Monday, September 2
Opening and Plenary Session (Arcrea HIMEJI, Grand Hall)
Opening Session
Session Chair: Meishoku Masahara, Chair, Program Committee
Nobuhiko Nishiyama, Chair, Steering Committee
9:00 Welcome Address

Yasuyuki Miyamoto, C hair, Organizing Committee
9:05 Welcome Address

Tsunenobu Kimoto, President, The Japan Society of Applied Physics
9:10 SSDM Award/SSDM Paper Award Ceremony

Plenary Session
9:30 PL-01

Japan’s Semiconductor Strategy
Hisashi Kanazashi, Ministry of Economy, Trade and Industry
10:15 PL-02

Creating the Future of Compute: The Next Chapter of Moore's Law
Sanjay Natarajan, I ntel Corp.
11:00 Break
11:20 PL-03

Gallium Oxide Electronics - Power, Harsh Environment, and Something New Masataka Higashiwaki, O saka Metropolitan Univ.
12:05 PL-04

Evolution of Chiplet packaging architectures advancing AI and HPC growthDaniel ng, AMD
Lunch
Room A(407, 4th Floor)

Room B(408, 4th Floor)

Room C(409, 4th Floor)

Room D(Medium Hall, 2nd Floor)

01: Advanced CMOS: Material
Science / Process Engineering /Device Technology
A-1:Advanced CMOS: Process
Technology

02: Advanced and Emerging
Memories / New Applications
B-1:Ferroelectric Memory
Materials

03: Heterogeneous and 3D
Integration / Interconnect /MEMS
C-1:Advanced Metallization I

04: Power / High‐speed Devices
and Materials
D-1:Ga2O3 Power Devices

06: Energy Harvesting andConverting Devices and Materials
F-1:Thermoelectric materials
and devices I(14:30-16:00)
Session Chair:
Genji Nakamura(Tokyo Electron Ltd.),
Takashi Matsukawa (AIST)(14:30-15:45)
Session Chair:
Halid Mulaosmanovic(GlobalFoundries),
Atsushi Himeno(Panasonic Holdings Corp.)(14:30-15:45)
Session Chair:
Wei Feng (AIST),
Takashi Matsumoto(Tokyo Electron Technology Solutions Ltd.)(14:30-16:00)
Session Chair:
Kohei Sasaki(Novel Crystal Technology, Inc.),
Masashi Kato
(Nagoya Inst. of Technology)(14:30-15:45)
Session Chair:
Masahiro Nomura(The Univ. of Tokyo),
Yoshitaro Nose (Kyoto Univ.)

14:30 A-1-01 (Invited)
14:30 B-1-01 (Invited)
3D stacked devices and MOL
Materials Development andinnovations for post-Nanosheet Interfacial Engineering for
CMOS scaling
Emerging Ferroelectric○
Memories
Steven Demuynck1, Victor Vega
Gonzalez1, Camila Toledo1, Karen Geun Hyeong Park1, Se Hyun1
1
1
Stiers , Cassie Sheng , Andy Peng , Kim1, ○Min Hyuk Park1, 1. Seoul
Dmitry Batuk1, Maryam Hosseini1, National Univ. (Korea)
Anne Vandooren1, Lucas Lima1,
Naoto Horiguchi1, Serge
Biesemans1, 1. imec (Belgium)

14:30 C-1-01 (Invited)
14:30 D-1-01 (Invited)
Area Selective Deposition to
Pairing Ga2O3 with p-NiO
Facilitate Integration
produces robust power diodes○
for harsh environments
Christophe Vallee1, Anthony
Valenti1, Nicolas Paul Maldonado1, Hehe Gong1,2, Feng Zhou1, Ming
Van Long Nguyen1, shivan Antar1, Xiao2, Yuhao Zhang2, ○Jiandong
Gregory Denbeaux1, Carl Jr
Ye1, 1.Nanjing University (China),
2.
Ventrice1, Marceline Bonvalot2,
Virginia Tech (United States of1.University at Albany (United
America)2.
States of America), Universite
Grenoble Alpes (France)

Room E(401, 4th Floor)

Room F(402, 4th Floor)

14:30 F-1-01 (Invited)
Key issues for developing highperformance thermoelectricmaterials and devices○
Takao Mori1,2, 1. National
Institute for Materials Science(NIMS) (Japan), 2.University ofTsukuba (Japan)

Monday, September 2
Opening and Plenary Session (Arcrea HIMEJI, Grand Hall)




Lunch
Room G(403, 4th Floor)

Room H
Room J(Small Hall, 2nd Floor) (Main Studio, 1st Floor)

Room K(404, 4th Floor)

Room M
Room N(Special Conference Room, 4th Floor) (Studio 1, 1st Floor)

08: Low Dimensional Devices
and Materials
H-1:Device-I

09: Novel Functional / Quantum /Spintronic Devices and Materials
J-1:Qubit I

10: Thin Film Electronics: Oxide/ Non‐single Crystalline / Novel
Process
K-1:Oxide-TFTs I

11: Advanced Materials:
Synthesis / Crystal Growth /Characterization
M-1:Oxide Materials

12: Advanced Circuits / Systems
Interacting with Innovative
Devices and Materials
N-1:Sensor Circuits andSystems(14:30-15:30)
Session Chair:
Masafumi Jo (RIKEN),
Mahito Yamamoto (Kansai Univ.)(14:30-15:30)
Session Chair:
Jun Yoneda (Tokyo Tech),Tomohiro Otsuka(Tohoku University)(14:15-16:00)
Session Chair:
Mamoru Furuta(Kochi Univ. of Technology),
Juan Paolo Bermundo (NAIST)(14:30-16:00)
Session Chair:
Takuya Hoshi(NTT Device Technology Lab.),
Wen-Wei Wu (NYCU)(14:30-15:45)
Session Chair:
Keita Yasutomi (Shizuoka Univ.),
Wataru Saito(Renesas Electronics Corp.)

14:30 M-1-01 (Invited)
Laser-Based Photoemission
Electron Microscopy as a
Nondestructive Imaging Tool
for Ferroelectric Devices○
Hirokazu Fujiwara1, 1.The Univ.
of Tokyo (Japan)

14:30 N-1-01 (Invited)
Digital and Analog Calibration
Techniques for a Global
Shutter CMOS Terahertz
Image Sensor○
Masayuki Ikebe1, Yoshihiro
Komatsu1, Takuto Togashi1,1.
 Hokkaido Univ. (Japan)

14:15 K-1-01 (Invited)
Recent advances in oxide-TFT
technology for next-generation
sustainable electronics○
Kenji Nomura1, 1.UC San Diego(United States of America)
14:30 J-1-01
14:30 H-1-01 (Invited)
The Growth of N-polar AIN for A 300mm Silicon Spin Based
Platform for Quantum
Electronic Applications○
ComputingMarkus Pristovsek1, Pietro○
Pampili2, Itsuki Furuhashi1, Xu
Stefan Kubicek1, Shana Massar1,
Yang1, 1. Nagoya Univ. (Japan),
Clement Godfrin1, Bart Raes1,
2.
Julien Jussot1, Yann Canvel1,
Tyndall National Institute(Ireland)Yannick Hermans1, George
Simion1, Alexander Grill1, Danny
Wan1, Kristiaan De Greve1,1.IMEC (Belgium)
14:45 K-1-02
14:45 J-1-02
Amorphous TeO2 as P-type
Bringing Superconducting Al
Wide-gap Oxide BEOL
Overlap Josephson Junction
Semiconductor
Fabrication from Lab to Fab○○Shana Massar1, Tsvetan Ivanov1,
John Robertson1, Xuewei
1
1
Yann Canvel , Daniel Perez Lozano , Zhang1, Qingzhong Gui2,
Jacques Van Damme1,2, Stefan
Yuzheng Guo2, 1. Cambridge Univ.
Kubicek1, Julien Jussot1, Diziana(UK), 2.Wuhan Univ. (China)
Vangoidsenhoven1, Yannick
Hermans1, Antoine Pacco1, Ju-Geng
Lai1, Rohith Acharya1, Vadiraj Rao1,
Massimo Mongillo1, Anton Potočnik1,
Danny Wan1, Kristiaan De Greve1,2,
1.IMEC (Belgium), 2.Katholieke Univ.
Leuven (Belgium)

Monday, September 2
Room A(407, 4th Floor)

Room B(408, 4th Floor)

Room C(409, 4th Floor)

Room D(Medium Hall, 2nd Floor)

01: Advanced CMOS: Material
Science / Process Engineering /Device Technology
A-1:Advanced CMOS: Process
Technology

02: Advanced and Emerging
Memories / New Applications
B-1:Ferroelectric Memory
Materials

03: Heterogeneous and 3D
Integration / Interconnect /MEMS
C-1:Advanced Metallization I

04: Power / High‐speed Devices
and Materials
D-1:Ga2O3 Power Devices

06: Energy Harvesting andConverting Devices and Materials
F-1:Thermoelectric materials
and devices I

15:00 C-1-02
Intercalated Multilayer
Graphene / Nickel Hybrid
Conductor for RF Device
Scaling○Kazuyoshi Ueno1, Kouta
Masukawa1, Shinichi Tanaka1,
1.Shibaura Inst. of Tech. (Japan)

15:00 D-1-02
Demonstration ofβ-(Al0.17Ga0.83)2O3 metalsemiconductor field-effecttransistors with low contacts
resistance and high draincurrent density○
Ryo Morita1, Aboulaye Traore1,2,
Hironori Okumura1, Fenfen
Fenda Florena1, Yun Jia1,
Takeaki Sakurai1, 1. Univ. of
Tsukuba (Japan), 2.J-FAST(Japan)

15:00 F-1-02
Record-High Power Factors in
Polycrystalline Ge Thin Films
for Flexible Thermoelectric
Devices○
Koki Nozawa1, Masayuki
Murata2, Takashi Suemasu1,
Kaoru Toko1, 1. University ofTsukuba (Japan), 2.AIST (Japan)

15:15 C-1-03
15:15 D-1-03
15:15 A-1-03
15:15 B-1-03
CFET-compatible Backside
Optimization of Characteristics
Demonstration of Poly Gate
New insight of ferroelectricin NiOx/β-Ga2O3
Cut Process at Tight Gate Pitch Hf0.5Zr0.5O2 properties under Connection using DualDamascene Integration Scheme Heterojunction Diodes withof 50nm and High Gates Aspect cryogenic
comparing W versus Mo
Ratio for Advanced Device
Surface Treatment
temperatures in integrated○
Metallization
Architectures
ferroelectric capacitors
Dinghe Liu1, Zeyulin Zhang1,○○
Hao Chen1, Dazheng Chen1,
Xiuju Zhou1, Zheng Tao 1, Hans ○Flavien Berthaud1, LiamAnne Vandooren1, Stefaan Van
Mertens1, Emmanuel Dupuy1,
Hosier1, Niccolo Castellani1,
Huylenbroeck1, Tanushree
Chunfu Zhang1, Yue Hao1,
1.
Anabela Veloso1, Boon TeikJean Rottner1, Valentina Méli1,
Sarkar1, Thomas Chiarella1,
 Xidian Univ. (China)
1
1
1
1
1
Chan , Sujith Subramanian ,Laurent Grenouillet , Julie
Anshul Gupta , Michele Stucci ,1
1
1
1
Naoto Horiguchi , Serge
Laguerre , Catherine Carabasse , Liesbeth Witters , Jan Willlem
Biesemans1, Elisabeth
Jean Coignus1, Mikaël Cassé1,
Maes2, Camila Toledo de22
Camerotto , Haseeb Kazi , Ziad Simon Martin1, 1. Univ. Grenoble Carvalho Cavalcante1,
El Otell2, 1.IMEC (Belgium),
Alpes, CEA, Leti F-38000
Harinarayanan Puliyalil1, Farid
2.
Sebaai1, Koen D'have1, Nancy
Lam Res. Corp. (United States Grenoble (France)of America)
Heylen1, Sujan Kumar Sarkar1,
Andrea Mingardi1, Serena
Iacovo1, Pallavi Puttarame
Gowda1, Anabela Veloso1,
Nicolas Jourdan1, Michael
Givens2, Sujith Subramanian1,
Steven Demuynck1, Naoto
Horiguchi1, Zsolt Tokei1, Serge
Biesemans1, Chiyu Zhu 3, Harsh
Vardhan Bana 2, Hameeda
Jagalur Basheer 2, 1. imec
(Belgium), 2.ASM Leuven(Belgium), 3.ASM Helsinki(Finland)

15:15 F-1-03
Fabrication of Planar
Thermoelectric Generators
using Phosphorus-doped
Silicon Nanocrystals/
Amorphous Silicon Composite
Films○
Yasuyoshi Kurokawa1, Keisuke
Shibata1, Shinya Kato2, Masashi
Kurosawa1, Satoru Miyamoto1,
Takashi Itoh1, Noritaka Usami1,
1.Nagoya Univ. (Japan), 2.Nagoya
Inst. Tech. (Japan)

15:30 B-1-04
15:30 C-1-04
Universal Temperature-Strain Tungsten Carbide Hard Mask
Phase Diagram of HfxZr1-xO2
Performance in Supervia andHigh Aspect Ratio Patterning
Films
Towards to Ferroelectric Phase for BEOL Advanced
Interconnects
Engineering○
Tianning Cui1, Zhipeng Xue1,
Daniel Montero1, Philippe11Danyang Chen , Yuyan Chen ,Marien1, Yannick Hermans1,
Jingquan Liu1, Mengwei Si1,
Fulya Ulu Okudur1, Mattia○
Xiuyan Li1, 1.Shanghai Jiao Tong Pasquali1, Syamashree Roy1,
University (China)
Chen Wu1, Nunzio Buccheri1,
Victor Vega-Gonzalez1,
Harinarayanan Puliyalil1,
Quyang Lin1, Gilberto Casillas1,
Jef Geypen1, Alfonso Sepulveda1,
Frederic Lazzarino1, Seongho
Park1, Zsolt Tokei1, 1. imec
(Belgium)

15:30 F-1-04
Controlling the conduction typeof thermoelectric (Zn1-xCdx)
SnAs2 material○
KOKI NAKASHIMA1, Shoma
Miura1, Yuichi Hirai1, Kensuke
Nishioka1, Akira Nagaoka1,1.
 University of Miyazaki (Japan)

15:00 B-1-02
15:00 A-1-02
Understanding of Imprint
Source-Drain Damage of
Behavior of Ferroelectric
Monolithic Complementary
Hf0.5Zr0.5O2 thin Film: Role ofField Effect Transistors: A
Comprehensive Study ofCharge Injection and Field
Failure Modes and Mitigation Cycling○
Strategies
Zhenhong Liu1, Zuochen Cai1,○
Mitsuru Takenaka1, Shinichi
Camila Toledo de Carvalho
Cavalcante1, Steven Demuynck1, Takagi1, Kasidit Toprasertpong1,
1.
Emmanuel Dupuy1, Thomas The University of Tokyo (Japan)
Chiarella1, BT Chan1, Pallavi
1
1
Puttarame Gowda , Il Gyo Koo ,Hans Mertens1, Anne Vandooren1,
Farid Sebaai1, Jef Geypen1,
Sujith Subramanian1, Lucas
Petersen Barbosa Lima1, Serge
Biesemans1, Naoto Horiguchi1,
1.imec, Leuven, Belgium(Belgium)

15:30 A-1-04
Low-Thermal Budget
Activation for 3D Integration
by Green Nanosecond Laser○
Hongxu Liao1, Yandong Ge1,
Haixia Li1, Lanyi Xie2, Qing
Wang1, Ming Li1,3, Ru Huang1,3,
1.School of Integrated Circuits,
Peking University (China),
2.
Department of Energy andResources Engineering, Peking
University (China), 3.Beijing
Advanced Innovation Center for
Integrated Circuits (China)

15:45 A-1-05
Transferring Compressive or
Tensile Stress from Stressors to
Si Layers: A Novel Approach○
Pablo Acosta Alba1, Mayara
Auricchio1, Patrice Gergaud1,
Jean-Michel Hartmann1, Shay
Reboh1, 1. Univ. Grenoble ALpes,
CEA-LETI (France)

15:30 D-1-04
Characterization of trap statesin β-(AlxGa1-x)2O3/Ga2O3
modulation-doped field effecttransistors by deep leveltransient spectroscopy○
Yun Jia1, Fenfen Fenda
Florena1, Ryo Morita1, Aboulaye
Traoré1,2, Hironori Okumura1,
Takeaki Sakurai1, 1. Univ. of
Tsukuba (Japan), 2.JapaneseFrench Lab. for Semiconductor
Physics and Technology (Japan)

15:45 D-1-05
β-Ga2O3 Schottky Barrier
Diodes with Surface Etching
and Piranha Solution
Pre-treatment: Achieving Nearideal Forward and Reverse
Characteristics
Haodong Hu1,2, Yibo Wang1,2,
Xiaole Jia1, ○Chenyu Liu1, Cizhe
Fang1,2, Xiaoxi Li1,2, Bochang
Li1,2, Zhengdong Luo1,2, Yan
Liu1,2, Yue Hao1,2, Genquan
Han1,2, 1.School ofMicroelectronics, Xidian Univ.
(China), 2.Hangzhou Inst. of
Tech., Xidian Univ. (China)

Room E(401, 4th Floor)

Room F(402, 4th Floor)

Monday, September 2
Room G(403, 4th Floor)

Room H
Room J(Small Hall, 2nd Floor) (Main Studio, 1st Floor)

Room K(404, 4th Floor)

Room M
Room N(Special Conference Room, 4th Floor) (Studio 1, 1st Floor)
11: Advanced Materials:
Synthesis / Crystal Growth /Characterization
M-1:Oxide Materials

12: Advanced Circuits / Systems
Interacting with Innovative
Devices and Materials
N-1:Sensor Circuits andSystems

08: Low Dimensional Devices
and Materials
H-1:Device-I

09: Novel Functional / Quantum /Spintronic Devices and Materials
J-1:Qubit I

15:00 H-1-02
In-Depth Understanding of
Back-switching Dynamics in
Anti-ferroelectric HZO for
Reservoir Computing○
Yufei Shi1, Ngoc Thanh Duong1,
Yu-Chieh Chien1, Kah-Wee Ang1,
1.
 National Univ. of Singapore(Singapore)

15:00 M-1-02
15:00 N-1-02
15:00 J-1-03
15:00 K-1-03
Effects of Millisecond Flash
Performance improvement by
Large-Scale Characterization In/Ga Ratio and Annealing
multi-layer on-pixel polarizer
Classifying Double Quantum
Temperature Influence on IGO Lamp Annealing on the
Polarization andstructure using 0.35-µm CMOS
Dots in Isoelectronic-TrapCrystallization
○
1,2,3
1,3
Crystallization in Thin Al:HfO2 process for high-sensitivity
Assisted Tunnel Field-EffectKuo Zhang , Jiayi Wang ,31,3electro-optic imaging system
Transistors
Ziheng Bai , Yang Xu , Nannan Films○○
Yusuke Chiashi1, Takumi Inaba1, You1,3, Yuxuan Li1,2,3, Ling Li2,3, Di ○Hideaki Tanimura1,2, Tomoya
Ryoma Okada1, Maya Mizuno2,
1
1
2,3
2,3
1
2
Atsushi Yagishita , Makoto Kato , Geng , Shengkai Wang ,Mifune , Yuma Ueno , Shinichi
Hironari Takehara1, Makito
1.
Tomohiro Ishikawa1, Oka High-Frequency High-Voltage Kato2, Takumi Mikawa2, Hironori Haruta1, Hiroyuki Tashiro1, Jun
Hiroshi1, Kimihiko Kato1,
Device and Integrated Circuits
Fujisawa1, Seiji Nakashima1,
Ohta1, Kiyotaka Sasagawa1,
Hidehiro Asai1, Minoru Ogura1, Research and Development
1.Univ. of Hyogo (Japan),1.Nara Institute of Science2.
Center, Instit. of
Shota Iizuka1, Takahiro Mori1,
Technolgy (Japan), 2.National
SCREEN Semiconductor
Microelectronics, Chinese
1.Advanced Industrial Science
Solutions (Japan)
Institute of Information andCommunications Technology
amd Technology (AIST) (Japan) Academy of Sci. (China), 2.Univ.
(Japan)of Chinese Academy of Sci.
(China), 3.Key Lab. of
Fabrication Technologies for
Integrated Circuits, Chinese
Academy of Sci. (China)

15:15 H-1-03
15:15 J-1-04
All-2D-Materials Floating Gate Time-Efficient Tuning of a
Structure For Synaptic Device Quadruple Quantum Dot into○
Hailiang Wang1, Qian He1, Yishu single dot regime by using aLong Short-Term Memory
Zhang1, Yang Xu1, Bin Yu1,
Neural Network1.Zhejiang University (China)○
Ehsan Alizadeh Kashtiban1,
Takafumi Fujita1, Akira Oiwa1,
1.Osaka Univ. (Japan)

10: Thin Film Electronics: Oxide/ Non‐single Crystalline / Novel
Process
K-1:Oxide-TFTs I

15:15 M-1-03
Low-temperature Selective
Growth of Dense and Oriented
Heteroepitaxial ZnO
Nanowires on Au / Si Substratewith Wafer-Scale Periodic
Growth Window Arrays○
Takumi Noro1, Kentaro
Watanabe1,2, 1.Shinshu Univ.
(Japan), 2.IFES, Shinshu Univ.
(Japan)

15:15 N-1-03
Self-Resetting CMOS Image
Sensor with Signal-to-Noise
Ratio of over 70 dB throughout
the Entire Imaging Area○
Subaru Iwaki1, Kiyotaka
Sasagawa1, Yoshinori Sunaga1,
Hironari Takehara1,2, Makito
Haruta1,3, Hiroyuki Tashiro1,4, Jun
Ohta1, 1.Nara Inst. of Sci. andTech. (Japan), 2.Nara Advanced
Imaging Tech., Co., Ltd. (Japan),3.
Chitose Inst. of Sci. and Tech.
(Japan), 4.Kyushu Univ. (Japan)

15:30 M-1-04
15:30 K-1-05
Enhancement in Mobility and Layer-by-layer Synthesis of
Functional Oxides by Digitally
Stability in Thin Film
Processed DC Sputtering withTransistor Based on InPrO/
Alternating Surface Oxidation
InPrO Homojunction○
Structure
Hideo Isshiki1, Daiki
1 ○1
Min Guo , Xiaoci Liang , Chuan Yamashita1, Mehdi Ali1, Masaya
Liu1, 1.Sun Yat-sen Univ. (China) Takeuchi1, Taiga Hokkezu1, Yuki
Takamatsu1, Shoji Kiyota1,
Satoshi Fujiya1, Yasuhito
Tanaka1,2, Shinichiro saisho1,2,1.
 The University of ElectroCommunications (Japan),
2.
Shincron Co.Ltd. (Japan)

15:30 N-1-04
An Area-Efficient Sub-nJ/
Conversion Temperature-toDigital Converter
Po-Wei Lai1, Chung-Tai Wei1,○
Hongchin Lin1, 1. National Chung
Hsing University (Taiwan)

15:15 K-1-04"Enhancing Stability andMobility in TFTs throughIndium-Tungsten-Oxide andIndium-Gallium-Zinc-Oxide
Heterojunction Engineering:
Exploring ISFET
Applicability"○
Seong-Hwan Lim1, Dong-Gyun
Mah1, Jin-Wook Shin2, JongHeon Yang2, Won-Ju Cho1, 1. The
Univ. of Kwangwoon (Korea),
2.
The Lab. of ETRI (Korea)

15:45 M-1-05 (Late News)
15:45 K-1-06 (Late News)
Study of the Dependence ofTheoretical Study on
Effective Barrier Height on
Structural and Electronic
Thickness of HfO2, SiO2, Y2O3,
Properties of Interstitial
Oxygen Defects in Amorphous and Al2O3 Films in MetalIndium Gallium Oxide for
Ultra-Thin-InsulatorTransistor Reliability
Germanium Structures○○
Chitra Pandy1, Masaharu
Yajun FENG1, Noboru Shimizu1,
Kobayashi2, 1. The University of
Keisuke Yamamoto1, Dong
Tokyo (Japan), 2.The University of Wang1, 1. IGSES,Kyushu
Tokyo (Japan)
University (Japan)

Monday, September 2
Room A(407, 4th Floor)

Room B(408, 4th Floor)

Room C(409, 4th Floor)

Room D(Medium Hall, 2nd Floor)

Room E(401, 4th Floor)

Room F(402, 4th Floor)

01: Advanced CMOS: Material
Science / Process Engineering /Device Technology
A-2:Innovative devices andSensing technology

02: Advanced and Emerging
Memories / New Applications
B-2:In-Memory andUnconventional Computing I

03: Heterogeneous and 3D
Integration / Interconnect /MEMS
C-2:MEMS and Advanced
Metallization I

04: Power / High‐speed Devices
and Materials
D-2:Diamond Devices

05: Photonics: Devices /Integration / Related Technology
E-2:Integrated Light Source
and Related Technology

06: Energy Harvesting andConverting Devices and Materials
F-2:Thermoelectric materials
and devices II(16:15-17:30)(16:15-17:30)
Session Chair:
Session Chair:
Hidetoshi Oishi
Ming-Hsiu Lee(Sony Semiconductor Solutions Corp.), (Macronix International Co., Ltd.),
Shoichi Kabuyanagi
Xu Bai(KIOXIA Corp.)(NanoBridge Semiconductor, Inc.)(16:15-16:45)
Session Chair:
Takeyasu Saito(Osaka Metropolitan Univ.),
Christian Dussarrat (Air Liquide)(16:30-17:30)
Session Chair:
Norio Tokuda (Kanazawa Univ.),
Masashi Kato
(Nagoya Inst. of Technology)(16:15-17:30)
Session Chair:
Mizuki Shirao(Mitsubishi Electric),
Karim Hassan (CEA-LETI)(16:15-17:30)
Session Chair:
Shinnya Kato
(Nagoya Inst. of Technology),
Takuya Hoshii (Tokyo Tech)

16:15 B-2-01 (Invited)
16:15 A-2-01
Ferroelectric Neuromorphic
On-Wafer Polarity-Specific
Devices and System
Response Plasma Charging
Implementations
Recorder○with Fin-Coupling Structure by Thomas Kämpfe1, 1. Fraunhofer
FinFET Technology
Institute for Photonic
Han-Lin Huang1, ○Wei Chang1,
Microsystems (Germany)
2
2
Yu-Der Chih , Jonathan Chang ,1
Chrong-Jung Lin , Ya-Chin
King1, 1. National Tsing Hua Univ.
(Taiwan), 2.Taiwan
Semiconductor Manufac.
Company (Taiwan)

16:15 C-2-01 (Invited)
Evaluation Platforms for
Next-Generation
Semiconductor Packaging
Technologies○
Hirokazu Noma1, 1.Resonac
Corp. (Japan)

