http://www.idw.ne.jp/

IDW/AD ’12
FINAL PROGRAM

IDW/AD ’12 Secretariat:
c/o Bilingual Group Ltd.
3-3-6 Kudan Minami, Chiyoda-ku,
Tokyo 102-0074, Japan
Phone：+81-3-3263-1345
FAX：+81-3-3263-1264
E-mail：idw@idw.ne.jp

IDW/AD’12

The 19th International Display Workshops
in conjunction with Asia Display 2012

Final Program

Kyoto International Conference Center
Kyoto, Japan
December 4(Tue) – 7(Fri), 2012

CONTENTS
Program Highlights ................................................................................ 7
General Information ............................................................................. 12
Travel Information ................................................................................ 15
Plenary Sessions
Tuesday, December 4
IDW/AD ’12 Opening ........................................................................... 19
IDW/AD ’12 Keynote Addresses .......................................................... 19
Special Topics of Interest on Oxide TFT
Tuesday, December 4
FMC1 Manufacturing Technologies (1) .............................................. 21
Wednesday, December 5
AMD3 Oxide TFT: Materials & Devices.............................................. 22
AMD4 Oxide TFT: Applications .......................................................... 23
FMCp Poster : FPD Manufacturing, Materials & Components ........... 24
FLXp Poster : Flexible Display Technologies ..................................... 25
AMD5 Oxide TFT: Solution Process .................................................. 25
FLX3 Flexible Oxide TFTs ................................................................ 27
Thursday, December 6
AMDp1 Poster : Oxide TFT................................................................... 28
AMD7 Oxide TFT: Reliability .............................................................. 31
AMD8/FLX7 Oxide TFT: Flexible Displays .......................................... 32
Special Topics of Interest on Augmented Reality
Wednesday, December 5
DESp1 Poster : Display Electronic Systems (AR) ................................ 34
Thursday, December 6
VHF6 Wide-Angle and Head-Up Display Human Factors ................. 34
3D6
Digital Museum of Kyoto Gion Festival ................................... 35
DES5 Recent Advances in Augmented Reality Applications ............ 37
INP6 AR Interactive Systems........................................................... 38
Special Topics of Interest on Lighting Technologies
Wednesday, December 5
FMCp FPD Manufacturing, Materials & Components ....................... 40
Thursday, December 6
PH4
Phosphors Late News ............................................................. 42
OLEDp Poster : OLED Technologies .................................................... 43

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Friday, December 7
OLED3 OLED for Lighting Application ................................................. 44
FMC9 LED Lighting Technologies ..................................................... 45
PHp
Poster : Phosphors .................................................................. 46
PRJ4 Solid State Lighting ................................................................. 47
PH3
Phosphors for Lighting ............................................................ 48
Workshop on LC Science and Technologies
Tuesday, December 4
LCTp1 Poster : LC Alignment .............................................................. 50
LCTp2 Poster : LC Evaluation ............................................................. 53
LCTp3 Poster : Display Mode.............................................................. 54
LCTp4 Poster : LC Application ............................................................ 57
Wednesday, December 5
LCT1 LC Semiconductors and Display Modes ................................. 58
LCT2 New Functional LC Devices .................................................... 59
LCT3 Blue Phase ............................................................................. 61
LCT4 Wide Viewing Angle and Fast Switching ................................. 62
Friday, December 7
LCT5 Emerging Display Mode .......................................................... 63
LCT6 Photo Alignment ..................................................................... 64
LCT7 LC Alignment Technology ....................................................... 66
Workshop on Active Matrix Displays
Tuesday, December 4
AMD1 Organic & Carbon TFT............................................................ 68
FLX1/AMD2 Flexible Active Matrix Devices........................................ 69
Wednesday, December 5
AMD3 Oxide TFT: Materials & Devices.............................................. 70
AMD4 Oxide TFT: Applications .......................................................... 71
AMD5 Oxide TFT: Solution Process .................................................. 73
INP3/AMD6 Touch Panel (2) ............................................................... 74
Thursday, December 6
AMDp1 Poster : Oxide TFT................................................................... 75
AMDp2 Poster : Active-Matrix Devices ................................................. 78
AMD7 Oxide TFT: Reliability .............................................................. 82
AMD8/FLX7 Oxide TFT: Flexible Displays .......................................... 84
Friday, December 7
AMD9 Active-Matrix Circuits .............................................................. 85

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Workshop on FPD Manufacturing, Materials and Components
Tuesday, December 4
FMC1 Manufacturing Technologies (1) .............................................. 87
FMC2 Manufacturing Technologies (2) .............................................. 88
Wednesday, December 5
FMCp Poster : FPD Manufacturing, Materials & Components ........... 89
FMC3 Materials (1) ............................................................................ 96
FMC4 Materials (2) ............................................................................ 97
Thursday, December 6
FLX5/FMC5 Flexible Materials and Fabrication Processes ................ 98
FMC6 Materials (3) ............................................................................ 99
FMC7 Backlight ............................................................................... 100
Friday, December 7
FMC8 Manufacturing Technologies (3) ............................................ 101
FMC9 LED Lighting Technologies ................................................... 102
Workshop on Plasma Displays
Wednesday, December 5
PDPp Poster : PDP .......................................................................... 104
Thursday, December 6
PDP1 Driving................................................................................... 105
PDP2 Ultra HDTV ........................................................................... 106
PDP3 Protective Layer .................................................................... 107
Workshop on EL Displays and Phosphors
Thursday, December 6
PH4
Phosphors Late News ........................................................... 109
PH1
Phosphors in EL ................................................................... 110
PH2
Phosphors in General ........................................................... 111
Friday, December 7
PHp
Poster : Phosphors ................................................................ 112
PH3
Phosphors for Lighting .......................................................... 117
Workshop on Field Emission Display and CRT
Friday, December 7
Opening ............................................................................................. 119
FED1 CNT Emitters & Applications ................................................ 119
FED2 Applications & New Materials ............................................... 120
FED3 Fabrication Processes .......................................................... 121
FED4 Fundamental Mechanisms.................................................... 123

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Workshop on OLED Displays and Related Technologies
Thursday, December 6
OLED1 Keynote and Future Trend.................................................... 124
OLED2 Micro OLED Display ............................................................ 124
OLEDp Poster : OLED Technologies ................................................. 126
Friday, December 7
OLED3 OLED for Lighting Application .............................................. 130
OLED4 Materials and Devices ......................................................... 132
OLED5 Display Technologies (1) ...................................................... 133
OLED6 Display Technologies (2) ...................................................... 134
Workshop on 3D/Hyper-Realistic Displays and Systems
Tuesday, December 4
3D1
Ray-Space Analysis .............................................................. 136
3D2
Holography............................................................................ 137
Wednesday, December 5
3D3/VHF3 3D Crosstalk Evaluation ................................................. 138
3D4/VHF4 3D Image Quality (1)....................................................... 139
VHF5/3D5 3D Image Quality (2)....................................................... 140
Thursday, December 6
3D6
Digital Museum of Kyoto Gion Festival ................................. 141
3Dp
Poster : 3D/Hyper-Realistic Displays and Systems ............... 143
Friday, December 7
3D7
Novel 3D Approach ............................................................... 151
3D8
Device and Approach for 3D Display .................................... 152
3D9Ray-Based Realistic 3D Display ........................................... 153
3D10 Quality Evaluation ................................................................. 154
Workshop on Applied Vision and Human Factors
Tuesday, December 4
VHF1 Color (1) ................................................................................ 155
DES2/VHF2 Color (2) ....................................................................... 156
Wednesday, December 5
3D3/VHF3 3D Crosstalk Evaluation ................................................. 157
3D4/VHF4 3D Image Quality (1)....................................................... 158
VHF5/3D5 3D Image Quality (2)....................................................... 159
Thursday, December 6
VHF6 Wide-Angle and Head-Up Display Human Factors ............... 160
VHFp Poster : Applied Vision and Human Factors .......................... 161

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Friday, December 7
VHF7 Human Factors and Visual Cognition.................................... 164
VHF8 Image Format and Ergonomic Design of HD/UHDTV .......... 165
VHF9 Display Measurement ........................................................... 167
Workshop on Projection and Large-Area Displays
and Their C omponents
Thursday, December 6
PRJ1 High Reality .......................................................................... 169
PRJp Short Presentation & Poster : Projection and Optics ............. 170
Friday, December 7
PRJ2 Vehicle Displays .................................................................... 172
PRJ3 Components ......................................................................... 174
PRJ4 Solid State Lighting ............................................................... 175
Workshop on Electronic Paper
Tuesday, December 4
EP1
Electrophoretic Displays ....................................................... 177
EP2
Reflective Displays and Evaluations ..................................... 178
Wednesday, December 5
EP3Electrochromic Displays and Others (1) ............................... 179
EP4Electrochromic Displays and Others (2) ............................... 180
EPp
Short Presentation & Poster : Electronic Paper ..................... 180
Workshop on MEMS and Emerging Technologies
for Future Displays and Devices
Thursday, December 6
Opening ............................................................................................. 185
MEET1 MEMS Imaging and Sensing ............................................... 185
MEET2 Fundamental Components and Process Technologies ....... 186
MEET3 Emerging Technologies ....................................................... 187
MEET4 Display and Imaging ............................................................ 188
Workshop on Display Electronic Systems
Tuesday, December 4
Opening ............................................................................................. 190
DES1 SUPER Hi-VISION Public Viewing........................................ 190
DES2/VHF2 Color (2) ....................................................................... 191
Wednesday, December 5
DES3 Low Power Consumption ...................................................... 192
DES4 Display Electronic Systems ................................................... 193
DESp1 Short Presentation & Poster : Display Electronic Systems (AR) ... 193
DESp2 Short Presentation & Poster : Display Electronic Systems ........... 193
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Thursday, December 6
DES5 Recent Advances in Augmented Reality Applications .......... 194
Workshop on Flexible Displays
Tuesday, December 4
Opening ............................................................................................. 196
FLX1/AMD2 Flexible Active Matrix Devices...................................... 196
Wednesday, December 5
FLXp Poster : Flexible Display Technologies ................................... 197
FLX2 Organic TFTs and Related Materials .................................... 199
FLX3 Flexible Oxide TFTs .............................................................. 200
Thursday, December 6
FLX4 Materials and Evaluation for Flexible Devices ...................... 202
FLX5/FMC5 Flexible Materials and Fabrication Processes .............. 203
FLX6 Fabrication for Flexible Devices ............................................ 204
AMD8/FLX7 Oxide TFT: Flexible Displays ........................................ 205
Workshop on Touch Panels and Input Technologies
Tuesday, December 4
INPp Poster : Touch Panels & Input Technologies .......................... 207
Wednesday, December 5
INP1 Interaction ............................................................................. 209
INP2 Touch Panel (1) ..................................................................... 210
INP3/AMD6 Touch Panel (2) ............................................................. 211
Thursday, December 6
INP4 3D/2D Imaging Systems (1).................................................. 212
INP5 3D/2D Imaging Systems (2).................................................. 213
INP6 AR Interactive Systems......................................................... 214
IDW/AD ’12 Committees .................................................................... 216
Floor Map .......................................................................................... 225
IDW/AD ’12 Timetable .................................................................Pullout
IDW/AD ’12 Special Topics of Interest Navigator .........................Pullout
IDW/AD ’12 Session Navigator ....................................................Pullout

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PROGRAM HIGHLIGHTS
The 19th International Display Workshops in conjunction with Asia
Display 2012 will be held as IDW/AD ’12 for encouraging aggressive
research and development of display technologies throughout the worldand especially in the Asian region. IDW/AD ’12 focuses on the following
three special topics, which are extremely timely, as well as fifteen active
workshops.
Special Topics of Interest on• Oxide TFT• Augmented Reality• Lighting Technologies
Workshops on• LC Science and Technologies• Active Matrix Displays• FPD Manufacturing, Materials and Components• Plasma Displays• EL Displays and Phosphors• Field Emission Display and CRT• OLED Displays and Related Technologies• 3D/Hyper-Realistic Displays and Systems• Applied Vision and Human Factors• Projection and Large-Area Displays and Their Components• Electronic Paper• MEMS and Emerging Technologies for Future Displays
and Devices• Display Electronic Systems• Flexible Displays• Touch Panels and Input Technologies
The four-day conference will feature 552 papers, including four keynote
addresses, 114 invited papers and 434 regular papers including 226
poster presentations. Following plenary session of keynote addresses in
the Tuesday morning, presentations will begin and continue in 7 parallel
oral sessions through Friday. Poster sessions and author interviews withdemonstrations will enable participants to discuss topics in detail. IDW/
AD ’12 will also present “IDW Best Paper Award” and “IDW Outstanding
Poster Paper Award” based on paper originality and technical significanceto information displays. Exhibits by universities and display industryrelated businesses will also be featured from Tuesday to Friday in parallelwith workshops. IDW/AD ’12 should be of interest to not only researchersand engineers, but also managers of companies and institutions in thedisplay community.

Special Topics of Interest on Oxide TFT

Oxide TFTs have a long history going back for almost a half century, butthey have been intensively investigated since the first demonstration of
amorphous oxide TFTs in 2004, and have now become one of the hottest
topics in backplane technologies for active-matrix FPDs. We are glad tosee and touch the first commercial LCD products using the oxide TFTs
this year, however, there still remain many technical issues for further
evolution toward higher resolution, speed, and reliability, lower fabrication
temperature, and broader applications. In IDW/AD ’12, the latest
achievements involved in the brand-new challenges to these issues will
be found in the papers marked Special Topics “Oxide TFT” in workshops
for AMD, FMC, OLED, EP, FLX and their joint sessions. Neither should
you miss the brilliant invited talks given by world-leading researchers inoxide TFTs such as Prof. T. Kamiya (Tokyo Inst. of Tech.), Prof. M. Furuta(Kochi Univ. of Tech.), Prof. K. Kobayashi (Shizuoka Univ.), Prof. K. Yasui
7

(Nagaoka Univ. of Tech.), Prof. H. J. Kim (Yonsei Univ.), Dr. J. Steiger(Evonik), Dr. S. Jeon and Dr. J. S. Park (SAIT), Dr. N. Gong (LG Display),
Dr. C.-H. Chen (AU Optronics), Dr. K. Teramoto (Sony) and Dr. H.
Yamaguchi (Toshiba).

Special Topics of Interest on Augmented Reality (AR)In recent years, augmented reality applications have been making
substantial progress with high-performance display devices and tracking
methods. In the session organized by the Applied Vision and Human
Factors Workshop, four papers on wide-angle and head-up display
human factors are presented, including an invited talk on ultra-realistic
dome images. In the session organized by the 3D/Hyper-Realistic
Displays and Systems Workshop, there will be a presentation on the
recent activities of archiving and virtually reproducing the Yamahoko
Parade at the Kyoto Gion Festival, which has been registered on the listof the “Intangible Cultural Heritage of Humanity” by UNESCO. In thesession organized by the Display Electronic Systems Workshop,
activities in the industrial community toward commercialization of AR
systems are first presented, followed by presentations on recent trends
in visual tracking methods for AR. Regarding the AR topics related to the
Touch Panels and Input Technologies Workshop, we highlight one
presentation by Dr. Iseki. He will review the existing technologies for datacollection and analysis during a surgery at a distance. He will thendiscuss the roles of user interface technologies envisioned fortelemedicine in the future. The sessions are organized by the 3D, VHF,
DES and INP workshops.

Special Topics of Interest on Lighting Technologies (LIT)This Lighting Technologies of Special Topics of Interest will cover all
aspects of science and technologies of lighting including LED lighting,
OLED lighting, flexible lighting, manufacturing of lightings, lighting
materials, device structures for lightings and internal or external efficiency
enhancement technologies.

Workshop on LC Science and Technologies (LCT)This workshop covers topics from fundamental studies to recent
developments in LCD technologies and LC materials. New LCD
technologies, such as blue phase LCDs, 3D-LCDs, polymer stabilized
LCDs and photo-alignment LCDs are extensively discussed. Novelsemiconductor LCs and special novel LCD evaluation techniques arealso discussed.

Workshop on Active Matrix Displays (AMD)The AMD workshop has devoted itself to the exchange of the scientificand technological knowledge for FPD applications, covering the various
technologies of Si-TFT, Oxide TFT, Organic TFT, OLED integrated
sensors, flexible devices and novel applications. AMD is recognized as
one of the largest workshops in IDW. Recent paper presentations tend to
focus on Oxide TFTs, which may be expected to play a role in theapplications for higher-definition LCD, next-generation OLED and flexible
displays. This year, we highlight the oxide TFT as a special topic ofinterest (STI). We devote three sessions to the oxide-TFT STI, three
sessions to AMD alone, and three sessions for joint sessions, which
cover a wide area from device/process to applications. The presentations
also promise to achieve green and sustainable technologies.

Workshop on FPD Manufacturing, Materials and Components(FMC)
The FMC workshop covers the recent developments and achievementsin the field of flat panel display technologies in manufacturing, materials,
measurements and components. This year, three sessions are devoted
to special topics of interests, Lighting and Oxide TFT, showing recent
8trends. The joint session with the FLX workshop deals with the new
manufacturing technologies including Roll to Roll fabrication technologies,
etc. More than 50 interesting papers including 12 invited papers will bepresented. The presentations are on organic semiconductors, color
switching of one dimensional photonic crystals, transparent nanofiber
papers, transparent conductive films with Ag nanowires and organicinorganic hybrid materials, etc.

Workshop on Plasma Displays (PDP)
Presentations on SUPER Hi-VISION (Ultra High Definition Television)
should not be missed. A debut of the 145-in.-diagonal, 8Kx4K-pixel
plasma display has been made jointly by NHK and Panasonic, with abreathtakingly high picture quality. The system was installed at theInternational Broadcasting Center in London Olympic Park. The outlineof SUPER Hi-VISION will be presented at the DES Workshop. Also
stressed is an announcement of the world first introduction into themarket of the (MgCa)O protective layer, which may replace the commonlyused MgO with a significant reduction of sustain voltage.

Workshop on EL Displays and Phosphors (PH)This workshop presents the latest achievements on devices andphosphors for emissive displays, general lighting and liquid-crystal
backlighting. Invited talks will present emerging technologies such as
efficient powder EL, luminance enhancement with nano particle plasmon,and new phosphor materials for white LED applications and emissive
displays.

Workshop on Field Emission Display and CRT (FED)
Field emission display (FED) is a vacuum device similar to the cathoderay tube (CRT) and is one of most promising flat panel displays because
of several features such as high picture quality, low power consumption
and fast response time. This workshop covers the entire field of CRT andfield emission display technologies. Recent progress in carbon nanotube(CNT) field emitter arrays for X-ray sources and displays are presented.
New devices with field emission, such as X-ray image detectors andswitching devices are also presented. Furthermore, fabrication
processes, field emission characteristics and various field emittermaterials, such as CNTs, TiO2, and porous silicon, are also discussed.

Workshop on OLED Displays and Related Technologies(OLED)The OLED workshop covers all aspects of science and technologies of
OLED and other organic devices, ranging from material research, basic
device physics to display including backplane technologies and otherapplications. OLED technologies based on new full-color realizing
methods are reported on, and technologies from micro display viewer tolarge size TV application. Material and device architecture for higher
quantum efficiencies, supporting these device technologies are alsopresented. In addition, organic transistors for one of the optimal
backplane technologies with OLEDs are also discussed.

Workshop on 3D/Hyper-Realistic Displays and Systems (3D)This workshop focuses on recent progress in 3D, hyper-realistic display
systems and related visual sciences. It covers acquisition, processing,2D/3D conversion, two-view display, multi-view display, holography, newoptical components, crosstalk, measurement, perception, standardizationand so on for 3D/ hyper-reality display technologies. Invited talks in thisworkshop include topics from the forefront of 3D imaging technologies
and recent research into advanced display systems such as multi-view
9display, holography, and liquid crystal lens.

Workshop on Applied Vision and Human Factors (VHF)
The VHF workshop covers all topics on vision, human factors and image
quality relating to information display. The oral sessions and a poster
session, include lively discussions on the latest topics ranging fromfundamental theories to applications. This year, in addition to a session
on the special topic of interest in augmented reality (VHF/AR session),
there are eight oral sessions and a poster session, on color reproduction,
3D vision, human factors, image formats and ergonomic design of
HDTV/UHDTV displays, and display measurement. Six distinguishedinvited talks will be given on the latest topics in ultra-realistic dome
images, color differences for images, color rendering properties ofartificial illuminants, guidelines for in-vehicle displays, the SUPER HiVISION (SHV) image format and its standardization, and ergonomic
design guidelines for flat panel displays.

Workshop on Projection and Large-Area Displays and Their
Components (PRJ)
PRJ-WS covers all Projection technologies, devices and related
applications. Ongoing Laser and High Reality technologies havecontributed to the progress of Projectors. Papers on HUD (Head Up
Display) and other displays for Automotive and Aircraft are going to bepresented. Also, continuous improvements in the field of Solid State
Lighting and display devices will be discussed.

Workshop on Electronic Paper (EP)This workshop focuses on current topics in electronic paper including
rewritable paper, paper-like displays and flexible displays. Developmentsof e-Paper technologies are now in great demand due to the emergenceof applications such as the e-Book, e-Newspaper, Electronic shelf label,etc. Various novel technologies in electrophoretic, liquid crystal,electrowetting, electrochromic and twisting ball display systems will bereported. Challenging new approaches in e-Paper technologies will also
be reported. Enthusiastic discussion is expected about systems, devices,materials, human factors, color evaluations and applications in thisfield.

Workshop on MEMS and Emerging Technologies for Future
Displays and Devices (MEET)
The workshop is unique in covering all aspects of MEMS,
nanotechnologies and emerging technologies concerning future
displays, imaging devices, and emerging electron devices. It seeks tobroaden the horizons of display and imaging technologies into cuttingedge technologies. Research areas such as materials, basic physics
and fabrication process are included. Among all the MEMS and display
conferences in the world, this is the only opportunity for MEMS andcutting-edge technology researchers to gather and discuss such devices.
Authorities in this field are invited from top research institutions aroundthe world. Invited speakers are from Univ. of Cambridge, Univ. of
Stuttgart, Ecole Polytechnique, Kyung Hee Univ., Univ. of Oxford, Nat.
Chiao Tung Univ. and Ritsumeikan Univ. Together with excellent
contributed papers, this workshop invites participants who wish to open
a new field of displays, imaging devices and emerging devices.

Workshop on Display Electronic Systems (DES)This workshop covers all aspects of display systems in relation toelectronics of video data processing, interface technologies, cooperative
operations between display components such as cells and backlights,
sensors, applications to the new arena such as 3D video and augmented10reality. We set up a new session, the SUPER Hi-VISION Public Viewing
at the London 2012 Olympic Games. In addition, the wide and highdynamic range of color reproduction systems and low power consumption
systems are focused on.

Workshop on Flexible Displays (FLX)
Recently, flexible display technologies are drawing much attention, andthey are spread over a wide range of fields from materials science topractical applications. The hottest sessions cover all aspects of flexible
device/material technologies including OLED, electronic paper, TFT
fabrication, substrate, printing/roll-to-roll processes and evaluation.

Workshop on Touch Panels and Input Technologies (INP)
This workshop covers all aspects of input technologies on materials,
devices and systems. We expect that INP will open up brand new fields
by fusing the input and display technologies. In addition to the recent
developments in the touch panel technologies, new user interface
technologies and as well the most advanced 3D/2D image sensor
technologies and systems are featured in this year’s session.

IDW Best Paper Award and IDW Outstanding Poster Paper
Award
IDW will present “IDW Best Paper Award” and “IDW Outstanding Poster
Paper Award”. The award committee of IDW will select the mostoutstanding papers from those presented at IDW/AD ’12. The award
winners will be announced on the IDW website and given a plaque after
the conference.

Exhibition
The IDW/AD ’12 Exhibition, which will be held from December 4 throughDecember 7, covers materials, components, manufacturing andmeasuring equipments, software systems and other related products
for display devices. Please join in and enjoy discussions at exhibitors’
booths (1F, Event Hall).
December 4: 12:40 – 18:20
December 5: 10:00 – 18:00
December 6: 10:00 – 18:00
December 7: 10:00 – 14:00

Evening Get-Together
with Wine
Monday, December 3, 2012
18:00 – 20:00
at Restaurant “The Grill” (1F),
Kyoto International Conference Center(Sponsored by Merck Ltd., Japan)
See page 12 for details
11

GENERAL INFORMATIONSPONSORSHIP

IDW/AD ’12 is sponsored by the Institute of Image Information andTelevision Engineers (ITE) and the Society for Information Display(SID).

CONFERENCE SITE

Kyoto International Conference Center
Takaragaike, Sakyo-ku,
Kyoto 606-0001
Phone: +81-75-705-1234 Fax: +81-75-705-1100

ON-SITE SECRETARIAT

Telephone and fax machines for IDW/AD ’12 use will be temporarily set
up in the secretariat room (Room G) at the Kyoto International ConferenceCenter (December 3-7). Phone/Fax: +81-75-705-2001

RECEPTION

A buffet style reception will be held on December 5 from 19:00 to 21:00
at the Sakura (1F) in the Kyoto International Conference Center. As thenumber of tickets is limited, you are urged to make an advancereservation through the registration website.

EVENING GET-TOGETHER WITH WINE

A get-together will be held on December 3 from 18:00 to 20:00 at
Restaurant Grill (1F) in the conference site. Wine (Sponsored by Merck
Ltd. Japan) will be served to participants with a relaxed atmosphere for
networking.

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REGISTRATION

Registration is available in advance and also on-site. However, on-site
registrants may not be able to obtain books, if there are an unexpectedly
large number of on-site registrations. Advance registration is strongly
recommended.

Registration Fees

The registration fee for IDW/AD ’12 includes admission to the conference and CD-ROM of the proceedings. Additional ¥10,000 will becharged for those who prefer the proceedings in book format. Detailed
information will be announced on the website.
Paid by Nov. 2
After Nov. 2
Individual Member¥ 35,000¥ 45,000(ITE/SID/ASO*)
Non-Member**¥ 45,000¥ 55,000
Student***¥ 8,000¥ 10,000
Life Member of ITE/SID¥ 8,000¥ 10,000
Reception¥ 8,000¥ 10,000*ASO: Academic Supporting Organizations(See p.14 as well as “Supporting Organizations and Sponsors” at theend of each workshop section.)**Non-Member: If you intend to join either ITE or SID, the one year
membership fee will be subsidized by IDW/AD ’12 committee.
***Photocopy of student ID is required.
Please note that the reduced registration fee must be paid by November 2. The full fee will be charged for payments made later than November 2. Also note that the number of reception tickets to register on site
is limited.

Proceedings Data at the Conference Site

We will provide the data on USB flash drives for copying near the registration desk. This data can also be accessed from the web-server via thewireless network only in the Free Wi-Fi Area at the conference site.
12

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For additional sets of the proceedings (Books and CD-ROM)
At the conference site
¥ 11,000
Airmail after the conference¥ 18,000
Domestic mail after the conference¥ 13,000
Additional sets of Books and CD-ROM can be purchased only those whohave completed payment by November 23.

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Payment

Three ways are provided for registration.

ACA(1) e-Registration

Access the following URL.
http://www.idw.ne.jp/regist.html
e-Registration will be accepted until November 23, 2012.

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Complete the registration form (download from the website) and send it
to the secretariat together with all necessary payments no later thanNovember 23, 2012.
IDW/AD ’12 Secretariat
c/o Bilingual Group Ltd.
3-3-6 Kudan Minami, Chiyoda-ku, Tokyo 102-0074, Japan
Phone: +81-3-3263-1345 Fax: +81-3-3263-1264
E-mail: idw@idw.ne.jp
The registration fee should be remitted by one of the following methods.
1. Credit Card
2. Bank Transfer to:
Bank:
Bank of Tokyo-Mitsubishi UFJ(Swift Code: BOTKJPJT)
Branch:Ichigaya Branch (Branch No. 14)
Account No.: 1474095 (Ordinary Account)
Account:
IDW
Please attach a copy of the bank receipt with the registration form to
avoid any confusion. Please note that the remittance charge shouldbe paid by the payer.
All above payments should be made in JAPANESE YEN.
Also, please note that personal and traveler’s checks are not accepted.

(3) On-site Registration

the

year

ememsitestratheConference registration desk will be open:
December 3 (Mon.)
17:00 – 20:00
December 4 (Tue.)
8:00 – 18:00
December 5 (Wed.)
8:00 – 18:00
December 6 (Thu.)
8:00 – 18:00
December 7 (Fri.)
8:00 – 13:00
The on-site registration fee will be payable by:
1. Cash (JAPANESE YEN only)
2. Credit Card (VISA, MasterCard or Amex)
Bank transfer, bank checks, or personal/traveler’s checks are notaccepted.

Cancellation Policy

Refunds for registration, reception, additional sets of proceedings etc.
will be made upon receipt by IDW/AD ’12 secretariat of written cancellation by November 2. For cancellations received after November 2 orno-shows, refunds will not be made. However, after IDW/AD ’12 closes,
a set of the proceedings will be sent to the registrants who have paid theregistration fees. If it becomes difficult to hold IDW/AD ’12 due toinfectious disease and other unavoidable factors, we will substitute the
IDW with the mail delivery of the IDW/AD ’12 proceedings at a later dateto all those who have registered and completed payment.
13

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INQUIRIES

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IDW/AD ’12 Secretariat
c/o Bilingual Group Ltd.
3-3-6 Kudan Minami, Chiyoda-ku, Tokyo 102-0074, Japan
Phone:+81-3-3263-1345 Fax: +81-3-3263-1264
E-mail: idw@idw.ne.jp

ACC

ACADEMIC SUPPORTING ORGANIZATIONS (ASO)

It wi
the p
adva

• The Chemical Society of Japan• The Electrochemical Society of Japan• The Illuminating Engineering Institute of Japan• The Imaging Society of Japan• The Institute of Electrical Engineers of Japan• The Institute of Electronics, Information and Communication
Engineers• The Institute of Image Electronics Engineers of Japan• Japan Ergonomics Society• The Japanese Liquid Crystal Society• The Japan Society of Applied Physics• The Virtual Reality Society of Japan• The Society of Polymer Science, Japan

ods.

FUNDS

• Grant-in-Aid for Scientific Research (KAKENHI: 2464002) from MEXT
• The Asahi Glass Foundation• The Telecommunications Advancement Foundation

m to
ould

For final updated information, please visit our website,
http://www.idw.ne.jp/

ted.

SID Display Week 2013
May 19-24, 2013
Vancouver Convention Center
Vancouver, British Columbia, Canada
not

EuroDisplay 2013etc.
ella2 or
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date

September 16-19, 2013
Imperial College London
London, UK
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TRAVEL INFORMATIONK

ACCOMMODATIONSJTB Western Japan, Corp. will handle arrangements for your hotel
reservations.
It will be very hard to book a hotel in Kyoto in December due to it being
the peak tourist season. So we recommend you make reservations inadvance at the hotels recommended by IDW.
Hotel reservations can be made at the IDW official website.
http://www.idw.ne.jp/accommodation.html
Hotel list and the rates are available on the Pullout of this Advance
Program.
JTB Western Japan, Corp.
Communication Division, MICE Center, IDW/AD ’12 Desk
Phone: +81-6-6252-2861
Fax: +81-6-6252-2862
Office Hours: 9:30-17:30 (Weekdays only)
E-mail: westec_op6@west.jtb.jp

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an
Ky
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12
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There will be an on-site travel information desk during the conference
period to handle arrangements for transportations.

VISAS

Visitors from countries whose citizens must have visas should apply to
Japanese consular office or diplomatic mission in their respective
country. For further details, please contact your travel agency or the
local consular office in your country.
Attention: For some countries’ citizens, official documents prepared by
the secretariat will be needed. Please access the IDW official website forapplications.
http://www.idw.ne.jp/visa.html

CLIMATE

The average temperature in Kyoto during the conference should bearound 8°C(46°F) in the daytime and 4°C(39°F) at night.

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EXHIBITION
12:40 – 18:20 Tuesday, Dec. 4, 2012
10:00 – 18:00 Wednesday, Dec. 5, 2012
10:00 – 18:00 Thursday, Dec. 6, 2012
10:00 – 14:00 Friday, Dec. 7, 2012
Event Hall, 1F
Kyoto International Conference Center

Fu
Ky
Ky
Ky

Free admission with your registration name tag
15

Kyoto - Ancient Capital
Kyoto has a population of 1.47 million, and is an ancient city with ahistory spanning over 1200 years. Kyoto served as Japan’s capitaland the emperor’s residence from 794 until 1868.
Kyoto also preserves the beloved properties of its culture as
testimonials of time. This is shown in the ancient temples andshrines built in styles unique to Kyoto, as well as private
residences. Moreover, many festivals, ceremonies and traditional
industries reveal the will of this city to transmit and maintain its
1200-year-old culture.
Kyoto’s history and culture could, without exaggeration, be said tobe the history and culture of Japan itself.
In addition, many tourists from all over Japan visit Kyoto in the fallto view the beautiful colored leaves. When the conference is being
held, the Shimogamo and Kitano Tenmangu Shrines will be thebest places to view the fall colors. Please enjoy the changing
seasons in Japan.
http://www.kyoto.travel/shrines_temples/st_north/

hotel

eing
ns in

ance

Places of Interest
Kiyomizu-dera Temple
This is one of the most famous Buddhist temples. The name,which means “Temple of Pure Water” derives from the fact that
there is a spring in the temple grounds. The expression “to jump
off the stage at Kiyomizu” is the Japanese equivalent of the
English expression “to take the plunge”. Access: Kiyomizudera
can be reached from Kyoto Station by city bus (Kyoto Transportation Bureau) number 100 or 206 (15 minutes, 220 yen). Get off at
Kiyomizu-michi bus stop; from there it is a ten-minute uphill walkto the temple. Opening Hours: 6:00-18:00

ence

ly to
ctive
the

d by
e for

Kinkaku-ji Temple
The name Kinkaku (Golden Pavilion) is derived from the gold leaf
used to decorate the inside and outside of the second and third
stories. It is the most widely-recognized image of Kyoto. Access:Kinkakuji can be accessed from Kyoto Station by direct Kyoto CityBus number 101 or 205 (about 40 minutes, 220 yen). Opening
Hours: 9:00-17:00

d be

Gion
Kyoto’s Gion district is famous for its traditional architecture andentertainment. Located around Shijo Avenue, and it attracts
tourists with its high concentration of traditional wooden machiya
merchant houses. Gion is filled with shops, restaurants andochaya (teahouses), where geiko (Kyoto dialect for geisha) andmaiko (geiko apprentices) entertain. Access: Gion can be reachedby bus from Kyoto Station (about 20 minutes, 220 yen). Take
number 100 and 206 and get off at Gion bus stop. The closest
train stations are Gion Shijo Station on the Keihan Line andKawaramachi Station on the Hankyu Line.
Further information
Kyoto Visitor’s Guide
http://www.kyotoguide.com/
Kyoto Official Travel Guide http://www.kyoto.travel/
Kyoto City Tourism Association http://www.kyoto-magonote.jp/en/
16

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nd

/

Kokusaikaikan

KansaiInternational
Airport (KIX)

Kyoto
StationKeikyu Line
20 min.

Tokyo
Station

Haneda Tokyo
International
Airport (HND)

Shinagawa
StationDomestic Flights
70 min. 30 Flights a day

JR LineFare : ¥3,490
75 min. (Ltd. Exp. HARUKA)

LimousineBus
Fare : ¥1,280
60 min.

SUBWAY Karasuma Line
Fare : ¥280
One day free ticket : ¥600
20 min.

JR Tokaido
Shinkansen
140 min.
(Nozomi)(as of October 30, 2012)

Domestic Flights
80 min. 4 Flights a day

JR Line60 min.
(Narita Exp.)

all
ng
he
ng

Osaka
International
Airport (ITM)

af
rd
s:
ty
ng

5 min.

toKinkakuji Temple

e,
at
mp
he
ra
aat
lk

NaritaInternational
Airport (NRT)

as
nd
te
al
ts

Kyoto International Coference CenteraalAccess to Conference Site
N

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❷ Ky
❸ Ky
❹ Ho
❺ Ka
❻ Ho
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17

❶

N

Kokusaikaikan

Venue:
Kyoto International
Conference Center

Kitayama

t.
ji S
tao
Ki

Matsugasaki

Jingu-marutamachi
Heian Jingu

Karasuma Oike
Nijojo-mae❾

City Hall

❸

❿

⓬
❽❹

❺

Omiya St.

Higashi
HonganjiTempleShichijo St.

Hachijo St.

Gojo
Karasuma St.

Tambaguchi Sta.

Gojo St.

Keage

Kyoto Sta.

❻

Gion
Gion-shijo

Kodaiji Temple

zai Line
Subway To

Kawaramachi

Keihan Line

Shijo Shijo St.

⓫

Sanjo (Keihan)
Higashiyama⓭❼

Kyoto Shiyakusho-mae

Sanjo St.

Karasuma

Hankyu Line❷

NanzenjiTempleNijo Sta.

Nijo

Omiya

75 min. (Ltd. Exp. HARUKA)

Shirakawa St.

Ginkakuji
TempleKawabata St.

Horikawa St.

Senbon St.

Marutamachi

Marutamachi St.

Nishi
honganjiTempleDemachiyanagi
Imadegawa
Kyoto
Imperial
PalaceNijo
CastleOike St.

Kuramaguchi

Higashioji St.

Imadegawa St.

KitaojiKamo River
Kawaramachi St.

Subway Karasuma Line

Kitayama St.

Kinkakuji Temple(as of October 30, 2012)

Hotel Map

Kiyomizu-gojo

Kiyomizu Temple
Shichijo

Yamashina Sta.
JR
SubwayKujo St.

Kujo❶ Grand Prince Hotel Kyoto❷ Kyoto Hotel Okura❸ Kyoto Royal Hotel & Spa❹ Hotel Monterey Kyoto❺ Karasuma Kyoto Hotel❻ Hotel Keihan Kyoto❼ Mitsui Garden Hotel Kyoto Shijo

18

PrivateRailway❽ Mitsui Garden Hotel Kyoto Sanjo❾ Hearton Hotel Kyoto❿ Hotel Gimmond Kyoto⓫ Aranvert Hotel Kyoto⓬ Kyoto Garden Hotel⓭ Via Inn Kyoto Shijomuromachi

TuesdayDecember 4

Plenary Sessions
Tuesday, December 4
9:25 - 9:40

Main Hall

Plenary

Opening
Master of Ceremony: H. Okumura, Executive Chair, Toshiba, Japan
Opening Remarks
9:25
N. Ibaraki, General Chair, AIST, JapanM. Omodani, Program Chair, Tokai Univ., Japan
9:40 - 12:40

Main Hall

Keynote Addresses
Co-Chairs:

M. Omodani, Program Chair, Tokai Univ., Japan
H. Okumura, Executive Chair, Toshiba, Japan

Keynote Address - 1
9:40

Defy Gravity: Beyond Tangible Bits, Toward
Radical Atoms

H. Ishii
MIT Media Lab, USA
Looking back through the history of HCI, we believe that vision-driven
design is critical in fostering quantum leaps, and it complements
needs-driven and technology-driven design by looking beyond currentday limits. I will present my vision-driven research: Tangible Bits andRadical Atoms to seek new guiding principles and concepts to trail
blaze a new realm in interaction design.
Keynote Address - 2
10:20

Steps Toward a Giant Leap in Mixed andAugmented Reality

H. Tamura
Ritsumeikan Univ., Japan
Augmented reality and/or mixed reality (AR/MR) is an attractive
research ﬁeld, where a variety of applications can be expected.
Although steady steps have already been made toward its future
success in technical aspect, the author believes a giant leap and adramatic turn of diffusion in this area. In this invited talk, a historicalprogress and current state of AR/MR technology are overviewed, and apersonal expectation of such a leap is presented from a point of view ofdisplay technology.
----- Break (11:00 - 11:20) -----

19

Tuesday
Co-Chairs:

December 4
N. Ibaraki, General Chair, AIST, Japan
Y. Gotoh, Program Vice-Chair, Kyoto Univ., Japan

Keynote Address - 3
11:20

A Crystal Ball View of Smart TV for 2013
and Beyond

N. Murakami
Former VP of Google & Former President of Google
Japan, Japan
Many people think “Smart TV” is a tangible hardware, but it is not. It isan eco-system which has multi-layer structure. Hardware is just one
layer of its four layers such as Platform, Hardware, Application, andContent from the bottom to the top.
Keynote Address - 4
12:00

How e-Readers and Tablets are Changing
Books, Newspapers and Documents

S. Nordqvist
WAN-IFRA, Germany
The introduction of mobile smart devices; mobiles, tablets, ande-readers, have enabled the next phase of digitalization of the media
industry. In addition to devices and content the importance and effect of
ecosystems are in focus when changing the face of services andproducts from media companies.

20

TuesdayDecember 4

Special Topics of Interest on
Oxide TFT
Tuesday, December 4
14:20 - 15:35

Room B-1

FMC1: Manufacturing Technologies (1)M. Furuta, Kochi Univ. of Tech., Japan
T. Tomono, Toppan Printing, Japan

FMC1 - 1:
14:20

Invited Preparation of Amorphous p-Type InGaZnO4
Films by Codoping of Al and N Atoms
K. Kobayashi, X. Zhang, Y. Kohno, Y. Tomita, Y. Maeda
Shizuoka Univ., Japan

Codoped InGaZnO4 ﬁlms were prepared by sputtering of targets of
InGaZnO4 and AlN in an Ar atmosphere. The hole-conductivity is
conﬁrmed in ﬁlms prepared from the target (7% AlN) at 2 10-2 Torr in
0.3-0.6% O2 atmosphere. The rectiﬁcation characteristic is obtained fora PN junction of InGaZnO4 ﬁlms.
FMC1 - 2:
14:40

Invited Solution-Based Atmospheric Pressure
Deposition Method for Oxide TFTs
M. Furuta, T. Kawaharamura, D. Wang
Kochi Univ. of Tech., Japan

We fabricated a thin-ﬁlm transistor (TFT) with an amorphous InGaZnO(a-IGZO) and aluminum oxide (AlOx) gate dielectric stack that was
deposited by a solution-based atmospheric pressure chemical vapor
deposition (APCVD). Field effect mobility of 4.1 cm2·V-1·s-1 and on/off
current ratio of over 108 was obtained.
FMC1 - 3:
15:00

Invited Zinc Oxide Film Growth Using High-Energy
H2O Generated by a Catalytic Reaction on Pt
Nanoparticles
K. Yasui, H. Miura, H. Nishiyama
Nagaoka Univ. of Tech., Japan

In this paper, a new CVD method of ZnO thin ﬁlms using the reaction
between zimethylzinc (DMZn) and high-energy H2O, the latter isgenerated by the Pt-catalyzed exothermic H2­O2 reaction, is presented.
Using this CVD method, ZnO thin ﬁlms with excellent electrical andoptical properties were grown.

21

Oxide TFT

Chair:
Co-Chair:Tue./Wed.

December 4/5

FMC1 - 4L
15:20

Large Area Sputtered Al2O3 Films for High Mobility
AM-TFT Backplanes on PVD Array System PiVot
55kVi2
A. Kloeppel, J. Liu, E. Scheer
Appl. Materials, Germany

In order to provide increased stability to AM-OLED backplanes using
IGZO we demonstrate the production worthiness of sputtered Al2O3
buffer ﬁlms on Gen 8.5 substrates using rotary targets on PVD arraysystem PiVot. The achieved Al2O3 layer properties and uniformity
underline the advantages of using rotary technology.
Author Interviews and Demonstrations
17:50 – 18:50

Wednesday, December 5
9:00 - 10:30

Room A

AMD3: Oxide TFT: Materials & Devices
Chair:
Co-Chair:

H. J. Kim, Yonsei Univ., Korea
N. Morosawa, Sony, Japan

AMD3 - 1:
9:00

Invited Present Status, Knowledge and Issues of
Oxide S emiconductor Technology
T. Kamiya, K. Nomura, H. Hosono
Tokyo Inst. of Tech., Japan

Oxide semiconductors have been studied very intensively from late ʼ90,
and the ﬁrst commercial product of oxide TFT appeared in this March.
This paper reviews the present status and new applications of oxide
semiconductors with main focus on amorphous oxide semiconductor.
Then, we will discuss clariﬁed knowledges and remaining issues.
AMD3 - 2
9:25

High Performance AOS-Based Offset TFTs for
Kickback Voltage Reduction
M. Mativenga, D. H. Kang, Y. S. Ahn, J. Jang
Kyung Hee Univ., Korea

This paper shows that amorphous-oxide-semiconductor (AOS)-basedthin-ﬁlm transistors (TFTs) with drain- and/or source-offsets perform
much better compared to Si-based offset TFTs in literature. Attributesof AOS-based offset TFTs include improved stability, high on-currents,
independence of threshold-voltage from offset-length, and possibility
for kickback-voltage reduction in active-matrix display applications.

22

Wednesday

December 5

AMD3 - 3
9:45

Effects of Multi-Gates on Performance and Stabilityof Self-Aligned Coplanar a-IGZO TFTs
J. U. Han, D. H. Kang, J. Jang
Kyung Hee Univ., Korea

We studied the effects of multiple gates on the performance andstability of a-IGZO TFTs. The subthreshold region of transfer
characteristics shift to negative gate voltage direction with increasinggate number, and the threshold voltage shift induced by positive gatebias stress decreases with increasing gate number.
AMD3 - 4:
10:05

J. S. Park, H.-S. Kim, T. S. Kim, K. S. Son, J.-B. Seon,
S.-J. Seo, S.-J. Kim, M. Ryu, S. Lee
Samsung Advanced Inst. of Tech., Korea
The fabrication of thin-ﬁlm transistor devices incorporating active
semiconductors based on zinc oxynitride (ZnON) compounds ispresented. Devices with ﬁeld effect mobility values exceeding 50 cm2/Vs
are routinely achieved, which makes them suitable as switching or
driving elements in next generation ﬂat panel displays.
----- Break ----10:50 - 12:20

Room A

AMD4: Oxide TFT: Applications
Chair:
Co-Chair:

H. Yamaguchi, Toshiba, Japan
H. Kumomi, Tokyo Inst. of Tech., Japan

AMD4 - 1:
10:50

Invited Ultra Definition 240 Hz 55-in. LCD TV Driven
by 1G1D with Oxide Semiconductor TFTs & Copper
Signal Lines
N. Gong, C. Park, J. Lee, I. Jeong, H. Han, J. Hwang,
J. Park, U. Chung, K. Park, H. Jeong, Y. Ha, W. Shin,S. YeoLG Display, Korea

We have implemented a 240 Hz 55-in. ultra deﬁnition (UD, or
3840x2160) resolution TV panel using amorphous IGZO TFT. Among
various data driving architectures, the data single 1G1D driving renders
cost beneﬁt, process competitiveness and design ﬂexibility. So wesuggest a-IGZO TFT and copper metallization technology as a solution.

23

Oxide TFT

Invited High Mobility Zinc Oxynitride (ZnON) BasedThin-Film Transistors (TFTs) for Display
Applications

Wednesday
AMD4 - 2:
11:15

December 5

Invited Ultra High-Definition Amorphous-IGZO
Liquid-Crystal Display
B.-L. Yeh, C.-N. Lin, H.-K. Tseng, I.-P. Chien, C.-C. Wu,
C. H. Huang, C.-M. Chang, W.-C. Tsai, C.-H. Chen
AU Optronics, Taiwan

ES type IGZO TFT with different IGZO back channel treatment wasstudied to improve TFT stability. A modiﬁed ES process ﬂow wasdeveloped to improve IV uniformity. Ultra-high deﬁnition 3840x2160 65in. liquid-crystal display with IGZO TFT was also fabricated and PNBTS< I3I V; Vth U% < 2 V was achieved.
AMD4 - 3:
11:40

Invited Amorphous Oxide Semiconductor Thin Film
Transistor for Novel Device Applications
S. Jeon*,**, I. Song*,**, S.-E. Ahn*,**, C. I. Kim*,**,
U.-I. Chung*,***Samsung Advanced Inst. of Tech., Korea**Samsung Elect., Korea

Among various semiconductor devices, electronically active oxide thinﬁlm transistors (TFTs) have received considerable attention for a wide
range of device applications. In this presentation, we review various
device applications utilizing amorphous oxide semiconductor TFT,
which include photo-sensor, image sensor and other device
applications.
AMD4 - 4L
12:05

Novel Fabrication Method for Self-Aligned BottomGate Oxide TFTs
M. Nakata, H. Tsuji, Y. Fujisaki, H. Sato, Y. Nakajima,
T. Takei, T. Yamamoto
NHK, Japan

We have developed a novel fabrication method using excimer laser
irradiation for self-aligned bottom-gate oxide thin-ﬁlm transistors(TFTs). Irradiation from the back-side of the substrate using the gateelectrode as a mask reduces resistance in InGaZnO (IGZO) ﬁlms
sufﬁciently for their application as source/drain regions in bottom-gate
IGZO-TFTs.
9:20 - 12:20

Event Hall

Poster FMCp: FPD Manufacturing, Materials & Components
FMCp - 16

Properties of Cu Doped NiO Transparent Oxide Thin
Films by Sol-Gel Solution
C. Takahashi, M. Kawamura, Y. Abe, K. H. Kim
Kitami Inst. of Tech., Japan

Wide band-gap oxide semiconductor nickel oxide thin ﬁlms wereprepared by sol-gel spin-coating under various annealing temperaturesfrom 250 to 450 C and Cu doping amounts from 0 to 20 at.%. The
optical and structural properties of these ﬁlms signiﬁcantly depend on
the temperature and the Cu doping amount.
24

Wednesday

December 5

FMCp - 17

Low Temperature Fabrication and UV Treatment of
Spin Coated ZnO Films Using Partial Hydrolyzate ofDiethylzinc Based Solutions
K. Haga, K. Inaba, K. Toyota, Y. Takemoto, K. Tokudome,
M. Oshima*, K. Yoshino*
Tosoh Finechem, Japan*Univ. of Miyazaki, Japan

9:20 - 12:20

Event Hall

Poster FLXp: Flexible Display Technologies
FLXp - 3

Flexible Non-Volatile Memory Based on IndiumGallium-Zinc-Oxide with Excellent Reliability andFlexibility
Y.-S. Fan, C.-H. Hsu, C.-H. Chang, W.-H. Huang,
M.-C. Yu*, P.-T. Liu
Nat. Chiao Tung Univ., Taiwan*WINTEK, Taiwan

The memory characteristics of a-IGZO RRAM reveal excellent
reliability including 1000 times DC sweep endurance, 104 pulse
endurance, 104 s data retention with read disturb immunity.
Furthermore, this work also demonstrated on ﬂexible substrate, whichshows the very potential ﬂexibility applications.
----- Lunch ----14:00 - 15:25

Room A

AMD5: Oxide TFT: Solution Process
Chair:
Co-Chair:J. S. Park, Samsung Advanced Inst. of Tech., Korea
H. Hamada, Panasonic, Japan

AMD5 - 1:
14:00

Invited New Approaches for High Performance andMulti-Functional Solution-Processed Oxide TFT
Technologies
H. J. Kim
Yonsei Univ., Korea

In this study, new approaches for high performance and multi-functional
solution-processed amorphous oxide semiconductor (SAOS) thin-ﬁlm
transistors (TFTs) are presented: a multi-stacked active layer structure
for highly stable SAOS TFT, a self-patternable SAOS TFT (both active
layer and source/drain electrodes), and DNA detection using SAOS
TFT.
25

Oxide TFT

Low temperature fabrication of ZnO ﬁlms using partial hydrolyzate ofdiethylzinc based solution were investigated. UV treatment was
effective to improve the electronic performance of ZnO ﬁlms. Group 13
element metals (Ga and In) compounds were mixed to our precursor
solution and transparent multi-metal oxide ﬁlms were obtained.

Wednesday
AMD5 - 2
14:25

December 5
Solution-Processed Amorphous In2O3-Based TFT
Performance Depending on the Semiconductor Film
Morphology
S. Botnaraş*,**, D. Weber*, D.-V. Pham*, J. Steiger*,R. Schmechel***Evonik Inds., Germany**Duisburg-Essen Univ., Germany

The morphology of solution-processed amorphous In2O3-based thinﬁlms annealed at 350 C was investigated. The semiconductor solutions
were provided by Evonik Industries AG. By increasing the smoothnessof the semiconductor thin ﬁlm it is possible to improve the fabricatedTFTs, achieving mobilities above 15 cm²/Vs and higher gate bias stressstability.
AMD5 - 3
14:45

Effects of Zr Doping on the Performance of
Solution-Processed InZnO Thin-Film Transistors
S.-Y. Liu, B.-Y. Su, P.-C. Kao*, S.-Y. Chu
Nat. Cheng Kung Univ., Taiwan*Nat. Chiayi Univ., Taiwan

Thin-ﬁlm transistors with zirconium doping on the indium-zinc oxide asactive layer by the solution-processed deposition method were
fabricated and their TFT characteristics were examined. The solutionprocessed ZrInZnO ﬁlms show high transmittance over 90% in thevisible region and good electrical characteristic of Ion / Ioff ratio current
over 105.
AMD5 - 4
15:05

Effects of Solution-Processed Al2O3 Gate Insulator
Thickness on IGZO TFTs
S.-M. Song, J.-S. Lee, D.-W. Kang, J.-Y. Kwon*,
M.-K. Han
Seoul Nat. Univ., Korea*Yonsei Univ., Korea

We fabricated IGZO TFTs employing solution-processed Al2O3 gateinsulator with various thicknesses. Leakage current density of Al2O3
ﬁlms decreased exponentially and dielectric constant decreased withincreasing insulator thickness. When the insulator thickness was 230
nm, the TFT showed 9.00 cm2/Vs of saturation mobility and 3.4 V of thethreshold voltage.
----- Break -----

26

Wednesday

December 5

15:50 - 17:25

Room A

FLX3: Flexible Oxide TFTs
Chair:
Co-Chair:M. Ito, Toppan Printing, JapanK. Uemura, Nippon Steel & Sumitomo Metal, Japan

FLX3 - 1:
15:50

Invited Development of Low Temperature SolutionProcessed Metal-Oxide TFT Materials
J. Steiger, D.-V. Pham, M. Marinkovic, A. Hoppe,
A. Neumann, A. Merkulov, R. Anselmann
Evonik Inds., Germany

FLX3 - 2
16:15

Flexible AMOLED Display on Polyethylene
Napthalate (PEN) Foil with Metal-Oxide TFT
Backplane
A. K. Tripathi, B. van der Putten, J.-L. van der Steen,
K. Tempelaars, B. Cobb, M. Ameys*, T. H. Ke*, K. Myny*,
S. Steudel*, M. Nag*, S. Schols*, P. Vicca*, S. Smout*,
J. Genoe*, P. Heremans*, I. Yakimets, G. Gelinck
Holst Ctr./TNO, the Netherlands*imec, Belgium

We present a top emitting monochrome AMOLED display with 85 ppi
resolution using an amorphous Indium-Gallium-Zinc-Oxide (IGZO) TFT
backplane on PEN-foil. Maximum processing temperature was limited
to 150oC in order to ensure an overlay accuracy < 3 µm on PEN foil.
FLX3 - 3
16:35

Solution-Processed Low Temperature AmorphousThin Films
B. Singh, J. Jasieniak, C. D. Easton, L. Tozi, M. Bown
CSIRO Material Sci. & Eng., Australia

Oxidative treatment effectively reduces residual impurities in the thinﬁlms of metal oxide deposited via precursor route enabling reduced
temperature of processing. Non-halide based precursors were found to
be good candidate which shows that oxidative treatment signiﬁcantly
enhance the rate of bulk metal oxide formation resulting in high mobility
transistors.

27

Oxide TFT

We present recent developments at Evonik in regard to solution-based
processing techniques of metal oxides for TFT applications. Speciﬁc
tailored materials for different annealing temperatures aredemonstrated and include mobilities above 2 cm²/Vs at temperatures of
160 C, suitable for low cost ﬂexible substrates.

Wed./Thu.
FLX3 - 4L
16:55

December 5/6
High Performance Indium Zinc Oxide Thin-Film
Transistors Fabricated by Solution-Process at Low
Temperature
L. Lu*, Y. Osada*, Y. Kawamura*, T. Nishida*,
Y. Ishikawa*,**, Y. Uraoka*,***Nara Inst. of S&T, Japan**JST, Japan

Solution-processed InZnO thin ﬁlm transistors showed a high ﬁeld
effect mobility of 19.5 cm2/V·s at a low fabrication temperature of 300 C
by an aqueous solution. The on/off current ratio exceeded 109. Good
bias stability was also obtained by the passivation of Al2O3 thin ﬁlms.
FLX3 - 5L
17:10

Amorphous In-Ga-Zn-O Thin Film Transistors on
Ultra-High-Tg Polycarbonate Films
T. Negishi, Y. Ikeda, T. Daidou, T. Shiro, K. Ikeda*
Teijin, Japan*Teijin Chems., JapanAn ultra-high-Tg (264 C) polycarbonate (UHT-PC) ﬁlm is developed foruse in high temperature processes for fabricating plastic electronic
devices. This UHT-PC ﬁlm can be used as a substrate in electronic
devices that are annealed at temperatures over 200 C. Amorphous InGa-Zn-O TFTs on the UHT-PC ﬁlms are demonstrated.
Author Interviews and Demonstrations
17:30 – 18:30

Thursday, December 6
9:20 - 12:20

Event Hall

Poster AMDp1: Oxide TFT
AMDp1 - 1

Withdrawn

AMDp1 - 2

A Study of Degradation Mechanism about BiasTemperature-Illumination Instability in a-IGZO TFTs
H. Choi, D. Y. Park, J. W. Baek, S. J. Yu, S. H. Jeon
LG Display, Korea

We have investigated the degradation mechanism of threshold voltage
shift(ΔVth) of a-IGZO TFTs induced by bias-temperature-illuminationstress. Under positive bias stress, charge trapping induced temperature
is progressively the dominant mechanism. The ΔVth by negative bias
stress is dependent on the thermal-induced / photo-generated holetrapping caused by temperature and illumination.

