DATA SHEET
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Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
16 A, 650 V, D1, TO-220-2L
1. CathodeFFSP1665A

2. Anode

Schottky Diode

Description

Silicon Carbide (SiC) Schottky Diodes use a completely newtechnology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation ofpower semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, andreduced system size and cost.

1Features• Max Junction Temperature 175°C• Avalanche Rated 81 mJ• High Surge Current Capacity• Positive Temperature Coefficient• Ease of Paralleling• No Reverse Recovery/No Forward Recovery• This Device is Pb−Free, Halogen Free/BFR Free and RoHS

2TO−220−2LD
CASE 340BB

MARKING DIAGRAM

Compliant

AXYYKKFFSP
1665A

Applications• General Purpose• SMPS, Solar Inverter, UPS• Power Switching Circuits

A
XYY
KK
FFSP1665A= Assembly Plant Code= Date Code (Year & Week)= Lot Traceability Code= Specific Device CodeORDERING INFORMATION
See detailed ordering and shipping information on page 2 ofthis data sheet.

© Semiconductor Components Industries, LLC, 2017February, 2023 − Rev. 3

1Publication Order Number:FFSP1665A/DFFSP1665A
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter

Symbol

Value

Unit

VRRM

Peak Repetitive Reverse Voltage

650

V

EAS

Single Pulse Avalanche Energy (Note 1)

81mJ

IF

Continuous Rectified Forward Current @ TC < 135°C

16A

Non-Repetitive Peak Forward Surge Current

TC = 25°C, 10 ms1130

A

TC = 150°C, 10 ms

980

AIF,MaxIF,SM

Non-Repetitive Forward Surge Current

Half−Sine Pulse, tp = 8.3 ms

90

AIF,RM

Repetitive Forward Surge Current

Half−Sine Pulse, tp = 8.3 ms

50

APTOT

Power Dissipation

TC = 25°C150W

TC = 150°C

25W−55 to +175°C

TJ, TSTG

Operating and Storage Temperature Range

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. EAS of 81 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 18 A, V = 50 V.

THERMAL CHARACTERISTICS
SymbolParameter

Value

Unit

RqJC

Thermal Resistance, Junction to Case, Max

1.0°C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
SymbolVF

IR

Parameter
Forward Voltage

Reverse Current

Test Condition

Min

TypMaxUnit

IF = 16 A, TC = 25°C

−

1.50

1.75

V

IF = 16 A, TC = 125°C−

1.62.0IF = 16 A, TC = 175°C

−

1.72

2.4

VR = 650 V, TC = 25°C−−200

VR = 650 V, TC = 125°C

−−

400

VR = 650 V, TC = 175°C−−600mA

QC

Total Capacitive Charge

V = 400 V−52−nCC

Total Capacitance

VR = 1 V, f = 100 kHz−887−pF

VR = 200 V, f = 100 kHz−95−

VR = 400 V, f = 100 kHz−72−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.

ORDERING INFORMATIONPart NumberTop Marking

Package

Packing Method

QuantityFFSP1665A

FFSP1665A

TO−220−2LD

Tube50 Units

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2FFSP1665A
TYPICAL CHARACTERISTICS(TJ = 25°C UNLESS OTHERWISE NOTED)
10−5
IR, Reverse Current (A)IF, Forward Current (A)16128
TJ = 175°C
TJ = 125°C

4

TJ = 75°C

00.0

TJ = 25°C

TJ = −55°C

0.5
1.0
1.5
VF, Forward Voltage (V)10−6

TJ = 25°C
TJ = 175°C

10−7

TJ = 75°C
TJ = 125°C

10−810−9200

2.0Figure 1. Forward Characteristics

PTOT, Power Dissipation (W)IF, Peak Forward Current (A)600 650

160D = 0.190
D = 0.2
D = 0.360

D = 0.530

D = 0.725

D=1507510012515080400255075100125150

TC, Case Temperature (5C)

TC, Case Temperature (5C)

Figure 3. Current Derating

Figure 4. Power Derating

175

10000

Capacitance (pF)60

40200012017580
QC, Capacitive Charge (nC)

300
400500VR, Reverse Voltage (V)Figure 2. Reverse Characteristics

1200TJ = −55°C

200

400

1000

100

100.1600 650

110100650

VR, Reverse Voltage (V)VR, Reverse Voltage (V)Figure 5. Capacitive Charge vs. ReverseVoltage

Figure 6. Capacitance vs. Reverse Voltage

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3FFSP1665A
TYPICAL CHARACTERISTICS (CONTINUED)(TJ = 25°C UNLESS OTHERWISE NOTED)

EC, Capacitive Energy (mJ)

1812600200

400600 650

VR, Reverse Voltage (V)Figure 7. Capacitance Stored Energy

ZqJC, Normalized Thermal
Impedance

21

DUTY CIRCLE−DESCENDING ORDER

0.5
PDM

0.1

0.01
0.01

0.02

0.05

t1

0.2
0.1

t2

NOTES:ZqJC(t) = r(t) × RqJC
RqJC = 1.0°C/W
Peak TJ = PDM × ZqJC(t) + TCDuty Cycle, D = t1 / t2

SINGLE PULSE

0.001
10−610−510−410−310−210−11t, Rectangular Pulse Duration (s)Figure 8. Junction−to−Case Transient Thermal Response CurveTEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
R < 0.1 W
VDD = 50 V
EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))L

Q1

CURRENT
SENSE
DUT

VAVL

R+VDD

ILIL

I V

VDD−t0t1

Figure 9. Unclamped Inductive Switching Test Circuit & Waveform

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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−220−2LD
CASE 340BB
ISSUE O

4.09
3.50
0.36 M

10.67
9.65

A

B A M

B

3.43
2.54

7°
3°

5°
3°
12

8.89
6.86

1.40
0.51

16.51
14.22
9.40
8.38

DATE 31 AUG 2016

6.86
5.84

5°
3°

16.15
15.75

13.40
12.19

6.35 MAX
0.60 MAX

C

14.73
13.60

1.65
1.25

1.91

0.61
0.33

2.54

5.08

2.92
2.03

1.02
0.38
0.36 M

5°
3°

5°
3°

4.80
4.30

DOCUMENT NUMBER:DESCRIPTION:

98AON13832G
TO−220−2LD

C A B

NOTES:
A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K,VARIATION AC,DATED APRIL 2002.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSION AND TOLERANCE AS PER ASME
Y14.5−2009.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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