CIPS 2024

CIPS 2024
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Digital Twin and Virtual Release of Automotive Electronics

Chairs: Nando Kaminski (University of Bremen, Germany), Andreas Lindemann (University of Magdeburg,
Germany)

Digital Twin and Virtual Release of Automotive Electronics ........................................ 1
Florian Loos, Johannes Schautzgy, Martin Obermayr, Markus Tauscher, Libor Sova and Milada
Krejcova (ZF Friedrichshafen AG, Germany)

Design Automation for Power Electronics: a path towards realization

Chairs: Nando Kaminski (University of Bremen, Germany), Andreas Lindemann (University of Magdeburg,
Germany)

Design Automation for Power Electronics: a path towards realization........................ 8
Kevin Hermanns (PE-Systems gmbh, Germany)

Potential of Monolithically-Integrated Bidirectional GaN Devices in
Isolated DC/DC Converters and Soft- and Hard-Switched Inverters
Unlocking the Opportunities of Bidirectional GaN Devices in Isolated DC/DC
Converters and Multilevel Inverters ......................................................................... 15
Marco Liserre and Reza Barzegarkhoo (Christian-Albrechts-Universität zu Kiel, Germany)

Automotive Plug&Play Gate-Driver for 1200V Automotive SiC/IGBT
Modules

Chairs: Klaus Hoffmann (Helmut-Schmidt-Universität, Germany), Regine Mallwitz (Technische Universität
Braunschweig, Germany)

Automotive Plug&Play Gate-Driver for 1200V Automotive SiC/IGBT Modules .......... 25
Michael Hornkamp (Power Integrations GmbH, Germany)

About the perplexing functionality of soft magnetic components in thefield despite all the manufacturing and material tolerances andinaccuracies in the calculations

Chairs: Klaus Hoffmann (Helmut-Schmidt-Universität, Germany), Regine Mallwitz (Technische Universität
Braunschweig, Germany)

Soft Magnetic Components: Functional in Practice Despite Tolerances andCalculation Inaccuracies........................................................................................... 35
Dennis Kampen (City University of Applied Sciences Bremen, Germany); Michael Owzareck,
Sascha Langfermann and Lukas Fräger (BLOCK Transformatoren-Elektronik GmbH, Germany)

The latest material technology to support power module packaging

Chairs: Klaus Hoffmann (Helmut-Schmidt-Universität, Germany), Regine Mallwitz (Technische Universität
Braunschweig, Germany)

The latest material technology to support power module packaging ........................ 40
Koji Makihara (Company of Material & Sumitomo Bakelite Co., Ltd., Japan)
IVCIPS 2024

Paradigm Shift in Power Electronics Towards Circular Economy
CompatibilityLife-Cycle Carbon Footprints of Low-Voltage Motor Drives with 600-V GaN or
650-V SiC Power Transistors .................................................................................... 44
Jonas E. Huber, Luc Imperiali and David Menzi (ETH Zurich, Switzerland); Franz Musil (Fronius
International GmbH, Austria); Johann. W. Kolar (ETH Zurich, Switzerland)

Poster Sessions
Interest of high frequency decoupling inductors for reducing common modecurrent in high speed switching cells........................................................................ 54
Nicolas Botter (University of Lille, France); Yvan Avenas (Grenoble Université, France); JeanLuc Schanen and Jean-Michel Guichon (University Grenoble Alpes, France); Wendpanga-Abdoul
Bikinga (Université Grenoble Alpes, France)
Investigating the Effect of Voltage and Current Stress on Temperature Dependent
On-State Resistance in GaN HEMT Power Devices .................................................... 62
Tianyu Li (Otto Von Guericke University Magdeburg, Germany); Andreas Lindemann(University of Magdeburg, Germany)
An Improved Approach for an Intermediate Measurement Routine of Dynamic
on-state Resistance for GaN Power devices.............................................................. 69
Maximilian Goller and Joerg Franke (Chemnitz University of Technologies, Germany); Gengqi Li
and Josef Lutz (Chemnitz University of Technology, Germany); Gilberto Curatola and Samir
Mouhoubi (Huawei Nuremberg Research Center, Germany); Thomas Basler (Chemnitz
University of Technology, Germany)
Single Supply High Voltage Module with no Auxiliary Bootstrap Network ................ 74
Claudio Villani (Università Degli Studi di Pavia, Italy & Infineon Technologies, Italy); Stefano
Ruzza (Infineon Technologies, Italy); Piero Malcovati and Edoardo Bonizzoni (University ofPavia, Italy)
Evaluation of a Rogowski-based di/dt sensing for temperature monitoring of SiC
MOSFET in TO-247 package ...................................................................................... 81
Julien Morand (Mitsubishi Electric R&D Centre Euope, France); Arthur Jamois (Mitsubishi
Electric R and D Centre Europe, France)
Integration of controllable inductors in hardware in the loop systems ..................... 89
Herbert Maier, Jonas Pfeiffer and Michael Schmidhuber (SUMIDA Components & Modules
GmbH, Germany)
Wide Bandwidth PCB Rogowski Coil Current Sensor with Droop Suppression and
DC Restoration for In-Situ Inverter Measurements .................................................. 95
Simon Quergfelder, Julian Sax, Thomas Heckel and Bernd Eckardt (Fraunhofer Institute forIntegrated Systems and Device Technology, Germany); Martin März (Friedrich-AlexanderUniversität Erlangen-Nürnberg, Germany)
Evaluation of the thermal fatigue and failure mechanisms on Power Modules
with different types of substrates (DBC / IMS) ...................................................... 103
Chiara Spano and Giulio Galfrè (Polytechnic of Turin, Italy); Emilio Mattiuzzo and Lorenzo
Dancona (Vishay Semiconductor Italiana, Italy); Valentina Bertana (Politecnico di Torino,
Italy); Luciano Scaltrito and Sergio Ferrero (Polytechnic of Turin, Italy)
Performance Test of a 450 V Polymer Aluminium Electrolytic Capacitor ................. 110
Thomas Ebel and Shova Neupane (CIE SDU, Denmark); Rando Rassmann (University ofApplied Science Kiel, Germany); Ulf Schümann (University of Applied Sciences Kiel, Germany);
Matthias Hammerl (Vitesco Technologies GmbH, Germany); Andreas Greif (Vitesco, Germany)VCIPS 2024

