THE 17TH INTERNATIONALDISPLAY WORKSHOPS

Workshops on• LC Science and Technologies (LCT)• Active Matrix Displays (AMD)• FPD Manufacturing, Materials
and Components (FMC)• Plasma Displays (PDP)• EL Displays and Phosphors (PH)• Field Emission Display and CRT (FED)• Organic LED Displays (OLED)• 3D/Hyper-Realistic Displays and Systems (3D)
• Applied Vision and Human Factors (VHF)• Projection and Large-Area Displays
and Their Components (PRJ)• Electronic Paper (EP)• MEMS and Emerging Technologies
for Future Displays and Devices (MEET)• Display Electronic Systems (DES)• Flexible Displays (FLX)

Topical Sessions on• Touch Panels and Input Technologies (INP)• Lighting Optics, Devices and Systems (LIT)

Final Program
Fukuoka International Congress Center
Fukuoka, Japan
December 1(Wed) – 3(Fri), 2010

CONTENTS
Program Highlights................................................................................. 5
General Information................................................................................ 9Travel Information................................................................................. 12
Plenary Sessions
Wednesday, December 1
IDW ’10 Opening.................................................................................. 17
IDW ’10 Keynote Address..................................................................... 17
IDW ’10 Invited Address....................................................................... 17
Workshop on LC Science and Technologies
Wednesday, December 1
LCTp1 Poster : LC Materials............................................................... 18
LCTp2 Poster : LC Alignment............................................................. 22
LCTp3 Poster : Characterizations....................................................... 25
LCTp4 Poster : LCD Modes................................................................ 27
LCTp5 Poster : Transflective LCDs..................................................... 33
LCT1 Photo Alignment Technology................................................... 34
Thursday, December 2
LCT2 High Performance LC Technology........................................... 36
LCT3 New Functional LCDs.............................................................. 37
LCT4 High Performance LCDs.......................................................... 38
LCT5 Emerging LC Application......................................................... 39
Friday, December 3
LCT6 Nanostructured LC................................................................... 40
LCT7 New LCD Design..................................................................... 42
Workshop on Active Matrix Displays
Wednesday, December 1
AMD1 AM-LCD................................................................................... 44
AMD2 System on Panel & Sensing Device........................................ 45
Thursday, December 2
AMD3 Si TFT...................................................................................... 46
FLX5/AMD4 Flexible Active-Matrix Devices....................................... 47
AMDp Poster : Active-Matrix Devices.................................................. 49
AMD5/OLED6 AM-OLED................................................................... 61
Friday, December 3
AMD6 Organic & Carbon TFT............................................................. 62
AMD7 Oxide TFT (1)........................................................................... 63
AMD8 Oxide TFT (2)........................................................................... 64
AMD9 Nanodevice & Oxide TFT......................................................... 65
Workshop on FPD Manufacturing, Materials and Components
Wednesday, December 1
FMC1 Optical Films............................................................................ 67
Thursday, December 2
FMCp Poster : FPD Manufacturing, Materials and Components........ 68
FLX7/FMC6 Materials & Components for Flexible Displays.............. 78
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Friday, December 3
FMC2 Manufacturing Technologies (1)............................................... 79
FMC3 Manufacturing Technologies (2)............................................... 80
FMC4 Materials (1)............................................................................. 81
FMC5 Materials (2)............................................................................. 82
Workshop on Plasma Displays
Thursday, December 2
PDP1 Panel Configuration................................................................. 84
PDP2 Picture Quality......................................................................... 85
PDP5 Late News Session (Protective Layer)..................................... 86
Friday, December 3
PDPp Poster : Plasma Displays.......................................................... 87
PDP3 High Efficiency......................................................................... 91
PDP4 Protective Layer....................................................................... 92
Workshop on EL Displays and Phosphors
Wednesday, December 1
PH1
Phosphors in General.............................................................. 95
Thursday, December 2
PH2
Phosphors for LEDs................................................................. 96
PHp
Poster : Phosphors................................................................... 97
PH3
Emissive Displays and Phosphors......................................... 106
Workshop on Field Emission Display and CRT
Friday, December 3
Opening.............................................................................................. 108
FED1 FEDs & BLUs......................................................................... 108
FED2 Field Emitters (1)................................................................... 109
FED3 Field Emitters (2)................................................................... 110
FED4 Field Emitters (3)................................................................... 111
Workshop on Organic LED Displays
Wednesday, December 1
OLED1 OLED Keynote & Materials................................................ 113
OLED2 OLED Soluble Technologies.............................................. 114
OLED3 OLED Display Applications................................................ 115
Thursday, December 2
FLX4/OLED4 Flexible OLED............................................................ 117
OLED5 OLED Device Technologies............................................... 118
OLEDp Poster : OLED Technologies............................................... 119
AMD5/OLED6 AM-OLED................................................................. 127
Workshop on 3D/Hyper-Realistic Displays and Systems
Thursday, December 2
3D1
Holography and 3D Display................................................... 129
3D2
3D Display (1)........................................................................ 130
3Dp
Poster : 3D/Hyper-Realistic Displays and Systems................ 131
3D3/DES3 3D System and Content................................................. 135
Friday, December 3
VHF8/3D4 3D Human Factors......................................................... 136
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3D5
3D6

3D Image Quality................................................................... 138
3D Display (2)........................................................................ 139
Workshop on Applied Vision and Human Factors

Wednesday, December 1
VHF1 Lightness Perception............................................................. 141
VHF2 Color Perception.................................................................... 142
VHF3 Color Reproduction................................................................ 143
Thursday, December 2
VHFp Poster : Applied Vision and Human Factors........................... 145
VHF4/DES1 Multi Primary (1).......................................................... 149
VHF5/DES2 Multi Primary (2).......................................................... 150
VHF6 Moving Image Quality and Backlight System......................... 151
Friday, December 3
VHF7 Display Human Factors.......................................................... 152
VHF8/3D4 3D Human Factors......................................................... 153
Workshop on Projection and Large-Area Displays
and Their Components
Wednesday, December 1
PRJp Poster : Projection.................................................................. 155
PRJ1 Illumination Systems.............................................................. 155
Thursday, December 2
PRJ2 New Projection Applications.................................................. 156
PRJ3 Pico-Projectors...................................................................... 158
PRJ4 Laser Projection and Despeckling Technologies................... 159
PRJ5 Digital Signage and Large Venue Projectors......................... 160
Workshop on Electronic Paper
Wednesday, December 1
EPp
Poster : Electronic Paper........................................................ 162
FLX3/EP1 Flexible Electronic Paper................................................ 164
Thursday, December 2
Opening.............................................................................................. 166
EP2Electrophoretic Displays........................................................ 166
EP3
Color Electrophoretic Displays............................................... 167
EP4
Frontier Research for e-Paper............................................... 168
EP5Electrochromic Displays........................................................ 169
EP6
Cholesteric LCDs................................................................... 170
Friday, December 3
EP7Electrowetting and LCDs....................................................... 172
Workshop on MEMS and Emerging Technologies
for Future Displays and Devices
Thursday, December 2
Opening.............................................................................................. 174
MEET1 Emerging Technologies...................................................... 174
MEET2 Fundamental Components, Process Technologies (1)...... 175
MEET3 Optical MEMS and Device Technologies........................... 177
MEET4 Displays and Imaging......................................................... 178
MEET5 Fundamental Components, Process Technologies (2)...... 180
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Workshop on Display Electronic Systems
Thursday, December 2
DESp Poster : Display Electronic Systems....................................... 182
VHF4/DES1 Multi Primary (1).......................................................... 183
VHF5/DES2 Multi Primary (2).......................................................... 185
3D3/DES3 3D System and Content................................................. 186
Friday, December 3
DES4 Display Electronics................................................................ 187
DES5 Low Power Technology.......................................................... 188
DES6 Display Quality....................................................................... 189
DES7 Visible Light Communication................................................. 190
Closing................................................................................................ 191
Workshop on Flexible Displays
Wednesday, December 1
Opening.............................................................................................. 192
FLX1 Advanced Flexible Display Technologies............................... 192
FLX2 Printing Fabrication Processes.............................................. 193
FLX3/EP1 Flexible Electronic Paper................................................ 194
Thursday, December 2
FLX4/OLED4 Flexible OLED............................................................ 195
FLX5/AMD4 Flexible Active-Matrix Devices..................................... 196
FLX6 Flexible Organic TFT.............................................................. 198
FLX7/FMC6 Materials & Components for Flexible Displays............ 199
Friday, December 3
FLXp Poster : Flexible Materials and Devices.................................. 200
Topical Session on Touch Panels and Input Technologies
Wednesday, December 1
INP1 Touch Panel (1)...................................................................... 205
INP2 Touch Panel (2)...................................................................... 206
Thursday, December 2
INP3 Imaging System..................................................................... 207
INP4 3D Interactive System............................................................ 208
Topical Session on Lighting Optics, Devices and Systems
Wednesday, December 1
LIT1
LED Light Source Technologies............................................. 210
LIT2
Backlight................................................................................ 211
Thursday, December 2
LIT3
Phosphors for Lighting........................................................... 212
LIT4
Solid State Projection Light Source....................................... 213
IDW ’10 Committees........................................................................... 215
Floor Plan........................................................................................... 223
IDW ’10 Timetable
IDW ’10 Session Navigator

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PROGRAM HIGHLIGHTS
Scientific and technological advances in research and development on
information displays can be found at the 17th International Display
Workshops (IDW ’10). Features of the IDW ’10 include the integration of
the following fourteen workshops as well as two topical sessions focusing
on recent progress of lighting and input technologies.
Workshops on• LC Science and Technologies• Active Matrix Displays• FPD Manufacturing, Materials and Components• Plasma Displays• EL Displays and Phosphors• Field Emission Display and CRT• Organic LED Displays• 3D/Hyper-Realistic Displays and Systems• Applied Vision and Human Factors• Projection and Large-Area Displays and Their Components• Electronic Paper• MEMS and Emerging Technologies for Future Displays
and Devices• Display Electronic Systems• Flexible Displays
Topical Sessions on• Touch Panels and Input Technologies• Lighting Optics, Devices and Systems
The three-day conference will feature 599 papers, including a keynote
address, an invited address, 99 invited papers, 220 oral presentations,and 278 poster presentations. Following plenary session of keynote andinvited addresses in the Wednesday morning, presentations will begin
and continue in eight parallel oral sessions through Friday. Poster
sessions and author interviews will enable participants to discuss topics
in detail. IDW ’10 will also present “IDW Best Paper Awards” and “IDW
Outstanding Poster Paper Awards” based on paper originality andtechnical significance to information displays. Exhibits by universities
and display industry-related businesses will also be featured from
Wednesday to Friday in parallel with workshops. IDW ’10 should be ofinterest to not only researchers and engineers, but also managers ofcompanies and institutions in the display community.

Workshop on LC Science and Technologies (LCT)
Recent advances in LC materials and device technologies are presented.
The sessions cover from fundamental studies to recent development in
LCD technologies. New LC materials & modes including blue phasedisplay, LC alignment processes, display measurement, fast-response
LCDs, high performance LCDs and emerging new applications are
discussed.

Workshop on Active Matrix Displays (AMD)AMD is the workshop for the core technologies of most advanced FPD
applications, covering the various technologies of Si-TFT, Oxide TFT,
Organic TFT, OLED, integrated sensors, flexible devices and novel
applications. It is recognized as one of the largest workshop in IDW. The
recent trend in paper presentations tends to focus on Oxide TFT, which
are expected to find applications in the next generation of OLED andflexible devices. This year, we devote seven for AMD alone, and three forjoint sessions, which cover a broader range of device/process toapplications. Given the expectations surrounding environmental aspects,
a range of interesting paper presentations are expected.
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Workshop on FPD Manufacturing, Materials and Components(FMC)
The FMC workshop covers the recent developments and achievementsin the field of flat panel displays. The cutting-edge technologies of the
optical films, color filters, LCD backlighting systems, optical components,
manufacturing technologies, and measurement systems are highlighted.
Recycling of FPD materials and environmental safety technologies areincluded as highlighted topics.

Workshop on Plasma Displays (PDP)The PDP workshop consists of 15 oral and 10 poster presentations.
Similar to the last year, there will be many excellent presentations onprotecting layers. Improvements in conventional MgO, as well as theunderstanding of the high-efficiency and long-life operation of newmaterials including SrCaO, are investigated. We will have many
presentations from China. Dr. Yan, in his invited talk, will introduce R&D
as well as business trends in PDP activities in China. Other invited talks
include presentations on 3D PDP from LG Electronics, green PDP from
Samsung SDI, and improvement of picture quality of 2D/3D PDP from
Panasonic. It should be noted that Pusan National University is going to
introduce a high-resolution Quad-FHD PDP.

Workshop on EL Displays and Phosphors (PH)This workshop covers the latest R&D achievements in inorganic ELDs,
phosphors for emissive displays and solid-state illumination as well as
LEDs. The workshop consists of invited talks, contributed papers andposter papers. These will present phosphors for LEDs, PDPs, ELDs,
FEDs, lighting and computational approaches for phosphors includinginteresting topics such as quantum dot EL and synthesis techniques forphosphors.

Workshop on Field Emission Display and CRT (FED)
This workshop covers the entire field of CRT and field emission display
technologies. Recent progress in various backlight units for LCD
equipped with carbon nanotube (CNT) field emitter arrays is presented.
Structures of field emitters with focusing electrodes, field emission
characteristics and various field emitter materials, such as CNTs, HfN,
and nanocrystalline silicon, are also discussed.

Workshop on Organic LED Displays (OLED)This workshop includes recent developments in OLED materials,
devices, display systems, solution process technologies and new device
architecture. OLED materials and technologies based on printing
methods are expected for large size and low cost applications. Device
fabrication process and architecture for mass productions are alsopresented.

Workshop on 3D/Hyper-Realistic Displays and Systems (3D)This workshop focuses on recent progress in 3D/hyper-realistic image
systems and related visual technologies. It also covers stereoscopic/3D
display, holography, 3D image quality, and 3D contents. This year, twosessions are held together with the “Display Electronic Systems (DES)”
and “Applied Vision and Human Factors (VHF)” workshops. Invited talks
include topics from the forefront of 3D imaging technologies, and recent
research into advanced display systems.

6Workshop on Applied Vision and Human Factors (VHF)
This workshop provides a forum for lively discussion of the latest
academic and industrial R&D in the field of applied vision and humanfactors associated with display technology, covering a wide range fromfundamental theory to commercial applications, including methods for
improved contrast, multi-primary displays, color reproduction, dynamic
characteristics, and the assessment and improvement of image quality
and the viewing environment. This year sees four invited talks, held
jointly with the DES and 3D workshops, on color reproduction, multiprimary displays, and the safety of 3D systems. Excluding Late News,
there will be 29 oral presentations over eight sessions, plus 11 posters.
A particular feature of this year’s workshop is the number of topical
papers related to color, including multi-primary displays.

Workshop on Projection and Large-Area Displays and Their
Components (PRJ)
In this workshop, the latest technologies in the field of projection display
will be discussed. Rapidly growing technologies such as pico-projectors
with newly developed green laser and novel optical systems arehighlighted. As laser technologies applied to projection displays become
popular, new despeckling methods will be proposed. Also, near-eye andother applications based on projection technologies that are becoming areality, and new methods are presented. Ongoing progress in the fieldsof large-area displays for applications such as 3D systems and digital
signage will be discussed as well.

Workshop on Electronic Paper (EP)This workshop focuses on current topics in electronic paper including
rewritable paper, paper-like displays and flexible displays. There iscurrently an eager demand for developments in e-paper technologies
due to the emergence of e-books, e-newspapers, electronic shelf labels,
and other applications. Various novel technologies in electrophoretic,
liquid crystal, electrowetting, electrochromic, liquid powder and tonerdisplay systems will be reported on. Systems, devices, materials, humanfactors and applications in this field are expected to be discussed.

Workshop on MEMS and Emerging Technologies for Future
Displays and Devices (MEET)
The workshop is unique in covering all aspects of MEMS, nanotechnologies
and emerging technologies concerning future displays, imaging devices,and emerging electron devices. It seeks to broaden the horizons ofdisplay and imaging technologies into cutting-edge technologies.
Research areas such as materials, basic physics and fabrication process
are included. Among all the MEMS and display conferences in the world,
this is the only opportunity for MEMS and cutting-edge technology
researchers to gather and discuss such devices. Authorities in this field
are invited from top research institutions around the world. The invited
speakers are from Univ. of Cambridge, QD Vision (MIT’s venturecompany), Ecole Polytech, Uni-Pixel Displays, Qualcomm, Nagoya
Univ., Kyushu Univ., Univ. of Tokyo and Toyota Technological Institute.
With excellent contributed papers, this workshop invites participants
who wish to open a new field of displays, imaging devices and emerging
devices.

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Workshop on Display Electronic Systems (DES)This workshop covers all aspects of display systems in relation toelectronics of video data processing, interface technologies, cooperative
operations between display components such as cells and backlights,
sensors, and applications in the new areas such as 3D video. We have
set up a new session on visible light communications, which are emerging
technologies for the promotion of new applications. In addition, thesystems for a wide and high dynamic range of color reproduction suchas multi primary color systems, high-fidelity, high-frame-rate, highresolution, and low power consumption systems, are focused on.

Workshop on Flexible Displays (FLX)
Recently, there is much attention on flexible display technologies. The
technologies are spread in a wide range of fields from material science
to a practical application. The hottest sessions cover all aspects offlexible display technologies including electronic paper, flexible flat panel
display, display materials, TFT and substrate technologies, which areinterrelated with AMD, FMC, OLED and EP-WS.

Topical Session on Touch Panels and Input Technologies (INP)
This topical session covers all aspects of input technologies including
materials, devices and systems. We expect that INP will open up brandnew fields by fusing input and display technologies. INP sessions will beheld by the related workshops on DES, AMD, FMC and EP. In addition to
the recent activities in the popular touch panel technology, 3D input
systems for 3D displays, new user interface technologies and the mostadvanced image sensor technologies are featured in this year’s
session.

Topical Session on Lighting Optics, Devices and Systems (LIT)The LIT is a topical session that covers all aspects of lighting related todisplays and eco-friendly illumination systems.The cutting-edge technologies
of light sources, such as the lasers for projectors, the backlights for
LCDs, and the corresponding materials, are topics that will be looked atclosely.

IDW Best Paper Award and IDW Outstanding Poster Paper
Award
IDW will present “IDW Best Paper Award” and “IDW Outstanding Poster
Paper Award”. The award committee of IDW will select the mostoutstanding papers from those presented at IDW ’10. The award
winners will be announced on the IDW website and given a plaque after
the conference.

Exhibition
The IDW ’10 Exhibition, which will be held from December 1 throughDecember 3, covers materials, components, manufacturing andmeasuring equipments, software systems and other related products
for display devices. Please join-in and enjoy discussions at exhibitors’
booths (2F Lobby, 4F Lobby).
December 1: 12:00 – 18:00
December 2: 10:00 – 18:00
December 3: 10:00 – 14:00

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GENERAL INFORMATIONSPONSORSHIP

IDW ’10 is sponsored by the Institute of Image Information and Television Engineers (ITE) and the Society for Information Display (SID).

CONFERENCE SITE

Fukuoka International Congress Center
2-1, Sekijo-machi, Hakata-ku
Fukuoka 812-0032, Japan
Phone: +81-92-262-4111 Fax: +81-92-262-4701

ON-SITE SECRETARIAT

Telephone and fax machines for IDW ’10 use will be temporarily set up
in the secretariat room (Room 405) at the Fukuoka International Congress
Center (November 30-December 3). Phone/Fax: +81-92-282-8364

BANQUETA buffet-style banquet will be held on December 1 from 19:30 to 21:30
at the Crowne Grand Ball Room (2F) in ANA Crowne Plaza Fukuoka.
As the number of tickets is limited, you are urged to make an advancereservation through the website.

EVENING GET-TOGETHER WITH WINE

A get-together will be held on November 30 from 18:00 to 20:00 at
RACONTER (1F) in the conference site. Wine (Sponsored by Merck
Ltd., Japan) will be served to participants with a relaxed atmospherefor informal discussion.

REGISTRATION

Registration is available in advance and also on-site. However, on-site
registrants may not be able to obtain books, if there are an unexpectedly
large number of on-site registrations. Advance registration is strongly
recommended.

Registration Fees

The registration fee for IDW ’10 includes admission to the conference
and CD-ROM of the proceedings. Additional ¥7,000 will be charged for
those who want the proceedings in book format. For users who do nothave CD drives on their computers, we will provide the data at theconference site. Detailed information will be announced on thewebsite.
Paid by Oct. 29
After Oct. 29
Individual Member¥ 30,000¥ 40,000(ITE/SID/ASO*)
Non-Member**¥ 40,000¥ 50,000
Student***¥ 8,000¥ 10,000
Life Member of ITE/SID¥ 8,000¥ 10,000Banquet¥ 7,000¥ 10,000*ASO: Academic Supporting Organizations(See p. 11 as well as “Supporting Organizations and Sponsors” at theend of each workshop section.)**Non-Member: If you intend to join either ITE or SID, one year membership fee will be subsidized by IDW ’10 committee.
***Photocopy of student ID is required.
Please note that the reduced registration fee must be paid by October
29. The full fee will be charged for payments made later than October
29. Also note that the number of banquet tickets to register on site islimited.
9

For additional sets of the proceedings (Book and CD-ROM)
At the conference site
¥ 8,000
Air mail after the conference¥ 15,000
Domestic mail after the conference¥ 10,000
Additional sets of Book and CD-ROM can be purchased only those whohave completed payment by November 19.

Payment

Three ways are provided for registration.

(1) e-Registration

Access the following URL.
http://www.idw.ne.jp/regist.html
e-Registration will be accepted until November 19, 2010.

(2) Mail or Fax Registration

Complete the registration form (download from the website) and send it
to the secretariat together with all necessary payments no later thanNovember 19, 2010.
IDW ’10 Secretariat
c/o Bilingual Group Ltd.
3-3-6 Kudan Minami, Chiyoda-ku Tokyo 102-0074, Japan
Phone: +81-3-3263-1345 Fax: +81-3-3263-1264
E-mail: idw@bilingualgroup.co.jp
The registration fee should be remitted by one of the following methods.
1. Credit Card
2. Bank Transfer to:
Bank:
Bank of Tokyo-Mitsubishi UFJ(Swift Code: BOTKJPJT)
Branch:Ichigaya Branch (Branch No. 14)
Account No.: 1474095 (Ordinary Account)
Account:
IDW
Please attach a copy of the bank receipt with the registration
form to avoid any confusion.
All above payments should be made in JAPANESE YEN.
Also, please note that personal and traveler’s checks are not accepted.

(3) On-site Registration

Conference registration desk will be open:
November 30 (Tue.)
17:00 – 20:00
December 1 (Wed.)
8:00 – 18:00
December 2 (Thu.)
8:00 – 18:00
December 3 (Fri.)
8:00 – 13:00
The on-site registration fee will be payable by:
1. Cash (JAPANESE YEN only)
2. Credit Card (VISA or MasterCard only)
Bank transfer, bank check, or personal/traveler’s check are notaccepted.

Cancellation Policy

Refunds for registration, banquet, additional sets of proceedings etc. will
be made upon receipt by IDW ’10 secretariat of written cancellation by
October 29. For cancellations received after October 29 or no-shows,refunds will not be made. However, after IDW ’10 closes, a set of theproceedings will be sent to the registrants who have paid the registration
fees. If it becomes difficult to hold IDW ’10 due to infectious disease andother unavoidable factors, we will substitute the IDW with the maildelivery of the IDW ’10 proceedings at a later date to all those who haveregistered for participation.
10

INQUIRIESIDW ’10 Secretariat
c/o Bilingual Group Ltd.
3-3-6 Kudan Minami, Chiyoda-ku Tokyo 102-0074, Japan
Phone:+81-3-3263-1345 Fax: +81-3-3263-1264
E-mail:idw@bilingualgroup.co.jp

ACADEMIC SUPPORTING ORGANIZATIONS (ASO)

The Chemical Society of JapanThe Electrochemical Society of Japan (ECSJ)The Illuminating Engineering Institute of JapanThe Imaging Society of JapanThe Institute of Electrical Engineers of JapanThe Institute of Electronics, Information and Communication
Engineers (IEICE)The Institute of Image Electronics Engineers of Japan
Japan Ergonomics Society (JES)The Japanese Liquid Crystal Society (JLCS)The Japan Society of Applied Physics
The Virtual Reality Society of JapanThe Society of Polymer Science, Japan

FUNDS

Grant-in-Aid for Scientific Research (KAKENHI: 2264002) from MEXT
The Asahi Glass Foundation

For final updated information, please visit our website,
http://www.idw.ne.jp/10record.html.

Evening Get-Together
with Wine
Tuesday, November 30, 2010
18:00 – 20:00
at RACONTER (1F),
Fukuoka International Congress Center(Sponsored by Merck Ltd., Japan)
See page 9 for details

11

TRAVEL INFORMATIONACCOMMODATIONSJTB Tokyo Metropolitan Corp. will handle arrangements for your hotel
reservations.
Hotel reservations can be made at the IDW official website.
http://www.idw.ne.jp/accommodation.html
JTB Tokyo Metropolitan Corp.
Corporate Sales Office Yokohama
Phone: +81-45-316-4602
Fax: +81-45-316-5701
Office Hours: 9:30-17:30 (Weekdays only)
E-mail: jtb_convention@met.jtb.jp
There will be an on-site travel information desk during the conference
period to handle arrangements for transportations.

VISAS

Visitors from countries whose citizens must have visas should apply to
Japanese consular office or diplomatic mission in their respective
country. For further details, please contact your travel agency or the
local consular office in your country.
Attention: For some countries’ citizens, official documents prepared by
the secretariat will be needed. Please ask the secretariat at least twomonths before the conference.

CLIMATE

The average temperature in Fukuoka during the period is around 12°C
in the daytime and 4°C at night.

BANQUET
Wednesday, December 1, 2010
19:30 – 21:30
Crowne Grand Ball Room (2F)ANA Crowne Plaza Fukuoka
See page 9 for details

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FUKUOKA

Fukuoka City (also known as “Hakata”) lies on the northern coastof Kyushu, the southernmost of the four main islands of Japan.
The population of the city is approximately 1.4 million people,
making it the 7th largest city in Japan.
Being the closest major city in Japan to the Korean Peninsula andChina, Fukuoka has from ancient times been a gateway foreconomic and cultural exchanges with its Asian neighbors. On thebasis of these historical and geographical links, the city is working
on many levels to strengthen its relationships with the rest of Asia,
towards the goal of becoming a “focal point for exchange in Asia”.

PLACES OF INTEREST
Dazaifu Tenmangu Shrine
Nishitetsu trains are available from Tenjin to Dazaifu Tenmangu(about 20 minutes by train and then 5 minutes on foot). Here, atthe head shrine of all the Tenmangu Shrines in Japan, the god oflearning, Michizane Sugawara, is worshipped. The plum tree tothe right of the main building as you face it is called Tobiume (theflying plum tree), because it is said that the tree flew here to bewith Michizane.
Kyushu National Museum
This museum is located a 5-minute walk from Dazaifu Tenmangu
Shrine, and is Japan’s newest National Museum after Tokyo, Kyoto,
and Nara. Based on the concept of “Understanding Japanese culture
from an Asian viewpoint”, various valuable exhibits depict Japan’s
blossoming relationships with other Asian countries over a long time.
Fukuoka City Museum
Covered with half-mirrored windows, this museum stands with the
Fukuoka Tower rising behind it (about 15 minutes by bus from
Hakata Station). There are 4 different exhibition rooms and a
special exhibition room for visiting exhibitions. The Gold Seal, one
of Japan’s national treasures, is exhibited in the Permanent
Exhibition Room.
Uminonakamichi
Uminonakamichi is a peninsula connecting Shikanoshima Island
in Higashi Ward to mainland Fukuoka. A large peninsula measuring about 8 km in length and about 2.5 km in width at its widest
point, Uminonakamichi is a recreation area with a park in its
central to north-western region. The JR Kashii Line and prefectural roads run parallel through Uminonakamichi, providing a
popular scenic route. Those who prefer a boat ride can catch aferry operated by Fukuoka City at the Bayside Place Hakata Futoh.
Yatai (Street Stalls)“Hakata” is famous for “Hakata Ramen”. One of the special
features of nighttime Hakata is “yatai”, street stalls that appear on
the streets in the evening in Nakasu, Tenjin, and other areas. Yatai
offer a range of hot tasty foods including Hakata Ramen, and achance to rub shoulders with the locals.
More information is available at the following websites:
http://www.city.fukuoka.lg.jp/english/index.html
http://www.welcome-fukuoka.or.jp/english/
http://www.city.fukuoka.lg.jp/showcase/english/index.html
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Access to Conference Site
Busan Ferry
Terminal

Kansai Int'l
Airport (KIX)

Narita Int'l
Airport (NRT)

Haneda Int'l
Airport (HND)

Jetfoil₩ 115,000 / 175 min.

Flight 70 min.
4 flights / day

Flight 120 min.
5 flights / day

Flight 110 min.
46 flights / day

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Fukuoka International Congress Center
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14

Hotel Map
Tourist Information Center
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Fukuoka International
Translation machines are available Congress Center
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No. 99Bus No. 88
D. City Tourist Informarion(Hakata station)

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❻ Nakasu-kawabata

KaizukaGofukumachi
SubwayKuko (Airport)
Line

Gion

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Bus Stop E
No. 88, 99
Nishi-Nippon City Bank❸❶❺

Fukuoka Kotsu Center(Hakata St.
❷ Bus Terminal)

To Fukuoka
AirportE❶ ANA Crowne Plaza Fukuoka(Banquet Site)❷ Hotel Nikko Fukuoka❸ Sutton Place Hotel Hakata❹ Nishitetsu Inn Hakata❺ Yaoji Hakata Hotel❻ Hakata Excel Hotel Tokyu❼ IP Hotel Fukuoka❽ Best Western Fukuoka Nakasu Inn

15

IDW Best Paper Award
This award will go to the most outstanding paper
selected from those presented at IDW ’10.
The 2010 award winners will be announced on the
IDW website: http://www.idw.ne.jp/award.html

IDW Outstanding
Poster Paper Award
This award will go to the most outstanding paper
selected from those presented at IDW ’10
poster presentation.
The 2010 award winners will be announced on the
IDW website: http://www.idw.ne.jp/award.html

EXHIBITION
12:00 – 18:00 Wednesday, Dec. 1, 2010
10:00 – 18:00 Thursday, Dec. 2, 2010
10:00 – 14:00 Friday, Dec. 3, 2010
2F Lobby, 4F Lobby
Fukuoka International Congress CenterFree admission with your registration name tag

16

Wednesday

December 1

Plenary Sessions
Wednesday, December 1
10:20 - 10:30

Main Hall

Opening
Plenary

Master of Ceremony: N. Ibaraki, Executive Chair, AIST, Japan
Opening Remarks
10:20
K. Betsui, General Chair, Hitachi, Japan
R. Hattori, Program Chair, Kyushu Univ., Japan
10:30 - 11:15

Main Hall

Keynote Address
Co-Chairs:

R. Hattori, Program Chair, Kyushu Univ., JapanK. Betsui, General Chair, Hitachi, Japan

Keynote Address
10:30

The Artistic & Scientific World in 8K Super
Hi-Vision

Y. Kawaguchi
Univ. of Tokyo, JapanThe Ultra HDTV system consists of an 8k horizontal spatial resolution
and 60 frames per second temporal resolution. This advanced
development of 8K Ultra HDTV enable us to verify a wide variety of
new possibilities.
11:15 - 12:00

Main Hall

Invited Address
Co-Chairs:

T. Miyashita, Program Vice-Chair, Tohoku Univ., Japan
M. Date, Program Vice-Chair, NTT COMWARE, Japan

Invited Address
11:15

TAOS-TFTs: History and Perspective

H. HosonoTokyo Inst. of Tech., Japan
Since the ﬁrst report of a-IGZO-TFT in late 2004, extensive researchhas been performed toward real application to the backplane of next
generation FPDs. This paper reviews the material design concept oftransparent amorphous oxide semiconductors (TAOS) and uniquefeatures of TAOS-TFTs along with next challenge.

17

Wednesday

December 1

Workshop on
LC Science and Technologies
Wednesday, December 1
13:20 - 16:20

Poster/A.I. Room

Poster LCTp1: LC Materials
LCTp1 - 1

Effects of LC Compositions on Polymer StabilizedBlue Phase LCs
L.-Y. Wang, T.-H. Huang, N. Sugiura, W.-L. Liau,
C.-C. Han*, C.-J. Lung*, P.- L. Jung*, H.-C. Lin*AU Optronics, Taiwan*Nat. Chiao Tung Univ., Taiwan

The compositions of polymer stabilized blue phase liquid crystals (PSBPLCs) relating to the thermal properties and electro-optical ones
which are important for both display performance and productivity were
investigated in this paper. By optimizing quantity of chiral-dopants andnew monomers, temperature range of the BPLCs could successfully beenlarged.
LCTp1 - 2

Electro-Optic Response in Blue Phase LC
J.-Y. Chou, H.-Y. Chen, S. Chen*
Feng Chia Univ., Taiwan*Chunghwa Picture Tubes, Taiwan

In PI-less technology, we donʼt need PI materials and solvent materials
that can attain green process. The ﬁnal results have some advantages,
such as high contrast ratio, high brightness, viewing angles. Finally, we
have successively developed a new cell process without PI process for
VA mode.
LCTp1 - 3

High UV Light Resistance and Low Rotational
Viscosity LC
K.-C. Wang, P.-C. Huang, A.-C. Chen, K.-L. Cheng
ITRI, Taiwan

We present the novel triﬂuoro-methyl vinyl (TfV) liquid crystal materials
which possess high photostability. Voltage holding ratio (VHR) result
is sustained after the irradiation. TfV LCs provide a reliable UV
stability compared with F-containing LCs. Plus, mixtures with the TfV
LCs exhibit lower rotational viscosity than well-known bis-cyclohexyl
diluents.

18

Wednesday
LCTp1 - 4

December 1Synthesized Novel Dendritic Molecules andBroadening of Temperature Range in Liquid
Crystalline Blue Phases
S. Shibayama, H. Higuchi, H. Kikuchi
Kyushu Univ., Japan

Liquid Crystalline Blue Phases are promising for applications to tunable
photonic liquid crystals because they have three-dimensional photonic
bands for visible wavelength. However, narrow temperature range of
BPs is a problem to be solved for practical applications. We report the
expanded temperature range of BPs with novel dendritic molecules.
LCTp1 - 5Synthesis and Properties of Novel LCs with
Fluorinated Alkenyl Side Chains

LCT

T. Sugita, S. Ihara, T. Asai, H. Koh
AGC SEIMI Chem., Japan
Novel LCs with ﬂuorinated alkenyl side chain have been prepared byusing Tetraﬂuoroethylene. Some of these LCs show low bulk viscosities
and moderate virtual clearing points. It is possible that some of theseLCs will be useful LC materials for AM LCDs.
LCTp1 - 6

Direct Observation of Polymer Network Structure on
Polymer Stabilized Blue Phase
M. Kwak, H. Kwon, D. Han, J. Jeon, J. Park, S. Choi,
Y. Choi, D. Koo
LG Display, Korea

The polymer network structure of polymer stabilized blue phase was
directly observed with SEM. As a result of analyzing the polymer ofdefect structure was clearly detected, polymer chain after eliminate
liquid crystal, organized network form like form of sponge. The polymer
chain was changed according to the temperature condition.
LCTp1 - 7

Influence of Heating Stir Process on Light-Emitting
Properties in LC Electrochemiluminescent Cells
M. Tanimoto, T. Horiuchi, M. Honma, T. Nose
Akita Pref. Univ., Japan

From the measurement of optical density and photoluminescentintensity in organic ﬂuorescent dye-doped liquid-crystal (LC)cells, heating temperature dependence of both dye concentrationand ﬂuorescent quantum yield in sample preparation process
have been investigated together with luminance properties of LC
electrochemiluminescent cells.

19

Wednesday
LCTp1 - 8

December 1
Difference in the Long-Term Image Degradation of
LCD Caused by Two Kinds of Known Impurities
Added to the Host Nematic
M. Akimoto*, Y. Higuchi*, M. Inoue*,**, Y. Ueda*,
S. Kobayashi*, K. Takatoh**Tokyo Univ. of Sci., Yamaguchi, Japan**Toyo, Japan

We investigate the long-term image degradation of LCDs caused
by ionic impurities which is intentionally added to a host nematic
LC material. Here we use two kinds of illustrative impurities:
4-(Dimethylamino) pryidine and Stearoyl chloride. It turns out that these
impurities lead to different kinds of image degradation of LCDs.
LCTp1 - 9L

Alignment of Rod-Disc Molecule by AC Electric
Field
S.-E. Kim, J. H. Jung, E. K. Song, K. S. Ha, S. H. Lee,
K.-U. Jeong
Chonbuk Nat. Univ., Korea

Molecular orientation of chemically linked rod-disc liquid-crystalline inan anti-parallel rubbed LC cell was investigated under vertically appliedalternative current electric ﬁelds. It was concluded that molecular
frustrations under the vertical AC electric ﬁeld occurred as a result of
the competition among rods attached to both sides of the disc.
LCTp1 - 10L Direct Observation of Biaxiality in a Thermotropic
Compound Through Measurement of Electro-Optic
Characteristics
B. W. Park, D. H. Song, H.-B. Kwon, E.-J. Choi, J. C. Kim,
T.-H. Yoon
Pusan Nat. Univ., Korea*Kumoh Nat. Inst. of Tech., Korea

We investigated biaxiality of a thermotropic compound through themeasurement of its electro-optic characteristics. We observed the
U-shaped behavior in the V-T curve of the compound, which may be
attributed to the biaxiality of the compound.

SID 2011
International Symposium, Seminar and Exhibition
May 15-20, 2011
Los Angeles, California, U.S.A.
20

Wednesday

December 1

LCTp1 - 11L All-Optically Controllable Random Laser Based on a
Dye-Doped Liquid Crystal Added with a
Photoisomerizable Dye
C.-R. Lee, J.-D. Lin, P.-Y. Huang, T.-S. Mo*, S.-Y. Huang**Nat. Cheng Kung Univ., Taiwan*Kun Shan Univ. of Tech., Taiwan**Chung Shan Medical Univ., Taiwan

LCTp1 - 12L Fundamental Properties of Extremely Thick PDLC
by Using Porous PMMA Materials
T. Ito, R. Ito, M. Honma, T. Nose
Akita Pref. Univ., Japan
Polymer dispersed liquid crystal (PDLC) is investigated by using
nematic liquid crystal and porous PMMA materials to attain millimeterwave (MMW) and/or terahertz-wave (THz) LC control devices.
Extremely thick porous PMMA materials are successfully constructedby phase separation in ethanol/water solution and their morphology areobserved by SEM.
LCTp1 - 13L Physical Property Improvement of Coatable
Polarizer by Photocurable Lyotropic LC Solution
Y.-G. Kim, Y.-J. Bae, K.-U. Jeong, S.-H. Shin*, M.-H. Lee
Chonbuk Nat. Univ., Korea*Korea Inst. of Ind. Tech., Korea

We report new preparation method of coatable polarizer fromphotocurable lyotropic chromonic liquid crystal solution. Thin ﬁlm
polarizer was prepared by coating a photocurable solution ofperylenediimide in the chromonic nematic phase with subsequent
photocuring. The new method provided various advantages such as
excellent coating characteristics and improved mechanical/chemical
stability.

Asia Display 2011
Kunshan, China
21

LCT

This study investigates an all-optically controllable random laser
in a dye-doped liquid-crystal (DDLC). The all-optical controllability
is attributable to isothermal N I phase transitions of LCs due
to trans cis isomerizations of azo-dye, which can vary spatial
ﬂuctuations of dielectric property of LCs, subsequently change thelasing intensity of the random laser.

Wednesday

December 1

LCTp1 - 14L Distributed Feedback Laser with Optoelectronic
Tunability in Dye-Doped Cholesteric Liquid Crystal
with Coated Photoconductive Layer
C.-R. Lee*, Huang S.-C.*, S.-H. Lin*, Z.-Y. Lin*,
S.-Y. Huang**,***, T.-S. Mo*****Univ. of Electro-Optical Sci. & Eng., Taiwan**Univ. of Optometry, Taiwan***Univ. of Ophthalmology, Taiwan****Univ. of Elect. Eng., Taiwan

This work investigates, for the ﬁrst time, an optoelectronically-tunabledistributed feedback laser that is based on a planar DDCLC cell witha coated photoconductive (PC) layer. The CLC reﬂection band andthe lasing wavelength of the DDCLC can be tuned by optoelectronicaleffect.
13:20 - 16:20

Poster/A.I. Room

Poster LCTp2: LC Alignment
LCTp2 - 1

Photoalignment Properties of 2- and3-Thienylacrylates Bearing Laterally FluorinatedAzobenzene Moieties
G. Hegde, D. Chambers-Asman**, A. V. Matharu*,
L. Komitov
Gothenburg Univ., Sweden*Nottingham Trent Univ., UK**Univ. of York, UK

The photoalignment properties of thin ﬁlms made from several azocontaining thiophene-based acrylate is reported. Inclusion of a lateral
ﬂuoro-substituent(s) provides excellent photo alignment ability whereas
the non-ﬂuorinated counterpart tends to give unsatisfactory alignment
quality. The study showed that 3-substituted thiophenes give better
photoalignment quality than their 2-substituted thiophene isomers
counterparts.
LCTp2 - 2

Photoalignment Ability of Thin Films ofBishydrazones Derived from 3,4Dipropyloxythiophene
R. A. Alla, G. Hegde, K. Ravi*, A. V. Adhikari*,
K. A. Krishnamurthy*, L. Komitov
Gothenburg Univ., Sweden*Nat. Inst. of Tech., India

Photoalignment LC promoted by thin ﬁlms of bishydrazone derived
from 3, 4 dipropyloxythiophene is studied. Results show thatbishydrazone without methyl group in their structure is promoting
planar alignment parallel whereas the ones with methyl group in
the structure are promoting planar alignment perpendicular to lightpolarization direction.

22

Wednesday
LCTp2 - 3

December 1
Investigation of the Photoalignment Effect of
1,3,4-Oxadiazoles Bearing 2-Fluoro-4-Methoxy
Phenyl Moiety
R. A. Alla, G. Hegde, A. M. Isloor*, C. B**, P. Shetty***,L. Komitov
Gothenburg Univ., Sweden*Nat. Inst. of Tech., India**Syngene Int., India***Manipal Univ., India

LCTp2 - 4

Uniformity Enhancement of LC Inorganic Alignment
Layer Deposited by the Obliquely Oriented
Incidence Direction of Sputtering
J. Kim, G.-J. Lee, K.-J. Yang, H.-K. Lyu, B.-D. Choi
Daegu Gyeongbuk Inst. of S&T, Korea

An inorganic LC alignment layer is widely investigated because ofthermal and photochemical stability of LC alignment layer. For uniform
LC alignment layer, we compared the conventional oblique deposition
with 2-step oblique deposition method by sputtering techniques.
LCTp2 - 5

Hysteresis Reduction in EO Characteristics of
Photo-Aligned IPS-LCDs with Polymer-SurfaceStabilized Method
Y. Nagatake, Y. Iimura
Tokyo Univ. of A&T, Japan

An In-Plane-Switching (IPS) LCD manufactured using a photoalignment [PA] method appears the hysteresis at EO performance. In
this paper, to solve the problem in PA method, we used a polymersurface-stabilized (PSS). We have demonstrated a PA method
combined to a PSS method is a useful and attractive LC alignment
method.

IDW Best Paper Award
This award will go to the most outstanding paper
selected from those presented at IDW ’10.
The 2010 award winners will be announced on the
IDW website: http://www.idw.ne.jp/award.html
23

LCT

A new series of 1,3,4-oxadiazole derivatives containing 2-ﬂuoro4-methoxy moiety were synthesized by reﬂuxing mixture of acid
hydrazide 3 with different aromatic carboxylic acid. Photoalignment
studies were performed which indicates that the position of ﬂuorine
plays vital role in promoting planar alignment either parallel orperpendicular to the light polarization direction.

Wednesday
LCTp2 - 6

December 1
Effect of Photocurable Monomers on Homeotropic
LC Alignment Behaviors of LC/Photocurable
Monomer System
J. M. Lee, H. Kang*, J.-H. Lee, J. S. Park, J.-C. Lee*,D. Kang
Soongsil Univ., Korea*Seoul Nat. Univ., Korea

We have investigated the effect of photocurable monomers on
homeotropic liquid crystal (LC) alignment properties in an LC/
photocurable monomer system through UV irradiation. Different
homeotropic LC alignment behaviors and electro-optical performanceswere observed depending on the type and concentration ofphotocurable monomers and UV irradiation time.
LCTp2 - 7

LC Alignment on Micrograting Structures
Photofabricated from Photo-Polymerizable LCs
A. Tsuno, H. Yoshida, H. Kubo, A. Fujii, M. Ozaki
Osaka Univ., Japan

Coexistance of geometric and surface orientation was preparedthrough the fabrication of micrograting from photo-polymerizableliquid crystals via two-photon excitation direct laser writing.
Anchoring energies which were stronger by a factor of 10 wereobtained compared to those fabricated from a non-liquid crystalline
photopolymer.
LCTp2 - 8

Control of Pretilt Angle and Formation of Bistable
Surface by Depositing Alignment Materials by
Utilizing an Electro-Spray Deposition Method
Y. Kudoh, Y. Nakanishi, T. Nakano, S. Saito, T. Takahashi
Kogakuin Univ., JapanAn inﬁnite number of minute domains which consist of two kinds ofalignment materials were formed on substrate surfaces by the ESD
method. The amount of spouted solution of alignment material was
varied to control the pre-tilt angle or to give bistable characteristic forthe nematic LC cell.
LCTp2 - 9L

Alignment of Liquid Crystal on Ion Beam Treated
ITO Surface Directly without PI Coating
S. Hwang, J. H. Lee, H. K. Shin, T.-H. Yoon, J. C. Kim
Pusan Nat. Univ., Korea

We propose a liquid crystal (LC) alignment method that can align LC
molecules on ion beam treated indium-tin-oxide (ITO) surface. We
found that the exposure energy and time need to be over 200 eV and
10 s, simultaneously, for a high quality homogeneous alignment on the
ITO surface.

24

Wednesday

December 1

LCTp2 - 10L Selection of Easy Axis by Liquid Crystal on Rubbed
PVCi Surface
R. Yamaguchi
Akita Univ., Japan
We reported that LCs with and without polar groups aligned
perpendicular and parallel to a rubbing direction on a rubbed PVCi
surface, respectively. Easy axis control of the PVCi was realized
by mixing LCs and an alignment patterning was successfully
demonstrated by exposing with unpolarized UV light.
13:20 - 16:20

Poster/A.I. Room

Poster LCTp3: Characterizations
LCT

LCTp3 - 1

Mechanism for Lattice-Shaped Mura in TFT-LCD
B. C. Woo, K. H. Kim, J. S. Kim, W. H. Kim, S. Y. Han
Samsung Elect., Korea

Mechanism for lattice-shaped mura is proposed by characterizing theoptical properties of LC showing different transmission. The edge in
LC droplet exposed in air evaporated more rapidly. These result in
the higher concentration of polar singles in edge of dotted LC droplet,leading to the higher Δn and higher transmittance.
LCTp3 - 2

Characterization of Vertical Alignment Film by X-ray
Reflectivity
I. Hirosawa, T. Koganezawa, H. Ishii*
Japan Synchrotron Radiation Res. Inst., Japan*Nissan Chem. Inds., Japan

Existence thin and low density top layer at surface of VA polyimide
ﬁlm, which was considered to be side chains, was detected by X-ray
reﬂectivity. Furthermore, high density layer about 2 nm in thick justbelow the top layer was found.
LCTp3 - 3

Measurement of Optical Parameters for Birefringent
Film Stack
H. T. La, T. Sato
ZEON, JapanWe described a method for measuring the optical parameters ofbirefringent stacks consisting of two optical ﬁlms. The method wasapplied to a stack sample which is consisted of two stretched plasticﬁlms as an example.

25

Wednesday
LCTp3 - 4

December 1
Simultaneous Measurement of Elastic Constantsand Anchoring Energy of Homeotropic andHomogeneous Nematic LC Cells by a Capacitance
MethodK. Iwaya, H. Naito, H. Ichinose*, M. Klasen-Memmer**,
K. Tarumi**
Osaka Pref. Univ., Japan*Merck, Japan**Merck KGaA, Germany

We have proposed a method for determining simultaneously elastic
constants and anchoring energy of nematic liquid crystal (NLC) cellsby measuring capacitance – voltage characteristics. The applicabilityof thepresent method has been demonstrated in both homeotropic andhomogeneous NLC cells.
LCTp3 - 5

Exact Modeling for Nucleation of Defects by Using a
Fast Q-Tensor Method
W. S. Kang, S. H. Hur, H. J. Yoon*, G. D. Lee
Dong-A Univ. of Elect. Eng., Korea*Sanayi Sys., Korea

We apply the surface anchoring energy term to the fast Q-tensor
method. Also, we investigate the value of the order parameter S aroundthe surface layer and the generation and motion of defects in the pi cellusing the fast Q-tensor method with weak anchoring strength.
LCTp3 - 6

Temperature Dependence of Leslie Viscosity
Coefficients of Nematic LC with Negative Dielectric
Anisotropy Determined from Transient Current
Using a Genetic Algorithm
M. Oka, K. Iwaya, Y. Iwata, H. Naito, M. Inoue*,
H. Ichinose**, M. Klasen-Memmer***, K. Tarumi***Osaka Pref. Univ., Japan*Toyo, Japan**Merck, Japan***Merck KGaA, Germany

We have derived the analytical expressions of the transient current
in homeotropic nematic liquid crystal cells and have determined the
Leslie viscosity coefﬁcients by ﬁtting the analytical expressions to
the experimental data using a genetic algorithm. The applicability of
the algorithm is demonstrated by determining the Leslie viscosity
coefﬁcients at different temperatures.

26

Wednesday
LCTp3 - 7

December 1
Determination of Polar Anchoring Energy Based on
SOITE Method by Combining a Voltage Correction
K. Tachibana, K. Goda, Y. Kaneko*, M. Inoue*,
M. Kimura, T. Akahane
Nagaoka Univ. of Tech., Japan*Toyo, Japan

We proposed a method for determining the surface polar anchoringenergy coefﬁcient of nematic liquid crystal cell based on symmetricoblique incident transmission ellipsometry (SOITE) method in which
the applied voltage diminution is compensated. The validity of thistechnique was conﬁrmed by the numerical calculations.
Poster/A.I. Room

Poster LCTp4: LCD Modes
LCTp4 - 1

New Pixel Design for PVA Mode LCD Color Shift
Improvement
C.-H. Huang, C.-C. Chen, H.-C. Liang*
Chunghwa Picture Tubes, Taiwan*Chung Yuan Christian Univ., Taiwan

Off-axis image quality of MVA Mode LCD has been improved by new
pixel design t. The simulated result shows that gamma shift at large
view angle (i.e. 60 deg) of new Pixel design is reduced 40% comparedwith conventional PVA design, resulting in decreased color shift at offaxis viewing positions.
LCTp4 - 2

Viewing Angle Switching LCDs Using Large
Optically Anisotropic Behaviors of Twisted-Nematic
LCs
C.-H. Lin, R.-H. Chiang, M.-L. He, C.-W. Chen, C.-T. Kuo
Nat. Sun Yat-Sen Univ., Taiwan

This work proposes a viewing angle switching (VAS) panel using
twisted-nematic liquid-crystals (TN-LCs). With the proposed panel, a
display is only perceived clearly at a downward direction in a narrowviewing angle mode to ensure high privacy protection. Additionally, theproposed VAS panel achieves a high transmittance of 95%.
LCTp4 - 3

Comparison of the Cell Process Margin at Each LC
Mode
Y. B. Lee, K. H. Park, S. K. Lee
BOE-HF, China

In this paper, we could know the cell process margin at each LC
Modes. We compared the T-V characteristics of pre-tilt and cell gap
deviation by LC simulator. We conﬁrmed that the FFS modeʼs cellprocess margin is wider than other wide viewing angle LC Modes.

27

LCT

13:20 - 16:20

Wednesday
LCTp4 - 4

December 1
Advanced Twist Nematic LCD
I.-F. Wang, F. W. Kuo, G.-S. Chao, C.-H. Yu
Hannstar Display, Taiwan

An new advanced twist nematic (ATN) liquid crystal display mode
which perform wide viewing angle and high contrast has been
demonstrated. The ATN is unlike traditional TN mode that exhibits
normally-white state and low contrast ratio. It exhibits normally-blackstate and contrast ratio exceeds 2000:1.
LCTp4 - 5

Switching between Bistable States by Applying
Vertical and Horizontal Fields in Chiral TiltedHomeotropic Nematic LC Cell
T. Nakadate, T. Takahashi, S. Saito
Kogakuin Univ., Japan

Fundamental properties in the bistable chiral tilted-homeotropic
nematic (BCTHN) LC device consisting of a nematic LC with a negative
dielectric anisotropy are investigated. The switching between bistablestates in the (0.2π) and (-π/2, 3π/2) types of BCTHN devices byapplying a vertical ﬁeld and a horizontal ﬁeld is investigated.
LCTp4 - 6

47-in. Full HD Transparent Display without Polarizer
Using S-IPS Mode LCD Panel
S. H. Park, E. D. Kim, J. S. Park, J. K. Kang, K. H. Lee,
M. C. Jun, I. J. Jung
LG Display, Korea

Transparent 47-in. full HD S-IPS mode with backlight system has beendeveloped. This technology is removing polarizer to make transparent
display in IPS mode and design polarized light from TBLU. It is possible
to reproduce the window displays by turning on TBLU at indoors andturning off TBLU at outdoors.
LCTp4 - 7

Improvement of Correlated Color Temperature
Tracking in In-Plane Switching LCD
S.-H. Ji, S. H. Han, J. M. Yoon, I. C. Park, M. C. Jun,
I. J. Jung
LG Display, Korea

We introduce a method to improve tracking of correlated color
temperature (CCT) in the in-plane switching LCD. On the basis of thesimulation, we fabricated 17-in. IPS LCD panel to verify the opticalcharacteristic. It exhibits more than 50 percent decrease compared tothe conventional IPS LCD in the ∆CCT.

28

Wednesday
LCTp4 - 8

December 1
Reverse Twist Nematic Mode on Stacked Alignment
Layer Method
S. I. Jo, S. W. Choi, A. R. Yoon, S. G. Lee, Y.-J. Lee,
C.-J. Yu, J.-H. Kim
Hanyang Univ., Korea

We propose an inverse twisted nematic mode without chiral dopant.
Using a doubly stacked alignment layer, the enhancement of azimuthal
anchoring strength is obtained on the vertical alignment layer and gives
rise to a stably twisted conﬁguration in the presence of an applied
voltage.
LCTp4 - 9

Low Gray Level Color Shift in Twisted Nematic LCD

LCTF. G. Xu, L. B. Mao, Y. W. Chiu, D. C. Chung, T. S. Jen
InfoVision OptoElect., China
Twisted Nematic (TN) TFT LCD has color shift issue at oblique
viewing angles. Cell retardation and back light were investigated inour experiments, color shift will be decreased with the increasingof retardation, reddish or blueish which came from the inﬂuence of
backlight spectrum.
LCTp4 - 10

Minimize Gamma Variation in TFT-LCD
F. G. Xu, L. B. Mao, Y. W. Chiu, D. C. Chung, T. S. Jen
InfoVision OptoElect., China

The inﬂuence of cell parameters and Analog VDD (AVDD) voltage to
TFT-LCDʼs Gamma were investigated. According to the experimental
results, pretilt angle and AVDD voltage are key parameters to Gamma,
the twist angle and cell gap also have impacts on it. These data areimportant reference information to process ability control.
LCTp4 - 11

Low-Voltage-Driving LC Lens
M. Ye, B. Wang, M. Uchida, S. Yanase, S. Takahashi,
M. Yamaguchi*, S. Sato
Akita R&D Ctr., Japan*Mitsubishi Materials Elect. Chems., Japan

An approximately 1 µm thickness thin ﬁlm of insulator is introduced intoa liquid crystal lens cell replacing the substrate between the patterned
electrode and the liquid crystal layer. The distance between electrodes
decreases drastically, and the driving voltages drops from several tensof volts to only several volts.

