IDW ’06
THE 13TH INTERNATIONALDISPLAY WORKSHOPS

Workshops on• LC Science and Technologies• Active Matrix Displays• FPD Manufacturing, Materials andComponents• CRTs• Plasma Displays• EL Displays, LEDs and Phosphors• Field Emission Display• Organic LED Displays• 3D/Hyper-Realistic Displays and Systems• Applied Vision and Human Factors• Projection and Large-Area Displays,
and Their Components• Electronic Paper• MEMS for Future Displays
and Related Electron Devices

Topical Session on• Display Electronic Systems•

Final Program
Otsu Prince HotelOtsu, Japan
December 6(Wed) – 8(Fri), 2006

CONTENTS
Program Highlights............................................................................... 6
General Information.............................................................................. 9
Hotel And Travel Information .............................................................. 12
Plenary Sessions
Wednesday, December 6
IDW ’06 Opening ................................................................................ 20
IDW ’06 Keynote Address .................................................................. 20
IDW ’06 Invited Address ..................................................................... 20
Workshop on LC Science and Technologies
Wednesday, December 6
LCT1 New Materials........................................................................ 22
LCT2 LC Alignment (1).................................................................... 23
LCT3 LC Alignment (2).................................................................... 25
LCTp1 Poster : New Materials ........................................................... 26
LCTp2 Poster : LC Alignment ........................................................... 27
LCTp3 Poster : LCD Modes .............................................................. 31
LCTp4 Poster : Characterization....................................................... 41
Thursday, December 7
LCT4 LCD Modes (1) ...................................................................... 43
LCT5 LCD Modes (2) ...................................................................... 44
LCT6 LCD Modes (3) ...................................................................... 45
LCT7 Characterization .................................................................... 47
Workshop on Active Matrix Displays
Wednesday, December 6
AMD1 LC-TV .................................................................................. 49
AMD2 TFT Novel Applications.......................................................... 50
AMD3 SOG/Mobile ........................................................................... 51
Thursday, December 7
AMD4/OLED4 AM-OLED ................................................................. 53
AMD5 Emerging TFT Technologies.................................................. 55
AMDp Poster : Active-Matrix Displays............................................... 56
AMD/OLEDp Poster : AM-OLED....................................................... 67
Friday, December 8
AMD6 TFT Technologies (1)............................................................. 70
AMD7 TFT Technologies (2)............................................................. 72
AMD8 Organic TFT (1) ..................................................................... 73
AMD9 Organic TFT (2) ..................................................................... 74
Workshop on FPD Manufacturing, Materials and Components
Wednesday, December 6
FMC1 Color Filters ........................................................................... 76
FMC2 Optical Films (1) .................................................................... 77
FMC3 Optical Films (2) .................................................................... 78

1

Thursday, December 7
FMC4 Manufacturing Technologies (1) ............................................ 80
FMC5 Manufacturing Technologies (2) ............................................ 81
FMC6 Materials ................................................................................ 83
FMCp Poster : FPD Manufacturing, Materials & Components.......... 84
Friday, December 8
FMC7 Backlight Systems (1)............................................................ 95
FMC8 Backlight Systems (2)............................................................ 97
FMC9 Backlight Systems (3)............................................................ 98
Workshop on CRTs
Thursday, December 7
CRTp Poster : CRTs ......................................................................... 99
CRT1 Future CRT Technology & Market ......................................... 99
CRT2 Cathode & Mask .................................................................. 100
CRT3 Electron Gun........................................................................ 101
Workshop on Plasma Displays
Wednesday, December 6
PDP1 Protective Layer (1) ............................................................. 103
PDP2 Protective Layer (2) ............................................................. 105
Thursday, December 7
PDPp1 Poster : PDP(1)................................................................... 106
PDPp2 Poster : PDP(2)................................................................... 112
Friday, December 8
PDP3 Driving Method .................................................................... 117
PDP4 Fabrication........................................................................... 118
PDP5 PDP TV................................................................................ 120
Workshop on EL Displays, LEDs and Phosphors
Wednesday, December 6
PHp
Poster : Phosphors ............................................................... 122
Thursday, December 7
PH1
ELDs.................................................................................... 129
PH2
LEDs.................................................................................... 130
PH3
Phosphors for PDPs ............................................................ 132
PH4
Phosphors ........................................................................... 134
Friday, December 8
FED2/PH5
Phosphors for FED and FEA Backlight Unit ............... 135
Workshop on Field Emission Display
Friday, December 8
Opening............................................................................................ 137
FED1 FEDs and Novel Devices..................................................... 137
FED2/PH5
Phosphors for FED and FEA Backlight Unit .............. 139
FED3 CNT-FEs for FEDs ............................................................... 140
FED4 FED Driving Methods and FE Materials .............................. 143

2

Workshop on Organic LED Displays
Wednesday, December 6
OLED1 OLED Technology ............................................................ 145
OLED2 Device Technology........................................................... 146
OLED3 Phosphorescent OLED .................................................... 147
Thursday, December 7
AMD4/OLED4 AM-OLED ............................................................... 149
OLEDp Poster : OLED Poster ......................................................... 151
AMD/OLEDp Poster : AM-OLED..................................................... 159
Workshop on 3D/Hyper-Realistic Displays and Systems
Thursday, December 7
Opening............................................................................................ 163
3Dp
Poster : 3D and Hyper Realistic Display............................... 163
3D1
3D Display (1)...................................................................... 165
3D2Holographic and Advanced Displays ................................... 167
Friday, December 8
3D3
Hyper Realistic Display and Human Factor ......................... 168
3D4
3D Display (2)...................................................................... 170
Workshop on Applied Vision and Human Factors
Wednesday, December 6
VHFp Poster : Human Factors and Image Quality .......................... 172
Thursday, December 7
VHF1 Human Factors .................................................................... 178
VHF2 Color Reproduction.............................................................. 180
VHF3 Image Quality ...................................................................... 181
VHF4 Moving Image Quality (1) .................................................... 183
VHF5 Moving Image Quality (2) .................................................... 184
Workshop on Projection and Large-Area Displays,
and Their Components
Thursday, December 7
LADp Poster : Components and Circuits for Projector .................... 186
Friday, December 8
LAD1 Projection Components ....................................................... 187
LAD2 Emerging Illumination .......................................................... 188
LAD3 Digital Cinema & Home Theater.......................................... 189
Workshop on Electronic Paper
Wednesday, December 6
EP1
Electronic Paper (1) ............................................................. 191
EP2
Electronic Paper (2) ............................................................. 192
Thursday, December 7
EPp
Poster : Electronic Paper...................................................... 193

3

Workshop on MEMS for Future Displays andRelated Electron Devices
Thursday, December 7
Opening............................................................................................ 196
MEMS1
Emerging MEMS Technologies ..................................... 196
MEMS2
Optical MEMS and Sensors .......................................... 197
MEMS3
Fundamental Mechanism, Materials andProcess Technologies ................................................... 200
MEMS4
Displays and Imaging (1) .............................................. 201
MEMS5
Displays and Imaging (2) .............................................. 203
Topical Session on Display Electronic Systems
Thursday, December 7
DESp Poster : Display Electronic Systems ..................................... 205
Friday, December 8
Opening............................................................................................ 209
DES1 Circuit Technique for High Quality Image ............................ 209
DES2 Video Processing for High Quality Image............................ 210
DES3 High Dymanic Range Display Technology........................... 212
DES4 Mobile Optimized System.................................................... 213
IDW ’06 Committees ........................................................................ 215
Floor Plan ......................................................................................... 225
IDW ’06 Timetable
IDW ’06 Session Navigator

4

EXHIBITION
12:00–18:00 Wednesday, Dec. 6
9:00–18:00 Thursday, Dec. 7
9:00–14:00 Friday, Dec. 8
Ohmi 5–7 (2F)
Otsu Prince HotelFree admission with your registration name tag.

BANQUET
Wednesday, December 6
19:10–21:10
Prince Hall (3F)
Otsu Prince HotelSee page 9 for details

Outstanding Poster Paper
Awards Ceremony
Friday, December 8
See page 9 for details

IDW ’07
The 14th International Display Workshops
December 5-7, 2007
Sapporo, Japan

5

PROGRAM HIGHLIGHTS
Scientific and technological advances in research and development on
information displays will be found at the 13th International Display
Workshops (IDW ’06). A feature of the IDW ’06 is an integration of thefollowing thirteen workshops and one topical session.
Workshops on• LC Science and Technologies• Active Matrix Displays• FPD Manufacturing, Materials and Components• CRTs• Plasma Displays• EL Displays, LEDs and Phosphors• Field Emission Display• Organic LED Displays• 3D/Hyper-Realistic Displays and Systems• Applied Vision and Human Factors• Projection and Large-Area Displays, and Their Components• Electronic Paper• MEMS for Future Displays and Related Electron Devices
Topical Session on• Display Electronic Systems
The three-day conference will feature 522 papers, including 1 keynote
address, 2 invited addresses, 75 invited papers, 163 oral papers, 212
poster papers and 69 late-news papers. Following keynote and invitedaddresses on Wednesday morning, presentations will begin and continue
in six parallel sessions through Friday. Poster sessions and author interviews will enable participants to discuss presented issues in detail. Exhibitions from display and related industries will also be featured from
Wednesday to Friday in parallel with workshops and topical session. The
IDW ’06 should be of interest not only to researchers and engineers, butalso to those who manage companies and institutions in the display community.

Workshop on LC Science and Technologies (LCT)
Recent advances in LC materials and device technologies are presented. The session covers from fundamental studies to recent development in LCD technologies. New materials for LCD application, fast
response LCDs, LC alignment process, LC mode, flexible LCD, opticaldesign & characterization, and novel devices are discussed.

Workshop on Active Matrix Displays (AMD)Recent progress in TFT technologies and active matrix displays arewidely discussed.
Sessions cover device and process technologies for a-Si, poly-Si,organic and new material TFTs, featuring fifteen topical invited talks.
Their applications to active matrix displays including LC-TVs, mobile
displays, electronic paper and OLED displays are presented.
Furthermore, novel applications to sensors, detectors, Braille display
and system on panel are discussed.

Workshop on FPD Manufacturing, Materials and Components(FMC)
This workshop includes 11 invited papers dealing with the overview oftechnical trends and the new related technologies on FPDs. In the technical sessions, papers deal with optical components, lamps, process technologies, measurement systems, recycling technologies, etc. for FPDs.
6

Workshop on CRTs (CRT)
It is thought that the CRT is declining, because of the growth of the Flat
Panel Display. However, still the cost performance of the CRT is thebest among all the displays.
In this Workshop, further performance improvements such as novel
electron gun design and digital orthogonal scanning will be discussed.
Also, the cost reduction technologies such as AK shadow mask application to the real flat tube will be presented.

Workshop on Plasma Displays (PDP)
MgO protecting layer is the highlight of the workshop. By speculating
the “Da Vincci Code of MgO,” Dr. Tolner tries to clarify its property.
There also are several papers introducing innovative processes of thelayer. Matsushita explains the property of the 103-in. PDP which is now
the world largest. Novel fabrication processes are also introduced in theworkshop. One is a “Precision Replication Process” for barrier rib formation, presented by Sumitomo 3M. The technique enables to fabricate
2k/4k-resolution PDPs without difficulty. The other is the “plasma2” inwhich plasma displays are fabricated by using a plasma processing
technology. The substrate modification, as well as phosphor activation
can be completed with a 2m-wide processor.

Workshop on EL Displays, LEDs and Phosphors (PH)This workshop covers the latest R&D achievement in inorganic ELDs,
phosphors for emissive displays and solid-state illumination as well as
LEDs. Invited talks present phosphors for LEDs, Spindt- and CNT-type
FEDs, fine phosphor particles by spray-based methods, and luminescence and biological applications of nanophosphors. Contributed papers
also include interesting topics such as luminescent mechanism, thin-film
phosphors and new phosphor materials for ELDs, FEDs, LEDs and
PDPs. In addition, joint sessions will be held with the FED Workshop.

Workshop on Field Emission Display (FED)
Recent progresses in FEDs with Spindt-type field emitter arrays (FEAs)
or carbon nanotube (CNT) FEAs are presented. Phosphors for FEDsand FEA-backlight-units are also presented at the joint session with PH
Workshop. Furthermore, various fabrication technologies of CNT fieldemitters, driving methods suitable for FEDs, and image sensing technology with an active-matrix Spindt-type FEA are discussed.

Workshop on Organic LED Displays (OLED)This workshop includes recent developments in organic light-emitting
materials, devices and display systems. New organic fluorescent andphosphorescent materials are reported, and highly efficient OLEDs
using these materials are presented. In addition, durability, the fabrication process and the evaluation system will be also discussed.

Workshop on 3D/Hyper-Realistic Displays and Systems (3D)This workshop focuses on recent progress in 3D, holography and related
visual science. It also covers 3D, hyper-realistic image progressing suchas multiview interpolation and high-fidelity color reproduction. Invited
talks in this workshop include the topics from forefront of 3D/holographic
technologies and the recent researches into advanced display systems.

Workshop on Applied Vision and Human Factors (VHF)
This workshop provides a forum for discussion of the latest industrial andacademic R&D in the field of applied vision and human factors associatedwith display technology, including methods for improved color reproduction
and the assessment and improvement of the perceived quality of still andmoving images. The workshop constitutes a unique opportunity to interact
and discuss the latest advances with world-renowned experts in the field.
7

Workshop on Projection and Large-Area Displays, and Their
Components (LAD)
The worldwide hottest technologies for projection displays will make thisworkshop exciting. Invited talks will cover topics on emerging technologies such as photonic crystals, semiconductor laser and digital cinema.
In the general talks, screen, light valve, light source and optical systems
for enhancing display performance will be discussed.

Workshop on Electronic Paper (EP)This workshop focuses on current topics on electronic paper, rewritable
paper, paper-like display, and flexible display. Various novel technologies including electrophoretic, electrochromic, liquid crystal, and tonerdisplay systems will be reported. Concepts, systems, devices, andmaterials in this field are expected to be discussed.

Workshop on MEMS for Future Displays and Related Electron
Devices (MEMS)
The workshop is unique in covering all aspects of MEMS and nanotechnologies for future displays, imaging devices, and related electron
devices. It seeks to broaden the horizon of display technologies into
MEMS technologies. Among MEMS and display conferences in theworld, this is the only opportunity where MEMS researchers gather todiscuss on such devices. Research areas such as, materials, basic
physics and fabrication process are included. Authorities of this field areinvited from top research institutions around the world. Invited speakers
are from CEA-LETI, Eastman Kodak, Ecole PolyTech., MIT, Qualcomm,Tohoku Univ., Univ. of Cambridge, and Univ. of Tokyo (in alphabeticalorder). Together with excellent contributed papers, this workshop invites
attendants who wish to cut open a new field of display and imaging
devices.

Topical Session on Display Electronic Systems (DES)This session will cover all aspects of display systems in relation to electronics: video data processing, interface technologies, cooperative
operations between display components such as cells and backlights,
combinations with other input/output devices, applications to the newareas, system performance, or power consumption.
Since this session is newly introduced, a number of speakers are invited
to clarify our focusing fields and objectives. We will have interesting
speeches on the recent hot topics such as high dynamic range display
systems, high quality video processing and mobile display technologies.

Outstanding Poster Paper Awards Ceremony
A limited number of outstanding poster papers will be awarded on
December 8, from 12:10 to 13:50 in Prince Hall (3F), Otsu Prince Hotelfollowing Otsu Festival.

Exhibition
The exhibition will open at 12:00 on December 6 and close at 14:00 on
December 8 in Ohmi 5-7 of Otsu Prince Hotel. The latest researches,
technologies and products for display device, material, components,
systems, application, manufacture, measurement, software and others
related to this workshop will be presented. Please take these opportunities to enjoy informative discussions with exhibitors.
December 6: 12:00 – 18:00
December 7: 9:00 – 18:00
December 8: 9:00 – 14:00

8

GENERAL INFORMATIONSPONSORSHIP
IDW ’06 is sponsored by the Institute of Image Information and Television Engineers (ITE) and Society for Information Display (SID).

WORKSHOP SITE
Otsu Prince Hotel
7-7, Nionohama 4-chome
Otsu-shi, Shiga 520-8520, Japan

ON-SITE SECRETARIAT
Telephone and fax machines for IDW ’06 use will be temporarily set up
in the secretariat room at Otsu Prince Hotel (Room Eizansumire 2, 1F)(December 5-8).
Phone/Fax: +81-77-526-2606

BANQUETA buffet-style banquet will be held on December 6 from 19:10 to 21:10
in Prince Hall (3F), Otsu Prince Hotel. As the number of tickets is limited, you are urged to make an advance reservation by completing theenclosed registration form and returning it with payment.

EVENING GET-TOGETHER WITH WINE
A get-together will be held on December 5 from 18:00 to 20:00 in Otsu
Prince Hotel (place to be noticed at registration desk). Wine (sponsored by Merck Ltd., Japan) will be served to participants with a relaxedatmosphere for informal discussion.

OUTSTANDING POSTER PAPER AWARDS CEREMONY ANDOTSU FESTIVAL
Poster Awards will be given to a limited number of outstanding poster
papers, following Otsu Festival, on December 8 from 12:10 to 13:50 in
Prince Hall (3F), Otsu Prince Hotel.

REGISTRATION
Registration is available in advance and also on site. However, proceedings book might not be guaranteed for the on-site registrants in case of
the unexpected excess of the on-site registration. Advance registrationis strongly recommended.

Registration Fees
The registration fee for IDW ’06 includes admission to the conference, a
copy of the proceedings in book or in USB memory, and CD-ROM. The
proceedings in USB memory can be selected only by those who registered and paid by 24:00, November 8 (Japan Standard Time).
Paid by Nov. 8
After Nov. 8
Member of SID/ITE/ASO*¥ 30,000¥ 40,000
Non-Member¥ 35,000¥ 45,000
Student**¥ 8,000¥ 10,000
Life Member of SID/ITE¥ 8,000¥ 10,000Banquet¥ 8,000¥ 10,000*ASO: Academic Supporting Organizations(See p. 11 as well as “Supporting Organizations and Sponsors” at theend of each workshop/topical session section.)**Student ID is required.
Please note that the reduced registration fee must be paid by November
8. In case of the payment after November 8 or on site, prices afterNovember 8 will be applied even if you sent the registration form by
9

November 8, 2006. Also note that the number of banquet tickets to register on site is limited.
For additional sets of the proceedings book or USB memory*, and CDROM
Book & CD-ROM USB & CD-ROM*
At the conference site
¥ 8,000¥8,000Airmail after the conference¥12,000
not available
Sea/Domestic mail after the conference¥10,000
not available*Additional Sets of USB memory and CD-ROM can be selected only by
the application with payment by November 8.

Payment
Three ways are provided for the registration.

(1) e-Registration
Access the following URL.
http://idw.ee.uec.ac.jp/regist.html
The e-Registration is acceptable until November 21, 2006.

(2) Mail or Fax Registration
Complete the registration form (FORM A) at the centerfold and send it
to the secretariat together with all necessary payments no later thanNovember 21, 2006.
IDW ’06 Secretariat
c/o ABEISM CORPORATION
4-30-12 Kamimeguro, Meguro-ku, Tokyo 153-8571, Japan
Phone: +81-3-5720-7022 Fax: +81-3-6203-8238
E-mail: idw@abegroup.jp
The registration fee should be remitted by one of the following methods.
1. Bank transfer (only applicable to domestic participants) to:
Account name: IDW
Account No.: 1054350 (ordinary account)
Bank Name: Mizuho Bank
Branch Name: Azamino Branch
Please attach a copy of your bank remittance form with theregistration form to avoid possible troubles.
2. Bank check made payable to “IDW” together with the registrationform
3. Credit card (only VISA or MasterCard accepted)
All above payments should be made in JAPANESE YEN.
Also, please note that personal and traveler’s checks are not accepted.

(3) On-site Registration
Conference registration desk will be open:
December 5 (Tue.)
17:00–20:00
December 6 (Wed.)
8:30–18:00
December 7 (Thu.)
8:30–18:00
December 8 (Fri.)
8:30–15:00
The on-site registration fee will be payable by:
1. Cash (JAPANESE YEN only)
2. Credit card (VISA or MasterCard only)
Bank transfer, bank check, and personal/traveler’s checks are notaccepted. Payment by cash is recommended.

Cancellation Policy
Refunds for registration, banquet, additional sets of proceedings etc.
will be made on written cancellation received by IDW ’06 secretariat by
November 8. For cancellations received after November 8 or no-shows,refunds will not be made. However, after IDW ’06 closes, a set of the10

proceedings book/USB memory and CD-ROM will be sent to the registrants who have paid the registration fees.

INQUIRIESIDW ’06 Secretariat
c/o ABEISM CORPORATION
4-30-12 Kamimeguro, Meguro-ku, Tokyo 153-8571, Japan
Phone: +81-3-5720-7022 Fax: +81-3-6203-8238
E-mail: idw@abegroup.jp

Please pay attention to the website (http://idw.ee.uec.ac.jp/)
for latest information.

ACADEMIC SUPPORTING ORGANIZATIONSThe Chemical Society of JapanThe Electrochemical Society of Japan (ECSJ)The Illuminating Engineering Institute of JapanThe Imaging Society of Japan
Information Processing Society of JapanThe Institute of Electrical Engineers of JapanThe Institute of Electronics, Information and Communication Engineers(IEICE)The Institute of Image Electronics Engineers of Japan
Japan Ergonomics Society (JES)The Japanese Liquid Crystal Society (JLCS)The Japan Society of Applied Physics
The Virtual Reality Society of Japan

Fund for the conference is furnished in part by:
Shiga Prefecture

IDW Tutorial in Japanese
Tuesday, December 5
Ohmi 10 (2F)
Otsu Prince Hotel
Detail information will be available in October:
http://www.sidchapters.org/japan/wiki.cgi
Contact address:
idw.tutorial@tmdisplay.com
11HOTEL AND TRAVEL INFORMATIONHOTEL RESERVATIONSThe IDW ’06 executive committee has secured enough rooms for theparticipants. Participants who want to stay in Otsu area during IDW ’06
should make reservations directly with the hotel by themselves as follows. Reservation will be made on a first-come, first-served basis.

Methods of Application
1. Through the IDW ’06 website (http://idw.ee.uec.ac.jp/hotelform.html)
2. By fax, using the enclosed Form B (Please copy the form.)

Confirmation from the Hotels
1. Confirmation will be sent to the applicants directly from the hotel a
few days after receiving your application.
2. If your application is not accepted by the hotel, please select anotherhotel and send your request for a reservation to the hotel through theweb or by fax using Form B.
3. In case there is no vacancy for your request again, please follow theprocedure described above.

VISAS
Visitors from countries whose citizens must have visas should apply toa Japanese consular office or diplomatic mission in their respective
country. For further details, please contact your travel agent or the local
consular office in your country.
Attention: For some countries’ citizens, official documents prepared by
the IDW ’06 committee will be needed. Please ask the IDW ’06 secretariat for its application at least two months before the conference.

JAPAN RAIL PASS
Tourists visiting Japan from abroad can save with a Japan Rail Pass.
These 7-, 14-, or 21-day passes are valid for unlimited travel on the
Shinkansen trains (except NOZOMI) and other JR lines, plus its buses
and ferries.
For details, please ask your travel agent and purchase an exchangeorder at an authorized agent before coming to Japan. This pass cannot
be purchased in Japan.
After you arrive in Japan, you turn in the exchange order to receive yourJAPAN RAIL PASS at an applicable JR station that has a JAPAN RAILPASS exchange office.
Ex.
Narita Airport
Narita Airport Terminal 2
Kansai Airport
JR Tokyo Station

Travel Service Center
Ticket Office
Travel Service Center
Ticket Office
Ticket Office
Travel Service Center
Travel Service Center

JR Nagoya Station
JR Kyoto Station

Ticket OfficeJAPAN RAIL PASS
Exchange Corner
Ticket Office

11:30–19:00
6:30–11:30, 19:00–21:45
11:30–19:00
6:30–11:30, 19:00–21:50
5:30–23:00
10:00–19:00(Marunouchi North)
10:30–19:30(Yaesu Central)
5:30–22:45
10:00–18:00
8:30–23:00

CLIMATE
The average temperature in Otsu during the period is around 7°C, with
11°C in the daytime and 2°C at night on the average.

12

OTSU CITY
Otsu City is located on the southern edge of Lake Biwa, which is thelargest lake in Japan at 672 km2. It is the capital of Shiga Prefecture
and is rich in history and natural beauty. About 1,300 years ago, it
was the capital of Japan for a brief period of time. At the end of the
8th century, Kyoto became the heart of Japan, and Otsu prospered
as a gateway to Kyoto for both land and water transportation systems. It was also a center for Buddhism.
Now, it is a tourist center and a port for excursion boats on Lake
Biwa. The views from Otsu Prince Hotel are magnificent. Around twilight, Lake Biwa gradually changes its colors and the city starts tolight up along the shore. The city’s industrial products include electrical appliances, textiles, precision instruments, computer components, and machinery.

PLACES OF INTEREST
Lake Biwa
Lake Biwa occupies 1/6 of Shiga Prefecture. More than 450 rivers
flow into the lake and there is only one natural outlet, the Seta River.
The lake supplies water to some 14 million residents around anddownstream of the lake including Osaka, Kyoto and Kobe Cities.
There are a number of historic sites, hot springs, and other attractive
tourist spots around the lake. Several types of boat cruises startfrom Nagisa-Koen Park as well as from Otsu Prince Hotel.

Enryakuji Temple
The temple was founded in 788 by the Buddhist Priest Saicho (767–822) to protect the former capital of Kyoto from evil spirits from thenortheast. It was (and still is) the headquarters of the Tendai sect,the Buddhist sect that was popular among the aristocracy of the timeand served as the foundation for a number of later sects. At the peakof its power, Enryakuji Temple was a huge complex of 3,000 subtemples. A powerful army of warrior monks occasionally engaged in
power struggles with other monasteries and political leaders. In
1571, warlord Oda Nobunaga ended this Buddhist militancy byattacking and razing the huge temple complex on Mt. Hiei. Currently,
there are 200 temple buildings and its forest environment has great
scenic charm. The temple itself is in an excellent state of preservation and the main buildings are National Treasures. Enryakuji Temple was registered as a UNESCO World Heritage site in 1994. It is
located 10-min. walk from Enryakuji station of Hieizan-Sakamoto
Cablecar Line. It takes about 25 min. to get to JR Hieizan Sakamoto
station from JR Otsu station.

Miidera (Onjoji) Temple
Located at the foot of Mt. Hiei, this temple was founded in 686 by
Emperor Tenmu in honor and memory of his brother. The name
“Miidera”, literally means “Temple of Three Wells”. It comes from thesprings at the temple which were used for the ritual bathing of newborns. The Evening Bell of Miidera is one of the well-known Omi
Hakkei (Best Eight Views of Omi, Shiga Pref.). Miidera is also
famous for the color of its autumn leaves and is an excellent place toenjoy beautiful Japanese autumn scenery until early December.
Take the Keihan Bus from JR Otsu station to Miidera bus-stop, or
take the Keihan Ishiyama Sakamoto Line to Miidera. The temple is
10-min. walk from Miidera station.
More information is available on
http://www.pref.shiga.jp/index-e.html
http://www.jnto.go.jp/eng/location/regional/shiga
13Outstanding Poster Paper
Awards Ceremony
andOtsu Festival
Friday, December 8
12:10–13:50
Prince Hall (3F)
Otsu Prince HotelSee page 9 for details

AD ’07
Asia Display 2007
March 12–16, 2007
Shanghai, China
http://ad07.ecnu.edu.cn/

SID 2007Society for Information Display
Symposium, Seminar & Exhibition
May 20–25, 2007
Long Beach, CA, U.S.A.
http://www.sid.org

14

ACCESS TO OTSU
Central Japan
Int’l Airport(CENTRAIR)(NGO)

Kansai Int’l
Airport(KIX)

Bus¥ 2,300 / 105 min

Narita Int’l
Airport(NRT)

JR Narita Express¥ 2,940 / 53 min
Meitetsu Rapid
Limited Express“Ǵ-Sky”¥ 1,200 / 30 min

JR Limited
Express Haruka¥ 2,980 / 77 min

Airport LimousineBus¥ 3,000 / 75 min

Haneda Airport
(HND)

Tokyo
Station

NagoyaStation
JR Shinkansen
Nozomi¥ 12,710 / 140 min

Domestic Flight
60 min28 flights / day

Osaka Int’l Airport(ITM)
JR Shinkansen
Nozomi¥ 4,930 / 36 minBus¥ 1,280 / 55 min

Kyoto Station
JR Biwako Line ¥ 190 / 8 min

Otsu Station
10 min byFree Shuttle Bus

Nagisa Park LineBus ¥ 200 / 15 min

IDW ’06 CONFERENCE SITE (OTSU PRINCE HOTEL)(as of July, 2006)*Information of this page may be changed. Please confirm the details
in each company.
15

16

Shin-Osaka

5 min

Yamashina

Kosei-Line

Nishi-Otsu

Kyoto (JR)Attention: Please don't take Kosei-Line.

Any train bound for Nagahama, Maibara,
Yasu, Kusatsu, Tsuge or Ohgaki goesto Otsu.

Trains for Otsu (Biwako-Line)depart from platform 2 of
JR Kyoto Station.

d

a
Zeze

Seta River

e

Seta

g
f

Kusatsu

JR-Shinkansen

Biwako-Line

b

Otsu

5 min

c

Bus

(Otsu Prince Hotel)

Conf
Conference
onfereerencee Site
Si

Lake
ke Bi
Biwa

Tokyo
NagoyaaOtsu Prince Hotel
Phone: +81-77-521-1111
bThe b` Otsu
Phone: +81-77-527-6711cHotel Bluelake Otsu
Phone: +81-77-524-0200dHotel Piazza Biwako
Phone: +81-77-527-6333
eSeta Urban Hotel
Phone: +81-77-543-6111
The nearest station: SetafUrban Hotel Kusatsu
Phone: +81-77-567-0606
The nearest station: KusatsugHotel Boston Plaza Kusatsu
Phone: +81-77-561-3311
The nearest station: Kusatsu

Access from Kyoto and Hotel Location

17

Kyoto

1

ine

ako-L

Kyoto

JR Biw

inMeish

Onjoji(Miidera Temple)

Expresswayb
JR Otsu Sta.
10aNishiki Sta.

Omi-Ohashi Bridge

Keihan Ishiyama Sakamoto Line
Keihan Zeze Sta.

500m

N

IDW ’06'06 Conference Site(OTSU
HOTEL)(OtsuPRINCE
Prince Hotel)

Nagisa Park Line Bus

Gichuji Temple

JR Zeze Sta.

dNagisa (Lakeside) Park
Biwako Hall

(Hotel a-d)

Otsu City

Biwako Bunkakan Hall

Ishiba Sta.

Shimanoseki Sta.

Tenson Jinja Shrine

Kamisakae machi Sta.

c

Keihan Hama-Otsu Sta.

Miidera Sta.

Otsu Station
Free ShuttleBus
Bsu Stop

JTB
Shiga Bank

Nagisa Park LineBus Terminal No. 2
for a route bus

N

North Exit
(Biwako Exit)

JR Otsu Sta.
Four bus services an hour (shuttle + route) will be available.
See http://idw.ee.uec.ac.jp/

EVENING GET-TOGETHERWITH WINE
Tuesday, December 5
18:00–20:00
Otsu Prince Hotel
Meeting place will be noticed at the registration desk.
(Sponsored by Merck Ltd., Japan)
See page 9 for details

18

EXHIBITION
12:00–18:00 Wednesday, Dec. 6
9:00–18:00 Thursday, Dec. 7
9:00–14:00 Friday, Dec. 8
Ohmi 5–7 (2F)
Otsu Prince HotelFree admission with your registration name tag.

Outstanding Poster Paper
Awards Ceremony
andOtsu Festival
Friday, December 8
12:10–13:50
Prince Hall (3F)
Otsu Prince HotelSee page 9 for details

ICDL 2007
The 1st International Conference on Display LEDs
Jan. 31–Feb. 2, 2007
COEX, Seoul, Korea
ICDL ’07 will provide the state-of-the-art LED
related technologies, in particular, LCD backlights,
LED Displays, LED chips, etc.

19

Wednesday

December 6

IDW ’06
Wednesday, December 6
9:00 - 9:10

Prince Hall

Opening
Master of Ceremony: K. Nunomura, Executive Chair
Opening Remarks
9:00
Y. Shimodaira, General Chair
Y. Iimura, Program Chair
9:10 - 9:50

Prince Hall

Keynote Address
Co-Chairs:

Y. Iimura, Program Chair
Y. Shimodaira, General Chair

Keynote Address
9:10

Multispectral Imaging -Present andPromise-Y. Miyake
Chiba Univ., Japan
Multispectral imaging is one of the hottest topics in the field of color
science and technology. XYZ, RGB and CMY values have been used
for recording and display of imaging systems. Those values, however,depend on the spectral characteristics of imaging devices and thespectral power distribution of the illumination. Therefore, it is importantto record and reproduce the reflectance spectra of the object for true
device independent color reproduction and high accurate recording of
the scene. In this presentation, I introduce the fundamentals and theoryof Multispectral imaging for high accurate color recording andreproduction of the object. I also introduce some applications ofMultispectral imaging to digital archives, medical imaging andidentification.
----- Break -----

20

Wednesday

December 6

10:00 - 11:20

Prince Hall

Invited Address
Co-Chairs:

T. Miyashita, Program Vice-Chair
M. Uchidoi, Program Vice-Chair

Invited Address - 1
10:00

Innovation in Digital AV Products and Key
Technologies

K. Okamura, H. Oka
Matsushita Elec. Ind., Japan
Displays and video content have been developed while influencing eachother. Rapid growth of large screen displays in recent years has broughta new challenge for the video content. In this paper, the current trend
and the relationship of displays and video contents are described at
first. Then the key technologies and future prospects of thesetechnologies are introduced.
Invited Address - 2
10:40

GxL Laser Dream Theater at the Aichi Expo
(Equivalent to 2005-in. TV)

N. EguchiSony, JapanAt the 2005 World Exposition in Aichi, Japan, Sony presented “Laser
Dream Theater”, where high-quality images were projected with lasers
onto one of world’s largest screens. The ultra-wide, 2005-inch screen.
GxL (“G-by-L”) system is the projection system that combines highoutput laser technologies and cutting-edge micro-electromechanicalsystems (MEMS). By using red, green and blue (RGB) lasers, it is able
to exceed twice the vividness of color produced in cathode-lay tube
(CRT) televisions.

IDW ’07
The 14th International Display Workshops
December 5-7, 2007
Sapporo, Japan21

Wednesday

December 6

Workshop on
LC Science and Technologies
Wednesday, December 6
13:20 - 14:30

Ohmi 1LCT1: New Materials
Chair:
Co-Chair:V. G. Chigrinov, Hong Kong Univ. of S&T, Hong Kong
H. Seki, Hachinohe Inst. of Tech., Japan

LCT1 - 1:
13:20

Invited Bimesogenic LCs: New Materials for High
Performance Flexoelectric and Blue Phase Displays
H. J. Coles
Univ. of Cambridge, UK

New bimesogenic N* liquid crystals with high flexoelectro-optic
coefficients, e/K≈1.5 CN-1 m-1, high switching angles, > 160°, µs.
response times, gray scale capability, in both ULH and USH textures, an
optimum optical in plane switch of 45°, for E= 4Vµm-1, high opticalcontrast >1000:1 with a unique optically isotropic “field off” black state,using “in plane” electric fields are described as are wide temperature
range (>50°C) highly reflective RGB electrically switchable, in ms, Blue
Phase devices and lasers.
LCT1 - 2:
13:45

Invited Carrier Transport Properties of Liquid
Crystalline Oligothiophene Semiconductors andTheir Device Applications
M. Funahashi, F. Zhang, N. Tamaoki
Nat. Inst. Advanced Ind. S&T, Japan

Asymmetrically substituted oligothiophene derivatives were synthesized
and around room temperature, they exhibited highly ordered smectic
phases in which fast electronic carrier transport. In particular highelectron mobility exceeding over 0.2 cm2/Vs was observed in propyl(4pentylphenyl)terthiophene. This compound was applied to thin filmtransistors fabricated with solution process. In addition to smectic
phases, electronic charge carrier transport was also observed in thecholesteric phase of phenylquarterthiophene derivatives with extended
p-conjugated system which emitted circularly polarized light by UV light
excitation.

22

Wednesday
LCT1 - 3
14:10

December 6
Towards Faster LCs at Lower Driving Voltage
P. Kilickiran, T. Roberts, N. Hollfelder, B. Schueller,
A. Masutani, G. Nelles, A. Yasuda
Sony Deutschland GmbH, Germany

Response times and switching voltages of liquid crystals are improvedby addition of small amounts of non-planar diaromatic-ethers. The
amount of changes in rotational viscosity and dielectric anisotropy ofliquid crystals upon addition of diaromatic-ethers are reflected as
reduction in the response times and the switching voltages. With
negative type liquid crystals no detrimental change in the liquid crystalalignment was observed, contrast ratios and brightness remained
unaffected. Voltage holding ratios of all mixtures remained same aswithout dopant.
----- Break -----

15:00 - 16:25

Ohmi 1

LCT2: LC Alignment (1)Chair:
Co-Chair:
LCT2 - 1:
15:00

I. Hirosawa, Japan Synchrotron Radiation Res. Inst.,
Japan
M. Funahashi, Nat. Inst. Advanced Ind. S&T, Japan
Invited Medical Display by Using Plasma Beam
Alignment Technology
C.-Y. Lee, H.-C. Tang, P.-H. Su*, S.-H. Yang*, Y.-J. Chen*,
Y.-J. Shih, C.-H. Su, C.-H. Liu, C.-W. Chen, C.-H. Lin,
C.-D. Lee
ITRI, Taiwan*Chi Mei OptoElect., Taiwan

In this study, the alignment-layer polyimide was treated with a plasma
beam in order to realize its full potential. Furthermore, to evaluate thealignment process, a test cell and real panel (TFT + CF) samplestructures were fabricated. A brilliant performance, including highcontrast ratio and excellent viewing angle were obtained. In addition,
this work also developed a successful 20.8 inch QXGA Grayscale
Medical Display from a G3 size panel using the plasma beam alignment
technique.

23

Wednesday
LCT2 - 2
15:25

December 6
Multi-Step Ion-Beam Alignment Process for IPS
LCDs with Polyimide Film
Y. Sasaki, T. Suzuki, J. Matsushima, M. Sugimoto,H. Tanaka*, C. Mizoguchi*
NEC LCD Tech., Japan*NEC Kagoshima, Japan

We investigated a multi-step ion-beam alignment process for IPS LCDs.
The multi-step process consists of the first step to induce anisotropy bya high energy ion-beam and the second step to control surface
conditions by a low energy ion-beam. As a result, we achieved about
7% higher contrast ratio than the best by the conventional ion-beamprocess.
LCT2 - 3
15:45

Azo-Dye Photo-Aligning for LC Devices
V. G. Chigrinov, H. S. Kwok, H. Takada*, H. Takatsu*
Hong Kong Univ. of S&T, Hong Kong
*Dainippon Ink & Chems., Japan

Liquid crystal (LC) photo-alignment using azo-dyes is reviewed. It will
be shown that this photo-aligning method can provide a controllable
pretilt angle and strong anchoring energy of the liquid crystal cell, as
well as high thermal and UV stability. The application of this method tothe alignment and fabrication of various types of liquid crystal devices
for display and photonics applications is also discussed.
LCT2 - 4
16:05

Alignment Structures of Cholesteric LC Induced by
Stretched Polymer Filaments
H. Fujikake, H. Sato, H. Kikuchi, T. Kurita
NHK, Japan

We observed cholesteric liquid crystal alignment induced by a stretchedpolymer filament. The molecular alignment of the cellulose filament
surface anchors liquid crystal molecules in the stretching direction.
When the polymer filament was fixed in a cholesteric liquid crystal cell,
helical axis of liquid crystal alignment near the filament was controlled
to be perpendicular to the filament direction. The polymer filament can
induce cylindrical-symmetry helical alignment.
----- Break -----

24

Wednesday

December 6

16:40 - 18:05

Ohmi 1

LCT3: LC Alignment (2)Chair:
Co-Chair:
LCT3 - 1:
16:40

H. J. Coles, Univ. of Cambridge, UK
M. Kimura, JSR, Japan
Invited Application of Vapor Deposition
Polymerization to LCDs -Synthesis of Polymer Films
in VacuumY. Takahashi
So-ken, Japan

Vapor Deposition Polymerization (VDP) developed by the author andcoworkers in 1984 is a technology to form films of polymers such aspolyimide using a dry process. VDP polymer films have been analyzed
and the mechanisms of film formation have been clarified. This reportsummarizes research and development results achieved to date. The
process of VDP is described first for the basic knowledge, and then its
LCDs applications are summarized.
LCT3 - 2
17:05

Recent Progress in New Alignment Layers and Its
Applications
F. S. Y. Yeung, Y. W. Li, H. L. Cheung, K. K. Li,
H. S. Kwok
Hong Kong Univ. of S&T, Hong Kong

Variable pretilt angles can be obtained by a new alignment layer
consisting of a mixture of polyimides. This process does not involve any
untested new materials and it is compatible with existing manufacturing
techniques. Recent progress of this new alignment layer will be
discussed. Fast response color-filterless No-Bias-Bend (NBB) andOptically Compensated Bend (OCB) liquid crystal displays have been
fabricated by using this high pretilt angles alignment layers.
LCT3 - 3
17:25

Multi-Domain Alignment Transflective LCD with InkJet Printed Polyimide
Y. A. Sha, P. J. Su, C. H. Hsieh, K. H. Chang,
C. C. Hsiao, J. W. Shiu, S. Y. Fuh, W. Y. Cheng,
Y. C. Liao, J. C. Yang, K. L. Lo, D. W. Lee, K. C. Lee,Y. P. Chang
ITRI, Taiwan

By using the ink jet printing technology, we fabricated a transflective
liquid crystal display with the hybrid alignment in the reflective region
and the homogeneous alignment in the transmission region. Comparedwith the traditional technologies, our technology provided theadvantages of easy process, high yield, fast throughput, and lessmaterial usage. We also applied this technology to the 2.4 inch
prototype. This panel could be implemented in the handheld productapplications.

25

Wednesday
LCT3 - 4
17:45

December 6
Molecular Orientation of Rubbed Polyimide Film
Studied by Grazing-Incidence X-Ray Diffraction
I. Hirosawa, T. Koganezawa, T. Sakai*
Japan Synchrotron Radiation Res. Inst., Japan*Nissan Chem. Ind., Japan

We investigated effect of rubbing on polyimide (PMDA-ODA) film toalign liquid crystal by grazing incidence X-ray diffraction and reflection
ellipsometry. It was not only rubbing aligned polymer chains near to film
surface in rubbing direction, but also polymer chains were elongated.
Coherency (crystallinity) of polymide was also increased by rubbing.
However, there was no apparent dependence of in-plane distribution ofpolymer chain on rubbing condition.

Author Interviews
18:00 – 19:00

13:20 - 16:20

Ohmi 5-7

Poster LCTp1: New Materials
LCTp1 - 1

Synthesis of Novel Dichroic Dyes and Study on the
Relationship between Molecular Structure andProperty of Azo-Dye
K.-L. Cheng, S.-H. Liu, Y.-C. Lin, L.-L. Lai*
ITRI, Taiwan*Nat. Chi Nan Univ., Taiwan

A series of novel N,N-disubstituted- 4-[(4-aminophenyl)diazenyl]benzylidene-4’-alkyl anilines dichroic dyes were synthesized via thereactions of the specific benzaldehyde with alkylanilines. These azo
dyes exhibited a nematic and SmC phases during the thermal process.
In addition, the order parameter and miscibility were studied byinvestigating a leading sample. The Genetic QSPR (Quantitative
Structure- Property Relationship) study assisted to explore how thestructures and order parameter values of dichroic dyes are associated.
LCTp1 - 2

Carbon Nanotube-Doped Twisted Nematic LC Cells
C. Y. Huang, H. C. Pan, C. T. Hsieh
Nat. Changhua Univ. of Education, Taiwan

We investigated the electrooptical properties of CNT-doped LC cells. A
tiny CNT dopant increases the threshold voltage and decreases the falltime of cells due to the increase in the elastic constant of LC-CNT
dispersion. At a higher CNT concentration, the increase in the dielectricanisotropy of LC-CNT dispersion decreases the rise time and thresholdvoltage of the cell. We also found that the hysteresis reduction in CNTdoped LC cells is not completely attributed to the ion trapping by CNTs.

26

Wednesday

December 6

13:20 - 16:20

Ohmi 5-7

Poster LCTp2: LC Alignment
LCTp2 - 1

Pretilt Angle Dependence on Rubbing Conditions
M. Honma, T. Nose
Akita Prefectural Univ., Japan

The pretilt angle on polyimide films, which are rubbed using a tiny metalball, is evaluated. The relationship between the pretilt angle andfrictional work is investigated under the various rubbing conditions. We
propose that the averaged frictional work can be expressed as the sumof two frictional work components contributing to an elastic and a plastic
deformations. It is clarified that the contribution by the plastic
deformation is the most important factor for controlling the pretilt angle.
LCTp2 - 2

Gray Scale Generation and Stabilization in PhotoAligned Ferroelectric LC
X. Li, A. Murauski, A. Muravsky, P. Xu, H. L. Cheung,
E. Pozhidaev*, V. Chigrinov
Hong Kong Univ. of S&T, Hong Kong*
Lebedev’s Physical Inst., Russia

Intrinsic gray scales generation and stabilization in photo-aligned
ferroelectric liquid crystal display (FLCD) have been proposed. The
frequency dependence of the FLC hysteresis loop is discussed forsteady bistable switching under passive addressing. The dependenceof transmission on the amplitude of switching pulse is discussed for thecriterion of memorized gray scale generation and stabilization. Basedon this, passive 160X160 multiplex addressing photo-aligned 5µm
reflective FLCD with high contrast and four memorized gray scale levels
is developed and demonstrated.
LCTp2 - 3

Alignment of Ferroelectric LC on SiO2 Films by
Oblique Ion-Beam Deposition
A. Murauski, X. Li, V. Chigrinov, A. Khokhlov*,
E. Khokhlov*
Hong Kong Univ. of S&T, Hong Kong*IZOVAC, Belarus

Investigation of alignment properties of SiO2 thin films produced byoblique ion beam deposition on substrate surface is presented. Suitableuniform alignment properties of the ferroelectric liquid crystals can bereceived on the alignment layer prepared by this method. Large
deposition angle from 80° to 70° can be used for thin SiO2 layer
deposition (from 10 to 20 nm). Linear design of the ion beam sputtering
source gives a possibility to work with large size substrates.

27

Wednesday
LCTp2 - 4

December 6
The Surface Morphology of Plasma Beam Treated
Polymer Films for LC Alignment
S.-S. Lin*’**, C.-D. Lee*, Y.-D. Lee**
ITRI, Taiwan**
Nat. Tsing Hua Univ., Taiwan*

The surface morphology of the plasma-treated polymer films was
examined by using atomic force microscopy (AFM). It shows that the
microgrooves are aligned periodically in the scan direction of theplasma beam. The microgrooves become more pronounced as thenumber of scans increases. The depth of the microgrooves and theazimuthal anchoring energy also increase with the number of theplasma beam scans.
LCTp2 - 5

Azo-Dyes as Photo-Alignment Agents for
Polymerizable LCs
O. Yaroshchuk*’**, J. Ho*, V. Chigrinov*, H. S. Kwok*
Hong Kong Univ. of S&T, Hong Kong**NASU, Ukraine*

We show that sulfuric bisazodyes, earlier distinguished as highly
effective photoalignment materials for conventional liquid crystals (LC),exhibit excellent photoalignment of polymerizable liquid crystals (PLC).
These dyes excel in high affinity to various substrates, extremely low
exposure dose (less than 50 mJ/cm2) for PLC alignment, andinsolubility in LC and their solutions. The alignment can be easily
patterned using minimal number of masks and exposure steps. We
emphasize potential of new photoalignment materials for the productionof patterned optical films requested by modern LCD technologies.
LCTp2 - 6

In-Plane Switching Mode LCD Using Ion Beam
S. P. Lee, J. H. Seo, T. H. Yoon, J. C. Kim
Pusan Nat. Univ., Korea

In general, ion-beam alignment based liquid crystal displays has arelatively lower anchoring energy than rubbed polyimide alignment
based LCDs [1]. We investigated the effects of lower anchoringenergies on in-plane-switching mode LCD by means of computer
simulation, the LC cell was fabricated and its electro-optics properties
were studied.

28

Wednesday

December 6

LCTp2 - 7

Withdrawn

LCTp2 - 8

Direction-Selective Polyimidization for LC Alignment
J.-H. Seo, S. P. Lee, P. K. Son, T.-H. Yoon, J. C. Kim
Pusan Nat. Univ., Korea

In this paper we investigated direction-selective polyimidization (DSP)
method by means of ion- beam treatment and its alignment propertiesof nematic LC. The characteristics of the DSP were observed by photoelastic modulator (PEM). The degree of its direction is proportional tothat of the phase retardation, which can be changed according to theexperiment conditions. Nematic LC is homogeneously aligned along thedirection of the polyimidization and its degree of the homogeneity is
proportional to the degree of DSP.
LCTp2 - 9Interplay between Elastic Constant Ratio K33/K11,
Stripe Width Area Ratio and Alignment of a NematicLC
T. N. Oo, M. Kimura, T. Akahane
Nagaoka Univ. of Tech., Japan

We have theoretically analyzed and experimentally investigatedalignment properties of a nematic liquid crystal (LC) in contact with amicropatterned polyimide surface. The patterns were formed by stripesof alternating planar and homeotropic anchorings. To understand the
director configuration inside a micropatterned LC cell, two-dimensional
finite-element modeling was performed. In this study, we will discuss theinfluence of elastic constant ratio K33/ K11 and stripe width area ratio on
the micropatterned alignment of a nematic liquid crystal.

29

Wednesday
LCTp2 - 10L

December 6
Vertical Alignment of Liquid Crystal on SiOC Film
Surfaces by the Low-Energy Ion Beam Exposure
S. S. Cha, P. K. Son, J. H. Park, J. H. Lee, J. C. Kim,
T.-H. Yoon, S. J. Rho*, B. K. Jeon*, J. S. Kim*, S. K. Lim*
Pusan Nat. Univ., Korea*LCD Business, Samsung Elect., Korea

In this paper we demonstrate the vertical alignment of LC(liquid crystal)on SiOC film surface by the low-energy ion beam exposure. LC can bealigned vertically (pretilt angle: 80°C-89°C) by the rotational obliqueevaporation of oxygen-doped amorphous SiOC films at the room
temperature. We found that in-plane order parameter of a LC layeraligned on SiOC films is lower than that of a LC layer aligned on thepolyimide layers and SiOx films.
LCTp2 - 11L

The Studies of Effect of Washing on Polyimide Film
Using Synchrotron Radiation Grazing Incidence Xray Diffraction
T. Koganezawa, I. Hirosawa, I. Sakai*
Japan Synchrotron Radiation Res. Inst., Japan*Nissan Chem. Ind., Japan

We investigated effect of washing on rubbed polyimide (PMDA-ODA)
film by reflection ellipsometry, X-Ray reflectivity and grazing incidence
X-ray diffraction (GIXD). By acetone washing, optical anisotropy
become smaller than non-washing film, however, a thickness ofpolyimide layer and crystallized volume were increased.
LCTp2 - 12L

The Stability Improvement of LC Alignment by Low
Temperature Hydrogen Passivation Process
J. B. Kim, K. C. Kim, H. J. Ahn, B. H. Hwang, D. C. Hyun,
H. K. Baik
Yonsei Univ., Korea

The stability of liquid crystal alignment property is important for theimage quality of liquid crystal display (LCD). Although the ion beamirradiation process is the options for conventional alignment processwith many advantages, it suffers from the stability of alignment layer. To
overcome this problem, we developed the hydrogen passivation
process at low temperature and got the improvement of stability of liquid
crystal alignement.

30

Wednesday

December 6

13:20 - 16:20

Ohmi 5-7

Poster LCTp3: LCD Modes
LCTp3 - 1

Color Sequential Display Based on Stacked Bistable
Ferroelectric LCD
P. Xu, X. Li, W. S. Chang, C. S. Chong, K. Y. Wong,
V. Chigrinov
Hong Kong Univ. of S&T, Hong Kong

A new color sequential display based on stacked bistable ferroelectricliquid crystal (FLC) has been proposed. The optimized parameters forthe new structure including the orientation of the polarizers andferroelectric liquid crystal cells, the cell gap of the cells have beenfound. The optical performance and color coordinates of the output of
the system have been examined in simulation. The results show thatbistable FLC has a good potential in color sequential display
applications.
LCTp3 - 2

Transflective Single Cell Gap Twisted Nematic LCD
Using a Patterned Polarizer and a Twisted LC
RetarderH. Y. Mak, V. G. Chigrinov
Hong Kong Univ. of S&T, Hong Kong

A single cell gap Twisted Nematic (TN) liquid crystal display (LCD) is
optimized for transflective LCDs, using MOUSE-LCD software. This TN
LCD uses a single cell gap approach with patterned and twisted LC
retarder for enhancing the optical performance. The display exhibitshigh contrast ratio, wide viewing angle and achromatic switching in boththe transmissive mode and reflective mode. It also possesses perfectdark state. This TN LCD configuration is easy to fabricate and suitablefor high quality transflective TFT-LCDs.
LCTp3 - 3

Multi-Domain Vertical Alignment LCD by Using InkJet Printing Technology
Y. A. Sha, K. H. Chang, P. J. Su, C. H. Hsieh,
C. C. Hsiao, J. W. Shiu, S. Y. Fuh, W. Y. Cheng,
Y. C. Liao, J. C. Yang, K. L. Lo, D. W. Lee, K. C. Lee,Y. P. Chang
ITRI, Taiwan

By using the ink jet printing technology, a novel method to fabricate amulti-domain vertical alignment liquid crystal display was developed.
Depending on the ink jet printing technology, the location of alignment
materials with different alignment properties could be defined.
Combining with the homeotropic aligned region and the hybrid aligned
region in one pixel, the reorientation of liquid crystal in the on-state
could be controlled and thus creating multi-domain vertical alignment
effect, and enhancing wide viewing angle characteristic.