Optimized Super Cascode Circuit for Electrical Testing under High Frequencies,
Voltages, and Pulse Steepness ............................................................................... 115
Christian Hüther (CRW Engineering, Germany); Tobias Raulf (Engineer at CRW, Germany);
Sebastian Wels (Universität Kassel, Germany); Felix Fehmer (University Kassel, Germany)
Thermomechanical characterisation of soft potting materials and stress reduction
by compressibility .................................................................................................. 119
Martin Rütters and Jonas Wirries (Fraunhofer IFAM, Germany)
Nickel as Phase Growth Accelerator in Ternary Solder Systems ............................. 125
Jessica Richter (University of Applied Sciences Düsseldorf, Germany); Benjamin Schellscheidt(Hochschule Düsseldorf - University of Applied Sciences, Germany); Anna Kopczynski(University of Applied Sciences Düsseldorf, Germany); Thomas Licht (Hochschule Düsseldorf,
Germany)
Examination of the Pore Structure of Copper Sintered Die Attach Layers by Local
Thickness Analysis and Scratch Test ...................................................................... 131
Olaf Rämer (Technische Universität Berlin & Fraunhofer IZM, Germany); Matthias Hutter(Fraunhofer IZM, Germany); Martin Schneider-Ramelow (Fraunhofer IZM & TU Berlin,
Germany)
Evaluation of accuracy and performance of an optimized simulation model bymeasuring a manufactured test vehicle .................................................................. 139
Gerald Weis and Janagan Papperi Devarajulu Deenadayalan (AT & S Austria Technologie &Systemtechnik Aktiengesellschaft, Austria)
Development of High-speed Current Switch Box for Transient Thermal
Characterization of SiC Power Modules .................................................................. 145
Shuhei Fukunaga and Tsuyoshi Funaki (Osaka University, Japan)
Fast Two-Step Sintering Process with High Strength.............................................. 150
Benjamin Schellscheidt (Hochschule Düsseldorf - University of Applied Sciences, Germany);
Anna Kopczynski and Jessica Richter (University of Applied Sciences Düsseldorf, Germany);Thomas Licht (Hochschule Düsseldorf, Germany)
Testing of SiC MOSFETs for short over-current pulses of 1 ms................................ 153
Shubhangi Bhadoria (KTH Royal Institute of Technology, Sweden); Hans-Peter Nee (KTH RoyalInstitute of Technology & EES/E2C, Sweden)
Analytical Design of a Finite Input Inductance 34.5 MHz Class E Inverter for
Wireless Power Transfer ........................................................................................ 159
Matthieu Beley, Mohamed El-Khattabi, Loris Pace and Arnaud Breard (Univ Lyon, Ecole
Centrale de Lyon, INSA Lyon, Université Claude Bernard Lyon 1, CNRS, Ampère, UMR5005,
69130 Ecully)
Systematic evaluation of DC-link capacitors for GaN applications .......................... 167
Tobias Fricke (TU Braunschweig, Germany); Regine Mallwitz (Technische Universität
Braunschweig, Germany)
Exploring coupling coil integration in Power Semi-Conductor Modules
environment for sensing in Railway traction .......................................................... 175
Yannick Dumollard (Alstom, France); Vincent Escrouzailles (ALSTOM SA, France); EmmanuelBatista (ALSTOM, France); Damien Tisne-Grimaud (Alstom, France)VICIPS 2024