16:30 A-2-02
1T EUV/DUV Detector in Fully
Compatible 16nm FinFET
Logic Process○
Wei-Hwa Lin1, Ting-Kai Huang2,
Yue-Der Chih3, Yih Wang3,
Jonathan Chang3, Ya-Chin King1,
Chrong Jung Lin1,2, 1. Institute ofElectronics Engineering, National
Tsing Hua Univ. (Taiwan), 2.College
of Semiconductor Research,
National Tsing Hua Univ. (Taiwan),
3.
Design Technology Platform,
Taiwan Semiconductor Manufac.
Company (Taiwan)

16:15 F-2-01
16:15 E-2-01 (Invited)
Reduction of Thermal
Heterogeneously Integrated
Conductivity in Silicon Thin
Membrane Lasers on Si andThin-film Lithium Niobate Platforms Film by Super-lattice Interface○
1
1
and Phononic Crystal
Yoshiho Maeda , Hidetaka Nishi ,Nanostructures
Takuma Aihara1, Takuro Fujii1,
1
Sota Koike1, Ryoto Yanagisawa1,
Tatsurou Hiraki , Nikolaos1
Panteleimon Diamantopoulos , Koji Takahiro Inoue2, Kentarou
Takeda1, Hiroki Sugiyama1,
Sawano2, ○Masahiro Nomura1,
Tomonari Sato1, Yasutomo Ota3,2,
1.Inst. of Indus. Sci., the Univ. of
Satoshi Iwamoto4, YasuhikoTokyo (Japan), 2.Tokyo City Univ.
Arakawa2, Shinji Matsuo1, 1. NTT(Japan)Corp. (Japan), 2.Nano Quine, The
Univ. of Tokyo (Japan), 3.Keio Univ.
(Japan), 4.The Univ. of Tokyo (Japan)
16:30 F-2-02
Optimizing the Wiring Layoutof Silicon Integrated
Thermoelectric Devices forEnhancing Maximum
Performance○
Md Mehdee Hasan Mahfuz1,
Suhei Arai1, Takeo Matsuki1,
Watanabe Takanobu1, 1. Waseda
University (Japan)

16:30 D-2-01 (Invited)High Power and HighFrequency Diamond Field
Effect Transistors○
Hiroshi Kawarada1,2, Ken
Kudara1, Masakazu Arai1, Akira
Takahashi1, Kousuke Ota1,2,
Tatsuya Fujishima2, 1. Waseda
Univ. (Japan), 2.Power Diamond
Systems (Japan)

16:45 A-2-03 (Late News)
Efficient Reverse Current
Reduction of GeSn-Based pn
Diodes by Surface Passivationof ALD-GeO2 and Al2O3
Stacked Structure○
Yoshiki Kato1, Mitsuo
Sakashita1, Masashi Kurosawa1,
Osamu Nakatsuka1,2, Shigehisa
Shibayama1, 1. Grad. Sch. Eng.,
Nagoya Univ. (Japan), 2.IMaSS.,
Nagoya Univ. (Japan)

16:45 B-2-02
1S1R Multi-Level-Cell for
Dense Quantized Recurrent
Spiking Neural Network
Inference Computing○
Joel Minguet Lopez1, Manon
Dampfhoffer2, Gabriele
Navarro1, Mathieu Bernard1,
Catherine Carabasse1, Niccolo
Castellani1, Thomas Magis1,
Chiara Sabbione1, Gabriel
Molas1, François Andrieu1,1.
 Univ. Grenoble Alpes, CEA, Leti
(France), 2.Univ. Grenoble Alpes,
CEA, List (France)

17:00 A-2-04
High-speed, Low-power,
Ultra-scaled1T-pTRNG Array
with 10-ns of p-bits
Generation, 0.3V of theReading-voltage, and400-Mbits of the Throughput○
P.H. Huang1, S.Y. Huang1, Y.-H.
Lin1, K.H. Chang1, T.H. Shen1,
R.Y. Lyu1, K.Y. Lee1, E Ray Hsieh
Hsieh1, 1.National Central
University (Taiwan)

17:00 B-2-03
Analog In-Memory SearchTechnology Based on
Automotive Grade NOR Flash
Memory○Po Hao Tseng1, Feng-Ming Lee
Lee1, Tian-Cig Bo1, Yu-Hsuan
Lin1, Chen-Chi Liu1, Ming-Hsiu
Lee1, Kuang-Yeu Hsieh1,
Keh-Chung Wang1, Chih-Yuan
Lu1, 1. Macronix International
Co., Ltd. (Taiwan)

17:15 A-2-05
17:15 B-2-04
Development of Curved CMOS A Novel Decrement ProgramImage Sensors by Using SOIVerify Scheme of a 2T NOR
Layer Transfer
Flash eNVM-Based In-Memory○
1Computing Technology
Masahide Goto , Shigeyuki
1
1 1.
○
Imura , Hiroto Sato ,  NHK Sci.
Yu-Hsuan Lin1, Yu-Yu Lin1,& Tech. Res. Labs. (Japan)
Feng-Min Lee1, Po-Hao Tseng1,
Pei-Ying Du1, Chih-Chieh Lin1,
Dai-Ying Lee1, Ming-Hsiu Lee1,
Kuang-Yeu Hsieh1, Keh-Chung
Wang1, Chih-Yuan Lu1,
1.Macronix International Co., Ltd.
(Taiwan)

16:45 E-2-02
16:45 F-2-03
Enhanced Light Emission and Scaling Effect of Silicon-based
Linewidth Narrowing in
Micro Thermoelectric Device
Er-doped Gd2O3 Microringwith Cavity○
Resonators
Takuya Miura1, Md Mehdee○
11Hasan Mahfuz1, Takeo Matsuki1,
Xuejun Xu , Tomohiro Inaba ,Takuma Aihara2, Atsushi
Takanobu Watanabe1, 1. Waseda
Ishizawa3, Takehiko Tawara3,
Univ. (Japan)
Haruki Sanada1, 1.NTT Basic Res.
Labs. (Japan), 2.NTT Device
Tech. Labs. (Japan), 3.Nihon
Univ. (Japan)

17:00 E-2-03
InP Membranes Laterally
Grown on Si-Photonics 220 nm
SOI Platform○
Yao Chen1, Yu Han1, Hui Dong
Fu1, Zhi Ying Zhao1, Jiang Yun
Jin1, Yuan Si Yu1, 1. The Univ. of
Sun Yat-sen (China)

17:00 F-2-04
Identification of Temperature
Difference Across the
Thermoelements of an
Integrated Micro
Thermoelectric Device○
Ryuichiro Arayama1, Takuya
Miura1, Md Mehdee Hasan
Mahfuz1, Takeo Matsuki1,
Takanobu Watanabe1, 1. Waseda
Univ. (Japan)

17:15 D-2-03
17:15 E-2-04
Diamond Photoconductive
Design of Broadband
Switch with Nitrogen Doping to Dispersion Compensation
Regulate Transient Response
Characteristics of Photonic
and its Microwave Applications Crystal Slow-light Waveguide○11
by Lightweight Machine
Hanpeng Zhang , Min Xie ,Learning
Jingliang Liu2, Xiangjin Chen2,
1
1○
Xiaoli Lu , Xiaohua Ma , Yue
Yuchen Zhao1,2, Nao Harada1,
1 1.
Hao ,  Xidian Univ. (China),
Satoshi Iwamoto1, 1.The Univ. of2.
Tokyo (Japan), 2.Xi'an Univ. of
The 13st Inst. of China
Electronics Tech. Group Corp.
Tech. (China)(China)17:15 F-2-05
Thermoelectric properties of
CMOS-compatible GeSn binary
alloys at room temperature○
Jhonny Tiscareno Ramirez1,
Omar Concepción1, Thomas
Classen1, Zoran Ikonic2,
Francisco Rivadulla3, Detlev
Grützmacher1, Dan Buca1,
1.
 PGI-9 Forschungszentrum
Jülich (Germany), 2.Univ. of
Leeds (UK), 3.Univ. de Santiago
de Compostela (Spain)

17:00 D-2-02
Improvement of the Contact
Resistance and Subthreshold
Swing of the (001) C-H
Diamond MOSFETs with
Heavily Boron Doped Layer○
Ryosuke Yamamoto1, Kento
Narita1, Kosuke Ota1,2, Nobutaka
Oi1,2, Atsushi Hiraiwa1, Tatsuya
Fujishima2, Hiroshi
Kawarada1,2,3, 1. Waseda Univ.
(Japan), 2.Power Diamond
Systems, Inc. (Japan), 3.Kagami
Memorial Research Institute forMaterials Science andTechnology (Japan)

18:30-20:30 Banquet (at World Heritage “Himeji Castle”)

Monday, September 2
Room G(403, 4th Floor)

Room H
Room J(Small Hall, 2nd Floor) (Main Studio, 1st Floor)

Room K(404, 4th Floor)

Room M
Room N(Special Conference Room, 4th Floor) (Studio 1, 1st Floor)

09: Novel Functional / Quantum /Spintronic Devices and Materials
J-2:Qubit II

10: Thin Film Electronics: Oxide/ Non‐single Crystalline / Novel
Process
K-2:Oxide-TFTs II

11: Advanced Materials:
Synthesis / Crystal Growth /Characterization
M-2:Characterization andDevice Applications(16:15-17:15)(16:15-17:30)
Session Chair:
Session Chair:
Takuo Sasaki (QST),
Takafumi Fujita (Osaka Univ.),
Yusuke Hoshi (Tokyo City Univ.) Tokuro Hata (Tokyo Tech)(16:15-17:30)
Session Chair:
Jun Koyama(Semiconductor Energy Lab.),Wenchang Yeh (Shimane Univ.)(16:15-17:30)
Session Chair:
Yoriko Tominaga(Hiroshima Univ.),
Shingo Ogawa(Toray Research Center, Inc.)

08: Low Dimensional Devices
and Materials
H-2:Characterization-I

16:15 M-2-01 (Invited)Three-Level Charge Pumping
Technique for SiC-MOS
Interface Characterization○
Hiroshi Yano1, 1. Univ. of Tsukuba(Japan)

16:15 H-2-01 (Invited)
Photonic III-V semiconductor
nanowires on Si toward wafer
scale functionalization○
Fumitaro Ishikawa1, 1. Hokkaido
Univ. (Japan)

16:15 K-2-01 (Invited)
16:15 J-2-01 (Invited)High Mobility Thin film
New material-based
approaches in quantum devices Transistors for Three○
1 1.
Dimensional LSIsfabricated byTomohiro Otsuka ,  Tohoku
ALD process
Univ. (Japan)
Takanori Takahashi1, ○Yukiharu
Uraoka1, 1.Nara Institute of
Science and Technology (Japan)

16:45 H-2-02
A Monte Carlo method toreproduce anisotropic size
effect on electrical resistivity insingle-crystalline nanoscale
metallic wires○
Takashi Kurusu1, Hiroyoshi
Tanimoto1, Nobutoshi Aoki1,
Masaru Kito1, Kazuya Ohuchi1,
1.Kioxia Corp. (Japan)

16:45 J-2-02
16:45 K-2-02
16:45 M-2-02
Blockade Lifetime of a
PEALD IGZO TFT
Time-dependent dielectric
Multi-hole Spin State in Silicon Implemented Inverters andbreakdown characterization of
Quantum Dots
Ring Oscillators Suitable forbulk boron nitride films in○
1
Backend-of-Line Functional
sp2-phase prepared by a
Chihiro Kondo , Raisei
1
1
Mizokuchi , Go Sakamoto , Ryuta Circuits
reactive plasma assisted coating
Tsuchiya2, Toshiyuki Mine2, Dai ○Wenhui Wang1, Meishan Zhang1, Jun method
Hisamoto2, Hiroyuki Mizuno2,
Lan1, Xuewei Feng2, Panpan Zhang3, ○Yuya Asamoto1, Masao Noma2,
Jun Yoneda1, Tetsuo Kodera1,
Kai Chen1, Mei Shen1, Feichi Zhou1, Shigehiko Hasegawa3, Michiru1.
 Tokyo Tech (Japan), 2.R&D
Longyang Lin1, Yida Li1, 1. Southern Yamashita4, Keiichiro Urabe1,
Group, Hitachi Ltd (Japan)
University of Science andKoji Eriguchi1, 1.Kyoto Univ.
Technology (China), 2.Shanghai Jiao (Japan), 2.Shinko Seiki Corp. Ltd.
Tong University (China), 3.Beijing(Japan), 3.Osaka Univ. (Japan),4.
University of Posts andHyogo Prefectural Inst. Technol.
Telecommunications (China)(Japan)

17:00 H-2-03
The carrier injection
characteristic of AC-driven
monolayer WSe2 light transistor○
Chiao-Yun Chang1,2, Ya-Hui
Chang2,3, Yen-Shou Lin2,3, Zheng-Zhe
Chen2,4, Konthoujam James Singh2,
Hsiang-Ting Lin2, Shih-Yen Lin2,4,
Hao-Chung Kuo3, Min-Hsiung
Shih2,3,5, 1. National Taiwan Ocean
University (Taiwan), 2.Academia
Sinica (Taiwan), 3.National Yang
Ming Chiao Tung University(Taiwan), 4.National Taiwan
University (Taiwan), 5.National Sun
Yat-sen University (Taiwan)

17:00 J-2-03
Proposal to implement
single-qubit logical operations
on the binomial code without
ancillary qubits○
Yuki Tanaka1,2, Yuichiro Mori2,
Yuta Shingu3, Aiko Yamaguchi2,4,Tsuyoshi Yamamoto2,4, Yuichiro
Matsuzaki1, 1. Chuo Univ.
(Japan), 2.AIST (Japan), 3.Tokyo
Univ. of Sci. (Japan), 4.NEC
Corp. (Japan)

17:15 H-2-04
Prediction of Edge Structure
Dependence on Carrier
Mobility in SiC6 and GeC6
Nanoribbons by FirstPrinciples Calculations○
kota iwaki1, yoshiyuki egami2,
1.Grad. Sch. Eng., Hokkaido Univ.
(Japan), 2.Fac. Eng., Hokkaido
Univ. (Japan)

17:00 M-2-03
17:00 K-2-03
Insight into the Physical Origin Nondestructive Evaluation of
Thermal-Process-Inducedof NBIS in ALD IGZO
Change of Sn/Cu/Ni Plating
Transistors○
Thin Film Stacks Based on
Liankai Zheng1, Yuyan Fan1,
EDX Measurement andYulong Dong1, Xiuyan Li1,
Bayesian Inference
Mengwei Si1, 1.Shanghai Jiao○
Tong Univ. (China)
Yutaka Hoshina1, 1. Sumitomo
Electric Industries, Ltd. (Japan)

17:15 M-2-04
17:15 K-2-04
Rapid Microwave Synthesis of
In-situ AlOx Passivation on
Solution-Processed a-IGZO
Extremely Thin 2-nm InOx
FETs for Mobility and Stability Thin-Film Transistors forHigh-Performance pH Sensing
Improvement○○
Chia-Tsong Chen1, Wen Hsin
Ki-Ju Park1, Won-Ju Cho1, 1. The
1
1
Chang , Toshifumi Irisawa ,Univ. of Kwangwoon (Korea)
Tatsuro Maeda1, 1.AIST (Japan)

18:30-20:30 Banquet (at World Heritage “Himeji Castle”)

Tuesday, September 3
Room A(407, 4th Floor)

Room B(408, 4th Floor)

Room C(409, 4th Floor)

Room D(Medium Hall, 2nd Floor)

Room E(401, 4th Floor)

02: Advanced and Emerging
Memories / New Applications
B-3:Ferroelectric Devices

04: Power / High‐speed Devices
and Materials
D-3:Si-related Devices

05: Photonics: Devices /Integration / Related Technology
E-3:Si Photonics(9:00-10:15)
Session Chair:
Laurent Grenouillet (CEA-Leti),
Kouichi Nagai(Fujitsu Semiconductor Memory Solution Ltd.)(9:00-10:00)
Session Chair:
Tsuyoshi Kachi(Toshiba Device & storage),
Shinsuke Harada (AIST)(9:00-10:15)
Session Chair:
Hideki Ono (OKI),
Xuejun Xu (NTT Corp.)

9:00 B-3-01 (Invited)
HfO2-based Ferroelectric
Capacitors for Non-Volatile
Memory:Going from Single Devices toMemory Arrays○
Ruben Alcala1, Roberto Guido1,
Pramoda Vishnumurthy1, Alfred
Kersch2, Thomas Mikolajick1,
Uwe Schroeder1, 1. NaMLab(Germany), 2.Univ. of Applied
Sciences (Germany)

9:00 E-3-01 (Invited)
9:00 D-3-01
High-Frequency Dynamics in
The Reduction of Reverse
Recovery Current in RC-IGBT Silicon Photonic Modulators○
by Controlling Hole Injection
Wei Shi1, Erwan Weckenmann1,
from IGBT Region with
Alireza Geravandand1,
Partially Extended N-emitter
Abdolkhalegh Mohammadi1, Zibo○
Zheng1, Simon Levasseur1, Leslie
Daiki Yoshikawa1, Kazutoshi
Nakamura1, Yusuke Kawaguchi1, Rusch1, 1.Université Laval
Shoko Hanagata1, Shunta Murai1, (Canada)
Norio Yasuhara1, Kenichi
Matsushita1, Takeshi Suwa1,
Keiko Kawamura1, Seiji
Inumiya1, 1. Toshiba Electronic
Devices & Storage Corporation(Japan)9:15 D-3-02
Mitigating Self-Turn-On in
Scaled CSTBT: A Focus on
Poly-Si Resistivity○
Srikanth Gollapudi1, Ichiro
Omura1, 1. Kyushu Institute ofTechnology (Japan)

9:30 B-3-02
Unipolar Polarization
Switching and High-endurance
Operation of HZO/Si
Anti-ferroelectric FETs○
Shin-Yi Min1, Kasidit
Toprasertpong1, Mitsuru
Takenaka1, Shinichi Takagi1, 1.The
Univ. of Tokyo (Japan)

9:30 D-3-03
Proposal of 1.2kV thin wafer
Semi-SuperJunction IGBT
(SSJ-IGBT) surpassing Full
SuperJunction IGBT○
Masahiro Tanaka1, Naoki Abe2,
Akio Nakagawa3, 1. Nihon
Synopsys G.K. (Japan), 2.Nihon
Synopsys G.K. (Japan),
3.
Nakagawa Consulting Office,
LLC. (Japan)

9:30 E-3-02
Design of Triple Taper
Structure for HighPerformance Hybrid EA
modulator on Silicon
Waveguides○
Kei Masuyama1,2, Mizuki
Shirao1, Nobuhiko Nishiyama2,
Nobuo Ohata1, 1.Mitsubishi
Electric Corp. (Japan), 2.Tokyo
Tech. (Japan)

9:45 B-3-03
Enhanced Ferroelectric Field
Effect Transistor via Interlayer
Engineering Featuring
Memory Window of 3.6V,
Endurance > 109 cycles, andMulti-Level Storage for NAND
Memory○Jun Lan1, Haoran Peng1, Wenhui
Wang1, Zhixiong Li1, Guobiao
Zhang1, Mei Shen1, Xuewei
Feng2, Jiamin Li1, Feichi Zhou1,
Longyang Lin1, Yida Li1,
1.Southern University of Scienceand Technology (China),
2.
Shanghai Jiao Tong University(China)9:45 D-3-04
Physics-based LSTM Neural
Network Surrogate Modelfor SiGe HBT Intrinsic Profile
Optimization○
Gregoire Caron1,2, Anatoli
Juditsky2, Nicolas Guitard1,
Didier Celi1,
1.STMicroelectronics (France),
2.
Lab. Jean Kuntzmann (France)

9:45 E-3-03
Record-low C-band TM mode
propagation loss of 0.28 dB/cm
in silicon single-mode
waveguides with smooth top
surface○
TSUYOSHI HORIKAWA1,
Makoto Okano2, Nobuhiko
Nishiyama1,3, 1.Tokyo Inst. of
Tech. (Japan), 2.National Inst. of
Advanced Indus. Sci. and Tech.
(Japan), 3.Photonics Electronics
Tech. Res. Association (Japan)

10:00 B-3-04 (Late News)
BEOL Compatible Highreliability La-doped ZrO2
Antiferroelectric Capacitor○
Jianguo Li1, Junliang Zhou2,
Fan Wu2, ChoongHyun Lee1, Yi
Zhao1,2, 1. Zhejiang University(China), 2.East China Normal
University (China)

10:00 E-3-04
Experimental Demonstration ofCompact, Low-loss, andBroadband 2×2 Si Optical
Coupler Designed by CMA-ES○
Yuto Miyatake1, Kasidit
Toprasertpong1, Shinichi Takagi1,
Mitsuru Takenaka1, 1. The Univ. ofTokyo (Japan)

Room F(402, 4th Floor)

Tuesday, September 3
Room G(403, 4th Floor)

Room H
Room J(Small Hall, 2nd Floor) (Main Studio, 1st Floor)

07: Organic / Molecular/ Bio‐electronics
G-3:Organic / Molecular /Bio-electronics Late News
Session08: Low Dimensional Devices
and Materials
H-3:Growth

09: Novel Functional / Quantum /Spintronic Devices and Materials
J-3:Novel Quantum Devices(9:00-9:45)
Session Chair:
Masakazu Nakamura (NAIST),
Takashi Tokuda (Tokyo Tech)(9:00-10:00)
Session Chair:
Masafumi Jo (RIKEN),
Takayuki Arie
(Osaka Metropolitan Univ.)(9:00-10:00)
Session Chair:
Hidehiro Asai (AIST),
Jun Yoneda (Tokyo Tech)

9:00 H-3-01 (Invited)
9:00 G-3-01 (Late News)
Optimization and Localization
ESR Study on Organicof Molecular-Beam-EpitaxyPhotoelectrochemical
grown GaAs-based Quantum
Transistors Using Quantum
Dots
Dots
○
1
○
WENHAO HE , Seira
Andreas Dirk Wieck1, Hans1,2
1
Yamaguchi , Yizhou Chen , Jiaxi Georg Babin1, Nikolai Bart1,
Wang1, Sayo Okabe1, Yukihiro
Arne Ludwig1, 1. Ruhr-Universität
Shimoi1, Kazuhiro Marumoto1,2,3, Bochum (Germany)1.Dep. of Mater. Sci., Univ. of
Tsukuba (Japan), 2.IQSST, Univ.
of Tsukuba (Japan), 3.TREMS,
Univ. of Tsukuba (Japan)

9:00 J-3-01
Coulomb Oscillations in
Quantum Antidots in the
Integer and Fractional
Quantum Hall Regime Using
an Airbridge Gate○
Tokuro Hata1, Hiroki Mitani1,
Hidetoshi Uchiyama1, Takafumi
Akiho2, Koji Muraki2, Toshimasa
Fujisawa1, 1. Inst. of Tokyo Tech.
(Japan), 2.NTT Basic Res. Labs.
(Japan)9:15 G-3-02 (Late News)
Laser-based fabrication of
MoS2-Ag composites formolecular sensing○
Soobean Han1, Byounghyun
Jeon1, Jaehan Lee1, Yoonkyung
Lee2, Kyunghoon Kim1,
1.Sungkyunkwan Univ. (Korea),
2.
Memory Implantation Tech.
Team of Samsung Electronics(Korea)9:15 J-3-02
Asymmetric Hole Spin
Resonance Spectrum in Silicon
Quantum Dots○
Sayyid Irsyadul Ibad1, Yusaku
Suzuki1, Masahiro Tadokoro1,
Tokio Futaya1, Shimpei
Nishiyama1,2, Kimihiko Kato2,
Shigenori Murakami2, Takahiro
Mori2, Raisei Mizokuchi1, Jun
Yoneda1, Tetsuo Kodera1, 1. Tokyo
Tech. (Japan), 2.AIST (Japan)

9:30 G-3-03 (Late News)
Design and Optimization
towards Ultra-High Sensitivity
in Impedance Flow Cytometry
Devices○
Vishnuram Abhinav1, Tejas R.
Naik1,2, 1. Indian Institute ofTechnology Bombay (India),2.
University of Glasgow (UK)9:30 J-3-03
9:30 H-3-02
Magneto-transport
Orthogonal Growth of a
Characterization of GeSn for
Few-Layer WS2 Channel andan Graphene to implement the Spintronics Applications○
atomic length gate and thePrateek Kaul1, Omar
atomically thinned channel
Concepcion1, Daan Wielens2,
simultaneously
Patrick Zellekens3, Chuan Li2,
Hideaki Sugino1, Hirai Tanaka1, Zoran Ikonic4, Koji Ishibashi3,
Kazuki Yonekubo1, Fuminori
Qing-Tai Zhao1, Detlev
Sasaki1, Toshifumi Irisawa2,
Gruetzmacher1, Alexander
Takeo Matsuki2, Daisuke Ohori3, Brinkman2, Dan Mihai Buca1,
Kazuhiko Endo3, Issei Watanabe4, 1. Peter Gruenberg Inst. - 9,○
Hirokazu Fukidome1, 1. Research Forschungzentrum Juelich(Germany), 2.MESA+ Inst. for
Institute of ElectricalCommunication, Tohoku
Nanotech., Univ. of Twente
University (Japan), 2.National(Netherlands), 3.RIKEN Center
Institute of Advanced Science and for Emergent Matter Sci.
Technology (Japan), 3.Institute of (Japan), 4.Univ. of Leeds (UK)
Fluid Science, Tohoku University(Japan), 4.National Institute ofInformation and Communications
Technology (Japan)
9:45 H-3-03
PVD-WS2 Film Crystallinity
Enhancement by Controlling
Particle Energy with TargetSubstrate Distance and Argon
Pressure○
Soma Ito1, kaede Teraoka1,
Naoki Matsunaga1, Shinya Imai1,
Hitoshi Wakabayashi1, 1.Tokyo
Tech (Japan)

9:45 J-3-04
Device and Technology
Codesign of Germanium
Quantum-Dots/Si3N4
Microdisk Light Emitters○
Shih-Hsiang Yang1, Chi-Chen
Lai1, Pei-Wen Li1, 1. Institute ofElectronics, National Yang Ming
Chiao Tung University (Taiwan)

Room K(404, 4th Floor)

Room M
Room N(Special Conference Room, 4th Floor) (Studio 1, 1st Floor)

Tuesday, September 3
Room A(407, 4th Floor)

Room B(408, 4th Floor)

Room C(409, 4th Floor)

Room D(Medium Hall, 2nd Floor)

Room E(401, 4th Floor)

Room F(402, 4th Floor)

01: Advanced CMOS: Material
Science / Process Engineering /Device Technology
A-4:Advanced CMOS: Device
Technology

02: Advanced and Emerging
Memories / New Applications
B-4:Ferroelectric Memory
Devices

03: Heterogeneous and 3D
Integration / Interconnect /MEMS
C-4:Advanced integration

04: Power / High‐speed Devices
and Materials
D-4:High-speed Devices

05: Photonics: Devices /Integration / Related Technology
E-4:UV and Visible Light
Technology

