OPTICAL DEVICESMitsubishi Electric Optical Devices:
The Key to Connecting Information Networks in the Future.
LASER DIODES FOR PROJECTORS

Please visit our website for further details

0.9638nm High-output Laser Diode for Projectors

520

0.8Laser Display

540

0.7
560

0.6

Compared to LEDs, semiconductor lasers have lower power consumption, higher output
and can be used with optical systems having a higher maximum aperture. These
considerable advantages mean that they can be used for projectors that do not require
focal adjustment. Mitsubishi Electric has a range of lasers available, including a
multi-mode semiconductor laser with a wavelength below 640nm and 3.8W output(when pulse-driven), 2.1W output (when CW-driven) that provides highly visible, vibrant
red colors for color projectors.

sRGB

500

y

580

0.5
0.4

600

490

CMY

0.2
0.1

620
700

D650.3480

0.00.0

470
460

0.1

380

0.2

0.3

0.4
x

0.5

0.6

0.7

0.8

■ Selection map of Red Laser Diodes
ML562G86
ML562G85
ML562G84
ML562G75

RED [~640nm](Display System etc.)

Pu lseFlat glass cap

ML562G86[638nm, 3.8W(Pulse)]

ML562G84[638nm, 2.5W(Pulse)]

ML501P73[638nm, 1W(Pulse)]

HighLuminance

CW

ML501P73

ML562G85

Cap less[639nm, 2.1W(CW)]

ML562G75[636nm, 1.55W(CW)]

50

100

150

200

250

300

350

400450500

Luminous Flux [lm]■ Line-up of Laser Diodes [Multi Transverse mode LD]

1Type Number

Application

Wavelength[nm]

Output Power
@CW
[mW]

Output Power@Pulse[mW]

Case
Temperature[°C]

Package

ML562G86

Display

638–380045

ф9.0mm TO Flat glass cap

ML562G84

Display638–

250045

ф9.0mm TO Flat glass cap

ML501P73

Display638

500

100040ф5.6mm TO CaplessML562G85

Display639

2100–45

ф9.0mm TO Flat glass cap

ML562G75

Display636

1550–35

ф9.0mm TO Flat glass cap

OPTICAL DEVICES FOR OPTICAL COMMUNICATION SYSTEMS

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Optical Devices for Fiber-to-the-Home (FTTH)ONU

As streaming music and video becomes a common service, there is growing interest in
Fiber-to-the-Home (FTTH), an optical communication system that provides high-speed,
stable bandwidths to each household. Since approximately 2010, Mitsubishi Electric has
contributed to FTTH by providing optical devices such as FP-LD, DFB-LD, EML and APD.
Currently, 10G-EPON and XG-PON, which are faster communication systems, are being
installed. For the future, the standardization of HS-PON as a next-generation FTTH
system is also being discussed. Mitsubishi Electric maintains its lead in FTTH applications
through its corresponding product lineup and new product development.

Upstream

OLT

ONU

Downstream
ONU

1.5µm band
DFB-LD or EML

Optical Devices for Data Centers

1.3µm band
FP-LD or DFB-LD, APD

PowerErrorInfoFixedSwitchSystem

Data centers have been expanding as a platform for storing and distributing digitalcontents such as SNS, photos, and videos on the ever-increasing Internet.
In recent years, with the shift from on-premise-type to cloud-type storage, and theexpansion of various cloud computing services, data centers are expected to grow as aplatform that provides the foundation and infrastructure for cloud computing services.
For the data center market, which requires advanced technologies, Mitsubishi Electric
provides high-speed, low-power optical devices that contribute as the result of theunique characteristics of compound semiconductors.

1.3um band
DFB-LD or EML

Optical Devices for 5G Mobile Base Stations
Fifth-generation (5G) mobile communication system will offer ultrahigh-speed
communication, low latency, and ultra-multiple connections. Accordingly, 5G mobile
communication system is expected to become used widely around the world. With theincrease in communication traffic, optical devices that support mobile base station
networks are also required to operate at higher speeds, over a wider temperature range,and have higher reliability. Mitsubishi Electric utilizes the industry-standard TO56
package to expand the connectivity of various products such as 25Gbps DFB and EML. We
are also developing 100Gbps EML CAN for the future as well as services that will support
the application and market growth of 5G mobile base stations, and is ready to support
the market growth of 5G mobile base station applications in the future.

25Gbps DFB-LD

25Gbps EML■ Terminology
APD
BiDi
CFP
CPRI
CW
CWDM
Df
DFB-LD
EML
FP-LD
FTTH

Avalanche Photo Diode
BiDirectional
Centum gigabit Form-factor Pluggable
Common Public Radio Interface
Continuous Wave
Coarse Wavelength Division MultiplexingFocal DistanceDistributed FeedBack Laser Diode
Electro absorption Modulator integrated Laser diode
Fabry-Perot Laser Diode
Fiber To The Home

G-PON
GE-PON
HS-PONITLA
LEDOLT
ONU
OSFP
OTDR
P2P
PAM4Gigabit Passive Optical Network
Gigabit Ethernet Passive Optical Network
High-Speed Passive Optical Network
Integrable Tunable Laser AssemblyLight Emitting Diode
Optical Line Terminal
Optical Network Unit
Octal Small Form-factor Pluggable
Optical Time Domain Reflectometer
Peer to Peer
4-level pulse amplitude modulation

