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B5890

Silicon PNP transistor epitaxial type
B5890
[ Applications ]Switching regulators / DC-DC convertors
Low-voltage drop out (LDO) linear regulator out-put
Battery chargers
Power management switches[ Feature ]Low collector-emitter saturation voltage VCE(sat)= -0.21V(Max.) at IC= -2A, IB= -0.2A
High collector current ICP= -5AHigh DC current gain hFE= 100(Min.) at VCE=-2V, IC= -3A
Complement NPN type P/N D5890 available[ Absolute maximum ratings (Ta=25C) ]CharacteristicCollector-base voltage
Collector-emitter voltageEmitter-base voltage
Collector current
Collector current *1
Collector current *2
Base current
Junction temperature
Storage temperature*1 Pulse width≦ 100ms, duty≦ 25%Symbol Maximum ratings
Unit
VCBO
-20
VVCEO
-20
V
VEBO
-5
VIC-2
A
ICRP-3A
ICP-5
A
IB-0.5
A
Tj
150
CTstg
-55 to 150
C*2 Single pulse peak

[ Electrical characteristics (Ta=25C) ]Characteristic
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain 1
DC current gain 2
DC current gain 3
DC current gain 4
DC current gain 5

Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE 1
hFE 2
hFE 3
hFE 4
hFE 5

Collector-emitter saturation voltage 1

VCE(sat) 1

Collector-emitter saturation voltage 2

VCE(sat) 2

Collector-emitter saturation voltage 3

VCE(sat) 3

Collector-emitter saturation voltage 4

VCE(sat) 4

Collector-emitter saturation voltage 5

VCE(sat) 5

Collector-emitter on resistanceBase-emitter saturation voltage 1
Base-emitter saturation voltage 2
Base-emitter on voltage
Transition frequency
Collector output capacitance

RCE(sat)
VBE(sat) 1VBE(sat) 2

VBE(on)
fT
Cob

Min.
-20-20-5220
220
200
150
100100-Typ.
75-Max.
-100-100-70-130-230-210-300
105-1.1
-1.2
-1.2
50

Unit
VV
VnAnA
mVmV
mV
mV
mVm･ohm
VV
V
MHz
pF

Conditions
IC= -10uA, IE= 0A
IC= -1mA, IB= 0A
IE= -10uA, IC= 0A
VCB= -20V, IE= 0A
VEB= -5V, IE= 0A
VCE= -2V, IC= -0.1A
VCE= -2V, IC= -0.5A
VCE= -2V, IC= -1A
VCE= -2V, IC= -2A
VCE= -2V, IC= -3A
IC= -0.5A, IB= -50mA
IC= -1A, IB= -50mA
IC= -2A, IB= -0.1A
IC= -2A, IB= -0.2A
IC= -3A, IB= -0.3A
IC= -2A, IB= -0.2A
IC= -2A, IB= -0.1A
IC= -3A, IB= -0.3A
VCE= -2V, IC= -1A
VCE= -5V, IE= 0.1A
VCB= -10V, f = 1MHz, IE= 0A

Notice 1) These are measured data of transistors assembled by PHENITEC SEMICONDUCTOR Corp. and are for reference only.
Notice 2) The contents described herein are subject to change without notice.

PHENITEC SEMICONDUCTOR Corp.

No. B5890-20080404- 1/2 -B5890

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Fig.1 VBE(on) - IC
at VCE= -2V, Ta= 25C

Fig.2 hFE - IC
at VCE= -2V, Ta= 25C

10Fig.3 VCE(sat) - IC
at IC/IB= 10, Ta= 25C
1000

1000

0.1

0.01

100

100.001

0.001
0.4

0.5

0.6

0.7

0.8

Collector-emitter saturation
voltage : -VCE(sat) (mV)

DC current gain : hFE

Collector current : -IC (A)10.90.01

Base-emitter on voltage: -VBE(on) (V)
Fig.4 VCE(sat) - IC
at IC/IB= 20, Ta= 25C

100.010.1

11

Fig.5 VBE(sat) - IC
at IC/IB= 10, Ta= 25C

Fig.6 VBE(sat) - IC
at IC/IB= 20, Ta= 25C

100.010.1

1Collector current : -IC (A)Collector current : -IC (A)Fig.7 fT - IE
at VCE= -5V, Ta= 25C

Fig.8 Cob - VCB
at f= 1MHz, Ta= 25C

1010.1
0.001

0.01

0.1

110

Collector current : -IC (A)100

Collector output
capacitance : Cob (pF)Transition frequency: fT (MHz)0.1

Collector current : -IC (A)100.10.001

1000

1001010.001

0.01

Collector current : -IC (A)1101010.001

10Base-emitter saturation
voltage : -VBE(sat) (V)10010.001

110

Base-emitter saturation
voltage : -VBE(sat) (V)Collector-emitter saturation
voltage : -VCE(sat) (mV)

1000

0.1

1000.01

0.1

Emitter current : IE (A)1100.1110100
Collector-base voltage : -VCB (V)-20080404
PHENITEC SEMICONDUCTOR Corp.

No. B5890-20080404- 2/2 -