Why the 3dB bandwidth of a current sensor does not provide an exact statement
about its measurement capability .......................................................................... 182
Hauke Lutzen (University of Bremen, Germany); Philipp Ziegler (University of Stuttgart,
Germany); Jonas Müller (University of Bremen, Germany); Jörg Roth-Stielow (University of
Stuttgart, Germany); Nando Kaminski (University of Bremen, Germany)
A high voltage DC/AC unipolar converter to drive a piezoelectric actuator with
controlled response times ...................................................................................... 190
Nassim Bennacer (University Claude Bernard Lyon 1, France); Christian Martin (Univ Lyon,
UCB Lyon 1, CNRS, AMPERE, France); Loris Pace (Ecole Centrale de Lyon, France)
Balanced core fluxgate DC current transducers for high precision measurement
up to 10 MHz .......................................................................................................... 196
Roland Buerger ( & Danisense, Germany); Morten Birkerod Lillholm and Henrik Elbæk
(Danisense, Denmark)
Voltage-Sensorless Control and GaN Multilevel Converter for Charging Non-Linear
and Lossy Electrocaloric Capacitors ........................................................................ 202
Stefan Mönch, Richard Reiner, Michael Basler, Patrick Waltereit and Rüdiger Quay (Fraunhofer
IAF, Germany); Kilian Bartholomé (Fraunhofer IPM, Germany)
Technique for Measuring the Capacitance-Voltage Characteristics of GaN and SiC
Bidirectional Power Switches ................................................................................. 208
Michael Bosch, Dominik Koch, Jeremy Nuzzo and Ingmar Kallfass (University of Stuttgart,
Germany)
Optimal parameters design of bidirectional buck-boost three-level DC-DC
converter based on Pareto front for electrochemical energy storage .................... 213
Zechun Dou, Bo Tan, Le Wentao, Yu Qi and Yanping Chen (CRRC, China)
A Systematical and Analytical Driver Layout Design Procedure for Parallel
GaN GIT Power Semiconductors ............................................................................. 220
Moritz Peinsipp (Fraunhofer Institute for Energy Economics and Energy Systems Technology,
Germany); Bikash Sah (Hochschule Bonn-Rhein-Sieg, Germany); Sebastian Sprunck(Fraunhofer Institute for Energy Economics and Energy Systems Technology, Germany); Marco
Jung (Fraunhofer Institute for Energy Economics and Energy System Technology, Germany)
Influence of Vds Bias on SiC MOSFET Dynamic Gate Stress .................................... 228
Mathias Gebhardt and Gabriel Lieser (SET GmbH, Germany)
Investigation of TSEPs for junction temperature estimation of GaN and
SiC devices in power cycling tests .......................................................................... 233
Dennis Wöhrle and Daniel Wattenberg (Fraunhofer Institute for Solar Energy Systems ISE,
Germany); Bruno Burger (Fraunhofer-Institut für Solare Energiesysteme ISE, Germany);
Oliver Ambacher (University of Freiburg, Germany)
Challenges of Junction Temperature Calibration of SiC MOSFETs forPower Cycling - a Dynamic Approach ..................................................................... 239
Jakob Breuer and Fabian Dresel (Fraunhofer IISB, Germany); Andreas Schletz and Johannes
Klier (SCHLETZ GmbH, Germany); Jürgen Leib (Fraunhofer-Institut für Integrierte Systeme
und Bauelementetechnologie, Germany); Martin März (Friedrich-Alexander-Universität
Erlangen-Nürnberg, Germany); Bernd Eckardt (Fraunhofer Institute for Integrated Systems
and Device Technology, Germany)
A Fast Source to Drain Voltage Measurement in Bridge Topologies Using a
Freewheeling Path for Dynamic Power Cycling Tests ............................................. 246
Kevin Muñoz Barón, Sarthak Swaroop Dash, Oleksandr Solomakha and Ingmar Kallfass(University of Stuttgart, Germany)VII

CIPS 2024

Evaluation of failure modes in film capacitors after accelerated lifetime testing
compared to field returns ....................................................................................... 253
Marco Rudolph (Fraunhofer Institute for Microstructures of Materials and Systems IMWS,
Germany); Falk Naumann (Fraunhofer Institute for Microstructure of Materials and Systems
IMWS, Germany); Bolko Mühs-Portius (Fraunhofer Institute for Microstructures of Materials
and Systems IMWS, Germany); Sandy Klengel (Fraunhofer Institute for Microstructure ofMaterials and System, Germany); Jan Knoch (Electronicon Kondensatoren GmbH, Germany)
Implementation of a Junction Temperature Cycle Recorder in a Battery Electric
Vehicle and Accuracy Assessment by Road Testing ................................................ 259
Marco Denk, Marvin Esau, Ole Ubben and Sascha Fritsch (University of Applied Sciences
Coburg, Germany)
Accelerated Quality Testing for Coatings in High Voltage Applications ................... 267
Markus R. Meier, Helmut Schweigart and Mirco Eckardt (ZESTRON Europe, Germany)
Condition Monitoring of Power Modules for SiC and GaN Semiconductors by
Piezoelectric Effect ................................................................................................. 273
Philipp Bickel (Hochschule Bonn-Rhein-Sieg and Siemens AG, Germany); Marco Jung (BonnRhein-Sieg UAS, Germany); Albrecht Donat and Kai Kriegel (Siemens AG, Germany); Gerhard
Mitic (Siemens, Germany); Christian Walbrecker-Baar (Siemens AG, Germany)
A Novel Multi-Stage Ensemble Method for Online Junction Temperature
Estimation of SiC MOSFETs ..................................................................................... 281
Zekun Li, Puzhen Yu and Bing Ji (University of Leicester, United Kingdom (Great Britain));
Wenping Cao (Anhui University, China)
Reliability Analysis of Power Electronics Encapsulations using Electrochemical
Impedance Spectroscopy ....................................................................................... 287
Paul Gierth, Uta Gierth, Michael Schneider and Lars Rebenklau (Fraunhofer IKTS, Germany);
Markus R. Meier, Helmut Schweigart and Mirco Eckardt (ZESTRON Europe, Germany); Peter
Schrems (IPS-Elektroniklabor GmbH, Germany)
Reducing SMPS Size and Losses with a Novel Piezoelectric EMI Filter .................... 292
Florian Hubert (University of Freiburg, Freiburg, Germany); Daniel Kuebrich and Thomas
Duerbaum (University of Erlangen Nuremberg, Germany); Stefan Rupitsch (Albert-LudwigsUniversität Freiburg - IMTEK, Germany)
A high-frequency performance and degradation study of adhesive conductive
EMI shielding tapes during High-Temperature Storage .......................................... 297
Norbert Seliger and Cordula Helmbrecht (Technische Hochschule Rosenheim, Germany)
Adaptive Dead Time Control for GaN HEMTs Based on a Time-Discrete
Extremum-Seeking System..................................................................................... 304
Tobias Fink (Universität Stuttgart, Germany); Dominik Koch and Ingmar Kallfass (University of
Stuttgart, Germany)
A three-phase coupled inductor for a medium voltage high power
charging system ..................................................................................................... 310
Christian Blaum (SUMIDA Components & Modules GmbH); Philemon Wrensch, Jonas Pfeiffer,
Christoph Drexler and Michael Schmidhuber (SUMIDA Components & Modules GmbH,Germany); David Derix and Andreas Hensel (Fraunhofer ISE, Germany)
Metal-Air-FR4 Electrical Field Management with Embedded Electrical Field Plates
for PCB Embedded Power Electronics ..................................................................... 318
Paul Bruyere (Univ Grenoble Alpes, CNRS, Grenoble INP*, G2ELAB & Ecole Centrale de Lyon,
INSA Lyon, Universite Claude Bernard Lyon 1, CNRS Ampère, France); Eric Vagnon (Ecole
Centrale de Lyon, France); Yvan Avenas (Grenoble Université, France); Mohamed El-Khattabi(CNRS, France)

