ting, C.-P. Chou*
ITRI, Taiwan*
Nat. Chiao Tung Univ., Taiwan

We proposed a backlighting system with high-collimating emitting
properties of FWHM smaller than 10 degree. A 55mm×60mm prototype
is fabricated by ultra-precision diamond tooling and UV embossing. The
defects of turning film would lower the collimating emitting properties.
FWHM of 7~12 degree is feasible in the current fabrication ability.

78

Friday
FMCp - 20

December 5
A Novel Simplified Light Guide Plate Design
C. H. Chien, W. T. Hsu, H. C. WangNat. Sun Yat-Sen Univ., Taiwan

In this investigation, an improved design of light guide plate (LGP) witha new type of edge structure and a simplified micro-prism (V-Cut)bottom structures for generating uniform illuminance distribution was
proposed. For the proposed LGP, more design time can be retrenchedand be manufactured more easily.
FMCp - 21

Automatic Pattern Design for Light Guide Used inEdge-Lit Backlight
M. Chen, D. Chen, B. Chieh
AU Optronics, Taiwan

Based on energy conservation, a formula describing the relation
between output luminance and design dot density in an edge-lit
backlight was derived. Using this formula, the dot pattern design can befinished in a few design iterations, so that the developing cost and time
can be saved.
FMCp - 22

Enhancement of Value Added on Backlight Module
by Diffuser Plate with Pattern
Y. Takahashi, K. Tsukada, K. Kusano, I. Konishi
ZEON, JapanWe developed the diffuser plate made of ZEONOR by the injection
molding, and enabled the surface of diffuser plate to be given various
fine patterns. As a result, we could provide ultra-thin backlight module,
backlight module of using fewer CCFL, and thin backlight module of
LED as light source.
FMCp - 23

A Multi Structure Diffuser Plate for Direct LCD TV
Backlight
Y. Luo, Y. C. Cheng, L. C. Chang
Innolux, Foxconn Tech. Group, China

LCD TV has being more and more popular. To make it green, thinner,
lighter, and cover customers’ other requirements, we still have many
problem to overcome. This paper is aimed to improve the lamp Mura of
direct LCD backlight using a novel multi-structure diffuser plate.

79Friday
FMCp - 24

December 5
A Simulation Study on the Optimization of OpticalFilms for Edge-Lit Backlight
J.-H. Park, Y. H. Ju, J. H. Lee, K.-B. Nahm, J.-H. Ko,
J. H. Kim*
Hallym Univ., Korea*Samsung Elect., Korea

A simulation model of a simple edge-lit backlight was constructed forevaluating optical performances of collimating sheets. The on-axis
luminance gain of micro-lens sheets was sensitive to the geometricalparameters of micro lenses, which suggests that a reliable simulation
model can be used to develop new collimation sheets.
FMCp - 25

Anti-Scrape Luminance Enhancement Film
C.-W. Yu, Y.-H. Lin*, H.-H. Lin, T.-H. Lin
ITRI, Taiwan*Toplux Tech., Taiwan

A novel anti-scrape brightness enhancement film is demonstrated here.
Higher aspherical and lower prism structures are periodically formed on
the PET substrate, thus the touched part with the component above thefilm is the part of aspherical structures. The smooth touched part canprotect the film from scrape.
FMCp - 26

White Reflection Molding Compound for Surface
Mount LEDs
N. Urasaki, M. Mizutani, H. Kotani
Hitachi Chem., Japan

We have developed a white reflection molding compound that has thehigh reflectance up to near the ultraviolet region and good reliability.
The surface-mounted devices using developed material showed goodluminosity and voltage retention stability during the temperaturehumidity lighting test and the thermal cycle test.
FMCp - 27

Binning Analysis of Phosphor-Based Light Emitting
Diode for Direct-Lit BacklightY. H. Chang, Y. K. Lin, Y. K. Lan, R. HW Lin, J.-C. Liang,
S. ChiAU Optronics, Taiwan

We represent a systematic procedure to analyze the bin managementof direct-lit LED backlight with phosphor based LED. A simple method is
also proposed that improve bin utilization by mixing different bins.

80Friday
FMCp - 28

December 5
A Novel Full-Color-LED-Backlight Design in TFT-LCD
H.-W. Chen, Y.-H. Chen, I. P. Hung, S.-J. Chiou
Chunghwa Picture Tubes, Taiwan

A Novel LED backlight system to fit the color filter’s spectrum. Based on
this technology, we successful to improve white light LED Backlight’scolor gamut NTSC from 64% to 80%, and improve RGB LED Backlight’scolor gamut NTSC more than 110%.
FMCp - 29

Optical Characteristics of Direct-Lit Flat-Lamp
Backlights for LCD Applications
M.-Y. Yu, Y.-Y. Kim, J.-H. Ko, S.-H. Yu*, S.-E. Lee*
Hallym Univ., Korea*Korea Polytechnic Univ., Korea

The effects of optical sheets on the performances of flat-lamp backlighthave been examined quantitatively. A detailed analysis of the luminancegain and the viewing-angle characteristics have been carried out. Originof the worse performances of conventional sheets in the flat-lamp
backlight as well as possible solutions has been discussed.
FMCp - 30

New Driving Method and Circuit for Low Cost Local
Dimming Xe Backlight Unit
J. N. Heo, J. K. Lim, J. Y. Kim, H. S. Tae, J. H. Seo*,
K. S. Lee**
Kyungpook Nat. Univ., Korea*Incheon Univ., Korea**Samsung Corning Precision Glass, Korea

The new driving method and circuit are proposed for a low cost local
dimming Xe backlight unit. The basic concept of the proposed driving
method is that the subsequent discharge can be produced easily under
the low voltage condition thanks to the wall charges induced by theprevious discharge.
FMCp - 31

Nanostructure Arrays for Backlight Luminance
Enhancement
Y. M. Lan, D. H. Wei, Y. D. Yao*, J. K. Wu*, C. R. Lin,T. P. Lin**, C. N. Mo**
Nat. Taipei Univ. of Tech., Taiwan*Tatung Univ., Taiwan**Chunghwa Picture Tubes, Taiwan

By using polystyrene ball array as a template to fabricate networking
hexagonal Ag nanowall, and the total lighting output was enhanced by
20%. We believe that the networking nanowall of the Ag nanostructure
acted as a waveguide to extract the light emitted to the outer medium
effectively.

81Friday

December 5

FMCp - 32

Withdrawn

FMCp - 33

Photosensitive Spin-on Glass Material with Phenyl
Silsesquioxane (PSQ) Derivatives
Y. Tashiro, T. Iwata, T. Sekito, D. Yokoyama, T. Nonaka
AZ Elect. Materials Japan, Japan

We succeeded in development of SOG materials based on alkalisoluble phenyl silsesquioxane (PSQ) backbone. The alkali soluble
Silsesquioxane (APSQ) can provide both positive and negative-tone ofphotosensitieve SOG combination with diazo naphtoquine or photobase agent, respectively. Here we demonstrate successful usage ofphotosensitive SOG materials and lithography patterning.
FMCp - 34

Aminosilane Silicon Oxide Gas Barrier Coating on
Plastic Substrates
H. G. Kim*,**, M. J. Kim*, S. S. Kim*,***Kyung Hee Univ., Korea**Regional Innovation Center-Component and Material
for Inf. Display, Korea

Silicon oxide-like layers were coated on PES by sol-gel process and it
was oxygen plasma treated. γ -APS solution in ethanol was coated andcured to still enhance the barrier properties. XPS, FE-SEM have beenused for characterizing the silicon oxide-like layers. Organofunctionalsilanes bonds were formed by the interaction of the silanol groups withmetal oxide surface, which covered the defect of silicon oxide layer on
the substrates. The oxygen transmission rate of barrier coatedsubstrates was found to be 1.05 cc/ m2 day, which attained the barrier
performances obtained from physical inorganic layer deposition
method.
FMCp - 35

Optical and Electric Conductivity Properties of
Optimized ZnO-Based Multilayer Thin Films
J. Dong, S. L. Wu, F. Wang, H. F. Liang, F. G. Zhao,
L. G. Meng, J. T. Zhang
Xi’an JiaoTong Univ., China

ZnO/Al-AlN/ZnO multilayer films have been proposed to use in flat
panel display devices. The merits of this ZnO based sandwich
structure include environment-friendly and low price properties. By
optimizing the interlayer’s thickness and the deposition temperature, amean transmittance more than 85% and an effective resistivity 1.18 ×
10-3Ω⋅cm have been achieved.

82Friday
FMCp - 36

December 5
The Electrical Properties of Al, Ga-Codoped ZnOThin Films: The Effect of Film Thickness and Oxygen
Partial Pressure
K.-H. Seo, C.-W. Kim, M. Park, B.-H. Lim, S.-J. Yu,
H. Choi*, S.-K. Lim*, S.-H. Yang*
LG Display, Korea*
Heesung Metal, Korea

Thin films of AGZO have been deposited on glass substrate by dcmagnetron sputtering. The electrical and optical properties of thesefilms were investigated as a function of film thickness and oxygen partialpressure. The minimum resistivity of 3.7 × 10-4Ωcm and high averagetransmittance above 90% in the visible region were exhibited.
FMCp - 37

Preparation of Impurity-Doped ZnO Transparent
Electrodes Suitable for LCD Applications by
Magnetron Sputtering
J. Nomoto, M. Konagai, J. Oda, H. Fukada, T. Miyata,
T. Minami
Kanazawa Inst. of Tech., Japan

Impurity-doped ZnO thin films suitable for transparent electrodeapplications in LCDs that reduce resistivity and improve the uniformityof resistivity distribution have been prepared by newly developedoxidization-suppressing dc magnetron sputtering deposition methods
that superimpose rf power and use more optimized targets.
FMCp - 38

Development of a New Environmentally-Friendly LCD
Glass Substrate: OA-10G
T. Yanase, Y. Kato, S. Miwa, H. Yamazaki
Nippon Elec. Glass, JapanWe developed an environmentally-friendly LCD glass substrate, OA10G. OA-10G exhibits optimum properties for TFT-LCD glass
substrates. OA-10G is compatible with our conventional substrate, OA10. Moreover, OA-10G is suitable for larger and thinner glass
substrates.
FMCp - 39

Development of Silica-Dispersed Composite
Substrates for Flat Panel Displays
G. H. Kim*, S.-M. Yoon*, Y.-H. Song*, H.-A. Chun*,***ETRI, Korea**KITECH, Korea

A new composite substrate for flat panel display, which consists of nanosilica-dispersed composite film and a gas barrier layer, was developed.
It shows low CTE, high light transparency and chemical resistance.

83Friday
FMCp - 40

December 5
Investigation on Photo-Resist Crack in the Thin-FilmTransistor 4-Mask Fabrication Process
Z. T. Wang, T. Y. Min, H. J. Qiu, J. G. Zhao, W. B. Gao,
S. K. Lee, S. Y. Cho*
BOE OptoElect. Tech. Group, China*DongJin Semichem, Korea

Photo resist crack in 4Mask process are investigated. Nitric acid attack
to photo resist is confirmed to be the cause of photo resist crack. The
practical solutions to remove photo resist crack is to control nitric acidconcentration in S/D wet etchant and soft bake time in gray tone mask.
FMCp - 41L

The Properties of ITO Films with Oxide Buffer Layer
Grown onto PES Substrates
S. M. Lee, C. S. Kim, S. K. Jung, S. H. Sohn
Kyungpook Nat. Univ., Korea

ITO films with the oxide buffer layers (TiO2, SiO2) were deposited by a
low frequency (LF) magnetron sputtering method onto the PES
substrates. The change of sheet resistances of ITO films with the oxide
buffer layers was investigated as a function of the aging time in the air
and the vacuum.
FMCp - 42L

Improving Light Extraction Efficiency ofMonolithically Fabricated Micropatterned Light
Guide Plate
H.-S. Lee, H. Song, Y.-K. Mun, Y.-S. Choi, J.-H. Yeon*,
J.-H. Lee*, J.-B. Yoon*, H.-Y. Choi, S. Lee
Samsung Elect., Korea*
KAIST, Korea

Light extraction efficiency is improved by Introducing new dumbbell-likeextraction structures to the monolithically fabricated micropatterned
light guide plate (LGP) in Ref.1,2. The fabricated 2.2inch LGP withsuggested structures without any additional optical film shows anaverage luminance 4032nit and 70% uniformity with four side view
0.97cd@15mA LEDs.
FMCp - 43L

Photo-Sensitive Passivation Layer for a-Si TFT of
LCD with Characteristics of Low Dielectric Constant
K. Sugitani, A. Tanabe, M. Hammura, H. Ohmori
ZEON, Japan

Solution-processed organic passivation layer was developed for a-Si
thin film transistor. This layer has high reliability equal to traditionalpassivation layer (SiNx:H). This material also has the function ofplanaraized layer and the characteristic of low-dielectric constant, which
decreases RC delay, especially in the field of large size LCDs.

84

Friday
FMCp - 44L

December 5
Patterned Retarders and Polarizers Based on
Reactive Mesogens Aligned by Plasma Beam
O. Yaroshchuk, R. Kravchuk, O. Parri*, V. Chigrinov**,
H.S. Kwok**
NAS of Ukraine, Ukraine*
Merck Chems., UK**Hong Kong Univ. of S&T, Hong Kong

Recently, we reported extension of ion/plasma beam alignment
technique for the alignment of reactive mesogens (RM). The present
study shows that this technique can be successfully used for thealignment pattering of RM films. A variety of prototypes of patterned
retarders and dichroich polarizers is prepared.
FMCp - 45L

A General Purpose Configuration Design of Magnetic
Board for Better Film Coating Uniformity
C. Wei, J. M. Chen*
Tatung Univ., Taiwan*Chunghwa Picture Tube, Taiwan

A magnetic board was used in a plasma enhanced coating system. The
film quality is affected by the magnetic field which is associated with theconfiguration of the magnetic board. A new configuration design aims toeliminate the film thickness variation caused by the non-uniform magnet
field was proposed.
----- Lunch -----

13:20 - 14:40

Room 301

FMC6: Materials I
Chair:
Co-Chair:D. Allan, Corning, USA
K. Miyazawa, Chisso, Japan

FMC6 - 1
13:20

Novel Photorefractive Material Development for New
Updatable Holographic Three-Dimensional Display
M. Yamamoto, W. Lin, T. Gu, D. Flores, P. Wang, S. Tay*,
L. Guoqiang*, P. Blanche*, R. Voorakaranam*, A. Tunc*,
P. Hilaire*, J. Thomas*, R. Norwood*, N. Peyghambarian*
Nitto Denko Tech., USA*
Univ. of Arizona, USA

We have successfully developed novel organic polymer-based
photorefractive materials which have both good diffraction efficiency
and long grating persistency. Developed materials were succeeded inprinciple-proving concept of novel, highly image-persistent, andrewritable holographic display systems. By using the materials, we arealso aiming for developments of holographic rewritable display devices.

85

Friday
FMC6 - 2
13:40

December 5
Thermal Creep and Warp Performance of Jade-like
High Viscosity Glasses
D. Allan, M. Potuzak
Corning, USA

Beam-bending measurements of creep in a modified beam-bending
viscometry apparatus show important differences among glasses withdifferent viscosity. Glasses with higher viscosity have less creep, which
is important for avoiding creep and the associated warp (permanentshape deformation) during processing of glass sheets for polysiliconliquid crystal display applications.
FMC6 - 3
14:00

Mechanical Attributes of Jade Glass for Advanced
Displays
S. T. Gulati, J. D. Helfinstine, T. Ono*
Corning, USA*Corning Tech. Ctr., JapanThe mechanical properties of Corning’s Jade glass are ideally suited formobile displays. The key focus of this paper is to provide comparative
data for scored and finished edges of Jade vs. a-Si glasses which
confirm that Jade offers higher edge strength and good cuttability thana-Si glasses.
FMC6 - 4
14:20

Photo Degradation Properties in Oriented Liquid
Crystal Modes
R. Yamaguchi, M. Ogura, S. Sato*
Akita Univ., Japan*
Akita Pref. R&D Ctr., Japan

Photo degradations of LC cells with homogeneous, homeotropic,
twisted nematic and hybride orientation have been investigated. The
degradation of the TN cell started first by the reduction of the azimuthal
anchoring strength. The photo stability does not change if in the cellunder the voltage application.
----- Break -----IDW Best Paper Award
This award will go to the most outstanding paper
selected from those presented at IDW ’08.
The 2008 award winners will be announced on the
IDW website:
http://www.idw.ne.jp/award.html
86Friday

December 5

15:00 - 16:20

Room 301

FMC7: Materials II
Chair:
Co-Chair:
FMC7 - 1:
15:00

P. Drzaic, Unidym, USA
T. Nonaka, AZ Elec. Materials, Japan
Invited Chemical Design of Polysilsesquioxane as aGate Insulator for Organic Thin-Film Transistors
T. Hamada*,**, S. Yamazaki*,**, T. Nagase*,**,
K. Tomatsu**, Y. Ueda**, M. Watanabe*,****,
S. Watase*,****, T. Tamai*,****, T. Kobayashi*,**,
S. Murakami*,***, H. Naito*,**, K. Matsukawa*,*****

JST, Japan
Osaka Pref. Univ., Japan***Tech. Res. Inst. of Osaka Pref., Japan****Osaka Municipal Tech. Res. Inst., Japan**

Novel functional polysilsesquioxane gate insulator materials have beendeveloped, which have a high-dielectric constant, photolithographic
property, and hydrophobic surface by changing the chemical structure.
Top-contact organic thin-film transistor (OTFTs) fabricated onpolysilsesquioxane insulator using poly(3-hexyl)thiophene as anorganic semiconductor exhibits good transistor property.
FMC7 - 2:
15:20

Invited Integration of Transparent Carbon Nanotube
Electrodes into a Color 5.5-in. AMLCD
Y.-B. Park, L. Hu, G. Irvin, P. S. Drzaic, J. H. Hur*,J. M. Kim*, J. Jang*
Unidym, USA*Si-Display Tech, Korea

We describe the details associated with the fabrication of a full color
5.5" active matrix liquid crystal display with integrated carbon nanotube(CNT) transparent electrodes for both pixel electrode of the TFT
backplane and common electrode of the color filter side. Processes andresults for coating and patterning the CNT layers are described andproto-type AMLCD is demonstrated.
FMC7 - 3
15:40

Engineered Nanoparticles for Display Optics andElectronics
N. Kambe, H. Du, G. Liu, A.-L. Chu, I. S. Altman,
S. Chiruvolu
NanoGram, USA

Nanoparticles applications for FPD are expected as an enabler for the
next-generation products. Laser-driven chemical synthesis and surface
engineering of inorganic nanoparticles to be bonded to organic
polymers are outlined. Refractive-index engineering for light-path
management, Si inks for backplane printing, and LED nanophosphors
are discussed as application examples.
87Friday
FMC7 - 4
16:00

December 5
Structure-Correlated Stability of Thin Films ofPentacene Formed by Liquid Process
T. Minakata, Y. Natsume
Asahi-KASEI, Japan

We have fabricated wet-processed thin-film transistors of unsubstituted
pentacene by two kinds of fabrications both solution and dispersion
processes. Stabilities of the carrier mobility of the films against ambientstorage have been studied and it turns out that they are correlated withthe thin film structures.
----- Break -----

16:40 - 17:55

Room 301

FMC8: Materials III
Chair:
Co-Chair:K. Fujishiro, Nippon Steel Chem., Japan
D. Aoki, Dai Nippon Printing, Japan

FMC8 - 1
16:40

Development of New Green Pigment,
Polyhalogenated Zinc Phthalocyanine for Color Filter
S. Funakura, Y. Tachikawa, A. Kudo, I. Yao, K. Shimada
DIC, Japan

Polyhalogenated zinc phthalocyanine pigment (Green 58) demonstrates
better properties of brightness, contrast ratio and chromaticity thanconventional polyhalogenated copper phthalocyanine pigment (Green36) in color filter. Quantum chemical calculations of these pigmentssuggest that phthalocyanine ring symmetrical property of Green 58 ismore than that of Green 36.
FMC8 - 2
17:00

Optical-Electrical Transport Characteristics, UVVisible Enhanced Photo Response with Embedding
Si-Rich SiOx Photonic Sensor in LCD Panel
A.-T. Cho, C.-T. Peng, M.-H. Lee, C.-C. Shih, S.-S. Chen,
Y.-J. Hsu, C.-C. Chiu, J.-S. Chen, W.-M. Huang
AU Optronics, Taiwan

We report a UV-visible photonic sensor with Si-nanocrystals sensitizer
on TFT-LCD panel. As the photonic sensor was operated by bias,
enhanced photo-response with largely opto-electronic conversion
demonstrated transistor-like operation mechanism. Photonic sensor
using Si-nanocrystals as sensitizer sandwiched between two electrodes
structure is proposed to integrate with UV-to-Visible, ambient-lightsensing on TFT-LCD.

88

Friday
FMC8 - 3
17:20

December 5
The Syntheses of Divinylbenzene-Based Soluble
Copolymers with Reactive Terminal Groups andHighly Branched Structures, and the Development ofNovel High Refractive Index Optical Materials for
Fine-Patterned Optical Sheets
M. Kawabe, H. Kitajima, N. Nishio, I. Akiba*
Nippon Steel Chem., Japan*Univ. of Kitakyushu, Japan

Soluble poly(divinylbenzene-co-ethylstyrene-co-styrene)s (PDVs) withreactive terminal functional groups and highly branched structures weresynthesized by cationic polymerization. The novel UV-curable opticalmaterials were developed using by the PDVs. These materials exhibitedhigh refractive index (nD=1.56-1.60) and excellent fine-pattern
moldability. Cosequently, these materials are very attractive as a prism/
lens sheets.
FMC8 - 4L
17:40

Multi-Primary Color Filter for LED Backlight
T. Sumino, S. Nakazawa, T. Yano
Dai Nippon Printing, Japan

Multi primary color filter is applied to get wide color gamut and highefficiency liquid crystal displays. In this paper, we evaluated multiprimary color performance using RGB, RGBY and RGBYC primarycolor filters and some LED backlights.

Author Interviews
17:40 – 18:40

Supporting Organizations:
The Japan Society for Printing Science and Technology
Japan Society of Colour Material
The Technical Association of Photopolymers, Japan
Society of Photographic Science and Technology of JapanThe Society of Radtech, JapanThe Japanese Research Association of Organic Electronics Materials
Japan Electronics Packaging and Circuits Association

89Thursday

December 4Workshop on Plasma Displays
Thursday, December 4
9:00 - 10:20

Room 302

PDP1: Cell Technology
Chair:
Co-Chair:

L. S. Park, Kyungpook Nat. Univ., Korea
Y. Murakami, NHK, Japan

PDP1 - 1
9:00

LaB6: New Cathode Material for AC PDP TVs
M. Ono, S. Hara, T. Shiga, Y. Amano*
Univ. of Electro-Commun., Japan*TT&T, JapanThe low-cost LaB6 electrode has been incorporated into AC type PDP
TVs. Since LaB6 is conductive, unlike MgO, different panel structureand driving methods from those of MgO PDPs have to be adopted. This
paper introduces how TV expression was realized with the LaB6 PDP.
PDP1 - 2
9:20

Effects of Solution Synthesized Thin-Film Phosphor
Layer on the Characteristics of Transparent AC PDPs
H. N. Choi, S. Y. Lee, Y. S. Kim
Hongik Univ., Korea

In an attempt to develop a transparent full-color ac-PDP, transparent
phosphor layer was prepared via several processing process:electrophoretic deposition and liquid reaction process. Effects of coating
thickness on optical transmittance and luminance of test panels were
investigated. The results indicated that full color transparent ac-PDP is
feasible with the approach.
PDP1 - 3
9:40

Development of Low Cost PDP with ITO-Less Fence
Electrode Cell Structure
A. K. Srivastava, M. Samanta, A. Mitra, J. Chaki
Samtel Color, India

A silver fence electrode structure with straight barrier ribs has beendeveloped. During cell design optimization, various issues of existingfence electrode structure are focused. This fence electrode structure
provides 10% improved luminance as compared to ITO based structure.
Such cell structure can be optimized for low-cost high-resolution plasma
displays.

90Thursday
PDP1 - 4
10:00

December 4
Variation of Auxiliary Electrode Width in an AC PDP
S.-M. Lee, C. S. Choi, K. C. Choi
KAIST, Korea

The width of an auxiliary electrode was varied in order to increase thevoltage margin and the luminous efficacy in FEEL PDP. The voltage
margin and the luminous efficacy in FEEL PDP with a narrow auxiliaryelectrode were higher than those in FEEL PDP with a wide auxiliaryelectrode.
----- Break -----

10:40 - 12:00

Room 302

PDP2: Driving & Discharge
Chair:
Co-Chair:L. F. Weber, Consult., USA
K. Nunomura, Japan

PDP2 - 1
10:40

Observation of Vacuum Ultraviolet Radiation from
SrO- and SrCaO-PDP Operated at Lower Voltage
G. Uchida, F. Xing, S. Uchida*, T. Yano, N. Awaji,
H. Kajiyama, T. Shinoda
Hiroshima Univ., Japan*Tokyo Metropolitan Univ., Japan

Here is presented the measurement on SrO- and SrCaO-PDP operated
at lower voltage. SrO- and SrCaO-PDP attained high luminous, where
the breakdown voltage is 30 % lower than that of MgO-PDP. The VUVobservation shows that the excimer production is more efficient for highXe contents and high sustaining voltage.
PDP2 - 2
11:00

Reduction of Address Delay Time Degradation by
Discharge Transition from Priming Cell to Display
Cell in AC PDPs
S. Nobuki, N. Uemura, S. Ho, M. Shiiki, K. Suzuki
Hitachi, Japan

We clarified temporal degradation of address delay time is caused by adecline in the number of electron sources. We verified dischargetransition from a priming discharge to an address discharge to reduce
degradation. The priming path height was about 7 µm. The dischargetransition time was about 0.2 µs.

91

Thursday
PDP2 - 3
11:20

December 4
Effects of Wall Charge Leakage and Address
Discharge Characteristics under Variously SputteredMgO States in AC PDP
C.-S. Park, S.-K. Jang, H.-S. Tae, E.-Y. Jung*, E. G. Heo*
Kyungpook Nat. Univ., Korea*
Samsung SDI, Korea

The effects of the wall charge leakage and address discharge
characteristics are examined under variously sputtered MgO states.
With an increase in the amount of MgO sputtered from the MgO
surface, the wall charge leakage and the variation in the formative
address delay time are minimized under the address on-times.
PDP2 - 4
11:40

New Energy Recovery Circuit with Asymmetric
Inductance for AC PDP
J. K. Lim, B.-T. Choi, H.-S. Tae, H. J. Kim*, M. Hur*,
M. Yoo*, E. G. Heo*
Kyungpook Nat. Univ., Korea*Samsung SDI, Korea

A new energy recovery sustain-circuit (ERC) using asymmetricinductance is proposed to reduce the power consumption of an ac-PDP.
The proposed ERC uses different inductors in the energy recovery
circuits of the Y- and X-boards, respectively, to compensate for the
dissymmetric phenomenon of the sustain waveforms in the Y- and Xboards.
----- Lunch ----Author Interviews
18:00 – 19:00

92

Friday

December 5
Friday, December 5

9:00 - 12:00

Exhibition Hall B

Poster PDPp: Plasma Displays
PDPp - 1

Development of Simulators on Precise
Characterization for PDP Materials
A. Endou*, I. Yamashita*, K. Serizawa*, H. Onuma*,
K. Inaba*,**, H. Kikuchi*,**, R. Sato*,**, A. Suzuki*,
M. Koyama*, H. Tsuboi*, N. Hatakeyama*, H. Takaba*,
C. A. Del Carpio*, M. Kubo*, H. Kajiyama**, A. Miyamoto**Tohoku Univ., Japan**

Hiroshima Univ., Japan

We proposed a novel concept, “quantum-theory-based simulation with
precise characterization”, to sketch “real” models which are
indispensable to advance the understandings of materials theoretically.
To this end, novel spectroscopic characterization simulators and a novel
quantum-theory-based simulator based on our molecular dynamics
simulator and quantum chemical molecular dynamics simulator weredeveloped.
PDPp - 2

Luminous Efficacy Improvement by Selective
Suppression of Xe Ion Current in AC PDP
S. Sinha
Samtel Color, India

In AC Plasma Displays (PDP) ~ 70% of total discharge power goes to
Ne+ and Xe+ ions. The contribution of Xe+ ions to the ion heating loss is
1.5 to 5.5 times larger than Ne+ ion for 5 to 30% Xenon respectively.
PDPp - 3

Withdrawn

PDPp - 4

Influence of Substrate Temperature on Secondary
Electron Coefficient (γ) of MgO Protective Layer andDischarge Characteristics in AC PDP
S. H. Hong*, C. G. Son*, Y. J. Hong*, S. H. Cho*,Y. G. Han, S. H. Jeong*, S. H. Kim*, J. E. Nam*,
G. S. Cho*, B. H. Hong*, H. S. Uhm**, E. H. Choi**

Kwangwoon Univ., Korea**Ajou Univ., Korea

We have investigated the influence of the substrate temperature on thesecondary electron coefficient (γ) of MgO protective layer and discharge
characteristics in AC-PDP. The γ of MgO protective layer has beenmeasured by using Gamma Focused Ion Beam system by varying theglass substrate temperature from -20°C to 80°C. Also, the firing
voltages have been investigated with the above ranges of substratetemperatures for the 4-inch test panel in a thermo-hygrostat chamber.
93

Friday
PDPp - 5

December 5
Improvement of Discharge Characteristics in PDP
Using Lead-Free and Low Permittivity Rear Dielectric
Layer
T.-J. Kweon*,**, J.-W. Han*, H.-S. Tae*, J.-W. Nam**,
E.-G. Heo***

Kyungpook Nat. Univ., Korea**Samsung SDI, Korea

In this paper, the lead-free and low permittivity rear dielectric material(ZnO-B2O3 glass system) was adopted to remove the lead-oxide (PbO)
ingredient and improve the discharge characteristics, and the resultant
change in the discharge characteristics, such as the luminance, andluminous efficiency, address power consumption, were examined incomparison with that of the lead-oxide (PbO) containing glass systemrear dielectric material in the 50-in. HD PDP. In the rear panel fabricatedby the ZnO-based dielectric material, the luminous efficiency isimproved by about 7 %, and address power consumption is reduced by
20% or more.
PDPp - 6

Investigation on Address Discharge Characteristics
for R, G, and B Cells and Effects of Phosphor
Thickness on Address Discharge Delay in AC PDP
H. D. Park, H.-S. Tae, H.-S. Jung*, M. Hur*, M. Yoo*
Kyungpook Nat. Univ., Korea*Samsung SDI, Korea

In this paper, the address discharge characteristics are analyzed in thered, green, and blue cells, respectively by using the Vt closed-curve
method. To reduce the difference of the address discharge delay among
the R, G, and B cells, the effects of the phosphor thickness on theaddress discharge delay are examined. By controlling properly thephosphor thickness among the R. G. and B cells, the difference of theaddress discharge delay is observed to be minimized among the R, G,
and B cells.
PDPp - 7

Effect of a Pair of Annular Electrodes Buried in Rib
on Coplanar Discharge in AC PDP
M. Kawamoto, M. Nishitani*, M. Kawasaki**,Y. Yamamoto**, K. Tachibana
Kyoto Univ., Japan
Panasonic, Japan**Toray Ind., Japan*We estimated the performance of a new structure PDP cell with a pairof annular electrodes buried in the surrounding barrier ribs. The result
showed a higher luminous efficiency by about 60% than that of aconventional coplanar structure when auxiliary pulses are applied to theannular electrodes.

94Friday
PDPp - 8

December 5
Discharge Characteristics in Accordance with
Various Indium Tin Oxide (ITO) Sustaining Electrodes
in AC PDP
S. H. Cho, S. H. Hong, S. S. Lee, C. G. Son, Y. J. Hong,
Y. G. Han, G. C. Gwon, B. H. Hong, G. S. Cho,E. H. Choi
Kwangwoon Univ., Korea

We have measured the electron temperature, brightness and luminous
efficiency in accordance with various ITO electrode’s structures inalternating current plasma display panels. Also we have investigatedthe correlation of luminous efficiency with the density of excited Xe
atoms in the 1s5 metastable state and electron temperatures. It is foundin this study that the luminous efficiency is the highest for the fish-boned
electrodes among the other ITO electrodes. It is also found that the
maximum density of excited Xe atoms in the 1s5 metastable state forfish-boned ITO electrode is the highest to be 3.0 x 1013 cm-3 incomparison with those of 2.7 x 1013 cm-3 and 2.1 x 1013 cm-3,
respectively, for T and squared structures.
PDPp - 9

Effects of Aluminum Fence-Electrode Design on
Characteristics of AC PDP
S. Y. Lee, H. N. Choi, D. H. Lee*, Y.-S. Kim
Hongik Univ., Korea*Int. Metal Inst., Korea

Effects of aluminum fence-electrode design on performance of ac-PDP
were conducted. The aluminum electrode was prepared by chemicallyetching an aluminum foil bonded to a glass substrate via anodic
bonding process. Firing voltages, luminance and discharge
characteristics of test panels with various sustain gap were evaluated at
different Xe contents.
PDPp - 10

Effects of Xe Gas Composition Change in 4K Panel
D. H. Yoon, T. J. Jang, B. J. Chung, J. H. Choi, J. H. Lee,
H. M. Son, Y. K. Seong, W. S. Yoon, Y. K. Kim, H. Y. Ahn,
D. H. Choe
Samsung SDI, Korea

Although implementation of High Xe is regarded as one of the mostplausible solutions in term of the efficiency, not so many research
results have been reported regarding the high proportion of Xe in small
cell. In this paper, the characteristic of high Xe gas was evaluation in 4K
panel.

