Gate Driver Modules that bring out theperformance of SiC gate drive

Rev B
TAM-GDM-00060

Copyright © 2023

Issued on 1st Jan ‘24 Unit division HQ JapanAll Rights Reserved.

Your One and Only CompanyGate Driver Modules that bring out the performance of SiC gate drive
Index1) Gate Driver Modules that bring out the performance of SiC gate drive
1-1. When, Why, we started development gate drivers
1-2. Application
1-3. Product configuration
1-4. Features of Gate Driver Modules
1-5. Gate drive waveform of SiC power module
1-6. Comparison and expansion
1-7. Line up1-8. Product Line-up (power module correspondence table)～ ROHM / Infineon / Mitsubishi / Wolfspeed ～2) Introduction of One Tamura
Appendix) Contact person

Copyright © 2023

All Rights Reserved.

2

Gate Driver Modules that bring out the performance of SiC gate drive
1-1. Why ??

CircuitdesignTechnology

Transformer
TechnologyEMI/EMC
Solution
Copyright © 2023

All Rights Reserved.

Potting
Technology

MarketAwareness3

Gate Driver Modules that bring out the performance of SiC gate drive
1-1. When ??

2016

2017

2018

2019

2020

2021

2022

2023

2024
For Traction
Infrastructure

IGBT

2LG-C

2EG-C

2DD of2PG/2QG

DC-DC convertor

2LG-C Parallel

2CG-D for IGBT
Mitsubishi (2in1)
FUJI (2in1)

FUJI (2in1)

Infineon (2in1)

Infineon (2in1)

SiC 2DM/2DU
for SiC

2CG-B + 2RB

2DD ofMitsubishi
Mitsubishi (2in1)

2EG-B(LV100(HV))

2CG-B + 2RB

DC-DC convertor
Mitsubishi
ROHM

Copyright © 2023

2CG-B for SiC

All Rights Reserved.

Infineon

ROHM

Wolfspeed(LV100(HV))

4Gate Driver Modules that bring out the performance of SiC gate drive
1-2. Application

Motor Controller

Inverter

PVWindGENERAL-PURPOSE INVERTER

Photovoltaic Power GenerationWind Power Generation

Robotics

Grid/SVG
Electric grid

Copyright © 2023

WeldingUPS

Welding Machine

Uninterruptible Power Supply

All Rights Reserved.

EV Charger
EV StandESS
Energy Storage System5Gate Driver Modules that bring out the performance of SiC gate drive
1-3. Product Configuration

ProductDC/DC Converter

Gate Driver Module

Gate Driver Unit

Function

2in1 PM designated
DC/DC Converter

DC/DC Converter+ Gate drive

Gate Driver Module+ Gate resistors
Protective function

Block diagram

Gatedrive

Gatedrive

Gatedrive

DC/DCConverter

DC/DCConverter

DC/DCConverter

Gatedrive

Gatedrive

Gatedrive

Appearance2DD series
Copyright © 2023

All Rights Reserved.

2CG-B/D series
6Gate Driver Modules that bring out the performance of SiC gate drive
1-4. Features of Gate Driver Modules

Features of All-SiC Power Module
Feature① Short circuit tolerance is lower than Si
Feature② Low threshold voltage VGS (th)（1V~3V)
Feature③ VGS(+) :On resistance does not decrease at 15V
VGS(−) :Low tolerance（Less than −5~4V）

Gate Driver
Modulesolves all
problems!

Feature④ dV/dt can be set highFeature⑤ High frequency operation is possible

Copyright © 2023

All Rights Reserved.

7Gate Driver Modules that bring out the performance of SiC gate drive
1-4. Features of Gate Driver Modules
Feature ① Short circuit tolerance
is lower than Si

Small chip
area

・Wide band gap
・High breakdown voltage
・High temperature operation

Support with a gate driver ･･･ Short-circuit mask time (tsc) adjustment function
SiC power module（1200V 300A）
Waveform with shorted load

IGBT power module (1200V 300A)
Waveform with shorted load
Load：170nH

Load：170nH
VGS : 15V/div

VGE : 15V/div

VDS : 200V/div
VCE : 200V/div

ID : 500A/div

tsc=1.5ust：800ns/div

Optimal value of SiC：1.0~3.0us

Copyright © 2023

Adjustable with external
capacitor capacity

All Rights Reserved.

IC : 500A/div

tsc=5.0us

t：800ns/div

Optimal value of IGBT：3.0~7.0us
8Gate Driver Modules that bring out the performance of SiC gate drive
1-4. Features of Gate Driver Modules
Feature② Low threshold voltage VGS (th)（1V~3V)IGBT is
6V~7V

Beware of malfunctions
from IGBTSupport with a gate driver ･･･Reduction of parasitic capacitance and Miller clamp circuit
Reduction of parasitic capacitanceMiller clamp circuitdV/dt

2DMBxxxxxxCC
VCC

2DD(DC/DC)

No malfunction
at high dV/dtController

DriverTimingcontr olblock

MCLx

DriverCOMx

InoiseInoise＝Cstray X
dV/dt
SiC 1200V / 300A
No malfunctions !
VGSL

VEEVdsVDS

VGSH

No malfunctions

VDS : 200V/div

ID : 100A/div
t : 100ns/div

Copyright © 2023

VOHx
VOLx

All Rights Reserved.

