IDW ’07
THE 14TH INTERNATIONALDISPLAY WORKSHOPS

Workshops on• LC Science and Technologies• Active Matrix Displays• FPD Manufacturing, Materials andComponents• CRTs• Plasma Displays• EL Displays and Phosphors• Field Emission Display• Organic LED Displays• 3D/Hyper-Realistic Displays and Systems• Applied Vision and Human Factors• Projection and Large-Area Displays,
and Their Components• Electronic Paper• MEMS for Future Displays
and Related Electron Devices• Display Electronic Systems

Topical Session on• Imaging and Photonic Devices•

Final Program
Sapporo Convention Center
Sapporo, Japan
December 5(Wed) – 7(Fri), 2007

CONTENTS
Program Highlights............................................................................... 6
General Information............................................................................ 10
Hotel and Travel Information............................................................... 13
Plenary Sessions
Wednesday, December 5
IDW ’07 Opening ................................................................................ 20
IDW ’07 Keynote Address .................................................................. 20
IDW ’07 Invited Address ..................................................................... 21
Workshop on LC Science and Technologies
Wednesday, December 5
LCT1 Fast Response LCDs (1) ....................................................... 22
LCT2 Display Measurement............................................................ 23
LCT3 High Performance LCDs........................................................ 24
Thursday, December 6
LCT4 New Materials........................................................................ 25
LCT5 Alignment Process (1) ........................................................... 26
LCT6 Alignment Process (2) ........................................................... 28
LCT7 Novel LCD Modes.................................................................. 29
Friday, December 7
LCTp1 Poster : LCD Modes (1)......................................................... 30
LCTp2 Poster : Novel LCDs .............................................................. 36
LCTp3 Poster : Display Measurement .............................................. 38
LCTp4 Poster : New Materials .......................................................... 40
LCTp5 Poster : Alignment Process (1).............................................. 41
LCTp6 Poster : Alignment Process (2).............................................. 43
LCTp7 Poster : LCD Modes (2)......................................................... 44
LCTp8 Poster : New Applications ..................................................... 48
LCT8 Fast Response LCDs (2) ....................................................... 49
LCT9 Transflective LCDs................................................................. 51
Workshop on Active Matrix Displays
Wednesday, December 5
AMD1 TV Application -LCD vs. OLED- ............................................ 53
AMD2 LCD Application..................................................................... 54
AMD3 Novel Application ................................................................... 55
Thursday, December 6
AMD4/OLED4 Organic TFT & OLED ............................................... 56
AMD5 Organic TFT .......................................................................... 58
AMD6 poly-Si TFT ............................................................................ 59
AMD7 Crystallization ........................................................................ 60
AMD8 SOG & µc-Si TFT .................................................................. 61
Friday, December 7
AMDp Poster : Active-Matrix Display ................................................ 63
AMD9 Oxide-Semiconductor TFT .................................................... 80

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Workshop on FPD Manufacturing, Materials and Components
Wednesday, December 5
FMC1 Manufacturing Technologies (1) ............................................ 82
FMC2 Manufacturing Technologies (2) ............................................ 83
FMC3 Manufacturing Technologies (3) ............................................ 84
Thursday, December 6
FMCp Poster : FPD Manufacturing, Materials & Components.......... 86
Friday, December 7
FMC4 Color Filters ......................................................................... 102
FMC5 Materials .............................................................................. 103
FMC6 Optical Films........................................................................ 104
FMC7 Backlight Systems (1).......................................................... 106
FMC8 Backlight Systems (2).......................................................... 107
Workshop on CRTs
Wednesday, December 5
CRTp Poster : CRT Poster .............................................................. 109
Thursday, December 6
Opening............................................................................................ 109
CRT1 History and Future of CRT................................................... 109
CRT2 CRT Deflection System ....................................................... 110
CRT3 Super Slim CRT................................................................... 111
CRT4 CRT Technologies ............................................................... 112
Workshop on Plasma Displays
Wednesday, December 5
PDPp1 Poster : Plasma Displays (1)............................................... 114
Thursday, December 6
PDPp2 Poster : Plasma Displays (2)............................................... 118
PDP1 Protective Layer (1) ............................................................. 123
PDP2 Protective Layer (2) ............................................................. 124
PDP3 Cell Technology ................................................................... 126
Friday, December 7
PDP4 Driving Technology .............................................................. 127
PDP5 PDP TV................................................................................ 128
Workshop on EL Displays and Phosphors
Thursday, December 6
PHp Poster : Phosphors.................................................................. 131
PH1
Phosphors for FEDs, LEDs & Lighting................................. 139
PH2
Phosphors for EL................................................................. 140
Friday, December 7
PH3
Synthesis & Theory of Phosphors ....................................... 141
PH4
Phosphors for PDPs ............................................................ 142
Workshop on Field Emission Display
Friday, December 7
Opening............................................................................................ 144
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FED1 FEDs & Novel Devices ........................................................ 144
FED2 CNT Emitters for FEDs (1) .................................................. 145
FED3 CNT Emitters for FEDs (2) .................................................. 147
FED4 FE Materials & Structures ................................................... 148
FED5 FE Materials & Devices ....................................................... 150
Workshop on Organic LED Displays
Wednesday, December 5
OLED1 Display ............................................................................. 151
OLED2 Process............................................................................ 152
OLED3 Material ............................................................................ 153
Thursday, December 6
AMD4/OLED4 Organic TFT & OLED ............................................. 154
OLEDp Poster : OLED Poster ......................................................... 156
Workshop on 3D/Hyper-Realistic Displays and Systems
Thursday, December 6
3Dp
Poster : 3D and Hyper Realistic Display............................... 167
Opening............................................................................................ 168
3D1Hyper Realistic Display and Acquisition Systems ............... 168
Friday, December 7
3D2
3D Display ........................................................................... 169
3D3Holography .......................................................................... 171
3D4
Human Factor and 3D Display............................................. 172
Workshop on Applied Vision and Human Factors
Thursday, December 6
VHF1 Motion Blur .......................................................................... 174
VHF2 Color Breakup...................................................................... 175
VHFp Poster : Applied Vision and Human Factors ......................... 176
Friday, December 7
VHF3 Display Image Quality.......................................................... 180
VHF4 Moving Image Quality.......................................................... 181
VHF5 Color ................................................................................ 182
VHF6 Display Characteristics & Vision.......................................... 183
Workshop on Projection and Large-Area Displays,
and Their Components
Thursday, December 6
LADp Poster : Projection................................................................. 185
Friday, December 7
LAD1 Projection Components and Systems ................................. 185
LAD2 Solid State Lightsources...................................................... 187
Workshop on Electronic Paper
Wednesday, December 5
EP1
Electronic Paper (1) ............................................................. 189
EP2Electronic Paper (2) ............................................................. 190
EP3Electronic Paper (3) ............................................................. 191
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Thursday, December 6
EP4Electronic Paper (4) ............................................................. 192
EPp
Poster : Electronic Paper...................................................... 193
Workshop on MEMS for Future Displays andRelated Electron Devices
Thursday, December 6
Opening............................................................................................ 195
MEMS1 Displays and Imaging (1) ................................................. 195
MEMS2 Displays and Imaging (2) ................................................. 196
MEMS3 Emerging MEMS Technologies........................................ 198
MEMS4 Optical MEMS Devices .................................................... 200
MEMS5 Fundamental Mechanism, Materials andProcess Technologies...................................................... 201
Workshop on Display Electronic Systems
Wednesday, December 5
Opening............................................................................................ 203
DES1 High Dynamic Range Display .............................................. 203
DES2 High Quality Image Processing ........................................... 204
DES3 Novel Driver Application ...................................................... 205
Thursday, December 6
DES4 Display System Technology................................................. 207
DES5 Late News Papers ............................................................... 208
DESp Poster : Display Electronic Systems ..................................... 209
Topical Session on Imaging and Photonic Devices
Wednesday, December 5
IPDp Poster : Imaging and Communication Devices ...................... 213
Friday, December 7
Opening............................................................................................ 214
IPD1 Nonlinear Phenomena and Communication Devices .......... 214
IPD2 New Imaging and Other Topics ........................................... 215
IDW ’07 COMMITTEES.................................................................... 218
Floor Map ......................................................................................... 227
IDW ’07 Timetable
IDW ’07 Session Navigator

4

EXHIBITION
13:00–17:00
9:00–17:00
9:00–14:00

Wednesday, Dec. 5
Thursday, Dec. 6
Friday, Dec. 7

Main Hall C
Sapporo Convention CenterFree admission with your registration name tag.

BANQUET
Wednesday, December 5
19:30–21:30
Palace Ballroom (3F)
Sheraton Sapporo HotelSee page 10 for details

IDW Best Paper Award
This new award will go to the most outstanding
paper selected from those presented at IDW ’07.
The 2007 award winners will be announced on the
IDW web site:
http://www.idw.ne.jp/award.html

IDRC ’08
November 3-6, 2008
Orlando, FL, U.S.A

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PROGRAM HIGHLIGHTS
Scientific and technological advances in research and development on
information displays will be found at the 14th International Display
Workshops (IDW ’07). IDW ’07 will present “IDW Best Paper” awards
starting this year in addition to the existing IDW outstanding poster
paper award. A feature of the IDW ’07 is an integration of the following
fourteen workshops and one topical session.
Workshops on• LC Science and Technologies• Active Matrix Displays• FPD Manufacturing, Materials and Components• CRTs• Plasma Displays• EL Displays and Phosphors• Field Emission Display• Organic LED Displays• 3D/Hyper-Realistic Displays and Systems• Applied Vision and Human Factors• Projection and Large-Area Displays, and Their Components• Electronic Paper• MEMS for Future Displays and Related Electron Devices• Display Electronic Systems
Topical Session on• Imaging and Photonic Devices
The three-day conference will feature 633 papers, including 2 keynote
addresses, 2 invited addresses, 84 invited papers, 206 oral and 339
poster presentations including 91 late-news papers. Following keynote
and invited addresses in the Wednesday morning, presentations will
begin and continue in six parallel sessions through Friday. Poster sessions and author interviews will enable participants to discuss presented
issues in detail. Exhibitions from display and related industries will also befeatured from Wednesday to Friday in parallel with workshops and topicalsession. The IDW ’07 should be of interest not only to researchers andengineers, but also to those who manage companies and institutions in
the display community.

Workshop on LC Science and Technologies (LCT)
Recent advances in LC materials and device technologies are presented. The sessions cover from fundamental studies to recent development in LCD technologies. New LC materials & modes, LC alignment
processes, display measurement, transflective LCDs, fast response
LCDs, high performance LCDs and new applications are discussed.

Workshop on Active Matrix Displays (AMD)Now, we open the door to a new era. We serve fruitful opportunities todevelop your intellectual curiosity with interesting invited talks and contributed papers. This workshop covers various applications: LCD and
OLED for TV, novel applications, etc. Moreover, this workshop includes
TFT technologies: organic TFT, poly-Si TFT, crystallization, SOG, µc-Si
TFT, oxide-semiconductor TFT, etc. Let’s discuss latest progress inactive matrix displays and TFT technologies.

Workshop on FPD Manufacturing, Materials and Components(FMC)
This workshop includes 9 invited papers dealing with the overview oftechnical trends and the new related technologies on FPDs. In the techni6

cal sessions, papers deal with optical components such as optical films
and color filters, backlight systems, manufacturing technologies, measurement systems for FPDs. This year, special topics of nano- and environment-friendly technologies for FPDs will be also presented.

Workshop on CRTs (CRT)This year, the Workshop of CRTs is planning an exhibition of the CRT
history including the replica of the world’s first television, designed by
Prof. Takayanagi 81 years ago, next to the latest products. In the sessions, also the future of the CRT, especially Super Slim CRTs, will be
discussed.

Workshop on Plasma Displays (PDP)
About 50 papers pursue these aims from the viewpoints of discharge
cell and driving technology, PDP-TV and electron emissive layer about
MgO physics, process and alternative materials. The “highest-light” of
the workshop would be an invited talk given by Panasonic (Matsushita),
who will introduce the $2.8B factory which will start producing 1M sets/mo (42”-equivalent) in May 2009. The factory substantially reduces the
fixed manufacturing cost. General trends on new materials and technologies will also be discussed. Pioneer will be presenting another spotlighted paper, in which a new priming electron source will be revealed.
Together with the crystal emissive layer introduced previously, the Pioneer PDP is now able to express appealing low luminance images indark background. The progress of PDP phosphor will be presented in
PH workshop.

Workshop on EL Displays and Phosphors (PH)This workshop covers the latest R&D achievement in inorganic ELDs,
phosphors for emissive displays and solid-state illumination as well as
LEDs. Invited talks present phosphors for LEDs, EL TV, Flexible ELD,
new FED-blue phosphor, nanophosphors and computational approachfor phosphors. Contributed papers also include interesting topics such as
luminescent mechanism, synthesis techniques for phosphors, thin-film
phosphors and new phosphor materials for ELDs, FEDs, LEDs and
PDPs.

Workshop on Field Emission Display (FED)
Recent progresses in various field emission displays equipped with carbon nanotube (CNT) field emitter arrays are presented. Field emission
characteristics of high-efficiency electron device (HEED) equipped withactive-matrix driving circuits, and various field emitter materials, such as
CNTs, ZnO, transition metal nitride and nanocrystalline silicon, are also
discussed.

Workshop on Organic LED Displays (OLED)This workshop includes recent developments in OLED materials,
devices and display systems. OLED technologies based on new fullcolor patterning methods are reported, which facilitates AM-OLED tomobile and TV applications. Device architectures to achieve highly efficient emission and novel materials supporting these device technologies are presented.

Workshop on 3D/Hyper-Realistic Displays and Systems (3D)This workshop focuses on recent progress in 3D, holography and related
visual science. It also covers 3D, hyper-realistic image progressing suchas 3D acquisition and high-fidelity color reproduction. Invited talks in thisworkshop include the topics from forefront of 3D/holographic technologies and the recent researches into advanced display systems.

7

Workshop on Applied Vision and Human Factors (VHF)
This workshop provides a forum for discussion of the latest industrial andacademic R&D in the field of applied vision and human factors associatedwith display technology, including methods for improved color reproduction
and the assessment and improvement of the perceived quality of still and,increasingly, moving images. The workshop constitutes a unique opportunity to interact and discuss the latest advances with world-renowned
experts in the field.

Workshop on Projection and Large-Area Displays, and Their
Components (LAD)
The worldwide hottest technologies for projection displays will make thisworkshop exciting. Invited talks will cover advancing technologies ofsolid state light sources including semipolar-oriented InGaN semiconductor devices and green laser for mobile projectors. In the generaltalks, light source, light valve, screen and optical systems for enhancing
display performance will be discussed.

Workshop on Electronic Paper (EP)This workshop focuses on current topics on electronic paper, including
rewritable paper, paper-like display, and flexible display. Various novel
technologies on electrophoretic, liquid crystal, and toner display systems will be reported. Systems, devices, materials, and applications inthis field are expected to be discussed.

Workshop on MEMS for Future Displays and Related Electron
Devices (MEMS)
The workshop is unique in covering all aspects of MEMS and nanotechnologies for future displays, imaging devices, and related electron
devices. It seeks to broaden the horizon of display technologies into
MEMS technologies. Among MEMS and display conferences in theworld, this is the only opportunity where MEMS researchers gather todiscuss on such devices. Research areas such as, materials, basic
physics and fabrication process are included. Authorities of this field areinvited from top research institutions around the world. Invited speakers
are from Fraunhofer IPMS, KAIST, Kochi Univ. of Tech., MIT, Tohoku
Univ., Toyota Tech. Inst., Univ. of Cambridge, and Univ. of Tokyo (inalphabetical order). Together with excellent contributed papers, thisworkshop invites attendants who wish to cut open a new field of display
and imaging devices.

Workshop on Display Electronic Systems (DES)This workshop will cover all aspects of display systems in relation toelectronics: video data processing, interface technologies, cooperative
operations between display components such as cells and backlights,
combinations with other input/output devices, applications to the newareas, system performance, or power consumption. We will have interesting speeches on the recent hot topics such as high dynamic range
display systems, high-quality video processing and mobile display technologies.

Topical Session on Imaging and Photonic Devices (IPD)
The topical session of this year intends to discuss the recently broadening area of imaging and photonic devices, which covers the design, fabrication and characteristics of optical communication devices, novel
imaging devices, nanostructures, ultra short laser pulse and nonlinear
optical phenomena. Several new fundamental and practical achievements will be presented, of which the topics are nonlinear magnetooptics, nanostructures by mesoscopic patterning, the polysilane and liquid crystal communication devices, supercontinuum generation by photonic crystal fibers, water-surface ranging by Optical Time Domain
8Refletometry (OTDR), electrochromic displays of metal oxides, andother interesting new findings.

IDW Best Paper Award and Outstanding Poster Paper Award
IDW ’07 will present “IDW Best Paper” awards starting this year in addition to the existing “IDW Outstanding Poster Paper” award. The awardscommittee of IDW will select the most outstanding papers from thosepresented at IDW ’07. The award winners will be announced on the IDW
website and given a plaque after the conference.

Exhibition
The IDW ’07 Exhibition will be held from Dec. 5 through Dec. 7, which
covers materials, components, manufacturing and measuring equipment, software systems and related products for display devices.
Please join and enjoy discussions at exhibitors’ booths.
December 5: 13:00 – 17:00
December 6: 9:00 – 17:00
December 7: 9:00 – 14:00

Special Exhibition of “Fujioka Collection”
IDW ’07 will exhibit an historical collection of CRTs that Mr. Fujioka has
maintained for over 40 years. You can see live pictures on the very
early color and black & white televisions in comparison with the latest
Super Slim televisions at the exhibition corner in the main hall C.

EVENING GET-TOGETHERWITH WINE
Tuesday, December 4
18:00–20:00
Restaurant “Sora”, Sapporo Convention Center(Sponsored by Merck Ltd., Japan)
See page 10 for details

IDW ’08
The 15th International Display Workshops
December 3-5, 2008
Toki Messe
Niigata Convention Center
Niigata, Japan
9

GENERAL INFORMATIONSPONSORSHIP
IDW ’07 is sponsored by the Institute of Image Information and Television Engineers (ITE) and the Society for Information Display (SID).

CONFERENCE SITE
Sapporo Convention Center
Higashi-Sapporo 6-jo 1-chome 1-1 Shiroishi-ku, Sapporo, 003-0006 Japan

ON-SITE SECRETARIAT
Telephone and fax machines for IDW ’07 use will be temporarily set up
in the secretariat room (104) at Sapporo Convention Center (December
4-7).
Phone: +81-11-820-1314
Fax: +81-11-820-1324

BANQUETA buffet-style banquet will be held on December 5 from 19:30 to 21:30
in Palace Ballroom (3F), Sheraton Sapporo Hotel. As the number oftickets is limited, you are urged to make an advance reservation throughwebsite or by completing the enclosed registration form.

EVENING GET-TOGETHER WITH WINE
A get-together will be held on December 4 from 18:00 to 20:00 at therestaurant “Sora” in Sapporo Convention Center. Wine (sponsored by
Merck Ltd., Japan) will be served to participants with a relaxed atmosphere for informal discussion.

REGISTRATION
Registration is available in advance and also on site. However, proceedings book might not be guaranteed for the on-site registrants in case of
the unexpected excess of the on-site registration. Advance registrationis strongly recommended.

Registration Fees
The registration fee for IDW ’07 includes admission to the conference, a
copy of the proceedings (book or USB memory), and CD-ROM. The
proceedings in USB memory can be selected only by those who registered and paid by November 8 (Japan Standard Time).
Paid by Nov. 8
After Nov. 8
Member of SID/ITE/ASO*¥ 30,000¥ 40,000
Non-Member¥ 35,000¥ 45,000
Student**¥ 8,000¥ 10,000
Life Member of SID/ITE¥ 8,000¥ 10,000Banquet¥ 8,000¥ 10,000*ASO: Academic Supporting Organizations(See p. 12 as well as “Supporting Organizations and Sponsors” at theend of each workshop/topical session section.)**Student ID is required.
Please note that the reduced registration fee must be paid by November
8. In case of the payment after November 8 or on site, prices afterNovember 8 will be applied even if you sent the registration form by
November 8, 2007. Also note that the number of banquet tickets to register on site is limited.

10For additional sets of the proceedings (book or USB memory*) and CDROM
Book & CD-ROM USB & CD-ROM*
At the conference site
¥ 8,000¥ 8,000
Airmail after the conference¥ 15,000
not available
Domestic mail after the conference¥ 10,000
not available*Additional sets of USB memory and CD-ROM can be selected only by
the application with payment by November 8.

Payment
Three ways are provided for the registration.

(1) e-Registration
Access the following URL.
http://www.idw.ne.jp/regist.html
The e-Registration is acceptable until November 21, 2007.

(2) Mail or Fax Registration
Complete the registration form (FORM A) at the centerfold and send it
to the secretariat together with all necessary payments no later thanNovember 21, 2007.
IDW ’07 Secretariat
c/o ABEISM CORPORATION
4-30-12 Kamimeguro, Meguro-ku, Tokyo 153-8571, Japan
Phone: +81-3-5720-7022 Fax: +81-3-6203-8238
E-mail: idw@abegroup.jp
The registration fee should be remitted by one of the following methods.
1. Credit card (only VISA or MasterCard accepted)
2. Bank transfer to:
Account name: IDW
Account No.: 4307797 (ordinary account)
Bank Name: SUMITOMO MITSUI BANKING
Branch Name: KOFU BRANCH
Please attach a copy of your bank remittance form with theregistration form to avoid possible troubles.
All above payments should be made in JAPANESE YEN.
Also, please note that personal and traveler’s checks are not accepted.

(3) On-site Registration
Conference registration desk will be open:
December 4 (Tue.)
17:30–20:00
December 5 (Wed.)
8:30–18:00
December 6 (Thu.)
8:30–18:00
December 7 (Fri.)
8:30–15:00
The on-site registration fee will be payable by:
1. Cash (JAPANESE YEN only)
2. Credit card (VISA or MasterCard only)
Bank transfer, bank check, or personal/traveler’s checks are notaccepted. Payment by cash is recommended.

Cancellation Policy
Refunds for registration, banquet, additional sets of proceedings etc.
will be made on written cancellation received by IDW ’07 secretariat by
November 8. For cancellations received after November 8 or no-shows,refunds will not be made. However, after IDW ’07 closes, a set of theproceedings book/USB memory and CD-ROM will be sent to the registrants who have paid the registration fees.

11

INQUIRIESIDW ’07 Secretariat
c/o ABEISM CORPORATION
4-30-12 Kamimeguro, Meguro-ku, Tokyo 153-8571, Japan
Phone: +81-3-5720-7022 Fax: +81-3-6203-8238
E-mail: idw@abegroup.jp

ACADEMIC SUPPORTING ORGANIZATIONSThe Chemical Society of JapanThe Electrochemical Society of Japan (ECSJ)The Illuminating Engineering Institute of JapanThe Imaging Society of JapanThe Institute of Electrical Engineers of JapanThe Institute of Electronics, Information and Communication Engineers(IEICE)The Institute of Image Electronics Engineers of Japan
Japan Ergonomics Society (JES)The Japanese Liquid Crystal Society (JLCS)The Japan Society of Applied Physics
The Virtual Reality Society of JapanThe Society of Polymer Science, Japan

FUNDS
Funds for the conference are furnished in part by the following organizations:• Grant-in-Aid for Scientific Research (KAKENHI: 1862004) from MEXT
• Sapporo International Communication Plaza Foundation

Please pay attention to the website (http://www.idw.ne.jp/)
for latest information.

Fujioka Collection
The world most complete private CRT history
collection, including World first Color CRT,World first Trinitron, Early Camera Tube,
Early Color and Black & White Televisions,will be demonstrated with live picture at Exhibition.
Main Hall C
Sapporo Convention Center
12

HOTEL AND TRAVEL INFORMATIONHOTEL RESERVATIONSThe IDW ’07 executive committee has secured enough rooms for theparticipants. Participants who want to stay in Sapporo during IDW ’07
should make reservations directly with the tourist agency “TOPTOUR
Corporation” by yourself as follows. Reservation will be made on a firstcome, first-served basis.
1. By website, please access the following URL.
http://www.toptour.co.jp/conv/3917/idw07/
On-line registration is highly recommended.
2. By fax, please use the enclosed Form B. (The handling charge of 525
yen per person is required in the case of Fax reservation.)
1) Confirmation will be sent to the applicants directly from the tourist
agency in about 10 days after receiving your application.
2) If your both 1st choice and 2nd choice are fully booked, the tourist
agency will send you the confirmation with an alternative.

VISAS
Visitors from countries whose citizens must have visas should apply toa Japanese consular office or diplomatic mission in their respective
country. For further details, please contact your travel agent or the local
consular office in your country.
Attention: For some countries’ citizens, official documents prepared by
the secretariat will be needed. Please ask the secretariat for its application at least two months before the conference.

JAPAN RAIL PASS and JR HOKKAIDO RAIL PASS
(1) The JAPAN RAIL PASS is the most economical way to travel
throughout Japan by rail and JR buses.
Please be aware, however, that some restrictions apply.
(i) The pass is not valid for “NOZOMI” trains on the Tokaido andSanyo Shinkansen lines.
(ii) The pass cannot be purchased inside Japan.
For details, please access the following URL.
http://www.japanrailpass.net/eng/en001.html(2) The JR Hokkaido Rail Pass, a convenient, economical pass available only for travelers from abroad, offers unlimited rides on any JR
Hokkaido line for 3 or 5 days.
For details, please access the following URL.
http://www2.jrhokkaido.co.jp/global/english/railpass/index.html
Please ask the JR Hokkaido Visitors Information Desk at New Chitose
Airport Station or the JR Information Desk at JR Sapporo Station WestGate.
The JR Hokkaido Visitors Information Desk
New Chitose Airport Station (8:30–21:00)
http://www2.jrhokkaido.co.jp/global/english/access/chitose.html
The JR Information Desk
JR Sapporo Station West Gate (8:30–19:00)
http://www2.jrhokkaido.co.jp/global/english/access/sapporo.html

CLIMATE
Sapporo’s average temperature is around 0 degree Celsius at the
beginning of December. The first snowfall usually occurs in late October. From early December onward, the ground is often covered withsnow. Please take care of yourself with wear and shoes.

13

SAPPORO CITY
Sapporo, the capital of Hokkaido, is the fifth largest city in Japan andprimarily known as the host city for the 1972 Winter Olympics. The
development of Hokkaido was started on a large scale about 150
years ago, when Sapporo was enlarged according to the advice of
foreign specialists. Sapporo was built based on a rectangular street
system.
Today, the city is well known for its ramen (a special kind of noodle),beer, and the annual snow festival held in February.
Sapporo’s weather is harsh in winter with lots of snowfall, however,
may attracts outdoor lovers including skiers and snowboarders.

PLACES to SEE/VISIT
Odori Park is an oasis at the city center, which extends 1.5 km eastwest. It is decorated with fountains, sculptures and flower beds. In
winter, since the end of November, the park and Ekimae-main street
are decorated with illuminations, creating brilliant works that liven up
the surrounding areas.
Susukino is the largest entertainment district in the northern part ofJapan, with approximately 5,000 restaurants and entertainment
facilities in total. The district is popular not only among locals, butalso among visitors.
Large shopping malls and department stores are found around JR
Sapporo Station and Odori subway station.
JR Tower is located beside the JR Sapporo Station. The night viewof downtown Sapporo from its higher floors, with a drink or two,
ensures a splendid evening.
A trip to Sapporo Beer Museum and a tour of the brewery give history of brewing in Sapporo. The adjoining brick buildings of theformer brewery now house a beer hall, where the local brew is complemented by a variety of Hokkaido delicacies including popularlamb barbeques named after the Mongolian warrior, Genghis Khan.
Sapporo Winter Museum exhibits the valuable legacy of Sapporo
Winter Olympic Games as well as historical materials of wintersports. There are two different ski jumping hills near by. One ofthem, Okura-yama, is designed for large hill jumping and will be
opened for visitors to climb up to the observation deck.
A 75- minute bus tour from JR Sapporo station takes you to one of
the largest hot springs in Japan, Jouzankei.
Lake Toya is located about 100 kilometers south of Sapporo and isfamous for its hot spa, volcanoes and beautiful scenery, where thepresidents and the prime ministers will gather to hold a Summit next
year. You can visit craters of Volcano Usu that erupted in 2000.
Probably, some ski grounds on the outskirts of the city open at the
beginning of December.
Multilingual sightseeing buses are available.
Sapporo’s numerous charms make it an ideal convention site for you
and your traveling companions.
For more information, visit Sapporo city guide:
http://www.welcome.city.sapporo.jp/english/

14

ACCESS TO SAPPOROCONVENTION CENTER
Central Japan
Int’l Airport-CENTRAIR(NGO)

KansaiInt’l Airport(KIX)

100 min
FlightBeijing,
Dalian,Hong Kong,
Pusan, Seoul,
Shanghai,
Shenyang,
Taipei, etc.

Narita Int’l
Airport(NRT)

110 min
Flight

100 min3 flights / day
Limousine Bus
㩯3,000 / 75 min

New Chitose
Airport
(CTS)

90
min
FlightHanedaAirport(HND)

JR Chitose Line Rapid
27 minSubwayTozai Line
13 minShin Sapporo Station
㩯850 from the airport

9 min

Higashi Sapporo
Station

Sapporo Station
㩯1,040 from the airport

㩯280 from Shin Sapporo Sta.
㩯240 from Sapporo Sta.

1 min

SubwayNanboku Line
6 min

Odori Station
Subway Tozai Line

5 min by Free
Shuttle Bus*or 10 min on Foot

IDW ’07 CONFERENCE SITE
(SAPPORO CONVENTION CENTER)*(See http://www.idw.ne.jp/)
Information of this page may be changed. Please confirm the details in each company.
(as of July, 2007)15

Accessfrom New Chitose Airport
New Chitose Airport

A
Sheraton Sapporo
1 Hotel (Banquet)

B

9min

JR LineSubw
Nanb ay
oku
Lin

e 2m

Shin Sapporo

Odori

ay
in
Subw ine 13m
iL
Toza

in

SapporoSapporoConvention
CenterC

ShuttleBus*

6min

Higashi Sapporo
SubwayTozai Line
*See http://www.idw.ne.jp

Banquet Venue− Shin Sapporo −A

Sheraton
Sapporo
Hotel
Sapp
oro


JR
S
apLpinoero

PoliceStation1

Tozai-Line
Exit 8Shin
Bus Terminal
S
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Tozai y
Line

New

16

Chito
se
Airpo
rt

Sapporo Downtown
and Hotel Location

B
O

ta
ru
JR

Ha

koda

New
Airpo Chitosertt e Lin e

4

Hokkaido
Government23

TV Tower

Odori Park

Tozai Line
Toho Line

8
1 Sheraton Sapporo Hotel

6

3 Royton Sapporo Hotel

Phone : +81-11-271-2711

4 Keio Plaza Hotel Sapporo
Phone : +81-11-271-0111

7

5 Sapporo Excel Hotel Tokyu
Phone : +81-11-533-0109

6 Sapporo Tokyu Inn

Phone : +81-11-531-0109

7 Blue Wave Inn Sapporo

Nanboku Line

(Shin-Sapporo : See Map A )Phone : +81-11-895-8811
2 Sapporo Grand Hotel
Phone : +81-11-261-3311

5

Phone : +81-11-511-7531

8 Hotel Sunroute New Sapporo
Phone :+81-11-251-2511

JR LineSubway
Tram

0

250

500 m

17

٨٨٨

٨٨٨

Nango-dori٨٨٨

Exit 1
Free Shuttle Bus(food court)

DAIEISuper Market

Condminium

Tozai-line Higashi Sapporo
Subway Station

Exit 2nipponNipponexpress
Express٨٨٨

Seven-Elevenparking
Parking٨٨٨Parking
Area

ParkingArea

5 min by Free Shuttle Bus or
10 min on Foot٨٨٨

Sapporo Daichi Park

Free Shuttle Bus

SAPPORO West Entrance
CONVENTIONCENTER

Parking
Area

South
Entrance

Sapporo Media andResource Technology Center

Ū

Ū

Ū

Ū

Ū

18
Ū

Parking Area
Sapporo Industries
Cultivation Center

٨٨٨

Route

Ū

Ramen

٨٨٨

٨٨٨

C

Ū

Ū

٨٨٨

Sapporo Convention
Center Map
12

IDW Outstanding
Poster Paper AwardThe 2007 award winners will be announced on the
IDW web site:
http://www.idw.ne.jp/award.html

SID 2008
International Symposium, Seminar, and Exhibition
May 18–23, 2008
Los Angeles Convention Center
Los Angeles, California, USA

BANQUET
Wednesday, December 5
19:30–21:30
Palace Ballroom (3F)
Sheraton Sapporo HotelSee page 10 for details

EXHIBITION
13:00–17:00
9:00–17:00
9:00–14:00

Wednesday, Dec. 5
Thursday, Dec. 6
Friday, Dec. 7

Main Hall C
Sapporo Convention CenterFree admission with your registration name tag.

19

Wednesday

December 5

IDW ’07
Wednesday, December 5
9:00 - 9:10

Conference Hall

Opening
Master of Ceremony: T. Sugawara, Executive Chair
Opening Remarks
9:00
Y. Nagae, General Chair, Hitachi Displays, Japan
H. Seki, Program Chair, Hachinohe Inst. of Tech., Japan
9:10 - 10:30

Conference Hall

Keynote Address
Co-Chairs:

H. Seki, Program Chair, Hachinohe Inst. of Tech., Japan
Y. Nagae, General Chair, Hitachi Displays, Japan

Keynote Address - 1
9:10

Innovation in Molecular Electronics,
Displays and Culture

K. Matsushige
Kyoto Univ., JapanFor the next-generation electronics and displays, several innovations
should be made. Functional organic materials and recent
nanotechnology will play essential roles to create molecular-basedevices, future molecular computer, and flexible EL displays. Also, thecombination of such cutting-edge technologies and traditional culture
will bring us a new 21C culture.
Keynote Address - 2
9:50

Creation of Innovative Concept for New
Business

K. MoriTokyo Univ. of Sci., Japan
Companies in the innovation age need to develop new businesses
which have the top market share in the world. In this keynote speech, I
would like to present an innovative concept creation method that led tosuccessful R&D for new businesses, such as Japanese Word
Processor, Note PC and DVD.
----- Break -----

20

Wednesday

December 5

10:40 - 11:50

Conference Hall

Invited Address
Co-Chairs:

T. Miyashita, Program Vice-Chair, Tohoku Univ., Japan
H. Mori, Program Vice-Chair, FUJIFILM, Japan

Invited Address - 1
10:40

Active-Matrix Technologies for Flexible
Displays

J. Jang
Kyung Hee Univ., Korea
In this paper the TFT technologies for flexible displays are reviewed.
The TFT backplanes with amorphous silicon, low temperature poly-Si,organic semiconductor and oxide semiconductor could be built on thesubstrates such as plastic and metal foil for flexible displays. The
current issues and advantages on these technologies are discussed
together with the TFT backplanes built on flexible substrates in ADRC.
Invited Address - 2
11:15

A Scalable Business Approach to 3D
through End-to-End Innovation

J. Swillens
Philips 3D Solutions, The Netherlands
3D has the potential to completely replace the 2D world. In this address,
Jos Swillens, CEO of Philips 3D Solutions, describes in detail a scalable
business approach to 3D through end-to-end innovation with their
WOWvx technology. WOWvx enables seeing 3D without glasses andunlocks existing content from the 2D world.

Fujioka Collection
The world most complete private CRT history
collection, including World first Color CRT,World first Trinitron, Early Camera Tube,
Early Color and Black & White Televisions,will be demonstrated with live picture at Exhibition.
Main Hall C
Sapporo Convention Center21

Wednesday

December 5

Workshop on
LC Science and Technologies
Wednesday, December 5
13:20 - 14:45

Conference Hall

LCT1: Fast Response LCDs (1)Chair:
Co-Chair:
LCT1 - 1:
13:20

T. Nose, Akita Pref. Univ., Japan
K. Miyachi, Sharp, Japan
Invited High Quality OCB-III Display with New Driving
Method Having Fast Response and High Contrast
Ratio
K. Nakao, Y. Tanaka, H. Takahara, S. Kawaguchi,
K. Nishiyama, S. Araki, A. Takimoto
Toshiba Matsushita Display Tech., Japan

We have developed high performance OCB-III TFT-LCDs using LED
blinking backlight. The OCB-III enables super high motion picture
quality by securing a sufficient black period in a frame time and 1.4 ms
MPRT is achieved. The OCB-III is superior to CRT in terms of motion
picture quality.
LCT1 - 2
13:45

A 32-in. High Video Image Quality OCB-LCD TV
T. C. Hsu, C. L. Pan, C. L. Wu, J. C. Cheng, M. T. Hsu,
Z. F. Chen
Chunghwa Picture Tubes, Taiwan

This paper proposes the 32" high video image quality OCB LCD-TV
utilizes the method “Dynamic Scanning Backlight with Black Insertion”
to enhance video image quality. This method includes dynamic
backlight luminance control to enhance contrast over 1500:1 andscanning backlight with black insertion to reduce MPRT less than 6ms.
LCT1 - 3
14:05

Development of OCB-LCD Improving Response at
Low Temperature
N. Kubota, M. Tsukane, T. Fukami, T. Kojima, K. Nakao,
H. Wakemoto, Y. Kizu*, R. Hasegawa*Toshiba Matsushita Display Tech., Japan*
Toshiba, Japan

We have developed high performance OCB LCD with fast response at
low temperature. This is accomplished by use of low rotational viscosity
LC material and improvement of bend transition. The new OCB LCD
achieves very fast response time and bend transition at low
temperature. This is suitable for outdoor-use.

22

Wednesday
LCT1 - 4
14:25

December 5
Development of 3.5-in. VGA Field-Sequential-Color
Optically Compensated Birefringence a-Si:H TFT
LCDs with Fast Splay-to-Bend Transition and High
Transmittance
C.-H. Wu, P.-S. Shih, J. H. Yang, P.-Y. Chen, J. Chang,
H.-L. Pan, K. F. Hsu, C.-Y. Lin, S.-H. Lin, C. C. Chang,
K.-H. Yang
HannStar Display, Taiwan

A 3.5" VGA FSC TFT-OCB prototype with a high panel transmittance of
15.2 % and a fast splay-to-bend-transition time less than 0.2 sec atpanel startup has been developed using conventional a-Si:H TFT
process. A new pixel design that increased the aperture ratio by 45%
over a conventional design and a novel driving scheme to obtain ahigher LC transmittance at bright state were used to achieve the highpanel transmittance.
----- Break -----

15:00 - 16:25

Conference Hall

LCT2: Display Measurement
Chair:
Co-Chair:
LCT2 - 1:
15:00

T. Ishinabe, Tohoku Univ., Japan
H. Wakemoto, Toshiba Matsushita Display Tech., Japan
Invited Study on Appropriate Method for
Measurement of Luminance and Color of FPD
K. Yanai, H. Matsui, Y. Tanaka
Topcon Technohouse, Japan

The purpose of our research was to examine the effect of a solid angleof light on the measured value of the luminance from Flat Panel Display.
The influence of degree of the solid angle on the measured value ofluminance was found to be significant.
LCT2 - 2
15:25

Inside Sub-Pixel Dynamic Observation: Local Flicker
and Micro-Structure LC Response
P.-C. Liao, H.-L. Hou, C.-Y. Chiu, C.-H. Tsao, C.-Y. Lee,
T.-J. Chang
AU Optronics, Taiwan

We proposed a quantification scheme for inside sub-pixel dynamic
observation (ISDO) of LCD optics. Two applications are introduced.
First, the individual-area flicker within a sub-pixel can be verified. Each
optimized Vcom can be found. Second, LC response of microstructures, such as ITO slit, bump and full ITO, can be individually
measured.

23

Wednesday
LCT2 - 3
15:45

December 5
Fluid Flow in Homogeneous and Homeotropic
Nematic LC Cells Induced by Step Voltage Excitation
Y. Iwata, H. Naito, M. Inoue*, H. Ichinose**,M. Klasen-Memmer***, K. Tarumi***Osaka Pref. Univ., Japan*
Toyo, Japan**Merck, Japan***
Merck KGaA, Germany

Flow effects in homogeneous and homeotropic nematic liquid crystal(NLC) cells have been studied from the analysis of transient currents.
The measured transient currents were well reproduced by taking into
account the flow effects. It is found that the flow effects accelerate fieldinduced director response in homeotropic NLC cells, while the flow
effects are negligible in homogeneous NLC cells.
LCT2 - 4
16:05

A Highly Accurate Method for Measuring theOrdinary and Extraordinary Refractive Indices of LC
Materials
Y. Ohno, T. Ishinabe, T. Miyashita, T. Uchida
Tohoku Univ., JapanA new method for measuring the ordinary and extraordinary refractive
indices of liquid crystal materials was devised by considering multiple
reflections and interference. The refractive indices can be obtained fromthe numerical fitting between measurement and calculated values of theamplitude ratios and phase differences. This method is effective fordesign of high-quality liquid crystal displays.
----- Break -----

16:40 - 18:00

Conference Hall

LCT3: High Performance LCDs
Chair:
Co-Chair:
LCT3 - 1:
16:40

H. Fujikake, NHK, Japan
M. Inoue, Toyo, Japan
Invited Polarized Light Control Technology for High
Quality LCDs
T. Ishinabe, T. Uchida
Tohoku Univ., Japan

Optical performance of liquid crystal displays has been extremely
improved with a development of optical film compensation technologies.
This paper describes the fundamental characteristics of the optical films
and the development of high quality LCDs using light control
technology.

24

Wed./Thu.
LCT3 - 2
17:05

December 5/6
Sandwich Electrode with Multi-Domain Vertical
Alignment LCD
T.-C. Yang, S.-L. Lee, C.-M. Chang, F.-Y. Gan
AU Optronics, Taiwan

We have developed a high performance and yield amorphous siliconliquid crystal display. Moreover, it is not only low cost and complex but
protrusion and organic layer free different from conventional MVA LCDs.
However, this new model owns the similar function of multi-domain
vertical alignment. On 2.5 inches (163 pixels per inch) panel,transmittance and contrast ratio of our new model are all 8.2% and 400
up at NTSC 49%, respectilvely.
LCT3 - 3
17:25

A Field Sequential Color LCD Based on Color Field
Arrangement for Color Breakup and Flicker
Reduction
Y.-T. Hsu, F.-C. Lin, C.-H. Chen, Y.-P. Huang, H.-P. Shieh,
J.-H. Chen*, J.-M. Hong*Nat. Chiao Tung Univ., Taiwan*
AU Optronics, Taiwan

Field sequential color liquid crystal displays (FSC-LCDs) are well known
that the color breakup (CBU) is the serious issue needed to be solved.
We have developed a new driving technique on a 5.6-in. OCB mode
FSC-LCD. This proposed 4-color field arrangement (4-CFA) method
can effectively eliminate the CBU of FSC-LCDs.
LCT3 - 4L
17:45

Disclination Free BVA (Biased Vertical Alignment)
Mode
Y. B. Lee, K. C. Lee, H. C. Liu, C. H. Yu, W. C. Lin
HannStar Display, Taiwan

BVA (Biased Vertical Alignment) mode is a effective wide-viewing-angle
LCD with a distinct advantage of lower manufacture cost like as TNMode. But it always exists disclination problem. In this paper, we makeuse of hole pattern on C/F side to improve the disclination issue andalso reduce bias voltage level.

Author Interviews
18:00 – 19:00

Thursday, December 6
9:00 - 10:10

Conference Hall

LCT4: New Materials
Chair:
Co-Chair:A. Fujita, Chisso Petrochem., Japan
M. Kimura, Nagaoka Univ. of Tech., Japan25

Thursday
LCT4 - 1:
9:00

December 6
Invited Self-Organized Photonic Crystals of Organic
and Polymer Materials for Laser Applications
S. Furumi
Nat. Inst. for Materials Sci., Japan

This presentation reports the self-organized organic photonic crystals
for laser applications. First, chiral liquid crystals are used to control the
optically-excited lasing by external stimuli. Second is establishment of
new potentials of colloidal crystals. Introduction of a light-emitting layer
between the colloidal crystals generates efficient lasing in the photonic
band-gap.
LCT4 - 2:
9:25

Invited Electro-Optical Switching in a Blue Phase III
Stabilized by a LC Oligomer
A. Yoshizawa
Hirosaki Univ., Japan

We report electro-optical switching with a response time of the order of
10-2 s for a blue phase III (BPIII) exhibited by the newly designed
compound. Switching caused by the phase transition between BPIII and
N can supply not only a pronounced black state without surface
treatment but also a homogeneous bright state.
LCT4 - 3
9:50

Novel LC Materials toward the Faster Response Timeand Lower Driving Voltage
A.-C. Chen, P.-J. Huang, S.-H. Liu, K.-L. Cheng
ITRI, Taiwan

To reduce the response time and the driving voltage of LCDs, two novel
types of LC materials were designed and synthesized. A series oftrifluoro-methyl LCs were prepared and evaluated, which exhibit low
rotational viscosity. Meanwhile, various N,N-disubstituted piperazine
compounds were also prepared which resulted in a high dielectricanisotropy.
----- Break -----

10:40 - 12:05

Conference Hall

LCT5: Alignment Process (1)Chair:
Co-Chair:

26

M. Kimura, JSR, Japan
I. Hirosawa, Japan Synchrotron Radiation Res. Inst.,
JapanThursday
LCT5 - 1:
10:40

December 6
Invited LCD Photoalignment: What is Next?
V. G. Chigrinov, H. S. Kwok, H. Hasebe*, H. Takatsu*,
H. Takada*Hong Kong Univ. of S&T, Hong Kong
*Dainippon Ink & Chems., Japan

Liquid crystal (LC) photo-alignment (PA) using azo-dyes is reviewed.
Azo-dye PA method provides a controllable LC pretilt angle and strong
anchoring energy of the liquid crystal cell, as well as high thermal and
UV stability and high VHR value. The application of this method to the
LC alignment and fabrication of various types of LC displays (LCD) is
discussed.
LCT5 - 2
11:05

Characterization of the Photo-Alignment Material SD1/SDA-2 with Spectroscopic Ellipsometry
I. Valyukh, H. Arwin*, V. Chigrinov**, S. Valyukh**Dalarna Univ., Sweden*
Linking Univ., Sweden**Hong Kong Univ. of S&T, Hong Kong

Spectroscopic ellipsometry is applied for investigation of the azo-dye
SD-1/SDA-2 which are used for photoalignment of liquid crystals. The
measured optical constants were modelled with an ensemble of theLorentz oscillators. The results can be used for simulation of the opticalproperties of LC devices.
LCT5 - 3
11:25

Control of Pretilt Angle for Vertically Aligned LCDs
Using Magnetic Field with UV Curable LC Monomers
K. Okuyama, T. Miyashita, H. Katakura*, J. Shimizu*,
T. Uchida
Tohoku Univ., Japan*
Sony, JapanIn VA-LCDs, control of pretilt angle at the surface is a key technology to
improve image quality. We newly developed an alignment-control
method using magnetic field and UV-curable LC monomers. The tilting
direction of liquid crystal is controlled and monodomain alignment withpretilt angle of 89° has been successfully obtained.
LCT5 - 4
11:45

Molecular Orientation at Surface of Alignment Films
Studied by Near Edge X-Ray Absorption Fine
Structure Spectroscopy
T. Tominaga, M. Kimura, S. Kimura
JSR, Japan

Surfaces of alignment films are studied by near edge X-ray absorption
fine structure (NEXAFS) spectroscopy. The molecular orientation at thesurface of rubbed polyimide films, photo-alignment films, andhomeotropic alignment films are determined with their polarization
dependence of NEXAFS spectra.
----- Lunch ----27

Thursday

December 6

15:10 - 16:35

Conference Hall

LCT6: Alignment Process (2)Chair:
Co-Chair:V. Chigrinov, Hong Kong Univ. of S&T, Hong Kong
R. Yamaguchi, Akita Univ., Japan

LCT6 - 1:
15:10

Invited LC Alignment on Inorganic Layers with nmSized Topography
K. Hiroshima
Univ. of Yamanashi, Japan

High reliability LC alignment layers have been required. Obliquely
evaporated SiO layers and anodic porous alumina are known as
inorganic alignment films, which consist of nm-sized columnar andporous structures. Aligning mechanism is understood in minimum
elastic energy conditions. Various inorganic LC aligning layers and theiraligning properties are described.
LCT6 - 2
15:35

Azimuthal Nematic Bistability at Nanoimprinted
Surface Groove
J. S. Gwag*, J.-I. Fukuda*,**, M. Yoneya*,**,
H. Yokoyama*,***ERATO-SORST, JST, Japan**AIST, Japan

Azimuthal nematic bistability was induced by a composition action
between two azimuthally orthogonal anchoring energies which were ledby the combination of a nanoimprinted groove and a mechanicalrubbing. The azimuthal easy directions can be controlled by themodulation of groove pitch and rubbing conditions. Fukuda’s model isused to express surface anchoring of nematic liquid crystal in surface
groove.
LCT6 - 3
15:55

Patterned LC Alignment on Micro-Grating Structures
Fabricated by Direct Laser Writing
C. H. Lee, H. Yoshida, Y. Miura, K. Tokuoka, A. Fujii,
M. Ozaki
Osaka Univ., Japan

Local alignment of nematic liquid crystal (LC) through local micrograting structures fabricated via a two-photon-excitation laserlithography process was demonstrated. A local twisted-nematic region
was prepared using one rubbed and one fabricated micro-grating
surface. The optical polarizing photographs suggest that local alignmentof LC molecules is achieved on the micro-grating structure.

28

Thursday
LCT6 - 4
16:15

December 6
Transmittance Enhancement of Ridge-Free Vertical
Alignment TFT-LCD
Y.-Y. Huang, H.-P. Chiu, C.-C. Lin, C.-R. Lee, H.-T. Yu
Chunghwa Picture Tubes, Taiwan

The transmittance of conventional chevron-typed microdomain verticalalignment mode has evidently been investigated to be maintained by
specific indium-tin-oxide (ITO) slit patterns of ridge-free VA display. The
ITO pattern with dendritic type is experimentally and simulatedly foundto enhance the panel transmittance, contrast ratio and to accelerate theresponse time.
----- Break -----

16:45 - 18:10

Conference Hall

LCT7: Novel LCD Modes
Chair:
Co-Chair:
LCT7 - 1:
16:45

H. Okada, Univ. of Toyama, Japan
T. Takahashi, Kogakuin Univ., Japan
Invited Flexible Color LCD Panel Driven by LowVoltage Operation Organic TFT
Y. Fujisaki, H. Sato, T. Takei, T. Yamamoto, H. Fujikake,
S. Tokito, T. Kurita
NHK, Japan

An organic TFT (OTFT)-driven color flexible ferroelectric LC (FLC)
display panel with 64×64 pixels and a resolution of 50ppi has beendeveloped. We integrated a flexible FLC with polymer networks andwalls, and pentacene-OTFT by printing and lamination technique. Colormoving images were successively displayed at low driving voltage byusing a field-sequential method.
LCT7 - 2
17:10

New Approach to Reduce the Driving Voltage for TNLCDs
K. Takatoh, T. Kaneko, T. Uesugi, S. Kobayashi
Tokyo Univ. of Sci. Yamaguchi, Japan

A novel TN-LCD mode of extremely low driving voltage, RTN-LCD, is
proposed. The structure is unique at two points: (1) Molecules decline
without applying electric voltage; (2) By applying electric voltage, a partof the LC layer twists in the opposite direction. For practical application,
further stabilization would be required.

29

Thu./Fri.
LCT7 - 3
17:30

December 6/7
Preparation and Evaluation of Nematic OpticallyCompensated Birefringence Mode LCD
R. Nakamura, T. Ishinabe, T. Uchida, H. Mori*
Tohoku Univ., Japan*FUJIFILM, Japan

In order to evaluate the performance of the nematic opticallycompensated birefringence (NCB) mode, we fabricated NCB cells andoptimized the cell parameters to obtain dual domains. The fabricated
NCB mode LCD had fast response time (ton+toff) less than 8ms and ahigh contrast ratio of over 800:1.
LCT7 - 4
17:50

Color Reflective RGBW BiNem Display
J. Osterman, S. Jacquier, C. Joubert, J.-D. Laffitte,
J. Angelé, F. Leblanc
Nemoptic, France

A color reflective RGBW Q-SVGA BiNem display with 100 dpi
resolution and 5.1" diagonal has been developed. The manufacturing
was performed on 14"×16" color filter glass substrates using standard
LCD production equipments. The brightness is measured to >20% at
acceptable color saturation, and 16 graylevels are demonstrated.

Author Interviews
18:10 – 19:10

Friday, December 7
9:00 - 12:00

Main Hall C

Poster LCTp1: LCD Modes (1)LCTp1 - 1

Novel Single Cell Gap Single Mode Transflective
Display Based on HAN Cell
P. Xu, H. Y. Mak, V. Chigrinov, H. S. Kwok
Hong Kong Univ. of S&T, Hong Kong

New transflective LCD with single cell gap has been studied. Compared
to double cell gap structure and single cell gap with two modes,
fabrication of single cell gap structure consisting single mode is mucheasier. Based on this new configuration, transflective LCD with highbrightness and contrast could be obtained.

30

Friday
LCTp1 - 2

December 7
Optimized Single Cell Gap Transflective LCD without
Sub-Pixels Separation
H. Y. Mak, P. Xu, X. Li, V. Chigrinov, H. S. Kwok
Hong Kong Univ. of S&T, Hong Kong

Twisted Nematic (TN) liquid crystal display is optimized for transflective
liquid crystal displays. Each pixel of the new configuration is partiallytransmissive and reflective with the help of a semi transparent mirror.
This TN LCD configuration has a good performance, easy to fabricate
and suitable for high quality transflective TFT-LCDs.
LCTp1 - 3

Wide Viewing Angle and Minimum Gray Color Shiftfor Transflective ECB Mode with Low Cost
J. I. Lim*,**, W. S. Park*, S. H. Ahn*, C. W. Kim*, J. S. Yi**
Samsung Elect., Korea**Sungkyunkwan Univ., Korea*

Transflective ECB mode without wideband quarter-wave retarder plate
has gray color shift problem, narrow viewing angle and low contrast
ratio. In order to overcome this problem, we optimized configuration oftransflective ECB mode and driving voltage condition by appling A-plate
We obtained small gray color shift, and wide viewing angle.
LCTp1 - 4

Low Blue Shift and High Transmittance Transflective
LCD with Multi Cell Gap Design
Y.-L. Lin, H.-C. Tung, C.-J. Hu, F.-Y. Gan
AU Optronics, Taiwan

We demonstrate the multi cell gap design in transflective LCD for
obtaining different gaps among pixel. We change the total thickness of
the insulating layer on the array substrate to construct multi cell gap
structure. Our result shows that transmittance of LCD with multi cell gap
design can be increased by 11.8%, and blue shift can be less than 0.05.
LCTp1 - 5

Microlens Arrays Design to Improve the Brightness
for Transflective LCD
H. K. Shin, T.-H. Yoon, J. C. Kim
Pusan Nat. Univ., Korea

We propose a new transflective liquid crystal display with two microlens
arrays and a transflective plate. With minimal transmission area, highlight efficiency can be obtained for both reflective and transmissivemodes, respectively. Compared with the conventional structure, the lightefficiencies increase by 97% and 80% in transmissive and reflectivemodes, respectively.

31

Friday
LCTp1 - 6

December 7
Simulation of High Brightness on Transflective LCDwith Micro Cylindrical Lens Array
C.-W. Chen, Y.-H. Chang, C.-Y. Chen, Y.-F. Wang,
H.-C. Wu, C.-C. Lin*
Nat. Yunlin Univ. of S&T, Taiwan*Chunghwa Picture Tubes, Taiwan

We propose an optical component for transflective liquid -crystal
displays (LCDs). Several micro cylindrical lens array structures were
designed and compared using the optical simulation software
LIGHTTOOL. Simulation results demonstrated that the cylindrica l lensarrays enhance brightness in both the reflective and transflective mode.
The optimized structure effectively collects more ambient light and also
improves the backlight system ratio.
LCTp1 - 7

A New Transflective OCB-LCD with Fast Response
Time and Wide Viewing Angle
I. Fukuda, T. Ohnishi, T. Ishinabe*, T. Uchida*
Kanazawa Inst. of Tech., Japan*Tohoku Univ., JapanA new transflective LCD using an OCB-mode LCD was designed to
improve response time and viewing-angle of transflective displays. We
verified that a wide viewing-angle exceeding ±80° (CR > 10:1) could beachieved in both reflective and transmissive parts by using optimum
design parameters of compensation films.
LCTp1 - 8

A Motion-Blur-Free OCB-LCD for Mobile TV
Applications
S.-H. Chang, I.-A. Yao, P.-P. Liao, C.-J. Chen, C.-L. Yang,
J.-P. Pang
Innolux Display, Taiwan

Optically Compensated Bend (OCB) LCDs using black insertion
technology, blinking backlight technology and ultra aperture ratio (UHA)
technology have been developed for mobile displays. The pseudoimpulse driving method significantly improves the motion picture qualityof conventional hold-type LCDs. The UHA technology can further
improves the insufficient transmittance of OCB LCD caused by theimpulse driving method.