06: Energy Harvesting andConverting Devices and Materials
F-4:Energy harvesting andsolar cells(10:45-12:15)
Session Chair:Anabela Veloso (imec),
Keisuke Yamamoto(Kyushu Univ.)(10:45-12:15)
Session Chair:
Atsushi Himeno(Panasonic Holdings Corp.),
Ming-Hsiu Lee(Macronix International Co., Ltd.)(10:45-12:00)
Session Chair:
Masayuki Kitamura(KIOXIA Corp.),
Yoshiyuki Ohba
(Sony Semiconductor Manufacturing Corp.)(10:45-12:00)
Session Chair:
Akira Satou (Tohoku Univ.),
Taketomo Sato (Hokkaido Univ.)(10:45-12:00)
Session Chair:
Kouichi Akahane (NICT),
Nobuhiko Ozaki(Wakayama Univ.)(10:45-11:45)
Session Chair:
Shunsuke Yamada (Tohoku Univ.),
Naoyuki Shibayama(Toin Univ. of Yokohama)

10:45 B-4-01
10:45 A-4-01
High stability of theHigh Performance(111)-Oriented Extremely-Thin ferroelectricity against
hydrogen gas in (Al,Sc)N thin
Body Ge-On-Insulator
films
nMOSFETs down to 2.1 nm○○
Xueyang Han1, Chia-Tsong
Nana Sun1, Kazuki Okamoto1,
Chen1, Kei Sumita1, Kasidit
Shinnosuke Yasuoka1, Soshun
Toprasertpong1, Mitsuru
Doko2, Naoko Matsui2, Toshikazu
Takenaka1, Shinichi Takagi1, 1.The Irisawa2, Koji Tsunekawa2,
University of Tokyo (Japan)
Hiroshi Funakubo1, 1. Tokyo Tech
(Japan), 2.Canon ANELVA Corp
(Japan)10:45 C-4-01 (Invited)
Backside Power Delivery
Process Integration Challenges○
Liesbeth Witters1, Peng Zhao1,
Gerald Beyer1, Eric Beyne1,
1.imec (Belgium)

10:45 E-4-01
10:45 D-4-01 (Invited)
Surpassing ITO Transmittance
Grating Gate GaN/AlGaN
Limit in Solar-blind
Plasmonic FETs for THz
Ultraviolet: Dual-mode
Optoelectronics Devices○
Response for AlGaN/GaN
Wojciech Knap1,2, Pavlo Sai1,2,
Broadband UV Photodetector
Maksym Dub1,2, Vadym
Korotyeyev3, 1. CENTERA Warsaw ○Yuhan Pu1,2, Yung C. Liang1,2,
1.
Univ. of Technology Warsaw
 National Univ. of Singapore(Poland), 2.UNIPRESS Polish(Singapore), 2.National Univ. of
Academy of Sciences (Poland),Singapore (Suzhou) Res. Inst.
3.
(China)V. Ye. Lashkaryov Institute of
Semiconductor Physics, NASU,
Kyiv, Ukraine (Ukraine)

10:45 F-4-01
1 mV-input voltage step-up
circuit for ultra-low voltage
thermoelectric power generator○
Shiyuan Sun1, Hang Yin1,
Satoshi Hamasuna1, Satya
Prakash Pati1,2, Takeaki Yajima1,
1.Kyushu Univ. (Japan),
2.
North-Eastern Hill Univ. (India)

11:00 A-4-02
Electron Transport in Ge(Sn)n-type Metal-OxideSemiconductor Field-EffectTransistors at Cryogenic
Temperatures○
Yen-Yang Chen1, Kai-Ying Tien1,
Chia-You Liu1, Wei-Hsiang Kao1,
Jiun-Yun Li1,2, 1.National Taiwan
Univ. (Taiwan), 2.Taiwan
Semiconductor Res. Inst.
(Taiwan)

11:00 B-4-02
Enhanced Ferroelectricity in
HfO2/ZrO2 Superlattice
Ferroelectric Capacitor with
TiO2 Seed Layer at LowTemperature Annealing
Process○
Dongya Li1,3, Huan Liu1,2,3,
Peiyuan Du1, Fei Yu1, Chengji
Jin1,3, Xiao Yu1,2,3, Yan Liu1, Yue
Hao1, Genquan Han1,3, 1. State
Key Discipline Laboratory ofWide Band Gap Semiconductor
Technology, Xidian University(China), 2.Research Center forIntelligent Chips (China),
3.
Hangzhou Institute ofTechnology, Xidian University(China)11:00 E-4-02
11:00 F-4-02
NiO/β-Ga2O3 p-n
Steady Energy Storage Density(ESD) and Efficiency ofHeterojunction Material
Epitaxial Growth on Mist-CVD Antiferroelectric Hf1-xZrxO2for Field Controlled Ga2O3
with Unipolar Switching forEnergy Harvesting
Ultraviolet Photodetector○
1
1○
Zeyulin Zhang , Dinghe Liu ,Cheng-Hong Liu1, Kuo-Yu
1
1
Yiru Yan , Qingwen Song ,Hsiang2, Fu-Sheng Chang3,
Dazheng Chen1, Chunfu Zhang1, Chee-Wee Liu1,3, Min-Hung Lee1,
Yuming Zhang1, Yue Hao1,
1.Program for Semiconductor
1.Xidian University (China)
Devices, Materials, andHetero-integration, Graduate
School of Advanced Technology,
National Taiwan University(Taiwan), 2.Institute ofElectronics, National Yang Ming
Chiao Tung University (Taiwan),3.
Graduate Institute ofElectronics Engineering,
National Taiwan University(Taiwan)

11:15 A-4-03
Te-based layered materials for
Fermi-level Depinning on n-Ge○
Wen Hsin CHANG1, Shogo
HATAYAMA1, Naoya OKADA1,
Toshifumi IRISAWA1, Yuta
SAITO1,2, 1. AIST (Japan),2.
Tohoku Univ. (Japan)

11:15 B-4-03
Oxygen Dosage Adjusting in
ALD Process for Highlyreliable and Fast Ferroelectric
HZO Thin Film with a High
Remanent Polarization○
Yu-Chun Li1, Zi-Ying Huang1,
Xiao-Na Zhu1,2, David Wei
Zhang1,2, Hong-Liang Lu1,2,
1.Fudan Univ. (China),
2.
Zhangjiang Fudan Int’lInnovation Center (China)

11:15 E-4-03
11:15 C-4-02
11:15 D-4-02
11:15 F-4-03
Development of Hybrid
Structure dependence of output Ultra Low-Loss Al2O3
Controlling Onset Voltage in
Bonding Using Area-Selective power for a resonantIntegrated Photonic Platform Mo:BiVO4/TiO2 Photoanode
Passivation Layer Deposition
tunneling-diode terahertz
for UV and Visible
for Improved PEC Water
Technology on Various
oscillator integrated with
Wavelengths
Splitting Performance○1○
Substrates for Heterogeneousrectangular cavity resonator
Gaudhaman Jeevanandam , Nga Lingga Ghufira Oktariza1, Yuta
11
1
1Integrated Structure
Ryuya Saito , Hiroki Tanaka ,P. Pham , Erfan Mafakheri ,Sato1, Muhammad Monirul○
Feifan Han1, ○Safumi Suzuki1,
Emma Vecchio1, Diego C.
Islam1, Shigeru Ikeda2, Takeaki
Wen-Tzu Tsai1, Mu-Ping Hsu1,
1.
Yi-Hsuan Chen1, Yuan-Chiu
 Tokyo Tech (Japan)
Altamirano1, Vittal Prakasam1,
Sakurai1, 1.University of Tsukuba
Huang1, Kuan-Neng Chen1,
Zeinab Jafari1, Christian(Japan), 2.Konan University
1.National Yang Ming Chiao Tung
Haffner1, Philippe Helin1, 1. imec (Japan)
Univ. (Taiwan)(Belgium)Tuesday, September 3
Room G(403, 4th Floor)

Room H
Room J(Small Hall, 2nd Floor) (Main Studio, 1st Floor)

Room K(404, 4th Floor)

Room M
Room N(Special Conference Room, 4th Floor) (Studio 1, 1st Floor)

07: Organic / Molecular/ Bio‐electronics
G-4:Highly Sensitive Devices
for Chem/Bio Detection

08: Low Dimensional Devices
and Materials
H-4:Device-II

09: Novel Functional / Quantum /Spintronic Devices and Materials
J-4:Spintronics

11: Advanced Materials:
Synthesis / Crystal Growth /Characterization
M-4:Wide Bandgap Materials

02: Advanced and Emerging
Memories / New Applications
N-4:Emerging Memory
Devices, and DRAM

(10:30-12:00)
Session Chair:
Takashi Tokuda (Tokyo Tech),
Kazuhiro Takahashi(Toyohashi Univ. of Technology)(10:45-11:45)
Session Chair:
Takamasa Kawanago (AIST),
Mahito Yamamoto (Kansai Univ.)(10:45-12:00)
Session Chair:
Shinobu Ohya
(The Univ. of Tokyo),Nozomi Nishizawa(Kitasato Univ.)(10:45-12:00)
Session Chair:
Akihiko Kikuchi (Sophia Univ.),
Yu-Lun Chueh(National Tsing‐Hua Univ.)(10:45-12:15)
Session Chair:Wein-Town Sun(eMemory Technology Inc.),
Akiyoshi Seko
(Micron Technology Inc.)

10:45 M-4-01 (Invited)
Metrology informatics on
semiconductor~ Multimodal analysis ofgallium nitride as examples ~○Shigetaka Tomiya1, 1. NAIST(Japan)10:45 N-4-01
Single Transistor Memory withLong Retention Time and High
Endurance at 300 K
Yi Han1, ○Jingxuan Sun1, Jin-Hee
Bae1, Ionut Radu2, Joachim
Knoch3, Detlev Gruetzmacher1,
Qing-Tai Zhao1,
1.Forschungszentrum Jülich
GmbH (Germany), 2.SOITEC(France), 3.RWTH Aachen Univ.
(Germany)

10:30 G-4-01"Advancing the pH Sensitivity
in Ferroelectric-ISFETs
Beyond the Nernst Limit via
Sol-Gel Process PZT Thin Film
Integration and Coplanar Gate
Sensing Paradigm"○
Dong-Gyun Mah1, Seong-Moo
Oh2, Jin-Wook Shin3, Jong-Heon
Yang3, Jongwan Jung2, Won-Ju
Cho1, 1.The Univ. of Kwangwoon(Korea), 2.The Univ. of Sejong(Korea), 3.The Lab. of ETRI
(Korea)10:45 H-4-01 (Invited)
10:45 J-4-01 (Invited)
10:45 G-4-02
From spin-orbitronics toFabrication Process of CMOS MX2 Layer Transfer: A pathorbitronics:
Multi-Chemical Image Sensor towards integrating epitaxial
for High-Resolution Imaging
2D materials in a 300mm pilot efficient manipulation of○line
topological spin structures for
Hideo Doi1, Jumpei Otsuka1,
Tomoko Horio1, Yong-Joon Choi1, ○Souvik Ghosh1, Quentin Smets1, memory and unconventional
Toshihiko Noda1, Kazuhiro
Tom Schram1, Marie-Emmanuelle computing
Takahashi1, Kazuaki Sawada1,
Boulon1, Damien J Leech1, Henry ○Mathias Kläui1,2, 1. Johannes
1.Toyohashi Univ. of Tech (Japan) Medina Silva1, Anastasiia Kruv1, Gutenberg-Universität Mainz(Germany), 2.NTNU Trondheim
Benjamin Groven1, Rudy
Verheyen1, Bavo Storms1, Pawan (Norway)
1
1
Kumar , Pierre Morin , Inge
Asselberghs1, Cesar J Lockhart
de la Rosa1, Steven Brems1, Gouri
Sankar Kar1, 1. imec (Belgium)

11:00 N-4-02
Ag/GeS/Ag Bidirectional
Conductive-Bridge Selector
with HighEndurance, Low
Turn-Off Latency andSwitching Variability○
Asif Ali1, Haider Abbas2, Jiayi
Li1, Diing Shenp Ang1, 1. Nanyang
Technological University(Singapore), 2.Sejong University(Korea)11:00 G-4-03
High Sensitive Detection of
SARS-CoV-2 by Graphene FETUsing Acetate Buffer○
Kaori Yamamoto1, Natsuki Sato1,
Mamiko Yano1, Kiyoji Sakano1,
Eriko Ohnishi1, Shota Ushiba2,
Shinsuke Tani2, Masahiko
Kimura2, Yohei Watanabe3,
Hidekazu Tanaka1, KazuhikoMatsumoto1, 1. UOsaka (Japan),2.
Murata Manufac. (Japan),
3.
Kyoto Prefecture Univ. of
Medicine (Japan)

11:15 H-4-02
11:15 G-4-04
High Performance and Low
Self-Amplifying Dual-Gate
Variability in 2D Scaled
Field-Effect Transistor
Transistors with a Short
Biosensor Platform for2+
Selective Ca Detection Using Channel Length of 30 nm○
High-k Gate Oxide Structured Sifan Chen1, Shuiyuan Wang1,
Si Nanowire Channel
Zizheng Liu1, Tanjun Wang1,○
Tae-Hwan Hyun1, Won-Ju Cho1, Peng Zhou1, 1. Fudan Univ.
Dae-Sik Lee2, 1.Kwangwoon Univ. (China)(Korea), 2.Electronics andTelecommunications Res. Inst.
(Korea)11:15 J-4-02
Spin-Orbit Torque Induced
Spatial Asymmetric Switchingin Ferrimagnets○
Zhenhang Kong1, Zhengde Xu1,
Xue Zhang1, Zhifeng Zhu1,2, 1. The
Univ. of ShanghaiTech (China),
2.
Shanghai Eng. Res. Center ofEnergy Efficient and Custom AI
IC (China)

11:15 N-4-03
11:15 M-4-02
Realization of GaN-Drain at Si "Enhancing Synaptic
Performance through the(100) n-MOS with High Field
Synergistic Effects of Indium
Effect Mobility○
12Cheng-Jun Huang , Shuo Hwai , Tungsten Oxide-based Electric1
Double Layer andTsai-Fu Chung , Chien-Nan
Hsiao3, Edward. Yi Chang2, Mau- Electrochemical Doping"
1 1.
Chung Frank Chang ,  National ○Dong-Gyun Mah1, Seong-Hwan
Yang Ming Chiao Tung Univ.
Lim1, Jin-Wook Shin2, Jong-Heon(Taiwan), 2.Univ. of California,
Yang2, Won-Ju Cho1, 1. The Univ.
Los Angeles (United States ofof Kwangwoon (Korea), 2.TheAmerica), 3.National Applied Res. Lab. of ETRI (Korea)
Labs., Taiwan Instrument Res.
Inst. (Taiwan)

Tuesday, September 3
Room A(407, 4th Floor)

Room B(408, 4th Floor)

Room C(409, 4th Floor)

Room D(Medium Hall, 2nd Floor)

Room E(401, 4th Floor)

Room F(402, 4th Floor)

01: Advanced CMOS: Material
Science / Process Engineering /Device Technology
A-4:Advanced CMOS: Device
Technology

02: Advanced and Emerging
Memories / New Applications
B-4:Ferroelectric Memory
Devices

03: Heterogeneous and 3D
Integration / Interconnect /MEMS
C-4:Advanced integration

04: Power / High‐speed Devices
and Materials
D-4:High-speed Devices

05: Photonics: Devices /Integration / Related Technology
E-4:UV and Visible Light
Technology

06: Energy Harvesting andConverting Devices and Materials
F-4:Energy harvesting andsolar cells

11:30 A-4-04 (Late News)
Low-temperature annealing
effect on electrical/structuralcharacteristics for SiO2/GeO2/
Ge gate stack○Hajime Kuwazuru1, Taisei Aso1,
Dong Wang2, Keisuke
Yamamoto2, 1. IGSES, Kyushu
Univ. (Japan), 2.FES, Kyushu
Univ. (Japan)

11:30 D-4-03
11:30 B-4-04
11:30 C-4-03
Optimization Strategies
Large-Area Single-Crystal Ge Adopting Thin Channel Layer
to Achieve High Performancethrough Interfacial Layer
Using Elevated Epitaxy
in InAlGaN/GaN HEMTEngineering in BEOL
Technique for Monolithic 3D○
Ferroelectric Memory Devices Integration
You-Chen WENG1, Chee-Hao○
1,2
1
for Diverse Applications
Yu-Ming Pan , Huan-Yu Chiu , Lu1, Chih-Yi Yang1, Chin-Han○
Nien-Chih Lin2, Hao-Tung
Chung1, Ching-Ting Lee2,
Tsung Ying Lin1, Cheng Hung
Wu2, Chun Yung Chiu1, William
Chung1, Bo-Jheng Shih1,
Fu-Ching Tung3, Shih-Hsiang
Cheng Yu Ma3, Vita Pi Ho Hu2,
Chiao-Yen Wang1, Chih-Chao
Lai3, Chan-Yuen Chang4,
Chun Jung Su1,4, 1.National Yang Yang2, Po-Tsang Huang1,
Chien-Wei Chen4, Hung-Wei Yu1,
Ming Chiao Tung Univ. (Taiwan), Chang-Hong Shen2, Po-Jung
Yi edward Chang1,2, 1.National2.
Sung2, Wen-Fa Wu2, Kuan-Neng Yang Ming Chiao Tung
National Taiwan Univ.
University (Taiwan), 2.National(Taiwan), 3.National Sun Yat-sen Chen1, Chenming Hu1,3,
1.
Univ. (Taiwan), 4.Taiwan
 National Yang Ming Chiao Tung Cheng Kung University(Taiwan), 3.Industrial Technology
Semiconductor Research Inst.
University (Taiwan), 2.Taiwan(Taiwan)Semiconductor Research Institute Research Institute (Taiwan),
4.
(Taiwan), 3.University of
Taiwan Instrument Research
California, Berkeley (United
Institute (Taiwan)
States of America)

11:45 A-4-05
Determining factors of theEffective Work Function of
TiN/TiAlC Metal Gates for
Advanced Gate-all-around
CMOS Integration○
Kenzo Manabe1, Kazuya
Uejima1, Hiroyuki Ota1, Yukinori
Morita1, Toshifumi Irisawa1,
Yoshihiro Hayashi1, 1.National
Inst. of Advanced Indus. Sci. andTech. (Japan)

11:45 E-4-05
11:45 C-4-04
11:45 B-4-05
11:45 D-4-04
Long-Wavelength InGaNOptimization of Plasma Dicing Enhancement of RF
Comparative Studies of
Based Micro-LEDs for Visible
Process for Die to Wafer
Thermal Stability Between
Characteristic in T-gate
Light Communication
Back-End-of-Line Superlattice Hybrid Bonding
AlGaN/GaN HEMTs with○and Solid Solution Hf0.5Zr0.5O2 ○Violeta Georgieva1, Filip
AlGaN Back Barrier
Fu-He Hsiao1,2, Wen-Chien○
Ferroelectric Memories on
Schleicher2, Ye Lin1, SamuelHsin Chu Chen1, Po Tsung Tu2,3, Miao1,2, Tzu-Yi Lee2,3, ChunFerroelectricity and Switching Suhard1, Anne Jourdain1, Edward Chang Yan Hsieh3, Hui-Yu Chen3, Liang Lin1, Chi-Wai Chow3,
Dynamics
Walsby2, Il Gyo Koo1, Frederic
Po Chun Yeh3, Hao Chung Kuo2,4, Gong-Ru Lin4, Kazuhiro○
1.
Lazarino1, Gerald Beyer1, Eric
 Institute of Advanced
Ohkawa5, Hao-Chung Kuo2,3,Cheng-Hung Wu1, Tsung-Ying
2
2,3
1 1.
Lin , Chun-Jung Su , Vita Pi-Ho Beyne ,  IMEC (Belgium),
Semiconductor Packaging and
Yu-Heng Hong2, 1. Department of
1 1.
2.
Testing, National Sun Yat-sen
Hu ,  National Taiwan Univ.
Electrophysics, College of Sci.,
KLA-Tencor (UK)
University (Taiwan),
National Yang Ming Chiao Tung
(Taiwan), 2.National Yang Ming
2.
Univ. (Taiwan), 2.Semiconductor
Chiao Tung Univ. (Taiwan),
Department of Photonics and3.
Institute of Electro-OpticalRes. Center, Foxconn Res.
Taiwan Semiconductor ResearchEngineering, National Yang Ming (Taiwan), 3.Department ofInst. (Taiwan)
Chiao Tung University (Taiwan), Photonics and Inst. of Electro3.
Optical Eng., College ofElectronic and Optoelectronic
Electrical and Computer Eng.,
System Research Laboratories,
Industrial Technology Research National Yang Ming Chiao Tung
Univ. (Taiwan), 4.Department ofInstitute (Taiwan),4.
Semiconductor Research Center, Electrical Eng., Graduate Inst. of
Photonics and Optoelectronics,
Hon Hai Research InstituteNational Taiwan Univ. (Taiwan),(Taiwan)5.
Computer, Electrical andMathematical Sci. and Eng.
Division, King Abdullah Univ. ofSci. and Tech. (Saudi Arabia)

12:00 A-4-06
Gate-All-Around Vertical
Channel Transistor Based on
Self-Aligned in 2 Pitch Process
for Future DRAM○
Seunguk Han1, 1. Samsung
electronics Co., Ltd. (Korea)

12:00 B-4-06
50× Endurance Improvementfor HfO2-based Ferroelectric
Capacitor Utilizing Hybrid
Recovery Scheme○
Zhuohua Tang1,3, Wanwang
Yang1,3, Xujin Song1,3, Haotong
Zhu1,3, Nan Tang1,3, Haozhang
Yang1,3, Yulin Feng2, Zheng
Zhou1,3, Jinfeng Kang1,3, Peng
Huang1,3, 1. Peking Univ. (China),
2.
Beijing Info. Sci. and Tech.
Univ. (China), 3.Beijing Advanced
Innovation Center for Integrated
Circuits (China)

11:30 E-4-04
11:30 F-4-04
Fabrication and Demonstration Enhanced photovoltaic
of Optical Waveguides andperformance and longevity ofBeam Splitters Using
perovskite modules via
Aluminum Oxide with Low
interface engineering ofLoss at Visible Wavelengthtransport layer○
1○
Takuto Yamaguchi , Naoki
HUNG CHIEH HSU1, Shih1
1
Fushimi , Manabu Ohtomo ,Hsiung Wu2, Chuan Feng Shih1,3,
Tetsuya Miyatake1, Shoichi
1.National Chung Kung Univ.
Miyahara1, Hirokazu Hosoi1,(Taiwan), 2.Industry Technology
Toshiyuki Miyazawa1, Kenichi
Research Inst. (Taiwan),
3.
Kawaguchi1, Ryoichi Ishihara2,
Hierarchical Green–Energy
1 1.
Shintaro Sato ,  Fujitsu Ltd.
Materials (Hi–GEM) Research
2.
Center (Taiwan)(Japan), QuTech, TU Delft(Netherlands)

Short Oral Presentation(13:30-14:28)(13:30-14:02)
01: Advanced CMOS: Material 02: Advanced and Emerging
Science / Process Engineering / Memories / New Applications
Session Chair:
Device Technology
Session Chair:
Atsushi Himeno
Hidetoshi Oishi(Panasonic Holdings Corp.),(Sony Semiconductor Solutions Corp.), Xu Bai
Kuniyuki Kakushima(NanoBridge Semiconductor, Inc.)(Tokyo Tech)(13:30-13:46)
03: Heterogeneous and 3D
Integration / Interconnect /MEMS
Session Chair:
Mayumi Takeyama(Kitami Inst. of Technology),
Takeyasu Saito(Osaka Metropolitan Univ.)(13:30-14:10)(13:30-13:54)
04: Power / High‐speed Devices 05: Photonics: Devices /and Materials
Integration / Related
Session Chair:
Technology
Taketomo Sato (Hokkaido Univ.), Session Chair:
Naotaka Iwata
Nobuhiko Ozaki(Toyota Technological Inst.)(Wakayama Univ.)(13:30-13:46)
06: Energy Harvesting andConverting Devices andMaterials
Session Chair:Takeshi Tayagaki (AIST)

Tuesday, September 3
Room G(403, 4th Floor)

Room H
Room J(Small Hall, 2nd Floor) (Main Studio, 1st Floor)
08: Low Dimensional Devices
and Materials
H-4:Device-II

Room K(404, 4th Floor)

Room M
Room N(Special Conference Room, 4th Floor) (Studio 1, 1st Floor)

09: Novel Functional / Quantum /Spintronic Devices and Materials
J-4:Spintronics

11: Advanced Materials:
Synthesis / Crystal Growth /Characterization
M-4:Wide Bandgap Materials

02: Advanced and Emerging
Memories / New Applications
N-4:Emerging Memory
Devices, and DRAM

11:30 J-4-03
11:30 H-4-03
11:30 G-4-05
Ultra-thin and Low-EOT HfOx Stable Field Writing in
Reconfigurable Ion-Sensitive
Field-Effect Transistors for
Seed Layer-assisted Deposition Magnetic Domain Wall
Highly Integrated CMOSof High-κ Gate Dielectric on 2D Memory Devices by
Suppression of Thermal
Compatible Biosensor Platform Semiconductors○
1
1○
Disturbances
Tae-Hwan Hyun , Won-Ju Cho , Haofei Zheng1,4, Lingqi Li1,
2 1.
2
3
○
Dae-Sik Lee ,  Kwangwoon Univ. Chenyang Li , Sujuan Ding ,Michael Quinsat1, Naoharu
2.
1
4(Korea), Electronics and
Yu-Chieh Chien , Mingxi Chen , Shimomura1, Yoshihiro Ueda1,
Telecommunications Res. Inst.
Heng Xiang1, Jianwei Chai4, Yi
Susumu Hashimoto1, Yasuaki(Korea)Wan2, Dongzhi Chi4, Chuanhong Ootera1, Tsuyoshi Kondo1,
Jin3, Lain-Jong Li2, Kah-Wee
Masaki Kado1, 1. KIOXIA Corp.
Ang1, 1. National Univ. of(Japan)Singapore (Singapore), 2.The
Univ. of Hong Kong (HongKong), 3.Zhejiang Univ. (China),
4.
Inst. of Materials Res. and Eng.,A*STAR (Singapore)

11:30 M-4-03
Effects of Al2O3/SiO2 double
layer mask on nanotrench
etching of GaN by hydrogenenvironment anisotropic
thermal etching (HEATE)○
Shuya Sato1, Yuki Takahashi1,
Tomoaki Momma1, Akihiko
Kikuchi1,2,3, 1. Sophia Univ.
(Japan), 2.Sophia Photonics Res.
Center (Japan), 3.Sophia
Semiconductor Research Inst.
(Japan)

11:30 N-4-04
A Novel Logic-ProcessCompatible Embedded
Non-Volatile Memory for
Display Driver IC (DDI)
Applications○
Hsueh Wei Chen1, Wei Ren
Chen1, Wein Town Sun1, Cheng Yu
Chung1, Chia Ming Hu1, Hung Yi
Liao1, Chi Wei An1, Ching Yuan
Lin1, Ming Chou Ho1, 1. eMemory
Technology Inc. (Taiwan)

11:45 M-4-04
Improvement of Fabrication
Process for Top-down GaN
Nanowires Using Contactless
Photo-assisted Electrochemical
Etching○
Hisahiro Furuuchi1,2, Taketomo
Sato2, Junichi Motohisa1,2,
1.
 Graduate School of Info. Sci.
and Tech., Hokkaido Univ.
(Japan), 2.Res. Center for
Integrated Quantum Electronics,
Hokkaido Univ. (Japan)

11:45 N-4-05
Gate Oxide Technology
Relieving Word-line Break in
10 nm-class DRAM○
Taehoon Park1, Dongkyu Jang1,
Inkyum Lee1, Jongkyu Kim1, Sang
Bin Ahn1, Jieun Lee1, Shindeuk
Kim1, Hyodong Ban1, 1. Samsung
Electronics (Korea)

07: Organic / Molecular/ Bio‐electronics
G-4:Highly Sensitive Devices
for Chem/Bio Detection

11:45 J-4-04
New method for suppression ofmagnetic domain wall shifterror in 3D magnetic domainwall memory○
Pham Nam Hai1, Takanori
Shirokura1, Nguyen Huynh Duy
Khang2, 1. Tokyo Tech. (Japan),2.
Hochiminh Univ. Edu. (VietNam)

11:45 G-4-06
ICT-Based Colorimetric andRatiometric Fluorescent
Chemodosimeter for Swift andQuantitative Naked-Eye
Detection of Cyanide○
Kew-Yu Chen1, 1.Feng Chia
University (Taiwan)

12:00 N-4-06
Comprehensive analysis ofIntermittent Single-bit Failurein 10 nm-class DRAM○
Jieun Lee1, Donkyu Jang1, Hyon
Namkung1, Sungwoon Choi1,
Jinwon Jeong1, Sehoon Ko1,
Taehoon Park1, Hyodong Ban1,
1.Samsung Electronics (Korea)

Short Oral Presentation(13:30-13:48)
07: Organic / Molecular /Bio‐electronics
Session Chair:
Hiroaki Iino (Tokyo Tech)(13:30-13:52)
08: Low Dimensional Devices
and Materials
Session Chair:Toshifumi Irisawa (AIST)(13:30-13:52)
09: Novel Functional /Quantum / Spintronic Devices
and Materials
Session Chair:
Takafumi Fujita (Osaka Univ.),
Hidehiro Asai (AIST)(13:30-14:00)(13:30-13:54)
10: Thin Film Electronics:
11: Advanced Materials:
Oxide / Non‐single Crystalline / Synthesis / Crystal Growth /Novel Process
Characterization
Session Chair:
Session Chair:
Kaoru Toko (Univ. of Tsukuba), Kentaro Watanabe
Ryo Matsumura (NIMS)(Shinshu Univ.),
Shunjiro Fujii (Univ. of Hyogo)(13:30-13:38)
12: Advanced Circuits /Systems Interacting with
Innovative Devices andMaterials
Session Chair:
Yasuhiro Ogasahara (AIST),
Hongchin Lin(National Chung Hsing Univ.)