28

Thursday
AMDp1 - 3

December 6
The Effect of Annealing Temperature in SolutionProcessed In-Ga-O Thin-Film Transistors
D. H. Yoon, H. S. Lim, S. J. Kim, J. Jung, H. J. Kim
Yonsei Univ., Korea

As the annealing temperature increased from 200 to 300 C, the InGa-O (IGO) thin-ﬁlm transistors (TFTs) showed enhanced
performances for switching devices. The annealing temperature above
350 C caused the IGO TFT excessively conductive, and it was
attributed to the crystallization of IGO thin-ﬁlm.
AMDp1 - 4

Oxide TFT

Investigation on Effects of Composition on
Transparent Aluminum Zinc Tin Oxide Thin-Film
Transistors
C.-S. Fuh, L.-F. Teng, Y.-S. Fan, C.-H. Chang, P.-T. Liu
Nat. Chiao Tung Univ., Taiwan

We investigated on electrical performance of amorphous Al-Zn-Sn-O
thin ﬁlm transistor (AZTO TFT). The mobility enhanced while theconcentration of Sn increased. The improved stability can be attributed
to the increase of Sn concentration and enhancement of bonding
energy of metal ion with the increase of O2 gas ﬂow rate.
AMDp1 - 5

High Performance Inverter with a-IGZO-Based
Resistor Load and Self-Aligned Coplanar a-IGZO
Driving TFT
D. Geng, D. H. Kang, M. J. Seok, M. Mativenga, J. Jang
Kyung Hee Univ., Korea

We demonstrate an inverter implemented with a coplanar amorphousindium-gallium-zinc-oxide (a-IGZO) driving thin-ﬁlm transistor (TFT)
and an a-IGZO-based resistor load. The inverter has larger voltage
gain and wider swing range compared to inverters employing
enhancement mode TFTs as load, making it applicable to high speed
logic gates and other simple circuits.
AMDp1 - 6

New IGZO-Based Oxide Semiconducting Material
for Back Channel Etch Type Thin Film Transistor
S. Morita, K. Hirose, A. Hino, H. Goto, T. Kugimiya,
E. Kusumoto*
Kobe Steel, Japan*Kobelco Res. Inst., Japan

We have developed a new IGZO-based oxide semiconducting material
for back channel etch (BCE) type thin ﬁlm transistor. It is demonstrated
that the TFTs using the new oxide semiconducting material with highchemical stability for conventional etchant possesses better
performance compared with that of conventional IGZO TFT with BCE
structures.

29Thursday

December 6

AMDp1 - 7

Analysis of Electronic-Structural Change in
a-InGaZnO by High Pressure Water Vapor Annealing
Y. Ueoka, N. Maejima, H. Matsui, F. Matsui, M. Morita,
S. Kitagawa, M. Fujita, K. Yasuda, H. Yamazaki,
S. Urakawa, M. Horita, Y. Ishikawa, H. Daimon, Y. Uraoka
Nara Inst. of S&T, JapanThe effect of high pressure vapor annealing (HPV) for a-IGZO wasinvestigated by angle-resolved XPS. We found that In HPV enable tooxidize In atoms and reduce Ga atoms. It is considered that highchannel mobility and stability attribute these reactions.
AMDp1 - 8

The Comparison of Lithium Doping Impact to
Solution-Processed ZnO/InZnO Thin Film
Transistors Characteristics
Y. W. Wang, P. H. Fang, A. C. Cheng, W. C. Su, P. R. Lin
Nat. Changhua Univ. of Education, Taiwan

We report the impact of lithium doping to ZnO/InZnO thin ﬁlm
transistorsʼ electrical and optical characteristics. A best device withmobility ~0.94 cm2/Vs, and an on/off current ratio over 106 wereachieved. Further, the high ionization energy of lithium (5.39 eV) led
the transistor stabilizer than which without lithium doping.
AMDp1 - 9L A Method to Increase the Reflectivity ofTransflective LCDs
S. Huo, W. Jiang
Shanghai Tianma Micro-Elect., China
We have provided a new transﬂective liquid crystal displays which has
a novel structure to broaden the reﬂective area in one pixel. By making
the reﬂector cover the interval area between the adjacent pixels, almost
all of the pixel area is effective display part. So the reﬂectance isimproved largely.
AMDp1 - 10L Oxide TFT Wired MUX Circuit for Dual Mode Shift
RegisterE.-J. Song, H. Nam
Kyung Hee Univ., Korea
This paper demonstrates a wired MUX circuit for an oxide TFT dual
mode shift register which supports two scanning pulses of different
timings and pulse widths at one gate line. This integrated MUX
guarantees the rail-to-rail output voltage over the threshold voltage
variation from –4 V to 5 V.

30

Thursday

December 6

AMDp1 - 11L Electrical Degradation Behavior of a-InGaZnO
Thin-Film Transistors with Sm2O3 Gate Dielectrics
F.-H. Chen, J.-H. Liu, S. Mondal, B.-L. Wu, T.-M. Pan
Chang Gung Univ., Taiwan
We investigate the electrical degradation behavior in amorphousInGaZnO (a-IGZO) thin-ﬁlm transistors (TFTs) with Sm2O3 gate
dielectrics. The negative shift of threshold voltage in Sm2O3 a-IGZO
TFTs can be attributed to the generation of extra electrons from oxygen
vacancies in the a-IGZO channel.
----- Lunch ----Room A

AMD7: Oxide TFT: Reliability
Chair:
Co-Chair:T. Kamiya, Tokyo Inst. of Tech., Japan
M. Hiramatsu, Japan Display Central, Japan

AMD7 - 1
14:00

Instability of Light Illumination Stress on
Amorphous InGaZnO Thin Film Transistors
S. Park, E. N. Cho, I. Yun
Yonsei Univ., Korea

In this paper, the effects of the different wavelengths of the light underboth positive and negative VGS stress on Amorphous InGaZnO Thin
Film Transistors are investigated. The TFT instability depending on
optical and electrical stresses can be explained by the charge trapping
mechanism and the interface modiﬁcation.
AMD7 - 2
14:20

The Effects of Wavelength and Negative Bias on
Light-Induced Hysteresis of In-Ga-Zn-O Thin-Film
Transistors
S.-H. Kuk, S.-Y. Lee, M.-K. Song, S. Kwon*, S. C. Youn*,
M.-K. Han
Seoul Nat. Univ., Korea*LG Display, Korea

We investigated the effects of wavelength and negative bias on lightinduced hysteresis of In-Ga-Zn-O thin-ﬁlm transistors. Transfer
characteristics were measured under various wavelengths and sweep
ranges. Hysteresis was observed under the 450 nm illumination, andwas increased with wavelength decrease. And hysteresis wasincreased, as applied negative bias increased.

31

Oxide TFT

14:00 - 15:15

Thursday

December 6

AMD7 - 3
14:40

The Influence of New SiNX Gate Insulator in
a-InGaZnO Thin Film Transistors
H. Yamazaki, Y. Ishikawa, Y. Ueoka, M. Fujiwara*,
E. Takahashi*, Y. Andoh*, Y. Uraoka
Nara Inst. of S&T, Japan*Nissin Elec., Japan

We fabricated highly reliable amorphous In-Ga-Zn-O thin-ﬁlm
transistors (a-IGZO TFTs) with new silicon nitride (SiNx) as a gateinsulator. The SiNx layer was formed with utilizing SiF4/N2 as sourcegases at a temperature as low as 150oC. We studied the inﬂuence ofhydrogen and ﬂuorine on the electrical characteristics.
AMD7 - 4

Withdrawn

AMD7 - 5L
15:00

The 4 Masks a-IGZO TFT Structure with High
Uniformity and Electrical Stability
J. Y. Yan, W.-W. Tsai, C.-Y. Hung, H.-C. Yao, L.-H. Chen,
H.-C. Lin, Y.-C. Lin
ITRI, Taiwan

This article provides the four masks structure and process for channel
protection a-IGZO TFTs. The hybrid channel protection structure isdevelopment to replace the PECVD SiO2 and improve the stability andmanufacturing yield. TFT mobility is over 20 cm2/Vs, and standard
derivation of Vth is less than 0.03 V.
----- Break ----15:50 - 17:15

Room A

AMD8/FLX7: Oxide TFT: Flexible Displays
Chair:
Co-Chair:

C.-H. Cheng, AU Optronics, Taiwan
M. Kimura, Nagaoka Univ. of Tech., Japan

AMD8/
FLX7 - 1:
15:50

Invited Flexible AMOLED Displays Driven by a-IGZO
TFTs and their Applications
H. Yamaguchi, T. Ueda, K. Miura, N. Saito, S. Nakano,
T. Sakano, K. Sugi, I. Amemiya
Toshiba, Japan

Reliability of a-IGZO TFTs on plastics against bias-temperature stresshas been improved. We developed an 11.7-in. AMOLED display drivenby a-IGZO TFTs on plastics. Using the panel, we demonstrated a
prototype of ﬂexible-display system integrated with a bend-input
function that enables users to interact with the display by ﬂexing it.

32

Thursday
AMD8/
FLX7 - 2:
16:15

December 6
Invited A 9.9-in. qHD Top-Emission Flexible OLED
Display Driven by Oxide TFTs
K. Teramoto, E. Fukumoto, T. Fukuda, K. Shimokawa,
T. Saito, T. Tanikawa, M. Suzuki, G. Izumi, M. Noda,
S. Kumon, T. Arai, T. Kamei, M. Kodate, S. No,
T. Sasaoka, K. Nomoto
Sony, Japan

AMD8/
FLX7 - 3
16:40

Flexible Top-Gate Amorphous InGaZnO TFTs on a
New Colorless Polyimide Substrate for Flexible
Display Applications
Y.-H. Yeh, C.-C. Cheng, M.-J. Yu, H.-C. Ku, B. C.-M. Lai,
B.-Y. Chou, E. Horii*, E. Kuribayashi*, T. Iwamoto*,
M. Yamazaki*, H. Inari*, K. Kurimoto*
ITRI, Taiwan*Kaneka, Japan

The ﬂexible top-gate a-IGZO TFTs array was fabricated on a Kanekaʼscolorless polyimide (PI) substrate at 200oC. Our proposed PI substrate
has high Tg (~350oC), high light transmittance (~87%), and low thermal
coefﬁcient (8 ppm/oC). Polymer resin (ILLUMIKA) was also applied topassivate the a-IGZO TFTs.
AMD8/
FLX7 - 4L
17:00

High-Performance Solution Processed Indium Oxide
Thin Film s Transistors
C. Avis, Y. G. Kim, H. R. Hwang, J. Jang
Kyung Hee Univ., Korea

We have developed a high performance solution processed indium
oxide TFT (InOx TFT). The spin-coated TFTs has saturation mobility,
Vth, and gate swing of 57.3 cm2/Vs, 0.4 V, and 149 mV/dec., respectively.
Inverters based on InOx TFTs were fabricated and showed a gain~27
at VDD=3 V.
Author Interviews and Demonstrations
17:30 – 18:30

33

Oxide TFT

We have developed a direct fabrication method of oxide TFTs on a
ﬂexible substrate. We have also developed a ﬂexible color ﬁlter array forwhite OLEDs. The oxide TFT is integrated on a ﬂexible substrate. The
fabricated display had a wide color gamut with over 100% NTSC in uʼvʼspace.

Wed./Thu.

December 5/6

Special Topics of Interest on
Augmented Reality
Wednesday, December 5
14:00 - 17:00

Event Hall

Poster DESp1: Poster: Display Electronic Systems (AR)††DESp1 - 1

Short Presentation (See p. 193)

Image Synthesis from Illumination Estimation
T.-H. Lin
Nat. Taiwan Univ. of S&T, Taiwan

Our proposed method synthesizes images with cast shadows andshading of 3D graphic models. We use a calibration board and a plastic
gaze ball for illumination estimation. Then, 3D graphic models
corresponding to the light directions and relative intensities aresuperimposed to induce photorealistic images.

Thursday, December 6
9:00 - 10:30

Room B-1

VHF6: Wide-Angle and Head-Up Display Human Factors
Chair:
Co-Chair:T. Kurita, NHK, Japan
A. Yoshida, Sharp, Japan

VHF6 - 1:
9:00

Invited Education for Disaster Prevention Using
Ultra-Realistic Dome Images −Learning ThroughImages of the Great East Japan Earthquake−
M. Okyudo
Wakayama Univ., JapanOn 11 March 2011, our country suffered an earthquake and a tsunami
of unprecedented size. Streets and towns throughout a wide region
were destroyed. We recorded these disaster areas in ultra-realistic
dome images, presented them in a digital planetarium, and began to
use them as disaster prevention education.
VHF6 - 2
9:30

Development of Perceived Depth Position Control
Method with a Preceding Obstacle for Monocular
Head-Up Display Images
A. Hotta, T. Sasaki, A. Moriya, H. Okumura
Toshiba, JapanWe developed novel depth perception control methods for the
monocular HUD virtual image when there is a preceding obstacle. The
results show that the perceived depth position of the HUD images canbe controlled from 30 m to 120 m within an error of 30% which is further
than the obstacle position.
34

Thursday

December 6

VHF6 - 3
9:50

Effect of a Head-Up Display on Reaction Time in a
Skiing Simulation
M. Lolic, R. Hoskinson, É. Naugle, H. Abdollahi
Recon Instrs., Canada

A computer simulation was created to monitor the reaction time ofparticipants using a heads up display (HUD) while watching a ﬁrstperson ski video. It was found on average that the reaction timeincreased by 0.19 seconds when users were asked to pay attention to
notiﬁcations on a HUD.
VHF6 - 4
10:10

A LC Lens Array Based Projection System for Near
Eye Displays
S. Valyukh, J. De Smet*,**, O. Slobodyanyuk***,H. De Smet*,**Linköping Univ., Sweden*imec, Belgium**Ghent Univ., Belgium***Taras Shevchenko Nat. Univ. of Kyiv, Ukraine----- Break ----10:50 - 12:30

Room B-1

3D6: Digital Museum of Kyoto Gion Festival
Chair:
Co-Chair:

M. Tsuchida, NTT, JapanK. Makita, AIST, Japan

3D6 - 1:
10:50

Invited Digital Museum of Gion Festival within
Virtual Kyoto
K. Yano, T. Seto, D. Kawahara*
Ritsumeikan Univ., Japan*CAD Ctr., Japan

Virtual Kyoto is a historical virtual geographic environment of thehistorical city of Kyoto, which aims at reconstruction and visualizationof the cityʼs historical landscapes. This paper introduces Digital
Museum of Gion Festival which represents Kyotoʼs culture andtradition, based on Virtual Kyoto.

35

AR

A projection optical system for hypothetic near eye displays that can bebuilt into a contact lens or glasses is considered. The systemparameters are evaluated. Aspects of practical usage of the displays
and possible embodiments of the optical system are discussed.

Thursday
3D6 - 2:
11:15

December 6
Invited A Virtual Tour of Gion Festival Yamahoko
ParadeL. Li, W. Choi*, K. Hachimura, T. Nishiura, K. Yano
Ritsumeikan Univ., Japan*Gunma Nat. College of Tech., Japan

We tried to virtually reproduce Yamahoko Parade in Kyoto Gion
Festival, which has been registered in the list of “Intangible Heritage of
Humanity” by UNESCO. This work contributes to the research of digital
museum and provides a platform that allows the users to virtuallyexperience the atmosphere of the event.
3D6 - 3:
11:40

Invited Particle-Based Translucent Visualization of
Funeboko for the Gion Festival
S. Tanaka, M. Uemura, M. Yamamoto, K. Hasegawa,S. Nakata
Ritsumeikan Univ., Japan

We translucently visualize laser-scanned 3D point data of the
Funeboko ﬂoat for the Gion Festival (Kyoto). We use the particle-based
surface rendering, which we recently proposed, regarding the scanned
points as particles. Our approach enables precise and comprehensible
translucent visualization of the complex internal 3D structure of
Funeboko.
3D6 - 4:
12:05

Invited Digital Archiving and Large-Scale VisuoHaptic Display of Large 3D Woven Cultural Artifacts
W. Wakita, M. Tsuchida*, J. Yamato*, H. T. Tanaka
Ritsumeikan Univ., Japan*NTT, Japan

We have measured large 3D woven cultural artifacts with rail-wheel 3D
scanning system, and captured high-resolution images with a two-shot
type 6-band image capturing system, and modeled woven cultural
artifacts in 3D. This paper describes a digital archiving and large-scalevisuo-haptic display of large 3D woven cultural artifacts.
----- Lunch -----

IDW ’13The 20th International Display Workshops
December 4-6, 2013
Sapporo Convention Center
Sapporo, Japan
http://www.idw.ne.jp36

Thursday

December 6

14:00 - 15:35

Room B-1

DES5: Recent Advances in Augmented Reality Applications
Chair:
Co-Chair:K. Makita, AIST, Japan
M. Tsuchida, NTT, Japan

DES5 - 1:
14:00

Invited SmartAR: Integrated Augmented Reality
Technology for Novel Application Creation
T. Yoshigahara
Sony, Japan

Sony has developed integrated Augmented Reality technology called
as “SmartAR.” Fast object recognition and dynamic 3D space
recognition have enabled us to propose various novel applications. In
this talk, we present an outline of the development of SmartAR and thevarious applications we created.
DES5 - 2:
14:25

Invited Mixed Reality Applications of Design
Engineering & Manufacturing

AR

T. AsoCanon, Japan
Canon started Mixed Reality solution business this year. We areplanning to develop this solution business from the design engineering& manufacturing ﬁeld. It enables the intuitive evaluation of design data
created by 3D-CAD. Canon is going to develop new business domain
by Mixed Reality.
DES5 - 3:
14:50

Invited Recent Trends on Visual Tracking forAugmented Reality
H. Uchiyama
Toshiba, Japan

Computer vision technologies play an important role for estimating andtracking a camera pose in augmented reality. This paper reports stateof-the-art visual tracking technologies and classiﬁes them into three
categories: ﬁducial marker based augmented reality, object templatebased augmented reality and wide area augmented reality.
DES5 - 4
15:15

Texture Significant Hash Function with Robust
Occlusion Handling for Fast Inpainting the
Virtualized-Reality Models
K. Thangamani*,**, T. Ishikawa**, K.Makita**, T. Kurata*,***Univ. of Tsukuba, Japan**AIST, Japan

This paper discusses the texture signiﬁcant hash table usage for speed
up the inpainting process in the virtualized-reality indoor models. The
proposed hash works are included in the Exemplar-Based inpainting
and this revised method is tested in the virtualized-reality indoor
models.
----- Break ----37

Thursday

December 6

15:50 - 17:35

Room B-1

INP6: AR Interactive Systems
Chair:
Co-Chair:

H. Iseki, Tokyo Women’s Medical Univ., Japan
N. Hashimoto, Citizen Holdings, Japan

INP6 - 1:
15:50

Invited SCOT (Smart Cyber Operating Theater)
Project: Advanced Medical Information Analyzer for
Guidance of the Surgical Procedures
H. Iseki, Y. Muragaki, M. Tamura, T. Suzuki,
K. Yoshimitsu, S. Ikuta, J. Okamoto, M. Chernov,
K. Izumi*
Tokyo Women’s Medical Univ., Japan*Univ. of Tokyo, Japan

Computer-assisted advanced medical information analyzer is based on
the constant monitoring, recording, co-registration and archiving of thevarious data. The system permits fast extraction of the required
parameters from the database and signiﬁcantly facilitates evaluation of
the clinical procedures, which may result in signiﬁcant increase of theirsafety and reliability.
INP6 - 2
16:15

Laser Projection UI Robot System and Its
Applications
M. Ide, Y. Abe, T. Komiyama, S. Fukaya, T. Tamura,
K. Arakawa, T. Nozaki
Citizen Holdings, Japan

We present a novel pan-tilt projection UI robot system using a laser
light source with a MEMS scanner in combination with a hand tracking
sensor. The UI robot system can detect and track a hand and thenproject a virtual remote controller (VRC) image onto the top of a palm.
INP6 - 3L:
16:35

Invited Real-Time Rendering Method of Virtual
Liquid in Mixed Reality Environment with Automatic
Generation of Sound Effect
M. Imura, Y. Kuroda, O. Oshiro
Osaka Univ., Japan

We propose a real-time rendering method of virtual liquids in mixed
reality environment and an automatic generation method of soundeffect of liquids based on a computational ﬂuid dynamics simulation.
Two cameras are adopted for capturing the images of real environment
for appropriate rendering of transparent liquids.

38

Thursday
INP6 - 4L:
16:55

December 6
Invited Synchronized Visualization of Bone Cutting
to Support Microendoscopic Discectomy
M. Nakao, K. Imanishi*, M. Kioka**, M. Yoshida**,K. Minato***, T. Matsuda
Kyoto Univ., Japan*e-Growth, Japan**Wakayama Medical Univ., Japan***Nara Inst. of S&T, Japan

This presentation introduces a new concept of augmented reality (AR)assisted bone cutting to support Microendoscopic Discectomy. The
designed system dynamically updates volume rendered images ofpatientʼs CT data while synchronizing with intraoperative cutting
procedures, and contributes to precise and rapid cutting as well as
reducing perceptual difﬁculties in microendoscopic operation.
INP6 - 5L:
17:15

Invited Contents-Rich Display for Medical Diagnostic
and Surgical Aid
K. MoriThis paper presents recent advances of medical image processing
techniques utilized in diagnostic and surgical assistance from theviewpoint of human anatomy exploration and its display. Interactive
rendering of human anatomical structures is now widely utilized in theclinical ﬁled. This presentation demonstrates contents-rich display
based on medical image recognition.
Author Interviews and Demonstrations
17:30 – 18:30

EXHIBITION
12:40 – 18:20 Tuesday, Dec. 4, 2012
10:00 – 18:00 Wednesday, Dec. 5, 2012
10:00 – 18:00 Thursday, Dec. 6, 2012
10:00 – 14:00 Friday, Dec. 7, 2012
Event Hall, 1F
Kyoto International Conference CenterFree admission with your registration name tag
39

AR

Nagoya Univ., Japan

Wednesday

December 5

Special Topics of Interest on
Lighting Technologies
Wednesday, December 5
9:20 - 12:20

Event Hall

Poster FMCp:FPD Manufacturing, Materials & Components
FMCp - 9

An Analytical Model for Describing LED Pad
Temperature in Backlight Unit
K.-Y. Chang, C.-C. Hu, C. Xiong, W.-Y. Wei
Shenzhen China Star Optoelect. Tech., China

An Equivalent Thermal Resistance, ETR, is introduced in this paper topredict LED (light emitting diode) pad temperature while same thermal
management is applying. A simpliﬁed experiment is conducted to ﬁnd
the behavior of ETR as different heat sink size is applied. Analyticalsolution, a power function, shows great match with the experiment
data.
FMCp - 10

The Study on Relation between Color Gamut andLuminous Efficiency Based on the Shift of Color
Filter and LED Spectrum
W. Zheng, C.-T. Kang
Shenzhen China Star Optoelect. Tech., China

The relation between color gamut and luminous efﬁciency basic on theshift of color ﬁlter and LED spectrum is proposed. The study isundergone by simulation and the simulation result shows that the twoparameters we study in the paper usually change oppositely on thewhole.
FMCp - 11

Development of a Simulation Model to Analyze theChromaticity Variation at the Place Lit by RYGBWhite-LED
K. Misono
Miyakonojo Nat. College of Tech., Japan

Although the RYGB-White-LED can provide a ﬂexible control ofphotometric and colorimetric characteristics, the practical issue is tosuppress the color variation on the lit-plane. By taking into account the
spectral irradiance, we developed a ray tracing model that can evaluate
the color uniformity on the lit-plane.

40Wednesday
FMCp - 12

December 5
Transmittance of LED Encapsulant Containing
Quantum Dot with Various Types of Ligands
C. S. Lee*,**, C. J. Han**, S.-K. Hong**Dongguk Univ., Korea**KETI, Korea

In this study, transmittance and degree of cure of encapsulant wasmeasured according to the number of puriﬁcation of quantum dot,
when quantum dot was used as LED phosphor. The changes in the
degree of cure was checked along with the types of ligand in quantum
dot.
FMCp - 13

Conversion Efficiency of RGB Phosphor Array on
the Lightguide
H. J. Jeon, K. S. Lim, J. H. Kwon
Yeungnam Univ., Korea

The light power conversion efﬁciency of the RGB phosphors wasmeasured in terms of the phosphor concentration. The excitation
wavelength was 450 nm. The power conversion efﬁciency was almost
doubled when the reﬂecting layer was placed behind the phosphor
layer and was proportional to the phosphor concentration.
FMCp - 14

Solution for Eliminating Support Pin Shadow Murain Direct LED Backlight

LIT

K.-Y. Chang, C.-C. Hu, Z. Su
Shenzhen China Star Optoelect. Tech., China
A simple method for eliminating support pin shadow mura in direct LED
backlight for LCD-TV was proposed. Mechanism of support pin shadow
mura was discussed. Simulation and experiment results conﬁrmed that,by lower the height of support pin, shadow mura would effectively dropoff. However, the supporting function remains.
FMCp - 15

A Modified Color System for LED Chromaticity
Ranking in a System
C. Feng, K.-Y. Chang, C.-C. Hu, C. Ning
Shenzhen China Star Optoelect. Tech., China

A modiﬁed color system is proposed for light emitting diode (LED)chromaticity ranking. By directly giving the output chromaticity, it solves
the problem of LED metamerism that results in output chromaticdifference of lighting systems. It may also simplify the LED chromaticity
control and increase the LED usage rate.

41

Thursday

December 6
Thursday, December 6

9:00 - 10:00

Room C-2

PH4: Phosphors Late News
Chair:
Co-Chair:

D. Y. Jeon, KAIST, Korea
K. Hara, Shizuoka Univ., Japan

PH4 - 1L
9:00

A New Paradigm for Phosphor Discovery
K.-S. Sohn, W. B. Park, M. Ibukiyama*
Sunchon Nat. Univ., Korea*Denki Kagaku Kogyo, JapanWe employed a non-dominated-sorting genetic algorithm (NSGA) for apreliminary screening of the multidimensional search space, andparticle swarm optimization (PSO) for the ensuing ﬁne-tuning. We also
created a parameter designating the novelty of the phosphors, the socalled structural rank, and used it as an objective function in the NSGA.
PH4 - 2L
9:15

Selecting a White Point Using (Y1-aGda)3Al5O12:Ce3+(Where a is in the Range 0.3 to 0.6) Phosphors on
Screens and Two Blue LEDs
J. Silver, R. Withnall, P. MarshBrunel Univ., UK(Y1-aGda)3Al5O12:Ce3+ (where a = 0.3-0.6) phosphors were synthesised,
incorporated into inks and screen printed. The phosphors were usedwith blue LEDs to produce white light. The color point of the white light
was ﬁne tuned by varying parameters including the gadolinium
concentration, phosphor layer thickness, and the LED emission
wavelength.
PH4 - 3L
9:30

Luminescence Properties of Novel Nitride-Based
Yellow Phosphor for White Light-Emitting Diodes
S. Takashina, A. Ohto
Mitsubishi Chem., Japan

We succeeded in synthesizing novel yellow phosphors with color
coordinates from x = 0.417 to 0.475. We investigated the emission
spectra of La3Si6N11:Ce and its derivatives (LSN). We were able tocreate 9000 ~ 4000 K white light-emissions by combining various
colored LSN and blue LEDs.
PH4 - 4L
9:45

New Shape White LEDs with Uniform Hue
H. Daicho, A. Nomura, K. Enomoto, Y. Shinomiya,
S. Sugimori
Koito Manufacturing, Japan

We fabricated new shape white LEDs for general lighting. The whiteLEDs consist of a violet-chip and the thick phosphor layer, whichcontains blue and yellow emitting phosphors. The phosphor
concentration of the phosphor layer is low. The excellent hue uniformityof our white LED will reduce color binning.
----- Break ----42

Thursday

December 6

14:00 - 17:00

Event Hall

Poster OLEDp: OLED Technologies
OLEDp - 12 Materials for Enhancing External Light OutCoupling Efficiency of Organic Light-Emitting
DiodesP.-C. Chien, I.-L. Kao, Y.-L. Hsu, P.-C. Chen
ITRI, Taiwan
The purpose of this study was to present a simple and low cost method
which has a good balance between improvement of OLEDs light
extraction efﬁciency and suppression of color shift at various viewing
angle by attaching scattering ﬁlms with porous particles.
OLEDp - 13 Very-High Color Rendering Index OLEDs with
Natural Light-Style Spectrum
J.-H. Jou, J.-R. Tseng, F.-C. Yang, C.-T. Chen, H.-W. Liu,
S.-P. Chen*, H.-W. Hung*, J.-Y. Li*, M.-C. Liu*
Nat. Tsing Hua Univ., Taiwan*ITRI, Taiwan

OLEDp - 14 Novel Carbazole-Substituted Anthracene
Derivatives for Non-Doped Blue Light Emitting
DiodesR.-H. Lee, Y.-G. Chen, Y.-C. Chang, Y.-C. Chen*,
J.-T. Lin*, R.-J. Jeng**Nat. Chung Hsing Univ., Taiwan*Academia Sinica, Taiwan**Nat. Taiwan Univ., Taiwan
Three anthracene derivatives featuring carbazole moieties as sidegroups were synthesized for use in blue organic light emitting devices.
The highest brightness (6821 cd/m2) was that for the tCz9PhAnt-based
device; the greatest current efﬁciency (2.1 cd/A) was that for thetCz9Ph2Ant-based device.

43

LIT

Natural light-style OLEDs with both color rendering index (CRI) andhigh sunlight spectrum resemblance (SSR) will be presented. The
feasibility of fabricating quality light sources with very-high CRI andvery-high SSR at any designated color temperature warrants OLED to
be the ultimate lighting technique.

Thu./Fri.

December 6/7

OLEDp - 15 Light Extraction Enhancing Buffer Layers for
Organic Light-Emitting Diodes
H. J. Cho, H.-N. Lee
Soonchunhyang Univ., Korea
Numerical simulations and experiments were conducted to study thelight outcoupling enhancement effects based on electrode-buffer
structures. Thin tungsten-oxide buffer and titanium-oxide buffer
increased the outcoupling noticeably. However, thick buffers decreased
the outcoupling. The combined effects of the constructive interference
and the creation of additional bound modes explain these behaviors.

Friday, December 7
9:00 - 10:25

Room A

OLED3: OLED for Lighting Application
Chair:
Co-Chair:Y. Kijima, Sony, JapanT. Ikuta, JNC Petrochem., Japan

OLED3 - 1: Invited Design of Backplanes and Optical
9:00
Enhancement Structure for Large-Area OLEDLighting Panels
M.-H. Ho, C.-C. Lin, Y.-C. Chin, C.-C. Chen, M.-T. Lee,
T.-Y. Cho, C.-W. Chen
AU Optronics, Taiwan
We demonstrate a novel design for large-area OLED lighting panelswith low electrode resistance and short reduction to achieve highbrightness uniformity with both low power efﬁciency loss and highproduction yield. In addition, efﬁciency of OLED lighting panels can befurther enhanced by applying internal extraction layer between
transparent electrodes and substrate.
OLED3 - 2
9:25

Highly Efficient White OLEDs with Single SolutionProcessed Emitting Layer Consisting of Three Kinds
of Dopants
H. Sakuma, S. Nobuki, S. Ishihara, S. Aratani, A. Sano,
K. Kobayashi
Hitachi, Japan

We achieved a highly efﬁcient white organic light emitting diode with asingle emitting layer consisting of three kinds of dopants. The emitting
layer was fabricated with a one-step solution coating process. A
maximum power efﬁciency of 70 lm/W was obtained by applying highﬂuorescence quantum yield dopants and improving light extraction
efﬁciency.

44

Friday

December 7

OLED3 - 3
9:45

Improving the Performance of Solution-Processed
Green Phosphorescent OLEDs Using EL Spectra
AnalysisT. Sugizaki, Y. Shinjo, A. Amano, T. Yonehara, Y. Mizuno,
S. Enomoto, I. Amemiya
Toshiba, Japan

Emission regions in solution-processed green phosphorescent OLEDs
have been estimated by analyzing their electroluminescent (EL)spectra. The performance of the OLEDs has been improved by
optimization of device structure based on the analysis.
OLED3 - 4
10:05

A New 2-Dimensional OLED Circuit Modeling for
Obtaining Uniform Brightness in Large Area OLEDLighting Panels
J.-H. Han, J. Moon, J. W. Huh, D.-H. Cho, J.-W. Shin,
C. W. Joo, J. Hwang, B. J. Lee, S. K. Park, J.-T. Ahn,
N. S. Cho, H. Y. Chu, J.-I. Lee
ETRI, Korea

We report on a new 2-dimensional OLED circuit modeling method for
obtaining uniform brightness across large area OLED lighting panels.
Our method is very useful in predicting the brightness distributions withdifferent panel shapes and sizes. Our simulation results have beensuccessfully applied to fabricate panel with high brightness uniformity.

LIT----- Break ----10:50 - 11:50

Room B-2

FMC9: LED Lighting Technologies
Chair:
Co-Chair:

K. Käläntär, Global Optical Solutions, Japan
K. Li, Wavien, USA

FMC9 - 1
10:50

10,000 Nits Projection-Type Recycling LED BackLight System for Outdoor LCDs
K. Li
Wavien, USA

This paper describes a high brightness back-light system for LCD
displays using Wavien's Recycling LED Technology (RLT). A 2 X 2Micro Cube system comprising four 19-in. display video cubes has
been demonstration with over 10,000 nits output brightness. A single
80-in. diagonal LCD display is being constructed.

45

Friday
FMC9 - 2
11:10

December 7
A Novel Design of LED Embedded Alexis Wound
Retractor
Y. -C. Su*, Y.-S. Chen**, J.-W. Pan*,**, C.-Y. Wu**
*Chi Mei Medical Ctr., Taiwan**Nat. Chiao Tung Univ., Taiwan

The key design of this invention is the LED mounted on the inner ringof Alexis Wound Retractor. With this design, we could offer a muchwide spreaded lightening comparing to the traditional shadowlesslighting.
FMC9 - 3
11:30“Square-Light” Technology as Novel Approach for
Making Ultra-Slim LED Lighting Devices
J. Hou, Z.-W. Koh, W.-C. Ing
LuxingTek, Taiwan

The world thinnest “direct-lit” LED backlight module having a minimal
number of LED light source will be presented. This revolutionary
approach reveals the possibility of converting a strong LED “dot” lightinto a uniform surface light at 7 mm thickness with 50 mm LED pitch.
9:20 - 12:20

Event Hall

Poster PHp: Phosphors
PHp - 16

Effects of Phosphor Distribution and Step-Index
Remote Configuration on the Luminous Efficacy ofWarm White Light-Emitting Diodes
H.-Y. Tsai, T.-H. Liu, H.-Y. Kuo, H.-Y. Lin, S.-Y. Chu
Nat. Cheng Kung Univ., Taiwan

This paper demonstrated that Y down / R up type is the preferable
phosphor distribution for warm pc-WLEDs. Compared with common
warm pc-WLEDs using silicone gel as the remote layer, a step-index
remote conﬁguration proposed herein exhibited a superior luminous
efﬁcacy at 67.4262 lm/W under 350 mA.
PHp - 17

Withdrawn

PHp - 18

Recent Progress in the Development of Ce3+Activated Fluorosulfide and Fluorooxysulfide
Phosphors for LED Lighting
T.-M. Chen, Y.-C. Wu, C.-S. Lee, S.-N. Chen
Nat. Chiao Tung Univ., Taiwan

Several novel Ce3+-activated Y2(Ca,Sr)F4S2, α- and β-YSF, andY3S2OF3 ﬂuorosulﬁde and ﬂuorooxysulﬁde phosphors, have beensynthesized and luminescence was investigated. Fluorosulﬁde-based
phosphors can be excited by blue light and shows yellow-to-orange
and red broadband emissions, respectively. Recent progress on thesynthesis and structure-luminescence relationship of these phosphors
is discussed.
46

Friday

December 7
Selecting a Red Point Using CaS:Eu2+ andSrS:Eu2+ Phosphors on Screens and One Blue LED

PHp - 19

J. Silver, R. Withnall, P. J. MarshBrunel Univ., UK
Screen printing inks containing various CaS:Eu2+:SrS:Eu2+ ratios wereprepared. The phosphors were printed on screens which were excitedby blue LED light to produce red emission. The color point of the red
light can be ﬁne tuned by varying the CaS:Eu2+:SrS:Eu2+ ratios, printed
phosphor thickness, particle size and morphology.
----- Lunch ----14:00 - 15:35

Room B-2

PRJ4: Solid State Lighting
Chair:
Co-Chair:F. Shevlin, Dyoptyka, Ireland
M. Sakai, Ushio, Japan

PRJ4 - 1:
14:00

Invited Recent Progress in Green and Blue InGaN
Laser Diodes for Projection Display Applications
J. W. Raring, M. C. Schmidt, C. Poblenz, H. Huang,
C. Bai, P. Rudy, J. S. Speck, S. P. DenBaars,
S. Nakamura

LIT

Soraa, USA
We report recent progress for InGaN-based lasers diodes fabricated on
nonpolar/semipolar substrates. In the green, we demonstrate singlemode lasers operating with >3.5% wall-plug-efﬁciency and 190 mW
output power. In the blue, we demonstrate single-mode lasers with>23% wall-plug-efﬁciency and high power lasers operating with >2.5 W
of output power.
PRJ4 - 2:
14:25

Invited Green-to-Yellow Spectral Region CW
Operation of BeZnCdSe Quantum-Well Laser Diodes
S. Tanaka, S. Fujisaki, J. Kasai, S. Tsuji, R. Akimoto*,
T. Hasama*, H. Ishikawa*
Hitachi, Japan*AIST, Japan

Continuous-wave operation in green-to-yellow spectral region wasdemonstrated with BeZnCdSe quantum-well laser diodes. The lasing
wavelength of the fabricated yellow laser diode was 571 nm. Light
output power of the green and yellow laser diode was as high as 50
mW with a low threshold current density.

47

Friday

December 7

PRJ4 - 3
14:50

High Efficiency and Highly Reliable 638 nm Broad
Stripe Laser Diode for Display Applications
T. Yagi, N. Shimada, T. Nishida, H. Mitsuyama,
M. Miyashita
Mitsubishi Elec., Japan638 nm broad stripe laser LD was newly developed. The LD has thelarge optical conﬁnement factor design for high WPE and the windowmirror structure for reliable operation. The LD shows WPE of 35% at
25 C, 44 lm/W, and highly stable operation at 35 C, 550 mW up to
8,000 hours.
PRJ4 - 4L: Invited High-Power, Long-Lifetime Green Laser
15:10
Diodes with Wavelengths above 525 nm Grown on
Semipolar {20-21} GaN Substrates
K. Tasai, H. Nakajima, K. Naganuma, Y. Takiguchi,
T. Hamaguchi, N. Futagawa, K. Yanashima, M. Ikeda,
Y. Enya*, S. Takagi*, M. Adachi*, T. Kyono*, Y. Yoshizumi*,
T. Sumitomo*, Y. Yamanaka, T. Kumano*, S. Tokuyama*,
K. Sumiyoshi*, N. Saga*, M. Ueno*, K. Katayama*,
T. Ikegami*, T. Nakamura*Sony, Japan*Sumitomo Elec. Inds., JapanGaInN-based green laser diodes (LDs) with wavelengths above 525
nm were fabricated on semipolar {20–21} GaN substrates. The LDs
were estimated to have lifetimes of over 5000 h for an optical output
power of 50 mW at a case temperature of 55 C under continuous-wave
operation.
----- Break ----15:50 - 17:20

Room B-2

PH3: Phosphors for Lighting
Chair:
Co-Chair:T.-M. Chen, Nat. Chiao Tung Univ., Taiwan
T. Hisamune, Mitsubishi Chem., Japan

PH3 - 1:
15:50

Invited Progress in Developing High-Power InGaN
LEDs for Illumination
K. Bando
Nichia, Japan

High-power LEDs for general lightings are reviewed. Blue chip withhigh reﬂection structure is shown to have an excellent performance of
743 mW, EQE 77% at 350 mA. White chip exhibits 181 lm/W. New
technology such as phosphor coating on the chip topside andimproving CRI by multi-phosphor system are developed.

48

Friday

December 7

PH3 - 2
16:20

A Phosphor Sheet Providing Wider Color Gamut for
LCDs
Y. Ito, T. Hori, H. Tani, T. Kusunoki, H. Kondo
Dexerials, JapanA phosphor sheet in which thiogallate green and sulﬁde red phosphor
are contained has been developed. Good color gamut performance of
90% NTSC-xy can be realized by a LCD with that. It has moisturebarrier layers on the surface, which can reduce the reaction between
these phosphors and moisture.
PH3 - 3
16:40

Improved Display Color Gamut by Using theb-SiAlON Green Phosphor with an Asymmetric
Emission Spectrum
K. Yoshimura, K. Takahashi, H. Fukunaga, M. Harada,
Y. Tomomura, R.-J. Xie*, N. Hirosaki*, T. Takeda*
Sharp, Japan*NIMS, JapanThe effect of the emission spectrum shape of β-sialon(Si6-zAlzOzN8-z):Eu2+ on the characteristics of liquid crystal display with LED backlightis analyzed. The asymmetric spectrum which enhanced in accordancewith the decrease of z value is clariﬁed to contribute largely to theimprovement of display color gamut.
Si4+and Si4+-N3- Incorporation into YAG:Ce3+ and Its
Verification in Luminous Efficacy and Color
Rendering Enhancement of Phosphor-Converted
White Light-Emitting Diodes

LIT

PH3 - 4
17:00

T.-H. Liu, H.-Y. Kuo, H.-Y. Lin, S.-Y. Chu
Nat. Cheng Kung Univ., Taiwan
This paper demonstrated that the luminous efﬁcacy of the YAG-based
white light-emitting diode was improved from 74.3 to 83.7 lm/W with
substitution of 0.1 mol Si4+ for Al3+ while the color rendering index was
improved from 67.1 to 79.2 with substitution of 0.2 mol Al3+-O2- by
Si4+-N3- under 350 mA.
Author Interviews and Demonstrations
17:30 – 18:30

RECEPTION
Wednesday, December 5, 2012
19:00 – 21:00
Sakura (1F)
Kyoto International Conference Center
See page 12 for details

49

TuesdayDecember 4Workshop on
LC Science and Technologies
Tuesday, December 4
14:20 - 17:20

Event Hall

Poster LCTp1: LC Alignment
LCTp1 - 1

Substitute Effect of Fluorine-Containing Polyimides
on Photo Alignment Characteristics as an
Alignment Layer
S. Sato, H. Ito, T. Mizunuma, K. Nagai, H. Matsumoto,
S. Matsumoto
Meiji Univ., JapanThe substituent effect of ﬂuorine-containing polyimides with
4,4-(hexaﬂuoro-isopropylidene) diphthalic anhydride (6FDA) group on
the photo alignment of the liquid crystal (LC) molecule and the effect of
254 nm linearly polarized ultraviolet (LPUV) irradiation on the chemical
structure were systematically investigated.
LCTp1 - 2

Study of the Adsorption of Isopropyl Alcohol
Solution on Alignment Film Surface Using RealTime in situ AFM
M. Kwak, J. Jeon, S. An, K. Kim, Y. Yi, S. Choi, N. Kim,
B. Kim, D. Kang, Y. Choi, S. Jeon
LG Display, Korea

In order to compare isopropyl alcohol (IPA) adsorption process on thesurface of alignment ﬁlm (AF), it was measured in real time inside of asolution using AFM. And, analysis was done with the use of calcite (1014) face for the dissolving characteristics of liquid crystal (LC)component.
LCTp1 - 3

Fast Response Time Patterned Vertical Alignment
Mode Using Double Step UV Exposure
D.-H. Kim, Y. Kim, J. H. Lee, Y.-J. Lee, C.-J. Yu, J.-H. Kim
Hanyang Univ., Korea

We propose an advanced patterned vertical alignment (PVA) modewith a fast response time through double ultraviolet (UV) exposure to
UV curable reactive mesogen (RM) mixed in alignment layer.
Polymerized RM by the double step UV using a photo-mask produces
a modiﬁed pretilt angle and a high elastic deformation energy.
LCTp1 - 450

Withdrawn

Tuesday
LCTp1 - 5

December 4
Alignment of Anisotropic Micro-Structures in LC
Director Field
G. Nakazawa*, H. Yoshida*,**, K. Tagashira*, M. Ozaki**Osaka Univ., Japan**JST PRESTO, Japan

We investigated the alignment of the anisotropic micro-structuresfabricatedbylaserlithographyinauniformly-aligned
photopolymerizable nematic liquid crystal. We observed the behavior ofstructures by a polarization microscope and found that the structures
rotated spontaneously until the molecular alignment inside thestructure matched to that of the surrounding.
LCTp1 - 6

The Reverse Domain Issue in High PPI Panel
S. L. Lee*, J. H. Lu*,**, X. M. Jiang*, Y. Q. Lee*, C. T. Liao*,
Y. W. Chiu*, T. C. Chung*, T. S. Jen*
*Infovision Optoelect., China**Shanghai Jiao Tong Univ., China

A 3.97-in. WVGA (480 800) normally white (NW) TN-LCD panel has
been developed. A display issue happened when the image changed
from white to black. With the help of simulation tool, the root cause of
the defect is reverse domain. Then some methods are proposed tocover this issue.
LCTp1 - 7

Characterization of LC Alignment with Reactive
Mesogen Doped in Polyimide
C.-C. Hsieh, C.-Y. Chiu, S. Hao, Y. Song, F. Zhao
Shenzhen China Star Optoelect. Tech., China

LCTp1 - 8

Decrease The Reverse Domain in TN-LCD by
Rubbing Process and PI-LC Matching
C. Wang, Z. L. Chen, X. M. Jiang, Y. W. Chiu, C. T. Liao,
D. C. Chung, A. Tsai, T. S. Jen
Infovision Optoelect., China

Contribution of rubbing process and material matching character toreduce reverse domains in twist nematic liquid crystal display (TNLCD) have been investigated. Enhancement rubbing strength andselection polyamic acid (PAA) type polyimide (PI) can increase surface
anchoring energy. Adjusting LC polymer components and doping new
chiral molecule augmented LC elastic energy.

51

LCT

Surface-controlled vertical alignment is an attractive technology. In ourstudy, we use reactive mesogen mixed in polyimide and adopt UV
exposure process to investigate the polymerization and pre-tilt
formation of liquid crystal. The mechanism is explained by morphology
analysis, and the optics and reliability performance are studied.

Tuesday
LCTp1 - 9

December 4
Azimuthal LC Anchoring on Stacked Polyimide
Layers with Overcoating Screening Layer
S.-W. Oh, H. J. Lee, K.-I. Joo, M.-K. Park, K. H. Park*,
J.-H. Lee*, B. K. Kim*, H.-R. Kim
Kyungpook Nat. Univ., Korea*LG Display, Korea

We investigated an azimuthal liquid crystal (LC) anchoring on stacked
SiO2 screening layer, where the underlying polyimide (PI) was rubbed
but the stacked SiO2 layer was not rubbed. As decreasing the thicknessof the SiO2 layer, the azimuthal LC anchoring was increased due tovan-der-Waals interaction of the underlying PI.
LCTp1 - 10

Formation of Alignment Films for N-LC with
Controlled Pre-Tilt Angle by Using Novel ElectroSpray Deposition Method
Y. Kudoh, T. Nakano, Y. Uchida, T. Takahashi
Kogakuin Univ., JapanThe Electro-spray Deposition (ESD) method is known as a ﬁlm forming
method. The ESD technique applied to the pre-tilt control for the LC cell
was proposed by our previous report. In this study, some results, whichwere obtained from further investigation, were reported.
LCTp1 - 11L Influence of Irradiation Condition on
Photoalignment Layer with Polymer Bearing
Photoreactive Side Chain
J. H. Kang, S. Y. Yang, M. I. An, S. Y. Jeong, S. Lee,K. H. Choi, G. J. Shin
Korea Inst. of Ind. Tech., Korea
The retardation of prepared photoalignment ﬁlms with different
polarized UV exposure energy was evaluated for conﬁrming λ/4 =125
nm at 500 nm. Retardation properties are very much dependent on the
UV exposure energy. This result indicated the interchain [2+2]cycloaddition contributes to the enhancement of LC orientation on thephotoalignment layer.
LCTp1 - 12L High Performance Liquid Crystal Photo-Alignementwith Polyimide Based Using Polarized UV
J. Lim, W. Zhao, F. Yang, Y. Ko, H. Jung, J. Park
Chengdu BOE Optoelect. Tech., China
We studied that photo-alignment by photo activity polyimide withpolarized UV using 4.46qHD. Through these experiments, we havefound that photo-alignment has a lower pretilt angle, lower azimuth
angle and higher rubbing density than rubbing process. These results
bring to higher CR than traditional rubbing method.

52

TuesdayDecember 4

LCTp1 - 13L Porous PMMA Films Fabricated by Solution Castingfor PDLC Type LC Devices
T. Nose, T. Ito, H. Makka, R. Ito, M. Honma,
T. Watanabe*, K. Ito*, S. Yanagihara*
Akita Pref. Univ., Japan*Yurikogyo, Japan
Porous PMMA materials can easily be obtained by using ethanol/water
solution. They provide ease in fabrication of bulky LC layer, which isadvantageous for MMW and/or THz application. However, there areserious shrinkage problem. Here, ﬁlm fabrication method isinvestigated to attain extremely thick LC layer by stacking them.
14:20 - 17:20

Event Hall

Poster LCTp2: LC Evaluation
LCTp2 - 1

Evaluation of Azimuthal Anchoring Energy for LC
Device with Low and High Pretilt Angles Equippedwith Color Filter
K. Goda, M. Kimura, T. Akahane
Nagaoka Univ. of Tech., Japan

In this study, the azimuthal anchoring energies using the twisted
nematic liquid crystal cells with low and high pretilt angles equipped
with/without a color ﬁlter are evaluated. The result indicates almost thesame azimuthal anchoring energy between the TN LC cells equipped
with/without a color ﬁlter.
LCTp2 - 2

Comparison of Correlation between Ion Density and
VHR on Real TFT-LCD Panels

LCT

M. Kwak, J. Jeon, S. An, K. Kim, Y. Yi, S. Choi, N. Kim,
B. Kim, D. Kang, Y. Choi, S. Jeon
LG Display, Korea
Amount of moving ions in panel according to process conditions wasmeasured using LCM-3 device which can measure Ion Density of real
TFT-LCD Panel. When Ion Density and VHR were comparatively
evaluated, Ion Density and VHR tendency were the same. Correlationof 0.72 showed a close relationship.
LCTp2 - 3Morphology Investigation of Spectrum andTemperature Effect on Polymer-Stabilized Alignment
Y. Song, F. Zhao, S. Hao, H.-C. Lu, C.-C. Hsieh,
C.-Y. Chiu
Shenzhen China Star Optoelect. Tech., China

We investigated the properties of liquid-crystal device made bypolymer-stabilized method. The alignment uniformity and liquid crystal
dynamics is analyzed with surface morphology. The relationship ofpolymerization process and environmental parameters is unveiled andthe effect on LC molecules behavior caused by UV spectrum andtemperature is explained.
53

TuesdayLCTp2 - 4L

December 4
Reduction of Ion Density in Liquid Crystal-Silica
Nanoparticle Dispersions by High-Voltage-Pulse
Excitation
S.-W. Liao, C.-T. Hsieh*, C.-C. Kuo*, C.-Y. Huang*Nat. Changhua Univ. of Education, Taiwan

We demonstrate an effective method of reducing ion density in thesilica nanoparticle (SN)-doped LC cell by AC high-voltage-pulse
excitation. The director distortion in LCs near the substrate creates alifting force that traps the SNs and ions onto the substrates, markedly
decreases ion density of the cell.
LCTp2 - 5L

Effect of Annealing on Rubbed Polyimide Surface
Studied by Grazing-Incidence X-Ray Diffraction
I. Hirosawa, T. Koganezawa, H. Ishii*
JASRI, Japan*Nissan Chem. Inds., Japan

Experiment by grazing-incidence X-ray diffraction proved that orderingof surface polymers of rubbed polyimide ﬁlm occurred by annealing at
rather low temperature 373 K. In-plane orientation of surface polymers
also became to be more ordered by annealing.
14:20 - 17:20

Event Hall

Poster LCTp3: Display Mode
LCTp3 - 1

Study on Reducing the Light Leakage in Horizontal
Viewing Angle
B. Hai, C.-T. Kang, Y. Dai
Shenzhen China Star Optoelect. Tech., China

In this article, we study the light leakage appearance on dark stateusing single compensation ﬁlm on our PS-VA cell, and we will provide
some improvement methods to reduce the light leakage in horizontal
viewing angle and make the light leakage near to the vertical viewing
angle.
LCTp3 - 2

High Transmittance with Less the Light Leakage
Appearance Use Single Compensation Construction
C.-T. Kang, B. Hai, X. Ye
Shenzhen China Star Optoelect. Tech., China

In this article, we study how to approach less the light leakage
appearance with the construction use single side compensation ﬁlm on
our VA cell both have high transmittance, low module cost design andfeasibility for mass production
LCTp3 - 3

54

Withdrawn

TuesdayLCTp3 - 4

December 4
Improvement of Gray Inversion in ElectricallyControlled Birefringence ModeS. H. Yu, J. H. Kwon, J. S. Gwag
Yeungnam Univ., Korea

In order to improve low contrast ratio of normally white ECB mode andgray inversion of twist nematic mode, a normally black ECB mode ispresented. It is characterized by λ/2 plate and two domain LC structure.
Simulated results show the proposed mode can improve drastically thegray inversion.
LCTp3 - 5

Characteristics on ECB Mode Designed for Phase
Modulation Using New LC Materials
M. Shin, S. Kim, M. Yoon, S. Lee, K. Lim
LG Display, Korea

We analyze response characteristics of new LC materials by using an
ECB mode to realize phase-modulated display. 2π phase retardation
can be induced from differently blended LC materials. We present
current level of LC response speed and suggest the way of blending
nematic LC materials in further research.
LCTp3 - 6

A New Low Power and Wide-Viewing Angle OCBLCD Compensated with A-Plate and C-Plate
I. Fukuda, Y. Sakamoto, T. Ishinabe*, T. Uchida*,**Kanazawa Inst. of Tech., Japan*Tohoku Univ., Japan**Sendai Nat. College of Tech., Japan

LCTp3 - 7

Withdrawn

LCTp3 - 8

Polarization-Dependence on Light Absorption in
Dye-Doped Twisted Nematic LC Mode without
Polarizers
H. J. Lee, S.-W. Oh, M.-K. Park, K.-W. Park, J.-S. Park,
H.-R. Kim
Kyungpook Nat. Univ., Korea

We investigate a liquid crystal (LC) mode without polarizers by using
dye-doped twisted nematic LC (DDTNLC). As decreasing pitch lengthof the DDTNLC, the polarization-dependence in light absorption by the
doped dyes can be effectively reduced due to mode coupling between
the e-mode and the o-mode of an incident light.

55

LCT

A new low power and wide-viewing angle OCB-LCD compensated with
A-plate and C-plate was developed to improve the difﬁculty of the
manufacturing of transﬂective LCD compensated with discotic liquid
crystal ﬁlms. We clariﬁed that wide viewing angle range over 160 wasachieved by optimizing design parameters of the LCD.

TuesdayLCTp3 - 9

December 4
Polymer Stabilization of Reverse Twisted Nematic
LCD with UV Curable LC Monomer
M. Akimoto, N. Atomi, M. Nishitateno, M. Sannomiya,
K. Takatoh, S. Kobayashi
Tokyo Univ. of Sci. Yamaguchi, JapanTo stabilize the unstable conﬁguration of the Reverse Twisted Nematic
LCD, we examine the polymer-stabilization method. It is found that thevertically-aligned polymer wall formed only nearby the cell edge
stabilizes the RTN conﬁguration successfully, without degrading the
LCD performance.
LCTp3 - 10

Fabrication of Coatable Polarizer Based on
Lyotropic Chromonic LC for Flexible Display
S. Yoon, Y. Jeong, H. Yang, M. Lee
Chonbuk Nat. Univ., Korea

Conventional polarizer has some problems such as the difﬁculty of
durability improvement, the complexity on process and the thick ﬁlm.
For this reason, it is unsuitable for ﬂexible display. Consequently, weneed to develop alternative thin ﬁlm polarizers. The best way to satisfy
this objective is the coatable polarizer.
LCTp3 - 11

Withdrawn

LCTp3 - 12L Optimized Materials to Improve Contrast Ratio of
Fringe Field Switching Mode LCDs for Moving
Applications
X. Zuo, X. Xiang, Y. Feng, J. Zhang, J. Lim, Y. Ko,
H. Jung, J. Park
Chengdu BOE Optoelect. Tech., China
Fringe Field Switching (FFS) mode LCDs is very sensitive to rubbing
process, which makes the contrast ratio is not very high. In this paper,
we develop optimized polyimide, rubbing cloth, liquid crystal, and color
resin; such materials could improve the contrast ratio of FFS mode
LCDs for moving applications.
LCTp3 - 13L Color Shift Analysis for Optically Compensated IPS/FFS Mode LCDs
G. Qin, T. Suzuki, K. Kim, Y. Yang, M. Kashima, X. Gu,
J. YouTech. Ctr. BOE Tech. Group, China
A simulation analysis for the color shift in the dark state of the opticallycompensated IPS/FFS mode LCDs has been performed. The
simulation results include a novel compensation scheme with ourunique “Switch-Back” concept for depressing the dark state color shift
in the diagonal directions.

56

TuesdayDecember 4

LCTp3 - 14L Effect of Photoreaction on Photoalignment of
Polymaleimide with Cinnamate Groups
S. Y. Yang, J. H. Kang, M. I. An, S. Y. Jeong, S. Lee,K. H. Choi, G. J. Shin
Korea Inst. of Ind. Tech., Korea
Different spacer length of polymaleimides containing cinnamate groupwere prepared and the controllability of LCs alignment with photoalignmethod were investigated. From DSC and TGA analysis, products wereshown to have thermal stability. Pretilt angles of LCs on the exposured
surfaces were 0~2 , depending on the exposure energy and spacer
length.
14:20 - 17:20

Event Hall

Poster LCTp4: LC Application
LCTp4 - 1

Hybrid-Aligned Dual-Frequency LC Lenses
C.-H. Lin, R.-H. Chiang, C.-H. Chen, I.-M. Jiang,
C.-T. Kuo, C.-Y. Huang*Nat. Sun Yat-Sen Univ., Taiwan*Nat. Changhua Univ. of Education, Taiwan

This work proposes a liquid-crystal lens, which can be controlled
between a positive lens and a negative lens. Additionally, a dielectriceffect occurs between the DFLC and the SR dielectric under thefrequency modulation, enabling the LC lens to exhibit a uniform
response-time distribution than a conventional LC lens.
LCTp4 - 2

Resolution and MTF of Imaging System with LC
Lens as Focusing Element

LCT

M. Ye, B. Wang, M. Uchida, S. Yanase, S. Takahashi,
S. SatoAkita Ind. Tech. Ctr., JapanA liquid crystal lens is installed in front of a camera module as afocusing element. Images of an ISO12233 chart are analyzed. The LClens works well bringing the chart into focus, and no obvious loss inimage quality owing to the using of the LC lens is observed.
LCTp4 - 3

The Applications of ASDDLC for Controlling theDiffraction of Laser Beam
Y.-H. Huang, S.-W. Ko, A. Y.-G. Fuh
Nat. Cheng Kung Univ., Taiwan

This paper demonstrated the research of axially symmetric dye-doped
liquid crystal (ASDDLC). Axially symmetric devices were widely used insymmetric optics, such as converting linear polarized light into axially,azimuthally or vortically light. The novel applications have beenpresented, such as polarization-independent liquid crystal lens andtunable donut beam.
.
57

Tue./Wed.