32

Friday
LCTp1 - 9

December 7
A High Performance OCB-LCD for Slim TV
Applications
I.-A. Yao, S.-H. Chang, Y.-J. Hsu, K.-W. Chien,
C.-J. Chen, C.-L. Yang, J.-P. Pang
Innolux Display, Taiwan

We have developed 15.4"W (WXGA) OCB LCDs by combing black
insertion technology with scanning backlight technology. In order toachieve the slim LCD module application, we developed the novel sideedge scanning LED backlight to replace the conventional direct-type
scanning LED backlight. Based on this technology, the high efficiency
slim LCD TV with MPRT less than 6 ms could be achieved.
LCTp1 - 10

Novel Electrode Structure in the Super In-Plane
Switching LC Cell for Fast Response Time
J.-S. Yang, J.-H. Lee*, S.-W. Choi*, G.-D. Lee
Dong-A Univ., Korea*LG.Philips LCD, Korea

We propose a novel electrode structure for fast response time in the
Super In-Plane Switching(S-IPS) LC cell. To improve the response timeof the S-IPS cell, the bent electrode is applied to the conventional
structure. As a result, we could achieve fast response time compared tothe conventional structure.
LCTp1 - 11

Fast Response TN-LC for Color Sequential Displays
C.-N. Mo, W.-C. Lin, S.-L. Lyu
Chunghwa Picture Tubes, Taiwan

To fabricate a color sequential display based on TN liquid crystal
materials was attempted. Electro-optical properties of switching speed,
contrast, and surface alignment were illustrated as functions of intrinsic
anisotropy. We investigated the electro-optical effect of theunsymmetrical switching properties in rise and decay of twist nematic
liquid crystal.
LCTp1 - 12

A New Optical Configuration for Transflective
Ferroelectric LCD with Single Cell Gap
X. Li, P. Xu, A. Murauki, V. Chigrinov
Hong Kong Univ. of S&T, Hong Kong

We propose a new optical configuration of transflective FLC display
mode with single cell gap. Since no double cell gap structure, no sub
pixels separation or patterning polarizers or retarders are included in
the configuration, the fabrication process is very easy.

33

Friday
LCTp1 - 13

December 7
Electro-Optical Response of an Overdriven LCD
J.-J. Wu, S.-H. Fan, S.-S. Wei, Y. Shen*, C.-C. Peng*Nat. Taipei Univ. of Tech., Taiwan*VastView Tech., Taiwan

An overdriven MVA liquid crystal display at low gray level usually shows
optical bounce phenomenon that results in double edge and motion
image blur. In this study, we investigated the MVA display and found out
the cause of the optical bounce.
LCTp1 - 14

Low Cost and High Optical Performance Mobile
Phone MVA LCDs with the Elimination of Both
Protrusion and ITO Slit Geometries
H. L. Ong, C. C. Chiu, C. M. Huang*, C. C. Lee*,
C. F. Hsu*, F. C. Wu*
Kyoritsu Optronics, Taiwan*
Wintek, Taiwan

We successfully fabricated high-performance MVA LCDs at low cost formobile phone applications while eliminating both protrusions and ITO
slit geometries. We designed special pixels to amplify the weak fringe
field effects based on Kyoritsu’s new amplified intrinsic fringe field MVA
technology. The fabrication process is simple and high yield. The cost iseven lower than wide viewing angle TN.
LCTp1 - 15

Optical Design of Reflective LC Mode for Wide
Viewing Angle
T. W. Ko, K.-M. Kim*, J. C. Kim**, H. C. Choi, S. H. Lee***,G.-D. Lee***LG.Philips LCD, Korea*
Dong-A Univ., Korea**
Busan Nat. Univ., Korea***Chonbuk Nat. Univ., Korea

We proposed an optical configuration of a reflective LCD for wideviewing angle and high contrast ratio. We optimize the configuration of
the proposed LC cell on the Poincaré sphere. To verify the optical
performance, we experimentally compare the proposed LC cell with theconventional LC cell.
LCTp1 - 16

Autonomous Compensation in Improving Viewing
Angle-Dependent Color Deviation and Maintaining
Contrast Ratio of Vertically-Aligned TFT-LCD
Y.-Y. Huang, Y.-M. Chen, C.-C. Lin, C.-R. Lee, H.-T. Yu
Chunghwa Picture Tubes, Taiwan

A feasible avenue has been investigated to concurrently improve thecolor deviation and contrast ratio of a preexisting 4-domain verticalalignment mode through the well utilization of the naturally different
sensitivity of electric field of two distinct liquid crystals that may result inthe sphere-like optical axis distribution in space.
34

Friday
LCTp1 - 17

December 7
Controllable Viewing Angle LCD in PVA Mode
W.-J. Shin, T. Y. Won
Inha Univ., Korea

We report our theoretical study on the viewing angle controllability of a
LCD, with a single LC layer. Our numerical simulation revealed that therange of viewing angle wherein the CR is greater than 50:1 is calculated
to be 180° for wide viewing angle mode while that for narrow viewing
angle mode being 40° with respect to the horizontal direction.
LCTp1 - 18

Investigation of Twist-to-Splay Transition Behavior of
Bistable Chiral Splay Nematic LCD with FourTerminal Electrode Structure
K.-S. Min, S.-H. Park, C. G. Jhun, J. C. Kim*, S.-B. Kwon
Hoseo Univ., Korea*
Pusan Nat. Univ., Korea

If a strong horizontal field is applied to the π twist state of the BCSN
mode, the twist-to-splay transition occurs. When the applied voltage isremoved, the re-twist process, which increases the transition time, isobserved between the grid electrodes. In this paper, electrode structure
effects on the re-twist phenomenon are described.
LCTp1 - 19

Electro-Optical Modes of Multistable Ferroelectric
LCD Cells
E. P. Pozhidaev*,**, V. G. Chigrinov*, H. Gurumurthy*,
P. Xu*, H. S. Kwok**
Hong Kong Univ. of S&T, Hong Kong**
P.N.Lebedev Phys. Inst. of Russian Ac. of Scis., Russia

The multistability effect exhibiting in FLC is responsible for three newelectrooptical modes with continuous, memorized and reversible grayscale. The modes differ among themselves under the shape of the grayscale curve that can be either S (double or single) or V-shaped. Originof the phenomenon is under consideration.
LCTp1 - 20L

Optical Design of a Transflective Dual Mode Liquid
Crystal Cell
J. H. Lee, S. R. Lee, C. P. Chen, C. G. Jhun*, T.-H. Yoon,
J. C. Kim
Pusan Nat. Univ., Korea*
Hoseo Univ., Korea

We propose an optical configuration of a transflective dual mode liquid
crystal cell, which has transmissive dynamic and reflective memory
sub-cells. It is designed to obtain wide-band characteristics in both subsells with the same compensation film, single cell-gap, and single
rubbing direction. The proposed cell shows high contrast ratio and low
driving voltage.

35

Friday
LCTp1 - 21L

December 7
Normally Black Twisted-Nematic LC Device with HighContrast Ratio
K.-H. Kim, J.-I. Baek, J. C. Kim, T.-H. Yoon
Pusan Nat. Univ., Korea

We propose an optical configuration for a normally black twistednematic liquid crystal device. We employed a half-wave plate (HWP)
and a +A plate to achieve the superior dark state. Furthermore,
excellent dispersion characteristics were also obtained in the brightstate.
LCTp1 - 22L

Single Cell Gap Transflective Low-Twist-IPS LCD
D. L. Park, D. H. Kim, I. D. Song, S. I. Park, N. Y. Lee,G. S. Lee*, J. H. Lee*, J. C. Kim*, T. H. Yoon*
LG.Philips LCD, Korea*Pusan Nat. Univ., Korea

In this paper we propose in-plane switching of a low twist liquid crystal
cell for single cell gap transflective LCD. We achieved single cell gap intransflective display without any in-cell patterned retarder by using a TN
LC layer and obtained single gamma by optimizing electrodes.
LCTp1 - 23L

Method to Improve Viewing Angle Properties of ECB
Mode LCD
C.-C. Chen, W.-Y. Ling, C.-J. Chen
Innolux Display, Taiwan

We proposed a novel compensated ECB LCD with optimized driving
voltage and SWV with inner diffusion film was used. The optical
performance of ECB parallel alignment panel can be improved. As aresult, viewing angle enlarged to 70/70/70/70(U/D/L/R) and without graylevel inversion phenomenon around polar 60 deg.
9:00 - 12:00

Main Hall C

Poster LCTp2: Novel LCDs
LCTp2 - 1

Ultraviolet Embossed Alignment Layer for Flexible
LCD
H. Hah, S.-J. Sung*, J.-K. Park
KAIST, Korea*Samsung Elect., Korea

UV embossed alignment layer for the flexible LCD was fabricated toprevent from problems encountered with thermal treatment of rubbing
process on plastic substrate. The mechanical stability was achieved bypolymer wall. In bent environment, UV embossed alignment layer for
the flexible LCD provided good LC properties and mechanical stability.

36

Friday
LCTp2 - 2

December 7
A Novel Method to Calculate Electro-Optical
Properties of Polymer Stabilized Nematic LC Cell
Y. Asakawa, T. Takahashi, S. Saito
Kogakuin Univ., Japan

A novel method is proposed to calculate theoretically the molecularalignment in LC cell taking account of the variation of the polymer
stabilization coefficient along the cell thickness direction. Due to themethod, theoretical treatments become possible for the generation of
pre-tilt angle by polymer stabilization under the voltage application.
LCTp2 - 3

Spontaneous Vertical Alignment of NanoparticlesDoped LCs and Its Application of Hybrid Aligned
Nematic Mode
C. W. Kuo, S. C. Jeng, H. L. Wang, W. Y. Teng, C. C. Liao
ITRI, Taiwan

We investigated the electro-optical properties of nanoparticles-doped
hybrid aligned nematic (HAN) cells. Nanoparticles induced thespontaneous vertical alignment of LCs, hence the vertical alignment
layers can be eliminated from traditional HAN cells. This alignment
method is suitable for the production of flexible LCD requiring low
temperature process.
LCTp2 - 4

Nano-Particle Behaviors in LC Cells Having a SingleSided Alignment Layer Structure
M. Inoue*,**, S. Tasaka*, H. Imaoka*, S. Sano***,K. Takatoh*, S. Kobayashi**Tokyo Univ. of Sci. Yamaguchi, Japan**Toyo, Japan***Ube Material Ind., Japan

We have confirmed that the amount of mobile ions in the LC cells
decreases if nanoparticles of MgO and SiO2 are doped into the liquid
crystal or alignment layer. We also have succeeded in identifying the ion
polarity by fabricating and using LC cells having a single-sided
alignment layer structure.
LCTp2 - 5

Enhancement of Contrast Ratio by Using
Ferroelectric Nanoparticles in the Alignment Layer
S. Kundu, M. Akimoto, I. Hirayama, S. Kobayashi,
K. Takatoh
Tokyo Univ. of Sci. Yamaguchi, JapanWe demonstrate the effect of the ferrorlectric nano particles dispersedin the alignment layer of a TN LC panel. In comparison to the ordinary
TN LC panel with commonly used polymide layer, the TN LC panelswithalignment layer doped with ferroelectric nanoparticles in different
percentages show much higher contrast ratio. 2.5 wt% and 5 wt% BTO
mixtures shows better performances.

37

Friday

December 7

LCTp2 - 6

Switching Characteristics of Polymer-Stabilized
Dual-Frequency LC π Cell
C.-Y. Huang, R.-X. Fung, Y.-G. Lin, C.-T. Hsieh
Nat. Changhua Univ. of Education, Taiwan

We fabricate a non-bias dual-frequency polymer-stabilized LC pi cell.
The high curing voltage and low curing intensity give the cell a low darkstate and a high bright state. The response time is under 1 ms due tothe strong electric torque. The low operating voltage of ~ 5V makes thecell compatible with conventional TFT driving voltages.
LCTp2 - 7

Dual Domain TN-LC Mode Mixed with UV-Curable
Reactive Mesogen
S. S. Kim, S. H. Hwang, S. G. Kim, Y. J. Lim,A. K. Srivastava, M.-H. Lee, S. H. Lee
Chonbuk Nat. Univ., Korea

The TN-LC has a problem of gray scale inversion. To improve thisproblem, dual domain was employed by forming different pretilt angle ineach domain using polymerization of UV-curable RM. Consequently,
dual domain was formed and gray scale inversion of mid-gray level was
improved especially in lower direction.
LCTp2 - 8

Withdrawn

LCTp2 - 9L

Nanoparticles-Induced Vertical Alignment in DyeDoped Guest-Host Liquid Crystal Display
W.-Y. Teng, S.-C. Jeng*, C.-W. Chen, C.-W. Kuo*,
Y.-R. Lin*, C.-C. Liao*, J.-T. Shy, W.-K. ChinNat. Tsing Hua Univ., Taiwan*
ITRI, Taiwan

This research is to develop a Guest-Host liquid crystal display (GHLCD) using the method of nanoparticles-induced vertical alignment(NIVA). The NIVA is very similar to the conventional homeotropic LC cellwith vertical alignment layers, and it can be applied to manufacture
flexible plastic LCD requiring the low temperature process.
9:00 - 12:00

Main Hall C

Poster LCTp3: Display Measurement
LCTp3 - 1

Multi Cell Gap Measurement for Red / Green / Blue
Pixels in LCD
Y. Li, H. Y. Yun, S. H. Ahn, C. W. Kim
Samsung Elect., Korea

A measurement method is developed to obtain the multi cell gap of Red/ Green / Blue pixels in LCD. Cell gap in different color pixels (Red, Blueand Green) may not be same due to the layer structure andmanufacture process. To obtain these cell gap results is very useful forprocess evaluation, panel design and optical properties improvement.
38

Friday
LCTp3 - 2

December 7
A New Method of Measurement to Determine thePretilt Angle and Cell Gap of a π-Cell
S.-Y. Chien, W.-C. Chen, K.-H. Yang
HannStar Display, Taiwan

A new method to determine the pretilt angle and cell gap of a π-cell is
proposed. Utilizing a curve fitting procedure that compares themeasured angular retardation of a π-cell with the theoretical retardationof a model, the pretilt angle and cell gap of a π-cell can be measured
directly instead of deriving data from measuring a corresponding
homogeneous cell.
LCTp3 - 3

Comparison between Field Sequential FLCD and the
Other Displays by Using 2D Colorimeter
Y. Kaneko*, M. Inoue*,**, K. Takatoh**, T. Miyama**,
S. Kobayashi**, J. Frausing***, J. Jensen****Toyo, Japan**Tokyo Univ. of Sci. Yamaguchi, Japan***Delta, Denmark

The Field Sequential FLCD (Ferroelectric Liquid Crystal Display) has
been reported as one of the high-speed (fast response time), superior
color reproductivity and high contrast ratio displays. We have confirmedthat Field Sequential FLCD has better ability than TN mode and OCB
mode by using ICAM as 2D colorimeter.
LCTp3 - 4

A Modeling of LC Director Using a Fast Q-Tensor
Method for Dynamics Characteristics
Y.-H. Choi, G.-D. Lee
Dong-A Univ., Korea

We modeled LC dynamics simulator using a fast Q-tensor method
which can model the configuration of the liquid crystal director fields
containing defect dynamics. From the simulation, we can observe theresults by using a fast Q-tensor method is more similar the real LC cellthan other methods.
LCTp3 - 5L

Column Spacer Design Rule for Thermal Stability of
LCD
H. C. Kim, H. S. Choi, J. I. Ryu, J. Y. Lee
BOE OptoElect. Tech., China

Thermal Stability of LCDs with Column Spacer were studied. Gravity
mura and Bubble Defect are major problem of TFT-LCD with Column
Spacer caused by Thermal Expansion of Liquid Crystal. We calculated
inner pressure of panel and applied the results to LCD panel. And weachieved stability of the wide temperature range of LCD.

39

Friday

December 7

9:00 - 12:00

Main Hall C

Poster LCTp4: New Materials
LCTp4 - 1

Fast Response LC Materials for OCB Mode LCD
Y. H. Yao, Y. P. Hsieh, P. C. Chen, J. T. Chou, P. J. Hsieh,
H. L. Kuo
ITRI, Taiwan

The performance of LC mixtures for OCB mode display is optimized by
key additional components. Two compounds with thiocyano group are
the key compounds. The resulting LC mixtures give over twice response
speed than original one. A new LC mixture, SH-4 with speed of 0.884
ms was created.
LCTp4 - 2

Studies of the Motion of Vertical Aligned Biaxial
Nematic LC
J. Y. You*, N. C. Choi**, J .Y. Jung*, K. W. Rhie*,
S. T. Shin*,***Korea Univ., Korea**Samsung Elect., Korea

We characterized ODBP-C7, a biaxial nematic liquid crystal bymeasuring with voltage-transmittance curve, and birefringence. We
observed by birefringence measurement that different transmittance
exhibited when it had with and without applied field. The motion ofvertically aligned biaxial nematic LC can be explained by two opticalcharacteristics of ODBP-C7.
LCTp4 - 3

Dye-Doped LC Electroluminescent Devices with a
Polymer-Coated Cathode Structure
M. Honma, M. Sato, T. Nose
Akita Pref. Univ., Japan

Liquid crystal electroluminescent cells are fabricated by doping organic
fluorescent dyes, and their electroluminescence properties areinvestigated. We propose a polymer-coated cathode structure to avoid
the reduction and neutralization of cations on the surface of the cathodeelectrode. It is found that improvement of the luminance is successfully
obtained.

40

Friday

December 7

LCTp4 - 4L

Nanostructured Liquid Crystal Composite with High
Kerr Constant
S.-W. Choi, S.-I. Yamamoto*, Y. Haseba*, H. Higuchi**,
H. Kikuchi**JST, Japan*
Chisso Petrochem., Japan**Kyushu Univ., Japan

We confirmed that the Kerr constant of nanostrutured chiral LC
composites was closely related to the parameters of their host LCs,
such as ∆n, ∆ε, and elastic constant ratio (K33/K11). We also succeededin obtaining very larger Kerr composites by using the novel design ruleof host LC.
9:00 - 12:00

Main Hall C

Poster LCTp5: Alignment Process (1)LCTp5 - 1

Photoalignment Properties of Brilliant Yellow Dye
Y. Oleg*,**, H. Gurumurthy*, V. G. Chigrinov*,
H. S. Kwok*, H. Hasebe***, H. Takatsu****Hong Kong Univ. of S&T, Hong Kong**
Inst. of Phys., Ukraine***Dainippon Ink & Chems., Japan

Photoalignment properties of commercially available Brilliant Yellow(BY) dye are investigated. Excellent photoalignment for different kindsof liquid crystals (LC) on BY films is observed. This alignment shows
extraordinary high photo-and thermal stability. The alignment propertiesof this dye extend the field of the sulfuric azo dyes effective forphotoalignment.
LCTp5 - 2

Protrusion-Less VA Mode Generated by Hybrid
Photo-Alignment Technology
M.-H. Wu, R.-C. Yang
AU Optronics, Taiwan

MVA is widely applied in LCD industry. However, the light-leakage ofdark-state leads to its contrast-ratio decreasing. We have developed aprotrusion-less technique for solving this drawback by hybrid photoalignment (HPA) technology. HPA combined photo-alignment
technology with fine-slit pixel design, not only achieving high CR value
but enhancing LC-alignment ability.

41

Friday
LCTp5 - 3

December 7
Optimization of Photo-Alignment Layer for In-Cell
RetardersY. Kuwana, H. Hasebe, O. Yamazaki, K. Takeuchi,
H. Takatsu, V. Chigrinov*, H. S. Kwok*
Dainippon Ink & Chems., Japan*Hong Kong Univ. of S&T, Hong Kong

We have optimized a photo-alignment layer to suit for making in-cell
retarders and achieved high thermal stability of the layer comparable tothat of conventional rubbed PI alignment layer. Patterning resolution
using optimized photo-alignment layer is also investigated.
LCTp5 - 4

Photostability Evaluation of LC Cell by Far Field
Observation
R. Yamaguchi, M. Ogura, S. Sato*
Akita Univ., Japan*Akita Pref. R&D Ctr., JapanThe real time evaluation of the LC cell photostability has been
investigated by irradiating the focused blue-violet laser beam. The LCalignment degradation and/or decomposition cause after a few minutes
irradiation. A far field pattern (FFP) appears and changes as a progressof the LC alignment degradation.
LCTp5 - 5

Ferroelectric LC Aligned on SiO2 Thin Films Using
the Ion Beam Deposition
X. Li, A. Murauski, V. Chigrinov, A. Khokhlov*,
E. Khoklov*
Hong Kong Univ. of S&T, Hong Kong*
Izovac, Belarus

We present results of a ferroelectric liquid crystal (FLC) display cells,aligned on inorganic SiO2 thin film surfaces by using oblique ion beam
sputtering deposition on the substrates. High quality alignment on large
size substrates was also easily achieved because of the linear design ofthe ion beam sputtering source, which was a big challenge for FLC on
SiOx layers before.
LCTp5 - 6L

Characteristics of Liquid Crystal Alignment in High
Aperture Ratio Fringe Field Switching Mode TFT-LCD
by using Ion Beam Alignment
S. Choi, D. Suh, Y. Park, O. Son, D. Lee, G. Son
BOE HYDIS Tech., Korea

We compared a polyimide alignment technology by ion beam to that byrubbing. Especially, we confirmed a difference of alignment ability in ashadow area of structure. We accomplished more uniform alignment by
ion beam alignment compared with rubbing in high transmittancedesign of high aperture ratio FFS (HFFS) mode.

42

Friday

December 7

LCTp5 - 7L

Pretilt Angle Control of Liquid Crystal Cell by Ion
Beam Alignment Method
H. J. Jang, J-.H. Seo, S. R. Lee, D. H. Song, T.-H. Yoon,
J. C. Kim
Pusan Nat. Univ., Korea

We investigate an Ar+ ion beam alignment process to control the pretilt
angle of a liquid crystal cell. The vertical functional molecule of thealignment material is partially destructed by the ion beam. The pretilt
angle is controlled by the remaining portion of the functional molecules.
The wide pretilt angle range can be achieved from 0 to 90 degree.
9:00 - 12:00

Main Hall C

Poster LCTp6: Alignment Process (2)LCTp6 - 1

Effect of Soaking in Acetone on Rubbed Polyimide
Film (PMDA-ODA) Studied by Grazing-Incidence XRay Diffraction: Dependence of Rubbing Condition
on Crystallization by Acetone
I. Hirosawa, T. Koganezawa, T. Sakai*
Japan Synchrotron Radiation Res. Inst., Japan*Nissan Chem. Ind., Japan

We studied effect of washing by acetone on rubbed polyimide film bygrazing incidence X-ray diffraction. Surface sensitive diffraction ofstrongly rubbed film in parallel to rubbing direction increased after
soaking acetone. No increasing was observed in non-rubbed film. Thus,
increasing of crystallinity by soaking depended on rubbing condition.
LCTp6 - 2

Washing Effect on Rubbed Polyimide Film (PMDAODA) Studied by Grazing-Incidence X-Ray Diffraction
T. Koganezawa, I. Hirosawa, T. Sakai*
Japan Synchrotron Radiation Res. Inst., Japan*Nissan Chem. Ind., Japan

Effect of washing in several kinds of solvent on rubbed polyimide(PMDA-ODA) film was investigated by grazing incidence X-ray
diffraction. Surface sensitive peaks of (002) reflection of as-rubbed
polyimide film in parallel to rubbing direction became intense after
soaking in all solvents. Thus, it was proved that washing process
improve degree of crystallinity.

43

Friday
LCTp6 - 3

December 7
Formation of Bi-Stable Anchoring Property for
Nematic LCs Induced by Unidirectional Rubbing
K. Shimoyama, T. Takahashi, S. Saito
Kogakuin Univ., Japan

A novel method is proposed to adapt bi-stable anchoring properties on
the substrate. A mixed solution of PVCi and PI was used as analignment material. It has been confirmed that two types of domains
coexist in the sample cell, and molecules of liquid crystal align with anangle of 30 deg. to 45deg. with respect to the rubbing direction.
LCTp6 - 4

LC Molecular Orientation in Membrane Films Studied
by Capacitance Measurements
R. Ito, A. Takeda, T. Nose
Akita Pref. Univ., Japan

Conformation change of the fibers in membrane film during thestretching process is investigated by SEM observations, and its LC
molecular orientation effects are evaluated by capacitancemeasurements. It is confirmed that the LC molecules are well aligned
along the fiber aligning structure and they can use to attain extremely
thick LC layer for the longer wave length electromagnetic-wave
applications.
LCTp6 - 5L

High-Precision Measurement of Polar Anchoring
Strength and Capacitance of Alignment Layers
R. Ogawa, Y. Ohno, T. Ishinabe, T. Miyashita, T. Uchida
Tohoku Univ., JapanWe devised a high precision measurement method for the polaranchoring strength and the capacitance of alignment layer. The
measured result is constant to the cell gap, therefore, we confirmed thevalidly of this method.
9:00 - 12:00

Main Hall C

Poster LCTp7: LCD Modes (2)LCTp7 - 1

Color Washout Improvement for Mobile Display
Application
Y.-C. Lu, T.-C. Cheng, S.-L. Lee, C.-J. Hu, F. Y. Gan
AU Optronics, Taiwan

In this paper, we describe a solution for MVA technology for wider
viewing angle. The MVA mode has a color-wash-out issue whenviewing the panel in oblique direction. For small size media display, we
have adapted 2G1D method to solve color washout issue. The
experiment result shows that color washout is much improved and it isalso consistent with the simulation result.

44

Friday
LCTp7 - 2

December 7
Analysis of Grayscale Inversion of In-Plane Driving
LC ModeS. J. Hsu, M. Shibazaki*, C. Y. Tsai, C. J. Chang,
S. W. Hsu, T. Inada*, W. C. Chang, D. L. Ting
TPO Displays, Taiwan*
TPO Displays Japan, Japan

We have studied a root cause of grayscale inversion of In-plane driving
liquid crystal mode by analyzing a polarized state of light by using the
Poincare sphere. According to the upper result, we could solve thegrayscale inversion by using a bi-axial retardation film. As a result, we
could confirm the excellent viewing angle performance without any
grayscale inversion.
LCTp7 - 3

Advanced AFFS+ Technology for Upgraded Outdoor
Readability
J. B. Park, S. Choi, C. H. Lee, M. C. Kim, S. J. Jang,
K. H. Park, Y. S. Cho
HYDIS Tech., Korea

We developed novel AFFS+ technology with improved outdoor
readability compared to conventional one. Instead of AR concept, AG/
AR technology is adopted for improving rainbow moiré and mirror effectwhich were induced by AR polarizer. And, the optimized structure oftouch screen (TS) including circular polarizer for AFFS+ module is
proposed.
LCTp7 - 4

Improvement of Gamma Variation by Monitoring theAngle of Polarizer Absorption Axis
C.-W. Wu, C.-J. Huang, C.-C. Hu, Y.-L. Cheng
Chunghwa Picture Tubes, Taiwan

Gamma is one of the most important optical performance
characteristics of a liquid crystal display. In this paper, we present
investigations on the relationship between gamma and polarizer. The
gamma variation caused from each polarizer variation could be
improved by monitoring and controlling the axial direction of polarizers.
LCTp7 - 5

Novel PVA Pixel Design for Mobile Touch Screen
Panel Application with Excellent Optical
Performance and Pressure Resistant Characteristics
J. H. Kim, W. S. Park, Y. S. Yeo, J. Y. Lee, S. H. Ahn,
C. W. Kim
Samsung Elect., Korea

We developed a novel PVA LCD for mobile touch screen panel (TSP)
application with excellent optical performance and pressure resistantcharacteristics by optimizing pixel structure and fabrication process.
Our new pixel design rule enabled better electro-optical properties, lessripple and bruising characteristics compared with those of theconventional PVA structure.

45

Friday
LCTp7 - 6

December 7
Numerical Simulation of LCD under Grid Computing
SystemS. Y. Cho, H. J. Yoon*, T. Y. Won
Inha Univ., Korea*Sanayi Sys., Korea

We report numerical study on the optical properties for the design of
LCD panel under grid computing environment. We compared results ofsimulation by grid computing with verified results of simulation by one
pc. We are to expect grid computing system capacity of large scale dataand simulation time reduced.
LCTp7 - 7

Optical Design of Reflective Horizontal-Switching LC
Cell for Excellent Contrast Ratio
K.-M. Kim, J.-H. Lee*, G.-D. Lee
Dong-A Univ., Korea*LG.Philips LCD, Korea

We propose an optical configuration for reflective LC cell with single
polarizer, which can show high contrast ratio by eliminating phasedispersion. The proposed optical design was performed on a Poincaré
sphere. From calculations, we confirm that the proposed configuration
can show high contrast ratio compared with conventional configuration.
LCTp7 - 8

Characteristics of Hybrid Type Alignment Film inColor TFT-LCD
M. S. Kwak, H. R. Chung, J.-Y. Lee, J. H. Choi,
K. R. Kim, S. P. Hong, C. H. Park, S. H. Choi, S. M. Lee,
C. G. Lee
LG.Philips LCD, Korea

The structural behavior of Hybrid type Alignment Film that has different
characteristics along as curing condition was analyzed by SEM and
AFM. Formation of double layer was dependant with prebaking
condition. Double layer surface morphologies was changed by thetemperature condition were analyzed by AFM. Electrical characteristics
measurements were studied as well to reveal the mechanism about thesurface change.
LCTp7 - 9

Study on Characterization of Outdoor Readability by
AFFS+ Panel with Surface Treated Acryl Cover
M. C. Kim, Y. K. Song, Y. J. Shin, C. H. Lee, S. J. Jang,
K. H. Park, Y. S. Jo
HYDIS Tech., Korea

We had announced AFFS+ technology that was adopted with additionalreflection area and anti-reflection (AR) pol. However, AR pol. has
demerits such as low hardness and high cost compared to AG pol.
Therefore we will investigate outdoor readability by AR & AG pol. in
AFFS+ with surface treated Acryl cover.

46

Friday
LCTp7 - 10

December 7
Research on Transmittance and Contrast Ratio with
Wide Color Gamut
X. P. Zheng, H. J. Liu, D. K. Yoon, S. J. Lee,
L. J. Huangfu, S. K. Lee
Beijing BOE OptoElect. Tech., China

When 19inch color gamut is changed from 72% to 92.6% by lamp andcolor filter spectrum tuning, panel transmittance increase from 6.15% to6.29% and contrast ratio is changed from 824 to 991. In this research,
the relationship between module spectrum and panel transmittance,
contrast ratio is studied.
LCTp7 - 11L

Viewing Angle Switching Panel Using Twisted
Nematic Liquid Crystal
C. P. Chen, Y.-H. Kwon, T.-H. Yoon, J. C. Kim
Pusan Nat. Univ., Korea

A viewing angle switching panel usable for the conversion of wide andnarrow viewing angle has been demonstrated. Unlike the previous
designs, this one features twisted nematic liquid crystal and it is capableof switching the viewing angle omni-directionally by electricallycontrolling the birefringence effect of the LC layer.
LCTp7 - 12L

Reduced Light Scattering Intensity from Liquid
Crystal Layers for Higher Contrast Ratio in IPS-Pro
LCDs
Y. Utsumi, D. Kajita, S. Takeda, H. Kagawa, I. Hiyama,
Y. Tomioka, K. Ono*
Hitachi, Japan*Hitachi Displays, Japan

We investigated the light scattering intensity of homogeneous alignment
liquid crystal layers. We found that the light scattering intensity was
proportional to a specific variable, consisting of the optical andmechanical properties of LCs and layer thickness. Using an optimized
LC, we created IPS-Pro LCD with a high contrast ratio.
LCTp7 - 13L

Multi-Color Liquid Crystal Display without Color
FilterS. K. Park, J. S. Kim, H. S. Cho*, C. G. Jhun**,S. B. Kwon**
Chungnam Nat. Univ., Korea*
NDIS, Korea**Hoseo Univ., Korea

To make multi-color displays without color filter, R, G, B sub-pixel
structured cholesteric LC cells have been studied. To make R, G, B
colors, UV induced pitch variant chiral dopant was added to cholestericLC mixtures. Through the optimization of the UV irradiation condition,
vivid colors were achieved.

47

Friday
LCTp7 - 14L

December 7
Bistable Characteristics of Dual Frequency Nematic
Liquid Crystal Cell with Pixel-Isolating Polymer Wall
S. R. Lee, J. H. Lee, H. J. Jang, D. H. Song, T.-H. Yoon,
J. C. Kim
Pusan Nat. Univ., Korea

We propose a bistable nematic LC mode which has π- and 2π-twisted
states. The fast switching can be achieved by using a dual frequency
LC. Due to the effect of pixel-isolating polymer wall and topologicalinequivalence between the two states, the cell has a possibility of goodmemory characteristic.
9:00 - 12:00

Main Hall C

Poster LCTp8: New Applications
LCTp8 - 1

Appication of the Cholesteric LC as a Indicator of a
Dairy Product Turned Sour
N. C. Choi*,**, J. Y. Jung*, K. W. Rhie*, S. T. Shin**
Korea Univ., Korea**
Samsung Elect., Korea*

Using the relaxation of a voltage holding ratio of twist nematic cell thatwas put in front of ChLC layer, we could know how long time did thesample pass by a change of the sample color. The color change
according to time and temperature could be a good indicator of a dairy
product or medicine turned sour.
LCTp8 - 2

Electrically-Switchable Two-Dimensional LC
Diffraction Grating
J.-I. Baek, Y.-H. Kwon, K.-H. Kim, J. C. Kim, T.-H. Yoon
Pusan Nat. Univ., Korea

A 2D-LC diffraction grating is reported. Both top and bottom substrates
induce the fringe-field, whose in-plane components are perpendicular
to each other, by which the initially vertical-aligned LC forms 4-domain
twisted-configuration in the presence of applied voltages. We
demonstrate an electrically-switchable phase grating with polarizationindependence by using the proposed structure.
LCTp8 - 3

Method for Corresponding on Sunglasses in Mobile
LCD
K.-J. Lee, D.-H. Lim, J.-M. Park, Y.-J. Kim, B.-H. Jung,
C.-H. Park
BOE HYDIS Tech., Korea

We investigated two conditions which could generate propertransmittance meeting our specification with sunglasses in mobile LCD.
In order to solve this problem, we investigated two methods – i)Application of retardation film and ii) Rubbing angle change.

48

Friday
LCTp8 - 4

December 7
Secure Display by Use of Visual Cryptography Basedon Polarization Processing
H. Yamamoto, Y. Hayasaki
Univ. of Tokushima, JapanA new type of secure display has been realized by utilizing polarization
processing. The viewing zone of a secret image is three-dimensionallylimited by a pair of encrypted images so that only one person can view
the secret information. The polarization processing improves the image
quality of the decoded images.
LCTp8 - 5L

Synthesis of New Side-On Type Photochromic
Nematic Liquid Crystalline Polymer and Its
Photomechanical Behavior
H.-J. Choi*, Y.-J. Bae*, L. C. Chien**, M.-H. Lee*,***Chonbuk Nat. Univ., Korea**Kent State Univ., USA

To explore novel photoresponsive liquid crystalline polymer (LCP)
actuator, a new difunctional photosensitive nematic monomer was
synthesized, and polymerized via acyclic diene metathesis
polymerization (ADMET) method. A brown colored free-standing
polymer film showed nematic liquid crystalline property, andphotochromic effect. The fiber drawn from the melt polymer bent
towards the direction of UV light upon irradiation.
15:10 - 16:35

Conference Hall

LCT8: Fast Response LCDs (2)Chair:
Co-Chair:
LCT8 - 1:
15:10

M. Ozaki, Osaka Univ, JapanO. Okumura, Seiko Epson, Japan
Invited Tunable LC Negative-Zero-Positive Index
Metamaterials
I. C. Khoo
Pennsylvania State Univ., USA

We describe here two types of liquid crystalline meta-materials thatpossess tunable or recon-figurable negative-zero-positive index
materials: core-shell nano-spheres randomly dispersed in aligned
nematic LCs, and planar nano-structured frequency selective surfaces
with aligned nematic LC. These meta-materials may find applications in
the next generation reflective, transmissive, modulation and switchingelements and devices in the visible – infrared – Terahertz andmicrowave regimes.

49

Friday

December 7

LCT8 - 2
15:35

Enhancement of LCDs Performance by Doping
Nanoparticles of Inorganic Materials into Their HostMedia and Interpretation of These Effects
K. Inoue*, F. Haraguchi*, H. Hoshi*, Y. Saeki*,
S. Kodaira*, M. Inoue*,**, K. Takatoh*, S. Kobayashi**Tokyo Univ. of Sci. Yamaguchi, Japan**
Toyo, Japan

It is shown that there occurs reduction of threshold voltage of TN and
ECB LCDs doped with the nanoparticles of SiO2 and MgO: thisphenomenon is shown to be attributed to the reduction of orderparameter due to the existence of these nanoparticles.
LCT8 - 3
15:55

Fast Response at Low Temperature of Nanoparticle
Doped Nematic LCs
T. Takahashi, K. Miyamoto, Y. Toko*, S. Takigawa**,
S. Yokoyama**, N. Toshima***, S. Kobayashi***
Kogakuin Univ., Japan*
Stanley Elec., Japan**Ube Ind., Japan***Tokyo Univ. of Sci. Yamaguchi, JapanAn STN-LCD doped with a special metal nanoparticles of Ag/Pd isshown to be useful for a direct dot matrix LCD and show a faster
response time by 3 to 5 times compared to those without nanoparticles.
This phenomenon is shown to be attributed to the reduction of rotational
viscosity.
LCT8 - 4
16:15

Novel PSV-LCDs with Temperature Shift Free
Operating Voltages Exhibiting High Speed
Response, and Continuous Gray Scale for Field
Sequential Full Color LCDs
T. Fujisawa, K. Takeuchi, I. Nishiyama, K. Maruyama,
K. Hatsusaka, H. Hasebe, H. Takatsu, S. Kobayashi*
Dainippon Ink & Chems., Japan*Tokyo Univ. of Sci. Yamaguchi, Japan

New photo-curable monomers and new FLC materials have beensynthesized with aiming at largely updating the performance of FLCD
exhibiting V-shaped switching called PSV-FLCD; and we succeed in
reducing their operating voltage with temperature dependence freecharacteristics. We demonstrate a field sequential full color LCD with anexcellent performance.
----- Break -----

50

Friday

December 7

16:50 - 17:50

Conference Hall

LCT9: Transflective LCDs
Chair:
Co-Chair:I. C. Khoo, Pensylvania State Univ., USA
S. Komura, Hitachi Displays, Japan

LCT9 - 1
16:50

Fast Response Transflective LCD Using OCB Mode
M. Okita, E. Kisara, K. Nishiyama, K. Nakao
Toshiba Matsushita Display Tech., Japan

We have newly developed 4.3-inch diagonal transflective LCD using
OCB (Optically Compensated Bend) mode. By using a dual gap
structure and optimizing the parameters of retardation films and a LC
cell, same gamma curves are obtained in the transmissive andreflective modes.
LCT9 - 2
17:10

Novel Transflective IPS-LCDs with Three Retardation
PlatesJ. Matsushima, S. Uehara, K. Sumiyoshi
NEC LCD Techs., Japan

We propose a novel transflective in-plane switching LCD structure withthe three retardation plates. A wide viewing characteristic intransmissive mode and a high reflectance characteristic in reflectivemode are obtained by means of the retardation plates system andvertically-driven reflective region.

BANQUET
Wednesday, December 5
19:30–21:30
Palace Ballroom (3F)
Sheraton Sapporo HotelSee page 10 for details

SID 2008
International Symposium, Seminar, and Exhibition
May 18–23, 2008
Los Angeles Convention Center
Los Angeles, California, USA
51

Friday
LCT9 - 3
17:30

December 7
Brightness Enhancement in Transflective LCD byConcentration of Uniaxially Collimated Light with a
Micro-Lenticular Lens
T. Sugita, M. Adachi, S. Komura*, T. Nagata*, M. Sasaki*,
N. Koganezawa*, S. Nishizawa*, N. Umebayashi**,K. Shimazaki**
Hitachi, Japan*
Hitachi Displays, Japan**Hitachi Maxell, Japan

We adapted a micro-lenticular lens to a transflective LCD with a small
aperture ratio to improve the transmissive efficiency by concentrating
uniaxially collimated light from a backlight developed for this lens. The
lens designed for both high brightness and a desirable diffusion of light
gives twice the luminance of a conventional backlight and enhancesbrightness over the whole display area.

Author Interviews
18:10 – 19:10

Supporting Organizations:LC Physics and Condensed Matter Forum, JLCS
Chemistry and LC Material Forum, JLCS
Liquid Crystal Display Forum, JLCSLC Photonics and Optical Device Forum, JLCSSoft Matter Forum, JLCS
Molecular Alignment Electronics
Technical Group on Information Display, ITE
Technical Committee on Electronic Information Displays, Electronics
Society, IEICEEXHIBITION
13:00–17:00
9:00–17:00
9:00–14:00

Wednesday, Dec. 5
Thursday, Dec. 6
Friday, Dec. 7

Main Hall C
Sapporo Convention CenterFree admission with your registration name tag.
52

Wednesday

December 5

Workshop on Active Matrix Displays
Wednesday, December 5
13:20 - 14:35

Main Hall A

AMD1: TV Application -LCD vs. OLEDChair:
Co-Chair:AMD1 - 1:
13:20

Y. Yamamoto, Sharp, Japan
M. Kimura, Ryukoku Univ., Japan
Invited Novel IPS-Pro Technology for FHD LCD-TVs
Driven at 120 Hz
K. Ono, R. Oke, I. Mori, K. Endo
Hitachi Displays, Japan

By combining a zigzag pixel TFT arrangement and column line
inversion driving, we reduced temperature increase of a data driver IC.
The technology offers an advantage in that 37" FHD LCDs can be
driven at 120 Hz with only eight 720-channel ICs. Furthermore, dynamic
contrast ratio, greater than 2000:1, was obtained at horizontal viewing
angles less than 160 degrees.
AMD1 - 2:
13:45

Invited Stacked Source and Drain Structure for Micro
Silicon TFT for Large Size OLED Display
N. Morosawa, T. Nakayama, T. Arai, Y. Inagaki,
K. Tatsuki, T. Urabe
Sony, Japan

A novel “Micro Silicon” technology for large size OLED display has beendeveloped. The micro crystalline silicon TFTs crystallized by dLTA
(diode Laser Thermal Anneal) system have high and stable current in alarge display area. Moreover we developed a stacked source and drain
structure for micro silicon TFT to have both high on-current and low offcurrent characteristics.
AMD1 - 3:
14:10

Invited Characteristic of the 20.8-in. WXGA Polymer
AM-OLED Integrating Micro Bump Light Scattering
Reflector
N. Kamiura
Toshiba Matsushita Display Tech., Japan

We have developed a 20.8-in. polymer AM-OLED display integrating a
new light extraction structure. We introduced a micro bump lightscattering reflector in the TFT glass substrate and investigated thecharacteristic of the display. The contrast ratio was over 300,000:1 andthe viewing angle variation of the CIE(1976) coordinate ∆u’v’ was lessthan 0.01 showing remarkable performance over wide viewing angle.
----- Break -----

53

Wednesday

December 5

15:00 - 16:20

Main Hall A

AMD2: LCD Application
Chair:
Co-Chair:T. Nishibe, Toshiba Matsushita Display Tech., Japan
S. Hirota, Hitachi, Japan

AMD2 - 1
15:00

Improvement of Motion Blur for IPS-Pro LCD-TVs
Driven by 180 Hz Impulsive Driving
I. Mori, Y. Sato, Y. Ooishi*, K. Ono
Hitachi Displays, Japan*Hitachi, Japan

We have developed a 32-in. diagonal TFT-LCD with an average
normalized blurred edge time of 6.5ms using a 180Hz frame rate driving
method that uses two driving schemes: interpolation of frametransformation from 60Hz to 90Hz, and impulsive driving of flexible
black data insertion from 90Hz to 180Hz.
AMD2 - 2
15:20

Improving Off-Axis Image Quality for Mobile-MVA
Applications
S.-C. Fan Jiang, C.-H. Lin, C.-M. Chang, C.-J. Hu,
F.-Y. Gan
AU Optronics, Taiwan

Mobile multi-domains vertically alignment (M-MVA) display has been
improved to achieve low color washout at large viewing angle. We
utilized an extra capacitor (CC.C) between CLC2 and source electrode to
induce lower pixel voltage (VC.C) and make an applicable ratio ofdifferent tilt-domains in one pixel to improve color washout.
AMD2 - 3

Withdrawn

AMD2 - 5L
15:40

A Fully Monolithic Wireless Display System
E. Zyambo, L. Lukama, C. Brown*, K. Miyata*,
M. Brownlow
Sharp Labs. of Europe, UK*
Sharp, Japan

We present a fully monolithic wireless interface for mobile displays,
fabricated with CG-Silicon thin film transistors. The new interface uses
near-field inductive coupling to transfer wirelessly both the video dataand power for the LCD and backlight. Experimental results arepresented from a 2.2" QVGA prototype demonstrating 100% wirelessoperation.

54

Wednesday
AMD2 - 4
16:00

December 5
A New Structure of Cu compound / Cu as the Metal
Electrode for TFT LCD Process
C.-N. Lin, B. Chen, F. Wu, W.-C. Tsai, C.-H. Chen,
F.-Y. Gan, P.-L. Chen
AU Optronics, Taiwan

A Cu compound\Cu structure was deposited on glass or Si substrate by
DC magnetron sputtering to form as the metal electrode layer. The Cu
compound used as the interface layer between Cu and substrate could
not only enhance the adhesion ability but also inhibit the diffusion of Cu
into substrate.
----- Break -----

16:30 - 18:00

Main Hall A

AMD3: Novel Application
Chair:
Co-Chair:AMD3 - 1:
16:30

M.-K. Han, Seoul Nat. Univ., Korea
H. Hamada, Sanyo Elec., Japan
Invited Wireless Power Transmission Sheet with
Organic FETs and Plastic MEMS Switches
M. Takamiya, T. Sekitani, Y. Miyamoto, Y. Noguchi,
H. Kawaguchi*, T. Someya, T. Sakurai
Univ. of Tokyo, Japan*Kobe Univ., Japan

Design innovations to overcome the shortcomings of a wireless powertransmission sheet made with plastic MEMS switches and organic
FETs (OFETs) for printable low-cost electronics are shown. The mixed
circuits of MEMS switches and OFETs with two different frequencies
reduce the number of coil sheets form 2 to 1.
AMD3 - 2:
16:55

Invited A CG Silicon System LCD with Optical Input
Function
C. Brown, H. Kato, K. Maeda, B. Hadwen*
Sharp, Japan*Sharp Labs. of Europe, UK

A 300ppi VGA CG Silicon System LCD with integrated optical input
function is described. The input function is achieved by integrating a 1transistor active pixel image sensor circuit within each display pixel. The
sensor fixed pattern noise is substantially reduced through the use of aself-calibration system.

55

Wed./Thu.
AMD3 - 3
17:20

December 5/6
Integrated Ambient Light Sensor in LTPS LCD Panelwith Silicon Nanocrystals Photosensor
A.-T. Cho, W.-J. Chiang*, C.-T. Peng, C.-W. Chao,
C.-S. Weng, K.-C. Lin, F.-Y. Gan, C.-J. Lin*, Y.-C. King*AU Optronics, Taiwan*
Nat. Tsing Hua Univ., Taiwan

Photosensor using Si nanocrystals layer sandwiched between twoelectrodes with capacitance structure is first time proposed to integratewith ambient-light photo-sensing application on LTPS-LCD panels. Sinanocrystals photosensor shows high optical-sensitivity in visible region
for wide ambient-light illumination, can be integrated compatibly in LTPS
with only one additional post-anneal manufacturing process.
AMD3 - 4
17:40

Behavior Characterization of p/i/n Thin-Film
Phototransistor
Y. Nishizaki*, T. Yamashita*, T. Shima*, M. Kimura*,**,
H. Hara***, S. Inoue****
Ryukoku Univ., Japan**Innovative Materials & Processing Res. Ctr., Japan***
Seiko Epson, Japan

P/i/n thin-film phototransistor is characterized, and n-type and p-type
behaviors are compared. Photo-induced current can be independent ofapplied voltage in saturation operation because depletion layer isformed in whole intrinsic region and electric field is unchanged in mostintrinsic region. This is preferable for artificial retina.

Author Interviews
18:00 – 19:00

Thursday, December 6
9:00 - 10:30

Main Hall A

AMD4/OLED4: Organic TFT & OLED
Chair:
Co-Chair:

56

J. Jang, Kyung Hee Univ., Korea
Y. Fujisaki, NHK, JapanThursday

December 6

AMD4/
Invited A Flexible, Full-Color and Top-Emission AMOLED4 - 1: OLED Display Driven by OTFTs
9:00
I. Yagi, N. Hirai, Y. Miyamoto, M. Noda, A. Imaoka,
R. Yasuda, N. Yoneya, K. Nomoto, J. Kasahara,
A. Yumoto, T. Urabe
Sony, Japan
We have demonstrated a flexible, full-color and top-emission AM-OLED
display driven by an organic TFT backplane. Organic insulators,
including a newly-developed gate insulator, are utilized for all the
insulating layers of the backplane, which remarkably enhance bothmechanical flexibility and specifications of the display.
AMD4/
Invited Active Matrix Drive of Flexible Sheet Displays
OLED4 - 2: Using MIS-Type Organic Light-Emitting Transistors
9:25
K. Kudo, K. Nakamura*, T. Hata*, A. Yoshizawa*
Chiba Univ., Japan*Pioneer, Japan
We have developed novel metal-insulator-semiconductor-type organic
light-emitting transistors (MIS-OLETs), and have improved thecharacteristics of the MIS-OLETs by optimizing the device structure. In
addition, we have demonstrated an active matrix display using these
MIS-OLETs fabricated on a plastic substrate.
AMD4/
OLED4 - 3
9:50

High-Resolution AM-OLED Display with Top-Emitting
Smart White and Overall Unified Brightness (OUB)
Technology
D.-Z. Peng, H.-L. Hsu, S.-C. Wang, P.-K. Su,
R. Nishizawa
TPO Displays, Taiwan

A 2-in. QVGA (200 ppi) full-color AM-OLED display with top emission
technology has been developed by WOLED with color filters. To improvethe uniformity of the brightness, an Overall Unified Brightness (OUB)
approach has been applied. With these technologies, a high-resolution
AM-OLED display with better front-of-screen performance for mobile
applications could be achieved.
AMD4/
OLED4 - 4
10:10

New Fast Threshold Voltage Detecting Pixel Schemefor High Resolution and Large Area AMOLED Display
H.-S. Shin, W.-K. Lee, S.-G. Park, T.-J. Ha, M.-K. Han
Seoul Nat. Univ., Korea

We propose a new polycrystalline silicon pixel scheme, which detects athreshold voltage rapidly by clock signal, for active matrix organic lightemitting diode displays. We have fabricated the pixel circuit on the glass
substrate and verified that the proposed pixel circuit could successfullycompensate the threshold voltages variation.
----- Break -----

57

Thursday

December 6

10:50 - 12:10

Main Hall A

AMD5: Organic TFT
Chair:
Co-Chair:AMD5 - 1:
10:50

K. Kudo, Chiba Univ., Japan
K. Nomoto, Sony, Japan
Invited Printed OTFT for Active Matrix Driven QR-LPD
H. Maeda, M. Matsuoka, M. Nagae, H. Honda, T. Suzuki,
H. Kobayashi
Dai Nippon Printing, Japan

Printed OTFT was fabricated with combination of printing technique andphoto-assisted surface modification to define precise electrode patternon plastic/glass substrate. Utilize this technique with solution
processable gate insulating polymer and semiconductive polymer, 100
dpi AM backplane was obtained with uniform mobility. As a result, QRLPD was successfully driven.
AMD5 - 2
11:15

Five-Inch-Diagonal-Sized Full-Color Liquid Crystal
Display Driven by Solution-Processed Organic ThinFilm Transistors
M. Kawasaki, S. Imazeki, M. Fujimori, S. Hirota, T. Arai,
T. Shiba, M. Ando
Hitachi, Japan

A five-inch-diagonal-sized QVGA liquid crystal display with organic thinfilm transistors (OTFTs) has been demonstrated. A solution-processedorganic semiconductor film, crystallized at a temperature of 100 °C, hasbeen used to obtain good uniformity as well as high mobility of OTFT
performance.
AMD5 - 3
11:35

Field-Effect Transistors Based on Liquid Crystalline
Oligothiophene Semiconductors with Solution
Process
M. Funahashi, F. Zhang, N. Tamaoki*
Univ. of Tokyo, Japan*Nat. Inst. of Advanced Ind. S&T, Japan

2-Alkyl-5’’-(p-alkylphenyl)terthiophenes were synthesized. They
exhibited highly ordered smectic phases around room temperature.
This compound was applied to thin film transistors fabricated withsolution process. The surface morphology is remarkably developed bythermal annealing at low temperature. The carrier mobility was 0.042
cm2/Vs with the on/off ratio exceeding 1000000.

58

Thursday
AMD5 - 4L
11:55

December 6
10.5-in. VGA All-printed Flexible Organic TFT
Backplane for Electrophoretic Displays
T. Okubo, Y. Kokubo, K. Hatta, R. Matsubara, M. Ishizaki,
Y. Ugajin, N. Sekine, N. Kawashima*, T. Fukuda*,
A. Nomoto*, T. Ohe*, N. Kobayashi*, K. Nomoto*,
J. Kasahara*
Toppan Printing, Japan*Sony, Japan

We have developed an all-printed flexible organic TFT with a shortchannel length below 10 µm and mobility of over 0.01 cm2/Vs using an
offset-based high-resolution printing technique and inkjet printing of
small-molecule organic semiconductor. These technologies have beensuccessfully applied to demonstrate a 10.5-in. VGA flexible activematrix electrophoretic display driven by an all-printed organic TFT
backplane.
----- Lunch -----

13:30 - 14:55

Main Hall A

AMD6: poly-Si TFT
Chair:
Co-Chair:AMD6 - 1:
13:30

H. Kumomi, Canon, JapanS. Horita, JAIST, Japan
Invited Low Temperature Polysilicon TFTs on
Polyimide Substrates for Flexible Display
Applications
G. Fortunato, M. Cuscunà, L. Maiolo, L. Mariucci,
A. Minotti, A. Pecora, D. Simeone
IFN-CNR, Italy

A novel process to fabricate non self-aligned low-temperature polysilicon TFTs on polyimide (PI) is presented. PI is spin-coated on Siwafer carrier, thus overcoming difficulties in substrate handling andeliminating the problem of plastic shrinkage, and mechanically released
from the carrier, after TFT fabrication. Electrical characteristics of thedevices are presented.
AMD6 - 2
13:55

New F-Shaped Triple Gate SLS-Processed n-Type
Poly-Si TFT for Reducing Kink Effects
S.-H. Choi, H.-S. Shin, S.-G. Park, M.-K. Han
Seoul Nat. Univ., Korea

We have proposed and fabricated a new F-shaped triple gate which
successfully suppresses the kink current of sequential lateralsolidification (SLS) - Processed polycrystalline silicon thin filmtransistors without any additional process. It is verified by experimental
and simulation results. The proposed F-shaped triple-gate TFT reduces
the kink effect of poly-Si TFT effectively.