Tuesday, September 3
Poster Session (15:00-17:00) Poster Hall (Exhibition Hall A) (1st Floor)
01: Advanced CMOS: Material Science / Process Engineering / Device Technology
PS-01-01
A Novel Self-Aligned Backside Contact Architecture for Advanced Logic Nodes○
QingPeng Wang1, Sumant Sarkar2, TaeYeon Oh3, 1. Lam Research (China), 2.Lam Research (UnitedStates of America), 3.Lam Research (Korea)
PS-01-02
Germanium Gate Stack Fabrication at Low Temperatureusing Nonheated Atomic Layer Deposition○
Taisei Aso1, Hajime Kuwazuru1, Dong Wang1, Keisuke Yamamoto1, 1. Kyushu Univ. (Japan)
PS-01-03
Logic Cell of CFET Based on Double-Cell-Height to Enhance Intra-Cell Connectivity○
Liang-Chi Huang1, Pen-Yi Chu1, Ko-Cheng Lu1, Wei-Cheng Kang1, Bo-Hsun Juan1, Tzu-Yin Chen1,
Bi-Xian Wu1, Tzu-Hsuan Chang1, 1. National Taiwan University (Taiwan)
PS-01-04
Performance Evaluation of Cold CFET considering Contact-Placement dependent Gate
Resistance Effects○
Shu-Han Li1, Pin Su1, 1. National Yang Ming Chiao Tung Univ. (Taiwan)
PS-01-05
Neural Network Prediction of Cryogenic BSIM4 Model Parameters Utilizing a Small
Experimental Data Set○
Takumi Inaba1, Yusuke Chiashi1, Hiroshi Oka1, Minoru Ogura1, Hidehiro Asai1, Shota Iizuka1,
Kimihiko Kato1, Shunsuke Shitakata1, Hiroshi Fuketa1, Takahiro Mori1, 1. National Institute ofAdvanced Industrial Science and Technology (Japan)
PS-01-06
Reconfigurable-FETs based on CMOS-Compatible Synapse Transistors with inorganic-organic
hybrid Methyl-Silsesquioxanes-Based Electrical Double Layer○
Seung-Hyun Lee1, Won-Ju Cho1, 1.The Univ. of Kwangwoon (Korea)
PS-01-07
Investigation of Layout Optimization on the Self-heating Effects and Logic Performance of
6T-SRAM Based on Nanosheet and Forksheet FET○Pan Zhao1, Tao Yu Zhou1, Nai Qi Liu1, Yan Dong He1, Gang Du1, 1. Peking University (China)
PS-01-08
Interfacial Trap Density Investigation of HfO2-ZrO2 Superlattice Gate Stacks with Ultra-low
Equivalent Oxide Thickness○
kun zhong1,2,3, Zhaohao Zhang1,2,3, Siyuan Liu1,2,3, Yueyuan Zhang1,2,3, Huaxiang Yin1,2,3, 1. Universityof Chinese Academy of Sciences (China), 2.Institute of Microelectronics of the Chinese Academy of
Sciences (China), 3.Integrated Circuit Advanced Process R&D Center and State Key Laboratory of
Fabrication Technologies for Integrated Circuits (China)
PS-01-09
Charge-Trapping Optoelectronic Memcapacitors Achieving Photoelectric Perception, Storage,
and Reconfigurable In-memory Logics○
Ning Liu1, Siying Zheng2, Jiuren Zhou1,2, Yan Liu1,2, Genquan Han1,2, Yue Hao1, 1.School ofMicroelectronics, Xidian Univ. (China), 2.Hangzhou Inst. of Tech., Xidian Univ. (China)
PS-01-10
Effect of Random Potential on Two-dimensional Electronic States○
Nobuya Mori1, 1.Osaka University (Japan)
PS-01-11
Comprehensive Study on the Frequency Stability Characteristics of HfO2-ZrO2 Superlattice
Ferroelectric Films○
Qiuxia Wu1, Yue Peng1, Mingshuang Kang1, Chunfu Zhang1, Xiaohua Ma1, Yue Hao1, 1. Wide
Bandgap Semiconductor Tech. Disciplines State Key Lab., School of Microelectronics, Xidian Univ.
(China)PS-01-12
Effect of Non-Uniform Polycrystallinity on Ferroelectric Electrostatic Doped Transistor
Variability○
xinghui wang1, Siying Zheng2, Jiuren Zhou1,2, Hongrui Zhang2, Yan Liu1,2, Yue Hao1,2, Genquan
Han1,2, 1.School of Microelectronics, xidian Univ. (China), 2.Hangzhou Inst. of Tech., Xidian Univ.
(China)PS-01-13
Texture of Orthorhombic ScSi in Annealed TiN / Sc / Si(:P)(001) Contact Stacks○
Bert Pollefliet1, Clement Porret2, Christophe Detavernier3, Jean-Luc Everaert2, Kiroubanand
Sankaran2, Erik Rosseel2, Roger Loo2, André Vantomme1, Clement Merckling1, 1. KU Leuven(Belgium), 2.imec (Belgium), 3.Ghent University (Belgium)
PS-01-14
AR-HAXPES Evaluation of the Effect of Hydrogen Plasma Treatment on the Chemical
Bonding State and Distribution of Hydrogen in SiN Films○
Yoshiharu Kirihara1, Haruto Omata1, Akira Yasui2, Kiyokazu Nakagawa3, Yuichiro Mitani1, Hiroshi
Nohira1, 1. Tokyo City Univ. (Japan), 2.JASRI (Japan), 3.Abit Technologies (Co. Ltd.) (Japan)
PS-01-15
Analysis of AC Degradation in SiON pMOSFET by Extraction of Threshold Voltage
Degradation Profile○
Donghee Son1, Yeohyeok Yun2, 1. Samsung Electronics (Korea), 2.Korea University of Technology and
Education (KOREATECH) (Korea)

PS-01-16
Atomic-Scale Insights into the Effects of Biaxial Strain on the Electronic Structure of
Orthorhombic Hf0.5Zr0.5O2○
Yu Hong Chen1, Chen You Wei2, Yi Ju Yao2, Fu Ju Hou3, Guang Li Luo3, Yung Chun Wu1,2, 
02: Advanced and Emerging Memories / New Applications
PS-02-01
Ozone SiO2/HfO2 Interface Engineering for Performance and Reliability Optimization of
Hf0.5Zr0.5O2 FeFETs: Device Integration and Electrical Investigation○
Xueyang Li1, Yaxuan Yuan1, Chengji Jin2, Xinze Li1, Xiao Yu2, Ran Cheng1, Genquan Han3, 1. The
Univ. of Zhejiang (China), 2.The Lab. of Zhejiang (China), 3.The Univ. of Xidian (China)
PS-02-02
Analysis of reliability improvement in HfO2-based ferroelectric capacitorsby ozone oxidation of
the bottom electrode○
Yuki Itoya1, Takuya Saraya1, Toshiro Hiramoto 1, Masaharu Kobayashi 1,2, 1. Univ. Tokyo Inst. Indus.
Sci. (Japan), 2.Univ. Tokyo d.lab (Japan)
PS-02-03
Improved Memory Window and Endurance of FeFET using Laminated Thin Films andFluorine Plasma Passivation for Analog Synaptic Characteristics○
Kyungsoo Park1, Chulwon Chung2, Boncheol Ku1, Seung Hyeon Yun1, Junhyeok Park1, Changhwan
Choi1, 1. Division of Materials Science and Engineering, Univ. of Hanyang (Korea), 2.Department ofEnergy Engineering, Univ. of Hanyang (Korea)
PS-02-04
Comparative Analysis of Ferroelectric Domain Wall Motion Under Cycling Stress of HfZrO2Fabricated by Thermal and Plasma-Enhanced Atomic Layer Depositions○
Sangwoo Ryu1,2, Ryun-Han Koo1, Wonjun Shin1, Kyung Min Lee1, Woo Young Choi1, Jong-Ho Lee1,
1.
 Seoul National University (Korea), 2.SK hynix (Korea)
PS-02-05
Improvement of Memory Window of Silicon Channel Hf0.5Zr0.5O2 FeFET by Inserting Al2O3/
HfO2/Al2O3 Top Interlayer○
Runhao Han1, Tao Hu1, Jia Yang1, Mingkai Bai1, Yajing Ding1, Xianzhou Shao1, Saifei Dai1,
Xiaoqing Sun1, Junshuai Chai1, Hao Xu1, Kai Han2, Xiaolei Wang1, Wenwu Wang1, Tianchun Ye1,
1.Inst. of Microelectronics Chinese Academy of Sci. (China), 2.School of Physics and Electronic Info.,
Weifang Univ. (China)
PS-02-06
New insight into memory window engineering in FeFET with oxide semiconductor○
Zikang Yao1, Tianning Cui1, Danyang Chen1, Yulong Dong1, Zhiyu Lin1, Mengwei Si1, Xiuyan Li1,
1.Shanghai Jiao Tong Univ. (China)
PS-02-07
Comparative Study of Polysilicon and MoS2 Channel Based 3D NAND○
Mohd Ashraf Lone1, Dibyadrasta Sahoo1, Imtiyaz Ahmad Khan1, Sanjeev Kumar Manhas1, 1. Indian
Institute of Technology Roorkee (India)
PS-02-08
Disturbance Induced Refresh Time Lowering in Nanowire RFET 1T-DRAM Array
Rohit Kumar Nirala1, Manish Gupta2, ○Abhinav Kranti1, 1. Indian Inst. of Tech. Indore (India), 2.Birla
Inst. of Tech. and Sci., Pilani, K. K. Birla, Goa Campus (India)
PS-02-09
Nitrogen Incorporated Interlayer for Enhanced Hf-Zr-O Ferroelectric Tunnel Junctions in
Ternary-Content-Addressable-Memory○
Jaekyeong Kim1, Manh-Cuong Nguyen1,2, An Hoang-Thuy Nguyen1, Anh-Duy Nguyen1, Hyunsoo
Kim1, Kyungsoo Hwang1, Geon Park1, Hoyeon Shin1, Siun Song1, Daewoong Kwon2, Rino Choi1,1.Inha Univ. (Korea), 2.Hanyang Univ. (Korea)
PS-02-10
Guidelines for Achieving Optimal Classification Accuracy through Unsupervised Learning in
Spiking Neural Network Using FeFETs-based Synapses○
Chung-Li Chang1, Hao-Kai Peng1, Shun-Chi Wu1, Yung-Hsien Wu1, 1. National Tsing Hua Univ.
(Taiwan)
PS-02-11
Analysis of Cell Characteristic using Back Oxide Trap Charge Effect in 3D-NAND Flash
Daewoong Kang1, ○Chaeyeon Jung1,2, Minkyo Suh1,3, Gwansun Choi1,3, Youngho Jung4, 1. Seoul
National University (Korea), 2.Soongsil University (Korea), 3.Chung-Ang University (Korea), 4.Daegu
University (Korea)
PS-02-12
Analysis of Cell Characteristics depending on Vertical Channel Profile and Multiple Dielectric
WL Spacer in 3D NAND Flash Memory
Daewoong Kang1, ○Gwansun Choi1,2, Minkyo Suh1,2, Chaeyeon Jung1,3, Youngho Jung4, 1. Seoul
National University (Korea), 2.Chung-Ang University (Korea), 3.Soongsil Univ. (Korea), 4.Daegu
University (Korea)
PS-02-13
Investigation of Void Effect Inside Epi-plug on Electrical Characteristics of NAND Flash
Memory○Dibyadrasta Sahoo1, Ankit Gaurav1, Mohd Ashraf Lone1, Sanjeev kumar Manhas1, 1. Indian Inst. of
Tech. Roorkee (India)
PS-02-14
Fatigue Recovery and Endurance Improvement under Low Operating Voltage of HfZrO2/Ge
MF(I)S Capacitor fabricated at BEOL-Compatible Temperature○
Jai-Youn Jeong1,2, Kyeol Ko1, Kyunghwan Kim1, Changhwan Shin2, Jae-Hoon Han1, 1. The Korea
Inst. of Science and Technology (KIST) (Korea), 2.The Korea Univ. (Korea)

PS-02-15
Unipolar RRAM Cells Enabled by Hetero-Complex-Oxide Stack for Ultra-Speed Multilevel
Programming○
Jun-Peng Lee1, Chun-Chien Chiu4, Yu-Wei Chen1, Bo-Cheng Chen2, I-Ling Li3, Yu-Ting Wang2, ZhihYun Kuo3, Ning-Yuan Lue1, Jan-Chi Yang4, Chao-Hui Yeh1,2,3, 1. Inst. of Electronics Engineering,
National Tsing Hua Univ. (Taiwan), 2.Department of Electrical Engineering, National Tsing Hua
Univ., (Taiwan), 3.College of Semiconductor Research, National Tsing Hua Univ. (Taiwan),4.
Department of Physics, National Cheng Kung Univ. (Taiwan)
PS-02-16
Impact of SiON bottom interlayer on memory window of FeFET with the TiN/top interlayer/
ferroelectric/bottom interlayer/Si substrate (MIFIS) structure○
jia Yang1, Runhao Han1, tao Hu1, saifei Dai1, xianzhou Shao1, xiaoqing Sun1, junshuai Chai1, hao
Xu1, kai Han2, xiaolei Wang1, wenwu Wang1, tianchun Ye1, 1. Inst. of Microelectronics Chinese
Academy of Sci. (China), 2.School of Physics and Electronic Info., Weifang Univ. (China)
PS-02-17
TiOx/TaOx-Based Optoelectronic Neuro-synaptic ReRAM Device○
Saransh Shrivastava1, Jhih-Ling Guo1, Hans Juliano1, Tseung-Yuen Tseng1, 1. Inst. of Electronics,
National Yang Ming Chiao Tung Univ. (NYCU), Hsinchu 30010, Taiwan (Taiwan)
PS-02-18
High Performance BEoL-Compatible FeRAM with Robust Endurance >109 Cycles by Two Pr >32 uC/cm2 HfZrO2 Ferroelectric Film and CAAC-IGZO as Low Leakage Transistor○
Hiroshi Yoshida1, Min-Hung Lee2, Shang-Shiun Chuang1, Chuan-Hua Chang1, Wen-Hsiang Hsieh1,
Yung-Lung Hsu1, Shih-Chi Yen1, Zong-Han Li2, Fu-Sheng Chang2, Ming-Han Liao3, Shou-Zen
Chang1, 1. Powerchip Semiconductor Manufacturing Corporation (Taiwan), 2.Graduate School of
Advanced Technology, National Taiwan University (Taiwan), 3.Graduate School of Advanced
Technology and Department of Mechanical Engineering, National Taiwan University (Taiwan)
PS-02-19
Si-Te-N-O amorphous chalcogenide for selector device with high thermal stability○
Kentaro Saito1, Shogo Hatayama1, Yuta Saito1,2, 1. The Inst. of AIST (Japan), 2.The Univ. of Tohoku(Japan)PS-02-20
Analysis of Intermediate State in MgO-based MTJ Switching○
Chihiro Watanabe1, Yuya Miyazaki1, Junichi Tsuchimoto2, Hiroyuki Hosoya3, Kazuto Yamanaka3,
Yoshiteru Amemiya2, Akinobu Teramoto1,2,4, 1. Grad. Sch. of Adv. Sci. and Eng., Hiroshima Univ.
(Japan), 2.Res. Inst. for Semiconductor Eng., Hiroshima Univ. (Japan), 3.CANON ANELVA Corp.
(Japan), 4.Res. Inst. for Synchrotron Radiation Sci., Hiroshima Univ. (Japan)
PS-02-21
Improving the TER by Incorporating Antiferroelectric HZO Layer in 5 nm Thin MFM FTJGeon Park1, ManhCuong Nguyen1, AnHoang Nguyen1, AnhDuy Nguyen1, Hyunsoo Kim1, Kyungsoo
Hwang1, Jaekyeong Kim1, Hoyeon Shin1, Siun Song1, Rino Choi1, 1. Inha Univ. (Korea)○

PS-02-22
Comparative Study on Transistor Structures for IGZO-Based FeTFTs○
He Young Kang1, Seung Hee Cha1, Jae Kyeong Jeong1, 1. Hanyang University (Korea)
PS-02-23
Improving switching uniformity through nitrogen doping in CMOS process-compatible Ta2O5based ReRAM device○
youna kwon1, Won-Chul Lee1, Gapseop Sim1, Woo-Suk Sul1, Jongwon Lee2, 1. The Inst. of NNFC
(Korea), 2.Univ. of Chungnam (Korea)
PS-02-24
Time dependance changes of interface states in Nb-doped SrTiO3/Pt ReRAM
Yumeng Zheng1, Tomohiro Ishii1, Kentaro Kinoshita1, 1. Tokyo univ. of science (Japan)○

PS-02-25
HfO2-ZrO2 Superlattice Ferroelectric FinFET with Low-Temperature Poly-Siusing Green
Laser Crystallization for BEOL applications○
Chen-You Wei1, Yung-Teng Fang2, Yi-Ju Yao1, Chih-Chao Yang3, Fu-Ju Hou3, Guang-Li Luo3,
Yung-Hsien Wu2, Yung-Chun Wu2, 1.College of Semiconductor Research, National Tsing Hua
University (Taiwan), 2.Department of Engineering and System Science, National Tsing Hua
University (Taiwan), 3.Taiwan Semiconductor Research Institute (Taiwan)
PS-02-26
Multibit P-type Fe-GAAFETs Utilizing HfO 2/ZrO 2 Superlattice Dielectric and SiGe/Si
Superlattice Channel with Record Characteristics via Quantum Mechanisms for High-Density
1T NVM Applications○
Yi Ju Yao1, Tsai Jung Lin1, Bo Xu Chen2, Chen You Wei1, Yung Teng Fang2, Heng Jia Chang2, Yu Min
Fu1, Guang Li Luo3, Fu Ju Hou3, Yung Chun Wu1,2, 1. College of Semiconductor Research, National
Tsing Hua University (Taiwan), 2.Department of Engineering and System Science, National Tsing
Hua University (Taiwan), 3.Taiwan Semiconductor Research Institute (Taiwan)
PS-02-27 (Late News)
Mott Transition Switching Phenomenon of Carbon-doped HfOx Thin Film and Application to
CeRAM○
Masamichi Azuma1,2, Mamoru Ikeda1, Tsubasa Miyamoto1, Hiroyuki Nishinaka1, 1. Kyoto Institute ofTechnology (Japan), 2.Symetrix Corp. (United States of America)

03: Heterogeneous and 3D Integration / Interconnect / MEMS
PS-03-01
Investigation of Propagation Directions on GaN Surface Acoustic Wave Resonators Toward
Wide Temperature Range Applications○
Guofang Yu1, Renrong Liang1, Jun Fu1, Jun Xu1, Tian-Ling Ren1, Jingqing Du2, Di Zhao2, 1. Tsinghua
Univ. (China), 2.Beijing Sevenstar Flow Corp., Ltd. (China)
PS-03-02
Improvement of Uniformity by Face-to-Face Ultra-High-Pressure Annealing Observed by
Scanning Internal Photoemission Microscopy Using Au/Ni/n-GaN Schottky Contacts○
Kenji Shiojima1, Yasuho Matsumoto1, Hiroki Imabayashi1, Tetsu Kachi2, 1. Univ. of Fukui (Japan),2.
Nagoya Univ. (Japan)
PS-03-03
Size effect on mechanical characteristics of 3D-printed resin nanowires
Masao Torii1, 1. Kyoto University of Advanced Science in Nanomechatronics Lab. (Japan)○

PS-03-04
Consideration on the electrochemical behavior of graphene dispersed in aqueous solution
Naoki Okamoto1, Rei Miyake1, Takeyasu Saito1, 1.Osaka Metropolitan Univ. (Japan)○

PS-03-05
Control of Surface Oxidation and Stress by Additives in Ni Electrodeposition○
Takeyasu Saito1, Kohei Yamada1, Ryosuke Komoda1, Naoki Okamoto1, 1. Osaka Metropolitan
University (Japan)
PS-03-06
Precise Measurements of Small Reverse-Biased-Currents for Large-Barrier Au/Ni/n-GaN
Schottky Contacts○
Kenji Shiojima1, Hiroki Imabayashi1, Kentaro Kawanishi1, Hiroshi Ohta2, Tomoyoshi Mishima2,
1.
 Univ. of Fukui (Japan), 2.Hosei Univ. (Japan)
PS-03-07
Low-temperature deposited thin ZrN films for backside Cu interconnect
Masaru Sato1, Mayumi B. Takeyama1, 1. Kitami Inst. of Tech. (Japan)○

PS-03-08
Mechanical Characterization of Sintered Silver Films with Copper Particles for SiC Die Attach
Applications○
Chessadakorn - Chantawong1, Michiko Shindo1, Mitsuhiro Nishida2, Takahiro Namazu1, 1. Kyoto
University of Advanced Science, Kyoto, Japan (Japan), 2.Nihon Superior Co., Ltd., Osaka, Japan(Japan)04: Power / High‐speed Devices and Materials
PS-04-01
Unipolar AC Bias Stress Degradation Mechanism in Heterogeneous Ga2O3-on-SiC MOSFET○
Chenyu Liu1, Yibo Wang2, Chunxiao Yu1, Wenhui Xu3, Xiaole Jia1, Shuqi Huang1, Zeyu Yang1, Xiaoxi
Li4, Bochang Li4, Zhengdong Luo1,4, Cizhe Fang4, Yan Liu1, Tiangui You3, Xin Ou3, Yue Hao1,
Genquan Han1,4, 1. School of Microelectronics, Xidian Univ. (China), 2.Suzhou Inst. of Nano-Tech andNano-Bionics, Chinese Academy of Sci. (China), 3.Shanghai Inst. of Microsystem and Info. Tech.,
Chinese Academy of Sci. (China), 4.Hangzhou Inst. of Tech., Xidian Univ. (China)
PS-04-02
Improvement in channel mobility of recess-gate GaN MOSFET with Al0.28Si0.72O gate dielectricusing AlGaN/GaN selective-area regrowth method on GaN-on-Si substrate○
Po-Chin Huang1, Daimotsu Kato1, Jumpei Tajima1, Hiroshi Ono1, Masahiko Kuraguchi1, Toshiki
Hikosaka1, 1.Corporate Research & Development Center, Toshiba Corp. (Japan)
PS-04-03
Electrical Characteristics of Aluminum Oxide and Aluminum Oxynitride with a Thin SiO2Interfacial Layer as Gate Stack Dielectric on the Nitric Oxide (NO) Gas Treated Silicon
Carbide (SiC) Substrate as the MOS Capacitor under Rapid Thermal Annealing○
Cheng-Li Lin1, Bo-Xian Su1, Yu-Lun Lee1, Pi-Chun Juan2, 1.Feng Chia Univ. (FCU) (Taiwan), 2.Ming
Chi Univ. of Tech. (MCUT) (Taiwan)
PS-04-04
Evaluation of Thermal Stress of N-type β-Ga2O3 Crystals with Ti/Au Electrode Film by MicroRaman Spectroscopy○
Jun Suda1, Ryoya Kakamu1, 1. School of Engineering of Chukyo University (Japan)
PS-04-05
Characterization and Analysis on ESD Robustness of SiC VDMOSFET○
Chao-Yang Ke1, Ya-Zhi Hu1, Ming-Dou Ker1, 1. Inst. of Electronics, National Yang Ming Chiao Tung
Univ. (Taiwan)
PS-04-06
A Study of Heteroepitaxial Single Crystal β-Ga2O3 δ-doped MESFET on C-plane Sapphire by
Mist-CVD○
FANG-YU HSU1, HAO-CHUN HUNG1, CHING-YU CHENG1, YIN-CHU HSIAO1, CHIA-CHENG
HSU1, WEI-CHOU HSU1, 1. National Cheng Kung University, NCKU (Taiwan)

PS-02-28 (Late News)
Experimental Implementation of 4-bit Carry Lookahead Adder in Memristor Crossbar Arrayusing Threshold Logic○
Sangwook Youn1, Jinwoo Park1, Hyungjin Kim1, 1. Hanyang University (Korea)

