DATA SHEET
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MOSFET - Power, Single
N-Channel, SO-8 FL

V(BR)DSSID MAX

6.95 mW @ 10 V

30 V

30 V, 46 A

RDS(ON) MAX

46 A

10.8 mW @ 4.5 V

NTMFS4C10N

D (5−8)Features• Low RDS(on) to Minimize Conduction Losses• Low Capacitance to Minimize Driver Losses• Optimized Gate Charge to Minimize Switching Losses• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

G (4)CompliantS (1,2,3)

Applications

N−CHANNEL MOSFET• CPU Power Delivery• DC−DC Converters

MARKINGDIAGRAMSMAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
SymbolValue

Unit

Drain−to−Source Voltage

VDSS

30V

Gate−to−Source Voltage

VGS±20VID

15.0

A

Parameter

Continuous Drain
Current RqJA
(Note 1)TA = 25°C

Power Dissipation
RqJA (Note 1)

TA = 25°C

PD

2.49

W

Continuous Drain
Current RqJA ≤ 10 s
(Note 1)TA = 25°C

ID

22.5

A

Power Dissipation
RqJA ≤ 10 s (Note 1)

TA = 25°C

PD

5.6

W

TA = 25°C

ID

8.2

A

Continuous Drain
Current RqJA
(Note 2)TA = 80°C

SteadyState111.2

TA = 80°C

16.8

TA = 80°C

6.2

Power Dissipation
RqJA (Note 2)

TA = 25°C

PD

0.75

W

Continuous Drain
Current RqJC(Note 1)

TC = 25°C

ID

46

A

Power Dissipation
RqJC (Note 1)

TC = 25°C

PD

23.6

W

TA = 25°C, tp = 10 ms

IDM

340

ATJ, TSTG−55 to+150°C

IS

21

A

Drain to Source dV/dt

dV/dt

7.0

V/ns

Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VGS = 10 V, IL = 25 Apk,
L = 0.1 mH, RGS = 25 W) (Note 3)

EAS

31mJ

Lead Temperature for Soldering Purposes(1/8″ from case for 10 s)

TL

260°C

Pulsed Drain Current

TC =80°C

Operating Junction and Storage Temperature
Range
Source Current (Body Diode)DS
SO−8 FLAT LEADSCASE 488AA
S
STYLE 1G34

D4C10N
AYWZZ
DDA
YW
ZZ

= Assembly Location= Year= Work Week
= Lot Traceabililty

ORDERING INFORMATION
DevicePackage

Shipping†

NTMFS4C10NT1G

SO−8 FL(Pb−Free)

1500 /Tape & Reel

†For information on tape and reel specifications,
including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

Stresses exceeding those listed in the Maximum Ratings table may damage thedevice. If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum rating. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 17 Apk, EAS = 14 mJ.

© Semiconductor Components Industries, LLC, 2015

October, 2023 − Rev. 101Publication Order Number:
NTMFS4C10N/D

NTMFS4C10N
THERMAL RESISTANCE MAXIMUM RATINGS
SymbolValue

Junction−to−Case (Drain)

Parameter

RqJC

5.3

Junction−to−Ambient – Steady State (Note 4)

RqJA

50.3

Junction−to−Ambient – Steady State (Note 5)

RqJA

165.9

Junction−to−Ambient – (t ≤ 10 s) (Note 4)

RqJA

22.2

Unit°C/W

4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)Parameter

SymbolTest Condition

Min

TypMaxUnit

OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage

V(BR)DSSVGS = 0 V, ID = 250 mA

30

Drain−to−Source Breakdown Voltage(transient)

V(BR)DSSt

VGS = 0 V, ID(aval) = 7.1 A,
Tcase = 25°C, ttransient = 100 ns

34

Drain−to−Source Breakdown Voltage
Temperature Coefficient

V(BR)DSS/TJ

Zero Gate Voltage Drain Current

Gate−to−Source Leakage Current

IDSSV
V
14.5

VGS = 0 V,VDS = 24 V

mV/°C

TJ = 25°C

1.0

TJ = 125°C

10IGSSVDS = 0 V, VGS = ±20 V

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

Negative Threshold Temperature Coefficient

VGS(TH)/TJmA±100nA

2.2V

ON CHARACTERISTICS (Note 6)