December 4/5

LCTp4 - 4L

Thermally Manageable Gratings Based on a HybridAligned Cholesteric Liquid Crystal
C. H. Lin, R. H. Chiang, S. H. Liu
Nat. Sun Yat-Sen Univ., Taiwan

This work reports thermally manageable gratings based on a hybridaligned cholesteric liquid crystal. The experiment reveals that theordered stripe of the hybrid-aligned cholesteric grating only exists forthe d/P ratio between 1.5 and 3. Using the hot stage, we then studied
the rotating characteristic of the H-ﬁngerprint grating.

Wednesday, December 5
9:00 - 10:20

Room D

LCT1: LC Semiconductors and Display Modes
Chair:
Co-Chair:

H. Okada, Univ. of Toyama, Japan
M. Suzuki, Merck, Japan

LCT1 - 1:
9:00

Invited High Carrier Mobility of np-Phthalocyanine
LC Semiconductors
Y. Miyake*,**, F. Nekelson*,**, M. Yoneya*, H. Monobe*,
H. Yoshida**, A. Fujii**, M. Ozaki**, Y. Shimizu**AIST, Japan**Osaka Univ., Japan

Homologues of non-peripheral (np) -type phthalocyanine liquid crystals
were studied on the carrier transport properties. These exhibit anambipolar carrier transport with the mobility in the order of 10-1 cm2 V-1
s-1 for the mesophase. Particularly, the hole mobility in the crystal
reaches to 1.5 cm2 V -1 s-1 at RT.
LCT1 - 2:
9:25

Invited Molecular Design and Electronic Functionsof Nanostructured LC Semiconductors
M. Funahashi
Kagawa Univ., Japan

In this paper, we report a molecular design of LC electronic materials
based on nanosegregation. Electrochromic LC molecules consisting ofa p-conjugated system and a ionic moiety, high hole mobility of LC side
chain polysiloxane bearing terthiophene groups, and LC perylene
tetracarboxylic bisimide derivatives bearing oligosiloxane chains are
discussed.

58

Wednesday

December 5

LCT1 - 3L
9:50

Relative Luminance Efficiency of NTN-FSC-LCD
With and Without Doping Nanoparticles
S. Kobayashi, T. Miyama, H. Morita, H. Yoshida,
Y. Shiraishi, H. Sawai, N. Toshima, M. Okita*,
K. Takeuchi**, H. Takatsu**
Tokyo Univ. of Sci. Yamaguchi, Japan*HDT, Japan**DIC, Japan

We suggest an indicator called “Relative Luminance Efﬁciency (RLE)”
for characterizing power consumption efﬁciency of FPD in relation totheir Luminance. And it is shown that the value of RLE of our FSC-LCD
is 4.12. This value may provide a good reference to the Energy Star
Program.
LCT1 - 4L
10:05

Field-Sequential Display Using Electrically
Suppressed Helix Ferroelectric Liquid Crystal
A. K. Srivastava, Y. Ma, V. G. Chigrinov, H. S. Kwok
Hong Kong Univ. of S&T, Hong Kong

The frame frequency of 240 Hz has been demonstrated for the Field
Sequential Color (FSC) based on Electrically Suppressed Helix
Ferroelectric (ESHFLC) E-O mode. The proposed display, at theelectric ﬁeld of 3.33 V/µm, is characterized by the high contrast(10000:1), wide viewing angle and large color triangle (130% of NTSC).
----- Break ----10:50 - 12:10

Room D

Chair:
Co-Chair:Y. Shimizu, AIST, JapanT. Yamaguchi, JNC Petrochem., Japan

LCT2 - 1
10:50

A Fast-Tuning of Bragg Reflection Band in
Cholesteric LCs

LCT

LCT2: New Functional LC Devices

Y. Inoue*, H. Yoshida*,**, H. Kubo*, M. Ozaki**Osaka Univ., Japan**JST PRESTO, Japan

We propose a new tuning method of Bragg reﬂection band with amicrosecond response in cholesteric liquid crystals (ChLCs). The ChLC
device consisted of an anisotropic polymer matrix possessing helicalorder embedded with nanosized pores ﬁlled with a ChLC. The ChLC
composite showed a decay time of 6 µs.

59

Wednesday
LCT2 - 2
11:10

December 5
Relationship Between Refractive Index Distribution
and Electrode Structure in the LC Lens for 3D
Displays
T. Naganuma, S. Oka, S. Komura
Japan Display East, Japan

Relationship between refractive index distribution and the cellparameters in the liquid crystal lens 3D displays is analyzed by using
the liquid crystal alignment simulation. The optimum conditions of a cellgap, an electrode width and a width between electrodes are clariﬁed.
LCT2 - 3
11:30

Index Distribution Analysis of LC Lens with Low
Voltage Drive and Simple Structure Design for 3D
Display Application
K.-T. Huang, Y.-W. Hong, R.-X. Fang, T.-C. Ou,
Y.-T. Chao, C. Lee
HannStar Display, Taiwan

A liquid-crystal-lenticular-lens (LC-lens) with low voltage drive andsimple structure design is proposed for auto-stereoscopic 3D display
application. The LC-lens design parameter will be analyzed and perfectindex distribution can be achieved through simple electrode design withdesired electric ﬁeld across the LC-layer, just likes the effects of GRINlens.
LCT2 - 4
11:50

Fast Switchable 2-D Structure Ferroelectric LC
Grating
Y. Ma, Q. Guo, A. Srivastava, V. G. Chigrinov, H. S. Kwok
Hong Kong Univ. of S&T, Hong Kong

A method for fabrication of 2D Ferroelectric liquid crystal switchable
grating based on photo-alignment technique has been proposed. The
ﬁrst order diffraction efﬁciency is 68% and response time is 69 µs.
Grating can be tuned at the electric ﬁeld of 1.33 V/µm.
----- Lunch -----IDW Best Paper AwardIDW Outstanding
Poster Paper Award
These awards will go to the most outstanding papers
selected from those presented at IDW/AD ’12.
The 2012 award winners will be announced on the
IDW website: http://www.idw.ne.jp/award.html
60

Wednesday

December 5

14:00 - 15:25

Room D

LCT3: Blue Phase
Chair:
Co-Chair:M. Funahashi, Kagawa Univ., Japan
M. Ozaki, Osaka Univ., Japan

LCT3 - 1:
14:00

Invited Progress of Blue-Phase LC Applications
D. Kubota, T. Ishitani, A. Yamashita, T. Nishi, K. Okazaki*,
M. Katayama*, H. Shishido, H. Miyake, J.Koyama,
Y. Hirakata, S. Yamazaki
Semiconductor Energy Lab., Japan*Advanced Film Device, JapanTo apply blue-phase liquid crystals to displays, we have widely studiedmaterials and the like and achieved a saturation voltage of 23 V and acontrast ratio of 1000:1. Further, we have improved the yield andshortened the process time using blue-phase liquid crystals having a
non-platelet-like texture and unclear boundary.
LCT3 - 2
14:25

Polymer-Network Blue Phase Device: Effects ofMonomers
C.-S. Chen, Y.-C. Hsieh, C.-K. Wu, K.- H. Chou,
H.-Y. Chen
Feng Chia Univ., Taiwan

Inﬂuences of the structures of the polymer-network in blue phase on
the thermal stability and the electro-optical response are studied.
Surface morphology of the polymer network is record by SEM. Thermal
stability of polymer-network blue phases is not affected by structure of
the polymer network, but the electro-optical response is.
Relationship Between the Temperature Range andthe Storage Modulus in Polymer-Stabilized Blue
Phase

LCT

LCT3 - 3
14:45

M. Oiwa, S. Takeda*, S. Komura
Japan Display East, Japan*Hitachi, Japan
We present the relationship of temperature range and the storage
modulus as factors of rigidity in polymer-stabilized blue phase (PSBP).
The temperature range enlarges due to the increase in the storage
modulus of PSBP regardless of the reactive monomer material orprocess conditions.

61

Wednesday

December 5

LCT3 - 4
15:05

Unusual Electro-Optical Behavior of WideTemperature Blue Phase II Device
N.-A. Chang, C.-H. Tseng, H.-Y. Chen
Feng Chia Univ., Taiwan

An electro-optical response of a wide-temperature blue phase II cell isdemonstrated in this study. From the reﬂection spectra of the cell, thetemperature range of BPII is about 6 C. After applying an in-plan ﬁeld,
from the reﬂected spectrum, two phenomena are seen: wavelength
shift and wider reﬂection band.
----- Break ----15:50 - 17:10

Room D

LCT4: Wide Viewing Angle and Fast Switching
Chair:
Co-Chair:T. Ishinabe, Tohoku Univ., Japan
M. Inoue, Apple, Japan

LCT4 - 1
15:50

Room-Temperature Optical-Isotropic LCD without
Polymer Network
S.-F. Lu, Y.-C. Hsieh, H.-Y. Chen
Feng Chia Univ., Taiwan

Electrooptical characteristics of an optical-isotropic liquid crystal were
demonstrated. Light transmission and responses at ﬁeld is measured
and contrast ratio, hysteresis phenomenon and residual birefringenceis discussed. Responses do not vary with changing the electric ﬁeld
and do not depend on the temperature, and residual birefringence is
not observed here.
LCT4 - 2
16:10

Novel Pixel Structure in IPS-LCD to Improve
Transmittance Using Wall Electrodes
T. Hiratsuka, O. Itou, D. Sonoda, T. Ishigaki, S. Komura
Japan Display East, Japan

We propose a novel pixel structure in an in-plane switching (IPS) liquid
crystal display (LCD) using wall electrodes whose height is equivalent
to the liquid crystal (LC) layer. Based on simulations and experiments,
we have achieved higher transmittance than conventional IPS-LCDs,
using wall electrodes and pseudo wall electrodes.
LCT4 - 3
16:30

Optimized Pixel Design and LC for Better Process
Margin and Increasing Transmittance in
FFS Technology
W.-H. Chang, H.-W. Cheng, S.-C. F. Jiang, J.-J. Su
AU Optronics, Taiwan

In present paper, overcoming the inevitable process deviation andincreasing the transmittance for FFS mode are investigated. We
redesign a pixel electrode to minimize the optical deviation. Besides,
the LC characteristics were also chosen for maximizing LC optical
efﬁciency. In our result, the transmittance deviation issues are reduced.
62

Wed./Fri.

December 5/7

LCT4 - 4
16:50

Fast LCD Modes
L. Komitov, G. Hegde*
Univ. of Gothenburg, Sweden*Univ. of Malaysia, Malaysia

A sub-millisecond liquid crystal device driven by a fringe electric ﬁeld ispresented. Surface localized polymer network is created in the device
in order to reduce the fall time. Double cell device with both rise and falltimes controlled by the applied ﬁeld is also presented.
Author Interviews and Demonstrations
17:30 – 18:30

Friday, December 7
10:50 - 12:15

Room D

LCT5: Emerging Display Mode
Chair:
Co-Chair:T. Koda, Yamagata Univ., Japan
T. Nose, Akita Pref. Univ., Japan

LCT5 - 1:
10:50

Invited Towards Guest-Host Displays Composed of
LC Dispersions of Plasmonic Metal Nanoparticles
Q. Liu*,**, M. Campbell**, S. He*, I. I. Smalyukh**,****Zhejiang Univ., China**Univ. of Colorado, USA***RASEI, Univ. of Colorado & NREL, USA

LCT5 - 2
11:15

Transparent LC Panel by Dye Doped Liquid Crystal(DDLC) Gel
C.-S. Hsieh, J.-T. Lien, S.-M. Fu
Chunghwa Picture Tubes, Taiwan

In this paper, a polarizer-free dye doped liquid crystal gels intransmission mode are proposed. It has potential in transparent display.
We demonstrate the low driving voltage ~8 V, good contrast ratio ~28:1
and fast response time ~9.8 ms in PDLC cell. Besides, the contrast
ratio of DDLC gel is 13 with response time 20.6 ms.

63

LCT

We demonstrate the bulk self-alignment of dispersed gold nanorods inliquid crystals. This results in a switchable polarization-sensitive
plasmon resonance exhibiting stark differences from that of the same
nanorods in isotropic ﬂuids. The devise-scale alignment and switching
may enable plasmonic polarizers and guest-host displays that utilize
nanoparticles instead of dyes.

Friday

December 7

LCT5 - 3
11:35

A New Polymer Dispersed LC Applied in ActiveMatrix TFT Transparent D isplay
C.-W. Su, J.-T. Lien
Chunghwa Picture Tubes, Taiwan

We have developed a 10.1-in. transparent display based on newpolymer dispersed liquid crystal. It has low driving voltage and it issatisﬁed with active-matrix TFT display. Besides, it applied intransparent display advantages polarizer free, backlight free, and thefabrication process donʼt need polyimide coating and rubbing.
LCT5 - 4
11:55

Scattering Mode LC Light Shutter Based on DoubleSide Poly(N-Vinyl Carbazole) Films
K.-T. Cheng, Y.-D. Chen, A. Y.-G. Fuh
Nat. Cheng Kung Univ., Taiwan

The nematic LC device, fabricated by two substrates coated withuniform PVK ﬁlms, is heated and then cooled, generating the rough
PVK layers onto the surfaces of the substrates. The device having
rough PVK layers, with high electro-optical performances, produces
micron-sized, multiple domains of disordered LCs, and scatters light.
----- Lunch ----14:00 - 15:15

Room D

LCT6: Photo Alignment
Chair:
Co-Chair:S. Ishihara, Osaka Inst. of Tech., Japan
I. Hirosawa, JASRI, Japan

LCT6 - 1
14:00

The World’ s First Photo-Aligned IPS-LCDs for a TV
UseH. Matsukawa, Y. Shimano, M. Suefuji, Y.Umeda,
K. Mimura
Panasonic Liquid Crystal Display, Japan

We applied the photo alignment technology to the IPS mode LCD-TVs
and launched them for the ﬁrst time in the world. Here, we haveinvestigated the relationship between UV irradiation conditions andalignment property of liquid crystal molecules and excellent black
image quality and wide viewing angle characteristics were realized.
LCT6 - 2

64

WithdrawnFriday

December 7

LCT6 - 4L
14:20

Recent Developments in Photoalignment
Technology: Alignment Properties of a Thiophene
Based Bis-Hydrazone Derivative
G. Hegde, S. Abhishek*, A. V. Adhikari**,
K. Vishnumurthy**, M. M. Yusoff, V. G. Chigrinov*,
H. S. Kwok*
Univ. Malaysia Pahang, Malaysia*Hong Kong Univ. of S&T, Hong Kong**Nat. Inst. of Tech. Karnataka, India

Liquid crystal photoalignment on bis-hydrazones derived fromthiophene derivatives is reviewed. Proposed material shows excellentalignment properties which is highly promisable for future applications.
This photoalignment is based on reorientation phenomena attributed tothiophenes.
LCT6 - 3
14:40

The New Analysis Method of Photo-Alignment
Layers via Reflection Spectrometry
C. Huang, T.-C. Lin, M.-D. Lai, Y.-L. Chen
Chunghwa Picture Tubes, Taiwan

Photo-alignment is an advanced aligning technique for LCD, but theanalysis for its coating layer is not easy to do due to no obvious
physical change on the surface. We develop a new reﬂection
spectrometer for analyzing the optical axis orientation of the photoalignment layer and its degree of photo-aligning.
LCT6 - 5L
15:00

Electro-Optical Properties in Polymer Stabilized
Reverse Mode LCD
R. Yamaguchi, K. Goto, X.-J. Chang

A polymer stabilizing effect has been investigated in reverse mode
liquid crystal cells containing a reactive mesogen (RM). When a voltage
was applied during polymerization of RM, a reverse mode driving
voltage reduced. Moreover, a normal mode electro-optical property canbe obtained by polymerizing with high voltage application.
----- Break -----

RECEPTION
Wednesday, December 5, 2012
19:00 – 21:00
Sakura (1F)
Kyoto International Conference Center
See page 12 for details

65

LCT

Akita Univ., Japan

Friday

December 7

15:50 - 17:10

Room D

LCT7: LC Alignment Technology
Chair:
Co-Chair:I. Smalyukh, Univ. of Colorado, USA
S. Shibahara, Sony, Japan

LCT7 - 1:
15:50

Invited Polyimide-Less Alignment by Dendrimers
Dissolved in LC
T. Sakuma, N. Funakoshi, Y. Takahashi, M. Uchida,
T. Koda, O. Haba, K. Yonetake, M. Kwak*, Y. Momoi*,
J. Jeon*, S. An*, D. Choi*, D. Kang*, Y. Choi*, S. Jeon*
Yamagata Univ., Japan*LG Display, Korea

We use dendrimers in combination with liquid crystal display assurfactant agent to induce homeotropic alignment modify. This is done
without special technique, but we should only mix small amount ofdendrimers to conventional liquid crystals. We call this alignment
technique liquid crystal dendrimer alignment (LCDA).
LCT7 - 2
16:15

Study of Polymer Bumps Formation and Influencein PS-VA LCD
X. Zhong, H. J. Huang, X. Ma, C.-S. Li, W. Yu, S.-W. Yeh,
K.-C. Lee
Shenzhen China Star Optoelect. Tech., China

Two different reactive mesogens (RMs) were introduced into polymerstabilized vertical alignment LCD. It is found that the sizes anduniformity of polymer bumps formed by photo-polymerization arestrongly dependent on the initial RMs composition in LC mixture. This
provides us an effective way to control the optical performance of PSVA LCD.
LCT7 - 3
16:35

Study of LC Ripple Caused by Tactile Force Acting
on Display
Y. J. Lee, T. S. Liu, M.-H. Lin*, K.-F. Huang*Nat. Chiao Tung Univ., Taiwan*Chimei-Innolux, Taiwan

Liquid crystal display (LCD) panels subjected to tactile force will show
ripple propagation on screens. The Ericksen-Leslie theory is used toinvestigate ripple propagation that results from liquid crystal moleculetilt. Tactile-force effects are taken into account to derive the molecule
equation of motion for liquid crystals.

66

Friday

December 7

LCT7 - 4L
16:55

Optimal Method to Improve Pressure ResistantCharacteristic for 2-Domain Fringe-Field-Switching
Display
N. Jiang, F. Yang, J. Lim, J. Zhang, Z. Chen, Y. Feng
Chengdu BOE Optoelect. Tech., China

In this paper, we improved pressure resistant characteristic of
2-domain FFS by optimizing 2nd ITO structure and controlling process.
Larger middle corner length and corner angle of 2nd ITO can improvepressure resistant characteristic of 2-domain FFS, and the distance of
1st ITO edge to 2nd ITO is also important.
Author Interviews and Demonstrations
17:30 – 18:30
Supporting Organization:
The Japanese Liquid Crystal Society (JLCS)LCTSID Display Week 2013
May 19-24, 2013
Vancouver Convention Center
Vancouver, British Columbia, Canada

IDW ’13The 20th International Display Workshops
December 4-6, 2013
Sapporo Convention Center
Sapporo, Japan
http://www.idw.ne.jp67

TuesdayDecember 4Workshop on
Active Matrix Displays
Tuesday, December 4
14:20 - 15:45

Room A

AMD1: Organic & Carbon TFT
Chair:
Co-Chair:

M. Kimura, Ryukoku Univ., JapanY. Fujisaki, NHK, Japan

AMD1 - 1:
14:20

Invited Inkjet Printing of Single Crystal Films for
Organic TFTs
H. Minemawari, Y. Noda, T. Yamada, T. Hasegawa
AIST, JapanWe developed "double-shot inkjet printing" that combines the techniqueof antisolvent crystallization with the microﬂuidic inkjet printing
processes. We found that the sequential deposition of an antisolvent
and a semiconductor solution can trigger the controlled formation of
exceptionally uniform thin ﬁlms, yielding organic thin-ﬁlm transistors
with high carrier mobilities.
AMD1 - 2:
14:45

Invited New Generation of Flexible GHz Graphene
Transistor
H. Happy*, C. Sire, F. Ardiaca, S. Lepilliet*, J.-W. T. Seo**,
M. C. Hersam**, G. Dambrine*, V. Derycke
IRAMIS, France*IEMN, France**Northwestern Univ., USA

Flexible electronics mostly relies on organic semiconductors. But thelimited carrier velocity in molecular ﬁlms prevents their use at
frequencies above a few megahertz. In this work, we conducted theﬁrst study of solution-based graphene transistors, with current gain
cutoff frequencies of 2.2 GHz.
AMD1 - 3
15:10

Quantitative Extraction of Contact Resistance atOrganic Semiconductor − Metal Electrode Interface
and Impact of Treatment on the Contact Resistance
K. Sasai, Y. Okumoto, A. Miyamoto, K. Morita,
Y. Fujisaki*, T. Yamamoto*
Panasonic, Japan*NHK, Japan

Contact resistance at the organic semiconductor (OSC) – metalelectrode interface has been successfully estimated by transmission
line method and AFM potentiometry. We have found that contact
resistance of source edge was drastically reduced by surface treatment
of UV/ozone or thiol self-assembled monolayer (SAM) before OSC
fabrication at the ﬁrst time.
68

TuesdayDecember 4

AMD1 - 4L
15:30

Integrated Potentiostat Using TFTs with
Electrochemical Cell - Optimization of Detection
Parameters Y. Sagawa, K. Setsu, Y. Ito, Y. Ono, M. Kimura
Ryukoku Univ., Japan

We have developed an integrated potentiostat using TFTs with anelectrochemical cell and optimized detection parameters. The waitingtime is optimized to 2 min, and the sweep speed is optimized to 0.2
mV/s. Using these detection parameters, it was conﬁrmed that the
integrated potentiostat can detect a glucose concentration as low as 2
mM.
----- Break ----16:15 - 17:35

Room A

FLX1/AMD2: Flexible Active Matrix Devices
Chair:
Co-Chair:H. Maeda, DNP, Japan
H. Happy, IEMN, France

FLX1/
AMD2 - 1:
16:15

Invited Transfer Printing Nanowire Electronic Devices
on Non-Si Substrates
C. H. Lee, X. Zheng
Stanford Univ., USAI will discuss various transfer printing methods that can fabricate
electronic devices onto diverse nonconventional substrates, such as
paper, plastics, tapes, glasses, polydimethylsiloxane, Al foils, andpolymer substrates. These ﬂexible, transparent, ultrathin, or
biocompatible devices will impact many technologies, such as ﬂexible
displays, solar cells, and biosensors.
FLX1/
AMD2 - 2
16:40

Solution-Processed and Low-Temperature ZnOBased N-Channel TFTs on Polyethylene Naphthalate
Foil, Suited for Hybrid Complementary Circuitry*imec, Belgium**Katholieke Univ. Leuven, Belgium***Evonik Inds., Germany****Holst Ctr., the Netherlands

State-of-the-art solution-processed ZnO-based n-TFTs (µsat~ 0.6-1.1
cm²/Vs and Ion/Ioff~107) at 160 C are realized on polyethylene
naphthalate (PEN) foil, demonstrating promising uniformity and biasstress results (ΔVth~0.8 V after 104 s). The threshold voltage of 3 V
makes the technology favorable for hybrid complementary line-drive
circuitry at the borders of ﬂexible AMOLED displays.

69

AMD

M. Rockelé*,**, M. Nag*,**, T. H. Ke*, S. Botnaraş***,D. Weber***, D.-V. Pham***, J. Steiger***, S. Steudel*,K. Myny*,**, S. Schols*, B. van der Putten****, J. Genoe*,
P. Heremans*

Tue./Wed.

December 4/5
Formation of Polycrystalline Silicon Films on Plastic
Films by Underwater Laser Annealing at Super
Low-Temperature

FLX1/
AMD2 - 3
17:00

E. Machida*, M. Horita*,**, Y. Ishikawa*,**, Y. Uraoka*,**,T. Okuyama***, H. Ikenoue*****Nara Inst. of S&T, Japan**JST, Japan***TOYOBO, Japan****Kyushu Univ., Japan

We succeeded in the super low-temperature crystallization to highquality poly-Si ﬁlms on plastic substrates by underwater laser
annealing (WLA). WLA enhances the energy margin twice as high asthat in laser annealing in air (LA). Moreover, the crystallinity of WLA
poly-Si was much better than that of LA poly-Si.
Solution-Processed Organic Thin-Film Transistors
on a Very Thin Transparent Paper Substrate

FLX1/
AMD2 - 4L
17:20

Y. Fujisaki, H. Koga*, Y. Nakajima, M. Nakata, H. Tsuji,
M. Nogi*, T. Yamamoto
NHK, Japan*Osaka Univ, Japan

We fabricated solution-processed organic thin-ﬁlm transistors (TFTs)
on a transparent paper. A 20-nm thick cellulose nanoﬁbers ﬁlm wasused as the novel ﬂexible substrate. The TFT showed the mobility up to1 cm2/Vs. These results showed possibility toward the realization of
paper electronics & display with low-cost and low environmental
burden.
Author Interviews and Demonstrations
17:50 – 18:50

Wednesday, December 5
9:00 - 10:30

Room A

AMD3: Oxide TFT: Materials & Devices
Special Topics of Interest on Oxide TFT
Chair:
Co-Chair:

H. J. Kim, Yonsei Univ., Korea
N. Morosawa, Sony, Japan

AMD3 - 1:
9:00

Invited Present Status, Knowledge and Issues of
Oxide S emiconductor Technology
T. Kamiya, K. Nomura, H. Hosono
Tokyo Inst. of Tech., Japan

Oxide semiconductors have been studied very intensively from late ʼ90,
and the ﬁrst commercial product of oxide TFT appeared in this March.
This paper reviews the present status and new applications of oxide
semiconductors with main focus on amorphous oxide semiconductor.
Then, we will discuss clariﬁed knowledges and remaining issues.
70

Wednesday

December 5

AMD3 - 2
9:25

High Performance AOS-Based Offset TFTs for
Kickback Voltage Reduction
M. Mativenga, D. H. Kang, Y. S. Ahn, J. Jang
Kyung Hee Univ., Korea

This paper shows that amorphous-oxide-semiconductor (AOS)-basedthin-ﬁlm transistors (TFTs) with drain- and/or source-offsets perform
much better compared to Si-based offset TFTs in literature. Attributesof AOS-based offset TFTs include improved stability, high on-currents,
independence of threshold-voltage from offset-length, and possibility
for kickback-voltage reduction in active-matrix display applications.
AMD3 - 3
9:45

Effects of Multi-Gates on Performance and Stabilityof Self-Aligned Coplanar a-IGZO TFTs
J. U. Han, D. H. Kang, J. Jang
Kyung Hee Univ., Korea

We studied the effects of multiple gates on the performance andstability of a-IGZO TFTs. The subthreshold region of transfer
characteristics shift to negative gate voltage direction with increasinggate number, and the threshold voltage shift induced by positive gatebias stress decreases with increasing gate number.
AMD3 - 4:
10:05

Invited High Mobility Zinc Oxynitride (ZnON) BasedThin-Film Transistors (TFTs) for Display
Applications
J. S. Park, H.-S. Kim, T. S. Kim, K. S. Son, J.-B. Seon,
S.-J. Seo, S.-J. Kim, M. Ryu, S. Lee
Samsung Advanced Inst. of Tech., Korea

The fabrication of thin-ﬁlm transistor devices incorporating active
semiconductors based on zinc oxynitride (ZnON) compounds ispresented. Devices with ﬁeld effect mobility values exceeding 50 cm2/
Vs are routinely achieved, which makes them suitable as switching or
driving elements in next generation ﬂat panel displays.

10:50 - 12:20

Room A

AMD4: Oxide TFT: Applications
Special Topics of Interest on Oxide TFT
Chair:
Co-Chair:

H. Yamaguchi, Toshiba, Japan
H. Kumomi, Tokyo Inst. of Tech., Japan

71

AMD

----- Break -----

Wednesday
AMD4 - 1:
10:50

December 5

Invited Ultra Definition 240 Hz 55-in. LCD TV Driven
by 1G1D with Oxide Semiconductor TFTs & Copper
Signal Lines
N. Gong, C. Park, J. Lee, I. Jeong, H. Han, J. Hwang,
J. Park, U. Chung, K. Park, H. Jeong, Y. Ha, W. Shin,S. YeoLG Display, Korea

We have implemented a 240 Hz 55-in. ultra deﬁnition (UD, or
3840x2160) resolution TV panel using amorphous IGZO TFT. Among
various data driving architectures, the data single 1G1D driving renders
cost beneﬁt, process competitiveness and design ﬂexibility. So wesuggest a-IGZO TFT and copper metallization technology as a solution.
AMD4 - 2:
11:15

Invited Ultra High-Definition Amorphous-IGZO
Liquid-Crystal Display
B.-L. Yeh, C.-N. Lin, H.-K. Tseng, I.-P. Chien, C.-C. Wu,
C. H. Huang, C.-M. Chang, W.-C. Tsai, C.-H. Chen
AU Optronics, Taiwan

ES type IGZO TFT with different IGZO back channel treatment wasstudied to improve TFT stability. A modiﬁed ES process ﬂow wasdeveloped to improve IV uniformity. Ultra-high deﬁnition 3840x2160 65in. liquid-crystal display with IGZO TFT was also fabricated and PNBTS< I3I V; Vth U% < 2 V was achieved.
AMD4 - 3:
11:40

Invited Amorphous Oxide Semiconductor Thin Film
Transistor for Novel Device Applications
S. Jeon*,**, I. Song*,**, S.-E. Ahn*,**, C. I. Kim*,**,
U.-I. Chung*,***Samsung Advanced Inst. of Tech., Korea**Samsung Elect., Korea

Among various semiconductor devices, electronically active oxide thinﬁlm transistors (TFTs) have received considerable attention for a wide
range of device applications. In this presentation, we review various
device applications utilizing amorphous oxide semiconductor TFT,
which include photo-sensor, image sensor and other device
applications.
AMD4 - 4L
12:05

Novel Fabrication Method for Self-Aligned BottomGate Oxide TFTs
M. Nakata, H. Tsuji, Y. Fujisaki, H. Sato, Y. Nakajima,
T. Takei, T. Yamamoto
NHK, Japan

We have developed a novel fabrication method using excimer laser
irradiation for self-aligned bottom-gate oxide thin-ﬁlm transistors(TFTs). Irradiation from the back-side of the substrate using the gateelectrode as a mask reduces resistance in InGaZnO (IGZO) ﬁlms
sufﬁciently for their application as source/drain regions in bottom-gate
IGZO-TFTs.
----- Lunch ----72

Wednesday

December 5

14:00 - 15:25

Room A

AMD5: Oxide TFT: Solution Process
Special Topics of Interest on Oxide TFT
Chair:
Co-Chair:J. S. Park, Samsung Advanced Inst. of Tech., Korea
H. Hamada, Panasonic, Japan

AMD5 - 1:
14:00

Invited New Approaches for High Performance andMulti-Functional Solution-Processed Oxide TFT
Technologies
H. J. Kim
Yonsei Univ., Korea

In this study, new approaches for high performance and multi-functional
solution-processed amorphous oxide semiconductor (SAOS) thin-ﬁlm
transistors (TFTs) are presented: a multi-stacked active layer structure
for highly stable SAOS TFT, a self-patternable SAOS TFT (both active
layer and source/drain electrodes), and DNA detection using SAOS
TFT.
AMD5 - 2
14:25

Solution-Processed Amorphous In2O3-Based TFT
Performance Depending on the Semiconductor Film
Morphology
S. Botnaraş*,**, D. Weber*, D.-V. Pham*, J. Steiger*,R. Schmechel***Evonik Inds., Germany**Duisburg-Essen Univ., Germany

The morphology of solution-processed amorphous In2O3-based thinﬁlms annealed at 350 C was investigated. The semiconductor solutions
were provided by Evonik Industries AG. By increasing the smoothnessof the semiconductor thin ﬁlm it is possible to improve the fabricatedTFTs, achieving mobilities above 15 cm²/Vs and higher gate bias stressstability.
Effects of Zr Doping on the Performance of
Solution-Processed InZnO Thin-Film Transistors

AMD

AMD5 - 3
14:45

S.-Y. Liu, B.-Y. Su, P.-C. Kao*, S.-Y. Chu
Nat. Cheng Kung Univ., Taiwan*Nat. Chiayi Univ., Taiwan
Thin-ﬁlm transistors with zirconium doping on the indium-zinc oxide asactive layer by the solution-processed deposition method were
fabricated and their TFT characteristics were examined. The solutionprocessed ZrInZnO ﬁlms show high transmittance over 90% in thevisible region and good electrical characteristic of Ion / Ioff ratio current
over 105.

73

Wednesday

December 5

AMD5 - 4
15:05

Effects of Solution-Processed Al2O3 Gate Insulator
Thickness on IGZO TFTs
S.-M. Song, J.-S. Lee, D.-W. Kang, J.-Y. Kwon*, M.-K. Han
Seoul Nat. Univ., Korea*Yonsei Univ., Korea

We fabricated IGZO TFTs employing solution-processed Al2O3 gateinsulator with various thicknesses. Leakage current density of Al2O3
ﬁlms decreased exponentially and dielectric constant decreased withincreasing insulator thickness. When the insulator thickness was 230
nm, the TFT showed 9.00 cm2/Vs of saturation mobility and 3.4 V of thethreshold voltage.
----- Break ----15:50 - 17:20

Room E

INP3/AMD6: Touch Panel (2)Chair:
Co-Chair:T. Nakamura, Japan Display Central, Japan
H. Katoh, Sharp, Japan

INP3/
AMD6 - 1:
15:50

Invited Newly Developed In-Cell Capacitive Touch
Panel Technology in a Wide Viewing Angle IPS-Mode
Display
K. Noguchi, Y. Kida, K. Ishizaki, K. Azumi, H. Mizuhasi
Japan Display West, Japan

This paper is a presentation of a 4.0-in. qHD (960 540) IPS-mode
LTPS display with a newly developed In-cell mutual capacitive touchtechnology. The panel has higher touch scanning speed of 120 Hz andnewly developed touch scanning circuit for narrow dead band on a LCD
glass.
INP3/
AMD6 - 2
16:15

A Novel Design of Capacitive In-Cell Touch Sensor
Circuit Using a-Si TFT
C.-T. Hsieh, S.-K. Hsu
Chimei-Innolux, Taiwan

This paper proposes an In-cell touch sensor circuit with the thresholdvoltage compensated method for active matrix displays by using thea-Si TFT. According to the simulation results, the novel touch sensor
circuit is effectively against the variation of threshold voltage andimproved the reliability of in-cell touch sensor circuit.

74

Wed./Thu.
INP3/
AMD6 - 3:
16:35

December 5/6
Invited In-Cell Projected Capacitive Touch Panel
Technology
Y. Sugita, K. Kida, S. Yamagishi
Sharp, JapanWe describe an In-Cell Projected Capacitive Touch Panel in a display
using IGZO TFT technology. The prototype demonstrates high signalto-noise ratio (SNR) and pen input operation. The possibility ofenlarging the display size beyond current limits makes this a highly
promising approach for In-Cell Capacitive touch panels.
Active Photo-Sensing Array of Thin Film Transistor
with Threshold Voltage C ompensation

INP3/
AMD6 - 4
17:00

L.-S. Chou, H. M. Chen, B.-C. Chen, J.-Y. Zhang,
Y.-H. Tai, I. Chan*, M.-H. Yeh*Nat. Chiao Tung Univ., Taiwan*ITRI, Taiwan

In this paper, an active photo-sensing ampliﬁer pixel circuit withcompensation function of device variation is proposed, which has highaperture ratio since only 3 TFTs are used. The compensation functionof the circuit obviously improves the sensing error resulted from device
variation from 80% to 6%.
Author Interviews and Demonstrations
17:30 – 18:30

Thursday, December 6
9:20 - 12:20

Event Hall

Poster AMDp1: Oxide TFT
Special Topics of Interest on Oxide TFT
Withdrawn

AMDp1 - 2

A Study of Degradation Mechanism about BiasTemperature-Illumination Instability in a-IGZO TFTs
H. Choi, D. Y. Park, J. W. Baek, S. J. Yu, S. H. Jeon
LG Display, Korea

We have investigated the degradation mechanism of threshold voltage
shift(ΔVth) of a-IGZO TFTs induced by bias-temperature-illuminationstress. Under positive bias stress, charge trapping induced temperature
is progressively the dominant mechanism. The ΔVth by negative bias
stress is dependent on the thermal-induced / photo-generated holetrapping caused by temperature and illumination.

75

AMD

AMDp1 - 1

Thursday
AMDp1 - 3

December 6
The Effect of Annealing Temperature in SolutionProcessed In-Ga-O Thin-Film Transistors
D. H. Yoon, H. S. Lim, S. J. Kim, J. Jung, H. J. Kim
Yonsei Univ., Korea

As the annealing temperature increased from 200 to 300 C, the InGa-O (IGO) thin-ﬁlm transistors (TFTs) showed enhanced
performances for switching devices. The annealing temperature above
350 C caused the IGO TFT excessively conductive, and it was
attributed to the crystallization of IGO thin-ﬁlm.
AMDp1 - 4

Investigation on Effects of Composition on
Transparent Aluminum Zinc Tin Oxide Thin-Film
Transistors
C.-S. Fuh, L.-F. Teng, Y.-S. Fan, C.-H. Chang, P.-T. Liu
Nat. Chiao Tung Univ., Taiwan

We investigated on electrical performance of amorphous Al-Zn-Sn-O
thin ﬁlm transistor (AZTO TFT). The mobility enhanced while theconcentration of Sn increased. The improved stability can be attributed
to the increase of Sn concentration and enhancement of bonding
energy of metal ion with the increase of O2 gas ﬂow rate.
AMDp1 - 5

High Performance Inverter with a-IGZO-Based
Resistor Load and Self-Aligned Coplanar a-IGZO
Driving TFT
D. Geng, D. H. Kang, M. J. Seok, M. Mativenga, J. Jang
Kyung Hee Univ., Korea

We demonstrate an inverter implemented with a coplanar amorphousindium-gallium-zinc-oxide (a-IGZO) driving thin-ﬁlm transistor (TFT)
and an a-IGZO-based resistor load. The inverter has larger voltage
gain and wider swing range compared to inverters employing
enhancement mode TFTs as load, making it applicable to high speed
logic gates and other simple circuits.
AMDp1 - 6

New IGZO-Based Oxide Semiconducting Material
for Back Channel Etch Type Thin Film Transistor
S. Morita, K. Hirose, A. Hino, H. Goto, T. Kugimiya,
E. Kusumoto*
Kobe Steel, Japan*Kobelco Res. Inst., Japan

We have developed a new IGZO-based oxide semiconducting material
for back channel etch (BCE) type thin ﬁlm transistor. It is demonstrated
that the TFTs using the new oxide semiconducting material with highchemical stability for conventional etchant possesses better
performance compared with that of conventional IGZO TFT with BCE
structures.

76Thursday

December 6

AMDp1 - 7

Analysis of Electronic-Structural Change in
a-InGaZnO by High Pressure Water Vapor Annealing
Y. Ueoka, N. Maejima, H. Matsui, F. Matsui, M. Morita,
S. Kitagawa, M. Fujita, K. Yasuda, H. Yamazaki,
S. Urakawa, M. Horita, Y. Ishikawa, H. Daimon, Y. Uraoka
Nara Inst. of S&T, JapanThe effect of high pressure vapor annealing (HPV) for a-IGZO wasinvestigated by angle-resolved XPS. We found that In HPV enable tooxidize In atoms and reduce Ga atoms. It is considered that highchannel mobility and stability attribute these reactions.
AMDp1 - 8

The Comparison of Lithium Doping Impact to
Solution-Processed ZnO/InZnO Thin Film
Transistors Characteristics
Y. W. Wang, P. H. Fang, A. C. Cheng, W. C. Su, P. R. Lin
Nat. Changhua Univ. of Education, Taiwan

We report the impact of lithium doping to ZnO/InZnO thin ﬁlm
transistorsʼ electrical and optical characteristics. A best device withmobility ~0.94 cm2/Vs, and an on/off current ratio over 106 wereachieved. Further, the high ionization energy of lithium (5.39 eV) led
the transistor stabilizer than which without lithium doping.
AMDp1 - 9L A Method to Increase the Reflectivity ofTransflective LCDs
S. Huo, W. Jiang
Shanghai Tianma Micro-Elect., China
We have provided a new transﬂective liquid crystal displays which has
a novel structure to broaden the reﬂective area in one pixel. By making
the reﬂector cover the interval area between the adjacent pixels, almost
all of the pixel area is effective display part. So the reﬂectance isimproved largely.

AMD

AMDp1 - 10L Oxide TFT Wired MUX Circuit for Dual Mode Shift
RegisterE.-J. Song, H. Nam
Kyung Hee Univ., Korea
This paper demonstrates a wired MUX circuit for an oxide TFT dual
mode shift register which supports two scanning pulses of different
timings and pulse widths at one gate line. This integrated MUX
guarantees the rail-to-rail output voltage over the threshold voltage
variation from –4 V to 5 V.

77Thursday

December 6

AMDp1 - 11L Electrical Degradation Behavior of a-InGaZnO
Thin-Film Transistors with Sm2O3 Gate Dielectrics
F.-H. Chen, J.-H. Liu, S. Mondal, B.-L. Wu, T.-M. Pan
Chang Gung Univ., Taiwan
We investigate the electrical degradation behavior in amorphousInGaZnO (a-IGZO) thin-ﬁlm transistors (TFTs) with Sm2O3 gate
dielectrics. The negative shift of threshold voltage in Sm2O3 a-IGZO
TFTs can be attributed to the generation of extra electrons from oxygen
vacancies in the a-IGZO channel.
9:20 - 12:20

Event Hall

Poster AMDp2: Active-Matrix Devices
AMDp2 - 1

Device Performance ofBenzothienobenzothiophene-Based Top-Gate
Organic Field-Effect Transistors with Embedded
Electrodes
Y. Kimura, F. Mochizuki, T. Nagase, T. Kobayashi,
K. Takimiya*, M. Ikeda**,***, H. Naito
Osaka Pref. Univ., Japan*Hiroshima Univ., Japan**Nippon Kayaku, Japan***Kyushu Univ., Japan

We have fabricated 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene(C8-BTBT)-based top- gate organic FETs with embedded source-drainelectrodes and investigated the effect of the planarization of C8-BTBT
layers. Top-gate C8-BTBT FETs with embedded electrodes show better
electrical performance and smaller device-to-device variation incharacteristics as compared to top-gate FETs with a conventional
electrode conﬁguration.
AMDp2 - 2

Charge Transport in S olution-Processed Top-Gate
Organic Thin-Film Transistors with Different Gate
Insulators
K. Takagi*, T. Nagase*,**, T. Kobayashi*,**, H. Naito*,***Osaka Pref. Univ., Japan**Res. Inst. for Molecular Elect. Devices, Japan

Charge transport in top-gate OTFTs using solution-processable
polycrystalline and amorphous semiconductors with different polymer
gate insulators is investigated. Unlike amorphous OTFTs,
polycrystalline OTFTs exhibit high ﬁeld-effect mobility irrespective ofthe dielectric constant of gate insulators, due to the suppression of
dipole disorder. Electrical stability under gate-bias stress is alsostudied.

78

Thursday
AMDp2 - 3

December 6
Temperature Sensor Employing 1-Transistor
1-Capacitor Circuit Consisting of p-Type Poly-Si
Thin-Film Transistor
T. Mukuda*, J. Taya*, A. Nakashima*, M. Kimura *,**,****Ryukoku Univ., Japan**Joint Res. Ctr. for S&T, Japan***High-Tech Res. Ctr., Japan

We propose a temperature sensor employing a 1T1C circuit consistingof a p-type poly-Si TFT. The temperature detection using thetemperature dependence of the subthreshold current of the TFT is
conﬁrmed. The temperature more than from –10 C to 100 C can bedetected using the temperature sensor.
AMDp2 - 4

Suppression of Atom-Migration Effect and Recovery
by SR Soft X-Ray Irradiation
T. Fukuoka, A. Heya, N. Matsuo, Y. Haruyama, K. Kanda,
T. Noguchi*
Univ. of Hyogo, Japan*Univ. of the Ryukyus, JapanThe low-temperature activation and the suppression of anomalous
diffused B by using SR soft X-ray were investigated for ultra shallow
junction. The transient enhanced diffusion due to the interstitial B
clusters can be suppressed by using soft X-ray.
AMDp2 - 5

High-Performance and Low-TemperatureCompatible Solid Phase Crystallized Polycrystalline
Silicon Thin Film Transistors U sing Thermal Oxide
Buffered Aluminum Oxide as Gate Dielectric
M. Zhang, W. Zhou, R. Chen, J. Ho, M. Wong,
H.-S. Kwok
Hong Kong Univ. of S&T, Hong Kong

AMDp2 - 6

Design of Vcom Driver Circuit with Poly-Si
Technology for TFT-LCD Applications
C.-C. Hung, M.-H. Cheng, C.-D. Tu, C.-L. Lin
Nat. Cheng Kung Univ., Taiwan

This paper presents a Vcom driver circuit with a gate driver circuit
which can provide a constant voltage swing and improve the power
consumption for TFT-LCDs. The output waveform of gate driver circuit
is stable and the maximum error of storage voltage in pixel is 0.22 V.

79

AMD

High-performance and low-temperature-compatible solid phasecrystallized polycrystalline silicon thin ﬁlm transistors using thermaloxide buffered aluminum oxide (Al2O3) as gate dielectric aredemonstrated. By growing a thermal oxide buffer layer using two-stepannealing method, the interface quality is greatly improved, resulting in
excellent device performance.

Thursday

December 6

AMDp2 - 7

Electrical Characterization of Nitrogen-Excess SiNx
Films Deposited by Surface Wave Plasma Chemical
Vapor Deposition
K. Yagi, T. Okada, T. Noguchi, K. Azuma*
Univ. of the Ryukyus, Japan*Shimadzu, Japan

SiNx ﬁlm with excess-nitrogen was formed using the newly designed
SWP-CVD at low temperature on Si-wafer. Low leakage of 1.25 10-9
A/cm2 was comparable with that of a thermal oxidation ﬁlm. The
nitrogen-excess SiNx ﬁlm is expected to be applied as an improved
gate insulator in high performance Si-TFTs on panel.
AMDp2 - 8

Proposal of µ-Poly Si Film Structure with High
Photo-Sensitive PIN-Diode for Advanced FPD
K. Sugihara, S. Chinen, H. Goga*, K. Shirai, T. Okada,T. Noguchi
Univ. of the Ryukyus, Japan*Okinawa Scale Inspection Office, JapanA new structure for PIN-diode using µ-poly Si ﬁlm is proposed. Afterhydrogenation of µ-poly Si ﬁlm formed by BLDA, remarkable photoconductivity appeared. By optimizing the layer structure, the photoconductivity in red region was enhanced. The newly proposed micrograin structure is expected to be applied to AM-OLED on ﬂexible panel.
AMDp2 - 9

The Latest IPS Pixel Structure Suitable for High
Resolution LCDs
K. Ono, I. Hiyama
Panasonic Liquid Crystal Display, Japan

A pixel structure named IPS-Pro-Next which realizing drastic reductionof power consumption has been proposed. The structure has a functionof the transparent common electrode covering the TFT wirings via an
insulating ﬁlm. The superiority has been conﬁrmed by developing 20-in.
diagonal LCDs with a resolution of 4K2K.
AMDp2 - 10 The Impact of Polarity Inversion on Interlace Image
Sticking at ADS-Mode
Y. T. Yang, H. Z. Liang, D. Q. Zhang, Y. B. Lee, G. Y. Tian,
Y. B. Xu, S. K. Lee
Hefei BOE Optoelect. Tech., China
This paper introduces a kind of image sticking caused by interlace
scanning in the television system at ADS Mode. The relation between
the line image sticking and polarity inversion has been studied. The
results indicate that special polarity inversion have good characteristic
for interlace image sticking.

80Thursday

December 6

AMDp2 - 11 A Novel Coupled Charge-Shared Structure on
Polymer Sustained Alignment Mode
T.-L. Ting, Y.-C. Wu, K.-C. Tien, C.-H. Liao, W.-H. Hsu,
J.-J. SuAU Optronics, Taiwan
We propose a novel LCD mode with the coupled charge-sharedpolymer sustained alignment mode (CCS PSA). CCS PSA controls the
sub-pixel voltages by a combination of the capacitance-coupled
method and the charge-shared method. This novel mode has thefeatures of low color washout and small pixel-to-pixel parasitic
capacitances.
AMDp2 - 12 An Application of New TFT Driving Method for 47-in.
Diagonal IPS LCDs with Resolutions of QFHD and
FHD
R. Oke, T. Nakai, G. Toshima, D. Kajita, J. Maruyama,
Y. Ooishi, T. Kobayashi, I. Mori, I. Hiyama
Panasonic Liquid Crystal Display, Japan
A driving to improve charging performance of LCDs driven by a-Si
TFTs has been developed. The charging time was divided into two
periods, and the voltage in the ﬁrst period was adjusted. The effect was
successfully conﬁrmed by observing images of a QFHD IPS LCD
driven at 240 Hz.
AMDp2 - 13 Development of 5 µm-Pixel Pitch Active-Matrix forTransmissive LCD Picoprojector
F. Templier, U. Rossini, J. S.-Puchades, L. Clerc,
T. Flahaut, D. Sarrasin, V. Larrey, H. W.-Alause*,
J. Marty*
CEA LETI, France*STMicroelect., France

AMDp2 - 14 A Low Power Consumption Level Shifter Using
LTPS-TFT
M. Yamashita, M. Yoshida
Tokai Univ., Japan
In this paper, we propose a low power consumption level shifter using
LTPS-TFT. By simulation results, it is veriﬁed that the power
consumption of the proposed level shifter can be reduced up to 54%,
compared to that of the previously reported capacitive coupling typelevel shifter.

81

AMD

Development of transparent active-matrix for picoprojector with 5 µm
color-pixel pitch has been shown. Transfer on glass of pre-processed
SOI wafer, followed by silicon grinding and post-process on glass has
been achieved. This process seems to be very suitable for the
fabrication of high-resolution picoprojectors with transmissive LCDs.

Thursday

December 6

AMDp2 - 15L Magnetic Area Sensor Using Poly-Si Micro Hall
Devices - Working Confirmation of Actual Operation Y. Yamaguchi*, D. Tadokoro*, T. Segawa*, H. Hashimoto*,
M. Kimura*,**,****Ryukoku Univ., Japan**Joint Res. Ctr. for S&T, Japan***High-Tech Res. Ctr., Japan

We have developed a magnetic area sensor using poly-Si micro Halldevices and conﬁrmed the actual operation. We put the magnetic area
sensor on a neodymium magnet and succeeded in ﬁnding the locationof the neodymium magnet. This result indicates that the magnetic area
sensor is available for practical use.
AMDp2 - 16L A Model for Photo-Induced Threshold Voltage Shiftin a Transistor Based on a BTBT Derivative
I. Fujieda, T. Hoshino, T. Hanasaki
Ritsumeikan Univ., Japan
Light irradiation on a p-type transistor based on a [1]benzothieno[3,2-b]benzothiophene (BTBT) derivative resulted in a positive thresholdvoltage shift. The shift was slowly reversed when the device was stored
under dark. This behavior is ﬁt by a model assuming meta-stable stateswith two decay constants.
----- Lunch ----14:00 - 15:15

Room A

AMD7: Oxide TFT: Reliability
Special Topics of Interest on Oxide TFT
Chair:
Co-Chair:T. Kamiya, Tokyo Inst. of Tech., Japan
M. Hiramatsu, Japan Display Central, Japan

AMD7 - 1
14:00

Instability of Light Illumination Stress on
Amorphous InGaZnO Thin Film Transistors
S. Park, E. N. Cho, I. Yun
Yonsei Univ., Korea

In this paper, the effects of the different wavelengths of the light underboth positive and negative VGS stress on Amorphous InGaZnO Thin
Film Transistors are investigated. The TFT instability depending on
optical and electrical stresses can be explained by the charge trapping
mechanism and the interface modiﬁcation.

82

Thursday
AMD7 - 2
14:20

December 6
The Effects of Wavelength and Negative Bias on
Light-Induced Hysteresis of In-Ga-Zn-O Thin-Film
Transistors
S.-H. Kuk, S.-Y. Lee, M.-K. Song, S. Kwon*, S. C. Youn*,
M.-K. Han
Seoul Nat. Univ., Korea*LG Display, Korea

We investigated the effects of wavelength and negative bias on lightinduced hysteresis of In-Ga-Zn-O thin-ﬁlm transistors. Transfer
characteristics were measured under various wavelengths and sweep
ranges. Hysteresis was observed under the 450 nm illumination, andwas increased with wavelength decrease. And hysteresis wasincreased, as applied negative bias increased.
AMD7 - 3
14:40

The Influence of New SiNX Gate Insulator in
a-InGaZnO Thin Film Transistors
H. Yamazaki, Y. Ishikawa, Y. Ueoka, M. Fujiwara*,
E. Takahashi*, Y. Andoh*, Y. Uraoka
Nara Inst. of S&T, Japan*Nissin Elec., Japan

We fabricated highly reliable amorphous In-Ga-Zn-O thin-ﬁlm
transistors (a-IGZO TFTs) with new silicon nitride (SiNx) as a gateinsulator. The SiNx layer was formed with utilizing SiF4/N2 as sourcegases at a temperature as low as 150oC. We studied the inﬂuence ofhydrogen and ﬂuorine on the electrical characteristics.
AMD7 - 4

Withdrawn

AMD7 - 5L
15:00

The 4 Masks A-IGZO TFT Structure with High
Uniformity and Electrical Stability
J. Y. Yan, W.-W. Tsai, C.-Y. Hung, H.-C. Yao, L.-H. Chen,
H.-C. Lin, Y.-C. Lin
ITRI, Taiwan----- Break -----

83

AMD

This article provides the four masks structure and process for channel
protection a-IGZO TFTs. The hybrid channel protection structure isdevelopment to replace the PECVD SiO2 and improve the stability andmanufacturing yield. TFT mobility is over 20 cm2/Vs, and standard
derivation of Vth is less than 0.03 V.

Thursday

December 6

15:50 - 17:15

Room A

AMD8/FLX7: Oxide TFT: Flexible Displays
Special Topics of Interest on Oxide TFT
Chair:
Co-Chair:

C.-H. Cheng, AU Optronics, Taiwan
M. Kimura, Nagaoka Univ. of Tech., Japan

AMD8/
FLX7 - 1:
15:50

Invited Flexible AMOLED Displays Driven by a-IGZO
TFTs and their Applications
H. Yamaguchi, T. Ueda, K. Miura, N. Saito, S. Nakano,
T. Sakano, K. Sugi, I. Amemiya
Toshiba, Japan

Reliability of a-IGZO TFTs on plastics against bias-temperature stresshas been improved. We developed an 11.7-in. AMOLED display drivenby a-IGZO TFTs on plastics. Using the panel, we demonstrated a
prototype of ﬂexible-display system integrated with a bend-input
function that enables users to interact with the display by ﬂexing it.
AMD8/
FLX7 - 2:
16:15

Invited A 9.9-in. qHD Top-Emission Flexible OLED
Display Driven by Oxide TFTs
K. Teramoto, E. Fukumoto, T. Fukuda, K. Shimokawa,
T. Saito, T. Tanikawa, M. Suzuki, G. Izumi, M. Noda,
S. Kumon, T. Arai, T. Kamei, M. Kodate, S. No,
T. Sasaoka, K. Nomoto
Sony, Japan

We have developed a direct fabrication method of oxide TFTs on a
ﬂexible substrate. We have also developed a ﬂexible color ﬁlter array forwhite OLEDs. The oxide TFT is integrated on a ﬂexible substrate. The
fabricated display had a wide color gamut with over 100% NTSC in uʼvʼspace.
AMD8/
FLX7 - 3
16:40

Flexible Top-Gate Amorphous InGaZnO TFTs on a
New Colorless Polyimide Substrate for Flexible
Display Applications
Y.-H. Yeh, C.-C. Cheng, M.-J. Yu, H.-C. Ku, B. C.-M. Lai,
B.-Y. Chou, E. Horii*, E. Kuribayashi*, T. Iwamoto*,
M. Yamazaki*, H. Inari*, K. Kurimoto*
ITRI, Taiwan*Kaneka, Japan

The ﬂexible top-gate a-IGZO TFTs array was fabricated on a Kanekaʼscolorless polyimide (PI) substrate at 200oC. Our proposed PI substrate
has high Tg (~350oC), high light transmittance (~87%), and low thermal
coefﬁcient (8 ppm/oC). Polymer resin (ILLUMIKA) was also applied topassivate the a-IGZO TFTs.

84

Thu./Fri.

December 6/7

AMD8/
FLX7 - 4L
17:00

High-Performance Solution Processed Indium Oxide
Thin Film s Transistors
C. Avis, Y. G. Kim, H. R. Hwang, J. Jang
Kyung Hee Univ., Korea

We have developed a high performance solution processed indium
oxide TFT (InOx TFT). The spin-coated TFTs has saturation mobility,
Vth, and gate swing of 57.3 cm2/Vs, 0.4 V, and 149 mV/dec., respectively.
Inverters based on InOx TFTs were fabricated and showed a gain~27
at VDD=3 V.
Author Interviews and Demonstrations
17:30 – 18:30

Friday, December 7
14:00 - 15:35

Room B-1

AMD9: Active-Matrix Circuits
Chair:
Co-Chair:S. Jeon, Samsung Advanced Inst. of Tech., Korea
M. Inoue, Chimei Innolux, Japan

AMD9 - 1
14:00

New Pixel Circuit Based on a-IGZO TFTs
Compensating OLED Degradation for 3D AMOLED
Displays
W.-Y. Chang, P.-Y. Kuo, C.-C. Hung, C.-L. Lin
Nat. Cheng Kung Univ., Taiwan

This work presents a new pixel circuit using amorphous indium gallium
zinc oxide TFTs that compensates for the degradation of TFTs and the
OLED for 3D active-matrix organic light-emitting diode displays.
According to the simulation results, the proposed driving scheme
successfully compensates for the luminance drop when the OLED
degrades.
Highly Reliable Gate Driver Circuit with Modulated
Gate Bias for Threshold Voltage Amelioration

AMD

AMD9 - 2
14:20

M. H. Cheng, C. D. Tu, C. L. Lin
Nat. Cheng Kung Univ., Taiwan
This work introduces an a-Si:H gate driver combining an AC-driving
method with modulated VGS of pull-down TFTs to further improve theVTH shift for long-term operation. The experimental results indicate theVTH shift of a TFT with the proposed scheme is reduced by 58.33%
compared to that of DC-bias stress.