95

Friday
PDPp - 11

December 5
Optimization of He-Ne-Xe Gas Mixtures for High
Speed and Low Voltage Performance in AC PDPs
E. Y. Jung, K. J. Suh, J. C. Ahn, E. G. Heo, S. K. Jang*,
C.-S. Park*
Samsung SDI, Korea*
Kyungpook Nat. Univ., Korea

We investigated systematically discharge characteristics with various
gas conditions in He-Ne-Xe mixtures in order to realize a high speed
performance. As the helium gas increases from 0 to 50%, the address
delay (Tf) becomes shortened about 50nsec. As the gas pressure
decreases from 600torr to 300torr, the Tf and Ts are reduced about
71nsec, 65nsec respectively. From these results, we proposed the
optimization conditions for obtaining the high speed and low driving
voltage.
PDPp - 12

A Study on Temporal Dark and Bright Image Sticking
Characteristics under Various Panel Gas Pressuresin AC PDP
J. H. Kim, C.-S. Park, H.-S. Tae
Kyungpook Nat. Univ., Korea

The influences of the temporal dark and bright image sticking were
investigated under the various panel working gas pressures in the acPDP. To study the temporal dark and bright image sticking phenomena
for various panel gas pressures, the differences in the displayed
luminance, IR emission profile, and disappearing time were measured.
With a decrease in the working gas pressure, the temporal dark andbright image sticking were reduced.
PDPp - 13

Explanation for Wall Charge Leakage in PDP
T. Kurai, Y. Kim
Samsung SDI, Korea

We derived time dependent function of Wall charge voltage by using
Poisson-Boltzmann equation. We compared temperature dependenceof Wall Charge Leakage estimated by our theory to that of measured
value. Then we gave the explanation of the cause of temperaturedependence of Wall Charge Leakage.
PDPp - 14

Design of Erase Waveform for Stabilizing Reset
Discharge in Sustain Gap of 200 µm
S. H. Yoon, C. S. Min, J. H. Seo
Univ. of Incheon, Korea

In a 200µm gap structure a very unstable discharge is occurred. Basedon the Vt close curve, the unstable discharge is analyzed at various
conditions. By reducing the voltage level of the last sustain pulse, thedischarge during the erase ramp period is stabilized.

96Friday
PDPp - 15

December 5
Driving Characteristics of Negative Waveform in AC
PDPs during Reset and Address Periods
C. Eom, H. Lim, J. Lee, H. Park*, B. Kong*, S. Moon*,
J. Kang
Dankook Univ., Korea*LG Elect., Korea

Comparative experiments were performed with the 42-inch XGA PDP
module. The negative waveform improved contrast ratio about 15.4 ~22.5 % than the positive waveform. In address period, the formative
time delay (= Tf) of negative waveform was about 22.7 % faster thanthat of positive waveform.
PDPp - 16

Effects of Initial Wall Charge Distribution in Reset
Period on Wall Voltage Variation in Address Period in
AC PDP
B.-T. Choi, H.-S. Tae
Kyungpook Nat. Univ., Korea

It has been known that the wall voltage distribution is varied dependingon the applied voltages during an address period, thus causing thedeterioration of address delay. To investigate the relation between thewall voltage variation during the address period and the initial wallcharges accumulating during the reset period, the wall voltage variation
is examined relative to the initial wall charge conditions by using the Vt
closed curve. It is found that the applied voltage levels for minimizing
the wall voltage variation depends on the initial wall charge condition.
PDPp - 17

Modified Reset Waveform for Stable Address
Discharge under Variable Ambient Temperature in
AC PDP
S.-K. Jang, H.-S. Tae
Kyungpook Nat. Univ., Korea

It has been known that the address discharge delay time during an
address period strongly depends on the wall charge leakage. It wasobserved that the wall charge leakage phenomenon during an addressperiod was related to both the ambient temperature and the electric field
between the address and scan electrodes. The wall charge leakage
was increased with an increase in the voltage difference between theaddress and scan electrodes. Base on the experimental observation,
the modified reset waveform with multi-negative falling level (Vnf) is
proposed to produce the stable address discharge under variableambient temperature.

97

Friday
PDPp - 18

December 5
A Novel Driving Waveform for Improving AddressTime Lag in PDP
B.-H. Chen, C.-Y. Hsiung, J.-K. Ye
Nat. Dong-Hwa Univ., Taiwan

We proposed a new waveform to improve the address time lag. Eachline scan waveform has different applied voltage having progressively
increased pulse height instead of conventional all line with constantscan voltage. Our results show address pulse width can reduce from
3us to 1us by improvement of time lag.
PDPp - 19

Improvement of the Luminance with a New Single
Sustain Waveform in AC PDP
W. H. Park, H. M. Lim, J. Y. Lee*, J. Kang
Dankook Univ., Korea
Myongji Univ., Korea*

To improve the luminance in ac PDP, a new single sustain waveformwith auxiliary address pulse was proposed. The new single sustain
waveform were examined with 2-dimensional fluid code and related
experiments with the 42-inch XGA PDP module was performed. The
luminance of proposed single sustain waveform was improved morethan 2 times of the luminance of general single sustain waveform.
PDPp - 20

Adaptive Address Energy Recover Circuit for
Reducing Address Power in Color PDPs
X. N. Zhang, C. L. Liu, Z. H. Liang, X. L. Ding*
Xi’an Jiaotong Univ., China*
IRICO Group, China

An adaptive address energy recovery circuits (AAERCs) is proposed
after analyzing the address power of other address methods. AAERCs
can change the work mode in one subfield according to calculating
result of address power to get the lowest address power for any picturescomparing with other address methods.
PDPp - 21

Withdrawn

PDPp - 22

Laser Patterning of Rectangular-Shaped ITO
Electrode for High Luminous Efficient AC PDP
Z. H. Li, S. H. Im, E. S. Cho, S. J. Kwon
Kyungwon Univ., Korea

In this paper, a Q-switched Nd:YVO4 laser was used to fabricate therectangular-shaped ITO electrodes of high efficient AC PDP withdifferent scanning speed and repetition rate. The results showed thatthe optimized electrode was obtained when the scanning speed was
300 mm/s and the repetition rate was 20 kHz.

98

Friday
PDPp - 23

December 5
Addressable Coplanar Electrodes Microplasma
Display Devices
L. G. Meng, H. F. Liang, Z. H. Liang, C. L. Liu, H. Wang,
Y. J. Zhang
Xi’an Jiaotong Univ., China

Arrays of coplanar electrodes microplasma devices have been
fabricated and operated in neon pressures. The fabrication processes isvery simple and the uniformity is developed. The experimental results
show that the current-voltage characteristics exhibit positive differential
resistance and the devices would be the candidates of large
microplasma arrays.
PDPp - 24L

Effect of Slow-Slope-On Overlap-Scan Method in AC
PDP
T. G. Kim, B. H. Lim, D. H. Lee
Kyungpook Nat. Univ., Korea

A AC-PDP driving method was proposed to reduce the address period.
The overlap-scan can reduce the address period. However, this method
has a narrow address voltage margin compared with conventional scan.
In this paper, Slow-Slope-On overlap-scan is presented. The proposed
method allows wider address voltage margin than conventional overlapscan.
PDPp - 25L

Numerical Calculation of Escape Factor of 147nm
Resonance Radiation Emitted by Xe*(3P1) in a Ne-Xe
MixtureN. Minagawa
Pioneer, Japan

In a PDP discharge simulation, escape factor is usually used to accountfor the imprisonment of 147nm resonance radiation emitted byXe*(3P1). At present, escape factors are known for 2 geometries,
infinite slab and infinite cylinder. In this work, numerical calculation of
escape factor is studied for an arbitrary geometry.
PDPp - 26L

A Reconstruction Method of Pseudo ThreeDimensional Distribution of Excited Atom Density ina PDP Cell from Two-Dimensional Projections
T. Sakai, K. Tachibana*Display Res. Labs., Japan*Kyoto Univ., Japan

A 3D observation of excited atoms density in a unit cell is important for
improvements of the efficacy of PDP. We have succeeded on
measurement of Xe* density with special panels. In this paper we
proposed a simple method for pseudo 3D representation of the density
and obtained reasonable results.

99

Friday
PDPp - 27L

December 5
Direct Observation of Vacuum Ultraviolet Radiationfrom AC-PDPs with Narrow Sustaining ElectrodeF. Xing, G. Uchida, N. Awaji, H. Kajiyama, T. Shinoda
Hiroshima Univ., Japan

We study experimentally AC-PDP with the narrow sustaining electrode(WITO) in high Xe contents. The specialized-PDP with narrow WITO
achieves high luminous efficacy. The VUV measurement also showsthat narrow WITO leads to strong excimer radiation.
PDPp - 28L

Cathode Luminescence Study of MgO
M. Kitagaki*,**, C. L. Wang*,***, N. Ding*, X. Y. Zhang*,***,
G. Uchida*, S. L. Wu***, T. Shinoda*, H. Kajiyama**Hiroshima Univ., Japan**

Tateho Chem. Inds., Japan***Key Lab. for Physical Elect. & Devices of the Ministry of

Education, China
A cathode luminescence spectroscopy is applied to discuss theelectronic properties of MgO. The measurements at various
temperatures below 300 K suggest that the UV luminescence peaked at
240 nm is due to the exciton formation.
PDPp - 29L

Cathode Luminescence Study of SrO
H. Kajiyama, G. Uchida, T. Akiyama*, M. Kitagawa*,
T. Shinoda*
Hiroshima Univ., Japan*Advanced PDP Dev. Ctr., JapanA cathode luminescence spectroscopy is applied to discuss theelectronic properties of SrO thin film. The measurements at various
temperatures below 300 K suggest that the UV luminescence peaked at
245 nm is due to the exciton formation.
PDPp - 30L

Discharge Voltage of PDPs with Reactive Protecting
Layer
T. Yano*,**, G. Uchida**, K. Uchida*, N. Awaji**,
T. Shinoda**, H. Kajiyama***

ULVAC, Japan**Hiroshima Univ., Japan

Plasma display panels are manufactured in a vacuum condition. As aprotecting layer, MgO, CaO, SrO and SrCaO with various compositions
are used. It is demonstrated that the panels processed in vacuum
shows a lower discharge voltages and higher luminous efficacy
compared with the conventional ones.

100Friday

December 5

13:20 - 14:40

Room 201

PDP3: Protective Layer (1)Chair:
Co-Chair:H. Tolner, South East Univ., China
H. Kajiyama, Hiroshima Univ., Japan

PDP3 - 1
13:20

A Computational Study on Protecting Layer of PDP:
Secondary Electron Emission Property and Surface
Structure
K. Serizawa*, I. Yamashita*, H. Onuma*, H. Kikuchi*,**,
M. Kitagaki**, A. Suzuki*, R. Sahnoun*, M. Koyama*,
H. Tsuboi*, N. Hatakeyama*, A. Endou*, H. Takaba*,
C. A. Del Carpio*, M. Kubo*, H. Kajiyama**, A. Miyamoto**Tohoku Univ., Japan
Hiroshima Univ., Japan**For designing the MgO protecting layer with high γ value, the geometricstructure of MgO surfaces, their electronic structures and γ values wererelationally studied by computational methods. On the irregular surface,undersaturated Mg atoms seem to work as electron traps which canincrease the γ value.
PDP3 - 2
13:40

MgO Sputtering Yields by Noble Gas Ions at
Relatively Low Injection Energies
S. Yoshimura*, K. Hine*, M. Matsukuma*, K. Ikuse*,
M. Kiuchi*,**, T. Nakao***, J. Hashimoto***, M. Terauchi***,M. Nishitani***, S. Hamaguchi**

Osaka Univ., Japan
AIST, Japan***Panasonic, Japan**

Sputtering yields of MgO by noble gas ions bombardment have beenobtained experimentally as functions of injection energy in a range ofrelatively low energies (<400 eV) with the use of a mass selected monoenergetic ion beam system. The results were also compared with thosefrom numerical simulations.
PDP3 - 3
14:00

Numerical Analysis of Density of Energy States forElectron Emission Sources in MgO
S. Ho, S. Nobuki, N. Uemura, S. Mori, T. Miyake,
K. Suzuki, Y. Mikami, M. Shiiki, S. Kubo*
Hitachi, Japan*
Hitachi ULSI Syss., JapanA thermal excitation and emission model and an analytical protocol areproposed to evaluate the density of energy states for multiple kinds ofelectron emission sources (EES) in MgO. In Si-doped MgO, theactivation energy and number of Si EES are calculated to be 770 meV
and 1.8 × 106 per cell.
101

Friday
PDP3 - 4
14:20

December 5
Influences of Wall Charges on Electron Emissions
from MgO Protective Layer
K. Yoshino*,**, T. Nagatomi*, Y. Morita**, N. Kosugi**,
T. Oue**, M. Nishitani**, M. Kitagawa**, Y. Takai**Osaka Univ., Japan**

Panasonic, Japan

Influences of wall charges on the statistical delay time of the discharge,
ts, were investigated. ts was smaller with positively increasing the wallcharges on the cathode side. This result strongly suggests that theelectric field induced in a MgO film on the cathode electrode affects theexoelectron emission.
----- Break -----

15:00 - 16:15

Room 201

PDP4: Protective Layer (2)Chair:
Co-Chair:G. Oversluizen, Philips Res. Labs., the Netherlands
M. Uchidoi, Panasonic, Japan

PDP4 - 1:
15:00

Invited Factors Affecting Emission of Exo-Electrons
from MgO Thin Films of AC PDPs
Y.-S. Kim, S.-H. Yoon
Hongik Univ., Korea

Factors affecting the exo-electron emission are analyzed experimentallyand theoretically. The factors include, sustaining pulses, wall charges,
and bias voltage. The experimental measurements have been
conducted using our experimental set-up developed and was analyzed
using various theoretical models.
PDP4 - 2
15:20

Analysis of Deterioration of Secondary Electron
Emission Coefficient of Protective Layers Formed by
Alkaline-Earth Oxides for PDPs
M. Sakai, S. Hatta, Y. Fukui, Y. Honda, M. Okafuji,
Y. Yamauchi, M. Nishitani, Y. Takata
Panasonic, Japan

We have analyzed the surface deterioration of a protective layer. The
value of γ decreases with the surface carbonation of the alkaline-earthoxides, because the carbonates have the large Eg and have the sharpband below the valence band, which result in the significant increase of
breakdown voltage.

102

Friday
PDP4 - 3
15:40

December 5
Effects of (MgxZn1-x)O Electron Emission Layer on
Firing Voltages of AC PDPs
S. G. Ahn, S. H. Yoon, Y. S. Kim
Hongik Univ., Korea

We explored a possibility of using (MgxZn1-x)O compound as electron
emission layer for ac-PDPs. The firing voltages and luminous efficiency
indicated that those properties can be improved significantly. This
demonstrates that the control of band gap energy is effective in inducing
secondary electron emission from Auger neutralization of Xe+.
PDP4 - 4L
16:00

High Resolution Microplasma Arrays Fabricated in
Aluminum Foil: Improved Device Performance in theMicrocavity and Microchannel Structure
K. S. Kim*, J. K. Yoon*, G. S. Heimberg*, S.-J. Park*,**,
J. G. Eden**Univ. of Illinois, USA**

Eden Park Illumination, USA

Addressable, self-assembled Al/Al2O3 electrodes have been fabricatedto the shape of microcavity and microchannel arrays. Improved
luminance and luminous efficacies have been observed with parabolic
cross-sectional Al2O3 microcavities. Precise control of the crosssectional geometry and surface morphology of the cavities within Al/
Al2O3 microplasma devices was achieved with electrochemical process.
----- Break -----

16:40 - 17:40

Room 201

PDP5: Fabrication
Chair:
Co-Chair:
PDP5 - 1:
16:40

K. W. Whang, Seoul Nat. Univ., Korea
R. Murai, Panasonic, Japan
Invited Ultra-Large Area Film Display by Plasma Tube
Array Technology
M. Ishimoto, H. Hiirakawa, K. Awamoto, K. Shinohe,
T. Shinoda
Shinoda Plasma, Japan

The plasma tubes array is expected to realize the next generation ofwall size film display. We had successfully developed a prototype film
display of 3m × 1m screen size which was consisted of 3 sub-modulesof 1m × 1m. The results of proto type will be discussed.

103

Friday
PDP5 - 2
17:00

December 5
A Comparative Study of Different Getter
Configurations on PDP Performances
M. Riva, A. Bonucci, S. Tominetti, C. Carretti, Y. Han*,
S. H. Hong*, E.-H. Choi*
SAES Getters, Italy*
Kwangwoon Univ., Korea

Different getter system configurations have been integrated into 6 inch
RGB plasma panels: the main operational parameters have been
compared with reference panels (with no getters), at different ageingtimes. Getter activity during PDP manufacturing is explained, on thebasis of contamination studies on each phase of the process flow.
PDP5 - 3
17:20

PDP Manufacturing System under Vacuum Condition
K. Uchida*, G. Uchida**, T. Yano*,**, H. Kajiyama**,
T. Shinoda**
ULVAC, Japan*Hiroshima Univ., JapanA PDP manufacturing method suitable for energy and cost savings isdemonstrated. In themethod, the panel processing after MgO
deposition and panel sealing are all completedunder a controlled
vacuum circumstance. As a result, the shorter aging time forstabledischarge and the lower firing voltage is successfully achieved.

Author Interviews
17:40 – 18:40

Sponsor:Plasma Display Technical Meeting

PDP International Forum ’08
Saturday, December 6, 2008
10:30–16:30
Toki Messe Niigata Convention Center(IDW ’08 Venue)
For further information, visit www.pdptm.org/forum/104Thursday

December 4Workshop on
EL Displays and Phosphors
Thursday, December 4
9:00 - 12:00

Exhibition Hall B

Poster PHp: Phosphors
PHp - 1

Yellow-Emitting Eu2+-Doped Sr-Borate Phosphors for
White Light Emitting Diodes
W. S. Song, D. K. Lee, J. U. Kim, H. Yang
Hongik Univ., Korea

This work focuses on development of Eu2+-doped Sr-borate as ayellow-emitting phosphor and its application to white LED fabrication.
1300°C-fired Sr1.93B2O5:Eu0.07 was used for white LED fabrication.
Optical properties were evaluated, resulting in warm white withchromaticity coordinates of (0.340-0.372, 0.287-0.314) and CRI of 7577 under 5-40 mA forward currents.
PHp - 2

Intensely Red-Emitting in Novel
Na2Eu(WO4)1-x(MoO4)x(PO4) Phosphors for WL-LEDs
C.-H. Chiu, T.-M. Chen*, C.-N. Mo
Chunghwa Picture Tubes, Taiwan
Nat. Chiao Tung Univ., Taiwan*

The fundamental luminescence and chromaticity properties of a novel
class of red-emitting phosphors Na2Eu(WO4)1-x(MoO4)x(PO4) havebeen investigated. Under near-UV and blue light excitation the intensely
red-emitting of the tungsto-molybdate phosphors may serve as apotential candidate for white-light (WL) LEDs.
PHp - 3Synthesis and Photoluminescence Properties of
Chlorophosphate Phosphor for White Light-Emitting
DiodesH. S. Yoo, S. Vaidyanathan, S. W. Kim, J. Y. Han,
D. Y. Jeon
KAIST, Korea

Luminescence properties of Ba5(PO4)3Cl:Yb2+ phosphor were
investigated for white light-emitting diodes (LEDs) application. Broad
excitation and emission bands were observed due to 4f - 5d transitionsof Yb2+ ion. The non-radiative transitions between Yb2+ ions were
responsible for the electric dipole-dipole interaction between Yb2+ ions.

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PHp - 4

December 4
Preparation and Optical Characterization of Blue
Emission Phosphate Phosphor LiSrPO4:Eu2+ for
White LEDs
T. Ishigaki, T. Hatsumori, K. Uematsu, K. Toda, M. Sato
Niigata Univ., Japan

LiSrPO4:Eu2+ phosphor were prepared. Emission and excitation
spectra of the samples were investigated. LiSrPO4:Eu2+ and Eu, Mg codoped LiSrPO4 samples emitted purple (420nm) and blue (450nm),
respectively due to the structural difference of the crystal. The
LiSrPO4:Eu2+, Mg2+ can be potentially useful as a UV radiationconverting phosphor for light-emitting diodes.
PHp - 5Fabrication of Light Emitting Diode and theCharacteristic of Its Display Module
B. S. Park, S. W. Kim, S. G. Lee*, S. I. Son*, E.-T. Kim**,
C.-J. Kim
Univ. of Seoul, Korea*Pantech, Korea**

ETRI, Korea

The main goal of this work is advances in 1.0mm × 0.5mm lightemitting diode using AlInGaN cell structure and display module. In thefirst place, we proposed 200µm × 200µm cell structure using AlInGaN.
Secondly, we describe new type LED fabrication procedure and resultsof an examination include application.
PHp - 6

A Novel Broad Band Orange Red Emitting Phosphor
for Solid State Lighting
S. Vaidyanathan, S. W. Kim, H. S. Yoo, D. Y. Jeon
KAIST, Korea

A novel orange-red emitting phosphors Ca3-xEuxSi2O7 (x = 0 – 0.03, insteps of 0.05) have been synthesized. All the compositions showorange-red emission and the emission intensity is found to be maximum
for Ca2.985Eu0.015Si2O7 [~1.2 Vs CaS:Eu2+ (λexc = 400 nm)].
Ca2.985Eu0.015Si2O7 could find potential application as orange - red
phosphors for white LEDs.

106Thursday
PHp - 7

December 4
Temperature Dependence of Photoluminescecne
Spectroscopy and Thermoluminescence Property on
Eu-Doped BaMgAl10O17 and SrMgAl10O17
H. Tanno*,**, S. Zhang*,**, G. Uchida*, T. Shinoda*,
H. Kajiyama**

Hiroshima Univ., Japan**Dyden, JapanThe temperature dependence of photoluminescence spectroscopy andthermoluminescence property on BAM:Eu and SAM:Eu areinvestigated. Peak shift of PL spectroscopy on SAM:Eu is largely
observed between 50 and 300 K compared with BAM:Eu. The TL
results reveal that the states of europium occupied in BAM and SAM
should be different.
PHp - 8

Withdrawn

PHp - 9Ba4Gd6Si6O24F2:Tb Green Phosphor for VUVExcitation
A. Kobayashi, T. Kunimoto*, K. Ohmi
Tottori Univ., Japan*Tokushima Bunri Univ., Japan

A novel fluoroapatite-silicate phosphor Ba4Gd6Si6O24F2:Tb has been
proposed as a green phosphor for VUV excitation. It has been foundthat the low-temperature synthesis with an excess fluorine is essential
to maintain the efficient intensity of the excitation band lying below 200
nm. The currently obtained PLE intensity at 172 nm is about 95% of
Zn2SiO4:Mn.
PHp - 10Luminance Uniformity of Organic-Dye-Dispersed
Hybrid Inorganic Electroluminescent Device
Y. Noguchi, M. Kobayashi, S. Kawamura, Y. Masakura,
T. Tamura, T. Uchida, T. SatohTokyo Polytechnic Univ., Japan

Luminance, which creates problems in conventional dispersed-type
electroluminescent (EL) devices, and color purity are improved bydispersing organic dyes. Moreover, the luminance becomes uniform.
PHp - 11

Blue-Emitting Bi-Activated La2O3 Thin-Film
Electroluminescent Devices
K. Ueda, S. Matsui, H. Fukada, T. Miyata, T. Minami
Kanazawa Inst. of Tech., Japan

Blue-emitting TFEL devices fabricated using a La2O3:Bi thin film and a
thick BaTiO3 ceramic sheet have been newly developed. Two types of
TFEL devices were fabricated with or without a ZnS thin-film carrier
acceleration layer. A luminance of 46.9 cd/m2 was obtained in a TFEL
device fabricated with a ZnS thin-film layer.
107

Thursday
PHp - 12

December 4
Bendable Inorganic Thin-Film EL Devices Fabricatedon Sapphire Sheets
K. Sahara, H. Fukada, T. Miyata, T. Minami
Kanazawa Inst. of Tech., Japan

Inorganic TFEL devices were fabricated using an oxide phosphor
emitting layer prepared on a sapphire substrate with either an R- or Aplane lattice structure. Bendable and see-through Zn2Si0.6Ge0.4O4:Mn
TFEL lamps were demonstrated using a double-insulating-layer-typedevice fabricated on a R-plane sapphire sheet with a thickness ofapproximately 60 µm.
PHp - 13

Dispersed-Type Inorganic Electroluminescent Device
on Printed Conductive Polymer ElectrodeT. Homma, Y. Nakamura, S. Ohmura, T. Uchida, T. SatohTokyo Polytechnic Univ., Japan

Indium thin oxide (ITO) is used in many applications. However, sinceindium —one of its main ingredients— is a rare metal, reducing costs
and resource-saving methods need to be implemented. Therefore,
dispersed-type inorganic electroluminescent devices on printed
conductive polymer electrodes incurring low costs in the substitution of
ITO were examined.
PHp - 14Spectral Characteristics of Dispersion-Type
Inorganic EL Device Dispersed with Organic andInorganic Phosphors
N. Taguchi, T. Matsumura-Inoue*, Y. Uraoka**,
Y. Hasegawa**
Image Tech, Japan*Minerva Light Lab., Japan**Nara Inst. of S&T, Japan

We investigated changes of spectrum and luminance in inorganic EL
devices dispersed with inorganic phosphors, comparing with that of theorganic dye-dispersed inorganic EL. Reported here is that the spectralchange and increased luminance occur in the inorganic EL dispersedwith a green inorganic phosphor.

108

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PHp - 15

December 4Highly Thermal Stability of Europium(III) Chelate
Encapsulated by Sol-Gel Glass
T. Fukuda, S. Yamauchi, E. Kin, H. Ohara*, T. Yokoo*,
N. Kijima*, N. Kamata
Saitama Univ., Japan
Mitsubishi Chem. Group, S&T Res. Ctr., Japan*

Thermally stable europium(III) chelates has been achieved by coatingwith silica glasses via a low temperature sol-gel process. It was
revealed that the surface coating has a pronounced effect to suppress
the decrease in the photoluminescence quantum yield during thethermal treatment approximately 140 °C.
PHp - 16

Characterization of Phosphors Prepared byPlanetary Ball Milling
S. W. Choi, J. H. Shin, S. H. Hong
Seoul Nat. Univ., Korea

This study is focused on the photoluminescence properties of Eu2+doped CaAl2O4 obtained by Pechini and mechanical process. The
products prepared by Pechini process were ground using planetary ballmilling at intermediate stages. The morphology, size, and crystallinity of
the resulting particles were investigated, particularly focusing on therelations with PL properties.
PHp - 17Structural Properties of Coated Nanoparticles: theZnS/ZnO Nanostructure
P. Verma, A. Pandey
Allahabad Univ., India

The Production of undoped and doped nanosized semiconductor
nanostructures composed of a core of ZnO nanocrystals coated with a
ZnS layer has been attempted by using a method of chemical
precipitation at room temperature. These doped nanosized
semiconductor nanostructures can form a new class of luminescentmaterials for various applications. The particle size was estimated to be
6nm from Transmission Electron Microscopy (TEM) and calculated as 6
± 0.4nm from peak broadening of the X-ray diffraction (XRD) pattern.
This treatment is suggested to improve various properties of
optoelectronically valuable ZnO/ZnS nanostructures.

109Thursday
PHp - 18

December 4
The Variation of the Enhanced Photoluminescence
Efficiency of Sol-Gel Derived Y2O3:Eu3+ Films withThickness to the Photonic Crystal Layer
J. R. Oh, H. K. Park, J. H. Park, Y. R. Do
Univ. of Kookmin, Korea

A sol-gel spin coating method was used to fabricate Y2O3:Eu3+ thin-film
phosphors on nanohole-type 2-D photonic crystal layers with 580 nm
pitches and a non-PC substrate in an attempt to improve the efficiencyof light extraction. The optical and structural properties of Y2O3:Eu3+
thick films were characterized by SEM, PL.
PHp - 19

Enhanced Photoluminescence Properties of
SrGa2S4:Eu2+ Thin-Film Phosphors on 2D Photonic
Crystal Substrate
K. N. Lee, K.-Y. Ko, J. H. Moon, Y. R. Do
Univ. of Kookmin, Korea

In this study of SrGa2S4:Eu2+ thin-film phosphors, SrGa2S4:Eu2+ thinfilm phosphors were deposited through an RF-magnetron sputtering
process. An improved photoluminescence intensity of SrGa2S4:Eu2+
thin-films were obtained with 2-dimensional photonic crystal layer ofvarious heights. The properties of films are characterized anddiscussed.
PHp - 20

Dependence of Structural and Luminescent
Characteristics of SrGa2S4:Eu Thin Film Phosphorson Preparation Conditions
K. Terada, H. Kominami, T. Seino*, Y. Arai*, Y. Nakanishi,
Y. Hatanaka**, K. Hara
Shizuoka Univ., Japan*Japan Steel Works, Japan**Aichi Univ. of Tech., Japan

Green-light-emitting SrGa2S4:Eu2+ thin films were successfully
prepared on glass substrates by EB evaporation and post-laserannealing at 500°C. The structural and cathodoluminescence
properties varied depending on the annealing conditions, which was
discussed in view of the application for FEDs.

110

Thursday
PHp - 21

December 4
Substrate Bias Voltage Influence on Optical and
Structural Characteristics of Zinc Oxide Films
Prepared by Radio Frequency Magnetron Sputtering
C. Li, T. Matsuda, T. Hiramatsu, H. Furuta,
T. Kawaharamura, M. Furuta, T. Hirao
Kochi Univ. of Tech., Japan

Zinc oxide thin films were prepared on quartz glass using radio
frequency magnetron sputtering. It was found that the crystallinities of
ZnO films were deteriorated with increasing bias power. The
photoluminescence properties of the ZnO films were significantly
influenced by substrate bias voltage and thermal annealing.
PHp - 22L

Novel Eu2+ and Ce3+, Li+-Doped Sr3Al2O5Cl2
Phosphors for White LEDs
X. M. Zhang, N. S. Choi, B. W. Park, K. W. Park,
K. I. Seo, J. H. Park, J. S. Kim
Pukyong Nat. Univ., Korea

Sr3Al2O5Cl2 doped with Eu2+ and Ce3+,Li+ phosphors weresynthesized by solid-state reaction. Three white LEDs combining 420
and 464 nm emitting chip with single Sr3Al2O5Cl2:Eu2+ phosphor andmixture of Sr3Al2O5Cl2:Eu2+ and (Ba,Sr)2SiO4:Eu2+ phosphors havebeen fabricated. The temperature dependence on PL intensity and the
optimum doping concentration were studied.
PHp - 23L

White-light-emitting T-phased (Ba,Ca)2SiO4:Eu2+,
Mn2+ Phosphor
N. S. Choi, B. W. Park, K. I. Seo, J. H. Park, X. M. Zhang,
J. S. Kim, S. H. Lee*, K. W. Park*, S. D. Jeon*
Pukyong Nat. Univ., Korea*Lucimea, Korea

The emission spectra of T-phased Ba1.2Ca0.64SiO4:0.1Eu2+, 0.06Mn2+
phosphor shows the red from Mn2+ together with the blue-green from
Eu2+. The fabricated white-light emitting diode using a 420-nm-emissive
chip with the phosphor shows a warm white color with the color
temperature of 4500 K and the high color rendering of 84.
PHp - 24L

Energy Transfer in Single-Phase Two Color Emitting
Ca3Mg3(PO4)4:Eu, Mn Phosphors
K. H. Kwon, W. B. Im*, H. S. Yoo, D. Y. Jeon
KAIST, Korea*Univ. of California, Santa Barbara, USA

In this study, the single-phase emitting Ca3Mg3(PO4)4:Eu,Mn phosphor
for white light-emitting diodes is reported. The luminescent properties
and structural information of phosphor samples are investigated.
Additionally, the energy transfer from Eu to Mn can be expected in
Ca3Mg3(PO4)4:Eu,Mn in terms of PL spectra, energy transfer efficiency
and decay time.
111

Thursday
PHp - 25L

December 4
Color Tunability of Blue Spectral Emission of
Sr3MgSi2O8:Eu2+ Phosphor via Ba Substitution for
the Application to CCFLs
H. J. Park, W. B. Im, H. S. Jang, H. S. Yoo, D. Y. Jeon
KAIST, Korea

We have enhanced color rendering property of a blue emitting phosphor
Sr3MgSi2O8:Eu2+ (SMS) using incorporation of Ba ion in Sr site of hostlattice. Ba2+ addition to SMS:Eu2+ phosphor caused shifting of PL
emission peak. This optical properties of (Sr1-xBax)3MgSi2O8:Eu2+ isdiscussed.
PHp - 26L

Photoluminescence of SrGa2S4:Bi Phosphors
S. Okamoto, T. Sakai, K. Tanaka
NHK, Japan

Bi-activated SrGa2S4 (SrGa2S4:Bi) phosphor exhibits green
luminescence with a peak wavelength of 533 nm and a full width half
maximum (FWHM) of 55 nm. As SrGa2S4 is co-activated by Bi3+ andMn2+ ions, the excitation band around 400 nm is enhanced relative tothat around 300 nm.
PHp - 27L

Synthesis of La2O2S:Eu by Citric Acid Gel Method- Dependence of Properties on Pre-firing Condition S. Yamashita, H. Kominami, Y. Nakanishi, K. Hara,
Y. Shimomura*, M. Yoshino*
Shizuoka Univ., Japan*Mitsubishi Chem. Group, S&T Res. Ctr., JapanWhite LED is expected as a lighting of the next generation. It issuggested that La2O2S:Eu shows good luminescence in the nearultraviolet excitation. In this study, synthesis of La2O2S:Eu using the
citric-acid-gel method has been studied. As the result, particle size canbe controlled by changing pre-firing temperature.
PHp - 28L

Direct Deposition of Silicon Quantum Dots
Embedded Silicon Nitride Film on Plastic Substrateby Catalytic CVD
K.-M. Lee, T.-H. Kim, J.-D. Hwang, S. H. Jang,
K. Y. Jeong, M. S. Han, W.-S. Hong
Univ. of Seoul, Korea

We fabricated silicon quantum dots embedded in silicon nitride filmusing catalytic chemical vapor deposition process at low temperature.
Formation and size of silicon quantum dots in silicon nitride film wereanalyzed by photoluminescence spectroscopy. Silicon quantum dots of
5 nm in this sample were confirmed by transmission electron
microscopy.

