IDW ’14

THE 21ST INTERNATIONALDISPLAY WORKSHOPS
Special Topics of Interest on• Oxide-Semiconductor TFT• Augmented Reality and Virtual Reality• Lighting Technologies• Printed Electronics

http://www.idw.or.jp/• LC Science and Technologies (LCT)• Active Matrix Displays (AMD)• FPD Manufacturing, Materials
and Components (FMC)• EL Displays and Phosphors (PH)• Field Emission Displays, CRTs
and Plasma Displays (FED)• OLED Displays and Related Technologies (OLED)• 3D/Hyper-Realistic Displays and Systems (3D)
• Applied Vision and Human Factors (VHF)• Projection and Large-Area Displays
and Their Components (PRJ)• Electronic Paper (EP)• MEMS and Emerging Technologies
for Future Displays and Devices (MEET)• Display Electronic Systems (DES)• Flexible Electronics (FLX)• Touch Panels and Input Technologies (INP)

IDW ’14
FINAL PROGRAM

IDW ’14 Secretariat:
c/o Bilingual Group Ltd.
3-3-6 Kudan Minami, Chiyoda-ku,
Tokyo 102-0074, Japan
Phone：+81-3-3263-1345
FAX：+81-3-3263-1264
E-mail：idw@idw.or.jp

Workshops on

Final Program
TOKI MESSE Niigata Convention Center
Niigata, Japan
December 3 – 5, 2014

CONTENTS
Program Highlights................................................................................. 7
General Information.............................................................................. 12
Travel Information................................................................................. 15
Plenary Sessions
Wednesday, December 3
IDW ’14 Opening.................................................................................. 20
IDW ’14 Keynote Addresses................................................................. 20
IDW ’14 Invited Addresses................................................................... 21
Special Topics of Interest on Oxide-Semiconductor TFT
Wednesday, December 3
AMDp1 Poster : Oxide TFT................................................................... 22
Thursday, December 4
AMD1 High Resolution Displays Using LTPS and Oxide TFTs.......... 26
FMCp4 Poster : Oxide TFT/Printed Electronics.................................... 27
AMD2 Physics of Oxide Semiconductors........................................... 29
AMD3 Stability of Oxide TFT.............................................................. 30
AMD4 Higher Performance Oxide TFT............................................... 31
Friday, December 5
AMD6 Chemistry of Oxide Semiconductors & TFT............................ 33
AMD7 Back-Channel Etched Oxide TFT............................................ 34
Special Topics of Interest on Augmented Reality and Virtual Reality
Thursday, December 4
DES1 Display Technologies in Augmented Reality............................ 36
PRJ4 Wearable Display..................................................................... 37
INP3 AR Interactive Systems........................................................... 38
3D2Interactive 3D Display Technology........................................... 39
3D3
Omnidirectional Hyper-Realistic System................................. 40
Friday, December 5
FMC4 Augmented Reality and Virtual Reality.................................... 41
DES3/VHF5 System Design and Evaluation in Augmented Reality..... 42
Special Topics of Interest on Lighting Technologies
Thursday, December 4
FMCp3 Poster : Lighting Technologies.................................................. 44
PHp2 Poster : Phosphors for Lighting Application.............................. 45
OLEDp1 Poster : OLED Poster ............................................................ 46
1

Friday, December 5
PH3
Phosphors for Lighting Application.......................................... 47
FMC5 Lighting Technologies.............................................................. 49
Special Topics of Interest on Printed Electronics
Thursday, December 4
OLED3 OLED Process Technologies................................................... 50
OLED4 OLED Materials (1).................................................................. 51
FLX3 Advanced Printing Technologies.............................................. 52
OLEDp2 Poster : OLED Poster............................................................. 54
FLX4 Printed TFT Technologies........................................................ 54
AMD5 Printed Electronics................................................................... 55
Workshop on LC Science and Technologies
Wednesday, December 3
LCT1 Fast Switching LCD................................................................. 57
LCT2 Novel Optics for LCD............................................................... 58
Thursday, December 4
LCT3 Photo Alignment ..................................................................... 59
LCT4 LC Materials............................................................................. 60
LCT5 LC Evaluation.......................................................................... 62
Friday, December 5
LCTp1 Poster : Fast Switching LCD..................................................... 63
LCTp2 Poster : LC Application............................................................. 64
LCTp3 Poster : Photo Alignment.......................................................... 68
LCTp4 Poster : LC Materials................................................................ 69
LCTp5 Poster : LC Evaluation.............................................................. 70
Workshop on Active Matrix Displays
Wednesday, December 3
AMDp1 Poster : Oxide TFT................................................................... 72
AMDp2 Poster : Active-Matrix Devices.................................................. 76
Thursday, December 4
AMD1 High Resolution Displays Using LTPS and Oxide TFTs.......... 81
AMD2 Physics of Oxide Semiconductors........................................... 82
AMD3 Stability of Oxide TFT.............................................................. 83
AMD4 Higher Performance Oxide TFT............................................... 84
AMD5 Printed Electronics................................................................... 85
Friday, December 5
AMD6 Chemistry of Oxide Semiconductors and TFT......................... 87
AMD7 Back-Channel Etched Oxide TFT............................................ 88
2

AMD8 Advanced Si Technology.......................................................... 90
Workshop on FPD Manufacturing, Materials and Components
Wednesday, December 3
FMC1 Manufacturing Technologies.................................................... 91
FMC2 Materials and Components...................................................... 92
Thursday, December 4
FMCp1 Poster : Manufacturing Technologies........................................ 93
FMCp2 Poster : Materials and Components......................................... 95
FMCp3 Poster : Lighting Technologies.................................................. 99
FMCp4 Poster : Oxide TFT/Printed Electronics.................................. 100
FMC3 Optical Films.......................................................................... 102
Friday, December 5
FMC4 Augmented Reality and Virtual Reality.................................. 103
FMC5 Lighting Technologies............................................................ 104
FLX6/FMC6 Flexible Materials and Devices....................................... 105
Workshop on EL Displays and Phosphors
Thursday, December 4
PHp1 Poster : Phosphors................................................................. 107
PHp2 Poster : Phosphors for Lighting Application............................ 109
PH1
Phosphor for General............................................................. 110
PH2
Phosphor Applications........................................................... 111
Friday, December 5
PH3
Phosphors for Lighting Application........................................ 112
Workshop on Field Emission Displays, CRTs and Plasma Displays
Friday, December 5
Opening.............................................................................................. 114
FED1 Novel Devices and Applications............................................. 114
FED2 Fabrication Processes and New Materials............................. 115
FED3 FE Mechanisms and PDP Protective Layers......................... 116
FED4 Summing Up of PDP History................................................. 118
Workshop on OLED Displays and Related Technologies
Wednesday, December 3
OLED1 Advanced OLED Technologies (1)..................................... 120
OLED2 Advanced OLED Technologies (2)..................................... 121
Thursday, December 4
OLED3 OLED Process Technologies............................................. 123
OLED4 OLED Materials (1)............................................................ 124
3

OLEDp1 Poster : OLED Poster......................................................... 125
OLEDp2 Poster : OLED Poster......................................................... 127
OLEDp3 Poster : OLED Poster......................................................... 128
Friday, December 5
OLED5 OLED Materials (2)............................................................ 134
Workshop on 3D/Hyper-Realistic Displays and Systems
Thursday, December 4
3Dp1 Poster : 3D/Hyper-Realistic Displays...................................... 136
3D1
Holography............................................................................. 142
3D2Interactive 3D Display Technology......................................... 143
3D3
Omnidirectional Hyper-Realistic System............................... 144
Friday, December 5
3D4
3D/Hyper-Realistic Displays (1)............................................. 145
3D5
3D/Hyper-Realistic Displays (2)............................................. 146
3D6
Optical Devices for 3D System.............................................. 147
3D7/VHF7 Visual Perception for 3D System...................................... 148
Workshop on Applied Vision and Human Factors
Thursday, December 4
VHF1 Optical Measurements........................................................... 150
VHF2 Color and OLEDs................................................................... 151
VHFp1 Poster : Applied Vision & Human Factors............................... 152
VHF3 Moving Image Quality............................................................ 156
Friday, December 5
VHF4 Display Legibility.................................................................... 157
DES3/VHF5 System Design and Evaluation in Augmented Reality... 158
VHF6 Mobile Human Factors and ’Kansei’ Evaluation..................... 159
3D7/VHF7 Visual Perception for 3D System...................................... 161
Workshop on Projection and Large-Area Displays and Their Components
Wednesday, December 3
Opening.............................................................................................. 162
PRJ1 Solid-State Light Source Technologies for Projector.............. 162
PRJ2 Vehicle Display....................................................................... 163
Thursday, December 4
PRJ3 Projection Technologies......................................................... 164
PRJ4 Wearable Display................................................................... 165
PRJ5 Projection Applications.......................................................... 166
PRJp Short Presentation: Projection............................................... 167

4

Friday, December 5
PRJp1 Poster : Projection.................................................................. 167
PRJ6 Wearable Display and Application......................................... 168
Workshop on Electronic Paper
Wednesday, December 3
EP1
Electrophoretic Displays........................................................ 170
EP2
Various Technologies for e-Paper.......................................... 171
Thursday, December 4EP3Chromic Displays................................................................... 172
EPp
Short Presentation: Electronic Paper..................................... 173
EPp1 Poster : Electronic Paper........................................................ 173
Workshop on MEMS and Emerging Technologies for Future Displays and Devices
Thursday, December 4
Opening.............................................................................................. 177
MEET1 Emerging Quantum Dots and Nanotechnologies................ 177
MEET2 Fundamental Components and Process Technologies........ 178
MEET3 EL Quantum Dots Technologies.......................................... 180
MEET4 Novel Materials and Components........................................ 182
MEET5 Nanotechnology Display and Imaging................................. 183
Workshop on Display Electronic Systems
Thursday, December 4
DES1 Display Technologies in Augmented Reality.......................... 185
DES2 Image Processing.................................................................. 186
DESp1 Poster : Display Electronic Systems....................................... 187
Friday, December 5
DES3/VHF5 System Design and Evaluation in Augmented Reality... 189
DES4 Display Driving Technologies................................................. 191
DES5 Display Interface and Driving Technologies........................... 192
Workshop on Flexible Electronics
Wednesday, December 3
Opening.............................................................................................. 193
FLX1 Flexible Backplane................................................................. 193
FLX2 Flexible Displays and Devices............................................... 194
Thursday, December 4
FLXp1 Poster : Flexible Electronics................................................... 195
FLX3 Advanced Printing Technologies............................................ 199
FLX4 Printed TFT Technologies...................................................... 200
5

Friday, December 5
FLX5 Flexible Substrates ............................................................... 202
FLX6/FMC6 Flexible Materials and Devices....................................... 203
Workshop on Touch Panels and Input Technologies
Wednesday, December 3
Opening.............................................................................................. 205
INP1 Touch Panel (1)...................................................................... 205
INP2 Touch Panel (2) and Haptics.................................................. 206
Thursday, December 4
INPp1 Poster : Touch Panel............................................................... 208
INP3 AR Interactive Systems......................................................... 209
INP4 Sensor and Applications........................................................ 210
Innovative Demonstration Session
Thursday, December 4
Innovative Demonstration Session (1)................................................ 212
Friday, December 5
Innovative Demonstration Session (2)................................................ 214
IDW ’14 Committees........................................................................... 216
Floor Map........................................................................................... 226
IDW ’14 Workshop Timetable.......................................................Pullout
IDW ’14 Special Topics of Interest Navigator................................Pullout
IDW ’14 Session Navigator...........................................................Pullout

6

PROGRAM HIGHLIGHTS
The 21st International Display Workshops will be held as IDW ’14 forencouraging aggressive research and development of display
technologies throughout the world and especially in the Asian region.
IDW ’14 focuses on the following four special topics, which are extremely
timely, as well as fourteen active workshops.
Special Topics of Interest on• Oxide-Semiconductor TFT• Augmented Reality and Virtual Reality• Lighting Technologies• Printed Electronics
Workshops on• LC Science and Technologies• Active Matrix Displays• FPD Manufacturing, Materials and Components• EL Displays and Phosphors• Field Emission Displays, CRTs and Plasma Displays• OLED Displays and Related Technologies• 3D/Hyper-Realistic Displays and Systems• Applied Vision and Human Factors• Projection and Large-Area Displays and Their Components• Electronic Paper• MEMS and Emerging Technologies for Future Displays
and Devices• Display Electronic Systems• Flexible Electronics• Touch Panels and Input Technologies
The three-day conference will feature 489 papers, including 2 keynote
addresses, 2 invited addresses, 103 invited papers and 165 oralpresentations, and 217 poster presentations. Following plenary sessionof Keynote and Invited addresses in the Wednesday morning,presentations will begin and continue in 7 parallel oral sessions throughFriday. Poster sessions and author interviews and demonstrations will
enable participants to discuss topics in detail. IDW ’14 will also present“IDW Best Paper Award” and “IDW Outstanding Poster Paper Award”
based on paper originality and technical significance to information
displays. This year, IDW '14 will provide a live demonstration session
called the Innovative Demonstration Session. The two-day session, on
Thursday and Friday, will feature a total of 31 innovative demonstrationsin the Exhibition Hall B. Best Demonstration Award will be awarded tothe demonstration that has the biggest impact on the audience. Exhibits
by universities and display industry-related businesses will also befeatured from Wednesday to Friday in parallel with workshops. IDW ’14
should be of interest to not only researchers and engineers, but also
managers of companies and institutions in the display community.

Special Topics of Interest on Oxide-Semiconductor TFT (OXT)

Oxide TFTs have a long history going back for almost a half century, butthey have been intensively investigated only since the first demonstrationof amorphous oxide semiconductor TFTs in 2004, and have now become
one of the hottest topics in backplane technologies for active-matrix
FPDs. Although we were glad to see and touch the first commercial LCD
products using the oxide TFTs in 2012 and the subsequent OLED
televisions last year, there still remain many technical issues for further
evolution toward better performance, high resolution, robust reliability,
low fabrication temperature, and broader applications. In IDW ’14, thelatest achievements involved in the brand-new challenges of theseissues will be found. Neither should you miss the brilliant invited talks
7

given by world-leading researchers in oxide TFTs nor the contributed
presentations with outstanding results.

Special Topics of Interest on Augmented Reality and Virtual
Reality (AR&VR)

In recent years, augmented reality (AR) and virtual reality (VR)applications have been making substantial progress with highperformance display devices and sensors including cameras withtracking capabilities and computer graphics technologies. In the 3D-WS
sessions, interactive display technologies using high-speed image
processing and applications using wide-field imaging will be presented.
Presentations in the DES-WS sessions will include AR with a variety ofdisplay techniques such as wide-field head mounted display, fog display,head-up display, projection AR, and Diminished Reality (DR). In the
DES/VHF-WS, effects of AR/VR will be presented with AR vehicles, 3D
display, and monocular AR. In the INP-WS sessions, system design
considerations for personal light field displays and MR visual stimulation
on tactile sensation will be presented. In the PRJ-WS sessions, seethrough glasses and light field display for AR/VR will be presented. In the
FMC-WS sessions, floating image displays to represent 3D images ofobjects, and wide field of view optical combiner for AR head-up displays
will be presented.

Special Topics of Interest on Lighting Technologies (LIT)The Lighting Technologies of STI will cover all aspects of science andtechnologies of lighting including LED lighting, OLED lighting, flexible
lighting, manufacturing of lighting, lighting materials, device structures
for lighting and internal or external efficiency enhancement technologies.
A highlight for IDW ’14 will be the presentations on novel speckle
reduction technology using phase-randomizing deformable mirror
applied to direct view LED-BLU with blue laser stimulation of the quantum
dots (FMC-WS), high efficient backlight with a nanorod-based opticalfilm and EL sheet driven by wireless power (PH-WS), and flexible whitelighting device and tunable lighting device (OLED-WS).

Special Topics of Interest on Printed Electronics (PE)

Printing technologies are opening a new era of electronic devices fortheir high productivity, low cost, large scale and low environmentalburden fabrication advantages. Printed Electronics, a new Special Topics
of Interest, will cover all aspects concerning printed electronics fromscience and technology viewpoints. This year, five oral sessions will beheld including devices and displays fabricated with printing technologies,
materials suitable for printing and fabricating process.

Workshop on LC Science and Technologies (LCT)This workshop covers topics from fundamental studies to recent
developments in LCD technologies and LC materials. Of special note
this year is the six invited presentations related to fast switching
technologies, photo alignment technologies, and LC materials
technologies. Moreover, new LCD technologies, such as polymerstabilized LCDs, 3D-LCDs, IPS-LCDs and ferroelectric LCs are
discussed.

Workshop on Active Matrix Displays (AMD)The AMD workshop covers Si-TFT, oxide TFT, organic TFT, OLED, andintegrated sensors. Recent paper presentations tend to focus on oxide
TFT, which may be expected to play a role in applications for higherdefinition LC and OLED displays. We highlight the oxide TFT as a special
topic of interest (STI) with four devoted sessions covering a wide areafrom materials, physics, devices, and processes to applications. We also
have prepared one session on printed electronics STI.

Workshop on FPD Manufacturing, Materials and Components(FMC)
8

The FMC workshop covers recent developments and achievements inthe field of flat panel display technologies that include panel
manufacturing, materials, measurements and components. The oralpresentations contain more than 15 papers of which 5 papers are invited
papers. In addition, more than 25 posters will be presented. This also
includes joint sessions with the FLX-WS. This year our workshops
include the hot topics of laser processing, bonding and de-bonding
technologies, light control by submicron structure and quantum dot
lighting. The AR/VR session devoted to special topics of interests will
present the recent trends in augmented and virtual reality. In the newly
planned demonstration session, three papers from the oral session will
be presented on December 5.

Workshop on EL Displays and Phosphors (PH)This workshop presents the latest achievements on devices andphosphors for emissive displays, general lighting and LCD backlighting.
Invited talks will cover emerging technologies such as highly efficient
backlight with a nanorod-based optical film, electron-beam excited UVlight source and wavelength conversion nano phosphors synthesized by
the microreaction method. Display and medical applications with novel
phosphors using Cu-complex and EL sheet driven by wireless power will
also be presented.

Workshop on Field Emission Displays, CRTs and Plasma
Displays (FED)

This workshop wholly covers the fields of FED, CRT and PDP
technologies. Recent progress in image sensors and displays with fieldemitter arrays will be discussed. The invited talk will present an opticalnano-imaging system with electron beam excitation for living cells.
Additionally, fabrication processes, field emission characteristics andmechanism, and field emitter materials such as CNT and PrO, will be
discussed. Since the invention of plasma displays in 1964, there has
been much progress. The 50th anniversary talk discusses successes
and declines in the PDP business. Also covered in the session are thelatest PDP technologies and discharge applications for medical use andplant factories.

Workshop on OLED Displays and Related Technologies(OLED)The OLED workshop covers all aspects of the science and technologies
of OLED and other organic devices, ranging from material research,basic device physics to display including backplane technologies andother applications. OLED technologies from micro display to large size
TV applications and OLED lighting will be reported. Material and device
structure for higher quantum efficiencies supporting these device
technologies will also be presented. Soluble OLED materials, printed
devices and process technologies focused on Printed Electronics (PE)as STI are special discussions this year.

Workshop on 3D/Hyper-Realistic Displays and Systems (3D)This workshop focuses on recent progress in 3D, hyper-realistic display
systems and related visual sciences. It covers acquisition, processing,2D/3D conversion, dual-view display, multi-view display, holography, newoptical components, crosstalk, measurement, perception, standardizationand more for 3D/hyper-reality display technologies. This year, somenovel technologies will be presented as invited papers, such as superhigh frame-rate videos, floating display and electronic holography. Sometechnologies for omnidirectional video are also introduced, which
provided the audience a good opportunity to understand the trends inthese fields.

Workshop on Applied Vision and Human Factors (VHF)

The VHF workshop covers all topics on vision, human factors and image
quality relating to information display. The oral and poster sessions
9

include lively discussions on the latest topics ranging from fundamental
theories to applications. This year, we have five VHF oral sessions on
Optical Measurement, Color and OLEDs, Moving Image Quality, Display
Legibility, and Mobile Human Factors and 'Kansei' Evaluation. We also
have a joint session with the DES (Display Electronic Systems) workshop
on the theme of AR (Augmented Reality) and a joint session with the 3D
workshop. Both of these promises groundbreaking interdisciplinary
discussions, in addition to our VHF poster session which enables
participants to quiz presenters in detail. Two distinguished invited talks
will be given in the oral sessions, concerning the latest topics in the FPD
Mura Index under the IEC standard and visual effects of curved
AMOLEDs.

Workshop on Projection and Large-Area Displays and Their
Components (PRJ)The PRJ workshop covers wearable technologies, vehicle information
displays, adaptive headlights, solid-state light sources, projection
mapping, augmented reality, 3D measurement, advanced sensing andall the projection technologies. This time, our sessions will focus on
miniature optical system technologies, laser and LED materials,
projection devices, short throw optics, speckle mitigation, and a laser
driving system. Recent studies of advanced technologies such as virtual
imaging for wearable and vehicle displays, and an innovative theory ofsolid-state lighting devices will be presented. There will be 17 oral andfour poster presentations, for a total 21 presentations, of which 5 papers
are invited presentations.

Workshop on Electronic Paper (EP)This workshop focuses on current topics in electronic paper including
rewritable paper and flexible displays. Newly developed e-Paper
technologies are now eagerly sought for emerging applications such as
e-Books, e-Notebooks, electronic shelf labels, and signage. Various
novel technologies such as electrophoretic, electro/thermo chromic, andtwisting ball displays will be presented. There will also be reports on front
lighting technology and challenging new approaches in e-Paper
technologies. Systems, devices, materials, and applications in this field
are expected to be enthusiastically discussed.

Workshop on MEMS and Emerging Technologies for Future
Displays and Devices (MEET)

The MEET workshop is unique in covering all aspects of MEMS,
nanotechnologies and emerging technologies concerning future
displays, imaging devices, and emerging electron devices. It seeks tobroaden the horizon of display and imaging technologies into cuttingedge technologies. Research areas such as materials, basic physics
and fabrication processes are included. Among all the MEMS and display
conferences in the world, this is the only opportunity for MEMS andcutting-edge technology researchers to gather and discuss such devices.
This year will mark the 10th anniversary of the founding of the MEET
workshop. Authorities from top research institutions around the world inthis field have been invited. Invited speakers are from Univ. of Cambridge,
MIT (QD Vision), École Polytechnique, CEA-LETI, Brunel Univ., Kyung
Hee Univ., Seoul Nat. Univ., Sungkyunkwan Univ., Lumiode,
NanoPhotonica, Ostendo, Pacific Light Technologies, Ritsumeikan Univ.
and Tohoku Univ. Together with contributed papers with high-quality
content, this workshop invites participants who wish to open up new
fields in displays, imaging devices and emerging devices.

Workshop on Display Electronic Systems (DES)This workshop covers all aspects of display electronics and systems in
relation to video data processing, interface technologies, cooperative
operations between display components such as cells and backlights
and sensors. This year, we will have 27 papers including seven invited10

talks and 10 poster presentations (excluding late-news). Sessions
related to the driving/low-power technologies for LCD/OLED and vehicle
display technologies are planned. We will also highlight AR/VR
technology as a STI including a joint session with VHF-WS.

Workshop on Flexible Electronics (FLX)

Recently, there has been much attention on flexible display technologies
which are spread over a wide range of fields from materials science topractical applications. The sessions cover all aspects of the hottest
flexible device / wearable / material technologies including OLED, TFT
fabrication, substrate, printing / roll-to-roll processes and evaluation.

Workshop on Touch Panels and Input Technologies (INP)

Conventional interface technologies such as touch panels and interactive
technologies are the stars of the session. AR/Interactive systems suchas haptics and AR are special topics of INP. Computer vision and naturalinterface technologies are still important research topics of INP. This
year, new topics will be presented: Illusion and its analysis which comesfrom difference of the movement states between real and virtual objects
and a near eye display system using light-field technology. INP papers
will open a new window in displays and interactive technologies.

IDW Best Paper Award and IDW Outstanding Poster Paper
Award

IDW will present “IDW Best Paper Award” and “IDW Outstanding Poster
Paper Award”. The award committee of IDW will select the mostoutstanding papers from those presented at IDW ’14. The award
winners will be announced on the IDW website and given a plaque after
the conference.

Innovative Demonstration Session

This year, IDW introduces new live demonstration for all oral and poster
presenters, which provides a larger space and more time for preparationand demonstration than that of the “Author Interviews and Demonstrations”(Exhibition Hall B).
December 4: 16:45 – 19:30
December 5: 12:30 – 15:15
Best Demonstration Award will be awarded to the demonstration thathas the biggest impact on the audience.

Exhibition

The IDW ’14 Exhibition, which will be held from December 3 throughDecember 5, covers materials, components, manufacturing andmeasuring equipment, software systems and other related products
for display devices. Please join in and enjoy discussions at exhibitors’
booths (Exhibition Hall B).
December 3: 12:40 – 18:00
December 4: 10:00 – 18:00
December 5: 10:00 – 14:00

11

GENERAL INFORMATIONSPONSORSHIP

IDW ’14 is sponsored by the Institute of Image Information and Television Engineers (ITE) and the Society for Information Display (SID).

CONFERENCE SITE

TOKI MESSE Niigata Convention Center
6-1, Bandaijima, Chuo-ku, Niigata City,
Niigata 950-0078
Phone: +81-25-246-8400 Fax: +81-25-246-8411 mail@tokimesse.com

ON-SITE SECRETARIAT

Telephone and fax machines for IDW ’14 use will be temporarily set up
in the secretariat room (Room 203) at TOKI MESSE (December 2-5).
Phone/Fax: +81-25-246-8511

RECEPTION

A buffet style reception will be held on December 3 from 19:00 to 21:00
at the Room “Continental” (4F) in the Hotel Okura Niigata. As thenumber of tickets is limited, you are urged to make an advancereservation through the registration website.

Pay

Thre

(1) e

Acce
h
e-Re

(2) M

Com
to th
Nove
IDW
c/o B
3-3-6
Phon
E-m
The
1
2

EVENING GET-TOGETHER WITH WINE

A get-together will be held on December 2 from 18:00 to 20:00 at
Observation Deck (31F) in Hotel Nikko Niigata. Wine (Sponsored by
Merck Ltd., Japan) will be served to participants in a relaxedatmosphere for networking.

REGISTRATION

Registration is available in advance and also on-site. However,advance registration is strongly recommended to speed up yourregistration at the conference site.

Registration Fees

The registration fee for IDW ’14 includes admission to the conference
and a CD-ROM of the proceedings. Detailed information will beannounced on the website.
Until Oct. 31 On and After Nov. 1
Individual Member¥ 35,000¥ 45,000(ITE/SID/ASO*)
Non-Member**¥ 45,000¥ 55,000
Student***¥ 8,000¥ 10,000
Life Member of ITE/SID¥ 8,000¥ 10,000
Reception¥ 8,000¥ 10,000*ASO: Academic Supporting Organizations(See p.14 as well as “Supporting Organizations and Sponsors” at theend of each workshop section.)**Non-Member: If you intend to join either ITE or SID, the one year
membership fee will be subsidized by IDW ’14 committee.
***Photocopy of student ID is required.
Please note that the payment of reduced registration fee is accepted
until October 31. The full fee will be charged for payments made on andafter November 1. Also note that the number of reception tickets toregister on site is limited.

Proceedings Data at the Conference Site

We will provide the data on USB flash drives for copying near Snow Hall.
This data can also be accessed from the web-server via the wirelessnetwork only in the Free Wi-Fi Area at the conference site.
For additional proceedings (CD-ROM)
At the conference site
¥ 8,000
Airmail after the conference¥ 12,000
Domestic mail after the conference¥ 10,000
12

P
a
i
b
All a
Also

(3) O

Con
D
D
D
D
On-s
1
2
Bank
acce

Can

Until
taria
rece
mad
be s
beco
dise
the m
who

INQ

IDW
c/o B
3-3-6
Phon
E-m

ACA

Payment

Three ways are provided for registration.

(1) e-Registration

levi.

Access the following URL.
http://www.idw.or.jp/regist.html
e-Registration will be accepted until November 21, 2014.

(2) Mail or Fax Registration

com

et up
2-5).

1:00
the
ance

0 at
d by
axed

ever,
your

ence
be

1

the

year

pted
and
s to

Hall.
less

Complete the registration form (download from the website) and send it
to the secretariat together with the proof of payment no later thanNovember 21, 2014.
IDW ’14 Secretariat
c/o Bilingual Group Ltd.
3-3-6 Kudan Minami, Chiyoda-ku, Tokyo 102-0074, Japan
Phone: +81-3-3263-1345 Fax: +81-3-3263-1264
E-mail: idw@idw.or.jp
The registration fee should be paid by one of the following methods.
1. Credit Card (VISA, MasterCard, JCB, AMEX or Diners)
2. Bank Transfer to:
Bank:
Bank of Tokyo-Mitsubishi UFJ(Swift Code: BOTKJPJT)
Branch:Ichigaya Branch (Branch No. 14)
Account No.: 0167640 (Ordinary Account)
Account:
IDW
Please attach a copy of the bank receipt to the registration form to
avoid any confusion. Please note that the remittance charges,
including that of Bank of Tokyo Mitsubishi UFJ, should be paidby the payer.
All above payments should be made in JAPANESE YEN.
Also, please note that personal and traveler’s checks are not accepted.

(3) On-site Registration

Conference registration desk will open:
December 2 (Tue.)
17:00 – 20:00
December 3 (Wed.)
8:00 – 18:00
December 4 (Thu.)
8:00 – 18:00
December 5 (Fri.)
8:00 – 13:00
On-site registration fee will be payable by:
1. Cash (JAPANESE YEN only)
2. Credit Card (VISA, MasterCard, JCB, AMEX, China Union Pay)
Bank transfer, bank checks, or personal/traveler’s checks are notaccepted.

Cancellation Policy

Until October 31, cancellation is accepted by writing to IDW ’14 Secretariat to get refunds for registration and reception. For cancellations
received on and after November 1 or no-shows, refunds will not be
made. However, after IDW ’14 closes, a CD-ROM of the proceedings will
be sent to the registrants who have paid the registration fees. If it
becomes difficult to hold IDW ’14 due to the outbreak of infectious
diseases and other unavoidable factors, we will substitute the IDW withthe mail delivery of the IDW ’14 proceedings at a later date to all those
who have registered and completed payment.

INQUIRIESIDW ’14 Secretariat
c/o Bilingual Group Ltd.
3-3-6 Kudan Minami, Chiyoda-ku, Tokyo 102-0074, Japan
Phone:+81-3-3263-1345 Fax: +81-3-3263-1264
E-mail: idw@idw.or.jp
13

• T
• T
• T
• T
• T
• T
E
• T
• I
• J
• T
• T
• T
• T

FUN

• T
• N
• N
• S
R

Fo
htt

nd it
than

.

m to
ges,
paid

ACADEMIC SUPPORTING ORGANIZATIONS (ASO)• The Chemical Society of Japan• The Electrochemical Society of Japan• The Illuminating Engineering Institute of Japan• The Imaging Society of Japan• The Institute of Electrical Engineers of Japan• The Institute of Electronics, Information and Communication
Engineers• The Institute of Image Electronics Engineers of Japan• International Electrotechnical Commission• Japan Ergonomics Society• The Japan Society of Applied Physics• The Japanese Liquid Crystal Society• The Society of Polymer Science, Japan• The Virtual Reality Society of Japan

FUNDS• The Murata Science Foundation• Niigata Prefectural Government• Niigata Visitors & Convention Bureau (Niigata City)• Support Center for Advanced Telecommunications Technology
Research, Foundation

For final updated information, please visit our website,
http://www.idw.or.jp/

ted.

ACC
JTB

Hote
http:

Hote
Prog

JT
Co

Ph
Of
E-

Ther
perio

VISA

Visit
Japa
coun
loca
Atten
the
appl
http:

JAP

Japa
shou
trave
(1) T
throu
(2) T
arou
Japa
JR E

ay)
not

creionst bes will
If it
ious
with
hose

CLIM

The
arou

14

TRAVEL INFORMATIONNACCOMMODATIONSJTB Kanto Corp. will handle arrangements for your hotel reservations.
Hotel reservations can be made at the IDW website.
http://www.idw.or.jp/accommodation.html
Hotel list and the rates are available on the Pullout of this Advance
Program.
JTB Kanto Corp.
Corporate Sales Division, Niigata, IDW ’14 Desk
Phone: +81-25-255-5101
Fax: +81-25-248-7687
Office Hours: 9:30-17:30 (Weekdays only)
E-mail: jtb_niigata_ec@kanto.jtb.jp
There will be an on-site travel information desk during the conference
period to handle arrangements for transportations.

VISAS

Visitors from countries whose citizens must have visas should apply to
Japanese consular office or diplomatic mission in their respective
countries. For further details, please contact your travel agency or the
local consular office in your country.
Attention: For some countries’ citizens, official documents prepared by
the secretariat will be needed. Please access the IDW website forapplications.
http://www.idw.or.jp/visa.html

JAPAN RAIL PASS AND JR EAST PASS

Japan Railway (JR) provides the following economical passes. They
should be purchased before you leave your country. Please contact yourtravel agency. Visit following sites for the details.
(1) The JAPAN RAIL PASS is the most economical way to travel
throughout Japan by rail and JR buses.
(2) The JR EAST PASS is an economical and flexible rail pass to travel
around Eastern Japan.
Japan Rail Pass: http://www.japanrailpass.net/eng/en001.html
JR East Pass: http://www.jreast.co.jp/e/eastpass/

CLIMATE

The average temperature in Niigata during the conference should bearound 9°C (48°F) in the daytime and 3°C (37°F) at night.

15

N
km
di
po
co
N
in
in
th
em
cr
Al
m
re
do
W
de
re
ho

PL

Sa
Sa
ac
ta
Sa
km
fro
na
N
Th
hi
va
an
ad
h
B
Th
Sh
th
co
N
th
Pr
Bu
Pr
of
pr
(1
na
Th
N
N
In
th
M
(N
h
N
en

NIIGATA CITY

ance

Niigata City is located in the center of the Japanese Islands, 250
km north of Tokyo. The city has a long history as a port, and isdistinguished for being the site of one of only five international
ports opened in 1868 when Japan resumed contact with othercountries after nearly 250 years of isolation. Since that time,
Niigata has developed into one of the most important modern
international ports in Japan. Geographically, the city is distinctivein that it is surrounded by water. The Shinano and Agano, two of
the largest rivers in Japan, run through the heart of Niigata before
emptying into the sea. Until relatively recently, the city was also
crisscrossed by a series of canals used to transport goods.
Although the canals have been filled in to make the construction ofmodern roadways possible, the willows that lined these canals still
remain today and now serve to lend a gentle air to the bustling
downtown area.
When Niigata is mentioned, many people often think of the area’s
delicious rice and sake or the city’s beautiful sunsets. But theresidents of Niigata themselves take pride, rather, in the spirit of
hospitality and community that so distinguishes the city.

ence

PLACES OF INTERESTns.

Sado Island
Sado Island lies isolated from the mainland by 35 km, and isaccessible by Sado Kisen, a ferry service from Niigata City whichtakes two and a half hours by car ferry or only one hour by jet foil.
Sado Island has a perimeter of 261 km, and a total area of 855.26
km 2. It is one of the largest islands in Japan. Many tourists comefrom all over the country every year to visit Sado, an island rich innatural beauty and historic monuments.
Niigata Furusatomura
This facility displays and provides information relating to Niigata’s
history, culture and sightseeing spots. There are shops sellingvarious traditional crafts and local products, such as sake, riceand fish, for which Niigata is famous throughout the country. In
addition, there is a food court serving delicious local dishes.
http://furusatomura.pref.niigata.jp/modules/guide09/index.php?id=2
Bandai Bridge
The present Bandai Bridge is the third to have spanned the
Shinano River (the first was built in 1887, the second in 1909 andthe third in 1929). The bridge is 307 m long, 21.9 m wide andconsists of 6 arches. Not only was it strong enough to survive theNiigata Earthquake during the 1960s, it has also become one of
the symbols of Niigata City.
Prefectural Government Memorial Hall
Built in 1884, this building was formerly home to the Niigata
Prefectural Assembly. This Western-style building fuses elementsof Western and traditional Japanese architecture. It is the only
prefectural assembly building dating from the early Meiji era(1868~1912) still in existence in Japan and is designated as anationally important cultural property.
The hall is located in Hakusan Park; 10-minute bus ride from
Niigata station.
NIIGATA INFORMATION DESK
Information concerning hotels and tours will be available during
the conference period.
More information is available from these websites:(Niigata City Online)
http://www.city.niigata.lg.jp/multilingual/e_index/index.html
Niigata Prefecture Tourism Guide
enjoyniigata.com

ly to
ctive
the

d by
for

They
your

avel

d be

16

50
is
al
er
e,
rn
ve
of
re
so
s.
of
ill
ng

a’s
he
of

is
ch
il.
26
me
in

a’s
ng
ce
In

2

Access to Conference Site
Narita Int'l
Airport(NRT)
JR Narita Exp.
56 min.
JR Haruka Exp.
50 min.

Incheon Int'l
Airport, Korea(ICN)

Flight 65 min.
11 flights / day

Int'l flight 115 min.
2 flights / day

SapporoHarbin, China
Shanghai, China etc.

Niigata Airport (KIJ)
JR Joetsu
Shinkansen Toki
115 min.

Taxi¥ 3,000 / 25 min.

¥ 13,050 from Narita Int'l Airport¥ 23,100 from Kansai Int'l AirportBus¥ 410 / 25 min.

Bus
¥ 410 / 30 min.

Taxi
¥ 2,000-3,000/ 20 min.

Niigata Station

ta
ts
ly
ra
a

ng

Osaka int'lAirportItami (ITM)

Tokyo Station

he
nd
nd
he
of

m

Flight 60 min.
2 flights / dayBus¥ 1,950 / 75 min.

Shin-Osaka
Station

JR Tokaido
Shinkansen Nozomi
153 min.

NagoyaChubu Centrair
Int'l Airport(NGO)

Kansai Int'l
Airport(KIX)

Bandai City Bus Center
Taxi¥ 1,000 / 5 min.
15 min.
on foot
Bus¥ 210 / 15 min.

Bus
¥ 210 / 5-10 min.

TOKI MESSE Niigata Convention Center(as of Oct, 2014)17

Niigata Downtown and Hotel Locations
N

Sado Kisen
Ferry Terminal

Conference Site

no

Riv
er

Toki Messe
Niigata Convention Center

Sh

ina

Toki Messe

Ryuto Bridge
Bandai Bridge

Shokugyo Anteisho Mae

Bandai City Bus Center Mae

Bandai CityBus Center(Gate 6)

Ekimae Doori*

Niigata Eki Mae(Bus Terminal)
Gate 5: 17 Sado Kisen(via Toki Messe)
Gate 6: 331 Niigata Airport

JR

ine

igo L

ch
JR E

o
Toky

su

Joet

en
kans

Shin

xit

dai E

Ban

⑩

n

atio

a St

at
Niig

AirportLimousine Bus Stop
(Platforms)

500 m

Bus route No.17* Only buses from Toki Messe stop.

① Hotel Nikko Niigata② ANA Crowne Plaza Hotel③ Bandai Silver Hotel④ Hotel Okura Niigata⑤ Niigata Grand Hotel⑥ Niigata Tokyu Inn⑦ Hotel Sunroute Niigata⑧ Niigata Toei Hotel⑨ Court Hotel Niigata⑩ Comfort Hotel Niigata
18

Phone: +81-25-240-1888
Phone: +81-25-245-3333
Phone: +81-25-243-3711
Phone: +81-25-224-6111
Phone: +81-25-228-6111
Phone: +81-25-243-0109
Phone: +81-25-246-6161
Phone: +81-25-244-7101
Phone: +81-25-247-0505
Phone: +81-25-242-0611

ns

op

“Innovative Demonstration Session”
by Oral and Poster Presenters
Live demonstrations of emerging information
display technologies
16:45 – 19:30 Thursday, December 4, 2014
12:30 – 15:15 Friday, December 5, 2014
Exhibition Hall B

IDW Best Paper AwardIDW Outstanding
Poster Paper Award
These awards will go to the most outstanding papers
selected from those presented at IDW ’14.
The 2014 award winners will be announced on the
IDW website: http://www.idw.or.jp/award.html

Evening Get-Together
with Wine
Tuesday, December 2, 2014
18:00 – 20:00
Observation Deck (31F),
Hotel Nikko Niigata(Sponsored by Merck Ltd., Japan)
See page 12 for details

19Wednesday

December 3

Plenary Sessions
Wednesday, December 3
9:30 - 9:50

Snow Hall

Opening
Master of Ceremony: S. Komura, Executive Chair, Japan Display, Japan
Opening Remarks
9:30
K. Azuma, General Chair, IDW
A. Ghosh, President of SID
K. Kubota, President of ITE
A. Mikami, Program Chair, IDW
9:50 - 11:10

Snow Hall

Keynote Addresses
Chair:
Co-Chair:A. Mikami, Program Chair, IDW
K. Azuma, General Chair, IDW

Keynote Address - 1 Recent Progress in 8K Super Hi-Vision
9:50
M. Sugawara
NHK, Japan
8K Super Hi-Vision has been developed as the next-generation
television to the current HDTV with the feature to provide viewers witha superior sensation of reality. The efforts in Japan are aimed at
conducting trial broadcasting in 2016 and starting broadcast service in2018.
Keynote Address - 2 Display Technologies in Mobile
10:30
Applications
J. Hong
Qualcomm MEMS Technologies, USA
We introduce next generation Mirasol display technology that
integrates an optical MEMS structure with an IGZO TFT backplane to
implement a reﬂective color display system that supports great image
quality in virtually all viewing conditions and a power efficiency
advantage that can be an order of magnitude better than competing
technologies.
----- Break -----

20

Wednesday

December 3

11:20 - 12:30

Snow Hall

Invited Addresses
Chair:
Co-Chair:

M. Kimura, Vice-Program Chair, IDW
Y. Gotoh, Vice-Program Chair, IDW

KAIST, Korea*ETRI, Korea

We overviewed technology and development status of oxide TFT interms of active, dielectric materials, source/drain and device structure.
Recent development issues of oxide TFT for the application to the highresolution display was also presented.
Invited Address - 2
Ultraflexible Electronics Using Organic
11:55
Devices
T. Someya
Univ. of Tokyo, Japan
We have fabricated ultrathin, ultra-lightweight, ultraﬂexible, organic
devices, such as organic thin-film transistors (TFTs), organic
photovoltaic (OPV) cells, and organic light-emitting diodes (OLEDs) on
polymeric films with the thickness of only 1 μm. Then, we apply
ultraﬂexible and stretchable organic devices for biomedical applications
and for interactive surfaces.

IDW ’15The 22nd International Display Workshops
December 9 – 11, 2015
Otsu Prince HotelOtsu, Japan
http://www.idw.or.jp
21

Plenary

Invited Address - 1
Research and Development of Oxide TFTs
11:20
S.-H. K. Park, S. H. Cho*, C.-S. Hwang*Wednesday

December 3

Special Topics of Interest on
Oxide-Semiconductor TFT
Wednesday, December 3
14:00 - 17:00

Exhibition Hall B

Poster AMDp1: Oxide TFT
AMDp1 - 1

Withdrawn

AMDp1 - 2

A 31-in. FHD AMOLED TV Driven by Amorphous
IGZO TFTs
H.-J. Zhang, C.-Y. Su, W.-H. Li, L.-Q. Shi, X.-W. Lv,
Y.-T. Hu, C.-Y. Tseng, Y.-F. Wang, C.-C. Lo
Shenzhen China Star Optoelect. Tech., China

A 31-in. FHD (1920x1080) AMOLED TV was developed with a-IGZO
backplane. The IGZO (1:1:1:4) AC sputtering system was applied tofabricate ESL type a-IGZO TFTs at Gen 4.5 glass substrate. TFTs withdifferent a-IGZO etch stopper layers were also studied to realize
excellent TFT characteristics and reliability under gate bias-stress.
AMDp1 - 3

5.8-in. Indium Gallium Zinc Oxide TFT LCD with Slim
Border
E.-C. Liu, Y.-H. Chen, S.-C. Chiang, Y.-J. Lu, Y.-Y. Huang
Chunghwa Picture Tubes, Taiwan

In this study, 5.8-in. indium gallium zinc oxide TFT LCDs were
fabricated with slim border. The slim border used by 7T2C gate-driverin panel . Due to the high mobility, the GIP circuit designed to be lower
than 1 mm in 5.8-in. indium gallium zinc oxide TFT LCDs was also
demonstrated.
AMDp1 - 4

Investigation of Hysteresis in Dual-Gate a-IGZO
TFTs
Y.-H. Kim, J. G. Um, S. Lee, M. Mativenga, J. Jang
Kyung Hee Univ., Korea

Hysteresis in dual-gate a-IGZO TFTs was investigated. The top-gate
was swept in forward and reverse modes, while the bottom-gate wasbiased negatively, grounded or biased positively. The hysteresis wasfound to be largest when the bottom-gate was biased positively –consistent with electron trapping into the top gate-insulator.

22

Wednesday
AMDp1 - 5

December 3
CVD-Free and Low Temperature Amorphous
InGaZnO TFTs for Flexible Display Applications
W.-T. Lin, C.-C. Cheng, C.-Y. Liu, M.-F. Chiang
AU Optronics, Taiwan

A low temperature (< 220 C) process ﬂow without plasma enhanced
chemical vapor deposition (PECVD) of preparing a-IGZO TFTs ispresented. All the inorganic dielectrics have been replaced to theorganic materials by the coating process, and the CVD-Free a-IGZO
TFTs also show the excellent stability under the gate bias stresses.
AMDp1 - 6

Y. W. Wang, C. M. Jian, H. H. Wang, W. L. Liu
Nat. Chang Hua Univ. of Education, Taiwan
We report the effect of time-dependent characteristics variation of solgel zinc-tin-oxide (ZTO) transistors. The sol-gel ZTO transistor could
achieve a maximum field effect mobility of 2.7 cm2/Vs, on/off ratio over
105 and a sharpest sub-threshold slope of 0.9 V/decade. The devices
have a trend to perform better as time passing.
AMDp1 - 7

Electrical Characteristics and Stability of Bottom
Gate a-InGaZnO TFTs with Different Geometric
Structures
H.-W. Li, C.-P. Chang, H.-H. Lu
AU Optronics, Taiwan

The bottom gate a-IGZO TFTs with difference geometric structures
were investigated. The effective channel length is mainly related to thesource/drain space not the island layer length. With increasing theeffective channel length, the stability of the a-IGZO TFTs could begreatly improved without degradation of the electrical characteristics.
AMDp1 - 8

Hysteresis Improvements by Introducing a DoubleActive-Layered Structure in a-InGaZnO TFTs
Y.-C. Tsai, F.-J. Chan, P.-T. Liu, H.-P. D.-D. ShiehNat. Chiao Tung Univ., Taiwan

a-IGO/a-IGZO TFTs exhibited S.S of 0.4 V/decade and hysteresis of0.40 V, whereas a-IGZO TFTs showed S.S of 0.93 V/decade andhysteresis of 1.35 V. A smoother surface roughness of 0.25 nm in
a-IGZO film was obtained by a double-active-layered structure with
a-IGO/a-IGZO. a-IGO/a-IGZO TFTs also presented less charge
trapping under NBIS stressing.

23

Oxide TFT

Investigation for the Time-Dependent
Characteristics of Sol-Gel Processed Zinc-Tin-Oxide(ZTO) Transistors

Wednesday
AMDp1 - 9

December 3
Self Heating Induced Hole Trapping at Back-Channel
Edge of Flexible a-InGaZnO TFTs under Gate andDrain Bias Stress
G. Li*, B.-R. Yang*,**, Y.-C. Tsai***, R. Zhan*, C.-Y. Su****,
C.-Y. Lee****, C.-Y. Tseng****, C.-C. Lo****, A. Lien*****,
S. Deng*, N. Xu*, H.-P. D.-D. Shieh**,****Nat. Sun Yat-Sen Univ., China**SYSU-CMU Shunde Int. Joint Res. Inst., China***Nat. Chiao Tung Univ., Taiwan****Shenzhen China Star Optoelect. Tech., China*****TCL Corporate Res., China

Self heating enhanced positive Vth shift in a-IGZO TFTs has been
widely reported. In this paper, the authors further observed humpformation during positive Vth shift. This hump is speculated to result
from the combination effect of self heating induced hole trapping andedge effect.
AMDp1 - 10 Enhancement of Performance and Storage Stabilityof Thin-Film Transistor with InZnSnO/InGaZnO
Bilayer Stack Channel Layers
X.-Y. Yeh, C.-S. Fuh, P.-T. Liu, C.-H. Chang, C.-C. Chang,
Y.-C. TsaiNat. Chiao Tung Univ., Taiwan
We investigated on electrical performance and storage issues of highefficiency amorphous In-Zn-Sn-O (IZTO) thin film transistor. By capping
additional In-Ga-Zn-O (IGZO) layer on IZTO to form the bilayer
channel. The threshold voltage and substrate swing were improved
proportionally with the thickness of IGZO capping layer.
AMDp1 - 11 Effects of Negative-Gate-Bias with Illumination
Stress on the Hysteresis in the Transfer Curve of
a-IGZO TFT Measured by the New Sampling Method
Y.-J. Chen, Z.-H. Cai, Y.-H. Tai, C.-Y. Chang, C.-J. Li*,
Y.-H. Yeh*Nat. Chiao Tung Univ., Taiwan*ITRI, Taiwan
In the study, the hysteresis in the transfer curve of a-IGZO TFTs withbias stress and illumination is analyzed. The threshold voltage
difference between the two curves in the hysteresis keeps the same,even the threshold voltages shift severely with stress time. The
difference increases with the light intensity.
AMDp1 - 12 Withdrawn

24

Wednesday

December 3

AMDp1 - 13 Reduction of Hysteresis in Transfer Characteristics
of Solution Processed IZTO TFT by Plasma
Treatment
T.-H. Kim, C. Avis, H.-R. Hwang, J. Jang
Kyung Hee Univ., Korea
We fabricated solution-processed IZTO TFT with zirconium doped AlOx
(ZAO) as the gate insulator. Plasma treatment on ZAO improves TFTsʼ
performances as follows: μsat, Vth, S.S., and hysteresis varied from 4.6
to 45.1 cm2/Vs, 0.8 to 0.2 V, 268 to 81 mV/dec., and 1.2 V to 0.4 V,
respectively.

Oxide TFT

AMDp1 - 14 Effect of Solution Processed AlOX Passivation on
Back Channel Etch a-IGZO TFTs
S. An, M. Mativenga, X. Lee, J. Jang
Kyung Hee Univ., Korea
The back surface of amorphous-indium-gallium-zinc-oxide (a-IGZO)
thin-film transistors (TFTs) with a back-channel-etched (BCE) structure
was treated with a solution-processed aluminum oxide (AlOX)
passivation layer. The result was a chemical reaction between the AlOX
solution and the a-IGZO at the back surface, which significantly
improved the stability of the BCE TFTs.
AMDp1 - 15 Impact of Negative Bias and Illumination Stress on
Channel Resistance of Back Channel Etched a-IGZO
TFTs
M. Chun, J. Um, M. Mativenga, J. Jang
Kyung Hee Univ., Korea
The impact of negative-bias-illumination-stress (NBIS) on the channel
resistance (RCH) and series resistance (RSD) of back-channel-etched(BCE) amorphous-indium–gallium–zinc-oxide (a-IGZO) thin-film
transistors (TFTs) is investigated. It is found that while the RCH
decreases, RSD increases with increasing NBIS time, indicating defectcreation under source/drain electrodes.
AMDp1 - 16L Printability of Screen Printed Silver for Oxide
Thin-Film Transistor toward a Printable Device
S. Urakawa, Y. Ishikawa, Y. Osada, M. N. Fujii, M. Horita,
Y. Uraoka
Nara Inst. of S&T, Japan
Oxide semiconductor has superior properties more than organic
semiconductor, which is one of the printable materials for all printed
devices. To realize it an oxide thin-film transistor was fabricated bysolution process. Amorphous InZnO was formed by spin-coating
method and Silver as electrode was printed by screen print method.

25

Wed./Thu.

December 3/4

AMDp1 - 17L Stable Electrical Characteristics of Solution
Processed Amorphous InZnO Thin-Film Transistors
with Organic Passivation Layers
J. Okada, T. Nagase, T. Kobayashi, H. Naito
Osaka Pref. Univ., Japan
Solution-processed organic passivation layers for amorphous InZnO
thin-film transistors (TFTs) have been shown. Solution-processed
amorphous InZnO TFTs with the organic passivation layers exhibit
good electrical stability of the threshold voltage shift of less than 1.9 V
after bias stress time of 10000 s.
AMDp1 - 18L ITO Interlayer to Improve the Electrical Performanceof HfInZnO-TFTs
J. Li, J.-H. Zhang, H. Zhang, X.-Y. Jiang, Z.-L. Zhang
Shanghai Univ., China
We have fabricated hafnium-indium-zinc-oxide (HfInZnO) thin filmtransistors (TFT) with indium-tin-oxide (ITO) interlayer. Compared withconventional HfInZnO-TFT, the electrical performance and bias stabilityof HfInZnO-TFTs with ITO interlayer are improved. The performanceenhancement is attributed to a decrease in interface trap state and anincrease in carrier concentration.

Thursday, December 4
9:00 - 10:15

Snow Hall A

AMD1: High Resolution Displays Using LTPS and Oxide TFTs
Chair:
Co-Chair:T. Kamiya, Tokyo Inst. of Tech., Japan
K. Takatori, NLT Techs., Japan

AMD1 - 1:
9:00

Invited High PPI Technologies for Mobile Displays
A. Takimoto
Japan Display, Japan

High pixel density LCD technologies have been continuously
developed. Recently, high pixel density displays with touch interface
have become the standard for smartphones. Tablet PCs follow thesame trend. However, further development may face technicalchallenges. In this paper, the latest developments to tackle these
problems are discussed.

26

Thursday
AMD1 - 2:
9:25

December 4
Invited Advantages of IGZO Platform in Ultra-HighResolution LCD Applications
N. Ueda, Y. Ogawa, K. Okada, A. Oda, S. Katoh,
S. Uchida, K. Yamamoto, T. Matsuo, H. Kawamori
Sharp, Japan

This paper describes the advantages of Oxide TFT platform technology
in ultra high resolution displays making use of Channel Etch (CE) Type
Oxide TFT. It also explores the latest and future approach to resolve
emerging concerns, such as panel driving power consumption,
aperture ratio, and narrow bezel.
Invited Ultra High-Definition OLED Display Using
C-Axis Aligned Crystalline Oxide Semiconductor
FETs

Oxide TFT

AMD1 - 3:
9:50

H. Miyake, S. Kawashima, S. Inoue, M. Shiokawa,A. Suzuki, S. Eguchi, Y. Hirakata, J. Koyama,
S. Yamazaki, T. Sato*, T. Shigenobu*, Y. Ohta**,S. Mitsui**, N. Ueda**, T. Matsuo**
Semiconductor Energy Lab., Japan*Advanced Film Device, Japan**Sharp, Japan
We fabricated an 8K OLED display. Channel-etch type c-axis aligned
crystalline oxide semiconductor (CAAC-OS) FETs demonstrate good
properties even in the channel length of 1.5 μm. Gap spacers between
pixels suppress leakage current through an intermediate layer of thetandem OLED.
9:00 - 12:00

Exhibition Hall B

Poster FMCp4: Oxide TFT/Printed Electronics
FMCp4 - 1
9:00

Effect of Cu Dopant on Structural and Optical
Properties of Zinc Oxide Nanorods
Z. Jin, T. Umakoshi, Y. Abe, M. Kawamura, K. H. Kim
Kitami Inst. of Tech., Japan

We investigated structural and optical properties of Cu-doped zincoxide (CZO) nanorods (NRs) fabricated by chemical solution
deposition. With incorporation of Cu (10 at%) dopant, the length andcrystallinity of NRs increased and improved, respectively, compared toZnO NRs. However, the transmittance of CZO NRs was lower than ZnO
NRs27

Thursday
FMCp4 - 2

December 4
Post-Annealing Effect of Zinc Oxide Nanorods
Grown on Al-Doped Zinc Oxide Seed Layers
T. Umakoshi, Y. Abe, M. Kawamura, K. H. Kim
Kitami Inst. of Tech., Japan

We fabricated zinc oxide (ZnO) nanorods (NRs) grown on ZnO and Aldoped ZnO (AZO) seed layers and investigated post-annealing effects
on their structural and optical properties. Length of NRs increased byadding Al dopant in seed layer. The morphology and transmittancewere less changed after post-annealed at 500˚C.
FMCp4 - 3

Application of Microwave-Detected
Photoconductivity Decay Technique to Process
Monitoring in Back Channel Etching-Type TFT
Fabrication
H. Goto, M. Ochi, H. Tao, S. Morita, Y. Takanashi,
A. Hino, K. Hayashi, T. Kugimiya
Kobe Steel, Japan

We have conducted a feasibility study on the application of microwavedetected photoconductivity decay (μ-PCD) technique to processmonitoring in back channel etching-type (BCE) TFTs. By measuring the
μ-PCD at the back channel area of the TFTs in each process steps,
variations of the film characteristics can be precisely detected.
FMCp4 - 4

Copper Nano Particle Ink for Reverse Offset Printing
and the Application to Thin Film Transistors
M. Koutake*,***JAPERA, Japan**DIC, Japan

Copper nanoparticle ink specialized for reverse offset printing has beendeveloped and applied to make electrodes for OTFTs. The copper ink
sintered by Xe intense ﬂash light in ambient atmospheric conditions
showed good conductivity and compatibility with an organic
semiconductor.
FMCp4 - 5L Hard X-ray Photoelectron Spectroscopic Study
under Bias Voltage for Interface States at SiO2/
a-InGaZnO Interface
S. Yasuno, H. Oji, T. Watanabe, I. Hirosawa
JASRI, JapanThe energy distribution of the interface states for SiO2/a-IGZO interface
was evaluated using hard X-ray photoelectron spectroscopy (HAXPES)
under bias voltage. It was found that the interface states are observed
throughout the band gap of a-IGZO and there exists the largest gap
state near the conduction band edge.