QSFP-DDSDHSFP+SNSSONET
TDM
XFP
10G-EPON
XG-PON

Quad Small Form-factor Pluggable Double Density
Synchronous Digital Hierarchy
Small Form-factor Pluggable Plus
Social Networking Service
Synchronous Optical NETwork
Time Division Multiplexing
10 Gigabit small Form-factor Pluggable
10 Gigabit Ethernet Passive Optical Network
10 Gigabit Passive Optical Network

2OPTICAL DEVICES FOR OPTICAL COMMUNICATION SYSTEMS■ Selection Map of OPTICAL DEVICES [Under 50Gbps]
Bit Rate~1.25Gbps

2.5Gbps

10Gbps

25Gbps

1.3μm

ML772B75★

(50Gbps PAM4 x 2λ)for 50Gbps
40km BiDi

1.55μm

EML50Gbps
ML959B56
ML959A64
ML772B75 ★
Asphericallens capML959B56
for 40km TDM

ML920LA46S
ML920LA43S
ML768LA42T
ML771LA72T
ML771LA74T ★
Asphericallens cap

1.57μm

ML959A64
for XG(S)-PON N2a OLT
Combo-PON C+

ML771AA72T
1.3μm(50Gbps PAM4 x1λ)

for 10GBASE-LR

for 25Gbps
10km TDM

for 50Gbps
10km TDM

ML768LA42T

ML771LA72T

ML768K42T

ML720T39S
for P2P

1.49μm
1.55μmD FB - L D

for CPRI

ML920LA46S

ML920LA43S

for GE-PON OLT

ML771AA74T(25Gbps x 1λ)

ML771LA74T★

(25Gbps x 3λ)(50Gbps PAM4 x 4λ)for 25Gbps
15km TDM

for 50Gbps
15km TDM

ML720T39S
ML768K42T
ML771AA72T
ML771AA74T
Ball lens cap

ML720K45S
ML720K19S

for TDM (1.55µm)
8λ CWDM

1.3μm

ML720Y49S

ML720K45S
for P2P

ML720Y49S

ML720K19S
for P2P

FP- L Dfor GE-PON ONU

ML776H10
ML976H10
For OTDR

ML776H10
1.3μm FP-LD

ML976H10
1.55μm FP-LD★: New product3

■ Selection Map of OPTICAL DEVICES [Over 100Gbps]
Bit Rate
100Gbps

400Gbps

800Gbps

1.6Tbps
ML772B70 ★

1.3μm

Asphericallens cap

ML772B70 ★

(100Gbps PAM4 x 1λ)for 100G LR1-20,
100G ER1-30

ML7CP70Bare die

ML7CP70(100Gbps PAM4 x 4λ)

CWDM

EML

for 100G DR1/LR1,400G DR4/FR4/LR4,2x400G FR4,800G DR8

ML7CP73 ★

(200Gbps PAM4 x 4λ)

LAN-WDMfor 800G DR4/FR4, 2x800G FR4,
1.6T DR8

ML7CP73 ★
Bare die

ML7CP75 ★

(100Gbps PAM4)

ML7CP75 ★

400GHz space LAN-WDM x 4λ,
800GHz space LAN-WDM x 4λfor 100G ER1 BiDi,
400G ER4

Bare die

1.5µm band

Tun ab le -LD

ML9CP61★★
Bare die

ML9CP61★★

nano/micro-ITLA
for over 100G DWDM, 400G ZR/ZR+★: New product ★★: Under development4OPTICAL DEVICES FOR OPTICAL COMMUNICATION SYSTEMS■ Line Up of LD / LD Modules [Under 50Gbps]
Type Number

Chip Type

Package

Wavelength [nm]Case Temp. [°C]

