2024 8th International Workshop on Low Temperature Bonding for 3D Integration
October 30, Wednesday
REGISTRATION

9:0030O-01(OPENING REMARKS)[Keynote] Recent Progress in Surface Activated Bonding for 3D and Heterogenous Integration
Tadatomo Suga, Meisei University

30O-02

Surface Activated Cu/SiO2 hybrid bonding for room temperature 3D integration
Karine Abadie, Univ. Grenoble Alpes, CEA, LETI

10:15

30O-03

Cross-sectional Investigation by Dual Bias Modulation Electrostatic Force Microscopy on n-type Si/SiJunction Fabricated by Surface-activated Bonding
Daichi Kobayashi, Institute of Industrial Science, The University of Tokyo

10:30

30O-04

Application of surface activated bonding to determine the dislocation generation process at asymmetric grainboundaries in silicon
Yutaka Ohno, Institute for Materials Research, Tohoku University

9:30

10:00

Surface
Activatged
Bonding (I)

BREAK

10:45-11:15

11:15

11:40

11:55

Surface
Activatged
Bonding (II)

12:10

30O-05[Invite] Ga2O3-Diamond heterogeneous bonding at room temperature and interfacial thermal stressevaluation
Hongyue Li, Institute of Microelectronics, Chinese Academy of Sciences

30O-06Integrating Polycrystalline Diamond with Si for Enhanced Thermal Management in Large-Scale Integration
Jianbo Liang, Osaka Metropolitan University

30O-07

Preparation of GaN-HEMTs devices bonded to 150μm thick diamond substrate
Yusuke Shirayanagi, Mitsubishi Electric Corporation

30O-08Performance Optimization of Gigawatt-Class DFC-PowerChip Laser System Through Bonding Technology
Arvydas Kausas, RIKEN SPring-8 Center

LUNCH

12:25-13:30

13:30

30O-09[Invite] Bonding for Advanced 3D Logic Devices
Serena Iacovo, IMEC

13:55

30O-10[Invite] Cu/Dielectric Hybrid bonding at Low Thermal Budget.
Hemanth Kumar Cheemalamarri, Institue of Microelectronics, A*STAR - Singapore

30O-11[Invite] Evolution of stacked image-sensor and Cu-Cu hybrid bonding technology
Nobutoshi Fujii, Sony Semiconductor Solutions Corporation

30O-12

Novel IR Laser Release Temporary Bonding Solution for Advanced 3D stacking and Layer Transfer
Peter Urban, EV Group

15:00

30O-13Wafer-to-Wafer Bonding for Advanced Manufacturing Nodes
Thomas Plach, EV Group

15:15

30O-14Is NaOH beneficial to low temperature hybrid bonding integration?
Hadi HIJAZI, University Grenoble Alpes, CEA-Leti

14:20

14:45

Hybrid Bondingand 3DIntegration(I)

15:30-16:00

BREAK

16:00-17:00Short presentation for poster (I)MC:

17:00-18:00

Poster Session (I)GAGAKU WORKSHOP and RECEPTION

October 31, Thursday
9:30

9:55

10:20Hybrid Bonding
and3DIntegration(II)10:35

31O-01[Invite] Die-to-Wafer Bonding for Heterogenous Integration
Viorel Dragoi, EV Group

31O-02[Invite] The Interactions between Formic Acid Vapor and Metallic Surface
Jenn-Ming Song, Department of Materials Science and Engineering, National Chung Hsing University

31O-03

Effect of Microstructures on Thermal Expansion of Cu pads in SiO2 Vias for 3D IC Hybrid Bonding
Pin-Lin Chen, National Yang Ming Chiao Tung University

31O-04All-rounder hybrid bond-cluster for wafer to wafer and Co/Seq die to wafer, room temperature assemblies
Philippe Muller, SUSS MicroTec Solutions GmbH & Co. KG

BREAK

10:50-11:20

11:20

12:00

Power Device
Applications (I)

12:25

31O-05[Keynote]Review of Wafer Bonding for High Power Device Applications
Karl Hobart, US Naval Research Laboratory

31O-06[Invite] Wafer Bonding enabling engineered substrates for large application portfolio
Christophe Maleville, Soitec

31O-07

Reliability of Full-Face Diffusion Bonding with Ag Coated Al Foil under Thermal StressOji Sato, ROHM Co., Ltd.