112

Thursday
PHp - 29L

December 4
Effect of Pressure on Firing of ZnCdO Powder for
Preparation of Multi-Layered ZnO/ZnCdO Particles
T. Sano, H. Kominami, Y. Nakanishi, K. Hara
Shizuoka Univ., Japan

Liquid phase synthesis of ZnCdO powder for preparation of multilayered ZnO/ZnCdO particles has been investigated. Lower
temperature process is necessary for the preparation of multi-layered
particle. From the result, the powder with high pressured firing showed
highly effective not only defect-suppression but also improvement of
exciton emission.
PHp - 30L

Ultraviolet Light Emission from DC EL Device Sol-Gel
Derived ZnO Nanocrystals
H. Takeuchi, D. Yamaguchi, T. Toyama, H. Okamoto
Osaka Univ., JapanWe demonstrate a UV DC EL device utilizing sol-gel derived ZnOnanocrystals (NCs) with a crystallite size of about 10 nm. PL spectrafrom ZnO NCs showed near band edge emission and green emission.
The EL emission was observed at over 7 V.
PHp - 31L

Optical Properties of the (Y,Gd)BO3:Eu3+ Phosphor
Coated with Al2O3, SiO2 and ZnO for a Plasma
Display Panel
J. H. Seo, S. M. Lee, S. H. Sohn
Kyungpook Nat. Univ., Korea

The surface of (Y,Gd)BO3:Eu3+ phosphor was coated with SiO2, Al2O3
and ZnO nano-particles in a simple surface treatment way, a kind of themodified sol-gel method. It was found that the surface coating of red
phosphors with nano-particles leads to an increase in the luminanceintensity of the PDP.
PHp - 32L

Photoluminescence in YPO4:Mn2+ Codoped with
Various Tetravalent Cations Excited by VUVRadiation
M. Kitaura
Fukui Nat. College of Tech., Japan

Experiment and calculation have been performed to clarify the effect oftetravalent ions addition on the intensity of the photoluminescence (PL)from Mn2+ ions in YPO4. The PL band at 482 nm was most strongly
observed in the addition of Zr4+ ions under excitation with VUV photons
at 147nm.

113

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December 4

PHp - 33L

Optical Properties of Red-Emitting Thin Film
Phosphor Sputtered on Silica Microsphere Photonic
Crystal Layer
J. Y. Han, H. S. Yoo, D. Y. Jeon
KAIST, Korea

To improve extraction efficiency from sputtered YVO4:Eu3+ thin film
phosphors silica photonic crystal layer (PCL) was introduced into thinfilm phosphor layer. Optical properties of sputtered YVO4:Eu3+ thin films
with silica PCL were investigated via photoluminescence (PL) andoptical transmittance and the enhanced PL intensities were obtained.
----- Lunch -----

13:20 - 14:50

Room 302

PH1: Phosphors for LEDs
Chair:
Co-Chair:PH1 - 1:
13:20

K.-S. Sohn, Suchon Nat. Univ., Korea
R. J. Xie, NIMS, Japan
Invited Progress in Nitride and Oxynitride Phosphors
H. Yamamoto, K. Uheda*
Tokyo Univ. of Tech., Japan*Mitsubishi Chem. Group, S&T Res. Ctr., Japan

Nitride and oxynitride phosphors have been actively investigatedbecause they have optical and chemical properties well suited to white
LED application. Recent achievement of these phosphors is reviewed
mainly for LED backlighting and high-output LEDs. Application ofcathode-ray or UV excitation is discussed referring to a successful
example of AlN:Eu,Si,O.
PH1 - 2
13:50

Luminescence Properties of Eu2+-Doped GreenEmitting Sr-Sialon Phosphor and Its Application in
White LEDs
Y. Fukuda, I. Mitsuishi, S. Nunoue
Toshiba, JapanA new green-emitting phosphor Sr3Si13Al3O2N21:Eu2+ that can be
excited by blue emission has been developed. It shows a highly efficientgreen luminescence and has small thermal quenching. White LEDs areprepared using this phosphor, assorted with red-emitting phosphor.
Luminous efficacy reached 62 lm/W, with Ra value of 87.

114

Thursday
PH1 - 3
14:10

December 4
Three Band White Light from the White LEDs Using
Inorganic Phosphor and Semiconducting
Nanocrystal
H. S. Jang, H. Yang*, B. H. Kwon, S. W. Kim, J. Y. Han,
K. H. Kwon, H. J. Park, D. Y. Jeon
KAIST, Korea*
Hongik Univ., Korea

Three band white light-emitting diodes (LEDs) were fabricated by
combining a blue LED with both a greenish-yellow-emitting phosphor
and red-emitting quantum dots (QDs). The CdSe/ZnSe showedstronger PL intensity than CdSe QDs, and this strong emission
contributed to the improvement of luminous efficiency of QD-assisted
phosphor-converted white LEDs.
PH1 - 4
14:30

Luminescent Characteristics of Alkali-Earth OrthoSilicate Phosphors Doubly Doped with Terbium andEuropium
R. Hiramatsu, Y. Fukuda, F. Aiga, K. Ishida, N. Matsuda,
H. AsaiToshiba, Japan(Sr,Ba)2SiO4 phosphors doubly doped with Tb3+ and Eu2+ wereprepared by a solid-state reaction. (Sr,Ba)2SiO4:Tb, Eu had
characteristic luminescent spectra excited by 390nm. These spectra
were in the broadband spectrum assigned to Eu2+ and the narrowband
spectrum assigned to Tb3+. We considered these spectra were
attributable to the Eu2+-Tb3+ energy transfer.
----- Break -----

15:00 - 16:30

Room 302

PH2: Phosphors for PDPs
Chair:
Co-Chair:PH2 - 1:
15:00

T. Hisamune, Kasei Optonix, Japan
N. Matsuda, Toshiba, Japan
Invited High Performance Phosphors for Advanced
PDPs
Y.-C. Kim, J. H. Song, J. H. Kim, S. Y. Kwon, H. D. Lee,
M. R. Song, I. K. Choi, G. J. Heo, D. H. Park, Y. C. You,D. S. Zang
Samsung SDI, Korea

New phosphors enabled the commercialization of 3D/2D switchable
plasma display panel (PDP) televisions and brought a significant
increase in luminescent efficiency of PDP. We present basic
requirements of high performance phosphors for the 3D PDP and forthe high efficient PDP, and describe the optical property of developed
phosphors.
115

Thursday
PH2 - 2
15:30

December 4
Nano-Structured BAM Blue with High Aging
Resistance : Magnetoplumbite Phase on β-Alumina(MP on β)T. H. Kwon, G. J. Kim*, K. H. Kim*, W. K. Oh*,
N.-H. Cho**, S.-J. Hwang**, S.-W. Kim**
Daejoo Elect. Materials, Korea*LG Chem. Res. Park, Korea**Inha Univ., Korea

The nano-structured type of blue BAM with a configuration ofmagnetoplumbite phase onto β-alumina-BAM, coined as “MP on β” isproposed to overcome the notoriously poor thermal-stability in its
emission characteristics. Its fine structure, investigated by HRTEM, iswell correlated with the observed emission behaviors after thermallydegrading treatment.
PH2 - 3
15:50

Excitation Energy Transfer by Vacuum Ultra Violet
Excitation in Eu-Doped BaMgAl10O17 and NaAl11O17:
a Theoretical Study
H. Onuma, H. Tanno*, I. Yamashita, K. Serizawa,A. Suzuki, R. Sahnoun, M. Koyama, H. Tsuboi,
N. Hatakeyama, A. Endou, H. Takaba, C. A. Del Carpio,
M. Kubo, H. Kajiyama*, A. Miyamoto
Tohoku Univ., Japan*
Hiroshima Univ., Japan

We theoretically investigated the excitation energy transfer in
BaMgAl10O17:Eu2+ and NaAl11O17:Eu2+ materials. Our results
suggested that the excitation energy with exchange interaction would betransferred though conduction plane in BaMgAl10O17:Eu2+ and spinel
block in NaAl11O17:Eu2+. The structural defects forming localized levels
would decrease the efficiency of energy transfer.
PH2 - 4
16:10

Study of Eu Luminescent Centers Located Near theSurface of BAM Phosphors by Conversion Electron
Yield XAFS
T. Honma, T. Kunimoto*, T. Hiragi*, H. Tanno**,H. Kajiyama**, A. Kobayashi***, S. Orita***, K. Ohmi***Japan Synchrotron Radiation Res. Inst., Japan*
Tokushima Bunri Univ., Japan**
Hiroshima Univ., Japan***Tottori Univ., Japan

Conversion electron yield (CEY)- and X-ray fluorescence yield (XFY)XAFS measurements have been performed for Eu luminescent centersof BAM thick films. The ratio of the valence state of Eu ion near thesurface and the internal bulk of BAM crystal are estimated from Eu-L3
edge CEY- and XFY-XANES spectra, respectively.
----- Break ----116

Thursday

December 4

16:40 - 18:15

Room 302

PH3: Phosphors in EL and General
Chair:
Co-Chair:PH3 - 1:
16:40

D. Y. Jeon, KAIST, Korea
T. Miyata, Kanazawa Inst. of Tech., Japan
Invited Search for Phosphors for Use in Displays andLightings Using Genetic Algorithm Assisted
Combinatorial Chemistry
K.-S. Sohn
Suchon Nat. Univ., Korea

A multi-objective genetic algorithm-assisted combinatorial materials
search (MOGACMS) strategy was employed to develop new phosphorsfor use in display applications. We identified several new phosphors,with improved luminance and reliable reproducibility.
PH3 - 2:
17:10

Invited Required Characteristics of Phosphors for
CCFLs
T. Kusunoki, T. Igarashi
Sony, JapanThe LED and CCFL are popular light-sources for backlights in LCDs.
Recently the LED backlight system is studied actively. However, the
CCFL is still the most popular light-source in the market. In this paper
the desirable characteristics for phosphors, which are the main
component of the CCFL, will be discussed.
PH3 - 3
17:40

Crystallographic and Electroluminescent
Characteristics of (Ba,Sr)2ZnS3:Mn Thin Film
DevicesT. Sasaki, T. Kotani, Y. Miyamoto, K. Ohmi
Tottori Univ., Japan

A novel solid solution compound of (Ba,Sr)2ZnS3 having the Ba2MnS3type orthorhombic structure has been developed. (Ba,Sr)2ZnS3:Mn thinfilms with a single crystal phase have been also successfully preparedby electron-beam deposition. A obtained luminance is 320 cd/m2 at 1
kHz, and the CIE color coordinates (x, y) are (0.59, 0.41).
PH3 - 4L
18:00

High-Luminance from Localized Emission Center
Phosphor in Powder-Type EL Devices
T. Higuchi, Y. Matsuua, T. Muramatsu, N. Miura*
Kansai Paint, Japan*
Meiji Univ., Japan

High luminance EL was obtained from the powder phosphor having a
localized emission center. The phosphor powders less than 1 µm
diameter were dispersed in resin binder. Insulating layers were formed
with ITO fine particles encapsulated with insulating material. Luminancelevel is over 1000 cd/m2 at 1 kHz.
Author Interviews
18:00 – 19:00
117

Friday

December 5
Friday, December 5

10:40 - 12:20

Room 302

FED2/PH4: Phosphors for FEDs
Chair:
Co-Chair:
FED2/
PH4 - 1:
10:40

M. Takai, Osaka Univ., JapanS. Okamoto, NHK, Japan
Invited Development of FEDs with New Blue
Phosphor
Y. Yasuoka, M. Kitada, Y. Obara, T. Mori, Y. Naito,
K. TamuraFutaba, Japan

This paper reports AlN:Eu suitable for forming highly fine dots of the
FED discussed together with characteristics of the FED panel using it.
With the Y2SiO5:Ce used in the FED, there are some issues. To solve
those issues, the use of the AlN:Eu was discussed for the FED.
FED2/
PH4 - 2:
11:10

Invited Luminescence and Structure of Europium
Doped Aluminum Nitride Phosphor
T. Takeda, N. Hirosaki, R.-J. Xie, K. Kimoto, M. Saito*
NIMS, Japan*Tohoku Univ., Japan

Eu doped AlN shows a blue luminescence by UV and electron
excitation. However, there is no space for large europium cation
occupation in wurtzite AlN structure. TEM measurement showed Eu
formed the layer structure in wurtzite AlN structure. The Eu coordination
environment corresponded to the luminescence property.
FED2/
PH4 - 3
11:40

Preparation of Sulfide Phosphors Using Liquid
Phase Process
H. Kominami, Y. Nakanishi, K. Hara
Shizuoka Univ., JapanThe synthesis process of sulfide phosphors using liquid phase reaction
was investigated to aim at fine particle. The powders fired above 700°C
were determined at SrGa2S4 single phase by X-ray diffraction
measurement, and the obtained phosphor showed green emission of
SrGa2S4:Eu excited by 325 nm of He-Cd laser and EB excitation.

118

Friday
FED2/
PH4 - 412:00

December 5
Undoped ZnO Phosphor with High Luminescence
Efficiency Grown by Thermal Oxidation
Z. Y. Xiao, M. Okada, M. Ichimiya*, T. Itoh*, G. Han,
Y. Neo, T. Aoki, H. Mimura
Shizuoka Univ., Japan*Osaka Univ., Japan

A novel phosphor with microcavity resonator was proposed. Various
ZnO morphologies with hexagonal cross section were fabricated by athermal oxidation method. Whispering gallery resonance modes
produced in ZnO hexagonal micarocavity were assumed to provide a
qualitative explanation for the observation of enhancement green
emission.
----- Lunch ----Author Interviews
17:40 – 18:40

Supporting Organizations:
The 125th Research Committee on Mutual Conversion between Lightand Electricity, Japan Society for Promotion of Science
Phosphor Research Society, The Electrochemical Society of JapanEVENING GET-TOGETHERWITH WINE
Tuesday, December 2, 2008
18:00–20:00
Room “Houou” (30F)
Hotel Nikko Niigata(Sponsored by Merck Ltd., Japan)
See page 9 for details
119Friday

December 5

Workshop on
Field Emission Display and CRT
Friday, December 5
9:00 - 9:10

Room 302

Opening
Opening Remarks
9:00
M. Takai, Osaka Univ., Japan
9:10 - 10:10

Room 302

FED1: FEDs
Chair:
Co-Chair:F. Wakaya, Osaka Univ., Japan
M. Nakane, Muroran Inst. of Tech., Japan

FED1 - 1
9:10

Characteristics of CNT-FED for Color CharacterDisplays
H. Kurachi, S. Uemura, J. Yotani, T. Nagasako, T. Nakao,
M. Ito, A. Sakurai, K. Sato, K. Fukuda*, Y. Saito**
NORITAKE, Japan*Fuji Elec. Syss., Japan**Nagoya Univ., Japan

High-luminance CNT-FED character-displays using simple line-ribstructure were performed. One display-panel had 48x480-dots and the
sub-pixel pitch was 1mm. Another panel had 32x256-color-pixels, andthe sub-pixel size was 0.6mmx1.8mm. The power consumption wasless than 10W at character-displaying module. It should be useful for
public display even under emergent no-power condition.
FED1 - 2
9:30

Ultra-High Luminance FED
M. Nagao, T. Yoshida, K. Nakamura*, Y. Marushima*,
M. Taniguchi*, S. Itoh*, S. Kanemaru
AIST, Japan*Futaba, JapanFirst prototype of ultra-high luminance FED is fabricated in which
Spindt-type FEA, memory capacitor, and three TFTs are integrated.
The luminance of 1700 cd/m2 is demonstrated even under low anodevoltage (1.5 kV). The ultra-high luminance FED is expected for
applications such as daylight readable display.

120

Friday
FED1 - 3
9:50

December 5
15-in. Dynamic Field Emission BLU for LCD
J.-W. Jeong, D.-I. Kim, J.-T. Kang, J.-S. Kim, Y.-H. SongETRI, Korea

The 5-inch 12-blocks Local Dimming Field Emission Lamp wasdemonstrated at the last symposium.[1] Now, we introduce the 15-inch
dynamic CNT FEL for LCD BLU. The basic structure of 15-inch FEL
was not changed from 5-inch panel. The lithography process was
excluded and the screen printing method was mainly used.
FED1 - 4

Withdrawn

FED1 - 5L

Withdrawn----- Break -----

10:40 - 12:20

Room 302

FED2/PH4: Phosphors for FEDs
Chair:
Co-Chair:
FED2/
PH4 - 1:
10:40

M. Takai, Osaka Univ., JapanS. Okamoto, NHK, Japan
Invited Development of FEDs with New Blue
Phosphor
Y. Yasuoka, M. Kitada, Y. Obara, T. Mori, Y. Naito,
K. TamuraFutaba, Japan

This paper reports AlN:Eu suitable for forming highly fine dots of the
FED discussed together with characteristics of the FED panel using it.
With the Y2SiO5:Ce used in the FED, there are some issues. To solve
those issues, the use of the AlN:Eu was discussed for the FED.
FED2/
PH4 - 2:
11:10

Invited Luminescence and Structure of Europium
Doped Aluminum Nitride Phosphor
T. Takeda, N. Hirosaki, R.-J. Xie, K. Kimoto, M. Saito*
NIMS, Japan*Tohoku Univ., Japan

Eu doped AlN shows a blue luminescence by UV and electron
excitation. However, there is no space for large europium cation
occupation in wurtzite AlN structure. TEM measurement showed Eu
formed the layer structure in wurtzite AlN structure. The Eu coordination
environment corresponded to the luminescence property.

121

Friday
FED2/
PH4 - 3
11:40

December 5
Preparation of Sulfide Phosphors Using Liquid
Phase Process
H. Kominami, Y. Nakanishi, K. Hara
Shizuoka Univ., JapanThe synthesis process of sulfide phosphors using liquid phase reaction
was investigated to aim at fine particle. The powders fired above 700°C
were determined at SrGa2S4 single phase by X-ray diffraction
measurement, and the obtained phosphor showed green emission of
SrGa2S4:Eu excited by 325 nm of He-Cd laser and EB excitation.
FED2/
PH4 - 4
12:00

Undoped ZnO Phosphor with High Luminescence
Efficiency Grown by Thermal Oxidation
Z. Y. Xiao, M. Okada, M. Ichimiya*, T. Itoh*, G. Han,
Y. Neo, T. Aoki, H. Mimura
Shizuoka Univ., Japan*
Osaka Univ., Japan

A novel phosphor with microcavity resonator was proposed. Various
ZnO morphologies with hexagonal cross section were fabricated by athermal oxidation method. Whispering gallery resonance modes
produced in ZnO hexagonal micarocavity were assumed to provide a
qualitative explanation for the observation of enhancement green
emission.
----- Lunch -----

122

Friday

December 5

13:20 - 15:00

Room 302

FED3: CNT Emitters for FEDs
Chair:
Co-Chair:M. Sasaki, Univ. of Tsukuba, Japan
Y. Gotoh, Kyoto Univ., Japan

FED3 - 1
13:20

Field Emission Lifetime after Aging of CNT Cathodes
H. Oki, A. Kinoshita, T. Takikawa, W. S. Kim,
K. Murakami, S. Abo, F. Wakaya, M. Takai
Osaka Univ., Japan

Field emission lifetime after pulse aging of laser-treated and tapepeeled CNT (carbon nanotube) cathodes with an initial current densityof 1 mA/cm2 as a function of time was investigated. The field emission
lifetime of a laser-treated cathode followed by pulse aging was much
longer than that of a tape-peeled cathode.
FED3 - 2
13:40

Fabrication of Directly Grown Vertically Aligned CNT
Pattern Emitter on Glass
H. Furuta, T. Kawaharamura, K. Kawabata, M. Furuta,
A. Hatta, K. Ishii*, K. Okada*, T. Komukai*, T. Morioka*,
T. Matsuda, C. Li, T. Hirao
Kochi Univ. of Tech., Japan*Techno Network Shikoku, Japan

Short length, high density and vertically aligned CNTs were grown
directly on the patterned electrode on the glass substrate below 550 °C
by the water-assisted CVD. The emission current of the patterned CNTemitter was stable over 24 hours at the pulse current density of 70µA/
cm2 (duty ratio of 7.5%).
FED3 - 3
14:00

Evaluations of Field Electron Emission from a
Carbon Nanotube
H. Nakahara, Y. Kusano, T. Kono, Y. Saito
Nagoya Univ., Japan

I-V characteristics and brightness of multi-walled carbon nanotube
electron emitters are measured and compared with those of acommercially available single crystalline tungsten emitter. Even a thick
MWNT of ~15 nm diameter shows much higher performances (e.g.
higher brightness, smaller emission area etc.) than a single crystalline
tungsten one.

123

Friday
FED3 - 4
14:20

December 5
Field Emission Microscopy of Methane Molecules
Adsorbed on Multiwalled Carbon Nanotube Field
Emitters
T. Yamashita, K. Asaka, H. Nakahara, S. Uemura*,
Y. Saito
Nagoya Univ., JapanNORITAKE, Japan*

Adsorption of methane molecules on multiwalled carbon nanotubes(MWNTs) was studied by field emission microscopy. The emission wasenhanced when the emitter was exposed to methane during fieldemission. The current enhancement effect was observed when theinitial state of MWNT tip showed a pentagon pattern.
FED3 - 5
14:40

Implementation of Highly Reliable CNT Emitter for
Various Field Emission Applications
D.-J. Kim, K.-B. Kim, J.-W. Jeong*, Y.-H. Song*
Kumho Elec., Korea*ETRI, Korea

Highly reliable carbon nanotube (CNT) emitter that is applicable thevarious field emission applications were implemented by maximizing
the number of activated CNT emitter which contributes to the fieldemission without depreciating the properties of raw material.
----- Break -----

15:10 - 16:50

Room 302

FED4: FE Materials and Characteristics
Chair:
Co-Chair:H. Mimura, Shizuoka Univ., Japan
M. Namba, NHK, Japan

FED4 - 1
15:10

Emission Properties of the Ti-DLC Films Prepared by
Unbalanced Magnetron Sputtering
H. F. Liang, C. L. Liu, L. G. Meng
Xi’an Jiaotong Univ., China

The field emission properties of the Ti-DLC films were researched. The
results showed that the 1.14A/cm2 emission current density could be
detected with 33V/µm and the threshold field could be 24V//µm with
0.411 A/cm2 emission current density with coplanar emission structure.
The silicon substrate limited the emission current because of highresistivity. Key words: Ti-DLC films; Field emission; work function.

124

Friday

December 5

FED4 - 2
15:30

Field Emission Property of TiO2 Cathodes after Field
Enhanced Surface Treatment
C. Fukuyama, K. Murakami, S. Abo, F. Wakaya, M. Takai,
T. Takimoto*, Y. Kumashiro*, Y. Takaoka*
Osaka Univ., Japan*Ishihara Sangyo, Japan

Cathodes fabricated by a printing method require post treatments suchas ion or laser irradiation for protruding the materials out of the surface
for better characteristics of field emission. Field enhanced surface
treatment was found to be a effective surface treatment for needleshaped-titanium dioxide cathodes fabricated by a printing method.
FED4 - 3
15:50

Work Function Measurements of Pr-Oxide/W(100)Surface by Using of the Retarding Potential
J. Yoshihara, T. Kawakubo, H. Nakane
Muroran Inst. of Tech., JapanThe work function of W(100) surface modified with praseodymium oxide
is 2.7 eV measured by using of retarding potential methods. No peakshift in X-ray Photoelectron Spectroscopy (XPS) spectrum is observed
during the heat treatments and no specified Low Energy Electron
Diffraction (LEED) pattern are observed.
FED4 - 4
16:10

Nanometer Scale Distributions of Field Emission
Current from Carbon Materials Without NanoProtrusions
S. Nagashima, S. Ogata, M. Sasaki
Univ. of Tsukuba, Japan

Nanometer scale distributions of field emission current and local
tunneling barrier height have been measured on arc dischargeprepared carbon thin films as well as highly oriented pyrolytic graphite(HOPG) with defects. The obtained distributions indicate that
remarkable improvement of field emission characteristics of Si-FEA
upon coating with the carbon thin film is attributed to efficient fieldemission from the defects on the carbon thin film.
FED4 - 5
16:30

Improvement of in-situ Analyzer of Field Emission
Properties
Y. Gotoh, M. Kawasaki, H. Tsuji, J. Ishikawa
Kyoto Univ., Japan

We have been developing an in situ analyzer of field emission
properties, which can simultaneously observe the image of fieldemission microscope and the FN plot and the SK plot. The present
report describes the latest information of the analyzer.
----- Break -----

125

Friday

December 5

Author Interviews
17:40 – 18:40

Sponsor:
JSPS 158th Committee on Vacuum Nanoelectronics
Supporting Organizations:Technical Group on Information Display, ITE
Technical Committee on Electronic Information Displays, Electronics
Society, IEICEIDW Outstanding
Poster Paper Award
This award will go to the most outstanding paper
selected from those presented at IDW ’08 poster
presentation.
The 2008 award winners will be announced on the
IDW website:
http://www.idw.ne.jp/award.html

IDW Tutorial in Japanese
Tuesday, December 2, 2008
12:45–17:00
Room 301
Toki Messe Niigata Convention Center
Detailed information will be available:
http://www.sidchapters.org/japan/index.htm
Contact Address:idw.tutorial.wz@hitachi.com
126

Wednesday

December 3

Workshop on Organic LED Displays
Wednesday, December 3
13:20 - 14:40

Snow Hall B

OLED1: OLED Materials
Chair:
Co-Chair:S. Son, LG Chem., Korea
A. Mikami, Kanazawa Inst. of Tech., Japan

OLED1 - 1: Invited New Singlet Blue and Green Emitter for OLED
13:20
Applications
E. Böhm
Merck KGaA, Germany
We developed three new fluorescent dopants for OLED applications.
The two blue dopants show color coordinates of CIE (0.13/0.26) and(0.14/0.10) with high current efficiencies of 14.7 cd/A and 5.3 cd/A,
respectively. The green dopant shows 24.3 cd/A with excellent lifetimeof >350.000 h at 1000 cd/m2.
OLED1 - 2
13:45

Novel Host Material Based on Benzodifuran withAmbipolar Charge Transport Properties
Y. Sato*, C. Mitsui**, H. Tsuji**, E. Nakamura*,***JST, Japan**Univ. of Tokyo, Japan

Novel ambipolar biscarbazole derivative based on benzodifuran showed
well-balanced hole and electron mobility. It has demonstrated
compatibility of full-color emission as a host material. When it was used
for phosphorescent device, it exhibited much improved operation
characteristics such as longer lifetime and reduced voltage rise.
OLED1 - 3
14:00

Systematic Development of Soluble OLED Materials
at Merck
A. Hayer, N. Schulte, A. Ludemann, S. Heun, S. Leu,
H. Buchholz
Merck KGaA, Germany

Systematic development of soluble OLED materials at Merck towards
higher efficiency, pure colour and longer lifetime is shown. This isapproached via material-intrinsic parameters (new monomers,
molecular weight...), as well as stack optimization, where particularfocus is the development of hybrid OLEDs with n-doped transport layers
for increased power efficiency.

127

Wednesday

December 3

OLED1 - 4L: Invited 102 lm/W White Phosphorescent OLED
14:15
J. J. Brown, B. W. D’Andrade, J. Esler, C. Lin,V. Adamovich, S. Xia, M. S. Weaver, R. Kwong
Universal Display, USA
High efficacy white OLEDs with low voltage, high quantum efficiency
and outcoupling fixtures achieve total power efficacies of 89 lm/W to
102 lm/W, operating voltages between 2.8 V and 3.5 V at correlatedcolor temperatures of 2,800 - 3,900 K and operational lifetimes
exceeding 5,000 hours at 1,000 nits.
----- Break -----

14:50 - 16:00

Snow Hall B

OLED2: OLED Device Technologies (1)Chair:
Co-Chair:E. Böhm, Merck KGaA, Germany
Y. Kijima, Sony, Japan

OLED2 - 1: Invited Scalable AMOLED Technologies for TV
14:50
Application
T. Tsujimura, S. Mizukoshi, N. Mori, K. Miwa,
Y. Maekawa, M. Kohno, K. Onomura, K. Mameno,
S. Vanslyke*
Kodak Japan, Japan*Eastman Kodak, USA
Scalability of OLED technologies in terms of display size and mothersubstrate size is very important for success. GMC has many benefits
due to large aperture ratio and simple circuit. To secure the yield andquick ramp up, the White OLED technology with RGBW pixel anddriving algorithm have superiority.
OLED2 - 2
15:15

Development of High Performance Organic
Evaporation Source and Manufacturing System forLarge-Sized AMOLED Devices
H.-W. Kim, Y.-T. Won, S.-Y. Han, J. Patrin*,
R. Bresnahan*, C. Conroy*
Doosan Mecatec, Korea*
Veeco Instrs., USA

We developed a system for manufacturing large-sized AMOLED
devices which can scan sources or a substrate to produce WOLED or
full-colored OLED alternatively. We also have developed a valved
organic evaporation source for 4th generation substrate (730*920mm2)
which enables shutoff during idling time and open process time only. As
a result, we could obtain 38% of material utilization and 2.5% of nonuniformity.

128

Wednesday
OLED2 - 3
15:30

December 3
Degradation Analysis of the Blue Phosphorescent
Organic Light Emitting Diode by ImpedanceSpectroscopy and Transient Electroluminescence
Spectroscopy
T. Ogiwara, J. Takahashi, H. Kuma, Y. Kawamura,T. Iwakuma, C. Hosokawa
IDEMITSU Kosan, Japan

We carried out both impedance spectroscopy and transient
electroluminescence spectroscopy of a blue phosphorescent organic
light emitting diode to analyze the degradation mechanisms. It wasproved that the resistance of emission layer increased and the emission
intensity decreased by degradation of the emission site.
OLED2 - 4
15:45

The Quality of Electrically Doped Structures Studied
by Capacitance Spectroscopy
A. Werner, C. Rothe, L. Limmert, O. Fadhel, S. Murano,
A. LuxNovaled AG, Germany

Capacitance spectroscopy allows studying the electrical properties ofelectronics devices in detail. We apply this method to investigate theproperties of junctions formed by electrically doped layers. We showthat molecular dopants support well defined interfaces of undoped anddoped layers. The stability of the junctions under stress is investigated.
----- Break -----

16:35 - 17:45

Snow Hall B

OLED3: OLED Device Technologies (2)Chair:
Co-Chair:T. Tsujimura, Kodak Japan, Japan
A. Werner, Novaled, Germany

OLED3 - 1: Invited New Materials and New Device Structures for
16:35
High Performance OLEDs
J. K. Noh, M. S. Kang, J. S. Kim, J. H. Lee, Y. H. Ham,
J. B. Kim, M. K. Joo, S. Son
LG Chem., Korea
We report a new device structure of an OLED having a cathode layer
formed on top of a substrate followed by deposition of organic andanode layers subsequently. The inverted structure provides higher
quantum efficiency, lower driving voltage, better color coordination andlonger device lifetime than those of conventional structures.

129

Wednesday
OLED3 - 2
17:00

December 3
Multi-Unit White OLED with High CRI and High
Efficiency for Lighting Application
H. Tsuji, N. Ito, N. Ide, T. Komoda
Panasonic Elec. Works, Japan

Multi-unit OLED with only two emissive units having both high color
rendering index (CRI) and high efficiency is developed by the
combination of a fluorescent blue emissive unit and a phosphorescentgreen and red emissive unit. The power efficiency at 1,000 cd/m2 is 28
lm/W with CRI of 88.
OLED3 - 3
17:15

OLED Microdisplay with Embedded Eye-Tracking
CameraU. Vogel, R. Herold, D. Kreye, B. Richter, G. Bunk,
S. Reckziegel, M. Scholles, C. Grillberger, M. Törker,
J. Amelung
Fraunhofer Inst. for Photonic MicroSyss., Germany

This paper describes the integration of highly-efficient, low-voltage
organic light emitting diodes (OLEDs) in a display matrix withembedded CMOS photodiodes on a single substrate. This combinesdisplay and camera functionality (OLEDCam) in a bi-directional OLEDmicrodisplay, mainly targeted to provide eye-tracking capability.
OLED3 - 4
17:30

Simulation Study for Seamless Imaging of OLED
Tiled Display
H. S. Shim, I. S. Kee, Y. G. Lee, Y. W. Jin, S. Y. Lee
Samsung Elect., Korea

A new OLED tiling technology for seamless imaging is described. The
visible seam line of display is eliminated by modification of pixel
structure and optical treatment. This seamless viewing is realized for
not only normal direction view but oblique view. All of those effects are
confirmed by several computer simulations.