59Thursday
AMD6 - 3
14:15

December 6
Improvement of Electrical Characteristics for
Fluorine-Ion Implanted Poly-Si TFTs Using Pr2O3
Gate Dielectric
C.-W. Chang, J.-J. Huang, H.-R. Chang, T.-F. Lei
Nat. Chiao Tung Univ., Taiwan

High-performance fluorine-ion-implanted poly-Si TFTs with high-κ
Pr2O3 gate dielectric are demonstrated. Experimental results haveshown that the fluorine-doped poly-Si channel would effectively
minimize the trap states, leading to improved electrical characteristics
even without any hydrogenation process. In addition, the presence offluorine in poly-Si TFT obviously exhibited superior electrical reliability.
AMD6 - 4
14:35

Back- and Front-Interface Trap Densities Evaluationand Stress Effect of Poly-Si TFT
K. Takatori, H. Asada, S. Kaneko
NEC LCD Techs., Japan

Using dual-gated poly-Si TFTs, the back- and front-interface trap
densities are deduced from the extracted threshold voltage and the film
thickness. When the positive-gate bias and temperature stress areapplied, the variation of the back-interface trap density shows acorrelation to the threshold voltage shift.
----- Break -----

15:10 - 16:35

Main Hall A

AMD7: Crystallization
Chair:
Co-Chair:
AMD7 - 1:
15:10

G. Fortunato, IFN-CNR, Italy
N. Matsuo, Univ. of Hyogo, Japan
Invited SELAX Technology for Poly-Si TFTs
Integrated with Amorphous-Si TFTs
T. Kaitoh, T. Miyazawa, H. Miyake, T. Noda, T. Sakai,
Y. Owaku, T. Saitoh
Hitachi Displays, JapanAn advanced LTPS (A-LTPS) manufacturing process, which enables
production of LTPS-TFTs by utilizing the conventional a-Si TFT
production line is developed. The a-Si TFT process was combined withSELAX technology to improve the carrier mobility in the region where
the peripheral circuits are to be fabricated. A 2.4-in. IPS-LCD panel was
successfully fabricated using the developed technology.

60

Thursday
AMD7 - 2:
15:35

December 6
Invited Recent Advance in Single-Shot Laser
Crystallization Method for Large Si Grain Arrays
T. Endo
ALTEDEC, Japan

We have developed an advanced phase-modulated excimer laser
annealingmethodcalled“Pseudo-Single-Nucleus
LateralCrystallization”. Two-dimensional array of large Si grains were obtainedby a single shot. Most of grains could be considered pseudo-singlecrystals. Here, we introduce our concept and present the characteristicsof the grain analyzed by various tools.
AMD7 - 3
16:00

Local Electrical Property of Coincidence Site Lattice
Boundary in Location-Controlled Silicon Islands by
Scanning Spread Resistance Microscopy
N. Matsuki, R. Ishihara, A. Baiano, Y. Hiroshima*,
S. Inoue*, C. I. M. Beenakker
Delft Univ. of Tech., The Netherlands*Seiko Epson, Japan

Local electrical property of coincidence site lattice boundary (CSLB) ina silicon island fabricated by µ-Czochralski was investigated using
scanning spread resistance microscopy (SSRM). SSRM shows noelectrical evidence at the {111}∑3 CSLB, while exhibits increase ofresistance at {221}∑9 CSLB. This results show good similarity with oursimulation.
AMD7 - 4L
16:20

Characteristics of Pseudo-Single-Crystal Si TFTs
M. Mitani, T. Endo, Y. Taniguchi, T. Katou, S. Shimoto,
T. Ohno, S. Tsuboi, T. Okada, K. Azuma, G. Kawachi,
M. Matsumura
ALTEDEC, Japan

We have characterized Si-TFTs fabricated in pseudo-single-crystal Si(PSX-Si) that was free of random grain boundaries. The field-effectmobility was 848 cm2/Vs for the n-channel TFT. This value is very close
to those for the SOI device. PSX-Si has crystal quality close to that ofsingle-crystal Si.
----- Break -----

16:45 - 18:10

Main Hall A

AMD8: SOG & µc-Si TFT
Chair:
Co-Chair:N. Morosawa, Sony, Japan
S. Utsunomiya, Seiko Epson, Japan61

Thursday

December 6

AMD8 - 1:
16:45

Invited Future Development of SOG Technologies for
Advanced Displays
T. Nishibe, H. Nakamura
Toshiba Matsushita Display Tech., Japan

Some SOG displays with circuit integration are now on market
successfully mainly in mobile phones which need to be skillfully
designed only in the limited space. For aiming a larger scale of SOG
displays, next-step development has just begun. In this paper, future
development of SOG technologies will be forecasted and discussed.
AMD8 - 2
17:10

2.4-in. VGA LTPS TFT-LCD with Low Voltage Driving
Y. F. Liao, C. H. Tsai, C. F. Su, I. C. Shih, J. P. Liu
Chunghwa Picture Tubes, Taiwan

We developed a 2.4-inch diagonal, VGA (640x480xRGB) LTPS TFTLCD with high resolution of 334 pixel-per-inch (ppi) and low voltage
driving (5V). The panel was integrated level shift, vertical de-multiplexer,gate driver circuit and DC-DC converter circuit. The DC-DC converter
implement to supply various voltages for panel circuits, therefore highvoltage crystalline-Si (c-Si) data driver IC are unnecessary.
AMD8 - 3
17:30

High Performance Bottom Gate µc-Si TFT Fabricatedby Low Damage, High Density Plasma Source
A. Hiroe, M. Hirayama, Y. Shirai, A. Teramoto, T. Ohmi
Tohoku Univ., Japan

New microwave (2.45GHz) plasma source for large area plasmachamber called CMEP is presented. µc-Si deposition trend has been
investigated using microwave plasma CVD chamber, and bottom gate
TFT has been fabricated. Mobility of 1.4cm2/Vsec and on/off ratio of
more than 105 is achieved after hydrogen plasma treatment.
AMD8 - 4
17:50

Bottom-Gate Microcrystalline Silicon TFTs on PEN
Plastic Substrate
K. Kandoussi, T. Mohammed-Brahim, K. Belarbi,
C. Simon, N. Coulon
Univ. Rennes 1, France

Bottom-gate µc-Si TFTs are fabricated on plastic PEN substrate at a
maximum process temperature of 180°C. µc-Si films are deposited by
PECVD at 150°C. These TFTs exhibit an electron mobility of 5 cm2/V.s,a low off-current even at a reverse gate voltage of -10V and stability
under operating.

Author Interviews
18:10 – 19:10

62

Friday

December 7
Friday, December 7

9:00 - 12:00

Room 107, 108

Poster AMDp: Active-Matrix Display
AMDp - 1

A Novel Pixel with 1G-2D Structure for MVA Mode
LCD
C. C. Chen, Y. C. Lin, W. M. Hung, C. J. Chen,
C. L. Yang, J. P. Pang
Innolux Display, Taiwan

We have designed a novel pixel for multi- domain vertically aligned(MVA) mode TFT-LCDs, which is based on the structure of 1G-2D,
whereas with driving method of 1G1D, by adopting two vertical parallel
data line of different layers. It provides a solution to improve off-axis
color washout of MVA mode, and has lager aperture ratio benefit
compare with conventional 1G-2D structure.
AMDp - 2

A Novel Device Structure with Low Color Shift for VA
LCD
Y. C. Lin, C. C. Chen, W. M. Hung, C. J. Chen,
C. L. Yang, J. P. Pang
Innolux Display, Taiwan

We designed a novel pixel for VA mode LCD with a series-wound thinfilm transistor circuit. With the method of 1G1D, the series-wound TFT
circuit which comprises two TFT with different charging ability canachieve the performance of eight-domain technology and thus reducethe complication of driving design.
AMDp - 3

Consistent Common Voltage MVA 8-Domain TFTLCDs
H. Y. Chen, T. H. Hsieh, C. L. Yang, J. P. Pang
Innolux Display, Taiwan

We have proposed a new MVA 8-domain pixel with 1G1D structure, andtwo series-wound TFTs structure. We focus on image sticking
characteristic in our design. By taking a diagnosis of common
inconsistent problem, we carefully adjusted the capacitances inindividual sub-pixels to make both common voltage matching, andacquire an almost image sticking free performance.

63

Friday
AMDp - 4

December 7
Additive Printing and Soft Lithography for AMLCD
Organic Backplanes
I. C. Sage, R. P. Tuffin, P. J. Rose
QinetiQ, UK

An organic active matrix backplane for driving large low resolution liquid
crystal displays has been fabricated using inkjet and microcontact
printing. Soft lithographic printing of the TFT electrodes is the only highresolution process; other steps are compatible with conventional
printing. Efficient switching is achieved using solution processedorganic semiconductor.
AMDp - 5

6,13-bis(Triisopropylsilylethynyl) Pentacene ThinFilm Transistors Using Spun on Dielectric
J.-H. Kwon, J.-H. Seo, S.-I. Shin, D. H. Choi, B.-K. Ju
Korea Univ., Korea

We present the latest results on the use of soluble materials such asorganic semiconductors (OSCs) or gate-dielectrics for simplified
processing of organic thin-film transistors (OTFTs). From electricalmeasurements, we obtained device performance characteristics suchas charge carrier mobility, threshold voltage and subthreshold voltage,
which were 6.48 × 10-3 cm2/Vs, -13 V, and 1.83 V/decade, respectively.
AMDp - 6

Organic Thin-Film Transistors with Soluble
Processing Hybrid Dielectrics
S.-I. Shin, J.-H. Kwon, J.-H. Seo, B.-K. Ju
Korea Univ., Korea

In this study, organic thin-film transistors (OTFTs) using pentacene as
an organic semiconductor have been made by hybrid dielectrics of PVP/ SOG into gate dielectrics by a spin coating method. We obtained
devices with electrical characteristics, including field-effect mobility aslarge as 1.50 cm2/Vs.
AMDp - 7

Organic Thin-Film Transistors with Ink-Jet Printing
Conductive Polymer as Top-Contact Electrodes
K. T. Lin, J. P. Lu, C. H. Chen, Y. Z. Lee, K. Cheng
ITRI, Taiwan

We report results for organic thin-film transistor (OTFT) with ink-jet
printed PEDOT as source-drain electrodes on pentacene
semiconductor. Two- step printing process and substrate heating are
required for solving the aggregation problem of water-based electrodesolution onto the hydrophobic pentacene layer.

64

Friday
AMDp - 8

December 7
Highly Sensitive Photoinduced Current
Characteristic of π-Conjugated Dendrimer Based
Organic Thin-Film Transistor
S. J. Kim, M. Y. Cho, K. Kim, J. Joo, K. H. Kim, M. J. Cho,
D. H. Choi
Korea Univ., Korea

We fabricated organic thin film transistors (OTFTs) using soluble πconjugated dendrimer as 4(HP3T)-benzene and investigated currentvoltage characteristics the OTFT devices with the condition of low
intensity irradiation. We observed the variation of the source-draincurrent with varying the energy of incident light. The photo-responsivityof our devices was higher than that in previous reports.
AMDp - 9

Characterization of Plastic-Based Organic Thin-Film
Transistors with Nanocomposite Insulators
G. H. Kim, S.-M. Yoon, C. A. Kim, K. S. Suh,
H.-M. Youn*, B.-U. Kim*
ETRI, Korea*Dongjin Semichem, Korea

Photosensitive nanocomposite materials, which were prepared byblending high-dielectric aluminum tin oxide into a photo-curable blend,exhibit excellent electrical, physical, and chemical properties. Dielectric
constants increased with increasing the nanoparticle content. In order
to explore the effects of our nanocomposite insulators, pentacene wasdeposited on various photo-cured nanocomposites, and theperformance of organic thin-film transistors was investigated.
AMDp - 10

Photoinduced Characteristics of Organic Thin-Film
Transistor Using π-Conjugated Dendrimer
M. Y. Cho, H. S. Kang, S. J. Kim, J. Joo, K. H. Kim,
M. J. Cho, D. H. Choi
Korea Univ., Korea

We fabricated OTFT device using soluble π-conjugated dendrimer,4(HPBT)-benzene, and investigated photoinduced characteristics of thedevice. The OTFT device showed a carrier mobility as high as 6×10-3
cm2/Vs in dark conditions and sensitive photoinduced characteristics
even at low light intensity. We observed the shift of threshold voltage
and saturation current in photoinduced Id-Vg characteristic curves.
AMDp - 11

Turn-on Voltage Control of Pentacene Organic ThinFilm Transistor by UV Irradiation on SiO2 Surface
K. Hong, W.-K. Kim, S. Y. Kim, B. J. Song, J.-L. Lee
Pohang Univ. of S&T, Korea

The turn-on voltage of pentacene organic thin-film transistor was shiftedfrom 6.8 to 0.4 V when the SiO2 surface was exposed to UV-light.
Photoemission spectroscopy results showed that surface silanol groups
were converted to Si3+ after UV treatment. This led to the decrease ofelectron traps at the SiO2/pentacene interface.
65

Friday
AMDp - 12

December 7
N-Channel Organic Thin-Film Transistor Based on
N,N’Dioctyl-3,4,9,10-Perylene Tetracarboxylic
Diimide Grown by Organic Vapor Deposition
K. J. Lee, S. H. Han, S. H. Lee, J. Jang
Kyung Hee Univ., Korea

We fabricated bottom contact n-type OTFT based on PTCDI-C8 grownby OVD. The surface energy was selectively controlled byoctadecyltrichlorosilane and oxygen plasma. We could obtain large
PTCDI-C8 grain on TFT area. The OTFT based on OVD grown PTCDIC8 was characterized in air without passivation.
AMDp - 13

Effect of Imidization Ratio of Polymer Gate Insulator
on Carrier Mobility of Pentacene-Based O-TFTs
T. Houryu, Y. Iimura
Tokyo Univ. of A&T, Japan

We have studied the effect of imidization ratio of polymer gate materials,
which induce homeotropic LC alignment, on the carrier mobility of
pentacene-based O-TFTs. The mobility increases with decrease ofimidization ratio, and it exceeds 1cm2/Vs. We study the origin of themobility enhancement, and clarify the positive correlation between themobility and the crystalline quality of pentacene film.
AMDp - 14

Determination of Capture Cross-Section of Trap
States from On- and Off-Current Characteristic for
Poly-Si TFTs
M. Kimura*,**, T. Tsujino**Ryukoku Univ., Japan**Innovative Materials & Processing Res. Ctr., Japan

A novel technique to determine a capture cross-section of trap states is
proposed for poly-Si TFTs. The energy profile of the trap state density isdetermined by fitting on-current characteristics of the measurement andsimulation. The capture cross-section is determined by fitting off-current
characteristics, which is 6×10-15 cm2.
AMDp - 15

The Electrical Characteristics of High-κ Pr2O3 ThinFilm Transistors with Nitrogen-Implanted Polysilicon
Films
C.-K. Deng, H.-R. Chang, B.-S. Chiou
Nat. Chiao Tung Univ., Taiwan

This paper demonstrates the poly-Si TFTs with high-κ Pr2O3 gate
dielectric and nitrogen implantation to achieve high-performance
characteristics. Nitrogen atoms with various dosages are implanted into
α-Si film before SPC annealing. The electrical characteristics of Pr2O3
poly-Si TFT with the implanted nitrogen dosage of 5×1012 cm-2 could begreatly improved.

66Friday
AMDp - 16

December 7
Performance Improvement of Poly-Si TFTs under
Reduced Thermal Activation Temperature
B. Zhang, Z. G. Meng, S. Y. Zhao, M. Wong, H.-S. Kwok
Hong Kong Univ. of S&T, Hong Kong

As thermal activation temperature reduced, p-channel poly-Si TFTspresented improvements of electrical characteristics. This was
attributed to the reduction of deep trap states generation at poly-Si/SiO2
interface during source/drain activation. Low parasitic resistance andgood reliability were still obtained for low temperature activated devices.
Thus low temperature activation process is suggested for fabrication ofhigh performance poly-Si TFTs.
AMDp - 17

Study on a New Fabrication Technology of Poly-Si
TFT by Direct Conversion from a-Si TFT
S. Nishizaki, Y. Endo, T. Fujiwara, K. Ohdaira,H. Matsumura
JAIST, Japan

This paper is to study on fundamental issues of a new fabrication
technology of poly-Si TFT, in which bottom-gate a-Si TFT is directly
converted to poly-Si TFT. It is revealed that this new approach tofabricate poly-Si TFT is feasible as a new low cost fabrication
technology of poly-Si TFT.
AMDp - 18

High Performance TFTs and PIN Sensors Fabricatedby TDX Technology
C.-W. Chao, C.-S. Weng, H.-W. Tseng, Y.-C. Lin,
C.-T. Peng, K.-C. Lin, F.-Y. Gan
AU Optronics, Taiwan

Thin-beam directional X’tallization (TDX) can form extremely longuniformly-spaced poly-Si grains without mask. We used TDX poly-Si
film as active layer of TFT and PIN sensor. We found the performanceof TFT and PIN sensor changed with the relationship between laser
scan direction and channel direction. The anisotropic properties of TDX
poly-Si film would induce the failure of LCD circuit.
AMDp - 19

SiNx/SiO2 Gate Insulator Effects on Reducing the
Leakage Current of Poly-Si TFTs Employing
Advanced Solid Phase Crystallization
C.-Y. Kim*,**, H.-K. Lee*, S.-H. Jung*, C.-D. Kim*,
I. B. Kang*, S.-G. Park**, M.-K. Han***LG.Philips LCD, Korea**Seoul Nat. Univ., Korea

Poly-Si TFTs employing advanced solid phase crystallization were
fabricated and investigated. We adopted the dual layered gate insulator
composed of silicon nitride (SiNx) and silicon oxide (SiO2). The leakage
current decreased by up to one order of magnitude compared with thatof TFT with SiO2 gate insulator and the breakdown field increased by 9
MV/cm.
67

Friday
AMDp - 20

December 7
Material Properties of Low-Temperature Si Oxide
Film Formed by Using Silicone Oil and Ozone Gas
S. Horita, K. Toriyabe, K. Nishioka
JAIST, JapanSi oxide films were deposited, using silicone oil and ozone at more than200°C. The concentrations of C, H, Fe, Ni and Na are negligible fordevice performance. The TDS spectra showed that the films containedmuch of water. However, the electrical properties are comparable withthose of TEOS film.
AMDp - 21

A Novel Structure of LTPS PMOS Process for AMLCD
Y.-W. Chen, M.-Y. Chen, Y.-C. Liao, T.-W. Chiu,
H.-C. Hsieh, K.-C. Lin, F.-Y. Gan
AU Optronics, Taiwan

A simple PMOS poly-Si TFT structure was developed. Active and dataline are patterned in one mask by partial exposure method, in which the
S/D metal direct contact to active source/drain region and connect todata line without interlayer dielectric layer. The new structure can beaccomplished with five masks.
AMDp - 22

The Influence of Gate Bias on LDD Resistance in
Poly-Si TFTs
C.-C. Chiu, Y.-J. Hsu, C.-H. Lu, C.-C. Shih, K.-C. Lin,
F.-Y. Gan
AU Optronics, Taiwan

The influence of gate bias on parasitic resistance has been investigatedin poly-Si TFTs with lightly doped drain (LDD). The most significant
point is that the carrier distribution in LDD region will be influenced bygate electric field as LDD length is smaller than 0.7µm when VGS at
20V.
AMDp - 23

Examination of Origin of Low-Temperature Process
by Excimer Laser Annealing Following Laser-Plasma
X-Ray Irradiation onto a-Si Film
K. Uejukkoku, A. Heya, S. Amano, Y. Takanashi,
S. Miyamoto, R. Takesako*, M. Adachi**, N. Matsuo,
T. Mochizuki*
Univ. of Hyogo, Japan*
Nippon Gijutsucenter, Japan**Meisyo Kiko, Japan

We investigated the crystallization by laser plasma soft-x-ray (LPX)
irradiation followed by Excimer Laser Annealing (ELA). The crystalline
fraction of poly-Si films prepared at 50 mJ/cm2 for the LPX followed by
the ELA was 80 %. The LPX irradiation before ELA decreased thecritical energy density for the start of the crystallization.

68Friday
AMDp - 24

December 7
Electrical Enhancement of Poly-Si TFTs Using FSG
ILD Passivation
J.-J. Huang, C.-W. Chang, C.-K. Dneg, T.-F. Lei
Nat. Chiao Tung Univ., Taiwan

Polycrystalline silicon TFT with fluorinated silicate glass (FSG) interlayer dielectric (ILD) passivation layer were proposed in this study. The
outdiffused fluorine atoms from FSG ILD could replace Si dangling
bonds at grain boundaries in poly-Si film. The proposed short-channel
TFT with FSG ILD passivation have electrical enhancement.
AMDp - 25

Drastic Activation of Dopant in Si Film Using ELA for
High-Performance TFT
T. Noguchi, K. Kawai, E. Kinjo, R. Nakamura, T. Miyahira,J. Kakazu, T. Suzuki*, M. Sato*
Univ. of the Ryukyus, Japan*
SEN, Japan

After laser annealing for n- and p-doped Si film, the conductivity and the
crystallinity were analyzed. The conductivity increased with improving
the crystallinity. By an optimization, 50nm-thick film shows 50ohm/sq.
for a B+ dose of 5×1015 cm-2. Laser activation is expected to source anddrain or CMOS gate for SoP.
AMDp - 26

Effect of a-Si Thickness on Ni-Mediated
Crystallization with Bottom-Gate TFT
D. H. Kang, J. H. Oh, W. H. Park, K. W. Ahn, B. S. Oh,
J. Jang, Y. J. Chang*, J. B. Choi*, H. K. Min*, C. W. Kim*
Kyung Hee Univ., Korea*
Samsung Elect., Korea

Nickel mediated crystallization of amorphous silicon has been studied
with its thickness variation on the gate insulator of a bottom-gate TFT.
With decreasing the thickness of an active layer from 150 nm to 50 nm,
threshold voltage of the bottom-gate poly-Si TFT decreases from -5.8 V
to 0.1 V and gate voltage swing changes from 1.76 to 0.49 V/dec.
AMDp - 27

Inverted-Staggered Non-Laser Poly-Si TFTs with aVery Thin a-Si Layer on Planarized Gate Insulator
K. W. Ahn, J. H. Oh, D. H. Kang, W. H. Park, B. S. Oh,
J. H. Bae, J. H. Cheon, J. Jang, Y. J. Chang*, H. K. Min*,
C. W. Kim*
Kyung Hee Univ., Korea*Samsung Elect., Korea

We studied inverted-staggered thin-film transistor (TFT) with non-laser
crystallization of a 20 nm thick amorphous silicon (a-Si:H) layer onplanarized gate insulator. The n-channel poly-Si TFT with n+ a-Si:H
source/drain contacts exhibited a field-effect mobility of 16.9 cm2/V⋅s, athreshold voltage of 1.9 V, and the minimum off-state current of ~3.0 ×
10-12 A/µm at Vds = 10 V.

69

Friday
AMDp - 28

December 7
5-in. WQVGA a-Si TFT LCD with High Reliability
Integrated Gate Driver
C. J. Shih, C. Y. Hsu, C. C. Kuo, C. P. Ku, C. K. Yu,
C. H. Tsai
Chunghwa Picture Tubes, Taiwan

A 5" WQVGA (480x272) a-Si TFT LCD has been presented using
integrated gate driver circuit. We proposed a reliable shift-register circuit
for gate driver to suppress the Vth shift of the pull-low a-Si transistor
after long time operation. By modifying the clock signals of the pulldown TFT, the periodically additional refreshment can decrease thecharge-trapping effect.
AMDp - 29

High Speed Amorphous Silicon Gate Driver
Integration in 15-in. TFT-LCD Panels with Quad-Type
Sub-Pixel Structure
S. C. Choi, Y. H. Jang, S. Y. Yoon, B. Kim, H. N. Cho,
M. D. Chun, N. W. Cho, S. H. Jo, K. S. Park, T. W. Mun,
H. Y. Kim, C. I. Ryu, C.-D. Kim, I. B. Kang
LG.Philips LCD, Korea

We successfully integrated amorphous silicon gate drivers operating at
the high driving speed (~90kHz) on 15-in. XGA TFT-LCD with a quadtype sub-pixel structure. The integrated gate drivers showed goodelectrical characteristics as well as high stability. The TFT-LCD
demonstrated good performance, which has the high costcompetitiveness with the reduced data drivers and the integrated gate
drivers.
AMDp - 30

A Novel Anti-Coupling Circuit Compensation Methodfor High Image Quality in Twisted Nematic Liquid
Crystal Displays
H. C. Liu, H. H. Wu, C. H. Yu, C. C. Tseng, K. C. Lee,Y. T. Lin, S. C. Lin, W. C. Fang, T. C. Chiu
HannStar Display, Taiwan

HannStar (HSD) present a novel anti-coupling circuit compensation
method to inverse the common voltage signal which been influenced bycoupling effect from panel feedback and gain the notable efficacy up to
30% for improving the Greenish and cross-talk and provides a dynamic
and immediate compensation without extra cost.

70Friday
AMDp - 31

December 7
Advanced Overdrive Method for Dynamic Impulsive
Driving
E. G. Chen, S.-H. Chen, T.-H. Hsieh, C.-L. Yang,
J.-P. Pang
Innolux Display, Taiwan

Tuning procedures for overdrive look-up table of flexible impulsive
driving waveforms were developed. The motion picture quality wasvisually and quantitatively improved after application of new overdrive
LUT. Different areas in overdrive LUT are applied different tuning
method. MPRT was measured on fringe-field switching displays, andBET value shows 14% improvement to 10.2ms with the new overdrive
method.
AMDp - 32

The Stability Comparison of Microcrystalline Silicon
TFTs Fabricated at Different Temperatures
Y.-H. Peng, C.-C. Chang, Y.-S. Lee, C.-H. Chen,
C.-Y. Hou, K.-F. Huang, T.-S.Huang, J.-K. Chang,
H.-T. Chou
AU Optronics, Taiwan

Temperature and pressure effect of microcrystalline silicon film
deposition have been investigated. Results show that non-porous µcSi:H film can be successfully deposited at lower temperature and higher
pressure by PECVD, and the good crystallinity of µc-Si:H film used as
the channel layer can significantly improve the stability of µc-Si:H TFTs.
AMDp - 33

Amorphous-Layer-Free and Porous-Free
Microcrystalline Silicon Grown under HighDeposition Pressure by Conventional PlasmaEnhanced Chemical Vapor Deposition
K.-F. Huang, C.-Y. Hou, Y.-S. Lee, C.-H. Chen,
Y.-H. Peng, H.-T. Chou, C.-C. Chang, T.-S. Huang,
H.-C. Chiu
AU Optronics, Taiwan

Amorphous-layer-free and porous-free microcrystalline silicon grown athigh pressure has been successfully produced by PECVD using theseeded growth method. µc-Si:H bottom gate TFTs show low
subthreshould swing (1 V/degree) and high on-current, and this could
be an alternative to polysilicon thin films for application of large-area
AMLCDs.

71

Friday
AMDp - 34

December 7
Development of Stable 14.1-in. Micro-Crystalline
Silicon AMLCD at Low Temperature
C.-C. Chang, C.-H. Chen, Y.-H. Peng, F.-S. Tseng,
C.-Y. Hou, Y.-S. Lee, K.-F. Huang, H.-T. Shih,
M.-T. Hsieh*, J.-F. Chen*
AU Optronics, Taiwan*Nat. Chiao Tung Univ., Taiwan

Bottom-gate microcrystalline silicon thin film transistors (µc-Si TFTs)
have been produced by the radio frequency glow discharge techniqueusing three different plasma treatment on the interface between
microcrystalline and SiN layers. Our first microcrystalline silicon TFTs
have better stability at high temperature stress.
AMDp - 35

Deposition of Porous-Free Microcrystalline Silicon
Film for TFT Application in Large-Size AMLCDs
Y.-S. Lee, C.-W. Lin*, C.-C. Chang, C.-Y. Hou,
K.-F. Huang, Y.-H. Peng, C.-H. Chen, J.-K. Chang,
H.-T. Chou, T.-S. Huang, H.-C. Chiu
AU Optronics, Taiwan*Tatung Univ., Taiwan

The deposition conditions containing lower plasma power, higher
pressure, and adequate argon plasma can effectively deposit thedevice-quality µc-Si:H film without porous layer. Moreover, the electricalcharacteristics of TFTs with porous-free µc-Si:H film as a channel layer
can be significantly improved as compared with that of conventional aSi:H TFTs.
AMDp - 36
AMDp - 37

Withdrawn
The High Temperature Stability of a-Si TFT Device
C.-C. Shih, C.-C. Chang, C.-S. Wei, Y.-S. Lee,
C.-H. Chen, F.-Y. Gan
AU Optronics, Taiwan

High temperature stability has been studied. It is found that theactivation energy, sub-threshold slope can be reduced due to improved
film quality. After Bias-High-Temperature Stress reliability test, the Vthshift and the ON current degradation of the improved a-Si:H TFT were
smaller than the standard TFT device.
AMDp - 38

Instability of Amorphous Silicon TFTs under AC
Drain Bias Stress
C.-C. Chiu, C.-C. Shih, K.-C. Lin, F.-Y. Gan
AU Optronics, Taiwan

The instability of amorphous silicon thin-film transistors (a-Si:H TFTs)
under AC drain bias stress has been studied for the first time. The
threshold voltage shift (∆VT) was found to be independent on the signal
frequency. In addition, the degradation of a-Si:H TFTs was associatedwith duty ratio.
72

Friday
AMDp - 39

December 7
Hydrogenated Amorphous Silicon Thin-Film
Transistors with Organic Passivation Layer
K.-L. Fang, H.-C. Wu, C.-Y. Liao, C.-C. Yang, H.-T. Lin,
C.-H. Chen
AU Optronics, Taiwan

TFT with photosensitive organic material used as passivation layer
reveals better electrical performance than that of conventional SiNx.
After Long time reliability test and stability test, this positive-tone
photosensitive organic passivation film was successfully used to reduce
process steps in our AMLCD panel.
AMDp - 40

Hydrogenated Amorphous Silicon TFT-LCD with
Novel Non-Vacuum Plasma Etching
C.-C. Yang, C.-Y. Liao, K.-L. Fang, H.-T. Lin, C.-H. Chen
AU Optronics, Taiwan

BCE TFT is at first time successfully fabricated by a non-vacuum
plasma etching. With newly developed non-vacuum plasma etching for
a-Si etching of a-Si:H TFT, the high-cost cryopump can be saved andthe production cost can be much lower than that of conventional
vacuum dry etching process.
AMDp - 41

Analysis of the Leakage Current in a-Si:H TFT Device
J. Y. Yang, Y. K. Kang, S. P. Kim, W. S. Ryu, M. S. Yang,
I. B. Kang
LG.Philips LCD, Korea

We have investigated the off-current characteristics of a-Si:H TFTs.
According to our study, a phosphorous(P) contamination is a criticalfactor which causes to increase of the off-current. It can be suppressedby plasma treatment. There are two main effects; the first, residual P
could be eliminated by etch out of a-Si:H surface. The second iscompensation of defect sites.
AMDp - 42

The Electrical Characteristic of a-Si:H TFT Device by
Back-Channel Treatment
P. M. Chen, W. Y. Lo, C. S. Wei, J. J. Shih, C. H. Shih,
M. S. Chen, F. Y. Gen, T. Huang
AU Optronics, Taiwan

The electrical characteristic changes of a-Si:H TFT device by backchannel post treatment in different gas are investigated. The VG ofminimum off-state leakage current will be shift to lower voltage by O2,
He and O2/SF6 compose gas treatment. The Bias-Temperature-Stresstests at O2/SF6 treated devices reveal the same reliability level as wellas hydrogen treatment.

73

Friday
AMDp - 43

December 7
The Effect of Passivation Materials on Electrical
Performances of a-Si:H TFTs Fabricated on a Metal
Foil
S.-Y. Park, C.-W. Han, N.-B. Choi, C.-D. Kim, I.-B. Kang
LG.Philips LCD, Korea

A concept is introduced in which two dielectrics are made cooperative in
acting as the passivation layer for a-Si:H TFTs fabricated on a metal foil.
The bilayer insulator consists of silicon nitride (SiNx) in contact with theactive layer that can prevent moisture penetration and a much thicker
acrylic polymer with good bending properties under mechanical stress.
AMDp - 44

Investigation on the Causes That Affected theChannel Length in the Thin Film Transistor Four
Mask Fabrication Process
T.-Y. Min, Z.-T. Wang, H.-J. Qiu, W.-B. Gao, S.-U. Choi,
S. K. LeeBOE OptoElect. Tech., China

To reduce the production cost and the investment in the TFT LCD
industry, the four mask fabrication process with high yield and stablecharacteristic was developed. The channel length of Thin Film
Transistor after a etch process was not only closely related photo-resist
thickness of slit area, but also depended on a Ripple of photo-resist
according to the channel slit design.
AMDp - 45

Back-Channel Treatment Effect on the Off-State
Leakage Current Suppression of a-Si TFT
C.-S. Wei, C.-H. Shih, Y.-S. Lee, C.-H. Chen,
C.-C. Chang, M.-S. Chen, F.-Y. Gan, T. Huang
AU Optronics, Taiwan

The back-channel treatment effects of N2, NH3, H2 plasma on the
suppression of off-state leakage current of a-Si:H TFTs under abacklight illumination or high temperature operation have been
investigated. The result shows that suitable back-channel plasma
treatments can significantly suppress the off-state leakage current.
AMDp - 46

Highly Leakage-Resistant Hydrogenated Amorphous
Silicon TFTs
S. Yan, O. Hung, T.-H. Hsieh, C. Yang, J.-P. Pang
Innolux Display, Taiwan

In this study, the conduction mechanism of the highly leakage-resistanthydrogenated amorphous silicon dual gate TFTs has been
demonstrated. A negatively differential resistance (NDR) is observed
due to the influence of the electric potential of the floating metal of thedual gate TFTs, which alleviates the leakage current.

74Friday
AMDp - 47

December 7
The Asymmetry Dual-Gate a-Si:H Thin Film
Transistors
C.-Y. Liang*,**, H.-L. Chen**, F.-S. Yeh*, T.-C. Chang***Nat. Tsing Hua Univ., Taiwan**
AU Optronics, Taiwan***Nat. Sun Yat-Sen Univ., Taiwan*

Asymmetry dual-gate a-Si:H thin film transistors have been fabricated ina-Si:H on bulk glass substrates. The device exhibits higher on current
than standard back channel etched thin film transistors (BCE TFT), andthe reduced parasitic capacitance makes it a suitable and applicabledevice than the conventional dual-gate a-Si:H TFT.
AMDp - 48L

Fabrication of Poly-Si TFTs on Fine Quartz Fibers for
Display Applications
A. Mimura, Y. Sugawara*, M. Hiroshima, T. Ikehara,
R. Maeda, K. Suzuki, K. Yase, I. Shuu**, A. Nakajima**,
S. Toda**, H. Koaizawa**
AIST, Japan*NAIST, Japan**
Furukawa Elec., Japan

Top-gate poly-Si TFTs were fabricated on fine quartz fibers using onedimensional substrate processing for display applications. Resist-spraycoating (MEMS process technique) was applied to treat the long fibers.
Successful operations of both n- and p-channel TFTs were confirmed.
AMDp - 49L

Organic Thin Film Transistors with Ink-jetted Organic
Semiconductor Layer and 3-in. QQVGA AM-OLEDPanelC. Harada, S. Ohta, T. Chuman, H. Ochi, H. Sato,
S. Ishizuka, A. Yoshizawa
Pioneer, Japan

Organic thin film transistors (OTFTs) that include a solution-processedgate insulator and an organic semiconductor were fabricated. The
organic semiconductor was formed using ink-jet printing. The OTFTs
showed a high mobility of 0.55 cm2/Vs. In addition, a 3-in. QQVGA
organic light-emitting diode panel driven by these OTFTs was
fabricated.
AMDp - 50L

Nucleation and Growth Dynamics of Si Grains in the
Nano-/Micro-Second Domain
T. Katou, T. Endo, S. Shimoto, Y. Taniguchi, K. Azuma,
M. Matsumura
ALTEDEC, Japan

We will present a new backward-trace method for nucleation and growth
dynamics of Si grains that occur in the nano-/micro-second time
domain. The method is applied to characterize the pseudo-singlenucleus lateral crystallization method. Defect formation during grain
growth can be categorized by the orientation of the initial nuclei.
75Friday
AMDp - 51L

December 7Growth of Ultra-Large Pseudo-Single-Crystal Si
S. Shimoto, Y. Taniguchi, T. Katou, T. Endo, T. Ohno,
K. Azuma, M. Matsumura
ALTEDEC, Japan

Arrays of large Si grains with 21 µm × 15 µm area as well as 25 µm-long
but narrow Si grains have been successfully grown by single shot
irradiation of an excimer-laser light pulse at room temperature. This
paper presents details of these results together with their origins.
AMDp - 52L

Device Simulation of Carrier Transport Parallel,
Oblique and Perpendicular to Grain Boundaries in
Doped Poly-Si Film
M. Kimura*,***Ryukoku Univ., Japan**Innovative Materials & Processing Res. Ctr., Japan

Carrier transport parallel, oblique and perpendicular to grain boundaries
in doped poly-Si film is analyzed using device simulation. Arrhenius
plots agree between experimental and simulation results. Carriertransport is dominated by phonon scattering in grains and potential
barriers at grain boundaries with consideration of height changing ofpotential barriers.
AMDp - 53L

Acceleration of Current Programming Speed for
AMOLED using Active Negative-Capacitance Circuit
C. H. Shim, R. Hattori
Kyushu Univ., Japan

Settling time of current programming for AMOLED was shortened to therange of micro-second even in 10 nA of the programming current levelby differentiator feedback using an active negative-capacitance circuit.
The circuit can be easily implemented in a conventional CMOS current
driver since neither a huge capacitance nor an additional panel circuit isrequired.
AMDp - 54L

Dual-Self-Aligned Vertical Multi-Channel Organic
Transistors
H. Naruse, S. Naka, H. Okada
Univ. of Toyama, Japan

Dual self-aligned vertical multi-channel organic transistor has proposedand demonstrated. Layout of shadow gate and transparent source/drain
are sequentially determined using dual back-surface exposure. Vertical
100 nm-channel and multi-structures are obtained using interdigital
gate electrodes. This device is promising for a back-plane with highcurrent driving capability.

76

Friday
AMDp - 55L

December 7
A New Poly-Si TFT Pixel for Digital Driving AMOLED
Displays without any Storage Capacitors
H.-S. Park, S.-H. Kuk, T.-J. Ha, H.-S. Shin, M.-K. Han
Seoul Nat. Univ., Korea

We propose a new poly-Si pixel structure for digital driving AMOLED
displays, which employs two cross-coupled inverters without any
storage capacitors. The undesirable effects by the leakage current areremoved as well as the addressing time being reduced. Due to pulldown operation, the emission time can be controlled precisely.
AMDp - 56L

Suppression of SPC-Si TFT Leakage Current Effecton Active Matrix Displays by Employing an Improved
Circular Switch
S.-G. Park, J.-H. Lee, H.-S. Park, S.-H. Kuk, M.-K. Han
Seoul Nat. Univ., Korea

We have fabricated a new SPC-Si TFT pixel, which can suppress SPCSi TFT leakage current effect on AMOLED displays, by employing a
new circular switching TFT. Our experiment result showed that the
OLED current variation of proposed pixel circuit can be suppressed lessthan 11% while that of conventional pixel was about 35%.
AMDp - 57L

a-Si:H HEX-TFTs, A New Technology for Flat Panel
Displays
H. Lee, J. S. Yoo*, C.-D. Kim*, I. B. Kang*, J. Kanicki
Univ. of Michigan, USA*LG.Philips LCD, Korea

Single and multiple Hexagonal a-Si:H TFTs were designed andfabricated. It is shown that parallel connection of those devices increase
the OLED output current to desirable value for give pixel electrodedesign. Enhanced electrical properties and stability of multiple
Hexagonal TFTs are discussed in comparison to the single standard
TFT.
AMDp - 58LLong Pulsed Laser Activation Technology for
Submicron TFTs on Glass
T. Ide, D. Iga, A. Sasaki, K. Mitsuhashi
ALTEDEC, Japan

It was find that the high resistance area due to insufficient annealing
area at the gate edge by laser activation for 30ns pulse duration can be
improved by extending the pulse duration of the laser from the results of
non-stationary heat transfer analysis and electrical characterization of
the SOI-MOSFETs (L= 0.5 µm).

77

Friday
AMDp - 59L

December 7
Effect of Plasma Pre-treatment on Nanocrystalline
Silicon Film Deposited without Substrate Heating
S. J. Kim, S. M. Han, T. J. Ha, M. K. Han
Seoul Nat. Univ., Korea

We deposited nanocrystalline silicon thin film without substrate heating.
Although there is no external source of heating, plasma of reaction
gases increases the deposition temperature. Plasma treatment on thesurface of substrate before deposition supplies thermal energy for
growth of crystalline silicon. As we performed plasma preheating,crystallinity of nc-Si film was improved while deposition temperature
was limited.
AMDp - 60L

Indium Oxide Thin-Film Transistors Fabricated by
Room Temperature RF-Magnetron Sputtering
J. H. Noh, S. Y. Ryu, C. S. Kim, S. J. Jo, H. S. Hwang,
H. K. Baik
Yonsei Univ., Korea

We have fabricated a bottom-gate In2O3 TFT with high mobility using rf
magnetron sputtering at room temperature. Device shows an average
field effect mobility of 12.3 cm2V-1s-1, and sharp on-to-off transition with
about 7 orders of magnitude. Adopting our bottom-gate In2O3 TFT, aload-resistance inverter was set up and good dynamic operation has
been demonstrated.
AMDp - 61L

Novel Si/SiN Precursor Structure for High-Qiuality
Poly-Si TFT Fabrication
T. Serikawa
Osaka Univ., Japan

A novel Si/SiN precursor structure has been proposed for fabricatinghigh grade poly-Si films. In the structure, a-Si film is directly depositedon silicon nitride film, not on SiO2 film. The a-Si films were easily
crystallized without formation of spike-like roughness. Moreover, highquality poly-Si TFTs were fabricated.
AMDp - 62L

A Novel Pixel Drive Circuit Using Double Data
Sources for Active Matrix OLED Panels
J.-H. Choi, M.-H. Jung, O.-H. Kim, H.-J. Chung*
Pohang Univ. of S&T, Korea*Kumoh Nat. Inst. of Tech., Korea

A new pixel structure composed of five TFTs and two capacitors
adopting LTPS TFTs is proposed. It can solve the problem of previously
proposed pixel scheme that driven by current programming or voltage
programming. Simulation of the proposed circuit is carried out with
SMART SPICE of RPI poly-Si TFT model.

78

Friday
AMDp - 63L

December 7
Pentacene Thin-Film Transistors with Thin Polymer
Gate Dielectric and Silver ElectrodeJ. H. Kim, K. C. Song*, K.-H. Beak, D. J. Kim*, L. M. Do
ETRI, Korea*Chungnam Nat. Univ., Korea

We report on organic transistors with a thin polymer gate dielectric
driven with low-voltage. Using low cost processible metal electrodes
such as aluminum gate and silver source/drain, 240 nm thin poly-4vinylphenol (PVP) dielectric, and pentacene semiconductor, we
obtained devices on glass with mobilities > 1cm2/Vs. As baking
temperature of PVP dielectric is increased, the mobility of TFTs is
improved.
AMDp - 64L

Improvement of Density of States in the CLC Poly-Si
using Microlens Array
N. K. Son, A. R. Kim, Y. D. Son, J. Jang
Kyung Hee Univ., Korea

High performance of CLC poly-Si thin film transistor used in AMLCD
and AMOLED applications, directly depends on the density of states(DOS) in the channel material. In this paper, we investigated the DOS of
CLC poly-Si TFTs using microlens array and conventional CLC method.
The CLC poly-Si TFTs using microlens array has lower DOS thanconventional CLC method. Also, we have compared with CLC poly-Si
TFTs and ELA poly-Si TFTs.
AMDp - 65L

A Simple High-Aperture Pixel Structure with Storage
Capacitor Electrode Covering Data Bus LineY. H. Lu, Y. T. Chen, K. H. Chen, Y. H. Lin, J. Y. Lee,
M. C. Chan
HannStar Display, Taiwan

A simple high-aperture pixel structure has been applied to small size aSi TFT-LCD devices. The high aperture is achieved by the shielding
effect resulting from storage capacitor electrodes above data bus lines.
As a result, we have developed 65% aperture ratio on a subpixel size
51x153 µm2 （2.4-in. QVGA）with traditional 5-PEPs process and highproduction yield.
AMDp - 66L<110> Orientation and Location Controlled Si Grains
Through Combined MILC and µ-Czochralski Process
C. Tao, R. Ishihara, J. W. Metselaar, C. I. M. Beenakker
Delft Univ. of Tech., The Netherlands

We propose to control the crystallographic orientation of the positioncontrolled large grains by combining the MILC poly-Si pre-cursor andexcimer laser crystallization with the µ-Czochralski process. It wasobserved that the surface crystal orientation of the large (5µm), location
controlled Si islands have a strong <110> preference without randomgrain boundaries inside the islands.

79Friday
AMDp - 67L

December 7
Enhanced Pentacene OTFT Properties with Surface
Treatment on PSPI Gate Dielectric
L.-M. Do, M.-W. Lee, K.-H. Baek, K.-C. Song, J.-H. Kim,
D.-J. Kim*, K.-J. Lee*, M.-H. Yi**
ETRI, Korea*Chungnam Nat. Univ., Korea**
Korea Res. Inst. of Chem. Tech., Korea

The pentacene organic thin field transistor (OTFT) with photosensitive
polyimide (PSPI) gate dielectric was examined with various surface
treatments. The mobility of OTFTs strongly depends on interface energy
properties between gate dielectric and semiconductor layer. Although
the OTFT mobility was decreased through PSPI gate dielectric
patterning process, the mobility was improved from 0.11 cm2/Vs to 0.75
cm2/Vs by control of surface energy with UV ozone andhexamethyldisilazane (HMDS) treatment.
13:30 - 14:55

Main Hall A

AMD9: Oxide-Semiconductor TFT
Chair:
Co-Chair:
AMD9 - 1:
13:30

M. Furuta, Kochi Univ. of Tech., Japan
T. Noguchi, Univ. of the Ryukyus, Japan
Invited Highly Stable Ga2O3-In2O3-ZnO Thin-Film
Transistors for AM-OLED Application
Y. S. Park, C. J. Kim, S. I. Kim, I. Song, J. C. Park,
H. Lim, S. W. Kim, E. Lee
SAIT, Korea

The (Ga, In) doped-ZnO TFT shows excellent electrical properties andgood stability under constant current stress. It shows a µFE of 10 cm2/
Vs, Ioff below 2 pA and Ion/Ioff ratio of above 108. The Vth shift was lessthan 0.2 V for 100 Hrs at 3 µA and 60°C.
AMD9 - 2:
13:55

Invited Amorphous In-Zn-Ga-O Based TFTs andCircuits
K. Abe, H. Kumomi, K. Nomura*, T. Kamiya**,
M. Hirano***, H. Hosono*,**,***
Canon, Japan*ERATO-SORST, JST, Japan**Tokyo Inst. of Tech., Japan***Frontier Collaborative Res. Ctr., Japan

Thin film transistors (TFTs) using amorphous In-Ga-Zn-O channels
show excellent uniformity, high saturation mobilities >10 cm2V-1s-1, low
off currents <10-12 A, small sub-threshold swings <0.2 Vdec-1, andsmall series resistances. The output of an 11-stage ring oscillator using
the TFTs is reproduced by circuit simulation with an a-Si:H TFT model.

80Friday
AMD9 - 3
14:20

December 7
4-in. QVGA AMOLED Display Driven by GaInZnO TFT
J. Y. Kwon, K. S. Son, J. S. Jung, T. S. Kim, M. K. Ryu,
K. B. Park, J. W. Kim, Y. G. Lee, C. J. Kim, S. I. Kim,
Y. S. Park, S. Y. Lee, J. M. Kim
SAIT, Korea

We demonstrated 4inch QVGA AMOLED display driven by GaInZnO
TFT. The structure of GaInZnO TFT is back channel etch which isconventional structure for a-Si TFT. The mobility of GaInZnO TFT is 2.6
cm2/Vs and Vt is 3.8V. It is thought that GaInZnO TFT could bebackplane for AMOLED TV.
AMD9 - 4L
14:40

Transparent and High-Aperture-Ratio AMOLED Panel
Using Very Stable ZnO TFTs
C.-W. Byun, C.-S. Hwang, S.-H. Ko. Park, J.-H. Shin,
M. Ryu, S. Yang, J.-I. Lee, D.-H. Cho, W.-S. Cheong,
S.-M. Yoon, H. Y. Chu, K. I. Cho
ETRI, Korea

In this paper, we represent a transparent and high-aperture-ratio
AMOLED panel applied by a new structural concept using very stableZnO TFTs. The new structural concept is that the OLED layers areoverlaid on all pixel area achieving higher aperture ratio (A/R) of 59.4%.
Also the panel emits both sides thanks to trans-parent electrodes and
TFTs. The fabricated panel size is 2.5" and its resolution is qCIF+(mono type). The transmittance of the panel is 60%.

Author Interviews
18:10 – 19:10

Supporting Organizations:LC Physics and Condensed Matter Forum, JLCS
Chemistry and LC Material Forum, JLCS
Liquid Crystal Display Forum, JLCSTechnical Group on Information Display, ITE
Technical Committee on Electronic Information Displays, Electronics
Society, IEICE
Technical Committee on Electron Devices, Electronics Society, IEICE
Technical Group of Silicon Devices and Materials, IEICE
Thin Film Materials & Devices Meeting81

Wednesday

December 5

Workshop on FPD Manufacturing,
Materials and Components
Wednesday, December 5
13:20 - 14:40

Main Hall B

FMC1: Manufacturing Technologies (1)Chair:
Co-Chair:T. Sakai, Philips Appl. Tech., The Netherlands
Y. Ukai, Sony, Japan

FMC1 - 1
13:20

Development of High Current Mass Separated Ion
Implantaion System for LTPS-TFT Manufacturing
M. Yoshida, H. Hourai, T. Sodekoda, Y. Ayame,
I. Nakamoto, K. Odagiri, Y. Kawasaki
IHI, JapanThe high current mass separated ion implantation system for LTPS-TFT
manufacturing has been developed. This system is applicable not only
to low dose implantation process such as channel and LDD doping but
also to high dose process such as Source/Drain doping with good
uniformity, high throughput and pure ion species.
FMC1 - 2
13:40

Permanent Magnet Ion Beam Analysis for the Implantof Very Large FPDs
D. Aitken
Superion, UK

A ribbon ion beam analysing magnet is described that can resolve
O2+(32) from PH2+(33) with a poor quality beam of any size. It is
compatible with straightforward modification of an unanalysed ion
doping system because the output beam is parallel to the extracted
beam and the in-vacuum magnet requires no power or cooling supplies.
FMC1 - 3:
14:00

Invited Advanced Nanoimprint Technology for
Display Applications
M. Beck, A. Löfstrand, N. Nilsson, B. Heidari
Obducat, Sweden

Different types of micro- and nano-structures can enhance theperformance of modern displays. The task of these structures is toincrease the amount of emitted light, contrast, and resolution. In thispaper we discuss how to produce these structures on both hardsubstrates and polymer sheets by using nanoimprint lithography.

82

Wednesday
FMC1 - 4:
14:20

December 5

Invited Ink-Jet Printed Self-Aligned Organic Light
Emitting Diodes and Its Application to Highly
Functional Products
H. Okada, K. Matsui, M. Yamanaka, S. Naka, M. Shibata,
M. Ohmori*, S. Ueno**, N. Kurachi*, M. Sawamura*,
M. Hattori*, T. Inoue*, T. Miyabayashi*, Y. Takao***,S. Hibino***, I. Tsuchiya***, H. Bessho***, K. Ohara****,
K. Ikeda****, H. Mizuno****, M. Ohama****, M. Hoshino****,
S. Ayukawa*****, R. Miyasato*****, N. Tsutsui*****,
N. Miura*****
Univ. of Toyama, Japan*Brother Industries, Japan**Chubu Sci. & Tech. Ctr., Japan***
Tokai Rubber Industries, Japan****Tsuchiya, Japan*****
ITES, Japan

Ink-jet printed self-aligned organic light emitting diodes (SA-OLEDs)
and its application to three kinds of prototypes have investigated. A
multicolor SA-OLED using small electrophosphorescent material, alight-emitting seal (LES) using SA-OLED and laminate process without
any vacuum, and a non-contact electromagnetic power supply for the
OLED have demonstrated. These device concepts are useful for flexible
light-emitting poster without power supply line.
----- Break -----

15:00 - 16:20

Main Hall B

FMC2: Manufacturing Technologies (2)Chair:
Co-Chair:
FMC2 - 1:
15:00

A. Abramov, Corning, USA
T. Unate, Sekisui Chem., Japan
Invited High Speed Laser Scoring of Low Coefficientof Thermal Expansion (CTE) Glass Substrates
A. Abramov, Y. Sun, N. Zhou
Corning, USA

A method to score a low thermal expansion coefficient glass with a laser
at a speed of up to 1000mm/s and above is presented. It is achieved
using a special laser beam. A consistent laser scoring process is
experimentally demonstrated using EAGLE2000 and EAGLE XG
glass substrates.

83

Wednesday
FMC2 - 2
15:20

December 5
Breakless Cutting of EAGLE XG Using Standard
Scoring Wheel
T. Ono, O. Teng*, G. Pai*
Corning Tech. Ctr., Japan*Corning Display Techs., Taiwan

The mechanism of glass sheet cutting using standard and Penett
wheels is explained as a function of key parameters. The advantage ofPenett wheel scoring is deep median crack extension, but it can beobtained with standard wheel on EAGLE XG. This provides significant
benefits, increasing panel cleanliness and strength.
FMC2 - 3:
15:40

Invited A Study on Roll-to-Roll Method for Flexible
TFT Backplane Manufacturing
T. Sakai, A. J. J. van der Horst, A. J. Hovestad,J. G. L. Otten, H. C. M. van Doremalen
Philips Appl. Techs., The Netherlands

A Roll-to-Roll based manufacturing method is studied by using various
manufacturing metrics to validate its applicability to flexible TFT
backplane manufacturing. It is revealed that in segmented form it
generates an excessive WIP resulting in long cycle time and limited
diversity in product types, while in integrated form it results in low
equipment efficiency.
FMC2 - 4
16:00

A Novel Cell Thinning Method for Liquid Crystal
Displays
Y.-C. Liu, L.-Y. Yeh, J.-W. Chwu, C.-C. Lin, M. S. Chen,
F. Y. Gan
AU Optronics, Taiwan

A vertical-spindle grinding method is applied to thin TFT-LCD cells, withhigh removal rate of 21.5µm/min and fine surface roughness of
0.343µm simultaneously. The proposed technique provides thefeasibility to produce the TFT-LCD cells composed with differentthickness TFT and CF substrates. This method also exhibits stable andpracticable for production.
----- Break -----

16:40 - 18:00

Main Hall B

FMC3: Manufacturing Technologies (3)Chair:
Co-Chair:84

L. Palmateer, Qualcomm MEMS Tech., USA
Y. Fujimoto, Dainippon Screen MFG, Japan

Wednesday
FMC3 - 1:
16:40

December 5

Invited FPD World Wide Market Overview
J. Masuda
iSuppli Japan, JapanThe total display market will pass $100 Billion in 2007, dominated by
LCD technology. While LCD is the key device in the market, othertechnologies continue to challenge it. PDP has been a key technology
for large size TV, and OLED technology has been entering for mobile
displays. In this paper, the display market trends will be described.
FMC3 - 2
17:00

Perfluoro Carbon Emission Reduction Activities inJapanese LCD Industry
K. Matsumura, S. Masui*, H. Kurokawa**, S. Mochizuki***Toshiba Matsushita Display Tech., Japan*Sharp, Japan**Hitachi, Japan***
Epson Imaging Devices, Japan

Thin Film Transistors (TFTs), which drive LCDs, use many chemicaland gas substances during the manufacturing processes, and thus
intensify the necessity to address environmental aspects. Especially,
the greenhouse gases used in etching processes and cleaning of thethin film deposition equipment are becoming a big concern in recent
years when the global warming issue has drawn worldwide attention.
FMC3 - 3
17:20

Micro-Sampling Technique for Organic Fine Particles
on FPDs
K. Horikoshi, K. Ogata, K. Hashimoto*, N. Ooki*, H. Seki*
Hitachi, Japan*
Hitachi Displays, JapanWe developed a micro-sampling method for organic fine particles,
which cause defects in FPDs. The method is capable of picking up thefine particles buried in upper layers. After picking up the particles by thismethod, we can easily identify the particles by conventional analytical
tools (FT-IR, Raman, MS, etc.) and determine the source of theparticles.
FMC3 - 4
17:40

Introduction of Defect Analysis by Cell Electrical Test
for LTPS LCD and OLED
Y. Miyake, K. Chikamatsu, J. Mizoguchi
Agilent Techs. Int. Japan, Japan

This paper proposes the defect analysis method for cell and/or module
panels using Cell-E Test. Detailed defect information used for process
feedback and further analyses is acquired without disassembling
panels, bringing more efficient analysis work. The analysis result on
TFT I-V-property, which may cause MURA, is shown as an example.

