APPLICATION NOTE
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FAD3151MXA, FAD3171MXA Gate Driver
Application Note
110 V 2.5 A Single Channel Floating Gate Drivers with Desaturation
Protection and Charge Pump

AND90251/D• MOSFET Drain−Source Desaturation Detection withThe FAD3151MXA and FAD3171MXA are single
channel floating automotive gate drivers suitable for driving
high−speed power MOSFETs up to 110 V. Designed in a SOI
technology, the drivers are ideal for applications that requirenoise immunity against severe negative transients andground offset up to −80 V.
The FAD3151MXA/71 drivers have an integrated
desaturation detection to protect the power switches during
short−circuit and over−current conditions. The drivers arealso equipped with a soft shutdown feature, which initiatesa soft shutdown of driver outputs upon desaturation
detection, thus preventing possible overvoltage acrosspower MOSFETs during a heavy−load condition.
The FAD3151MXA/71 drivers are equipped withbidirectional fault reporting pin that generates a fault output
during desat and under−voltage lockout (UVLO) condition
and at the same time acts as a shutdown/disable pin for thedriver. The FLT pin is in a pulled−up state for normal
operation. The gate driver pulls down the FLT pin internallyduring desat and under−voltage lockout condition. The
bidirectional nature of the fault−reporting pin allows thedriver to respond to external fault commands and giving
status feedback saving one pin. In addition, theFAD3171MXA has an integrated charge pump to support
100% duty cycle operation of high side MOSFETS.
In summary, the FAD3151MXA/71 are versatile drivers
with features like desat detection, soft shutdown, fault
reporting capability, UVLO protection, and charge pump.

Soft Shutdown• Integrated Charge Pump to Support 100% Duty Cycle
Operation (FAD3171 Only)• Under−voltage Lockout for Both Input Logic and Output
Stage• Bi−directional Fault Reporting Pin• High Speed Driver with Short Propagation Delay• dVs/dt Immune to Min ±50 V/ns
• 3.3 V and 5 V Input Logic Compatible• Up to VDD Swing on Input Pins
• SOIC−8 Package• Pb−Free and RoHS compliant• Automotive Qualified to AEC Q100
Typical Applications• Gate Driver for 80 V and 100 V MOSFETs and Modules• 48 V Belt Starter Generator• 48 V Auxiliary Motor Control(A/C Compressor, e−Turbo, ...)• 48 V Battery Switches• 48 V DC−DC Converter• PTC Heaters• Active DC−Link Discharge Circuits

Features• Single Channel Gate Driver with +/−110 V Floating Vs
Capability• 2.5 A Output Source and Sink Current© Semiconductor Components Industries, LLC, 2023

September, 2023 − Rev. 0

Figure 1. SOIC−8 (Case 751EB)

1

Publication Order Number:AND90251/D

AND90251/D
Rboot

15 V

Dboot

48 V
R3

5V
R4

R5

C1

1. VB

8. VB

2. IN

7. HO

Cboot
R1

R2

3. FLT 6. Desat
P1

Cext

5. VS

4. COM

FAD3171 (with charge pump)Controller

optional

(

)
1. VB

8. VB

2. IN

7. HO

3. FLT 6. Desat
4. COM

5. VS

FAD3151 (no charge pump)

Figure 2. Application Schematic with FAD3171 as High Side and FAD3151 as Low Side Drivers

Figure 3. FAD3151 and FAD3171 (with Charge Pump) Simplified Block Diagram

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LoadAND90251/DPIN FUNCTION DESCRIPTION

1. VB

8. VB

2. IN

7. HO

3. FLT6. Desat

4. COM

5. VS

Figure 4. Pin Connection (Top View)

PIN DESCRIPTION
Pin No.

SymbolDescription

1

VDD

Power supply for logic stage2

IN

Input command3

FLT

Bi−directional Fault pin

4COM

Ground for logic stage

5

VS

Floating source connection

6

Desat

Drain to Source Desaturation detection pin

7HO

Output8

VB

Floating Power Supply for power stage

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AND90251/D
APPLICATION EXAMPLES
Gate Driver for 48 V DC−DC Converter Battery Switch

The charge pump integrated in the FAD3171 turns on assoon as the bootstrap voltage drops below the charge pumpturn on threshold, typ. 10.8 V. The charge pump operates andsupplies current until the bootstrap voltage reaches the uppercharge pump turn off threshold voltage (typ. 11.2 V) or, incase current consumption is too high, the bootstrap voltage
drops to the driver turn off level of typ. 7.5 V.
Note that to minimize the leakage current in the gate path,the resistance R2 should not be too low. Considering the
200 mA current sourced by the charge pump at 9 V, excluding
the desat current, the resistance R2 should be greater than
47 kW to maintain 9 V on the gate of the MOSFET.