VIIICIPS 2024

Test bench for the characterization of two-phase passive immersion cooling of
power electronic devices ........................................................................................ 325
Clément Hugon (Grenoble-INP & G2Elab, France); Yvan Avenas (Grenoble Université, France);
Samuel Siedel (Grenoble Institute of Technology, France); Sébastien Flury (G2Elab, France)
Stray Inductance of a Modular Switching Cell Designed for Easier Disassembly..... 333
Moises Ferber de Vieira Lessa (Université Grenoble Alpes & Universidade Federal de Santa
Catarina, France); Paul Bruyere (Univ Grenoble Alpes, CNRS, Grenoble INP*, G2ELAB & Ecole
Centrale de Lyon, INSA Lyon, Universite Claude Bernard Lyon 1, CNRS Ampère, France);
Nicolas Botter (University of Lille, France); Alejandro Emmanuel Can Ortiz (Universite Toulouse
III - Paul Sabatier, France); Souhila Bouzerd (Université Gustave Eiffel, France); Jean-Michel
Guichon (University Grenoble Alpes, France); Jean-Luc Schanen (Grenoble ElectricalEngineering Laboratory, France); Alexis Derbey (G2Elab, France); Eric Vagnon (Ecole Centralede Lyon, France); Celine Combettes (Université Toulouse III, France); Vincent Bley (Universitéde Toulouse UPS INPT LAPLACE, France); Emmanueal Sarraute (Université Toulouse, France);
Laurent Dupont (Université Gustave Eiffel, France & Laboratoire SATIE, France); Yvan Avenas(Grenoble Université, France)
Accelerated Voltage Endurance Test and Insulation Lifetime Estimation of
Silicone-Gel Encapsulated Direct-Bond-Copper Substrates for Medium-Voltage
Power Module Packaging ........................................................................................ 341
Yuan Gao (Aalborg University, Denmark); Zichen Zhang and Zachary Zintak (Virginia Tech,
USA); Emmanuel Arriola (De La Salle University, Philippines); Thore Aunsborg and Stig MunkNielsen (Aalborg University, Denmark); Guo-Quan Lu (Virginia Tech, USA)
Die-Level Series-Connection of SiC MOSFETs and Integration of Decoupling
Capacitors .............................................................................................................. 346
Tobias N Ubostad (Norwegian University of Science and Technology, Norway); Dimosthenis
Peftitsis (Norwegian University of Science and Technology, NTNU, Norway)
A Parasitic Extraction Strategy for Four-Terminal Power Devices........................... 353
Mathias Carl Johannes Weiser and Ingmar Kallfass (University of Stuttgart, Germany)
Evaluation of Different Diode Technologies in a Si-SiC Hybrid Switch Used in a
540V/30kVA Inverter ............................................................................................. 361
Marco V. T. Andrade and Bernardo Cougo (IRT Saint-Exupery, France); Lenin M. F. Morais(Universidade Federal de Minas Gerais, Brazil); Gustavo S. Zapulla (IRT Saint-Exupery,
France)Investigation on failure mechanisms of a PCB based package using DC active
power cycling ......................................................................................................... 368
Rémi Perrin and Pierre-Yves Pichon (Mitsubishi Electric R&D Centre Europe, France); Julien
Morand (Mitsubishi Electric R&D Centre Euope, France); Johan Le Leslé and Guillaume Lefevre(Mitsubishi Electric R&D Centre Europe, France)
DC and AC Side Filter Design for Interleaved Three Phase Three Level ANPC HighPower GaN-PV Inverters Using Coupled AC Inductors
Fan Wang (Fraunhofer Institute for Energy Economics and Energy System Technology IEE,
Germany); Valentin Wagner (University of Applied Sciences Cologne, Germany); Sebastian
Sprunck (Fraunhofer Institute for Energy Economics and Energy Systems Technology,
Germany); Christian Dick (TH Köln, Germany); Marco Jung (Fraunhofer Institute for Energy
Economics and Energy System Technology, Germany)
GaN power converter with low inductive hybrid PCB technology
Gerrit Braun, Julian Wethmar and Jan-Thorben Kessler (SMA Solar Technology AG, Germany)

