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DATA SHEETdbook, halfpage

M3D302

BZA408B
Quadruple bidirectional ESD
transient voltage suppressor
Product data sheet
Supersedes data of 1998 Jun 05

1998 Oct 15

NXP Semiconductors

Product data sheet

Quadruple bidirectional ESD transient
voltage suppressor
FEATURES

BZA408B

PINNING• ESD rating >15 kV, according to IEC1000-4-2

PIN

DESCRIPTION• SOT457 surface mount package

1cathode 1• Non-clamping range: −5 V to +5 V2, 5ground• Channel separation: >70 dB

3cathode 2• Low reverse current: <100 nA

4cathode 3• Low diode capacitance: <75 pF.

6cathode 4

APPLICATIONS• Protection of equipment, connected to data andtransmission lines, against voltage surges caused byelectrostatic discharge e.g:handbook, halfpage

654– Medical equipment

123– Portable electronics.

Top view

65

124– Computers and peripherals– Audio and video equipment– Communication systems
3MAM409

Marking code: Z8.

DESCRIPTION
4-bit wide monolithic bidirectional ESD transient voltage
suppressor in a six lead SOT457 (SC-74) package.

Fig.1 Simplified outline (SOT457) and symbol.

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOLPARAMETERCONDITIONS

MIN.

MAX.

UNIT

Per diode (pin 2 and / or 5 connected to ground)
IZSM

non-repetitive peak reverse current

tp = 1 ms; square pulse; see Fig.2−2A

PZSM

non-repetitive peak power

tp = 1 ms; square pulse−20W

Tstg

storage temperature−65+150°C

Tj

junction temperature−65+150°C

1998 Oct 152NXP Semiconductors

Product data sheet

Quadruple bidirectional ESD transient
voltage suppressor

BZA408B

THERMAL CHARACTERISTICSSYMBOLRth j-s

PARAMETERCONDITIONS

VALUE

UNIT

thermal resistance from junction to soldering point

one or more diodes loaded

340

K/W

MAX.

UNIT

ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOLPARAMETERCONDITIONSMIN.

Per diode (pin 2 and / or 5 connected to ground)
VRWM

working reverse voltage

−5V

VR

reverse voltage

Itest = 5 mA

5.5−

V

VZSM

non-repetitive peak reverse voltage

tp = 1 ms; IZSM = 2 A−

10V

IR

reverse current

VR = VRWM−100nACd

diode capacitancesee Fig.3
VR = 0; f = 1 MHz−75pF

VR = 5 V; f = 1 MHz−55pF

70

−

dB

αch (p to p)

pin to pin channel separationnote 1; see Fig.4

Note
1. αch (p to p) is measured as follows: a −7 dBs sinewave of 400 Hz is connected to e.g. pin 6 and a −7 dBs sinewave of
1 kHz to pin 1. The 1 kHz signal of pin 1 is measured on pin 6 by means of a spectrum analyser with an input
impedance of 1 MΩ. So αch (p to p) equals the 1 kHz level on pin 1 minus the 1 kHz level on pin 6. For the 400 Hz
signal the same measurement is done in the opposite way.

1998 Oct 153

NXP Semiconductors

Product data sheet

Quadruple bidirectional ESD transient
voltage suppressor

BZA408B

GRAPHICAL DATA

MGR557

10MGR558

80

handbook, halfpage

handbook, halfpage

Cd(pF)IZSM(A)

60

1

40

10−1
10−2

10−1

20
1tp (ms)

10012

34VR (V)

5Tj = 25 °C; f = 1 MHz.

Fig.2

Maximum non-repetitive peak reverse
current as a function of pulse time.

Fig.3

Diode capacitance as a function of reverse
voltage; typical values.

handbook, full pagewidth

coaxial cable withSMB connector

SPECTRUM
ANALYZER

1 MΩ

SIGNALGENERATORSIGNALGENERATOR

DUT600 Ω16600 Ωf = 1 kHz−7 dBs25

f = 400 Hz−7 dBs34
MGR556

Fig.4 Channel separation measurement setup.