The simplified block diagram in Figure 5 shows how the
FAD3171 can be used to drive a MOSFET as a battery main
switch in a 48 V DC−DC converter.
The initial turn−on of the MOSFET is done through thebootstrap capacitance, initially charged by the 15 V supply.
The integrated charge pump in the FAD3171 does not haveenough source current capability to assure a direct energy
efficient turn on of a larger die size MOSFET.
Once the MOSFET is turned on with 100% duty cycle, thebootstrap capacitance cannot charge any more through the
15 V supply and gets depleted by the continuous current sink
into the gate to source resistance R2 and by the internal
leakage current of the gate driver.

15 V

R3
Rboot

Dboot
R2

48 V

RFLT
C1

1. VB

8. V B

2. IN

7. HO

3. FLT6. Desat

4. COM

5. V S

R1

Controller

Cboot

Cext

Figure 5. Gate Driver for 48 V Battery Switch

MODULE−1

MODULE−2

MODULE−3 (NC)

48 V

15 V
RBOOT DBOOT
R1
10 kW

1. VD D

8. VB

IN−High

2. IN

7. HO

FLT−High

3. FLT6. Desat

4. COM

5. VS

CBOOT

RG

P1

CBL

D1

R2

M

FAD3171
Controller
15 V
Optional
R1
10 kW

1. VD D

8. VB

IN−Low

2. IN

7. HO

FLT−Low

3. FLT6. Desat

4. COM

5. VS

CBOOT

RG

P1

CBL

D1

R2

FAD3151

Figure 6. Gate Driver for 48 V, 3−module 6−phase Motor Control Application Circuit

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AND90251/D
48 V

15 V
RBOOT DBOOT
D1

R1
10 kW
IN−High
FLT−High

1. VB

8. VB

2. IN

7. HO

CBOOT

RG

1

1

R2

3. FLT 6. Desat

P1
4. COM

1

CBL

5. VS

FAD3171

M

Controller
15 V
Optional
D1

R1
10 kW
IN−Low
FLT−Low

1. VB

8. VB

2. IN

7. HO

CBOOT

RG

0

0

R2

3. FLT 6. Desat

P1
4. COM

0

CBL

5. VS

FAD3151

Figure 7. Gate Driver in a 3−phase Motor Control Application Circuit Operating in Active System Protection
Gate Driver for High Power Motor Control, Configured
for Active System Protection♦ Turn on all High Side gate driver outputs (controlled

The block diagram in Figure 8 shows an example of motor
control application such as a 48 V belt starter generator(BSG). The fault pins of different gate drivers areinterconnected together to allow a short reaction time to turnoff the affected channels upon a fault detection.
To allow current generated by the motor to discharge inthe motor winding, the active turn on of the opposite
channels can be programmed within the microcontroller
with a simple logic as shown in Figure 8. The operation issummarized below:• The fault pins of all High Side gate drivers areinterconnected together; a fault on the High Side will:♦ Turn off all High Side gate driver outputs (controlled
by the gate driver FLT_HS pins)♦ Turn on all Low Side gate driver outputs (controlled
by the microcontroller control logic)• The fault pins of all Low Side gate drivers areinterconnected together; a fault on the Low Side will:♦ Turn off all Low Side gate driver outputs (controlled
by the gate driver FLT_LS pins)• Faults on both the High Side and the Low Side gate

by the microcontroller control logic)
drivers will:♦ Turn off both the High Side and Low Side gate driver
outputs (controlled by the gate driver FLT_HS and
FLT_LS pins)♦ To reset the fault in this case, the fault signals in the
microcontroller should be bypassed with a FLT_Resetsignal to allow the microcontroller to send a positive
pulse on its output
By tying all fault pins together on high side or low side, anactive system short−circuit protection can be achieved.
During active system fault protection, either all high side or
all low side switches are turned on to allow the load current
to freewheel preventing overvoltage conditions anddisturbances in the 48 V supply network and at the same timebringing the motor to safe state. Please refer to current flowin Figure 7.