IX

CIPS 2024

S05: Solder and Sinter Reliability
The Reliability of High Temperature Pb-Free Solder for High Power
Semiconductor Device Packaging ........................................................................... 392
Maryam Khalilah Binti Mat, Thomas Grant, Muhammad Morshed and Yangang Wang (Dynex
Semiconductor Ltd, United Kingdom (Great Britain))
Novel low temperature alloy for molded power module soldering to customized
heatsinks ................................................................................................................ 399
Ryan W Mayberry and Joe Hertline (Indium Corporation, USA); Aaron Hutzler (BondPulse
GmbH, USA)AC Filter Capacitors Reliability and Lifetime in Grid-Tied Inverters ........................ 403
Thang Nguyen and Francois Delince (Hitachi Energy, Belgium); Fabien Meinguet (Engie
Research & Innovation & Laborelec, Belgium); Alaa Hilal and Ramon Garcia-Rojo (Hitachi
Energy, Belgium)
Influence of hard encapsulation onto reliability of soldered die-attach in power
modules.................................................................................................................. 411
Mario Sprenger, Freerik Forndran and Beyza Öztürk (Vitesco Technologies, Germany); Marcel
Sippel (Siemens AG, Germany); Manuela Ockel (Friedrich-Alexander Universität ErlangenNürnberg, Germany); Christian Goth (Vitesco Technologies, Germany); Jörg Franke (FAU
Erlangen-Nuremberg, Germany)
Estimation of thermo-mechanical Anand model parameters of die-attachmaterials for power electronics assemblies ............................................................ 416
Naüm Fusté (IMB-CNM CSIC, Spain); Emma Solà (Instituto de Microelectronica de Barcelona IMB-CNM,
CSIC, Spain); Oriol Aviñó (IMB-CNM CSIC, Spain); Xavier Perpiñá (CSIC Tenured Scientist, Centre Nacionalde Microelectrònica (CNM-IMB-CSIC), Spain); Miquel Vellvehi and Xavier Jordà (IMB-CNM CSIC, Spain)

S01: Components to be integrated
Anti-ferroelectric MLCCs with high energy density for DC link applications ............ 421
Holger Neubert and Christian Molin (Fraunhofer Institute for Ceramic Technologies andSystems IKTS, Germany); Sylvia E. Gebhardt (Fraunhofer Institut für Keramische
Technologien und Systeme, Germany)
Design, Characterisation and Implementation of PCB Based 3-Φ Coupled
Inductors for High Power Density Interleaved DC-DC Converter ............................ 426
Johan Le Leslé and Guillaume Lefevre (Mitsubishi Electric R&D Centre Europe, France)
Fabrication and characterization of low value embedded resistors for use in PCB
embedded RC snubber for more integrated converter ............................................ 435
Alejandro Emmanuel Can Ortiz and Vincent Bley (Universite Toulouse III - Paul Sabatier,France); Nicolas Botter (University of Lille, France); Yvan Avenas (Grenoble Université, France)
Multidimensional Switching Loss Analysis of Various 1200 V SiC - Power MOSFET
Technologies .......................................................................................................... 440
Ruben Schnitzler, Erine Eliana Dos Santos Gomes, Dominik Koch, Petar Rasic and Ingmar
Kallfass (University of Stuttgart, Germany)
Self-controlled driver circuit optimizing dead time in fast GaN converters ............. 446
Viktoria Schwarzott (TU Berlin, Germany); Carsten Kuring (Technische Universität Berlin,
Germany); Sibylle Dieckerhoff and Nick Wieczorek (TU Berlin, Germany)XCIPS 2024

S05: Mission Profile
Sulphide dendrite growth in semiconductor power modules: Toward mission
profile calculations of temperature, humidity and H2S concentration
dependences .......................................................................................................... 453
Tobias N Wassermann (Infineon Technologies AG, Germany); Oliver Schilling (Infineon AG,
Germany)
A Methodology to Estimate On-Voltage Degradation of Power Devices According
to a Power Cycling Mission Profile .......................................................................... 462
Alessandro Vaccaro (Universty of Padua, Italy); Paolo Magnone (University of Padova, Italy)
Mission-Profile-Related Evaluation of the Threshold-Voltage Stability of SiC
MOSFETs................................................................................................................. 467
Joao Oliveira, Regis Meuret and Fabio Coccetti (IRT Saint-Exupery, France); Roman Boldyrjewmast, Clemens Herrmann and Thomas Basler (Chemnitz University of Technology, Germany);
Herve Morel (Université de Lyon, INSA Lyon, Lab Ampère, CNRS, France)
Reliability Assessment of Modular Multilevel Converters: A Comparative Studyof MIL and Mission Profile Methods ........................................................................ 476
Miad Ahmadi, Faezeh Kardan and Aditya Shekhar (Delft University of Technology, The
Netherlands); Pavol Bauer (TU Delft, USA)
Modified Approach for the Rainflow Counting Analysis of Temperature Load
Signals in Power Electronics Modules ..................................................................... 483
Sebastian Letz (Fraunhofer Institute for Integrated Systems and Device Technology IISB,
Germany); Dawei Zhao (Friedrich-Alexander-Universität Erlangen-Nürnberg, Chair of Electron
Devices, 91058 Erlangen, Germany); Martin März (Friedrich-Alexander-Universität ErlangenNürnberg, Chair of Power Electronics, 90429 Nürnberg, Germany); Bernd Eckardt (Fraunhofer
Institute for Integrated Systems and Device Technology, Germany); Jürgen Leib (FraunhoferInstitut für Integrierte Systeme und Bauelementetechnologie, Germany)