12:40-13:50

LUNCH

13:50-14:50

Short presentation for poster (II)MC:

14:50-15:50

Poster Session (II)15:50-16:20

BREAK

16:20

16:45

17:10

Power Device
Applications (II)31O-08[Invite] Development of diamond substrate and devices
Hong-Xing Wang, School of Electronic and Information Engineering, Xi'an Jiaotong University

31O-09[Invite] Thermal boundary resistance of bonded semiconductor interfaces
Zhe Cheng, Peking University

31O-10[Keynote]Integration of Diamond with GaN and Gallium Oxide
Martin Kuball, University of Bristol

BANQUET

November 1, Friday
9:30

9:55

10:10MEMS, RF, andNew
Applidations

10:25

01O-01[Invite] The Use of Glasses in Low-Temperature Wafer Bonding Processes
Roy Knechtel, Schmalkalden University of Applied Sciences, Faculty Electrical Engineering

01O-02

Direct bonding using HfO2 as dielectric
Sander Grosemans, IMEC

01O-03Room-temperature Bonding of Lithium Niobate on Single Crystal Diamond Wafer
Jiao Fu, Institute of Wide Band Gap Semiconductors, Xi'an Jiaotong University

01O-04

Molecular direct bonding and transfer of 2D MoS2 layer over a full 200 mm silicon wafer.
Frank FOURNEL, Univ. Grenoble Alpes, CEA, Leti

BREAK10:40-11:10

11:10

01O-05[Invite] Bonding Potential of Atomic Diffusion Bonding of Wafers Using Oxide Films
Takehito Shimatsu, Frontier Research Institute for Interdisciplinary Sciences (FRIS), Tohoku University

11:35

01O-06

Atomic Diffusion Bonding using SiN films
Arina Muraoka, Canon ANELVA Corporation

01O-07

Atomic Diffusion Bonding of Wafers with PDC-SiO2 underlayers using Thin Zr Films
Miyuki Uomoto, Frontier Research Institute for Interdisciplinary Sciences (FRIS), Tohoku University

12:05

01O-08Investigation of Low Temperature Cu/Cu Wafer Bonding for Hybrid Bonding Applications
Junsha Wang, The University of Tokyo

12:20

01O-09Perhydropolysilazane as an Adhesion Layer for Vacuum Sealing Wafer Bonding
Kai Takeuchi, Tohoku University

11:50

New Method forLow
Temperature
Bonding

LUNCH

12:35-13:40

13:40

01O-10[Invite] Wafer-Level InP to Si and LiNbO3 Covalent Bonding via Asymmetric Plasma Activation Strategy
Chenxi Wang, Harbin Institute of Technology

14:05

01O-11

New insights of junction group states modified by surface activation in interlayer dielectrics
Hideki Shimizu, Graduate School of Engineering, Osaka University,

01O-12Correlation between Pre-Bonding Surface and Bond Wave SpeedRyosuke Sato, YOKOHAMA National University

01O-13TEOS and thermal oxide low temperature direct wafer bonding dynamics
Laurent Gaetan Michaud, EV Group

14:50

01O-14[Keynote]Recent developments on hydrophilic and hybrid direct bonding mechanism.
Frank Fournel, Univeristy Grenoble Alpes, CEA LETI

15:30

01O-15[Invite] Comprehensive Wafer Bond Strength Measurement: Fundamentals to Industry Standards
Fumihiro Inoue, Yokohama National University

14:20

14:35

Hydorophilic
Bonding andFundamentals

15:50-16:00

SHORT BREAK

16:00-16:15

Closing Session

Poster Session (I)SurfaceActivatedBonding

17:00-18:00
October 30

LowTemperature
Bonding
Fundamantals

Power Device
Applicaitons

30P-01Room-temperature wafer bonding of p-InP and n-GaAs with p-InGaAs / n-InGaAs interface
Shuntaro Fujii, Chiba Institute of Technology

30P-02

Au flat micro-bump arrays fabricated by transfer and coining of Au thin films
Shintaro Goto, Tohoku University

30P-03

Improving distribution of bump allocation for bonding load uniformity toward 3D integration ofsuperconducting devices
Mizuki Homma, Saitama University

30P-04

Room temperature bonding of SiO2 wafers using ALD Al2O3 ultrathin film
Kenji Uno, Graduate School of Information Science and Electrical Engineering, Kyushu University30P-05

Structural variation during annealing at diamond/silicon heterointerfaces fabricated by surface activatedbonding
Yutaka Ohno, Institute for Materials Research, Tohoku University

30P-06

Blade Test to Characterize Bonded Interface Fabricated using Atomic Diffusion Bonding with Amorphous Si
and Al Films
Hikaru Iemura, Frontier Research Institute for Interdisciplinary Sciences (FRIS), Tohoku University