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5AND90251/D
Example of a Fault Control Logic

The Fault control logic in Figure 8 to allow active
discharge is explained below:
FLT_LS

FLT_HS

FLT_Reset
Fault Control Logic
High SideHS

HS_outFigure 8. Example of Fault Control Logic High Side to Enable Active Discharge of Phase Current in Motor Winding• If FLT−Reset=1, then HS_out=HSFLT_LS FLT_HS

FLT_Reset is at 0 in all operation, except when a fault
needs to be cleared• If no fault on HS, FLT_HS=1♦ If no fault on the Low Side, FLT_LS=1, thenHS_out=HS♦ If fault on the Low Side, FLT_LS=0, then HS_out=1(active turn on)• If Fault on HS, FLT_HS=0, then Phase_HS_out=0 (noactive turn on for channels that have a fault)
In case both High Side and Low Side gate drivers are in
fault mode, then it is not possible to apply a positive pulse
on any input to clear a fault. The FLT_Reset command isused to bypass the faults and allow to apply a pulse on the
input of the gate drivers to clear a fault:

Microcontroller Interface to the Gate Driver’s IN and
FLT Pins

The microcontroller must have a pull up and a pull down
output stage to set the input of the gate driver to high and tolow. The microcontroller should, however, be able to pull up
and pull down the gate driver FLT pin. It should also be able
to adopt a high impedance state since the gate driver itself isable to trigger a fault by pulling down the FLT pin. This canbe done with a simple pull down stage combined with acomparator to monitor the state of the FLT pin.

Figure 9. Microcontroller I/O Interface with the Gate Driver
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AND90251/D
15 V
5V

48 V

FLT_LS
FLT_HS
FLT_LS

FLT_HS

Microcontroller
ASIC

1. VD D

8. VB

2. IN

7. HO

3. FLT6. Desat

4. COM

5. VS

5V

Fault Reset

Fault Control Logic
Low Side
LS1

HS2

LS2

HS3

Fault Control Logic
High Side

Fault Control Logic
Low Side

Fault Control Logic
High Side

HS1_out

FLT_HS

HS1

FLT_LS

Fault Control Logic
High Side

1. VD D

8. VB

2. IN

7. HO

3. FLT6. Desat

4. COM

5. VS

15 V
48 V

LS1_out

5V

HS2_out

1. VD D

8. VB

2. IN

7. HO

3. FLT6. Desat

4. COM

5. VS

5V
LS2_out

HS3_out

1. VD D

8. VB

2. IN

7. HO

3. FLT6. Desat

4. COM

5. VS

15 V
LS3_out

48 V

FLT_HS

5V

1. V D D

8. VB

2. IN

7. HO

3. FLT6. Desat

4. COM

5. VS

5V
FLT_LS

LS3

Fault Control Logic
Low Side

1. V D D

8. VB

2. IN

7. HO

3. FLT6. Desat

4. COM

5. VS

Figure 10. Block Diagram with Fault Pins Interconnected for Fault Communicationwww.onsemi.com
7AND90251/D
Bootstrap Drive Circuit Operation

VDESAT,TH

Both the FAD3151 and the FAD3171 normally use thebootstrap technique to achieve an elevated gate drive
voltage in high side operation. This bootstrap power supply
technique has the advantage of being simple and low cost.
However, it has some limitations. On time of duty−cycle it
is limited by the time required to refresh the charge in thebootstrap capacitor.
To overcome these limitations, the FAD3171MXA drivercontains an internal charge pump that enables 100% duty
cycle operation of high side power switches. When the highside switch is kept on for a long duration, the bootstrap
capacitor could slowly discharge and may eventually trigger
the undervoltage lockout protection and turn off the driver
output. Therefore, the purpose of the charge pump is tosupply the VBS quiescent current necessary for the high sidegate driver to operate under 100% duty cycle and tocompensate for additional leakage current on the gate path.
It should be ensured that the total leakage current in thegate path does not exceed the maximum output current
capability of the charge pump, ICP,OUT.
It is important to note that the charge pump is not intended
to provide gate charge during switching of a power
MOSFET; rather its purpose is to only keep the MOSFET
turned on. For this, it should be ensured at the system levelthat the high side MOSFET is not operated at very high duty
cycle or, if a high duty cycle operation is required, the offtime should be long enough to allow the bootstrap capacitor
on high side gate driver to completely recharge. In order tominimize continuous power dissipation, the charge pumpturns on only when needed, and remains off at other times.
For details on the bootstrap gate−drive circuit
requirements of the power MOSFET and IGBT in various
switching−mode power−conversion applications and thedimensioning of the components, please refer to AN−6076:
Design and Application Guide of Bootstrap Circuit for
High−Voltage Gate−Drive IC. AND9674/D (onsemi.com)