Features

EML

TO56-CAN

1290, 1310

-40~+95

Bidirectional, 50Gbps PAM4, 40km

ML771AA74T

DFB-LD

TO56-CAN

1310-40~+9050Gbps PAM4, 10km, Df=6.6mm★

ML771LA74T

DFB-LD

TO56-CAN

4λ CWDM-40~+90

Bidirectional, 50Gbps PAM4, 15km, Df=7.5mm

ML771AA72T

DFB-LD

TO56-CAN

1310-40~+9025Gbps, SFP28, 10km, Df=6.6mm

ML771LA72T

DFB-LD

TO56-CAN

1270, 1310, 1330

-40~+9025Gbps, SFP28, 15km, Df=7.5mm

ML959B56

EML

TO56-CAN

1550-5~+80

XFP/SFP+, 40km

ML959A64

EML

TO56-CAN

1577-5~+80

XG(S)-PON N2a, OLT, Combo-PON C+

ML768K42T

DFB-LD

TO56-CAN

1310-40~+95

10GBASE-LR, SONET/SDH

ML768LA42T

DFB-LD

TO56-CAN

1270, 1330

-40~+95CPRI

ML720T39S

DFB-LD

TO56-CAN

1310-40~+95

P2P

ML720K19S

FP-LD

TO56-CAN

1310-40~+85

P2P

ML920LA46SDFB-LD

TO56-CAN

1490-40~+85

G-PON OLT

1550-20~+95

P2P

ML920LA43SDFB-LD

TO56-CAN

1470~1610
8λ CWDM-10~+85

8λ CWDM

1.25G/~622M

ML720K45S

FP-LD

TO56-CAN

1310-40~+85P2P

ML720Y49S

FP-LD

TO56-CAN

1310-40~+85

GE-PON ONU, High coupling efficiency

For
OTDR

ML776H10FP-LD

TO56-CAN

1310-40~+85

OTDR

ML976H10FP-LD

TO56-CAN

1550-40~+85

OTDR

ML772B75 ★
50G25G

10G

2.5G★: New product■ Line Up of APD / PD
Type Number
10G

PD8xx35

Chip Type

Package

Wavelength [nm]Case Temp. [°C]

Features

APD

T.B.D.

1270~1577-40~+95

10G-EPON/XG-PON, ONU & 40km

Wavelength [nm]Case Temp. [°C]

Features■ Line Up of LD / LD Modules [Over 100Gbps]
Type Number800G/1.6T

Chip Type

Package

ML7CP73 ★

EML

Bare die

4λ CWDM+50~+60200Gbps PAM4, 800G DR4/FR4,2x800G FR4, 1.6T DR8

ML7CP70

EML

Bare die

4λ CWDM+25~+75100Gbps PAM4, 100G DR1/LR1,400G DR4/FR4/LR4, 2x400G FR4, 800G DR8ML9CP61★★

TunableLD array

Bare die1527.994~1567.133+25~+55

nano/micro-ITLA for over 100G DWDM,400G ZR/ZR+

ML7CP75 ★

EML

Bare die

4λ 400GHz LAN-WDM4λ 800GHz LAN-WDM+50~+60100Gbps PAM4, 100G ER1 BiDi,400G ER4

ML772B70 ★

EML

TO56-CAN

1310-40~+95100Gbps PAM4, LR1-20-5~+80100Gbps PAM4, ER1-30400G100G★: New product ★★: Under development

Type Name Definition of Laser and Photo Diodes

ML 7 68K 42 T

Categories
Device Type●Device Type [ML: Laser Diode PD: Photo Diode]

Wavelength

Wavelength Range (nm)567978500< λ ≤ 700
700< λ ≤1000
1250< λ ≤1400
1400< λML

●Wavelength●Package*● Chip Series

TypeNCCasePDRCaseLDPDPD

Available for Monitor PD
Contained Package●Pin Assignment

FLDPD

ECase

CaseLDPDLDSCasePD

1000< λ ≤1600

LDTCasePD

CaseLDPDLDLD

Anode Common

Cathode Common

Cathode Common

Anode Common

Cathode Common

Floating

Floating

PD

Cathode Common

Cathode Common

Anode Common

Floating

Floating

Floating

Anode Common*Please contact our sales office about the selection packages.

5

MEMO

SAFETY CAUTIONS FOR USE OR DISPOSAL OF LISTED PRODUCTS

The warnings below apply to all products listed in this pamphlet.

WARNING
Laser Beam

While the laser diode is on, its gives a laser beam. Even if we can't see a laser beam by its wavelengt, penetration into the eye by a laser beam or its
reflected light may cause eye injury. Prevent the irradiating part or its reflected light from entering the eyes.

InjuryFiber fragments may cause injury. In cases of fiber bending or breakage, never touch the fragment.

GaAs

Gallium arsenide (GaAs) is used in these products. To avoid danger, strictly observe the following cautions.
• Never place the products in your mouth.
• Never burn or break the products, or use any type of chemical treatment to reduce them to gas or powder.
• When disposing of the products, always follow the laws which apply, as well as your own company's internal waste treatment regulations.

Disposal of Flame-Retarded
Fiber Core Wire

Flame retardant resin must be disposed of according to law of industrial waste in disposal place.
This product is a bromine type flame-retarded resin, containing bromine compounds and antimony trioxide.
All disposal operations should be conducted with full consideration of this content.

6

OPTICAL DEVICES

Mitsubishi Electric Optical Devices Websitewww.MitsubishiElectric.com/semiconductors/opt/

Keep safety first in your circuit designs!
• Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead topersonal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammablematerial or (iii) prevention against any malfunction or mishap.

Notes regarding these materials• These materials are intended as a reference to assist our customers in the selection of the Mitsubishi Electric Semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual
property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
• Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples
contained in these materials.
• All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi
Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Electric Semiconductor productdistributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Electric Semiconductor home page (http://www.MitsubishiElectric.com/semiconductors/).
• When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on
the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein.
• Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric
Corporation or an authorized Mitsubishi Electric Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular,
medical, aerospace, nuclear, or undersea repeater use.
• The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials.
• If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved
destination.
Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
• Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Electric Semiconductor product distributor for further details on these materials or the products contained therein.

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www.MitsubishiElectric.com

New publication effective March, 2024.
Specifications subject to change without notice.
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