PS-04-07
Reduced Ohmic Contact Resistance in AlGaN/GaN HEMTs via Graphene Insertion andRecessed Patterns
Chen-Hsiang Chung1, ○Yue-ming Hsin1, Bo-Hao Chen1, Yu-Han Hung1, Ching-Yuan Su1, 1. National
Central Univ. (Taiwan)

PS-02-29 (Late News)“Correlation between fundamental properties and current density in perovskite oxide
resistance change memory Pt/Nb:SrTiO3”○
Ryosuke Ohtani1, Yumeng Zheng1, Kentaro Kinoshita1, 1. Tokyo Univ. of Sci. (Japan)

PS-04-08
Effects of Moderate-Temperature Annealing on Near-Surface Defects in Mg-Implanted GaN
Studied Using MOS Structures○
Genta Shindo1, Yuki Hatakeyama1, Masamichi Akazawa1, 1. Hokkaido University (Japan)

PS-04-09
Achieve E-mode GaN MIS-HEMTs Through Thin Barrier Technology○
TSUNG YING YANG1, Jui Sheng Wu1, You Chen Weng1, Tzu Fan Liu1, Tzu Hao Tseng1, Pei Xin Beh1,
Fu Ching Tung2, Shih Hsiang Lai2, Edward Yi Chang1, 1. National Yang Ming Chiao Tung University(Taiwan), 2.Industrial Technology Research Institute (Taiwan)
PS-04-10
Photoelectron holographic study for atomic site occupancy of the Si dopant in κ-Ga2O3(001)○
Yuhua TSAI1,2, Yusuke Hashimoto3, Piero Mazzolini4,5, Tomohiro Matsushita3, Yoshiyuki Yamashita1,2,
1.
 National Institute for Materials Science (NIMS) (Japan), 2.Kyushu University (Kyushu Univ.)(Japan), 3.Nara Institute of Science and Technology (NAIST) (Japan), 4.University of Parma (UNIPR)(Italy), 5.Institute of Materials for Electronics and Magnetism (IMEM-CNR) (Italy)
PS-04-11
TCAD-based Collector-Emitter Capacitance Model of an IGBT Compact Model for Accurate
Power Efficiency Prediction○
Takeshi Mizoguchi1, Masahiro Tanaka1, 1. Nihon Synopsys G.K. (Japan)
PS-04-12
First-principles Study on Electronic Structure and Optoelectronic Properties of P-doped
β-Ga2O3 with Intrinsic Defects○
Hui Li1, Dongyuan Zhai1, Qihao Zhang1, Jiwu Lu1, 1. The Univ. of Hunan (China)
PS-04-13
High-Frequency Performance of AlGaN/GaN MIS-HEMTs for Cryogenic Applications
Chuang-Ju Lin1,2, Bo-Jun Huang2, Bo-Yuan Chen1, Kun-Ming Chen1, Edward Yi Chang2, 1. The Inst.
of Taiwan Semiconductor Research (Taiwan), 2.The Univ. of National Yang Ming Chiao Tung
(Taiwan)○

PS-04-14
Effect of Al2O3 deposition temperature on the electrical properties of Al2O3/β-Ga2O3 (001) metaloxide semiconductor capacitors○
qihao zhang1, Dongyuan Zhai1, Hui Li1, Min He1, Jiwu Lu1, 1. The Univ. of Hunan (China)
PS-04-15
Analysis of ESD Capability of SiC MOSFET with Various Cell Designs○
Wei-Shan Zou1, Kung-Yen Lee1,2, Yan-Yu Wen2, Pei-Chun Liao1, Jian-Jie Chen1, Tsai-Pei Lu1,
Xue-Fen Hu1, 1. Department of Eng. Sci. and Ocean Eng., Nat’l Taiwan Univ. (Taiwan), 2.Graduate
School of Advanced Tech., Nat’l Taiwan Univ. (Taiwan)
PS-04-16
Snapback in Diamond p-i-p Structure Containing a Small Amount of n-type Impurity in thei-layer○
Kohei Mishima1, Akihiko Watanabe1, 1.Kyushu Inst. of Tech. (Japan)
PS-04-17
RF Performance Analysis of Double-Channel Fin-HEMT with Small-Signal Modeling○
Ren-Hong Zhang1, Po-Hsun Hsu1, Yu-Hsuan Lu3, Yuan-Hung Huang1, Tsung-Hsien Lin1, Li-Wei
Lin1, Chao-Hsin Wu1,2,3,4, 1. Graduate Inst. of Photonics and Optoelectronics, National Taiwan Univ.
(Taiwan), 2.Center for Quantum Science and Engineering, National Taiwan Univ. (Taiwan),3.
Graduate School of Advanced Tech., National Taiwan Univ. (Taiwan), 4.Graduate Institute ofElectronics Engineering, National Taiwan Univ. (Taiwan)
PS-04-18
Analysis of Errors in Junction Temperature Estimated by Temperature-Sensitive ElectricalParameter for Parallel-Connected Power Devices○
Shuhei Fukunaga1, Tsuyoshi Funaki1, 1. Osaka University (Japan)
PS-04-19 (Late News)
Impacts of Mechanical Uniaxial Stress on Mobility Enhancement of 4H-SiC Trench MOSFET○
Momoko Inayoshi1, Naotoshi Hikosaka1, Ryuki Kamiya1, Eiji Kagoshima2, Shigehisa Shibayama3,
Mitsuo Sakashita3, Hidemoto Tomita2, Tsuyoshi Nishiwaki2, Hirokazu Fujiwara2, Osamu Nakatsuka3,
Noriyuki Taoka1, Wakana Takeuchi1, 1.Aichi Institute of Tech. (Japan), 2.MIRISE Technologies(Japan), 3.Nagoya Univ. (Japan)
PS-04-20 (Late News)
Performance Enhancement of 3C-SiC n-MOSFET by Channel Structure Improvement andForming Gas Annealing for a Gate Stack○
Rima Nishizaki1, Dong Wang1, Keisuke Yamamoto1, Hiroki Uratani2, Yoshiki Sakaida2, Shigeomi
Hishiki2, 1. Kyushu Univ. (Japan), 2.Air Water Inc. (Japan)
05: Photonics: Devices / Integration / Related Technology
PS-05-01
High sensitivity and high-speed response surface-normal InGaAs photodetector with plasmonic
grating for optical communication system○
Toshiki Masuzawa1, Takuo Tanemura2, Atsushi Ono1,3, 1.Graduate School of Sci. and Tech., Shizuoka
Univ. (Japan), 2.School of Engineering, The Univ. of Tokyo (Japan), 3.Res. Inst. of Electronics,
Shizuoka Univ. (Japan)
PS-05-02
Extended SWIR GeSn/Ge MQW photodiode for imaging of dim-light night vision○
Cheng Li1, 1.Xiamen University (China)
PS-05-03
Columnar 3D Silicon Photodiodes for Near-Infrared Sensing○
Tetsuya Ariyoshi1, Naoya Iwamoto1, 1. Fukuoka Inst. of Tech. (Japan)
PS-05-04
Development of Uni-Travelling Carrier Photodiode as a Terahertz Wave Emitter for NonDestructive Applications○
Jin Chul Cho1, Dong Woo PARK1, Soo Cheol KANG1, Eui Su Lee1, 1. Electronics andTelecommunications Research Inst. (Korea)

PS-05-05
Development of A-plane ZnMgO Electro-optic Thin-films for UV Optical Modulators○
Lei Meng1, Xueyou Yuan2, Tianrui Zhai1, Tomoaki Yamada2, 1.Beijing Univ. of Tech. (China),
2.
Nagoya Univ. (Japan)
PS-05-06
SiN Waveguide Development for Graphene-Based Modulators:
Thickness Influence on Light Propagation Loss○
Rasuole Lukose1, Pawan Kumar Dubey1, Ashraful Islam Raju1, Anna Peczek1, Aleksandra Kroh1,
Andreas Krüger1, Marco Lisker1,2, Mindaugas Lukosius1, Andreas Mai1,2, 1.Leibniz Institute for High
Performance Microelectronics (Germany), 2.Technical University of Applied Science (Germany)
PS-05-07
Room Temperature Polarization-Dependent Photocurrent Characteristics of Near-Infrared
Photodiode Based on Dilute Nitride GaNAs○
Daiki Mineyama1, Satoshi Hiura1, Kaito Nakama2, Hidetoshi Hashimoto2, Keisuke Minehisa2,
Junichi Takayama1, Agus Subagyo1, Kazuhisa Sueoka1, Fumitaro Ishikawa2, Akihiro Murayama1,
1.
 IST, Hokkaido Univ. (Japan), 2.RCIQE, Hokkaido Univ. (Japan)
PS-05-08
Frequency Dependent Transient Behavior of 2D Semiconductor Electroluminescent Device
Under AC drive○
James Singh Konthoujam1, Yen-Shou Lin1,2, Ya-Hui Chang1,2, Chiao-Yun Chang1, Yu-Wei Zhang1,
Shih-Yen Lin1, Hao-Chung Kuo1,2, Min-Hsiung Shih1,2, 1.Academia Sinica (Taiwan), 2.National Yang
Ming Chiao Tung University (Taiwan)
PS-05-09
Propose of Filter-Free Spectroscopic Sensors on Epitaxial Layer Substrate to Realize Singlepixel Spectrometer○
Yui Kato1, Yong-Joon Choi1, Tomoya Ide1, Takeshi Hizawa1, Daisuke Akai1, Yasuyuki Kimura1,
Kazuhiro Takahashi1, Toshihiko Noda1, Kazuaki Sawada1, 1.Toyohashi Univ. of Tech. (Japan)
PS-05-10
Modeling of Electroluminescence from n-Ge Metal-Insulator-Semiconductor Tunneling
Junctions○
Weijia Wang1, Min Xie1, Jihai He1, Xiaohua Ma1, Yue Hao1, 1. Xidian Univ. (China)
PS-05-11
Investigation of Measurement Properties of Subsurface damaged layer on Silicide
Semiconductor Wafer by Micro-Raman Tomographic Imaging○
Teppei Onuki1, Kazuma Watanabe1, Haruhiko Udono1, 1.Ibaraki Univ. (Japan)
PS-05-1220-μm-Diameter Organic/Metal Thin-Film Whispering Gallery Mode Resonators and its Effectof Suppression of Exciton Quenching○
Minami Takaishi1, Tokuji Yokomatsu2, Kazusuke Maenaka2, Takeshi Komino1, 1. Grad. Sch. Sci., Univ.
Hyogo (Japan), 2.Grad. Sch. Eng., Univ. Hyogo (Japan)
06: Energy Harvesting and Converting Devices and Materials
PS-06-01
Optimization of Heat Guide Structure ofan Integrated Silicon Micro Thermoelectric Generator○
Mai Awata1, Keita Kuga1, Md Mehdee Hasan Mahfuz1, Takeo Matsuki1, Takanobu Watanabe1,
1.Waseda Univ. (Japan)
PS-06-02
Thermal Stability and Energy Storage Performances of MIM Capacitors Based on
Antiferroelectric 10 nm- HfxZr1-xO2○
Rabei Barhoumi1,2, Nicolas Vaxelaire1, Zineb Saghi1, Patrice gonon2, Vincent Jousseaume1,
Messaoud Bedjaoui1, 1.Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France (France), 2.Univ.
Grenoble Alpes, CNRS, LTM, Grenoble 38000, France (France)
PS-06-03
Evaluation of Mg2Si TPV cells fabricated on n-Mg2Si substrate by thermal diffusion of Ag
acceptor○
Takumi Shimizu1, Daisuke Miyago1, Syunya Sakane1, Haruhiko Udono1, 1. The Univ. of Ibaraki(Japan)PS-06-04
Improvement of Output Performance of Triboelectric Nanogenerator by Edding Ionic Liquid
into Polydimethylsiloxane○
Qingyang Zhou1, Yumeng Zheng1, Kentaro Kinoshita1, Takashi Ikuno1, 1. Tokyo Univ. of Science(Japan)PS-06-05
A-LLTO Nanofillers Boost the Ionic Conductivity of the Jeffamine-based Composite Solid
Polymer Electrolyte○
Rohan Paste1, Chih Wei Chu1, 1. Academia Sinica, Taipei (Taiwan)
PS-06-06
ESR study on the effect of PDINO cathode buffer layers on the performance of RP Sn-based
perovskite solar cells○
Yizhou Chen1, Seira Yamaguchi1,2, Kaito Inoue1, Atsushi Sato1, Kazuhiro Marumoto1,2,3, 1. Dep. ofMater. Sci., Univ. of Tsukuba (Japan), 2.OIQST, Univ. of Tsukuba (Japan), 3.TREMS, Univ. of Tsukuba(Japan)PS-06-07
Interface engineering with grinded Nickel Oxide Powder (NiO) as hole transport layer for p-i-n
type perovskite solar cells○
Chih Wei Chu1, Anjali Thakran1, 1. Academia Sinica (Taiwan)
PS-06-08
Effect of Intentionally Changed Nitrogen Distribution on Nitrogen Localized level in GaAsN
thin films○
Kyosuke Yamashita1, Tomoki Harada1, Masahiro Kawano1, Hidetoshi Suzuki1, Tetsuo Ikari1,
Atsuhiko Fukuyama1, 1. Univ. of Miyazaki (Japan)

07: Organic / Molecular / Bio‐electronics
PS-07-01
Enhanced performance of pH sensors with advanced TaO x/Ta stacked sensitive films inextended-gate field-effect transistors
Tung-Ming Pan1, ○Wen-Hsin Chien1, Chen-Hung Lin1, 1. Chang Gung University (Taiwan)
PS-07-02
Proposal for Compact LSPR Biosensor System to Realized Multiplex Molecular Detection
Using Filter-Free Wavelength Sensor○
Yuki Iiboshi1, Yong-Joon Choi1, Tomoya Ide1, Ikhyun Kwon1, Yasuyuki Kimura1, Kazuhiro
Takahashi1, Toshihiko Noda1, Kazuaki Sawada1, 1. Toyohashi Univ. of Tech. (Japan)

PS-08-08
CNT/PDMS Composite Based Sensors for Tactile Sensation○
Kang-Hyuk Lee1, Jong-Hyun Na1, Woo-Tae Park1, 1. Seoul National Univ. of Sci. and Tech. (Korea)
PS-08-09
Specific Target Detection beyond Debye Screening Length in Antibody-Modified Epitaxial
Graphene FETs on a SiC substrate○
Keita Murayama1, Yasuhide Ohno1, Masao Nagase1, 1. Tokushima Univ. (Japan)

PS-07-03
Thrombosis Analysis System Using Actuator-Based Stenosis○
Dong-Hwi Ham1, Ji-Seob Choi1, Woo-jun Jung2, Seong-hyeon Lee2, Yong-ha Hwang2, Woo-Tae
Park1, 1. Seoul National Univ. of Sci. and Tech. (Korea), 2.Korea Univ. Sejong Campus (Korea)

PS-08-10
Evaluation of Electron-Phonon Coupling Strength and Average Phonon Energies in MoS2 Thin
Film
Umidakhon Rayimjonova1,3, Daisuki Kawai1, Ryu Hasunuma2, ○Muhammad Monirul Islam2, Takeaki
Sakurai2, 1. Degree Programs in Pure and Applied Sciences, Graduate School of Science andTechnology, University of Tsukuba (Japan), 2.Department of Applied Physics, Institute of Pure andApplied Sciences, University of Tsukuba (Japan), 3.Uzbek-Japan Innovation Center of Youth(Uzbekistan)

PS-07-04
Pyramid CNT Sensor Enabled Intravascular Catheters○
Chao-Wei Dong1, Ki-Jeong Moon1, Jong-Hyun Na1, Woo-Tae Park1, 1. Seoul National Univ. of Sci.
and Tech. (Korea)

PS-08-11
Enhancement of Memory Window for Few-Layer Black Phosphorous FeFET○
Yen-Shuo Su1, Min-Hung Lee2, Shu-Tong Chang1, 1. National Chung Hsing University (Taiwan),2.
National Taiwan University (Taiwan)

PS-07-05
Development of Wireless Optically Stimulable UCNP (Upconversion-Nanoparticle) Devices for
Photodynamic Therapy○
Shutaro Oba1, Naoki Iwanuma1, Chenxi Qiu1, Kazushi Tsuji2, Hisashi Kino3, Takafumi Fukushima1,
Tetsu Tanaka1,2, 1.The Graduate School of Eng., Univ. of Tohoku (Japan), 2.The Graduate School of
Biomedical Eng., Univ. of Tohoku (Japan), 3.The Graduate School of ISEE, Univ. of Kyushu (Japan)

09: Novel Functional / Quantum / Spintronic Devices and Materials

PS-07-06
RISC-V based digital processing platform for intermittently-operated IoT and Biomedical
applications○
Panithan Srisinsuphya1, Yasufumi Yokoshiki2, Takashi Tokuda1, 1.Tokyo Inst. of Tech. (Japan),2.
Aoyama Gakuin Univ. (Japan)
PS-07-07
Crystal and Electronic Structure of Acenaphtho[1,2-k]fluoranthene Analogues
Seiya Yokokura1,2, Takuma Yuki1, Hiroki Waizumi1,2, Toshihiro Shimada1,2, 1. Grad. Sch. of Chem. Sci.
and Eng., Hokkaido Univ. (Japan), 2.Division of Appl. Chem., Fac. of Eng., Hokkaido Univ. (Japan)○

PS-07-08
Impact of the Gate Dielectric Interface on Contact Resistance in Organic Field-EffectTransistor○
Riki Matsumoto1, Manish Pandey2, Hiroaki Benten1, Masakazu Nakamura1, 1. NAIST (Japan), 2.IIT
Bhilai (India)
PS-07-09
Construction of hybrid quantum wells combined with organic semiconductor layer andinorganic semiconductor layer in lead bromide-based layered perovskites by “Molecular
LEGO Technique” and superlayer structure formation.
○
Masanao Era1, 1.Saga Univ. (Japan)
08: Low Dimensional Devices and Materials
PS-08-01
Low Ohmic Contact of Ti/Al on few-layer 2H-MoTe2 achieved using stacked 1T’-MoTe 2
interlayers○
Jinn-Kong Sheu1, Yung-Lan Chuang1, Ping-Feng Chi1, Jing-Wen Zhang1, Jing-Jie Wang1, ChungKai Li1, Hao-Wei Lee1, Ming-Lun Lee2, 1. National Cheng Kung University (Taiwan), 2.Southern
Taiwan University of Science and Technology (Taiwan)
PS-08-02
Operando Investigation of Optospintronic Devices Based on van der Waals Magnets○
Martin Zacek1, Vaibhav Varade1, Satyam Sahu2, Matěj Velický2, Martin Kalbáč2, Jana Vejpravová1,
1.Charles University, Faculty of Mathematics and Physics (Czech Republic), 2.J. Heyrovský Instituteof Physical Chemistry of the Czech Academy of Sciences, v.v.i. (Czech Republic)
PS-08-03
Control of Strain of Chemical Vapor Deposition Grown Monolayer MoS2 During Transfer
Process
Mitsuhiro Okada1, Yuki Okigawa1, ○Takatoshi Yamada1, 1. AIST (Japan)
PS-08-04
Effective Treatments for Aggregation of Au Thin Films in Selective-Area VLS Growth Processof Ge Nanowires on Si (111)○SHUMA YUZAWA1, Shuya Yamaguchi1, Shohei Okuda1, Wipakorn Jevasuwan2, Naoki Fukada2,
Shinjiro Hara1, 1. Hokkaido University (Japan), 2.National Institute for Materials Science (Japan)
PS-08-05
Enhancing the resistive switching properties of transparent HfO2-based memristor devices forreliable gasistor○
Taegi Kim1, Doowon Lee1,2, Myoungsu Chae3, Hee-Dong KIm1, 1.Sejong University (Korea), 2.IHP
GmbH—Leibniz Institute for Innovative Microelectronics (Germany), 3.Institute of Industrial Science,
University of Tokyo (Japan)
PS-08-06
Al-Catalyzed SiNW-based Si/Ge Core-Shell Heteroarchitectures and Hole Gas Accumulation
Enhancement for Transistor Applications○
Wipakorn Jevasuwan1, Naoki Fukata1, 1. National Institute for Materials Science (NIMS) (Japan)
PS-08-07
Analytical Modeling of WSe2 Negative Capacitance Field-Effect Transistor for Highly Sensitive
Biosensors
Xian Wu1, ○Sen Gao1, Lei Xiao1, Jing Wang1, 1. Tsinghua university (China)

PS-09-01
The effects of dissipation in reservoir computing using spin qubit array
Shion Mifune1, Taro Kanao2, Tetsufumi Tanamoto1, 1. Teikyo Univ. (Japan), 2.Shibaura Institute ofTechnology (Japan)○

PS-09-02
Improvement of spin orbital torque in Pt/Co/Ni system by insertion layer○
LIN ZHANG1, Kazuhiko Tokunaga1, Yuichiro Kurokawa1, Hiromi Yuasa1, 1. kyushu university (Japan)
PS-09-03
Role of Interfacial Layers in the Inverse Spin Hall Effect for the Ferromagnetic CoFeB and
Layered Material Bi2Te3 Stacked Films○
Misako Morota1, Shogo Hatayama1, Wipakorn Jevasuwan2, Naoki Fukata2, Yuta Saito3, 1. AIST
(Japan), 2.NIMS (Japan), 3.Tohoku Univ. (Japan)
PS-09-04
Temperature and Magnon Wave-vector Dependence of Gilbert Damping Processes for Two
Magnon Modes in Antiferromagnetic NiO○Andi Gumarilang1, Nawa Kenji1,2, Nakamura Kohji1, 1. Mie Univ. (Japan), 2.NIMS (Japan)
PS-09-05
Schottky Diode Enhanced AlGaN/GaN Magnetoresistive Sensor for 200 mV Ultra-low Bias
Operation○
Lingxi Xia1,2, Yung C. Liang1,2, 1.National Univ. of Singapore (Singapore), 2.National Univ. ofSingapore (Suzhou) Res. Inst. (China)
PS-09-06
Magnetism of Ultrathin Small-Grain MoS2 Film on Number of Layers for Low Power TwoDimensional Spintronic Devices○
Shungo Okamura1, Iriya Muneta1, Takanori Shirokura1, Hitoshi Wakabayashi1, 1. Tokyo Inst. of Tech.
(Japan)PS-09-07
Imaging of AC Magnetic Field by Multipulse Quantum Sensing Sequences and Multifrequency
Resonance○
Shunta Onodera1, Yoshikatsu Ohkubo1, Yusuke Azuma1, Hideyuki Watanabe2, Satoshi Kashiwaya3,
Shintaro Nomura1, 1. Univ. of Tsukuba (Japan), 2.AIST (Japan), 3.Nagoya Univ. (Japan)
PS-09-08
Effect of Interface Trap Charge on Coulomb Oscillation in MOS-type Quantum Dots○
Hidehiro Asai1, Shota Iizuka1, Junichi Hattori1, Koichi Fukuda1, Tsutomu Ikegami1, Hiroshi Oka1,
Takumi Inaba1, Shunsuke Shitakata1, Kimihiko Kato1, Takahi Nakayama1, Takahiro Mori1, 1. National
Institute of Advanced Industrial Science and Technology (Japan)
PS-09-09
Temperature-dependent electron scattering in AlGaAs/GaAs superlattices○
Nagi Maeda1, Xiangyu Zhu1, Marc Bescond2, Naomi Nagai1, Kazuyuki Kuroyama1, Kazuhiko
Hirakawa1, 1. Institute of Industrial Science, Univ. of Tokyo (Japan), 2.IN2MP, Aix-Marseille Univ.
(France)PS-09-10
Linear Regression Using Quantum Annealing with Continuous Variables○
Asuka Koura1, Takashi Imoto2, Katsuki Ura2, Yuichiro Matsuzaki1, 1.Chuo University (Japan), 2.AIST(Japan)PS-09-11
Design and characterization of an inductor-shunted matching circuit for radio-frequency
reflectometry of a silicon quantum dot○
Shimpei Nishiyama1, Ryo Matsuda1, Jun Kamioka2, Raisei Mizokuchi1, Jun Yoneda1, Tetsuo Kodera1,1.
 Tokyo Tech (Japan), 2.Information Technology R & D Center, Mitsubishi Electric Corporation(Japan)
10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process
PS-10-01
Utilizing Ultrasonic Spray Pyrolysis Deposition and Various Precursor Combinations toFabricate High-Performance Zinc-Tin Oxide Thin-Film Transistors○
HAO-CHUN HUNG1, HUNG-CHI CHANG1, YU-YUE LIN1, HAN-YIN LIU2, WEI-CHOU HSU1,
1.National Cheng Kung University, NCKU (Taiwan), 2.National Sun Yat-Sen University, NSYSU(Taiwan)PS-10-02
Fluorination Mechanism and Physical Properties of In2O3:F Thin-film Transistors○
Jiayi Wang1,2, Kuo Zhang1,2,3, Ziheng Bai2, Nannan You1,2, Yang Xu1,2, Ling Li2,3, Di Geng2,3, Shengkai
Wang2,3, 1. High-Frequency High-Voltage Device and Integrated Circuits Research & Development
Center, Institute of Microelectronics, Chinese Academy of Sciences (China), 2.Key Laboratory of
Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences (China), 3.Universityof Chinese Academy of Sciences (China)
PS-10-03
A Novel Poly-Si/IGZO Thin-Film Transistor CMOS Inverter○
PingChe Liu1, Chien-Wei Chen2, Chi-Chung Kei2, Pei-Wen Li1, Horng-Chih Lin1, 1. Inst. ofElectronics, National Yang Ming Chiao Tung Univ. (Taiwan), 2.National Applied Res. Labs., Taiwan
Instrument Research Inst. (Taiwan)
PS-10-04
Effects of Plasma Hydrogenation on the Performance of T-shaped Gate Poly-Si Thin-Film
Transistors○
Geng-Yuan Xie1, Cheng-Kuei Lee1, Pei-Wen Li1, Ke-Yin Jhou2, Kun-Ming Chen2, Guo-Wei Huang2,
Horng-Chih Lin1, 1. National Yang Ming Chiao Tung University (Taiwan), 2.Taiwon Semiconductor
Research Institute (Taiwan)
PS-10-05
Crystal Structure Changes and Their Impact on Electrical Properties through ALD Sub-Cycle
Control in the IGO System○
Gwang Bok Kim1, Jae Kyeong Jeong1, 1. Hanyang Univ. (Korea)
PS-10-06
Stabilization of P-type Semiconducting TeO2 Based on Surface Energy Effects
Rui-Yi Chen1, Shao-Chen Lee1, Ying-Tsan Tang1, 1. National Central University (Taiwan)○

