A5909

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Silicon PNP transistor epitaxial type
A5909

[ Applications ]Battery powered circuit[ Feature ]High DC gain hFE= 500-1500 at VCE= -2V, IC= -10mA
Low collector saturation voltage VCE(sat)= -0.5V (Max.) at IC= -3A, IB= -50mA[ Absolute maximum ratings (Ta=25C) ]Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)Collector current (Pulse)
Junction temperature
Storage temperature

Symbol Maximum ratings
VCBO
-15
VCEO
-15
VEBO-5IC-3
ICP-8Tj150Tstg-55 to 150

UnitVVVAACC[ Electrical characteristics (Ta=25C) ]Characteristic
SymbolCollector-base breakdown voltage
BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
DC current gain 1
hFE 1
DC current gain 2
hFE 2
DC current gain 3
hFE 3
DC current gain 4
hFE 4
Collector-emitter saturation voltage 1

VCE(sat) 1

Collector-emitter saturation voltage 2
Collector-emitter saturation voltage 3
Collector-emitter saturation voltage 4

VCE(sat) 2Base-emitter saturation voltage
Base-emitter on voltage
Transition frequency
Collector output capacitanceCollector input capacitanceTurn on time
Turn off time

VBE(sat)VBE(on)fT
CobCibtontoff

VCE(sat) 3
VCE(sat) 4Min.
-15-15
-5
500
400
300
150
100-

Typ.
-0.78
50260
35
400

Max.
-100-100
1500
-0.15
-0.25
-0.45
-0.5
-0.9
-Unit
VV
VnAnA
VV
V
V
V
V
MHz
pF
pF
nsnsConditions
IC= -100uA, IE= 0A
IC= -10mA, IB= 0A
IE= -100uA, IC= 0A
VCB= -10V, IE= 0A
VEB= -4V, IC= 0A
VCE= -2V, IC= -10mA
VCE= -2V, IC= -1A
VCE= -2V, IC= -2A
VCE= -2V, IC= -6A
IC= -0.5A, IB= -2.5mA
IC= -1A, IB= -5mA
IC= -2A, IB= -10mA
IC= -3A, IB= -50mA
IC= -1A, IB= -5mA
VCE= -2V, IC= -1A
VCE= -5V, IE= 50mA
VCB= -10V, f= 1MHz, IE= 0A
VEB= -0.5V, f= 1MHz, IC= 0A

VCC= -10V, IC= -500mA-IB1= IB2= 50mA

Notice 1) These are measured data of transistors assembled by PHENITEC SEMICONDUCTOR Corp. and are for reference only.
Notice 2) The contents described herein are subject to change without notice.

PHENITEC SEMICONDUCTOR Corp.

No. A5909-20070516- 1/2 -A5909

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Fig.1 IC - VBE(on)at VCE= -2V,Ta= 25C

Fig.2 hFE - IC
at VCE= -2V, Ta= 25C

10Fig.3 VCE(sat) - IC
at IC/IB= 60, Ta= 25C
10.1

0.01

Collector-emitter saturation
voltage : -VCE(sat) (V)1DC current gain : hFE

Collector current : -IC (A)

1000

100

100.001

0.001
0.5 0.7 0.9 1.1 1.3 1.5
Base-emitter on voltage: -VBE(on) (V)
Fig.4 VCE(sat) - IC
at IC/IB= 200, Ta= 25C

11010.1

0.01

0.1110110Fig.5 VBE(sat) - IC
at IC/IB= 200, Ta= 25C

Fig.6 fT - IE
at VCE= -5V, Ta= 25C
1000

0.1
0.001

0.01

0.1

110Collector current : -IC (A)Fig.7 Cob - VCB
at f= 1MHz, Ta= 25C

Fig.8 Cib - VEB
at f= 1MHz, Ta= 25C

100

100.0010.010.1
1Emitter current : IE (A)Collector input
capacitance : Cib (pF)Collector output
capacitance : Cob (pF)

0.1

Collector current : -IC (A)

11000

0.01

Collector current : -IC (A)Collector current : -IC (A)

1000

0.01
0.001

Transition frequency: fT (MHz)

Base-emitter saturation
voltage : -VBE(sat) (V)Collector-emitter saturation
voltage : -VCE(sat) (V)

0.1

10

10

0.01
0.001

0.01

0.1

100

100

10

100.1
110100
Collector-base voltage : -VCB (V)

0.1
110
Emitter-base voltage : -VEB (V)

0070516
PHENITEC SEMICONDUCTOR Corp.

No. A5909-20070516- 2/2 -