85

Friday
AMD9 - 3
14:40

December 7
A Novel Design Methodology for On-Glass
Integrated Shift Register Circuits Using
Hydrogenated A morphous-Si Thin Film Transistors
H. Bang, J.-S. Kang, D.-S. Jung, S.-B. Kim, L.-Y. Kim,
H. Koo, K.-H. Lee
LG Display, Korea

A concept for design methodology for on-glass shift register circuits
which includes BTS effect is introduced. Based on the Vth of each
TFTs predicted by an empirical formula, the clamping voltages were
estimated through the SPICE circuit simulation and proven to match
well with the measured on-going reliability test values.
AMD9 - 4
15:00

High Resolution Active Photo-Sensing Circuit Using
Dual-Scan Compensation
L.-S. Chou, H. M. Chen, C.-T. Yang, Y.-H. Yang, Y.-H. Tai,
M.-H. Yeh*Nat. Chiao Tung Univ., Taiwan*ITRI, Taiwan

The simplest 2T1C sensing circuit has high aperture ratio in pixel, while
it suffers from a severe error owing to the voltage drop on scan bus. In
order to solve this issue, a dual-scanning active ampliﬁer sensing
circuit is proposed, which can correct the sensing error from 38.5% to
5.7%.
AMD9 - 5L
15:20

Multi-Bit Dynamic Self-Refreshing Memory-in-Pixel
Circuit for Ultra Low Power LTPS TFT-LCD
K. Yamashita, M. Yoshiga, S. Kawata, Y. Matsui,
Y. Haruyama, N. Sumi, H.-Y. Liang*, T.-Y. Cheng*
Chimei-Innolux, Japan*Chimei-Innolux, Taiwan

A 2-bit ultra low power dynamic Self-Refreshing-Pixel Memory in Pixel(SRP-MIP) circuit is successfully integrated into a 6.0-in. qHD (540x900)
reﬂective LTPS TFT-LCD. Measured power consumption in MIP modeis 2 mW and high reﬂectance of 21% is achieved. The prototype iscompatible with 60 Hz movie mode with excellent LC response time.
Author Interviews and Demonstrations
17:30 – 18:30
Supporting Organization:
Thin Film Materials & Devices Meeting86

TuesdayDecember 4Workshop on FPD Manufacturing,
Materials and Components
Tuesday, December 4
14:20 - 15:35

Room B-1

FMC

FMC1: Manufacturing Technologies (1)Special Topics of Interest on Oxide TFT
Chair:
Co-Chair:M. Furuta, Kochi Univ. of Tech., Japan
T. Tomono, Toppan Printing, Japan

FMC1 - 1:
14:20

Invited Preparation of Amorphous p-Type InGaZnO4
Films by Codoping of Al and N Atoms
K. Kobayashi, X. Zhang, Y. Kohno, Y. Tomita, Y. Maeda
Shizuoka Univ., Japan

Codoped InGaZnO4 ﬁlms were prepared by sputtering of targets of
InGaZnO4 and AlN in an Ar atmosphere. The hole-conductivity is
conﬁrmed in ﬁlms prepared from the target (7% AlN) at 2 10-2 Torr in
0.3-0.6% O2 atmosphere. The rectiﬁcation characteristic is obtained fora PN junction of InGaZnO4 ﬁlms.
FMC1 - 2:
14:40

Invited Solution-Based Atmospheric Pressure
Deposition Method for Oxide TFTs
M. Furuta, T. Kawaharamura, D. Wang
Kochi Univ. of Tech., Japan

We fabricated a thin-ﬁlm transistor (TFT) with an amorphous InGaZnO(a-IGZO) and aluminum oxide (AlOx) gate dielectric stack that was
deposited by a solution-based atmospheric pressure chemical vapor
deposition (APCVD). Field effect mobility of 4.1 cm2·V-1·s-1 and on/off
current ratio of over 108 was obtained.
FMC1 - 3:
15:00

Invited Zinc Oxide Film Growth Using High-Energy
H2O Generated by a Catalytic Reaction on Pt
Nanoparticles
K. Yasui, H. Miura, H. Nishiyama
Nagaoka Univ. of Tech., Japan

In this paper, a new CVD method of ZnO thin ﬁlms using the reaction
between zimethylzinc (DMZn) and high-energy H2O, the latter isgenerated by the Pt-catalyzed exothermic H2­O2 reaction, is presented.
Using this CVD method, ZnO thin ﬁlms with excellent electrical andoptical properties were grown.

87

TuesdayDecember 4

FMC1 - 4L
15:20

Large Area Sputtered Al2O3 Films for High Mobility
AM-TFT Backplanes on PVD Array System PiVot
55kVi2
A. Kloeppel, J. Liu, E. Scheer
Appl. Materials, Germany

In order to provide increased stability to AM-OLED backplanes using
IGZO we demonstrate the production worthiness of sputtered Al2O3
buffer ﬁlms on Gen 8.5 substrates using rotary targets on PVD arraysystem PiVot. The achieved Al2O3 layer properties and uniformity
underline the advantages of using rotary technology.
----- Break ----16:10 - 17:30

Room B-1

FMC2: Manufacturing Technologies (2)Chair:
Co-Chair:J. Hanna, Tokyo Inst. of. Tech., Japan
T. Miyashita, Tohoku Inst. of. Tech., Japan

FMC2 - 1:
16:10

Invited Solution-Crystallized High-Mobility Organic
Active Matrices and Display Panels
J. Takeya*,**, T. Uemura*, M. Uno***, Y. Kanaoka****Osaka Univ., Japan**Ctr. for High-End Molecular Semiconductors, Japan***TRI Osaka, Japan

High-mobility organic active matrices are developed with solutioncrystallized TFTs of various small molecular compounds. A patterning
process is found to fabricate the crystalline TFT arrays homogeneously,
so that active-matrix panels are constructed with the average mobility
more than 3 cm2/Vs. Operation of LCDs is successfully demonstratedusing the printable backplanes.
FMC2 - 2:
16:30

Invited High Thermal Stability and High Performancein OFETs Fabricated with Smectic LC Materials
J. Hanna, H. Iino
Tokyo Inst. of Tech., JapanThe liquid crystallinity, which often appears in soluble organic ﬁeld
effect transistor (OFET) materials, has been hardly recognized to beavailable for fabrication of OFETs. We discuss and demonstrate its
availability in fabricating molecularly ﬂat and uniform ﬁlms in large-area,
improving thermal stability of the ﬁlms, and high FET performance.

88Tue./Wed.

December 4/5

FMC2 - 3:
16:50

Invited Development of Novel Piezo Inkjet Print Head
Utilizing MEMS Technology for Printed Electronics
Applications
Y. Nishi, S. Sakai, K. Higashino*, Y. Machida, K. Yoshida
Konica Minolta IJ Techs., Japan*Konica Minolta Tech. Ctr., Japan

FMC2 - 4
17:10

Optimization of the Surface Treatment on Cover
Glass for Automotive TFT-LCDs
T. Kiyohara, Y. Morii, M. Kawano, K. Itoga, A. Yuki,
T. Satake
Mitsubishi Elec., Japan

We have established the surface treatment optimizing method of thecover glass for automotive TFT-LCDs by using angular scattering lightcharacteristics. We can obtain excellent image quality under thevarious sun light conditions with the cover glass which surface
treatment optimized by this method.
Author Interviews and Demonstrations
17:50 – 18:50

Wednesday, December 5
9:20 - 12:20

Event Hall

Poster FMCp: FPD Manufacturing, Materials & Components
FMCp - 1

Wet Etching and Striper Characterization for H2O2
and Non-H2O2 Etchant and Amine and Non-Amine
Stripper of Cu-Based TFT Application
H. Kou, C. Zhang, Y. Chen, X. Zhong, G. Li
Shenzhen China Star Optoelect. Tech., China

For Cu-base TFT application, the key effect factors about different H2O2
contents and shelf-life were investigated. It is found etching
performances are inﬂuenced on changeable and nonlinear etching rateof main and sub oxidizer. And the novel striper of ester-base exhibits
better performances than conventional amine-base striper.

89

FMC

We are trying to develop a new inkjet printing head with the use of
MEMS technology for the Printed Electronics applications. We
investigated an ink channel design and highly-accurate silicone nozzle
plate, and ﬁnally achieved to eject small droplets accurately through allof the nozzles without creating a satellite.

Wednesday
FMCp - 2

December 5
Research on Thinning Technology with Wing Pattern
D. Shi, G. Jian, C. Xu, X. Jiang, L. Qu, D. Yang, T. Wu,
T. MinBOE Optoelect. Tech., China

To realize higher resolution, narrow frame, lower power consumption,subject to the condition of equipment, it is difﬁcult to get narrowspacing. In this paper, we change normal line to wing line in mask, andrealize further narrow space in the existing condition.
FMCp - 3Fabrication of Multi Nozzle Dispenser for RGB
Phosphor Light Source
G. Lim, H. J. Jeon, J. S. Gwag, G. Park*, J. H. Kwon
Yeungnam Univ., Korea*Sunlin Univ., Korea

The RGB linear light source array that consisted of the RGB phosphors
was fabricated by using the multinozzle dispenser. The multinozzle wasmade on the silicon wafer by etching the multinozzle photoresist
pattern in the DRIE equipment. The width and spacing between thenozzles were 100 µm and 541.5 µm.
FMCp - 4

Low Power Consumption TFT-LCD Using Si-C Resin
as Passivation Layer
C. Yan, Z. Xie, J. Guo, X. Chen, T. Min, X. Chen,
Q. Shen, W. Zhang, T. Li, S. Xu, K. Lu, X. Hou, X. Jiang,
T. Wu, S. Su, J. Wang
BOE Optoelect. Tech., China

By using Si-C resin, we succeeded in prototyping a high deﬁnition LCD
panel, retina display as 300 pixels per inch, which improves the RC
delay of signal effectively and decreases nearly 40% in the logic power
consumption compared to the exiting panel with SiNx passivation layer.
FMCp - 5

Study on Photo Process for Low-k Non-Photoactive
Acrylic R esin TFT-LCD
X. Hou, J. Guo, X. Chen, T. Wu, Q. Shen, K. Lu, T. Min
BOE Optoelect. Tech., China

In this paper, we studied on the effects of photo process parameters to
PR proﬁle, which can improve the low-k non-photoactive acrylic resin
etching proﬁle. By optimizing PR proﬁle, the resin etching structure
proﬁle is good for overlap of next layers had obtained.

90

Wednesday
FMCp - 6

December 5
Cellulose Ether Polymers as Optical Compensation
Films for LCDs - High Birefringence and Tunable
OpticsZ. Wang, J. Folkenroth*, W. Zhou**, Y. Zhang, S. Xiuqin
Dow Chem., China*Dow Wolff Cellulosics, USA**Dow Materials Sci., USA

FMCp - 7

TFT Characteristics Improvement by Using Single
Slit Mask
L. Qu, J. Guo, X. Chen, Z. Xie, W. Zhang, M. Taeyup,
T. Wu
BOE Optoelect. Tech., China

As an effective TFT channel design technique, single slit mask can
improve the TFT characteristics greatly. This article makes thetheoretical and experimental analysis on the characteristics of TFT byusing single slit mask. Compared to the mass production, Ion has
improved by 29%.
FMCp - 8

An Inspection System for Transparent Circuits with
the Use of a PDLC/ITO Film
C.-H. Chan*,**, Y.-T. Zou**, C.-T. Chen**, T.-K. Liu**,
C.-H. Chen**, H.-W. Wang**, S.-C. Lin*
*Nat. Tsing Hua Univ., Taiwan**ITRI, Taiwan

An inspection system for transparent circuits to locate faulty shut/open
circuits has been developed. With power on, the liquid crystals line up,
re-orientate themselves and the ﬁlm covering the conducting area turns
clear while the liquid crystals covering the non-conducting area are
randomly scattered and diffuse light in all directions.
FMCp - 9

An Analytical Model for Describing LED Pad
Temperature in Backlight Unit
K.-Y. Chang, C.-C. Hu, C. Xiong, W.-Y. Wei
Shenzhen China Star Optoelect. Tech., China

An Equivalent Thermal Resistance, ETR, is introduced in this paper topredict LED (light emitting diode) pad temperature while same thermal
management is applying. A simpliﬁed experiment is conducted to ﬁnd
the behavior of ETR as different heat sink size is applied. Analyticalsolution, a power function, shows great match with the experiment
data.

91

FMC

ETHOCEL ethylcellulose from Dow Chemical provides an alternative
material to tri-acetyl-cellulose for LCD retardation ﬁlms to increase
viewing angle through its unique birefringence optics and excellent
optical transparency. Recently, a new ETHOCEL-based polymer
system has been developed with new optical properties such as
tunable birefringence and ﬂat wavelength dispersion.

Wednesday
FMCp - 10

December 5
The Study on Relation between Color Gamut andLuminous Efficiency Based on the Shift of Color
Filter and LED Spectrum
W. Zheng, C.-T. Kang
Shenzhen China Star Optoelect. Tech., China

The relation between color gamut and luminous efﬁciency basic on theshift of color ﬁlter and LED spectrum is proposed. The study isundergone by simulation and the simulation result shows that the twoparameters we study in the paper usually change oppositely on thewhole.
FMCp - 11

Development of a Simulation Model to Analyze theChromaticity Variation at the Place Lit by RYGBWhite-LED
K. Misono
Miyakonojo Nat. College of Tech., Japan

Although the RYGB-White-LED can provide a ﬂexible control ofphotometric and colorimetric characteristics, the practical issue is tosuppress the color variation on the lit-plane. By taking into account the
spectral irradiance, we developed a ray tracing model that can evaluate
the color uniformity on the lit-plane.
FMCp - 12

Transmittance of LED Encapsulant Containing
Quantum Dot with Various Types of Ligands
C. S. Lee*,**, C. J. Han**, S.-K. Hong**Dongguk Univ., Korea**KETI, Korea

In this study, transmittance and degree of cure of encapsulant wasmeasured according to the number of puriﬁcation of quantum dot,
when quantum dot was used as LED phosphor. The changes in the
degree of cure was checked along with the types of ligand in quantum
dot.
FMCp - 13

Conversion Efficiency of RGB Phosphor Array on
the Lightguide
H. J. Jeon, K. S. Lim, J. H. Kwon
Yeungnam Univ., Korea

The light power conversion efﬁciency of the RGB phosphors wasmeasured in terms of the phosphor concentration. The excitation
wavelength was 450 nm. The power conversion efﬁciency was almost
doubled when the reﬂecting layer was placed behind the phosphor
layer and was proportional to the phosphor concentration.

92

Wednesday
FMCp - 14

December 5
Solution for Eliminating Support Pin Shadow Murain Direct LED Backlight
K.-Y. Chang, C.-C. Hu, Z. Su
Shenzhen China Star Optoelect. Tech., China

FMCp - 15

A Modified Color System for LED Chromaticity
Ranking in a System
C. Feng, K.-Y. Chang, C.-C. Hu, C. Ning
Shenzhen China Star Optoelect. Tech., China

A modiﬁed color system is proposed for light emitting diode (LED)chromaticity ranking. By directly giving the output chromaticity, it solves
the problem of LED metamerism that results in output chromaticdifference of lighting systems. It may also simplify the LED chromaticity
control and increase the LED usage rate.
FMCp - 16

Properties of Cu Doped NiO Transparent Oxide Thin
Films by Sol-Gel Solution
C. Takahashi, M. Kawamura, Y. Abe, K. H. Kim
Kitami Inst. of Tech., Japan

Wide band-gap oxide semiconductor nickel oxide thin ﬁlms wereprepared by sol-gel spin-coating under various annealing temperaturesfrom 250 to 450 C and Cu doping amounts from 0 to 20 at.%. The
optical and structural properties of these ﬁlms signiﬁcantly depend on
the temperature and the Cu doping amount.
FMCp - 17

Low Temperature Fabrication and UV Treatment of
Spin Coated ZnO Films Using Partial Hydrolyzate ofDiethylzinc Based Solutions
K. Haga, K. Inaba, K. Toyota, Y. Takemoto, K. Tokudome,
M. Oshima*, K. Yoshino*
Tosoh Finechem, Japan*Univ. of Miyazaki, Japan

Low temperature fabrication of ZnO ﬁlms using partial hydrolyzate ofdiethylzinc based solution were investigated. UV treatment was
effective to improve the electronic performance of ZnO ﬁlms. Group 13
element metals (Ga and In) compounds were mixed to our precursor
solution and transparent multi-metal oxide ﬁlms were obtained.

93

FMC

A simple method for eliminating support pin shadow mura in direct LED
backlight for LCD-TV was proposed. Mechanism of support pin shadow
mura was discussed. Simulation and experiment results conﬁrmed that,by lower the height of support pin, shadow mura would effectively dropoff. However, the supporting function remains.

Wednesday

December 5

FMCp - 18L Strain Gage Studies to Understand the Impact ofRing Radius in Ring on Ring Test
A. N. Subramanian, P. R. Samala, S. H. Carley
Corning, USA
This paper investigates the impact of ring radius in the Ring on Ring
(ROR) test speciﬁc to stress development in thin glasses by strain gagestudies. 0.6 mm thick ion exchanged Corning Gorilla Glass was used
for this study. Two ring geometries with different minor radius wereconsidered.
FMCp - 19L Effect of Birefringence to Fiber Polarizers Utilizing a
New R ay Tracing S imulation Tool
R. Iwasaki, H. Imamura, Y. Yokote, H. Kim*
Samsung Yokohama Res. Inst., Japan*Samsung Elect., Korea
We have developed a new ray tracing simulation tool which directly
took birefringent effect into the models to investigate the effect of ﬁber
polarizers. Simulated result showed the same tendency as that of thearticle in the past.
FMCp - 20L Improvement of Surface Strength for Cover Glasses
H. Ohkawa, H. Saiki, A. Nakagawa, M. Fukawa,N. Ishimaru
Asahi Glass, Japan
Recently, thinner cover glass is required therefore the glass strength ismore important. It was found that surface polishing after chemical
strengthening improved surface strength. In chemical strengthening
process hydrogen enters the glass surface and creates chemical
defects. Surface strength is improved by removing them.
FMCp - 21L Comparison of Micro Poly-Si Grains Formed byBlue Multi Laser Diode Annealing (BLDA) andPlasma Enhanced Chemical Vapor Deposition(PE-CVD)
K. Shirai, S. Chinen, T. Okada, T. Noguchi, D. Daineka*,
Y. Bonnassieux*
Univ. of the Ryukyus, Japan*Ecole Polytechnique, France
Characteristics of micro poly-Si grains formed by BLDA and PE-CVD
were compared. Randomly oriented small grains were obtained by PECVD. Uniform micro poly-Si grains with preferred crystal orientation of(111) face were obtained by controlling the irradiation condition of
BLDA.

94

Wednesday

December 5

FMCp - 22L Novel Diffusion Sheet Using Nano Fibers
T. Kim, S. Kim, M. S. Lee*, D. Y. Lim**, S.-W. Choi
Kyung Hee Univ., Korea*Chonnam Nat. Univ., Korea**Korea Inst. of Ind. Tech., Korea

FMCp - 23L ESR Evaluation of Damages Induced in InGaZnO4
with Plasma
T. Matsuda, D. Nishimoto, K. Takahashi, T. Ueno,
M. Kimura
Ryukoku Univ., Japan
Damage induced in IGZO by plasma was evaluated by ES. The ESR
signal was newly found at g-factor of 1.939, and width with 0.97 mT,
respectively. Another ESR signal was weakly observed at g-factor at
2.0030. These ESR signal would be related to the oxygen vacancy in
IGZO material.
FMCp - 24L Uniform IGZO Layers by Large Area Sputter
Deposition from Rotary Targets
E. Scheer, D. K. Yim*, Y. Ye*
Appl. Materials, Germany*Appl. Materials, USA
To enable metal oxide technology for AM-OLED backplanes uniform
IGZO layers are needed on large area substrates. The control ofoxygen ion bombardment exposure during layer growth is essential forreactive sputter processes. Using rotary targets for IGZO deposition
achieves both uniform electronic properties as well as suitable TFT
distribution.
----- Lunch -----

RECEPTION
Wednesday, December 5, 2012
19:00 – 21:00
Sakura (1F)
Kyoto International Conference Center
See page 12 for details

95

FMC

We fabricate a novel diffusion sheet using nano ﬁbers. The diffusion
sheet is consisted of a blended isotropic polymer matrix and nanoﬁbers with distinct ordinary (no) and extraordinary refractive index (ne).
The diffusion sheet designed and fabricated here exhibits uniform
distribution of brightness.

Wednesday

December 5

14:00 - 15:00

Room B-2

FMC3: Materials (1)Chair:
Co-Chair:K. Suganuma, Osaka Univ., JapanT. Hotta, DNP, Japan

FMC3 - 1:
14:00

Invited Fabrication of Transparent Conductive Films
with Ag Nanowires on Plastic Films
K. Suganuma, T. Tokuno, T. Araki, J. Jiu, T. Sugahara,
M. Nogi, H. Uchida*, K. Shinozuka*
Osaka Univ., Japan*Showa Denko, Japan

Transparent conductive ﬁlms with Ag nanowires were successfully
fabricated at low temperature on plastic ﬁlms. Random networks of Ag
nanowires exhibit high electrical conductivity, optical transparency, andﬂexibility. Mechanical pressing or light sintering was found to beeffective to achieve the excellent performance of the transparent
conductive ﬁlms.
FMC3 - 2:
14:20

Invited Optically Transparent Nanofiber Papers for
Printed Electronics
M. Nogi, H. Koga, M. Karawaka, K. Suganuma
Osaka Univ., Japan

Recently, we have invited an optically transparent paper using cellulose
nanoﬁbers of 15 nm wide. The nanoﬁber paper has higher thermal
stability than plastics and optical transparency of glass, maintaining
high foldability of conventional paper. In this presentation, we introduce
their characteristics and applications in the electronic devices.
FMC3 - 3
14:40

Development of Dielectric Materials and Cu Inks fora Fine Pitch Wiring in Printing Process
M. Ito, K. Tsuruoka, M. Fukuda, Y. Kuwana, Y. Nagai,
S. Kashiwabara
Asahi Glass, JapanWe developed a surface energy controllable dielectrics and a lowtemperature curable Cu ink. A ﬁne pitch wiring which is important
technology for printing process was achieved by forming electrodepatterns using Cu ink inkjet printing onto the high surface energy areaof dielectrics.
----- Break -----

96

Wednesday

December 5

15:50 - 17:10

Room B-2

FMC4: Materials (2)Chair:
Co-Chair:R. Yamaguchi, Akita Univ., Japan
S. Kurihara, Kumamoto Univ., Japan

FMC4 - 1:
15:50

Invited History and Future of FPD’ s andSemiconductors

FMC

Y. Todokoro*,**, S. Imai*, T. Matsumoto *, T. Unate****Osaka Univ., Japan**Nara Inst. of S&T, Japan***UNATE, Japan

History of semiconductors has been reviewed in miniaturization,
increasing wafer size, introduction of new materials, and integration of
new functions. History of FPD's has been reviewed in frontplane andbackplane. Feedbacks from the history of semiconductors to FPD's
have been discussed.
FMC4 - 2:
16:10

Invited Color Switching of One Dimensional
Photonic Crystals Consisting of AzobenzeneFunctionalized Polymer LCs and Polyvinylalcohol
S. Kurihara*,**, Y. Kuwahara*, T. Ogata*, M. Moritsugu****Kumamoto Univ., Japan**Kumamoto Inst. for Photo-Electro Organics, Japan***Kinki Univ., Japan

Photo-responsive multi-bilayered ﬁlms consisting of azobenzene
polymer liquid crystals (PAzo) and polyvinylalcohol (PVA) wereprepared on a glass substrate by spin coating of the polymer solutions
alternately. The reﬂectivity of the multi-bilayered ﬁlms disappeared andappeared again by annealing at 80 C and UV irradiation, respectively.
FMC4 - 3:
16:30

Invited A Novel Mechanism to Give Photosensitivity
to Engineering Plastics: Reaction Development
Patterning
T. Oyama
Yokohama Nat. Univ., Japan

Reaction development patterning (RDP) is a novel method to give
photosensitivity to engineering plastics including commerciallyavailable polyimides, polycarbonates and polyesters. RDP-based
pattern formation is realized by changing solubility of a polymer byreaction with nucleophiles in a developer during development process.

97

Wed./Thu.

December 5/6

FMC4 - 4
16:50

A Frame Work of New Design for Bending Test to the
Non-Planar Glass
C.-Y. Chiu, K.-C. Chang, Y.-C. Liu
G-tech Optoelect., Taiwan

Balls-on-Balls (BOB) bending test is a new design for non-planar glass
ﬂexure strength measuring. The correlations among loading force,
bending span, thickness, and width of glass ﬁt in with the calculation of
ﬂexure stress (σ ∝ PL/wt 2). It is practicable to measure the ﬂexurestress for non-planar glass.
Author Interviews and Demonstrations
17:30 – 18:30

Thursday, December 6
10:50 - 12:05

Room E

FLX5/FMC5: Flexible Materials and Fabrication Processes
Chair:
Co-Chair:Y. Mishima, FUJIFILM, Japan
A. Fujita, JNC, Japan

FLX5/
FMC5 - 1
10:50

Roll-to-Roll Deposition of ITO Film on a Flexible
Glass Substrate
Y. Ikari, H. Tamagaki
Kobe Steel, JapanThe roll-to-roll deposition of ITO ﬁlm on a ﬂexible glass roll, 50 µm thick,
300 mm wide and 10 m long, was made successfully by magnetron
sputtering at elevated substrate temperature. The ITO ﬁlm shows asheet resistance of 7.5 ΩSq at 190 nm, and the resistivity is calculated
as 143 µΩcm.
FLX5/
FMC5 - 2
11:10

Ultra Thin Glass for Flexible Display
C. C. Kuo, Y. C. Chen, B. S. Chiou, J. Y. Chiou, Y. T. Lee,Y. Y. Huang
Chunghwa Picture Tubes, Taiwan

Nowadays, glass is attractive as a substrate in ﬂexible electronic anddisplay. We have developed complete SH-to-SH type TFT backplane
process ﬂow. Moreover we have succeeded demonstrate a ﬂexible
EPD using 0.1 mm glass as TFT backplane substrate. In this paper, we
will describe fabrication procedures and realize in a 6-in. EPD module.

98Thursday

December 6
Flexible LCD Fabricated with a Slit Coater

FLX5/
FMC5 - 3
11:30

M. Kimura, K. Ohtsuka, Y. Nagataki, T. N. Oo, M. Mori*,
H. Hirata*, T. Akahane
Nagaoka Univ. of Tech., Japan*Toray Eng., Japan

Development of a Single Substrate Flexible LCD
Using Microencapsulation Technology

FLX5/
FMC5 - 4L
11:50

S.-H. Han, Y.-S. Kang, H.-G. Kim, S. S. G. Kang,
H.-H. Hwang
Image Lab, Korea

A Single substrate ﬂexible LCD is developed using Ch-LC
microencapsulation and printing method. Unlike conventional PIPS
method, combining LC microencapsulation with printing process
enabled us to dispense with an upper substrate, resulting in a much
simpliﬁed manufacturing of ﬂexible LCDs. Good electro-optic
performances and low reset voltage are achieved.
----- Lunch ----14:00 - 15:00

Room B-2

FMC6: Materials (3)Chair:
Co-Chair:K. Matsukawa, Osaka Municipal Tech. Res. Inst., Japan
T. Unate, UNATE, Japan

FMC6 - 1:
14:00

Invited High Refractive Index Thin Film Preparedfrom Organic-Inorganic Hybrid Materials
K. Matsukawa, Y. Minami*, S. Watase
Osaka Municipal Tech. Res. Inst., Japan*Solar, JapanThe organic-inorganic hybrid thin ﬁlms are optically transparent, sothey are useful optical materials and good candidates of refractive
index controllable materials. We have been investigating several typesof organic-inorganic hybrid materials with high refractive index bycontaining sulfur elements, zirconia nano-particles.

99

FMC

Homogeneously aligned liquid crystal layer on substrate ﬁlm on which
there is no necessity of forming alignment ﬁlm can be assembled by aslit coater. TN and IPS type ﬂexible LCDs were demonstrated. It is
expected that production time can be shortened several ten minutes
because of unnecessity of alignment ﬁlm.

Thursday

December 6

FMC6 - 2
14:20

High Reliability of Oxide TFT Using SolutionProcessed Photosensitive Passivation Layer
A. Tanabe, T. Kojiri, M. Hanmura
ZEON, Japan

A solution-processed photosensitive passivation layer (PPL) has beendeveloped for an a-IGZO TFT. By optimizing the component, we haveachieved high reliability performance of an a-IGZO TFT. Because the
PPL is coated by a solution process, the CVD process can be skipped.
The PPL will reduce manufacturing cost of LCD panels and OLED.
FMC6 - 3
14:40

Spatial Distribution of Properties of a-IGZO Films
Deposited by Rotation Magnet Sputtering
Incorporating Dual Target Structure
T. Goto, S. Sugawa, T. Ohmi
Tohoku Univ., JapanA new magnetron sputtering equipment called rotation magnet
sputtering incorporating dual planar target structure was developed toobtain high target utilization and wide high-quality-ﬁlm-deposition
region by moving multiple plasma loops. This new system was applied
to a-IGZO ﬁlm depositions. Spatial distributions of ﬁlm properties were
investigated.
----- Break ----15:50 - 16:50

Room B-2

FMC7: Backlight
Chair:
Co-Chair:S. Banerjee, Sumitomo Chem., JapanK. Käläntär, Global Optical Solutions, Japan

FMC7 - 1
15:50

Slim Block Backlight System with Local Dimming
S. Yamamoto, J. Yokoyama, M. Nagayoshi, S. Ouchi
Hitachi, Japan

We have developed the new Slim Block Backlight which realizes low
proﬁle with the lowest power consumption, and high contrast ratio. A
new side-view LED, diffusion structures and a shielding pattern are
newly developed for this new backlight system.
FMC7 - 2
16:10

The Design of Novel Wedge Structure with High
Efficiency LGP
Y.-W. Chang, S. Liao, H.-P. Kuo
AU Optronics, Taiwan

We propose a novel wedge structure to improve the efﬁciency of
wedge type LGP. With our design, we could improve wedge type LGP
efﬁciency 13% up and decrease light naturally lost in shorter mixing
distance. As the LGP thickness decrease, the beneﬁt is more distinct.

100

Thu./Fri.

December 6/7

FMC7 - 3
16:30

Multilayer Wavelength-Selective Reflector Films for
LCD Applications
S. Banerjee
Sumitomo Chem., Japan

Author Interviews and Demonstrations
17:30 – 18:30

Friday, December 7
9:00 - 10:20

Room B-2

FMC8: Manufacturing Technologies (3)Chair:
Co-Chair:Y. Iimura, Tokyo Univ. of A&T, Japan
T. Nonaka, AZ Elec. Materials, Japan

FMC8 - 1
9:00

Barrier Properties of Ultra High Barrier Coating
Prepared by Roll to Roll PECVD Process andAnalysis of Gas Leakage Mechanism
H. Tamagaki, T. Okimoto
Kobe Steel, Japan

SiOx transparent ultra high barrier coating up to 1000 nm was preparedby roll-to-roll PECVD system on Planelized PEN substrate, and its
barrier(WVTR) was measured as 1.7x10-5 g/m2/day by calcium test. A
cross-sectional TEM observation of the point of water leakage revealed
a localized crack in the SiOx coating.
FMC8 - 2
9:20

Low Temperature C rystallization Technology ofExtremely Thin TCO for Next Generation Panels
T. Yukawa, M. Takei, Y. Oono, A. Ota, M. Arai, J. Kiyota,
S. Ishibashi, K. Saito
ULVAC, Japan

Recently, realization of high-performance transparent conductive oxide(TCO) ﬁlm is required, due to the trend of high-performance small andmiddle size panel (mainly represented by smart phone and tablet PC).
We hereby report the crystallization technology of extremely thin TCO
that realized high transmittance and low resistance through lowtemperature deposition.

101

FMC

We designed multilayer wavelength-selective reﬂector ﬁlms by stacking
thin-ﬁlms of transparent polymer. The optimum structure of themultilayer is determined using a combination of characteristic matrix
method and a version of genetic algorithm. Such multilayer ﬁlms can beused in LCD devices to enhance the color saturation of the display.

Friday

December 7

FMC8 - 3
9:40

Optical Properties of Nanostructured ZnO Films
Influenced by Different Gas Ratio Deposition with
Radio Frequency Magnetron Sputtering
C. Li, X. Li, D. Wang, T. Kawaharamura, M. Furuta,
A. Hatta
Kochi Univ. of Tech., JapanZnO nanostructures fabricated on the as-deposited ZnO ﬁlms whichwere prepared with different gas ratio during a magnetron radio
frequency sputtering. It was found that Zn rich thin ﬁlm contributed toform much density ZnO nanostructures as well as exhibited higher
intensity blue-green emission.
FMC8 - 4
10:00

Rotary Sintered Ceramic ITO Sputtering Targets for
the Flat Panel Display Industry
T. Miyata, P. Lippens*, D. Chiu**
Umicore Japan, Japan*Umicore Thin Film Prods., Liechtenstein**Umicore Thin Film Prods., Taiwan

The sintered ceramic ITO sputtering targets achieve much higher target
utilization up to 90% and give rise to much lower coating costs. At thesame time, they realize quasi nodule free sputtering even at high powerloads. That results in higher process stability and a better product yield.
----- Break ----10:50 - 11:50

Room B-2

FMC9: LED Lighting Technologies
Special Topics of Interest on Lighting Technologies
Chair:
Co-Chair:

K. Käläntär, Global Optical Solutions, Japan
K. Li, Wavien, USA

FMC9 - 1
10:50

10,000 Nits Projection-Type Recycling LED BackLight System for Outdoor LCDs
K. Li
Wavien, USA

This paper describes a high brightness back-light system for LCD
displays using Wavien's Recycling LED Technology (RLT). A 2 X 2Micro Cube system comprising four 19-in. display video cubes has been
demonstration with over 10,000 nits output brightness. A single 80-in.
diagonal LCD display is being constructed.

102

Friday
FMC9 - 2
11:10

December 7
A Novel Design of LED Embedded Alexis Wound
Retractor
Y. -C. Su*, Y.-S. Chen**, J.-W. Pan*,**, C.-Y. Wu**
*Chi Mei Medical Ctr., Taiwan**Nat. Chiao Tung Univ., Taiwan

FMC9 - 3
11:30“Square-Light” Technology as Novel Approach for
Making Ultra-Slim LED Lighting Devices
J. Hou, Z.-W. Koh, W.-C. Ing
LuxingTek, Taiwan

The world thinnest “direct-lit” LED backlight module having a minimal
number of LED light source will be presented. This revolutionary
approach reveals the possibility of converting a strong LED “dot” lightinto a uniform surface light at 7 mm thickness with 50 mm LED pitch.
Author Interviews and Demonstrations
17:30 – 18:30
Supporting Organizations:Japan Electronics Packaging and Circuits Association
Japan Society of Colour Material
RadTech JapanThe Japanese Research Association for Organic Electronics Materials
The Japanese Society of Printing Science and Technology
The Society of Photography and Imaging of JapanThe Technical Association of Photopolymers, JapanIDW Best Paper AwardIDW Outstanding
Poster Paper Award
These awards will go to the most outstanding papers
selected from those presented at IDW/AD ’12.
The 2012 award winners will be announced on the
IDW website: http://www.idw.ne.jp/award.html
103

FMC

The key design of this invention is the LED mounted on the inner ringof Alexis Wound Retractor. With this design, we could offer a muchwide spreaded lightening comparing to the traditional shadowlesslighting.

Wednesday

December 5

Workshop on Plasma Displays
Wednesday, December 5
14:00 - 17:00

Event Hall

Poster PDPp: PDP
PDPp - 1

Study on Seamless and Large-Cell PDPs
T. J. Kweon, J. N. Kim, H. H. Kim, D. H. Choe
Samsung SDI, Korea

In this paper, we have studied a promising device for seamless andlarge cell ﬂat panel display using PDP discharge. Finally, we developed
not only seamless but also large cell plasma display panel using bus
electrode on ﬁlm material and chemical etching method of thin glass.
PDPp - 2

Characteristics of High Efficient Two Level Sustain
Waveforms in AC PDPs
J.-Y. Jeong, J.-S. Park, J.-W. Kang
Dankook Univ., Korea

In order to improve the luminance of ac-PDP, four different types ofsustain pulses were proposed and examined. IR emission, luminanceand current were measured and then compared with those propertiesof conventional pulse. The proposed waveform showed 25% higher
luminance and 47.3% higher efﬁciency than the conventional.
PDPp - 3

Characteristics of a Gas Type X-Ray Detector Basedon Plasma Display Technology
H.-H. Park, S.-H. Eom, J.-W. Kang, H.-J. Lee*, K.-S. Lee*
Dankook Univ., Korea*Korea Univ., Korea

A gas type detector based on plasma display technology wasinvestigated as a candidate for the ﬂat-panel radiation detector. The
sensitivity of Xe 100% detector was 0.20 nC/mR • cm2 at the electricﬁeld of 0.36 V/µm and it is about a tenth lower compared to that of a-Se
detector at 10 V/µm.
PDPp - 4L

Crystal Growth of MgO Thin Films with Co
Nanoparticles Deposited Using Arc Plasma Gun
H. Kosuga, H. Yoshioka*, S. Yamamoto
Ryukoku Univ., Japan*Hyogo Pref. Inst. of Tech., JapanThe MgO thin ﬁlm on Co nanoparticles deposited using the APG with
500 pulses of arc discharge exhibited improved crystallinity and aphotoelectron emission that was at least threefold higher than that of
the MgO thin ﬁlm without Co nanoparticles.

104Wed./Thu.

December 5/6

PDPp - 5L

New 3D Experimental AC-PDP Cell with Grooved
Structure
T. Sakai, K. Tachibana*Display Res. Labs., Japan*Osaka Electro-Commun. Univ., Japan

High efﬁciency PDP is still required commercially. Its solutions dependon the effective uses of positive column and metastable Xe atoms in
the region. We made a new 3D experimental panel toward these aims.

Thursday, December 6
10:50 - 11:50

Room C-2

PDP

PDP1: Driving
Chair:
Co-Chair:Q. Yan, COC Display Device, China
R. Murai, Panasonic, Japan

PDP1 - 1
10:50

High Speed, Low Voltage Write Addressing of PDPs
by Use of Extremely Weak Discharge for Priming
M. Yoshita, T. Shiga
Univ. of Electro-Commun., Japan

Extremely weak discharge ignited just before the scan pulse provides
priming effect to the addressing. The address discharge delay is
reduced to less than half and the data voltage is reduced to 17 V when
the scan voltage margin is 10 V. There is no increase in the backgroundluminance.
PDP1 - 2
11:10

Adaptive Subfield Data Optimization for Low
Address Power in PDPs
F. Han, X. Zhang, Z. Tu, W. Wang, Z. Liang
Xi’ an Jiaotong Univ., China

Based on visual perception characteristics to image at different
brightness level, adaptive subﬁeld data optimization method for lower
address power is proposed. The experimental results with IEC standard
video displayed on 50-in. PDP show that the maximum and average
address power are reduced by 25.8 W and 8.16%, respectively.
PDP1 - 3
11:30

Effect of Transparent Electrode with HighResistance on PDP Luminance and Efficacy
S. NaganoSamsung SDI, Korea

The transparent electrode with ultra-high resistance could help highluminance and high luminous efﬁcacy without boosting up the
discharge voltage. Presumably the mechanism is that it restricts thepeak current to accordingly promote moderate and long persistentdischarge. The sheet resistance should be investigated around 10 k 1 MΩ.
----- Lunch ----105

Thursday

December 6

14:00 - 15:15

Room C-2

PDP2: Ultra HDTV
Chair:
Co-Chair:Y.-S. Kim, Hongik Univ., Korea
H. Kajiyama, Tokushima Bunri Univ., Japan

PDP2 - 1:
14:00

Invited Development of 145-in. Diagonal SUPERHi-VISION PDPs
R. Murai, H. Abe, T. Oue, K. Ishii*, Y. Murakami*,
N. Shimidzu*
Panasonic, Japan*NHK, Japan

We have developed prototype full-resolution SUPER Hi-VISION (SHV)
plasma display panel (PDPs) which has 4,320 scanning lines and over
33 million pixels with 0.417-mm pixel pitch by driving method. This SHV
PDP was exhibited to the public at the International Broadcasting
Center in the London during the 2012 Olympic Games.
PDP2 - 2:
14:20

Invited Image Quality of 145-in. Diagonal SUPERHi-VISION PDPs
T. Usui, K. Ishii, N. Saito, T. Yamashita*, N. Nakamura*,
K. Nishimura*NHK, Japan*Panasonic, Japan

We have developed a prototype full-resolution SUPER Hi-VISION(SHV) Plasma Display Panel (PDP) with 4,320 scanning lines and over
33 million pixels. Highly realistic SHV programs were reproduced
successfully on a 145-in. diagonal PDP with a 0.417 mm pixel pitch
using a new panel driving method.
PDP2 - 3
14:40

Driving Characteristics of Ultrahigh Resolution
PDPs with Twin-Path Coplanar Discharge Cells
K. Ishii, Y. Hirano, T. Usui, T. Shiga*, Y. Murakami
NHK, Japan*Univ. of Electro-Commun., Japan

Write- and erase-address panel driving characteristics were
investigated for a twin-path-type ultrahigh-resolution plasma display
panel. The common scanning electrode structure increases theminimum addressing voltage. When the common electrode area isdecreased, the decrease in the write-addressing voltage margin isnotable compared with that of erase-addressing.

106

Thursday

December 6

PDP2 - 4L
15:00

Reduction of Address Period in 120-Hz Frame Rate
PDP by Mixing Single-Line and Multi-Line Scanning
C. Suzuki, T. Shiga
Univ. of Electro-Commun., Japan

Pixels are alternately scanned by single-line and multi-line scanningtechnique every frame. Errors caused by multi-line scanning arecompensated with the help of summation property of human eye. The
method shortens 25% address period when two lines are scanned
simultaneously. PSNR of the images with the proposed method
exceeds 40 dB.
----- Break ----Room C-2

PDP3: Protective Layer
Chair:
Co-Chair:L. F. Weber, Consultant, USA
K. Ishii, NHK, Japan

PDP3 - 1:
15:50

Invited Mechanism of Seed Electron Emission fromMgO Nano-Powders for AC PDPs
J.-K. Kim, Y.-S. Kim*, L. F. Weber**Seoul Nat. Univ. of S&T, Korea*Hongik Univ., Korea**Consultant, USA

Seed electron currents emitted by voltage pulses were measured using
a highly-sensitive and fast-responding measuring apparatus. A shortburst of seed electrons was emitted from MgO nano-powders upon
voltage pulse application and its current density was ~4 orders ofmagnitude larger compared with that of exo-electron emission.
PDP3 - 2:
16:10

Invited Manufacture Issues of Implementing
CaxMg1-xO Protecting Layer for High Efficiency AC
PDPs
Q. Yan
COC Display Device, China

CaxMg1-xO(CMO) has a merit of generating high secondary electron
emission in high Xe content which results in high luminous efﬁcacy
PDP. The easy formation of CaCO3 and MgCO3 in manufacture process
is a big challenge to mass production. Both technique and cost issues
associated to this technology is discussed.

107

PDP

15:50 - 17:10

Thursday
PDP3 - 3
16:30

December 6
Effect of Space between Rib and MgO Film on
Temporal Image Sticking
S. NaganoSamsung SDI, Korea

Space between ribs and the discharge surface relaxes the brighttemporal image sticking caused by the residual charge that has been
accumulated through prior sustain discharge. Effective reset of thecharge around the longitudinal ribs could explain the phenomenon.
PDP3 - 4
16:50

Electron Trap Formation with UV Irradiation
H. Kajiyama*, H. Tanaka*,**, T. Matsuura*, A. Otomo**,
S. Inoue***Tokushima Bunri Univ., Japan**Hiroshima Univ., JapanThe control of trapped electrons in a protective layers is crucial tooptimize the exoelectron emission in ac-PDPs. This paper studies theelectron traps created by ultraviolet (UV) irradiation in the case of
MgSnO ﬁlms. It is shown the activation energy and electron
aggregation states depend on UV dose.
Author Interviews and Demonstrations
17:30 – 18:30
Sponsor:Plasma Display Technical Meeting

EuroDisplay 2013
September 16-19, 2013
Imperial College London
London, UK

Evening Get-Together
with Wine
Monday, December 3, 2012
18:00 – 20:00
at Restaurant “The Grill” (1F),
Kyoto International Conference Center(Sponsored by Merck Ltd., Japan)
See page 12 for details
108Thursday

December 6

Workshop on
EL Displays and Phosphors
Thursday, December 6
9:00 - 10:00

Room C-2

PH4: Phosphors Late News
Special Topics of Interest on Lighting Technologies
Chair:
Co-Chair:

D. Y. Jeon, KAIST, Korea
K. Hara, Shizuoka Univ., Japan

PH4 - 1L
9:00

A New Paradigm for Phosphor Discovery
K.-S. Sohn, W. B. Park, M. Ibukiyama*
Sunchon Nat. Univ., Korea*Denki Kagaku Kogyo, Japan

PH4 - 2L
9:15

Selecting a White Point Using (Y1-aGda)3Al5O12:Ce3+(Where a is in the Range 0.3 to 0.6) Phosphors on
Screens and Two Blue LEDs
J. Silver, R. Withnall, P. MarshBrunel Univ., UK(Y1-aGda)3Al5O12:Ce3+ (where a = 0.3 - 0.6) phosphors were synthesised,
incorporated into inks and screen printed. The phosphors were usedwith blue LEDs to produce white light. The color point of the white light
was ﬁne tuned by varying parameters including the gadolinium
concentration, phosphor layer thickness, and the LED emission
wavelength.
PH4 - 3L
9:30

Luminescence Properties of Novel Nitride-Based
Yellow Phosphor for White Light-Emitting Diodes
S. Takashina, A. Ohto
Mitsubishi Chem., Japan

We succeeded in synthesizing novel yellow phosphors with color
coordinates from x = 0.417 to 0.475. We investigated the emission
spectra of La3Si6N11:Ce and its derivatives (LSN). We were able tocreate 9000 ~ 4000 K white light-emissions by combining various
colored LSN and blue LEDs.

109

PH

We employed a non-dominated-sorting genetic algorithm (NSGA) for apreliminary screening of the multidimensional search space, andparticle swarm optimization (PSO) for the ensuing ﬁne-tuning. We also
created a parameter designating the novelty of the phosphors, the socalled structural rank, and used it as an objective function in the NSGA.

Thursday

December 6

PH4 - 4L
9:45

New Shape White LEDs with Uniform Hue
H. Daicho, A. Nomura, K. Enomoto, Y. Shinomiya,
S. Sugimori
Koito Manufacturing, Japan

We fabricated new shape white LEDs for general lighting. The whiteLEDs consist of a violet-chip and the thick phosphor layer, whichcontains blue and yellow emitting phosphors. The phosphor
concentration of the phosphor layer is low. The excellent hue uniformityof our white LED will reduce color binning.
----- Break ----14:00 - 15:20

Room C-1

PH1: Phosphors in EL
Chair:
Co-Chair:J. Silver, Brunel Univ., UK
K. Ohmi, Tottori Univ., Japan

PH1 - 1:
14:00

Invited Potential of SiC as a Rare-Earth-Free
Fluorescent Material
S. Kamiyama
Meijo Univ., Japan

Donor-acceptor-pair recombination mechanism in ﬂuorescent-SiC
doped with N and B were investigated. The control of C/Si ratio in thegrowth ambient was found to be important to suppress the nonradiative recombination and light absorption losses. The maximum
internal quantum efﬁciency of 40% was obtained, despite of no surface
passivation.
PH1 - 2:
14:30

Invited Design Considerations of Phosphor Layerfor a High Efficacy AC Powder EL
K. Wani, T. Kanda, E. Hashimoto
TAZMO, JapanAn AC powder EL that demonstrates high efﬁcacy of >20 lm/W using
original design method for the phosphor layer will be discussed. Newly
developed phosphor layer consists of organic-inorganic hybrid binder.
The design parameters and the performance of the experimental
device will be presented in detail.
PH1 - 3
15:00

Eco-Friendly AC Electroluminescent Lamps
R. Withnall, J. Silver, P. G. Harris
Brunel Univ., UK

AC electroluminescent lamps have been fabricated on biodegradable
substrates in order to investigate possibilities of minimising the waste
resulting from opto-electronic devices at the end of life. The
performance characteristics of these eco-friendly ACEL lamps havebeen investigated.
----- Break ----110

Thursday

December 6

15:50 - 17:30

Room C-1

PH2: Phosphors in General
Chair:
Co-Chair:K.-S. Sohn, Sunchon Nat. Univ., Korea
R. J. Xie, NIMS, JapanPH2 - 1:
15:50

Invited Phosphors for High Quality LED Lighting
H. Winkler, A. Benker, C. Hampel, R. Petry, A. Zych
Merck KGaA, Germany

In this paper we discuss the impact of dichromatic versus trichromatic
white LEDs on color rendition. Trichromatic LEDs offer a larger ﬂexibility
in color temperature alignment and much better color rendition. In
addition the color consistency of the LEDs is studied.
PH2 - 2:
16:20

Invited Novel Plasmonic Hybrid Phosphor for WhiteLight Emitting Diodes
K. C. Choi, S. M. Lee, M. Kim
KAIST, Korea

PH2 - 3
16:50

Suppression of SrGa2S4:Eu Phosphor Degradation
by Glass Coating and Adding ZnO Nanosize
Particles
M. Daimon, T. Yamasuge, T. Kusunoki
Dexerials, Japan

SrGa2S4:Eu phosphor has excellent optical properties. However, it
undergoes decomposition while releasing H2S that corrodes theelectrodes under hygrothermal conditions. Consequently, we attempted
to reduce its exposure to moisture by glass coating using the sol-gel
method and avoid to releasing H2S from the phosphor by adding ZnO
as adsorbent particles.
PH2 - 4
17:10

Synthesis and Luminescent Properties of Eu2+Doped La2Si6O3N8 Phosphors Prepared by Spark
Plasma Sintering
B. Kim, E.-H. Kang, S.-H. Hong
Seoul Nat. Univ., Korea

A new phosphor, bluish green emitting La2Si6O3N8:Eu2+ was
successfully prepared by SPS. The phase, morphology, andluminescence
properties
were
investigated. The
obtained
La2Si6O3N8:Eu2+ phosphors were excited at near UV region, andshowed a bluish green emission band centered at 485 nm. Also, thetemperature dependence of photoluminescence was measured.
111

PH

We demonstrated a plasmonic enhancement function of Au
nanoparticles for highly efﬁcient phosphor-converted white lightemitting diodes. Au nanoparticles selectively improved theluminescence intensity from visible lighting phosphors by spectral
overlap with localized surface plasmon resonance. The optimal
concentration of Au nanoparticles on yellow phosphors was estimatedthrough photoluminescence measurement.

Thu./Fri.

December 6/7

Author Interviews and Demonstrations
17:30 – 18:30

Friday, December 7
9:20 - 12:20

Event Hall

Poster PHp: Phosphors
Novel Oxynitride Phosphors; La4-xCaxSi12O3+xN18-x:Eu2+
and Ce4-xCaxSi12O3+xN18-x:Eu2+

PHp - 1W. B. Park, Y. Jeong, K.-S. Sohn
Sunchon Nat. Univ., Korea
The performance of the La4-xCaxSi12O3+xN18-x:Eu2+ and Ce4-xCaxSi12O3+xN18-x:Eu2+ phosphors was brilliant in terms of PL intensity and color
chromaticity at blue and UV excitations. The PL intensity and color
chromaticity of the La4-xCaxSi12O3+xN18-x:Eu2+ and Ce4-xCaxSi12O3+xN18-x:Eu2+ phosphors were comparable to commercially available yellow
phosphors for use in LED applications.
PHp - 2

Solid-State Combinatorial Screening of (Sr, Ba, Ca)(Y, La, Lu)Si4N7:Eu2+ Phosphors
Y. Jeong, W. B. Park, K. H. Son, K.-S. Sohn
Sunchon Nat. Univ., Korea
2+

ARSi4N7:Eu (A = Sr, Ca, Ba; R = Y, La, Lu), so as to obtain aquantitative structure and property relationship (QSPR) in a systematicmanner. Most of the samples constituting the double-ternary combichem library turned out to have ARSi4N7 structures with a P63mc spacegroup.
PHp - 3

Particle Swarm Optimization-Assisted Discovery ofa Novel Oxynitride Phosphor for Use in Light
Emitting Diodes and Its Structural Determination
Y. Song, K. H. Son, W. B. Park, K.-S. Sohn
Sunchon Nat. Univ., Korea

We discovered a novel oxynitride phosphor in the SrO-BaO-CaO-Si3N4
quaternary composition search space, and identiﬁed it as a monoclinic
structure in the C2/m space group. The exact structure andstoichiometry is now being determined, using direct method andensuing Rietvelt reﬁnement based on synchrotron X-ray diffractiondata.
PHp - 4112

WithdrawnFriday
PHp - 5

December 7
Synthesis of SrGa2S4:Eu Phosphors by
Solvothermal Sulfurization Method
K. Taniguchi, Y. Nishikata, A. Kato
Nagaoka Univ. of Tech., Japan

SrGa2S4:Eu ﬁne particles were obtained by sulfurizing SrGa2O4:Eu
nanoparticles synthesized by solvothermal method (solvothermal
sulfurization method). The ratio of residual oxygen is successfully
suppressed to the same level of solid state reaction. These SrGa2S4:Eu
ﬁne particles are expected to be utilized for inorganic
electroluminescent devices.
PHp - 6

Preparation of SrGa2S4:Eu Films by Spray Pyrolysis
Sulfurization Method
Y. Tani, A. Kato
Nagaoka Univ. of Tech., Japan

PHp - 7

Coating Method of ZnS Layer for InP Quantum Dot
by Solvothermal Method
S. Akiyama, N. Funaki, T. Kurabayashi, T. Fukuda,
N. Kamata, Y. Ishimaru
Saitama Univ., JapanA ZnS layer was coated around InP quantum dot (QD) by asolvothermal process. The photoluminescence (PL) quantum yield was
improved by optimizing the annealing temperature, and the highest
value was 42.2%. In addition, emission peak was changed from 532
nm to 629 nm by a size-sorting process.
PHp - 8Temperature Dependence of PL Excitation Spectraof BaMgAl10O17:Eu in VUV Region
K. Nakamura, T. Kunimoto*, T. Honma**, K. Ohmi
Tottori Univ., Japan*Tokushima Bunri Univ., Japan**JASRI, Japan

A temperature dependence of photoluminescence excitation spectra invacuum-UV (VUV) region has been investigated to clarify the deexcitation mechanism in BaMgAl10O17:Eu. The internal quantum
efﬁciency of the raw sample under VUV excitation is above 84%.
Contrary, that of the degraded sample baked at 700 C is mere 32%.

113

PH

SrGa2S4:Eu ﬁlms were obtained by sulfurizing ﬁlms prepared by spraypyrolysis method. The ﬁlms are identiﬁed to be SrGa2S4:Eu by powder
X-ray diffraction analyses and exhibit a broad emission around 530 nm
due to 5d-4f transition in Eu2+. These SrGa2S4:Eu ﬁlms are expected tobe utilized for inorganic electroluminescent devices.

Friday
PHp - 9December 7
Synthesis and Luminescence Properties of
Stoichiometry-Controlled YAGG:Ce P hosphors
under Vacuum UV Excitation
M. Wu, S. Choi, H.-K. Jung
Korea Res. Inst. of Chem. Tech., Korea

Ce-doped yttrium aluminum gallium garnet (Y3(Al,Ga)5O12:Ce3+,
YAGG:Ce) phosphors with the control of stoichiometry weresynthesized by solid-state method. Photoluminescence properties of
stoichiometry-controlled YAGG:Ce phosphors were investigated undervacuum UV excitation of 147 nm. The luminance of YAGG:Cephosphors with non-stoichiometric compositions were higher than thatof stoichiometric phosphor.
PHp - 10

Problem-Solving Methods of Design and Researchof the Thin Film Electroluminescent Element in
Indicator Devices
D. A. Evsevichev, O. V. Maksimova, S. M. Maksimov,
M. K. Samokhvalov
Ulyanovsk State Tech. Univ., Russia

Thin-ﬁlm electroluminescent display is one of the most promisingindicator devices. This article describes main charcteristics of those
displays and relations between them. The result of this research work is
the development of the computer-aided design system of the thin ﬁlm
electroluminescent element that solves design and research problems.
PHp - 11

Thin Film Perovskite Electroluminescence with
Ferroelectric BaTiO3 Films as Insulating Layers
H. Takashima, N. Miura*
AIST, Japan*Meiji Univ., Japan

Electroluminescence with BaTiO3(BTO) / ((Ca0.6Sr0.4)0.997Pr0.002)TiO3(PSCTO) / BTO thin ﬁlms at 1 kHz ac source was obtained with thedriving voltages around 8 V by visual estimation. With further increasing
driving voltages, intensity of electroluminescence dramaticallyincreased.
PHp - 12Preparation and PL/EL Property of Rare-Earth
Doped Perovskite Metal Oxide Nano Crystals Using
Supercritical Water Method
Y. Hakuta, K. Minami, M. Aoki, M. Ohara, K. Sue,Y. Takebayashi, S. Yoda, H. Takashima
AIST, Japan

We report that preparation and PL/EL property of Pr doped Perovskite
type metal oxide nanoparticles via supercritical hydrothermal synthesis
method. The particles obtained under supercritical water condition
were highly crystalline nanoparticles with Perovekite structure. These
particles showed bright red emission induced by both UV irradiation
and applying electric ﬁeld.
114

Friday
PHp - 13

December 7High Flexibility ACEL Lamps Printed Directly onto
ClothsR. Withnall, J. Silver, P. G. Harris
Brunel Univ., UK

ACEL lamps have been printed directly onto certain types of coatedcloths. These ACEL lamps exhibit high ﬂexibility and impressive
brightness and can be incorporated into clothing.
PHp - 14

Utilising Wavelength Converting Phosphor
Nanoparticles for Applications in Solar Cells
J. Silver, R. Withnall, T. G. Ireland, P. W. Reip*,
S. Subbiah*
Brunel Univ., UK*Intrinsiq Materials, UK

PHp - 15

Accelerated Ageing Studies of CaS:Eu2+ andSrS:Eu2+ Phosphors
R. Withnall, J. Silver, M. Ghazli, C. Catherall, J. J. Ojeda
Brunel Univ., UK

The stabilities of CaS:Eu2+ and SrS:Eu2+ phosphors have been studied
when they are subjected to accelerated ageing under conditions of
80% relative humidity and temperatures in the range of 50-80 C. The
stability of the CaS:Eu2+ phosphor with an ALD coating of Al2O3 is also
investigated.
PHp - 16

Effects of Phosphor Distribution and Step-Index
Remote Configuration on the Luminous Efficacy ofWarm White Light-Emitting Diodes
H.-Y. Tsai, T.-H. Liu, H.-Y. Kuo, H.-Y. Lin, S.-Y. Chu
Nat. Cheng Kung Univ., Taiwan

This paper demonstrated that Y down / R up type is the preferable
phosphor distribution for warm pc-WLEDs. Compared with common
warm pc-WLEDs using silicone gel as the remote layer, a step-index
remote conﬁguration proposed herein exhibited a superior luminous
efﬁcacy at 67.4262 lm/W under 350 mA.
PHp - 17

Withdrawn

115

PH

Nanometre sized phosphor particles have been produced on anindustrial scale. The phosphors can be used as wavelength convertors
in solar cells, and because they downconvert UV and blue light theyprotect the solar cells polymers from degradation thereby prolonging
cell life as well as increasing efﬁciency.