Desat

IN

Soft shutdown

HO
FLT

FLT Locking Duration(typ. 550 ms)

Figure 11. Desaturation Protection and Soft Shutdown

The desat terminal of the gate−driver IC monitors thedrain−source voltage, VDS, of the MOSFET continuously. In
the event of an overcurrent or short circuit condition, the desat
terminal detects a rise in VDS voltage. If the desat terminal
voltage exceeds Vdesat+ the gate driver IC generates a fault
status and turns off the gate−drive output HO. The desat diodeD1, resistor R1, blanking capacitor Cext, and P−channel JFET
P1 are the external components required to operate thedesaturation protection scheme as shown in Figure 12.
• When the gate output HO is turned off, the “normally on”
discharge transistor, P1, provides an alternate path to thedesat current source, Idesat, and prevents it from charging
the external capacitor, Cext. This ensures that the desat
terminal voltage is always below the desat threshold andthe fault signal is not triggered during off state.
• When the gate output HO is turned on, at a voltage above~6 V, the P−JFET, P1, turns off. This allows the Idesat tocharge the external capacitor, which forms a parallel
circuit with D1, R1 and the drain to source of the
MOSFET. After a period of time, tbl, the desat terminal
voltage, Vdesat, stabilizes at the same level as the VDS of
the MOSFET plus the forward voltage of the diode D1 andthe voltage drop across the resistor R1.

Desaturation Protection Circuit

In order to protect the power stage from overload or shortcircuit, the FAD3151/71 features desaturation detection,
which works as follows:
An internal constant current source, Idesat, charges anexternal capacitor connected to the desat pin. This allows a
programmable blanking delay during every ON cycle before
desat fault is processed, thus preventing false triggering.
When the desat voltage goes up and reaches the desaturationthreshold, Vdesat+, the output is driven low. Further, the FLT
output is activated. Please refer to data sheet Figure 19 or
Figure 11 below.

V desat + V DS ) ǒV f ) R 1

I desatǓ

(eq. 1)• During normal operation, the Vdesat is below the Vdesat+
and the fault pin remains disabled. During overcurrent
condition, the drain to source voltage of the MOSFET
rises causing the desat terminal voltage to rise as well. If
the desat terminal voltage exceeds VDesat+, which isdefined in the internal comparator stage, the gate drivergenerates a fault and turns off its output HO, independentof the status of the input pin.

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AND90251/D
The parameters of the desat protection circuit can be
adjusted as follows:
1. The desat detection must remain disabled for a shorttime period called blanking time to prevent false
triggering while the MOSFET first turns on. The

external blanking capacitor and the desat threshold
can set the blanking time. The greater the selected
Cext, the greater the blanking time, tbl.
t bl + C ext

5V

V desat) ń I desat(eq. 2)

15 V
48 V

D1
1. VB

7. HO

2. IN

Micro controller

R1

8. VB

I desat
6. Desat

4. COM

Level Shifter
Down

3. FLT

5. VS

P1

Cext

Figure 12. Desaturation Protection Circuit

2. The actual VDS threshold on the MOSFET side canbe modified by♦ Using a higher value of resistance R1: With ahigher R1, the voltage at desat terminal can rise toits desat threshold at a lower VDS threshold of the
MOSFET. This engages desat protection at alower VDS threshold of the MOSFET. Remember:
V desat + V DS ) ǒV f ) R 1