Author Interviews
18:00 – 19:00

Eurodisplay 2009 (IDRC 2009)
September 14–17, 2009
Rome, Italy
130

Thursday

December 4
Thursday, December 4

10:40 - 12:05

Snow Hall B

AMD3/OLED4: AM-OLED
Chair:
Co-Chair:S. Horita, JAIST, Japan
K. Takatori, NEC LCD Techs., Japan

AMD3/
Invited Amorphous Oxide TFT Backplanes for Large
OLED4 - 1: Size AMOLED Displays
10:40
Y. G. Mo, J. K. Jeong, H. D. Kim
Samsung Mobile Display, Korea
Amorphous oxide TFT array was fabricated and a bottom-emitting 12.1
inch WXGA AMOLED display was successfully driven by it. The TFT
array exhibited the field-effect mobility of 18 cm2/Vs, threshold voltageof 1.8 V, on/off ratio of 109, and subthreshold gate swing of 0.28 V/dec.
AMD3/
Invited Issues of a-Si:H TFTs & LTPS TFTs for an
OLED4 - 2: AMOLED Backplane
11:05
M.-K. Han, S.-G. Park, H.-S. ShinSeoul Nat. Univ., Korea
Various thin film transistors (TFT) such as hydrogenated amorphoussilicon TFT (a-Si:H TFT), low temperature poly silicon TFT (LTPS TFT)
and solid phase crystallized silicon TFT (SPC-TFT) have gained
considerable attentions as a pixel element of AMOLED display. We
have discussed many issues on each TFT for AMOLED display.
AMD3/
OLED4 - 3
11:30

High Flexibility of AMOLED Displays on Colorless PI
Substrate
Y. S. Huang, C.-J. Liu, C.-W. Lin, K.-Y. Ho, C.-H. Cheng,
S. Y. Peng, P. H. Wang, Y.-P. Chen, M.-H. Lee*, H.-C. Lin,
B.-C. Kung, C.-J. Tsai, Y.-T. Chen, P.-F. Lee, G.-R. Hu,
J.-J. Huang, C.-C. Lee
ITRI, Taiwan*Nat. Taiwan Normal Univ., Taiwan

We have demonstrated the 4.1-inch QVGA flexible AMOLED withbottom emission type, and the display was fabricated on 30um-thickcolorless PI substrate. The a-Si:H TFT exhibited the field effect mobilityof 0.43cm2/V-s, the Vth of 2.8V, the S.S. of 0.6V/decade, and the Ion/Ioff
ratio is larger than 106.

131

Thursday
AMD3/
OLED4 - 4L
11:50

December 4
Development of Stable, High-Performing Organic
Semiconductors and TFTs
G. Lloyd, P. Miskiewicz, M. Carrasco-Orozco, S. Tierney,
J. Canisius, M. Heckmeier, D. Mueller, J. Nakanowatari*
Merck Chems., UK*Merck, Japan

Stable materials with high carrier mobility values up to 4cm2/Vs havebeen developed and formulated to maximize performance, enhancestability and simplify processing conditions. We demonstrate highly
stable organic thin film transistors and highlight the importance of thedielectric in enhancing the performance as well as the stability.
----- Lunch ----13:20 - 16:20

Exhibition Hall B

Poster OLEDp: OLED Poster
OLEDp - 1

Dopant Ratio Effect on Power Efficiency of Blue
Phosphorescent Organic Light-Emitting Devices
Using Carbazole-Based Hosts
T.-S. Shieh, J.-S. Lin, P.-C. Liu, M.-T. Chu, M.-R. Tseng
ITRI, Taiwan

The blue phosphorescent OLEDs with carbazole-based hosts andFirpic as a dopant would be compared here. The OLEDs with 4CzPBP
as host and Firpic’s dopant ratio as lower than 10% could be consideredthat the triple emitter reverse energy transfer from Firpic guest back to
the 4CzPBP host.
OLEDp - 2

Enhanced Carrier Recombination in White
Phosphorescent OLEDs Using a Blue Composite
Emitter
M. T. Lee, J. S. Lin, M. T. Chu, M. R. Tseng
ITRI, Taiwan

Based on yellow and composite blue emitters, the white PHOLEDs witha power efficiency of 32 lm/W at brightness of 1000 cd/m2 can beachieved. The device efficiency can be enhanced by a factor of 1.4
comparing to that of using typical blue emitter composed of host anddopant only.
OLEDp - 3

High Energy Gap Host Materials for Blue
Phosphorescent Emitters
C. J. Lin, H. L. Huang*, C. H. Cheng, M. R. Tseng*Nat. Tsing Hua Univ., Taiwan*
ITRI, Taiwan

The blue phosphorescent OLED with high efficiency, high thermal
stability and high brightness will be illustrated in this paper. Applying
new high energy gap host materials can easily trap the recombinationenergy of holes and electrons within emitting layer and effectivelytransfer to blue phosphorescent emitters to emit blue light.
132

Thursday
OLEDp - 4

December 4
Fabrication of Thin Film by Plasma Polymerization
and Application to Organic Light Emitting Device
R. Koyama, K. Fukuyori, S. Tanaka, S. Yoshikado
Doshisha Univ., Japan

Thin films appricable to OLED were deposited using plasmapolymerization by discharge at low frequency. The extrapolated
operating-voltage of toluene film for the zero film thickness was smaller
than benzene-thin-film. Adhesion of the film to substrate was improvedby pre-discharge in air.
OLEDp - 5

High Efficient Red Phosphorescent OLEDs Using theIntermixed Double Host System of TCTA/
TCTA0.5TPBI0.5/TPBI
J. G. Jang, H. K. Shin, W. K. Kim
Dankook Univ., Korea

Based on the intermixed double host system of (TCTA/TCTA0.5TPBI0.5/
TPBI) doped with SFC-R411, red phosphorescent organic light emitting
diodes with doping density of 5% and 10% were fabricated. The deviceof (TCTA/TCTA0.5TPBI0.5/TPBI):5% SFC-R411 showed the maximum
current efficiency of 15.8cd/A under a luminance of 30cd/m2 with peakwavelength of 625nm.
OLEDp - 6

SAXS Study of Polyfluorene in the Solution for PLED
B. W. Shin, J. H. Kim*, S. Y. Lee, H. R. Lee
Kyungpook Nat. Univ., Korea*
Pohang Accelerator Lab., Korea

This study presents the structure of poly[9,9-di-(2-ethylhexyl)-fluorenyl2,7-diyl] (PF) in toluene by using small angle x-ray scattering (SAXS).
That was the shape of disk in a dilute solution with only correlation
between polymer and solvent. The correlation between PFs was under
the influence of the concentration and temperature of solution.
OLEDp - 7

Impedance Spectroscopy of Multilayer Organic
Light-Emitting DiodeY. Terao, K. Kawaguchi, M. Nishiura, H. Kimura*, T. Saito,
M. Ichikawa**, T. Okachi**, H. Naito***Fuji Elec. Advanced Tech., Japan*
Fuji Electric Holdings, Japan**Shinshu Univ., Japan***Osaka Pref. Univ., Japan

Impedance spectroscopy measurements were carried out on themultilayer OLEDs. Low-efficient OLEDs show large magnitude ofnegative capacitance (NC). NC may well be connected to loss
mechanisms of luminous efficiency and the performance degradation.
This is the first time that NC phenomenon is related to multilayer OLEDs
performance.
133Thursday

December 4

OLEDp - 8

Development of Inverted Organic Light-Emitting
Diode Device Applied Multilayer Transparent AnodeJ. Y. Lee, H. W. Choi, H. S. Yang, J. H. Park,N. H. Myoung, J. H. Lee, H. D. Bae, Y. H. Tak
LG Display, Korea

Multilayer IZO-Ag-IZO stacks were evaluated as transparent anode forinverted organic light-emitting diode. The multilayer anode exhibited aremarkably reduced sheet resistance of 3.3Ω/sq and a hightransmittance of 89%. The IOLED with the multilayer anode shows goodelectrical characteristic compared to IOLED with single IZO anodelayer.
OLEDp - 9

Effect of Hole Transport Layer Doping on the Organic
Light Emitting Diode Performance
G. Chauhan, R. Srivastava, P. C. Srivastava*,
M. N. KamalasananNat. Physical Lab., India*Banaras Hindu Univ., India

Effects of doping on the hole conductivity of (α-NPD has been analyzed
by fabricating the hole-only device and organic light-emitting devices
using pure and doped (α-NPD. Doping increases the current densities
by 2 orders of magnitude. OLED with 0.4 wt % F4-TCNQ doped (α-NPD
shows the maximum luminescence and efficiency.
OLEDp - 10

A Novel Active-Matrix Driving Scheme with Buffer
Circuitry for WOLED Lighting Application
H. Yang, S.-C. Chen
Nat. Taipei Univ. of Tech., Taiwan

A novel active-matrix driving scheme with buffer circuitry applied towhite organic light-emitting device (WOLED) for lighting application is
proposed and investigated by SPICE simulation. Our simulation result
revealed that near 14% extra driving current can be provided to WOLED
without increasing current stress of driving transistor as degradation
occurred.
OLEDp - 11

Large Area White Organic Light-Emitting Devices
with Two Emission Bands
J.-A. Cheng, C. H. Chen, H.-P. D. Shieh,T. Negishi*,Y. X. Yang*, T. Miyata*, W.-S. Huang*, H. Hiraiwa*
Nat. Chiao Tung Univ., Taiwan*ULVAC, Japan

A large area white OLED device with a dimension of 100x100 mm2
substrate was fabricated. In the optimized device glass/ITO/NPB/
NPB:R-rubrene/MADN:TBDP/Alq3/LiF/Al, the turn-on voltage andcurrent efficiency were 2.9 V and 9.3 cd/A @ 5.9 mA/cm2, respectively.
The corresponding 1931CIEx,y coordinate was (0.29, 0.41) and almost
independent of varying voltages.
134Thursday

December 4

OLEDp - 12

Withdrawn

OLEDp - 13

White OLEDs with Blue and Yellow Emitting Layers:
Effects of Doping and Interface Engineering
H. Y. Park, Y. G. Lee, S. I. Lee, K. H. Koh
Ajou Univ., Korea

We fabricated WOLEDs based on a complementary color scheme
using yellow and blue EMLs. The host and guest for a blue EML were
MADN and SA-biph. For a yellow EML, both NPB and Alq3 were tested
as a host while TBRB was used as a yellow-emitting guest.
OLEDp - 14

Low Driving Voltage and High Efficiency for Green
Phosphorescent Organic Light Emitting Devices
H. L. Huang, M. R. Tseng
ITRI, Taiwan

The green phosphorescent OLED with low turn on voltage, highefficiency, high thermal stability and high brightness will be illustrated inthis paper. Applying hole injection material and compatible hole
blocking material can confine the hole and electron within emitting layer
effectively to emit green light.
OLEDp - 15

Power Efficient OLED with a Novel P-Doped Layer
K. H. Lin, M. H. Ho, M. T. Hsieh, C. S. Cheng, S. Y. Su,
C. Y. Wu, C. H. Chen
Nat. Chiao Tung Univ., Taiwan

An efficient p-doped transport layer composed of 2-methyl-9, 10-di(2naphthyl)anthracene (MADN) and tungsten oxide (WO3) has beendeveloped. The incorporation of 10% WO3 into MADN is found to
improve the hole injection and conductivity. This work can simplify the
fabrication of future p-i-n OLED with a single common ambipolar MADN
material.
OLEDp - 16

High Performance Color Conversion Polymers andTheir Application to OLED Devices
M. Nagai, L. Chong, N. Kanai, T. Asakawa, H. Hashida,
K. Kawaguchi, Y. Kawamura, H. Kimura
Fuji Elec. Advanced Tech., Japan

Highly efficient color conversion polymers were discovered. The films
showed excellent PL quantum efficiency (70-80%). The maximum PL
and absorbance peaks were around 510 and 480 nm for the green
polymer and around 640 and 460 nm for the red one, respectively. They
are suited for color-conversion type OLEDs.

135

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December 4

OLEDp - 17

Efficiency Improvement and Long Lifetime ofTransparent Organic Light-Emitting Diodes Using 8Hydroxy-Quinolinato Lithium as Passivation Layer by
Thermal Annealing
K. P. Na*,**, C. P. Lee**, B. K. Ju*, J. I. Han***

Korea Univ., Korea**KETI, Korea

We have developed a transparent passivation layer using 8-hydroxyquinolinato lithium (LiQ) in transparent organic light-emitting devices(TOLEDs). The LiQ passivation layer improves the stability of Ca/Ag
double layer which have used as a semitransparent cathode, resulting
in substantial increase of the efficiency and lifetime by the enhanced
luminance.
OLEDp - 18

Simultaneous Determination of Localized-State
Distributions and Charge-Carrier Mobility in Organic
Light-Emitting Diodes by Impedance Spectroscopy
T. Okachi, T. Nagase, T. Kobayashi, H. Naito
Osaka Pref. Univ., Japan

A method for determining localized-state distributions in organic lightemitting diodes (OLEDs) by impedance spectroscopy is proposed andthe applicability of the method is examined by computer simulation andexperiment. The method is particularly useful for OLEDs because
localized-state distributions and drift mobility can be determined
simultaneously.
OLEDp - 19

Enhancement of Out-Coupling Efficiency in Organic
Light Emitting Devices Stacked with High Refractive
Index of Porous Light Scattering Layers
T. Koyanagi, A. Mikami
Kanazawa Inst. of Tech., JapanThe total emission flux of an organic light emitting device has beensuccessfully enhanced by employing high refractive index glass
substrate coated with a light extraction layer. In addition, we tried todevelop a porous titanium oxide layers prepared by wet-process as alight scattering layer.
OLEDp - 20

A Simple Structure P-I-N Phosphorescent OLEDS. Y. Kim, T. J. Park, W. S. Jeon, R. Pode, J. Jang,J. H. Kwon
Kyung Hee Univ., Korea

We present simple P-I-N phosphorescent green OLEDs having an idealenergy level structure. A low driving voltage value of 3.3V and maximum
current- and power-efficiency values of 50.1 cd/A and 60.5 lm/W are
obtained in this simple P-I-N device.

136

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December 4

OLEDp - 21

Optical Analysis on the Influence of Anode Structure
upon Luminance in Thin Film Stacked Organic Light
Emitting Devices
M. Yamana, M. Nakamura, N. Ito, Y. Mitsutake,T. Yamaki, A. Mikami*
Panasonic Elec. Works, Japan*
Kanazawa Inst. of Tech., Japan

We have investigated luminance in red emitting OLEDs with different
anode structure, and compared it with theoretical calculation based on
Fresnel’s analysis and transfer matrix. There are good agreements
between the experimental and theoretical results, and we clarify theaffect of anode structure to luminance characteristics by using theanalysis.
OLEDp - 22

Horizontal Dipping Method for Simple Fabricating
OLEDs
B. Park, M.-Y. Han, M. Kim, C. H. Park, Y. I. Lee
Kwangwoon Univ., Korea

Horizontal dipping (H-dipping) was studied for fabricating OLEDs.
Uniform films were fabricated by concave meniscus of used solutions.
H-dipped OLEDs were fabricated with high performance; maximum
efficiency of 14 cd/A with 14500 cd/m2. Patterned OLEDs on 2"
substrates were successfully fabricated, implying that H-dipping holds
great potential for large-area OLEDs.
OLEDp - 23

Laser Beam Delivering and Shaping Device forTransfer of Organic Film
G. I. Yi, J. H. Kwon, J. H. Yi
Yeungnam Univ., Korea

A single mode fiber laser beam was delivered inside a glove box via afiber. The laser beam from the fiber end was collimated and sent to alens set, which condensed Gaussian beam to a square-hat beam on theorganic film coated film.
OLEDp - 24

Ink-Jet Printed Small MolecularElectrophosphorescent OLEDs
B. Park, M. Kim, M.-Y. Han, C. H. Park, Y. I. Lee
Kwangwoon Univ., Korea

We studied the efficient light emission from small molecularelectrophosphorescent OLEDs. The organic layer was made by ink-jet
printing with a composite solution, prepared by dissolving small
molecular compounds into mixed solvents. Efficient green emissions
were generated; the peak luminance was 50000 cd/m2 and the peakefficiency was 45 cd/A.

137

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OLEDp - 25

December 4
Image Reversal Photoresist for OLEDs
S. Yi, Y. S. Shin, D. Ihm, K.-H. Choi*
Hoseo Univ., Korea*
Dongjin Semichem, Korea

We have developed an image reversal photoresist with high thermal
stability and electric insulating properties for OLED applications. The
thermal stability and electric insulating properties were investigated.
This image reversal photoresist enables the single isolation structure
applicable to OLEDs so as to reduce the fabrication process.
OLEDp - 26

Plasma-Polymerized Insulator for Flexible PassiveMatrix Organic Light-Emitting Diode Displays
K. Akedo, A. Miura, K. Noda, H. Fujikawa
TOYOTA Central R&D Labs., Japan

We have investigated plasma-polymerized insulators for flexible
passive-matrix OLED displays. They could suppress expansion of darkarea compared to conventional photoresist insulators because they had
little adsorption of moisture. They also showed long lifetimes in a driving
test because they were easily patterned with little damage to ITO
anodes.
OLEDp - 27

Out-Coupling Efficiency Enhanced Organic LightEmitting Diodes on the Flexible Substrate
W. Lee, Y.-W. Lim, S.-D. Lee
Seoul Nat. Univ., Korea

Imprinted polymeric nano-structures between a flexible substrate and atransparent anode in an organic light-emitting diode have improved theout-coupling efficiency. The proposed device shows enhanced
luminance by 50% compared to a normal device. Moreover, thepolymer-based imprinting technique allows for roll-to-roll processes
required for flexible and large area displays.
OLEDp - 28

Gas Propertied of Inorganic Mg-Zn-F Heterointerface
B. H. Kang, S. H. Kim, D. E. Kim, S. M. Hong, S. Y. Lee,B. W. Shin, D. H. Kwon*, H. R. Lee, S. W. Kang
Kyungpook Nat. Univ., Korea
Kyungil Univ., Korea*

We have manufactured Mg-Zn-F thin film of amorphous structure
contains MgF2, which has better optical transmittance thanconventional oxide thin films and Zn, which has high electronegativity.
Thin film of semi-triatomic material have higher packing density thanconventional MgF2 film was manufactured and characteristics of thispassivation film were evaluated.

138Thursday
OLEDp - 29L

December 4
Polarized White Emission from Polymer LEDs of
Aligned Binary Blend
Y. Hijikata*,**, M. Misaki*, S. Nagamatsu***,M. Chikamatsu*, Y. Yoshida*, R. Azumi*, N. Tanigaki*,
M. Yamashita**, K. Yase**

AIST, Japan**Tokyo Univ. of Sci., Japan***Kyushu Inst. of Tech., JapanWe demonstrate polymer light-emitting diodes with polarized whiteemission for liquid crystal display backlights application. Polarized whiteemission was realized by spin-coating a mixed solution of blue andorange emissive polymers onto an alignment layer. The polarization
ratio was estimated to be 2.4 with the CIE coordinates of (0.33, 0.34).
OLEDp - 30L

A Peel-Off Method For Flexible Organic Light
Emitting Diodes By Controlling Works Of Adhesion
S. Y. Kim, K. Kim, H. K. Yu, K. Hong, J.-L. Lee
Pohang Univ. of Sci. & Tech., Korea

Flexible Organic light emitting diodes (OLEDs) were fabricated on a
glass/MgOx/Ag layered substrate and separated between Ag and MgOx
interface by controlling works of adhesion. Adhesive force decreased
from 18 gf/cm to 1.4 gf/cm after insertion of the MgOx layer between the
Ag and glass.
OLEDp - 31L

A Highly Efficient Red Organic
Electrophosphorescent Device with SolutionProcessed Emissive Layer
J.-H. Jou, C.-H. Chiu, W.-B. Wang, M.-F. Hsu, Y.-M. Lai,
C.-S. Tuan*
Nat. Tsing Hua Univ., Taiwan*
ITRI, Taiwan

We successfully fabricated a highly efficient red organic
electrophosphorescent device by using solution-processable 4,4'Bis(carbazol-9-yl)bicycle-octancebiphenyl as host. A high powerefficiency of 18.6 lm/W at 100 cd/m2 with Commission Internationale del’Eclairage coordinates of (0.55, 0.45) was obtained by doping in thedevice with 3 wt% red emitter, tris(2-phenylquinoline)iridium(III).

139

Thursday
OLEDp - 32L

December 4
A Novel Polymer Host for High-Efficiency Blue
Organic Light-Emitting DiodeJ.-H. Jou, Y.-M. Lai, W.-B. Wang, C.-H. Chiu,
S. Grigalevicius*, C.-C. Chen, B.-S. Wu, T.-R. Huang
Nat. Tsing Hua Univ., Taiwan*Kaunas Univ. of Tech., Lithuania

A highly efficient blue polymer light-emitting diode (PLED) was
fabricated by using a novel polymer host, poly[3-(carbazol-9- ylmethyl)3-methyloxetane]. The resultant device showed a record-high efficiencyof 20.3 lm/W at 100 cd/m2 by doping 24 wt% blue dye bis(3,5-difluoro-2(2-pyridyl)-phenyl-(2-carboxypyridyl)iridium (III).
OLEDp - 33L

Superhydrophobic Nano-Patterning on a Flexible
Gas Barrier Film by Using a Poly(Dimethylsiloxane)
Mold
J. H. Choi, Y. M. Kim, Y. W. Park, T. H. Park, K. Y. Dong,
B. K. Ju
Korea Univ., Korea

Super-hydrophobic and transparent gas barrier films were fabricated via
nano-patterned poly-dimethylsiloxane elastomer imprinting on an
ultraviolet curable resin. Ca degradation method and surface energies
measurements were used to determine the level of modification of thesurface characteristics. As a result, the decreased surface energy led toa lower WVTR.
OLEDp - 34L

New Concept of Flexible OLED with Every Light
Emitting Pixel which is Crossed by Electrode Strip
S. W. Kim, S. H. Hwang, H. S. Yoo, S. Vaidyanathan,D. Y. Jeon
KAIST, Korea

We propose new concept of flexible OLED with every light emitting pixel
which is crossed by electrode strip. Even though our results are very
earlier stage to achieve fully flexible display based on textile structure,
this basic concept demonstrates the possibility of the textile flexible
display coming in the future.

IDMC/3DSA/Asia Display 2009
April 27–30, 2009
Taipei, Taiwan
140Thursday
OLEDp - 35L

December 4
Fabrication of Micro-Pixel Array via Thermal
Imprinting with a Polymer Stamp for Organic LightEmitting Diodes
T. H. Park, Y. M. Kim, Y. W. Park, J. H. Choi, K. Y. Dong,
S. I. Shin, K. C. Choi*, B. K. Ju
Korea Univ., Korea
KAIST, Korea*

We have developed a noble process to fabricate micro-pixel array oforganic light-emitting diodes (OLED) via thermal imprinting technique.
We used poly-dimethylsiloxane as a stamp that is profitable to fabricate
uniform large-sized area OLED than a hard stamp. As a result, 6 µm
pixel sized high-resolution OLED was demonstrated.
OLEDp - 36L

A Novel Host Material for High-Efficiency Blue
Organic Electrophosphorescent Device
J.-H. Jou, W.-B. Wang, C.-T. Chen*, S.-Z. Chen,
M.-F. Hsu, C.-J. Wang, M.-F. Wu*, S.-W. Liu*, S.-M. Shen,
C.-C. Chen, C.-P. Liu
Nat. Tsing Hua Univ., Taiwan*Academia Sinica, TaiwanAnovel
molecularhostmaterial,
3,5-di(9H-carbazol-9yl)tetraphenylsilane (SimCP2), will be presented. By using this host, a
blue electrophosphorescent device with a record-high power efficiencyof 24.2 lm/W and EQE of 17.7 % at 100 cd/m2 with Commission
Internationale de l’Eclairage coordinates of (0.18, 0.33) is obtained.
OLEDp - 37L

New Passive-Matrix OLED Driver with Multi-Line
Addressing Scheme
U. Vogel, P. König, G. Bunk, J. Amelung, C. Xu*,
S. Barth**, J. Wahl**
Fraunhofer Inst. for Photonic MicroSyss. (IPMS), Ctr. for
Organic Materials & Elect. Devices Dresden (COMEDD),
Germany*
Saarland Univ., Germany**
Optrex Europe GmbH, Germany

This paper describes a new 160x80 passive-matrix OLED driver ASIC
capable in applying multi-line addressing (MLA). Application is directed
towards automobile dashboard displays.

Author Interviews
18:00 – 19:00

141Thursday

December 4Workshop on 3D/Hyper-Realistic
Displays and Systems
Thursday, December 4
9:00 - 12:00

Exhibition Hall B

Poster 3Dp: Hyper Realistic and 3D Display
3Dp - 1A Novel Autostereoscopic 2D/3D Switchable Display
by Switching Barrier
M.-D. Chou, C.-C. Chang, J.-T. Lien, C.-C. Tsai, C.-P. Su,
Y.-l. Chao, C.-L. Tsou, C.-N. Mo
Chunghwa Picture Tubes, Taiwan

We have developed a novel autostereoscopic 2D/3D switchable display
by LC barrier can be on/off switching controlled according to image
data. As results, an autostereoscopic display which can be switching
between 4-view 3D mode and clear 2D mode successfully. Besides, 2D
and 3D image can be displayed synchronously.
3Dp - 2

Volumetric Display System Based on Inclined-Plane
Scanning Using Digital Micromirror Device
D. Miyazaki, K. Ohno, T. Mukai
Osaka City Univ., Japan

A volumetric display system based on inclined image plane scanningwas constructed using a digital micromirror device (DMD). It can form
three-dimensional images of 1024 × 768 × 200 voxels. Although animage formed by the DMD is binary, multi-level images were achievedby a dithering technique.
3Dp - 3

Design and Application of a Scent-Emitting Video
Display System
A. Tomono, T. Tomono, S. Otake
Tokai Univ., Japan

We propose a new method where a device that can release pressurizedgases is placed behind the display screen filled with tiny pores. Scentsare then ejected from this device, traveling through the pores to the front
side of the screen. We also present a scent release time control
method.

142

Thursday
3Dp - 4

December 4
Image Distortion and Its Correction Method
According to Observer’s Rotation Movement in
Stereoscopic Display
D.-W. Kim*,**, K.-H. Lee*, S.-K. Kim*
*KIST, Korea**

Korea Univ., Korea

The stereoscopic image distortion is made by rotation movement of theobserver, which is caused by different horizontal position of each eye ofthe observer. In this paper, we showed the simulation result about the
distortion analysis and the correction of the stereoscopic image inrotation movement of the observer.
3Dp - 5

Crosstalk of Stereoscopic Display Using Patterned
Retarder and Corresponding Glasses
Y. Yoshihara*,**, H. Ujike*,***, T. Tanabe***Japanese Ergonomics Nat. Committee, Japan**Arisawa Manufacturing, JapanWe develop and manufacture patterned retarders for 3D display. The
main subject for the presentation is crosstalk, reporting a measurement
method, suggestions for improvement, and improvement results.
3Dp - 6

Depth Perception for Moving Pictures Shown on a
Large LED Display with an Aperture Grille
H. Yamamoto*, H. Nishimura*,**, K. Uchida*,***,
K. Ono*,****, Y. Hayasaki*,*****, S. Suyama**

Univ. of Tokushima, Japan**Toshiba, Japan***Victor of Japan, Japan****

Panasonic, Japan*****Utsunomiya Univ., Japan

We have experimentally confirmed that binocular delay of moving
pictures gives depth perception. Perceived depth caused by thebinocular delay was measured experimentally by utilizing astereoscopic display with an aperture grille. Furthermore, it was foundthat use of an aperture grille improves depth impression for noninterleaved moving pictures.

143Thursday
3Dp - 7

December 4
A Method for Hologram Generation in a ThreeDimensional Imaging System Based on Multi Vision
Data Acquisition and Holographic Display
T. Kurahashi, K. Nitta, O. Matoba
Kobe Univ., Japan

A method for signal processing of hologram generation in a threedimensional image system based on multi-vision acquisition andholographic display is reported. In this method, a template data isutilized instead of simulation for wave propagations. This method isverified to be much faster than calculation with the Fresnel propagation.
3Dp - 8

A System of Wavefront Recording andReconstruction of Moving Three-Dimensional
Objects for Wide Angle
Y. Kitamura, M. Tanaka, K. Nitta, O. Matoba, Y. Awatsuji*
Kobe Univ., Japan*Kyoto Inst. of Tech., Japan

A system of wavefront recording and reconstruction of threedimensional objects with wide angle is presented. In the recording
system, spatially phase-shifting interferometer is used for recording
instantaneously the wavefront of three-dimensional objects. In thereconstruction, time-sharing reconstruction with various directions ispresented.
3Dp - 9

Expansion of the Illumination and Reconstruction
Area in the Reflection-Type Digital Holography
Microscope System
K. H. Choi*,**, S. K. Kim*, J.-Y. Son****KIST, Korea**Korea Univ., Korea***

Daegu Univ., Korea

Digital Holography Microscope system using classical Michelsoninterferometer have a defect to the restricted within recording andreconstruction of object area. In this research, we developed
MRDHMSystem. Applied this new system in Digital Holography
Microscope System, as a result we have increase recording andreconstruction of object area.

144

Thursday
3Dp - 10December 4
A Real-Time Color Electroholography Using theSpace-Division Method and a GPU Cluster
T. Shimobaba, T. Nakajima, A. Urayama, T. Sanbei,
Y. Ichihashi*, Y. Abe*, H. Nakayama*, N. Masuda*,
A. Shiraki**, N. Takada***, T. Ito*
Yamagata Univ., Japan*
Chiba Univ., Japan**Kisarazu Nat. College of Tech., Japan***Shohoku College, Japan

We report our electroholography 3D display system that can calculate
CGHs in real-time, and reconstruct color 3D objects from the CGHs. In
this system, for color reconstruction problem, we used the spacedivision method and an error diffusion method. For real-time CGH
calculation, we used a GPU (Graphic Processing Unit) cluster.
3Dp - 11Highly Parallelized Special-Purpose Computer
System for Flow Velocity Measurement by Digital
Holography
Y. Abe, N. Masuda, Y. Hamada, T. Ito, S. Satake*,
T. Kunugi**, K. Sato***Chiba Univ., Japan*Tokyo Univ. of Sci., Japan**
Kyoto Univ., Japan***Toyota Inds., JapanIn DHPTV, a great amount of time is spent on the hologram
reconstruction compared with the time that hangs to the hologram
record. In this study, we tried to make the special purpose computer for
DHPTV system in parallel and succeeded in speed-up 100 times fasterthan a personal computer.
3Dp - 12L

One-Unit System for Electroholography Using aSpecial-Purpose Computer with a High-Definition
Liquid Crystal Display
Y. Ichihashi, M. Tsuge, T. Mizukami, H. Nakayama,
T. Shimobaba*, A. Shiraki**, N. Masuda, T. Ito
Chiba Univ., Japan
Yamagata Univ., Japan**
Kisarazu Nat. College of Tech., Japan*

Electroholography is one of the techniques for achieving threedimensional (3-D) television. We connected a special-purpose
computer for holography to a display board with a high-definitionreflective liquid crystal display. We succeeded in reproducing 30 frames
per second in a 3-D image composed of about 2,000 points using thissystem.