30P-07

Environmental moisture absorption by Oxide-coated Si wafers and effects on post-bonding void formation
and bond qualityAlessandro Stoppato, IMEC

30P-08

Evaluating Room Temperature Bonding of SiCN-SiCN films with Different Compositions
Yun-Hsuan Chen, National Yang Ming Chiao Tung University

30P-09Investigations on low temperature aluminium thermocompression bonding using surface passivation
technique.
Kevin Diex, Fraunhofer ENAS

30P-1020-mm-square GaN/diamond bonding without vacuum process
Takashi Matsumae, National Institute of Advanced Industrial Science and Technology (AIST)

30P-11

Functional GaN Heterogeneous Integrated Substrate Based on Wafer Bonding and Smart-cut Technology
Jiaxin Ding, National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystemand Information Technology, Chinese Academy of Sciences

30P-12

Ohmic contact formation on N-polar n-GaN surfaces exposed by wafer bonding and back surface process
Satoki Toka, Department of Physics and Electronics, Osaka Metropolitan University

30P-13Fabrication and Characterization of GaN HEMT with Nitride Buffer/Diamond Junctions
Yosei Sunamoto, Department of Physics and Electronics, Osaka Metropolitan University

30P-14

Polishing Polycrystalline Diamond for Direct Bonding using Ar/O2-mixed Gas Cluster Ion BeamCe Feng, SABers Co. Ltd30P-15Low Temperature Bonding of Diamond Heat Spreaders for Advanced Thermal Management
Matthias Danner, EV-GroupPoster Session (II)Surface
ActivatedBonding

31P-01100 GHz thin-film LNOI/Si optical modulator fabricated by room temperature wafer bonding
Seigo Murakami, Graduate School of Information Science and Electrical Engineering, Kyushu University

31P-02

Improvement of the effective thermal conductivity in DFC-PowerChip for highly intense laser gain media
Yoichi Sato, RIKEN SPring-8 Center, RIKEN, Japan

31P-03

Nb-In direct bonding at room temperature using surface activated bonding
Shoei Ishiyama, Saitama University

31P-04Electrical characteristics of thick-metal-film interconnects on silicon oxide films by directly bonding Al foils
Saki Murotani, Department of Physics and Electronics, Osaka Metropolitan University

31P-05

Loading Pressure Effects on the Bonded Interface Structure in Atomic Diffusion Bonding Using Thick AuFilms
Kosuke Noguchi, Frontier Research Institute for Interdisciplinary Sciences (FRIS), Tohoku University

31P-06

Effect of Ar-fast atom beam irradiaon on n-Ga2O3/n-Si electrical conductanceTakashi Matsumae, National Institute of Advanced Industrial Science and Technology (AIST)

31P-07

Surface modification of Cu films by gas cluster ion beams using organic acid vapor for wafer bonding
Noriaki Toyoda, University of Hyogo

31P-08Optimization of plating parameters for nanocrystalline copper for realizing low temperature Cu-Cu bonding
ANKUSH KUMAR, ICST, National Yang Ming Chiao Tung University, Taiwan

31P-09Hydroxide and fluoride catalyzed bonding interface closure for low temperature wafer bonding
Paul Noel, CEA LETI

31P-10

Crystal orientation dependence of low-temperature bonding using germanium and diamond substrates
Yuki Minowa, Tokyo University of Science

31P-11

Low Temperature LiTaO3-to-Si Wafer Bonding
Dominic Richter, Fraunhofer ENAS

31P-12

Influence of Annealing-induced Edge Voids in Wafer-to-Wafer (W2W) Direct Bonding
Sodai Ebiko, YOKOHAMA National University

31P-13

A systematic approach for tuning plasma-specific process results in plasma-activated low-temperature waferto-wafer bonding
David Doppelbauer, EV Group E. Thallner GmbH

31P-14Heat dissipation characteristics of GaN on polycrystalline diamond HEMTs
Chiharu Moriyama, Osaka Metropolitan University

31P-15Fabrication of GaN-on-diamond HEMT structures for low cost and high heat dissipation
Hazuki Tomiyama, Osaka Metropolitan University

31P-16SiC/Si heterojunction formed by oxide-free direct wafer bonding and its characterization
Chengguo Li, JFS Laboratory

31P-17

Patterning over the vertical sidewall for wiring front and backside electrodes on the device chip
Yuki Ito, Toyota Technological Institute

Metal andHybrid Bonding

14:50-15:50
October 31

Hydrophilic
Bonding andFundamental

Power Device
Applications

New Process for
3D Integration