28

Thursday

December 4

10:45 - 12:20

Snow Hall A

AMD2: Physics of Oxide Semiconductors
Chair:
Co-Chair:J. Jang, Kyung Hee Univ., Korea
N. Morosawa, Sony, Japan

AMD2 - 1:
10:45

Invited Multiple Origins of Near-VBM Defects and Its
Passivation Effects in a-In-Ga-Zn-O
T. Kamiya, H. Kumomi, H. Hosono
Tokyo Inst. of Tech., Japan

AMD2 - 2:
11:10

Invited Thermalization Energy Analysis of theStability of Amorphous Oxide Thin Film Transistors
A. J. Flewitt
Univ. of Cambridge, UK

TFTs incorporating amorphous oxide semiconductors as the channelmaterial are known to suffer from threshold voltage shifts under both
positive and negative gate bias conditions. The thermalization energy
will be covered as a means of converting measurements as a functionof time into measurements as a function of energy.
AMD2 - 3:
11:35

Invited Origin of High Photoconductivity Gain and
Persistent Photoconductivity in Nanocrystalline
Oxide Photo-Sensors
S. Jeon
Korea Univ., Korea

We present the mechanism of high photoconductivity gain andpersistent photoconductivity in nano-crystalline oxide photo-transistor.
Under the illumination, sub-gap optical absorption in oxide
semiconductor causes the ionization of oxygen vacancy, which leads tohigh photocurrent in an operation condition. Also, the origin of
persistent photoconductivity will be discussed.

RECEPTION
Wednesday, December 3, 2014
19:00 – 21:00
Room “Continental” (4F)
Hotel Okura Niigata
See page 12 for details

29

Oxide TFT

Amorphous oxide semiconductor, represented by a-IGZO, exhibits highelectron mobilities > 10 cm2/Vs even if deposited at room temperature.
Several defects and effects of hydrogen and oxygen have beenreported to date. This paper reviews recent results on these issues anddiscuss their effects on optimum deposition condition for a-IGZO.

Thursday
AMD2 - 4
12:00

December 4
Differences in Crystalline Morphology among
Crystalline Oxide Semiconductors
K. Dairiki, Y. Nonaka, M. Koyama, Y.Yamada,
A. Shimomura, N. Sorida, E. Takahashi, M. Takahashi,
S. Yamazaki
Semiconductor Energy Lab., Japan

We compared crystalline morphologies of c-axis aligned crystalline InGa-Zn-O (CAAC-IGZO) with those of single crystalline andpolycrystalline IGZO. The CAAC-IGZO has c-axis alignment but does
not have alignment along a-b plane and clear grain boundaries.
Therefore, the crystalline morphology of CAAC-IGZO is clearly
distinguishable from those of other crystalline states.
----- Lunch ----13:30 - 14:55

Snow Hall A

AMD3: Stability of Oxide TFT
Chair:
Co-Chair:S. Jeon, Korea Univ., Korea
M. Kimura, Ryukoku Univ., Japan

AMD3 - 1:
13:30

Invited Improved Electrical Characteristics andStability Using Various Post Treatments on
Sputtered In-Ga-Zn-O Thin-Film Transistors
Y. J. Tak, S. P. Park, H. Lee, H. J. Kim
Yonsei Univ., Korea

We have demonstrated various post treatments including high pressure
annealing, simultaneous UV and thermal treatment, and doped
passivation layer. These treatments have been performed to improvestabilities and electrical characteristics on sputtered In-Ga-Zn-O thinﬁlm transistors by reducing defect sites related to oxygen vacancies
and increasing metal oxide bonds.
AMD3 - 2
13:55

Reliability of Amorphous InGaZnO Thin Film
Transistors with Low Water-Absorption Passivation
Layer
S. Ishikawa, T. Miyasako, H. Katsui, K. Tanaka,
K. Hamada, C. Kulchaisit*, M. Fujii*, Y. Ishikawa*,
Y. Uraoka*
JSR, Japan*Nara Inst. of S&T, Japan

Polymer passivation with low water absorption has been investigatedfor high reliable amorphous InGaZnO (a-IGZO) TFT. The photosensitive
siloxane/silsesquioxane (SSQ) material is coated by a solution process
without plasma etching process to avoid serious damage to thechannel layer. The stability of a-IGZO TFTs was improved by polarity
controlled siloxane material.

30

Thursday

December 4

AMD3 - 3
14:15

Channel Length Dependent Bias and Light Stabilityof Bulk Accumulation a-IGZO TFTs with Top Gate
Offsets
S. Lee, M. Mativenga, J. Jang
Kyung Hee Univ., Korea

Effect of bulk-accumulation on the negative-bias-illumination-stress(NBIS) stability of dual gate-driven a-IGZO TFTs with 2-µm tog-gateoffsets is investigated. By varying the channel length, it is shown that
the TFTs are immune to NBIS, as long as half of the channel region islight shielded and under bulk-accumulation.
Effect of Parasitic Capacitance on Pixel
Compensation Circuit Developed by Oxide TFT
C.-Y. Lee, W.-C. Hsu, M.-W. Shih, Y.-L. Chen,
C.-C. Huang, L.-W. Liu, C.-K. Lo, H.-G. Chang, C.-H. Liu,
L.-F. Lin, H.-S, Lin, L.-H. Chang, Y.-H. Lin
AU Optronics, Taiwan
We have developed the pixel compensation circuit of 65-in. AMOLED
Display, which was demonstrated in 2013. The effect of inherent
parasitic capacitance, will be presented in this paper. To achieve a
better performance of panel uniformity and reduce the inﬂuence ofparasitic capacitance, the optimization of pixel design is necessary.
----- Break ----15:15 - 16:45

Snow Hall A

AMD4: Higher Performance Oxide TFT
Chair:
Co-Chair:

H. J. Kim, Yonsei Univ., Korea
H. Kumomi, Tokyo Inst. of Tech., Japan

AMD4 - 1:
15:15

Invited Bulk Accumulation Oxide TFTs for High
Resolution Displays
J. Jang, M. Mativenga, D. Geng
Kyung Hee Univ., Korea

Owing to bulk-accumulation, dual-gate amorphous-indium-gallium-zincoxide (a-IGZO) thin-film transistors (TFTs) with top- and bottom-gates
electrically tied together exhibit higher on-current, better turn-on
voltage uniformity and lower sub-threshold voltage swing compared tosingle-gate-driven a-IGZO TFTs. In this talk, their optimization andapplication to fast TFT circuits and high resolution displays, arereviewed.

31

Oxide TFT

AMD3 - 4
14:35

Thursday
AMD4 - 2
15:40

December 4High Mobility Zn-Free Oxide Thin Film Transistors
T. Kugimiya, M. Ochi, A. Hino, H. Goto, Y. Takanashi,
M. Kanamaru*
Kobe Steel, Japan*Kobelco Res. Inst., Japan

We have developed a new Zn-free oxide thin-film transistor (TFT) withhigh field effect mobility above 60 cm2/Vs. The TFT of etch stop layer
structure requires no additional process to conventional process for a
TFT. The new oxide-TFT shows excellent characteristics with a positive
threshold voltage of 0.5 V, sub-threshold swing (SS) of 0.19 V/decade.
AMD4 - 3
16:00

Amorphous In2O3-Based Thin Film Transistors
Fabricated by Low-Thermal Budget Process withHigh Mobility and Transparency
C.-H. Chang, C.-S. Fuh, C.-J. Chang, C.-C. Chang,
X.-Y. Yeh, P.-T. Liu, H.-H. Lin*, K.-L. Fang*, Y.-C. Kao*,
C.-L. Lee*, P.-L. Shih*, W.-C. Chang*, I.-M. Lu*
Nat. Chiao Tung Univ., Taiwan*Yeh Hsin Tech., Taiwan

In this work, the inﬂuence of annealing on In-W-O (a-IWO) TFTs wasinvestigated. The 100oC-annealed a-IWO TFTs exhibited an optimized
performance with mobility of 39.16 cm2/Vs. Owing to the energy fromannealing process, the structural relaxation can be enhanced leading
to a better electrical characteristic of a-IWO TFTs.
AMD4 - 4L: Invited Large-Sized and UHD Curved OLED TV
16:20
Employing White OLEDs and Oxide TFTs
C.-W. Han, H. Kang, Y.-H. Shin, H.-J. Shin, B.-C. Kim,
H.-S. Kim, B.-S. Kim, Y.-H. Tak, C.-H. Oh, B.-C. Ahn
LG Display, Korea
In this paper, we will introduce technological progress forcommercializing large-sized and UHD curved OLED TV. Thosetechnologies including WOLEDs, Oxide TFTs, compensation circuit andsolid phase encapsulation enable panel size scalability as well as mass
production with lifetime reliability.
Author Interviews and Demonstrations
18:30 – 19:30

32

Friday

December 5
Friday, December 5

9:00 - 10:15

Marine Hall

AMD6: Chemistry of Oxide Semiconductors and TFT
Chair:
Co-Chair:

K.-H. Su, Evonik Inds., Germany
K. Takatori, NLT Techs., Japan

AMD6 - 1L
9:00

Improvement of Positive Bias and Temperature
Stress Stability by Fluorine Passivated In-Ga-Zn-O
Thin-Film Transistors
J. Jiang, T. Toda, D. Wang, M. Furuta

Positive bias and temperature stress (PBTS) stability of InGaZnO(IGZO) thin-film transistors (TFTs) with SiOX and ﬂuorinated silicon
nitride passivation were investigated. It was found that ﬂuorine
effectively passivated traps and weakly bonded oxygen in IGZO and/or
at gate insulator/IGZO interface, resulting in the improvement of PBTS
for oxide TFTs.
AMD6 - 2L
9:15

Chemical Analysis of Fluorine in Highly Reliable
Oxide Thin Film Transistor with Silicon Nitride Gate
Insulator
H. Yamazaki, Y. Ishikawa, M. N. Fujii, J. P. S. Bermundo,
E. Takahashi*, Y. Andoh*, Y. Uraoka
Nara Inst. of S&T, Japan*Nissin Elec., Japan

We propose highly stable amorphous In-Ga-Zn-O thin-film transistors(a-IGZO TFTs) with ﬂuorinated silicon nitride (SiNx:F) gate insulator
against voltage bias and temperature stress. Result of X-ray
photoelectron spectroscopy (XPS) measurement revealed that Indium
bound with ﬂuorine in a-IGZO plays the dominant role to improve the
TFT reliability.
AMD6 - 3L
9:30

Quantitative Verification Method of IGZO TFT
Characteristics Using Oxygen Incorporation
Calculation
J. Noh, H. J. Koo, J. S. Seo, S. H. Park, P. S. Yun,
J. U. Bae, K.-S. Park, I. Kang
LG Display, Korea

The amount of Oxygen incorporation on IGZO film during deposition is
one of the main factors that significantly affect the electrical properties
IGZO TFTs. In this work, we report the quantitative verification methodof IGZO TFT characteristics using oxygen incorporation calculation andinvestigate the correlation between calculation and TFT characteristics.

33

Oxide TFT

Kochi Univ. of Tech., Japan

Friday
AMD6 - 4L
9:45

December 5
Excimer Laser Annealing of Amorphous Oxide
Thin-Film Transistors Passivated with Hybrid
Passivation Layer
J. P. S. Bermundo, Y. Ishikawa, M. N. Fujii,
M. V. D. Zwan*, T. Nonaka**, R. Ishihara*, Y. Uraoka
Nara Inst. of S&T, Japan*Delft Univ. of Tech., The Netherlands**AZ Elect. Materials Manufacturing Japan, Japan

We performed excimer laser annealing on passivated amorphous oxide
semiconductor thin-film transistors such as amorphous InZnO andInGaZnO. These thin-film transistors were passivated by a hybrid
passivation known as polysilsesquioxane. We show that excimer laser
annealing is a good low temperature annealing method for highperformance amorphous oxide thin-film transistors.
AMD6 - 5L
10:00

Effect of Wet-O2 Annealing on the Characteristics of
Solution-Derived Amorphous InZnO Thin-Film
Transistors
Y. Osada, Y. Ishikawa, M. N. Fujii, Y. Uraoka
Nara Inst. of S&T, Japan

We investigated the effect of wet-O2 annealing on the characteristics ofamorphous InZnO thin-film transistor fabricated by spin-coatingprocess. The wet-O2 annealing improved the field-effect mobility andthe sub-threshold swing value. Furthermore, the device yield wassignificantly improved.
----- Break ----10:45 - 11:45

Marine Hall

AMD7: Back-Channel Etched Oxide TFT
Chair:
Co-Chair:T. Noguchi, Univ. of the Ryukyus, Japan
H. Kumomi, Tokyo Inst. of Tech., Japan

AMD7 - 1L
10:45

Fabrication of Back-Channel-Etch (BCE) a-InGaZnO
TFT with a Damage Free Wet Chemical EtchantT.-C. Fung, C. Kim, T. Chang, J. Hong, P. Vermeulen*,
P. Janseen*, Y. Lu*, S. Collins*, L. Robichaux*
Qualcomm MEMS Technologies, USA*SACHEM, USA

A-IGZO TFTs with back-channel-etch structures were demonstrated.
Mo source/drain electrodes were patterned by Sachemʼs proprietary
formulation. With a high etch selectivity; BCE can be performed without
damaging the IGZO layer. Our BCE TFTs exhibit a sub-thresholdswing, Von and mobility comparable with those of conventional ESLtype TFT.

34

Friday
AMD7 - 2L
11:00

December 5
Oxide Semiconductor Thin Film Transistor
Compatible with Cu Interconnection Fabricated by
Back Channel Etching
S. Morita, M. Ochi, H. Tao, H. Goto, T. Kugimiya,
M. Kanamaru*
Kobe Steel, Japan*Kobelco Res. Inst., Japan

AMD7 - 3L
11:15

Application of High Stable Solution-Process MetalOxide Semiconductor in a Back-Channel-EtchingThin-Film Transistor
K.-H. Su, M. Marinkovic, D.-V. Pham, A. Merkulov, A.
Hoppe, R. Anselmann
Evonik Inds., Germany

Evonik has been working on solution-process metal oxide for a few
years, and we now present a more highly etching-resistive metal-oxide
semiconductor than the sputter one. We have achieved high mobility(10 cm2/Vs) and stable and homogeneous characteristics in the oxideTFT by introducing iXsenic semiconductor into the BCE structure. With
its remarkable performance, our material is also successfully applied ina high-resolution display product for mobile applications.
AMD7 - 4L
11:30

Back-Channel Etched Amorphous IGZO TFTs Using
the Copper as the Gate/Data Line Metal
C.-Y. Hou, C.-Y. Tu, C.-N. Lin, S.-F. Wu, S.-C. Lee,
W.-C. TsaiAU Optronics, Taiwan

BCE structure IGZO TFT using copper as the source/drain metal anddifferent passivation layer were studied. The device characteristics andreliability of Cu BCE structure IGZO TFT can be improved by modifying
the annealing temperature and passivation layer.
----- Lunch -----

Author Interviews and Demonstrations
18:30 – 19:30

35

Oxide TFT

We report successful fabrication of back channel etch type oxide
semiconductor TFTs with Cu interconnection. By using originallydeveloped amorphous oxide semiconductor which is highly resistive toacid etchants, etching damage to a channel portion was prevented. The
TFTs show a low sub-threshold swing 0.22 V/decade and highreliability.

Thursday

December 4

Special Topics of Interest on
Augmented Reality and Virtual Reality
Thursday, December 4
9:00 - 10:35

Room 302 B

DES1: Display Technologies in Augmented Reality
Chair:
Co-Chair:K. Kiyokawa, Osaka Univ., JapanK. Makita, AIST, Japan

DES1 - 1:
9:00

Invited Diminished Reality Based on Image
Inpainting for Visually Removing Real Objects inReal Time
N. KawaiNara Inst. of S&T, Japan

We introduce our diminished reality method that removes real objects
from video images in real time. The proposed method achieves
generation of high-quality background textures and temporal
coherence of textures for 3D scenes by analyzing the backgroundgeometry using a Visual-SLAM method.
Also presented in Innovative Demonstration Session (see p. 213)
DES1 - 2:
9:25

Invited HMD Technologies for AR
K. Kiyokawa
Osaka Univ., Japan

This article introduces technology trends and future visions of head
mounted displays (HMDs) for augmented reality. Specifically, recent
research on wide field-of-view head mounted visual displays, and multifocal head mounted displays will be introduced, and future challenges
and visions will be discussed.
Also presented in Innovative Demonstration Session (see p. 213)
DES1 - 3:
9:50

Invited Fog Display as a Co-creative Expression
Media
Y. Miwa, S. Itai, Y. Terada
Waseda Univ., Japan

In our view, fog displays are characterized by the lack of any clear
distinction between the image and actual spaces. That is, fog displays
are essentially borderless. The development of the embodied media
and support of co-creative expression are demonstrated in the“Massive fog display” and “Fog box” systems, respectively.
Also presented in Innovative Demonstration Session (see p. 213)

36

Thursday
DES1 - 4
10:15

December 4
Security Door
H.-F. Wang, C.-C. Lan, J.-Y. Huang, T.-H. Lin, H.-S. Chen
Nat. Taiwan Univ. of S&T, Taiwan

This paper presents a practical “security door” to create an illusion ofseeing outdoor view through the indoor. This illusion is achieved bytransferring information from two cameras which are disposed at
outdoor area, and then their images are cast on the indoor by a display.
----- Break ----10:45 - 11:50

Room 301

PRJ4: Wearable Display
S. Shikama, Setsunan Univ., Japan
S. Ouchi, Hitachi, Japan

PRJ4 - 1:
10:45

Invited Laser Light Field Display Based on a Retinal
Scanning Array
M. Ide, K. Yoda, S. Kato
Citizen Holdings, Japan

We present a near-to-eye laser light field display system using a MEMS
scanner in combination with a microlens array. The system functions as
a high-resolution tiled retinal-scanning array and creates multiple
projection images on the retina. This gives the system a refocusing
feature that can be applied to near-to-eye displays.
Also presented in Innovative Demonstration Session (see p. 212)
PRJ4 - 2
11:10

Compact Optical Engine for SmartGlass
H. Baba, T. Totani, T. Hashizume
Seiko Epson, Japan

After commercializing SmartGlass “MOVERIO-BT100” in Nov. 2011,
EPSON has commercialized compact and lighter weight SmartGlass“MOVERIO-BT200” in June this year. New design of compact
projection lens and light-guide, and finer micro display is discussed andsummarized.
Also presented in Innovative Demonstration Session (see p. 213)
PRJ4 - 3
11:30

Light-Guide Optical Element Utilizing Notch Filters
for See-Through Glasses
X. Xiao, X. Lin, X. Tan
Beijing Inst. of Tech., China

Eyewear display is a new type of portable mobile devices. A new way
to achieve see-through glasses is proposed. Light-guide with an arrayof notch filters designed to partially reﬂect special narrow bands of thespectrum are used to coupling light from the microdisplay to the eye ofthe viewer.
----- Lunch ----37

AR & VR

Chair:
Co-Chair:Thursday

December 4

13:30 - 14:45

Room 301

INP3: AR Interactive Systems
Chair:
Co-Chair:N. Hashimoto, Citizen Holdings, Japan
N. Berkner, Ricoh Innovations, USA

INP3 - 1:
13:30

Invited System Design Considerations for PersonalLight Field Displays for the Mobile Information
Gateway
W. Wu, N. Balram, I. Tošić, K. Berkner
Ricoh Innovations, USA

Existing mobile devices are fundamentally limited with their small
screen sizes. A promising direction in the quest for next generation
human interfaces is the development of personal near-eye light field
displays. We present a review of existing techniques in this field anddiscuss their system design considerations and tradeoffs.
INP3 - 2:
13:55

Invited Further Analysis of the R-V Dynamics
Illusion on Sense of Weight
S. Hashiguchi, Y. Kataoka, F. Shibata, A. Kimura
Ritsumeikan Univ., Japan

In mixed reality space, we can change appearances of a real object (R)and virtual object (V). In this study, we visually change movements of
the real and virtual objects and observe the inﬂuences of the virtual
objectʼs dynamics on the sense of the weight of the real object.
INP3 - 3L:
14:20

Invited Interactive Technologies with Applied
Perception
J. Watanabe, S. Hirabara*, T. Maeda*, H. Ando*
NTT, Japan*Osaka Univ., Japan

When we develop display technologies, the features of human action
and perception are potential resources of information presentation. We
introduce information displays that work on the basis of thecharacteristics of the human perceptual system.
Also presented in Innovative Demonstration Session (see p. 215)----- Break -----

38

Thursday

December 4

15:15 - 16:45

Room 301

3D2: Interactive 3D Display Technology
Chair:
Co-Chair:

M. Tsuchida, NTT, JapanK. Yamamoto, NICT, Japan

3D2 - 1:
15:15

Invited Interactive Display Technologies Using
High-Speed Image Processing
M. Ishikawa
Univ. of Tokyo, Japan

Design concepts for implementing low latency interface using highspeed image processing and immersive interactive 2D/3D display
systems such as commercial 3D display, emerging aerial display,
dynamic projection mapping, high speed information environment,
volume slicing display, and deformable workspace will be shown by
using videos of those systems.
Invited Floating Digital Signage Based on Aerial
Imaging Techniques

AR & VR

3D2 - 2:
16:00

H. Yamamoto*,**,***, S. Suyama****Utsunomiya Univ., Japan**JST-CREST, Japan***Univ. of Tokushima, Japan

This paper reviews our ﬂoating digital signage techniques. After
introducing design issues for ﬂoating LED signage, we introduce andshow experimental results on two types of optical components:
crossed-mirror array enables ﬂoating visual and thermal display; AIRR
(aerial imaging by retro-reﬂection) forms ﬂoating LED screen with wideviewing angle.
Also presented in Innovative Demonstration Session (see p. 214)
3D2 - 3L
16:30

Comparison of Material Combinations for Brightand Clear Floating Image by Retro-Reflective Reimaging Technique
Y. Tokuda, A. Hiyama, M. Hirose, T. Large*
Univ. of Tokyo, Japan*Microsoft Appl. Scis. Group, USA

We investigate a solution to create clear and bright ﬂoating images
from LCD display by comparing 16 different kinds of retro-reﬂectors
and beam-splitters for a pseudo-phase-conjugation-effect. We found areﬂective polarizer film can enhance the brightness and corner-cube
array retro-reﬂectors can create clearer results than glass beads typefor LCD.
Also presented in Innovative Demonstration Session (see p. 214)----- Break -----

39

Thursday

December 4

17:00 - 18:40

Room 301

3D3: Omnidirectional Hyper-Realistic System
Chair:
Co-Chair:K. Yamamoto, NICT, Japan
M. Tsuchida, NTT, Japan

3D3 - 1:
17:00

Invited Characteristic of the Ultra-Realistic Dome
Images Estimated from Viewing Behavior
M. Okyudo, C. Yoshizumi
Wakayama Univ., JapanThe audience can feel realistic sensation by the dome images better
than by the general ﬂat images. We studied the characteristic of thedome images estimated from viewing behavior. As a result, the headʼsmotion is raising the realistic. Then, we propose the dome viewing towatch Tokyo Olympic 2020.
3D3 - 2:
17:25

Invited Development of Spherical Image Camera
RICOH THETA
M. Shohara
Ricoh, JapanA spherical image camera RICOH THETA is an emerging digital
camera. The development of a spherical image camera is different froma conventional digital camera. We had to optimize the ways of the lensdesign, image processing and user interface. This paper explains thetechnical challenges during the development.
3D3 - 3:
17:50

Invited Omnidirectional Video Streaming Systemwith HMD
D. OchiNTT, JapanAn interactive video streaming technology that lets users view theirfavorite sections of events recorded with a 360 omnidirectional camera
is proposed. This technology provides an immersive experience with aninteractive view of any direction through an HMD following the user's
head orientation within a reasonable amount of network bandwidth.
Also presented in Innovative Demonstration Session (see p. 214)
3D3 - 4:
18:15

Invited Holographic HMD with Wide Visual Field
Y. Sakamoto
Hokkaido Univ., JapanAn electro-holographic display has a potential to be an ultimate threedimensional (3D) display, however the visual ﬁeld is narrow due toinsufﬁcient resolutions of the electronic devices. This paper reports ourcolor electro-holographic head mounted display (HMD) with a widevisual ﬁeld.
Author Interviews and Demonstrations
18:30 – 19:30
40

Friday

December 5
Friday, December 5

9:00 - 10:00

Snow Hall B

FMC4: Augmented Reality and Virtual Reality
Chair:
Co-Chair:

H. Okumura, Toshiba, Japan
M. Shinohara, Omron, Japan

FMC4 - 1:
9:00

Invited Wide Field of View Optical Combiner for
Augmented Reality Head-Up Displays
H. Okumura, A. Hotta, T. Sasaki, K. Horiuchi, N. Okada
Toshiba, Japan

Wide field of view combiners for head-up displays are reviewed and ouroriginally developed combiner using Fresnel reﬂector that acts both asa concave reﬂector for reﬂected light and a ﬂat plate for transmitted
light has been introduced.
Also presented in Innovative Demonstration Session (see p. 214)

AR & VR

FMC4 - 2
9:20

Panoramic 3D Floating Image Display Using Dual
Concave Reflectors
K. Li
Wavien, USA

This paper discloses 3D ﬂoating image systems that uses parabolicand elliptical reﬂectors with the ability of displaying ﬂoating images witha full 360-degree horizontal viewing angles. This will have applications
in merchandizing displays, museums, theme parks, etc. Several opticalconfigurations will be presented.
FMC4 - 3
9:40

Fabrication of Special Glass-Beads Retroreflector
for Aerial Imaging by Retro-Reflection
Y. Tomiyama*, S. Suyama*, H. Yamamoto*,**,****Univ. of Tokushima, Japan**JST-CREST, Japan***Utsunomiya Univ., Japan

AIRR (Aerial Imaging by Retro-Reﬂection) enables ﬂoating LED
signage. In order to prevent blurring with ﬂoating distance, we propose
a special glass-beads retroreﬂector. We have fabricated a retroreﬂector
with glass beads whose refractive index is 2.0. As paraxial
approximation suggests, the fabricated retroreﬂector reduced beam
spread with ﬂoating distance.
Also presented in Innovative Demonstration Session (see p. 214)----- Break -----

41

Friday

December 5

10:45 - 12:30

Room 201

DES3/VHF5: System Design and Evaluation in Augmented Reality
Chair:
Co-Chair:K. Morita, Nat. Traffic Safety & Environment Lab., Japan
K. Sakamoto, Panasonic, Japan

DES3/
VHF5 - 1:
10:45

Invited Simulation of Traffic Accident Scenarios with
an Augmented Reality Vehicle
N. Uchida, T. Tagawa, K. Sato
Japan Automobile Res. Inst., Japan

Observing drivers' behaviours by reproducing traffic accidents andconﬂict situations is important for developing advanced driver assistantsystems. For the purpose, an instrumented vehicle, named the JARIARV (Japan Automobile Research Institute - Augmented Reality
Vehicle), was developed to reproduce realistic traffic accident andconﬂict scenarios without endangering the driver.
DES3/
VHF5 - 2:
11:10

Invited The Realistic 3D Image Display Using Direct
Light Scanning Method
H. Horimai, K. Hattori*, T. Umezaki
3Dragons LLC, Japan*Chubu Univ., JapanThe realistic 3D image displays using Direct Light Scanning Method,so-called Holo-Table/Holo-Deck have become available. The features ofthese displays are not only large number views but also high density ofviews. Because of these features, users can see a 3D scene from any
directions with smooth motion parallax.
Also presented in Innovative Demonstration Session (see p. 215)
DES3/
VHF5 - 3
11:35

Fast Calculation Algorithm Based on Point-Based
Method for CGHs Using Polygon ModelY. Ogihara, Y. Sakamoto
Hokkaido Univ., Japan

Computer-generated holograms (CGHs), which are made by simulating
light propagation using a computer, are able to represent virtual
objects. However, an enormous amount of calculation time is needed tomake CGHs. We propose the fast calculation algorithm with pointbased method to make CGHs of the polygon model.

SID Display Week 2015
May 31 – June 5, 2015
San Jose Convention Center
San Jose, California, U.S.A.
42

Friday

December 5
The Superiority of Widespread Monocular
Augmented Reality Presentation in a Manual Tracing
Task

DES3/
VHF5 - 4
11:55

A. Kitamura, H. Naito, T. Kimura*, K. Shinohara,
T. Sasaki**, H. Okumura**
Osaka Univ., Japan*Kansai Univ. of Welfare Scis., Japan**Toshiba, Japan
We conducted two experiments involving a tracing task withaugmented reality image presentation covering a visual field observedin monocular or binocular mode. Performance on the tracing task was
better in monocular mode relative to binocular mode, demonstrating
the superiority of monocular AR presentation for performance of amanual task.
DES3/
VHF5 - 5L
12:15

A Fundamental Study of an Augmented Reality
System for Road Maintenance Services
AIST, Japan

In this paper, a fundamental study of an augmented reality system forsupporting road maintenance is described. For realizing efficient roadmaintenance, we implemented a prototype augmented reality systemusing a camera fixed in the environment and a hand held device tovisualize degenerate parts of the roads.
Author Interviews and Demonstrations
16:45 – 17:45

Innovative Demonstration Session
by Oral and Poster Presenters

Live demonstrations of emerging information
display technologies
16:45 – 19:30 Thursday, December 4, 2014
12:30 – 15:15 Friday, December 5, 2014
Exhibition Hall B
See Page 212 - 215 for details
43

AR & VR

K. Makita, C.-T. Chang, R. Ichikari, T. Okuma, T. Kurata

Thursday

December 4

Special Topics of Interest on
Lighting Technologies
Thursday, December 4
9:00 - 12:00

Exhibition Hall B

Poster FMCp3: Lighting Technologies
FMCp3 - 1

Construction of a Backlight Module by Connecting
Unit Cells with an Optical Fiber
T. Kojima, Y. Asakura, T. Ogawa, I. Fujieda
Ritsumeikan Univ., Japan

A backlight module can be constructed by connecting unit cells with acurved optical fiber. In a unit cell, a trench fabricated on one surface ofa transparent plate houses the optical fiber and output couplers areplaced on the other surface of the plate.
FMCp3 - 2

Effect of LGP Outline on Edge-Lit LED TV Design
H. He, Y.-Y. Qiu
Shenzhen China Star Optoelect. Tech., China

Uniformity issues were usually found in Edge-lit LED TV, due to LGP
outline affected the light propagation. In this study, one novel method
was introduced to quantify the phenomenon of DARK CORNER
MURA. Also, several different LGP conditions were simulated to comeout optimized outline parameters of LGP.
FMCp3 - 3

Solution for Achieving an Optimized LED Spectrum
for LCM
C.-T. Kang, M. C. Chien, Y.-Y. Qiu, Z.-J. Su, H. He
Shenzhen China Star Optoelect. Tech., China

By adjusting LED spectrum, consist of Wd of Blue chip shift andphosphor adjustment to match the confirmed CF & BLU spectrum, toincrease the brightness of LCM. To specific LCM system, by LED chip
red shift, LCM brightness will increase 6% effectively with correct whitechromaticity coordinates.
FMCp3 - 4

Portable LED Illuminating Device for Personal
Photodynamic Treatment and Cell Culturing
C.-J. Ou, Z.-W. Lin, Y.-S. Lin, P.-Y. Lin, J.-Y. Chen,
Y.-K. Tsai
Hsiuping Univ. of S&T, Taiwan

We demonstrate an LED based wearable photodynamic therapy device
that can conduct the designed illuminating energy to a specific tissue
region for targeting reaction. This device is designed based on the 4R
rules. Most important of all, the microdisplay techniques can also
integrate with this medical device.
44

Thursday
FMCp3 - 5

December 4
A Glare Detection for the High-Brightness LED
Display Boards Using a Digital Camera
Y.-H. Siao, P.-J. Wu*, B.-J. Pong**, S.-W. Hsu**,
C.-H. Wen***, C.-Y. Chen
Nat. Yunlin Univ. of S&T, Taiwan*Nat. Chiao Tung Univ., Taiwan**ITRI, Taiwan***Nat. Taiwan Univ. of S&T, Taiwan

This study proposes an easy way to obtain the glare distribution of thearea is full of the high-brightness LED display boards by using a digital
camera. The measurement is modified by the color correction and theuniformity correction and results of this detection are consistent withthe physiological questionnaire.
FMCp3 - 6

The Design of Personal Privacy and Wide Viewing
Functions LCM Model Design
Y. W. Chang
AU Optronics, Taiwan

We successfully develop a new LCM system with privacy and wideview functions. With our design, the users do not have to take off any
components to change the viewing status so that they can keep theprivacy or share the information of the display immediately.
Exhibition Hall B

Poster PHp2: Phosphors for Lighting Application
PHp2 - 1

Study on Luminescence Property of
Ba3(Sc1-XHox)4O9 Phosphors
K. Sugimoto, S. W. Kim, T. Ishigaki, K. Uematsu, K. Toda,
M. SatoNiigata Univ., Japan

Blue light excitable green emitting Ba3(Sc1-xHox)4O9 phosphors weresynthesized in a single phase form by a conventional solid-state
reaction method. These phosphors showed a green emission under theblue light excitation (455 nm) and the main green emission peakobserved at 555 nm corresponding to 4f-4f transition of Ho3+.
PHp2 - 2

The Effect of Sr2-XSi3O2N4: xEu2+ Synthesizing byDifferent Phase Si3N4 on Luminescence
Characteristic
C.-H. Chiang, T.-S. Zhan, S.-Y. Chu
Nat. Cheng Kung Univ., Taiwan

In this paper, the dependence of the raw material of Si3N4 with different
phase on the luminescence of Sr1.9Si3O2N4: 0.1Eu2+ phosphors were
investigated. Itʼs obvious that the emission peak at 530 nm is enhanced
at 450 nm excitation light source by using β-phase Si3N4.

45

LIT

9:00 - 12:00

Thursday
PHp2 - 3

December 4
A Novel Reddish Orange-Emitting BaLa2Si2S8:Eu2+
Thiosilicate Phosphor for White Light-Emitting
Diodes
S.-P. Lee, T.-M. Chen
Nat. Chiao Tung Univ., Taiwan

A novel reddish orange-emitting (Ba1­xEux)La2Si2S8 thiosilicate
phosphor was synthesized and evaluated for potential application inwhite light LEDs. The Eu2+-doped thiosilicate phosphor can be excited
by UV to blue light and shows reddish orange broadband emission. The
preparation, spectroscopic characterization, decay lifetime, and related
LED device data are also presented.
----- Lunch ----13:30 - 16:30

Exhibition Hall B

Poster OLEDp1: OLED Poster
OLEDp1 - 1 Flexible Hybrid White Light Emitting Diodes Basedon Small Molecules and Quantum Dots
W. Wu, F. Li, H. Hu, J. Lin, T. Guo
Fuzhou Univ., China
A ﬂexible hybrid white light emitting diode, in which the QDs acted as
an orange emitter and organic small molecules as the blue emitter in a
multilayered structure was fabricated. The device could produce whitelight emission and the current efficiency has a maximum of 0.97 cd/A.
OLEDp1 - 2 Novel Phosphorescent Host Material for Tunable
Hybrid White OLED Devices
H.-L. Huang, B. Balaganesan, H.-M. Kuo, B.-W. Xie,
T. -C. Chao, M. -R. TsengeRay Optoelect. Tech., Taiwan
The novel phosphorescent host for phosphorescent yellow dopant was
designed and prepared with easy scale-up reaction procedures. The
hybrid WOLED can be tuned from warm white 30 lm/W@(0.42,0.49),
21 lm/W@CIE(0.39,0.45) to cold white 15 lm/W@CIE(0.32,0.39) under
different thickness of the blue layer.
OLEDp1 - 3L Synthesis Yellow and Green Color Iridium(III)Complexes Containing Thieno[3, 2-C]pyridine
Functional Group for Organic Light Emitting Diode.
C. A. Wu, J. S. Lin, M. H. Chang, P. C. Liu, M. R. Tseng
ITRI, Taiwan
Thieno[3, 2-C]pyridine based OLED dopants were successfully
prepared by our research group. These phosphorescent dopants
showed excellent device performances. The yellow and green color
devices revealed the EQE of 21.02, 13.6% and current efficacy of 67.6,
48.8 cd/A and power efficacy of 38.6, 30.6 lm/W at 1000 nits.
46

Thu./Fri.

December 4/5

OLEDp1 - 4L Blue Top-Emissive Organic Light-Emitting Diodes
on Stainless SteelJ. Shin, E. Jung, S. H. Lim, S. M. Cho
Sungkyunkwan Univ., Korea
We have fabricated blue top-emissive organic light-emitting diodes
using stainless steel substrate and investigated the characteristics ofthese OLEDs compared with glass-based OLEDs that have samestructure. The angle dependency of OLEDs on stainless steel was
found much less than that on glass.
OLEDp1 - 5L Highly-Efficient Solution-Processed Yellow Organic
Light-Emitting Diodes
H.-C. Yeh, T.-C. Chao, C.-H. Chou, J.-Y. Liao,
M.-R. Tseng
ITRI, Taiwan
A small molecular yellow iridium complex, PO-08, is prepared andcharacterized. A solution-processed yellow emission OLED using PO08 as dopant exhibits very high performance with a current efficacy of
45.2 cd/A and a power efficacy of 36.7 lm/W at 1,050 cd/m2.
OLEDp1 - 6L The Viewing Angle Dependency of Diffuser Layer on
the Organic Light Emitting Diode with Microcavity
Structure
B. W. Lim, M. C. Suh

LITKyung Hee Univ., Korea
We have developed randomly dispersed nano-scattering films havingnano-hemispherical shapes and nano-concave structures bynanoimprinting or simple spin coating processes. Those films were
utilized as a diffuser layer to obtain desirable emission pattern like
Lambertian distribution.

Friday, December 5
9:00 - 10:25

Room 302 A

PH3: Phosphors for Lighting Application
Chair:
Co-Chair:W. Chen, Univ. of Texas at Arlington, USA
K. Ohmi, Tottori Univ., Japan

PH3 - 1:
9:00

Invited Quantum Rods Optical Film for Backlight
D. Glozman, E. Shaviv, H. Arbell, Y. Bonfil, U. Banin*,
S. Amir
Qlight Nanotech, Israel*Hebrew Univ. of Jerusalem, Israel

Semiconductor quantum rods offer unique opportunities in the field of
displays. Qlight is developing a film for LCD backlight enabling wide
color gamut and the design of an energy-efficient polarized backlight.
Another application being developed is QPixel, novel display
technology based on electric field modulation of the quantum rods
emission.
47

Friday
PH3 - 2
9:25

December 5
Thermal Degradation of Green-Emitting
SrSi2O2N2:Eu2+
C. Wang, R.-J. Xie*, T. Takeda*, T. Suehiro*, N. Hirosaki*
Univ. of S&T of China, China*NIMS, Japan

SrSi2O2N2:Eu2+ is a very promising green phosphor for solid state
lighting, which has a high quantum efficiency and small thermal
quenching. However, this phosphor cannot be practically used because
the degradation of white LEDs using it over time is not acceptable. In
this work, we investigated the thermal degradation and its mechanismof SrSi2O2N2:Eu2+.
PH3 - 3
9:45

Wireless Power Transmission Method of a Powder
EL Sheet Device
K. Wani, T. Kanda, E. Hashimoto
TAZMO, Japan

A thin and ﬂexible EL lighting device was driven by a wireless powersource. There is no other electrical component in the EL lighting unit
except a planar secondary coil, which makes the lighting unit almost as
thin as the EL sheet only.
Also presented in Innovative Demonstration Session (see p. 214)
PH3 - 4
10:05

Studies of Electroluminescence from Individual
Phosphor Particles
J. Silver, P. G. Harris
Brunel Univ., UK

Measurements of the radiance of powder a.c.electroluminescentdevices have in the past been carried out on lamps containing large
numbers of particles. In this work studies of individual ACEL particles
of different sizes and in a variety of environments have been made tounderstand how they behave.
----- Break -----EXHIBITION
12:40 – 18:00 Wednesday, Dec. 3, 2014
10:00 – 18:00 Thursday, Dec. 4, 2014
10:00 – 14:00 Friday, Dec. 5, 2014
Exhibition Hall B
TOKI MESSE Niigata Convention CenterFree admission with your registration name tag
48

Friday

December 5

10:45 - 12:05

Snow Hall B

FMC5: Lighting Technologies
Chair:
Co-Chair:F. Shevlin, Dyoptyca, Ireland
K. Käläntär, Global Optical Solutions, Japan

FMC5 - 1
10:45

Light Guide Plate Illumination with Blue Laser andQuantum Dot Emission
F. Shevlin
DYOPTYKA, Ireland

A Blue laser diode is used to excite emission from a strip of “quantum
dot” materials at the edge of an LCD display light guide plate. Optical
efficiency is improved by reﬂecting emission that would otherwise be
lost. A phase randomizing deformable mirror is used to minimize
speckle noise.
Also presented in Innovative Demonstration Session (see p. 214)
FMC5 - 2
11:05

Design and Perception of an Edge Lit HDR Display
P. Cirkel, L. Penninck
TP Vision, Belgium

FMC5 - 3
11:25

Predicting Color Appearance under Non-Uniform
Lighting Environments
H.-C. Li*, P.-L. Sun*, S.-Y. Chang*, R. Luo*,***Nat. Taiwan Univ. of S&T, Taiwan**Univ. of Leeds, UK

Two psycho-visual experiments were conducted to investigate the color
appearance under non-uniform surround conditions. A weighted
function is derived to estimate the luminance of adapting field for a
CIECAM02 based color appearance model to improve its color
prediction.
FMC5 - 4
11:45

The Design of Anti-Glare Lens Applied to Direct
LED Panel Lighting
J.-W. Pan, Y.-K. Hsu, C.-W. ChiangNat. Chiao Tung Univ., Taiwan

The anti-glare lens had been proposed to reduce the glare effect andenhance the illumination uniformity for indoor lighting. Compared withtraditional panel light with Lambertian intensity distribution, the Unified
Glare Ratio (UGR) had been controlled at 17.3 and the uniformity had
been enhanced 28%.
----- Lunch ----Author Interviews and Demonstrations
16:45 – 17:45
49

LIT

Advances in LED efficiency and thermal conductivity were used todesign an HDR display with an edge-lit backlight. The advantage ofimprovements in thermal conductivity is depending on the backlight
design. An HDR TV set was made, and compared to a wide color
gamut TV in a perception test.

Thursday

December 4

Special Topics of Interest on
Printed Electronics
Thursday, December 4
9:00 - 10:25

Snow Hall B

OLED3: OLED Process Technologies
Chair:
Co-Chair:T. Shimizu, NHK, JapanT. Komatsu, Panasonic, Japan

OLED3 - 1: Invited OLED Device Fabrication by Ink-Jet Printing
9:00
Technology
T. Sonoyama, M. Uchida, T. Sago, S. Watanabe,
K. Ishida, M. Ito, M. Ishida, M. Yamada, Y. Okawa,S. Tanabe, H. Kiguchi
Seiko Epson, Japan
Here we present the result of OLED device fabricated by Ink-jet
method. We use a structure in which Red and Green EML arepatterned by Ink-jet and Blue EML is formed by vapor deposition. We
can make a good emission profile by improving uniformity of HIL and
EML.
OLED3 - 2: Invited Important Technologies of Ink Jet System for
9:25
OLED Display Fabrication
T. Hayashi, K. Oshima, S. Takei*, A. Shimamura,
Y. Konta, S. Tanabe*Tokyo Electron, Japan*Seiko Epson, Japan
We reported the advantages of ink jet printing (IJP) and the important
technologies for MURA/Defect free panel fabrication by IJP. The swathmura caused by IJ head variations, the ink mixed color issue in dry
process and the oval-mura issue in baking process were alreadyresolved by IJP equipment technologies.
OLED3 - 3
9:50

UV-Activated Transparent Desiccant for Practical
OLED Encapsulation Process
H. Katsui, T. Miyasako, T. Arai, M. Takahashi,
N. Onimaru, N. Takamatsu, T. Yamamura, K. Konno,
K. Kuriyama
JSR, Japan

We have developed a new-type desiccant material for practical OLED
encapsulation process. Since a water absorbent function was activatedvia UV irradiation, we could handle the material in atmosphere until justbefore UV-sealing process. Such property would offer processsimplicity and low equipment costs in OLED encapsulation process.

50

Thursday

December 4

OLED3 - 4L Flexible AMOLED Display with Self-Aligned Top
10:10
Gate Oxide TFTs and Novel Barrier Structures
A. Kanegae, E. Kobayashi, Y. Honda, G. Sakamoto,
Y. Isaji, Y. Tsutsui, I. Ueno, T. Ukeda, K. Okada, Y. Izawa,A. Kamitani, T. Mifune, K. Morita
Panasonic, Japan
We have developed ﬂexible AMOLED displays with self-aligned top
gate oxide TFTs and novel barrier structures. Reactive sputteredaluminum oxide is used to lower the resistivity of IGZO. Newly
developed moisture absorption barrier was also integrated. We could
successfully demonstrate the 220-ppi full-color ﬂexible AMOLED display
for the first time.
----- Break ----10:45 - 12:10

Snow Hall B

OLED4: OLED Materials (1)Chair:
Co-Chair:

K. Nakayama, Yamagata Univ., Japan
K. Monzen, Nissan Chem. Inds., Japan

OLED4 - 1: Invited Blue Fluorescent OLEDs for Printed Display
10:45
Applications
E. Böhm, C. Pflumm, H. Heil, S. Meyer, F. Knoch,
L.-I. Rodriguez, B. Burkhart, F. Eckes, K. Stegmaier,
H. Buchholz
Merck KGaA, Germany

OLED4 - 2: Invited Development and Manufacture of Solution11:10
Processed White OLED Lighting Panel
T. Ogata
Mitsubishi Chem. Group S&T Res. Ctr., Japan
High-performance, solution-processable OLED materials have beendeveloped. By the joint development with Pioneer Corporation,
Mitsubishi Chemical Corporation started the mass production andshipment of OLED lighting panels with wet-processed platform andlight emitting layers, which allow to reduce the manufacturing cost thanconventional modules by vapor deposition process.

51

PE

A solution processable host material for ﬂuorescent blue OLEDs ispresented. The contribution of triplet-triplet annihilation and emitterorientation to the external quantum efficiency for different OLEDs isinvestigated. Both effects enhance efficiency for devices manufacturedby thermal evaporation. This is not the case for solution processed
OLEDs.

Thursday
OLED4 - 3
11:35

December 4
The Soluble Hole Injection Materials and the Inks
Applicable to OLED Devices
N. Otani, H. Koga, S. Moriyama, T. Endo, N. Nakaie,
K. Monzen
Nissan Chem. Inds., JapanWe are developing the soluble hole injection materials and the ink,
named ELsource that can be used as hole injection layer in OLED
devices. Optimization of ink formulation applicable to wet coatingprocess and new hole injection material with higher transmittance arereported.
OLED4 - 4L Triplet-Energy Control of PAHs by BN Replacement
11:55
for Development of Ambipolar Host Materials for
PHOLEDs
T. Hatakeyama, T. Ikuta*, S. Hashimoto**, K. Shiren*,
S. Nakatsuka, J. Ni*, M. Nakamura**
Kwansei Gakuin Univ., Japan*JNC PetroChem., Japan**Kyoto Univ., JapanThe triplet-energy control of polycyclic aromatic hydrocarbons (PAHs)
was achieved by replacing the CC unit with a BN unit. The PAH
containing the BN unit, 4b-aza-12b-boradibenzo[g,p]chrysene, showeda large ET value and ambipolar carrier-transport abilities and enable us
to build phosphorescent organic light-emitting diodes of highperformance.
----- Lunch ----13:30 - 15:00

Snow Hall B

FLX3: Advanced Printing Technologies
Chair:
Co-Chair:M. Ito, Toppan Printing, Japan
H. Hirata, Toray Eng., Japan

FLX3 - 1:
13:30

Invited Novel Roll-to-Roll Screen Printing Machine
for Flexible Devices
D. Kobayashi, N. Naoi*, T. Suzuki*, T. Sasaki*,T. Furukawa**
Tokai Shoji, Japan*Tokai Seiki, Japan**Yamagata Univ., Japan

Novel roll-to-roll screen printing machine was developed for printing on
ﬂexible substrates. By this machine, technical problems of theconventional screen printing machines have been solved, such as the
problems of “distortion of the image” and “stability in the condition of
peeling-off of the printing stencil mask from the substrate.”52

Thursday
FLX3 - 2:
13:55

December 4
Invited Technologies for Fully Integrated Printed
Displays
N. Fruehauf, D. Benzel, M. Strecker
Univ. of Stuttgart, Germany

Ultra low cost applications such as packaging demand the use of low
cost technologies, which create previously not addressed challenges,
even if their lower optical performance is acceptable These include low
voltage printed organic thin film transistors, low cost encapsulation
processes and redundant circuit design for printed electronics based
systems.
FLX3 - 3:
14:20

Invited Flexible Transparent Conductive Films Basedon Metal Mesh Technology
Z. CuiChinese Ac. of Sci., China

A new technique for making ﬂexible transparent conductive substrates
based on metal mesh structures is presented. The metal meshstructures are made by embedding silver nanoparticles inks into
imprinted grooves on a ﬂexible transparent substrate. The newtechnology has been successfully implemented in high volume
manufacturing of touch panel sensors for displays.
FLX3 - 4L
14:45

Patterned ITO Film by Roll-to-Roll Process on
Ultra-Thin Glass
T. Furukawa, K. Mitsugi*, S. Akiyama*, H. Itoh**,
D. Kobayashi***, T. Suzuki****, H. Kuroiwa*****,
M. Sakakibara******, K. Tanaka*******, N. Kawamura,
M. KodenPE

Yamagata Univ, Japan*Nippon Elec. Glass, Japan**Teijin, Japan***Tokai Syoji, Japan****Tokai Seiki, Japan*****FEBACS, Japan******DNP, Japan*******Kobe Steel, Japan
We have recently succeeded in patterning ITO film for OLED lighting
on 50-μm ultra-thin glass by ʻRoll-to-Rollʼ process and confirming
luminescence of OLED on the substrate. ʻRoll-to-Rollʼ wet cleaning
equipment, ʻRoll-to-Rollʼ deposition equipment, and the new type ofʻRoll-to-Rollʼ screen printing equipment were used for this study.

53

Thursday

December 4

13:30 - 16:30

Exhibition Hall B

Poster OLEDp2: OLED Poster
OLEDp2 - 1 High-Mobility Solution-Processed Organic FieldEffect Transistors with Channel Length of 5 µm
R. Nakamichi, T. Nagase, T. Kobayashi, Y. Sadamitsu*,
H. Naito
Osaka Pref. Univ., Japan*Nippon Kayaku, Japan

We have fabricated short-channel organic FETs with top-gate
configurations by conventional spin-coating processes. The solutionprocessed organic FETs with a channel length of 5 µm exhibit highfield-effect mobilities of 1 cm2V-1s-1 in both the linear and saturation
regions and show electrically stable operations against gate bias
stress.
OLEDp2 - 2L A Novel Orange Emitter for Solution Processed
White OLEDs
J.-Y. Liao, H.-C. Yeh, T.-C. Chao, J.-S. Lin, M.-R. Tseng
ITRI, Taiwan
A novel orange emitter, PO-10, is studied. The PO-10 dopant performs
ultra-high efficacies of 44.3 lm/W and 45.8 cd/A in NPB host. Twoemitter white devices using PO-10, FIrpic and a tri-host system arealso characterized. Efficacies of 24.8 lm/W and 39.5 cd/A are recorded
at brightness of ca. 2000 nits.
15:15 - 16:45

Snow Hall B

FLX4: Printed TFT Technologies
Chair:
Co-Chair:Y. Uraoka, Nara Inst. of S&T, JapanT. Furukawa, Yamagata Univ., Japan

FLX4 - 1:
15:15

Invited Fully Printed Flexible TFT Array for Electronic
Paper
M. Ito, H. Chujo, K. Murata, M. Nishizawa, N. Ikeda,
K. Hatta, M. Yokoo, R. Matsubara, O. Kina, S. Akao,
M. Takei, M. Kumagai, M. Ishizaki, K. Morosawa,
M. Matsumura
Toppan Printing, Japan

Flexible organic TFT arrays are fabricated by fully printed method forelectronic paper. Taking advantage of ﬂexible feature, electronic paperwith extraordinary laterally elongated shape, whose size is 15 mm by
900 mm is demonstrated. This novel electronic paper can be applied torail-type ESL (Electronic Shelf Label).

54

Thursday
FLX4 - 2:
15:40

December 4
Invited Fully-Printed Organic TFTs and Circuits on
Ultra-Flexible Substrates
K. Fukuda, Y. Takeda, S. Tokito
Yamagata Univ., Japan

In this paper, we report on fully-printed organic thin-film transistor(TFT) devices fabricated on ultra-ﬂexible films in large area with goodelectrical performances. The resulting devices were extremely light andexhibited excellent mechanical stability. The devices remained
operational even under 50% compressive strain, without significant
changes in their performances.
FLX4 - 3
16:05

Flexible Electronics on Backmolded Plastic Foils
P. Gaucci, N. Fruehauf, A. Ilchmann*, B. Polzinger*,W. Eberhardt*, H. Küeck*Univ. of Stuttgart, Germany*HSG-IMAT, Germany

Inkjet-printed organic thin film transistors and unipolar inverters withdifferent combination of channel length and channel width have been
fabricated on plastic foil, which was afterwards implemented for the firsttime on the 3D curved surface of an injection molded plastic object byback-injection molding.
FLX4 - 4L: Invited Automated Continuously-Manufacturing Line
16:25
of All-Printed Organic TFT Array Flexible Film
S. Nishi*,**, T. Kamata**,****JAPERA, Japan**Konica Minolta, Japan***AIST, Japan----- Break ----17:00 - 18:30

Snow Hall A

AMD5: Printed Electronics
Chair:
Co-Chair:Y. Fujisaki, NHK, Japan
H. Minemawari, AIST, Japan

AMD5 - 1:
17:00

Invited High Performance Polymer Semiconductors
A. OhnoMitsubishi Chem., Japan

Solution processable polymer semiconductors whose mobility is up to
23.7 cm2/Vs have been developed. The mobility number opens up a
new ground for applications with mobility more than 10 cm2/Vs range,such as TFTs for OLED and HF(High Frequency) communication.
55

PE

We have constructed a sheet-to-sheet (S2S) manufacturing line inorder to prove the possibility and reality of production technologies andintegrated processes of all-printed electronics devices. We acquired anorganic TFT array on a ﬂexible film of G1 size in a reasonable highyield, whose electrical properties were highly uniform.

Thursday
AMD5 - 2:
17:25

December 4
Invited Flexible Printed Organic TFT Arrays andIntegrated Circuits
S. Tokito
Yamagata Univ., Japan

Newly developed silver nanoparticle ink and organic semiconductormaterials for printed TFT (OTFT) devices have been applied totransistor arrays and exhibited very good electrical performance.
Integrated circuits based on the OTFT devices were also fabricatedusing printing methods. In addition, ultra-thin and ﬂexible circuits weresuccessfully demonstrated.
AMD5 - 3
17:50

Alignment Control of Patterned Organic
Semiconductor Crystals in Short Channel Organic
Thin-Film Transistors
Y. Fujisaki, D. Takahashi*, Y. Nakajima, H. Tsuji,
M. Nakata, T. Yamamoto
NHK, Japan*Tokyo Univ. of Sci., Japan

Patterning deposition of crystalline organic semiconductor film is key
issue to achieve high mobility organic thin-film transistor arrays. We
present a patterning method which can control alignment direction oforganic crystals. The corresponding short channel TFTs showed a highmobility of over 1 cm2/Vs.
AMD5 - 4L: Invited Small Molecule/Polymer Formulations for
18:10
High Performance, High Uniformity Top Gate OTFTs
M. Cowin, C. Watson, J. Carter, K. Crowley, R. Griffiths,
B. Brown
Smartkem, UK
Small molecule/polymer organic semiconductor blends have beenformulated to give transistors with mobilities of >3 cm2/Vs at channel
length of 4 µm. The uniformity of on-current is <10% across a 100 mm
substrate using both curved and linear transistor configurations. The
devices also have excellent bias stress stability.
Author Interviews and Demonstrations
18:30 – 19:30

IDW ’15The 22nd International Display Workshops
December 9 – 11, 2015
Otsu Prince HotelOtsu, Japan
http://www.idw.or.jp
56

Wednesday

December 3

Workshop on
LC Science and Technologies
Wednesday, December 3
14:00 - 15:20

Room 301

LCT1: Fast Switching LCD
Chair:
Co-Chair:M. Ozaki , Osaka Univ., Japan
H. Okada, Univ. of Toyama, Japan

LCT1 - 1:
14:00

Invited Fast Response LCDs by Doping
Nanoparticles and Optical Compensation
S. Kobayashi, Y. Shiraishi, H. Takatsu*
Tokyo Univ. of Sci., Yamaguchi, Japan*DIC, Japan

Response time τoff of NTN-LCD is reduced by 40% at 0 C by doping
nanoparticles of Aerosil 812 (EVONIK) into the host NLC cell and theτoff of optically compensated TB cell is reduced by 50% when their
optical phase difference is π/2-α, where α 1.
LCT1 - 2
14:25

Polymer-Wall Stabilization of Ultra-Short-Pitch
TN-LCDs
M. Akimoto, S. Ando, T. Yamashita, K. Takatoh
Tokyo Univ. of Sci., Yamaguchi, Japan

In this study, we apply the polymer-wall stabilization method to the
Ultra-Short-Pitch TN-LCDs using UV curable LC monomers. By
optimizing the UV irradiation condition, we succeeded in fabricating
stable USP TN-LCDs which keep shorter response time as well as
lower driving voltage and high contrast ratio.
LCT1 - 3
14:45

Fast Switching PSV-FLC Using Low Birefringence
LCs

LCT

T. Fujisawa, Y. Aoki, A. Koiso, I. Nishiyama, H. Takatsu,
S. Kobayashi*
DIC, Japan*Tokyo Univ. of Sci., Yamaguchi, Japan
We have succeeded in the first ferroelectric liquid crystals exhibiting a
0.11 of birefringence with a wide temperature range in SmC* phaseover 100 C. In polymer stabilized V-shaped switching FLCs, a 1:900 ofcontrast ratio is achieved with a fast switching less than 800 μs (Tr+Td).