29

Wednesday
LCTp4 - 12

December 1
Tunable LC Lens Using Stacked Alignment Layers
F. Fan, M.-C. Tseng, A. Murauski, H.-S. Kwok,
V. Chigrinov
Hong Kong Univ. of S&T, Hong Kong

A tunable liquid crystal (LC) lens is achieved using stacked alignment
layers. The stacked alignment layer consists of photoalignablehomogeneous alignment material and rubbed vertical alignment
material. By exposing the stacked alignment layer under UV laser, alens-like phase retardation proﬁle is got due to the variable pretilt angle.
LCTp4 - 13

Four Primary-Color Pixel Design for Wide Color
Gamut
Y.-H. Kim, S.-H. Han, S. H. Ji, H. S. Lee, J. M. Yoon,
I. C. Park, M. C. Jun, I. J. Jung
LG Display, Korea

We developed a multiple primary color LCDʼs (Red, Green, Blue,
Cyan). The Color Gamut was extended 103% of NTSC standard. And,
we ﬁnd the optimum solution of asymmetric 4 Primary-Color structure
minimizing luminance decreasing ratio.
LCTp4 - 14L Optical Configuration for a Dual Mode Liquid
Crystal Display with Infinite Memory Time and HighContrast Ratio
T. Kim, J. H. Lee, C. G. Jhun*, S.-B. Kwon*, T.-H. Yoon,
J. C. Kim
Pusan Nat. Univ., Korea*Hoseo Univ., Korea
We propose an optical conﬁguration for a dual mode liquid crystal
display with a d/p ratio of 0.25 for inﬁnite memory time and π-twist state
as dark state for high contrast ratio. As a result, we obtained a highcontrast ratio of 250:1.
LCTp4 - 15L Optical Design of a Bistable TN Cell
D. H. Song, J. H. Lee, K.-H. Kim, J. C. Kim, T.-H. Yoon
Pusan Nat. Univ., Korea
Liquid crystal shutter glasses are used in conjunction with a display
screen to create the illusion of a three dimensional image. In this paper,
we introduce TN mode fabricated by a dual frequency liquid crystal(DFLC) material with a fast response to remove the ﬂicker.

30

Wednesday

December 1

LCTp4 - 16L Fast Switching of In-Plane Switching Cell with
Pixel-Isolating Polymer Walls
J.-W. Kim, D. H. Song, J. C. Kim, T.-H. Yoon
Pusan Nat. Univ., Korea
We propose the in-plane switching liquid crystal mode with the pixelisolating polymer wall structure using reactive mesogen. With the multidimensional LC alignment effect, the proposed mode shows faster
response time characteristics than the conventional IPS mode without
any loss of the transmittance.
LCTp4 - 17L Tunable Fresnel Lens Using Surface Modification of
Vertical-Aligned Liquid Crystals

LCT

K. Lin, S. Jeng*, T. Chen, S. Hwang
Nat. United Univ., Taiwan*Nat. Chiao Tung Univ., Taiwan

A simple method to make a switchable liquid crystal Fresnel lens withhigh diffraction efﬁciency and a low driving voltage was proposedby photo-induced surface modiﬁcation of vertical alignment layer.
Remarkable diffraction efﬁciency close to the theoretical limit was
detected and demonstrated to depend sensitively on the applied
voltage.
LCTp4 - 18L Fundamental Performance of Birefringence Imaging
System Using a Liquid Crystal Phase Shifter
T. Nose, Y. Aizawa, K. Okano, H. Muraguchi, N. Ozaki,
M. Honma, R. Ito
Akita Pref. Univ., Japan
OCB cell is combined with a polarization microscope to construct
a birefringence imaging system by introducing the phase shifting
interferometry technique. Basic performance of the system isinvestigated by using a tiny biological sample and quantitativebirefringence images are successfully demonstrated.
LCTp4 - 19L Improvement of EO Characteristics for the
Reversed-TN LCD by Using Polymer Wall
Y. Ohike, Y. Toko*, S. Saito, T. Takahashi
Graduate School of Kogakuin Univ., Japan*Stanley Elec., JapanThe Reversed-TN LCD has a low threshold voltage and a steep
sharpness characteristic is known when the d/P0 is increased.
However, the reversed state is unstable for operating. In this study,
polymer walls are formed in the cell to stabilize the reversed state andimprovement of sharpness characteristic is attempted.

31

Wednesday

December 1

LCTp4 - 20L Passive Matrix Driving Scheme for Bistable Chiral
Splay Nematic Liquid Crystal Display with CrossTalk-Free
Y. Jin, Z. Hong, J. G. Ying, C. G. Jhun, S. B. Kwon,
J. H. Lee*, T. H. Yoon*, J. C. Kim*
Hoseo Univ., Korea*Pusan Nat. Univ., Korea
The BCSN mode is one of promising mode, because it can be
operated both as a storage and a monostable device. In this paper,
we propose the passive matrix driving scheme for BCSN liquid crystal
display. With a dual frequency liquid crystal material, we can suppress
the cross-talk effect.
LCTp4 - 21L The Novel Applications and Research of Axial
Symmetric Dye-Doped Liquid Crystal Films via
Photoalignment Method
S.-W. Ko, A. Fuh, T.-H. Lin*
Nat. Cheng Kung Univ., Taiwan*Nat. Sun Yat-Sen Univ., Taiwan
The research of axially symmetric dye-doped liquid crystal ﬁlm isdemonstrated in paper. Axially symmetric devices were used generally
in symmetric optics, such as converting polarized light into axially,azimuthally or vortically light. The novel applications have also beenpresented in this paper, as polarization-independent liquid crystal lensand tunable donut beam.
LCTp4 - 22L Fast Response Time in Twisted Nematic Mode with a
Dual Frequency Liquid Crystal Material for Shutter
GlassesS. H. Han, J. G. Ying, Y. Zhang, Z. Hong, Y. Jin, Y. W.
Seo, S. S. Shin, C. B. Moon, C. G. Jhun, M. R. Shin*,
J. S. Lim*, J. R. Seo*, B. K. Seo*
Hoseo Univ., Korea*Bokja Girl’s High School, Korea
Liquid crystal shutter glasses are used in conjunction with a display
screen to create the illusion of a three dimensional image. In this paper,
we introduce TN mode fabricated by a dual frequency liquid crystal(DFLC) material with a fast response to remove the ﬂicker.

32

Wednesday

December 1

LCTp4 - 23L Fast Switching of Silica Nanoparticle-Doped Hybrid
Aligned Nematic Device
C.-Y. Huang, C.-C. Lai, Y.-J. Huang, J.-H. Chen,
H.-C. SongNat. Changhua Univ. of Education, Taiwan
We improve the response time of the silica nanoparticle-doped HAN
cell. A low-frequency AC pulse-voltage driving scheme accelerates
the LC relaxation, decreasing the response time of the cell. In themultistable mode, the obtained response time is ~ 23 ms, which is ~4% of our previous result.
13:20 - 16:20

Poster/A.I. RoomLCTp5 - 1

LCT

Poster LCTp5: Transflective LCDs
Extraordinarily Wide-View and Wide Spectral
Bandwidth Transflective LCDs
C.-H. Lin, R.-H. Chiang, M.-L. He, C.-W. Chen
Nat. Sun Yat-Sen Univ., Taiwan
This work presents a simple compensation method for widening
the viewing angle of transﬂective liquid-crystal displays (TR-LCDs).
Based on the proposed compensation method, the compensated TRLCDs exhibit a wide spectral bandwidth and a viewing angle of 80o forcontrast-ratio (CR) >100:1 and >30:1 in transmissive and reﬂectivemodes, respectively.
LCTp5 - 2

A New Double-Cell Gap Transflective OCB-LCD with
In-Cell Compensation Film
I. Fukuda, Y. Sakamoto, T. Ishinabe*, T. Uchida**
Kanazawa Inst. of Tech., Japan*Tohoku Univ., Japan**Sendai Nat. College of Tech., JapanA new double-cell-gap transﬂective OCB-LCD with an in-cellcompensation ﬁlm was designed to improve response time andviewing-angle performance of transﬂective displays. We veriﬁedthat wide viewing angle and high luminance could be achieved by
optimizing design parameters of the LCD, even if the on voltage islowered to 3 V.

33

Wednesday
LCTp5 - 3

December 1
Design of Transflective LCD Using a Reflective
Polarizer without Sub-pixel Division
H.-J. Jin, K.-H. Kim, J. C. Kim, B.-H. Cheong*,
H.-Y. Choi*, S. T. Shin*, T.-H. Yoon
Pusan Nat. Univ., Korea*Samsung Elect., Korea

We propose a LCD mode switchable between reﬂective andtransmissive modes without sub-pixel division. By placing a reﬂective
polarizer between the two LC layers, we can employ the entire pixel
area for both reﬂective and transmissive modes. The proposed
structure can have transmittance and reﬂectance higher thanconventional transﬂective LCDs.
LCTp5 - 4

Transflective LCD Using Two Modes
M. S. Park, B. C. Jang, J. Yi, J. H. Kwon, J. S. Gwag
Yeungnam Univ., Korea

We present a transﬂective liquid crystal display using two modes thatare splay state and 180˚ twisted state obtained from the pi-cell. Here,the splay state operated by horizontal ﬁeld is used for transmissive
part, while the 180˚ twisted state with vertical ﬁeld is used for reﬂective
part.
LCTp5 - 5Single Gap Transflective Vertically Aligned LCD
D. W. Kwon, D. H. Kim, S. H. Lim, S. J. Shin, J. H. Her,Y. J. Lim, S. H. Lee
Chonbuk Nat. Univ., Korea

A transﬂective liquid crystal display associated with surface polymerstabilized vertical alignment mode is proposed. The retardation ofliquid crystal layer and its azimuthal tilting direction are determined via
polymerization of reactive mesogen. As a result, new device with highperformance is achieved without using any compensation ﬁlm or in-cell
retarder.
LCTp5 - 6

Withdrawn----- Break -----

16:40 - 18:05

Room 502

LCT1: Photo Alignment Technology
Chair:
Co-Chair:

34

H. Okada, Univ. of Toyama, Japan
I. Hirosawa, Japan Synchrotron Radiation Res. Inst.,
JapanWednesday
LCT1 - 1:
16:40

December 1

Invited The UV2A Technology for Large Size LCD-TV
PanelsK. Miyachi, N. Kimura, Y. Yamada, S. Mizushima
Sharp, JapanWe developed the new photo-alignment technology for the large size
LCD-TV panel and we successfully applied it to our generation-ten
factory. The transmittance, contrast ratio and response time of ourpanels are drastically improved to evolve the LCD-TVs to the next
generation.
LCT1 - 2
17:05

Analysis and Implementation of PI Less Technology
Applied in TFT-LCDs

LCTC. W. Su, J. T. Lien
Chunghwa Picture Tubes, Taiwan
In PI-less technology, we donʼt need PI materials and solvent materials
that can attain green process. Besides, we donʼt need complex
fabrication and expensive equipment which can achieve saving process
time and cost down. The ﬁnal results have some advantages, such as
high contrast ratio, high brightness, viewing angles. Finally, we havesucces-sively developed a new cell process without PI process for VA
mode.
LCT1 - 3

Withdrawn

LCT1 - 5L
17:25

Advanced UV Alignment Technology in IPS-LCD for
the Improvement of Color and Viewing Angle
H. J. Ahn, J. W. Woo, C. H. Kwak, W.-S. Kim,
M.-S. Yang, Y.-K. Hwang, I.-J. Chung
LG Display, Korea

The advanced UV alignment technology was developed to overcome
the drawbacks of conventional IPS-LCD. The prototype panel byusing UV technology shows wider viewing angle and low color
shift compared with the rubbing method. It is thought that thesymmetrical LC orientation with zero pretilt angle would induce theseenhancements.
LCT1 - 4
17:45

Surface Control with Reactive Mesogen for Fast
Switching LCD Modes
Y.-K. Moon, M.-G. Choi, T.-M. Kim, J.-H. Jeong,
Y.-J. Lee, C.-J. Yu, J.-H. Kim
Hanyang Univ., Korea

We propose an advanced method to improve response time
characteristics of the liquid crystal displays (LCDs) through stacking
reactive mesogen (RM) on the alignment layer. The RM polymers
enhance the surface anchoring strength, and thus the response time of
the LCDs was signiﬁcantly improved, especially in relaxation time.
Author Interviews
18:00 – 19:00
35

Thursday

December 2
Thursday, December 2

9:00 - 10:25

Room 502

LCT2: High Performance LC Technology
Chair:
Co-Chair:

M. Inoue, Toyo, Japan
K. Miyachi, Sharp, Japan

LCT2 - 1:
9:00

Invited Analysis of Compare Ion Density with Image
Sticking Level on Real TFT-LCD Panels
M. Kwak, H. Kwon, D. Han, J. Jeon, J. Park, S. Choi,
Y. Choi, D. Koo
LG Display, Korea

With the use of Ion Density measuring method, the amount of moving
ions within TFT-LCD panel was measured. As a result, the mount ofmoving ions within the panel affected image sticking, and also themeasured amount equalled the image sticking evaluation result.
LCT2 - 2
9:25

Effect of Process and Material on TFT-LCD’s Image
Sticking
Z.-F. Su, S.-N. Zhang, L.-B. Mao, Y.-W. Chiu,
D.-C. Chung, T.-S. Jen
InfoVision OptoElect., China

Effects of the process parameter and material on the image sticking
have been investigated through experiments. The experimental results
show that rising PI pre-bake temperature, reducing cell process stepsof color ﬁlter and shorting the Q-time and the color resist material withlower VHR are useful in image sticking improvement.
LCT2 - 3
9:45

Vertical Alignment of LC with Pretilt by an Ordering
Effect of Alkylsiloxane Self-Assembled Monolayers
on an Ion-beam-Irradiated SiO2 Surface
J.-S. Park, K.-Y. Seok, S.-W. Hwang*, J.-C. Kim*,
T.-H. Yoon*, J.-H. Kim**, H.-R. Kim
Kyungpook Nat. Univ., Korea*Pusan Nat. Univ., Korea**Hanyang Univ., Korea

We investigated a vertical alignment (VA) method of liquid crystals(LCs) by using Akylsiloxane self-assembled monolayers (SAM)
prepared on an anisotropic surface, which was produced by oblique
ion beam irradiation. Depending on the surface anisotropy produced on
the underlying SAM layer, the pretilt of LC in VA can be controlled. With
our method, multi-domain VA LC conﬁguration can be easily and stably
obtained by controlling the ion-beam irradiation conditions.

36Thursday
LCT2 - 4
10:05

December 2
Photo Patterned Micro Polarizer
T. Du, L. Yao, F. Fan, V. Chigrinov, H. S. Kwok
Hong Kong Univ. of S&T, Hong Kong

In this paper, a photoaligned micro patterned polarizer has been
proposed, which is capable of making patterns down to the size of
2 µm. The patterned polarizer consist of three stacked layers including
a conventional linear polarizer, a quarter wave plate and a photo
patterned quarter wave plate.
----- Break ----10:40 - 11:55

Room 502

LCT

LCT3: New Functional LCDs
Chair:
Co-Chair:M. Kwak, LG Display, Korea
K. Ishikawa, Tokyo Inst. of Tech., Japan

LCT3 - 1
10:40

Energy Efficient LCDs (e2-LCDs) Using Photonic
Crystal Structure Based on Cholesteric LC Materials
M. Suzuki, N. Fujiwara
Merck, Japan

Photonic crystals based on cholesteric liquid crystal materials dopedwith ﬂuorescent dyes have been developed as simultaneous lightemitting and reﬂecting layer. Novel energy efﬁcient LCDs having thephotonic crystal layers can utilize not only backlight but also ambient
light.
LCT3 - 2
11:00

A Novel Structure of Full Color Cholesteric LCD
C.-H. Hsieh, Y.-S. Tsai, Y.-C. Lai, Y.-C. Liao, K.-T. Chen,
C.-C. Lai, J.-W. Shiu, G.-W. Wu, S.-Y. Fuh
ITRI, Taiwan

We provided a high reﬂectance and great color performance of the
new structure design for full color cholesteric LCD. This new structure
can provide the reﬂectance close to the triplet stacked ChLCD andwider color gamut but only required two ChLC layers and much simpler
driving system hardware.
LCT3 - 3
11:20

The Simulation of Single Layer Ch-LCD Panel
Design and Color Adjustment Evaluation
M.-Y. Lu, K.-J. Hu, T.-T. Chang, Y.-Y. Lin, Y.-H. Bai,
W.-J. Li
ITRI, Taiwan

The capability of color exhibition and its accuracy on ChLCD areinﬂuenced by the spectrum characteristic of material used, circuit
driver and manufacturing process advancement. However, it cost a lot
on experiment during development stage. Therefore, color simulation
can assist to reduce cost and indicate correct direction of researchdevelopment.
37

Thursday
LCT3 - 4L
11:40

December 2
In-Plane Switching of a Bent-Core LC(PAL1) with
Negative Dielectric Anisotropy in the Homeotropic
Cell
Y. Jang, J. K. Vij, C. Tschierske*
Trinity College Dublin, Ireland*Martin Luther-Univ., Germany

Electro-optic behavior of bent-core LC(PAL1) in the nematic phasehas been studied under vertical alignment. Optically biaxial nematic
phase (Nb) is evidenced by measurement using a photoelastic
modulator(PEM) and the material in this phase is switchable throughthe minor director with an in-plane electric ﬁeld.
----- Lunch ----13:20 - 14:40

Room 502

LCT4: High Performance LCDs
Chair:
Co-Chair:M. Suzuki, Merck, Japan
H. Wakemoto, Toshiba Mobile Display, Japan

LCT4 - 1
13:20

Fast Response TN-LCDs Using Ultra Short Pitch LC
Materials
K. Takatoh, M. Akimoto, K. Shinohara, Y. Nakamura,
S. Kobayashi
Tokyo Univ. of Sci., Yamaguchi, Japan

TN-LCDs with LC materials of the pitch length shorter than the twiceof cell width was found to be formed by applying electric ﬁeld to 270
degree STN-LCD possessing splayed twist molecular arrangement andstabilized by using UV curable monomer. The decay time is improved
drastically by using USP TN-LCDs.
LCT4 - 2
13:40

Novel Design of Single Cell Gap Wide-View
Transflective LCD Using Twist Fringe-Field Switch
Mode without Retarder
K.-T. Huang, Y.-W. Hung, K. Chen, L.-L. Huang,
W. C. Fang
HannStar Display, Taiwan

A novel single cell-gap transﬂective liquid crystal display (LCD)
with FFS mode has been proposed. The transmissive region ishomogeneous aligned. And reﬂective region is partial twisted and tilted
to reach single gap design. In addition, the VT and VR curve is similar
by optima pixel electrode width, space, twist and tilt angle in reﬂective
region.
LCT4 - 3

38

Withdrawn

Thursday
LCT4 - 5L
14:00

December 2
Advanced Hybrid FPA Technology for the VA Mode
M. Miyakawa, S. Suwa, T. Isozaki, M. Nakamura,T. UrabeSony, JapanWe developed the advanced Hybrid Field induced Photo-reactivealignment (FPA) technology using FPA alignment material and verticalalignment material. This technology could improve the trade-off
property and realize the faster falling response as well as the lower
black level.
LCT4 - 4
14:20

Newly Developed Reverse Twisted Nematic LCD
Showing Steep Electro-Optical Characteristics

LCT

M. Akimoto, N. Motoishi, M. Nishitateno, Y. Toko*,
K. Takatoh
Tokyo Univ. of Sci., Yamaguchi, Japan*Stanley Elec., Japan
We present a newly developed reverse twisted nematic liquid crystal
display (RTN-LCD) endowed with low pretilt angles. We found that theelectro-optical characteristics of the present low pretilt angle RTN-LCD
is much steep enough to achieve the maximum duty ratio of 1/480 for
multiplex drive.
----- Break ----15:00 - 16:10

Room 502

LCT5: Emerging LC Application
Chair:
Co-Chair:K. Takatoh, Tokyo Univ. of Sci., Yamaguchi, JapanT. Yamaguchi, Chisso Petrochem., Japan

LCT5 - 1
15:00

A Full-Resolution and Glasses-Free 3D Display
Using the OCB-III with a Light Directional Backlight
T. Higano, K. Nakao, Y. Tanaka, H. Takahara, J. Hanari,
H. Wakemoto
Toshiba Mobile Display, Japan

We have developed a full-resolution and glasses-free 3D display withno pseudoscopic image in which the OCB-III mode with black insertionand light directional backlight have been applied. The fast response of
OCB, black insertion and backlight switching unable us to separate theright/left images clearly and achieve low 3D-crosstalk.

39

Thu./Fri.
LCT5 - 2
15:20

December 2/3
Image Quality Simulation of Field Sequential Color
Display with Limited LC Response Time
Y.-S. Huang, H.-L. Hou, W.-C. Sun
AU Optronics, Taiwan

The image quality of ﬁeld sequential color (FSC) with limited LC
response time were simulated by modifying eye-trace integrationof MPRT program; we successfully simulated the color mixing
phenomenon in FSC with real LC case, the color shift caused by slow
LC response can also been demonstrated.
LCT5 - 3L
15:40

High-Speed Liquid Crystal Polarization Modulator
for Time-Multiplexed Stereoscopic 3D Applications
J. Osterman, T. Scheffer*
LC-TEC Displays AB, Sweden*Motif, USA

A high-speed liquid crystal polarization modulator suitable for timemultiplexed stereoscopic 3D applicationsis proposed. By using adouble-cell structure together with a novel driving scheme, polarizationcompensation can be achieved to hide the optical response during
the liquid crystal relaxation process, enabling fast powered switching
between two polarization output states.
LCT5 - 4L
15:55

An Addressing Technique to Drive Blue Phase LCDs
T. Ruckmongathan
Raman Res. Inst. Bangalore, India

Bit slice addressing (BSA) is proposed to preserve color purity ofimages at all angles in fast responding liquid crystal displays withsimple data drivers. About 80% reduction in data driver circuit and an
average 26.9% reduction in backlight power are achieved with BSA!
Author Interviews
18:00 – 19:00

Friday, December 3
9:00 - 10:20

Room 204

LCT6: Nanostructured LC
Chair:
Co-Chair:40

M. Funahashi, Kagawa Univ., Japan
M. Kimura, Nagaoka Univ. of Tech., Japan

Friday
LCT6 - 1
9:00

December 3
Experiment-Based Proposal of Novel Fast-Switching
LCDs Using Field-Induced Isotropic-NematicTransition
M. Kosuge*,**, S. Naemura*, N. Koma**, T. Tsuyuki**,K. Fujimura**Tottori Univ., Japan**Sony Mobile Display, Japan

LCT6 - 2
9:20

Electro-Optic Response of Blue Phases
H. Choi, H. Higuchi, H. Kikuchi
Kyushu Univ., JapanThe relation between electro-optic response and chiral pitch wasinvestigated in blue phase I and II, respectively in detail. The result
also showed that the hysteresis for the transmittance according to theelectric ﬁeld did not appear before the induced phase transition occurs.
LCT6 - 3
9:40

Enhancement of Electro-Optical Performance ofNarrow-Gap TN-LCDs by Doping Newly Synthesized
Nanoparticles
B. Kundu, Y. Shirashi, H. Sawai, K. Takeuchi*,N. Toshima, S. Kobayashi
Tokyo Univ. of Sci., Yamaguchi, Japan*DIC, Japan

By doping newly synthesized nanoparticles of Pγ, b CyD-ZrO2 into thehost media of narrow-gap TN-LCD the reductions of both the thresholdvoltage by ~30% and the response times by 20 – 50% were obtained
at 25oC and 0oC. These effects are analyzed and clariﬁed through amaterial research on NLCs and computer simulation.
LCT6 - 4
10:00

Nanoparticle-Mediated Polyimide for Pretilt Angle
Control of LC Devices
S.-C. Jeng, S.-J. Hwang*, Y.-M. Shieh*, S.-C. Chen*
Nat. Chiao Tung Univ., Taiwan*Nat. United Univ., Taiwan

The pretilt angles θP of LC molecules can be controlled by using
conventional polyimide alignment (PI)doped with Polyhedral Oligomeric
Silsequioxanes (POSS) nanoparticle. The addition of POSS changes
thesurface energy of the PI and generates the variable θP over therange of 0 <θP<90 depending on the POSS concentration.
----- Break -----

41

LCT

The electro-optic effect based upon the electric-ﬁeld-induced isotropicnematic transition was investigated using cells with an appropriate
electrodes-conﬁguration and surface treatment. Its exhibits ahysteresis-free large optical-transmittance change with viewing-angleindependent deep-dark-level and the response times are less than1msec, enabling a novel display featuring fast switching and highimage quality.

Friday

December 3

10:40 - 11:55

Room 204

LCT7: New LCD Design
Chair:
Co-Chair:T. Ishinabe, Tohoku Univ., Japan
S. Komura, Hitachi Displays, Japan

LCT7 - 1
10:40

New MVA Design to Improve Color Washout for
Mobile Applications
Y.-P. Kuo, S.-C. F. Jiang, C.-H. Shih, W.-M. Huang
AU Optronics, Taiwan

Weʼve designed high performance MVA display utilizing different
protrusion ratio in one sub-pixel to improve color washout and GTG
response time. We get better washout performance, and the washout
value improve ratio is 33% lower than conventional MVA and GTG
response time reducing range is 36% lower than conventional MVA.
LCT7 - 2
11:00

Transfer 26-in. WXGA LC-TV from TN to SymmetricalViewing-Angle MVA Mode with Only One-Mask
Change without ITO Slits and Protrusions
H. L. Ong, J. Chou, X. Y. Wang*, Y. Qiao*, Y. W. Chiu*,
D. C. Chung*, T. S. Jen*
Kyoritsu Optronics, Taiwan*InfoVision OptoElect., China

We successfully transferred a 26-in. WXGA LC TV from the low-end TN
to the high-performance AIFF MVA, without protrusions, without ITO
slits, and only changed one TN mask. The AIFF MVA process is highyield and low-cost. The measured transmission of 5.1-5.5% is greaterthan all published MVA and IPS LC TV.
LCT7 - 3
11:20

TFT-LCD with CVA Technologies
H. Zheng, L. Zhou, T.-C. Chung, Y. Qiao, X. Huang,
C. Zeng, D. Zhang, C.-T. Liao, Y.-W. Chiu, T.-S. Jen
InfoVision OptoElect., China

We developed a series of CVA technology for high performance andlow cost LCD TV applications. The CVA shows a high contrast ratio ofover 3500:1, the omni viewing angle performance, and comparatively
better gamma dispersion characteristics by adopting a low cost design
whose CF without the protrusion bump.
LCT7 - 4L
11:40

Fast LC Devices with Lowest Control Voltage
A. Andreev, V. Ezhov*, I. Kompanets, A. Sobolev**
P.N. Lebedev Physical Inst., Russia*STEL, Russia**Megavision, JSC, Russia

Novel FLC cells were developed with the response time of about 30
70 µs under the electric ﬁeld 1.0 2.0 V/µm for 1.0 µm layer thickness(reﬂectance mode) and 1.3 µm (transparent mode). Stereo glasses
with shutters modulating the light with the frequency 200 Hz at 1.5 V
and 1000 Hz at 3.0 V were manufactured.
42

Friday

December 3

Author Interviews
16:20 – 17:20

Supporting Organization:
The Japanese Liquid Crystal Society (JLCS)LCTSID 2011
International Symposium, Seminar and Exhibition
May 15-20, 2011
Los Angeles, California, U.S.A.

IDW Tutorial in Japanese
Tuesday, November 30, 2010
Room 412
Fukuoka International Congress Center
Detailed information is announced at
http://www.sidchapters.org/japan/

IDW ’11
The 18th International Display Workshops
December 7-9, 2011
Nagoya Congress Center
Nagoya, Japan
http://www.idw.ne.jp
43Wednesday

December 1

Workshop on Active Matrix Displays
Wednesday, December 1
15:00 - 16:25

Room 501

AMD1: AM-LCD
Chair:
Co-Chair:

H. J. Kim, Yonsei Univ., Korea
M. Hiramatsu, Toshiba Mobile Display, Japan

AMD1 - 1:
15:00

Invited Characteristics, Their Applications andTrends of LED Backlights
K. Otoi, T. Shinomiya, T. Masuda, H. Murakami,
H. Ichioka, K. Fujiwara, K. Hashimoto, T. Murai
Sharp, Japan

LED backlights are becoming major backlight modules of displays
instead of CCFL backlights. We summarize characteristics of LED
backlights from the viewpoints of LED packages, optical designs,
control systems and evaluations with their applications. Then we referto the trends of LED backlights discussing merits and demerits of thosecharacteristics.
AMD1 - 2
15:25

Modeling and Measurement of Ultra-Low Leakage
Current of a-IGZO TFTs and New Driving Method of
LCDs
H. Godo, A. Miyanaga, K. Kusunoki, K. Toyotaka,
T. Nishi, K. Moriya, S. Fukai, Y. Kubota, K. Wakimoto,
J. Koyama, S. Yamazaki, Y. Oikawa, K. Okazaki*,
M. Sakakura*
Semiconductor Energy Lab., Japan*Advanced Film Device, Japan

We showed that an a-IGZO TFT has ultra-low leakage current bymeasurement. We realized new driving method by taking advantage
of ultra-low leakage current of an a-IGZO TFT. As a result, the power
consumption in displaying images at 1/180 fps is approximately
1/10000 of that at 60 fps.
AMD1 - 3
15:45

Advanced Pixel Potential Shift Driving for Flicker
Reduction
M. Yoshiga, T. Inada, M. Shibazaki, S. Kawata, Y. Matsui,
H. Watsuda, K. Hashimoto, C. W. Lin*, K. Sano*, D. L. Ting*
TPO Displays Japan, Japan*Chimei Innolux, Taiwan

Weʼve successfully developed Advanced Pixel Potential Shift (APPS)
driving for ﬂicker reduction to compensate photo leak voltage loss
through TFT. Furthermore with backlight luminance sensor it is possible
to increase aperture ratio by reducing storage capacitance size. Thus
backlight power reduction is also feasible with newly developed APPS
driving.
44

Wednesday
AMD1 - 4
16:05

December 1
Novel Data Line Sharing Method in AMLCDs forHigh Resolution Displays
W. S. Choi, Y. H. Jang, K.-S. Park, Y. G. Chang,
S. C. Choi, T. W. Moon, J. Y. Seo, H. N. Cho, N. W. Cho,S. B. Ryu, J. Y. Yang, C.-D. Kim, Y. K. Hwang, I.-J. Chung
LG Display, Korea

A novel data line sharing method, suitable for high resolution andfast frequency display, has been developed, which has a symmetrical
pixel structure. Moreover, we have successfully fabricated the 17.1in. AMLCD WXGA panel with the new method and the a-Si TFT based
circuit integration technology of LG Displayʼs own.
----- Break ----16:40 - 17:40

Room 501

AMD2: System on Panel & Sensing Device
A. Heya, Univ. of Hyogo, Japan
M. Inoue, Chimei Innolux, Japan

AMD2 - 1

Withdrawn

AMD2 - 4L
16:40

Dynamic Self-Refreshing Memory-in-Pixel Circuit
for Ultra Low Power 302ppi LTPS TFT-LCD

AMD

Chair:
Co-Chair:K. Yamashita, M. Shibazaki, H.-Y. Liang*, Y. Matsui,
S. Kawata, C.-J. Chang*, M. Yoshiga, N. Sumi,
T.-Y. Cheng*, T.-W. Kuo*, E.-L. Deng*, W.-J. Lin*TPO Displays Japan, Japan*Chimei-Innolux, Taiwan
An ultra low power dynamic Self-Refreshing-Pixel Memory In Pixel(SRP-MIP) circuit with 302 ppi is integrated into a 2.65-in. VGA(480RGBx640) transﬂective LTPS TFT-LCD by using new VA mode.
The power consumption in MIP mode is 200 µW, while keeping thetransmissive aperture ratio of 20%.
AMD2 - 2
17:00

A Novel Pixel Design of 4-in. QHD TFT-LCD with New
Reliable Integrated a-Si Scan Driver (RASD)
H. R. Han, W. C. Wang, M. C. Yu, W. C. Tsai, T. H. Lin,C. H. Huang, H. Y. Chang, M. H. Tsai, F. C. Wu,
W. T. Liao
Wintek, Taiwan

A novel 4-in. QHD a-Si TFT-LCD with reliable integrated a-Si scandriver (RASD) has been developed. This new circuit is able to resist
the Vth shift of a-Si TFT after a long-term operation. Furthermore,by introducing fast-switching liquid crystal with protrusion free pixel
design, fast response display can also be achieved.

45

Wed./Thu.
AMD2 - 3
17:20

December 1/2
The Polarity Bias Control of Indium Zinc Oxide Thin
Film Transistor for Gas Sensor Application
L.-F. Teng, P.-T. Liu, Y.-T. Chou, Y.-S. Fan
Nat. Chiao Tung Univ., Taiwan

An obvious Vth shift was observed after gate-bias stress andrecovered. This metastability was attributed to the interaction
between the exposed a-IZO backchannel and oxygen/moisture fromthe atmosphere, regardless of the polarity of stress voltage. Thiswater/moisture sensitivity characteristic can be used for gas sensor
application.
Author Interviews
18:00 – 19:00

Thursday, December 2
9:00 - 10:20

Room 501

AMD3: Si TFT
Chair:
Co-Chair:

M. Yoshiga, TPO Displays Japan, JapanS. Horita, JAIST, Japan

AMD3 - 1
9:00

Advanced 405 nm Laser Diodes Crystallization of
a-Si Film for the Fabrication of Microcrystalline-Si
TFTs
K. Morimoto, N. Suzuki, M. Yuri, K. Yamanaka, J. Milliez*,
X. Liu*Panasonic, Japan*Panasonic, USA

We have proposed a novel crystallization method of a-Si using 405
nm laser diodes and applied it to the fabrication of bottom gate
microcrystalline-Si TFTs for the ﬁrst time. High performance TFTs weresuccessfully demonstrated and the advantage of a 405 nm wavelength
was also veriﬁed with heat ﬂow simulation.
AMD3 - 2
9:20

Fabrication of 15-in. HD WXGA AMOLED Panel with
Micro-Crystalline Silicon TFTs by the Indirect
Thermal Crystallization (ITC) Method
K.-T. Kim, J. H. Bae, S. Lee, B. G. Choi, H. K. Lee,S. K. Kim, K.-S. Park, C.-D. Kim, Y. K. Hwang,
I.-J. Chung
LG Display, Korea

15-in. HD WXGA AMOLED panel has been fabricated with microcrystalline silicon TFTs adopting indirect thermal crystallization (ITC)
method. We developed a-Si TFT based bottom gate process of
7masks, which is suitable for a large sized panel. ITC-TFT showed
high mobility and reliable electrical characteristics in a full range of thepanel.
46

Thursday
AMD3 - 3
9:40

December 2
A High Resolution Polymorphous 3ATI AMOLED
Display Based on a Low Mask Count Top Gate
Process
M. Herrmann, P. Schalberger, H. Baur, N. Fruehauf
Univ. of Stuttgart, Germany

We processed a grayscale-compliant 3ATI type display with highresolution driven by an integrated gate driver based on our new
polymorphous silicon top gate process. Due to the selective depositionof n-doped silicon onto metal D/S contacts a lower mask countcompared to well established bottom gate processes was achieved.
AMD3 - 4
10:00

Drain Bias Effect on Characteristics of Leakage
Current for Various Back-Surface State Density
C.-S. Wei
AU Optronics, Taiwan----- Break ----10:40 - 12:10

Room 204

FLX5/AMD4: Flexible Active-Matrix Devices
Chair:
Co-Chair:K. Tsukagoshi, NIMS-MANA, Japan
T. Shiro, Teijin, Japan

FLX5/
AMD4 - 1:
10:40

Invited Application of Organic Thin-Film Transistors
for Circuits on Flexible Foils
P. Heremans*,**, K. Myny*,**, H. Marien**,E. V. Veenendaal***, S. Steudel*, J. Genoe*,
M. Steyaert**, G. H. Gelinck*****imec, Belgium**Katholieke Univ. Leuven, Belgium***Polymer Vision, the Netherlands****Holst Ctr. TNO, the Netherlands

We present the state of the art of digital and analog circuits (inparticular code generators for RFID tags, ampliﬁers, AC-DC and
DC-DC converters) using organic TFTs on plastic foil, and discuss
some design considerations needed to overcome todayʼs technology
limitations.

47

AMD

Device leakage current for drain bias effect has been investigated.
Furthermore, the back-surface state density is a key parameterfor lower the reverse sub-threshold leakage current under smaller
drain operation. Display application for high drain operation was also
introduced when device off-state driving region was different.

Thursday
FLX5/
AMD4 - 2:
11:05

December 2
Invited A Rollable OTFT-OLED Display
I. Yagi, M. Katsuhara, A. Yumoto, N. Kobayashi, M. Noda,
R. Yasuda, S. Ushikura, G. Yukawa, N. Hirai, K. Nomoto,
T. UrabeSony, Japan

A rollable OLED display, which can be rolled-up in a radius of 4 mm, isdriven by a newly-developed OTFT backplane. The backplane equips
with an integrated gate driver circuit and it is constructed of OTFTs
using a self-developed organic semiconductor, a PXX derivative.
FLX5/
AMD4 - 3
11:30

The High Stability and Uniformity a-IGZO Thin Film
Transistors Array for AM-OLED Application
J.-Y. Yan, H.-C. Yao, Y.-P. Chen, C.-Y. Hung, Y.-Y. Wu,
K.-Y. Ho, H.-C. Cheng
ITRI, Taiwan

The high stability and uniformity amorphous InGaZnO4 TFTs were
fabricated on plastic substrate. We optimize the process and abandon
the ES layer to reduce photomask and processing time. The mobility,
SS and Vth of a-IGZO TFTs is 7.33 cm2/Vs, 0.42 V/dec and 0.79 V. The
lifetime of AMOLED is exceeding 10 years.
FLX5/
AMD4 - 4
11:50

Full Color AM-LCDs on Flexible Glass Substrates
S. Hoehla, S. Garner*, M. Hohmann, O. Kuhls, X. Li*,
A. Schindler, N. Fruehauf
Univ. of Stuttgart, Germany*Corning, USA

We have realized a full color 4-in. quarter-VGA amorphous Silicon AMLCD on 75 µm ﬂexible glass substrates. With this work we demonstratethat the incorporated ultra-thin glass substrates have suitableproperties to be compatible with a standard color AM-LCD process andachieve active matrix backplanes with reliable performance.
----- Lunch -----

IDW ’11
The 18th International Display Workshops
December 7-9, 2011
Nagoya Congress Center
Nagoya, Japan
http://www.idw.ne.jp48

Thursday

December 2

13:20 - 16:20

Poster/A.I. Room

Poster AMDp: Active-Matrix Devices
AMDp - 1

New Compensation Method for Image Distortion by
the Ripple of Common Electrode in TFT-LCDs
K. H. Kim, W. K. Moon, M. S. Kim, J. H. Park, J. K. Song*Samsung Elect., Korea*Sungkyunkwan Univ., Korea

The ripple of common electrode by internal capacitive coupling in TFTLCDs makes a falling-off in image quality like horizontal crosstalk andgreenish phenomenon. To improve these defects, some compensation
methods have been used since long ago, but not perfect. This paper
proposes more advanced methods to maximize the improvement
effect.
Withdrawn

AMDp - 3

A Novel Depletion Mode IGZO TFT Gate Driver
Embedded with a Level ShifterAMD

AMDp - 2

B. Kim*,**, S. B. Ryu**, S. C. Choi**, S.-H. Choi**,Y. H. Jang**, K.-S. Park**, C.-D. Kim**, Y.-K. Hwang**,
I.-J. Chung**, M.-K. Han*
*Seoul Nat. Univ., Korea**LG Display, Korea

We propose and design a new gate driver embedded with a level
shifter employing depletion mode In-Ga-Zn-O thin ﬁlm transistors.
The SPICE simulation results exhibit that the gate driver successfully
generates an output-pulse without any distortion. The proposed circuit
would be an important building block for an oxide TFT display.
AMDp - 4

Stabilization for Integrated Gate Driver Circuit withHigh Temperature Operation in Large-Sized Panel
C.-D. Tu, C.-E. Wu, C.-L. Lin
Nat. Cheng Kung Univ., Taiwan

A new gate driver circuit using 11 TFTs, one capacitor and 4 signals
is proposed. Based on the measurement of a-Si:H TFT, the thresholdvoltage shift can be reduced by adjusting the duty ratio. The simulation
result shows the proposed circuit can implement over than 24 hours at
high temperature.

49

Thursday
AMDp - 5

December 2
A Voltage Regulator Using Chopper Comparators
for LTPS-TFT
T. Mizuno, M. Yoshida
Tokai Univ., Japan

In this paper, a voltage regulator using chopper comparators for LTPSTFT (Low Temperature Poly Silicon-Thin Film Transistor) is proposed.
The proposed circuit can reduce the maximum deviation rate of theoutput voltage (VOUT) for the device mismatch. In addition, the power
efﬁciency of the proposed circuit is 58%.
AMDp - 6

A Novel a-Si TFT Gate Driver with Simplified Logic
Circuit for Three Level Driving Application
J. Lu, Y. Qiao, C.-T. Liao, T.-C. Chung, T.-S. Jen
InfoVision OptoElect., China

A novel circuit with a simple four-TFT- three-clock structure which was
implemented to GIA for reducing the cost of TFT-LCD was proposed.
It could output the three- level waveform. By implementation of this3-level gate driving scheme, both low cost and high aperture ratio could
be achieved simultaneously.
AMDp - 7

An Active-Matrix Backplane Design Using ShadowMasking Techniques to Create EconomicallyAttractive Devices with Integrated Drivers
C. E. Harrigal, W. Little
Advantech US, USA

Through shadow-masking techniques, we have economically produced
active-matrix backplanes with integrated driving circuitry. The TFTʼs
have speeds and currents necessary to drive E-Paper and OLED frontplanes. Additionally, they have leakage currents low enough to havepower consumption advantages.
AMDp - 8Integrated Potentiostat Using Thin-Film Transistors
with Electrochemical Cell
Y. Imuro*, K. Bundo**, Y. Sagawa**, K. Setsu*,
M. Kimura*,***,*****Ryukoku Univ., Japan**Nara Inst. of S&T, Japan***Joint Res. Ctr. for S&T, Japan****Innovative Materials & Processing Res. Ctr., JapanWe developed an integrated potentiostat using TFTs with anelectrochemical cell. Poly-Si TFTs and three electrodes are fabricatedon a glass wafer. Cyclic voltammetry for enzyme and redox reactions
is executed, and a glucose concentration of 0.4 mM can be detected,
which is sufﬁcient sensitivity for some medical applications.

50

Thursday
AMDp - 9

December 2
Embedded Touch Sensing Circuit Using the Body
Capacitance for AMOLED Displays
Y.-J. Park, S.-J. Seok, S.-H. Park, O. Kim
POSTECH, Korea

The embedded touch sensing circuit is proposed and simulated for
AMOLED display. Unlike LCD which has a variable capacitor, there is
no a variable capacitor in OLED structure so that we artiﬁcially makethe variable capacitor in the sensing pixel to detect the touch using theconcept of body capacitance.
AMDp - 10

Peculiar Charge Pumping Characteristics andExploration of MOS Interfaces in Large-Grain LTPS
TFTs
T. Kato, G. Kawachi*, T. Tsuchiya
Shimane Univ., Japan*ALTEDEC, Japan

AMDp - 11

Polycrystalline Silicon Thin Film Transistors with
Simultaneous Realization of Threshold Voltage
Adjustment and Nickel Drive-in
W. Zhou, S. Zhao, R. Chen, M. Wong, H.-S. Kwok
Hong Kong Univ. of S&T, Hong Kong

A new fabrication process of metal induced crystallization
polycrystalline silicon (poly-Si) Thin Film Transistors (TFTs) is
proposed. Threshold voltage adjustment and nickel drive-in issimultaneous realized by boron implantation after nickel sputtering.
Threshold voltage of TFTs is greatly reduced, while the current on/off
ratio, mobility and sub-threshold slope are maintained.
AMDp - 12

Characteristics of Thin Film Transistors Fabricatedby Solid Phase Crystallization and High Speed
Lateral Crystallization Induced by Micro-ThermalPlasma-Jet Irradiation
S. Hayashi, S. Higashi, H. Murakami, S. Miyazaki*
Hiroshima Univ., Japan*Nagoya Univ., Japan

Thin Film Transistors (TFTs) were fabricated by Solid Phase
Crystallization (SPC) and High Speed Lateral Crystallization (HSLC) Si
ﬁlms fabricated by Micro-Thermal-Plasma-Jet irradiation with different
plasma-substrate gap. Characteristic variation of SPC-TFT was
suppressed to less than 1%, while HSLC-TFT achieved a very highﬁeld effect mobility of 260 cm2/Vs.

51

AMD

The charge-pumping characteristics in LTPS-TFT were investigatedto understand the electronic-properties near the MOS interface. It
was found from the investigation that there are some scattered dense
regions of interface traps, which are considered to correspond tojoining points of the grain boundaries.

Thursday
AMDp - 13

December 2
Crystallization of Sputtered Si Films by Blue Laser
Diode Annealing (BLDA) for Photo-Sensor
Application
J. D. D. Mugiraneza, K. Shirai, T. Suzuki, T. Okada,T. Noguchi, H. Matsushima*, T. Hashimoto*, Y. Ogino*,
E. Sahota*
Univ. of the Ryukyus, Japan*Hitachi Computer Peripherals, Japan

Results of various spectroscopic methods showed the thick sputteredSi ﬁlms entirely crystallized with preferred orientation as (111) after
BLDA. Superﬁcial layer turns into lateral grains while underlying layer
grows into columnar grains. Photo-electrical characteristics show BLDA
is promising for fabrication of advanced poly-Si photo-sensor and forthin ﬁlm photovoltaic cells.
AMDp - 14

Microwave Remote H+ Plasma Passivation for
Self-Release Nickel Induced Crystallization (SR-NIC)
Polycrystalline Silicon Thin-Film Transistors (TFTs)
S. Zhao, W. Zhou, R. Chen, Z. Meng, M. Wong,
H. S. Kwok
Hong Kong Univ. of S&T, Hong Kong

In this study, microwave remote H+ plasma treatment was applied toself-release nickel induced crystallization (SR-NIC) polycrystalline
silicon thin-ﬁlm transistors (poly-Si TFT). By applying microwave remote
plasma treatment, intra-grain and grain boundary trap states in thepoly-Si ﬁlm can be passivated. So, performance of p-channel TFT canbe improved signiﬁcantly.
AMDp - 15

Withdrawn

AMDp - 16

Dependence of Poly-Crystallization on Scanning
Velocity of Blue-Multi-Laser-Diode Annealling(BLDA)
K. Shirai, J. D. D. Mugiraneza, T. Suzuki, T. Okada,T. Noguchi, H. Matsushima*, T. Hashimoto*, Y. Ogino*,
E. Sahota*
Univ. of the Ryukyus, Japan*Hitachi Computer Peripherals, Japan

Undoped amorphous Si (a-Si) thin ﬁlms prepared by radio frequency(RF) sputtering were poly-crystallized by changing the scanningvelocity of BLDA. Arbitrary grain size structure and high crystallinityof grains can be realized for the sputtered a-Si ﬁlm by controlling thescanning velocity of BLDA.

52

Thursday
AMDp - 17

December 2
Influence of Grain Size on Gate Voltage Swing andThreshold Voltage of Poly-Si Thin Film Transistors
F. Oshiro, K. Shirai, T. Noguchi, T. Ohachi*, H. M. Koo**,
H. S. Choi**
Univ. of the Ryukyus, Japan*Doshisha Univ., Japan**LG Display, Korea

A model of the gate voltage swing considering interface trap, bulk
trap and grain size is proposed. The threshold voltage can be given
to estimate Id-Vg characteristics by grain size and Si thickness. The
proposed model successfully explains a behavior of practical TFT in
weak and strong inverted region.
AMDp - 18

Crystallization Mechanism of a-Ge and a-Si Films by
SR Soft X-Ray Irradiation
Y. Nonomura, S. Amano, A. Heya, N. Isoda,
S. Miyamoto, K. Kanda, N. Matsuo, T. Mochizuki,
T. Sadoh*, M. Miyao*

AMD

Univ. of Hyogo, Japan*Kyusyu Univ., Japan
We investigatedlow-temperaturecrystallization of a-Ge, a-Si and a-SiGe
ﬁlms by the SR soft X-ray irradiation at storage ring current of 25-220
mA and dose quantity of 50 mA･h. The relationship between electron
excitation-atom movement process, thermal process and the storage
ring current are investigated.
AMDp - 19

Plasma Annealing of ZnO:Al Capping Layer for
Thin-Film Transistors
N. Ohta, Y. Imamura, S. Sato, D. Ohba, H. Shimizu*,
H. Shirai
Saitama Univ., Japan*Saitama Ind. Tech. Ctr., JapanThe rapid thermal annealing of a-Si/SiO2/ZnO:Al(AZO) heterostructure
was studied using the rf thermal plasma jet of argon. The crystallizationof Si and AZO layers was enhanced without creating intermixing layer
at theSi/SiO2/AZO interfaces by adjusting the plasma conditions. Theseﬁndings are effective to improve the TFT performance.
AMDp - 20

Effect of Back-Channel Treatment on the PhotoLeakage Current of a-Si TFTs
C.-Y. Yang, C. Y. Lin, S.-C. Huang, C.-Y. Huang,
H.-L. Chen
AU Optronics, Taiwan

Different treatments onto the back-channel region of a-Si TFTs are
performed, including different plasma treatments. By comparing namely
the “beta” parameter, it is discovered that beta is the smallest underH2 treatment and the largest as no treatment is performed, which justcorresponds to the photo-leakage behaviors under these treatments.

53

Thursday
AMDp - 21

December 2
Systematic Measurement of Negative Gate Bias
Instability and Application for Power Consumption
Display
C.-S. Wei, S.-W. Huang, P. M. Chen, J.-S. Chen,
C. T. Peng, W.-M. Huang
AU Optronics, Taiwan

Negative bias stress with variously gate bias driving board haveseveral reliability results when gate bias duty ratio and wait time as
the next gate bias driving was applied. Results show that permanentdegradation and instantly recovery was observed when gate bias
driving mode was different.
AMDp - 22

Influence of Silicon Nitride and Amorphous Siliconon the Stability of Amorphous Silicon Thin-Film
Transistors
C.-Y. Hou, S.-H. Lin, J.-K. Chang, H.-L. Chen,
C.-H. Chen
AU Optronics, Taiwan

A systematic study of amorphous silicon (a-Si) TFTs fabrication
process with high stability for driver circuit application has been
investigated. Using the bias temperature stress measurement, it is
discovered that the threshold voltage shift is more dominated by thequality of the active layer than the dielectric layer.
AMDp - 23

Determining Factor of the Preferential Crystal
Orientation of the Growth of Microcrystalline SiliconFilms by rf PE-CVD of a SiH2Cl2 and H2 Mixture for
Silicon Thin-Film Transistors
D. Ohba, Z. Tang, H. Shirai
Saitama Univ., JapanThe factor determining the preferential crystal orientation in the growthof microcrystalline silicon ﬁlms was studied by the rf PE-CVD of a
SiH2Cl2 and H2 mixture. The sticking process of deposition precursors
and/or reconstruction of Si clusters within the subsurface region
determines the growth of the preferential (220) crystal orientation.
AMDp - 24

Highly Stabile Amorphous Indium-Gallium-Zinc
Oxide TFT with Photosensitivity Organic Passivation
Layer for AM-OLED Display
L. C. Lee, H. C. Ting, F. W. Chang, T. H. Shih,C. W. Chou, H. H. Lu, C. Y. Chen, Y. H. Lin
AU Optronics, Taiwan

A method to improve the amorphous IGZO TFTs environment stability
is demonstrated in this study. An organic passivation layer withoutacryl element has high anti-water absorption ability. [1, 2] The TFTs
were effective fabricated with good performance by using conventional
process.

54Thursday
AMDp - 25

December 2
Three TFT Pixel Circuit with Highly Stable OLED
Current for AMOLED
K.-W. Chou, C.-C. Hung, F.-C. Chang, C.-L. Lin
Nat. Cheng Kung Univ., Taiwan

This work proposes a novel voltage-programming pixel circuit for
AMOLED using a-Si:H technology. The proposed 3T1C circuit
can stabilize the output current regardless of VTH shift and OLED
degradation. Experimental results indicate that the OLED current
degradation is less than 3% over more than 16 h of operation.
AMDp - 26

Frequency Characteristics of Solution-Processed
Organic Field-Effect Transistors with Self-Aligned
Electrodes
T. Nagase*,**, H. Hatta*, Y. Miyagawa*, T. Kobayashi*,**,
S. Murakami***, M. Watanabe****, K. Matsukawa****,
H. Naito*,**AMD*Osaka Pref. Univ., Japan**The Res. Inst. for Molecular Elect. Devices, Japan***Tech. Res. Inst. of Osaka Pref., Japan****Osaka Municipal Tech. Res. Inst., Japan

We have fabricated the solution-based organic FETs with polymer gateinsulators using a self-aligned method and investigated their frequency
characteristics. The fabricated organic FETs exhibit electrically stable
operation and have extremely low parasitic capacitance. Impedance
spectroscopy of organic FETs with self-aligned electrodes reveals
frequency-dependent channel formation process in FET structure.
AMDp - 27

Polymer Thin-Film Transistors with a SolutionProcessed Passivation Layer
F.-C. Wu, Y.-T. Chen, Y.-W. Jang, H.-L. Cheng
Nat. Cheng Kung Univ., Taiwan

Poly(3-hexylthiophene)-based (P3HT) thin-ﬁlm transistors (TFTs) madefrom different solvents were fabricated. After covering the P3HT active
layers with a solution-processed passivation layer, the mobility of P3HT
TFTs was enhanced. We suggest that some vacancies in the P3HT
active layers should be ﬁlled with solvent molecules to promote carriertransport.
AMDp - 28

Synergistic Effect of Light Illumination and BiasStress on Threshold Voltage Shift of Ink-Jet Printed
TIPS-Pentacene Thin-Film Transistor
T. H. Hwang, S. H. Lee, S. H. Kim, M. H. Choi, J. Jang
Kyung Hee Univ., Korea

We have studied the electrical stability of the ink-jet printed TIPSpentacene TFT with Ag source/drain electrodes. We have measured
the gate bias-stress effect in dark, and the gate bias effect under lightillumination. The results are discussed with the carrier trappings at theinterface and in the bulk.