Drain−to−Source On ResistanceRDS(on)

1.3
4.7

mV/°C

VGS = 10 V

ID = 30 A

5.8

6.95

VGS = 4.5 V

ID = 15 A

8.9

10.8

Forward TransconductancegFS

VDS = 1.5 V, ID = 15 A

Gate ResistanceRG

TA = 25°C

430.3

1.0mW
S

2.0W

CHARGES AND CAPACITANCES
Input Capacitance

CISS

Output Capacitance

COSSReverse Transfer Capacitance

CRSS987
VGS = 0 V, f = 1 MHz, VDS = 15 V574

pF

162

Capacitance Ratio

CRSS/CISSVGS = 0 V, VDS = 15 V, f = 1 MHz

Total Gate Charge

QG(TOT)

9.7

Threshold Gate Charge

QG(TH)

1.5

Gate−to−Source Charge

QGS

Gate−to−Drain Charge

QGD

4.8

Gate Plateau Voltage

VGP

3.2

V

Total Gate Charge

QG(TOT)

18.6nC

VGS = 4.5 V, VDS = 15 V; ID = 30 A

VGS = 10 V, VDS = 15 V; ID = 30 A

0.165

2.8nC

SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay TimeRise TimeTurn−Off Delay Time
Fall Timetd(ON)
trtd(OFF)

9.0
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W

tf

3414
7.0

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2nsNTMFS4C10N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)Parameter

SymbolTest Condition

Min

TypMaxUnit

SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise TimeTurn−Off Delay Time
Fall Timetd(ON)
trtd(OFF)

7.0
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W

tf

26ns18
4.0

DRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage

VSD

Reverse Recovery TimetRR

Charge TimetaDischarge Timetb

Reverse Recovery Charge

QRR

VGS = 0 V,
IS = 10 A

TJ = 25°C

0.80

TJ = 125°C

0.67

1.1

V

26.7
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A

14.1

ns

12.6
13.7

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.

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3NTMFS4C10N
TYPICAL CHARACTERISTICS

4.0 V
4.2 V to 10 V

80

3.8 V

TJ = 25°C

ID, DRAIN CURRENT (A)

3.6 V
3.4 V
3.2 V
3.0 V
2.8 V

12434030

TJ = 125°C

20

TJ = 25°C
TJ = −55°C0

2.0

2.5

3.0

3.5

4.0

Figure 2. Transfer Characteristics

ID = 30 A

0.012
0.010
0.008
0.006
0.004
4.0

5.0

6.0

7.0

8.0

9.0

VGS, GATE−TO−SOURCE VOLTAGE (V)

104.5 5.00.020
0.018

TJ = 25°C

0.016
0.014
0.012
VGS = 4.5 V

0.010
0.008

VGS = 10 V

0.006
0.004
0.002

10203040506070

ID, DRAIN CURRENT (A)Figure 3. On−Resistance vs. VGS

Figure 4. On−Resistance vs. Drain Current andGate Voltage

1.7

10000

VGS = 0 V

ID = 30 A
VGS = 10 V
IDSS, LEAKAGE (nA)RDS(on), DRAIN−TO−SOURCERESISTANCE (NORMALIZED)

1.5

Figure 1. On−Region Characteristics

0.014

1.5

1.0

VGS, GATE−TO−SOURCE VOLTAGE (V)

0.016

1.6

0.5

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

0.018

3.050050.020

0.002

60102.6 V
0VDS = 5 V

70RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)ID, DRAIN CURRENT (A)6560
55504540353025201510501.4
1.3
1.2
1.1
1.0

1000

TJ = 150°C

TJ = 125°C

100

TJ = 85°C

0.9
0.8
0.7
−50−250255075

100125150

10510152025TJ, JUNCTION TEMPERATURE (°C)

VDS, DRAIN−TO−SOURCE VOLTAGE (V)Figure 5. On−Resistance Variation withTemperature

Figure 6. Drain−to−Source Leakage Current
vs. Voltage

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430

NTMFS4C10N
TYPICAL CHARACTERISTICS

C, CAPACITANCE (pF)