31

Wednesday
LCTp3 - 4

December 6
A Single-Cell-Gap Transflective Hybrid LCD
C. C. Hsiao, Y. A. Sha, P. J. Su, C. H. Hsieh,
K. H. Chang, J. W. Shiu, S. Y. Fuh, W. Y. Cheng,
Y. C. Liao, J. C. Yang, K. L. Lo, D. W. Lee, K. C. Lee,Y. P. Chang
ITRI, Taiwan

The novel hybrid transflective LCD is provided by combining plastic
color filter and glass TFT backplane. Photo spacers on glass TFT
backplane is used to maintain the cell gap uniformity. Based on themodification of color filter and cell fabrication process procedure, thetotal pixel misalignment is below 12 micro meters and the cell gap
variation is improved. These proposed methods provide valuable
manufacturing process for portable LCDs applications and further
accelerate the improvement of manufacturing process for flexible LCDs.
LCTp3 - 5

Consideration of Optical Design in the Dual-Mode
Transflective LCDs
C. H. Hsieh, Y. A. Sha, P. J. Su, K. H. Chang,
C. C. Hsiao, J. W. Shiu, S. Y. Fuh, W. Y. Cheng,
Y. C. Liao, J. C. Yang, K. L. Lo, D. W. Lee, K. C. Lee,Y. P. Chang
ITRI, Taiwan

In this paper, we propose an optical design for dual-mode transflective
LCDs. The design can increase the optical transmittance and reflectivityof dual-mode transflective LCDs by modifying the parameters, e.g., cellgap, alignment layer and optical films. The simulation results revealed
that the transmissive and reflective regions in the transflective LCDs
have similar performance.
LCTp3 - 6

Optical Switching in a Plane of LC Layer
A. Maksimochkin*’***, S. Pasechnik*, V. Tsvetkov*,
D. Yakovlev**, G. Maksimochkin*, V. Chigrinov****Moscow State Univ. of Instr. Eng. & Computer Sci.,
Russia**Saratov State Univ., Russia***
Hong Kong Univ. of S&T, Hong Kong

Experimental method and a set-up to control light beams in thin liquid
crystal (LC) layer were developed. The topic of our work is the switchingof light by reflection and refraction of light beams propagating in a planeof LC layer from the boundaries, which separates the regions of LC cellwith different director orientations and refractive indices. This boundary
can be produced by electric field applied to the part of LC layer with ahomogeneous planar orientation. Also, we studied experimentally awaveguide formed between two transition orientation areas and effect oflight defocusing. We propose some ways for optimization of switchingparameters, and a possibility of deflection of light beam from the initial
direction. Further experimental study and theoretical modeling of lightbeams propagation in thin anisotropic LC layer with orientational
inhomogeneity is under way.
32

Wednesday
LCTp3 - 7

December 6
Optimization of Viewing-Angle Optical Properties in
OCB-LCD Compensated with Hybrid-Aligned
Discotic LC Films and C-Plates
I. Fukuda, T. Nakata, Y. Sakamoto, T. Ishinabe*,T. Uchida*
Kanazawa Inst. of Tech., Japan*Tohoku Univ., Japan

We investigated the relationships between the viewing-angle opticalproperties and the device parameters in an OCB-LCD compensatedwith hybrid aligned discotic liquid-crystal films and C-plates. We verified
that the polar angle dependence of the sum of the retardation of the LC
layer and the compensation films, Rettotal, is a useful guideline for
optimizing the design parameters, and that a wide viewing angle could
be achieved by optimizing all design parameters of the compensation
films.
LCTp3 - 8

High Transmittance MVA-LCD with Small Color Shift
C. H. Lin, K. Y. Huang, H. Y. Lin
TPO Displays, Taiwan

A new pixel structure is developed for improving the color shift of thehigh transmittance multi-domain vertical-alignment liquid crystal display(MVA-LCD). According to this structure, low color shift of a hightransmittance MVA-LCD at large viewing angle was demonstrated
without sacrificing viewing angle and contrast ratio. Potential application
for mobile display is emphasized.
LCTp3 - 9

A Novel Design of the Slit Pattern on the Patterned
Vertical Alignment (PVA) ModeJ. H. Son, S. W. Choi, W. R. Lee, K. M. Kim, Y. H. Choi,
J. S. Yang, J. J. Lju*, K. H. Kim*, G. D. Lee
Dong-A Univ., Korea*
Samsung Elec., Korea

We studied the liquid crystal (LC) dynamic stability of the defect aroundthe slit edge (wing pattern) in the patterned vertical alignment (PVA)
cell. LC dynamics is very unstable near the edge of the slit because
there is a strong competition of strain energy of LC director around
active area and edge on the wing pattern, so that we can easily findunstable defect line on the slit. It is possible to control LC dynamics near
the edge of the slit by using different wing shape. In this paper we
propose an advanced wing shape which includes defect trap for sticking
the defect moving to the out of the active area. This shape prevent thegeneration of the defect core on the slit in the active area even if weincrease the operation voltage, so that LC dynamics around the wing
pattern can be very stable. This result indicates that advanced wing
shape increase the transmittance and response time.

33

Wednesday
LCTp3 - 10

December 6
Optical Design of Wide-Viewing-Angle Transflective
OCB-LCD
I.-A. Yao, H.-L. Ke*, C.-L. Yang, C.-J. Chen, J.-P. Pang,
T.-J. Chen*, J.-J. Wu*
InnoLux Display, Taiwan*
Nat. Taipei Univ. of Tech., Taiwan

A novel transflective display with wide viewing angle and fast responsetime has been designed by associating with an optically-compensatedbend (OCB) liquid crystal mode. By optimizing the parameters ofcompensation films and a liquid crystal cell, the normalized voltage
dependences of transmittance and reflectance curves overlap
completely, which means the single driving method can be applied.
Moreover, it shows wide viewing angle characteristic in bothtransmissive and reflective areas and these results are verified by using
the Poincare sphere analysis.
LCTp3 - 11

A Novel Pixel with Small Color Shift for Fringe Field
Switching Mode LCD
Y.-C. Lin, C.-Y. Wang, C.-Y. Chi, C.-J. Chen, C.-L. Yang,
J.-P. Pang
InnoLux Display, Taiwan

In this article, we will demonstrate a novel pixel for FFS mode LCD witha shape of string (String FFS). With designed pixel pattern, String FFS
has better color performance at off-axis angle while maintaining thesame viewing cone and contrast as original FFS. We have achieved theString FFS with response time of 16ms, viewing angle U/D/L/R 88°/88°/
88°/88°, low color shift of △ u’v’ less than 0.02, and D-value of gamma
curves less than 0.12 at all viewing angle.
LCTp3 - 12

A Method to Characterize the Hybrid-Aligned
Discotic LC Compensation Film for TN-LCDs
R.-B. Li, W.-C. Chen, S.-Y. Chien, K.-H. Yang
HannStar Display, Taiwan

We have developed a theoretical model to fit the total phase differenceof a hybrid-aligned discotic LC film fabricated on a TAC substrate as afunction of incident angles to the experimentally measured results.
Such model allows us to calculate the pretilt angle and the birefringenceof each discotic LC layer within the hybrid-aligned discotic LC film.

34

Wednesday
LCTp3 - 13

December 6
A Fringe-Field Driven Hybrid Aligned Nematic LCD
for Narrow Viewing-Angle Displays
J. W. Ryu, J. Y. Lee, Y. J. Lim, M.-H. Lee, S. H. Lee
Chonbuk Nat. Univ., Korea

Liquid crystal displays (LCDs) that exhibits a high image quality only atnormal direction have been investigated. For this purpose, a hybridaligned nematic LC cell driven by a fringe field was chosen and its
electro-optic characteristics with optimal cell structure were evaluated.
The device exhibits a high transmittance of 90%, low driving voltage
and narrow viewing angle less than 20° in terms of CR 2:1 alonghorizontal direction, which is highly effective for private display
application.
LCTp3 - 14

Viewing Angle Switching of Vertical Aligned LCD
E. Jeong, M. O. Choi, Y. J. Lim, G.-D. Lee*, S. H. Lee
Chonbuk Nat. Univ., Korea*Dong-A Univ., Korea

New display technology to control the viewing angle has beendeveloped. Conventional Vertical Aligned (VA) mode offers theadvantages of a high contrast ratio in the front and simple opticalconfiguration. Conversely Vertical Aligned (VA) mode with nocompensation film showed very poor viewing angle performance. But
Vertical Aligned (VA)-LCDs with the negative C- plate and Positive Aplate showed excellent viewing angle performance. So we replaced
Positive A- plate by a Homogeneous liquid crystal layer. As of a result,
Vertical Aligned (VA) mode with nonbiased homogeneous layer showedwide viewing angle and Vertical Aligned (VA) mode with biased
homogeneous layer realized Narrow viewing angle.
LCTp3 - 15

Wide-Viewing-Angle Single-Cell-Gap Transflective
LCD on PVA Mode
W. K. Choi, Y. H. Wu, M. L. Lee, K. H. Chen, Y. F. Luo
Nat. Taiwan Univ., Taiwan

In this paper, we propose a new design for achieving a single-cell-gap
Transflective TFT-LCD (TR-LCD) that is based on PVA (Patterned
Vertically-Aligned) LC mode. By modifying the PVA electrode design
and, in particular, by introducing a new “half-electrode” design in thereflective region, the R-V and T-V curves of a single-cell-gap PVA TRLCD can become more matched and hence result in improved optical
efficiency.

35

Wednesday
LCTp3 - 16

December 6
Single-Cell-Gap Transflective TFT-LCD Using Partial
Switching
W.-K. Choi, R.-C. Lee, C.-C. Tasi, S.-T. Wu*
Nat. Taiwan Univ., Taiwan*Univ. of Central Florida, USA

In this paper, we propose a new design for achieving a single-cell-gap
Transflective TFT-LCD. Narrow striped electrode is used in the reflective(R) region such that the electric fields generated there are dominated byfringing fields. This results in reduction in LC switching angle in the R
region and hence much better matched R-V and T-V curves with optical
efficiency of ≥ 90% at the same applied voltage.
LCTp3 - 17

Analysis of Transmittance Unbalance at Low Gray
Level in Two-Domain Fringe-Field Switching (FFS)
Mode
O. S. Son, J. B. Park, S. H. Park, E. J. Park, I. C. Park,
H. Y. Kim, J. Y. Lee
BOE_CTO_CRI, Korea

We have investigated the transmittance difference between upper andbottom domain at low gray level in 2-domains fringe-field switching(FFS) mode structure. Also we found out total deviation angle of rubbed
liquid crystal (LC) from measurement and simulation. And, polarizing
optical microscope (POM) texture also confirms LC deviation angle. As
LC director in bottom domain is rotated to ideal alignment direction at
low voltage, the transmittance decreases.
LCTp3 - 18

Influence of Cell Design with Homogeneous LC
Alignment on L0 GrayJ. B. Park, S. H. Park, E. J. Park, I. C. Park, H. Y. Kim,
J. Y. Lee
BOE_CTO_CRI, Korea

In this paper, we investigated L0 influenced by cell gap (d) andbirefringence (∆n) using simulation and experimental results. Basically,
the less cell retardation, the less L0 and L255. In normal rubbing area,
the more cell gap increases, the more L0. In abnormal rubbing area, themore ∆n increases regardless of cell gap, the more L0.

36

Wednesday
LCTp3 - 19

December 6
Novel Patterned Vertical Alignment LCD for Mobile
Application with Excellent Optical Performance andReliability
J. H. Kim, Y. S. Yeo, W. S. Park, S. K. Lee, S. H. Ahn,
C. W. Kim
Samsung Elec., Korea

We developed a novel Patterned Vertical Alignment (PVA) LCD for
mobile application with excellent optical performance and cost
efficiency by optimizing the design rule, fabrication process andmaterials such as LC and polarizer. Our new design rule and process
architecture enabled an increase of 36% aperture ratio (A/R) and better
electro-optical performance compared with those of the conventional
PVA design.
LCTp3 - 20

Improved Performance of Homogeneous Mode
Transflective LCDs with Low Driving Voltage andWide Viewing Angles
Y. Sakurai, T. Ohnishi, Y. Sakamoto, I. Fukuda
Kanazawa Inst. of Tech., Japan

We studied the feasibility of enhancing the performance of our recently
proposed homogeneous-mode transflective liquid-crystal displays(LCDs) with low driving voltage and wide viewing angles. We further
reduced the power consumption of the LCD by raising the off-statevoltage from 0V to a threshold voltage of approximately 0.5V, which did
not affect the display characteristics. We also realized considerably
improvement in the optical properties of the viewing angle in thetransmissive part by incorporating a two-domain structure.
LCTp3 - 21

Improvement of Diffraction Efficiency in High
Temperature Region for Holographic Polymer
Dispersed LC
A. Ogiwara, K. Shingai
Takamatsu Nat. College of Tech., JapanThe H-PDLC device using the liquid crystal materials consisting ofvarious Nematic-Isotropic(N-I) transition temperatures is fabricated. The
device fabrication conditions for those liquid crystal materials are
discussed to realize the high diffraction efficiency and polarization
dependence. The diffraction efficiency in high temperature region is
improved by the control of a process temperature corresponding to theN-I point of liquid crystal materials.

37

Wednesday
LCTp3 - 22

December 6
White Fluorescent LCD Using Guest-Host andScattering Modes
R. Yamaguchi, K. Moriyama, S. Sato
Akita Univ., JapanWhite fluorescent display properties in LC cells with dichroic dyes
emitting complimentary or trichromatic colors have been reported. The
fluorescent intensity was improved by using the cholesteric scatteringmode. The back scattered light of a ambient white light was added to
the white emission light and the visibility at outdoor or in a bright room
could be increased.
LCTp3 - 23

π-Bistable Twisted Nematic Device Sustained byPolymer Walls
J.-H. Shin, C. G. Jhun, J.-I. Baek, M.-C. Oh, T.-H. Yoon,
J. C. Kim
Pusan Nat. Univ., Korea

A bistable twisted nematic (BTN) liquid crystal cell can generally befabricated by adding a chrial additive to the liquid crystal materials. In
this paper, we propose a novel BTN liquid crystal mode sustained bypolymer walls without any chiral dopant. With parallel rubbed
substrates, the π twist state can be stabilized by utilizing the fluorinatedpolymer wall. Therefore, bistable characteristics can be achieved
without any chiral dopant. We demonstrate switching process between
two stable states which show permanent memory time.
LCTp3 - 24

Dual Mode Switching for Viewing-Angle Control witha Single LC Panel
J.-I. Baek, Y.-H. Kwon, J. C. Kim, T.-H. Yoon
Pusan Nat. Univ., Korea

We propose dual mode switching of liquid crys-tal (LC) by which we cancontrol the viewing-angle characteristics with a single panel. In the wideviewing-angle (WVA) mode, the dark state is con-served at off-axes,
whereas the dark state of nar-row viewing-angle (NVA) mode shows theleakage of light at off-axes. Dark states of both modes show no leakageof light at normal, which guaran-tees the high contrast ratio (CR) at thefront.

38

Wednesday
LCTp3 - 25L

December 6
Low-Cost High-Yield High-Contrast Wide-ViewingAngle MVA with the Elimination of both Protrusion
and ITO Slit Geometries
H. L. Ong, J. S. Chou, W. C. Lan*, J. H. Guo*, I. H. Chen*
Kyoritsu Optronics, Taiwan*
Prime View Int., Taiwan

We successfully fabricated low cost high contrast, high brightness, widesymmetrical viewing angle multi-domain vertical alignment (MVA) LCDs
with the elimination of both protrusion and ITO slit geometries. The
fabrication process is simple, high yield, and high reliability withcurrently the lowest fabrication cost, which is even lower than the costfor the wide-viewing angle TN/LCDs. This device is based on new pixel
designs using the amplified intrinsic fringe field controlled MVA that wasinvented recently by Ong.
LCTp3 - 26L

i-LCD Technology of AFFS Tablet for Superior
Outdoor Readability
B. H. Kim*’**, S. Choi*, J. B. Park*, S. J. Baek*,
S. J. Jang*, S. R. Lee*, H. Y. Kim*, J. Y. Lee*, J. Jang***
BOE HYDIS, Korea**
Kyunghee Univ., Korea

We have developed novel pixel design of ad-vanced fringe-fieldswitching (AFFS) mode with high transmittance and reflectance forsuperior outdoor readability. The concept of this design, so called i-LCD
is to increase aperture ratio without BM and in addition, use reflected
light by metal layer on BM-less region into transmissive compo-nent
under outdoor environment. Compared with conventional design withBM, reflectance in-creases 117% and additional 65% of reflectance isincreased with Top_Mo etch process.
LCTp3 - 27L

Controllable Viewing Angle LCD Using One LC Cell
W.-J. Shin, T. Won
Inha Univ., Korea

In this paper, we report the controllable viewing angle LCD, which uses
one LC cell. This structure is applicable to the different mode such as
PVA, MVA and so on. Electro-optical properties of these cells arecalculated with 3D FEM numerical solver, TechWiz LCD, which iscommercially available in the market.

39

Wednesday
LCTp3 - 28L

December 6
Comparison of Continuous Pinwheel Alignment(CPA) Mode with Conventional VA Mode in Terms of
Electrical Optical Properties
S. Y. Cho, C. S. Lee*, T. Y. Won
Inha Univ., Korea*
Sanayi Sys., Korea

In this paper, we report our theoretical study on the electro-opticalproperties of continuous pinwheel alignment (CPA) mode. We
performed 3D-FEM simulations and compared our simulation resultswith the performance of the conventional vertical alignment (VA) mode.
CPA mode can exhibit better performance than VA mode in terms oftransmission as well as viewing characteristics. Transmittance of CPA
mode is higher than VA mode by 81 %. In addition, viewing angle of the
CPA mode can be improved by 22%.
LCTp3 - 29L

Design of Twisted-VA Transflective LC Cell in Single
Cell-Gap
T. I. Kim*’**, G. S. Lee*, S. R. Lee*, J. C. Kim*, T.-H. Yoon**
Pusan Nat. Univ., Korea**Samsung SDI, Korea

In this paper we propose a structure for a twisted VA transflective liquid
crystal cell in single cellgap, in which different twist angles are
introduced for each part, reflective and transmissive parts. By using
patterned inner retarder, we achieved not only a good optical
performance but also single gamma.
LCTp3 - 30L

The Gamma Curve Control by Using Variation ofGray Scale Level
J.-B. Lee, T. Won
Inha Univ., Korea

In this paper we proposed a novel algorithm to achieve consistent LCD
color performance. The novel algorithm has been developed forautomated tuning and programming of LCD gamma. The method is tochange 8-bit digital values which are inputted in the serial interface
receiver to store in the data drive IC. That is, we can convert it into the
8-bit digital values to fit target gamma. For an exemplary 8-bit
resolution, the simulation verified adequacy of the proposed algorithm.
LCTp3 - 31L

Design of High Performance Viewing-AngleControllable LC Panel
K. Hiyama, R. Ogawa, T. Ishinabe, T. Uchida
Tohoku Univ., Japan

We investigated the design conditions of the view-ing-angle-controllable(VAC) liquid crystal panel by using a Poincare sphere representation.
As a result, we clarified a VAC LC panel using vertically-aligned (VA) LC
cell and negative C-plate has a high light shielding efficiency.

40

Wednesday

December 6

13:20 - 16:20

Ohmi 5-7

Poster LCTp4: Characterization
LCTp4 - 1

Determination of Surface Anchoring Energy ofVertically Aligned Nematic LC Cells Measured by
Saturation Voltage Method
Y. Sasaki, H. Ichinose*, H. Naito
Osaka Pref. Univ., Japan*Merck, JapanA new saturation voltage method is proposed for determining theanchoring energy of nematic liquid crystals (NLCs) with negative
dielectric anisotropy in vertically aligned NLC cells by measuring
capacitance of the NLC cells as a function of voltage applied to NLC
cells. To show the validity of the anchoring-energy measurement, thecapacitance-voltages characteristics of the NLC are numericallyexamined. By means of this method, the anchoring energies of eachpixel in vertically aligned NLC display can be determined.
LCTp4 - 2

Pretilt Angle Measurement Using PEM
Y. W. Li, F. S. Y. Yeung, L. Tan, J. Y. L. Ho, H. S. Kwok
Hong Kong Univ. of S&T, Hong Kong

A new method of measuring arbitrary pretilt angle for LCD using photoelastic modulator is discussed. Different from crystal rotation method, it
is able to measure pretilt angles accurately from 0 to 90 degree. No cell
gap and wavelength information is required. It is also possible todetermine two-dimensional liquid crystal cell parameter distributions atreal time.
LCTp4 - 3

Fast Inspection for Bended Flexible Display
Y.-R. Lin, S.-C. Jeng, W.-T. Hsu, C.-C. Liao, C.-C. Chen*,
Y.-H. Lien*, T.-J. Shy*
ITRI, Taiwan*
Tsing Hua Univ., Taiwan

We develop a fast inspection system for measuring the electro-opticalcharacteristics of any region of a flexible display such as resistance,
birefringence, Transmittance versus Voltage curve (T-V), response time,and spectrum under bending condition. Birefringence of plastic
substrate and resistance of conducting layer IZO (Indium Zinc Oxide)on plastic substrate in different radius curvature are investigated in thispaper.

41

Wednesday
LCTp4 - 4

December 6
Influence of Chiral Dopant and Monomer
Concentration on the Electro-Optical Characteristicsof the Reverse Mode Polymer Stabilized CholestericTexture Cell
Y. S. Chih, S. W. Ke, C. Y. Huang
Nat. Changhua Univ. of Education, Taiwan

Reverse mode polymer stabilized cholesteric texture cells with various
chiral and monomer concentrations were investigated. The electrooptical measurements indicate that the chiral dopant increases thehysteresis width and decrease the field-off response time, the monomer
decreases the hysteresis width and increases the field-off responsetime of the cell. The field-on response time is independent of themonomer and chiral concentration and the thinner cell has the smaller
hysteresis width.
LCTp4 - 5

Biphotonic Z-Scan Studies of the Nonlinear Optical
Effect in the Azo-Dye Doped LC Films
H.-C. Lin, A. Y.-G. Fuh
Nat. Cheng Kung Univ., Taiwan

The nonlinear optical effects of azo-dye-doped liquid crystals areinvestigated using biphotonic Z-scan technique. The effects measured
using the red light Z-scan can be modulated/switched with thesimultaneous application of a green light. Similar results can be using
the green light Z-scan with a red light simultaneously. In the former
case, the nonlinear properties are dominated mainly by thermal effects,
while the effects are resulted from the molecular reorientation of liquid
crystal induced by photoisomerized dyes in the latter one.
LCTp4 - 6L

Line Profile Measurement for Anisotropy of Rubbed
Polyimide Film on Actual LCD Panel
T. Tanooka, T. Kikuchi, A. Takai, K. Kaneko, Y. Horiguchi,
M. Kawata, T. Miyashita*, T. Uchida*, I. Hirosawa**
Moritex, Japan*Tohoku Univ., Japan**Japan Synchrotron Radiation Res. Inst., JapanFor display devices, the measurement for evaluations in a large area
has been demanded. We developed a method to measure line profiles
for the anisotropy of rubbed polyimide films for the LCD by using
difference Speedy Measurement by Polarization conversion (d-SMP)
method. This method has advantages of low noises and high speed. It
has the possibility to evaluate orientation defects of rubbed polyimide
films immediately after a rubbing process.

42Thursday

December 7
Thursday, December 7

9:00 - 10:20

Ohmi 1

LCT4: LCD Modes (1)Chair:
Co-Chair:K. Takatoh, Sci. Univ. of Tokyo in Yamaguchi, Japan
S. Komura, Hitachi Displays, Japan

LCT4 - 1
9:00

Flexible LCDs, The “Kent Approach”
J. West, B. Taheri*, A. Khan**Kent State Univ., USA*Alpha Micron, USA**
Kent Displays, USA

A consortium of Northeast Ohio companies and Kent State University
have taken an alternative approach to producing flexible liquid crystal
displays. We utilize liquid crystal effects that do not require polarized
light and can be addressed with a passive matrix. Unlike othercompeting technologies our approach is compatible with commerciallyavailable flexible substrates. Using this approach consortiumcompanies are producing and selling flexible displays and related
devices.
LCT4 - 2
9:20

A4-Sized LCDs with Flexible Light Guide Plate
H. Sato, H. Fujikake, Y. Fujisaki, S. Suzuki*,
D. Nakayama*, T. Furukawa**, H. Kikuchi, T. Kurita
NHK, Japan*Minebea, Japan**
Kyodo Printing, Japan

We have developed an A4-paper-sized ferroelectric liquid crystal (FLC)
display that includes a flexible backlight sheet. The flexibility of thebacklight was achieved by a combination of a side light consisting of
three-primary-color LED chips and a thin flexible-polymer light-guideplate. Colored moving images were displayed on a flexible screen bydriving with an active matrix technique using an external switchtransistor-array based on a field-sequential-color method.
LCT4 - 3
9:40

High Efficiency Optical Rewritable Device
A. Muravsky, A. Murauski, X. Li, V. Chigrinov
Hong Kong Univ. of S&T, Hong Kong

We developed new Optical Rewritable (ORW) liquid crystal technology
and utilize it to create display. ORW display carries no electrodes onboard and uses polarizer as substrates. Its simple construction securesdurability and low cost. The on screen information is changed in writing
unit that consists of LCD-mask and exposure source based on LED, lowpower and cheap solution in comparison with Hg-lamps or lasers. The
main target of Optical Rewritable device is the plastic card display
application.

43

Thursday
LCT4 - 4
10:00

December 7
Fast Horizontal Switching of Bistable Chiral Splay
Nematic LC with Patterned Electrodes
C. P. Chen, C. G. Jhun, T.-H. Yoon, J. C. Kim
Pusan Nat. Univ., Korea

Bistable chiral splay nematic (BCSN) has been added to the repertoireof LCDs as a novel bistable device. Unlike BiNem, BCSN belongs to thebulk switching bistable LCD and allows both vertical and horizontal
operation. For each operation, it requires the transition from splay stateto π twist state or vice versa. In this letter, a practical method of realizing
fast horizontal switching by using patterned electrodes is to be
proposed.
10:40 - 12:10

Ohmi 1

LCT5: LCD Modes (2)Chair:
Co-Chair:
LCT5 - 1:
10:40

J. West, Kent State Univ., USA
H. Okada, Toyama Univ., Japan
Invited Fast In-Plane Switching Mode in Vertically
Aligned Banana-Shaped LCs
H. Takezoe, Y. Shimbo, Y. Takanishi, K. Ishikawa,
E. Gorecka*, D. Pociecha*, J. Mieczkowski*, K. Gomola*
Tokyo Inst. of Tech., Japan*
Warsaw Univ., Poland

We have studied a new display mode using banana-shaped liquid
crystals. This display mode possesses all the advantages, i.e., highcontrast, wide viewing angle, fast switching and continuous gray scale,of the existing liquid crystal displays such as VA, IPS, FLC and Vshaped switching modes. The switching was interpreted based on SHG
data, which were well simulated by 2-D Langevin process.
LCT5 - 2:
11:05

Invited Peeping Prevention Technology: Control of
LCD Viewing Angle Properties
K. Takatoh, S. Kobayashi, S. Kimura*, N. Okada*,
T. Kanetsuna*, N. Hirama*, S. Kurogi*, S. Sekiguchi*,K. Uemura*Sci. Univ. of Tokyo in Yamaguchi, Japan*
Toshiba Elect. Eng., Japan

New peeping prevention technology to control the viewing angle
properties of TFT-LCDs has been developed. In this technology, an
additional LC panel in which the whole area is divided into two kinds ofsmall visible domains of different LC alignment directions is used. New
twisted nematic type of LCD with quite unique properties for the
purpose of this device has been developed. The products have been
applied to commercially available notebook computer and so on.

44Thursday
LCT5 - 3
11:30

December 7
Multi-Domain Vertically Aligned LCDs with Small
Color Shift
C.-C. Liu, Y.-P. Chang, M.-C. Tai, M.-H. Chang,
M.-T. Wang
Chunghwa Picture Tubes, Taiwan

New MVA pixel with two independent divided sub-pixels was
successfully developed to improve the off-axis image quality of liquid
crystal display. By our artful pixel circuit and structure, there is a suitable
voltage discrepancy between the transparent electrodes of those subpixels. The light-skin at a diagonal viewing angle appears natural. Itsu’v’ change is from 0.03 to 0.01. Moreover, the kickback voltage, dVp ofeach sub-pixel can be adjusted independently to improve the image
quality.
LCT5 - 4
11:50

Optimization of the Edge Disclination in FFS Mode
TFT-LCDs
Y. B. Lee, C. T. Liao, A. Chao, C. H. Yu, T. S. Jen
HannStar Display, Taiwan

In this paper, we present an optimized design of the pixel electrodestructure in FFS Mode TFT-LCDs. We simulated and evaluated various
kinds of pixel edge design. From analysis of LC texture andtransmittance we could find out a proper electrode edge structure.
Then, a novel FFS pixel structure with high transmittance was proposedand demonstrated. This pixel structure improves transmittance by 3040% compared to traditional FFS pixel. These structures reduce thedisclination area and improve the transmittance of FFS mode TFTLCDs.
----- Lunch -----

13:50 - 15:20

Ohmi 1

LCT6: LCD Modes (3)Chair:
Co-Chair:
LCT6 - 1:
13:50

H. Takezoe, Tokyo Inst. of Tech., Japan
M. Inoue, TOYO, Japan
Invited Recent Advance in Transflective LCDs
X. Zhu, J.-H. Lee, Z. Ge, Y.-H. Lin, S.-T. Wu
Univ. of Central Florida, USA

Three new transflective liquid crystal displays (LCDs) are reported inthis paper. The first one uses color sequential method for transmissivemode with an LED backlight. The second utilizes a wire-grid-polarizer inthe reflective part without any phase retardation film. The third is apolarizer-free transflective LCD based on the absorption and scattering
mechanisms of dye-doped negative LC gel.

45

Thursday
LCT6 - 2:
14:15

December 7
Invited A New Transflective IPS-LCD with HighContrast Ratio and Wide Viewing Angle Performance
O. Itou, S. Hirota, J. Tanno*, M. Morimoto*, K. Igeta*,
H. Imayama*, S. Komura*, N. Tetsuya*
Hitachi, Japan*Hitachi Displays, JapanA new transflective IPS-LCD with in-cell retarder on the reflective
display portion is designed to improve contrast ratio and viewing-angle
performance of transmissive displays. The in-cell retarder and liquid
crystal layer are designed as they make a wide band quarter-wave platecomposed by a quarter-wave plate, a half-wave plate and a polarizer.
Contrast ratio higher than 500: 1 and viewing-angle performancecomparable to transmissive IPS-LCD is obtained, and thickness of LCD
panel is reduced at same time.
LCT6 - 3
14:40

High Efficiency ECB-Mode Transflective LCD
C.-S. Cheng, C.-J. Hu, C.-M. Chang, W.-L. Liau
AU Optronics, Taiwan

For the better optimization of transflective liquid crystal displays (TRLCDs), a new design concept adopted is inevitable. We have developed
a novel TR-LCDs that utilizes a specific pixel structure and electric
controlled birefringence effect of a liquid crystal cell with normal black
operated mode under single cell gap. This display has the advantages:(1) lower power consumption than conventional TR-LCDs with normal
white operated mode. (2) it can simplify the fabrication process to obtain
the higher yield. (3) higher transmissive open ratio and higher
reflectance.
LCT6 - 4
15:00

Fast Response and High Contrast OCB Display
Using LED Backlight and Novel Driving Scheme
Y. Tanaka, H. Takahara, T. Fukami, S. Kawaguchi,
K. Nakao, A. Takimoto
Toshiba Matsushita Display Tech., JapanA newly developed OCB LCD (referred to as OCB-III) using an LED
blinking backlight is re-ported. The key technology of OCB-III is a novel
driving scheme that is made possible by combination of OCB and LED
both having fast response characteristics. We demonstrated highperformance of MPRT (4.7msec) and contrast ratio (1000:1) with 9-inch
WVGA OCB-III panel. We conclude that OCB-III is an innovativetechnology that realizes a display of CRT-quality with LC panel.
----- Break -----

46

Thursday

December 7

15:40 - 17:05

Ohmi 1

LCT7: Characterization
Chair:
Co-Chair:
LCT7 - 1:
15:40

H. Fujikake, NHK, Japan
M. Ozaki, Osaka Univ., Japan
Invited Recent Measurement of LC Material
Characteristics
M. Inoue*’**, K. Takatoh**, S. Kobayashi**
TOYO, Japan**Sci. Univ. of Tokyo in Yamaguchi, Japan*

We have developed many kinds of Liquid Crystal Measurement
Systems such as VHR, Ion Density, Residual DC and Elastic Constantsince 1990. In this paper, we summarize some results of measurements
by means of the above mentioned systems and report our new
measurement method for Liquid Crystal material characteristics.
LCT7 - 2
16:05

Towards a Better Understanding of the Reverse Flow
Effect in Multi-Domain VA-LCDs
N. Dessaud, S. J. Roosendaal, J. R. Hector*,J. R. Hughes*, D. K. G. de Boer
Philips Res. Europe, The Netherlands*
Cross Oak Lane, UK

Reverse flow is present in multi-domain VA-LCDs and can be the causeof relatively slow switching. To allow good motion portrayal, it isimportant to understand what affects this unwanted flow and therefore
optimize the LC parameters, drive schemes and pixel designs to
reduce/remove its effect. Using simple test cells and 1D simulations
allowing twist deformations a good agreement between experimental
and simulation results was found.
LCT7 - 3
16:25

Verification of the Lateral Ion Transport in MVA Mode
DisplayP. M. Liu, C. T. Chen, J. L. Tung, T. C. Lai, J. J. Su,
T. J. Chang, W. L. Liau, A. Lien
AU Optronics, Taiwan

The physical phenomenon of Line Shape Sticking caused by the lateral
ion transport in the MVA mode AMLCD is clarified. Long-term
verification of the real panels with some static test patterns under hightemperature has been done, and the phenomenon is checked at thegray levels after burning-in.

47

Thursday
LCT7 - 4L
16:45

December 7
Azimuthal Bistable Nematic Display with Dual InPlane Switching Based on Nano-Imprinting
Technology
J. S. Gwag*, M. Yoneya*’**, H. Yokoyama*’**Japan S&T Agency, Japan**Nat. Inst. of Advanced Ind. S&T, Japan*

Based on nanoimprinting lithography, a novel bistable nematic device
driven simply by dual in-plane electric fields is proposed. The bistability
is created from a composite action between two easy axes, having
mutually orthogonal directions. The azimuthal direction of the bistability
can be controlled by the appropriate combinations of two mutual
anchoring strengths. This novel bistable display has a good opticalcharacteristics as shown in the in-plane switching nematic liquid crystal
mode.

Author Interviews
18:40 – 19:40
Supporting Organizations:LC Physics and Condensed Matter Forum, JLCS
Chemistry and LC Material Forum, JLCS
Liquid Crystal Display Forum, JLCSLC Photonics and Optical Device Forum, JLCSSoft Matter Form, JLCS
Molecular Alignment Electronics Forum, JLCSTechnical Group on Information Display, ITE
Technical Committee on Electronic Information Displays, Electronics
Society, IEICEIDW Tutorial in Japanese
Tuesday, December 5
Ohmi 10 (2F)
Otsu Prince Hotel
Detail information will be available in October:
http://www.sidchapters.org/japan/wiki.cgi
Contact address:
idw.tutorial@tmdisplay.com
48

Wednesday

December 6

Workshop on Active Matrix Displays
Wednesday, December 6
13:00 - 14:25

Ohmi 2

AMD1: LC-TV
Chair:
Co-Chair:AMD1 - 1:
13:00

H. Hamada, Sanyo Elec., Japan
M. Tsumura, Future Vision, Japan
Invited Perspective on Large-Sized High-Quality
LCD-TVK. Okamoto
Sharp, JapanAs the result of the intensive effort to overcome weaknesses of the
LCDs such as viewing angle, moving picture quality and contrast ratio,
LCD-TVs are now widely accepted in the consumer market. Innovations
to resolve these weaknesses have been reviewed, and perspective on
upcoming new generation imaging era by the high-quality LCD-TVs will
be discussed.
AMD1 - 2:
13:25

Invited Advanced MVA with High CR and Wide
Viewing Angle for TV-LCDs
P.-L. Chen, Y.-P. Huang, W.-K. Huang, C.-H. Tsao,
J.-J. Su, T.-R. Chang, H.-L. Hou, Y.-C. Lin, K.-Y. Lin,
C.-W. Wang, C.-T. Liu
AU Optronics, Taiwan

No abstract was submitted.
AMD1 - 3
13:50

Low Power Consumption TFT-LCDs with 2Zinversion Pixel Structures
H. C. Liu, C. T. Liao, T. C. Chung, M. T. Lin, D. S. Lee,
S. L. Lee, T. S. Jen
HannStar Display, Taiwan

LCDs need low power consumption feature with high image quality forrecent using habit. We present a brand-new pixel structures with thesimplest driving scheme to achieve both requirements. It named 2Zinversion, which implemented 2V1H twin-dot inversion on array platewith low power column-inversion driver ICs. We design the unbalance
spacing layout to improve the horizontal Mura caused by 2Z-inversion
layout. 12inch XGA panel with around 40% power saving could beobtained as compared to tradition dot inversion driving scheme.

49

Wednesday
AMD1 - 4L
14:10

December 6
Column Line Inversion Driving for IPS-Pro LCD-TVs
K. Endo, R. Oke, K. Ono
Hitachi Displays, Japan

A column line inversion driving method was used to overcome thelimited charging capability of TFTs and temperature increase in data
driver IC. The method dramatically reduced the LCD alternating
frequency, thus reducing not only heat in the IC, but also cost. The
technology has been successfully introduced into TFT-LCDs fabricatedby IPS Technology with superior moving picture performance under 120
Hz driving.
----- Break -----

14:40 - 16:15

Ohmi 2AMD2: TFT Novel Applications
Chair:
Co-Chair:AMD2 - 1:
14:40

K. Okamoto, Sharp, Japan
K. Takatori, NEC LCD Techs., Japan
Invited A Capacitive Fingerprint Sensor with
Integrated Comparator Based on LTPS TFTs
H. Hara, M. Miyasaka, C. Iriguchi, S. W. B. Tam*,
S. Inoue, T. Shimoda
Seiko Epson, Japan*Cambridge Res. Lab. of Epson, UK

This paper introduces and discusses a low-temperature polycrystalline
silicon thin film transistor (LTPS-TFT) fingerprint sensor (FPS) based ona capacitive detection method. We have integrated a comparator circuit
as an analog-to-digital converter (ADC) on a glass substrate thatrecognizes a ridges and valleys of a fingerprint by adjusting thereference voltage. Using this method, we have succeeded in taking finefingerprint images at operating voltage of 4V. This paper also describes
minute TFT devices and circuits for further low-voltage operation.
AMD2 - 2:
15:05

Invited Flexible Braille Sheet Display with Organic
FETs and Plastic Actuators
T. Takamiya, T. Sekitani, Y. Kato, H. Kawaguchi*,T. Someya, T. Sakurai
Univ. of Tokyo, Japan*
Kobe Univ., Japan

Organic FETs (OFETs) are integrated with actuators, and a Braillesheet display is demonstrated. A newly developed back-gated OFETs
SRAM and the circuits technology for the Braille sheet display toenhance speed, yield and lifetime are presented, which will be essential
for future large-area electronics made with OFETs.

50

Wednesday
AMD2 - 3:
15:30

December 6

Invited Two Methods of Realizing Double Display
ScreenG. Hamagishi, S. Takemoto, N. Sugiyama, Y. Tanaka*,
T. Yata*, T. Washizawa*
Seiko Epson, Japan*Sanyo Epson Imaging Devices, Japan

A double display screen that simultaneously provides a different image
depending on whether one is sitting in the driver’s seat or passenger
seat has been developed as a new display for in-vehicle applications. A
barrier method like that used in 3-D displays was developed as a means
to separate the images. A method of controlling the directivity ofpolarized light was developed as a means to create even more added
value.
AMD2 - 4
15:55

TFT Nonvolatile Memory Cell Using Sequential
Lateral Solidified LTPS Process
H. T. Chen, C. Y. Tseng, Y. H. Yeh
ITRI, Taiwan

A novel nonvolatile memory cell with field enhanced trapping structure
in low temperature poly-Si TFTs have been fabricated anddemonstrated successfully on glass substrate. A program/erase windowof 2 V has been achieved with high P/E speed (1ms/10ms), good
endurance of 104 P/E cycles, while a 1.5V window remained after 104
seconds at 85°C for data retention and negligible read/write
disturbances.
----- Break -----

16:25 - 18:00

Ohmi 2

AMD3: SOG/Mobile
Chair:
Co-Chair:AMD3 - 1:
16:25

Y. Nakajima, Sony, Japan
H. Hara, Seiko Epson, Japan
Invited Narrow-frame System-On-Glass LCD with Low
Voltage Interface Circuitry
M. Murase, Y. Kida, D. Ito, M. Tonogai, Y. Takahashi,
Y. Nakajima
Sony, Japan

A system-on-grass liquid crystal display, which fully integrates a low
voltage 6-bit RGB parallel interface circuitry, has been developed byusing a pulse switching DC-DC converter and an offset-cancel level
shifter. This technology allows for lowering power supply voltage ofexternal LCD controllers. We also have developed a serial signal
processing method to reduce a width of horizontal drivers that forms thenarrowest frame width in system-on-grass displays to date.

51

Wednesday
AMD3 - 2:
16:50

December 6

Invited New High-Speed Logic Circuitry and PowerSupply System using LTPS-TFT Technology for
SOG/SOFY. Suzuki, K. Umeda*
Tokai Univ., Japan*NEC Elect., Japan

In this paper, a new high-speed logic circuitry and a new power-supply
system for SOG/SOF is introduced. The new logic circuitry can be
operated with the frequency by around 3-10 times higher than that of
the conventional circuit by using the bootstrapped technology. Also, thepower-supply system can convert +5V single power-supply voltage toabout +15V voltage. Moreover, a stable voltage can be obtained even if
the fluctuation of ambient temperature and power-supply voltage
occurred in the new power-supply system.
AMD3 - 3:
17:15

Invited The 12.1-in. Wide-Format Low-Temperature
Polysilicon (LTPS) TFT LCD for Mobile Notebook PC
Application with 0.2mmt Glass Substrate and LED
Backlight System
H. Maeda
Toshiba Matsushita Display Tech., Japan

Toshiba Matsushita Display Technology developed the world’s firstthinnest and lightest weight 12.1-inch wide-format low-temperaturepolysilicon (LTPS) TFT LCD for notebook PC applications. It use twohigh technologies, one is a new LED backlight system and the other is a
glass-etching technology that achieve the 0.2mm-thickness glass
substrates. This approach results in a module with thickness of 2.9mm(at the thinnest part) and weight of 183g, which is about half thickness
and 32% reduction of weight compared with current product.
AMD3 - 4
17:40

a-Si TFT Gate Driver Circuit Having Dual Pull-Down
Structure with Shared Node Controller
H. N. Cho, Y. H. Jang, S. Y. Yoon, B. Kim, M. D. Chun,
S. C. Choi, K. S. Park, T. Moon, H. Y. Kim, C. I. Ryoo,
N. W. Cho, S. H. Jo, C.-D. Kim, I. J. Chung
LG.Philips LCD, Korea

A novel gate driver circuit using a-Si TFTs has been developed. Shared
node controller reduced the area of circuit without performancedegradation. The AC driving method using dual pull-down TFTs relieved
the gate driver circuit from stress to TFTs. The novel gate driver circuit
has been successfully integrated with a single bank form in a 14.1” XGA(1024*RGB*768) TFT-LCD panel and shows proper operation for over
1,000hours at 60°C.

Author Interviews
18:00 – 19:00

52

Thursday

December 7
Thursday, December 7

9:00 - 10:25

Ohmi 2

AMD4/OLED4: AM-OLED
Chair:
Co-Chair:R. Hattori, Kyushu Univ., Japan
M. Inoue, TPO Displays Japan, Japan

AMD4/OLED4 - 1: Invited Current Status of, Challenges to, and
9:00
Perspective View of AM-OLED
H. N. Lee, J. W. Kyung, S. K. Kang, D. Y. Kim,
M. C. Sung, S. J. Kim, C. N. Kim, H. G. Kim, S. T. Kim
LG Elect., Korea
ZnO and IGZO TFTs were fabricated by conventional photo-lithography
and wet-etching process. ZnO and IGZO TFTs showed high mobility of
66 cm2/Vs and 157 cm2/Vs, and high on/off ratios of 7.6 x 106 and 1.1 x
107, respectively. In addition, the IGZO TFT array was successfully
fabricated to drive the OLED device on it. Therefore, it can besuggested that the oxide TFT be one of the promising candidates as a
backplane for OLED device.
AMD4/OLED4 - 2: Invited Novel Active-Matrix Panel with Organic Light9:25
Emitting Field-Effect Transistor
Y. Oku, N. Shimoji, T. Tanabe*, S. Akiyama**,T. Oyamada***, H. Uchiuzou***, C. Adachi****,
K. Matsushige*****
Rohm, Japan*Pioneer, Japan**
Mitsubishi Chem., Japan***Chitose Inst. of S&T, Japan****Kyushu Univ., Japan*****Kyoto Univ., Japan
We successfully demonstrated a novel active-matrix panel having anorganic light-emitting field-effect transistor (OLEFET) on a Si substrate.
An OLEFET, a switching transistor, and a capacitor were integrated into
each pixel. As an OLEFET material, tetraphenylpyrene (TPPy) dopedwith rubrene at 1wt% was employed. The switching transistor was
fabricated with pentacene. All organic transistors are bottom-contacttype, using conventional photolithography. An 8x8 display panel clearly
showed moving characters.

53

Thursday
AMD4/OLED4 - 3
9:50

December 7
Pulse-Width Modulation with Current
Uniformalization for TFT-OLEDs
M. Kimura, M. Kato, Y. Hara, S. Sawamura, H. Hara*,
T. Okuyama*, S. Inoue*, T. Shimoda*
Ryukoku Univ., Japan*
Seiko Epson, Japan

A novel driving concept, “pulse-width modulation with current
uniformization”, is proposed for TFT-OLEDs. An example of this driving
concept is a combination of “pulse-width modulation with self-biased
inverter” and “time-ratio grayscale with current uniformization”. Its
driving operation is confirmed using circuit simulation. It is found that
this driving method can compensate characteristic deviations anddegradations of both TFTs and OLEDs and exceedingly improveluminance uniformity. Moreover, it does not need high-speed scanningeven for high-resolution and many-grayscale displays.
AMD4/OLED4 - 4L
10:10

A New Pixel Circuit Employing Data Reflected
Negative Bias Annealing to Improve the Current
Stability of a-Si:H TFT AMOLED
S.-M. Han, H.-S. Park, J.-H. Lee, M.-K. Han
Seoul Nat. Univ., Korea

We proposed a new pixel circuit employing data reflected negative bias
annealing to improve the current stability of a-Si:H TFT AMOLED. The
proposed 5 TFTs pixel is can apply the negative VGS, which is
proportional to the previous emitting VGS of the TFT, to the driving aSi:H TFT by using its own data signal so that suppress its degradationinduced by positive gate bias effectively. The data reflected negative
bias annealing of pixel was proved by a SPICE simulations.
----- Break -----

54

Thursday

December 7

10:40 - 12:00

Ohmi 2

AMD5: Emerging TFT Technologies
Chair:
Co-Chair:AMD5 - 1:
10:40

J. Jang, Kyung Hee Univ., Korea
Y. Yamamoto, Sharp, Japan
Invited Characterization of Sputter-Deposited ZnOThin Film and Its Application to Thin-Film Transistors
M. Furuta*,**, T. Matsuda*,**, T. Hiramatsu**,****,
H. Furuta*,** T. Hirao*,**, M. Yoshida***, H. Hokari***,
H. Ishii***, M. Kakegawa****
Kochi Univ. of Tech., Japan**Kochi Ind. Promotion Center, Japan***Casio Computer, Japan****Kochi Casio, Japan

Film properties and microstructure of sputter deposited ZnO films havebeen investigated. Thermal stability of film resistivity strongly depended
on the deposition conditions of the ZnO films. Thin-film transistors with
ZnO channel have been successfully fabricated by novel top-gateprocesses. Field effect mobility of 50.3 cm2/V・sec, threshold voltage of
1.1 V, and on/off current ratio of 4.6 x 106 were achieved. A 1.46”
diagonal TFT-LCDs were first demonstrated by ZnO-TFTs.
AMD5 - 2
11:05

Pixel Controlling Substrates Using Crystalline
Silicon LSI Chips Embedded in Flexible Organic
Films
R. Ishizuka, K. Ohdaira, H. Matsumura, M. Ishikawa*
JAIST, Japan*JST Plaza Ishikawa, Japan

The purpose of this work is to fabricate pixel controlling substrates(PCS) by using LSI chips with a size of a few hundred µms instead of
conventional TFTs. A method to deposit LSI chips on flexible substrates
is extensively studied. The chips embedded in organic substrates are
wired by sputtering and vacuum evaporation of metals. The method is
one of the most feasible techniques for fabrication of highly functional
flexible displays.

55Thursday
AMD5 - 3
11:25

December 7
Joule-Heating Induced Crystallization Using a
Conductive Layer (JICCL): MillisecondCrystallization
W.-E. Hong, J.-Y. Lee, J.-S. Ro
Hongik Univ., Korea

An electric field was applied to a conductive layer to induce Joule
heating in order to generate the intense heat needed to carry out the
crystallization of amorphous silicon. Polycrystalline silicon was
produced via Joule heating through a solid state transformation.
Uniformly distributed fine grains were obtained due to enormously highheating rate of this process. Blanket crystallization was accomplishedwithin the range of millisecond, thus demonstrating the possibility of a
new crystallization route for amorphous silicon films.
AMD5 - 4L
11:45

LTPS Ambient Light Sensor with Temperature
Compensation
S. Koide, S. Fujita, T. Ito, S. Fujikawa*, T. Matsumoto
Sanyo Epson Imaging Devices, Japan*Seiko Epson, Japan

We have developed an LTPS Ambient Light Sensor with temperaturecompensation that shows promise in applications for LCD panels. The
sensor has two serial PIN diodes, the output current of which can benearly constant at any temperature under normal conditions. Also, theAmbient Light Sensor has a reflector below that enables it to detect dim
ambient light and be produced in the same process as LTPS TFT-LCDs.

Author Interviews
18:40 – 19:40

14:00 - 17:00

Ohmi 5-7

Poster AMDp: Active-Matrix Displays
AMDp - 1

Amorphous Silicon Thin-Film Transistors Made byMicro Imprint Lithography
J.-S. Choi, B.-K. Choo, N.-Y. Song, S.-H. Kim, K.-C. Park,J. Jang
Kyung Hee Univ., Korea

We made hydrogenated amorphous silicon (a-Si:H) thin film transistor(TFTs) using an ultra violet micro imprint lithography (UV-MIL). UV-MIL
a-Si:H TFTs exhibited a field-effect mobility of 1.2 cm2/V・s, thresholdvoltage of 1.9 V and on/off current ratio of 108. We investigatedthreshold voltage shift ( △ Vth) of UV-MIL a-Si:H TFTs induced by gatebias stress and bias temperature stress (BTS). We confirmed that UVMIL a-Si:H TFTs have electrical and thermal stability for application tolong term active-matrix liquid-crystal display (AMLCD).

56

Thursday

December 7

AMDp - 2

Dual-Layer Gate Dielectrics Design for Reduction of
Self Heating Effect of LTPS Devices
C. H. Fang, C. J. Shih, C. Y. Huang
Chunghwa Picture Tubes, Taiwan

The reduction of self-heating effect under high drain power of dual SiNx/
SiOx gate insulator has been investigated. We found that the dual layer
design can not only enable much better electric characteristics of LTPS
devices, but also suppress the Joule heating significantly. The
degradation of threshold voltage for PMOS devices under high draincurrent stress can be reduced up to 50%. This structure can enables
much better reliability of devices for high-level active matrix displays.
AMDp - 3

Study on Stability of a-Si TFTs Fabricated by
Catalytic Chemical Vapor Deposition (Cat-CVD)
MethodS. Nishizaki, K. Ohdaira, H. Matsumura
JAIST, Japan

This paper is to study on Vth stability in a-Si TFT fabricated by Cat-CVD
method. There appears no serious degradation in both a-Si active layer
and the boundary properties between a-Si and gate silicon nitride(SiNx). It is speculated that the main factor deciding the Vth shift of CatCVD a-Si TFT is electron traps in SiNx. To clarify the relationshipbetween Vth shift and the SiNx property, TFT performance isinvestigated for SiNx gate films prepared by various deposition
conditions.
AMDp - 4

High Performance Pentacene OTFTs with PhotoPatterned Gate Dielectric
S. H. Lee, S. H. Han, Y. R. Son, K. J. Lee, W. S. Kim,
G. S. Cho, D. J. Choo, J. Jang
Kyung Hee Univ., Korea

We have fabricated pentacene organic thin-film transistor with photopatternable gate dielectric layer on plastic substrate. The gate dielectric
was spin coated from a solution and patterned by UV exposure througha photomask. We achieved a high-performance OTFTs on plastic
substrate exhibiting a field-effect mobility of > 1.0 cm2/ Vs and on/off
current ratio of 107. But photo-patternable gate dielectric shows large
hysteresis characteristics. The large hysteresis characteristics could be
eliminated by passivation using poly(para-xylene) layer and annealing
in a vacuum oven.

57

Thursday
AMDp - 5

December 7
Methods for Improving Color Washout Performanceon MVA Mode LCD-TV Panel Applications
H.-L. Hou, Y.-P. Huang, W.-K. Huang, C.-H. Tsao,
J.-J. Su, T.-J. Chang, P.-L. Chen, Y.-J. Lin, K.-Y. Lin
AU Optronics, Taiwan

In this paper, three different technologies were proposed to improve thecolor washout per-formance of LCD panel in the oblique view. The
technologies, including C.C. (Coupled Capaci-tance), GFI(Gray Frame
Insertion) and Pixel rendering, were applied on 32 inch MVA LCDs todemonstrate the performance and for evaluating the other impacts.
AMDp - 6

Thermally Stable Pentacene TFT with Organic/
Inorganic Hybrid Passivation Layers on Plastic
Substrate
Y. R. Son, S. H. Han, S. H. Lee, K. J. Lee, W. S. Kim,
G. S. Cho, D. J. Choo, J. Jang
Kyung Hee Univ., Korea

We studied the organic/inorganic hybrid passivation of highperformance pentacene TFT. Double layers of parylene and SiNx were
deposited on the OTFT to protect it from vapor adsorption. The OTFT
exhibited a field-effect mobility of 1.12 cm2/V・s, on-off current ratio of
107 after the passivation. With the hybrid passivation layers on OTFT, it
was found to be stable under bias-temperature annealing. This
indicates that OTFT can be used for a high performance display withlong lifetime.
AMDp - 7

Temperature Dependence of Threshold Voltage for
Low Temperature Polysilicon TFTs
M. Matsumura, T. Kaitoh*, M. Hatano
Hitachi, Japan*Hitachi Displays, JapanThe temperature dependence of threshold voltage (VT) for low
temperature poly-silicon (LTPS) thin-film transistors (TFTs) were
investigated. The TFTs with the lower trap density showed the smaller
temperature coefficient. The temperature dependence was explainedby the density of space-charges originated from charged traps.
AMDp - 8

Low-Temperature Formation of Si Oxide Film byUsing Silicone Oil and Ozone Gas
K. Toriyabe, K. Nishioka, S. Horita
JAIST, JapanSi oxide films were formed by using thermal reaction between silicone
oil and ozone gas on the Si substrate at more than 200°C. The
deposition profile was like cheveron. FT-IR spectra showed that the film
was consisted mainly of mainly Si-O bonds and contained a small
amount of OH bond. The nitrogen annealing at 300°C reduced theamount of OH bond in the film and made the electrical properties
almost similar irrespective of deposition temperature.
58

Thursday
AMDp - 9

December 7
Novel Design for a-Si:H TFTs with Promising
Mechanical Reliability on Flexible Substrate
P.-C. Chen, K.-Y. Ho, M.-H. Lee, C.-C. Cheng, Y.-H. Yeh
ITRI, Taiwan

In this paper, we investigated several kinds of a-Si:H TFTs structuresfabricated on polyimide (PI) substrate at 160 °C under 1x104 cycles ofmechanical bending stress. After mechanical bending stress, thethreshold voltage of different a-Si:H TFTs structures have different shift.
It is a critical task to optimize suitable design for a-Si:H TFTs on flexible
substrate. L-shape design a-Si:H TFTs with better stability after bending
stress. It is a good candidate for the SOP or pixel array on flexible
substrate.
AMDp - 10

Process Optimization of Ink-Jet Printing for Organic
Thin-Film Transistors
K. T. Han, D. H. Song, M. H. Choi, D. L. Choi,
A. Sautter*, J. Jang
Kyung Hee Univ., Korea*
H.C. Starck, Germany

We studied the organic thin-film transistor (OTFT) with a solution based
DH4T (dihexylquaterthiophene) by inkjet printing. In order to obtain asmooth and uniform film of DH4T, the substrate temperature waselevated to 60°C and the printing was performed by an overlapping
method. The OTFT on plastic exhibited an on/off current ratio of -107, athreshold voltage of -0.25 V, a gate voltage swing of 0.45 V/decade anda field-effect mobility of 0.043 cm2/Vs in the saturation region.
AMDp - 11

Electric Field Induced Reduction of Trap States in
Poly-Crystalline Silicon Thin-Film Transistors
S. Yan, O. Hung, T.-H. Hsieh, C. Yang, J.-P. Pang
InnoLux Display, Taiwan

In this study, the electric field induced reduction of trap states in polycrystalline silicon thin film transistors has been demonstrated. Even
though the threshold voltage of the TFT is slightly increased after staticor near-static stress due to hole injection into the gate insulator, themobility and sub-threshold swing are improved to compensate thedriving current. A static or near-static stress condition at off state of the
TFTs introduces a constant junction electric field to reduce the trap
states at source/drain junction and alleviate the leakage current.