145

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December 4

3Dp - 13L

Registration Progress Report for 3-D Object Display
D. Moldovan, S. Yano, N. Inoue
NICT, Keihanna Lab., JapanA new type of 3-D object display in which the digitized views of the real
object are divided into four quarters is presented. Registration starts byaligning consecutive views inside each quarter. By gradually registeringand displaying the range views, the registration progresses
simultaneously from four directions.
3Dp - 14L

Development of the World Largest Parallax Barrier
Type Triple View Display
H. J. Park, Y. B. Lee, J. H. Woo, K. B. Park, W. S. Kim
LG Display, Korea

We have developed a parallax barrier type TVD with the world’s largest
size (47") and the highest resolution (360 X 3 (Left/Center/Right) X
1920). We especially realized the front luminance over 600nit by using ahigh-luminance backlight. Therefore, TVD could be used not only forindoor but also outdoor applications.
3Dp - 15L

Handmade 3D Stereo Adapter Using Commercial DIY
Goods
K. Sakamoto, T. Ohara
Konan Univ., JapanWe describe the adapter using grating sold at stores for easy 3D
viewing. The screen is divided in half to generate side-by-side images
which are in the different position. This disables observers from viewing
3D images easily. To overcome, we developed viewing support unit
using DIY goods easy to get.
14:55 - 15:00

Room 301

Opening
Opening Remarks
14:55
I. Yuyama, Utsunomiya Univ., Japan
15:00 - 16:05

Room 301

3D1: Visual Perception and Human Factor
Chair:
Co-Chair:146

I. Yuyama, Utsunomiya Univ., Japan
T. Mishina, NICT, JapanThursday
3D1 - 1:
15:00

December 4
Invited Comparison Between Perceived Size of a Real
3D Object and That of Its 2D Image
H. Kaneko, A. Minami, T. Asano, H. Mizushina
Tokyo Inst. of Tech., JapanWe quantitatively measured the difference between perceived sizes of areal object and its picture. The results showed that perceived horizontal
size of 2D image was enlarged relative to that of 3D object. I discuss thecause of the difference from the viewpoint of binocular viewing.
3D1 - 2
15:20

Appearance Reproduction by High-Density
Directional Display: Influence of Ray Sampling andComparisons to High-Resolution 2D Display
M. Oguma, Y. Takaki
Tokyo Univ. of A&T, JapanThe subjective evaluation of the 72-direction VGA display was
performed to show the dependency of the appearance reproduction on
the ray sampling pitch and the observation distance. The comparisonsof the appearance reproduction between the 72-direction VGA display
and two-dimensional displays having VGA resolution and higher werealso performed.
3D1 - 3
15:35

Subjective Evaluation of the Depth Feeling in Ray
Reconstruction 3D Image
T. Morimoto, R. Odake, M. Ueda, J. Ohsako, C. H. Lee*,J. Zhang*, H. Masuda*Sony, Japan*
Sony Elect. Pte., Singapore

This paper evaluates, subjectively, how the Depth (3D) Feeling ofimages, which are reproduced by a Ray-Reconstruction 3D display, isaffected when the original images’ characteristics change. The
characteristics investigated are resolution, contrast, brightness, blur,and distortion.
3D1 - 4
15:50

A Subjective Evaluation about the Difference ofPerceived Resolution between 2D and 3D Images
M. Tsuboi, S. Kimura, T. Horikoshi, Y. Takaki*
NTT DOCOMO, Japan*Tokyo Univ. of A&T, JapanA subjective test is used to evaluate the perceived roughness of 2D and
3D images. We find that humans perceive 3D images to be smootherthan the 2D equivalents. Other effects triggered by human factors are
elucidated.
----- Break -----

147

Thursday

December 4

16:40 -17:55

Room 301

3D2: Measurement and Standardization
Chair:
Co-Chair:
3D2 - 1:
16:40

J.-Y. Son, Daego Univ., Korea
M. Hashimoto, NTT DATA, Japan
Invited Ergonomics for 3D Displays and Their
Standardization
G. Hamagishi*,*2, K. Taira*,*3, K. Izumi*,*4, S. Uehara*,*5,
T. Nomura*,*6, K. Mashitani*,*7, A. Miyazawa*,*8,
T. Koike*,*9,*10, A. Yuuki*,*11, T. Horikoshi*,*12,
Y. Yoshihara*,*13, Y. Hisatake*,*14, H. Ujike*,*15,
Y. Nakano**Japanese Ergonomics Nat. Committee, Japan*2Seiko Epson, Japan*3

Toshiba, Japan*43D Consortium, Japan*5NEC LCD Techs., Japan*6

Sharp, Japan*7Sanyo Elec., Japan*8NAMCO BANDAI Games, Japan*9

Hitachi, Japan*10Univ. of Tokyo, Japan*11Mitsubishi Elec., Japan*12

NTT DOCOMO, Japan*13Arisawa Manufacturing, Japan*14Toshiba Matsushita Display Tech., Japan*15

AIST, JapanThe standardization of guidelines for autostereoscopic displays isnecessary and it must be based on ergonomic data. ISO/TC 159/SC 4/
WG 2 has decided that Technical Report will be prepared as the firststep of standardization. Improved standardization through a new ISO
proposal will lead to the spread of autostereoscopic displays.

IDW Tutorial in Japanese
Tuesday, December 2, 2008
12:45–17:00
Room 301
Toki Messe Niigata Convention Center
Detailed information will be available:
http://www.sidchapters.org/japan/index.htm
Contact Address:idw.tutorial.wz@hitachi.com
148

Thursday
3D2 - 2:
16:55

December 4
Invited Variation of Autostereoscopic Displays andTheir Measurements
K. Taira*,*2, G. Hamagishi*,*3, K. Izumi*,*4, S. Uehara*,*5,
T. Nomura*,*6, K. Mashitani*,*7, A. Miyazawa*,*8,
T. Koike*,*9,*10, A. Yuuki*,*11, T. Horikoshi*,*12,
Y. Hisatake*,*13, H. Ujike*,*14, Y. Nakano**Japanese Ergonomics Nat. Committee, Japan
Toshiba, Japan*3Seiko Epson, Japan*4
3D Consortium, Japan*5
NEC LCD Techs., Japan*6Sharp, Japan*7
Sanyo Elec., Japan*8
NAMCO BANDAI Games, Japan*9Hitachi, Japan*10Univ. of Tokyo, Japan*11
Mitsubishi Elec., Japan*12NTT DOCOMO, Japan*13Toshiba Matsushita Display Tech., Japan*14
AIST, Japan*2

Outlines of the classification and the variation of autostereoscopic
displays, the basic concept of the qualified viewing space forstereoscopic viewing, and the required optical measurement items aredescribed. These issues have been studied by the members of theJapanese mirror committee for ISO TC 159/SC 4/WG 2.

IDW Best Paper Award
This award will go to the most outstanding paper
selected from those presented at IDW ’08.
The 2008 award winners will be announced on the
IDW website:
http://www.idw.ne.jp/award.html

IDMC/3DSA/Asia Display 2009
April 27–30, 2009
Taipei, Taiwan
149Thursday
3D2 - 3:
17:10

December 4
Invited Methodology of Optical Measurement for
Autostereoscopic Displays
S. Uehara*,*2, K. Taira*,*3, G. Hamagishi*,*4, K. Izumi*,*5,
T. Nomura*,*6, K. Mashitani*,*7, A. Miyazawa*,*8,
T. Koike*,*9,*10, A. Yuuki*,*11, T. Horikoshi*,*12,
H. Ujike*,*13*Japanese Ergonomics Nat. Committee, Japan
NEC LCD Techs., Japan*3Toshiba, Japan*4
Seiko Epson, Japan*5
3D Consortium, Japan*6Sharp, Japan*7
Sanyo Elec., Japan*8
NAMCO BANDAI Games, Japan*9Hitachi, Japan*10Univ. of Tokyo, Japan*11
Mitsubishi Elec., Japan*12NTT DOCOMO, Japan*13AIST, Japan*2

For standardization of 3D displays based on ergonomics, we propose
methodology of optical measurement for autostereoscopic displays. In
order to obtain viewing spaces as the requirements of standardization,
luminance distributions and chromaticity distributions should bemeasured. By applying human factors to these results, therequirements can be established.

PDP International Forum ’08
Saturday, December 6, 2008
10:30–16:30
Toki Messe Niigata Convention Center(IDW ’08 Venue)
For further information, visit www.pdptm.org/forum/
150Thursday
3D2 - 4:
17:25

December 4
Invited Viewing Zones of Autostereoscopic Displays
and Their Measurement Methods
A. Yuuki*,*2, S. Uehara*,*3, K. Taira*,*4, G. Hamagishi*,*5,
K. Izumi*,*6, T. Nomura*,*7, K. Mashitani*,*8,
A. Miyazawa*,*9, T. Koike*,*10,*11, T. Horikoshi*,*12,
H. Ujike*,*13*Japanese Ergonomics Nat. Committee, Japan
Mitsubishi Elec., Japan*3NEC LCD Techs., Japan*4
Toshiba, Japan*5
Seiko Epson, Japan*63D Consortium, Japan*7
Sharp, Japan*8
Sanyo Elec., Japan*9NAMCO BANDAI Games, Japan*10Hitachi, Japan*11
Univ. of Tokyo, Japan*12NTT DOCOMO, Japan*13AIST, Japan*2

We discuss on QBVS(Qualified Binocular Viewing Space) from whereusers can watch images without visual fatigue caused by stereoscopic
displays and Q3DVS (Qualified 3D Viewing Space) from where users
can watch qualified 3D image and their measurement methods in caseof two and multi-view autostereoscopic displays.

IDW Outstanding
Poster Paper Award
This award will go to the most outstanding paper
selected from those presented at IDW ’08 poster
presentation.
The 2008 award winners will be announced on the
IDW website:
http://www.idw.ne.jp/award.html

SID 2009
International Symposium, Seminar and Exhibition
May 31 – June 5, 2009
San Antonio, Texas, USA
151

Thursday
3D2 - 5:
17:40

December 4
Invited Measurement of Multi-View and Integral
Photography Displays Based on Sampling in RaySpace
T. Koike*,*2,*3, A. Yuuki*,*4, S. Uehara*,*5, K. Taira*,*6,
G. Hamagishi*,*7, K. Izumi*,*8, T. Nomura*,*9,K. Mashitani*,*10, A. Miyazawa*,*11, T. Horikoshi*,*12,
H. Ujike*,*13*Japanese Ergonomics Nat. Committee, Japan
Hitachi, Japan*3Univ. of Tokyo, Japan*4
Mitsubishi Elec., Japan*5
NEC LCD Techs., Japan*6Toshiba, Japan*7
Seiko Epson, Japan*8
3D Consortium, Japan*9Sharp, Japan*10Sanyo Elec., Japan*11
NAMCO BANDAI Games, Japan*12NTT DOCOMO, Japan*13AIST, Japan*2

We present differences between multi-view and integral-photography
3D-displays based on sampling in ray space. For analyzing differences,
we introduce a ray sampling quality function, which calculates the
sampling quality of each 3D-display. We also present possible
measurement methods for each 3D display, because these differences
will relate to measurement methods.

Author Interviews
18:00 – 19:00

EXHIBITION
12:00–18:00
10:00–18:00
10:00–14:00

Wednesday, Dec. 3, 2008
Thursday, Dec. 4, 2008
Friday, Dec. 5, 2008

Exhibition Hall B
Toki Messe Niigata Convention CenterFree admission with your registration name tag.
152

Friday

December 5
Friday, December 5

9:00 - 10:15

Room 301

3D3: Hyper Realistic and 3D Display Systems (1)Chair:
Co-Chair:M. Hashimoto, NTT DATA, Japan
T. Mishina, NICT, Japan

3D3 - 1
9:00

Autostereoscopic 3D Display Characterization Using
Fourier Optics Instrument and Computation in 3D
Observer Space
P. Boher, T. Bignon, T. Leroux
ELDIM, France

Autostereoscopic 3D display characterization method based on highangular resolution Fourier optics instrument is presented. From theluminance or color measurements we predict what will be seen by anobserver in front of the display. 3D contrast, OVR and OVF can bevisualized and quantified in the 3D observer space.
3D3 - 2
9:15

Using Diffusive Adhesives to Reduce Moiré Patternof Auto-Stereoscopic Displays
J.-T. Lian*,**, M.-D. Chou*, F.-C. Lu*, C.-C. Chang*,
C.-L. Tsou*, T.-Y. Lin**, C.-N. Mo**

Chunghwa Picture Tubes, Taiwan**Nat. Taiwan Ocean Univ., Taiwan

Auto-stereoscopic displays used a LC panel for the parallax barrier anddriven on time multiplexing mode could get high performance. But Moiré
pattern is also appeared in the parallax barrier 3D display. We use thediffusive adhesive to reduce Moiré pattern and keep the Autostereoscopic effect at the same time.
3D3 - 3
9:30

Autostereoscopic Display Based on Patterned OLED
Backlight
U. Vogel, L. Kroker, J. Knobbe, H.-G. Dallmann,
M. Scholles, C. Grillberger, U. Todt, J. Amelung
Fraunhofer Inst. for Photonic Microsyss., Germany

A 3.5” 3D QVGA display will be presented, that is based on a highlyefficient, patterned and controllable OLED backlight. This technology
demonstrator combines several major achievements: large-area OLED
backlight, highly-efficient and fast-response OLED top-emitter, striped
patterned backlight, individual electronic driving for adaptive backlightcontrol, 3D mobile display application demonstrated.

153Friday
3D3 - 49:45

December 5
Floating 3D-Image Display Using Integral
Photography Display and Afocal Lens System
M. Ota*, T. Koike*,**, T. Naemura**Univ. of Tokyo, Japan**Hitachi, Japan

We present a floating 3D-image display using an integral photography
display and an afocal lens system. We used an afocal lens system tosuppress distortion of 3D-images and reduce the viewing zone caused
by a single lens system. Our method enables a widening of the viewing
zone of the 3D-display.
3D3 - 5
10:00

Prototyping and Optical Evaluation of 9-in. OCB
Time-Division-Multiplexing 18-View 3D Display
M. Kashiwagi, T. Saishu, K. Taira, H. Kobayashi,
Y. Hirayama
Toshiba, JapanWe developed an integral imaging time-division-multiplexing 18-view 3D
display, using 9” OCB-LCD, lenticular sheet, and active shutter. By
simulating a lens shape and a shutter structure to find the best
conditions, depth range and viewing angle, was enhanced and brighterand flicker-less 3D image with smooth motion parallax was obtained.
----- Break -----

10:40 - 11:45

Room 301

3D4: Hyper Realistic and 3D Display Systems (2)Chair:
Co-Chair:
3D4 - 1:
10:40

H. Kaneko, Tokyo Inst. of Tech., JapanS. Yano, NICT, Japan
Invited Development and Application of
NaturalVision: Challenge to Exceed Limit of RGBBased Imaging System
M. Hashimoto
NTT DATA, Japan

NaturalVision is a technique for high accurate color reproduction basedon multi-channel image acquisition and display using spectral
information. NaturalVision has being developing since 1999 founded by
National Institute of Information and Communications Technology(NICT). Past and current NaturalVision and its several applications arepresented in this paper.

154

3D4 - 2
11:00

Study of Stereo Capture System Setup with Image
Quality of Depth Map Rendering
J. C. Yang, C. S. Wu, K. Lee, S. H. Lai*
ITRI, Taiwan*Nat. Tsing Hua Univ., Taiwan

The developed system generates contents with specific format, image
plus depth, for 3D display devices from a stereo video/images. This
paper studies the image qualities of depth map rendering with different
setup parameters for both the converged and parallel captured system.
3D4 - 3
11:15

Fusibility of a Stereo Image Taken from an 8 mm
Imaging System
J.-Y. Son, D.-S. Lee, D.-H. Jung, S.-H. Kim, K.-T. Kim*
Daegu Univ., Taiwan*Hannam Univ., Korea

Stereo image pairs can be obtained from the images created by eachelemental horn antenna composing of an 8 millimeter Imaging System’s
focal plane array. The depth sense from the stereo image pairs can lastto 1.1% resolution of the original image but 2% for usual stereo images.
3D4 - 4
11:30

Analysis of Eye Response to Low Brightness 3D
Displays and Increase Brightness in 3D RPTV Using
Long Life, High Power DPR System
K. Li
Wavien, USA

3D display systems reduce the effective screen brightness by as muchas 10 times. This paper presents eye response analysis and a low cost
approach to increasing brightness in a 3D RPTV using the long life DPR
system, increasing the screen brightness by three times, while
maintaining acceptable lamp lifetime.
----- Lunch ----Author Interviews
17:40 – 18:40

Eurodisplay 2009 (IDRC 2009)
September 14–17, 2009
Rome, Italy
155

Thursday

December 4Workshop on
Applied Vision and Human Factors
Thursday, December 4
9:00 - 12:00

Exhibition Hall B

Poster VHFp: Applied Vision and Human Factors
VHFp - 1

The Proposal of Correction Method of ColorMatching Functions Using Genetic Algorithm
S. Ozaki, Y. Tokuda, G. Ohashi, Y. Shimodaira
Shizuoka Univ., Japan

This study corrects color-matching functions to reduce the gap between
colorimetric values and human perception of color. Color-matching
functions are approximated by Gaussian functions which are controlled
by parameters and then are corrected using genetic algorithm tooptimize these parameters. Experimental results show perceptual color
matching was improved.
VHFp - 2

A Study of ’Quasi’ Purity Discrimination Threshold in
Mesopic Condition
N. Ishikawa, G. Ohashi, Y. Shimodaira, Y. Shibata*,
M. Kitagawa*, H. Serizawa*
Shizuoka Univ., Japan*KOITO Manufacturing, Japan

Quasi’ purity discrimination was examined to examine color perception
in the mesopic condition. As the results, the overall tendency is similar
to the results of the photopic condition. A small dip was found in green
regions near 530 nm, where quasi purity discrimination is lower thanthose of neighboring wavelengths.
VHFp - 3

Methods of Error Detection by Proofreading on LCD
ScreenJ. Yamaguchi, H. Isono
Nippon Inst. of Tech., Japan

The present study compared a total of three proofreading methods forerror detection accuracy on an LCD screen. The results revealed thatthe methods used were proofreading by mouse dragging (MD) and oral
reading methods were more effective than the usual silent reading
method for detecting errors.

156

Thursday
VHFp - 4

December 4
The Influence of Ambient Luminance Level on
Perceptual Image Appearances
R. Ho, B.-J. Pong
ITRI, Taiwan

In this study, six test images were selected and rendered to form an
image set and assessed by a panel of observers in terms of a numberof perceptual appearances including colourfulness, naturalness,
sharpness and image quality. The experiment was conducted under
three different ambient luminance levels, respectively.
VHFp - 5

Subjective Evaluation for Indistinct Mura of LED
Backlight
Y. Masakura, T. Tamura, K. Nagamine*, S. Tomioka*
Tokyo Polytechnic Univ., Japan*
Sony, Japan

We examined subjective evaluations for artificial indistinct Mura images.
We revealed that three numerical indexes based on measured
luminance of Mura image, those were 1) Mura edge area, 2) low
luminance area and 3) maximum of luminance difference between Muraand the uniform image would be important for subjective evaluations.
VHFp - 6

Image Contrast Improvement Based on Histogram ofDifferential Gray-Levels Feature
Y. Higashi, F. Saitoh
Gifu Univ., Japan

This paper proposes a method that generates a Look-Up-Table from thehistogram based on the distributions of differential gray-levels andgradient of differential gray-levels by pixels. The experimental results
show that the resultant images with good contrast were generated by
the proposed method in comparison with by the conventional methods.
VHFp - 7

Scratched Photographic Image Restoration by Using
Variable-Sized Directional Filter
F. Saitoh, D. Takasao
Gifu Univ., Japan

This paper proposes a method to restore a photographic image
including some scratches. Three kinds of filters for extracting edges andthe variable-sized directional filter are applied to remove continuous
long scratches. The experimental results showed most of scratches
were removed by the proposed method.

157

Thursday
VHFp - 8

December 4
Photography Method for Dark Places by Using
Moving Image Analysis with Single Light Scanning
K. Okada, F. Saitoh
Gifu Univ., Japan

This paper proposes a photography method that uses a moving image
in the dark place. When the photography situation is dark, flashbulb
function is used generally, but there is the ineffective case. The
experimental results showed that the generated image by the proposed
method was good contrast.
VHFp - 9

Color Tonal Analysis on 4-Primary Color LCD System
H.-S. Chen, T.-T. Chang*, J.-F. Huang*Nat. Taiwan Univ. of S&T, Taiwan*ITRI, Taiwan

We proposed the effective color tonal analysis method on 4-color
display system. To effectively evaluate the tonal smoothness levels, thespatial filtering operations are applied to perform the edge detection. It’s
shown the Prewitt and Sobel operation work well to detect discontinuesedge on 4-color display system.
VHFp - 10

The Design of Ambient Light Compensation on TV
DeviceB. J. T.-C. Chen, H.-S. Chen, W.-K. Lin*, C.-Y. Chang*Nat. Taiwan Univ. of S&T, Taiwan*TECO, Taiwan

This paper introduces a new method to integrate a system model ofbuilding a comfortable and healthy environment for watching TV. Thismodel, which is named as Ambient Light Compensation Unit (ALCU).
The TV system will benefit to the promotion of image quality and visual
health on FPD field.
VHFp - 11

A Selective Adjustment Method for Image Quality
Improvement
J. Dong, F. Wang, S. L. Wu, C. L. Liu, L. G. Meng,
H. Wang
Xi’an Jiaotong Univ., China

A selective algorithm is employed to enhance the image brightness by
calculation between original and adjusting image derived from theoriginal one. In RGB mode, this algorithm can enlarge the color range
and improve saturation through the continuous distribution of grey levelin histogram while avoiding the decline of contrast.

158

Thursday
VHFp - 12

December 4
Moving Blur Edge Measurement Using Adapted
Contrast Sensitivity Function
Y.-Y. Lai, W.-H. Liao, R.-H. Chen, K.-C. Chang
Taiwan TFT LCD Assn., Taiwan

Perceived blur edge width (PBEW) had become a useful method toevaluate moving picture image quality. Contrast sensitivity function(CSF) is the major component. A novel adapted CSF was made by asubjective test. PBEW using the adapted CSF was verified that PBEW
is almost the same as using Barten’s CSF.
VHFp - 13

A Novel Analysis Method to Verify Moving Picture
Quality in Flat Panel Display
S. H. Park, K. H. Lee, I. C. Park, M. S. Yang, I. B. Kang
LG Display, Korea

MPQ related with not only response time, but also color shift. We show
behavior of color shift in different displays when picture is rapidly
moving with speed of 0ppf. MPCS of PDP and IPS-LCD in blur area ofmoving pictures shows ∆u’v’>0.03 and ∆u’v’ <0.005.
VHFp - 14

A Mura Inspection and Quantification System for
FPD
C.-W. Kuo, C.-H. Kuo, K.-C. Chang
Taiwan TFT-LCD Assn., Taiwan

Mura inspection and quantification system is proposed. Different types
of Laplacian of Gaussian (LoG) filter methods and blob analysis areused. We can detect four typical types of Muras: 1 Point, 2 Line, 3 Band,and 4 Light Leak. The developed human vision model can quantify JND
by contrast perception.
VHFp - 15

A Contrast Enhancement Method Using Dynamic
Range Based on Linear Segmentation
J.-S. Hwang, G.-H. Park, M. R. Choi
Hanyang Univ., Korea

In this paper, we propose the linear histogram equalization using parity
probability segmentation. Histogram Equalization is an effective method
for image contrast enhancement. However, it has unwanted artifact andunnatural look because of over-enhancement in contrast. The
experimental results show that the proposed method achieves contrast
enhancement and preserving naturalness.

159

Thursday

December 4

VHFp - 16

Analysis of Human Vision Models and Its Application
to Flat Panel Display
B.-W. Wu, Y.-C. Fang, W.-D. Chen
Nat. Kaohsiung First Univ. of S&T, Taiwan

This study explores thermal imaging recognition, and presents amethod for effectively choosing the features and processing the images
fully. Neural network technology is successfully applied to recognize
thermal imaging and predict MRTD (minimum resolvable temperature
difference), exceeding thermal imaging recognition under fatigue andthe limits of the human eye.
VHFp - 17

The Side Effects of Black Insertion on 26-in. TN TFTLCD
T.-C. Hsu, L.-H. Yeh, M.-W. Tsai
Chunghwa Picture Tubes, Taiwan

We implement Black Insertion technology on 26" TN TFT-LCD. This
technology could improve video image quality and reduce MPRT.
However, many side effects cause it could not be applied on mass
product. This paper would illustrate these side effects.
VHFp - 18L

A Novel Algorithm to Quantify Image Sticking
C. W. Chen, S. Y. Pen, Y. W. Fang, G. G. Guo,
K. S. Wang
AU Optronics, Taiwan

Image-sticking is one of thorny problems for LCD panels. In this paper,
we use the CCD system to measure the image-sticking patterns
generated by a LCD simulator and calculate quantification factor from anovel algorithm. The measured and analyzed results are comparablewith human judged levels.
VHFp - 19L

An Effective Contrast Enhancement Method forInfrared Imaging System
G. H. Park, J. S. Ko, C.-K. Ahn
Samsung Thales, Korea

We proposed an effective contrast enhancement method for infrared
imaging system. Proposed method uses an adaptive histogram
redistribution based on histogram partitioning to prevent the side-effectdue to the over-enhancement in luminance. The experimental results
show that proposed method has more effective performance comparedwith conventional methods.

160

Thursday

December 4

16:40 - 18:00

Marine Hall

VHF1/DES5: Contrast Enhancement
Chair:
Co-Chair:S. Clippingdale, NHK, Japan
M. A. Klompenhouwer, Philips, the Netherlands

VHF1/
DES5 - 1
16:40

Tone Mapping Method Using Local Contrast
Enhancement for High Dynamic Range Images
B.-Y. Kim, B.-H. Hwang, J.-H. Yun, M.-R. Choi
Hanyang Univ., Korea

In this paper, a tone mapping method using contrast enhancement forHigh Dynamic Range (HDR) is proposed. By applying the Modified
Histogram Adjustment (MHA) and the Local Contrast Enhancement
Volume (LCEV) with decomposed layers, the tone mapping is
performed effectively. The experimental results show that the proposed
method preserves local contrast and global dim and bright impression
with the naturalness of original images.
VHF1/
DES5 - 2
17:00

Gradation Quality Enhancement without Degradationin Texture Areas
Y. Okuno, T. Nakano, M. Yoshiyama, J. Asano
Samsung Yokohama Res. Inst., Japan

We have developed a gradation enhancement method for flat-panel
displays (FPD) that can display at resolutions of greater than eight bits.
This method allows appropriate distinction of gradation areas andtextured areas, making it possible to improve the smoothness ofgradation regions without loss of quality in textured regions.
VHF1/
DES5 - 3
17:20

Contrast Enhancement Method Using Limited
Histogram Binding
H.-W. Kang, G.-H. Park, B.-H. Hwang, S.-J. Lee,
J.-H. Yun, M.-R. Choi
Hanyang Univ., Korea

In this paper, Limited Histogram binding (LHB) is proposed for contrast
enhancement. LHB binds the low frequency histogram components
according to criterion and unbinds to preserve detail of original image.
The experimental results show that LHB suppresses the washed out
appearance or color distortion compared with conventional methods.

161

Thu./Fri.

December 4/5

VHF1/
DES5 - 4
17:40

Pixel Based Image Enhancement (PBIE) Technology
to Enhance Image Quality without Memory at
Portable System
C.-L. Wu, J.-S. Liao, Y.-N. Chu, W.-T. Tseng, H.-T. Yu
Chunghwa Picture Tubes, Taiwan

Chunghwa Picture Tubes, LTD. has performed the PbIE technology at
middle size display. This technique could real time enhancing image
quality without any frame buffer or image data distribution of pervious n1 frames, then the moving picture quality are enhanced automaticallyand adaptively based on the character of each pixel.
Author Interviews
18:00 – 19:00

Friday, December 5
9:00 - 10:30

Marine Hall

VHF2: Image Quality (1)Chair:
Co-Chair:
VHF2 - 1:
9:00

J. Miseli, Sun Microsyss., USA
H. Isono, Nippon Inst. of Tech., Japan
Invited An Integrating Sphere System to Realize VeryLow-Luminance Reference Light Sources
S. Kubota, T. Matsumoto, T. Shimura
Univ. of Tokyo, Japan

Double integrating spheres method is proven to be most reliable way to
reduce luminance on the first sphere wall to the second into very dark
region down to 3x10-5 cd/m2, which is quite useful in testing sensitivity
and linearity of spectrophotometers.
VHF2 - 2
9:30

Evaluation of FPD Mura Grade Using a Contrast
Sensitivity Function Filter
T. Asano, Y. Morimoto, T. Ikeda
Hiroshima Inst. of Tech., Japan

A novel method that can be used to evaluate mura grade on FPDs has
been developed. This method is capable of evaluating the edge gradientsof the mura. This is accomplished by converting the mura image into avisual sensitivity image using a contrast sensitivity function filter.
VHF2 - 3
9:50

The Parameters and Quantification Factor for the
Inspection of Image Sticking
Y.-C. Chen, S.-Y. Pan, P.-M. Liu, C.-C. Kuo, T.-J. Chang,
W.-L. Liao, A. Lien
AU Optronics, Taiwan

This paper investigated and clarified the influence of the externalparameters on the inspection of image sticking. Furthermore, aquantification factor derived from the measurement and analysis was
proposed, which is able to scientifically express the level of the image
sticking and well link to the perception of human.
162

Friday

December 5

VHF2 - 4
10:10

Effects of Culture, Ambient Illumination, andResolution on the Perceived Image Quality of Mobile
Displays
P.-H. Lin, P. Patterson*, S.-H. Hwang
Nat. Tsing Hua Univ., Taiwan*
Texas Tech. Univ., USA

Effects of Culture, Ambient Illumination, and Resolution on Image
quality of Mobile displays were studied. The results indicated that the
Chinese subjects were more sensitive than the American subjects whenevaluating the image quality on mobile displays.
----- Break -----

10:40 - 11:50

Marine Hall

VHF3: Image Quality (2)Chair:
Co-Chair:
VHF3 - 1:
10:40

S. Kubota, Univ. of Tokyo, JapanK. Masaoka, NHK, Japan
Invited ICDM Display Measurement Standard for Flat
Panel Displays
J. Miseli
Sun Microsyss., USA

2008 will mark the introduction of the most ambitious display metrology
standard yet written - the ICDM DMS (Display Measurement Standard).
It will be for flat panels and other displays, from module level tocompleted display assemblies.
VHF3 - 2
11:10

FPD Test Image Creation and Image Quality Analysis
H. S. Chen, S. H. Chen*, Y. C. Chen, W. K. Lin*,
B. J. Pong**Nat. Taiwan Univ. of S&T, Taiwan*TECO Elec. & Machinery, Taiwan**
ITRI, Taiwan

This paper aims to establish FPD image quality analysis proceduresfrom the viewpoints of standard test images and image color difference.
The psychophysical experiment of skin-color differences was
performed. The evaluated results hints the skin-images on Adobe RGB
monitor with 2 color difference units are similar to sRGB monitor.

163

Friday
VHF3 - 3
11:30

December 5
Perceptual Resolution of FPD Obtained by
Combination of Slanted-Edge SFR and ContrastSensitivity Function
S. W. Hsu, C. H. Chen, Z. Y. Chung
ITRI, Taiwan

Based on a slanted-camera and step-edge patterns method, thespectral-frequency responses (SFR) were calculated and multipliedwith contrast sensitivity functions (CSF) to find out perceptual andobjective resolutions of flat-panel display (FPD). Digital inputs of stepedge patterns were varied to study the dependence of resolution by
average luminance and macro-contrast.
----- Lunch -----

13:20 - 14:40

Marine Hall

VHF4: Color
Chair:
Co-Chair:Y. Shimodaira, Shizuoka Univ., Japan
T. Matsumoto, Univ. of Tokyo, Japan

VHF4 - 1
13:20

Study of the Optimal and Allowable Limits for Colorand Luminance Difference in Electronic Displays
Y. Hisatake, A. Ikeda, H. Ito, M. Obi, Y. Kawata,
A. Murayama
Toshiba Matsushita Display Tech., Japan

We have studied the dependency on color chromaticity and types ofimages of allowance for luminance and color difference in CIELAB color
space. ∆L* limit value is smaller than ∆Eab* and ∆Cab* values for fruits,
vegetable and artificial objects, while for flower objects, the scoredoesn’t depend on ∆L* value.
VHF4 - 2
13:40

Measurement of Color Viewing Angle for Displays
N. Funabiki, K. Adachi, S. Minami, J. Hashiguchi,
M. Kasahara
Advanced PDP Dev. Ctr., Japan

APDC has determined the criteria to define color viewing angle at whicha display maintains the same colors as viewed from straight on.
Through the several subjective experiments, the color shift ∆u’v’, being
equal to 0.015, proved to be a reasonable threshold, assuring the samecolor impression.

164

Friday
VHF4 - 3
14:00

December 5
Wide Color-Gamut LCMs Using Multi-Phosphor
White LED and Image-Processing Engine
J.-S. Li, C.-C. Lai, T.-Y. Chang, C.-F. Hsu, W.-C. Wang
Wintek, Taiwan

The MPW LEDs improve 13% NTSC ratio of LCD in comparison withstandard white LEDs under the assumption of equal power
consumption and brightness. The pixel-level image-processing engine
obtains separately about 45% image saturation expansion and 96%
image contrast improvement without hue distortion.
VHF4 - 4
14:20

The Main Effects of Color Shift Increase in Wide
Color Gamut for Mobile-MVA Application
S. L. Yang, S. C. Fan Jiang, C. J. Hu, W. M. Huang
AU Optronics, Taiwan

In MVA type display, color shift will increase when the color gamut iswider.Since color wash out is not the only main effect to cause the color
shift. There is other effects included color filter spectrum shape and lightleakage will dominate the color shift in different color range.
----- Break -----

15:00 - 16:20

Marine Hall

VHF5: Vision and Human Factors
Chair:
Co-Chair:

H. Isono, Nippon Inst. of Tech., Japan
N. Hiruma, NHK, Japan

VHF5 - 1
15:00

Effects of TV Display Size on Visual Fatigue in a
Domestic Viewing Environment
K. Sakamoto, S. Aoyama, S. Asahara, K. Yamashita*,
A. Okada*
Panasonic, Japan*Osaka City Univ., Japan

We measured the effect of TV display size on visual fatigue using 42inch and 65-inch. Our results indicate that the optimum viewing distancefor minimizing visual fatigue lies between 165 and 220 cm, a semiabsolute distance, rather than a strict relative distance such as threetimes the screen height (3H).