Friday
PHp - 18

December 7
Recent Progress in the Development of Ce3+Activated Fluorosulfide and Fluorooxysulfide
Phosphors for LED Lighting
T.-M. Chen, Y.-C. Wu, C.-S. Lee, S.-N. Chen
Nat. Chiao Tung Univ., Taiwan

Several novel Ce3+-activated Y2(Ca,Sr)F4S2, α- and β-YSF, andY3S2OF3 ﬂuorosulﬁde and ﬂuorooxysulﬁde phosphors, have beensynthesized and luminescence was investigated. Fluorosulﬁde-based
phosphors can be excited by blue light and shows yellow-to-orange
and red broadband emissions, respectively. Recent progress on thesynthesis and structure-luminescence relationship of these phosphors
is discussed.
PHp - 19

Selecting a Red Point Using CaS:Eu2+ andSrS:Eu2+ Phosphors on Screens and One Blue LED
J. Silver, R. Withnall, P. J. MarshBrunel Univ., UK

Screen printing inks containing various CaS:Eu2+:SrS:Eu2+ ratios wereprepared. The phosphors were printed on screens which were excitedby blue LED light to produce red emission. The color point of the red
light can be ﬁne tuned by varying the CaS:Eu2+:SrS:Eu2+ ratios, printed
phosphor thickness, particle size and morphology.
PHp - 20L

Photo-Luminescence of Carbon Nitride Films forApplication to White Light Emitting Device
M. Satake, J. Sawahata*, K. Itoh*, K. Takarabe**,K. Fukui***, S. Yamamoto
Ryukoku Univ., Japan*Tsuyama Nat. College of Tech., Japan**Okayama Univ. of Sci., Japan***Univ. of Fukui, Japan

We fabricated amorphous carbon nitride by radio-frequency sputtering
method. The results of PL have shown that the spectrum of the sample
grown in only N2 gas atmosphere has 400 nm – 650 nm wavelength,
while that of the sample grown in the mixture of N2, Ar, and CH4 gas
has 450 nm – 750 nm wavelength.
PHp - 21L

Evaluation of Distributed Inorganic
Electroluminescence (EL) Devices with Comb
Electrodes
T. Nonaka, Y. Uraoka*, N. Taguchi**, S. Yamamoto
Ryukoku Univ., Japan*NAIST, Japan**Image Tech, JapanIt may be possible to produce a display that does not requiretransparent electrodes by using the phosphor layer side of a device
with comb electrodes made of metals, such as Au, for the front side ofthe display.
116

Friday

December 7

PHp - 22L

Luminescence Properties of
Na0.34Ca0.66Al1.66Si2.34O8:Eu2+ Phosphor Synthesized
by Sol-Gel Method
G.-Y. Lee, J. Y. Han, W. B. Im*, S. H. Cheong,
A. Kirakosyan, D. Y. Jeon
KAIST, Korea*Chonnam Nat. Univ., Korea

A blue-emitting NaxCa1-xAl2-xSi2+xO8:Eu2+ (x = 0.34) (NCASO:Eu2+)
phosphor was developed by a sol-gel method. The phosphor shows abright blue emission peaking at 440nm under UV excitation. In addition,
the shape of PL changed and red-shifted due to energy transfer amongfour Eu sites as Eu2+ contents was increased.
PHp - 23L

Photoluminescent Properties of Mn-Doped Deep
Red Emitting Phosphors under Blue and UV
Excitations
H. Kominami, T. Ishinaga, Y. Nakanishi, K. Hara
Shizuoka Univ., Japan

PHp - 24L

Shape Evolution of CuInS2/ZnS Core/Shell
Nanocrystals during the Growth of ZnS Shell:
The Effect of Temperature and Zn Amount
Y. Kim, H. Kim*, E.-S. Kim, T. Lee, D. Y. Jeon
KAIST., Korea*Samsung Advanced Inst. of Tech., Korea

The evolution of morphology and luminescence of CuInS2/ZnS core/shell nanocrystals (NCs) during ZnS shell passivation were studied.
The reaction temperature was shown to directly determine themorphology of NCs from tetrahedron to cube, and the emission peak ofNCs was predominantly controlled by the amount of Zn.
----- Lunch ----15:50 - 17:20

Room B-2

PH3: Phosphors for Lighting
Special Topics of Interest on Lighting Technologies
Chair:
Co-Chair:T.-M. Chen, Nat. Chiao Tung Univ., Taiwan
T. Hisamune, Mitsubishi Chem., Japan

117

PH

Photoluminescent properties of Mg2(Ti0.99-x-y,Gex,Siy)O4:Mn phosphor for
white-LED was studied. The powders showed deep-red emission underblue-light excitation. The PL intensity depended on the ratio of IV
atoms. It was found that the multinary compounds showed higher
luminescence. It indicates that the deﬂection of the composition has
inﬂuence on the emission.

Friday
PH3 - 1:
15:50

December 7
Invited Progress in Developing High-Power InGaN
LEDs for Illumination
K. Bando
Nichia, Japan

High-power LEDs for general lightings are reviewed. Blue chip withhigh reﬂection structure is shown to have an excellent performance of
743 mW, EQE 77% at 350 mA. White chip exhibits 181 lm/W. New
technology such as phosphor coating on the chip topside andimproving CRI by multi-phosphor system are developed.
PH3 - 2
16:20

A Phosphor Sheet Providing Wider Color Gamut for
LCDs
Y. Ito, T. Hori, H. Tani, T. Kusunoki, H. Kondo
Dexerials, JapanA phosphor sheet in which thiogallate green and sulﬁde red phosphor
are contained has been developed. Good color gamut performance of
90% NTSC-xy can be realized by a LCD with that. It has moisturebarrier layers on the surface, which can reduce the reaction between
these phosphors and moisture.
PH3 - 3
16:40

Improved Display Color Gamut by Using theb-SiAlON Green Phosphor with an Asymmetric
Emission Spectrum
K. Yoshimura, K. Takahashi, H. Fukunaga, M. Harada,
Y. Tomomura, R.-J. Xie*, N. Hirosaki*, T. Takeda*
Sharp, Japan*NIMS, JapanThe effect of the emission spectrum shape of β-sialon(Si6-zAlzOzN8-z):
Eu2+ on the characteristics of liquid crystal display with LED backlight isanalyzed. The asymmetric spectrum which enhanced in accordancewith the decrease of z value is clariﬁed to contribute largely to theimprovement of display color gamut.
PH3 - 417:00

Si4+and Si4+-N3- Incorporation into YAG:Ce3+ and Its
Verification in Luminous Efficacy and Color
Rendering Enhancement of Phosphor-Converted
White Light-Emitting Diodes
T.-H. Liu, H.-Y. Kuo, H.-Y. Lin, S.-Y. Chu
Nat. Cheng Kung Univ., Taiwan

This paper demonstrated that the luminous efﬁcacy of the YAG-based
white light-emitting diode was improved from 74.3 to 83.7 lm/W with
substitution of 0.1 mol Si4+ for Al3+ while the color rendering index was
improved from 67.1 to 79.2 with substitution of 0.2 mol Al3+-O2- by
Si4+-N3- under 350 mA.
Author Interviews and Demonstrations
17:30 – 18:30
Supporting Organizations:
Phosphor Research Society, The Electrochemical Society of JapanThe 125th Research Committee on Mutual Conversion between
Light and Electricity, Japan Society for Promotion of Science118

Friday

December 7

Workshop on
Field Emission Display and CRT
Friday, December 7
9:00 - 9:10

Room C-1

Opening
Opening Remarks
9:00
M. Takai, Osaka Univ., Japan
9:10 - 10:40

Room C-1

FED1: CNT Emitters & Applications
Chair:
Co-Chair:H. Mimura, Shizuoka Univ., Japan
H. Shimawaki, Hachinohe Inst. of Tech., Japan

FED1 - 1:
9:10

Invited High Performance Field Emission from CNT
Based Point Emitters
D. H. Shin, Y. N. Song, Y. Sun, Y. M. Hwang, S. Y. Lee,
K.-N. Yun, J. H. Shin, C. J. Lee

FED

Korea Univ., Korea
CNT based point emitters are considered as a powerful candidate forhigh performance X-ray tube or electron beam source applications.
Because CNT point X-ray tube can promise high speed response time,a small electron beam spot and long lifetime. Here, we evaluate theirﬁeld emission properties and ﬁeld emission stability.
FED1 - 2
9:40

Evaluations for Processed Graphite Field Emittersand Its Applications
Y. Iwai, A. Jyouzuka, T. Koike, Y. Hayama, T. Nakamura,
Y. Onizuka, H. Mimura*
Onizuka Glass, Japan*Shizuoka Univ., JapanThe characteristics of processed graphite ﬁeld emitters named graphite
nanospines (GNS) and graphite ﬁeld emitter inﬂamed at hightemperature (GFEIHT) have been investigated. Those emitters canemit a relatively larger current of 2 mA. We also report X-ray tubes
using those emitters and its applications.

119Friday

December 7

FED1 - 3
10:00

Field Emission Property of Carbon Nanotube
Electron Source Using Side-Gate ElectrodeS. Nitta, S. Abo, F. Wakaya, M. Takai
Osaka Univ., Japan

A Carbon nanotube (CNT) electron source using side-gate electrodes
solves the issues of the gate metal structure in a gated CNT electron
source. In this study, CNT electron sources using side-gate electrodes
are fabricated and their ﬁeld emission characteristics are evaluated in a
triode conﬁguration.
FED1 - 4
10:20

Enhanced Field Emission Display with Carbon
Nanotube Emitters Grown by Resist-Assisted
Patterning Process
S. W. Lee, Y. J. Eom, C. Y. Kim*, C.-R. Lee*, J. Jang,
K. C. Park
Kyung Hee Univ., Korea*SNDisplay, Korea

Field emission display (FED) was fabricated with carbon nanotube(CNT) emitters grown by resist-assisted patterning (RAP) process.
Electron emission current uniformity was strongly improved byhomogenizing process with silicon-on glass (SOG). We fabricated 3-in.
FED with 32 µm sub-pixel size with the CNT emitters.
----- Break ----10:50 - 12:10

Room C-1

FED2: Applications & New Materials
Chair:
Co-Chair:M. Sasaki, Univ. of Tsukuba, JapanF. Wakaya, Osaka Univ., Japan

FED2 - 1
10:50

X-Ray Imaging Using an Electron BeamY. Neo, R. Suzuki, T. Aoki, H. Mimura
Shizuoka Univ., Japan

We present the results on X-ray imaging that consists of a CdTe
Schottky diode and a SEM. We investigated two methods for readingout. The output current varied linearly and nonlinearly with intensity andthe energy, respectively. In addition, an X-ray transmission image of a
200-µm stainless-steel mesh was obtained.

120

Friday

December 7

FED2 - 2
11:10

Vacuum Switch with Negative Electron Affinity of
Diamond p-i-n Electron Emitter
D. Takeuchi*,***,****, S. Koizumi**,****, T. Makino*,***,****,
H. Kato*,***,****, M. Ogura*,***,****, H. Okushi*,***,****,
H. Ohashi*,***,****, S. Yamasaki*,***,*****AIST, Japan**NIMS, Japan***JST-ALCA, Japan****JST-CREST, Japan

This paper presents experimental results of a vacuum switch withnegative electron afﬁnity of diamond p-i-n electron emitter with 10 kV
off and 13 V on-voltages at RT. A model for the vacuum switch proves aprinciple of vacuum switches over 100 kV with an efﬁciency beyond
99.9%.
FED2 - 3
11:30

Observation of Cathodoluminescence ofGermanium-Implanted Quartz Glass Excited by
Low-Energy Electrons Emitted from Silicon Field
Emitter Array
H. Tsuji, A. Sakata, G. Miyagawa, Y. Yasutomo, Y. Gotoh
Kyoto Univ., Japan

FED2 - 4
11:50

Cathodoluminescence in ((Ca0.6Sr0.4)0.997Pr0.002)TiO3
Perovskite Films
H. Takashima, M. Nagao
AIST, Japan

Thin-ﬁlm cathodoluminescence has been successfully obtained in thechemically stable perovskite oxide ((Ca0.6Sr0.4)0.997Pr0.002)TiO3 thin ﬁlms.
By using the ﬁeld emitter with a gate electrode for the source ofelectrons, high-quality red color and whole-surface intense
cathodoluminescence (CL) was observed.
----- Lunch ----14:00 - 15:20

Room C-1

FED3: Fabrication Processes
Chair:
Co-Chair:C. J. Lee, Korea Univ., Korea
Y. Gotoh, Kyoto Univ., Japan

121

FED

Cathodoluminescence of germanium implanted quartz glass wasinvestigated. An electron beam emitted from a silicon ﬁeld emitter array
was used to excite the sample. Violet-blue luminescence was observedat the electron energy of 240 eV.

Friday
FED3 - 1
14:00

December 7
Vertical Thin Film FEA for Large-Sized Applications
T. Yoshida, T. Nishi, M. Nagao
AIST, Japan

We have proposed simple fabrication of ﬁeld emitter array based onconventional thin ﬁlm process. In our method, a bending thin ﬁlm that isbent up by ion-beam irradiation is used as an emitter tip. The
advantage of our process is having high compatibility with MOS and
TFT processes.
FED3 - 2
14:20

Spindt-Emitter Fabrication without E-Beam
Deposition
T. Yoshida, M. Nagao, T. Nishi, N. Koda, T. Nakano*
AIST, Japan*Seikei Univ., JapanA new fabrication method of Spindt-type emitters will be presented. In
our method, a double-layered photoresist is used as a parting layer,
and high-power impulse magnetron sputtering is used instead ofe-beam evaporator for emitter-cone formation. The etch-back method isadopted to form the multi-gate electrodes on each emitter cone.
FED3 - 3
14:40

Selective-Area Growth and Field Emission
Properties of Titanium-Oxide Nanowires on Glass
Substrate
T. Nakatani, F. Wakaya, S. Abo, M. Takai
Osaka Univ., Japan

A two-dimensional array of a 10-µm-diameter Ti/Au disk with a pitch of
50 µm was prepared on a glass substrate by electron-beamlithography. Titanium-oxide nanostructures were fabricated by oxidation
and annealing of the array. Field-emission current was observed at an
applied electric ﬁeld over approximately 10 V/µm.
FED3 - 4
15:00

Effect of H2SO4 Concentration on Nano-Porous
Silicon Morphology and Electron Emission
Characteristic
X. Duan, X. Zhang, W. Wang, C. Liu,
Xi ’an Jiaotong Univ., China

Increasing the concentration of H2SO4 in ECO, oxide ﬁlm in porous
silicon becomes thicker. Crevices appear on the surface whenconcentration is not less than 1.5 mol/L. Samples without crevices havestable electron emission and good consistency. The maximum
emission current density and efﬁciency are 27.2 µA/cm2 and 5.9‰,
respectively.
----- Break -----

122

Friday

December 7

15:50 - 16:50

Room C-1

FED4: Fundamental Mechanisms
Chair:
Co-Chair:M. Takai, Osaka Univ., Japan
Y. Neo, Shizuoka Univ., Japan

FED4 - 1
15:50

Work Function Measurements of W(100) Surface
Modified by Scandium Oxide by Using
Photoemission Electron Microscopy and Field
Emission Microscopy
T. Kawakubo, H. Takeda*, H. Nakane*
Kagawa Nat. College of Tech., Japan*Muroran Inst. of Tech., Japan

It is well known that the work function of w(100) surface is reduced
after application of a very thin surface layer of transition metal andheating in an oxygen environment. In this research, we measured thework function of W(100) surface modiﬁed by Sc oxide by using PEEM
and FEM.
FED4 - 2
16:10

Field Emission from the Arc-Prepared Carbon Films
S. Horie, T. Endo, T. Higuchi, Y. Yamada, M. Sasaki
Univ. of Tsukuba, Japan

FED4 - 3
16:30

Photoassisted Electron Emission from MOS
Cathodes Based on Nanocrystalline Silicon
H. Shimawaki, Y. Neo*, H. Mimura*, F. Wakaya**,
M. Takai**
Hachinohe Inst. of Tech., Japan*Shizuoka Univ., Japan**Osaka Univ., Japan

We have investigated the photoresponse of electron emission frommetal-oxide-semiconductor (MOS) cathodes based on nanocrystalline
silicon (nc-Si) induced by blue diode laser pulses. The rise and falltimes of photoresponse were conﬁrmed at least less than 4 µs.
Author Interviews and Demonstrations
17:30 – 18:30
Sponsor:
JSPS 158th Committee on Vacuum Nanoelectronics

123

FED

We have found that the threshold ﬁeld for FE from a blunt W tip is much
reduced by coating it with the arc-prepared carbon ﬁlm. The FEM,
however, shows a featureless image, indicating no nano-protrusions.
The mechanism will be discussed on the basis of the FIM/FIM andSTM observations.

Thursday

December 6

Workshop on OLED Displays andRelated Technologies
Thursday, December 6
9:00 - 10:00

Room A

OLED1: Keynote and Future Trend
Chair:
Co-Chair:S. Naka, Univ. of Toyama, JapanT. Komatsu, Panasonic, Japan

OLED1 - 1: Invited OLED Display Market: What Is the Killer
9:00
Application?
J. Masuda
IHS-iSuppli, Japan
Small OLED (AMOLED) displays have become a popular choice inmobile devices. The market requires thinner lighter weight, improved
durability and reduced power. AMOLED is well positioned to satisfy
each of these requirements. For larger AMOLED TV displays the“killer” speciﬁcations could be improved power efﬁciency with excellent
image quality.
OLED1 - 2

Withdrawn

OLED1 - 3: Invited Light Extraction from OLEDs with Plasmonic
9:30
Structures
T. Okamoto
RIKEN, Japan
Three kinds of plasmonic structures for effectively extracting the lightenergy trapped as surface plasmons at the cathode surface of organic
light emitting diodes are proposed. The employed plasmonic structures
are a plasmonic crystal, a metal-insulator-metal layer, and a plasmonic
crystal combined with donor and acceptor layers.
----- Break ----10:50 - 12:25

Room A

OLED2: Micro OLED Display
Chair:
Co-Chair:

124

K. Monzen, Nissan Chem., Japan
Y. Kijima, Sony, JapanThursday

December 6

OLED2 - 1: Invited High-Brightness and High Resolution
10:50
AMOLED Microdisplay
A. Ghosh, I. Wacyk, T. Ali, I. Khayrullin, O. Prache,
S. Zeismer
eMagin, USAeMaginʼs new generation AMOLED microdisplays, including a full color
9.6 µm pixel pitch WUXGA (1920x1200), 9.6 µm pixel pitch SXGA-096(1280x1024) high brightness (>27,000 cd/m2) green microdisplay andan 8.1 µm pixel pitch SXGA test device is presented. These developments
are aimed at next-generation “see-through” and daylight imaging
HMDs.
OLED2 - 2: Invited High Resolution OLED Microdisplays for
11:15
Electronic Vision Systems
G. Haas, E. Marcellin-Dibon
MICROOLED, France
We discuss some of the technical challenges related to OLED
microdisplay design and manufacturing, and present results obtainedon our 0.38-in. diagonal WVGA display with 1.7 millions independent
subpixels as well as on our 0.61-in. diagonal SXGA microdisplay with
5.4 millions of independent subpixels.
OLED2 - 3
11:40

Organic Microdisplays for Interactive Head-Mounted
Applications
K. Fehse, C. Schmidt, M. Thomschke, R. Herold,
B. Richter, U. Vogel
Fraunhofer IPMS, Germany

OLED2 - 4L: Invited 0.5-In. XGA Micro-OLED Display on a Silicon
12:00
Backplane with High Definition and High
Performance
J. Yamada, Y. Onoyama, E. Kambe, J. Yamashita,
H. Kitagawa, E. Hasegawa, A. Makita, S. Yokoyama,
R. Asaki, M. Nakamura, T. Nishimura, K. Uchino,
S. Makimura, Y. Shiraishi, T. Urabe
Sony, Japan
We have developed a high-deﬁnition (0.5-in. XGA) Micro-OLED displaythat employs a new pixel driving circuit and a new high-efﬁcient andstable top-emitting white OLED. These technologies were incorporated
in the worldʼs ﬁrst XGA OLED electronic viewﬁnder for digital singlelens cameras and HD-personal 3D viewer with two 720p Micro-OLED
displays.
----- Lunch ----125

OLEDThis paper deals with the development of an OLED microdisplay thatprovides integrated photodiodes within the CMOS backplane. By using
electrically doped charge transport layer as well as a white emitter
system with color ﬁlter, the VGA microdisplay achieves several ordersof luminance with RGBW sub pixel concept.

Thursday

December 6

14:00 - 17:00

Event Hall

Poster OLEDp: OLED Technologies
OLEDp - 1

The Effect of Inorganic/Organic Hybrid QuantumWell Structure on Efficient White Organic Light
Emitting Devices
Y.-C. Chen, M.-H. Wu, S.-Y. Chu, P.-C. Kao*Nat. Cheng Kung Univ., Taiwan*Nat. Chiayi Univ., Taiwan

In this study, the effect of MQW structures adopting inorganic material(sodium ﬂuoride) has been demonstrated. Brightness, current
efﬁciency was signiﬁcantly enhanced with a NaF/NPB MQW structure
being inserted. The admittance spectroscopy was measured to explain
the different mechanism of reducing hole between organic/organic
inorganic/organic MQW structures.
OLEDp - 2

Ultra Violet OLED with Organic Fluorescent DownConversion Layer: Fabrication of White OLED
H.-W. Lu, P.-C. Kuo*, S.-Y. Chu
Nat. Cheng Kung Univ., Taiwan*Nat. Chiayi Univ., Taiwan

WOLEDs have been considered as a promising candidate of solidstate lighting for two decades. The UV-OLEDs have been studied, andadopted ﬂuorescent materials as down-conversion layer on the backside of the ITO substrate. A wide area of the WOLEDs has been
demonstrated and the CIE coordinates achieves (0.28,0.33).
OLEDp - 3

High Efficiency and Low Efficiency Roll-Off White
Phosphorescent Organic Light-Emitting Devices
with Double Emissive Layers
B. Y. Lin, Y. H. Lan*, T.-L. Chiu**, C.-F. Lin*, J. H. Lee
Nat. Taiwan Univ., Taiwan*Nat. United Univ., Taiwan**Yuan Ze Univ., Taiwan

We reported a high efﬁciency and low efﬁciency roll-off white
phosphorescent organic light-emitting device (WPHOLED) with double
emitting layer (DEML) as base. The white OLED exhibited a peakcurrent efﬁciency of 45.37 cd/A, power efﬁciency of 35.64 lm/W, andexternal quantum efﬁciency (EQE) of 17.06%, respectively.

126

Thursday
OLEDp - 4

December 6
TRZ-Based Material as the Host of Blue
Phosphorescent Organic Light-Emitting Device
T. Y. Hung, Y. H. Lan*, B. Y. Lin, P. Yin, T. L. Chiu**,
M. K. Leung, C. F. Lin*, J. H. Lee
Nat. Taiwan Univ., Taiwan*Nat. United Univ., Taiwan**Yuan Ze Univ., Taiwan

We fabricated organic light emitting devices (OLED) with 2,4,6triphenyl-1,3,5-triazne (TRZ) as the host of the emitting layer (EML). In
this paper we will discuss the performance of TRZ devices on
difference concentrations.
OLEDp - 5

Durable Ag Alloy Reflective Anode Electrodes for
Top Emission Organic Light-Emitting Diodes
H. Goto, Y. Shida, Y. Iwanari, Y. Tauchi, E. Kusumoto*,
T. Kugimiya
Kobe Steel, Japan*Kobelco Res. Inst., Japan

We have developed highly reﬂective and oxidation resistive Ag-Zn alloy
reﬂective anode electrodes for top emission organic light-emitting
diodes (OLEDs). The reﬂectivity of the stacked ITO/Ag-Zn/ITO
electrode was virtually unchanged after UV irradiation due to ZnObarrier layer formation against oxygen diffusion.
OLEDp - 6

Study of Luminance and Thermal Distribution in
OLEDs
M. Shibasaki, T. Tamura, M. Inui, Y. Azuma, T. Satoh,T. Uchida

We studied the luminance and thermal distributions in organic lightemitting diodes (OLEDs) and examined their relationship. In
transparent OLEDs, luminance degradation at the cathode wasremarkable and an area of high thermal distribution was observed. We
have demonstrated that a full cover sealing OLEDs have better thermal
distribution characteristics.
OLEDp - 7

Comparison among Various Hole-Injection Layers inBlue Organic Light Emitting DiodeY.-T. Chuang, T.-L. Chiu, P.-Y. Lee, C.-F. Lin*, J.-H. Lee**
Yuan Ze Univ., Taiwan*Nat. United Univ. Taiwan**Nat. Taiwan Univ., Taiwan

The MoO3, WO3, and mCP doped with them MoO3:mCP; WO3:mCP
were employed as hole injection layers to probe the hole injection
behavior and pursue the better electro-optical performance of blueorganic light-emitting diodes. The optimized thickness of hole injection
layer beneﬁts the reduction in operational voltage and signiﬁcantly
enhancement in efﬁciency.

127

OLED

Tokyo Polytechnic Univ., JapanThursday
OLEDp - 8

December 6
Luminance Enhancements in OLEDs Using a TiO2
Electron Injection Buffer
T. Matsuzaki, Y. Seki, Y. Yasuda, Y. Sawada, Y. Hoshi,
T. Uchida
Tokyo Polytechnic Univ., Japan

We studied the luminance enhancement in OLEDs with TiO2-coated
ITO, in terms of the energy band diagram and surface morphology
around the cathode, and reported the electron-injection enhancement
in electron-only devices. When using TiO2-coated ITO as the electroninjection material, the electrode work function varied from 4.7 to 4.4 eV.
OLEDp - 9

Deposition of Thin Film of Benzene or Naphthalene
by Plasma Polymerization and Application to
Organic Light Emitting Devices
Y. Takahashi, H. Kanai, Y. Sato, S. Yoshikado
Doshisha Univ., Japan

Thin ﬁlms applicable to organic light emitting devices were depositedby plasma polymerization of benzene or naphthalene monomers byradio frequency discharge. The effects of the monomer gas pressure
and species on the properties of the polymerized ﬁlm were
investigated. Electroluminescence of blue color from naphthalene thinﬁlm was observed.
OLEDp - 10 Design of Insulator Material for Stable Operation ofOrganic Field Effect Transistors
K. Suemori, T. Kamata
AIST, Japan
Stability of an organic ﬁeld-effect transistor with respect to its gate bias
stress is degraded by the roughness, long-chain chemical species, anddipoles of the insulator surface. We found that the surface of apolystyrene thin ﬁlm fabricated on a SiO2 insulator does not have these
instability factors.
OLEDp - 11 Effect of MoO3 Hole-Injection Layers on the
Performance of Top-Gate Organic Transistors Basedon Soluble Benzothienobenzothiophene Derivatives
F. Mochizuki, Y. Miyata, T. Nagase, T. Kobayashi,
K. Takimiya*, M. Ikeda**,***, H. Naito
Osaka Pref. Univ., Japan*Hiroshima Univ., Japan**Nippon Kayaku, Japan***Kyusyu Univ., Japan

Effect of MoO3 hole-injection layers on the electrical characteristics of
top-gate C8-BTBT OFETs has been investigated. The ﬁeld-effectmobility of short-channel devices is improved by inserting 1-nm-thick
MoO3 layers, as a result of the decrease in contact resistance. The
dependence of the electrical characteristics on MoO3 thickness is also
investigated.

128

Thursday

December 6

OLEDp - 12 Materials for Enhancing External Light Out-Coupling
Efficiency of Organic Light-Emitting Diodes
P.-C. Chien, I.-L. Kao, Y.-L. Hsu, P.-C. Chen
ITRI, Taiwan
The purpose of this study was to present a simple and low cost method
which has a good balance between improvement of OLEDs light
extraction efﬁciency and suppression of color shift at various viewing
angle by attaching scattering ﬁlms with porous particles.
OLEDp - 13 Very-High Color Rendering Index OLEDs with
Natural Light-Style Spectrum
J.-H. Jou, J.-R. Tseng, F.-C. Yang, C.-T. Chen, H.-W. Liu,
S.-P. Chen*, H.-W. Hung*, J.-Y. Li*, M.-C. Liu*
Nat. Tsing Hua Univ., Taiwan*ITRI, Taiwan
Natural light-style OLEDs with both color rendering index (CRI) andhigh sunlight spectrum resemblance (SSR) will be presented. The
feasibility of fabricating quality light sources with very-high CRI andvery-high SSR at any designated color temperature warrants OLED to
be the ultimate lighting technique.
OLEDp - 14 Novel Carbazole-Substituted Anthracene
Derivatives for Non-Doped Blue Light Emitting
DiodesR.-H. Lee, Y.-G. Chen, Y.-C. Chang, Y.-C. Chen*,
J.-T. Lin*, R.-J. Jeng**

Three anthracene derivatives featuring carbazole moieties as sidegroups were synthesized for use in blue organic light emitting devices.
The highest brightness (6821 cd/m2) was that for the tCz9PhAnt-based
device; the greatest current efﬁciency (2.1 cd/A) was that for thetCz9Ph2Ant-based device.
OLEDp - 15 Light Extraction Enhancing Buffer Layers for
Organic Light-Emitting Diodes
H. J. Cho, H.-N. Lee
Soonchunhyang Univ., Korea
Numerical simulations and experiments were conducted to study thelight outcoupling enhancement effects based on electrode-buffer
structures. Thin tungsten-oxide buffer and titanium-oxide buffer
increased the outcoupling noticeably. However, thick buffers decreased
the outcoupling. The combined effects of the constructive interference
and the creation of additional bound modes explain these behaviors.

129

OLED

Nat. Chung Hsing Univ., Taiwan*Academia Sinica, Taiwan**Nat. Taiwan Univ., Taiwan

Thu./Fri.

December 6/7

OLEDp - 16L Highly Efficient Polymer Light-Emitting Diodes with
Conjugated Polyelectrolyte Electron Injection
Layers Using Combined Solution Processing
Techniques
H. Chang*, M. Suh*, S. W. Kim*, J.-S. Kim*,**, D. Y. Jeon**KAIST, Korea**Imperial College London, UK

Herein, highly efﬁcient PLEDs with CPE EILs were demonstrated by
combining two different solution processing techniques. Upon
annealing of F8BT active layer, the surface contrast was reduced by
40%. Consequent reduction produces 1.6 times higher luminous
efﬁciency (9.30 Cd/A at 3.6 V) compared to the device without thermal
treatment.
OLEDp - 17L Achieve White Light by Utilizing Interface Defects
on Simplified Ultraviolet Organic Light Emitting
Diodes
H.-L. Weng, S.-Y. Chu, P.-C. Kao*, Y.-C. Chen
Nat. Cheng Kung Univ., Taiwan*Nat. Chiayi Univ., Taiwan

A simpliﬁed bilayer ultraviolet organic light emitting diode(UV-OLED)with broadband spectrum has been demonstrated. This device
achieved a near-white light at high voltages. The recombination zone
has been known by inserting ultrathin ﬁlm of Rubrene. The
electroluminescence spectra was measured to elucidate therecombination zone shift by voltage increasing.
OLEDp - 18L Highly Efficient Green Phosphorescent Iridium
Complex Based on Thieno[3,2-c]Pyridine Ligand
T.-C. Chao, M.-H. Chang, J.-S. Lin, J.-Y. Liao,
M.-R. Tseng
ITRI, Taiwan
A series of novel green phosphorescent dopants containing
thieno[3,2-c]pyridine-based
ligands
weresynthesizedandcharacterized. Green devices with efﬁcacies of 56 cd/A and 39 lm/W
were reported with the brightness of 1447 nits. When double emitting
layers were adopted, the efﬁcacy was improved to 63 cd/A and 44 lm/
W@1257 nits.
Author Interviews and Demonstrations
17:30 – 18:30

Friday, December 7
9:00 - 10:25

Room A

OLED3: OLED for Lighting Application(Special Topics of Interest on Lighting Technologies)
Chair:
Co-Chair:130

Y. Kijima, Sony, JapanT. Ikuta, JNC Petrochem., Japan

Friday

December 7

OLED3 - 1: Invited Design of Backplanes and Optical
9:00
Enhancement Structure for Large-Area OLEDLighting Panels
M.-H. Ho, C.-C. Lin, Y.-C. Chin, C.-C. Chen, M.-T. Lee,
T.-Y. Cho, C.-W. Chen
AU Optronics, Taiwan
We demonstrate a novel design for large-area OLED lighting panelswith low electrode resistance and short reduction to achieve highbrightness uniformity with both low power efﬁciency loss and highproduction yield. In addition, efﬁciency of OLED lighting panels can befurther enhanced by applying internal extraction layer between
transparent electrodes and substrate.
OLED3 - 2
9:25

Highly Efficient White OLEDs with Single SolutionProcessed Emitting Layer Consisting of Three Kinds
of Dopants
H. Sakuma, S. Nobuki, S. Ishihara, S. Aratani, A. Sano,
K. Kobayashi
Hitachi, Japan

We achieved a highly efﬁcient white organic light emitting diode with asingle emitting layer consisting of three kinds of dopants. The emitting
layer was fabricated with a one-step solution coating process. A
maximum power efﬁciency of 70 lm/W was obtained by applying highﬂuorescence quantum yield dopants and improving light extraction
efﬁciency.
OLED3 - 3
9:45

Improving the Performance of Solution-Processed
Green Phosphorescent OLEDs Using EL Spectra
AnalysisToshiba, Japan
Emission regions in solution-processed green phosphorescent OLEDs
have been estimated by analyzing their electroluminescent (EL)spectra. The performance of the OLEDs has been improved by
optimization of device structure based on the analysis.
OLED3 - 4
10:05

A New 2-Dimensional OLED Circuit Modeling for
Obtaining Uniform Brightness in Large Area OLEDLighting Panels
J.-H. Han, J. Moon, J. W. Huh, D.-H. Cho, J.-W. Shin,
C. W. Joo, J. Hwang, B. J. Lee, S. K. Park, J.-T. Ahn,
N. S. Cho, H. Y. Chu, J.-I. Lee
ETRI, Korea

We report on a new 2-dimensional OLED circuit modeling method for
obtaining uniform brightness across large area OLED lighting panels.
Our method is very useful in predicting the brightness distributions withdifferent panel shapes and sizes. Our simulation results have beensuccessfully applied to fabricate panel with high brightness uniformity.
----- Break ----131

OLED

T. Sugizaki, Y. Shinjo, A. Amano, T. Yonehara, Y. Mizuno,
S. Enomoto, I. Amemiya

Friday

December 7

10:50 - 12:15

Room A

OLED4: Materials and Devices
Chair:
Co-Chair:T. Wakimoto, Merck, Japan
H. Kuma, Idemitsu Kosan, Japan

OLED4 - 1: Invited Recent Progress on Polymer LED Materials
10:50
T. Yamada, Y. Tsubata, K. Ohuchi, D. Fukushima,
N. Akino, R. Wilson*, M. Roberts*, I. Grizzi*
Sumitomo Chem., Japan*Cambridge Display Tech., UK
Through intense studies of device physics and chemistry including
triplet dynamics in polymer system, we established commercial-useready p-OLED material which is well suitable for printing fabrication of
OLED display. We also established the p-OLED printing technology
based on precise micro-cavity design through ink-jet printing.
OLED4 - 2
11:15

New Hole Transport Materials for Solution
Processing and Vacuum Deposition
J. Birnstock, M. Zöllner, T. Canzler, Z. Wang, U. Denker,
K. Lederer
Novaled AG, Germany

Latest results in the development of hole transport layer materials for
OLEDs are presented. For both types of deposition techniques new
materials will be introduced: For solution processing techniques suchas slot-dye coating or ink-jet printing and for vacuum deposition
techniques such as thermal evaporation or organic vapor phase
deposition.
OLED4 - 3
11:35

Mixed Host Concepts in Triplet Green Applications
A. Jatsch, C. Pflumm, J. Kröber, A. Parham, P. Stößel,J. Kaiser, T. Eberle, E. Böhm, H. Buchholz
Merck KGaA, Germany

Two different mixed host concepts are discussed for triplet green
applications. Addition of a wide-bandgap or hole-transporting co-host to
an electron-transporting host material leads to a remarkable
improvement on performance data, especially in external quantum
efﬁciency, roll-off and lifetime.

132

Friday

December 7

OLED4 - 4
11:55

Oxadiazole Derivatives for Blue Phosphorescent
Organic Light-Emitting Diode by Partially Doping
Techniques
Y. H. Liu, Y. H. Lan*, W. H. Yang**, M. K. Leung**,
M. K. Wei, T. L. Chiu***, C. F. Lin*, J. H. Lee**Nat. Dong Hwa Univ., Taiwan*Nat. United Univ., Taiwan**Nat. Taiwan Univ., Taiwan***Yuan Ze Univ., Taiwan

In this paper, we fabricated high efﬁciency blue phosphorescent OLED
using greenish-blue emitter iridium(III)bis[4,6-di-ﬂuorophenyl-pyridinato-N,
C2]picolinate (FIrpic) and oxadiazole derivatives (OXD) as host withgood electron-transporting properties. High current efﬁciency of 40.05
cd/A was reached by partially doped EML, improving charge balance ofdevice.
----- Lunch ----14:00 - 15:05

Room A

OLED5: Display Technologies (1)Chair:
Co-Chair:

K. Nakayama, Yamagata Univ., JapanT. Uchida, Tokyo Polytechnic Univ., Japan

OLED5 - 1: Invited Crystalline Organic TFTs for Active-Matrix
14:00
Display Panels
J. Takeya*,**, T. Uemura*, M. Uno***, Y. Kanaoka***This presentation focuses on development of organic single-crystal
transistors which have realized high charge carrier mobility exceeding
10 cm2/Vs. Materials, solution-patterning processes, and themechanism of charge carrier transport are discussed so that the newclass of organic semiconductors offers practical high-performancedevices in ﬂexible and printed electronics industries.
OLED5 - 2
14:25

Electrical Modeling of a Full Stack Fluorescent Dual
Emitter White PIN OLED
K. Bouzid, H. Doyeux, H. Kanaan
CEA LETI, FranceElectrical modeling of a full stack ﬂuorescent dual emitter (blue +yellow) emitter white PIN OLED is performed using a commercial
software and a set of material parameters obtained by extraction fromsingle carrier devices JV curves. Simulation outputs show JVcharacteristics matching experimental JV curves and a consistentbehavior.

133

OLED

*Osaka Univ., Japan**Ctr. for High-End Molecular Semiconductors, Japan***TRI Osaka, Japan

Friday

December 7

OLED5 - 3
14:45

Detection of a Space-Charge Region in an Organic
Photoconductive Sensor
W. Woestenborghs, P. D. Visschere, F. Beunis, K. Neyts,
A. Vetsuypens*
Ghent Univ., Belgium*Barco, Belgium

In our contribution we will present a transparent photoconductive
sensor based on organic materials. The performance of thephotoconductive sensor will be demonstrated by electrical and spectral
response measurements. The existence of a high-ﬁeld space charge
region near the cathode will be shown by means of local illumination
measurements.
----- Break ----15:50 - 17:15

Room A

OLDE6: Display Technologies (2)Chair:
Co-Chair:S. Enomoto, Toshiba, Japan
T. Shimizu, NHK, Japan

OLED6 - 1: Invited TFT Backplane Technologies with Low
15:50
Temperature Process for Flexible AMOLED
H.-H. Hsieh, C.-S. Yang, C.-J. Liu, C.-H. Tsai, C.-H. Fang,
C.-S. Chuang
AU Optronics, Taiwan
In this presentation, two TFT backplane technologies with low
temperature process will be introduced. Firstly, the Oxide TFTs basedon ITZO channel layer with high mobility (>20 cm2/Vs) and goodstability will be discussed. Secondly, the ultra-low-temperature polycrystalline silicon TFTs and a 4.0-in. ﬂexible AMOLED will be
investigated.
OLED6 - 2

Withdrawn

OLED6 - 5L Electron Injection-Properties of RT-Deposited
16:15
Amorphous 12CaO·7Al2O3 Electride Thin Film for
OLED
S. Watanabe, T. Watanabe, K. Ito, N. Miyakawa, S. Ito*,Y. Toda*, H. Hosono*
Asahi Glass, Japan*Tokyo Inst. of Tech., Japan
RT deposited thin ﬁlms of amorphous 12CaO·7Al2O3 electride were
found to possess a small work function of ~3.1 eV by directly observing
ultraviolet photoelectrons. The resulting ﬁlms were transparent,
chemically inert and workable as an electron injection layer to Alq3 witha Schottky barrier height of ~0.9 eV.

134

Friday

December 7

OLED6 - 3
16:35

Low Power Consumption of OLED Displays with
Highly Efficient Sky Blue
Y. Kim, H. Kim, J. Yoo, K. Lee, J. Lee, B. Lee, S. Yoon,
I. Kang
LG Display, Korea

We present a 4 color pixel structure incorporating a red, green, deep
blue(B) and sky blue(b) and a related driving scheme sharing a sky
blue and deep blue within neighboring pixels. An addition of the highly
efﬁcient sky blue into a conventional RGB structure could reduce thepower consumption of AMOLEDs dramatically.
OLED6 - 4
16:55

OLED Based 3D Eyetracking See-Through DataGlasses
R. Herold, J. Baumgarten, K. Fehse, U. Vogel,
S. Weber*, U. Heinrich*Fraunhofer IPMS, Germany*Interactive Minds, Germany

This paper describes the conceptual design and a possible applicationof OLED based 3D eyetracking see-through data-glasses. This
lightweight system enables the user to see virtual 3D objects and tointeract with these objects in 3D. For example, to touch, move andzoom a virtual building by using the eyes.
Author Interviews and Demonstrations
17:30 – 18:30

OLED

IDW Best Paper AwardIDW Outstanding
Poster Paper Award
These awards will go to the most outstanding papers
selected from those presented at IDW/AD ’12.
The 2012 award winners will be announced on the
IDW website: http://www.idw.ne.jp/award.html
135TuesdayDecember 4Workshop on 3D/Hyper-Realistic
Displays and Systems
Tuesday, December 4
14:20 - 15:50

Room B-2

3D1: Ray-Space Analysis
Chair:
Co-Chair:Y. Takaki, Tokyo Univ. of A&T, Japan
M. Tsuchida, NTT, Japan

3D1 - 1:
14:20

Invited Light Field Analysis of Autostereoscopic
Three-Dimensional Displays
J.-H. Park
Chungbuk Nat. Univ., Korea

Light ﬁeld reconstruction characteristics of various autostereoscopic
three-dimensional displays are analyzed. Quality of the displayed threedimensional images including resolution and depth range can beaddressed based on the light ﬁeld analysis.
3D1 - 2
14:50

Stereoscopic Viewing Space Analysis Based on
Interocular Differences in Contrast
T. Horikoshi, S. Kimura
NTT DoCoMo, Japan

We use the interocular differences in contrast to propose a new index“Stereo Contrast”. This index is simple and permits direct comparisonof different types of 3D displays. Based on this index, we design a7-view type 3D display for mobile use.
3D1 - 3
15:10

Viewing Space Diagrams to Evaluate AutoStereoscopic 3D Displays
K. Nakao, T. Higano, N. Kanda, H. Wakemoto
Japan Display Central, JapanThe mechanism of 3D perception has been clariﬁed using patternmatching method. We have proposed Categorized Viewing Space
Diagram for 3D perception based on the method. In this paper someviewing space diagrams are proposed to evaluate 3D displays. Theseviewing space diagrams show overall properties of auto-stereoscopic
displays.

136

TuesdayDecember 4

3D1 - 415:30

Depth Resolution in 3-D Image
J.-Y. Son, M.-C. Park*, C.-H. Lee**, O. O. Chernyshov,W.-H. Son***Konyang Univ., Korea*KIST, Korea**Joongbu Univ., Korea***Elect. & Telecommun. Res. Inst., Korea

The depth resolution in 3-dimensional images is analyzed. The
resolution depends mainly on the camera distance and input pupil
diameter of each camera. The periodic line arrays aligned in depth
direction informs that the experimentally deﬁned resolution values
match well with those predicted theoretically.
----- Break ----16:10 - 17:50

Room B-2

3D2: Holography
Chair:
Co-Chair:J.-Y. Son, Konyang Univ., Korea
M. Tsuboi, NTT DoCoMo, Japan

3D2 - 1:
16:10

Invited Holographic Display Module Using 4k2k-SLM
Y. Takaki
Tokyo Univ. of A&T, JapanA holographic display module with a viewing zone angle and screen
size of 10.5 and 2.0 inches, respectively, was developed using a 4k2kSLM. Resolution redistribution technique was employed. Moreover, themodule has a frameless screen, so that multiple modules can bearranged seamlessly to increase the screen size.
3D2 - 2:
16:40

Invited Fully Updatable Three-Dimensional
Holographic Display Device Using Photorefractive
Compounds
N. Tsutsumi, K. Kinashi, W. Sakai

3D

Kyoto Inst. of Tech., Japan
We will present quickly updatable real-time holographic imaging using
photorefractive polymer composite device. Photorefractive polymer
composite device can be easily fabricated and is easily handling with
ﬂexibility. Real object and object image on special light modulator wasrecorded in the photorefractive polymer device and simultaneously
reconstructed and over-recorded.

137

Tue./Wed.
3D2 - 3
17:10

December 4/5
Wavefront-Type 3D Display with 8k × 8k Binary
Phase Distribution from CG Data
O. Matoba, N. Ueda, K. Nitta, K. Fukue*, M. Sasada*,
K. Ueta*
Kobe Univ., Japan*Dainippon Screen Mfg., Japan

Binary phase distribution with 8k x 8k pixels is calculated fromcomputer graphics data for wavefront-type 3D display. We evaluate
numerically the quality of reconstructed 3D objects by using binary
phase distribution.
3D2 - 4
17:30

Complex Modulation Using a Phase Only SLM
G.Y. Sung, H. Song, S. Choi*, K. Won, H. Kim*, H.-S. Lee
Samsung Advanced Inst. of Tech., Korea*Korea Univ., Korea

In this paper, a novel complex SLM architecture using two-phase
encoding technique is proposed. The complex SLM consists of single
phase SLM and a pair of cylindrical lens with phase grating. Two pixels
of a phase SLM can be coupled via phase grating to modulate theamplitude and phase simultaneously.
Author Interviews and Demonstrations
17:50 – 18:50

Wednesday, December 5
9:00 - 10:20

Room B-1

3D3/VHF3: 3D Crosstalk Evaluation
Chair:
Co-Chair:J.-H. Park, Chungbuk Nat. Univ., Korea
T. Kurita, NHK, Japan

3D3/
VHF3 - 1
9:00

Perceptual Correspondence of Gray-to-Gray
Crosstalk Equations for Stereoscopic Displays
Z. Xia, X. Li, Y. Cui, L. Chen, K. Teunissen*Southeast Univ., China*TP Vision, the Netherlands

Although several crosstalk deﬁnitions have been proposed to indicate
the level of crosstalk in stereoscopic displays, they do not necessarily
correlate with perceived crosstalk. Based on perception experiments,
we studied the correlation between ten objective crosstalk equations
and perceived crosstalk for four glasses-based stereoscopic displays
while using several gray-to-gray transitions.

138

Wednesday

December 5
Visibility Thresholds for Crosstalk on Stereoscopic
Displays

3D3/
VHF3 - 2
9:20

Y.-Y. Ko, Y.-L. Chen, Y.-J. Chang, C.-W. Chen, R.-L. Rong
AU Optronics, Taiwan

Crosstalk is one of the critical factors determining the viewing quality
and comfort in stereoscopic displays. This study tried to ﬁnd out therelationship between crosstalk and related factors, like parallax angle
and spatial frequency, and proposed psychophysics and ergonomic
method to obtain the crosstalk threshold trend of human eyes.
Camera-Based Cross-Talk and Uniformity
Measurement of Multi-View Autostereoscopic 3D
Display

3D3/
VHF3 - 3
9:40

C.-F. Hung, F.-C. Tsai, C.-P. Ho
AU Optronics, Taiwan
This paper presents a camera-based approach with a uniformity
measurement function to quantify the uniformity and the crosstalkcharacteristic of a multi-view autostereoscopic 3D display. The results
show that the proposed method can efﬁciently and accurately measureboth the global and local uniformity characteristic of the 3D display.
A Novel Method to Evaluate the 3D Crosstalk of
Stereoscopic 3D Display

3D3/
VHF3 - 4
10:00

H.-T. Lin, S.-C. Lin, C.-C. Chiu
Chunghwa Picture Tubes, Taiwan

In this paper, we proposed a method to evaluate the quality of 3D
display by using gray-to-gray crosstalk, through the formula convert thebrightness of crosstalk into human perceptual response, and we also
proposed some check patterns to make observer to evaluate the grayto-gray 3D crosstalk easily and efﬁciently.
----- Break ----10:50 - 12:05

Room B-1

3D

3D4/VHF4: 3D Image Quality (1)Chair:
Co-Chair:T. Horikoshi, NTT DoCoMo, Japan
A. Yoshida, Sharp, Japan

3D4/
VHF4 - 1
10:50

Quality Control of Active Glass 3D Displays Using
Temporal Measurements
P. Boher, T. Leroux, T. Bignon, P. Blanc*
ELDIM, France*Labs. d’ Essais de la FNAC, France

Quality control of active glasses 3D TVs is performed using highaccuracy and high temporal resolution luminance measurements
versus time. The two main parasitic effects on such displays, crosstalkand ﬂicker are derived for different couples of gray levels applied.
Quality criteria for ghost effect and ﬂicker visibility are derived.
139

Wednesday

December 5
New Crosstalk Index of Shutter Glasses 3D Display

3D4/
VHF4 - 2
11:10

C. W. Chen, Q. Liao, C. C. Hsiao
Shenzen China Star Optoelect. Tech., China

A concept of universal crosstalk index for stereoscopic 3D display was
proposed. Conventional crosstalk of shutter glasses 3D could betransferred to the new crosstalk index that could be comparable withthe crosstalk index of patterned retarder 3D. The new crosstalk index
was also investigated by human perceptive experiment.
The Use of a Small-Sized Autostereoscopic Display:
Context Influence on User Experiences

3D4/
VHF4 - 3
11:30

M. Pölönen, M. Salmimaa
Nokia, Finland

92 participants viewed stereoscopic content on a small-sizedautostereoscopic display in four different environments. The results
indicate that the context of use did not inﬂuence user experiences,
particularly with regard to eyestrain or motion-induced sickness levels,
but context of use had some inﬂuence on image quality.
High Resolution Multi-View 3D Display Based on
Active Optical Device

3D4/
VHF4 - 4L
11:50

K. Choi, Y. Choi, Y. Kim, Y. Kwon, J. Bae
Samsung Elect., Korea

This paper review system architectures for displaying a 3-dimensional
image, based on a time multiplexing scheme. More particularly, anapparatus for displaying a 3D image, capable of providing a natural 3D
display with a simple structure using an active optical device (or active
optical element) capable of changing a path of light.
----- Lunch ----15:50 - 17:10

Room B-1

VHF5/3D5: 3D Image Quality (2)Chair:
Co-Chair:N. Hiruma, NHK, JapanK. Yamamoto, NICT, Japan

VHF5/
3D5 - 1
15:50

Stereo-Resolution Analysis Based on Reading
Performance
Y.-Y. Lai, S.-F. Y. Mao
ITRI, Taiwan

The reading performance is used to analyze the stereo-resolution in
the stereoscopic display. In this paper, static and dynamic experimental
designs were proposed to detect the stereo-resolution of stereoscopic
display. From the results, reading performance could be a method toassess the property of stereo-resolution.

140

Wed./Thu.

December 5/6
The Quantization of 3D Resolution Based on Human
Perception

VHF5/
3D5 - 2
16:10

Y.-L. Chen, C.-W. Chen, R.-L. Dong
AU Optronics, Taiwan

This is a novel study tried to quantify 3D resolution based on humanperceptual judgment. Take resolution-related font size changes asstimuli, we found the reduced resolution in 3D would deteriorate
perceptual clarity. The perceptual 3D resolution and better resolution
design of 3D display were proposed.
3D Depth Detection in Multi-View Displays

VHF5/
3D5 - 3
16:30

S.-F. Yang-Mao, Y.-T. Lin, T.-M. Wang, C.-H. Ho,
H.-W. Chen, C.-S. Wu
ITRI, Taiwan

We propose a new design of testing for stereoscopic performance
estimation between multi-view displays. Testing results show thatparallel multi-view display has lower depth JND than convergent multiview display; in other words, more depth details can be perceived in
multi-view display with parallel optical beam on conﬁguration of 36-rays.
Accommodation Response of Super Multi-View
Display Using Directional Light in Monocular
Condition

VHF5/
3D5 - 4
16:50

J.-H. Jung, J. Kim, S.-G. Park, S. Y. Choi*, D. Nam*,
B. LeeSeoul Nat. Univ., Korea*Samsung Advanced Inst. of Tech., Korea

Accommodation responses in a monocular condition are measured in asuper multi-view display composed of telecentric lens, spatial light
modulator and relay optics. The ideal case of super multi-view display
is implemented and its induction of accommodation response inmonocular eye is veriﬁed by the accommodation measurement using
autorefractometer.

3D

Author Interviews and Demonstrations
17:30 – 18:30

Thursday, December 6
10:50 - 12:30

Room B-1

3D6: Digital Museum of Kyoto Gion Festival
Special Topics of Interest on Augmented Reality
Chair:
Co-Chair:

M. Tsuchida, NTT, JapanK. Makita, AIST, Japan141

Thursday
3D6 - 1:
10:50

December 6
Invited Digital Museum of Gion Festival within
Virtual Kyoto
K. Yano, T. Seto, D. Kawahara*
Ritsumeikan Univ., Japan*CAD Ctr., Japan

Virtual Kyoto is a historical virtual geographic environment of thehistorical city of Kyoto, which aims at reconstruction and visualizationof the cityʼs historical landscapes. This paper introduces Digital
Museum of Gion Festival which represents Kyotoʼs culture andtradition, based on Virtual Kyoto.
3D6 - 2:
11:15

Invited A Virtual Tour of Gion Festival Yamahoko
ParadeL. Li, W. Choi*, K. Hachimura, T. Nishiura, K. Yano
Ritsumeikan Univ., Japan*Gunma Nat. College of Tech., Japan

We tried to virtually reproduce Yamahoko Parade in Kyoto Gion
Festival, which has been registered in the list of “Intangible Heritage of
Humanity” by UNESCO. This work contributes to the research of digital
museum and provides a platform that allows the users to virtuallyexperience the atmosphere of the event.
3D6 - 3:
11:40

Invited Particle-Based Translucent Visualization of
Funeboko for the Gion Festival
S. Tanaka, M. Uemura, M. Yamamoto, K. Hasegawa,S. Nakata
Ritsumeikan Univ., Japan

We translucently visualize laser-scanned 3D point data of the
Funeboko ﬂoat for the Gion Festival (Kyoto). We use the particle-based
surface rendering, which we recently proposed, regarding the scanned
points as particles. Our approach enables precise and comprehensible
translucent visualization of the complex internal 3D structure of
Funeboko.
3D6 - 4:
12:05

Invited Digital Archiving and Large-Scale VisuoHaptic Display of Large 3D Woven Cultural Artifacts
W. Wakita, M. Tsuchida*, J. Yamato*, H. T. Tanaka
Ritsumeikan Univ., Japan*NTT, Japan

We have measured large 3D woven cultural artifacts with rail-wheel 3D
scanning system, and captured high-resolution images with a two-shot
type 6-band image capturing system, and modeled woven cultural
artifacts in 3D. This paper describes a digital archiving and large-scalevisuo-haptic display of large 3D woven cultural artifacts.
----- Lunch -----

142

Thursday

December 6

14:00 - 17:00

Event Hall

Poster 3Dp: 3D/Hyper-Realistic Displays and Systems
3Dp - 1

Perceived Depth Change of Depth-Fused 3D Displayby Changing Distance between Front and Rear
Plane
A. Tsunakawa, T. Soumiya, Y. Horikawa, H. Yamamoto,
S. Suyama
Univ. of Tokushima, JapanWe estimated the dependence of the perceived depth by increasing
distance between front and rear plane. When the distance was large,
perceived depth was near front plane at 0~40% of rear luminance, andperceived depth was near rear plane at 60~100% of rear luminance.
3Dp - 2

Interference Experiment for 3D and 2D Discernment
J.-H. Gu, J.-K. Liau, J.-W. Huang, Y.-L. Wang, H.-Y. Chen
Nat. Kaohsiung First Univ. of S&T, Taiwan

3D image recognition is higher than the 2D image, the main reason isthat human eye obtain image depth of space recognition about object
by 3D. It not infected with light source to change and backgroundenvironment, conform feature of the human visual. So improvedisadvantage of recognizable on 2D image.
3Dp - 3

Withdrawn

3Dp - 4

To Reduce the Flicker and Crosstalk by Outputting
the Data Frame Rate of 130 Hz on the Shutter-Type
3D Display
L. Liao, P. Lin, Y. Chen
Shenzhen China Star Optoelect. Tech., China

143

3D

The ﬂicker caused by room light is now still an important issue atshutter-type 3D LCD. Therefore, we propose a 130 Hz system including
2 frames memories and one over-driving LUT to reduce the ﬂicker and3D crosstalk effectively.