59Thursday
AMDp - 12

December 7
Organic Thin-Film Transistors with ReducedPhotosensitivity
C.-S. Chuang, S.-T. Tsai, F.-C. Chen, H.-P. ShiehNat. Chiao-Tung Univ., Taiwan

OTFTs with reduced-photosensitivity have been made by blendingtitanium dioxide (TiO2) nanoparticles into the polymer dielectric layer.
The minimized shift of threshold voltage and more stable photocurrent
are attributed to the introduction of recombination centers induced by
the doping of TiO2. The localized energy levels deep in the energy gap
and away from highest occupied molecular orbital (HOMO) and lowest
unoc-cupied molecular orbital (LUMO) of pentacene may serve as therecombination centers, which can enhance substantially therecombination process in the OTFTs.
AMDp - 13

Amorphous Silicon Gate Driver with Low Power
Consumption and Highly Driving Capability for High
Resolution Mobile Displays
W.-K. Lee, J.-H. Lee, H.-S. Park, S.-J. Kim, M.-K. Han
Seoul Nat. Univ., Korea

We propose a new a-Si gate driver with low power consumption andhigh driving capability for high resolution mobile displays. The proposed
a-Si gate driver has reduced the power consumption by 27.48%
compared with the conventional one due to the reduced input signal
level. The proposed a-Si gate driver has a highly driving capability byseparating the gate input signal and the carry signal so that the
distortion of the gate signal would be prevented.
AMDp - 14

The Effects of Preoxidation by N2O plasma on the
Silicon Dioxide as a Gate Insulator of Poly-Si ThinFilm Transistor on a Flexible Substrate Application
J. H. Park, S. M. Han, S. G. Park, S. H. Choi, W. C. Lee,J. S. Jung*, J. Y. Kwon*, M. K. Han
Seoul Nat. Univ., Korea*SAIT, Korea

In order to improve the SiO2/poly-Si interface characteristics, we haveinvestigated the interface treatment on a flexible substrate application.
The preoxidation by N2O plasma reduces the transition layer, which isdeposited during the initial growth stage, between poly-Si and SiO2.
The C-V characteristics of SiO2 by N2O plasma irradiation wereconsiderably improved due to the decrease of interface defect densities.
The B-V characteristics are also improved from 0.7 MV/cm2 to 2.4 MV/
cm2 by the preoxidation.

60

Thursday
AMDp - 15

December 7
Effective Luminance Compensation: Advanced
Driving Method to Improve LCD Response Time
S. K. Lee, Y. H. Kim
Pohang Univ. of S&T, Korea

Overdriving has become a general technique to improve the slow
electro-optical response time of TFT-LCD panels. However, even when
overdriving is used, there is a difference between the target luminanceand the effective luminance in moving pictures. This paper proposes a
new driving method that compensates the effective luminance, which
can improve not only the optical response time but also the effective
luminance deviation. In experiments, the proposed method showed
better motion picture quality than previous overdriving methods.
AMDp - 16

Application of Supercritical Fluids for Amorphous
Silicon Thin-Film Transistors
C.-T. Tsai, T.-C. Chang*, P.-T. Liu**, P.-Y. Yang**Nat. Tsing Hua Univ., Taiwan*
Nat. Sun Yat-Set Univ., Taiwan**Nat. Chiao Tung Univ., Taiwan

Supercritical fluid technology is employed for the first time to passivate
the defect states in amorphous silicon thin film transistors at low
temperature (150°C). Experiment results indicate that superior transfer
characteristic is obtained and the density of states is reduced
significantly after the treatment of supercritical fluids mixed with water/
propyl alcohol. The supercritical fluids have gas-like properties ofdiffusivity and viscosity that allow it to efficiently carry H2O molecule
into amorphous thin film and passivate defects at low temperature.
AMDp - 17

The Effect of Surface Plasma Treatment for n+Contact Layer on Photocurrent Reduction in a-Si:H
TFTs for AMLCDs
Y.-S. Lee, F.-Y. Gan, C.-W. Lin*, C.-C. Shih, T.-Y. Hsu,
J.-K. Chang, H.-T. Lin, S.-J. Lin
AU Optronics, Taiwan*
Tatung Univ., Taiwan

Not only the heavily doping efficiency during the deposition of n+ a-Si:H
layer but also a suitable plasma treatment upon the surface of depositedn+ a-Si:H layer can reduce the photocurrent in a-Si:H TFTs. The
enhancement of the doping efficiency by a surface plasma treatment of
H2 and PH3 gases upon n+ a-Si:H layer is probably due to both thereplenishment of phosphorus atoms to connect with silicon atoms andthe compensation of dangling bonds with hydrogen atoms.

61Thursday
AMDp - 18

December 7
A Nobel a-Si:H Gate Driver with High Reliability
J. H. Koo, J. W. Choi, Y. S. Kim, M. H. Kang, K. W. Ahn,
J. Jang
Kyung Hee Univ., Korea

We propose two kinds of a-Si:H gate driver with less threshold voltage
shift, longer life time and more simplified structure. The one is the gate
driver with only one pull down transistor for driving small panel, theother is the gate driver with two pull down transistors for driving large
panel. These pull down transistors of gate drivers are under AC bias
which show much less degradation than those under DC driving.
AMDp - 19

A Novel Repair Method for Integrated Gate Driver
CircuitY. H. Yeh, C. C. Wei, S. H. Lo, Y. E. Wu
AU Optronics, Taiwan

We have designed a repair structure that can be used for repairing
integrated gate driver circuit. This structure consists of several wires toconnect the redundant circuit and the shift register for repairing. We
have developed 12.1 inches WXGA a-Si TFT-LCD prototype panels withthe repair structure, and there is no horizontal line defect occurred after
panel repairing. The output of the repair structure is confirmed to be thesame with normal gate driver by the experimental results.
AMDp - 20

The Structure of Hydrogenated Microcrystalline
Silicon (µc-Si:H) TFTs Deposited by PECVD
C.-Y. Wu*, Y.-Y. Tsai*, C.-C. Lai*, C.-H. Ma*,
Y.-H. Chien*’**, W.-Y. Uen***
Chunghwa Picture Tubes, Taiwan**Chung Yuan Christian Univ., Taiwan

Hydrogenated microcrystalline silicon is prepared by PECVD with
controlling factors included SiH4/H2 gas flow rate, RF power, andpressure, respectively. Surface morphology is observed, and grain size
is about 20-30nm. The behaviors of Vth and mobility under bias gate
stress, light illuminated and thermal treatments, indicate unobvious
difference to a-Si:H TFTs. Crystallization distribution by Raman
spectrometer and HRTEM, it’s proven the transistor channel betweenµc-Si:H/SiNx interface its structure is still the amorphous state.

62

Thursday

December 7

AMDp - 21

Activation Behavior of SLS poly-Si after Ion Shower
DopingB.-J. Jin, S.-J. Oh, D.-H. Kim*, T. Uemoto*, C.-W. Kim*,
J.-S. Ro*
Hongik Univ., Korea*
Samsung Elect., Korea

Thermal activation was carried out using SLS poly-Si or ELC poly-Si
after B+ ion shower doping. Reverse annealing was found in thetemperature ranges between 400°C and 650°C investigated in thisstudy. Grain boundaries seemed to play a critical role for dopant
activation in poly-Si at low temperatures. The RTA treated samples
were observed to exhibit lower sheet resistance than the FA treatedone. The reverse annealing is believed to play an important role foractivation efficiency.
AMDp - 22

Effects of Grain Boundaries on the Anomalous
Subthreshold Behavior of Excimer Laser Crystallized
Poly-Silicon TFTs
D.-K. Shih, F.-T. Chu, H.-T. Chen, Y.-H. Yeh
ITRI, Taiwan

We investigated the grain boundary effect on the abrupt subthreshold
behavior, which related to the impact ionization effect occurring near thedrain-end region of the channel, of LTPS n-TFTs fabricated by 2-shot
SLS and conventional ELA crystallization methods. The results showedthat the ELA-TFTs had a higher drain voltage to trig the abrupt
subthreshold behavior than that of the SLS-TFTs. The results alsosuggested that both SLS- and ELA-TFTs were damaged once theabrupt subthreshold behavior occurred.
AMDp - 23

Selective Crystallization of a-Si by Using a Shadow
Mask
K. H. Kim, S. J. Park*, Y. M. Ku*, E. H. Kim**, J. H. Bae,S. K. Kim, B. H. Kwon, C. O. Kim***, J. Jang**
Kostek Systems, Korea*BOE Hydis Tech., Korea**Kyung Hee Univ., Korea***
Han Yang Univ., Korea

Amorphous silicon on glass substrate was selectively crystallized byscan of Nd:YVO4 CW laser. By adopting shadow mask on top of the aSi during laser crystallization, photolithography for pre-patterning a-Si
can be avoided. About 35 µm wide sequential lateral crystallization(SLC) region with almost 6 〜 7 µm wide grains are observed at the laser
power of 10 W and the scan speed of 250 mm/s. This means highperformance LTPS on glass can be achieved more easily.

63

Thursday
AMDp - 24

December 7
Passivation of Inkjet Printed Organic Thin-Film
Transistor
D. H. Song, M. H. Choi, D. L. Choi, K. T. Han,
A. Sautter*, J. Jang
Kyung Hee Univ., Korea*H.C. Starck, Germany

We fabricated printed organic thin-film transistor (OTFT) using α,ωdihexylquaterthiophene (DH4T) and passivated it to protect organic
semiconductor from O2 and H2O. The passivation layer on the DH4T
was formed with use of poly-para-xylylene (parylene-C). The
passivation slightly decreases its on-state current and field-effectmobility. The OTFT after the passivation exhibited the field-effectmobility of 0.013 cm2/Vs, threshold voltage of -1.44V, and on/off ratio of-106. We also investigated the instability of the OTFT under the gatebias stress and found that the threshold volt-age shifted a little.
AMDp - 25

Stable Modification of Surface Energy Using UV
Irradiation
B. K. Choo, J. S. Choi, N. Y. Song, K. C. Park, J. Jang
Kyung Hee Univ., Korea

We have studied the surface modification of Cr by ultra violet (UV)
irradiation. We achieved high contact angle difference of 108.94° after
monochromatic UV irradiation through attaching polydimethylsiloxane(PDMS) on Cr surface. Area of high surface energy was formed by O3
treatment and area of low surface energy by methyl compound transferfrom PDMS surface to Cr surface during UV exposure. Surface energy
can be controlled by UV exposure without chemical treatment.
AMDp - 27

Thermal-Cured Polyacrylate Insulators for PlasticBased Organic Thin-Film Transistors
G. H. Kim, S. M. Yoon, K. H. Baek, S. Y. Kang, I. K. You,S. D. Ahn, K. S. Suh
ETRI, Korea

Chemically and thermally stable, thermal-cured polyacrylate having ahydrophobic nature, which were prepared by mixing polyacrylate having
reactive sites and functional-anhydride, exhibits good insulation
properties and high breakdown voltage (> 4.0 MV/cm) as a dielectric.
Plastic-based organic thin-film transistors with the thermal-acryl
dielectric layer showed typical IDS-VDS characteristics; the field-effectmobility was calculated to be 0.22 cm2 V -1 s-1, while the thresholdvoltage was approximately - 8 V. It has been found that thin dielectric
layers gave higher field-effect mobility.

64Thursday
AMDp - 28
14:00

December 7
Enhanced Organic Thin-Film Transistors with
Polymer Gate and Double Polymer Dielectric Layer
J. H. Seo, J. H. Kwon, N. R. Kim, Y. H. Lee*, B. K. Ju
Korea Univ., Korea*Nano Device Physics Lab., Korea

Enhanced organic thin-film transistors (OTFTs) using double polymer
dielectric layer (PVA+PVP, 370nm) for bendable device is fabricated byspin-coating and photolithograph patterning. These OTFTs have a meritto adapt a soluble process with stable, high performed dielectric layer
so that achieve good characteristics. There measured εr = 8.4 of
PVA+PVP double layer, ID=6.45 A at VG= 25V, ID=3.3 A at VG=15V ofoutput current, 2.64 × 103 of on/off ratio and 0.011cm2/Vs of mobility,
respectively.
AMDp - 29
14:00

Liquid Controller
C.-K. Yen, Y.-T. Li, H.-H. Chen, W.-D. Tyan
ITRI, Taiwan

We demonstrate that this meniscus can act as an optical scanner,which is a device that can control the position of a light beam in one ormore orthogonal spatial dimensions. It is showed that the incident light
can be deflected by switching the electrode drive voltage of the liquid
device. This idea is key to the design of the proposed liquid prism that
can allow a beam scan between the discrete states of the applied
voltage.
AMDp - 30
14:00

Excimer Laser Annealing of Hydrogen Modulation
Doping a-Si Film for Flexible Display
A. Heya, T. Serikawa*, N. Kawamoto**, N. Matsuo
Univ. of Hyogo, Japan*Osaka Univ., Japan**
Yamaguchi Univ., Japan

Novel crystallization method for low temperature process was
proposed, named excimer laser annealing of amorphous silicon (a-Si)
with hydrogen (H) modulation-doped layer (ELHMD). The effects of H
on low energy crystallization by conventional ELA and ELHMD were
investigated. The film exfoliation by H2 burst can be suppressed byusing HMD a-Si film. It is considered that high quality polycrystalline
silicon films can be obtained by ELHMD and H modulation doping has
effect of controlling the nucleation site toward film thickness.

65Thursday
AMDp - 31L

December 7
Effects of Source and Drain Impurity Profile on
Breakdown Voltage of High-Performance Si TFTs
S. Tsuboi, G. Kawachi, M. Mitani, T. Okada
Advanced LCD Tech. Dev. Ctr., JapanThe effects of the source and drain junction depth on breakdown
voltage of high-performance Si TFTs have been studied. It was foundthat decreasing the junction depth results in a substantial increase in
the source-drain breakdown voltage (VBD). The improvement in VBD is
primarily due to suppression of impact ionization. Reduced impact
ionization originates from suppression of the body potential elevation in
the shallow junction structure that allows for penetration of the excess
holes beneath the source n+ region.
AMDp - 32L

High Performance Mobile Application with the High
Aperture Ratio FFS (HFFS) Technology
D. H. Lim, H. Y. Lee, J. P. Kim, K. J. Lee, H. J. Yun,
K. Y. Han, Y. H. Jeong
BOE HYDIS Tech., Korea

We have developed a high performance 2.03-in TFT-LCD for mobile
application using the high aperture ratio FFS technology. The display
shows high transmittance as well as high color gamut, high contrast
ratio, and wide viewing angle over 160°.
AMDp - 33L

Advanced Transmissive-LCDs with High Reflectancein RGBW Color System
C. Y. Tsai, M. C. Lee, Y. C. Tsai, Y. J. Chang,
W. C. Chang, D. L. Ting
TPO Display, Taiwan

Last year we introduced ATR technology to improve reflectance of atransmissive LCD. It is suitable for portable cellular phone or notebook
application. Now, we make progress on outdoor readability for highsaturated and resolution transmissive LCD. In this report, we introduce
a new RGBW color system, which combines RGBW architecture with
ATR technology. It could greatly not only enhance the reflectance, butalso optimize reflective image quality. Reflectance could go up to 2.3%
and contrast ratio is about 5.

66

Thursday

December 7

AMDp - 34L

N- and P-Channel Poly-Si TFTs with Very-Low
Substrate-Temperature Sputter-Deposited SiO2 Films
T. Serikawa, T. Miyamoto*, H. Ueno*, Y. Sugawara*,
Y. Uraoka*, T. Fuyuki*
Osaka Univ., Japan*
Nara Inst. of S&T, JapanN- and P-channel poly-Si TFTs were fabricated by sputter-depositing
gate SiO2 films at substrate temperature down to room temperature.
Electrically measurements clarified that characteristics of mobility,
threshold voltage, subthreshold slope and on-off current ratio are
improved with decreasing of substrate temperature for both n- and pchannel poly-Si TFTs. This leads to that poly-Si TFTs with sputterdeposited gate SiO2 films, especially for room temperature deposited
SiO2 films, are highly potential in realizing advanced flat panel displays.
14:00 - 17:00

Ohmi 5-7

Poster AMD/OLEDp: AM-OLED
AMD/OLEDp - 1

2-in. QQCIF Top-Emission AMOLED Drived by Low
Temperature Poly Silicon TFT on Flexible Metal Foil
with BCB Planarization
D. J. Park, Y. H. Kim, M. H. Lee, J. H. Moon,
C. H. Chung, Y. H. SongETRI, Korea

We have developed a 2 inch QQCIF LTPS-TFT AMOLED display with a
top emission structure on a 50-µm-thick metal foil with BCB
planarization. The p-channel poly-Si TFT on flexible metal foil exhibitedthe field-effect mobility of 54cm2/Vs, the on/off current ratio of 106, thethreshold voltage of -3V, and the subthreshold slope of 0.8V/dec.
Finally, a images from prototype monochrome AMOLED displays are
successfully presented, with 64 × 88 pixels and 56-ppi resolution.
AMD/OLEDp - 2

A Novel Compensation Pixel Circuit of AMOLED
Display for Stable OLED Current
M. H. Kang, J. W. Choi, J. H. Koo, Y. S. Kim, K. W. Ahn,
J. H. Hur, S. W. Lee, J. Jang
Kyung Hee Univ., Korea

We propose a new pixel circuit for a-Si:H AM-OLED display. The
voltage-programming method is used in the pixel circuit forcompensating the threshold voltage shifts of a-Si:H TFTs. One of theswitching TFTs takes a role of preventing the peak current flowing to
OLED during reset and compensation periods. We have designed an
Emission Control Pulse (ECP) generator based on gate signals tocontrol the switching TFT. The operation and stability of proposed pixel
circuit are proved by SPICE simulation.

67

Thursday

December 7

AMD/OLEDp - 3

A Voltage Driver IC with Automatic LuminanceControl for 256-Level Full Color Active-Matrix OLED
Displays
J. H. Lee, D. C. Park, C. H. Park, S. H. Kim, H. K. Yun,
G. N. Kim, I. S. Kang, B. N. Kim
Samsung Elect., Korea

An AMOLED driver IC using voltage driving scheme, one of driving
methods to drive AMOLED, is developed. The developed driver IC can
automatically control the luminance and has 256 gray levels for LTPSQVGA full-color AMOLED Displays. To reduce the chip size, thedeveloped driver IC also uses one source amplifier for RGB. As a result,it has 240 source outputs and the separated serial gamma circuits.
AMD/OLEDp - 4

New Pixel Circuit Employing Fast VTH Detection
Scheme for LTPS AMOLED
H.-S. Shin, W.-K. Lee, S.-G. Park, S.-H. Choi, M.-K. Han
Seoul Nat. Univ., Korea

We propose a novel pixel design employing fast threshold voltage
detection scheme for active matrix organic light emitting diode(AMOLED) displays using low temperature polycrystalline silicon thinfilm transistors (LTPS-TFTs). The proposed pixel circuit, which consistsof 5 p-type TFTs and 2 capacitors, has a fast threshold voltage
detection scheme using the clock signal. The simulation results showthat the proposed pixel circuit exhibits a scan time less than 7 micron
second and successfully compensates Vth variation of poly-Si TFT.
AMD/OLEDp - 5

Capacitive Compensation to Suppress Sample-andHold Non-Idealities in Switched-Current AMOLED
Pixel Circuits
X. Guo, S. R. P. Silva
Univ. of Surrey, UK

A simple and effective capacitive compensation method is presented tosuppress the sampling and hold (S/H) non-idealities in switched-current(S-I) AMOLED pixel circuits for inverting structure top-emitting OLEDs,
and thus greatly improve the output linearity of the circuit. The method
can also be used to design the p-TFT S-I pixel circuit for normal
structure top-emission OLEDs, and some other configurations of S-I
AMOLED pixel circuits, or even voltage-mode driven pixel circuits.

68Thursday
AMD/OLEDp - 6

December 7
A Novel Threshold Voltage Compensation Pixel
Circuit with High Immunity to the Supply Voltage
Drop for AMOLED Displays
H.-Y. Lu, P.-T. Liu, T.-C. Chang*, S. Chi
Nat. Chiao Tung Univ., Taiwan*
Nat. Sun Yat-Sen Univ., Taiwan

A new pixel circuit employing LTPS TFT for AMOLED is proposed. The
proposed one can eliminate both the threshold voltage variation of thedriving TFT and the supply voltage drop. The simulation results indicatethat the proposed circuit significantly improves the non-uniformity ofoutput current by the new compensation operation.
AMD/OLEDp - 7

A New Drive Method for Large Organic Light-Emitting
Diode Displays
J. C. Rutherford, C. A. Wedding, D. K. Wedding*
Imaging Syss. Tech., USA*
Univ. of Toledo, USA

This new drive method eliminates obstacles that affect the performanceof very large organic light-emitting diode displays on plastic substrates.
Increased component tolerances reduce problems caused bydimensional instability of plastic substrates. The enhanced performanceenabled by using this drive method is not matched by other active
matrix drive methods.
AMD/OLEDp - 8L

Polarity Inversion Driving Method to Reduce theThreshold Voltage Shift in a-Si:H TFT AMOLED
H.-S. Park, J.-H. Lee, J.-H. Jeon*, M.-K. Han
Seoul Nat. Univ., Korea*
Hankuk Aviation Univ., Korea

We have proposed a new driving method to improve the current stabilityof a-Si:H TFT for AMOLED. The proposed scheme performs thenegative bias annealing on a-Si:H TFTs during a certain period of aframe time. The amplitude of negative bias to cure the degradation of aSi:H TFTs is determined by the previously applied positive voltage
which displays the original image. Our simulation result shows that it
can suppress the degradation of a-Si:H TFT and provide the goodscreen uniformity.

69

Friday

December 8
Friday, December 8

9:00 - 10:25

Ohmi 2

AMD6: TFT Technologies (1)Chair:
Co-Chair:AMD6 - 1:
9:00

M. Furuta, Kochi Univ. of Tech., Japan
T. Noguchi, Univ. of Ryukyus, Japan
Invited Printing Formation of Low-Temperature PolySi TFTs
M. Furusawa, H. Tanaka, T. Kamakura, T. Shimoda
Seiko Epson, JapanThe solution processing and printing formation of LTPS TFTs aredescribed. We have developed a novel liquid precursor that can form
amorphous silicon films by spincoating and baking the precursor. The
amorphous silicon was converted to poly-Si by laser crystallization tofabricated top-gate LTPS TFTs using standard fabrication steps except
silicon film. The TFTs operated with the mobility of 108 cm2/Vs. Inkjet
printing of the silicon precursor and nano-particle base silver ink tofabricate LTPS TFTs are also described.
AMD6 - 2
9:25

Floating-Body and Self-Heating Effects
Characterization of Poly-Si TFTs through AC Output
Conductance Measurement
K. Takatori, H. Asada, S. Kaneko
NEC LCD Techs., Japan

The AC output conductance of poly-Si TFT is measured in thefrequency domain. The increase of the conductance related to thefloating-body effect (FBE) is observed in the higher drain bias region.
The FBE is suppressed with increase of frequency. The conductanceincrease caused by the self-heating effect (SHE) suppression isobserved in the frequency regions over 0.1[MHz]. Although the changes
caused by FBE are bias-dependent, those caused by SHE are biasindependent. Longer channel width shows larger frequency
dependency.

70

Friday
AMD6 - 3
9:45

December 8
The Mechanisms of On/Off Currents for the DualGate a-Si:H Thin-Film Transistors with Various
Lengths of Indium-Tin-Oxide Top Gate
C. Y. Liang, F. Y. Gan, T. C. Chang*, P. T. Liu**,
F. S. Yeh***
AU Optronics, Taiwan*Nat. Sun Yat-Sen Univ., Taiwan**
Nat. Chiao Tung Univ., Taiwan***Nat. Tsing Hua Univ., Taiwan

With various sizes of ITO top gate length, we clearly identify that thevarious on currents for the dual-gate TFTs with dual-gate driving are
due to the high resistance of the parasitic intrinsic a-Si:H regions
between the back electron channel and the source/drain contact. For
the off state of the dual-gate TFTs, the Poole-Frenkel effect is alsoenhanced due to the back channel accumulation holes in the vicinity to
the source/drain contact.
AMD6 - 4
10:05

Performance Evaluation and Design Guidelines of
Sub-100-nm Source/Drain Unilateral-Crystallized
Poly-Si TFTs for SoP Applications
X. Guo, A. A. D. T. Adikaari, S. R. P. Silva
Univ. of Surrey, UK

The thickness spatial modulation method can realize high-performancesource/drain unilateralcrystallized (SDUC) poly-Si thin-film transistors(TFTs). The resulted thick source/drain, un-doped thin-channel device
structure is also very promising for ultra-scaled device design. With acalibrated simulation model, the performance and process sensitivity of
sub-100-nm SDUC TFTs were predicted by numerical simulations. The
results indicate the manufacturability of the devices and highlightguidelines of optimizing the devices for different requirements of lowpower or high-performance applications.
----- Break -----

71

Friday

December 8

10:40 - 11:40

Ohmi 2

AMD7: TFT Technologies (2)Chair:
Co-Chair:M. Furusawa, Seiko Epson, Japan
M. Ikeda, Toshiba Res. Consulting, Japan

AMD7 - 1
10:40

Characterization of Trap Density at Grain Boundaries
Using Doped Poly-Si TFTs
T. Yoshino, M. Kimura, T. Sameshima*
Ryukoku Univ., Japan*Tokyo Univ. of A&T, Japan

Trap density at grain boundaries has been characterized using doped
poly-Si TFTs. First, using C-V characteristics, Fermi levels and dopant
densities are determined. Next, using I-V characteristics, field-effectmobility and potential barriers over the grain boundaries are
determined. Finally, by varying dose densities, an energy profile of thetrap density is extracted. This is one of the complementary methods tocharacterize the trap density at grain boundaries.
AMD7 - 2
11:00

Single Shot Laser Heat Retaining Enhanced
Crystallization for High Performance Poly-SiliconThin-Film Transistors
J.-X. Lin, H.-T. Chen, H.-H. Wu*, G.-R. Hu, P.-F. Lee,
C.-L. Chen, Y.-C. Chen
ITRI, Taiwan*Nat. Chiao-Tung Univ., Taiwan

High performance poly-silicon crystallization method, Heat Retaining
Enhanced Crystallization, is developed. 14µm fully lateral grown polysilicon was obtained through single shot laser irradiation. Transientreflectance analysis on the HREC method demonstrated a long melt
duration of 1100ns. A dual gate HREC TFT was fabricated, exhibiting afield effect mobility of 260 cm2/Vs. The single shot laser HREC method
enabled a high throughput of 26 sheet/hr, concluding that HREC ispotential, reliable, and cost-effective for high performance poly-silicon
TFT production.
AMD7 - 3
11:20

Stable and High Mobility Low Temperature
Microcrystalline Silicon TFTs to Drive OLEDs
K. Kandoussi, T. Mohammed-Brahim, C. Simon,
N. Coulon, C. Prat*
Univ. Rennes 1, France*Thomson, France

Low temperature (180°C) deposited PECVD µc-Si films are used as
active layer of top-gate TFTs using a maximum process temperature of
200°C. These TFTs exhibit an electron mobility of 2 cm2/V.s and a highstability under gate bias stress. The on-current of 100 µm / 20 µm TFTs
at a drain voltage of 3V is shown to be sufficient to drive 1 mm2 wide
Thomson green OLEDs device.
----- Lunch ----72

Friday

December 8

14:00 - 15:25

Ohmi 2

AMD8: Organic TFT (1)Chair:
Co-Chair:
AMD8 - 1:
14:00

S. Horita, JAIST, Japan
M. Ando, Hitachi, Japan
Invited Passivation of Organic Thin-Film Transistors
for Flexible Displays
J. Jang, S. H. Han
Kyung Hee Univ., Korea

We studied the effect of passivation on the stabilities of the pentacenethin-film transistor (TFT) fabricated on plastic with self-organizedprocess. The degradations in on-current, threshold voltage and fieldeffect mobility of the TFT are greatly reduced by the organic multilayer
passivation. The on current is stable under negative or positive bias
stress after the passivation with the layers of PVP and photo-acryl. It isalso stable under heat treatment at 150°C.
AMD8 - 2
14:25

Field-Sequential Color LCD Panel Driven by LowVoltage Operation Organic TFT
Y. Fujisaki, H. Sato, T. Yamamoto, H. Fujikake, T. Kurita
NHK, JapanA field-sequential color LCD panel, which integrates organic TFT(OTFT) with fast-response ferroelectric liquid crystal (FLC), has been
fabricated on a plastic film. The fabricated pentacene based-OTFT with
Ta2O5 gate insulator showed a mobility of 0.3 cm2/Vs and a current on/
off ratio of 107 at a low drain voltage of -5V. The OTFT and the FLC withpolymer networks and walls were assembled by the printing technique.
Fast-response speed and color display operation are successively
demonstrated.
AMD8 - 3
14:45

Carrier Mobility Enhancement in Organic TFTs witha Polymer Gate Insulator showing Low Surface
EnergyT. Houryu, Y. Fukuba, Y. Kouda, Y. Iimura
Tokyo Univ. of A&T, Japan

In order to improve carrier mobility of pentacene organic TFTs (OTFTs), we have studied the effect of gate insulating materials on themobility. Despite the reduction of the grain size, a gate insulating
polymer material having low surface free energy, which is used forvertically alignment film of liquid crystals, significantly enhances thecarrier mobility from 0.4cm2/Vs up to 2.0cm2/Vs.

73

Friday
AMD8 - 4
15:05

December 8High-Performance N-type Organic Field-EffectTransistor with Poly(4-vinyl phenol) as Gate
Dielectric
C. F. Sung, Y. Z. Lee, K. Cheng, C. W. Chu*
ITRI, Taiwan*
Academia Sinica, Taiwan

We have fabricated organic thin-film transistors (OTFTs) based on a[6,6]-phenyl-C61-butyric acid methyl ester (PCBM) with cross-linked
poly-4-vinyl phenol (CPVP) as gate dielectric. Better performance isobserved compared to the device fabricated with SiO2. The PCBM thinfilm transistor with cross-linked PVP dielectric exhibits a mobility of
0.0132 cm2 V -1 s-1, an Ion/Ioff ratio of 105, and a sub-threshold slope of
0.87 Vdecade-1. This solution process with excellent dielectric property
leads to an achievement of high electron mobility in OTFTs.
----- Break -----

15:35 - 17:00

Ohmi 2

AMD9: Organic TFT (2)Chair:
Co-Chair:
AMD9 - 1:
15:35

M. Kimura, Ryukoku Univ., Japan
Y. Inoue, NHK, Japan
Invited Alignment-Free Printable Process for Organic
Thin-Film Transistors
M. Ando*,**, M. Kawasaki*,**, S. Imazeki*,**,
T. Minakata**,***, Y. Natsume**,***, T. Inoue*, K. Noda*,
T. Arai*, M. Fujimori*, M. Ishibashi*, M. Kato*, T. Shiba*,
T. Kamata****, K. Kozasa****, S. Uemura*****
Hitachi, Japan**OITDA, Japan***Asahi-Kasei, Japan****
AIST, Japan

Recent progress of the self-aligned self-assembly (SALSA) process fororganic TFTs was reviewed. SALSA TFTs exhibited the field-effectmobility over 0.1 cm2/Vs, in which semiconductor, source/drainelectrodes and gate insulator were all solution processed. 100x100
matrix arrays of 85 ppi resolution were fabricated, in which solutionprocessed source electrodes and drain lines were self-aligned to gateline patterns specially designed for SALSA process. Materials andprocess newly developed for flexible plastic substrates were also
introduced.

74

Friday
AMD9 - 2:
16:00

December 8
Invited Full Fabrication Process for AM-OLED Using
Solution-Processed Tetrabenzoporphyrin Thin-Film
Transistor
R. Hattori, C.-H. Shim, S.-G. Lee, M. Tazoe,
T. Nakashima, S. Aramaki*, A. Ohno*, Y. Sakai*
Kyushu Univ., Japan*
Mitsubishi Chem., Japan

Full fabrication process of An AM-OLED pixel with solution processedorganic TFTs composed of metal-complex tetrabenzoporphyrin as anactive layer and polystyrene as a passivation layer was presented. The
TFTs were isolated using an RIE process and miniaturized for
implementation into a pixel size of 100 µm x 300 µm.
AMD9 - 3
16:25

Plastic Thin-Film Transistor with Printed Electrodes
by Using Nanoprinting with h-PDMS Stamp
J. Jo, J.-H. Choi, K.-Y. Kim, E.-S. Lee, M. Esashi*
KIMM, Korea*
Tohoku Univ., JapanNo abstract was submitted.
AMD9 - 4L
16:45

High Speed Organic TFT for Electronic Paper
H. Kondo*’**, A. Kaneko*, H. Kondoh**, K. Kudo*’***
OptoElect. Ind. & Tech. Dev. Assn., Japan**
RI, Japan***Chiba Univ., Japan*

An organic TFT having a novel structure, FVC (Floating metal Vertical
Channel)-type TFT has been developed. Both the reduction of gate
capacitance and short channel length can be realized in this structure,
which are necessary for the fast response of TFT by simple fabrication
process. FVC-type TFT shows the I-V characteristics similar to those of
conventional TFT, and the cutoff frequency of 400KHz was confirmed,
which is very high value as an organic TFT.

Author Interviews
17:00 – 18:00
Supporting Organizations:LC Physics and Condensed Matter Forum, JLCS
Chemistry and LC Material Forum, JLCS
Liquid Crystal Display Forum, JLCSTechnical Group on Information Display, ITE
Technical Committee on Electronic Information Displays, ElectronicSociety, IEICE
Technical Committee on Electron Devices, Electronics Society, IEICE
Technical Committee of Silicon Devices and Materials, IEICE
Thin Film Materials & Devices Meeting75

Wednesday

December 6

Workshop on FPD Manufacturing,
Materials and Components
Wednesday, December 6
13:20 - 14:20

Ohmi 3

FMC1: Color Filters
Chair:
Co-Chair:
FMC1 - 1:
13:20

K. L. Lo, ITRI, Taiwan
T. Tomono, Toppan Printing, Japan
Invited Film Base FPD Components by Roll-to-Roll
Process
S. Otsuki, T. Eguchi
TRADIM, Japan

TRADIM is developing the film base FPD components manufacturing by
Roll-to-Roll process that taking full advantage of its material. We havedeveloped color filters, photo-alignment layers directly on the color
filters, achromatic circular polarizer using of photo-alignment technology
and a single component backlight system, each component by Roll-toRoll process. We call this system “TRADIM system”. We intend
proposing the total solution as TRADIM system in order to grow theplastic film base FPD industry.
FMC1 - 2
13:40

Flexible Color Filter Formed on Optical Retardation
Film by Transfer Technique and Characteristics ofReflective Plastic LCD
T. Kitamura, T. Furukawa
Kyodo Printing, Japan

We have already developed the technique of transferring the color filterand electrode pattern on a plastic substrate simultaneously. This time,
we will report on the flexible color filter formed on the optical retardation
film using the same transfer technique. By using the flexible color filter it
becomes possible to fabricate LCD with one of the substrates omitted.
We have actually fabricated a reflective plastic LCD by this technique,and conducted evaluation of the characteristics of the product.

76

Wednesday
FMC1 - 3
14:00

December 6
A New Method to Improve the Alignment Accuracy
for Flexible Color Filter Development
K. L. Lo, W. Y. Cheng, D. W. Li, J. W. Shiu, Y. A. Sha,J. H. Chi*, C. C. Tsai*
ITRI, Taiwan*Chi Mei OptoElect., Taiwan

We had developed a 3.5-inch QVGA color filter with high definition of
118 ppi on plastic substrate by using pigment dispersion color resists
and photolithography method. Thermal deformation of plastic substrate
was a serious problem during color filter development, because it would
affect the alignment accuracy of different color layers. Some handling
methods were adopted to control the thermal process and ensured thateach color layer could be developed in its related position accurately.
----- Break -----

15:00 - 16:00

Ohmi 3

FMC2: Optical Films (1)Chair:
Co-Chair:
FMC2 - 1:
15:00

H. Seiberle, Rolic Tech., Switzerland
Y. Fujimura, Nitto Denko, Japan
Invited Volume Photo-Aligned Retarders
H. Seiberle, T. Bachels, C. Benecke, M. Ibn-Elhaj
Rolic Techs., Switzerland

Coated retarders based on liquid crystal materials are typically alignedby brushing or photo-alignment. Recently, we have managed to
combine the aligning and retarder function into a single material.
Alignment of the new volume photo-alignable retarder (VPR-) material
is induced in the bulk upon exposure to linearly polarized light. The newalignment mechanism opens up a new dimension for the design of
optical retarders, especially when combined with conventional surfacealignment, which allows to induce complex tilt and twist profiles.

Euro Display ’07
September 17–20, 2007
Moscow, Russia
77

Wednesday
FMC2 - 2:
15:20

December 6

Invited Improved Reactive Mesogen Materials for
Incell Optical Films
R. Harding, O. Parri, S. Marden, K. Skjonnemand,
M. Verrall*, B. Fiebranz**
Merck Chems., UK*
Merck Display Techs., Taiwan**Merck KGaA, Germany

The viewing performance of Liquid Crystal Displays is routinely
enhanced by the use of compensation films, usually laminated to theoutside of the LC cell. Now, there is renewed interest in using Reactive
Mesogens to create such films inside the LC cell. This concept places
many new demands onto the RM films, e.g. increased thermal
durability, hardness, adhesion etc. This paper details the new materials/
formulations Merck has developed to address these needs and openly
assesses them against the requirements.
FMC2 - 3
15:40

Vertically Aligned LCD Designs OpticallyCompensated by Thin Crystalline Films
S. Palto*’**, S. Remizov*, I. Kasianova*, N. Guselnikov*,
A. Lazarev**
Crysoptics, Russia**Inst. of Crystallography, Russia

We developed optical compensation for Vertically Aligned mode LCDs
using thin coatable birefringent films produced by Crysoptix Ltd. The
new coatable retarder films compensate both the liquid crystal layer andpolarizers. The new retarders provide near perfect viewing angle
properties in the visible spectral range. We present data of numerical
optimization and experimental results for Vertical Alignment mode LCD.
----- Break -----

16:40 - 18:00

Ohmi 3

FMC3: Optical Films (2)Chair:
Co-Chair:J. S. Yu, LG Chem., Korea
H. Mori, Fuji Photo Film, Japan

FMC3 - 1
16:40

Novel Optical Configuration of In-Plane Switching
Mode with Positive Biaxial Films
M. Hirota, S. Okude, T. Hori, K. Arakawa
ZEON, JapanWe designed the novel optical configuration of an In-Plane Switching(IPS) mode with positive biaxial films on the both sides of a liquid crystal
cell. By using an optical calculation, we confirmed that positive biaxial
films could compensate a black state of an IPS mode. Then, the viewing
angle characteristics of this novel optical configuration wereexperimentally evaluated. As a result, a high contrast ratio for a wideviewing angle range was performed.
78

Wednesday
FMC3 - 2
17:00

December 6
Novel Method for the Design of Compensation Filmfor LCDs
B. K. Jeon, C. H. Yun, M. S. Park, J. S. Yu
LG Chem., Korea

We have developed a novel simulation model for all kinds of birefringent
films, such as uniaxial and biaxial films. By using this model, the fastaxis and retardation value at any viewing angle are easily found. The
polarization state is completely described by fast axis and retardation
value on the Poincare sphere. We can easily optimize the design ofcompensation film in LCD for improving wide-viewing property byanalyzing the polarization state at target viewing angle.
FMC3 - 3
17:20

Design of an Anti-Glare Treatment under Ambient
Conditions
D. Hamamoto, S. Kusumoto, T. Shouda
Nitto Denko, Japan

We examined a technical issue about the surface appearance of
displays having anti-glare (AG) treatment under ambient conditions, andclarified the relationship between the surface shape and the surface
appearance. Then based on the results of this examination, we havesucceeded in developing an AG treatment to lessen surface
deterioration of the appearance caused by “glare” and “white blur”.
Scratches on the surface were also solved by an AG treatment that
hardened the surface.
FMC3 - 4
17:40

New Surface Film Suitable for Large Size LCD-TVs
N. Matsunaga, S. Kato, T. Arai, T. Ito
Fuji Film, Japan

We have succeeded in the development of a new surface film (new CV
Film), it has the function of anti-glare and low-reflection. The new CV
Film has two excellent features of ’Excellent image display quality’ and’Excellent physical properties’ necessary for LCD-TVs especially. As the
new CV Film, we have lined up CV-04 Film which is suitable for large
size LCD-TVs attaching importance to contrast ratio, besides CV-02
Film which is the standard type attaching importance to the antiglittering.

Author Interviews
18:00 – 19:00

79

Thursday

December 7
Thursday, December 7

9:00 - 10:20

Ohmi 8

FMC4: Manufacturing Technologies (1)Chair:
Co-Chair:
FMC4 - 1:
9:00

C. Annis, Displaysearch, Japan
D. Freeman, Photon Dynamics, USA
Invited Challenges of Electrical TFT Array Test for
LCD-TV Panels
D. Freeman
Photon Dynamics, USA

The television application for LCD displays has spawned new andcomplex pixel designs to im-prove viewing angle, brightness, and blacklevel performance. These new pixel designs will be in-troduced in
combination with a comparison of the resulting impact to leading arraytest technologies. Arguments will be presented to conclude that arrayelectrical test using electro optic Voltage Imaging technology has asustainable operating advantage over competing test technologies.
FMC4 - 2
9:20

In-Line Automatic Defect Inspection and Repair
Method for Possible Highest Yield TFT Array
Production
H. Honoki, N. Nakasu, T. Arai, K. Yoshimura, T. Edamura
Hitachi, Japan

We have developed an automated circuit defect inspection and repair
method that can be used to improve the yield ratio of Thin Film
Transistor substrates for liquid crystal displays. The method focuses oncorrecting resist patterns after the development process to ensure
shape regularity. We built a prototype system and confirmed that themethod is valid. This method can be used to produce a high yield of
TFT-LCD at a low cost and eliminate defects.
FMC4 - 3
9:40

Introduction of the New Electrical Test Method for
LCD Cell Manufacturing Process
Y. Miyake, K. Chikamatsu, M. Goto, J. Mizoguchi
Agilent Techs. Int. Japan, Japan

We propose a new electrical test method bringing repeatable andunambiguous test results which solves the drawback of the current
lighting test for LCD Cell manufacturing process. This paper shows thebasic scheme and the wide test coverage for cell process defects of thistest method, and at last gives the examples of the actual measurement
result.

80

Thursday
FMC4 - 4
10:00

December 7
Enlargement of Large Scale Photo Mask and Multi
Tone Mask
S. Kanai
HOYA, Japan

Improving placement accuracy is technical challenge with upsizing of
LSPM (Large Scale Photo Mask). SLM (Stacked Layer Mask) which has
HT (Half Tone) film is a sort of MTM (Multi Tone Mask) and the keyfactor for decreasing the number of PEP (Photo Engraving Process). As
a LSPM maker, to solve these technical challenges will contribute to theincrease of production efficiency and improving the yield late of LCD
production process.
----- Break -----

10:40 - 12:20

Ohmi 8

FMC5: Manufacturing Technologies (2)Chair:
Co-Chair:
FMC5 - 1:
10:40

K. Sarma, Honeywell Int., USA
Y. Ukai, Sony, Japan
Invited Regional TFT LCD Manufacturing Equipment
Trends for Large Glass Substrates
C. Annis
DisplaySearch, Japan

TFT LCDs are manufactured primarily in the 4 regions of Japan, Korea,
Taiwan and China. Recently local equipment industries have arisen inline with the ever increasing demand for continuous on-site support andto reduce costs and risks associated with shipping huge machines forlarge glass processing. Furthermore, machine price competition has
helped local equipment companies successfully enter multiple markets.
This paper presents research results, which investigate investment byregion, local equipment infrastructure and future trends.
FMC5 - 2:
11:00

Invited Development of Laser Annealing Technology
and System in Application of Low Temperature Poly
SiliconD. H. Kim, D. J. Kim
KORNIC Syss., Korea

LTPS technology using a high power laser have been widely applied to
TFTs for liquid crystal, organic light emitting diode display, driver circuit
for system on glass. In this paper, we report the recent result of ourdevelopment with conventional excimer laser and frequency doubled
YAG laser annealing system. The KORONA GLTP annealing system
which uses a high powered green laser as a light source has
successfully demonstrated the lateral grown large p-Si grains byoverlapping exposure.

81

Thursday
FMC5 - 3
11:20

December 7
Performance of Solid Green Laser Annealing System
for LTPS TFTs
K. Nishida, R. Kawakami, J. Izawa, N. Kawaguchi,
F. Matsuzaka, M. Masaki, M. Morita, A. Yoshinouchi,
Y. Kawasaki
Ishikawajima-Harima Heavy Ind., JapanWe developed the laser annealing system using the new pulsed green
laser of 261W(5kHz) and 75.5mJ/pulse(2kHz). We confirmed thatenergy margin of this system was much wider than that of excimer laser,
and that a substrate scanning speed when using top-flat beam was 2 〜
4 times as fast as that when using gaussian beam. It was found thatlarge grains were formed by using s-polarized beam, and that small
grains with good uniformity were formed by using p-polarized beam.
FMC5 - 4
11:40

Withdrawn

FMC5 - 5
12:00

Fabrication of Thin Film Transistor Arrays Using
Electrostatic Inkjet Printing
K. Sugi, H. Nakao, Y. Hara, I. Takasu, Y. Nomura,
I. Amemiya, S. Uchikoga
Toshiba, JapanThe electrostatic inkjet printing technique was adapted to fabricate an
active matrix backplane for the first time. This technique has theadvantage of fine patterning as compared to piezoelectric inkjet,
because kinetic energies of droplets are increased by electric field.
Using this technique, we have developed TFT arrays with desirable
shape, high accuracy of position, and matrix with the interlayer.
Electrostatic inkjet printing is a technique available for fabricating anactive matrix backplane.
----- Lunch -----

82

Thursday

December 7

14:00 - 15:20

Ohmi 9

FMC6: Materials
Chair:
Co-Chair:
FMC6 - 1:
14:00

C. C. Lee, ITRI, Taiwan
T. Unate, Seikisui Chem., Japan
Invited Development of SiO2 Dielectric Layer Formed
by Low-Temperature Solution Processing
T. Kodzasa, S. Uemura, K.Suemori, M. Yoshida,
S. Hoshino, T. Kamata
AIST, Japan

We have developed a technique to prepare a SiO2 gate dielectric layer
by low temperature solution process using UV-ozone oxidization
reaction. The prepared SiO2 film showed very flat surface and excellent
dielectric properties. As maximum process temperature was below
200°C, it is possible to prepare the SiO2 dielectric layer on a plastic
substrate. This newly developed solution process of a SiO2 film is usefulto prepare a gate dielectric of a printed TFT.
FMC6 - 2
14:20

New Column Spacer with Wide Margin for Cell Gap
DefectM. Suezaki, T. Takahashi, Y. Nishimura, N. Hanatani,
K. Kawamura, T. Matsukubo, S. Kobayashi, A. Nakasuga
Sekisui Chem., Japan

Some defects of LCD panels, for example gravity defect and cold bubble
happen from difference of thermal expansion coefficient between liquid
crystal and spacer. However, our cell gap simulation showed that elastic
modulus of spacer greatly influences to happen these defects.
Therefore, we tried to control elastic modulus of column spacer andverified that these defects are reduced by using low elastic modulus
column spacer.
FMC6 - 3
14:40

The Effect of Adding Plasticizer into Coating
Photoresist to Improve the High Speed Coating
Property
S. Takahashi*, J. Shimakura*, S. Kurihara**
AZ Elect. Marerials, Japan**
Kumamoto Univ., Japan*The higher coating speed is required to photoresist for slit coating
method. Authors studied the effect of the matrix compounds to improvethe coating speed from the point of view of film thickness uniformity.
Methyl stearate showed two good effects to make improved photoresist.
One was the improving film thickness uniformity of diluted photoresist.
The other was the reduction of dispense volume of photoresist. Authors
confirmed that the evenness of the photoresist film surface was
improved by adding the matrix compound from AFM observation.

83Thursday
FMC6 - 4
15:00

December 7
TMAH Developer Recycling Technology for LCD
Manufacturing
M. Kikukawa
Nagase CMS Tech., Japan

Recently, the membrane separation technology applied as a recycling
technology of the TMAH developer usage in the TFT-LCD
manufacturing. Also, we are developing the complete Recycling fromwaste of the TMAH developer. However, there are a lot of problems to
the recycling technology that the accelerated requirements for larger
substrate sizes and high-resolution in the LCD industry during the past
several years. In order to reduce waste in the photolithography process
as well as the global environmental load, we think that it is necessary tocooperate with the LCD manufacturers and the photo-resist
manufacturers and the developer manufacturers the development
system manufacturers and us.

Author Interviews
18:40 – 19:40

14:00 - 17:00

Ohmi 5-7

Poster FMCp: FPD Manufacturing, Materials &Components
FMCp - 1

High Speed and Sensitivity Array Tester for LTPSTFT LCD and OLED
K. Chikamatsu, Y. Miyake, T. Fujisaki, M. Goto,
J. Mizoguchi
Agilent Techs. Int. Japan, JapanThe high speed and sensitivity array tester has been developed andutilized for mass-production of advanced LTPS LCD (SOG/COG). It
realizes fast enough TACT enabling 100% inspection with better than
1fF sensitivity. Its superior sensitivity is demonstrated in MURA
detection of an OLED panel. In addition, a test solution for small-sized
COG devices, for which array test has been rarely done due to probing
difficulty, is shown with the excellent defect detection capability.
FMCp - 2

Rubbing MURA Detection Method with High Speedand High Sensitivity Using New Ellipsometer
H. Murai, K. Ekawa, J. Takashima, H. Naito,
N. Nakatsuka
OMRON, Japan

We have developed the new ellipsometer that can measure
ellipsometric parameters along a line on a sample in one measurement
using a slit beam and a CCD liner sensor. It can sensitively measure aline profile of anisotropy using data analysis for generalized
ellipsometry. Our ellipsometer is suitable for rubbing MURA detection
with high speed and high sensitivity.

84Thursday
FMCp - 3

December 7
Ion Beam Irradiation System for LC Alignment
ProcessT. Matsumoto, N. Hattori*, Y. Matsuda, M. Tanii,
M. Konishi, Y. Andoh, Y. Iimura*Nissin Ion Equipment, Japan*Tokyo Univ. of A&T, Japan

We have developed an ion beam irradiation system to control liquid
crystal (LC) alignment for LC display production and investigated its
performance such as the spatial uniformity of the ion beam. The spatial
distributions of current density, incident angle, divergence angle of theion beam, and the substrate potential are shown to be quite uniform.
We successfully demonstrate that a large-sized test panel fabricated by
the present system shows almost comparable display quality to that bya conventional rubbing method.
FMCp - 4

Test Method of Plastic Sealant on Flexible LCD
C. C. Hsiao, Y. C. Liao, K. H. Chang, S. Y. Fuh,
D. W. Lee, Y. A. Sha, P. J. Su, C. H. Hsieh, J. W. Shiu,
W. Y. Cheng, J. C. Yang, K. L. Lo, K. C. Lee, Y. P. Chang
ITRI, Taiwan

In this work, we provided a novel test method to verify the sealingmaterials for flexible LCD. The ultraviolet type curing sealing material
with low process temperature was suitable for flexible LCD cell
assembly. We also proposed the sealing materials which passed 13200
times bending test within 20 mm curvature. Results in this work could
accelerate the application of plastic substrates on portable TFT-LCD.
FMCp - 5

A Handling Method for Flexible Display -Deformation
Control of PC film
W. Y. Cheng, K. L. Lo, Y. A. Sha, P. J. Su, C. H. Hsieh,
K. H. Chang, C. C. Hsiao, J. W. Shiu, S. Y. Fuh,
Y. C. Liao, J. C. Yang, D. W. Lee, K. C. Lee, Y. P. Chang
ITRI, Taiwan

We have demonstrated a handling method for flexible display bycontrolling the deformation of PC film. To avoid the deformation of PC
film carried on a holder to obtain a well-developed color filter, the issueof stress release during color filter development is very important. In thisarticle, two kinds of handling methods have been compared to explore
the influence of PC deformation in the accuracy of superposition
between different color layers that usually occurred during color filter
development.

85Thursday
FMCp - 6

December 7
Low Temperature Colour Filter Resist for Flexible
Displays
G. de Keyzer, D. Hoelzle, L. Craciun*, S. Homma**
Ciba Specialty Chem., Switzerland*Ciba Specialty Chems., USA**
Ciba Specialty Chems., Japan

By replacing the methacrylate cross linker in a standard pigmented
colour filter photo resist it became possible to lower the drying
temperature to maximum 50°C and leave out the post bake. This
enables the possibility to produce a colour filter directly on an E-paper
display or on a plastic substrate. The material will also be optimised forthe use in ink jet processes.
FMCp - 7

Optimum Design Characteristics of a Direct Type
Backlight Unit
M. S. Lee, Y. S. Oh, S. Y. Kim, J. Y. Lee
BOE Tech. Group, Korea

We focused on improving of the optical efficiency in the direct type
Backlight Unit. We could achieve the optical efficiency by reducing the
thickness of BLU and making the prism shapes on a reflection sheet.
Raised efficiency made if possible to reduce the numbers of lamps
used.
FMCp - 8

Nano-Sized Yttria Protective Coatings for Flat
Backlight Lamps
S. K. Evstropiev, J. S. Park, T. H. Park, S. H. Cho,
D. H. Jung
Samsung Corning, Korea

An investigation reports about the preparation of yttria nano-sized
coating on the glass and on the surface of multi-component phosphor
layer by simple and industrially available spraying of acidic aqueous ormixed water/alcohol solutions of yttrium salt. This method allows
forming very small (diameter of particles less than 15 nm) yttria
particles with narrow size distribution or very thin (less than 15-20 nm)
continuous protective coatings for flat backlight lamps.
FMCp - 9

Design of LC Fresnel Lens and Its Applications
M. Tada, K. Shibata, J. Miyashita, I. Fujieda
Ritsumeikan Univ., Japan

We propose to replicate a Fresnel lens structure on an ITO-coatedsubstrate, form a cell with another ITO-coated substrate, and fill the gap
with a liquid crystal (LC) material. An appropriate bias can create aretardation distribution similar to that of a spherical lens. As a
preparation to building such a lens, we have exposed polymer-network
LC material to UV light through a phase mask. It can modify incoming
wavefronts and we discuss its application for a backlight.