55Thursday

December 2

AMDp - 29

Anomalous Photocurrent Characteristic at Negative
Gate Bias
T. Inoue, M. Tsubuku, M. Takahashi, A. Miyanaga,
S. Yamazaki
Semiconductor Energy Lab., Japan

We conducted light irradiation to IGZO TFT at negative bias applied
to its gate and found anomalous photocurrent characteristics. On
calculation model, we well reproduced this phenomenon by assuming
relaxation time with different length for holes and electrons. This
analytical technique will be effective in discussing levels in the
bandgap.
AMDp - 30

Effects of Additive Elements on TFT Characteristics
in Amorphous IGZO Films under Light Illumination
StressS. Morita, S. Yasuno, A. Miki, T. Kugimiya
Kobe Steel, Japan

We have studied effects of additive elements on light-induced thresholdvoltage (Vth) shift in amorphous IGZO TFTs. By addition of Hf or Si,
Vth shift due to light illumination, negative-bias and thermal stress
was successfully suppressed. The suppression could originate from adecrease in hole trap at the gate-IGZO interface.
AMDp - 31

Direct Correlation of Photo Conductivity Decay withTransistor Performance in Amorphous Oxide
Semiconductor Films Evaluated by Microwave
Photo Conductivity Decay Method
S. Yasuno, S. Morita, A. Miki, T. Kugimiya, F. Ojima*
Kobe Steel, Japan*Kobelco Res. Inst., JapanThe microwave photoconductivity decay method was applied toevaluate ﬁlm quality of IGZO, an amorphous oxide semiconductor.
The peak reﬂectivity was correlated with transistor performance. Also,µ-PCD mappings over the ﬁlms were undertaken. The µ-PCD method
was useful to predict device performance of AOS TFTs fabricatedunder various process conditions.

56

Thursday
AMDp - 32

December 2
Study on Oxygen-Dependent Instability ofAmorphous In-Ga-Zn-O TFT and Completely Stable
Device under Both Positive and Negative Bias
StressesW.-T. Chen, H.-W. Zan, S.-Y. Lo, S.-C. Kao, C.-C. Tsai,
J.-H. Lin*, C.-H. Fang*, C.-C. Lee*Nat. Chiao Tung Univ., Taiwan*AU Optronics, Taiwan

An experiment is conducted to verify the origin of stress-induced
instability in an amorphous indium-gallium-zinc-oxide (a-IGZO) thinﬁlm transistor. It is found that the oxygen ratio in an IGZO layerstrongly inﬂuences the device stability under bias stress. For realizing
an adequately stable device, post-annealing and passivation are
performed in order.
AMDp - 33

Effect of Active Layer Thickness on the IndiumGallium-Zinc-Oxide TFTs

AMD

S.-J. Kim*, S.-Y. Lee*, J.-Y. Kwon*, W.-G. Lee**,
K.-S. Yoon**, Y.-W. Lee*,**, M.-K. Han*
*Seoul Nat. Univ., Korea**Samsung Elect., Korea

IGZO TFTs with various active-layer thicknesses were investigated. VTH
of TFT with 400 Å activelayer was -0.6 V at R.T. and shifted 0.83 V at
230oC while that of TFT with 700 Å active-layer was -1.2 V and shifted
2.3 V. We have investigated the effect of active-layer thickness on the
IGZO TFTs.
AMDp - 34

Channel Dimension and Hysteresis Behavior on
ALD-Prepared Transparent ZnO Thin Film Transistor
W.-S. Choi, Y.-J. Kwack, J.-S. Lee, E.-S. Chun
Hoseo Univ., Korea

Different thickness of active layer in ZnO bottom-contact thin-ﬁlm
transistors (TFTs) were fabricated by using injector type atomic layer
deposition (ALD). The properties of the ZnO TFT were inﬂuenced
by the active thickness and width-to-length (W/L) ratio of device.
The hybrid gate dielectrics were examined to investigate hysteresis
behaviors.
AMDp - 35

Shadowmask-Controlled Circuit Fabrication - an
Obsolete Technology Resurrected
T. P. Brody, C. E. Harrigal, W. Little
Advantech US, USA

Advantech has revived the shadowmask process of manufacturing TFT
circuits, which promises low cost, in-line system fabrication of active
matrix backplanes and other circuits. We discuss the philosophy andjustiﬁcation of the revived process and report on initial results of color
AMOLED and e-paper backplanes.

57Thursday

December 2

AMDp - 36L Evaluation of Hall Effect in Micro Poly-Si Hall
Devices to Analyze Electron Transport in Poly-Si
Films
H. Hashimoto*, Y. Yamaguchi*, M. Hirako*, T. Yamaoka*,
M. Kimura*,**,****Ryukoku Univ., Japan**Joint Res. Ctr. for S&T, Japan***Innovative Materials & Processing Res. Ctr., Japan

Hall effect in micro poly-Si Hall devices is evaluated to analyze electrontransport in poly-Si ﬁlms. The Hall voltage has offset voltage even whenmagnetic ﬁeld is zero. The polarity is reversed when control current isreversed. The offset voltage is caused by zigzag paths of the electrontransport.
AMDp - 37L Dependence of Trap Density in SPC Poly-Si TFT on
Temperature and Time of Post Annealing
M. Kimura
Ryukoku Univ., Japan
Dependence of trap densities in SPC poly-Si TFTs on post annealing
temperature and time is evaluated using low-f C-V characteristics andextraction algorithm. The trap densities can be reduced by increasing
the temperature and time, which is brought by the extinction of crystal
defects. The activation energy is roughly 2 eV.
AMDp - 38L High-Performance Amorphous InGaZnO Thin-Film
Transistors with High-k Sm2O3 Gate Dielectrics
F.-H. Chen, Y.-H. Shao, W.-C. Li, T.-M. Pan
Chang Gung Univ., Taiwan
In this paper, we developed high-k Sm2O3 indium-gallium-zinc oxidethin-ﬁlm transistor (IGZO TFTs) with and without RTA treatment. The
high-k Sm2O3 oxide TFT device annealed at 400 C exhibited better
electrical characteristics in terms of a large effective carrier mobility,
high-driving current, low-threshold voltage, and high ION/IOFF current
ratio.
AMDp - 39L High-performance LTPS TFT for High-k Tb2O3 with
CF4 Plasma Treatment
F.-H. Chen, Z.-H. Li, Y.-H. Shao, W.-C. Li, T.-M. Pan
Chang Gung Univ., Taiwan
The high-k Tb2O3 poly-Si TFT device using a 20 W plasma power
treatment exhibited good electrical performances, including a higheffective carrier mobility, a low-threshold voltage, a small subthresholdslope, and a high ION/IOFF current ratio. It also enhanced electricalreliabilities including hot carrier and positive bias temperature
instability.

58

Thursday

December 2

AMDp - 40L Performance Enhancement of Organic Thin-Film
Transistors Using Bathophenanthroline:Cs Electron
Injection Layer
J. Kim, H. Son, J. Yang, M. Yi
Pusan Univ. of Elec. Eng., Korea
We fabricated organic thin ﬁlm transistor (OTFT) with Bphen:Cs
electron injection layer between organic semiconductor(C60) andmetal electrode to improve the electrical performances. Mobility andon-current of the device with Bphen:Cs electron injection layer wereincreased more than twice compared with the normal device without
the injection layer.
AMDp - 41L Predicting Realistic Reliability Using DC Bias Stress
Y.-J. Hsu, M.-H. Lee, J.-T. Peng, W.-M. Huang
AU Optronics, Taiwan

AMDp - 42L Bias Dependent of Threshold Voltage Shift of a-Si:H
TFT with DC and AC Stress on the Gate ElectrodeS. W. Jeong, D. Y. Park, H. Choi, K. H. Moon, Y. S. Choi,
D. H. Koo
LG Display, Korea
We have investigated the threshold voltage shift(∆Vth ) of a-Si:H TFTs
induced by Bias-Temperature-Stress(BTS) conditions. Our Researchshowed that, the ∆Vth has bias-dependence due to the various
DC(direct current) BTS. Also, instead of DC BTS, AC(alternating
current) BTS was applied to extrapolate the ∆Vth induced by reliability
evaluation.
AMDp - 43L Width Dependent Degradation of Amorphous Si:HThin Film Transistors Due to Self-Heating Effect
D. Y. Park, D. H. Nam, S. W. Jeong, H. Choi, K. H. Hoon,
Y. S. Choi
LG Display, Korea
In this paper, we have investigated the channel width effect on thestability of a-Si:H TFTs. Results of this paper show that the electricalstress causes positive VT shift and subthreshold slop degradation. As
the channel width gets wider, the degradation derived under stress ismore increased.

59

AMD

A new method was proposed for predicting reliability of TFT during
realistic panel operations. Based on traditional bias-temperature stressdata, more accurate predictions regarding threshold voltage shift canbe obtained and used in real panel operations.

Thursday

December 2

AMDp - 44L Gate-Drain-Bias Stress Study of Amorphous In-GaZn-O TFTs
C.-Y. Wu, Y.-C. Kao, C.-Y. Huang, C.-N. Lin, C. H. Chen
AU Optronics, Taiwan
The stability of amorphous indium gallium zinc oxide (α-IGZO) TFTs
under different gate and drain bias stress is discussed in this paper.
The stress effect of different channel-width testkey is also shown in thisarticle.
AMDp - 45L Self-Assembled Monolayer Gate Dielectric for Low
Voltage Driving Pentacene Thin-Film Transistors
D. Lee, J. H. Lee, S. W. Kim, J.-S. Kim*, D. Y. Jeon
KAIST, Korea*Imperial College London, UK

In this study, pentacene thin-ﬁlm transistors were fabricated withn-octadecylphosphonic acid as self-assembled monolayer gate
dielectric on a plastic substrate. Also we fabricated pentacene TFTs
with SiO2 dielectric on a Si wafer for comparison. The range of VG was
remarkably decreased from -40 V to -3 V comparing to SiO2 dielectric
devices.
AMDp - 46L Lateral Large-Grained Low-Temperature Poly-Si1xGex TFTs on Glass Substrate
Y. Okabe, K. Kondo, K. Hirose*, J. Suzuki*, K. Kitahara*,
A. HaraTohoku Gakuin Univ., Japan*Shimane Univ., Japan

We fabricated lateral large-grained poly-Si0.95Ge0.05 TFTs on glass
substrates at a low process temperature of 550 C and obtained aﬁeld-effect mobility of 130 cm2/Vs. This value is larger than those ofpreviously reported researches. We realized the fabrication of highperformance TFTs with reduced thermal damage to glass substrates.
AMDp - 47L Solution Process for Metal Oxide Thin Film
Transistors under 350oC Post-Annealing
W. H. Jeong, J. H. Bae, K. M. Kim, D. L. Kim, Y. S. Kim,
S. J. Kim, H. J. Kim, M.-K. Ryu*, K.-B. Park*, J.-B. Seon*,
S.-Y. Lee*
Yonsei Univ., Korea*Samsung Advanced Inst. of Tech., Korea
We have investigated solution process for metal oxide thin ﬁlm
transistors under post-annealing temperature of 350 C. Processengineering which includes materials, precursors, and gate insulators
acts important roles under 350 C post-annealing process for large-area
deposition.

60

Thursday

December 2

16:40 - 18:05

Room 501

AMD5/OLED6: AM-OLED
Chair:
Co-Chair:D. Pribat, SungKyunKwan Univ., Korea
Y. Fujisaki, NHK, Japan

Invited Process Development of Amorphous IndiumAMD5/
OLED6 - 1: Gallium-Zinc-Oxide Thin-Film Transistors for Large
Size AMOLED Applications
16:40
H.-C. Ting, H.-H. Lu, T.-H. Shih, L.-C. Lee, C.-W. Chou,
L.-P. Shin, S.-S.Wang, T.-C. Wan, C.-Y. Chen, Y.-H. Lin
AU Optronics, Taiwan
In this paper, we will show how to approach a-IGZO TFTs AMOLED
in Gen 6 Fab currently. We evaluated the TFTs structure from bottom
gate coplanar to BCE type with Mo/Al/Ti as S/D electrode. Using
photosensitive organic passivation layer and TiOx coating to improved
the device performance and stability.
High Mobility Oxide Semiconductor TFT for Circuit
Integration of AM-OLED

AMD

AMD5/
OLED6 - 2
17:05

E. Fukumoto, T. Arai, N. Morosawa, K. Tokunaga,
Y. Terai, T. Fujimori, T. Sasaoka
Sony, Japan

We have developed a high mobility and high reliability oxide
semiconductor TFT which used ITZO as a channel material. Its mobilityand ∆Vth after 20,000sec of BTS test were 30.9 cm2/Vs and 0.1 V. We
have achieved a stable enhancement type TFT, which realizes circuit
integration for AM-OLED.
AMD5/
OLED6 - 3
17:25

A New Simple Pixel Circuit Compensating theThreshold Voltage for AMOLED Displays
Y.-I. Hwang, Y.-S. Park, K.-N. Kim, B.-H. Kim,
B. H. Berkeley, S.-S. Kim, B.-D. Choi*
Samsung Mobile Display, Korea*Sungkyunkwan Univ., Korea

We propose new simple pixel compensation circuits with three orfour thin ﬁlm transistors (TFTs) and one capacitor. In addition tocompensating the deviation of the threshold voltage of the driving
TFTs, we can compensate IR-drops and reduce the number ofcomponents in compensation circuits with these novel circuits.

61

Thu./Fri.

December 2/3
4.1-in. Full Color AMOLED Driving by Top Gate
Nanocrystalline Silicon Thin Film Transistor Array

AMD5/
OLED6 - 4
17:45

K.-Y. Ho, H.-C. Lin, H.-S. Dai, P.-F. Lee, C.-C. Hsu,
S.-Y. Peng, C.-W. Lin, C.-H. Cheng, B.-C. Kung,
W.-Y. Chao, J.-Y. Yan, H.-C. Cheng
ITRI, Taiwan

High performance nanocrystalline silicon thin ﬁlm transistors areachieved with top gate staggered structure. The nc-Si is directly
deposited by 13.56 MHz plasma enhanced chemical vapor deposition(PECVD) at 200 C. Good device perf ormance, uniformity, andreliability make it possible to be integrated into active matrix organic
light emitting diode (AMOLED) applications.
Author Interviews
18:00 – 19:00

Friday, December 3
9:00 - 10:10

Room 501

AMD6: Organic & Carbon TFT
Chair:
Co-Chair:P. Heremans, imec, Belgium
K. Nomoto, Sony, Japan

AMD6 - 1:
9:00

Invited Organic Single Crystals with Band-LikeTransport in Field-Effect Transistors
K. Tsukagoshi*,**, C. Liu*, T. Minari*,***NIMS-MANA, Japan**CREST-JST, Japan

We report organic single crystals transistor formed by solution
process. A self-organized phase separations to form an amorphoussemiconductor ﬁlm on insulator-polymer by spin-coating the mixture of
the semiconductor molecule and insulator-polymer realized the bandlike transport with high mobility up to 9.1 cm2/Vs after annealing insolvent vapor.
AMD6 - 2:
9:25

Invited Field Effect Transistors Based on Organic
Semiconductors and Graphene
K. Tanigaki, S. Ikeda, X. Fan, R. Nouchi, Y. Wang,
N. Mitoma
Tohoku Univ., Japan

Organic semiconductors and graphene are described as new ﬁeld
effect transistors (FETs). Graphene shows high mobility as well as
long spin coherent length, because of the mass-less Dirac states andthe small spin-orbit coupling, relevant in spintronics. Ambipolar carrier
injection can be realized in organic semiconductors useful for future
optoelectronics.

62

Friday
AMD6 - 3
9:50

December 3
A Spin Coating Process for High Mobility of Organic
Transistor
P.-Y. Lo, J.-M. Ding, C.-W. Liu, C.-C. Chou, J.-P. Hu
ITRI, Taiwan

We reach device mobility of 2 cm2/V-s in this study. The high mobility
OTFT is integrated into a VGA display panel of OTFT-EPD with the
Sipix electrophoretic medium for further demonstration.
----- Break ----10:40 - 12:00

Room 501

AMD7: Oxide TFT (1)K. Tanigaki, Tohoku Univ., JapanK. Azuma, Shimadzu, Japan

AMD7 - 1:
10:40

Invited Characteristic of the Hysteresis on ZnO TFT
with SiO2 Gate Oxide
Z. Ye, M. Wong
Hong Kong Univ. of S&T, Hong Kong

Hysteresis in the current-voltage characteristic is observed in a ZnO
TFT with silicon dioxide as the gate dielectric; and presently attributed
to delay ﬂipping of electric dipoles located at the interface between the
dielectric and the channel. Potential application to the realization of anelectronic memory element is also reported.
AMD7 - 2
11:05

Improvements in the Characteristics of SolutionProcessed Zinc-Tin Oxide Thin-Film Transistors by
Adding H2O in the ZTO Solution
Y.-U. Lee, J.-S. Lee, Y.-J. Kim, S.-H. Cho, B. Kim,
Y.-H. Kim*, M.-K. Han
Seoul Nat. Univ., Korea*KETI, Korea

We fabricated solution-processed ZTO TFTs with various ZTO
solutions in order to investigate the effect of H2O on the electricalproperties of TFTs. In the case of the ZTO TFT fabricated with H2O
added ZTO solution, the mobility and subthreshold slope were better
than those of conventional ZTO TFTs.

63

AMD

Chair:
Co-Chair:Friday
AMD7 - 3
11:25

December 3
A Novel Method of Low Contact Resistance
Treatment in Solution Metal Oxide TFT Fabrication
K.-H. Su, C.-C. Yu, Y.-C. Lai, C.-Y. Chien, L.-Y. Lin,J. P. Tseng, F.-W. Chang
AU Optronics, Taiwan

In our research, IZO (In2O3-ZnO) prepared by sol-gel method wasapplied to thin ﬁlm transistor (TFT) fabrication as semiconductor
layer. To protect channel region in a vacuum system and improve thecontact interface between metal oxide semiconductor and S/D metal
simultaneously, we introduced a half-tone method to IZO TFT device.
AMD7 - 4L
11:45

High Stability of Inkjet Printed Indium Zinc Oxide
Thin Film Transistors
K.-B. Park, M.-K. Ryu, J.-B. Seon, K.-H. Lee,S.-Y. Lee,W. H. Jeong*, J. H. Bae*, H. J. Kim*
Samsung Advanced Inst. of Tech., Korea*Yonsei Univ., Korea

We report the fabrication of Indium zinc oxide transistors using
inkjet printing. The compositions of dropped IZO ﬁlms have highstoichiometric characteristics. The IZO ﬁeld effect transistors were
fabricated showing a ﬁeld-effect mobility of 0.2 cm2/Vs. An electricallyand thermally biased stability showed a threshold voltage deviation of
0.66 V for 3 hours.
----- Lunch ----13:20 - 14:40

Room 501

AMD8: Oxide TFT (2)Chair:
Co-Chair:

H.-H. Hsieh, AU Optronics, Taiwan
H. Hamada, Sanyo Elec., Japan

AMD8 - 1:
13:20

Invited Impact of Density of States Near ValenceBand on Photo-Stability in InGaZnO TFTs
J.-W. Park, W.-G. Lee, G.-S. Youn, D.-H. Lee, S.-H. Cho
Samsung Elect., Korea

From the photo-stability test for InGaZnO TFTs under gate bias, therelationship between threshold voltage shift and DOS near VBM wasanalyzed. The threshold voltage shift after 3 hours of gate bias stresswith illumination decreases to less than 3.5 V due to the reduction of
DOS near VBM.

64

Friday
AMD8 - 2
13:45

December 3
Photo-Current Response and Negative Bias
Stability Under Light Irradiation in IGZO-TFT
M. Tsubuku, T. Inoue, M. Takahashi, S. Yoshitomi,
H. Kanemura, K. Akimoto, A. Miyanaga, S. Yamazaki
Semiconductor Energy Lab., Japan

Photo-current response and negative bias stability under lightirradiation become issues in using In-Ga-Zn-O thin ﬁlm for TFT. We
report the improved photo-characteristics seen by comparing three
TFTs. A sample with good characteristics has small and fast photoresponse, and it is expected traps within a band gap would becomefew.
AMD8 - 3
14:05

Transportation Model Establishment of InGaZnO for
Thin Film Transistor Device Application
L.-F. Teng, P.-T. Liu, Y.-T. Chou, Y.-S. Fan
Nat. Chiao Tung Univ., Taiwan

AMD8 - 4L
14:25

Influence of TFT Structure & Process Condition on
the Extent of IGZO Stability & Mobility
Y.-C. Kao, C.-N. Lin, K.-Y. Tu, F. Wu, D. Tu, C. Shieh,
C. Wu, R. Lin, P. Lu, H.-M. Sung, W.-C. Tsai, C.-H. Chen
AU Optronics, Taiwan

IGZO TFT with different structures and process conditions werestudied. Structure of BCE type has higher mobility (10 cm2/Vs).
The stability & IV uniformity of IGZO TFT is improved by surface
modiﬁcation of IGZO ﬁlm. The T65/240Hz LCD display driven by IGZOTFT is also fabricated.
----- Break ----15:00 - 16:05

Room 501

AMD9: Nanodevice & Oxide TFT
Chair:
Co-Chair:J.-W. Park, Samsung Elect., Korea
H. Kumomi, Canon, Japan

65

AMD

The transportation model of on electrical metastability of a-InGaZnO
TFT is established. The generation of oxygen vacancies by theannealing in a vacuum led to an increased Ioff and large Vth shifts, while
N2 and O2 ambience effectively improve the device performance. A
physical mechanism is also reasonably proposed.

Friday
AMD9 - 1:
15:00

December 3
Invited Thin Film Transistors with Semiconductor
Nanowires
D. Pribat
Sungkyunkwan Univ., Korea

Semiconductor nanowires are new nanomaterials, studied for thin ﬁlm
transistors and electronics applications. Although these nanomaterials
are usually synthesised at moderate to high temperatures, they can betransferred to any kind of substrate after growth, paving the way for the
fabrication of displays and large area electronics systems on plastic.
AMD9 - 2
15:25

Amorphous In-Ga-Zn-Oxide TFTs with High Stability
Against Bias Temperature Stress
N. Saito, T. Ueda, S. Nakano, Y. Hara, K. Miura,
H. Yamaguchi, I. Amemiya, A. Ishida*, Y. Matsuura*,
A. Sasaki*, J. Tonotani, M. Ikagawa
Toshiba, Japan*Toshiba Mobile Display, Japan

Detailed investigations of amorphous In-Ga-Zn-Oxide (a-IGZO) TFT
revealed that the degradation under bias-temperature stress (BTS)
originated from hydrogen-diffusion phenomena. By optimizing the initial
a-IGZO ﬁlm and the intermediate annealing, and lowering hydrogenconcentration in insulators, BTS stability was improved. A 3.0-in. OLED
panel showed excellent luminance uniformity.
AMD9 - 3
15:45

The Instability of a-IGZO TFT Caused by the Drain
Induced Barrier Lowering (DIBL) and Parasitical TFT
M.-C. Hung, C.-H. Tu, W.-T. Lin, J.-J. Chang, P.-L. Chen
AU Optronics, Taiwan

The instability of a-IGZO TFT--including oxygen and water andphotosensitivity effect--has been studied widely, but no deﬁnitive
mechanism was given so far. In this work, the instability caused by thedrain induced barrier lowering (DIBL) as well as parasitical TFT wasstudied and a proposed model was provided.
Author Interviews
16:20 – 17:20

Supporting Organization:
Thin Film Materials & Devices Meeting66

Wednesday

December 1

Workshop on FPD Manufacturing,
Materials and Components
Wednesday, December 1
16:40 - 18:00

Room 409

FMC1: Optical Films
Chair:
Co-Chair:Y. Iimura, Tokyo Univ. of A&T, Japan
M. Miyatake, Nitto Denko, Japan

FMC1 - 1:
16:40

Invited Vacuum Particle Beam Methods for
Alignment of Reactive Mesogens
O. Yaroshchuk, R. Kravchuk, E. Telesh*, A. Khokhlov**,
O. Parri***
NAS of Ukraine, Ukraine*Belorussian State Univ. of Informatics & Elect.,
Belarus**Izovac, Belarus***Merck Chems., UK

FMC1 - 2
17:00

Negative Dispersion Retarder for 3D TV Applications
A. Geivandov, A. Lazarev, P. Lazarev*, S. Palto*,**Crysoptix, Japan*Kontrakt, Russia**Inst. of Crystallography RAS, Russia

Crysoptix has developed lyotropic liquid crystal (LLC) materials
for manufacturing coatable LCD retarders. LLC coated on plastic
substrates produces a negative dispersion TBF™ retarder thatprovides an efﬁcient optical compensation of LCD and can be usedfor 3D LCD applications: circular polarizers for screens and goggles;
patterned retarders for stereoscopic imaging.

67

FMC

The vacuum particle beam processes of liquid crystal alignment are
successfully extended to reactive mesogens (RMs). In this series,
etching process is preferable for planar/tilted alignment, while
deposition processes for homeotropic alignment. Combining theseprocesses various laminated and patterned structures are realizedshowing attractive solutions for optical and electronic ﬁlms.

Wed./Thu.
FMC1 - 3
17:20

December 1/2
Low-Reflective Wire-Grid Polarizers Exhibiting High
Performance in Visible Region
A. Takada, T. Yamada, N. Hanashima, K. Sasaki,
E. Takahashi, M. Suzuki*
Sony Chem. & Info. Device, Japan*Kyoto Univ., Japan

We have developed low reﬂective wire-grid polarizers in visible region.
The structure consists of absorptive layer/gap layer on wire-grid. Boththe high transmittance and low reﬂectance in the desired wavelength
range have been achieved by the selection of absorptive material andthe optimization of the thickness of each layer.
FMC1 - 4
17:40

Adhesive Design of Transparent PSA Sheets forMulti-Function Mobile-Use Display
H. Fumoto, H. Kishioka
Nitto Denko, Japan

LUCIACS series is transparent PSA sheets. It is suitable for laminatingof Multi-Function Mobile-Use display such as touch panels. The newadhesive could be designed without acid components and it is optimum
for the capacitive type touch panel.
Author Interviews
18:00 – 19:00

Thursday, December 2
9:00 -12:00

Poster/A.I. Room

Poster FMCp: FPD Manufacturing, Materials & Components
FMCp - 1
9:00

Light Guide with Reverse-Cone Textures for
Sheetless Backlight
C. G. Son, S. K. Hwang, J. S. Gwag, J. H. Yi, J. H. Kwon,
G. Park*, W. T. Moon**, S. H. Kim**, B. K. Kim**,
S.-H. Kang*
Yeungnam Univ., Korea*Sunlin Univ., Korea**LG Display, Korea

A lightguide panel with reverse-cone array textures on the top surface
is designed and fabricated to develop a sheetless edge-lit backlight.
The optimum structure of reverse-cone texture was obtained bysimulation and a lightguide without any prism sheet was fabricated byattaching the reverse-cone textures by using UV resin.

68Thursday
FMCp - 2

December 2
Brightness Enhancement in LCDs Using the High
Color Temperature (HCT) of Panel
H. J. Wang, Y. J. Kim, S. W. Lee, I. C. Park, M. C. Jun,
I. J. Jung
LG Display, Korea

Brightness improvement of LCD was achieved nearly 6% by meansof high color temperature (HCT) of panel and lamp tuning. A new hightransmittance property of blue resin was designed to achieve HCT ofpanel. For the compensation of panel color temperature down, highluminance lamp was used.
FMCp - 3

One Dimensional Coupler Lens for LED Collimation
W.-H. Yang, H.-H. Lin, C.-J. Hsu, Y.-N. Pao
ITRI, Taiwan

We have developed a one dimensional coupler lens for LCD Backlight.
At the optimum curvature and size, the light out through the lens has
a high-collimating emitting property, in which the simulation FWHM issmaller than 1.8˚. The FWHM of the prototype is collimated to 5.07˚.
FMCp - 4

Design of LED Illumination Devices Based on
Reflectors
B.-W. Lee, J. H. Lee, J.-H. Ko, J. Wang*, H. Kim*

FMC

Hallym Univ., Korea*GLS, Korea
LED illumination devices based on reﬂectors were designed to realize
speciﬁc illuminating distributions and compared to those based onlenses. Both reﬂector-based and lens-based LED lighting devices
showed the targeted distributions satisfactorily. However, reﬂectorbased devices exhibited higher optical efﬁciencies compared to lensbased devices due to reduced light losses.
FMCp - 5

Withdrawn

FMCp - 6

7-in. Field Emission Backlight Unit Assembled for
LCD Panel with TiO2 Coated Spacer
M.-T. Chian, W.-C. Shih*, J.-M. Jeng*, Y.-L. Lee*,
P.-T. Tai*, C.-H. Cheng*, J. Lo*
Chunghwa Picture Tubes, Taiwan*Tatung Univ., Taiwan

The ﬁeld emission backlight unit for LCD panel was fabricated in thiswork. In order to avoid the space charge on the spacer, the spacer iscoated with TiO2 which acts as the charge-leakage layer. By introducing
the TiO2 coated spacers, the assembly of the FEBLU becomes very
easy.
FMCp - 7

Withdrawn

69

Thursday
FMCp - 8

December 2
Properties of Transparent Conducting IZTOElectrode Deposited at Room Temperature
Y. D. Ko, J. Y. Kim, H. C. Joung, D. J. Son*, D. G. Jung*,
B. H. Choi**, Y. S. Kim***
Samsung Mobile Display, Korea*Sungkyunkwan Univ., Korea**Korea Inst. of Ceramic Eng. & Tech., Korea***Seoul Nat. Univ. of Tech., Korea

IZTO ﬁlms have been deposited by pulsed DC magnetron sputtering
onto glass substrate to investigate the effect of oxygen partial pressure.
The structural, electrical, optical properties were analyzed. In addition,
the grown IZTO ﬁlms were used in fabrication of organic-emitting
diodes (OLEDs) as anode to study the device performances.
FMCp - 9

Electrical Property Improvements by Inserting
Buffer Layer for Impurity-Doped ZnO Transparent
Electrodes Prepared by Magnetron Sputtering
Depositions
J. Nomoto, T. Hirano, T. Miyata, T. Minami
Kanazawa Inst. of Tech., Japan

Improvements of obtainable resistivity in Al- or Ga-doped ZnO (AZO
or GZO) thin ﬁlms prepared by magnetron sputtering depositions weresuccessfully achieved by inserting a very thin buffer layer. A resistivityof approximately 3 10-4 Ωcm was obtained in 150-nm-thick-GZO and-AZO thin ﬁlms prepared on glass substrates at 200oC.
FMCp - 10

Effects of Superimposing RF Power on the
Preparation of Impurity-Doped ZnO Transparent
Electrodes by DC Magnetron Sputtering
J. Nomoto, T. Hirano, T. Miyata, T. Minami
Kanazawa Inst. of Tech., JapanThe effects of superimposing RF power on the preparation oftransparent conducting impurity-doped ZnO ﬁlms by d.c. magnetron
sputtering depositions were investigated for transparent electrodes
used in FPDs. Superimposing appropriate RF power produced adecrease in both deposition damage and obtainable resistivity as wellas an increase of deposition rate.
FMCp - 11

Improving S/D Resistance in Zinc Tin Oxide TFT with
Atmospheric Plasma Surface Treatment
S. J. Oh*,**, Y. H. Kim*, J. W. Kang**, M. S. Oh**KETI, Korea**Dankook Univ., Korea

Atmospheric plasma treatment of zinc tin oxide (ZTO) surfaces has
been studied and demonstrate to be efﬁcient method in improving
the performance of TFT characteristics. Our result suggest that
atmospheric plasma treatment is a cheaper, more convenient,and more efﬁcient method than low-pressure plasma treatment for
improving device performance.
70Thursday

December 2

FMCp - 12

Optimisation of a Mass Analyzed Multiple Beamline
for the Ion Implantation of Very Large FPD
Substrates
D. Aitken
Superion, UK

Beam extraction from a large area source with an array of parallel long
double extraction slots is optimized using magnetic ﬁelds to minimize
plasma losses between these double slots. This paper also introduces
a variable geometry analyzing magnet giving control of resolving power
and the transmitted ion mass range.
FMCp - 13

Development of Dose Distribution Control as aCountermeasure against Pressure Variations
Resulted from Photoresist Outgassing
T. Matsumoto, K. Imai, M. Konushi, K. Orihira,Y. Nakazawa, M. Onoda, K. Nakao, Y. Inouchi,
J. Tatemichi, M. Konishi, M. Naito
Nissin Ion Equipment, JapanAn accurate dose distribution control system was developed for an ion
implanter for LTPS-TFT to improve dose uniformity under photoresist
outgassing. Excellent uniformity was exhibited even in a case of a gas
pressure increase of one order of magnitude. The system does nothave a negative impact on the throughput.

FMC

FMCp - 14

Organic Light-Emitting Diodes Fabrication by
Electrospray Deposition Process
W. T. Hwang, N. H. Kim, H. Y. Chae
Sungkyunkwan Univ., Korea

We have demonstrated organic light emitting diodes (OLED) fabrication
with electrospray deposition (ESD) as a solution process alternative.
OLED fabricated with ESD shows good performance in terms of
surface smoothness and brightness. Current efﬁciency (cd/A) of device
which is fabricated by ESD shows better performance than that ofspincoated device.
FMCp - 15

Optimum Design of Single-Slit Mask Applied forHigh Performance TFT-LCDs
S.-J. Choi, Y.-S. Im, G.-B. Hui, F. Zhang, K.-Y. Kim*,
W.-S. Yoon*, J.-S. Xue, J.-Y. Lee
BOE Tech. Res. Inst., China*Beijing BOE Display Tech., China

Optimum single slit mask design applied by gray-tone photolithography
had been established by simulation and experiments. We found outthat transmittance of single slit was inﬂuenced by TFT channel length,
size and shape. We obtained optimum design factor of single slit andachieved a ﬁne channel to improve TFT characteristics.

71

Thursday
FMCp - 16

December 2
Analysis and Fabrication of PSS Technology
Applied in TFT-LCD Displays
C. W. Su, A. Mochizuki*, J. T. Lien
Chunghwa Picture Tubes, Taiwan*Nano Loa, Japan

We have succeeded to achieve 1.7 µm cell gap thickness and goodliquid crystal alignment. In ﬁnally results, the response time (rising timeand falling time) is less 1 ms. However, PSS technology is compatibility
in an LC panel mfg with conventional mfg lines. Besides, we also havesucceeded to develop 15.4-in. PSS-LCD.
FMCp - 17

New Structure of Transflective LCD without HMDS
Y. Wu, J. Ma, S. Huo, X. Luo, Z. Xia, Z. Ling
Shanghai Tianma Micro-Elect., China

An approach of coating organic material onto the silicon nitride insulate
layer without HMDS process is invented, eliminating the peeling off
phenomenon originated from the etching undercut. The panel process
is simpliﬁed, and a fully function sample is fabricated.
FMCp - 18

Transparent Conductive Film Incorporating Silver
Halide Photographic Technologies
T. Kuriki, A. Ichiki, K. Yokota
FUJIFILM, Japan

Fujiﬁlm has developed “EXCLEAR”, a new transparent conductive
ﬁlm based on silver-halide photography technologies, offering
advanced transmittance, advanced ﬂexural performance and wider
sheet resistance ranging from ultra-low (0.2 ohm/sq) to high (several
thousand ohm/sq) with the combination with inorganic / organic
transparent conductive materials.
FMCp - 19

Wettability Improvement by Silica Nanoparticle for
TIPS-Pentacene
K. Matsukawa, S. Yamazaki*,**, S. Tokai*, M. Yoshikawa**,
T. Nagase**, T. Kobayashi**, Y. Michiwaki***, S. Watase,
M. Watanabe, H. Naito**
Osaka Municipal Tech. Res. Inst., Japan*Citizen Holdings, Japan**Osaka Pref. Univ., Japan***Fuso Chem., Japan

It is essential to control the wettability of soluble organic
semiconductors on gate dielectrics for organic ﬁeld-effect transistors
using solution processes. We found that the addition of a small
amount of silica nanoparticles (SNPs) drastically improves thewettability of soluble organic semiconductor of 6,13-bis(triisopropy
lsilylethynyl)pentaceneonto the hydrophobic gate dielectric of poly(methylsilsesquioxane).

72Thursday
FMCp - 20

December 2
Photo-Patternable Silicon-Organic Hybrid Glasswith Silsesquioxane Derivatives
T. Fuke, D. Yokoyama, Y. Tashiro, T. Sekito, T. Nonaka
AZ Elect. Materials, Japan

We succeeded in development of photo-patternable Silicon-Organic
Hybrid Glass with siloxane derivatives comprised of silsesquioxane
incorporated with silica unit. The cured ﬁlm has high opticaltransparency, thermal stability and chemical durability together withexcellent photolithographic property. Here we demonstrate successful
usage of photo-patternable silicon-organic hybrid glass materials andlithography patterning.
FMCp - 21

Interface Engineering with a Hole-Transporting SAM
for Organic Electronics
C.-L. Lin, W.-S. Hsieh, S.-M. ChangNat. Taipei Univ. of Tech., Taiwan

A series of organic compounds based on triphenylamine were
designed with two substitute groups and a carboxyl group, which wasconnected to TiO2 surface by self-assembled monolayers (SAMs). The
modiﬁed TiO2 was applied in organic electronics and measured theoptical properties to conﬁrm the characteristic of light-harvesting.
FMCp - 22

FMC

Evaluation of TIMs on Thermal Dissipation
Performance for Power LEDs
P. F. Ji, B. H. Kim, W. K. Hong, C. H. Moon
Hoseo Univ., Korea

This experiment evaluates the function of TIMs in thermal managementby comparing the effects of TIMs and ceramic substrates on thermal
dissipation performance for high power LEDs. It was demonstrated
that ceramic substrate gave a bigger change than TIMs in thermal
dissipation characteristic.
FMCp - 23

Properties of Transparent Conductive Ga-doped
ZnO Films in Bending
K. Nagamoto, Y. Matsubayashi, T. Kondo, Y. Sato*,
H. Makino*, N. Yamamoto*, T. Yamamoto*
LINTEC, Japan*Kochi Univ. of Tech., Japan

Transparent conducting polycrystalline Ga-doped ZnO (GZO) ﬁlms
were deposited on polyester substrates by ion-plating deposition withdirect current arc-discharge at process temperature of less than 100oC.
We evaluated the mechanical bending properties of GZO ﬁlms andobtained the relationship between bending properties of GZO ﬁlms andprocess temperature.

73

Thursday
FMCp - 24

December 2
Passivation Effect of F+Y Monolayer on YttriaStabilized Zirconia (YSZ) Layers of LTPS
S. Horita
JAIST, Japan

Crystallized Si ﬁlms are obtained on glass substrates covered with
poly-YSZ layers at temperature lower than without YSZ by over 100oC.
From XPS analysis, we proposed F+Y monolayer formation on thechemically cleaned YSZ layer, which supports Si crystallization.
Crystallization model with it can explain the results quantitatively.
FMCp - 25

Atmospheric Plasma and Process for Liquid Crystal
Alignment
O. Yaroshchuk, R. Kravchuk, S. Pogulyai, V. Tsiolko
NAS of Ukraine, Ukraine

The method of liquid crystal alignment is developed based on
combination of atmospheric plasma and rubbing processes. In thistandem, rubbing insures uniformity, while plasma process provides
tuning of anchoring parameters. High-quality alignment is realized witha pretilt angle controlled in the range 0o-90o. The samples demonstrate
excellent electro-optic performance.
FMCp - 26

Effective Method for Electrode Pattern Positioningin Touch Screen Panel
S.-J. Seok, Y.-J. Park, S.-H. Park, O. Kim
Pohang Univ. of S&T, Korea

We propose the effective way of internal electrode pattern positioning
in projected capacitive touch screen panel. By changing the wayof alignment, the distance, and height between two electrodes, weestimate capacitance values and the change of each value using asimulator. Finally we present a proper example of placement.
FMCp - 27L Enlargement of Polycrystalline Si Grain on
Polycarbonate Substrate Prepared by Conventional
Laser Annealing
N. Kawamoto, T. Imamura*, Y. Tomizawa*, K. Tadatomo
Yamaguchi Univ., Japan*Teijin, Japan

In this paper, we discuss the crystal growth mechanism ofpolycrystalline Si grain by conventional laser annealing on
polycarbonate substrate. We show the polycrystalline Si grain of
diameter with over 150 nm by conventional laser annealing on
polycarbonate substrate.

74

Thursday

December 2

FMCp - 28L Display Performance of PSVA-LCD Using Reactive
Mesogen Monomer Induced Alkyl Spacer
R. Kawakami, S. Niiyama, Y. Nakagawa*, Y. Soda*
Asahi Glass, Japan*Optrex, Japan
We proposed a novel UV curable reactive mesogen (RM) monomer for
Polymer-Stabilized Vertical Alignment (PSVA) LCD. The experimental
results reveal that the PSVA by the novel RM monomer realizes
less image sticking and better response time. In addition, the novel
monomer needs less UV irradiation energy to be cured.
FMCp - 29L Dye Absorption Properties of the TiO2 Electrodes
Coated with Al2O3 for a Dye Sensitized Solar
Cell(DSSC)
S.-C. Choi, H.-S. Lee, S.-H. Sohn
Kyungpook Nat. Univ., Korea
The surface of TiO2 electrode in the DSSC was coated with Al2O3
nanoparticles by a sol-gel method. Because Al2O3-coated TiO2
(pH9.48) is more basic than bare TiO2(pH3.9), the higher basicity of
Al2O3-coated TiO2 surface favors dye attachment through its carboxylic
acid groups. Thus dye absorption of Al2O3-coated TiO2 is enhanced.

FMC

FMCp - 30L Surface Modification of the TiO2 Electrode for Dye
Sensitized Solar Cells (DSSCs)
H.-S. Lee, S.-C. Choi, S.-H. Sohn
Kyungpook Nat. Univ., Korea
The surface of TiO2 electrode, photo-anode in DSSCs, was coated with
SiO2, Al2O3 nanoparticles in simple surface treatment way, a kind of
the modiﬁed sol-gel method. It is found that the surface coating of TiO2electrode with nanoparticles is dependent on the concentrations ofprecursors and pH of TiO2 suspensions.
FMCp - 31L The Investigation on the Relation between CD Bias
and SD Layer Area on the Glass Substrate
Z. Weifeng, X. Jianshe, L. Xiang, H. Guanbao, Z. Feng
BOE Tech. Group, China
The relation between CD bias and SD layer area on the glass
substrate has been investigated. It is found GTM and HTMʼs situation
is different. HTM CD Bias has an increasing trend while SD layer area
increases. But GTM CD bias doesnʼt change. The difference is causedby transmittance difference.

75Thursday

December 2

FMCp - 32L Spin-Coatable Gate Dielectric for Organic Thin Film
Transistor
Y. Isogai, T. Katoh, K. Sugitani, T. Hirano, M. Tada,
Y. Fujisaki*, Y. Nakajima*, T. Yamamoto*, T. Suzuki
ZEON, Japan*Japan Broadcasting, Japan
We have developed spin-coatable gate dielectric for ﬂexible organic
thin ﬁlm transistor. It is applicable to P-type and N-type organic
semiconductor with stable TFT characteristics. Under long term bias
stress to gate, little hysterisis and threshold shift was detected. It canmeet the cost reduction of manufacturing ﬂexible displays.
FMCp - 33L Quasi-Single-Crystal Si Thin Film for System on
Panel Using SiGe Precursor and Laser Lateral
Crystallization
A. Hara, K. Hirose*, J. Suzuki*, K. Kondo, K. Kitahara*
Tohoku Gakuin Univ., Japan*Shimane Univ., Japan
We have fabricated a quasi-single-crystal (QSC) Si thin ﬁlm on
glass substrate with a SiGe ﬁlm as a precursor using cw laser lateralcrystallization. The fabricated QSC Si ﬁlm is poly-Si; however, most of
the grains, which have large and ribbon-like shape, have {111} surface
orientation and <011> growth direction.
FMCp - 34L Low-Hydrogen-Content Transparent SiNx Film
Prepared at Low-Temperature by Surface-WavePlasma CVD
S. Ueno, M. Yomogida*, M. Suzuki, Y. Konishi, K. Azuma
Shimadzu, Japan*Shimadzu Emit, Japan
We have succeeded in obtaining transparent SiNx ﬁlms with a water
vapor transmission rate (WVTR) of less than 1x10-6 g/m2/d. We
developed a surface-wave-plasma CVD system and found that the
WVTR of the SiNx ﬁlm could be controlled by changing the distance
between the plasma and the substrate.
FMCp - 35L Highly Foldable Polarizer Film for Anti-Reflection of
OLED Display
H. S. Shim, H.-J. Kwon, S. Kim, Y. T, Chun, I. S. Kee,S. Y. Lee, S. O. Hwang*, Y. W. Kim*, H.-R. Chung*,
C. S. Lee*
Samsung Elect., Korea*Cheil Inds., Korea
Development and evaluation of highly foldable polarization ﬁlm for antireﬂection of AMOLED display is described. This ﬁlm can be folded up
to 100,000 times at about 1.6 mm radius while maintaining the 90%transparency and anti-reﬂectivity as the conventional one.

76

Thursday

December 2

FMCp - 36L Improvement of Light Extraction Efficiency in
Mercury-Free Flat Fluorescent Lamp(MFFL) using
Sub-Wavelength Structures
B. J. Oh, J. C. Jung, I. W. Seo, O. Kwon, K.-W. Whang
Seoul Nat. Univ., Korea
Sub-wavelength structures and formed on the surface of mercury-free
ﬂat ﬂuorescent lamp(MFFL) front glass plate using CF4 and O2 plasma
etching. Transmittance and light extraction efﬁciency of MFFL improved
through the sub-wavelength structures formed on the glass surface
which effectively has gradient refractive index change.
FMCp - 37L An Edge-Lit Backlight Unit with a Newly Designed
Asymmetric Pyramid Sheet
M. Lee, S.-T. Hur*, S.-W. Choi*
Vinnosys, Korea*Kyung Hee Univ., Korea
An edge-lit backlight unit (BLU) for small size liquid crystal display(LCD) was suggested. In this BLU, a newly designed single pyramid
sheet replaced the two orthogonally placed prism sheets used forcollimating.
FMCp - 38L Effect of CuO Nanoparticles Mixed in PEDOT:PSS
Buffer Layer on Organic Solar Cells

FMC

Sang Hoon Oh, Jung Joohye, Hyun Jae Kim
Yonsei Univ., Korea
In this research, the effect of poly(3,4-ethylendioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) buffer layer with CuO
nanoparticles on organic solar cell was investigated. CuO
nanoparticles mixed in PEDOT:PSS ﬁlm can improve short circuitcurrent density due to their low resistivity. This method can contribute to
get high efﬁciency organic solar cells.
----- Lunch -----

77

Thursday

December 2

15:00 - 16:00

Room 204

FLX7/FMC6: Materials & Components for Flexible Displays
Chair:
Co-Chair:T. Tomono, Toppan Printing, JapanT. Ogura, Nippon Steel, Japan

FLX7/
FMC6 - 1
15:00

Transparent High Barrier Coating on Flexible Film
Substrate by Roll to Roll PECVD System
H. Tamagaki, T. Okimoto, T. Segawa
Kobe Steel, JapanA new Roll to Roll PECVD System, which generates plasma between
a pair of rollers, is developed for the deposition of SiOx transparent
high barrier coating on ﬁlm. At SiOx deposition, the deposition rate of
900 nm-m/min and barrier performance (WVTR) below 5x10-4 g/m2day
is demonstrated.
FLX7/
FMC6 - 2
15:20

Robust Folding Structure for a Foldable Display
H.-J. Kwon, H. S. Shim, S. K. Kim, Y. T. Chun, I. S. Kee,S. Y. Lee
Samsung Advanced Inst. of Tech., Korea

Design and analysis of folding structure applied hyperelastic material
for foldable display are described. This structure allows to realize
extendable and foldable large display using conventional glass panels.
From Finite Element Method (FEM) analysis and mechanical andoptical experimental results, we can conﬁrm the design of more stablefolding structure.
FLX7/
FMC6 - 3
15:40

Direct Connection of LSI Chips to Polyethylene
Naphthalate Using Au Cone Bump
T. Shuto, N. Watanabe, A. Ikeda, T. Higashimachi*,T. Asano
Kyushu Univ., Japan*Sojo Univ., Japan

We show that the direct connection of LSI chip to PEN (polyethylene
naphthalate) ﬁlm can be realized by using Au cone bump for ﬂexible
display. More than 10,000 connections at 20 µm pitch with low
resistance can be realized at 150 ℃.
----- Break -----

Author Interviews
18:00 – 19:00

78

Friday

December 3
Friday, December 3

9:00 - 10:20

Room 409

FMC2: Manufacturing Technologies (1)Chair:
Co-Chair:F. Pieralisi, Appl. Materials, Germany
K. Miyazawa, Chisso, Japan

FMC2 - 1
9:00

Split Sputter Mode - A Novel Deposition Method for
TFT Metallizations
F. Pieralisi, M. Hanika, E. Scheer, M. Bender
Appl. Materials, Germany

The novel Split Sputter Mode (SSM) method, based on the
superposition of two complementary ﬁlm distributions, provides highly
uniform and homogeneous metallization layers. An analytical model ispresented and the critical deposition parameters are evaluated. Finally,
the effectiveness of the SSM technique is demonstrated throughaluminium-coated large area substrates.
FMC2 - 2
9:20

Development of Sputtering Process for IGZO TFT on
Large Substrate
T. Yukawa, T. Kurata, M. Arai, J. Kiyota, S. Sato,
K. Takahashi, S. Ishibashi, K. Saito

In recent years, In-Ga-Zn-O (IGZO) has been drawing attention as highmobility material for panel performance improvement. In this report, we
discuss uniformity of IGZO deposited by vertical type AC Magnetron
Sputtering Equipment that is most widely used in the panel production
line of more than Gen. 6 size.
FMC2 - 3
9:40

Microstructure Analysis and Electrical Properties of
Cu-Mn Electrode for Back-Channel Etching a-IGZO
TFT
P. Yun, J. Koike
Tohoku Univ., Japan

Cu-Mn alloy was investigated as an electrode on a-IGZO ﬁlm becauseof its good adhesion, a diffusion barrier and a wet etching selectivityof about 10:1 with IGZO ﬁlm. Contact property showed non-linear
behavior with Al and Cu, while Ohmic contact was obtained with Cu-Mn
and Ti after annealing.

79

FMC

ULVAC, Japan

Friday
FMC2 - 4
10:00

December 3
Role of Oxygen Atoms in the Growth of Magnetron
Sputter-Deposited ZnO Films
A. Morita, I. Watanabe, H. Shirai
Saitama Univ., Japan

Among various deposition methods of ZnO ﬁlms, a magnetron
sputtering has been most widely used for fabricating ZnO ﬁlms in large
area at low cost. However, the role of oxygen atoms in the growth is still
controversial. We demonstrate the role of oxygen atoms in the growthof ZnO ﬁlms.
----- Break ----10:40 - 12:00

Room 409

FMC3: Manufacturing Technologies (2)Chair:
Co-Chair:K. Miyazawa, Chisso, Japan
T. Takeda, Nagase ChemteX, Japan

FMC3 - 1
10:40

Electroless Cu Metallization for FPD Manufacturing
B. Beck, B. Dosse, F. Brüning, J. Etzkorn
Atotech Deutschland, Germany

The feasibility of using wet chemical copper deposition for Thin Film
Transistor gate metallization was demonstrated. Environmentallyfriendly processes were then developed that produced adherent
copper deposits on smooth molybdenum layers.The samples werecharacterized by means of Interference Microscopy, 4-Point Probe
Measurement, FIB/SEM and Tape Test.
FMC3 - 2
11:00

Enhancement of Scribing Stability for Laminated
TFT-LCD
C.-H. Tseng, Y.-C. Liu, M.-S. Chen, T. Huang
AU Optronics, Taiwan

Reducing the thickness of LCD panels enhance the aesthetic andease use of portable devices. Laminated cells have a potential issue
of unstable control during scribing process. In this study, we illustrated
a new design which enhances the supportability and offers a reliable
status during scribing for laminated cells.
FMC3 - 3
11:20

Novel Structure of Acoustic Inkjet Method for
Dispensing Large Phosphor Particles
Y. Nomura, Y. Hosono, K. Higuchi, S. Enomoto,I. Amemiya
Toshiba, Japan

A novel acoustic inkjet method with a conveyed ﬁlm has been
investigated for stable ink supply and droplet ejection of ink containing
large-phosphor-particles. High accuracy of ejected droplet volumes(5%) was proved in the case with water used as ink. Moreover, droplets
containing 20-micrometer-phosphors were ejected by the novel method.
80Friday
FMC3 - 4
11:40

December 3
Layout and Process Optimization Using Proximity
Exposure Lithography Simulation
B. Meliorisz, U. Hofmann, N. Unal, J. Sachen
GenISys, Germany

This paper presents the beneﬁts of using optical proximity lithography
simulation for process and OPC development, layout optimizationand veriﬁcation. The simulation provides accurate optical, image
formation and resist processing results. We show several examples that
demonstrate how simulation can contribute to improving lithography
processes when using proximity printing exposure.
----- Lunch ----13:20 - 14:40

Room 409

FMC4: Materials (1)Chair:
Co-Chair:Z. Liang, Corning Display Tech., USA
R. Yamaguchi, Akita Univ. Japan

FMC4 - 1:
13:20

Invited Post-Modern FPD Manufacturing Environmentally Sustainable Facility Construction
and Operation, and Lessons from AdjacentIndustries

FMC

D. Carkner, M. O’Halloran, T. Johnson, A. Maule
CH2M HILL, USA
A review of techniques for improved efﬁciency, environmental
responsibility, and cost performance in FPD manufacturing, informedby examples of successful methods used in adjacent industries, suchas semiconductors, solar PV, and data centers. Practical examples ofenergy, water, and materials savings achieved together with cost andschedule reductions are provided.
FMC4 - 2:
13:40

Invited Tunable Microwrinkles for Display Device
Elements
T. Ohzono, H. Monobe, Y. Shimizu
AIST, Japan

Microwrinkles on a surface-modiﬁed soft elastomer form underlateral compression through surface Eulerʼs buckling. The wavy
microstructures are reversibly altered by adding strain. We brieﬂyreview the transformation of microwrinkles and the preliminary
applications: liquid crystal alignment, liquid micromanipulation andmicroswitch array, which are applicable to the display device elements.

81Friday
FMC4 - 3
14:00

December 3
LCD Performance and Evaluation on Substrate
SurfaceZ. Liang, R. Greene, R. Schweiger, R. White, X. Zhang*Corning, USA*Dalian Maritime Univ., China

TN mode LC cells with 4 µm cell gap were fabricated using glass
samples with variety of SDs. The threshold cell gap variation for JND=1
is about 0.15 µm which is in good agreement with human eye direct
inspection. JND reading is a good predictor to evaluate spots mura.
FMC4 - 4
14:20

Ultra Fine Pitch Anisotropic Conductive Film with
Fixed Array of Conductive Particles
R.-C. Liang, Y. Morita, S. Tseng, S. Rokutanda,
J. Chung, J. McNamara, Z.-A. G. Wu,
Trillion Science, USA

Ultra ﬁne pitch Anisotropic Conductive Adhesive Film with ﬁxed array of
conductive particles has been developed and manufactured. This novel
ACF has demonstrated superb performance at less than 10 µm pitch
in LCD driver IC bonding. Conductive particles are arranged in arraypattern providing uniform contact resistance with reliable performance.
----- Break ----15:00 - 16:20

Room 409

FMC5: Materials (2)Chair:
Co-Chair:

D. L. Schulz, North Dakota State Univ., USA
T. Nonaka, AZ Elec. Mat., Japan

FMC5 - 1:
15:00

Invited Development of Low Temperature SolutionProcessed Metal-Oxide TFT Materials
J. Steiger, R. Anselmann, H. Thiem, A. Hoppe,
D.-V. Pham, A. Merkulov
Evonik Degussa, Germany

We will present recent developments at Evonik in regard to material
synthesis and solution based processing techniques of metal oxides
for the use in TFT applications. Mobilities of higher than 10 cm²/Vs
in bottom-gate devices at a processing temperature of 350 C will bedemonstrated.