Author Interviews
18:00 – 19:00
85

Thursday

December 6
Thursday, December 6

9:00 - 12:00

Room 107, 108

Poster FMCp: FPD Manufacturing, Materials &Components
FMCp - 1

Glass-Strength Dependence of Cutting Conditions inThin Laminated TFT-LCD
S.-C. Wang, L.-Y. Yeh, C.-C. Lin, M. S. Chen, F. Y. Gan
AU Optronics, Taiwan

Considering glass-strength improvement for thin laminated TFT-LCD
manufacturing, mechanical wheel-cutting glass-separating processes
with less damage on glass edge and surface were studied by using
various wheels and different cutting conditions. The influence of scribeload and type of scribe wheel on glass cutting quality and edge strength
are experimentally investigated.
FMCp - 2

A Mathematical Model for the Single-Sided Lapping
Machine in LCD Cell Thinning Process
J. L. Hsu, J. W. Chwu, C. W. Chen, Y. C. Liu, C. C. Lin,M. S. Chen
AU Optronics, Taiwan

An abrasive approach is applied to the thinning of assembled LCD cellin a single-sided lapping machine. The process enhances the ease ofuse for portable display devices. We have developed a newmathematical model to describe the mechanism and verified the modelby tests.
FMCp - 3

Broadening Use of Light-on Pad Array Test (LoPAT)
Enabling 100% Inspection for Mobile COG Displays
K. Chikamatsu, Y. Miyake, J. Mizoguchi
Agilent Techs. Int. Japan, Japan

This paper describes the important tips for light-on pad arraytest(LoPAT) which is becoming more adopted among small-sized COG
device manufactures. And light-beam-induced current is utilized tolocate the defect’s source address, which overcomes the difficulty in theconventional LoPAT. The solution is quite beneficial to the failure
analysis work after cell inspection, especially for high resolution
displays.

86Thursday
FMCp - 4

December 6
Analysis and Solution of 3840 Bright Points Defecton TFT-LCD Mass Production
M. Zhang*,**, W. Wang*, J. S. Xue*, Z. M. Zhang****
Beijing BOE OptoElect. Tech., China**
Graduate Univ. of the Chinese Ac. of Sci., China***Inst. of Computing Tech. of the Chinese Ac. of Sci.,
China

The “3840” bright point defect is mainly caused by ESD attack using
SEM, FIB and microscope. The unsuitable PI rubbing angle in cellprocess and ESD circuit deficiency in TFT design, which can arouses
the ESD attack, is thought theoretically to be the reason of “3840” brightpoint defect.
FMCp - 5

X-1 Bright Line Defect Analysis during TFT-LCD
Production
M. Zhang*,**, J. Guo*, C. P. Long*, Z. M. Zhang***
Beijing BOE OptoElect. Tech., China**
Graduate Univ. of the Chinese Ac. of Sci., China***Inst. of Computing Tech. of the Chinese Ac. of Sci.,
China

*

The mechanism of defect formation is speculated by the production
processes and ESD theory, which leads to corrective methods. The
vacuum pad on the robot is found out to induce ESD attack. Afterchanging the pad material, charge disperses from the pad area. X-1
bright line defect occurrence ratio decreases.
FMCp - 6

Optimization of ODF Process for Mobile TFT-LCD
Manufacturing
K.-J. Lee, J.-M. Park, H.-C. Kim, J.-H. Seo, Y.-J. Kim,
B.-H. Jung, C.-H. Park
BOE HYDIS Tech., Korea

We optimized LC amount without “Bubble” and “Gap Mura” in ODF
process producing Mobile TFT-LCD with column spacer. If cell process
condition is only optimized to “Bubble”, “Gap mura” owing to cell gap
difference between active area center and edge area could be occurredby increased LC amount. We investigated the condition related LC
amount. From our investigation, the height of seal spacer as well as LC
amount in LCD panel have to be also considered to prevent “Gapmura”.

87

Thursday
FMCp - 7

December 6
Preparation of Al Doped ZnO/Ag/Al Doped ZnOMultilayer Thin Film by Facing Targets Sputtering
MethodS. M. Kim, Y. S. Rim, H. W. Choi, S. J. Park, K. H. Kim
Univ. of Kyungwon, Korea

In order to evaluate the property of AZO thin film for TCO, AZO/Ag/AZO
multilayer thin films were prepared with different thicknesses of Ag layer
without substrate heating by using FTS system. As a result, asdeposited AZO/Ag/AZO multilayer thin films were prepared with hightransmittance and low resistivity.
FMCp - 8

Development of Inductively-Coupled RF Plasma
Source for Carbon Alignment Film Deposition
T. Matsumoto, Y. Kinoshita, Y. Matsuda, Y. Andoh,
Y. Setsuhara*, Y. Iimura**
Nissin Ion Equipment, Japan*Osaka Univ., Japan**Tokyo Univ. of A&T, Japan

We have developed a carbon alignment film deposition system using
multiple inductively-coupled RF antennas. The system exhibited a highdeposition rate and uniform film thickness over an area of 445 x 335
mm2. Twisted nematic cells composed of ion-irradiated carbon films
showed a well-aligned LC texture.
FMCp - 9

Oxygen and Sulfur Hexafluoride Added Plasma Ash
Study in Reactive Ion Etch on Channel Region in TFT
Array Process
H. J. Qiu, Z. T. Wang, T. Y. Min, W. B. Gao, S.-U. Choi
Beijing Orient Elect. OptoElect. Tech., China

In order to optimize the array process of fabrication of the TFT-LCD, thephotoresist ash test and molybdenum reactive ion etching wasinvestigated. Through DOE matrix test, the influences on the ash rate,uniformity were discussed. We found that the surface oxidation of
Molybdenum is main cause of molybdenum unetch.
FMCp - 10

Large Scaled Atomic Layer Deposition Reactor for
Al2O3 in FPD Applications
K. Washio, Y. Mori, N. Miyatake, K. Murata,
Y. Sugawara*, Y. Uraoka*
Mitsui Eng. & Shipbuilding, Japan*Nara Inst. of S&T, Japan

We studied atomic layer deposition (ALD) Al2O3 films deposited in an
ALD reactor, which handles glass substrates of 370mm×470mm in size.
The ALD Al2O3 films were deposited at 80°C with plasma assisted
process. Their growth rate, thickness variation, step coverage andelectrical breakdown field were 0.16nmcycle-1, ±5%, 100% and
7.0MVcm-1, respectively.

88Thursday

December 6

FMCp - 11

Film Quality of Low Temperature Synthesized SiO2
Insulator Films by ICP-CVD Using Tetramethylsilane
H. Furuta*,***, T. Hiramatsu**,***, T. Matsuda*,***, C. Li*,***,
M. Furuta*,***, T. Hirao*,****
Kochi Univ. of Tech., Japan**Kochi Casio, Japan***
Kochi IPC, Japan

SiO2 insulator films were synthesized below 150 °C using
tetramethylsilane by ICP-CVD method. The Si-O-Si network chain
length was increased and the surface roughness was decreased with
the improvement of film qualities. Applying additional RF bias on
substrate increased breakdown voltage and also increased the peakshift of Si-O stretch.
FMCp - 12

Development of High Performance TFT-LCD’s Photoresist for 4-Mask Processing
T. Katoh, K. Ushijima, T. Fujino, Y. Yamabe, H. Muraki,
K. Nakamura
Zeon, Japan

Four Photo-resist Exposure Process (4PEP) enables the TFT array
manufacturing cost to be reduced drastically. The reproducibility of theHalf-tone film thickness of conventional photo-resists was not good. As
a result, it was difficult to control the uniformity of Half-tone film
thickness all over the large sized glass substrates. Authors developed“Continuously Variable Thickness control System (CVTS)” for new
4PEP resist.
FMCp - 13

Electrical Properties of Ion Implanted ZnO Thin Filmfor Source and Drain Regions of ZnO-TFTs
T. Matsuda*,**, M. Furuta*,**, T. Hiramatsu**,***,
H. Furuta*,**, C. Li*,**, T. Hirao*,***Kochi Univ. of Tech., Japan**
Kochi Ind. Promotion Ctr., Japan***Kochi Casio, Japan

Crystallinity and carrier mobility of sputtered ZnO were enhanced with
ion implantations and post annealing. Activation ratios of implanted ZnO
were over 100% for Al and Ga, and 15% for In, respectively. The
activation mechanism of In and the other ions were different each otheras generation of oxygen vacancy.

89Thursday
FMCp - 14

December 6
Characterization of ZnO Films Fabricated by Radio
Frequency Magnetron Sputtering under Different
Substrate Temperatures for TFTs Application
C. Li*,**, M. Furuta*,**, T. Hiramatsu**,***, T. Matsuda*,**,
H. Furuta*,**, T. Hirao*,***Kochi Univ. of Tech., Japan**
Kochi IPC, Japan***Kochi Casio, JapanThe structural, electrical and optical properties of ZnO thin films
deposited by the rf magnetron sputtering methods were investigated interms of the deposition temperature and post-annealing effects. It was
found that increased deposition temperature and post-annealing willcontribute to improve the quality of the ZnO films.
FMCp - 15

Activation Behavior of Boron Implanted Poly-Si Films
Annealed by Rapid Thermal Process
M. Furuta, H. Tsubokawa*, K. Shimamura*, T. Hirao
Kochi Univ. of Tech., Japan*Mitsui Eng. & Shipbuilding, Japan

Activation behavior of boron implanted poly-Si films has been
investigated. At the dose of 1E15 cm-2, carrier concentration exhibited
maximum at 600 °C. The reverse annealing was observed as thetemperature further increased. From SIMS studies, dopant segregationand deactivation occurred simultaneously as the temperature exceeded
600 °C.
FMCp - 16

Effect of Microstructure on Optical Properties of RfSputtered ZnO Films for ZnO-TFTs
M. Furuta*,**, M. Tachikawa***, C. Li*,**, T. Matsuda*,**,
T. Hiramatsu**,****, H. Furuta*,**, T. Hirao*,***Kochi Univ. of Tech., Japan**Kochi Ind. Promotion Ctr., Japan***Tosadenshi, Japan****Kochi Casio, Japan

Effects of microstructure on optical properties of rf-sputtered ZnO films
have been investigated. Crystallite size was increased as the rf-powerand gas ratio (O2/Ar) decreased. As the rf-power decreased and the O2/
Ar increased, optical absorption near band edge decreased.
Bombarded energetic oxygen particles will create tail states in forbidden
gap.

90

Thursday
FMCp - 17

December 6
Influence of Ar Gas on Inductively Coupled Plasma
Etching of ZnO Film in CH4/Ar
T. Hiramatsu*,***, M. Furuta**,***, C. Li**,***, H. Furuta**,***,
T. Matsuda**,***, T. Hirao**,****
Kochi Casio, Japan**Kochi Univ. of Tech., Japan***
Kochi Ind. Promotion Ctr., JapanThe effect of Ar gas concentration on the etching by ICP method in Ar/
CH4 mixture gas system has been investigated using Optical Emission
Spectroscopy. It was found that the Ar gas works two jobs, which wasremoval of deposited carbon on the films surface and the assist of ZnO
etching.
FMCp - 18

Color Properties of New Blue Pigments
T. Yanagimoto, T. Yoshioka, K. Fujishiro
Nippon Steel Chem., JapanThe new blue pigments were prepared of subphthalocyanines. They
showed bright reddish-blue color, near to the EBU blue without any
color compound, and higher contrast-ratio compared to theconventional coloring method (a mixing of PB15:6 and PV23). The
relation ship between contrast-ratio and morphology of the pigment isalso investigated.
FMCp - 19

Modified Pigment and Its Colorful Photosensitive
Composition for Color Filters
C. C. Weng
ITRI, Taiwan

A modified pigment and colorful photosensitive composition employing
the same are disclosed. The composition comprises a solvent, an
alkali-soluble resin, reactive monomer, and a modified pigment. The
modified pigments are provided with superior high contrast property,
and thus it is suitable for producing color filters.
FMCp - 20

Development of High Sensitivity - High Optical
Density Resin Black Matrix for Color TFT LCD
C. H. Park, Y. S. Na, S. J. An, J. K. Lim, M. W. Nam,
T. W. Kim, G. Y. Park, C. G. Lee
LG Philips LCD, Korea

To improve productivity of Resin Black Matrix, we developed highsensitivity RBM available at exposure energy of 40mJ/cm2. OD 4.5 /1um was prepared for Carbon Black size reduce. Straightness of RBM
was to increase flow property of pattern at oven, we implemented
adjustment of binder polymer and dispersant.

91

Thursday
FMCp - 21

December 6
Effect of Developing Solution Flux on Total Pitch ofBlack Matrix in the Pattern of Color Filters
H.-C. Wei, L.-H. Li, H.-S. Koo
Minghsin Univ. of S&T, Taiwan

From experimental results, characteristic diagram and Minitab analysis,
one of major influence factors for total pitch of resin black matrix isdeveloper flux and judge optimal developing condition. The variation ofdeveloper flux up to 60L/min can effectively control total pitch of resin
black matrix in line width below 2µm.
FMCp - 22

Evaluation and Effect of Thermal Compensation on
Developing Solution Reduction in Usage for theProcessing of Resin Black Matrix
H.-C. Wei, C.-W. Hu, Y.-L. Hsia, H.-S. Koo*
Chunghwa Picture Tubes, Taiwan*Minghsin Univ. of S&T, Taiwan

Analytic evaluation of thermal treatment on developing solution
reduction in the fabrication of resin black matrix had successfully been
demonstrated as well. The appropriate modulation of developing time,
concentration and temperature of developing solution can effectively
achieve the reduction of developing solution in usage amount and thealleviation of waste solution during production.
FMCp - 23

Development of Silsesquioxane-Type Gate InsulatingThin Films for Poly(3-Hexylthiophene)-Based FieldEffect Transistor
T. Hamada*,**, K. Tomatsu**, T. Nagase*,**,
T. Kobayashi*,**, S. Murakami*,***, M. Watanabe*,****,
H. Naito*,**, K. Matsukawa*,*****
Japan S&T Agency, Japan**
Osaka Pref. Univ., Japan***Tech. Res. Inst. of Osaka Pref., Japan****
Osaka Municipal Tech. Res. Inst., Japan

Silsesquioxane materials were prepared by a sol-gel method, whichhave many advantages such as low cost, solution processability, and soon. We have investiga surface morphology. Top-contact organic fieldeffectted polymethylsilsesquioxane (PMSQ)-type gate insulating thinfilms with good high resistivity and transistors (OFET) devices were
fabricated using PMSQ gate insulator and poly(3-hexylthiophene)(P3HT) as the organic semiconductor.

92

Thursday

December 6

FMCp - 24

Novel Negative Organic/Inorganic Hybrid Passivation
Layer Comprised of Silsesquioxane for Simplifying
Passivation Process
S. H. Kim, J. H. Chang, J. S. Jeong, J. H. Yoon,
D. H. Lee, Y. K. Kim, H. J. Kim, S. Y. Choi
Sekisui Fine Chem. Korea, Korea

We developed negative type organic/inorganic hybrid passivation layer
comprised of silsesquioxane. Because we used silsesquioxane which
has high thermal stability, could improve the decrease of transparency
and the problem of outgas at high temperature. Our materials whichused photo initiator could reduce cost. Therefore, we found that ourmaterials were adaptable to the passivation layer on TFT LCDs.
FMCp - 25

Dispersion and Preparation of Transparent
Conductive Carbon Nanotube Films
S. Manivannan, J. H. Ryu, I. O. Jeong, C. S. Lee,K. S. Kim, J. Jang, K. C. Park
Kyung Hee Univ., Korea

Single-walled carbon nanotubes dispersion in aqueous and organic
solvents was attained by a polymer wrapping functionalization.
Randomly oriented nanotube films were fabricated on glass following
the spin coating process. Optical transmittance and electrical resistivityof the films were measured. The treated tubes were characterized byelectron microscope and Raman spectroscopy.
FMCp - 26

A Novel Screen-Printable Conducting Polymer Paste
for Transparent Electrodes
Y. H. Lee, J. W. Lee, H. N. Yoon
DPI Solutions, Korea

We have developed advanced screen-printable pastes for transparent
electrodes that exhibit fine resolution of less than 70µm, which was
almost same width with the mask, by controlling the rheologicalproperties of pastes with increased thixotropy without much loss in
conductivity. They maintained exceptional environmental stability, evenwith severe condition.
FMCp - 27

Multiple Deposition of Ga-Doped ZnO Thin Films on
COP Substrates for the Fabrication of Transparent
Conductive Films
A. Miyake, T. Yamada, H. Makino, S. Kishimoto*,
N. Yamamoto, T. Yamamoto
Kochi Univ. of Tech., Japan*
Kochi Nat. College of Tech., Japan

High transparency conductive Ga-doped ZnO (GZO) was prepared onplastic substrate by multiple deposition using ion plating. The multiple
deposition limited the thermal loading to the substrate due to theplasma exposure and allowed to prepare the GZO film on plastic
substrate.
93Thursday
FMCp - 28

December 6
Understanding Optical Characteristics of a
Cholesteric Liquid Crystal Polarizer ThroughComputational Simulation
H. Cui, D. H. Lee, H. S. Lee, H. C. Yoon*, K. C. Yoon*,**,
S. T. Kim*, J. R. Park
Chosun Univ., Korea*Samsung Fine Chems., Korea**
KAIST, Korea

Understanding of optical characteristics of cholesteric liquid crystal(CLC) polarizer is essential for practical design of CLC polarizer. In thispaper, we have performed computational simulations for the effects ofdesign parameters on the optical performances of CLC polarizer.
FMCp - 29

High Gain Diffuser Film with Surface Relief of 2D
Paraboloidal Lens Array
S.-T. Hsiao, P.-H. Yao, C.-H. Tien
Nat. Chiao Tung Univ., Taiwan

A novel micro-structure diffuser film, paraboloidal lens array film
(PLAF), is provided for the backlight module of liquid-crystal display.
PLAF performing dual functions of light collection and diffusion is
proposed to combine and replace BEFs and diffusers in the backlight
module.
FMCp - 30

Luminous Characteristics of Mercury-Free Flat
Fluorescent Lamp with Surface-Type PatternedElectrode
J. Y. Kim, J. H. Yang, J. M. Heo, J. K. Lim, H.-S. Tae,
J.-H. Seo*, H. B. Yoon**, K. T. Jung**, K. S. Lee**
Kyungpook Nat. Univ., Korea*Incheon Univ., Korea**Samsung Corning, Korea

The Luminous characteristics of a surface type discharge structure withvarious patterned electrodes on 6-in. Mercury-free flat fluorescent lamp
are examined for investigating the basic property of an avoidance ofdischarge instability and an improvement of the luminous efficiency. The
discharge characteristics are measured in each case of a patterned
electrode shape and discharge gap.

94

Thursday
FMCp - 31

December 6
Effects of Driving Waveform on Discharge
Characteristics in Hg-Free Backlight Unit
J. N. Heo, J. K. Lim, H. S. Tae, J.-H. Seo*, K. T. Jung**,
K. S. Lee**
Kyungpook Nat. Univ., Korea*
Incheon Univ., Korea**Samsung Corning, Korea

This paper presents the effects of various driving waveforms on the
discharge characteristics of the Hg-free backlight unit (BLU). The sinetype driving waveform shows unstable discharge characteristics. For thesquare-type driving waveform, two types of square-type waveform, thatis, with and without a transformer, are examined.
FMCp - 32

Optimization of Discharge Gap and Gas Pressure on
Surface-Type Discharge for Scanning Mercury Free
Flat Fluorescent Lamp
J. H. Yang, J. Y. Kim, H.-S. Tae, J.-H. Seo*, H. B. Yoon**,K. T. Jung**, K. S. Lee**
Kyungpook Nat. Univ., Korea*Incheon Univ., Korea**
Samsung Corning, Korea

The discharge characteristics of surface type discharge in Hg-free backlight unit (BLU) are examined based on the variations in the discharge
gap and gas pressure for scanning BLUs. In particular, the discharge
characteristics including the luminance and luminous efficiency aremeasured relative to the discharge gap and gas pressure. Finally, thedependence of the discharge gap and gas pressure on the surface type
ac positive column discharge with two different drivers is analyzed andmeasured.
FMCp - 33

Electrooptic Characteristics of Mercury-Type Flat
Fluorescent Lamps Driven by Square Waves
Y.-Y. Kim, J.-Y. Choi, J.-H. Ko
Hallym Univ., Korea

Electrooptic characteristics of mercury-type flat fluorescent lamps(FFLs) for 32-inch backlight applications were investigated undervarious driving conditions. The optimal driving conditions for highefficiency were obtained. A linear relationship between the luminanceand the lamp current was observed, suggesting FFLs as appropriate
light sources for applying dynamic brightening technology.

95

Thursday
FMCp - 34

December 6
Optimization of LED Die Array
C. R. Ou, T.-T. Ho, J.-M. Lee
Hsiuping Inst. of Tech., Taiwan

Optimization for the LED die array is demonstrated. Thermal model withconvection-conduction mechanism and the optical throughput
simulations are considered simultaneous. Results indicate that the
optimized LED dies arrangements for thermal and optical throughput
might contradict to each other. Guidelines are suggested.
FMCp - 35

Color Mixing Characteristics in LED Backlight Unit
G. J. Park, Y. G. Kim, J. H. Yi, J. H. Kwon, J. H. Park*,
B. G. Kim*, B. C. Ahn*, H. S. Soh**
Yeungnam Univ., Korea*LG.Philips LCD, Korea**
Hoseo Univ., Korea

The color mixing and hot spots are serious challenges in developing
LED backlight units. A color mixing bar is designed to have M-type
coupling windows in front of the corresponding LEDs. The rays entering
into the color mixing bar are mixed up, and then enter into the lightguidepanel. Elimination of hot spots and color mixing of RGB LEDs are
efficiently obtained.
FMCp - 36

White Balance Draft Countermeasure in LED
Backlight
C. C. Yang, H. X. Cao, K. C. Chang
ITRI, Taiwan

For ensuring that chromaticity of predetermined white would not bechanged as time goes on, optical feedback system to detect RGB
radiant intensity distribution and feed back new driving condition isnecessary. This paper presents a new method to control light intensityof each LED in backlight.
FMCp - 37

Light-Distributing Plate for Ultra-Thin Direct LED
Backlight
C. S. Chu, Y. T. Li, C. L. Yang
ITRI, Taiwan

The thickness of a LED direct backlight system is improved to bethinned out because light-distributing plate is applied. The lightdistributing plate is placed between the LED and the diffuser plate, andlight is guided from the LED to the diffuser plate in light mixing cavity.
The light-distributing plate for adjusting uniformity of light from LED
array could be used.

96Thursday
FMCp - 38

December 6
Multi-Layered Light Guide Plate without Using
Optical Films
Y.-Y. Chang, W.-H. Yang, P.-H. Yao*
ITRI, Taiwan*Nat. Chiao Tung Univ., Taiwan

A multi-layered light guide plate (LGP) with optimized reflective prism
structure is employed to out-couple the light toward the normal-view
direction. A prototype is manufactured by UV embossing replication.
The luminance angular distribution of the multi-layered LGP shows theemitting light can be well-controlled, and a sheetless LGP is feasible.
FMCp - 39

Sheetless Integrated Light Guide Film for LCD
Backlight
W. H. Yang, Y. Y. Chang
ITRI, Taiwan

An ultra-thin sheetless light guide film (LGF) is proposed. Optimized
micro-pyramids and micro-prisms are employed to enhance the on-axis
brightness. The thickness of LGF is only 0.3 mm and we have examined
the feasibility of roll-to-roll UV embossing manufacturing. The ultra-thin
LGF would be suit for flexible backlighting or illumination.
FMCp - 40

Monolithically Fabricated Micropatterned Light
Guide Plates for Sheet-Less Backlight Unit
H.-S. Lee, J.-H. Lee*, B.-K. Lee*, W.-S. Choi*, H. Song,
H.-Y. Choi, J.-B. Yoon*
SAIT, Korea*KAIST, Korea

A light guide plate with monolithically fabricated micropatterns on its
surface was suggested. The fabricated 2 inch LGP showed an averageluminance 2878 nit and 73.3% uniformity with four 0.85cd LEDs. The
suggested monolithic LGP can reduce cost and thickness of back lightunits, and also its application fields can be extended to a flexible lightsource for flexible displays.
FMCp - 41

High Directivity Backlight with TIR Prism Sheet
T. Kunimochi, S. Suzuki, T. Yoshida, S. Kawashima,
M. Egawa
Minebea, Japan

We have developed a high directivity backlight. The light of emission
area was controlled by the concentric circular prisms on the surface ofthe light guide plate and the prism sheet. We achieved that the FWHM
of angular distribution of the proto-type backlight was 3° to 17°.

97

Thursday

December 6

FMCp - 42

The Design for Optical Prism Sheet on the Bottom of
the Directly-Under-Light Type Backlight Module
C.-F. Chen, L.-M. Lu, P.-H. Yau*, W.-H. Yang**, H.-S. Lin**
Nat. Central Univ., Taiwan*Nat. Chiao Tung Univ., Taiwan**
ITRI, Taiwan

In the directly-under-light type backlight module, uniformity is theimportant property. We put the optical prism sheet on the bottom of thebacklight module and design the prism sheet to tune the prism angle forbest uniformity. The result is not only to improve uniformity, but alsoenhance brightness slightly.
FMCp - 43

Reflective Recycling Coupling Device for Ultra-Thin
Light Guide Plate
Y.-Y. Chang, W.-H. Yang
ITRI, Taiwan

A reflective-recycling coupling device is proposed to enhance thecoupling efficiency and to perform uniform in-coupling for ultra-thin LGP.
This device can also simplify the out-coupling design of LGP and
improve the uniformity. The RRC device can be applied in the ultra-thin
LGP for flexible backlighting or illumination.
FMCp - 44

A Moiré Free Hybrid Optical Film for LCD BacklightY. H. Lin, P. H. Yao*, T. H. Lin
ITRI, Taiwan*Nat. Chiao Tung Univ., Taiwan

How to eliminate Moiré without rotating film is an important issue in
LCD. By multi-time diamond-turning, we created polygons with random
shape and distribution. Then, we form an optical film with randomization
microstructures, called a Moiré-free hybrid optical film. We successfully
eliminate Moiré and keep the ability of brightness enhancement.
FMCp - 45

Reflection-Orientated Reflector Sheet with
Microstructure-Embossing Surface for Direct-Lit
Backlight
P.-H. Yao, W. S. Yang*, C.-H. Tien
Nat. Chiao Tung Univ., Taiwan*ITRI, Taiwan

A microstructure-embossing reflector sheet (µ-ERS) performing
oriented reflection for a direct-lit backlight module is proposed. µ-ERS
designed as an anisotropic reflector providing higher intensity
distribution between two lamps to reduce lamp mura and concentrating
central-axis intensity. The design, simulation results and measurementof µ-ERS in direct-lit backlight module are demonstrated.

98Thursday

December 6

FMCp - 46

Integration of Multiple Organic Light Emitting Diodes
and a Lens for Emission Angle Control
F. Rahadian, T. Masada, I. Fujieda
Ritsumeikan Univ., JapanFor switching viewing angle and/or 3d/2d mode, we propose to integratea lens on multiple OLEDs. Angular distribution of the light emitted fromthe lens surface is altered by turning on the OLEDs selectively. Such alight source can function as a backlight for an LCD. Pixel-level
integration would allow one to construct an OLED display with similarfunctions.
FMCp - 47

Design of Output Couplers for an Edge-Lit Backlightwith Viewing-Angle Control
K. Imai, I. Fujieda
Ritsumeikan Univ., JapanA liquid crystal device inserted between a light source and a light-guideof an edge-lit backlight can control viewing range of a liquid crystal
display. An output coupler with a vertical optical window isadvantageous for uniform light extraction when a viewing angle range isswitched.
FMCp - 48

Simulation of Two Way Viewing Liquid Crystal
Display Panel with a Novel Micro Prism Array
Structure
C.-Y. Chen, T.-Y. Hsieh, Y.-M. Chen*, C.-C. Lin*,
J.-R. Sze**
Nat. Yunlin Univ. of S&T, Taiwan*Chunghwa Picture Tubes, Taiwan**Instr. Tech. Res. Ctr., Taiwan

In this paper, we propose a novel structure of micro-prism array for LCD
to perform two-way-viewing. The micro-prism array is directly stuck on
the LC panel then sent two different images from LCD into two viewers.
The simulation shown the performance of our designed 2.2" two-wayviewing LCD can be optimized.
FMCp - 49

32-in. LED Backlight Module without Fan
Y. T. Li, C. H. Fan, C. L. Yang, C. C. Lin, C. S. Chu
ITRI, Taiwan

Cut some area of the LED Backlight Module for increasing the heattransfer show in Figure 1. There are easy to increase the heat transfer
area and the manufacture for the backlight module. Because increase
the heat transfers, then can without fan and heat pipe for the backlight.

99

Thursday
FMCp - 50

December 6
A Thin Module System for LCD Backlight with theUnified Component
T.-Y. Li, T.-P. Lin, J.-M. Huang, C.-L. Tsou, C.-N. Mo
Chunghwa Picture Tubes, Taiwan

A novel backlight system which the brightness is increased 6.6% thanconventional BLU system by using the single micro-patterned film.
Using new LED package with wider radiation angle and combination
with our novel single micro- patterned film, the thickness of backlight
can be reduced 33%.
FMCp - 51

Edge-Lit Backlight Utiliizing a Laser Diode and an
Optical Fiber
Y. Inaba, Y. Nagai, I. Fujieda
Ritsumeikan Univ., Japan

We propose to guide optical power from a laser diode through an opticalfiber to a light-guide. The guided light leaks out from the grooves at the
tip of the fiber and enters the light-guide. This configuration facilitatescompact and efficient coupling between a light source and a thin lightguide.
FMCp - 52

Zernike Coefficients for the Lightguide Analysis
C. R. Ou, T.-T. Ho, R. Ho*
Hsuiping Inst. of Tech., Taiwan*
RayOpt Res., Taiwan

Analysis the deformation of the light guide is important for illumination
applications. This article presents and discusses the advantages/
drawbacks of using the Zernike coefficients on light guide deformation.
Results indicate that the summations terms of the Zernike polynomials
and boundary conditions are two most critical tasks.
FMCp - 53L

Highly Adhesive Copper Wiring for FPD using Inkjet
Printed Catalyst and Neutral Electroless Deposition
S. Fang, Q. Zhou, T. Kamakura*, H. Kitahara*,
S. Ichikawa*, M. Furusawa*, S. Inoue*
Singapore Epson Ind., Singapore*
Seiko Epson, Japan

A novel, low cost, and directly patterned Cu wiring has been developed
combining inkjet printing and neutral electroless deposition. Without
photolithography process, highly adhesive Cu wiring with the width ofca. 70 µm, thickness up to 4 µm, low resistivity of 2.4 µΩcm andadhesive force of 20 kgf/cm2, has been achieved on smooth glass
without adhesion promoter metal layer.

100Thursday
FMCp - 54L

December 6
Electrical and Optical Properties of Amorphous
Indium Zinc Oxide Thin Films by Facing Targets
Sputtering Method
Y. S. Rim, S. M. Kim, H. W. Choi, K. H. Kim
Univ. of Kyungwon, Korea

The indium zinc oxide (IZO) films were deposited by facing targets
sputtering method using an IZO target (90 wt.% In2O3 and 10 wt.%
ZnO). The electrical, optical, structural characteristics of IZO thin films
were evaluated by Hall Effect Measurement, X-Ray Diffractormeter, UV/
VIS spectrometer in visible range, scanning electron microscopy,
respectively.
FMCp - 55L

Aging Properties of ITO Films with the Oxide Buffer
Layers Grown onto PES Substrates
S. M. Lee, C. S. Kim, S. H. Sohn
Kyungpook Nat. Univ., Korea

ITO thin films with the oxide buffer layers (SiO2 and TiO2) were
deposited by a magnetron sputtering onto flexible PES substrates. The
aging properties of ITO films with the oxide buffer layers grown onto
PES substrates were investigated as a function of time placed in the air
and the vacuum.
FMCp - 56L

Optimization of Light-Output Characteristics of Flat
Fluorescent Lamps (FFLs) by Using Micro-lens
ArraysJ.-H. Park, H. S. Lee, M.-Y. Yu, Y.-Y. Kim, J.-H. Ko,
S.-E. Lee*, S.-H. Yu*
Hallym Univ., Korea*Korea Polytechnic Univ., Korea

The effect of microlens arrays on the light-output characteristics of flat
fluorescent lamps (FFLs) was investigated by experiment and a raytracing simulation method. Experimental results about viewing-angle
properties achieved by using two kinds of microlens arrays wereconsistent with those obtained from simulation works.
FMCp - 57L

Withdrawn

FMCp - 58L

Secondary Optics Design and Analysis of Power LED
H. J. Pyo, J. H. Park, Y. T. Jeong, J. S. Kim, J. T. Kim
Pukyong Nat. Univ., Korea

We designed secondary optics for light source of the display system.
We designed the extra lens of light emitting diode(LED) and simulated
it. As a result of simulation, the radiation pattern has the front forward
direction, and is diffused within 50 degree. The brightness degrades
slightly at the center.

101

Thu./Fri.
FMCp - 59L

December 6/7
Design and Fabrication of Flat Fluorescent Lamp for
LCD TV Backlight
J. Park*, J. Hur*, C. Kim*, S. Lim
Dankook Univ., Korea*Mirae Lighting, Korea

The flat fluorescent lamp (FFL) was developed as a light source for LCD
TV. The channel profile of FFL was designed to have high efficiency.
The glass-forming machine (GFM) was developed to form the channel
profile designed. The 32" FFL fabricated by using GFM showed highbrightness and high efficiency.

Friday, December 7
9:00 - 10:00

Main Hall B

FMC4: Color Filters
Chair:
Co-Chair:J.-P. Lu, ITRI, Taiwan
K. Fujishiro, Nippon Steel Chem., Japan

FMC4 - 1
9:00

Taper Shape Control of Resin Black Matrix
Containing Cardo-Type Binder
M. Higashi, Y. Murata, K. Fujino, M. Kouno, K. Fujishiro
Nippon Steel Chem., JapanThe series of black resists composed of the cardo-type binder can givethe smooth taper with even more than OD4/micrometer, whose taper
shape strongly depends on both the carbon and monomer content in
the black resist as well as the photo-process conditions.
FMC4 - 2
9:20

Precise Black Matrix Patterning by Laser Explosion
with Residue Reduction for Generation 10 Television
LCDs
T. Nagano, S. Asada*, M. Tsukagoshi, K. Fujishiro*
OMRON Laserfront, Japan*Nippon Steel Chem., Japan

Color filters of LCDs have been produced by photo lithography process
but whose reticules become much fine and large. Laser process is oneof the attractive ways for cost compression, because it directly
generates BMs without them. Precise BM patterning was achieved by
newly developed method of “laser explosion”.

102

Friday
FMC4 - 3
9:40

December 7
A 7-inch Plastic QVGA Color Filter Fabricated by AllInkjet Printing
J. P. Lu, F. K. Chen, P. C. Yeh, C. C. Hsiao, J. W. Shiu,
K. Cheng, Y. Z. Lee, F. C. Chen*
ITRI, Taiwan*Nat. Chiao Tung Univ., Taiwan

This article describes how to fabricate a 7 inch QVGA high saturation
color filter panel by all-inkjet printing technique. Besides printing thered, green and blue color resists, we fabricate the fine stripe-type
trenches for ink confining in a high throughput printing method. The
color saturation of the resulting printed color filter can reach to 67.8% of
NTSC.
----- Break -----

10:40 - 12:15

Main Hall B

FMC5: Materials
Chair:
Co-Chair:J. Koike, Tohoku Univ., Japan
T. Itoh, Corning Japan, Japan

FMC5 - 1:

Withdrawn

FMC5 - 2:
10:40

Invited Control of Shape and Self-Assembly of Metal
Nanoparticles
M. Miyake
JAIST, Japan

Gold nanoparticles (AuNPs) are prepared in liquid-phase reduction
method in the presence of discotic liquid-crystalline molecules withtriphenylene (TP) as protective agents. By the tune of π-π interaction
degree of TPs, linear 1D or hcp (2D) self-assemblies of AuTP areestablished. By UV irradiation, shape of AuTPs changed to disc.
FMC5 - 3:
11:00

Invited Possibility of Cu-Mn Alloy for TFT Gate
Electrodes
J. Koike
Tohoku Univ., Japan

Cu-Mn alloy was deposited on SiO2 or on glass substrates. After heat
treatment, the alloy film showed resistivity decrease to the level of pureCu, together with good adhesion and diffusion barrier property with thesubstrates. Ohmic contact was also obtained for ITO/Cu-Mn film both
before and after heat treatment.

103

Friday
FMC5 - 4:
11:20

December 7
Invited Transparent Conductive Ga-Doped ZnO Films
Properties on Glass, PMMA and COP Substrates
T. Yamamoto, T. Yamada, A. Miyake, T. Morizane,
T. Arimitsu, H. Makino, N. Yamamoto
Kochi Univ. of Tech., Japan

Highly transparent conductive Ga-doped ZnO films were prepared on
glass, unheated polymethyl methacrylate (PMMA) and cyclic olefin
polymer (COP) substrates by reactive plasma deposition. On both
plastic substrates, resistivity of the GZO films decreased from 2×10-3 to
5×10-4 Ωcm with increasing film thickness.
FMC5 - 5
11:40

Adhesiveless CCL Development for LCD Driver by
Polyimide Precursor Casting Method
Y. Tokuda, H. Kawasato, A. Shimada, T. Nakabayashi,
T. Suzuki
Nippon Steel Chem., JapanCCL (Copper Clad Laminate) for COF (Chip On Film) has been
manufactured by spatter plating method. For novel raw material
proposal, we improved CCL by Polyimide precursor casting method. As
a result, practicable CCL that have merits based on the casting method
was developed.
FMC5 - 6L
12:00

Spin-on Hybrid Dielectric for LCD and OLED Displays
A. Krishnamoorthy, A. Gebrebrhan, R. Spear,
M. Stifanos, M. Lowe, H. Bien, D. Yellowaga, P. Smith*
Honeywell Elect. Materials, USA*Honeywell Specialty Materials, USA

Organosiloxane based spin on planarizing dielectric was developed for
application in flat panel displays as a replacement to conformal
chemical vapor deposited SiNx. In this paper, we demonstrate thesuccessful intergation of siloxane-based materials into active matrix
TFT’s organic TFT’s, color filters for LCD, and OLED devices.
----- Lunch -----

13:30 - 14:50

Main Hall B

FMC6: Optical Films
Chair:
Co-Chair:

104

J. Rupp, Motorola, USA
K. Miyazawa, Chisso Petrochem., Japan

Friday
FMC6 - 1:
13:30

December 7
Invited Nano-Structured Mold to Attain AntiReflection on Optical Element Surface
K. Kurihara, Y. Saitou*, T. Nakano, H. Kato*, J. Tominaga
AIST, Japan*
Ito Optical Ind., Japan

We provide a novel mold to attain anti-reflection to an injected replica
upon. The mold was pro-duced with metallic nanoparticles as a mask inplasma etching. Controlling the size and space of the particles enables
to reduce the reflection of the replica surface by 1%.
FMC6 - 2
13:50

Novel Surface Treatment Film of Polarizer to Improve
Optical Properties of 32-inch OCB Mode LCD TV
J.-T. Lien*,**, S.-F. Chen*,***, C.-L. Pan*, C.-C. Chang*,
T.-Y. Lin**, C.-L. Tsou*, C.-N. Mo**
Chunghwa Picture Tubes, Taiwan**Nat. Taiwan Ocean Univ., Taiwan***
Nat. Chiao Tung Univ., Taiwan

We have developed OCB mode LCD panel possess fast response timeabout 0.98 ms and low color washout. To use novel surface-treatment
film of polarizers is useful to reduce Chroma difference (∆Cu’v’ ) of
horizontal viewing direction. The value of ∆Cu’v’ is lower than 0.02.
FMC6 - 3
14:10

Printable Thin Birefringent Film Retarders for LCD
A. Lazarev, A. Geivandov, I. Kasianova, E. Kharatiyan,
P. Lazarev, S. Palto*
Crysoptix, Russia*Inst. of Crystallography RAS, Russia

Crysoptix Ltd. has developed Thin Birefringent Films (TBF) retarders
with negative C-plate and biaxial plate functions for manufacturing via
printing technology from liquid self-assembling materials. The newcoatable sub-micron retarders exhibit high optical anisotropy, lowdepolarization, high temperature stability, and environmental durability.
The commercialization of TBF retarders on-TAC and as in-cell LCD
retarders is discussed.
FMC6 - 4
14:30

The Relationship of Adhesive Property for Optical
Film to Uniformity of TN-Mode LCD
K. Yano, T. Chiba, A. Ogasawara, N. Nitta, T. Shouda
Nitto Denko, Japan

One important issue of TN-mode LCD is the uniformity is decreased
due to the light leakage after a heating test. We found that the strain
generated in a polarizing film was changed by the physical property ofan adhesive, and thereby appearance of MURA was changed.
----- Break -----

105

Friday

December 7

15:10 - 16:30

Main Hall B

FMC7: Backlight Systems (1)Chair:
Co-Chair:P. C. -P. Chao, Nat. Chiao Tung Univ., Taiwan
M. Shinohara, Omron, Japan

FMC7 - 1
15:10

Medium Power LED for LCD Backlighting
T. Sakamoto, K. Bando
Nichia, Japan

Nichia has prepared white LED which achieved 150lm/W luminous
efficacy. Nichia have also realized mass production levels of highluminous efficacy 100lm/W LEDs. Nichia’s other advanced technology
of long operating life is applied to medium power LCD backlighting
LEDs.
FMC7 - 2
15:30

High Efficiency Ultra-Thin Direct View RGB LED
Backlight Unit Using New LED Lens
C.-W. Chiu*, C.-Y. Shen, C.-P. Chao*, J.-S. Huang,
C.-L. Wang**, H.-W. Lin**, S. Chi**, S.-Y. Tsai**Chung Yuan Christian Univ., Taiwan*
Nat. Chiao Tung Univ., Taiwan**AU Optronics, Taiwan

The objective of this study is to design a novel cone-shaped lens forachieving high optical efficiency for an ultra-thin, direct type RGB LED
backlight unit (BLU). The usage of the novel lens could replace thecommonly used diffuser plate for gaining higher efficiency and providing
satisfactory uniformity of BLU.
FMC7 - 3
15:50

RGB LED Backlight with Dynamic Gamma Correction
System
M.-D. Chou, T.-P. Lin, F.-C. Lu, M.-C. Kao, T.-C. Shen,
C.-L. Tsou, C.-N. Mo
Chunghwa Picture Tubes, Taiwan

Combination different RGB LED chip size method, WBA, area luminous
control & dynamic gamma correction applied in 37" LCD TV. The 37"
LCD TV is had not only better light efficiency, but reaching 500nits
brightness and 105% NTSC. Moreover, 1M:1 high contrast ratio andreducing 30% power consumption is also arrived.

106

Friday
FMC7 - 4
16:10

December 7
A High-Luminous Cold Cathode Fluorescent Lamp
for a Wide-Color-Gamut LCD
T. Kusunoki, T. Igarashi
Sony, JapanFor the first time, the phosphor combination of SCA, BAM:Mn, and YOX
has been introduced into CCFLs for consumer LCDs. A CCFL using
these phosphors simultaneously achieves a wide color gamut (WCG)
and high luminance. This new WCG-CCFL has a 17% higher luminancethan that of the previous WCG-CCFL.
----- Break -----

16:50 - 17:50

Main Hall B

FMC8: Backlight Systems (2)Chair:
Co-Chair:

K. Käläntär, Nippon Leiz, JapanY. Fujimura, Nitto Denko, Japan

FMC8 - 1
16:50

Round LCD Backlight for Multi-Functional Distinctive
Digital Instrument in Automotive/Avionics
Applications
K. Käläntär, H. Horiuchi, H. Ishiko
Nippon Leiz, Japan

A round backlight has been developed to combine with a newly
prototyped round LCD for multi-functional digital indicator instrument inautomotive/avionics applications. The power consumption of the unit isabout 1.43 W. The diameter and total thickness of the backlight are 74
mm and 3.52 mm, respectively.
FMC8 - 2
17:10

High Brightness and Low Sparkling Prism Sheet for
LCD Backlight
K. Hayashi, T. Yamashita, Y. Murayama, O. Numata
Mitsubishi Rayon, Japan

New commercial grade prism sheets (C series) have been developed.
The C series prism sheets use matte surfaces newly developed have
low sparkling features. Furthermore, the high-diffusing grade of C typeprism sheet can be established the excellent backlight units cost-lower
and thinner than conventional, owing to remove a diffuser.

107

Friday

December 7

FMC8 - 3
17:30

Compact Design of Light Guides Using Metal Grating
Based Polarizing Optical Controller Element
S. Banerjee, K. Nakatsuka
Sumitomo Chems., Japan

We discuss the design and simulation of metal grating based polarizing
optical elements for use in the visible portion of the electromagnetic
spectrum. We propose to integrate such elements onto the top surfaceof the light guides to polarize and control the transmitted light output.
Such elements in combination with diffusing reflectors are able torecycle light efficiently.

Author Interviews
18:10 – 19:10

Supporting Organizations:
The Japan Society for Printing Science and Technology
Japan Society of Color Material
The Technical Association of Photopolymers, Japan
Society of Photographic Science and Technology, JapanThe Society of Radtech, JapanThe Japanese Research Association of Organic Electronics Materials
Japan Printed Circuit Association

IDW ’08
The 15th International Display Workshops
December 3-5, 2008
Toki Messe
Niigata Convention Center
Niigata, JapanIDW Best Paper Award
This new award will go to the most outstanding
paper selected from those presented at IDW ’07.
The 2007 award winners will be announced on the
IDW web site:
http://www.idw.ne.jp/award.html
108

Wed./Thu.

December 5/6

Workshop on CRTs
Wednesday, December 5
13:20 - 16:20

Main Hall C

Poster CRTp: CRT Poster
CRTp - 1

Improvement in Productivity and Cost Reduction ofElectron Gun
M. W. Tang, V. K. Yap, C. T. Chan, C. C. Hwong
Chunghwa Picture Tubes, Malaysia

With the trend of high competition in CRT TV market, the production
cost played an important role in this survival battle. The major
production costs were raw material and manpower. Therefore, byapplying techniques of automation, process combination and grid parts
simplification, the productivity able to improve by 18% and the cost
reduced by 25%.

Thursday, December 6
10:40 - 10:45

Small Hall

Opening
Opening Remarks
10:40
H. Y. Chen, Chunghwa Picture Tubes, Taiwan
10:45 - 12:00

Small Hall

CRT1: History and Future of CRT
Chair:
Co-Chair:M. Maeda, Consult., JapanY. Wada, MT Picture Display, Japan

CRT1 - 1:
10:45

Invited History of CRT Development
E. YamazakiConsultant, Japan

Reviewing the development history of CRTs since the invention of K. F.
Braun in 1897, it is discussed here how the CRT contributed to thecurrent information society in the 20th century. However, as historychanges, the CRT is giving way to newly developed FPDs which willplay an important role in the digital TV era of this century.

109

Thursday

December 6

CRT1 - 2:
11:15

Invited History of Lighthouse Optical System for Dot
Mosaic Printing
T. Fujimura
Samtel Color, India

In elimination of mis-landing, the correction lens of the lighthouseencounters a theoretical performance limitation. To compensate thedeficiency, many devices have been tried. Among them, a typical device
calledParallax Method’ is reviewed with a brief history and thetheoretical background.
CRT1 - 3:
11:40

Invited The CRT Industry Needs a Coordinated Effort
for Long Term Survival
H. Y. Chen
Chunghwa Picture Tubes, Taiwan

It is a well-known fact that the demise of the CRT monitor market isunavoidable. However, it is possible to slow, or even reverse, the CRT
TV market’s declining trend. This would require the CRT industry to lookbeyond conventional thinking and develop a coordinated strategy toensure long-term survival.
----- Lunch -----

13:30 - 14:40

Small Hall

CRT2: CRT Deflection System
Chair:
Co-Chair:
CRT2 - 1:
13:30

T. Saito, Tokyo Cathode Lab., JapanK. B. Son, LP Displays, Korea
Invited History and Future of Deflection Yoke
S. Hattori, J. K. SongMIR E&DS, Korea

As we are fully understood, CRT is one of the most distinguisheddisplay devices ever since made, which highly performs not only inquick responding speed but also high brightness. And there isDeflection Yoke that enables CRT to bring out the best condition to
perform on display.
CRT2 - 2
14:00

Advanced Algorithm for DY/Tube Matching
H. Meershoek
LP Displays, The Netherlands

We describe the design of an advanced real time algorithm for an
automated DY/tube match system, which minimizes screen errors
according to least squares-, minmax- or a mixture-norm. A Robust
Design Study has been performed to find the algorithm parameters thatdeliver a good compromise between picture quality, yield and speed.

110Thursday
CRT2 - 3
14:20

December 6
Development of Compact DY System without Field
Correction CoilY. S. Ling, C. C. Chao, C. H. Lim
Chunghwa Picture Tubes, Malaysia

Since copper is the main material of Deflection Yoke (Abbreviated as
DY) which contribute over 65% of DY cost, a lighten weight and without
Field Correction Coil (Abbreviated as FC Coil) has been developed; thispaper only concentrated on 20V RF TV, in which the elimination of FC
Coil is the most difficult part in DY & CRT design.
----- Break -----

15:10 - 16:20

Small Hall

CRT3: Super Slim CRT
Chair:
Co-Chair:
CRT3 - 1:
15:10

J. Henrichs, LP Displays, The Netherlands
H. Y. Chen, Chunghwa Picture Tubes, Taiwan
Invited From Vision to Reality: the Path to Super Slim
CRTJ. Meijer, J. van der Heijden
LP Displays, The Netherlands

SuperSlim CRT are defined by a much reduced tube length, but without
any deterioration of performance and under strict compatibility witholder CRT. Computer simulation models predicted SuperSlim to be
unfeasible. These problems have been overcome by an integral design
approach, involving multidisciplinary study of the principal design
choices.
CRT3 - 2
15:40

Ultra Short-Length Gun Design for 21-in. Ultra Vixlim
CRT
K. Sung, S. Lee, Y.-H. Jeong, S. Back, M. Bae
Samsung SDI, Korea

We have designed Ultra Short-length Gun (USG), the length isshortened drastically, Result in we could develop 21" Ultra Vixlim (UX)
CRT, allover length is diminished less 300mm. This gun shows good
focus performance and moiré characteristics with high reliability.
CRT3 - 3
16:00

Optimized Methods of Reducing doming for AK
Shadow Mask of 29-in. Super Slim CRT
J. I. Jang, J. E. Choi, J. C. Park
LP Displays, Korea

No abstract was submitted.
----- Break -----

111

Thursday

December 6

16:30 - 18:00

Small Hall

CRT4: CRT Technologies
Chair:
Co-Chair:
CRT4 - 1:
16:30

S. Shirai, Hitachi Displays, Japan
M. Bae, Samsung SDI, Korea
Invited History and Future of CRT Phosphor
Technologies
H. Yamamoto
Tokyo Univ. of Tech., Japan

This talk begins with a review of transition of CRT phosphors in theearly stage. Then it discusses the most important efficiency issue,
particularly on luminance saturation and degradation, in connection with
FEDs or SEDs. A new group of phosphors, nitrides and oxynitrides, will
be described with a hope that new useful cathode-ray phosphors may
be invented after long blank.
CRT4 - 2:
16:55

Invited Development of Advanced Phosphor
Screening Technologies for an Ideal CRT
K. Ohno, T. Kusunoki*
Ohno Advanced Phosphor Consult., Japan*
Sony, JapanPDP and LCD are increasingly edging into the market because of thedisadvantage of CRT-TV regarding weight and depth. However, thepicture qualities of CRT-TV are better excellent than those of PDP and
LCD. This report will explain development of advanced phosphor
screening technology for an ideal CRT.
CRT4 - 3
17:20

A CAE Method for Shadow Mask of CRT
Y. Ye, M. Yu, J. Zhao
IRICO Group Elect., China

The shadow mask is a important part of CRT. The doming, microphonyeffect and drop resistance is the important characteristics of shodowmask. The 3D model which contains nearly all parts of CRT were donewith Pro/Engineer and were transformed to ANSYS. The doming,
microphony effect and drop resistance analysis were done using the
FEM through the ANSYS.

IDRC ’08
November 3-6, 2008
Orlando, FL, U.S.A
112

Thursday
CRT4 - 4
17:40

December 6
Development and Application of Structural Design
Techniques for CRT Embodiment
H. Sakamoto, J. Itoh, S. Takada, M. Miyazaki
Mitsubishi Elec., Japan

This paper summarizes newly developed structural design techniques
which involve accurate simulation techniques, strength characteristics
and structural optimization technique, for CRT design. These
techniques were applied to a highly reliable, light weight 51 cm flat-face
CRT.

Author Interviews
18:10 – 19:10

Supporting Organizations:Technical Group on Information Display, ITE
Technical Committee on Electronic Information Displays, Electronics
Society, IEICE

Fujioka Collection
The world most complete private CRT history
collection, including World first Color CRT,World first Trinitron, Early Camera Tube,
Early Color and Black & White Televisions,will be demonstrated with live picture at Exhibition.
Main Hall C
Sapporo Convention Center

IDW ’08
The 15th International Display Workshops
December 3-5, 2008
Toki Messe
Niigata Convention Center
Niigata, Japan
113

Wednesday

December 5

Workshop on Plasma Displays
Wednesday, December 5
13:20 - 16:20

Main Hall C

Poster PDPp1: Plasma Displays (1)PDPp1 - 1

Development of Electron Emission Simulator forProtective Layer’s Surface of PDP
H. Tsuboi, K. Serizawa, H. Kikuchi, R. Sahnoun,
M. Koyama, H. Hatakeyama, A. Endou, H. Takaba,
M. Kubo, C. A. Del Carpio, H. Kajiyama*, T. Shinoda*,
A. Miyamoto
Tohoku Univ., Japan*Hiroshima Univ., Japan

To investigate the electronic structure and electrical conductivity of MgOprotecting layer, our original tight-binding quantum chemical molecular
dynamics program “Colors” and electrical conductivity evaluation
simulator have been successfully applied. Furthermore we have also
succeeded in the development of an electron emission simulator forprotecting layer of a PDP.
PDPp1 - 2

Development of Electrical Conductivity Simulator for
Metal Oxides Based on Tight-Binding Quantum
Chemistry Theory
Z. Zhu, K. Serizawa, A. Chutia, H. Kikuchi, R. Sahnoun,
M. Koyama, H. Tsuboi, N. Hatakeyama, A. Endou,
H. Takaba, M. Kubo, C. A. Del Carpio, H. Kajiyama*,
T. Shinoda*, A. Miyamoto
Tohoku Univ., Japan*
Hiroshima Univ., Japan

A novel electrical conductivity simulation approach has been developed
and applied to investigate electrical properties of metal oxide. Thisapproach is based on tight-binding quantum chemistry theory andMonte Carlo simulation. Both bulk MgO and SnO2(110) surface were
investigated. Our results were agreement with experimental
observations and provide valuable insight into studying of oxides
conductivity.

114

Wednesday
PDPp1 - 3

December 5
Development of Large-Scale Quantum Chemical
Molecular Dynamics Simulator and Its Application to
PDP Materials
A. Endou, K. Serizawa, K. Ogiya, H. Onuma, T. Onodera,
C. Lv, H. Kikuchi, H. Tsuboi, M. Koyama,
N. Hatakeyama, H. Takaba, M. Kubo, C. A. Del Carpio,
H. Kajiyama*, T. Shinoda*, A. Miyamoto
Tohoku Univ., Japan*
Hiroshima Univ., Japan

We have developed a new tight-binding quantum chemical molecular
dynamics code, ‘New-Colors’, based on tight-binding quantum chemicalmolecular dynamics code, ‘Colors’. We demonstrated that New-Colors
code was successfully accelerated by the comparison of computation
time. This program is expected to be effective in performing large-scalequantum chemical molecular dynamics simulations.
PDPp1 - 4

Surface Potential and Secondary Electron Yield of
MgO Thin Film of 50 nm Thickness under Ion
Irradiation
T. Nagatomi, K. Yoshino*, Y. Morita*, M. Nishitani*,
M. Kitagawa*, Y. Takai
Osaka Univ., Japan*Matsushita Elec. Ind., Japan

The ion-induced secondary electron emission from a 50 nm-thick MgOfilm on a Si substrate was investigated. The energy distributions ofsecondary electrons confirmed that the positive surface potential of theorder of several hundreds V, which depends on only the collector
voltage, significantly decelerates primary ions, and induces the ballistic
electron emission from the substrate through the MgO film.
PDPp1 - 5

Withdrawn

PDPp1 - 6

Measurement of Secondary Electron Emission
Coefficient with External Applied Voltage in AC PDP
C. G. Son, E. Y. Park, S. S. Lee, S. H. Hong, S. J. Jung,
J. H. Kim, Y. J. Hong, S. H. Cho, Y. G. Han, K. B. Song,
M. W. Moon, B. H. Hong, G. S. Cho, E. H. Choi
Kwangwoon Univ., Korea

We measured ion-induced secondary electron emission coefficient in
the 4 inch test panel with external applied difference voltage. In thisresearch, we located 4inch test panel in Gamma-FIB (Focused Ion
Beam) system and inflicted positive bias to the panel and used neon ion
beam which has accelerative voltage between 120V and 200V, andmeasured secondary electron emission coefficient. The γ value is foundto be decreased when the positive voltage is applied to the AC-PDP.

