News Release

onsemi’s EliteSiC Silicon Carbide Family Solutions Deliver
Industry-Leading Efficiency
New 1700 V EliteSiC devices provide reliable, high-efficiency operation in energy infrastructure
and industrial drive applications
LAS VEGAS – Jan. 3, 2023 – onsemi (Nasdaq: ON), a leader in intelligent power and sensing
technologies, today introduced “EliteSiC” as the name of its silicon carbide (SiC) family. This week, thecompany will showcase three new members of the family – the 1700 V EliteSiC MOSFET and two 1700 V
avalanche-rated EliteSiC Schottky diodes – at the Consumer Electronics Show (CES) in Las Vegas. The
new devices provide reliable, high-efficiency performance for energy infrastructure and industrial drive
applications and highlight onsemi’s position as a leader in industrial silicon carbide solutions.
With the 1700 V EliteSiC MOSFET (NTH4L028N170M1), onsemi delivers higher breakdown voltage (BV)
SiC solutions, required for high-power industrial applications. The two 1700 V avalanche-rated EliteSiC
Schottky diodes (NDSH25170A, NDSH10170A) allow designers to achieve stable high-voltage operation
at elevated temperatures while offering high efficiency enabled by SiC.
“By providing best-in-class efficiency with reduced power losses, the new 1700 V EliteSiC devices
reinforce the high standards of superior performance and quality for products in our EliteSiC family as well
as further expand the depth and breadth of onsemi’s EliteSiC,” said Simon Keeton, executive vicepresident and general manager, Power Solutions Group, onsemi. “Together with our end-to-end SiC
manufacturing capabilities, onsemi offers the technology and supply assurance to meet the needs ofindustrial energy infrastructure and industrial drive providers.”
Renewable energy applications are consistently moving to higher voltages with solar systems from 1100
V to 1500 V DC Buses. To support this change, customers require MOSFETs with a higher BV. The new1700 V EliteSiC MOSFET offers a maximum Vgs range of -15 V/25 V, making it suitable for fast switching
applications where gate voltages are increasing to -10V, delivering increased system reliability.
At a test condition of 1200 V at 40 Amps, the 1700 V EliteSiC MOSFET achieves a gate charge (Qg) of200 nC – which is market-leading compared to equivalent competitive devices that are closer to 300 nC.
A low Qg is critical to achieving high efficiency in fast switching, high-power renewable energyapplications.
At a BV rating of 1700 V, the EliteSiC Schottky diode devices offer improved margin between themaximum reverse voltage (VRRM) and the peak repetitive reverse voltage of the diode. The new devices
also provide excellent reverse leakage performance with a maximum reverse current (IR) of just 40 µA at25°C and 100 µA at 175°C – significantly better than competitive devices that are often rated at 100 µA at25°C.
Learn more about onsemi EliteSiC solutions at onsemi.com or visit us at CES 2023, in Las Vegas, NV,January 5-8.

###About onsemi
onsemi (Nasdaq: ON) is driving disruptive innovations to help build a better future. With a focus on
automotive and industrial end-markets, the company is accelerating change in megatrends such as
vehicle electrification and safety, sustainable energy grids, industrial automation, and 5G and cloudinfrastructure. onsemi offers a highly differentiated and innovative product portfolio, delivering intelligent
power and sensing technologies that solve the world’s most complex challenges and leads the way tocreating a safer, cleaner, and smarter world. onsemi is recognized as a Fortune 500® company andincluded in the S&P 500® index. Learn more about onsemi at www.onsemi.com.
onsemi and the onsemi logo are trademarks of Semiconductor Components Industries, LLC. All otherbrand and product names appearing in this document are registered trademarks or trademarks of theirrespective holders. Although the Company references its website in this news release, information on thewebsite is not to be incorporated herein.

Contacts
Stefanie Cuene
Head of Public Relations
onsemiStefanie.Cuene@onsemi.com
Parag Agarwal
Vice President - Investor Relations & Corporate Development
onsemi(602) 244-3437
investor@onsemi.com