57

Wednesday
LCT1 - 4L
15:05

December 3
Polymer Stabilized Electrically Suppressed Helix
Ferroelectric Liquid Crystal
L. Shi, Y. Ma, A. K. Srivastava, V. G. Chigrinov,
H. S. Kwok
Hong Kong Univ. of S&T, Hong Kong

A polymer stabilized ferroelectric liquid crystal (FLC) is proposed. With
the expose of UV light, the doped monomer formed a polymer networkand thus stabilize the FLC working in electrically suppressed helix
mode. Therefore, we are able to achieve a high contrast ratio, fast
response and low driving voltage display.
----- Break ----15:45 - 17:10

Room 301

LCT2: Novel Optics for LCD
Chair:
Co-Chair:S. Kobayashi, Tokyo Univ. of Sci., Yamaguchi, Japan
M. Suzuki, Merck, Japan

LCT2 - 1:
15:45

Invited Scattering-Free, Microsecond Electro-Optic
Response Based on Polymer/LC Nanocomposite
M. Ozaki, Y. Inoue*, J. Kobashi, H. Kim, H. Yoshida
Osaka Univ., Japan*Kyoto Univ., Japan

We report a high-speed electro-optic modulation of a polymer/liquidcrystal composite containing nano-sized LC pores inside an anisotropic
polymer matrix. The fast decay response < 20 μs was demonstrated in
the composite film. Only the effective refractive index can be tuned
without disturbing the molecular orientation in the polymerized LC
matrix.
LCT2 - 2
16:10

Stacked LC Micro Lens Array Designed for 2D/3D
Switching on Compound-Eye Camera
M. Ito, Y. Kizu, H. Kwon, Y. Kizaki, K. Suzuki, R. Ueno,
M. Kobayashi, H. Funaki, Y. Nakai
Toshiba, Japan

We have developed a stacked liquid crystal micro lens array (LC MLA)
designed for the compound-eye camera application. The fabricated LC
MLA could switch by voltage driving between compound-eye (3D)
imaging mode to get depth information and 2D imaging mode to gethigh resolution.

58

Wed./Thu.
LCT2 - 3
16:30

December 3/4
Polarizer-Free Imaging of LC Lens Using Reference
Image
C. Cui, R. Bao, S. Yu, X. Gong, M. Ye
SuperD, China

This paper presents an imaging method where focusing is achieved bya liquid crystal (LC) lens of single nematic LC layer without using
polarizer. A simple and efficient image processing method is proposed
to enhance the image contrast and reduce undesired low frequency
components introduced by the non-modulated ordinary wave.
Also presented in Innovative Demonstration Session (see p.212)
LCT2 - 4
16:50

Anisotropic Photoluminescence from an LC-Dye
System
T. Masuda, T. Kamimura, S. Itaya, I. Fujieda
Ritsumeikan Univ., Japan

Photoluminescence of a homogeneously-aligned liquid crystal cell
containing elongated dye molecules is anisotropic. Its spectrum,
intensity and polarization state depend on the orientation of the dyemolecules and the emitting direction. Such a cell with tunable emission
characteristics might find applications in lightings, displays as well as inenergy harvesting.
Author Interviews and Demonstrations
17:15 – 18:15

Thursday, December 4
10:45 - 11:50

Marine Hall

LCT3: Photo Alignment
R. Yamaguchi, Akita Univ., Japan
K. Miyachi, Sharp, Japan

LCT3 - 1:
10:45

Invited Ideal Photoalignment Technology for IPSLCDs

LCT

Chair:
Co-Chair:N. Kunimatsu, H. Sonoda, Y. Hyodo, Y. Tomioka
Japan Display, Japan
An ideal photoalignment technology for IPS-LCDs has been developed
using our original material and process design, which increases
azimuthal anchoring strength, reduces photoirradiation energy, andenables the use of negative LC. We have since realized the practicaluse of this technology and improved the panel specification.

59

Thursday
LCT3 - 2:
11:10

December 4
Invited New Photo-Aligning Materials Having
Cinnamoyl Moieties
H. Hasebe, K. Maruyama, M. Takashima, S. Amano,
F. Kodera, S. Yamamoto, I. Nishiyama, Y. Saito,
Y. Kadomoto, H. Ito, K. Obi, T. Kusumoto, H. Takatsu,
Y. Tani, K. Yamauchi, K. Fujisawa, H.-S. Kwok*,
V. G. Chigrinov*, M. Schadt**
DIC, Japan*Hong Kong Univ. of S&T, Hong Kong**MS High-Tech Consulting, Switzerland

We present two types of novel side-chain photo-polymers withcinnamoyl moieties for photo-alignment of liquid crystal displays(LCDs). The planar aligning materials are highly UV sensitive (315 nm,
150 mJ/cm2). They target in-plane switched (IPS)-LCDs with excellent
AC-image sticking, comparable to brushed polyimides. Correlations
between photo-dimerization and image sticking are discussed.
LCT3 - 3

Withdrawn

LCT3 - 4L
11:35

Grayscale Generation for Optically Rewritable
e-Paper Based on Polarization Rotator
W. Zhang, J. Sun, F. Fan, A. K. Srivastava,
V. G. Chigrinov, H.-S. Kwok
Hong Kong Univ. of S&T, Hong Kong

In this paper, grayscale images for optically rewritable (ORW)
electronic paper are generated by the polarization rotator. The
polarization plane could be rotated from 0 to 90 by applying square
waveform from 4 V to 10 V linearly. This polarization rotator could be
the most important part of printer for ORW.
----- Lunch ----13:30 - 14:50

Marine Hall

LCT4: LC Materials
Chair:
Co-Chair:S. Ishihara, Osaka Inst. of Tech., Japan
H. Hasebe, DIC, Japan

LCT4 - 1:
13:30

Invited High-HTP Macrocyclized Phenyl Cinnamate
Dimer Utilizable as Photo-Responsive Chiral Dopant
for Nematic LCs
J. Watanabe, M. Itoh, K. Marumo, Y. Harada, S. Kang,
K. Sakajiri, M. Tokita
Tokyo Inst. of Tech., Japan

Photo-dimerisation of cyclized phenyl cinnamate dimer with chiralspacer was examined. The rate of dimerization in cyclic dimer was 20
times larger than that in linear one. With this photo-dimerization, cyclic
dimer decreased helical twisting power of cholesteric LC from 30 to 7
μm­1, which is applicable for optical materials.
60

Thursday
LCT4 - 2
13:55

December 4
Photoswitchable Bent and U-Shaped LCs
L. M. Rahman, M. M. Yusoff, S. M. Sarkar, S. Kumar*,
C. Tschierske**
Univ. Malaysia Pahang, Malaysia*Raman Res. Inst., India**Martin-Luther-Univ., Germany

Three series of liquid crystalline compounds comprised of bent-shaped
and U-shaped molecules incorporating azobenzene in side arms andterminal double bonds, were synthesized and characterized. The bentshaped compounds exhibited B6 and B1 phases whereas U-shaped
molecules showed SmA phase. These molecules exhibit strong
photoisomerisation behaviour in solutions and solid state.
LCT4 - 3
14:15

LC Semiconductors Bearing Cyclotetrasiloxane
Rings and Their Ring-Opening Polymerization
M. Funahashi, Y. Funatsu, K. Takenami, K. Seike,A. Sonoda*
Kagawa Univ., Japan*AIST, Japan

In contrast to conventional liquid crystalline semiconductors bearing
linear alkyl chains, we have synthesized π-conjugated liquid crystals
bearing cyclotetrasiloxane rings. Their thin films produced by a spincoating method can be insolubilized by exposure to vapor of
triﬂuoromethanesulfonic acid.
LCT4 - 4L
14:35

Negative Dispersion of Birefringence of Smectic
Liquid Crystal-Polymer Composite Film
H. Lee, J.-H. Lee
Chonbuk Nat. Univ., Korea----- Break -----IDW Best Paper AwardIDW Outstanding
Poster Paper Award
These awards will go to the most outstanding papers
selected from those presented at IDW ’14.
The 2014 award winners will be announced on the
IDW website: http://www.idw.or.jp/award.html
61

LCT

We achieved a negative dispersion of birefringence using selforganized smectic liquid crystal (LC) and polymers. The smectic LC
was used as two dimensional template and the polymers were formed
between the layers of LC. ne was more smoothly decreased than no andthe birefringence was increased with a longer wavelength.

Thursday

December 4

15:15 - 16:35

Marine Hall

LCT5: LC Evaluation
Chair:
Co-Chair:

H. Wakemoto, Japan Display, Japan
M. Inoue, Apple, Japan

LCT5 - 1:
15:15

Invited Azimuth Easy Axis and Anchoring Control of
Rubbed Polymers by LC Mixture
R. Yamaguchi, M. Nishimura, A. Kodate
Akita Univ., JapanAn easy axis of rubbed polymers with aromatic side-chains depends on
LC materials. Two LCs which align parallel and perpendicular to therubbing direction are mixed and the alignment direction is investigated.
An azimuthal anchoring energy is varied by using the LC mixture morethan one order of magnitude.
LCT5 - 2
15:40

A Method to Determine the Degree of Jet Mura for
Curved Display
K. H. Chen, W. F. Sung, W. S. Kao, Y. Cheng
AU Optronics, Taiwan

We propose a method to quantify a kind of mura of curved display,
named as jet mura (JM) caused by bending stress, via converting thebending offset of up and low glass substrates to an index. Throughdeveloping index, more precise definition and further control of JM will
be achieved.
LCT5 - 3
16:00

Premeditate Display Quality of FFS-LCD Using
Negative LC by DC Stress
Y. Tang, H. Cui, J. Liu, X. Jiang, P. Liao, C. Yu
InfoVision Optoelect., China

We compare the concentration of impure ion, and the contact matchcharacter of different materials in different FFS-LCD using negative LC
by analyzing the change of brightness and image quality when DC
voltage is applied to the data signal.
LCT5 - 4L
16:20

Tilted Dipole Model for an LC-Dye System
I. Fujieda
Ritsumeikan Univ., Japan

A model is proposed to understand anisotropic photoluminescencefrom an LC-Dye system. Its LC layer is divided into sub-layers
containing electric dipoles with specific tilt angles. Radiation patternfrom each sub-layer is weighted by the power absorbed and added
together. A simplified model is applied for our latest experiment.
Author Interviews and Demonstrations
18:30 – 19:30

62

Friday

December 5
Friday, December 5

9:00 - 12:00

Exhibition Hall B

Poster LCTp1: Fast Switching LCD
LCTp1 - 1

Electro-Optic Response of a Chiral Nematic LC with
Low Dielectric Anisotropy
I. Onodera, M. Kimura
Nagaoka Univ. of Tech., JapanThe change of the transmittance and the electro-optic response of achiral nematic liquid crystal mixture with positive dielectric anisotropy in
Uniform Standing Helix (USH) configuration are investigated. Relatively
high response of 80% is observed. However, the texture was found to
be unstable, and was easily broken applied voltage.
LCTp1 - 2

Enhanced Optical Response in Homogeneously
Aligned LC Cells via He-Ne Laser Holographic
Exposure
C.-Y. Chien, C.-R. Sheu
Nat. Cheng Kung Univ., Taiwan

We use a way of holographic exposure via a He-Ne laser to process
homogeneously aligned liquid crystals (LCs) cells. As a result, thepossibly expected film-like horizontally polymer network is generated toenhance optical response of LC cells. Experimental results aredemonstrated and discussed.
LCTp1 - 3

Effect of Polymer Wall Formation on Stability andElectro-Optical Properties of Reverse TN-LCDs
M. Akimoto, K. Nagao, K. Takatoh
Tokyo Univ. of Sci., Yamaguchi, Japan

LCTp1 - 4L

Sub-Millisecond Switching of a Nematic Liquid
Crystal Cell Aided by a Vertical Bias Field
Y.-J. Park, J.-W. Kim, T.-H. Choi, T.-H. Yoon
Pusan Nat. Univ., Korea

We propose a method for sub-millisecond response time in a LC cellusing a vertical bias electric field. While the vertical bias electric field isapplied for the dark state, an in-plane electric field is applied for thebright state.

63

LCT

Here we show the basic properties of polymer-wall stabilized RTN-LCD
whose retention time exceeds over a month and a half and it shows nodegradation. The polymer-wall stabilized RTN-LCD achieves the great
reduction of driving voltage, while its response time gets slower after
polymer-wall formation.

Friday
LCTp1 - 5L

December 5
Fast Switching Alignment-Controlled PolymerDispersed LCs for Local Dimming Backlight
E. Uchida, T. Ishinabe, H. Fujikake
Tohoku Univ., Japan

We have proposed a novel local dimming backlight system usingalignment-controlled PDLC to improve contrast ratio and power
consumption of LCDs. We clarified that bifunctional LC monomer andhigh refractive index nematic LC material were effective to achieve the
PDLC cell with fast response speed and high light diffusion efficiency.
9:00 - 12:00

Exhibition Hall B

Poster LCTp2: LC Application
LCTp2 - 1

The See-Through Screen Based on a PolarizationDependent LC Device
W.-K. Lin, W.-C. Su
Nat. Changhua Univ. of Education, Taiwan

A polarization-dependent diffuser based on liquid-crystals is fabricatedas a projection screen. For a specific linear polarized light, it is adiffuser screen. For the other orthogonal polarization, the screen
becomes transparent. Therefore, a see-through screen but with diffuser
function is presented.
LCTp2 - 2

Evaluation of Resolving Capabilities at Different
Incident Angles of an Imaging System with LC Lens
R. Bao, C. Cui, S. Yu, X. Gong, M. Ye
SuperD, China

The distributions of modulation transfer function along two orthogonal
directions in the object plane for an imaging system with a liquid crystal
lens are measured. The MTF50 remains almost constant across theincident angle of 26 along the rubbing direction, and 36 along thedirection perpendicular to the rubbing direction.
LCTp2 - 3

LC Tuning Slow Light Photonic Crystal WaveguideG.-H. Li, F.-L. Hsiao
Nat. Changhua Univ. of Education, Taiwan

We demonstrate a tunable 1D PhC nanobeam with infiltrated nematic
liquid crystals. The band structure and group velocity can be tuned bychanging applied voltage to modify the direction of LC molecules. A
large tuning range of about 49 nm at a low operating voltage of 10 V isachieved.

64Friday
LCTp2 - 4

December 5Surface Morphology Investigation of UV-Glue
Composition in PDLC Films
C.-T. Su, C.-S. Hsieh, J.-T. Lien
Chunghwa Picture Tubes, Taiwan

In this paper, comparing the variation of surface morphology of polymer
dispersed liquid crystal (PDLC) was included. Our results demonstrate
an interesting from variation of droplet feature and reveal that thecontrast ratio can be increased and decreased the driving voltage byheating, which reveal a great potential property.
LCTp2 - 5

Features of the Optical Response and Relaxation of
the Nematic LC Doped with CdSe/ZnS Quantum
Dots
E. Konshina, I. Galin, D. Shcherbinin, E. Gavrish
ITMO Univ., Russia

This study is devoted to the dynamics of electro-optical response andrelaxation time of LC cells with nematic LC doped with CdSe/ZnS
semiconductor quantum dots (QDs) and homogeneously oriented byrubbed polyimide. The inﬂuence of the nanoparticle concentration as
well as the parameters of alternating electric field has been studied.
LCTp2 - 6

A New Low-Power and High Aperture Ratio for HighResolution Mobile TN Panels
W. Q. Song, Y. C. Chang, D. L. Fu, J. F. Wu
InfoVision Optoelect., China

In this paper, we propose a new twisted nematic (TN) pixel structure forhigh PPI. Compared with the original SUD I structure, aperture ratio(AR) of the new structure can be increased by 43%. At the same time,
power consumption of the new structure can be decreased by 23.3%.
LCTp2 - 7

Study on Improving the Image Quality Using Single
Compensation Film
B. Hai, C.-T. KangIn this article, we study how to improve the image quality using single
compensation film on our PS-VA cell, and we will provide somemeasured data and pictures to prove our idea.
LCTp2 - 8L

Excitation Energy for the Laser Emission in a
Well-Aligned Liquid Crystalline Blue Phase II
K.-B. Kim, S.-W. Choi
Kyung Hee Univ., Korea

A well-aligned Blue Phase II (BPII) with mono-platelet domains is
produced and it is found that the excitation energy of the laser emission
can be drastically reduced.

65

LCT

Shenzhen China Star Optoelect. Tech., China

Friday
LCTp2 - 9L

December 5
Fabrication and Evaluation of Flexible Blue PhaseLC Devices with Polymer Walls
H. Sakai, T. Ishinabe, H. Fujikake
Tohoku Univ., JapanTo develop the ﬂexible liquid crystal display with wide viewing angle
range and high contrast ratio, we proposed a blue phase liquid crystal
device with polymer walls. We clarified that polymer walls can suppress
a distortion of alignment of the blue phase liquid crystal layer in abending state.
LCTp2 - 10L Liquid Crystal Molecular Orientation State ofMicropatterned Twisted Nematic Liquid Crystal
Cells: A Computer Simulation Investigation
M. Honma, K. Takahashi*, R. Yamaguchi*, T. Nose
Akita Pref. Univ., Japan*Akita Univ., Japan
We investigate the voltage-dependent liquid crystal molecularorientation state in micropatterned twisted nematic liquid crystal (LC)cells using a computer simulation. Particularly, we discuss the voltagedependent bulk LC directors for different micropattern periods. It isrevealed that the driving voltage greatly decreases as the micropatternperiod decreases.
LCTp2 - 11L New Electrode Structure of FFS Mode for Blocking
of Electrostatics
J. H. Kim, D. H. Kim, T. H. Kim, H. S. Choi, S. Kundu,
Y. J. Lim, S. H. Lee
Chonbuk Nat. Univ., Korea
In the FFS mode, ITO coating is required in a backside of top glass
substrate in order to prevent electrostatics because the top substrate ispurely insulator, which results in troublesome during glass etching to
make displays thinner and lighter. To resolve the issue, we proposed an
new FFS which has an electrode on inner top substrate, which makes
glass etching easier for lightweight and thinness.
LCTp2 - 12L An Extra Photoresist Film Fabricated in Liquid
Crystal Lens Array to Prevent Occurrence ofDisclination Lines
C.-S. He, P.-H. Tang, W.-Y. Lu, Y.-T. Yang, C.-H. Lin,
C.-R. Sheu
Nat. Cheng Kung Univ., Taiwan
A proposed method used to prevent the disclination line occurrence inliquid crystal lens array, which is usage of an extra non-patterned or
patterned SU8 photoresist films coated on surfaces of patterned ITO
films in lens structures. As a result, the problem of disclination line
occurrence is effectively prevented.

66Friday

December 5

LCTp2 - 13L Light Shutter Using Dye-Doped Polymer-Networked
Liquid Crystals with Crossed Patterned Electrodes
J. Heo, J.-W. Huh, B.-H. Yu, T.-H. Yoon
Pusan Nat. Univ., Korea
We propose an initially transparent light shutter using dye-doped
polymer-networked liquid crystals with crossed patterned electrodes.
This device, which is switchable between the transparent and opaquestates, shows fast response time and low operation voltage. We expectthat the proposed light shutter can increase the visibility of atransparent display.
LCTp2 - 14L Memory Characteristics of LC Orientation Assisted
by Polymer Filaments Spun by Electrospinning
Method - Application for Quasi-VA Bistable LCDs
with Nn-LC S. Dohi, T. Terasawa, Y. Kudoh, T. Takahashi
Kogakuin Univ., Japan
A bistable nematic LCD with Δε<0 has been investigated. The S90(quasi-vertical alignment) and the AS270 states were used. However,
the memory characteristic was poor in the AS270 state. Then, polymer
filaments spun by electrospinning were attempted to use to improve theholding condition in the AS270 state.
LCTp2 - 15L Molecular Orientation and Phase Shift Properties ofMicrostrip-Line-Type LC Phase Shifter Combinedwith n-Type LC Materials
M. Nagasawa, T. Komuro, T. Sasamori, Y. Isota,
T. Watanabe*, K. Ito*, R. Ito, M. Honma, T. Nose
Akita Pref. Univ., Japan*Yurikogyo, Japan

LCTp2 - 16L Modified Microscopic Structure and Its LC
Molecular Orientation Effects in the Stretched
Porous PMMA Films
S. Ohno, N. Toshima, R. Ito, M. Honma, T. Nose
Akita Pref. Univ., Japan
Porous PMMA materials can easily be obtained by using ethanol/water
solution. They provide ease in fabrication of bulky LC layer, which isadvantageous for MMW and/or THz application. Modification effect of
microscopic porous structure by film stretching is investigated to
introduce some anisotropic molecular orientation effect.

67

LCT

Planar-type millimeter-wave (MMW) LC phase shifter is designed
based on the microstrip-line (MSL). LC layer, which acts as a tunable
material, can be easily introduced on the MSL by the novel structure.
This paper reports basic performance of the MSL-type phase shifter
combined with negative type (n-type) LC materials.

Friday

December 5

LCTp2 - 17L Single Crystal Growth of Soluble Organic
Semiconductor Controlled by Liquid Crystal
Solvents under Electric Field
T. Matsuzaki, T. Ishinabe, H. Fujikake
Tohoku Univ., Japan
To increase the mobility of organic semiconductors, it is necessary toform a single crystal whose crystal orientation is controlled uniformly. In
this paper, orientation control of single crystal of the organic
semiconductors in a liquid crystal solvent was reported, where theliquid crystal were aligned by electric ﬁeld.
9:00 - 12:00

Exhibition Hall B

Poster LCTp3: Photo Alignment
LCTp3 - 1

Multi-Domain IPS LC Cell Using the Photo
Alignment Method
B.-J. Mun, K.-W. Park, G.-D. Lee
Dong-A Univ., Korea

We proposed the photo-aligned multi-domain IPS mode by double
exposing the UV light to achieve both the high brightness and wideviewing angle properties. Also, the optical performance of the proposed
IPS cell is demonstrated from the experiments in this paper.
LCTp3 - 2

Localized Cell Parameter Comparison of Photo
Alignment and Rubbing Type in FFS-LCD
K.-T. Huang, Y.-W. Hung, Y.-T. Chao, T. Lee, R.-X. Fang,
C. Lee, S.-C. Lin, C. Kuo, T.-S. Jen
HannStar Display, Taiwan

Fringe-Field Switch (FFS) mode LCD have been widely used in
portable device due to its excellent performance of display. In order toimprove the image quality of panel, photo alignment technology is
being applied to FFS mode LC panel. In this paper, the cell parameters
have been compared.
LCTp3 - 3

Fast Switchable Ferroelectric LC Grating andAnalysis for the Parameters
Y. Ma, L. Shi, A. K. Srivastava, V. G. Chigrinov,
H. S. Kwok
Hong Kong Univ. of S&T, Hong Kong

A method for the fabrication Ferroelectric liquid crystal switchable
grating based on photo-alignment technique has been proposed. The
ﬁrst order diffraction efﬁciency is 65% and response time is 69 μs at
the electric ﬁeld of 1.33 V/μm. Theoretical calculation is given anddifferent FLC parametersʼ effects on the efﬁciency are analysis.

68Friday
LCTp3 - 4L

December 5
Rubbing Method for Liquid Crystal Alignment with
Zero Pretilt
J.-H. Park, S.-W. Oh, T.-H. Yoon
Pusan Nat. Univ., Korea

We propose a negative liquid crystal (LC) alignment method for zeropretilt angle using polyimide (PI) mixed with the reactive mesogen(RM). Zero pretilt angle can be obtained by UV curing of RM
monomers under an applied vertical electric field before rubbing of PI.
9:00 - 12:00

Exhibition Hall B

Poster LCTp4: LC Materials
LCTp4 - 1

Modeling of LC/Dendrimer Mixtures by Using Hard
Repulsive Molecules
T. Koda, M. Uchida, A. Nishioka, O. Haba, K. Yonetake,M. Kwak*, Y. Momoi*, N. Kim*, S. Hong*, D. Kang*,
Y. Choi*
Yamagata Univ., Japan*LG Display, Korea

We propose model systems for molecular simulation to discussbehaviors of alignment of liquid crystal molecules with dendrimers on
substrates. We used hard cylinders for liquid crystal molecules andhard spheres for dendrimers. Results showed both cases ofhomeotropic alignment and homogeneous alignment depending on
simulation condition and procedure.
LCTp4 - 2

Withdrawn

LCTp4 - 3

Pretilt Angle Control of LC on Doping Silica
Nanoparticles and Reactive Monomers
C.-J. Hsu, C.-C. Kuo, C.-D. Hsieh, C.-Y. Huang
Nat. Changhua Univ. of Education, Taiwan

LCTp4 - 4L

Effects of Polymer-Stabilization on Electro-Optical
Properties in an Amorphous Blue Phase III
T. Hirose*,**, A. Yoshizawa**Hirosaki Univ., Japan**Tohoku Chem., Japan

We prepared a blue phase III mixture consisting of a nematic liquid
crystal and a chiral dopant. The BPIII structure was stabilized in a wide
temperature range more than 50 K by a polymer network. We
demonstrated fast response and hysteresis-free switching in thepolymer-stabilized BPIII at room temperature.
69

LCT

The pretilt angle of liquid crystals (LCs) is controlled by simultaneously
doping silica nanoparticles (SNs) and reactive monomers into the LC
cell. In the co-doping system, the pretilt angle of LCs is effectively
controlled in a wide range without markedly increasing response timeof the cells.

Friday

December 5

9:00 - 12:00

Exhibition Hall B

Poster LCTp5: LC Evaluation
LCTp5 - 1

Analysis on Flexoelectric Effect in AH-IPS LC Mode
under Low Frame Rate Driving Using a High Speed
CameraD.-J. Lee*,**, G.-Y. Shim**, S.-H. Yoo**, J.-H. Lee*,
J.-H. Baek*, H. Choi*, Y. M. Ha*, H.-R. Kim***LG Display, Korea**Kyungpook Nat. Univ., Korea

We investigated the ﬂicker behavior of advanced high performance inplane switching mode with positive dielectric LC and negative dielectric
LC under low frame rate operating. For the precise analysis onbrightness distribution change between positive and negative frame,
we used a high speed camera and analyzed the positional brightness
variation.
LCTp5 - 2

Proposal of Measuring the Difference in
Flexoelectric Coefficient of a TN-LC Cell by
Transmission Ellipsometry
Z. A. B. Filzah, H. Matsumoto, M. Kimura, T. Akahane
Nagaoka Univ. of Tech., Japan

A technique on how to measure the difference values of Splay andBend ﬂexoelectric coefficient in nematic liquid crystal (LC) is proposed.
In this proposal, the effect of several parameters for twisted nematic(TN) cell with in-plane electric field will be presented.
LCTp5 - 3

Analysis of the Vertical Crosstalk of Advanced
Super Dimension Switch Mode TFT-LCD
S. Wang, J. Li, S. Q. Huang, W. Xue, Y. J. Wang, Y. Shi,
Q. Y. Guo, K. H. Park, Y. B. Lee, C. C. Che, D. Chen,
S. K. Lee
Hefei BOE Optoelect. Tech., China

This paper introduced the vertical crosstalk of ADS (Advanced Super
Dimension Switch) mode TFT-LCD. Ioff and Cpd have been studied.
The results indicated that decreasing the distance of active exceed
gate could improve Ioff, and increasing the distance of pixel ITO andcommon ITO to data line could decrease Cpd.
LCTp5 - 4

Measurement for Sum of Flexoelectric Coefficientsfor Nematic LCs by Using Capacitance
Characteristics under Applying the DC Voltage
S. Nakamura, Y. Kudoh, T. Takahashi
Kogakuin Univ., Japan

The ﬂexo-coefficients (e11+e33) was attempted to determine by thecapacitance characteristics against applying the dc voltage to the HAN
cell. Furthermore, the chromatographic isolation phenomenon wasused to avoid the inﬂuence of impurity ions, when the LC material was
injected into the cell by capillary action.
70

Friday

December 5

LCTp5 - 5L

Basic Performance of the Birefringence
Measurement System Using ±45° TNLC
T. Takeuchi, M. Honma, R. Ito, N. Fuzita, K. Okano,J. Murata, H. Muraguchi, N. Ozaki, T. Nose
Akita Pref. Univ., Japan

Precision birefringence measurement system have been proposed witha combination of the rotary-analyzer method and the rotary-phaseplate method. However, they require some mechanical rotation devices.
In this study, birefringence measurement system without any
mechanical movements is investigated by replacing the mechanicalrotation components to the TNLC cells.

The 50th Anniversary Speech of PDPs

“Summing Up of the PDP History
and a Peek at Plasma
Technologies Beyond Displays”(FED4 – 1)
Friday, December 5, 2014
15:15 - 15:55
Room 302B
See page 118 for detail
LCT

Evening Get-Together
with Wine
Tuesday, December 2, 2014
18:00 – 20:00
Observation Deck (31F),
Hotel Nikko Niigata(Sponsored by Merck Ltd., Japan)
See page 12 for details
71

Wednesday

December 3

Workshop on Active Matrix Displays
Wednesday, December 3
14:00 - 17:00

Exhibition Hall B

Poster AMDp1: Oxide TFT
Special Topics of Interest on Oxide-Semiconductor TFT
AMDp1 - 1

Withdrawn

AMDp1 - 2

A 31-in. FHD AMOLED TV Driven by Amorphous
IGZO TFTs
H.-J. Zhang, C.-Y. Su, W.-H. Li, L.-Q. Shi, X.-W. Lv,
Y.-T. Hu, C.-Y. Tseng, Y.-F. Wang, C.-C. Lo
Shenzhen China Star Optoelect. Tech., China

A 31-in. FHD (1920x1080) AMOLED TV was developed with a-IGZO
backplane. The IGZO (1:1:1:4) AC sputtering system was applied tofabricate ESL type a-IGZO TFTs at Gen 4.5 glass substrate. TFTs withdifferent a-IGZO etch stopper layers were also studied to realize
excellent TFT characteristics and reliability under gate bias-stress.
AMDp1 - 3

5.8-in. Indium Gallium Zinc Oxide TFT LCD with Slim
Border
E.-C. Liu, Y.-H. Chen, S.-C. Chiang, Y.-J. Lu, Y.-Y. Huang
Chunghwa Picture Tubes, Taiwan

In this study, 5.8-in. indium gallium zinc oxide TFT LCDs were
fabricated with slim border. The slim border used by 7T2C gate-driverin panel. Due to the high mobility, the GIP circuit designed to be lower
than 1 mm in 5.8-in. indium gallium zinc oxide TFT LCDs was also
demonstrated.
AMDp1 - 4

Investigation of Hysteresis in Dual-Gate a-IGZO
TFTs
Y.-H. Kim, J. G. Um, S. Lee, M. Mativenga, J. Jang
Kyung Hee Univ., Korea

Hysteresis in dual-gate a-IGZO TFTs was investigated. The top-gate
was swept in forward and reverse modes, while the bottom-gate wasbiased negatively, grounded or biased positively. The hysteresis wasfound to be largest when the bottom-gate was biased positively –consistent with electron trapping into the top gate-insulator.

72

Wednesday
AMDp1 - 5

December 3
CVD-Free and Low Temperature Amorphous
InGaZnO TFTs for Flexible Display Applications
W.-T. Lin, C.-C. Cheng, C.-Y. Liu, M.-F. Chiang
AU Optronics, Taiwan

AMDp1 - 6

Investigation for the Time-Dependent
Characteristics of Sol-Gel Processed Zinc-Tin-Oxide(ZTO) Transistors
Y. W. Wang, C. M. Jian, H. H. Wang, W. L. Liu
Nat. Chang Hua Univ. of Education, Taiwan

We report the effect of time-dependent characteristics variation of solgel zinc-tin-oxide (ZTO) transistors. The sol-gel ZTO transistor could
achieve a maximum field effect mobility of 2.7 cm2/Vs, on/off ratio over
105 and a sharpest sub-threshold slope of 0.9 V/decade. The devices
have a trend to perform better as time passing.
AMDp1 - 7

Electrical Characteristics and Stability of Bottom
Gate a-InGaZnO TFTs with Different Geometric
Structures
H.-W. Li, C.-P. Chang, H.-H. Lu
AU Optronics, Taiwan

The bottom gate a-IGZO TFTs with difference geometric structures
were investigated. The effective channel length is mainly related to thesource/drain space not the island layer length. With increasing theeffective channel length, the stability of the a-IGZO TFTs could begreatly improved without degradation of the electrical characteristics.
AMDp1 - 8

Hysteresis Improvements by Introducing a DoubleActive-Layered Structure in a-InGaZnO TFTs
Y.-C. Tsai, F.-J. Chan, P.-T. Liu, H.-P. D.-D. ShiehNat. Chiao Tung Univ., Taiwan

a-IGO/a-IGZO TFTs exhibited S.S of 0.4 V/decade and hysteresis of0.40 V, whereas a-IGZO TFTs showed S.S of 0.93 V/decade andhysteresis of 1.35 V. A smoother surface roughness of 0.25 nm in
a-IGZO film was obtained by a double-active-layered structure with
a-IGO/a-IGZO. a-IGO/a-IGZO TFTs also presented less charge
trapping under NBIS stressing.

73

AMD

A low temperature (< 220 C) process ﬂow without plasma enhanced
chemical vapor deposition (PECVD) of preparing a-IGZO TFTs ispresented. All the inorganic dielectrics have been replaced to theorganic materials by the coating process, and the CVD-Free a-IGZO
TFTs also show the excellent stability under the gate bias stresses.

Wednesday
AMDp1 - 9

December 3
Self Heating Induced Hole Trapping at Back-Channel
Edge of Flexible a-InGaZnO TFTs under Gate andDrain Bias Stress
G. Li*, B.-R. Yang*,**, Y.-C. Tsai***, R. Zhan*, C.-Y. Su****,
C.-Y. Lee****, C.-Y. Tseng****, C.-C. Lo****, A. Lien*****,
S. Deng*, N. Xu*, H.-P. D.-D. Shieh**,****Nat. Sun Yat-Sen Univ., China**SYSU-CMU Shunde Int. Joint Res. Inst., China***Nat. Chiao Tung Univ., Taiwan****Shenzhen China Star Optoelect. Tech., China*****TCL Corporate Res., China

Self heating enhanced positive Vth shift in a-IGZO TFTs has been
widely reported. In this paper, the authors further observed humpformation during positive Vth shift. This hump is speculated to result
from the combination effect of self heating induced hole trapping andedge effect.
AMDp1 - 10 Enhancement of Performance and Storage Stabilityof Thin-Film Transistor with InZnSnO/InGaZnO
Bilayer Stack Channel Layers
X.-Y. Yeh, C.-S. Fuh, P.-T. Liu, C.-H. Chang, C.-C. Chang,
Y.-C. TsaiNat. Chiao Tung Univ., Taiwan
We investigated on electrical performance and storage issues of highefficiency amorphous In-Zn-Sn-O (IZTO) thin film transistor. By capping
additional In-Zn-Sn-O (IGZO) layer on IZTO to form the bilayer channel.
The threshold voltage and substrate swing were improved
proportionally with the thickness of IGZO capping layer.
AMDp1 - 11 Effects of Negative-Gate-Bias with Illumination
Stress on the Hysteresis in the Transfer Curve of
a-IGZO TFT Measured by the New Sampling Method
Y.-J. Chen, Z.-H. Cai, Y.-H. Tai, C.-Y. Chang, C.-J. Li*,
Y.-H. Yeh*Nat. Chiao Tung Univ., Taiwan*ITRI, Taiwan
In the study, the hysteresis in the transfer curve of a-IGZO TFTs withbias stress and illumination is analyzed. The threshold voltage
difference between the two curves in the hysteresis keeps the same,even the threshold voltages shift severely with stress time. The
difference increases with the light intensity.
AMDp1 - 12 Withdrawn

74

Wednesday

December 3

AMDp1 - 13 Reduction of Hysteresis in Transfer Characteristics
of Solution Processed IZTO TFT by Plasma
Treatment
T.-H. Kim, C. Avis, H.-R. Hwang, J. Jang
Kyung Hee Univ., Korea

AMDp1 - 14 Effect of Solution Processed AlOX Passivation on
Back Channel Etch a-IGZO TFTs
S. An, M. Mativenga, X. Lee, J. Jang
Kyung Hee Univ., Korea
The back surface of amorphous-indium-gallium-zinc-oxide (a-IGZO)
thin-film transistors (TFTs) with a back-channel-etched (BCE) structure
was treated with a solution-processed aluminum oxide (AlOX)
passivation layer. The result was a chemical reaction between the AlOX
solution and the a-IGZO at the back surface, which significantly
improved the stability of the BCE TFTs.
AMDp1 - 15 Impact of Negative Bias and Illumination Stress on
Channel Resistance of Back Channel Etched a-IGZO
TFTs
M. Chun, J. Um, M. Mativenga, J. Jang
Kyung Hee Univ., Korea
The impact of negative-bias-illumination-stress (NBIS) on the channel
resistance (RCH) and series resistance (RSD) of back-channel-etched(BCE) amorphous-indium–gallium–zinc-oxide (a-IGZO) thin-film
transistors (TFTs) is investigated. It is found that while the RCH
decreases, RSD increases with increasing NBIS time, indicating defectcreation under source/drain electrodes.
AMDp1 - 16L Printability of Screen Printed Silver for Oxide
Thin-Film Transistor toward a Printable Device
S. Urakawa, Y. Ishikawa, Y. Osada, M. N. Fujii, M. Horita,
Y. Uraoka
Nara Inst. of S&T, Japan
Oxide semiconductor has superior properties more than organic
semiconductor, which is one of the printable materials for all printed
devices. To realize it an oxide thin-film transistor was fabricated bysolution process. Amorphous InZnO was formed by spin-coating
method and Silver as electrode was printed by screen print method.

75

AMD

We fabricated solution-processed IZTO TFT with zirconium doped AlOx
(ZAO) as the gate insulator. Plasma treatment on ZAO improves TFTsʼ
performances as follows: μsat, Vth, S.S. and hysteresis varied from 4.6 to
45.1 cm2/Vs, 0.8 to 0.2 V, 268 to 81 mV/dec., and 1.2 V to 0.4 V,
respectively.

Wednesday

December 3

AMDp1 - 17L Stable Electrical Characteristics of Solution
Processed Amorphous InZnO Thin-Film Transistors
with Organic Passivation Layers
J. Okada, T. Nagase, T. Kobayashi, H. Naito
Osaka Pref. Univ., Japan
Solution-processed organic passivation layers for amorphous InZnO
thin-film transistors (TFTs) have been shown. Solution-processed
amorphous InZnO TFTs with the organic passivation layers exhibit
good electrical stability of the threshold voltage shift of less than 1.9 V
after bias stress time of 10000 s.
AMDp1 - 18L ITO Interlayer to Improve the Electrical Performanceof HfInZnO-TFTs
J. Li, J.-H. Zhang, H. Zhang, X.-Y. Jiang, Z.-L. Zhang
Shanghai Univ., China
We have fabricated hafnium-indium-zinc-oxide (HfInZnO) thin filmtransistors (TFT) with indium-tin-oxide (ITO) interlayer. Compared withconventional HfInZnO-TFT, the electrical performance and bias stabilityof HfInZnO-TFTs with ITO interlayer are improved. The performanceenhancement is attributed to a decrease in interface trap state and anincrease in carrier concentration.
14:00 - 17:00

Exhibition Hall B

Poster AMDp2: Active-Matrix Devices
AMDp2 - 1

Withdrawn

AMDp2 - 2

Driving Circuit of Fast Current Programming andLeakage Current Compensation for External
Compensation on AMOLED Panel
C.-C. Chen, K.-Y. Lee, H.-S. Lin, L.-H. Chang, Y.-H. Lin
AU Optronics, Taiwan

To improve current charge time and leakage current issues on
AMOLED panel, a driving circuit is proposed in this study. By operating
this circuit, sensing speed and compensated accuracy can further be
improved when utilizing external algorithm to compensate large-sized
AMOLED panel.

76

Wednesday
AMDp2 - 3

December 3Compensation Circuit for Active Matrix Organic
Light Emitting Diode with Organic Thin-Film
Transistors
G.-T. Zheng, P.-T. Liu*, R.-J. Chen*, C.-Y. Tsai*,
H.-H. Hsieh**

This work presents pixel circuit using organic thin-film transistors. The
simulation results show that the current change rate is less than 2%with 6 V threshold voltage variation of driving TFT by using scansignals as the majority signals to decrease the cost of ICs.
AMDp2 - 4

Simple Pixel Circuit Using LTPS TFTs with Mirror
Compensation for AMOLED Displays
P.-S. Chen, Y.-T. Liu, F.-H. Chen, C.-L. Lin
Nat. Cheng Kung Univ., Taiwan

This work presents a new pixel circuit using low-temperaturepolycrystalline-silicon (LTPS) thin-film transistors (TFTs) for activematrix organic light-emitting diode (AMOLED) displays. The proposed
circuit can effectively compensate for the threshold voltage variation of
TFTs and power line I-R drop by a simple mirror structure.
AMDp2 - 5

New AMOLED Pixel Circuit to Compensate for VTH
Variation with an Eliminated VDD Line
Y.-T. Liu, P.-S. Chen, P.-S. Shieh, C.-L. Lin
Nat. Cheng Kung Univ., Taiwan

A new pixel circuit for active-matrix organic light-emitting diode ispresented. The circuit utilizes a scan line as VDD line to gain aperture
ratio. The simulation results of this work demonstrate that the circuit
has good immunity against VTH variation of driving TFT and resolutionof displays.
AMDp2 - 6

Circuit of Gate Driver on Array with Direct Threshold
Voltage Compensation for the Pull-Down Transistors
Z.-H. Cai, Y.-J. Chen, Y.-H. Tai, C.-Y. Chang, C.-L. Wu*,
Y.-H. Yeh*Nat. Chiao Tung Univ., Taiwan*ITRI, Taiwan

A highly reliable circuit of gate driver on array with compensation forthe pull-down transistors has been developed. The proposed circuit
uses capacitance to store the threshold voltage of TFT and use it forcompensation. Even with threshold voltage shift, its capability of pulling
down the scan-bus can be kept.

77

AMD

Nat. Tsing Hua Univ., Taiwan*Nat. Chiao Tung Univ., Taiwan**Polyera Taiwan, Taiwan

Wednesday
AMDp2 - 7

December 3
Design of High Reliable and Self-Healing Integrated
Gate Driving Circuit Applied for Amorphous Silicon
TFT-LCDs
C. Dai, C.-Y. Lee, T.-C. Lai, C.-C. Lo, A. Lien*
Shenzhen China Star Optoelect. Tech., China*TCL Corporate Res., China

32-in. tri-gate HD panels with high reliable and self-healing integrated
gate driver on array substrate were designed and manufactured byamorphous silicon technology. Moreover, several severe reliability tests
have been passed, including 2000 h high-temperature high-humidity
operation, 2000 h low-temperature operation and 168 h image sticking
test.
AMDp2 - 8L Reduction of Offset Voltage in Poly-Si Hall Devices
by Enlarging Channel Size
D. Tadokoro*, M. Kimura*,**,***, A. Yoshikawa*,
T. Matsumoto*, T. Matsuda*,**,****Ryukoku Univ., Japan**Joint Res. Ctr. for S&T, Japan***High-Tech Res. Ctr., JapanWe are developing magnetic area sensors using poly-Si Hall devices.
One issue is offset voltage in the Hall voltage, which occurs even
without the magnetic field and is due to the zigzag path of the electric
current. We have succeeded in reducing the offset voltage by enlarging
the channel size.
AMDp2 - 9L High Performance CLC LTPS TFTs on Glass
Substrate Using Sputtered HfO2 Gate Dielectric
T. Meguro, A. Hara
Tohoku Gakuin Univ., Japan
We reported on the performance of CLC LTPS TFTs, which were
fabricated at 550 C with a sputtered HfO2 gate dielectric on a glass
substrate. The output current of the HfO2 TFTs achieved four and twotimes the magnitude of those of the SiO2 TFT and Al2O3 TFT,
respectively.
AMDp2 - 10L Working Confirmation under Low Illuminance for a
Photosensor Pixel Using Thin-Film Phototransistor
S. Oyama*, T. Kadonome*, T. Tanaka*, T. Fuchiya*,
T. Matsuda*,**,***, M. Kimura*,**,****Ryukoku Univ., Japan**Joint Res. Ctr. for S&T, Japan***High-Tech Res. Ctr., JapanWe are developing photosensor pixels using thin-film phototransistors
for various applications including artificial retinas. Until now, we havemerely executed working confirmation under high illuminance. In thisresearch, we try working confirmation under low illuminance. It is foundthat this photosensor pixel can detect a minimum illuminance of 5 lx.

78

Wednesday

December 3

AMDp2 - 11L Top-Gate LT Polycrystalline-Germanium TFTs on
Glass Substrate Using CW Laser Crystallization
Y. Nishimura, T. Sasaki, W. Tsuda, T. Meguro, A. Hara
Tohoku Gakuin Univ., Japan

AMDp2 - 12L Hybrid Simultaneous Emission Pixel Circuit for High
Brightness AMOLED Displays
S.-J. Song, H. Nam
Kyung Hee Univ., Korea
This paper describes a new simultaneous emission AMOLED pixel
circuit where the programming operation occurs at the same time withlight emission leading to high brightness. The SPICE simulation
ensures that the proposed scheme reduces the average current error
to 1.5% regarding the threshold voltage variation of 0.2 V.
AMDp2 - 13L Improve Abnormal Defect of AMOLED Panelthrough both Side Suppressed GIDL Current
W. S. Kim, Y. M. Kim, T. Cheng
Ordos Yuansheng Optoelect., China
AMOLED panel has performed transistor aging process what
suppressed GIDL for clear unable controlled abnormal defect. Thismethod is drain edge side stress aging effect. In this paper discuss toimprove of unable controlled abnormal defect through to both side
suppressed GIDL.
AMDp2 - 14L Analysis and Improvement Method of Image
Sticking in ADS Mode Applied Four-Mask Process
S. J. Choi, Y. S. Song, J. Y. Jung*, Z. W. Chen*, J. Niu,
G. B. Hui, J. I. Ryu, J. M. Jun
BOE Tech. Group, China*Hefei Xinsheng Optoelect. Tech., China
In ADS mode, common and gate electrode can be patterned by one
mask. However, due to its characteristics, under the gate, ITO is wholly
patterned and even bigger, thus, that part, we call it ITO wing.
Therefore, we had studied how ITO wing affects image sticking (I.S) of
panels and how to solve it.

79

AMD

LT poly-Ge TFT was fabricated using CW laser crystallization and athin Al2O3 gate dielectric. The poly-Ge film was crystallized by themechanism of solid-phase self-sustaining crystallization with grains 20
nm in size. A mobility of 17 cm2/Vs was achieved, and the ability tooperate at 5 V was demonstrated.

Wednesday

December 3

AMDp2 - 15L Pixel Circuit Structure of Compensated Voltage
Program for AMOLED
S. Yang, X. Dong, H. Wang, H. Xue, Z. Chen, Y. Zhang,
P. Wang
BOE OptoElect. Tech., China
In this paper, We propose a pixel compensating drive circuit, thevoltage compensation process which can effectively solve the driving
TFT threshold voltage Vth of the variation, thereby causing the current
through the OLED non-uniformity problems. The results simulated by
SmartSpice also can demonstrate the feasibility of this compensation.
AMDp2 - 16L High-Performance Organic TFTs with an Organic
Gate Insulator Having Molecular Alignment
Capability
Y. Nagatsuka, H. Tokuhisa*, Y. Iimura
Tokyo Univ. of A&T, Japan*JSR, Japan
We have presented device properties of OTFTs, in which two types of
newly-developed organic gate insulators with molecular alignment
capabilities are used. An OTFT with a pentacene layer deposited on agate insulator with planar alignment capability gives extra-high carrier
mobility of ~ 5 cm2/Vs indicating high crystallinity of the film.

IDW ’14 Tutorial in Japanese
Organized by SID Japan Chapter
Tuesday, December 2, 2014
Room 301, 3F
TOKI MESSE Niigata Convention Center
Detailed information is available on
http://www.sid-japan.org

EXHIBITION
12:40 – 18:00 Wednesday, Dec. 3, 2014
10:00 – 18:00 Thursday, Dec. 4, 2014
10:00 – 14:00 Friday, Dec. 5, 2014
Exhibition Hall B
TOKI MESSE Niigata Convention CenterFree admission with your registration name tag
80

Thursday

December 4
Thursday, December 4

9:00 - 10:15

Snow Hall A

AMD1: High Resolution Displays Using LTPS and Oxide TFTs
Special Topics of Interest on Oxide-Semiconductor TFT
T. Kamiya, Tokyo Inst. of Tech., Japan
K. Takatori, NLT Techs., Japan

AMD1 - 1:
9:00

Invited High PPI Technologies for Mobile Displays

AMD

Chair:
Co-Chair:A. Takimoto
Japan Display, Japan

High pixel density LCD technologies have been continuously
developed. Recently, high pixel density displays with touch interface
have become the standard for smartphones. Tablet PCs follow thesame trend. However, further development may face technicalchallenges. In this paper, the latest developments to tackle these
problems are discussed.
AMD1 - 2:
9:25

Invited Advantages of IGZO Platform in Ultra-HighResolution LCD Applications
N. Ueda, Y. Ogawa, K. Okada, A. Oda, S. Katoh,
S. Uchida, K. Yamamoto, T. Matsuo, H. Kawamori
Sharp, Japan

This paper describes the advantages of Oxide TFT platform technology
in ultra high resolution displays making use of Channel Etch (CE) Type
Oxide TFT. It also explores the latest and future approach to resolve
emerging concerns, such as panel driving power consumption,
aperture ratio, and narrow bezel.
AMD1 - 3:
9:50

Invited Ultra High-Definition OLED Display Using
C-Axis Aligned Crystalline Oxide Semiconductor
FETs
H. Miyake, S. Kawashima, S. Inoue, M. Shiokawa,A. Suzuki, S. Eguchi, Y. Hirakata, J. Koyama,
S. Yamazaki, T. Sato*, T. Shigenobu*, Y. Ohta**,S. Mitsui**, N. Ueda**, T. Matsuo**
Semiconductor Energy Lab., Japan*Advanced Film Device, Japan**Sharp, Japan

We fabricated an 8K OLED display. Channel-etch type c-axis aligned
crystalline oxide semiconductor (CAAC-OS) FETs demonstrate good
properties even in the channel length of 1.5 μm. Gap spacers between
pixels suppress leakage current through an intermediate layer of thetandem OLED.
----- Break -----

81

Thursday

December 4

10:45 - 12:20

Snow Hall A

AMD2: Physics of Oxide Semiconductors
Special Topics of Interest on Oxide-Semiconductor TFT
Chair:
Co-Chair:J. Jang, Kyung Hee Univ., Korea
N. Morosawa, Sony, Japan

AMD2 - 1:
10:45

Invited Multiple Origins of Near-VBM Defects and Its
Passivation Effects in a-In-Ga-Zn-O
T. Kamiya, H. Kumomi, H. Hosono
Tokyo Inst. of Tech., Japan

Amorphous oxide semiconductor, represented by a-IGZO, exhibits highelectron mobilities > 10 cm2/Vs even if deposited at room temperature.
Several defects and effects of hydrogen and oxygen have beenreported to date. This paper reviews recent results on these issues anddiscuss their effects on optimum deposition condition for a-IGZO.
AMD2 - 2:
11:10

Invited Thermalization Energy Analysis of theStability of Amorphous Oxide Thin Film Transistors
A. J. Flewitt
Univ. of Cambridge, UK

TFTs incorporating amorphous oxide semiconductors as the channelmaterial are known to suffer from threshold voltage shifts under both
positive and negative gate bias conditions. The thermalization energy
will be covered as a means of converting measurements as a functionof time into measurements as a function of energy.
AMD2 - 3:
11:35

Invited Origin of High Photoconductivity Gain and
Persistent Photoconductivity in Nanocrystalline
Oxide Photo-Sensors
S. Jeon
Korea Univ., Korea

We present the mechanism of high photoconductivity gain andpersistent photoconductivity in nano-crystalline oxide photo-transistor.
Under the illumination, sub-gap optical absorption in oxide
semiconductor causes the ionization of oxygen vacancy, which leads tohigh photocurrent in an operation condition. Also, the origin of
persistent photoconductivity will be discussed.

82Thursday
AMD2 - 4
12:00

December 4
Differences in Crystalline Morphology among
Crystalline Oxide Semiconductors
K. Dairiki, Y. Nonaka, M. Koyama, Y. Yamada,
A. Shimomura, N. Sorida, E. Takahashi, M. Takahashi,
S. Yamazaki
Semiconductor Energy Lab., Japan----- Lunch ----13:30 - 14:55

Snow Hall A

AMD3: Stability of Oxide TFT
Special Topics of Interest on Oxide-Semiconductor TFT
Chair:
Co-Chair:S. Jeon, Korea Univ., Korea
M. Kimura, Ryukoku Univ., Japan

AMD3 - 1:
13:30

Invited Improved Electrical Characteristics andStability Using Various Post Treatments on
Sputtered In-Ga-Zn-O Thin-Film Transistors
Y. J. Tak, S. P. Park, H. Lee, H. J. Kim
Yonsei Univ., Korea

We have demonstrated various post treatments including high pressure
annealing, simultaneous UV and thermal treatment, and doped
passivation layer. These treatments have been performed to improvestabilities and electrical characteristics on sputtered In-Ga-Zn-O thinﬁlm transistors by reducing defect sites related to oxygen vacancies
and increasing metal oxide bonds.
AMD3 - 2
13:55

Reliability of Amorphous InGaZnO Thin Film
Transistors with Low Water-Absorption Passivation
Layer
S. Ishikawa, T. Miyasako, H. Katsui, K. Tanaka,
K. Hamada, C. Kulchaisit*, M. Fujii*, Y. Ishikawa*,
Y. Uraoka*
JSR, Japan*Nara Inst. of S&T, Japan

Polymer passivation with low water absorption has been investigatedfor high reliable amorphous InGaZnO (a-IGZO) TFT. The photosensitive
siloxane/silsesquioxane (SSQ) material is coated by a solution process
without plasma etching process to avoid serious damage to thechannel layer. The stability of a-IGZO TFTs was improved by polarity
controlled siloxane material.

83

AMD

We compared crystalline morphologies of c-axis aligned crystalline InGa-Zn-O (CAAC-IGZO) with those of single crystalline andpolycrystalline IGZO. The CAAC-IGZO has c-axis alignment but does
not have alignment along a-b plane and clear grain boundaries.
Therefore, the crystalline morphology of CAAC-IGZO is clearly
distinguishable from those of other crystalline states.

Thursday

December 4

AMD3 - 3
14:15

Channel Length Dependent Bias and Light Stabilityof Bulk Accumulation a-IGZO TFTs with Top Gate
Offsets
S. Lee, M. Mativenga, J. Jang
Kyung Hee Univ., Korea

Effect of bulk-accumulation on the negative-bias-illumination-stress(NBIS) stability of dual gate-driven a-IGZO TFTs with 2-µm tog-gateoffsets is investigated. By varying the channel length, it is shown that
the TFTs are immune to NBIS, as long as half of the channel region islight shielded and under bulk-accumulation.
AMD3 - 4
14:35

Effect of Parasitic Capacitance on Pixel
Compensation Circuit Developed by Oxide TFT
C.-Y. Lee, W.-C. Hsu, M.-W. Shih, Y.-L. Chen,
C.-C. Huang, L.-W. Liu, C.-K. Lo, H.-G. Chang, C.-H. Liu,
L.-F. Lin, H.-S. Lin, L.-H. Chang, Y.-H. Lin
AU Optronics, Taiwan

We have developed the pixel compensation circuit of 65-in. AMOLED
Display, which was demonstrated in 2013. The effect of inherent
parasitic capacitance, will be presented in this paper. To achieve a
better performance of panel uniformity and reduce the inﬂuence ofparasitic capacitance, the optimization of pixel design is necessary.
----- Break ----15:15 - 16:45

Snow Hall A

AMD4: Higher Performance Oxide TFT
Special Topics of Interest on Oxide-Semiconductor TFT
Chair:
Co-Chair:

H. J. Kim, Yonsei Univ., Korea
H. Kumomi, Tokyo Inst. of Tech., Japan

AMD4 - 1:
15:15

Invited Bulk Accumulation Oxide TFTs for High
Resolution Displays
J. Jang, M. Mativenga, D. Geng
Kyung Hee Univ., Korea

Owing to bulk-accumulation, dual-gate amorphous-indium-gallium-zincoxide (a-IGZO) thin-film transistors (TFTs) with top- and bottom-gates
electrically tied together exhibit higher on-current, better turn-on
voltage uniformity and lower sub-threshold voltage swing compared tosingle-gate-driven a-IGZO TFTs. In this talk, their optimization andapplication to fast TFT circuits and high resolution displays, arereviewed.