S02: The impact of materials
Horizontal Cracks in PCB Embedded Semiconductor Devices: A Real Problem or a
Ghost Hunt?............................................................................................................ 490
Till Huesgen and Ankit Bhushan Sharma (Hochschule Kempten - University of Applied Science,
Germany)
Cu-Si3N4 AMB-substrates for circuit boards in power electronics .......................... 496
Axel Rost (Fraunhofer IKTS, Germany); Maciej Kuczynski (AlzChem, Germany); Eveline
Zschippang (Fraunhofer IKTS, Germany); Peter Dold (Fraunhofer IWKS, Germany); Sindy
Mosch (Fraunhofer IKTS, Germany); Stefanie dos Santos (Aurubis Stolberg GmbH u Ko. KG,
Germany); Paul Gierth (Fraunhofer IKTS, Germany); Jörg Winhauer (PVA IVS, Germany); Jan
Pfeiffer (PVA LWT, Germany); Jochen Schilm and Mathias Herrmann (Fraunhofer IKTS,
Germany)
The Attractions, Challenges, and Potential of Copper Sinter Paste for PowerElectronics Applications.......................................................................................... 503
Susanne Duch (Heraeus Electronics GmbH & Co. KG, Germany); Stefan Gunst (Heraeus
Deutschland GmbH & Co. KG, Germany); Sascha Reh (Technische Hochschule Aschaffenburg,
Germany)
Ultrasonic Rivet Welding as Signal Technology in Power-Modules.......................... 509
Florian Dreps, Nils Zoellner, Georg Borghoff and Karsten Guth (Infineon Technologies AG,
Germany); Guido Strotmann (Infineon Technologies, Germany)
Evaluating non-isolated chip-assembly with direct liquid cooling ........................... 515
Martin Schulz and Lukas Kreiner (Littelfuse Europe, Germany); Ralf Klemmer (Littelfuse,
Germany)
XI

CIPS 2024

S05: Reliability Stressors
Investigation of thermo-mechanical fatigue in lateral GaN power transistors withvariable switching and conduction losses ............................................................... 519
Lukas Hein and Thomas Basler (Chemnitz University of Technology, Germany); Christian
Schwabe (Technical University of Chemnitz, Germany); Maximilian Goller (Chemnitz Universityof Technologies, Germany)
Aging of Insulation Materials under Repetitive Impulse Voltage Stress ................. 526
Albert Claudi (University of Kassel & CRW-Engineering UG, Germany); Tobias Raulf (Universityof Kassel, Germany); Felix Fehmer (University Kassel, Germany); Robert Klengel (Fraunhofer
Institute for Microstructure of Materials and Systems IMWS, Germany)
Energy Balancing in Paralleled SiC MOSFETs During an Avalanche Event ............... 532
Clemens Herrmann, Mengdi He, Mohamed Alaluss and Thomas Basler (Chemnitz University ofTechnology, Germany); Rudolf Elpelt and Guang Zeng (Infineon Technologies AG, Germany)
Characterisation of 1200 V SiC-MOSFETs - Influence of Repetitive Short-Circuit
Events on Device Parameters ................................................................................. 540
Sönke Brandt, Martin Rasch and Tim Wanagat (Helmut-Schmidt-University, Germany); Klaus
Hoffmann (Helmut-Schmidt-Universität, Germany)
Investigation of Moisture Absorption and Drying Characteristics of HVIGBTPower Modules ....................................................................................................... 547
Yasuhiro Sakai, Kazuto Mikami, Kenji Hatori, Keiichi Nakamura and Daisuke Oya (Mitsubishi
Electric Corporation, Japan); Nils Soltau (Mitsubishi Electric Europe B. V., Germany)
Step-Change in HV-H³TRB Performance of Latest Silicon IGBTs and Advanced
Humidity Testing Methods ...................................................................................... 553
Jan-Hendrik Peters, Michael Hanf, Sven Clausner and Nando Kaminski (University of Bremen,
Germany)