Thursday
3Dp - 5

December 6
While Viewing 3D Video-Clips, Accommodative
Focus and Convergence are in Harmony with Virtual
Image Position
M. Miyao, T. Shiomi, T. Kojima, K. Uemoto, H. Ishio*,
H. Takada**
Nagoya Univ., Japan*Fukuyama City Univ., Japan**Univ. of Fukui, Japan

We carried out the experiments to compare ﬁxation distances between
accommodation and convergence in young and middle-aged subjects
while they viewed 2D and 3D video clips. When subjects are young,accommodative power for 3D images is similar to the distance of
convergence and virtual positions.
3Dp - 6

Evaluate Visual Comfort of 2D/3D Mixing Contents
on 3D Glasses-Free Panel
Y.-J. Li, H.-S. Chen, C.-W. Chen*, Y.-L. Chen*,
R.-L. Dong*
Nat. Taiwan Univ. of S&T, Taiwan*AU Optronics, Taiwan

The 2D/3D mixing mode on 3D glasses-free panel will allow us tocreate more potential contents. To evaluate the comfortable disparity
range in 2D text and 3D picture mixing content on 3D glasses-freepanel, there are two approaches designed in this paper.
3Dp - 7

A Study of Visual Fatigue When Viewing 3D Images
with Pseudoscopic Vision
H. IsonoTokyo Denki Univ., Japan

The present study examined visual fatigue when viewing 3D images
with pseudoscopic and normal stereoscopic vision through objective
assessment of changes in time required to accommodate the eyes andsubjective assessment using the SD method. We also measuredchanges in cerebral blood ﬂow when viewing 3D images using NIRS
apparatus.
3Dp - 8
3Dp - 9Withdrawn
Color Analysis for Lens Type 3D Display
C.-T. Chang, W.-L. Chen, C.-H. Shih, W.-M. Huang
AU Optronics, Taiwan

The intensity distribution of a lens type 3D display is the most important
property characterizing the 3D performance and is highly discussed inmost papers. In this paper, we qualitatively and quantitatively discuss
the color distribution of lens type 3D displays to more completely
describe and further improve its performance.

144

Thursday
3Dp - 10December 6
New Applications of Viewing Angle Polarization
Analysis for Characterization of Displays
P. M. Boher, T. Leroux, T. Bignon, V. Collomb-Patton
ELDIM, France

ELDIM proposes viewing angle and imaging instruments capable tomeasure the polarization state of the light in addition to luminance,color or radiance. We use these instruments hereafter to characterize
auto-stereoscopic and passive 3D displays to understand better thelimits and the defects of each type of technology.
3Dp - 11

Full Screen 3D Visual Uniformity Design for theMulti-View Slant LC Barrierautostereoscopic
Display
C. Pan, H. Cui, B. Li, D. Li, J. Wang, T.-C. Chung, T. S. Jen
Infovision Optoelect., China

We propose an approach for optimizing the slant barrier parameters ofmulti-view autostereoscopic displays to achieve a high quality 3D
image. The slant barrier parameter optimization method is discussed. A
3-D display, 9-view 55-inch model of 3840 x 2160pixel was designed,
the effect of the multi-view barrier system is ideal.
3Dp - 12Still Gamma and Single Eye Overdrive for
Eliminating Crosstalk in Shutter-Type 3D Display
Y. ChenShenzhen China Star Optoelect. Tech., China

To drive the LC to 240 Hz frame rate and separate the BLU into a lot ofscanning regions donʼt completely solve the crosstalk issue. Therefore,
we propose a new structure including several mapping LUTs andsingle eye overdrive to create the low crosstalk on low cost ﬂash BLU
system.
3Dp - 13

An Integrated Back-End System Design for
Autostereoscopic Display
M.-C. Weng, Y.-C. Chen, H.-H. Chen, H.-M. Su

3D

Chunghwa Picture Tubes, Taiwan
Chunghwa Picture Tubes has successfully developed the 7-in. 3Dlenticular lens panel. In addition, the single-chip 3D controller that
integrates T-CON and 3D converter functions will develop as soon as
possible. It can make lower total system hardware cost and better
ability of lower power states in advance.

145Thursday
3Dp - 14

December 6
Lighting Position Dependence and Observation
Angle Dependence of Perceived Depth in Arc 3-D
Display
N. Yamada, C. Maeda, S. Suyama, H. Yamamoto
Univ. of Tokushima, Japan

The perceived depth is increased as lighting angle decreases. Whenan observer effectively moves to right and left, the perceived depth isdecreased as the angle increases. Our theoretical depth and position
coincide with the measured values, even when the light and observer
are positioned at center or not.
3Dp - 15

Active Retarder 3D Display Technology
C.-W. Li, C.-H. Hsu, C.-Y. Fang, C.-H. Yeh, W.-T. Liao,
W.-J. Tsai, F.-C. Wu, W.-C. Wang, L.-H. Tsai
WINTEK, Taiwan

Active Retarder is a novel glasses type 3D technology that uses
polarized glasses with light weight and has full resolution 3D image. In
this paper, we present a novel electrode design of Active Retarder toimprove the cross-talk issue.
3Dp - 16

Dynamic Wavefront Changes by a Liquid-Crystal
Prism
F. Kimura, T. Yamamoto, S. Toyama, S. Suyama, I. Ishii*,
H. Yamamoto
Univ. of Tokushima, Japan*Hiroshima Univ., Japan

We have fabricated a liquid-crystal (LC) prism based on a new LC
motion for a fast optical deﬂector. In order to investigate distribution ofeffective index difference, in this paper, we observe dynamic wavefrontchanges of transmitted light through an LC deﬂector by use of a highspeed camera.
3Dp - 17

Withdrawn

3Dp - 18

Full Resolution Auto-Stereoscopic Active Barrier 3D
Liquid Crystal Display
H.-C. Tseng, M.-K. Kang, I.-F. Wang, K.-C. Lee, C.-H. Yu
HannStar Display, Taiwan

In order to break through current technical predicament so we provide
more additional values for the photo electricity industry. This plan
proposes a kind of full resolution auto-stereoscopic 3D display. This
technology possesses not only spatial-multiplexed but also timemultiplexed characteristic.
3Dp - 19

146

Withdrawn

Thursday
3Dp - 20

December 6
Experimental Estimation of the Dihedral Corner
Reflector Array for Floating Imaging
K. Nitta, K. Ogawa, T. Akashi, O. Matoba, S. Maekawa*
Kobe Univ., Japan*NICT, Japan

Imaging characteristics of the dihedral corner reﬂector array are
estimated with experiments and simulations. An optical system forexperimental estimations is constructed. From results, it is shown thatthese results are not similar. Then, we discuss on a fabrication errors
as a factor to blur the point image.
3Dp - 21

Thermal and Visual 3D Display by Use of CrossedMirror Array
R. Kujime, S. Suyama, H. Yamamoto
Univ. of Tokushima, JapanWe utilize a crossed-mirror array (CMA) for a 3D display of heat andlight. Our developed CMA composed of hollow apertures and converge
visible light and infrared radiation to the image position. The proposed
3D display shows an aerial visual image that makes us feel warmthwhen it is touched.
3Dp - 22

Volumetric Display Based on Three-Dimensional
Optical Scanning of an Inclined Image Plane Usingan Image Rotator
Y. Maeda, D. Miyazaki, T. Mukai
Osaka City Univ., Japan

We propose to use a rotational scanning method for a volumetric threedimensional (3D) display based on optical scanning of an inclined
image plane. A 3D image is created from a stack of an image plane
moved by an image rotator. The size of the 3D displayable space was
1400 cm3.
3Dp - 23

Autostereoscopic 3D Pictures on OpticallyRewritable Electronic Paper

Hong Kong Univ. of S&T, Hong Kong
Autostereoscopic 3D image was obtained in our lab by means ofbonding the lenticular lenses array to the optically rewritable (ORW)
electronic paper (E-paper). The two different but related images can be
simultaneously seen by right eye and left eye respectively, thus forming
the 3D image in one's mind.

147

3D

X. Wang, L. Wang, J. Sun, A. Srivastava, V. G. Chigrinov,
H.-S. Kwok

Thursday
3Dp - 24

December 6
3D Display by Wavefront Reconstruction Using 1D
Binary Spatial Light Modulator with RectangleShape Pixel
A. Ueno, K. Kobayashi, K. Nitta, O. Matoba, K. Fukue*,
M. Sasada*, K. Ueta*
Kobe Univ., Japan*Dainippon Screen Mfg., Japan

Reconstruction quality of 3D display by wavefront reconstruction using
1D spatial light modulator with rectangle-shape pixel is evaluated.
Scanning along the vertical direction is required for constructing a 3D
display system. The broadening by diffraction along the verticaldirection is evaluated by changing the size of rectangle-shaped pixel.
3Dp - 25

Holographic Collimator for Reconstruction of
Display Holograms
H. T. Lin, W.-C. Su, Y.-W. WangNat. Changhua Univ. of Education, Taiwan

A compact holographic collimator is presented for the reconstruction of
display holograms. Diffracted 3D image from a display hologram can beobserved through the illumination of it. A compact active holographic
display can be achieved by switching the internal light source of it tocontrol diffraction of the 3D image.
3Dp - 26

Special-Purpose Computer HORN-7 with FPGATechnology for Phase Modulation Type ElectroHolography
N. Okada, D. Hirai, Y. Ichihashi*, A. Shiraki **, T. Kakue ,T. Shimobaba, N. Masuda, T. Ito
Chiba Univ., Japan*NICT, Japan**Kisarazu Nat. College of Tech., JapanAn electro holography is one of the techniques for achieving threedimensional television. We developed special-purpose computer
HORN-7 for kinoform, which records the phase information of an object
light. The HORN-7 can create a 2M pixels hologram of 16,000 object
points in 0.4 sec.
3Dp - 27

Accelerating Computational Time of Image
Reconstruction Process of Parallel Phase-Shifting
Digital Holography by GPU with CUDA
T. Kakue, T. Shimobaba, N. Masuda, T. Ito
Chiba Univ., Japan

We succeeded in accelerating computational time of image
reconstruction process of parallel phase-shifting digital holography. A
GPU with CUDA can achieve 12 and 14 faster computational timesof phase-shifting interferometry and angular spectrum method in theprocess than a CPU, respectively.

148

Thursday
3Dp - 28

December 6
Stereo Video Rectification by Using Interpolated
Homography Matrixes
T.-H. Lin
Nat. Taiwan Univ. of S&T, Taiwan

This paper addresses a rectiﬁcation method for stereo videos which
are captured with varying physical parameters. Our method linearlyinterpolates homography matrixes by decomposition of the rectiﬁcation
matrixes of key frames. The result shows our method can rectify stereo
videos and has smoother transition effects than the traditional methods.
3Dp - 29

Augmented Reality Head-Up-Display
S.-W. Cheng, C.-B. Chiang, Y.-F. Su, J.-T. Hsu
Automotive Res. & Testing Ctr., Taiwan

We developed an augmented reality heads-up display system in thisstudy. That displays integrated messages including overlapped imageof lane marking and information of preceding vehicles on 5 meters infront of windshield. The system will also be veriﬁed for its feasibility
through software simulation and prototype production.
3Dp - 30

Fatige-Proof Intelligent Shoot-Right 3D Video
Recording System-AUOSOME-3D
C. P. Chen, C. P. Lin, T. Y. Wu, C. C. Yu, H. Lee,Y. H. Chen, J. L. Tung*, C. W. Chen*, N. W. Chang*,
I. L. Chen*, C. H. Wen**, P. L. Sun**, H. H. Chen**Nat. Taiwan Univ., Taiwan*AU Optronics, Taiwan**Nat. Taiwan Univ. of S&T, Taiwan

AUOSOME is an automatic 3D stereo ﬁlming system solving problems
encountered in 3D ﬁlming process, making captured video right andcomfortable to view. We performed an automatic camera positioning
system ensure disparities be in comfort zone and real-time stereo
image correction process, including color correction, horizontalalignment and rotation calibration.
Fast Parallel Computation of Computer-Generated
Hologram Using a Multi-GPU Environmental PC
N. Takada, T. Shimobaba*, A. Sugiyama*, N. Okada*,
H. Nakayama**, A. Shiraki***, N. Masuda*, T. Ito*
Kochi Univ., Japan*Chiba Univ., Japan**VASA Entertainment, Japan***Kisarazu Nat. College of Tech., Japan
Electroholography using a computer-generated hologram (CGH) is theultimate technique for realizing 3-D television. We implemented an
optimized CGH computation in our multi-GPU environmental PC withfour GPUs. In the case of 3D object composed of 10,240 points, oursystem is 215 times faster than a CPU.

149

3D

3Dp - 31L

Thursday

December 6

3Dp - 32L

Three Dimensional Display Incorporated with Active
Retarder Using 90° Twisted Alignment andHorizontal Electric Field
S. Kim, T. Kim, S.-W. Choi
Kyung Hee Univ., Korea

We propose a three dimensional (3D) display incorporated with active
retarder (AR) using 90 twisted alignment and horizontal electric ﬁeld.
From the results of simulation, our AR-3D display exhibited relatively
better performance than the previously proposed AR-3D display using
horizontal electric ﬁeld.
3Dp - 33L

Study of Autostereoscopic Imaging Performancewith Respect to Specifications of Lens Arrays andPolarization Light in the Integral Photography
System
C.-H. Yang*, W.-Y. Lu*, Y.-H. Hsu*, C.-J. Hsu*,
C.-R. Sheu*,***Nat. Cheng Kung Univ., Taiwan

We investigate imaging performance of integral photography (IP)system with two types of lens arrays with hexagonal and square units,
respectively. Simultaneously, we also experimentally observe effects ofpolarization light used in pickup and reconstruction to discuss thepossible issues if the LC lens arrays are used to process IP.
3Dp - 34L

Quantitative Verification of Its Spatial Frequency
when Enlarging the Image Captured with an IP
CameraY. Ichihashi, H. Sasaki, T. Senoh, K. Yamamoto
NICT, Japan

In this paper, we describe effects on a spatial frequency of areconstructed image when enlarging an image captured with an IP(integral photography) camera. We conducted experiments in IP
images to enlarge with two different methods. In the results, there is aslight difference between the two reconstructed images.
3Dp - 35L

Accommodation and Distance Perception for
Floating LED Image Formed by a Crossed-Mirror
Array
Y. Horikawa, T. Ogura, T. Soumiya, R. Kujime,
H. Yamamoto, S. Suyama
Univ. of Tokushima, Japan

We have fabricated a crossed-mirror array (CMA) for imaging of an
LED panel. Accommodation responses and perceived distance for theﬂoating LED image formed by the CMA have been investigatedexperimentally. We report that accommodation and perceived distance
ﬂuctuate between the CMA and the optically formed image position.
Author Interviews and Demonstrations
17:30 – 18:30
150

Friday

December 7
Friday, December 7

9:00 - 10:20

Room E

3D7: Novel 3D Approach
Chair:
Co-Chair:

Y.-P. Huang, Nat. Chiao Tung Univ., Taiwan
Y. Ichihashi, NICT, Japan

3D7 - 1
9:00

A Moiré Display
V. Saveljev, S.-K. Kim
KIST, Korea

A display technique is proposed with a useful visual image created bymoiré patterns. The methods to control the visual image using the
afﬁne transformations of gratings are proposed and conﬁrmed
experimentally. The extension of the current two-dimensional display toa three dimensional one is also suggested.
3D7 - 2
9:20

Reconstruction of Dynamic Digital Holographic
Image Using Modified Gerchberg-Saxton Algorithm
G.-S. Huang, Q.-L. Deng*, H.-T. Chang, H.-E. Hwang**,
C.-Y. Chen
Nat. Yunlin Univ. of S&T, Taiwan*Nat. Chiao Tung Univ., Taiwan**Chung Chou Univ. of S&T, Taiwan

The display system of dynamic grayscale holographic movie wasprojected by using Modiﬁed Gerchberg-Saxton Algorithm with theoriginal three-dimensional images. After the analysis of image quality,
the output image of visibility was about 0.91 in visual area, thediffraction efﬁciency was about 54% and the speckle contrast was
about 10%.
3D7 - 3
9:40

Analysis on the Characteristics of Multi-View
Display System and Eye Detection-Based Crosstalk
Reduction
J. Park, D. Nam

3D

Samsung Advanced Inst. of Tech., Korea
To eliminate inter-view crosstalk in multi-view displays, we havesuggested an eye detection-based algorithm. It is very effective in
reducing the crosstalk, but it can cause color inconsistency along theviewing direction. In this paper, we analyze causes for the artifacts andpropose a solution to this problem.

151

Friday

December 7

3D7 - 4
10:00

EEG Measurement of 3D Cognitive Fatigue Caused
by Viewing Mobile 3D Content
S. Mun*,***, M.-C. Park*,***, S. Cho**,***, S. Yano*****Univ. of S&T, Korea**Korea Univ., Korea***KIST, Korea****Shimane Univ., Japan

3D visual fatigue has been evaluated to ensure 3D image safety.
However, it has seldom been tested on 3D mobile displays. This study
was aimed at investigating changes of evoked-potentials in the preand post-mobile 3D viewing conditions and determining association
between 3D visual fatigue and perceived immersion.
----- Break ----10:50 - 12:20

Room E

3D8: Device and Approach for 3D Display
Chair:
Co-Chair:S. Iwasawa, NICT, Japan
H. Yamamoto, Tokushima Univ., Japan

3D8 - 1:
10:50

Invited Development of Time-Multiplexed Backlighton Auto-Stereoscopic LCD for Multi-User andWide-Viewing Angle Function
Y.-P. Huang, C.-H. Ting, C.-Y. Hsu, C.-H. Yang
Nat. Chiao Tung Univ., Taiwan

A multi-user 3D ﬁlm was proposed to add in front of the directionalsequential backlight system and make the display for three users.
Furthermore, a high resolution time-multiplexed backlight with tracking
system for multi-user applicable wide-viewing auto-stereoscopic LCD
was proposed.
3D8 - 2
11:20

A High Resolution Multi-View 3D Display Using
Switchable Liquid Crystal Lens
Y. Yang, T. Koito, N. Takasaki
Japan Display West, Japan

We have developed a six view 3D display of high 3D resolution above
170 ppi. A liquid crystal lens with strong optical focal strength has beendeveloped. By using the liquid crystal lens, low crosstalk multi view 3D
display has been realized.
3D8 - 3
11:40

Study on Crosstalk Improvement of TN-LC Parallax
Barrier Type Autostereoscopic Display
C.-Y. Chen, B.-S. Lin*, Q.-L. Deng*, J.-K. Siao, H.-W. Lin
Nat. Yunlin Univ. of S&T, Taiwan*Nat. Chiao Tung Univ., Taiwan

The twisted nematic liquid crystal to replace the conventional grating
on an autostereoscopic panel. This study analyzes the crosstalk effectwith different widths of slit pitch of grating at different viewing distancesfrom 30 cm to 150 cm. From the simulation results, the crosstalk
reduces down to 3.5% at each position.
152

Friday

December 7

3D8 - 4
12:00

A Method of Improving the Flicker in Low Frequency
Time-Sequential 3D Display
C. Ye, C.-K. Chang, B. Fang, J. Qiu, C.-C. Lin
Shenzhen China Star Optoelect. Tech., China

We decrease the frequency of display, to improve the crosstalk.
However, lower display frequency will make the ﬂicker be observed byhuman eyes more easily. Hence a method of improving ﬂicker isrequired. The result shows that the ﬂicker and crosstalk are both
improved by adding on additional backlight pulse.
----- Lunch ----14:00 - 15:30

Room E

3D9: Ray-Based Realistic 3D Display
Chair:
Co-Chair:

M.-C. Park, KIST, Korea
T. Koike, Hitachi, Japan

3D9 - 1:
14:00

Invited Behind the Screen of NICT’s 200-in.
Automultiscopic Display
S. Iwasawa, M. Kawakita
NICT, Japan

NICT developed the automultiscopic display technology whose
prototype has a 200-in. large screen with a signiﬁcant number ofviewpoints or horizontal parallax images. The observed images of the
prototype display are practically ﬂipping-free despite the existence oftightly packed multiple viewpoints.
3D9 - 2
14:30

Autostereoscopic Display with Parallel Light Rays
Using Multi-Projectors and Lenticular Screen
C.-Y. Chen, C.-J. Chou, S.-C. Cheng, C.-S. Wu,
Y.-H. Chen, Y.-H. Chou, C.-H. Tsai
ITRI, Taiwan

3D9 - 3
14:50

Reduction of Moiré in Multilayer Integral Imaging
Display
Y. Ueda, H. Kakeya
Univ. of Tsukuba, Japan

This paper proposes moiré reduction method for multilayer integral
imaging display. Moiré pattern, which is distinct in conventional
multilayer integral imaging, can be obscured by adding another layer ofconvex lens array with short focal length just in front of the layered
display panels.

153

3D

This paper proposed a projection-type auto-stereoscopic display. The
screen which the key component converts the diverged light rays fromeach projector to parallel light rays of different direction. Theintersections of the light rays form the points of object to be displayed.

Friday

December 7

3D9 - 4
15:10

Hybrid Full-Resolution 3D Display Using TimeSequential 8.0-in. WVGA OCB-LCD
H. Miki, D. Suzuki, N. Kanda, S. Araki, E. Higano,
K. Nishiyama, K. Nakao
Japan Display Central, Japan

We have developed hybrid 3D display; autostereoscopic and glasses
mode are in one system, using time-sequential OCB and directional
backlight. Both modes can show full-resolution 3D image, especiallywith glasses we can see 3D crosstalk-free images. Furthermore, wehave got the prospect for reducing 3D crosstalk of autostereoscopy.
----- Break ----15:50 - 16:25

Room E

3D10: Quality Evaluation
Chair:
Co-Chair:

C.-Y. Chen, ITRI, Taiwan
T. Mishina, NHK, Japan

3D10 - 1
15:50

Empirical Investigation Based on Depth Cues for
2D-to-3D Conversion Evaluations
C.-H. Wen, Y.-H. Li, S.-L. Tsai, Y.-L. Chen*, C.-W. Chen*,
R.-L.Dong*
Nat. Taiwan Univ. of S&T, Taiwan*AU Optronics, Taiwan

This paper computes disparity distributions of 2D-to-3D converted
images and proposes a checklist based on depth cues for subjective
assessment of stereo-displays. Experiments were conducted toinvestigate visual comforts on both 23-in. and 65-in. displays. There
were different visual experiences on both displays even if theparameter settings were ﬁxed.
3D10 - 4L
16:10

Color Three-Dimensional Image Generation Using
Viewing-Zone Scanning-Type Super Multi-View
Display
T. Ueda, Y. Toda, Y. Takaki
Tokyo Univ. of A&T, Japan

A viewing-zone scanning-type super multi-view display can generate
numerous viewing points. This study introduced the time-multiplexing
technique to produce three-dimensional color images. The prototype
display generates 55 viewing points at an interval of 3.3 mm for each
R, G, and B color with a refresh rate of 48.5 Hz.
3D10 - 2

Withdrawn

3D10 - 3

Withdrawn

Author Interviews and Demonstrations
17:30 – 18:30
Supporting Organizations:
3-D Image Technology Research Group, ITE
Holographic Display Artists and Engineers Club154

TuesdayDecember 4Workshop on
Applied Vision and Human Factors
Tuesday, December 4
14:20 - 15:50

Room C-1

Chair:
Co-Chair:N. Ohta, Rochester Inst. of Tech., USA
T. Matsumoto, Sony, Japan

VHF1 - 1:
14:20

Invited Assessing Colour Difference for Images

VHF

VHF1: Color (1)M. R. Luo
Univ. of Leeds, UKThis paper provides an overview of the development of colour
difference formulae and uniform colour spaces. It will then extended forevaluating images. The work under CIE TC8-02 Colour Difference
Evaluation in Images will be introduced together with more recent
works will be introduced.
VHF1 - 2
14:50

Image Enhancement Based on Perceptual
Correlates of Lightness/Chroma in CIECAM02 ColorSpace
M.-C. Lo, J.-L. Lin, W.-B. Li
Shih Hsin Univ., Taiwan

In this paper, four types of image enhancement algorithms (IEAs) weredeveloped, and used for improving display image quality factors, suchas details and dynamic range or spatio- frequency-temporal image
artifacts. The IEAs derived consist of Fourier transform (including both
highpass and lowpass), unsharp masking (USM), bilateral ﬁltering, andGaussian pyramid.
VHF1 - 3
15:10

Possible Color Reproduction Methods to Obtain
High Luminance and Wide Gamut on Reflective
Displays
M. Kanazawa
NHK-ES, JapanThe relationship of the luminance and the color gamut for reﬂective
type displays is investigated. It is shown that methods based on thehuman visual system other than the current RGB sub-pixel can havebetter luminance and color gamut.

155

TuesdayDecember 4

VHF1 - 4
15:30

An Analytical Strategy for Colour Vision Deficiency
Using a Digital Colour Vision Test Plate
Y.-C. Tsai, H.-S. Chen, M. R. Luo*Nat. Taiwan Univ. of S&T, Taiwan*Univ. of Leeds, UK

An analytical strategy for colour vision deﬁciency to examine thedegrees of deuteranomalous vision based on just-noticeable chromaticdifference was developed. The developed computer software named
Digital Colour Vision Test Plate (DCVTP) was used. The accuracy of
DCVTP will be compared with Farnsworth-Munsell Dichotomous D-15
and Heidelberger Multi Colour Anomaloscope.
----- Break ----16:10 - 17:30

Room C-1

DES2/VHF2: Color (2)Chair:
Co-Chair:

M. R. Luo, Univ. of Leeds, UK
T. Fujine, Sharp, Japan

DES2/
VHF2 - 1:
16:10

Invited Measuring Light and Color: Defining Color
Rendering Property of Artificial Illuminants
N. OhtaRochester Inst. of Tech., USA

The basis of the CIE standard colorimetric system was established as
early as in 1931. After that, varieties of applications have beendeveloped. Among them, I will today explain the method widely appliedin the industrial ﬁeld for evaluating the color rendering of light sources.
DES2/
VHF2 - 2:
16:40

Invited Development of Laser Backlighting LCD
Television
E. Niikura, R. Murase, S. Kagawa, N. Nakano,
A. Nagase, H. Sakamoto, T. Sasagawa, K. Minami,
H. Sugiura, K. Shimizu, M. Hanai
Mitsubishi Elec., Japan

We have developed a laser backlighting LCD television using a LD for
one of the light sources. The backlighting system of this TV uses two
kinds of light source. One is a red LD and the other is a cyan LED. We
realized a wide color gamut from this TV.

156

Tue./Wed.
DES2/
VHF2 - 3
17:10

December 4/5
The Effect of Lightness Component on Preferred
Skin Color Reproduction of a Display
S.-H. Chen, H.-S. Chen, N. Ohta*, R. Luo**, N.-C. Hu
Nat. Taiwan Univ. of S&T, Taiwan*Rochester Inst. of Tech., USA**Univ. of Leeds, UK

Author Interviews and Demonstrations
17:50 – 18:50

Wednesday, December 5
9:00 - 10:20

Room B-1

3D3/VHF3: 3D Crosstalk Evaluation
Chair:
Co-Chair:J.-H. Park, Chungbuk Nat. Univ., Korea
T. Kurita, NHK, Japan

3D3/
VHF3 - 1
9:00

Perceptual Correspondence of Gray-to-Gray
Crosstalk Equations for Stereoscopic Displays
Z. Xia, X. Li, Y. Cui, L. Chen, K. Teunissen*Southeast Univ., China*TP Vision, the Netherlands

Although several crosstalk deﬁnitions have been proposed to indicate
the level of crosstalk in stereoscopic displays, they do not necessarily
correlate with perceived crosstalk. Based on perception experiments,
we studied the correlation between ten objective crosstalk equations
and perceived crosstalk for four glasses-based stereoscopic displays
while using several gray-to-gray transitions.
3D3/
VHF3 - 2
9:20

Visibility Thresholds for Crosstalk on Stereoscopic
Displays
Y.-Y. Ko, Y.-L. Chen, Y.-J. Chang, C.-W. Chen, R.-L. Rong
AU Optronics, Taiwan

Crosstalk is one of the critical factors determining the viewing quality
and comfort in stereoscopic displays. This study tried to ﬁnd out therelationship between crosstalk and related factors, like parallax angle
and spatial frequency, and proposed psychophysics and ergonomic
method to obtain the crosstalk threshold trend of human eyes.

157

VHF

It is important to understand preferred skin color reproduction in display
industry. The aim of this study is to examine the relationship between
the brightness of skin color and perceived preference. The experiments
are conducted to determine the preferred skin color ranges onchromatic components and lightness component on display.

Wednesday

December 5
Camera-Based Cross-Talk and Uniformity
Measurement of Multi-View Autostereoscopic 3D
Display

3D3/
VHF3 - 3
9:40

C.-F. Hung, F.-C. Tsai, C.-P. Ho
AU Optronics, Taiwan
This paper presents a camera-based approach with a uniformity
measurement function to quantify the uniformity and the crosstalkcharacteristic of a multi-view autostereoscopic 3D display. The results
show that the proposed method can efﬁciently and accurately measureboth the global and local uniformity characteristic of the 3D display.
A Novel Method to Evaluate the 3D Crosstalk of
Stereoscopic 3D Display

3D3/
VHF3 - 4
10:00

H.-T. Lin, S.-C. Lin, C.-C. Chiu
Chunghwa Picture Tubes, Taiwan

In this paper, we proposed a method to evaluate the quality of 3D
display by using gray-to-gray crosstalk, through the formula convert thebrightness of crosstalk into human perceptual response, and we also
proposed some check patterns to make observer to evaluate the grayto-gray 3D crosstalk easily and efﬁciently.
----- Break ----10:50 - 12:05

Room B-1

3D4/VHF4: 3D Image Quality (1)Chair:
Co-Chair:T. Horikoshi, NTT DoCoMo, Japan
A. Yoshida, Sharp, Japan

3D4/
VHF4 - 1
10:50

Quality Control of Active Glass 3D Displays Using
Temporal Measurements
P. Boher, T. Leroux, T. Bignon, P. Blanc*
ELDIM, France*Labs. d’ Essais de la FNAC, France

Quality control of active glasses 3D TVs is performed using highaccuracy and high temporal resolution luminance measurements
versus time. The two main parasitic effects on such displays, crosstalkand ﬂicker are derived for different couples of gray levels applied.
Quality criteria for ghost effect and ﬂicker visibility are derived.
3D4/
VHF4 - 2
11:10

New Crosstalk Index of Shutter Glasses 3D Display
C. W. Chen, Q. Liao, C. C. Hsiao
Shenzen China Star Optoelect. Tech., China

A concept of universal crosstalk index for stereoscopic 3D display was
proposed. Conventional crosstalk of shutter glasses 3D could betransferred to the new crosstalk index that could be comparable withthe crosstalk index of patterned retarder 3D. The new crosstalk index
was also investigated by human perceptive experiment.
158

Wednesday

December 5
The Use of a Small-Sized Autostereoscopic Display:
Context Influence on User Experiences

3D4/
VHF4 - 3
11:30

M. Pölönen, M. Salmimaa
Nokia, Finland

High Resolution Multi-View 3D Display Based on
Active Optical Device

3D4/
VHF4 - 4L
11:50

K. Choi, Y. Choi, Y. Kim, Y. Kwon, J. Bae
Samsung Elect., Korea

This paper review system architectures for displaying a 3-dimensional
image, based on a time multiplexing scheme. More particularly, anapparatus for displaying a 3D image, capable of providing a natural 3D
display with a simple structure using an active optical device (or active
optical element) capable of changing a path of light.
----- Lunch ----15:50 - 17:10

Room B-1

VHF5/3D5: 3D Image Quality (2)Chair:
Co-Chair:N. Hiruma, NHK, JapanK. Yamamoto, NICT, Japan

VHF5/
3D5 - 1
15:50

Stereo-Resolution Analysis Based on Reading
Performance
Y.-Y. Lai, S.-F. Y. Mao
ITRI, Taiwan

The reading performance is used to analyze the stereo-resolution in
the stereoscopic display. In this paper, static and dynamic experimental
designs were proposed to detect the stereo-resolution of stereoscopic
display. From the results, reading performance could be a method toassess the property of stereo-resolution.
VHF5/
3D5 - 2
16:10

The Quantization of 3D Resolution Based on Human
Perception
Y.-L. Chen, C.-W. Chen, R.-L. Dong
AU Optronics, Taiwan

This is a novel study tried to quantify 3D resolution based on humanperceptual judgment. Take resolution-related font size changes asstimuli, we found the reduced resolution in 3D would deteriorate
perceptual clarity. The perceptual 3D resolution and better resolution
design of 3D display were proposed.

159

VHF

92 participants viewed stereoscopic content on a small-sizedautostereoscopic display in four different environments. The results
indicate that the context of use did not inﬂuence user experiences,
particularly with regard to eyestrain or motion-induced sickness levels,
but context of use had some inﬂuence on image quality.

Wed./Thu.

December 5/6
3D Depth Detection in Multi-View Displays

VHF5/
3D5 - 3
16:30

S.-F. Yang-Mao, Y.-T. Lin, T.-M. Wang, C.-H. Ho,
H.-W. Chen, C.-S. Wu
ITRI, Taiwan

We propose a new design of testing for stereoscopic performance
estimation between multi-view displays. Testing results show thatparallel multi-view display has lower depth JND than convergent multiview display; in other words, more depth details can be perceived in
multi-view display with parallel optical beam on conﬁguration of 36-rays.
Accommodation Response of Super Multi-View
Display Using Directional Light in Monocular
Condition

VHF5/
3D5 - 4
16:50

J.-H. Jung, J. Kim, S.-G. Park, S. Y. Choi*, D. Nam*,
B. LeeSeoul Nat. Univ., Korea*Samsung Advanced Inst. of Tech., Korea

Accommodation responses in a monocular condition are measured in asuper multi-view display composed of telecentric lens, spatial light
modulator and relay optics. The ideal case of super multi-view display
is implemented and its induction of accommodation response inmonocular eye is veriﬁed by the accommodation measurement using
autorefractometer.
Author Interviews and Demonstrations
17:30 – 18:30

Thursday, December 6
9:00 - 10:30

Room B-1

VHF6: Wide-Angle and Head-Up Display Human Factors
Special Topics of Interest on Augmented Reality
Chair:
Co-Chair:T. Kurita, NHK, Japan
A. Yoshida, Sharp, Japan

VHF6 - 1:
9:00

Invited Education for Disaster Prevention Using
Ultra-Realistic Dome Images −Learning ThroughImages of the Great East Japan Earthquake−
M. Okyudo
Wakayama Univ., JapanOn 11 March 2011, our country suffered an earthquake and a tsunami
of unprecedented size. Streets and towns throughout a wide region
were destroyed. We recorded these disaster areas in ultra-realistic
dome images, presented them in a digital planetarium, and began to
use them as disaster prevention education.

160

Thursday
VHF6 - 2
9:30

December 6
Development of Perceived Depth Position Control
Method with a Preceding Obstacle for Monocular
Head-Up Display Images
A. Hotta, T. Sasaki, A. Moriya, H. Okumura
Toshiba, Japan

VHF6 - 3
9:50

Effect of a Head-Up Display on Reaction Time in a
Skiing Simulation
M. Lolic, R. Hoskinson, É. Naugle, H. Abdollahi
Recon Instrs., Canada

A computer simulation was created to monitor the reaction time ofparticipants using a heads up display (HUD) while watching a ﬁrstperson ski video. It was found on average that the reaction timeincreased by 0.19 seconds when users were asked to pay attention to
notiﬁcations on a HUD.
VHF6 - 4
10:10

A LC Lens Array Based Projection System for Near
Eye Displays
S. Valyukh, J. De Smet*,**, O. Slobodyanyuk***,H. De Smet*,**Linköping Univ., Sweden*imec, Belgium**Ghent Univ., Belgium***Taras Shevchenko Nat. Univ. of Kyiv, Ukraine

A projection optical system for hypothetic near eye displays that can bebuilt into a contact lens or glasses is considered. The systemparameters are evaluated. Aspects of practical usage of the displays
and possible embodiments of the optical system are discussed.
----- Break ----14:00 - 17:00

Event Hall

Poster VHFp: Applied Vision and Human Factors
VHFp - 1

Detection of Analog Meter Indicator Using
Combinational Hough Transform Based on Featuresof Indicator
J. Mizutani, F. Saitoh
Gifu Univ., Japan

We propose a method to detect indicator of analog meter in an
objective image using the combinational Hough transform and featuresof indicator. The experimental results show that the indicators ofvarious analog meters are detected by the proposed method.
161

VHF

We developed novel depth perception control methods for the
monocular HUD virtual image when there is a preceding obstacle. The
results show that the perceived depth position of the HUD images canbe controlled from 30 m to 120 m within an error of 30% which is further
than the obstacle position.

Thursday
VHFp - 2

December 6
Fast Detection Method for Perceptive Curves
T. Takagi, F. Saitoh
Gifu Univ., Japan

In the previous conference, we have proposed the high-precision
method to detect perceptive continuous curves from a binary image.
This time we propose the fast detection method without additionalparameters and accuracy deterioration. Experimental results show that
this method would be 50 times faster than pre-reported method.
VHFp - 3

Reliable Image Template Matching Using Adaptive
Block Separation
A. Hirosawa, F. Saitoh
Gifu Univ., Japan

This paper proposes a more reliable method for template matching thatbuilds the algorithm that automatically divides blocks into conventional
method. In each block, to calculate the degree of similarity amongcontiguous block. Their blocks are connected depending on the results.
Template matching is performed by using foregoing blocks.
VHFp - 4

High-Speed Image Matching Using Templates with
Detection History Learning
S. Nakamura, F. Saitoh
Gifu Univ., Japan

Template matching has the method of improving performance bymachine learning. However, those methods require time for making
data learn. Moreover, preparation of the data for machine learning is
not easy. Therefore, the method of optimizing a template image bylearning simultaneously with detection is proposed.
VHFp - 5

Correspondence between Subjective Assessment
and Objective Computational Metric for Viewing
Angle
Y.-Y. Lin, C.-H. Wen, P.-C. Huang*, T.-W. Hsu*,
K.-C. Chang*Nat. Taiwan Univ. of S&T, Taiwan*AU Optronics, Taiwan

A new metric to identify the image quality of viewing angles is
proposed to correspond with human subjective evaluations.
Experiments were conducted to verify the feasibility of the metric using
three displays. The advantages include the capability of dealing withcolor image quality of viewing angles through current metrology.

162

Thursday
VHFp - 6

December 6
Three-Layered Secure Display Based on
Polarization Modulation
K. Uchida, S. Suyama, H. Yamamoto
Univ. of Tokushima, Japan

VHFp - 7

Analysis of Drop Mura in Fringe Field Switching
Liquid Crystal Display
W. Zhang, S. H. Song, X. Chen, T. Y. Min
BOE Optoelect. Tech., China

Drop Mura, one of the most frequent defects in themanufacture ofFringe-Field Switching LCD, was thoroughly analyzed in this paper. Itʼsbelieved that Drop Mura is caused by too weak anchoring to LC
molecules. Provably, three feasible approaches to improve it were
supplied.
VHFp - 8

Plural Image Areas Searching by Immune System
Type Genetic Algorithm with Two Memory
Mechanisms
Y. Shimohira, F. Saitoh
Gifu Univ., Japan

This paper proposed a method that extracts plural target image areas
with free locations, inclination and scale that are similar to template
image by immune system type genetic algorithm with two memory
mechanisms. The experimental results show the proposed method cansearch more plural local solutions than conventional methods.
VHFp - 9Curved Mirror Detection Using Edge Pre-Processing
Based on Curvature
T. Kawamoto, F. Saitoh
Gifu Univ., Japan

We propose a method to detect only the curved mirror using Least
Square Method and Hough Transform from the image of urban area.
The experimental results also show the effectiveness of the preprocessing proposed in this paper.
VHFp - 10

Withdrawn

163

VHF

We have realized a new secure display by three liquid-crystal display(LCD) panels. A special code set for optical encryption has been
constructed in order to suppress color change caused by higher-orderbirefringence. Use of three-layered LCD panels strictly limits theviewing position and increases complexity of keys.

Thu./Fri.

December 6/7

VHFp - 11

The Comfort Zone and Fusion Limit of a Foreground
Object with Its Background on a Large Format 3D
Display
P.-L. Sun, T.-H. Tseng, Y.-L. Chen*, C.-W. Chen*,
R.-L. Dong*
Nat. Taiwan Univ. of S&T, Taiwan*AU Optronics, Taiwan

Unlike previous studies which ignored the background of an image, thecomfort zone and fusion limit of a foreground object with its backgroundwere investigated. The results show the fusion limit is nearly a constantfor different vergence distance. Besides, blur the background slightly
would extend the comfort zone.
VHFp - 12L

Gamut Extension Algorithm in Laser Display
B. Na, W. Wang, W. Lu*
East China Normal Univ., China*Chinese Ac. of Scis., China

The paper proposed a new gamut mapping system, the system isapplied based on the image contents. The images reproduced by the
new system are more ﬂaming and more beautiful than usual without
the problem of making the viewers fell fatigue.
Author Interviews and Demonstrations
17:30 – 18:30

Friday, December 7
10:50 - 12:35

Room C-2

VHF7: Human Factors and Visual Cognition
Chair:
Co-Chair:S. Clippingdale, NHK, Japan
K. Sakamoto, Panasonic, Japan

VHF7 - 1:
10:50

Invited JAMA Guidelines for In-Vehicle Display
Systems
Y. Nakamura
Honda R&D, Japan

JAMA executed the road tests to analyze driver's workload of various
operations to the navigation systems. As a result, the JAMA guidelines
regulated the worldʼs ﬁrst numerical criterion for display operations
while driving. The paper describes the grounds of the criterion.

164

Friday

December 7

VHF7 - 2
11:20

Study on User Interface for Flexible Displays
S.-P. Wang, M.-Y. Lu, S.-H. Wu, C.-C. Liang
ITRI, Taiwan

VHF7 - 3
11:40

Visual Comfort for Older People Reading on a Tablet
Computer under Dark Conditions
H.-P. Huang, Y.-H. Bai, L.-C. Ou
Nat. Taiwan Univ. of S&T, Taiwan

We studied visual comfort of 20 young and 20 older observers viewing
text-background combinations presented on an iPad 2. As a result,older observers tended to prefer higher lightness difference for textbackground combinations, while visual comfort for young observers
tended not to increase for lightness difference higher than 80.
VHF7 - 4
12:00

The Influence of Recognition of Illumination upon
Depth Perception
K. Oba, K. Nagai, H. Kaji, T. Ishikawa, M. Ayama
Univ. of Utsunomiya, Japan

We investigated the quantitative relation between the shadow on an
objectʼs surface and the perceptual evaluation of its depth using
primary and secondary objects. The luminance gradient causing
protrusive perception of the secondary object depended on whether it
was perceived to be in front of or behind the primary object.
VHF7 - 5L
12:20

Luminance-Contrast Smoothness as a Depth Cue
Y. Tsushima, K. Komine, N. Hiruma
NHK, Japan

It is known that luminance-contrast change is one of depth cues,
however, little is known about the relationship between depth
perception and display resolution. Here we examine how luminancecontrast smoothness correlates with depth perception. The results
show that contrast smoothness can be used as one of depth cues.
----- Lunch ----14:00 - 15:35

Room C-2

VHF8: Image Format and Ergonomic Design of HD/UHDTV
Chair:
Co-Chair:Y. Shimodaira, Shizuoka Univ., JapanK. Masaoka, NHK, Japan

165

VHF

In order to ﬁnd out the most intuitive user interface methods on ﬂexible
displays, series of human factor experiments were executed tounderstand the natural operating behaviors of users. Gestures andfalse signals judgment algorithms were found out by keeping track ofusersʼ gestures.

Friday
VHF8 - 1:
14:00

December 7
Invited SUPER Hi-VISION Image Format and Its
Standardization
M. Sugawara, K. Masaoka, M. Emoto, Y. Nishida,
Y. Shishikui
NHK, Japan

A series of studies on the parameter values for SUPER Hi-VISION
image format were carried out from the viewpoint of human factors. A
set of selected parameter values was proposed to ITU-R.
Recommendation ITU-R BT.2020 was established in August 2012 after
four years of standardization activities.
VHF8 - 2:
14:30

Invited Summary and Impact of the Ergonomic
Design Guidelines for Flat Panel Display Televisions
Issued by the Japan Ergonomics Society
Y. Hisatake, S. Kubota*
Japan Display Central, Japan*Seikei Univ., Japan

This paper summarizes the Ergonomic Design Guidelines for Flat
Panel Display Televisions issued by the Japan Ergonomics Society,reviewing the required luminance contrast ratio. We concluded that thecontrast ratio of the display should be 6700 or more under actual
normal television-viewing conditions.
VHF8 - 3
15:00

Size Effect Revisited : Subjective Image Quality of
HDTV Images as a Function of Visual Angle andDisplay Size
T. Kanda, T. Fujine, M. Sugino
Sharp, Japan

In this research, we investigated size effect for image quality on
reproducing HDTV images. We conﬁrmed that sense of presence
increased along with larger screen size, and realness increased alongwith higher angular resolution but had no size effect. Finally, we
discussed about display for the next generation.
VHF8 - 4L
15:20

Resolution Limits for Smartphone Displays
L. Spencer, M. Jakobsen, S. Shah, G. Cairns,
H. Washio*, H. Nishishiba*
Sharp Labs. of Europe, UK*Sharp, Japan

This study determines an upper discernible limit for display resolution.
A range of resolutions varying from 254-1016 PPI were evaluated by
49 subjects at 300 mm. Results of the study conclusively show users
can discriminate between 339 and 508 PPI and in many cases
between 508 and 1016 PPI.
----- Break -----

166

Friday

December 7

15:50 - 17:20

Room C-2

VHF9: Display Measurement
Chair:
Co-Chair:Y. Hisatake, Japan Display Central, Japan
J. Bergquist, Nokia Japan, Japan

VHF9 - 1
15:50

Image Quality Evaluation for LCD by Employing
Local Dimming Backlight

VHF

M.-H. Yang, S.-Y. Pan, K.-C. Chang, C.-Y. Lee
AU Optronics, Taiwan
We proposed new methods for evaluation of consistency of contrast,
luminance, and uniformity of LCD with local dimming backlight byimplementing checkerboards, box patterns and complex pictures. And
evaluation of power consumption reduction ability of LCD with local
dimming backlight, speciﬁed patterns of ISO and IEC standards areused.
VHF9 - 2

Withdrawn

VHF9 - 4L
16:10

A Quantitative Mura Evaluation Method that
Depends on Viewing Distance
K. Nagamine, S. Tomioka
Sony, JapanWe developed a quantitative mura evaluation method that depends onviewing distance. In the present paper, we report the results of ananalysis of the dependence of the mura edge appearance on viewing
distance. We propose a new deﬁnition of the threshold for edge
detection that considers human vision.
VHF9 - 3
16:30

Improved Picture Quality on Multi-Domain Polymer
Sustained Alignment LCD Technology
K.-C. Tien, C.-H. Liao, M.-H. Wu, S.-M. Gong,
J.-Y. Chung, W.-H. Hsu, J.-J. Su
AU Optronics, Taiwan

Design parameters, area ratio and voltage ratio, of multi-domain
polymer sustained alignment (PSA) LCDs and their effects for picture
quality are studied. By the optimized individual RGB sub-pixel design,
we improve color-washout without suffering yellowish color-shift effect.

167

Friday
VHF9 - 5L
16:50

December 7
Perceived and Acceptable Limit Level of Color
Gamut Reduction
J.-U. Kwon, S.-J. Bang, M.-C. Byun, H.-I. Baek, M. Lim,
H.-H. Shin
LG Display, Korea

Perceived limit level (PLL) and acceptable limit level (ALL) weresuggested in case the color gamut is reduced from 100% to 55%.
When reference images were within 100% or 83% of BT.709 gamut,
PLL was 88~89% and 74%, respectively. ALL was 69% and 60~61%,
respectively.
VHF9 - 6L
17:05

Saliency-Based Color Accessibility: Theory into
Practice
S. Tajima, K. Komine
NHK, Japan

We propose a novel methodology to analyze the universality of images,
taking into account the diversity of color perception. It quantiﬁes andvisualizes expected information loss according to the notion of visualsaliency. Psychophysical experiments indicated relationships between
the modelʼs predictions and subjective visual clarity.
Author Interviews and Demonstrations
17:30 – 18:30
Supporting Organizations:
Information Display Research Committee, ITE
Technical Committee on Electronic Information Displays, Electronics
Society, IEICEIDW Best Paper AwardIDW Outstanding
Poster Paper Award
These awards will go to the most outstanding papers
selected from those presented at IDW/AD ’12.
The 2012 award winners will be announced on the
IDW website: http://www.idw.ne.jp/award.html
168

Thursday

December 6

Workshop on Projection and Large-Area
Displays and Their Components
Thursday, December 6
9:00 - 10:35

Room B-2

PRJ1: High Reality
Y. W. Li, Himax Display, Taiwan
T. Suzuki, JVC KENWOOD, Japan

PRJ1 - 1:
9:00

Invited New Markets for Projection System andOngoing B reakthrough Technology

PRJ

Chair:
Co-Chair:J. Kimura, M. TakasoTechno Syss. Res., Japan
Projection displayʼs main applications are presentation usage at
education scenes, cinema, large venue, embedded, small and pocket
projectors. Head Up Displays (HUDs), Head Mounted Displays (HMDs)
have started to take off with the latest projection technology. Current
challenges and the market expectation for solid state light source are
noted.
PRJ1 - 2:
9:25

Invited Realistic Image Display Based on HighFidelity and Wide-Gamut Color Reproduction
M. Yamaguchi
Tokyo Inst. of Tech., Japan

Technologies for realistic image display based on high-ﬁdelity andwide-gamut color reproduction are presented. The system can be
implemented with multiprimary color displays or laser projection
displays, along with spectrum-based image acquisition and encoding.
For improved material perception, techniques for gloss and highluminance texture reproduction are also investigated.
PRJ1 - 3:
9:50

Invited Autostereoscopic AR Display Based on
Overlaid Multi-Projection 3D Display
T. Koike, K. Utsugi, M. Oikawa, M. Yamasaki
Hitachi, JapanWe developed 3D aerial image by using a 3D display and a planeglass. The 3D display consists of 24 projectors and is based on aprinciple of overlaid multi-projection integral imaging. This technology
realizes 3D augmented reality in real space by 3D aerial image
superimposed on the real object.

169

Thursday

December 6

PRJ1 - 4
10:15

Ultra-High Native Contrast 4K LCOS Projector Using
e-Shift Technology
Y. Kojima, T. Aizaki, K. Maeno, T. Furukawa, T. Saiki,
M. Furuya, M. SatoJVC KENWOOD, Japan

A 4K projector for consumers has been developed. By combination of
LCOS device and e-Shift technology that were developed for 8000
scan lines display, 4K projector became the home theater projector.
Furthermore, by the evolution of the Wire-grid optical engine, it got
ultra-high native contrast 120,000:1.
----- Break ----10:50 - 11:20

Room B-2

Short Presentation PRJp: Projection and Optics
Chair:
Co-Chair:H. Kanayama, Panasonic, Japan
H. Sugiura, Mitsubishi, JapanAll authors of poster papers for the PRJp session will give brieforal presentations of 3 minutes in advance.
----- Lunch ----14:00 - 17:00

Event Hall

Poster PRJp: Projection and Optics
PRJp - 1

Compact Liquid Crystal Circular Polarization Switch
for 3D Laser Pico-Projectors
S. Kato, T. Takeishi, T. Nozaki, M. Ide
Citizen Holdings, Japan

Crosstalk is one of the most important attributes of image quality ofpolarization switching 3D pico-projectors and the chromatic dispersion
of a polarization switch causes crosstalk. We propose a novel compact
polarization switch using an FLC in-plane switch and an NLC retarderwith a polymer retardation ﬁlm.
PRJp - 2

Integrated Waveguide-Type Red-Green-Blue Beam
Combiners for Compact Projection-Type Displays
Y. Kato, Y. Kakinoki, R. Morimoto, T. Katsuyama
Univ. of Fukui, Japan

We studied the red-green-blue combiners with optical waveguides toobtain compact projection-type displays. Three combiners based on
whispering-gallery mode, multi-mode interference and directionalcoupler were designed. In these combiners, we concluded that the
combiner based on the directional-coupler is the best candidate, giving
96% efﬁciency and the size of 0.06 6 mm2.
PRJp - 3
170

Withdrawn

Thursday
PRJp - 4

December 6
Liquid Cooled Recycling LED Array for Digital
Projectors
K. Li
Wavien, USA

This paper presents an array of RLT-LEDs mounted in a heat sink withrefrigerated liquid cooling. With the white LEDs operating at 280 W, an
output of over 700 lumens is expected and with over 1,000 lumens
after further optimization, using a DLP projector with a 0.65-in. WXGA
imager.
PRJp - 5

Zoomable Color Holographic Projection Method
without a Zoom Lens

PRJ

T. Shimobaba, T. Kakue, N. Masuda, T. Ito
Chiba Univ., Japan
Holographic projection has the merits of being aberration-free,producing high contrast images. We have already proposed azoomable monochrome holographic projection without using a zoom
lens. In this paper, we advance the zoomable monochrome holographic
projection to color one.
PRJp - 6

Optical Lens Design for a Virtual Image Projector ina Helmet
H. T. Lin, W.-C. Su, P.-K. Chang, Y.-W. WangNat. Changhua Univ. of Education, Taiwan

A projection lens design for a virtual image projector in a helmet ispresented. The designed projection lens system shows that opticalmodulation transfer function (MTF) is 0.55 at the spatial frequency of
40 lp/mm and ﬁeld of view (FOV) is 8 .
PRJp - 7

Optics-Based Dielectrophoretic Technology for
Cells Manipulating
H.-H. Chen, H.-H. Lo, C.-C. Lin, J.-C. Chen
ITRI, Taiwan

We propose a special designed lens to project the entire image to theoptically-induced dielectrophoretic (ODEP) chip to achieve high light
efﬁciency and large manipulating area. The ODEP chip combines two
ITO glasses and spacer, and one ITO glass was coated with aphotoconductive thin ﬁlm.
PRJp - 8L

A Study of Optical Design of Laser Projector withHigh Contrast
C.-H. Chu, Y.-C. Fang, W.-T. Li
Nat. Kaohsiung First Univ. of S&T, Taiwan

The research focuses on prospect module of laser projector with highcontrast and efﬁciency. This is a completely new design which takes
advantage of less heat interference and system whose performanceand contrast of new developed projector have been further improved.
171

Thu./Fri.
PRJp - 9L

December 6/7
Increase Brightness of Pico-Projectors with RGGB
LEDs Using DPR Recycling Collars
K. Li
Wavien, USA

A new LED recycling collar using Dual Parabolic Reﬂector (DPR) is
being developed to increase the brightness of multi-colored LED
package with RGGB LEDs. The output from each LED is recycled backinto itself on the same location, thus increases the brightness of each
LED independently.
PRJp - 10L

Analysis of Light Emitting Diode Reflector by Factor
Analysis
C.-J. Ou, C.-H. Lin, S.-L. Young
Hsiuping Univ. of S&T, Taiwan

This report discusses the important features of the three geometricfactors and the two performance metric response (uniformity andcollected energy) for the designing of the LED reﬂector. Shape factors
for the LED reﬂectors are proposed, and the methodology for designing
the optimal shape is discussed.
PRJp - 11L

Application of LED for Generalized Cell Illuminating
Experiment System
C.-J. Ou, S. R. Yeh*, B.-W. Lee, C.-J. Huang, C.-H. Lin
Hsiuping Univ. of S&T, Taiwan*Nat. Tsing Hua Univ., Taiwan

Novel tissue engineering required the using of the light source produce
a small light spot close to the cells. In order to investigate the LED
factors (wavelength, polarization and spatial intensity distribution), we
demonstrate a LED based portable cell illuminating system, and report
the feasibilities of the present design.
Author Interviews and Demonstrations
17:30 – 18:30

Friday, December 7
9:00 - 10:25

Room B-1

PRJ2: Vehicle Displays
Chair:
Co-Chair:

172

D. Cuypers, imec, Belgium
K. Ohara, Texas Instrs., Japan

Friday
PRJ2 - 1:
9:00

December 7
Invited Development of a Rear Projection Free-Form
Display
S. Nakahara, M. Kuwata, T. Kumagai, W. Yamazaki,
T. Yagisawa, T. Matsubara, K. Kojima, A. Michimori,K. Minami, H. Sugiura
Mitsubishi Elec., Japan

On-board displays need a design which matches the interior design ofthe car, in addition to providing the driver with information. We havedeveloped a free-form rear projection display. The rear projection
display shows image information on three-dimensional curved surfaces.
We propose a free-form cockpit using the rear projection display.
Development of Full-Color Laser Head-Up Display

PRJ

PRJ2 - 2
9:25

Y. Tanahashi, O. Kasono, T. Yanagisawa, T. Nomoto,I. Kikuchi, T. Ezuka, K. Nakamura, H. Takahashi,
Y. Imasaka, Y. Tsuchida, T. Shimizu
Pioneer, Japan

A compact head-up display (HUD) system, which can be attached on acarʼs ceiling, is developed. Wider ﬁeld of view (FOV, 17.1 x 5.7 ) is
achieved in combination with a laser projector, a micro-lens array
screen and a concaved half mirror. Optical see-through AR navigation
can be realized with it.
PRJ2 - 3
9:45

Combiner for Head-up Displays Using Partial
Transparent Fresnel Reflecter
K. Horiuchi, S. Shimakawa, M. Inomoto, N. Okada,
T. Sasaki, H. Okumura
Toshiba, Japan

A combiner for wide-view head-up displays using Fresnel reﬂector thatacts both as a concave mirror for reﬂected light and a ﬂat plate fortransmitted light has been developed. Ghost image is eliminated bydecentered Fresnel pattern with variable pitch sandwiched by thematerials with the same refraction index.
PRJ2 - 4
10:05

Projection Technology for Future Airplane Cockpits
D. Cuypers*, H. D. Smet**,*, A. Monté*, X. Hugel***,G. Dubroca****imec, Belgium**Ghent Univ., Belgium***Optinvent, France

A large single interactive display designed for the cockpits of future
airplanes, as it was developed during the European Project ODICIS ispresented. It is based on an array of several short throw wide angle
projectors resulting in a seamlessly tiled display. The project results are
discussed in this contribution.
----- Break -----

173

Friday

December 7

10:50 - 12:15

Room B-1

PRJ3: Components
Chair:
Co-Chair:P. Rudy, Soraa, USA
S. Shikama, Setsunan Univ., Japan

PRJ3 - 1:
10:50

Invited New Progress of LCOS Using a Fringe-Field
Color Filter
Y. W. Li, K.-H. Fanchiang, H.-C. Kuo, H.-C. Tsai
Himax Display, Taiwan

The color performance of LCOS can be improved by Fringe Field Color
Filter technology. Besides the color performance improvement, it also
allows pixel size shrinkage. In this paper, we demonstrate that even
40% pixel size is reduced; the color performance still can be kept at thesame level.
PRJ3 - 2
11:15

Speckle Contrast as Low as LED for High
Luminance Phosphor-Converted Lamp Excited by
InGaN/GaN Blue Laser Diodes
J. Kinoshita, Y. Ikeda, Y. Takeda, Y. Kawasaki, M. Ueno,
Y. Matsuba, A. Heike
Toshiba Lighting & Tech., Japan

A white lamp with a spectrum consisting of blue output from InGaN/
GaN laser diodes and yellow phosphor emission has achieved aluminance as high as 140 Mcd/m2. Despite using the lasers, this lamp
is suitable for various lighting applications because of its completely
speckle-free PWM dimming performance.
PRJ3 - 3
11:35

Speckle Reduction Within a Single One
Microsecond Laser Pulse
F. Shevlin
Dyoptyka, Ireland

Pulsed operation of lasers has a variety of advantages in projection
displays. DYOPTYKA's innovative solution for the reduction of speckle
noise, using a phase randomizing deformable mirror, is shown toachieve good performance both within a single one microsecond pulse
duration and through sequences of such short pulses.
PRJ3 - 4
11:55

Single and Dual Lamp System Using DPR for Digital
Cinema Projectors
K. Li
Wavien, USA

A multi-kilowatt single and dual xenon lamp based illumination systems
for digital projectors are being developed using the Dual Paraboloid
Reﬂectors (DPR) with polarization recycling system for LCOS and
3LCD imagers, and without recycling for DLP imagers. The DPR
system allows higher efﬁciency operations compared to standard
elliptical reﬂector system.
----- Lunch ----174

Friday

December 7

14:00 - 15:35

Room B-2

PRJ4: Solid State Lighting
Special Topics of Interest on Lighting Technologies
Chair:
Co-Chair:F. Shevlin, Dyoptyka, Ireland
M. Sakai, Ushio, Japan

PRJ4 - 1:
14:00

Invited Recent Progress in Green and Blue InGaN
Laser Diodes for Projection Display Applications
J. W. Raring, M. C. Schmidt, C. Poblenz, H. Huang,
C. Bai, P. Rudy, J. S. Speck, S. P. DenBaars,
S. Nakamura
Soraa, USA

PRJ4 - 2:
14:25

Invited Green-to-Yellow Spectral Region CW
Operation of BeZnCdSe Quantum-Well Laser Diodes
S. Tanaka, S. Fujisaki, J. Kasai, S. Tsuji, R. Akimoto*,
T. Hasama*, H. Ishikawa*
Hitachi, Japan*AIST, Japan

Continuous-wave operation in green-to-yellow spectral region wasdemonstrated with BeZnCdSe quantum-well laser diodes. The lasing
wavelength of the fabricated yellow laser diode was 571 nm. Light
output power of the green and yellow laser diode was as high as 50
mW with a low threshold current density.
PRJ4 - 3
14:50

High Efficiency and Highly Reliable 638 nm Broad
Stripe Laser Diode for Display Applications
T. Yagi, N. Shimada, T. Nishida, H. Mitsuyama,
M. Miyashita
Mitsubishi Elec., Japan638 nm broad stripe laser LD was newly developed. The LD has thelarge optical conﬁnement factor design for high WPE and the windowmirror structure for reliable operation. The LD shows WPE of 35% at
25 C, 44 lm/W, and highly stable operation at 35 C, 550 mW up to
8,000 hours.