165

Friday
VHF5 - 2
15:20

December 5
Perceived Threshold of Brightness Gradient in
Display Devices
B. Katagiri, K. Sekiya, T. Kawakami, T. Uchida,
Y. Kuratomi, K. Takamura, H. Sato, Y. Suzuki
Tohoku Univ., Japan

In this study, we noticed the gradient of the brightness modulation as a
candidate of parameters in the perception of human eyes. Then weclarified one of the concerns on relation between the perception ofhuman eyes and the gradient of the brightness change by anexperiment.
VHF5 - 3
15:40

Car Navigation Systems in which Perceived Depth of
Virtual Traffic Signs Presented over Windscreen
M. Suzuki, K. Uehira
Kanagawa Inst. of Tech., Japan

Depth perception of virtual objects in mixed/augmented reality iscontrollable by artificial motion parallax simulating motion parallax
caused by motion of observers. Three-dimensional displays using theartificial motion parallax technique would enable new car navigation
systems that depth perception of the virtual traffic signs presented
above the windshield is controlled.
VHF5 - 4
16:00

Area Segmentation for Road Image Based on
Categorical Colors
T. Yaguchi, T. Ashiguchi, K. Kijima, S. Ishida*,
Y. Nakanishi*, K. Syouji, M. Ayama
Utsunomiya Univ., Japan*Honda R&D, Japan

Area segmentation for road images using categorical colors ispresented. Basic map of categorical colors is constructed in the L*a*b*
space based on the color naming experiment and further adjustment. A
shifted database of categorical colors for images with orangish tone isalso prepared by trial and error.
----- Break -----

IDMC/3DSA/Asia Display 2009
April 27–30, 2009
Taipei, Taiwan
166

Friday

December 5

16:40 - 17:40

Marine Hall

VHF6: Moving Image Quality
Chair:
Co-Chair:J. Bergquist, Nokia Japan, Japan
H. Isono, Nippon Inst. of Tech., Japan

VHF6 - 1
16:40

Evaluation on Motion Blur Indexes by Subjective
Tests
Y. W. Fang, J. K. Luo, J. F. Chen, R. L. Dong,
K. S. Wang, C. C. Chen
AU Optronics, Taiwan

For verifying motion blur by quantified indexes, we design a subjective
testing method. Through this testing method, the correlations between
perceived blur width and motion blur indexes are investigated. The
contrast-based blur edge width (CBEW) for characterizing motion blur isalso proposed from subjective testing results.
VHF6 - 2
17:00

Motion Blur Characterization with Dynamic
Modulation Transfer Functions
Y. Zhang, Y. Xu, W. Song, X. Li, K. Teunissen*,
I. Heynderickx**,***Southeast Univ., China*Philips Consumer Lifestyle, the Netherlands**
Philips Res. Labs., the Netherlands***Delft Univ., the Netherlands

The dynamic MTF is proposed to characterize the temporal behavior of
LCDs. It is based on an inter-level transition measurement. The resultsof two perception experiments show that the model correlates well withperception, except for quasi-static patterns. While model predictions,based on measured impulse responses, are less accurate.
VHF6 - 3
17:20

Color Breakup: Taxonomy, Measurement, andRemedyC.-N. Wu, W.-C. Cheng, W.-C. Tai*, C.-C. Chang*,
K.-H. Cheng**Nat. Chiao Tung Univ., Taiwan*
Chunghwa Picture Tubes, Taiwan**Nat. Central Univ., Taiwan

Saccade-induced color breakup was measured on a saccadic display
and a contingent display was designed to minimize color breakup by
detecting eye movement with electrooculogram signals.
Author Interviews
17:40 – 18:40
Supporting Organization:
Technical Group on Information Display, ITE
167

Wednesday

December 3

Workshop on Projection and Large-Area
Displays, and Their Components
Wednesday, December 3
13:20 - 13:25

Room 201

Opening
Opening Remarks
13:20
Z. Tajima, Mobara Atecs, Japan
13:25 - 14:40

Room 201

LAD1: Solid State Light Sources
Chair:
Co-Chair:

C. L. Bruzzone, 3M, USA
S. Shikama, Mitsubishi Elec., Japan

LAD1 - 1
13:25

LED Brightness Increase for Projection Displays
Multiplexing and Recycling
K. Li
Wavien, USA

LED has gained its importance in micro-projectors to potentially highoutput, home theater systems. In these systems, the outputs are lower
and sizes are larger than desirable. This paper describes practical, andcompact, recycling and multiplexing systems that provide brightness
increases, and allow projectors to achieve outputs beyond current
levels.
LAD1 - 2
13:45

High Power LED Light Source for Projection System
T. Kaneko, R. Mori, K. Takahashi
Saitama Univ., Japan

We proposed the high power LED light source for projection systemusing a three-dimensional LED array and ellipsoidal reflection mirror.
The light source enables the high condensing rate of light and theincrease of the LED current by liquid cooling. This system can achieve
high intensity light source.

168

Wednesday

December 3

LAD1 - 3

Withdrawn

LAD1 - 4L
14:05

Speckle-Reduced Holographic Laser Projector
E. BuckleyLight Blue Optics, USA

Light Blue Optics’ holographic laser projection technology exploits thephysical process of two-dimensional diffraction to form video images.
The Light Blue Optics (LBO) technology takes an entirely new approach
to hologram generation and display enabling, for the first time, a highquality, real-time holographic projector.
LAD1 - 5L: Invited Super-Slim Laser TV with Newly Developed
14:20
Laser Light Sources
H. Sugiura, T. Sasagawa, A. Michimori, M. Kuwata,
A. Nagase, E. Toide, T. Yanagisawa, S. Yamamoto,Y. Hirano, M. Usui*, S. Teramatsu*, J. Someya
Mitsubishi Elec., Japan*Mitsubishi Digital Elect. America, USA
A new light source for laser TVs has been developed along with a 65inch super slim laser TV that employs the light source. In this stylish
laser TV set, a depth of 255 mm has been realized.
----- Break -----

15:00 - 16:25

Room 201

LAD2: LCOS Light Valves
Chair:
Co-Chair:K. Guttag, Syndiant, USA
H. Nakano, Barco, Japan

LAD2 - 1
15:00

Analysis of Fringe-Field Effects in VA Microdisplaysfor Image Quality Improvement
D. Cuypers, H. De Smet*, A. Van Calster*
IMEC, Belgium*
Ghent Univ., Belgium

Characterizing the distortions caused by fringe fields is important in
LCOS projection panels for professional applications. The effects ofreverse tilt due to fringe fields in high resolution devices are explored indetail. Special attention is given to often overlooked items such as
dielectric layers and oblique incidence.

169

Wednesday
LAD2 - 2
15:20

December 3
854x600 Pixel LCOS Microdisplay with 5.4µm Pixel
Pitch for Pico-Projectors
K. Guttag, J. Lund, C. Waller
Syndiant, USA

This paper describes the world’s smallest SVGA (800x600) and WVGA
(854x480) microdisplay that enables high-resolution images in ultraportable products. The device uses Liquid Crystal on Silicon (LCOS)
technology, supports single panel field sequential color operation, has a
5.4-micron pixel pitch, and is less than 7mm tall.
LAD2 - 3
15:40

Color-Filter LCOS Microdisplay with Space Dithering
for Virtual Resolution Improvement
H. C. Huang, C. H. Wong, Y. Y. Ho*, J. Lai*
Hong Kong Univ. of S&T, Hong Kong*
Himax Display, Taiwan

We present a color-filter LCOS microdisplay with space dithering for
virtual resolution improvement. This 0.38" LCOS microdisplay has
320x240xRGBW sub-pixels for an improved panel reflectivity from 20%
of R, G and B sub-pixels to 35%. With the space dithering algorithm,
this QVGA microdisplay can exhibit a virtual VGA resolution.
LAD2 - 4:
16:00

Invited The D-ILA Device for the World’s Highest
Definition (8K4K) Projection System
T. Nagoya, T. Kozakai, T. Suzuki, M. Furuya, T. Iwasa
JVC, JapanJVC has developed the world’s highest resolution D-ILA device for theSuper High-Vision projector. So, we reduced pixel size and increased
pixel resolution to 8192 x 4320 (8K4K). Additionally, we have realized
the world’s highest definition image and 1,000,000:1 contrast ratio,
applying this device to HDR(High Dynamic Range) projector.
----- Break -----

BANQUET
Wednesday, December 3, 2008
19:30–21:30
Room “Continental” (4F)
Hotel Okura Niigata
See page 9 for details
170

Wednesday

December 3

16:40 - 17:45

Room 201

LAD3: Illumination and Projection Optics
Chair:
Co-Chair:
LAD3 - 1:
16:40

K. Sarayeddine, Optivent, France
T. Hayashi, 3M, Japan
Invited A New Approach for 3D in Digital Cinema
R. Matsuura, M. Fushiki
Dolby Japan, Japan

Historically, 3D movies had never quite achieved a phenomenal andsustaining success despite having reached scattered peaks of
excitement. In this paper, we discuss 3D technologies for cinema alongwith our development and try to understand the past failures andconsider if the current wave is real this time.
LAD3 - 2
17:05

Ultra Wide Angle Optical System for Laser TV and
Short Through Distance Front Projector
K. Sarayeddine, P. Benoit
Optinvent, France

We’ve developed a wide angle optical engine using either UHP or Lasersources. In this paper, we present the description of this optical engine.
The system could be used for Short Throw Distance to display large
image with a projector located near the screen.
LAD3 - 3
17:25

Super-Wide Angle Projection Lens with Free-Form
Lens and Free-Form Mirror for Projector
M. Yatsu, K. Hirata
Hitachi, Japan

By using 2 free-form Lenses and 1 free-form Mirror for the first time in
the world, we developed “Super-wide angle projection Lens”. It realized
60 inches image at projection distance 415 mm, and the angle ofincident at screen center is about 57 degree.

Author Interviews
18:00 – 19:00

IDW Best Paper Award
This award will go to the most outstanding paper
selected from those presented at IDW ’08.
The 2008 award winners will be announced on the
IDW website:
http://www.idw.ne.jp/award.html
171

Thursday

December 4
Thursday, December 4

9:00 - 10:25

Room 201

MEMS1/LAD4: Novel MEMS Projection Optical
Technologies
Chair:
Co-Chair:
MEMS1/
LAD4 - 1:
9:05

N. W. Hagood, Pixtronix, USA
H. Kanayama, Sanyo Elec., Japan
Invited Miniaturized MEMS-Based Laser Projectors
Suited for Integration into Mobile Devices
M. Scholles, H. Dallmann, K. Frommhagen, C. Gerwig,
J. Knobbe, M. Schwarzenberg
Fraunhofer IPMS, Germany

This contribution describes recent results in the development ofminiaturized laser projectors, which use MEMS micro scanning mirrors
for light deflection. Advancements include increase in system
performance, miniaturization of the electronics by ASIC integration of
the analog front end for the mirror, and ways for reduction of Speckle
artifacts.
MEMS1/
LAD4 - 2:
9:25

Invited Compact, High Brightness Sequential LED
Illumination for Projectors
C. L. Bruzzone, R. E. English Jr.*
3M, USA*REE Optical Syss., USA

An arrangement of polarizing beam splitter, retarders, and dichroic
mirrors provides a compact and efficient combiner for red, green, andblue light from separate LED packages. A 0.55" DMD engine based on
this illuminator produced on-screen flux of 188 lumens from 58W of
LED input power, using an F/2.4 pupil.
MEMS1/
LAD4 - 3:
9:45

Invited Emerging Projection System
M.-L. Chen, C.-S. Chen
Young Optics, Taiwan

LED and Laser are new generation light source for projection system. (i)The new illumination architecture and evolutional de-speckle method
are the core challenges and accomplishment in laser illumination
design. (ii) LED, focus on lighting efficiency utilization in LED lightengine development especially for portable projection system.

172

Thursday
MEMS1/
LAD4 - 4:
10:05

December 4
Invited Making MEMS Devices at a Standard CMOS
Foundry
M. Bellis
Miradia, USA

Miradia is pioneering the ability to design and manufacture MEMS
devices at a standard CMOS semiconductor foundry. This paper will
focus on the tools and processes that Miradia put in place to enable theproduction of complex MEMS devices.
----- Break -----

13:20 - 16:20

Exhibition Hall B

Poster LADp: Projection
LADp - 1

DPR Lamp for Projection Display Systems - Today
and Tomorrow
K. Li
Wavien, USA

Arc lamps provide the most cost effective solution for projection display
systems. Whether arc lamps will be obsolete and replaced by LEDs andLasers will be of great importance. In this talk, various applications
using DPR that are feasible today and anticipated needs of tomorrow
will be presented.

Author Interviews
18:00 – 19:00

Supporting Organizations:Technical Group on Information Display, ITE
Laser Display Technology Research Group, Optical Society of JapanIDW Outstanding
Poster Paper Award
This award will go to the most outstanding paper
selected from those presented at IDW ’08 poster
presentation.
The 2008 award winners will be announced on the
IDW website:
http://www.idw.ne.jp/award.html
173

Wednesday

December 3

Workshop on Electronic Paper
Wednesday, December 3
13:20 - 14:45

Room 302

EP1: Electrophoretic Displays
Chair:
Co-Chair:EP1 - 1:
13:20

T. Kitamura, Chiba Univ., Japan
N.-S. Roh, Samsung Elect., Korea
Invited Bright Color Electronic Paper
K.-M. H. Lenssen, P. J. Baesjou, M. H. W. M. vanDelden, L. W. G. Stofmeel, A. R. M. Verschueren,
J. J. van Glabbeek, J. T. M. Osenga, R. M. Schuurbiers
Philips Res., the Netherlands

We have developed an in-plane electrophoretic concept, which enables
realization of full-color reflective panels with a higher brightness thanpresent e-paper technologies, without compromising paper-like
properties like large viewing angle and ultra-low power consumption. An
additional advantage (e.g. for future low-cost manufacturing) is that apassive-matrix configuration is also possible.
EP1 - 2:
13:45

Invited Recent Developments in Microcup
Electrophoretic Displays
R. Sprague
SiPix Imaging, USA

This paper will describe recent developments in microcup
electrophoretic displays. New media is available that enables highbrightness (>30%), high contrast (>9:1), and high speed (<.5 second
response), along with excellent lifetime and bistability. Results will beshown using active matrix backplanes for applications in ereaders andretail signs.
EP1 - 3
14:10

Active Matrix Electrophoretic Display with Micro-Cup
Structure
Q.-M. Lu, H.-H. Chen, J.-S. Liao, Y.-N. Chu, W.-T. Tseng,
H.-T. Yu
Chunghwa Picture Tubes, Taiwan

Chunghwa Picture Tubes, LTD. has successfully developed 6” and 8”
Active Matrix Electrophoretic Display modules with the micro-cup
structure. The characteristics of AMEPD comprise reflective paper-likeappearance, readability, portability, affordability, ultra-low power
consumption and high resolution.

174

Wednesday
EP1 - 4L
14:30

December 3
The Effect of Introducing Metal Bus Electrode into
Fully Transparent TFT Array for Color Electronic
Paper
N. Ikeda, M. Ito, C. Miyazaki, K. Murata, Y. Kokubo,
M. Ishizaki, Y. Ugajin
Toppan Printing, Japan

In order to realize large-area “transparent electronics”, we propose to
introduce narrow metal bus electrodes into transparent TFT array. The 5µm width Al-alloy bus electrode was integrated into ITO electrodes
without deteriorating the transmittance. We have successfully driven
5.35 inch QVGA color electronic paper by Front Drive Structure.
----- Break -----

15:00 - 16:05

Room 302

EP2: Electrowetting Displays and Others
Chair:
Co-Chair:EP2 - 1:
15:00

A. Suzuki, Ricoh, Japan
H. Arisawa, Fuji Xerox, Japan
Invited Electrowetting-Based Displays for Portable
Multi-Media Devices
R. Hayes, A. Giraldo*, F. Li*, J. Feenstra*
Liquavista, Hong Kong
*Liquavista, the Netherlands

Electrowetting-based displays combine high optical and electricalefficiency with milli-second switching times. As such they can be used
to enable video content to be shown on portable paper-like displays.
The optical properties of EWD panels and their further enhancement
are reported in this symposioum paper.
EP2 - 2:
15:25

Invited Droplet Driven Electrowetting Displays:
Ambient Light Performance and Color Reproduction
K. Blankenbach, A. Schmoll, A. Bitmann*, F. Bartels*,
J. Rawert**, D. Jerosch**Pforzheim Univ., Germany*
Bartels Mikrotechnik, Germany**Advanced Display Tech., Germany

ADT developed bi-stable electrowetting displays (e-paper) with highreflectivity and wide temperature range. They are suitable for low
resolution (status indicators, 8-Segment) and billboards. Pixel size
covers 0.5 to 10 mm, color is reproduced by printer-like CMY-stacks.
Our measurements and simulations demonstrate sunlight readability
and good color reproduction.

175

Wednesday
EP2 - 3L
15:50

December 3
Mobile-Phone Centric Viewer System with 13.1-inch
4096-color Electronic Paper Display
K. NishimuraKDDI R&D Labs., Japan

A novel viewer system that brings break-through into display size ofmobile phone is demonstrated. Using the system, pictorial data stored
in a mobile phone can be viewable on a large-size full-color electronic
paper display. Potential applications for the system are proposed anddiscussed.
----- Break -----

16:40 - 17:45

Room 302

EP3: Various EP Technologies
Chair:
Co-Chair:EP3 - 1:
16:40

M. Omodani, Tokai Univ., Japan
Y. Toko, Stanley Elec., Japan
Invited Multi-Color Electronic Papers Using OrganicMetallic Hybrid Polymers
M. Higuchi*,***

NIMS, Japan**JST, Japan

Organic-metallic hybrid polymers have a specific color based on MLCT
absorption. Their electrochromic functions are caused byelectrochemical redox of the metal ions in the polymer. The polymer
with two different metal ions shows multi-color electrochromic
properties. Electrochromic devices using the polymers serve as a new
type of electronic papers.
EP3 - 2
17:05

High Performance Pen Tracking on Electronic Paper
Displays
G. Feng, M. J. Gormish, S. Chemishkian, K. F. Gudan,
J. Barrus
Ricoh Innovations, USA

On most electronic paper displays (EPDs), low update rates lead to apoor user experience especially for pen-based markups. Also, ghosting
artifacts often occur when pen markups are updated. This paper
presents a real-time pen tracking system with significant ghosting
reduction implemented on an unmodified E Ink display system.

176

Wed./Thu.
EP3 - 3
17:25

December 3/4
Reflective Electronic Paper by Polarization andElectrophoresis of Toner in Oil
C.-H. Hsu, C.-P. Chiu, M.-T. Chiang*, C.-N. Mo*,
S.-K. Fan
Nat. Chiao Tung Univ., Taiwan*Chunghwa Picture Tubes, Taiwan

Toners were manipulated by polarization and electrophoresis in oil. By
polarization, toners were aligned in particle chains, yielding a brightstate. When electrophoresis exerted on the toners, negatively charged
particles were attracted on the positively-biased electrode and delivereda dark state. The e-paper was characterized with frequency, voltage
and concentration.

Author Interviews
18:00 – 19:00

Thursday, December 4
13:20 - 16:20

Exhibition Hall B

Poster EPp: Electronic Paper Technologies
EPp - 1

Near Point Measurement on an Electronic Paper for
Assessment of Eye Fatigue
S. Inoue, M. Sakamoto, M. Omodani
Tokai Univ., JapanThe measurement procedure based on near point decrement showedsuperior correlation with subjective fatigue assessment and so is areasonable metric for assessing eye fatigue. Near point distance ismeasured on three media, LCD, Electronic Paper, and paper, revealingthat Electronic Paper is less fatiguing, like paper, than LCD.
EPp - 2Multiline Addressing of Quick Response Liquid
Powder Display (QR-LPD) Using Non-Negative Matrix
Factorization
S. Kaneko, M. Asakawa, R. Hattori, Y. Masuda*,
N. Nihei*, A. Yokoo*, S. Yamada*
Kyushu Univ., Japan*Bridgestone, JapanThe availability and possibility of multiline addressing (MLA) for Quick
Response Liquid Powder Display (QR-LPD) using Non-negative
Matrix Factorization (NMF) were discussed. The NMF adopted togenerate the multiline data was processed by MATLAB. The multiline
data were sent to QR-LPD panel and displayed the image on thepanel successfully.

177

Thursday
EPp - 3

December 4
Preparation of Microcapsules by Interfacial
Polycondensation and Its Application inElectrophoretic Display
S. J. Hwang, L. L. Wang*, J. C. Huang*, J. Y. Jheng*,
W. M. Chou*, H. H. Yu*
Nat. United Univ., Taiwan*Nat. Formosa Univ., Taiwan

Cationic surfactants modified P-type semiconductor material wasshelled by Jelly Fig pectin and Gelatin first. Then a new microcapsules
electrophoretic display device was designed and its image contrast was
influenced by the particle sizes of the microcapsules.
EPp - 4

Preparation of Conductive Absorber Layer for
Cholesteric LCDs
C.-C. Weng, S.-W. Wu
ITRI, Taiwan

Herein, we used exfoliated graphite to substitute the conductive polymer
or carbon in the absorber layer solution. The surface resistivity ofabsorber layer decrease 3 orders from 10E13 to 10E10. The conductive
polymer amount could be reduced from 16% to 4%wt with only 2%wt of
exfoliated graphite substituting.
EPp - 5Reflective Electronic Paper by Particle Polarization
on a 5x5 Pixel Array
C.-P. Chiu, C.-H. Hsu, M.-T. Chiang*, C.-N. Mo*,
S.-K. Fan
Nat. Chiao Tung Univ., Taiwan
Chunghwa Picture Tubes, Taiwan*

A reflective electronic paper based on particle polarization wasinvestigated on a 5x5 pixel array. The device was packaged without
trapped air bubbles by treating the surface to be hydrophilic with O2
plasma. Different alphabets have been displayed on the 5x5 pixel array,demonstrating the controllability of the device.
EPp - 6L

Liquid Powder Display with Nano-Composite Particle
E. H. Hwang, E. J. Cho, C. G. Jhun, B. S. Bae,
S.-B. Kwon, C. H. Lee*, J. G. Kim*, Y. S. Ahn*, S. Lee*,I. Park*, K. H. Choi*
Hoseo Univ., Korea*KITECH, Korea

To improve the operational reliability, we propose core-shell type ofnano-composite polymer particles for LPD. We have developed aprototype of flexible LPD with our new particles and ITO coated PET
substrates. We demonstrate the electro-optical characteristics andoperational reliability.

178

Thursday
EPp - 7L

December 4
Development of Fast Moving Ball Actuator Mode forElectronic-Paper Displays
D. Kim, H. Choi, D. Lee, M. Hong, S. Kim*, J. Lee*,
B. Bae*, D. Jung**, B. Kim**, C. Lee**
Korea Univ., Korea*
Hoseo Univ., Korea**Dongjin Semichem, Korea

We demonstrate the novel display mode as called Fast Moving Ball
Actuator (FMBA) using micro-sized metal balls for the light shutter;surface of the balls can be charged up by contacting with electrode andtheir locations are controlled by small applied field to obtain optically on
and off state.

Supporting Organization:
The Imaging Society of JapanIDW Tutorial in Japanese
Tuesday, December 2, 2008
12:45–17:00
Room 301
Toki Messe Niigata Convention Center
Detailed information will be available:
http://www.sidchapters.org/japan/index.htm
Contact Address:idw.tutorial.wz@hitachi.com

IDW Outstanding
Poster Paper Award
This award will go to the most outstanding paper
selected from those presented at IDW ’08 poster
presentation.
The 2008 award winners will be announced on the
IDW website:
http://www.idw.ne.jp/award.html
179

Thursday

December 4Workshop on
MEMS for Future Displays andRelated Electron Devices
Thursday, December 4
9:00 - 9:05

Room 201

Opening
Opening Remarks
9:00
M. Nakamoto, Shizuoka Univ., Japan
9:05 - 10:25

Room 201

MEMS1/LAD4: Novel MEMS Projection Optical
Technologies
Chair:
Co-Chair:
MEMS1/
LAD4 - 1:
9:05

N. W. Hagood, Pixtronix, USA
H. Kanayama, Sanyo Elec., Japan
Invited Miniaturized MEMS-Based Laser Projectors
Suited for Integration into Mobile Devices
M. Scholles, H. Dallmann, K. Frommhagen, C. Gerwig,
J. Knobbe, M. Schwarzenberg
Fraunhofer IPMS, Germany

This contribution describes recent results in the development ofminiaturized laser projectors, which use MEMS micro scanning mirrors
for light deflection. Advancements include increase in system
performance, miniaturization of the electronics by ASIC integration of
the analog front end for the mirror, and ways for reduction of Speckle
artifacts.
MEMS1/
LAD4 - 2:
9:25

Invited Compact, High Brightness Sequential LED
Illumination for Projectors
C. L. Bruzzone, R. E. English Jr.*
3M, USA*REE Optical Syss., USA

An arrangement of polarizing beam splitter, retarders, and dichroic
mirrors provides a compact and efficient combiner for red, green, andblue light from separate LED packages. A 0.55" DMD engine based on
this illuminator produced on-screen flux of 188 lumens from 58W of
LED input power, using an F/2.4 pupil.

180

Thursday
MEMS1/
LAD4 - 3:
9:45

December 4
Invited Emerging Projection System
M.-L. Chen, C.-S. Chen
Young Optics, Taiwan

LED and Laser are new generation light source for projection system. (i)The new illumination architecture and evolutional de-speckle method
are the core challenges and accomplishment in laser illumination
design. (ii) LED, focus on lighting efficiency utilization in LED lightengine development especially for portable projection system.
MEMS1/
LAD4 - 4:
10:05

Invited Making MEMS Devices at a Standard CMOS
Foundry
M. Bellis
Miradia, USA

Miradia is pioneering the ability to design and manufacture MEMS
devices at a standard CMOS semiconductor foundry. This paper will
focus on the tools and processes that Miradia put in place to enable theproduction of complex MEMS devices.
----- Break -----

10:40 - 12:15

Room 201

MEMS2: Emerging MEMS Technologies
Chair:
Co-Chair:M. Esashi, Tohoku Univ., JapanT. Komoda, Panasonic Elec. Works, Japan

MEMS2 - 1: Invited Recent Molecular Nano Device Progress
10:40
I. Ohdomari
Waseda Univ., JapanThe recent progress in nano device technology as an approach to give
solutions to MM, MTM and BC is reviewed in terms of novel fabrication
processes, novel device structures and novel materials. Importance of
so-called “experimental science based on computation” also isaddressed.
MEMS2 - 2: Invited Microfluidic Technology for Tissue
11:00
Engineering
Y. Tsuda, Y. Morimoto, S. Takeuchi
Univ. of Tokyo, JapanWe describe a three-dimensional (3D) cell culture system using
monodisperse gel beads. Cells were non-invasively encapsulated inbiocompatible hydrogels by using a 3D microfluidic axisymmetric flowfocusing device. This technique holds great promise for the further
study of fundamental cell-cell communication and reconstruction of
viable tissues for the regenerative medicine.

181Thursday
MEMS2 - 3
11:20

December 4
Nano Porous Silica Structures for Thermally
Insulated MEMS Devices
Y. Nishijima, H. Yamanaka, M. Kirihara
Panasonic Elec. Works, Japan

In this paper, we report on the first successful incorporation of nanoporous silica into MEMS structure. A novel nano porous silica based
suspended structure was proposed and the prototype was fabricated forthe demands of the MEMS devices that need thermal insulation
characteristic.
MEMS2 - 4
11:35

Development of Micro Reflector Type Light Guide
Plate Stamper by Advanced Dry Etching Process
T. Miyaguchi, T. Sato, M. Hiraishi, H. Saito
Ind. Res. Inst. of Niigata Pref., Japan

Light guide plates of LCDs need to be thinner and more efficient inbrightness. The newly developed dry etching process made it possible
to produce cone shaped reflectors with a required height of several tensof micrometers and the taper angle on the light guide plate.
MEMS2 - 5
11:50

Novel Power Saving Design for LED Backlight
System with Color Filter-Less LCD System
L. Li, K.-H. Chen*, C.-L. Liu, M.-T. Ho, C.-N. Mo
Chunghwa Picture Tubes, Taiwan*Nat. Chiao Tung Univ., Taiwan

Novel driving architect of an LED backlight system using field sequential
color algorithm on color filter-less TFT-LCD has been developed. It canbe treated as a power saving solution which consists of a single DC
voltage converter and an integrated LED driving system for RGB-LED
backlight.
MEMS2 - 6L
12:05

The Effect of Microstructure on the Reflectivity Lossof Single Crystal Silicon
C. Wei, Y. Shih, Y. Chien, J. Chen*
Tatung Univ., Taiwan*Chunghwa Picture Tubes, Taiwan

The alkaline texture etching has the advantages for integrating damage
removal and structure texturing in a single step. The microstructure
produced by different concentration, temperature and the associatedreflectivity is investigated. The results show there seems to different
optimal texture mechanism which leads to reduction of reflectivity loss.
----- Lunch -----

182

Thursday

December 4

13:20 - 14:40

Room 201

MEMS3: Fundamental Process Technologies
Chair:
Co-Chair:I. Ohdomari, Waseda Univ., Japan
Y. Bonnassieux, Ecole Polytech., France

MEMS3 - 1: Invited Application Oriented MEMS
13:20
M. Esashi
Tohoku Univ., Japan
Silicon MEMS as electrostatically levitated rotational gyroscope and 2D
optical scanner, and wafer level packaged devices as integrated
capacitive pressure sensor and MEMS switch are described. MEMS
which use non-silicon materials as LTCC with electrical feedthrough,
SiC (silicon carbide) and LiNbO3 are also described.
MEMS3 - 2
13:40

Debris-Free Laser Dicing for Multi-Layered MEMS
M. Fujita*,**, Y. Izawa**, Y. Tsurumi**, S. Tanaka***,H. Fukushi***, K. Sueda**, Y. Nakata**, N. Miyanaga**,
M. Esashi****Inst. for Laser Tech., Japan**

Osaka Univ., Japan***Tohoku Univ., Japan

A novel debris-free in-air laser dicing technology has been developed,
which combines two processes: dicing guide fabrication and wafer
separation. The first process is the internal transformation using apulsed laser. The second process is mechanical separation by bending
stress or thermally-induced crack propagation using a CO2 laser.
MEMS3 - 3
13:55

“BEANS Project” : Heterogeneous Technology
Convergence Process Development Project
J. Adachi, Y. Takei, M. Takeda, A. Yusa
Micromachine Ctr., JapanThe new Japanese national project named “Hetero-Functional
Integrated Device Process Development Project (BEANS Project)” hadbeen launched in July, 2008. Target areas of process development are“Bio/Organic Materials Integration Process”, “Novel fabrication
technology for 3-D Nano-structures” and “Large Area Continuous
Process of Micro/Nano Structure”.

183

Thursday

December 4

MEMS3 - 4
14:10

Conditions of Micromirror Lifted by Buckled Bridges
Using Film Stress
M. Sasaki, K. Hane*, D. Briand**, W. Noell**, N. de Rooij**
Toyota Technological Inst., Japan*Tohoku Univ., Japan**
Univ. of Neuchatel, Switzerland

Bridges buckled by the film stress can realize three-dimensional
structures such as vertical comb drive actuator. We have demonstrated
the micromirror lifted by the buckled bridges. The detailed profiles of theburidge and the lifted micromirror are examined. This clears the effect of
the bend and the design differences.
MEMS3 - 5
14:25

A Novel 15.4-in. Transflective Color Sequential LCD
C.-L. Liu, C.-N. Mo, C.-F. Huang*, H.-F. Yin, W.-C. Tai,
S.-J. Chiou, M.-D. Chou
Chunghwa Picture Tubes, Taiwan*
Tatung Univ., Taiwan

A novel transflective liquid crystal display uses a structure of color
sequential. This present design combines such a new structurereflective backlight to improve reflective light to meet the specification
being sunlight readable, and a digital feedback system to probe
environment for the purpose of power saving.
----- Break -----

15:00 - 15:50

Room 201

MEMS4/AMD4: MEMS Displays and Imaging
Chair:
Co-Chair:MEMS4/
AMD4 - 1:
15:00

M. Scholles, Fraunhofer IPMS, Germany
M. Bellis, Meradia, USA
Invited MEMS-Based Direct View Displays Using
Digital Micro Shutters
N. W. Hagood, L. Steyn, J. Fijol, J. Gandhi, T. Brosnihan,
S. Lewis, G. Fike, R. Barton, M. Halfman, R. S. Payne
Pixtronix, USA

The Pixtronix DMS (Digital Micro Shutter) display technology, basedon MEMS micro-shutters, is presented. Experimental performanceachieved on 2.5" QVGA samples is shown, including 24-bit color, 145%
NTSC (CIE 1976) color gamut, 400:1 contrast ratio, and 170° view
angles, all at 1/4 the power consumption of comparable TFT-LCD
display modules.

