15沼津工業高等専門学校研究報告
第 51 号，2017 年 1 月àė»ÿťrƞ?QȨĵǍ¦]¼ǜXƗĵǧÁȑż Ķ
The fabrication and characterization of the high-performance heaterusing the semiconductor substrate
Satoru Noge
Abstract, The purpose of study is realization of the device for a heater with an about 600 7
high-temperature and high-speed temperature follow-up in a small size by utilizing theresistivity change in temperature of the silicon. The heater, which satisfied a necessary
condition for the introduction in the thin film device, was manufactured, thereafter; thetemperature properties were measured under a vacuum. When the power consumption was96W, heater temperature was 552 7. The measurement results suggest that the heater holdthe high-temperature state at low power in vacuum .
Key Words:

High-temperature, Heater, Silicon, Vacuum

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