VGS = 0 V
TJ = 25°C

Ciss

1000

VGS, GATE−TO−SOURCE VOLTAGE (V)

1200

800
Coss
600
400
Crss

200
0051015202530QT

98765Qgs

4Qgd

3

TJ = 25°C
VDD = 15 V
VGS = 10 V
ID = 30 A

210024681020IS, SOURCE CURRENT (A)

18td(on)trtd(off)tf

161412108641000.4

100

TJ = 125°CTJ = 25°C
0.5

0.6

0.7

0.8

0.9

1.0

RG, GATE RESISTANCE (W)VSD, SOURCE−TO−DRAIN VOLTAGE (V)Figure 9. Resistive Switching Time Variation
vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

Single Pulse
TC = 25°C
10 ms

100

100 ms1010 ms
1 ms

100 msRDS(on) Limit
Thermal Limit
Package Limit
0.11s
1EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)

ID, DRAIN CURRENT (A)120

VGS = 0 V

20.118Figure 8. Gate−to−Source andDrain−to−Source Voltage vs. Total Charge

10116Figure 7. Capacitance Variation

100100014Qg, TOTAL GATE CHARGE (nC)

VDD = 15 V
ID = 15 A
VGS = 10 V

112VDS, DRAIN−TO−SOURCE VOLTAGE (V)

1000t, TIME (ns)101014ID = 17 A

121086420255075100125

VDS, DRAIN−TO−SOURCE VOLTAGE (V)TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 11. Maximum Rated Forward Biased
Safe Operating Area

Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature

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5150NTMFS4C10N
TYPICAL CHARACTERISTICS10RqJC (t) (°C/W)

Duty Cycle = 50%
120%10%5%2%1%0.1

Single Pulse
0.01

0.000001

0.00001

0.0001

0.001

0.1

0.01

1

PULSE TIME (sec)Figure 13. Thermal Response

IAS, AVALANCHE CURRENT (A)6050

GFS (S)

4030
201000102030

4050

60

70100

TA = 25°C

11.E−0880

TA = 85°C

101.E−07

1.E−06

1.E−05

1.E−04 1.E−03

ID (A)PULSE WIDTH (SECONDS)

Figure 14. GFS vs. ID

Figure 15. Avalanche Characteristics

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6MECHANICAL CASE OUTLINEPACKAGE DIMENSIONSDFN5 5x6, 1.27P(SO−8FL)
CASE 488AA
ISSUE N

1DATE 25 JUN 2018

SCALE 2:12X

NOTES:
1. DIMENSIONING AND TOLERANCING PERASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATEBURRS.

0.20 C
D2A
B

D12X

0.20 C
4X

E12123q

E
c

A14TOP VIEWC
DETAIL A

0.10 CSEATING
PLANE

A
0.10 CSIDE VIEWMILLIMETERSMIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−0.050.33
0.41
0.510.23
0.28
0.33
5.00
5.15
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.30
6.15
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_−−−
12 _DIM
A
A1bc
D
D1
D2E
E1E2e
GK
L
L1M
q

GENERICMARKING DIAGRAM*DETAIL A

18X b

0.10

C A B

0.05

c

XXXXXX
AYWZZ

e/2e

L
14K

PIN 5(EXPOSED PAD)

RECOMMENDEDSOLDERING FOOTPRINT*

E2L1M

2X

0.495

4.560
2X

1.530
G

D2
BOTTOM VIEW2X

XXXXXX = Specific Device CodeA= Assembly Location
Y= YearW= Work Week
ZZ= Lot Traceability*This information is generic. Please refer todevice data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.

0.475
3.200
4.530

STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN

1.330

STYLE 2:
2X
PIN 1. ANODE
0.905
2. ANODE
3. ANODE
4. NO CONNECT0.965
5. CATHODE

14X

1.000
4X 0.750

1.270
PITCH
DIMENSIONS: MILLIMETERS*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.

DOCUMENT NUMBER:DESCRIPTION:

98AON14036D
DFN5 5x6, 1.27P (SO−8FL)

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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