82Friday
FMC5 - 2:
15:20

December 3
Invited Electrospun a-Si using Liquid Silane/Polymer
Inks
D. L. Schulz, J. M. Hoey, J. Smith, J. Lavaasen, C. Braun,
X. Dai, K. Anderson, A. Elangovan, X. Wu, S. Payne,
K. Pokhodnya, I. Akhatov, L. Pederson, P. Boudjouk
North Dakota State Univ., USA

Amorphoussiliconnanowires(a-SiNWs)
werepreparedbyelectrospinning
cyclohexasilane(Si6H12)
admixedwithpolymethylmethacrylate (PMMA) in toluene. Raman spectroscopy
characterization of these wires (d~50-2000 nm) shows 350 C
treatment yields a-SiNWs. Porous a-SiNWs are obtained using avolatile polymer.
FMC5 - 3
15:40

Characterization of New Silsesquioxane andSilsesquiazane Polymers
Y. Tashiro, T. Fuke, T. Sekito, D. Yokoyama, T. Nonaka
AZ Elect. Materials, Japan

We succeeded in development of new silsesquioxanes andsilsesquiazanes by new synthesis method. New Silsesquioxanes (SQ)
are low temperature curable and provide superb pencil hardness
and high optical transparency. And new silsesquiazanes (SQAZ)
provide high refractive index and high optical transparent ﬁlm. Here wedemonstrate properties as new coating material.

FMC

FMC5 - 4
16:00

Intrinsically Conductive Polymer Dispersions andInks for Transparent ElectrodeT. Isaji, M. Abe
Nissan Chem. Inds., Japan

Organic solvent dispersions and inks of intrinsically conductive polymer(polyaniline based) with high conductivity have the possibility to be
used for transparent electrode.
Author Interviews
16:20 – 17:20

Supporting Organizations:
The Japan Society for Printing Science and Technology
Japan Society of Colour Material
The Technical Association of Photopolymers, Japan
Society of Photographic Science and Technology of JapanThe Society of Radtech, JapanThe Japanese Research Association of Organic Electronics Materials
Japan Electronics Packaging and Circuits Association

83Thursday

December 2

Workshop on Plasma Displays
Thursday, December 2
13:20 - 14:40

Room 501

PDP1: Panel Configuration
Chair:
Co-Chair:L. F. Weber, Consultant, USA
R. Murai, Panasonic, Japan

PDP1 - 1:
13:20

Invited Technology for 3D PDPs at LG Electronics
S.-H. Moon, D.-H. Kim, J.-H. Lee, J.-M. Ra, M.-J. Jeon,
K.-R. Choi
LG Elect., Korea

Recently, the market of 3D TVs has become larger. LGE has developed
3D PDP TV and released these models at July. Also, LGE has
successfully developed a prototype 3D Multi-vision display of 180-in.
screen which consists of 9 sub-modules of 60” PDP TV.
PDP1 - 2
13:40

50-in. Full HD Shadow Mask PDP
Z. Fan*,**, X. Zhang*,**, Z. Wu*,**, Y. Tu*, L. L. Yang*,
B. P. Wang*,**, Q. Zhang**Southeast Univ., China**Nanjing Huaxian High Tech., China

The research of discharge performance of SMPDP with 0.19 µm RGB
0.57 µm pitch, rectangular cell and Delta arrangement is done on
experimental platform. It proves high-resolution can be realized throughoptimization of cell structure and parameter, without affecting theperformance. The 50-in. FHD SMPDP is developed.
PDP1 - 3
14:00

Study on the Discharge Characteristics of a
Diagonal Discharge AC PDP with Facing Electrodes
D.-H. Kim, J. Heo, J.-W. Ok, Y.-G. Kim, D.-H. Kim,
H. J. Lee, H.-J. Lee, C.-H. Park
Pusan Nat. Univ., Korea

In order to improve electro-optical characteristics, the new facing
discharge structure has been investigated. The proposed structure,
which has a diagonal discharge path, make it possible to gain a low
power consumption, a high luminance and a high luminous efﬁcacy
compared with those of conventional coplanar structure.

84

Thursday
PDP1 - 4
14:20

December 2Comparative Study on Discharge Characteristics of
FHD and Quad-FHD PDPs
Y.-S. Choi, J.-B. Lee, S.-Y. Cho, S.-B. Shim, C.-H. Park,
D.-H. Kim, H. J. Lee, H.-J. Lee
Pusan Nat. Univ., Korea

We have investigated the luminous efﬁcacy of various cell resolution.
The luminance and luminous efﬁcacy decreased as the resolution
increased from FHD to QFHD, because of higher plasma loss. Absolute
efﬁcacy of delta cell array QFHD PDP reaches about1.03 lm/W.
----- Break ----15:00 - 16:20

Room 501

PDP2: Picture Quality
Chair:
Co-Chair:H. Tolner, Southeast Univ., China
M. Uchidoi, Panasonic, Japan

PDP2 - 1:
15:00

Invited Advances in Moving Picture Quality of
Recent PDPs
I. Kawahara*,***Panasonic Plasma Display, Japan**APDC., Japan

PDP2 - 2
15:20

Skin Color Enhancement Based on Preferred Skin
Color in PDPs
J. Jiang, Z.-H. Liang, X.-N. Zhang, C.-L. Liu
Xi’an Jiaotong Univ., China

A skin detection method and the preferred skin color region are
obtained via psychological experiment. Then the skin color is enhanced
according to the distance between it and preferred skin color. The
experiment results show that the enhanced skin colors are morenatural and agree with human vision and psychology.

85

PDP

Image quality of PDP has been greatly improved in recent years,
including native contrast and moving picture performance. Especially,
moving picture resolution, through elaborate signal processing and fast
phosphors developed for 3D plasma shows stunning superiority also
in 2D mode over other devices. Comparison between latest models is
also covered.

Thursday
PDP2 - 3
15:40

December 2
Two-Stage Dither Combined with Minor Pixel
Separation for Gray Scale Enhancement
J.-F. Huang, Y.-G. Wang, X.-N. Zhang, Z.-H. Liang
Xi’an Jiaotong Univ., China

Order dither combined with minor pixel separation (MPS) can improve
the gray levels in the dark area. Random dither combined with MPS
can bring back gray-level lost in the middle and high gray ranges.
The experiment results show that the gray scale can be expressedsmoothly without structural pattern noise.
PDP2 - 4L
16:00

High Luminance Twin-path Discharge Cell with
Auxiliary Pulses for Ultra-High-Resolution PDP
Y. Hirano, K. Ishii, T. Usui, Y. Murakami
NHK, Japan

We have proposed a new electrode structure that uses twin-pathdischarges for ultra-high-resolution PDP. When auxiliary pulses areapplied to the address electrodes during the sustaining discharge
period, the luminance is improved less than 60% and the luminous
efﬁciency is also improved by 10% by using 3-D ﬂuid simulation.
----- Break ----17:00 - 18:00

Room 204

PDP5: Late News Session (Protective Layer)
Chair:
Co-Chair:

K. C. Choi, KAIST, Korea
S. Mikoshiba, APDC., Japan

PDP5 - 1L: Invited Display and Lifetime Characteristics of AC
17:00
PDPs with SrO-MgO Double Protecting Layer
K.-W. Whang, H.-W. Cheong, J.-C. Jung, T.-H. Lee,O. KwonSeoul Nat. Univ., Korea
We have reduced the long aging time of AC PDP with SrO-MgO double
protecting layer by introducing a special process to the front dielectric
layer and achieved high luminous efﬁcacy. It is essential to study theaddress discharge and lifetime characteristic of AC PDP with SrO-MgO
double protecting layer.
PDP5 - 2L
17:20

An AC PDP with an Air-Stable CaMgO Protective
Layer
Y. Motoyama, D. Kato, M. Seki
NHK, Japan

We have successfully reproduced video images on a PDP that was airsealed at 450 C and had a Ca0.36Mg0.64O protective layer. The sustain
pulse was obtained at 135 V, which was lower than the 170 V required
when the conventional MgO protective layer is used.

86Thu./Fri.

December 2/3

PDP5 - 3L
17:40

Inverse Relationship between Exo-Electron Currents
and Statistical Delay of AC PDPs
Y. Kuang, K.-H. Choi*, Y.-S. Kim
Hongik Univ., Korea*Southeast Univ., China

A relationship between exo-electron current and statistical relationshipwas examined on AC PDP test panels with or without MgO nanocrystals sprayed on MgO layer. The results indicated that the statisticaldelay is inversely proportional to exo-electron currents, but its
proportional constant varies signiﬁcantly, depending on the presence of
MgO nano-crystals.
Author Interviews
18:00 – 19:00

Friday, December 3
9:00 - 12:00

Poster/A.I. Room

Poster PDPp: Plasma Displays
PDPp - 1

Characterization of Protective Layer Materials for
PDPs by the EUPS Observation
T. Nakayama*, M. Terauchi*,**, K. Yoshino*,**, T. Tsujita*,**,
M. Nishitani*,**, T. Ishituka***, T. Tomie***, Y. Morita*,***Panasonic, Japan**Osaka Univ., Japan***AIST, Japan

PDPp - 2

Electron Energy Band Structure of Sprayed
Functional Layer on MgO Measued by Secondary
Electron Emission Using g-FIB System
J. H. Choi, C. G. Son, Y. J. Hong, K. A. Lee, H. S. Uhm,
E. H. Choi
Kwangwoon Univ., Korea

We have studied the electron energy band structure of MgO single
crystal based on the Auger neutralization theory using by gammafocused ion beam (g-FIB) system. We measured secondary electron
emission characteristics of MgO single crystals which have different
crystal orientation. We measured the energy band structure
fe(a) function in valence band from secondary electron emission
characteristics with He ion source (24.58 eV) in the three kinds of MgO
single crystal with respective (100), (110), (111) orientations.
87

PDP

We applied EUPS (EUV photoelectron spectroscopy) to thecharacterization of protective layer materials. EUPS has a higher
sensitivity than XPS to detect the outermost surface conditions. We
found that hydroxide and carbon absorption on CaO progressed
deeper from the surface and that they are more stable than on MgO.

Friday
PDPp - 3

December 3
Electro-Optical Characteristics of Degraded
Functional Layer in AC PDPs
K. A. Lee, C. G. Son, J. H. Choi, Y. J. Hong, E. H. Choi
Kwangwoon Univ., Korea

We have studied electro-optical characteristics of different kinds of the
MgO layer during the continuous discharge in AC-PDP. For observationof each degraded MgO layer characteristics, we measured the surface
morphology, cathodoluminescence (CL) spectrum and the discharge
characteristics after 500 hours discharge.
PDPp - 4

Adaptive Unsymmetrical Dither Region to Improve
Dynamic False Contour of PDPs
Y.-G. Wang, J.-F. Huang, Z.-H. Liang, X.-N. Zhang
Xi’an Jiaotong Univ., China

Dynamic false contour (DFC) can be improved with less gray scalesin PDPs, the others gray scales are realized by dither. Adaptive
unsymmetrical dither region is computed and changed according to the
DFC. So the dither region can be kept the minimum and PSNR is better
than other methods.
PDPp - 5

Study of Jitter Characteristics Depending on Wall
Charge Status on an Emissive Layer
S. J. Lee, S. M. Kim, J. Kang
Dankook Univ., Korea

We investigated the jitter characteristics depending on wall charge
amount and polarity on different emissive layers, such as MgO andCEL MgO. The accumulation of negative wall charges on pulse-applied
electrode and negative applied voltage were important to decrease theoperation voltage and time delay.
PDPp - 6

Electro-Optical and Exoemission Properties of
Fe-Doped MgO for AC PDPs
S. Y. Cho, J. W. Ok, C. H. Park, D. H. Kim, H. J. Lee,
H. J. Lee
Pusan Nat. Univ., Korea

In this paper, to improve the electro-optical characteristic in AC-PDP,
we suggest the new analysis system to measurement exo-electron
emission directly method and examine a relationship between the exoelectron emission (EEE) and SEE coefﬁcient of Fe-doping MgO ﬁlms or
between characteristics of electro-optical properties of test panel.

88Friday
PDPp - 7

December 3
Improvement of Luminous Efficiency Using New
Reflective Layer in AC PDPs
T.-J. Kweon, J.-C. Ahn, E.-Y. Jung, B.-J. Kim, S.-J. Cho,
H.-S. Jung, Y.-J. Park
Samsung SDI, Korea

In this paper, new reﬂective layer between barrier rib and phosphor
was adopted to increase luminance. New reﬂective layer has thecharacteristics which high reﬂectance and low permittivity. By using thismaterial, the luminous efﬁciency was improved by about 22%.
PDPp - 8

Effect of the Cell Structure on the Luminous
Efficiency of PDPs
H. K. Kwon, M. S. Lee, C. H. Moon
Hoseo Univ., Korea

To investigate the possibility of increasing the luminous efﬁciency of the
PDP, ITO electrode structure and barrier rib structure were changed.
Conclusively, 4.23 lm/W of luminous efﬁciency was obtained in a
proposed structure under 220 V with Ne-20% Xe, 400 torr gas mixture.
PDPp - 9

Effect of Deuterium on the Xe Excitation Efficiency
in PDP
A. Khorami, S. Ghanbari*
IRIB Univ., Iran
*Univ. of Essex, UK

PDPp - 10

Improvement of Luminous Efficiency via
Nanoparticle Phosphors in PDP
A. Khorami, S. Ghanbari*, M. Mofidi**
IRIB Univ., Iran
*Univ. of Essex, UK**Univ. of Azad, Iran

The luminous efﬁciency of plasma display panels can be enhanced
through the type of phosphor and nano sized phosphor. The
photoluminescence characteristics of PbS nanoparticle phosphors
is simulated in order to exhibit the advantages of more excitonsand higher band gap, and results show a 14% improvement on cell
efﬁciency.

89

PDP

Different gas compositions affect the efﬁciency of ultraviolet light. In
this paper, in order to improve luminous efﬁciency of plasma display
panels, a small quantity of Deuterium is added to Ne-Xe gas mixture.
Furthermore, the performance of the SrCaO protective layer is shown
to be signiﬁcant in enhancing cell efﬁciency.

Friday
PDPp - 11L

December 3
Addressing Delay Time vs. Initial Number ofElectrons in AC-PDP
T. Sakai, K. Tachibana*Display Res. Labs., Japan*Ehime Univ., JapanWe analyzed the addressing delay T vs. initial number of electrons n0
with a cell using Ne and MgO. A variation ΔT / T is mainly caused by γ
action. If n0 ≥ 16, T and ΔT is very small and a miss addressing rate ≤10-10. This condition is possible by a ﬁeld emission.
PDPp - 12L

Negative Sustain Waveform for Reducing Temporal
Image Sticking in AC Plasma Display Panel
S.-Y. Kim, C.-S. Park, H.-S. Tae
Kyungpook Nat. Univ., Korea

The temporal image sticking characteristics produced by a negative
sustain waveform were examined in comparison with those produced
by a positive sustain waveform. It was observed that the temporal
image sticking when applying the negative sustain waveform was
reduced in comparison with the positive sustain waveform.
PDPp - 13L

Effects of Overlap Sustain Waveform on PanelAging and Temporal Image Sticking Characteristics
in AC Plasma Display Panel
C.-S. Park, S.-Y. Kim, H.-S. Tae
Kyungpook Nat. Univ., Korea

The panel-aging and the temporal image sticking characteristics were
investigated with the non-overlap and overlap sustain waveforms in the
7-in. test panel. It is concluded that the overlap sustain waveform can
induce the stable discharge very quickly and reduce the problem of
temporal image sticking in plasma displays.
PDPp - 14L

A Study on the Optical Properties of PDP Cells
Using 3D Optical Code
H. Park, J. Kang
Dankook Univ., Korea

The optical properties of PDP were analyzed with 3D optical code. The
reference model shows 16.6% and 10.2% higher reﬂectance than thetest 1 and 2 models respectively. The calculated reﬂective propertiesare compared to the measured data. The relative difference is less than
4.9%.

90

Friday
PDPp - 15L

December 3
Discharge Cell Designs for Large-Sized Transparent
AC PDPs
H.-N. Choi, Y.-S. Kim
Hongik Univ., Korea

A new design of transparent AC PDP for large area information
displays was attempted in this study. The discharge cells with large
fraction of non-discharge area was designed and its potential as thetransparent display was examined. The results indicated that it canachieve optical transmittance while displaying images as well as while
not-displaying images.
----- Lunch ----13:00 - 14:40

Room 412

PDP3: High Efficiency
Chair:
Co-Chair:Y.-S. Kim, Hongik Univ., Korea
Y. Murakami, NHK, Japan

PDP3 - 5L: Invited Application of Localized Surface Plasmon
13:00
Phenomena to an AC Plasma Display Panel
K. C. Choi, S. M. Lee, W. H. Kim
KAIST, Korea
Gold and silver metal nanoparticles are applied to phosphor andprotective layer in an ACPDP in order to induce localized surface
plasmon phenomena. The localized surface plasmon resonanceinduces a very strong localized electric ﬁeld. It is believed that thestrong localized ﬁeld affects the display characteristics of the ACPDP.

PDP

PDP3 - 1:
13:20

Invited PDP Research and Development in China
Q. YanShichuan COC Display Devices, China

Low cost, high luminous efﬁciency PDP, low power consumption, highimage quality are key factors to have a sustainable PDP business in
China. Newly established PDP consortium in China is working closelywith PDP manufacture to solve those challenges. The future directionof PDP development will be discussed.
PDP3 - 2

Withdrawn

91

Friday
PDP3 - 6L
13:40

December 3
Improvement of Excitation Efficiency by a LocalizedHigh Capacitance Region in Micro-Discharge Celland Its Mechanism
M. Konishi, M. Miura, M. Murata, R. Murai, M. Kitagawa
Panasonic, Japan

We performed an experimental and simulation study on the relation
between the distribution of capacitance in micro discharge celland excitation efﬁciency for AC PDP. Introduction of localized highcapacitance region in front dielectric layer near barrier rib is found to beeffective for the improvement of the excitation efﬁciency.
PDP3 - 3
14:00

Efficacy Improvement of PDP Discharge Using
Energy Stored in Panel CapacitanceY. Tanaka, T. Shiga
Univ. of Electro-Commun., Japan

Sustain voltage waveform using high impedance is introduced to
improve the luminous efﬁcacy of PDPs. When the discharge is ignited,
the panel capacitance voltage drops during the high impedance period,
resulting in low and narrow discharge current. Efﬁcacy increases by
60% and luminance is almost identical to the conventional technique.
PDP3 - 4
14:20

Development of Degradation Resistant Red, Greenand Blue Silica Encapsulated Phosphors for PDPs
R. S. Yadav, A. F. Khan, A. Yadav, H. Chander,
V. Shanker, S. Chawla
Nat. Physical Lab., India

PDPs
performanceisgreatlydependentonphosphors.
Towards this goal, highly efﬁcient phosphors Y4Al2O9:Eu3+ (Red),BaMgAl10O17:Eu2+(Blue) and YBO3:Tb3+ (green) have been developed.
Degradation resistance, enhancement in luminescence intensity by 3035% and uniform particle size distribution (1-2 µm) could be achieved byencapsulating the phosphor grains by a thin silica layer.
----- Break ----15:00 - 16:20

Room 412

PDP4: Protective Layer
Chair:
Co-Chair:

92

Q. Yan, Shichuan COC Display Devices, China
H. Kajiyama, Hiroshima Univ., Japan, Korea

Friday
PDP4 - 1:
15:00

December 3
Invited Investigation of Panel Design Parameters for
Low Power Consumption PDPs
H.-B. Park, J.-H. Kim, W.-S. Yoon, Y.-S. Seo, S.-B. Song,
W.-J. Chung, E.-G. Heo, Y.-J. Park, C.-I. Chung
Samsung SDI, Korea

To reduce the power consumption of PDP, a panel should be carefully
designed for high luminous efﬁciency and low reactive power
consumption. Effects of barrier rib structure, dielectric layer property,
and gas mixture on efﬁcacy and especially on reactive power are
investigated.
PDP4 - 2
15:20

Discharge Characteristics of SrCaO-PDP with
MgO:a Powder Manufactured by Using All-inVacuum Process
T. Yano*,**, K. Uchida*, K. Suesada**, S. Miyamoto**,T. Shinoda**, H. Kajiyama***ULVAC, Japan**Hiroshima Univ., JapanThe SrCaO-PDP with MgO:a powder are manufactured by using the
all-in-vacuum process. By coating MgO:a powder on SrCaO protective
layer surface in vacuum, it is possible to keep low discharge voltage
of SrCaO protective layer and to shorten the discharge time lag within
about 1 µs.
PDP4 - 3
15:40

Discharge Diagnosis of High-g PDPs with Various Xe
Contents
D. Zhu*,**, T. Izumi***, T. Akiyama***, K. Suesada*,
S. Miyamoto*, X. Zhang**, H. Kajiyama*

PDP*Hiroshima Univ., Japan**Southeast Univ., China***APDC, JapanThe 4-in. test plasma display panels which have high γ protective layer
SrCaO have been investigated by experiments. The xenon content
in the discharge gas ranges from 4% to 80%, respectively. The panel
parameters that have been measured include ﬁring voltage, luminance,
efﬁcacy, infra-red emission, etc.
PDP4 - 4
16:00

Analysis of Discharge Characteristics for High
Luminous Efficacy with High g Protective Layer
T. Izumi, T. Akiyama, S. Uchida*, M. Kitagawa
APDC, Japan*Tokyo Metropolitan Univ., Japan

VUV production efﬁciencies were simulated by a one-dimensional
ﬂuid discharge model. By examining the electron and ion densities, it
has been revealed that an increase in the electron heating efﬁciency
originated from the high g characteristics played a major contribution to
the improvement of the VUV production efﬁciency.

93Friday

December 3

Author Interviews
16:20 – 17:20

Sponsor:Plasma Display Technical Meeting

IDW Outstanding
Poster Paper Award
This award will go to the most outstanding paper
selected from those presented at IDW ’10
poster presentation.
The 2010 award winners will be announced on the
IDW website: http://www.idw.ne.jp/award.html

BANQUET
Wednesday, December 1, 2010
19:30 – 21:30
Crowne Grand Ball Room (2F)ANA Crowne Plaza Fukuoka
See page 9 for details

EXHIBITION
12:00 – 18:00 Wednesday, Dec. 1, 2010
10:00 – 18:00 Thursday, Dec. 2, 2010
10:00 – 14:00 Friday, Dec. 3, 2010
2F Lobby, 4F Lobby
Fukuoka International Congress CenterFree admission with your registration name tag
94

Wednesday

December 1

Workshop on
EL Displays and Phosphors
Wednesday, December 1
15:00 -16:40

Room 413

PH1: Phosphors in General
Chair:
Co-Chair:T. -M. Chen, Nat. Chaio Tung Univ., Taiwan
S. Okamoto, NHK, Japan

PH1 - 1:
15:00

Invited The Luminescence of Divalent Europium(Eu2+) for Display Applications
A. M. Srivastava
GE Global Res., USA

The Eu2+ luminescence ﬁnds use in several lighting and display
devices. This paper explores several aspects of Eu2+ luminescence andpoint to the need of fundamental studies that are needed to resolveinterpretations of the experimental data. Such investigations can leadto the development of commercially important phosphors.
PH1 - 2:
15:30

Invited R&D for Reducing Tb and Eu Usage inPhosphors for Fluorescent Lamp for Sustainable
Development
T. Akai
AIST, JapanThe future, there may be an imbalanced supply and demand of Tb andEu, which are used in ﬂuorescent lamps. An outline of an R&D project
to reduce the usage of Tb and Eu is presented with a review of theirdemand and supply.
PH1 - 3
16:00

H. Onuma, I. Yamashita, R. Nagumo, R. Miura,
A. Suzuki, H. Tsuboi, N. Hatakeyama, A. Endou,
H. Takaba, M. Kubo, A. Miyamoto
Tohoku Univ., Japan
In this paper, we reported a computational study on emission propertyof Eu2+-doped phosphors. Multi-regression analyses were carried out
and prediction equations for emission/excitation wavelength of Eu2+doped phosphors were obtained. We found that Ca/Sr/Ba and Si/O/S
atoms around Eu atoms make emission/excitation wavelength long andshort, respectively.

95

PH

A Computational Chemistry Study on Relationshipbetween Crystal Structure and Emission Property of
Eu2+-Doped PhosphorsWed./Thu.

December 1/2

PH1 - 4
16:20

The Improvement in Photoluminescence Property of
CaYAlO4:Eu3+ Phosphor by the Post-Annealing
Process
M. Bartic, H. Kominami, Y. Nakanishi, K. Hara
Shizuoka Univ., Japan

This paper describes the synthesis and characterization of the novel
CaYAlO4:Eu3+ phosphor, which emits red photoluminescence (PL) withthe main emission peak located at 611.5 nm under a VUV irradiation
at room temperature. The experimental data showed that the postannealing process has improved signiﬁcantly the PL property of thisphosphor.
----- Break -----

Author Interviews
18:00 – 19:00

Thursday, December 2
9:00 - 10:10

Room 413

PH2: Phosphors for LEDs
Chair:
Co-Chair:A. M. Srivastava, GE Global Res., USA
S. Oshio, Panasonic, JapanPH2 - 1:
9:00

Invited Synthesis and Luminescence Properties ofLanthanide Ion-Doped Nitride Phosphors
K. Machida
Osaka Univ., Japan

Novel techniques were applied to synthesize nitride phosphors forwhite LED illumination. Without using alkaline earth metal nitrides,
M2Si5N8:Eu2+ (M=Ca, Sr, and Ba) are produced by nitriding thecorresponding oxides with carbonaceous reductants. Meanwhile, direct
nitriding of the component metals or hydrides such as M, Si, and/or
Al are effective to produce Ba2Si5N8:Eu2+ and CaAlSiN3:Eu2+ as highquality phosphors.
PH2 - 2
9:30

Eu2+-Doped AlN-SiC Solid Solutions: Synthesis,
Cathodoluminescence and Potential Applications
R.-J. Xie, N. Hirosaki, B. Dierre, T. Takeda, T. Sekiguchi
NIMS, Japan

Eu2+-doped AlN-SiC phosphors were prepared by ﬁring the powder
mixture at 2050oC for 2 h under 1 MPa N2. A solid solution between
AlN and SiC was formed, promoting the solution of Eu2+ in AlN. The
phosphors showed intense blue emissions under electron beam
excitation, indicative of potential phosphors for FEDs.

96

Thursday
PH2 - 3
9:50

December 2
A New Synthesis Route for Nitride Phosphors:
Sr2Si5N8:Eu2+ Orange Red-Emitting Phosphors
Synthesized at Relatively Low Temperature for LED
Application
A. Kirakosyan, D. Y. Jeon
KAIST, Korea

2+

Eu activated Sr2Si5N8 nitridosilicate phosphors was prepared bya new synthesis method allowed to synthesize it at relatively low
temperature and atmospheric pressure of nitrogen. The method has
several advantages compared to commonly used processes andshows high reaction yield. The phosphor synthesized might be used in
WLED application.
----- Break ----13:20 - 16:20

Poster/A.I. Room

Poster PHp: Phosphors
PHp - 1

Structural and Luminescent Properties of Y6+x/3
Si11-yAlyN20+x-yO1-x+y:Ce3+ Phosphors
W. B. Park, S. P. Singh, K.-S. Sohn
Sunchon Nat. Univ., Korea

A two-step high throughput screening was implemented in YN-AlNSiN4/3 ternary system based on random choices. We pinpointed a hoststructure Y6+x/3Si11-yAlyN20+x-yO1-x+y (x= 0~3, y=0~3), the reﬁned structureof which was the trigonal (P31c) with lattice parameters a = b =9.81513 Å, c = 10.6305 Å, α = b = 90 , g = 120 .
PHp - 2Luminescence Properties of Eu2+-doped b-SiAlON
Phosphors Synthesized by Spark Plasma Sintering
S.-W. Choi, S.-H. Hong
Seoul Nat. Univ., Korea

97

PH

EuxSi6-zAlzOzN8-z phosphors were successfully prepared by spark
plasma sintering (SPS). The obtained b-SiAlON:Eu2+ phosphor was
excited over a broad spectral range in a UV-visible region, and showed
a green emission band centered at 535 nm. The Eu2+-doped b-SiAlON
phosphor showed superior thermal stability (25 C-200 C) compared tocommercial green phosphor.

Thursday
PHp - 3

December 2
Luminescence Properties of Ca2Si5N8:Eu2+
Synthesized by Spark Plasma Sintering
Y.-S. Kim, S.-W. Choi, S.-H. Hong
Seoul Nat. Univ., Korea

2+

Eu -doped Ca2Si5N8 phosphors were synthesized by Spark Plasma
Sintering. The emission spectra of Ca2Si5N8:Eu2+ exhibited a single
broad band centered at 600 nm under the excitation of 460nm. The
inﬂuence of the synthesis temperature and the doping concentrationon the crystalline phase and luminescence properties had beencharacterized.
PHp - 4

Photoluminescence Behavior of MgAlSiN3:Eu2+
Phosphors
B. Y. Han, K.-S. Sohn
Sunchon Nat. Univ., Korea

The effect of Eu2+ concentration in MgAlSiN3:Eu2+ Phosphors is studied.
MgAlSiN3:Eu2+ Phosphors with low Eu2+ concentration emits red lightand is suitable for white light emitting diodes, however, higher Eu2+
concentration emit deep red light around 710 nm is useful for energy
down converting material for use in crystalline Silicon cells.
PHp - 5The Effect of Al Inclusion on the Photoluminescenceof LaSi3N5:Ce3+ Phosphors
J. W. Park, S. P. Singh, K.-S. Sohn
Sunchon Nat. Univ., Korea

Blue emitting LaSi3N5:Ce3+ phosphor has been modiﬁed by Al
substitution to enhance the color rendering index of white light emitting
diodes (WLED) by shifting the excitation band towards desirable
wavelength region. The crystal structure remains unaltered with Al
substitution and orthorhombic structure in the P212121 space group ismaintained.
PHp - 6

Photoluminescence Properties of CaTiO3:Bi
T. Kyomen, K. Hirozumi, M. Hanaya
Gunma Univ., Japan

CaTiO3:Bi phosphor showed yellowish white photoluminescenceby irradiation of light in the wavelength range of 400-300 nm. It wassuggested that the photoluminescence is occurred by not only s-ptransition excitation of Bi3+ but also band-gap excitation of CaTiO3 andsuccessive energy transfer to Bi3+.

98

Thursday
PHp - 7

December 2Growth of Silicate Phosphors from the Vapor Phase
T. Ishigaki, K. Toda, T. Sakamoto, K. Umeatsu, M. Sato
Niigata Univ., Japan

Well-crystalline Ba2SiO4:Eu2+ powders were grown on a substrateby new vapor phase reaction between mixed powder and SiO gas.
The emission intensity of the Ba2SiO4:Eu2+ phosphor synthesized by
new vapor phase technique is about 2.6 times higher than that of aconventional solid state reaction sample.
PHp - 8Study on Intermediate State of YAG:Ce Prepared by
Coprecipitation Method
T. Murakawa*, H. Okura*,**, T. Honma***, Y. Miyamoto*,
K. Ohmi**Tottori Univ., Japan**Merck, Japan***Japan Synchrotron Radiation Res. Inst., Japan

Intermediate states of Y3Al5O12:Ce prepared by liquid phase reaction
has been studied. Relationships between precursors, intermediate
products and completed phosphors are systematically investigated byanalyzing the valence and local structure around Ce. It has been foundthat most of Ce is segregated as amorphous tetravalent cerium oxideby oxidized ﬁre.
PHp - 9Optical Properties of Sr1.9Ba0.1SiO4 : Eu2+ Thin Film
Phosphors According to Thickness
J. H. Moon, K. N. Lee, Y. R. Do
Kookmin Univ., Korea

This study investigates yellow emitting Eu2+ doped Sr1.9Ba0.1SiO4 Thin
Film Phosphors (TFPs). Sr1.9Ba0.1SiO4:Eu2+ TFPs were deposited
on a 2x2 cm2 quartz substrate using electron beam evaporation. The
brightness and luminescence efﬁciency of the thin ﬁlms improved as
the deposition temperature and thickness of the Sr1.9Ba0.1SiO4:Eu2+
TFPs were increased.
Structural and Cathodoluminescent Properties of
ZnAl2O4 Phosphor for UV Emission

PH

PHp - 10

T. Iguchi, H. Kominami, Y. Nakanishi, K. Hara,
A. Ohnishi*, M. Kitaura*
Shizuoka Univ., Japan*Yamagata Univ., Japan
ZnAl2O4 which shows UV emission under the EB excitation has been
investigated for the UV emitting devices. The luminescent properties
were drastically changed by the synthesis temperature and Zn/Al ratio.
From PLE and CL measurement, it is thought that the UV emission iscaused from oxygen vacancy.

99

Thursday
PHp - 11

December 2
Valence Estimation of Eu Luminescent Centers of
BAM Phosphors by Conversion Electron Yield andFluorescence Yield XAFS Measurements
T. Honma, T. Kunimoto*, T. Koshiba**, Y. Yamashita**,
K. Ohmi**Japan Synchrotron Radiation Res. Inst., Japan*Tokushima Bunri Univ., Japan**Tottori Univ., Japan

Conversion electron yield (CEY)- and X-ray ﬂuorescence yield (XFY)XAFS measurements have been performed for Eu luminescent centers
in BAM phosphors baked in various conditions. The valence statesof Eu ions near the surface and the internal bulk of BAM crystal areevaluated from Eu-L3 edge CEY- and XFY-XANES spectra, respectively.
PHp - 12Synthesis and Characterization of Lithium
Aluminate Red Phosphor
K. Inoue, T. Sago, Y. Amano*, Y. Iwamoto*Mie Ind. Res. Inst., Japan*Nagoya Inst. of Tech., JapanThe sol-gel-derived lithium aluminate composition with Li:Al=1:1
yielded α-LiAlO2 at 600˚C. Then α/γ phase transformation at 800 to
1200˚C, and subsequent decomposition lead to the formation of LiAl5O8
above 1200˚C. At 1600˚C, the red emission band is observed with the
maximum around 685 nm.
PHp - 13Synthesis of Ce3+-Tb3+ Co-activated Phosphate
Phosphor in Air Condition
N. Sato, K. Uematsu, T. Ishigaki, K. Toda, M. Sato
Niigata Univ., Japan

b-SrP2O6:Ce3+, Tb3+ phosphor was synthesized by solid state reaction
in air condition. Ce and Tb could be easily reduced without reduction
gases. The phosphor emit strong green light under UV excitation.
Therefore, b-SrP2O6:Ce3+, Tb3+ can be expected as a green phosphor
for the CCFL backlight.
PHp - 14Synthesis of Eu3+ Doped Novel Borotungstate andBorosilicate Phosphors for White LEDs
M. Inoue, S. Seki, K. Uematsu, T. Ishigaki, K. Toda,
M. SatoNiigata Univ., Japan

Eu3BWO9 and Gd3BSi2O10:Eu3+ as novel red emission phosphors wereprepared by solid-state reaction. These phosphors have the main
excitation band located at 395 nm, and dominated emission peak at
588 nm and 614 nm. Eu3BWO9 and Gd3BSi2O10:Eu3+ were suitable forthe tri-color phosphors based white LED.

100

Thursday
PHp - 15

December 2
Effect of Organic Dye in Inorganic-Organic HybridElectroluminescence Devices
Y. Noguchi, Y. Hoshino, T. Tamura, T. Uchida, T. SatohTokyo Polytechnic Univ., Japan

By using organic dyes to dope the phosphor layers of powder EL
devices, high luminosity and uniform luminescence can be realized. In
hybrid EL device, the excitation energy of the phosphor is transferredto the organic dyes. The introduction of the organic dye results inincreased luminosity and uniform brightness.
PHp - 16

Current-Voltage Characteristics of Top-Emission
Printed EL Devices Using Solution-Processed ZnO
Nanocrystals
H. Kawasaki, K. Itatani, T. Toyama, H. Okamoto
Osaka Univ., Japan

Current–voltage (J–V) measurements were performed on the topemission EL devices with a printed emission layer involving solutionprocessed ZnO nanocrystals. The temperature dependence of J–V
characteristics suggested the deposition method and the deposition
conditions of top anodes play a crucial role in determining UV emission
intensity.
PHp - 17

Inorganic Electoluminescent Devices with Carbon
Nano Tube
K.-M. Yu*, H.-S. Song*, H.-K. Yi*, H.-S. Choi*, H.-R. Oh*,
H.-J. Moon**, D.-S. Moon***, B. S. Bae*,***Univ. of New IT Eng., Korea**Univ. of Semiconductor, Korea***CCO Display Tech., Korea

The EL devices were investigated with CNT. We investigated ELwith a phosphor paste mixed with CNT by impeller and ball mill.
The luminance of EL devices depends on how to mix the CNT. We
investigated EL devices according to amount of CNT, and the positionof the CNT layer.
Preparation of Rare-Earth Doped SrGa2S4 Thin Film
Phosphors by Two Electron Beams Evaporation and355 nm Laser-Annealing
T. Yamasaki, T. Seino*, H. Kominami, Y. Nakanishi,
Y. Hatanaka**, K. Hara
Shizuoka Univ., Japan*Japan Steel Works, Japan**Aichi Univ. of Tech., JapanThe crystallization mechanism of SrGa2S4:Eu2+ thin-ﬁlm phosphorsby 355nm laser-annealing was examined. From simulation of thermal
distribution by laser irradiation on SrS and Ga2S3 ﬁlms, the laser energy
was mainly absorbed by Ga2S3 and heated. It was expected that laser
energy absorption in Ga2S3 contributed to formation of SrGa2S4 greatly.

101

PH

PHp - 18

Thursday
PHp - 19

December 2
Thin-Film Electroluminescent Devices FabricatedUsing La2O3-Based Multi-Component Oxide
Phosphors
J. Ishino, Y. Nishi, T. Miyata, T. Minami
Kanazawa Inst. of Tech., Japan

Multicolor PL and EL emissions were observed from newly developed
La2O3-based oxide phosphors using BaLa2O4, CaLa2O4 or SrLa2O4 as
the host material. The use of Bi-activated oxide phosphors co-dopedwith Eu made it possible to control the EL and PL emission color over awide range.
PHp - 20

EL and PL Characteristics in Various Bi-Activated
Vanadate-Based Phosphor Thin Films
J. Ishino, T. Miyata, T. Minami
Kanazawa Inst. of Tech., Japan

Multicolor PL and EL emissions were obtained in Bi-activated YVO4
and GdVO4 as well as YVO4:Bi,Eu, GdVO4:Bi,Eu and LaVO4:Bi,Eu
phosphor thin ﬁlms. Color changes from green to red in PL and EL
emissions were obtained. A maximum luminance of 24 cd/m2 was
obtained in a red-emitting GdVO4:Bi, Eu TFEL device.
PHp - 21

Influence of Organic Solvent on Optical Degradation
Characteristics of Sol-Gel Glass Coated EuComplex
T. Fukuda, S. Akiyama , S. Kato , Z. Honda , N. Kamata,N. Kijima*
Saitama Univ., Japan*Mitsubishi Chem. Group, Sci. Tech. Res. Ctr., Japan

We investigated the inﬂuence of organic solvent on the opticaldegradation of Eu-complex encapsulated by sol-gel derived glass
networks. The most important ﬁnding is that the dielectric constant of
the organic solvent affects the optical degradation characteristics of theencapsulated sample and PL quantum efﬁciency of the sol-gel starting
solution.
PHp - 22

Improved Stability of Glass-Coated Eu-Complex
Using Solvothermal Synthesis
S. Kato, S. Akiyama, T. Fukuda, Z. Honda, N. Kamata,N. Kijima*
Saitama Univ., Japan*Mitsubishi Chem. Group, Sci. Tech. Res. Ctr., Japan

We achieved an improved optical degradation characteristic of Eucomplex encapsulated by the silica glass network via a solvothermal
synthesis. By optimizing the concentration of the organic solvent, amaximum half brightness time of more than 360 min was achieved, andit was 5.4-times longer than that of the reference sample.

102

Thursday
PHp - 23

December 2
Fabrication of a Transparent Thin Film Using
Y3Al5O12:Ce3+ Nanophosphor with a Poly (methyl
methacrylate) Matrix
B. K. Park, J. H. Oh, Y. R. Do
Kookmin Univ., Korea

Y3Al5O12:Ce3+ (YAG:Ce3+) nanophosphor was synthesized by aglycothermal method,where a reaction between aluminum isopropoxide
and acetates of yttrium and cerium(III) was induced in 1,4-butylene
glycol in an autoclave. A PMMA matrix transparent thin ﬁlm dispersed
YAG:Ce3+ nanophosphor was fabricated on glass substrates by a spincoating method.
PHp - 24

Enhanced Photoluminescence of Transparent
Polymer Films Dispersed Fluorescent Dye with
Light-Recycling Filters
H. K. Park, J. R. Oh, Y. R. Do
Kookmin Univ., Korea

We exploit the effects of light-recycling ﬁlters (LRFs) to enhance
the photoluminescence of transparent polymer ﬁlms incorporating
dispersed ﬂuorescent dye. Fluorescent dye (Lumogen yellow)
was dispersed in a transparent polymer consisting of polymethyl
methacrylate (PMMA) and toluene. Transparent ﬁlms were spin-coatedon glass substrates with and without LRFs, respectively.
PHp - 25

Preparation of Perovskite-Type Alkaline-Earth
Stannates Thin Films Using a Unilamellar
Nanosheets Seed Layer
H. Takashima, K. Ueda*, K. Ikegami
AIST, Japan*KIT, Japan

PHp - 26

A Novel Synthesis of Spherical Silica Phosphors
W. Pan, N. Wang, Y. Wu, G. Li, J. Li, G. Ning, Z. Mu*,
Y. Lin*Dalian Univ. of Tech., China*Liaoning Zhongda Superconducting Material, China

The novelty of the current work lies in the simple synthesis of a classof silica phosphors produced upon calcination of hybrid-functionalized
silica spheres which to the best of our knowledge are the ﬁrst known
the role of en on the morphology and luminescence properties of theresultant silica spheres.

103

PH

We have obtained green photoluminescence in rare-earth-doped
perovskite-type alkaline-earth stannate thin ﬁlms. On a glass substratewith a seed layer prepared by the Langmuir-Blodgett method, uniaxiallyoriented thin ﬁlms of [(Ca0.97Mg0.03)0.98Tb0.02]SnO3 with sharp and intenseemission and transmittance > 75% have been successfully obtained.

Thursday
PHp - 27

December 2High Throughput Synthesis "Melt-Synthesis
Technique" for Photoluminescence Materials Using
by Arc Imaging Furnace
T. Ishigaki, K. Uematsu, K. Toda, M. Sato, M. Yoshimura*
Niigata Univ., Japan*Tokyo Inst. of Tech., JapanTo synthesize photoluminescence materials, we applied a novel “meltsynthesis technique”. Rapid synthesis methods to develop those
double oxides have been strongly anticipated. During melt synthesis,
the mixture of oxides or their precursors is melted rapidly (1–60 s) in an
arc-imaging furnace using strong light radiation.
PHp - 28L

Computational Screening of Host Crystal for
Phosphors: Correlation of Eu2+ Emission
Wavelength with Stoichiometry
H. Onuma, D. Yoshihara, I. Yamashita, R. Nagumo,
R. Miura, A. Suzuki, H. Tsuboi, N. Hatakeyama, A.
Endou, H. Takaba, M. Kubo, A. Miyamoto
Tohoku Univ., Japan

We reported a decision tree analysis to explore a host material of Eu2+doped phosphors focusing on their emission wavelength. The emission
wavelengths of investigated phosphors correlated well with a simple
function of their stoichiometry. Our proposed rule would be useful for aﬁrst screening of host materials for Eu2+-doped phosphors.
PHp - 29L

Crystallographic and Luminescent Characteristics
of CuAlS2:Mn Phosphor Thin Films Prepared byMulti Source Deposition Using Al2S3:Mn and Cu
Evaporation Sources
T. Koshiba, Y. Miyamoto, K. Ohmi
Tottori Univ., Japan

CuAlS2:Mn phosphor thin ﬁlms have been prepared by multisource deposition method using Al2S3:Mn and Cu as electron-beam
evaporation sources. The prepared ﬁlms are crystallized as CuAlS2 byannealing at 650˚C, and are singly oriented to the <112> axis. The ﬁlms
show an efﬁcient reddish-orange photoluminescence under UV lightirradiation.

104

Thursday
PHp - 30L

December 2
Eu, Mn Coactivated Calcium Silicate Phosphors for
Near-UV Excitation Synthesized by Microreaction
MethodH. Okura*,**, T. Murakawa**, Y. Miyamoto**, K. Ohmi***Merck, Japan**Tottori Univ., Japan

Novel orange phosphors (Ca1-x-y,Eux,Mny)SiO3.(SiO2)n have beendeveloped by combinatorial synthesis, which is an effective method forsearching for new phosphors. Synthesized phosphors have acicularparticles and show an orange luminescence with a peak wavelength at
600 nm under near-UV excitation. The phosphors are suitable for highcolor rendering white LEDs.
PHp - 31L

Surface Modification of the LED phosphor by
Al2O3-coating and NaOH Treatment
J. H. Seo, S. H. Sohn
Kyungpook Nat. Univ., Korea

The surface of Eu doped silicate phosphor was coated with Al2O3nanoparticles in a simple surface treatment way, a kind of the modiﬁed
sol-gel method. Surface modiﬁcation was caused by NaOH-trearment.
It was found that the surface coating and the NaOH-treatment do notaffect to the luminance intensity of the phosphors.
PHp - 32L

The Nitridation of Europium Doped Strontium
Silicate Phosphors
S. J. Lee, J. S. Lee, W. H. Jung*, K. Lee, Y. J. Kim
Kyonggi Univ., Korea*Cerakor, Korea

Eu2+ doped Sr2SiO4 powders were nitrided and then the structural andoptical properties were investigated. The nitridation was performedby ﬁring the mixture of SrCO3-Si3N4-Eu2O3 under N2 atmosphere.
The emission wavelength ranged from green to red under 466 nm
excitation, depending on the ﬁring parameters.
Broad Band-SrSi2O2N2: Eu2+ Phosphor for SolidState Lighting and Photovoltaic CellPH

PHp - 33L

Y.-C. Fang*, S.-Y. Chu*,**Nat. Cheng Kung Univ., Taiwan
2+

SrSi2O2N2: Eu green phosphors are prepared using a solid-state
reaction. The luminescence properties are investigated using PLE/
PL spectra, and this concentration quenching mechanism may beexchange interaction. Results show that SrSi2O2N2: Eu2+ phosphorswith a broad excitation band have potential for use in solid-state lighting
and solar cells.
----- Break -----

105

Thursday

December 2

16:40 - 17:50

Room 502

PH3: Emissive Displays and Phosphors
Chair:
Co-Chair:

D. Jeon, KAIST, Korea
K. Wani, Tazmo, Japan

PH3 - 1:
16:40

Invited Challenges to Full-Color Quantum Dot
Display
B. L. Choi, T.-H. Kim, K.-S. Cho, E. K. Lee, S. J. Lee,
J. Chae*, J. W. Kim, D. H. Kim, S. Y. Lee, Y. Kuk*,
J. M. Kim
Samsung Elect., Korea*Seoul Nat. Univ., Korea

Colloidal quantum-dot (QD) display has recently received considerable
attention due to their many strengths of QD property. In this talk, thestatus of QD-EL and the embodiment of full-color QD display with anoble, scalable approach for ﬁne patterning of QD will be presented.
PH3 - 2
17:10

Optical Simulation of Light Conversion Process in
Emissive LCDs Consisting of Phosphor Layers andNear-UV LEDs
T. Yata*,**, Y. Miyamoto*, K. Ohmi**Tottori Univ., Japan**Sony Mobile Display, JapanA light conversion process in emissive LCDs consisting of phosphor
layers and near-UV light has been simulated using a Monte Calro ray
tracing method. It enables to optimize parameters of phosphor layer
by only using measured luminescent and optical characteristics ofphosphors and optical ﬁlters.
PH3 - 3
17:30

Effect of Annealing on the Structural andPhotoluminescence Properties of ZnO/Zn0.9Mg0.1O
Heterostructures
C. Li, D. Wang, T. Kawaharamura, T. Matsuda,
T. Hiramatsu, H. Furuta, M. Furuta, T. Hirao
Kochi Univ. of Tech., Japan

ZnO/Zn0.9Mg0.1O thin ﬁlms were prepared by radio frequency
magnetron sputtering. Thermal-annealing was carried out in different
ambient gases at a low temperature of 430 C. Bamboo-like nano-rods
were only formed after annealing in a reducing gas, accompanying withan enhancement in both visible and UV region emissions.

106

Thursday

December 2

Author Interviews
18:00 – 19:00

Supporting Organizations:
The 125th Research Committee on Mutual Conversion between
Light and Electricity, Japan Society for Promotion of Science
Phosphor Research Society, The Electrochemical Society of Japan

IDW ’11
The 18th International Display Workshops
December 7-9, 2011
Nagoya Congress Center
Nagoya, Japan
http://www.idw.ne.jp

IDW Best Paper AwardIDW Outstanding
Poster Paper Award
This award will go to the most outstanding paper
selected from those presented at IDW ’10
poster presentation.
The 2010 award winners will be announced on the
IDW website: http://www.idw.ne.jp/award.html
107PHThis award will go to the most outstanding paper
selected from those presented at IDW ’10.
The 2010 award winners will be announced on the
IDW website: http://www.idw.ne.jp/award.html

Friday

December 3

Workshop on
Field Emission Display and CRT
Friday, December 3
9:00 - 9:10

Room 402

Opening
Opening Remarks
9:00
M. Takai, Osaka Univ., Japan
9:10 - 10:00

Room 402

FED1: FEDs & BLUs
Chair:
Co-Chair:H. Mimura, Shizuoka Univ., Japan
H. Shimawaki, Hachinohe Inst. of Tech., Japan

FED1 - 1:
9:10

Invited Development of Carbon Nanotube Backlightfor LC Television; Reliability of Printed Carbon
Nanotube Field Emitters
Y. C. Kim, I. H. Kim, J. N. Hur, J. W. Bae, S. H. Park,
H. J. Kim, I. T. Han, J. M. Kim, Y. H. Kim
Samsung Advanced Inst. of Tech., Korea

LCD TV lit by CNT BLU has been developed. We present development
and optimization on the CNT paste for the application in BLU. Emission
current density ~ 1 mA/cm2 under DC bias was stably obtained throughthe CNT paste with high concentration of CNTs up to 10 wt%.
FED1 - 2
9:40

High Speed Lightening of CNT Field Emission
Backlight for LCD by Enhanced Turn-off Current
Driving Method
J.-W. Jeong*, J.-W. Kim*,**, J.-T. Kang*,***, Y.-H. Song*,***Elect. & Telecommun. Res. Inst., Korea**Univ. of Sci. & Tech., Korea***Kyungpook Nat. Univ., Korea

The advanced current driving method was adopted for a high speed
operation of CNT ﬁeld emission backlight. The enhanced turn-off
method shortens the response time of ﬁeld emission switching in the
FE-BLU, under 1ms, which is applicable to an impulsive or a colorsequential BLU for premium LCD.
FED1 - 3

Withdrawn----- Break -----

108

Friday

December 3

10:40 - 12:10

Room 402

FED2: Field Emitters (1)Y. Gotoh , Kyoto Univ., JapanF. Wakaya, Osaka Univ., Japan

FED2 - 1:
10:40

Invited Field Emission Characteristics of Carbon
Nanotube Emitters Fabricated by a FiltrationTransfer Method
D. H. Shin, Y. Song, Y. Sun, J. Y. Lee, J. H. Shin, C. J. Lee
Korea Univ., Korea

We demonstrated CNT ﬁeld emitters made by a ﬁltration-transfer
method. They showed low turn-on and threshold electric ﬁelds andvery stable emission stability for long operation time at the acceleration
condition. The new fabrication method can promise high-performance
CNT emitters with organic binder free at room temperature.
FED2 - 2
11:10

Robust Carbon Nanotube Cathode with Various CNT
Diameters and Post Treatments
M. Takai, T. Takikawa, H. Oki, K. Murakami, S. Abo,
F. Wakaya
Osaka Univ., Japan

Carbon nanotube (CNT) cathodes with high emission current andlong lifetime have been realized using various surface treatments andpulsed aging, resulting in the ﬁeld emission lifetimes exceeded 100
hours in dc operation, corresponding to 100,000 hours at a duty ratio of
1/1000.
FED2 - 3
11:30

Performance of Hafnium Nitride Field Emitter Arrayin Tough CircumstanceW. Ohue, K. Ikeda, K. Endo, Y. Gotoh, H. Tsuji
Kyoto Univ., Japan

Gated Hafnium Nitride ﬁeld emitter arrays (HfN-FEAs) which posses
approximately 10,000 emission tips were fabricated, and theirperformance was evaluated both at room temperature and at 200 C.
HfN-FEAs could be operated even at 200 C.

109

FED

Chair:
Co-Chair:Friday
FED2 - 4
11:50

December 3
Enhanced Electron Emission from nc-Si MOS
Cathode by Laser Irradiation
H. Shimawaki, Y. Neo*, H. Mimura*, F. Wakaya**,
M. Takai**
Hachinohe Inst. of Tech., Japan*Shizuoka Univ., Japan**Osaka Univ., Japan

Enhancement of electron emission by laser irradiation of a metaloxide-semiconductor (MOS)-type cathode based on nanocrystalline
silicon has been studied. The emission current was enhanced underirradiation and quickly responded to on-off of the laser. In addition, thethreshold voltage for the electron emission became lower than thatwithout irradiation.
----- Lunch ----13:20 - 14:40

Room 402

FED3: Field Emitters (2)Chair:
Co-Chair:M. Takai, Osaka Univ., Japan
Y. Neo, Shizuoka Univ., Japan

FED3 - 1
13:20

FEA Technologies for Display and Imaging Sensor
Application
M. Nagao, T. Yoshida, T. Shimizu, S. Kanemaru, Y. Neo*,
H. Mimura*
AIST, Japan*Shizuoka Univ., Japan

Several FEA technologies for display and imaging device applicationthat we have developed will be overviewed. A vertical-thin-ﬁlm FEA formaterial saving fabrication, an integration of FEAs on TFT substrate for
precise emission control, a volcano-structured multi-gate FEA for beamfocusing, and HfC coating for lifetime improvement will be presented.
FED3 - 2
13:40

Observation of Field Emission Current Fluctuation
with In Situ Analyzer of Field Emission Devices
Y. Gotoh, M. Kawasaki, H. Tsuji
Kyoto Univ., Japan

Current ﬂuctuation of ﬁeld emission current was observed with in situ
analyzer of ﬁeld emitters. Current-voltage characteristics obtained bysuperimposing ac voltage, we obtained Seppen-Katamuki plots of theemitter. Detailed analysis revealed that the change in emission current
could be detected by the present method.