I desatǓPFET pulls the desat pin to ground. As a result, thedesat pin is immune to noises when complementary
FETs switches turn on and is not prone to spurious
triggering.
Method for Checking the Proper Operation of theDesaturation Protection Circuit During Startup
To comply with functional safety requirements, thesystem might need to verify the proper operation of thedesaturation protection circuit during startup. Figure 10
shows the external components necessary to perform aself−check of the desat protection circuit during startup.
• During normal operation, the self−check transistors (N1 inhigh side and N2 in low side) are turned off and the gate of
P1 is controlled by the respective gate driver output HO.
♦ When HO is low, the “normally on” P1 keeps the Cext
discharged by default. As a result, the desat protection
is disabled.
♦ When HO is high, the gate of P1 is pulled high throughR2, causing P1 to turn off. As a result, Cext is free tocharge and engage in desat protection.
• During self−check mode of high side gate driver, theoutput of the gate driver HO should be turned off and theVs pin should be set to ground. The Vs pin can be pulled
to ground by turning on the low side gate driver.
• The self−check sequence for high side desat protection
circuit is as follows: (please refer to the high side
components in Figure 10 and the self−check sequence inFigure 11 for details.)
i. The microcontroller provides a high side self−checksignal to turn on transistor N1.
ii. The PMOS P3 turns on and pulls up the gate voltageof P1 to VDD (= 15 V) through the path VDD−P3−D3.
As a result, P1 turns off.

(eq. 3)♦ The selection of the desat diode is important. The

desat protection works perfectly with a 200 V,
200 mA diode, which has a very low junction
capacitance. When in experiments it was replacedwith a generic 100 V, 1 A Schottky diode, anegative voltage spike was found to appear on thedesat pin due to higher junction capacitance of this
diode.
NOTE: A low junction capacitance of the desat
diode is essential for proper operation of
the desat function under all operating
conditions.
♦ Adding multiple series diodes: Adding diodes inseries can engage desat protection at a lower VDS
threshold of the MOSFET. However, thedrawback is an additional increase in reverse
recovery currents during turn−off of these diodes.
The desat terminal voltage, Vdesat, with series
diodes can be expressed as:
V desat + V DS ) ǒnVf ) R1

I desatǓ

(eq. 4)

where n is the number of diodes.
♦ During off state (HO low) the desat function isimmune to any noise like that of capacitive
coupling from adjacent switches the normally on

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9AND90251/D
iii. When P1 turns off, the desat current flows into Cext
and charges it until the voltage at the desat terminal
rises to the desat threshold, Vdesat+. When Vdesat
exceeds the internal Vdesat+, a fault status is triggeredat the FLT pin of high side driver.
iv. The fault status is cleared when the self−check signal
for high side driver is turned off.
• A malfunction of the high side desat protection circuit isdetected:♦ if the high side gate driver is unable to trigger (set) a
fault status on the FLT pin during self−check, or♦ if the gate driver is unable to clear this fault status at
the end of self−check.
• During self−check mode of low side gate driver, theoutput of the high side gate driver should be turned off.
The self−check sequence for low side desat protection
circuit is as follows: (Please refer to the low side
components in Figure 13 and the self−check sequence inFigure 14 for details.)
i. The microcontroller provides a low side self−checksignal to turn on transistor N2. At the same time, theoutput of the low side gate driver is turned on. As aresult, P1 turns off.
ii. When P1 turns off, both the ICE of N2 and Idesat cancharge Cext. In comparison to Idesat, the ICE of N2
could be significantly higher. Therefore, Cext is
rapidly charged. When Vdesat is higher than Vdesat+,a fault status is triggered at the FLT pin of low side
driver.
iii. The fault status is cleared when the self−check signal
and the input signal for low side driver are turned off.
• A malfunction of the low side desat protection circuit isdetected:♦ if the low side gate driver is unable to trigger (set) a
fault status on the FLT pin during self−check, or♦ if the low side gate driver is unable to clear this fault
status at the end of self−check.
NOTE: The desat self−check circuit shown for high side
can also be adopted for low side. The low sidedesat self−check circuit shown in Figure 13 has
fewer components than the self− check circuit onhigh side.