86Thursday
FMCp - 10

December 7
Efficiency Improvement of OLED Backlight for TNLCD
F. Rahadian, M. Tada, J. Miyashita, I. Fujieda
Ritsumeikan Univ., Japan

Attaching an optical film on the transparent substrate of an OLED
improves its efficiency by out-coupling the light trapped in the substrate.
We attached various prism sheets, diffuser sheets and grating films to
two types of OLEDs. A TN-LC cell was placed on such an illuminatorand an angular distribution of the output light was measured. We
obtained the best result with a combination of a prism sheet and ahighly- reflective OLED.
FMCp - 11

Thin Backlight with Electronic Control of Luminance
Angular Distribution
I. Fujieda, Y. Takagi, K. Imai, Y. Inaba, T. Fujii
Ritsumeikan Univ., Japan

Viewing angle control is desired for a small-sized liquid crystal display.
We have proposed to place a liquid crystal (LC) device between an LED
and a light-guide of a backlight. A polymer-network LC cell, an LC
phase grating, or an LC lens can be used. A bias applied to such a
device controls the angular distribution of the propagating light. Output
couplers built in the light-guide translate the changes in the propagation
angles into those of the output light.
FMCp - 12

Effects of Reshaping Micropyramids and Prisms on
the Optical Performances of Light Collimating Films
in the Field of LCD Backlight
J.-Y. Lee, K.-B. Nahm, J.-H. Ko, J. H. Kim*
Hallym Univ., Korea*
Samsung Elect., Korea

Optical performances of micro-pyramid arrays and one-dimensional
micro-prisms were simulated by ray tracing technique for the applicationof LCD backlight. The angular distribution of the luminance wasinvestigated as a function of several parameters such as the apex
angle, the refractive index, and the density. The effects of reshaping, inparticular, cutting the apex region on the optical performances were
investigated, and found that the angular distribution of the luminancearound the on-axis direction became sharper than the uncut cases.

87Thursday
FMCp - 13

December 7
A Slim and Bendable Backlight System
Manufactured by a Roll-to-Roll Continuous Process
A. Nagasawa, T. Eguchi, Y. Sanai*, K. Fujisawa**
TRADIM, Japan*Toagosei, Japan**
Kuraray, Japan

A slim and bendable backlight system has been developed by a roll-toroll continuous manufacturing process. This backlight system which wascomposed of a light guide film and an optical-patterned film was lessthan 0.3 mm in total thickness, although it was too slim to radiate
sufficiently. Then radiations of this backlight system could beaccomplished by using a new developed light guide component to
induce lights from a light source to a light guide film.
FMCp - 14

Optimized Optical Reflection Sheet as a Component
in LCD Backlight with Special Lighting Condition for
Luminance Enhancement
Y. Chen, D. K. Yoon, S. J. Lee, F. Huang, S. K. Lee
Beijing BOE OptoElect. Tech., China

A kind of new reflector with some special structure for LCD back light oflarge size are capable of enhancing the luminance outcome up to
11.4% in comparison with the existed one.
FMCp - 15

Enhancement of Luminance and View Angle by
Optimizing the Structure of Prism Sheet and the
Diffusivity of Reflective Polarizer Film
G. J. Park, T. S. Aum, D. H.Lee, J. H. Kwon, M. H. Lee*,
B. K. Jung*, H. S. Soh*
Yeungnam Univ., Korea*
LG.Philips LCD, Korea

The normal luminance and the view angle of the LCD backlight wereenhanced by optimizing the apex angle of the prism sheet and the
diffusivity of the reflective polarizing sheet. The angular luminanceprofile of the backlight unit with a changed apex angle of prism sheet
showed that the strong sidelobes lights from normal were almost
disappeared when the apex angle of the prism sheet was changed tomore than 96 degrees and also the view angle was broadened.
FMCp - 16

Color Filterless 32-in. OCB-TFT LCD
W. C. Tai, C. N. Mo, M. T. Ho, C. J. Lin, C. L. Liu
Chunghwa Picture Tubes, Taiwan

In this study, the LED was used as a backlight system for its convenientof field sequential control and 3 times frame rate of 180 Hz/sec. Basedon this structure, a good full color display is obtained in 32 inch the
Optical Compensated Birefringent (OCB) TFT LCD with NTSC 100%.
This proto type has verified its basic function in June and it has
demonstrated at Taipei FPD’06.
88

Thursday

December 7

FMCp - 17

Thin Backlight Unit with Integrated Light-Guide Film
Y. Y. Chang, P. H. Yao, Y. N. Pao, C. W. Yu
ITRI, Taiwan

Edge-lit backlight modules are applied in liquid crystal displays (LCDs)
of portable devices. A traditional backlight module, whose total
thickness is greater than 0.65 mm, uses optical sheets to increase onaxis brightness and uniformity. We have designed a new couplingelement as well as an integrated light guide film (LGF) without using
optical sheets. The total thickness of LGF can be lowered to 0.36 mm.
The slim LGF could be applied in LCDs of portable devices and future
flexible displays.
FMCp - 18

State of Polarization of Polarized-Light Backlights
H. J. Cornelissen, D. K. G. de Boer, E. Souchier*Philips Res. Europe, The Netherlands*Université Montpellier II, France

Polarized-light backlights have been made by creating micro-prisms inuniaxially stretched polymeric foils. The state of polarization of theemitted light is measured for all polar angles between 0° and 80° andazimuthal angles between 0° and 360°. The polarization vector can berotated to a desired value using a half-wave retardation foil. A newpolarized-light backlight is presented using micro-wedges instead of
micro-prisms. A first prototype already shows an efficiency gain of 1.47x
compared to an unpolarized-light backlight.
FMCp - 19

Development of Photosensitive Insulating Materials
as a Planarizing and Passivated Layer on TFT-LCDs
Y. Kusaka, S. Nakamura, K. Azuma, T. Sasaki, T. Unate,
Y. Nakatani, A. Nakasuga, K. Matsukawa*,
S. Murakami**, K. Ohkura***, T. Kikkawa***
Sekisui Chem., Japan*
Osaka Municipal Tech. Res. Inst., Japan**Tech. Res. Inst. of Osaka Pref., Japan***Hiroshima Univ., Japan

Novel photosensitive insulating materials comprised of organic
silsesquioxane (OSQ) have been developed. The OSQ had highphotosensitivity, insulating performance, transparency, and heat
resistance required as a passivation layer on TFT LCDs. In this paper,
we report about the improvement of OSQ film thickness. Our
photosensitive insulating materials could be formed thicker than 3 µm
without the independent planarization process. In addition, we could
conduct the improvement of developing rate in an aqueous solution of
TMAH.

89

Thursday

December 7

FMCp - 20

Low-Temperature Synthesis of SiO2 Insulator by ICPCVD Using Tetramethylsilane
H. Furuta, M. Furuta, T. Matsuda, T. Hiramatsu*, T. Hirao
Kochi Univ. of Tech., Japan*Kochi Casio, Japan

SiO2 insulator films were deposited at low temperature below 150°C
using organic silicon source of tetramethylsilane (4MS) and N2O
precursor by ICP-CVD method. FT-IR absorption peaks of O-H stretch,
Si-H stretch, Si-CH3 stretch were not observed in these SiO2 films.
Refractive index of SiO2 films at 100°C was 1.480. These results
indicate that SiO2 insulator films can be obtained by high-density
plasma ICP-CVD using 4MS and N2O by increasing substratetemperature to 100°C.
FMCp - 21

Negative Type Photoresist for Dome-Shaped
Protrusion in Transflective MVA ModeY. K. Kim, S. Y. Choi, J. H. Chang, S. H. Kim, H. J. Kim,
J. S. Jeong, K. C. Kim, H. C. Shin, J. H. Yoon
Sekisui Fine Chem Korea, Korea

We developed the negative type photoresist which had the domeshaped protrusion in the TMVA(Transflective multi-domain verticalalignment) mode. When using the negative type photoresist,
transmittance and pattern uniformity are excellent. But it was not used
well, because there is difficult to controlled pattern shape, CD size inproximity type exposure system. But, we developed the new material
which formed a dome-shaped protrusion such as mask size in proximity
type exposure system.
FMCp - 22

Withdrawn

FMCp - 23

Influence of Deposition Pressure on Thermal
Stability of ZnO Films Deposited by rf Magnetron
Sputtering
T. Hiramatsu*,***, M. Furuta**,***, T. Matsuda**,***,
H. Furuta**,***, T. Hirao**,****
Kochi Casio, Japan**
Kochi Univ. of Tech., Japan***
Kochi Ind. Promotion Center, Japan

Thermal stability of ZnO film deposited by rf magnetron sputtering wasinvestigated. Sheet resistance of the ZnO after post-deposition
annealing strongly depends on the deposition pressure. The OES andTDS results revealed that desorption of Zn and O2 from ZnO film deeply
related to the ion species in the deposition plasma.

90

Thursday

December 7

FMCp - 24

Applications of Self-Assembled Monolayers (SAMs)
as the Mold Lubricant
T. Takahashi, N. Nakamoto, Y. Fujita, K. Kumazawa,D. Asanuma, M. Shimada, T. Hidaka, H. Suzuki, H. Saso
Nippon Soda, Japan

We have already reported on the novel chemisorption method using atoluene solution of octadecyltrimethoxysilane (ODS), water and titanium
alkoxide to form highly-ordered self-assembled monolayers (SAMs).
Using our solution-based process, we could form the ODS-SAMs
quickly and with uniform thickness on a wide area under ambientconditions. When we applied the ODS-SAMs as lubricants for nanoscale structured molds, they showed high durability under 200 °C andlow peeling stress. And we confirmed that the ODS-SAMs could
maintain nanopatterns on substrates.
FMCp - 25

Optimization of Surface Morphology of Indium Tin
Oxide (ITO) Films Using New Sputtering Process
K. Ogawa, M. Yoshikawa, Y. G. Han*, Y. W. Beag*,
S. K. Koh*
MICRO Tech., Japan*P&I, Korea

We prepared ITO films by combining two sputtering methods, i.e., ion
beam sputtering and DC magnetron sputtering. The crystallinity of the
ITO films showed highly preferential orientation into (111) direction,
resulting in uniform and small pyramid-shaped surface morphology.
Optical and electrical properties of the developed films were closely
related to and showed very interesting characters by each preparation
parameters. We are going to suggest potential applications of the films
to new devices.
FMCp - 26

Preparation of Al Doped ZnO (AZO) Thin Films on
PC and PES Substrates
B. J. Cho, M. J. Keum, K. H. Kim
Kyungwon, Korea

We prepared the Al doped ZnO (AZO) thin film on polycarbonate (PC)and polyethersulfon (PES). The AZO thin films were prepared by Facing
Targets Sputtering (FTS) apparatus and deposited with various O2 gas
flow rate without any substrate heating. We compared the AZO thin film
deposited on PC substrate with PES substrate and the properties ofthin films were investigated. In results, we obtained the AZO thin film asa resistivity of about 8.8 × 10-4ω-cm, transmittance of over 80%.

91

Thursday

December 7

FMCp - 27

Comparative Study on Reflective Polarizers: On-axis
Properties
W. J. Jeong*, H. Pak*, K. C. Yoon*’**, S. T. Kim*,
J. C. Jung*, H. D. Park*, J. R. Park****Samsung Fine Chems., Korea**KAIST, Korea***
Chosun Univ., Korea

Comparative study on reflective polarizers, operations of which are
based on either linear or circular polarization states of light, wasperformed. It was found that the reflective polarizer based oncholesteric liquid crystals showed superior optical performances interms of reflectance and spectral bandwidth. It was shown that,
however, the dispersion properties of quarter-wave films (QWFs) could
limit the brightness enhancement performance of the polarizer andcareful consideration should be given to the selection of proper QWFs.
FMCp - 28Compensation of Color Shift in a Cholesteric LC
Polarizer by Using Stacks of a Quarter-Wave Filmwith a Low nz Value
H. Pak*, W. J. Jeong*, K. C. Yoon*’**, S. T. Kim*,
J. C. Jung*, H. D. Park*, J. R. Park****Samsung Fine Chems., Korea**KAIST, Korea***Chosun Univ., Korea

Color shift in a cholesteric liquid crystal (CLC) polarizer, i.e., abruptchange of color coordinates as a function of the viewing angle wascompensated by using stacks of a quarter-wave film (QWF) with a low
nz value. It was found that while maintaining the in-plane retardation
value unchanged, one could increase the optical path length along thedepth of the retardation film by stacking a number of QWFs in a proper
orientation.
FMCp - 29

Finite Difference Time Domain Analysis of 3-D Subwavelength Structured Array for Antireflective
Application
C. J. Ting, H. Y. Tsai, C. J. Hsu, Y. Y. Nieh, C. P. Chou
ITRI, Taiwan

Low reflectance can be obtained by both the pyramidal and conicalshapes over a broadband range. Comparing the reflectance of different
structure shapes and aspect ratios by the finite difference time domain(FDTD) method, it shows that the antireflective efficiency of the
pyramidal structures is better than that of the conical structures. The
polymer film of conical structured array was fabricated by holographic
lithography and following replicating process. The experimental results
show highly consistent with the simulation results.

92

Thursday
FMCp - 30

December 7
New Type of Anti-glare Film and Manufacturing
Process
C.-H. Yeh, C.-F. Huang, W.-Y. Lin
Far Eastern Textile, Taiwan

The new antiglare film includes a transparent substrate and at least one
resin layer. The resin layer contains particles and has surface concave
hole configuration. The surface particles will be removed by appropriate
solvent, allowing concave holes formed on the surface. The antiglare
film has high light transmittance and high clarity of transmitted images.
FMCp - 31

One-Shot Mapping System of Birefringence
Dispersion for Retardation Films
Y. Otani*, T. Wakayama*’**, N. Umeda*, K. Takashi**Tokyo Univ. of A&T, Japan**Saitama Medical Univ., Japan

An one shot mapping system of birefringence dispersion is developed
to measure both a retardation and an azimuthal angle with wavelength
dependence. Spectroscopic polarization modulation by two polarizers
and two reterders is a key technique to modulate sinusoidally theintenstiy distribution along wavenumber. Only the image ofspectroscopic intensity is sufficient to determine the retardation and theazimuthal angle, respectively. In the experiment, the retardation map of
a retardation film is shown as demonstrations.
FMCp - 32

Polarization Mapping System of Viewing Angle for
Optical Films
T. Wakayama*’**, N. Asato**, Y. Otani**, N. Umeda**
Saitama Medical Univ., Japan**Tokyo Univ. of A&T, Japan*

A novel polarization mapping system is proposed for viewing angle of
LCD’s films. It is consisted of a compensator and an analyzer in rotating
ratio of one to three. The maps of an ellipticity and an azimuth ofellipsoid are obtained with high precision. In the experiment, acommercial circular polarizer is measured at full visual spectrum from450nm to 750nm. The maps of ellipticity in 450, 550 and 650nm havedistinctive shapes, respectively.

93Thursday
FMCp - 33L

December 7
The Electrical and Optical Characteristics of TCO
Thin Films with Processing Parameters
C. H. Jeong, Y. J. Hong, H. J. Kim, K. M. Lee
Korea Univ. of Tech. & Education, Korea

Al-doped ZnO thin films were deposited on glass substrates by RFmagnetron sputtering. The Sheet resistance, roughness and opticaltransmittances were systematically investigated with various deposition
time and working pressure. As the Ar flow rate increases, the deposition
rate decreased monotonically. But, the sheet resistance does notincrease in proportional to the film thickness. When the film thickness
was fixed to 200nm regardless of Ar flow rate, as the Ar flow rateincreases, the sheet resistance was decreased.
FMCp - 34L

New Coating Method of Metallic Layer of Conductive
Ball for Anisotropic Conductive Film (ACF) Using Ni
Nanoparticle
S. J. Hong, C. J. Han, W. G. Kim, G. W. Jeong*, J. I. Han
Korea Elect. Tech. Inst., Korea*Jeong Eui, Korea

In this work, new simple method to make a conductive ball wasdeveloped. 5 nm sized Ni nanoparticle was uniformly coated onto
PMMA ball with highly adhesive force leading to successful electrolessplating of Au onto it. The surface roughness is smooth, and such a goodsurface leads to good electrical properties with low resistance of 6 ω/ball, and uniformity is also good. So, high performance conductive ball
was fabricated by using the coating of Ni nanoparticle followed by Au
electroless-plating.
FMCp - 35L

Discharge Characeteristics of a Mercury-Free Flat
Fluorescent Lamp for LCD Backlight Unit
S. M. Lee, K. G. Jeong, Y. C. Jeong*, M. G. Kwak**,S. H. Sohn
Kyungpook Nat. Univ., Korea*Hee-Sung Elect., Korea**
KETI, Korea

We developed a Flat Fluorescent Lamp with a high luminance by using
the same discharge mode as PDP. Our FFL has a simple and unigue
structure where the glass substrates are used as dielectric layers. The
panel has a striped line shape of 10 inch diagonal size. The gas
discharge characteristics under both total gas pressure and partial gas
pressure were investigated. The panel showed a maximum highluminance 8,690cd/m2 under bias of 20kHz pulse of 2.9kV.

94

Thu./Fri.

December 7/8

FMCp - 36L

High-Luminance and High-Efficacy Flat Xe Discharge
Lamp for LCD Backlights
D. I. Kang, H. S. Kim*, Ko. J. J.**, Lee. K.-W.
Myongji Univ., Korea*LuxOn, Korea**
FTLAB, Korea

In this work, highly efficient flat Xe discharge lamp with very simple
structure is presented. The emission efficacy of 82 lm/W at 9500cd/m2
was obtained, which is due to porous anodic alumina (PAA) dielectric
layer and high Xe pressure. This XeFFL lamp, which has very fast
response time and strip patterned plane parallel electrode discharge
structure, was found to be very suitable for fast blinking and areal
dimming control.
FMCp - 37L

Micro-Holographic Light Guide Plates in LED BLUs
S. R. Park, O. J. Kwon, S.-H. Song, H.-S. Lee*,H. Y. Choi*
Hanyang Univ., Korea*
Samsung Advanced Inst. of Tech., Korea

We suggest a micro-holographic light guide plate ( µ-LGP) structure forLED backlight units. Optimization in orientation of the micro-holographic
gratings is performed, leading to a characteristic function for deriving
optimal conical-angle distribution of grating direction. Micro-holographic
lithography and UV embossing are used to fabricate the micro-gratings
with different conical angles. Hot-spot and light-propagation linepatterns which were seriously occurred in LED BLUs are successfully
eliminated in our µ-HLGP, when a LED is placed at a corner of the lightguide plate.

Friday, December 8
9:00 - 10:20

Ohmi 3

FMC7: Backlight Systems (1)Chair:
Co-Chair:
FMC7 - 1:
9:00

S. Bierhuizen, Philips Lumileds Lighting, USA
M. Shinohara, Omron, Japan
Invited Performance of High Power LEDs in Display
Illumination Applications
S. Bierhuizen, G. Harbers, M. Krames
Philips Lumileds Lighting, USA

We will discuss the performance, progress and trend of High PowerLight Emitting Diodes (HP-LEDs) for backlighting and micro-display
projection applications. Main parameters for backlights are efficiency
and cost while luminance is the most important parameter for
projection, but they are driven by similar LED parameters such as drive
current, operating temperature and optical coupling efficiency.
Prospects for improving these parameters to meet the demands for thevarious illumination applications will be discussed.
95

Friday
FMC7 - 2:
9:20

December 8
Invited Thin RGB LED Light Source for LCD Monitor
and TV Backlighting
T. L. Mok
Avago Techs., Malaysia

The use of RGB LED to backlight LCD panels is a must to achieving a
superior color gamut. The tradeoffs in using RGB LED backlighting
include the efficiency and cost of assemblies. A novel chip-on-board(COB) package has been developed which combines compact and low
profile package outline with good color mixing and efficient thermal
management. This package demonstrates that COB technology is an
attractive option because of its cost effectiveness and its ability toincorporate simple electrical connections.
FMC7 - 3
9:40

Expanded Funnel-Shaped Light Guide for a PseudoWhite/RGB LEDs Display Illumination System
K. Käläntär
Nippon Leiz, Japan

An expanded optical funnel-shaped light guide for illumination of theautomotive display panel system has been developed. The light guide
has a tubular portion with a circular light introduction surface at one end
and has a flat section for illumination of the display panel at the otherend. A diffuser film and three pseudo-white LEDs are combined with themicro-structured light guide to form a display for use in the automotive
instrument panel.
FMC7 - 4
10:00

Sheetless Backlight System for Mobile Phone
G. Kurata, K. Sakurai, M. Ohira, Y. Kawabata,A. Funamoto, S. Aoyama
OMRON, JapanThe conventional light-guide requires two prism sheets and a diffusive
sheet to improve the brightness and visual quality, respectively. In thispaper, a novel pattern, grating-prism hybrid pattern, fabricated on thelight-guide to realize a sheetless backlight system is proposed. With this
proposal, the brightness and visual quality that nearly equal
conventional systems without the use of sheets were realized and the
reduction of the thickness of backlight system by 20% has beenachieved.
----- Break -----

96

Friday

December 8

10:40 - 11:40

Ohmi 3

FMC8: Backlight Systems (2)Chair:
Co-Chair:A. A. S. Sluyterman, Philips Lighting, The Nertherlands
K. Käläntär, Nippon Leiz, Japan

FMC8 - 1
10:40

Microplasma Unit with Nano-Tip Enhanced Electrode
Operated in Ar and Ne Gases for Integrated Flat Light
SourceZ.-Y. Wu, S.-O. Kim
Nat. Chiao Tung Univ., Taiwan

Microplasma devices with nano-tip electrodes have been fabricated andoperated successfully in Ar and Ne gases. The nano-tip locallyenhances the electronic field. Current-voltage characteristics of
microplasma devices have been examined by direct current bipolar
pulsed waveform with different frequencies from 2 to 20 kHz in 300 800 Torr of Ar, Ne and Ne+Ar(2%). With all the advantages, the nano-tip
enhanced microplasma technology provides possible opportunity tointegrate to flat plasma light source.
FMC8 - 2
11:00

Effect of Electrode Structure on Efficiency of Flat
Plasma Backlight
Y. Wu, Q. Li, Y. Xue
Southeast Univ., China

The electrode structure has great effect on the luminous efficiency andfiring voltage in flat plasma backlight. To optimize the electrodestructure, a way of macro-cell for investigation was proposed, thismethod had been validated and optimum electrode structure isdesigned in experiments. Luminous efficiency is improved by applying
this electrode structure.
FMC8 - 3:
11:20

Invited Physical Properties of Nano Silicon and Its
Application to Functional Image Devices
N. Koshida*,**Tokyo Univ. of A&T, Japan**Quantum14, Japan*

In nanocrystalline silicon (nc-Si), the original physical properties of bulk
silicon are totally modified due to a strong quantum confinement effect.
A significant band-gap widening induced in nc-Si leads to efficientvisible luminescence at room temperature and related photonic
phenomena. In addition to the optical effects, some useful functions
have been found out in various manners: ballistic electron emission,
thermally-induced ultrasonic emission, and bioactivity. Some topics onthese characteristics and device application studies are presented.
----- Lunch -----

97

Friday

December 8

14:00 - 14:40

Ohmi 3

FMC9: Backlight Systems (3)Chair:
Co-Chair:

K. Käläntär, Nippon Leiz, Japan
D. den Engelsen, Southeast Univ., China

FMC9 - 1
14:00

Expression of 11-Bit-Equivalent Gray Levels by
Adaptive Dimming of LCD Backlights
S. Shimizukawa, T. Shirai, H. Kamano, T. Shiga,
S. Mikoshiba
Univ. of Electro-Commun., Japan

Output luminance of an LED backlight unit for an LCD-TV wasadaptively dimmed along with input video signal in order to improve thegray scale expression capability. When the technique is adopted to an
LCD-TV having an 8-bit capability, the luminance range corresponding
to 0-31 gray levels of the original signal can be expressed with 256 graylevels. Namely, 11-bit-equivalent resolution gray scale can be obtained
for this range where a precise gray scale expression is needed.
FMC9 - 2
14:20

Properties of a Scanning Field Emission Backlightfor LC-TV
D. Den Engelsen, X. H. Li, Y. K. Qi
Southeast Univ., China

The power consumption of a scanning and 2D dimming Field Emission
Backlight Unit (FE-BLU) for LC-TV is about a factor of 1.5 larger thanthat of a conventional, stationary BLU based on Cold CathodeFluorescent Lamps (CCFLs). It was found that scanning of an FE- BLU
suppresses the motion blurring of TV-images satisfactorily. The scanfrequency of the FE-BLU should be higher than 60Hz to reduce
phosphor saturation at high luminance.

Author Interviews
17:00 – 18:00
Supporting Organizations:
The Japan Society for Printing Science and Technology
Japan Society of Color Material
The Technical Association of Photopolymers, Japan
Society of Photographic Science and Technology, JapanThe Society of Radtech, JapanThe Society of Polymer Science, JapanThe Japanese Research Association of Organic Electronics Materials
Japan Printed Circuit Association98

Thursday

December 7

Workshop on CRTs
Thursday, December 7
9:00 - 12:00

Ohmi 5-7

Poster CRTp: CRTs
CRTp - 1

Optimized Curvature Design for Improving Local andOverall Doming in Real Flat AK Mask CRT
K. M. Kok, C. C. Chao, C. T. Lau
Chunghwa Picture Tubes, Malaysia

In AK mask development for flat CRT, especially in larger screen sizeand slim tube type, both local doming and overall doming need to besolved simultaneously. A study on mask curvature design, with variousof radius of curvature, and certain range of ratio for the radius ofcurvature, we take these designs into mask displacement simulation for
local doming. Finally an experiment result which have achieved thistarget were recorded.
14:00 - 15:00

Ohmi 8

CRT1: Future CRT Technology & Market
Chair:
Co-Chair:
CRT1 - 1:
14:00

M. Maeda, Consultant, Japan
H. Y. Chen, Chunghwa Picture Tube, Taiwan
Invited The Digital, Orthogonal Scan Ultra Slim HDTVCRT System
R. L. Barbin, E. E. Doerschuk, I. Gorog*, J. Kleppinger,
R. H. Miller, A. S. Poulos, P. M. Ritt*
Thomson, USA*CAPA Tech., USA

Thomson Engineers in Lancaster conceived and demonstrated new
DOS/SLIM high deflection angle CRT systems with superb HDTV
picture performance competitive with flat panel products and allowing
improved styling options. This integrated system offers significant
advantages in Defection Yoke stored energy and manufacturability
relative to standard SLIM products. Evolving Digital Technologies areused to integrate the rotated scan, geometry, and convergence video
corrections, and a quadrupole augmented convergence system into acomplete electronics package. Figure 1 shows progressive form factor
improvements.

99Thursday
CRT1 - 2
14:40

December 7
The Future Trend of CRT Market
Y. Min, Y. Z. Zhen
IRICO Group Elect., China

CRT still have fairish competitive power. One side, it have very excellent
display quality, on the other side, it’s price is much lower than other.
CRT still has wide market content because the differences between
zones make the requirements different. The digital TV is a huge
opportunity for CRT. There is a new competition situation in CRT
industry. Some factory quitted and the rest still take active part intechnical improvement and cost control.
----- Break -----

15:40 - 17:10

Ohmi 8

CRT2: Cathode & Mask
Chair:
Co-Chair:
CRT2 - 1:
15:40

E. E. Doerschuk, Thomson, USA
T. Saito, Tokyo Cathode Lab., Japan
Invited Oxide Cathodes for Today and Tomorrow
S. YamamotoNat. Inst. of Advanced Ind. S&T, JapanThe historical background as well as the present and future prospectsof oxide cathodes is reviewed. Oxide cathodes will still play a major roleas thermionic electron sources because of their high reliability and low
production cost. A deeper understanding of the electron emission
mechanism still remained unclear may be able to further enhance thecapability of oxide cathodes in the future.
CRT2 - 2
16:10

Anti-Doming Design Improvement Based on
Computer Simulation
K.-D. Ha, J.-H. Lim, H.-S. Yoon, S.-H. Ji
Samsung SDI, Korea

In this research, a system of CRT heat transfer simulation has beendeveloped and applied to anti-doming design of each component. The
glass envelope, magnetic shield, mask-frame assembly and suspension
system are all included in radiation dominant heat-transfer simulation.
Some examples of detailed effects of design components on antidoming performance are introduced. A unique formed mask design isdevised and successfully applied into the development of one of value
engineering models.

100

Thursday
CRT2 - 3
16:30

December 7
Optimized Design of Mask Curvature to Improve
Mechanical Properties of CRT
W. Lin, G. Xu, W. Liu
CPTF Optronics, China

In this study, by using computer simulation and fitting, we optimize thecurvature design of CRT’s Mask-Flame (MF) assembly to improve its
shock-resistance and other quality. With this method, the MF’s corner
structure is strengthened and spring-back degree is lessened. And theresult of tube’s shock and drop test prove that the new design iseffective, compared with conventional design.
CRT2 - 4L
16:50

A New Architecture for Super Slim Tubes
J. Meijer, S. Dorel*
LG.Philips Displays, The Netherlands*
FEI, The Netherlands

Motivated by ever more stringent performance requirements, a newarchitecture for SuperSlim CRT was developed. Characteristic for thisarchitecture is the short length of the electron gun, and the small
distance between gun and DY. The deflection angle can be kept to aminimum. Interestingly, both deflection-related and gun-related
performance properties benefit from the new architecture.
----- Break -----

17:20 - 18:40

Ohmi 8

CRT3: Electron Gun
Chair:
Co-Chair:D. den Engelsen, South East Univ., China
S. Shirai, Hitachi Displays, Japan

CRT3 - 1
17:20

A New Concept Electron Gun for Large Screen Super
Slim Tube
M. C. Bae, C. R. Byon, S. J. An, Y. H. Jeong, N. Arimoto
Samsung SDI, Korea

No abstract was submitted.

101

Thursday
CRT3 - 2
17:40

December 7
Short Gun Design for 21-in. Ultra-Slim CRT
S.-H. Jo, J.-H. Kwon, Y.-S. Nam, J.-Y. Choi, K.-B. Son
LG.Philips Displays, Korea

A trend in display market has been rapidly moving toward flat display
devices that occupy less space. In this point of view, CRT has several
disadvantages such as bulky volumes and heavy weights. To cope withthese issues, 21” Ultra-slim project has been initiated. Consequently,
The short electric gun has been developed to minimize the overall tube
length of 21” Ultra-Slim. However, 30% focus deterioration is expectedby wide deflection angle, low anode voltage for decreasing deflection
current and gun length reduction. To improve the focus performance, wehave designed a new electron gun with large equivalent main lensdiameter in horizontal direction and flat beam triode in vertical direction.
As a result, we could achieve equal focus performance to 21” Superslim.
CRT3 - 3
18:00

Electron Gun Design for Super Slim CRTs
C. T. Chan, P. H. Chong, C. C. Chao
Chunghwa Picture Tubes, Malaysia

With the trend of CRT TV market, Super Slim CRT has become one of
the mainstreams. In order to keep pace with consumer preference, westart to develop with the size at 21-inch and 29-inch. Due to DY wide
deflection magnetic field, the spot performance at the screen peripheral
region will be much deteriorated. So we need to improve the electron
gun design to meet the requirements for uniform spot performance.
CRT3 - 4
18:20

Halo Reduction in 17-in. Super Real Flat Low PowerCRT
J. Yang, S. Lin, Y.-K. Ma
CPTF Optronics, China

Low power consumption color display tubes (CDT) are the trend of thecurrent CRT market. However, using lower anode voltage to reduce
power consumption causes halo and deterioration of the tube
performance. This paper describes the newly designed electron gun ofa 17-inch SRF low power CRT which has improved electron optics
design, optimized gun assembly-precision control and mount sealing
process. The result is a much reduced halo problem distribution in mass
tube production below 1000PPM.

Author Interviews
18:40 – 19:40
Supporting Organizations:Technical Group on Information Display, ITE
Technical Commiittee on Electronics Information Displays,
Electronics Society, IEICE

102

Wednesday

December 6

Workshop on Plasma Displays
Wednesday, December 6
13:20 - 14:40

Ohmi 8

PDP1: Protective Layer (1)Chair:
Co-Chair:
PDP1 - 1:
13:20

G. Oversluizen, Philips Res. Labs., The Netherlands
H. Kajiyama, Univ. of Tokyo, Japan
Invited The Physics and Processing of the PDP
Protective Layer
H. Tolner
South East Univ., China

In order to timely trigger the addressing discharge, and reduce theaddressing jitter, sufficient exoelectrons must be emitted from the MgO
surface. Metastable ions are long dead at the moment of the addressing
pulse, and therefore cannot be a source of priming electrons.
PDP1 - 2
13:40

Destruction and Recrystallization Dynamics of MgOLayer in PDP by Quantum Chemical Molecular
Dynamics Methods
M. Kubo*’**, H. Kikuchi*, H. Tsuboi*, M. Koyama*,
A. Endou*, H. Takaba*, C. A. Del Carpio*, H. Kajiyama***,T. Shinoda***, A. Miyamoto**Tohoku Univ., Japan**
JST-PRESTO, Japan***Univ. of Tokyo, Japan

Our original molecular dynamics and quantum chemical molecular
dynamics codes were applied to the destruction dynamics of the MgO
protecting layer in the plasma display panel. Our results suggest thatthe recrystallization process of the MgO protecting layer is very
important to discuss the stability of the MgO protecting layer in addition
to the destruction process. Moreover, the self-organized formation of
the nano-dot structure was observed on the MgO(011) and MgO(111),
which was not detected on the MgO(001).

103

Wednesday
PDP1 - 3
14:00

December 6
A Theoretical Analysis of Mid-Gap States of MgOProtecting Layer in PDP
A. Endou*, H. Kikuchi*, H. Tsuboi*, M. Koyama*,
H. Takaba*, M. Kubo*’**, C. A. Del Carpio*,
H. Kajiyama***, T. Shinoda***, P. Selvam*, A. Miyamoto**Tohoku Univ., Japan**
JST-PRESTO, Japan***Univ. of Tokyo, Japan

Our original tight-binding quantum chemical molecular dynamics(QCMD) simulator was applied to the analysis of the mid-gap states of
the undoped MgO with and without the oxygen defects and of doped
MgO protecting layer in PDP. Our method successfully re-produced theexperiment regarding dopant levels as well as the mid-gap level in MgOmodel with the oxygen defects. This indicates that our method is a very
effective tool for the detail analysis of the electronic structures of MgOprotecting layer.
PDP1 - 4L
14:20

Ion-Induced Secondary Electron Emission from
12CaO・7Al2O3 Electride
S. Webster, M. Ono-Kuwahara, S. Ito, K. Tsutsumi*,
G. Uchida*, H. Kajiyama*, T. Shinoda*
Asahi Glass, Japan*
Univ. of Tokyo, Japan

A significant secondary electron emission, SEE, by Xe+ was observedfor 12CaO・7Al2O3 crystals with ’F+-like center’ concentration, N, of
1019 to 1021 cm-3 (so-called C12A7 electride) prepared using aluminumor carbon as reducing reagents. The SEE yield by Xe+ was increased
with increasing N and reached -0.2 at N=1021 cm-3, which may be
attributed to F+-like center inherent to C12A7 electride, that gives asmall work function of 0.6-2.1 eV to the present material.
----- Break -----

104

Wednesday

December 6

15:00 - 16:20

Ohmi 8

PDP2: Protective Layer (2)Chair:
Co-Chair:H. Tolner, Southeast Univ., China
M. Uchidoi, Pioneer, Japan

PDP2 - 1
15:00

Evaluation of Discharge Voltage in AC PDPManufactured under Vacuum after MgO Deposition.
K. Uchida*’**, G. Uchida**, T. Kurauchi*, T. Terasawa*,
H. Kajiyama**, T. Shinoda***
ULVAC, Japan**Univ. of Tokyo, JapanA new PDP manufacturing method in which processes, such as
deposition of MgO, and sealing of front and rear plate, are carried out insuccession under the vacuum condition is proposed. We haveevaluated the firing voltage by using a 4-inch PDP test panel. The
measured result shows that the firing voltage is stabilized in a brief timefrom the beginning of the measurement. The developed method is
considerably effective for decreasing the aging process time.
PDP2 - 2
15:20

Characteristics of Doped MgO Layer Depositedunder Hydrogen Atmosphere
K. H. Park, Y. S. Kim
Hongik Univ., Korea

Characteristics of MgO layer deposited under hydrogen atmosphereand doped impurities were investigated. Hydrogen gas was introduced
during e-beam evaporation coating process of MgO layer and its effects
on microstructure, cathode luminescence spectra, discharge voltages
and effective yield of secondary electron emission were measured. The
results indicated that a combination of hydrogen atmosphere for coatingwith doped elements enhanced the luminance efficiency and discharge
delays of the panels more significantly.
PDP2 - 3
15:40

Discharge Characteristics of MgO Layer Formed by
Aqueous Solution Process
H. N. Choi, Y. S. Kim
Hongik Univ., Korea

In this study, magnesium oxide thin film was prepared via aqueous
solution route of salt precipitation process. Flake type film was formed
from the process. In addition, doping elements were added during thefilm forming process in order to enhance the secondary electron
emission characteristics of the film. The films formed werecharacterized using SEM, XRD, and cathode luminescencemeasurement. The results indicate that MgO film can be formed via theaqueous solution process successfully, of which characteristics arecomparable to those of MgO film formed by e-beam evaporation
process.

105

Wed./Thu.
PDP2 - 4
16:00

December 6/7
Analysis of Priming Source for Addressing
Discharge of AC PDP
Q. Yan, N. Kosugi*, Y. Oe*, H. Tachibana*, L. Weber**
PPDLA, USA*Matsushita Elec. Ind., Japan**
Consult., USA

Exo-electron emission from MgO is a key priming source for addressing
discharge of AC plasma display panel. We have investigated the exoelectron emission from MgO protective layer in AC plasma display
panel. A technique of directly measuring the exo-electron emission wasdeveloped on AC PDP. The measured exo-electron emission is proved
to be proportional to the reciprocal of the statistical delay of addressing
discharge.

Author Interviews
18:00 – 19:00

Thursday, December 7
9:00 - 12:00

Ohmi 5-7

Poster PDPp1: PDP(1)PDPp1 - 1

A New Sustain Driving Method with High ImpedanceState for AC PDP
Z.-H. Liang, Y.-D. Li, C.-L. Liu
Xi’an Jiaotong Univ., China

A new sustain driving method with high impedance state for AC PDP isdeveloped. In this method, the voltage between X and Y electrodes of
AC PDP has three states during one sustain cycle, positive voltage
state, high impedance state and negative voltage state. The highimpedance state occurs between the positive voltage state and thenegative voltage state. The experimental results show that the minimum
sustain voltage can be decreased and the sustain voltage margin canbe increased.
PDPp1 - 2

Equivalent Circuit Model and Characteristic
Parameters for AC PDP Cells
Z.-H. Liang, C.-L. Liu, Z.-J. Liu
Xi’an Jiaotong Univ., China

In this paper, an equivalent circuit model for discharge cells ofalternating current plasma display panel is developed. Three internal
discharge characteristic parameters, breakdown voltage of discharge
gap, minimum sustain voltage of discharge gap and discharge cell
capacitance ratio, are proposed. The formulas for expressing external
discharge characteristic parameters by internal discharge characteristic
parameters are derived. The experimental method for measuring
internal characteristic parameters is developed and the measurement
results for a “macroscopic” cell are presented.
106Thursday
PDPp1 - 3

December 7
Reset Waveform for Large-Sustain-Gap Structure in
AC PDPs
S. Kim, T. Y. Song, J. Y. Kim, S. H. Lee, J. H. Seo*,
B. J. Shin**Inha Univ., Korea*
Univ. of Incheon, Korea**Sejong Univ., Korea

In this paper, we present a new reset waveform for a large-sustain-gap
structure in ac PDPs. With this scheme, we obtained 60V minimum
address voltage and 145V maximum address voltage in 250µm and350µm gap structures. By using the square reset pulse instead of theconventional ramp pulse reset, it is expected low contrast ratio. To
improve contrast ratio, the reset waveforms in each subfield are
replaced by the selective erase waveforms except the 1st subfield.
PDPp1 - 4

Reset Waveform with Negative Ramp Pulse in AC
PDP for Improving Addressing Characteristic
H. R. Choi, S. W. Jung, M. H. Oh, J. W. Kang
Dankook Univ., Korea

Conventional reset waveform applied to the commercial PDP uses a
positive ramp pulse. This paper proposes a new reset waveform withnegative ramp pulse. The reset waveforms, especially focused on ramp
area, were examined with 2 dimensional fluid simulation code. The
proposed negative reset waveform showed much lower ignition voltage(- 70V) as compared with the conventional reset waveform.
PDPp1 - 5

Driving Waveform for Improvement of Gray Scale
Capability in Low Luminance Levels in AC PDP
E. Y. Park, S. B. Lee, Y. G. Han, S. H. Jeong, C. G. Son,
N. L. Yoo, Y. J. Hong, S. J. Jung, J. H. Kim, M. W. Moon,
P. Y. Oh, K. B. Song, B. H. Hong, E. H. Choi
Kwangwoon Univ., Korea

The gray scale is controlled by the number of discharge pulse at sustain
period in alternating current plasma display panel. At the low gray scale,the IR intensity at each sustain pulse is important in AC-PDP. But the IR
intensities of the first and second sustain pulse are usually smaller thanthose of the other sustain pulses. Thus, we could obtain the driving
waveform by which the first IR intensity is similar to those of the othersustain pulses.

107Thursday

December 7

PDPp1 - 6

Modified Ramp-Reset Waveform Robust for Ambient
Temperature in PDP
S.-K. Jang, H.-S. Tae, E.-Y. Jung*, K.-J. Suh*, E.-G. Heo*,
B.-H. Lee*
Kyungpook Nat. Univ., Korea*
Samsung SDI, Korea

The changes in the discharge characteristics such as a firing voltage
and IR emission among the three electrodes are examined relative tothe ambient temperature and working gas pressure based on the Vt
close-curve analysis method. The reset discharge does not occur
sufficiently at high temperature due to the increase in the firing voltage,
thereby resulting in accumulating the sufficient wall charges on theaddress electrode. As a result, a misfiring discharge often occurs at
high temperature. To reduce the misfiring at high temperature, modified
reset waveform that can maximize the plate gap discharge toaccumulate the sufficient wall charges on the address electrode is
proposed. As a result of adopting the proposed reset waveform, it isobserved that stable address discharge is produced irrespective of theambient temperature variation.
PDPp1 - 7

New Reset Waveform with Dual-Slope Falling Ramp
for Reduction of Reset Period and Low Address
Voltage in AC PDP
J. K. Lim, K.-H. Park, B.-T. Choi, H.-S. Tae
Kyungpook Nat. Univ., Korea

The new reset waveform with dual-slope falling ramp is proposed toreduce a reset-period without deteriorating the address discharge
characteristics for the full HD AC-PDPs. The proposed reset waveform
has two different voltage slopes during a falling reset-period. The higher
X-bias voltage is additionally applied to the X-electrode so as to adjust
the reset discharge during a part of the first voltage-slope period. As aresult, the proposed dual-slope reset waveform can reduce the falling
reset period by 50 %, compared to the conventional falling reset-period.
PDPp1 - 8

Bipolar Sustain Waveforms for Improving Luminanceand Luminous Efficiency in AC PDPs
B.-T. Choi, J. K. Lim, K.-H. Park, H.-S. Tae, J.-H. Seo*,
S.-H. Lee**
Kyungpook Nat. Univ., Korea*
Incheon Univ., Korea**Inha Univ., Korea

To improve the luminance and luminous efficiency in AC-PDPs, thebipolar sustain waveforms, which had the positive and negative pulse,
were proposed and their discharge characteristics were examined. By
using the bipolar sustain waveform that could control the ions effectively
during a sustain discharge, the ratio of the MgO cathode condition wasincreased, compared with the conventional sustain waveform. As aresult of adopting the bipolar sustain waveforms, the luminance andluminous efficacy were improved by 12% and 5.3%, respectively.
108

Thursday
PDPp1 - 9

December 7
Relationship between Address Power and Address
Data in Color PDP
X.-N. Zhang, C.-L. Liu, Z.-T. Tu, J. Zhang, Y.-D. Li
Xi’an Jiaotong Univ., China

Address equivalent circuit model and address power expression aredeveloped to detect and calculate address power exactly. It considers
that address power is mostly caused by switch of MOSFET in address
IC, which causes difference voltage variety on address equivalentcapacitors. The experiment results show that average picture level has
no influence on address power. Address power is proportional to thechange rate of subfield data between adjacent lines in vertical direction
and between adjacent columns in succeeding lines.
PDPp1 - 10

Relationship between IR Emission of Reset
Discharge and Image Retention in AC PDP
Y. S. Do, K. C. Choi
KAIST, Korea

The temporal image sticking and image retention time were investigatedin accordance with the slopes of the ramp pulse during a reset ramp-up
and down period. For the measurement of luminance, IR peak time, and
CIEXYZ stimulus value, the image retention time was increased with anincrease of the slopes of ramp pulse. According to the results, thetemporal measurement of luminance, IR peak time, and CIEXYZ
stimulus value is suitable in the investigation of the dark image retention
time.
PDPp1 - 11

Optimization of Geometries and Study of Optical
Properties in PDP Cells
S. W. Jung, H. R. Choi, M. H. Oh, J. W. Kang
Dankook Univ., Korea

The detailed studies regarding to the front and rear panel geometries
and optical properties of composed layers were needed to improve theluminance and efficiency. 3-dimensional optical code was used toanalyze the variation of geometries and the changing of opticalproperties. The visible light distributions and illuminance results were
simulated depending on the bus electrode position, ITO geometries,
optical properties of dielectric layer and slope of barrier rib. Simulation
results will benefit designing of new cell structure and quantification ofvisible right out of cell.

109

Thursday

December 7

PDPp1 - 12

Discharge Characteristics in Accordance with Spatial
Location on Sustaining Electrode in AC PDP
S. B. Lee, E. Y. Park, P. Y. Oh, C. G. Son, Y. G. Han,
S. H. Jeong, N. L. Yoo, S. J. Jeoung, J. H. Kim,
Y. J. Hong, K. B. Song, M. W. Moon, B. H. Hong,E. H. Choi
Kwangwoon Univ., Korea

We have investigated the discharge characteristics in accordance withspatial location on sustaining electrode in AC-PDPs. With Xe contentsof 4 %, the luminance and efficacy of midbus and inbus structures arelower than outbus’s one. And the difference of luminance and efficacy
among the outbus, midbus and inbus structure is getting small with highsustaining voltage, because of effect of blocking the IR emission by bus
electrode in a cell. However, with Xe contents of 15 %, the efficacy of
midbus structure is higher than the others. And it is noted that the static
voltage margin is also higher than other structures. Td of the inbus
structure showed 7 and 30 % shorter delay than the outbus structurewith Xe contents of 4 and 15 %, respectively.
PDPp1 - 13

Withdrawn

PDPp1 - 14

Spatiotemporal Analysis of Excited Xe* (1s5) Atoms
in Counter Sustain Structure Cells with Twin
Auxiliary Electrodes by Laser Absorption
Spectroscopy
M. Hashimoto, J. S. Oh, K. Tachibana, H. Asai*,
K. Kikuchi*, S. Sakamoto*
Kyoto Univ., Japan*Noritake, Japan

Spatiotemporal behaviors of the excited Xe*(1s5) atoms in a countersustain structure microdischarge cell with a twin auxiliary electrodewere investigated by laser-absorption spectroscopic technique. As theprevious results of the near-IR emission, it was improved the emission
intensity with a proposed driving method for the auxiliary electrodes
which connected to neighboring sustain one. With this driving condition,
we investigated the spatiotemporal behavior of the Xe* atoms andestimated the efficiency of the related vacuum-ultraviolet photon
emissions in this paper.

110Thursday

December 7

PDPp1 - 15

Estimation of Efficient Sustain Frequency Using
Decay Rate Constant of Xe Metastable Atoms for XeNe Gas Mixtures
J.-S. Oh, M. Hashimoto, K. Tachibana
Kyoto Univ., JapanAn efficient sustain frequency was estimated by the decay
characteristics of the excited Xe*(1s5) atoms with Xe-Ne binary
mixtures for PDPs. The collisional decay rate constant was investigatedusing by µLAS. They are 3.64 µs for the Xe(5%), 1.95 µs for theXe(10%), and 1.41 µs for the Xe(15%) with the Xe-Ne binary at the totalpressure of 450 Torr. With the measured values and previous frequency
study, we proposed efficient sustaining frequency for different gas
condition.
PDPp1 - 16

Temporal Evolution of Optical Emission Spectra fromAC PDP
G. Uchida, H. Kajiyama, T. Shinoda
Univ. of Tokyo, Japan

Here is presented experiment on temporal evolution and spatial
distribution of optical emission spectra from AC-PDP. Measurementshows that the relative emission intensity INe(585nm)/IXe(823nm), which isinduced from Ne and Xe atom, drastically changes in each discharge
stage and each spatial region. There is also considerable effect ofdischarge voltage and gas pressure on INe(585nm)/IXe(823nm). The timeresolved measurement of optical emission spectra is useful toinvestigate the electron temperature in PDP.
PDPp1 - 17

Measurement of Spatiotemporal Behavior Excited Xe
Atom Density in 1s5 in Accordance with Various
Barrier Ribs in AC PDP
S. H. Jeong, P. Y. Oh, M. W. Moon, K. B. Song,Y. G. Han, C. G. Son, S. B. Lee, N. L. Yoo, Y. J. Hong,
S. J. Jung, J. H. Kim, E. Y. Park, B. C. Park, B. H. Hong,E. H. Choi
Kwangwoon Univ., Korea

In this study, we have measured the spatiotemporal behavior excited Xe
atoms density in the 1s5 metastable states by laser absorption
spectroscopy in accordance with various barrier ribs. The maximum
density of excited Xe atoms in the 1s5 in discharge cell with stripe typeand closed type barrier rib have been measured to be 1.28 x 1013 cm-3
and 1.45 x 1013 cm-3, respectively. Through this experiment, we could
understand influence of barrier rib in micro discharge cell.

111

Thursday
PDPp1 - 18

December 7
Time Dependence of VUV Emission Characteristics
of PDP Cells
N. L. Yoo, J. H. Kim, P. Y. Oh, M. W. Moon, K. B. Song,H. J. Lee, S. H. Jeong, C. G. Son, Y. G. Han, S. B. Lee,S. J. Jung, E. Y. Park, Y. J. Hong, B. H. Hong, G. S. Cho,
H. S. Uhm*, E. H. Choi
Kwangwoon Univ., Korea*Ajou Univ., Korea

We have observed the time variation of vacuum ultraviolet(VUV) lights
for 147 nm from the resonant atoms and 173 nm from the excitedmolecular dimers versus the filling gas pressures 200, 300, 400 and
500 Torr for the several xenon mole fractions in the binary gas mixtureof Ne-Xe. From the time variation, the decay time of 147 nm and 173
nm emission is obtained.
PDPp1 - 19L

Priming Effect of Exoelectrons during 10 Hours in
PDPs
T. Sakashita, T. Shiga, S. Mikoshiba
Univ. of Electro-Commun., JapanA phenomenon of an exoelectron emission is attracting attention
because its priming effect on discharges plays an important role indriving of PDP-TVs. In order to detect an extremely weak priming effectof the exoelectrons, a measurement method has been developed withwhich an exoelectron emission can be detected even at 10 hours after
the excitation of the exoelectron emitter. The phosphor prolongs thepersistence of the priming effect. The persistence is reduced withhigher Xe partical pressure, but the emission intensity does not dependon the Xe pressure.
14:00 - 17:00

Ohmi 5-7

Poster PDPp2: PDP(2)PDPp2 - 1

Measurement of Sputtering Yield of RF-Plasma
Treated MgO Films
W. H. Jeong, K. W. Jeong, Y. C. Lim, H. J. Oh,
C. W. Park*, E. H. Choi, Y. H. Seo, Y. K. Kim, S. O. Kang
Kwangwoon Univ., Korea*Korea Polytech. Univ., Korea

We have measured sputtering yield of radio frequency(RF) Ar-plasma
treated and O2-plasma treated MgO protective layer for ACPDP(plasma display panel) using a Focused Ion Beam System(FIB). A
10 kV acceleration voltage has been applied. The sputtering yields ofthe untreated, the Ar-plasma treated and O2-plasma treated samples
have been 0.32 atoms/ion, 0.21 atoms/ion and 0.20 atoms/ion,
respectively. The influence of the plasma treatment on MgO thin film
has been characterized by XPS analysis.

112

Thursday

December 7

PDPp2 - 2

Degradation Characteristics of MgO Protective Layer
in AC PDP
J. H. Kim, H. J. Lee, C. G. Son, Y. G. Han, S. H. Jeong,
N. L. Yoo, S. B. Lee, S. J. Jung, E. Y. Park, Y. J. Hong,
M. W. Moon, P. Y. Oh, K. B. Song, B. H. Hong, G. S. Cho,E. H. Choi
Kwangwoon Univ., Korea

One of important issues in recent AC-PDP technology is image sticking.
In this research, we have investigated the correlation with image
sticking and discharge-degraded MgO protective layer in AC-PDP. MgOprotective layer is exposed during the discharge in PDP cell. And during
the discharge MgO protective layer is bombarded and changed incharacteristics. We have measured Paschen curves, firing voltage(Vfmin), sustain voltage (Vsmax) and memory coefficient, brightness,secondary electron emission coefficient γ, crystal orientation,
component of phosphor for the discharge-degraded MgO protective
layer, and Surface of MgO layer using Scanning Electron Microscopy(SEM).
PDPp2 - 3

Characteristics of MgO Thick Film Protective Layer
M.-S. Ko, D.-H. Kang*, J.-S. Choi*, Y.-S. Kim
Hongik Univ., Korea*SAMSUNG SDI, Korea

MgO electron emission layer of AC-PDP was formed in a form of thickfilm using nano-sized MgO powders. Effects of chemical purities of suchnano-sized MgO powders on glow discharge voltage, and luminanceefficiency were investigated. The results indicated that impurities in the
powders determine defect energy levels in band gap of MgO and thateventually affect the discharge voltage and luminance efficiency of ACPDP, demonstrating a possibility of dramatic improvements inperformance of AC-PDP.
PDPp2 - 4

Wall Charge and Wall Voltage Characteristics of MgOLayer after O2 Plasma Treatment
C. G. Son, S, J,. Jung, J. H. Kim, E. Y. Park, Y. G. Han,
S. H. Jeong, N. L. Yoo, S. B. Lee, Y. J. Hong,
M. W. Moon, P. Y. Oh, W. B. Park*, B. H. Hong,E. H. Choi
Kwangwoon Univ., Korea*LG Elect., Korea

We investigated electro-optical characteristics of MgO protective layer
after radio frequency (RF) O2 plasma treatment. In recent study, O2
plasma treatment MgO layer have better characteristics, such as
secondary electron emission coefficient (γ), efficiency, and degradation
characteristic. The wall charge and wall voltage characteristics havebeen studied for the O2 plasma treated and as-deposited MgO layer.
For optimization of driving technology, we measured the wall charge
and the wall voltage by using the charge-voltage (Q-V) method.