110Friday
FED3 - 3
14:00

December 3
Enhancement of Electron Field Emission from
Titanium-Oxide Nanostructure by Ultraviolet Light
Irradiation
F. Wakaya, T. Tatsumi, K. Murakami, S. Abo, T. Takimoto*,
Y. Takaoka*, M. Takai
Osaka Univ., Japan*Ishihara Sangyo Kaisha, Japan

FED3 - 4
14:20

A New Method for Improving the Surface
Conduction Electron Emission
X. Siliang, L. Lu, Z. Lingguo, W. Shengli
Xi’an Jiaotong Univ., China

Surface-conduction electron emitters (SCEs) are normally fabricatedfrom PdO conductive ﬁlm. In this paper, we propose a method toincrease the emission current of SCE. The experiment result showsthe emission current can be increased from 5.32 µA to 7.58 µA bychanging the voltage polarity exerted to the nano-scale gaps.
----- Break ----15:00 - 15:40

Room 402

FED4: Field Emitters (3)Chair:
Co-Chair:M. Sasaki, Univ. of Tsukuba, Japan
M. Nagao, AIST, Japan

FED4 - 1
15:00

The Characteristics of Suppressor to Control an
Emission Angle for Micro-Column Built in Field
EmitterY. Neo, A. Koike, Y. Takagi, T. Fujino, M. Nagao*,
T. Yoshida*, H. Murata**, K. Sakai**, T. Aoki, H. Mimura
Shizuoka Univ., Japan*Nat. Inst. of Advanced Ind. S&T, Japan**Meijo Univ., JapanThe Micro-column was proposed as electron beam application, suchas microscope and lithography. According with the basic principleof reduction law, the structure was redesigned and the beam spot
diameters were estimated correctly. In this time, the new functioned
electrode, named suppressor, was introduced to the initial emission
angle.

111

FED

Effect of ultraviolet light irradiation on electron ﬁeld emission fromtitanium-oxide nanostructure is investigated. The ﬁeld-emission
current was increased by the irradiation. The enhancement in the ﬁeldemission current by UV light with a wavelength λ= 365 nm is larger
than that with λ= 405 nm.

Friday
FED4 - 2
15:20

December 3
Work Function Measurement of Y-Oxide/W(100)Surface by Using of Photoemission Electron
Microscope
T. Kitaguchi, K. Furuta, H. Nakane
Muroran Inst. of Tech., JapanA cathode material of a low work function is needed to achieve ahigh performance electron source. We measured the work function ofW(100) surface modiﬁed with Y2O3 by using of photoemission electron
microscope. The work function of Y-oxide/W(100) surface is measured
to be 2.7 eV.
Author Interviews
16:20 – 17:20

Sponsor:
JSPS 158th Committee on Vacuum Nanoelectronics

Supporting Organizations:Technical Group on Information Display, ITE
Technical Committee on Electronic Information Displays, Electronics
Society, IEICE

Asia Display 2011
Kunshan, China

SID 2011
International Symposium, Seminar and Exhibition
May 15-20, 2011
Los Angeles, California, U.S.A.
112

Wednesday

December 1

Workshop on Organic LED Displays
Wednesday, December 1
13:20 - 14:50

Main Hall

OLED1: OLED Keynote & Materials
Chair:
Co-Chair:Y. Kijima, Sony, Japan
T. Inoue, TDK, Japan

OLED1 - 1: Invited Challenges Towards the Next-Generation
13:20
OLED Materials and Devices

OLED

T. Tsutsui
Kyushu Univ., Japan
Progresses in materials and devices in OLEDs in these twenty years
have been summarized, and present attainments of research anddevelopment in OLEDs are discussed. Then issues needed for further
studies for the progress in science and technology on OLEDs are
discussed.
OLED1 - 2: Invited Highly Efficient Fluorescent Blue OLED
13:55
Based on New Electron Transport Materials withHigh Electron Mobility
S. Kusano, M. Nagaoka, E. Takahashi, S. Fukuchi,
T. Fukuchi, N. Yokoyama
Hodogaya Chem., Japan
A series of new electron transporters showing high electron mobility
and high Tg has been developed. I-V-L characteristics of blue OLED
were measured in temperature range of 28-80℃. Material with higher
mobility showed minor temperature dependence of driving voltage, andevident temperature dependence of current efﬁciency is discussed.
OLED1 - 3
14:20

Optimization of Carrier Balance in Phosphorescent
Polymers for Highly Efficient OLED Devices
G. Motomura, M. Suzuki, T. Shimizu, S. Tokito*
NHK, Japan*Yamagata Univ., Japan

We have evaluated the carrier transport properties in phosphorescentpolymers having carrier transport and phosphorescent units. The
mobility observed by Time-of-Flight measurements depended on theconcentration ratio of carrier transport units. An external quantum
efﬁciency of 14.5% in OLEDs using phosphorescent polymers wasachieved by optimizing the carrier balance.

113

Wednesday
OLED1 - 4
14:35

December 1
Study of Carrier Injection in PDOF/Ca Interface byUsing Carrier Transfer Simulation Method
I. Yamashita, H. Onuma, R. Nagumo, R. Miura,
A. Suzuki, H. Tsuboi, N. Hatakeyama, A. Endou,
H. Takaba, M. Kubo, A. Miyamoto
Tohoku Univ., JapanWe analyzed the carrier injections in PDOF/Ca interfaces by using
carrier transfer simulation method based on a quantum chemistrycalculation and Monte Carlo methods. We investigated the relationshipbetween the interface structures and carrier injection properties.
----- Break ----15:00 - 16:10

Main Hall

OLED2: OLED Soluble Technologies
Chair:
Co-Chair:

K. Nakayama, Yamagata Univ., JapanT. Wakimoto, Merck, Japan

OLED2 - 1: Invited Soluble Hole Injection Materials Applicable
15:00
to Hybrid and Printed OLED Devices
K. Monzen, N. Nakaie, T. Yamada
Nissan Chem. Inds., JapanWe are developing the inks for wet coating, named ELsource that canbe used as hole injection layer in OLED devices. The luminance ofhybrid OLED device using the latest ink has increased two times morethan that using conventional ink.
OLED2 - 2
15:25

A High-Performance Hybrid OLED Device Assisted
by Evaporated Common Organic Layers
T. Higo, T. Matsumoto, T. Imai, T. Yoshinaga, Y. Obana,T. Hirano, T. Sasaoka, T. Urabe
Sony, Japan

We propose a novel OLED structure named “Super Hybrid OLED”,
which is consisted of polymer and small molecule layers. The Super
Hybrid OLED has excellent performance in the blue device (0.14, 0.09)
of current efﬁciency of 6.1 cd/A. Both red and green Super Hybrid
devices showed equivalent performances to all-polymer devices.

114

Wednesday
OLED2 - 3
15:40

December 1
A Novel Solution Processable Hole-Transport
Polymer and Its Applications on Organic
Electroluminescent Devices
J.-H. Li, A. Raju, P. Almar, T. Hirai, M. Bown, K. Ueno
Commonwealth Scientific & Ind. Res. Org., Australia

A new solution processable hole-transport material (HTL) andthe according devices of ﬂuorescence and phosphorescence aredemonstrated in this presentation. Results showed that the device
performances based on this HTL are comparable with the ones withtraditional HTL, NPD.
Highly Efficient Solution-Processed
Phosphorescent Organic Light Emitting Diode
Using Polymer Host

OLED

OLED2 - 4
15:55

T. Sawabe, I. Takasu, Y. Mizuno, T. Sugizaki, A. Wada,
T. Ono, J. Yoshida, S. Enomoto, A. Hirao, I. Amemiya,
C. Adachi*
Toshiba, Japan*Kyushu Univ., Japan
We report a highly efﬁcient solution-processed blue phosphorescentorganic light-emitting diode (OLED) with maximum external quantum
efﬁciency (EQE) of 20.9% and the maximum power efﬁciency of 40 lm/
W. Our results show that solution-processed OLEDs can achieve highefﬁciency close to the theoretical limit.
----- Break ----16:40 - 18:05

Main Hall

OLED3: OLED Display Applications
Chair:
Co-Chair:S. Aratani, Hitachi, Japan
A. Mikami, Kanazawa Inst. of Tech., Japan

OLED3 - 1: Invited 15-in. RGBW Panel Using Two-Stacked White
16:40
OLED and Color Filter for TV Applications
C.-W. Han, S.-H. Pieh, H.-S. Pang, J.-M. Lee, H.-S. Choi,
S.-J. Bae, H.-W. Kim, W.-S. Ha, Y.-H. Tak, B.-C. Ahn
LG Display, Korea
We fabricated 15-in. HD panel employing the two-stacked WOLEDsand color ﬁlter, of which color gamut is up to 101.2% (CIE1976).
The WOLEDs exhibit a current efﬁciency of 61.3 cd/A and a power
efﬁciency of 30 lm/W at 1000 nit and their CIE coordinate is (0.340,
0.334).

115

Wednesday
OLED3 - 2
17:05

December 1
High Efficient Top Emitting OLED Micro Display for
Personal Display Application
C. Y. Park, S. Lee, C.-H. Hyun, S. K. Kang, B.-C. Kwak*,
H.-S. Lim*, O.-K. Kwon*, H. K. Chung
Samsung Mobile Display, Korea*Hanyang Univ., Korea

A 0.4-in. VGA OLED Micro Display composed of Si wafer backplane
and white OLED was demonstrated. A high current efﬁciency of 18.4
cd/A (conversion white efﬁciency 4 cd/A) for single optical path length
top emitting white OLED was achieved. A HMD using OLED Micro
Display was demonstrated for personal display application.
OLED3 - 3
17:20

Design of the LTPS Process Compatible High
Performance Distributed Bragg Reflector (DBR)
Using High k Dielectrics
D. Kwon, J. Yoon, C. Im, I. Lee, J. Lee, S. Kim
Samsung Mobile Display, Korea

The high performance DBR consisted of multi SiO2/high k dielectric
layers was developed. For low temperature poly-Si (LTPS) processcompatibility, we designed it as a gate dielectric also. We achieved
color gamut over 100% and improved light efﬁciency over 80% without
degradation of thin ﬁlm transistor (TFT) property.
OLED3 - 4
17:35

Rapid Thermal Annealing (RTA) Skipped Bottom
Emission 5 Mask AMOLED Displays with a Low k
Organic Interlayer
I. Lee, C. Im, D. Kwon, J. Yeo, J. Yoon, J. Kim, Y. Kim,
J. Lee, S. Kim
Samsung Mobile Display, Korea

The world ﬁrst LTPS 5 mask AMOLED panel was designed by placing
the gate and the pixel on the same plane. With RTA process skipped,
we achieved mobility of 81 cm2/Vs for the TFT with an organic interlayer.
Finally, LTPS 5 mask 12.1-in. WXGA AMOLED panel was fabricatedwithout RTA process.
OLED3 - 5L OLED-on-CMOS Based Single Chip Microdisplay
17:50
and Image Sensor Device
R. Herold, U. Vogel, B. Richter
COMEDD, Fraunhofer Inst. for Photonic MicroSyss.,
Germany
After ﬁrst reports of the principle of a single chip mircodisplay andcamera device, this paper presents the ﬁrst characterization results ofa chip with active matrix camera. Operation will be explained by blockschematic. A second part shows the characterization results of thecamera and the display.
Author Interviews
18:00 – 19:00
116

Thursday

December 2
Thursday, December 2

9:00 - 10:15

Room 204

FLX4/OLED4: Flexible OLED
Chair:
Co-Chair:T. Kamata, AIST, Japan
S. Naka, Univ. of Toyama, Japan

FLX4/
OLED4 - 1
9:00

Solution-Processed Organic Films of Multiple SmallMolecules and White Light-Emitting Diodes
W. Dongdong, W. Zhaoxin, Z. Xinwen, J. Bo, L. Shixiong,
W. Dawei*, H. Xun

We found that the spin-coated ﬁlms of NPB, and blends of NPB
and DPVBi, though having lower densities, were more uniform thantheir vacuum-deposited counterparts. Using the spin-coated ﬁlms of
NPB:DPVBi as mixed host, doped with blue and yellow dyes, new whiteorganic light-emitting devices (WOLEDs) were demonstrated.
FLX4/
OLED4 - 2
9:20

Flexible OLED Encapsulation by Glass Base
Technology
G. Chen, S.-T. Yeh, P.-I Shih, J.-L. Wu, K.-Y. Cheng,
L.-Y. Jiang, Y.-Y. Chang
ITRI, Taiwan

A ﬂexible OLED encapsulation process was successfully developedwith glass base OLED mass production equipment. These ﬂexible
encapsulation OLED devices have good ﬂexibility and environment
reliability. We expected this approach will be the important way to
manufacture the ﬂexible OLED devices using currently most OLED
equipment facility.
FLX4/
OLED4 - 3
9:40

Graphene Sheet Synthesized with Microwave
Eradiation and Interlinked by Carbon Nanotubes forHigh-Performance Transparent Flexible Electrodes
G. Xin, W. Hwang, N. Kim, H. Chae
Sungkyunkwan Univ., Korea

High quality graphene was obtained though microwave irradiating
expansion following a solution process. By combining Carbon
Nanotubes (CNTs) as bridges between graphene ﬂakes, allowed thefabrication of high performance conductive ﬁlms with conductivities
and optical properties: 181 Ωsq-1 at 82.2% transmittance after chemicaltreatment and doping.

117

OLED

Xi’an Jiaotong Univ., China*Univ. of Arkansas, USAThursday

December 2

Fabrication of QVGA Flexible Phosphorescent
FLX4/
OLED4 - 4L AM-OLED Display using Ink-jet Printing
10:00
M. Suzuki, H. Fukagawa, G. Motomura, Y. Nakajima,
M. Nakata, H. Sato, T. Shimizu, Y. Fujisaki, T. Takei,
S. Tokito*, T. Yamamoto, H. Fujikake
NHK, Japan*Yamagata Univ., JapanWe demonstrated a 5-in. QVGA ﬂexible phosphorescent AM-OLED
display driven by OTFTs on a plastic substrate. Cross-linked oleﬁnpolymer was used as the gate insulator. Phosphorescent polymer
materials were used for emitting layer of OLEDs, which were patternedby ink-jet printing. Color moving images were achieved by the display
panel.
----- Break ----10:40 - 11:50

Room 501

OLED5: OLED Device Technologies
Chair:
Co-Chair:K. Monzen, Nissan Chem. Inds., Japan
H. Kuma, Idemitsu Kosan, Japan

OLED5 - 1: Invited Surface-Light-Emitting Transistors Based on
10:40
Vertical-Type Metal-Base Organic Transistors
K. Nakayama, Y.-J. Pu, J. Kido
Yamagata Univ., JapanThe metal-base organic transistor (MBOT) is a promising verticaltype organic transistor composed of simple layered structure and it
can drive large current with low voltage. MBOT also can be applied forsurface-light-emitting transistors by combining with OLED materials
that realize both functions of OLED and OTFT.
OLED5 - 2
11:05

Performance Improvement of White Phosphorescent
Organic Light-Emitting Diodes by Using Composite
Host Structure to Enhance the Carrier Injection
F.-S. Juang, L.-A. Hong, C.-Y. Chen, S.-H. Wang,
Y.-S. Tsai, Y. Chi*, H.-P. Shieh**Nat. Formosa Univ., Taiwan*Nat. Tsing Hua Univ., Taiwan**Nat. Chiao-Tung Univ., Taiwan

Device characteristics of phosphorescent OLEDs with composite hoststructure were investigated by co-doping hole and electron transporttype hosts in emitting layer. The improved of charge carrier injection
and conﬁned of exciton within recombination zone were achieved.
White OLED shows the efﬁciencies of 34.5 cd/A and 24 lm/W at 1000
cd/m2.
OLED5 - 3

118

Withdrawn

Thursday

December 2

OLED5 - 5L High-Efficient White Organic Light-Emitting Diodes
11:20
with a Three-stack Multi-Photon Emission Structure
Shingo Ishihara
Hitachi, Japan
We have investigated 3-stack MPE WOLEDs with all phosphorescentemitters. The current efﬁciency and the power efﬁciencies obtained
were 129 cd/A and 27 lm/W at 0.1 mA/cm2, respectively.
OLED5 - 4
11:35

Low Temperature Color Filter on Thin Film
Encapsulation AMOLED for Flexible Top Emission

OLED

S. Kim, H. S. Shim, H.-J. Kwon, Y. T. Chun, I. Kee,S. Y. Lee, S. Lee*, J. H. Kwack*, D. Han*, M. S. Song*,
S. Kim*Samsung Elect., Korea*Samsung Mobile Display, Korea
We developed low temperature color ﬁlter on thin ﬁlm encapsulation
AMOLED panel for ﬂexible display, which are performed under 90℃ to
be compatible to OLED device. Here, new optical system composedof LTCF and OLED micro cavity, can demonstrate high outdoor
readability, low power consumption, and a wide viewing ability.
----- Lunch ----13:20 - 16:20

Poster/A.I. Room

Poster OLEDp: OLED Technologies
OLEDp - 1

UV-Influence Suppressed on the Device
Characteristic of a-IGZO Thin-Film Transistors Using
Solution Based TiOx
C.-W. Chou, H.-H. Lu, H.-C. Ting, T.-H. Shih, C.-Y. Chen,
Y.-S. LinAU Optronics, Taiwan

The TiOx ﬁlm was proposed to lower the ultra-violet (UV) inﬂuenceon the device characteristics of amorphous indium gallium zinc oxide(a-IGZO) thin-ﬁlm transistors (TFTs). After UV treatment, a-IGZO
TFTs passivated with TiOx ﬁlm showed less shift and degradation onelectrical characteristics.
OLEDp - 2

High Transparency Organic Light-Emitting Diodes
Based on Multilayer Transparent Electrodes
J. Choi, H. Cho, S. Yoo
KAIST, Korea

We present organic light-emitting diodes (OLEDs) based on multilayertransparent electrodes (MTEs) which exhibit luminance over 8000cd/m2
and turn-on voltage of 2.7 V. The MTEs consist of Ag/Cs2CO3 cathodewith a ZnS capping layer. Our OLEDs show 82% of peak transmittance(at 600 nm) and 73% average transmittance in the visible region.
119Thursday
OLEDp - 3

December 2
Optimization of Micro Lens Array (MLA) Pattern for
the Improvement of Light Extraction Efficiency in
OLED Devices
H. J. Lee, H. K. Bae, B.-S. Kim, C. S. Oh, C.-G. Son*,
L. S. Park
Kyungpook Nat. Univ., Korea*Yeungnam Univ., Korea

In this paper we discussed the effect of micro lens array (MLA) pattern
fabricated on the glass substrate of organic light emitting diode (OLED)
for improvement of light extraction efﬁciency. The effect of MLA on light
extraction efﬁciency from OLED was examined by the fabrication ofvarious MLA on the devices.
OLEDp - 4

Highly Polarized Electroluminescence from OLEDs
with a Quarter-Wave Retardation Plate Films and a
Reflective Polarizer
B. Park, Y. H. Huh, Y. I. Lee, J. C. Shin, H. G. Jeon
Kwangwoon Univ., Korea

We present a highly polarized OLED using a quarter-wave plate ﬁlm
and a reﬂective polarizer, which exhibited emissions of 13,400 cd/m2
with peak efﬁciency of 10.3 cd/A and degree of polarization over 40.
These are almost two times higher than those of the polarized OLED
using only a reﬂective polarizer.
OLEDp - 5

Improvement of Luminance Distribution inTransparent OLED by Using ITO/APC/ITO TopElectrode
T. Uchida, M. Yahata, K. Sakurai, K. Yamada, T. Satoh,T. TamuraTokyo Polytechnic Univ., Japan

We fabricated ﬁlms with both high electrical conductivity and highoptical transparency by using Zn-doped In oxides (IZO) with an
inserted thin Ag-Pd-Cu (APC) ﬁlm. Transparent organic light-emitting
diodes (OLEDs) with an IZO/APC/ IZO top electrode indicated better
luminance uniformity than the device with a single IZO cathode.
OLEDp - 6

High Hole Conduction Technology for OLEDsJ. H. Yu, W. S. Jeon, J. S. Park, D. C. Lim, Y. J. Doh,J. W. Choi, Y. H. Son, J. H. Kwon
Kyung Hee Univ., Korea

An interesting high hole conduction conﬁguration with extremely low
driving voltage characteristics in phosphorescent green OLEDs isreported. The conﬁguration of a hole transporting layer (HTL)/ electron
extraction layer (EEL)/ HTL results in 1.1 10-2 cm2/Vs hole mobility atelectric ﬁeld of 0.1 MV/cm2.

120

Thursday
OLEDp - 7

December 2
Properties of Organic Light Emitting Diodes with
Very Thin MoO3 Layer and Characterization of the
MoO3 Layer Deposited on ITO AnodeS. Yoshida, M. Kawamura, Y. Abe
Kitami Inst. of Tech., Japan

With a MoO3 hole injection layer, device performance of prepared
OLEDs was improved signiﬁcantly. The results showed optimum
thickness of the MoO3 to be 1.0 nm. Coverage of ITO surface was notcomplete with MoO3 of that thickness by AFM observation. It became
complete with the MoO3 of 2.0 nm.
OLEDp - 8

N. Takada, S. Hoshino, K. Suemori, T. Kamata,N. Ibaraki, S. Suenaga*, B. Tanaka*, N. Hamanaga*,
K. Aoe*, E. Tao*
AIST, Japan*Choshu Ind., Japan
The ﬂuorescence damage analysis technique taking account of the
optical interference effect and exciton diffusion/quenching mechanism
was developed and ITO (Indium-tin-oxide) sputtering damage to an
Alq3 (tris(8-hydroxyquinoline) aluminum) ﬁlm was evaluated. Using
the model that sputtered ITO particles scrape off Alq3 surface, we
elucidated Alq3 ﬁlm damage of about 5nm.
OLEDp - 9

Pre-Metered Horizontal Dipping Method for Simple
Fabricating Large OLEDs
B. C. Park, H. G. Jeon, K. H. Choi
Kwangwoon Univ., Korea

Pre-metered horizontal dipping (H-dipping) was studied for fabricating
OLEDs by using concave meniscus of used solutions. H-dipped OLEDs
were fabricated with high performance; maximum efﬁciency of 19.3
cd/A with 40,600 cd/m2. Patterned OLEDs on 5.6-in. substrates weresuccessfully fabricated, implying that H-dipping holds great potential forlarge-area OLEDs.
OLEDp - 10 Withdrawn

121

OLED

Fluorescence Analysis of ITO-Sputtering Damage ofan Organic Film

Thursday

December 2

OLEDp - 11 New Small Molecule Host System for SlutionPocessed Red Phosphorescent OLEDs
Y. H. Son, K. H. Kim, W. S. Jeon, J. S. Park, D. C. Lim,Y. J. Doh, J. W. Choi, J. H. Kown
Kyung Hee Univ., Korea
High efﬁciency solution-processed red phosphorescent OLEDs withnew small molecule mixed host systems are reported. This fabricated
red phosphorescent OLED with (Ir(phq)2acac) dopant and 2-TNATA:
TPBI mixed host has a driving voltage of 5.2 V and maximum current
and power efﬁciencies of 17.8 cd/A and 11.3 lm/W, respectively.
OLEDp - 12 Combination of Inorganic Hole Injection Layer andOrganic Hole Transport Layer in OLED Technology
Z. Hotra*,**, P. Stakhira*, V. Cherpak*, D. Volynyuk*,
L. Voznyak*, N. V. Kostiv**Lviv Polytechnic Nat. Univ., Ukraine**Rzeszow Univ. of Tech., Poland

In this work we proposed OLED structure with inorganic copper iodide(CuI) as hole injection layer combine with organic nickel phtalocyanine(NiPc) as hole transport layer. It was shown that combine inorganic CuIhole injection layer and organic NiPc as hole transport layer reduced
operating voltage and improved OLED performance.
OLEDp - 13 Novel and High Efficient Yellow Phosphorescent
Iridium Emitters
H.-L. Huang, T.-C. Chao, M.-R. Tseng
ITRI, Taiwan
We investigated and synthesized different orientation and substituted
group of the thieno-pyridine framework organo-iridium yellow
complexes (PO-01, PO-01-TB). The electroluminescent current
efﬁciencies of the devices were from 62.8 cd/A to 64.8 cd/A under thebrightness of 1000 cd/m2 and EQE were all above 18.5% to 20.4%.
OLEDp - 14 Highly Operational Color Stability of Blue Organic
Light-Emitting DiodeT.-L. Chiu, P.-Y. Lee, C.-H. Hsiao*, J.-H. Lee*,
C.-Y. Chen*, M.-K. Leung*
Yuan Ze Univ., Taiwan*Nat. Taiwan Univ., Taiwan
A color stability blue organic light-emitting device (B-OLED) with blue
phosphorescent dopant iridium(III)bis(4,6-diﬂuorophenyl-pyridinatoN,C2ʼ)picolinate (FIrpic) was demonstrated in this paper by ﬁne-tuning
its doping concentration. Under continuous operation, the maximum
color coordinate variation of B-OLEDs with FIrpic concentration 3~15%
is ∆x=0.008 and ∆y=0.02 as applied voltage from 4.5 to 11V.

122

Thursday

December 2

OLEDp - 15 Fabrication of Thin Film by Plasma Polymerization
and Application to Organic Light Emitting Device
S. Ojiro, R. Koyama, S. Hikita, Y. Sato, S. Yoshikado
Doshisha Univ., Japan
Thin ﬁlm appricable to light emitting device was deposited using
plasma polymerization of benzene monomer by discharge at 13.56
MHz. The effects of discharge power and electrode distance on thequality were investigated. Sharp infra-red absorption peak caused by
C=C expansion and contraction of benzene ring was observed around
133 Pa.

Y.-H. Kim, S. Y. Lee, W. Song, M. Meng, H. J. Yang,
K. W. Kim, W. Y. Kim
Hoseo Univ., Korea
4-wavelengh white organic light-emitting diode concluding three
primary colors was fabricated using two emissive layers. White
emission characteristics of the OLED such as CIE coordinates,
efﬁciency, and max luminescence were (0.32,0.37 ) at 6 V, 7.1 cd/A at
199 cd/m2, and 10659 cd/m2 at 8 V, respectively.
OLEDp - 17 High Color-Stability for White Organic Light Emitting
Devices by Using Phosphorescent Sensitizer
FluorescentF.-S. Juang, L.-A. Hong, C.-J. Hsiao, S.-H. Wang,
M.-H. Ho*, C.-H. Chen*
Nat. Formosa Univ., Taiwan*Nat. Chiao Tung Univ., Taiwan
High color-stability white-OLED was achieved by using a yellow dopant
in phosphor-sensitized emitter and optimizing the interlayer thickness.
Device shows the E.Q.E. of 8.2%, and the efﬁciency of 21.5 cd/A with
CIE (0.40, 0.46) at 20 mA/cm2. The shift of CIEX,Y down to (-0.001,-0.001) from 20 to 200 mA/cm2.
OLEDp - 18 Inorganic Nanolaminates on Polymer Substrates as
Gas-Diffussion Barriers in Flexible Electronics
Structures
J. -H. Choi, Y. -W. Park, J. W. Jeong, T. H. Park, H. J. Choi,
E. H. Song, D.-J. Ham, J.-W. Lee*, C.-H. Kim*, B.-K. Ju
Korea Univ., Korea*Cheil Inds., Korea

A SiO2/Al2O3 nanolaminate gas-diffusion barrier ﬁlm on a plastic
substrate was proposed. The Ca-test indicates that such laminate
ﬁlms can effectively suppress the void defects of an inorganic layer,
and are signiﬁcantly less sensitive against moisture permeation. Thisnanostructure is veriﬁed as being useful in highly water-sensitive
ﬂexible organic electronics.
123

OLED

OLEDp - 16 Fabrication of 4-Wavelength White Organic LightEmitting Diodes Including Two Emissive Layers andThree Primary Colors

Thursday

December 2

OLEDp - 19 Improved Lifetime of Highly Flexible OLEDs Basedon Multilayer Transparent Electrodes with Enhanced
Barrier Performance
S. Park, K. H. Jung, C. Yun, H. Cho, B.-S. Bae, S. Yoo
KAIST, Korea
We present multilayer transparent electrodes (MTEs) fabricated onpolyethylene naphthalate (PEN) substrates coated with organicinorganic hybrimers that lead to improved barrier characteristics.
Lifetime measurement shows that ﬂexible organic light-emitting diodes(OLEDs) with these MTEs have a reliability that is far superior to ITObased counterparts under repeated bending.
OLEDp - 20 Evaluation Technology to Verify Flexible Gas Barrier
Property Based on Electrical Calcium Degradation
for Electronics Application
E. H. Song, Y. W. Park, J. W. Jeong, J. H. Choi,
T. H. Park, H. J. Choi, B. K. Ju
Korea Univ., Korea
Ca-test was designed to evaluate barriers property by checking current
changing through the tested calcium cell. We introduce newly designed
Ca-test model which can measure about two times faster than formal
model. Moreover this structure can be bent, so we can analyze barrier
property degradation by forcing bending stress.
OLEDp - 21 Transfer-Printed Integrated Circuits for Display
Backplanes
C. A. Bower, D. Gomez, K. Lucht, B. Cox, D. Kneeburg
Semprius, USA
Conventional thin-ﬁlm transistor (TFT) backplanes do not exhibit theperformance required for current-driven active-matrix OLED (AMOLED)
displays. Here, we report on the latest results of fabricating activematrix display backplanes using transfer-printed high-performance
integrated circuits. We will present the print yield and print accuracy, as
well as strategies for backplane fabrication.
OLEDp - 22 The Electrical Characteristics of Organic Light
Emitting Diodes Applied Organic Photo Sensor for
Emotional Lighting Applications
J. W. Jeong, Y. W. Park, T. H. Park, J. H. Choi, H. J. Choi,
E. H. Song, J. I. Lee*, H. Y. Chu*, B. K. Ju
Korea Univ., Korea*Elect. & Telecommun. Res. Inst., Korea

This paper reports on a study of the emission properties of organic
light emitting diodes (OLEDs) controlled by an organic photo sensor(OPS) for emotional lighting applications. The luminance of the OLED
increased from 283.4 cd/m2 to 1134 cd/m2 when the OPS was exposed
to different illumination levels.

124

Thursday

December 2

OLEDp - 23 The Influence of Operating Temperature on theElectrical Characteristics of Pentacene Thin-Film
Transistors
L.-Y. Chiu, C.-C. Tai, W.-Y. Chou, F.-C. Tang,
H.-L. Cheng
Nat. Cheng Kung Univ., Taiwan
The effect of temperature on the electrical characteristics ofpentacene-based organic thin-ﬁlm transistors (OTFTs), including
mobility, threshold voltage and hysteresis behaviors, was investigated.
Increased charge mobility and enlarged hysteresis were observed at
higher temperature, suggesting that the environmental thermal energy
plays an important role to device performance of PEN-based OTFTs.

OLED

OLEDp - 24 Withdrawn
OLEDp - 25 The Study of the Performance of Organic Solar
Cells by the Electrode and Characteristics ofInterfacial Layers
N. S. Knag*,**, J.-W. Yu***, I.-D. Kim**, J.-M. Hong**,
B.-K. Ju*
*Korea Univ., Korea**Korea Inst. of S&T, Korea***Kyung Hee Univ., Korea

We reported on the effect of organic photovoltaics by conductivity ofinterlayer such as PEDOT:PSS and TCO (Transparent conducting
oxide) such as ITO, which is used P3HT and PCBM. And, we havemeasured with exactly deﬁned shadow mask to study effect of solar
cell efﬁciency according to conductivity of hole transfer layer.
OLEDp - 26L Electroluminescence Properties of Novel HyperBranched Light-Emitting Polymers Based Devices
R.-H. Lee, W.-S. Chen, Y.-Y. WangNat. Chung Hsing Univ., Taiwan
A series of hyper-branched polyalkylﬂuorenes (HBPFs) with
an electron-conducting group, triazine and a hole-conducting
group, triphenylamine as molecular cores were synthesized by
the Suzuki coupling reaction. This series of HBPFs with different
conjugated lengths were end-capped with a hole-conducting group,
triphenylamine, and a rigid moiety, tetraphenylsilane.

125Thursday

December 2

OLEDp - 27L Surface Plasmon Enhanced Optoelectronic
Performance of a Conjugated Polymer Using Ag Dot
ArraysJ. Y. Kim, K. H. Cho, Y. Yeo, K. C. Choi
KAIST, Korea
In this work, the optoelectronic performance of a conjugated polymer
with silver dot arrays was investigated. The silver dot fabrication basedon the imprint method resulted in a 2.7-fold enhancement of theintegrated PL intensity by successfully coupling between the surface
plasmon and excitons in the emitting layer.
OLEDp - 28L Solution Processed White Light Emitting Devices
Using a Novel Orange Triplet Emitter
J.-Y. Liao, T.-C. Chao, J.-S. Lin, M.-R. Tseng
Material & Chem. Res. Labs. Ind. Tech. Res. Inst.
(ITRI), Taiwan
The solution processed white light emitting devices composed ofa novel orange emitter, PO-01-TB, and the blue emitter, FIrpic, arestudied. Devices with efﬁciencies of 22 cd/A and 10 lm/W are reported
by mixing the orange and blue emitters into PVK/OXD-7 matrix.
OLEDp - 29L The Other Crucial Factor Dominates the Holes
Injection Efficiency of Ultra-thin Anode Buffer Layer
on Organic Light Emitting Devices
S.-Y. Chu, Y.-C. Chen, H.-H. Huang, P.-C. Kao*Nat. Cheng Kung Univ., Taiwan*Nat. Chiayi Univ., Taiwan
In this study, we have investigated surface energy of ITO substrates
modiﬁed by ultra-thin buffer layers plays crucial factor as importantas energy barrier. With larger surface energy, organic light emitting
devices could get superior performance even there exist larger barrier
between ultra-thin buffer layer modiﬁed ITO and organic layer.
OLEDp - 30L Synthesis and Characterization of Novel Blue-LightEmitting Fluorene-Carbazole Copolymers with Boryl
Substitutions
Y.-H. Chen, Y.-Y. Lin, Y.-C. Chen*, J. T. Lin*, R.-H. Lee,
R.-J. Jeng
Nat. Chung Hsing Univ., Taiwan*Academia Sinica, Taiwan
Novel carbazole/ﬂuorene-Based copolymers with dimesitylboron
pendants were synthesized by Suzuki polymerization for blue lightemitting diodes. Different energy levels and electroluminescence
performances were observed for the copolymers via tuning the
conjugation length of the side chain.

126

Thursday

December 2

OLEDp - 31L Metal Mask Printing Method for Organic LightEmitting Diodes Fabrication
H. Ishiguro, S. Naka, H. Okada
Univ. of Toyama, Japan
We have investigated “metal mask printing method” for organic lightemitting diodes, which is simple technique for short-tact time, largearea and high-resolution device fabrication. Maximum luminance of 270
cd/m2 was obtained for self-aligned single layer device.
OLEDp - 32L Enhanced Electron Injection into Alq3 Based OLEDs
Using a Thin Potassium Carbonate Buffer Layer
P.-C. Kao, C.-C. Chang, S.-I. Lin

A cathode buffer layer of potassium carbonate (K2CO3) was used to
improve the electro-optical properties of organic light-emitting diodes(OLEDs). The improvement can be attributed that the electron-injection
efﬁciency was enhanced due to a lower electron injection barrier, which
improves the charge carrier balance in OLEDs.
----- Break ----16:40 - 18:05

Room 501

AMD5/OLED6: AM-OLED
Chair:
Co-Chair:D. Pribat, SungKyunKwan Univ., Korea
Y. Fujisaki, NHK, Japan

Invited Process Development of Amorphous IndiumAMD5/
OLED6 - 1: Gallium-Zinc-Oxide Thin-Film Transistors for Large
Size AMOLED Applications
16:40
H.-C. Ting, H.-H. Lu, T.-H. Shih, L.-C. Lee, C.-W. Chou,
L.-P. Shin, S.-S.Wang, T.-C. Wan, C.-Y. Chen, Y.-H. Lin
AU Optronics, Taiwan
In this paper, we will show how to approach a-IGZO TFTs AMOLED
in Gen 6 Fab currently. We evaluated the TFTs structure from bottom
gate coplanar to BCE type with Mo/Al/Ti as S/D electrode. Using
photosensitive organic passivation layer and TiOx coating to improved
the device performance and stability.

127

OLED

Nat. Chiayi Univ., Taiwan

Thursday
AMD5/
OLED6 - 2
17:05

December 2High Mobility Oxide Semiconductor TFT for Circuit
Integration of AM-OLED
E. Fukumoto, T. Arai, N. Morosawa, K. Tokunaga,
Y. Terai, T. Fujimori, T. Sasaoka
Sony, Japan

We have developed a high mobility and high reliability oxide
semiconductor TFT which used ITZO as a channel material. Its mobility
and ΔVth after 20,000sec of BTS test were 30.9 cm2/Vs and 0.1 V. We
have achieved a stable enhancement type TFT, which realizes circuit
integration for AM-OLED.
AMD5/
OLED6 - 3
17:25

A New Simple Pixel Circuit Compensating theThreshold Voltage for AMOLED Displays
Y.-I. Hwang, Y.-S. Park, K.-N. Kim, B.-H. Kim,
B. H. Berkeley, S.-S. Kim, B.-D. Choi*
Samsung Mobile Display, Korea*Sungkyunkwan Univ., Korea

We propose new simple pixel compensation circuits with three orfour thin ﬁlm transistors (TFTs) and one capacitor. In addition tocompensating the deviation of the threshold voltage of the driving
TFTs, we can compensate IR-drops and reduce the number ofcomponents in compensation circuits with these novel circuits.
AMD5/
OLED6 - 4
17:45

4.1-in. Full Color AMOLED Driving by Top Gate
Nanocrystalline Silicon Thin Film Transistor Array
K.-Y. Ho, H.-C. Lin, H.-S. Dai, P.-F. Lee, C.-C. Hsu,
S.-Y. Peng, C.-W. Lin, C.-H. Cheng, B.-C. Kung,
W.-Y. Chao, J.-Y. Yan, H.-C. Cheng
ITRI, Taiwan

High performance nanocrystalline silicon thin ﬁlm transistors areachieved with top gate staggered structure. The nc-Si is directly
deposited by 13.56 MHz plasma enhanced chemical vapor deposition(PECVD) at 200 C. Good device perf ormance, uniformity, andreliability make it possible to be integrated into active matrix organic
light emitting diode (AMOLED) applications.
Author Interviews
18:00 – 19:00

128Thursday

December 2

Workshop on 3D/Hyper-Realistic
Displays and Systems
Thursday, December 2
9:00 - 10:20

Room 412

3D1: Holography and 3D Display
Chair:
Co-Chair:T. Horikoshi, NTT DoCoMo, JapanK. Yamamoto, NICT, Japan

3D1 - 1:
9:00

Invited Spatial Imaging Based on Extremely HighDefinition Computational Holography — Wave-Field
Oriented 3D Imaging —K. Matsushima
Kansai Univ., Japan

3D1 - 2
9:20

24 Mega Pixels Phase Electroholography
T. Shimobaba, H. Nakayama, N. Masuda, N. Takada*,
T. ItoChiba Univ., Japan*Shohoku College, Japan

We report a phase-type electroholography that can reconstruct 3D
objects from 24-mega pixels phase-type CGHs, with large and wideviewing angle. To solve the problems of the size and viewing angle, weused 12 phase modulated LCDs. For real-time calculation, we used a
GPU cluster and the wave-recording plane method.
3D1 - 3
9:40

Simplified Novel Look-Up Table Method Using
Compute Unified Device Architecture
Z. Ali, J.-H. Park, N. Kim
Chungbuk Nat. Univ., Korea

In this study, we have exploited the parallel nature of the computations
involved in the process of digital holography using novel look-up table
method. We utilize CUDA enabled GPU to accelerate each step of
the digital holography. Our simulation results conﬁrm that the GPU
implementation is much faster than CPU.

129

3D

Extremely high-deﬁnition displays beyond Super Hi-Vision give us a
new horizon in the ﬁeld of 3D imaging. This paper introduces spatial
3D imaging brought by computational holography and techniques fornumerical propagation of wave-ﬁelds that make it possible to create thespatial 3D images.

Thursday
3D1 - 4L
10:00

December 2
Imaging Characteristics of Array of Dihedral Corner
Reflectors by Use of Gaussian Beam Decomposition
S. Yokoyama*,**, K. Nitta*, O. Matoba*, S. Maekawa***Kobe Univ., Japan**NICT, Japan

A methodology to analyze an imaging optics with dihedral corner
reﬂector array is reported. This methodology is based on the Gaussian
beam decomposition and achieves results of analysis with simple
operation for beam propagation. Usefulness of the methodology is
veriﬁed and novel characteristics obtained by the methodology arereported.
3D1 - 5L
10:10

A Real-Time Color Electrohorographic
Reconstruction System Using a Multi Graphics
Processing Unit
N. Takada, H. Nakayama*, S. Awazu*, Y. Ichihashi**,T. Shimobaba*, N. Masuda*, T. Ito*
Shohoku College, Japan*Chiba Univ., Japan**NICT, Japan

Electroholography is a technique for realizing three-dimensional (3-D)
television. We developed a color electroholographic system consistingof three liquid-crystal display panels and three graphics processing
units. Thesystem succeeded in animating 3-D images composed ofabout 1,500 points in each lightʼs primary color at nearly video-rate.
----- Break ----10:40 - 12:00

Room 412

3D2: 3D Display (1)Chair:
Co-Chair:K. Matsushima, Kansai Univ., JapanS. Yano, NHK, Japan

3D2 - 1:
10:40

Invited 3-D Display Interaction
M.-C. Park, H.-D. Lee, J.-Y. Son*
Korea Inst. of S&T, Korea*Daegu Univ., Korea

Interactions take place as two or more objects and/or beings effectupon one another. 3-D display enhances visual presence and enriches
personal experience. 3-D display interaction is effective to exchange
and share of thoughts, feelings, experiences and ideas. Our researches
are introduced in the aspect of 3-D display interaction.

130Thursday
3D2 - 2:
11:00

December 2
Invited 3D Volumetric Scanned Light Display with
Multiple Fiber Optic Light Sources
B. T. Schowengerdt, E. J. Seibel
Univ. of Washington, USA

A custom array of 16 singlemode optical ﬁbers positions the end ofeach ﬁber a different distance from a collimating lens, placing lightfrom each ﬁber at a different focus level. The superimposed multifocal
beams are raster-scanned to generate a volumetric display, with eachﬁber writing to a different layer.
3D2 - 3
11:20

LC Grin Lens for a Multi-View 3D Display
P. W. Wu, W. L. Chen, C. H. Shih, W. M. Huang
AU Optronics, Taiwan

A 5-view 2.83-in. 2D/3D switchable displays with low crosstalk andlow driving voltages were fabricated. By changing different applying
voltages, suitable LC orientations are conﬁgured to obtain good 3D
performance for displays of different optimal viewing distance design.
Moiré Pattern Reduction by Using Special Designed
Parallax Barrier in an Autostereoscopic Display
W.-T. Yen, C.-L. Wu, C.-L. Wu, C.-H. Tsai, C.-J. Chou
ITRI, Taiwan
To minimize the moiré effect, we simulate the relationship ofbrightness distribution and various design parameters of the parallax
barrier. According to the simulation results, a combination of multiple
parameters was chose to obtain a moiré free autostereoscopic display
based on the concept of mutual compensation among the design
parameters.
----- Lunch ----13:20 - 16:20

Poster/A.I. Room

Poster 3Dp: 3D/Hyper-Realistic Displays and Systems
3Dp - 1

An Evaluation Method of Cross-Talk on
Stereoscopic LCD with Frame Sequential Method
and a Directional Backlight System
A. Sakai, A. Hayashi, T. Kometani, H. Ito
Eizo Nanao, Japan

There are two types of cross-talk on stereoscopic LCD based frame
sequential method with a directional backlight system. One is opticalcross-talk in a directional backlight system, and the other is caused byslow response of LC panel. This paper considers about a method forevaluating them overall.

131

3D

3D2 - 4
11:40

Thursday
3Dp - 2

December 2
Perceived Depth Change between Real Objects withDifferent Visual Acuities of Both Eyes
K. Sadakuni, T. Inoue, H. Yamamoto, S. Suyama
Univ. of Tokushima, Japan

In stereoscopic display, the amount of perceived depth change isquickly decreased when both eyes have different visual acuities. On
the contrary, in real object, the amount of perceived depth change is
gradually decreased when both eyes have different visual acuities.
3Dp - 3

Study of 3D-Image Influence on Visual Region by
EEG Analysis
C.-Y. Chen, M.-D. Ke, Y.-R. Pan, C.-P. Chen,
S.-W. Cheng*
Nat. Yunlin Univ. of S&T, Taiwan

The electroencephalograms (EEG) of visual region from 60 volunteers
were measured during watching a 3D movie. While the volunteers
viewing a movie, α wave decreased but β wave increased in theoccipital zone (visual region). Besides, there was no difference
between viewing 2D and 3D movies.
3Dp - 4

Evaluation of Gray to Gray Performance in
Stereoscopic Displays
W.-C. Tsai, M.-H. Yang, H.-S. Ruan, C.-W. Chen,
K.-C. Chang, K.-S. Wang
AU Optronics, Taiwan

Methods of analyzing crosstalk in stereoscopic displays with arbitrary
gray level are demonstrated. We proposed novel viewpoints which are
based on gray to gray look-up table to quantify ghosting artifact and areapplicable to all types of stereoscopic displays.
3Dp - 5The Fabrication of Autostereoscopic Panel Used
Four-Level Diffractive Splitter on a Quartz Substrate
C.-Y. Chen, W.-C. Hung, Q.-L. Deng, Y.-R. ChangNat. Yunlin Univ. of S&T, Taiwan

In this paper, a new autostereoscopic panel used diffractive splitter isfabricated on a transparent quartz substrate. The diffractive efﬁciencyof the quartz four-level blaze grating can reach 55.3%, that the device
can replace the lenticular type or barrier type autostereoscopic panel,and make the brightness of panel much increased.

132

Thursday
3Dp - 6

December 2
Three-Dimensional Display Using a Roof Mirror Grid
Array and a Prism Sheet
Y. Maeda*, D. Miyazaki*,**, N. Hirano*, S. Maekawa***Osaka City Univ., Japan**NICT, JapanWe developed a three-dimensional display using a roof mirror gridarray, which is an optical imaging element that forms a real image, anda rotating prism sheet. The use of the rotating prism sheet can reduce
a blur caused by diffraction at the roof mirror grid array.
3Dp - 7

Reflective 3D LC Display with Patterned Retarder
K.-S. Bae, U. Cha, Y.-H. Kim, J.-H. Kim, C.-J. Yu
Hanyang Univ., Korea

We report a stereoscopic 3D liquid crystal display in a reﬂective type.
Using the cholesteric liquid crystal with a patterned retarder, two
orthogonal polarization states are obtained and thus the stereoscopic
images are constructed.

3D

3Dp - 8A New Basis Representation for Multiview Image
Using Directional Sampling
T. Yamada, T. Fujii
Tokyo Inst. of Tech., Japan

To compress or interpolate the multiview image efﬁciently, we propose
a new basis representation. By using directional sampling, we apply
directional 3D-DCT and directional 3D-DWT to three dimensional data.
In the experimental results, the proposed method showed better quality
than previous method, not only in the objective/ subjective evaluation.
3Dp - 9Development of a Novel Virtual Reality 3D Display:the “J-Display”
W. J. Tam, C. Vázquez
Commun. Res. Ctr., Canada

A novel type of stereoscopic 3D display to improve sense of virtual
reality is proposed. The display has a curvilinear surface that allows
stereoscopic objects to be viewed as being naturally "grounded" andnot cut off as with standard displays. A tabletop prototype is describedand future development is discussed.
3Dp - 10

A Scent-Emitting Thin Type LED Display Device witha Porous Screen, and It’s Application
A. Tomono, H. Katsuyama, K. Tomono*
Tokai Univ., Japan*Wartburg College, USA

We propose a new method where scents are ejected through thedisplay in order to enhance the reality of the visual images. A thin LED
panel ﬁlled with tiny pores was made for this experiment, and an air
control system using a blower was placed behind the display screen.
133

Thursday
3Dp - 11

December 2
Holographic Optical Elements for Stereoscopic
Vision on LCD Panel
W.-C. Su, C.-Y. Chen*, Y.-F. Wang*, H.-W. Ho*
Nat. Changhua Univ. of Education, Taiwan*Nat. Yunlin Univ. of S&T, Taiwan

A holographic image splitter for stereoscopic effect on liquid crystal
display panel is developed in this study. We designed and generated
a special holographic optical element to replace the traditional image
splitter in a stereoscopic display panel. Experimental results support
the idea well.
3Dp - 12Full Color Rewritable Photorefractive Large Area
Display Material
M. Yamamoto, P. Wang, T. Gu, W. Lin, H. Wanyun,
O. Siddiqui, A. Bablumyan*, A. Ordyan*, P. Blanche*,R. Voorakaranam*, N. Peyghambarian*
NITTO DENKO Tech., USA*Univ. of Arizona, USA

Organic polymer-based photorefractive materials which have bothbetter diffraction efﬁciency and longer grating persistency have been
improved. The materials were succeeded in principle-proving conceptof highly image-persistent and rewritable holographic display systems.
By using materials, we are aiming for developments of holographic
display devices such as medical imaging devices.
3Dp - 13L

3D Display with No Physical Constraints ForceFeedback Function
M. Tsuboi, S. Kimura, M. Fukumoto, T. Horikoshi
NTT DoCoMo, Japan

A 3D display with force feedback function is proposed. In proposedsystem, neither physical connections to outer point, actuators, norbatteries are needed to pen-type device. Also, horizontal motion
parallax is achieved and no conﬂicts between the position of 3Dimages and pen-type device.
3Dp - 14L

Variable Parallax 3D Display for Mobile Application
H. Song, Y.-S. Choi, K.-H. Choi, J.-M. Bae, H.-S. Lee,
S.-Y. Lee
Samsung Elect., Korea

A variable parallax 3D display with a backlight unit having partitions
in which a direction of light extraction angle can be regulated areproposed. Such concept was implemented in a prototype and veriﬁedthat it could switch 3D parallax images between a landscape mode andportrait mode.

134

Thursday

December 2

3Dp - 15L

Turn-type Color 3-D Display System Using Arrays of
LEDs
T. Shimizu, Y. Sakamoto, I. Fukuda
Kanazawa Inst. of Tech., JapanWe developed a depth sampling type 3-D display system. The system
is designed to capable of displaying a three-dimensional image byturning LEDs (Light Emitting Diodes) arrays. Recently, we successfully
improved the brightness of the 3D display system. This report provides
a detailed description of this improvement.
3Dp - 16L

Impact of Spatial 3D Imaging by Extremely HighDefinition Computational Holography
K. Matsushima, H. Nishi, Y. Arima, K. Higashi,
M. Nakamura, S. Nakahara
Kansai Univ., Japan----- Break ----16:40 - 18:00

Room 413

3D3/DES3: 3D System and Content
Chair:
Co-Chair:J.-Y. Son, Daegu Univ., Korea
T. Fujine, Sharp, Japan

3D3/
DES3 - 1:
16:40

Invited Full HD and Super-High Image Quality 3D
Plasma TV Technology
K. Tasaka, M. Kawashima, K. Suetsugi, M. Ishizuka,
T. Yamashita, Y. Sugio
Panasonic, Japan

This paper introduces the basic concept of Full HD and High Image
Quality 3D Plasma Theater System and the key technology of Full HD
and Super-High Image Quality 3D Plasma TV which was realized by
the newly developed technology of Plasma panel improvement andnew 3D system technology of both Plasma panel and 3D eyewear.

135

3D

Spatial 3D images created by high-deﬁnition computational holography
are actually demonstrated. The demonstrated 3D images are static
images at this stage. However, these presage the great future of 3D
displays beyond the Super Hi-Vision because of its strong sensation of
depth, which never has been caused by conventional 3D systems.

Thu./Fri.
3D3/
DES3 - 2:
17:00

December 2/3
Invited Real-Time 2D-to-3D Conversion: Basic
Concepts and Practical Use
K. Yamada, Y. Suzuki
JVC Kenwood Holdings, Japan

This paper describes the algorithm for our original 2D-to-3D conversion
technology, which is beginning to be used for both consumer andprofessional apparatuses to fulﬁll the growing need for high quality
3D contents. The algorithm has advantages in quality, numericalcomplexity, no need of frame memory and very low latency.
3D3/
DES3 - 3:
17:20

Invited From 3D technology to New Styles of Visual
ImagesM. Ikeo, A. Saito, Y. Nishida
NHK Media Tech., JapanThe desire to visualize our imagination in new ways has encouraged
the evolution of the media, while technical innovation has inspired ourimagination. However, recent rapid advances in digital technology areleading the media not to represent human imagination but to mirror
the actual world with ever greater reality. Can ﬁlmmakersʼ imagination
catch up with the hyperrealism of the visual media? Content creators
must shed the bonds of 3D images and develop new styles of visual
images.
3D3/
DES3 - 4:
17:40

Invited 3D Video Formats and Compression forContent Distributions
H. KimataNTT, Japan

Usage of 3D video would increase as the growth of 3D content
production. The suitable 3D video format depends on the purpose
in applications. This paper summarizes 3D video formats andcompression technologies distinguished by purposes and it addresses
the trends of stereoscopic video and multi-view video formats.
Author Interviews
18:00 – 19:00

Friday, December 3
10:40 - 12:10

Room 502

VHF8/3D4: 3D Human Factors
Chair:
Co-Chair:

136

S. Clippingdale, NHK, Japan
H. Yamamoto, Univ. of Tokushima, Japan

Friday
VHF8/
3D4 - 1:
10:40

December 3
Invited Safety in 3D Broadcast, and Study in 3D
Channel Starting Service
Y. Imai, K. Imanishi, T. Okunaga
SKY Perfect JSAT, JapanSKY Perfect TV started broadcasting 3D channel from June 2010 andcarried out the test shooting and the examination for a safe and easyto-watch 3D broadcast. We studied the cause of fatigue and discomfort
in watching 3D image by using images of soccer game and that of awoman.
VHF8/
3D4 - 2
11:10

Evaluation of Viewability to Hyper-Realistic Picture
N. Suzuki*, S. Yano*,***NICT, Japan**NHK, Japan

VHF8/
3D4 - 3
11:30

Measurement of Accommodation and Vergence
Responses while Viewing Two-View and Multi-View
3D Displays
H. Mizushina, I. Negishi, H. Ando*, S. Masaki
Advanced TeleCommun. Res. Inst. Int., Japan*NICT, JapanWe
measuredaccommodation
andvergence
responses
simultaneously while viewing two-view 3D display based on polarized
glasses and multi-view 3D display based on parallax barrier. Difference
between two-view and multi-view conditions was observed in thevergence response, but not in the accommodation response.
VHF8/
3D4 - 4
11:50

Influence of Luminance Gradient on Three
Dimensional Perception for Real Object and Digital
Image
K. Iwauchi*,**, T. Takahashi**, T. Eda**, T. Ishikawa**,
M. Ayama***Sharp, Japan**Utsunomiya Univ., Japan

We investigated 3D perception using real objects and digital images.
The results indicate that the absolute luminance value of the brightest
area and the luminance gradient are the two most important factors
for 3D perception of real objects, whereas a degree of gradientenhancement is needed for digital images.

137

3D

This paper provides a subjective and objective evaluation of theviewability of hyper-realistic images. First, we examined the preferable
viewing distance for images of different sizes, including monoscopic
and stereoscopic images. Second, we measured the eye movementsof participants in a previous experiment comparing preferable with nonpreferable viewing distance.

