Krecic Stefano
Sincrotrone Trieste, Italy
Acknowledgments:
E.Karantzoulis, I. Cudin, G.Loda, R. Geometrante, W.VouchStatistic
Downtime due to water system
84:00

72:00

60:00

48:00

hh:mm
36:00

Downtime

24:00

12:00

0:00
1998

1999

2000

2001

2002

2003

2004

2005

2006

2007

2008

2009

year
WAO10 - April 12-16, 2010, Daejeon, Korea

Light exit chamber The main-central part isrealized in AL 5082(Peraluman) The rhomboid exit
chamber is realized in AL
6060 (Anticorodal)
 The water tube is realizedin AL 5082.

WAO10 - April 12-16, 2010, Daejeon, Korea

Causes: Crevice corrosion is a localized form of corrosion due

to stagnant microenvironments in crevices – 100um
gap long the welds

WAO10 - April 12-16, 2010, Daejeon, Korea

 Pitting corrosion is a localized form of corrosion bywhich cavities or "holes" are produced in the material.
It’s due to different oxygen density.
 Erosion corrosion is an acceleration in the rate ofcorrosion attack in metal due to the relative motion ofa corrosive fluid and a metalsurface) - 10m/s->2m/s.
 Stress corrosion cracking is
the cracking induced from the
combined influence of tensilestress (directly applied orresidual stress) and a corrosive
environment.
WAO10 - April 12-16, 2010, Daejeon, Korea

Dematerialized water
Iron
Chromium
NickelCopperAluminum
Chlorides
pH
K20
Spec. Cond. 20° C

Closed circuit water

Normal water

31 μg/l< 1 μg/l
23μg/l< 10 μg/l< 0.005 mg/l
< 0.02 mg/l
17.9 mg/l
7.50 U. pH
379 μS/cm

Law < 20 μg/l
D.Leg. 02/02/2001 n.31

11 mg/l7.70 U. pH
340 μS/cm

 Some filters will be installed in the water coolingsystem, considering the too high values of Iron, Nicheland electrical conductivity.
WAO10 - April 12-16, 2010, Daejeon, Korea

New light exit chamber project Removable water cooling pipe Prevent some corrosion effect highlighted from themicroscope An aluminum foil will be interposed between thevacuum chamber and the water cooling system toimprove the contact resistance

WAO10 - April 12-16, 2010, Daejeon, Korea

New BPM heatsink
 330mA at 2GeV
 140mA at 2.4GeV

WAO10 - April 12-16, 2010, Daejeon, Korea

°C
50

19/09/2009 08.19
19/09/2009 08.55
19/09/2009 09.31
19/09/2009 10.07
19/09/2009 10.43
19/09/2009 11.19
19/09/2009 11.55
19/09/2009 12.31
19/09/2009 13.07
19/09/2009 13.43
19/09/2009 14.19
19/09/2009 14.55
19/09/2009 15.31
19/09/2009 16.07
19/09/2009 16.43
19/09/2009 17.19
19/09/2009 17.55
19/09/2009 18.31
19/09/2009 19.07
19/09/2009 19.43
19/09/2009 20.19
19/09/2009 20.55
19/09/2009 21.31
19/09/2009 22.07
19/09/2009 22.43
19/09/2009 23.19
19/09/2009 23.55
20/09/2009 00.31
20/09/2009 01.07
20/09/2009 01.43
20/09/2009 02.19
20/09/2009 02.55
20/09/2009 03.31
20/09/2009 04.07
20/09/2009 04.43
20/09/2009 05.19
20/09/2009 05.55
20/09/2009 06.31
20/09/2009 07.07
20/09/2009 07.43
20/09/2009 08.19• Without heatsink – 330mA @ 2GeV
100

90

80

7060

80°C BPM_S3.7

40
BPMS37

BPMS47

30
BPMS67

20
BPMS57

100

WAO10 - April 12-16, 2010, Daejeon, Korea

07/03/2010 22.45
07/03/2010 23.27
08/03/2010 00.09
08/03/2010 00.51
08/03/2010 01.33
08/03/2010 02.15
08/03/2010 02.57
08/03/2010 03.39
08/03/2010 04.21
08/03/2010 05.03
08/03/2010 05.4508/03/2010 06.27
08/03/2010 07.09
08/03/2010 07.51
08/03/2010 08.33
08/03/2010 09.15
08/03/2010 09.57
08/03/2010 10.39
08/03/2010 11.21
08/03/2010 12.03
08/03/2010 12.45
08/03/2010 13.27
08/03/2010 14.09
08/03/2010 14.51
08/03/2010 15.33
08/03/2010 16.15
08/03/2010 16.57
08/03/2010 17.39
08/03/2010 18.21
08/03/2010 19.03
08/03/2010 19.45
08/03/2010 20.27
08/03/2010 21.09
08/03/2010 21.51
08/03/2010 22.33
08/03/2010 23.15
08/03/2010 23.57
09/03/2010 00.39
09/03/2010 01.21
09/03/2010 02.03
09/03/2010 02.45•With heatsink – 330mA @ 2GeV80706050°C 4060°C BPM_S3.7
BPMS97

30
BPMS37

BPMS47

20BPMS67

topup mode
BPMS57

100

WAO10 - April 12-16, 2010, Daejeon, Korea• 330mA @ 2GeV
10090807060
50
Without Heatsink
40

With Heatsink

30
20
100
120
39
58
77
96
115
134
153
172
191
210
229
248
267
286
305
324
343
362
381
400
419
438
457
476
495
514
533
552
571
590
609
628
647
666
685
704
723°C

minutes

WAO10 - April 12-16, 2010, Daejeon, Korea 140mA @ 2.4GeV 10°C-20°C difference degrees
10090807060Without Heatsink°C 50

With Heatsink

4030
20
10132
63
94
125
156
187
218
249
280
311
342
373
404
435
466
497
528
559
590
621
652
683
714
745
776
807
838
869
900
931
962
993
1024
1055
1086
1117
1148
1179
1210
1241
1272
1303

0

minutes

WAO10 - April 12-16, 2010, Daejeon, Korea 160mA instead 140mA @ 2.4GeV only 3-4% oftemperature increasing

WAO10 - April 12-16, 2010, Daejeon, Korea