115

Wednesday
PDPp1 - 7

December 5
Secondary Electron Emission Coefficient andDischarge Characteristics with Temperature in AC
PDP
E. Y. Park, C. G. Son, S. H. Hong, S. S. Lee, E. H. Choi
Kwangwoon Univ., Korea

It is noted that the temperature is an important factor which can change
the discharge characteristics in AC-PDP. We measured firing voltage,brightness and IR response time according to the various temperaturesin the AC-PDP. It is found that the secondary electron emission
coefficient (γ) is increased as in creasing the temperatures, which
results in lower breakdown voltages and faster response time for IR
peak intensity during discharges.
PDPp1 - 8

Characteristics of MgO Protective Layer with
Deposition Rate in AC PDP
S. H. Hong, E. Y. Park, C. G. Son, S. J. Jung, S. S. Lee,S. H. Cho, J. H. Kim, Y. J. Hong, Y. G. Han, K. B. Song,
M. W. Moon, G. S. Cho, E. H. Choi
Kwangwoon Univ., Korea

In alternating current plasma display panels (AC-PDPs), the ioninduced secondary electron emission coefficient (γ) has effect on
breakdown voltage. In order to find out optimized deposition condition of
MgO, we have measured the ion-induced secondary electron emission
coefficient with deposition rate of MgO by using Gamma Focused Ion
beam (γ-FIB) system.
PDPp1 - 9

Improvement of Optical Simulation by Using New UV
Source in PDP Cells
C. W. Eom, J. W. Kang
Dankook Univ., Korea

For improving the accuracy of simulated results, new UV source wasdesigned. Previously the optical simulation was performed with thesymmetric planar UV source. To design new UV source, UV distribution
from the plasma fluid code was implanted to the 3-dimensional opticalcode to generate the visible light distribution.

IDW Best Paper Award
This new award will go to the most outstanding
paper selected from those presented at IDW ’07.
The 2007 award winners will be announced on the
IDW web site:
http://www.idw.ne.jp/award.html
116

Wednesday
PDPp1 - 10

December 5
Measurement of Spatiotemporal Distribution of
Excited Xe Atom Density in 1s5 with Various ITOShape in AC PDP
S. H. Cho, P. Y. Oh, J. H. Kim, Y. J. Hong, S. J. Jung,
S. S. Lee, S. H. Hong, C. G. Son, Y. G. Han, K. B. Song,
M. W. Moon, G. C. Kwon, B. H. Hong, G. S. Cho,E. H. Choi
Kwangwoon Univ., Korea

In this study, we have measured the spatiotemporal behavior of theexcited Xe atoms density in the 1s5 metastable states by laser
absorption spectroscopy in accordance with various ITO-shapes. The
maximum density of excited Xe atoms in the 1s5 state in discharge cell
for Fish-bone typed, T typed and Square typed ITO electrodes has beenmeasured to be 3.01 x 1013 cm-3 , 2.66 x 1013 cm-3 and 2.06 x 1013
cm-3, respectively.
PDPp1 - 11

Measurement of Spatiotemporal Behavior of Excited
Xe Atom Density in 1s5 with Gas Pressure in AC PDP
J. H. Kim, S. H. Cho, P. Y. Oh, S. J. Jung, Y. J. Hong,
E. Y. Park, S. S. Lee, S. H. Hong, M. W. Moon,
K. B. Song, C. G. Son, Y. G. Han, B. H. Hong, G. S. Cho,E. H. Choi
Kwangwoon Univ., Korea

We have measured the excited Xe atoms density in the 1s5 metastablestates, and productive efficiency of excited Xe atom per one cell bylaser absorption spectroscopy in accordance with the filling gas
pressures. We have known that the excited Xe atom’s productive
efficiency has been gradually saturated.
PDPp1 - 12

Withdrawn

PDPp1 - 13L

Effect of Secondary Electron Emission by Xe+ on
Firing Voltage in AC-PDPs
M. Kitagaki*,**, K. Uchida*,***, K. Tsutsumi**, G. Uchida*,
H. Kajiyama*, T. Shinoda**
Hiroshima Univ., Japan**Tateho Chems. Ind., Japan***ULVAC, JapanMgO based protective layers with finite secondary electron emission
coefficient by Xe+, γ (Xe), are synthesized and their effect on firing
voltage is measured in AC-PDPs. It is measured that the slight increaseof γ (Xe) by an order of 0.01 reduces the firing voltage and that the
reduction becomes larger at higher Xe content.

117

Wed./Thu.

December 5/6

PDPp1 - 14L

Kinetic Electron Emission from Insulator Surfaces
and its Significance in Plasma Display Panel
J. Y. Chun, J. Y. Moon, T. G. Kwon, J. Lee
Seoul Nat. Univ., Korea

The kinetic emission yield γKE of SrO by Xe+ is large and sensitively
depends on the concentration of O vacancy. When averaged over theenergy distribution of Xe+ in PDP, an effective γKE of ~0.1 was obtained.
This can be a mean to significantly improve the discharge
characteristics of PDP.
PDPp1 - 15L

Release Condition of Wall Electrons in AC-PDP
T. Sakai, K. Tachibana*Display Res. Labs., Japan*Kyoto Univ., Japan

Wall electrons on the dielectric layer of the cathode are released if Es >Ed+Et , where Es : electric field of the discharge space, Ed: electric fieldof dielectric side, Et: electric field of a electron capturing site. Thiscondition is possible if there is a projection part on the layer.

Thursday, December 6
9:00 - 12:00

Main Hall C

Poster PDPp2: Plasma Displays (2)PDPp2 - 1

Analysis of Sustain Wavefrom for Improving
Luminance and Luminous Efficacy in AC PDPs
N. W. Choi, C.-S. Min, S.-H. Yoon, B.-J. Shin*, J. H. Seo
Univ. of Incheon, Korea*Sejong Univ., Korea

By controlling moderately the sustaining pulse width and the timeinterval between successive sustaining pulses, we could manipulate thewall voltage and priming particles. In this paper, two types of a sustain
waveform, positive going pulse and negative going pulse, areinvestigated to analyze their effect on the luminance and luminous
efficacy.

IDW Outstanding
Poster Paper AwardThe 2007 award winners will be announced on the
IDW web site:
http://www.idw.ne.jp/award.html
118

Thursday
PDPp2 - 2

December 6
Proposed Driving Waveform for Improving Address
Discharge Characteristics of AC PDP
S. S. Lee, C. S. Son, Y. J. Hong, E. H. Park, S. H. Hong,
Y. G. Han, J. H. Kim, S. J. Jung, S. H. Cho, M. W. Moon,
K. B. Song, B. H. Hong, E. H. Choi
Kwangwoon Univ., Korea

A new reset driving waveform is proposed to improve an address
discharge time lag in this research under the conventional address
voltages. The new reset waveform can accumulate the more wallcharges between address-scan (A-Y) electrodes than those forconventional waveform. In this experiment, it is found that the formative
time lag and statistical time lags could be reduced by the new reset
waveform.
PDPp2 - 3

A Study on the Address Delay Time with Various
Reset Ramp Waveforms in AC PDP
Z. H. Li, S. J. Hong, S. H. Im, S. J. Kwon
Kyungwon Univ., Korea

In this paper, the address delay time was investigated with various
slopes ramp waveform during a reset period in AC PDP. The results
showed that the address delay time wildly varied with different slopes of
the ramp waveforms. The relationship between priming particles andramp waveforms was also analyzed.
PDPp2 - 4

Studies of New Waveform with Negative Ramp Pulse
and Various Sustain Pulses
S. H. Eom, J. W. Kang, H. I. Park*, S. H. Mun*
Dankook Univ., Korea*
LG Elect., Korea

A new reset waveform with negative ramp pulse was proposed to
improve addressing discharge in alternating current ac PDP. A modified
negative waveform having positive address pulse was discussed. With
the modified negative waveform, the address and sustain discharges
were successfully ignited. A negative and alternating sustain pulses
were also studied with combined with the negative reset pulse.
PDPp2 - 5Compensation of Luminous Efficiency Relative toDisplayed Area in AC PDP
J. K. Lim, B.-T. Choi, H.-S. Tae, H. J. Kim*, M. Hur*,
M. Yoo*, E. G. Heo*
Kyungpook Nat. Univ., Korea*Samsung SDI, Korea

The decrease in the luminous efficiency in the range of 50%-lessdisplayed area is related to the increase of the applied sustain pulse
number under the 50%-less displayed area. As a result, by properly
controlling the rising slope of ERC depending on the displayed area,
especially 50%-less displayed area, the luminous efficiency can be
improved by about 6 - 10% under the 50% less-displayed area.
119Thursday

December 6

PDPp2 - 6

Study on the Discharge Characteristics of AC PDP at
High Temperature
D. H. Kim, W. J. Jeon, T. Y. Song, S.-H. Lee
Inha Univ., Korea

Unstable sustain discharges can occur at the bottom cells of the panel
at high temperature. It seems that the resultant wall charge loss during
address period increased with increase of temperature as well as theaddressing stress pulse voltage. Therefore it results in unstable
discharge during sustain period.
PDPp2 - 7

Ghost Image Analysis of Contrast-Enhancement Filmfor PDPs
T. W. Beom, H. Cui, D. H. Lee, W. J. Jeong*,
K. C. Yoon*,**, S. T. Kim*, J. R. Park
Chosun Univ., Korea*Samsung Fine Chems., Korea**KAIST, Korea

We have performed analysis of the ghost image phenomenon induced
by a contrast-enhancement film (CEF) used for plasma display panels(PDPs). A conventional CEF, composed of a base film and black-stripes
embedded in ultra-violet (UV) resin, is analyzed using an illumination
design tool, LightTools (Optical Research Associates).
PDPp2 - 8

Reduction of Temporal Dark Image Sticking in AC
PDP Using Vacuum Sealing Method
C.-S. Park, H.-S. Tae, Y.-K. Kwon*, E. G. Heo*
Kyungpook Nat. Univ., Korea*
Samsung SDI, Korea

Minimizing the residual impurity gas is the key factor for reducing
temporal dark image stickings. In this paper, the vacuum-sealing
method is adopted to minimize the residual impurity gas by enhancing abase vacuum level, and the resultant change in the temporal dark
image sticking was examined in comparison with that of theconventional sealing method in the 42-in. ac-PDP with a high Xe
content.
PDPp2 - 9

Diagnostics of PDP Micro-Discharge Plasmas Using
Infrared Laser Thomson Scattering System
Y. Sonoda, A. Akune, K. Tomita, S. Hassaballa,
K. Uchino, K. Ishii*, Y. Hirano*, Y. Murakami*
Kyushu Univ., Japan*NHK, Japan

In order to avoid laser perturbations for Xe containing discharges, thelaser Thomson scattering (LTS) system having an infrared laser at awavelength of 1064 nm as a light source has been developed. The
basic behavior of electrons in the Ne/Xe discharges was investigated byusing the infrared LTS system.
120

Thursday

December 6

PDPp2 - 10

Direct Observation of Vacuum Ultraviolet Emission in
AC PDP
G. Uchida, H. Kajiyama, T. Shinoda
Hiroshima Univ., Japan

Here is presented direct observation of vacuum ultraviolet radiationfrom alternating-current plasma display (AC-PDP). Measurementshows that high ultraviolet-radiation efficiency is attained especially forhigh Xe contents. The change of electron energy is also analyzed fromemission spectra. There is considerable effect of Xe contents onelectron energy. Our experiment shows that electron energy directly
affects the ultraviolet-radiation efficiency.
PDPp2 - 11

Measurements of Surface Charge and Voltage in a
Discharge Cell with 100-µm Gap Coplanar Structure
Using Electro-Optic Crystal
K. Ishii, Y. Murakami, Y. Hirano, S. Kubota*, T. Sakurai*,
H. Yoda**NHK, Japan*Univ. of Yamanashi, Japan**Tokyo Electron AT, JapanThe surface voltages on the dielectric barrier in a 100-µm gap discharge
cell of coplanar structure were measured using an electro-optic crystal
for various gas mixture conditions. The surface voltage increased withthe amount of xenon gas at low total gas pressures. However, for highgas pressures, the estimated wall voltages gradually decreased forxenon gas contents exceeding 20%.
PDPp2 - 12

Direct Patterning of Indium Tin Oxide Layer in PDP
Using Nd:YVO4 Laser
K. H. Kim, M. H. Ahn, S. J. Kwon
Kyungwon Univ., Korea

Maskless laser direct patterning ITO films was experimented using a Qswitched Nd:YVO4 laser (λ=1064 nm) for the fabrication of plasma
display panel (PDP) bus electrodes. The laser ablated ITO patterns
showed the formation of shoulders at the edge of the ITO lines and theripple-like structure with the etched bottom compared with thechemically wet etched ITO patterns. We changed pulse repetition rateand examined damage degree of PDP glass.

121

Thursday
PDPp2 - 13

December 6
Synthesis of Low Temperature Burnable P(MMABMA) Binder and Control of Carbon Residue during
Baking Process of BAM Phosphor Paste
S. W. Kim, S. Lee*, W. B. Im, J.-S. Lee, H. S. Jang,
H. S. Yoo, D. Y. Jeon
KAIST, Korea*
Samsung SDI, Korea

In order to reduce thermal degradation of PDP BAM phosphor(BaMgAl10O17:Eu2+), it is desirable to develop low temperatureburnable binder instead of using the commercial cellulose type binder,
which need high temperature baking process. Therefore, we
synthesized and adopted P(MMA-co-BMA) binder for PDPs
applications.
PDPp2 - 14L

Influence of Wall Charge on Image Sticking
Phenomena in AC PDP
M. J. Jeon, M. S. Chung, B. K. Kang
Pohang Univ. of S&T, Korea

This paper investigates the cause of the image sticking phenomenon in
AC PDP and proposes an efficient way to reduce the phenomenon.
Experimental results indicate that image sticking is caused mainly by
the wall charges accumulated on the sustain electrodes. A few facedischarges equate the wall voltages on the sustain electrodes and set
all cells of the PDP at the same external voltage for firing a surface
discharge.
PDPp2 - 15L

An Algorithm to Compensate for the Load Effect of
AC PDP
G. H. Hur, S. H. Kim, J. H. Kim, B. K. Kang
Pohang Univ. of S&T, Korea

This paper proposes an algorithm to compensate for the load effect of
PDP, which causes a decrease of luminance with an increase of thenumber of ON pixels. The proposed algorithm modifies the gray level
and changes the number of sustain pulses for each subfield. The
luminance errors due to the load effect were reduced by ~70% after
compensation.
PDPp2 - 16L

Characteristics of Fence-type Aluminum Electrodevia Anodic Bonding with Soda Lime Glass Substrate
M.-Y. LEE, W.-Y. Choi, Y.-S. Kim
Hong-ik Univ., Korea

A fence-type aluminum electrode on soda lime glass substrate wasformed via anodic bonding followed by patterning with chemical etching.
The electrode pattern was anodized to form the dielectric layer on its
surface. Test panels were prepared using the front plate with theelectrode pattern and their luminance and discharge characteristics
were examined. The results demonstrated a possibility of usingaluminum electrode for ac-PDP.
122

Thursday

December 6

PDPp2 - 17L

Effect of Auxiliary Pulse on Address for Overlapped
Scan Method in AC PDP
O. K. Kwon, T. G. Kim, B. H. Lim, D. H. Cho, K. H. Kim,
J. S. Oh, S. G. Yang, D. H. Lee
Kyungpook Nat. Univ., Korea

Now AC-PDPS are widely used for large size TV displays. In order toimprove the address method, the overlapped scan waveform has been
proposed recently. In this paper, a new overlapped scan waveform with
an auxiliary pulse is presented. The proposed waveform allows morestable addressing than conventional overlapped scan waveform.
13:30 - 14:50

Mid-sized Hall A

PDP1: Protective Layer (1)Chair:
Co-Chair:
PDP1 - 1:
13:30

H. Tolner, Southeast Univ. , China
H. Kajiyama, Hiroshima Univ., Japan
Invited Perspective for Near Future Technology andIndustry on PDPs
R. Murai, M. Kitagawa
Matsushita Elec. Ind., Japan

In recent years, PDPs growth rate has been slower than LCDs. Thisoccurred when LCD TV makers introduced large size, 1080p and bright
LCDs to the world market. PDP makers have developed and advanced
the technology to overcome these items. In this paper, we will discuss
this in detail.
PDP1 - 2
13:50

Effect of Surface Contamination on Destruction andRecrystallization Dynamics of MgO Protecting Layer
in PDP by Molecular Dynamics Simulation Method
M. Kubo, K. Serizawa, H. Kikuchi, R. Sahnoun,
M. Koyama, H. Tsuboi, N. Hatakeyama, A. Endou,
H. Takaba, C. A. Del Carpio, H. Kajiyama*, T. Shinoda*,
A. Miyamoto
Tohoku Univ., Japan*Hiroshima Univ., Japan

Our original molecular dynamics code was applied to the destruction
and recrystallization dynamics of MgO protecting layer in PDP by Xe
sputtering. We elucidated that adsorbed water molecules are
dissociated and hydrogen atoms are intruded into the MgO surface.
These phenomena were suggested to degrade its second electron
emission ability.

123Thursday
PDP1 - 3
14:10

December 6
Reconstruction Characteristics of MgO (111)
Textured Protective Layer by Over-Frequency
Accelerated Discharge in AC PDP
S. K. Kwon, J. H. Kim, S. K. Moon, H. H. Kim, K. H. Park,
Y.-J. Cho, S.-T. Kim, K.-R. Lee
LG Elect., Korea

The reconstruction characteristics of MgO (111) textured protective
layer in AC-PDP were investigated by over-frequency accelerated
discharge and these were correlated to the variations of electronic
structures. The reconstruction and exaggerated grain growth (EGG)
were explained by defect-assisted 2-D nucleation and growth ofcharged clusters during discharge under electric field in AC-PDP.
PDP1 - 4
14:30

Electron Emission Characteristics of Hydrogen
Doped 12CaO·7Al2O3 Electride for PDP
S. Webster, M. Ono, S. Ito, H. Kajiyama*, T. Shinoda*,
H. Hosono**
Asahi Glass, Japan*
Hiroshima Univ., Japan**Tokyo Inst. of Tech., Japan

Secondary electron emission by Xe+ was observed for H--containing
12CaO·7Al2O3 electride after an ultraviolet light irradiation to form midgap states through photo-dissociations of H- ions (H- → H0 + e-). The γ
was found to be ~0.1 and was not seriously decreased after a heattreatment in air.
----- Break -----

15:10 - 16:40

Mid-sized Hall A

PDP2: Protective Layer (2)Chair:
Co-Chair:G. Oversluizen, Philips Res. Labs., The Netherlands
M. Uchidoi, Pioneer, Japan

PDP2 - 1
15:10

Proposal of Auger Ion Spectroscopy for Direct
Observation of Midgap States of MgO
H. Kajiyama*, M. Kitagaki*,**, K. Tsutsumi*,**, G. Uchida*,
T. Shinoda**
Hiroshima Univ., Japan**
Tateho Chems. Ind., Japan

Photoemissions induced by Auger reaction between incident inert ionsand MgO surface are measured. It is shown that the midgap states suchas F-type centers could be observed.

124

Thursday
PDP2 - 2
15:30

December 6High Performance MgO Thin Film for PDP with High
Rate Sputtering Deposition Process
M. Terauchi, J. Hashimoto, H. Nishitani, Y. Fukui,
M. Okafuji, H. Yamashita, H. Hayata, T. Okuma,
H. Yamanishi, M. Nishitani, M. Kitagawa
Matsushita Elec. Ind., Japan

A high rate sputtering deposition process of MgO thin film wasdeveloped. The deposition rate of MgO thin film attained was about 300
nm/min. The MgO film deposited in this work has a larger density thanElectron Beam deposition and shows good discharge characteristics
including firing voltage and discharge formation.
PDP2 - 3
15:50

Discharge Probability Model for Analyzing Formative
Delay Time and Electron Emission Properties of MgO
in PDPs
S. Ho, N. Uemura, S. Nobuki, T. Miyake, K. Suzuki,
Y. Mikami, M. Shiiki, M. Uehara*
Hitachi, Japan*Hitachi ULSI Syss., JapanA new discharge probability model is proposed to analyze average andstandard deviation of formative delay time, and the emission time
constant of a priming electron from MgO. The activation energy andeffective number of electron emission source are determined to beabout 729 meV and 4.17×105 per cell, respectively.
PDP2 - 4L
16:10

Wall Charge Holding Characteristics of Doped MgOThin Film for AC PDP
S. H. Yoon, H. S. Yang
Hong-ik Univ., Korea

Wall voltage holding characteristics of doped MgO were evaluatedusing VT close curve measurement. The results revealed that theholding characteristics are poor with the doped film. The causes of suchpoor characteristics were examined using FTIR measurements. The
results indicated that shallow defects levels formed by doping may be
responsible for such poor wall voltage holding characteristics.
PDP2 - 5L
16:25

Discharge Characteristics of a Color PDP with SrCaO
Protective Layer
Y. Motoyama, M. Seki, K. Ishii, Y. Hirano, Y. Murakami
NHK, Japan

We have reproduced video content on a PDP with an SrCaO protective
layer. The sustain pulse voltage was lower than that needed with the
MgO protective layer. The discharge current was also lower than whenusing an MgO protective layer, and 1.9 times higher luminous efficiency
could be obtained. The luminance of the two panels was almost thesame.
----- Break ----125

Thursday

December 6

16:50 - 18:10

Mid-sized Hall A

PDP3: Cell Technology
Chair:
Co-Chair:

L. S. Park, Kyungpook Nat. Univ., Korea
Y. Murakami, NHK, Japan

PDP3 - 1
16:50

Effect of Groove Structures for Front Dielectric Layer
on High Xe Content PDPs
T. Yamada, T. Togashi, T. Akiyama, Y. Noguchi,
K. Shinohe, M. Kitagawa, T. Shinoda
Advanced PDP Development Ctr., Japan

This study describes the groove structures of a dielectric layer in highXe PDPs. We found that the voltages of the groove structures weremuch lower than that of the flat without reducing the luminous efficacy.
Additionally, the groove shape has influences on the luminous efficacy.
PDP3 - 2
17:10

Novel Fabrication Method of Barrier-Ribs for PDP by
UV-Assisted Roll Embossing Process
S. M. Ryu, D. J. Kim*, D. Y. Yang, L. S. Park*
KAIST, Korea*Kyungpook Nat. Univ., Korea

Rapid fabrication technology of barrier-ribs based on a UV-assisted rollforming process is proposed. UV curable paste is coated on the soft
mold by a paste supplier, continuously pressed against a roller with asoft mold, and cured with UV irradiation, resulting in fine barrier ribs aswell as a uniform dielectric layer for a PDP.
PDP3 - 3
17:30

Effects of Plasma Loss on Luminous Efficacy in FullHD AC PDP
H. S. Bae, K.-W. Whang
Seoul Nat. Univ., Korea

We investigated the effect of cell resolution on the luminous efficacy
through 3D numerical simulation. The increase of electrode gap, theadoption of SDE type with 4:3 aspect ratio, and the optimization of
barrier rib height show the high luminous efficacy of Full HD, due to the
reduced plasma loss.

126

Thu./Fri.

December 6/7

PDP3 - 4
17:50

Self-Assembled Electrode of Microcavity Plasma
Arrays: Discharge Properties of Large Scale Array
and Device Fabrication by Wet Chemical Processing
S.-J. Park, K. S. Kim, A. J. Price, T. L. Kim, J. G. Eden,
K. D. Kang*, W. J. Yi*
Univ. of Illinois, USA*
Samsung SDI, Korea

Self-assembled, linearly interconnected microcavity plasma electrodes
have been fabricated by wet chemical processes. Dielectric
encapsulated aluminum microcavity electrodes having emissive cavities
with a diameter of 50-200 µm are formed and fabricated to yield large
scale arrays. This presentation reports device structures and cell
designs for high pressure Xe microplasmas.

Author Interviews
18:10 – 19:10

Friday, December 7
15:10 - 16:30

Main Hall A

PDP4: Driving Technology
Chair:
Co-Chair:L. F. Weber, Consult., USA
T. Shinoda, Shinoda Plasma/Hiroshima Univ., Japan

PDP4 - 1
15:10

Use of Self-Erase Discharges for High-Speed, LowVoltage Addressing of PDPs
M. Shimura, T. Yamaguchi, T. Shiga, S. Mikoshiba
Univ. of Electro-Commun., Japan

A self-erase-discharge addressing is employed to drive a PDP which
operates in an address-while-display, contiguous subfield, erase
addressing scheme. With abundant priming charges created by the
self-erase discharges a stable control of address discharges can beaccomplished, resulting in low voltage (30V) and high speed (0.66µs)
addressing of a Ne+Xe (10%) PDP.

127

Friday
PDP4 - 2
15:30

December 7
Observation of Wall Charge Leakage during Address
Period under Variable Panel Temperature
S.-K. Jang, H.-S. Tae, E.-Y. Jung*, J.-C. Ahn*, J.-H. Oh*,
E.-G. Heo*, B.-H. Lee*
Kyungpook Nat. Univ., Korea*
Samsung SDI, Korea

To explain the address discharge fail at a high temperature, the wallcharge leakage phenomenon during an address-period wasinvestigated relative to the number of applied address and sustain
pulses under variable panel temperatures based on the Vt closedcurve analysis. The wall charge leakages were increased with anincrease in the number of the applied address and sustain pulse, andthis tendency are intensified as the panel temperature increased.
PDP4 - 3
15:50

Cost Effective Multi-Level Single Sustaining Driverwith Dual Energy Recovery Paths for AC PDP
S.-W. Choi, K.-H. Yi, G.-W. Moon
KAIST, Korea

Conventional single sustaining driver suffers from heat problem causedby large conduction loss of sustain switches. But, since proposed driver
lowers the voltage stress of sustain switches by series-connectedconfiguration of switches and floating capacitor, it uses half voltage
rating of sustain switches and reduces the conduction loss of switches.
PDP4 - 4
16:10

Digital Power Amplifier for Generating Reset andScan Driving Waveforms of AC PDP
S.-W. Choi, W.-J. Lee, G.-W. Moon
KAIST, Korea

Since conventional driving circuit has multiple voltage sources andpower switches to generate reset and scan driving waveforms, it hascomplex structure and high cost. However, the proposed digital power
amplifier is operated by only one voltage source and has fewer devices.
Thus, its size and cost is greatly reduced.
----- Break -----

16:50 - 18:10

Main Hall A

PDP5: PDP TV
Chair:
Co-Chair:

128

K.-W. Whang, Seoul Nat. Univ., Korea
R. Murai, Matsushita Elec. Ind., Japan

Friday
PDP5 - 1
16:50

December 7
Development of New 42-in. WXGA Resolution
SMPDP
Y. M. Tang*,**, X. Zhang*,**, B. P. Wang*,**, Q. Y. Lin**,
L. F. Zhu***
Southeast Univ., China**Nanjing Huaxian High Tech., China

To meet the requirements of Chinese HDTV standard and complete
SMPDP product design, a SMPDP with WXGA resolution wasdeveloped. The panel output has been carefully designed to fit the greatdata electrode number and to be compatible for Dual/Single Scan
mode. Driver system was re-designed with low cost solution.
PDP5 - 2
17:10

Measurement of Critical Flicker Frequency at
Extremely Low Luminance Levels and Flicker-Less
20Hz Reset Drive of PDPs
S. Sakai, T. Shiga, S. Mikoshiba
Univ. of Electro-Commun., Japan

Critical flicker frequency (CFF) was measured under luminance as low
as 0.002cd/m2. Together with the measurements of a ramp reset pulse
frequency vs. background emission, it was found that the reset
frequency could be reduced to 20Hz without flickering of the
background luminance. The background luminance then could be
reduced to 0.036cd/m2 with a dark room contrast of 35,000:1.
PDP5 - 3
17:30

World’s First 42-in.1080p HD PDP
H. Tachibana, K. Ogawa, T. Nakajima, T. Nakagawa,
M. Fujitani, K. Sumida
Matsushita Elec. Ind., Japan

We have developed a new fine width rib material and process
technology that can increase the aperture ratio. A new fine pitch cellstabilized driving technology also has been developed to suppress
cross-talk. This has enabled us to introduce to the market the World’sFirst 42-inch 1080p HD PDP.

EXHIBITION
13:00–17:00
9:00–17:00
9:00–14:00

Wednesday, Dec. 5
Thursday, Dec. 6
Friday, Dec. 7

Main Hall C
Sapporo Convention CenterFree admission with your registration name tag.
129

Friday

December 7

PDP5 - 4:
17:50

Invited Technology for High Quality Image
M. Uchidoi
Pioneer, Japan

The image quality of PDPs is largely improved by recent progress of
PDP technology. Further improvements especially on high resolution,high contrast and smooth gradation are required. High speed
discharging is the key technology improving them. CEL technology is
the optimum one for the reason that it’s high speed discharging
characteristic is stable along the long term driving of PDPs.

Author Interviews
18:10 – 19:10

Sponsor:Plasma Display Technical Meeting

Fujioka Collection
The world most complete private CRT history
collection, including World first Color CRT,World first Trinitron, Early Camera Tube,
Early Color and Black & White Televisions,will be demonstrated with live picture at Exhibition.
Main Hall C
Sapporo Convention Center

IDW ’08
The 15th International Display Workshops
December 3-5, 2008
Toki Messe
Niigata Convention Center
Niigata, Japan
130

Thursday

December 6

Workshop on
EL Displays and Phosphors
Thursday, December 6
9:00 - 12:00

Main Hall C

Poster PHp: Phosphors
PHp - 1

Color Conversion Hybrid Devices Composed ofOrganic Fluorescent Films Excited by Inorganic
Electroluminescent Panels
T. Uchida, S. Kawamura, M. Kobayashi, T. Tamura,
Y. Masakura, T. SatohTokyo Polytech. Univ., Japan

We fabricated hybrid color conversion devices (Hyb-CCM) composed oforganic fluorescence films exited by inorganic electroluminescence(IOEL) panels, and also fabricated organic dye dispersed IOEL panels.
Hyb-CCM and organic dye dispersed IOEL method is useful not only for
OLEDs but also for IOEL systems for high luminance and color
adjustment.
PHp - 2White Powder Electroluminescent Device with
ZnS:Cu,Cl and Tb3Al5O12:Ce3+ Phosphors Using
Layered Structure
B. J. Park*,**, H. S. Jang*, H. S. Seo**, J. T. Ahn**,
W. J. Chung***, D. Y. Jeon**
KAIST, Korea**ETRI, Korea***
Kongju Nat. Univ., Korea

White light was generated by ACPEL device with ZnS:Cu,Cl and
TAG:Ce phosphors using layered structure. Maximum luminance was
96 cd/m2 and its CRI was 72. CaS:Eu was screen-printed additionally
between TAG:Ce layer and ITO glass to improve CRI. Maximum CRI
was 89 and its luminance was 78.5 cd/m2.
PHp - 3

Improvement in Electroluminescent Characteristics
of Ba2ZnS3:Mn Devices by Employing Y2O3 Cap
Layer for Annealing
T. Ohashi, T. Sasaki, T. Kotani, M. Nitta, K. Ohmi
Tottori Univ., Japan

Improvement in both luminance and red color purity of Ba2ZnS3:Mn thinfilm electroluminescent (TFEL) devices has been achieved by
combining the deposition temperature of 400°C and the postdeposition-annealing with a Y2O3 cap layer. The improved Ba2ZnS3:Mn
TFEL device shows a red luminescence with the CIE color coordinatesof (x, y) = (0.62, 0.38). The luminance and efficiency at 1 kHz are 320
cd/m2 and 0.12 lm/W, respectively.
131

Thursday
PHp - 4

December 6
Local Structures around Ba2+ and Eu2+ Ions in Blue
Luminescent BaAl2S4:Eu Thin-Films
S. Okamoto, T. Honma*, K. Tanaka, R. Guo**, N. Miura**NHK, Japan*Japan Synchrotron Radiation Res. Inst., Japan**
Meiji Univ., Japan

Local structures around Ba2+ and Eu2+ ions in bright blue luminescent
BaAl2S4:Eu thin films have been analyzed by X-ray absorption finestructure measurement. Thin films were prepared by two methods:
multi-source deposition using molecular beam epitaxy system andelectron beam deposition with post-annealing.
PHp - 5Fabrication of Bendable Inorganic Thin-Film
Electroluminescent Devices
T. Miyata, H. Fukada, S. Matsui, T. Minami
Kanazawa Inst. of Tech., JapanNew bendable see-through inorganic thin-film electroluminescent(TFEL) devices were fabricated on transparent bendable glass sheetswith a thickness of approximately 100µm. High-luminance andbendable see-through TFEL lamps are demonstrated. Stable operation
at high temperatures up to 250°C was obtained in such TFEL lamps
fabricated using Zn2Si1-xGexO4:Mn oxide phosphors.
PHp - 6

Blue-Emitting Ba3MgSi2O8:Eu Phosphors for ThinFilm EL Devices
H. Fukada, S. Matsui, T. Miyata, T. Minami
Kanazawa Inst. of Tech., Japan

Blue-emitting Ba3MgSi2O8:Eu phosphor thin films were newly
developedbyinvestigating((Ba2SiO4)1-X-(Mg2SiO4)X):Eu
multicomponent oxide thin-film phosphors using combinatorial r.f.
magnetron sputtering deposition. Blue PL emission peaking at around435 nm was observed from Ba3MgSi2O8:Eu thin films postannealed at
a high temperature in an Ar+H2(5%) atmosphere. A Ba3MgSi2O8:Eu
TFEL device exhibited blue-green EL emission corresponding to CIE
chromaticity coordinates of (x=0.24, y=0.29).
PHp - 7

Bi-Activated Phosphors Using Various Oxide HostMaterials for Thin-Film EL Devices
H. Fukada, S. Matsui, T. Miyata, T. Minami
Kanazawa Inst. of Tech., Japan

Blue-emitting oxide phosphors for thin-film electroluminescent (TFEL)
devices were newly developed using various Bi-activatedmulticomponent oxides. Blue photoluminescence and EL emissions
were observed from Bi-activated oxide phosphor thin films preparedusing host materials such as LaInO3 and ((LaGaO3)0.49(CaGa2O4)0.51). A good color purity in blue EL, corresponding to theCIE color coordinates of (x=0.15, y=0.09), was obtained in LaInO3:Bi
TFEL devices.
132

Thursday
PHp - 8December 6
Optimising YAG:Ce Phosphors as Colour Converters
of Blue-Emitting LEDs for the Production of White
Light
R. Withnall, J. Silver, T. Ireland, A. Lipman, G. Fern,
E. Barrett
Brunel Univ., UK

It is found that the luminous efficiency of YAG:Ce under 470 nm
excitation increases up to a firing temperature of 1500°C, then drops
appreciably on going to 1650°C. This is accompanied by a red shift of
the wavelength maximum in the emission spectrum and an increase in
the absorbance in the blue region of the spectrum.
PHp - 9Preparation of Strontium Zinc Aluminate Phosphorsand Their Luminescence Properties under LongWavelength UV Illumination
H.-K. Jung, M. S. Yang, S. Choi
Korea Res. Inst. of Chem. Tech., Korea

The (Sr,Zn)0.9Al2O4:0.1Eu2+ as a green phosphor for white emission
using UV-LED was synthesized. The blue shift conducted during a
reducing process could effectively prevent by the addition of excess Zn
source. The optimized green phosphor exhibited 125% in emission
intensity for the YAG:Ce phosphor.
PHp - 10Synthesis and Luminescent Properties of Submicron
SrGa2S4:Eu for LED Application by Solvothermal
MethodH. S. Do, E. J. Kim, S.-H. Hong
Seoul Nat. Univ., Korea

This study is focused on submicron-sized SrS:Eu by solvothermal todecrease particle size of SrGa2S4:Eu. The powders were synthesized
at the various heating schedules. The phases were characterized by
XRD. Morphologies were obtained by FE-SEM. PL of obtained
SrGa2S4:Eu were measured by spectrometer and compared withsample by solid-state reaction.
PHp - 11Synthesis and Photoluminescence Properties of
BaGa2S4:Eu2+ Phosphor for White Light-Emitting
DiodesH. S. Yoo, B. J. Park, W. B. Im, J. S. Lee, D. Y. Jeon
KAIST, Korea

Ba1-xEuxGa2S4 phosphor was prepared for white LEDs application. The
main emission wavelength was increased from 501 nm to 530 nm withincrease of the Eu2+ concentration from 0.05 to 0.5 mol. In addition, theexcitation band was broadened and enlarged to the longer wavelength,
which result in increase of the PL intensity under blue excitation.

133

Thursday
PHp - 12

December 6
Luminescence Property of Eu2+-Doped KBaPO4
Phosphor under Ultraviolet and Vacuum Ultraviolet
Excitation
W. B. Im, H. S. Yoo, V. Sivakumar, K. H. Kwon,
H. J. Park, Y.-I. Kim*, D. Y. Jeon
KAIST, Korea*
Korea Res. Inst. of Standards & Sci., Korea

An intense blue-emitting phosphor KBaPO4:Eu2+ was synthesized.
Under 147, 254, and 365 nm excitation, it showed an intense emission,corresponding to a relative intensity of 60, 122, and 108 % of acommercial BaMgAl10O17:Eu2+ phosphor (Nichia). This is a very
promising candidate phosphor for PDP, CCFL, and white LEDs.
PHp - 13

F-Codoped BaGd4Si3O13:Tb Green Phosphor for
VUV Excitation
A. Kobayashi, T. Kunimoto*, A. Yamane, Y. Nakashima,
K. OhmiTottori Univ., Japan*
Tokushima Bunri Univ., Japan

We have developed F-codoped BaGd4Si3O13:Tb phosphors preparedat low temperature and investigated their luminescent characteristics. It
is concluded that F-incorporation for BaGd4Si3O13:Tb phosphorsprovides drastic increase of PLE intensity in VUV region.
PHp - 14

Temperature Dependency of Host Emission fromBaMgAl10O17 and Its Relationship with Geometrical
Structure
H. Onuma, H. Tanno*, R. Sahnoun, M. Koyama,
H. Tsuboi, N. Hatakeyama, A. Endou, H. Takaba,
M. Kubo, C. A. Del Carpio, H. Kajiyama*, T. Shinoda*,
A. Miyamoto
Tohoku Univ., Japan*Hiroshima Univ., Japan

We have investigated the host-emission from BaMgAl10O17 and
SrMgAl10O17 experimentally and theoretically. Experiments showedthat the intensities of their host-emission decrease by rising thetemperature. Calculation results suggested that their temperaturedependency can be attributed to the increase of the thermal vibrationsof Ba and Sr atoms.

134Thursday
PHp - 15

December 6
B2O3 (B2O3-xF2x, Al2O3-B2O3) Nano-Sized Coatings
on BaMgAl10O17:Eu2+ Phosphor
K. T. Jung, S. K. Evstropiev, K. Y. Lee, H. B. Yoon,
Y. W. Choi, K. D. Lee, D. H. Lee, S. M. Ban, H. S. Ha,
K. S. Lee
Samsung Corning, Korea

New nano-sized B2O3 (B2O3-xF2x; Al2O3-B2O3) coatings on
BaMgAl10O17:Eu2+ phosphor have been developed. The coatings were
deposited on phosphor surface from ethanol solutions of inorganic
compounds with following thermal treatment. The measurements of theluminance at both UV (254 nm) and VUV (174 nm) excitation showed
high effectiveness of these coatings. Developed nano-sized coatings
fully cover phosphor surface and carefully protect BAM phosphor corefrom thermal degradation, providing high luminance of coatedphosphor.
PHp - 16

Synthesis of ZnMgO Powder and ZnMgO Coating on
ZnO by Sol-Gel Method
N. Koketsu, T. Sano, H. Kominami, Y. Nakanishi, K. Hara
Shizuoka Univ., Japan

Synthesis of ZnMgO and surface treatment of ZnO by ZnMgO thin layer
by sol-gel method were studied. The exciton emission of ZnMgO were
shifted to higher energy according to increase of Mg contents.
Moreover, PL intensity of exciton emission from ZnO was improved by
ZnMgO coating because of suppression of carrier diffusion at surface or
improvement of surface crystallinity.
PHp - 17Synthesis of GaN:Zn Phosphors by the Two-Stage
Vapor-Phase Method Using ZnO as a Zn Source
T. Mori, H. Komoda, H. Kominami, Y. Nakanishi, K. Hara
Shizuoka Univ., Japan

GaN:Zn powders have been synthesized by the two-stage vapor phasemethod. The sample showed blue photoluminescence characteristic to
the Zn center in GaN. The most intense emission was observed at alower supply rate for the reaction temperature of 1000 °C than 1050 °C.
The peak of the emission band shifted towards longer wavelength withincreasing the supply rate.
PHp - 18

Photoluminescence Characteristics of Y3Al5O12:Tb3+
Phosphors Synthesized with Different Tb
Concentration
H.-H. Kwak, S.-J. Kim, S.-J. Park, H.-H. Yoon, H.-W. Choi
Kyungwon Univ., Korea

For this study, terbium-doped yttrium aluminum garnet (YAG:Tb)
phosphor powders were prepared via the combustion process using the
1:1 ratio of metal ions to reagents. The characteristics of thesynthesized nano powder were investigated by means of X-ray
diffraction (XRD), photoluminescence (PL), scanning electron
microscope(SEM) at various Tb concentration.
135

Thursday
PHp - 19

December 6
Luminescent Characteristics and Its Enhancement of
Pr3+-Doped BaTiO3 Phosphor
S. Y. Kang, S. D. Ahn, K. S. Suh, D. J. Lee*, D. W. Ihm*,
J. B. Kim*, S. G. Kang*
ETRI, Korea*
Hoseo Univ., Korea

We have investigated Pr3+-doped BaTiO3 phosphor with various Pr
concentrations and the effect of the co-dopant Ga. The phosphor has
the maximum luminescent intensity of Pr at 0.01mol%, which is therelatively low concentration. The incorporation of Ga 1.0 mole%
resulted in remarkable enhancement of the luminescence of thephosphor.
PHp - 20

Luminescent Properties of LiF-Doped Y2O3:Eu3+
Thin-Film Phosphors by RF-Magnetron Sputtering
TechniqueH. K. Park, K.-Y. Ko, Y. R. Do
Kookmin Univ., Korea

We have proposed the rf-magnetron sputtering technique utilizing a codeposition process of utilizing both an additional LiF disk and a
Y2O3:Eu3+ target. Y2O3:Eu3+ films annealed above 900°C were cubic
structures. But, both as-deposited and post-annealed Li-doped
Y2O3:Eu3+ films were cubic phase. An improved PL intensity of
Y2O3:Eu3+ films were obtained by a doping of LiF (fluxing effect).
PHp - 21White Light Emission from Two-Phosphor Systems
for the Application to a Carbon Nanotube Field
Emission Backlight Unit
H. S. Jang, J. H. Kang*, D. Y. Jeon
KAIST, Korea*
Samsung Elect., Korea

Although Tb3Al5O12:Ce3+ (TAG:Ce) and Sr3SiO5:Eu2+ (SS:Eu) showed
weak yellow emission under electron irradiation respectively, both
TAG:Ce and SS:Eu mixed with ZnS:Ag,Cl showed stronger yellow
emission ascribed to secondary blue light excitation. Bright white light
was generated from the blend of ZnS:Ag,Cl and yellow phosphors(TAG:Ce or SS:Eu) under electron irradiation.

136

Thursday
PHp - 22

December 6
Phase Formation and Luminescence of Zinc Silicate
Phosphor Synthesized in Supercritical Water
M. Takesue*,**, K. Shimoyama**, A. Suino***, K. Shibuki*,
Y. Hakuta***, H. Hayashi***, Y. Ohishi****, R. L. Smith Jr.**
Tohoku Univ., Japan**Bando Chem. Inds., Japan***
Nat. Inst. of Advanced Ind. S&T, Japan****Japan Synchrotron Radiation Res. Inst., Japan

Phase formation and luminescence of Mn-doped zinc silicate (ZSM)
synthesized in supercritical water was studied. Two shapes of α-ZSM
particles were formed finally. Needle-like shape particles formed
through homogenous nucleation in supercritical water, while irregularshape particles formed by phase transition with passing through anintermediate β-ZSM via a solid diffusion.
PHp - 23L

Optical Properties of the BaMgAl10O17:Eu2+
Phosphor Coated with ZnO for a Plasma Display
Panel
J. H. Seo, S. M. Lee, S. H. Sohn
Kyungpook Nat. Univ., Korea

The surface of BaMgAl10O17:Eu2+ phosphor was coated with ZnOnanoparticles with a simple surface treatment way. It was found that thesurface coating of phosphors with ZnO leads to a decrease inluminance intensity, due to the shielding effect. However, according as
stirring time increases, PL-intensity tends to increase. These increasing
intensities do not exceed the PL-intensity of the noncoated phosphor.
PHp - 24L

Highly Efficient Phosphor-Embedded Quartz
Substrate Grown by Vaporization-Diffusion Processof Metal Oxides
J. H. Park, H. J. Pyo, Y. T. Jeong, J. T. Kim, J. S. Kim
Pukyong Nat. Univ., Korea

Highly efficient Zn2SiO4:Mn2+ phosphor film is embedded into quartz
substrate through a thermal vaporization-diffusion process of metaloxides (ZnO, and MnO) in a vacuum tube. The thickness of thephosphor film is controlled by the annealing time and temperature. The
phosphor film shows a high extraction efficiency and chemical stability
in comparison with a conventional powder phosphor.
PHp - 25L

Development of Ultrafine Y2O3:Eu3+ Nanophosphor
for Inkjet Printing
S. J. Hong, J. I. Han
Korea Elect. Tech. Inst., Korea

In this work, ultrafine Y2O3:Eu3+ nanophosphor with ultrafine size of 8
nm and cubic crystal structure was developed for inkjet printing. Also,
20 wt% Y2O3:Eu3+ ink was well formulated. By applying thenanophosphor ink to inkjet printing, nanophosphor thin film was wellprinted with good photoluminescence properties.
137

Thursday
PHp - 26L

December 6
Synthesis and Photoluminescent Properties of
La2O2S:Eu by Citric Acid Gel Method
S. Yamashita, H. Kominami, Y. Nakanishi, K. Hara,
Y. Shimomura*, M. Yoshino*
Shizuoka Univ., Japan*Mitsubishi Chem., Japan

La2O2S:Eu is known as a red phosphor, and it is suggested that it
shows good luminescence in the NUV excitation. In this study, synthesisof La2O2S:Eu using the citric-acid-gel method has been studied. As theresult, for single phase preparation, it is necessary to control andoptimize the amount of sulfide flux.
PHp - 27L

Effect of Micron-Sized Circle Array Patterns on the
Improvement of YVO4:Eu3+ Thin Film Phosphors
J. Y. Han, J. H. Kang, H. S. Jang, H. S. Yoo, D. Y. Jeon
KAIST, Korea

The optical properties of YVO4:Eu3+ thin film phosphors were improvedby introducing micron-sized circle array patterned SiO2 layer between
substrate and phosphor. We investigated the reasons for enhancementof PL intensity to determine the factors affecting the optical properties of
YVO4:Eu3+ thin film phosphor deposited on the patterned substrates.
PHp - 28L

Synthesis of ZnAl2O4:Mn Phosphors by the Citric
Acid Gel Method
T. Nagura, H. Kominami, Y. Nakanishi, K. Hara
Shizuoka Univ., Japan

We investigated synthesis parameters of citric acid gel method, whichlead to the improvement in brightness of ZnAl2O4:Mn phosphors. It was
found that not only Zn/Al molar ratio of the source but also drying time ofprecursor had significant effects on crystal formation and luminescent
properties of the synthesized phosphors.

138Thursday

December 6

13:30 - 14:50

Mid-sized Hall B

PH1: Phosphors for FEDs, LEDs & Lighting
Chair:
Co-Chair:PH1 - 1:
13:30

R. Withnall, Brunel Univ., UK
T. Miyata, Kanazawa Inst. of Tech., Japan
Invited Blue-Emitting AlN:Eu2+ Phosphors for Field
Emission Displays
R.-J. Xie, N. Hirosaki, K. Inoue, T. Sekiguchi, B. Dierre,
K. Tamura*Nat. Inst. for Materials Sci., Japan*Futaba, Japan

Here we report on a novel blue-emitting AlN:Eu2+ powder phosphor
which was synthesized by the solid state reaction. This phosphor emitsa strong blue color at an accelerating voltage of 3 kV, and exhibits highbrightness, low saturation, long lifetime, enabling it to use in fieldemission displays.
PH1 - 2:
14:00

Invited Advances in Sulfide Phosphors for Displays
and Lighting
D. Poelman, J. E. Van Haecke, P. F. Smet
Ghent Univ., Belgium

Currently, there is a great interest in phosphors for LED wavelength
conversion. Oxide phosphors cannot yield the broad band red emission
needed for illuminants with good colour rendering. In Eu-doped sulfides,
red emission can easily be obtained. This overview focuses on twoclasses of phosphors: Ca(1-x)Sr(x)S:Eu microcrystals and thiosilicate
powders.
PH1 - 3
14:30

Synthesis and Characterization of New Green
Phosphor for White LED
K. Uheda, S. Shimooka, M. Mikami, H. Imura, N. Kijima
Mitsubishi Chem. Group S&T Res. Ctr., JapanA new host material doped with rare-earth element, (Ba,Eu)3Si6O12N2,
was synthesized under a reducing atmosphere. The crystal structure of
the host lattice was determined by a new protocol combining XRD
analysis with first-principles calculation. The compound exhibits
potential as an efficient green phosphor with high color purity for whiteLED.
----- Break -----

139

Thursday

December 6

15:10 - 16:30

Mid-sized Hall B

PH2: Phosphors for EL
Chair:
Co-Chair:PH2 - 1:
15:10

D. Poelman, Ghent Univ., Belgium
S. Okamoto, NHK, Japan
Invited A 34-in. Flat-Panel TV Fabricated by
Combining Inorganic EL and Color Conversion
Technologies
H. Hamada, I. Yoshida, D. Carkner*, X. Wu*,
M. Kutsukake**, K. Oda**
Sanyo Elec., Japan*iFire Tech., Canada**
Dai Nippon Printing, JapanA 34 inch inorganic EL panel for HD-TV with a simple structure has
been successfully developed by combining the color-conversion
materials and BaAl2S4:Eu blue-phosphor. The panels, which were
fabricated using these technologies, were shown a peak luminance of400cd/m2 over, wider color gamut of 95% over, and wide-viewing angle.
PH2 - 2:
15:40

Invited Novel Flexible EL Powder Displays
J. Silver, R. Withnall, G. Fern, P. Marsh, T. Ireland,
P. Harris
Brunel Univ., UK

The macrostructures of very flexible ACEL displays panel layers arepresented and compared to those of conventional EL display panels.
The very flexible layers are made up of a single binder layer that not
only carries the electroluminescent phosphor particles that can be up to
30 µm or more in size, but also carries the ferroelectric nanometer size
particles.
PH2 - 3
16:10

Surface, Structural and Luminescent Properties of
ZnS Phosphors
M. M. Sychov, V. V. Bakhmetiev, V. G. Korsakov
St. Petersburg State Inst. of Tech., Russia

Model of acid-basic centers on ZnS phosphors surface is developed. In
pKa 2…5 range centers represent CuXS-H; pKa-5…0 represent sulfur
atoms located near to vacancies of zinc; pKa 12…15 represent OHgroups connected to zinc atoms near sulfur vacancies. Surface
characteristics have good correlation with phosphors’ electroopticalproperties.

Author Interviews
18:10 – 19:10

140

Friday

December 7
Friday, December 7

9:00 - 10:10

Mid-sized Hall B

PH3: Synthesis & Theory of Phosphors
Chair:
Co-Chair:PH3 - 1:
9:00

R.-J.Xie, NIMS, Japan
N. Matsuda, Toshiba, Japan
Invited Low Temperature Wet Chemical Synthesis of
Nanophosphors in the Presence of Coordinating
Molecules
T. Isobe
Keio Univ., Japan

We report low temperature wet chemical synthesis of nanophosphors of
LiEuW2O8 and YVO4:Bi3+,Eu3+ in the presence of coordinating
molecules, 1,4-butylene glycol and citrate, respectively. The role of PO4
units on the formation of sheelite-type structure is discussed in
LiEuW2O8. The aging effects of colloidal solution are discussed in
YVO4:Bi3+,Eu3+.
PH3 - 2
9:30

Electroluminescent Device Utilizing ChemicallySynthesized ZnS:Mn Nanocrystals: Weak Thermal
Quenching of Luminance
D. Adachi, T. Hama, D. Yamaguchi, T. Toyama,
H. Okamoto
Osaka Univ., Japan

We present EL properties of chemically synthesized ZnS:Mn
nanocrystals (NCs) with a crystallite size of 4 nm utilizing EL devices
with a structure of glass/ITO/Si3N4/ZnS:Mn NC/Al. Orange EL due toMn2+ 3d-3d transitions was observed at the electric field > 3 MV/cm.
Thermal quenching of luminance was not observed until approximately
400 K.
PH3 - 3
9:50

New Inorganic Phosphor Synthetic Method byMicrowave Thermo-Catalysis
N. Taguchi, T. Matsumura-Inoue*, M. Fujii**, Y. Uraoka**
Image Tech, Japan*Minerva Light Lab., Japan**Nara Inst. of S&T, JapanA new synthetic method for inorganic phosphors by a microwave
thermo-catalysis has been developed. II-VI group compound
semiconductors such as ZnS were used as mother materials forphosphors. It was found that the raw materials have changed into
phosphors, and the crystal structure has also changed.
----- Break -----

141

Friday

December 7

10:40 - 12:10

Mid-sized Hall B

PH4: Phosphors for PDPs
Chair:
Co-Chair:PH4 - 1:
10:40

J. Silver, Brunel Univ., UK
K. Ohmi, Tottori Univ., Japan
Invited Theoretical Investigation on Electronic
Structure of Phosphors Using the DV-Xα and DVME
Methods
H. Yoshida*,**, K. Ogasawara***
NEC Lighting, Japan**Kwansei Gakuin Univ., Japan

We introduce the electronic structures of host crystals used forphosphors and rare-earth-doped phosphors using the computational
programs of the relativistic discrete-variational Xα (DV-Xα) and discretevariational multi-electron (DVME) method. They are one of the powerfultools for the study of the optical properties of conventional and novel
phosphors.
PH4 - 2
11:10

Defect Levels in BaMgAl10O17 and SrMgAl10O17 Theoretical and Experimental Approach
H. Onuma, H. Tanno*, R. Sahnoun, M. Koyama,
H. Tsuboi, N. Hatakeyama, A. Endou, H. Takaba,
M. Kubo, C. A. Del Carpio, H. Kajiyama*, T. Shinoda*,
A. Miyamoto
Tohoku Univ., Japan*Hiroshima Univ., Japan

We have studied defect levels in BaMgAl10O17 and SrMgAl10O17 bothexperimentally and theoretically. Shallow and deep traps in
BaMgAl10O17 and shallow traps in SrMgAl10O17 were found by thermoluminescence measurements. Calculations showed similar defect levels
in both materials. The absence of the deep trap in SrMgAl10O17 is
attributed to large thermal-quenching.
PH4 - 3
11:30

Plasma Treatment of RGB Phosphors for PDP
Application
H. Tanno*,**, T. Fukasawa***, G. Uchida*, S. Zhang*,**,
T. Shinoda*, H. Kajiyama**Hiroshima Univ., Japan**Dyden, Japan***
Adtec plasma Tech., JapanThe suppression of plasma degradation of RGB phosphors is tried
using hydrogen plasma treatment. It is shown that BAM:Eu2+(B)and
Zn2SiO4:Mn2+ (G) gets higher resistance against for Ne+Xe plasma
irradiation, while the lifetime of (Y, Gd)BO3:Eu3+ (R) is unchanged byhydrogen plasma treatment.

142

FridayPH4 - 4
11:50

December 7
New Explanation for Luminance Saturation
T. Kurai, Y.-K. Kim, S.-R. Lee, S.-Y. Lee
Samsung SDI, Korea

We introduced Nonradiative Transition as new explanation of
Luminance Saturation for PDP and formulated simulation equation of
Saturation. Although parameter was fixed by end point of BAM:Mn,remained data points and other phosphors’ cases also showed good
agreement.