184

Thursday
MEMS4/
AMD4 - 2
15:20

December 4
MEMS Membrane Switches Backplane for Matrix
Driven Large Sign Display
K. Senda, B. S. Bae*, M. Esashi**
Sumitomo Precision Prod., Japan*School of Display Eng., Korea**
Tohoku Univ., Japan

We successfully developed membrane switches using FPC (flecible
printed circuit) material and process. Such a process has the progressof low cost backplane for flexible large signage display. We appliedfabricated membratne switches to electrophorectic display for active
matrix driving.
MEMS4/
AMD4 - 3
15:35

Active Matrix Flexible Display Array Fabricated by
MEMS Printing Techniques
C. Lo, O.-H. Huttunen*, J. Iitola-Keinanen*, J. Petaja*,
J. Hast*, A. Maaninen*, H. Kopola*, H. Fujita,
H. Toshiyoshi
Univ. of Tokyo, Japan*VTT Tech. Res. Ctr. of Finland, Finland

A fully printing techniques fabricated active matrix display array wasdemonstrated on flexible substrate by using Fabry-Perot interference
effect. Printing techniques of flexography, lift-off, gravure, andlamination were used for roll-to-roll-ready process on 125µm polymer
substrate. Red, green, and blue colors were successfully tuned forrealization of full color.
MEMS4/
AMD4 - 4

Withdrawn----- Break -----PDP International Forum ’08
Saturday, December 6, 2008
10:30–16:30
Toki Messe Niigata Convention Center(IDW ’08 Venue)
For further information, visit www.pdptm.org/forum/
185

Thursday

December 4

16:35 - 18:00

Room 201

MEMS5: Optical MEMS and Device Technologies
Chair:
Co-Chair:

M. Nakamoto, Shizuoka Univ., JapanJ. Jang, Kyung Hee Univ., Korea

MEMS5 - 1: Invited Field Emission from Carbon Nanotubes and
16:35
Metallic Nanowires
C. S. Cojocaru, Y. Bonnassieux, N. Le Sech*,
B. Marquart, S. Xavier*, P. Legagneux*, D. Pribat
Ecole PolyTech., CNRS, France*Thales Res. & Tech., France
In this paper, we present some comparisons concerning field emission
as well as processing parameters from two types of nanostructures,
namely multiwall carbon nanotubes grown by plasma enhanced
chemical vapor deposition and metal nanowires grown byelectrochemical deposition in porous membranes. Various treatments
are presented, either during or after deposition.
MEMS5 - 2: Invited Direct Excitation of Xenon by Ballistic
16:55
Electrons Emitted from Nanocrystalline Silicon
Planar Cathode and Vacuum-Ultraviolet Light
Emission
T. Ichihara, T. Hatai, N. Koshida*
Panasonic Elec. Works, Japan*Tokyo Univ. A&T, JapanThe effect of electron incidence into xenon gas molecules has been
investigated using a nanocrystalline silicon (nc-Si) ballistic emitter.
Vacuum-ultraviolet (VUV) light emission is observed without
discharging. Energetic electrons directly excite xenon molecules
followed by radiative relaxations. Discharge-free light emission is
expected to lead to high efficacy mercury-free fluorescent lamps.
MEMS5 - 3
17:15

Selective Growth of Vertically Aligned Carbon
Nanotubes on Metal Foil
I. O. Jeong, J. H. Ryu, S. Manivannan, H. E. Lim,J. W. Lim, B. T. Son, K. C. Park, J. Jang
Kyung Hee Univ., Korea

A simple method is proposed for the growth of vertically aligned CNTs
on metal foil using the tri-ode dc-PECVD for practical device
applications. The metal surface was treated by an acid and then used
for the growth of CNTs. The selective growth is realized using barrier
layer on metal surface.

186

Thursday
MEMS5 - 4
17:30

December 4Electron Emission Properties of Carbon Nanotube
Emitters Grown with Micro Molding in Capillary(MIMIC) Assisted Process
H. E. Lim, N. Y. Song, J. H. Ryu, J. W. Lim, B. T. Son,
J. Jang, K. C. Park
Kyung Hee Univ., Korea

Carbon nanotube arrays were selectively patterned using micro molding
in capillary (MIMIC) process. Also we can control the thickness of theseed forming resist using MIMIC process. The structures of CNTs canbe easily controlled depending on the thickness of resist film. The turnon field for 10 µA/cm2 was 2.2 V/µm.
MEMS5 - 5
17:45

Simulation of Nanostructure Transfer Mold Field
Emitter Arrays
J. H. Moon, M. Nakamoto
Shizuoka Univ., Japan

By a numerical analysis, field emission characteristics for thenanostructure transfer mold field emitter arrays were depend on tipradius of emitter as well as their integration. The smaller emitter tips
with tip-radius of less than 5 nm can exhibit enhanced electron emission
properties due to the higher field enhancement factor.

Author Interviews
18:00 – 19:00

IDW ’09
The 16th International Display Workshops
December 9-11, 2009
World Convention Center Summit
Phoenix Seagaia Resort
Miyazaki, Japan
http://www.idw.ne.jp/
187

Wednesday

December 3

Workshop on
Display Electronic Systems
Wednesday, December 3
13:20 - 16:20

Exhibition Hall B

Poster DESp: Display Electronic Systems
DESp - 1

Improvement of Displayed Image Quality via Zero-D
LCD Backlight Modulation
L. Kerofsky
Sharp Labs. of America, USA

Backlight modulation is shown to improve the static contrast of
displayed dim images. Static contrast is improved not by improving thedisplay contrast ratio itself but by modulation of the backlight combinedwith image compensation to adjust the display range based on theimage display range.
DESp - 2

Design Choices in LED Backlight LCD TV
P. A. Cirkel, A. Ševo*, E. H. A. Langendijk**
Philips Consumer Lifestyle, Belgium*Philips Consumer Lifestyle, the Netherlands**Philips Res., the Netherlands

An LED backlit LCD TV was developed. Properties like contrast, motion
portrayal, color performance, and TV set thickness were optimized bytuning the type and number of LEDs, the number of dimmablesegments, the type of LED drivers and the type of LCD panel in our
LCD TV set.
DESp - 3

LCD Power Saving Using Adaptive Global Backlight
Dimming
M. Chen, H. J. Peng, W. Zhang, W. H. Niu, C.-K. Hung,
G. P. Qiu
ASTRI, Hong Kong

We proposed a method to adaptively dim the LCD backlight and tune
the image signal to preserve display brightness and save display power
simultaneously. We achieved a power saving more than 20% by
average and effectively minimize image distortion. This method can beapplied for either CCFL or LED backlight.

188

Wednesday
DESp - 4

December 3
Adaptive Selection Algorithm for LED Backlight of
LCD-TVs
H. S. Cho, H. Kim, O. K. Kwon
Hanyang Univ., Korea

A new adaptive dimming algorithm is proposed to reduce backlight
power consumption and improve image quality in LCD-TVs. The
proposed algorithm is a local dimming algorithm to use mapping
function selectively. The backlight power consumption is reduced to23~45% and the distortion value is 7~30% by applying the proposed
algorithm.
DESp - 5

Adaptive Local Dimming Backlight for Liquid-Crystal
Displays
J.-Y. An, S.-E. Kim, W.-J. Song, T.-W. Lee*, C.-G. Kim*
POSTECH, Korea*LG Display, Korea

To increase the contrast ratio, local dimming algorithms have been
proposed. In the local dimming algorithms, a dimming duty controls the
backlight luminance of each local block, so the dimming duty is to be
determined considering the original image. In this paper, we propose
how to determine the dimming duty.
DESp - 6

Pre-Compensated X-Y Channel-Driving-White LED
Backlight for 46-in. LCD TV
D. Y. Cho, W. S. Oh, S. W. Choi, K. M. Cho, G. W. Moon,
B. C. Yang*, T. S. Jang*
KAIST, Korea*
Samsung Elect., Korea

A conventional X-Y channel driving can achieve the comparable image
improvement and reduced power consumption with much fewer
converters than those of block driving. However, there are two
drawbacks to the conventional one. To solve these problems, anaverage current control system with pre-compensation 2D channel
driving algorithm is proposed.
DESp - 7

Low-Power Consumption Color-Filterless 15.4-in. TNTFT Notebook
S.-J. Chiou, W.-C. Tai, C.-C. Chen, C.-L. Liu, C.-N. Mo
Chunghwa Picture Tubes, Taiwan

A novel color filterless LCD has been developed in the field sequential
color notebook platform. The RGB-LED backlight maintains 200 nitsbrightness and power consumption at 3W by using the multi-area
control algorithm. Further, it is still readable clearly without backlight.
FSC-NB can achieve low cost and power.

189

Wednesday
DESp - 8

December 3
Dynamic Contrast Enhancement Method for Digital
Image Display
Z.-H. Liang*,**, Z.-G. Wang*, C.-L. Liu*, X.-N. Zhang**Xi’an Jiaotong Univ., China**Sichuan Changhong Elect. Group, China

An enhancement degree controllable histogram equalization (EDCHE)
method is developed in this paper. In this method, the drawback ofhistogram equalization applied to digital video signal, which could
produces unrealistic effects in images because it does not have themechanisms that adjust the degree of enhancement, is overcome.
DESp - 9Integration of an External Display System in Mobile
Phone and Microdisplay for Multimedia Applications
C.-F. Huang, C.-C. Weng, C.-L. Liu*, C.-N. Mo*
Tatung Univ., Taiwan*
Chunghwa Picture Tubes, Taiwan

The present work is to design an interface, by which the video content
of a mobile phone can be forwarded to an external microdisplay. Such adisplay system is easier for people to appreciate the content ofmultimedia communication, since the microdisplay is able to provide avirtual large screen.
DESp - 10

Accurate Estimation of Component Thermal Stress
M.-L. Tai, W.-J. Chen, T.-K. Yeh, W.-L. Huang, S.-K. Wei
Chunghwa Picture Tubes, Taiwan

We had proposed fast and accurate component thermal stressestimation and the experiments show that the proposed fast thermal
stress estimation methodology with adaptive filtering methodology can
get good prediction efficiently. Now, we will propose one complete
solution to the component thermal stress survey for the display
electronic system.
DESp - 11

An Experimental Approach to Super High Resolution
Image Generation using Image Shift
H. Okamura, T. Hashimoto, H. Okui, Y. Shimodaira
Shizuoka Univ., Japan

We propose the generation method of the high resolution image using
shifted images. Our method uses images that are taken with highprecise and very small moving. In this paper, we challenged thegeneration of double-digit of times higher resolution image using 100
pictures.

190

Wednesday
DESp - 12

December 3
Low Power Driving for TFT-LCD Application
S.-P. Choi, K.-W. Seo, J.-S. Kim, M.-H. Lee, M.-K. Han*
Samsung Elect., Korea*
Seoul Nat. Univ., Korea

This work presents two methods of low power consumption for TFTLCD application. The first : periodical control of static power
consumption, the second : gradual driving capacity adjustment.
Compared to the conventional, the proposed methods show the overall
decrease of power consumption 11% and 12%, respectively.
DESp - 13

A Simple Method to Implement Overdrive
Technology in a Display System
M. O. Tareq, A. Bhowmik*, S. W. Lee
Kyung Hee Univ., Korea*Intel, USA

A simple overdrive implementation technology in a display system ispresented. Overdrive values are easily calculated using a third orderequation that for all the transitions. The parameters of the equation canbe extracted by a few measurements.
DESp - 14

Withdrawn

DESp - 15

Dynamic Frame Compensation for LCD Motion Blur
Reduction
E. G. Chen, T.-F. Chiang, A. Cho, K.-F. Li, K.-C. Chan,
S.-H. Chen, T.-H. Hsieh
InnoLux Display, Taiwan

An improvement over conventional flexible black insertion, dynamic
frame compensation with enhanced motion blur reduction and lessflicker, is proposed. The new technique has similar hardware complexity
as conventional dynamic frame compensation. MPRT was reduced by
24% and flicker reduction of 17%.
DESp - 16

Adaptive Block Motion Estimation Based on Frame
Difference for Frame Rate Upconversion
T. I. Kwak, J. H. Yun, H. H. Cho, M. R. Choi
Hanyang Univ., Korea

In this paper, we propose adaptively expanded block motion estimation
based on frame difference for frame rate up conversion. The proposed
algorithm executes using an adaptively expanded block in order to get
more accurate motion vector. In experiments, the proposed algorithm
shows better performance and lower complexity than conventionalalgorithm.

191

Wednesday
DESp - 17

December 3
Motion Adaptive Frame Interpolation Based on
Shortest Path Correlation
S. J. Lee, J. H. Yun, B. H. Hwang, M. R. Choi
Hanyang Univ., Korea

In this paper, we propose a motion adaptive frame interpolation method
which provides image quality enhancement by shortest path motion
correlation. It consists of motion detection with morphological operationand motion directional adaptive frame interpolation. It can achieve aclear image with a low computational amount and simple structure.
DESp - 18

Advanced Algorithms for Fast Motion Estimation
B.-H. Hwang, S.-W. Choi, T.-I. Kwak, J.-H. Yun,
M.-R. Choi
Hanyang Univ., Korea

Motion estimation is an important and computationally intensive task invideo coding applications. In this paper, we introduce Advanced
Algorithms for Fast Motion Estimation (AAFME) classifying blocks andperforming separate processing. Experimental results show that
AAFME reduces computation and increases PSNR compared withconventional algorithms.
DESp - 19L

Electronic Invisible Code Display Unit for
Collaborative Activity
Y. Matsumoto, K. Sakamoto, S. Nomura*, T. Hirotomi**,K. Shiwaku**, M. Hirakawa**
Konan Univ., Japan*Nagaoka Univ., Japan**Shimane Univ., Japan

The invisible codes provide us with an operating environment using
pen-like device. However, this technology is applied to the only paper
media. The authors think we want to realize an interaction using theinvisible code on an electrical media. In this paper, we propose anelectronic invisible code displaying unit.
DESp - 20L

4-Views Display System for Collaborative Work on
Round Table
T. Yamanari, K. Sakamoto, S. Nomura*, T. Hirotomi**,K. Shiwaku**, M. Hirakawa**
Konan Univ., Japan*Nagaoka Univ., Japan**Shimane Univ, JapanOn the life review activity, a therapist puts pictures on the table so as totrigger a talk. However some observers may perceive upside down
images if they sit down opposite the therapist. To overcome thisproblem, we have developed the display system which can be viewed
from any direction.
192

Wednesday

December 3

16:35 - 16:40

Snow Hall A

Opening
Opening Remarks
16:35
H. Okumura, Toshiba, Japan
16:40 - 17:55

Snow Hall A

DES1: Novel Electronic Display and Driving
Chair:
Co-Chair:
DES1 - 1:
16:40

H. Okumura, Toshiba, Japan
Y. Kudo, Hitachi, Japan
Invited Application of Bi-Axial MEMS Technology for
Enabling Miniature Projection Display
M. Niesten, R. Hannigan, A. Tokman
Microvision, USA

A projector with a height of less than 7 mm has been developed. The
projector, based on proprietary PicoPtm technology, uses a twodimensional MEMS scanner and lasers to display images with a WVGA
resolution while consuming as little as 1.5 W.
DES1 - 2:
17:00

Invited A Full Color Eyewear Display Using
Holographic Planar Waveguides
H. Mukawa, K. Akutsu, I. Matsumura, S. Nakano,
T. Yoshida, M. Kuwahara, K. Aiki
Sony, JapanA full color eyewear display with over 85% see-through transmittanceand 16-degree horizontal field of view was developed. Very low color
crosstalk, less than 0.008 ∆u’v’ uniformity and 120% NTSC color gamut
were achieved. Waveguides with two in- and out-coupling hologram
elements enabled simple configuration with side-mounted opticalengines.
DES1 - 3
17:20

A Multi-bit/cycle 12-bit Cyclic-DAC for TFT-LCD
Column Drivers
H. N. Nguyen, Y. S. Jang, Y. S. Son*, S. T. Ryu, S. G. Lee
Info. & Commun. Univ., Korea*Silicon Works, Korea

A 12-bit cyclic DAC with multi-bit conversion per cycle is proposed.
Passive conversion has been used for low power high speed
conversion. 12-bit conversion is done within 1.5 µs and the output isdriven during the rest of 1-H time. The DAC has been designed for a
0.35-µm CMOS technology.

193

Wed./Thu.

December 3/4

DES1 - 4L
17:40

The Design of Adaptive Anti-Aliasing Filter for
Subpixel-Based Down-Sampling
L. Fang, O. C. Au
Hong Kong Univ. of S&T, Hong Kong

Subpixel-based down-sampling causes color fringing artifacts. We
propose an adaptive filter based on edge detection to suppress color
fringing. Both horizontal and vertical down-samplings are considered.
Moreover, a good cut-off frequency is chosen to obtain extra
information. The proposed filter can remove visible color fringing while
retaining the luminance sharpness.

Author Interviews
18:00 – 19:00

Thursday, December 4
9:00 - 10:20

Marine Hall

DES2: High Dynamic Range Display Technologies
Chair:
Co-Chair:
DES2 - 1:
9:00

M. Klompenhouwer, Philips, the Netherlands
A. Nagase, Mitsubishi Elec., Japan
Invited Advanced High Dynamic Range Displays
H. Seetzen, T. Wan, P. Longhurst
Dolby Canada, CanadaHigh Dynamic Range displays utilize local dimming technology toincrease luminance, contrast, color gamut and power efficiency of
conventional LCD. We describe techniques to optimize color
performance and power efficiency of HDR displays through the use ofadvanced backlight designs and algorithms.
DES2 - 2
9:20

Novel Algorithm for LCD Backlight Dimming by
Simultaneous Optimization of Backlight Luminanceand Gamma Conversion Function
M. Baba, R. Nonaka, G. Itoh, S. Araki*, S. Kawaguchi*,M. Takeoka*, K. Nakao*
Toshiba, Japan*Toshiba Matsushita Display Tech., Japan

In this paper, a novel LCD backlight dimming algorithm to improve acontrast ratio and power consumption of an LCD is proposed. In thisalgorithm, backlight luminance and a gamma conversion function of an
input image are optimized simultaneously. Prototype LCDs introducing
the proposed backlight dimming algorithm were developed.

194

Thursday
DES2 - 3
9:40

December 4
Three-Primary LEDs Used Adaptive Local Dimming
Backlight for High Contrast LCD-TV
W. Zhang, H.-J. Peng, C.-K. Hung, C.-J. Tsai, K.-W. Ng,
D.-D. Huang
Hong Kong Appl. S&T Res. Inst., Hong Kong

With local dimming colored LED backlight, wide color gamut, large
power saving and high contrast can be achieved. However, color
crosstalk could damage image quality. We propose an algorithm toavoid color distortion and maintain aforementioned advantaged
performance. The algorithm is successfully implemented in a 47 inch
high contrast LCD-TV.
DES2 - 4
10:00

A Local Dimming Color-Sequential Liquid-Crystal
Display
C. C. Tsai, C. P. Su, H. M. Chen, W. C. Tai, C. L. Liu,
C. N. Mo
Chunghwa Picture Tubes, Taiwan

A Local Dimming Color-Sequential Liquid-Crystal Display doesn’t havecolor filters. The driving method of the provided Field Sequential Color
display is a combination of Multi-area Scanning algorithm and Local
Dimming method. It can greatly reduce the power consumption andincrease the contrast and color situation.
----- Break -----

10:40 - 12:00

Marine Hall

DES3: High Image Quality Display Technologies
Chair:
Co-Chair:
DES3 - 1:
10:40

H. Sasaki, Toshiba, Japan
S. Ono, Panasonic, Japan
Invited Dynamic Resolution of Video Display
Systems
M. Klompenhouwer, F. van Heesch
Philips Res. Labs., the Netherlands

A video display system must reproduce moving images with highresolution, i.e. it should have a high ‘dynamic resolution’. This paper
discusses dynamic resolution from a system perspective, taking into
account properties of the display as well as the video signal. It is shownhow dynamic resolution can be characterized, and examples are given.

195

Thursday
DES3 - 2
11:00

December 4
Realization of Multiple Color Gamuts in OCB Field
Sequential Color LCDs Using LED Scanning
Backlights
H. Murai, K. Sekiya, K. Wako, T. Kishimoto, T. Ishinabe*,T. Uchida*Res. Inst. for Advanced Liquid Crystal Tech., Japan*Tohoku Univ., Japan

We produced a 6.5inch-diagonal full-HDTV LCD portable monitor.
Since we adopted field sequential color method combined with ablockwise scanning backlight with RGB LEDs for it, we could easily add
a feature to switch the LED’s wide color gamut to the standard sRGB
color gamut on user’s demand.
DES3 - 3
11:20

Motion Quality Improvement of Double Frame Rate
LCD by Real Response Overdrive
H.-T. Lin, C.-C. Chiu, C.-H. Chen
Chunghwa Picture Tubes, Taiwan

RROD (Real Response OverDrive) has been developed for accurately
controlling high frame rate liquid crystal panel, proposed method only
store up one frame image could sequentially control two frames overdrive image and efficiently reduce response time of liquid crystal.
DES3 - 4
11:40

Reconsideration of 45dB-PSNR Criterion for FPD
Peripheral Devices
H. Sasaki
Toshiba, Japan

A proposed “bit depth analysis” promotes deeper understanding on“45dB curse”: a widely-accepted, but usually-misunderstood 45dB
PSNR criterion for image compression. Our analysis shows useful
guideline to investigate further cost-down of high-quality display
peripheral devices. The Barten model well predicts our 2AFC
experimental results.
----- Lunch -----

IDMC/3DSA/Asia Display 2009
April 27–30, 2009
Taipei, Taiwan
196

Thursday

December 4

15:00 - 16:20

Marine Hall

DES4: Color Fidelity Systems
Chair:
Co-Chair:
DES4 - 1:
15:00

N. Ohta, Rochester Inst. of Tech., USA
H. Okumura, Toshiba, Japan
Invited Some Issues on Imaging and Display
Technologies and a Proposal of an Image System for
Colorimetric Reproduction
Y. Shimodaira
Shizuoka Univ., Japan

Drawbacks on color reproduction in image systems are analyzed when
they are applied to fields required strict color control. Discussions arefocused on color reproduction that is an un-developed factor withinoverall image system in future. According to the discussions, a CMS is
proposed where colorimetric color reproduction is essential.
DES4 - 2:
15:20

Invited DisplayPort Version 1.1a and Projected Deep
Color Extension
A. Kobayashi
ST Microelect., USA

DisplayPort is scalable and extensible by design, capable oftransporting an HD A/V stream over one high-speed pair. Without fieldof use restrictions, it is applicable from hand-held devices to public
video walls. Technical overview of DisplayPort Version 1.1a andprojected, upcoming extensions of this open standard will be provided.
DES4 - 3:
15:40

Invited Development of New Evaluation Method for
Display Image Quality: Color Distribution Index
T. Fujine, T. Kanda, Y. Yoshida, M. Sugino, M. Teragawa,Y. Yamamoto*, N. Ohta**
Sharp, Japan*CIS Labs., Japan**
Rochester Inst. of Tech., USA

We developed new evaluation method for display image quality using
Color Distribution Index. It considers gamut, contrast, maximum
luminance, gamma, bit depth and JND to evaluate the ability forreproducing visibly smooth gradation. We clarified 12bit is needed forlatest LCD-TV, and suggested overall characteristics of TV should bebalanced.

197

Thursday
DES4 - 4
16:00

December 4
Six-Primary LCD Color Separation for Wide-Gamut
xvYCC Images
P.-L. Sun, H.-S. Chen*, C.-K. Chang
Shih Hsin Univ., Taiwan*Nat. Univ. of S&T, Taiwan

We present a method to transform color from wide gamut xvYCC space
to six-primary color signals with its best-available display gamut. It
contains three stages: (1) generate RGB-to- RGBCMY data for different
sub-gamuts, (2) create xvYCC-to-RGBCMY transfer matrices based on
the above data, (3) select a proper matrix for transformation.
16:40 - 18:00

Marine Hall

VHF1/DES5: Contrast Enhancement
Chair:
Co-Chair:S. Clippingdale, NHK, Japan
M. A. Klompenhouwer, Philips, the Netherlands

VHF1/
DES5 - 1
16:40

Tone Mapping Method Using Local Contrast
Enhancement for High Dynamic Range Images
B.-Y. Kim, B.-H. Hwang, J.-H. Yun, M.-R. Choi
Hanyang Univ., Korea

In this paper, a tone mapping method using contrast enhancement forHigh Dynamic Range (HDR) is proposed. By applying the Modified
Histogram Adjustment (MHA) and the Local Contrast Enhancement
Volume (LCEV) with decomposed layers, the tone mapping is
performed effectively. The experimental results show that the proposed
method preserves local contrast and global dim and bright impression
with the naturalness of original images.
VHF1/
DES5 - 2
17:00

Gradation Quality Enhancement without Degradationin Texture Areas
Y. Okuno, T. Nakano, M. Yoshiyama, J. Asano
Samsung Yokohama Res. Inst., Japan

We have developed a gradation enhancement method for flat-panel
displays (FPD) that can display at resolutions of greater than eight bits.
This method allows appropriate distinction of gradation areas andtextured areas, making it possible to improve the smoothness ofgradation regions without loss of quality in textured regions.

198

Thursday
VHF1/
DES5 - 3
17:20

December 4
Contrast Enhancement Method Using Limited
Histogram Binding
H.-W. Kang, G.-H. Park, B.-H. Hwang, S.-J. Lee,
J.-H. Yun, M.-R. Choi
Hanyang Univ., Korea

In this paper, Limited Histogram binding (LHB) is proposed for contrast
enhancement. LHB binds the low frequency histogram components
according to criterion and unbinds to preserve detail of original image.
The experimental results show that LHB suppresses the washed out
appearance or color distortion compared with conventional methods.
VHF1/
DES5 - 4
17:40

Pixel Based Image Enhancement (PBIE) Technology
to Enhance Image Quality without Memory at
Portable System
C.-L. Wu, J.-S. Liao, Y.-N. Chu, W.-T. Tseng, H.-T. Yu
Chunghwa Picture Tubes, Taiwan

Chunghwa Picture Tubes, LTD. has performed the PbIE technology at
middle size display. This technique could real time enhancing image
quality without any frame buffer or image data distribution of pervious n1 frames, then the moving picture quality are enhanced automaticallyand adaptively based on the character of each pixel.

Author Interviews
18:00 – 19:00

Supporting Organizations:Technical Group on Consumer Electronics, ITE
Technical Committee on Electronic Information Displays, Electronics
Society, IEICEIDW ’09
The 16th International Display Workshops
December 9-11, 2009
World Convention Center Summit
Phoenix Seagaia Resort
Miyazaki, Japan
http://www.idw.ne.jp/
199

Thursday

December 4

Topical Session on Display
Technologies for Professional Use
Thursday, December 4
13:20 - 13:25

Marine Hall

Opening
Opening Remarks
13:20
K. Sekiya, Tohoku Univ., Japan
13:25 - 14:40

Marine Hall

DPU1: Display Technologies for Professional Use
Chair:
Co-Chair:
DPU1 - 1:
13:25

K. Sekiya, Tohoku Univ., Japan
T. Matsumoto, Univ. of Tokyo, Japan
Invited Required Characteristics for Flat Panel
Displays as a Broadcast Master Monitor in theTransition Era from Cathode Ray Tube
M. Sugawara
NHK, JapanThe master monitors used in broadcast program production play a
crucial role in keeping the picture quality high and consistent. The
transition from CRTs to FPDs will entail identifying the requirements for
FPD master monitors. This paper describes the work of standardization
bodies on this issue and the current status.
DPU1 - 2:
13:40

Invited Master Monitors - The European View
R. A. Salmon*,***BBC Res., UK**EBU

This paper presents the work of the EBU technical group P/Display (ofwhich the Author is chairman) which has, over the last two years, been
considering the Broadcasters’ requirements for monitors in the
television production environment.

200

Thursday
DPU1 - 3:
13:55

December 4
Invited The Most Appropriate Characteristics as a
Master Monitor for Broadcasting Use
H. Kouchi
NHK, Japan

In TV broadcasting field, TV monitor as a master monitor is very
important to keep the good picture quality. This paper describes themonitor performances required the master monitor and the mostappropriate characteristics of a Flat Panel Display based on thecomparative picture quality assessment test.
DPU1 - 4:
14:10

Invited Consistent Image Presentation for ColorCritical Work and Medical Diagnosis
T. Matsui, S. Yamaguchi, H. Moriwaki, J. Yonemitsu,
A. Deyama, J. Sakuta, N. Hashimoto, T. Yasuda
Eizo Nanao, Japan

What may happen unless consistent presentation is guaranteed? Colorcritical professionals may see final output different from what they saw
on the display screen. Accuracy of medical diagnosis may be damaged.
This paper enumerates requirements to realize consistent presentationin each application and describes technologies to meet eachrequirement in detail.
DPU1 - 5:
14:25

Invited A Software Simulation Framework to Predict
Clinical Performance of Medical Displays
T. Kimpe, C. Marchéssoux, G. Spalla, B. Goossens*,
H. Hallez**, E. Vansteenkiste*, S. Staelens**, W. Philips*
BARCO NV, Belgium*
TELIN-IPI, Ghent Univ.-IBBT, Belgium**
IBiTech, Ghent Univ.-IBBT, BelgiumThis paper describes a software simulation framework that can predictclinical performance of medical displays without the need to build
prototypes or perform extensive clinical studies. Therefore design
alternatives can be evaluated more quickly and in a cost-effective way.
----- Break ----Author Interviews
18:00 – 19:00

Organizers
Workshop on Display Electronic Systems
Workshop on Applied Vision and Human Factors
Workshop on Projection and Large-Area Displays, and Their
Components

201

Thursday

December 4

Topical Session on Flexible Displays
Thursday, December 4
9:00 - 10:00

Snow Hall A

FLX1: Flexible OLED Technologies
Chair:
Co-Chair:

K. Nakayama, Yamagata Univ., JapanJ. J. Brown, Universal Display, USA

FLX1 - 1
9:00

3M Barrier Film Solutions and Light Extraction
Technology
F. McCormick, S. Lamansky, M. Roehrig, A. Nachtigal,
J. Ramos, J. Pieper, S. Finley, D. Stegall, J.-Y. Zhang
3M, USA

Transparent barrier films for flexible OLEDs have been made by vacuumroll-to-roll coating. WVTRs in the 10-6 g/m2/day range have been
demonstrated. Pressure sensitive adhesives have been developed foruse with the barrier films. The films have been combined withnanostructure-based light extractors to enable brighter, lower power
consumption OLEDs.
FLX1 - 2
9:15

Thin Film Encapsulation of AMOLED Displays with
Polyurea/Al2O3 Hybrid Multi-Layers
Y. G. Lee, I. S. Kee, H. S. Shim, Y. H. Choi, X. Bulliard,
Y. W. Jin, S. Y. Lee
Samsung Advanced Inst. of Tech., Korea

Thin film encapsulation of OLEDs based on alternated Polyurea/Al2O3
hybrid multi-layers is investigated. All process steps were performed atroom temperature. Device operating lifetime performance was over
86%, as compared with glass encapsulation, and the transmittance ofthin film multilayered structure was over 90% in the visible region.
FLX1 - 3
9:30

Permeation Measurements on Ultra-High Barrier
Layers for Encapsulation of Flexible Electronic
Devices
H. Nörenberg
Technolox, UK

OLEDs for display applications and lighting, and other devices based onplastic substrates may need barrier layers as protection against ingressof water vapour. We have developed permeation measurement
instruments based on the total pressure method that can measurepermeation rates in the low 10-5 or even 10-6 g/m2/day range.

202

Thursday
FLX1 - 4
9:45

December 4
Solution Processed Thin Film Transistors
Incorporating a Soluble Pentacene Semiconductor
C. J. Newsome, J. J. M. Halls, T. Kugler, C. E. Murphy,
G. L. Whiting, J. H. Burroughes
Cambridge Display Tech., UK

High mobility, solution processed thin film transistors have beendeveloped using 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS
pentacene). We show that by optimising the conditions forcrystallisation of the material and by reducing the contact resistanceusing source and drain electrode pre-treatments, field effect mobilities
can be improved from <0.10 to 1.75 cm2V -1s-1.
----- Break -----

10:40 - 11:40

Snow Hall A

FLX2: Flexible Electronic Papers
Chair:
Co-Chair:
FLX2 - 1:
10:40

G. F. Zhou, Philips Res., the Netherlands
Y. Masuda, Bridgestone, Japan
Invited 10-in. Flexible Active-Matrix QR-LPD for Fast
Image Refreshing with Printed OTFTs
H. Maeda, H. Honda, M. Matsuoka, M. Nagae, T. Suzuki,
K. Ogawa, H. Kobayashi
Dai Nippon Printing, JapanA 10 inch, 80 dpi and 4 inch, 150 dpi Active Matrix Organic-TFT
backplanes were fabricated on flexible substrate with solution process.
Driving with this backplane, Exceeds 10:1 of high contrast image wasdisplayed in QR-LPD. The displayed image was refreshed with 300
micro seconds of gate pulse width, successfully.
FLX2 - 2
11:05

Integration of Carbon Nanotube Based Common
Electrode in Active-Matrix Electrophoretic Flexible
Display
N. Saran, N.-S. Roh, S. Kim, W. Lee, J. S. Kim,
T. Hwang, W. Hong, J. Kim, S. J. Baek, M.-S. Park,
M. Kim, S. Lim, D. Hecht, Y.-B. Park*, L. Hu*, C. Ladous*,
T. Huang*, G. Irvin*, P. Drzaic*
Samsung Elect., Korea*
Unidym, USA

We have successfully realized B/W 2.3-inch QVGA a-Si based ActiveMatrix Electrophoretic Display using highly transparent, conductive andflexible carbon nanotube film instead of sputtered IZO. The CNT film
was coated by roll-to-roll coating technique. In this way, we have shown
the possibility of CNT in the reflective-based flexible display
architecture.