Friday

December 3

13:20 - 14:40

Room 502

3D5: 3D Image Quality
Chair:
Co-Chair:

M.-C. Park, Korea Inst. of S&T, Korea
T. Mishina, NHK, Japan

3D5 - 1:
13:20

Invited Crosstalk in 3D-TV: Modeling, Adaptive
Cancellation Algorithms and Perceptual Validation
L. Kerofsky, Y. Yoshida*, S. Deshpande, I. Sezan
Sharp Labs. of America, USA*Sharp, Japan

Reduction of crosstalk for active glasses 3D-TV is analyzed. Crosstalk
is characterized deﬁning in-range and out-of-range pixel pairs. A
distance minimizing algorithm cancels in-range crosstalk. Subjective
quality improvement is validated. An adaptive algorithm reducescrosstalk due to out-of-range values while preserving image quality.
3D5 - 2
13:40

Human Factor for 3D Angular Uniformity Intensity
Tolerance
R.-W. Liao, C.-S. Cheng, C.-H. Shih, W.-M. Huang
AU Optronics, Taiwan

We propose a simple human factor experiment to know the threshold
3D AIU (angular uniformity intensity) of human eyes. We design
different patterns corresponding to 3D AIU% to simulate the real caseof human eyes. According to results, we can deﬁne the threshold 3D
AIU is 98.82%.
3D5 - 3
14:00

A New Method for Quality Control of Shutter
Glasses 3D Displays
P. Boher, T. Leroux, V. C. Patton
ELDIM, France

We use a videoluminance meter to check the quality of shutter glasses
3D displays rapidly and easily. A dedicated pattern is applied to checksimultaneously the effect of the grey level on the other eye and of thetemporal synchronization. The visual impact of grey level instabilities isprecisely quantiﬁed.

138

Friday

December 3

3D5 - 4
14:20

Effects of Overlapping Images on Image Flipping in
Autostereoscopic Displays
H. Ujike*,*2, S. Uehara*,*3, G. Hamagishi*,*4, K. Taira*,*3,
T. Koike*,*5, C. Kato*,*5, T. Nomura*,*6, T. Horikoshi*,*7,
K. Mashitani*,*8, A. Yuuki*,*9, K. Izumi*,*10,
Y. Hisatake*,*11, N. Watanabe*, Y. Nakano*,*12*Japanese Ergonomics Nat. Committee, Japan*2AIST, Japan*3Toshiba, Japan*4Sony Mobile Display, Japan*5Hitachi, Japan*6Sharp, Japan*7NTT DoCoMo, Japan*8Sanyo Elec., Japan*9Mitsubishi Elec., Japan*103D Consortium, Japan*11Toshiba Mobile Display, Japan*12YOSH Consultancy, Japan----- Break ----15:00 - 16:20

Room 502

3D6: 3D Display (2)Chair:
Co-Chair:T. Fujii, Tokyo Inst. of Tech., JapanT. Koike, Hitachi, Japan

3D6 - 1:
15:00

Invited Advantages of 3D Displays in Mobile Devices
T. Horikoshi
NTT DoCoMo, Japan

Small portable displays offer several advantages over large 3D-TVs.
This paper describes the mobile environment, and shows that portabledisplays well suit the realization of multi-view 3D service. A headtracking system is also introduced that can effectively widen thestereoscopic viewing space of portable 3D displays.

139

3D

The factors affecting image ﬂipping along different views in multiview autosrereoscopic displays were experimentally investigated. Our
results indicated that (i) overlapping images reduce image ﬂipping andalso image sharpness, (ii) those effects of overlapping images weakenwith larger number of views per IOD.

Friday
3D6 - 2
15:20

December 3
3D Viewing Experience in Mobile Contexts
M. Salmimaa, T. Jävenpää, M. Pölöen
Nokia Res. Ctr., Finland

User opinions on viewing angles and display size of handheld (auto)
stereoscopic display in different contexts were studied. The opticalcharacteristics of the display were determined. Results indicatedthat users preferred larger displays, especially with longer viewing
durations. The viewing freedom was thought to be appropriate for all
the contexts.
3D6 - 3
15:40

Effects of an Extra Diffuser between VZFO and
Display Panel in a Multiview 3-D Imaging Systems
J.-Y. Son, Y. Vaspanov*, M.-C. Park**, H. Lee, S. Yeon
Daegu Univ., Korea*Hanyang Univ., Korea**Korea Inst. of S&T, Korea

The crosstalk value changes by diffusers between VZFO and image
display panel are measured in the multiview 3-D imaging geometry.
The experiment informs that most diffusers can decrease moirésappearing in the system but increase crosstalk, however, a certain
diffuser can be used to reduce moirés without the crosstalk problem.
3D6 - 4
16:00

Multi-View Image Capture for Glasses Free Multiview 3D Displays
S. Gurbuz, S. Yano*, S. Iwasawa, H. Ando
NICT, Japan*NHK, Japan

In this paper, we provide an overview of our multi-view image capturesystem. More speciﬁcally, we propose scene content based novel
image alignment method for multi-camera image capture systems thatare necessary to achieve good 3D image quality.
Author Interviews
16:20 – 17:20

140

Wednesday

December 1

Workshop on
Applied Vision and Human Factors
Wednesday, December 1
13:20 - 14:50

Room 412

VHF1: Lightness Perception
Chair:
Co-Chair:Y. Shimodaira, Shizuoka Univ., Japan
T. Matsumoto, Sony, Japan

VHF1 - 1
13:20

Border Detection between Two Stimuli in Various
Surround Luminance Conditions
T. Ishikawa, T. Suzuki, T. Suzuki,T. Kawai*, O. Koyama*,
T. Eda**, M. Ayama
Utsunomiya Univ., Japan*Canon, Japan**Int. Univ. of Health & Welfare, Japan

VHF1 - 2
13:40

Informational Representation for Image Quality
Degradation Activating Accommodation Mechanism
in Subjective Evaluation Process
T. Matsui
Gunma Univ., Japan

We measure accommodative responses to three kinds of compound
drifting waves composed of drifting sine, square and missing
fundamental square waves with an infrared optometer, and clarify
which information representation (accommodative cue) for image
degradation, i.e., spatial frequency structures or spatial features,
activates the accommodation mechanism in subjective evaluation
process.
VHF1 - 3
14:00

Impact of Ambient Illumination Levels and Viewing
Angles to Perceptual Contrast Ratio of Display
W. Lv, H. Xu, M. R. Luo*
Zhejiang Univ., China*Univ. of Leeds, UKA visual experiment was performed to ﬁnd the just noticeable difference(JND) of lightness under different viewing conditions on an LCD
display. The impact of ambient illumination and viewing angles to theperceptual contrast ratio was revealed. The present results can be used
to verify and develop perceptual contrast models.
141

VHF

Border detection between two stimuli was investigated over awide range of reference luminance conditions for various surroundluminance levels. Results indicated that luminance contrasts for borderdetection exhibit a U-shaped curve against the reference luminance,
and are discussed in relation to physiological properties of humanvisual system.

Wednesday
VHF1 - 4L
14:20

December 1
Purity Discrimination for Spectrally Mixed Light in
the Mesopic Condition
Y. Ikegaya, G. Ohashi, Y. Shimodaira, Y. Shibata*,
H. Serizawa*
Univ. of Shizuoka, Japan*Koito Manufacturing, Japan

Purity discrimination on monochromatic light and mixed light wasstudied in the mesopic condition. With correction on luminance ratio ofpure color light of dominant wavelength to white light for colored light,
thresholds of purity discrimination for monochromatic light and mixed
light can be expressed in a uniﬁed manner.
VHF1 - 5L
14:35

Influence of Multi-colored Unevenness on White
Uniformity Evaluation of an LED Backlight
K. Nagamine, S. Tomioka, Y. Masakura**, T. Tamura*,
Y. Shimpuku
Sony, Japan*Tokyo Polytechnic Univ., Japan**Tokyo Univ. of Tech., JapanWe analyzed the relationship between viewer perception of the degreeof the white uniformity of an LED backlight and photometric datameasured by a 2D colorimeter and found that multi-colored unevenevaluation stimuli had a stronger inﬂuence on the results than similarlycolored uneven stimuli.
----- Break ----15:00 - 16:20

Room 412

VHF2: Color Perception
Chair:
Co-Chair:T. Matsumoto, Sony, JapanK. Masaoka, NHK, Japan

VHF2 - 1
15:00

Artificial Hue Adaptation: Novel Technique to Help
Easy Color Discrimination for Dichromatic Vision
Preserving Color Saturation
S. Ohtsuka, S. Suzuki, S. Oishi, S. Oka, S. Fukumoto
Kagoshima Univ., Japan

A novel technique for helping color vision deﬁciency is proposed.
The features of this technique are, (a) utilization of a pair of originaland hue-rotated color images, and (b) paired images enable color
vision deﬁciency observers to distinguish between both B-Y and R-G
opponent colors by alternating these images arbitrarily.

142

Wednesday
VHF2 - 2
15:20

December 1
KANSEI Evaluation of Color Images Corrected forColor Anomalies Assessed by Deuteranomalous
and Normal Observers
Y.-C. Chen, I. Takahashi**, Y. Guan, T. Ishikawa, H. Eto*,
T. Nakatsue*, J. Chao**, M. Ayama
Utsunomiya Univ., Japan*Sony, Japan**Chuo Univ., Japan

To investigate effectiveness of ʻcolor-weak correctionʼ to the KANSEI
evaluation for color deﬁcient observers, test images corrected with 5
levels of color-weakness were assessed by normal and anomalous
trichromat. In some images, corrected image showed the best
performance for deuteranomalous indicating the effectiveness of colorweak correction.
VHF2 - 3
15:40

Skin-Color Palette Applying to Visual Assessment
and Color Measurement of FPD
S.-H. Chen, H.-S. Chen, Y.-H. Chao, M. R. Luo*Nat. Taiwan Univ. of S&T, Taiwan*Univ. of Leeds, UK

VHF2 - 4
16:00

Low Color Gamut Application in Netbook andE-BookH. Zhang, L. Mao, J. Chen, S. Zhang, Y.-W. Chiu,
T.-C. Chung, T.-S. Jen
InfoVision Optoelect., China

A new concept of integrating low color gamut of the color ﬁlter (CF)with color engine (CE) technology to improve the performance of the
TFT LCD has been developed in this paper. An 11.6-in. module wasfabricated for evaluation. By using the photo resistance with special
speciﬁcations, it could achieve 33% NTSC standard with all the
thickness of R, G, and B photo resistance equal to 1.39 µm, andTransmittance increase 23%. The insufﬁciency of chromaticity issue
can be suppressed by color engine technology.
----- Break ----16:40 - 18:10

Room 412

VHF3: Color Reproduction
Chair:
Co-Chair:K. Masaoka, NHK, JapanT. Kurita, NICT, Japan

143

VHF

Visual assessment and physical color measurement methods havebeen widely used for evaluating color quality of Flat Panel Displays. In
this study, a color selection method is proposed including a skin-color
palette surrounding a reference image. The method is useful to analyze
skin color quality on displays.

Wednesday
VHF3 - 1:
16:40

December 1

Invited High-Fidelity, Wide-Gamut, High-Functionality
Color Imaging Technology: Natural Vision and Its
FutureM. Yamaguchi
Tokyo Inst. of Tech., Japan

This paper reports the image and video technology that breaks
through the limitation of RGB-based color, called Natural Vision,
which incorporates the multispectral and multiprimary color imaging
technologies for high-ﬁdelity, wide-gamut, high-functionality color
imaging and display.
VHF3 - 2
17:10

Is CIE Matching Mandatory for Color Accuracy
Using Filter Based Colorimeters?
P. Boher, T. Leroux, V. C. Patton
ELDIM, France

We demonstrate that CIE matching is mandatory to achieve good color
accuracy using a color ﬁlter system. When tristimulus calibration isapplied, CIE matching ensures excellent color stability even if spectral
ﬂuctuations take place. In addition, small deviations from the CIE
curves can be measured and used to improve color accuracy during
the measurements.
VHF3 - 3
17:30

Development of High-Reproduction Color Index and
Evaluation of Viewing Angle
T. Matsumoto, S. Haga, T. Nakatsue, H. Eto, Y. Akiyama
Sony, JapanWe developed a High-reproduction Color index (HR) to evaluate
the accuracy of color reproduction on TV and report viewing angle
measurement by using HR scores, which can evaluate color
reproduction performance not only by color shifts caused by off-centerviewing angles but also by the color reproduction in front view.
VHF3 - 4
17:50

Accurate Estimation Method of XYZ for Colors of
Images on an LCD
K. Ono, Y. Simodaira
Shizuoka Univ., JapanAn accurate estimation of tri-stimulus value of XYZ for colors of images
displayed on an LCD is proposed even if it doesnʼt satisfy the additive
color mixture. The method enables us to estimate XYZ with the averagecolor difference of less than unity.
Author Interviews
18:00 – 19:00

144

Thursday

December 2
Thursday, December 2

9:00 - 12:00

Poster/A.I. Room

Poster VHFp: Applied Vision and Human Factors
VHFp - 1

Boys and Girls Perceived Subjective Color
Reproduction in Global LCD Brands
W. Mphepö*,**, M. Wang**, J. Zhou**, D. Gao**, Z. Tang***Nat. Chiao Tung Univ., Sweden**Beijing 2nd High School Attached to Beijing Normal

Univ., China
What is the highest average subjective color reproduction capability
users in the largest market today can expect to get from some of
the major brands like Apple, Toshiba, HP, Sony, IBM/Lenovo etc?
The answer is no where near 100% and some barely break 50% in
important demographics.
VHFp - 2

Relationship of Legibility, Border Contrast in Colors
and Visual Fatigue
H.-Y. Hsiao, H.-S. Chen
Nat. Taiwan Univ. of S&T, Taiwan

VHFp - 3

Psychophysical Analysis of Paint Colors for Wide
Color Gamut Display
J. W. Jang, J. J. Yoo, H. Hong, H.-H. Shin
LG Display, Korea

A series of physical measurements and psychophysical experiments
using commercially available 1279 paint samples was performed inorder to visually conﬁrm the necessity of wide-gamut displays. Throughthe physical measurements, 3.8% of the samples were located outof BT.709 gamut. It was also 2.2% of the samples were visuallyperceivable.

145

VHF

4 experiments were designed on LCD monitors to explore therelationships of legibility, border contrast and visual fatigue. The result
hints adjacent color pairs in the combinations arenʼt recommended.
And using the stronger border contrast arenʼt suggested, which may
make text reading not smoothly, and bring visual fatigue easily.

Thursday
VHFp - 4

December 2
Measuring Method of Viewing Angle Range Using
Color Difference
Y. Fukai, K. Arata, N. Komine, T. Li, T. Arai, T. Igarashi,
Y. SanoToyo Univ., Japan

We propose measuring method of viewing angle range using color
difference. As a result of evaluation of image quality factors such as
maximum luminance, gamma value and others as well as conventional
contrast ratio, correlation of the color difference with subjective
evaluation turned out to be the highest.
VHFp - 5

Color Differences Formulae for High Dynamic
Range Projectors
P.-L. Sun, C.-P. Chueh, H.-S. Chen
Nat. Taiwan Univ. of S&T, Taiwan

CIE color-difference formula CIEDE2000 is important for image quality
assessment but it does not take background luminance level, dynamic
range, simultaneous contrast and crispening effect into account. The
study presents a color difference formula to deal with these factors forassessing color ﬁdelity of high dynamic range projectors.
VHFp - 6

Visually and Quantitatively Evaluating Rendering
Image Performance for Vertical Stripe RGB Pixelwith Various Repeated Units on the LCD
Y.-C. Wang, C.-R. Sheu
Nat. Cheng Kung Univ., Taiwan

We demonstrate the evaluation of rendering image performance withrespect to visual perception and numerical comparisons. Using FFTanalysis, it is easily observed the difference with various units. Three
typical repeated units with vertical stripe RGB sub-pixel are studied inthis paper, which are Stripe, Mosaic and Pentile1 repeated units.
VHFp - 7

Contrast Ratio Analysis for Back-Lit Dimming LCD
S.-Y. Pan, K.-C. Chang, C.-W. Chen, K.-S. Wang
AU Optronics, Taiwan

CR value will affect image quality, but may not be said that it is betterfor human perception with higher CR. The CR is dependent on
measurement methods. This paper will discuss the effectiveness ofdifferent CR measurement methods. And provide some comments onhuman perception sensitivity for CR index.

146

Thursday
VHFp - 8

December 2
Spot Mura Quantification Analysis for LED Edge-Lit
Display
H.-S. Ruan, S.-Y. Pan, C.-W. Chen, K.-S. Wang
AU Optronics, Taiwan

We use CCD camera system instead of human inspectorsʼ eyes tojudge the Spot Mura level for Edge-lit LED Backlight and furthermore
more objectively obtain an appreciate value. Therefore we develop asuitable analysis algorithm to quantify it by connecting CCD camera
system measurement values with human inspectorsʼ experience.
VHFp - 9

Robustness of Image Quality Factors in Different
Environment Illumination
S. Mori, G. Ohashi, Y. Shimodaira
Shizuoka Univ., Japan

The purpose of this study is to examine the robustness of image quality
factors in various environment illuminations using the parameter designin the ﬁeld of quality engineering. Experimental results showed thatimage quality factors are or are not liable to be inﬂuenced by various
environment illuminations.
VHFp - 10

Measurement of Cerebral Blood Flow Volume While
Viewing 2D and 3D Images
H. Isono

VHF

Nippon Inst. of Tech., Japan
We measured cerebral blood ﬂow volume while subjects viewed a 3D
image immediately after viewing a 2D image. The results indicatedthat cerebral blood ﬂow volume in the occipital lobe of the cerebrum islarger and there is greater brain activity while viewing 3D images thanwhile viewing 2D images.
VHFp - 11

Effects of Image Quality Attributes on Stereoscopic
3D TV
K. T. Kim, Y.-H. Kim, Y. G. Lee, Y. J. Kang, H. E. Kim,
G. H. Kim, C.-W. Kim
Inha Univ., Korea

In this paper, human visual experiments are performed to verify effects
of ﬁve image attributes on the stereoscopic 3D LCD TVs. Experimental
results indicate that degree of cross talk is one of the most importantfactors affecting the image quality on the stereoscopic 3D LCD TVs.

147

Thursday
VHFp - 12L

December 2
Accurate Color Conversion for Multi-primary
Displays with Three-primary Color Conversion andLinear Programming
M. Takaya, T. Mori, Y. Shimodaira*Numazu Nat. College of Tech., Japan*Shizuoka Univ., Japan

We propose a method to improve the accuracy of multi-primary-color
conversion, which is based on linear programming. Existing accurate
conversion methods for three-primaries and linear programming werecombined to reduce color difference caused by color-tracking. The
accuracy of the proposed method was 30 times higher than that oflinear programming.
VHFp - 13L

Color Conversion Method for Multi-Primary Display
to Reduce False Contours
T. Mori, M. Takaya, Y. Amano*, Y. Shimodaira*Numazu Nat. College of Tech., Japan*Shizuoka Univ., Japan

This paper proposes a color conversion method for a multi-primary
display to reduce false contours. Color conversion was adapted tomathematical programming. The color signals were obtained by SUMT
and Newton's method. As a result, false contours have been reducedwith a small color difference.
VHFp - 14L

Research on Acquiring Color Signal for High
Fidelity Color Camera
Y. Kandori, Y. Shimodaira
Shizuoka Univ., JapanOn a prototype camera intending to satisfy Luther condition, color
acquisition accuracy of less than unity is achieved when it adopts
a color conversion matrix of 3x4 with an invariable term under lightsources of D65, Cool White, Horizon, TL84 and A.
----- Lunch -----

148

Thursday

December 2

13:20 - 14:50

Room 412

VHF4/DES1: Multi Primary (1)Chair:
Co-Chair:K. Sekiya, Tohoku Univ., Japan
T. Matsumoto, Sony, Japan

VHF4/
DES1 - 1:
13:20

Invited Measuring Light and Color: An Introductory
Talk to Colorimetry
N. OhtaRochester Inst. of Tech., USA

Colorimetry is quantifying colors, that is, an art of expressing colors
by numbers. There are two classes of quantiﬁcation: color appearance
system and color mixing system. The gist of the two methods will be
introduced.
VHF4/
DES1 - 2
13:50

A New Evaluation Method of Color Reproductive
Performance and Evaluation of Multi-Primary Color
Display
M. Teragawa, T. Kanda, T. Fujine, M. Sugino,
Y. Miyanaga*
Sharp, Japan*Hokkaido Univ., Japan

VHF4/
DES1 - 3
14:10

Color Reproduction of Multi-Primary Color Display:
Numerical Analysis Method and Application to
Lower Power Consumption
T. Fujine, M. Teragawa, N. Ohta*
Sharp, Japan*Rochester Inst. of Tech., USA

We analyze color reproduction of multi primary color (MPC) display,and propose to calculate primary amount of color mixing for MPC in
minimum power consumption by linear programming. As an example,
we analyze characteristics of RGB+Y four primary color system incomparison with RGB system.

149

VHF

This paper proposed new evaluation of color reproductive performance,and evaluated MPC display. We used coverage ratio against object
color for evaluation of outer frame structure, and CDI for evaluation of
inner structure. We clariﬁed MPC display was suitable for expressing
object colors and had advantage of smooth color reproduction.

Thursday
VHF4/
DES1 - 4
14:30

December 2
A Numerical Evaluation across Multi-Primary Color
Systems
A. Yoshida, K. Yoshiyama, K. Tomizawa, K. Nakamura,Y. Yoshida, M. Teragawa, Y. Yamamoto*, N. Ohta**
Sharp, Japan*CIS Labs., Japan**Rochester Inst. of Tech., USA

We conducted a numerical analysis over several Multi-Primary Color(MPC) display systems consisting of RGB + Cyan primaries. We
compared the results with our previous results (RGB + Yellow and
RGB + White) for indicating characteristics of different MPC systems interms of luminance reproduction and power consumption.
----- Break ----15:00 - 16:20

Room 412

VHF5/DES2: Multi Primary (2)Chair:
Co-Chair:N. Ohta, Rochester Inst. of Tech., USA
T. Matsumoto, Sony, Japan

VHF5/
DES2 - 1:
15:00

Invited Four Primary Color (RGB+Y) Displays: The
Latest Technologies and Advantages
M. Teragawa
Sharp, Japan

This paper reviews the latest RGB+Y four primary color LCD
technologies and the advantages. RGB+Y LCD has advantages for
not only color reproducibility but also power consumption, in addition,higher resolution. RGB+Y LCD along with UV2A can make LCD-TV
improved in all ways.
VHF5/
DES2 - 2
15:40

High Resolution Reproducibility of Multi-Primary
Color Displays
K. Yoshiyama, H. Furukawa, N. Kondoh, S. Nakagawa,Y. Yoshida
Sharp, Japan

In this paper, we focus on high resolution characteristic of MultiPrimary Color (MPC) display, and show that horizontal resolution canbe approximately twice for stripe-patterned four-primary color display
by the combination with advanced sub pixel signal processing.

150

Thursday
VHF5/
DES2 - 3
16:00

December 2
Advanced RGBW Display Image Process Using
Sub-pixel Rendering
M.-C. A. Kao, P.-L. Hsieh, H.-T. Lin
Chunghwa Picture Tubes, Taiwan

A novel image process has been developed to transform RGB into
RGBW. It comprise the “RGBW mapping algorithm” is used to adjustcolor of image. And the “Virtual resolution scaling” is used to increase
the apparent resolution. And the “W signal controlling” is used toincrease sunlight readability.
----- Break ----16:40 - 18:00

Room 412

VHF6: Moving Image Quality and Backlight System
Chair:
Co-Chair:T. Kurita, NICT, JapanK. Masaoka, NHK, Japan

VHF6 - 1
16:40

Image Quality for Motion Pictures by Using EyeTracking Technology
Y.-Y. Chang, H.-S. Chen, R. M. Luo*Nat. Taiwan Univ. of S&T, Taiwan*Univ. of Leeds, UK

VHF6 - 2
17:00

Investigation of Color Breakup Measurement
Method Using a Moving Camera System
Y.-Y. Lai, K.-N. Wu, M.-L. Tai*
ITRI, Taiwan*Chunghwa Picture Tubes, Taiwan

Field-sequential display is an eco-friendly production but color-breakup(CBU) is the signiﬁcant problem. A novel CBU detects and analysis
technique using the moving camera and the image processing method
had proposed to evaluate the degree of CBU. This method could
present a useful index to recognize the CBU phenomenon.

151

VHF

The purpose of this study is to ﬁnd the relation between thepsychophysical quantities (i.e., colorfulness, naturalness, visual
comfort, preference, shadow / highlight detail) and image quality formotion pictures. Eye-tracking technology is introduced to collect thegazing areas which are attractive to the observers.

Thu./Fri.
VHF6 - 3
17:20

December 2/3
Study and Experiment of Color Breakup in a 6-in.
Color Sequential Display
C.-C. Tsai, S.-H. Yu, Y.-H. Cheng, W.-C. Tai
Chunghwa Picture Tubes, Taiwan

A 6-in. Color Sequential Display prototype has been developed.
Some solutions of reducing color breakup has been discussed andexperimented on the provided prototype. Color breakup has beenroughly speciﬁed into static one and dynamic one. The proposed
combination driving method can effectively reduce the color breakup.
VHF6 - 4
17:40

Effect of Backlight Dimming Methods on thePerceived Contrast of Complex Images
H.-I. Baek, J.-W. Kwon, S.-H. Kim, M.-J. Lim, H.-H. Shin
LG Display, Korea

Effect of different backlight dimming methods on the perceived contrast
of complex images on the LCDs was subjectively compared and agood dependency on the image types was found. In some extreme
cases, several times higher native contrast ratio was found to berequired to compensate the perceived contrast difference.
Author Interviews
18:00 – 19:00

Friday, December 3
9:00 - 10:15

Room 502

VHF7: Display Human Factors
Chair:
Co-Chair:T. Wake, Kanagawa Univ., Japan
S. Clippingdale, NHK, Japan

VHF7 - 1
9:00

Sociological Factors and LCD Subjective Image
Quality (SIQ)
W. Mphepö*,**, J. Bingrui**, L. Mi**, W. Yimeng***Nat. Chiao Tung Univ., Sweden**Beijing 2nd High School Attached to Beijing Normal

Univ., China
Do sociological factors - cultural & ethnic background, gender, age,education level etc. have impacts on LCD Subjective Image Quality[SIQ] perception? Experiment with 750 Chinese and Korean individuals
reveal sociological impacts of 40% or higher. And last but not least,
Apple displays are not always best.

152

Friday
VHF7 - 2
9:20

December 3
Secure Display with Head-Tracking Viewing Zone
H. Yamamoto, K. Kajimoto, S. Suyama
Univ. of Tokushima, Japan

We propose a new type of secure display that employs face-detection
with a camera. Optical encryption prevents eavesdropping of display
signal and limits the viewing zone three-dimensionally. The viewing
zone is moved to track the viewerʼs face. The experimental resultsshows the effectiveness of the proposed head-tracking secure display.
VHF7 - 3
9:40

Visual Cryptography on Color Video Displays
C.-H. Wen
Nat. Taiwan Univ. of S&T, Taiwan

Visual cryptography can encrypt the visual information by computerand decrypt the information via human eyes. This paper proposeda new scheme and decrypted the secret image by the way of video
sequence. By showing the encrypted images frame-by-frame in front ofvisual display terminal, the decrypted information is noticeable.
VHF7 - 4L
10:00

New HMI Solutions for Automotive Night Vision
Systems
P. Knoll
Karlsruhe Inst. of Tech., Germany----- Break ----10:40 - 12:10

Room 502

VHF8/3D4: 3D Human Factors
Chair:
Co-Chair:S. Clippingdale, NHK, Japan
H. Yamamoto, Univ. of Tokushima, Japan

VHF8/
3D4 - 1:
10:40

Invited Safety in 3D Broadcast, and Study in 3D
Channel Starting Service
Y. Imai, K. Imanishi, T. Okunaga
SKY Perfect JSAT, JapanSKY Perfect TV started broadcasting 3D channel from June 2010 andcarried out the test shooting and the examination for a safe and easyto-watch 3D broadcast. We studied the cause of fatigue and discomfort
in watching 3D image by using images of soccer game and that of awoman.

153

VHF

First and second generation Night Vision Enhancement Systems withimage presentation in the dashboard present a Camera-picture in thedashboard, in the center console area or on the windscreen. Resultsof ergonomic investigations with different HMI solutions are presented.
Conclusions for a possible third generation are made.

Friday
VHF8/
3D4 - 2
11:10

December 3
Evaluation of Viewability to Hyper-Realistic Picture
N. Suzuki*, S. Yano*,***NICT, Japan**NHK, Japan

This paper provides a subjective and objective evaluation of theviewability of hyper-realistic images. First, we examined the preferable
viewing distance for images of different sizes, including monoscopic
and stereoscopic images. Second, we measured the eye movementsof participants in a previous experiment comparing preferable with nonpreferable viewing distance.
VHF8/
3D4 - 3
11:30

Measurement of Accommodation and Vergence
Responses while Viewing Two-View and Multi-View
3D Displays
H. Mizushina, I. Negishi, H. Ando*, S. Masaki
Advanced TeleCommun. Res. Inst. Int., Japan*NICT, JapanWe
measuredaccommodation
andvergence
responses
simultaneously while viewing two-view 3D display based on polarized
glasses and multi-view 3D display based on parallax barrier. Difference
between two-view and multi-view conditions was observed in thevergence response, but not in the accommodation response.
VHF8/
3D4 - 4
11:50

Influence of Luminance Gradient on Three
Dimensional Perception for Real Object and Digital
Image
K. Iwauchi*,**, T. Takahashi**, T. Eda**, T. Ishikawa**,
M. Ayama***Sharp, Japan**Utsunomiya Univ., Japan

We investigated 3D perception using real objects and digital images.
The results indicate that the absolute luminance value of the brightest
area and the luminance gradient are the two most important factors
for 3D perception of real objects, whereas a degree of gradientenhancement is needed for digital images.
Author Interviews
16:20 – 17:20
Supporting Organizations:Technical Group on Information Display, ITE
Technical Committee on Electronic Information Displays, Electronics
Society, IEICE

154

Wednesday

December 1

Workshop on Projection and Large-Area
Displays and Their Components
Wednesday, December 1
13:20 - 16:20

Poster/A.I. Room

Poster PRJp: Projection
PRJp - 1

A LCoS Microdisplay with Low Voltage Driving
G.-J. Lee, J.-H. Kim, K.-J. Yang, H.-K. Lyu, Y.-H. Lee*,
H.-J. Chung*, B.-D. Choi
Daegu Gyeongbuk Inst. of S&T, Korea*Kumoh Nat. Inst. of Tech., Korea

A 0.28-in. SVGA LCoS panel with low power consumption was
proposed for portable applications. For low operation voltage, atransmission gate was used for pixel switch in the proposed pixel
structure so that any video signal within the power supply range can be
stored in pixel capacitor.
15:00 - 16:25

Room 402

PRJ1: Illumination Systems
Chair:
Co-Chair:K. Li, Wavien, USA
H. Nakano, Barco, Japan

PRJ1 - 1:
15:00

Invited Full HD 3D Projector with Dual Engine andSingle Projection Lens

LG Elect., Korea
The full HD 3D projector using passive polarization glasses has beendeveloped to give a brighter 3D image on screen for the user. The dual
engine and single projection lens system, the MHCM technology anddigital processing & auto calibration technology provide a high quality
3D image for the user.
PRJ1 - 2
15:25

Development of a High Brightness Dual-Lamp
Projector
A. Yamada, K. Kojima, H. Kida, K. Samejima, J. Someya,
H. Sugiura
Mitsubishi Elec., Japan

A projector has been developed that can display distinct pictures evenin spacious and bright places. Two lamps are provided in a unique
optical system to assure the brightness of 7,000 lumens and the highcontrast ratio of 2,000 to 1, which are both the highest in the class.

155

PRJ

S.-G. Lee, S.-O. Yeo, W.-W. Park, S.-Y. Park, S.-H. Park,
J.-W. Kim, J.-K. Lee, S.-H. Kim

Wed./Thu.
PRJ1 - 3
15:45

December 1/2
Increased LED Brightness with Recycling for
Projection Applications
K. Li
Wavien, USA

This paper describes different approaches using LED recycling toincrease the outputs at with separate recycled RGB LEDs for highpower, recycled white LEDs for medium power, and single packaged
RGB LEDs with recycling for low power. Gain ranges from 50% to over
100% have been achieved.
PRJ1 - 4L
16:05

Long Life Dual Paraboloid Reflector Lamp
Optimized for 3LCD and LCOS Projection Systems
K. Li
Wavien, USA

Dual Paraboloid Reﬂector (DPR) has been demonstrated to extend
lifetime of lamps by a factor of up to 5X. The DPR lamps have also
been used with tapered light pipes suitable for DLP projectors. In thispaper, a DPR system designed for used with 3LCD and LCOS system
is shown.
Author Interviews
18:00 – 19:00

Thursday, December 2
9:00 - 10:20

Room 409

PRJ2: New Projection Applications
Chair:
Co-Chair:B. Schowengerdt, Univ. of Washington, USA
H. Kikuchi, NHK, Japan

PRJ2 - 1
9:00

Monolithic Low Cost Plastic Light Guide for Full
Colour See-Through Personal Video Glasses
K. Sarayeddine, P. Benoit, G. Dubroca, X. Hugel
Optinvent, France

Low cost see-through personal video glasses technology for consumer
market was developed. Monolithic transparent plastic light guide withan array of small surface mirrors enables a bright image with a ﬁeld ofview of 27 degrees in an esthetic form factor.

156

Thursday
PRJ2 - 2
9:20

December 2
Projection Displays in Avionics
D. Cuypers, H. D. Smet*, X. Hugel**, G. Dubroca**,
A. V. Calster*
imec, Belgium*Ghent Univ., Belgium**Optinvent, France

Avionics represents a specialized area of display applications. A
possible future development in this ﬁeld is a single display cockpit
environment with touch input capabilities. Such a seamless, tiled
cockpit display based on short throw wide angle projectors isdeveloped in the European Project ODICIS. The current results are
discussed in this contribution.
PRJ2 - 3
9:40

Roll to Roll Patterned Film for Effective Low
Luminance Pico Projection Display Applications
W. Mphepö*,**,***, Z. Yiyi***, Y. Wei***, W. Yan***,Q. J. Feng****Nat. Chiao Tung Univ., Taiwan**Chalmers Univ. of Tech., Sweden***Beijing 2nd High School Attached to Beijing Normal

Univ., China
Tinted vehicle windows are for different uses among which areproviding privacy, reducing transmitted sun light in hot climates andfor aesthetics. The herein reported work was geared towards retaining
these traditional aspects of tinted vehicle windows while adding a newdisplay aspect component for custom display applications.
PRJ2 - 4L
10:00

H. Horiguchi, H. Yoshimoto, T. Yamada, K. Fukuhara,
L. Schreel*, J.-J. van den Bergh*, B. Dilles*, S. Sonoda*
Seiko Epson, Japan*Philips Innovative Applications N.V., Belgium
We developed a new light control system for 3LCD projectors. Thissystem continually optimizes both the lamp brightness according to theimage and the white balance deviations that occur due to lamp powerchanges. The system enhances contrast ratio by approximately ﬁvetimes and also realizes reduction of energy consumption.
----- Break -----

157

PRJ

A New Light Control System for 3LCD Projectors
Enabling Contrast Improvement with Enhancing
Energy Saving

Thursday

December 2

10:40 - 11:55

Room 409

PRJ3: Pico-Projectors
Chair:
Co-Chair:M. Niesten, Microvision, USA
T. Hayashi, 3M APAC, Japan

PRJ3 - 1:
10:40

Invited 1 mm x 7 mm Full-Color Pico Projector Using
Scanning Optical Fiber
B. T. Schowengerdt, R. S. Johnston, C. M. Lee,C. D. Melville, E. J. Seibel
Univ. of Washington, USA

We have developed a 1-mm x 7-mm light scanning engine, projecting
full-color images through a vibrating optical ﬁber tip and miniature lenssystem. The projection head and RGB light sources can be separated
and tethered together by any desired length of optical ﬁber, enabling
ﬂexible device conﬁgurations.
PRJ3 - 2:
11:05

Invited Pico Projector with Anamorphic Illumination
System
C.-K. Liu, C.-C. Liao, K. Wang, Y.-J. Chen*
Coretronic, Taiwan*Nat. Central Univ., Taiwan

The development of a RGB LED projection engine with anamorphic
illumination system is reported in this paper. Projector equipped withthis engine could produce more than 50 lumens with WVGA resolution.
The volume of optical engine and projector are 108 cc and 252 cc,
respectively.
PRJ3 - 3:
11:30

Invited Scanning Laser Beam Pico Projector
M. Niesten, T. Masood, J. Miller, S. Shinzawa
Microvision, USA

The smallest high resolution projector engine to date has beendeveloped for high volume manufacturing. This projector has a 720
resolution at a height of 7 mm and a volume of 5 cc. Future scanninglaser beam projectors will be even smaller.
PRJ3 - 4

Withdrawn----- Lunch -----

158

Thursday

December 2

14:50 - 16:25

Room 409

PRJ4: Laser Projection and Despeckling Technologies
Chair:
Co-Chair:H. Kanayama, Sanyo Elec., Japan
T. Suzuki, JVC KENWOOD Holdings, Japan

PRJ4 - 1:
14:50

Invited The Evolution and Trends of Laser Projection
Displays
S. Shikama
Setsunan Univ., JapanThe laser was ﬁrst demonstrated just half-century ago (1960).
Research and development of laser projection displays had beenreported from the early stage of the laser history. In this paper,
evolution and trends of laser projection displays are presented
including the key issues; optical systems and components, speckle
noise reduction.
PRJ4 - 2:
15:15

Invited Development of Wide Scan Angle and HighSpeed Optical Scanning Devices
J.-H. Park, J. Akedo
AIST, Japan

Metal-based optical MEMS scanning devices employed an AISToriginal MEMS driving method, Lamb wave resonance piezoelectric
driving method. It achieved large optical scan angles of 100 or greaterat high scanning speeds (over 25 kHz) and low driving voltages (20 V),
those are required to be used in practical projection displays.
Invited A Despeckler Based on a Single FLC Cell
I. Kompanets, A. Andreev

PRJ

PRJ4 - 3:
15:40

Lebedev Physical Inst., Russia
The speckle-noise in images displayed by the laser projection system
is suppressed in real time when a laser beam passes through a single
FLC cell where spatially inhomogeneous phase light modulation takes
place due to special FLC material and electric pulse regime.
PRJ4 - 4
16:05

Despeckling Method with Variable Speckle
Generator Utilizing Photopolymer Film
K. Ishida, M. Kurashige, T. Takanokura, Y. Ohyagi,
M. Watanabe
Dai Nippon Printing, Japan

Removing laser speckle which generates on a screen is importantin laser projection. In this paper, different speckle patterns aresuperimposed continuously by giving small movement or changing
direction of light to volume phase holographic beam shaper utilizing
photopolymer ﬁlm, which makes speckle invisible. Speckle contrast of
0.03 is achieved.
----- Break ----159

Thursday

December 2

16:35 - 18:00

Room 409

PRJ5: Digital Signage and Large Venue Projectors
Chair:
Co-Chair:M. D. Perkins, Christie Digital Syss. Canada, Canada
S. Shikama, Setsunan Univ., Japan

PRJ5 - 1:
16:35

Invited Micro Tiles - An Expandable Flexible Tiled
Display System
M. D. Perkins
Christie Digital Syss. Canada, Canada

MicroTiles is a video display system that can be used to create large
displays out of an array of small, modular units. The architecture is
described along with how it meets the needs of Digital Out-Of-Home
applications. Primary goals of this system are ﬂexibility, resolution, andease of installation.
PRJ5 - 2
17:00

Multiple Directional Viewing Projection Display
Based on the Incident-Angle-Independent Diffusion
Angle Quantizing Technology
T. Kawakami, B. Katagiri, T. Ishinabe, T. Uchida*
Tohoku Univ., Japan*Sendai Nat. College of Tech., Japan

We have devised an incident-angle-independent, quantized-diffusionangle screen and have realized a multiple directional viewing projection
display system using double-side lenticular lens. Our display system
has advantages of easy alignment for multiple projectors, andcapability of multiple different images simultaneously according toviewing angle at any distance from the screen.
PRJ5 - 3
17:20

High Resolution Projection Systems with HighDynamic Range Capabilities
B. Maximus, P. Candry, H. Nakano*
Barco Simulation, Belgium*Barco Tokyo, Japan

This paper focuses on an important aspect of the development of highdynamic range capabilities on high resolution LCOS projection systems
for Simulation applications, namely the bitdepth which is required fromthe input of the projector up to the reproduction of the image.
PRJ5 - 4
17:40

Adaptive Brightness and Color Conversion
Projection System by Color Tuning Optical Engine
M. Maeda, K. Arai, M. Haraguchi, T. Abe, S. Tanase,
K. Mashitani, M. Inoue, H. Kanayama
Sanyo Elec., JapanThe newly developed projection system realizes adaptive combinationof high brightness and wide color gamut. This projector features afourth liquid crystal panel, “Color Tuner”, with 3LCD optical engine,which controls yellow-light separately from RGB lights of UHP lamp.
160

Thursday

December 2

Author Interviews
18:00 – 19:00

Supporting Organizations:Technical Group on Information Display, ITE
Laser Display Technology Research Group, Optical Society of JapanBANQUET
PRJ

Wednesday, December 1, 2010
19:30 – 21:30
Crowne Grand Ball Room (2F)ANA Crowne Plaza Fukuoka
See page 9 for details

EXHIBITION
12:00 – 18:00 Wednesday, Dec. 1, 2010
10:00 – 18:00 Thursday, Dec. 2, 2010
10:00 – 14:00 Friday, Dec. 3, 2010
2F Lobby, 4F Lobby
Fukuoka International Congress CenterFree admission with your registration name tag161

Wednesday

December 1

Workshop on Electronic Paper
Wednesday, December 1
13:20 - 16:20

Poster/A.I. Room

Poster EPp: Electronic Paper
EPp - 1High Performance and Colorful Active Matrix
Electrophoretic Display
C.-M. Lu, M.-C. Weng, Y.-C. Chen, H.-H. Chen,
W.-T. Tseng, H.-T. Yu
Chunghwa Picture Tubes, Taiwan

CPT has successfully developed the 6-in. colorful AMEPD panel ofthe micro-capsule with the color ﬁlter. The colorful EPD technology isnecessary because the market demand of the colorful E-book is sostrong. Therefore, we present a full-color display with the color ﬁlter
covered on the 6-in. AMEPD panel.
EPp - 2

Realization of Vivid Image Projection in a Bright
Room Using Electronic Paper Screen
T. Kinjo, M. Omodani, T. Yoshida*
Tokai Univ., Japan*Freelance Profession, Japan

We have suggested a new projection system which can realize highcontrast image projection in a bright room. It is consisted of electronic
paper screen, LED projector and LED room light. We have conﬁrmedthat twice higher contrast than the conventional projection system isachieved by our new system in a bright room environment.
EPp - 3Behavior of Image Sticking in Bistable Display
Using Cholesteric LC
M. Fukuda, Y. Kurosaki, M. Nose, T. Watanuki
Fujitsu Labs., Japan

Image sticking, which refers to the slight difference in brightness dueto the previous image remaining, is a serious problem with bistabledisplays using cholesteric liquid crystals. Image sticking occurs after
the electric ﬁeld is removed, so it is greatly affected by the surface
condition of the electrode.

162

Wednesday
EPp - 4

December 1
A High-Efficiency and Crosstalk-Free Pen Tracking
Scheme for Passive Matrix Single-Layered Color
Cholesteric LCD
Y.-S. Chang, C.-C. Hsu, C.-J. Chen, C.-C. Liang,
C.-C. Wu, C.-H. Wu, C.-Y. Chen
ITRI, Taiwan

A high-efﬁciency and crosstalk-free pen tracking scheme is proposed
for high performance handwriting on low-cost passive-matrix (PM)cholesteric LCDs. With the proposed scheme, the crosstalk issue canbe overcome and the handwritten paths are locally reinforced for highimage quality. Furthermore, pixels are updated in-parallel for highhandwriting speed.
EPp - 5

Driving Method of Choleristic LC and Its
Applications
P.-H. Chiu, S.-F. Liu, S. Chen, C.-Y. Shen, H.-A. Li
Chunghwa Picture Tubes, Taiwan

This paper applies less than 30 V voltage to drive cholesteric liquid
crystal, and get different optical performances by different driving
schemes. We could apply these characteristics to different applications,like monochrome content with quicker page turn speed, while color
content with slower one.
EPp - 6

A Development of Color-Filter-Free Electrowetting
Color Display by Using Ink Jet Printing Technology
S.-W. Kuo, K.-L. Lo, W.-Y. Cheng, Y.-S. Ku, H.-H. Lee,
Y.-H. Tsai, P.-P. Cheng, J.-W. Shiu, C.-Y. Chen*,
Y.-S. Huan*
ITRI, Taiwan*Nat. Chiao Tung Univ., Taiwan

EPp - 7L

New Bistable Mode of Electrowetting Light Valve
I.-C. Hsieh, Y.-J. Li, H.-H. Huang*Nat. Chung Hsing Univ., Taiwan*D & Y Intelligent, Taiwan

In this study, a new electrowetting mode is embedded in a light valve
structure pixel which the surface tension is moderated on junction ofwater/oil system. The tested panel demonstrated that bistable behaviorof the oil extraction/spread motion by different driving methods.

163

EP

We evaluated the single layer EWD device by using various coloredoils without adopting color ﬁlter. The color mediums were various
colored oil that dosed into sub-pixels by ink jet printing technology.
Simulation was also utilized to analyze the phenomenon of unstable
ﬂuid movement.

Wednesday
EPp - 8L

December 1
A 3.5-in. Transflective Color Active Matrix
Electrowetting Display
C.-Y. Chen, C.-Y. Wang, S.-J. Chang, H.-Y. Chang,
C.-Y. Chou, W.-T. Liao, W.-C. Wang
Wintek, Taiwan

In this paper, we proposed the panel design, fabrication processes andoptical performances of a 3.5-in. transﬂective AMEWD. Accompany
with the dipping process to dose the black oil into the pixels on the
COA substrate, the color AMEWD could become more simple, feasible
and scalable.
EPp - 9L

Novel High Contrast Bistable Reversed-TN-LCD for
Electronic Paper
R. Takahashi, Y. Toko*, S. Saito, T. Takahashi
Graduate School of Kogakuin Univ., Japan*Stanley Elec., JapanA reﬂective type of Reversed (R) TN-LCD with the bistable switching
was developed. The switching between the R-TN state and the splaytwist state is done by changing the direction of applied electric ﬁeld.
Optimizations of cell parameters are done to achieve the high contrast
reﬂection type of the bistable R-TN-LCD.
----- Break ----16:40 - 18:00

Room 204

FLX3/EP1: Flexible Electronic Paper
Chair:
Co-Chair:Y. Masuda, Bridgestone, Japan
H. Fujikake, NHK, Japan

FLX3/
EP1 - 1
16:40

Large Area and High Precision Organic TFT Array of
A4 Size with 200 ppi on Plastic Substrateby Microcontact Printing Technique
K. YaseAIST, Japan

We have succeeded in driving a high resolution polymer network liquid
crystal display (PNLCD) by using OTFT array obtained by microcontact
printing (µCP) method. By optimizing the fabrication condition, 200 ppi
with the pixel size of 125 µm on A4 size plastic substrate was achieved.

164

Wednesday
FLX3/
EP1 - 2
17:00

December 1
Development of Flexible Electronic Paper
with Transparent Polymer Electrodes Preparedthrough Directly Printing Approach
M. Nishii, Y. Iwabuchi, H. Kotsubo, R. Sakurai,
Y. Masuda, R. Hattori*
Bridgestone, Japan*Kyushu Univ., Japan

A 4.0-in. diagonal and 88 dpi ﬂexible electronic paper with line-shaped
electrodes composed of transparent conductive polymer of PEDOT/
PSS was prepared and passive matrix images were successfully
displayed. The line-shaped electrodes of the conductive polymer weredirectly formed onto the ﬂexible PET substrate by using screen printing
method.
FLX3/
EP1 - 3
17:20

Flexible Color Ch-LC E-Papers
S.-C. Chen, H.-Y. Chen, C.-C. Liang, C.-L. Chin,
C.-W. Chen, J.-Y. Su
ITRI, Taiwan

This paper proposes ﬂexible color Ch-LC e-papers. By adding
photochiral dopant, single substrate ﬂexible Ch-LCD becomes sensitive
to UV light. Therefore, UV exposure can cause the discontinuouschange in the helical pitch of the Ch-LC pixels to locally colorize thee-paper. After being colorized, the color e-paper can be electricallydriven to update the displayed content. In this paper, the 50 dpi color
R2R Ch-LC e-paper is implemented.
FLX3/
EP1 - 4
17:40

Preliminary Evaluation of LED Photo-Addressing
on ChLCD Electronic Paper
W.-J. Li, C.-J. Li, M.-Y. Lu, B.-W. Xiao, T.-T. Chang,
K.-J. Hu
ITRI, Taiwan

Author Interviews
18:00 – 19:00

165

EP

We have done a preliminary work on photo-addressing method for
Chlcd electronic paper with auxiliary LED light source. The Chlcd
electronic paper could be written more efﬁciently by controlling highluminous intensity LED appropriately. Finally we have realized theprototype of the photo-addressable electronic paper with LED light pen.

Thursday

December 2
Thursday, December 2

9:00 - 9:05

Main Hall

Opening
Opening Remarks
9:00
A. Suzuki, Ricoh, Japan
9:05 - 10:15

Main Hall

EP2: Electrophoretic Displays
Chair:
Co-Chair:T. Kitamura, Chiba Univ., JapanY. Hotta, Ricoh, Japan

EP2 - 1:
9:05

Invited Color Quality Improvement in Active Matrix
Electrophoretic Display
N.-S. Roh, T. Hwang, S. Kwon, W. Lee, S. Kim, S. Lim
Samsung Elect., Korea

E-Reader using E Ink technology is limited on black and white
contents, so colorization of e-paper is eagerly awaited to expand themarket. In this paper, we will discuss about color of reﬂective display,comparing with printed paper and what is the key factor to increase theperformance.
EP2 - 2:
9:30

Invited Advanced Technology in Electrophoretic
Display
Y.-I. Park, S.-H. Paek, O.-N. Kwon, C.-H. Park,
C.-D. Kim, Y.-K. Hwang, I.-J. Chung
LG Display, Korea

We have developed and demonstrated B5-sized color ﬂexible
electrophoretic display and world largest A3-sized ﬂexible
electrophoretic display using E-ink micro-encapsulated technology.
These EPD displays give us wider applications because of color image
and large screen as well as ﬂexibility and paper-like look And we
also achieved large ﬂexible electrophoretic display for its application
extension to e-newspaper and digital signage.

166

Thursday
EP2 - 3
9:55

December 2
Understanding Electrophoretic Displays: Transient
Current Characteristics of Dispersed Charges in a
Non-Polar Medium
Y. Jeon, P. Kornilovitch, P. Beck, Z.-L. Zhou, R. Henze,
T. KochHewlett-Packard, USA

Transient currents of reverse micelles in a non-polar solvent fromvoltage step stimuli were studied to investigate the electrophoretic
behavior of the charges. It showed various time-dependent transientsdepending on the applied voltage and the charge content. A onedimensional drift-diffusion model could reproduce the behaviors forvarious conditions.
----- Break ----10:40 - 11:55

Main Hall

EP3: Color Electrophoretic Displays
Chair:
Co-Chair:M. Omodani, Tokai Univ., Japan
M. Tsuchiya, E Ink, Japan

EP3 - 1:
10:40

Invited Reflective Electronic Media with Print-LikeColor
T. Koch, J.-S. Yeo, B. Benson, J. Mabeck,R. Hoffman, V. Korthuis, Z.-L. Zhou, D. Hentz
Hewlett-Packard, USA

A novel architecture and proprietary electrically addressable inks
have been developed to provide print-like full color reﬂective digital
media. The thin, ﬂexible, low-power media is fabricated with a roll-toroll manufacturing platform, and it is integrated with a multi-component
oxide (MCO) thin-ﬁlm transistor backplane to produce active matrix
reﬂective electronic display.
Invited Zero-Energy E-Skin
K.-M. H. Lenssen, L. W. G. Stofmeel,
M. H. W. M. van Delden, R. J. M. Vullers*, H. J. Visser*,
V. Pop*Philips Res. Labs., the Netherlands*imec, the Netherlands
Bright e-Skin technology makes “green” applications possible, like ecoskin and smart windows. Another “green” aspect is the ultra-low power
consumption, which enables “zero-energy” e-Skin, i.e. devices that do
not need a battery or connection to an external electrical power supply.
As examples, solar-powered and RF-powered e-Skin are presented.

167

EP

EP3 - 2:
11:05

Thursday
EP3 - 3:
11:30

December 2
Invited Electro-Osmosis: The Key to In-Plane
Electrophoretic Displays
A. Henzen, J. Groenewold*
IRX Innovations, the Netherlands*Denkwerk, the Netherlands

Electrophoretic displays require encapsulation to prevent particle drift.
Also, in-plane electrophoresis requires extreme accuracy in driving andpixel layout to provide homogeneous imaging. This new method solves
both problems.
----- Lunch ----13:20 - 14:25

Main Hall

EP4: Frontier Research for e-Paper
Chair:
Co-Chair:S. Maeda, Tokai Univ., Japan
M. Higuchi, NIMS, Japan

EP4 - 1:
13:20

Invited Human Interface Aspects for Realizing
Readable Electronic Paper
M. Omodani
Tokai Univ., Japan

We must be able to obtain useful guidelines for e-Paper if we ﬁnd clear
answers for the primitive question why we generally prefer readingon paper than on electronic displays. Several experiments have been
performed to extract essential difference between paper and displays
from various aspects; readability, fatigue, and efﬁciency.
EP4 - 2
13:45

Novel Display Device with Dual Emissive andReflective Modes by Using Luminescent
Lanthanide(III) Complexes and Electrochromic
Materials
K. Nakamura, K. Kanazawa, N. Kobayashi
Chiba Univ., Japan

A novel display device with dual emissive and reﬂective display modeis demonstrated. The device consists of luminescent lanthanide(III)complexes (photo- luminescence materials) and an electrochromic
material. The device functions as an electrochromic device when bias
voltages are applied and as a light-emitting device if excitation lights
are irradiated.

168

Thursday

December 2

EP4 - 3
14:05

Novel Imaging Device with Reflective and Emissive
Mode Driven by Electrochemical Reaction
Y. Watanabe, K. Nakamura, N. Kobayashi
Chiba Univ., JapanWe
successfully
demonstrated
novel
imagingcell
with
reﬂective and emissive mode driven by electrochromic andelectrochemiluminescence reactions. This dual-mode cell has simple
structure and driving feature which reﬂective and emissive mode canbe controlled by selecting DC and AC driving method, respectively.
----- Break ----15:00 -16:30

Main Hall

EP5: Electrochromic Displays
Chair:
Co-Chair:N.-S. Roh, Samsung Elect., Korea
Y. Toko, Stanley Elec., Japan

EP5 - 1:
15:00

Invited Electrochromic Display Using OrganicMetallic Hybrid Polymers
M. Higuchi*,***NIMS., Japan**Japan S&T Agency, JapanTo achieve the next generation display that contributes to energy
conservation and the saving resource, we created organic-metallic
hybrid polymers as new electrochromic material in which multi-colors
are expressible and fabricated solid-state electrochromic devices using
them. The device properties are introduced in my presentation.
EP5 - 2:
15:25

Invited Development of Color Electrochromic
Displays Based on Thin Film Transistor
Y. W. Jin, C. H. Noh, J. W. Kim, D. S. Chung, Y. J. Yi,
S. J. Jeon, R. R. Das, M. H. Jung, S. Y. Lee
Samsung Elect., Korea

169

EP

We
have
developed
activematrixcolor
electrochromic
displays(AMECD) based on a-Si TFTs backplane For the highresolution(100 ppi) and gray scalable(16 levels) display, cross-talk freestructure and a unique process to deposit selectively titanium dioxideon each pixel electrode were presented.