S03: Design, modelling and testing of novel technologies
Automatic Generation of Thermal Models for PCB-based Power Electronics ........... 559
Bahaeddine Ben Hamed (Mitsubishi Electric R&D Centre Europe, Laboratoire Ampère ( INSA
Lyon FRANCE), France); Cyril Buttay (Université de Lyon Laboratoire Ampere CNRS UMR 5005
& Insa de Lyon, France); Ahmed Sabry Eltaher Ahmed (Mitsubishi Electric R&D Centre Europe& INSA Lyon, France); Guillaume Lefevre, Guillaume Regnat and Rémi Perrin (Mitsubishi
Electric R&D Centre Europe, France); Jacques Jay (Université de Lyon, France)
Optimizing Power Modules by Enhancing Power Density, Ease of Implementationand Supporting Automotive Reliability Requirements............................................. 566
Holger Müller (Infineon, Germany); Marco Stallmeister (Infineon Technologies AG, Germany);
Dietmar Spitzerr (Infineon Technologies, Austria)
Thermo-mechanical and electromagnetic simulations of a Half-Bridge Insulated
Prepackage for Modular Power Modules ................................................................. 574
Saimir Frroku (Ca' Foscari University of Venice, Italy); Ankit Bhushan Sharma and Till Huesgen(Hochschule Kempten - University of Applied Science, Germany); Andrea Irace (University of
Naples Federico II, Italy); Giovanni Salvatore (Ca' Foscari University of Venice, Italy)
Effect of local concavity of DBC substrate on junction-to-heatsink thermal
resistance of power module designs....................................................................... 582
Dániel Csiki and Máté Buza (Vincotech Kft, Hungary); Marius van Dijk (Fraunhofer IZM,
Germany); Matthias Tauer (Vincotech GmbH, Germany); Olaf Wittler (Fraunhofer IZM,
Germany)XII

CIPS 2024

Achieving High Heat Dissipation Power Module by Developing New Die Bonding
Material .................................................................................................................. 588
Kenji Hayashi and Kohei Tanikawa (ROHM Co., Ltd., Japan); Oji Sato (ROHM Co., Ltd, Japan);Takuzazu Otsuka and Keisuke Wakamoto (ROHM Co., Ltd., Japan); Filsecker Felipe (ROHM
Semiconductor GmbH, Germany); Tsuguki Noma (ROHM Co., Ltd., Japan); Mostafa Noah
(ROHM Semiconductor GmbH, Germany); Masashi Hayashiguchi (ROHM Co. Ltd., Japan);
Takaharu Ishibashi (Rohm Co. Ltd., Japan); Kotaro Shibata (ROHM, Japan)
Surge current test of SiC MOSFET with planar Assembly and Joining Technology... 592
Yijun Ye (University of Technology Chemnitz & Siemens AG, Germany); Alexander Hensler andThomas Bigl (Siemens AG, Germany); Thomas Basler and Josef Lutz (Chemnitz University ofTechnology, Germany); Pietro Botazzoli and Ralf Schmidt (Siemens AG, Germany)

S05: Power Cycling
Impact of VCE, sat Measurement Conditions on Cycle-to-failure Determination of
IGBT Samples in Power Cycling Test ...................................................................... 598
Yichi Zhang, Yi Zhang, Bo Yao and Huai Wang (Aalborg University, Denmark)Influence of Current Density on Power Cycling Test Results in DC Diode-Modeand Switching MOSFET-Mode Tests ........................................................................ 603
James Opondo Abuogo (Chemnitz University of Technology, Germany); Christian Schwabe(Technical University of Chemnitz, Germany); Josef Lutz and Thomas Basler (Chemnitz
University of Technology, Germany)
Substantial increase of power cycling capability of SiC MOSFETs after
Preconditioning ...................................................................................................... 611
Carsten Kempiak and Andreas Lindemann (University of Magdeburg, Germany)
Milliseconds Power Cycling (PCmsec) driving bipolar degradation in Silicon
Carbide Power Devices ........................................................................................... 619
Sibasish Laha (Fraunhofer IISB); Jürgen Leib (Fraunhofer-Institut für Integrierte Systeme und
Bauelementetechnologie, Germany); Andreas Schletz (Fraunhofer Institute for Integrated
Systems and Device Technology IISB, Germany); Martin März (Friedrich-Alexander-Universität
Erlangen-Nürnberg, Germany); Christian Liguda, Firas Faisal and Davood Momeni (Nexperia
Germany GmbH, Germany)
Improvement of PC ruggedness by AlN substrate in Easy power modules with
Silicone Carbide technology.................................................................................... 625
Torsten Methfessel and Paul Salmen (Infineon Technologies AG, Germany); Meng-Meng Zhou
(Infineon Technology AG, Germany); Ainhoa Puyadena Mier (Infineon Technologies AG
Germany, Germany)
Impact of the Level of Negative Gate Voltage on the Temperature Measurement
during Power Cycling Testing of SiC MOSFETs ........................................................ 630
Patrick Heimler, Kristiane Reiter and Marco Günther (Chemnitz, University of Technology,
Germany); Josef Lutz and Thomas Basler (Chemnitz University of Technology, Germany)

S04: System and application aspects/S06: Clean switching and EMI
Recycling potential of power electronics solutions - an exemplary study about
on-board chargers .................................................................................................. 637
Christine Minke (Clausthal University of Technology, Germany); Regine Mallwitz (Technische
Universität Braunschweig, Germany); Daiyi Hu (TU Braunschweig, Germany); Paula Burfeind(Clausthal University of Technology, Germany)XIIICIPS 2024