PS-10-07
Nonlinear Electric Field Enhancement in the THz Range by Self-organized Metal Networks
through Phase Transition of the VO2○
Ai Isohashi Osaka1,2, Masaya Nagai3, Hui Ren2, Shingo Genchi2, Boyuan Yu2, Hidekazu Tanaka2,
Azusa N. Hattori2, 1.University of Hyogo (Japan), 2.SANKEN, Osaka Univ. (Japan), 3.Osaka Univ.
(Japan)PS-10-08
Hot-Wire-Type Micromachined Chemiresistive Gas Sensors for Battery-Powered City Gas
Alarms○
Shoichiro Nakao1, Takafumi Taniguchi1, Taishi Orita1, Rui Kakunaka1, Hirokazu Mitsuhashi1, 1.New
Cosmos Electric Co., Ltd. (Japan)
PS-10-09
Complementary Poly-Si Thin-Film Transistors Fabricated Using
Ni-Induced Crystallization Technology Through an Ultra-Thin Oxide Layer○
Po-Yi Kuo1, Hao-Yu Wang2, 1. National Chin Yi University of Technology (Taiwan), 2.Feng Chia
University (Taiwan)
PS-10-10
Investigation of Indium-optimized IGZO TFT via Plasma Enhanced Atomic Layer Deposition
Suitable for CMOS Backend of Line Integration
Meishan Zhang1, ○Wenhui Wang1, Jiqing Lu1, Jun Lan1, Haoran Peng1, Jiamin Li1, Feichi Zhou1,
Longyang Lin1, Mei Shen1, Yida Li1, 1. Southern University of Science and Technology (China)
PS-10-11
Effect of oxygen plasma pulse time of Plasma-Enhanced Atomic Layer Deposition on thestability of Back-End-of-Line-Compatible a-InGaZnO thin film transistors○
Shaocong Lv1, Xianglong Li1, Weilin Wang1, Yuxiang Li1, Qian Xin1, Chuan Liu2, Aimin Song3,4,
Jiawei Zhang1, 1.Shandong University (China), 2.Sun Yat-Sen University (China), 3.Southern
University of Science and Technology (China), 4.University of Manchester (UK)
PS-10-12
Investigation of HfO2/ZrO2 Superlattice Gate Stack for Scaling
TZU-I KAO1, Kai-Wei Huang1, Yi-Wen Lin1, Jun-Wei Wu2, Yung-Chun Wu1,2, Fu Ju Hou3, 1. Dept. ofEngineering and System Science, National Tsing Hua Univ (Taiwan), 2.College of Semiconductor
Research, National Tsing Hua Univ., (Taiwan), 3.Taiwan Semiconductor Research Institute (Taiwan)○

PS-10-13
Extremely Downscaling Ultra-thin ALD-ZnO Transistors to Sub-20nm○
Minghe Zhang1, Tingzhen Yi1, Dengqin Xu1, Ruibin Duan1, Junchen Dong2, Yi Wang1, Dedong
Han1,3,4, Xing Zhang1,5, 1. Peking Univ. (China), 2.Beijing Info. Sci. and Tech. Univ. (China), 3.Beijing
Advanced Innovation Center for Integrated Circuits (China), 4.Beijing Superstring Academy ofMemory Tech. (China), 5.Peking Univ. Shenzhen Graduate School (China)
PS-10-14
Investigation of W/L Ratio of Load Transistors for ZnO Inverter Applications
Jingye Xie1, Chuanlin Sun2, Qinyuan Wang1, Junchen Dong2, Dedong Han1,3, Xing Zhang1,4, 1.Peking
Univ. (China), 2.Beijing Info. Sci. and Tech. Univ. (China), 3.Beijing Superstring Academy of Memory
Tech. (China), 4.Peking Univ. Shenzhen Graduate School (China)○

PS-10-15
Humidity-Tolerant Neuromorphic Olfactory Systems Based on Hardware-Deployable Spiking
Neural Networks and SnOx Resistor-Type Gas Sensors○
Donghee Kim1,2, Gyuho Yeom1,2, Woo Young Choi 1,2, Jong-Ho Lee1,2, 1. Department of Electrical andComputer Engineering, Seoul National University, Seoul, Republic of Korea (Korea), 2.InterUniversity Semiconductor Research Center (ISRC), Seoul National University, Seoul, Republic ofKorea (Korea)
11: Advanced Materials: Synthesis / Crystal Growth / Characterization
PS-11-01
Analysis of inclined structure of threading screw dislocation in SiC using deep X-ray
topography○
Kotaro Ishiji1, Akio Yoneyama1, Isaho Kamata2, Fumihiro Fujie2, 1. SAGA Light Source (Japan),2.
Cen. Res. Inst. Elec. Power Indus. (Japan)

PS-11-02
Defect Annihilation in Sn-Doped Ge Thin-Films on Insulator with High Carrier Mobility by
Post-Annealing○
Ryu Hashimoto1, Taishiro Koga1, Takaya Nagano1, Takashi Kajiwara1, Kenta Moto1, Keisuke
Yamamoto1, Taizoh Sadoh1, 1. Kyushu Univ. (Japan)
PS-11-03
Low-Temperature Reduction and N Doping of Graphene Oxide by Soft X-ray Irradiation andAtomic Hydrogen/Nitrogen○
Misora Ueshimo1, Junichi Inamoto1, Yoshiaki Matsuo1, Kazuhiro Kanda1, Koji Sumitomo1, Akira
Heya1, 1. The Univ. of Hyogo (Japan)
PS-11-04
Thermal scanning probe lithography assisted broadband silicon photodetectors
yang Xu1, ○Zongwen Li1, Zishun Li2, Qianqian Zhang1, Yunfei Xie1, Feng Tian1, Muhammad Abid
Anwar1, Srikrishna Chanakya Bodepudi1, Zhi-Xiang Zhang1, Jian Chai1, Xiaorui Zheng2, Huan Hu1,
Bin Yu1, Yang Xu1, 1.Zhejiang Univ. (China), 2.Westlake Univ. (China)
PS-11-05
Nanographene Synthesis on Quartz Substrate by Polymerization of Pentacene andDihydropentacene○
Misaki Nakayama1, Koji Sumitomo1, Akira Heya1, 1. Univ. of Hyogo (Japan)
PS-11-06
GeSn on Insulator Metal-Semiconductor-Metal PhotodetectorBy Layer Transfer Technique○
Tatsuro Maeda1, Hiroyuki Ishii1, Wen Hsin Chang1, Komei Takagi2, Shigehisa Shibayama2, Masashi
Kurosawa2, Osamu Nakatsuka2, 1. AIST (Japan), 2.Nagoya Univ. (Japan)
PS-11-07
Theoretical Study on Structural Stability and Miscibility of ScAlN alloys: Effect of Lattice
Constraints○
Takuto Miyamoto1, Toru Akiyama1,2, Takahiro Kawamura1,2, 1.School of Engineering, Mie Univ.
(Japan), 2.Innovation Center for Semiconductor and Digital Future, Mie Univ. (Japan)
PS-11-08
Molecular Dynamics Simulation of Si-Cr-C Solutions:
The Effect of Al Addition on SiC Solution Growth○
Takumi Fukunaga1, Ryo Iwasa1, Takahiro Kawamura1, Shota Seki2, Shunta Harada2, Toru Ujihara2,
1.The Univ. of Mie (Japan), 2.The Univ. of Nagoya (Japan)
PS-11-09
Electronic Structures of the Interface in γ-Nb4N3/AlN Superlattice Structures○
Tomoki Yamaguchi1, Takahiro Kawamura1, Toru Akiyama1, Atsushi Kobayashi2, 1. The Univ. of Mie(Japan), 2.The Univ. of Tokyo (Japan)
PS-11-10
Structural Stability and Electronic Properties of (RhGa)2O3 and (RhAl)2O3 Alloys:A FirstPrinciples Study○
Kenta Matsubara1, Toru Akiyama1,2, Takahiro Kawamura1,2, 1.The Univ. of Mie (Japan), 2.Innovation
Center for Semiconductor and Digital Future (Japan)
PS-11-11
Minority Carrier Distribution and Response at Inversion Bias Conditions in MOS Capacitor
with Si/SiGe Multi-Quantum Well Structure○
Noriyuki Taoka1, Katsunori Makihara2, Yuji Yamamoto3, Kentaro Yabashi1, Satoshi Ohyama1, Jialun
Cai2, Yusuke Ichino1, Yoshiyuki Seike1, Tatsuo Mori1, 1.Aichi Institute of Technology (Japan), 2.Nagoya
University (Japan), 3.IHP (Germany)
PS-11-12
Improved Polarization and Large Memory window of 3.8V Ferroelectric Hf0.5Zr0.5O2 Capacitor
via IGZO Seeding Layer with Hydrogen Plasma Treatment.
Miao-Hua Hsiung1, ○You-Chi Chen1, Ying-Tsan Tang1, 1.National Central University (Taiwan)
12: Advanced Circuits / Systems Interacting with Innovative Devices and Materials
PS-12-01
A Scalable Equivalent Circuit Model with Lossy Substrate and Layout Dependent Effects for
mm-Wave CMOS Simulation and Design○
Adhi Cahyo Wijaya1, Jinq Min Lin1, Jyh Chyurn Guo1, 1. National Yang Ming Chiao Tung University(Taiwan)
PS-12-02
Design Method of an SoC Emulator with Nonvolatile FPGAs○
Daisuke Suzuki1, Tahahiro Hanyu2, 1. The Univ. of Aizu (Japan), 2.Tohoku Univ. (Japan)
PS-12-03
Reference sampling for high-precision direct ToF sensing○
Keita Yasutomi1, Kazuki Tada1, Hirofumi Saita2, Osamu Watase2, Keiichiro Kagawa1, Shoji
Kawahito1, 1. Shizuoka University (Japan), 2.Suruga Seiki Corporation (Japan)
PS-12-04 (Late News)A 59–93 GHz Low-Noise Amplifier with 15.7 ± 1.5 dB Gain for Wireless Communications in
90-nm CMOS○
Tzu-Wei Cheng1, Chia-Sung Chiu2, Guo-Wei Huang2, Kun-Ming Chen2, Liang-Chung Shen2,
Lin-Kun Wu1, 1. National Yang Ming Chiao Tung Univ. (Taiwan), 2.Taiwan Semiconductor ResearchInst. (Taiwan)

Wednesday, September 4
Room A(407, 4th Floor)

Room B(408, 4th Floor)

Room C(409, 4th Floor)

Room D(Medium Hall, 2nd Floor)

01: Advanced CMOS: Material
Science / Process Engineering /Device Technology
A-5:Ferroelectric Devices

02: Advanced and Emerging
Memories / New Applications
B-5:In-Memory andUnconventional Computing II

04: Power / High‐speed Devices
03: Heterogeneous and 3D
and Materials
Integration / Interconnect /D-5:SiC MOS Interfaces
MEMS
C-5:Advanced Metallization II(9:00-10:00)
Session Chair:
Kasidit Toprasertpong(The Univ. of Tokyo),
Shibun Tsuda(Renesas Electronics Corp.)(9:00-10:30)
Session Chair:
Kazuyuki Kouno(Nuvoton Technology Corp. Japan),
Halid Mulaosmanovic(GlobalFoundries)(9:00-10:00)
Session Chair:
Xun Gu (ASM Japan),
Takashi Matsumoto(Tokyo Electron Technology Solutions Ltd.)

9:00 A-5-01 (Invited)
Gate Stack Engineering of
Ferroelectric HfZrO2 from
Multi-Level Non-Volatile
Memory (NVM) to Analogbased Synapse○
Min-Hung Lee1, Zhao-Feng
Luo1, Kuo-Yu Hsing2, Fu-Shen
Chang1, Jia-Yang Lee1, Yii-Tay
Chang1, Cheng-Hong Liu1,
1.National Taiwan Univ.
(Taiwan), 2.National Yang Ming
Chiao Tung Univ. (Taiwan)

9:00 B-5-01 (Invited)
Online Training with Analog
RRAM Chips
Qi Qin1, Yue Xi1, ○Bin Gao1,
1.
 Tsinghua Univ. (China)

9:00 D-5-01 (Invited)
9:00 C-5-01
Stabilization of Liquid-Vapor Comprehensive Research on
Nitrided SiO2/4H-SiC
Two-Phase Flow Boiling in
Microchannel by Manifold
Interfaces
with Flow Diode Structure for ○Heiji Watanabe1, Takuma
Advanced Thermal
Kobayashi1, 1.Osaka Univ.
Management(Japan)○Hongyuan SHI1, PaulBRUAND2, RyotoYANAGISAWA1, Laurent
JALABERT1,2, Soo Hyeon KIM1,2,
Masahiro NOMURA1, 1. IIS, The
Univ. of Tokyo (Japan), 2.LIMMS/IIS-CNRS, The Univ. of Tokyo(Japan)(9:00-10:30)
Session Chair:
Tomoya Ono (Kobe Univ.),
Katsuhiro Kutsuki(Toyota Central R&D Labs., Inc.)

9:15 C-5-02
From design to manufacturing:new methods to fix themechanical problems
associated with device
production○
Lionel VIGNOUD1, Benjamin
VAVRILLE3, Laurent Luc
CHAPELON3, Rafael ESTEVEZ2,
1.
 Univ. Grenoble Alpes, CEA, Leti
(France), 2.Univ. Grenoble Alpes,
Laboratoire SIMaP (France),
3.
STMicroelectronics (France)

9:30 C-5-03
9:30 B-5-02
9:30 A-5-02
Material Parameter Extraction
Voltage-Operating Reservoir
Impact of Amorphous TiN
Method at Low Temperature
Metal-Cap with High Residual Computing Utilizing a
Ferroelectric Source Follower With Simple Measurement andStress on Ferroelectricity of○
1
3D Electromagnetic Analysis
Hf0.5Zr0.5O2 for FeFET
Rikuo Suzuki , Kasidit
Memory with Low Voltage
Toprasertpong1, Ryosho Nakane1, ○Taiga Fukumori1,2, Norinao
Operation
Eishin Nako1, Mitsuru Takenaka1, Kouma1,2, Yoshiyasu Doi1,2,○
Shinichi Takagi1, 1.Univ. of Tokyo Shintaro Sato1,2, 1. Fujitsu Ltd.
TADASHI YAMAGUCHI1,
Shibun Tsuda1, Takahiro Kono1, (Japan)(Japan), 2.RIKEN Center for
Yoshiki Yamamoto1, Atsushi Amo1,
Quantum Computing (Japan)
Kazuyuki Omori1, Seiji
Muranaka1, Masao Inoue1,
1.Renesas Electronics Corp.
(Japan)9:30 D-5-02
Understanding of the effect ofthermodynamic conditions on
4H-SiC surface nitridation
kinetics based on modeling of
surface nitridation kinetics○
Tianlin Yang1, Takashi Onaya2,
Koji Kita1,2, 1.Department ofMaterials Engineering, The
University of Tokyo (Japan),2.
Department of Advanced
Materials Science, The
University of Tokyo (Japan)

Room E(401, 4th Floor)

Room F(402, 4th Floor)Wednesday, September 4
Room G(403, 4th Floor)

Room H
Room J(Small Hall, 2nd Floor) (Main Studio, 1st Floor)

Room K(404, 4th Floor)

Room M
Room N(Special Conference Room, 4th Floor) (Studio 1, 1st Floor)

07: Organic / Molecular/ Bio‐electronics
G-5:Advanced Devices for
Medical Applications

08: Low Dimensional Devices
and Materials
H-5:Characterization-II

09: Novel Functional / Quantum /Spintronic Devices and Materials
J-5:Novel devices forneuromorphic applications

11: Advanced Materials:
Synthesis / Crystal Growth /Characterization
M-5:Advanced Materials andThin Films(9:00-10:15)
Session Chair:Hisashi Kino (Kyushu Univ.),
Hiroaki Takehara(The Univ. of Tokyo)(9:00-10:15)
Session Chair:
Satoshi Hiura (Hokkaido Univ.),
Toshifumi Irisawa (AIST)(9:00-10:00)
Session Chair:
Yoshifumi Nishi (Toshiba Corp.),
Takashi Tsuchiya (NIMS)(9:00-10:15)
Session Chair:
Taizoh Sadoh (Kyushu Univ.),
Hirokazu Tatsuoka(Shizuoka Univ.)

9:00 H-5-01 (Invited)
9:00 G-5-01
Modulation of 2D
CMOS Chip for Retinal
Prosthesis with Supply Voltage semiconductors by chemical
procedures
Monitoring Circuit forConstant-Current Stimulation ○Daisuke Kiriya1, 1. The Univ. of○
1
Tokyo (Japan)
Yuki Nakanishi , Hattori
Takaya1, Wisaroot1
Sriitsaranusorn , Kuang-Chih
Tso1, Kenzo Shodo2, Hironari
Takehara1, Yoshinori Sunaga1,
Makito Haruta1,3, Hiroyuki
Tashiro1,4, Yasuo Terasawa1,2, Jun
Ohta1, Kiyotaka Sasagawa1,
1.Nara Inst. of Sci. and Tech.
(Japan), 2.Nidek Co. LTD.
(Japan), 3.Chitose Inst. of Sci.
and Tech. (Japan), 4.Kyushu Univ.
(Japan)9:00 J-5-01 (Invited)
2D lead-tin halides forenergy-efficient neuromorphic
electronic devices○
Maria Loi Antonietta1, 1. Univ. of
Groningen (Netherlands)

9:00 M-5-01
Suppressed density-change of
Cr-incorporated MnTe thinfilm for phase-change memory○
Mihyeon Kim1, Yi Shuang2,
Daisuke Ando1, Yuta Saito1,3, Yuji
Sutou1,2, 1. Graduate Sch. ofEngineering, Tohoku Univ.
(Japan), 2.WPI Advanced
Institute for Materials Research,
Tohoku Univ. (Japan), 3.Research
center for Green X-Tech, Tohoku
Univ. (Japan)

9:15 M-5-02
Ni-Induced Layer Exchange ofMultilayer Graphene
Interconnects on Insulator○
Hiromasa Murata1, Katsuhisa
Murakami1, Kaoru Toko2,
Masayoshi Nagao1, 1.AIST(Japan), 2.Univ. of Tsukuba(Japan)9:15 G-5-02
Development of Invisible
Human-Machine Interface
Using Intraoral PPG Sensor○
Aoi Kataura1, Bang Du2, Kohei
Nakamura2, Ryo Hasegawa2,
Beiyutong Huang1, Takafumi
Fukushima2, Koji Kiyoyama3,
Tetsu Tanaka1, 1. Department of
Biomedical Eng., Graduate
School of Biomedical Eng.,
Tohoku Univ. (Japan),2.
Department of Mechanical
Systems Eng., Graduate School ofEng., Tohoku Univ. (Japan),3.
Department of Electrical andElectronics Eng., Nagasaki Inst.
of Applied Sci. (Japan)
9:30 G-5-03
Fabrication of ThreeDimensional Force Image
Sensor with 22.6µm Spatial
Resolution and 70ms Temporal
Resolution○
Hiromasa Ito1, Mizuki Odaira1,
Hideo Doi1, Kensuke Murakami1,
Ken Ogasahara2, Satoshi
shimizu2, Tomoko Horio1,
Daisuke Akai1, Takeshi Hizawa1,
Yong-Joon Choi1, Kazuhiro
Takahashi1, Toshihiko Noda1,
Kazuaki Sawada1, 1.Toyohashi
Univ. of Tech (Japan), 2.Daikin
Finetech Ltd. (Japan)

9:30 J-5-02
9:30 H-5-02
Iono-magnonic Reservoir
Why does everyone transfer
MoS2 grown on sapphire to a Si Computing utilizing Spin Wave
substrate?-Interaction between Manipulation by ProtonGating
MoS2/sapphire○○
Shuhong Li1, Keisuke Atsumi1,
Wataru Namiki1, Daiki
Tomonori Nishimura1, Kaito
Nishioka1, Yuki Nomura2, Kazuo
Kanahashi1, Yoshiki Sakuma2,
Yamamoto2, Kazuya Terabe1,
Kosuke Nagashio1, 1. The Univ. of Takashi Tsuchiya1, 1.NIMS
Tokyo (Japan), 2.NIMS (Japan)(Japan), 2.JFCC (Japan)

9:30 M-5-03
Crystalline Phase Transition of
Ultra-thin Ni-silicide Filmduring SiH4 Exposure○
Shun Tanida1, Noriyuki Taoka2,
Katsunori Makihara1, 1.Nagoya
Univ. (Japan), 2.Aichi Inst. oftech. (Japan)

Wednesday, September 4
Room A(407, 4th Floor)

Room B(408, 4th Floor)

Room C(409, 4th Floor)

Room D(Medium Hall, 2nd Floor)

01: Advanced CMOS: Material
Science / Process Engineering /Device Technology
A-5:Ferroelectric Devices

02: Advanced and Emerging
Memories / New Applications
B-5:In-Memory andUnconventional Computing II

9:45 A-5-03
Correlative Behavior between
Defect Generation andFerroelectricity in Hf0.5Zr0.5O2○
Yukinori Morita1, Hiroyuki Ota1,
Shutaro Asanuma1, Shinji
Migita1, 1. AIST (Japan)

9:45 D-5-03
9:45 C-5-04
9:45 B-5-03
Transient current
Introduction of thick AlN
Domain-Specific CiM Design
coating on Si for 3D-IC thermal measurements and analysis infor 3D Object Detection
charge pump method for SiC
Network with Augmented Point management○
p-MOSFETs
Cloud, Multi-Stage
Takeki Ninomiya1, Takeshi
1
2○
Quantization Aware Training, Takagi , Masakazu Mori ,Takuya Hoshii1, Kotaro Ano1,
1
and U-Quantization
Masaaki Niwa , Tadahiro
Takashi Yoda2, Takayuki Ohba2,○
Kuniyuki Kakushima1, 1. School of
Ayumu Nagai1, Yuya Ichikawa1, Kuroda1, 1. The Univ. of Tokyo
Chihiro Matsui1, Ken Takeuchi1, (Japan), 2.Ryukoku Univ. (Japan) Eng., Tokyo Tech (Japan), 2.WOW
1.
 The Univ. of Tokyo (Japan)
Alliance, Tokyo Tech (Japan)

04: Power / High‐speed Devices
03: Heterogeneous and 3D
and Materials
Integration / Interconnect /D-5:SiC MOS Interfaces
MEMS
C-5:Advanced Metallization II

10:00 B-5-04
Highly Robust and Large-Scale
Quantized Neural Networks
Using Hemi-Cylindrical
Vertical NAND Flash Memory○
Jin Ho Chang1, Ji Ho Uhm2,
Joonggyu Kim3, Eunmee Kwon3,
Woo Young Choi1, 1. Seoul
National University (Korea),
2.
Sogang University (Korea), 3.SKhynix Inc. (Korea)

10:00 D-5-04
Impact of Interface Structure
on Electronic States in 4H-SiC
Inversion Layer○
Sachika Nagamizo1, Hajime
Tanaka1, Nobuya Mori1, 1.Osaka
Univ. (Japan)

10:15 B-5-05 (Late News)
Quantized Convolutional
Neural Network with
Memristor Crossbar Arraybased Kernel and Activation
Operations○
Jinwoo Park1, Sangwook Youn1,
Hyungjin Kim1, 1. Hanyang Univ.
(Korea)10:15 D-5-05
DFT study on relation between
electronic structure and areal N
atom densityat 4H-SiC/SiO2
after NO annealing○
Nahoto Funaki1, Kosei
Sugiyama1, Mitsuharu Uemoto1,
Tomoya Ono1, 1.Grad. Schl. Eng.,
Kobe Univ. (Japan)

Room E(401, 4th Floor)

Room F(402, 4th Floor)Wednesday, September 4
Room G(403, 4th Floor)

Room H
Room J(Small Hall, 2nd Floor) (Main Studio, 1st Floor)
08: Low Dimensional Devices
and Materials
H-5:Characterization-II

Room K(404, 4th Floor)

Room M
Room N(Special Conference Room, 4th Floor) (Studio 1, 1st Floor)

09: Novel Functional / Quantum /Spintronic Devices and Materials
J-5:Novel devices forneuromorphic applications

11: Advanced Materials:
Synthesis / Crystal Growth /Characterization
M-5:Advanced Materials andThin Films

9:45 H-5-03
9:45 J-5-03
9:45 G-5-04
Thermal-activation-type
Threshold Adjustable Artificial
Development of CSC-bypass
Electron Transport Behavior in Neuron
Cuff Electrode for Recording○
MOCVD MoS2 Film
Neural Activity on the Full
Qian He1, Hailiang Wang1, Yishu○
Circumference of Cervical
Zhang1, Yang Xu1, Bin Yu1,
Keisuke Atsumi1, Shuhong Li1,
1
1.
Spinal Cord
Tomonori Nishimura , Kaito Zhejiang University (China)○
Kanahashi1, Vincent Tung1,
Kazushi Tsuji1, Atsuhiko2
32
Ninomiya , Naoki Iwanuma ,Yoshiki Sakuma , Kosuke
Chenxi Qiu3, Shutaro Oba3,
Nagashio1, 1. The Univ. of Tokyo
4
Hisashi Kino , Takafumi(Japan), 2.National Institute of
Fukushima1,3, Kuniyasu
Materials Science (Japan)
Niizuma2,5,6, Hidenori Endo2,
1,3 1.
Tetsu Tanaka ,  Graduate
School of Biomedical Eng.,
Tohoku Univ. (Japan),2.
Department of Neurosurgery,
Tohoku Univ. Graduate School of
Medicine (Japan), 3.Graduate
School of Eng., Tohoku Univ.
(Japan), 4.Graduate School of
ISEE, Kyushu Univ. (Japan),5.
Department of NeurosurgicalEng. and Translational
Neuroscience, Graduate Schoolof Biomedical Eng., Tohoku Univ.
(Japan), 6.Department of
Neurosurgical Eng. andTranslational Neuroscience,
Tohoku Univ. Graduate School of
Medicine (Japan)

9:45 M-5-04
Dispersibility of Colloidal PbS
Quantum Dot in Organic
Solvents and its Effect on theSize Classification Process
Using Membranes○
Jun Tanaka1, Seiya Ikeda1,
Nozomu Yoshikuni1, Kohki
Mukai1, 1. Yokohama National
Univ. (Japan)

10:00 H-5-04
Development of a highly
sensitive detection module
incorporating a chargesensitive infrared
phototransistor and a Ge
hemispherical mirror○
Souichi Nakai1, Fumiyuki
Inamura1, Sunmi Kim2, Mikhail
Patrashin2, Iwao Hosako2,
Susumu Komiyama2,3, Kenji
Ikushima1, 1. Tokyo Univ. of
agriculture and Technology(Japan), 2.NICT (Japan), 3.Dept.
of Basic Science, Univ. of Tokyo(Japan)

10:00 M-5-05 (Late News)
Epitaxial Growth of CoFe/Ge
Stacked Structures on
Perpendicularly Magnetized
MnGa for Spin-Valve Devices○
Makoto Nishioka1, Michihiro
Yamada2, Deepak Kumar3,
Takamasa Usami2,1,4, Shinya
Yamada2,1,4, Sigemi Mizukami3,5,
Kohei Hamaya2,1,4, 1. Grad. Sch.
Eng. Sci., Osaka Univ. (Japan),2.
CSRN, Grad. Sch. Eng. Sci.,
Osaka Univ. (Japan), 3.WPIAIMR, Tohoku Univ. (Japan),
4.
OTRI-SPIN, Osaka Univ.
(Japan), 5.CSIS, Tohoku Univ.
(Japan)07: Organic / Molecular/ Bio‐electronics
G-5:Advanced Devices for
Medical Applications

