【Symposium title】
The 1st International Symposium on Novel Materials for
Next Generation Electronics and Catalysis【Date and time】
February 16 (Thu), 2017, 09:00-17:55(reception: 18:20-19:40)
February 17 (Fri), 2017, 09:00-15:15【Symposium site】
Lecture Hall, 1F of Genso-Cube (S8 building), Suzukakedai campus,Tokyo Tech
【Program】
Please see the following page.
【Reception】
Date and time: February 16 (Thur), 2017, 18:20-19:40
Place: Party space, 3F of H1 & H2 Bldgs., No. 25 of
http://www.titech.ac.jp/english/maps/suzukakedai/index.html
Contribution fee: 4,000 JPY【Contact information】
Please fill out the following Attendance inquiry and e-mail it to ties@lucid.msl.titech.ac.jp※Deadline February 9 (Thu)＜Attendance inquiry＞
・Your name:・Your affiliation:
・Attendence to the symposium(Feb.16): YES/NO
・Attendence to the symposium(Feb.17): YES/NO
・Attendance to the reception: YES/NO

＜Program＞

February 16, Thursday, 09:00-17:55
09:00-09:20

Opening Remarks
Hideo Hosono (Tokyo Tech)

1. Technical Session on computational approaches I
Chaired by Peter V. Sushko (PNNL)
1.1. 09:20-09:55
Electron and hole trapping in amorphous oxides
Alex Shluger (UCL)
1.2. 09:55-10:30
In silico design and exploration of novel semiconductors
Fumiyasu Oba (Tokyo Tech)
Break 10:30-10:45
1.3. 10:45-11:20
Computational materials design for renewable energy applications
David Scanlon (UCL)
1.4. 11:20-11:55
Theoretical aspects of topological materials from ab initio calculations
Motoaki Hirayama (Tokyo Tech)
Lunch 11:55-13:00
2. Technical Session on computational approaches II
Chaired by Fumiyasu Oba (Tokyo Tech)
2.1. 13:00-13:35
Catalytic function activated by localized electrons and hydrogen transfer
Peter V. Sushko (PNNL)
2.2. 13:35-14:10
New strategy on first principles and evolutionary computations for electrides
Tomofumi Tada (Tokyo Tech)
2.3. 14:10-14:45
Atomistic modeling of porous catalysts
Ben Slater (UCL)
2.4. 14:45-15:20
Density-functional approaches to two-dimensional materials
Susumu Saito (Tokyo Tech)Break 15:20-15:35
3. Technical Session on s semiconductors, superconductors, and dielectrics I
Chaired by Hiroshi Funakubo (Tokyo Tech)
3.1. 15:35-16:10
Chemical-vapor deposition of oxide semiconductors
Ivan Parkin (UCL)
3.2. 16:10-16:45
Control of defects to develop new amorphous oxide semiconductors
Toshio Kamiya (Tokyo Tech)
3.3. 16:45-17:20
Sustainable, continuous hydrothermal production of advanced functional
nanomaterials; from lab to pilot plant
Jawwad Darr (UCL)
3.4. 17:20-17:55
Heteroepitaxial growth and electric field-induced phase transition of layerediron-selenides
Hidenori Hiramatsu (Tokyo Tech)
Reception 18:20-19:40
February 17, Friday, 09:00-15:15
4. Technical Session on semiconductors, superconductors, and dielectrics II
Chaired by Ivan Parkin (UCL)
4.1. 09:00-09:35
Understanding the activity of tungsten oxide nanostructures for photon-driven
applications
Chris Blackman (UCL)
4.2. 09:35-10:10
Heteroepitaxy of functional materials for environmental and energy
applications
Akira Ohtomo (Tokyo Tech)
4.3. 10:10-10:45
Precursor Synthesis for CVD of TCOs and Metals
Caroline Knapp (UCL)
Break 10:45-11:00
4.4. 11:00-11:35
Ferroelectric and dielectric materials for power electronics and automobile
applications

Hiroshi Funakubo (TokyoTech)
5. Technical Session on catalytic and related materials
Chaired by Tomofumi Tada (Tokyo Tech)
5.1. 11:35-12:10
Real-time catalyst characterization under reaction conditions
Andrew Beale (UCL)
Lunch 12:10-13:10
5.2. 13:10-13:45
Electride catalysts for ammonia synthesis and chemical reactions
Masaaki Kitano (Tokyo Tech)
5.3. 13:45-14:20
Structure of dopants in Catalysts and transparent conducting oxides
Gopinathan Sankar (UCL)
5.4. 14:20-14:55
High-pressure synthesis of oxyhydrides and related compounds
Satoru Matsuishi (Tokyo Tech)
6. 14:55-15:15 Concluding Remarks
Alex Shluger (UCL)