48 V
5V
R3
D1

P3
1. VDD

8. VB

INH

2. IN

7. HO

FLT

3. FLT6. Desat

4. COM

5. VS

R1

D3

R2

R4

High side
FAD3171

P1

Cext

Controller
LOAD

Optional
High sideself−check

INL

Low sideself−check

D1

N1

5V

N2

1. VDD

8. VB

2. IN

7. HO

3. FLT6. Desat

4. COM

5. VS

R1

R2
P1

Cext

Low side
FAD3151
R5

Figure 13. Circuit to Perform Self−check of the Desaturation Protection During Startup

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10AND90251/D
High side IN

High side desat
self−check

Low side desat
self−check

Low side IN

Self−check low
Self−check high
VDesat+
VDesat low
VDesat+
VDesat highFLT
FLT
triggered

FLT
clearedFLT
triggered

FLT
clearedFigure 14. Self−check Sequence for High Side and Low Side Gate Driver
Considerations for Safety Critical Applications

For systems requiring functional safety, it is necessary to
identify systematic failure modes that could compromise thesafety of the system. The desat protection and its self−check
circuit as explained in the previous chapter should be able todetect and protect against single−point failures of safety
critical components. onsemi can support the integration into
customer’s safety applications with a set of safety
documents including FMEDA on request.

Table 1. FAILURE MODE ANALYSIS OF THE DESAT PROTECTION CIRCUIT
Component

Failure Mode

Effect and Diagnosis of Failure

R1

Open

Triggers a systematic desat fault condition when
HO is turned on.

Safe

Short

Engages desat protection at a higher VDS
threshold of the MOSFET.

• Risk• Despite the failure, the system can operate
without issue.
• Mitigation:
Adding two resistances in series could be an
option to ensure that a single point failure does
not result in a safety concern.

Open

Triggers a systematic desat fault condition when
HO is turned on.

Safe

Short

Exposes the desat pin to high voltage and could
damage the gate driver.

• Risk• Mitigation:
Adding two diodes in series could be an option
to ensure that a single point failure does not result in a safety concern.

Open

Eliminates the blanking time and causes aninadvertent triggering of desat fault during turn onof MOSFET.

Safe

Short

• Does not allow the desat pin to reach desat
Safe
threshold.
• Triggers a desat fault during self−check at start up.

Open

Cext is unable to discharge; triggers a systematic
desat fault condition.

Safe

Short

Does not allow the desat pin to reach its desat
threshold during self−check; this can be detectedduring self−check as a fault status is triggered on
the FLT pin.

Safe

D1

Cext

P1

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11

Behavior

AND90251/D
Table 2. FAILURE MODE ANALYSIS OF THE DESAT SELF−CHECK CIRCUIT FROM FIGURE 13
Component

Failure Mode

Effect and Diagnosis of Failure

D3

Open

• Does not allow P1 to turn off during self− check;
this can be detected during self− check as afault status is triggered on the FLT pin.

Safe

Short

No issues

Safe

Open

Does not allow P1 to turn off during self− check;
this can be detected as a fault status is triggeredon the FLT pin.

Safe

Short

• Pulls up the gate of P1 consistently.
• Causes an inadvertent triggering of the desat
fault.

Safe

Open• This can be detected during self−check.
• The FLT pin is able to trigger a fault status but isunable to clear it.

Safe

Short

• Pulls down the gate of P1 to ground and does
not allow P1 to turn off during self−check; thiscan be detected as a fault status is triggered on
the FLT pin.
• Does not affect desat protection during normal
operation.

Safe

Open

Does not allow P1 to turn off during self−check;
this can be detected (FLT pin is able to set thefault status but unable to clear it).

Safe

Short

Does not allow P3 to turn on (and P1 to turn off);
this can be detected as a fault status is triggeredon the FLT pin.

Safe

R4

Open

Does not allow P3 to turn on (and P1 to turn off)
during self−check; this can be detected as a fault
status is triggered on the FLT pin.

Safe

Short

No issues

Safe

N1

Open

Does not allow P3 to turn on (and P1 to turn off)
during self−check; this can be detected as a fault
status is triggered on the FLT pin.

Safe

Short

Does not allow P3 to turn off (and P1 to turn off)
during self−check; this can be detected as the FLT
pin is unable to clear the fault status.

Safe

Open

A fault status is not triggered during self−check;
this can be detected.

Safe

Short

the Cext is never discharged. Causes aninadvertent triggering of the desat fault.

Safe

Open

A fault status is not triggered during self−check;
this can be detected.

Safe

Short

No issues.

Safe

P3

R2

R3

N2

R5

Behavior

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provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance mayvary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any licenseunder any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
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