Author Interviews
18:10 – 19:10

Sponsors:
The 125th Research Committee on Mutual Conversion between Lightand Electricity, JSPS
Phosphor Research Society, The Electrochemical Society of Japan

EXHIBITION
13:00–17:00
9:00–17:00
9:00–14:00

Wednesday, Dec. 5
Thursday, Dec. 6
Friday, Dec. 7

Main Hall C
Sapporo Convention CenterFree admission with your registration name tag.
143

Friday

December 7

Workshop on Field Emission Display
Friday, December 7
9:00 - 9:10

Small Hall

Opening
Opening Remarks
9:00
M. Takai, Osaka Univ., Japan
9:10 - 10:20

Small Hall

FED1: FEDs & Novel Devices
Chair:
Co-Chair:
FED1 - 1:
9:10

H. Mimura, Shizuoka Univ., JapanY. Iguchi, FE Techs., Japan
Invited High-Luminance CNT-FED for Color
Character-Displays
J. Yotani, S. Uemura, T. Nagasako, H. Kurachi,
T. Maesoba, T. Nakao, M. Ito, A. Sakurai, H. Shimoda,
T. Ezaki, Y. Saito*
NORITAKE, Japan*Nagoya Univ., Japan

A high-luminance CNT-FED character-display using practical ribstructure was performed. The display-panel had 48x480-dots and the
sub-pixel pitch was 1mm. The 2mm-tall-ribs as spacer were formed byusing innovative production processes. In this work, we present a
compact package device for the application of multiple-device-display
board.
FED1 - 2
9:40

Study of Optimal Design Simulation for Diode Type
CNT-FED
C.-C. Kuo, Y.-Z. Chen, C.-C. Kao, J.-S. Fang, K. Cheng,
D. Yeh*, C.-Y. Hsiao*, T.-F. Chan*
TECO Elec. & Machinery, Taiwan*TECO Nanotech, Taiwan

FEM is used to simulate the diode type CNT-FED for design
improvements. Fining emitter patterns can improve the electron
emission efficiency. Moreover, there is an optimal condition forbalancing uniformity and performance according to gap variation. The
diode type 32x32 pixels 8.9" panel as an information indicator isdesigned accordingly.

144

Friday
FED1 - 3
10:00

December 7
Low Voltage and High Speed Operation of 640x480
Pixel Active-Matrix HEED (High-Efficiency Electron
Emission Device) Array for HARP Image Sensor
Y. Okuda, T. Satoh, Y. Matsuba, R. Tanaka, T. Nakada,
K. Sakemura, N. Negishi, A. Watanabe, T. Yoshikawa,
K. Ogasawara, M. Nanba*, S. Okazaki*, K. Tanioka*,
N. Egami*, A. Kobayashi**, N. Koshida***Pioneer, Japan*NHK, Japan**
Hamamatsu Photonics, Japan***Tokyo Univ. of A&T, JapanAn advanced active-matrix HEED has been developed for an ultrahighly sensitive compact HARP image sensor. The HEED has 640×480
pixels, and the pixel size is 20×20µm. The HEED with pixel-drivers andscanning driver circuits were fabricated as an image pickup beamsource for the HARP target. The prototyped device operates well as ahigh-sensitivity VGA image sensor.
----- Break -----

10:40 - 12:30

Small Hall

FED2: CNT Emitters for FEDs (1)Chair:
Co-Chair:M. Sasaki, Univ. of Tsukuba, JapanJ. Yotani, NORITAKE, Japan

FED2 - 1
10:40

Field Emission from Metal-Deposited CNTs:
Emission Stability Improvement and Atomic Imagesof Metal Clusters
Y. Saito, T. Matsukawa, T. Yamashita, K. Asaka,
H. Nakahara, S. Uemura*
Nagoya Univ., Japan*NORITAKE, Japan

Field emission from carbon nanotubes deposited by aluminum and goldwith mean thicknesses from 1 to 11nm were studied. Aluminum
significantly suppressed emission fluctuation, and even gold reduced
the fluctuation in a limited mean thickness. Atomic images of an Al
cluster were revealed by field emission microscopy.

145

Friday
FED2 - 2
11:00

December 7
The Variation of RAMAN Spectra in CNT Cathodes
Treated by Plasma and Laser
W. S. Kim, H. Oki, A. Kinoshita, K. Murakami, S. Abo,
F. Wakaya, M. Takai
Osaka Univ., JapanThe relationship between field emission characteristics and defects
measured by Raman scattering was investigated for CNT cathodes
treated by plasma and laser. The ID/IG increased after both treatments,
improving the field emission characteristics. This result indicates thatdangling bonds in CNTs play an important role in the field emission
intensity.
FED2 - 3
11:20

Field Emission Profiles of CNT Cathodes with
Surface Treatment Using KrF Eximer Laser or
Adhesive Tape
A. Kinoshita, W. S. Kim, K. Murakami, S. Abo, F. Wakaya,
M. Takai
Osaka Univ., Japan

CNT cathodes were treated by KrF (248 nm) excimer laser irradiationand pulse aging with a high electric field of 8.8 V/µm. The uniformities ofemission patterns in CNT cathodes before and after pulse aging with ahigh electric field were evaluated by the distribution of emission current
density measured by a field emission profiler.
FED2 - 4
11:40

CNT Field Emission Cathodes for Micro FEDs
A. Prudnikava, J. Shaman, B. Shulitski, V. Labunov,
A. Smirnov, A. Navitski*, G. Müller*
Belarusian State Univ. of Informatics & Radioelect.,
Belarus*Bergische Univ., Germany

Field emission cathodes (FECs) on the basis of carbon nanotube arrays
synthesized by the atmospheric thermal CVD method on the top of SiO2
surface with Ti interdigital electrodes have been developed. The
geometrical parameters, structure and emission properties of FECs
have been investigated. FECs demonstrated low onset electric fields
and moderate uniformity of emission.
FED2 - 5L
12:00

Electron-Beam-Pumped Ultraviolet Light Sources
Using Graphite Nanoneedle Field Emitters
H. Mimura, K. Shiozawa, Y. Neo, M. Okada,
G. Hashiguchi
Shizuoka Univ., Japan

We have fabricated a sputter-induced graphite nanoneedle field emitterand a Si .electron-transparent film for application to an electron-beampumped vacuum ultraviolet light source. Vacuum ultraviolet lightemission from Xe gas was successfully demonstrated in the electronbeam-pumped light source.

146

Friday
FED2 - 6L
12:10

December 7
A Study on Inverse Dynamics for High Performance
Driving 20 inch Carbon Nanotube Backlight Units
S.-Y. Chung*, C.-C. Liang, C.-N. Huang, C.-M. Lai*,
C.-T. Pan*
ITRI, Taiwan*
Nat. Tsing Hua Univ., Taiwan

For high performance driving carbon nanotube backlight units (CNTBLUs), the RC-delay-like relationship between the applied gate-cathodevoltage and the induced light from anode should be coped with. This
paper studies the dynamics and inverse dynamics of the relationships.
High performance inverse dynamics driving schemes can then be
developed. The inverse dynamics are experimentally evaluated andsatisfactory results are obtained.
FED2 - 7L
12:20

Development of Highly Bright Field Emission Lamp
for Dynamic Back Light Unit in LCD
J.-W. Jeong, D.-J. Kim, J.-T. Kang, J.-S. Kim, Y.-H. SongETRI, Korea

Field emission lamp for a BLU was developed by using the printed CNTemitters with the metal-TMG. Local dimming was achieved by a novel
driving method. The fabricated FEL showed a very high luminance over
12,000 cd/m2 with an anode voltage of 15kV. We, also, expect goodefficiency and reliability.
----- Lunch -----

13:30 - 14:50

Small Hall

FED3: CNT Emitters for FEDs (2)Chair:
Co-Chair:N. Nakane, Muroran Inst. of Tech., Japan
S. Uemura, NORITAKE, Japan

FED3 - 1
13:30

Nano-Welding of Freestanding CNT on Metal
Electrode and Its Field Emission Properties
K. Asaka, H. Nakahara, Y. Saito
Nagoya Univ., Japan

Multi-walled carbon nanotubes (MWNTs) were manipulated inside atransmission electron microscope combined with functions of scanningtunneling microscopy, and fabricated into a single freestanding MWNTemitter on a platinum electrode surface. The electron field emission
properties of the single freestanding MWNT were in-situ measured
simultaneously with the observation of structural dynamics.

147

Friday
FED3 - 2
13:50

December 7
Simulation Study of Bundle CNT Emitter Arrays for
Field Emission Devices
H. Furuta, M. Furuta, S. Honda*, M. Katayama*,
K. Oura*, T. Hirao
Kochi Univ. of Tech., Japan*
Osaka Univ., JapanThe emission properties of the pillar-shaped CNT bundle emitter arrays
were simulated using finite element method. The decrease of thresholdvoltage for emission was caused by the field enhancement on the pillarshape edge. The optimum spacing to the height ratio for the emission of
the emitter arrays was two.
FED3 - 3
14:10

Fabrication of Triode CNT-FEA Lamp on Glass
Substrate with RAP Process
K. W. Min, J. H. Ryu, I. O. Jeong, C. S. Lee, K. S. Kim,
S. Manivannan, J. Jang, K. C. Park
Kyung Hee Univ., Korea

We developed a novel growth method of CNTs on glass substrate fordevice applications. With resist-assisted patterning (RAP) method, we
had grown CNTs on glass substrate, which were strongly bonded withglass substrate. The electron emission current showed a current density
14µA/cm2 at 7 V/µm field.
FED3 - 4
14:30

Enhanced Electron Emission Poroperties of CNT by
Post Growth Treatment
K. S. Kim, J. H. Ryu, C. S. Lee, S. Manivannan,
J. H. Moon, J. S. Ahn, J. Jang, K. C. Park
Kyung Hee Univ., Korea

We studied the effect of post treatment on field emission from carbon
nanotubes field emitter arrays (CNT-FEAs) selectively patterned by theresist-assisted process. Three kinds of post treatment processing forenhanced electron emission properties namely electrical aging, thermal
annealing and HF wetting on CNT-FEAs were performed. The fieldemission property was remarkably improved by the post treatments.
----- Break -----

15:10 - 16:30

Small Hall

FED4: FE Materials & Structures
Chair:
Co-Chair:

148

F. Wakaya, Osaka Univ., Japan
N. Egami, NHK, Japan

Friday
FED4 - 1
15:10

December 7
Potential Surface-Conduction Electron Emission
from ZnO Thin Film
S. L. Wu, J. T. Zhang, C. L. Wang, H. B. Sun, W. B. Hu,
Y. L. Sun, C. L. Liu
Xi’an Jiaotong Univ., China

In this paper, we propose to deposit ZnO film with sputter and form
surface-conduction electron emitters with the electro-forming process.
The emission characteristics and luminescence of ZnO film are
obtained experimentally. The results show that Zn can be a potential
SED cathode material instead of Pd for FPD application.
FED4 - 2
15:30

Fabrication of Vertical Thin Film FEA Using IonInduced Bending Technique
T. Yoshida, C. Yasumuro, M. Nagao, S. Kanemaru,
A. Baba*, T. Asano**
AIST, Japan*
Kyushu Inst. of Tech., Japan**Kyushu Univ., Japan

We propose a vertical thin film (VTF) formed by ion-induced bending
technique to realize a FED. The bending technique can form micrometer sized high-aspect ratio emitting tip from 100-nm-thick thin film by
ion irradiation without thick film deposition. We fabricated gated VTF
emitter and confirmed electron emission from sharpened tip.
FED4 - 3
15:50

Properties of Insulating Layer of Gated FEAs withTransition Metal Nitride CathodeY. Gotoh, Y. Miyata, N. Setojima, H. Tsuji, J. Ishikawa
Kyoto Univ., Japan

Properties of the insulating layer of gated FEA with transition metal
nitride cathodes were investigated. As an insulating layer, we adopted
SiO2 thin film. The current-voltage characteristics of the TaN- and HfNFEAs were investigated. The insulating properties were largely
reduced. Some characteristics of the insulating layer will be reported.
FED4 - 4
16:10

Emission Properties of Nanocrystalline Silicon
Planar Cathodes
H. Shimawaki, Y. Neo*, H. Mimura*, K. Murakami**,F. Wakaya**, M. Takai**
Hachinohe Inst. of Tech., Japan*Shizuoka Univ., Japan**Osaka Univ., Japan

A planar cathode based on nanocrystalline Si covered with a thin oxide
film deposited by using a pulsed laser ablation technique was fabricatedand the emission properties were investigated. Emission stability anddivergence were improved by controlling the thickness ofnanocrystalline silicon layer and metal film for extraction electrode.
----- Break ----149

Friday

December 7

16:50 - 17:10

Small Hall

FED5: FE Materials & Devices
Chair:
Co-Chair:Y. Gotoh, Kyoto Univ., Japan
H. Shimawaki, Hachinohe Inst. of Tech., Japan

FED5 - 1
16:50

Work Function Measurement of Zr-O/Mo(100) by
Using of Photoemission Electron Microscope
H. Kawahara, Y. Nakano, H. Nakane, H. Adachi
Muroran Inst. of Tech., JapanWe are investigating the thermal field emission cathode of highbrightness for electron beam systems such as an electron microscope.
The work function of ZrO/Mo(100) has been successfully estimated byuse of the photoelectron emission microscope (PEEM) to be 2.5 eV with
Fowler plot. Further investigation is necessary.

Author Interviews
18:10 – 19:10

Sponsor:158th Committee on Vacuum Nanoelectronics, JSPSIDW Best Paper Award
This new award will go to the most outstanding
paper selected from those presented at IDW ’07.
The 2007 award winners will be announced on the
IDW web site:
http://www.idw.ne.jp/award.html

IDRC ’08
November 3-6, 2008
Orlando, FL, U.S.A
150

Wednesday

December 5

Workshop on Organic LED Displays
Wednesday, December 5
13:20 - 14:30

Mid-sized Hall A

OLED1: Display
Chair:
Co-Chair:K. Matsuo, Sony, Japan
R. Hattori, Kyushu Univ., Japan

OLED1 - 1: Invited Views on the Promise of AM-OLED Displays
13:20
for Mobile Through TV Use
M. Kobayashi, T. Uemura, M. Ohta, J. Hanari, T. Ishida,
N. Kamiura, S. Okutani, N. Ibaraki
Toshiba Matsushita Display Tech., Japan
We have developed three prototypes of small-sized AM-OLED using
small molecule evaporation technology, and 20.8-inch AM-OLED using
ink jet printing technology which is the largest polymer-based display.
The advantages and issues were discussed for these two technologies.
A newly developed outcoupling structure was applied to a 20.8-inch
WXGA display.
OLED1 - 2
13:50

15.0-in. XGA AMOLED Display with Advanced SPC
TFT Based Back-Plane Structure
H. K. Lee, S. H. Jung, T. J. Ahn, J. S. Yoo, C. Y. Kim,
C. D. Kim, I. B. Kang
LG.Philips LCD, Korea

A 15.0 inch full color XGA AMOLED display has been developed. In
addition to good luminance uniformity by an Advanced Solid Phase
Crystallization (a-SPC) method and a novel compensating pixel circuit,picture quality and device characteristics were improved by using
double gate insulator and optimized process structure.
OLED1 - 3
14:10

Organic Light Emitting Diode Luminous
Compensation System with Optical Sensor
Composed of Low Temperature Poly Silicon
H. Shirouzu, K. Masumoto, N. Matsuo, T. Hamano,
S. Yamamoto, Y. Ejima, T. Mitsuse, K. Suyama,
T. Nakamura, K. SakanouePanasonic Commun., JapanWe demonstrated the luminous compensation system for organic lightemitting diodes (OLEDs). The system is composed of the poly-silicon(p-Si) sensor fabricated in the p-Si TFT backplane. The luminous
uniformity of this system achieved less than ±1% deviation. We applied
this system to the print-head for electro-photography.
----- Break -----

151

Wednesday

December 5

14:50 - 16:20

Mid-sized Hall A

OLED2: Process
Chair:
Co-Chair:Y. Tsubata, Sumation, Japan
Y. Sato, JST, Japan

OLED2 - 1: Invited LIPS (Laser-Induced Pattern-Wise
14:50
Sublimation) Technology for Manufacturing LargeSized OLED Displays
K. Matsuo, K. Hanawa, T. Hirano, T. Sasaoka, T. Urabe
Sony, Japan
We have developed a novel laser transfer technology for full-color OLED
displays. OLED materials are transferred from glass donors to a
substrate by laser-induced patternwise sublimation (LIPS). LIPS has
several advantages such as stable transfer quality and scalability tolarge-sized mother glass. Using this technology, we fabricated 27.3-inch
OLED display.
OLED2 - 2
15:20

Patterning of OLED Materials with Laser Induced
Thermal Imaging
W. A. Tolbert, S. Lamansky, M. B. Wolk
3M, USAWe have developed a high resolution patterning method for OLED
materials -Laser Induced Thermal Imaging (LITI). The process iscompatible with high throughput OLED manufacture on large format
display glass. OLED devices fabricated using LITI technology haveattained a level of performance that is acceptable for commercial
applications.
OLED2 - 3
15:40

Ink Jet Printable Phosphorescent Organic LightEmitting Devices
T. Sonoyama, M. Ito, R. Ishii, S. Seki, S. Miyashita,
S. Xia*, J. Brooks*, R. C. Kwong*, M. Inbasekaran*,
J. J. Brown*
Seiko Epson, Japan*Universal Display, USA

We discuss a novel method for the fabrication of ink jet printed organic
light-emitting devices. Unlike previously reported solution processed
OLEDs, the emissive layer of the OLEDs reported here doesn’t contain
polymeric materials. We show the latest spin-coated phosphorescent
RGB-OLEDs performances. And we demonstrate the emission of the
ink-jetted Red-P2OLED.

152

Wednesday
OLED2 - 4
16:00

December 5
Reliable OLED Device Covered with Film
Encapsulation
A. Kidokoro, K. Kitamura, N. Koide, Y. Kato
Toyota Ind., JapanWe demonstrate OLED device covered with film encapsulation andinvestigate a relationship between saturated vapour pressure andformation of point degradation/defects, called DS: Dark Spot(s) on the
OLED. The reliability in the severe testing condition of 85°C/85%RH
storage is over 1,000 hrs.
----- Break -----

16:30 - 18:00

Mid-sized Hall A

OLED3: Material
Chair:
Co-Chair:

M. Kobayashi, Toshiba Mastushita Display Tech.,Japan
A. Mikami, Kanazawa Inst. of Tech.,Japan

OLED3 - 1: Invited Recent Progress on Polymer LED Materials
16:30
Y. Tsubata
Sumation, Japan
Efficiency, lifetime, and color of Light emitting polymers have been
improved by new classes of emitters as well as new backbone.
Combination of emitters and backbones leads to stabilities not only ofemission but also of charge injection/transporting. The performance of
new materials and degradation mechanism are discussed.
OLED3 - 2
17:00

PIN OLEDs - Enhanced Voltage Stability for AM
Display Applications S. Rentenberger, J. Birnstock, M. Burghart, T. Canzler,
G. He, P. Wellmann, A. Werner, O. Zeika, S. Murano
Novaled, Germany

For the growing market of active-matrix OLED displays, apart from long
lifetimes and high efficiencies, a stable operating voltage and better
temperature stability gain in importance. We show that highly efficient
PIN technology combined with newest materials already meet theserequirements.

153

Wed./Thu.
OLED3 - 3
17:20

December 5/6
Device Characteristics of OLED with Benzodifuran
Derivatives as Hole-Transporting Layer
Y. Sato*, C. Mitsui**, H. Tsuji**, E. Nakamura*,***JST, Japan**
Univ. of Tokyo, Japan

Novel hole transport materials are developed based on benzodifuran(BDF) unit. BDF without aromatic amine group is found to function as
HTL of OLED device. Introducing aromatic amine groups into BDF
structure, further improvement of hole mobility is achieved. EL
characteristics of BDF derivatives exhibit higher efficiency than α-NPD.
OLED3 - 4
17:40

Electrode Materials for Low Electron/Hole Injection
Barrier Formation in OLED
H. Hosono*,**, K. Kim*,**, H. Yanagi*, T. Kamiya*,**,
H. Hiramatsu**, M. Hirano*,***Tokyo Inst. of Tech., Japan**
ERATO-SORST, JST, Japan

Electron-doped 12CaO・7Al2O3 (C12A7:e-) with the work function of
2.4eV was applied to the cathode of OLED to reduce the electroninjection barrier height. The value for Alq3/C12A7:e- was reduced to ~1/
2 of that of Alq3/LiF/Al. The inverted OLED (C12A7:e-/Alq3/NPB/ITO)
fabricated exhibited excellent performances among the same structured
devices reported.

Author Interviews
18:00 – 19:00

Thursday, December 6
9:00 - 10:30

Main Hall A

AMD4/OLED4: Organic TFT & OLED
Chair:
Co-Chair:J. Jang, Kyung Hee Univ., Korea
Y. Fujisaki, NHK, Japan

Invited A Flexible, Full-Color and Top-Emission AMAMD4/
OLED4 - 1: OLED Display Driven by OTFTs
9:00
I. Yagi, N. Hirai, Y. Miyamoto, M. Noda, A. Imaoka,
R. Yasuda, N. Yoneya, K. Nomoto, J. Kasahara,
A. Yumoto, T. Urabe
Sony, Japan
We have demonstrated a flexible, full-color and top-emission AM-OLED
display driven by an organic TFT backplane. Organic insulators,
including a newly-developed gate insulator, are utilized for all the
insulating layers of the backplane, which remarkably enhance bothmechanical flexibility and specifications of the display.

154Thursday

December 6

AMD4/
Invited Active Matrix Drive of Flexible Sheet Displays
OLED4 - 2: Using MIS-Type Organic Light-Emitting Transistors
9:25
K. Kudo, K. Nakamura*, T. Hata*, A. Yoshizawa*
Chiba Univ., Japan*
Pioneer, Japan
We have developed novel metal-insulator-semiconductor-type organic
light-emitting transistors (MIS-OLETs), and have improved thecharacteristics of the MIS-OLETs by optimizing the device structure. In
addition, we have demonstrated an active matrix display using these
MIS-OLETs fabricated on a plastic substrate.
AMD4/
OLED4 - 3
9:50

High-Resolution AM-OLED Display with Top-Emitting
Smart White and Overall Unified Brightness (OUB)
Technology
D.-Z. Peng, H.-L. Hsu, S.-C. Wang, P.-K. Su,
R. Nishizawa
TPO Displays, Taiwan

A 2-inch QVGA (200 PPI) full-color AM-OLED display with top emission
technology has been developed by WOLED with color filters. To improvethe uniformity of the brightness, an Overall Unified Brightness (OUB)
approach has been applied. With these technologies, a high-resolution
AM-OLED display with better front-of-screen performance for mobile
applications could be achieved.
AMD4/
OLED4 - 4
10:10

New Fast Threshold Voltage Detecting Pixel Schemefor High Resolution and Large Area AMOLED Display
H.-S. Shin, W.-K. Lee, S.-G. Park, T.-J. Ha, M.-K. Han
Seoul Nat. Univ., Korea

We propose a new polycrystalline silicon pixel scheme, which detects athreshold voltage rapidly by clock signal, for active matrix organic lightemitting diode displays. We have fabricated the pixel circuit on the glass
substrate and verified that the proposed pixel circuit could successfullycompensate the threshold voltages variation.
----- Break -----

155

Thursday

December 6

13:30 - 16:30

Main Hall C

Poster OLEDp: OLED Poster
OLEDp - 1

Improvement of OLED Performance by Using Alkali
Metals as Electron Injection Layer Evaporated from
Highly Stable Source
A. Bonucci, J. Mio Bertolo, M. Riva, C. Carretti,
S. Tominetti, S. H. Kim*, J. Y. Lee**
SAES Getters, Italy*Seoul Nat. Univ., Korea**
DanKook Univ., Korea

One of the key issues for Organic Light Emitting Diodes (OLEDs) is toachieve high power efficiency (ηE), that can be improved by using an
Electron Injection Layer of Alkali metal. A comparison of EIL based on
Li and Cs layers, with respect to the LiF has been carried out.
OLEDp - 2

Flexible Organic Light-Emitting Diodes with a CoSputtered Platinum-Indium Tin Oxide AnodeC. M. Hsu, J. Y. Huang, W. T. Wu
Southern Taiwan Univ., Taiwan

Platinum (Pt) doped indium tin oxide (ITO) anodes were fabricated to
study their effects on OLED devices. Devices with a 2 nm Pt-doped ITO
anode reduced threshold and turn-on voltages by 20.9% and 10.5%,
respectively. O2 plasma on ITO anode minimized surface contaminants
and largely lowered the device operating voltages.
OLEDp - 3

White Organic Light Emitting Devices with High
Color Stability by Using Thin Codoped Layer
C. H. Hsiao, C. F. Lin, J. H. Lee
Nat. Taiwan Univ., Taiwan

The thin codoped layer with red and sky-blue emission in the WOLED
eliminates carrier-trapping effect and reduces driving voltage by 2.3V
from recombination current enhancement. The commercial fluorescent
WOLED exhibited 243 cd/m2 at 4.5V and 8.2 cd/A (5.71 lm/W). CIE
coordinates variation from 243 to 14000 cd/m2 is (-0.009, -0.001).
OLEDp - 4

Laser Thermal Printing Device Using Passive Beam
Shaping Optics
I. Park, J. H. Kwon, J. Yi
Yeungnam Univ., Korea

A laser thermal printing device was developed. The laser beam was
focused on an organic material coated donor plate and the beam profile
was transformed to square shape by an acousto-optic modulator for
clean patterning. To replace expensive acousto-optic modulator, hollow
fiber beam shaping optics was devised.

156

Thursday
OLEDp - 5

December 6
Fabrication of Thin Film from Benzene Monomer
Using Plasma Polymerization and Application to
Organic LED
S. Tanaka, R. Koyama, S. Yoshikado
Doshisha Univ., Japan

Polymerized thin films used for organic light emitting devices were
fabricated from a benzene monomer by plasma polymerization. Thinfilms without pinholes were deposited. The thickness of the film was
proportional to discharge time. The aromatic structure of the film
remained at a small discharge current. Operating voltage, at whichelectroluminescence was observed, was directly proportional to film
thickness.
OLEDp - 6

Solution Processed White OLEDs Based on Orange
Phosphorescent Dye Doping to Spiropolyfluorine
Blue Polymer
J. J. Park, T. J. Park, W. S. Jeon, S. Y. Kim, Y. K. Lee,J. Jang, J. H. Kwon
Kyung Hee Univ., Korea

A series of white polymer light-emitting devices has been fabricated byusing a spiropolyfluorine (SF) blue polymer with an orange Ir complex.
A good color coordination of (0.34, 0.36) with a good current efficiencyof 1.52 cd/A was obtained at 2 % doped condition in a CBP mixed cohost system.
OLEDp - 7

Fabrication of High-Efficiency Phosphorescent
Polymer OLEDs & Color Pattern by Using Screen
Printing
D. H. Lee, J. S. Choi, S. M. Cho
Sungkyunkwan Univ., Korea

We demonstrate highly efficient phosphorescent organic light-emitting
devices based on a green-emitting Ir(ppy)3 and a host polymer PVK
fabricated by screen printing. The best screen-printed single-layer
device exhibits very high peak luminous efficiency over 100cd/A with aluminance of 1,000cd/m2 at an operating voltage of 15V.
OLEDp - 8

Microdisplay System Using Field-Sequential Color
LCD with 3-Primary Colors OLED Backlight
S. H. Woo, D. H. Kim, Y. S. Do, Y. S. Han, B. D. Choi
Daegu Gyeongbuk Inst. of S&T, Korea

A field-sequential color (FSC) LCD micro display using newly designed
three primary colors organic light-emitting diode (OLED) device as abacklight unit (BLU) has been developed. The OLED backlight consistsof three primary color emitters parallel to each other. The operating
frequency is 255Hz. The 0.7" prototype FSC LCD system using OLEDBLU successively demonstrates color display and moving picture
image.

157

Thursday

December 6

OLEDp - 9

Viewing Angle Performances of the Photon-RecycledBlack-Cathode Organic Light-Emitting Device
T. Chiu, K. Chuang, C. Lin, Y. Ho, J. Lee, C. Chao,
M. Leung, D. Wan, C. Li, H. Chen
Nat. Taiwan Univ., Taiwan

We demonstrate a photo-sensitively OLED with a 12-times decrease inreflection for the entire visible range and at wide viewing-angles byusing a broadband absorptive and photo-sensitive MPPDI, combinedwith a semitransparent structure, Al/Ag, inserted between the MPPDI
and electron transporting layer to enhance the destructive interference.
OLEDp - 10

A Bus Electrode of Low Resistance and Simplified
Process
S. Yi, Y. S. Shin, D. W. Ihm, J. H. You*, T. H. Lee*,J. H. Kim*
Hoseo Univ., Korea*Daewoo Elect., Korea

We have developed a simplified process for the formation of bus
electrodes of low resistance in PMOLEDs using cathode separators.
Using this method, a single and bi-layer of aluminum and copper weretried out for bus and cathode electrodes. This method reduces the
fabrication process, and lowers the manufacturing cost.
OLEDp - 11

Bi-Directional OLED Microdisplay
U. Vogel, D. Kreye, B. Richter, G. Bunk, S. Reckziegel,
R. Herold, M. Scholles, M. Tker, J. Amelung
Fraunhofer Inst. for Photonic MicroSyss., Germany

A first prototype of a bi-directional OLED microdisplay device has been
designed, that combines both display and camera functionality on asingle CMOS chip (OLED-on-CMOS). Major aim of this integration is toprovide small form-factor display and eye-tracking for see-through HMD
applications (augmented reality).
OLEDp - 12

White Organic Electroluminescence from Electroplex
Based on the Solution-Processible Blue Aluminum
Quinolate Complex
J.-A. Cheng, C. H. Chen, H.-P. D. ShiehNat. Chiao Tung Univ., Taiwan

A saturated white device was obtained by using a blue Al(Saq)3 withdoping TMQA. Due to the electroplex formation during theelectroluminescence process, a white light emission was achieved. In
optimized devices, the saturated white emission was observed at
CIE1931 (0.33,0.35). Its maximum brightness was 25.4 cd/m2 at 13.4 V.

158

Thursday

December 6

OLEDp - 13

Withdrawn

OLEDp - 14

High Efficiency Red Light Emitting Phosphorescent
Organic Devices Having a Very Thin Polymer Layer
A. Imamura, S. Takeda, A. Mikami
Kanazawa Inst. of Tech., Japan

A high efficiency phosphorescent deep red OLED has been developedin the device consisting of light-emitting small molecule and carriertransporting polymer. The optimized device showed 20.2% in EQE and17.6-lm/W in power efficiency by employing very thin polymer layer on
the anode side and optically designed cathode structure.
OLEDp - 15

Low Voltage Operating Organic Light-Emitting
Devices with New Electron Transport Layer
M. Y. Ha, S. Y. Kim, D. G. Moon
Soonchunhyang Univ., Korea

We have developed low voltage operating OLEDs with new electrontransport layer. The device having a structure of ITO/2-TNATA/DPVBi
doped rubrene(1%)/DPVBi/new ETL/LiF/Al has been used. The
brightness rapidly increases as the driving voltage. The voltage forachieving 1,017 cd/m2 was 3.0 V, whereas the turn on voltage for thebrightness of 1 cd/m2 was 2.1 V.
OLEDp - 16

A New Quinoxaline Derivatives Containing Arylaminefor Application in Red Emitting Electroluminescent
DeviceJ.-S. Kim, S. J. Park, Y.-H. Kim, J.-T. Je*, S. O. Jung,
S.-K. Kwon
Gyeongsang Nat. Univ., Korea*SFC, Korea

The new red-light emitters were synthesized. Optical properties ofcompounds were characterized by UV-visible and PL spectra measured
in chloroform solution and film, respectively. The multi-layered lightemitting diodes exhibited the EL brightness and current density werereached at 7253 cd/m2 (7.78 V) and 4.55 cd/A (4.02 V), respectively.
OLEDp - 17Synthesis and Electroluminescent Properties of
Phenanthridine Derivatives
K.-S. Kim, S.-H. Han, S.-H. Park*, K. R. Ha*, B.-D. Choi
DGIST, Korea*Keimyung Univ., Korea

New emitting materials, DCzP (C43H27N3), DPoP (C43H27N3O2), and
DAnP (C47H29N), containing phenanthridine scaffold were synthesized.
The optical and electro-optical properties such as absorption,
photoluminescence (PL), electro-luminescence (EL), and electronic
band structure were investigated. The OLED devices containing thesynthesized materials as emitting layer were fabricated.
159

Thursday

December 6

OLEDp - 18

Synthesis and Characterization of Novel Red-LightEmitting Materials Based on Benzo[1,2,5]thiadiazole
Containing Arylamine as Electron Donor andCyanide as Electron Acceptor
J.-U. Ju, S.-O. Jung, J. W. Park, D. M. Kang, J. K. Park,
Y.-H. Kim, J.-T. Je*, S.-K. Kwon
Gyeongsang Nat. Univ., Korea*SFC, Korea

We designed a highly efficient red emitter that has short π-conjugation
length and inhibits intermolecular π-stacking due to its asymmetric bulky
structures. The red emitter was composed of benzo[1,2,5]-thiadiazole(BTD) as a core unit, and a triphenylamine electron donating group andmalonitrile electron withdrawing group as side units.
OLEDp - 19

Synthesis and Electro-Optical Property of Blue
Emitting Copolymer with Non-Conjugated Spacers
for Polymer Light-Emitting Devices
L. S. Park, E. J. Park, H. Q. Wang, E. J. Lyu, J. H. Kim,
K. H. Choi, G. D. Song, S. K. Jung
Kyungpook Nat. Univ., Korea

Several new polymers, with carbazole as pendant group, weresynthesized by palladium-catalyzed poly condensation reaction. These
polymers with conjugated chromophores separated by non-conjugatedspacers were characterized in UV-Visible spectrum andphotoluminescence properties in solution and film state. The electrooptical properties of the polymers were also studied for the PLED
devices.
OLEDp - 20

Blue Light-Emitting Diodes Based on
Naphtylanthracene Derivatives
J.-Y. Baek, S.-O. Jung, Y.-H. Kim, S.-K. Kwon
Gyeongsang Nat. Univ., Korea

Novel blue-light-emitting material, 9-(3,5-di(naphthalen-2-yl)phenyl)-10(naphthalen-2-yl)-anthracene, which was composed of an anthracenemolecule as the main unit and a naphtyl group side unit, wassynthesized by Suzuki coupling. It showed excellent thermal stability
and emitted bright blue light.

160

Thursday
OLEDp - 21

December 6
New Fluoranthene Derivatives for Application in
Orange Emitting Electroluminescent Device
S. O. Jung, S. J. Park, J.-S. Kim, J. K. Park, Y.-H. Kim,
J.-T. Je*, S.-K. Kwon
Gyeongsang Nat. Univ., Korea*SFC, Korea

The new orange-light emitter, fluoranthene derivative, was synthesized
and showed good thermal stabilities. Optical properties of compound
were characterized by UV-visible and PL spectra measured inchloroform solution and film, respectively. The multi-layered lightemitting diode exhibited the EL brightness and efficiency at 18600 cd/
m2(7.8 V), 11.75 cd/A(4.09 V), respectively.
OLEDp - 22

Electrical Characterization of Bathophenanthroline
Doped with Phthalic Acis, Dipotassium Salt
M.-T. Hsieh, C.-C. Chang, M.-H. Ho, C.-J. Chen,
J.-F. Chen, M.-T. Chen, C. H. Chen
Nat. Chiao Tung Univ., Taiwan

Bathophenanthroline (BPhen) doped with dipotassium phthalate (PAK2)
was electrically characterized using current-voltage (I-V) andtemperature-dependent admittance spectroscopy measurements. Fromexperimental results, great enhancements were observed with doping
devices. Accordingly, PAK2 is an alternative n-type organic dopant for ntype doping device.
OLEDp - 23

White Light-Emitting Organic Electroluminescent
Device Based on a Compound FluorescentPhosphor Emission Layer
T.-S. Shieh, H.-L. Huang, P.-C. Liu, M.-T. Chu,
M.-R. Tseng, J.-M. Liu
ITRI, Taiwan

We develop WOLEDs combined with fluorescent-phosphor emission
layer. The WOLED has an efficiency of 19.3 lm/W at 1000Cd/m2, and a
CIE coordinates of (0.43, 0.44), when the emission layer, fluorescentphosphor (F/P), double one. The WOLED has an efficiency of 14.7 lm/
W at 1000Cd/m2, and a CIE coordinates of (0.46, 0.45), when theemission layer is, fluorescent-phosphor- fluorescent (F/P/F), triple one.

161

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December 6

OLEDp - 24

Development of Monta Program for Material andProcess Design in Organic Electroluminescence andPlasma Display Panel
H. Takaba, H. Setogawa, H. Kikuchi, Y. Hayashi,
K. Ogiya, H. Onuma, C. Lv, S. Riadh, M. Koyama,
H. Tsuboi, N. Hatakeyama, A. Endou, M. Kubo, C. A. Del
Carpio, H. Kajiyama*, T. Shinoda*, A. Miyamoto
Tohoku Univ., Japan*
Hiroshima Univ., Japan

We present a novel computational chemistry simulator based on Monte
Carlo, namely “Monta” and “Monta-polymer”, for modeling a micro-scale
structure of industrially interested materials. These simulators enable tomodel hole/electron transport layer and to simulate contamination
phenomena at various environmental conditions. The application results
will be presented.
OLEDp - 25

Optics Characteristics of a Transparent Organic
Light-Emitting Device
Y. T. Chang, H. C. Chen, J. H. Lee, Y. W. Kiang,
C. C. Yang
Nat. Taiwan Univ., Taiwan

We studied theoretically optical characteristics of a transparent organic
light-emitting device. A simulation program was established based on
the rigorous electromagnetic wave theory which helped us to design atransparent OLED. The maximum ratio of light intensity between twosides achieves 1.52 when the device transmission was kept at 80%.
OLEDp - 26

Luminescent Properties in Emission Layer of WhitePolymer Light-Emitting Devices
F.-C. Wu, H.-L. Cheng, Y.-W. Wang*Nat. Cheng Kung Univ., Taiwan*Nat. Changhua Univ. of Education, Taiwan

White organic light-emitting devices (WOLED) using a polymer-dopant
system as an emission layer were fabricated. Photoluminescence andelectroluminescence spectra of the WOLED were very different
because an extraordinary energy transfer mechanism may exist
between used light-emitting materials.
OLEDp - 27

High Efficiency Tandem Device with Novel
Connecting Layers
H. L. Hsu, Y. M. Chiang, R. Nishikawa
TPO Displays, Taiwan

In this paper, the non-doping system of connecting layer to fabricate two
EL units in one device, which consists of a common electrode Al andnon-dopant hole injection/non-dopant electron injection layer on two
opposite sides. The efficiency is double with respect to the single unit
device, and the driving voltage is less than double voltage of single unit
device.
162

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OLEDp - 28

December 6
Top Emission Organic Light Emitting Devices with
Outcoupling Enhancement Layer
S.-Y. Kim, C.-J. Lee*, M.-Y. Ha, D.-G. Moon, J.-I. Han*
Soonchunhyang Univ., Korea*Korea Elect. Tech. Inst., Korea

We have developed outcoupling enhancement layer for top emission
organic light emitting devices (TEOLEDs) using CsCl layer. The CsCl
outcoupling enhancement layer improves the optical transmittance of
Ca/Ag double layer which have used as a semitransparent cathode,resulting in substantial increase of the luminance by the enhanced light
extraction out of the cathode surface of the TEOLEDs.
OLEDp - 29

Study on Carrier Transport Phenomenon in OLEDs at
Low Temperature
J. H. Youn, Y. I. Lee, W. S. Jeon*, J. J. Park*, Y. K. Lee*,T. J. Park*, H. T. Moon, J. Jang*
KAIST, Korea*Kyung Hee Univ., Korea

We have studied the carrier transport phenomenon in OLED [ITO/
PEDOT/Green-EML polymer/LiF/Al] at low temperature by investigating
mobility, color stability and EL spectrum change. With decreasing
temperature,the mobility decreases until 210K but increases below
210K, somewhat like band-like and hopping transport of polaron. At 60K
the EL spectrum shows a second peak, which appears to be due tophosphorescence emission.
OLEDp - 30

White Organic Light-Emitting Diodes with ColorConversion-Material as a Hole Injection Layer
C. Li*,**, B. Wei***, M. Ichikawa**, K. Sakurai*,
K. Kawaguchi*, Y. Taniguchi**, H. Kimura**
Shinshu Univ., Japan**
Fuji Elec. Advanced Tech., Japan***Shanghai Univ., China

We have fabricated white OLED with a blue EML and a color conversion
material HIL. The HIL can emit red photoluminescence through hostmaterial absorbs electroluminescence emission and transfer energy toguest dye. The drive voltage of device is only 11.5 V at 0.8A/cm2, andemissive chromatic-stability white emitting of three peaks at 470, 510
and 600 nm.

163Thursday

December 6

OLEDp - 31

Determination of Charge-Carrier Mobility in Organic
Light-Emitting Diodes by Impedance Spectroscopy
T. Okachi, T. Nagase, T. Kobayashi, H. Naito
Osaka Pref. Univ., JapanA new method has been proposed for the determination of chargecarrier mobility in OLEDs by impedance spectroscopy. It is found thatthe mobility of carrier injected from the Schottky contact whose barrierheight is less than 0.38 eV can be correctly determined by the method.
OLEDp - 32

High Performance OLEDs for Color Conversion
MethodY. Terao, N. Kanai, R. Makino, M. Kobayashi,
K. Kawaguchi, Y. Kawamura, H. Kimura
Fuji Elec. Advanced Tech., Japan

A highly power efficient wide-spectrum OLED for CCM-OLED display
was made by reducing the potential barrier for hole transportation in
addition to using the new electron-transporting material. The result is
attributed to the better balance between electron and hole. The device
achieved an operating voltage of 3.4V and a power-efficiency of 15.4lm/
W at 10mA/cm2.
OLEDp - 33

Experimental Study of Ag/LiF/PFO Interface for Top
Emitting PLEDs by Synchrotron Radiation
Photoemission Spectroscopy
S. H. Chou, Y. H. Lu, C. W. Teng, K. C. Liu, T. W. Pi*
Chang Gung Univ., Taiwan*Nat. Synchrotron Radiation Res. Ctr., Taiwan

No abstract was submitted.
OLEDp - 34

Optical Simulation for Top Emission PLEDs ofMicrocavity Structure with Sliver Anode and Metal/
TCO CathodeC. C. Chen, Y. C. Tsai, K. C. Liu, Y. T. Chang*, J. H. Lee*
Chang Gung Univ., Taiwan*Nat. Taiwan Univ., Taiwan

The optical characteristic for top polymer light-emitting devices (PLEDs)of microcavity structure with various thicknesses of metal and TCO
cathode was studied by simulation methodology. It demonstrated thatelectroluminescence（EL）intensity varies periodically with the changing
of TCO thickness. By simulations, an optimized enhancement can beobtained by tuning the thickness and material of cathode.

164

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OLEDp - 35

December 6Organic Bilayered Green Phosphorescent OLEDs
W. S. Jeon, T. J. Park, J. J. Park, S. Y. Kim, Y. K. Lee,J. Jang, J. H. Kwon
Kyung Hee Univ., Korea

We present a high efficiency green phosphorescent device with organic
bilayered structure by the application of the novel host that have a goodelectron transporting and energy transfer characteristics. The use of bilayered device simplified a complicated PHOLED, lead to low driving
voltage and high efficiency characteristic.
OLEDp - 36LBlue Glassy-Nematic OLED Oligomers for PolarizedElectroluminescence
H.-L. Huang, T.-C. Chao, M.-R. Tseng
ITRI, Taiwan

Novel aligned glassy-nematic OLED materials (MCL-OF) films on thinlayers of mechanically rubbed PEDOT:PSS allows the OLED devices
that emit blue light with high dichroic ratio of 13.44, a high current
efficiency of 1.15 cd/A and maximum brightness of 1240 cd/m2.
OLEDp - 37L

Novel High Energy Gap OLED Host Materials forGreen and Blue PHOLED Materials
C.-J. Lin*, H.-L. Huang, M.-R. Tseng, C.-H. Cheng*
ITRI, Taiwan*Nat. Tsing Hua Univ., Taiwan

We developed novel host materials with high energy gap andcompatible HOMO, LUMO levels for green and blue phosphorescentemitters. We demonstrated the green PHOLED with a low driving
voltage of 3V and a high efficiency of 38.5 lm/W. We also demonstrated
blue PHOLED with a low driving voltage of 2.5V and a efficiency of 7.3
cd/A.
OLEDp - 38L

Nano-Dot Enhanced High Efficiency Pure-White
Organic Light-Emitting Diodes
J. H. Jou, C. C. Chen, W. B. Wang, M. H. Wu,
S. M. Shen, Y. C. Chung, M. F. Hsu
Nat. Tsing Hua Univ., Taiwan

High-efficiency pure-white organic light-emitting diodes (OLEDs) were
fabricated using polysilicic acid nano-dot embedded polymeric holetransporting layer (HTL). By incorporating nano-dots into the HTL, a
mixed-host composed fluorescent white OLED showed a high efficiencyof 17.1lm/W. While the same concept applied on a solution-processed
phosphorescent white OLED, the efficiency had increased from 6.8 to23.7 lm/W, an improvement of 250%.

165

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December 6

OLEDp - 39L

Characterization of Co-Doped Organic Light Emitting
Diodes by Graded Doping Profile
Y. W. Park*, Y. M. Kim*,**, J. H. Choi*, J. W. Huh*,
B. K. Ju*
Korea Univ., Korea*
Opto Elect. Materials Res. Ctr., Korea

The versatile dye-dopants of OLEDs have their optimal doping
concentrations of different range. In this paper, we’ve studied the doping
concentration of co-doped emissive layer. With applying graded doping
profile, optimal co-doping concentration was clearly derived. The hostwas Alq3 and the two dopants were C545T and DMQA respectively.
OLEDp - 40L

Simulation and Suppression for the Moiré
Phenomenon for an OLED Display with Hollow
Microlens Array
H. Y. Lin, C.-C. Chen, K.-Y. Chen, J.-H. Lee, M.-K. Wei*
Nat. Taiwan Univ., Taiwan*Nat. Dong Hwa Univ., Taiwan

For OLED display application, a hollow microlens array has been
proposed for out-coupling efficiency enhancement and image blur
reduction. However, the moiré phenomenon has been observed
whenever the hollow microlens array is slightly rotated with respect tothe pixelated OLED array. By designing the array arrangement, it isshown that the moiré phenomenon can be suppressed.

Author Interviews
18:10 – 19:10

EXHIBITION
13:00–17:00
9:00–17:00
9:00–14:00

Wednesday, Dec. 5
Thursday, Dec. 6
Friday, Dec. 7

Main Hall C
Sapporo Convention CenterFree admission with your registration name tag.
166

Thursday

December 6

Workshop on 3D/Hyper-Realistic
Displays and Systems
Thursday, December 6
13:30 - 16:30

Main Hall C

Poster 3Dp: 3D and Hyper Realistic Display
3Dp - 1

Design of Parallax Barrier for Large Stereoscopic
Display by Use of a Fine-Pitch LED Panel
H. Nishimura, H. Yamamoto, Y. Hayasaki
Univ. of Tokushima, Japan

We investigate directivity of parallax barrier for a fine-pitch and wideviewing angle LED panel. We analyze the directivity of a conventional
parallax barrier and an aperture grille. We have developed an aperture
grille for a stereoscopic display by use of a 4-mm pitch LED panel with
110-degrees horizontal viewing angle.
3Dp - 2

3D/Hyper-Realistic Graphic Systems and Interactive
Virtual Art Education Strategy
N. Youssef
Helwan Univ., Egypt

Visual systems consider a very fast developed technology. Day after
day it becomes more sophisticated, and it is our duty to know, study,
and analyze new Systems for new applications. Paper discusses theapplications which evolving utilizing of 3D/hyber realistic systems in the
educational process. The research presumes that using interactive
visual systems could help establishing effective art educational strategy.
3Dp - 3L

3D Imaging on Virtual Display Using Polarized
Glasses
M. Adachi, K. Sakamoto
Shimane Univ., JapanThe authors proposed an enlarging method of display area using amirror last year. But this display provides only 2D image. In this report,
we present an extension method using a unidirectional diffusing image
screen and an improvement for displaying a 3D image using orthogonal
polarized image projection.

167

Thursday
3Dp - 4L

December 6
Extension of 3D Screen Region with LC Shutter
Glasses
H. Fukuda, K. Sakamoto
Shimane Univ., JapanThe authors have researched optical techniques for the virtual display
using mirror image. In this report, we present an enlarging method of
3D display area using LC shutter glasses. Our extension method
enables the observers to show the virtual stereoscopic image plane andto enlarge a screen area twice.
3Dp - 5L

6-band Computer Graphics Rendering Software forInteractive Accurate Coloring Simulation
M. Hashimoto
NTT Data, Japan

Real-time 6-band CG rendering software for coloring simulation wasdeveloped. 6-band CG is rendered using measured reflectance of color
samples. Rendered 6-band CG is converted into RGB image using
illumination and display characteristics. These processes are carriedout using GPU of graphics board on PC for showing simulation resultinteractively.
----- Break -----

16:50 - 16:55

Mid-sized Hall B

Opening
Opening Remarks
16:50
I. Yuyama, Utsunomiya Univ., Japan
16:55 - 18:05

Mid-sized Hall B

3D1: Hyper Realistic Display and Acquisition Systems
Chair:
Co-Chair:
3D1 - 1:
16:55

W. J. Tam, CRC, Canada
S. Yano, NICT, Japan
Invited Evaluation of Hyper-Realistic Image with
Smell
A. Tomono
Tokai Univ., Japan

Smells were coordinated with images using an olfactory display that
released various smells near the user’s nose, and the psychology of thesubject viewing the image was examined. We found that smell
presentation reinforces both the realistic sensation and theunderstanding of the content of the image.

168

Thu./Fri.
3D1 - 2
17:25

December 6/7
3-Dimensional Displaying in Liquid
A. Chekhovskiy*,**, Y. Ohira*,**, H. Toshiyoshi*,**Univ. of Tokyo, Japan**
Kanagawa Ac. of S&T, Japan*

A displaying of 3D dynamic images inside of transparent liquid wasdemonstrated experimentally for the first time. Laser breakdown microflashes were used as 3D pixels. Tap water was found to be the optimalliquid medium. Electronic color filter was used for dynamic coloring of
flashes.
3D1 - 3
17:45

Hybrid TOF and Stereoscopic 3D Video Acquisition
S. Gurbuz*,**, N. Inoue*,**
NICT, Japan**
ATR, Japan*

This paper describes the motivation, goal and methods for the hybrid
approach of 3D video acquisition. The system is based on a time-offlight (TOF) range camera and a conventional CCD stereo cameras
enabling virtually parallel image channels for improving the disparity
calculation of a dense 3D video acquisition system.

Author Interviews
18:10 – 19:10

Friday, December 7
13:30 - 15:00

Mid-sized Hall B

3D2: 3D Display
Chair:
Co-Chair:
3D2 - 1:
13:30

J.-Y. Son, Daegu Univ., Korea
M. Hashimoto, NTT Data, Japan
Invited Recent Research and Development on High
Resolution Stereoscopic Display Based on LCD
Panel
D.-S. Kim, S. Chestak
Samsung Elect., Korea

We have developed a high resolution stereoscopic display used by theconventional LCD panel driven up to 120Hz frame rate. This display iscapable of switching 2D and 3D applications simultaneously without
loss of resolution. Left and right images are sequentially formed byusing a fast LC shutter for autostereoscopic display as well asstereoscopic display.

169

Friday

December 7

3D2 - 2
14:00

128-Directional SVGA Display for Generating NaturalThree-Dimensional Images
Y. Takaki, K. Kikuta
Tokyo Univ. of A&T, JapanA 128-directional display having SVGA resolution is developed as anatural 3D display. It consists of 128 small projectors employing LCOS
devices. A double lenticular sheet is used as a display screen. The
image distortion is less than 1.5%. A 3D image can be interactively
manipulated using a PC cluster.
3D2 - 3
14:20

A Viewer-Tracking-Based 2D/3D Switchable
Autostereoscopic Display with Motion Parallax
W. L. Hsu, C. S. Wu, L. C. Lin, C. L. Wu, C. H. Tsai,
K. Lee
ITRI, Taiwan

A viewer-tracking-based 2D/3D switchable autostereoscopic display offast tracking response and smooth motion parallax is developed. By
inserting a micro-retarder plate and a PDLC panel, a 2D/3D switchable
autostereoscopic display is made. Integrated with viewer-tracking
system, a multi-view autostereoscopic display capable of very highnumber of views for single user can be achieved.
3D2 - 4L
14:40

Auto-Stereoscopic 30-View 3D Displays in Mobile
Applications
S. M. Jung, H. J. Im, B. J. Lee, H. K. Hong, H. H. ShinLG.Philips LCD, Korea

Auto-stereoscopic 3D of 30-view number was made using slanted
lenticular lens array and 2.4" LCDs having VGA resolution. Due to its
large view number, smooth motion parallax is observed and the visual
fatigue was reduced. From the results, it was revealed that the 30-view
3D displays can be feasible to mobile displays.
3D2 - 5L
14:50

Quadruple Extension of Display Area Using Mirror
Image
K. Sakamoto, M. Adachi, H. Fukuda
Shimane Univ., JapanThe authors have researched optical techniques for an enlarging
method of display area using a mirror image. This extension method
enables observers to show the virtual image plane and to enlarge ascreen area twice. In this report, we present a new extension method toenlarge a screen area quadruple.
----- Break -----

170

Friday

December 7

15:10 - 16:20

Mid-sized Hall B

3D3: Holography
Chair:
Co-Chair:
3D3 - 1:
15:10

I. Yuyama, Utsunoimiya Univ.
T. Mishina, NICT, Japan
Invited Natural Three-Dimensional Display System
Based on Wavefront Reconstruction
O. Matoba, K. Nitta
Kobe Univ., Japan

A natural three-dimensional display system based on wavefront
reconstruction is presented. The presented system consists of arecording system of capturing three-dimensional data, a dataprocessing system to manipulate three-dimensional objects, and areconstruction system of three-dimensional object based on wavefront
reconstruction. Numerical and experimental results are presented.
3D3 - 2

Withdrawn

3D3 - 4L
15:40

Three-Dimensional Image Reconstruction of RealObjects with Electronic Holography using 4K2K
Liquid Crystal Panels
T. Mishina, R. Oi, J. Arai*, F. Okano*, M. Okui
NICT, Japan*NHK STRL, Japan

This paper described electronic holography that can record andreconstruct real objects. Holograms were obtained by calculation fromimages captured using integral photography. The viewing zone wasenlargedbythreehigh-resolution
liquidcrystalpanels.
Autostereoscopic images of real, moving objects could be viewed at a
distance of 40 cm.
3D3 - 3
16:00

Electroholography for Object Image Composed of
100,000 Points
Y. Ichihashi, T. Nakayama, A. Shiraki, Y. Abe,T. Shimobaba*, N. Masuda, T. Ito
Chiba Univ., Japan*Yamagata Univ., Japan

We improved the HORN-5 system, originally developed in 2004 by our
research group as a special-purpose computer, to handle an object
consisting of 100,000 points. We modified the word length of the data in
HORN-5, and we achieved reproduction speed of 10 frames per secondby the improved HORN-5 system.
----- Break -----

171

Friday

December 7

16:50 - 18:10

Mid-sized Hall B

3D4: Human Factor and 3D Display
Chair:
Co-Chair:
3D4 - 1:
16:50

D.-S. Kim, Samsung Elect., Korea
M. Hashimoto, NTT Data, Japan
Invited Human Factors and Content Creation for
Three-Dimensional Displays
W. J. Tam
CRC, Canada

The human visuo-cognitive system is exploited to obtain convincing
stereoscopic depth from 2D images. Two techniques for generating
depth maps, utilizing either edge information or the colour componentsof the 2D images, are described. The synthetic depth maps are thenused in depth-image-based rendering to generate stereoscopic image
pairs.
3D4 - 2
17:20

Viewing Zones in Non-Integer Type Pixel Cells
J.-Y. Son, V. V. Saveljev, S.-H. Kim, K.-H. Cha*
Daegu Univ., Korea*Samsung Elect., Korea

A pixel cell is a basic unit of arranging multiview images on a display
panel, The number of pixels in a direction of a pixel cell is not an integer
but a non-integer duo to the design constraint. This is one factor of
reducing the quality of image in contact-type multiview 3 dimensional
imaging systems. To estimate the quality, the compositions of theimages at different viewing regions of the systems are analyzed.
3D4 - 3
17:40

A 2.4-in. 4-View 3D Display
B. S. Kim, H. Nam, C. Y. Park, J. S. Ku, H. W. Jang,
J. E. Park, H. D. Kim, H. K. Chung
Samsung SDI, Korea

We have developed a 2.4inch 4-view 3D display. Its resolution of 3D isonly reduced to a half of resolution of 2D in spite of adoption a multiview displaying system, because we have used the special time division
method.