113

Thursday
PDPp2 - 5

December 7
Characteristics of MgO Protective Layer Depositedby O+ IBAD Method in AC PDP
S. J. Kwon, Z. H. Li, Y. J. Kim, K. H. Kim
Kyungwon Univ., Korea

We deposited the MgO films using O+ IBAD method and found that theassisting oxygen ion beam energy plays a significant role in the
structural and the discharging characteristics for MgO. The lowest firing
inception voltage, the highest brightness and the highest luminous
efficiency were obtained when oxygen ion beam energy was 300eV.
Crystallization and surface quality of MgO were also measured by XRD
and AFM.
PDPp2 - 6

Secondary Electron Emission, Brightness andLuminous Efficiency Characteristics of MgO/Al/MgO
Protective Layer
S. J. Jung, H. J. Lee, C. G. Son, Y. J. Hong, J. H. Kim,
E. Y. Park, Y. G. Han, S. H. Jeong, S. B. Lee, N. L. Yoo,
K. B. Song, M. W. Moon, P. Y. Oh, B. H. Hong, E. H. Choi
Kwangwoon Univ., Korea

MgO protective layer have many characteristics and the secondary
electron emission coefficient is the most important one. So we havedesigned various samples (MgO/Al/MgO) which have different gamma
value(secondary electron coefficient). In order to increase thesecondary electron emission coefficient, we have investigated the MgO/
Al/MgO layer according to the various thickness of Al layer. We havemeasured the secondary electron emission coefficient, brightness, andwork function for them. We have been known for the thickness of 50 Å
and 80 Å in Al layer the secondary electron emission coefficient are
higher than for a reference MgO layer without Al. As the result, the firing
voltage is lower. Although very thin Al layer does not disturb thebrightness, the brightness is not good as the Al layer increases.
PDPp2 - 7

Electron Emission Effect of 12CaO・7Al2O3
Electride on Glow Discharge of PDP
M. Y. Lee, Y. S. Kim
Hongik Univ., Korea

A possibility of using 12CaO・7Al2O3 electride as electron emission
layer of PDP discharge cells was explored. The synthesized compound
was converted to electride via reduction method and its electron
emission behavior during the glow discharge was measured. The
results indicated that the electride is effective in reducing firing voltage
of discharge gases of high Xe content. Its thermal stability, however,
was not adequate for an actual application of the material. A possibilityof enhanced thermal stability of the electride was demonstrated byalloying the compound with Mg.

114

Thursday
PDPp2 - 8

December 7
Study on Properties of Si Doped MgO Layer in
SMPDP
Q. Li, Z. Fan, Y. Tang, X. Zhang, L. Yang, Y. Jiang,
Q. Lin*, Q. Zhang, B. Wang
Southeast Univ., China*Nanjing Huaxian High Tech., China

The Si-doped MgO layer has been introduced into SMPDP. XRD results
showed that (111) peak intensity enhances with increasing the O2. The
fluorescence spectrum analysis has detected two peaks, which arenear 360nm and 630nm respectively. The result shows that oxygen andmagnesium vacancies are formed on the Si-doped MgO layer. After
studying the influence on firing voltage and delay time, we can conclude
that Si-doped MgO deposited under suitable condition can improve Vf
and delay time in SMPDP.
PDPp2 - 9

Measurement of Work Function of MgO, MgAl2O4/
MgO, and MgAl2O4 Protective Layers in AC PDPs
K.-W. Jung, H. J. Lee, W. H. Jeong, S. J. Jeong,
H. J. Oh, C. W. Park*, Y. H. Seo, S. O. Kang, E. H. Choi
Kwangwoon Univ., Korea*Korea Polytech. Univ., Korea

The MgAl2O4/MgO protective layer has been found to have lower work
function values of 4.25 eV than those for MgO protective layers whose
are of 4.54 eV, and MgAl2O4 layer the highest work function values of
4.7 eV. It is also found that MgAl2O4/MgO and MgO protective lavers
have been found to have the similar secondary electron emission
coefficient (γ) to each other from 0.05 up to 0.08 for Ne+ ion energies
ranged from 80 eV to 200 eV.
PDPp2 - 10

A New DIDE Cell Structure for High Luminous
Efficacy and Low Voltage Driving of PDP
H. Y. Jung, T. J. Kim, J. K. Lim, K. W. Whang
Seoul Nat. Univ., Korea

A new DIDE structure was suggested to realize a high luminous efficacy
with low driving voltage. Additional works for optimization of DIDE
structure brought more improved voltage and efficacy characteristics.
The intrinsic long gap effect and low driving voltage due to the auxiliaryelectrodes made it possible to achieve a very high luminous efficacy of
7.9 lm/W at the sustain voltage of 230V.

115

Thursday

December 7

PDPp2 - 11

Ultra Bright Plasma Synthetic Scene Generator with
1000 levels of Gray and 1000 Hz Frame Rate
C. A. Wedding, E. F. Peters, J. W. Guy, T. J. Pavliscak,O. M. Strbik III, J. C. Rutherford, D. K. Wedding,
V. W. Kurtz, D. K. Wedding*
Imaging Syss. Tech., USA*Univ. of Toledo, USA

Imaging Systems Technology (IST), is developing Plasma-sphere
synthetic scene generators with 1,000 levels of gray and a 1,000 Hz
frame rate and a brightness between 5,000cd/m2 and 15,000cd/m2.
This is accomplished with a novel high frequency sustain drive. The
enclosed pixel structure of the Plasma-sphere makes a highfrequency drive scheme possible while still maintaining good memory
margin. Plasma-sphere is a trademark of IST.
PDPp2 - 12

Influence of Cell Uniformity on Voltage Margins of
SMPDP
Y. M. Tang, L. S. Tong, B. P. Wang
Southeast Univ., China

A novel equivalent circuit model of SMPDP had been developed andcertified, which can describe the working characteristics precisely
because of its well representation ability of the detailed SMPDP cellstructure and the gas-discharge property. Abnormal discharge
phenomenon can be found when the applied voltage beyond its
limitations by checking the wall voltage variation during the addressingor sustain period in circuit behavior simulation. With this method, theinfluence of cell uniformity on the voltage margins of SMPDP is studied.
PDPp2 - 13

UV Curable Barrier Rib Paste for Micro Injection
Molding Process
Y.-S. Kim, T.-G. Koh, Y.-S. Kim
Hongik Univ., Korea

UV curable paste for barrier ribs of plasma display panel was developed
for micro injection molding processing route. The rheologicalparameters that may cause defects during the process were identified,
which viscosity at rest, pseu-doplasticity, and dilatancy. Consideringsuch parameters, UV curable paste was developed and barrier ribs of
PDPs were successfully processed via the process. This work
demonstrated the possibility of build-up route in manufacturing barrier
ribs of PDP.

116

Friday

December 8
Friday, December 8

10:40 - 12:00

Ohmi 8

PDP3: Driving Method
Chair:
Co-Chair:

R. L. Johnson, Information Tech., USA
Y. Murakami, NHK, Japan

PDP3 - 1
10:40

A New Multi-Level Scan Method for Improving
Address Discharge Characteristics in Subsidiary
Subfields
B.-G. Cho, H.-S. Tae
Kyungpook Nat. Univ., Korea

New multi-level scan driving method with different scan low voltages
under the same ramp falling voltage is proposed to improve address
discharge characteristics in subsidiary subfields. When adopting singlelevel scan method with the same scan low voltage, address discharge
time lag in subsidiary subfield is lengthened over 200ns compared withthe first subfield using main ramp reset waveform. By adopting multilevel scan method, address discharge in the second subfield can be
reduced as much as that in the first subfield.
PDP3 - 2
11:00

Modified Reset Waveform to Widen Driving Marginunder Low Address Voltage in AC PDPs
H. D. Park, K.-H. Park, H.-S. Tae, J.-R. Kim*, S.-H. Park*,
M. Hur*, M. Yoo*, K. S. Lee*
Kyungpook Nat. Univ., Korea*
Samsung SDI, Korea

In this paper, a new reset driving waveform is proposed to widen adriving margin under the low address voltage in AC-PDPs. The
proposed reset waveform can alter the wall charge distribution between
the X-Y electrodes by applying the X-ramp bias(∆Vx) prior to an
address-period, thus resulting in lowering the minimum level of the scanpulse(∆Vy) during an address- period without a misfiring discharge in
off-cells. As a result of adopting the proposed reset waveform, theaddress discharge time delay is reduced about by 200 ns at an address
voltage of 35 V and the related dynamic driving margin is observed to
be wide under a low address voltage condition, and its related
phenomenon is examined by the Vt close-curve method.

117

Friday
PDP3 - 3
11:20

December 8
Efficacy Improvement of Positive Column PDPs by
an Introduction of Field Perturbation
T. Sato, N. Kobayashi, T. Shiga, S. Mikoshiba, H. Asai*,
N. Kikuchi*
Univ. of Electro-Commun., Japan*
Noritake, Japan

Luminous efficacy of the positive column discharge PDPs has been
improved by introducing “delayed data pulses” which are applied to thedata electrodes after the sustain discharges are self-terminated. The
wall charges on the data electrodes perturb the electric field distribution
in the discharge space, slowing the build-up of the sustain discharge,
limiting the peak discharge current, lowering the electron temperature,
and also diffusing the sustain discharge path. The efficacy andluminance are improved by 35% and 38%, respectively.
PDP3 - 4
11:40

Effect of Full-White Aging on Boundary Image
Sticking in AC PDP
C.-S. Park, H.-S. Tae, Y.-K. Kwon*, J. M. Jeoung*,
S. B. Seo*
Kyungpook Nat. Univ., Korea*Samsung SDI, Korea

When displaying the square-type image with peak luminance for a longtime in 42-in. PDP-TV, the permanent image sticking and boundary
image sticking appeared. This image sticking phenomenon is deeply
related to the Mg species sputtered from the MgO surface of thedischarge cell due to the iterant strong sustain discharge. In particular,
the boundary image sticking is due to the re-deposition of the Mg
species on both the MgO and phosphor layers in the non-discharge
region adjacent to the discharge region. To reduce the boundary image
sticking, the effects of full-white aging discharge on the boundary image
sticking were observed. The full-white aging experiment showed that
the MgO morphology in the boundary region was changed due to the
100 hours full-white aging discharge, which was almost similar to that in
the non-discharge region. Furthermore, the changes in the discharge
and luminance characteristics in the boundary image sticking region
were observed after the 100 hours full-white aging discharge. As aresult, it is observed that the full-white aging discharge can contribute to
reducing the boundary image sticking considerably.
----- Lunch -----

118

Friday

December 8

14:00 - 15:20

Ohmi 8

PDP4: Fabrication
Chair:
Co-Chair:
PDP4 - 1:
14:00

K. W. Whang, Seoul Nat. Univ., Korea
R. Murai, Matsushita Elec. Ind., Japan
Invited Replication Process for High Resolution
Barrier Ribs
H. Kikuchi, A. Yoda, J. C. Cha, P. S. McGuire*
Sumitomo 3M, Japan*
3M, USA

3M has developed a Precision Replication Process for the production of
PDP Barrier Ribs and other display devices. This additive, andintrinsically simple process, is fast, clean and capable of producing very
high resolution, aperture ratio and fine cell structures. The 3M systemutilizes: a flexible sheet mold, a light curable paste and a lamination
molding process to produce a glass microstructure in registration with
PDP panel electrodes. This process offers PDP manufacturer’s design
flexibility, productivity and reduced manufacturing costs.
PDP4 - 2
14:20

Study of an Unsymmetrical Shadow Mask PDP
Z. W. Fan*’**, X. Zhang*’**, L. L. Yang*’**, Y. Y. Jiang*,
Q. Li*’**, Y. Tu*, B. P. Wang*’**, Q. Y. Lin***Southeast Univ., China**Nanjing Huaxian High Tech., China

One kind of Shadow Mask PDP(SMPDP) with unsymmetrical structure
discharge cell is discussed in this article. It consists of a front plate, arear plate, and a conductive shadow mask sandwiched between thefront plate and rear plate. Each cell on the shadow mask has an
unsymmetrical structure. A 4-inch size unsymmetrical SMPDP was
fabricated and analyzed. Compared with the present symmetrical
SMPDP, the unsymmetrical SMPDP has higher brightness andluminous efficacy.
PDP4 - 3
14:40

Withdrawn

119

Friday
PDP4 - 4
15:00

December 8
Plasma Characteristics of Line-Shaped Plasma for
PDP Manufacturing
G. Shanmugavelayutham*’**, T. Fukasawa*’**,
H. Kajiyama*, T. Shinoda**
Univ. of Tokyo, Japan**ADTEC Plasma Tech., Japan

High density microwave plasmas based on electrodeless discharge
have been studied and developed for large area plasma processing in
manufacturing industries, such as large area PDP and LCD. The
present paper describes the development of novel line-shaped plasma
under Long Wavelength Evanescent Microwave (LWEM) and its
characteristics. Uniform plasma density is observed employing a twin
power supply system. The line-shaped plasma has uniformity of about 7% for 40 cm length at 4 Torr He plasma with total input power of 1.4 kW
in the twin power mode and the same is 7.6%, 3.6% at pressure of
20mTorr Ar plasma. We developed a system for processing of 10×10mm2 PDP samples.
----- Break -----

15:40 - 17:00

Ohmi 8

PDP5: PDP TV
Chair:
Co-Chair:
PDP5 - 1:
15:40

L. F. Weber, Consultant, USA
T. Shinoda, Fujitsu Labs., Japan
Invited Image Quality Evaluation and Analysis of LCD
and PDPK. Hirai, T. Nakaguchi, N. Tsumura, Y. Miyake
Chiba Univ., Japan

In this paper, an image quality of movies displayed on the LCD and the
PDP is compared and analyzed on the basis of subjective and objective
evaluation experiments. Nineteen kinds of movies with different
dynamic range, contrast, colorfulness and motion blur are evaluated byobservers. Physical values such as luminance and chromaticity of eachmovie and MPRT displayed on the displays were also measured andanalyzed. Moreover the relationship between observer rating values
and those obtained physical values was discussed.

120

Friday
PDP5 - 2
16:00

December 8High Luminous Efficiency and Low Black LuminanceAC PDP with Address Space Separation Cell
Structure
H. Ajiki, Y. Negoro, S. Kitazawa, K. Mogi, Y. Shiozaki,
K. Yahagi, E. Otani, H. Taniguchi, S. Iwaoka,
N. Saegusa, K. Amemiya
Pioneer, Japan

The issue of high luminous efficient PDPs with high Xe content gas arehigh driving voltage, and high black luminance caused by the increased
luminance of reset and address discharges. Address Space Separation
cell structure, where each cell is divided to a display sub-cell and acontrol sub-cell, is examined. 50-inch diagonal test panel shows
following performance: luminous efficacy; 2.8 lm/W, peak luminance;
1200cd/m2, black luminance; 0.04 cd/m2, and dark-room contrast ratio;
30,000:1.
PDP5 - 3
16:20

42-in. Wide XGA Shadow Mask PDP without ITO
X. Zhang*’**, Y. Tu*, Q. Li*’**, Y. Tang*’**, Z. Fan*’**,
Z. Wu*’**, Y. Zheng*’**, L. Yang*’**, Q. Lin**, B. Wang*’***Southeast Univ., China**Hua Xian High Tech., China

A 42-inch wide XGA Shadow Mask PDP is introduced in this paper. A
diamond shape discharge cell on the shadow mask is designed withdelta type RGB arrangement. The panel structure is optimized toreduce the capacitance and increase the discharge efficiency. A twisted
opposite discharge process is captured by ICCD camera. The
discharge current shows equivalence for the negative and positive
sustain pulse which increase the efficacy effectively.
PDP5 - 4L: Invited World Largest 103-in. 1080p PDP
16:40
R. Murai, K. Ueda, S. Masuda, K. Ogawa, H. Yasui,
S. Ikeda
Matushita Elec. Ind., JapanThe 103-in. 1080p(full HD PDP,1920x1080 pro-gressive) has beendeveloped and introduced into the market as the world largest productsince last September. In this report, we describe the concept of the 103in. 1080p(full HD PDP) and the panel structure. We also discuss thebest viewing angle for picture quality in a living room.

Author Interviews
17:00 – 18:00
Sponsor:Plasma Display Technical Meeting121

Wednesday

December 6

Workshop on
EL Displays, LEDs and Phosphors
Wednesday, December 6
13:20 - 16:20

Ohmi 5-7

Poster PHp: Phosphors
PHp - 1XANES Study of Eu Centers in CaAl2O4:Eu Phosphor
Thin-Films Prepared by Pulsed Laser Deposition
T. Kunimoto, T. Honma*, A. Yamane**, Y. Shao**,
K. Ohmi**, H. Kobayashi
Tokushima Bunri Univ., Japan*JASRI/SPring-8, Japan**
Tottori Univ., JapanXAFS studies of CaAl2O4:Eu phosphor thin films prepared by PLD werecarried out. The ratio of Eu2+/Eu3+ is estimated by Eu-LIII edge XANES
spectra. It has been found that the Eu2+ has a majority for the asdeposited film. The ratio of Eu2+ is further increased to 95% byannealing only for the films deposited under almost stoichiometriccondition in the laser-induced plasma. For the film deposited under nonstoichiometric condition, Eu3+ is rather increased by annealing even in a
reducing atmosphere.
PHp - 2Temperature Dependence of the Exciton Emission
from BaMgAl10O17
H. Kajiyama*, H. Tanno*’**, S. Zhang*’**, G. Uchida*,
T. Kono**, T. Yasaka**, T. Shinoda**
Univ. of Tokyo, Japan**
Daiden, Japan

Temperature dependence of photoluminescence and thermoluminescence are measured on BaMgAl10O17 (BAM) between 50 and 500 K.
The emission peak shifts from 270 to 242 nm and its intensity increases
significantly, as the sample temperature decreases. The
thermoluminescence measurement supports the idea that oxygen
vacancies in BAM affect the exciton emission. Based on the results, theelectron transport mechanism before exciton formation is proposed, inwhich electrons have undergone a non-radiative transition and thisfrequent is depending on the temperature.

122

Wednesday
PHp - 3

December 6
Large-Scale Electronic Structure Calculation of EuDoped BaMgAl10O17 - Effects of Defects on Its
Luminescence PropertiesH. Onuma*, H. Tanno**, H. Tsuboi*, M. Koyama*,
A. Endou*, H. Takaba*, M. Kubo*’***, C. A. Del Carpio*,
H. Kajiyama**, T. Shinoda**, A. Miyamoto**Tohoku Univ., Japan**Univ. of Tokyo, Japan***JST-PRESTO, Japan

We have employed tight-binding quantum chemistry method involving a
new calculation method for rare earth elements to calculate theelectronic structure of BaMgAl10O17:Eu2+ (BAM). The new method
considers the particular nature of the 4f orbitals which is specified bytheir location respect the nuclei and their degeneration properties. Our
calculation results indicate that the oxygen vacancy in BAM cause thered-shift of luminescence color and the degradation of brightness.
PHp - 4

Phosphors with High Chromatic Purity for Cold
Cathode Fluorescent Lamps Utilized for Wide-ColorGamut LCDs
R. Ohtsuka
Kasei Optonix, JapanTo enhance the chromatic purity of pixels and expand the color gamut of
LCDs, the spectral distribution of a CCFL was investigated together withthe spectral transmittances of related color filters. As new green and red
phosphors with high chromatic purity, BaMgAl10O17:Eu2+,Mn2+ andYVO4:Eu3+ were developed and improved and applied to the CCFL.
The CCFL with these new phosphors used as an LCD backlight had an
expanded LCD color gamut without any sacrifice in image brightness.
PHp - 5Oxide Coating on Sulfide Phosphors for Improved
Luminescent Properties
E. J. Kim, S. H. Hong
Seoul Nat. Univ., Korea

Sulfide phosphors have become useful for blue LED phosphors. The
prevention of the degradation of sulfide phosphors from light source isimportant for white LED technology. In this study, the red emitting
SrS:Eu phosphor was coated with a uniform SiO2 layer to enhanceluminescent properties. The surface morphologies of coated anduncoated phosphors were characterized using FE-SEM, analyzed thecoating image by TEM, and measured relative intensity under PL
excitation.

123

Wednesday
PHp - 6

December 6
Luminescent Properties of Co-Doped ZnAl2O4:Mn,Gd
Phosphors
Y. Kato, H. Kominami, K. Hara, Y. Nakanishi,
Y. Hatanaka*
Shizuoka Univ., Japan*Aichi Univ. of Tech., Japan

ZnAl2O4:Mn green emitting phosphor synthesized by citric acid gel
method was studied for wider gamut displays. ZnAl2O4:Mn shows green
emission peaked at 512 nm with FWHM of 24.3 nm, and high-chromathan the ZnS:Cu,Al and SrGa2S4:Eu under excitation with electron
beam. However, the luminance should be improved forcommercialization. It was expected that improvement of luminescent
properties of the several ions co-doping with ZnAl2O4:Mn, however,from the results, Mn emission was quenched by co-doping.
PHp - 7

Synthesis and Size Control of Monodisperse
Spherical Y2O3:Eu3+ Phosphor and Its
Photoluminescence Properties
H. S. Yoo, H. S. Jang, W. B. Im, J. H. Kang, D. Y. Jeon
KAIST, Korea

A monodisperse spherical Y2O3:Eu3+ phosphor was prepared by ahomogeneous precipitation method. Mean size of the phosphor
particles was successfully controlled from 276 nm to 103 nm withmaintaining a high yield more than 95 %. Crystallinity and PL intensityof the phosphor increased with decrease of particle size. Because thenumbers of Eu3+ ions at no-inversion symmetry sites increased withdecrease of particle size, PL intensity ratio between two types oftransition (I5D0-7F2/I5D0-7F1) increased from 10.8 to 12.7.
PHp - 8

Cathodoluminescent and Structural Properties of
Y2O3:Eu Thin-Film Phosphors Deposited by a RFMagnetron Sputtering Process
K. Y. Ko, K.-N. Lee, S.-U. Kim, Y. R. Do, Y.-D. Huh*
Kookmin Univ., Korea*Dankook Univ., Korea

Y2O3:Eu3+ thin-film phosphors have been deposited on quartz
substrates using a simple RF-magnetron sputtering process. The
crystal structure of the Y2O3:Eu3+ target was crystalline with a cubic
phase. The films were deposited at 200 °C in Ar plasma. The asdeposited Y2O3:Eu3+ thin-film phosphors on quartz substrates were
crystalline with mixed Y2O3 cubic and monoclinic phases. Y2O3:Eu3+
films annealed at temperature above 900 °C were cubic structures. The
cathodoluminescent properties, morphologies and crystallographic
structures of the as-sputtered and annealed Y2O3:Eu3+ thin-films arecharacterized and discussed.

124

Wednesday
PHp - 9December 6
Cathodoluminescence Properties of Sol-Gel Derived
Y2O3:Re (Re=Eu, Tb and Tm) Thick-Film Phosphorsfor Display Applications
J. Y. Cho, J. R. Oh, C. R. Park, Y. R. Do
Kookmin Univ., Korea

Rare earth doped yttrium oxide thick film phosphors (Y2O3:Re,
Re=Eu3+, Tb3+, and Tm3+) were grown on sapphire substrates
employing a simple sol-gel technique. Structural and optical properties
were investigated by using XRD, AFM, SEM, and CL. The film annealed
at elevated temperature shows an increase in crystallinity of Y2O3 andcathodoluminescence brightness of Y2O3:Re thin-films. Films
containing Eu3+, Tb3+, and Tm3+ emitted red, green, and blue colors,
respectively.
PHp - 10

Excitation Mechanism of Luminescence Centers in
Nanostructured ZnS:Tb Thin-Film
Electroluminescent Devices
D. Adachi, K. Takei, T. Toyama, H. Okamoto
Osaka Univ., Japan

Excitation mechanism of luminescence centers in low-operation-voltage
nanostructured thin-film electroluminescent (NS-TFEL) device, of whichemission layer is a multilayer composed with 4-nm-thick activator-iondoped ZnS nanocrystal (NC) layers and 0.7-nm-thick insulatinginterlayers, has been studied. The voltage-dependence of EL intensity
ratio originated from the 5D3 and 5D4 level of Tb3+ has revealed that thedominant mechanism is attributed to the direct-impact excitation by hotelectrons.
PHp - 11

Elecroluminescent and Aging Characteristics ofTFEL Devices Employing Spin-Coated (Ba,Sr)TiO3
Insulating Layers
M. Yamasaki, Y. Ouchi, K. Tsuji, K. Ohmi, M. Niboshi**,
H. Kobayashi*
Tottori Univ., Japan*Tokushima Bunri Univ., Japan**
Sharp, Japan

Spin-coated (Ba,Sr)TiO3 (BST) thin films have been firstly employed asboth first and second insulating layers in thin film electroluminescent(TFEL) devices. A luminance is improved by replacing the EBevaporated Y2O3 film by the BST film. For the devices having the 2nd
BST insulating layer, no luminance degradation is found after
accelerated aging at 1 kHz for 256 h.

125

Wednesday
PHp - 12

December 6
Electroluminescence from Zn2(Si1-xGex)O4 Phosphor
Thin-Films
H. Fukada, S. Matsui, T. Miyata, T. Minami
Kanazawa Inst. of Tech., Japan

Two types of thin-film electroluminescent (TFEL) devices, one driven
under ac voltage and the other under dc voltage, have been fabricatedusing Zn2(Si1-XGeX)O4 phosphors as the emitting layer. A highluminance for green emission was obtained in the dc-type TFEL devices
with a Zn2Si0.6Ge0.4O4:Mn thin-film layer. Blue emission was obtainedin ac-type TFEL devices fabricated by combining a Zn2Si0.6Ge0.4O4
phosphor thin-film emitting layer with a thick BaTiO3 ceramic sheet as
the insulating layer.
PHp - 13Thin-Film EL Devices Using Eu-Activated SnO2Based Multicomponent Oxide Phosphors
H. Fukada, T. Miyata, T. Minami
Kanazawa Inst. of Tech., Japan

Red-emitting thin-film electroluminescent (TFEL) devices have beendeveloped using various Eu-activated SnO2-based multi-component
oxide-phosphor thin films deposited on thick BaTiO3 ceramic sheets.
The phosphor thin films were prepared by conventional andcombinatorial r.f. magnetron sputtering deposition and pulsed laser
deposition methods and then post-annealed in air. A high luminance
was obtained in TFEL devices with a post-annealed (Y2O3)0.33(SnO2)0.67:Eu or (GeO2)0.2-(SnO2)0.8:Eu thin-film emitting layer.
PHp - 14

Schottky Barrier Measurements on Oxidized Au/Ni/pGaN by Photoelectron Spectroscopy
T.-C. Tien, W.-H. Kuo, L.-S. Fang, C.-S. Huang,
M. Siddheswar, B.-J. Hsu, L.-J. Lin
ITRI, Taiwan

In this study, we report the relation between Shottky Barrier Height(SBH) and compositional ratio on oxidized Au/Ni/p-GaN by
photoelectron spectroscopy. After annealing, the nickel oxide formed at
top side of gold layer due to diffusion effect. In the top NiO layer, wefound that higher N/Ga and lower O/Ni atomic ratio will reduce ValenceBand Maximum (VBM) and SBH. Beside, the contact resistances ofoxidized Au/Ni/p-GaN are also proportional to SBH.

126

Wednesday
PHp - 15L

December 6
Correlating the ACEL Performance of Phosphor
Powders ZnS:Cu,X (X = Cl, Br) with their Charge Trap
Characteristics
J. Silver, R. Withnall, G. R. Fern, P. J. Marsh,
T. G. Ireland, A. Salimian
Brunel Univ., UK

In this work we describe how the thermal annealing history of ACEL
phosphor powders ZnS:Cu,X (X = Cl, Br) critically affects theirelectroluminescence performance. This is shown to be due to thedependence of the characteristics of the electron traps on the firingconditions, as is made evident from their thermally stimulated
luminescence curves.
PHp - 16L

Optical Properties of the (Y,Gd)BO3:Eu3+Phosphor
Coated with SiO2 Nano Particles via a Sol-Gel
ProcessJ. H. Lee, S. M. Lee, S. H. Sohn
Kyungpook Nat. Univ., Korea

In order to improve the luminance of red emission of the PDP europiumdoped (Y,Gd)BO3 phosphors were coated on the surface with SiO2 via
sol-gel process. It was revealed that the surface coating of phosphorswith SiO2 leads to an increase in luminance intensity. This seems to be
due to the increase of the excitation light which is transmitted into thephosphor, i.e., an effective vacuum ultraviolet absorption of thephosphor via SiO2. The experimental results suggest that the surface
coating of the phosphor with SiO2 is a way to improve the luminance of
the PDP.
PHp - 17L

Luminescence Characteristics of ZnGa2O4: Mn+2,
Cr+3 Phosphor Thick Film Deposited by ScreenPrinting Method
H, W. Choi, Y. S. Park, S. K. Lee, J. H. Cha
Kyungwon Univ., Korea

The Mn2+, Cr3+ doped ZnGa2O4 phosphor powder was synthesized bysolid-state reaction and thick films were made by screen-printing
method. The XRD patterns of ZnGa2O4 phosphor thick films show a(311) main peak and a spinel phase. The CL spectrum of Mn2+ doped
ZnGa2O4 show the main peak of 512nm green emission, and the CL
spectrum of Cr3+ doped ZnGa2O4 is the main peak of 716nm red
emission.

127

Wednesday
PHp - 18L

December 6
Effect on the Characterization of SrGa2S4:Eu Green
Emitting Thin Film Phosphor of KrF Laser Annealing
T. Harakawa, T. Seino*, K. Kominami, K. Hara,
Y. Nakanishi, Y. Hatanaka**
Shizuoka Univ., Japan*
Japan Steel Works, Japan**Aichi Univ. of Tech., Japan

SrGa2S4:Eu green emitting thin films prepared by lower temperatureprocess blow 600 °C were investigated. It was obtained that the films
were crystallized by thermal annealing above 550 °C, and showedgreen emission of SrGa2S4:Eu. Besides, the films annealed below 500°C showed poor emittion. On the other hand, the films annealed 500 °C
showed the highest luminance after laser annealing than that of 550 °C.
It indicates that the process of laser annealing was assisted not only the
crystallization of SrGa2S4 phase at lower temperature but also
improvement of luminescent properties.
PHp - 19L

Ceramic-Sheet Phosphor for Phosphor-on-Top
Package of White LED
J. S. K. Park, K. W. Park, S. M. Son, J. S. Kim,
G. C. Kim*, H. L. Park**
Pukyong Nat. Univ., Korea*
Korea Univ. of Tech. & Education, Korea**Yonsei Univ., Korea

Yellow ceramic-sheet phosphor for phosphor-on-top package of whitelight-emitting diode (WLED) is presented. It is made of green-to-yellow
emissive (Ba,Sr)2SiO4:Eu2+ phosphor, and wide-band gap metal oxide
to control the transmittance of blue light of InGaN LED. As an increaseof the metal oxide ratio to the phosphor in the ceramic-sheet phosphors,
WLEDs show more blue-dominant white lights.
PHp - 20L

Measurements of Luminous Efficiencies ofConversion Phosphors for Blue Emitting LEDs
R. Withnall, J. Silver, A. L. Lipman
Brunel Univ., UK

In this work we describe luminous efficiency measurements carried out
on both in-house and commercial samples of YAG:Ce (P46). We show
herein that the luminous efficiency of the phosphor depends on anumber of variables; these include the Ce activator concentration, thefiring temperature, the exciting wavelength and the operating
temperature of the phosphor.

128

Wed./Thu.
PHp - 21L

December 6/7
White Two-Phosphor Blend of CaMgSi2O6: Eu2+,
Mn2+ and (Ba, Sr)2SiO4: Eu2+ for UV-Based White
LED
J. S. Kim
Pukyong Nat. Univ., Korea

Diopside CaMgSi2O6: Eu2+, Mn2+ phosphor shows yellow-poor threeemission bands. Two-phosphor blends of CaMgSi2O6: Eu2+, Mn2+ andgreen-to-yellow emissive (Ba, Sr)2SiO4: Eu2+ phosphors excited by thenear-ultraviolet show the correlated color temperatures from 4845 K to9180 K, and the color rendering indexes from 71 % to 88 %.

Thursday, December 7
9:00 - 10:15

Ohmi 9

PH1: ELDs
Chair:
Co-Chair:P. H. Holloway, Univ. of Florida, USA
K. Ohmi, Tottori Univ., Japan

PH1 - 1
9:00

High Luminance Powder-Type Inorganic
Electroluminescent Devices
S. Yamashita, T. Satou, M. Shirata, T. Noguchi,
K. Kawato, K. Ogawa
Fuji Film, JapanThe Dispersion-type electroluminescence (EL) device was studied toachieve higher brightness, longer lifetime, and higher color rendering
property in order to obtain ideal flexible film light source for transparent
materials. In the conventional powder type inorganic EL film, the highbrightness over 300 cd/m2 was not obtained with long life and high color
rendering property (red illuminant). Phosphor particles, optical andelectrical design of layer structures, color-changing materials werestudied and reported in this paper.
PH1 - 2
9:20

Zinc Gallate Based Multicomponent Oxide Thin-Film
EL Phosphors Developed with Combinatorial
Sputtering Deposition
T. Miyata, H. Fukada, T. Minami
Kanazawa Inst. of Tech., Japan

Zinc gallate based multicomponent oxide phosphor thin films have beendeveloped for applications as the emitting ayer of thin-film
electroluminescent (TFEL) devices using a combinatorial r.f. magnetron
sputtering deposition method. Al content (X) as well as the Mn content
of Zn(Ga1-XAlX)2O4:Mn thin films were optimized; consequently, a highluminance of 2200 cd/m2 for green emission was obtained in 1 kHzdriven TFEL devices using Zn(Ga0.7Al0.3)2O4:Mn thin films with an Mncontent of 2.2 at.%.

129

Thursday
PH1 - 3
9:40

December 7
Hot Carrier Behavior and Excitation Process in BlueElectroluminescent BaAl2S4:Eu Thin-Films
K. Tanaka, S. Okamoto
NHK, Japan

We have investigated hot carrier behavior and electroluminescent (EL)excitation process in oxygen-free BaAl2S4:Eu thin-film having highcrystallinity. EL waveform clarifies firstly that blue EL in BaAl2S4:Eu thinfilm is caused by hot hole excitation. X-ray photoelectron spectroscopy
spectra and first principles calculation revealed the unique excitation
process in which hot holes excite the Eu2+ centers effectively in
BaAl2S4 host.
PH1 - 4L
10:00

Oxygen Effect on Microstructure and Stability of
BaAl2S4:Eu Phosphor in TDEL Display Devices
S. Yu, J. Acchione
iFire Tech., Canada

The oxygen effect on BaAl2S4:Eu phosphor microstructure has been
revealed by Transmission Electron Microscopy (TEM) analyses.
Oxidation driven aluminum segregation caused the inhomogeneous
phosphor film microstructure and stacking faults in the phosphor. Stable
and high efficient BaAl2S4:Eu phosphor in TDEL deices have beenachieved by optimizing oxidation during phosphor process which
reduces the defects level and eliminate the segregation of aluminum atthe lower interface between phosphor and lower dielectric.
----- Break -----

10:40 - 12:55

Ohmi 9PH2: LEDs
Chair:
Co-Chair:PH2 - 1:
10:40

M. Shiiki, Hitachi, Japan
Y. Nakanishi, Shizuoka Univ., Japan
Invited Phosphors for Solid-State Lighting
N. Kijima
Mitsubishi Chem. Group S&T Res. Ctr., Japan

High-luminous green phosphors and a red phosphor have been newly
developed for a white light emitting diode using a blue LED as an
excitation source. The developed green phosphors are Ca3(Sc,Mg)2Si3O12:Ce made by replacing with Mg a part of Sc of green
phosphor Ca3Sc2Si3O12:Ce, and a new phosphor CaSc2O4:Ce. The
new red phosphor is (Sr, Ca)AlSiN3:Eu made by replacing a part of Ca
of CaAlSiN3:Eu with Sr.

130

Thursday
PH2 - 2
11:10

December 7
A New Red LED Phosphor, Ba2R3Li3M8O32:Eu (R =Rare Earths, M = Mo and W)
K. Toda, S. Seki, Y. Ito, K. Uematsu, M. Sato
Niigata Univ., Japan

Ba2R3Li3M8O32:Eu3+ (R = Rare earths, M = Mo and W) was preparedby a conventional solid-state reaction. These molybdate and tungstate
phosphors can be efficiently excited by near UV light, yielding an
intense red emission. The emission intensity of the phosphor is about 5
times higher than that of a commercial YAG:Ce3+ phosphor.
PH2 - 3
11:30

Efficiency Investigations of Blue Light Excitation
Type for White LEDs
K. Sakuma, N. Hirosaki*, R.-J. Xie*, N. Kimura,
S. Hirafune
Fujikura, Japan*
NIMS, JapanThe luminous efficiencies and the theoretical limits of the luminous
efficacies of the white LED lamps consisting of a blue LED die andphosphors were investigated by calculations. Various phosphors
including novel nitride and oxynitride phosphors are adopted to beinvestigated.
PH2 - 4L:
11:50

Invited Luminescence of Novel Rare-Earth Doped
Nitride-Based Phosphors for White LEDs
Y. Q. Li*’**, G. De With*, H. T. Hintzen*
Eindhoven Univ. of Tech., The Netherlands**
Nat. Inst. for Materials Sci., Japan*

Novel rare-earth doped green, yellow and red-emitting nitride based
phosphors have been developed for white-LEDs applications. The
luminescence properties of nitride phosphors are described according
to the host lattices from nitride, oxynitride to nitride-carbide. Eu2+, Ce3+
and Tb3+ activated nitride materials show high conversion efficiency inthe blue region with high thermal stability. In this overview presentation,
the focus is on revelation of the relationship between the luminescenceroperties and the crystal structure/composition.
PH2 - 5L:
12:15

Invited A Correlation between Thermal Stability of
PDP Phosphors and Their Crystal Structures
D. Y. Jeon, W. B. Im
KAIST, Korea

To understand the thermal stability of PDP phosphors during the baking
process, we have evaluated the thermal stability of BaAl2Si2O8:Eu2+,(Sr1-x,Bax)3MgSi2O8:Eu2+, LaMgAl11O19:Eu2+ and a few others.
Through this study, it was found that both the openness around Eu2+ ion
and the average inter-atomic distances (dEu-O) between Eu2+ ion andoxygen play a key role of shield for Eu2+ ions against oxidation
atmosphere.

131

Thursday
PH2 - 6L
12:40

December 7
Synthesis of (Ca,Sr)MgSi2O6:Eu Phosphors andTheir Luminescent Characteristics under VUVExcitation
T. Kunimoto, K. Ohmi*, H. Kobayashi, S. Kuze**,
T. Isobe**, S. Miyazaki**
Tokushima Bunri Univ., Japan*Tottori Univ., Japan**
Sumitomo Chem., Japan

CaMgSi2O6:Eu is recently expected to be a promising material for new
blue PDP phosphor because of its longevity for Xe discharge plasma.
To improve the luminescent efficiency and thermal quenching of
CaMgSi2O6:Eu, (Ca,Sr)MgSi2O6:Eu phosphor has been developed. It isfound that the toral stimuli (L/y) of (Ca,Sr)MgSi2O6:Eu is better than thatof BAM under Kr2 excimer excitation and the (Ca,Sr)MgSi2O6:Eu shows
better maintenance ratio of PL intensity at 373K in comparison to
CaMgSi2O6:Eu (75% vs. 50%).
----- Lunch -----

15:40 - 16:40

Ohmi 9PH3: Phosphors for PDPs
Chair:
Co-Chair:

D. Y. Jeon, KAIST, Korea
T. Miyata, Kanazawa Inst. of Tech, Japan

PH3 - 1
15:40

A Molecular Dynamics Study on Eu Doped
BaMgAl10O17 -Influence of Defects, Humidity, andSurface on Geometrical StructureH. Onuma*, H. Tanno**, H. Tsuboi*, M. Koyama*,
A. Endou*, H. Takaba*, M. Kubo*’***, C. A. Del Carpio*,
H. Kajiyama**, T. Shinoda**, A. Miyamoto**Tohoku Univ., Japan**Univ. of Tokyo, Japan***
JST-PRESTO, Japan

We carried out molecular dynamics simulation to study the structuralcharacteristics of BaMgAl10O17:Eu2+ (BAM). Our results suggested that
Beevers-Ross site is the dominant Eu site in the bulk of BAM. We foundstructural disorder in BAM near the surface when the BAM crystal
surface was clean. We employed Monte Carlo methods to investigate
the water sorption on BAM. The water molecules did not intercalate withthe bulk of BAM and were dominantly adsorbed to the Eu atoms on thesurface.

132Thursday
PH3 - 2
16:00

December 7
Baking and Plasma-Irradiating Induced Degradations
in BaMgAl10O17
H. Tanno*’**, S. Zhang*’**, T. Fukasawa*, G. Uchida*,
H. Kajiyama*, T. Kono**, T. Yasaka**, T. Shinoda**
Univ. of Tokyo, Japan**Daiden, JapanThe degradation processes induced by baking and plasma irradiation in
undoped and Eu-doped BAM (BaMgAl10O17) are investigated byphotoluminescence (PL) and thermoluminescence (TL) spectroscopy.
The TL spectra of Eu-doped BAM indicate that the baking process
shakes down the number density of original electron traps, whereas adeep electron trap is newly formed. As for a plasma irradiation, it has
severe effect on the original electron traps in BAM host but only a slighteffect on Eu-doped BAM.
PH3 - 3
16:20

Study of Local Structure of Luminescent Centers in
MeLn4Si3O13:Tb (Me = Ca, Sr, Ln = La, Gd) GreenEmitting VUV Phosphors by XAFS
T. Honma, T. Kunimoto*, A. Yamane**, S. Orita**,
Y. Nakashima**, K. Ohmi**, H. Kobayashi*
JASRI/SPring-8, Japan*Tokushima Bunri Univ., Japan**
Tottori Univ., Japan

Local structure around luminescent centers has been investigated by Xray absorption fine structure (XAFS) measurement for Tb-doped
MeLn4Si3O13 (Me=Ca,Sr, Ln=La,Gd) phosphors. It has been found thatthe local structure around Tb3+ centers is similar for all phosphors,
resulting in the similar spectral shape of photoluminescence excitation
spectra in UV-VUV region except for the excitation band due to intrashell transition of Gd3+.
----- Break -----

133

Thursday

December 7

16:55 - 18:15

Ohmi 9

PH4: Phosphors
Chair:
Co-Chair:PH4 - 1:
16:55

Y. Nakanishi, Shizuoka Univ., Japan
N. Miura, Meiji Univ., Japan
Invited Preparation of Fine Phosphor Particle by
Spray-Based Methods
W. Lenggoro, K. Okuyama
Hiroshima Univ., Japan

Spray method (e.g. spray pyrolysis, spray drying) is a droplet-to-particle
conversion method for aerosol processing. Several synthesis routes
based on spray method (e.g. salt-assisted spray pyrolysis) were
designed to prepare doped-type oxide and sulfide phosphor particles.
The newly developed methods have considerable potential for
preparing a variety of nano- and submicron phosphor particles without
the need for post-treatment processing.
PH4 - 2
17:30

The Use of Polymeric Additives in a LowTemperature Flame Spray Pyrolysis
R. Kubrin, W. Bauhofer, A. Ivankov*
Tech. Univ. Hamburg-Harburg, Germany*
Helling GmbH, Germany

Fine powder of cubic Y2O3:Eu phosphor was synthesized by lowtemperature flame spray pyrolysis in premixed propane/air flames. The
new method of simultaneous synthesis and screening is reported,
where the use of binding agents is entirely avoided. In this method, hotparticles of phosphor settle onto the surface of the substrate fixed
directly above the flame. The article focuses on discussion of theinfluence of polymeric additives (ethylene glycol and citric acid) on
morphology of phosphor particles.
PH4 - 3:
17:50

Invited Nanophosphors – PL, EL, and BiologicalMarkers –P. H. Holloway, H.-S. Yang*, H.-J. Lee, S.-Y. Seo,
S. Santra**, L. Qian, D. Bera
Univ. of Florida, USA*
Hongik Univ., Korea**Univ. of Central Florida, USA

Phosphors whose particle size is about 2 to 3 nm (called Quantum dots
or Qdots) have very unusual properties. Quantum states andconfinement of their excitons may shift their absorption and emission
energies. Such effects are important for tuning their luminescencestimulated by photons (photoluminescence-PL) or electric fields(electroluminescence-EL). CdS:Mn/ZnS Qdots were synthesized using
a microemulsion process. Procedures for functionalizing Qdots andtheir use as markers in biological systems were described.
Author Interviews
18:40 – 19:40
134

Friday

December 8
Friday, December 8

10:30 - 11:40

Ohmi 9FED2/PH5: Phosphors for FED and FEA Backlight Unit
Chair:
Co-Chair:N. Egami, NHK, Japan
T. Hisamune, KASEI OPTONIX, Japan

FED2/PH5 - 1: Invited Development of FEDs
10:30
S. Itoh, M. Tanaka, T. Tonegawa, M. Taniguchi,
K. Tamura, Y. Marushima, Y. Fujimura, M. Namikawa,Y. Naito, F. Kataoka, K. Nawamaki, Y. Kubo, T. Niiyama,
Y. Takeya, K. Deguchi, S. Kawata, Y. Sato, T. Yamaura
Futaba, Japan
Spindt-type color Field Emission displays (FEDs) are supplied ascommercial products. The carbon nanotube(CNT) FED panel is underdevelopment as for information board. FEDs are self-emissive display,and have the potential not only to realize high contrast ratio, highresponse speed and superior grayscale expression for video picture
image, but also to get a low power consumption. The present status of
FEDs with Spindt-type and nano-carbon emitters are reported in thispaper.
FED2/PH5 - 2
11:00

White Light Emission from a Carbon Naotube Field
Emitter Backlight Unit Using Two Phosphors System
H. S. Jang, J. H. Kang, S. Lee*, D. Y. Jeon
KAIST, Korea*Samsung SDI, Korea

Cathodoluminescence property of Y3Al5O12:Ce3+ (YAG:Ce) andZnS:Ag,Cl phosphor mixture was investigated. Although YAG:Ceshowed weak yellow emission under irradiation of electron beam,
YAG:Ce mixed with ZnS:Ag,Cl showed stronger yellow emission.
Stronger yellow emission ascribed to blue light absorption of YAG:Cephosphor as well as electron irradiation. A carbon nanotube (CNT) fieldemitter backlight unit (FE-BLU) was fabricated by using CNT cathodeand phosphor (YAG:Ce + ZnS:Ag,Cl) anode and two band white light
was generated from the CNT FE-BLU.

135

Friday
FED2/PH5 - 3
11:20

December 8
A Study on Bank-Wised Driving Schemes for a 20-in.
CNT Backlight Unit
C.-C. Liang, C.-N. Huang, Y.-S. Kuo, B.-N. Lin, C.-H. Fu,
T.-H. Tsou, W.-Y. Lin, M.-H. Lin
ITRI, Taiwan

Using PWM scheme to drive Carbon Nanotube Backlight Units (CNTBLUs) can well utilize the persistence of their phosphors and hence
increase the illuminating efficiency. Divide a CNT-BLU into several
banks and drive them separately can gain more advantages than theilluminating efficiency. This paper proposed bank-wised driving
schemes for CNT-BLUs developed by DTC/ITRI. Their illuminating
efficiencies are experimentally evaluated. From these evaluations,several interesting properties of the CNT-BLUs and the proposed
driving methods can be obtained.

Author Interviews
17:00 – 18:00
Sponsors:
The 126th Research Committee on Mutual Convention between Lightand Electricity, JSPS
Phosphor Research Society, The Electrochemical Society of Japan

AD ’07
Asia Display 2007
March 12–16, 2007
Shanghai, China
http://ad07.ecnu.edu.cn/
136Friday

December 8

Workshop on Field Emission Display
Friday, December 8
9:00 - 9:10

Ohmi 9Opening
Opening Remarks
9:00
M. Takai, Workshop Chair
9:10 - 10:15

Ohmi 9

FED1: FEDs and Novel Devices
Chair:
Co-Chair:H. Mimura, Shizuoka Univ., Japan
S. Itoh, Futaba, Japan

FED1 - 1
9:10

Development of High Resolution Spindt-Type FED
K. Sakurada, M. Kitada, T. Niiyama, M. Namikawa,Y. Takeya, M. Tanaka
Futaba, JapanWe evaluated the possibility of high-resolution FED by the Spint type
cathode. Since high electron emission of a single emitter is one of thecharacteristics of the Spindt cathode, the number of emitters per pixel
reduced by improving stability of each emitter. In this report, theproperties of the newly developed 1.4-inch high resolution FEDs andevaluation results of emission performance under low emitter densitywith Spindt-type emitter were described.
FED1 - 2
9:25

High-Luminance CNT-FED for Half-Meter-Size
Character-Displays
J. Yotani, S. Uemura, T. Nagasako, H. Kurachi,
H. Yamada, T. Ezaki, T. Maesoba, T. Nakao, M. Ito,
A. Sakurai, H. Shimoda, Y. Saito*
Noritake., Japan*Nagoya Univ., Japan

A prototype of high-luminance CNT-FED character display was
performed for half-meter-size character-displays. The display-panel had
48x480dots. The color-pixel pitch was 3mm. In order to realize highluminance and high manufacturing -yield, the new structure using aflexible gate substrate was developed. The configuration of the displaypanel was a metal-backed color-phosphor screen with 1mm-tallspacers, a metal gate-substrate with 1mm-tall ribs on anode-side andshallow ribs on cathode side of the gate substrate and a cathode
substrate with CNT-deposited metal electrodes.

137Friday

December 8

FED1 - 3
9:40

Development of CNT Cathodes for Triode Type FEDs
by Liquid-Phase Fabrication
Y. Z. Chen, C. C. Kuo, J. S. Fang, S. H. Lee, J. T. Hsu,
S. C. Hsiao, F. Yang, W. S. Hsu, C. H. Hsiao, W. C. Yao,
S. H. Chen*, C. Y. Hsiao*, K. Cheng, B. Gao**, O. Zhou**,
T. F. Chan*
TECO Elec. & Machinery, Taiwan*
TECO Nanotech, Taiwan**Xintek, USA

The liquid-phase CNTs deposition process has been successfully
applied to fabricate triode FED structures. We manufactured theprototype CNT-FED panels of 8-in. in diagonal and 160x3x120 subpixels through vacuum sealing of the normal gate cathode and color
anode. The switching voltage of the normal gate structures can be lower
than 80 V and the color video images are obtained.
FED1 - 4:
9:55

Invited 640x480 Pixel HARP Image Sensor with
Active-Matrix Spindt-Type FEA
M. Nanba, Y. Hirano, Y. Honda, K. Miyakawa, Y. Ookawa,
T. Watabe, S. Okazaki, N. Egami, K. Miya,
K. Nakamura*, M. Taniguchi*, S. Itoh*
NHK, Japan*Futaba, JapanA new Spindt-type FEA equipped with an active drive circuit wasdeveloped for ultra-high sensitivity compact HARP image sensors. The
FEA has 640 × 480 pixels, which is equal to the VGA format, and the
pixel size is 20 × 20 µm. Our experiments on a fabricated 1-inch HARP
image sensor with the FEA revealed that the prototype sensor could
obtain sufficient resolution as a VGA image sensor, high sensitivity, anda wide dynamic range by convenient operation.
----- Break -----

138

Friday

December 8

10:30 - 11:40

Ohmi 9FED2/PH5: Phosphors for FED and FEA Backlight Unit
Chair:
Co-Chair:N. Egami, NHK, Japan
T. Hisamune, KASEI OPTONIX, Japan

FED2/PH5 - 1: Invited Development of FEDs
10:30
S. Itoh, M. Tanaka, T. Tonegawa, M. Taniguchi,
K. Tamura, Y. Marushima, Y. Fujimura, M. Namikawa,Y. Naito, F. Kataoka, K. Nawamaki, Y. Kubo, T. Niiyama,
Y. Takeya, K. Deguchi, S. Kawata, Y. Sato, T. Yamaura
Futaba, Japan
Spindt-type color Field Emission displays (FEDs) are supplied ascommercial products. The carbon nanotube(CNT) FED panel is underdevelopment as for information board. FEDs are self-emissive display,and have the potential not only to realize high contrast ratio, highresponse speed and superior grayscale expression for video picture
image, but also to get a low power consumption. The present status of
FEDs with Spindt-type and nano-carbon emitters are reported in thispaper.
FED2/PH5 - 2
11:00

White Light Emission from a Carbon Naotube Field
Emitter Backlight Unit Using Two Phosphors System
H. S. Jang, J. H. Kang, S. Lee*, D. Y. Jeon
KAIST, Korea*Samsung SDI, Korea

Cathodoluminescence property of Y3Al5O12:Ce3+ (YAG:Ce) andZnS:Ag,Cl phosphor mixture was investigated. Although YAG:Ceshowed weak yellow emission under irradiation of electron beam,
YAG:Ce mixed with ZnS:Ag,Cl showed stronger yellow emission.
Stronger yellow emission ascribed to blue light absorption of YAG:Cephosphor as well as electron irradiation. A carbon nanotube (CNT) fieldemitter backlight unit (FE-BLU) was fabricated by using CNT cathodeand phosphor (YAG:Ce + ZnS:Ag,Cl) anode and two band white light
was generated from the CNT FE-BLU.

139

Friday
FED2/PH5 - 3
11:20

December 8
A Study on Bank-Wised Driving Schemes for a 20-in.
CNT Backlight Unit
C.-C. Liang, C.-N. Huang, Y.-S. Kuo, B.-N. Lin, C.-H. Fu,
T.-H. Tsou, W.-Y. Lin, M.-H. Lin
ITRI, Taiwan

Using PWM scheme to drive Carbon Nanotube Backlight Units (CNTBLUs) can well utilize the persistence of their phosphors and hence
increase the illuminating efficiency. Divide a CNT-BLU into several
banks and drive them separately can gain more advantages than theilluminating efficiency. This paper proposed bank-wised driving
schemes for CNT-BLUs developed by DTC/ITRI. Their illuminating
efficiencies are experimentally evaluated. From these evaluations,several interesting properties of the CNT-BLUs and the proposed
driving methods can be obtained.
----- Lunch -----

13:15 - 15:15

Ohmi 9

FED3: CNT-FEs for FEDs
Chair:
Co-Chair:S. Uemura, Noritake, Japan
S. Nakata, Mitsubishi, Japan

FED3 - 8L
13:15

Development of Key Technologies for CNT-FED
S. Nakata, T. Takahashi, S. Okuda, A. Hosono
MITSUBISHI Elec., Japan

We have developed the key-technologies for fabricating spacer-free
FEDs. The developed cathode plate has showed the performance of thedriving voltage less than 40V. The black-matrix and phosphor of thefront panel have been successfully patterned with the position error lessthan 20µm without any degradation of the phosphor properties.
FED3 - 1
13:30

A Particle Blasting Method to Improve the CNT-FED
Manufacturing
M. Liu, C. N. Mo, M. C. Chiang, C. Y. Hsu
Chunghwa Picture Tubes, Taiwan

We have fabricated a 25 mm x 25 mm CNT-FED with a space of lessthan 400 µm by printing technology. The particle blasting method was
utilized to improve the CNT emission characters when the particles hit
the cathode surface, which of the materials is removed. Then the CNT
fiber would slowly protrude on the cathode surface after the particle
blasting. This novel method provides a low cost and easy way for large
size CNT-FED manufacturing in the future.