175

PRJ

We report recent progress for InGaN-based lasers diodes fabricated on
nonpolar/semipolar substrates. In the green, we demonstrate singlemode lasers operating with >3.5% wall-plug-efﬁciency and 190 mW
output power. In the blue, we demonstrate single-mode lasers with>23% wall-plug-efﬁciency and high power lasers operating with >2.5 W
of output power.

Friday

December 7

PRJ4 - 4L: Invited High-Power, Long-Lifetime Green Laser
15:10
Diodes with Wavelengths above 525 nm Grown on
Semipolar {20-21} GaN Substrates
K. Tasai, H. Nakajima, K. Naganuma, Y. Takiguchi,
T. Hamaguchi, N. Futagawa, K. Yanashima, M. Ikeda,
Y. Enya*, S. Takagi*, M. Adachi*, T. Kyono*, Y. Yoshizumi*,
T. Sumitomo*, Y. Yamanaka, T. Kumano*, S. Tokuyama*,
K. Sumiyoshi*, N. Saga*, M. Ueno*, K. Katayama*,
T. Ikegami*, T. Nakamura*Sony, Japan*Sumitomo Elec. Inds., JapanGaInN-based green laser diodes (LDs) with wavelengths above 525
nm were fabricated on semipolar {20–21} GaN substrates. The LDs
were estimated to have lifetimes of over 5000 h for an optical output
power of 50 mW at a case temperature of 55 C under continuous-wave
operation.
Author Interviews and Demonstrations
17:30 – 18:30
Supporting Organizations:
Information Display Research Committee, ITE
Laser Display Technology Research Group, Optical Society of Japan

IDW/AD ’12 Tutorial in Japanese
Organized by SID Japan Chapter
Monday, December 3, 2012
Room B-2, 2F
Kyoto International Conference Center
Detailed information is available on
http://www.sidchapters.org/japan/

EXHIBITION
12:40 – 18:20 Tuesday, Dec. 4, 2012
10:00 – 18:00 Wednesday, Dec. 5, 2012
10:00 – 18:00 Thursday, Dec. 6, 2012
10:00 – 14:00 Friday, Dec. 7, 2012
Event Hall, 1F
Kyoto International Conference CenterFree admission with your registration name tag
176

TuesdayDecember 4Workshop on Electronic Paper
Tuesday, December 4
14:20 - 15:55

Room D

EP1: Electrophoretic Displays
Chair:
Co-Chair:T. Kitamura, Chiba Univ., Japan
M. Tsuchiya, E-ink, Japan

EP1 - 1:
14:20

Invited Color Electrophoretic e-Paper Using
Independently Movable Colored Particles
N. Hiji, Y. Machida, Y. Yamamoto, K. Shigemura*Fuji Xerox, Japan*NLT Techs., Japan

EP1 - 2:
14:45

Invited Bright e-Skin Technology and Applications
K.-M. H. Lenssen
Philips Res., the Netherlands

The most promising technologies for bright e-Skin, with a highly
transparent state, are based on movement of colored particles. The
ultra-low power consumption enables zero-energy e-Skin, which wasdemonstrated for in-plane electrophoretic and electrokinetic panels.
The state-of-the-art of e-Skin technology as well as an overview ofapplication areas are presented.
EP1 - 3:
15:10

Invited High Performance Particle Materials andFluids for Colour Filter Free, Colour Electrophoretic
Displays
M. Goulding, L. Farrand, A. Smith, H. Wilson, R. Kemp,
T. Schwalm, E. Thomas, C. Topping, C. Berger,
M.Hesselbach*, M. Koch*, N. Greinert*, T. Bauer*
Merck Chems., UK*Merck KGaA, Germany

Colour reﬂective displays with “printed paper” luminance and moderate
response times remain a challenging target for display designers. Asan alternative to colour ﬁlter over monochrome electrophoretic (EPD)
ﬂuid, intrinsic colour EPD ﬂuids are demonstrated. This paper presents
recent developments in printable colour reﬂective and transmissive
EPD ﬂuids.

177

EP

We have developed a novel color-ﬁlter free color electrophoretic
e-Paper based on a IMCP (independently movable colored particles)
technology using plural particles with different colors and thresholdﬁelds. The e-paper is a promising technology that has a feasibility toenable a print level color quality.

TuesdayDecember 4

EP1 - 415:35

150 to 225 ppi Large Area Flexible OTFT Backplanesfor Monochrome and Colour Electrophoretic
Displays
P. A. Cain, S. Norval, J. D. Watts, M. Haugwitz*
Plastic Logic, UK*Plastic Logic, Germany

We present a new device architecture and process that enables higher
resolution ﬂexible oTFT displays, and demonstrate this in a 2.8 million
pixel display. Secondly, we present ﬂexible colour reﬂective displays
made with this architecture, and show the performance consistency
achieved with this qualiﬁed manufacturing process.
----- Break ----16:10 - 17:20

Room D

EP2: Reflective Displays and Evaluations
Chair:
Co-Chair:N.-S. Roh, Samusung Display, Korea
A. Suzuki, Chiba Univ., Japan

EP2 - 1:
16:10

Invited Ambient Light Reflectivity and Readability of
Flat and Curved (Reflective) Displays
K. Blankenbach, A. Sycev
Pforzheim Univ., Germany

The optical performance of reﬂective and ﬂexible displays is essential
for readability. We measured reﬂectance and contrast ratio
characteristics of ﬂat and curved displays, the latter especially tends to“capture” specular light sources. An improved and easy-to-use
measurement set-up for angular reﬂection distribution was engineered
and successfully evaluated.
EP2 - 2:
16:35

Invited Driving Colorants for Print-Like Color– Beyond Electrophoresis
J.-S. Yeo
Yonsei Univ., Korea

Approaches generally adopted for transmissive displays prove to be
inefﬁcient for reﬂective color so the stack architecture with layered
colorants is considered a path for print-like color. Effective layering
requires driving of colorants beyond electrophoresis to optimize all theelectrokinetic forces in electronic ink along with electrode andencapsulant conﬁgurations.

178

Tue./Wed.

December 4/5

EP2 - 3
17:00

Advanced Driving Techniques in Electrowetting
Display
Y. J. Jang, N. G. Choi, J. W. Jeong, G. J. Park,
H. S. Hwang, C. W. Park, B. H. You
Samsung Display, Korea

Electric ﬁeld of electrowetting should be disturbed periodically toprevent the oil backﬂow. High voltage called "reset" is used for thisscheme though it reduces the performance of display. In this paper, we
propose a dynamic output control driving to get the improved contrast
ratio (>26.7) and color gamut (>34.8%).
Author Interviews and Demonstrations
17:50 – 18:50

Wednesday, December 5
9:00 - 10:05

Room B-2

Chair:
Co-Chair:H. Higuchi, NIMS, JapanS. Maeda, Tokai Univ., Japan

EP3 - 1:
9:00

Invited Electrochromism andElectrochemiluminescence as Novel Display
Technology

EP

EP3: Electrochromic Displays and Others (1)N. Kobayashi
Chiba Univ., JapanWe are studying novel electronic paper technology withelectrochemical reaction. Our phthalate-based electrochromic (EC)cells were suitable for full-color e-paper. Also we invented dual-mode
display (DMD) cell which shows EC as reﬂective-mode andelectrochemiluminescence (ECL) as emissive-mode. In this paper, we
reported phthalate-based full-color EC system and our DMD cell.
EP3 - 2
9:25

High Resolution Technology for Multi-Layered
Electrochromic Display
Y. Okada, T. Yashiro, Y. Naijoh, S. Hirano, S. Kim, K. Tsuji,
H. Takahashi, K. Fujimura, H. Kondoh
Ricoh, Japan

Multi-Layered Electrochromic Display (mECD) we have demonstrated
is superior in terms of brightness and color reproducibility to theconventional full-color reﬂective electronic papers. By utilizing anematic liquid crystalline (LC) electrolyte, we have obtained highresolution images of mECD without any ﬁne patterning in the frontplane.

179

Wednesday

December 5

EP3 - 3
9:45

Multicolor Electrochromic Device with
Electrochemically Size-Controlled Silver
Nanoparticles
A. Tsuboi, K. Nakamura, N. Kobayashi
Chiba Univ., Japan

Novel multicolor electrochromic (EC) device with on electrochemicalsilver deposition mechanism was successfully demonstrated. The novel
EC device enabled reversible color change between transparent, redand blue color in a single cell by using voltage step method which
controlled the size of deposited Ag nanoparticles.
----- Break ----10:50 - 11:30

Room B-2

EP4: Electrochromic Displays and Others (2)Chair:
Co-Chair:N. Kobayashi, Chiba Univ., Japan
Y. Toko, Stanley Elec., Japan

EP4 - 1
10:50

New Paper Displays Using Electrochromic /Vapoluminescent Organic-Metallic Hybrid Polymer
Films
M. Higuchi*,**, J. Zhang*,**, T. Sato*,***NIMS, Japan**JST-CREST, Japan

We revealed organic-metallic hybrid polymers show different properties
by changing the metal ions: the polymers including Fe, Ru, Cu, and Co
ions have excellent electrochromic properties, and the polymer bearing
Eu ions exhibits unique vapoluminescence. We herein report theelectrochromic printing technique and the vapoluminescent display.
EP4 - 2
11:10

Novel Image Displaying Medium Enabling ThermoSwitchable Emission and Coloration by Using
Lanthanide(III) Complex and Leuco Dye
K. Nakamura, Y. Kobayashi, K. Kanazawa, N. Kobayashi
Chiba Univ., Japan

Multi-functional composite ﬁlm showing thermoresponsive absorption
and emission was demonstrated by using thermochromic leuco dye,developer and luminescent Europium(III) complex; the coloration andbleaching of the leuco dye enabled control of the photoluminescence of
the Eu(III) complex by thermal stimuli.
11:30 - 12:20

Room B-2

Short Presentation EPp: Electronic Paper
All authors of poster papers for the EPp session will give brieforal presentations of 3 minutes in advance.
----- Lunch ----180

Wednesday

December 5

14:00 - 17:00

Event Hall

Poster EPp: Electronic Paper
EPp - 1

Molecular Design of Particles for Electrophoretic
Displays by Using I/O Value
R. Nakazawa, T. Suzuki, S. Maeda
Tokai Univ., JapanThe key technology in obtaining successful electrophoretic displays isutilizing appropriate surfactants for dispersing these particles. To
reduce the R&D time and cost, ﬁnding useful parameters for applicablesuitable surfactants is necessary. We demonstrate that I/O value is oneof useful parameters in order to ﬁnd such surfactants.
EPp - 2Monte Carlo Simulation of Coloration by Mixture of
Pigment Particles
Y. Kurimoto, T. Koda, A. Nishioka, K. Miyata
Yamagata Univ., Japan

EPp - 3

Principal Component Analysis of Multi-Pigments
Transposition in Full-Color Electrophoretic Display
Y.-H. Lu, Y.-H. Chiu, C.-H. Tien
Nat. Chiao Tung Univ., Taiwan

A methodology is introduced to characterize colorimetric performanceof full-color EPD. The concept of PCA beneﬁted simplifying complicatedsystem through spectral eigenvectors. Proposed model was validated
to predict chromatic feature with high accuracy. Due to its simplicity,
proposed technique will has a promising impact on color
characterization in emerging displays.
EPp - 4

Black and White Particles Movement inElectrophoretic Image Display by Low Driving
VoltageY. Yagi, T.Shimogata, N. Kuranai, S. Nakamura,
T. Kitamura
Chiba Univ., JapanThe fundamental display characteristics such as gap distance andelectrophoretic particle concentration in an electrophoretic image
display (EPID) were examined. An applied electric-ﬁeld intensity
dependence of the display characteristics in an electrophoretic display
cell was measured. Movements of black and white particles in the very
narrow gap and in high particle concentration were discussed.

181

EP

We propose Monte Carlo simulation using hard repulsive models fordevelopment of new color electronic paper which contains four color
pigments per pixel. Simulation results are analyzed in two dimensional
chromaticity coordinate. We examine possibility of full coloration by atype of electric paint.

Wednesday
EPp - 5

December 5
A Novel Imaging Process for Modified Encapsulated
Ch LCDM. H. Yang, W.-T. Chen, C.-Y. Wu
ITRI, Taiwan

A novel water-addressing process for the modiﬁed encapsulated
ChLCD without any electrode is demonstrated in this paper. The
reﬂectance of the planar state and focal conic state is 22.52% and4.85%, respectively. This discovery creates opportunities for signage
boards, applications, etc.
EPp - 6The Relationship between Manufacturing Process
and Optical Performance in Polymer-Stabilized
Cholesteric Texture
Y.-S. Tsai, H.-Y. Tseng*, T.-H. Lin*, K.-T. Chen,
W.-W. Chiu, C.-C. Lai, P.-W. Liu, Y.-J. Chao
ITRI, Taiwan*Nat. Sun Yat-Sen Univ., Taiwan

In this article, we controlled the manufacturing process with different
exposure time and exposure power of UV light on polymer stabilizedcholesteric texture (PSCT). Evidences showed that with increasing
exposure energy, the viewing angle of PSCT was increased while thereﬂectivity was decreased in the 0-degree viewing angle.
EPp - 7

Thermal Stability of Gray-Scale Levels on Optical
Rewritable Electronic Paper
J. Sun, Y. Ma, X. Wang, V. G. Chigrinov
Hong Kong Univ. of S&T, Hong Kong

In this paper, the thermal stability of the gray-scale levels on the opticalrewritable (ORW) electronic paper is checked by heating the 10 µm-gap
cell with different temperatures at 80 C, 100 C, 120 C, 140 C and 160 C
for 3 minutes, respectively. It shows that the gray-scale levels on ORW
will return to the previous state after the above mentioned celltemperatures cool down to room temperature, which shows a memory
effect.
EPp - 8

Improvement of Pixel Structure in Electrowetting
Display for Display Memory
T. Saito, K. Funatsuki, T. Takahashi, Y. Toko*
Kogakuin Univ., Japan*Stanley Elec., JapanThe electrowetting display has good performances, however, it is
difﬁcult to provide a display memory. It is one of the important functions
for the electronic paper. A novel pixel structure with the barrier structure
was proposed. And the memory switching by the applied voltage wasattempted in the novel pixel.

182

Wednesday
EPp - 9December 5Model Experiment Intended to Lower Driving
Voltage of Twisting Ball Electronic Paper
K. Yamazaki, S. Maeda
Tokai Univ., Japan

We report the theoretical study for and the model experiment systemon twisting ball displays for lowering their driving voltage toward theapplication of digital signage. We found that antimony sulﬁde is quite
effective to lower the driving voltage of twisting ball displays using themodel of experimental system.
EPp - 10

Immobilization of Phthalate Derivatives on ITO
Electrode Prepared by Using Silane Coupling Agentand Their Electrochromic Properties
N. Ura, K. Nakamura, N. Kobayashi
Chiba Univ., Japan

EPp - 11The Effect of Illuminance on Visibility during
Reading e-books by Age Groups
S. Sano, T. Kojima, M. Miyao
Nagoya Univ., Japan

We carried out experiments to evaluate the visibility of reading tablet
devices and e-papers under conditions of staged illuminance. In theexperiments, we measured reading time and conducted subjective
evaluations. This study found a dependency between visibility andilluminance of each device by age groups.
EPp - 12Batteryless Electronic Paper Using Wireless Power
Transfer with Resonant Capacitive Coupling
T. Takahashi, R. Hattori, A. Watanabe*, H. Ishinishi*
Kyushu Univ., Japan*Network Appl. Eng. Labs., JapanThe capacitively-coupled wireless power transfer system embedded in
the e-Paper device was demonstrated. This system realizes abatteryless e-Paper with a wide power-supply position. 13.56 MHz
power transfer frequency was employed and the frequency wasmodulated to keep the resonant conditions.

183

EP

Electrochromism is known as electrochemical reaction exhibitingcoloration, and is applicable to a new imaging device. In this paper, we
prepared novel modiﬁed electrode using Si coupling agent on ITO
deposit. Novel modiﬁed electrode achieved better memory effect andlower coloration potential in comparison with previous modiﬁedelectrode using TiO2.

Wednesday
EPp - 13L

December 5Comparison of Eye Fatigue between LCD SmartPhone and Paper Book
S. Mori, M. Omodani
Tokai Univ., Japan

We have measured eye fatigue of reading on a paper book and LCD
smart-phone during 90 minutes of reading with a hand-holding
condition of the media. Subjective answer of readers indicated thatreading on an LCD smart-phone was slightly more fatiguing than thaton a paper book.
EPp - 14L

Psychological and Physiological Reactions When
Reading E-book Readers with Sound Effects
H. IsonoTokyo Denki Univ., Japan

We measured psychological and physiological reactions when reading
e-book content with and without sound effects. Adding sound effects
that match the content of the e-book can create a new reading
experience that is not possible with paper books.
EPp - 15L

Comparison of Comprehension Performance ofReadings on a Display with Full Page View and
Scrolling Partial View
J. Inada, M. Omodani
Tokai Univ., Japan

We have measured reading speed and comprehension rate on display
with the two displaying conditions. The partial page showing conditionindicated a longer reading time and lower correct answer rate. The
frequent interruption brought by frequent operation of scrolling mightcause the longer reading time and the lower comprehension level.
EPp - 16L

Rough and Smooth ITO Films Fabricated by SprayCVD for Transparent-Mirror-Black Three-Way
Electrochemical Smart Window
R. Onodera, Y. Seki*, S. Seki, K. Yamada*, Y. Sawada*,
T. Uchida*
Sendai Nat. College of Tech., Japan*Tokyo Polytechnic Univ., Japan

A novel electrochemical smart window with three-way reversible states
between transparent, mirror and black was successfully fabricated bydepositing a pair of transparent conducting electrodes, the surfaces ofwhich are rough and smooth, respectively. Both ITO transparent
conducting ﬁlms prepared by spray CVD process to reduce theproduction cost.
Author Interviews and Demonstrations
17:30 – 18:30
Supporting Organization:
The Imaging Society of Japan184

Thursday

December 6

Workshop on MEMS and Emerging
Technologies for Future Displays and Devices
Thursday, December 6
9:00 - 9:05

Room D

Opening
Opening Remarks
9:00
M. Nakamoto, Shizuoka Univ., Japan
9:05 - 10:40

Room D

MEET1: MEMS Imaging and Sensing
Chair:
Co-Chair:D. Pribat, Sungkyunkwan Univ., Korea
N. Fruehauf, Univ. of Stuttgart, Germany

MEET1 - 1: Invited Nanotechnology Convergence for
9:05
Electronics Applications
J. M. Kim

We present the current and future nanotechnology, especially focusing
on the convergence of nano with electronics, and photonics. Nanoelectronics will cover the graphene and carbon nanotubes, and theirapplications in ﬂexible and transparent electrodes, and transistors.
Nano-photonics will include quantum-dot displays and otherapplications.
MEET1 - 2: Invited MEMS-Based Uncooled Infrared Sensors
9:30
M. KimataRitsumeikan Univ., Japan
Uncooled infrared sensors are among the most successful integrated
microelectromechanical systems (MEMS) devices. This paper
describes the role of MEMS technology in uncooled infrared sensor
development and advances in high-performance uncooled infrared
focal plane arrays. Recent trends in small-format infrared array sensors
are also analyzed.

185

MEET

Univ. of Oxford, UKThursday

December 6

MEET1 - 3: Invited Design of a Novel Integrated Light Guiding
9:55
Plate without the Reflective Sheet for Backlight
Module Application
Y.-W. Hu*, B.-T. Chen*, J.-W. Pan*,***Nat. Chiao Tung Univ., Taiwan**Chi Mei Medical Ctr., Taiwan

We design a backlight system, which consists of a novel light guideplate (LGP) and one diffuser. Comparing with a conventional backlight
module, the on-axis luminance can be improved up to 6.1-times andthe half-luminance angle decreased to 10 degrees in the verticaldirection.
MEET1 - 4
10:20

Micro-Oscillator for Non-Contact Voltage Sensing
S. Hasegawa, S. Kumagai, M. Sasaki
Toyota Tech. Inst., Japan

Non-contact voltage sensor which can keep the electrical isolation isrealized using the phenomenon that the resonator is inﬂuenced in its
resonant frequency by the electrical ﬁeld from the high voltage. The
experimental results are well explained by the theory indicating thefeasibility of the non-contact voltage sensor.
----- Break ----10:50 - 12:20

Room D

MEET2: Fundamental Components and Process Technologies
Chair:
Co-Chair:Y. Aoyagi, Ritsumeikan Univ., Japan
Y. Bonnassieux, Ecole Polytechnique, France

MEET2 - 1: Invited CNT and Graphene for Field Emission
10:50
Applications
W. I. Milne, S. Iacobucci*, M. Fratini*, Y. Zhang*, L. Wei**,
C. Li, M. Cole*
Univ. of Cambridge, UK*Univ. Roma, Italy**Southeast Univ., China
This paper details the use of carbon nanotubes and graphene for key
ﬁeld emission applications. We describe the growth of nanotubes andtheir optimization for use in electron microscopes, ﬁeld emission
displays and x-ray sources. We also present a novel edge-emitting
graphene based structure for large area electron emission displays.

186

Thursday

December 6

MEET2 - 2: Invited Fabrication of Stable CNT Emitters for
11:15
Lighting Devices
K. C. Park, Y. J. Eom, S. W. Lee, H. N. Won, J. S. Kang,
J. Jang
Kyung Hee Univ., Korea
The high current density and long life electron emitter with carbon
nanotubes were studied for lighting device application. CNT emitterswith triode structure show high brightness for general lighting and x-ray
sources. Detail of electron emission properties of CNT emitters andtheir lighting device performance will be discussed.
MEET2 - 3
11:40

Vacuum Sealed X-Ray Tubes with Nano Emitter and
Built-in Control Circuit for Stable Emission Current
J.-W. Jeong*, S. Choi*, J.-T. Kang*, J.-W. Kim*,**,
Y.-H. Song*,***ETRI, Korea**Univ. of S&T, Korea

Vacuum sealed X-ray tubes with carbon nano-tube (CNT) emitter weresuccessfully developed. The good vacuum level of sealed tube wasindirectly veriﬁed from the steady ﬁeld emission current. More stableﬁeld emission current was attained from the simple built-in circuit.
Fabrication of Small Area CNT Emitters for High
Current Density X-Ray Source

MEET

MEET2 - 4
12:00

Y. J. Eom, S. W. Lee, H. N. Won, J. S. Kang, J. Jang,
K. C. Park
Kyung Hee Univ., Korea
We report on the stabilized high current emission of carbon nanotubes(CNTs). The CNTs can endure a high current and stable in long time
operation. The electron emission current strongly depends on thegrowth conditions. By using this CNT emitter, we can make the highresolution X-ray source.
----- Lunch ----14:00 - 15:15

Room D

MEET3: E merging Technologies
Chair:
Co-Chair:W. I. Milne, Univ. of Cambridge, UK
J. M. Kim, Univ. of Oxford, UK

187

Thursday

December 6

MEET3 - 1: Invited Si and Al Nanostructures for Advanced
14:00
Li-Ion Battery Anodes
D. Pribat, T. H. Nguyen
Sungkyunkwan Univ., Korea
Aluminum is an interesting material for alloying with lithium in anodesof Li-ion batteries. However, anodes based on Al degrade rapidly uponcharge-discharge cycling, hampering commercial developments. We
have used Al, in core-shell nanostructures. We report impressive
anode stability, manifested by 100,000 charge-discharge cycles at highrate (120 C).
MEET3 - 2: Invited Large Area Micro-Plasma Excited AlGaN Deep
14:25
Ultraviolet Light Emitter
Y. Aoyagi, N. Kurose
Ritsumeikan Univ., JapanDUV light emitter using micro-plasma excitation is successfully
fabricated for the ﬁrst time. Size of the device is 2-in. and operation
wavelengths from 229 nm to 400 nm were conﬁrmed. This new DUVlight emitter makes possible to enlarge the size to more than 1 m x 2 m
just like PDP display.
MEET3 - 3: Invited Metal Oxide for Large Area Electronics
14:50
J. Jang, C. Avis, H. M. Kim, A. R. B. M. Yusoff, H. P. Kim,
S. H. Kim
Kyung Hee Univ., Korea
Metal oxide semiconductors can be applied not only to anode andcathode buffer layers of OLED and OPV, but also to active layer andgate insulator of TFTs for displays and sensors. The applications to
TFT, OPV, OLED and QLED will be reviewed on the basis of ourresults.
MEET3 - 4

Withdrawn----- Break -----

15:50 - 17:10

Room D

MEET4: Display and Imaging
Chair:
Co-Chair:J. Jang, Kyung Hee Univ., Korea
M. Kimata, Ritsumeikan Univ., Japan

MEET4 - 2: Invited Pentacene OTFT, Device Contacts Geometry
15:50
and Insulator Choice
Y. Bonnassieux, C.-H. Kim, G. Horowitz
Ecole Polytechnique, France
Organic thin-ﬁlm transistors are getting much attention due to therecent rapid advances in their performances. In this paper, we present
organic thin-ﬁlm transistors driven OLED and its fabrication method,
performance and applications. We also propose a complete process tomake a full organic pixel for AMOLED displays.
188

Thursday

December 6

MEET4 - 3

Withdrawn

MEET4 - 4
16:15

Tunable Color Device of Cellulose Aqueous
Solution
Y. Kimbara, K. Sano, S. Ishihara, S. Uto
Osaka Inst. of Tech., Japan

Hydroxypropyl cellulose (HPC) aqueous solution forms cholestericliquid crystal phase which has selective reﬂection ability. The reﬂection
color can be changed by applied voltage. In this study, we are trying to
make a color tunable display device of HPC. The color of the device
was changed by applied voltage successfully.
MEET4 - 5
16:35

Enhancing the Reliability of Electro-Wetting Display
by Improving the Structure and Materials
K.-W. Lan, Y.-S. Ku, K.-L. Lo, S.-W. Kuo, Y.-H. Tsai,
K.-C. Lee, P.-P. Cheng, C.-Y. Wu, J.-L. Chen,
W.-Y. Cheng
ITRI, Taiwan

MEET4 - 6L Key Challenges to Affordable See Through Wearable
16:55
Displays: The Missing Link for Mobile AR Mass
Deployment
K. Mirza, K. Sarayeddine
Optinvent, France
Low cost see-through technologies for wearable AR displays havebeen an elusive key element to enable the market for consumer
oriented mobile AR. This paper will explore the various available
technologies and the key challenges to develop a platform that will
enable affordable wearable displays for the consumer market.
Author Interviews and Demonstrations
17:30 – 18:30

EuroDisplay 2013
September 16-19, 2013
Imperial College London
London, UK
189

MEET

Electro-wetting display (EWD) is one of the potential technologies
because of its higher transparence, colorful choosing, and faster
response time. This paper described how to enhance the performanceand reliability of transparent electro-wetting display (EWD) by using
two-layer hydrophilic rib structure and development of pigment basedink.

TuesdayDecember 4Workshop on
Display Electronic Systems
Tuesday, December 4
14:15 - 14:20

Room C-2

Opening
Opening Remarks
14:15
T. Fujine, Sharp, Japan
14:20 - 15:55

Room C-2

DES1: SUPER Hi-VISION Public Viewing
Chair:
Co-Chair:T. Yamamoto, NHK, Japan
S. Ono, Panasonic, Japan

DES1 - 1:
14:20

Invited SUPER Hi-VISION Public Viewing at London
2012 Olympic Games
K. Ishii, M. Sugawara, Y. Shishikui, T. Ito
NHK, Japan

SUPER Hi-VISION (SHV) broadcast technology can transmit suchrealistic images and sounds that the viewers feel as if they are actually
there. We have developed the broadcasting equipment necessary for
the SHV system. We introduce an outline of an SHV public viewing
using the latest technology of the London 2012 Olympic Games.
DES1 - 2:
14:40

Invited The 8K LCD for SUPER Hi-VISION
T. Kumakura, M. Shiomi, K. Shirai, M. Takahashi,
M. Onoue, N. Hojo, A. Inoue, S. Horino, Y. Yoshida
Sharp, Japan

We have successfully developed an 85-in. 8Kx4K LCD for SUPER HiVISION. This LCD has a panel of 7680 by 4320 pixels and the single
pixel size measures 0.245 mm. And the input and internal interface
have been upgraded to the optical ﬁber system which is useful in
Public Viewing.
DES1 - 3:
15:05

Invited Public viewing of 145-in. Diagonal SUPERHi-VISION PDPs
R. Murai, H. Nakahigashi, I. Horiuchi, K. Ishii*,
N. Shimidzu*, T. Usui*
Panasonic, Japan*NHK, JapanWe developed a prototype 145-in. full resolution SUPER Hi-VISION
PDPs. (SHV-PDPs) We received a very favorable reception at the
public viewing we staged at the 2012 London Olympics. We also
exhibited our SHV PDPs at the IFA Consumer Electronics Show 2012
in Berlin, Germany.
190

TuesdayDES1 - 4:
15:30

December 4
Invited SUPER Hi-VISION Projectors Used in Public
Viewing of London 2012 Olympic GamesY. Kusakabe, Y. NishidaNHK, JapanNHK hosted SUPER Hi-VISION (SHV) public viewings of the London
2012 Olympics in Japan, the United Kingdom, and the United States incooperation with the Olympic Broadcasting Services (OBS) and theBritish Broadcasting Corporation (BBC). The outline of public viewing
and features of the SHV projectors will be presented.
----- Break ----16:10 - 17:30

Room C-1

DES2/VHF2: Color (2)Chair:
Co-Chair:

M. R. Luo, Univ. of Leeds, UK
T. Fujine, Sharp, Japan

DES2/
VHF2 - 1:
16:10

Invited Measuring Light and Color: Defining Color
Rendering Property of Artificial Illuminants
N. OhtaRochester Inst. of Tech., USA

The basis of the CIE standard colorimetric system was established as
early as in 1931. After that, varieties of applications have beendeveloped. Among them, I will today explain the method widely appliedin the industrial ﬁeld for evaluating the color rendering of light sources.
Invited Development of Laser Backlighting LCD
Television

DES

DES2/
VHF2 - 2:
16:40

E. Niikura, R. Murase, S. Kagawa, N. Nakano,
A. Nagase, H. Sakamoto, T. Sasagawa, K. Minami,
H. Sugiura, K. Shimizu, M. Hanai
Mitsubishi Elec., Japan

We have developed a laser backlighting LCD television using a LD for
one of the light sources. The backlighting system of this TV uses two
kinds of light source. One is a red LD and the other is a cyan LED. We
realized a wide color gamut from this TV.

191

Tue./Wed.

December 4/5
The Effect of Lightness Component on Preferred
Skin Color Reproduction of a Display

DES2/
VHF2 - 3
17:10

S.-H. Chen, H.-S. Chen, N. Ohta*, R. Luo**, N.-C. Hu
Nat. Taiwan Univ. of S&T, Taiwan*Rochester Inst. of Tech., USA**Univ. of Leeds, UK

It is important to understand preferred skin color reproduction in display
industry. The aim of this study is to examine the relationship between
the brightness of skin color and perceived preference. The experiments
are conducted to determine the preferred skin color ranges onchromatic components and lightness component on display.
Author Interviews and Demonstrations
17:50 – 18:50

Wednesday, December 5
9:00 - 10:10

Room C-2

DES3: Low Power Consumption
Chair:
Co-Chair:S. Takamura, NTT, Japan
H. Okumura, Toshiba, Japan

DES3 - 1:
9:00

Invited Low Power Consumption Technology for
Ultra-High Resolution Mobile Display by Using
RGBW System
A. Sakaigawa, M. Kabe, T. Harada, F. Goto, N. Takasaki,
M. Mitsui, T. Nakahara, K. Ikeda, K. Seki, T. Nagatsuma,
A. Higashi
Japan Display West, Japan

In this paper, the basic concept and performance of a new RGBW
technology is described, such as low power consumption, color image
reproducibility and outdoor visibility. In addition, a newly developed
4.38-in. Full HD (1920 x 1080) 503 ppi prototype LCD utilizing this new
RGBW technology is described.
DES3 - 2
9:30

High-Efficiency and Low-Cost Passive Matrix
Cholesteric ESL Prototype System
C.-C. Hsu, C.-H. Wu, H.-Y. Hsieh, C.-J. Chen, Y.-S. Chang,
C.-C. Wu, T.-H. Yu, K.-T. Chen, Y.-J. Cho, H.-S. Hsu*
ITRI, Taiwan*GiantPlus Tech., Taiwan

A high-efﬁciency and low-cost ESL prototype system for multi-color
cholesteric LCDs has been developed. It contains a highly-integrated
timing controller, high-efﬁciency circuits and temperature compensatedcircuits, showing thin and light-weight features. The prototype has beensuccessfully veriﬁed on ITRIʼs cholesteric LCDs which exhibit highcontrast and good image quality.

192

Wednesday

December 5

DES3 - 3
9:50

A Novel Power Control by Modulated Power
Algorithm (MPA) for AM-OLED Application
C.-C. Chiu, S.-M. Chang
Chunghwa Picture Tubes, Taiwan

We proposed a modulated power algorithm (MPA) for AMOLED panel
to monitor power consumption. The duty ratio of emission control pin of
pixel circuit is regulated and its duty ratio is calculated by MPA.
Consequently, the constant power consumption is achieved and OLED
lifetime and image quality are improvements.
----- Break ----10:50 - 11:30

Room C-2

DES4: Display Electronic Systems
Chair:
Co-Chair:A. Sakaigawa, Japan Display West, Japan
A. Nagase, Mitsubishi Elec., Japan

DES4 - 1
10:50

Image Denoising Method Based on Non-Local
Means Filter and Noise Estimation
J. S. Lim, S. I. Cho, Y. H. Kim
Pohang Univ. of S&T, Korea

This paper proposes a denoising method based on a non-local (NL)
means. The NL-means algorithm is effective to remove a Gaussian
noise, but the denoising parameter should be controlled depending on
the noise for proper noise elimination. The proposed method gives the
optimal denoising parameter according to the noise levels.
Integrated 3D System with Multi-Touch

DES

DES4 - 2
11:10

C.-L. Li, J.-S. Liao, H.-H. Chen, D.-W. Kuo, H.-M. Su
Chunghwa Picture Tubes, Taiwan

Chunghwa Picture Tubes, LTD. (CPT) sets up an integrated multi touch
3D system that not only supports 3D picture display in both portrait andlandscape but also provides suitable multi-touch gestures automaticallyfor 2D and 3D mode separately.
11:30 - 11:40

Room C-2

Short Presentation DESp: Display Electronic Systems
All authors of poster papers for the DESp session will give brieforal presentations of 3 minutes in advance.
----- Lunch ----14:00 - 17:00

Event Hall

Poster DESp1: Poster: Display Electronic Systems (AR)Special Topics of Interest on Augmented Reality
193

Wed./Thu.

December 5/6

DESp1 - 1

Image Synthesis from Illumination Estimation
T.-H. Lin
Nat. Taiwan Univ. of S&T, Taiwan

Our proposed method synthesizes images with cast shadows andshading of 3D graphic models. We use a calibration board and a plastic
gaze ball for illumination estimation. Then, 3D graphic models
corresponding to the light directions and relative intensities aresuperimposed to induce photorealistic images.
14:00 - 17:00

Event Hall

Poster DESp2: Poster: Display Electronic Systems
DESp2 - 1

TFT-LCD Auto-Adjust Gamma Curve System
S.-S. Syu, Y.-Y.Chen
Shenzhen China Star Optoelect. Tech., China

Due to the variety of LCD manufacturing and materials, the gamma
curve of displays would be different. This study presents a system
structure and algorithms to implement an auto-adjust gamma systemfor quickly adjusting the ﬂick and gamma curve of TFT-LCD on the
production line.
DESp2 - 2

An Image Quality Model for Optimizing Color
Performance of Display System
H.-T. Yang, P.-L. Sun, R. M. Luo
Nat. Taiwan Univ. of S&T, Taiwan

An image quality model based on contrast, naturalness, hue accuracy
and vividness measurements was derived from a series psycho-visualexperiment. Optimal color performance of a display system could beachieved by maximizing the image quality scores via tuning its tone
curves iteratively.
Author Interviews and Demonstrations
17:30 – 18:30

Thursday, December 6
14:00 - 15:35

Room B-1

DES5: Recent Advances in Augmented Reality Applications
Special Topics of Interest on Augmented Reality
Chair:
Co-Chair:

194

K. Makita, AIST, Japan
M. Tsuchida, NTT, JapanThursday
DES5 - 1:
14:00

December 6
Invited SmartAR: Integrated Augmented Reality
Technology for Novel Application Creation
T. Yoshigahara
Sony, Japan

Sony has developed integrated Augmented Reality technology called
as “SmartAR.” Fast object recognition and dynamic 3D space
recognition have enabled us to propose various novel applications. In
this talk, we present an outline of the development of SmartAR and thevarious applications we created.
DES5 - 2:
14:25

Invited Mixed Reality Applications of Design
Engineering & Manufacturing
T. AsoCanon, Japan

Canon started Mixed Reality solution business this year. We areplanning to develop this solution business from the design engineering& manufacturing ﬁeld. It enables the intuitive evaluation of design data
created by 3D-CAD. Canon is going to develop new business domain
by Mixed Reality.
DES5 - 3:
14:50

Invited Recent Trends on Visual Tracking forAugmented Reality
H. Uchiyama
Toshiba, Japan

Computer vision technologies play an important role for estimating andtracking a camera pose in augmented reality. This paper reports stateof-the-art visual tracking technologies and classiﬁes them into three
categories: ﬁducial marker based augmented reality, object templatebased augmented reality and wide area augmented reality.
Texture Significant Hash Function with Robust
Occlusion Handling for Fast Inpainting the
Virtualized-Reality Models

DES

DES5 - 4
15:15

K. Thangamani*,**, T. Ishikawa**, K.Makita**, T. Kurata*,***Univ. of Tsukuba, Japan**AIST, Japan

This paper discusses the texture signiﬁcant hash table usage for speed
up the inpainting process in the virtualized-reality indoor models. The
proposed hash works are included in the Exemplar-Based inpainting
and this revised method is tested in the virtualized-reality indoor
models.
Author Interviews and Demonstrations
17:30 – 18:30
Supporting Organizations:
Information Display Research Committee, ITE
Information Sensing Research Committee, ITE
Special Interest Group on Mixed Reality, The Virtual Reality Societyof Japan
Technical Committee on Electronic Information Displays, Electronics
Society, IEICE
Technical Committee on Image Engineering, Information and Systems
Society, IEICE
195

TuesdayDecember 4Workshop on Flexible Displays
Tuesday, December 4
16:10 - 16:05

Room A

Opening
Opening Remarks
16:10
M. Ito, Toppan Printing, Japan
16:15 - 17:35

Room A

FLX1/AMD2: Flexible Active Matrix Devices
Chair:
Co-Chair:H. Maeda, DNP, Japan
H. Happy, IEMN, France

Invited Transfer Printing Nanowire Electronic Devices
FLX1/
AMD2 - 1: on Non-Si Substrates
16:15
C. H. Lee, X. Zheng
Stanford Univ., USAI will discuss various transfer printing methods that can fabricate
electronic devices onto diverse nonconventional substrates, such as
paper, plastics, tapes, glasses, polydimethylsiloxane, Al foils, andpolymer substrates. These ﬂexible, transparent, ultrathin, or
biocompatible devices will impact many technologies, such as ﬂexible
displays, solar cells, and biosensors.
FLX1/
AMD2 - 2
16:40

Solution-Processed and Low-Temperature ZnOBased N-Channel TFTs on Polyethylene Naphthalate
Foil, Suited for Hybrid Complementary Circuitry
M. Rockelé*,**, M. Nag*,**, T. H. Ke*, S. Botnaraş***,D. Weber***, D.-V. Pham***, J. Steiger***, S. Steudel*,K. Myny*,**, S. Schols*, B. van der Putten****, J. Genoe*,
P. Heremans**imec, Belgium**Katholieke Univ. Leuven, Belgium***Evonik Inds., Germany****Holst Ctr., the Netherlands

State-of-the-art solution-processed ZnO-based n-TFTs (µsat~ 0.6-1.1
cm²/Vs and Ion/Ioff~107) at 160 C are realized on polyethylene
naphthalate (PEN) foil, demonstrating promising uniformity and biasstress results (ΔVth~0.8 V after 104 s). The threshold voltage of 3 V
makes the technology favorable for hybrid complementary line-drive
circuitry at the borders of ﬂexible AMOLED displays.

196

Tue./Wed.
FLX1/
AMD2 - 3
17:00

December 4/5
Formation of Polycrystalline Silicon Films on Plastic
Films by Underwater Laser Annealing at Super
Low-Temperature
E. Machida*, M. Horita*,**, Y. Ishikawa*,**, Y. Uraoka*,**,T. Okuyama***, H. Ikenoue*****Nara Inst. of S&T, Japan**JST, Japan***TOYOBO, Japan****Kyushu Univ., Japan

We succeeded in the super low-temperature crystallization to highquality poly-Si ﬁlms on plastic substrates by underwater laser
annealing (WLA). WLA enhances the energy margin twice as high asthat in laser annealing in air (LA). Moreover, the crystallinity of WLA
poly-Si was much better than that of LA poly-Si.
FLX1/
AMD2 - 4L
17:20

Solution-Processed Organic Thin-Film Transistors
on a Very Thin Transparent Paper Substrate
Y. Fujisaki, H. Koga*, Y. Nakajima, M. Nakata, H. Tsuji,
M. Nogi*, T. Yamamoto
NHK, Japan*Osaka Univ, Japan

We fabricated solution-processed organic thin-ﬁlm transistors (TFTs)
on a transparent paper. A 20-nm thick cellulose nanoﬁbers ﬁlm wasused as the novel ﬂexible substrate. The TFT showed the mobility up to1 cm2/Vs. These results showed possibility toward the realization of
paper electronics & display with low-cost and low environmental
burden.
Author Interviews and Demonstrations
17:50 – 18:50

Wednesday, December 5
Event Hall

Poster FLXp: Flexible Display Technologies
FLXp - 1

Electro-Optical Properties of LCD Fabricated by Slit
Coater
K. Ohtsuka, Y. Nagataki, K. Miyashita*, H. Hirata*,
T. N. Oo, M. Kimura, T. Akahane
Nagaoka Univ. of Tech., Japan*Toray Eng., Japan

We recently reported a method utilizing a slit coater for printable liquid
crystal (LC) devices. In this study, we proposed two ultraviolet (UV)
irradiation
techniquesandinvestigatedtheelectro-opticalcharacteristics and azimuthal anchoring energy of LC sample cells
performed by the two proposed techniques.

197

FLX

9:20 - 12:20

Wednesday
FLXp - 2

December 5
The Dielectrophoresis Aligment of Silver Nanowire
for Application in Electrode Conductivity
Enhancement
C. Wei, H.-C. Chang, K.-W. Lai, W.-H. Sun*
Tatung Univ., Taiwan*ITRI, Taiwan

The silver nanowires fabricated by polyol process were deposited aselectrodes to replace the ITO. For successful implementation, thepuriﬁcation of nanowires is critical for large scale fabrication. The
dielectrophoresis was implemented to purify the silver nanowires andto implement the silver nanowires electrode.
FLXp - 3

Flexible Non-Volatile Memory Based on IndiumGallium-Zinc-Oxide with Excellent Reliability andFlexibility
Y.-S. Fan, C.-H. Hsu, C.-H. Chang, W.-H. Huang,
M.-C. Yu*, P.-T. Liu
Nat. Chiao Tung Univ., Taiwan*WINTEK, Taiwan

The memory characteristics of a-IGZO RRAM reveal excellent
reliability including 1000 times DC sweep endurance, 104 pulse
endurance, 104 s data retention with read disturb immunity.
Furthermore, this work also demonstrated on ﬂexible substrate, whichshows the very potential ﬂexibility applications.
FLXp - 4L

Novel Dielectric Metal Foil Substrates Using Anodic
Aluminum Oxide for Flexible Electronics
S. Yuuya, R. Kaito, K. Sato, K. Yamane
FUJIFILM, Japan

Novel ﬂexible substrates having thermal stability over 500 C anddielectric voltage over 500 V are developed. Aluminum or aluminumsteel clad are used for the core metal. The CTE of substrates are 5 or
10 ppm/K, respectively. Sheet-to-sheet process with a carrier glass andhigh temperature web handling in “Flexible-Electronics” is expected.
FLXp - 5L

All-Organic Self-Aligned Field-Effect Transistors
T. Muramoto, S. Naka, H. Okada
Univ. of Toyama, Japan

All-organic self-aligned ﬁeld-effect transistors were investigated. Using
the back-surface exposure method, source and drain electrodes wereself-aligned to gate electrode. Overlapping length of the gate-sourceand -drain electrodes was less than 1 µm. Transistor operation was
conﬁrmed and evaluated ﬁeld effect mobility was 0.028 cm2/Vs.

198

Wednesday

December 5

FLXp - 6L

Fabrication Energy Considerations of Flexible TFTs:
Comparison between O-TFT and LTPS TFT
N. Yamauchi, T. Noguchi*
Waseda Univ., Japan*Univ. of the Ryukyus, Japan

In this paper, we compare the organic TFTs and LTPS in terms offabrication energy. The fabrication energy of organic TFT and LTPS areevaluated based on the fabrication process.
----- Lunch ----14:00 - 15:35

Room B-1

FLX2: Organic TFTs and Related Materials
Chair:
Co-Chair:T. Sekitani, Univ. of Tokyo, Japan
H. Fujikake, Tohoku Univ., Japan

FLX2 - 1:
14:00

Invited High-Mobility Organic Active Matrices Basedon Solution-Crystallized TFT Arrays
T. Uemura*, M. Uno*,**, Y. Kanaoka**, J. Takeya**Osaka Univ., Japan**TRI Osaka, Japan

High-mobility organic active matrices based on solution-crystallized
TFT arrays are developed with 2,9-dialkyl-dinaphtho[2,3-b:2ʼ,3ʼ-f]thieno[3,2-b]thiophene (C10-DNTT). We have developed patterning
processes of solution-crystallized ﬁlms to fabricate high-mobility TFT
arrays. The average mobility was over 3 cm2/Vs. In this paper, wedemonstrate the operation of LCDs with developed high-mobility activematrix backplanes.
FLX2 - 2:
14:25

Invited Low Voltage High Mobility Organic
Semiconductors for Flexible Display Applications
K. L. McCall, S. D. Ogier, B. A. Brown, S. R. Rutter,
M. Palumbo, Y. U. Lee, L. A. Evans, T. J. Pease

FLX

Ctr. for Process Innovation, UK
Presented is the performance of novel organic semiconductor
formulations with charge mobility of ~4 cm2/Vs and on/off ratios of >108.
OTFTs for end-use applications, such as OLED display backplanes are
discussed. Material and device stability is demonstrated, in
combination with excellent standard deviation (<5%) across thesubstrate.

199

Wednesday

December 5

FLX2 - 3
14:50

Solution Processable Organic Semiconductor witha Wide Process Margin for TFT Devices
C. J. Newsome, K. Zalewski, J. H. Burroughes
Cambridge Display Tech., UK

We have developed a high mobility solution processable organic
semiconductor material for thin ﬁlm transistor applications that exhibits
low variance in device mobility with respect to the semiconductor ﬁlm
drying conditions. The material is stable to processing in air anddevices exhibit a mobility of more than 1 cm2V -1s-1.
FLX2 - 4:
15:10

Invited Gas Barrier Testing Methods of HigherBarrier Films for Flexible Electronics Devices
K. Nagai
Meiji Univ., Japan

This paper presents a method for testing the barrier property of water
vapor in higher-barrier ﬁlms used in ﬂexible electronics devices such asorganic light-emitting diodes and solar cells and a topic of its
international standardization.
----- Break ----15:50 - 17:25

Room A

FLX3: Flexible Oxide TFTs
Special Topics of Interest on Oxide TFT
Chair:
Co-Chair:M. Ito, Toppan Printing, JapanK. Uemura, Nippon Steel & Sumitomo Metal, Japan

FLX3 - 1:
15:50

Invited Development of Low Temperature SolutionProcessed Metal-Oxide TFT Materials
J. Steiger, D.-V. Pham, M. Marinkovic, A. Hoppe,
A. Neumann, A. Merkulov, R. Anselmann
Evonik Inds., Germany

We present recent developments at Evonik in regard to solution-based
processing techniques of metal oxides for TFT applications. Speciﬁc
tailored materials for different annealing temperatures aredemonstrated and include mobilities above 2 cm²/Vs at temperatures of
160 C, suitable for low cost ﬂexible substrates.

200

Wednesday
FLX3 - 2
16:15

December 5
Flexible AMOLED Display on Polyethylene
Napthalate (PEN) Foil with Metal-Oxide TFT
Backplane
A. K. Tripathi, B. van der Putten, J.-L. van der Steen,
K. Tempelaars, B. Cobb, M. Ameys*, T. H. Ke*, K. Myny*,
S. Steudel*, M. Nag*, S. Schols*, P. Vicca*, S. Smout*,
J. Genoe*, P. Heremans*, I. Yakimets, G. Gelinck
Holst Ctr./TNO, the Netherlands*imec, Belgium

We present a top emitting monochrome AMOLED display with 85 ppi
resolution using an amorphous Indium-Gallium-Zinc-Oxide (IGZO) TFT
backplane on PEN-foil. Maximum processing temperature was limited
to 150oC in order to ensure an overlay accuracy < 3 µm on PEN foil.
FLX3 - 3
16:35

Solution-Processed Low Temperature AmorphousThin Films
B. Singh, J. Jasieniak, C. D. Easton, L. Tozi, M. Bown
CSIRO Material Sci. & Eng., Australia

Oxidative treatment effectively reduces residual impurities in the thinﬁlms of metal oxide deposited via precursor route enabling reduced
temperature of processing. Non-halide based precursors were found to
be good candidate which shows that oxidative treatment signiﬁcantly
enhance the rate of bulk metal oxide formation resulting in high mobility
transistors.
FLX3 - 4L
16:55

High Performance Indium Zinc Oxide Thin-Film
Transistors Fabricated by Solution-Process at Low
Temperature
L. Lu*, Y. Osada*, Y. Kawamura*, T. Nishida*,
Y. Ishikawa*,**, Y. Uraoka*,***Nara Inst. of S&T, Japan**JST, Japan

FLX3 - 5L
17:10

Amorphous In-Ga-Zn-O Thin Film Transistors on
Ultra-High-Tg Polycarbonate Films
T. Negishi, Y. Ikeda, T. Daidou, T. Shiro, K. Ikeda*
Teijin, Japan*Teijin Chems., JapanAn ultra-high-Tg (264 C) polycarbonate (UHT-PC) ﬁlm is developed foruse in high temperature processes for fabricating plastic electronic
devices. This UHT-PC ﬁlm can be used as a substrate in electronic
devices that are annealed at temperatures over 200 C. Amorphous InGa-Zn-O TFTs on the UHT-PC ﬁlms are demonstrated.
Author Interviews and Demonstrations
17:30 – 18:30
201

FLX

Solution-processed InZnO thin ﬁlm transistors showed a high ﬁeld
effect mobility of 19.5 cm2/V·s at a low fabrication temperature of 300 C
by an aqueous solution. The on/off current ratio exceeded 109. Good
bias stability was also obtained by the passivation of Al2O3 thin ﬁlms.

Wed./Thu.

December 5/6
Thursday, December 6

9:00 - 9:55

Room E

FLX4: Materials and Evaluation for Flexible Devices
Chair:
Co-Chair:T. Furukawa, Yamagata Univ., Japan
T. Shiro, Teijin, Japan

FLX4 - 1
9:00

Display Aspect Computation Using Viewing Angle
Measurements: Application to the Flexible Displays
P. M. Boher, T. Leroux, T. Bignon, V. Collomb-Patton
ELDIM, France

Fourier optics viewing angle measurements are used to predict what
will be the practical performances of ﬂexible displays. The display
surface is rolled up around one axis of variable direction with a given
curvature and the apparent luminance, contrast and color of the display
surface is predicted for an observer.
FLX4 - 2L
9:25

Inspection Method of Hydrophilic Pattern on
Hydrophobic Resin for Printed Electronics
M. Mori, Y. Mizutani, K. Yamamoto, S. Izumida, H. Hirata
Toray Eng., Japan

A unique ﬂuorescence inspection method of using visible light has
been developed to make distinction between hydrophilic andhydrophobic areas. This enables us to rapidly and on noncontact basis
inspect micro hydrophilic pattern on hydrophobic resin, whichinspection has been unattainable by the wettability test withconventional contact angle meter.
FLX4 - 3L
9:40

Stretching-Assembled Nanowires for OrganicBased Thin Film Transistors
G.-W. Hsieh, K. Ogata*, K.-Y. Cheng, J.-Y. Wu,
W. I. Milne*Nat. Chiao Tung Univ., Taiwan*Univ. of Cambridge, UK

We demonstrate a stretched contact-printing technique to assemble
one-dimensional nanostructures with controlled density and orientation.
Over 90% nanowires are highly aligned along the primary stretchingdirection. Speciﬁcally, The hybrid inorganic-organic TFTs based on aparallel-aligned nanowire network and a semiconducting polymer
reveal a signiﬁcant positive enhancement in transistor performance andair-stability.
----- Break -----

202

Thursday

December 6

10:50 - 12:05

Room E

FLX5/FMC5: Flexible Materials and Fabrication Processes
Chair:
Co-Chair:Y. Mishima, FUJIFILM, Japan
A. Fujita, JNC, Japan

FLX5/
FMC5 - 1
10:50

Roll-to-Roll Deposition of ITO Film on a Flexible
Glass Substrate
Y. Ikari, H. Tamagaki
Kobe Steel, JapanThe roll-to-roll deposition of ITO ﬁlm on a ﬂexible glass roll, 50 µm thick,
300 mm wide and 10 m long, was made successfully by magnetron
sputtering at elevated substrate temperature. The ITO ﬁlm shows asheet resistance of 7.5 ΩSq at 190 nm, and the resistivity is calculated
as 143 µΩcm.
FLX5/
FMC5 - 2
11:10

Ultra Thin Glass for Flexible Display
C. C. Kuo, Y. C. Chen, B. S. Chiou, J. Y. Chiou, Y. T. Lee,Y. Y. Huang
Chunghwa Picture Tubes, Taiwan

Nowadays, glass is attractive as a substrate in ﬂexible electronic anddisplay. We have developed complete SH-to-SH type TFT backplane
process ﬂow. Moreover we have succeeded demonstrate a ﬂexible
EPD using 0.1 mm glass as TFT backplane substrate. In this paper, we
will describe fabrication procedures and realize in a 6-in. EPD module.
FLX5/
FMC5 - 3
11:30

Flexible LCD Fabricated with a Slit Coater
M. Kimura, K. Ohtsuka, Y. Nagataki, T. N. Oo, M. Mori*,
H. Hirata*, T. Akahane
Nagaoka Univ. of Tech., Japan*Toray Eng., Japan

FLX5/
FMC5 - 4L
11:50

Development of a Single Substrate Flexible LCD
Using Microencapsulation Technology
S.-H. Han, Y.-S. Kang, H.-G. Kim, S. S. G. Kang,
H.-H. Hwang
Image Lab, Korea

A Single substrate ﬂexible LCD is developed using Ch-LC
microencapsulation and printing method. Unlike conventional PIPS
method, combining LC microencapsulation with printing process
enabled us to dispense with an upper substrate, resulting in a much
simpliﬁed manufacturing of ﬂexible LCDs. Good electro-optic
performances and low reset voltage are achieved.
----- Lunch ----203

FLX

Homogeneously aligned liquid crystal layer on substrate ﬁlm on which
there is no necessity of forming alignment ﬁlm can be assembled by aslit coater. TN and IPS type ﬂexible LCDs were demonstrated. It is
expected that production time can be shortened several ten minutes
because of unnecessity of alignment ﬁlm.