84Thursday
AMD4 - 2
15:40

December 4High Mobility Zn-Free Oxide Thin Film Transistors
T. Kugimiya, M. Ochi, A. Hino, H. Goto, Y. Takanashi,
M. Kanamaru*
Kobe Steel, Japan*Kobelco Res. Inst., Japan

AMD4 - 3
16:00

Amorphous In2O3-Based Thin Film Transistors
Fabricated by Low-Thermal Budget Process withHigh Mobility and Transparency
C.-H. Chang, C.-S. Fuh, C.-J. Chang, C.-C. Chang,
X.-Y. Yeh, P.-T. Liu, H.-H. Lin*, K.-L. Fang*, Y.-C. Kao*,
C.-L. Lee*, P.-L. Shih*, W.-C. Chang*, I.-M. Lu*
Nat. Chiao Tung Univ., Taiwan*Yeh Hsin Tech., Taiwan

In this work, the inﬂuence of annealing on In-W-O (a-IWO) TFTs wasinvestigated. The 100oC-annealed a-IWO TFTs exhibited an optimized
performance with mobility of 39.16 cm2/Vs. Owing to the energy fromannealing process, the structural relaxation can be enhanced leading
to a better electrical characteristic of a-IWO TFTs.
AMD4 - 4L: Invited Large-Sized and UHD Curved OLED TV
16:20
Employing White OLEDs and Oxide TFTs
C.-W. Han, H. Kang, Y.-H. Shin, H.-J. Shin, B.-C. Kim,
H.-S. Kim, B.-S. Kim, Y.-H. Tak, C.-H. Oh, B.-C. Ahn
LG Display, Korea
In this paper, we will introduce technological progress forcommercializing large-sized and UHD curved OLED TV. Thosetechnologies including WOLEDs, Oxide TFTs, compensation circuit andsolid phase encapsulation enable panel size scalability as well as mass
production with lifetime reliability.
----- Break ----17:00 - 18:30

Snow Hall A

AMD5: Printed Electronics
Special Topics of Interest on Printed Electronics
Chair:
Co-Chair:Y. Fujisaki, NHK, Japan
H. Minemawari, AIST, Japan

AMD5 - 1:
17:00

Invited High Performance Polymer Semiconductors
A. OhnoMitsubishi Chem., Japan

Solution processable polymer semiconductors whose mobility is up to
23.7 cm2/Vs have been developed. The mobility number opens up a
new ground for applications with mobility more than 10 cm2/Vs range,such as TFTs for OLED and HF(High Frequency) communication.
85

AMD

We have developed a new Zn-free oxide thin-film transistor (TFT) withhigh field effect mobility above 60 cm2/Vs. The TFT of etch stop layer
structure requires no additional process to conventional process for a
TFT. The new oxide-TFT shows excellent characteristics with a positive
threshold voltage of 0.5 V, sub-threshold swing (SS) of 0.19 V/decade.

Thursday
AMD5 - 2:
17:25

December 4
Invited Flexible Printed Organic TFT Arrays andIntegrated Circuits
S. Tokito
Yamagata Univ., Japan

Newly developed silver nanoparticle ink and organic semiconductormaterials for printed TFT (OTFT) devices have been applied totransistor arrays and exhibited very good electrical performance.
Integrated circuits based on the OTFT devices were also fabricatedusing printing methods. In addition, ultra-thin and ﬂexible circuits weresuccessfully demonstrated.
AMD5 - 3
17:50

Alignment Control of Patterned Organic
Semiconductor Crystals in Short Channel Organic
Thin-Film Transistors
Y. Fujisaki, D. Takahashi*, Y. Nakajima, H. Tsuji,
M. Nakata, T. Yamamoto
NHK, Japan*Tokyo Univ. of Sci., Japan

Patterning deposition of crystalline organic semiconductor film is key
issue to achieve high mobility organic thin-film transistor arrays. We
present a patterning method which can control alignment direction oforganic crystals. The corresponding short channel TFTs showed a highmobility of over 1 cm2/Vs.
AMD5 - 4L: Invited Small Molecule/Polymer Formulations for
18:10
High Performance, High Uniformity Top Gate OTFTs
M. Cowin, C. Watson, J. Carter, K. Crowley, R. Griffiths,
B. Brown
Smartkem, UK
Small molecule/polymer organic semiconductor blends have beenformulated to give transistors with mobilities of >3 cm2/Vs at channel
length of 4 µm. The uniformity of on-current is <10% across a 100 mm
substrate using both curved and linear transistor configurations. The
devices also have excellent bias stress stability.
Author Interviews and Demonstrations
18:30 – 19:30

RECEPTION
Wednesday, December 3, 2014
19:00 – 21:00
Room “Continental” (4F)
Hotel Okura Niigata
See page 12 for details

86Friday

December 5
Friday, December 5

9:00 - 10:15

Marine Hall

AMD6: Chemistry of Oxide Semiconductors and TFT
Special Topics of Interest on Oxide-Semiconductor TFT
K.-H. Su, Evonik Inds., Germany
K. Takatori, NLT Techs., Japan

AMD6 - 1L
9:00

Improvement of Positive Bias and Temperature
Stress Stability by Fluorine Passivated In-Ga-Zn-O
Thin-Film Transistors

AMD

Chair:
Co-Chair:J. Jiang, T. Toda, D. Wang, M. Furuta
Kochi Univ. of Tech., Japan
Positive bias and temperature stress (PBTS) stability of InGaZnO(IGZO) thin-film transistors (TFTs) with SiOX and ﬂuorinated silicon
nitride passivation were investigated. It was found that ﬂuorine
effectively passivated traps and weakly bonded oxygen in IGZO and/or
at gate insulator/IGZO interface, resulting in the improvement of PBTS
for oxide TFTs.
AMD6 - 2L
9:15

Chemical Analysis of Fluorine in Highly Reliable
Oxide Thin Film Transistor with Silicon Nitride Gate
Insulator
H. Yamazaki, Y. Ishikawa, M. N. Fujii, J. P. S. Bermundo,
E. Takahashi*, Y. Andoh*, Y. Uraoka
Nara Inst. of S&T, Japan*Nissin Elec., Japan

We propose highly stable amorphous In-Ga-Zn-O thin-film transistors(a-IGZO TFTs) with ﬂuorinated silicon nitride (SiNx:F) gate insulator
against voltage bias and temperature stress. Result of X-ray
photoelectron spectroscopy (XPS) measurement revealed that Indium
bound with ﬂuorine in a-IGZO plays the dominant role to improve the
TFT reliability.
AMD6 - 3L
9:30

Quantitative Verification Method of IGZO TFT
Characteristics Using Oxygen Incorporation
Calculation
J. Noh, H. J. Koo, J. S. Seo, S. H. Park, P. S. Yun,
J. U. Bae, K.-S. Park, I. Kang
LG Display, Korea

The amount of Oxygen incorporation on IGZO film during deposition is
one of the main factors that significantly affect the electrical properties
IGZO TFTs. In this work, we report the quantitative verification methodof IGZO TFT characteristics using oxygen incorporation calculation andinvestigate the correlation between calculation and TFT characteristics.

87Friday
AMD6 - 4L
9:45

December 5
Excimer Laser Annealing of Amorphous Oxide
Thin-Film Transistors Passivated with Hybrid
Passivation Layer
J. P. S. Bermundo, Y. Ishikawa, M. N. Fujii,
M. V. D. Zwan*, T. Nonaka**, R. Ishihara*, Y. Uraoka
Nara Inst. of S&T, Japan*Delft Univ. of Tech., The Netherlands**AZ Elect. Materials Manufacturing Japan, Japan

We performed excimer laser annealing on passivated amorphous oxide
semiconductor thin-film transistors such as amorphous InZnO andInGaZnO. These thin-film transistors were passivated by a hybrid
passivation known as polysilsesquioxane. We show that excimer laser
annealing is a good low temperature annealing method for highperformance amorphous oxide thin-film transistors.
AMD6 - 5L
10:00

Effect of Wet-O2 Annealing on the Characteristics of
Solution-Derived Amorphous InZnO Thin-Film
Transistors
Y. Osada, Y. Ishikawa, M. N. Fujii, Y. Uraoka
Nara Inst. of S&T, Japan

We investigated the effect of wet-O2 annealing on the characteristics ofamorphous InZnO thin-film transistor fabricated by spin-coatingprocess. The wet-O2 annealing improved the field-effect mobility andthe sub-threshold swing value. Furthermore, the device yield wassignificantly improved.
----- Break ----10:45 - 11:45

Marine Hall

AMD7: Back-Channel Etched Oxide TFT
Special Topics of Interest on Oxide-Semiconductor TFT
Chair:
Co-Chair:T. Noguchi, Univ. of the Ryukyus, Japan
H. Kumomi, Tokyo Inst. of Tech., Japan

AMD7 - 1L
10:45

Fabrication of Back-Channel-Etch (BCE) a-InGaZnO
TFT with a Damage Free Wet Chemical EtchantT.-C. Fung, C. Kim, T. Chang, J. Hong, P. Vermeulen*,
P. Janseen*, Y. Lu*, S. Collins*, L. Robichaux*
Qualcomm MEMS Technologies, USA*SACHEM, USA

A-IGZO TFTs with back-channel-etch structures were demonstrated.
Mo source/drain electrodes were patterned by Sachemʼs proprietary
formulation. With a high etch selectivity; BCE can be performed without
damaging the IGZO layer. Our BCE TFTs exhibit a sub-thresholdswing, Von and mobility comparable with those of conventional ESLtype TFT.

88

Friday
AMD7 - 2L
11:00

December 5
Oxide Semiconductor Thin Film Transistor
Compatible with Cu Interconnection Fabricated by
Back Channel Etching
S. Morita, M. Ochi, H. Tao, H. Goto, T. Kugimiya,
M. Kanamaru*
Kobe Steel, Japan*Kobelco Res. Inst., Japan

AMD7 - 3L
11:15

Application of High Stable Solution-Process MetalOxide Semiconductor in a Back-Channel-EtchingThin-Film Transistor
K.-H. Su, M. Marinkovic, D.-V. Pham, A. Merkulov,
A. Hoppe, R. Anselmann
Evonik Inds., Germany

Evonik has been working on solution-process metal oxide for a few
years, and we now present a more highly etching-resistive metal-oxide
semiconductor than the sputter one. We have achieved high mobility(10 cm2/Vs) and stable and homogeneous characteristics in the oxideTFT by introducing iXsenic semiconductor into the BCE structure. With
its remarkable performance, our material is also successfully applied ina high-resolution display product for mobile applications.
AMD7 - 4L
11:30

Back-Channel Etched Amorphous IGZO TFTs Using
the Copper as the Gate/Data Line Metal
C.-Y. Hou, C.-Y. Tu, C.-N. Lin, S.-F. Wu, S.-C. Lee,
W.-C. TsaiAU Optronics, Taiwan

BCE structure IGZO TFT using copper as the source/drain metal anddifferent passivation layer were studied. The device characteristics andreliability of Cu BCE structure IGZO TFT can be improved by modifying
the annealing temperature and passivation layer.
----- Lunch -----

89

AMD

We report successful fabrication of back channel etch type oxide
semiconductor TFTs with Cu interconnection. By using originallydeveloped amorphous oxide semiconductor which is highly resistive toacid etchants, etching damage to a channel portion was prevented. The
TFTs show a low sub-threshold swing 0.22 V/decade and highreliability.

Friday

December 5

13:30 - 14:15

Marine Hall

AMD8: Advanced Si Technology
Chair:
Co-Chair:S. Horita, JAIST, Japan
M. Inoue, Huawei Techs., Japan

AMD8 - 1L
13:30

Poly Si TFTs Formed below 180°C Using Blue Laser
Diode Annealing
T. Noguchi, T. Ashitomi, K. Shimoda, T. Gushiken,
T. Okada, E. Jacques*, H. Dong*, T. Mohammed-Brahim*
Univ. of the Ryukyus, Japan*Univ. of Rennes 1, France

After crystallizing the sputtered Si films deposited at room temperature
by Blue Diode Laser Annealing at 5 W, TFTs are successfully
fabricated below 180℃. Promising transfer curve was obtained with themobility of 10 cm2/Vs. The TFTs are expected to be formed on ﬂexible
sheet.
AMD8 - 2L
13:45

Area Expansion of Crystallized Si Films on YSZLayers by Two-Step Method in PLA
M. T. K. Lien, M. Yamano*, T. Hirata*, S.-I. Kuroki*,
S. Horita
JAIST, Japan*Hiroshima Univ., Japan

Area expansion of Si thin films crystallized by the two-step method on
YSZ layers are performed successfully by moving sample stage in PLA.
Crystallinity of Si film is improved and its surface is quite smooth
without incubation layer at the interface, indicating the uniform
crystallinity of Si on YSZ.
AMD8 - 3L
14:00

Formation of Solution-Derived SiO2 Thin Films by
CO2 Laser Annealing for Polycrystalline Silicon Thin
Film Transistors
D. Hishitani, M. Horita, Y. Ishikawa, Y. Watanabe*,
H. Ikenoue*, Y. Uraoka
Nara Inst. of S&T, Japan*Kyushu Univ., Japan

Formation of perhydropolysilazane based SiO2 film by CO2 laser
annealing was investigated. Polycrystalline silicon thin film transistors
with the SiO2 film as a gate insulator were fabricated. The TFT showed
the field effect mobility of 27 cm2/Vs and hysteresis shift of ‑0.11 V. We
considered the cause of the hysteresis.
Author Interviews and Demonstrations
16:45 – 17:45
Supporting Organizations:Technical Committee on Electronic Information Displays, Electronics
Society, IEICE
Thin Film Materials & Devices Meeting90

Wednesday

December 3

Workshop on FPD Manufacturing,
Materials and Components
Wednesday, December 3
14:00 - 15:20

Marine Hall

FMC1: Manufacturing Technologies
M. Kimura, Nagaoka Univ. of Tech., JapanP. E. Malinowski, imec, Belgium

FMC1 - 1:
14:00

Invited Visualization Analyses of Replication
Molding Phenomena in Injection Molding

FMC

Chair:
Co-Chair:

H. Yokoi
Univ. of Tokyo, Japan
Visualization technologies inside molds play an important role in theclarification of unsolved molding phenomena. This paper reviews topics
on visualization analyses of replication molding phenomena, focusing
on the behavior of melt filling into the fine grooves of molds, and thedemolding process between the replicated surface and mold surface.
FMC1 - 2
14:20

Development of Roll to Sheet Gravure OffsetPrinted Touch Sensor Fabrication
J. W.-C. Yu, S.-A. Kuo, C.-H. Chen
AU Optronics, Taiwan

We report a roll-to-sheet gravure offset printing process to fabricate
insulator layer, metal-bridge, and trace (15 μm) on the glass for touch
panel application. Printing quality was strongly dominated on printing
processes, such as blade doctoring and off step process. A printed
7.85-in. touch panel by roll-to-sheet printing is also be demonstrated inthis work.
FMC1 - 3
14:40

Patterning of Multicolor OLEDs with Ultra-High
Resolution by Photolithography
P. E. Malinowski*, T. Ke*, A. Nakamura**, S. Steudel*,D. Janssen**, Y. Kamochi***, I. Koyama***, Y. Iwai***,P. Heremans*,*****imec, Belgium**FUJIFILM Elect. Materials (Europe), Belgium***FUJIFILM, Japan****Holst Ctr., the Netherlands

We report on patterning small-molecule OLEDs by fab-compatible
photolithography with non-ﬂuorinated, chemically amplified i-line
photoresists. We demonstrate electroluminescence in patterned redgreen-blue OLEDs and in side-by-side patterned multicolor OLEDs.
Resolution can exceed 1000 ppi; submicron photoresist structures areshown. These results are a step towards realizing ultra-high definition
true-color OLED displays.
91

Wednesday
FMC1 - 4
15:00

December 3
Ultrafast, All-Laser Precision Manufacturing of
Display Cover Glass for Consumer Devices
M. Mielke, D. Gaudiosi, M. Shirk, E. Juban,
M. Greenberg, N. Matthew, T. Booth, S. Srinivas
Raydiance, USA

We describe the first all-laser precision glass machining system for
consumer device cover displays. The femtosecond laser-based method
enables cut-outs, interior features and chamfering of unstrengthened orstrengthened Gorilla Glass and sapphire crystal. This new all-laser
technology approach and the results achieved demonstrate superioredge quality with no post processing.
----- Break ----15:45 - 16:45

Marine Hall

FMC2: Materials and Components
Chair:
Co-Chair:R. Yamaguchi, Akita Univ., Japan
W. I. Milne, Univ. of Cambridge, UK

FMC2 - 1:
15:45

Invited Graphene for Plastic Electronics
W. I. Milne, G. Hu, R. C. T. Howe, A. C. Ferrari, F. Torrisi,
T. HasanUniv. of Cambridge, UKThis paper will begin with a description of the liquid phase exfoliation
method of graphene production. The remainder of the talk willconcentrate on our work on the application of graphene to plastic
electronics, including its use as a transparent conductor for transparent
pianos and ﬂexible smart windows.
FMC2 - 2
16:05

A New Type of Alignment Material for DoubleLayered Retarders Composed of Polymerizable LC
R. Takasago, A. Tamura, T. Miyahara, S. Morishima,
N. Yanagihara, Y. Takahashi, Y. Furuki, S. Yoshida, Y. Ito
FUJIFILM, Japan

We have successfully developed a new alignment material for doublelayered retarders consisting of polymerizable liquid crystals. The newmaterial concurrently controls both the 1st LC and the 2nd LC layeralignments and provides an excellent achromaticity for quarter-waveretardation films (QWFs).

92

Wed./Thu.
FMC2 - 3
16:25

December 3/4
Inorganic Wave Plates with High Performance in
Visible Region Fabricated by Serial Bideposition
N. Koike, K. Sasaki, E. Takahashi, N. Hanashima,
A. Takada, M. Suzuki*
Dexerials, Japan*Kyoto Univ., Japan

We investigated the optical characteristics and microstructures of wave
plates composed of Ta2O5 (100-x) + TiO2 (x) and prepared by the socalled serial bideposition technique. As a result, the inorganic wave
plates with optimized TiO2 content were advantageous for applications
where high transmittance and high-temperature durability are essential.

FMC

Author Interviews and Demonstrations
17:15 – 18:15

Thursday, December 4
9:00 - 12:00

Exhibition Hall B

Poster FMCp1: Manufacturing Technologies
FMCp1 - 1

High Resolution Technology for FPD Manufacturing
N. Yabu, K. Nagano, N. Izumi
Canon, Japan

Using shorter wavelength for exposure light is one way to achieve highresolution with keeping sufficient depth of focus (DOF). We show
exposure results for 1.0 μm resolution to confirm the effect of deep UV(DUV) exposure light. With DUV light, 1.0 μm pattern is resolved while
keeping sufficient DOF.
FMCp1 - 2

Realization on Short-Pitch with Wing/Body
Patterning Technology
Z. Cao, G. Hui, B. Zhang, X. He, S. J. Choi
BOE Tech. Group, China

In this paper, we have successfully developed short-pitch at fan-out
area with wing pattern technology. A short-pitch smaller than 5.5 μm(line width + space) is be confirmed to replace the present level about
10 μm, which are able to decrease the fan-out area and obtain slim
border for high PPI product.
FMCp1 - 3

Withdrawn

FMCp1 - 4

First Ultra Thin Glass Temporary Bonding
Technology Apply in LTPS-LCD
C.-H. Liao, C.-H. Chan, S.-P. Chiao, T.-C. Fan, Y.-H. Lai,
J.-K. Lu, N. Sugiura
AU Optronics, Taiwan

We have developed an ultra thin LTPS LCD applying temporary
bonding technology not glass thinning process. Our product 4.3-in. ultra
thin display is the 0.2 mm thin cell assembled by 0.1 mm thin array and
0.1 mm thin CF. Both feature 512 ppi high resolution with 0.65 mm
narrow border.
93Thursday
FMCp1 - 5

December 4Electrostatic Control for Flexible Substrate DeBonding Process
C.-C. Tsai, H.-P. Shih, C.-C. Wu, C.-W. Kung, K.-W. Lan
ITRI, Taiwan

This paper reports the results of investigations into electrostatic
charging phenomena of the separation between the ﬂexible substrate
and the carrier glass. Water and air ionizer were used to reduce
electrostatic charge. The results indicate that water not only reduces
the static charge but also affects the de-bonding force.
FMCp1 - 6

Withdrawn

FMCp1 - 7

Direct Morphology Observation of LC-Polymer
Boundary Imaged by Atomic Force Microscope
K. Ueda, T. Yamamoto, M. Kimura
Nagaoka Univ. of Tech., Japan

Surface morphology of polymer in contact with liquid crystal layer (LC)was directly observed by atomic force microscope (AFM). Cantilever tipof AFM penetrates the LC layer and traces the polymer surface directly.
The real morphology of LC-polymer boundary is directly imaged
without removing the LC layer.
FMCp1 - 8L Novel Low-Temperature Activation Method by Soft
X-ray Irradiation
A. Heya, N. Matsuo, K. Kanda
Univ. of Hyogo, Japan
Novel activation method of B in Si using soft X-ray undulator was
proposed. The effect of soft X-ray irradiation was remarkable below
500 C. The activation energy for soft X-ray irradiation was lower thanthat for thermal annealing. By using B10H14 cluster, the sheet resistanceof 55 Ω/sq was obtained.
FMCp1 - 9L UV-Pretreatment and NIR-RTA Enhanced
Dehydrogenation for a-Si:H Thin Films at 400°C
S. Ji*,***, P. Jeong*, C.-S. Hwang**, S. Lee*, S. H. Cho**,
Y. Han*, K. S. Lee****AP Syss., Korea**ETRI, Korea***Sogang Univ., Korea

A method using ultra-violet-pretreatment (UVP) and near-infraredradiation-rapid-thermal-annealing (NIR-RTA) is proposed to enhancethe dehydrogenation process in the amorphous silicon thin films. Using
the proposed method, the dehydrogenation degree could be improved
up to 13%. Additionally, it was observed that the power consumption is
reduced and the dehydrogenation temperature is lowered.

94

Thursday

December 4

9:00 - 12:00

Exhibition Hall B

Poster FMCp2: Materials and Components
FMCp2 - 1

Withdrawn

FMCp2 - 2

High Thermal Stability Glass Substrate for High
Resolution Display
M. Hayashi, T. Murata, Y. Kato, T. Murata, M. Ohji
Nippon Elec. Glass, Japan

FMCp2 - 3

A Study of Spring Impact Hammer to Define theSpecification of Impact Test
K.-C. Chang, B.-C. Huang, C.-Y. Chiu, Y.-C. Liu
G-tech Optoelect., Taiwan

Spring impact hammer is a practicable method to evaluate the impact
energy of glass. It is stable, hitting the particular position accurately,
and the energy can be analyzed by Mechanical Energy Equation. It iscapable to replace the ball drop test.
FMCp2 - 4

Effect of N2O Doping on the Properties of ZnO Thin
Films on a-Al2O3 Using High-Energy H2O Generated
by a Catalytic Reaction
Y. Ohashi, S. Kanouchi, N. Yamaguchi, Y. Tamayama,
T. Kato, K. Yasui
Nagaoka Univ. of Tech., JapanZnO films were grown on a-plane sapphire substrates using a reaction
between alkylzinc (DMZn) and high-temperature H2O, the latter isgenerated by a Pt-catalyzed exothermic H2-O2 reaction. The inﬂuenceof the N2O gas addition during the growth on the properties of the ZnO
films was investigated.

Innovative Demonstration Session
by Oral and Poster Presenters

Live demonstrations of emerging information
display technologies
16:45 – 19:30 Thursday, December 4, 2014
12:30 – 15:15 Friday, December 5, 2014
Exhibition Hall B
See Page 212 - 215 for details
95

FMC

A new glass substrate “OA-30” has been developed. The high strain
point of OA-30 leads to reduced thermal shrinkage of glass substrates
during thermal treatment in the Low temperature poly-silicon (LTPS)
TFT process. Low thermal shrinkage of OA-30 contributes to therealization of high resolution displays with LTPS TFTs.

Thursday

December 4

FMCp2 - 5

Crystalline Structure and Dislocation Distribution of
ZnO Thin Film Grown on A-Plane Sapphire
Substrate Using High-Temperature H2O Produced
by a Pt-Catalyzed H2 and O2 Reaction
T. Nakamura, Y. Ishiduka, N. Yamaguchi, Y. Tamayama,
K. YasuiNagaoka Univ. of Tech., Japan
Crystalline structure of ZnO thin films, which were grown on a-planesapphire substrates through a reaction between dimethylzinc and hightemperature H2O produced by a Pt-catalyzed H2 and O2 reaction, wasobserved. The crystalline structure of a ZnO film grown on an a-Al2O3
substrate was observed using cross-sectional transmission electron
microscopy.
FMCp2 - 6

Development of Novel Primer Material Suitable forConnecting Cyclolefin Polymer Film and ITO Thin
Layer
T. Yamate, K. Kumazawa, K. Ono, S. Yamada, H. Suzuki,
M. Akazome*
Nippon Soda, Japan*Chiba Univ., Japan

We have developed a unique organic-inorganic hybrid coating agent
suitable for a primer which connects an ITO thin layer to a COP basematerial. An ITO film, using this material as primer, showed highdurability.
FMCp2 - 7

Development of the Li-Doped Potassium Sodium
Niobate Piezoelectric Ceramics with HighElectromechanical Coupling Coefficient and Applied
to Single-Element Ultrasound Transducers
C.-M. Weng, Y.-H. Zou, C.-C. Tsai*, C.-S. Hong**,
S.-Y. Chu

Nat. Cheng Kung Univ., Taiwan*Tung Fang Design Inst., Taiwan**Nat. Kaohsiung Normal Univ., Taiwan
In this study, the development of lead-free (1-x)(Na0.535K0.48)NbO3xLiNbO3 (NKLN) ceramics were investigated. The best piezoelectric
properties of NKLN ceramics with kp = 48%, kt = 52% were obtained at
x = 0.05. Furthermore, the ceramics were chose for fabrication of
single-element ultrasound transducers.

IDW ’15The 22nd International Display Workshops
December 9 – 11, 2015
Otsu Prince HotelOtsu, Japan
http://www.idw.or.jp
96Thursday
FMCp2 - 8

December 4High Dielectric Constant Material of(1-x)Na0.5K0.5NbO3 - xSrTiO3
H.-H. Su, C.-S. Lin*, C.-S. Hong**, C.-C. Tsai***,S.-Y. Chu
Nat. Cheng Kung Univ., Taiwan*Kun Shan Univ., Taiwan**Nat. Kaohsiung Normal Univ., Taiwan***Tung Fang Design Inst., Taiwan

In this study, composition of potassium sodium niobate based ceramics
were synthesized by the conventional solid-state reaction process. The
phase formation and microstructures using X-ray diffraction andscanning electron microscope. The dependence of dielectric constantand these indicate the presence of a relaxation process.
The Development of Multi-Layer Step-Down LeadFree Piezoelectric Transformers with High Isolation
and Its Applications on the AC-DC Inverters
Z.-Y. Chen, C.-C. Tsai*, C.-S. Hong**, S.-Y. Chu,
S.-K. Hung, C.-C. Chang-Chien
Nat. Cheng Kung Univ., Taiwan*Tung Fang Design Inst., Taiwan**Nat. Kaohsiung Normal Univ., Taiwan
The material of piezoelectric transformer was prepared by low
temperature co-fire ceramics technology. The best load is 100 Ω thepower and gain are 0.97 W and 0.52 respectively. The PT step-down
conversion system which the power and efficiency are 11 W and 96%
can combine with the adapters to drive LED successfully.
FMCp2 - 10L

Wide-view Circular Polarizers for a High Contrast
Ratio on MVA Mode LC Cell
A.-K. Kim, S.-W. Oh, T.-H. Yoon
Pusan Nat. Univ., Korea

We propose an optical compensation scheme by which we caneliminate the off-axis light leakage in a VA-LCD with circular polarizers.
By using this scheme, a contrast ratio higher than 1000:1 is achieved
over the entire 70 viewing cone in a MVA-LCD with circular polarizers.

IDW Best Paper AwardIDW Outstanding
Poster Paper Award
These awards will go to the most outstanding papers
selected from those presented at IDW ’14.
The 2014 award winners will be announced on the
IDW website: http://www.idw.or.jp/award.html
97

FMC

FMCp2 - 9

Thursday
FMCp2 - 11L

December 4
Effect of Thermally Decomposed Hydrazine on
Maximizing Potential Electronic Properties of
Non-Oxidized Carbon Nanotubes
P.-C. Wang*, Y.-C. Liao*,**, Y.-L. Lai**, Y.-C. Lin**,
Y.-J. Hsu***Nat. Tsing Hua Univ., Taiwan**Nat. Synchrotron Radiation Res. Ctr., Taiwan

We found the electronic properties of non-oxidized carbon nanotubes
could be further improved by a process involving trace hydrazine vaporand subsequent thermal purging. We demonstrated this facile process
could improve the conductivity of surfactant-free transparent thin films
and on-off ratio of inferior field-effect transistors based on carbon
nanotubes.
FMCp2 - 12L

Product Design for Cover Glass Based on Fracture
Analysis
H. Ohkawa, Y. Kobayashi, S. Akiba, K. Hayashi,
T. Nakashima, A. Nakagawa, H. Saiki, N. Ishimaru
Asahi Glass, Japan

Strength is one of the most important properties of cover glasses.
Based on the fracture analysis in the world, breakage mechanisms andevaluation methods were investigated. This time consideration of Face/
Front breakage mode and the evaluation by set drop were focused.
Product design for strong cover glass is showed.
FMCp2 - 13L

Development of Achromatic Polarizer Using Novel
Dichromatic Dye
D. Fujiwara, N. Mochizuki*, T. Ishinabe**, D. Nakamura,
N. Koma, H. Fujikake**
Polatechno, Japan*Nippon Kayaku, Japan**Tohoku Univ., JapanWe established a method to control the light absorption, dichroic ratio
and alignment direction of pigments for polarizers. We clarified that
distribution of dichroic pigments and cross-linker before the extension
process is important to improve the degree of polarization of polarizer
and successfully achieved achromatic polarizers with varioustransmittance.

SID Display Week 2015
May 31 – June 5, 2015
San Jose Convention Center
San Jose, California, U.S.A.
98

Thursday

December 4

9:00 - 12:00

Exhibition Hall B

Poster FMCp3: Lighting Technologies
Special Topics of Interest on Lighting Technologies
FMCp3 - 1

Construction of a Backlight Module by Connecting
Unit Cells with an Optical Fiber
T. Kojima, Y. Asakura, T. Ogawa, I. Fujieda
Ritsumeikan Univ., Japan

FMCp3 - 2

Effect of LGP Outline on Edge-Lit LED TV Design
H. He, Y.-Y. Qiu
Shenzhen China Star Optoelect. Tech., China

Uniformity issues were usually found in Edge-lit LED TV, due to LGP
outline affected the light propagation. In this study, one novel method
was introduced to quantify the phenomenon of DARK CORNER
MURA. Also, several different LGP conditions were simulated to comeout optimized outline parameters of LGP.
FMCp3 - 3

Solution for Achieving an Optimized LED Spectrum
for LCM
C.-T. Kang, M. C. Chien, Y.-Y. Qiu, Z.-J. Su, H. He
Shenzhen China Star Optoelect. Tech., China

By adjusting LED spectrum, consist of Wd of Blue chip shift andphosphor adjustment to match the confirmed CF & BLU spectrum, toincrease the brightness of LCM. To specific LCM system, by LED chip
red shift, LCM brightness will increase 6% effectively with correct whitechromaticity coordinates.
FMCp3 - 4

Portable LED Illuminating Device for Personal
Photodynamic Treatment and Cell Culturing
C.-J. Ou, Z.-W. Lin, Y.-S. Lin, P.-Y. Lin, J.-Y. Chen,
Y.-K. Tsai
Hsiuping Univ. of S&T, Taiwan

We demonstrate an LED based wearable photodynamic therapy device
that can conduct the designed illuminating energy to a specific tissue
region for targeting reaction. This device is designed based on the 4R
rules. Most important of all, the microdisplay techniques can also
integrate with this medical device.

99

FMC

A backlight module can be constructed by connecting unit cells with acurved optical fiber. In a unit cell, a trench fabricated on one surface ofa transparent plate houses the optical fiber and output couplers areplaced on the other surface of the plate.

Thursday
FMCp3 - 5

December 4
A Glare Detection for the High-Brightness LED
Display Boards Using a Digital Camera
Y.-H. Siao, P.-J. Wu*, B.-J. Pong**, S.-W. Hsu**,
C.-H. Wen***, C.-Y. Chen
Nat. Yunlin Univ. of S&T, Taiwan*Nat. Chiao Tung Univ., Taiwan**ITRI, Taiwan***Nat. Taiwan Univ. of S&T, Taiwan

This study proposes an easy way to obtain the glare distribution of thearea is full of the high-brightness LED display boards by using a digital
camera. The measurement is modified by the color correction and theuniformity correction and results of this detection are consistent withthe physiological questionnaire.
FMCp3 - 6

The Design of Personal Privacy and Wide Viewing
Functions LCM Model Design
Y. W. Chang
AU Optronics, Taiwan

We successfully develop a new LCM system with privacy and wideview functions. With our design, the users do not have to take off any
components to change the viewing status so that they can keep theprivacy or share the information of the display immediately.
9:00 - 12:00

Exhibition Hall B

Poster FMCp4: Oxide TFT/Printed Electronics
Special Topics of Interest on Oxide-Semiconductor TFT
FMCp4 - 1

Effect of Cu Dopant on Structural and Optical
Properties of Zinc Oxide Nanorods
Z. Jin, T. Umakoshi, Y. Abe, M. Kawamura, K. H. Kim
Kitami Inst. of Tech., Japan

We investigated structural and optical properties of Cu-doped zincoxide (CZO) nanorods (NRs) fabricated by chemical solution
deposition. With incorporation of Cu (10 at%) dopant, the length andcrystallinity of NRs increased and improved, respectively, compared toZnO NRs. However, the transmittance of CZO NRs was lower than ZnO
NRs
FMCp4 - 2

Post-Annealing Effect of Zinc Oxide Nanorods
Grown on Al-Doped Zinc Oxide Seed Layers
T. Umakoshi, Y. Abe, M. Kawamura, K. H. Kim
Kitami Inst. of Tech., Japan

We fabricated zinc oxide (ZnO) nanorods (NRs) grown on ZnO and Aldoped ZnO (AZO) seed layers and investigated post-annealing effects
on their structural and optical properties. Length of NRs increased byadding Al dopant in seed layer. The morphology and transmittancewere less changed after post-annealed at 500 C.
100

Thursday
FMCp4 - 3

December 4
Application of Microwave-Detected
Photoconductivity Decay Technique to Process
Monitoring in Back Channel Etching-Type TFT
Fabrication
H. Goto, M. Ochi, H. Tao, S. Morita, Y. Takanashi,
A. Hino, K. Hayashi, T. Kugimiya
Kobe Steel, Japan

We have conducted a feasibility study on the application of microwavedetected photoconductivity decay (μ-PCD) technique to processmonitoring in back channel etching-type (BCE) TFTs. By measuring the
μ-PCD at the back channel area of the TFTs in each process steps,
variations of the film characteristics can be precisely detected.
Copper Nano Particle Ink for Reverse Offset Printing
and the Application to Thin Film Transistors
M. Koutake*,***JAPERA, Japan**DIC, Japan

Copper nanoparticle ink specialized for reverse offset printing has beendeveloped and applied to make electrodes for OTFTs. The copper ink
sintered by Xe intense ﬂash light in ambient atmospheric conditions
showed good conductivity and compatibility with an organic
semiconductor.
FMCp4 - 5L Hard X-ray Photoelectron Spectroscopic Study
under Bias Voltage for Interface States at SiO2 /a-InGaZnO Interface
S. Yasuno, H. Oji, T. Watanabe, I. Hirosawa
JASRI, JapanThe energy distribution of the interface states for SiO2/a-IGZO interface
was evaluated using hard X-ray photoelectron spectroscopy (HAXPES)
under bias voltage. It was found that the interface states are observed
throughout the band gap of a-IGZO and there exists the largest gap
state near the conduction band edge.
----- Lunch -----

Evening Get-Together
with Wine
Tuesday, December 2, 2014
18:00 – 20:00
Observation Deck (31F),
Hotel Nikko Niigata(Sponsored by Merck Ltd., Japan)
See page 12 for details
101

FMC

FMCp4 - 4

Thursday

December 4

17:00 - 18:00

Snow Hall B

FMC3: Optical Films
Chair:
Co-Chair:

H.-M. P. Chen, Nat. Chiao Tung Univ., Taiwan
T. Nonaka, AZ Elect. Materials Manufacturing Japan,
Japan

FMC3 - 1:
17:00

Invited Microstructure Film for Wide Viewing TN-LCD
S. Katsuta, E. Yamamoto, Y. Asaoka, T. Kanno, H. Yui,
T. Kamada, T. Maeda, Y. Tsuda, K. Kondo
Sharp, Japan

A microstructure film has been developed to improve the viewing angle
characteristics of TN-LCD. This film can completely eliminate thegrayscale inversion of TN-LCD by controlling the shape of air microcavities which are fabricated inside the film. Further, this film can be
mass-produced efficiently by roll-to-roll self-alignment process.
FMC3 - 2:
17:20

Invited Meta-Surface Film for Heat-Cutting from theSun Light
M. Naya, T. Tani, S. Hakuta, H. Yasuda, N. Kiyoto
FUJIFILM, JapanWe developed a new metasurface for spectrally-controlled reﬂection
film. This structure is composed of dispersed silver disk-shaped nanoparticles in a monolayer. Wavelength of reﬂection light can be artificiallyengineered by controlling aspect ratio of silver nano discs. We
demonstrate that this structure is ideal for heat-cutting from the sun
light.
FMC3 - 3
17:40

Square Light-Diffusing Film by Collimated UV Lightand a Cross Shaped Light Diffuser
B. Katagiri, K. Kusama, T. Orui, S. Shoshi
LINTEC, Japan

Light-diffusing films that contain a refractive microstructure arepromising materials because of their superior, unique diffusing
properties. This study examined the condition of incident ultraviolet(UV) light and realized square light-diffusing films using an area lightsource that outputs UV light in a cross shape.
Author Interviews and Demonstrations
18:30 – 19:30

102

Friday

December 5
Friday, December 5

9:00 - 10:00

Snow Hall B

FMC4: Augmented Reality and Virtual Reality
Special Topics of Interest on Augmented Reality and Virtual Reality
Chair:
Co-Chair:

H. Okumura, Toshiba, Japan
M. Shinohara, Omron, Japan

FMC4 - 1:
9:00

Invited Wide Field of View Optical Combiner for
Augmented Reality Head-Up Displays
H. Okumura, A. Hotta, T. Sasaki, K. Horiuchi, N. Okada
Toshiba, Japan

FMC4 - 2
9:20

Panoramic 3D Floating Image Display Using Dual
Concave Reflectors
K. Li
Wavien, USA

This paper discloses 3D ﬂoating image systems that uses parabolicand elliptical reﬂectors with the ability of displaying ﬂoating images witha full 360-degree horizontal viewing angles. This will have applications
in merchandizing displays, museums, theme parks, etc. Several opticalconfigurations will be presented.
FMC4 - 3
9:40

Fabrication of Special Glass-Beads Retroreflector
for Aerial Imaging by Retro-Reflection
Y. Tomiyama*, S. Suyama*, H. Yamamoto*,**,****Univ. of Tokushima, Japan**JST-CREST, Japan***Utsunomiya Univ., Japan

AIRR (Aerial Imaging by Retro-Reﬂection) enables ﬂoating LED
signage. In order to prevent blurring with ﬂoating distance, we propose
a special glass-beads retroreﬂector. We have fabricated a retroreﬂector
with glass beads whose refractive index is 2.0. As paraxial
approximation suggests, the fabricated retroreﬂector reduced beam
spread with ﬂoating distance.
Also presented in Innovative Demonstration Session (see p. 214)----- Break -----

103

FMC

Wide field of view combiners for head-up displays are reviewed and ouroriginally developed combiner using Fresnel reﬂector that acts both asa concave reﬂector for reﬂected light and a ﬂat plate for transmitted
light has been introduced.
Also presented in Innovative Demonstration Session (see p. 214)

Friday

December 5

10:45 - 12:05

Snow Hall B

FMC5: Lighting Technologies
Special Topics of Interest on Lighting Technologies
Chair:
Co-Chair:F. Shevlin, Dyoptyca, Ireland
K. Käläntär, Global Optical Solutions, Japan

FMC5 - 1
10:45

Light Guide Plate Illumination with Blue Laser andQuantum Dot Emission
F. Shevlin
DYOPTYKA, Ireland

A Blue laser diode is used to excite emission from a strip of “quantum
dot” materials at the edge of an LCD display light guide plate. Optical
efficiency is improved by reﬂecting emission that would otherwise be
lost. A phase randomizing deformable mirror is used to minimize
speckle noise.
Also presented in Innovative Demonstration Session (see p. 214)
FMC5 - 2
11:05

Design and Perception of an Edge Lit HDR Display
P. Cirkel, L. Penninck
TP Vision, Belgium

Advances in LED efficiency and thermal conductivity were used todesign an HDR display with an edge-lit backlight. The advantage ofimprovements in thermal conductivity is depending on the backlight
design. An HDR TV set was made, and compared to a wide color
gamut TV in a perception test.
FMC5 - 3
11:25

Predicting Color Appearance under Non-Uniform
Lighting Environments
H.-C. Li*, P.-L. Sun*, S.-Y. Chang*, R. Luo*,***Nat. Taiwan Univ. of S&T, Taiwan**Univ. of Leeds, UK

Two psycho-visual experiments were conducted to investigate the color
appearance under non-uniform surround conditions. A weighted
function is derived to estimate the luminance of adapting field for a
CIECAM02 based color appearance model to improve its color
prediction.
FMC5 - 4
11:45

The Design of Anti-Glare Lens Applied to Direct
LED Panel Lighting
J.-W. Pan, Y. K. Hsu, C. W. ChiangNat. Chiao Tung Univ., Taiwan

The anti-glare lens had been proposed to reduce the glare effect andenhance the illumination uniformity for indoor lighting. Compared withtraditional panel light with Lambertian intensity distribution, the Unified
Glare Ratio (UGR) had been controlled at 17.3 and the uniformity had
been enhanced 28%.
----- Lunch ----104

Friday

December 5

13:30 - 14:50

Snow Hall A

FLX6/FMC6: Flexible Materials and Devices
Chair:
Co-Chair:Y. Mishima, FUJIFILM, Japan
T. Tomono, Toppan Printing, Japan

FLX6/
FMC6 - 1:
13:30

Invited Flexible Substrates and Alternative
Electrodes of ITO for OLED Lighting
M. Koden, H. Kobayashi, T. Moriya, N. Kawamura,
T. Furukawa, H. Nakada
Yamagata Univ., Japan

FLX6/
FMC6 - 2
13:55

An Analysis Method of Shock Test for Flexible
Displays by Using an Image Luminance
Measurement Device
J.-M. Hsu, S.-W. Hsu, B.-J. Wen, T.-Y. Chung
ITRI, Taiwan

The objective of this study is to put forward a new analysis method ofshock test for ﬂexible displays. The study utilized an image luminancemeasurement device to inspect optical properties of ﬂexible organic
light emitting diodes before and after shock test.
FLX6/
FMC6 - 3
14:15

Plastic Substrate Technology for Flexible LCD
Z.-H. Chen, T.-H. Huang, J.-K. Lu, N. Sugiura
AU Optronics, Taiwan

Materials and handling method of plastic substrate are the key factor
for ﬂexible liquid crystal display (LCD). Different ﬂexible substratematerials and fabrication process will be discussed in this article.
Furthermore, 3.5-in. ﬂexible LCD was demonstrated using optical clear
ﬁber-reinforced-plastic substrate and ﬁlm lamination followed via
mechanical peeling process.

IDW ’14 Tutorial in Japanese
Organized by SID Japan Chapter
Tuesday, December 2, 2014
Room 301, 3F
TOKI MESSE Niigata Convention Center
Detailed information is available on
http://www.sid-japan.org
105

FMC

“Flexible substrates with alternative electrode of ITO for organic
electronics” is being developed in the “Yamagata University Organic
Thin Film Device Consortium”, in which 21 companies participate. The
current status and some of the developmental results on ﬂexible
substrates and alternative electrodes of ITO for OLED lighting arereviewed.
Also presented in Innovative Demonstration Session (see p. 213)

Friday
FLX6/
FMC6 - 4L
14:35

December 5
Roll-to-Roll Planarized Stainless Steel Foil for OLED
Substrate
N. Yamada, H. Kobayashi*, S. Yamaguchi,
J. Nakatsuka**, K. Nose, K. Uemura, M. Koden*,
H. Nakada*
Nippon Steel & Sumitomo Metal, Japan*Yamagata Univ., Japan**Nippon Steel & Sumikin Materials, Japan

Roll samples of planarized stainless steel foil were produced bycontinuously forming inorganic-organic hybrid layer. The planarization
layer endowed both surface ﬂatness and electric insulation to thestainless steel foil, resulting in successful fabrication of OLED
prototypes on the roll-to-roll planarized stainless steel foil.
Author Interviews and Demonstrations
16:45 – 17:45
Supporting Organizations:Japan Electronics Packaging and Circuits Association
Japan Society of Colour Material
RadTech JapanThe Japanese Research Association for Organic Electronics
Materials
The Japanese Society of Printing Science and Technology
The Society of Photography and Imaging of JapanThe Technical Association of Photopolymers, JapanThe 50th Anniversary Speech of PDPs

“Summing Up of the PDP History
and a Peek at Plasma
Technologies Beyond Displays”(FED4 – 1)
Friday, December 5, 2014
15:15 - 15:55
Room 302B
See page 118 for detail106Thursday

December 4Workshop on
EL Displays and Phosphors
Thursday, December 4
9:00 - 12:00

Exhibition Hall B

Poster PHp1: Phosphors
PHp1 - 1

Printing Artefacts in the Manufacture of AC
Electroluminescent Lamps
J. Silver, P. G. Harris
Brunel Univ., UK

This paper describes a number of printing artefacts that can be
detrimental to the manufacture of printed electronic devices and is
illustrated with reference to the manufacture of a.c. electroluminescentlamps.
PL and EL Characteristics in UV to Blue-Green
Emitting Bi-Activated Y2O3-Based Oxide Phosphor
Thin Films Prepared by Magnetron Sputtering
T. Miyata, S. Abe
Kanazawa Inst. of Tech., JapanUV and blue-green electroluminescence were observed from Biactivated Y2O3-based oxide phosphor thin films. Intense UV EL
emissions were observed from thin-film electroluminescent (TFEL)
devices fabricated using Y3Al5O12:Bi thin film. The highest UV EL
intensity was obtained in TFEL devices using Y3Al5O12:Bi emitting layer
with Bi content of approximately 2.4 at.%.
PHp1 - 3

Local Structural Effect on Emission Characteristics
of Organic-Inorganic Hybrid Phosphor Made from
Malic Acids and APTES
A. Kato, K. Hasegawa, K. Komatsu, T. Kawase
Nagaoka Univ. of Tech., Japan

Organic-inorganic hybrid phosphors made from malic acids and
APTES which shows strong green emission were synthesized by solgel method. The emission wavelength and intensity were found todepend on heating treatment temperature, which may be due to local
structural change. This phosphor has a potential for rare-earth free UVLEDs application.

107

PH

PHp1 - 2

Thursday
PHp1 - 4

December 4Synthesis of Y2WO6:Eu Nano-Rod Phosphor for
Local Field Enhanced Inorganic Electroluminescent
DevicesA. Kato, S. Matsumoto, D. Imai
Nagaoka Univ. of Tech., JapanY2WO6:Eu3+ nano-rod phosohors with diameter of ~100 nm weresynthesized by ﬂux method using LiCl ﬂux. The emission starting
voltage of the EL device using these nano-rods was found to belowered, which may be due to local field enhanced effect, and have apotential for inorganic EL device applications.
PHp1 - 5

Suppressed Sublimation of Organic Dye NanoParticles Embedded in Sol-Gel Derived Silica Glass
T. Yamaki, T. Kurabayashi, T. Fukuda, N. Kamata,Z. Honda
Saitama Univ., Japan

9,10-diphenylanthracene and pyrene nanoparticles dispersed inaqueous solutions were obtained by the reprecipitation method, andthe sublimation of these materials were successfully suppressed byforming nanoparticle. In addition, further improved stability was realizedby embedding in the silica glass thin film fabricated by the sol-gel
process.
PHp1 - 6L

Observation of Upconversion Emission in ZnO-TiO2
with Yb2O3 and Er2O3 Crystal Powders on Excitation
Using 980 nm Radiation
K. Ohyama, T. Nonaka, T. Kanamori, S. Yamamoto
Ryukoku Univ., Japan

Among several liquid-phase methods for the production of
upconversion phosphors, the MOD method was studied. As a result ofpreparing upconversion phosphor using the MOD method, a strong
orange upconversion luminescence was obtained when the mixing
ratio was Ti:Zn:Yb:Er = 1:1:0.06:0.02.
PHp1 - 7LInterdigital Electrodes Technologies for Distributed
Inorganic EL Displays
T. Nonaka, Y. Uraoka*, N. Taguchi**, S. Yamamoto
Ryukoku Univ., Japan*Nara Inst. of S&T, Japan**Image Tech, JapanWe deposited comb-shaped metal electrodes with narrow gaps on a
glass substrate and succeeded in achieving a high electric field
intensity. We used a comb-shaped metal (Au) electrode sample and a
comb-shaped ITO electrode sample.

108Thursday
PHp1 - 8L

December 4
Optical Properties of Heavily Mn-Doped ZnS:Mn2+
Phosphors
K. Park, G. Deressa, T. Kim*, J. Kim*, J. Kim
Pukyong Nat. Univ., Korea*Lumimicro, Korea

Heavily
doped
ZnS:Mn2+phosphors
exhibitedastrongphotoluminescence excitation at 465 nm peak from the forbidden
6
A1(6S)→4A1(4G)/4E(4G) transitions of Mn2+ ions and a strong
photoluminescence at 582 nm peak. It can be explained in terms of
Mn-Mn interaction.
PHp1 - 9L

Flexible AC Powder Electroluminescent Device
Based on Silver Nanowire ElectrodeG. Deressa, K. Park, H. Jeong, S. Lim, D. Kim, J. Lee,
J. Park, J. Park*, J. Kim
Pukyong Nat. Univ., Korea*AIDEN, Korea

9:00 - 12:00

Exhibition Hall B

Poster PHp2: Phosphors for Lighting Application
Special Topics of Interest on Lighting Technologies
PHp2 - 1

Study on Luminescence Property of
Ba3(Sc1-XHox)4O9 Phosphors
K. Sugimoto, S. W. Kim, T. Ishigaki, K. Uematsu, K. Toda,
M. SatoNiigata Univ., Japan

Blue light excitable green emitting Ba3(Sc1-xHox)4O9 phosphors weresynthesized in a single phase form by a conventional solid-state
reaction method. These phosphors showed a green emission under theblue light excitation (455 nm) and the main green emission peakobserved at 555 nm corresponding to 4f-4f transition of Ho3+.
PHp2 - 2

The Effect of Sr2-XSi3O2N4: xEu2+ Synthesizing byDifferent Phase Si3N4 on Luminescence
Characteristic
C.-H. Chiang, T.-S. Zhan, S.-Y. Chu
Nat. Cheng Kung Univ., Taiwan

In this paper, the dependence of the raw material of Si3N4 with different
phase on the luminescence of Sr1.9Si3O2N4: 0.1Eu2+ phosphors were
investigated. Itʼs obvious that the emission peak at 530 nm is enhanced
at 450 nm excitation light source by using β-phase Si3N4.
109

PH

Silvernanowire(Ag
NW)
electrode-basedAC
powderelectroluminescent device (ACPELD) is demonstrated. Ag NW
electrode with the transparency of 90% and sheet resistance of 50
ohm/sq was bar-coated, and the phosphor/dielectric layers werescreen printed. The EL intensity and charge density were as high asthat for ITO-based ACPELD.

Thursday
PHp2 - 3

December 4
A Novel Reddish Orange-Emitting BaLa2Si2S8:Eu2+
Thiosilicate Phosphor for White Light-Emitting
Diodes
S.-P. Lee, T.-M. Chen
Nat. Chiao Tung Univ., Taiwan

A novel reddish orange-emitting (Ba1­xEux)La2Si2S8 thiosilicate
phosphor was synthesized and evaluated for potential application inwhite light LEDs. The Eu2+-doped thiosilicate phosphor can be excited
by UV to blue light and shows reddish orange broadband emission. The
preparation, spectroscopic characterization, decay lifetime, and related
LED device data are also presented.
----- Lunch ----15:15 - 16:25

Room 302 B

PH1: Phosphors for General
Chair:
Co-Chair:J. Silver, Brunel Univ., UK
T. Miyata, Kanazawa Inst. of Tech., Japan

PH1 - 1:
15:15

Invited A New Luminescence Material for Displays
and Sensing
W. Chen, L. Ma
Univ. of Texas at Arlington, USA

Cu-Cysteamine complex is a new material for displays and sensing
technologies. In addition to its photoluminescence, the Cu-Cy emits
intensive X-ray luminescence which is stronger than that ofsemiconductor quantum dots CdTe and ZnS:Mn as well as PVT/PPO
organic scintillators. It has a good potential for lighting and radiation
detection.
PH1 - 2:
15:40

Invited Advanced Nanophosphors Synthesized byMicroreaction Method and Their Application to
Wavelength Conversion Layer
H. Okura, K. Ohmi*
Merck, Japan*Tottori Univ., Japan

A novel solution combinatorial system based on microreaction method
has been developed. The Bi3+,Eu3+ co-activated yttrium vanadate(YVO4) red nanophosphor with high quantum efficiency has beensynthesized using the microreactor. We have confirmed theimprovement to the positive data by using the wavelength conversion
layer for silicon solar cells.

110Thursday
PH1 - 3
16:05

December 4Synthesis of LaPO4:Ce3+,Tb3+ Phosphors by Solid
Hydrate Thermal Processing
S. W. Kim, T. Kaneko, K. Toda, K. Uematsu, T. Ishigaki,
M. Sato, J. Koide*, M. Toda*, Y. Kudo*
Niigata Univ., Japan*N-Luminescence, Japan

Green-emitting LaPO4:Ce3+,Tb3+ phosphors were synthesized by our
original solid hydrate thermal processing. The Ce3+ and Tb3+ doped
LaPO4 phosphors with monoclinic structure were obtained in a single
phase form. These phosphors exhibit green emission assigned to theenergy transition from 5D4 to 7FJ (J = 6, 5, 4, and 3) of Tb3+.
----- Break ----17:00 - 18:05

Room 302 B

PH2: Phosphor Applications
R.-J. Xie, NIMS, JapanK. Wani, TAZMO, JapanPH2 - 1:
17:00

Invited Development of a UV Light Source Using
Pr:LuAG Thin Film Target Pumped by Electron BeamPH

Chair:
Co-Chair:N. Ichikawa, K. Ikeda, Y. Honda, H. Taketomi, K. Kawai,T. Suzuki
Hamamatsu Photonics, Japan
Pr:LuAG thin film was deposited by PLD. Pumping this film by electron
beam, it was applied for UV light source with around 300 nm.
PH2 - 2
17:25

Fabrication of Luminescent Thin Film for Electron
Beam Excitation Assisted Optical Microscope
T. Furukawa, S. Kanamori*, M. Fukuta*, Y. Nawa,
H. Kominami*, Y. Nakanishi*, A. Sugita*, W. Inami,
Y. Kawata
JST, Japan*Shizuoka Univ., Japan

We fabricated ZnO luminescent thin films for nanometric light spot ofhigh spatial resolution optical microscopy based on electron beam
excitation. The ZnO film annealed at 1000 C in N2 had highcathodoluminescence intensity compared with as-deposited film, andthe film provided nano-imaging beyond the diffraction limit using the
microscopy.

111

Thu./Fri.

December 4/5

PH2 - 3
17:45

Growth, Structure, and Cathodoluminescence
Property of ZnO Nanorods Prepared with Low
Temperature Reducing Annealing
C. Li, X. Li, S. Hou
Kochi Univ. of Tech., JapanZnO nanorods were fabricated in a novel reducing annealing methods
at a low temperature process. The structural and cathodoluminescence
properties of ZnO nanorods were investigated. The strong
cathodoluminescence emission peak centered at 492 nm was obtained
from well-aligned ZnO nanorods.
Author Interviews and Demonstrations
18:30 – 19:30

Friday, December 5
9:00 - 10:25

Room 302 A

PH3: Phosphors for Lighting Application
Special Topics of Interest on Lighting Technologies
Chair:
Co-Chair:W. Chen, Univ. of Texas at Arlington, USA
K. Ohmi, Tottori Univ., Japan

PH3 - 1:
9:00

Invited Quantum Rods Optical Film for Backlight
D. Glozman, E. Shaviv, H. Arbell, Y. Bonfil, U. Banin*,
S. Amir
Qlight Nanotech, Israel*Hebrew Univ. of Jerusalem, Israel

Semiconductor quantum rods offer unique opportunities in the field of
displays. Qlight is developing a film for LCD backlight enabling wide
color gamut and the design of an energy-efficient polarized backlight.
Another application being developed is QPixel, novel display
technology based on electric field modulation of the quantum rods
emission.
PH3 - 2
9:25

Thermal Degradation of Green-Emitting
SrSi2O2N2:Eu2+
C. Wang, R.-J. Xie*, T. Takeda*, T. Suehiro*, N. Hirosaki*
Univ. of S&T of China, China*NIMS, Japan

SrSi2O2N2:Eu2+ is a very promising green phosphor for solid state
lighting, which has a high quantum efficiency and small thermal
quenching. However, this phosphor cannot be practically used because
the degradation of white LEDs using it over time is not acceptable. In
this work, we investigated the thermal degradation and its mechanismof SrSi2O2N2:Eu2+.