Thursday
EP5 - 3
15:50

December 2High Performance Electronic Paper Utilizing Leuco
Dye
W. Weng, T. Fukuoka, S. Kihara, T. Higuchi, M. Suzuki,
T. Shimomura, M. Ono, M. Omodani*
Funai Elec. Advanced Appl. Tech. Res. Inst., Japan*Tokai Univ., Japan

We have developed a QVGA electrochromic display of 16 gray scalewith 300 µm pixels by using leuco dye. Improving electric scanning
procedures and the structure of the device, we attained clear imagesof 150 µm pixels with eliminated cross talk and the weaker image
ﬂickering.
EP5 - 4
16:10

Printed/Coated Electrochromic Non-Volatile
Displays with Dispersible Prussian Blue
Nanoparticles
T. Kawamoto*, H. Tanaka*, M. Kurihara*,**,
M. Sakamoto*,**, T. Kiyoshi*,***, Y. Taguchi****AIST, Japan**Yamagata Univ., Japan***Alps Elec., Japan

By printing/coating electrochromic nanoparticles, we developed new
non-volatile displays: a simple display that is switchable between
two patterns, and a pixel device that is switchable between blue andwhite. The devices can work only by application of ca. 1 V. Using thetechnologies, a pattern-switchable keyboard was fabricated.
----- Break ----16:40 - 18:00

Main Hall

EP6: Cholesteric LCDs
Chair:
Co-Chair:H. Arisawa, Fuji Xerox, JapanT. Fujisawa, DIC, Japan

EP6 - 1
16:40

Driving Scheme of Color E-Paper Using Ch-LC for
High Image Quality
M. Nose, H. Uehara, T. Shingai
Fujitsu Labs., Japan

An improved driving scheme of color electronic paper using cholestericliquid crystals for high image quality has been developed. The key
factors were a contrast ratio and highlights uniformity. The achieved
contrast ratio was 8.8 that was higher than newspapers, with 262,000
colors by using 2 different electro-optic responses.

170

Thursday
EP6 - 2
17:00

December 2
Fast Driving Scheme for Color Ch-LCD
H. Uehara, M. Nose, T. Shingai
Fujitsu Labs., JapanWe developed e-paper based on cholesteric liquid crystals, capable offast re-write (0.7 seconds) with a high contrast ratio (6.9). Adopting a
modiﬁed DDS from the high-speed driving method where grayscale ishard to control, the e-paper with a new grayscale control techniquesachieves XGA resolution with 64 colors.
EP6 - 3
17:20

Spot Color Encapsulated Cholesteric LCD
C.-W. Chen, W.-W. Chiu, C.-Y. Wang, P.-W. Liu,
K.-W. Lan, C.-Y. Wu
ITRI, Taiwan

In this paper, the fabrication of high reﬂectivity and low driving voltage
encapsulated cholesteric liquid crystal display (En-ChLCD) for
E-signage application was demonstrated. The performance of 22%
reﬂectivity and 80 V driving voltage were achieved by optimized sheet
to sheet coating manufacture process, respectively.
EP6 - 4
17:40

Large Scale Bistable Cholesteric LCD with Thermal
Addressing
C.-Y. Wang, C.-C. Tsai, W.-H. Huang, P.-W. Liu
ITRI, Taiwan

In this study we developed a 3-bit gray scale thermal-addressing writerwhich is able to refresh the image of 28 centimeters wide and 3 meters
long cholesteric liquid crystal display in 3.5 minutes. To render color,a single-layer color Ch-LC display was developed for color thermaladdressing.
Author Interviews
18:00 – 19:00

EP

IDW Tutorial in Japanese
Tuesday, November 30, 2010
Room 412
Fukuoka International Congress Center
Detailed information is announced at
http://www.sidchapters.org/japan/
171

Friday

December 3
Friday, December 3

9:00 - 10:25

Main Hall

EP7: Electrowetting and LCDs
Chair:
Co-Chair:A. Suzuki, Ricoh, Japan
G. F. Zhou, Philips Res., the Netherland

EP7 - 1:
9:00

Invited "No Power" (Green) Electrowetting Displaysfor Indicators as LED Replacement
K. Blankenbach, F. Bartels*, J. Rawert**, D. Jerosch**Pforzheim Univ., Germany*Bartels Mikrotechnik, Germany**ADT, Germany

High reﬂectivity and transmissive backlight mode are advantagesof electrowetting displays; ADTʼs approach is the only bistable one.
This paper deals with LED replacements for energy-saving systems.
Achievements are fully compatible integration into LED housings,
superior optical performance of electrowetting indicators in bright lightcompared to LEDs and “in-cell” touch.
EP7 - 2:
9:25

Invited Electrofluidic Displays – First Prototypes, A
New Bistable Architecture, and ‘Perfect’ Segmented
Electronic Paper
J. Heikenfeld*,**, S. Yang*, E. Kreit*, M. Hagedon*,K. Dean**, K. Zhou**, S. Smith**, B. Brollier**,J. Rudolph***Univ. of Cincinnati, USA**Gamma Dynamics, USA

Electroﬂuidic displays transpose brilliant pigment dispersions between
a ﬂuid reservoir of small viewable area and a channel of large viewablearea. We report recent prototyping progress for the technology, a new
multi-stable device architecture, and a novel approach for segmented
displays that can display pigment without the optical losses of pixel
borders.
EP7 - 3
9:50

Three-Terminal Bistable Splay Twist LCD
C. Y. Lee, M. C. Tseng, H. S. Kwok
Hong Kong Univ. of S&T, Hong Kong

A bistable splay-twist LCD is proposed and demonstrated. Such abistable display consists of two stable states, splay and pi-twisted
states. Switching is achieved by using three-terminal electrodes.
Optimizations of the optics and electrodes have also been performed.
The display is permanent bistable and is suitable for electronic paper
applications.

172

Friday
EP7 - 4L
10:10

December 3
Novel Development of AM Electrowetting Display
with Color Filter on TFT-Array
H.-H. Lee, S.-W. Kuo, K.-L. Lo, W.-Y. Cheng, P.-P. Cheng,
Y.-H. Tsai, Y.-S. Ku, J.-L. Chen, J.-W. Shiu, C.-Y. Wang*,
C.-Y. Chen*, S.-J. Chang*, C.-Y. Chou*, H.-Y. Chang*,
W.-T. Liao*, W.-C. Wang*
ITRI, Taiwan*Wintek, Taiwan

An active matrix electrowetting display had been developed by using
color ﬁlter on TFT-array. We adopted the black matrix and black oil with
optical density of 1.2 to improve the optical performance. Due to thepolarizer-free structure, this panel could be read easily with low-power
backlight compared with traditional LCD.
Author Interviews
16:20 – 17:20

Supporting Organization:
The Imaging Society of JapanBANQUET
Wednesday, December 1, 2010
19:30 – 21:30
Crowne Grand Ball Room (2F)ANA Crowne Plaza Fukuoka
See page 9 for details
EP

Evening Get-Together
with Wine
Tuesday, November 30, 2010
18:00 – 20:00
at RACONTER (1F),
Fukuoka International Congress Center(Sponsored by Merck Ltd., Japan)
See page 9 for details
173

Thursday

December 2

Workshop on MEMS and Emerging
Technologies for Future Displays and Devices
9:00 - 9:05

Room 402

Opening
Opening Remarks
9:00
M. Nakamoto, Shizuoka Univ., Japan

Thursday, December 2
9:05 - 10:25

Room 402

MEET1: Emerging Technologies
Chair:
Co-Chair:K. Sato, Nagoya Univ., Japan
M. Takamiya, Univ. of Tokyo, JapanMEET1 - 1: Invited Optimisation of CNTs and CNT/ZnO
9:05
Nanostructures for Use as Electron Sources
W. I. Milne*,**, M. Mann*, Y. Zhang*, D. Hasko*, C. Li**Univ. of Cambridge, UK**Kyung Hee Univ., Korea

The aim of this paper is to describe the growth and optimization ofballasted carbon nanotube (CNT) and CNT/Zinc Oxide nanostructuresto produce novel electron sources for use in lighting and x-ray
applications.
MEET1 - 2: Invited Fabrication and Field Emission Properties of
9:30
Vertically Aligned Carbon Nanotubes
Y. Bonnassieux, C. S. Cojucaru, A. Dhar, P. Legagneux*
Ecole Polytech., France*Thales Res. & Tech., France
We present some comparisons concerning ﬁeld emission from two
types of nanostructures, multiwall carbon nanotubes grown by plasma
enhanced CVD and metal nanowires grown by electrochemical
deposition. Various treatments with simple and low-cost processes arepresented in order to decrease the growth temperature and to improvethe emitted current uniformity.

174

Thursday
MEET1 - 3
9:55

December 2
Enhanced Electron Emission Property of Carbon
Nanotube Grown with High Temperature
A. N. Ha, J. H. Ryu, H. M. Oh, N. Y. Bae, E. H. Lee,W. M. Bae, J. Jang, K. C. Park
Kyung Hee Univ., Korea

MEET1 - 4
10:10

Suppress Speckle in Line Scan Display System by
Binary Code
W. Gao*,**, M. N. Akram*, G. Ouyang*, Z. Tong*, X. Chen**Vestfold Univ. College, Norway**Beijing Inst. of Tech., China

A set of 2D binary codes are created, phase plates are fabricated byetched glass according to the code. It is introduced in laser based line
scan display system to reduce speckle. According to experiment, thephase plate with the code of order 5 successfully reduces speckle
contrast to 17.5%.
----- Break ----10:40 - 12:15

Room 402

MEET2: Fundamental Components, Process Technologies (1)Chair:
Co-Chair:W. Milne, Univ. of Cambridge, UK
T. Yatsui , Univ. of Tokyo, Japan

MEET2 - 1: Invited Extension of 3D Microstructures on Silicon
10:40
Wafer Realized by Wet Etching
K. Sato
Nagoya Univ., Japan
Advanced bulk micromachining using aqueous tetramethylammoniumhydroxide (TMAH) solutions with and without a surfactant Triton X-100[C14H22O(C2H4O)n, n = 9-10] is developed in order to extend the rangeof MEMS structures. A wide range of advanced ﬁxed and freestanding
microstructures are fabricated.

175

MEET

A electron emission property of carbon nanotube (CNT) emitter grownwith high temperature condition is studied. CNTs were grown on Si
wafer with different temperature conditions. The electron emission
current was enhanced with high growth temperature. The effect ofhigh growth temperature on electron emission properties of CNTs wasinvestigated.

Thursday

December 2

MEET2 - 2: Invited Large Area Electronics with Organic
11:05
Transistors and Novel Interconnects: EMI
Measurement Sheet with Stretchable Interconnects
and User Customizable Logic Paper (UCLP) with
Ink-Jet Printed Interconnects
M. Takamiya, K. Ishida, T. Sekitani, Z. Ute*, H. Klauk*,
T. Someya, T. Sakurai
Univ. of Tokyo, Japan*Max Planck Inst. for Solid-State Res., Germany

Large area electronics, which takes advantage of the ﬂexibility andthe low cost per area, is a good application of the organic FETs. In
this paper, some examples of large area electronics using organic
transistors including an EMI measurement sheet and a User
Customizable Logic Paper (UCLP) are shown.
MEET2 - 3: Invited Nonlinear Spring of Thin Film Torsion Bar
11:30
with Tension for Micromirror
S. Ogawa, S. Kumagai, M. Sasaki
Toyota Tech. Inst., Japan
Nonlinear spring gives the wider balancing region against theelectrostatic actuator. The thin ﬁlm torsion bar with tension shows thelarge hard-spring effect. Its displacements are accurately measured
using the white-light interferometer. Explanation based on the tension
and the vertical shift gives reasonable agreement with the frequencychange.
MEET2 - 4L Spherically Curved Guest-Host Display for Use in a
11:55
Contact Lens
J. De Smet*, A. Avci*, R. Beernaert*, D. Cuypers**,
H. De Smet*,***Ghent Univ., Belgium**imec, Belgium

A spherically curved cavity ﬁlled with a dichroic dye doped liquid crystal
was made using ﬂexible LCD processing techniques in order to create
a contact lens display technology. Processing issues are described andtheir inﬂuence on uniformity and contrast are discussed.

176

Thursday

December 2

MEET2 - 5L Speckle Reduction Using a Sinusoidal Rotating
12:05
Grating
S. Egge, M. Nadeem Akram*, V. Kartashov**,
U. Österberg, A. Aksnes
Norwegian Univ. of Sci. & Tech., Norway*Vestfold Univ. College, Norway**poLight AS, Norway----- Lunch ----13:20 - 14:40

Room 402

MEET3: Optical MEMS and Device Technologies
Chair:
Co-Chair:Y. Bonnassieux, Ecole PolyTech., France
R. Sawada, Kyushu Univ., Japan

MEET3 - 1: Invited LED Backlighting with Quantum Dots
13:20
S. Sadasivan, S. Shah, S. Coe-Sullivan
QD Vision, USA
Quantum dots (QDs) are nanomaterials that emit saturated light. In
combination with blue LEDs, green and red QDs create white light. QD
LCDs show improved color gamut over white LED LCDs. The increased
gamut leads to higher perceived brightness. Such beneﬁts make QDs a
compelling choice for use in LCDs.
MEET3 - 2: Invited Emerging Front Light Technologies for
13:45
Reflective Displays Technologies
R. Rao, R. Grulkhe, M. Mienko, I. Bita
Qualcomm MEMS Techs., USAReﬂective Displays are gaining tremendous popularity in mobile
devices (e.g. e-readers) due to their sunlight readability and low power
consumption. Main contribution to their power efﬁciencies is lack ofbacklight. However reﬂective displays need supplemental front-lighting
in darker ambients. We highlight emerging front-lightings based on thework accomplished at Qualcomm.

177

MEET

Laser illumination in display projectors requires the presence ofspeckle to be reduced. A novel idea for speckle reduction uses therotation of a diffraction pattern to cover different areas on a diffuse
surface, producing independent speckle pattern. A speckle contrast of
0.27 was achieved, with further reduction possible.

Thursday
MEET3 - 3
14:10

December 2
A Study of Light Guide Film with External
Illuminance Backlight Module
Y.-C. Fang, J.-C. Yu, C.-M. Tsai*, C.-H. Huang,
B.-R. Hsueh, C.-A. Chen
Nat. Kaohsiung First Univ. of S&T, Taiwan*Kun Shan Univ., Taiwan

This research proposes the concept of Back Light Unit(BLU) withexternal illuminance. This special optical design may introduce theexternal light into BLU in order to improve the power-saving. One is for
14-in. monitor, which has 21% improvement. Another for 3.5-in. display
might have improvement 15%.
MEET3 - 4
14:25

Will Display Type LED Light Source Suitable for the
Matching of the Chlorophyll/PAR Spectrum?
C. R. Ou, J. S. Wang, H. P. Lo, L. Tasi
Hsiuping Inst. of Tech., Taiwan

LED illuminating technologies provide a promising future for plant
growth and global farming. However, there are misunderstandings
and the disadvantages for part of the LED based application to theplant growth system. Discussion and recommendation based on thecomparison of the spectrums will be present.
----- Break ----15:00 - 16:20

Room 402

MEET4: Displays and Imaging
Chair:
Co-Chair:S. Coe-Sullivan, QD Vision, USA
M. Sasaki, Toyota Tech. Inst., Japan

MEET4 - 1: Invited Successful Optical MEMS and their
15:00
Application
R. Sawada
Kyushu Univ., Japan
Optical MEMS is one of the most promising and successful targetsof the application of MEMS technology. There has been developing
various kinds of category of this ﬁeld. Some topics will be shown inthis presentation; analogue mirror and sensors such as displacement
sensor. Packaging and bonding technology are also hot topics as isalways the case. In addition to such topics sensor in living body will beshown as a new topics in this ﬁeld.

178

Thursday

December 2

MEET4 - 2: Invited MEMS Based Time Multiplexed Optical
15:25
Shutter (TMOS) Full Color Display
D. V. Ostrand, R. Ramakrishnan
Uni-Pixel Displays, USA

MEET4 - 3
15:50

Review of Microdisplay Device and System
Components for Optogenetic and Optical Neural
Guided Experiments
C. R. Ou, C.-I. Shen*
Hsiuping Inst. of Tech., Taiwan*Nat. Chung Hsing Univ., Taiwan

Optogenetic technology is been consider as one of the most promisingbiomedical breakthrough for neuron science. The contribution of thedisplay technology for the neuron science research will be report, andthe common platform for optogenetic and optical neuro guiding device
will be addressed.
MEET4 - 4
16:05

Switching Property of Carbon Nanotube Emitters byUsing MOSFET
W. M. Bae, J. H. Ryu, N. Y. Bae, H. M. Oh, E. H. Lee,A. N. Ha, J. Jang, K. C. Park
Kyung Hee Univ., Korea

The electron emission current of CNTs was well switched with a low
voltage with MOSFET. The switching properties of CNT emitters wasstudied. For 500 μA emission current switching, the electron emitter
keeps constant electron emission current between 1300 V and 2100 V
region with 0.02 % variation.
----- Break -----

179

MEET

The most signiﬁcant challenge in making a full color MEMS display
with a deformable membrane is the membrane. It must have the correct
optical, mechanical and electrical properties. The membrane we havedeveloped for TMOS™ fulﬁlls these challenges.

Thursday

December 2

16:40 - 17:55

Room 402

MEET5: Fundamental Components, Process Technologies (2)Chair:
Co-Chair:

D. V. Ostrand, Uni-Pixel Displays, USA
R. Rao, Qualcomm MEMS Techs., USA

MEET5 - 1: Invited Increased Spatial Homogeneity in a Light16:40
Emitting InGaN Thin Film Using a Phonon-Assisted
Optical Near-Field Process
T. Yatsui, M. Ohtsu
Univ. of Tokyo, Japan
We report a self-assembly method that produces greater spatial
uniformity in InGaN thin ﬁlms using optical near-ﬁeld desorption.
Spatial homogeneity in the In fraction was reduced by introducing
additional light during the photo-enhanced chemical vapour depositionof InGaN.
MEET5 - 2
17:05

Development of Full-Color Active-Matrix Quantum
Dot Light Emitting Diode Displays
P. Kazlas, Z. Zhou, M. Stevenson, Y. Niu, C. Breen,
J. Perkins, S.-J. Kim, G. Mahan, J. Steckel,
S. Coe-Sullivan, J. Ritter
QD Vision, USA

Quantum dot light emitting diodes are a printable thin ﬁlm
electroluminescent technology that delivers exceptional color andefﬁciency at low cost of manufacture for display and solid-state lighting
applications. We report on our progress developing efﬁcient, stable
QLEDs for full-color active-matrix displays, including recent advances
in device performance and lifetime.
MEET5 - 3
17:20

Sharp and Uniform Conductive Ceramic Transfer
Mold Field Emitter Arrays
K. Suzuki, M. Nakamoto, J. H. Moon
Shizuoka Univ., Japan

Sharp and uniform conductive ceramic Cr3Si·SiO2 Transfer Mold ﬁeld
emitter arrays with less than 5.0 nm tip radius have been developed byTransfer Mold method to realize the low operation voltage and stablevacuum nanoelectronic devices for lamps, backlight units, and electric
propulsion engines for satellites and spaceships.
MEET5 - 4L Processing of Interferometric MEMS-type Reflective
17:35
Display using Photoresist as Sacrificial Layer
H.-C. Park, Y.-S. Kim
Hongik Univ., Korea
In this study, an attempt was made to utilize photoresist as a sacriﬁcial
layer in the processing of interferometric type MEMS reﬂective displays.
The results indicated that the photoresist became dissolved in etchingsolution more cleanly, making the process more productive andeconomic.
180

Thursday

December 2

MEET5 - 5L Transmittance Enhancement in an IZO/Ag/IZO
17:45
Transparent Electrode Using Surface Plasmon
S. H. Oh, S.-M. Lee, K. C. Choi
KAIST, Korea

Author Interviews
18:00 – 19:00

181

MEET

In this work, an IZO/Ag/IZO structured transparent electrode wasinvestigated through a silver annealing process. A silver layer was
independently deposited in an additional annealing process. Thismethod resulted in an increment of 7% of the transmittance through thesuccessful formation of a silver layer with a corrugated surface.

Thursday

December 2

Workshop on
Display Electronic Systems
Thursday, December 2
9:00 - 12:00

Poster/A.I. Room

Poster DESp: Display Electronic Systems
DESp - 1

Adaptive Frame Rate Modulation Architecture forPower Saving
D.-W. Kuo, J.-S. Liao, H.-H. Chen, W.-T. Tseng,
C.-R. Lee
Chunghwa Picture Tubes, Taiwan

Chunghwa Picture Tubes, LTD. (CPT) has presented an algorithm ofpower saving for TFT LCD. This technique could change regional frame
rate according to what kind of image data is displayed. If the image isstatic state, the frame rate can be reduced that can also reduce power
consumption.
DESp - 2

Novel Signal Interface for TFT-LCD Module Test
Using Power Line Communication Method
J. M. Lee, H. S. Kim, J. H. Yoo, S. Y. Han
Samsung Elect., Korea

We ﬁrstly proposed the power line communication as novel signal
interfaces in the LCD module test. Comparing with conventional autocontact, low failure rate and high speed communication were achieved.
No side effect of electromagnetic interference was observed, meaningthat PLC could be a promising signal interface in the future.
DESp - 3

A Novel Passive Matrix Drive Scheme for Bistable
Chiral Splay Nematic LCDs
J. G. Ying, S. B. Kwon, C. G. Jhun, Y. M. Lee, K. S. Kim,
D. C. Jeong
Hoseo Univ., Korea

In this paper we discuss a novel passive matrix drive scheme forbistable chiral splay nematic LCDs. We use three voltage levels forthe addressing in this drive scheme. And different from other passive
matrix drive schemes, the data voltage is hundreds of mV and thefrequency is about 1 Hz.

182

Thursday
DESp - 4

December 2High Performance Digital Signage Using Color
Sequential TechniqueT.-C. Yang, K.-H. Chien, W.-C. Tai
Chunghwa Picture Tubes, Taiwan

A high performance digital signage has been developed. Color
Senguential Display (CSD) panel which using PWM control RGB LED
backlight and color ﬁlter less glass composed the digital signage. Thishigh performance digital signage achieves high color gamut, contrast
and low power consumption.
DESp - 5L

LCD Backlight Controller Using Passive SigmaDelta Modulator PWM Generator

DES

Y.-M. Lee, K.-S. Lee
Sun Moon Univ., Korea*Univ. of Akron, USA
This works describes a LCD backlight controller using passive
ΣΔ modulator PWM generator. In this scheme, a PWM signal
corresponding to the ambient light level is generated from the pulse
density modulated ΣΔ output. Therefore, the area and power can be
reduced compared to conventional PWM generator circuits.
----- Lunch ----13:20 - 14:50

Room 412

VHF4/DES1: Multi Primary (1)Chair:
Co-Chair:K. Sekiya, Tohoku Univ., Japan
T. Matsumoto, Sony, Japan

VHF4/
DES1 - 1:
13:20

Invited Measuring Light and Color: An Introductory
Talk to Colorimetry
N. OhtaRochester Inst. of Tech., USA

Colorimetry is quantifying colors, that is, an art of expressing colors
by numbers. There are two classes of quantiﬁcation: color appearance
system and color mixing system. The gist of the two methods will be
introduced.

183

Thursday
VHF4/
DES1 - 2
13:50

December 2
A New Evaluation Method of Color Reproductive
Performance and Evaluation of Multi-Primary Color
Display
M. Teragawa, T. Kanda, T. Fujine, M. Sugino,
Y. Miyanaga*
Sharp, Japan*Hokkaido Univ., Japan

This paper proposed new evaluation of color reproductive performance,and evaluated MPC display. We used coverage ratio against object
color for evaluation of outer frame structure, and CDI for evaluation of
inner structure. We clariﬁed MPC display was suitable for expressing
object colors and had advantage of smooth color reproduction.
VHF4/
DES1 - 3
14:10

Color Reproduction of Multi-Primary Color Display:
Numerical Analysis Method and Application to
Lower Power Consumption
T. Fujine, M. Teragawa, N. Ohta*
Sharp, Japan*Rochester Inst. of Tech., USA

We analyze color reproduction of multi primary color (MPC) display,and propose to calculate primary amount of color mixing for MPC in
minimum power consumption by linear programming. As an example,
we analyze characteristics of RGB+Y four primary color system incomparison with RGB system.
VHF4/
DES1 - 4
14:30

A Numerical Evaluation across Multi-Primary Color
Systems
A. Yoshida, K. Yoshiyama, K. Tomizawa, K. Nakamura,Y. Yoshida, M. Teragawa, Y. Yamamoto*, N. Ohta**
Sharp, Japan*CIS Labs., Japan**Rochester Inst. of Tech., USA

We conducted a numerical analysis over several Multi-Primary Color(MPC) display systems consisting of RGB + Cyan primaries. We
compared the results with our previous results (RGB + Yellow and
RGB + White) for indicating characteristics of different MPC systems interms of luminance reproduction and power consumption.
----- Break -----

184

Thursday

December 2

15:00 - 16:20

Room 412

VHF5/DES2: Multi Primary (2)Chair:
Co-Chair:N. Ohta, Rochester Inst. of Tech., USA
T. Matsumoto, Sony, Japan

VHF5/
DES2 - 1:
15:00

Invited Four Primary Color (RGB+Y) Displays: The
Latest Technologies and Advantages
M. Teragawa
Sharp, Japan

VHF5/
DES2 - 2
15:40

High Resolution Reproducibility of Multi-Primary
Color Displays
K. Yoshiyama, H. Furukawa, N. Kondoh, S. Nakagawa,Y. Yoshida
Sharp, Japan

In this paper, we focus on high resolution characteristic of MultiPrimary Color (MPC) display, and show that horizontal resolution canbe approximately twice for stripe-patterned four-primary color display
by the combination with advanced sub pixel signal processing.
VHF5/
DES2 - 3
16:00

Advanced RGBW Display Image Process Using
Sub-pixel Rendering
M.-C. A. Kao, P.-L. Hsieh, H.-T. Lin
Chunghwa Picture Tubes, Taiwan

A novel image process has been developed to transform RGB into
RGBW. It comprise the “RGBW mapping algorithm” is used to adjustcolor of image. And the “Virtual resolution scaling” is used to increase
the apparent resolution. And the “W signal controlling” is used toincrease sunlight readability.
----- Break -----

185

DES

This paper reviews the latest RGB+Y four primary color LCD
technologies and the advantages. RGB+Y LCD has advantages for
not only color reproducibility but also power consumption, in addition,higher resolution. RGB+Y LCD along with UV2A can make LCD-TV
improved in all ways.

Thursday

December 2

16:40 - 18:00

Room 413

3D3/DES3: 3D System and Content
Chair:
Co-Chair:J.-Y. Son, Daegu Univ., Korea
T. Fujine, Sharp, Japan

3D3/
DES3 - 1:
16:40

Invited Full HD and Super-High Image Quality 3D
Plasma TV Technology
K. Tasaka, M. Kawashima, K. Suetsugi, M. Ishizuka,
T. Yamashita, Y. Sugio
Panasonic, Japan

This paper introduces the basic concept of Full HD and High Image
Quality 3D Plasma Theater System and the key technology of Full HD
and Super-High Image Quality 3D Plasma TV which was realized by
the newly developed technology of Plasma panel improvement andnew 3D system technology of both Plasma panel and 3D eyewear.
3D3/
DES3 - 2:
17:00

Invited Real-Time 2D-to-3D Conversion: Basic
Concepts and Practical Use
K. Yamada, Y. Suzuki
JVC Kenwood Holdings, Japan

This paper describes the algorithm for our original 2D-to-3D conversion
technology, which is beginning to be used for both consumer andprofessional apparatuses to fulﬁll the growing need for high quality
3D contents. The algorithm has advantages in quality, numericalcomplexity, no need of frame memory and very low latency.
3D3/
DES3 - 3:
17:20

Invited From 3D technology to New Styles of Visual
ImagesM. Ikeo, A. Saito, Y. Nishida
NHK Media Tech., JapanThe desire to visualize our imagination in new ways has encouraged
the evolution of the media, while technical innovation has inspired ourimagination. However, recent rapid advances in digital technology areleading the media not to represent human imagination but to mirror theactual world with ever greater reality. Can ﬁlmmakersʼ imagination catch
up with the hyperrealism of the visual media? Content creators mustshed the bonds of 3D images and develop new styles of visual images.
3D3/
DES3 - 4:
17:40

Invited 3D Video Formats and Compression forContent Distributions
H. KimataNTT, Japan

Usage of 3D video would increase as the growth of 3D content
production. The suitable 3D video format depends on the purpose
in applications. This paper summarizes 3D video formats andcompression technologies distinguished by purposes and it addresses
the trends of stereoscopic video and multi-view video formats.

186

Friday

December 3

Author Interviews
18:00 – 19:00

Friday, December 3
9:00 - 10:00

Room 413

DES4: Display Electronics
Chair:
Co-Chair:T. Yamamoto, NHK, Japan
H. Sasaki, Toshiba, Japan

DES4 - 1
9:00

The Optimal RGB LED Driving Scheme for Color
Sequential LCD

DES

T. P. Lin, K. T. Hu, C. L. Liu, C. H. Tien*
Chunghwa Picture Tubes, Taiwan*Nat. Chiao Tung Univ., Taiwan
This paper demonstrated a 15-inch color sequential display by using
RGB LED-based backlit embedded with a color sensor feedback
system. The driving sequence of RGB LEDs is essential for eventual
image qualities. And a color sensor feedback system was employed toregulate LED brightness and any customized white point.
DES4 - 2

Withdrawn

DES4 - 3
9:20

A Linear 10-Bit DAC for LCD Driver ICs Using
Charge Subtraction Interpolation
J. Bae, Y. Jang, H. N. Nguyen, S. Lee
KAIST, Korea*Silicon Works, Korea

A linear 10-bit digital-to-analog converter has been designed for LCD
driver ICs. The proposed architecture suggests charge subtraction
interpolation technique with switched-capacitor DAC. The size of DAC
will be decreased around half and DNL, INL simulation results are
smaller than 0.04 LSB.
DES4 - 4
9:40

On–Chip DC-DC Converter Technique for Mobile
Flat-Panel Display
Y.-S. Ahn*,**, J.-M. Choi*, J.-S. Lee*, Y.-S. Kim*,
H.-S. Oh*, J.-K. Kang***Silicon Works, Korea**Inha Univ., Korea

One of single-chip display driverʼs components is power management
block. Unfortunately, power management block is an interfering. So, aspread spectrum is widely applied technique to reduce EMI. But, power
management block using spread spectrum lowers displayʼs image
quality. We propose a single-chip display driver for lossless displayʼs
image quality.
----- Break ----187

Friday

December 3

10:40 - 12:00

Room 413

DES5: Low Power Technology
Chair:
Co-Chair:

H.-S. Koo, Ming-Hsing Univ. of S&T, Taiwan
K. Sekiya, Tohoku Univ., Japan

DES5 - 1:
10:40

Invited Method to Save Power While Watching TV
According to Viewer Watching Action
T. Yoshinaga, S. Nagaya, T. Fujita, H. Sakaniwa, H. Ito
Hitachi, Japan

We propose a method to conserve TV power according to the viewerʼs watching action. In this method, a camera is used to classify theaction, and the panel backlight power is then automatically controlled.
Experimental results indicated the power consumption was reduced by
18.6% using this method.
DES5 - 2:
11:00

Invited Low-Power Mobile Processor Design for
Full-HD Video Coding
M. Kimura, K. Iwata, S. Mochizuki, H. Ueda,
R. Hashimoto, H. Hatae, H. Watanabe
Renesas Elect., Japan

Todayʼs cellular phone must support full high-deﬁnition video
encoding and decoding. In order to reduce static and dynamic power
consumption, this paper introduces multiple power-domain control,
dynamic clock control, and video codec architecture based on picturelevel pipeline manner. Our mobile application processor consumes
342 mW in real-time decoding of Full-HD video.
DES5 - 3
11:20

Contrast Ratio Enhancement and Power Saving for17.3-in. LCD with Side-Lit LED-Backlight Structure
T.-C. Shen, S.-M. Chang
Chunghwa Picture Tubes, Taiwan

This paper proposes a method to calculate the brightness distributionof backlight model for 17.3-in. LCD LED-backlight display. An exact datacompensation calculation method is applied to Site-lit LED-backlight
structure so that power is conserved and also contrast ratio is increased.
DES5 - 4
11:40

Key Feature Highlighting: A High Ambient Display
and Extreme Display Power Reduction Technology
X. Xu, L. Kerofsky
Sharp Labs. of America, USA

Low contrast viewing of LC displays occurs often nowadays which
includes high ambient viewing of mobile LC devices and LC TV viewing
at extreme low power mode. In this paper, Key Feature Highlighting(KFH) technology is proposed to improve perceived contrast andvisibility of images at low contrast viewing conditions.
----- Lunch ----188

Friday

December 3

13:20 - 14:40

Room 413

DES6: Display Quality
Chair:
Co-Chair:T. Fujine, Sharp, Japan
A. Nagase, Mitsubishi Elec., Japan

DES6 - 1:
13:20

Invited Halo Artefact Visibility for Local Backlight
Dimming LCD Systems
M. Hammer, R. Muijs*, E. H. A. Langendijk
Philips Consumer Lifestyle, the Netherlands*Philips Res. Labs., the Netherlands

DES6 - 2:
13:40

Invited Universal Overdrive Technology for LCD
Systems and High-Refresh Rate LC TVs
S.-W. Lee
Kyung Hee Univ., Korea

This paper describes a universal overdrive technology for LCD systems
regardless of LC modes. This paper shows a method to simulatetransient optical responses of matrix-driven LCDs using dynamic circuit
model of LC pixels. Special considerations on the OD technology
applicable to high refresh-rate LC TVs will be presented.
DES6 - 3:
14:00

Invited Mobile Color Depth: A Perceptual ColorPerformance Metric for Mobile Displays
J. Gille, G. U’Ren
Qualcomm MEMS Techs., USA

Display color performance is regularly described by data input format(e.g., 24-bit color) as opposed to perceived number of colors output fora given viewing environment. Mobile Color Depth (MCD) is developed
as a vision-based metric quantifying perceived numbers of colors,
providing an understandable, unitary, display-performance metric.
DES6 - 4
14:20

Subjective Quality Assessment of Adaptive
Temporal Filter for High Frame-Rate Video
Y. Bandoh, S. Takamura, H. Jozawa
NTT, Japan

In the design of an adaptive temporal ﬁlter for high frame-ratesequence, it is important to set suitable ﬁlter parameter in order to keep
subjective quality of down-sampled sequence. In this paper, we clarify
relationship between the subjective quality of down-sampled sequenceand ﬁlter conﬁguration for generating down-sampled sequence.
----- Break ----189

DES

To increase display contrast, local backlight dimming LCDs havebecome common practice. However, the spatial resolution of asegmented backlight is typically well below that of the LC-panel. In dark
image regions, this may result in undesirable halo artefacts due to lightleakage through the panel of the low-resolution backlight image. In thiscontribution we propose a signal processing approach to determine thevisibility of halo artefacts.

Friday

December 3

15:00 - 16:20

Room 413

DES7: Visible Light Communication
Chair:
Co-Chair:S. Ito, Shizuoka Univ., Japan
H. Okumura, Toshiba, Japan

DES7 - 1:
15:00

Invited Visible Light Communication
S. Haruyama
Keio Univ., Japan

Visible light communication is a new way of wireless communication
using visible light. Main transmitters used for visible light
communication are visible light LEDs and receivers are photodiodes
and image sensors. We present new applications which will be madepossible by visible light communication technology, such as indoor
navigation system.
DES7 - 2:
15:40

Invited Image Sensor Communication - A New Way
of Visible Light Communication
N. Iizuka
Casio Computer, Japan

Image Sensor communication (ISC) is a new communication
technology using two-dimensional image sensors such as CCDs or
CMOS sensors. It is a new way of Visible Light Communication (VLC).
And it has remarkable features. In this paper, we present the results offeasibility trials and various applications of ISC.
DES7 - 3:
16:00

Invited A CMOS Image Sensor for Car-to-Car andRoad-to-Car Optical Communication
S. Itoh, M. S. Z. Sarker, K. Yasutomi, M. Hamai,
Y. Iwama, I. Takai*, M. Andoh*, S. Kawahito
Shizuoka Univ., Japan*Toyota Central R&D Labs., JapanA CMOS image sensor for Car-to-Car and Road-to-Car opticalcommunication is presented. A prototype sensor chip achieves
high data rate up to 10 Mbps at the communication distance of over
100 meters while attaining signal light source ﬁnding and tracking
functions.

190

Friday

December 3

16:20 - 16:25

Room 413

Closing
Closing Remarks
16:20
H. Okumura, Toshiba, Japan
Author Interviews
16:20 – 17:20

EXHIBITION
12:00 – 18:00 Wednesday, Dec. 1, 2010
10:00 – 18:00 Thursday, Dec. 2, 2010
10:00 – 14:00 Friday, Dec. 3, 2010
2F Lobby, 4F Lobby
Fukuoka International Congress CenterFree admission with your registration name tag

SID 2011
International Symposium, Seminar and Exhibition
May 15-20, 2011
Los Angeles, California, U.S.A.
191

DES

Supporting Organizations:Technical Committee on Electronic Information Displays, Electronics
Society, IEICE
Technical Committee on Image Engineering, Information and
Systems Society, IEICE
Information Sensing Research Committee, ITE

Wednesday

December 1

Workshop on Flexible Displays
Wednesday, December 1
13:20 - 13:25

Room 204

Opening
Opening Remarks
13:20
T. Furukawa, Kyodo Printing, Japan
13:25 - 14:30

Room 204

FLX1: Advanced Flexible Display Technologies
Chair:
Co-Chair:

H. Naito, Osaka Pref. Univ., Japan
H. Hirata, Toray Eng., Japan

FLX1 - 1:
13:25

Invited Recent Advances in Flexible Displays of
e-Paper Application
J.-W. Shiu, W.-W. Chiu, C.-C. Tsai, C.-Y. Huang, J. Chen
ITRI, Taiwan

The ﬂexible display reported here is ideal for roll-to-roll process with asimple structure on single substrate. The performance has improvedin reﬂectance and contrast ratio. A thermal addressing method isdeveloped for ultra long e-paper applications with high resolution. Many
novel applications of the display are also revealed.
FLX1 - 2
13:50

Low Temperature Annealing Amorphous In-Ga-Zn-O
Thin-Film Transistor on Plastic Substrate
T. Hanada, T. Negishi, M. Soeda, T. Shiro
Teijin, JapanFor ﬂexible display development, amorphous In-Ga-Zn oxide thin ﬁlm
transistors were fabricated on plastic substrate at ambient temperature.
The transistor structure was coplanar top-gate. After annealing at 150
C the ﬁeld-effect mobility was 7.4 cm2/Vs, threshold voltage 0.3 V,
subthreshold swing 0.29 V/decade and on-off current ratio 108.
FLX1 - 3
14:10

Effect of AC and DC Gate Bias-Stress on the
Performance of a-IGZO TFTs on Plastic Substrate
M. Mativenga, M. H. Choi, J. W. Choi, J. Jang
Kyung Hee Univ., Korea

The effect of AC and DC gate bias stress is investigated in a-IGZO
TFTs on polyimide. For the same effective stress time, AC induces asmaller positive ∆Vth compared to DC stress, indicating trapping as
the main degradation mechanism. The time dependence of ∆Vth thus
follows the stretched exponential equation.
----- Break ----192

Wednesday

December 1

15:00 - 16:25

Room 204

FLX2: Printing Fabrication Processes
Chair:
Co-Chair:M. Funahashi, Kagawa Univ., JapanT. Furukawa, Kyodo Printing, Japan

FLX2 - 1:
15:00

Invited Low Temperature Wiring Technology for
Printed Electronics
K. Suganuma, M. Nogi, M. Hatamura, T. Araki, J. Jiu
Osaka Univ., Japan

Flexible low temperature wiring methods have been developed. The
room temperature curable Ag nanoparticle ink and the Ag carboxylate
ink have been successfully developed for temperature sensitive
substrates. Ag-urethane conductive adhesive exhibits excellent
stretchability on a ﬂexible substrate up to 600% elongation without
serious damage.
Invited Development of Low Temperature Printing
Techniques for Flexible Display Fabrication

FLX

FLX2 - 2:
15:25

T. Kamata, M. Yoshida, T. Kozasa, S. Uemura,N. Takada, K. Suemori, S. Hoshino, N. Ibaraki
AIST, Japan
We have developed several kinds of low temperature printing
techniques of metal, inorganic semiconductor and dielectric layers for
ﬂexible display fabrication. These developed techniques were effective
to obtain enough high electronic performance of the printed layer
although process temperature was below 100˚C .
FLX2 - 3
15:50

All-Printed Flexible 5.35-in. Organic TFTs with 150
ppi Resolution for Electrophoretic Electronic Papers
Y. Ito, R. Matsubara, O. Kina, M. Ishizaki, M. Ito
Toppan Printing, Japan

All-printed ﬂexible 5.35-in. VGA electronic papers were successfully
driven by organic thin ﬁlm transistors (OTFTs) with 150 ppi resolution.
A poly-ethylene-naphthalate (PEN) ﬁlm was used for the substrate
and all the components were printed without any photo-lithographicalprocess. The printed OTFTs showed over 0.2 cm2/Vs mobility andexcellent uniformity.

193

Wednesday
FLX2 - 4L
16:10

December 1
Development of Printed, High-Performance Organic
Semiconductor Devices
G. Lloyd, T. Backlund, P. Brookes, L. W. Tan,
P. Wierzchowiec, S. Bain, J.-Y. Lee, M. James,
J. Canisius, S. Tierney, K. Kawamata*, T. Wakimoto*Merck Chems., UK*Merck, Japan

We present our new formulation and material developments enablinghigh volume and high throughput printing techniques to be used forelectronic circuit and backplane production. Performance levels inexcess of 2 cm2/Vs, comparable to spin coating are demonstrated for
ﬂexographic and gravure based printing techniques for both top-gateand bottom-gate architectures.
----- Break ----16:40 - 18:00

Room 204

FLX3/EP1: Flexible Electronic Paper
Chair:
Co-Chair:Y. Masuda, Bridgestone, Japan
H. Fujikake, NHK, Japan

FLX3/
EP1 - 1
16:40

Large Area and High Precision Organic TFT Array of
A4 Size with 200 ppi on Plastic Substrateby Microcontact Printing Technique
K. YaseAIST, Japan

We have succeeded in driving a high resolution polymer network liquid
crystal display (PNLCD) by using OTFT array obtained by microcontact
printing (µCP) method. By optimizing the fabrication condition, 200 ppi
with the pixel size of 125 μm on A4 size plastic substrate was achieved.
FLX3/
EP1 - 2
17:00

Development of Flexible Electronic Paper
with Transparent Polymer Electrodes Preparedthrough Directly Printing Approach
M. Nishii, Y. Iwabuchi, H. Kotsubo, R. Sakurai,
Y. Masuda, R. Hattori*
Bridgestone, Japan*Kyushu Univ., Japan

A 4.0 in. diagonal and 88 dpi ﬂexible electronic paper with line-shaped
electrodes composed of transparent conductive polymer of PEDOT/
PSS was prepared and passive matrix images were successfully
displayed. The line-shaped electrodes of the conductive polymer weredirectly formed onto the ﬂexible PET substrate by using screen printing
method.

194

Wed./Thu.
FLX3/
EP1 - 3
17:20

December 1/2
Flexible Color Ch-LC E-Papers
S.-C. Chen, H.-Y. Chen, C.-C. Liang, C.-L. Chin,
C.-W. Chen, J.-Y. Su
ITRI, Taiwan

This paper proposes ﬂexible color Ch-LC e-papers. By adding
photochiral dopant, single substrate ﬂexible Ch-LCD becomes sensitive
to UV light. Therefore, UV exposure can cause the discontinuouschange in the helical pitch of the Ch-LC pixels to locally colorize thee-paper. After being colorized, the color e-paper can be electricallydriven to update the displayed content. In this paper, the 50 dpi color
R2R Ch-LC e-paper is implemented.
FLX3/
EP1 - 4
17:40

Preliminary Evaluation of LED Photo-Addressing
on ChLCD Electronic Paper
W.-J. Li, C.-J. Li, M.-Y. Lu, B.-W. Xiao, T.-T. Chang,
K.-J. Hu
ITRI, Taiwan

Author Interviews
18:00 – 19:00

Thursday, December 2
9:00 - 10:15

Room 204

FLX4/OLED4: Flexible OLED
Chair:
Co-Chair:T. Kamata, AIST, Japan
S. Naka, Univ. of Toyama, Japan

FLX4/
OLED4 - 1
9:00

Solution-Processed Organic Films of Multiple SmallMolecules and White Light-Emitting Diodes
W. Dongdong, W. Zhaoxin, Z. Xinwen, J. Bo, L. Shixiong,
W. Dawei*, H. Xun
Xi’an Jiaotong Univ., China*Univ. of Arkansas, USA

We found that the spin-coated ﬁlms of NPB, and blends of NPB
and DPVBi, though having lower densities, were more uniform thantheir vacuum-deposited counterparts. Using the spin-coated ﬁlms of
NPB:DPVBi as mixed host, doped with blue and yellow dyes, new whiteorganic light-emitting devices (WOLEDs) were demonstrated.

195

FLX

We have done a preliminary work on photo-addressing method for
Chlcd electronic paper with auxiliary LED light source. The Chlcd
electronic paper could be written more efﬁciently by controlling highluminous intensity LED appropriately. Finally we have realized theprototype of the photo-addressable electronic paper with LED light pen.

Thursday
FLX4/
OLED4 - 2
9:20

December 2
Flexible OLED Encapsulation by Glass Base
Technology
G. Chen, S.-T. Yeh, P.-I Shih, J.-L. Wu, K.-Y. Cheng,
L.-Y. Jiang, Y.-Y. Chang
ITRI, Taiwan

A ﬂexible OLED encapsulation process was successfully developedwith glass base OLED mass production equipment. These ﬂexible
encapsulation OLED devices have good ﬂexibility and environment
reliability. We expected this approach will be the important way to
manufacture the ﬂexible OLED devices using currently most OLED
equipment facility.
FLX4/
OLED4 - 3
9:40

Graphene Sheet Synthesized with Microwave
Eradiation and Interlinked by Carbon Nanotubes forHigh-Performance Transparent Flexible Electrodes
G. Xin, W. Hwang, N. Kim, H. Chae
Sungkyunkwan Univ., Korea

High quality graphene was obtained though microwave irradiating
expansion following a solution process. By combining Carbon
Nanotubes (CNTs) as bridges between graphene ﬂakes, allowed thefabrication of high performance conductive ﬁlms with conductivities
and optical properties: 181 Ωsq-1 at 82.2% transmittance after chemicaltreatment and doping.
Fabrication of QVGA Flexible Phosphorescent
FLX4/
OLED4 - 4L AM-OLED Display using Ink-jet Printing
10:00
M. Suzuki, H. Fukagawa, G. Motomura, Y. Nakajima,
M. Nakata, H. Sato, T. Shimizu, Y. Fujisaki, T. Takei,
S. Tokito*, T. Yamamoto, H. Fujikake
NHK, Japan*Yamagata Univ., JapanWe demonstrated a 5-inch QVGA ﬂexible phosphorescent AM-OLED
display driven by OTFTs on a plastic substrate. Cross-linked oleﬁnpolymer was used as the gate insulator. Phosphorescent polymer
materials were used for emitting layer of OLEDs, which were patternedby ink-jet printing. Color moving images were achieved by the display
panel.
----- Break -----

196

Thursday

December 2

10:40 - 12:10

Room 204

FLX5/AMD4: Flexible Active-Matrix Devices
Chair:
Co-Chair:K. Tsukagoshi, NIMS-MANA, Japan
T. Shiro, Teijin, Japan

FLX5/
AMD4 - 1:
10:40

Invited Application of Organic Thin-Film Transistors
for Circuits on Flexible Foils
P. Heremans*,**, K. Myny*,**, H. Marien**,E. V. Veenendaal***, S. Steudel*, J. Genoe*,
M. Steyaert**, G. H. Gelinck*****imec, Belgium**Katholieke Univ. Leuven, Belgium***Polymer Vision, the Netherlands****Holst Ctr. TNO, the Netherlands

FLX5/
AMD4 - 2:
11:05

Invited A Rollable OTFT-OLED Display
I. Yagi, M. Katsuhara, A. Yumoto, N. Kobayashi, M. Noda,
R. Yasuda, S. Ushikura, G. Yukawa, N. Hirai, K. Nomoto,
T. UrabeSony, Japan

A rollable OLED display, which can be rolled-up in a radius of 4 mm, isdriven by a newly-developed OTFT backplane. The backplane equips
with an integrated gate driver circuit and it is constructed of OTFTs
using a self-developed organic semiconductor, a PXX derivative.
FLX5/
AMD4 - 3
11:30

The High Stability and Uniformity a-IGZO Thin Film
Transistors Array for AM-OLED Application
J.-Y. Yan, H.-C. Yao, Y.-P. Chen, C.-Y. Hung, Y.-Y. Wu,
K.-Y. Ho, H.-C. Cheng
ITRI, Taiwan

The high stability and uniformity amorphous InGaZnO4 TFTs were
fabricated on plastic substrate. We optimize the process and abandon
the ES layer to reduce photomask and processing time. The mobility,
SS and Vth of a-IGZO TFTs is 7.33 cm2/Vs, 0.42 V/dec and 0.79 V. The
lifetime of AMOLED is exceeding 10 years.

197

FLX

We present the state of the art of digital and analog circuits (inparticular code generators for RFID tags, ampliﬁers, AC-DC and
DC-DC converters) using organic TFTs on plastic foil, and discuss
some design considerations needed to overcome todayʼs technology
limitations.

Thursday
FLX5/
AMD4 - 4
11:50

December 2
Full Color AM-LCDs on Flexible Glass Substrates
S. Hoehla, S. Garner*, M. Hohmann, O. Kuhls, X. Li*,
A. Schindler, N. Fruehauf
Univ. of Stuttgart, Germany*Corning, USA

We have realized a full color 4-in. quarter-VGA amorphous Silicon
AM-LCD on 75 µm ﬂexible glass substrates. With this work wedemonstrate that the incorporated ultra-thin glass substrates havesuitable properties to be compatible with a standard color AMLCD process and achieve active matrix backplanes with reliable
performance.
----- Lunch ----13:20 - 14:45

Room 204

FLX6: Flexible Organic TFT
Chair:
Co-Chair:H. Maeda, DNP, JapanK. Yase, AIST, Japan

FLX6 - 1:
13:20

Invited Organic-Inorganic Hybrid Materials
for Flexible Thin-Film Transistors
H. Naito, T. Nagase, M. Yoshikawa, T. Kobayashi,
Y. Michiwaki*, K. Matsukawa**
Osaka Pref. Univ., Japan*Fuso Chem., Japan**Osaka Municipal Tech. Res. Inst., Japan

Excellent characteristics of ﬁeld-effect transistors fabricated using
the following hybrid materials have been demonstrated. A hybrid gateinsulator of poly(methylsilsesquioxane) exhibits excellent insulating
properties, low curing temperature and low surface energy. Hybrid
semiconductors, silica nanoparticles added organic semiconductors,
exhibit drastic improvement of their wettability on low-surface-energy
surfaces.
FLX6 - 2
13:45

High Performance Organic Semiconductors
with High Field-Effect Mobilities and Low Contact
Resistances for Flexible Displays
K. Terai, E. Kawashima, N. Kurihara, H. Nagashima,
H. Kondo, M. Saito, H. Nakamura
Idemitsu Kosan, Japan

We have succeeded in developing p-type of organic semiconductors
with phenylethynyl groups, which have high ﬁled-effect mobilities (>3cm2V-1s-1). We have found that they have lower contact resistances to
Au electrodes, and conﬁrmed that they had the potential to be used asa carrier injection layer.

198

Thursday
FLX6 - 3
14:05

December 2
Solution Processed Organic Field Effect Transistors
from Novel Soluble Dinaphthothienothiophene
Precursor
Y. Ikeda, T. Negishi, S. Ohomori, T. Shiro, K. Takimiya*
Teijin, Japan*Hiroshima Univ., Japan

A soluble dinaphthothienothiophene (DNTT) precursor is developed forprinted O-FETs. The precursor is annealed in air to produce DNTT, anorganic semiconductor with high mobility and durability. O-FETs using
the precursor are fabricated on silicon or plastic substrates by spin
coating and spray deposition followed by the thermal annealing.
FLX6 - 4
14:25

Flexible Field-Effect Transistors Based on a LiquidCrystalline Semiconductor Fabricated by the
Solution Shared-Deposition Method
M. Funahashi, F. Zhang*, N. Tamaoki**Thin-ﬁlm transistors based on Liquid-crystalline phenylterthiophene,
3-TTP-Ph-5 were fabricated with a solution-shared deposition method.
The transistors on Si/SiO2 substrates exhibit the ﬁeld-effect mobility of
the hole reached 8x10-2 cm2V -1s-1 with the on/off ratio of 107. The carrier
mobility and the on/off ratio of the ﬁeld-effect transistors fabricated ona polyimide ﬁlms improved to be 5x10-2 cm2V -1s-1 and 105, respectively.
Their carrier mobilities are retained when the strain reaches 3%.
----- Break ----15:00 - 16:00

Room 204

FLX7/FMC6: Materials & Components for Flexible Displays
Chair:
Co-Chair:T. Tomono, Toppan Printing, JapanT. Ogura, Nippon Steel, Japan

FLX7/
FMC6 - 1
15:00

Transparent High Barrier Coating on Flexible Film
Substrate by Roll to Roll PECVD System
H. Tamagaki, T. Okimoto, T. Segawa
Kobe Steel, JapanA new Roll to Roll PECVD System, which generates plasma between
a pair of rollers, is developed for the deposition of SiOx transparent
high barrier coating on ﬁlm. At SiOx deposition, the deposition rate of
900 nm-m/min and barrier performance (WVTR) below 5x10-4 g/m2day
is demonstrated.

199

FLX

Kagawa Univ., Japan*Chinese Ac. of Sci., China**Hokkaido Univ., JapanThu./Fri.
FLX7/
FMC6 - 2
15:20

December 2/3
Robust Folding Structure for a Foldable Display
H.-J. Kwon, H. S. Shim, S. K. Kim, Y. T. Chun, I. S. Kee,S. Y. Lee
Samsung Advanced Inst. of Tech., Korea

Design and analysis of folding structure applied hyperelastic material
for foldable display are described. This structure allows to realize
extendable and foldable large display using conventional glass panels.
From Finite Element Method (FEM) analysis and mechanical andoptical experimental results, we can conﬁrm the design of more stablefolding structure.
FLX7/
FMC6 - 3
15:40

Direct Connection of LSI Chips to Polyethylene
Naphthalate Using Au Cone Bump
T. Shuto, N. Watanabe, A. Ikeda, T. Higashimachi*,T. Asano
Kyushu Univ., Japan*Sojo Univ., Japan

We show that the direct connection of LSI chip to PEN (polyethylene
naphthalate) ﬁlm can be realized by using Au cone bump for ﬂexible
display. More than 10,000 connections at 20 µm pitch with low
resistance can be realized at 150 ℃.
Author Interviews
18:00 – 19:00

Friday, December 3
9:00 - 12:00

Poster/A.I. Room

Poster FLXp: Flexible Materials and Devices
FLXp - 1

High Performance Nanocrystalline Silicon Thin Film
Transistors: Mechanical Device Reliability
H.-C. Lin, H.-S. Dai, K.-Y. Ho, C.-C. Hsu, S.-Y. Peng,
C.-W. Lin, P.-F. Lee, C.-H. Cheng, B.-C. Kung,
W.-Y. Chao, J.-Y. Yan, H.-C. Cheng
ITRI, Taiwan

High performance nanocrystalline silicon thin ﬁlm transistors (ncSi TFTs) on polyimide (PI) substrate are demonstrated successfully.
Mechanical reliability of nc-Si TFTs on PI shows an excellent
characteristic than hydrogenated amorphous silicon (a-Si:H) TFTs. The
TFT density of state proves that the shallow-level or deep-level defects
originate from different bending directions.