172

Friday

December 7

3D4 - 4L
18:00

Adjustment of Viewing Conditions for Pitch of Large
Stereoscopic LED Displays
K. Yamaguchi, H. Yamamoto, Y. Hayasaki
Univ. of Tokushima, Japan

This paper describes a display method for each pitch of stereoscopic
LED displays so that the object range corresponds to the allowable
object range. The shift of stereoscopic images and the viewing distance
are adjusted based on analysis on image-acquisition and stereoscopic
display system.

Author Interviews
18:10 – 19:10

Supporting Organization:
Holographic Display Artists and Engineers Club (HODIC)BANQUET
Wednesday, December 5
19:30–21:30
Palace Ballroom (3F)
Sheraton Sapporo HotelSee page 10 for details

EVENING GET-TOGETHERWITH WINE
Tuesday, December 4
18:00–20:00
Restaurant “Sora”, Sapporo Convention Center(Sponsored by Merck Ltd., Japan)
See page 10 for details
173

Thursday

December 6

Workshop on
Applied Vision and Human Factors
Thursday, December 6
9:00 - 10:40

Mid-sized Hall B

VHF1: Motion Blur
Chair:
Co-Chair:
VHF1 - 1:
9:00

J. S. Lee, Samsung Elec., Korea
C. Teunissen, Philips Consumer Elec., The Netherlands
Invited Measurement and Evaluation of Moving
Picture Resolution: From Milliseconds to TV-Lines
I. Kawahara*,**, M. Kasahara*,**, T. Shinoda*
Advanced PDP Development Ctr., Japan**Matsushita Elec. Ind., Japan*

Innovative measurement on moving picture resolution has been
established. Unlike previous approaches for motion blur, This method
scrolls 4-cycled sine bursts to detect the limit resolution in TV lines.
Subjective test and automated system are developed, showing
excellent coincidence to each other. The method, being simple and also
powerful, clearly discriminates the performances of high-end TVs in themarket.
VHF1 - 2:
9:30

Invited Subjective Evaluation of Motion Blur by Usinga Stationary Image
Y. Enami, M. Okawauchi, M. Kikuchi*
Otsuka Elect., Japan*
Osaka, Japan

Presently, MPR is being used as an LCD blur edge evaluation method.
On the other hand, an evaluation method that uses the CSF is also
discussed as it is assumed to have a visual correlation with otherdevices. We performed a subjective tests using a blur edge model andbased on this result, examined and compared these evaluation
methods.
VHF1 - 3
10:00

Motion Blur Analysis by Gabor Patch
K. Oka, D. Oka
Nanosoftware, Japan

Motion blur of displays is analyzed by using Gabor patch. Normalizedradius of patch at Fc*Ss=1 indicates motion blur. That of CRT monitor isunity indicating no motion blur. Those of LCD monitors are from 0.5 to
0.6. Panels with small motion blur are tested to be 0.9 to 1.0.

174

Thursday
VHF1 - 4
10:20

December 6
Correlation Analysis between Motion Blur Width andHuman Perception
K. Hirai, T. Nakaguchi, N. Tsumura, Y. Miyake
Chiba Univ., Japan

In this paper, the availability of perceived blur edge width (PBEW) was
examined by analyzing the correlation between observer rating values
and the physical properties that were extended blur edge width (EBEW)
and PBEW. From our results, PBEW was correlated with observer
rating values more than EBEW.
----- Break -----

11:00 - 12:10

Mid-sized Hall B

VHF2: Color Breakup
Chair:
Co-Chair:J. Bergquist, Nokia Japan, Japan
I. Kawahara, Panasonic AVC Networks, Japan

VHF2 - 1:
11:00

Invited Advanced Motion Induced Color-Artifact
Analysis Methods in FPD
J. S. Lee, J. H. Souk
Samsung Elect., Korea

Motion artifact of display has a huge interest from industries and users
recently. Among those artifacts, color abberation (color break up anddynamic false contour) is the main degrading characteristic in field
sequential type displays and plasma displays. Unfortunately, there are
no objective measurement methods for those motion artifacts. We
introduce advanced analysis methods for motion induced color
abberation artifacts.
VHF2 - 2
11:30

Spatio-Temporal Colour LCD-TV with LED Backlight
G. Cennini, O. Belik, E. Langendijk, F. Vossen
Philips Res. Labs., The Netherlands

We report on the realization of a spatio-temporal colour LCD-TV basedon LED backlight technology. Spatio-temporal synthesis of images is atechnique in which two (instead of the three color filters) are used andtwo (or more) temporal color fields are generated to make a full color
image.

175

Thursday
VHF2 - 3
11:50

December 6
An Experimental Platform for Evaluating Color
Breakup Phenomenon
C.-F. Hsu, C.-N. Wu, W.-C. Cheng
Nat. Chiao Tung Univ., Taiwan

An RGB-LED-backlit LCD was implemented for psychophysical study ofcolor breakup phenomenon. The backlight module is capable ofgenerating colors either sequentially or simultaneously to emulate afield sequential or conventional display. A new method of visualexperiment is also proposed for assessing human subject’s detectabilityof color breakup phenomenon.
----- Lunch -----

13:30 - 16:30

Main Hall C

Poster VHFp: Applied Vision and Human Factors
VHFp - 1

Preferred Color Reproduction for Image Color
Enhancement and Skin Color Adjustment
P.-L. Hsieh, Y.-J. Lee, H.-T. Lin
Chunghwa Picture Tubes, Taiwan

In this paper, we propose an effective system for preferred color
reproduction. In this system, color is transformed gradually according todifferent saturation for color enhancement and the skin area of image isprocessed specifically. The experimental results show that the proposed
method can make image more vivid and the skin area of image can be
adjusted very easily.
VHFp - 2

A Vivid Color Management for LCD TV Adjusting
Skin Color with RGB Signal Reconstruction
M.-C. Kao, Y.-J. Lee
Chunghwa Picture Tubes, Taiwan

A faster algorithm for adjusting human skin color was proposed. The
algorithm has two processes includes skin color detection and to Hueand Saturation adjustment. Additionally, it can reduce the contour
artifacts between skin area and non-skin area. This novel technology
was successfully implemented in 37" and 47" LED Backlight - LCD TV.
VHFp - 3

Image Color Gamut Enhancement Using Rich Color
Method for Mobile Displays
J.-S. Li, C.-C. Lai, C.-F. Hsu
Wintek, Taiwan

A novel real-time pixel-level rich color method is presented to enlarge
averagely 34% image color gamut without hue distortion, frame and line
memory. Experimental results show the usefulness on a 2.2-inch mobile
phone TFT LCD.

176

Thursday
VHFp - 4

December 6
Influence of Image Degradation on Accommodative
Responses during Subjective Image Quality
Evaluation
T. Matsui, T. Fujita, S. Sakai, T. Shinozaki
Gunma Univ., Japan

We have clarified the relation between image quality degradation andaccommodation lag by measuring accommodative responses during
subjective evaluation for sharpness or noise. Images used here were
three kinds of generalized knife-edge images. This suggests somepossibility that the accommodative characteristic is influential in humansubjective judgments about image quality.
VHFp - 5

A Study on Temporal Properties of Surface
Perception Using the Probing Method of Poggendorff
Configuration
Q. Wang, M. Idesawa
Univ. of Electro-Commun., Japan

Temporal properties are essential issues of surface perception; they
were investigated by using the probing method of the Poggendorff
configuration. We referred that illusory surface was necessary to keep
remained for perceiving till the afterimage of real lines disappeared. The
probing method is effective for detecting opaque surface perception.
VHFp - 6

A New Method to Do Stereo Matching in Curved
Surface
Z. Xu, M. Idesawa
Univ. of Electro-Commun., Japan

Mask Scale Adjusting (MSA) stereo matching method: a new method
for solving the scale difference problem, which is occurred on a curved
surface and deteriorate correspondence accuracy in conventional
method, is proposed and examined. By applying the MSA method insynthetic and real stereo images, we proved that the MSA method iseffective to obtaining more precise correspondence.
VHFp - 7

False Contour Decrease Method in Color Conversion
for RGBW Primaries
H. Ito, M. Takaya, Y. Shimodaira
Shizuoka Univ., Japan

False contours are often generated by the color conversion for multiprimaries. In this research, it was confirmed that variety of the gamma
values of the primaries influenced the cause of false contours. The false
contours were reduced by averaging signals corresponding toconditions of minimum and maximum power consumption in our color
conversion method based on the linear programming.

177

Thursday
VHFp - 8

December 6Color Difference-Based Adaptive Noise Reduction
for Images
Y. Amano, Y. Shimodaira
Shizuoka Univ., Japan

We proposed a noise reduction method that keeps color and edge
information correct, and reduces noise in images. And this method
optimized color signal values by using color information of circumjacentpixels with Genetic Algorithm. As the results of the experiments, theproposed method is confirmed to be effective for reproducing highimage quality.
VHFp - 9

3D Object Reconstruction from Single 2D Line
Drawings without Hidden Lines
H. Suzuki, K. Shoji, M. Nagai, F. Toyama, J. Miyamichi
Utsunomiya Univ., Japan

We can perceive 3D objects including their hidden sides from their 2Dline drawings without hidden lines in many cases. In this paper, we
propose an approach to the 3D object reconstruction from single line
drawings without hidden lines simulating our perceptual tendencies.
VHFp - 10

Speaker Identification of Speech Balloons in Comic
ImagesT. Tanaka, K. Shoji, F. Toyama, J. Miyamichi
Utsunomiya Univ., Japan

In this paper, a method for speaker identification of speech balloons byusing opening operation of morphological processing is proposed.
Experimental results show that 72 per-cent of 219 speech balloons
within 90 pages in one print comic material successfully correspond totheir correct speakers by the proposed method.
VHFp - 11

Eye Movement in Reading Comics
S. Chiba, T. Tanaka, K. Shoji, F. Toyama, J. Miyamichi
Utsunomiya Univ., Japan

In this research, the eye movement between scene frames is examinedwhen reading comics. Experimental results show that subjects mainly
read speech balloons or narrative texts. It is considered that forward
jumping often occurs at scene frames without speech balloons.
Backward jumping occurs followed by forward jumping.
VHFp - 12

Evaluation for Indistinct Mura in LCDs Based on
Human Vision
Y. Masakura, T. Tamura, T. Satoh, T. Uchida
Tokyo Polytech. Univ., Japan

We examined subjective evaluations for indistinct Mura of LCD. It was
revealed that three numerical indexes of 1) number of pixels which were
200 or less in 256 gray scale levels, 2) sum of Mura edge areas, and 3)
sum of Mura edge lengths would be important for subjective
evaluations.
178

Thursday
VHFp - 13

December 6
Conditions for Illumination Spectrum in Field
Sequential Color Imaging that Achieve Hi-Fi Color
Reproduction on Field Sequential Color Displays
without Causing Side-Effective Color Breakup
S. Uezono, G. Sugiura*, Y. Suzuki, K. Sekiya,
T. Miyashita, T. Uchida
Tohoku Univ., Japan*Pentax, Japan

Combined systems of field sequential color cameras and field
sequential color displays show a good performance against color
breakup. We identified a condition for high fidelity color reproduction on
the systems with preserving the color-breakup-free characteristics. We
also estimated implementability of the condition with combinations ofsmall numbers of different wavelength LEDs.
VHFp - 14L

Effects of Aging on the Legibility of Characters on
Mobile Phone Displays
S. Matsunuma, S. Hasegawa*, K. Fujikake**, M. Omori***,M. Miyao**, T. Umezaki
Nagoya Inst. of Tech., Japan*Nagoya Bunri Univ., Japan**Nagoya Univ., Japan***
Kobe Women’s Univ., Japan

Nowadays, mobile phones are very popular in the world. The use of text
email with short message service (SMS) is spreading. When characters
are small, younger people assure readability by shortening the viewing
distance. Conversely, elderly people find it far more difficult to see small
characters beyond a given.
VHFp - 15L

Aberrations Study for Human Vision between Eyes
Simulation and Images for Displays and Ophthalmic
OpticsY.-C. Fang, C.-Y. Wang*, W.-T. Lin, J.-L. Jon
Nat. Kaohsiung First Univ. of S&T, Taiwan*I-Shou Univ., Taiwan

This study proposes a new method for investigating human eye
anatomy via simulation and experiment. Eye models are studied andmodified by ray-tracing program CODE V with MTF; which will becompared with statically experimental results of ECTF (Eyes Contrast
Transfer Function); New proposed ECTF is expected to use in researchfor both Display and ophthalmic optics in the future.

Author Interviews
18:10 – 19:10

179

Friday

December 7
Friday, December 7

10:40 - 12:10

Mid-sized Hall A

VHF3: Display Image Quality
Chair:
Co-Chair:N. Hiruma, NHK, Japan
Y. Hisatake, Toshiba Matsushita Display Tech., Japan

VHF3 - 1:
10:40

Invited Display Technology Trends Perceived from a
Consumer (Electronics) Point of View
C. Teunissen, C. L. M. van der Klauw
Philips Consumer Elect., The Netherlands

Until recently, the form factor of flat panel displays was the main driverin TV applications. Still the motion performance and viewing angle of
LCDs are subject for improvement, but in other areas they are,specification wise, superior over CRTs. Are all improvements perceived
and appreciated by end-consumers? Perception studies can provide
insight in the consumer value of technological developments.
VHF3 - 2
11:10

A Comparison of the Quantitative Human Visual
Evaluation of LCD and PDP
H. Lee, K.-W. Whang
Seoul Nat. Univ., Korea

We studied the human visual evaluation with Flat Panel Displays toclarify the viewer preference and the related physical and physiologicalfactors. Psychological method and eye motion tracking camera
evaluation were carried out. In our research, the optimum display forviewers should show more soft and smooth image, not so bright one.
VHF3 - 3
11:30

Effect of the Viewing Distance on Visual Fatigue for
TV in a House
K. Sakamoto, S. Aoyama, M. Matsuoka, S. Asahara,
K. Yamashita*, A. Okada*Matsushita Elec. Ind., Japan*
Osaka City Univ., Japan

In this study, we tried the evaluation experiments that measured theeffect of viewing distance on visual fatigue. It was found that at
distances between 2 and 6 times the display height, visual fatigue wasminimized but in some cases, the sympathetic nerve activity was
highest at the same distance.

180

Friday
VHF3 - 4
11:50

December 7
Image Quality Assessment for Displayed Color
Halftone Images Based on Structural Similarity
J. H. Lee, T. Horiuchi, S. Tominaga
Chiba Univ., Japan

We propose a new image quality assessment method based on the
structural similarity measure for displayed color halftone images withconsidering the human visual characteristics. We apply this measure to
the various kinds of color halftone images. Then, we confirm that themeasure is coincident with the subjective evaluation well.
----- Lunch -----

13:30 - 14:55

Mid-sized Hall A

VHF4: Moving Image Quality
Chair:
Co-Chair:C. Teunissen, Philips Consumer Elec., The Netherlands
J. Someya, Mitsubishi Elec., Japan

VHF4 - 1:
13:30

Invited Signal Processing Technology for Improving
Motion Picture on FPD-TV
Y. Mizuhashi
Hitachi, Japan

Improving Motion picture quality is one of the major concerns of today’s
FPDs. PDPs in PAL format have a flicker problem and LCDs have a
motion blur. This paper describes the improving motion picturetechnology to reduce them by frame rate conversion and motion
compensated frame rate conversion LSI.
VHF4 - 2
14:00

Measurements of Brightness and Moving Image
Characteristics of Recent Flat Panel Displays
T. Yamamoto, M. Kurozumi, M. Yamamoto, O. Tamaru,
H. Arata*, N. Otsubo, E. Nakasu, K. Ishii, T. Kurita,
K. Minomo, T. Kikkawa
NHK, Japan*NHK Integrated Tech., Japan

The penetration of flat panel displays, or FPDs, has rapidly spread inrecent years. FPDs have different image display characteristics withcathode ray tubes (CRTs). This paper outlines our FPD measurements
and the basic characteristics for brightness, moving image
characteristics, etc.

181

Friday
VHF4 - 3
14:20

December 7
Moving Picture Response Time Simulation by
Accurate Luminance and Temporal Measurements
for the LCD
D.-H. Pan, J.-F. Huang, Y.-H. Hung
ITRI, Taiwan

Many papers propose moving picture response time simulation bymeasuring response time of the LCD. Although it doesn’t consider the
angular field of view, we have presented our novel optical measurement
system to acquire luminance, temporal response, and view angle
measurement followed by VESA 2.0. Due to our accuracy luminancemeasurement, the MPRT could be simulated easily by our metrology.
VHF4 - 4L
14:40

Comparison PBET with BET for Liquid Crystal
Display from the Viewpoint of HVS (Human Visual
System)S. A. Park, K. H. Shin, K. T. Kim, M. J. Lim, H. H. ShinLG.Philips LCD, Korea

The measurement of motion blurs was performed by a pursuit camera,
and the results were analyzed through the methods of BET & PBET.
From experiments, it is concluded that PBET is not enough to reflect
actual perceived motion blurs at lower gray levels in a specific type of
LCDs.
----- Break -----

15:10 - 16:30

Mid-sized Hall A

VHF5: Color
Chair:
Co-Chair:Y. Shimodaira, Shizuoka Univ., Japan
T. Matsumoto, Sony, Japan

VHF5 - 1
15:10

The Ergonomics Requirement for Reproducible Areaof Color Chromaticity in Electronic Displays
Y. Hisatake, A. Ikeda, H. Ito, M. Obi, Y. Kawata,
A. Murayama
Toshiba Matsushita Display Tech., Japan

We studied ergonomics requirements of color reproduction range ofelectronic displays and its shape in the chromaticity diagram throughsubjective evaluation for chroma using several pictures of objects orlandscapes consisting of some memory colors with high chroma andvarious color hues.

182

Friday
VHF5 - 2
15:30

December 7
Relationship between Color Appearance and Color
Gamut of the Display
M. Sakurai, R. L. Heckaman*, M. D. Fairchild*,
T. Nakatsue, Y. Shimpuku
Sony, Japan*Rochester Inst. of Tech., USA

The effect of varying color gamut of display to color appearance wasmeasured to investigate the relationship between color appearance andgamut volume in terms of psychophysical metrics. The interval scales
for colorfulness perception monotonically increases with the gamut area
in xy diagram while it becomes less sensitive with the gamut volume incolor spaces.
VHF5 - 3
15:50

Measurement of Color Reproduction Characteristics
of Recent Flat Panel Displays
K. Ishii, K. Masaoka, K. Kurozumi, T. Yamamoto,T. Kurita, M. Yamamoto, O. Tamaru
NHK, Japan

We measured color reproduction characteristics of recent flat panel
displays or commercially available consumer devices. The green andcyan color reproduction areas are extended on some PDPs and LCDs,
compared with the standard color gamut. Such displays show large
color reproduction errors for those colors.
VHF5 - 4
16:10

Proposal of Tile Palette as a Color Palette on a
Display
A. Chikawa, N. Hiruma*, Y. Tada
Univ. of Electro-Commun., Japan*NHK, Japan

Tile Palette is proposed for mixing colors freely on display like painting
its user can set up the color space in the real world. It can also visuallyshow quantity of the used color for mixing and process of mixing color
by tile interface which doesn’t need specialized knowledge.
----- Break -----

16:50 - 17:45

Mid-sized Hall A

VHF6: Display Characteristics & Vision
Chair:
Co-Chair:S. Clippingdale, NHK, Japan
M. Sakurai, Sony, Japan183

Friday
VHF6 - 1
16:50

December 7
A Modified Stripe-RGBW TFT-LCD with ImageProcessing Engine for Mobile Phone Displays
C.-F. Hsu, C.-C. Lai, J.-S. Li
Wintek, Taiwan

A Modified Stripe-RGBW (MS-RGBW) color filter structure can keephigh resolution, and obtain higher brightness in comparison withconventional RGB color filters. Image-process engine obtains a new
RGBW image data without hue and saturation distortion and saturationand transfers RGBW data into a MS-RGBW color filter structure toachieve sharp text image.
VHF6 - 2
17:10

A New Type of 3D Visual Effect Produced by Cyclic
Display of a Pair Images with Slight Disparity
M. Idesawa, X. Chen, Q. Wang
Univ. of Electro-Commun., JapanThe velocity field could be produced by cyclic display of three images
including a pair image with slight disparity; 3D perception such as
depth, surface, structure and volume perception are obtained almost
the same as to that in the continuous real motion; and expected to be
applied for generating special visual effect only using the three frame
images.
VHF6 - 3L
17:30

Effects of LCD-TV’s Polarizing Characteristics on
Visual Fatigue
X. L. Yan, D. Fu, C. C. Zhu, X. W. Xie, X. W. Sun,
H. Zhang, W. D. Huang
TCL, China

Effects of LCD-TV’s polarizing characteristics on visual fatigue during along time watching are investigated. Electrooculagram (EOG) andGrading-vision measurement are used to evaluate the visual fatigue of
subjects before and after watching. Data indicate that circular polarizedtransmission light from LCD-TV causes less visual fatigue comparedwith normal LCD-TV.

Author Interviews
18:10 – 19:10

Supporting Organization:
Technical Group on Information Display, ITE

184

Thu./Fri.

December 6/7

Workshop on Projection and Large-Area
Displays, and Their Components
Thursday, December 6
13:30 - 16:30

Main Hall C

Poster LADp: Projection
LADp - 1

Free Curvature Prism Lens Design and Manufacture
for Eye Glass Display with 0.59-in. OLED Panel
T. H. Kim, K. B. Park, M. J. Kim, H. C. Moon
Korea Elect. Tech. Inst., Korea

We designed a free curvature prism lens for Eye Glass Display (EGD)with 0.59" OLED panel, and applied it in micro display of organic lightemitting device. It had a 42° field of view (FOV) and 25mm eye relief,
which satisfied with the requirement of EGD.
LADp - 2

The LCOS Single Panel Mini-Projector Using LED
Light Source
H. H. Lo, S. C. Chung, C. C. Lin
ITRI, Taiwan

A six lumens LED projector with non-telecentric illumination isdemonstrated. The pin-fin heat sink can bring out the heat in a more
effectively way, and keep the LED operating at low temperature.
LADp - 3

High Collecting Efficiency and Light Recycling
Illumination System for LEDs RPTV
S.-C. Chung, C.-C. Lin, T.-Y. Chen, C.-H. Fan,
L.-P. Chung
ITRI, Taiwan

A development of a 50 inch, 3-panel LEDs RP TV using LEDs as thelight source. With the recycling and collecting illumination system, aprototype of LED RPTV is realized. The brightness of LEDs RPTV isover 200 nits and its color uniformity is around 85%.

Friday, December 7
9:00 - 10:20

Conference Hall

LAD1: Projection Components and Systems
Chair:
Co-Chair:

D. Cuypers, Imec, Belgium
S. Shikama, Mitsubishi Elec., Japan185

Friday
LAD1 - 1
9:00

December 7
A Driving System for HTPS 3-LCD Projector
Optimized for Double Frame Rate Video Source to
Improve Motion Picture Image Quality
T. Nishimori, T. Toyooka, H. Iisaka, K. Takeda
Seiko Epson, JapanA new driving system optimized for a double frame rate video source
has been developed for an HTPS 3-LCD projector. A good balance
between performance and circuit resources was achieved by
implementing the Direct Driving method in which HTPS-TFT-LVs are
directly driven by the double frame rate video source.
LAD1 - 2
9:20

Fast Switching Vertically Aligned Microdisplays
D. Cuypers, H. De Smet*, A. Van Calster*Imec, Belgium*
Ghent Univ., Belgium

Up to now, LCOS employing VAN are only used in three-panel
configurations because the LC was considered not fast enough forcolor-sequential operation. This paper presents measurements of VAN
cells using recent LC mixtures which indicate that color-sequential
operation is possible, both for digital driving using PWM and for analog
driving if color accuracy is not primordial.
LAD1 - 3
9:40

Compact Lamp with Sub Reflector and High
Efficiency Illumination Optics for Projector
T. Hashizume, T. Takezawa, K. Akiyama
Seiko Epson, Japan

170-watt E-TORL (EPSON twin optimized reflector lamp) and theparallel and compact illumination optics are developed. E-TORL yields asmall etendue. Its lifetime is long. The illumination transmits
considerable light. A compact and bright projector with 0.7-in XGA
LCDs has been developed using this system.
LAD1 - 4
10:00

Diffusing Property of a Display with High Brightness
and Uniformity Considering with a Human Eye
Property
B. Katagiri, T. Kawakami, Y. Kuratomi, K. Hiyama,
K. Takamura, Y. Suzuki, T. Uchida
Tohoku Univ., Japan

Projection displays, large PDP and LCD, consume large amounts ofpower because of their large screen. In this study, we examined the
diffusion properties of such displays, focusing on the front brightness.
We optimized the diffusion properties to permit the implementation ofhigh-quality projection displays. This optimization decreases the totalluminosity compared to uniform diffusion, and will reduce power
consumption.
----- Break -----

186

Friday

December 7

10:40 - 12:30

Conference Hall

LAD2: Solid State Lightsources
Chair:
Co-Chair:
LAD2 - 1:
10:40

M. Jansen, Novalux, USA
K. Takeda, Seiko Epson, Japan
Invited Light Emitting Devices Based on SemipolarOriented InGaN/GaN Quantum Wells
Y. Kawakami, M. Ueda, M. Funato, Y. Narukawa*,
T. Mukai*
Kyoto Univ., Japan*Nichia, Japan

Two different types of light emitters based on InGaN/GaN quantum
wells (QWs) are discussed; one is microfacet QWs and the other issemipolar light-emitting diodes (LEDs). We demonstrate the control ofemission color including white in microfacet QWs and blue, green, andamber LEDs in planar structures.
LAD2 - 2:
11:05

Invited High Efficiency Green Lasers for Mobile
Projectors
V. Bhatia, N. Sekiguchi*, M. Hempstead, A. Okada*,
J. M. Grochocinski
Corning, USA*
Corning Int., Japan

Mobile projectors require high efficiency light sources. Our green laser
achieves high efficiency in a compact form with excellent beam quality
and high bandwidth. The infra-red output of a distributed Bragg reflector
laser is coupled into a second harmonic generation device andconverted to green. Efficiencies of 15% are achievable.
LAD2 - 3
11:30

Large Venue Laser-Based Projectors
M. Jansen, S. Brittain, G. Giaretta, J. Green, G. Niven,
C. Stuart, W. Wu
Novalux, USA

High brightness fiber-coupled RGB laser sources offer an expanded
color gamut, lifetimes in excess of 20,000 hours, scalable power (justadd more lasers), reduced cost of ownership (no lamps to replace), as
well as smaller system size and efficiency. We present the basic design
and performance data for a laser-based projection system using
Novalux Necsel lasers.

187

Friday
LAD2 - 4
11:50

December 7
Improved Color Point Stability of High Brightness
LEDs for Projectors
S. Bierhuizen, G. Weijers*
Philips Lumileds Lighting, USA*Philips Lighting, The Netherlands

Present-day commercially available LED arrays used in TV and pocket
projection applications show a large thermal dependency requiring
expensive active color feedback to maintain a stable white point. We
demonstrate that using our novel LED arrays with improved thermal
dependency can result in a much more stable white point, thereby
significantly reducing light loss and need for active color feedback.
LAD2 - 5L
12:10

Long-Life Dual Paraboloid Reflector Lamp System
for Projection Display Applications
K. K. Li, S. Inatsugu
Wavien, USA

The UHP-type of lamps provides the most cost-effective way for highintensity illumination in projection displays. The lifetime of these lamps
had been a disadvantage, but is overcome by the Dual Paraboloid
Reflector lamp system. This article presents the operating principles
and the lifetime extension results using this system.

Author Interviews
18:10 – 19:10

Supporting Organizations:Technical Group on Information Display, ITE
Technical Committee on Electronic Information Displays, Electronics
Society, IEICE
Liquid Crystal Display Forum, JLCSMicro Device Display Consortium (MDDPC)IDW Outstanding
Poster Paper AwardThe 2007 award winners will be announced on the
IDW web site:
http://www.idw.ne.jp/award.html
188

Wednesday

December 5

Workshop on Electronic Paper
Wednesday, December 5
13:20 - 14:30

Mid-sized Hall B

EP1: Electronic Paper (1)Chair:
Co-Chair:EP1 - 1:
13:20

T. Fujisawa, Dainippon Ink & Chems., Japan
H. Arisawa, Fuji Xerox, Japan
Invited A4 BiNem Display with 3.8 Mega-pixels
J. Angelé, M. Elyaakoubi, F. Guignard, S. Jacquier,
S. Joly, P. Martinot-Lagarde, J. Osterman, J. D. Laffitte,
F. Leblanc
Nemoptic, France

An A4 (14.3-inch diagonal) reflective black and white BiNem display
module with 3.8 mega pixels and 200 dpi resolution has beendeveloped. The white reflectance has been improved to 40%. The A4
display has a simple passive matrix structure and has been
manufactured with standard LCD production equipments.
EP1 - 2:
13:45

Invited Polymer Dispersed Liquid Crystal (PDLC) for
Paper-Like Display Application
A. Masutani, T. Roberts, B. Schüller, N. Hollfelder,
F. Pleis, P. Kilickiran, A. Sakaigawa*, G. Nelles,
A. YasudaSony Deutschland, Germany*
Sony, Japan

Dichroic polymer dispersed liquid crystal (D-PDLC) offer a promisingtechnology for future paper-like display. They posses high brightness,because polarizers are not required. This paper summarizes our unique
D-PDLC fabrication method. It first creates a matrix template embeddedwith nano/microparticles which is then back-filled/infiltrated with dye
doped liquid crystal.
EP1 - 3
14:10

Novel Optical Rewritable Electronic Paper
A. Muravsky, A. Murauski, V. Chigrinov, H.-S. Kwok
Hong Kong Univ. of S&T, Hong Kong

We developed new principle of electronic paper that is light printablerewritable matter for 2D or stereoscopic 3D image. It operates by
Optical Rewritable alignment technology, uses bare plastic, polarizers
as substrates. Continuous grey image maintains proper performanceeven when device is bent. Simple construction provides durability andlow cost.
----- Break -----

189

Wednesday

December 5

15:00 - 16:15

Mid-sized Hall B

EP2: Electronic Paper (2)Chair:
Co-Chair:M. Omodani, Tokai Univ., Japan
Y. Toko, Stanley Elec., Japan

EP2 - 1
15:00

The Reflectance Improvement in Cholesteric Liquid
Crystal Microcapsule Cells
N. Hiji, T. Kakinuma, C. Manabe, S. Yamamoto
Fuji Xerox, Japan

Methods for improving the reflectance in cholesteric liquid crystal
microcapsule (CLC-MC) cells were investigated. The reflectanceincreased with the thickness of the CLC-MC layer and reached 55%
exceeding a theoretical limit (=50%) in CLC cells. The effects ofbirefringence and mixing of right-handed and left-handed CLC-MCs
were also investigated.
EP2 - 2
15:20

Full Color A6-Size Photo-Addressable Electronic
Paper
H. Harada, M. Gomyo, Y. Okano, T. Gan, T. Urano,
Y. Yamaguchi, T. Uesaka, H. Arisawa
Fuji Xerox, Japan

Full color photo-addressable electronic paper was developed. The
electronic paper comprised of two stacked photo-address elements.
The A6-size prototype had paper-like features, and showed full-color bistable images instantly written with a viewer-type writing apparatus. The
results suggest a high feasibility of this technology for a color electronic
document viewer.
EP2 - 3
15:40

The Design and Fabricating of Multi-Color Single
Layer Cholesteric Liquid Crystal Display
J. C. Yang, Y. C. Liao, J. W. Shiu, K. L. Lo, S. H. Liu,
Y. P. Chang, H. H. Lee, Y. S. Tsai
ITRI, Taiwan

The cholesteric liquid crystal display possess the bistability and simple
structure that is suitable for e-paper application. A multi-color single
layer cholesteric liquid crystal display is demonstrated by a new
structure design. The colored liquid crystals are filled into the single
layer structure by pixelized vacuum filling. A 10.4 inch display is realized
for verifying the techniques.

190

Wednesday
EP2 - 4L
16:00

December 5
Liquid Crystal Alignment on Random PlanarHomeotropic Patterned Substrates
T. Yazawa, T. N. Oo, M. Kimura, T. Akahane
Nagaoka Univ. of Tech., Japan

Micropatterned alignment of nematic liquid crystals formed by stripes ofalternating random planar and homeotropic anchorings wastheoretically proposed by Qian and Sheng [Phys. Rev. Lett. 77 (1996)4564]. We will present and discuss experimental results of alignment
properties of nematic liquid crystals on this micropatterned surface.
Moreover, we also investigated microscopic switching behavior of a
micropatterned nematic liquid crystal cell.
----- Break -----

16:40 - 18:00

Mid-sized Hall B

EP3: Electronic Paper (3)Chair:
Co-Chair:EP3 - 1:
16:40

T. Kitamura, Chiba Univ., Japan
G. Zhou, Philips Res. Labs., The Netherlands
Invited Cell Structure of Mobile Fine Particle Display
and Migration of Fine Particles in the Cell
T. Takahashi, K. Shimoyama, E. Kagami, S. Saito,
Y. Toko*
Kogakuin Univ., Japan*
Stanley Elec., JapanThe MFPD cell, the display changes because fine particles dispersed in
the nematic LC were moved by applying the electric field. It is found thatthe fine particle migration of MFPD is different depending on the type offine particle. In addition, novel structures of MFPD were proposed.
EP3 - 2
17:05

A Transposed PWM Scheme for Unifiedly Driving aSingle-Layered Colored Cholesteric Liquid Crystal
Display
C.-J. Chen, C.-W. Hsiao, T.-A. Chen, C.-C. Liang,
C.-C. Hsu
ITRI, Taiwan

For reducing the cost of the driving system for a single-layered coloredcholesteric LCD, a transposed PWM scheme is proposed in this paper
to unify the driving voltages for each common (scan) line. Applying the
proposed scheme, it is not necessary to generate different voltages fordifferent colors in each traditional scan line; in spite of different coloredcholesteric LC having different R-V curves. The performances of the
proposed scheme are experimentally evaluated and satisfactorycolored images can be obtained.

191

Wed./Thu.

December 5/6

EP3 - 3
17:25

The Gamut Versus Brightness Trade-Off in Reflective
Displays
T. Bert
Barco, Belgium

Simulations estimate the boundaries of the color gamut of multi-primarycolor displays based on the spectra of light source and light modulating
components (color filters). This will provide a design guideline for
optimization between color gamut and brightness on reflective multiprimary color displays.
EP3 - 4L
17:45

High Performance Reflective PDLC Display with
Prism Array Sheets
H. Nagato, R. Hasegawa, H. Oh-oka, I. Amemiya,
S. Uchikoga
Toshiba, Japan

By using a PDLC cell and two prism array sheets, a bright reflective
display with paper-white appearance has been developed. The
influence of prism apex angle was studied. By optimizing the angle andthe cell gap, the high reflectivity of 53% and the high contrast ratio of 8:1
were achieved, which values are comparable to those of newspaper.

Author Interviews
18:00 – 19:00

Thursday, December 6
9:00 - 10:15

Mid-sized Hall A

EP4: Electronic Paper (4)Chair:
Co-Chair:EP4 - 1:
9:00

S. Maeda, Oji Paper, Japan
A. Suzuki, Ricoh, Japan
Invited Modeling Electrophoretic Paper-Like Displays
M. Müller, G. F. Zhou
Philips Res. Labs., The Netherlands

Electrophoretic displays are the most mature technology for electronic
paper. However, their complex optical behavior with strong history
dependency is still poorly understood and complicates driving. This isdue to the complex interaction between the electrical field, the cavity,
the charged particles and the fluid. In this paper we will discuss ways tosimulate this behavior to improve display performance.

192

Thursday
EP4 - 2:
9:25

December 6
Invited A Flexible Color A4 Size e-Paper Fabricatedon a Thin Metal Foil
J.-K. Lee, C.-D. Kim, I. Kang, I.-J. Chung
LG.Philips LCD, Korea

A 14.1-inch flexible color e-paper was developed using electronic inks
between Thin-Film Transistors (TFT) fabricated on a thin metal foil andColor Filter Array (CFA) coated onto the plastic substrate. The key
technologies for developing this flexible display are described along with
its good display performance.
EP4 - 3:
9:50

Invited Development of Flexible E-Paper and its
Applications
N.-S. Roh
Samsung Elect., Korea

Mobile display requires reflective mode for readability in bright sunlight.
And it should have thin & light, robustness, flexibility. We developed 3
kind of E-Paper suitable for mobile handset, e-book, and color
application. Each E-paper uses suitable technologies such as circuit
integration, precise dimension control, and flexible color filter
fabrication.
----- Lunch -----

13:30 - 16:30

Main Hall C

Poster EPp: Electronic Paper
EPp - 1

Withdrawn

EPp - 2

Formulation of Electronic Ink through the White
Particle with High Electrophoretic Mobility
C. A. Kim, S.-Y. Kang, G. H. Kim, S. D. Ahn, J. Oh,
K. S. Suh
ETRI, Korea

A charge control agent affects the electrophoretic zeta potentials ofwhite particle, which show the maximum value in zeta potential. The
electronic ink panel fabricated with the charged white particles and theblack particles exhibits more than 15:1 contrast ratio at 10V.
EPp - 3

Colored Materials for Electrophoretic Displays
Applications
M. Fontana, M. Lanz, G. de Keyzer, P. Bugnon, M. Hahn,
C. Auschra, K. Mistry, F. Prirrung
Ciba Specialty Chems., Switzerland

No abstract was submitted.

193

Thursday
EPp - 4

December 6
Improvement of Display Characteristics by Particle
Surface Modification in Toner Display
Y. Tanaka, S. Nakamura, N. Miyagawa, T. Kitamura
Chiba Univ., Japan

We studied on the effect of flowability and electric charge of particle on
the display characteristics in a toner display. The surface of tonerparticle was modified with nanosized silica particles by using
hybridization system. The surface modification is effective in improving
the display contrast, threshold voltage.
EPp - 5

Writable Cholesteric Liquid Crystal Display and the
Algorithm Used to Detect Its Image
D.-W. Lee, J.-W. Shiu, Y.-A. Sha, Y.-P. Chang
ITRI, Taiwan

Writable Cholesteric Liquid Crystal Display and the algorithm used todetect its image were developed. We could use any hard tip, ex: the tipof a forefinger, to directly write an image on the surface of CholestericLiquid Crystal Display (CHLCD). By measuring the capacitance of one
pixel of test cell (12mm x 15mm/ 1x1), F-state or P-state could be
detected. By measuring the capacitance of one pixel of 4.1" CHLCD(241um x 241um/ 320x320), F-state or P-state could not be detected,
due to the effect of parasitic capacitance. Therefore, high frequency
measurement and the algorithm were developed to detect the image on
CHLCD.
EPp - 6

A Driver for Modular Passive-Matrix Displays
P. Bauwens, J. Doutreloigne, A. Monté
Ghent Univ., Belgium

A problem with Passive-Matrix Displays is that, depending on the useddisplay-material, only a limited number of lines can be multiplexed. This
limitation can be removed by using a modular display. This display is
divided into smaller modules, each with its driver. This imposes somespecial properties on the drivers.
EPp - 7L

Flexible PDMLC Display for Price Tag with WirelessControl
S.-H. Liu, A.-C. Chen, M. Guh, K.-L. Cheng
ITRI, Taiwan

We have developed the Polymer Dispersed Microencapsulated Liquid
Crystals (PDMLC) and the resulting films can be easily generated via
coating on ITO/PET. Using the PDMLC displays, we have implemented
them into price tags for using an Infrared (IR) remote control, which isregulated under the Infrared Data Association (IrDA).
Author Interviews
18:10 – 19:10
Supporting Organization:
The Imaging Society of Japan
194

Thursday

December 6

Workshop on
MEMS for Future Displays andRelated Electron Devices
Thursday, December 6
9:00 - 9:05

Main Hall B

Opening
Opening Remarks
9:00
M. Nakamoto, Shizuoka Univ., Japan
9:05 - 10:15

Main Hall B

MEMS1: Displays and Imaging (1)Chair:
Co-Chair:W. I. Milne, Univ. of Cambridge, UK
K. Hane, Tohoku Univ., JapanMEMS1 - 1: Invited MEMS Devices as Display
9:05
I. Shimoyama
Univ. of Tokyo, JapanMEMS has powerful tools to create optical devices, especially, ones thathave array configuration. One important feature of MEMS arrays is thatthey can be made tunable by various readily available methods. This
paper demonstrates a varifocal liquid lens and a liquid-based two-DOF
mirror and discusses new types of display.
MEMS1 - 2: Invited Tilt Compensated Laser Projection System for
9:25
Handheld Devices with Motion Compensation and
Input Device Function
H. Grueger, M. Scholles, H. Schenk, H. Lakner
Fraunhofer IPMS, Germany
Miniaturized laser projection systems instead of build in displays may
offer larger images with enhanced resolution for handheld devices. Tilt
compensation using inertial measurement units stabilizes the image
even when the user’s hand is unstable. Furthermore the movement canbe used actively to control software running on the device.

195

Thursday

December 6

MEMS1 - 3
9:45

Two-Dimensional Optical Scanner Having a Trenched
SOI Movable Frame for Electrical Isolation between
Inner and Outer Vertical Comb Actuators
H. Noge, Y. Hagihara, K. Kawano, H. Ueda, T. Yoshihara
Matsushita Elec. Works, Japan

Two-dimensional resonant optical scanners having vertical electrostatic
comb actuators with unique electrical isolation structure have beendeveloped and applied to raster-scanning laser display. Its movable
frame surrounding the gimbal mirror has trenched top silicon layer of
SOI on thick bottom layers. 66.9 Hz resonant frequency of the frame isachieved.
MEMS1 - 4
10:00

Novel Printing Processes for MEMS Fabry-Pérot
Display Pixel
C. Lo, O.-H. Huttunen*, J. Petäjä*, J. Hast*, A. Maaninen*,
H. Kopola*, H. Fujita, H. Toshiyoshi
Univ. of Tokyo, Japan*VTT Tech. Res. Ctr. of Finland, Finland

Roll-to-roll gravure printing and lamination were used for successful
demonstration of MEMS (Micro Electro Mechanical System) FabryPérot display pixel on flexible polyethylene naphthalate (PEN) film. New
spacer structure design also lowered operation voltage for future low
cost mass production.
----- Break -----

10:35 - 12:20

Main Hall B

MEMS2: Displays and Imaging (2)Chair:
Co-Chair:A. I. Akinwande, MIT, USA
H. Grueger, Fraunhofer IPMS, Germany

MEMS2 - 1: Invited High Quality Field Emission Lamps from
10:35
Electron-Emitting Carbon Films with Unique CarbonNano-Structure
A. Hiraki*,**, H. Hiraki*,**, M. Nakamoto***, G. Sato***Kochi Univ. of Tech., Japan**
Dialight Japan, Japan***
Shizuoka Univ., Japan*

We have succeeded to fabricate a world-top-ranking electron-emitterfrom CVD carbon films with unique carbon-nano-structure which wename CNX (Carbon-Nano-eXit). Field Emission Lamp(FEL) using ouremitter and the phosphor developed at Shizuoka University shows great
ability for back-light-units for LCD.

196

Thursday

December 6

MEMS2 - 2: Invited 3-D Diffuser Lithography and Its Application
10:55
to LCD/LED Backlight Unit and Flexible Front-light
Unit
J.-B. Yoon
KAIST, Korea
3-D diffuser lithography which simply introduces an optical diffuser inthe conventional contact lithography was newly developed to fabricate
various 3-D micropatterns which are strongly required in recent
advanced optical components. We successfully applied this techniqueto fabricate high-quality microlens array and in-verse-trapezoidal
micropatterns, which in turn played an important role in highperformance LCD/LED backlight unit and flexible front-light unit.
MEMS2 - 3
11:15

White Color Flat Field Emission Lamps with Newly
Developed High Luminance Green Phosphor
M. Nakamoto, K. Shiratori, G. Sato, H. Kominami,
Y. Nakanishi, H. Hiraki*, M. Haba*
Shizuoka Univ., Japan*
Dialight Japan, Japan

High luminance, and high luminous efficacy white color flat fieldemission lamps have been studied by the usage of newly developed low
acceleration voltage high luminance green color phosphor and nanocarbon field emitters. The FELs can be expected as the first mercuryfree fluorescent lamps to practical use.
MEMS2 - 4
11:30

Triode Carbon Nanotubes Field Emission Display byHighly Precise Thick Film Printing Processes
K.-C. Chen, L.-Y. Jiang, J.-H. Liao, W.-H. Wang,
Y.-J. Shiau, P.-M. Tsai, K.-F. Chen, H.-F. Wei, S.-W. Lai,
L.-H. Chan, M.-H. Lin, Y.-Y. Chang, C.-C. Lee
ITRI, Taiwan

In this work, a cathode structure of carbon nanotubes field emission
display was fabricated by both the screen printing and photolithography
processes. CNT emitters were printed into the dielectric holes after thewhole triode structure was fabricated, in order to prevent dielectricmaterial residues on CNTs. A highly precise printing technology wasdeveloped to print CNTs into our VGA cathodes.
MEMS2 - 5
11:45

Numerical Analysis of Size Effect for Transfer Mold
Field Emitter Arrays
G. Sato, M. Nakamoto
Shizuoka Univ., JapanThe emitter size and density effects for the Transfer Mold field emitter
arrays have been investigated by using a three-dimensional simulation.
Electrons are emitted only from the pyramidal tip apex. The small
emitters with the base length less than 0.4 µm can produce good
uniformity of current density distribution.

197

Thursday

December 6

MEMS2 - 6L
12:00

The New Exposure Method for Acquiring Freer 3-D
Structure by Using Synchrotron Radiation
S. Kajita, M. Horade, S. Khumpuang, S. Sugiyama
Ritsumeikan Univ., Japan

Unlike the conventional exposure method, the new exposure method
was established. The new exposure method is how to operate X-rays
orthopedically and give energy distribution independently in the shapeof a lattice without using a mask pattern. This result was able to find out
the possibility of new X-ray lithography.
MEMS2 - 7L
12:10

Spatial Optical Modulators (SOM) Analysis of Noise
Characteristic for MEMS Projection Display
Applications
J. H. Yu, C. H. Yeo, J. C. Kim, J. H. Lim, D. J. Lee,
H. W. Park*, S. K. Yun*, J. T. Chung, S. W. Hwang,
B. K. Ju
Korea Univ., Korea*Samsung Electro-Mechanics, Korea

A new type of diffractive spatial optical modulators, name SOM, hasbeen developed by Samsung Electro-Mechanics for projection display
and other applications. This paper presents a numerical analysis andexperimental study on noise of the spatial optical modulators package
and its preventing from thermal, Mechanical and electric noise.
----- Lunch -----

13:55 - 15:20

Main Hall B

MEMS3: Emerging MEMS Technologies
Chair:
Co-Chair:

M. Nakamoto, Shizuoka Univ., JapanT. Komoda, Matsushita Elec. Works, Japan

MEMS3 - 1: Invited ZnO Films for Surface Acoustic Wave
13:55
Microfluidic Device
W. I. Milne*, X. Y. Du*, Y. Q. Fu*, S. C. Tan*, J. K. Luo*,**,
S. Pisana*, S. Maeng***, S. H. Kim***, Y. J. Choi***,D. S. Lee***, N. M. Park***, J. Park***, A. C. Ferrari*,
A. J. Flewitt**
Univ. of Cambridge, UK**
Univ. of Bolton, UK***
ETRI, Korea
SAW devices were fabricated on c-axis oriented ZnO films grown on Si
substrates. Effects of film thickness on the film microstructure andacoustic frequencies were studied. Both Rayleigh and Sezawa mode
waves were detected on the devices, and their resonant frequencies
were found to decrease with increase in film thickness.

198

Thursday

December 6

MEMS3 - 2: Invited Recent MEMS Activities at Microsystems
14:15
Technology Laboratories of MIT
A. I. Akinwande
MIT, USAThis presentation will introduce several MEMS/NEMS devices being
developed in the Microsystems Technology Laboratories at MIT that arefocused on scaling laboratory instruments to smaller dimensions. We
will illustrate this trend with three examples that result in the reduction of
power consumption as well as improvements in performance.
MEMS3 - 3
14:35

Liquid Optic Scanner Based on MEMS Technologies
H.-H. Chen*,**, C. S. Chu*, Y. T. Li*, C. Fu***
ITRI, Taiwan**Tsing-Hua Univ., Taiwan

We propose a new idea to fabricate a liquid optic scanner (LOS), whichbase on a SOI (Silicon on Insulate) wafer and MEMS technologies. The
LOS combines two kinds of liquid, silicon oil and DI water. The lighttuning mechanisms are based on electrowetting phenomena.
MEMS3 - 4
14:50

Monolithic Fabrication of GaN/Si Structure for
Optical MEMS
R. Ito, F. R. Hu, M. Wakui, K. Hane
Tohoku Univ., JapanMEMS with a GaN light source are proposed. The direction of lightbeam from the GaN light source can be changed by the stage with the
comb drive actuators. GaN films were deposited on Si substrate by
MBE and a movable stage was fabricated by Si micromachining.
MEMS3 - 5
15:05

Horizontal & Vertical Interlaced Stereoscopic 3-D
TFT-LCD
S. J. Lee, S. K. Kim, M. J. Kim, K. H. Park, W. H. Park*,
J. H. Oh*, D. H. Kang*, B. S. Oh*, K. W. Ahn*, H. J. Kim*,
J. H. Hur*, J. Jang*
Pavonine, Korea*
Kyung Hee Univ., Korea

We have developed a 5.5 inch, stereoscopic 3D display having vertical(480xRGBx640) and horizontal screen (640x480xRGB). This could bedone by inserting the patterned polarizers on both TFT array and color
filter array in TFT-LCD. This is the first 3D display with vertical/horizontal
screen convertible.
----- Break -----

199

Thursday

December 6

15:40 - 16:45

Main Hall B

MEMS4: Optical MEMS Devices
Chair:
Co-Chair:A. Hiraki, Kochi Univ. of Tech., Japan
I. Shimoyama, Univ. of Tokyo, Japan

MEMS4 - 1: Invited Subwavelength Gratings Combined with
15:40
MEMS
K. Hane, J.-S. Ye, Y. Kanamori
Tohoku Univ., Japan
Subwavelength pitchvariable gratings were fabricated from silicon wafer
and the optical characteristics were investigated. Combining with the
MEMS actuator, the pitch and the reflectance of the gratings can bevaried, and thus the color of the grating is modulated. Structural colorsof subwavelength grating and their tunability were discussed.
MEMS4 - 2
16:00

Fabricating of Vertical Thin Film Transistors
Component Using Digital Mirror Device Maskless
Pohotolithography System
W.-K. Hsiao, J.-Y. Jeng
Nat. Taiwan Univ. of S&T, Taiwan

This study used self-developed Digital Micromirror Device (DMD)maskless photolithography system to fabricate vertical thin filmtransistor (VTFT) component. The channel length of this verticalstructure is 90nm, and the gate electrode is fabricated by thesurrounding channel mode. The experimental results proved that due tothe high breadth length ratio of the channel.
MEMS4 - 3
16:15

A Novel Design of Micro-Lens Array on Liquid
Crystal Displays for the Backlight Efficiency
Enhancement
P. C.-P. Chao*, R.-J. Chen*,**, L.-D. Liao*,**, C.-W. Chiu*,**Nat. Cheng Kung Univ., Taiwan**
Chung Yuan Christian Univ., Taiwan*

No abstract was submitted.

SID 2008
International Symposium, Seminar, and Exhibition
May 18–23, 2008
Los Angeles Convention Center
Los Angeles, California, USA
200

Thursday
MEMS4 - 4
16:30

December 6
Design and Fabrication of Silicon Bulk
Micromachined Optical Scanner for Medical
Endoscope
M. Nakada*,**, C. Chong***, K. Isamoto***,A. Morosawa***, H. Fujita*, H. Toshiyoshi*,***Univ. of Tokyo, Japan**
Kanagawa Ac. of S&T, Japan***Santec, Japan

A silicon micromachined electrostatic optical scanner has beendeveloped by using the comb-drive electrostatic mechanism, and a
prototype assembly of miniaturized fiber-optic endoscope wasdeveloped. Energy for electrostatically control the scanner was opticallytransmitted through the single mode fiber, and drive voltage was
generated by the co-located photovoltaic cell.
----- Break -----

17:05 - 18:10

Main Hall B

MEMS5: Fundamental Mechanism, Materials andProcess Technologies
Chair:
Co-Chair:J.-B. Yoon, KAIST, Korea
M. Sasaki, Toyota Tech. Inst., Japan

MEMS5 - 1: Invited Micromirror Using Stretched Thin Film for
17:05
Lower Electrostatic Driving Voltage and Higher
Resonant Frequency
M. Sasaki
Toyota Tech. Inst., JapanThe stretched thin film is applied for decreasing the electrostatic driving
voltage and increasing the resonant frequency of the micromirror. The
thin film torsion bar realizes 7 degrees of mirror rotation at 5V in thesteady condition. The stretched membrane over the drum realizes the
optical flatness reducing the inertia.
MEMS5 - 2
17:25

Growth of Regular Carbon Nanotube Array Using
Micro Contact Printing
N. Y. Song, K. H. Kim, K. S. Kim, J. H. Ryu, C. S. Lee,
B. K. Choo, K. C. Park, J. Jang
Kyung Hee Univ., Korea

We have developed a simple technique for the growth of regular array ofcarbon nanotubes (CNTs) using ink-stamping (IS) process. Pattern for
the nucleation sites was fabricated on Ni/Si substrate by IS process.
The CNTs array with current density of 17 µA/cm2 at 1.5 V/µm can begrown directly on the patterned catalyst surface without diffusion barrier.

201

Thursday
MEMS5 - 3
17:40

December 6
Non-Contact Micro Key Using Novel Capacitive
Sensing Method
M. Ogata, K. Suzuki, H. Funaki
Toshiba, JapanThe authors proposed a proximity sensor employing a novel capacitive
sensing method that functions as a micro-scale key. The capacitance
between minutely patterned electrodes was measured based on theprinciple of superposition of two wave signals. The electrostatic
coupling analysis and experimental results have indicated the possibilityof a non-contact identification system.
MEMS5 - 4
17:55

3-D Wafer-Level Packaging of MEMS Using Surface
Activated Bonding and Through-Si Vias
Y. Takegawa, M. Kamakura, T. Baba, T. Okudo, T. Taura,
R. Tomoida, H. Shiroishi, K. Tone, T. Saijo
Matsushita Elec. Works, Japan

Wafer-level packaging (WLP) is increasingly important for MEMS
devices. We have achieved Au/Au bonding using surface activatedbonding (SAB), and have demonstrated low-resistant 3-D
interconnections using through-Si vias (TSV) by WLP. The resistancesindicate a good uniformity and high yield of Au/Au bonding and TSV.

Author Interviews
18:10 – 19:10

EVENING GET-TOGETHERWITH WINE
Tuesday, December 4
18:00–20:00
Restaurant “Sora”, Sapporo Convention Center(Sponsored by Merck Ltd., Japan)
See page 10 for details
202

Wednesday

December 5

Workshop on
Display Electronic Systems
Wednesday, December 5
13:20 - 13:25

Small Hall

Opening
Opening Remarks
13:20
H. Okumura, Toshiba, Japan
13:25 - 14:45

Small Hall

DES1: High Dynamic Range Display
Chair:
Co-Chair:
DES1 - 1:
13:25

K. Sekiya, Tohoku Univ., Japan
H.-S. Koo, Minghsin Univ. of S&T, Taiwan
Invited Recent Progress on Wide Dynamic Range
Image Sensors
S. SugawaTohoku Univ., Japan

Wide dynamic range image sensor technologies are accomplishing big
evolution in various application fields such as digital-camera, security,
automotive, medical and machine vision. This paper describes review
on recent wide dynamic range image sensors and our new challenge toresolve a trade-off between sensitivity and full well capacity.
DES1 - 2:
13:45

Invited Quantifying Contrast Improvements andPower Savings in Displays with a 2D-Dimming
Backlight
E. H. A. Langendijk, R. Muijs, W. van Beek
Philips Res. Labs., The Netherlands(Local) dimming backlights can improve contrast and power
consumption of LCDs substantially. In fact infinite dynamic contrast and>50% power savings have been claimed. In this paper we quantify theactual contrast gain and power savings as a function of the number ofbacklight segments.