112

Friday
PH3 - 3
9:45

December 5
Wireless Power Transmission Method of a Powder
EL Sheet Device
K. Wani, T. Kanda, E. Hashimoto
TAZMO, Japan

A thin and ﬂexible EL lighting device was driven by a wireless powersource. There is no other electrical component in the EL lighting unit
except a planar secondary coil, which makes the lighting unit almost as
thin as the EL sheet only.
Also presented in Innovative Demonstration Session (see p. 214)
PH3 - 4
10:05

Studies of Electroluminescence from Individual
Phosphor Particles
J. Silver, P. G. Harris
Brunel Univ., UK

Author Interviews and Demonstrations
16:45 – 17:45
Supporting Organizations:
Phosphor Research Society, The Electrochemical Society of JapanThe 125th Research Committee on Mutual Conversion between
Light and Electricity, Japan Society for Promotion of Science

EXHIBITION
12:40 – 18:00 Wednesday, Dec. 3, 2014
10:00 – 18:00 Thursday, Dec. 4, 2014
10:00 – 14:00 Friday, Dec. 5, 2014
Exhibition Hall B
TOKI MESSE Niigata Convention CenterFree admission with your registration name tag
113

PH

Measurements of the radiance of powder a.c.electroluminescentdevices have in the past been carried out on lamps containing large
numbers of particles. In this work studies of individual ACEL particles
of different sizes and in a variety of environments have been made tounderstand how they behave.

Friday

December 5

Workshop on Field Emission Displays,
CRTs and Plasma Displays
Friday, December 5
9:00 - 9:05

Room 302 B

Opening
Opening Remarks
9:00
H. Mimura, Shizuoka Univ., Japan

9:05 - 10:35

Room 302 B

FED1: Novel Devices and Applications
Chair:
Co-Chair:Y. Gotoh, Kyoto Univ., JapanF. Wakaya, Osaka Univ., Japan

FED1 - 1:
9:05

Invited High Resolution Optical Imaging for Living
Cells with Electron Beam Excitation
Y. Kawata*,**, Y. Nawa*, W. Inami*,***Shizuoka Univ., Japan**JST-CREST, Japan

We present optical nanoimaging system and demonstrate theobservation of biological specimens without any stained process. The
electron-beam excited assisted (EXA) optical microscope has a few
tens nanometer spatial resolution laterally and is possible to observe
dynamic behaviors of specimens in various surroundings such as air or
liquid.
FED1 - 2
9:35

Electrostatic-Focusing Spindt-Type FEA with
Improved Electron-Beam Extraction Efficiency for
FEA-HARP Image Sensor
Y. Honda*,**, M. Nanba*, K. Miyakawa*, M. Kubota*,
M. Nagao***, N. Egami*****NHK, Japan**Shizuoka Univ., Japan***AIST, Japan****Kinki Univ., JapanA new electrostatic-focusing Spindt-type field emitter (FE) for a fieldemitter array high-gain avalanche rushing amorphous photoconductor
image sensor was designed. Simulation results showed that the newelectrostatic-focusing FE can improve electron-beam extraction
efficiency.

114

Friday
FED1 - 3
9:55

December 5
A High-Sensitivity Photodetector Made ofAmorphous Selenium and Nitrogen-Doped Diamond
Cold CathodeT. Masuzawa, I. Saito*, M. Onishi*, T. Ebisudani*,J. Ochiai*, T. Yamada**, Y. Neo, H. Mimura,
D. H. C. Chua***, K. Okano*Shizuoka Univ., Japan*Int. Christian Univ., Japan**AIST, Japan***Nat. Univ. of Singapore, Singapore

We present a vacuum-tube type photodetector with extremely highsensitivity and potential imaging capability. A unique carrier
multiplication effect and high resistivity of amorphous selenium has
been utilized to enhance nominal quantum efficiency up to 10 times aslarge as theoretical absorption limit.
FED1 - 4
10:15

Photoassisted Field Emission from P-Type Silicon
FEAs
H. Shimawaki, M. Nagao*, T. Yoshida*, Y. Neo**,
H. Mimura**, F. Wakaya***, M. Takai***
Hachinohe Inst. of Tech., Japan*AIST, Japan**Shizuoka Univ., Japan***Osaka Univ., Japan----- Break ----10:45 - 11:45

Room 302 B

FED2: Fabrication Processes and New Materials
Chair:
Co-Chair:H. Mimura, Shizuoka Univ., Japan
H. Shimawaki, Hachinohe Inst. of Tech., Japan

FED2 - 1
10:45

Fabrication and Emission Characteristics of Ni andMo Spindt-Type FEAs with Volcano-Structured
Focusing Electrode
M. Nagao
AIST, Japan

We have proposed new fabrication of Spindt-type FEA with volcanostructured double-gate. Firstly, Ni was selected as an emitter material
because of easy fabrication. Emission and focusing characteristics ofthe double gate Ni FEA were measured. Secondly, fabrication process
was improved to make a Mo tip toward a higher reliability.

115

FED

We investigate the photoassisted electron emission from a p-typesilicon FEA under illumination of laser lights. The increase of theemission current under light illumination is proportional to the emission
current in the dark. The significant inﬂuence of the polarization inphotoassisted emission for each wavelength was not observed.

Friday
FED2 - 2
11:05

December 5Computer Simulation of Electron Beam Trajectories
in Double-Gated Spindt-Type FEAs
Y. Gotoh, H. Tsuji, M. Nagao*
Kyoto Univ., Japan*AIST, Japan

Computer simulations of the trajectories of the electron beams
extracted from the double-gated Spindt-type FEAs were performed.
The current density distribution of each beamlet was obtained, taking
the estimated field value and the analytical relationship into
consideration.
FED2 - 3
11:25

Enhanced Field Emission of CuO Nanowire Arrays
by Coating of CNT Network Film
H. Hu, D. Zhang, J. Lin, F. Li, T. Guo
Fuzhou Univ., China

Vertically aligned CuO nanowires were wrapped with CNT networks to
improve the field emission properties. The effects of CuO morphology
and CNT coverage on the FE characteristics were investigated. With
the CNT-coating, the turn-on field of CuO array cathodes was dropped
from 6.6 V/μm to below 1.2 V/μm.
FED2 - 4

Withdrawn----- Lunch -----

13:30 - 14:50

Room 302 B

FED3: FE Mechanisms and PDP Protective Layers
Chair:
Co-Chair:

M. Nagao, AIST, Japan
H. Kajiyama, Tokushima Bunri Univ., Japan

FED3 - 1
13:30

Observation of Fringelike Emission Pattern inMagnetic Field
Y. Yamada, S. Abo, K. Murakami*, F. Wakaya, M. Abe,M. Takai
Osaka Univ., Japan*Univ. of Tsukuba, Japan

Experimentally observed shift distance of the emission pattern from theelectron-beam-deposited Pt emitter by magnetic field was larger than
expected one using Lorentz force, suggesting that the origin of thefringelike pattern was quantum mechanical interference.

116Friday
FED3 - 2
13:50

December 5Work Function Measurements of Tungsten Surface
Modified by Praseodymium Oxide by Using Field
Emission Microscopy and Retarding Method
T. Kawakubo, K. Kanbara, T. Kitani, H. Nakane*
Kagawa Nat. College of Tech., Japan*Muroran Inst. of Tech., Japan

It is well known the work function of tungsten (100) surface is reduced
after application of a very thin surface layer of transition metal andheating in an oxygen environment. We measured the work function oftungsten surface modified by Praseodymium oxide by using FEM andretarding method.
FED3 - 3
14:10

High-Intensity Deep-UV Radiation and Exo-Electron
Emission of MgO Powders for AC PDPs
M. Sakai*,**, H. Asano*,**, Y. Fukui*, T. Tsujita*,**,
M. Nishitani*,**, H. Kimiya*, R. Murai*, M. Kitagawa***Panasonic, Japan**Osaka Univ., Japan

FED3 - 4
14:30

Electron Storage by Photochromic Transition of
Oxide Nanoparticle
H. Kajiyama, Y. Matsuura, M. Maekawa*, K. Uchino*,
K. Takata**, S. Inoue***
Tokushima Bunri Univ., Japan*Kyushu Univ., Japan**Kansai Univ., Japan***Hiroshima Univ., JapanA ZnSiO nanoparticle is synthesized using a VHF plasma assisted
chemical vapor deposition apparatus. The nanoparticles with selforganized structure transform to photochromic (PC) states by UV
irradiation. The PC transition by electron storage occurs in the ZnO partof nanoparticles. The stored electrons are thermally stable up to 550 K.
----- Break -----

117

FED

The electron emission mechanism of the MgO powders developed forthe protective layer of the AC plasma display panels is investigated.
The photoluminescence decay measurements show that their electron
traps are very stable. The thermally stimulated exo-electron emission
from the developed protective layer shows the improvement of theemission property.

Friday

December 5

15:15 - 16:50

Room 302 B

FED4: Summing Up of PDP History
Chair:
Co-Chair:L. Weber, Consult., USA
T. Shiga, Univ. of Electro-Commun., Japan

FED4 - 1:
15:15

Invited Summing Up of the PDP History and a Peek
at Plasma Technologies Beyond Displays
S. Mikoshiba
Univ. of Electro-Commun., Japan

50 years of plasma display history, from the rise to the decline of the
PDP business, will be analyzed, considering the intrinsic nature of gas
discharges. The decline was due not to the technological maturity, but
to business requirements. Also speculated are the future plasma
technologies beyond displays.
FED4 - 2
15:55

A Flexible Luminous Array Film as a Radiation Area
Selectable Hg-Free Ultra-Narrow Band UVB Light
SourceB. Guo, K. Awamoto, H. Hirakawa, T. Nishimoto*
Plexie, Japan*Yumex, Japan

A ﬂexible Luminous Array Film as a radiation area selectable Hg-freeultra-narrow band UVB light source for skin treatment purpose isintroduced. Compared with conventional mercury lamp and UV-LEDs, it
has various merits, such as radiation area selectable, Hg-free, thin andﬂexible (~1 mm thickness) and ultra-narrow spectral bandwidth (~1nm).
FED4 - 3
16:15

Photosynthesis Promotion by Pulsed Light from an
AC-PDP Based Fluorescent Film
H. Kajiyama, T. Ohata, I. Kanmai, S. Funai, T. Kono,
S. Nagahara, T. Matsuura
Tokushima Bunri Univ., JapanAn ac-plasma based ﬂuorescent film is used as a light source of plant
photosynthesis. The effect of pulsed photoirradiation on thephotosynthesis of a leaf vegetable is evaluated. It is confirmed that thestem growth rate per one photon increases by the pulsed
photoirradiation with a lower frequency.

118

Friday

December 5

FED4 - 4L
16:35

Power Reduction Method for PDP Address Circuit
Using Address Data Smoothing Based on Visual
Masking Effect
T. Shiga, M. Seki, M. Fujii
Univ. of Electro-Commun., JapanAn address power of PDPs is reduced while maintaining the image
quality by choosing the smoothing area of address data based on thevisual masking effect. The smoothing area is extracted using newly
proposed index called the luminance-based segment. The estimatedpower reduction rate is about 50%.
Author Interviews and Demonstrations
16:45 – 17:45
Supporting Organizations:
JSPS 158th Committee on Vacuum Nanoelectronics
Plasma Display Technical Meeting

FED

Innovative Demonstration Session
by Oral and Poster Presenters

Live demonstrations of emerging information
display technologies
16:45 – 19:30 Thursday, December 4, 2014
12:30 – 15:15 Friday, December 5, 2014
Exhibition Hall B
See Page 212 - 215 for details

RECEPTION
Wednesday, December 3, 2014
19:00 – 21:00
Room “Continental” (4F)
Hotel Okura Niigata
See page 12 for details

119Wednesday

December 3

Workshop on OLED Displays andRelated Technologies
Wednesday, December 3
14:00 - 15:20

Snow Hall B

OLED1: Advanced OLED Technologies (1)Chair:
Co-Chair:T. Wakimoto, Merck, JapanT. Uchida, Tokyo Polytechnic Univ., Japan

OLED1 - 1
14:00

Flexibility and Reliability Improvement for Foldable
OLED
S.-T. Yeh, G. Chen, C.-H. Tsai, Y.-H. Peng, J.-C. Ho,
C.-C. Lee
ITRI, Taiwan

According to the stress simulation results, we developed the efficientpassivation configurations to improve the bending ability of ﬂexible
AMOLED. This design equips our display with obvious bending
performance even after the thousands times bending processes, andalso provides the satisfied life time exhibition in ﬂexible AMOLED panel.
OLED1 - 2
14:20

An Ultrathin AMOLED Integrated with On-Cell Touch
Sensor for Flexible Displays
K.-T. Chen, S.-W. Chen, S.-A. Chen, P.-H. Wang,
C.-C. Chang, S.-H. Lee, C.-W. Jung, M.-H. Yeh,
K.-J. Chen, J.-Y. Yan, J.-C. Ho, C.-C. Lee
ITRI, Taiwan

This paper reveals a 6-in. ﬂexible sensitive devices consisting of acapacitive touch sensor integrated on thin-film-encapsulated activematrix organic light-emitting diodes (AMOLEDs). A folding test was
performed repeatedly. The display survived the folding test (100,000
times) with a curvature radius of 7.5 mm.
OLED1 - 3
14:40

Black Screen for High Contrast Smart Window
AMOLED Display
D. C. Choe, G. W. Kim, R. Lampande, J. H. Kwon
Kyung Hee Univ., Korea

We fabricated an ECD whose area of the ECD is 3 x 3 cm2 and thefabricated ECD shows response time of less than 3 s. Absorbance of
the ECD is 1.7 at 600 nm. We combined the ECD with red TOLED
showing transmittance of 68% at 620 nm.

120Wednesday
OLED1 - 4
15:00

December 3
High-Transparent 4.65-in. QHD AMOLED Display
with 21% Transmittance
C.-T. Lee, Y.-Y. Huang, C.-C. Tsai, C.-C. Kuo, C.-H. Chiu,
J.-H. Huang, S.-F. Liu, Y.-H. Cheng, C.-L. Chen,
C.-T. Liang, W.-C. Yen, J.-S. Huang, Y.-W. Chiu, Y.-W. Liu
Chunghwa Picture Tubes, Taiwan

Display technology advances, from thin to "transparent" new forms ofsustainable development. AMOLED panel cathode and anode use
transparent materials. Furthermore, we demonstrate 4.65-in. AMOLED
display, the module transparency of the AMOLED display is about 21%transmittance which can realize transparent and thinner portabledevice.
----- Break ----15:45 - 17:00

Snow Hall B

OLED2: Advanced OLED Technologies (2)Chair:
Co-Chair:Y. Kijima, Sony, Japan
S. Naka, Univ. of Toyama, Japan

OLED2 - 1
15:45

OLED on Silicon for Sensor Applications
M. Thomschke, M. Jahnel, B. Beyer, K. Fehse, U. Vogel
Fraunhofer COMEDD, Germany

OLED2 - 2
16:05

Viewing Angle Spectral Analysis of OLED Display
Light Emission Properties
P. M. Boher, T. Leroux, T. Bignon, V. Collomb-Patton
ELDIM, France

The angular emission of OLED displays is measured using a
multispectral Fourier optics viewing angle system. The emission of red,green and blue states presents complex spectral changes versus
angle. These changes probably related to interference fringes inside
the OLED layered structure have small impact on color and luminanceproperties.

121

OLED

We present two different approaches of OLED devices that are suitableforlab-on-a-chip
applications.
These
includenear
UVelectroluminescence (EL) and optically filtered green light to spectrally
separate excitation from sample emission peaks. Both device
architectures can be used for large-area deposition as well as
integration onto Silicon-CMOS backplanes.

Wednesday
OLED2 - 3
16:25

December 3
Natural Stereoscopic Effect Achieved by HighResolution OLED Display
Y. Yanagisawa, H. Ikeda, D. Kubota, Y. Hirakata,
S. Yamazaki, M. Hirose*, M. Kasuga**,***
Semiconductor Energy Lab., Japan*Univ. of Tokyo, Japan**Sakushin Gakuin Univ., Japan***Utsunomiya Univ., Japan

Statistical verifications reveal that organic light-emitting diode displays
can more easily obtain a natural stereoscopic effect than liquid crystal
displays. The use of curved ﬂexible organic light-emitting diode displays
and/or a frame placed in front of a display facilitates enhancement of
the stereoscopic effect.
OLED2 - 4L Transparent Amorphous Oxide Semiconductors for
16:45
Efficient and Stable Electron Transport Layers in
Organic LEDs and Lightings
H. Hosono*,***, E. Matsuzaki*,***, Y. Toda*,***, J. Kim*,
T. Kamiya*, S. Watanabe**,***, N. Nakamura**,N. Miyakawa***Tokyo Inst. of Tech., Japan**Asahi Glass, Japan***Japan S&T Agency, Japan

Proposed for OLEDs is an electron transport material, which is atransparent AOS and has a mobility of ~1 cm2/Vs and a work function
φ of 3.5 eV. The usage with a-C12A7:e- (φ=3.0 eV) gives a higher
injection efficiency than that of LiF/Al and is applicable also for inverted
stacking.
Author Interviews and Demonstrations
17:15 – 18:15

IDW Best Paper AwardIDW Outstanding
Poster Paper Award
These awards will go to the most outstanding papers
selected from those presented at IDW ’14.
The 2014 award winners will be announced on the
IDW website: http://www.idw.or.jp/award.html
122Thursday

December 4
Thursday, December 4

9:00 - 10:25

Snow Hall B

OLED3: OLED Process Technologies
Special Topics of Interest on Printed Electronics
Chair:
Co-Chair:T. Shimizu, NHK, JapanT. Komatsu, Panasonic, Japan

OLED3 - 1: Invited OLED Device Fabrication by Ink-Jet Printing
9:00
Technology
T. Sonoyama, M. Uchida, T. Sago, S. Watanabe,
K. Ishida, M. Ito, M. Ishida, M. Yamada, Y. Okawa,S. Tanabe, H. Kiguchi
Seiko Epson, Japan
Here we present the result of OLED device fabricated by Ink-jet
method. We use a structure in which Red and Green EML arepatterned by Ink-jet and Blue EML is formed by vapor deposition. We
can make a good emission profile by improving uniformity of HIL and
EML.
OLED3 - 2: Invited Important Technologies of Ink Jet System for
9:25
OLED Display Fabrication
T. Hayashi, K. Oshima, S. Takei*, A. Shimamura,
Y. Konta, S. Tanabe*Tokyo Electron, Japan*Seiko Epson, Japan

OLED3 - 3
9:50

UV-Activated Transparent Desiccant for Practical
OLED Encapsulation Process
H. Katsui, T. Miyasako, T. Arai, M. Takahashi,
N. Onimaru, N. Takamatsu, T. Yamamura, K. Konno,
K. Kuriyama
JSR, Japan

We have developed a new-type desiccant material for practical OLED
encapsulation process. Since a water absorbent function was activatedvia UV irradiation, we could handle the material in atmosphere until justbefore UV-sealing process. Such property would offer processsimplicity and low equipment costs in OLED encapsulation process.

123

OLED

We reported the advantages of ink jet printing (IJP) and the important
technologies for MURA/Defect free panel fabrication by IJP. The swathmura caused by IJ head variations, the ink mixed color issue in dry
process and the oval-mura issue in baking process were alreadyresolved by IJP equipment technologies.

Thursday

December 4

OLED3 - 4L Flexible AMOLED Display with Self-Aligned Top
10:10
Gate Oxide TFTs and Novel Barrier Structures
A. Kanegae, E. Kobayashi, Y. Honda, G. Sakamoto,
Y. Isaji, Y. Tsutsui, I. Ueno, T. Ukeda, K. Okada, Y. Izawa,A. Kamitani, T. Mifune, K. Morita
Panasonic, Japan
We have developed ﬂexible AMOLED displays with self-aligned top
gate oxide TFTs and novel barrier structures. Reactive sputteredaluminum oxide is used to lower the resistivity of IGZO. Newly
developed moisture absorption barrier was also integrated. We could
successfully demonstrate the 220-ppi full-color ﬂexible AMOLED
display for the first time.
----- Break ----10:45 - 12:10

Snow Hall B

OLED4: OLED Materials (1)Special Topics of Interest on Printed Electronics
Chair:
Co-Chair:

K. Nakayama, Yamagata Univ., Japan
K. Monzen, Nissan Chem. Inds., Japan

OLED4 - 1: Invited Blue Fluorescent OLEDs for Printed Display
10:45
Applications
E. Böhm, C. Pflumm, H. Heil, S. Meyer, F. Knoch,
L.-I. Rodriguez, B. Burkhart, F. Eckes, K. Stegmaier,
H. Buchholz
Merck KGaA, Germany
A solution processable host material for ﬂuorescent blue OLEDs ispresented. The contribution of triplet-triplet annihilation and emitterorientation to the external quantum efficiency for different OLEDs isinvestigated. Both effects enhance efficiency for devices manufacturedby thermal evaporation. This is not the case for solution processed
OLEDs.
OLED4 - 2: Invited Development and Manufacture of Solution11:10
Processed White OLED Lighting Panel
T. Ogata
Mitsubishi Chem. Group S&T Res. Ctr., Japan
High-performance, solution-processable OLED materials have beendeveloped. By the joint development with Pioneer Corporation,
Mitsubishi Chemical Corporation started the mass production andshipment of OLED lighting panels with wet-processed platform andlight emitting layers, which allow to reduce the manufacturing cost thanconventional modules by vapor deposition process.

124Thursday
OLED4 - 3
11:35

December 4
The Soluble Hole Injection Materials and the Inks
Applicable to OLED Devices
N. Otani, H. Koga, S. Moriyama, T. Endo, N. Nakaie,
K. Monzen
Nissan Chem. Inds., JapanWe are developing the soluble hole injection materials and the ink,
named ELsource that can be used as hole injection layer in OLED
devices. Optimization of ink formulation applicable to wet coatingprocess and new hole injection material with higher transmittance arereported.
OLED4 - 4L Triplet-Energy Control of PAHs by BN Replacement
11:55
for Development of Ambipolar Host Materials for
PHOLEDs
T. Hatakeyama, T. Ikuta*, S. Hashimoto**, K. Shiren*,
S. Nakatsuka, J. Ni*, M. Nakamura**
Kwansei Gakuin Univ., Japan*JNC PetroChem., Japan**Kyoto Univ., JapanThe triplet-energy control of polycyclic aromatic hydrocarbons (PAHs)
was achieved by replacing the CC unit with a BN unit. The PAH
containing the BN unit, 4b-aza-12b-boradibenzo[g,p]chrysene, showeda large ET value and ambipolar carrier-transport abilities and enable us
to build phosphorescent organic light-emitting diodes of highperformance.
----- Lunch -----

13:30 - 16:30

OLED

Author Interviews and Demonstrations
18:30 – 19:30

Exhibition Hall B

Poster OLEDp1: OLED Poster
Special Topics of Interest on Lighting Technologies
OLEDp1 - 1 Flexible Hybrid White Light Emitting Diodes Basedon Small Molecules and Quantum Dots
W. Wu, F. Li, H. Hu, J. Lin, T. Guo
Fuzhou Univ., China
A ﬂexible hybrid white light emitting diode, in which the QDs acted as
an orange emitter and organic small molecules as the blue emitter in a
multilayered structure was fabricated. The device could produce whitelight emission and the current efficiency has a maximum of 0.97 cd/A.

125

Thursday

December 4

OLEDp1 - 2 Novel Phosphorescent Host Material for Tunable
Hybrid White OLED Devices
H.-L. Huang, B. Balaganesan, H.-M. Kuo, B.-W. Xie
eRay Optoelect. Tech., Taiwan
The novel phosphorescent host for phosphorescent yellow dopant was
designed and prepared with easy scale-up reaction procedures. The
hybrid WOLED can be tuned from warm white 30 lm/W@CIE(0.42,0.49), 21 lm/W@CIE(0.39, 0.45) to cold white 15 lm/W@CIE(0.32,
0.39) under different thickness of the blue layer.
OLEDp1 - 3L Synthesis Yellow and Green Color Iridium(III)Complexes Containing Thieno[3, 2-C]pyridine
Functional Group for Organic Light Emitting DiodeC. A. Wu, J. S. Lin, M. H. Chang, P. C. Liu, M. R. Tseng
ITRI, Taiwan
Thieno[3, 2-C]pyridine based OLED dopants were successfully
prepared by our research group. These phosphorescent dopants
showed excellent device performances. The yellow and green color
devices revealed the EQE of 21.02, 13.6% and current efficacy of 67.6,
48.8 cd/A and power efficacy of 38.6, 30.6 lm/W at 1000 nits.
OLEDp1 - 4L Blue Top-Emissive Organic Light-Emitting Diodes
on Stainless SteelJ. Shin, E. Jung, S. H. Lim, S. M. Cho
Sungkyunkwan Univ., Korea
We have fabricated blue top-emissive organic light-emitting diodes
using stainless steel substrate and investigated the characteristics ofthese OLEDs compared with glass-based OLEDs that have samestructure. The angle dependency of OLEDs on stainless steel was
found much less than that on glass.
OLEDp1 - 5L Highly-Efficient Solution-Processed Yellow Organic
Light-Emitting Diodes
H.-C. Yeh, T.-C. Chao, C.-H. Chou, J.-Y. Liao,
M.-R. Tseng
ITRI, Taiwan
A small molecular yellow iridium complex, PO-08, is prepared andcharacterized. A solution-processed yellow emission OLED using PO08 as dopant exhibits very high performance with a current efficacy of
45.2 cd/A and a power efficacy of 36.7 lm/W at 1,050 cd/m2.

126Thursday

December 4

OLEDp1 - 6L The Viewing Angle Dependency of Diffuser Layer on
the Organic Light Emitting Diode with Microcavity
Structure
B. W. Lim, M. C. Suh
Kyung Hee Univ., Korea
We have developed randomly dispersed nano-scattering films havingnano-hemispherical shapes and nano-concave structures bynanoimprinting or simple spin coating processes. Those films were
utilized as a diffuser layer to obtain desirable emission pattern like
Lambertian distribution.
13:30 - 16:30

Exhibition Hall B

Poster OLEDp2: OLED Poster
Special Topics of Interest on Printed Electronics
OLEDp2 - 1 High-Mobility Solution-Processed Organic FieldEffect Transistors with Channel Length of 5 µm
R. Nakamichi, T. Nagase, T. Kobayashi, Y. Sadamitsu*,
H. Naito
Osaka Pref. Univ., Japan*Nippon Kayaku, Japan

We have fabricated short-channel organic FETs with top-gate
configurations by conventional spin-coating processes. The solutionprocessed organic FETs with a channel length of 5 µm exhibit highfield-effect mobilities of 1 cm2V-1s-1 in both the linear and saturation
regions and show electrically stable operations against gate bias
stress.

J.-Y. Liao, H.-C. Yeh, T.-C. Chao, J.-S. Lin, M.-R. Tseng
ITRI, Taiwan
A novel orange emitter, PO-10, is studied. The PO-10 dopant performs
ultra-high efficacies of 44.3 lm/W and 45.8 cd/A in NPB host. Twoemitter white devices using PO-10, FIrpic and a tri-host system arealso characterized. Efficacies of 24.8 lm/W and 39.5 cd/A are recorded
at brightness of ca. 2000 nits.

IDW ’15The 22nd International Display Workshops
December 9 – 11, 2015
Otsu Prince HotelOtsu, Japan
http://www.idw.or.jp
127

OLED

OLEDp2 - 2L A Novel Orange Emitter for Solution Processed
White OLEDsThursday

December 4

13:30 - 16:30

Exhibition Hall B

Poster OLEDp3: OLED Poster
OLEDp3 - 1 Polyfluorenes Containing Partially Hydrolyzed
Phosphonate Pendant Groups as Electron-Injection
Layer for PLEDs
Y. Chen, C.-Y. Chou, H.-A. Lu, C.-P. Chen, Y.-J. Lin,
C.-S. WuNat. Cheng Kung Univ., Taiwan
Polyﬂuorenes containing pendant phosphonate (PF-EP) or partiallyhydrolyzed phosphonate groups (PF-EPK) are successfully applied aselectron-injection layer (EIL) in PLEDs. The device with PF-EP dopedwith 2.5% PF-EPK as EIL enhanced device performance to 12052
cd/m2 and 3.62 cd/A, respectively, from 725 cd/m2 and 0.16 cd/A ofnon-EIL device.
OLEDp3 - 2 Inverted Transparent Organic Light-Emitting Diodes(i-TOLEDs) Comprising Metal Oxide Compounds as
Electron-Injection Layer without Alkali Metal
R. Tejima, M. Ichikawa, Y. Hoshi, T. Uchida
Tokyo Polytechnic Univ., Japan
Inverted transparent OLED (i-TOLEDs) were made using spray CVD
and vacuum-deposition methods. Only oxide compounds were used for
the EIL of the diodes and without alkali metals. Furthermore, these
i-TOLEDs were made with a nanoscale metal/dielectric multilayeredtransparent anode. We evaluated the performance of i-TOLEDs with
ZnO, ZrO2, ZnO:ZrO2.
OLEDp3 - 3 The Study of High Resolution Micro-Contact
Printing Technology on 4-in. 441 ppi FHD OLED
Display
J.-A. Cheng, P.-C. Lin, Q. Li*, Z. Zhu*, D. An*,
L.-N. Chien, C.-T. Lin, I.-W. Wu**, I.-M. Lu, S. Fan*
Yeh Hsin Tech. Consulting, Taiwan*Tsinghua Univ., China**Century Tech., China
A 4-in. FHD OLED was investigated by using micro-contact printing
technology. Via micro-patterned PDMS stamps, the full-color sub-pixel
arrays with pattern size of 6.2 μm, 6.3 μm and 10.2 μm for red, green
and blue, respectively, at a resolution of 441 ppi were printed fordemonstrating its ability for OLED display fabrication.

128

Thursday

December 4

OLEDp3 - 4 Enhancement of Hole-Injection and Power
Efficiency of Organic Light Emitting Devices Using
an Ultra-Thin MnO-Doped ZnO Buffer Layer
H.-W. Lu, P.-C. Kao*, S.-Y. Chu
Nat. Cheng Kung Univ., Taiwan*Nat. Chiayi Univ., Taiwan
In this paper, the MnO-doped ZnO (MZO) layers with different
thickness were prepared by thermal-evaporating the MnO-doped ZnO
powders and then treated by ultraviolet (UV) ozone exposure. The
luminance enhanced about 262% from 8230 cd/m2 of non-doped to21600 cd/m2 of 1 nm MnO-doped ZnO at 8 V.
OLEDp3 - 5 Characterization of Metals/Pentacene Interfaces byHard X-Ray Photoelectron Spectroscopy
I. Hirosawa, T. Watanabe, H. Oji, K. Tada*, N. Yoshimoto*
JASRI, Japan*Iwate Univ., Japan
Electronic structures around interfaces between metals and pentacene
were characterized by hard x-ray photoelectron spectroscopy. It wasproved that electronic state of Ag-coated pentacene film was moresensitive to applied biases than that of Au-coated film.
OLEDp3 - 6 Surface-Light-Emitting Transistors Using a P-Type
Metal-Base Organic Transistors
N. Kogasaka, H. Muto, K. Nakayama
Yamagata Univ., Japan

OLEDp3 - 7 A Characterization and Evaluation Method for a Gas
Barrier Film and Polarizer to Predict Minimum
Bending Diameter Allowed in a Flexible OLED
DeviceA. T. Huang, S.-T. Ho, S.-H. Hung, M.-T. Lee
AU Optronics, Taiwan
Here we propose an easy straining method for a preliminary screeningof gas barrier film and polarizer for a ﬂexible OLED device. Change ofgas barrier property can be detected with calcium cell. Changes of
optical properties of a polarizer can be measured with different opticalmeasurement.

129

OLED

We demonstrated high performance light-emitting organic transistors
using p-type metal-base organic transistors (MBOT) having a simple
layered structure with ﬂuorescent OLED materials. The p-type MBOT
enables us to reduce energy barrier for the emitting layer, resulting inhigh luminous efficiency.

Thursday

December 4

OLEDp3 - 8 Analysis of Exciton Quenching Dynamics of Ir(ppy)3
with Hole Measured by Time-Resolved
Luminescence Spectroscopy
S. Oyama, H. Sakai, H. Murata
JAIST, JapanThe time-resolved luminescence spectroscopy is employed to clarify
the exciton quenching dynamics in holes-only devices (HODs) basedon tris(2-phenylpyridinato)iridium(III) (Ir(ppy)3). The results indicate thereaction rate of exciton-hole quenching saturate at the hole current of
0.05 mA/cm2. On the other hand, exciton-hole quenching area expands
as increasing hole current.
OLEDp3 - 9 Detection of Charged Species in Operating Organic
Devices Using Multiple Reflection Absorption
SpectraY. Akagi, H. Sakai, H. Murata
JAIST, JapanWe developed a multiple reﬂection technique to obtain the absorption
spectra of charged species in operating devices. Absorption spectra of
the hole only devices (HODs) were measured under the operation. We
succeeded the high sensitive in-situ detection of dication of α-NPD in
solid state for the first time.
OLEDp3 - 10 In Situ Characterization of the Charge Transport andCrystal Structural Properties in Organic Thin Film
Transistor
T. Watanabe, T. Koganezawa, M. Kikuchi*, K. Nishida*,
N. Yoshimoto*, I. Hirosawa
JASRI, Japan*Iwate Univ., JapanA new instrumentation was developed to study the in situ electrical andcrystallographic properties of organic thin film transistor during vacuum
deposition. In situ measurement during deposition show 2-5-bis[p(hexylphenyl)vinyl]-thieno[3,2-b]thiophene (DH-DSTT) thin film isoriented polycrystalline film along surface normal and source-draincurrent elevated as film thickness increased.
OLEDp3 - 11 Mechanistic Analysis for Preferable Performances
at High Temperature of the OLED Device with New
Electron Transport Material
K. Nomura, T. Tanaka
TOSOH, JapanWe demonstrated low voltage, high efficiency and long lifetime inorganic light-emitting diode (OLED) devices using new electrontransport material (ETM) at room temperature and high temperatures.
And the origins of these preferable lifetime performances at hightemperature were discussed in terms of carrier balance and thermal
stability.

130Thursday

December 4

OLEDp3 - 12 High Efficiency Blue Phosphorescent Organic
Light-Emitting Diodes with Various Host Materials
S. H. Kim, Y. J. Kim, Y.H.Son, J.M.Lee, B.Y.Kang,
C.H.Noh, S.H.Kim*, J.H.Kwon
Kyung Hee Univ., Korea*Samsung Elect., Korea

We report high efficiency deep blue phosphorescent organic lightemitting diodes (PHOLEDs) by using well-known iridium(III)bis[(3,5diﬂuoro-4-cyanophenyl)-pyridinato-N,C ]picolinate (FCNIrpic) dopantwith good host materials. A maximum external quantum efficiency(EQE) of 23.9% and power efficiency of 30.2 lm/W are achieved with
CIE color coordinate of (0.14, 0.21).
OLEDp3 - 13 Improvement on Equivalent Circuit Model for OLEDwith Its Luminance Decay Characteristics
J. Wu, Z. Zou, Y. Tang, Y. Zheng
Southeast Univ., China
The fundamental electric characteristics and the luminance decay rulesof OLED have been achieved. The luminance of OLED changes
exponentially, and it is a function which initial luminance, decay time
factor, the decay exponent are related. Based on these rules, animproved equivalent circuit mode of OLED has been proposed.
OLEDp3 - 14 Efficient Ionization Method of Atomized Droplet for
Fabricating Multilayer Organic Light-Emitting DiodeA. Sato, T. Fukuda, N. Kamata, Z. Honda
Saitama Univ., Japan

OLEDp3 - 15 A Fast Evaluation of Barrier Tapes for In-Plane Water
Vapor Permeation in Conventional Ca Film Tests
S.-T. Ho, S.-H. Hung, W.-L. Hung, C.-L. Wang, M.-T. Lee
AU Optronics, Taiwan
The permeation of water vapor through barrier tapes on calcium film
has been observed and the geometrical difference around Ca film forvarious permeations has been introduced. Moreover, the growth of Ca
oxidation can be fitted to diffusion equations. Therefore, a fastevaluation of barrier tapes has been demonstrated.

131

OLED

We demonstrated an improved deposition rate of organic film by anefficient ionization method using a needle electrode, and it became 2.7
times faster by applying the high voltage. In addition, a maximum
luminance of 4,240 cd/m2 was achieved for a multilayer organic lightemitting diode with the electron blocking layer.

Thursday

December 4

OLEDp3 - 16 Blue Phosphorescence Light-Emitting Diode with a
New CbzOXD Host
H.-J. Chen, T.-L. Chiu, Y.-H. Hsieh*, M.-K. Leung*,
J.-H. Lee*
Yuan Ze Univ., Taiwan*Nat. Taiwan Univ., Taiwan
A new organic material was synthesized by conjugating a holetransporting moiety carbazole with an electron transporting moiety
oxadiazole (OXD) to achieve a bipolar molecule, which was employed
to be the host of emitting layer doped with blue emitter FIrpic inside an
efficient blue phosphorescence organic light-emitting diode.
OLEDp3 - 17 High Efficiency Blue Phosphorescence LightEmitting Diode with Novel CbzTAZ Host
H.-J. Chen, T.-L. Chiu, P.-S. Wang*, J.-H. Lee*,
Y.-H. Hsieh*, M.-K. Leung*
Yuan Ze Univ., Taiwan*Nat. Taiwan Univ., Taiwan
A novel bipolar carbzol-triazole derivatives was synthesized by
conjugating hole transporting moiety carbazole (Cbz) with electrontransporting moiety triazole (TAZ) to achieve a bipolar molecule, which
was employed as the host of emitting layer doped with blue emitter
FIrpic inside an blue phosphorescence OLED with EQE of more than
24%.
OLEDp3 - 18 Enhancement of Polarization Ratio on Polarized
Organic Light Emitting Diodes Using Anisotropic
Micro Lens Arrays
D. M. Lee, Y. D. Kim, S. I. Jo, C.-J. Yu, J.-H. Kim
Hanyang Univ., Korea
In this paper, we proposed an anisotropic micro lens structure tocompensate the polarization ratio of the polarized OLED. And also, we
could improve an out coupling efficiency of the organic light-emitting
diodes by optimization of the micro lens structure.
OLEDp3 - 19 Optical Modeling of V-Shaped Organic Solar Cells in
Oblique Incidence of Sunlight
J. Yoon, K. Kang, J. Kim
Kyung Hee Univ., Korea
We theoretically investigate the effect of the oblique incidence ofsunlight on V-shaped organic solar cells. The light absorbance at theactive layer is calculated as a function of the incidence angle. In
addition, we calculate the short-circuit current and the open-circuit
voltage by taking into account the light absorbance.

132Thursday

December 4

OLEDp3 - 20 Solution Processed N-P Junction for High
Performance Organic Light Emitting Diode
J. Kim, H.-M. Kim, J. Jang
Kyung Hee Univ., Korea
We have studied the OLED using solution processed n-p junction as
HIL. It is found that n-p junction acting as electron-hole generation canbe used in OLED instead of HIL of conventional OLED. Our device with
n-p junction exhibits similar performance comparable to conventional
OLED using HIL by thermal evaporation.
OLEDp3 - 21L Nano-Honeycomb Structured Organic LightEmitting Diodes with Enhanced Light Out-Coupling
Efficiency through the Effective Extraction of the
Surface Plasmon-Polariton Loss Mode
X.-B. Shi, M. Qian, D.-Y. Zhou, Y. Liu, J. Liang,
Z.-K. Wang, L.-S. Liao
Soochow Univ., China
The performance of OLEDs based on the nano-honeycomb structuresare systematically studied. There is good agreement between the
numerically calculated and the experimentally measured dispersion
relations for the nano-honeycomb structure OLEDs. As an applicationin red phosphorescent OLEDs, high enhancements greater than 2.0
and 2.3 fold are achieved for the current and power efficiency,
respectively.
OLEDp3 - 22L Extremely Low Operating Voltage Green
Phosphorescent Inverted Organic Light-Emitting
Diodes on Large-Size Flexible Substrate
Soochow Univ., China
Green phosphorescent inverted organic light-emitting diodes (IOLEDs)
with HAT-CN/Al/n-doped Bphen used as interlayer was demonstrated.
The IOLED shows the lowest driving voltage of 4.5 V at 10000 cd/m2 todata. For application in large-area OLEDs, a 120 120 mm2 ﬂexible
IOLED was successfully fabricated based on this interlayer.
OLEDp3 - 23L Investigation of n-Type Doping Organic LightEmitting Diodes with a Novel Electron-Injection
Material
M.-C. Li, P.-C. Kao, S.-Y. Chu
Nat. Cheng Kung Univ., Taiwan
This letter demonstrated the OLED incorporating a novel n-doping
transport layer composed of rubidium iodide (RbI) doped into theelectron transport layer as electron injection material. The device with a
15 wt.% RbI-doped Alq3 achieves maximum luminance of to 19500 cd/A
and also shows a efficiency of to 4.291 cd/A.

133

OLED

L. Ding, Y. Q. Sun, M. Y. Xie, K. Z. Wang, S. L. Liao

Thu./Fri.

December 4/5

OLEDp3 - 24L Multi-Channel Instrument of Water Vapor
Transmission Rate Measurements Using Electrical
Calcium Test
W. Duan, H. Zhang, S. Li, Z. Zhang, J. Zhang
Shanghai Univ., China
A multichannel instrument for measuring water vapor transmission rateof encapsulation thin films was developed based on the electricalcalcium test. The UV seal by glass was measured as 1.16 10-4 g/m2dayat 25 C and 80% RH. This system can measure an accurate
permeation rate with a high sensitivity.
OLEDp3 - 25L Transparent Organic Light-Emitting Diodes with Top
Electrode by Ion-Plating Method
H. Sano, R. Ishida, T. Kura, S. Fujita, S. Naka, H. Okada,
T. Takai*
Univ. of Toyama, Japan*Nachi-Fujikoshi, Japan
Transparent organic light-emitting diodes (OLEDs) were deposited with
top electrode of indium-tin-oxide (ITO) by ion-plating method. Hightransmittance of over 80% at 550 nm and bright emission of 1,500 and
830 cd/m2, from bottom and top side at 100 mA/cm2, respectively, wereobtained.

Friday, December 5
9:00 - 10:25

Snow Hall A

OLED5: OLED Materials (2)Chair:
Co-Chair:S. Aratani, Hitachi, JapanT. Ikuta, JNC Petrochem., Japan

OLED5 - 1: Invited Latest Status of Soluble-OLED Material
9:00
Development
T. Yamada, Y. Tsubata, D. Fukushima, K. Ohuchi,
N. Akino
Sumitomo Chem., JapanThe basic guidelines of material design for higher efficiency and longer
lifetime, and the recent progress of polymer organic light-emitting diode(p-OLED) are reported.

134

Friday
OLED5 - 2
9:25

December 5Electrical Properties of Solution-Processed Hole
Injection Layer Analyzed by ImpedanceSpectroscopy
T. Endo, Y. Horiuchi, N. Otani, K. Monzen
Nissan Chem. Inds., JapanThe electrical properties of our developing solution-processed hole
injection layer (HIL) were investigated by impedance spectroscopy. By
impedance analysis, we clarified that the hole carrier mobility of our
HIL was insensitive to temperature and/or electric field and our HIL
worked as an effective electron blocking layer in OLED devices.
OLED5 - 3
9:45

Design to Electron Injection Complex Using
Molecular Energy Calculation for High Performance
OLED
J. H. Kong, G. H. Kim, M. J. Park, H. W. Bae, J. H. Kwon
Kyung Hee Univ., Korea

We report two newly synthesized electron injection complexes, lithium
2-(2-pyridyl)pyridine-3-olate (LIPPy) and lithium 4-phenyl-2-(2-pyridyl)
phenolate (LIPPP), which were designed with molecular simulation.
The organic light emitting devices fabricated using new complexes
exhibit high performance as compare to the commercially available
electron injection complexes, lithium 8-quinolate (Liq) and lithium
2-(2-pyridyl)phenolate (LIPP).
OLED5 - 4
10:05

Iridium-Free OLED Solutions for the Whole Color
SpectrumM. Mydlak, D. Volz, D. Zink, T. Baumann, H. Flügge,C. Fléchon, J. Navarro

We present Singlet Harvesting emitter materials which efficiently emit
light in the whole color spectrum, even in the deep blue region. An
overview of the material class will show the capabilities of our new
material classes, that reach state-of-the-art efficiencies, like 73 lm/W in
solution-processed green OLED devices.
----- Break -----

Author Interviews and Demonstrations
16:45 – 17:45
Supporting Organizations:
The Japanese Society of Printing Science and Technology
The Society of Photography and Imaging of Japan

135

OLED

CYNORA, Germany

Thursday

December 4Workshop on 3D/Hyper-Realistic
Displays and Systems
Thursday, December 4
9:00 - 12:00

Exhibition Hall B

Poster 3Dp1: 3D/Hyper-Realistic Displays
3Dp1 - 1

Design of Pixel Structure for Color Electronic
Holography Using One-Dimensional Spatial Light
Modulator
A. Ueno, K. Nitta, O. Matoba
Kobe Univ., Japan

Pixel structure of one-dimensional spatial light modulator is designed incolor electronic holography. The numerical results indicate that the
optimization of pixel size in color electronic holography reduces thereconstruction error caused by the cross-talk noise due to diffraction
broadening.
3Dp1 - 2

Computer-Generated Hologram Using Range
Sensors and Digital Cameras at Arbitrary Locations
K. Tai, Y. Sakamoto
Hokkaido Univ., Japan

In this paper, we propose a method that creates computer-generated
holograms (CGHs) from voxel models generated by range sensors anddigital cameras. Proposed method expresses occlusion in generated
CGHs because devices are arranged arbitrary locations in a wide
range by camera calibration.
3Dp1 - 3

Automatic Geometric Calibration in Full-Parallax 3D
Display Using Holographic Screen
R. Higashida, M. Yamaguchi
Tokyo Inst. of Tech., Japan

We propose an automatic geometric calibration technique for a
dynamic 3D display using a holographic screen and a projector. The
test patterns suitable for the geometric calibration of the holographic
screen are projected and the reconstructed light-rays are captured by acamera. In the experiment, correct 3D image was reconstructed.

136Thursday
3Dp1 - 4

December 4
Volumetric 3D Display Using Rotating Screens
S. Suzuki, C. Fujikawa, M. Omodani
Tokai Univ., Japan

We have focused on volumetric 3D display which can produce real 3D
images for universal view point. We have suggested and demonstrated
a novel method of volumetric 3D display, in which multi layers ofsection images are projected by an LCD projector on rotating
concentric screens.
Also presented in Innovative Demonstration Session (see p. 212)
3Dp1 - 5

Floating Depth-Fused 3D Image Using Multi-Focal
Lens 3D System for Image Data Reduction
R. Tanimoto*, T. Kurokawa*, H. Yamamoto*,**, S. Suyama**Univ. of Tokushima, Japan**Utsunomiya Univ., Japan

In order to reduce the number of layered 2D image data in volumetric
3D display, we adopt DFD (Depth-fused 3D) technology to multi-focal
lens 3D system. Floating DFD image with appropriate perceived depth
can be achieved by calibrating luminance appropriately.
3Dp1 - 6

Wide Viewing Zone by Dynamic Head Movement in
Edge-Based DFD Display
T. Soumiya*, H. Kuribayashi**, H. Yamamoto*,***,S. Suyama**Univ. of Tokushima, Japan**Nikon, Japan***Utsunomiya Univ., Japan

Wide viewing zone can be achieved in edge-based DFD (Depth-fused3D) display by dynamic head movement. Statistically, the viewing zone
is limited between both eyes in DFD display. On the other hand, by
moving head dynamically, viewing zone can be widely expanded ascompared with the static case.
3Dp1 - 7

R. Kujime*, K. Miyamoto*, S. Suyama*, H. Yamamoto*,***Univ. of Tokushima, Japan**Utsunomiya Univ., Japan

We have converged sound-wave by using crossed-mirror array (CMA),
which was reported to converge light by reﬂection. As soundwavelength is much longer than light-wavelength, large size CMA
comparable to sound-wavelength is used for converging sound-wave.
By measuring sound 3D distribution, sound intensity has a maximum
value at theoretical converging point.

137

3D

Crossed-Mirror Array Converges Sound Wave in 3DSpace

Thursday
3Dp1 - 8

December 4
Perceived Depth Degradation by Delay Time andDiscontinuous Image Flipping in Monocular Motion
Parallax Display
S. Yamada*, I. Ishii**, H. Yamamoto*,***, S. Suyama**Univ. of Tokushima, Japan**Hiroshima Univ., Japan***Utsunomiya Univ., Japan

Perceived depth in monocular motion parallax is degraded byincreasing delay time between head and stimulus motion and by
discontinuous image ﬂipping. When delay time is 649 ms, range ofperceived depth is degraded about 65%. When image ﬂipping is 63mm, range of perceived depth is degraded about 50%.
3Dp1 - 9

Elimination and Mechanism Study of Binocular
Luminance Difference in a 240 Hz Shutter-Type 3D
LCDs
Y. Tian, X. Zhang, J. Hsu, C. Chen, C. Dong, X. Lian
Shenzhen China Star Optoelect. Tech., China

An obvious binocular luminance difference was found in a 240 Hz 3D
LCDs. A facile and low-cost technology has been successfully
developed for solving this issue. Besides, the root cause of thisphenomenon has been mastered, and the mechanism illustration is
proposed. With this solution, the luminance difference can beeliminated.
3Dp1 - 10

Withdrawn

3Dp1 - 11

Crosstalk Suppression Based on Gray Couples
Measurement
J. Wang, X. Li, Y. Zhang, Z. Xia, S. Li*, S. Huang*Southeast Univ., China*Hisense Electric, China

A crosstalk suppression method for active glasses 3D LCD displays is
proposed. Firstly, couples of luminance through left/right glass is
detected simultaneously. Based on those measurement results,
optimized substitution for each couple can be derived and comprises alookup table together. Crosstalk can be suppressed significantly when
applying the table.
3Dp1 - 12

Study of Image Performance Affected by Color Pixel
Arrangements and Lenticular Lenses Configuration
for Autostereoscopy
Z.-H. Jhong, Y.-W. Chen, C.-R. Sheu
Nat. Cheng Kung Univ., Taiwan

3D imaging performance with respect to color sub-pixel arrangements
is investigated via an autostereoscopic display with non-slanted orslanted lenticular lenses. The better imaging performance is achievedby slanted lenticular lenses rather than by non-slanted one. Especially,no more color separation is occurred for vertical stripe sub-pixel
arrangement.
138

Thursday
3Dp1 - 13

December 4
KANSEI Multimedia Display System That Can
Control Smell Discharge Direction and thePsychological Effects
M. Tanaka, R. Shu, R. Shinohara, K. Tomono, A. Tomono
Tokai Univ., Japan

In order to promote the realistic sensations of visuals, a display system,
in which smell along with air was discharged through a bamboo-blind
screen to a viewer, was invented. A subject questionnaire and acerebral blood-ﬂow meter were used for the analysis of the usersʼ
psychological impact.
3Dp1 - 14L

Real-Time Time-Division Color Electroholography
Using a Multi-GPU PC
H. Araki, H. Niwase, N. Takada, H. Nakayama*,
A. Sugiyama**, T. Kakue**, T. Shimobaba**, T. Ito**
Kochi Univ., Japan*Nat. Astronomical Observatory of Japan, Japan**Chiba Univ., Japan

We proposed a real-time time-division color electroholography using
parallel calculation on multi graphics processing unit (GPU) system.
Finally, we succeed to display a reconstructed color 3D object ofaround 4000 points per color in real-time.
3Dp1 - 15L

Real-Time Spatiotemporal Division Multiplexing
Electroholography Using Multi-GPU Cluster System
H. Niwase, H. Araki, N. Takada, Y. Maeda, M. Fujiwara,
H. Nakayama*, A. Sugiyama**, T. Kakue**,
T. Shimobaba**, T. Ito**
Kochi Univ., Japan*Nat. Astronomical Observatory of Japan, Japan**Chiba Univ., Japan

3Dp1 - 16L

Implementation of Hologram Generation from
Integral Photographic Image with Wide ViewingZone Angle on GPU
T. Suzuki*,**, T. Hayashi*,**, N. Hirata*,**, Y. Ichihashi**,K. Yamamoto**, T. Kakue*, T. Shimobaba*, T. Ito*
*Chiba Univ., Japan**NICT, Japan

We implemented an algorithm for enlarging the viewing-zone angle ofholographic images on GPU with the aim of speeding up thecalculation. We achieved results showing that calculations on the GPU
were 15 times faster than on the CPU.

139

3D

We try to display the real-time reconstructed 3D image consisting of alarge number of object points. We propose spatiotemporal divisionmultiplexing electroholography using multi-GPU cluster system with
InfiniBand network. Finally, the proposed method realized a real-timereconstructed movie of a 3D object composed of 44,647 points.

Thursday
3Dp1 - 17L

December 4
3D Image Superposition for Flexible 3D Shape
Measurements
S. Shinohara, Y. Takaki
Tokyo Univ. of A&T, JapanA new application for see-through three-dimensional (3D) displays is
proposed where 3D objectʼs shapes are measured using human depth
perception. The shapes of reference 3D images superposed on 3D
objects are interactively modified. The 3D shapes can be measured
even when there are obstacles ahead of the objects.
3Dp1 - 18LTransparent Flat-Panel Integral Imaging Display
Y. Yamaguchi, Y. Takaki
Tokyo Univ. of A&T, Japan

This paper proposes a transparent ﬂat-panel 3D display based on
integral imaging that enables to superpose 3D images on backgroundscenes. Plural lens arrays are combined with a transparent ﬂat-panel
display to combine background rays with rays of 3D images.
Preliminary experimental results describing the see-through feature areprovided.
3Dp1 - 19L

Integral 3D Display Using Computer-Generated
Light Field Data
T. Iwane, M. Nakajima
Nikon, Japan

We generated light field data in computer according to our light field
theorem and applied this data to an integral 3D display. We report that
3D image can be displayed on a common cellular phone, placing a lensarray plate without adjusting position.
Also presented in Innovative Demonstration Session (see p. 212)
3Dp1 - 20L

Nanomaterials for 3D Imaging Screen
H. Aoki, A. Kuroda, S. Sato, K. Kodama, S. Maeda
Tokai Univ., Japan

We have recently developed a calculation-free 2D-to-3D automaticconversion projection screen that uses the specific nanomaterials. The
focus of this present work is to explore the nature of materials which
are appropriate to the imaging screen.