200

Friday
FLXp - 2

December 3
Characteristics Improvement for Flexible a-Si:H Thin
Film Transistor with Post Treatment Processes
L.-F. Teng, P.-T. Liu, Y.-T. Chou, Y.-S. Fan
Nat. Chiao Tung Univ., Taiwan

The performances of ﬂexible a-Si:H TFTs on stainless foil with andwithout silicon nitride passivation layer were discussed in this study.
The experiment results indicated the reliability of a-Si:H TFTs with
passivation layer under mechanical strains was improved. That's
related to the hydrogen passivating effect during deposition and postannealing process.
FLXp - 3

Flexible Ferroelectric-TFTs Using IGZO-Channel
and P(VDF-TrFE)
G.-G. Lee, S.-M. Yoon*, J.-W. Yoon, Y. Fujisaki**,
H. Ishiwara, E. Tokumitsu
Tokyo Inst. of Tech., Japan*ETRI, Korea**Hitachi, Japan

FLXp - 4

Color Shift Analysis of Reflective Flexible Display
on Bending Conditions
S.-C. Liao, B.-J. Wen
ITRI, Taiwan

The purpose of this study is to analyze the color shift of the reﬂectivetype cholesteric liquid crystal display (Ch-LCD). Under different radiusof curvature by using a ﬂexible-characteristic inspection system withan adjustable light source is presented in this paper. The color shift
behaviors of reﬂective ﬂexible display were discussed.
FLXp - 5

Moisture Permeability of Coating Film on StainlessSteel Foil
N. Yamada, T. Ogura, S. Ito, K. Nose
Nippon Steel, Japan

OLEDs fabricated on glass substrates were encapsulated with coatedand non-coated stainless steel foils followed by accelerated shelf life
test in order to estimate the moisture permeation of the coating ﬁlm.
HP-coated stainless steel foil showed the lowest moisture permeation
among the three coated stainless steel foils.

201

FLX

We report on the fabrication of a-IGZO-based ﬂexible nonvolatilememory TFTs with P(VDF-TrFE) ferroelectric polymer on the PEN
substrate. Excellent device performances, such as the ﬁeld effectmobility of 7.1 cm2V-1s-1, the subthreshold swing of 200 mV/dec, anddrain current on/off ratio of more than 105 were conﬁrmed.

Friday
FLXp - 6

December 3
Aluminum Oxide Layer Formation via PEALD for
Enhancement of Barrier Properties of Plastic
Substrates
J. S. Jang, H. G. Kim, S. S. Kim
Kyung Hee Univ., Korea

Aluminum oxide layers were successfully deposited on plastic
substrates via plasma enhanced atomic layer deposition (PEALD)
process using trimethylaluminum (TMA) and oxygen Several processparameters in PEALD process were optimized. Thin and densely
packed aluminum oxide layers deposited via PEALD showed thepotentials as promising barrier coating layers for substrates.
FLXp - 7

Colorless Polyimide Substrate for Flexible Display
G. H. Kim, W. J. Lee, J.-Y. Cai*, K.-H. Choi*
ETRI, Korea*KITECH, Korea

Transparent colorless polyimide (C. PI) substrate for ﬂexible display
was developed. In order to explore the performance and processability of this substrate, ﬂexible LCDs were fabricated and theircharacteristics were investigated.
FLXp - 8

Spraying Conductive Transparent Layer on Flexible
Thermal-Resistant Substrate
W.-M. Chou, H. H. Yu, H. -H. Lin
Nat. Formosa Univ., Taiwan

Polyarylate (PAR) substrate was prepared by hot pressing, and thena conductive polypyrrole (PPy) layer was deposited on its surface bychemical in-situ polymerization. Different temperatures were controlled
for PPy preparation. The optical transmittance and surface resistivityof the PPy layers for different polymerization times and reaction
temperatures were compared.
FLXp - 9

Stable Flexible Organic Thin Film Transistor with
Self-Assembled Monolayers Surface Treatment
C. L. Liao, C. C. Chou, C. W. Liu, K. Y. Chiang, C. Y. Leu,
J. M. Ding, J. P. Hu
ITRI, Taiwan

We deposited self-assembled monolayers by simple spin-coating
technique onto gas barrier/PEN substrate. Spin-cast SAMs had ultrasmooth crystalline surface and provided an excellent surface fororganic thin ﬁlm transistors. In fact on the SAM treated gas barrier,
OTFT showed mobility of 1.42 x 10-2 cm2/Vs and excellent bias stressstability.

202

Friday
FLXp - 10

December 3
A Low-Temperature and Highly Reproducible
Fabrication Process for High-Mobility SolutionProcessed Small Molecule Field-Effect Transistors
T. Endo*, T. Nagase*,**, T. Kobayashi*,**, K. Takimiya***,M. Ikeda****,*****, H. Naito*,***Osaka Pref. Univ., Japan**The Res. Inst. for Molecular Elect. Devices, Japan***Hiroshima Univ., Japan****Nippon Kayaku, Japan*****Ctr. for Organic Photonics & Elect. Res., Japan

A simple, low-temperature, and reproducible fabrication process of dioctylbenzothienobenzothiophene top-gate ﬁeld-effect transistors has
been reported. A total of 116 devices exhibit high mobilities of 1.59
0.40 cm2/Vs, low threshold voltages of -1.48 3.02 V, and excellent
electrical stability against a 104-s-duration gate-bias stress of -1.2 MV/cm.
FLXp - 11

Electrical Characteristics of Flexible Organic ThinFilm Transistors under Bending Conditions

FLX

F.-C. Chen, T.-D. Chen
Nat. Chiao Tung Univ., Taiwan
The electrical properties of ﬂexible organic thin-ﬁlm transistors
fabricated on stainless steel substrates were measured under different
bending conditions. We found that the compressive strain resulted in
an increased mobility while the tensile strain leaded to a decreased
one. The strains probably inﬂuenced the barrier height between the
pentacene grains.
FLXp - 12

Chemical In-Situ Polymerization of Polypyrrole on
Transparent Conductive Flexible Polyarylate
Substrate
H. H. Yu, S.-C. Huang, H.-F. Lee, W.-M. Chou
Nat. Formosa Univ., Taiwan

High optical transmittance, high thermal-resistant and anti-ultraviolet
radiation Polyethersulfone (PES) substrate was prepared by hotmelting and thermal annealing process. Single-walled carbon
nanotubes (SWCNTs) were dispersed separately with jelly ﬁg pectin
solution under sonication ﬁrst, and then sprayed on PES surface as the
conductive transparent layer.

203

Friday

December 3

FLXp - 13

New Method for Detecting Permeation Pass Way ofThin Film Encapsulation
J. K. Lee, J. S. Kim, C. K. Yoo, S. Y. Yoon, C. D. Kim,
Y. K. Hwang, I. J. Chung
LG Display, Korea

We research relations between O/Al ratio and barrier properties ofaluminum oxide which has been deposited with varying process
voltage controlled reactive sputtering conditions. A new method, using
photoluminescence material for detecting defects, is introduced here toevaluate barrier characteristics, especially sizes or density of defects inthe barrier layer.
FLXp - 14L

Annealing Effect of Low Temperature (< 150 ˚C)
Cat-CVD Gate Dielectric Silicon Nitride Films
Diluted With Atomic Hydrogen
K.-S. Keum, K.-M. Lee, J. D. Hwang, Y.-J. Lee, K.-S. No,
W.-S. Hong
Univ. of Seoul, Korea

We fabricated silicon nitride (SiNx) ﬁlms for gate dielectric layers at
low temperature (< 150℃) by Cat-CVD system. in-situ annealing
was performed without vacuum breaking after SiNx ﬁlms depositon.
Samples were annealed by oven. As a result, including hydrogensamples show more effective dielectric properties improvement.
FLXp - 15L

Characteristics of Silicon Nanocrystals Embeddedin the Silicon Nitride Films Deposited by PE-CVD ata Low Temperature
J.-D. Hwang, K.-S. Keum, Y.-J. Lee, K.-M. Lee, S. Jang,
M. Han, W.-S. Hong
Univ. of Seoul, Korea

Silicon nitride (SiNx) ﬁlms prepared by PECVD technique at a lowtemperature (200 ℃). Controlling the gas mixing ratio, R = [N2]/[SiH4],
and the plasma power can be composition parameter, X, varied from0.83 to 1.62. Photoluminescence (PL) spectra of these ﬁlms revealed
existence of nano-sized silicon particles.

IDW ’11
The 18th International Display Workshops
December 7-9, 2011
Nagoya Congress Center
Nagoya, Japan
http://www.idw.ne.jp204Wednesday

December 1

Topical Session on Touch Panels andInput Technologies
Wednesday, December 1
13:20 - 14:40

Room 502

INP1: Touch Panel (1)Chair:
Co-Chair:C. J. Brown, Sharp Labs. of Europe, UK
T. Nakamura, Toshiba Mobile Display, Japan

INP1 - 1:
13:20

Invited In-Cell Touch Panels: A Review ofTechnologies and Applications
C. J. Brown
Sharp Labs. of Europe, UK

In recent years touch panels have become a standard feature of
portable electronic devices ranging from mobile phones to tablet PCs.
In this paper we review the recent progress of in-cell capacitance andoptical type touch panel technologies and summarize their prospects inthe near future.
INP1 - 2
13:40

Read-Out Circuit Employing Varying Reference
Voltage for Capacitive Touch-Screen

INP

K. Gwak, Y.-S. Jang, S.-G. Lee
KAIST, Korea
A new capacitance measuring circuit based on a constant current
charging method for a touch-screen read-out is proposed. The method
employs a linearly varying reference voltage to a comparator toincrease the sensitivity and noise immunity. An 8bit architecture is
implemented and proved by simulation with 0.13 um technology.
INP1 - 3
14:00

A Novel Embedded Touch Display with Integrated
Chip Solution
S.-Z. Peng, C.-C. Chan, S.-H. Huang, H.-H. Chen,
W.-T. Tseng, C.-R. Lee
Chunghwa Picture Tubes, Taiwan

We propose a novel embedded capacitive touch display with sensing
display driver (SDD) IC solution to improve TSP performances. Our
novel design is not only integrated touch function and TFT driver into
one chip, but also embedded touch panel into display. This novel
design is raised up product competition.

205

Wednesday
INP1 - 4:
14:20

December 1

Invited In-Cell Capacitive Type Touch Sensor Using
LTPS TFT-LCD Technology
T. Nakamura, S. Tomita
Toshiba Mobile Display, Japan

We discuss in-cell light sensor technologies and describe an LTPS
TFT-LCD with in-cell capacitive type touch sensors which amplify
voltage change caused by capacitive coupling between the sensor
electrode and an input object (userʼs ﬁnger).
----- Break ----15:00 - 16:20

Room 502

INP2: Touch Panel (2)Chair:
Co-Chair:S. Yoon, LG Display, Korea
H. Haga, NEC LCD Techs., Japan

INP2 - 1:
15:00

Invited The Golden Age of Touch Digital life on
One’s Fingertip
S. YoonLG Display, Korea

Touch has been certainly popularized. None of touch technologies is
yet perfect but it can be said pretty much matured. But in the other
hand, touch at present is only the ﬁrst step and next step should focus
on improving natural human interface.
INP2 - 2
15:20

Low Cost Multi-touch Embedded System
C.-L. Li, J.-S. Liao, H.-H. Chen, W.-T. Tseng, C.-R. Lee
Chunghwa Picture Tubes, Taiwan

Chunghwa Picture Tubes, LTD. (CPT) sets up a low-cost multi-touch
embedded system that all software and drivers are free except the
hardware of this platform. And in this system, multi-touch function is
implemented using resistive multi-touch panel. It is satisﬁed with theresult of the operating efﬁciency of this platform.
INP2 - 3
15:40

Subjective Analysis on Touch Screen Panel Tapping
Properties
J.-H. Lu, Y.-W. Fang, K.-S. Wang, J.-Y. Lee
AU Optronics, Taiwan

For verifying the tapping forces on touch screen panels (TSP), we
conducted subjective experiments. Tapping forces, surface properties
of TSPs and styluses were investigated. Based on the experimental
results, the tapping model of TSP could be established.

206

Wed./Thu.
INP2 - 4
16:00

December 1/2
Low Cost and Easy Manufacturing Flexible
Projective Capacitive Touch Sensing Film
C. J. Liu, G. R. Hu, Y. J. Chen, C. J. Tsai, M. H. Wang,
P. H. Wang, W. J. Chiang, C. P. Kung, J. C. Ho, C. C. Lee
ITRI, Taiwan

An easy process of high quality of projective capacitive touch sensing
ﬁlm is developed by transparence polymer insulating ﬁlm withpatterning ability, high quality and bendable ITO with low resistance,colorless polyimide substrate with thickness less than 30µm. It costs
low by less process time, less expansive equipment.
Author Interviews
18:00 – 19:00

Thursday, December 2
13:20 - 14:40

Room 413

INP3: Imaging System
J. Tanida, Osaka Univ., Japan
S. Itoh, Shizuoka Univ., Japan

INP3 - 1:
13:20

Invited The Impact of a New Camera-System for
Medical-Use on the Display Technologies

INP

Chair:
Co-Chair:Y. IdePixera, USA
No manuscript was submitted.
INP3 - 2:
13:40

Invited A Super Hi-Vision Camera Using Three
33-M-pixel CMOS Image Sensors
T. Yamashita, R. Funatsu, T. Yanagi*, K. Mitani,
T. Yoshida*, Y. Nojiri
NHK, Japan*Hitachi Kokusai Elec., JapanWe developed worldʼs-ﬁrst camera system that can capture fullresolution Super Hi-Vision images (7680 4320/59.94p, R/G/B-4:4:4).
For this system, we also developed a 33-million-pixel CMOS image
sensor, an ultra-high-resolution lens, and a signal-processing forcorrecting lens chromatic aberration in real time. As a result, thelimiting resolution was achieved 4,320 TV lines.

207Thursday
INP3 - 3:
14:00

December 2
Invited Multi-Dimensional Data Acquisition Using a
Compound-Eye Imaging System
J. Tanida, R. Horisaki, K. Kagawa
Osaka Univ., Japan

Effective methods for multi-dimensional data acquisition are developed
using a compound-eye imaging system. The images captured byommatidia contain multi-dimensional information of the object, andproper processing extracts the information. As applications related tomulti-dimensional data acquisition, long-distance observation, focus
extension, and generalized sampling are presented.
INP3 - 4
14:20

A 5-bit qVGA CMOS Image Sensor for OpticalSensor Array in OLED-on-Silicon (OLEDoS)
K. Min, D. Lee*, C. Yoo
Univ. of Hanyang, Korea*Hynix Semiconductor, Korea

An optical sensor array and its readout circuit for OLED-on-silicon(OLEDoS) are described. A qVGA optical sensor array is implemented
on a 0.4 inch VGA OLED pixel array in a 0.18 um CMOS process. A
5-bit single-slope analog-to-digital converter with delta reset scheme isadopted for optical sensor readout circuits.
----- Break ----15:00 - 16:20

Room 413

INP4: 3D Interactive System
Chair:
Co-Chair:T. Komuro, Univ. of Tokyo, Japan
N. Hashimoto, Citizen, Japan

INP4 - 1:
15:00

Invited Vision-Based 3D Input Interface Technologies
T. KomuroUniv. of Tokyo, Japan

Vision-based user interfaces are technologies where human motion isdetected by a camera or cameras and is used as input. In this paper
we describe advantages and disadvantages, technological issues, andrelated research of vision-based user interfaces as well as examples of
3D input interface systems that we developed.
INP4 - 2:
15:20

Invited Tactile Interaction with 3D Images
H. Shinoda
Univ. of Tokyo, Japan

In this talk, our project on non-contact tactile display is introduced.
Radiation pressure by convergent airborne ultrasound beams produces
tactile sensations on bare skins, without installing bulky mechanicalarms or forcing people to hold/wear special devices. Combining thetactile display with 3D images, we can realize literally touchable 3D
images.
208

Thursday
INP4 - 3:
15:40

December 2
Invited A system for Holographic Display without
Interference Measurement
K. Nitta
Kobe Univ., JapanA three-dimensional (3D) image system based on multi vision imaging
and wavefront reconstruction is reported. One of the features inour research is to use graphic processing units (GPU) for signal
processing. It is shown that the GPU is effective for large scale
information processing required in the 3D system.
INP4 - 4:
16:00

Invited High Density Directional Ray Scan System
for Autostereoscopic Displays
Y. Momonoi, M. Sekine*, T. Saishu*, Y. Yamauchi*
Toshiba Visual Prods., Japan*Toshiba, Japan

We introduce a newly developed prototype of a ray scan system for an
autostereoscopic display system. This system synthesizes various 3-D
images to acquire high-density multiple light rays. One application ofthis system is capture of birds-eye-view photographic content suitable
for a ﬂatbed autostereoscopic display.

INP

Author Interviews
18:00 – 19:00

Asia Display 2011
Kunshan, China

IDW Tutorial in Japanese
Tuesday, November 30, 2010
Room 412
Fukuoka International Congress Center
Detailed information is announced at
http://www.sidchapters.org/japan/
209

Wednesday

December 1

Topical Session on Lighting Optics,
Devices and Systems
Wednesday, December 1
13:20 - 14:25

Room 409

LIT1: LED Light Source Technologies
Chair:
Co-Chair:

K. Käläntär, LEIZ Advanced Tech., JapanK. Hara, Shizuoka Univ., Japan

LIT1 - 1:
13:20

Invited Recent Developments and Future Prospectsof LED Technologies for Displays and General
Lighting
H. Amano
Nagoya Univ., JapanAn overview of the progress of GaN-based blue light emitting diode(LED) chips will be discussed. Several groundbreaking technologies bywhich various efﬁciencies were considerably improved will be shown. In
addition, recent progress of UV/DUV LEDs and future prospects of the
progress of visible long-wavelength LEDs will be explained.
LIT1 - 2
13:45

Integration of Imprinting with Rellector for
Designing High Efficiency Street-Lamp Module
J.-W. Pan, S.-H. Tu*, C.-W. Fan, S.-H. Lin, J.-Y. Huang,
C.-S. WangNat. Chiao Tung Univ., Taiwan*Genesis Photonics, Taiwan

A cost effective, high throughput, and high yield method for street lamp
was proposed in this paper. We integrated the imprinting technology
and the reﬂective optical element to improve the conventional street
lamp. The novel design has 40% enhancement in illumination intensity,
the uniform illumination and the glare effect elimination.
LIT1 - 3

Withdrawn

LIT1 - 4

Withdrawn

210

Wednesday
LIT1 - 5L
14:05

December 1
Photoconductivity in Silicon Rich Silicon Nitride
Films Containing Silicon Nanocrystals Prepared by
Catalytic CVD
K.-M. Lee*, J.-D. Hwang*, Y.-J. Lee*, K.-S. Kuem*,
K.-S. No*, K. S. Yoon**, S. H. Yang**, W.-S. Hong**Univ. of Seoul, Korea**Samsung Elect., Korea

We fabricated metal-insulator-semiconductor (MIS) capacitors and
p-i-n diodes using silicon rich silicon nitride (SRSN) ﬁlm containing
silicon nanocrystals (Si NCs) prepared by catalytic chemical vapor
deposition (Cat-CVD). Photo/dark current difference and photo/darkhysterisis appeared in the current-voltage (I-V) and the capacitancevoltage (C-V) curves, respectively.
----- Break ----15:00 - 16:20

Room 409

LIT2: Backlight
Chair:
Co-Chair:Organizer:

K. Käläntär, LEIZ Advanced Tech., Japan
M. Shinohara, Omron, Japan
FMC-WS

LIT2 - 1
15:00

Ultra-Slim 7-in. Light-Guide Plate using Roll-to-Roll
UV Embossing Process
Y.-Y. Chang, G.-H. Liu*, C.-J. Ting, T.-H. Lin, C.-L. Fu,
H.-H. Lin, J.-H. Tsai
ITRI, Taiwan*Epoch Chemtronics, Taiwan

LIT2 - 2
15:20

Highly-Collimating Backlighting Systems with
Multi-Stacked and Multi-Layered Optical Sheets
Y.-Y. Chang, T.-H. Lin, C.-L. Fu, C.-F. Lan, R.-H. Tsai,
H.-H. Lin, J.-H. Tsai
ITRI, Taiwan

We proposed a highly-collimating backlighting system with multistacked optical sheets. The optical components can be fabricated byultra-precision diamond tooling and UV embossing. A best FWHM of 6
degree is realizable in an optimized manufacturing process.

211

LIT

We proposed a 7-in. ultra-slim LGP fabricated by R2R UV embossing
process which has the advantage of high throughput and highmicrostructural transfer rate. The surface plasma treatment is applied
to enhance the adhesion. A 0.42 mm prototype with outcoupling
etching-dots is achieved with its uniformity more than 70%.

Wed./Thu.
LIT2 - 3
15:40

December 1/2
Thermal Network Analysis of Edge-Type LED
Backlight
K. Misono
Miyakonojo Nat. College of Tech., JapanWe developed a thermal network model of edge-type LED backlight.
The effects of various design parameters of the backlight on thejunction temperature of LED were analyzed by using the L18
orthogonal array. The important design parameters to reduce thejunction temperature were clariﬁed.
LIT2 - 4
16:00

Analysis of Luminous Flux Measuring Methods for
Flat Lightings
E. Lee, S.-J. Choi, J.-W. Bae, O.-K. Song, S. Lee,
H.-K. Chung
Samsung Mobile Display, Korea

R&D for so-called eco-friendly lightings like OLED lamps is rapidly
progressing. New devices having ﬂat-panel-shape require different
measuring method from conventional ones. Several different measuringmethods are analyzed for ﬁnding appropriate method for ﬂat lightings.
The analysis will be helpful to evaluate and standardize measuringmethod for ﬂat lightings.
Author Interviews
18:00 – 19:00

Thursday, December 2
10:40 - 11:50

Room 413

LIT3: Phosphors for Lighting
Chair:
Co-Chair:Organizer:

K. Ohmi, Tottori Univ., JapanR. J. Xie, NIMS, Japan
PH-WS

LIT3 - 1:
10:40

Invited Preparation and Luminescence of Novel
Oxysulfide Phosphors for White Light LEDs
T.-M. Chen, T.-W. Kuo
Nat. Chiao Tung Univ., Taiwan

Two unprecedented phosphors, CaZnOS:Eu2+ and Sr8Al12O24S2:Eu2+,
were prepared and investigated. The PL spectra of both reveal a broad
emission band extending from 550 to 700 nm under blue light pumping.
Both phosphors exhibit superior luminescence stability than SrS:Eu2+ inthermal quenching up to 120℃ and great potential for LED application.

212

Thursday
LIT3 - 2
11:10

December 2
Luminance Improvement of EL Devices Using
ZnS-Phosphors Sintered by Vacuum Microwave
Process
N. Taguchi, S. Horiguchi*, Y. Uraoka*
Image Tech, Japan*Nara Inst. of S&T, Japan

We improved the luminance of EL devices using ZnS phosphorssintered by the new microwave method that original ZnS powders
were previously given mechanical damages to enhance the diffusionof activators inside ZnS. The EL devices dispersed with other inorganic
phosphors gave more enhanced luminance and change of luminescentcolor.
LIT3 - 3
11:30

Electric Field Effect by Using Thermal Annealing
Process for Inorganic Electroluminescent Devices
Y.-H. Chien, K.-F. Chen, C.-C. Chang, M.-Y. Chuang,
J.-C. Ho, Y.-Y. Chang, C.-C. Lee, F.-H. Wang*, C.-S. Ho*
ITRI, Taiwan*Nat. Chung Hsing Univ., Taiwan

This work proposes a novel inorganic electroluminescent (IEL) device
with a built-in electric charge (BIEC) layer which is called EFBI-PDEL
device. Using thermal anneal process to improve device performance
under same driving condition: reduce turn-on voltage form 80 V to 35 V,
increase brightness form 269.2 nits to 397.3 nits.
----- Lunch ----13:20 - 14:25

Room 409

Chair:
Co-Chair:Organizer:

P. Rudy, Kaai, USA
K. Takeda, Seiko Epson, Japan
PRJ-WS

LIT4 - 1:
13:20

Invited State-of-the-Art Continuous-Wave InGaN
Laser Diodes in the Violet, Blue, and Green
Wavelength Regimes

LIT

LIT4: Solid State Projection Light Source

J. W. Raring, M. C. Schmidt, C. Poblenz, Y.-C. Chang,
B. Li, M. Mondry, R. Craig, P. Rudy, J. S. Speck,
S. P. DenBaars, S. Nakamura
Soraa, USA
We present state-of-the-art performance from green, blue, and violet
InGaN laser diodes fabricated on nonpolar and semipolar GaN
substrates. Using these novel orientations, we demonstrate high power,
high efﬁciency, continuouswave operation from single-lateral-mode
electrically pumped laser diodes from 405 nm to 525 nm, including
over 60 mW at 520 nm.

213Thursday

December 2

LIT4 - 2

Withdrawn

LIT4 - 3
14:05

RGB Laser Light Source Module with High
Efficiency for Large Screen Projectors
A. Furukawa, K. Takahashi, K. Murakami, Y. Maeda,
M. Oka*, K. Kimura*, T. Mochizuki*, M. Suzuki*,N. Eguchi*Sony Manufacturing Syss., Japan*Sony, Japan

A compact and high power laser module with output of 10, 6, and 5
watts for the red green and blue wavelengths has been developed. Thevery high efﬁciency of 18% in electro-optical conversion ratio makes it
an attractive light source in substitution to xenon lamps for large screen
projectors.
Author Interviews
18:00 – 19:00

IDW ’11
The 18th International Display Workshops
December 7-9, 2011
Nagoya Congress Center
Nagoya, Japan
http://www.idw.ne.jp214

IDW '10 COMMITTEESORGANIZING COMMITTEE

General Chair:
General Vice-Chair:Representative (ITE):		
Representative (SID):		Standing:
		
		
		
		
		
		
		
		
Auditor:K. Betsui
Y. Yamamoto
T. AokiT. Miyashita
K. Kondo
Y. Shimodaira
M. DateR. Hattori
N. Ibaraki
S. Mikoshiba
H. Mori
S. Naemura
H. Sakurai
T. Shiga
T. Suzuki
T. Komaki

Hitachi
Sharp
Tohoku Univ.
Tohoku Univ.
Sharp
Shizuoka Univ.
NTT COMWARE
Kyushu Univ.
AIST
APDC
FUJIFILM
Tottori Univ.
Asahi Glass
Univ. of Electro-Commun.
ZEON
Panasonic

OVERSEAS ADVISORS

Overseas Advisor:
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		

M. Anandan
Organic Lighting Techs. LLC, USA
J. H. Burroughes Cambridge Display Tech., UK
N. Fruehauf
Univ. of Stuttgart, Germany
M.-K. Han
Seoul Nat. Univ., Korea
Philips Res., the Netherlands
I. Heynderickx
J. Jang
Kyung Hee Univ., Korea
Hong Kong Univ. of S&T, Hong Kong
H.-S. Kwok
T. Lowe
Lambent Consultancy, UK
F.-C. Luo
AU Optronics, Taiwan
M.-H. Oh
Dankook Univ., Korea
J.-N. Perbet
THALES AVIONICS, France
I. Sage
QinetiQ, UK
K. R. Sarma
Honeywell Int., USA
Nat. Chiao Tung Univ., Taiwan
H.-P. D. Shieh
D. Theis
Tech. Univ. Munich, Germany
L. F. Weber
Consultant, USA

EXECUTIVE COMMITTEE

Executive Chair:
N. Ibaraki
Executive Vice-Chair:
H. Mori		
T. Shiga
Program Chair:
R. Hattori
Program Vice-Chair:
M. Date		
T. Miyashita
Program Secretary:
H. Fujikake		
M. Kimura		
H. Okumura
		
M. Shinohara
Publication Chair:
K. Takatori
Publication Vice-Chair: M. Suzuki
Publication:
K. Hara		
H. Kawamura
		
S. Komura
Local Arrangement Chair: H. Sakurai
Local Arrangement Vice-Chair: T. Komaki
Exhibition Chair:
T. Nagatsuka

AIST
FUJIFILM
Univ. of Electro-Commun.
Kyushu Univ.
NTT COMWARE
Tohoku Univ.
NHK
Ryukoku Univ.
ToshibaOmron
NEC LCD Techs.
Merck
Shizuoka Univ.
NTT
Hitachi Displays
Asahi Glass
Panasonic
Nitto Denko
215

Exhibition:
T. Inoue		
T. Nagata
Financial Supporting Chair: K. Azuma
Financial Supporting Vice-Chair: N. Ibaraki
Treasurer:
T. Shiga		T. Taguchi
General Secretary:
T. Katoh		T. Suzuki
Senior Members:
K. Betsui		M. Omodani		Y. Yamamoto
Members:
H. Arai		
K. Dantani
		
N. Egashira		
H. Inoue		
M. Inoue		
M. Inoue		
M. Inoue		
Y. Ishii		T. Itoh		
H. Kanayama
		S. Kaneko
		M. Kano		
K. Kobayashi
		
S. Kobayashi		
M. Koden		
S. Kojima		Y. Komiya		
S. Kondoh		
H. Kuma		
K. Matsuhiro		
S. Matsuyama
		S. Mikoshiba		S. Naemura
		Y. Nishimura		
H. Ohnishi		
S. Okabayashi		T. Okimura		
A. Sasaki		T. Shinoda
		
S. Shiwa
		T. Sugiura		
M. Sumitomo		K. Suzuki		
H. Takanashi		K. Takeuchi		
Y. Takiguchi		Y. Toko		Y. Tsuchiya		M. Tsumura
		T. Uchida		M. Uchidoi		
H. Uchiike
		S. Uemura		T. Ushiki		T. Yamada216

Economic Prom. Bureau, Fukuoka City
Prom. Acad. City by Kyushu Univ.
Shimadzu
AIST
Univ. of Electro-Commun.
Toppan Printing
ZEON
ZEON
HitachiTokai Univ.
Sharp
FPD NetATMI Japan
DNP
Hitachi High-Tech.
Chimei Innolux
Mitsubishi Elec.
Toyo
Sharp
Corning Holding Japan
Sanyo Elec.
NEC LCD Techs.
Alps Elec.
Mitsubishi Elec.
Tokyo Univ. of Sci., Yamaguchi
Sharp
OptrexOlympus Optical
CitizenIdemitsu Kosan
Arisawa Manufacturing
Hitachi Displays
APDC
Tottori Univ.
AKT
Ehime Univ.
Meijyo Univ.
NTT
Kyoto Univ.
Shinoda Plasma
Tokyo Denki Univ.
IDM
NichiaToshiba
Sony
DIC
Ricoh
Stanley Elec.
NHK
HitachiSendai Nat. College of Tech.
Panasonic
Noritake
Seiko Epson
Sumitomo Chem.

		
		
		
		

Y. Yanagi
Y. YodaH. Yokoyama
M. Yuki

Mitsubishi Heavy Ind.
Otsuka Elec.
Kent State Univ.
Asahi Glass

WORKSHOP/TOPICAL SESSION CHAIR

LCT
AMD
FMC
PDP
PH
FED
OLED
3D
VHF
PRJ
EP
MEET
DES
FLX
INP
LIT

K. Ishikawa
K. Takatori
R. Yamaguchi
H. Kajiyama
Y. Nakanishi
M. Takai
Y. Kijima
S. YanoY. Shimodaira
K. Takeda
A. Suzuki
M. Nakamoto
H. Okumura
H. Fujikake
H. Okumura
K. KäläntärPROGRAM COMMITTEE

Program Chair:
Program Vice-Chair:
Program Secretary:
		
		
		
		
Committee:
LCT
AMD
FMC
PDP
PH
FED
OLED
3D
VHF
PRJ
EP
MEET
DES
FLX
INP
LIT

Tokyo Inst. of Tech
NEC LCD Techs.
Akita Univ.
Hiroshima Univ.
Shizuoka Univ.
Osaka Univ.
Sony
NICT
Shizuoka Univ.
Seiko Epson
Ricoh
Shizuoka Univ.
ToshibaNHK
Toshiba
Leiz Advanced Tech.

R. Hattori
M. DateH. Fujikake
M. KimuraT. Miyashita
H. Okumura
M. Shinohara

Kyushu Univ.
NTT COMWARENHK
Ryukoku Univ.
Tohoku Univ.
ToshibaOmron

K. Ishikawa
M. Kimura
M. Shinohara
M. Uchidoi
N. Miura
H. Mimura
T. Inoue
M. Tsuchida
K. Masaoka
T. Hayashi
T. Fujisawa
Y. NakaiK. Sekiya
T. Furukawa
I. Fujieda
K. HaraTokyo Inst. of Tech.
Ryukoku Univ.
Omron
Panasonic
Meiji Univ.
Shizuoka Univ.
TDK
NTT
NHK
3M
DIC
Toshiba
Tohoku Univ.
Kyodo Printing
Ritsumeikan Univ.
Shizuoka Univ.

Workshop on LC Science and Technologies

Workshop Chair:
Program Chair:
Program Vice-Chair:		General Secretary
Program Committee:				K. Ishikawa
K. Ishikawa
M. Suzuki
S. Komura
M. Inoue
H. Amakawa
H. Fujikake
M. Funahashi

Tokyo Inst. of Tech.
Tokyo Inst. of Tech.
Merck
Hitachi Displays
Toyo
Citizen Seimitsu
NHK
Kagawa Univ.

217

		
		
		
		
		
		
		
		
		
		
		

T. Ishinabe
M. Kimura
A. Kubono
K. Miyachi
I. Nishiyama
T. NoseH. Okada
M. OzakiT. Takahashi
T. Yamaguchi
H. WakemotoWorkshop on Active Matrix Displays

Workshop Chair:
Program Chair:
Program Vice-Chair:
General Secretary:
Program Committee:
		
		
		
		
		
		
		
		
		
		
		
		

K. Takatori
M. Kimura
K. NomotoY. Fujisaki
K. Azuma
E. Fortunato
H. Hamada
M. Hiramatsu
S. Hirota
S. Horita
A. Hoshino
M. Inoue
H. J. Kim
H. Kumomi
N. Morosawa
T. Noguchi
Y.-H. Yeh

Tohoku Univ.
Nagaoka Univ. of Tech.
Shizuoka Univ.
Sharp
DIC
Akita Pref. Univ.
Univ. of Toyama
Osaka Univ.
Kogakuin Univ.
Chisso Petrochem.
Toshiba Mobile Display
NEC LCD Techs.
Ryukoku Univ.
Sony
NHK
Shimadzu
New Univ. of Lisbon
Sanyo Elec.
Toshiba Mobile Display
Hitachi Maxell
JAIST
Sharp
Chimei Innolux
Yonsei Univ.
Canon
Sony
Univ. of the Ryukyus
ITRI

Workshop on FPD Materials and Components

Workshop Chair:
Program Chair:
General Secretary:
Program Committee:
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		
218

R. Yamaguchi
M. Shinohara
Y. Saitoh
S. Asari
K. Dantani
K. Fujishiro
T. Hayashi
T. Hotta
Y. IimuraY. Mizushima
K. Käläntär
T. Katoh
C.-C. Lee
M. Miyatake
N. Miyatake
K. Miyazawa
K. Niwa
T. Nonaka
H. Sakurai
M. Shida
K. Shimamura
F. Shimo
T. Takeda
T. Tomono
Y. UkaiT. Unate

Akita Univ.
Omron
FUJIFILMULVACATMI Japan
Nippon Steel Chem.
3M
DNP
Tokyo Univ. of A&T
Corning Holding Japan
Leiz Advanced Tech.
ZEON
ITRI
Nitto Denko
Mitsui Eng. & Shipbuilding
ChissoJSRAZ Elec. Materials
Asahi Glass
TOK
Mitsui Eng. & Shipbuilding
Tokyo Electron
Nagase ChemteX
Toppan Printing
UDDI
Sekisui Chemical		

Y. Yang

Workshop on Plasma Displays

Workshop Chair:
Program Chair:
General Secretary:
Program Committee:
		
		
		
		
		

H. Kajiyama
M. Uchidoi
T. Shiga
S. Mikoshiba
R. Murai
Y. Murakami
T. Nagatomi
Y. Nakao
T. Shinoda

Sony
Hiroshima Univ.
Panasonic
Univ. of Electro-Commun.
APDC
PanasonicNHK
Osaka Univ.
Asahi Glass
Shinoda Plasma

Workshop on EL Displays and Phosphors

Workshop Chair:
Program Chair:
General Secretary:
Program Committee:
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		
		

Y. Nakanishi
N. Miura
N. Matsuda
K. Hara
T. Hisamune
S. ItohD. Y. Jeon
M. Katayama
H. Kobayashi
T. Kusunoki
T. Miyata
M. Niboshi
K. OhmiS. Okamoto
S. Oshio
D. Poelman
M. Shiiki
M. Sumitomo
K. WaniR. J. Xie
H. Yamamoto

Shizuoka Univ.
Meiji Univ.
Toshiba
Shizuoka Univ.
Kasei Optonix
FutabaKAIST
Denso
Tottori Univ.
Sony
Kanazawa Inst. of Tech.
Sharp
Tottori Univ.
NHK
Panasonic
Ghent Univ.
HitachiNichia Chem. Ind.
TAZMO
NIMS
Tokyo Univ. of Tech.

Workshop on Field Emission Display and CRT

Workshop Chair:
Program Chair:
General Secretary:
Program Committee:
		
		
		
		
		
		

M. Takai
H. Mimura
M. Namba
T. Asano
Y. Gotoh
J. Ishikawa
K. Koga
M. Nagao
M. Nakamoto
S. Okuda

Workshop on Organic LED Displays

Workshop Chair:
Program Chair:
Program Vice-Chair:
General Secretary:
Program Committee:
		
		
		
		
		

Y. Kijima
T. Inoue
T. Wakimoto
S. Naka
C. Adachi
M. Akiyama
S. Aratani
Y. Fujita
R. Hattori
T. Ikuta

Osaka Univ.
Shizuoka Univ.
NHK
Kyusyu Univ.
Kyoto Univ.
Chubu Univ.
Panasonic Shikoku Elect.
AIST
Shizuoka Univ.
Nitta
Sony
TDK
Merck
Univ. of Toyama
Kyushu Univ.
Toshiba
Hitachi
Sharp
Kyushu Univ.
Chisso Petrochem.
219

		
		
		
		
		
		
		
		
		
		

H. Kuma
A. Mikami
T. Miyadera
H. Miyazaki
K. Monzen
H. Murata
K. Nakayama
Y. SatoS. Tokito
K. Yasukawa

Idemitsu Kosan
Kanazawa Inst. of Tech.
Pioneer
Nippon Steel Chem.
Nissan Chem. Inds.
JAIST
Yamagata Univ.
JST
Yamagata Univ.
Seiko Epson

Workshop on 3D/Hyper-Realistic Displays and Systems

Workshop Chair:
Program Chair:
General Secretary:
Program Committee:
		
		
		
		
		
		
		
		

S. YanoM. Tsuchida
K. Yamamoto
T. Fujii
T. Koike
K. Mashitani
T. Mishina
S. Ohtsuka
J.- Y. Son
C.-H. Tsai
M. Tsuboi
H. Yamamoto

NHK
NTT
NICT
Tokyo Inst. of Tech.
HitachiSanyo Elec.
NHK
Kagoshima Univ.
Daegu Univ.
ITRI
NTT DoCoMo
Univ. of Tokushima

Workshop on Applied Vision and Human Factors

Workshop Chair:
Program Chair:
General Secretary:
Program Committee:
		
		
		
		
		
		
		
		
		
		
		

Y. ShimodairaK. Masaoka
T. Matsumoto
J. Bergquist
S. Clippingdale
N. Hiruma
M. Idesawa
H. Isono
S. Kubota
T. Kurita
T. Mitsuhashi
J. Someya
T. Tamura
T. WakeR. Yoshitake

Shizuoka Univ.
NHK
Sony
Nokia
NHK
NHK
Univ. of Electro-Commun.
Nippon Inst. of Tech.
Seikei Univ.
NICT
Shobi Univ.
Mitsubishi Elec.
Tokyo Polytech. Univ
Kanagawa Univ.
IBM Japan

Workshop on Projection and Large-Area Displays and Their
Components

Workshop Chair:
Program Chair:
Program Vice-Chair:		General Secretary:
Program Committee:
		
		
		
		
		
		
		
		

220

K. Takeda
T. Hayashi
H. Kikuchi
S. Shikama
T. Suzuki
O. Akimoto
Y. Asakura
Y. Fushimi
H. Kanayama
S. Koike
Y. Moromizato
H. NakanoT. Ogura
K. Ohara

Seiko Epson
3M
NHK
Setsunan Univ.
JVC KENWOOD Holdings
Sony
Nittoh Kogaku
Panasonic
Sanyo Elec.
Seiko Epson
Techno Syss. Res.
Barco
Panasonic
Texas Instr. Japan

		
		
		
		
		

S. OuchiM. SakaiH. Sugiura
Z. Tajima
M. TakasoWorkshop on Electoronic Paper

Workshop Chair:
Program Chair:
General Secretary:
Program Committee:
		
		
		
		
		
		
		
		
		

A. Suzuki
T. Fujisawa
H. Arisawa
M. Higuchi
Y. Hotta
T. Kitamura
S. Maeda
Y. Masuda
M. Omodani
N.-S. Roh
Y. Toko
M. Tsuchiya
G. F. Zhou

Hitachi
Ushio
Mitsubishi Elec.
Mobara Atecs
Techno Syss. Res.
Ricoh
DIC
Fuji Xerox
NIMS
Ricoh
Chiba Univ.
Tokai Univ.
Bridgestone
Tokai Univ.
Samsung Elect.
Stanley Elec.
E-ink
Philips Res.

Workshop on MEMS and Emerging Technologies for Future
Displays and Devices

Workshop Chair:
Program Chair:
General Secretary:
Program Committee:
		
		
		
		
		
		
		
		
		
		
		
		
		
		

M. Nakamoto
Y. NakaiT. Komoda
T. Akinwande
G. Barbastathis
M. Esashi
H. Fujita
J. Jang
H. Kikuchi
J. M. Kim
K. Matsumoto
W. I. Milne
T. Ooasa
S. Sugiyama
H. L. Tuller
S. Uchikoga
J.-B. Yoon
Y. Yoshida

Shizuoka Univ.
Toshiba
Panasonic Elec. Works
MIT
MIT
Tohoku Univ.
Univ. of Tokyo
Kyung Hee Univ.
NHK
SAIT, Samsung Elect.
Olympus
Univ. of Cambridge
Tokyo Electron
Ritsumeikan Univ.
MIT
Toshiba
KAIST
BEANS Lab.

Workshop on Display Electronic Systems

Workshop Chair:
Program Chair:
General Secretary:
Program Committee:
		
		
		
		
		
		
		
		
		
		
		

H. Okumura
ToshibaK. Sekiya
Tohoku Univ.
T. Yamamoto
NHK
T. Fujine
Sharp
S. ItohShizuoka Univ.
K. KäläntärLeiz Advanced Tech.
T. KimApple
M. A. Klompenhouwer Philips Res.
H.-S. Koo
Ming-Hsing Univ. of S&T
O.-K. Kwon
Hanyang Univ.
A. Nagase
Mitsubishi Elec.
H. Nitta
HitachiS. OnoPanasonic
H. Sasaki
Toshiba
S. Takamura
NTT

221

K. Takeuchi

Workshop on Flexible Displays
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

H. Fujikake
T. Furukawa
T. Shiro
H. Hirata
M. Itoh
T. KamataM. Kimura
H. Maeda
Y. Masuda
T. Nagatsuka
K. NomotoT. Ogura
T. Sekitani
T. Tomono
K. Yasukawa

Univ. of Electro-Commun.
NHK
Kyodo Printing
TeijinToray Eng.
Toppan Printing
AIST
Nagaoka Univ. of Tech.
DNP
Bridgestone
Nitto Denko
Sony
Nippon Steel
Univ. of Tokyo
Toppan Printing
Seiko Epson

Topical Session on Touch Panels and Input Technologies
Session Chair:
Program Chair:
General Secretary:
Program Committee:

H. Okumura
I. Fujieda
N. Hashimoto
H. Haga
T. Horie
S. Itoh
H. KatoI. Mihara
Y. Mizushima
T. Nakamura
K. Nakatani
H. Sasaki
A. Suzuki
K. Takatori

Toshiba
Ritsumeikan Univ.
Citizen Holdings
NED LCD Techs.
Wacom
Shizuoka Univ.
Sharp
ToshibaCorning Holding Japan
Toshiba Mobile Display
Touchpanel Labs.
Toshiba
Ricoh
NEC LCD Techs.

Topical Session on Lighting Optics, Devices and Systems
Session Chair:
Program Chair:
General Secretary:
Program Committee:

222

K. Käläntär
K. HaraT. Miyashita
T. Hayashi
T. Inoue
Y. Kijima
N. Matsuda
S. Oshio
M. Shinohara
Y. Yang

Leiz Advanced Tech.
Shizuoka Univ.
Tohoku Univ.
3M
TDK
Sony
Toshiba
Panasonic
Omron
Sony

Evening
Get Together

1F
Exhibition

Poster andAuthor Interviews

2F
Rest Area

FLOOR PLAN

223

224

Keynote and Invited
Addresses

3F

Lobby

4F

Exhibition

Secretariat

Speaker Preparation
Room

5F

FLOOR PLAN

Date

1F Lobby

Tue.,
Nov. 30

IDW ’10 Timetable
Registration
17:00-20:00

Main Hall

Room 204

Room 402

Room 409

Room 412

Room 413

Room 501

Room 502

Poster/A.I. Room

2F Lobby
4F Lobby

Evening Get-Together with Wine at RACONTER (1F)
18:00-20:00
Opening,
KeynoteAddress
10:20-11:15

Wednesday, December 1

Invited Address
11:15-12:00
Lunch
Registration
8:00-18:00

OLED1
13:20-14:50

FLX1
13:20-14:30

LIT1
13:20-14:25

VHF1
13:20-14:50

INP1
13:20-14:40

Break
OLED2
15:00-16:10

FLX2
15:00-16:25

OLED3
16:40-18:05

FLX3/EP1
16:40-18:00

PRJ1
15:00-16:25

LIT2
15:00-16:20

VHF2
15:00-16:20

PH1
15:00-16:40

AMD1
15:00-16:25

INP2
15:00-16:20

AMD2
16:40-17:40

LCT1
16:40-18:05

LCTp
PRJp
EPp
13:20-16:20

Exhibition
12:00-18:00

Break
FMC1
16:40-18:00

VHF3
16:40-18:10

AuthorInterviews
18:00-19:00
BreakBanquet at the Crowne Grand Ball Room (2F) in ANA Crowne Plaza Fukuoka
19:30-21:30
EP2
9:00-10:15

FLX4/OLED4
9:00-10:15

MEET1
9:00-10:25

PRJ2
9:00-10:20

3D1
9:00-10:20

PH2
9:00-10:10

AMD3
9:00-10:20

LCT2
9:00-10:25

3D2
10:40-12:00

LIT3
10:40-11:50

OLED5
10:40-11:50

LCT3
10:40-11:55

INP3
13:20-14:40

PDP1
13:20-14:40

LCT4
13:20-14:40

INP4
15:00-16:20

PDP2
15:00-16:20

LCT5
15:00-16:10

3D3/DES3
16:40-18:00

AMD5/OLED6
16:40-18:05

PH3
16:40-17:50

Thursday, December 2

Break
EP3
10:40-11:55

FLX5/AMD4
10:40-12:10

MEET2
10:40-12:15

PRJ3
10:40-11:55

EP4
13:20-14:25

FLX6
13:20-14:45

MEET3
13:20-14:40

LIT4
13:20-14:25

FMCp
VHFp
DESp
9:00-12:00

Lunch
Registration
8:00-18:00

VHF4/DES1
13:20-14:50
Break

EP5
15:00-16:30

FLX7/FMC6
15:00-16:00

MEET4
15:00-16:20

PRJ4
14:50-16:25

EP6
16:40-18:00

PDP5
17:00-18:00

MEET5
16:40-17:55

PRJ5
16:35-18:00

VHF5/DES2
15:00-16:20

AMDp
PHp
OLEDp
3Dp
13:20-16:20

Exhibition
10:00-18:00

Break
VHF6
16:40-18:00

AuthorInterviews
18:00-19:00
EP7
9:00-10:25

Friday, December 3

Registration
8:00-13:00

LCT6
9:00-10:20

FED1
9:00-10:00

FMC2
9:00-10:20

DES4
9:00-10:00

AMD6
9:00-10:10

VHF7
9:00-10:15

DES5
10:40-12:00

AMD7
10:40-12:00

VHF8/3D4
10:40-12:10

PDP3
13:00-14:40

DES6
13:20-14:40

AMD8
13:20-14:40

3D5
13:20-14:40

PDP4
15:00-16:20

DES7
15:00-16:25

AMD9
15:00-16:05

3D6
15:00-16:20

Break
LCT7
10:40-11:55

FED2
10:40-12:10

FMC3
10:40-12:00

PDPp
FLXp
9:00-12:00
Exhibition
10:00-14:00

Lunch
FED3
13:20-14:40

FMC4
13:20-14:40

FED4
15:00-15:40

FMC5
15:00-16:20

Break

AuthorInterviews
16:20-17:20

IDW ’10 Session Navigator
Location
Keynote& Invited

Main Hall

10:20-12:00
Opening, Keynote &Invited Addresses

Wednesday, Dec. 1
PM

Thursday, Dec. 2
18:00-19:00

AM

Friday, Dec. 3
PM

18:00-19:00

Room 204
LCT

Nanostructured LC
High Performance New Functional LCDs High Performance
LCDs
LC Technology

Photo Alignment
Technology

Room 502
Poster/A.I. Room

PostersPH

FED

Room 501

AM-LCD

System on Panel& Sensing Device

Si TFT*AM-OLED

A.I.

Room 409

Posters*Materials & Components
for Flexible Displays

OLED

Posters

A.I.
Phosphors in General

Posters

INP

OLED Device
Technologies
A.I.

LIT

Field Emitters (1)Field Emitters (2)Field Emitters (3)*AM-OLED
A.I.

3D Display (1)*3D System &Content*3D Human Factors
Posters

Lightness Perception

Color Perception

Color Reproduction*Multi Primary (1)*Multi Primary (2)3D Image Quality

3D Display (2)

A.I.

A.I.

Moving Image Quality& Backlight System
Display Human Factors *3D Human Factors

A.I.

Posters

A.I.

A.I.

Illumination Systems
New Projection
Applications

Room 409
Posters

Laser Projection &Digital Signage &Despeckling Tech. Large Venue Projectors

Pico-Projectors

A.I.

A.I.
Electrophoretic
Displays

Color Electrophoretic Frontier Research for
Displays
e-Paper

Electrochromic
Displays

Electrowetting & LCDs

Cholesteric LCDs

*Flexible Electronic Paper
Posters

A.I.

A.I.

A.I.

Fundamental
Fundamental
Emerging Technologies Components, Process Optical MEMS &Displays & Imaging Components, Process
Device Technologies
Technologies (1)Technologies (2)Room 402

A.I.
*Multi Primary (1)*Multi Primary (2)*3D System &Content

Room 413

Room 409

A.I.

Posters
Holography & 3D
Display

Room 502
Poster/A.I. Room
Room 402

Poster/A.I. Room
Room 413
Room 502
Poster/A.I. Room

A.I.

*Flexible OLED

Room 413

Room 204

Posters

OLED Display
Applications

Poster/A.I. Room
FLX

Protective Layer

A.I.
OLED Soluble
Technologies

Poster/A.I. Room
Room 412
DES

A.I.

FEDs & BLUs
OLED Keynote& Materials

Main Hall

MEET

Materials (2)Emissive Displays &Phosphors
A.I.

Room 204

Room 204
Poster/A.I. Room

Materials (1)Phosphors for LEDs

Room 502
Poster/A.I. RoomEP

Manufacturing
Technologies (2)Picture Quality

Room 502

Poster/A.I. Room

Nanodevice& Oxide TFT
A.I.

High Efficiency

Room 412

PRJ

Oxide TFT (2)A.I.

Panel Configuration

Poster/A.I. Room

VHF

Oxide TFT (1)Protective Layer

Poster/A.I. Room
Room 402
Poster/A.I. Room

Room 412

Organic & Carbon TFT

Manufacturing
Technologies (1)A.I.

Room 501

3D

A.I.

A.I.

Optical Films

Poster/A.I. Room
Room 204
Room 412
Room 501
Poster/A.I. Room
Room 413

Main HallNew LCD Design

A.I.

Room 204

PDP

16:20-17:20*Flexible Active-Matrix
Devices

Poster/A.I. Room

FMC

PM

Emerging LC
Application

A.I.

Room 204
AMD

AM

Posters*Flexible Active-Matrix Flexible Organic TFT *Materials & Components*Flexible OLED
Devicesfor Flexible Displays

Advanced Flexible Printing Fabrication *Flexible Electronic
Display Technologies
Processes
Paper
A.I.

A.I.
Imaging System

Touch Panel (1)Touch Panel (2)LED Light Source
Technologies

Backlight

LCT: Workshop on LC Science & Technologies
AMD: Workshop on Active Matrix Displays
FMC: Workshop on FPD Manufacturing, Materials & Components
PDP: Workshop on Plasma Displays
PH: Workshop on EL Displays & Phosphors
FED: Workshop on Field Emission Display & CRT
OLED: Workshop on Organic LED Displays
3D: Workshop on 3D/Hyper-Realistic Displays & Systems

Posters

A.I.
Solid State Projection
Light Source
Phosphors for Lighting

A.I.

A.I.
VHF: Workshop on Applied Vision & Human Factors
PRJ: Workshop on Projection & Large-Area Displays & Their Components
EP: Workshop on Electronic Paper
MEET: Workshop on MEMS & Emerging Technologies for Future Displays & Devices
DES: Workshop on Display Electronic Systems
FLX: Workshop on Flexible Displays
INP: Topical Session on Touch Panels & Input Technologies
LIT: Topical Session on Lighting Optics, Devices & Systems

Display Quality

Visible Light
Communication
A.I.

3D Interactive System

A.I.

Room 413
Poster/A.I. Room

Display Electronics Low Power Technology
A.I.

A.I.: Author Interviews*: Joint Session

IDW ’10
FINAL PROGRAM

IDW ’10 Secretariat:
c/o Bilingual Group Ltd.
3-3-6 Kudan Minami, Chiyoda-ku
Tokyo 102-0074, Japan
Phone：+81-3-3263-1345
FAX：+81-3-3263-1264
E-mail：idw@bilingualgroup.co.jp