203

Wednesday
DES1 - 3
14:05

December 5
LCD Backlight Selection Through Distortion
Minimization
L. Kerofsky
Sharp Labs. of America, USA

We develop a backlight selection algorithm for an LCD using global
backlight modulation. Distortion is defined between an ideal display,zero black level, and an LCD with finite contrast ratio using backlight
modulation. Minimizing the distortion defines a backlight selection
algorithm. The effect of different error measures is illustrated.
DES1 - 4
14:25

Apply Dynamic Dimming Technology (DDT) with
Distortion Rate Control (DRC) and RGB-Maximum
Trend Collection Determination (RGB-MTCD)
Schema to Save the Power Consumption at Battery
Powered Electronics System
C. L. Wu, K. H. Liu, J. S. Liao, Y. N. Chu, W. T. Tseng,
H. T. Yu
Chunghwa Picture Tubes, Taiwan

Chunghwa Picture Tubes, LTD. (CPT) has successfully implemented
the DDT (Dynamic Dimming Technology) technique into commercial 7
inch TFT-LCD module for portable and battery powered electronics
system. The DDT algorithm we proposed can analyze the image
distribution and control the backlight luminance automatically andadaptively according to the potential value of image content of pervious
frame.
----- Break -----

15:00 - 16:20

Small Hall

DES2: High Quality Image Processing
Chair:
Co-Chair:
DES2 - 1:
15:00

M. Klompenhouwer, Philips Res. Labs., The Netherlands
A. Nagase, Mitsubishi Elec., Japan
Invited Image Super Resolution and Related
Techniques
M. Okutomi
Tokyo Inst. of Tech., Japan

In the presentation, I will talk about our recent researches concerning“image super resolution”, which is the technique for generating a highresolution image from sequential images. I will introduce several
important issues and approaches to solve them, and show many
experimental results we have obtained.

204

Wednesday
DES2 - 2:
15:20

December 5

Invited Advanced Video Processing for Full-HD High
Frame Rate LCD-TV
N. Balram, M. Biswas, V. Namboodiri*, K. Patankar*,S. Garg*, T. Kim
Marvell Semiconductor, USA*Marvell India, India

Motion-blur is a significant problem for Full-HD LCD where the size andresolution makes the impairment of the image very easy to see. Driving
the LCDs at double frame-rate, 100 or 120 Hz, has the potential toremove this issue but it requires very complex processing. In this paper
we will discuss the advanced video processing required for high frame
rate driving of LCD TVs.
DES2 - 3
15:40

Contrast Enhancement Method Using Edge
Information and Saturation Improvement
H. H. Cho, G. H. Park, J. H. Yun, M. R. Choi
Hanyang Univ., Korea

In this paper, a contrast enhancement method using edge informationand saturation improvement is proposed. Histogram equalization withedge information makes higher contrast. Saturation is improved byusing difference between original CDF (Cumulative Distribution
Function) and edge information included CDF. The experimental results
show that the proposed algorithm has higher contrast and more naturallook than the conventional methods.
DES2 - 4
16:00

Dynamic Gamut LED Backlights in LCD-TV
O. Belik, E. H. A. Langendijk, F. Vossen
Philips Res. Labs., The Netherlands

LCDs with colour LED backlights have wide colour gamut that can be
dynamically adjusted to the content, allowing for significant powersavings and higher contrast. In the paper we discuss recently built RGB
and RGBW dynamic gamut displays with RGB LED backlights andprovide backlight power and cost comparison.
----- Break -----

16:30 - 18:10

Small Hall

DES3: Novel Driver Application
Chair:
Co-Chair:N. Suzuki, Nokia Japan, Japan
Y. Kudo, Hitachi, Japan205

Wednesday
DES3 - 1:
16:30

December 5

Invited Novel LCD Driver ICs with Built-In AutomaticControl Functions for Gamma-Curve and Backlight
Power
T. Nose, H. Furihata, H. Hayama
NEC Elect., Japan

We have developed a novel driver IC which can automatically control
backlight brightness and adjust display gamma curves according to the
input image data. By using our proposed driver IC, the backlight power
can be reduced about 30-50% keeping almost the same display image
quality as the original.
DES3 - 2
16:50

A Panel Embedded DC-DC Converter for n-MOS
LTPS-TFT LCDs
N. Mamba, H. Kajiwara, M. Maki*, T. Miyazawa*
Hitachi, Japan*Hitachi Displays, Japan

We have developed a panel-embedded DC-DC converter and a level
shifter by using an n-MOS LTPS-TFT. We adopted a bootstrap capacitor
for the level shifter to allow fast operation, and to achieve high current
output capability, the DC-DC converter contains switches with a selfcutoff function. We applied these technologies to a 2.54-inch VGA+
panel and confirmed its good display quality.
DES3 - 3
17:10

Electrical Characteristics of Driver LSI with 35µm
Thickness for Flexible Display
M. Asakawa, T. Nakashima, T. Saeki, R. Hattroi,
A. Yokoo*, R. Sakurai*, N. Nihei*, Y. Masuda*
Kyushu Univ., Japan*Bridgestone, Korea

The electrical characteristics of the mechanically flexible driver LSI asthin as 35µm to mount directly on a flexible display were precisely
analyzed. The high-voltage transistors on this LSI show the current
decrease less than 13% in high voltage region by a self-heating effect.
Under the bending conditions, the drain current change by
piezoresistive effect was observed.
DES3 - 4
17:30

A Slim Display Using an Advanced COG Technology
A. R. Kim, B. R. Kim, S. K. Son, S. H. Moon, N. D. Kim,
S.-W. Kim*
Samsung Elect., Korea*
Korea Univ., Korea

This paper describes a slim LCD display using A-COG technology
which reduces the thickness of a LCD module by assembling column
drivers on glass directly instead of attaching COF-type ICs. A-COG is a
new architecture which adopts a point-to-point bus topology, a cascade
gamma reference scheme, a cascade power distribution.

206

Wed./Thu.

December 5/6

DES3 - 5
17:50

Micro-AID Processor for OLED Panel
Y. Kobayashi
Kyocera Display Inst., Japan

We have developed a programmable wave generator for OLED Panel.
OLED performances: power consumption and life time, has deep
dependency on its control signals: timing, strength and combination.
The Micro-AID Processor, enables easy wave editing and reproduction,and it become possible to drive an OLED panel with its optimum wave
form.

Author Interviews
18:00 – 19:00

Thursday, December 6
9:00 - 10:20

Small Hall

DES4: Display System Technology
Chair:
Co-Chair:
DES4 - 1:
9:00

H. Okumura, Toshiba, Japan
S. Ono, Matsushita Elec. Ind., Japan
Invited RGW LED Backlighting System for
Monochromatic Medical Imaging LCD Monitor
K. Käläntär, M. Okada
Nippon Leiz, Japan

A backlight employing Red, Green, and Pseudo-white LEDs as lightsources has been developed for monochromatic medical-imaging LCD
monitor, characterized with clear base and blue base at the color
temperatures of 7,500 K and 10,000 K, respectively. The power
consumption of the monitor is about 36 W.
DES4 - 2:
9:20

Invited Mobile Graphics and Display Architecture
RenewalN. Suzuki, J. Ropo*, S. Fujita*, M. Salmela*
Nokia Japan, Japan*
Nokia, Finland

A requirement for mobile displays is drastically changed because ofmobile phone market innovation. The value-added domain for the
display is shifted from its performance metrics to whole handset
enrichment. An ABC and a memory integration application are
discussed as a mobile display architecture renewal toward the newvalue-added domain.

207

Thursday
DES4 - 3
9:40

December 6
A 8ms Delay Image Transmission System and Its
Applications
H. Chen, M. Nakao, M. Miyama*
Eizo Nanao, Japan*Kanazawa Univ., Japan

Based on the real-time prototype proposed on SID2007, We’ve finisheddeveloping a real-time image transmission system. This systemachieved low system delay(8msec) and high image quality for bothdesktop images and motion pictures. In this paper, we explained thewhole system in details. And some possible application fields wereintroduced.
DES4 - 4
10:00

Overlapped RGB Emissions for Reducing Color
Breakup and Motion Blur of Field Sequential Color
LCDs
S. Shimizukawa, T. Shiga, S. Mikoshiba
Univ. of Electro-Commun., Japan

A method is proposed for field sequential color(FSC) LCDs, in whichemission times of R, G, and B backlights partially overlap. This enables
shortening of the total light emission time within a TV field, reducing
color breakup and motion blur. For a sample image, color breakup of theconventional FSC-LCD was reduced to 63%, and motion blur to 61%.
10:40 - 11:40

Mid-sized Hall A

DES5: Late News Papers
Chair:
Co-Chair:Y. Kudo, Hitachi, Japan
H. Sekiya, Tohoku Univ., Japan

DES5 - 1L
10:40

A Real-Time Liquid Crystal Signal Compensation
Method for High Dynamic Range LCD
L.-Y. Liao, F.-C. Lin, Y.-P. Huang, H.-P. Shieh, S.-C. Yeh*Nat. Chiao Tung Univ., Taiwan*AU Optronics, Taiwan

Blur-mask approach was developed to simulate the backlight
distribution of locally-controlled dimming LED backlight with lower
computational complexity which is less than 1% of conventional
convolution method. The blur-mask approach was demonstrated toperform high image quality and high contrast ratio (~20,000：1) on a 37"
LCD-TV. Compared with convolution, blur-mask approach has much
lower computational complexity and successfully demonstrated for realtime applications.

208

Thursday
DES5 - 2L
11:00

December 6
Spatio-Chromatic Color Gamut Mapping for WideColor-Gamut Television
H. Pan, S. Daly
Sharp Labs. of America, USA

Recent emerging wide-color-gamut TVs cause unnatural skin color
rendering due to the stretching of the narrower color gamut of thecontents. The stretching can make noise/artifacts hidden in the contents
visible, and generate contouring artifacts. In this paper, we propose acolor gamut mapping algorithm to address the above issues.
DES5 - 3L
11:20

A Motion-Oblivious Algorithm for Reducing Motion
Blur
A. I. Russell
Texas Instrs., USA

A technique for reducing motion blur, by increasing the frame-rate ofvideo is presented. It is cheaper to implement than motioncompensated techniques since no motion vectors are needed. The
method attempts to temporally localize the sharp components of each
input frame as much as possible, thus reducing perceived motion blur.
13:30 - 16:30

Main Hall C

Poster DESp: Display Electronic Systems
DESp - 1

Dynamic Fuzzy Gamma Control (DFGC) with Color
Correction
C. P. Ku, M. T. Hsu, C. J. Shih, I.-C. Shih, M. S. Wu,
C. F. Su
Chunghwa Picture Tubes, Taiwan“Dynamic Fuzzy Gamma Control with Color Correction” method was
proposed to enhance the image quality. This method utilizes the
dynamic gamma control to increase image contrast. The technology
was successfully implemented in a 7.0" TFT-LCD. As the results, theFuzzy theory could be applied to dynamic gamma control to enhance
the contrast ratio and image quality.
DESp - 2

Modified Overlapped Block Motion Estimation
Algorithm Using the Frame Difference
T. I. Kwak, B. Y. Kim, H. H. Cho, J. H. Yun, S. J. Lee,
M. R. Choi
Hanyang Univ., Korea

In this paper, we propose a modified overlapped block motion
estimation (MOBME) algorithm for a Frame Rate up Conversion (FRC).
Also, the proposed method performs Motion Estimation (ME) based on
the Frame Difference (FD) between two sequential frames adaptively.
We can classify calculated block as two by FD that detects boundary of
motion objects. In experiments, the proposed algorithm shows better
performance and lower complexity than conventional algorithms.

209

Thursday
DESp - 3

December 6
Skin Color Enhancment Using Saturation Extension
K.-O. Yang, H.-H. Cho, J.-H. Yun, B.-H. Hwang,
M.-R. Choi
Hanyang Univ., Korea

In this paper, we propose the skin color enhancement method that isclassified with the skin color detection and the saturation extension
method. The proposed method is focused on a preference color
processing in order to generate better image quality than the method
focused on a uniform one for human vision.
DESp - 4

Efficient Deinterlacing Algorithm Using Directional
Interpolation
T.-W. Hou*, H.-K. Ku*,**, K.-H. Sun*,**, H.-S. Koo***Nat. Cheng Kung Univ., Taiwan**
Fortune Inst. of Tech., Taiwan***Minghsin Univ. of S&T, Taiwan*

We propose a deinterlacing algorithm used for the interpolation ofinterlaced images. Our method efficiently estimate the directional
spatial correlations of neighboring pixels. The results for a variety ofimages and video sequences demonstrate that our proposed algorithm
can accomplish better quantitative and visual quality than the previous
interpolation algorithms.
DESp - 5

Experimental Study for the Generation of High
Resolution Images Using Image Shifts
T. Hashimoto, T. Ikuma, H. Okamura, A. Rövid,Y. Shimodaira
Shizuoka Univ., Japan

We propose the generation method of high resolution images using
shifted images. Our method uses images that are taken with the highprecision small shift. In order to improve the method, the influence ofthe camera noises was considered into the estimation equation.
DESp - 6

A Novel X-Y Channel Dirve Method with Balanced
Channel Current for LED Backlight System of LCD
TV
K. M. Cho, W. S. Oh, D. Y. Cho, G. W. Moon, B. C. Yang*,
T. S. Jang*
KAIST, Korea*Samsung Elect., Korea

A novel X-Y channel driving method for LED backlight system is
proposed. The proposed driving method has these merits such as asingle input voltage source, good power saving effect and balanced
channel current. Simulation and experimental results are demonstrated
to verify the feasibility of the proposed driving method.

210

Thursday
DESp - 7

December 6
Optimized Dimming Algorithm for X-Y Channel
Driving LED Backlight System in LCD TVs
D. Y. Cho, W.-S. Oh, K.-M. Cho, G. W. Moon,
B.-C. Yang*, T.-S. Jang*
KAIST, Korea*Samsung Elect., Korea

This paper proposes a novel RGB-LED backlight system, for 32" LCD
TVs, accompanied by an optimized X-Y Channel driving method. This
proposed driving method is able to reduce power consumption.
Furthermore, the number of LED driver needed in this method, that is
3*(m+n), is much fewer than that of cluster driving method, that is
3*(m*n).
DESp - 8

A 32-in. Field Sequential Color OCB LCD with
Dynamic Backlight Technology
C. C. Tsai, W. C. Tai, C. N. Mo, C. L. Liu
Chunghwa Picture Tubes, Taiwan

In this paper, a 32 color filter-less LCD TV with field sequential color
technology has been designed and analyzed. Dynamic backlightmethod has also been applied in the FSC TV. This TV can offer
luminance of 500 nits and its power consumption is about 12W to 65W.
DESp - 9

Color-Filter Less RGB CCFL Backlight for Color
Field-Sequential LCD
C. P. Su, F. C. Lu, C.-C. J. Chen, W. C. Lin, C. L. Liu
Chunghwa Picture Tubes, Taiwan

Using higher frame rate RGB backlight module with FSC technique issuitable for large-area LCD-TV application. In this method the color-filter
could be replace by red, green and blue color light pattern cooperatingwith adjacent liquid crystal (LC). Now, we develop a prototype 32-inch
RGB CCFL backlight module with FSC.
DESp - 10

A Single-Chip Driver for 2.4-in. Full-Color QVGA
Passive-Matrix OLEDs
Y.-S. Ahn, J.-P. Hong, N.-R. Hong, J.-H. Choi, H.-L. Kim,
H.-K. Jeon, Y.-S. Son, H.-S. Oh, H.-S. Kim*, D.-K. Han
Silicon Works, Korea*LG Elect., Korea

A single-chip driver for 2.4-inch QVGA PMOLED display is presented.
This chip consists of a scan driver, a data driver, a timing generation
circuit, 3(R/G/B) reference current generators, and RGB interface
circuit. The gray level is controlled by PWM of data currents. This chip isfabricated in a 0.35µm 18V CMOS process.

211

Thursday

December 6

DESp - 11

Thermal Estimation Using Adaptive Filtering
Methodology for the Prediction of Case Temperatureof the Components on System Board of TFT-LCD
M. L. Tai
Chunghwa Picture Tubes, Taiwan

The conventional thermal estimation for the case temperature ofcomponents on system board will usually get the over-prediction
results. In this paper, we will propose one optimal thermal estimation
scheme. The simulation results show that the proposed estimation
scheme can get better prediction, and it will overcome the overprediction problems.
DESp - 12

Y-Thin Block Improvement by the TFT-LCD Driving
Signal Adjustment
C. P. Long*, M. Zhang*,**, Z. L. Peng*
Beijing BOE OptoElect. Tech., China**
Graduate Univ. of the Chinese Ac. of Sci., China*

The pixel characteristics in the Y-thin block mura area were measured
such as the gate line voltage Von and Voff. Y-thin block mura is caused
by low gate signal Vgh. Vgh is increased by adjusting the resistors on the
PCB to reduce charging difference between mura area and normal
area.
DESp - 13L

Simulation Design of High Brightness LED-based
Backlight for Liquid Crystal Display in Monitors
H.-S. Koo, C.-C. Peng, M.-C. Lin, E.-M. Liou, J. L. Sie
Minghsin Univ. of S&T, Taiwan

We demonstrate simulation design and optical characteristics of highbrightness LED-based backlight for liquid crystal display in monitors.
Optimization of simulation design in architecture and optical propertiesof high brightness LED-based backlight for liquid crystal display inmonitors have been verified and demonstrated. This novel backlightsystem offers some advantages of high uniformity in light dispersion,,high efficiency in output light, high color gamut in chromatic distribution
and low power consumption in operation.

Author Interviews
18:10 – 19:10

Sponsors:
Technical Group on Consumer Electronics, ITE
Technical Committee on Electronic Information Displays, Electronics
Society, IEICE

212

Wednesday

December 5

Topical Session on Imaging and
Photonic Devices
Wednesday, December 5
13:20 - 16:20

Main Hall C

Poster IPDp: Imaging and Communication Devices
IPDp - 1

Electrochromic Devices Based on Nickel
Oxyhydroxide Thin Film
H. Ueta, Y. Abe, F. Peng, K. Kato, M. Kawamura,
K. Sasaki, H. ItohKitami Inst. of Tech., Japan

Nickel oxyhydroxide (NiOOH) thin films were prepared by reactive
sputtering using an O2 + H2O mixed gas. A reflectance-type all-solidstate EC device with a multilayer structure of Al/WO3/Ta2O5/NiOOH/
indium tin oxide (ITO)/glass was fabricated, and optical density changeof 0.65 was obtained.
IPDp - 2

Near-Infrared Electroluminescence of Thin-Film
Waveguide ZnS:Cr Structures
N. A. Vlasenko, P. F. Oleksenko, M. A. Mukhlyo,
L. I. Veligura, Z. L. Denisova
Nat. AC. of Sci. of Ukraine, Ukraine

Cr2+ emission band narrowing has been first found in ZnS:Cr TFEL
structures when the emission exits through the edge of the structure,
which represent an optical planar waveguide. Narrowing augments withincreasing voltage at the Cr concentration of 5⋅1019 - 5⋅1020 cm-3. The
results indicate that there is the optical amplification of the emission in
the waveguide TFEL structures.
IPDp - 3

Optimal Design of the Photonic Crystal Fiber by
Means of the Genetic Algorithm and ThreeDimensional Finite-Difference Time-Domain Methods
L.-D. Liao, P. C.-P. Chao*, C.-W. Chiu*
Nat. Cheng Kung Univ., Taiwan*Nat. Chiao Tung Univ., Taiwan

No abstract was submitted.

213

Wed./Fri.

December 5/7

IPDp - 4

Self-Holding Optical Blocking Characteristics Using
Smectic Liquid Crystal
S. Noka, Y. Fujii, A. Kakuta*, S. Kobayashi*
Photonic Sci. Tech., Japan*Chitose Inst. of S&T, Japan

Self-holding optical blocking characteristics are discussed using the test
cell filled with the smectic liquid crystal(SLC). Extinction ratio over 30dB
between “on” and “off” states was obtained in the nematic temperature
range less than 2 degrees. Return loss over 40dB was measured withthe optical blocker.

Friday, December 7
9:00 - 9:05

Main Hall A

Opening
Opening Remarks
9:00
S. Kobayashi, Chitose Inst. of S&T, Japan
9:05 - 10:45

Main Hall A

IPD1: Nonlinear Phenomena and Communication
Devices
Chair:
Co-Chair:
IPD1 - 1:
9:05

O. Karthaus, Chitose Inst. of S&T, Japan
K. Sueoka, Hokkaido Univ., Japan
Invited Nonlinear Magneto-Optics and Application for
Magnetic Imaging
Y. Kawabe
Chitose Inst. of S&T, Japan

Nonlinear magneto-optics is the nonlinear optics related to magnetic
characteristics. In magnetic media, time-reversal symmetries and axial
characteristics of physical quantities must be considered in thedescription of nonlinear optical phenomena. In this proceeding, theprinciple of nonlinear magneto-optics and its application to structural
analysis and magnetic imaging are given.
IPD1 - 2
9:25

Study of Supercontinuum Generation with Tapered
Photonic Crystal Fiber
Y. Matsubara, Y. Fujii*, N. Karasawa, S. Kobayashi
Chitose Inst. of S&T, Japan*Photonic Sci. Tech., Japan

Super-continuum light with broadband spectrum was generated byfemto second pulse injection into the microstructure fiber such as aphotonic crystal fiber. In this study, we generated super-continuum lightby injecting Ti-Sa laser pulses with 100fs width and 1kHz repetition rate
at 795nm into the tapered PCFs.
214

Friday

December 7

IPD1 - 3
9:45

Optical Properties of Polysilane Optical Waveguides
on Photobleaching Technology
T. Suda, H. Tsushima*, S. Kobayashi**
Photonic Sci. Tech., Japan*Nippon Paint, Japan**
Chitose Inst. of S&T, Japan

Polysilane optical waveguide splitters and Bragg grating filters are
discussed. The loss of 1x8 splitter with UV lamp was less than 11.0dB,
the loss of 1x4 splitter by the UV laser direct drawing was less than
9.0dB and the Bragg grating reflected signal bandwidth was 0.4nm
measured at 1550nm.
IPD1 - 4
10:05

Waveguide Structure Effect for the C- and L-Band of
Optical Directional Full Couplers
C.-F. Chen, Y.-S. Ku
Nat. Central Univ., Taiwan

The waveguide structure effect for the C- and L-band of opticaldirectional full couplers weighted by Hamming function are numericallyinvestigated. In the condition of -35 dB crosstalk, it is found that the
coupler lengths for C-, L-, and C+L-band are 3.0, 2.6, and 3.6 mm,
respectively. Obviously, such couplers have an advantage overconventional couplers for the demand of the suitable coupler length.
IPD1 - 5
10:25

A Novel Smectic Liquid Crystal Optical Attenuator for
Optical Telecommunication
A. Kakuta, T. Ikeo, K. Fushimi, K. Hasuda*, S. Noka**,
S. Kobayashi
Chitose Inst. of S&T, Japan*
Renesas Northern Japan Semiconductor, Japan**Photonic Sci. Tech., Japan

A variable optical transmittance modulator using smectic liquid crystals
was fabricated for application in a novel variable optical attenuator fortelecommunications. New composites with a wide smectic temperature
range were developed to fulfill practical thermal criteria. The device
exhibited promising properties, such as a latching capability andexcellent extinction ratios.
----- Break -----

11:00 - 12:20

Main Hall A

IPD2: New Imaging and Other Topics
Chair:
Co-Chair:S. Kobayashi, Chitose Inst. of S&T, Japan
Y. Abe, Kitami Inst. of Tech., Japan215

Friday
IPD2 - 1
11:00

December 7
Organic Nano- and Microstructures by a Simple
Solvent Evaporation Process
O. Karthaus, Y. Hashimoto, T. Kabuto, K. Kai, K. Kon,
S. Nagata, K. Tanaka, Y. Tsuriga, M. Wada
Chitose Inst. of S&T, Japan

A simple solution casting process is introduced allowing for nonlithographic micropatterning of functional low-molar-mass andpolymeric materials. During solution evaporation, self-organizedstructures build up at the solution edge that result in the formation
submicrometer-sized dot and stripe patterns. Pattern dimensions canbe controlled by concentration, temperature and evaporation speed.
IPD2 - 2
11:20

Long-Wavelength Laser Pulses for Water-Surface
Ranging
A. Okubo, Y. Yamabayashi
Chitose Inst. of S&T, Japan

Optical absorption spectrum 1.5 µm wavelength range showed greaterloss of 13dB/cm than visible light. Ranging the bottom of water insteadof the surface can be avoided by using laser within this wavelength
range. An OTDR equipment at 1.55 µm was used to range a 4.6 m
distant water-surface, successfully.
IPD2 - 3
11:40

Liquid Crystal Lens in Imaging System
M. Ye, B. Wang*, S. Yanase, S. Sato
Akita Pref. R&D Ctr., Japan*Akita Univ., Japan

Liquid crystal (LC) lens used as an imaging device is reported. The
optical properties of the LC lens are discussed. The LC lens together
with a glass lens forms an imaging system, and it plays the role offocusing. Very sharp color images are obtained.
IPD2 - 4
12:00

Variations of Spatial-Angular Apodization Caused by
the Failure Modes of LED
C. R. Ou, B.-Y. Huang, J.-M. Lee
Hsuiping Inst. of Tech., Taiwan

Failure modes of LED dies will degrade the source performance andleads to the non-uniformity in optical system. This report classified thefailure modes into three geometric types, and the apodization effect foreach mode is discussed.

216

Friday
IPD2 - 5L

December 7
Withdrawn

Author Interviews
18:10 – 19:10

BANQUET
Wednesday, December 5
19:30–21:30
Palace Ballroom (3F)
Sheraton Sapporo HotelSee page 10 for details

Fujioka Collection
The world most complete private CRT history
collection, including World first Color CRT,World first Trinitron, Early Camera Tube,
Early Color and Black & White Televisions,will be demonstrated with live picture at Exhibition.
Main Hall C
Sapporo Convention Center

IDRC ’08
November 3-6, 2008
Orlando, FL, U.S.A
217

IDW ’07 COMMITTEESORGANIZING COMMITTEE
General Chair:
Standing (ITE):
Standing (SID):
Committee (ITE):
Committee (Executive Chair):Committee (Program Chair):Y. Nagae
I. Kumazawa
N. Ibaraki
T. Kurita
T. Sugawara
H. Seki

Hitachi Displays
Tokyo Inst. of Tech.
Toshiba Matsushita Display Tech.
NHK
Hachinohe Inst. of Tech.

OVERSEAS ADVISORS
P. J. Bos
H. Y. Chen
M.-K. Han
I. Heynderickx
W. E. Howard
J. Jang
H.-S. Kwok
A. C. Lowe
E. Lueder
F.-C. LuoM. H. Oh
J.-N. Perbet
I. C. Sage
K. R. Sarma
D. Theis
H. Tolner
B. P. Wang
L. F. Weber
K.-W. Whang

Kent State Univ., USA
Chunghwa Picture Tubes, Taiwan
Seoul Nat. Univ., Korea
Philips Res. Labs., The Netherlands
Howard Consulting, USA
Kyung Hee Univ., Korea
Hong Kong Univ. of S&T, Hong Kong
Lambent Consultancy, UK
Univ. of Stuttgart, USA
AU Optronics, Taiwan
Dankook Univ., Korea
THALES AVIONICS, France
QinetiQ, UK
Honeywell International, USA
Siemens, Germany
PDP Consultant, The Netherlands
Southeast Univ., China
USA
Seoul Nat. Univ., Korea

FINANCIAL SUPPORTING COMMITTEE
Chair:
Vice-Chair:Y. Shimodaira
Y. Nagae

Shizuoka Univ.
Hitachi Displays

EXECUTIVE COMMITTEE
Executive Chair:
Executive Vice-Chair:T. Sugawara
M. Uchidoi
T. Shiga
Program Chair:
H. Seki
Program Vice-Chair:
T. Miyashita
H. Mori
Program Secretary:
R. Hattori
K. Ishii
Y. Yamamoto
S. Uchikoga
N. Wakita
Publication Chair:
M. Suzuki
Publication Vice-Chair: M. Date
Publication:
K. HaraK. Takatori
Treasurer:
T. Komaki
Treasurer-Elec.:
H. Sakurai
General Secretary:
T. Suzuki
General Secretary-Elec.: T. Katoh
Local Arrangement Chair: T. Mishima
Local Arrangement:
K. Sueoka
Exhibition Chair:
S. Kobayashi
Exhibition Vice-Chair:
A. Kakuta
218

Pioneer
Univ. of Electro-Commun.
Hachinohe Inst. of Tech.
Tohoku Univ.
FUJIFILM
Kyushu Univ.
NHK
Sharp
ToshibaMatsushita Elec. Ind.
Merck
NTT
Shizuoka Univ.
NEC LCD Techs.
Pioneer
Asahi Glass
ZEON
ZEON
Hokkaido Univ.
Hokkaido Univ.
Chitose Inst. of S&T
Chitose Inst. of S&T

Exhibition:
Senior Member:

S. Matsuyama
Y. Shimodaira
K. Nunomura
Y. Iimura
Senior Executive Member: H. Uchiike
Committee:
LCT WS
M. Kimura
AMD WSK. Azuma
FMC WS
Y. Fujimoto
CRT WS
S. Shirai
PDP WS
H. Kajiyama
PH WS
T. Hisamune
FED WSN. Egami
OLED WS
S. Naka
3D WS
S. YanoVHF WS
J. Someya
LAD WS
M. Takaso
EP WS
H. Arisawa
MEMS WS
T. Komoda
DES WS
Y. Kudo
IPD TS
K. Sueoka
Members:
H. AraiT. Itoh
Y. Ishii
S. Itoh
H. Inoue
M. Inoue
S. UemuraY. Ukai
T. Ushiki
T. Uchida
M. Ohsawa
H. Ohnishi
T. Ohnishi
S. Okabayashi
M. Inoue
T. Hisamune
S. Kaneko
M. KanoH. Kawakami
K. Kobayashi
S. Kobayashi
H. Kobayashi
Y. Komiya
T. Saito
S. Sakamoto
A. Sasaki
F. SatoT. Shinoda
H. Kanayama
S. Shiwa
K. Suzuki
M. Sumitomo
Y. Takiguchi
T. Taguchi
K. Takeuchi
Y. Takeuchi

Hitachi Displays
Shizuoka Univ.
PioneerTokyo Univ. of A&T
JSR
ALTEDEC
Dainippon Screen
Hitachi Displays
Hiroshima Univ.
Kasei Optonix
NHK
Univ. of Toyama
NHK
Mitsubishi Elec.
Techno Syss. Res.
Fuji Xerox
Matsushita Elec. Works
Hitachi
Hokkaido Univ.
Corning Japan
Sharp
Futaba
Hitachi High-Tech.
Toyo
NoritakeSony
Seiko Epson
Tohoku Univ.
HitachiEhime Univ.
Sumitomo Chem.
Meijyo Univ.
Mitsubishi Elec.
Kasei Optonix
NEC LCD Techs.
Alps Elec.
ALTEDEC
Mitsubishi Elec.
Tokyo Univ. of Sci.
Yamaguchi
OlympusTokyo Cathode Lab.
Noritake Kizai
Osaka Electro-Commun. Univ.
NHK
Shinoda Plasma/
Hiroshima Univ.
Sanyo Elec.
Tokyo Denki Univ.
SED
NichiaRicoh
Toppan Printing
Dainippon Ink & Chem.
ICMR
219

K. Nakazawa
C. Tani
K. Dantani
Y. Tsuchiya
M. Tsumura
Y. TokoT. Nagatsuka
Y. Nishimura
K. Niwa
Y. Hirai
K. Fukuoka
H. Fukuro
S. Hoshino
S. Hotta
H. Hori
M. Maeda
K. Matsuhiro
A. Mikami
S. Mikoshiba
H. Mimura
M. Koden
H. Murakami
S. Yamamoto
M. YukiM. Yokozawa
H. Yokoyama
K. Uchikawa
Y. Yanagi

NTT
ASTRODESIGN
Dai Nippon Printing
NHK
Hitachi
Stanley Elec.
Nitto Denko
AKT
JSR
Optrex
Idemitsu Kosan
Nissan Chem. Ind.
Konica Minolta Sensing
Matsushita Elec. Ind.
Arisawa Manufacturing
Kanazawa Inst. of Tech.
Univ. of Electro-Commun.
Shizuoka Univ.
Sharp
Dai Nippon Printing
Seiko Instrs.
Asahi Glass
Tokyo Univ. of Info. Sci.
Nat. Inst. of Advanced Ind. S&T
Tokyo Ohka Kogyo
Mitsubishi Heavy Ind.

Workshop/Topical Session Chair:
LCT WS
AMD WS
FMC WS
CRT WSPDP WSPH WS
FED WS
OLED WS
3D WS
VHF WS
LAD WSEP WS
MEMS WS
DES WS
IPD TS

H. Fujikake
M. KimuraY. Ukai
H.-Y. Chen
K. Nunomura
Y. Nakanishi
M. TakaiY. SatoI. Yuyama
Y. Shimodaira
Z. Tajima
M. Omodani
M. Nakamoto
H. Okumura
S. Kobayashi

NHK
Ryukoku Univ.
Sony
Chunghwa Picture Tubes
Pioneer
Shizuoka Univ.
Osaka Univ.
JST
Utsunomiya Univ.
Shizuoka Univ.
Mobara Atecs
Tokai Univ.
Shizuoka Univ.
Toshiba
Chitose Inst. of S&T

PROGRAM COMMITTEE
Program Chair:
Program Vice-Chair:
Program Secretary:

Committee:
LCT WS
AMD WS
FMC WS
CRT WS
220

H. SekiT. Miyashita
H. Mori
R. Hattori
K. Ishii
Y. Yamamoto
S. Uchikoga
N. Wakita

Hachinohe Inst. of Tech.
Tohoku Univ.
FUJIFILM
Kyushu Univ.
NHK
Sharp
ToshibaMatsushita Elec. Ind.

T. NoseK. Takatori
T. Nagahara
T. Saito

Akita Pref. Univ.
NEC LCD Techs.
AZ Elec. Materials
Tokyo Cathode Lab.

PDP WS
PH WS
FED WS
OLED WS
3D WS
VHF WS
LAD WSEP WS
MEMS WS
DES WS
IPD TS

H. OakuN. Miura
H. Mimura
T. Inoue
M. Hashimoto
N. Hiruma
T. Hayashi
Y. Toko
S. Uchikoga
K. Sekiya
T. Mishima

HitachiMeiji Univ.
Shizuoka Univ.
TDK
NTT Data
NHK
3M, Asia PacificStanley Elec.
Toshiba
Tohoku Univ.
Hokkaido Univ.

Workshop on LC Science and Technologies
Workshop Chair:
Program Chair:
Program Vice-Chair:
General Secretary:
Program Committee:

H. Fujikake
T. NoseM. Suzuki
S. Komura
M. KimuraO. Okumura
M. Ozaki
H. Okada
K. Miyachi
K. Ishikawa
R. Yamaguchi
M. Funahashi
M. Kimura
M. Inoue
T. Ishinabe
H. Wakemoto
T. Takahashi
A. Fujita

NHK
Akita Pref. Univ.
Merck
Hitachi Displays
JSR
Epson Imaging Devices
Osaka Univ.
Univ. of Toyama
Sharp
Tokyo Inst. of Tech.
Akita Univ.
Univ. of Tokyo
Nagaoka Univ. of Tech.
Toyo
Tohoku Univ.
Toshiba Matsushita
Display Tech.
Kogakuin Univ.
Chisso Petrochem.

Workshop on Active Matrix Displays
Workshop Chair:
Program Chair:
General Secretary:
Program Vice-Chair:
Program Committee:

M. Kimura
K. Takatori
K. Azuma
Y. Fujisaki
Y. Yamamoto
S. Utsunomiya
M. Inoue
H. HamadaS. Horita
N. Matsuo
T. Noguchi
S. Hirota
S. Uchikoga
M. Hiramatsu
K. NomotoRyukoku Univ.
NEC LCD Techs.
ALTEDECNHK
Sharp
Seiko Epson
TPO Displays Japan
Sanyo Elect.
JAIST
Univ. of Hyogo
Univ. of the Ryukyus
HitachiToshiba
Toshiba Matsushita
Display Tech.
Sony

Workshop on FPD Manufacturing, Materials and Components
Workshop Chair:
Y. Ukai
Program Chair:
T. Nagahara
General Secretary:
Y. Fujimoto
Vice-General Secretary: K. Niwa
Program Committee:
K. OdaD. AokiT. Unate
Y. FujimuraSony
AZ Elec. Materials
Dainippon Screen
JSR
Dai Nippon Printing
Dai Nippon Printing
Sekisui Chem.
Nitto Denko
221

N. Miyatake
K. Uchikawa
H. MoriY. Saitoh
T. ItohY. IimuraT. Tomono
T. Hayashi
F. Shimo
K. Shimamura
K. Käläntär
M. Shinohara
S. Asari
M. Kimura
K. Miyazawa
K. Fujishiro
T. Takeda
J. S. Yu
C. C. Lee

Mitsui Engineering &Shipbuilding
Tokyo Ohka Kogyo
FUJIFILM
FUJIFILM
Corning
Tokyo Univ. of A & T
Toppan Printing
3M, Asia PacificTokyo Electron
Mitsui Engineering &Shipbuilding
Nippon Leiz
Omron
ULVAC
JSR
Chisso Petrochem.
Nippon Steel chem.
Nagase ChemteX
LG Chem.
ITRI

Workshop on CRTs
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

H.-Y. Chen
T. Saito
S. Shirai
H. Nakanishi
Y. WadaT. Sugawara
H. KumeJ. Henrichs
K. SonC. C. Chao
M. BaeChunghwa Picture Tubes
Tokyo Cathode Lab.
Hitachi Displays
MT Picture Display Co.,Ltd
LP Displays
LP Displays
Chunghwa Picture Tubes
Samsung SDI

Workshop on Plasma Displays
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

K. Nunomura
H. Oaku
H. Kajiyama
N. Oota
R. Murai
T. Shinoda
Y. Nakao
S. Mikoshiba
K. Igarashi
M. Uchidoi
Y. Murakami
S. Sakamoto
Y. Hashimoto

Pioneer
Hitachi
Hiroshima Univ.
DAP Tech.
Matsushita Elec. Ind.
Shinoda Plasma/Hiroshima Univ.
Asahi Glass
Univ. of Electro-Commun.
Univ. of Electro-Commun.
PioneerNHK
Noritake Kizai
HitachiWorkshop on EL Displays and Phosphors
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

222

Y. Nakanishi
N. Miura
T. Hisamune
H. Yamamoto
H. Kobayashi
M. Shiiki
K. Kondo
T. Minami
S. ItohShizuoka Univ.
Meiji Univ.
Kasei Optonix
Tokyo Univ. of Tech.
Tottori Univ.
Hitachi
Stanley
Kanazawa Inst. of Tech.
FutabaK. Ohmi
S. Okamoto
M. Sumitomo
M. Katayama
N. Matsuda
M. Niboshi
K. Wani

Tottori Univ.
NHK
Nichia Chem. Ind.
Denso
Toshiba
Sharp
iFire Tech.

Workshop on Field Emission Display
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

M. Takai
H. MimuraN. Egami
J. Ishikawa
T. Asano
M. Nakamoto
Y. Iguchi
S. Okuda
M. Suzuki
S. Uemura
J.-M. Kim

Osaka Univ.
Shizuoka Univ.
NHK
Kyoto Univ.
Kyushu Univ.
Shizuoka Univ.
FE Tech.
Mitsubishi Elec.
Hitachi
Noritake
Samsung AITWorkshop on Organic LED Displays
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

Y. SatoT. Inoue
S. Naka
C. Adachi
Y. Fukuda
K. Fukuoka
R. Hattori
J. KidoY. Kijima
H. Kobayashi
A. Mikami
H. Miyazaki
K. Nakayama
S. Tokito
T. Tsutsui
T. Wakimoto

JST
TDK
Univ. of Toyama
Kyushu Univ.
Pioneer
Idemitsu Kosan
Kyushu Univ.
Yamagata Univ.
Sony
Seiko Epson
Kanazawa Inst. of Tech.
Nippon Steel chem.
Yamagata Univ.
NHK
Kyushu Univ.
Merck

Workshop on 3D/Hyper-Realistic Displays and Systems
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

I. Yuyama
M. Hashimoto
S. YanoK. Mashitani
Y. Komiya
T. Fujii
C.-H. Tsai
T. Mishina
N. Nishida
S. Ohtsuka
J.-Y. Son
H. Takemura
T. Yoshida

Utsunomiya Univ.
NTT Data
NHK
Sanyo Elec.
Olympus
Nagoya Univ.
ITRI
NiCT
Univ. of Tokushima
Kagoshima Univ.
Daegu Univ.
Osaka Univ.
Toppan Printing

Workshop on Applied Vision and Human Factors
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

Y. Shimodaira
N. Hiruma
J. Someya
H. Isono
T. Tamura
T. Kurita

Shizuoka Univ.
NHK
Mitsubishi Elec.
Nippon Inst. of Tech.
Tokyo Polytech. Univ
NHK223

J. Bergquist
S. Clippingdale
M. Idesawa
S. Kubota
T. Mitsuhashi
T. WakeR. Yoshitake
T. Matsumoto

Nokia JapanNHK
Univ. of Electro-Comm.
Seikei Univ.
Shobi Univ.
Chukyo Univ.
IBM Japan
Sony

Workshop on Projection and Large-Area Displays,
and Their Components
Workshop Chair:
Program Chair:
Program Vice-Chair:
General Secretary:
Program Committee:

Z. Tajima
T. Hayashi
H. Kikuchi
S. Shikama
M. Takaso
Y. Hayashi
S. Koike
T. Yoshida
H. NakanoT. Ogura
K. Ohara
S. OuchiT. Suzuki
K. Takeda
H. Kanayama
Y. Asakura
Y. Masumoto
T. Habu

Mobara Atecs
3M, Asia PacificNHK
Mitsubishi Elec.
Techno Syss. Res.
Sony
Seiko Epson
Toppan Printing
Barco
Matsushita Elec. Ind.
Texas Instrs. Japan
Hitachi
Victor Company of Japan
Seiko Epson
Sanyo Elec.
Nittoh Kogaku
Matsushita Elec. Ind.
UshioWorkshop on Electronic Paper
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

M. Omodani
Y. Toko
H. Arisawa
A. Suzuki
S. Maeda
Y. Hotta
T. Fujisawa
H. KawaiG. F. Zhou

Tokai Univ.
Stanley Elec.
Fuji Xerox
Ricoh
Oji Paper
Ricoh
Dainippon Ink & Chem.
Seiko Epson
Philips Res. Labs.

Workshop on MEMS for Future Displays
and Related Electron Devices
Workshop Chair:
Program Chair:
General Secretary:
Program Committee:

224

M. Nakamoto
S. Uchikoga
T. Komoda
H. Fujita
M. Esashi
S. Sugiyama
H. Kikuchi
Y. Yoshida
K. Matsumoto
T. Ooasa
H. L. Tuller
G. Barbastathis
T. Akinwande
W. I. Milne
J. Jang
J. M. Kim

Shizuoka Univ.
ToshibaMatsushita Elec. Works
Univ. of Tokyo
Tohoku Univ.
Ritsumeikan Univ.
NHK
Mitsubishi Elec.
OlympusTokyo Electron
MIT
MIT
MIT
Cambridge Univ.
Kyung Hee Univ.
Samsung

Workshop on Display Electronic Systems
Workshop Chair:
Program Chair:
General Secretary:
Vice Program Chair:
Program Committee:

H. Okumura
K. Sekiya
Y. KudoK. Käläntär
A. Nagase
N. Suzuki
T. Yamamoto
K. Takeuchi
O.-K. Kwon
H.-S. Koo

Toshiba
Tohoku Univ.
HitachiNippon Leiz
Mitsubishi Elec.
Nokia JapanNHK
Univ. of Electro-Commun.
Hanyang Univ.
Minghsin Univ.
of S&T
M. A. Klompenhouwer Philips Res. Labs.
T. KimMarvell Semiconductor
H. Sasaki
Toshiba

Topical Session on Imaging and Photonic Devices
Session Chair:
Program Chair:
General Secretary:
Program Committee:

S. Kobayashi
T. Mishima
K. Sueoka
A. Kakuta

Chitose Inst. of S&T
Hokkaido Univ.
Hokkaido Univ.
Chitose Inst. of S&T

FINANCIAL SUPPORTING ORGANIZATIONS(as of October 31, 2007)
ADEKA CORPORATIONASAHI GLASS CO., LTD.
AZ Electronic Materials (Japan) K.K.
CASIO COMPUTER CO., LTD.
Chisso Corporation
Corning Japan K.K.
Dai Nippon Printing Co., Ltd.
EIZO NANAO CORPORATION
FUJIFILM Corporation
Futaba Corporation
Hitachi, Ltd.
Hitachi Displays, Ltd.
JSR Corporation
KASEI OPTONIX, LTD.
Matsushita Electric Industrial Co., Ltd.
Merck Ltd., Japan
MITSUBISHI ELECTRIC CORPORATION LCD DIVISIONMITSUI ENGINEERING & SHIPBUILDING CO., LTD.
NEC LCD Technologies, Ltd.
NICHIA CORPORATIONNORITAKE ITRON CORPORATIONNTT IT CORPORATIONOTSUKA ELECTRONICS CO., LTD.
PIONEER CORPORATIONSED Inc.
Seiko Instruments Inc.
SEMI JapanSHARP CORPORATION
Sony Corporation
Sumitomo Chemical Co., Ltd. Tsukuba Research Laboratory
TOKYO CATHODE LABORATORY CO., LTD.
TOKYO OHKA KOGYO CO., LTD.
TOPPAN PRINTING CO., LTD.
225

TOSHIBA CORPORATION
Toshiba Matsushita Display Technology Co., Ltd.
TOYO Corporation
Ube Material Industries, Ltd.
ULVAC, Inc.
ZEON CORPORATION

IDW ’07 SECRETARIAT
c/o ABEISM CORPORATION
4-30-12 Kamimeguro, Meguro-ku
Tokyo 153-8571, Japan

List of Exhibitors (as of October 31, 2007)
ASTRODESIGN, Inc.
Electronic Devices Lab., University of Toyama
Field Emission Technologies, Inc.
FURUYA METAL CO., LTD.
Grand Seiko Co., Ltd.
HORIBA, Ltd.
Jedat Inc.
Keisoku Giken Co., Ltd.
Kitami Institute of Technology
Kitamura Lab., Chiba University
KONICA MINOLTA SENSING, INC.
MEIRYO TECHNICA CORPORATION
Mutsu Lab./Ryukoku Extension Center, Ryukoku University
MATSUBO Corporation
Nakamoto Lab., Research Institute of Electronics, Shizuoka University
NIPPON FILCON Co., Ltd.
Nissho Electronics Co.
Omodani Lab., Tokai University
OPTO DESIGN, INC.
OPTO SCIENCE, INC.
OTSUKA ELECTRONICS CO., LTD.
Photonics World Consortium
RSoft Design Group Japan K.K.
Ritsumeikan University
Saito Lab., Nagoya University
SANAYI System Co., Ltd.
SHIMADZU CORPORATIONSHINTECH, Inc.
SILVACO Japan Co., Ltd.
TIPs Lab., The University of Tokushima
Toray Research Center, Inc.
TOYO Corporation
University of Hyogo
Xilinx Japan, Co.
Yamaguchi Industrial Promotion Foundation
ZEON CORPORATION

226

227

ShuttleBus Stop

1F

BUS

South
Entrance

B

Main Hall

Conference
Hall

Registration

Cloak
Cloak

A

Mid-sized
Hall
A
B

101

102

106

104 105

108

Evening
Get-together

Restaurant SORA

PosterFLOOR PLAN

107

Secretariat

103

Keynote and Invited Addresses

C

Exhibition, Poster andAuthor Interviews

228

2F

Small Hall
205
205

201

202

203
203

204

207

206

Wednesday, December 5
19:30–21:30
Palace Ballroom (3F)
Sheraton Sapporo HotelSee page 10 for details

IDW Best Paper Award

Registration
17:30-20:00

Main Hall B

Mid-sized Hall A

Mid-sized Hall B

Small Hall

Room 107, 108

Main Hall C

Evening Get-Together at Restaurant “Sora”
18:00-20:00

Break

Registration
8:30-18:00

LCT1
13:20-14:45

AMD1
13:20-14:35

FMC1
13:20-14:40

LCT2
15:00-16:25

AMD2
15:00-16:20

FMC2
15:00-16:20

LCT3
16:40-18:00

AMD3
16:30-18:00

FMC3
16:40-18:00

Lunch
OLED1
13:20-14:30
Break
OLED2
14:50-16:20
Break
OLED3
16:30-18:00

EP1
13:20-14:30

DES1
13:20-14:45

EP2
15:00-16:15

DES2
15:00-16:20

EP3
16:40-18:00

DES3
16:30-18:10

CRTp
PDPp1, IPDp
13:20-16:20

Exhibition
13:00-17:00

Thursday, December 6

Author Interviews
18:00-19:00

LCT6
15:10-16:35

AMD7
15:10-16:35

LCT7
16:45-18:10

AMD8
16:45-18:10

Break
Banquet in Sheraton Sapporo Hotel
19:30-21:30
MEMS1
EP4
VHF1
9:00-10:15
9:00-10:15
9:00-10:40
Break
MEMS2
DES5
VHF2
10:35-12:20
10:40-11:40
11:00-12:10
Lunch
MEMS3
PDP1
PH1
13:55-15:20
13:30-14:50
13:30-14:50
Break
MEMS4
PDP2
PH2
15:40-16:45
15:10-16:40
15:10-16:30
Break
MEMS5
PDP3
3D1
17:05-18:10
16:50-18:10
16:50-18:05

LAD1
9:00-10:20

IPD1
9:00-10:45

FMC4
9:00-10:00

LAD2
10:40-12:30

IPD2
11:00-12:20

FMC5
10:40-12:15

AMD9
13:30-14:55

FMC6
13:30-14:50

LCT8
15:10-16:35

PDP4
15:10-16:30

FMC7
15:10-16:30

LCT9
16:50-17:50

PDP5
16:50-18:10

FMC8
16:50-17:50

LCT4
9:00-10:10

AMD4/OLED4
9:00-10:30

LCT5
10:40-12:05

AMD5
10:50-12:10
AMD6
13:30-14:55

Registration
8:30-18:00

DES4
9:00-10:20
CRT1
10:40-12:00

FMCp
9:00-12:00

PDPp2, PHp
9:00-12:00
Exhibition
9:00-17:00

CRT2
13:30-14:40

OLEDp, 3Dp,
VHFp, LADp,
EPp, DESp,
13:30-16:30

CRT3
15:10-16:20
CRT4
16:30-18:00

Author Interviews
18:10-19:10

Friday, December 7

The 2007 award winners will be announced on
the IDW web site:
http://www.idw.ne.jp/award.html

Main Hall A

InvitedAddress
10:40-11:50

This new award will go to the most outstanding
paper selected from those presented at IDW ’07.
The 2007 award winners will be announced on
the IDW web site:
http://www.idw.ne.jp/award.html

IDW Outstanding
Poster Paper Award

Conference Hall

Opening,
Keynote9:00-10:30

Wednesday, December 5

BANQUET

Lobby

Tues.,
Dec. 4

IDW ’07 Timetable
Date

Registration
8:30-15:00

Break
VHF3
10:40-12:10
Lunch
VHF4
13:30-14:55
Break
VHF5
15:10-16:30
Break
VHF6
16:50-17:45

PH3
9:00-10:10

FED1
9:00-10:20

PH4
10:40-12:10

FED2
10:40-12:30

3D2
13:30-15:00

FED3
13:30-14:50

3D3
15:10-16:20

FED4
15:10-16:30

3D4
16:50-18:10

FED5
16:50-17:10

AMDp
9:00-12:00

LCTp
9:00-12:00

Exhibition
9:00-14:00

Author Interviews
18:10-19:10

IDW ’07 Session Navigator
Wednesday, Dec. 5
PM

Location

9:00-11:50
Opening
Keynote Conference Keynote& InviteHall& Invite
Add.
Conference
Hall
LCT
Main Hall C
Main Hall A

AMD

CRT

PDP

PH
FED

Display
Measurement

High Performance
LCDs

TV ApplicationLCD Application
LCD vs. OLED-New Materials

Novel
Application

Friday, Dec. 7
PM

Alignment
Process (1)Alignment
Process (2)*Organic TFT &OLEDOrganic TFT

poly-Si TFT

Crystallization

18:10-19:10

AM

A.I.

Posters

Fast Response
LCDs (2)EP

MEMS

Manufacturing
Tech. (1)Manufacturing
Tech. (2)Manufacturing
Tech. (3)A.I.
Color Filters

IPD

Backlight
Systems (1)Backlight
Systems (2)A.I.
History & Futureof CRT

CRT Deflection
Sys.

Super Slim CRT

CRT Tech.

Protective Layer Protective Layer(1)(2)

Cell Tech.

Posters

A.I.

Driving Tech.
Posters

Posters

PDP TV

A.I.
Phos. for FEDs,
LEDs & Lighting

Phos. for EL

Posters

A.I.
Synthesis &Theory of Phos.

Phos. for PDPs

FEDs & Novel
Devices

CNT Emitters
for FEDs (1)A.I.

Small Hall

A.I.
CNT Emitters
for FEDs (2)FE Materials &Structures

FE Materials &DevicesA.I.

Display

Process

Material*Organic TFT &OLEDMain Hall C
Mid-sized
Hall B
Main Hall C

A.I.

Posters

A.I.
Hyper Real. Disp.
& Acqui. Sys.

Posters

Motion Blur

3D Display

Holography

Human Factor &3D Display

Moving Image
Quality

Color

Display
Characteristics& Vision

A.I.

A.I.
Display Image
Quality

Color Breakup
Posters

A.I.

A.I.
Projection
Comp. & Sys.

Solid State
Lightsources

Posters

A.I.

Electronic Paper(4)Electronic Paper Electronic Paper Electronic Paper
(1)
(2)
(3)
A.I.
Displays &Imaging (1)Main Hall B

Displays &Imaging (2)Posters
Emerging
Optical MEMS
MEMS Tech.
DevicesA.I.
Mech. Mater. &Process Tech.
A.I.

High Dynamic
Range Display

High Quality
Image
Processing

Mid-sized
Hall A
Main Hall C

Novel Driver
Application

Display System
Tech.
Late News
PapersA.I.

Posters

A.I.
Nonlinear
Phenom. &Commun. Dev.

Main Hall A
Main Hall C

Optical Films

Posters

Main Hall C

DES

Materials

A.I.

Main Hall C
Mid-sized
Hall A
Main Hall A
Main Hall C
Mid-sized
Hall B
Main Hall C

Small Hall

A.I.
OxideSemiconductor
TFT

SOG & µc-Si
TFT

Mid-sized
Hall A

LAD

Transflective
LCDs

A.I.

Small Hall

Mid-sized
Hall B
Main Hall C
Conference
Hall
Main Hall C
Mid-sized
Hall A
Mid-sized
Hall B
Main Hall C

18:10-19:10

Posters

OLED Main Hall A

VHF

PM

Novel LCD
Modes

A.I.

Room
107, 108
Main Hall C

Main Hall C
Mid-sized
Hall A

3D

AM

A.I.

Room
107, 108
Main Hall C
Main Hall B

FMC

Fast Response
LCDs (1)

Thursday, Dec. 6
18:00-19:00

New Imaging &Other Topics

Posters

LCT: Workshop on LC Science & Technologies
AMD: Workshop on Active Matrix Displays
FMC: Workshop on FPD Manufacturing, Materials & Components
CRT: Workshop on CRTs
PDP: Workshop on Plasma Displays
PH: Workshop on EL Displays & Phosphors

A.I.

FED: Workshop on Field Emission Display
OLED: Workshop on Organic LED Displays
3D: Workshop on 3D/Hyper-Realistic Displays & Systems
VHF: Workshop on Applied Vision & Human Factors
LAD: Wokshop on Projection & Large-Area Displays, & Their Components
EP: Workshop on Electronic Paper

MEMS: Workshop on MEMS for Future Displays & Related Electron Divices
DES: Workshop on Display Electronic Systems
IPD: Topical Session on Imaging & Photonic Devices
A.I.: Author Interviews*: Joint Session

IDW ’07
FINAL PROGRAM

IDW ’07 Secretariat:
c/o ABEISM CORPORATION
4-30-12 Kamimeguro, Meguro-ku
Tokyo 153-8571, Japan