SID Display Week 2015
May 31 – June 5, 2015
San Jose Convention Center
San Jose, California, U.S.A.
140

Thursday
3Dp1 - 21L

December 4
In Cell Laminated Polarizer on Patterned Retarder
3D Display with Low Temperature Alignment
Material
J. Park, D. Lee, S. Kim, M. Yun, W. Jeong, K. Lim,
I. Kang, A. Muravsky*, A. Muravsky*, V. Agabekov*
LG Display, Korea*NAS Belarus, Belarus

A low-temperature alignment material (LTAM) for an in- cell laminatedpolarizer on a patterned-retarder (ICL-PR) type 3D displays has beendeveloped in order to enhance the vertical viewing-angle. The opticalproperties of LTAM were compared with the polyimide, and the verticalviewing-angle of the proposed 3D-panel with LTAM was measured.
3Dp1 - 22L

Imaging Studies of the Human Eye 3D Spatial
Frequency Identification
C.-W. Lin, N.-W. Hsueh, Y.-C. Fang
Nat. Kaohsiung First Univ. of S&T, Taiwan

This study analyzes the human eyes identification of 2D and 3D
images. Invited 80 students, when display appear images, they identify
various the 2D and 3D identifications of the test. The experimental
results showed that the two-dimensional image recognition rate 6.1%
higher than the three-dimensional images.
3Dp1 - 23L

Study of Realistic Color Painting for 3D Models
C.-C. Lan, H.-F. Wang, T.-H. Lin, P.-C. Hu*, H.-S. Chen
Nat. Taiwan Univ. of S&T, Taiwan*Metal Inds. R&D Ctr., Taiwan

This paper discusses a practical solution of color texture mapping. In
this paper, we try to map the high quality color texture, particularly fromphysical measurement, on the 3D teeth model in order to construct a
realistic 3D teeth model. In the result, several realistic teeth models arecompared to different RGB measurements.
----- Lunch -----“Summing Up of the PDP History
and a Peek at Plasma
Technologies Beyond Displays”(FED4 – 1)
Friday, December 5, 2014
15:15 - 15:55
Room 302B
See page 118 for detail141

3D

The 50th Anniversary Speech of PDPs

Thursday

December 4

13:30 - 15:00

Room 302 A

3D1: Holography
Chair:
Co-Chair:

H. Yamamoto, Utsunomiya Univ., Japan
M. Tsuchida, NTT, Japan

3D1 - 1:
13:30

Invited Real-Time Pupil Tracking for Holographic
Display
H.-G. Choo, K. A. Moon, J. Kim
ETRI, Korea

In this paper, we address a real-time pupil tracking method forholographic display. By using Kinect as auxiliary sensing, thecomplexity of stereo vision-based tracking can be reduced enough tolocate the viewing window of the holographic display onto the observerʼ
s pupil.
3D1 - 2:
13:55

Invited Color Holographic Display Based on Shifted
and Scaled Fractional Fourier Transform
J. Xia, C. Chang, Y. Jiang, W. Lei, Y. Xie*, M. Kang*,
Q. Zhang*
Southeast Univ., China*S&T Electro-Optic Control Lab., China

We propose a method of calculating the color hologram for color
holographic display. Three phase-only holograms of red, green andblue component are calculated by using the shifted and scaled
fractional Fourier transform. Both of the chromatic aberration and zeroorder diffraction can be eliminated by our method.
3D1 - 3
14:20

3D Hologram Reconstruction in the Front of aTransmission Diffuser Screen
J.-F. Chang, W.-C. Su
Nat. Changhua Univ. of Education, Taiwan

In this article, based on the technique of optical phase conjugation, atechnique of 3D hologram reconstruction in the front of the diffuser has
been presented.
3D1 - 4
14:40

DMD as a Display Device for Holographic Displays
J.-Y. Son, B.-R. Lee*, M.-C. Park**, O. Chernyshov
Konyang Univ., Korea*ETRI, Korea**KIST, Korea

Properties of a DMD as being a display device for holographic displays
and the condition of being a blazed grating are discussed. High speed,large separation between reconstructed image and reconstruction
beam, a rhombic pixel arrangement and no 0th order beam for a
specific wavelength are those desired for the displays.
----- Break ----142

Thursday

December 4

15:15 - 16:45

Room 301

3D2: Interactive 3D Display Technology
Special Topics of Interest on Augmented Reality and Virtual Reality
Chair:
Co-Chair:

M. Tsuchida, NTT, JapanK. Yamamoto, NICT, Japan

3D2 - 1:
15:15

Invited Interactive Display Technologies Using
High-Speed Image Processing
M. Ishikawa
Univ. of Tokyo, Japan

Design concepts for implementing low latency interface using highspeed image processing and immersive interactive 2D/3D display
systems such as commercial 3D display, emerging aerial display,
dynamic projection mapping, high speed information environment,
volume slicing display, and deformable workspace will be shown by
using videos of those systems.
3D2 - 2:
16:00

Invited Floating Digital Signage Based on Aerial
Imaging Techniques
H. Yamamoto*,**,***, S. Suyama****Utsunomiya Univ., Japan**JST-CREST, Japan***Univ. of Tokushima, Japan

This paper reviews our ﬂoating digital signage techniques. After
introducing design issues for ﬂoating LED signage, we introduce andshow experimental results on two types of optical components:
crossed-mirror array enables ﬂoating visual and thermal display; AIRR
(aerial imaging by retro-reﬂection) forms ﬂoating LED screen with wideviewing angle.
Also presented in Innovative Demonstration Session (see p. 214)
3D2 - 3L
16:30

Comparison of Material Combinations for Brightand Clear Floating Image by Retro-Reflective Reimaging Technique

3D

Y. Tokuda, A. Hiyama, M. Hirose, T. Large*
Univ. of Tokyo, Japan*Microsoft Appl. Scis. Group, USA
We investigate a solution to create clear and bright ﬂoating images
from LCD display by comparing 16 different kinds of retro-reﬂectors
and beam-splitters for a pseudo-phase-conjugation-effect. We found areﬂective polarizer film can enhance the brightness and corner-cube
array retro-reﬂectors can create clearer results than glass beads typefor LCD.
Also presented in Innovative Demonstration Session (see p. 214)----- Break -----

143

Thursday

December 4

17:00 - 18:40

Room 301

3D3: Omnidirectional Hyper-Realistic System
Special Topics of Interest on Augmented Reality and Virtual Reality
Chair:
Co-Chair:K. Yamamoto, NICT, Japan
M. Tsuchida, NTT, Japan

3D3 - 1:
17:00

Invited Characteristic of the Ultra-Realistic Dome
Images Estimated from Viewing Behavior
M. Okyudo, C. Yoshizumi
Wakayama Univ., JapanThe audience can feel realistic sensation by the dome images better
than by the general ﬂat images. We studied the characteristic of thedome images estimated from viewing behavior. As a result, the headʼsmotion is raising the realistic. Then, we propose the dome viewing towatch Tokyo Olympic 2020.
3D3 - 2:
17:25

Invited Development of Spherical Image Camera
RICOH THETA
M. Shohara
Ricoh, JapanA spherical image camera RICOH THETA is an emerging digital
camera. The development of a spherical image camera is different froma conventional digital camera. We had to optimize the ways of the lensdesign, image processing and user interface. This paper explains thetechnical challenges during the development.
3D3 - 3:
17:50

Invited Omnidirectional Video Streaming Systemwith HMD
D. OchiNTT, JapanAn interactive video streaming technology that lets users view theirfavorite sections of events recorded with a 360 omnidirectional camera
is proposed. This technology provides an immersive experience with aninteractive view of any direction through an HMD following the user's
head orientation within a reasonable amount of network bandwidth.
Also presented in Innovative Demonstration Session (see p. 214)
3D3 - 4:
18:15

Invited Holographic HMD with Wide Visual Field
Y. Sakamoto
Hokkaido Univ., JapanAn electro-holographic display has a potential to be an ultimate threedimensional (3D) display, however the visual field is narrow due toinsufficient resolutions of the electronic devices. This paper reports ourcolor electro-holographic head mounted display (HMD) with a widevisual field.
Author Interviews and Demonstrations
18:30 – 19:30
144

Friday

December 5
Friday, December 5

9:00 - 10:20

Room 301

3D4: 3D/Hyper-Realistic Displays (1)Chair:
Co-Chair:

H.-G. Choo, ETRI, Korea
K. Yamamoto, NICT, Japan

3D4 - 1
9:00

Realization of Homogeneous Brightness for
Autostereoscopic Displays with Directional
Backlights Composed of Convex Lens Arrays
S. Ishizuka, T. Mukai, H. Kakeya
Univ. of Tsukuba, Japan

We realize homogenous brightness of the autostereoscopic display
with a directional backlight using a convex lens array by aligning theelemental lenses so that the phase of lens placement in each raw may
differ from one another. The validity of the proposed optical design isconfirmed by a prototype system.
Also presented in Innovative Demonstration Session (see p. 215)
3D4 - 2
9:20

Floating Touch Display Based on a Heterogeneous
Imaging System
Y. Maeda, D. Miyazaki, S. Maekawa*
Osaka City Univ., Japan*Parity Innovations, Japan

An aerial imaging display with a sensor device is proposed as a ﬂoating
touch display. The proposed imaging system based on retro reﬂection
in a crosswise direction can be made at low cost without significant
distortion. An observer can see and manipulate the aerial image
naturally.
Also presented in Innovative Demonstration Session (see p. 215)
3D4 - 3
9:40

A 2D-3D Display with a 120 Hz Hybrid SpatialTemporal Color LCD
Y. Weng, Y. Zhang, X. Li

3DSoutheast Univ., China
A hybrid spatial-temporal color 2D/3D display is proposed. It uses a
120 Hz liquid crystal panel with two-color filters and a light emitting
diode matrix backlight. Compared to the current commercial 3D LCD,
this new configuration has a 1.5 times higher resolution and around 2
times higher light efficiency.

145

Friday

December 5

3D4 - 4
10:00

True Color Optical Simulation of Integral Imaging 3D
Display
J. Chen, B. Fang, D. Fan, Q. Liao, Q. Wei, C. Yang,
C. Lee, C. Lo, A. Lien*
Shenzhen China Star Optoelect. Tech., China*TCL Corporate Res., China

A true color method was proposed to simulate integral imaging (II) 3D
display of focused mode by adopting color filters in LightTools. The
simulated Moiré pattern and perspective views were in good
agreement with the measured ones in real setup.
----- Break ----10:45 - 11:45

Room 301

3D5: 3D/Hyper-Realistic Displays (2)Chair:
Co-Chair:J.-Y. Son, Konyang Univ., Korea
M. Tsuchida, NTT, Japan

3D5 - 1
10:45

3D Image Qualities for the 4K2K TVs
J.-Y. Huang, H.-S. Chen, P.-L. Sun, R. Luo*Nat. Taiwan Univ. of S&T, Taiwan*Univ. of Leeds, UK

The aim of this study is to evaluate 3D image qualities of 65-in. 3D TVs
with a maximum resolution of 4K2K. Two kinds of glasses-type 3D TVs
are tested: one is active pattern retarder type and the other is passive
shutter-glasses type. Two kinds of experiments of visual assessment
are designed.
3D5 - 2

Withdrawn

3D5 - 3
11:25

4D Floating Image Display Using Dual Off-Axis
Parabolic Reflectors
K. Li
Wavien, USA

This paper describes a reﬂector system with the 4th dimension addedin which the 3D ﬂoating image moves from one location to anotherwithout the constraint of the focus in response to the movement of theobject. Applications include theme-parks, fashion shows, security, etc.,
can be implemented using various configurations.
----- Lunch -----

146

Friday

December 5

13:30 - 14:55

Room 301

3D6: Optical Devices for 3D System
Chair:
Co-Chair:S. Yano, Shimane Univ., Japan
M. Tsuchida, NTT, Japan

3D6 - 1:
13:30

Invited Expanding Depth Directional Stereoscopic
Viewing Zone by Continuous Varying Optical Power
Lens with Removing Structural Crosstalk in AutoStereoscopic 3D
K.-H. Lee
Korea Photonics Tech. Inst., Korea

To expand the suitable stereoscopic viewing zone on depth directionaland remove the structural crosstalk induced by the overlapped shapedifference between unit-pixel and viewing zone forming optics as
slanted lenslet, Segmented Lenticular lens having Continuous Varying
Optical Power (SL-CVOP) is proposed.
3D6 - 2
13:55

A Novel Autostereoscopic Display Designed by Useof Wave Optics Simulation
A. Yuuki, T. Fujino, T. Satake, Y. Niwano, S. Nagano
Mitsubishi Elec., JapanWe designed a novel autostereoscopic display by wave optics
simulation. It is composed with a parallax barrier and a liquid crystal
display. We formed distributions of transmission coefficient andrefractive index in its light path, so that it has wide 3D viewing space
where the luminance peak is very ﬂat.
3D6 - 3
14:15

Analytical Solutions Finder (Moiré Solver) of theParameters of 3D Auto-Stereoscopic Multi-View
DisplayF. Mukhtarov, S. D. Hwang
Samsung Elect., Korea

IDW ’14 Tutorial in Japanese
Organized by SID Japan Chapter
Tuesday, December 2, 2014
Room 301, 3F
TOKI MESSE Niigata Convention Center
Detailed information is available on
http://www.sid-japan.org
147

3D

In this paper we present our work introducing easy to use mathematicmechanism to suppress Moiré pattern for 3D displays. Mathematicalengine was developed based on “Microsoft Office EXCEL” s/w. Results
also confirmed by ray tracing simulations and Lenticular lens sample
production for “Samsung Galaxy Note PRO”.

Friday

December 5

3D6 - 4
14:35

The Design of a Stereo Microscopic Eyepiece byUsing a Biprism
S.-W. Yang, T.-H. Lin*, C.-Y. Chen*, K.-L. Huang**,
P.-J. Wu***Nat. Central Univ., Taiwan*Nat. Yunlin Univ. of S&T, Taiwan**Ming Dao Univ., Taiwan***Nat. Chiao Tung Univ., Taiwan

This study proposes a stereo microscopic eyepiece which is mounted
in the stereo microscope. The eyepiece uses a biprism placed between
the double gauss lens for obtaining an image pair with two view angles.
It cannot only help the stereo microscopic to get 3D images but is easy
to refit.
----- Break ----15:15 - 16:20

Room 301

3D7/VHF7: Visual Perception for 3D System
Chair:
Co-Chair:

K.-H. Lee, Korea Photonics Tech. Inst., Korea
Y. Hisatake, Japan Display, Japan

3D7/
VHF7 - 1:
15:15

Invited Towards the ISO Guideline for Image Safety
during Stereoscopic Viewing
T. Bando, A. Iijima*, S. Yano**
AIST, Japan*Niigata Univ., Japan**Shimane Univ., Japan

In accordance with the development of ICT technologies, stereoscopic
3D images have been commercially available. At the same time,
biological inﬂuences have been reported, and a guideline to prevent
undesirable inﬂuences is expected. In this review, the bases and efforts
to establish such a guideline for image safety are discussed.
3D7/
VHF7 - 2
15:40

The Impact of Screen Size on 3D Flicker-Free
Luminance
P.-L. Sun, Y. P. Sie, H.-S. Chen, M. R. Luo*Nat. Taiwan Univ. of S&T, Taiwan*Univ. of Leeds, UK

3D ﬂicker is one of the primary factors increasing visual discomfort
especial for shutter-glasses type 3D TVs. The ﬂicker-free luminance
was estimated visually and the results show itʼs inversely proportional
to the screen size. Besides, dimmable LED ambient lighting would
generate strong ﬂicker through the glasses.

148

Friday

December 5

3D7/
VHF7 - 3
16:00

Measurement of Visual Fatigue Induced by
Stereoscopic Display Using an Oddball Based
Event-Related Potential Experiment
P. Ye, H. Liang, J. Wang, F. Chen, S. Yang, J. Chen,
X. Wu, D. Gao
Nat. Sun Yat-Sen Univ., China

An oddball based event-related potential (ERP) experiment was
designed to assess the visual fatigue induced by stereoscopic display.
By using 3D stimuli without monocular cues, we controlled thesubjectsʼ disparity load and avoided fatigue induced by frequentchanged disparity. ERP signals were obtained for characterizing 3D
fatigue more accurately.
Author Interviews and Demonstrations
16:45 – 17:45
Supporting Organizations:Technical Group on Three-Dimensional Image Technology, ITE
Holographic Display Artists and Engineers Club, The Japan Society ofApplied Physics

Evening Get-Together
with Wine
Tuesday, December 2, 2014
18:00 – 20:00
Observation Deck (31F),
Hotel Nikko Niigata(Sponsored by Merck Ltd., Japan)
See page 12 for details
3D

EXHIBITION
12:40 – 18:00 Wednesday, Dec. 3, 2014
10:00 – 18:00 Thursday, Dec. 4, 2014
10:00 – 14:00 Friday, Dec. 5, 2014
Exhibition Hall B
TOKI MESSE Niigata Convention CenterFree admission with your registration name tag
149

Thursday

December 4Workshop on
Applied Vision and Human Factors
Thursday, December 4
9:00 - 10:25

Room 302 A

VHF1: Optical Measurements
Chair:
Co-Chair:J. Bergquist, Nokia Techs., Japan
Y. Hisatake, Japan Display, Japan

VHF1 - 1:
9:00

Invited General FPD Mura Index under the IEC
Measurement Standard
S. Hasegawa*,**, S. Tomioka*, K. Nagamine**Sony, Japan**JEITA, JapanWe developed FPDʼs General Mura Index and submit to the IEC TC110
in order to provide the scale of Mura for proper evaluation method in
the FPD industry instead of limit sample base method.
Also presented in Innovative Demonstration Session (see p. 212)
VHF1 - 2
9:30

Novel Evaluation Method of Sparkle for LCDs withDifferent Anti-Glare Films
T.-W. Hsu, Y.-H. Chiang, C.-W. Chen
AU Optronics, Taiwan

We have presented a new method for sparkle evaluation. Unlike
traditional methods, the proposed method separate and estimate
sparkle in spatial-frequency domain, the analyzing process could bedone automatically. The quantification factor calculated from analyzing
process has good agreement with human perception test.
VHF1 - 3
9:50

Spectral Imaging Analysis of OLED Display Light
Emission Properties
P. M. Boher, T. Leroux, T. Bignon, V. Collomb-Patton
ELDIM, France

OLED displays are measured using innovative spectral imaging
system. The homogeneity of red, green and blue states emission isevaluated on the entire display surface and at the sub pixel level. Color
ﬂuctuations above the human eye sensitivity are measured in bothcases.

150

Thursday

December 4

VHF1 - 4L
10:10

Color Mixing Assessing and Human Factor
Evaluating Under Large Viewing Angle in the FringeField Switching ModeP. Y. Kuo, P. C. Yeh, H. C. Huang, C. S. Cheng, W. Huang
AU Optronics, Taiwan----- Break ----10:45 - 12:10

Room 302 A

VHF2: Color and OLEDs
Chair:
Co-Chair:S. Hasegawa, Sony, JapanK. Masaoka, NHK, Japan

VHF2 - 1:
10:45

Invited Visual Effects of Curved AMOLEDs
J. S. Kimmel
Nokia Techs., Finland

Flexible AMOLEDs are becoming feasible display devices for consumer
applications, with visual characteristics approaching glass-based
AMOLEDs. Some visual effects become evident when the display isbent. Measurement results of an AMOLED device are presented, andthe main AMOLED architectures are discussed, assessing the visual
effects of bending the display.
VHF2 - 2
11:15

A Monitor-Based System for Digital Quantificationof Deuteranomalous Vision
Y. Tsai, H. Chen, M. R. Luo*Nat. Taiwan Univ. of S&T, Taiwan*Univ. of Leeds, UK

The aim of the present study is to further find a colour vision analyticalstrategy and predict the severities of deuteranomalous colour vision
based on just-noticeable chromatic difference (JNCD). The monitorbased system was used to perform colour vision test on well-calibrated
colour monitor.

151

VHF

Color mixing assessing under large viewing angle can be carried out
by NTSC measurement. However, there is no link between
measurement and human vision experience. We verify color mixing bymeasurement and human vision experience and find the most
optimized pixel structure which can improve image quality and color
mixing.

Thursday
VHF2 - 3
11:35

December 4
Estimation of the Helmholtz-Kohlrausch Effect inNatural Images Using Gaze Tracking Data
T. Shizume, G. Ohashi, H. Takamatsu*, Y. Shimodaira
Shizuoka Univ., Japan*NEC Display Solutions, Japan

The purpose of this study is to derive and discuss the calculated andmeasured values of the Helmholtz-Kohlrausch effect in natural images.
To improve the estimation accuracy, we apply gaze tracking data toderivation of the calculated values.
VHF2 - 4L
11:55

Study on Optimum Color Gamut of Mobile WCG
LCD
W. Seo, T. Kim, S. Lee, J. Jang, T.-Y. Park, J. Park,
M. Lim, J. Baek
LG Display, Korea

This paper proposed an optimum color gamut to maximize color
preference of mobile LCD. An experiment was carried out to find the
optimized color gamut. The optimum color gamut from this study wasevaluated at the same level using mobile LCD/OLEDs have color
gamut larger than the optimum color gamut.
----- Lunch ----13:30 - 16:30

Exhibition Hall B

Poster VHFp1: Applied Vision and Human Factors
VHFp1 - 1

Evaluating and Simulating on Luminance
Discrepancy between Centre and Fringe of a Liquid
Crystal Display
J. Wang, C. Wu, H. Liu, S. Lo
Shenzhen China Star Optoelect. Tech., China

The brightness in two lateral sides of a large-sized display is often
higher than the central area. We provided specification values ofluminance and pixel voltage discrepancy for future display design, andwe gave a guiding principle for simulation to restrict the luminancediscrepancy below the acceptable specification value.
VHFp1 - 2

Object Images Quality Improvement for Transparent
Display
Y.-H. Tsai, W.-D. Jeng, K.-L. Lo*, T.-W. Huang,
O.-Y. Mang
Nat. Chiao Tung Univ., Taiwan*ITRI, Taiwan

In this paper, we simulated the diffraction effect of transparent
electrowetting display (EWD) and proposed a corresponding couple
micro lens to reduce the diffraction effect. After optimizing the lens size,
92% diffraction width can be reduced.
152

Thursday
VHFp1 - 3

December 4
Image Qualities of the Curved OLED Displays withDifferent Picture Setting Modes
J.-Y. Huang, C.-W. Hsu, H.-S. Chen, P.-L. Sun,
M. R. Luo*Nat. Taiwan Univ. of S&T, Taiwan*Univ. of Leeds, UK

VHFp1 - 4

Quantitative Visual Assessment of Moving Image
Quality for 4K8K UHDTV Systems
I. Kawahara, H. Tabata
Keisoku Giken, Japan

A quantitative yet visual assessment on moving image quality andperformance for 4K8K system was developed. Simple readability
checks on dedicated patterns with well-designed motion, realized
efficient and reliable evaluation for both display and CODEC. While
making best use of human perception, display ergonomics, or visual
comfort is highly considered.
Also presented in Innovative Demonstration Session (see p. 212)
VHFp1 - 5

Equivalent Spatial Resolution of RxGxBx Subpixel
Arrangements
H.-C. Lin, C.-H. Wen*, P.-L. Sun, S.-P. Wang*, K.-J. Hu*,
M.-C. Lo**Nat. Taiwan Univ. of S&T, Taiwan*ITRI, Taiwan**Shih Hsin Univ., Taiwan

This paper approaches a set of subpixel arrangements with thecorresponding subpixel rendering algorithms and demonstrates thesimulated images on a 99% Adobe display. The perception experiments
were conducted to the benchmark the spatial resolution performance ofthe subpixel arrangements against a real 423 ppi mobile display.
VHFp1 - 6

Comparison of Accommodation and Convergenceamong Real Object, 2D Display and 3D Display
When a Target Moves along the Depth Direction
S. Mochizuki, Y. Yokoyama, H. Takahira, M. Yamada
Tokai Univ., Japan

We examined the mismatch of convergence and accommodation whichwere said to be one of the causes of image sickness. We found that theconvergence and accommodation changed according to the depth
movement of the real target faithfully, but the 2D and 3D image didnʼtchange significantly.

153

VHF

This study is to evaluate subjective image qualities of curved OLED
displays in standard mode and movie mode respectively. Five image
quality indexes were designed to assess image qualities of RGB and
RGBW OLED displays, including preference, naturalness, vivid,
viewing angle and blackness.

Thursday
VHFp1 - 7

December 4
Analysis of Fundamental Characteristics ofMovement of Eye and Head When Indexing theTarget by the Finger
K. Kikuchi, H. Takahira, R. Ishiro, Y. Tanaka, M. Endou,
M. Yamada
Tokai Univ., Japan

We have developed a device to measure gaze and hand movements ina natural setting, and have been studying the fundamental
characteristics of eye, head and hand coordination. Here, we analyzed
the difference of head, eye, and hand coordination when gazing at atarget with or without finger pointing.
VHFp1 - 8

Analysis of Accommodation and Convergence while
Viewing 4K Images
H. Takahira, S. Mochizuki, Y. Yokoyama, M. Yamada
Tokai Univ., JapanWe analyzed the change of convergence eye movement andaccommodation while viewing 4K, 2K and 1K images. The
convergence eye movement occurred at all resolutions, but a difference
among resolutions was seldom observed. Slight accommodation
occurred, but no relation between convergence and accommodation
was clearly shown.
VHFp1 - 9

Analysis of Convergence and Accommodation while
Viewing 3D Movies
Y. Shiratori, M. Kitade, H. Takahira, S. Mochizuki,
Y. Yokoyama, M. Yamada
Tokai Univ., Japan

When some individuals watch 3D movies, they experience discomfort
that may be caused by a mismatch of convergence andaccommodation. Here we simultaneously analyzed the convergence
and accommodation of subjects watching 3D movies, focusing on theamount of disparity on the 3D image as a parameter.
VHFp1 - 10

Analysis of Accommodation and Convergence Eye
Movement among Medium When a Target Moves
along the Depth Direction
Y. Yokoyama, S. Mochizuki, H. Takahira, M. Yamada
Tokai Univ., Japan

We focused on the accuracy of accommodation and convergence while
subjects viewed a display that was moving in the depth direction. We
evaluated changes in accommodation and convergence angle during
depth-direction movement with different kinds of display media, fonts
and font sizes.

154

Thursday

December 4

VHFp1 - 11L Studies of 3D Display of Non-Invasive
Ophthalmoscopy for Diagnostic and Rehabitation
P.-M. Lin, C.-H. Chu, Y.-C. Fang
Nat. Kaohsiung First Univ. of S&T, Taiwan

VHFp1 - 12L Examination of Blue Light Spectrum Emitted from
OLED Displays
H. Isono, Y. Kuroda
Tokyo Denki Univ., Japan
We examined the blue region of the spectrum for an OLED display andan LCD. Since the OLED display has a sharp blue emission peak at
about 458 nm, similar to that for the LCD, consideration needs to begiven to health risks associated with blue light.
VHFp1 - 13L Color Conversion Method Overcoming Color
Tracking and Imperfect Additive Color Mixture
M. Takaya, Y. Amano*, Y. Shimodaira*Nat. Inst. of Tech. Numazu College, Japan*Shizuoka Univ., Japan
Color conversion method for displays is proposed. It overcomes color
differences caused by color tracking and imperfect additive color
mixture. As a result of applying the method for displays, color differenceof 1.9 is achieved. Itʼs about 2.3 times accurate in comparison with themethod of ICC-specified.
VHFp1 - 14L Evaluation on the Pixel Arrangement of Display
P. Dang, X. Zhang, X. Zhang, H. Zhu, X. Huang, X. Gao
Kunshan New Flat Panel Display Tech. Ctr., China
The differences in visual display quality among displays having different
pixel arrangements were evaluated by Likert scale. The results
indicated to show the quality was not only related to their PPIs, but also
their pixel arrangements because of the pixel aperture and the distance
between sub pixels.
----- Break -----

155

VHF

This research is proposed to study the examination of eyes via nearinfrared spectrum and a 3D ophthalmoscopy. The target captures 3D
images as a non-invasive diagnosis via visible light and near-infrared
light.

Thursday

December 4

17:00 - 18:00

Room 302 A

VHF3: Moving Image Quality
Chair:
Co-Chair:T. Kurita, NHK Media Tech., Japan
Y. Nakamura, Mitsubishi Elec., Japan

VHF3 - 1
17:00

Manual Pursuit Camera and a Method of Verifying
Pursuit Accuracy
M. Rejhon, J. Bergquist*, E. F. Kelley**, P. A. Boynton***Rejhon Techs., Canada*Nokia Techs., Japan**KELTEK, USA***NIST, USA

In order to verify the accuracy of pursuit cameras in tracking moving
objects on a display, we employ cascading synchronous markers thatmove below a moving box at the same pixel interval per frame. Underappropriate conditions, the markers can verify a velocity uncertainty ofless than one percent.
VHF3 - 2
17:20

A Method of Image Quality Evaluation for Adaptive
Temporal Aperture Control with Hold-Type Displays
T. Usui, H. Sato, Y. Takano, T. Yamamoto, K. Ishii
NHK, JapanAn adaptive technique of temporal aperture controlling in OELDs isadvantageous in improving motion image quality and suppressing
degradation of lifetimes. We therefore propose the method andconfirmed it to be effective using system for evaluating the method withan OLED of 25% temporal aperture and videos simulated motion blur.
Also presented in Innovative Demonstration Session (see p. 215)
VHF3 - 3
17:40

Image Quality Metrics for Color Breakup Based on
Perceived Image Simulation
K. Hirai, N. Torige, T. Horiuchi, S. Tominaga, T. Shibuya*,
F. Hasegawa*, M. Nose*
Chiba Univ., Japan*Ricoh, Japan

This paper presents image quality metrics for evaluating color
breakups of field-sequential color displays (FSCDs). We developed aperceived image simulator of FSCDs. The color breakup criteria arecalculated from the simulated perceived images. Our metrics evaluatedcolor breakups due to both smooth pursuit eye-tracking and saccades.
Author Interviews and Demonstrations
18:30 – 19:30

156

Friday

December 5
Friday, December 5

9:00 - 10:00

Room 201

VHF4: Display Legibility
Y. Shimodaira, Shizuoka Univ., Japan
N. Hiruma, NHK, Japan

VHF4 - 1
9:00

Model for Flicker Analysis in Reflective LCD in Low
Frequency Driving
Y. Kubota, R. Hatsumi, S. Fukai, D. Kubota, Y. Hirakata,
S. Yamazaki, M. Hirose*, M. Kasuga**,***
Semiconductor Energy Lab., Japan*Univ. of Tokyo, Japan**Sakushin Gakuin Univ., Japan***Utsunomiya Univ., Japan

Low-frequency driving of liquid crystal displays has attracted attention
as low-power-consumption technology. We propose an analytical modelthat can verify whether data rewrite operations are perceived as ﬂicker.
The validity of the proposed model is verified by comparing the resultsof the analysis and sensory evaluation.
VHF4 - 2
9:20

Effect of Font Types and Pixel Density of Electronic
Displays on the Legibility of Japanese Characters
Y. Hisatake, T. Kawamorita*, Y. Kanno, S. Takahashi**,
M. Ito**, H. Takahashi**Japan Display, Japan*Kitasato Univ., Japan**DNP, Japan

Investigated was the readability of Japanese characters with different
font-types and pixel-density on Electronic Displays, where the higher
pixel density resulted in the faster reading-speed. The difference isobvious in small font size, while the reading-speed also depends on the
font-types.
Also presented in Innovative Demonstration Session (see p. 212)
VHF4 - 3
9:40

Psychological Derivation of Optimal Line Space forLegible Japanese Documents Based on Scheffe’sMethod of Paired Comparison
Y. Yonezu, T. Tokui, N. Ishikawa, T. Matsui
Gunma Univ., JapanThe optimal line space lengths to make Japanese documents mostlegible are derived by using Scheffe's method of paired comparison to
examine the cause of the quantitative difference between theconventional psychological and theoretical results. The experimentallyderived optimal line space lengths are located between the two kinds ofconventional results.
----- Break -----

157

VHF

Chair:
Co-Chair:Friday

December 5

10:45 - 12:30

Room 201

DES3/VHF5: System Design and Evaluation in Augmented Reality
Special Topics of Interest on Augmented Reality and Virtual Reality
Chair:
Co-Chair:K. Morita, Nat. Traffic Safety & Environment Lab., Japan
K. Sakamoto, Panasonic, Japan

DES3/
VHF5 - 1:
10:45

Invited Simulation of Traffic Accident Scenarios with
an Augmented Reality Vehicle
N. Uchida, T. Tagawa, K. Sato
Japan Automobile Res. Inst., Japan

Observing drivers' behaviours by reproducing traffic accidents andconﬂict situations is important for developing advanced driver assistantsystems. For the purpose, an instrumented vehicle, named the JARIARV (Japan Automobile Research Institute - Augmented Reality
Vehicle), was developed to reproduce realistic traffic accident andconﬂict scenarios without endangering the driver.
DES3/
VHF5 - 2:
11:10

Invited The Realistic 3D Image Display Using Direct
Light Scanning Method
H. Horimai, K. Hattori*, T. Umezaki
3Dragons LLC, Japan*Chubu Univ., JapanThe realistic 3D image displays using Direct Light Scanning Method,so-called Holo-Table/Holo-Deck have become available. The features ofthese displays are not only large number views but also high density ofviews. Because of these features, users can see a 3D scene from any
directions with smooth motion parallax.
Also presented in Innovative Demonstration Session (see p. 215)
DES3/
VHF5 - 3
11:35

Fast Calculation Algorithm Based on Point-Based
Method for CGHs Using Polygon ModelY. Ogihara, Y. Sakamoto
Hokkaido Univ., Japan

Computer-generated holograms (CGHs), which are made by simulating
light propagation using a computer, are able to represent virtual
objects. However, an enormous amount of calculation time is needed tomake CGHs. We propose the fast calculation algorithm with pointbased method to make CGHs of the polygon model.

158

Friday
DES3/
VHF5 - 4
11:55

December 5
The Superiority of Widespread Monocular
Augmented Reality Presentation in a Manual Tracing
Task
A. Kitamura, H. Naito, T. Kimura*, K. Shinohara,
T. Sasaki**, H. Okumura**

We conducted two experiments involving a tracing task withaugmented reality image presentation covering a visual field observedin monocular or binocular mode. Performance on the tracing task was
better in monocular mode relative to binocular mode, demonstrating
the superiority of monocular AR presentation for performance of amanual task.
DES3/
VHF5 - 5L
12:15

A Fundamental Study of an Augmented Reality
System for Road Maintenance Services
K. Makita, C.-T. Chang, R. Ichikari, T. Okuma, T. Kurata
AIST, Japan

In this paper, a fundamental study of an augmented reality system forsupporting road maintenance is described. For realizing efficient roadmaintenance, we implemented a prototype augmented reality systemusing a camera fixed in the environment and a hand held device tovisualize degenerate parts of the roads.
----- Lunch ----13:30 - 14:45

Room 302 A

VHF6: Mobile Human Factors and ’Kansei’ Evaluation
Chair:
Co-Chair:J. S. Kimmel, Nokia Techs., Finland
T. Nakatsue, Sony, Japan

VHF6 - 1
13:30

Required Performances of Electronic Displays for
Smartphones Revealed by the Survey Results
Y. Hisatake, M. Takemoto*, S. Kubota**
Japan Display, Japan*Seikei Univ., Japan**Ergo Design Lab., Japan

Based on survey results on smart phones, including comparison withfeature phones investigated in six-years ago, we studied the required
performances of electronic displays for the smartphones.

159

VHF

Osaka Univ., Japan*Kansai Univ. of Welfare Scis., Japan**Toshiba, Japan

Friday

December 5

VHF6 - 2
13:50

An Overall Image Quality Model for Mobile Displays
under Different Lighting Conditions
R. Gong, H. Xu, M. R. Luo*
Zhejiang Univ., China*Univ. of Leeds, UK

An image quality model was proposed, applicable to various mobile
displays and different lighting conditions. Large-scale psychophysicalexperiments were carried out to visually evaluate seven perceptual
attributes of image quality. Based on interactions among these
attributes, the overall image quality was predicted by its constituent
attributes via multiple linear regression.
VHF6 - 3
14:10

Emotion Prediction Model of Museum Lighting
C.-J. Chou, H.-W. Luo, H.-S. Chen, M. R. Luo*Nat. Taiwan Univ. of S&T, Taiwan*Univ. of Leeds, UK

The aim of this paper is to establish an emotion model of indoor
lighting for museums. Two experiments were conducted under different
settings of CCT and illuminance in a large-scale museum and a smallscale laboratory, respectively. The emotion models were derived
according to the CCT values and illuminance levels of lighting
conditions in this experiment.
VHF6 - 4L
14:30

Super Hi-Vision (8K) Produces Stronger Depth
Sensation than 4K and Hi-Vision (2K).
Y. Tsushima, K. Komine, Y. Sawahata, T. Morita,
N. Hiruma
NHK, Japan

People who experience Super Hi-Vision (8K) display often reportstronger depth sensation than Hi-Vision (2K). Here, we
psychophysically compared depth sensation of composite stimuli with
2K, 4K, and 8K. The results clearly show that higher resolution
facilitates depth sensation. This indicates that SHV provides theaudiences with unparalleled depth sensation.
----- Break -----

IDW ’15The 22nd International Display Workshops
December 9 – 11, 2015
Otsu Prince HotelOtsu, Japan
http://www.idw.or.jp
160

Friday

December 5

15:15 - 16:20

Room 301

3D7/VHF7: Visual Perception for 3D System
Chair:
Co-Chair:

K.-H. Lee, Korea Photonics Tech. Inst., Korea
Y. Hisatake, Japan Display, Japan

3D7/
VHF7 - 1:
15:15

Invited Towards the ISO Guideline for Image Safety
during Stereoscopic Viewing

VHF

T. Bando, A. Iijima*, S. Yano**
AIST, Japan*Niigata Univ. Japan**Shimane Univ., Japan

In accordance with the development of ICT technologies, stereoscopic
3D images have been commercially available. At the same time,
biological inﬂuences have been reported, and a guideline to prevent
undesirable inﬂuences is expected. In this review, the bases and efforts
to establish such a guideline for image safety are discussed.
3D7/
VHF7 - 2
15:40

The Impact of Screen Size on 3D Flicker-Free
Luminance
P.-L. Sun, Y.-P. Sie, H.-S. Chen, M. R. Luo*Nat. Taiwan Univ. of S&T, Taiwan*Univ. of Leeds, UK

3D ﬂicker is one of the primary factors increasing visual discomfort
especial for shutter-glasses type 3D TVs. The ﬂicker-free luminance
was estimated visually and the results show itʼs inversely proportional
to the screen size. Besides, dimmable LED ambient lighting would
generate strong ﬂicker through the glasses.
3D7/
VHF7 - 3
16:00

Measurement of Visual Fatigue Induced by
Stereoscopic Display Using an Oddball Based
Event-Related Potential Experiment
P. Ye, H. Liang, J. Wang, F. Chen, S. Yang, J. Chen,
X. Wu, D. Gao
Nat. Sun Yat-Sen Univ., China

An oddball based event-related potential (ERP) experiment was
designed to assess the visual fatigue induced by stereoscopic display.
By using 3D stimuli without monocular cues, we controlled thesubjectsʼ disparity load and avoided fatigue induced by frequentchanged disparity. ERP signals were obtained for characterizing 3D
fatigue more accurately.
Author Interviews and Demonstrations
16:45 – 17:45
Supporting Organizations:Technical Committee on Electronic Information Displays, Electronics
Society, IEICE
Technical Group on Information Display, ITE

161

Wednesday

December 3

Workshop on Projection and Large-Area
Displays and Their Components
Wednesday, December 3
14:00 - 14:05

Room 201

Opening
Opening Remarks
14:00
S. Ouchi, Hitachi, Japan

14:05 - 15:30

Room 201

PRJ1: Solid-State Light Source Technologies for Projector
Chair:
Co-Chair:P. Hickl, Barco Control Rooms, Germany
H. Nakano, Barco, Japan

PRJ1 - 1:
14:05

Invited SiC Light Emitting Diode and Its Polarization
Control Using a Dressed Photon
T. Kawazoe, K. Nishioka, M. Ohtsu
Univ. of Tokyo, Japan

An optically polarized SiC light emitting diode was demonstrated. To
fabricate this device, it was annealed by Joule heating brought about
by a forward bias current under laser irradiation (dressed-photon–
phonon (DPP) annealing). The emission peak wavelength andpolarization both corresponded to those of the laser light irradiatedduring annealing.
PRJ1 - 2
14:30

High Power AlGaInP Red Laser Diode for Display
Applications
K. Kuramoto, T. Nishida, S. Abe, M. Miyashita, K. Mori,T. Yagi
Mitsubishi Elec., JapanThe broad stripe red LD for one chip projector, which is operated under
the pulse condition, was newly developed. The LD had a three-stripe
configuration and was assembled on the 9 mm TO. The LD showed the
maximum peak power exceeding 5 W under duty of 33%, 25℃.

162

Wednesday
PRJ1 - 3
14:50

December 3
A New Technology for Stabilization of Chromaticity
in Laser Projectors
Y. Ogi, Y. Seo, S. Ouchi
Hitachi, Japan

We have developed a technology for stabilization of chromaticity inlaser scan type projectors. The technology using correction functions(fR(T),fG(T),fB(T)) improves an instability of laser diode output in thewide temperature range. We have achieved the chromaticity accuracy
within 0.015 in the temperature range (0 – 50 C).
PRJ1 - 4
15:10

Lighting Technology for Automotive Headlamps

PRJ

T. Masuda, H. Tanaka, Y. Shibata, M. Hayakawa,
S. Yamamura
Koito Manufacturing, JapanWe are studying lamps that attract pedestriansʼ attention by displaying
information on the road surface. In this study, we calculated the lamp
brightness required to draw signals on the road surface, and confirmedthat ﬂashing the road surface signal at a specific frequency makes it
more visible to pedestrians.
----- Break ----15:45 - 17:15

Room 201

PRJ2: Vehicle Display
Chair:
Co-Chair:J. Thompson, Texas Instrs., USA
K. Ohara, Texas Instrs. Japan, Japan

PRJ2 - 1:
15:45

Invited Projection Technology Will Take Automotive
Head-Up Display to the Next Level
C. Kusaka, J. Kimura
Techno Syss. Res., Japan

With the increasing awareness of safety driving, various information is
obtained by vehicles. For providing these information to the driver, HUD
is suitable and Pico Projection technology has attracted to provide anadvanced HUD. This paper covers the market expectations and thepotential of Pico Projection technology for automotive HUD.
PRJ2 - 2:
16:10

Invited DLP Technology: Enabling the Next
Generation of Automotive Head-Up Display Systems
G. Pettitt, J. Ferri, J. Thompson
Texas Instrs., USA

Texas Instruments has developed key technology for the next
generation HUD for Automobiles. Car OEMs desire very large field ofview, bright, colorful, HUD systems with augmented reality. DLP
technology facilitates far virtual image distances, high brightness,mechanical packaging, and use of solid state light sources for next
generation HUD.
163

Wed./Thu.

December 3/4

PRJ2 - 3
16:35

Intelligent Head-Up-Display for Driver Assistance
S.-W. Cheng, C.-Y. Shih, J.-T. Hsu
Automotive Res. & Testing Ctr., Taiwan

We developed an intelligent heads-up display system in this study. That
displays integrated car warning information on 2.5 meters in front ofwindshield. Large Area of the image (26-in.) is realized by combining alaser projector, a screen and a concaved half mirror. Semi-transparent
display system is implemented in the car.
PRJ2 - 4
16:55

Development of Car Display System with Free-Form
ScreenS. Okagaki, J. Kondo, H. Sakamoto, S. Nakahara,
M. Kuwata, A. Heishi, H. Yoshii, K. Nakamura, K. Kojima,
M. UnoMitsubishi Elec., Japan

Mitsubishi Electric has developed a car display system with a free-form
screen, and the details of the system are described. The systemʼs freeform screen responds ﬂexibly to the increasing use of curves and otherdesign features in car interiors, and its easy visibility helps to promote
driving safety.
Author Interviews and Demonstrations
17:15 – 18:15

Thursday, December 4
9:00 - 10:25

Room 301

PRJ3: Projection Technologies
Chair:
Co-Chair:

D. Cuypers, imec, Belgium
H. Kikuchi, NHK, Japan

PRJ3 - 1:
9:00

Invited Speckle Reduction by Current-Induced
Magneto-Optical Effect Using P-type ZnO Device
N. Tate, T. Kawazoe, M. Ohtsu
Univ. of Tokyo, Japan

We experimentally demonstrated giant optical phase modulation using
a p-type ZnO device fabricated using a technique that we developed.
We achieved a sufficient reduction in the speckle noise of laser light byutilizing this effect to decrease the contrast of time-averaged speckle
patterns.

164

Thursday
PRJ3 - 2
9:25

December 4
Speckle Measurement of Laser Display by Means ofSimulating to Human Eye Perception
T. Fukui, K. Suzuki, S. Kubota
Oxide, Japan

In order to verify the speckle measurement by simulating to the humaneye perception, the experiment with changing the pinhole diameter ofthe observation was performed. The results were quite consistent withthe speckle theory and the designing of optical system was discussed
for appropriate and repeatable speckle measurement.
PRJ3 - 3
9:45

Speckle Reduction by Optimizing Pulse Width of
Drive Current for Red Laser Diodes

PRJ

T. Nishida*,**, T. Yagi*, H. Murata**, A. Koizumi**,Y. Fujiwara**, M. Takemi**Mitsubishi Elec., Japan**Osaka Univ., Japan

Speckle contrast reduction method is newly proposed. The method isbased on the active layer temperature control by optimizing the pulse
width of the laser diode drive current. The speckle contrast shows
minimum at the pulse width around 2-3 ms, which is suitable width for
one spatial light modulator projector.
PRJ3 - 4L
10:05

Difference in Speckle Reduction by Wavelength
Diversity between Two Types of Screen
H. Yamada, K. Moriyasu, H. Sato, H. Hatanaka
Ushio, Japan

Speckle reduction by using multiple wavelength lasers were measure
at two types of screen: matte screen and silver screen. Significant
differences in degrees of speckle reduction were seen between two
screens. The result was analyzed theoretically.
----- Break ----10:45 - 11:50

Room 301

PRJ4: Wearable Display
Special Topics of Interest on Augmented Reality and Virtual Reality
Chair:
Co-Chair:S. Shikama, Setsunan Univ., Japan
S. Ouchi, Hitachi, Japan

PRJ4 - 1:
10:45

Invited Laser Light Field Display Based on a Retinal
Scanning Array
M. Ide, K. Yoda, S. Kato
Citizen Holdings, Japan

We present a near-to-eye laser light field display system using a MEMS
scanner in combination with a microlens array. The system functions as
a high-resolution tiled retinal-scanning array and creates multiple
projection images on the retina. This gives the system a refocusing
feature that can be applied to near-to-eye displays.
Also presented in Innovative Demonstration Session (see p. 212)
165

Thursday
PRJ4 - 2
11:10

December 4Compact Optical Engine for SmartGlass
H. Baba, T. Totani, T. Hashizume
Seiko Epson, Japan

After commercializing SmartGlass “MOVERIO-BT100” in Nov. 2011,
EPSON has commercialized compact and lighter weight SmartGlass“MOVERIO-BT200” in June this year. New design of compact
projection lens and light-guide, and finer micro display is discussed andsummarized.
Also presented in Innovative Demonstration Session (see p. 213)
PRJ4 - 3
11:30

Light-Guide Optical Element Utilizing Notch Filters
for See-Through Glasses
X. Xiao, X. Lin, X. Tan
Beijing Inst. of Tech., China

Eyewear display is a new type of portable mobile devices. A new way
to achieve see-through glasses is proposed. Light-guide with an arrayof notch filters designed to partially reﬂect special narrow bands of thespectrum are used to coupling light from the microdisplay to the eye ofthe viewer.
----- Lunch ----13:30 - 14:50

Room 302 B

PRJ5: Projection Applications
Chair:
Co-Chair:F. Shevlin, DYOPTYKA, Ireland
Y. Asakura, Nittoh Kogaku, Japan

PRJ5 - 1
13:30

Ultra-Short-Throw 4K Projector with Solid-State
Light Source
T. Mochizuki, Y. Sato, J. Nishikawa, R. Miyao, H. Kikuchi
Sony, Japan

Sony has developed the worldʼs first ultra-short-throw 4K projector forhome-use. This projector carries a zooming 4K projection lens withshifting-lens function and new solid-state light source consisted of blue
laser diodes and a reﬂective phosphor wheel. The specification of the
projector and technologies stated above are described in this paper.
PRJ5 - 2
13:50

Stable Optical Projection Screen for Near Seamless
Display Walls
P. Hickl
Barco Control Rooms, Germany

Screens used in tiled rear projection display walls are environmentally
unstable and require an air gap between the tiles. These problems are
solved by using screens out of stable transparent base materials withintegrated optical functionalities, so that the wall appears like a stablesingle screen with no mechanical gap.

166

Thu./Fri.

December 4/5

PRJ5 - 3
14:10

Inorganic Alignment Layers for Liquid Crystal
Grating Devices
D. Cuypers*,**, H. D. Smet*,**, J. D. Smet*,**, P. Joshi*,**,
X. Shang*,***imec, Belgium**Ghent Univ., Belgium

The possibility of producing tunable liquid crystal alignments using only
inorganic obliquely evaporated alignment layers is explored and used
for realizing proof-of-principle liquid crystal diffraction gratings, as suchgratings promise to be very stable under high light ﬂuxes.
PRJ5 - 4L
14:30

A Compact, Low Cost, Phase Randomizing Device
for Laser Illuminated Displays

PRJ

F. Shevlin
DYOPTYKA, Ireland
A compact, low cost version of our phase randomizing deformablemirror for use in mass produced laser illuminated microdisplay-type
picoprojectors is described. Its speckle reduction performance is similar
to our other more complex designs.
Also presented in Innovative Demonstration Session (see p. 215)
14:50 - 15:02

Room 302 B

Short Presentation PRJp1: Projection
All authors of poster papers for the PRJp1 session will give a
brief, 3-minute oral presentations with no discussion time inadvance.
Author Interviews and Demonstrations
18:30 – 19:30

Friday, December 5
9:00 - 12:00

Exhibition Hall B

Poster PRJp1: Projection
PRJp1 - 1

A Wide Laser Head-Up Display with the Complex
Refractive Elements
J.-H. Wu, I.-K. Hsu, P.-J. Wu*, C.-Y. Chen
Nat. Yunlin Univ. of S & T, Taiwan*Nat. Chiao Tung Univ., Taiwan

A laser Head-Up Display (HUD) with the wide-view effect is proposed
to improve traffic safety for drivers. By using complex refractive
elements, we can make the original image (14 mm 14 mm) become awide image (32.6 mm 5 mm). Then, the virtual and magnifying wideimage is projected on the windshield.
167

Friday
PRJp1 - 2

December 5
A Study of Optical Design of Laser Projector
W.-T. Li, K.-D. Huang
Nat. Kaohsiung First Univ. of S&T, Taiwan

In this study, we propose a newly designed laser projector with local
dimming technique, including optical design of the structure adopted tothe telecentric beam path of telecentric relay optics. Using micro lensarray on the chip, we might improve contrast of image dramatically andeven and better uniformity.
PRJp1 - 3

Development of Column-Parallel LED Screen with
Flexible Shape
K. Sato*, A. Tsuji*, S. Suyama*, H. Yamamoto*,**,****Univ. of Tokushima, Japan**JST-CREST, Japan***Utsunomiya Univ., Japan

We have developed a high-frame-rate and ﬂexible LED screen. Our
LED screen employs column-parallel architecture, where every LEDline is controlled by a micro-controller and runs in parallel. Therefore,
latency is dependent of the number of lines. Furthermore, the LED
lines are separated and can be installed in 3D shape.
PRJp1 - 4Image Dispersion Compensation Based on SpatialMultiplexed Holographic Optical Elements
H.-T. Lin, H.-S. Syu, W.-C. Su
Nat. Changhua Univ. of Education, Taiwan

Holographic optical elements (HOEs) are important components for
optical system. However, for display application, HOE will generate
image dispersion. In order to solve dispersion, we use spatialmultiplexed of HOEs to correct the diffraction angle of different lightwavelength.
15:15 - 16:35

Marine Hall

PRJ6: Wearable Display and Application
Chair:
Co-Chair:K. Li, Wavien, USA
O. Akimoto, Sony, Japan

PRJ6 - 1L
15:15

Small and Lightweight Optical Module for HMD
J. Iwai, K. Suzuki
Telepathy Japan, JapanWe developed small, lightweight, high efficiency and low power
consumption display module for HMD. Our optical design with reﬂective
LCD made small sized display module applicable to HMD with minimal
cover on the wearersʼ face.
Also presented in Innovative Demonstration Session (see p. 213)

168

Friday
PRJ6 - 2L
15:35

December 5High Efficiency Optical System Using Small Light
Integrator for Head Mounted Display
T. Kawamura, T. Takaiwa*, D. Sakai*, Y. Kawakami*,
S. Ouchi
Hitachi, Japan*Hitachi Chem., JapanA light integrator in optical system for Head Mounted Display(HMD)
was developed to enhance optical efficiency. The integrator is a light
confinement rod containing fine particles for RGB light mixing. A HMD
using the integrator was achieved with luminance of 8,300 cd/m2 at the
LED power of 45 mW.
Calculation-Free 2D-to-3D Projection Screen Using
Nanomaterials
A. Kuroda, S. Sato, K. Kodama, H. Aoki, S. Maeda
Tokai Univ., Japan
3D projection screens are now in common use. In general, 3D imaging
techniques require high computing power, specific software, and heavy
large-scale hardware. In contrast, we have developed a calculation-free
2D-to-3D automatic conversion projection screen that uses the natureof specific nanomaterials.
PRJ6 - 4L
16:15

Liquid-Cooled Laser Phosphor for Digital Projection
K. Li
Wavien, USA

This paper describes a laser excited phosphor suspended in acirculating liquid allowing high power and high efficiency operations
suitable for screen brightness of over 30,000 lumens. Experiments arebeing performed using fiber-coupled laser with 10 W laser output
powers from a 0.4 mm diameter fiber optic with 0.22 NA.
Author Interviews and Demonstrations
16:45 – 17:45
Supporting Organizations:
Laser Display Technology Research Group, Optical Society of Japan
Technical Group on Information Display, ITE

169

PRJ

PRJ6 - 3L
15:55

Wednesday

December 3

Workshop on Electronic Paper
Wednesday, December 3
14:00 - 15:25

Room 302 A

EP1: Electrophoretic Displays
Chair:
Co-Chair:G. Zhou, South China Normal Univ., China
M. Tsuchiya, Innova Dynamics, Japan

EP1 - 1:
14:00

Invited Three Particle MicroencapsulatedElectrophoretic Display
M. Wang, C. Lin, H. Du, H. Zang, M. McCreary
E-Ink, USA

E Ink Spectra displays utilize black, white and red engineered particles
in a colorless solvent to achieve red plus B/W independent opticalstates without a color filter array. The technology, performance, andapplications of Spectra will be described.
EP1 - 2:
14:25

Invited Biprimary Dual-Particle Electrokinetic
Displays with 70% Reflectance and Greatly
Improved Color Saturation
S. Mukherjee, J. Heikenfeld, N. Smith*, M. Goulding*,
C. Topping*, S. Norman*, Q. Liu**, L. Kramer**
Univ. of Cincinnati, USA*Merck Chems., UK**Hewlett Packard Res. Lab., USA

We demonstrate the “Biprimary” color system with dual-particle
dispersions in a 3-electrode in-plane electrophoretic cell and a moreadvanced electrokinetic device structure to generate 4 color states.
Preliminary contrast ratio reaches 10:1. The newly improved
electrokinetic structure improves the color saturation greatly and thewhite state reﬂectance now reaches 70%.
EP1 - 3L:
14:50

Invited TFT Free Active Matrix Addressable
Electronic Paper Display
M. Hong, H. W. Yoon, K. H. Yang, S. Han*, B. Bae*,J. Lee*, S.-W. Lee**, M. Kim**, J. Kim**
Korea Univ., Korea*Hoseo Univ., Korea**Kyung Hee Univ., Korea

We have developed a simple metal-insulator-metal (MIM) structure forfast-moving ball actuator (FMBA) based on technology. In order toclarify the operation mechanism of FMBA, fundamental physics wasinvestigated. Simplified and optimized driving scheme showed that
FMBA was active matrix addressable without assistance of thin filmtransistors, additional storage capacitors.

170

Wednesday
EP1 - 4L
15:10

December 3
Stretchable and Flexible Electrophoretic Image
Display
T. Kitamura, T. Nakamura, N. Kobayashi, T. Sawada*,
T. Abe*, S. Yoshioka*
Chiba Univ., Japan*Panasonic, JapanThe stretchable and ﬂexible electrophoretic image display device using
the stretchable polymer film coated with the electrically conductive
layer was produced. The stretchable polymer film was composed
primarily of epoxy resin and used carbon nanotube for an electricallyconductive layer.
----- Break ----15:45 - 17:20

Room 302 A

EP2: Various Technologies for e-Paper
M. Omodani, Tokai Univ., Japan
N.-S. Roh, Samsung Display, Korea

EP2 - 1:
15:45

Invited Review of Paper-Like Display Technologies
Z. Yi*, L. Wang*, P. Bai*,**, B. Tang*,**, D. Yuan*,**,
M. Jin*,**, L. Shui*,**, R. A. Hayes*,**, G. Zhou*,***South China Normal Univ., China**Guohua Optoelect., China

Paper-like displays have received much attention after electrophoreticbased electronic paper displays were commercialized in 2004 for their
excellent reading experience and ultra-low power consumption. In thispaper, we give an overview on various paper-like display technologies
with emphasis on the electroﬂuidic displays.
EP2 - 2:
16:10

Invited The Progress of Electrowetting Display and
Its Applications
L.-C. Chen, J.-W. Shiu, W.-Y. Cheng, K.-L. Lo,
R.-L. Chang
ITRI, Taiwan

Electrowetting utilized interfacial tension of polar liquid/non-polar liquidand electromechanical force. Owing to its high aperture ratio, fastswitching speed and low power consumption characteristics, thistechnology is very promising for reﬂective, transmission andtransparent display applications. In this article, the development
progress of electrowetting display in ITRI was introduced.
EP2 - 3:
16:35

Invited Frontlighting Technologies for Reflective
Displays: e-Papers, MEMS, MEOMS, LCDs
K. Käläntär
Global Optical Solutions, Japan

Frontlighting reﬂective displays such as e-Papers, MEMS, MEOMS,LCDs, using edge-lit frontlight unit (FLU) is a unique method tomodulate the displayed images and recover the optical characteristics
under the dim environment. In this paper the concept of fronlighting
and the recent developments of FLU are reported.
171

EP

Chair:
Co-Chair:Wed./Thu.
EP2 - 4L:
17:00

December 3/4
Invited Electrochromic Smart Windows ‑The Power
to Change
J.-C. Giron
SAGE, USA

Inefficient windows are responsible for over 30% of building energy
consumption. But such problem is solvable with electrochromic (EC)glass that actively controls the daylight and solar heat. We will present
why and how such technology is critical for more efficient andsustainable buildings through the example of commercialized
SageGlass.
Author Interviews and Demonstrations
17:15 – 18:15

Thursday, December 4
9:00 - 10:05

Marine Hall

EP3: Chromic Displays
Chair:
Co-Chair:N. Kobayashi, Chiba Univ., Japan
M. Higuchi, NIMS, Japan

EP3 - 1:
9:00

Invited Thermo-Switchable Imaging Media with Dual
Emissive and Reflective Modes
K. Nakamura, K. Ogasawara, Y. Kobayashi,
K. Kanazawa, N. Kobayashi
Chiba Univ., Japan

Multi-functional composite films showing thermoresponsive switching of
its absorption and emission were demonstrated by using
thermochromic leuco dyes, developer and luminescent molecules. The
composite films enabled control of the coloration and emission by
thermal stimuli, resulting in RGB multicolor dual mode representation.
EP3 - 2
9:25

Improvement of Coloration Properties ofElectrochromic Cell by Immobilizing Organic
Electrochromic Molecules on the ElectrodeN. Ura, K. Nakamura, N. Kobayashi
Chiba Univ., Japan

Electrochromism (EC) is known as electrochemical reaction exhibitingcoloration, and is applicable to a new imaging device. In this paper, we
report EC molecule-modified electrode using phthalate derivatives. The
EC molecule-modified electrode showed vivid magenta color by
reduction reaction, better EC properties than solution based EC cell.