10:00 G-5-05
Lactate Sensing Probe with
Deep Trench Structure forAnalyzing Cancer Cells in
Brain Tissue○
CHENXI QIU1, Naoki
Iwanuma1, Kazushi Tsuji1,
Shutaro Oba1, Takafumi
Fukushima1, Tetsu Tanaka1,1.
 Univ. TOHOKU (Japan)

Wednesday, September 4
Room A(407, 4th Floor)

Room B(408, 4th Floor)

Room C(409, 4th Floor)

Room D(Medium Hall, 2nd Floor)

01: Advanced CMOS: Material
Science / Process Engineering /Device Technology
A-6:Modeling, Simulation andCharacterization

02: Advanced and Emerging
Memories / New Applications
B-6:3D NAND Flash Memory

03: Heterogeneous and 3D
Integration / Interconnect /MEMS
C-6:MEMS and Advanced
Metallization II

04: Power / High‐speed Devices
and Materials
D-6:SiC Power Devices

06: Energy Harvesting andConverting Devices and Materials
F-6:Solar cells(10:45-12:15)
Session Chair:
Pin Su (NYCU),
Nobuyuki Mise
(Hitachi High-Tech Corp.)(10:45-12:15)
Session Chair:
Ken Takeuchi(The Univ. of Tokyo),
Keiji Hosotani (KIOXIA Corp.)(10:45-12:00)
Session Chair:
Takeo Minari (NIMS),
Akinobu Yamaguchi(Toyo Univ.)(11:00-12:15)
Session Chair:
Shinsuke Harada (AIST),
Kohei Adachi(Mitsubishi Electric)(10:30-12:00)
Session Chair:Takeshi Tayagaki (AIST),
Kentaro Watanabe(The Univ. of Tokyo)

Room E(401, 4th Floor)

Room F(402, 4th Floor)

10:30 F-6-01 (Invited)
Development of functional
thin-film materials for Si solar
cells and their application to
perovskite/Si tandems○
Takuya Matsui1, Hitoshi Sai1,
1.AIST (Japan)
10:45 B-6-01 (Invited)
10:45 C-6-01 (Invited)
10:45 A-6-01 (Invited)
MEMS Activities at AIST:
Milli-Kelvin Analysis Revealing Metal Induced Lateral
Ultrathin Piezoelectric MEMS
the Role of Band-edge States in Crystallization (MILC)○
Techniques for Highly Scalable Yusuke Takei1, 1. Natl. Inst. of
Cryogenic MOSFETs○
1
1
Vertical Si Channel in 3D Flash Adv. Indus. Sci. and Tech. (AIST)
Hiroshi Oka , Hidehiro Asai ,Memory(Japan)Takumi Inaba1, Shunsuke
1
1
Shitakata , Hitoshi Yui , Hiroshi ○Noritaka Ishihara1, Yusuke
11
1
1
Fuketa , Shota Iizuka , Kimihiko Shimada , Takamitsu Ochi ,Kato1, Takashi Nakayama1,
Satoshi Seto1, Haruki Matsuo1,
Takahiro Mori1, 1. National
Hiroki Yamashita1, Sho Morita1,
Institute of Advanced Industrial Masafumi Ukishima1, Yusuke
Science and Technology (AIST)
Arayashiki1, Suzuka Kajiwara1,(Japan)Katsuya Nishiyama1, Akiyuki
Murayama1, Kikuko Sugimae1,
Shinji Mori1, Yuta Saito1, Takeshi
Shundo1, Aki Maeda1, Hiroyuki
Kamiya2, Yasuhiro Uchiyama1,
Makoto Fujiwara1, Fumiki Aiso1,
Katsuyuki Sekine1, Norio Ohtani1,1.
 Kioxia Corporation (Japan),2.
Western Digital Corporation(Japan)
11:00 D-6-01 (Invited)
Ultra-high Voltage SiC Bipolar
Devices for GreenInfrastructure○
Naoki Watanabe1, Haruka
Shimizu1, Akio Shima1, 1.Hitachi,Ltd. (Japan)

11:15 A-6-02
Comparative Analysis of
Cryogenic Threshold Voltage
and On-current Variability in
65nm Bulk and FDSOIMOSFETs○
Zihao Liu1, Tomoko Mizutani1,
Kiyoshi Takeuchi1, Takuya
Saraya1, Hiroshi Oka2, Takahiro
Mori2, Masaharu Kobayashi1,
Toshiro Hiramoto1, 1.The Univ. ofTokyo (Japan), 2.The National
Inst. of Advanced Indus. Sci. andTech. (Japan)

11:15 B-6-02
Optical Emission Spectrum
Feature-based Machine
Learning Technology for
Monitoring High Aspect Ratio
Contact Etching-induced
Defects of 3D NAND Flash
Memory○Byung Yong Choi1, Gae-won
You1, Deokwon Sim1, Jongik
Hong1, Hyun Soo Lee1, Jonghyun
Kim1, Sangwon Baek1, Won Jun
Choi1, Minsun Ryu1, Seungyoon
Kim1, Hoyun Jung1, Jun Haeng
Lee1, Sung-Il Cho1, Mincheol
Park1, Bong-Tae Park1, Sung Hoi
Hur1, 1. Samsung Electronics Co.,
Ltd. (Korea)

11:15 C-6-02
Pilot-Line Ready Fabrication
Process of High Aspect Ratio
Nanoneedles for Biomedical
Applications○
Moeen Ghafoor Piracha1, Jun
Wang1, Alnazer Mohamed1,
Antonio Palombizio1, Bivragh
Majeed1, Abhilash Paneri1, 1. Imec
(Belgium)

11:00 F-6-02
Our Recent Approaches for Si
Tandem Solar Cells andModules○
MASAFUMI YAMAGUCHI1,
Tatsuya Takamoto2, Hiroyuki
Juso2, Kyotaro Nakamura1, Ryo
Ozaki1, Nobuaki Kojima1, Yoshio
Ohshita1, 1. Toyota Tech Inst.
(Japan), 2.Sharp Corp. (Japan)

11:15 F-6-03
Scheil-Gulliver Model Studies
on Al-paste-based SiGe Film
Growthfor on-silicon Multi-junction
Solar Cells○
Yohkoh Hineno1, Kiyohide
Murakami2, Kohei Ito3, Takeshi
Sato3, Satoru Miyamoto3, Shota
Suzuki4, Hideaki Minamiyama4,
Marwan Dhamrin4,5, Noritaka
Usami3,6,7, 1. Tokai High School(Japan), 2.Tajimi Kita HighSchool (Japan), 3.Grad. Eng.,
Nagoya Univ. (Japan), 4.Toyo
Aluminium K.K. (Japan), 5.Osaka
Univ. (Japan), 6.InFuS, Nagoya
Univ. (Japan), 7.IMaSS, Nagoya
Univ. (Japan)

Wednesday, September 4
Room G(403, 4th Floor)

Room H
Room J(Small Hall, 2nd Floor) (Main Studio, 1st Floor)

08: Low Dimensional Devices
07: Organic / Molecular
and Materials/ Bio‐electronics
H-6:Device-III
G-6:Advanced Lab-on-Chip
Devices and Organic/Inorganic
Hybrid Electronics(10:45-12:15)
Session Chair:Cheng-Hsien Liu(National Tsing Hua Univ.),
Toshinori Matsushima(Kyushu Univ.)

09: Novel Functional / Quantum /Spintronic Devices and Materials
J-6:Novel advanced materials

Room K(404, 4th Floor)
10: Thin Film Electronics: Oxide/ Non‐single Crystalline / Novel
Process
K-6:Group-IV Thin-film
Technologies(10:45-11:30)(10:30-12:00)(10:45-11:45)
Session Chair:
Session Chair:
Session Chair:
Takamasa Kawanago (AIST),
Michael Quinsat (KIOXIA Corp.), Toshiya Murakami
Yusuke Hoshi (Tokyo City Univ.) Takafumi Fujita (Osaka Univ.)(KIOXIA Corp.),Shin-ichiro Kuroki(Hiroshima Univ.)

Room M
Room N(Special Conference Room, 4th Floor) (Studio 1, 1st Floor)
11: Advanced Materials:
Synthesis / Crystal Growth /Characterization
M-6:Low Dimensional
Materials

12: Advanced Circuits / Systems
Interacting with Innovative
Devices and Materials
N-6:Compute-in-Memory(10:45-12:00)
Session Chair:
Kentaro Watanabe(Shinshu Univ.),
Tomohiro Yamaguchi(Kogakuin Univ.)(10:45-11:45)
Session Chair:
Koh Johguchi (Shinshu Univ.),
Jun Furuta(Okayama Prefectural Univ.)

10:45 M-6-01 (Invited)High pressure synthesis ofboron nitride and diamond
single crystals and theirimpurity control○
Takashi Taniguchi1, 1.NIMS(Japan)10:45 N-6-01 (Invited)Towards Efficient and Precise
Analog Compute-in-Memory
Circuits○
Kentaro Yoshioka1, Shimpei
Ando1, Satomi Miyagi1,
Yung-Chin Chen1, Wenlun
Zhang1, 1. Keio Univ. (Japan)

11:15 M-6-02
Tuning growth conditions forenlarging CVD h-BN crystalson Si substrate○
Tomohiro Okamoto1, Kentaro
Watanabe1,2, 1.Shinshu Univ.
(Japan), 2.IFES, Shinshu Univ.
(Japan)

11:15 N-6-02
A Saliency-Aware Analog
Computing-In-Memory Macrowith SAR-Embedded Saliency
Detection Technique○Shimpei Ando1, Yung-Chin
Chen1,2, Satomi Miyagi1, Wenlun
Zhang1, Kentaro Yoshioka1, 1. Keio
Univ. (Japan), 2.National Taiwan
Univ. (Taiwan)

10:30 K-6-01 (Invited)
Low temperature poly-Ge TFTs
on glass and plastic substrates○
Akito Hara1, Hitoshi Suzuki1,
Sho Suzuki1, Yuto Ito1, Daiki
Goshima1, Akito Kurihara1,
1.Tohoku Gakuin University(Japan)10:45 J-6-01
Polarization-Dependent
Photocurrent in a
Quadrilateral-Shaped
Crystalline Te Chip○
Hiro Munekata1, Takuya
Satoh1,2, 1. Tokyo Inst. Tech.
(Japan), 2.Inst. Molecular Sci.
(Japan)10:45 G-6-01
Construction of Lung Tumor
Microenvironment Lab Chipusing Dielectrophoresis andMicropillar for Drug Testing
Sin-Huei Wang1, ○Xiao-Han
Wang1, Kang-Yun Lee2, Wei-Lun
Sun3, Cheng-Hsien Liu1,
1.Department of Power
Mechanical Engineering,
National Tsing Hua Univ.
(Taiwan), 2.Department ofDivision of Thoracic Medicine,
Taipei Medical Univ. (Taiwan),3.
Pythia Biotech Ltd. (Taiwan)

10:45 H-6-01
Probing super-hydrophobic
Cytop/MoS2 interface
properties○
Yuta Kono1, Tomonori
Nishimura1, Kaito Kanahashi1,
Shunto Arai2, Yasumitsu MIyata3,
Kosuke Nagashio1, 1. the Univ. ofTokyo (Japan), 2.NIMS (Japan),
3.
Tokyo Metropolitan Univ.
(Japan)

11:00 G-6-02
Tumor Lab Chip with Oxygen
Concentration Regulation for
Drug Studies under Hypoxia
Wei-Yu Huang1, ○Tsai-Yu Shih2,
Kang-Yun Lee3, Wei-Lun Sun4,
Cheng-Hsien Liu1, 1. Departmentof Power MechanicalEngineering, National Tsing Hua
Univ. (Taiwan), 2.Institute of
NanoEngineering andMicroSystems, National Tsing
Hua Univ. (Taiwan),3.
Department of Division ofThoracic Medicine, Taipei
Medical Univ. (Taiwan), 4.Pythia
Biotech Ltd. (Taiwan)

11:00 H-6-02
11:00 J-6-02
Wrinkle-Free MoS2 Transistors Plasmonic modulation of chiralwith Improved Characteristic valley-exciton emission in
Variation Achieved by Vacuum two-dimensional transition
metal dichalcogenides
Transfer○
Yuan-Chun Eric Su1, Hsiang-Chi yang Xu1, ○Yunfei Xie1, Jianhua
11
Hu , Jian-Chen Tsai , Chih-Yao Huang2, Zongwen Li1, Qianqian
Shih1, Wen-Hao Chang1,2,
Zhang1, Zhi-Xiang Zhang1, Ming
1.
 National Yang Ming Chiao Tung Huang2, Yue Dai1, Yance Chen1,
Univ. (Taiwan), 2.Academia
Jian Chai1, Yuan Ma1, Xiaochen
Sinica (Taiwan)
Wang1, Hao Ning1, Xinyu Liu1,
Bin Yu1, Ziwei Li2, 1. Zhejiang
Univ. (China), 2.Hunan Univ.
(China)11:00 K-6-02
Improved mobility inpolycrystalline GeSn thin-film
transistors
by multilayered solid-phasecrystallization○
Shintaro Maeda1, Kenta Moto2,
Huang Linyu2, Atsuki Morimoto2,
Keisuke Yamamoto2, Takashi
Suemasu1, Kaoru Toko1, 1.Univ. of
Tsukuba (Japan), 2.Kyushu Univ.
(Japan)

11:15 G-6-03 (Invited)
Semiconductor Physics of Lead
Halide Perovskites○
Yoshihiko Kanemitsu1, 1.Kyoto
Univ. (Japan)

11:15 H-6-03
Band Modulation with
Insulator Insertion between Ni
and PVD-WS2 Films for P-typeContact○
Kaede Teraoka1, Shinya Imai1,
Naoki Matsunaga1, Keita
Kurohara1, Soma Ito1, Kuniyuki
Kakushima1, Hitoshi
Wakabayashi1, 1. Tokyo Inst. of
Tech. (Japan)

11:15 K-6-03
Demonstration of CMOS
Inverter on Polycrystalline Ge
Formed by Solid-phase
Crystallization○
Atsuki Morimoto1, Linyu
Huang1, Kota Igura2, Takamitsu
Ishiyama2, Kaoru Toko2, Dong
Wang1, Keisuke Yamamoto1,
1.
 Kyushu Univ. (Japan), 2.Univ. of
Tsukuba (Japan)

11:15 J-6-03 (Late News)
Variational Neural-Simulation
Hybrid Eigensolver withClassical Shadow○
Yuta Shingu1, Yukun Zhang3,4,
Yuichiro Matsuzaki2, Tetsuro
Nikuni1, Xiao Yuan3,4, Yiming
Huang3,4, 1. Tokyo Univ. of Sci.
(Japan), 2.Chuo Univ. (Japan),3.
Peking Univ. (China), 4.Facultyof Sci. and Engineering (China)

Wednesday, September 4
Room A(407, 4th Floor)

Room B(408, 4th Floor)

01: Advanced CMOS: Material
Science / Process Engineering /Device Technology
A-6:Modeling, Simulation andCharacterization

02: Advanced and Emerging
Memories / New Applications
B-6:3D NAND Flash Memory

11:30 B-6-03
11:30 A-6-03
Analysis of Mechanical Stress
Accurate Evaluation ofInduced in Multi-Stack andEffective Mobility in Si
Number of Wordlines of 3DnMOSFETs at Cryogenic
NAND Flash Memory
Temperature by Introducing○
Quasi-Static C-V Method
Donghyun Kim1, Kihoon Nam1,○
1
1
Chanyang Park1, Jiyoon Kim1,
Yutong Chen , Zhao Jin ,Xueyang Han1, Hiroshi Oka2,
Jinsu Jung1, Sanguk Lee1, Yunsu
Takahiro Mori2, Kasidit
Kim2, Seongjo Park2, Rock-Hyun
Toprasertpong1, Mitsuru
Baek1, 1. Pohang Univ. of Science
Takenaka1, Shinichi Takagi1, 1.The and Technology (Korea), 2.SK
Univ. of Tokyo (Japan),hynix Inc. (Korea)
2.
National Inst. of Advanced
Indus. Sci. and Tech. (Japan)

Room C(409, 4th Floor)

Room D(Medium Hall, 2nd Floor)

03: Heterogeneous and 3D
Integration / Interconnect /MEMS
C-6:MEMS and Advanced
Metallization II

04: Power / High‐speed Devices
and Materials
D-6:SiC Power Devices

06: Energy Harvesting andConverting Devices and Materials
F-6:Solar cells

11:30 D-6-02
11:30 C-6-03
Non-localized Filaments for the Double-Implanted 4H-SiC
Robust Resistive Switching in Superjunction UMOSFET
without Bipolar Degradation
Halide Perovskites○○
Yu Yan1, Hongwei Ge1, Junxin
Kensuke Takenaka1, Takeshi
11Cheng , Xiaohang Zhang ,Tawara1,2, Syunki Narita2,
Cancan Cui1, Mengwei Wang1,
Shinsuke Harada1, 1.AIST
Xuying Liu1, Li Zhang1, Qingqing (Japan), 2.Fuji Electric Co., Ltd.
Sun1, 1. Zhengzhou University(Japan)(China)11:30 F-6-04 (Invited)
Prospects of PV-Recycling inGermany○
Andreas Obst1, Peter Henatsch1,
Susanne Richter1, Peter Dold2,
Elmar Lohmüller3, Sabrina
Lohmüller3, Stephan Riepe3, Dirk
Wagenmann3, 1. Fraunfofer CSP(Germany), 2.Fraunhofer IWKS
(Germany), 3.Fraunhofer ISE(Germany)

11:45 B-6-04
11:45 A-6-04
11:45 C-6-04
11:45 D-6-03
First Demonstration of 3D
A Correction Method of Split
Solution-processable,
A Study of Electrical
Stacked FeFET Memory
C-V Characteristics inCross-linked High-k Polymers Characteristics of State-of-theDevices with Vertical IGZO
MOSFETs by Usingfor High-resolution
Art 1.2-kV SiC Planar andChannel-Last Process for Dense Photopatterning and LowTransmission Line Model for
Trench MOSFETs○
Non-Volatile Memory
Accurate Extraction ofvoltage Electronics
Kazuhiro Suzuki1, Hiroshi Yano1,○○
Effective Mobility
Roman Izmailov1,2, Nicolò
Hongwei Ge1, Yu Yan1, Xiaohang Noriyuki Iwamuro1, 1.Univ. of○Ronchi1, Jie Li1, Mihaela Ioana Zhang1, Cancan Cui1, Junxin
Tsukuba (Japan)
Zhao Jin1, Yutong Chen1,
Xueyang Han1, Hiroshi Oka2,
Popovici1, Kostantine Katcko1,
Chen1, Mengwei Wang1,
Takahiro Mori2, Kasidit
Zhuo Chen1,2, Laurent Breuil1,
Qingqing Sun1, Xuying Liu1,
1.
Toprasertpong1, Mitsuru
Nina Bazzazian1, Kaustuv
 Zhegnzhou University (China)
1
1 1.
1
1
Takenaka , Shinichi Takagi ,  The Banerjee , Iuliana Rachita ,1
Univ. of Tokyo (Japan),Geert Van den bosch , Maarten
2.
Rosmeulen1, Jan Van Houdt1,2,
National Inst. of Advanced
1.
Indus. Sci. and Tech. (Japan)
 imec (Belgium), 2.KU Leuven(Belgium)
12:00 B-6-05
12:00 A-6-05
Assessment and optimization of A Novel Structure Using
the cascaded transistor method P-doped Polysilicon in IGZO
Channel-based 3D NAND
for the direct extraction ofaccess resistance components in Flash
Daewoong Kang1, ○Minkyo
FinFET and NSFET devices.
○
Suh1,2, Gwansun Choi1,2,
Pierre Eyben1, An De
Keersgieter1, Philippe Matagne1, Chaeyeon Jung1,3, Youngho
Hans Mertens1, Thomas
Jung4, 1. Seoul National
Chiarella1, Clément Porret
University (Korea), 2.Chung-Ang
Porret1, Camila Toledo de
University (Korea), 3.Soongsil
Carvalho Cavalcante1, Yong
University (Korea), 4.Daegu
Kong Siew1, Jerome Mitard1,
University (Korea)
Naoto Horiguchi1, 1. Imec
(Belgium)

12:00 D-6-04 (Late News)
Detection of carbon-related
defects in near-surface regionof SiC induced by low-oxygenpartial-pressure annealing○
Chuyang Lyu1, Takashi Onaya1,
Koji Kita1, 1.The University ofTokyo (Japan)

Room E(401, 4th Floor)

Room F(402, 4th Floor)Wednesday, September 4
Room G(403, 4th Floor)

Room H
Room J(Small Hall, 2nd Floor) (Main Studio, 1st Floor)

08: Low Dimensional Devices
07: Organic / Molecular
and Materials/ Bio‐electronics
H-6:Device-III
G-6:Advanced Lab-on-Chip
Devices and Organic/Inorganic
Hybrid Electronics
11:30 H-6-04
Layered NbS2 Contacts
Formed via H2S Reaction with
Nb for High PerformanceWSe2-channel P-type
Transistors○
Koki Hori1,2, Wen-Hsin Chang1,
Toshifumi Irisawa1, Atsushi
Ogura2,3, Naoya Okada1, 1. AIST
(Japan), 2.Meiji Univ. (Japan),
3.
MREL, Meiji Univ. (Japan)

11:45 G-6-04
Improved Perovskite Solar Cell
Performance with Alkali Metal
Hydroxide
Yuki Fujita1, Zhanglin Guo1,○
Toshinori Matsushima1,
1.
 Kyushu Univ. (Japan)

12:00 G-6-05
Exciton Dynamics ofOrganic/2D-Inorganic
Heterostructures
Shuo Xiong1, Jialong Yao1, Yuwei
Wang1, ○Mingsheng Xu1,
1.Zhejiang University (China)

09: Novel Functional / Quantum /Spintronic Devices and Materials
J-6:Novel advanced materials

Room K(404, 4th Floor)

Room M
Room N(Special Conference Room, 4th Floor) (Studio 1, 1st Floor)

10: Thin Film Electronics: Oxide/ Non‐single Crystalline / Novel
Process
K-6:Group-IV Thin-film
Technologies

11: Advanced Materials:
Synthesis / Crystal Growth /Characterization
M-6:Low Dimensional
Materials

12: Advanced Circuits / Systems
Interacting with Innovative
Devices and Materials
N-6:Compute-in-Memory

11:30 K-6-04
Lateral crystallization of
germanium monosulfide thinfilms and its application forfield-effect transistors○
Qinqiang ZHANG1, Ryo
MATSUMURA1, Kazuhito
TSUKAGOSHI1, Naoki
FUKATA1,2, 1. MANA, NIMS
(Japan), 2.Univ. of Tsukuba(Japan)

11:30 M-6-03
Influence of Hydrogen
Desorption Temperature on
Interlayer Distance ofMultilayered GeH Nanosheets
under Ultrahigh Vacuum
Ambient○
Kazuho Matsumoto1, Masaaki
Araidai2, Shigehisa Shibayama1,
Mitsuo Sakashita1, Osamu
Nakatsuka1,2, Tomonori
Nishimura3, Kosuke Nagashio3,
Masashi Kurosawa1, 1. Grad. Sch.
of Eng., Nagoya Univ. (Japan),2.
Inst. of Materials and Systems
for Sustainability, Nagoya Univ.
(Japan), 3.The Univ. of Tokyo(Japan)

11:30 N-6-03
An Ultra-low Power SNN
Co-processor with
Reconfigurable Computing-inMemory Cell Array based on
Differential-pair SRAM and
Memristive Memory○
yaolei Guo1, Liangyao Deng1,
Jinxu Liu1, Chenhao Tang1, Yue
Cheng1, Yishu Zhang1,2,3,
Yongpeng Cheng1,2,3, Yitao Ma1,2,3,
1.College of intergrated circuits,
Zhejiang University (China),
2.
ZJU-Hangzhou Global Scientificand Technological Innovation
Center (China), 3.Zhejiang
ICsprout Semiconductor Co., Ltd(China)11:45 M-6-04
11:45 K-6-05
Comprehensive Study on
Significant improvement of
Li-ion battery anode properties Crystal Growth of CaSi2of Si thin films by preparing
Layers on Si(111) Using Solidinterlayer
Phase Epitaxy○○
Yo Eto1, Koki Nozawa1, Reno
Kagiri Kato1, Shigehisa
Ito1, Takashi Suemasu1, Kaoru
Shibayama1, Mitsuo Sakashita1,
Toko1, 1.The Univ. of Tsukuba
Osamu Nakatsuka1,2, Masashi(Japan)Kurosawa1, 1.Grad. Sch. of Eng.,
Nagoya Univ. (Japan), 2.Inst. ofMaterials and Systems for
Sustainability, Nagoya Univ.
(Japan)Wednesday, September 4
Room A(407, 4th Floor)

Room B(408, 4th Floor)

01: Advanced CMOS: Material
Science / Process Engineering /Device Technology
A-7:Advanced CMOS: CFET
(13:30-14:45)
Session Chair:
Kuniyuki Kakushima(Tokyo Tech),Anabela Veloso (imec)

Room D(Medium Hall, 2nd Floor)

Room E(401, 4th Floor)

02: Advanced and Emerging
Memories / New Applications
B-7:ReRAM, PCRAM, and
FeRAM

04: Power / High‐speed Devices
and Materials
D-7:GaN Power Devices

05: Photonics: Devices /Integration / Related Technology
E-7:Metamaterials andMetasurfaces(13:30-14:45)
Session Chair:
Xu Bai(NanoBridge Semiconductor, Inc.),
Yoshihiro Sato (Tohoku Univ.)(13:30-14:30)(13:30-14:30)
Session Chair:
Session Chair:
Shigeyoshi Usami (Osaka Univ.), Atsushi Ono (Shizuoka Univ.),
Shinya Takashima (Fuji electric) Yuhki Ito(Sumitomo Electric Industries, Ltd.)