203

Thursday
FLX2 - 3L
11:25

December 4
A 160 ppi All-printed Organic TFT Backplane for
Flexible Electrophoretic Displays
K. Suzuki, K. Yutani, A. Onodera, T. Tano, H. Tomono,
A. Murakami, M. Yanagisawa, K. Kameyama,
I. Kawashima
Ricoh, Japan

We have demonstrated a 160 ppi all-printed OTFT backplane for flexible
EPDs. To achieve such a high-resolution backplane, we have developed
a surface energy controlled ink-jet printing with UV irradiation on novel
polyimide for Ag electrode on plastic substrate. A short channel length
below 5 µm was successfully fabricated.
----- Lunch -----

13:20 - 14:20

Snow Hall A

FLX3: Materials and Components for Flexible Displays
Chair:
Co-Chair:Y. Iimura, Tokyo Univ. of A&T, Japan
T. Unate, Sekisui Chem., Japan

FLX3 - 1
13:20

Internal Stress in Transparent Conductive Ga-Doped
ZnO Films on Polymer Substrates
A. Miyake, T. Yamada, H. Makino, N. Yamamoto,T. Yamamoto
Kochi Univ. of Tech., Japan

Transparent conductive Ga-doped ZnO (GZO) films have been
prepared on polymers substrates at various substrate temperatures
below 100°C by ion-plating. The internal stress of the GZO films
increases with increasing Ts. This finding indicates that the thermal
stress contributes mainly to the internal stress at higher substratetemperature.
FLX3 - 2
13:40

Nano-Silver Pastes for Conducting Film
R.-H. Jin*,**, S. Lee*, K. Matsuki*, A. Takahashi*,
K. Matsuda**DIC, Japan**

Kawamura Inst. of Chem. Res., Japan

Silver nanoparticles, which were composed of more than 95wt % silver
and a few quantity of polymeric capping agent, were synthesized andused for silver thin film formation on the glass and plastic substrates. It
was reveled that the film showed high electronic conductivity afterthermal curing within 120~180°C.

204

Thursday
FLX3 - 3
14:00

December 4
A Novel High-Tg Polycarbonate Substrate for InkjetPrinted Organic Thin-Film Transistors
Y. Ikeda, H. Itoh, T. Shiro, A. C. Arias*, T. N. Ng*,
B. Krusor*, R. A. Street*
TEIJIN, Japan*
Palo Alto Res. Ctr., USA

We have developed a novel substrate SS120 for O-TFTs. SS120 has
high Tg (215 °C), good dimensional stability, and a barrier layer against
moisture. We fabricated O-TFTs on SS120 by a jet-printing process.
The mobility and a current on/off ratio of O-TFT on SS120 were 0.010.03 cm2/Vs and 105.
----- Break -----

15:00 - 16:25

Snow Hall A

FLX4: Flexible LCD Technology
Chair:
Co-Chair:FLX4 - 1:
15:00

D. Kang, Soongsil Univ., Korea
T. Takahashi, Kogakuin Univ., Japan
Invited Dual-Mode Operating LCDs for MultiFunctional Mobile Applications
J. C. Kim, S. R. Lee, C. P. Chen, C. G. Jhun*, S. H. Lee**,T.-H. Yoon
Pusan Nat. Univ., Korea*Hoseo Univ., Korea**

3M Korea, Korea

Two configurations of dual-mode operating liquid crystal displays(LCDs) are introduced. Dual-mode operation of LCDs allows the display
application to work as both dynamic and memory modes. The former
and latter modes are responsible for gray-scale generation with fast LC
response and permanent memory time for power-saving, respectively.
FLX4 - 2
15:25

Flexible Field-Effect Transistors Fabricated on
Polymer Films Using LC Semiconductors with
Solution Process
M. Funahashi, F. Zhang, N. Tamaoki*
Univ. of Tokyo, Japan*AIST, Japan

Thin-film transistors based on Liquid crystalline oligothiophene
derivatives were fabricated. The field-effect mobility of the hole reached
0.04 cm2/Vs with the on/off ratio of 107. Furthermore flexible thin-film
transistors could be fabricated on polymer thin films. They maintained
the performance when the strain reached 3%.

205Thursday
FLX4 - 3
15:45

December 4
Ultra-Thin Reflective LC Film
C. W. Kuo, K. H. Liu, C. K. Ku, C. Y. Chang, M. J. Lee,
C. C. Liao
ITRI, Taiwan

An ultra-thin reflective flexible liquid crystal (LC) film has been
demonstrated. The 30% thickness of the display can be reduced byapplying a quarter-wave-plate (QWP) film as upper substrate. A low
temperature alignment material and special designed photo spacers
were applied in this new display.
FLX4 - 4
16:05

Optimization of Photo-Alignment Layer Suitable for
Plastic Substrates
Y. Kuwana, H. Hasebe, I. Nishiyama, K. Takeuchi,
H. Takatsu, V. Chigrinov*, H. S. Kwok*
DIC, Japan*Hong Kong Univ. of S&T, Hong Kong

Application of the alignment layer to a plastic substrate is importantfrom the practical point of view. However, properties of photo-alignment
layer are different between plastic substrates and glass substrates.
Thus, we have investigated and optimized materials and manufacturing
processes to improve uniformity, thermal stability and adhesion.
----- Break -----

16:40 - 17:50

Snow Hall A

FLX5: Flexible Active-Matrix Displays
Chair:
Co-Chair:
FLX5 - 1:
16:40

T. Noguchi, Univ. of the Ryukyus, Japan
K. Nomoto, Sony, Japan
Invited Low-Voltage Operating CMOS Circuits withHigh Field-Effect Mobility Organic Transistors
M. Kitamura, J.-H. Na, Y. Arakawa
Univ. of Tokyo, Japan

Low-voltage operating organic CMOS circuits are reviewed in the
manuscript. The CMOS circuits consist of p-channel pentacene and nchannel C60 thin-film transistors, which have mobilities of 0.2 to 1.1
cm2/Vs and operate at 1 to 7 V. CMOS inverters, NAND and ringoscillators were demonstrated.

206

Thursday
FLX5 - 2:
17:05

December 4
Invited Fabrication of Flexible Field-Sequential-Color
FLCD Panels Driven by LTPS TFTs
K. Motai, Y. Naitou, M. Kadowaki, Y. Iwamoto,K. Ichimura, H. Sato*, Y. Fujisaki*, T. Yamamoto*,
H. Fujikake*, T. Kurita*
Dai Nippon Printing, Japan*NHK, Japan

A novel flexible ferroelectric liquid crystal display (FLCD) panel driven
by poly-Si TFTs has been developed. A 5.1-inch diagonal active matrix
panel with 128x72 pixels was fabricated using polymer stabilized FLC
and poly-Si TFTs formed directly onto plastic substrate. Color moving
images were demonstrated on the fieldsequential-color display panel.
FLX5 - 3
17:30

5.8-in. Phosphorescent Color AM-OLED Display
Driven by OTFTs on Plastic Substrate
M. Suzuki, H. Fukagawa, Y. Nakajima, T. Tsuzuki,
T. Takei, T. Yamamoto, S. Tokito
NHK, Japan

We have demonstrated a phosphorescent color OLED display driven by
OTFTs on a plastic substrate. A pentacene layer was patterned byphotolithography using a double protection layer. Phosphorescentpolymer materials were used for emitting layer, which were patterned by
ink-jet printing. Color moving images were successfully shown on thedisplay.

Author Interviews
18:00 – 19:00

Organizers
Workshop on LC Science and Technologies
Workshop on Active Matrix Displays
Workshop on FPD Manufacturing, Materials and Components
Workshop on Organic LED Displays
Workshop on Electronic Paper

Eurodisplay 2009 (IDRC 2009)
September 14–17, 2009
Rome, Italy
207

IDW ’08 COMMITTEESORGANIZING COMMITTEE
General Chair:
Standing (ITE):
Standing (SID):
Committee (ITE):
Committee (Executive Chair):Committee (Program Chair):Y. Shimodaira
I. Kumazawa
N. Ibaraki
T. Kurita
K. Betsui
A. Mikami

Shizuoka Univ.
Tokyo Inst. of Tech.
Toshiba Matsushita Display Tech.
NHK
HitachiKanazawa Inst. of Tech.

OVERSEAS ADVISORS
P. J. Bos
J. Burroughes
N. Fruehauf
M.-K. Han
I. Heynderickx
J. Jang
H.-S. Kwok
T. LoweE. Lueder
F.-C. LuoM. H. Oh
J.-N. Perbet
I. SageK. R. Sarma
H.-P. D. Shieh
D. TheisL. F. Weber

Kent State Univ., USA
Cambridge Display Tech., UK
Univ. of Stuttgart, Germany
Seoul Nat. Univ., Korea
Philips Res., the Netherlands
Kyung Hee Univ., Korea
Hong Kong Univ. of S&T, Hong Kong
Lambent Consultancy, UK
Univ. of Stuttgart, Germany
AU Optronics, Taiwan
Dankook Univ., Korea
Thales Avionics, France
QinetiQ, UK
Honeywell International, USA
Nat. Chiao Tung Univ., Taiwan
Siemens, Germany
Consultant, USA

EXECUTIVE COMMITTEE
Executive Chair:
Executive Vice-Chair:

K. Betsui
H. MoriT. Shiga
Y. Yamamoto
Program Chair:
A. Mikami
Program Vice-Chair:
R. Hattori
F. Okumura
S. Uchikoga
Program Secretary:
K. Ishii
S. Komura
H. Sakurai
N. Wakita
Publication Chair:
M. DatePublication Vice-Chair: K. Hara
Publication:
Y. Fukushi
T. Miyashita
K. Takatori
Treasurer:
T. Komaki
Treasurer-Elec.:
M. Kimura
General Secretary:
T. Suzuki
General Secretary-Elec.: T. Katoh
Local Arrangement Chair: K. Kato
Local Arrangement Vice-Chair: M. Kimura
K. Shinbo
Local Arrangement:
A. Baba
Y. Kobayashi
M. Minagawa
K. Toda208

Hitachi
FUJIFILM
Univ. of Electro-Commun.
Sharp
Kanazawa Inst. of Tech.
Kyushu Univ.
NEC
ToshibaNHK
Hitachi Displays
Asahi Glass
PanasonicNTT
Shizuoka Univ.
Corning Holding Japan
Tohoku Univ.
NEC LCD Techs.
Panasonic
JSR
ZEON
ZEON
Niigata Univ.
Nagaoka Univ. of Tech.
Niigata Univ.
Niigata Univ.
NICO
Nippon Seiki
Niigata Univ.

Exhibition Chair:
Exhibition Vice-Chair:

H. Saito
T. Nagatsuka

Nagaoka Univ. of Tech.
Nitto Denko

FINANCIAL SUPPORTING COMMITTEE
Chair:
Vice-Chair:
Senior Member:Y. ShimodairaK. Betsui
Y. Nagae
K. Nunomura
H. SekiT. Sugawara

Shizuoka Univ.
Hitachi
Hitachi Displays
Hachinohe Inst. of Tech.

EXECUTIVE COMMITTEE
Members:

H. Arai
K. Dantani
Y. Hashimoto
Y. HiraiT. Hisamune
H. HoriS. Hotta
H. Inoue
M. Inoue
M. Inoue
M. Inoue
Y. Ishii
S. ItohT. Itoh
H. Kanayama
S. Kaneko
M. KanoH. Kawakami
K. Kobayashi
H. Kobayashi
S. Kobayashi
M. Koden
Y. Komiya
H. Kuma
M. Maeda
K. Matsuhiro
S. Matsuyama
S. Mikoshiba
H. Mimura
H. Murakami
S. Naemura
K. Nakazawa
Y. Nishimura
H. Ohnishi
T. Ohnishi
S. Okabayashi
T. Saito
S. Sakamoto
A. Sasaki
T. Shinoda
S. Shiwa
K. Sueoka
T. Sugiura
M. Sumitomo
K. Suzuki
M. Suzuki
T. Taguchi
K. Takeuchi

FPD NetATMI Japan
Hitachi Plasma Display
Optrex
Kasei Optonix
Panasonic
Hitachi High-Tech.
Mitsubishi Elec.
Toyo
TPO Displays Japan
Sharp
FutabaCorning Holding Japan
Sanyo Elec.
NECAlps Elec.
ALTEDEC
Mitsubishi Elec.
Tokyo Univ. of Sci. Yamaguchi
Sharp
Olympus
Idemitsu Kosan
Maeda Consulting
Arisawa Manufacturing
Hitachi Displays
APDC
Shizuoka Univ.
Dai Nippon Printing
Merck
NTT
AKT
Ehime Univ.
Sumitomo Chem.
Meijyo Univ.
Tokyo Cathode Lab.
Noritake Kizai
Kyoto Univ.
Shinoda Plasma/Hiroshima Univ.
Tokyo Denki Univ.
Hokkaido Univ.
IDM
NichiaSED
Merck
Toppan Printing
DIC
209

Y. Takiguchi
S. Tanamachi
C. Tani
Y. Toko
Y. Tsuchiya
M. Tsumura
T. Uchida
M. Uchidoi
H. Uchiike
K. Uchikawa
S. Uemura
T. Ushiki
S. Yamamoto
Y. Yanagi
H. Yokoyama
M. Yokozawa
M. YukiRicohSony
Office T Vision
Stanley Elec.
NHK
HitachiTohoku Univ.
Panasonic

H. Fuijkake
M. KimuraY. Ukai
K. Nunomura
Y. Nakanishi
M. TakaiT. Inoue
I. Yuyama
H. IsonoZ. Tajima
M. Omodani
M. Nakamoto
H. Okumura

NHK
Ryukoku Univ.
UDDI

Tokyo Ohka Kogyo
NORITAKE
Seiko Epson
Seiko Instrs.
Mitsubishi Heavy Ind.
Nat. Inst. of Advanced Ind. S&T
Tokyo Univ. of Info. Sci.
Asahi Glass

Workshop Chair:
LCT
AMD
FMC
PDP
PH
FED
OLED
3D
VHF
LAD
EP
MEMS
DES

Shizuoka Univ.
Osaka Univ.
TDK
Utsunomiya Univ.
Nippon Inst. of Tech.
Mobara Atecs
Tokai Univ.
Shizuoka Univ.
Toshiba

PROGRAM COMMITTEE
Program Chair:
Program Vice-Chair:
Program Secretary:

Committee:
LCT
AMD
FMC
PDP
PH
FED
OLED
3D
VHF
LAD
EP
MEMS
DES

210

A. Mikami
R. Hattori
F. Okumura
S. Uchikoga
K. Ishii
S. Komura
H. Sakurai
N. Wakita

Kanazawa Inst. of Tech.
Kyushu Univ.
NEC
ToshibaNHK
Hitachi Displays
Asahi Glass
Panasonic

T. NoseK. Takatori
M. Shinohara
H. Kajiyama
N. Miura
H. Mimura
Y. Kijima
M. Hashimoto
N. Hiruma
T. Hayashi
T. Fujisawa
Y. NakaiK. Sekiya

Akita Prefectural Univ.
NEC LCD Techs.
Omron
Hiroshima Univ.
Meiji Univ.
Shizuoka Univ.
Sony
NTT DATANHK
3M, Asia Pacific
DIC
Toshiba
Tohoku Univ.

Workshop on LC Science and Technologies
Workshop Chair:
Program Chair:
Program Vice-Chair:
General Secretary:
Program Committee:

H. Fuijkake
T. NoseS. Komura
M. Suzuki
M. Kimura
H. Amakawa
A. Fujita
M. Funahashi
M. Inoue
T. Ishinabe
M. Kimura
A. Kubono
K. Miyachi
I. Nishiyama
H. Okada
O. Okumura
M. OzakiT. Takahashi
H. Wakemoto

NHK
Akita Prefectural Univ.
Hitachi Displays
Merck
JSR
Citizen Tech. Ctr.
Chisso Petrochem.
Univ. of Tokyo
Toyo
Tohoku Univ.
Nagaoka Univ. of Tech.
Shizuoka Univ.
Sharp
DIC
Univ. of Toyama
Seiko Epson
Osaka Univ.
Kougakuin Univ.
Toshiba Matsushita Display Tech.

Workshop on Active Matrix Displays
Workshop Chair:
Program Chair:
Program Vice-Chair:
General Secretary:
Program Committee:

M. Kimura
K. Takatori
Y. Fujisaki
K. Azuma
H. Hamada
M. Hiramatsu
S. Hirota
S. Horita
M. Inoue
H. Kumomi
N. Matsuo
T. Noguchi
K. Nomoto
S. Uchikoga
S. Utsunomiya
Y. Yamamoto

Ryukoku Univ.
NEC LCD Techs.
NHK
TRADIM
Sanyo Elec.
Toshiba Matsushita Display Tech.
Hitachi Maxell
JAIST
TPO Displays Japan
Canon
Hyogo Univ.
Univ. of the Ryukyus
SonyToshiba
Seiko Epson
Sharp

Workshop on FPD Manufacturing, Materials and Components
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

Y. Ukai
M. Shinohara
R. Yamaguchi
D. AokiS. Asari
K. Dantani
K. Fujishiro
T. Hayashi
Y. Iimura
T. Itoh
K. Käläntär
T. Katoh
M. Kimura
M. Miyatake
N. Miyatake
K. Miyazawa
K. Niwa
Y. Saitoh
H. Sakurai
M. Shida

UDDI
Omron
Akita Univ.
Dai Nippon Printing
ULVAC
ATMI Japan
Nippon Steel Chem.
3M, Asia PacificTokyo Univ. of A&T
Corning
Nippon Leiz
ZEON
JSR
Nitto Denko
Mitsui Eng. &Shipbuilding
Chisso Petrochem.
JSR Micro Korea
FUJIFILM
Asahi Glass
Tokyo Ohka Kogyo
211

K. Shimamura
F. Shimo
T. Takeda
H. Teraoka
T. Tomono
T. Unate
Y. Yang
J. S. Yu

Mitsui Eng. &Shipbuilding
Tokyo Electron
Nagase ChemteX
DNS
ToppanSekisui Chem.
Sony
LG Chem.

Workshop on Plasma Displays
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

K. Nunomura
H. Kajiyama
Y. Hashimoto
S. Mikoshiba
R. Murai
Y. Murakami
Y. Nakao
H. Oaku
N. Oota
S. Sakamoto
T. Shiga
T. Shinoda
M. Uchidoi

Hiroshima Univ.
Hitachi Plasma
APDC
PanasonicNHK
Asahi Glass
HitachiDAP Tech.
Noritake Kizai
Univ. of Electro-Commun.
Shinoda Plasma/Hiroshima Univ.
Panasonic

Workshop on EL Displays and Phosphors
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

Y. Nakanishi
N. Miura
N. Matsuda
T. Hisamune
S. ItohD. Y. Jeon
M. Katayama
H. Kobayashi
T. Minami
M. Niboshi
K. OhmiS. Okamoto
D. Poelman
M. Shiiki
M. Sumitomo
K. Wani
R.-J. Xie
H. Yamamoto

Shizuoka Univ.
Meiji Univ.
Toshiba
Kasei Optonix
FutabaKAIST
Denso
Tottori Univ.
Kanazawa Inst. of Tech.
Sharp
Tottori Univ.
NHK
Ghent Univ.
HitachiNichiaiFire Tech.
NIMS
Tokyo Univ. of Tech.

Workshop on Field Emission Display and CRT
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

212

M. Takai
H. Mimura
M. Namba
T. Asano
Y. Gotoh
Y. Iguchi
J. Ishikawa
T. Kusunoki
M. Nakamoto
S. Okuda
T. Saito
S. Uemura

Osaka Univ.
Shizuoka Univ.
NHK
Kyusyu Univ.
Kyoto Univ.
FE Technol.
Kyoto Univ.
HitachiShizuoka Univ.
Sonac
Tokyo Cathode Lab.
NORITAKE

Workshop on Organic LED Displays
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

T. Inoue
Y. Kijima
S. Naka
C. Adachi
R. Hattori
J. KidoH. Kobayashi
H. Kuma
A. Mikami
T. Miyadera
H. Miyazaki
H. Murata
K. Nakayama
Y. SatoS. Tokito
T. Wakimoto

TDK
Sony
Univ. of Toyama
Kyushu Univ.
Kyushu Univ.
Yamagata Univ.
Seiko Epson
Idemitsu Kosan
Kanazawa Inst. of Tech.
Pioneer
Nippon Steel Chem.
JAIST
Yamagata Univ.
Japan Sci. & Tech.
NHK
Merck

Workshop on 3D/Hyper-Realistic Displays and Systems
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

I. Yuyama
M. Hashimoto
S. YanoT. Fujii
Y. Komiya
K. Mashitani
T. Mishina
S. Ohtsuka
J.-Y. Son
H. Takemura
C.-H. Tsai
H.Yamamoto
T. Yoshida

Utsunomiya Univ.
NTT DATANICT
Nagoya Univ.
Olympus
Sanyo Elec.
NICT
Kagoshima Univ.
Daegu Univ.
Osaka Univ.
ITRI
Univ. of Tokushima
Toppan Printing

Workshop on Applied Vision and Human Factors
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

H. Isono
N. Hiruma
T. Matsumoto
J. Bergquist
S. Clippingdale
M. Idesawa
S. Kubota
T. Kurita
K. Masaoka
T. Mitsuhashi
Y. Shimodaira
J. Someya
T. Tamura
T. WakeT. Yamamoto
R. Yoshitake

Nippon Inst. of Tech.
NHK
Univ. of Tokyo
Nokia JapanNHK
Univ. of Electro-Comm.
Seikei Univ.
NHK
NHK
Shobi Univ.
Shizuoka Univ.
Mitsubishi Elec.
Tokyo Polytech. Univ
Chukyo Univ.
Hitachi
IBM Japan

Workshop on Projection and Large-Area Displays,
and Their Components
Workshop Chair:
Program Chair:
Program Vice-Chair:
General Secretary:
Program Committee:

Z. Tajima
T. Hayashi
H. Kikuchi
S. Shikama
M. Takaso
Y. Asakura
Y. Hayashi

Mobara Atecs
3M, Asia Pacific
NICT
Mitsubishi Elec.
Techno Syss. Res.
Nittoh Kogaku
Sony
213

H. Kanayama
H. Koike
Y. Masumoto
H. NakanoT. Ogura
K. Ohara
S. OuchiT. Suzuki
K. Takeda
T. Yoshida

Sanyo Elec.
Seiko Epson
Panasonic
Barco
Panasonic
Texas Inst. Japan
Hitachi
Victor Company of Japan
Seiko Epson
Toppan Printing

Workshop on Electoronic Paper
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

M. Omodani
T. Fujisawa
H. Arisawa
Y. Hotta
K. Kitamura
S. Maeda
Y. Masuda
N.-S. Roh
A. Suzuki
Y. TokoG. F. Zhou

Tokai Univ.
DIC
Fuji Xerox
Ricoh
Chiba Univ.
Oji Paper
BridgestoneSamsung Elect.
Ricoh
Stanley Elec.
Philips Res.

Workshop on MEMS for Future Displays
and Related Electron Devices
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

M. Nakamoto
Y. NakaiT. Komoda
T. Akinwande
G. Barbastathis
M. Esashi
H. Fujita
J. Jang
H. Kikuchi
J. M. Kim
K. Matsumoto
W. I. Milne
T. Ooasa
S. Sugiyama
H. L. Tuller
S. Uchikoga
J.-B. Yoon
Y. Yoshida

Shizuoka Univ.
Toshiba
Panasonic Elec. Works.
MIT
MIT
Tohoku Univ.
Univ. of Tokyo
Kyung Hee Univ.
NICT
Samsung
Olympus
Cambridge Univ.
Tokyo Electron
Ritsumeikan Univ.
MIT
Toshiba
KAIST
Mitsubishi Elec.

Workshop on Display Electronic Systems
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

214

H. Okumura
ToshibaK. Sekiya
Tohoku Univ.
Y. KudoHitachi
K. Käläntär
Nippon Leiz
T. KimMarvell Semiconductor
M.A. Klompenhouwer Philips Res.
H.-S. Koo
Ming-Hsing Univ. of S&T
O.-K. Kwon
Hanyang Univ.
A. Nagase
Mitsubishi Elec.
S. OnoPanasonic
H. Sasaki
ToshibaN. Suzuki
Nokia Japan
K. Takeuchi
Univ. of Elecro-Commun.
T. Yamamoto
NHK

N

1F

Poster, Exhibition
and Author Interviews

Exhibition Hall B(Wave Market)

Sado Kisen
Ferry Terminal

to Registration

Cloak

Main Escalator

Entrance Hall

Car Port

Toki Messe(Bus Stop)

Evening
Get Together
(30F)

Hotel
Nikko
Niigata

Niigata
StationFLOOR PLAN

215

216

N

2F

Main Escalator

to 3F, 4F and Entrance

Poster, Exhibition andAuthor Interviews

Snow Hall(Main Hall)(A)(B)

Marine HallBus Stop for
Niigata Station

Registration

Main Escalator

Main Escalator

Room
301

Room
302

Speaker PreparationRoom

307 306 305 304 303

3F

4F(International Conference Room)

Room
201

204 203 202

Secretariat

To Exhibition Hall B

Keynote and Invited
Addresses

IDW ’08 Session Navigator
Location

Keynote& Invited

Snow Hall

Wednesday, Dec. 3
9:30-11:50

AM

18:00-19:00

Marine HallAMD

LC Alignment
Patterning
Fascinating LC
Materials

Characterizationof LC Alignment

Organic TFT

LCDApplications

A.I.

State-of-the-Art
LCD Modes

Novel LCD
Modes

High
Performance
LCDs (1)Poly-Si TFT

System On
Glass

Amorphous
Oxide TFT

Crystalline
Oxide TFT

Materials I

Materials II

High
Performance
LCDs (2)

A.I.

A.I.
Manufacturing I

Manufacturing II Manufacturing III

Posters
Optical Films

Backlight

A.I.

Cell Technology

Driving &Discharge

A.I.

A.I.

A.I.

A.I.

Posters

A.I.

Posters

Phosphors for
LEDs

Rm. 302

Phosphors for
PDPs

Phosphors in EL& General

Posters

Exhibition Hall B

Materials III
A.I.

Protective Layer(1)

Rm. 201
Exhibition Hall B

FED

Progress of LC
Materials*MEMS Displays& ImagingRm. 302PH

17:40-18:40*AM-OLED

Exhibition Hall B

PDP

Moving Picture
Analysis

Posters

Snow Hall B

Rm. 301
Exhibition Hall B

PM

Image Sticking
Measurement

Rm. 201

FMC

AM

Opening, Keynote &Invited Addresses

Exhibition Hall B
Snow Hall A

18:00-19:00

PM

Snow Hall B

LCT

Friday, Dec. 5

Thursday, Dec. 4

PM

Protective Layer(2)

Fabrication
A.I.

*Phosphors for
FEDs
A.I.

Rm. 302

A.I.
FEDs*Phosphors for
FEDs

CNT Emitters for
FEDs

FE Materials &Characteristics

Exhibition Hall B

OLED

Snow Hall B

A.I.
OLED Materials

OLED Device
OLED Device
Technologies (1) Technologies (2)Exhibition Hall B

3D*AM-OLED
VisualPerception &Human Factor

Exhibition Hall B

VHF

Rm. 201

Posters
Solid State Light
Sources

LCOS Light
ValvesIllumination &Projection
OpticsElectrophoretic
Dispalys

Electrowetting
Displays &OthersVarious EP
Technologies

EP

MEMS

Emerging
MEMS
Technologies

Fundamental
Process
Technologies*MEMS Displays& Imaging

A.I.
Novel Electronic
Display &DrivingHigh Dynamic
Range Display
Technologies

Marine Hall
Posters

High Image
Quality Display
Technologies

Color Fidelity
Systems*Contrast
Enhancement

A.I.

A.I.
Display
Technologies forProfessional Use

Marine Hall

Snow Hall A

A.I.
Flexible OLED
Technologies

FlexibleElectronic
PapersMaterials &Components for
Flexible Displays

Flexible LCD
Technology

Flexible ActiveMatrix Displays

Exhibition Hall B

LCT: Workshop on LC Science & Technologies
AMD: Workshop on Active Matrix Displays
FMC: Workshop on FPD Manufacturing, Materials & Components
PDP: Workshop on Plasma Displays
PH: Workshop on EL Displays & Phosphors
FED: Workshop on Field Emission Display & CRT
OLED: Workshop on Organic LED Displays

A.I.

3D: Workshop on 3D/Hyper-Realistic Displays & Systems
VHF: Workshop on Applied Vision & Human Factors
LAD: Workshop on Projection & Large-Area Displays, & Their Components
EP: Workshop on Electronic Paper
MEMS: Workshop on MEMS for Future Displays & Related Electron Devices
DES: Workshop on Display Electronic Systems
DPU: Topical Session on Display Technologies for Professional Use
FLX: Topical Session on Flexible Displays

Color

Vision & Human
Factors

Moving Image
Quality
A.I.

Optical MEMS &DeviceTechnologies

Exhibition Hall B

FLX

A.I.

Posters*Novel MEMS
Projection Optical
Technologies

Snow Hall A

DPU

Image Quality(2)

PostersA.I.

Rm. 201

Exhibition Hall B

Image Quality
(1)
A.I.

Exhibition Hall B

DES

Hyper Realistic& 3D Display
Systems (2)*Novel MEMS
Projection Optical
Technologies
A.I.

Exhibition Hall B

Hyper Realistic& 3D Display
Systems (1)A.I.

*Contrast
Enhancement

Exhibition Hall B
Rm. 302

A.I.
Measurement &Standardization

Posters

Marine Hall
Exhibition Hall B

LAD

PostersA.I.

Rm. 301

A.I.: Author Interviews*: Joint Session

2F Lobby

Tue.,
Dec. 2

IDW ’08 Timetable
Date

Registration
17:00-20:00

Snow Hall A

Snow Hall B

Marine Hall

Room 301

Room 302

Room 201

Exhibition Hall B

Evening Get-Together at Houou Room (30F), Hotel Nikko Niigata
18:00-20:00
Opening, Keynote Address
9:30-11:00

Wednesday, December 3

Break
Invited Address
11:10-11:50
Lunch
Registration
8:00-18:00

AMD1
13:20-14:40

OLED1
13:20-14:40

LCT1
13:20-14:55

AMD2
15:00-16:30

OLED2
14:50-16:00

LCT2
15:00-16:20

DES1
16:35-17:55

OLED3
16:35-17:45

LCT3
16:40-18:00

FMC1
13:20-14:40

EP1
13:20-14:45

LAD1
13:20-14:40

FMC2
15:00-16:00

EP2
15:00-16:05

LAD2
15:00-16:25

FMC3
16:40-17:40

EP3
16:40-17:45

LAD3
16:40-17:45

Break

DESp
13:20-16:20

Exhibition
12:00-18:00

Break

Author Interviews
18:00-19:00

Thursday, December 4

FLX1
9:00-10:00

Registration
8:00-18:00

FLX2
10:40-11:40

AMD3/OLED4
10:40-12:05

FLX3
13:20-14:20

LCT4
13:20-14:25

FLX4
15:00-16:25
FLX5
16:40-17:50

Banquet at Continental Room (4F), Hotel Okura Niigata
19:30-21:30
FMC4
PDP1
MEMS1/LAD4
9:00-10:20
9:00-10:20
9:00-10:25
Break
DES3
PDP2
MEMS2
FMC5
10:40-12:00
10:40-12:15
10:40-12:00
10:40-12:00
Lunch
MEMS3
DPU1
PH1
13:20-14:40
13:20-14:50
13:20-14:40
Break
DES4
3D1
MEMS4/AMD4
PH2
15:00-15:50
15:00-16:20
15:00-16:30
14:55-16:05
Break
3D2
MEMS5
VHF1/DES5
PH3
16:40-18:00
16:40-18:15
16:35-18:00
16:40-17:55
DES2
9:00-10:20

LCT5
16:40-17:40

LCTp, PHp,
3Dp, VHFp
9:00-12:00

AMDp, OLEDp,
LADp, EPp
13:20-16:20

Exhibition
10:00-18:00

Author Interviews
18:00-19:00
AMD5
9:00-10:20

LCT6
9:00-10:30

VHF2
9:00-10:30

3D3
9:00-10:15

FED1
9:00-10:10

3D4
10:40-11:45

FED2/PH4
10:40-12:20

FMC6
13:20-14:40

FED3
13:20-15:00

PDP3
13:20-14:40

FMC7
15:00-16:20

FED4
15:10-16:50

PDP4
15:00-16:15

FMCp, PDPp
9:00-12:00

Friday, December 5

BreakRegistration
8:00-15:00

AMD6
10:40-12:05

LCT7
10:40-12:40

VHF3
10:40-11:50

AMD7
13:20-14:40

LCT8
13:40-14:45

VHF4
13:20-14:40

Exhibition
10:00-14:00

Lunch

Break
AMD8
15:00-16:15

LCT9
15:00-16:25

VHF5
15:00-16:20

LCT10
16:40-17:40

VHF6
16:40-17:40

Break
FMC8
16:40-17:55

PDP5
16:40-17:40
Author Interviews
17:40-18:40

IDW ’08
FINAL PROGRAM

IDW ’08 Secretariat:
c/o Bilingual Group Ltd.
3-3-6 Kudan Minami, Chiyoda-ku
Tokyo 102-0074, Japan