Current Ripple Reduction Approaches in a Heavy Duty Fuel Cell Truck ................... 646
Yavuz Gürlek (Automotive Industry & Daimler Truck AG, Germany); Thomas Basler (Chemnitz
University of Technology, Germany); Martin Ackerl, Simon Sippl, Charlotte Lang, Kristina
Pfeifer and Roland Dold (Automotive Industry and Daimler Truck AG, Germany); Stanislav
Piriienko and Martin Neuburger (Esslingen, Germany)
Time-Domain Simulation Based Multi-Domain Optimization of Gallium
Nitride-Based DC/DC Converters utilizing Spice Models ......................................... 654
Jeremy Nuzzo, Dominik Koch and Michael Bosch (University of Stuttgart, Germany); Tobias
Fink (Universität Stuttgart, Germany); Ingmar Kallfass (University of Stuttgart, Germany)
Switching Behaviour of 3-Level Flying Capacitor GaN Half Bridge on a Multilevel
AMB Substrate with integrated DC-Link Capacitor .................................................. 661
Janusz Wituski and Alexander W. Kleimaier (University of Applied Sciences Landshut,
Germany)
Hyperbolic Segmentation of Gate Driver Output Transistors for a Clean Switchingof 650V GaN HEMTs Half Bridges ............................................................................ 667
Franco Fiori (Politecnico di Torino, Italy); Marcus Nübling and Frank Klotz (Infineon
Technologies, Germany)
Ensuring optimal switching of power MOSFET by compensating Vth variations
using an integrated active gate driver .................................................................... 672
Zhengyang Feng (Toshiba Europe Ltd., United Kingdom (Great Britain)); Manish Kumar andSheng Wang (Cardiff University, United Kingdom (Great Britain)); Shusuke Kawai, Takeshi
Ueno and Hiroaki Ishihara (Toshiba Corporation, Japan); Kohei Onizuka (Toshiba Europe Ltd,
United Kingdom (Great Britain))

Keynote topic 5 - Large-Scale Adoption of Silicon Carbide in the
Automotive Sector: What is Missing?

Chairs: Norbert Seliger (Technische Hochschule Rosenheim, Germany), Eckhard Wolfgang (ECPE e. V.,
Germany)

Large-Scale Adoption of Silicon Carbide in the Automotive Sector:
What is Missing?..................................................................................................... 678
Francesco Iannuzzo (Aalborg Univ, Denmark)Reliability of GaN power chip embedding in different stack up

Chairs: Norbert Seliger (Technische Hochschule Rosenheim, Germany), Eckhard Wolfgang (ECPE e. V.,
Germany)

Reliability of GaN power chip embedding in different stack up ............................... 684
Matthias Hammerl (Vitesco Technologies GmbH, Germany); Alexander Sami (Infineon Technologies AG,
Germany)

D3GaN VM044 transfer molded power module for drive train inverter Design challenges and construction
Chairs: Shiori Idaka (Mitsubishi Electric Europe B. V., Germany), Jürgen H. Wilde (Universität Freiburg IMTEK & Microsystems Engineering, Germany)

Development and testing of GaN Power Modules for EV traction inverters ............. 692
Dima Novo (VisiC Technologies Ltd, Germany)XIVCIPS 2024

Is the Motor Insulation System really affected by high Voltage
Transients?
Chair: Reinhold Bayerer (Germany)Is the Motor Insulation System really affected by high Voltage Transients? .......... 699
Markus Fürst and Mark Bakran (University of Bayreuth, Germany)

S02: Material related issues
Thermal Coupling Assessment for a PCB-based Package with Embedded Chips
and Graphite Heat Spreader ................................................................................... 707
Ahmed Sabry Eltaher Ahmed (Mitsubishi Electric R&D Centre Europe & INSA Lyon, France);
Bahaeddine Ben Hamed (Mitsubishi Electric R&D Centre Europe, Laboratoire Ampère ( INSA
Lyon FRANCE), France); Rémi Perrin, Guillaume Regnat and Guillaume Lefevre (Mitsubishi
Electric R&D Centre Europe, France); Cyril Buttay (Université de Lyon Laboratoire Ampere
CNRS UMR 5005 & Insa de Lyon, France); Jacques Jay (Université de Lyon, France)

S03: Design, modelling and testing of novel technologies
Double-Side Cooled 1.2kV, 300A SiC MOSFET Phase-leg Modules for
200 kW, > 100 kW/L Traction Inverters................................................................. 714
Emmanuel Arriola (De La Salle University, Philippines); Guo-Quan Lu and Zichen Zhang(Virginia Tech, USA); Yuan Gao (Aalborg University, Denmark); Aristotle Ubando (De La Salle
University, Philippines); Dong Dong and Xingchen Zhao (Virginia Tech, USA)

S05: Reliability and availability: Plenar Session Thursday
Power Cycling of Discrete SiC Power MOSFET Packages:
Electro-Thermo-Mechanical Modeling of Bondwires ............................................... 719
Ivana Kovacevic-Badstuebner (Advanced Power Semiconductor Laboratory, ETH Zurich,
Switzerland); Fabian Hirth (Advanced Power Semiconductor Laboratory, Switzerland);Salvatore Race (Advanced Power Semiconductor Laboratory, ETH Zurich, Switzerland); Elena
Mengotti (ABB Corporate Research, Switzerland); Enea Bianda (ABB Corporate ResearchCentre, Switzerland); Joni Jormanainen (ABB Drives Oy, Finland); Ulrike Grossner (Advanced
Power Semiconductor Laboratory, ETH Zurich, Switzerland)
Dynamic calibration: How to properly estimate junction temperature in
SiC MOSFETs subject to body diode voltage shift.................................................... 725
Mostafa Noah, Carlos Fuentes and Filsecker Felipe (ROHM Semiconductor GmbH, Germany)

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