140

Friday
FED3 - 2
13:45

December 8
Influence of Reactive Ion Etching on KrF Laser
Surface Treatment of CNT Cathodes
K. Ohsumi, T. Honda, W. S. Kim, C. B. Oh, K. Murakami,
S. Abo, F. Wakaya, M. Takai, S. Nakata*
Osaka Univ., Japan*Mitsubishi Elec., JapanThe emission characteristics of carbon nanotube (CNT) cathodes withand without reactive ion etching (RIE) process followed by KrF laser
irradiation were investigated. The emission characteristics of CNT
cathodes without RIE process strongly depend on laser power density.
The emission characteristics of CNT cathodes with RIE process,however, are almost uniform with laser power density.
FED3 - 3
14:00

Field Emission Characteristics of CNT Cathode
Treated by Plasma and Laser Irradiation
W. S. Kim, T. Honda, C. B. Oh, K. Ohsumi, K. Murakami,
S. Abo, F. Wakaya, M. Takai
Osaka Univ., JapanAn effect of Ar plasma treatment of carbon nanotube cathodes followedby krypton fluoride laser irradiation on field emission (FE)characteristics was investigated. With an Ar plasma treatment of 100W,
the FE current density was increased after laser irradiation. The
emission site density of the sample with 100W plasma treatment wasalso increased by 25 times than that without plasma treatment.
However, the further increase in plasma power beyond 100W
deteriorated both FE characteristics due to the excess plasma damage.
FED3 - 4
14:15

Novel Positioning Technology of CNTs for Electron
Emitter Array
K. C. Park, J. H. Ryu, K. S. Kim, Y. Y. Yu, J. H. Moon,
J. Jang
Kyung Hee Univ., Korea

We have developed novel growth technique for carbon nanotubes(CNTs) by using resist assisted patterned growth. The CNTs can begrown directly on the patterned catalyst surface without diffusion barrier.
The novel positioning technique for CNTs growth could be applicable toelectron emitter array for nano-electronic device.
FED3 - 5
14:30

Improvement of Emission Characteristics by SiO2Containing Catalyst for GNF-FED
M. Ushirozawa, K. Hagiwara, T. Sakai
NHK, Japan

Catalyst geometry is an essential factor for controlling the growth ofgraphite nanofiber by thermal CVD. A new catalyst containing silicon
dioxide was developed. This catalyst is effective for two aspects of the
field emitter for FEDs: one is that the nanometer-sized catalyst particles
separated by SiO2 result in a fine fiber, and the other is that the fiber
diameter becomes almost uniform, suggesting that emission uniformity
can be improved.
141

Friday

December 8

FED3 - 6
14:45

Controlling of E-Beam Trajectory by Tapered MacroGate for Various Field Emission Applications
J. -W. Jeong, D. -J. Kim, J. -S. Oh, Y. -H. SongETRI, Korea

We report the controlling of e-beam trajectory by TMG proposed for
CNT field emitters in the last year. The TMG has relatively tall andtapered holes, showing a high e-beam focusing and perfect shielding of
CNT emitters from the anode voltage for FED. For FE lamp(FEL)
application, we modified the TMG to have two separate gate electrodes
against gate holes. The alternating driving of the two gate electrodes ofthe modified TMG showed a wide e-beam spreading suitable for FEL.
FED3 - 7
15:00

Electron Emission Properties of CNTs Grown with
Selective Positioning TechniqueJ. H. Ryu, Y. Y. Yu, K. S. Kim, J. H. Moon, K. C. Park,J. Jang
Kyung Hee Univ., Korea

The electron emission properties of carbon nanotubes (CNTs), grownwith selective positioning technique, were studied with various numberof emitters. Various numbers of island-emitters were grown andmeasure the electron emission properties by using diode structure. The
total electron emission characteristic shows very linear properties withnumber of island emitters.
----- Break -----

142

Friday

December 8

15:30 - 17:00

Ohmi 9

FED4: FED Driving Methods and FE Materials
Chair:
Co-Chair:J. Ishikawa, Kyoto Univ., JapanY. Iguchi, Sony EMCS, Japan

FED4 - 1
15:30

An Amplitude-Modulated Driving System with MultiScaled Clocks for Linear Gamma Correction of an 8in. CNT FED
C.-N. Huang, C.-C. Liang, P.-S. Wu, T.-A. Chen,
Y.-S. Kuo, W.-C. Yao*, K.-S. Chen*, C.-C. Kuo*,
J.-S. Fang*
ITRI, Taiwan*TECO Elec. & Machinery, Taiwan

An amplitude-modulated driving system is developed for exhibiting fullcolor images on an 8” carbon nanotube field emission display (CNTFED). For solving the nonlinear gamma problem associating with thehighly nonlinear I-V curve of CNT-FEDs, a multi-scaled clock scheme is
proposed to conduct linear gamma correction. Experiments show thatthe driving system can successfully display full-color images on the
CNT-FED, and after applying the proposed scheme, RGB gray levels
are substantially increased by the linearized gamma curves of the CNTFED.
FED4 - 2
15:45

A New Driving Method for Active-Matrix FED
D. -J. Kim, J. -W. Jeong, J. -S. Oh, Y. -H. SongETRI, Korea

We present a new driving method of current scanning for active-matrix
field emission display (AMFED) to improve image quality. The currentscan driving is to use current sources for scan signals instead of
conventional voltage pulses, and the current sources are addressed tothe source electrode of a-Si TFT used as a switching device of AMFED.
The developed currentscan driving showed a better image quality thanconventional voltage driving for the AMFED with carbon nano-tube
emitters.
FED4 - 3
16:00

A Macro-Modeling Approach to Integrate CNT Field
Emission Triode Devices into Circuit Simulations
X. Guo, S. R. P. Silva
Univ. of Surrey, UK

The advances of using carbon nanotube (CNT) triode structure fieldemission (FE) devices for display applications require an accurate andefficient SPICE compatible device model for evaluating their electricalbehaviors in the early circuit and system design stage. This paper
presents a macro-modeling approach, which can accurately andefficiently model the CNT triode FE devices independent of the device
process and physical structures for circuit simulations.

143

Friday

December 8

FED4 - 4
16:15

Electron Emission from Metal-Oxide-Semiconductor
Cathodes Based on Nanocrystalline Silicon
H. Shimawaki, Y. Neo*, H. Mimura*Hachinohe Inst. of Tech., Japan*Shizuoka Univ., Japan

We have fabricated planar cathodes based on nanocrystalline Sicovered with a thin oxide film deposited by using a pulsed laser ablation
technique and examined their emission characteristics. The electron
emission occurred at the gate voltage higher than the work function of
the gate metal, and the emission efficiency about 4% was achieved.
FED4 - 5
16:30

Work Function Measurement by Use of
Photoemission Electron Microscope
Y. Nakano, K. Yamane, H. Nakane, H. Adachi
Muroran Inst. of Tech., JapanWork function of ZrO/W(100) surface has been successfully measured
by the use of Photoelectron emission microscope (PEEM) to be 2.7eVwith the Fowler plot[1]. This value fairly coincide to the widely acceptedvalues of 2.7-2.9eV determind by use of Fowler-Nordheim plot for fieldemission current [2]. We have expected photo-emission current gives
more directly the work function as a physical constant[3] than fieldemission current to which Fowler Nordheim plot can be applied.
FED4 - 6
16:45

LEED and XPS Analyses on W(100) Surface Modified
with Yttrium Oxide
T. Kawakubo, N. Miyamoto, H. Nakane, H. Adachi
Muroran Inst. of Tech., JapanThe work function determined by use of the Fowler Nordheim plot on amodified surface of W(100) with yttrium oxide, which is denoted by YO/
W(100), has been reported 2.0 eV, which is much smaller than thevalues of 2.7. 2.9 eV for ZrO/W(100) conventional thermal field emitters.
In situ analyses of XPS and LEED on the YO/W(100) are going on.
Tentative results of LEED show a smeared periodic pattern, depending
on depositing conditions of yttrium.

Author Interviews
17:00 – 18:00
Sponsor:159th Committee on Vacuum Nanoelectronics, JSPS

144

Wednesday

December 6

Workshop on Organic LED Displays
Wednesday, December 6
13:20 - 14:50

Ohmi 10

OLED1: OLED Technology
Chair:
Co-Chair:J. J. Brown, Universal Display, USA
C. Adachi, Kyushu Univ., Japan

OLED1 - 1: Invited Twenty Years of Research and Development
13:20
on Organic Electroluminescent Devices
T. Tsutsui
Kyushu Univ., Japan
Pre-history of research and development on organic electroluminescentdevices before the appearance of “Kodak break-through” in 1987, is
examined based on early studies on organic electroluminescence.
Next, we try to pick out some important key messages from Kodak
break- through. Then, the impacts of the Kodak break-through on the
research and development of organic electroluminescent devices
during ten years after 1987 is discussed. Finally, discussions on the
future of organic electrolumienscent devices will be added.
OLED1 - 2
13:50

Development of New Materials in Polymer Light
Emitting Diodes
N. Akino, C. Sekine, J. Pillow
Sumation, Japan

Improvement of the efficiency and lifetime is crucial in light emitting
diodes. In this presentation, computational modeling as one of ourapproaches will be introduced, and also device performance with oursolution processable red phosphorescent materials will be presented,
where we have achieved CIE=(0.67,0.32) with the lifetime of LT50 95khrs at 400cd/m2 and an efficiency of 11cd/A. Some other data
including fluorescent materials will also be presented.
OLED1 - 3
14:10

Evaluation of RGB OLED Stacks on CMOS
Microdisplay Substrates
U. Vogel, D. Kreye, M. Töerker, J. Amelung
Fraunhofer Inst. for Photonic Microsystems, Germany

Highly efficient, low-voltage organic light emit-ting diodes (OLEDs) are
well suitable for the inte-gration into a CMOS-process. Different RGBOLED-stacks with doped charge transport layers were prepared on
different two metal layer CMOS test substrates without active transistor
area. Afterwards, the different test displays were measured andcompared with respect to their per-formance (current, luminance,
voltage, luminance dependence on viewing angle, optical outcouplingetc.).

145

Wednesday
OLED1 - 4
14:30

December 6
Development of High Performance OLED Included
Wet Coating Film in Organic Layer Structure
I. Kashima, K. Harada, K. Monzen, T. Wakimoto,
A. Yoshihara
Optrex, Japan

We study the RGB fluorescent OLED using wet coating film in hole
injection layer(Sp-OLED) to get low driving voltage, high current
efficiency and high external quantum efficiency. And the efficiency of
the Sp-OLED could be improved by optimizing the interference effects
and the device structure. As a result the green Sp-OLED index perform
at a current efficiency of 30.5cd/A, external quantum efficiency of 7.5%
and driving voltage of 3.5V at 10mA/cm2.
----- Break -----

15:05 - 16:35

Ohmi 10

OLED2: Device Technology
Chair:
Co-Chair:T. Tsutsui, Kyushu Univ., Japan
S. Tokito, NHK, Japan

OLED2 - 1: Invited Low Power Consumption Technologies for a
15:05
Full-Color AMOLED Display
G. Harada, H. Kanno, T. Kinoshita, Y. Nishio, K. Shibata
SANYO Elec., Japan
A couple of technologies for realizing a high-performance and lowpower consumption AMOLED using white emitter with color-filter arrayare presented. One is new OLED structure, which can reduce a driving
voltage. The other is an RGBW pixel format, which can decrease thepower consumption down to a half value in comparison with that ofconventional RGB pixel format. By combining two technologies, we canreduce power consumption to 1/3, and improve the lifetime by threetimes compared with conventional AMOLED.
OLED2 - 2
15:35

Operating Physics and Newly Developed
Technologies of AM-Full Color OLEDs Based on
Advanced Color Conversion Method
Y. Terao, H. Kimura, Y. Kawamura, K. Kawaguchi,
Y. Nakamata, C. Li, N. Kanai, R. Teramoto, K. Sakurai
Fuji Elec. Advanced Tech., Japan

A simple ray-optical analysis shows that the improved coupling between
CCM and EL accounts for the conversion-efficiency enhancement inadvanced-CCM. The top-emitting configuration with advanced-CCM is
promising. Then the inverted top-emitting OLEDs are studied so that ntype a-Si TFT can be used. The simple bilayer device is proposed tosee the electron-injection nature of inverted OLEDs. Finally AM-OLED
display with advanced-CCM is first demonstrated.

146

Wednesday
OLED2 - 3
15:55

December 6
Effects and Mechanism Aspect of Organic-Metal
Oxide Composites
Y. Iwaki, H. Ikeda, J. Sakata, S. Seo, T. Aoyama,
T. Kawakami, R. Nomura, S. Yamazaki
Semiconductor Energy Lab., Japan

OMOx, a composite consisting of an organic hole-transporting material
and molybdenum oxide, acts as a very useful buffer layer for organic
light emitting diodes (OLEDs) because of its high conductivity. We will
discuss the band structure of OMOx and the mechanism of the electrontransfer process between molybdenum oxide and organic compounds
based on computational calculations.
OLED2 - 4
16:15

Nickel Oxide Buffer Layers on Amorphous ITO
Anodes for Flexible Organic Light-Emitting Diodes
with Extended Driving Lifetimes
K. Akedo, A. Miura, K. Noda, H. Fujikawa
TOYOTA Central R&D Labs., Japan

We have investigated several metal-oxide buffer layers on amorphous
ITO anodes for flexible OLEDs in order to extend their driving lifetimes,
and have found that the 3-nm-thick NiOx buffer layer was the mostappropriate one. The half-decay driving lifetime of the OLED with the
NiOx buffer layer showed six times longer than that without the NiOx
buffer layer. This is because the NiOx buffer layer prevented the organic
layer from oxidation by unstable amorphous ITO.
----- Break -----

16:50 - 18:00

Ohmi 10

OLED3: Phosphorescent OLED
Chair:
Co-Chair:G. Harada, SANYO Elec., Japan
J. Kido, Yamagata Univ., Japan

OLED3 - 1: Invited Full-Color Phosphorescent OLEDs
16:50
J. J. Brown
Universal Display, USA
A phosphorescent white organic light-emitting device exhibits anexternal quantum efficiency of 14% (or 25% with outcoupling
enhancements) at 1,000 cd/m2, has CIE coordinates that vary between(0.47, 0.45) at 1,000 cd/m2 and (0.46, 0.46) at 5,000 nits; 97% of theemission power is between 470 nm and 750 nm. The operational
lifetimes 500 cd/m2 from an initial luminance of 1,000 cd/m2 is -21,000
hours. These results demonstrate the great promise of phosphorescent
white devices for both displays and lighting.
OLED3 - 2
17:20

Withdrawn

147

Wednesday
OLED3 - 3
17:40

December 6
Flexible Color OLED Display Based on
Phosphorescent Materials Fabricated by Ink-Jet
Printing
M. Suzuki, T. Tsuzuki, T. Koyama*, T. Yamaguchi*,T. Furukawa**, S. Tokito
NHK, Japan*Showa Denko, Japan**
Kyodo Printing, Japan

We have demonstrated a flexible phosphorescent organic light-emitting
diode (OLED) display fabricated by using ink-jet printing. We usediridium complexes and non-conjugated polymer as the guest and hostsystem for the RGB emitting layers. The ink-jet inks were optimized forjetting reliability and film uniformity. ITO anode and bank structures
were precisely formed on a plastic film by using a transfer technique. An
example video image generated with the passive-matrix driving method
was clearly observed.
OLED3 - 4L
17:20

High-Conductive PEDOT/PSS for ITO-Substitution in
OLEDs
A. Elschner, F. Jonas, S. Kirchmeyer, W. Lövenich,
N. Koch*, K. Fehse**, M. Pfeiffer**, K. Walzer**, K. Leo**
H.C. Starck GmbH, Germany*
Humboldt-Univ., Germany**Tech. Univ. Dresden, Germany

Waterborne dispersions of PEDOT/PSS are exploited as hole-injection
layers in OLEDs to planarize the ITO surface and to improve holeinjection. With BAYTRON®PH 500, a new product has been designedwith good film forming properties and a conductivity of 500 S/cm toreplace ITO on flexible substrates and to be used as transparent anodefor OLED lighting. Due to its relative small refractive index of n = 1.41 at
550 nm, this polymer gives rise to better light out-coupling as comparedto ITO.

Author Interviews
18:00 – 19:00

148Thursday

December 7
Thursday, December 7

9:00 - 10:25

Ohmi 2

AMD4/OLED4: AM-OLED
Chair:
Co-Chair:R. Hattori, Kyushu Univ., Japan
M. Inoue, TPO Displays Japan, Japan

AMD4/OLED4 - 1: Invited Current Status of, Challenges to, and
9:00
Perspective View of AM-OLED
H. N. Lee, J. W. Kyung, S. K. Kang, D. Y. Kim,
M. C. Sung, S. J. Kim, C. N. Kim, H. G. Kim, S. T. Kim
LG Elect., Korea
ZnO and IGZO TFTs were fabricated by conventional photo-lithography
and wet-etching process. ZnO and IGZO TFTs showed high mobility of
66 cm2/Vs and 157 cm2/Vs, and high on/off ratios of 7.6 x 106 and 1.1 x
107, respectively. In addition, the IGZO TFT array was successfully
fabricated to drive the OLED device on it. Therefore, it can besuggested that the oxide TFT be one of the promising candidates as a
backplane for OLED device.
AMD4/OLED4 - 2: Invited Novel Active-Matrix Panel with Organic Light9:25
Emitting Field-Effect Transistor
Y. Oku, N. Shimoji, T. Tanabe*, S. Akiyama**,T. Oyamada***, H. Uchiuzou***, C. Adachi****,
K. Matsushige*****
Rohm, Japan*Pioneer, Japan**
Mitsubishi Chem., Japan***Chitose Inst. of S&T, Japan****Kyushu Univ., Japan*****Kyoto Univ., Japan
We successfully demonstrated a novel active-matrix panel having anorganic light-emitting field-effect transistor (OLEFET) on a Si substrate.
An OLEFET, a switching transistor, and a capacitor were integrated into
each pixel. As an OLEFET material, tetraphenylpyrene (TPPy) dopedwith rubrene at 1wt% was employed. The switching transistor was
fabricated with pentacene. All organic transistors are bottom-contacttype, using conventional photolithography. An 8x8 display panel clearly
showed moving characters.

149

Thursday
AMD4/OLED4 - 3
9:50

December 7
Pulse-Width Modulation with Current
Uniformalization for TFT-OLEDs
M. Kimura, M. Kato, Y. Hara, S. Sawamura, H. Hara*,
T. Okuyama*, S. Inoue*, T. Shimoda*
Ryukoku Univ., Japan*
Seiko Epson, Japan

A novel driving concept, “pulse-width modulation with current
uniformization”, is proposed for TFT-OLEDs. An example of this driving
concept is a combination of “pulse-width modulation with self-biased
inverter” and “time-ratio grayscale with current uniformization”. Its
driving operation is confirmed using circuit simulation. It is found that
this driving method can compensate characteristic deviations anddegradations of both TFTs and OLEDs and exceedingly improveluminance uniformity. Moreover, it does not need high-speed scanningeven for high-resolution and many-grayscale displays.
AMD4/OLED4 - 4L
10:10

A New Pixel Circuit Employing Data Reflected
Negative Bias Annealing to Improve the Current
Stability of a-Si:H TFT AMOLED
S.-M. Han, H.-S. Park, J.-H. Lee, M.-K. Han
Seoul Nat. Univ., Korea

We proposed a new pixel circuit employing data reflected negative bias
annealing to improve the current stability of a-Si:H TFT AMOLED. The
proposed 5 TFTs pixel is can apply the negative VGS, which is
proportional to the previous emitting VGS of the TFT, to the driving aSi:H TFT by using its own data signal so that suppress its degradationinduced by positive gate bias effectively. The data reflected negative
bias annealing of pixel was proved by a SPICE simulations.

Author Interviews
18:40 – 19:40

150

Thursday

December 7

9:00 - 12:00

Ohmi 5-7

Poster OLEDp: OLED Poster
OLEDp - 1

Pyrolysis Behavior of Blue Alq3 Derivatives in
Thermal Process
J.-A. Cheng, Y. Yang*, C. H. Chen, H.-P. D. Shieh,
T. Negishi*Nat. Chiao Tung Univ., Taiwan*ULVAC, Japan

In order to study the blue and soluble Alq3.based derivates that fail tosublimate, a series of developable solutions and thermally stable
aluminum quinolates with different sulfon reactants were synthesized.
The physical and chemical attributes of these chelates were
investigated and thoroughly characterized by using the X-ray diffraction
method, 1H NMR and thermal gravity analysis. In this study we also
explored the mechanisms involved in the thermal decomposition that
occurs during the sublimation process.
OLEDp - 2

The Effects of the Bidentate Ligand on the
Cyclometalated Iridium Complexes
W. Ding, C. Liu, X. Hou, M. Yu*
Xiian Jiaotong Univ., China*
Irico Group Tech. Ctr., China

Iridium based complexes with same cyclometalated ligand (2phenpyridine) and different bidentate ligand (acetylacetone, 2, 2’bipyridine, phenanthroline) were synthesized and investigated. The
emission λmax has a shift from 510nm to λ= 570nm, indicated that theemission color is not only dependent on the cyclometalating ligand, butalso can be changed by the bidentate ligand. Farther theoreticallycalculated results in quantum chemistry indicated that the emission
color can be affected by the bidentate ligand’s conjugate degree.
OLEDp - 3

Highly Stable Electron Transporters and Electron
Injectors for the Enhancement of Life-Time,
Efficiency and Reduction in Operating Voltage
P. Kathirgamanathan, S. Ganeshamurugan,
S. Surendrakumar, M. Kumaraverl, G. Paramaswara,
A. Partheepan, S. Ravichandran
OLED-T, UK

OLEDs are becoming established as a commercially viable flat panel
display technology of choice. For OLEDs to function effectively, highly
thermally stable materials, which offer high efficiency and long
operational lifetimes are required. This paper reports a unique patented
electron transporter (E246) that increases the lifetime and efficiency
and reduces operating voltage. Further, an electron injector, EEI-101,
which evaporates at a very low temperature of 300°C as opposed to theconventional LiF, which requires 580°C, is also presented.

151

Thursday
OLEDp - 4

December 7High Efficiency Green-Light-Emitting
Phosphorescent Organic Devices Having a Carrier
Transporting Polymer Layer
Y. Nishita, Y. Mizuno, A. Imamura, A. Mikami
Kanazawa Inst. of Tech., Japan

Phosphorescent organic devices consisting of carrier transporting
polymer and light-emitting small molecule layers have beencharacterized from electrical and optical viewpoints. It was found thatvery thin polymer layer significantly enhances the performance such as
luminance and emission efficiency. The optimized device showed an
external quantum efficiency of 23 % (87 cd/A) and a power efficiency of
55-lm/W.
OLEDp - 5

Color-Variable Organic Light-Emitting Device byExternal Light Irradiation -Approach to High Efficient DeviceK. Sakaguchi, M. Chikamatsu, Y. Yoshida, R. Azumi,
K. YaseAIST, Japan

We have developed an organic light-emitting device whose emission
color is controllable by external light. Photoirradiation to a titanyl
phthalocyanine layer inserted between blue- and green- emission layers
controls the charge recombination site from one layer to the other,resulting in the different emission color with and without external light.
By tuning a hole blocking layer and a cathode, the device efficiency was
optimized. Ca and LiF/Al cathodes provided more effective devicecompared with Mg:Ag.
OLEDp - 6

Enhanced Hole-Injection in Organic Light-Emitting
Devices by Utilizing F4-TCNQ and the Interface
Analysis by Ultraviolet Photoelectron Spectroscopy
K.-Y. Peng, C.-C. Lee, C.-T. Lee*, C.-I. Wu*
AU Optronics, Taiwan*Nat. Taiwan Univ., Taiwan

An thin F4-TCNQ layer on ITO substrate can enhance hole injection inorganic light-emitting devices, as the uniformly p-doped hole-transportlayer. The F4-TCNQ layer between ITO and hole-transport layer
reduces the operation voltage and raises the current efficiency. Such
results are evidenced by ultraviolet photoelectron spectroscopy
analysis, which reveals that both the thin F4-TCNQ layer and the pdoped hole-transport layer can decrease hole injection barrier from 1.05
eV to 0.35 eV.

152

Thursday
OLEDp - 7

December 7
Fabrication of Organic Light Emitting Device on theSpray-CVD Derived Tin-Doped Indium Oxide AnodeS. Seki, M. Wakana, Y. Kasahara, T. Kondo, M. Wang,
T. Uchida, M. Ohtsuka, Y. Sawada
Tokyo Polytech. Univ., Japan

Tin-doped In2O3 films are mainly manufactured by physical vapor
deposition (PVD). The present authors reported ITO films deposited bya unique system of spray-CVD with lower production costs. The lowest
value of resistivity (7.9 × 10-5 Ω・cm) was compatible with the lowest
values obtained by the PVD process. We report the organic lightemitting device (OLED), L-V and J-V curves of which were almost equal
to the OLED on commercial ITO, fabricated on the ITO anode depositedby the unique spray-CVD.
OLEDp - 8

The Characterization of the Gas Barrier Comprising
Parylene-C Thin Films for Flexible OLED Application
J.-Y. Liao, P.-C. Liu, C.-H. Hsiao*, C.-L. Huang*,
J.-H. Lee*, C.-S. Chang, M.-R. Tseng
ITRI, Taiwan*Nat. Taiwan Univ., Taiwan

In order to provide OLED devices with a water-resistive protection in theflexible application, the multilayer barrier comprising Parylene-C and
ICP-CVD fabricated SiNx or SiOx is studied. The surface roughness of
the Parylene-C film and the optical as well as barrier properties of SiNx
and SiOx films are characterized individually. In addition, thetransparent Ca test method is proposed to evaluate the WVTR of themultilayer barrier.
OLEDp - 9

Optical Simulation and Characterization of Full Color
Organic Light Emitting Diodes with Color Filter on
Array Structure
C. K. Tseng, H. L. Hsu, L. C. Wei, W. F. Chien, H. C. Wu,
R. Nishikawa, Y. M. TsaiTPO Displays, Taiwan

A simulation method of OLED with color filter on array (COA) was
introduced. In the RGB side-by-side OLED with COA structure it can gethigh transmittance in red, green and blue lights and very high NTSC
ratio. A previous simulation method was revised to predict the OLEDwith COA processes results. In the simulation method, by combining thecaptured OLED spectrum with the characteristics of color filter, theexperimental results can thus be predicted.

153

Thursday
OLEDp - 10

December 7
Investigation of O2 Plasma Treatment Conditions of
ITO for High Efficiency of Organic Light Emitting
DiodesW.-J. Shin, J.-H. Kim, M.-C. Oh, J.-C. Kim, T.-H. Yoon
Pusan Nat. Univ., Korea

To increase the hole injection efficiency of OLED, surface potential
modification by the O2 plasma treatment on ITO surfaces was examined
systematically. The operating voltage was decreased from 11.8 V to 9.0
V and the power efficiency was increased from 1.5 lm/watt to 2.0 lm/
watt at 100 mA/cm2. Based on the Schottky emission current model, it
was confirmed that the energy barrier for the hole injection was reduced
to 0.5 eV from 1.1 eV by O2 plasma treatment.
OLEDp - 11

Highly Efficient Polarized Polymer Light-Emitting
Diodes Prepared by Friction-Transfer Technique
M. Misaki, S. Nagamatsu, M. Chikamatsu, Y. Yoshida,
N. Tanigaki, R. Azumi, Y. Ueda*, K. Yase
AIST, Japan*
Kobe Univ., JapanWe demonstrate highly efficient polarized polymer light-emitting diodes(p-PLEDs) for liquid crystal display (LCD) backlights application. The
optimization of the device structure drastically improves theperformance of p-PLEDs: the devices turn on at 4 V and reach abrightness of 1793 cd/m2 at 12.5 V with an efficiency of 1.23 cd/A. The
electroluminescent (EL) dichroic ratio (integrated intensity) is estimatedto be 45.
OLEDp - 12

Organic Light Emitting Display with a Single Isolation
Structure Using a Half-Tone Mask
Y. H. Lee, S. W. Youn, K. S. Kim, K. H. Choi, S. J. Yi,
D. H. Choi
Daewoo Elect., Korea

We have developed a single isolation structure using a half-tone maskfor PMOLEDs. In the single isolation structure, three exposure
processes were reduced to two exposure processes using a half-tonemask. The half-tone composed of multiple slits in the half-tone mask
caused a problem of the insulator thickness deviation, but it was settled
by designing the half-tone pattern and modifying the separator mask
design. Compared with the conventional double layered isolation
structure, the fabrication processes could be reduced to 64%.

154

Thursday

December 7

OLEDp - 13

Gas Permeability Measurement Method by Electrical
Analysis of Calcium Degradation for Organic
Electronics
J. H. Choi*, Y. M. Kim*’**, Y. W. Park*, J. H. Seo*,
J. W. Lee**, S. J. Bae*’**, B. K. Ju**
Korea Univ., Korea**
Korea Inst. of S&T, Korea

The measurement method to characterize barrier coated plastic film
relative to water and oxygen permeation for organic electronics has
been demonstrated. We derive the permeation rate by amount ofoxidative degradation in thin calcium by resistance measurements. As aresult, this method can achieve accurate determination of thepermeation rate with high sensitivity, also has application to various
fabrication technique of passivation layers for OLED stability.
OLEDp - 14

Large-Area White Polymer Light-Emitting Diode
Made by Selective Spin Coating
S. H. Jeong, S. K. Kwon, Y. K. Lee, T. J. Park,
W. S. Jeon, J. H. Kwon, J. Jang
Kyung Hee Univ., Korea

We developed a selective coating technique by spin coating for white
polymer light-emitting diode (WPLED). This is a new polymer patterningtechnology for large area lighting application of WPLED. Teflon can beused to make a hydrophobic surface for the selective polymer coating
without increasing contact resistance significantly.
OLEDp - 15

Admittance Spectroscopy of the Electric Propertiesof 1,4-bis[N-(1-naphthyl) -N’-phenylamino]-4,4’
Diamine Doped with Tungsten Oxide
M. T. Hsieh, C. C. Chang, C. A. Hu, Y. T. Huang,
S. L. Yang, J. F. Chen, S. W. Hwang, C. H. Chen
Nat. Chiao Tung Univ., Taiwan

We report an efficient p-type doping of NPB layer using WO3 as a pdopant.. We find that increasing the WO3 volume percentage canreduce the activation energy of the NPB layer and increase the holeconcentration in NPB layer. As a result, the hole-injection can be
improved via tunneling through a narrow depletion region due to theincreasing band bending which corresponds to the difference of Fermi
level position between the ITO and the NPB layer.

155

Thursday

December 7

OLEDp - 16

The Study of Power Consumption of Individual
Organic Semiconductor Device: From Panel Point ofView
H. Yang, T. Y. Su
Nat. Taipei Univ. of Tech., Taiwan

The quantification of total power consumption of the organic lightemitting diode (OLED) from display panel point of view was investigatedby macro impedance model. The OLED device in our macro impedancemodel is regarded as a net power consuming device in which theelectrical power will dissipate through its internal resistance as well ascomplex power during panel operation. Our preliminary results revealed
that a relatively large phase shift may cause ineffective power
consumption from panel point of view.
OLEDp - 17

Impedance Spectroscopy and Equivalent Circuits ofPolymer Light-Emitting Diodes
T. Okachi, H. Azuma, T. Nagase, T. Kobayashi, H. Naito
Osaka Pref. Univ., Japan

Impedance spectroscopy (IS) of poly(9,9-dioctylfluorene) (F8) polymer
light-emitting diodes (PLEDs) with anode buffer layers has been studied
to determine their equivalent circuits. The equivalent circuits of the
PLEDs below and above the threshold voltage for electroluminescence(EL) and their physical interpretation are shown. A significant differencein equivalent circuits is observed between below and above thethreshold for EL. Above EL threshold, two R-L series branches due tocharge carrier recombination appear in the equivalent circuit.
OLEDp - 18

Analysis of the Hole-Mobility in PLEDs Using
Transient-Electroluminescence Method
J. H. Youn, Y. I. Lee, Y. K. Lee*, T. J. Park*, H. T. Moon,
J. Jang*
KAIST, Korea*
Kyung Hee Univ., Korea

We have studied the behavior of hole mobility of the PLEDs having ahole transport layer such as PEDOT:PSS. Using the transientelectroluminescence technique, we measured the mobility of theemitting layer in the PLED which is at an order of 10-5cm2/Vs at room
temperature. The mobility increases significantly with PEDOT:PSS, but
has no dependence of the thickness of LiF in the range of 1 to 3 nm.

156

Thursday
OLEDp - 19

December 7
Liquid Light-Emitting Display Based on
Electrochemiluminescence with InterdigitatedMicroelectrodes
S. Enomoto, Y. Mizuno, N. Saito, Y. Kizaki, I. Amemiya,
S. Uchikoga
Toshiba, Japan

We proposed a novel liquid light-emitting display (LLED) consisting ofan electrochemical cell with interdigitated microelectrodes and liquid
electrolyte containing light-emitting material. The emitting phenomenon
is electrochemiluminescence (ECL) based on electro-chemical
reaction. The cell with fast response time of 3 ms has been successfully
operated by AC voltage application. LLED could avoid image-sticking
problem of OLED caused by DC voltage application and solid-statecomponent.
OLEDp - 20L

The Synthesis New Dendrimer and High Quantum
Efficiency Iridium Complex Properties of Solution
Processable Phosphorescent
H.-W. Hong, I.-R. Laskar, T.-M. Chen
Nat. Chiao Tung Univ., Taiwan

We demonstrate that the Ir complexes used as dopants in organic
electrophosphorescent diodes exhibit high PL quantum efficiency (ηPL )in the solid-state. We have pursued the development of highly
luminescent solution-processible electrophosphorescent dendrimers.
We observed that the PLQY of the (G1-bt3Ir) compound dendrimer wasapproximately 1.5 times higher than the pristine complex Ir(bt)3 insolution. The external quantum efficiency of OLEDs using the film
containing a mixture of the first-generation dendrimer and an electrontransporting material was as high as 4.14%.
OLEDp - 21L

Low Voltage and Long Lifetime Organic EL Devices
with New Electron Transport Materials
T. Koike, Y. Ono, M. Uchida
Chisso PetroChem., Japan

In this paper, we report new highly effective Electron Transport
Materials (ETMs) for Organic Light Emitting Diode (OLED). The ETMs
showed good performances, such as high efficiency, low operating
voltage, and long lifetime in blue OLEDs.

157

Thursday

December 7

OLEDp - 22L

Multilayer White Organic Light-Emitting Diode with a
Alq3 Doped Blue Layer
S. I. Park*, Y. G. Lee*’**, S. Lee*, K. H. Koh**
Ajou Univ., Korea**
Samsung Advanced Inst. of Tech., Korea

We fabricated white organic light-emitting devices which had composite
emission layers based on blue emitting MADN and DSA-Ph, greenemitting Alq3, and red-emitting DCJTB. The co-doping of MADN layer
with DSA-Ph and Alq3 resulted in substantial improvement of device
performance. The maximum luminance and efficiency of 29,420 cd/m2
and 5.72 cd/A were achieved at 11 and 7 V. Moreover, stable whiteemission with the CIExy color coordinates of (0.357, 0.350) was
observed for driving voltages between 6 and 11 V.
OLEDp - 23L

Influence of Doping Concentration in the Emissive
Layer of Organic Light Emitting Diodes
Y. W. Park*, Y. M. Kim*’**, J. H. Choi*, B. K. Ju**Korea Univ., Korea**Korea Inst. of Sci. Tech., Korea

Currently, in the area of organic light emitting diodes, the way how to
improving electroluminescence efficiency and other characteristics areinvestigated in world widely. In this paper, we’ve studied the influence of
doping concentration in the emissive layer. With applying variations of
doping concentration, we’ve added one more dopant. The emission
layer was commonly used Alq3 and two dopants were C-545T and
DMQA. Compared with single dopant based device, the EL
characteristics were improved when the two dopants usedsimultaneously.
OLEDp - 24L

Electric Field Distribution in Polyfluorene BasedLight-emitting Diodes upon Insertion of Interfacial
Layer
R. Jin, J. C. deMello, J. Huang, D. D. C. Bradley
Imperial College London, UK

We present electroabsorption (EA) technique measurements of internal
electric fields in poly(9,9’-dioctylfluorene)(PFO)-based multilayer
polymer light emitting diodes (PLEDs) with and without an interfacial
layer between the hole conducting layer and the emissive layer. There isa strong internal electric field screening effect for the interfacial
material-based PLEDs, which can explain the significant improvementof the device efficiency caused by adding a 10nm layer of poly(9,9dioctyl-fluorene-co-N-(4-butylphenyl)-diphenylamine) (TFB) between apoly(styrene sulphonate)-doped poly(3,4-ethylene dioxythiophene)(PEDOT:PSS) layer and a PFO emissive layer.

158

Thursday

December 7

OLEDp - 25L

Preparation of Nickel-Doped Indium Tin Oxide Anodefor Organic Light-Emitting Diode Using a Single
Target Sputter
C.-M. Hsu, H.-H. LeeSouthern Taiwan Univ. of Tech., Taiwan

A nickel (Ni)-doped indium tin oxide (ITO) anode was prepared using a
Ni-ITO single-target sputtering for organic light-emitting diodes(OLEDs). Devices with 3% and 5 wt% Ni-ITO anodes show a thresholdvoltage drop of 1.52 and 0.72 V, respectively, whereas the turn-on
voltage was reduced by 4 V and 3.8 V. The successful development in
preparing Ni-doped ITO films by a single target instead of a Ni-ITO cosputter system allows this approach to be adopted for OLED
manufacturing.
OLEDp - 26L

Study of Moisture Permeation Properties of OLED
Package and Device Lifetime
S. K. Ramadas, S. J. Chua, L. Ke, S. Z. Ma, M. Auch
Inst. of Materials Res. & Eng., Singapore

A highly sensitive water vapor permeation measurement technique fororganic light emitting display applications is demonstrated. Calcium isused as a sensor. The amount of the calcium degraded as hydroxide is
detected by measuring the change in electrical properties of calcium.
The sensitivity of this system for the measurement of water vapor
transmission rates is better than 10-6g/m2/day. Water vapor transport
rates and diffusion coefficients of glass based packaged OLED
structures are quantified and related to the OLED operating lifetimes.
14:00 - 17:00

Ohmi 5-7

Poster AMD/OLEDp: AM-OLED
AMD/OLEDp - 1

2-in. QQCIF Top-Emission AMOLED Drived by Low
Temperature Poly Silicon TFT on Flexible Metal Foil
with BCB Planarization
D. J. Park, Y. H. Kim, M. H. Lee, J. H. Moon,
C. H. Chung, Y. H. SongETRI, Korea

We have developed a 2 inch QQCIF LTPS-TFT AMOLED display with a
top emission structure on a 50-µm-thick metal foil with BCB
planarization. The p-channel poly-Si TFT on flexible metal foil exhibitedthe field-effect mobility of 54cm2/Vs, the on/off current ratio of 106, thethreshold voltage of -3V, and the subthreshold slope of 0.8V/dec.
Finally, a images from prototype monochrome AMOLED displays are
successfully presented, with 64 × 88 pixels and 56-ppi resolution.

159

Thursday
AMD/OLEDp - 2

December 7
A Novel Compensation Pixel Circuit of AMOLED
Display for Stable OLED Current
M. H. Kang, J. W. Choi, J. H. Koo, Y. S. Kim, K. W. Ahn,
J. H. Hur, S. W. Lee, J. Jang
Kyung Hee Univ., Korea

We propose a new pixel circuit for a-Si:H AM-OLED display. The
voltage-programming method is used in the pixel circuit forcompensating the threshold voltage shifts of a-Si:H TFTs. One of theswitching TFTs takes a role of preventing the peak current flowing to
OLED during reset and compensation periods. We have designed an
Emission Control Pulse (ECP) generator based on gate signals tocontrol the switching TFT. The operation and stability of proposed pixel
circuit are proved by SPICE simulation.
AMD/OLEDp - 3

A Voltage Driver IC with Automatic LuminanceControl for 256-Level Full Color Active-Matrix OLED
Displays
J. H. Lee, D. C. Park, C. H. Park, S. H. Kim, H. K. Yun,
G. N. Kim, I. S. Kang, B. N. Kim
Samsung Elect., Korea

An AMOLED driver IC using voltage driving scheme, one of driving
methods to drive AMOLED, is developed. The developed driver IC can
automatically control the luminance and has 256 gray levels for LTPSQVGA full-color AMOLED Displays. To reduce the chip size, thedeveloped driver IC also uses one source amplifier for RGB. As a result,it has 240 source outputs and the separated serial gamma circuits.
AMD/OLEDp - 4

New Pixel Circuit Employing Fast VTH Detection
Scheme for LTPS AMOLED
H.-S. Shin, W.-K. Lee, S.-G. Park, S.-H. Choi, M.-K. Han
Seoul Nat. Univ., Korea

We propose a novel pixel design employing fast threshold voltage
detection scheme for active matrix organic light emitting diode(AMOLED) displays using low temperature polycrystalline silicon thinfilm transistors (LTPS-TFTs). The proposed pixel circuit, which consistsof 5 p-type TFTs and 2 capacitors, has a fast threshold voltage
detection scheme using the clock signal. The simulation results showthat the proposed pixel circuit exhibits a scan time less than 7 micron
second and successfully compensates Vth variation of poly-Si TFT.

160

Thursday

December 7

AMD/OLEDp - 5

Capacitive Compensation to Suppress Sample-andHold Non-Idealities in Switched-Current AMOLED
Pixel Circuits
X. Guo, S. R. P. Silva
Univ. of Surrey, UK

A simple and effective capacitive compensation method is presented tosuppress the sampling and hold (S/H) non-idealities in switched-current(S-I) AMOLED pixel circuits for inverting structure top-emitting OLEDs,
and thus greatly improve the output linearity of the circuit. The method
can also be used to design the p-TFT S-I pixel circuit for normal
structure top-emission OLEDs, and some other configurations of S-I
AMOLED pixel circuits, or even voltage-mode driven pixel circuits.
AMD/OLEDp - 6

A Novel Threshold Voltage Compensation Pixel
Circuit with High Immunity to the Supply Voltage
Drop for AMOLED Displays
H.-Y. Lu, P.-T. Liu, T.-C. Chang*, S. Chi
Nat. Chiao Tung Univ., Taiwan*Nat. Sun Yat-Sen Univ., Taiwan

A new pixel circuit employing LTPS TFT for AMOLED is proposed. The
proposed one can eliminate both the threshold voltage variation of thedriving TFT and the supply voltage drop. The simulation results indicatethat the proposed circuit significantly improves the non-uniformity ofoutput current by the new compensation operation.
AMD/OLEDp - 7

A New Drive Method for Large Organic Light-Emitting
Diode Displays
J. C. Rutherford, C. A. Wedding, D. K. Wedding*
Imaging Syss. Tech., USA*Univ. of Toledo, USA

This new drive method eliminates obstacles that affect the performanceof very large organic light-emitting diode displays on plastic substrates.
Increased component tolerances reduce problems caused bydimensional instability of plastic substrates. The enhanced performanceenabled by using this drive method is not matched by other active
matrix drive methods.

161

AMD/OLEDp - 8L

Polarity Inversion Driving Method to Reduce theThreshold Voltage Shift in a-Si:H TFT AMOLED
H.-S. Park, J.-H. Lee, J.-H. Jeon*, M.-K. Han
Seoul Nat. Univ., Korea*Hankuk Aviation Univ., Korea

We have proposed a new driving method to improve the current stabilityof a-Si:H TFT for AMOLED. The proposed scheme performs thenegative bias annealing on a-Si:H TFTs during a certain period of aframe time. The amplitude of negative bias to cure the degradation of aSi:H TFTs is determined by the previously applied positive voltage
which displays the original image. Our simulation result shows that it
can suppress the degradation of a-Si:H TFT and provide the goodscreen uniformity.

BANQUET
Wednesday, December 6
19:10–21:10
Prince Hall (3F)
Otsu Prince HotelSee page 9 for details
162

Thursday

December 7

Workshop on 3D/Hyper-Realistic
Displays and Systems
Thursday, December 7
14:00 - 14:05

Ohmi 2

Opening
Opening Remarks
14:00
I. Yuyama, Utsunomiya Univ., Japan
9:00 - 12:00

Ohmi 5-7

Poster 3Dp: 3D and Hyper Realistic Display
3Dp - 1

Adjustment of Depth of Field of Binocular Cameras
to Reproducible Depth with Stereoscopic LED
Display
M. Nitta, H. Yamamoto, Y. Hayasaki, N. Nishida
Univ. of Tokushima, Japan

We have developed a stereoscopic display system with adjustment of
depth of field of binocular cameras. It is necessary to adjust thebinocular disparity that three-dimensional image contains to theallowable disparity range of the stereoscopic display. In this paper, weanalyze the disparity distribution and the boundary of stereoscopic
vision. Furthermore, we propose a method of adjustment of depth offield with binocular cameras in order to extract the objects in theallowable disparity range.
3Dp - 2

Limits of Disparity Angle for Perception of Depth
Reproduced by a Stereoscopic Display by Use of a
Large LED Panel
K. Uchida, H. Yamamoto, Y. Hayasaki, N. Nishida
Univ. of Tokushima, JapanThe viewing conditions of stereoscopic LED displays in the open air arechangeable in brightness according to the weather and the surrounding
lights. This paper reports the limits of disparity angle for perception of
depth that is represented by a large stereoscopic LED display.
Experiments about depth-perceptions have been conducted with andwithout lighting up the experimental room. Experimental results
revealed that the limit of disparity angle depends on the lighting
conditions.

163

Thursday
3Dp - 3

December 7
Large Stereoscopic Display with a Parallax Barrier by
Use of an Aperture Grille
H. Nishimura, T. Abe, H. Yamamoto, Y. Hayasaki,
N. Nishida
Univ. of Tokushima, Japan

We propose a large parallax barrier by use of aperture grille. Main
advantages of using aperture grille include no reflection and noabsorption in apertures. We have measured viewing areas around themain lobe and around side lobes. Experimental results show use ofaperture grille in-creases contrast and enlarge the viewing areas
compared to the conventional parallax barrier by use of a painted
acrylic board. Furthermore, we have realized a large stereoscopic
display by use of 140-inch LED panel.
3Dp - 4

Projection-Type Depth Fused 3-D (DFD) Display
M. Date, H. Takada, S. Suyama, K. Tanaka,
K. Nakazawa
NTT, Japan

A large-area see-through 3D display using a depth fused 3D (DFD)visual illusion is presented. The display consists of a stack of two
transparent screens with projection from both the rear and front
directions. Utilizing angular and polarization dependence of thescattering efficiency of the screens, cross talk between the images on
the front and rear screens is suppressed. The display also provides a
see-through effect, which can give a viewer the sense that the image is
floating.
3Dp - 5360 Degree Viewing Stereoscopic 3D Display System
K. Sakamoto, T. Nishida, K. Uchida
Shimane Univ., JapanWe describe a 360 degree viewing display that can be viewed from any
direction. The screen rotates at a uniform speed. Then an observer canview a monitor screen at any position surrounding the round table. But
the solid of revolution is formed when an image screen is rotated.
Hence the angle of view is controlled by slit in order that a screen faces
an observer and he can view only 2D images on the screen without 3D
solid images.
3Dp - 6L

Virtual Display: Mirror Image for Extension of Display
Area
A. Tanaka, K. Sakamoto
Shimane Univ., JapanA liquid crystal display recently comes into common use. It is possible
for this display unit to provide the same size of displaying area as theimage screen on the panel. The conventional display can show only one
screen, but it is impossible to enlarge the size of a screen. In this report,
we present an enlarging method of display area. Our extension method
enables the observers to show the virtual image plane and to enlarge ascreen area twice.
164

Thursday
3Dp - 7L

December 7
Field-lens 3D Display Using Linear and Circular
Polarized Illuminations
H. Morimoto, K. Sakamoto
Shimane Univ., Japan

This report describes the field-lens display for viewing the 2-views
stereoscopic images. We have developed field-lens 3D displays using
dual LCD panels for displaying full-screen left and right images. Our
proposed method can ever modulate horizontally and vertically oriented
linear polarized illuminations. However, each LCD panel can’t display aleft or right image directly. To solve this problem, this report proposes
new modulation method using both linear and circular polarizations.
3Dp - 8L

A Turn-Type High-Resolution 3-D Display Using LEDs
T. Yamaguchi, A. Ito, Y. Sakamoto, I. Fukuda
Kanazawa Inst. of Tech., JapanWe developed a turn type depth sampling display using a vertical arrayof light emitting diodes (LEDs). By moving of LED array, twodimensional images are perceived by the effect of after image. Byarrangement of 16 arrays, 3-D images can be display in real space. We
successfully combined our previously developed display prototypes witha printer head LED array to develop a display unit capable of displaying
an high-resolution image of 640 × 750 × 16 boxels.
14:00 - 15:20

Ohmi 2

3D1: 3D Display (1)Chair:
Co-Chair:
3D1 - 1:
14:05

J.-Y. Son, Hanyang Univ., Korea
T. Mishina, NICT, Japan
Invited Development of Multi-Focus 3D Display
Systems
S.-K. Kim
KIST, Korea

Multi-focus 3D display systems are developed and possibility aboutsatisfaction of eye accommodation is tested. The multi-focus means theability of monocular depth cue to various depth levels. By achieving
multi-focus function, we developed a 3D display system for one eye,which can satisfy accommodation to displayed virtual objects within
defined depth. The accommodation of one eye is tested and a proof ofthe satisfaction of the accommodation is given as results by using the
proposed 3D display systems.

165

Thursday
3D1 - 2
14:30

December 7
Simulation of a Novel High Brightness Technology of
Stereoscopic Display
C.-Y. Chen, Y.-M. Chen*, C.-C. Lin*, M.-C. Chang,
H.-T. Chou
Nat. Yunlin Univ. of S&T, Taiwan*Chunghwa Picture Tube, Taiwan

In this paper, we newly propose a light-reuse method for increasing thebrightness of stereoscopic display. This method can effectively resolve
the problem of traditional parallax barrier method that will produce much
reflected light and cause the deficiency of the luminance. The idea is toevaporate a layer of metal thin film on the back of the grating of parallax
barrier which can guide the reflected light to transparent region, and thereflected light can be reused again.
3D1 - 3
14:50

A 3D/2D Convertible Display with Pinhole Array on a
LC Panel
H. Choi, Y. Kim, S.-W. Cho, B. Lee
Seoul Nat. Univ., Korea

A 3D/2D convertible integral imaging system using a pinhole array on
an LC panel is proposed. By generating and eliminating the pinhole
array on the LC panel electrically, the system can be operated on the
3D and 2D modes. Some experimental results are also demonstrated toprove the proposed method.
3D1 - 5L
15:10

Autostereoscopic Multi View 3D System Using
Square Subpixel
J. U. Park, B. J. Lee, H. K. Hong, H. H. ShinLG.Philips, Korea

Subpixel structure of 2D display is an important factor in designing
optical configuration of viewing zone. Relation between view numberand 3D image quality is estimated for LCD of RGBW quad subpixel
structure. As view number increases, distances between subpixel ineach zone tend to be uniform. Autostereoscopic multiview 3D system isdeveloped using slanted barrier and evaluated.
----- Break -----

166

Thursday

December 7

15:40 -16:55

Ohmi 2

3D2: Holographic and Advanced Displays
Chair:
Co-Chair:
3D2 - 1:
15:40

I. Yuyama, Utsunomiya Univ., JapanS. Yano, NHK, Japan
Invited A Broadcasting Technique for Holographic 3D
TV Using Internet System
K. Takano, K. Sato*
Tokyo Metropolitan College of Ind. Tech., Japan*
Shonan Inst. of Tech., Japan

In this paper, a transmitting process of a sequence of holograms
describing 3D moving objects over the communicating network system
is presented. A sequence of holograms involves holographic
information of 3D moving objects recorded as fringe patterns. In thisprocess, holographic information recorded in the holograms istransformed into in a bit stream data, and then it is transmitted over theinternet system.
3D2 - 2
16:05

Expansion of Reconstruction Image ofElectroholography Using LCD Panels in Parallel
A. Shiraki*, T. Ito*’**, N. Masuda*, T. Shimobaba****
Chiba Univ., Japan**JST, Japan***Yamagata Univ., Japan

In recent years, research of electroholography is studied in various
fields. However, since there is not a sufficient device for displaying
computer generated hologram, generally it is not put to practical use
yet. Then, we put several liquid crystal display panels in order and madea large display area. Consequently, we were able to obtain the larger
reconstruction image than the case that only one liquid crystal display
panel was used.
3D2 - 3
16:25

Optic Waveguide Flexi Panel Electronic Display
D. HuangFirstwave Advanced Mechanical Elect. Display, Australia

A visual display formed by picture elements, which are optically coupled
to optical pathways through which light is supplied from light sources
controlled by control hardware, transmit light to the optical pathways byscanning light to different optical pathways. The light sources and thepathways are mutually oriented. Light sources can be scanned into
different optical pathways to form images. Light sources on a rotating
mounting rotate past static pathways that transmit coupled light to the
waveguide screen.

167

Thu./Fri.

December 7/8

3D2 - 4L
16:45

Real Time Rendering for a Full Parallax 3D Display
Using High-Density Directional Images
M. Tsuboi, M. Fujioka*, Y. Takaki*, T. Horikoshi
NTT DoCoMo, Japan*Tokyo Univ. of A&T, Japan

We realize the real time interaction on the 3D display using high-density
directional images. By tracking the face of the observer and changing
the 3D image dynamically according to the position of the observer, afull parallax 3D display is achieved. In addition, the speed to generate
the 3D image is 15 [fps]. Consequently, natural 3D interaction turns toreality and real time interaction with 3D image is achieved.

Author Interviews
18:40 – 19:40

Friday, December 8
9:00 - 10:30

Ohmi 1

3D3: Hyper Realistic Display and Human Factor
Chair:
Co-Chair:
3D3 - 1:
9:00

S.-K. Kim, KIST, Korea
M. Hashimoto, NTT Data, Japan
Invited The Effects of the Additional Static Stimulus
in Perceiving Visually Induced Self-Motion
S. Nakamura
Nihon Fukushi Univ., Japan

A larger moving stimulus can induce illusory self-motion perception tothe opposite direction (vection). Psychophysical experiments revealed
that an additional static foreground can facilitate vection, while it inhibits
vection when the same stimulus is presented as a back-ground.
Furthermore, the vection facilitation by the foreground is dominated bycentral, whereas the vection inhibition caused by the background ismore salient with peripheral stimulation. These results can be applied
for a visual display which can demonstrate self-motion perception more
effectively.
3D3 - 2
9:25

Analysis on the Effect of Diffraction and Human
Factors on the Integral Imaging System
J. Kim, Y. Kim, S.-W. Cho, H. Kim, B. Lee
Seoul Nat. Univ., Korea

We analyze the effect of the diffraction of the lens array and the lens of
the eye when the observer is watching three-dimensional image
constructed by integral imaging. We simulate the retinal image of theobserver through the wave optical calculation for the analysis. The
optimum size for the lens array is investigated and the integration of theimage in the sense of wave optics is tested.

168

Friday
3D3 - 3:
9:45

December 8
Invited Multi-Dimensional Multipoint Measurement
System to Construct Large-Scale Real-World
Database
T. Fujii, K. Mori, K. Takeda, K. Mase, M. Tanimoto,Y. Suenaga
Nagoya Univ., JapanWe developed a novel multipoint measurement system capable ofacquiring video and sound at more than 100 points in a “synchronized”
manner. In this paper, we first describe the specification of the systemand then report data acquisition results that include test sequences for
MPEG (Moving Picture Experts Group) Multiview Video Coding, traffic
surveillance, and multiview video for educational materials. We areplanning to collect a large volume of real-world video and sound andrelease them to the public.
3D3 - 4
10:10

Development of Hyper-Realistic Peripheral-VisualFieald Image Processing Using Distortion Perception
Limit of Peripheral Vision
T. Sasaki, A. Hotta, H. Okumura
Toshiba, Japan

We propose a method to centralize image information for improving
hyper-reality with wide visual field. This method produces distortion on
images. We evaluated the profile of distortion perception limit atperipheral vision. The distortion perception was sensitive to less than
30 degrees of eccentricity. It became dull rapidly at over 40 degrees,and distortion was largely unperceived at 50 degrees. Simple
enlargement of HD image on dome screen increases “hyper-reality”.
Transformation using this profile enhanced 0.6 points in subjective
evaluation.
----- Break -----

169

Friday

December 8

10:30 - 11:40

Ohmi 1

3D4: 3D Display (2)Chair:
Co-Chair:T. Fujii, Nagoya Univ., Japan
T. Mishina, NICT, Japan

3D4 - 1
10:30

Three Dimensional Imaging Systems without
Viewing Zone Forming Optical Plates
J.-Y. Son, V. V. Saveljev, K.-T. Kim*, Y.-J. Choi,
K.-H. Cha**
Hanyang Univ., Korea*
Hannam Univ., Korea**Samsung Elect., Korea

A multiview 3-D image device based on LED array is introduced. This
device is free from viewing zone forming optics in current multiview 3
dimensional imaging systems. This device has the same structure as
current LCD panel but an LED light source array is used instead of theback light panel. 3 dimensional images displayed on this device provide
a good depth sense, though it reveals many problems to be solved infuture.
3D4 - 2
10:50

3D Images with Enhanced DOF Produced by 128Directional Display
Y. Takaki, K. Kikuta
Tokyo Univ. of A&T, Japan

A high-density directional display has been developed to solve theaccommodation-vergence conflict. The accommodation responses tothe 128-directional display show that the high-density directional display
technique has the effect of enhancing the depth of focus (DOF) of aneye imaging system. When 3D images are displayed within theenhanced DOF, the accommodation function works appropriately. We
also report the development of a new 128-directional display having
SVGA resolution.
3D4 - 3
11:10

A Novel 3D Double Screens Display
C. Lai, C. Chen, H. ShiehNat. Chiao Tung Univ., Taiwan

A novel 3D double screens display system including a planar mirror anda micro-optical structure is proposed to yield dual full-sized 3D images.
The lenticular-lenses-based micro-optical structure can generate 3D
function and double screens function by rotating color filter’s pixel layout
with respect to the lenticular-lenses’ positioning direction. Viewers canenjoy two image screens simultaneously with a planar mirror aligned.
The proposed system has high potential on transforming the ordinary
flat panel displays to 3D double screens displays.

