Complementary MOSFET (common drain)
ELM55604CA-S■General description

http://www.elm-tech.com■Features

ELM55604CA-S uses advanced trenchtechnology to provide excellent Rds(on),low gate charge and low gate thresholdvoltage.

N-channel

P-channel• Vds=40V• Id=8.0A• Rds(on) = 20mΩ(Vgs=10V)• Rds(on) = 30mΩ(Vgs=4.5V)■Maximum absolute ratings
Parameter

SymbolVds

Drain-source voltage
Gate-source voltage

Ta=25°C. Unless otherwise noted.
N-ch (Max.)
P-ch (Max.)
Unit40-40VVgs

Continuous drain current(Tj=150°C)

±20
8.0
6.0

±20-7.0-6.0

VIdm

20-30APd

2.8
1.8

2.8
1.8

W

TjTstg150-55 to 150

150-55 to 150°C°C

Ta=25°C
Ta=70°C

Pulsed drain current

Id

Tc=25°C
Tc=70°C

Power dissipation
Operating junction temperature
Storage temperature range• Vds=-40V• Id=-7.0A• Rds(on) = 38mΩ(Vgs=-10V)• Rds(on) = 54mΩ(Vgs=-4.5V)

A■Thermal Characteristics
Parameter
Thermal resistance junction-to-ambient
Thermal resistance junction-to-ambient

SymbolRθjaRθja■Pin configuration

1 23 4

Typ.

Max.
62.5
62.5

Unit°C/W°C/W■Circuit

TO-252-4(TOP VIEW)
TAB

DeviceN-chP-ch• N-ch
Pin No.

Pin name

123SOURCE1GATE1
SOURCE24TABGATE2DRAIN1/DRAIN2• P-chRev.1.0
1/ 8

Complementary MOSFET (common drain)
ELM55604CA-S

http://www.elm-tech.com■Electrical characteristics (N-ch)Parameter

SymbolTa=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit

Condition

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=250μA, Vgs=0V

Zero gate voltage drain current

IdssVds=32V, Vgs=0V

40
Ta=85°C

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=250μA

1.0

On state drain current

Id(on) Vgs=10V, Vds≥5V

20

Static drain-source on-resistanceRds(on)

μA

±100
3.0nA
VA

1318

Vds=15V, Id=5.0A
Is=2A, Vgs=0V

25
0.85

Vgs=0V, Vds=20V, f=1MHz

850
110

pF
pF

75

pF

Gfs
Vsd
Is

Input capacitance
Output capacitance

CissCossReverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge

CrssGate-source charge

Qgs

Gate-drain charge
Turn-on delay time

Qgdtd(on)Turn-on rise timetr
RL=4Ω, Id≡5.0A
td(off)Rgen=1Ωtf

Turn-off delay timeTurn-off fall time

110Vgs=10V, Id=15A
Vgs=4.5V, Id=12A

Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS

Qg

V

Vgs=4.5V, Vds=20V
Id≡5.0A
Vgs=10V, Vds=20V

10.0

2030
1.20
1.5

14.0mΩ
SVAnC

2.8nC

3.2612nCns

10202036nsns

612ns

Rev.1.0
2/ 8

AFC5604

Alfa-MOS

40V N & P Pair
Technology(common drain) Mode MOSFET
Complementary MOSFETEnhancement
ELM55604CA-S■Typicalelectrical andthermal characteristics(N-ch)
TypicalCharacteristics( N-Channel)©Alfa-MOS Technology Corp.
Rev.A Jan. 2012

http://www.elm-tech.com

www.alfa-mos.com
Page 4
Rev.1.0

3/ 8

AFC5604

Alfa-MOS

40V N & P Pair
TechnologyMode MOSFET(common drain)
Complementary MOSFETEnhancement
ELM55604CA-S
Typical Characteristics ( N-Channel )©Alfa-MOS Technology Corp.
Rev.A Jan. 2012

http://www.elm-tech.comwww.alfa-mos.com
Page 5

Rev.1.0
4/ 8

Complementary MOSFET (common drain)
ELM55604CA-S

http://www.elm-tech.com■Electrical Characteristics (P-ch)
Parameter

SymbolTa=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit

Conditions

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=-250μA, Vgs=0V

Zero gate voltage drain current

Idss

Vds=-32V, Vgs=0V-40
Ta=85°C

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=-250μA-1.0

On state drain current

Id(on) Vgs=-10V, Vds≥-5V-20

Static drain-source on-resistanceRds(on)μA±100-3.0

nAVA3044

Vds=-15V, Id=-5A
Is=-2A, Vgs=0V

20-0.8

Vgs=0V, Vds=-20V, f=1MHz

1100
145

pF
pF

115

pF

Gfs
Vsd
Is

Input capacitance
Output capacitance

Ciss
Coss

Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge

CrssGate-source charge

Qgs

Gate-drain charge
Turn-on delay time

Qgd
td(on)

Turn-on rise timetrVgs=-4.5V, Vds=-20V
td(off) Id=-5.0A, RL=4Ω, Rgen=1Ω

Turn-off delay timeTurn-off fall time-1-20

Vgs=-10V, Id=-15A
Vgs=-4.5V, Id=-12A

Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERSQg

V

Vgs=-4.5V, Vds=-20V
Id=-5.0A

tf

13.0

38
54-1.2-1.7

20.0mΩ
SVA

nC

4.5

nC

6.5
40

80

nC
ns

55
30

10060

nsns

1220nsRev.1.05/ 8

AFC5604

Alfa-MOS

40V N & P Pair
Technology(common drain) Mode MOSFET
Complementary MOSFETEnhancement
ELM55604CA-S■Typicalelectrical andthermal characteristics(P-ch)
TypicalCharacteristics( P-Channel)©Alfa-MOS Technology Corp.
Rev.A Jan. 2012

http://www.elm-tech.com

www.alfa-mos.com
Page 6
Rev.1.0

6/ 8

AFC5604

Alfa-MOS

40V N & P Pair
Technology
Mode MOSFET(common drain)
Complementary MOSFETEnhancement
ELM55604CA-S
Typical Characteristics ( P-Channel )©Alfa-MOS Technology Corp.
Rev.A Jan. 2012

http://www.elm-tech.com

www.alfa-mos.com
Page 7

Rev.1.0
7/ 8

AFC5604

Alfa-MOS

40V N & P Pair
Technology
Mode MOSFET(common drain)
Complementary MOSFET Enhancement
ELM55604CA-S
Typical■Test
Characteristics
circuit and waveform©Alfa-MOS Technology Corp.
Rev.A Jan. 2012

http://www.elm-tech.com

www.alfa-mos.com
8/ 8

Rev.1.0
Page 8