1998 Oct 154

NXP Semiconductors

Product data sheet

Quadruple bidirectional ESD transient
voltage suppressor

handbook, full pagewidthESD TESTER

450 Ω

RZ

BZA408B

RG 223/U50 Ω coax

DIGITIZINGOSCILLOSCOPE

10×ATTENUATOR
note 1CZ50 ΩNote 1: attenuator is only used for open
socket high voltage measurements

IEC1000-4-2 network
CZ = 150 pF; RZ = 330 Ω

1/4 BZA408B

vertical scale = 100 V/Div
horizontal scale = 50 ns/Div

vertical scale = 10 V/Div
horizontal scale = 50 ns/Div

GND
GND
unclamped +1 kV ESD voltage waveform(IEC1000-4-2 network)

clamped +1 kV ESD voltage waveform(IEC1000-4-2 network)

GND
GND

vertical scale = 10 V/Div
horizontal scale = 50 ns/Div

vertical scale = 100 V/Div
horizontal scale = 50 ns/Div
unclamped −1 kV ESD voltage waveform(IEC1000-4-2 network)

clamped −1 kV ESD voltage waveform(IEC1000-4-2 network)

Fig.5 ESD clamping test set-up and waveforms.

1998 Oct 155MGR560

NXP Semiconductors

Product data sheet

Quadruple bidirectional ESD transient
voltage suppressor

BZA408B

APPLICATION INFORMATION
Typical bidirectional application
A quadruple bidirectional transient suppressor in a SOT457 package makes it possible to protect four separate lines
using only one package. One simplified example is shown in Fig.6.

handbook, full pagewidth

audio in L
audio in R
audio out L
audio out R

TVSET/VCR

SCART
CONNECTOR

BZA408B
GND
MGR559Fig.6 Scart connector protection.

Device placement and printed-circuit board layout
Circuit board layout is of extreme importance in the suppression of transients. The clamping voltage of the BZA408B isdetermined by the peak transient current and the rate of rise of that current (di/dt). Since parasitic inductances can further
add to the clamping voltage (V = L di/dt) the series conductor lengths on the printed-circuit board should be kept to aminimum. This includes the lead length of the suppression element.
In addition to minimizing conductor length the following printed-circuit board layout guidelines are recommended:
1. Place the suppression element close to the input terminals or connectors.
2. Keep parallel signal paths to a minimum.
3. Avoid running protection conductors in parallel with unprotected conductors.
4. Minimize all printed-circuit board loop areas including power and ground loops.
5. Minimize the length of the transient return path to ground.
6. Avoid using shared transient return paths to a common ground point.

1998 Oct 156

NXP Semiconductors

Product data sheet

Quadruple bidirectional ESD transient
voltage suppressor

BZA408B

PACKAGE OUTLINE
Plastic surface mounted package; 6 leads

SOT457DEB

yAHE

6Xv M A

45Q

pin 1index

AA1c

1

23
Lp
bpew M B
detail X

012 mmscale

DIMENSIONS (mm are the original dimensions)
UNITAA1

bpcDEeHE

LpQv

w

ymm

1.1
0.9

0.1
0.013

0.40
0.25

0.26
0.10

3.1
2.7

1.7
1.30.95

3.0
2.5

0.6
0.2

0.33
0.23

0.2

0.2

0.1

OUTLINE
VERSION
SOT457

1998 Oct 15

REFERENCES
IEC

JEDEC

EIAJ
SC-74

7

EUROPEAN
PROJECTION

ISSUE DATE
97-02-28
01-05-04

NXP Semiconductors

Product data sheet

Quadruple bidirectional ESD transient
voltage suppressor

BZA408B

DATA SHEET STATUS
DOCUMENTSTATUS(1)PRODUCTSTATUS(2)Objective data sheet

Development

This document contains data from the objective specification for productdevelopment.

Preliminary data sheet

Qualification

This document contains data from the preliminary specification.

Product data sheet

Production

This document contains the product specification.

DEFINITION

Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was publishedand may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS

above those given in the Characteristics sections of thisdocument is not implied. Exposure to limiting values forextended periods may affect device reliability.

General ⎯ Information in this document is believed to beaccurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completenessof such information and shall have no liability for theconsequences of use of such information.

Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms andconditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including thosepertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between informationin this document and such terms and conditions, the latter
will prevail.

Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time andwithout notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell productsthat is open for acceptance or the grant, conveyance orimplication of any license under any copyrights, patents orother industrial or intellectual property rights.

Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable foruse in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunctionof an NXP Semiconductors product can reasonably beexpected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment orapplications and therefore such inclusion and/or use is at
the customer’s own risk.

Export control ⎯ This document as well as the item(s)described herein may be subject to export control
regulations. Export might require a prior authorization fromnational authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values andCharacteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for thespecified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage tothe device. Limiting values are stress ratings only andoperation of the device at these or any other conditions
1998 Oct 158NXP SemiconductorsCustomer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.

Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any licenseunder patent- or other industrial or intellectual property rights.
Printed in The Netherlands

115104/00/02/pp9

Date of release: 1998 Oct 15

Document order number: 9397 750 04313