170Friday

December 8

3D4 - 4L
11:30

Moire Reduction for Integral Videography
T. Koike*’**, M. Oikawa**, K. Utsugi**
Univ. of Tokyo, Japan**
Hitachi, Japan*We developed an integral videography display with an optimized color
filter layout. The integral videography display consists of a highresolution LCD and a microlens array. There are two kinds of moire
visible on the display: a color moire caused by the color filter layout andan intensity moire caused by a black matrix on the LCD. To reduce themoires, we have changed the layout of the color filter on the LCD anddefocused autostereoscopic images through the microlens array.

Author Interviews
17:00 – 18:00

IDW ’07
The 14th International Display Workshops
December 5-7, 2007
Sapporo, Japan

Outstanding Poster Paper
Awards Ceremony
Friday, December 8
See page 9 for details
171

Wednesday

December 6

Workshop on
Applied Vision and Human Factors
Wednesday, December 6
13:20 - 16:20

Ohmi 5-7

Poster VHFp: Human Factors and Image Quality
VHFp - 1

Skin Color Reproduction for Mobile Display
H. H. Cho, J. S. Kim, J. F. Zhan, M. H. Lee
Samsung Elect., Korea

In this paper, preferred skin color reproduction for improving the image
quality is designed. The proposed method consists of two blocks: color
space conversion and skin transformation. The color discontinuity
reduction algorithm is described to remove false contours caused byconventional skin color transformation methods. The visual test is
performed to compare the processed image and original one. The
proposed method has been verified by using FPGA and 2.4-inch LCD
module (QVGA, 260k colors).
VHFp - 2

Accurate Color Reproduction Method for Displays
Y. Kawagoe, Y. Shimodaira
Shizuoka Univ., Japan

There are color reproduction problems those are the color-tracking
phenomenon that result in the shifts of chromaticity in the low
luminance regions and the imperfectness of the additive color mixture in
the display devices. In this study, we propose a real-time color
reproduction method suppressing the color-tracking and correcting theimperfectness of the additive color mixture. When the method works ina display, it displays images with accurate color.
VHFp - 3

Visual Detection and Recognition of Objects under
Low-Illuminance of Different Color Temperature
K. Inagaki, G. Ohashi, Y. Shimodaira
Shizuoka Univ., Japan

Visual performance against changes of luminance, contrast and color
temperature of objects was evaluated to reduce traffic accidents atnighttime driving. The best performance is obtained at white point of
6500K under the dark environment. There are large influences causedby contrast in all luminance levels, although no influence is caused bycolor temperature in the brighter one. Moreover, novel method todetermine optimal luminance in dark environment is proposed byrelations of luminance to ratios of detection and recognition.

172

Wednesday
VHFp - 4

December 6
Preferred Color Conversion Applied to Display Basedon Hardware Design
C.-W. Ho, T.-L. Wu, C.-H. Cheng, C.-Y. Ke, Y.-W. Huang
ITRI, Taiwan

The proposed method is to do color transform pixel by pixel firstly andthen apply color gamut mapping and preferred color adjustment
simultaneously or respectively in hue and chroma. The architecture has
worked out with FPGA. It achieves real-time color processing by
pipeline structure and has the I2C interface to connect hardware andsoftware. The overall processing performance can reach to 100.5MHZ.
The visual quality rate of color reproduction will be improved more than
20% by applying this method.
VHFp - 5

Adaptive Color Image Enhancement Applied to
Display Based on Hardware Design
C.-Y. Ke, T.-L. Wu, C.-H. Cheng, C.-W. Ho, Y.-W. Huang
ITRI, Taiwan

This paper proposes a kind of dynamic digital color adjustment that it
can automatically calculate out the features of continuous frames andjudge what kinds of these continuous frames should belong in and thendo different strategies of color adjustment for these. It makes theseframes perceptually optimal and high dynamic range for human vision.
The proposed architecture achieves real-time color processing by
FPGA. The visual quality rate of color reproduction will be improved
more than 20% by this method.
VHFp - 6

A New Method for the Viewing Angle Image Color
Shift Evaluation
C.-Y. Liu, L.-H. Chang
Chung-Hwa Picture Tubes, Taiwan

The new method of viewing angle image quality evaluation for large
screen TFT-LCD TV was proposed. The off-axis color shift has become
more noticeable especially for the vertical alignment TFT-LCD. Due tothe off-axis color shift level is highly related to the oblique gamma
distortion. We develop OGD (oblique gamma difference) method toqualify the off-axis color shift of the TFT-LCD. It can truly evaluate theoff-axis color shift level by using OGD method.

173

Wednesday
VHFp - 7

December 6
Visual Evaluation of New Pixel Arrangements for
Matrix Displays
A. Tsunoya, M. Kimura
Ryukoku Univ., Japan

New pixel arrangements have been visually evaluated for matrix
displays. Visual resolution limits and natural picture quality of theconventional and new pixel arrangements are evaluated using
physiological experiment. It is found that the visual resolution limit forthe stripe arrangement is small. On the other hand, the visual resolution
limits for the PenTile RGBW L6W and RGBCMY arrangements arelarge. Natural picture quality for the PenTile RGBW L6W is mostsuperior.
VHFp - 8

Measurements of Time-Dependent Mura in LCD
Manufacture
P.-Y. Tang, K.-H. Yang, S.-L. Ho, C.-H. Kuo*, Z.-J. Jhang*,
K.-C. Chang*
HannStar Display, Taiwan*Tainwan TFT LCD Assn., Taiwan

In this paper, we used novel methods to measure and analyze thephenomenon of COG (chip-on-glass) mura aging. Results revealed that
the JND profile of muras decayed day by day. In addition, a subjective
experiment was conducted to find the human eyes’ contrast threshold of
curtain mura. Finally, our methods can be used to reduce testing time tovalidate the robustness of the display, and establish accelerated
measuring techniques to find the corrosion failure.
VHFp - 9

An Objective Sharpness Evaluation Method for EdgeEnhanced Digital Halftone Images Using Cooperative
Human Vision Model
T. Matsui, H. Shioda
Gunma Univ., JapanA new objective sharpness evaluation method independent of tonereproducing methods was already developed using a cooperative
human vision model. This research focuses on clarifying that the
proposed method can also be successfully applied to sharpness
evaluation for edge-enhanced images. Consequently, the correlation
coefficients between the objective and subjective evaluation values
were over 0.97 irrespective of tone-reproducing methods. This result
suggests that the proposed method is also effective in reproducing
human subjective judgments on sharpness for edge-enhanced images.

174

Wednesday
VHFp - 10

December 6
New Metrics Based on Visual Perception for
Evaluating Image Quality
S. Ueki, T. Taguchi, K. Nakamura, Y. Itoh, K. Okamoto
Sharp, Japan

We propose a new evaluation metrics for any surrounding
environments. We confirm the evaluation metrics can be applied to theimage evaluation under large range of light conditions. In our subjective
experiments, the metrics strongly related to the image quality under theoutdoor condition (20,000lux) as well as in the room light (200lux). We
could compare “Brightness” and “Brightness Sense’s Contrast Ratio” of
the images under some different light conditions by using the metrics.
VHFp - 11

Detection of Uneven Area Defects on LCD Display by
Using Variable-sized Directional Filter
T. Hatada, F. Saitoh
Gifu Univ., Japan

Uneven areas are typical defect of LCD display. For now, the experts
inspect unevenness on LCD display by visual in manufacturing line
because of its location and sizes are unpredictable in advance. This
paper proposes a method of image processing. The special filter isused in this method for changing its direction and length to improve inthe detectability of the contour of a defect. The experimental results
showed that the major parts of contours of defects are detected
effectively.
VHFp - 12

Composition of Multiple Exposed Images Based on
Weights Setting by Genetic Algorithm
F. Saitoh, Y. Narumiya
Gifu Univ., Japan

This paper proposes a method to generate a single image with superior
gradations from multiple exposed images. The genetic algorithm isapplied for setting weights of all exposed images. In the algorithm, anindividual chromosome is represented by the array of real numbers forweights. The individual fitness is obtained from the entropy for graylevels in an output image. The experimental results showed that themethod could generate images with smooth gradation and good
contrast from multiple exposed images.
VHFp - 13

Contrast Improvement for Displayed Color Image
Based on Color Difference
H. Hayashi, F. Saitoh
Gifu Univ., Japan

This paper proposes a method to generate a color displayed image withsuperior contrast from an image with low contrast by software
processing. In this method, the Look-up-table(LUT) is generated basedon the color difference histogram. And LUT is applied for expanding
brightness of low contrast color images. The experimental results
showed that the method could generate a displayed color image thathas natural and higher contrast visually than the conventional methods.
175

Wednesday
VHFp - 14

December 6
Image Contrast Enhancement Based on Differential
Gray Level of Gradient Pixels Pair
F. Saitoh
Gifu Univ., Japan

This paper proposes a method for image contrast by using distributionsof gray levels and spatial features. For image contrast enhancement,
expanding the differences of the gray levels in planes that locate on
both sides of contours is supposed to be effective. The differences
between the gray levels are treated as the weights. The experimental
results showed that the proposed method could generate the good
contrast images with less noises in comparison with the conventional
methods.
VHFp - 15

Magnification Method for Displayed Image Based on
Gradient Direction in Wide Pixels Area
K. Muto, F. Saitoh
Gifu Univ., JapanThe magnification of an image is general purposed method for image
processing. The typical conventional methods for image magnification
are the bi-liner-interpolation and the cubic-convolution. These methods
often generate a blurred and unclear image. We proposed a new
magnification method by using the gradient information by pixel. And
this paper proposes an improved magnification method by using thegauss function and the gradient information in wide pixels area. The
experimental results show that the clear magnified images weregenerated.
VHFp - 16

Detection of Abnormal Conditions Based on
Analysis of Cyclic Movement in Displayed Scene
ImagesY. Terada, F. Saitoh
Gifu Univ., Japan

This paper proposes a general-purposed method for automatic
detection of abnormal conditions in displayed scene images using theperiodicity of motion-images. FFT is a typical method for detecting wave
cycle, but it isn’t suited for speedy detection of the disorder. The
proposed method can be expected to detect an abnormal condition in
real-time. The experimental results showed that the correct detectionsof periodicity and immediate detections of abnormal conditions wererealized in the general situations.
VHFp - 17

176

WithdrawnWednesday
VHFp - 18

December 6
Influences of Anti-Glare Surface Treatment on
Legibility and Visual Fatigue of Reflective-Type
Displays
S.-C. Jeng, Y.-R. Lin, C.-C. Liao, C.-H. Wen, P.-H. Lin*,
Y.-T. Lin*, S.-L. Hwang*
ITRI, Taiwan*Nat. Tsing Hua Univ., Taiwan

Influences of anti-glare surface treatment, radius of curvature andambient illuminance on legibility and visual fatigue of reflective-type
displays were studied. The results showed that legibility and visual
fatigue only depended on the surface treatment, and surface treatment
can improve legibility and reduce visual fatigue especially in the intenseambient illumination.
VHFp - 19

Evaluation of Line Drawings on 3-D Appearance
M. Nagai, K. Shoji, J. Kawashima, F. Toyama,J. Miyamichi
Utsunomiya Univ., Japan

We can perceive three-dimensional (3-D) objects from their twodimensional (2-D) line drawings in many cases. The reason why we canperceive only original 3-D shapes and their mirror version is consideredthat line drawings are usually produced at appropriate points of views
for the 3-D objects. In this paper, we propose a method for evaluating 3D appearance of line drawings that you produced as the illustrations of
3-D objects and confirm its availability by paired comparison method.
VHFp - 20

Layout Analysis of Scene Frames in Comic Images
T. Tanaka, K. Shoji, F. Toyama, J. Miyamichi
Utsunomiya Univ., Japan

In this research, a detection method of scene frames in a comics image
using density gradient is proposed. The proposed method can beapplied to comics with speech balloons or pictures drawn over scene
frames. Experimental results show that 60 percent of 672 pages in four
print comic booklets are successfully divided into scene frames by the
proposed method.
VHFp - 21

Vanishing Point Detection Using Line Segment
Clustering by Area Minimization of Triangles
A. Sugawara, K. Shoji, F. Toyama, J. Miyamichi
Utsunomiya Univ., Japan

In vanishing point detection, previous methods have a problem on
precision because of the errors of voting the lines on the Gaussian
sphere. We propose a novel method for vanishing point detection basedon clustering of line segments. Each vanishing point is calculated byminimizing the area of triangles formed by the clustered segments anda point. The area can be considered as the cost of the clusters. The
proposed method iterates the clustering and the evaluation of theclusters.
177

Wed./Thu.
VHFp - 22

December 6/7
A Proposal for Generation of High Resolution Image
using Image Shift
T. Hashimoto, T. Ikuma, H. Okamura, Y. Shimodaira
Shizuoka Univ., Japan

We propose the generation method of the high resolution image using
shifted images. Our method uses images that are taken with the small
sub-pixel moving. In order to check the effectiveness of high resolution
algorithm, we carried out the experiments. For the experimental
convenience, shifting the target was used instead of shifting the image
sensors. In this paper, the experimental results are discussed. As aresult, estimating the gray level of each sub-pixel could be verified using
image shift.

Thursday, December 7
9:00 - 10:20

Ohmi 3

VHF1: Human Factors
Chair:
Co-Chair:

H. Isono, Nippon Inst. of Tech., Japan
H. Hiruma, NHK, Japan

VHF1 - 1
9:00

Three-Dimensional Displacement of the Viewing
Space of Secure Display by Use of Visual
Cryptography
H. Yamamoto, Y. Hayasaki
Univ. of Tokushima, Japan

We propose a secure display technique that ensures the security ofdisplayed information. The encrypted information is perceived whenviewed within the limited viewing space. The purpose of this paper is todisplace the viewing space of the decoded image by changing only thedisplayed image. We have analyzed the relationships between theviewing zone and the pitch and position of the displayed image.
Furthermore, three-dimensional displacements of the viewing spacehave been demonstrated by use of two-layered liquid-crystal displays.
VHF1 - 2
9:20

Learning Saliency Estimation in the Video Based on
the Subjective Experiments
S. Nakagawa, N. Tsumura, T. Nakaguchi, Y. Miyake
Chiba Univ., Japan

It is considered that the gazing area obtained by the eye tracking
camera is the most important region of the image. From the analysis of
the gazing area for various kinds of the images, gazing area is wellcorrelated to the truncated region of color, density, and movement. In
this paper, we propose a new method to extract saliency region
automatically corresponding to the gazing area from the video image.

178

Thursday
VHF1 - 3
9:40

December 7
Suitable Reading Conditions for Human Reading
Habit
G.-C. Li, P.-J. Su, C.-H. Hsieh, K.-H. Chang, C.-C. Hsiao,
S.-Y. Fuh, W.-Y. Cheng, Y.-C. Liao, J.-C. Yang, K.-L. Lo,
D.-W. Li, Y.-P. Chang, Y.-A. Sha, J.-W., Shiu
ITRI, Taiwan

By adjusting the setting of letters on the document, the suitableconditions for human had been obtained. The settings of the words arerespective word size, word type, and polarity. By analyzing the result ofrecognition, comfort rating, searching time, and density of testing
document, the suitable condition is found, the letters with Arial font,positive polarity, and large size were the elements for comfortablereading. From the effect of density on reading, the limitation of
comfortable reading is investigated.
VHF1 - 4
10:00

A Usability Metric for Displays in Challenging
Environments
R. Sharpe, C. Cartwright, K. Wilson, S. Riches*, H. Orr**,C. Bailey***, C. Yin***, Y. Lee***
Univ. of Abertay Dundee, UK*Micro Circuit Eng., UK**Thin Film Solutions, UK***Univ. of Greenwich, UK

Display use in challenging environments is on the increase. A predictive
method of quantifying display usability would be of great use to thedisplay industry. We propose to develop a method using the Just
Noticeable Difference (JND) method and a vision model developed by
Barten. Our principle objective is to quantify a display and predict its
usability for certain tasks in exacting ambient environments.
----- Break -----

179

Thursday

December 7

10:40 - 12:05

Ohmi 3

VHF2: Color Reproduction
Chair:
Co-Chair:
VHF2 - 1:
10:40

Y. Shimodaira, Shizuoka Univ., Japan
N. Hiruma, NHK, Japan
Invited Recent Trend of Wide Gamut Standards for
Color Imaging
T. Matsumoto, T. Nakatsue, H. Eto, Y. Akiyama, S. Haga,
M. Sakurai, Y. Shirochi, Y. Shimpuku
Sony, Japan

xvYCC - a new wide gamut standard for video systems wasstandardized by IEC in January 2006. We have developed a newdisplay / video camera and wide-gamut characterizing tools for xvYCC.
The definition of xvYCC is the same as the standard for inside theconventional BT.709 gamut and maintains downward compatibility withcurrently-used video signals. Video systems adapting this standard will
have improved accuracy of color reproduction of real world.
VHF2 - 2
11:10

Subjective Evaluation of Gamut Extension Methods
for Wide-Gamut Displays
R. Muijs, J. Laird, J. Kuang*, S. Swinkels
Philips Res. Europe, The Netherlands*
Rochester Inst. of Tech., USA

With the rapid emergence of wide-gamut display technologies, there isa growing need for adequate color mapping algorithms with which EBUcompliant video can be extended to a wider reproduction gamut. To
identify appropriate gamut extension strategies, we have designed
several prototype algorithms and subjectively evaluated theirperformance. We observed a preference for a method that adaptively
balances chroma with lightness modulations. This algorithm
consistently outperformed accurate color reproduction within the EBU
gamut, thus confirming the added value of wide-gamut displays.
VHF2 - 3
11:30

Visual Optical Model to Explain of Displayed Image
Visibility or Legibility Depending on Colors in
Automotive Multicolor Emissive Display Systems
H. Miura, S. Okabayashi, T. Hatada*
Meijo Univ., Japan*Tokyo Polytech. Univ., Japan

This paper, we discussed in-vehicle emissive display systems underbright ambient light, have investigated phenomenon “Inequality
Perception of Colors” of multicolor display systems, constructing a“Wash-out” simulator through this investigated we have the occurrence
phenomenon and proposal perceptual cognitive model. Then we havepromoted the guideline of in-vehicle multicolor display systems design
under “Wash-out” phenomena.

180

Thursday
VHF2 - 4L
11:50

December 7
Simulation and Evaluation of Viewing Angle
Characteristics of LCDs based on Colorimetric
Modeling
S. K. Jang, Y. H. Kim, B. T. Ryu, K. T. Kim, Q. S. Chen,
J. O. Lee, J. Y. Yeom, C. W. Kim
Inha Univ., Korea

This paper presents a colorimetric modeling technique for accurate
simulation of LCD images with viewing angles. It generates simulated
images of arbitrary viewing angles with limited measurements. It would
simplify human visual experiments to evaluate the viewing angle
characteristics of LCDs. Also, it can be employed for deriving
quantitative measures to describe viewing angle properties of LCDs.
Accuracy of simulation is improved compared to gamma modification
method. Human visual experiments with the simulated and real images
show similar trends.
----- Lunch -----

13:40 - 15:20

Ohmi 3VHF3: Image Quality
Chair:
Co-Chair:S. Clippingdale, NHK, Japan
H. Isono, Nippon Inst. of Tech., Japan

VHF3 - 1
13:40

A Visualization Tool for Evaluating AngularDependent Colorimetric Performance of LCD
J.-J. Lin, W.-C. Cheng
Nat. Chiao Tung Univ., Taiwan

We have developed an interactive visualization tool that emulates thevisual effect of an LCD when viewed at a specific angle such that theuser can easily assess its colorimetric performance such as color shift,saturation degradation, and contrast/luminance reduction. The target
LCD has to be characterized to generate its colorimetric parameters at
different viewing angles. The proposed tool then calculates the resulting
image by table-lookup and interpolation. This tool is particularly usefulwhen evaluating multiple LCDs simultaneously or remotely.

181

Thursday
VHF3 - 2
14:00

December 7
Physical Properties Influencing the Viewing Angle
Performance of Flat Displays
S. L. Qin, X. H. Zhu, H. C. Yin, J. Xia, C. Teunissen*,
I. Heynderickx**
Southeast Univ., China*
Philips Consumer Elect., The Netherlands**Philips Res. Labs., The Netherlands

The viewing angle of a display is limited by its physical characteristics,
which can be measured with appropriate measurement equipment.
Display end-users determine which viewing angle is still acceptable,
based on their internal reference. In this article, visibility andacceptability thresholds are determined for various displays types in aperceptual experiment, and the displays are physically characterized fora wide range of viewing angles. Differences in threshold viewing angles
are explained by physical properties of the display technologies.
VHF3 - 3
14:20

CIECAM02 Based Practical Visual Evaluation Method
for Viewing Angle Characteristics of LCDs Using
Hardcopy
Y. Mitsumori, M. Yamada, K. Miyazaki
Fuji Film, Japan

We have developed a practical method for evaluating viewing angle
characteristics by reproducing each viewing angle image on hardcopy
through CIECAM02 model where adaptation effects to the environment
are included. The method considering visual adaptation enables toevaluate LCD appearance depending on the way of observation and theviewing conditions.
VHF3 - 4
14:40

Effect of Backlight Complexity on Perceived Image
Quality for HDR Displays
S. Swinkels, R. Muijs, E. Langendijk, F. Vossen
Philips Res. Labs., The Netherlands

We evaluated the added value of a segmented dimmable backlight onperceived image quality by means of a subjective experiment. The
complexity of the segmented backlight was varied by changing thenumber of segments and the width of the LED light profiles. The results
obtained show that the contrast improvement achieved by backlightdimming is highly preferred over systems without backlight modulation,even when the backlight is only dimmed globally or over a few spatial
segments. Furthermore, the image quality increases gradually with thenumber of segments and then saturates for more than 2000 LEDs.

182

Thursday
VHF3 - 5
15:00

December 7
Gradient Based Synthesized Edge Image Using
Multiple Exposure Images
A. Rövid, T. Hashimoto, Y. Shimodaira,A. R. Várkonyi-Kóczy*Shizuoka Univ., Japan*BUTE, Hungary

High dynamic range of illumination may cause serious distortions andother problems in viewing and further processing of digital images. In
this paper a new tone reproduction preprocessing algorithm isintroduced which may help in developing hardly or non-viewablefeatures and content of the images making easier the further
processing of them.
----- Break -----

15:40 - 17:00

Ohmi 3

VHF4: Moving Image Quality (1)Chair:
Co-Chair:T. Kurita, NHK, Japan
T. Tamura, Tokyo Polytech. Univ., Japan

VHF4 - 1
15:40

Comparison of Methods for Reducing Motion
Artifacts in LCD TV
P. Cirkel, P. Vereyken
Philips Consumer Elect., Belgium

In this paper the following methods for reducing motion artifacts:
Scanning/Blinking backlight, Black data insertion and Double frame rate
driving, are compared. This is done by measuring the blur edge time on
LCD displays. It appears that a large part of the motion artifact is related
to the non-idealities in applying the method rather than the method
itself. Moreover in displays were the sample and hold artifact is tackled;ghost images are more distinguishing than the residual blur.
VHF4 - 2
16:00

Perceived Motion Blur in LCD Displays
C. Teunissen, X. Li*, Y. Zhang*Philips Consumer Elect., The Netherlands*Southeast Univ. China

Several methods to improve the motion performance of LCD displays,
such as overdrive and scanning backlight, have been introduced.
Different measurement systems have been developed to quantify these
improvements. Most systems characterize perceived motion blur withphysical characterization only. In this article, measured temporal step
responses are used to characterize the perceived motion blur, andmodel predictions are validated with a perception experiment.

183

Thursday
VHF4 - 3
16:20

December 7
Reduced Flicker Visibility in Impulse Type Displays
When Rendering Video Sequences
Y. Tu, L. Wang, K. Teunissen*, I. Heynderickx**, C. Li**Southeast Univ., China*Philips Consumer Elect., The Netherlands**
Philips Res. Labs., The Netherlands

Impulse type backlight driving reduces motion blur, caused by the
sample-and-hold effect of LCD displays. A side effect is that large-area
flicker will be introduced as in CRTs. The flicker visibility for various
settings of a scanning backlight system and with different 60 Hz video
fragments is studied in a perception experiment. Results show that theperceived flicker is considerably reduced for a moving sequence,compared to a still image with the same content.
VHF4 - 4
16:40

Brightness Enhancement of Advanced Over-Drive
Technology (AOT)
A. Chao, C. H. Yu, C. Lee, C. C. Chen, F. T. Pai, T. S. Jen
HannStar Display, Taiwan

We ever proposed and simulated an advanced over-drive technology(AOT) to improve the moving picture response time (MPRT) on TN type
TFT-LCD. However, the brightness sacrifice make the BL cost
increased. In order to reduce the brightness sacrifice, we developed
and realized a modified AOT by (1) adopting gray data resetting (GDR)
function, and (2) incorporating the fastest 3ms LCD cell. In
consequence, the brightness can increase up to 20 % compared to ourprevious system.
----- Break -----

17:20 - 18:35

Ohmi 3

VHF5: Moving Image Quality (2)Chair:
Co-Chair:J. Bergquist, Nokia Japan, JapanT. Kurita, NHK, Japan

VHF5 - 1
17:20

Improvement and Evaluation Methods for Motion
Color Blurring by Using Pursuit Camera
Y. Enami*, K. Oka**
Otsuka Elect., Japan**Nanosoftware, Japan*

Motion color blurring is significant problem on flat panel displays. We
have proposed index of motion color blurring evaluation namely CBA(Color Blur Area) in IDW ’05. In this study, we approach improvement on
motion color blurring of PDP-TV and DLP-projector. We evaluate
improvement effects of the motion color blurring by using CBA. We
confirm that CBA is an effective tool.

184

Thursday
VHF5 - 2
17:40

December 7
Subjective Evaluation Based on Analysis ofCorrelation between Physical Properties andVisualization of Various Motion Blurs on LCDs
Y. Hisatake, H. Ito, Y. Kawata, A. Murayama
Toshiba Matsushita Display Tech., JapanWe analyzed the correlation between three kinds of visualization of the
motion blur (colour of blurs, luminance of the blur and sharpness ofobject images) and physical properties in regard to image properties
and panel characteristics. We also performed subjective evaluations to
specify optimal or allowable level of motion blurring with various images
in one CRT display and four types of LCDs with various characteristics.
VHF5 - 3
18:00

On the Complexity of Motion Fidelity Metrics
S. Sluyterman, M. Klompenhouwer*
Philips Lighting, The Netherlands*Philips Res. Labs., The Netherlands

The present method of characterizing the motion fidelity by just looking
at the timing of the10% and 90% values of a luminance transient is not
sufficient. A number of improvements in motion fidelity are not honoredby this metric. A few directions for a new metric for motion blur will begiven.
VHF5 - 4L
18:20

Motion Artifact Comparison of PDP and MBR LCD:World’s Best MPRT LCD
K. D. Kim, J. K. Yoon, M. Lim, H. H. Shin, I. J. Chung
LG.Philips LCD, Korea

The MBR LCD, the world’s best MPRT LCD is reported for the first time.
Moving image quality has bothered LCD TVs constantly, compared with
PDP and CRT TVs. However, the MBR LCD cleared almost the last
weakness of LCD TVs in image quality as we obtained 4.6 ms MPRT.
Moreover, by means of visual perception test, we revealed it is superior
to a PDP in moving image resolution by about 50%.

Author Interviews
18:40 – 19:40
Supporting Organizations:Technical Group on Information Display, ITE

185

Thursday

December 7

Workshop on Projection and Large-Area
Displays, and Their Components
Thursday, December 7
9:00 - 12:00

Ohmi 5-7

Poster LADp: Components and circuits for projector
LADp - 1

Low Power Frame Buffer Pixel Circuits for LCOS
Microdisplays
Y. Song, Z. Ling
Changchun Inst. of Optics, Chinese Ac. of Sci., China

In the frame buffer pixel circuits, extra power was dissipated to
implement the data transfer operation. Extra power dissipation can not
only increase power but also decrease the device reliability. One
method to deal with it at pixel level is needed. In this novel pixel circuit,
one PMOS transistor acts as a simple analog comparator, in order todetermine whether the discharging by comparing the current pixel
voltage and the next frame data voltage.
LADp - 2

Projection Lens Design for LED Based Mini Projector
C. R. Ou, K. L. Huang, C.-M. Ou*, C. S. Chen**,C. Y. Kung***Hsiuping Inst. of Tech., Taiwan*Kainan Univ., Taiwan**Nat. Kaohsiung Univ. of Applied Sci., Taiwan***Nat. Chung Hsing Univ., Taiwan

Mini projection devices are getting many attentions for the past few
years. Several kinds of excellent approaches have been proposed. This
article will discuss some designing issues for the mini projection lens.

186

Friday

December 8
Friday, December 8

9:00 - 10:20

Ohmi 8

LAD1: Projection Components
Chair:
Co-Chair:H. Moench, Philips Res. Labs., Germany
K. Ohara, Texas Instrs., Japan

LAD1 - 1
9:00

Rear Projection Screen with Improved Wider Vertical
Viewing Angle
M. Kimura, T. Kashiwagi, Y. Fukano
Dai Nippon Printing, JapanA new rear projection screen with wider vertical viewing angle has beendeveloped. This screen consists of crossed total-reflection prisms thathas a wider vertical viewing angle. The advantages of this screen are not
only wider vertical viewing angle, but also higher uniformity, improved
black level, and reduced ghost images. The rear-projection TV used thisscreen can be competitive with other large screen size TVs.
LAD1 - 2
9:20

High Contrast Screen for a Front Projection System
M. Ehashi, T. Fujiwara, A. Kagotani, S. Iwata,
K. Moronaga, S. Takahashi
Toppan Printing, Japan

Conventional front projection systems have the drawback of a inferior
contrast under an ambient light. To avoid this drawback, we madescreen design suitable for a projector with selected characteristics forthe diffusion and reflection layer. As a result, we could get a better
contrast screen than existing screens. The image quality by the newdeveloped front projection screen was less affected.
LAD1 - 5L
9:40

Micro-Projectors for Virtual Interfaces
K. Lieberman, Y. Sharon, E. Naimi
Lumio, Israel

Static and quasi-dynamic micro-projector modules for virtual interfaces
are presented. These miniature modules, which can measure as small
as 6mm in diameter can project large images at short throws lengths
and strongly oblique angles. Highly efficient diffractive modules suitablefor embedding in mobile devices are described. Design considerations
and applications for small, quasi-dynamic LED based projectors for avariety of virtual interface geometries are also presented.

187Friday
LAD1 - 4
10:00

December 8
Three-Dimensional Simulation of VAN LC
Configurations for Advanced LCOS Display Panels
D. Cuypers, H. De Smet*, A. Van Calster*
IMEC vzw, Belgium*Ghent Univ., Belgium

LCOS VAN microdisplays are rapidly evolving to be the devices ofchoice for high-end projection applications. With the advent of very highpixel count devices such as the so-called 8Mpixel displays, it becomes
worthwhile to explore the characteristics of the fringe fields and theirconsequences in such devices in more detail. This paper describes theimplementation and application of a three-dimensional simulator thatenables us to maximise the optical performance of upcoming 8Mpixel
microdisplays by tuning the liquid crystal parameters.
----- Break -----

14:00 - 15:30

Ohmi 1

LAD2: Emerging Illumination
Chair:
Co-Chair:
LAD2 - 1:
14:00

I. Kawakami, Tokyo Inst. of Tech., Japan
S. Shikama, Mitsubishi Elec., Japan
Invited Photonic Crystals - For nano-photonics to
Display S. Noda, T. Asano, M. Fujita
Kyoto Univ., Japan

Photonic crystals, in which the refractive index changes periodically,
provide an exciting new tool for the control of light and have received akeen interest from a variety of fields. In this presentation, I will review
the recent progress in photonic crys-tals aiming at the applications fornanophotonics to displays.
LAD2 - 2:
14:25

Invited Trends in Laser Light Sources for Projection
Display
A. Mooradian, G. Niven
Novalux, USA

New laser-based light sources are highly desired for projection displays
because of the need for longer lifetime, lower etendue, and higher color
gamut. High power, frequency doubled red, green and blue (RGB)
surface emitting diode laser arrays have been developed for use in low
cost projection microdisplay televisions.

188

Friday
LAD2 - 3
14:50

December 8
Personal Projection UJoy
H. Moench, U. Mackens, P. Pekarski, A. Ritz,
G. S’Heeren*, W. Verbeek*
Philips Res. Labs., Germany*Philips Lighting, Belgium

Personal projectors are compact and affordable devices used forgaming, entertainment or photo projection. The new 50W Ujoy lamp
system enables efficient projection systems with a screen brightness of
200-300lm, combined with an excellent colour performance. Lower
cooling requirements, the potential for battery operation and the low
voltage input makes it the ideal source for this new category of
projectors.
LAD2 - 4
15:10

Development of High Efficiency Collection Optics for
Lamp-Based Projectors
M. Kuwata, H. Takeuchi, T. Sasagawa, S. Okamori,H. Sugiura
Mitsubishi Elec., Japan

We have developed high-efficiency collection optics for improving thelight use efficiency of lamp sources. The optics, equipped with anaspheric reflector and a front glass, are able to effectively couple lightfrom the light source by controlling the image size of lamp arc on thecollecting surface appropriately for each direction of radiation. In thepresent prototype, luminance at the screen center is improved by 10%of the conventional.
----- Break -----

15:40 - 17:00

Ohmi 1

LAD3: Digital Cinema & Home Theater
Chair:
Co-Chair:
LAD3 - 1:
15:40

G. Niven, Novalux, USA
T. Hayashi, 3M Asia Pacific, Japan
Invited Digital Cinema Ready for Full Deployment
C. Colpaert
Barco Media & Entertainment, BelgiumThis article will elaborate on the DLP Cinema technology and compare
it with other light valve technologies. Further, the importance of the DCI
specification for the digital cinema industry will be explained. Next
Barco’s digital cinema product portfolio is reviewed. And finally thebusiness model (based on virtual print fee) will be discussed.

189

Friday
LAD3 - 2:
16:05

December 8
Invited Outlook of Color Space Management
Evaluation Material of Digital Cinema
I. Kawakami
Tokyo Inst. of Tech., JapanThe mastering monitor of CRT that become the standard of the image
evaluation being start disappearing from the market soon become a big
problem on the site of the image production digital. As for this color
space management evaluation material “CoSME”, non-compression
data 1920*1080,10bits,RGB 4:4:4 when various data that relates to thecolor reproduction.
LAD3 - 3
16:30

YC-Separation Type Projector with Double
Modulation
Y. Kusakabe, M. Kanazawa, Y. Nojiri, M. Furuya*,
M. Yoshimura*NHK, Japan*
Victor, Japan

We propose a “YC-separation type projector” that features double
modulation to obtain high resolution and high dynamic range images.
While a conventional projector contains three modulators for red, green
and blue and outputs light after combining these modulated lights, ourprojector has another modulator for luminance to modulate the
combined RGB modulated light. An experimental projector wasdeveloped for which the resolution was 3840 × 2160 pixels and we
confirmed the projector had a high dynamic of 1.1-million to 1.
LAD3 - 4
16:45

Efficient Method of LED Light Recycling for
Increased Brightness for Projection Display
Applications
L. Kenneth, S. Inatsugu
Wavien, USA

The Wavien’s LED light recycling system allows partial light coupling tothe output and the balance of the light back into the LED chip for
efficient recycling of light, thus increase the brightness of the LED lightsource. The recycling can be categorized into spatial recycling, angularrecycling, and combined spatial and angular recycling. Theoreticalanalyses are described here. Experiments are being conducted and theresults will be presented.

Author Interviews
17:00 – 18:00
Supporting Organizations:Technical Group on Information Display, ITE
Technical Committee on Electronic Information Displays, Electronics
Society, IEICE
Optop-electronic Materials and Devices Study Specialty Section, IEIJ
Liquid Crystal Display Forum, JLCS
190

Wednesday

December 6

Workshop on Electronic Paper
Wednesday, December 6
13:20-14:45

Ohmi 9EP1: Electronic Paper (1)Chair:
Co-Chair:EP1 - 1:
13:20

G. Zhou, Philips Res, The Netherlands
A. Suzuki, Ricoh, Japan
Invited Electronic Paper: It’s all about flexibility
A. Ancin, A. Henzen, J. van de Kamer, P. Leurs,
P. Janssen, G. Zhou*
iRex Techs., The Netherlands*Philips Res. Labs., The Netherlands

It is argued that many forms of flexibility are required to make e-paper
the real replacement of paper. Access must be faster and easier,content providers must join to provide documents that are tailor-madefor every e-reader on the market or better still make content adapt to its
surroundings; reading devices have to become as shock-resistant andwritable as paper, without the user realizing he is handling an electronic
device. All of this is about to happen.
EP1 - 2:
13:45

Invited Advances in MicroencapsulatedElectrophoretic Ink for Flexible Electronic Paper
Displays
M. D. McCreary
E Ink, USA

No abstract was submitted.
EP1 - 3
14:10

Motion Picture Driven by Active-Matrix Bistable
Cholesteric LCD
C.-C. Lu, P.-L. Liu, T.-A. Chen, H.-L. Wang, C.-Y. Chang,
B.-C. Chen, W.-T. Hsu, C.-C. Liao, L.-C. Chien
ITRI, Taiwan

Fast driving by active-matrix device makes bi-stable cholesteric liquid
crystal display (Ch-LCD) behave motion picture. A-Si TFT as the switch
device fabricated on the glass forms a 320 × 240 pixels array. The cellprocessing VA alignment on one side fills with cholesteric LC. Subframe fast driving scheme is used to operate transitions in multiple
phases. The demonstrated performance is up to 20Hz of video rate.

191

Wednesday
EP1 - 4L
14:30

December 6
A Novel Display Structure for Color Electronic Paper
Driven with Fully Transparent Amorphous Oxide TFT
Array
M. Ito, M. Kon, M. Ishizaki, C. Miyazaki, K. Imayoshi,
M. Tamakoshi, Y. Ugajin, N. Sekine
Toppan Printing, JapanWe demonstrate a novel display structure for a color electronic paper for
the first time. Fully transparent amorphous oxide TFT array is directly
deposited on color filter array and combined with E Ink Imaging Film.
Taking advantage of the transparency of the oxide TFT, the color filter
and TFT array are positioned at the viewing side of the display. This
novel display structure facilitates the alignment of the color filter and
TFT remarkably.
----- Break -----

15:00-16:15

Ohmi 9EP2: Electronic Paper (2)Chair:
Co-Chair:EP2 - 1:
15:00

M. Omodani, Tokai Univ., JapanS. Maeda, Oji Paper, Japan
Invited Electronic Paper Based on Particle Movement– Electrophoretic and Toner Display –T. Kitamura
Chiba Univ., Japan

With the increasing importance of reading electronic documents,
expectations are high that a new electronic paper can be developed thatis as convenient as conventional hard-copy paper and enables accessto digital information. At present, a great deal of fundamental andapplied research is being carried out on various methods of producing
electronic paper, including microcapsule-type electrophoretic displays
and toner displays based on the movement of fine particles.
EP2 - 2
15:25

Withdrawn

EP2 - 3L
15:45

Optimized Ratio of Two Dyes in Decolorable Tonerfor Coloring Density, Erasability and Lightfastness
S. Takayama, T. Gotanda, Y. Sekiguchi, K. Sano
Toshiba, Japan

The indolyl phthalide dye has high coloring ability and goodlightfastness for decolorable toner. In contrast, CVL, crystal violet
lacton, has the good erasability. However, it has a problem concerning
lightfastness. The optimum ratio of the two dyes for high coloring ability
and good erasability without deterioration of lightfastness has been
determined to be from 7 to 18 % of CVL in the case of a mixture of thetwo dyes.

192

Wed./Thu.
EP2 - 4L
16:00

December 6/7
All-Solid-State Complementary Coloring
Electrochromic Windows Based on Viologens
Y. Kim, Y. Kim*, S. Yang**, Y. Kim, E. Kim
Yonsei Univ., Korea*Dongguk Univ., Korea**
Polychrom, Korea

All-solid-state electrochromic windows based on Viologen which has
blue color transition were assembled with photo polymerizable
electrolyte. Higher and faster electrochromic effect was observed in an
ECD with a complementary structure, in which the anode and cathodewere coated by poly(aniline-N-butylsulfonate)s and viologen layer,
respectively. An all solid state EC display based on an optimized
condition showed EC response at -1.8V within 5s.

Author Interviews
18:00 – 19:00

Thursday, December 7
9:00-12:00

Ohmi 5-7

Poster EPp: Electronic Paper
EPp - 1

Flow of LC and Migration of Fine Particle in Mobile
Fine Particle Display (MFPD) Cells
K. Shimoyama, T. Takahashi, S. Saito, Y. Toko*
Kogakuin Univ., Japan*
Stanley Elec., Japan

In our previous paper, we proposed a novel type of electrophoretic
display named as an MFPD in which a nematic liquid crystal is used asa solvent for fine particles. In this report, a model for the mechanism of
migration of particles in the MFPD cell is proposed. A theoreticalexpression for the velocity of fine particles is derived. Furthermore, a
new type of MFPD cell with layered structure is proposed to improve thecontrast ratio of MFPDs.
EPp - 2Single-Substrate Microencapsulated LCD
S.-H. Liu, W.-H. Chao, K.-L. Cheng, Y.-Y. Hsu
ITRI, Taiwan

A mixture of high order parameter dichroic dyes for guest-host liquid
crystals has been employed to be the substitute of polarizers. The novel
process for reflective mode is created by spattering the metals as areflector as well as electrode simultaneously. The single-substrate
approach by reducing one ITO/PET is responsible to enhancereflectivity and flexibility of the display.

193

Thursday
EPp - 3

December 7
Inkjet Printed Multicolor Cholesteric LCD
J.-M. Ding, Y.-R. Lin, C.-H. Chen, R.-D. Chen, C.-Y. Lin,
H.-L. Wang, C.-C. Lu, C.-C. Liao, W.-H. Hou
ITRI, Taiwan

This report represents the manufacturing process for flexible multicolor
cholesteric liquid crystal displays with the help of inkjet printing
technology. The chiral materials are jetted into the pixel areas withdesigned patterns. The cholesteric liquid crystal gels are adopted as
the display medium. After forming various functional layers on thecholesteric liquid crystal gel filled microcell, we realize a segment typeflexible, bistable, multi-color reflective display with single display
medium layer.
EPp - 4Multicolor Cholesteric LCD using an Inkjet Printing
System
H. M. Tsai, Y. C. Liao, F. K. Chen, J. P. Lu, K. L. Luo,Y. P. Chang, K. Cheng, Y. Z. Lee
ITRI, Taiwan

The ink-jet printing phenomena of three cholesteric liquid crystals withdifferent reflective wavelength were investigated. Due to high viscosityof ChLC in room temperature, we heated the viscous inks to beprintable. The behavior of jetting droplets is determined by driving
voltage and waveform on print heads. The suitable IJP temperature anddriving voltage are 80°C and 100V irrespective of little viscosity
difference among three ChLCs. Based on the results, we fabricated themulticolor ChLC display by inkjet printing technology.
EPp - 5L

Preparation of Polymer Particle and Its
Electrophoretic Properties
S. Watanabe, S. Nakamura, N. Miyagawa, T. Kitamura
Chiba Univ., Japan

Polymer particles for an electrophoretic image display (EPID) wereprepared by dry in liquid method. Emulsion including styrene-acryl copolymer and solvent in water is dried up for long time. The electronic
charge and drift mobility of electrophoretic particle were calculated by
the measurement of electrophoretic induced current.

194Thursday
EPp - 6L

December 7
Late-News Paper Enhanced mobility of New Thieno[3,2] Thienophen Oligomer TFTs with Al2O3 Gate
Dielectrics
L.-M. Do, K.-H. Baek, K.-C. Song*, S. J. Yun, Y.-S. Yang,
E. H. Lim**, H.-K. Shim**
ETRI, Korea*Univ. of Chungnam, Korea**
KAIST, Korea

The organic thin field-effect transistor (OTFT) with new 2,5-bis-(50-hexyl[2,20]bithiophenyl-5-yl)-thieno[3, 2-b] thiophene (T2TT) were examinedwith various gate dielectrics. The mobility of T2TT semiconductior
material strongly depends on interface and insulator properties. The
Al2O3 gate insulator which prepared low temperature plasma enhanced
atomic layer deposition (PEALD) method is better performance thansilicon oxide insulator.

Supporting Organization:
The Imaging Society of Japan

Outstanding Poster Paper
Awards Ceremony
Friday, December 8
See page 9 for details

Euro Display ’07
September 17–20, 2007
Moscow, Russia
195Thursday

December 7

Workshop on
MEMS for Future Displays andRelated Electron Devices
Thursday, December 7
9:00 - 9:05

Ohmi 10Opening
Opening Remarks
9:00
M. Nakamoto, Shizuoka Univ., Japan
9:05 - 10:35

Ohmi 10

MEMS1: Emerging MEMS Technologies
Chair:
Co-Chair:D. Pribat, Ecole PolyTech., France
J. Agostinell, Eastman Kodak, USA

MEMS1 - 1: Invited Recent Technological Trend and Application
9:05
of MEMS
H. Fujita
Univ. of Tokyo, JapanMEMS fabrication technology of silicon and related materials in
micrometer scale has matured. Three dimensional micro structures andmovable devices were made and successfully operated. Three trends
are emerging: (1) Integration of MEMS with electronic and optic
elements. (2) Large area MEMS by printing or embossing. (3) Utilizationof nano and bio materials in MEMS. MEMS application has also
expanded to IT apparatus including display and cellular phone, bio
chemical chips, and nano technology tools.
MEMS1 - 2: Invited Complexity of MEMS and Multi-Scale Systems
9:30
S.-G. Kim, M. K. Koo*
MIT, USA*MEMS Solution, Korea
Tiny products must be designed in a systems context. Design andmanufacture of MEMS products would be much more successful if they
were designed systematically. Multi-scale systems require an
integration of components at nano-, micro- to macro-scales, wherecomplexity increases rapidly as the scale order grows. Manufacturing
them will be a much harder challenge than that of MEMS, if notdesigned systematically. An industrial case of a MEMS projection
display development is presented, and will be generalized to multi-scale
systems.

196

Thursday
MEMS1 - 3
9:55

December 7
Nanometer- Order Controlled Transfer Mold
Fabrication Method for Nanostructure Emitters andDevices
M. Nakamoto, G. Sato, K. Shiratori, T. Hayashi,
Y. Hanawa, K. Ono
Shizuoka Univ., Japan

Transfer Mold fabrication method has been developed to fulfill therequirements of the emitter tip sharpening, the emitter material
selection, uniformity and reproducibility. The tip sharpness of less than
10nm (1-5nm) radius, the good uniformity and the low work function
material usage are obtained. The Transfer Mold fabrication technique
has been one of the best technique of getting and controlling thenanometer order device structures as well as FEA structures.
MEMS1 - 4
10:15

Improvement of Luminance Efficiency by AC Mode
Drive for Large Size CNT-BLU
Y.-C. Jiang, T.-H. Tsou, B.-N. Lin, L.-E. Chou, C.-H. Fu,
M.-C. Hsiao, Y.-Y. Chang, W.-Y. Lin, M.-H. Lin,
C.-C. Liang, C.-N. Huang, C.-C. Lee
ITRI, Taiwan

The luminance efficiency of large size carbon nanotubes backlight unit
(CNT-BLU) has been improved by combining frequency and pulse
modulation. The frequency modulation well utilize the persistence of thephosphor and has better efficiency than before. In current status, its
properties can reach to 85% of uniformity, 8000nits of brightness.
Besides, our novel structure design and low cost manufacturing method
makes mass production possible in the near future.
----- Break -----

10:45 - 13:05

Ohmi 10

MEMS2: Optical MEMS and Sensors
Chair:
Co-Chair:S. Kim, MIT, USA
Y. Haga, Tohoku Univ., Japan

MEMS2 - 1: Invited Review of MEMS and MOEMS Developed at
10:45
LETI-MINATEC
S. Fanget, P. Robert
CEA-LETI-Grenoble, France
Three different devices developed at CEA-LETI within the framework of
MOEMS thematic are presented in this paper. We focus at first on two
kinds of deformable mirrors (DM) with continuous mirror. These two
devices have been realized for optical data storage and astrophysics
applications. Afterwards, an optical scanner expendable for a large
number of applications will be presented. Technological processes used
for their realization and their optical properties will be described.

197

Thursday

December 7

MEMS2 - 2
11:10

Reduction in the Breakdown Voltage of a Rare Gas
Discharge Plasma by High-Energy Electrons Emitted
from a Nanocrystalline Poly-Silicon Ballistic Emitter
T. Ichihara, T. Hatai, K. Aizawa, T. Komoda, N. Koshida*
Matsushita Elec. Works, Japan*Tokyo Univ. of A&T, Japan

Ignition characteristics of a xenon gas discharge have been improvedby providing high-energy ballistic electrons as seed electrons. A
nanocrystalline poly-silicon cold cathode is used as a ballistic electron
source. The dc breakdown voltage for the mercury-free xenon
discharge is efficiently reduced compared to a conventional filamenttype hot cathode at the same emission current.
MEMS2 - 3
11:30

Through-Hole Interconnection in Si Substrate for
Wafer Level Package
M. Kamakura, H. Shiroishi, T. Taura, R. Tomoida,
T. Saijo, K. Tone and K. Kataoka
Matsushita Elec. Works, JapanThe demand for downsizing of devices built in electronic products
becomes stronger. These days, Wafer level packaging (WLP)
technology is important method to realize drastic downsizing of MEMS
devices, in which electric interconnection through package wafer isneeded. We developed through-hole interconnection technology which
includes through-hole formation by D-RIE and filling conductive material
into through-hole by electroplating. In this paper, we report our throughhole interconnections.
MEMS2 - 4
11:50

A High-Performance Miniature Microphone with a
Monocrystalline Silicon Diaphragm
Y. Iguchi, M. Goto, K. Ono, T. Sugimoto, A. Ando,
T. Kurita, T. Tajima, F. Takeshi*, T. Himori*, Y. Yasuno*
NHK, Japan*Panasonic SC Device Solutions, Japan

This paper describes a micromachined condenser silicon microphonewith a thin monocrystalline silicon diaphragm and a wide air gap. The
transducer (the sensing element of a microphone) is fabricated as one
body with a simple process using a bonded silicon wafer, which
promises outstanding durability and high productivity. Measured
sensitivity is comparable to the sensitivity of a conventional
broadcasting microphone. The low noise and small distortion of the
microphone ensure a sufficiently wide dynamic range for practical use.

198

Thursday
MEMS2 - 5
12:10

December 7
Hermetically Sealed Ultra-Miniature Fiber Optic
Pressure Sensor
S. Nakamura, T. Matsunaga, K. Totsu, W. Makishi,
M. Esashi, Y. Haga
Tohoku Univ., Japan

Ultra-Miniature fiber optic sensor of 125 µm diameter has beendeveloped by using MEMS fabrication techniques. The Fabry-Perotcavity is formed at the end of an optical fiber. The pressure induced
deformation of the Fabry-Perot cavity diaphragm alters the cavity
length. Fabricated sensor structures exhibited temperaturedependency. To solve this problem, hermetic sealing using a thin-filmsolder bonding and Cr thin-film deposition on the sidewall of the sensor
have been tried.
MEMS2 - 6
12:30

Fabrication of Field Emission Arrays with Hafnium
Nitride CathodeY. Gotoh, N. Setojima, T. Kanzawa, H. Tsuji, J. Ishikawa
Kyoto Univ., Japan

Fabrication of field emission arrays with hafnium nitride cathode isdemonstrated by using microfabrication technique. A silicon substrate
was etched to form an array of silicon cones, followed by deposition ofhafnium nitride thin film by rf magnetron sputtering. After the above
process was over, an insulating layer made of silicon dioxide and a gatelayer made of niobium were deposited. Using the etching backtechnique, gate apertures were made. The fabricated device showed arelatively good field emission performance.
MEMS2 - 7L
12:50

3-Dimensional Microfabrication of
Polytetrafluoroethylene by Using Synchrotron
Radiation
M. Horade, M. Tsudo, S. Khumpuang, S. Sugiyama
Ritsumeikan Univ., Japan

Microfabrication technique using SR ablation for 3D-PTFE structure isreported in this work. We have investigated a technique to form anarbitrary shape of microstructure. The technique so called PCT is wellknown in fabricating only PMMA microstructure. Since PTFE shows
better material characteristic than that of PMMA, the fabrication of
PTFE by PCT has been initialized. PTFE microstructures with a slopedside-wall were fabricated by SR ablation controlled by a study of
exposed energy distribution to the surface of PTFE.
----- Lunch -----

199

Thursday

December 7

14:00 - 15:30

Ohmi 10

MEMS3: Fundamental Mechanism, Materials andProcess Technologies
Chair:
Co-Chair:S. Fanget, CEA-LETI-Grenoble, France
H. Fujita, Univ. of Tokyo, Japan

MEMS3 - 1: Invited Microgrippers for Biological Applications
14:00
J. K. Luo, W. I. Milne, Y. Q. Fu, A. J. Flewitt,
S. M. Spearing*
Univ. of Cambridge, UK*Univ. of Southampton, UK
There is a continuing need to select biological cells from infected
tissues for single cell proteomics and genetic research, formicroinjection in drug discovery etc. All of these rely on miniaturized
microgrippers. We have developed two types of microgrippers. Planar
microtweezers were made from a 4µm thick electroplated Ni, using an
in-plane electrothermal actuation mechanism, while the normally closed
microcages consist of a polymer/Al/diamond like carbon trilayer
structure. Both of these demonstrated the capability of capturing a
micro-object.
MEMS3 - 2: Invited Nanotechnologies in Displays: the Use of
14:25
Carbon Nanotubes and Semiconductor Nanowires
D. Pribat
Ecole PolyTech., France
Devices made from individual carbon nanotubes or semiconductor
nanowires are known to exhibit impressive electronic properties.
However, they cannot be organised in a way compatible with large scale
manufacturing. In this talk, we will review some recent advances in theuse of these materials, from random networks of carbon nanotubes tothe development of templates for the organised growth ofsemiconductor nanowires.
MEMS3 - 3
14:50

200

Withdrawn

Thursday
MEMS3 - 4
15:10

December 7
Characteristics of Near-Infrared and Visible
Femtosecond Laser Processing for Semiconductor
Y. Izawa, S. Tokita, M. Fujita*, M. Hashida** and Y. Izawa
Osaka Univ., Japan*Inst. for Laser Tech., Japan**
Kyoto Univ., JapanThe characteristics of femtosecond laser processing for silicon arereported in this paper. Below the fluence for ablation threshold,femtosecond laser irradiation induced an amorphization of crystalline Si(c-Si). Little above the fluence for the ablation threshold, non-thermal
ablation occurred. Processed areas had a negligible heat-affected zone
(HAZ). The thickness of the amorphoized layer and the depth of theablated area were related to the effective light penetration depth.
MEMS3 - 5L
14:50

Performance of Flexible SR-exposure Stages forMultiple Purposes in Micro/Nanofabrication
F. Kato, S. Fujinawa, S. Sugiyama
Ritsumeikan Univ.