Thursday

December 6

14:00 - 15:15

Room E

FLX6: Fabrication for Flexible Devices
Chair:
Co-Chair:H. Hirata, Toray Eng., JapanK. Akamatsu, Sony, Japan

FLX6 - 1:
14:00

Invited Printed Memory for Printed System
Electronics
J. Kasahara*,***Thin Film Elect., Norway**Hokkaido Univ., Japan

Re-writable non-volatile memory is successfully commercialized withroll-to-roll printing technology. Leveraging the experience in thepractical market, development on printed system electronics isunderway. Integration of memory with printed transistor and othercomponents like sensor will open up new market with printed
electronics.
FLX6 - 2
14:25

Self-Aligned Manufacturing Process of theElectrode and Bank Pattern for Flexible ChLC
PanelsP.-W. Liu, J.-P. Lu, K.-T. Chen, Y.-S. Tsai
ITRI, Taiwan

We propose a novel self-aligned manufacturing process for ﬂexible
cholesteric liquid crystal (ChLC) panels. We used photolithography orlaser etching to make the light-shielding layer on the back of plastic
substrates, then forming the ITO pattern and bank structures on theother side of the plastic substrate by self-aligned process.
FLX6 - 3L
14:45

Solution-Processed Organic Field Effect Transistors
from a Soluble Di-n-decyldinaphthothienothiophene
Precursor
A. Hamaguchi, Y. Ikeda, T. Daido, T. Shiro, M. Hamada*,
S. Shinamura*
Teijin, Japan*Nihon Kayaku, Japan

A soluble C10-DNTT precursor is developed for printed OFETs. The
precursor is annealed to produce C10-DNTT. XRD pattern of the ﬁlm
after annealing the precursor matched that of the vapor-deposited C10DNTT ﬁlm. OFETs using the precursor are fabricated on silicon andplastic substrates by drop-casting followed by thermal annealing.

204Thursday

December 6

FLX6 - 4L
15:00

Key Components for Flexible Display with
Integrated Gate Driver
C.-C. Chiu, M.-H. Lee, C.-T. Peng, W.-M. Huang
AU Optronics, Taiwan

We have demonstrated a high ﬂexibility electrophoretic display withgate driver circuits integrated on array process (GOA). By studying theessential components such as TFTs, resistors and capacitors, GOAembedded display can withstand 10,000 rolling cycles of 20 mm radius
without any line defect.
----- Break ----15:50 - 17:15

Room A

AMD8/FLX7: Oxide TFT: Flexible Displays
Special Topics of Interest on Oxide TFT
Chair:
Co-Chair:

C.-H. Cheng, AU Optronics, Taiwan
M. Kimura, Nagaoka Univ. of Tech., Japan

AMD8/
FLX7 - 1:
15:50

Invited Flexible AMOLED Displays Driven by a-IGZO
TFTs and their Applications
H. Yamaguchi, T. Ueda, K. Miura, N. Saito, S. Nakano,
T. Sakano, K. Sugi, I. Amemiya
Toshiba, Japan

Reliability of a-IGZO TFTs on plastics against bias-temperature stresshas been improved. We developed an 11.7-in. AMOLED display drivenby a-IGZO TFTs on plastics. Using the panel, we demonstrated a
prototype of ﬂexible-display system integrated with a bend-input
function that enables users to interact with the display by ﬂexing it.
AMD8/
FLX7 - 2:
16:15

Invited A 9.9-in. qHD Top-Emission Flexible OLED
Display Driven by Oxide TFTs

FLX

K. Teramoto, E. Fukumoto, T. Fukuda, K. Shimokawa,
T. Saito, T. Tanikawa, M. Suzuki, G. Izumi, M. Noda,
S. Kumon, T. Arai, T. Kamei, M. Kodate, S. No,
T. Sasaoka, K. Nomoto
Sony, Japan

We have developed a direct fabrication method of oxide TFTs on a
ﬂexible substrate. We have also developed a ﬂexible color ﬁlter array forwhite OLEDs. The oxide TFT is integrated on a ﬂexible substrate. The
fabricated display had a wide color gamut with over 100% NTSC in uʼvʼspace.

205

Thursday
AMD8/
FLX7 - 3
16:40

December 6
Flexible Top-Gate Amorphous InGaZnO TFTs on a
New Colorless Polyimide Substrate for Flexible
Display Applications
Y.-H. Yeh, C.-C. Cheng, M.-J. Yu, H.-C. Ku, B. C.-M. Lai,
B.-Y. Chou, E. Horii*, E. Kuribayashi*, T. Iwamoto*,
M. Yamazaki*, H. Inari*, K. Kurimoto*
ITRI, Taiwan*Kaneka, Japan

The ﬂexible top-gate a-IGZO TFTs array was fabricated on a Kanekaʼscolorless polyimide (PI) substrate at 200oC. Our proposed PI substrate
has high Tg (~350oC), high light transmittance (~87%), and low thermal
coefﬁcient (8 ppm/oC). Polymer resin (ILLUMIKA) was also applied topassivate the a-IGZO TFTs.
AMD8/
FLX7 - 4L
17:00

High-Performance Solution Processed Indium Oxide
Thin Film s Transistors
C. Avis, Y. G. Kim, H. R. Hwang, J. Jang
Kyung Hee Univ., Korea

We have developed a high performance solution processed indium
oxide TFT (InOx TFT). The spin-coated TFTs has saturation mobility,
Vth, and gate swing of 57.3 cm2/Vs, 0.4 V, and 149 mV/dec., respectively.
Inverters based on InOx TFTs were fabricated and showed a gain~27
at VDD=3 V.
Author Interviews and Demonstrations
17:30 – 18:30
Supporting Organizations:
Information Display Research Committee, ITE
Technical Committee on Electronic Information Displays, IEICESID Display Week 2013
May 19-24, 2013
Vancouver Convention Center
Vancouver, British Columbia, Canada

EuroDisplay 2013
September 16-19, 2013
Imperial College London
London, UK
206

TuesdayDecember 4Workshop on Touch Panels andInput Technologies
Tuesday, December 4
14:20 - 17:20

Event Hall

INPp - 1

INP

Poster INPp: Touch Panels & Input Technologies
Position Smoothing with Algorithm for Capacitive
Touch Panels
Y.-M. Chang, C.-S. Li, C.-L. Lin
Nat. Cheng Kung Univ., Taiwan
A fuzzy Kalman ﬁlter algorithm is proposed for applying in capacitive
touch panel that can provide smooth tracks thereby eliminating noiseand obtaining the accurate estimated position while touching. Based on
the simulation and experiment results, the proposed method can
reduce the unavoidable noise and provide a timely accurate position.
INPp - 2

Improvement of Detection Linearity on the
Capacitive Touch Panel Using Transient Electrical
Response
K. Kyoung, R. Hattori
Kyushu Univ., JapanA new capacitive sensing method using the difference of transient
response was proposed. In this method, the linearity of touch detection
on an electrode was improved by using two reference voltages inrelaxation oscillator circuits. We veriﬁed the improved circuits by SPICE
simulations and an evaluation kit.
INPp - 3

Withdrawn

INPp - 4

High Efficient Anti-Noise System for Embedded
Advanced Touch On-Cell Display
S.-Z. Peng, Y.-C. Li, C.-C. Chang, S.-H. Huang,
H.-H. Chen
Chunghwa Picture Tubes, Taiwan

Chunghwa Picture Tubes (CPT) has successfully solved the major
issue of interference from ToC display which showed the high SNR andwidely used at any image pattern. We have successfully developed in
ToC 3.5-in. with SDD type and ToC 4.3-in. with SDD in BAST (Brilliant
Advanced Super TFT) LCD.

207

Tuesday
INPp - 5

December 4
Discussion and Improvement of Signal to Noise
Ratio on Projected Capacitive Touch Screen
S. Yang, C.-W. Wu*, H. Wang, X. Dong
BOE Optoelect. Tech., China*BOE Tech. Group, China

In this paper, the signal to noise ratio (SNR) of projected capacitive(pro-cap) touch screen and pattern designs to affect the SNR are
discussed. Meanwhile, we simulate inﬂuence of the resistance andcapacitance on SNR. Results verify that Clothes Pattern is better than
Diamond Pattern on improvement of SNR.
INPp - 6

The Proposal for Improving the Image Quality of
LCD with Touch Panel for Outdoor Use
H. Ohtsuki, T. Imamura, S. Mori, T. Nakamura,
M. Hayashi*
Mitsubishi Elec., Japan*Melco Display Tech., Japan

The image quality of LCD with TP outdoors becomes worse because of
the washout. One of the factors is a diffuse reﬂection, additionally a
specular reﬂection inﬂuences washout. We compare the observation
results with the measurement results of the reﬂectances. We propose atarget value of the both reﬂectance.
INPp - 7

Force S ensor Touch Technology
H.-H. Liao, T.-Y. Chang, C.-H. Hsu, Y.-C. Fang, K.-W. Li,
C.-F. Hsu, W.-C. Wang
WINTEK, Taiwan

This paper proposes a structure of force sensor touch panel. It provides
users adopt conductive or non-conductive mediums as an input device.
We present a 4.3-in. TFT-LCD with this FST module. It has multi-touchfunction, and could accept non-conductive medium, such as glove, orinsulated pen, and so on.
INPp - 8

A Study of Performance Measurement of Digital
Imaging System
S.-Y. Tseng, Z.- W. Huang*, Z.-Z. Xue*, X.-H. Ma*,
Y.-C. Fang*, N.-W. Hsueh*Nat. Kaohsiung First Univ. of S&T, Taiwan*Kun Shan Univ., Taiwan

This study propose a new method for evaluation of digital Imaging
system, using the three sections of camera: transfer function of camera
lens, transfer function of CCD/CMOS, and ratio of signal to noise. We
try to deﬁne a new standard of performance evaluation of digital image
system.

208

Tue./Wed.

December 4/5

INPp - 9

Index Matching of ITO-PET Film and ITO Glass by
Organic Coating and Performance
S. J. Park, H. H. Kim, E. H. Kim, S. M. Lee, L. S. Park
Kyungpook Nat. Univ., Korea

Wednesday, December 5
10:50 - 12:25

Room E

INP1: Interaction
Chair:
Co-Chair:

M. Doi, Toshiba, JapanI. E. Yairi, Sophia Univ., Japan

INP1 - 1:
10:50

Invited Displaying Contents, Knowledge andExperiences
M. DoiToshiba, JapanThe fundamental function of display has not changed. Consumerʼs
lifestyle has changed. Consumers not only select and enjoy contents
but also get things and knowledge on displays via online shopping andso on. Displays have changed into sensor probes for consumers.
Consumersʼ experiences are shared on surrounding and wearing
displays.
INP1 - 2:
11:15

Invited Touch Panel Interaction for Visually Impaired
People : Toward the Universal Design of Interactive
Contents
I. E. Yairi
Sophia Univ., Japan

This paper introduces our research project about the universal
designed interactive contents for visually impaired peopleʼs touch panel
interaction. As an instance, we proposed “One Octave Scale Interface(abbr. OOSI) as the graphical representation. This paper reports theevaluation of shape recognition puzzle contents by visually impaired
people.

209

INP

The visibility of patterned ITO layer on ITO-PET ﬁlm or ITO glass is acumbersome process in fabrication of projective capacitive touch panel.
In this work we developed an index matching process utilizing organic
coating materials. The design, simulation and measurement of theindex matching process and performances are discussed.

Wednesday
INP1 - 3:
11:40

December 5

Invited Rapid Development of EAP Haptics Using a
Mobile Device Simulator
S. J. Biggs, R. N. Hitchcock, K. Kakinuma*
Artificial Muscle, USA*Bayer MaterialSci., JapanTo rapidly develop electroactive polymer (EAP) modules for gaming, amobile device simulator was used. The dynamics of candidate systems
were modeled, and the simulated “feel” was rated by users. The
approach supported development of a game-enhancing iPod casedriven by an EAP actuator for commercial use called “ViviTouch”.
INP1 - 4
12:05

A Hybrid Interaction for Touchable Flexible AMOLED
M.-Y. Lu, H.-Y. Chen, S.-P. Wang, S.-H. Wu, C.-C. Liang
ITRI, Taiwan

An improved user interface was proposed to increase the convenienceand interest in manipulating them, including simultaneously beating,multi-level bending, and bending connected with touching, where
sensors were integrated and designed into a ﬂexible 6-in. AMOLED.
The performance of the sensor-integrated AMOLED validated thedeveloped user interface.
----- Lunch ----14:00 - 15:10

Room E

INP2: Touch Panel (1)Chair:
Co-Chair:N. Nakatani, Touch Panel Labs., Japan
F. Soilihi, Nanomade Concept, France

INP2 - 1:
14:00

Invited New Technology Trends in Touch Panel
Sensing
K. Nakatani
Touch Panel Labs., JapanFor a large size touch panel, there are some material issues such as
high resistance of ITO ﬁlm and increase of wiring area. To solve theseissues, we developed new touch panels. It enables large size panel not
only to produce by the roll-to-roll method but also to make new
applications.
INP2 - 2
14:25

Design of a Projected-Capacitive Touch Controller
for Environment Noise Suppression
B. Li, T. Wei, X. Wei, S. Zhan
Northwestern Polytech. Univ., China

A strategy of sensing the voltage difference of the adjacent senseelectrodes with two complementary drive pulses is proposed for
projected-capacitive touch controller. To verify the strategy, a prototype
chip is designed and tested. The test results indicate the proposed
sensing strategy is efﬁcient for environment noise suppression.
210

Wednesday
INP2 - 3:
14:45

December 5

Invited Flexible Touch Panel Based on Nanoparticle
Strain Gauges
F. Soilihi, N. Decorde, L. Ressier*, B. Viallet*
Nanomade Concept, France*Univ. de Toulouse, France----- Break ----15:50 - 17:20

Room E

INP3/AMD6: Touch Panel (2)Chair:
Co-Chair:T. Nakamura, Japan Display Central, Japan
H. Katoh, Sharp, Japan

INP3/
AMD6 - 1:
15:50

Invited Newly Developed In-Cell Capacitive Touch
Panel Technology in a Wide Viewing Angle IPS-Mode
Display
K. Noguchi, Y. Kida, K. Ishizaki, K. Azumi, H. Mizuhasi
Japan Display West, Japan

This paper is a presentation of a 4.0-in. qHD (960 540) IPS-mode
LTPS display with a newly developed In-cell mutual capacitive touchtechnology. The panel has higher touch scanning speed of 120 Hz andnewly developed touch scanning circuit for narrow dead band on a LCD
glass.
INP3/
AMD6 - 2
16:15

A Novel Design of Capacitive In-Cell Touch Sensor
Circuit Using a-Si TFT
C.-T. Hsieh, S.-K. Hsu
Chimei-Innolux, Taiwan

This paper proposes an In-cell touch sensor circuit with the thresholdvoltage compensated method for active matrix displays by using thea-Si TFT. According to the simulation results, the novel touch sensor
circuit is effectively against the variation of threshold voltage andimproved the reliability of in-cell touch sensor circuit.
INP3/
AMD6 - 3:
16:35

Invited In-Cell Projected Capacitive Touch Panel
Technology
Y. Sugita, K. Kida, S. Yamagishi
Sharp, JapanWe describe an In-Cell Projected Capacitive Touch Panel in a display
using IGZO TFT technology. The prototype demonstrates high signalto-noise ratio (SNR) and pen input operation. The possibility ofenlarging the display size beyond current limits makes this a highly
promising approach for In-Cell Capacitive touch panels.
211

INP

We introduce an innovative patented multi-touch force sensing
technology destined to ﬂexible displays. Relying on nanoparticle-based
strain gauges, this low-cost technology offers a unique set of features(full ﬂexibility, multipoint force sensing and bend sensitivity), which
offers ways of interacting with a display.

Wed./Thu.

December 5/6
Active Photo-Sensing Array of Thin Film Transistor
with Threshold Voltage C ompensation

INP3/
AMD6 - 4
17:00

L.-S. Chou, H. M. Chen, B.-C. Chen, J.-Y. Zhang,
Y.-H. Tai, I. Chan*, M.-H. Yeh*Nat. Chiao Tung Univ., Taiwan*ITRI, Taiwan

In this paper, an active photo-sensing ampliﬁer pixel circuit withcompensation function of device variation is proposed, which has highaperture ratio since only 3 TFTs are used. The compensation functionof the circuit obviously improves the sensing error resulted from device
variation from 80% to 6%.
Author Interviews and Demonstrations
17:30 – 18:30

Thursday, December 6
9:00 - 10:10

Room C-1

INP4: 3D/2D Imaging Systems (1)Chair:
Co-Chair:

H. Watanabe, Panasonic, JapanK. Kagawa, Shizuoka Univ., Japan

INP4 - 1:
9:00

Invited A 1.5 Mpixel RGBZ CMOS Image Sensor for
User Interface and 3D Image Capture
W. Kim, J. Yun, S.-H. Lee, Y. Wang*, I. Ovsiannikov*,Y. Park, C. Chung
Samsung Elect., Korea*Samsung Semiconductor, USA

A 1.5 Mpixel RGBZ image sensor to capture color (RGB) and depth (Z)at the same time is presented. Time-Of-Flight (TOF) method is used for
depth. Color pixels and depth pixels are placed together in pixel arraywith specially designed RGBZ pattern. It demonstrates excellent depth
performance and full color image.
INP4 - 2:
9:25

Invited Evolution of Eyes and Image Sensors
H. Watanabe
Panasonic, JapanThe evolution of the eye and image sensors was overviewed. The
possible disadvantage of the inverted structures of human eyes and
FSI image sensors was solved with the use of the lightpipe function. A
novel “SmartFSI” image sensor with stacked lightpipe structure
demonstrated a high performance.

212Thursday

December 6

INP4 - 3
9:50

Low Noise Readout Circuits Interface Using a
Capacitive-Feedback Frontend Amplifier for High
Output Impedance Sensors
K. Mars, S. Kawahito
Shizuoka Univ., Japan----- Break ----10:50 - 12:20

Room C-1

INP5: 3D/2D Imaging Systems (2)Chair:
Co-Chair:J. D. K. Kim, Samsung Advanced Inst. of Tech., Korea
C.-C. Hsieh, Nat. Tsing Hua Univ., Taiwan

INP5 - 1:
10:50

Invited A Full-HD CMOS Image Sensor with TimeMultiplexed 2D/3D Image Acquisition
S.-J. Kim, J. Shin, J. D. K. Kim, B. Kang, K. Lee
Samsung Advanced Inst. of Tech., Korea

We present a 1920x1080 pixel array to provide high-resolution 2D color
images and high-accuracy 3D depth maps in a time-multiplexedmanner. The prototype chip demonstrates the demodulation of 20 MHz
time-of-ﬂight signal with the contrast of 52.8%, achieving less than 38mm depth error between the distance of 0.75 m and 4.5 m.
INP5 - 2:
11:15

Invited An Ultra-Low Voltage CMOS Imager with
Novel Pulse-Width-Modulation Readout
C.-C. Hsieh, M.-T. Chung
Nat. Tsing Hua Univ., Taiwan

A 0.5 V PWM CMOS Imager chip with threshold variation cancellingand programmable threshold control scheme was implemented. It
achieves 0.055% pixel FPN, 0.65 LSBrms random noise at dark, and82 dB dynamic range at 11.8 fps. The chip consumes 4.95 µW at 11.8 fps;
results in a iFOM as 163.9 pW/f-p.
INP5 - 3
11:40

Discussing Pixel Circuits for Hybrid Sensor and
Display Pixel Arrays
N. Papadopoulos, M. Yang, M. Esmaeili-Rad,
M. Sachdev, W. S. Wong
Univ. of Waterloo, Canada

The hybrid sensor and display pixel proposed consists of: light sensor
and integrated display onto the backplane. Phototransistors
incorporating both sensing and switching on the same device wasused. The backplane was implemented using a driving TFT and an
OLED. The grey scale is generated by pulse-height and width voltage
modulation.
213

INP

In this paper a low-noise high-gain readout circuit interface for highoutput impedance sensors is presented. Theoretical noise analysis
and simulation results shows that by using a high-gain switchedcapacitor ampliﬁer, the thermal noise is greatly reduced if the dominant
reset noise component at the charge summing node is canceled.

Thursday

December 6

INP5 - 4
12:00

Color Image Reconstruction from a Depth-AwareLCD Display Based on Coded Aperture Imaging
S. Suh, C. Choi, D. Park, C. Kim
Samsung Advanced Inst. of Tech., Korea

This paper describes a novel color image reconstruction method basedon coded aperture imaging. By sequentially displaying invisible coded
aperture patterns in each LCD sub-pixel of red, green and blue colors,
color multi-view images are reconstructed by decoding coded images
in each color primary.
----- Lunch ----15:50 - 17:35

Room B-1

INP6: AR Interactive Systems
Special Topics of Interest on Augmented Reality
Chair:
Co-Chair:

H. Iseki, Tokyo Women’s Medical Univ., Japan
N. Hashimoto, Citizen Holdings, Japan

INP6 - 1:
15:50

Invited SCOT (Smart Cyber Operating Theater)
Project: Advanced Medical Information Analyzer for
Guidance of the Surgical Procedures
H. Iseki, Y. Muragaki, M. Tamura, T. Suzuki,
K. Yoshimitsu, S. Ikuta, J. Okamoto, M. Chernov,
K. Izumi*
Tokyo Women’s Medical Univ., Japan*Univ. of Tokyo, Japan

Computer-assisted advanced medical information analyzer is based on
the constant monitoring, recording, co-registration and archiving of thevarious data. The system permits fast extraction of the required
parameters from the database and signiﬁcantly facilitates evaluation of
the clinical procedures, which may result in signiﬁcant increase of theirsafety and reliability.
INP6 - 2
16:15

Laser Projection UI Robot System and Its
Applications
M. Ide, Y. Abe, T. Komiyama, S. Fukaya, T. Tamura,
K. Arakawa, T. Nozaki
Citizen Holdings, Japan

We present a novel pan-tilt projection UI robot system using a laser
light source with a MEMS scanner in combination with a hand tracking
sensor. The UI robot system can detect and track a hand and thenproject a virtual remote controller (VRC) image onto the top of a palm.

214Thursday

December 6

INP6 - 3L:
16:35

Invited Real-Time Rendering Method of Virtual
Liquid in Mixed Reality Environment with Automatic
Generation of Sound Effect
M. Imura, Y. Kuroda, O. Oshiro
Osaka Univ., Japan

INP6 - 4L:
16:55

Invited Synchronized Visualization of Bone Cutting
to Support Microendoscopic Discectomy
M. Nakao, K. Imanishi*, M. Kioka**, M. Yoshida**,K. Minato***, T. Matsuda
Kyoto Univ., Japan*e-Growth, Japan**Wakayama Medical Univ., Japan***Nara Inst. of S&T, Japan

This presentation introduces a new concept of augmented reality (AR)assisted bone cutting to support Microendoscopic Discectomy. The
designed system dynamically updates volume rendered images ofpatientʼs CT data while synchronizing with intraoperative cutting
procedures, and contributes to precise and rapid cutting as well as
reducing perceptual difﬁculties in microendoscopic operation.
INP6 - 5L:
17:15

Invited Contents-Rich Display for Medical Diagnostic
and Surgical Aid
K. MoriNagoya Univ., Japan

This paper presents recent advances of medical image processing
techniques utilized in diagnostic and surgical assistance from theviewpoint of human anatomy exploration and its display. Interactive
rendering of human anatomical structures is now widely utilized in theclinical ﬁled. This presentation demonstrates contents-rich display
based on medical image recognition.
Author Interviews and Demonstrations
17:30 – 18:30
Supporting Organizations:
Human Interface Society
Information Sensing Research Committee, ITE

215

INP

We propose a real-time rendering method of virtual liquids in mixed
reality environment and an automatic generation method of soundeffect of liquids based on a computational ﬂuid dynamics simulation.
Two cameras are adopted for capturing the images of real environment
for appropriate rendering of transparent liquids.

IDW/AD ’12 COMMITTEESORGANIZING COMMITTEE

General Chair:
General Vice-Chair:Representative (ITE):

Representative (SID):
Standing:

Auditor:N. Ibaraki
K. Betsui
S. Takamura
H. Fujikake
K. Kondo
Y. Iimura
R. Hattori
T. Komaki
S. Mikoshiba
S. Naemura
H. Okumura
M. Omodani
Y. Shimodaira
Y. Yamamoto
H. Sakurai

AIST
HitachiNTT
Tohoku Univ.
Sharp
Tokyo Univ. of A&T
Kyushu Univ.
Panasonic
Univ. of Electro-Commun.
Tottori Univ.
Toshiba
Tokai Univ.
Shizuoka Univ.
Sharp
Asahi GlassOVERSEAS ADVISORS
Overseas Advisor:

M. Anandan
Organic Lighting Technologies LLC, USA
J. Chen
ITRI, Taiwan
N. Fruehauf
Univ. Stuttgart, Germany
M.-K. Han
Seoul Nat. Univ., Korea
I. Heynderickx Philips Res., the Netherlands
J. Jang
Kyung Hee Univ., Korea
Hong Kong Univ. of S&T, Hong Kong
H.-S. Kwok
F.-C. Luo
AU Optronics, Taiwan
J.-N. Perbet
Thales Avionics, France
K. R. Sarma
Honeywell Int., USA
Nat. Chiao Tung Univ., Taiwan
H.-P. D. Shieh
D. Theis
Tech. Univ. Munich, Germany
L. F. Weber
Consultant, USA

EXECUTIVE COMMITTEE

Executive Chair:
Executive Vice-Chair:

H. Okumura
K. Azuma
T. Shiga
Program Chair:
M. Omodani
Program Vice-Chair:
M. DateY. Gotoh
K. Ishikawa
Program Secretary:
Y. Kijima
H. Kikuchi
H. Kominami
S. Maeda
T. Matsumoto
T. Miyashita
Y. NakaiM. Shinohara
K. Takatori
Publication Chair:T. Shiga
Publication Vice-Chair: K. Ishii
S. Komura
Publication:
H. Kawamura
Y. Masuda
Local Arrangement Chair: T. Komaki
216

Toshiba
Shimadzu
Univ. of Electro-Commun.
Tokai Univ.
NTT
Kyoto Univ.
Tokyo Inst. of Tech.
Sony
NHK
Shizuoka Univ.
Tokai Univ.
Sony
Tohoku Inst. of Tech.
ToshibaOmron
NLT Techs.
Univ. of Electro-Commun.
NHK
Japan Display
NTT
Bridgestone
Panasonic

Local Arrangement Vice-Chair: H. Kato
Local Arrangement:
I. Fujieda
Y. Gotoh
Exhibition Chair:
H. Sakurai
Exhibition Vice-Chair:
N. Hashimoto
Financial Supporting Chair: H. Sakurai
Financial Supporting Vice-Chair: H. Okumura
Treasurer:
T. Numao
Vice Treasurer:
K. Takatori
General Secretary:
A. Honma
T. Katoh
Senior Members:
K. Betsui
M. Kimura
Members:
H. Arai
M. Inoue
M. Inoue
H. Ishii
H. Kanayama
S. Kaneko
S. Koike
S. Kojima
H. Kuma
K. Matsuhiro
Y. Nishimura
S. Okabayashi
A. Sasaki
T. Shinoda
T. Sugiura
K. Suzuki
H. Takanashi
K. Takeuchi
Y. Toko
M. Tsumura
T. Uchida
M. Uchidoi
H. Uchiike
T. Yamada
Y. Yanagi
Y. YodaH. Yokoyama
M. Yuki

WORKSHOP CHAIR

LCT
AMD
FMC
PDP
PH
FED
OLED
3D
VHF
PRJ
EP
MEET
DES
FLX
INP

H. Okada
K. Azuma
T. Miyashita
H. Kajiyama
Y. Nakanishi
M. Takai
S. Naka
S. YanoT. Kurita
H. Kanayama
H. Arisawa
M. Nakamoto
T. Fujine
H. Fujikake
I. Fujieda

Sharp
Ritsumeikan Univ.
Kyoto Univ.
Asahi Glass
Citizen Holdings
Asahi Glass
ToshibaSharp
NLT Techs.
ZEON
ZEON
Hitachi
Ryukoku Univ.
FPD NetApple
Chimei Innolux
Sharp
Panasonic
NLT Techs.
Seiko Epson
Kyocera Display
Idemitsu Kosan
Asuna
AKT
Meijyo Univ.
Kyoto Univ.
Shinoda Plasma
IDM
Toshiba Research Consulting
Sony
DIC
Stanley Elec.
HitachiSendai Nat. College of Tech.
Sichuan COC Display Device
Saga Univ.
Sumitomo Chem.
Lumiotec
Otsuka Elec.
Kent State Univ.
Asahi Glass
Univ. of Toyama
Shimadzu
Tohoku Inst. of Tech.
Tokushima Bunri Univ.
Shizuoka Univ.
Osaka Univ.
Univ. of Toyama
Shimane Univ.
NICT
Panasonic
Fuji Xerox
Shizuoka Univ.
Sharp
Tohoku Univ.
Ritsumeikan Univ.
217

PROGRAM COMMITTEE

Program Chair:
Program Vice-Chair:
Program Secretary:

Committee:
LCT
AMD
FMC
PDP
PH
FED
OLED
3D
VHF
PRJ
EP
MEET
DES
FLX
INP

M. Omodani
M. DateY. Gotoh
K. Ishikawa
Y. Kijima
H. Kikuchi
H. Kominami
S. Maeda
T. Matsumoto
T. Miyashita
Y. NakaiM. Shinohara
K. Takatori

Tokai Univ.
NTT
Kyoto Univ.
Tokyo Inst. of Tech.
Sony
NHK
Shizuoka Univ.
Tokai Univ.
Sony
Tohoku Inst. of Tech.
ToshibaOmron
NLT Techs.

T. Ishinabe
Y. Fujisaki
R. Yamaguchi
R. Murai
N. Miura
H. Mimura
T. Wakimoto
M. Tsuchida
K. Masaoka
T. Hayashi
T. Fujisawa
Y. NakaiT. Yamamoto
M. Itoh
K. Nakatani

Tohoku Univ.
NHK
Akita Univ.
Panasonic
Meiji Univ.
Shizuoka Univ.
Merck
NTT
NHK
3M
DIC
ToshibaNHK
Toppan Printing
Touchpanel Labs.

Workshop on LC Science and Technologies

Workshop Chair:
Program Chair:
Program Vice-Chair:

General Secretary:
Program Committee:

H. Okada
T. Ishinabe
S. Komura
M. Suzuki
M. Inoue
M. Funahashi
K. Hatsusaka
I. Hirosawa
S. Ishihara
K. Ishikawa
A. Kubono
K. Miyachi
M. Nishikawa
T. NoseS. OkaM. OzakiS. Shibahara
T. Takahashi
H. Wakemoto
T. Yamaguchi

Workshop on Active Matrix Displays

Workshop Chair:
Program Chair:
Program Vice-Chair:
General Secretary:
Program Committee:
218

K. Azuma
Y. Fujisaki
K. Takatori
N. Morosawa
A. C. Arias

Univ. of Toyama
Tohoku Univ.
Japan Display
Merck
Apple
Kagawa Univ.
DIC
JASRI
Osaka Inst. of Tech.
Tokyo Inst. of Tech.
Shizuoka Univ.
Sharp
JSR
Akita Pref. Univ.
Japan Display
Osaka Univ.
Sony
Kogakuin Univ.
Japan DisplayJNC Petrochem.
ShimadzuNHK
NLT Techs.
Sony
Univ. of California, Berkeley

E. Fortunato
H. Hamada
M. Hiramatsu
S. Horita
M. Inoue
H. J. Kim
M. Kimura
H. Kumomi
T. Noguchi
K. Nomoto
K. Suga
Y.-H. Yeh

New Univ. of Lisbon
Panasonic
Japan Display
JAIST
Chimei Innolux
Yonsei Univ.
Ryukoku Univ.
Tokyo Inst. of Tech.
Univ. of the Ryukyus
Sony
Sharp
ITRI

Workshop on FPD Manufacturing, Materials and Components

Workshop Chair:
Program Chair:
Program Vice-Chair:
General Secretary:
Program Committee:

T. Miyashita
R. Yamaguchi
M. Shinohara
T. Tomono
T. Arikado
K. Dantani
A. Fujita
T. Hotta
Y. Iimura
K. Käläntär
T. Katoh
C.-C. Lee
M. Miyatake
N. Miyatake
Y. Mizushima
Y. Murata
K. Niwa
T. Nonaka
Y. Saitoh
H. Sakurai
S. Takahashi
T. Takeda
Y. UkaiT. Unate
T. Yanagimoto
Y. Yang

Workshop on Plasma Displays

Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

H. Kajiyama
R. Murai
T. Shiga
K. Ishii
S. Mikoshiba
T. Nagatomi
Y. Nakao
T. Shinoda
M. Uchidoi

Tohoku Inst. of Tech.
Akita Univ.
Omron
Toppan Printing
Tokyo Electron
ATMI JapanJNC Petrochem.
DNP
Tokyo Univ. of A&T
Global Optical Solutions
ZEON
ITRI
Nitto Denko
Mitsui Eng. Shipbuilding
Corning Holding Japan
ULVAC
JSR
AZ Elec. Materials
FUJIFILM
Asahi GlassNOF
NagaseUDDI
UNATE
Nippon Steel & Sumikin Chem.
Japan Display
Tokushima Bunri Univ.
Panasonic
Univ. of Electro-Commun.
NHK
Univ. of Electro-Commun.
Osaka Univ.
Asahi Glass
Shinoda Plasma
Sichuan COC Display Device

Workshop on EL Displays and Phosphors

Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

Y. Nakanishi
N. Miura
N. Matsuda
K. Hara
T. Hisamune
S. ItohShizuoka Univ.
Meiji Univ.
Toshiba
Shizuoka Univ.
Mitsubishi Chem.
Futaba219

D. Jeon
M. Katayama
H. Kobayashi
T. Kusunoki
T. Miyata
M. Niboshi
K. Ohmi
D. Poelman
M. Shiiki
M. Sumitomo
K. Wani
R. XieA. Yamamoto

KAIST
Denso
Tottori Univ.
Dexerials
Kanazawa Inst. of Tech.
Sharp
Tottori Univ.
Ghent Univ.
HitachiNichia Chem. Ind.
TAZMO
NIMS
Tokyo Univ. of Tech.

Workshop on Field Emission Display and CRT

Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

M. Takai
H. Mimura
M. Namba
T. Asano
Y. Gotoh
J. Ishikawa
K. Koga
M. Nagao
M. Nakamoto
S. Okuda

Osaka Univ.
Shizuoka Univ.
NHK-ES
Kyusyu Univ.
Kyoto Univ.
Chubu Univ.
Panasonic Healthcare
AIST
Shizuoka Univ.
Okuda Ind.

Workshop on OLED Displays and Related Technologies

Workshop Chair:
Program Chair:
Program Vice-Chair:
General Secretary:
Vice-Secretary:
Program Committee:

S. Naka
T. Wakimoto
K. Monzen
N. TakadaT. Ikuta
C. Adachi
S. Aratani
S. Enomoto
Y. Fujita
T. Fukuda
R. Hattori
T. Inoue
Y. Kijima
T. Komatsu
H. Kuma
A. Mikami
H. Miyazaki
H. Murata
K. Nakayama
Y. SatoT. Shimizu
S. Tokito
T. Tsuji
T. Uchida

Univ. of Toyama
Merck
Nissan Chem. Inds.
AIST
JNC Petrochem.
Kyushu Univ.
HitachiToshiba
Sharp
Saitama Univ.
Kyushu Univ.
TDK
Sony
Panasonic
Idemitsu Kosan
Kanazawa Inst. of Tech.
Kyushu Univ.
JAIST
Yamagata Univ.
Mitsubishi Chem.
NHK
Yamagata Univ.
PioneerTokyo Polytechnic Univ.

Workshop on 3D/Hyper-Realistic Displays and Systems

Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

220

S. YanoM. Tsuchida
K. Yamamoto
T. Fujii
T. Koike
T. Mishina

Shimane Univ.
NTT
NICT
Nagoya Univ.
HitachiNHK

S. Ohtsuka
J.-Y. Son
C.-H. Tsai
M. Tsuboi
H. Yamamoto

Kagoshima Univ.
Konyang Univ.
ITRI
NTT DoCoMo
Univ. of Tokushima

Workshop on Applied Vision and Human Factors

Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

T. Kurita
K. Masaoka
T. Matsumoto
J. Bergquist
S. Clippingdale
N. Hiruma
M. Idesawa
H. IsonoA. Morishita
K. Sakamoto
Y. Shimodaira
J. Someya
T. TamuraA. Yoshida
R. Yoshitake

NHK
NHK
Sony
Nokia
NHK
NHK
Univ. of Electro-Commun.
Tokyo Denki Univ.
Toshiba
Panasonic
Shizuoka Univ.
Mitsubishi Elec.
Tokyo Polytech. Univ
Sharp
IBM Japan

Workshop on Projection and Large-Area Displays and Their
Components

Workshop Chair:
Program Chair:
Program Vice-Chair:

General Secretary:
Program Committee:

H. Kanayama
T. Hayashi
J. Park
S. Shikama
T. Suzuki
O. Akimoto
Y. Asakura
H. Kikuchi
S. Koike
H. NakanoT. Ogura
K. Ohara
S. OuchiM. SakaiH. Sugiura
Z. Tajima
M. Takaso
K. Takeda

Workshop on Electronic Paper

Workshop Chair:
Program Chair:
Program Vice-Chair:
General Secretary:
Program Committee:

H. Arisawa
T. Fujisawa
N. Kobayashi
Y. Toko
M. Higuchi
Y. Hotta
T. Kitamura
S. Maeda
Y. Masuda
M. Omodani
N.-S. Roh
A. Suzuki
M. Tsuchiya
G. Zhou

Panasonic
3M
AIST
Setsunan Univ.
JVC KENWOOD
Sony
Nittoh Kogaku
NHK
Seiko Epson
Barco
Shincron
Texas Instr. Japan
Hitachi
Ushio
Mitsubishi Elec.
Mobara Atecs
Techno Sys. Res.

Fuji Xerox
DIC
Chiba Univ.
Stanley Elec.
NIMS
Ricoh
Chiba Univ.
Tokai Univ.
Bridgestone
Tokai Univ.
Samsung Display
Chiba Univ.
E-ink
Philips Res.
221

Workshop on MEMS and Emerging Technologies for Future
Displays and Devices

Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

M. Nakamoto
Y. NakaiT. Komoda
T. Akinwande
G. Barbastathis
M. Esashi
H. Fujita
J. Jang
H. Kikuchi
J. Kim
K. Matsumoto
W. Milne
T. Ooasa
S. Sugiyama
H. Tuller
S. Uchikoga
J.-B. Yoon
Y. Yoshida

Shizuoka Univ.
Toshiba
Panasonic
MIT
MIT
Tohoku Univ.
Univ. of Tokyo
Kyung Hee Univ.
NHK
Univ. of Oxford
Olympus
Univ. of Cambridge
Tokyo Electron
Ritsumeikan Univ.
MIT
Toshiba
KAIST
BEANS Lab.

Workshop on Display Electronic Systems

Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

T. Fujine
T. Yamamoto
S. Takamura
K. Kagawa
K. Käläntär
L. Kerofsky
T. Kim
H.-S. Koo
O.-K. Kwon
K. Makita
K. Morita
A. Nagase
H. Nitta
H. Okumura
S. OnoA. Sakaigawa
H. Sasaki
K. Sekiya

Workshop on Flexible Displays

Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

222

H. Fujikake
M. ItoT. Shiro
K. Akamatsu
M. Funahashi
T. Furukawa
H. Hirata
T. KamataM. Kimura
H. Maeda
Y. Masuda
Y. Mishima
T. Sekitani
K. Takimiya
T. Tomono
K. Uemura

Sharp
NHK
NTT
Shizuoka Univ.
Global Optical Solutions
Sharp Lab. of America
Apple
Ming-Hsing Univ. of S&T
Hanyang Univ.
AIST
National Traffic Safety and Environment Lab.
Mitsubishi Elec.
HitachiToshiba
Panasonic
Japan Display
Toshiba Semiconductor & Storage Prod.

Tohoku Univ.
Toppan Printing
TeijinSony
Kagawa Univ.
Yamagata Univ.
Toray Eng.
AIST
Nagaoka Univ. of Tech.
DNP
Bridgestone
FUJIFILM
Univ. of Tokyo
Hiroshima Univ.
Toppan Printing
Nippon Steel & Sumitomo Metal

Workshop on Touch Panels and Input Technologies

Workshop Chair:
Program Committee:
General Secretary:
Program Committee:

I. Fujieda
K. Nakatani
I. Mihara
H. Haga
N. Hashimoto
K. KagawaH. KatoY. Mizushima
T. Nakamura
Y. Nakatani
H. Noma
H. Okumura
Y. Sasaki
K. Takatori

Ritsumeikan Univ.
Touchpanel Labs.
ToshibaNLT Techs.
Citizen Holdings
Shizuoka Univ.
Sharp
Corning Holding Japan
Japan Display
Ritsumeikan Univ.
ATR Intelligent Robotics and Commu. Labs.
Toshiba
Mitsubishi Elec.
NLT Techs.

Special Topics of Interest on Oxide TFT

Facilitator:
Program Committee:
AMD:
FMC:
OLED:
EP:
FLX:

K. Takatori

NLT Techs.

H. Kumomi
R. Yamaguchi
T. Uchida
Y. TokoT. Sekitani

Tokyo Inst. of Tech.
Akita Univ.
Tokyo Polytechnic Univ.
Stanley Elec.
Univ. of Tokyo

Special Topics of Interest on Augmented Reality

Facilitator:
Program Committee:
3D:
VHF:
DES:
INP:

M. DateNTT

M. Tsuchida
T. Matsumoto
K. Makita
I. Mihara

NTT
Sony
AIST
ToshibaSpecial Topics of Interest on Lighting Technologies

Facilitator:
Program Committee:
FMC:
PH:
OLED:
PRJ:

Y. KijimaSony

M. Shinohara
K. HaraT. Ikuta
M. Sakai

Omron
Shizuoka Univ.
JNC Petrochem.
Ushio

FINANCIAL SUPPORTING ORGANIZATIONS (as of October 30, 2012)
ADEKA Corporation
Applied Materials Inc.
ASAHI GLASS CO., LTD.
Corning Holding Japan G.K. Corning Technology Center
Dai Nippon Printing Co., Ltd.
JNC CORPORATIONJSR Corporation
Nichia Corporation
Semiconductor Energy Laboratory Co., Ltd.
SHARP CORPORATIONTOKYO ELECTRON LIMITEDUbe Material Industries, Ltd.

SUPPORTING MEMBERS (as of October 30, 2012)
Eizo Nanao Corporation
Merck Ltd. JapanNHK (JAPAN BROADCASTING CORPORATION)NLT Technologies, Ltd.

223

SHIMADZU CORPORATION
Toshiba Corporation
ULVAC, Inc.
ZEON CORPORATIONCOMPANIES LIST OF EXHIBITORS (as of October 30, 2012)
Fraunhofer COMEDDGrand Seiko Co., Ltd.
KEISOKU GIKEN Co., Ltd.
Konica Minolta Optics, INC.
PTT Company Limited
Shintech, Inc.
SILVACO Japan, Ltd.
TOYO Corporation
Wexx Co., Ltd

1F

Posters /and D

UNIVERSITIES LIST OF EXHIBITORS (as of October 30, 2012)

S
E

Fujieda and Hanasaki Lab., Ritsumeikan Univ.
Graduate School of Eng. Sci., Osaka Univ.
Hideo Saito Lab., Keio Univ.
Hirose-Tanikawa Lab., the Univ. of Tokyo
Kyushu Univ.
Maeda Lab., Tokai Univ.
Mutsu and Matsu Lab./Ryukoku Extension Ctr., Ryukoku Univ.
Nagaoka Univ. of Tech.
Nakamoto Lab., Shizuoka Univ.
Nara Inst. of S&T
Omodani Lab., Tokai Univ.
Reality Media Lab. and Mobile Computing Lab., Ritsumeikan Univ.
Suyama and Yamamoto Lab., the Univ. of Tokushima
Takemura Lab. Cybermedia Ctr., Osaka Univ.
Univ. of Hyogo
Univ. of the Ryukyus
Univ. of Toyama
Univ. of Tsukuba

IDW ’13The 20th International Display Workshops
December 4-6, 2013
Sapporo Convention Center
Sapporo, Japan
http://www.idw.ne.jp
224

2F

FLOOR MAP
Special Exhibition
Dome Theater

1F

N
Elevator
Lavatory

Rest Area
Posters / Author Interviews
and Demonstrations

Event Hall

Exhibition

SubwayExit 4-2

2F, Restaurant“The Café Terrace”

RoomD

Secretariat

Registration
Desk

Reception

Room
E

Speaker Preparation Room

SakuraRoom RoomG
H

Main Entrance
Restaurant
The Grill

Evening Get Together

Cloak
South
Entrance

Main Lounge

Main Hall

CocktailLoungeGift ShopBusiness Center

Room Room
C-1 C-2

to Garden

Keynote Addresses
アネックスホール
Annex Hall

Swan

Tea Ceremony House

Hosho-an

Restaurant
The Snack

2F

4F
Room
Room
A

Room
B-2

Room
B-1

225

MEMO

226

Room C-1

Room C-2

Room D

Room E

Room A

Room B-1

1F
Room B-2

Evening Get-Together at Restaurant “The Grill” (1F) 18:00-20:00

Lunch

Registration
8:00-18:00

VHF1
14:20-15:50

DES1
14:15-15:55

EP1
14:20-15:55

AMD1
14:20-15:45

FMC1
14:20-15:35

3D1
14:20-15:50
LCTp, INPp
14:20-17:20

Break
DES2/VHF2
16:10-17:30

EP2
16:10-17:20

FLX1/AMD2
16:10-17:35

FMC2
16:10-17:30

3D2
16:10-17:50

LCT1
9:00-10:20

AMD3
9:00-10:30

3D3/VHF3
9:00-10:20

EP3
9:00-10:05

AMD4
10:50-12:20

3D4/VHF4
10:50-12:05†

EP4/EPp
10:50-12:20

AMD5
14:00-15:25

FLX2
14:00-15:35

FMC3
14:00-15:00

FLX3
15:50-17:25

VHF5/3D5
15:50-17:10

FMC4
15:50-17:10

FMCp, FLXp
9:20-12:20

Wednesday, December 5

Break
†

DES4/DESp
10:50-11:40

LCT2
10:50-12:10

Registration
8:00-18:00

INP1
10:50-12:25
Lunch

LCT3
14:00-15:25

INP2
14:00-15:10
Break

LCT4
15:50-17:10

INP3/AMD6
15:50-17:20

Exhibition
10:00-18:00

AMD4:
Oxide TFT:
Applications
10:50-12:20

PDPp, EPp,
DESp
14:00-17:00

FLX4
9:00-9:55

OLED1
9:00-10:00

VHF6
9:00-10:30

PRJ1
9:00-10:35
AMDp
9:20-12:20

Thursday, December 6

Break
INP5
10:50-12:20

PDP1
10:50-11:50

MEET2
10:50-12:20

PH1
14:00-15:20

PDP2
14:00-15:15

MEET3
14:00-15:15

Registration
8:00-18:00

FLX5/FMC5
10:50-12:05

†

OLED2
10:50-12:25

3D6
10:50-12:30

PRJp
10:50-11:20

AMD7
14:00-15:15

DES5
14:00-15:35

FMC6
14:00-15:00

AMD8/FLX7
15:50-17:15

INP6
15:50-17:35

FMC7
15:50-16:50

Lunch
FLX6
14:00-15:15
Break
PH2
15:50-17:30

PDP3
15:50-17:10

MEET4
15:50-17:10

Exhibition
10:00-18:00

Thursday, December 6

MEET1
9:00-10:40

OLEDp, 3Dp,
VHFp, PRJp
14:00-17:00

Author Interviews &Demonstrations 17:30-18:30
3D7
9:00-10:20

OLED3
9:00-10:25

PRJ2
9:00-10:25

PHp
9:20-12:20

Break

Registration
8:00-13:00
Friday, December 7

FED2
10:50-12:10

VHF7
10:50-12:35

LCT5
10:50-12:15

3D8
10:50-12:20

OLED4
10:50-12:15

PRJ3
10:50-12:15

FMC9
10:50-11:50

OLED5
14:00-15:05

AMD9
14:00-15:35

PRJ4
14:00-15:35

Exhibition
10:00-14:00

Lunch
FED3
14:00-15:20

VHF8
14:00-15:35

LCT6
14:00-15:15

3D9
14:00-15:30
Break

FED4
15:50-16:50

VHF9
15:50-17:20

LCT7
15:50-17:10

3D10
15:50-16:25

OLED6
15:50-17:15

PH3
15:50-17:20
Author Interviews &Demonstrations 17:30-18:30†

Short Presentations

Event
Hall

Room A

Room B-2

FMCp,
FLXp:
Poster
9:2012:20

Room C-2

Event
Hall

FMCp:
Poster
9:2012:20

DESp†
Room
C-2
11:3011:40

DESp1:
Poster
14:0017:00

VHF6:
Wide-Angle andHead-Up Display
Human Factors
AMDp1: 9:00-10:30
Poster
9:2012:20 3D6: Digital
Museum of
Kyoto Gion
Festival
10:50-12:30

AMD7: Oxide
TFT:
Reliability
14:00-15:15

DES5: Recent
Advances inAugmented
Reality
Applications
14:00-15:35

AMD8/FLX7:
Oxide TFT:
Flexible
Displays
15:50-17:15

INP6: ARInteractive
Systems
15:50-17:35

PH4:
Phosphors
Late News
9:00-10:00

OLEDp:
Poster
14:0017:00

OLED3:
OLED forLighting
Application
9:00-10:25

FMC8
9:00-10:20

Friday, December 7

FED1
9:00-10:40

Room B-1

FLX3: Flexible
Oxide TFTs
15:50-17:25

Reception at Sakura (1F) 19:00-21:00
PH4
9:00-10:00

Event
Hall

AMD5: Oxide
TFT: Solution
Process
14:00-15:25

Author Interviews &Demonstrations 17:30-18:30

INP4
9:00-10:10

Room B-1

Lighting Technologies (LIT)FMC1:Manufacturing
Technologies (1)14:20-15:35
AMD3:
Oxide TFT:
Materials &Devices
9:00-10:30

Exhibition
12:40-18:20

Author Interviews &Demonstrations 17:50-18:50
DES3
9:00-10:10

Room A

Tue., Dec. 4

Opening,
KeynoteAddresses
9:25-12:40

Augmented Reality(AR)

Oxide TFT

Event Hall
Date

Registration
17:00-20:00

Main Hall

IDW/AD ’12 Special Topics of Interest Navigator
2F

Wednesday, December 5

Main
Entrance

Tuesday, December 4

Date
Mon.,
Dec. 3

IDW/AD ’12 Timetable
1F

FMC9: LED
Lighting
Technologies
10:50-11:50
PRJ4: Solid
State
Lighting
14:00-15:35
PH3:
Phosphors
for Lighting
15:50-17:20

PHp:
Poster
9:2012:20

IDW/AD ’12 Session Navigator
Tuesday, Dec. 4
9:25-12:40

PM

Wednesday, Dec. 5
17:50-18:50

AM

Thursday, Dec. 6

PM

17:30-18:30

AM

Friday, Dec. 7

PM

17:30-18:30

AMPM

17:30-18:30

Main Hall
KeynoteOpening,
KeynoteAddresses
Event Hall

LCT

Room DLC
New Functional
Semiconductors
LC Devices& Display Modes

Posters
Room AAMD

Organic &Carbon TFT

FMC

Manufacturing
Technologies(1)

Event Hall

Flexible Active
Matrix Devices*

Room B-1

A.I.
Event Hall

Manufacturing
Technologies
(2)

A.I.

Event Hall
Wide Viewing
Angle & Fast
Switching

A.I.

Room E

Event Hall

Event Hall

Oxide TFT:
Solution
Process

Touch Panel
(2)*

A.I.

Posters

Room A
Oxide TFT:
Materials &Devices

Oxide TFT:
Applications

Event Hall
Posters

Room DBlue Phase

Room B-2
Materials (1)Materials (2)Emerging
Display Mode
Room A
Oxide TFT:
Reliability

Event Hall

Room E

A.I.

Flexible
Materials &Fabrication
Processes*

Materials (3)Driving

Ultra HDTV

Event Hall
PDP

Room C-2
PH

Phosphors inEL

Room B-1

Event Hall

Active-Matrix
Circuits

A.I.

Event Hall
A.I.

Room B-2
Manufacturing
Technologies(3)

Event Hall

LED Lighting
Technologies

A.I.

Event Hall
Protective
Layer

Room C-1

Phosphors
Late NewsA.I.
Event Hall

Event Hall

Room B-2

A.I.

Posters

Phosphors forLighting

Phosphors inGeneralRoom C-1
FED

CNT Emitters & Applications &Applications
New Materials
Room AOLED

Keynote &Future Trend
Room B-2

3D

Ray-Space
Analysis

Room C-1
VHF

Color (1)Event Hall

Holography

A.I.
Event Hall

Color (2)*

A.I.

Room B-1
3D Crosstalk
Evaluation*

3D Image
Quality (1)*Room B-1
3D Crosstalk
Evaluation*

3D Image
Quality (1)*Event Hall

Micro OLED
Display

Room B-1

Event Hall

Room B-1

3D Image
Quality (2)*A.I.

Digital Museumof Kyoto Gion
Festival

Room B-1

Event Hall

Room B-1

A.I.

Wide-Angle &Head-Up
Display Human
Factors

3D Image
Quality (2)*High Reality
Room D

EPElectrophoretic
Displays

Event Hall

Reflective
Displays &Evaluations

A.I.

Room B-2
Electrochromic
Displays &Others (1)Electrochromic
Displays &Others (2) +Short
Presentation

Posters

DES

FLX

SUPER
Hi-VISION
Public Viewing

Color (2)*

A.I.

Room AEvent Hall

Flexible Active
Matrix Devices*

A.I.

Room C-2
Low Power
Consumption

Posters

LCT: Workshop on LC Science & Technologies
AMD: Workshop on Active Matrix Displays
FMC: Workshop on FPD Manufacturing, Materials & Components
PDP: Workshop on Plasma Displays
PH: Workshop on EL Displays & Phosphors
FED: Workshop on Field Emission Display & CRT
OLED: Workshop on OLED Displays & Related Technologies
3D: Workshop on 3D/Hyper-Realistic Displays & Systems

Device &Approach for
3D Display

Posters

A.I.

Room B-1

Room A

Posters

Organic TFTs
& Related
Materials

Flexible Oxide
TFTs

Room E
Touch Panel(1)

Touch Panel(2)*

Event Hall

Room B-1
A.I.

A.I.

Flexible
Materials &Fabrication
Processes*

Event Hall
Display &Imaging

A.I.

Room B-1

Event Hall

RecentAdvances inAugmented
Reality
Applications

A.I.

Room E
Materials &Evaluation for
Flexible
Devices

Fabrication for
Flexible
DevicesRoom AEvent Hall

Oxide TFT:
Flexible
Displays*

A.I.

Event Hall

Room C-1

Room B-1

Event Hall

A.I.

3D/2D Imaging 3D/2D Imaging
Systems (1)Systems (2)AR Interactive
Systems

A.I.

VHF: Workshop on Applied Vision & Human Factors
PRJ: Workshop on Projection & Large-Area Displays & Their Components
EP: Workshop on Electronic Paper
MEET: Workshop on MEMS & Emerging Technologies for Future Displays & Devices
DES: Workshop on Display Electronic Systems
FLX: Workshop on Flexible Displays
INP: Workshop on Touch Panels & Input Technologies

Ray-Based
Realistic 3D
DisplayFormatHuman Factors Image& Ergonomic& Visual
Designof HD/
Cognition
UHDTV

A.I.

A.I.

Event HallInteraction

Novel 3D
Approach

Event Hall

Event Hall

Display
Electronic
Systems +Short
Presentation

Event Hall
INP

A.I.

Display
Technologies(1)

A.I.: Author Interviews & Demonstrations*: Joint Session

VehicleDisplays

Components

A.I.

A.I.
Event Hall

Display
Technologies
(2)

A.I.
Event Hall

Quality
Evaluation

Room C-2

Posters

Emerging
Technologies

Fundamental
Mechanisms

Room E

Posters

Room D

Event Hall

Materials &Devices

Event Hall

Fundamental
MEMS Imaging Components && SensingProcess
Technologies
Room C-1

OLED forLighting
Application

Event Hall

MEET

Room C-2

A.I.

Event Hall
Posters

Short
Presentation

Fabrication
Processes

Event Hall

Event Hall

Room A

Posters

Room B-2
PRJ

A.I.

A.I.

Backlight

Room C-2

Posters

Event HallLC Alignment
Technology

Event Hall

Oxide TFT:
Flexible
Displays*

Room B-2

Photo
Alignment

A.I.
Event Hall

Display
Measurement

A.I.

Room B-2

Event Hall

Solid State
Lighting

A.I.

http://www.idw.ne.jp/

IDW/AD ’12
FINAL PROGRAM

IDW/AD ’12 Secretariat:
c/o Bilingual Group Ltd.
3-3-6 Kudan Minami, Chiyoda-ku,
Tokyo 102-0074, Japan
Phone：+81-3-3263-1345
FAX：+81-3-3263-1264
E-mail：idw@idw.ne.jp

IDW/AD ’12

The 19th International Display Workshops
in conjunction with Asia Display 2012

Final Program

Kyoto International Conference Center
Kyoto, Japan
December 4(Tue) – 7(Fri), 2012