172

Thursday
EP3 - 3
9:45

December 4
Design and Preparation of Metallo-Supramolecular
Polymers with Improved Electrochromic Properties
M. Higuchi*,***NIMS, Japan**JST-CREST, Japan

Metallo-supramolecular polymers were synthesized by thecomplexation of various metal ions with ditopic ligands. They showed
electrochromic properties with different colors or multi-colors. Metallosupramolecular polymers with 3-D structures were also prepared usinga tritopic ligand. They exhibited better electrochromic properties thanthe linear polymers due to the porous film structure.
10:05 - 10:38

Marine Hall

Short Presentation EPp1: Electronic Paper
All authors of poster papers for the EPp1 session will give a brief,
3-minute oral presentations with no discussion time in advance.

EP----- Break ----Author Interviews and Demonstrations
18:30 – 19:30

13:30 - 16:30

Exhibition Hall B

Poster EPp1: Electronic Paper
EPp1 - 1

Improvement of Response of an Electrophoretic
Display by Controlling Liquid Flow
K. Sato, M. Omodani
Tokai Univ., Japan

We have focused on the liquid ﬂow generated by particle movement in
a display cell. We have tried to control the liquid ﬂow by introducing
guide blocks in the cell. We have suggested that appropriatearrangements of display cell structure can effectively improve theresponse time of electrophoretic displays.
EPp1 - 2

Development of Twisting Balls for e-Paper by a
Microchannel Device
H. Akita, Y. Awatsu, Y. Takizawa
Soken Chem. & Eng., Japan

We successfully mass-produced twisting ball display by utilizing theoriginal fine particle creation technology used microchannel device. We
can offer display materials that match the trend of the times and meetthe needs of customers, such as clock, message board and variabledisplay poster.

173

Thursday
EPp1 - 3L

December 4Power-Saving Bar Indicator for Applied Voltage
Utilizing Twisting Ball Technology
Y. Komazaki, T. Torii
Univ. of Tokyo, Japan

We fabricated a twisting ball display whose two facing pair electrodes
were not parallel and the gap between two electrodes varied graduallywith location. This display could indicate the strength of applied voltage
as the length of the colored region.
EPp1 - 4L

Polyaniline-Silica Nanocomposite Particles as
Display Elements for Electronic Paper Sheets
T. Sugiura, T. Syoji, S. Maeda
Tokai Univ., Japan

We have prepared organic conducting particles which utilize polyaniline
as conducting parts and silica as dispersants. The particles ofpolyaniline and silica represent a potentially useful processable form ofpolyaniline. We demonstrated the polyaniline-silica particles can beutilized as display elements in electrophoretic display due to their highcolloid stabilities.
EPp1 - 5L

Reflective Electrochromic Display (ECD) Having
Memory Effect Utilizing Electrodes Modified byElectrochromic and Redox Polymer
T. Nakamura, T. Kitamura, N. Kobayashi
Chiba Univ., JapanWe developed a reﬂective electrochromic display (ECD) having
memory effect utilizing a pair of electrodes modified by electrochromic
and redox polymer. At first, the ECD is in colorless state, but by
applying appropriate negative voltage, colorless state is changed intocolor state, which is maintained without applying additional voltage.
EPp1 - 6L

Reversible Change of Primary Colors CMYK, RB
and Green on Silver Nanoparticles by Pulse Width
Modulation via Localized Surface Plasmon
Resonance
M. Ichikawa, R. Tejima, T. Tani*, T. Uchida
Tokyo Polytechnic Univ., Japan*The Society of Photography & Imaging of Japan,Japan

A novel electro-chromic device achieved reversible change of primarycolors-cyan, magenta, yellow, and black (CMYK). The device can also
red, blue and green by pulse width modulation (PWM). The green color
was achieved by low voltage PWM which forms uniform large nanoparticles with a coupling plasmon resonance.

174

Thursday
EPp1 - 7L

December 4
Niobium Films as Rewritable Imaging Media forElectronic Paper
H. Aoki, I. Komatsu, K. Matsunaka, S. Maeda
Tokai Univ., JapanWe are studying an easy method for preparing colored Nb by anodeoxidization. The focus of this paper is to explore the possibility of thiscolor Nb as rewritable media for use in electronic paper. We found that
our Nb can be used as rewritable media by controlling preparation
conditions.
EPp1 - 8L

Study of Rewritable Paper Utilizing Kapok Fibers
Containing Thermo-sensitive Inks
M. Yukawa, K. Noda, A. Kuroda, S. Maeda
Tokai Univ., Japan

EPp1 - 9L

Proposing a Baseline Setup for Readability Using a
Visual Analog Scale
T. Koizuka, Y. Ishii, T. Kojima*, N. Ishio, P. R. Lege,
M. Miyao
Nagoya Univ., Japan*Chubu Gakuin Univ., Japan

We investigated in the readability of the e-paper display devices. We
conducted subjective evaluations using a Visual Analog Scale, and thesubjects reading efficiency. According to the results, we propose abaseline setup for readability of these devices from the analysis of theassociation between subjective evaluation and reading efficiency.
EPp1 - 10L

Difference in Readability of the Contrast Ratio of
Mobile Devices
K. Iwata, Y. Ishii, T. Koizuka, S. Matsunami, N. Ishio,
P. R. Lege, T. Kojima*, M. Miyao
Nagoya Univ., Japan*Chubu Gakuin Univ., Japan

We carried out an experiment to evaluate the readability of e-books
and ordinary paper text. In the experiments, we conducted subjective
evaluations and measured the readability of each device with different
contrast ratios. This study found a dependency between readability andthe contrast ratio of the text of each device.

175

EP

The focus of this work is to develop a novel paper sheet which
integrating Kapok fibers containing thermo-sensitive inks inside. The
Kapok fiber is natural half-transparent hollow tube whose inner andouter diameters are 18 and 20 μm respectively. We think thistechnology can be utilized to rewritable paper.

Thursday

December 4

EPp1 - 11L

Contribution of Character Sizes to the Readability ofMobile Devices
Y. Ishii, T. koizuka, K. Iwata, N. Ishio, S. Matsunami,
P. R. Lege, T. Kojima*, M. Miyao
Nagoya Univ., Japan*Chubu Gakuin Univ., Japan

We carried out an experiment to evaluate the readability of e-books
backlit LCD, and ordinary paper text. In the experiments, we conductedsubjective evaluations, measured the subjects reading time, andcalculated their percentage of correct answers. This study found adependency between readability and the character sizes of eachdevice.

IDW Best Paper AwardIDW Outstanding
Poster Paper Award
These awards will go to the most outstanding papers
selected from those presented at IDW ’14.
The 2014 award winners will be announced on the
IDW website: http://www.idw.or.jp/award.html

Innovative Demonstration Session
by Oral and Poster Presenters

Live demonstrations of emerging information
display technologies
16:45 – 19:30 Thursday, December 4, 2014
12:30 – 15:15 Friday, December 5, 2014
Exhibition Hall B
See Page 212 - 215 for details
176

Thursday

December 4Workshop on MEMS and Emerging
Technologies for Future Displays and Devices
Thursday, December 4
9:00 - 9:10

Room 201

Opening
Opening Remarks
9:00

10th Anniversary Opening Remarks

M. Nakamoto
Shizuoka Univ., Japan
9:10 - 10:30

Room 201

MEET1: Emerging Quantum Dots and Nanotechnologies
Chair:
Co-Chair:W. Milne, Univ. of Cambridge, UK
Y. Bonnassieux, Ecole Polytechnique, France

MEET1 - 1: Invited Images and Cathodoluminescent Spectra of
9:10
Red and Green Quantum DotsMEET

J. Silver, G. R. Fern, T. G. Ireland, S. Coe-Sullivan*,J. S. Steckel*
Brunel Univ., UK*QD Vision, USA
Cathodoluminescent imaging of the visible light emitted from green andred quantum dots is reported. The shape and uniformity of individual
particles is observed in the electron image and this can have the image
created from the visible light emitted from the particle bycathodoluminescence simultaneously superimposed on it.
MEET1 - 2: Invited Progress in Quantum Dots for Liquid Crystal
9:30
Displays
S. Coe-Sullivan
QD Vision, USA
Products and product announcements currently place QDs in TVs,
monitors, notebooks and tablet PCs, and they will continue toproliferate and gain market share in these and other display market
segments. However, there are many important trends, in productperformance and standards that continue to drive this market adoption.

177

Thursday

December 4

MEET1 - 3: Invited Red Quantum Rods under the Electron
9:50
Microscope
G. R. Fern, J. Silver, T. Jochum*, J. S. Niehaus*,F. Schröder-Oeynhausen*, H. Weller*
Brunel Univ., UK*CAN, Germany
Cathodoluminescent (CL) imaging of the visible light emitted fromquantum dot in rods (DRs) is reported. Their shape and uniformity isobserved in the images and the image of the particles created fromtheir visible light collected simultaneously is shown. The CL emission
spectrum collected from the DRs is reported.
MEET1 - 4: Invited Advancements in On-Chip Quantum Dots for
10:10
LED Backlights in Wide Color Gamut LCD Displays
J. Osinski
Opticalogic Advisors LLC, USA
The implications of integrating quantum dots into an LCD display byplacing them directly into an LED backlight package are described.
This approach allows drop-in replacement of existing phosphor-based
LEDs without requiring a system redesign, thereby providing cost, color
gamut, and efficiency benefits simultaneously.
----- Break ----10:45 - 12:45

Room 201

MEET2: Fundamental Components and Process Technologies
Chair:
Co-Chair:D. Pribat, Sungkyukwan Univ., Korea
F. Templier, CEA-LETI, France

MEET2 - 1: Invited CNTs and Graphene for X-ray Systems and10:45
Other Applications
W. I. Milne*,**, R. J. Parmee*,**, J. Cameron**, C. Li***,W. Lei***, B. Wang***, M. T. Cole*,***Univ. of Cambridge, UK**Cambridge X-ray Syss., UK***Southeast Univ., China

Carbon based materials have been investigated as possible fieldemission sources for a plethora of applications. This paper will describe
our recent work on the design, growth and optimisation of CNTs forapplication in pulsed X-ray sources and end with our recent work on
the use of graphene.

178

Thursday

December 4

MEET2 - 2: Invited Fabrication of Lighting Lamp with Carbon
11:05
Nanotube Emitters Beam (C-beam)
J. S. Kang, H. R. Lee, K. C. Park
Kyung Hee Univ., Korea
High brightness lighting lamp with carbon nanotube based electron
beam (C-beam) were fabricated. The brightness of the lamp shows
more than 30,000 cd/m2 with lower driving power less than 5 W. The
fabrication and performance of the vacuum lamp will be presented.
MEET2 - 3
11:25

Sub-Micron Transparent Metal Mesh Conductor for
Touch Screen Displays
B. Kobrin, I. McMackin, J. Geddes, O. Seitz, M. Aryal,
J. Wassei
Rolith, USA

Rolith, Inc. reports on superior performance of NanoWeb: sub-microntransparent metal mesh conductor for touch screen displays with hightransmission (~ 96%), low sheet resistance (~ 4 Ohm/sq), absoluteinvisibility of metal mesh to the human eye, and complete elimination of
Moiré fringes, fabricated on glass and PET film.
MEET2 - 4: Invited Gaussian Density-of-States Model for
11:45
Organic Devices
Ecole Polytechnique, France
In this presentation, we systematically study the effect of electronic
structure on the charge carrier injection and transport as well as thelow voltage current-voltage characteristics of organic rectifying diodes
based on Gaussian disorder model.
MEET2 - 5
12:05

Crystallization Technique with Carbon Nanotube
Electron Beam (C-beam) Exposure Technique
H. T. Park, J. S. Kang, J. H. Hong, H. Lee, W. J. Kim,
K. C. Park
Kyung Hee Univ., Korea

In this study, we propose a novel crystallization process that is calledcarbon nanotube electron beam (C-beam) exposed crystallization
technique. When C-beam is exposed on a-Si:H films, exposed area iscrystallized to poly-Si. Poly-Si thin films has higher crystalline
properties with lower hydrogen contents.

179

MEET

Y. Bonnassieux, S. Jung, C. H. Kim, G. Horowitz

Thursday
MEET2 - 6
12:25

December 4
Cathodoluminescence Properties of Silicon Thin
Films with Carbon Nanotube Electron Beam
(C-beam) Exposure Technique
W. J. Kim, J. S. Kang, H. R. Lee, J. H. Hong, H. T. Park,K. C. Park
Kyung Hee Univ., Korea

In this study, we investigated the cathodoluminescence (CL) propertiesof silicon thin films with carbon nanotube electron beam (C-beam)
exposure technique. An intensive CL emission spectrum is observed in
the visible range of 300 ~ 800 nm and the origin of the CL were studied
for silicon optoelectronic devices.
----- Lunch ----13:30 - 15:05

Room 201

MEET3: EL Quantum Dots Technologies
Chair:
Co-Chair:S. Coe-Sullivan, QD Vision, USA
J. Silver, Brunel Univ., UK

MEET3 - 1: Invited All Solution Processed QLED
13:30
J. Jang, J. E. Lee
Kyung Hee Univ., Korea
This paper reviews inverted quantum-dot light emitting diodes (QLEDs)
using all solution process. To improve the device performances, theinverted QLED is designed with stacked electron transporting layer(ETL). The stacked ETL and doped HTL reduced electron and holetransport barriers to QDs, respectively, and could improve the device
efficiency.
MEET3 - 2: Invited Efficient Quantum Dot Light-Emitting Diodes
13:50
by Improving Charge Carrier Balance
J. Kwak, M. Park*, H. Jung*, J. Lim**, W. Bae***, K. Char*,S. Lee*, C. Lee*
Dong-A Univ., Korea*Seoul Nat. Univ., Korea**Los Alamos Nat. Lab., USA***KIST, Korea
We demonstrate efficient full-color quantum dot (QD) based lightemitting diodes by employing an inverted device structure with zincoxide (ZnO) electron injection layer. Charge carrier balance is improvedby inserting a thin charge blocking layer between the ZnO layer and
QD layer, resulting in high efficiency and reduced efficiency roll-off.

180

Thursday

December 4

MEET3 - 3: Invited Quantum Dot Light-Emitting Diodes for
14:10
Efficient, Solution-Processed Flat Panel Displays
J. R. Manders*, Y. Zheng*, L. Qian*, Y. Yang*, A. Titov*,
J. Hyvonen*, J. Tokarz-Scott*, W. Cao**, J. Xue**,
C. Morton*, P. H. Holloway*,***NanoPhotonica, USA**Univ. of Florida, USA

Colloidal quantum-dot, solution-processed hybrid light-emitting diodes(S-QLEDs) that exhibit current efficiencies of 15, 61, and 4.4 cd/A,
power efficiencies of 18, 63, and 2.4 lm/W, and external quantum
efficiencies up to 12%, 14%, and 10.7% for red, green, and deep blue
emitting QLEDs are reported.
MEET3 - 4
14:30

Enhanced Efficiency of Quantum Dot Light-Emitting
Diodes by Modifying Sol-Gel Based Metal-DopedZnO Electron Transport Layer
H. Jung, M. Thambidurai, J. Lim, K. Char, S. Lee, C. Lee
Seoul Nat. Univ., Korea

We studied the effect of electron mobility of an electron transport layer
varied by the annealing temperature of sol-gel processed galliumdoped zinc oxide thin films on the electrical and optical properties of
inverted quantum dot based light-emitting diodes.

K. Aoshima, H. Kinjo, K. Machida, D. Kato, K. Kuga,
H. Kikuchi, N. Shimidzu
NHK, Japan
We have developed a magneto-optical spatial light modulator (the spin
SLM) controlled by a transistor backplane which plays a crucial role forextending large scale display. It has 10 5-pixels with their size of 0.5
μm. We have successfully confirmed its contrast change bymagnetization switching in light modulation elements.
----- Break -----The 50th Anniversary Speech of PDPs

“Summing Up of the PDP History
and a Peek at Plasma
Technologies Beyond Displays”(FED4 – 1)
Friday, December 5, 2014
15:15 - 15:55
Room 302B
See page 118 for detail
181

MEET

MEET3 - 5L Magneto-Optical Spatial Light Modulator Driven by
14:50
Si Based MOS-FET Backplane for Holography
DisplayThursday

December 4

15:15 - 16:55

Room 201

MEET4: Novel Materials and Components
Chair:
Co-Chair:

K. C. Park, Kyung Hee Univ., Korea
G. R. Fern, Brunel Univ., UK

MEET4 - 1: Invited Graphene-Silicon Composites for Improved
15:15
Solar Cells
E. Moyen, J. Jo, G.-D. Kwon, Y. W. Kim, Y. Lee, D. Pribat
Sungkyunkwan Univ., Korea
We propose an unconventional approach for solar cell fabrication,
based on semiconductor wires (or nanoparticles) sandwiched between
graphene sheets. Typically, the wires are grown separately, harvested
and then spread and sandwiched between respectively n- and p-type
doped graphene sheets, thus forming horizontal, ﬂexible p-n arrays.
MEET4 - 2
15:35

Conducting Graphene Thin Film on Glass with
Electron Beam Irradiation
G. C. Lim, J. S. Kang, J. S. Ahn, K. C. Park
Kyung Hee Univ., Korea

We fabricate the transparent graphene film on glass using spin coating
method, and irradiate the electron beam on the film. From microscopic
structural analysis, enhanced grain size and ﬂattering of grain wereconfirmed. The resistance decreases from > 100 MΩ to 10 kΩ,
resulting transparent graphene electrode formation.
MEET4 - 3: Invited High Target Utilization Sputtering of Thin
15:55
Film Metal Oxides for Large-Area Electronics
A. J. Flewitt
Univ. of Cambridge, UKHigh target utilization sputtering is reviewed. A remote, inductivelycoupled plasma generator is used to produce a sputtering plasma,
which is then confined by electromagnets and guided onto a metallic
target, which is itself subjected to a dc voltage bias. This allows very
high quality metal oxides to be deposited.
MEET4 - 4
16:15

Super Smart Window-its Energy Design and Some
Early Research
H. Morita, H. Yoshida
Tokyo Univ. of Sci., Yamaguchi, JapanWe designed the window light-shielding system by using the electricenergy generated by the built-in transparent solar cell. In our system ofcombined solar cell and electrochromic light absorption control layers,
the energy creation and its effective consumption can be carried out on
the same glass window plain.

182

Thursday
MEET4 - 5
16:35

December 4
Resonator-Type Infrared Detector Released by
Plasmaless Sacrificial Si Etching
J.-H. Jeong, S. Kumagai, S. Tajima*, T. Hayashi*,
K. Yamakawa**, M. Sasaki
Toyota Tech. Inst., Japan*Nagoya Univ., Japan**Katagiri Eng., Japan

Resonator-type infrared detector is fabricated from thin SiO2 and Cr
films. New technique of the plasmaless sacrificial Si etching is applied
for releasing the resonator without the plasma-related damage. The
resonator shows the large ratio of the resonant frequency shift -580
ppm/K against the substrate temperature indicating the high sensitivity.
----- Break ----17:00 - 18:40

Room 201

MEET5: Nanotechnology Display and Imaging
Chair:
Co-Chair:J. Jang, Kyung Hee Univ., Korea
A. J. Flewitt, Univ. of Cambridge, UK

MEET5 - 1: Invited High-Brightness GaN LED Arrays Hybridized
17:00
on Silicon Interconnect at a Pixel-Pitch of 10 μm

MEETF. Templier, H. Bono, J.-M. Bethoux, F. Marion,
I.-C. Robin, M.-A. di Forte-Poisson*
CEA-LETI, France*3-5 Lab, France
We have developed high-brightness GaN LED arrays hybridized on
Silicon interconnect at a pixel pitch of 10 µm. The GaN LED arrays has
been developed and hybridized on silicon interconnect using the
microtube technology. The devices provide high optical power andbrightness over 1 x 107 cd/m².
MEET5 - 2: Invited Mechanical Strengthening of Silicon Torsion
17:20
Bar of Scanning Micro Mirror by Hydrogen Anneal
S. Yoshida, S. Tanaka, M. Esashi
Tohoku Univ., Japan
We report on hydrogen anneal to enhance the torsional fracture
strength of dry-etched single crystal silicon (SCS) microstructures. For
the SCS-wafer-based device, the dry-etched surface irregularity weresmoothed out, and the fracture strength of the torsion bar was
successfully improved by a factor of 3 by 120 min. hydrogen anneal.

183

Thursday

December 4

MEET5 - 3: Invited Formation of Conductive AlN by a New
17:40
Spontaneous Via Holes Technique and Developmentof Vertical Deep Ultra-Violet Light Emitting Device(RefV-LED)
N. Kurose, Y. Aoyagi
Ritsumeikan Univ., JapanWe developed a new type vertical ultra-violet light emitting device using
a new spontaneous via holes formation technique in AlN epitaxial layergrown on n+Si substrate, which makes insulating AlN to be conductive.
We have succeeded in fabricating and operating substrate removal freevertical DUV-LED (RefV-LED) using the technique.
MEET5 - 4: Invited High Brightness Microdisplays by Monolithic
18:00
Integration of III-V LEDs and Thin Film Silicon
Transistors
V. W. Lee
Lumiode, USA
There is increasing demand for see-through, glasses-like displays, but
a major technological barrier is the brightness of microdisplays
currently available. To overcome this challenge, we integrate thin film
polycrystalline silicon transistors with III-V LED materials for a
combination of an efficient light source and high mobility drive
transistors.
MEET5 - 5: Invited Quantum Photonic Imager (QPI): A New
18:20
Display Technology and Its Applications
H. S. El-Ghoroury, Z. Y. Alpaslan
Ostendo Techs., USA
QPI is an emissive spatial light modulator (SLM) that combines thelight generation and modulation together at the pixel level, eliminating
the waste in most existing SLMs in which light is separately generated,collimated then modulated. This paper explains the QPI architectureand examples of QPIʼs applications in various areas.
Author Interviews and Demonstrations
18:30 – 19:30

IDW ’14 Tutorial in Japanese
Organized by SID Japan Chapter
Tuesday, December 2, 2014
Room 301, 3F
TOKI MESSE Niigata Convention Center
Detailed information is available on
http://www.sid-japan.org
184

Thursday

December 4Workshop on
Display Electronic Systems
Thursday, December 4
9:00 - 10:35

Room 302 B

DES1: Display Technologies in Augmented Reality
Special Topics of Interest on Augmented Reality and Virtual Reality
Chair:
Co-Chair:K. Kiyokawa, Osaka Univ., JapanK. Makita, AIST, Japan

DES1 - 1:
9:00

Invited Diminished Reality Based on Image
Inpainting for Visually Removing Real Objects inReal Time
N. KawaiNara Inst. of S&T, Japan

We introduce our diminished reality method that removes real objects
from video images in real time. The proposed method achieves
generation of high-quality background textures and temporal
coherence of textures for 3D scenes by analyzing the backgroundgeometry using a Visual-SLAM method.
Also presented in Innovative Demonstration Session (see p. 213)
DES1 - 2:
9:25

Invited HMD Technologies for AR
K. Kiyokawa
Osaka Univ., Japan

DES1 - 3:
9:50

Invited Fog Display as a Co-creative Expression
Media
Y. Miwa, S. Itai, Y. Terada
Waseda Univ., Japan

In our view, fog displays are characterized by the lack of any clear
distinction between the image and actual spaces. That is, fog displays
are essentially borderless. The development of the embodied media
and support of co-creative expression are demonstrated in the“Massive fog display” and “Fog box” systems, respectively.
Also presented in Innovative Demonstration Session (see p. 213)

185

DES

This article introduces technology trends and future visions of head
mounted displays (HMDs) for augmented reality. Specifically, recent
research on wide field-of-view head mounted visual displays, and multifocal head mounted displays will be introduced, and future challenges
and visions will be discussed.
Also presented in Innovative Demonstration Session (see p. 213)

Thursday
DES1 - 4
10:15

December 4
Security Door
H.-F. Wang, C.-C. Lan, J.-Y. Huang, T.-H. Lin, H.-S. Chen
Nat. Taiwan Univ. of S&T, Taiwan

This paper presents a practical “security door” to create an illusion ofseeing outdoor view through the indoor. This illusion is achieved bytransferring information from two cameras which are disposed at
outdoor area, and then their images are cast on the indoor by a display.
----- Break ----10:45 - 12:20

Room 302 B

DES2: Image Processing
Chair:
Co-Chair:A. Ninan, Dolby Labs., USA
A. Sakaigawa, Japan Display, Japan

DES2 - 1:
10:45

Invited Evolution of Displays through Advances in
Next Generation Video
A. Ninan, S. Daly
Dolby Labs., USAIn pursuing pleasing lifelike images, display systems have beenchasing after resolution. One aspect overlooked is dynamic range andcolor. The factors driving toward this dimension of improvement as thenext stage of display evolution are presented. The Dolby Vision format
and HDR displays demonstrate the bridge towards this goal.
Also presented in Innovative Demonstration Session (see p. 213)
DES2 - 2:
11:10

Invited Pursuit of Visually Lossless Compression
and Practical Tradeoffs in Display Systems
D. F. Stolitzka
Samsung Display, USA

Visually lossless compression for display streaming is a reality incommercial products. Compressing display streams is a practical way
to deliver a high-end product to users while gaining system
performance benefits including low bill-of-materials cost and low power
consumption without sacrificing picture quality. This paper outlines
important tradeoffs to integrators.
DES2 - 3
11:35

Study of Low Color Shift Design with a WRGB LCD
PanelL.-X. Chen, C.-T. Kang
Shenzhen China Star Optoelect. Tech., China

We simulate a 2-data & 1-gate lines low color shift design under WRGB
panels and propose some suggestions of how to improve view angle
performance. Both ways of gamma settings and look up tables are
discussed.

186

Thursday

December 4

DES2 - 4L: Invited Fixed-Rate Compression for Frame Buffer
11:55
Application
N. Jacobson, A. Teng, M. Dai, I. Ikizyan, S. Saeed,
M. Aleksic
Qualcomm, USA
As market demand for high resolution displays on mobile devices
increases, frame compression must be leveraged to compensate fordisplay interface transmission limits. Compression encoding is
performed on the SoC and decoding on the DDIC. We describe afixed-rate compression scheme designed for 2:1 and 3:1 compression
for frame-buffer application.
Also presented in Innovative Demonstration Session (see p. 213)----- Lunch ----Author Interviews and Demonstrations
18:30 – 19:30

13:30 - 16:30

Exhibition Hall B

Poster DESp1: Display Electronic Systems
DESp1 - 1

Design of Human Face Recognition Application on
Wide Viewing Angle Near-Eye See-Through Display
Z. Song, Z. Hu, L. Wang, Y. Tang
Southeast Univ., China

DESp1 - 2

A Study of Optical Design of Automotive Head-Up
Display
Y.-H. Chang, B.-R. Hsueh*, Y.-C. Fang
Nat. Kaohsiung First Univ. of S&T, Taiwan*Kao Yuan Univ. of S&T, Taiwan

We present a virtual-reﬂection head-up display (HUD) design forautomotive application. A special LCD is employed as light source. 3X
zoom optics play the role at various head up display application.
Distortion is averagely lower than 3%.

187

DES

An augmented reality system design based on embedded system ispresented, which can realize human recognition and personal
information display. Using face recognition algorithm, the system
obtains the corresponding human information like name, birthday, etc,from embedded database. A wide-viewing-angle see-through display
prototype is built to display personal information interface.

Thursday
DESp1 - 3

December 4
Amorphous Silicon Integrated Gate Driver Circuits
for High Resolution and Narrow Bezel Panel
Application
G.-T. Zheng, P.-T. Liu*, C.-H. Chang*, S.-H. Hung*,
W.-C. Wang**, Y.-H. Chang**, W.-C. Wang**, W.-L. Sung**Nat. Tsing Hua Univ., Taiwan*Nat. Chiao Tung Univ., Taiwan**Chunghwa Picture Tubes, Taiwan

This paper presents integrated amorphous silicon thin film transistor (aSi) gate driver circuit which is composed of two pairs of independent
clock signals (CLK1,CLK1B,CLK2, and CLK2B). By overlapping 50% of
CK1 and CK2 signal in time domain, high resolution display panel canbe achieved.
DESp1 - 4

Proposal of a Negative Level Shifter for a Negative
High Voltage Generator
M. Fukuhara, A. Ueda, M. Urakami, S. Hayakawa,
M. Yoshida
Tokai Univ., Japan

This paper proposes a new level shifter to generate a negative voltage
using LTPS-TFT. The proposed level shifter converts input clocks to an
output signal which has a level difference from ­2VDD to 0. The range ofapplication of the level shifter is examined in detail by Smart Spice.
DESp1 - 5

Withdrawn

DESp1 - 6

Introduction of a Liquid Crystal Driving Circuit
X. Xu, Z. Song, J. Chang, C. Gang, A. Jian, R. Lung,
X. Chen, B. Liao
Shenzhen China Star Optoelect. Tech., China

This paper introduces an array substrate driving circuit, including aplurality of GoA driving units used to drive a plurality of gate lines, anda plurality of Com driving units used to drive a plurality of common
electrode lines.
DESp1 - 7

Reducing Influence of Bias Stress on AMOLED
Displays by Driving in Linear Regime: a Sensitivity
Perspective
F. D. Roose*,**, K. Myny**, J. Genoe*,**, P. Heremans*,**,
W. Dehaene**KU Leuven, Belgium**imec, Belgium

We present analytical equations to calculate the sensitivity of AMOLED
displays to degradation of the electric characteristics of both thetransistor and OLED. These equations can be applied to any
technology using 2T1C pixels. They show that digital driving is lesssensitive to bias stress.

188

Thu./Fri.
DESp1 - 8

December 4/5
TFT VTH Detecting System for AMOLED Displays
W.-C. Chiu, C.-C. Tsou, P.-S. Chen, C.-L. Lin
Nat. Cheng Kung Univ., Taiwan

This paper presents a new method that compensates for the thresholdvoltage shift of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film
transistors (TFTs) and organic light-emitting diode (OLED) degradationby the external circuit with field-programmable gate array (FPGA), andstill retains the merits of the simplest structure of AMOLED driving
circuit.
DESp1 - 9

Withdrawn

DESp1 - 10

Super-Resolution Based on Edge Detection and
Sub-Regional Interpolation
H.-L. Hu, H. Li, L.-W. Chu, P.-S. Kuo, C. Li, C.-C. Lo
Shenzhen China Star Optoelect. Tech., China

A novel method of super-resolution based on edge detection and subregional interpolation was proposed. The method can enhance images
clarity and get smooth edge. This method only needs fewer pixel datain the input to obtain enhanced edge, so it can save more hardware
resource and get better image quality.

Friday, December 5
10:45 - 12:30

Room 201

DES3/VHF5: System Design and Evaluation in Augmented Reality
Special Topics of Interest on Augmented Reality and Virtual Reality
K. Morita, Nat. Traffic Safety & Environment Lab., Japan
K. Sakamoto, Panasonic, Japan

DES3/
VHF5 - 1:
10:45

Invited Simulation of Traffic Accident Scenarios with
an Augmented Reality Vehicle
N. Uchida, T. Tagawa, K. Sato
Japan Automobile Res. Inst., Japan

Observing drivers' behaviours by reproducing traffic accidents andconﬂict situations is important for developing advanced driver assistantsystems. For the purpose, an instrumented vehicle, named the JARIARV (Japan Automobile Research Institute - Augmented Reality
Vehicle), was developed to reproduce realistic traffic accident andconﬂict scenarios without endangering the driver.

189

DES

Chair:
Co-Chair:Friday
DES3/
VHF5 - 2:
11:10

December 5
Invited The Realistic 3D Image Display Using Direct
Light Scanning Method
H. Horimai, K. Hattori*, T. Umezaki
3Dragons, Japan*Chubu Univ., JapanThe realistic 3D image displays using Direct Light Scanning Method,so-called Holo-Table/Holo-Deck have become available. The features ofthese displays are not only large number views but also high density ofviews. Because of these features, users can see a 3D scene from any
directions with smooth motion parallax.
Also presented in Innovative Demonstration Session (see p. 215)
DES3/
VHF5 - 3
11:35

Fast Calculation Algorithm Based on Point-Based
Method for CGHs Using Polygon ModelY. Ogihara, Y. Sakamoto
Hokkaido Univ., Japan

Computer-generated holograms (CGHs), which are made by simulating
light propagation using a computer, are able to represent virtual
objects. However, an enormous amount of calculation time is needed tomake CGHs. We propose the fast calculation algorithm with pointbased method to make CGHs of the polygon model.
DES3/
VHF5 - 4
11:55

The Superiority of Widespread Monocular
Augmented Reality Presentation in a Manual Tracing
Task
A. Kitamura, H. Naito, T. Kimura*, K. Shinohara,
T. Sasaki**, H. Okumura**
Osaka Univ., Japan*Kansai Univ. of Welfare Scis., Japan**Toshiba, Japan

We conducted two experiments involving a tracing task withaugmented reality image presentation covering a visual field observedin monocular or binocular mode. Performance on the tracing task was
better in monocular mode relative to binocular mode, demonstrating
the superiority of monocular AR presentation for performance of amanual task.
DES3/
VHF5 - 5L
12:15

A Fundamental Study of an Augmented Reality
System for Road Maintenance Services
K. Makita, C.-T. Chang, R. Ichikari, T. Okuma, T. Kurata
AIST, Japan

In this paper, a fundamental study of an augmented reality system forsupporting road maintenance is described. For realizing efficient roadmaintenance, we implemented a prototype augmented reality systemusing a camera fixed in the environment and a hand held device tovisualize degenerate parts of the roads.
----- Lunch -----

190

Friday

December 5

13:30 - 14:30

Room 201

DES4: Display Driving Technologies
Chair:
Co-Chair:A. Sakaigawa, Japan Display, JapanT. Yamamoto, NHK, Japan

DES4 - 1
13:30

Low Power Liquid Crystal Driving Technique Basedon Capacitors for 1-Pixel Displays
H. Manabe, M. Date*, H. Takada*, H. Inamura
NTT DOCOMO, Japan*NTT, Japan

A technique that reduces the power to drive LCDs is proposed. It
harvests charges on the LCD and stores them in an additional
capacitor for reuse when the polarity changes. A simulation shows it
reduces the charge by up to 50% and a 30% reduction was achieved in
an experiment.
Also presented in Innovative Demonstration Session (see p. 213)
DES4 - 2
13:50

Ultra Low Power LCD TV Using RGBW System
C. G. Jung, Y. F. Chu, Z. D. Lai, X. X. Zhao, Y. L. Han,
K. M. Kim, L. L. Zhang, J. M. Jun
BOE Tech. Group, China

We developed Ultra Low Power ADS LCD Module which is using
RGBW pixel structure. We could increase panel transmittance byadding white pixel, could keep the image quality by using newly
developed white color generation algorithm and driving method.
DES4 - 3
14:10

P.-C. Lai, M.-H. Cheng, P.-C. Lai, N. Sugiura*, C.-H. Lin*,
C.-L. Lin
Nat. Cheng Kung Univ., Taiwan*AU Optronics, Taiwan

A new pixel circuit for BPLCDs is presented to deal with large
capacitance of BPLCs, a charge-sharing-reset method is developed to
improve the insufficient charging capability of the conventional 1T2C
pixel circuit. Simulations indicate the average voltage error rate under
120-Hz frame rate through the proposed circuit is about 3%.
----- Break -----

191

DES

Pixel Circuit with Fast Charging Capability Using
Charge-Sharing Method for Blue-Phase Liquid
Crystal Displays

Friday

December 5

15:15 - 16:15

Room 201

DES5: Display Interface and Driving Technologies
Chair:
Co-Chair:

H. Okumura, Toshiba, JapanT. Yamamoto, NHK, Japan

DES5 - 1
15:15

An Automatic DC Self-Adjusting Encoder of 5Gbps/
Lane Intra-Panel Interface for High Speed
Transmission
L.-W. Chang, Y.-C. Wu, Y.-C. Kang, W.-T. Chen, C.-P. Ho,
C.-H. Yang, H.-D. Lin, H.-C. Wang
AU Optronics, Taiwan

An automatic DC self-adjusting encoder is presented based on theiSP+ [2]. The proposed encoder can effectively control the run lengthand provide the perfect DC balance data without LUT. Moreover, thisencoder is highly ﬂexible to adjust the overhead for attaining either
better high speed performance or bandwidth.
DES5 - 2
15:35

A Novel Method to Reduce the Loss of the Data inHigh Resolution LCD
S.-Y. Wu, Y.-L. Ho, Y.-C. Chen, H.-H. Chen, H.-M. Su,
W.-Z. Zeng
Chunghwa Picture Tubes, Taiwan

In this paper, first we define the parameters about trace width or spaceetc. in layout design to decrease the loss of signal and having better
signal integrity. Second, we follow the rule that we had defined todesign the FPCA and simulating the trace impedance to make sure thedifferential impedance can near 100 ohm. At the final, we simulate theeye-diagram of signal to confirm the signal integrity is satisfied the MIPI
standard. And the result shows the performance being optimized
obviously after follow the layout rule that we defined.
DES5 - 3
15:55

A P-Type LTPS TFT Compensation Pixel Circuit for
Self-Emission Displays with GOA
Y.-T. Lin, H.-Y. Hsieh, C.-H. Chen, Y.-C. Lai, M.-Y. Lu,
C.-C. Kuo, C.-T. Chuang, Y.-S. Huang, C.-N. Yeh,
N. Sugiura
AU Optronics, Taiwan

This study reports a novel driving architecture that uses only P-type
low-temperature poly silicon (poly-Si) thin-film transistors (LTPS-TFTs)
to simplify the fabrication process of 4.3-in. qHD (960 540) selfemission displays. This reliable shift register circuit will contribute to thelower cost and slim bezel ﬂat panel display with high picture quality.
Author Interviews and Demonstrations
16:45 – 17:45
Supporting Organizations:Shin-etsu Section, IEEE
Special Interest Group on Mixed Reality, The Virtual Reality Society of Japan
Technical Committee on Electronic, Information Displays, Electronics Society IEICE
Technical Group on Information Display, ITE
Technical Group on Information Sensing Technologies, ITE
Technical Committee on Image Engineering, Systems Society, IEICE
192

Wednesday

December 3

Workshop on Flexible Electronics
Wednesday, December 3
14:00 - 14:05

Snow Hall A

Opening
Opening Remarks
14:00
T. Sekitani, Osaka Univ., Japan

14:05 - 15:40

Snow Hall A

FLX1: Flexible Backplane
Chair:
Co-Chair:T. Kamata, AIST, Japan
T. Sekitani, Osaka Univ., Japan

FLX1 - 1:
14:05

Invited Oxide Thin Film Transistors for Flexible
Display
Y. Uraoka, M. Fujii, M. Horita, Y. Ishikawa
Nara Inst. of S&T, Japan

Oxide semiconductor TFTs were investigated for ﬂexible device.
Solution-processed oxide thin film transistors showed a high field effectmobility of 19.5 cm2/V·s at a low fabrication temperature of 300 C by anaqueous solution. Fluorinated SiN gate insulator greatly improved thereliability of oxide TFT under gate bias stress.
FLX1 - 2:
14:30

Invited Improvement in the Field-Effect Mobility ofMetal Oxide TFTs by Advanced Stack Channel
Structure and Defect Control for the NextGeneration High-End Active-Matrix Displays

FLX

J. K. Jeong, H. Ji, A. Y. Hwang, P. S. Yun*, J. U. Bae*,
K.-S. Park*
Inha Univ., Korea*LG Display, Korea
In this paper, two kinds of approaches including the double channel
structure and metal reaction method are introduced to improve
substantially the field effect mobility of metal oxide TFTs. By
optimization, the high mobility exceeding 60.0 cm2/Vs can beachievable in the resulting metal oxide TFTs.

193

Wednesday
FLX1 - 3:
FLX1 - 4
15:20

December 3

Withdrawn
Flexibility Improvement of LTPS-TFT for Foldable
AMOLED
J.-Y. Yan, W.-W. Tsai, B.-Y. Su, C.-W. Su, H.-C. Yao,
T.-J. Wang, W.-C. Kao, Y.-C. Lin, C.-Y. Hung, W.-H. Chen,
M.-J. Yang, C.-Y. Chiang, K.-L. Chuang, W.-T. Wang,
C.-C. Lee
ITRI, Taiwan

High reliability & ﬂexibility p-type LTPS-TFT by FlexUP technology wasachieved. The mobility of ﬂexible P-type LTPS is over 70 cm2/Vs. The
process temperature is limited at 400oC. After mechanical de-bonding,the mobility does not change. This result indicated the p-type LTPS
fabricated on FlexUP is feasible for foldable AMOLED application.
----- Break ----15:45 - 16:40

Snow Hall A

FLX2: Flexible Displays and Devices
Chair:
Co-Chair:K. Uemura, Nippon Steel & Sumitomo Metal, Japan
H. Maeda, DNP, Japan

FLX2 - 1
15:45

Bezel-Less PMOLED Modules with Flexible
Substrates for Scalable Display System
H. Iijima, M. Izuchi, H. Makino, T. Wakabayashi, K. Sasai,
Y. Okumoto, A. Miyamoto, K. Morita
Panasonic, Japan

We have successfully demonstrated a bezel-less scalable display
system by arraying bezel-less PMOLED modules. Each has a lifetimeof 40,000 hours life, 250 μm encapsulation width, 1 mm pixel pitch anda ﬂexible substrate. They were realized by SiN/SiN edge encapsulationand the adoption of a slide bending structure.
FLX2 - 2
16:05

A Flexible Display Panel, a Flexible Battery, and a
Flexible Printed Circuit for Wearable Display
T. Miwa, R. Tajima, Y. Goto, Y. Saito, T. Oguni, H. Miyake,
A. Hitotsuyanagi, J. Goto, H. Katagiri, S. Okano,
M. Kaneyasu, M. Hiroki, M. Takahashi, S. Yamazaki
Semiconductor Energy Lab., JapanTo fabricate a genuinely ﬂexible and wearable display with a ﬂexible
battery together with a ﬂexible OLED panel and a ﬂexible printed
circuit, a ﬂexible lithium ion battery has been developed, and a
prototype of a wrist-wearable display has been fabricated.

194

Wed./Thu.
FLX2 - 3L
16:25

December 3/4
Flexible AMOLED on Transparent Polyimide
Substrate
C.-C. Kuo, J.-Y. Chiou, E. Syu, S.-F. Liu, C.-H. Chiou,
M.-C. Chen, C.-T. Li
Chunghwa Picture Tubes, Taiwan

We succeeded in demonstrating the ﬂexible AMOLED combined withtransparent PI substrate, and the device can achieve the curvatureradius of 3.5 cm, and the module thickness of AMOLED display is
about only 0.2 mm which can realize rollable and portable widget
deviceAuthor Interviews and Demonstrations
17:15 – 18:15

Thursday, December 4
9:00 - 12:00

Exhibition Hall B

Poster FLXp1: Flexible Electronics
FLXp1 - 1

A 4.6-in. Flexible AMOLED Encapsulated by
Sputtered Thin Film and Laminated High Barrier
Film
L. Lin, L. Deng, P. Dang, C. Zhao, X. Gao, X. Huang
Kunshan New Flat Panel Display Tech. Ctr., China

AMOLED devices encapsulated with a method combining alternative
Al2O3/polyacrylate multilayer thin-film encapsulation (TFE) and highbarrier film lamination have been demonstrated. With an additional highbarrier film layer, the organic/inorganic stacking TFE layer has beensuccessfully simplified from 4.5 dyad to 2.5 dyad, and the yield ofencapsulation has been greatly improved.
FLXp1 - 2

FLX

Ultra-High Gas Barrier Film Deposition Using a
Novel Precursor, TG-4E, by PECVD for OLED
Devices
H. Chiba, M. Shimizu, D. Hara, K. Tokuhisa
TOSOH, Japan

We have developed a novel precursor, TG-4E, for ultra-high gas barrier
film deposition by PECVD. Colorless, transparent, and ﬂexible gas
barrier films were obtained, and furthermore, the water vapor
transmission rate (WVTR) of the three-layer coated film achieved 5.7
10-5 g/m2/day under 40 C, 90% RH condition.

195

Thursday

December 4

FLXp1 - 3

Flexible Dye Sensitized Solar Cells for Device Power
Applications
J. Silver, T. G. Ireland, G. R. Fern, M. Spratt*
Brunel Univ., UK*G24 Power, UK

Described herein is how a dye sensitised solar cell is constructed;
these devices can be manufactured roll to roll producing highly ﬂexible
modules. These cells harvest incident light converting it into electricalenergy in both low and high light environments. These modules can beeasily integrated into modern electrical devices.
FLXp1 - 4

Withdrawn

FLXp1 - 5

The Study on Electrical Characteristics Variation of
Flexible Pentacene Based Thin Film Transistors on
PET Substrate with/without Surface Treatments
J. J. Shivan, J. C. Ming, L. W. Lun, W. Y. Wu
Nat. Changhua Univ. of Education, Taiwan

We report the characteristics variation of ﬂexible pentacene based thinfilm transistors (OTFTs) which were operated at a very low voltage
under 3 Volt through utilizing a high dielectric gate insulator on PET
substrate. The results denote good device performance with mobility
0.8 cm2/Vs and sub-threshold slope 0.23 V/dec.
FLXp1 - 6

Structure Design of IGZO TFTs with Stress Analysis
for Flexible Applications Using Finite Element
MethodM. H. Lee, S.-M. Hsu*, C. Liu, J.-D. Shen
Nat. Taiwan Normal Univ., Taiwan*Nat. Taiwan Univ., Taiwan

The stress analysis in ﬂexible IGZO TFTs structures with ITO electrodeand rolling curvatures using finite element method was proposed. The
stress at mid-channel with four structures was compared and obtained
the top-gate structure with small stress variation for mechanical rolling.
The feasibility of oxide TFT was optimized the structures.
FLXp1 - 7

Flexible Polymer Dispersed LC Materials for
Holographic Recording
K.-T. Kuo, W.-C. Su
Nat. Changhua Univ. of Education, Taiwan

This paper presented the ﬂexible holograms in polymer dispersed liquid
crystal films. We use the polymethylmethacrylate instead of glass
substrate to fabricate the liquid crystal films which can be bended. And
we observe the image change before and after bending the polymer
dispersed liquid crystal films.

196

Thursday
FLXp1 - 8

December 4
Study of Polymer Stabilized Blue Phase LC on
Flexible Substrate
N. Endo, T. Matsumoto, H. Kikuchi*, M. Kimura
Nagaoka Univ. of Tech., Japan*Kyushu Univ., Japan

Polymer stabilized blue phase (PSBP) has a potential to realize a
ﬂexible LCD. In this study, ﬂexible PSBP LCD fabricated on a plastic
and/or glass substrate are demonstrated and whose electro-opticalproperties are evaluated.
FLXp1 - 9Fabrication of Conductive Electrode on Flexible
Substrate Using Ag Nanoparticle Ink by Transfer
Printing Method
J.-C. Choi, J.-S. Park, G. T. Park, J.-H. Kim, M.-K. Park,
I. Mahmud, J.-H. Bae, H.-R. Kim
Kyungpook Nat. Univ., Korea

We fabricated highly conductive electrode on ﬂexible substrate using
metal nanoparticle ink by thermal sintering and transfer printing
method. To enhance transfer printing, etching process was introduced.
Furthermore, an adhesion layer was used to improve bending stability.
FLXp1 - 10

Pretilt Angle and Surface Anchoring Energy of LCD
Fabricated by Slit Coater
T. Yamamoto, M. Kimura
Nagaoka Univ. of Tech., Japan

Pretilt angle and polar anchoring energy fabricated by slit coater
method will be demonstrated under the several fabrication conditions.
LC layer coated by slit coater will be made with pattern alignment by
expose UV light through a simple photo-mask. Furthermore, thealignment control with polarized UV is studied.
FLXp1 - 11

A Non-Contact Resistance Measurement of Flexible
Substrates for Repeating Bending Test by Using a
Terahertz Time Domain Spectroscopy

FLX

B.-J. Wen, T.-A. Liu, S.-W. Hsu, T.-Y. Chung
ITRI, Taiwan
The study utilizes a terahertz time domain spectroscopy to measureelectrical properties of ﬂexible polyethylene terephthalate/ ITO
substrates up to 20,000 bending times. According to the measurement
results, the values show a reasonable agreement with contact-mode
four-point probe measurements.

197

Thursday
FLXp1 - 12

December 4
The Enhanced Thin Glass with an Ultra-High
Bending Strength by a Laser Peeling Technology
C.-H. Li, C.-J. Huang, K.-T. Chen, M.-C. Lin
ITRI, Taiwan

The laser physical enhancement technology can fully remove cracks ofultra-thin glass edges according to the temperature gradient provided
by laser energy can induce a tensile stress larger than the tensile
strength of ultra-thin glass. The laser peeling technology can be applied
to the ﬂexible touched panel and display.
FLXp1 - 13L Fabrication of Organic-Inorganic Hybrid MoistureBarrier Film for OLEDs
S. H. Lim, S.-W. Seo, J. Shin, S. M. Cho
Sungkyunkwan Univ., Korea
We fabricated moisture-barrier films using ALD and plasma enhanced
CVD method for OELD encapsulation. The ZrO2 inorganic layer was
deposited on PEN substrate using TEMAZ (tetrakis(ethylmethylamino)
zirconium) precursor. The organic layer was grown with n-hexane
precursor. The moisture-barrier property and ﬂexibility were measured
by Ca test and bending test.
FLXp1 - 14L Fabrication and Evaluation of IPS-mode
Flexible LCDs Using Uniaxial Polycarbonate
Substrates
A. Sato, T. Ishinabe, H. Fujikake
Tohoku Univ., Japan
Optical compensation of ﬂexible IPS-mode LCDs using uniaxial
polycarbonate substrates was achieved for wide viewing angle. We
clarified that the slow axis of plastic substrate must be parallel to thealignment direction of IPS-mode LC. We suppressed light leakage inthe dark state by fabricated device using uniaxial polycarbonate
substrates.
FLXp1 - 15L Synthesis and Application of Silver Nanowire forTransparent Electrodes Applicated Touch Screen
Panel
M. Y. Lee, W. S. Cho, G. S. Kwak, S. Y. Park
Kyungpook Nat. Univ., Korea
Silver nanowires (AgNWs) were synthesized using silver nitrate andethylene glycol. At this work, using polyvinylpyrrolidone (PVP) as
template and sodium dodecylsulfate (SDS) as surfactant at once, itwere observed reaction rates and forms of AgNWs. Synthesized
AgNWs was spray-coating on polyethylene terephthalate (PET) films
and they were evaluated properties of electrical and optical.
----- Lunch -----

198

Thursday

December 4

13:30 - 15:00

Snow Hall B

FLX3: Advanced Printing Technologies
Special Topics of Interest on Printed Electronics
Chair:
Co-Chair:M. Ito, Toppan Printing, Japan
H. Hirata, Toray Eng., Japan

FLX3 - 1:
13:30

Invited Novel Roll-to-Roll Screen Printing Machine
for Flexible Devices
D. Kobayashi, N. Naoi*, T. Suzuki*, T. Sasaki*,T. Furukawa**
Tokai Shoji, Japan*Tokai Seiki, Japan**Yamagata Univ., Japan

Novel roll-to-roll screen printing machine was developed for printing on
ﬂexible substrates. By this machine, technical problems of theconventional screen printing machines have been solved, such as the
problems of “distortion of the image” and “stability in the condition of
peeling-off of the printing stencil mask from the substrate.”
FLX3 - 2:
13:55

Invited Technologies for Fully Integrated Printed
Displays
N. Fruehauf, D. Benzel, M. Strecker
Univ. of Stuttgart, Germany

Ultra low cost applications such as packaging demand the use of low
cost technologies, which create previously not addressed challenges,
even if their lower optical performance is acceptable These include low
voltage printed organic thin film transistors, low cost encapsulation
processes and redundant circuit design for printed electronics based
systems.
FLX3 - 3:
14:20

Invited Flexible Transparent Conductive Films Basedon Metal Mesh Technology
Z. CuiA new technique for making ﬂexible transparent conductive substrates
based on metal mesh structures is presented. The metal meshstructures are made by embedding silver nanoparticles inks into
imprinted grooves on a ﬂexible transparent substrate. The newtechnology has been successfully implemented in high volume
manufacturing of touch panel sensors for displays.

199

FLX

Chinese Ac. of Sci., China

Thursday
FLX3 - 4L
14:45

December 4
Patterned ITO Film by Roll-to-Roll Process on
Ultra-Thin Glass
T. Furukawa, K. Mitsugi*, S. Akiyama*, H. Itoh**,
D. Kobayashi***, T. Suzuki****, H. Kuroiwa*****,
M. Sakakibara******, K. Tanaka*******, N. Kawamura,
M. Koden
Yamagata Univ, Japan*Nippon Elec. Glass, Japan**Teijin, Japan***Tokai Syoji, Japan****Tokai Seiki, Japan*****FEBACS, Japan******DNP, Japan*******Kobe Steel, Japan

We have recently succeeded in patterning ITO film for OLED lighting
on 50-μm ultra-thin glass by ʻRoll-to-Rollʼ process and confirming
luminescence of OLED on the substrate. ʻRoll-to-Rollʼ wet cleaning
equipment, ʻRoll-to-Rollʼ deposition equipment, and the new type ofʻRoll-to-Rollʼ screen printing equipment were used for this study.
----- Break ----15:15 - 16:45

Snow Hall B

FLX4: Printed TFT Technologies
Special Topics of Interest on Printed Electronics
Chair:
Co-Chair:Y. Uraoka, Nara Inst. of S&T, JapanT. Furukawa, Yamagata Univ., Japan

FLX4 - 1:
15:15

Invited Fully Printed Flexible TFT Array for Electronic
Paper
M. Ito, H. Chujo, K. Murata, M. Nishizawa, N. Ikeda,
K. Hatta, M. Yokoo, R. Matsubara, O. Kina, S. Akao,
M. Takei, M. Kumagai, M. Ishizaki, K. Morosawa,
M. Matsumura
Toppan Printing, Japan

Flexible organic TFT arrays are fabricated by fully printed method forelectronic paper. Taking advantage of ﬂexible feature, electronic paperwith extraordinary laterally elongated shape, whose size is 15 mm by
900 mm is demonstrated. This novel electronic paper can be applied torail-type ESL (Electronic Shelf Label).
FLX4 - 2:
15:40

Invited Fully-Printed Organic TFTs and Circuits on
Ultra-Flexible Substrates
K. Fukuda, Y. Takeda, S. Tokito
Yamagata Univ., Japan

In this paper, we report on fully-printed organic thin-film transistor(TFT) devices fabricated on ultra-ﬂexible films in large area with goodelectrical performances. The resulting devices were extremely light andexhibited excellent mechanical stability. The devices remained
operational even under 50% compressive strain, without significant
changes in their performances.
200

Thursday
FLX4 - 3
16:05

December 4
Flexible Electronics on Backmolded Plastic Foils
P. Gaucci, N. Fruehauf, A. Ilchmann*, B. Polzinger*,W. Eberhardt*, H. Kück*
Univ. of Stuttgart, Germany*HSG-IMAT, Germany

Inkjet-printed organic thin film transistors and unipolar inverters withdifferent combination of channel length and channel width have been
fabricated on plastic foil, which was afterwards implemented for the firsttime on the 3D curved surface of an injection molded plastic object byback-injection molding.
FLX4 - 4L: Invited Automated Continuously-Manufacturing Line
16:25
of All-Printed Organic TFT Array Flexible Film
S. Nishi*,**, T. Kamata*,****JAPERA, Japan**Konica Minolta, Japan***AIST, Japan

We have constructed a sheet-to-sheet (S2S) manufacturing line inorder to prove the possibility and reality of production technologies andintegrated processes of all-printed electronics devices. We acquired anorganic TFT array on a ﬂexible film of G1 size in a reasonable highyield, whose electrical properties were highly uniform.
Author Interviews and Demonstrations
18:30 – 19:30

FLX

Evening Get-Together
with Wine
Tuesday, December 2, 2014
18:00 – 20:00
Observation Deck (31F),
Hotel Nikko Niigata(Sponsored by Merck Ltd., Japan)
See page 12 for details
201

Friday

December 5
Friday, December 5

10:45 - 11:50

Snow Hall A

FLX5: Flexible Substrates
Chair:
Co-Chair:T. Shiro, Teijin, JapanT. Eguchi, Sumitomo Bakelite, Japan

FLX5 - 1:
10:45

Invited Flexible Paper Electronics Based on
Cellulose Nanofiber Paper
H. Koga, M. Nogi, K. Suganuma
Osaka Univ., Japan

Transparent conductive networks embedded in the surface of cellulose
nanofiber paper are prepared by simple filtration coating. As-preparedtransparent conductive paper showed sheet resistance of 12 Ωsq.–1
with specular transmittance of 88% and was folded with negligible
changes in electrical conductivity, opening new doors for future foldable
electronics.
FLX5 - 2
11:10

Resent Approach to High Throughput Barrier
Coating on Plastic Substrate
T. Okimoto, Y. Kurokawa, T. Segawa, H. Tamagaki
Kobe Steel, Japan

By using a new magnet layout for generating plasma, high barrier
coating of WVTR below 5x10-4 g/m2/day was obtained at high dynamic
deposition rate of 250 nm-m/min. And excellent coating uniformity wasachieved on 1.3 m width substrate by using production scaleequipment.
FLX5 - 3
11:30

Development of Transparent Cellulose Nano Fiber
Film for Flexible Displays
G. Banzashi, H. Fushimi, S. Iwai, M. Tsunoda, E. Mikami
Oji Holdings, Japan

Cellulose nano fiber (CNF) is nano size cellulose fiber which is
produced by fibrillation of pulp. We have developed a continuoustransparent CNF film. The CNF films exhibit high transmittance (>90%),high Youngʼs modulus (>11 GPa), low coefficient of thermal expansion(<10 ppm/ C), tolerability to organic solvent and ﬂexibility.
----- Lunch -----SID Display Week 2015
May 31 – June 5, 2015
San Jose Convention Center
San Jose, California, U.S.A.
202

Friday

December 5

13:30 - 14:50

Snow Hall A

FLX6/FMC6: Flexible Materials and Devices
Chair:
Co-Chair:Y. Mishima, FUJIFILM, Japan
T. Tomono, Toppan Printing, Japan

FLX6/
FMC6 - 1:
13:30

Invited Flexible Substrates and Alternative
Electrodes of ITO for OLED Lighting
M. Koden, H. Kobayashi, T. Moriya, N. Kawamura,
T. Furukawa, H. Nakada
Yamagata Univ., Japan“Flexible substrates with alternative electrode of ITO for organic
electronics” is being developed in the “Yamagata University Organic
Thin Film Device Consortium”, in which 21 companies participate. The
current status and some of the developmental results on ﬂexible
substrates and alternative electrodes of ITO for OLED lighting arereviewed.
Also presented in Innovative Demonstration Session (see p. 213)
FLX6/
FMC6 - 2
13:55

An Analysis Method of Shock Test for Flexible
Displays by Using an Image Luminance
Measurement Device
J.-M. Hsu, S.-W. Hsu, B.-J. Wen, T.-Y. Chung
ITRI, Taiwan

The objective of this study is to put forward a new analysis method ofshock test for ﬂexible displays. The study utilized an image luminancemeasurement device to inspect optical properties of ﬂexible organic
light emitting diodes before and after shock test.
FLX6/
FMC6 - 3
14:15

Plastic Substrate Technology for Flexible LCD
Z.-H. Chen, T.-H. Huang, J.-K. Lu, N. Sugiura
AU Optronics, Taiwan

IDW ’15The 22nd International Display Workshops
December 9 – 11, 2015
Otsu Prince HotelOtsu, Japan
http://www.idw.or.jp
203

FLX

Materials and handling method of plastic substrate are the key factor
for ﬂexible liquid crystal display (LCD). Different ﬂexible substratematerials and fabrication process will be discussed in this article.
Furthermore, 3.5-in. ﬂexible LCD was demonstrated using optical clear
fiber-reinforced-plastic substrate and film lamination followed via
mechanical peeling process.