In SR lithography, a key factor for high precision in fabrication of 3D
micro/nanostructures is the performance of SR exposure stage. We
have developed a flexible stage for multiple purposes of SR exposure
including stepper exposure, and PCT exposure. In this work, thespecification, installation and current status of using the multi-functional
stage with beamline-5 of AURORA storage ring at Ritsumeikan
University is introduced. The performance of the stage was observed at
150nm resolution which is applicable for nanomachining process.
----- Break -----

15:40 - 17:10

Ohmi 10

MEMS4: Displays and Imaging (1)Chair:
Co-Chair:J. Luo, Univ. of Cambridge, UK
M. Nakamoto, Shizuoka Univ., Japan

MEMS4 - 1: Invited GEMS: A Simple Light Modulator for High
15:40
Performance Laser Projection Display
J. Agostinelli, M. W. Kowarz, D. Stauffer, T. Madden,
J. G. Phalen
Eastman Kodak, USA
GEMS (grating electro-mechanical system), a digital MEMS-based
linear light modulator array, will be described. Implementation of the
GEMS device in a 1080p laser front-projection display demonstration
system will be discussed. The very high native bit depth and resolution,
extremely fast line time (no motion blur), together with the use ofspectral primaries and absence of visible pixel boundaries, result in adisplay with superb image quality, even for still images. Preferred
methods for calibration and color transformation will be disclosed.
201

Thursday

December 7

MEMS4 - 2: Invited Toward an iMoD Ecosystem
16:05
M. MilesQUALCOMM MEMS Tech., USA
iMoD technology is the basis for a MEMS display that exploits opticalinterference. QUALCOMM MEMS Technologies (QMT) is engaged in a
multi-front effort to commercialize iMoD displays. This presentation will
review the history of iMoD technology development to date, and discuss
QMT’s strategy, philosophy and transformation as it addresses the arrayof issues it must face to succeed.
MEMS4 - 3
16:30

A PZT-Actuated 2D Optical Scanner for MEMS Image
Projection Display
Y. Yasuda, M. Tani, M. Akamatsu, H. Toshiyoshi*
Stanley Elec., Japan*Univ. of Tokyo, JapanA MEMS 2D optical scanner for image projection display has beendeveloped by using piezoelectric unimorph actuators of PZT film made by
the ADRIP (arc discharge reactive ion plating) technique. Stable rasterscan by combining resosnant motion for the fast horizontal axis (16.4
kHz, optical 27 degrees) and for the slow vertical axis (77.4 Hz, optical 31
degrees) has made it possible to project monotone bitmap animations. A
quasi-static operation for the vertaical axis has been also investigated.
MEMS4 - 4
16:50

Dynamic Tactile Display with Arrayed Pin for Blind
Aid Using Micro Actuators
T. Matsunaga, W. Makishi, Y. Haga
TUBERO, Japan

Tactile pindisplay for blind aid and three dimensional pindisplay using
Shape Memory Alloy micro actuators has been fabricated anddeveloped. Character and graphic information are dynamicallydisplayed by making pins array up and down. Magnetic material tube is
attached to each pin and a permanent magnet fixes position of the pins
up or down state. The mechanism solves problems of heat storage andelectrical consumption of the SMA actuator because the current is
supplied only when the pins move.
----- Break -----

202

Thursday

December 7

17:20 - 18:45

Ohmi 10

MEMS5: Displays and Imaging (2)Chair:
Co-Chair:M. Miles, QUALCOMM MEMS Tech., USA
T. Komoda, Matsushita Elec. Works, Japan

MEMS5 - 1: Invited Development of Medical and Welfare
17:20
Microdevices Using Micro Technology
Y. Haga, T. Matsunaga, W. Makishi, K. Totsu*, M. Esashi*
TUBERO, Japan*
Tohoku Univ., Japan
Endoscopes and catheters are already widely used and new more
precise examinations and diagnoses are required. Small medical
devices with several functions for use in the human body can berealized installing microsensors and microactuators in the medical
devices. We have developed several microdevices for minimallyinvasive examinations and therapies using MEMS and related
microfabrication technologies. A dynamic tactile pin display whichdisplays Braille characters and graphic information has also beendeveloped using micro actuators.
MEMS5 - 2
17:45

Black Board-Type MEMS Interactive Display
R. Shigematsu, D. Tosu, A. Higo, H. Toshiyoshi, H. Fujita
Univ. of Tokyo, Japan

We propose a new type of an electronic re-writable blackboard thatkeeps the trace of finger-drawn strokes using the bitmap of scatting lightfrom segmental membrane. Images can be erased entirely or partiallyby releasing voltage or pulling back the membrane with magnetic force,
respectively. Thanks to the simplicity of the device structure andprinciple, the proposed display has scalability to an oversized board that
could be made by printing or embossing.
MEMS5 - 3
18:05

2D Laser Microscanner for Precise Laser Surgery
and Small Size Head Mount Display
W. Makishi, H. Akahori, T. Matsunaga, M. Esashi and
Y. Haga
Tohoku Univ., Japan

A 2D (two dimensional) laser microscanner system for head mountdisplay by direct projecting on the retina has been developed. The 2D
scanner system is made up of an optical fiber, a micro rod lens and a
2D microscanner. The 2D microscanner has three piezoelectricunimorph cantilevers that have a ball joint and a mirror. These
components are packaged into a 3.8 mm external diameter polymer
tube. The maximum inclined angle of the mirror is about 30 degrees.

203Thursday
MEMS5 - 4
18:25

December 7
Angle Tunable Prism for Optical Scanner
A. Takei, E. Iwase, K. Matsumoto and I. Shimoyama
Univ. of Tokyo, Japan

We propose an angle tunable liquid prism actuated by electrowetting.
Our prism makes an optical scanner smaller, because the laser sourceof the scanner can be put just below the prism. The prism consists of
two transparent plates and sandwiched liquid. The diameter and theheight of the prism are 2 mm and 1.5 mm, respectively. In this research,
we achieved the prism capable of shifting the light path to the right andthe left by 7 degrees.

Author Interviews
18:40 – 19:40

Otsu Festival
Friday, December 8
12:10–13:50(before Outstanding Poster Paper Awards Ceremony)Prince Hall (3F)
Otsu Prince HotelSee page 9 for details
204Thursday

December 7

Topical Session on
Display Electronic Systems
Thursday, December 7
9:00 - 12:00

Ohmi 5-7

DESp: Display Electronic Systems
Chair:

H. Okumura, Toshiba Research & Development Center

DESp - 1

Timing Control System for Flexible Black Data
Insertion on IPS-Pro PanelJ. Maruyama, Y. Ooishi, M. Nakamura*, I. Mori*,
S. Morishita*, T. Furuhashi*, K. Ono*
Hitachi, Japan*
Hitachi Displays, Japan

Using ‘Flexible BI’ (black data insertion) reduces the motion blur of an
LCD, without reducing the brightness. We discuss the timing control
system that is needed to make this technique suitable for IPS-Pro
panels. This system uses various techniques that improve its costperformance: those used to compress the frame memory needed forboth over-drive and flexible black data insertion, and those used tomake a smooth gamma curve when using a conventional 8-bit driver.
DESp - 2

New Driving Method for Field Sequential Colour
LCDs Using OCB ModeT. Fukami, S. Kawaguchi, S. Araki, M. Takeoka,
A. Takimoto
Toshiba Matsushita Display Tech., Japan

Recently, FSC-LCDs have been developed. They have several
advantages, but can result in artefacts such as colour mixing, gamma
mismatch and colour break-up by using conventional driving method.
We have developed a 9-inch diagonal FSC-LCD using OCB mode anda new driving technique, which consists of black and white insertion
driving. This enables us to achieve a high transmittance of 16% and ahigh contrast ratio of over 600:1 without causing these problems.

205Thursday
DESp - 3

December 7
An Area Efficient True 10-bit Source Driver for Flat
Panel Displays
C.-D. Go, J.-S. Kang, M.-S. Shin, J.-H. Kim, O.-K. Kwon
Univ. of Hanyang, Korea

In this paper, a true 10-bit gray scale source driver with 8-bit resistor
string DAC(Digital to Analog Converter) and 2-bit I-V converter typeDAC is proposed for small chip area TFT-LCD source driver. The 2-bit IV converter type DAC consists of a resistor and OTA(Operational Transconductance Amplifier) whose Gm(trans-conductance) is proportional
to a resistor. The chip area of the proposed 10-bit source driver IC isincreased only 28% compared with that of the source driver with 8-bit
resistor-sting DAC based on layout.
DESp - 4

A Full-Custom 300-Channel High-Voltage Display
Driver in an 80V 0.35 µm CMOS Intelligent Interface
Technology
H. De Pauw, J. Doutreloigne, H. De Smet, A. Van Calster
Ghent Univ. - IMEC, Belgium

A newly designed high-voltage driver accommodating a large variety of
non-versatile flat panel displays is implemented in a HV-extended
0.35µm CMOS technology. The driver features 65V driving capability on
all 300 outputs and is able of generating all kinds of complex highvoltage waveforms that are constituted out of 8 voltage levels (7 highvoltage levels and ground). The capabilities of the integrated circuit aredescribed through an SVGA-resolution passive matrix AFLC display
application.
DESp - 5

High Output Impedance LTPS TFT-Based Current
Source with Double Compensation
M.-P. Hong, J. Y. Jeong
Univ. of Suwon, Korea

We have designed constant current source for LTPS TFT analog circuit.
To cope with non-uniform device characteristics of TFT’s, we adopted
super transistor structure where four TFT’s behave as one TFT withvery good saturation characteristics. Two compensation means havebeen developed and implemented. From the HSPICE simulation
results, the circuit results less than 5% output current error for 50%
device property variation. We verify the usefulness by applying thecircuit to the folding ADC.

206

Thursday
DESp - 6

December 7
Performance Comparison of Motion Estimation
Methods for Frame Rate Up-Conversion
S. J. Kang, Y. H. Kim
Pohang Univ. of S&T, Korea

Frame rate up-conversion is a promising technique to reduce motion
blur of the hold-type display without decreasing luminance. This
technique uses motion estimation and its performance highly depends
on the performance of the motion estimation method it uses. This paper
investigates the performance of three well-known motion estimation
methods when used for frame rate up-conversion. In experiments, theblock matching method outperformed the optical flow method and thepel recursive method.
DESp - 7

Motion Blur Reduction Algorithm for Mobile LCD
S. R. Shin, H. H. Hwang, B. S. Bae*, S. H. Kim**
Image Lab., Korea*Hoseo Univ., Korea**
LG Innotek, Korea

We have developed a novel algorithm reducing motion blur in mobile
LCD. We proved that the proposed algorithm reduces motion blureffectively for moving pictures like movies and sports. This algorithm isvery simple and can be merged easily in LDI(LCD driver IC) as afunction block, which is a great advantage for low cost and thinner
mobile LCD modules.
DESp - 8

Implementation of Image Enhancement Processor
Using Saturation Extension
Y.-S. Jo, M.-R. Choi
Hanyang Univ, Korea

In this paper, we propose saturation extension methods in order toimplement image enhancement processor. The proposed methods areclassified with the MIE technique for Intensity enhancement of input
image and MSE techniques for saturation enhancement. The proposed
methods are focused on processing preference color for human visionin order to generate better image quality than the algorithms focused onprocessing uniformly to whole images.

207Thursday
DESp - 9

December 7
A Preliminary Image Evaluation on MoMA-BTC(Mobile Multi-Level Adaptive Block Truncation
Coding) for Small-Size Displays
H. Sasaki, H. Minamizaki, H. Okumura*Toshiba Semiconductor, Japan*
Toshiba Res. Dev. Ctr., Japan

A proposed “mobile multi-level adaptive BTC” reduces size ofembedded RAM in mobile source driver to 1/4 (VGA with QVGA-size
memory). It corrects border artifact especially of windows on desktop
PC images, and corrects jagged edges for natural images. It also
improves roughly 6.5 dB PSNR compared with conventional quaddecimation for natural images.
DESp - 10L

Performance Analysis of Vector Quantizer for
Imaging Data Clustering Algorithms
T.-W. Hou*, H.-K. Ku*’**, Y.-T. Chen*’***, H.-S. Koo****Nat. Cheng Kung Univ., Taiwan**
Fortune Inst. of Tech., Taiwan***Bureau of Nat. Healthcare Insurance, Taiwan****
Univ. of Tokyo, Japan*

Generalized Lloyd Algorithm(GLA) is the most famous known algorithm
technique in the field of vector quantizer design. It runs very fast, but it
can only find a poor local optimum in most cases. In 1989, Zeger
proposed the Stochastic Relaxation Decoder(SRD) algorithm toovercome the weakness of the GLA. We proposed an improved
approach named Codebook Reorganization Algorithm(CRA). It can findbetter codebooks than GLA. It also can find a codebook as good as
SRD in less time.
DESp - 11L

An Image Rotation Method for OLED Panel
Y. Kobayashi, A. Satoh
Kyocera Display Inst., Japan

Image rotation method is necessary to display a landscape-type picture
on a portrait-type panel. And the image rotation requires some
additional memory for work area. We have implemented image rotation
hardware with using the rim of frame buffer. This Image rotation method
requires no additional memory and enables displaying NTSC image on
portrait-type OLED panel.

208

Friday

December 8
Friday, December 8

8:50 - 9:00

Ohmi 10Opening
Opening Remarks
8:50
H. Okumura, Toshiba, Japan
9:00 - 10:20

Ohmi 10

DES1: Circuit Technique for High Quality Image
Chair:
Co-Chair:
DES1 - 1:
9:00

K. Sekiya, Tohoku Univ., Japan
Y. Kudo, Hitachi, Japan
Invited Interface Technologies for Flat Panel Display
T. Kim, H. Nam
Samsung Elect., Korea

Various interface technologies are investigated to connect two different
systems electrically to communicate each other. For digital display
devices, specifically FPDs, two interface schemes of intra-panel
interface and system interface have existed according to the physicallocation of interface system. This paper provides summaries of existing
interface technologies and technical trends of new advanced interface
schemes up to date.
DES1 - 2
9:20

Programmable Gamma Voltage Generator for Mobile
Display Applications
M.-S. Shin, J.-Y. Song, C.-D. Go, O.-K. Kwon
Hanyang Univ., Korea

In this paper, a 6-bit source driver with programmable gamma voltages
is proposed for mobile display applications. The gamma voltages of thesource driver can be adjusted by the 12-bit data register that isprogrammed by the serial interface of I2C and the tuning range of 9reference voltages is ±315mV with 5mV step. Because 9 output buffers
are only used in the source driver for 240/720 output channels, the chipsize of the proposed source driver is smaller to 20% and power
consumption is lower to 35% than those of the conventional source
driver which has an output buffer per channel.

209

Friday
DES1 - 3
9:40

December 8
One-Chip Driver for 262K-Color QCIF+ Passive Matrix
OLED Displays
Y.-S. Son, Y.-S. Ahn, H.-S. Song, J.-K. Sung, H.-S. Oh,
D.-K. Han, H.-S. Kim*, G.-H. Cho**
Silicon Works, Korea*LG Elect., Korea**
KAIST, Korea

A single-chip driver for 262K-Color QCIF+ (176RGB × 240) passive
matrix OLED displays is presented. The chip consists of a scan driver, adata driver, a digital controller, 3(R/G/B) reference current generators,
and two interface circuits. The gray level is controlled by pulse widthmodulation of data currents. Gradient in pre-charge levels between datalines is applied to remove the effect of scan line resistance. 120Hz of
the frame frequency is applied to reduce the flickering.
DES1 - 4
10:00

A Memory-Efficient Model-Based Overdrive
H. Pan, X. Feng, S. Daly
Sharp Labs. of America, USA

We propose a novel model-based overdrive (OD) algorithm with frame
buffer compression. Our proposed algorithm adds a model to predict
the actual display values to increase overdrive accuracy. Then we areable to reduce the implementation cost of our proposed model-based
OD algorithms to the level of conventional OD algorithms. In addition,
we use an adaptive BTC to reduce the required frame buffer to further
lower the implementation cost. The algorithm is evaluated with nine
video sequences with satisfactory results.
----- Break -----

10:40 - 12:00

Ohmi 10

DES2: Video Processing for High Quality Image
Chair:
Co-Chair:
DES2 - 1:
10:40

J. Someya, Mitsubishi Elec., Japan
H. Sasaki, Toshiba Semiconductor, Japan
Invited High Frame Rate Picture Rate Conversion
E. B. Bellers, J. G. W. Janssen
NXP Semiconductors, USA

Motion blur is one of the major concerns of today’s LCD panels. The
hold-time is the dominating factor in the motion blur. Driving the panel at
a higher refresh rate reduces the hold time, and as such, provides ameans to reduce the motion blur. This paper shows the technology thatcan drive the panel with the proper video content by applying highframe-rate motion-compensated temporal interpolation, and illustrates
the architecture that enables implementation at a consumer price level.

210

Friday
DES2 - 2
11:00

December 8
A Novel LCD System for High Quality Motion
Pictures by Motion-Adaptive Black-Insertion-Ratio
Control
M. Baba, G. ItohToshiba, Japan

In this paper, a novel LCD system for high quality motion pictures by
motion-adaptive black-insertion-ratio control is proposed. In thissystem, a driving method of an LCD is switched between a pseudoimpulse driving method like a CRT and a hold-type driving method like a
conventional LCD according to input pictures. This LCD system allows
the realization of novel LCD-TVs which have the features of both highquality motion pictures and flicker-free still pictures without excessive
power consumption.
DES2 - 3
11:20

Video Processing for Optimal Motion Portrayal on
LCDs
F. H. van Heesch, M. A. Klompenhouwer, E. B. Bellers*,
J. G. W. Janssen*
Philips Res. Labs., The Netherlands*NXP Semiconductors, USA

For an optimal motion portrayal of video on Liquid Crystal Displays(LCDs), motion artifacts like blur and judder have to be prevented. In
this paper, an overview of several motion blur reduction methods ispresented and motion judder reduction is discussed. Furthermore, acost effective video processing system for LCDs is proposed for optimal
motion portrayal.
DES2 - 4
11:40

A Color Conversion Circuit of Wide Gamut ColorSpaces for Multi-Primary Color LCDs
H. Moriya, K. Murai, K. Fukasawa, T. Kurumisawa*,
E. Chino*
Seiko Epson, Japan*
Sanyo Epson Imaging Devices, Japan

A color conversion circuit that reproduces sYCC, AdobeRGB andxvYCC601 color spaces is presented. The proposed circuit converts theencoded signals of sYCC, AdobeRGB and xvYCC601 with their control
commands. The circuit is independent of the optical characteristics of
LCDs and can be applied to various types of wide color-gamut LCDs.
Experimental results show that the proposed circuit and our newly
developed four-primary color LCD can reproduce the outside of sRGB
color space for the above three encoding methods.
----- Lunch -----

211

Friday

December 8

14:00 - 15:00

Ohmi 10

DES3: High Quality Display Technology
Chair:
Co-Chair:
DES3 - 1:
14:00

H. Okumura, Toshiba R&D Center, Japan
K. Sekiya, Tohoku Univ., Japan
Invited Dual-Modulation High Dynamic Range Display
Technology
H. Seetzen*’**, G. Ward*, L. Whitehead***
BrightSide Tech., Canada**Univ. of British Columbia, Canada

Dual Modulation High Dynamic Range displays offer a number ofadvantages over conventional single modulation displays. We describe
the basic design principles and the benefits of dual modulation displays
such as higher contrast, larger color gamut, higher luminance andpower savings.
DES3 - 2:
14:20

Invited Advances in Field Sequential Color OCB-LCD
with Backlight Scanning Technology
H. Seki*’**, S. Ichikawa*, Y. Hamakubo*, H. Ishigami*,
H. Yaginuma*, T. Kishimoto*, S. Nakano*, K. Wako*,
K. Sekiya*, Y. Kitago***, H. Ishibashi***, A. Yoshizawa****,
T. Araki*****, M. Chiba*****, T. Okayama*****,
K. Yokoyama*****, H. Murai*****, A. Yamamura*****,
K. Käläntär******, T. Ishinabe*******, T. Miyashita*******,
T. Uchida********
Core-Lab., Aomori Pref. CREATE JST, Japan**
Hachinohe Inst. of Tech., Japan***Andes Elec., Japan****
Hirosaki Univ., Japan*****Aomori Ind. Res. Ctr., Japan******Nippon Leiz, Japan*******
Tohoku Univ., Japan

Field sequential color method on an LCD in combination with an LED
backlight has an advantage in light efficiency but has a disadvantage of
motion artifact called color breakup. The method is based on temporalcolor mixing and therefore, color separation between color fields isessential on scanning backlights. We developed prototypes of OCBmode LCDs with LED scanning backlights and successfully provided
the solutions to the problems.
DES3 - 3
14:40

212

WithdrawnFriday
DES3 - 4L
14:40

December 8
A Development of Frame Rate Conversion
Technology for Large-Screen Full-Spec. LCD-HDTV
Y. Yoshida, T. Fujine, K. Yamamoto, H. Furukawa,
M. Ueno, Y. Kikuchi, S. Kohashikawa, A. Yamada,N. Takeda, M. Sugino
Sharp, JapanWe describe our development of Frame Rate Conversion(FRC)
technology that provides picture quality improvement for LCD. Based on
an analysis of real broadcasting video, we point out that the “charactertelop” is a special type of input signal that is considered to be able toobtain a significant picture quality improvement by using double-frame
rate LCD-TV. Then, FRC technology that has a feature of improving a
picture quality of “character-telop” in particular, as well as a LSI
implementing FRC is introduced.
----- Break -----

15:40 - 17:00

Ohmi 10

DES4: Mobile Optimized System
Chair:
Co-Chair:
DES4 - 1:
15:40

N. Suzuki, Nokia JapanO. K. Kwon, Hanyang Univ., Korea
Invited High Speed Serial Interface for Mobile
Displays
R. LawrenceIntel, USA

For handheld products, reducing pincount and power are highest
priority. These requirements are shaping a new generation of interfaces
in cell phones, PDAs, and other battery-powered products. To avoid
market fragmentation, the MIPI Alliance developed standardized
interfaces between components in mobile devices. The Display Working
Group developed the MIPI DSI standard for the interface between aprocessor and its displays. DSI specifies high-speed differential
signaling technology for the physical layer, and a packet-based protocol
for sending pixel or command data.
DES4 - 2:
16:00

Invited Incorporation of Input Function into Display
Using LTPS TFT Technology
H. Nakamura, T. NishibeToshiba Matsushita Display Tech., JapanThe advancement of Low-Temperature polycrystalline silicon (LTPS)
TFT-LCDs has been driven by the evolution of system-on-glass (SOG)
technology. Poly-Si TFT performance has been improved in order toachieve higher value-added displays which circuits with various
functions are integrated onto the glass substrate. In this paper, recent
development of SOG is briefly described focusing on device
technologies of function-integrated displays such as touch panel
function using poly-Si photo-sensors.
213

Friday

December 8

DES4 - 3:
16:20

Invited Development of SLS Mobile TFT-LCDs
C. W. Kim, K. C. Park
Samsung Elect., Korea

A 1.02” full SOG TFT-LCD with icon-display for subdisplay of cellular
phones, 2.2” qVGA TFT-LCD of high-aperture ratio with integrated DC/
DC converter, 1.9” qVGA TFT-LCD with low power analog interface, and3.0” VGA TFT-LCD compatible with 480-interlaced data format without
additional signal processing are introduced. All these devices aredeveloped based on the SLS(Single crystal-Like Silicon) technology.
DES4 - 4:
16:40

Invited The Dynamic Display Power Optimization(D2PO) Driving Scheme Enables Low Power TFT-LCD
Modules for Notebook Applications
H. Maeda, T. Hashimoto, A. Okazaki, M. Watanabe,
A. Bhowmik
Toshiba Matsushita Display Tech., Japan*Intel, USA

Toshiba Matsushita Display Technology Co., Ltd. (TMD) developed
prototype TFT LCD module with a unique interface scheme to improve
power consumption in portable, battery powered notebook applications.
The solution utilizes a multi-field driving method (MFD), and includes
TMD’s new LCD display control electronics matched to the next
generation Intel® Centrino® Duo mobile technology-based platform.
The technology is named Dynamic Display Power Optimization(D2PO).

Author Interviews
17:00 – 18:00
Sponsor:Technical Group on Consumer Electronics, ITE

IDW ’07
The 14th International Display Workshops
December 5-7, 2007
Sapporo, Japan214

IDW ’06 COMMITTEESORGANIZING COMMITTEE
General Chair:
Standing (ITE):
Standing (SID):

Y. ShimodairaT. ItoP. M. Heyman
T. Shinoda
Committee (ITE):
T. Kurita
Committee (Executive Chair): K. Nunomura
Committee (Program Chair): Y. Iimura

Shizuoka Univ.
NHK
Fujitsu Labs./Univ. of Tokyo
NHK
PioneerTokyo Univ. of A&T

OVERSEAS ADVISORS
P. BosP. M. Heyman
M.-K. Han
W. E. Howard
J. Jang
H.-S. Kwok
A. C. Lowe
E. Lueder
F.-C. LuoM. H. Oh
J.-N. Perbet
I. Sage
D. Theis
H. Tolner
B. P. Wang
L. F. Weber
K.-W. Whang

Kent State Univ., USAUSA
Seoul Nat. Univ., Korea
Howard Consulting, USA
Kyung Hee Univ., Korea
Hong Kong Univ. of S&T, Hong Kong
Lambent Consultancy, UK
Univ. of Stuttgart, USA
AU Optronics, Taiwan
Dankook Univ., Korea
Thales Avionics, France
QinetiQ, UK
Siemens AG, Germany
PDP Consultant, The Netherlands
Southeast Univ., China
USA
Seoul Nat. Univ., Korea

FINANCIAL SUPPORTING COMMITTEE
Chair:
Vice-Chair:

S. Mikoshiba
Y. Shimodaira

Univ. of Electro-Commun.
Shizuoka Univ.

EXECUTIVE COMMITTEE
Executive Chair:
Executive Vice-Chair:

K. Nunomura
K. BetsuiT. Shiga
Program Chair:
Y. Iimura
Program Vice-Chair:
T. Miyashita
M. Uchidoi
Program Secretary:
K. HaraY. Yamamoto
S. Uchikoga
N. Wakita
Publication Chair:
M. DatePublication Vice-Chair: M. Suzuki
Publication:
N. Miura
T. Taguchi
Treasurer Chair:
M. SekiTreasurer:
M. Hasegawa
General Secretary:
T. Suzuki
Local Arrangement Chair: I. Fujieda
Local Arrangement:
H. Kaneko
T. ItoY. Gotoh
Exhibition Chair:
M. Kimura
Exhibition Vice-Chair:
H. Tanaka
Exhibition:
I. Tsuda

Pioneer
Fujitsu Hitachi Plasma Display
Univ. of Electro-Commun.
Tokyo Univ. of A&T
Tohoku Univ.
Pioneer
Shizuoka Univ.
Sharp
ToshibaMatsushita Elec. Ind.
NTT
Merck
Meiji Univ.
Toppan Printing
NHK
IBM Res.
ZEON
Ritsumeikan Univ.
Mitsubishi Elec.
Nippon Elec. Glass
Kyoto Univ.
Ryukoku Univ.
Matsushita Elec. Ind.
Horiba215

M. Sakamoto
Senior Executive Member: H. Uchiike
T. Sugiura
S. Naemura
Committee:
LCT WS
AMD WS
FMC WS
CRT WSPDP WSPH WS
FED WS
OLED WS
3D WS
VHF WS
LAD WSEP WS
MEMS WS
DES TS
Members

H. Fujikake
K. Takatori
H. Mori
M. Shirai
R. Ogawa
T. Hisamune
N. Egami
S. Naka
S. YanoT. Tamura
M. Takaso
H. Arisawa
T. Komoda
K. Sekiya
H. Arai
K. Dantani
K. Fukuoka
H. Fukuro
Y. Hirai
H. HoriS. Hoshino
S. Hotta
N. Ibaraki
H. Inoue
M. Inoue
Y. Ishii
T. ItohS. Itoh
S. Kakita
S. Kaneko
M. KanoH. Kawakami
K. Kobayashi
S. Kobayashi
H. Kobayashi
M. Koden
Y. Komiya
S. Kurozumi
M. Maeda
K. Matsuhiro
A. Mikami
S. Mikoshiba
H. Mimura
H. Mori
H. Murakami
Y. Nagae
T. Nagatsuka
K. Nakazawa
Y. Nishimura
K. Niwa
H. Ohnishi

216

Sharp
Merck
NHK
NEC LCD Tech.
Fuji Film
Hitachi Displays
Fujitsu Hitachi Plasma Display
Kasei Optonix
NHK
Toyama Univ.
NHK
Tokyo Polytech. Univ.
Techno Syss. Res.
Fuji Xerox
Matsushita Elec. Works
Aomori Support Center for
Industrial Promotion CREATE
Dai Nippon Printing
Idemitsu Kosan
Nissan Chem. Ind.
Optrex
Konica Minolta Sensing
Matsushita Elec. Ind.
Toshiba Matsushita
Display Tech.
Hitachi High-Tech.
Toyo
Sharp
Corning Japan
FutabaKasei Optonix
NEC
Alps Elec.
Hitachi Displays
Mitsubishi Elec.
Tokyo Univ. of Sci. Yamaguchi
Tokushima Bunri Univ.
Sharp
Olympus Optical
FUTEC
Arisawa Manufacturing
Kanazawa Inst. of Tech.
Univ. of Electro-Commun.
Shizuoka Univ.
Fuji Film
Dai Nippon Printing
Hitachi Displays
Nitto Denko
NTT
AKT
JSR
Ehime Univ.

T. Ohnishi
M. Ohsawa
S. Okabayashi
S. Okuda
M. OnoT. Saito
H. Saito
S. Sakamoto
A. Sasaki
F. SatoH. SekiK. Shibata
T. Shinoda
S. Shiwa
M. Sumitomo
T. Sunata
K. Suzuki
K. Takeuchi
Y. Takeuchi
Y. Takiguchi
C. Tani
Y. Toko
Y. Tsuchiya
M. Tsumura
T. Uchida
K. Uchikawa
S. UemuraY. Ukai
T. Ushiki
S. Yamamoto
Y. Yanagi
H. Yokoyama
M. Yokozawa
M. YukiSumitomo Chem.
Hitachi
Meijyo Univ.
Mitsubishi Elec.
Nanao
Tokyo Cathode Lab.
ChissoNoritake Kizai
Osaka Electro-Commun. Univ.
NHK
Hachinohe Inst. of Tech.
Sanyo Elec.
Fujitsu Labs.
Tokyo Denki Univ.
Nichia Chem. Ind.
Philips Mobile Display
Systems Kobe
SED
Dainippon Ink & Chem.
ICMR
Ricoh
ASTRODESIGN
Stanley Elec.
NHK
Future Vision
Tohoku Univ.
Tokyo Ohka Kogyo
NoritakeSony
Seiko Epson
Seiko Instrs.
Mitsubishi Heavy Ind.
Nat. Inst. of Advanced Ind.
S&T
Tokyo Univ. of Info. Sci.
Asahi Glass

Workshop/Topical Session Chair:
LCT WS
AMD WS
FMC WS
CRT WSPDP WSPH WS
FED WS
OLED WS
3D WS
VHF WS
LAD WSEP WS
MEMS WS
DES TS

H. SekiY. Yamamoto
Y. Iimura
H.-Y. Chen
K. Nunomura
Y. Nakanishi
M. TakaiY. SatoI. Yuyama
H. IsonoZ. Tajima
M. Omodani
M. Nakamoto
H. Okumura

Hachinohe Inst. of Tech.
Sharp
Tokyo Univ. of A&T
Chunghwa Picture Tubes
Pioneer
Shizuoka Univ.
Osaka Univ.
JST
Utsunomiya Univ.
Nippon Inst. Tech.
Hitachi Displays
Tokai Univ.
Shizuoka Univ.
Toshiba

PROGRAM COMMITTEE
Program Chair:
Program Vice-Chair:
Program Secretary:

Y. IimuraT. Miyashita
M. Uchidoi
K. HaraY. Yamamoto
S. Uchikoga

Tokyo Univ. of A&T
Tohoku Univ.
Pioneer
Shizuoka Univ.
Sharp
Toshiba217

Committee:
LCT WS
AMD WS
FMC WS
CRT WSPDP WSPH WS
FED WS
OLED WS
3D WS
VHF WS
LAD WSEP WS
MEMS WS
DES TS

N. Wakita

Matsushita Elec. Ind.

M. OzakiS. Utsunomiya
T. Nagahara
T. Saito
N. Oota
S. Okamoto
H. Mimura
T. Inoue
M. Tsuchida
T. Kurita
T. Hayashi
A. Suzuki
S. Uchikoga
H. Okumura

Osaka Univ.
Seiko Epson
AZ Elec. Materials
Tokyo Cathode Lab.
DAP Tech.
NHK
Shizuoka Univ.
TDK
NTT Data
NHK
3M Asia PacificRicoh
Toshiba
Toshiba

Workshop on LC Science and Technologies
Workshop Chair:
Program Chair:
Program Vice-Chair:
General Secretary:
Exhibition Committee:
Program Committee:

H. SekiM. Ozaki
M. Suzuki
S. Komura
H. Fujikake
E. Tajima
H. Okada
A. Mochizuki
O. Okumura
M. Kimura
K. Miyachi
K. Ishikawa
T. NoseR. Yamaguchi
M. Kimura
S. Saito
M. Inoue
M. Funahashi

Hachinohe Inst. of Tech.
Osaka Univ.
Merck
Hitachi Displays
NHK
Citizen Displays
Toyama Univ.
Nano Loa
Sanyo Epson Imaging Devices
JSR
Sharp
Tokyo Inst. of Tech.
Akita Pref. Univ.
Akita Univ.
Nagaoka Univ. of Tech.
ChissoToyoNat. Inst. of Advanced Ind.
S&T

Workshop on Active Matrix Displays
Workshop Chair:
Program Chair:
Executive Committee:
Program Vice-Chair/
Exhibition Committee:
Program Committee:

Y. Yamamoto
S. Utsunomiya
K. Takatori

Sharp
Seiko Epson
NEC LCD Tech.

M. Kimura
T. Asano
K. Azuma
M. Ikeda
Y. Inoue
M. Inoue
M. Tsumura
H. HamadaS. Horita
N. Matsuo
T. Noguchi

Ryukoku Univ.
Kyushu Univ.
ALTEDEC
Toshiba Res. ConsultingNHK
TPO Displays Japan
Future Vision
Sanyo Elec.
JAIST
Univ. of Hyogo
Univ. of Ryukyus

Workshop on FPD Materials and Components
Workshop Chair:
Y. Iimura
Program Chair:
T. Nagahara
General Secretary:
H. MoriVice-General Secretary: K. Niwa
218

Tokyo Univ. of A&T
AZ Elec. Materials
Fuji Film
JSR

Exhibition Committee:
Program Committee:

T. Unate
Sekisui Chem.
Y. Fujimoto
Dainippon Screen MFG
Y. Dantani
Dai Nippon Printing
K. Uchikawa
Tokyo Ohka Kogyo
T. ItohCorning JapanI. UkaiSony
Y. Fujimura
Nitto Denko
T. Tomono
Toppan Printing
T. Hayashi
3M Asia PacificF. Shimo
Tokyo Electron
K. Shimamura
Mitsui Eng. & Shipbuiding
N. Miyatake
Mitsui Eng. & Shipbuiding
K. Käläntär
Nippon Leiz
M. Shinohara
Omron
A. A. S. Sluyterman Philips
J.-S. Yu
LG Chem
C.-C. LeeITRI
S. Asari
Ulvac
M. Kimura
JSR
K. Miyazawa
ChissoSenior Executive Member: K. Matsushima
ChissoH. Saito
ChissoWorkshop on CRTs
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

H.-Y. Chen
T. Saito
S. Shirai
S. Okuda
T. Sugawara
Y. WadaH. Nakanishi
J. Henrichs
C. H. Yeh
S. LeeK. D. Ha

Chunghwa Picture Tubes
Tokyo Cathode Lab.
Hitachi Displays
Mitsubishi Elec.
Asahi Glass
Matsushita Toshiba
Picture Display
LG.Philips Displays
Chunghwa Picture Tubes
LG.Philips Displays
Samsung SDI

Workshop on Plasma Displays
Workshop Chair:
Program Chair:
General Secretary:
Exhibition Committee:
Program Committee:

K. Nunomura
N. Oota
H. Kajiyama
R. Murai
T. Shinoda
H. Oaku
Y. Nakao
S. Mikoshiba
K. Igarashi
M. Uchidoi
Y. Murakami
S. Sakamoto
Y. Hashimoto

Pioneer
DAP Tech.
Univ. of Tokyo
Matsushita Elec. Ind.
Fujitsu Lab./Univ. of Tokyo
Hitachi
Asahi Glass
Univ. of Electro-Commun.
Univ. of Electro-Commun.
PioneerNHK
Noritake Kizai
HitachiWorkshop on EL Displays, LEDs and Phosphors
Workshop Chair:
Program Chair:
General Secretary/
Exhibition Committee:
Program Committee:

Y. Nakanishi
S. Okamoto

Shizuoka Univ.
NHK

T. Hisamune
H. Kobayashi
H. Yamamoto
T. Minami

Kasei Optonix
Tokushima Bunri Univ.
Tokyo Univ. of Tech.
Kanazawa Inst. of Tech.
219

S. Itoh
K. OhnoK. OhmiM. Katayama
M. Sumitomo
M. Tamatani
N. Miura
M. Shiiki
M. Niboshi
K. Wani
K. Kondo

FutabaSony
Tottori Univ.
Denso
NichiaToshiba Res. Consulting
Meiji Univ.
HitachiSharp
iFire Tech.
Stanley Elec.

Workshop on Field Emission Display
Workshop Chair:
Program Chair:
General Secretary/
Exhibition Committee:
Program Committee:

M. Takai
H. Mimura

Osaka Univ.
Shizuoka Univ.

N. Egami
J. Ishikawa
T. Asano
M. Nakamoto
Y. Iguchi
S. Okuda
M. Suzuki
S. Uemura
J.-M. Kim

NHK
Kyoto Univ.
Kyusyu Inst. of Tech.
Shizuoka Univ.
Sony EMCS
Mitsubishi Elec.
Hitachi
Noritake
Samsung SDI

Workshop on Organic LED Displays
Workshop Chair:
Program Chair:
General Secretary/
Exhibition Committee:
Program Committee:

Y. SatoT. InoueJST
TDKS. Naka
C. Adachi
Y. Fukuda
K. Fukuoka
R. Hattori
J. KidoY. Kijima
A. Mikami
S. Miyashita
H. Miyazaki
S. Tokito
T. Tsutsui
T. Wakimoto

Toyama Univ.
Kyushu Univ.
Pioneer
Idemitsu Kosan
Kyushu Univ.
Yamagata Univ.
SONY
Kanazawa Inst. of Tech.
Seiko Epson
Nippon Steel Chem.
NHK
Kyushu Univ.
OptrexWorkshop on 3D/Hyper-Realistic Displays and Systems
Workshop Chair:
Program Chair:
General Secretary:
Exhibition Committee:
Program Committee:

I. Yuyama
M. Hashimoto
S. YanoK. Mashitani
Y. Komiya
T. Fujii
W.-J. Hsueh
T. Mishina
N. Nishida
S. Ohtsuka
J.-Y. Son
H. Takemura
T. Yoshida

Utsunomiya Univ.
NTT Data
NHK
Sanyo Elec.
Olympus
Nagoya Univ.
ITRI
NICT
Univ. of Tokushima
NTT Data
Hanyang Univ.
Osaka Univ.
Toppan Printing

Workshop on Applied Vision and Human Factors
Workshop Chair:
220

H. Isono

Nippon Inst. of Tech.

Workshop Vice-Chair:
Program Chair:
General Secretary/
Exhibition Committee:
Program Committee:

Y. Shimodaira
T. Kurita

Shizuoka Univ.
NHK

T. TamuraJ. Bergquist
S. Clippingdale
N. Hiruma
M. Idesawa
S. Kubota
T. Mitsuhashi
T. WakeR. Yoshitake

Tokyo Polytech. Univ.
Nokia JapanNHK
NHK
Univ. of Elecro-Commun.
Seikei Univ.
Shobi Univ.
Chukyo Univ.
IBM Japan

Workshop on Projection and Large-Area Displays,
and Their Components
Workshop Chair:
Program Chair:
Program Vice-Chair:
General Secretary:
Exhibition Committee:
Program Committee:

Z. Tajima
T. Hayashi
H. Kikuchi
S. Shikama
M. Takaso
H. Nakano
Y. Hayashi
S. Koike
Y. Kondo
M. Masutomi
T. Ogura
K. Ohara
S. OuchiK. Fukushima
K. Takeda
K. Terada
Y. Asakura
Y. Masumoto

Hitachi Displays
3M Asia PacificNHK
Mitsubishi Elec.
Techno Syss. Res.
Barco
Sony
Seiko Epson
Matsushita Elec. Works
Toppan Printing
Matsushita Elec. Ind.
Texas Instrs. Japan
Hitachi
Ushio Elec.
Seiko Epson
Sanyo Elec.
Nittoh Kogaku
Matsushita Elec. Ind.

Workshop on Electronic Paper
Workshop Chair:
Program Chair:
General Secretary:
Exhibition Committee:
Program Committee:

M. Omodani
A. Suzuki
H. Arisawa
Y. TokoS. Maeda
Y. Hotta
T. Fujisawa
H. Kawai
K. Kitamura
G. F. Zhou

Tokai Univ.
Ricoh
Fuji Xerox
Stanley Elec.
Oji Paper
Ricoh
Dainippon Ink & Chem.
Seiko Epson
Chiba Univ.
Philips Res. Labs.

Workshop on MEMS for Future Displays
and Related Electron Devices
Workshop Chair/
Exhibition Committee:
Program Chair:
General Secretary:
Program Committee:

M. Nakamoto
S. Uchikoga
H. Fujita
T. Komoda
M. Esashi
S. Sugiyama
G. Hashiguchi
H. Kikuchi
Y. Yoshida
K. Matsumoto
T. Ooasa

Shizuoka Univ.
Toshiba
Univ. of Tokyo
Matsushita Elec. Works
Tohoku Univ.
Ritsumeikan Univ.
Kagawa Univ.
NHK
Mitsubishi Elec.
OlympusTokyo Electron221

H. L. Tuller
G. Barbastathis
T. Akinwande
W. I. Milne
J. Jang
J. M. Kim

MIT
MIT
MIT
Cambridge Univ.
Kyung Hee Univ.
Samsung

Topical Session on Display Electronic Systems
Session Chair:
Program Chair:
General Secretary:
Program Committee:

H. Okumura
H. Okumura
K. Sekiya

Toshiba
Toshiba
Aomori Support Center for
Industrial Promotion CREATE
K. Käläntär
Nippon Leiz
J. Someya
Mitsubishi Elec. Ind.
N. Suzuki
Nokia JapanT. Yamamoto
NHK
K. Takeuchi
Univ. of Elecro-Commun.
O.-K. Kwon
Hanyang Univ.
H.-S. Koo
Ming-Hsing Univ.
of S&T
Y. KudoHitachi
M. A. Klompenhouwer Philips Res. Labs.
H. Sasaki
Toshiba

FINANCIAL SUPPORTING ORGANIZATIONS(as of October 31, 2006)
ADEKA CORPORATION
AKT, Inc.
Chisso Corporation
CHUGAIRO CO., LTD.
CITIZEN WATCH CO., LTD.
Corning Japan K.K.
Dai Nippon Printing Co., Ltd.
Dainippon Ink and Chemicals, Incorporated
FUJI FILM Corporation
FUJITSU LIMITED
Futaba Corporation
HARISON TOSHIBA LIGHTING Corp.
Hitachi Displays, Ltd.
JAPAN BROADCASTING CORPORATIONJSR Corporation
KASEI OPTONIX. LTD.
Matsushita Electric Industrial Co., Ltd.
Merck Ltd. Japan
MITSUBISHI ELECTRIC CORPORATION
NEC LCD Technologies, Ltd.
Nichia Corporation
Nippon Electric Glass Co., Ltd.
Nippon Steel Chemical Co., Ltd.
NISSAN CHEMICAL INDUSTRIES, LTD.
NITTO DENKO CORPORATIONNORITAKE ITRON CORPORATIONOTSUKA ELECTRONICS CO., LTD.
PIONEER CORPORATION
Seiko Instruments Inc.
SED inc.
SEMI
Semiconductor Energy Laboratory Co., Ltd.
222

Sharp Corporation
Sony Corporation
Sumitomo Chemical Co., Ltd. Tsukuba Research Laboratory
Technology Research Association for Advanced Display Materials(TRADIM)TOKYO CATHODE LABORATORY CO., LTD.
TOKYO ELECTRON LTD.
TOKYO OHKA KOGYO CO., LTD.
TOPPAN PRINTING CO., LTD.
Toshiba Matsushita Display Technology Co., Ltd.
TOYO Corporation
TPO Displays Japan K.K.
Ube Material Industries, Ltd.
ULVAC, Inc.
ZEON CORPORATION

IDW ’06 SECRETARIAT
c/o ABEISM CORPORATION
4-30-12 Kamimeguro, Meguro-ku
Tokyo 153-8571, Japan

LIST OF EXHIBITORS (as of October 31, 2006)
CHUO PRECISION INDUSTRIAL CO., LTD.
CYBERNET SYSTEMS CO. LTD.
Fujieda Lab., Ritsumeikan University
HORIBA, Ltd.
International Test & Engineering Services Co., Ltd.
Jedat Inc.
Keisoku Giken Co., Ltd.
Kitamura Lab., Chiba University
Kudo Lab., Chiba University
MATSUBO Corporation
Matsumura Lab., Japan advanced Institute of Science and Technology
MEIRYO TECHNICA CORPORATION
Nippon Electric Glass Co., Ltd.
Okada Lab., University of Toyama
OLED-T Ltd.
Omodani Lab., TOKAI University
OPTO SCIENCE, INC.
OPTODESIGN, INC.
Otani Lab., Tokyo University of A&T
OTSUKA ELECTRONICS CO., LTD.
Rsoft Design Group JAPAN K.K.
Ryukoku Extension Center/Mutsu Lab./Aoi Lab., Ryukoku University
Sanai System Co., Ltd.
Saito Lab., Nagoya University
SHIMADZU CORPORATION
Shimodaira Lab., Shizuoka University
SHINTECH, INC.
SILVAKO Japan Co., Ltd.
Suzuki Lab., TOKAI University
TIPs Lab., The University of Tokushima
Toray Research Center, Inc.
TOYO Corporation
University of Hyogo
223

IDW Tutorial in Japanese
Tuesday, December 5
Ohmi 10 (2F)
Otsu Prince Hotel
Detail information will be available in October:
http://www.sidchapters.org/japan/wiki.cgi
Contact address:
idw.tutorial@tmdisplay.com

Euro Display ’07
September 17–20, 2007
Moscow, Russia
224

FLOOR PLAN

1F
Shakunage 1
Cloakroom

Eizansumire 1
Secretariat
Shakunage 2
Eizansumire 2

Registration

Lakeside

Conference
Hall
Entrance

Convenience
Shop

Bus Stop
Hotel
Entrance

2F
Exhibition, Poster andAuthor Interviews

Ohmi
1

Ohmi Ohmi
2
3

Ohmi 5-7

Ohmi Ohmi Ohmi
8
9
10

Hira
Lakeside
LAkeside

Ibuki
Hiei

Seta
Ryuo
225

3F
Keynote andInvited Addresses

Outstanding
Poster Paper
Awards Ceremony
andOtsu Festival

Lobby

Prince Hall

BanquetDec. 6 19:10-21:10

Hakodate
SuzukaIshiyama

226

IDW ’06 TimetableandOtsu Festival
Friday, December 8
12:10–13:50
Prince Hall (3F)
Otsu Prince Hotel

Prince Hall (3F)

Ohmi 1

Ohmi 2

LCT1
13:20-14:30

AMD1
13:00-14:25

LCT2
15:00-16:25

AMD2
14:40-16:15

LCT3
16:40-18:05

AMD3
16:25-18:00

Ohmi 3

Ohmi 8

Ohmi 9Ohmi 10EP1
13:20-14:45

OLED1
13:20-14:50

EP2
15:00-16:15

OLED2
15:05-16:35

Registration
8:30-18:00

Lunch
FMC1
PDP1
13:20-14:20 13:20-14:40
Break
FMC2
PDP2
15:00-16:00 15:00-16:20
Break
FMC3
16:40-18:00

Banquet19:10-21:10
LCT4
9:00-10:20

AMD4/
OLED4
9:00-10:25

VHF1
9:00-10:20

LCT5
10:40-12:10

AMD5
10:40-12:00

VHF2
10:40-12:05

LCT6
13:50-15:20
LCT7
15:40-17:05

FMC4
9:00-10:20

PH1
9:00-10:15

MEMS1
9:00-10:35

FMC5
10:40-12:20

PH2
10:40-12:55

MEMS2
10:45-13:05

Thursday, December 7

Registration
8:30-18:00

3D1
14:00-15:20

Lunch
VHF3
CRT1
13:40-15:20 14:00-15:00
Break

FMC6
14:00-15:20

MEMS3
14:00-15:30

3D2
15:40-16:55

VHF4
15:40-17:00

CRT2
15:40-17:00

PH3
15:40-16:40

MEMS4
15:40-17:10

Break
VHF5
CRT3
17:20-18:35 17:20-18:40

PH4
16:55-18:15

MEMS5
17:20-18:45

Posters
CRTp,
PDPp1,
OLEDp, 3Dp,
LADp, EPp,
DESp
9:00-12:00
Posters
AMDp,
AMD/OLEDp,
FMCp,
PDPp2
14:00-17:00

Exhibition
9:00-18:00

Author Interviews
18:40-19:40

Friday, December 8

December 5-7, 2007
Sapporo, Japan

Exhibition
12:00-18:00

OLED3
16:50-18:00

Break

The 14th International Display Workshops

Posters
LCTp, PHp,
VHFp
13:20-16:20

Author Interviews
18:00-19:00

See page 9 for details

IDW ’07

Ohmi 5-7

Opening, Keynote,
Invited Add.
9:00-11:20
Wednesday, December 6

Outstanding Poster Paper
Awards Ceremony

Date

Registration
8:30-15:00

3D3
9:00-10:30

AMD6
9:00-10:25

3D4
10:30-11:40

AMD7
10:40-11:40

Poster Awards
Ceremony/
Otsu Festival
12:10-13:50

FMC7
LAD1
9:00-10:20
9:00-10:20
Break
FMC8
PDP3
10:40-11:40 10:40-12:00

FED1
9:00-10:15

DES1
8:50-10:20

FED2/PH5
10:30-11:40

DES2
10:40-12:00

FED3
13:15-15:15

DES3
14:00-15:00

FED4
15:30-17:00

DES4
15:40-17:00

Exhibition
9:00-14:00

Lunch
LAD2
14:00-15:30

AMD8
14:00-15:25

LAD3
15:40-17:00

AMD9
15:35-17:00

FMC9
PDP4
14:00-14:40 14:00-15:20
Break
PDP5
15:40-17:00

Author Interviews
17:00-18:00

IDW ’06 Session Navigator
Location

Keynote &InviteLCT

Prince Hall
Ohmi 1

9:00-11:20

AMD

18:00-19:00

New Materials

LC Alignment (1) LC Alignment (2)PostersFMC

TFT Novel
Applications

LC-TV

SOG/Mobile

LCD Modes (1)LCD Modes (2)*AM-OLED

Emerging TFT
Tech.

Manufacturing
Tech. (1)

TFT Tech. (2)Organic TFT (1)Backlight (1)Backlight (2)Backlight (3)Organic TFT (2)A.I.

Materials
A.I.

Posters
Future CRT
Tech. & Market

Cathode & Mask

A.I.

A.I.

Electron Gun
A.I.

Posters
Protective Layer(1)

Protective Layer(2)

Driving Method

Ohmi5-7

FED

TFT Tech. (1)Manufacturing
Tech. (2)Ohmi 8

A.I.

Posters
ELDs

Ohmi 9Ohmi5-7

17:00-18:00

A.I.

Posters

Ohmi5-7

PH

PM

Characterization

Optical Films (1) Optical Films (2)Ohmi 8

Ohmi 8AM

A.I.

Ohmi 9PDP

LCD Modes (3)A.I.
Color Filters

Ohmi5-7

CRT

18:40-19:40

A.I.

Ohmi5-7
Ohmi 3PM

AM

Opening, Keynote& Invite Add.

Ohmi5-7
Ohmi 2

Friday, Dec. 8

Thursday, Dec. 7

Wednesday, Dec. 6
PM

Fabrication

PDP TV

Posters
Phosphors for
PDPs

LEDs

A.I.
*Phosph. for FED& FEA Backlight

Phosphors

A.I.

A.I.

Posters

FEDs & Novel
DevicesOhmi 9*Phosph. for FED& FEA Backlight

CNT-FEs for
FEDs

FED Driving &FE Materials

Ohmi5-7
Ohmi 10

OLED

A.I.
OLED
Technology

DeviceTechnology

Phosphores.
OLED*AM-OLED

Ohmi 2
A.I.

Ohmi5-7

Posters*Posters

A.I.
Hyper Realistic Disp.
& Human Factor

Ohmi 1

3D

Ohmi 2
Ohmi5-7

VHF

Image Quality

Moving Image
Quality (1)Posters
Human Factors

Ohmi 3
Ohmi5-7

3D Display (1)Holographic &Advan. Disp.

Color
Reproduction

3D Display (2)

A.I.

A.I.

Moving Image
Quality (2)A.I.

Posters

Emerging
Illumination

Ohmi 1

LAD

Projection
Components

Ohmi 8
Ohmi5-7EP

Ohmi 9Posters
Electronic Paper
(1)

A.I.

Electronic Paper(2)

Ohmi5-7

MEMS

Ohmi 10

A.I.

Posters
Emerging
MEMS Tech.

Optical MEMS &Sensors

Mech., Mater. &Process Tech.

Displays &Imaging (1)Displays &Imaging (2)Ohmi5-7

DES

Dig. Cinema &Home Theater

A.I.
CircuitTechnologies.

Ohmi 10
Ohmi5-7

LCT: Workshop on LC Science & Technologies
AMD: Workshop on Active Matrix Displays
FMC: Workshop on FPD Manufacturing, Materials & Components
CRT: Workshop on CRTs
PDP: Workshop on Plasma Displays
PH: Workshop on EL Displays, LEDs, & Phosphors
FED: Workshop on Field Emission Display
OLED: Workshop on Organic LED Displays

Video
Processing

Mobile System
A.I.

Posters

3D: Workshop on 3D/Hyper-Realistic Displays & Systems
VHF: Workshop on Applied Vision & Human Factors
LAD: Wokshop on Projection & Large-Area Displays, & Their Components
EP: Workshop on Electronic Paper
MEMS:Workshop on MEMS for Future Displays & Related Electron Devices
DES:Topical Session on Display Electronic Systems

High Quality
Display Tech.

A.I.: Author Interviews*: Joint Session

IDW ’06
FINAL PROGRAM

IDW ’06 Secretariat:
c/o ABEISM CORPORATION
4-30-12 Kamimeguro, Meguro-ku
Tokyo 153-8571, Japan