13:30 B-7-01
13:30 A-7-01 (Invited)
Resistive Switching Element
Realization of CMOS
scaling toward 22nm embedded
Operation in 3-Dimensional
Stacked FET with Self-Aligned ReRAM and beyond○
Direct Backside Contact
Masahiro Morimoto1, Shunsaku○
Muraoka1, Satoshi Awamura1,
Juhun Park1, Jaehyun Park1,
Jejune Park1, Kyuman Hwang1, Ken Kawai1, Norio Hattori1,
Jinchan Yun1, Dahye Kim1, Sungil Satoru Ito1, Shinichi Yoneda1,
1.
Park1, Jinwook Yang1, Jae Won
 Nuvoton Technology Corp.
Jeong1, Chuljin Yun1, Jinho Bae1, Japan (Japan)
11Daihong Huh , Deukho Yeon ,Sanghyeon Kim1, Seungeun
Baek1, Soomin Son1, Junghan
Lee1, Tae-sun Kim1, Seungjun
Lee1, Sun-Jung Lee1, Sang Wuk
Park1, Bong Jin Kuh1, Daewon
Ha1, Sangjin Hyun1, Su Jin Ahn1,
Jaihyuk Song1, 1. Samsung
Electronics Co., Ltd. (Korea)

Room C(409, 4th Floor)

13:30 D-7-01 (Invited)
13:30 E-7-01 (Invited)Engineering of Channel
Optical Coatings for
Mobility and Threshold Voltage Metamaterials andin AlSiO/AlN/p-type GaN
Metasurfaces○
Metal–Oxide–Semiconductor
Yi-Jun Jen1, 1.National Taipei
Field-Effect Transistors
Univ. of Technology (Taiwan)○
Tetsuo Narita1, Kenji Ito1,
Masakazu Kanechika2, Hiroko
Iguchi1, Shiro Iwasaki1, Daigo
Kikuta1, Emi Kano2, Nobuyuki
Ikarashi2, Kazuyoshi Tomita2,
Masahiro Horita2, Jun Suda2,
Tetsu Kachi2, 1. Toyota Central
R&D Labs. (Japan), 2.Nagoya
Univ. (Japan)

13:45 B-7-02
Metal Doping and Interface
Effects on Oxygen Vacancy
Properties of HfO2-based
RRAM: A First-principles
Computational Study
Di Wu1, ○Pengpeng Sang1, Wei
Wei2, Lu Tai1, Jixuan Wu1,
Xuepeng Zhan1, Jiezhi Chen1,1.Shandong University (China),
2.
Institute of Microelectronics ofChinese Academy of Sciences(China)14:00 A-7-02
Comparative Analysis ofMiddle Dielectric Isolation(MDI) Integration Approaches
in Monolithic Complementary
Field Effect Transistors:‘MDI-First vs MDI-Last’○
Camila Toledo de Carvalho
Cavalcante1, Steven Demuynck1,
Alfonso Sepulveda Marquez1,
Maria Chistiakova1, Subhobroto
Choudhury1, Geert Mannaert1,
Farid Sebaai1, Maryam
Hosseini1, Anne Vandooren1,
Pallavi Puttarame Gowda1,
Emmanuel Dupuy1, BT Chan1,
Hans Mertens1, Jef Geypen1,
Sujith Subramanian1, Lucas
Petersen Barbosa Lima1, Serge
Biesemans1, Naoto Horiguchi1,
1.imec, Leuven, Belgium(Belgium)

14:00 B-7-03
Room temperature produced
chalcogenide superlattices on
300 mm wafer for interfacial
phase-change memory○
Yusuke Miyaguchi1, Kazumasa
Horita1, Takehito Jimbo1, Takeshi
Masuda1, Shutaro Asanuma2,
Noriyuki Miyata2, Junji
Tominaga2, 1. ULVAC, Inc.
(Japan), 2.AIST (Japan)

14:00 D-7-02
Metal/Al2O3/NiOx/AlGaN/GaN
MIS devices with NiOx
interfacial layer: Thresholdvoltage and interface trap
density in comparison withmetal/Al2O3/AlGaN/GaN MIS
devices○
Yuchen Deng1, Jieensi Gelan1,
Kazuya Uryu1,2, Toshi-kazu
Suzuki1, 1. Japan Advanced
Institute of Science andTechnology (Japan), 2.Advantest
Laboratories Ltd. (Japan)

14:00 E-7-02
Polarization-Division
Multiplexing of PCSEL
Enabled by Metasurfaces for
Free-Space OpticalCommunications○
Wen-Chien Miao1,2, Fu-He
Hsiao1,2, Chun-Liang Lin1,
Chi-Wai Chow3, Yu-Heng Hong2,
Hao-Chung Kuo2,3, 1. Department
of Electrophysics, College of
Science,National Yang Ming
Chiao Tung Univ. (Taiwan),2.
Semiconductor Res. Center,
Foxconn Res. (Taiwan),3.
Department of Photonics,
College of Electrical andComputer Engineering, National
Yang Ming Chiao Tung Univ.
(Taiwan)

Room F(402, 4th Floor)Wednesday, September 4
Room G(403, 4th Floor)

Room H
Room J(Small Hall, 2nd Floor) (Main Studio, 1st Floor)

Room K(404, 4th Floor)

Room M
Room N(Special Conference Room, 4th Floor) (Studio 1, 1st Floor)

07: Organic / Molecular/ Bio‐electronics
G-7:Organic Electronics I

08: Low Dimensional Devices
and Materials
H-7:Device-IV

10: Thin Film Electronics: Oxide/ Non‐single Crystalline / Novel
Process
K-7:Ferroelectric Materials
and Late News

11: Advanced Materials:
Synthesis / Crystal Growth /Characterization
M-7:Group IV Materials

12: Advanced Circuits / Systems
Interacting with Innovative
Devices and Materials
N-7:Advanced Circuits andDevices(13:30-14:45)
Session Chair:
Huang-Ming Philip Chen
(NYCU),
Seiya Yokokura (Hokkaido Univ.)(13:30-14:30)
Session Chair:
Takayuki Arie
(Osaka Metropolitan Univ.),
Satoshi Hiura (Hokkaido Univ.)(13:30-15:00)
Session Chair:Chih-Yu Chang (TSMC),
Hiroyuki Nishinaka(Kyoto Inst. of Technology)(13:30-14:45)
Session Chair:
Yuji Yamamoto (IHP),
Katsunori Makihara(Nagoya Univ.)(13:30-14:30)
Session Chair:
Kousuke Miyaji (Shinshu Univ.),
Takeshi Yoshida (Hiroshima Univ.)

13:30 H-7-01
13:30 G-7-01 (Invited)
Electrical Detection of
Molecular design of organic
thermoelectric materials: From Parts-per-billion NO2 in Air
precise doping to device
Atmosphere Using Cofunctionalization
phthalocyanine-Modified○
1 1.
Graphene Field-EffectChong-an Di ,  Institute ofChemistry, Chinese Academy of Transistors○
Sciences (China)
Kazuki Kikawada1, Naoki
Yazawa1, Ryudai Nakanishi1,
Takashi Ikuta1, Kenzo Maehashi1,1.Tokyo Univ. of Agri. and Tech.
(Japan)

13:30 K-7-01
An Ultra-thin Hf1-xZrxO2(4nm) Processing for a Low
Thermal Budget (350℃) but
Promising Ferroelectricity○
Chia-Wei Hsu1, Jia-Hua Jhang1,
Zheng-Lin Yang1, Chih-Yu Teng1,
Yuan-Chieh Tseng1, 1.National
Yang Ming Chiao Tung Univ.
(Taiwan)

13:30 M-7-01 (Invited)
High-precision 3D integrationof catalytic silicon nanowires
for high performanceelectronics○
Linwei Yu1, 1. Nanjing Univ.
(China)13:30 N-7-01"A 0.67A/mm2 Fully Package
Integrated CMOS Class-D LC
Oscillator Converter"○
Atsuya Kakuta1, Kousuke
Miyaji1, 1. Shinshu University(Japan)13:45 H-7-02
WS2 gas sensor based on theevolution of
hyperpolarizability: evaluating
the influ-ence of watermolecules○
Kuang Yao Lo1, Ting-Yu Yen1,
Yang-Hao Hung1, Yu-Zen Lee1,
Yen-Teng Ho2, Yann-Wen Lan3,
Chiu-Hsien Wu4, Kuan-Ming
Hung5, 1.National Cheng Kung
University (Taiwan), 2.National
Yang Ming Chiao Tung
University (Taiwan), 3.National
Taiwan Normal University(Taiwan), 4.National Chung
Hsing University (Taiwan),5.
National Kaohsiung Universityof Science and Technology(Taiwan)

13:45 K-7-02
BEOL-Compatible In2O3
Ferroelectric Transistors by
Sputtering with Maximum
Mobility of 60 cm2/V×s andMemory Window of 3V○
Zhao-Feng Lou1, Cheng-Hong
Liu1, Che-Chuan Lee2,
Kuan-Chou Buu2, Yii-Tay Chang1,
Shu-Tong Chang3, Yu-De Lin4,
Ming-Han Liao5, I-Chun Cheng2,
Min-Hung Lee1, 1. Program for
Semiconductor Devices,
Materials, and Heterointegration, Graduate School of
Advanced Technology, National
Taiwan Univ. (Taiwan),2.
Graduate Institute of Photonics
and Optoelectronics, National
Taiwan Univ. (Taiwan),3.
Department of ElectricalEngineering, National Chung
Hsing Univ. (Taiwan),
4.
Electronic and Optoelectronic
System Research Laboratories,
Indus. Tech. Res. Inst. (Taiwan),5.
Department of MechanicalEngineering, National Taiwan
Univ. (Taiwan)

14:00 H-7-03
14:00 G-7-02 (Invited)
Fabrication of Single-Molecule 2D Material Hetero-structures
Electret Memory Devices based for High Responsivity
Photo-transistors in Lateralon Fe-FET Architecture○
Masaru Fujibayashi1, Sadafumi Device Architecture
2 1.
Nishihara ,  National Institute of ○Yu-Han Huang1,2, Po-Cheng
Technology, Ube College
Tsai2, Dun-Jei Zhang2,(Japan), 2.Graduate School of
Chao-Hsin Wu1, Shih-Yen Lin2,
Advanced Science and1.National Taiwan University
Engineering, Hiroshima(Taiwan), 2.Res. Center for
University (Japan)
Applied Sci. (Taiwan)

14:00 K-7-03
Comparison of Low-Frequency
Noise Characteristics inFerroelectric field-effecttransistors for Two Opposite
Gate Voltage Sweep Directions○
Ciao-Fen Chen1,2, Dong-Ru
Hsieh1, Tien-Sheng Chao1,
Shun-Tsung Lo1,3, Yen-Fu Lin2,
1.The Univ. of Yang Ming Chiao
Tung (Taiwan), 2.The Univ. of
Chung Hsing (Taiwan), 3.Center
for Emergent Functional Matter
Science, The Univ. of Yang Ming
Chiao Tung (Taiwan)

13:45 N-7-02
Ultra-low quiescent current
capacitor-less low-dropout
linear regulator with enhanced
load-transient response○
Jingbo Li1, Yosuke Mizuno1,
Hikaru Sebe1, Shintaro Sumi1,
Daisuke Kanemoto1, Tetsuya
Hirose1, 1. Osaka Univ. (Japan)

14:00 M-7-02
Photoluminescence ofThree-Dimensional SelfAligned SiGe Nanodots○
Wei-Chen Wen1, Dong Wang2,
Keisuke Yamamoto2, Markus
Andreas Schubert1, Roland
Sorge1, Bernd Tillack1,3, Yuji
Yamamoto1, 1.IHP - LeibnizInstitut für innovative
Mikroelektronik (Germany),
2.
Kyushu Univ. (Japan),
3.
Technische Universität Berlin(Germany)

14:00 N-7-03
Cascode Current Mirror of
GAA Si NS MOSFETs with
Metal Sidewall Source/Drain○
Kuan-Ju Chou1, Yiming Li1,
1.
 National Yang Ming Chiao Tung
Univ. (Taiwan)

Wednesday, September 4
Room A(407, 4th Floor)

Room B(408, 4th Floor)

01: Advanced CMOS: Material
Science / Process Engineering /Device Technology
A-7:Advanced CMOS: CFET

02: Advanced and Emerging
Memories / New Applications
B-7:ReRAM, PCRAM, andFeRAM

14:15 B-7-04
14:15 A-7-03
Evaluation of Low-Voltage
Monolithic 3D Hetero2T-nC FeRAM considering
Integrated Circuits with 2D
Write Disturb
Electronics○
1
1○
Jhe-Ting Hong , Ta Fan ,Yi-Chuan Chen1, Po-Yi Lee1,
1
1
Cheng-Yang Syu , Li-Syuan Hao , Kuo-Yu Hsiang1,2, Ming-Hung
Yu-Chen Liu1, Nei-Chih Lin2,
Lee2, Pin Su1, 1. National Yang
Chih-Chao Yang2, Chao-Hui
Ming Chiao Tung Univ. (Taiwan),2.
Yeh1,3, 1.The Inst. of Electronics
National Taiwan Univ. (Taiwan)
Engineering, National Tsing Hua
2.
Univ. (Taiwan), Taiwan
Semiconductor Res. Inst.
(Taiwan), 3.Department ofElectrical Engineering, National
Tsing Hua Univ. (Taiwan)
14:30 B-7-05
14:30 A-7-04
Recovery Strategies andMonolithic Stacked Ge
Related Mechanisms to
Nanowires of Single-Gate
Overcome Fatigue-Limited
CFET
Endurance on HZO-based
Yi-Wen Lin1, Bo-An Chen1,
FeCAP and FeRAM Arrays
Kai-Wei Huang1, ○Yung-Chun
Wu1, Fu-Ju Hou2, 1. National Tsing ○Julie Laguerre1,2, Simon Martin1,
Hua Univ. (Taiwan), 2.Taiwan
Liam Hosier1, Jean Coignus1,
Semiconductor Research Inst.
Catherine Carabasse1, Marc
(Taiwan)Bocquet2, François Andrieu1,
Laurent Grenouillet1, 1. CEA-Leti(France), 2.Aix-Marseille Univ.
(France)

Room C(409, 4th Floor)

Room D(Medium Hall, 2nd Floor)

Room E(401, 4th Floor)

04: Power / High‐speed Devices
and Materials
D-7:GaN Power Devices

05: Photonics: Devices /Integration / Related Technology
E-7:Metamaterials andMetasurfaces

14:15 D-7-03
Effect of Substrate Carrier
Concentration on Conductivity
Modulation in GaN○
Shigeyoshi Usami1, Hiroshi
Ohta2, Hirotaka Watanabe3,
Junichi Takino4, Masayuki
Imanishi1, Tomoaki Sumi4, Shugo
Nitta3, Yoshio Okayama4, Yoshio
Honda3, Tomoyoshi Mishima2,
Hiroshi Amano3, Yusuke Mori1,
1.
 Osaka Univ. (Japan), 2.Hosei
Univ. (Japan), 3.IMaSS, Nagoya
Univ. (Japan), 4.PanasonicHoldings Corp. (Japan)

14:15 E-7-03
A Solid-State Depth Perception
System Enabled by
Metasurface and Photonic
Crystal Surface Emitting Laser
Integration○
Yu-Heng Hong1, Wen-Cheng
Hsu1,2, Wei-Ta Huang1,2,
Kuo-Bing Hong1, Chia-Hsun
Chang1,2, Wen-Chien Miao1,2,
Fu-He Hsiao1,2, Chun-Liang Lin2,
Yao-Wei Huang2, Hao-Chung
Kuo1,2, 1. Hon Hai Precision
Indus. Corp., Ltd. (Foxconn)(Taiwan), 2.National Yang Ming
Chiao Tung Univ. (Taiwan)

Room F(402, 4th Floor)Wednesday, September 4
Room G(403, 4th Floor)
07: Organic / Molecular/ Bio‐electronics
G-7:Organic Electronics I

14:30 G-7-03
Liquid Crystalline Organic
Semiconductor Materials
Suitable for High-Speed
Blade-Coating○
Issei Suzuki1, Jun-ichi Hanna1,
Hiroaki Iino1, 1. Tokyo Tech.
(Japan)Room H
Room J(Small Hall, 2nd Floor) (Main Studio, 1st Floor)

Room K(404, 4th Floor)

Room M
Room N(Special Conference Room, 4th Floor) (Studio 1, 1st Floor)
12: Advanced Circuits / Systems
Interacting with Innovative
Devices and Materials
N-7:Advanced Circuits andDevices

08: Low Dimensional Devices
and Materials
H-7:Device-IV

10: Thin Film Electronics: Oxide/ Non‐single Crystalline / Novel
Process
K-7:Ferroelectric Materials
and Late News

11: Advanced Materials:
Synthesis / Crystal Growth /Characterization
M-7:Group IV Materials

14:15 H-7-04 (Late News)
Nearly Ideal Subthreshold
Swing in Carbon Nanotube
Top-Gate p-FETs with EOT =0.9 nm○
Man-Ling Sun1, Hsin-Yuan
Chiu1, Chen-Han Chou1,
Guan-Zhen Wu1, Han-Yi Huang1,
Kuan-Hsiang Chiu1, Chao-Hsin
Chien1, 1. National Yang Ming
Chiao Tung University (Taiwan)

14:15 K-7-04 (Late News)
Heterogeneous and monolithic
complementary TFT consistingof an underlying n-ch top-gatepoly-Si TFT and a upper p-chdouble-gate poly-Ge TFT on a
glass substrate○
Yuto Ito1, Daiki Goshima1, Akito
Kurihara1, Akito Hara1, 1. Tohoku
Gakuin University (Japan)

14:15 N-7-04
14:15 M-7-03
Reconfigurable Optoelectronic
Fabrication and
Logic Gates Based on
Characterization of SiComplementary FDSOI-Based
Quantum-Dots with Ge-Core
Phototransistor
Embedded in Microdisk○
1○
Koki Hosoi , Katsunori
Haotong Zhu1,2, Guihai Yu1,2,
1,22
Makihara , Yuji Yamamoto , Wen Zheng Zhou1,2, Xiaoxin Xie1,2,
Wei-chen2, Bernd Tillack2,3,
Haozhang Yang1,2, Peng Huang1,2,
Seiichi Miyazaki1, 1. Nagoya Univ. Xiaoyan Liu1,2, Jinfeng Kang1,2,
1.
(Japan), 2.Innovations for High
 Peking Univ. (China), 2.Beijing
Performance Microelectronics
Advanced Innovation Center for(Germany), 3.Technical Univ. of Integrated Circuits (China)
Berlin (Germany)

14:30 K-7-05 (Late News)
Effect of Channel Shape on theElectrical Performance ofn-channel TFT on Solid-Phase
Crystallized Polycrystalline Ge○
Linyu Huang1, Atsuki
Morimoto1, Kota Igura2,
Takamitsu Ishiyama2, Kaoru
Toko2, Dong Wang1, Keisuke
Yamamoto1, 1. Kyushu Univ.
(Japan), 2.Univ. of Tsukuba(Japan)

14:30 M-7-04
Influence of Strain and Initial
Surface on Heteroepitaxial
SiGe Growth by CVD○
Yuji Yamamoto1, Wei-Chen Wen1,
Cedric Corley-Wiciak2,
Agnieszka Anna Corley-Wiciak1,3,
Ioan Costina1, Florian Bärwolf1,
Fursenko Oksana1, Junichi
Murota4, Bernd Tillack1,5, 1. IHP- Leibniz-Inst. für innovative
Mikroelektronik (Germany),
2.
ESRF – European Synchrotron
Radiation Facility (France),
3.
RWTH Aachen Univ.
(Germany), 4.Micro System
Integration Center, Tohoku Univ.
(Japan), 5.Tech. Univ. Berlin(Germany)

14:45 K-7-06 (Late News)
Optimization of deposition
conditions and Improvement ofH2 gas sensor characteristics ofporous a-IGZO by applying
machine learning○
Atsushi Shimizu1, Keisuke Ide1,
Takayoshi Katase1, Hidenori
Hiramatsu1, Hideo Hosono1,
Toshio Kamiya1, 1. Tokyo Inst. of
Tech. (Japan)

Wednesday, September 4
Room A(407, 4th Floor)

Room B(408, 4th Floor)

Room D(Medium Hall, 2nd Floor)

Room E(401, 4th Floor)

02: Advanced and Emerging
Memories / New Applications
B-8:Ferroelectric FET

04: Power / High‐speed Devices
and Materials
D-8:Processes andCharacterization

05: Photonics: Devices /Integration / Related Technology
E-8:Sensors and Detectors(15:15-16:30)
Session Chair:
E Ray Hsieh(National Central Univ.),
Laurent Grenouillet (CEA-Leti)(15:15-16:15)
Session Chair:
Taro Nishiguchi(Sumitomo Electric Industries, Ltd.),
Joel Asubar (Fukui Univ.)(15:15-16:15)
Session Chair:
Atsushi Ono (Shizuoka Univ.),
Kouichi Akahane (NICT)

15:15 B-8-01
A Novel Measurement Method
to Extract Relationship
Between Threshold Voltage andPolarization for Understanding
FeFET Memory Operation○
Seong-Kun Cho1, Kasidit
Toprasertpong1, Mitsuru
Takenaka1, Shinichi Takagi1, 1.The
Univ. of Tokyo (Japan)

15:15 D-8-01
15:15 E-8-01
Low-damage gate-recess wet
Identification of theetching for AlGaN/GaN
Wavelength and Size ofheterostructure via removal of Fluorescent Beads
altered layer obtained byusing a Filter-Free Wavelength
Ti-AlGaN reaction
Sensor○1
1○
Jieensi Gelan , Yuchen Deng ,Masayuki Shinomiya1,1
1,2
Junewoo Choi , Kazuya Uryu , Yong-Joon Choi1, Tomoya Ide1,
Toshi-kazu Suzuki1, 1. Japan
Yasuyuki Kimura1, Kazuhiro
Advanced Institute of Science and Takahashi1, Toshihiko noda1,
Technology (Japan), 2.Advantest Kazuaki Sawada1, 1. Toyohashi
Laboratories Ltd. (Japan)
Univ. of Tech. (Japan)

15:30 B-8-02
Investigation of Endurance
Characteristics of AFeFET:
Electrical and Thermal Fatigue
Phenomenon○
Min Liao1, Xianzhou Shao1, Hao
Xu1, Junshuai Chai1, Xiaoqing
Sun1, Xiaoyu Ke1, Jinjuan Xiang2,
Xiaolei Wang1, Wenwu Wang1,
1.Inst. of Microelectronics
Chinese Academy of Sciences(China), 2.Beijing Superstring
Academy of Memory Tech.
(China)15:30 D-8-02
Measurement of TemperatureDependent Interfacial Thermal
Resistance at polymer/SiC
Interface Based on OpticalInterference Contactless
Thermometry○
Jiawen Yu1, Hiroaki Hanafusa1,
Seiichiro Higashi1, 1. Hiroshima
Univ. (Japan)

15:30 E-8-02
Structural Design of HighTemperature Operable
Ge-on-Si Single-Photon
Avalanche Photodiode at
Wavelengths 1310 nm○
Chi-En Chen1, Jau-Yang Wu2,
Chao-Hsin Wu1, 1. National
Taiwan Univ. (Taiwan), 2.Yuan Ze
Univ. (Taiwan)

15:45 B-8-03
Ge n-Channel Hybrid Memory
Based on Ferroelectric Charge
Trapping Layer with Low
Operating Voltage, Large
Memory Window and
Negligible Read Latency○
Ming-Chieh Chiang1, Yi-Fan
Chen1, Kai-Yang Huang1,
Chun-Yi Kuo1, Yung-Hsien Wu1,
1.National Tsing Hua Univ.
(Taiwan)

15:45 D-8-03
Comparison of Single
Shockley-Type Stacking Fault
Expansion Rates in 4H-SiC
under Ultraviolet Illumination
after Hydrogen or Fluorine Ion
Implantation○
Johji Nishio1, Chiharu Ota1,
Ryosuke Iijima1, 1. Toshiba Corp.
(Japan)

15:45 E-8-03
Junction field effect transistor
based on multilayer graphene/
Si heterojunction for nearinfrared light photodetection
yang Xu1, ○Qianqian Zhang1,
Zongwen Li1, Yunfei Xie1,
Shaoxiong Wu1, Zhi-Xiang
Zhang1, Xiaoxue Cao1, Tianjiao
Zhang1, Jian Chai1, Muhammad
Abid Anwar1, Muhammad Malik1,
Chao Gao1, Bin Yu1, Yuda Zhao1,1.
 Zhejiang Univ. (China)

16:00 B-8-04
Integration of Phase Change(Ge2Sb2Te5) Liner Stressor on
Ferroelectric Capacitors and
FeFETs: Simulation andElectrical Characterization○
Yaxuan Yuan1, Xueyang Li1,
Xinze Li1, Bing Chen2, Dawei
Gao3, Genquan Han2, Ran
Cheng1, 1. The Univ. of Zhejiang(China), 2.The Univ. of Xidian(China), 3.The Corp. of Zhejiang
ICsprout Semiconductor (China)

16:00 E-8-04 (Late News)
16:00 D-8-04
Machine Learning-Based
Dynamics of Hopping ofSurface Trapped Electrons on Filter-Free Wavelength
Detection System
GaN High Electron Mobility○
Transistors Observed by
Ikhyun Kwon1, Yong-Joon Choi1,
Operando X-ray Photoelectron Tomoya Ide1, Kazuhiro
Nanospectroscopy
Takahashi1, Toshihiko Noda1,
Keiichi Omika1, Yasunori
Kazuaki Sawada1, 1.Toyohashi
Tateno2, Tsuyoshi Kouchi2, Naoka Univ. of Tech. (Japan)
Nagamura3, Koji Horiba4,
Masaharu Oshima5, Maki
Suemitsu1, ○Hirokazu Fukidome1,1.Research Institute of ElectricalCommunication, Tohoku
University (Japan), 2.Sumitomo
Electric Industries, Ltd. (Japan),3.
National Institute for Materials
Science (Japan), 4.Photon
Factory, High Energy
Accelerator Research
Organization (Japan), 5.Institutefor Solid State Physics, The
University of Tokyo (Japan)

16:15 B-8-05 (Late News)
Implementation of Ge
N-channel FeFET Memory
with Al2O3/AlN Interfacial
Layer by Microwave Annealing○
Yu-Hsing Chen1, Sheng-Yen
Zheng1, Yung-Hsien Wu1,
1.
 National Tsing Hua University(Taiwan)

Room C(409, 4th Floor)

Room F(402, 4th Floor)Wednesday, September 4
Room G(403, 4th Floor)
07: Organic / Molecular/ Bio‐electronics
G-8:Organic Electronics II(15:15-16:30)
Session Chair:Toshinori Matsushima(Kyushu Univ.),
Seiya Yokokura (Hokkaido Univ.)
15:15 G-8-01 (Invited)
Highly deformablesemiconductor devices using
stretchable conjugated polymer
materials○
Naoji Matsuhisa1, 1. The Univ. ofTokyo (Japan)

15:45 G-8-02 (Invited)
Emissions from persistentcharge carriers in organic
semiconductors○
Ryota Kabe1, 1. OIST (Japan)

16:15 G-8-03
Control of dopant distribution
in organic semiconductor thinfilms using fluidity of liquid
crystallinity○
Hiroki Nakano1, ShunTakamaru1, Jun-ichi Hanna1,
Hiroaki Iino1, 1. Tokyo tech.
(Japan)Room H
Room J(Small Hall, 2nd Floor) (Main Studio, 1st Floor)

Room K(404, 4th Floor)

Room M
Room N(Special Conference Room, 4th Floor) (Studio 1, 1st Floor)