Friday

December 5

FLX6/
FMC6 - 4L
14:35

Roll-to-Roll Planarized Stainless Steel Foil for OLED
Substrate
N. Yamada, H. Kobayashi*, S. Yamaguchi,
J. Nakatsuka**, K. Nose, K. Uemura, M. Koden*,
H. Nakada*
Nippon Steel & Sumitomo Metal, Japan*Yamagata Univ., Japan**Nippon Steel & Sumikin Materials, Japan

Roll samples of planarized stainless steel foil were produced bycontinuously forming inorganic-organic hybrid layer. The planarization
layer endowed both surface ﬂatness and electric insulation to thestainless steel foil, resulting in successful fabrication of OLED
prototypes on the roll-to-roll planarized stainless steel foil.
Author Interviews and Demonstrations
16:45 – 17:45
Supporting Organizations:Technical Committee on Electronic Information Displays, Electronics
Society, IEICE
Technical Group on Information Display, ITE

IDW Best Paper AwardIDW Outstanding
Poster Paper Award
These awards will go to the most outstanding papers
selected from those presented at IDW ’14.
The 2014 award winners will be announced on the
IDW website: http://www.idw.or.jp/award.html

EXHIBITION
12:40 – 18:00 Wednesday, Dec. 3, 2014
10:00 – 18:00 Thursday, Dec. 4, 2014
10:00 – 14:00 Friday, Dec. 5, 2014
Exhibition Hall B
TOKI MESSE Niigata Convention CenterFree admission with your registration name tag
204

Wednesday

December 3

Workshop on Touch Panels andInput Technologies
Wednesday, December 3
14:00 - 14:05

Room 302 B

INP

Opening
Opening Remarks
14:00
N. Hashimoto, Citizen Holdings, Japan
14:05 - 15:30

Room 302 B

INP1: Touch Panel (1)Chair:
Co-Chair:

H. S. Koo, Minghsin Univ. of S&T, Taiwan
K. Nakatani, Touchpanel Labs., Japan

INP1 - 1:
14:05

Invited Technological Development of Touch Panel
Industry in Taiwan
H. S. Koo, M. Chen
Minghsin Univ. of S&T, Taiwan

With technological development of computing, commercial,communication, and internet, various types of human-machineinterface (HMI) and interactive devices are subsequently being
designed, developed and applied to the desktop-, laptop-, portable,
ﬂexible and wearable ICT-based commodities. The touch-panel-based
interactive interface input technology is one of the human-machineinterface devices.
INP1 - 2
14:30

New Al-Based Metal Mesh Electrode for a Touch
Screen Panel
M. Ochi, Y. Shida, H. Goto, T. Kugimiya, H. Okuno*,
M. Kanamaru*
Kobe Steel, Japan*Kobelco Res. Inst., Japan

We have developed an Al-based triple-layered metal mesh electrodeincluding an Al-N based layer for optical adjustment. The electrodeexhibits excellent reﬂective properties along with wet etching property
that facilitates its micro-fabrication. The metal mesh electrode is usefulfor a touch-sensitive panel in ultra-high-resolution displays of the next
generation.

205

Wednesday
INP1 - 3
14:50

December 3
Low Reflectance Metal Layers for New Touch Panel
SolutionsJ. L. Grillmayer, H. C. Ko, M. Bender*, K. Witting*Appl. Materials, Taiwan*Appl. Materials, Germany

To optimizing the OGS manufacturing, targeting new metal mesh andon-cell TP solutions new deposition technologies were developed. Low
surface reﬂectance and resistivity were demonstrated for different black
metal layers. Applied Materials is continues optimizing their PVD
production equipment allowing cost efficient, high volume
manufacturing of these TP devices.
INP1 - 4
15:10

A Novel Metal Mesh Single Layer Touch Sensor
Design to Achieve Preeminent Touch and Visual
Performance
R.-H. Fu, J. Qiu, J.-K. Zhang, C.-L. Ye, Y.-L. Lin,
C.-Y. Lee, C.-C. Luo, A. Lien*
Shenzhen China Star Optoelect. Tech., China*TCL Corporate Res., China

Using single layer metal mesh to design a multi-touch projected
capacitive touch (PCT) panel is proposed in this paper. Through fully
utilization of metal owing low impedance, the dead zone of PCT can begreatly reduced. With the proposed design, there is a great
improvement in touch linearity and visual performance.
----- Break ----15:45 - 17:15

Room 302 B

INP2: Touch Panel (2) and Haptics
Chair:
Co-Chair:T. Hoshi, Nagoya Inst. of Tech., Japan
H. Haga, NLT Techs., Japan

INP2 - 1:
15:45

Invited Electrostatic Tactile Display for Stimulus
Localization
H. Haga, K. Yoshinaga, J. Yanase, D. Sugimoto,K. Takatori, H. AsadaNLT Techs., Japan

We present an electrostatic tactile display for stimulus localization. The
240-Hz electrostatic force was generated by the beat phenomenon in aregion where excited X electrodes cross excited Y electrodes, which
presents localized tactile sensation out of the entire surface. A 10.4-in.
visual-tactile integrated display was successfully demonstrated.

206

Wednesday
INP2 - 2:
16:10

December 3

Invited Noncontact Tactile Display Using Airborne
UltrasoundT. Hoshi
Nagoya Inst. of Tech., Japan

INP2 - 3
16:35

Touchless Architecture for Small and Medium Size
Panel Application
D.-C. Yu, J.-S. Liao, H.-H. Chen, H.-M. Su, W.-T. Tseng
Chunghwa Picture Tubes, Taiwan

In recent year, the touchless application is more and more popular.
Therefore, we will discuss and analyze the different type of touchlesstechnologies applied to smart handheld devices and we will conclude
the touchless technology which was more fit to smart handheld
devices.
INP2 - 4
16:55

A Novel Embedded Touch Display with Integrated
Chip Solution
C.-Y. Hsu, Y.-C. Li, C.-C. Chang, W.-J. Yang, H.-H. Chen,
H.-M. Su, W.-T. Tseng
Chunghwa Picture Tubes, Taiwan

Chunghwa picture tubes, Ltd. has been successive to develop 5.0-in.
HD (720 1280) FFS-mode a-Si display with a newly developed Hybrid
Type capacitive touch In-cell which was driven by the TDDI (Touch
Display Driver Integrate) IC. We proposed Hybrid structure of touch incell that solve noise problem and get high SNR.
Author Interviews and Demonstrations
17:15 – 18:15

Innovative Demonstration Session
by Oral and Poster Presenters

Live demonstrations of emerging information
display technologies
16:45 – 19:30 Thursday, December 4, 2014
12:30 – 15:15 Friday, December 5, 2014
Exhibition Hall B
See Page 212 - 215 for details
207

INP

A tactile display that provides tactile stimulation from a distance isstudied. Hundreds of ultrasonic transducers cooperate to make a focal
point of ultrasound based on phased-array focusing technique. It
provides tactile feedback to ﬂoating images and natural user interfaces.
It also tactually delivers characters, symbols, drawings, etc. to users.

Thursday

December 4
Thursday, December 4

9:00 - 12:00

Exhibition Hall B

Poster INPp1: Touch Panel
INPp1 - 1

Withdrawn

INPp1 - 2

Invisible Patterned Method for Silver Nano-Wires
Conductive Film
Y.-P. Chang, M.-H. Yang, W.-T. Chen, C.-Y. Chiu,
Y.-Z. Lee
ITRI, Taiwan

We provided a novel invisible patterning method for silver nanowires
conductive ﬁlm. A photoresist pattern as the protector kept away theeffect of patterned treatments, such as heat treatment and plasma
treatment. The conductive nano-structure mesh ﬁlm includes a ﬁrst
region and a second region adjacent to the ﬁrst region.
INPp1 - 3

Reduced Non-Uniformity Moiré in Metal Mesh Touch
Display Using View Angle Compensation
C.-Y. Chen, J.-L. Chen, S.-Y. Huang
General Interface Solution, Taiwan

Metal mesh technology offers another alternative to ITO as low
resistance. But metal mesh may appear moiré due to interference with
TFT-LCD. We describe simulation result of moiré in the right and left
side of TFT-LCD. Than we compensate this phenomenon via special
metal mesh design.
INPp1 - 4

Capacitive Touch Sensing Circuit on Flexible
Substrate Using Back-Channel-Etch a-IGZO TFTs
Y. Chen, D. Geng, J. Jang
Kyung Hee Univ., Korea

We designed and fabricated a novel capacitive touch sensing circuit on
ﬂexible substrate with back channel etched a-IGZO TFTs. The circuit
embedded with output buffer has large output voltage swing and load
drivability, which make it suitable for ﬂexible large-area touch sensing
application.

SID Display Week 2015
May 31 – June 5, 2015
San Jose Convention Center
San Jose, California, U.S.A.
208

Thursday
INPp1 - 5L

December 4
Touchscreen Manufacturing Technology Using
Inkjet Printing
Y. Fukushima, K. Asai, A. Kiura
Toray Eng., Japan----- Lunch ----13:30 - 14:45

Room 301

INP3: AR Interactive Systems
Special Topics of Interest on Augmented Reality and Virtual Reality
Chair:
Co-Chair:N. Hashimoto, Citizen Holdings, JapanK. Berkner, Ricoh Innovations, USA

INP3 - 1:
13:30

Invited System Design Considerations for PersonalLight Field Displays for the Mobile Information
Gateway
W. Wu, N. Balram, I. Tošić, K. Berkner
Ricoh Innovations, USA

Existing mobile devices are fundamentally limited with their small
screen sizes. A promising direction in the quest for next generation
human interfaces is the development of personal near-eye light field
displays. We present a review of existing techniques in this field anddiscuss their system design considerations and tradeoffs.
INP3 - 2:
13:55

Invited Further Analysis of the R-V Dynamics
Illusion on Sense of Weight
S. Hashiguchi, Y. Kataoka, F. Shibata, A. Kimura
Ritsumeikan Univ., Japan

In mixed reality space, we can change appearances of a real object (R)and virtual object (V). In this study, we visually change movements of
the real and virtual objects and observe the inﬂuences of the virtual
objectʼs dynamics on the sense of the weight of the real object.

IDW ’15The 22nd International Display Workshops
December 9 – 11, 2015
Otsu Prince HotelOtsu, Japan
http://www.idw.or.jp
209

INP

Direct printing technology using inkjet technique for forming insulation
layer and jumper lines, which is applicable to touchscreens with X andY electrode on one layer, has been developed. The technology
outperforms photolithography in efficiency of material usage,
unnecessity of expensive exposure and developer, and reduction of
manufacturing cost.

Thursday
INP3 - 3L:
14:20

December 4
Invited Interactive Technologies with Applied
Perception
J. Watanabe, S. Hirabara*, T. Maeda*, H. Ando*
NTT, Japan*Osaka Univ., Japan

When we develop display technologies, the features of human action
and perception are potential resources of information presentation. We
introduce information displays that work on the basis of thecharacteristics of the human perceptual system.
Also presented in Innovative Demonstration Session (see p. 215)----- Break ----15:15 - 16:45

Room 302 A

INP4: Sensor and Applications
Chair:
Co-Chair:

M. Kimura, Ryukoku Univ., Japan
J. Ohta, NAIST, Japan

INP4 - 1:
15:15

Invited Sensor Applications Using Thin-Film Devices
Derived from Display Technologies - Flatpanel
Imager, Artificial Retina, Temperature Sensor,
Magnetic-Field Sensor, etc. M. Kimura, T. Matsuda, S. Noguchi, T. Sakamoto*,
T. Ozawa**, K. Aoki**, C.-C. Kuo**
Ryukoku Univ., Japan*AIST, Japan**AU Optronics, Japan

We have been proceeding research and development of sensor
applications using thin-film devices derived from display technologies.
In this presentation, we will propose some examples of these sensor
applications, such as ﬂatpanel imager, artificial retina, temperature
sensor, magnetic-field sensor. Shall we consider the next killer
applications for TFTs ?
Also presented in Innovative Demonstration Session (see p. 215)
INP4 - 2:
15:40

Invited CMOS Image Sensor Technologies inBiomedical Applications
J. Ohta
Nara Inst. of S&T, Japan

CMOS image sensor technology has been advanced and recently
applied to various fields. This talk reviews recent applications of CMOS
image sensors technology to biomedical fields focusing on implantabledevices of a retinal prosthetic device and a brain-implantable imaging
device.

210

Thursday
INP4 - 3:
16:05

December 4
Invited Next Generation Natural User Interface, Tobii
Eye Tracking -Eye ExperienceK. Hachisu
Tobii Tech., Japan

INP4 - 4L
16:30

An Electric Hum Signal Readout Circuit for Touch
Screen Panel Applications
P.-Y. L. Li, C.-W. Lu
Nat. Tsing Hua Univ., Taiwan

This study presents a readout circuit, which senses the coupled electric
hum signal through fingers, for touch screen panel applications. A
16-channel readout prototype was implemented by using 0.18-μm
CMOS technology. The experimental results show that the proposed
readout circuit can recognize the touched-position by sensing theelectric hum signal.
Author Interviews and Demonstrations
18:30 – 19:30
Supporting Organizations:
Human Interface Society
The Forum for Advancement of Stereoscopic Three Dimensional
Image Technology and Arts
Holographic Display Artists and Engineers Club, The Japan Societyof Applied Physics
Technical Group on Information Sensing Technologies, ITE

The 50th Anniversary Speech of PDPs

“Summing Up of the PDP History
and a Peek at Plasma
Technologies Beyond Displays”(FED4 – 1)
Friday, December 5, 2014
15:15 - 15:55
Room 302B
See page 118 for detail
211

INP

Tobii works with developers and manufactures to create mind-blowinguser experiences with computers, games and other devices. We create
an intuitive interface that uses your natural eye movements.
Also presented in Innovative Demonstration Session (see p. 215)

Thursday

December 4

Innovative Demonstration
SessionThursday, December 4
16:45-19:30

Exhibition Hall B

Innovative Demonstration Session (1)LCT2 - 3

Polarizer-Free Imaging of LC Lens Using Reference
Image
C. Cui, R. Bao, S. Yu, X. Gong, M. Ye
SuperD, China

3Dp1 - 4

Volumetric 3D Display Using Rotating Screens
S. Suzuki, C. Fujikawa, M. Omodani
Tokai Univ., Japan

3Dp1 - 19L

Integral 3D Display Using Computer-Generated
Light Field Data
T. Iwane, M. Nakajima
Nikon, Japan

VHF1 - 1

General FPD Mura Index under the IEC
Measurement Standard
S. Hasegawa*,**, S. Tomioka*, K. Nagamine**Sony, Japan**JEITA, Japan

VHF4 - 2

Effect of Font Types and Pixel Density of Electronic
Displays on the Legibility of Japanese Characters
Y. Hisatake, T. Kawamorita*, Y. Kanno, S. Takahashi**,
M. Ito**, H. Takahashi**Japan Display, Japan*Kitasato Univ., Japan**DNP, Japan

VHFp1 - 4

Quantitative Visual Assessment of Moving Image
Quality for 4K8K UHDTV Systems
I. Kawahara, H. Tabata
Keisoku Giken, Japan

PRJ4 - 1

Laser Light Field Display Based on a Retinal
Scanning Array
M. Ide, K. Yoda, S. Kato
Citizen Holdings, Japan212

Thursday
PRJ4 - 2

December 4Compact Optical Engine for SmartGlass
H. Baba, T. Totani, T. Hashizume
Seiko Epson, Japan

PRJ6 - 1L

Small and Lightweight Optical Module for HMD
J. Iwai, K. Suzuki
Telepathy Japan, Japan

DES1 - 1

Diminished Reality Based on Image Inpainting for
Visually Removing Real Objects in Real Time
N. Kawai

DES1 - 2

I-DEMONara Inst. of S&T, JapanHMD Technologies for AR
K. Kiyokawa
Osaka Univ., Japan
DES1 - 3

Fog Display as a Co-creative Expression MediaY. Miwa, S. Itai, Y. Terada
Waseda Univ., Japan

DES2 - 1

Evolution of Displays through Advances in Next
Generation Video
A. Ninan, S. Daly
Dolby Labs., USA

DES2 - 4L

Fixed-Rate Compression for Frame Buffer
Application
N. Jacobson, A. Teng, M. Dai, I. Ikizyan, S. Saeed,
M. Aleksic
Qualcomm, USA

DES4 - 1

Low Power Liquid Crystal Driving Technique Basedon Capacitors for 1-Pixel Display
H. Manabe, M. Date*, H. Takada*, H. Inamura
NTT DOCOMO, Japan*NTT, Japan

FLX6/
FMC6 - 1

Flexible Substrates and Alternative Electrodes of
ITO for OLED Lighting
M. Koden, H. Kobayashi, T. Moriya, N. Kawamura,
T. Furukawa, H. Nakada
Yamagata Univ., Japan213

Friday

December 5
Friday, December 5

12:30-15:15

Exhibition Hall B

Innovative Demonstration Session (2)FMC4 - 1

Wide Field of View Optical Combiner for Augmented
Reality Head-Up Displays
H. Okumura, A. Hotta, T. Sasaki, K. Horiuchi, N. Okada
Toshiba, Japan

FMC4 - 3Fabrication of Special Glass-Beads Retroreflector
for Aerial Imaging by Retro-Reflection
Y. Tomiyama*, S. Suyama*, H. Yamamoto*,**,****Univ. of Tokushima, Japan**JST-CREST, Japan***Utsunomiya Univ., Japan

FMC5 - 1

Light Guide Plate Illumination with Blue Laser andQuantum Dot Emission
F. Shevlin
DYOPTYKA, Ireland

PH3 - 3

Wireless Power Transmission Method of a Powder
EL Sheet Device
K. Wani, T. Kanda, E. Hashimoto
TAZMO, Japan

3D2 - 2

Floating Digital Signage Based on Aerial Imaging
Techniques
H. Yamamoto*,**,***, S. Suyama****Utsunomiya Univ., Japan**JST-CREST, Japan***Univ. of Tokushima, Japan

3D2 - 3L

Comparison of Material Combinations for Brightand Clear Floating Image by Retro-Reflective Reimaging Technique
Y. Tokuda, A. Hiyama, M. Hirose, T. Large*
Univ. of Tokyo, Japan*Microsoft Appl. Scis. Group, USA

3D3 - 3Omnidirectional Video Streaming System with HMD
D. OchiNTT, Japan214

Friday
3D4 - 1

December 5
Realization of Homogeneous Brightness for
Autostereoscopic Displays with Directional
Backlights Composed of Convex Lens Arrays
S. Ishizuka, T. Mukai, H. Kakeya
Univ. of Tsukuba, Japan

3D4 - 2

Floating Touch Display Based on a Heterogeneous
Imaging System
Y. Maeda, D. Miyazaki, S. Maekawa*
Osaka City Univ., Japan*Parity Innovations, Japan
A Method of Image Quality Evaluation for Adaptive
Temporal Aperture Control with Hold-Type Displays
T. Usui, H. Sato, Y. Takano, T. Yamamoto, K. Ishii
NHK, Japan

PRJ5 - 4L

A Compact, Low Cost, Phase Randomizing Device
for Laser Illuminated Displays
F. Shevlin
DYOPTYKA, Ireland

DES3/
VHF5 - 2

The Realistic 3D Image Display Using Direct Light
Scanning Method
H. Horimai, K. Hattori*, T. Umezaki
3Dragons, Japan*Chubu Univ., Japan

INP3 - 3LInteractive Technologies with Applied Perception
J. Watanabe, S. Hirabara*, T. Maeda*, A. Hideyuki*
NTT, Japan*Osaka Univ., Japan

INP4 - 1

Sensor Applications Using Thin-Film Devices
Derived from Display Technologies - Flatpanel
Imager, Artificial Retina, Temperature Sensor,
Magnetic-Field Sensor, etc. M. Kimura, T. Matsuda, S. Noguchi, T. Sakamoto*,
T. Ozawa**, K. Aoki**, C.-C. Kuo**
Ryukoku Univ., Japan*AIST, Japan**AU Optronics, Japan

INP4 - 3

Next Generation Natural User Interface, Tobii Eye
Tracking -Eye ExperienceK. Hachisu
Tobii Tech., Japan215

I-DEMO

VHF3 - 2

IDW ’14 COMMITTEESORGANIZING COMMITTEE

General Chair:
K. Azuma
General Vice-Chair:
K. Betsui
Representative (ITE):
N. Shimidzu
		
H. Fujikake
Representative (SID):
K. Kondo		
M. Omodani
Standing (Executive Chair): S. Komura
Standing (Program Chair): A. MikamiStanding:
R. Hattori		
Y. Iimura		
K. Ishikawa
		
M. Kimura		
H. Okumura
		Y. Shimodaira		T. Tsujimura		Y. Yamamoto
Auditor:H. Sakurai

OVERSEAS ADVISORS

Overseas Advisor:
		
		
		
		
		
		
		
		
		
		
		
		

B. H. Berkeley
J. ChenN. Fruehauf
A. Ghosh
M.-K. Han
J. Jang
H.-S. Kwok
J.-N. Perbet
K.-R. Sarma
H.-P. D. Shieh
D. Theis
B. Wang
L. F. WeberEXECUTIVE COMMITTEE

Executive Chair:
Executive Vice-Chair:						Program Chair:
Program Vice-Chair:				Program Secretary:
		
		
		
		
		
		
		
		
		
		
216

S. Komura
H. Okumura
H. Sakurai
T. Shiga
K. Takatori
A. Mikami
Y. Gotoh
M. Kimura
Y. NakaiO. Akimoto
M. DateM. Higuchi
H. Hirata
Y. Hisatake
K. Ishikawa
H. KatoY. Kijima
H. Kominami
K. Makita
M. Shinohara

Shimadzu
HitachiNHK
Tohoku Univ.
Sharp
Tokai Univ.
Japan Display
Kanazawa Inst.of Tech.
Kyushu Univ.
Tokyo Univ. of A&T
Tokyo Inst. of Tech.
Ryukoku Univ.
Toshiba
Shizuoka Univ.
KONICA MINOLTA
Semiconductor Energy Lab.
Asahi Glass
Samsung Display, USA
ITRI, Taiwan
Univ. of Stuttgart, Germany
eMagin, USA
Seoul Nat. Univ., Korea
Kyung Hee Univ., Korea
Hong Kong Univ. of S&T, Hong Kong
Thales Avionics, France
Honeywell Int., USA
Nat. Chiao Tung Univ., Taiwan
Tech. Univ. Munich, Germany
Southeast Univ., China
Consult., USA
Japan Display
ToshibaAsahi Glass
Univ. of Electro-Commun.
NLT Techs.
Kanazawa Inst.of Tech.
Kyoto Univ.
Ryukoku Univ.
Toshiba
Sony
NTT
NIMS
Toray Eng.
Japan Display
Tokyo Inst. of Tech.
Sharp
Sony
Shizuoka Univ.
AIST
Omron

Publication Chair:
K. Ishii
Publication Vice-Chair: H. Kumomi
Publication:
H. Kawamura		T. Tsuzuki
Local Arrangement Chair: T. Katoh
Local Arrangement Vice-Chair: K. Kato
Local Arrangement:
K. TodaExhibition Chair:
S. Komura
Financial Supporting Chair: S. Komura
Treasurer:
T. Numao
General Secretary:
K. Betsui
Senior Member:
Y. Iimura
Members:
I. Fujieda
		
D. P. Gosain		
N. Hashimoto		
M. Inoue		
M. Inoue		
S. Kaneko
		S. Kobayashi
		T. Komaki		
H. Kuma		S. Maeda
		T. Miyashita		
S. Naemura
		Y. Sakamoto
		A. Sasaki		K. Suzuki		M. Suzuki		Y. Toko		T. Uchida		
H. Uchiike
		Y. Yanagi		
H. Yokoyama		M. Yuki

WORKSHOP CHAIR

LCT
AMD
FMC
PH
FED
OLED
3D
VHF
PRJ
EP
MEET
DES
FLX
INP

T. Ishinabe
Y. Fujisaki
T. Miyashita
Y. Nakanishi
H. Mimura
T. Wakimoto
S. YanoT. Kurita
S. OuchiH. Arisawa
M. Nakamoto
H. Okumura
H. Fujikake
N. Hashimoto

PROGRAM COMMITTEE

Program Chair:
Program Vice-Chair:				Program Secretary:		A. Mikami
Y. Gotoh
M. Kimura
Y. NakaiO. Akimoto
M. DateNHKTokyo Inst. of Tech.
NTT
NHK
ZEON
Niigata Univ.
Niigata Univ.
Japan Display
Japan Display
Sharp
HitachiTokyo Univ. of A&T
Ritsumeikan Univ.
AKT
Citizen Holdings
Huawei Techs. JapanApple
NLT Techs.
Tokyo Univ. of Sci. Yamaguchi
Panasonic
Idemitsu Kosan
Tokai Univ.
Tohoku Inst. of Tech.
Univ. of Southampton
Hokkaido Univ.
Kyoto Univ.
Toshiba Res. Consulting
Merck
Stanley Elec.
Sendai Nat. College of Tech.
Saga Univ.
Lumiotec
Kent State Univ.
Asahi Glass
Tohoku Univ.
NHK
Tohoku Inst. of Tech.
Shizuoka Univ.
Shizuoka Univ.
Merck
Shimane Univ.
NHK Media Tech.
HitachiFuji Xerox
Shizuoka Univ.
Toshiba
Tohoku Univ.
Citizen Holdings
Kanazawa Inst. of Tech.
Kyoto Univ.
Ryukoku Univ.
Toshiba
Sony
NTT
217

		
		
		
		
		
		
		
		
		
Committee:
LCT
AMD
FMC
PH
FED
OLED
3D
VHF
PRJ
EP
MEET
DES
FLX
INP

M. Higuchi
H. Hirata
Y. Hisatake
K. Ishikawa
H. KatoY. Kijima
H. Kominami
K. Makita
M. Shinohara

NIMS
Toray Eng.
Japan Display
Tokyo Inst. of Tech.
Sharp
Sony
Shizuoka Univ.
AIST
Omron

S. Ishihara
H. Kumomi
T. Tomono
N. Miura
H. Shimawaki
K. Monzen
M. Tsuchida
K. Masaoka
K. Ohara
T. Fujisawa
Y. NakaiK. Makita
T. Sekitani
T. Nakamura

Osaka Inst. of Tech.
Tokyo Inst. of Tech.
Toppan Printing
Meiji Univ.
Hachinohe Inst.of Tech.
Nissan Chem. Inds.
NTT
NHK
Texas Instr. Japan
DIC
Toshiba
AIST
Osaka Univ.
Japan Display

Workshop on LC Science and Technologies

Workshop Chair:
Program Chair:
Program Vice-Chair:		General Secretary:
Program Committee:
		
		
		
		
		
		
		
		
		
		
		
		
		
		

T. Ishinabe
S. Ishihara
S. OkaS. Shibahara
H. Wakemoto
F. Araoka
M. Funahashi
I. Hirosawa
M. Inoue
K. Ishikawa
A. Kubono
K. Miyachi
H. Nakata
M. Nishikawa
T. NoseH. Okada
M. Ozaki
M. Suzuki
T. Takahashi
S. Takanori

Workshop on Active Matrix Displays

Workshop Chair:
Program Chair:
Program Vice-Chair:
General Secretary:
Program Committee:
		
		
		
		
		
218

Y. Fujisaki
H. Kumomi
M. Inoue
H. Minemawari
A. C. Arias
K. Azuma
E. Fortunato
H. Hamada
M. Hiramatsu
S. Horita

Tohoku Univ.
Osaka Inst. of Tech.
Japan Display
Sony
Japan Display
RIKEN
Kagawa Univ.
JASRI
Apple
Tokyo Inst. of Tech.
Shizuoka Univ.
Sharp
DIC
JSR
Akita Pref. Univ.
Univ. of Toyama
Osaka Univ.
Merck
Kogakuin Univ.
JNC Petrochem.
NHKTokyo Inst. of Tech.
Huawei Techs. Japan
AIST
Univ. of California, Berkeley
Shimadzu
New Univ. of Lisbon
Kinki Univ.
Japan Display
JAIST

		
		
		
		
		
		
		
		
		

H. J. Kim
M. KimuraN. Morosawa
T. Noguchi
T. Ozawa
M. Shibazaki
K. Suga
K. Takatori
Y.-H. Yeh

Yonsei Univ.
Ryukoku Univ.
Sony
Univ. of the Ryukyus
AU Optronics
Innolux
Sharp
NLT Techs.
ITRI

Workshop on FPD Manufacturing, Materials and Components

Workshop Chair:
Program Chair:
General Secretary:
Program Vice-Chair:
Program Committee:
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		

T. Miyashita
T. Tomono
R. Yamaguchi
M. Shinohara
I. Amimori
T. Arikado
K. Dantani
A. Fujita
Y. Iimura
Y. Inoue
K. Käläntär
T. Katoh
C. C. LeeD. Matsuura
T. MoriY. Murata
S. Namekawa
T. Nonaka
Y. Saitoh
H. Sakurai
S. Takahashi
T. Takeda
Y. UkaiT. Unate
Y. Yang

Tohoku Inst. of Tech.
Toppan Printing
Akita Univ.
Omron
A51 Tech.
Tokyo Electron
ATMI JapanJNC Petrochem.
Tokyo Univ. of A&T
Corning Holding Japan
Global Optical Solutions
ZEON
ITRI
Dai Nippon Printing
Nitto Denko
ULVAC
Nippon Steel & Sumikin Chemical
AZ Elec. Materials
FUJIFILM
Asahi Glass
Sumitomo Bakelite
Nagase ChemteX
UDDI
UNATE
Japan Display

Workshop on EL Displays and Phosphors

Workshop Chair:
Program Chair:
General Secretary:
Program Committee:
		
		
		
		
		
		
		
		
		
		
		
		
		

Y. Nakanishi
N. Miura
N. Matsuda
K. Hara
T. Hisamune
S. Itoh
D. JeonH. Kobayashi
T. Kunimoto
T. Kusunoki
T. Miyata
T. Mukai
K. Ohmi
D. Poelman
M. Shiiki
K. Wani
R. XieShizuoka Univ.
Meiji Univ.
Toshiba Materials
Shizuoka Univ.
Mitsubishi Chem.
FutabaKAIST
Tottori Univ.
Tokushima Bunri Univ.
Dexerials
Kanazawa Inst. of Tech.
Nichia Chem.
Tottori Univ.
Gent Univ.
Hitachi Chem.
TAZMO
NIMS

Workshop on Field Emission Displays, CRTs and Plasma
Displays
Workshop Chair:

H. Mimura

Shizuoka Univ.

219

Program Chair:
General Secretary:
Program Committee:
		
		
		
		
		
		
		
		
		

H. Shimawaki
M. Nanba
Y. Gotoh
J. Ishikawa
H. Kajiyama
S. Mikoshiba
M. Nagao
M. Nakamoto
S. Okuda
T. Shiga
M. TakaiF. Wakaya

Hachinohe Inst.of Tech.
NHKKyoto Univ.
Chubu Univ.
Tokushima Bunri Univ.
Univ. of Electro-Commun.
AIST
Shizuoka Univ.
Okuda
Univ. of Electro-Commun.
Osaka Univ.
Osaka Univ.

Workshop on OLED Displays and Related Technologies

Workshop Chair:
Program Chair:
Program Vice-Chair:
General Secretary:
Program Committee:
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		

T. Wakimoto
K. Monzen
T. Ikuta
T. Uchida
C. Adachi
S. Aratani
S. Enomoto
T. Fukuda
R. Hattori
T. Inoue
Y. Kijima
T. Komatsu
H. Kuma
A. Mikami
H. Murata
S. Naka
K. Nakayama
Y. SakaiT. Shimizu
S. Tokito
T. Tsuji

Merck
Nissan Chem. Inds.
JNC Petrochem.
Tokyo Polytechnic Univ.
Kyushu Univ.
HitachiToshiba Lighting & Tech.
Saitama Univ.
Kyushu Univ.
TDK
Sony
Panasonic
Idemitsu Kosan
Kanazawa Inst.of Tech.
JAIST
Univ. of Toyama
Yamagata Univ.
MCRC
NHK
Yamagata Univ.
PioneerWorkshop on 3D/Hyper-Realistic Displays and Systems

Workshop Chair:
Program Chair:
General Secretary:
Program Committee:
		
		
		
		
		
		

S. YanoM. Tsuchida
K. Yamamoto
T. Fujii
T. Koike
T. Mishina
J.-Y. Son
C.-H. Tsai
M. Tsuboi
H. Yamamoto

Shimane Univ.
NTT
NICT
Nagoya Univ.
Hosei Univ.
NHK
Konyang Univ.
ITRI
NTT DoCoMo
Univ. of Utsunomiya

Workshop on Applied Vision and Human Factors

Workshop Chair:
Program Chair:
General Secretary:
Program Committee:
		
		
		
		
		
		
220

T. Kurita
K. Masaoka
A. Yoshida
J. Bergquist
S. Clippingdale
N. Hiruma
Y. Hisatake
M. Idesawa
H. IsonoA. Morishita

NHK Media Tech.
NHK
Sharp
Nokia
NHK
NHK
Japan Display
Univ. of Electro-Commun.
Tokyo Denki Univ.
Toshiba

		
		
		
		
		
		
		
		

Y. Nakamura
T. Nakatsue
G. Ohashi
K. Sakamoto
Y. Shimodaira
J. Someya
T. TamuraR. Yoshitake

Mitsubishi Elec.
Sony
Shizuoka Univ.
Panasonic
Shizuoka Univ.
Mitsubishi Elec.
Tokyo Polytech. Univ.
Shibaura Inst. of Tech.

Workshop on Projection and Large-Area Displays and Their
Components

Workshop Chair:
Program Chair:Vice-Secretary:
Program Vice-Chair:
General Secretary:
Program Committee:
		
		
		
		
		
		
		
		

S. OuchiK. Ohara
O. Akimoto
S. Shikama
T. Suzuki
Y. Asakura
K. GotoH. Kikuchi
H. Nakano
H. Sugiura
M. Takaso
C. Kusaka
T. Hashizume
S. Koike

Workshop on Electronic Paper

Workshop Chair:
Program Chair:
Program Vice-Chair:
General Secretary:
Program Committee:
		
		
		
		
		
		
		

H. Arisawa
T. Fujisawa
N. Kobayashi
Y. Toko
M. Higuchi
Y. Hotta
S. Maeda
M. Omodani
N.-S. Roh
A. Suzuki
M. Tsuchiya
G. Zhou

Hitachi
Texas Instr. JapanSony
Setsunan Univ.
JVC KENWOOD
Nittoh Kogaku
Ushio
NHK
Barco
Mitsubishi Elec.
Telepathy Japan
Techno Sys. Res
Seiko Epson

Fuji Xerox
DIC
Chiba Univ.
Stanley Elec.
NIMS
Ricoh
Tokai Univ.
Tokai Univ.
Samsung Display
Chiba Univ.
Innova Dynamics
South China Normal Univ.

Workshop on MEMS and Emerging Technologies for Future
Displays and Devices

Workshop Chair:
Program Chair:
General Secretary:
Program Committee:
		
		
		
		
		
		
		
		
		
		
		
		
		

M. Nakamoto
Y. NakaiT. Komoda
T. Akinwande
G. Barbastathis
M. Esashi
H. Fujita
J. Jang
H. Kikuchi
J. Kim
K. Matsumoto
W. Milne
S. Sugiyama
H. Tuller
S. Uchikoga
J.-B. Yoon
Y. Yoshida

Shizuoka Univ.
Toshiba
Panasonic
MIT
MIT
Tohoku Univ.
Univ. of Tokyo
Kyung Hee Univ.
NHK
Univ. of Oxford
Olympus
Univ. of Cambridge
Ritsumeikan Univ.
MIT
Toshiba
KAIST
Mitsubishi Elec.

221

Workshop on Display Electronic Systems

Workshop Chair:Workshop Vice-Chair:
Program Chair:
General Secretary:
Program Committee:
		
		
		
		
		
		
		
		
		
		
		
		
		
		

H. Okumura
T. Yamamoto
K. Makita
S. Takamura
R. Hattori
T. Fujine
K. Kagawa
K. Käläntär
L. Kerofsky
H.-S. Koo
H. Nam
O.-K. Kwon
T. Mitasaki
K. Morita
A. Nagase
H. Nitta
S. OnoA. Sakaigawa
K. Sekiya

Workshop on Flexible Electronics

Workshop Chair:
Program Chair:
General Secretary:
Program Committee:
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		

H. Fujikake
T. Sekitani
H. Maeda
K. Akamatsu
T. Eguchi
H. EndoM. Funahashi
T. Furukawa
H. Hirata
M. ItoT. KamataM. KimuraY. Mishima
A. Miyamoto
M. Nakata
T. Shiro
K. Takimiya
T. Tomono
K. UemuraY. Uraoka

Toshiba
NHK
AIST
NTT
Kyushu Univ.
Sharp
Shizuoka Univ.
Global Optical Solutions
Sharp Labs. of America
Minghsin Univ. of S&T
Kyung Hee Univ.
Hanyang Univ.
NTT
Nat. Traffic Safety & Environment Lab.
Mitsubishi Elec.
Japan Display
Panasonic
Japan Display
Kanagawa Inst. of Tech.

Tohoku Univ.
Osaka Univ.
DNP
Sony
Sumitomo Bakelite
NEC HV
Kagawa Univ.
Yamagata Univ.
Toray Eng.
Toppan Printing
AIST
Nagaoka Univ. of Tech.
FUJIFILM
Panasonic
NHK
TeijinRIKEN
Toppan Printing
Nippon Steel & Sumitomo Metal
Nara Inst. of S&T

Workshop on Touch Panels and Input Technologies

Workshop Chair:
Program Chair:
General Secretary:
Program Committee:
		
		
		
		
		
		
		
		
		
		
222

N. Hashimoto
T. Nakamura
H. Haga
I. Fujieda
K. Imoto
M. Inoue
K. KagawaH. KatoF. KooI. Mihara
K. Nakatani
H. Noma
H. Okumura
Y. Sasaki

Citizen Holdings
Japan Display
NLT Techs.
Ritsumeikan Univ.
Toshiba
Huawei Technologies Japan
Shizuoka Univ.
Sharp
Minghsin Univ. of S&T
ToshibaTouchpanel Labs.
Ritsumeikan Univ.
Toshiba
Mitsubishi Elec.

				K. Yamazaki
J. WatanabeCorning Holding JapanNTT

Special Topics of Interest on Oxide-Semiconductor TFT

Facilitator:
Program Committee:
AMD
FMC
FLX

M. Kimura

Ryukoku Univ.

H. Kumomi
R. Yamaguchi
M. Nakata

Tokyo Inst. of Tech.
Akita Univ.
NHK

Special Topics of Interest on Augmented Reality and Virtual Reality

Facilitator:
Program Committee:
FMC
3D
PRJ
DES
INP
VHF
DES

K. Makita

AIST

M. Shinohara
M. Tsuchida
O. Akimoto
K. Makita
N. Hashimoto
A. Yoshida
H. Okumura

Omron
NTT
Sony
AIST
Citizen Holdings
Sharp
ToshibaSpecial Topics of Interest on Lighting Technologies

Facilitator:
Program Committee
FMC
PH
OLED

Y. KijimaSony

M. Shinohara
K. HaraT. Ikuta

Omron
Shizuoka Univ.
JNC Petrochem.

Special Topics of Interest on Printed Electronics

Facilitator:
Program Committee:
LCT
AMD
FMC
OLED
DES
FLX

H. Hirata

Toray Eng.

K. Ishikawa
H. Minemawari
T. Tomono
K. Monzen
R. Hattori
H. Hirata

Tokyo Inst. of Tech.
AIST
Toppan Printing
Nissan Chem. Inds.
Kyushu Univ.
Toray Eng.

FINANCIAL SUPPORTING ORGANIZATIONS (as of November 1, 2014)
ADEKA corporation
Applied Materials, Inc.
ASAHI GLASS CO., LTD.
Japan Display Inc.
JSR Corporation
Nichia Corporation
Semiconductor Energy Laboratory Co., Ltd.
SHARP CORPORATIONTOKYO ELECTRON LIMITEDZEON CORPORATIONSUPPORTING MEMBERS (as of November 1, 2014)
EIZO Corporation
JAPAN BROADCASTING CORPORATIONJNC Corporation
Merck Ltd. JapanNLT Technologies, Ltd.
Panasonic Corporation
Toshiba Corporation
ULVAC, Inc.

223

COMPANIES LIST OF EXHIBITORS (as of November 1, 2014)FRAUNHOFER FEP
KONICA MINOLTA, INC.
Kyoei Engineering Co., Ltd.
NAGASE & CO., LTD.
Prolinx Corporation
Silvaco Japan Co., Ltd.
Toray Research Center, Inc.
TOYO Corporation
Ube Industries, Ltd.
Vitec Co., Ltd.
YUASA SYSTEM Co., Ltd.

UNIVERSITIES LIST OF EXHIBITORS (as of November 1, 2014)

Electron Device Engineering Labs., Univ. of Toyama
Faculty of Engineering, Univ. of the Ryukyus
Fujieda Lab., Ritsumeikan Univ.
Iimura Lab., Tokyo Univ. of A & T
Maeda Lab., Tokai Univ.
Mutsu Matsu Lab./Ryukoku Extension Center, Ryukoku Univ.
Nakamoto Lab., Shizuoka Univ.
Suyama Lab. (Univ. of Tokushima) & Yamamoto Lab. (Utsunomiya Univ.)224

IDW ’15
The 22nd International Display Workshops
December 9 – 11, 2015
Otsu Prince HotelOtsu, Japan
http://www.idw.or.jp

SID Display Week 2015
May 31 – June 5, 2015
San Jose Convention Center
San Jose, California, U.S.A.

Innovative Demonstration Session
by Oral and Poster Presenters

Live demonstrations of emerging information
display technologies
16:45 – 19:30 Thursday, December 4, 2014
12:30 – 15:15 Friday, December 5, 2014
Exhibition Hall B
See Page 212 - 215 for details

IDW ’14 Tutorial in Japanese
Organized by SID Japan Chapter
Tuesday, December 2, 2014
Room 301, 3F
TOKI MESSE Niigata Convention Center
Detailed information is available on
http://www.sid-japan.org
225

226

1F

Bus Stop for
Sado Kisen Ferry Terminal

Car Port

Cloak

Escalator
to Registration Main Escalator

Bus Stop for
Niigata Station

Hotel
Nikko
Niigata

Evening
Get Together(31F)

Bus Stop for
Niigata Station

Registration

Main Escalator
to 3F, 4F

B

A

Keynote / Invited Addresses

Secretariat

203 204

201

Snow Hall(Main Hall)

Exhibition
Hall B(1F)

Posters / Author Interviews and Demonstrations /Exhibition / Innovative Demonstrations

2F

FLOOR MAP

227

302A

302B

301

303

Speaker
Preparation
Room

Sado Kisen Ferry Terminal

Main Escalator

Niigata Station

3F

Marine Hall
(International Conference Room)

Main Escalator

4F

MEMO

228

IDW ’14 Workshop Timetable
2F Lobby

Snow Hall A

Snow Hall B

Room 301

Room 302 A

Room 302 B

Room 201

Fri., Dec. 5
AMExhibition Hall B

Thu., Dec. 4

Wednesday, December 3

OLED2
15:45 - 17:00

FMC2
15:45 - 16:45

LCT2
15:45 - 17:10

EP2
15:45 - 17:20

INP2
15:45 - 17:15

Exhibition
12:40 - 18:00

PRJ2
15:45 - 17:15

EP3†
9:00 - 10:38

PRJ3
9:00 - 10:25

VHF1
9:00 - 10:25

DES1
9:00 - 10:35

MEET1
9:00 - 10:30
FMCp, PHp,
3Dp, FLXp, INPp
9:00 - 12:00

Break
OLED4
10:45 - 12:10

LCT3
10:45 - 11:50

PRJ4
10:45 - 11:50

VHF2
10:45 - 12:10

DES2
10:45 - 12:20

MEET2
10:45 - 12:45

PRJ5†
13:30 - 15:02

MEET3
13:30 - 15:05

DES1: Display
Technologies inAugmented Reality
9:00 - 10:35

AMD2
10:45 - 12:20

3D3:
Omnidirectional
Hyper-Realistic
System
17:00 - 18:40

OLED3
9:00 - 10:25

Registration
8:00 - 18:00

AMD3
13:30 - 14:55

FLX3
13:30 - 15:00

LCT4
13:30 - 14:50

INP3
13:30 - 14:45

3D1
13:30 - 15:00

OLEDp, VHFp,
EPp, DESp
13:30 - 16:30

Break
AMD4
15:15 - 16:45

FLX4
15:15 - 16:45

LCT5
15:15 - 16:35

3D2
15:15 - 16:45

Exhibition
10:00 - 18:00

INP4
15:15 - 16:45

MEET4
15:15 - 16:55

PH2
17:00 - 18:05

MEET5
17:00 - 18:40

Break
AMD5
17:00 - 18:30

FMC3
17:00 - 18:00

3D3
17:00 - 18:40

VHF3
17:00 - 18:00

AMD6
9:00 - 10:15

3D4
9:00 - 10:20

PH3
9:00 - 10:25

FED1
9:00 - 10:35

VHF4
9:00 - 10:00
LCTp, PRJp
9:00 - 12:00

BreakRegistration
8:00 - 13:00

FMC5
10:45 - 12:05

AMD7
10:45 - 11:45

3D5
10:45 - 11:45

FLX6/FMC6
13:30 - 14:50

AMD8
13:30 - 14:15

3D6
13:30 - 14:55

VHF6
13:30 - 14:45

FED4
15:15 - 16:50

DES5
15:15 - 16:15

Innovative
Demonstration
Session (2)12:30 - 15:15

Break
PRJ6
15:15 - 16:35

3D7/VHF7
15:15 - 16:20†

Including Short Presentations

OLEDp2: Poster
13:30 - 16:30

AuthorInterviews &Demonstrations
16:45 - 17:45

Printed Electronics
Snow Hall B Exhibition Hall B

DES4
13:30 - 14:30

Lunch

Snow Hall A

FED3
13:30 - 14:50

Exhibition
10:00 - 14:00

OLED3: OLED
Process
Technologies
9:00 - 10:25

DES3/VHF5
10:45 - 12:30

FLX4: Printed
TFT Technologies
15:15 - 16:45

FED2
10:45 - 11:45

AMD5: Printed
Electronics
17:00 - 18:30

Friday, December 5

FLX5
10:45 - 11:50

FMCp3, PHp2:
Poster
9:00 - 12:00

FMC4
9:00 - 10:00

OLEDp1: Poster
13:30 - 16:30

OLED5
9:00 - 10:25

PH3: Phosphors forLighting Application
9:00 - 10:25

AuthorInterviews &Demonstrations
18:30 - 19:30

Innovative
Demonstration
Session (1)16:45 - 19:30

Lighting Technologies
Snow Hall B
Room 302 A Exhibition Hall B

PH1
15:15 - 16:25

DES3/VHF5:
System Design & FMC5: Lighting
Evaluation inTechnologies
Augmented Reality 10:45 - 12:05
10:45 - 12:30

Thursday, December 4

Lunch

IDW ’14 Special Topics of Interest Navigator

Reception at the Room “Continental” (4F) in Hotel Okura Niigata19:00 - 21:00
AMD1
9:00 - 10:15

Augmented Reality and Virtual Reality
Snow Hall B
Room 301
Room 302 B
Room 201FMC4:Augmented Reality& Virtual Reality
9:00 - 10:00

AuthorInterviews &Demonstrations
17:15 - 18:15

AMDp1: Poster
14:00 - 17:00

FLX2
15:45 - 16:40

FMCp4: Poster
9:00 - 12:00

AMDp
14:00 - 17:00

Break

Oxide-Semiconductor TFT
Snow Hall A
Marine Hall Exhibition Hall B

PRJ1
14:00 - 15:30

AMD1: High
Resolution Displays
Using LTPS &Oxide TFTs
9:00 - 10:15

INP1
14:00 - 15:30

OLED4: OLED
Materials (1)10:45 - 12:10

Registration
8:00 - 18:00

EP1
14:00 - 15:25

PRJ4: Wearable
Display
10:45 - 11:50

LCT1
14:00 - 15:20

AMD2: Physics of
Oxide
Semiconductors
10:45 - 12:20

FMC1
14:00 - 15:20

FLX3: Advanced
Printing
Technologies
13:30 - 15:00

OLED1
14:00 - 15:20

Wed., Dec. 3
PM

AMD6: Chemistryof Oxide
Semiconductors &TFT
9:00 - 10:15

AMD7:
Back-Channel
Etched Oxide TFT
10:45 - 11:45

FLX1
14:00 - 15:40

INP3: ARInteractive Systems
13:30 - 14:45

Opening,
Keynote & Invited Addresses
9:30 - 12:30

AMD3: Stability of
Oxide TFT
13:30 - 14:55

Evening Get-Together at Observation Deck (31F) in Hotel Nikko Niigata18:00 - 20:00

Lunch

AM

PM

3D2: Interactive 3D
Display Technology
15:15 - 16:45

Registration
17:00 - 20:00

Marine Hall

AMD4: Higher
Performance
Oxide TFT
15:15 - 16:45

Tue.,
Dec. 2

Date

IDW ’14 Session Navigator
Wednesday, December 3
PM

Thursday, December 4
17:15-18:15

AM

Exhibition Hall B
Active-Matrix Displays

18:30-19:30

Snow Hall A
High Resolution
Displays Using LTPS
& Oxide TFTs

Posters

Physics of Oxide
Semiconductors

Room 302 B
Display Electronic
Systems

Display Technologies
in Augmented Reality
Room 201

Emissive Technologies

Friday, December 5PM

Higher Performance
Printed Electronics
Oxide TFT

Exhibition Hall B

Chemistry of Oxide Back-Channel Etched
Oxide TFT
Semiconductors & TFT

Advanced Si
Technology
Room 201

System Design &Evaluation in
Augmented Reality*

A.I.
Room 302 B

Posters

A.I.

Phosphor for General

Phosphor
Applications

Exhibition Hall B
A.I.

16:45-17:45

Marine Hall

Exhibition Hall B

Posters

Exhibition Hall B

Solid-State Light
Source Technologies for
Projector

PM

Exhibition Hall B

Stability of Oxide TFT

Image Processing

AM

Display Driving
Technologies

Exhibition Hall B
Display Interface &Driving Technologies

Room 302 B
Novel Devices &Applications

Fabrication
Processes & New
Materials

Room 302 A

Snow Hall B

A.I.
Exhibition Hall B

FE Mechanisms &Summing Up of PDP
PDP Protective
History
LayersA.I.

Phosphors forLighting Technologies
Lighting Application
Room 302 A
e-Paper

Electrophoretic
Displays

Various Technologies
for e-Paper

Snow Hall A
Flexible Electronics

Flexible Backplane

Flexible Displays &Devices

Exhibition Hall B
A.I.

Marine Hall

Exhibition Hall B

A.I.

Posters
Room 302 A

Liquid-Crystal Technologies

Manufacturing, Process& Equipment

OpticalMeasurements
Room 301

Exhibition Hall B

Fast Switching LCD Novel Optics for LCD

A.I.

Exhibition Hall B

Posters

A.I.

Snow Hall B

Exhibition Hall B

Chromic Displays

Exhibition Hall B

Image Quality Evaluation& Human Factor

Exhibition Hall B

Advanced Printing
Technologies

Printed TFT
Technologies

Exhibition Hall B

Color & OLEDs

A.I.
Room 302 A
Moving Image Quality

Posters
Marine Hall

Photo Alignment

LC Materials

LC Evaluation

Snow Hall B

Marine Hall

Exhibition Hall B

Exhibition Hall B

Snow Hall B

Exhibition Hall B

Materials &Components

A.I.

Posters

Optical Films

A.I.

Advanced OLED
Technologies (1)Advanced OLED
Technologies (2)Solid-State Light
Source Technologies for
Projector

Vehicle Display

Room 302 B
Touch Panel (1)3D/Hyper-Realistic
Displays

A.I. Author Interviews & Demonstrations* Joint Session

Touch Panel (2) &Haptics

A.I.
Exhibition Hall B
A.I.

OLED Process
Technologies

Wearable Display

Novel Materials &Components

Nanotechnology
Display & Imaging

A.I.

Room 302 A

Room 301

Exhibition Hall B

Mobile Human
Factors & 'Kansei'
Evaluation

Visual Perception for
3D System*

A.I.

Snow Hall A

Exhibition Hall B

Augmented Reality Lighting Technologies Flexible Materials &Devices*& Virtual Reality

A.I.

A.I.
Exhibition Hall B

Snow Hall A

Exhibition Hall B

Posters

A.I.

OLED Materials (2)A.I.

Room 302 B

Exhibition Hall B

Projection
Applications

A.I.

Exhibition Hall B

Exhibition Hall B

Room 301

Room 302 A

Exhibition Hall B

A.I.

Posters

AR Interactive
Systems

Sensor &Applications

A.I.

Exhibition Hall B

Room 302 A

Posters

Flexible Materials &Devices*

Exhibition Hall B

OLED Materials (1)Room 301
Projection
Technologies

Exhibition Hall B

Exhibition Hall B

Emerging Quantum Fundamental Components EL Quantum Dots
Dots && Process Technologies
Technologies
Nanotechnologies

Room 201

Touch & Interactive
Technologies

Posters

Posters

Snow Hall B

Display Legibility

System Design &Evaluation in
Augmented Reality*

A.I.

A.I.

Exhibition Hall B

Room 201

Exhibition Hall B

Exhibition Hall B

Snow Hall B

Flexible Substrates

Exhibition Hall B

Exhibition Hall B

Room 201

Projection & Large Area
Displays

A.I.

Marine HallMEMS &
Nanotechnologies

Organic Light-Emitting
Displays & Organic Devices

Exhibition Hall B

Manufacturing
Technologies

Materials & Components

Snow Hall A

Holography

Room 301
Interactive 3D Display
Technology

Omnidirectional
Hyper-Realistic
SystemExhibition Hall B

Marine Hall

Exhibition Hall B

Posters

Wearable Display& Application

A.I.

Exhibition Hall B
A.I.

Room 301
3D/Hyper-Realistic
Displays (1)3D/Hyper-Realistic
Displays (2)Optical Devices for Visual Perception for
3D System
3D System*

Exhibition Hall B
A.I.

IDW ’14

THE 21ST INTERNATIONALDISPLAY WORKSHOPS
Special Topics of Interest on• Oxide-Semiconductor TFT• Augmented Reality and Virtual Reality• Lighting Technologies• Printed Electronics

http://www.idw.or.jp/• LC Science and Technologies (LCT)• Active Matrix Displays (AMD)• FPD Manufacturing, Materials
and Components (FMC)• EL Displays and Phosphors (PH)• Field Emission Displays, CRTs
and Plasma Displays (FED)• OLED Displays and Related Technologies (OLED)• 3D/Hyper-Realistic Displays and Systems (3D)
• Applied Vision and Human Factors (VHF)• Projection and Large-Area Displays
and Their Components (PRJ)• Electronic Paper (EP)• MEMS and Emerging Technologies
for Future Displays and Devices (MEET)• Display Electronic Systems (DES)• Flexible Electronics (FLX)• Touch Panels and Input Technologies (INP)

IDW ’14
FINAL PROGRAM

IDW ’14 Secretariat:
c/o Bilingual Group Ltd.
3-3-6 Kudan Minami, Chiyoda-ku,
Tokyo 102-0074, Japan
Phone：+81-3-3263-1345
FAX：+81-3-3263-1264
E-mail：idw@idw.or.jp

Workshops on

Final Program
TOKI MESSE Niigata Convention Center
Niigata, Japan
December 3 – 5, 2014