VDS
dV/dt＝15KV/usID

VGSVgs9Gate Driver Modules that bring out the performance of SiC gate drive
1-4. Features of Gate Driver Modules
Feature③ VGS(+) :On resistance does not decrease at 15V
VGS(−) :Low tolerance（Less than −5~4V）

IGBT’s Gate driver cannot
be usedSupport with a gate driver ･･･Constant voltage control of VGS
Input voltage：13V~28V

Output voltage（etc.）：+18V、−3V

repression

VO1+
VO(+)

VIN(+)
VIN+
Step-down
CircuitVINVIN(−)

OVP

Rd

COM1COM

Dz

VO1VO(−)−3V

VO2+
VGS(+)

+18V

OTP

Main
Control

OCP

Rd

COM2COM

Dz

VGS(−)
VO2-Controls the gate voltage to be constant even for input fluctuations
The gate voltage is constant even for output fluctuations(SW frequency, QG of power module)
Copyright © 2023

All Rights Reserved.

+18V

−3V

Improved SiC reliability
Low loss operation

10Gate Driver Modules that bring out the performance of SiC gate drive
1-4. Features of Gate Driver Modules
Feature④ dV/dt can be set highTurn-on: Recovery current is small
Turn-off: No tail current

Support with a gate driver ･･･Ability to suppress surge voltage with high dV/dt(Soft turn-off, Active clamp）

Soft turn-off

Active clamp (Option)

2DMBxxxxxxCC
DESATx
VOHx
VOLx
STOx

Soft turn-off
Operates whenshort-circuited

DESATxVOHxVOLxSTOxCOMx

ACLx
COMx
Active Clamp gate

Surge voltage
suppression

VGSVgeSurge voltage
suppression

VCEVGE

ICCopyright © 2023

All Rights Reserved.

Surge clamp

VDSVceIDIc

11

Gate Driver Modules that bring out the performance of SiC gate drive
1-4. Features of Gate Driver Modules
Feature⑤ High frequency operation is possible

Drive power needs to be increased

Support with a gate driver ･･･Output capacity considering SiC power module
Frequency （KHz）

220
200

ID=120A

180

1200V
120A

160

ID=604A

140
VDS=1080V

120
1200V
600A

100
80
6040

Gate driver derating curve

20001SiC

Copyright © 2023

2341200V
300A
All Rights Reserved.

56789IGBT

1011121314 15QG（uC）
1700V
1800A

12Gate Driver Modules that bring out the performance of SiC gate drive
SiC MOSFET： FF3MR12KM1

1-5. Gate drive waveform of SiC power module (2 Pulse test)
DC Link：600V,

Ron : 4.3Ω, Roff : 3.6Ω,

2CG010BBC15N+ Evaluation board
Gate Driver

CN301

0 5V

C101-116 : 560uF(Ls : 60nH)
C117 : 1uF(Ls : 20nH)

Power module

CH/DH2,4 VIN(-)

0V

Highly stable gate drive withproprietary drive circuit and miller
clamp circuit (patent pending)Tj=25℃

Id

1,3 VIN(+)
15V

Upper arm,

5,7 VCC
6,8 GND
9 ALM210 GND
11 INB
12 GND
13 ALM114 GND
15 INA
16 GND17 MOD
18 GND
19 RTC
20 GND

VgeH : 10V/div
Vds

GH

VgeL : 10V/div

VgsH
EH/SH

C103 C102 C101

C116 C115 C114

C117

VCC

・・・・・・・・・

Vds : 250V/div
GLVgsL

L101

EL/SL

Id : 200A/divt : 4us/div

Turn OFF / Ic =375A

Turn OFF / Ic =750A

Turn ON / Ic =375A
VgeH : 10V/div

VgeH : 10V/div

VgeL : 10V/div

VgeH : 10V/div
VgeL : 10V/div

VgeL : 10V/div
Vds : 250V/div

Vds : 250V/div
Id : 200A/div

Id : 200A/div

Item
Vdsp
dV/dt
di/dt
Eoff

Copyright © 2023

Measurement
value
866
V
8.8
kV/us
6.2
kA/us
13mJ

t : 100ns/div

All Rights Reserved.

Vds : 250V/div

Item
dV/dt
di/dt
Eon

Measurement
value
4.6
kV/us
5.0
kA/us
19mJ

t : 100ns/div

Id : 200A/div

Item
Vdsp
dV/dt
di/dt
Eoff

Measurement
value
992
V9.2kV/us
10.3
kA/us
33mJ

t : 100ns/div

13

Gate Driver Modules that bring out the performance of SiC gate drive
1-5. 2 Pulse test (Enlarged waveform)
SW side gate (turn ON)
No ringing and no overshoot

SiC MOSFET： FF3MR12KM1

Turn ON / Ic =375A
VgeH : 10V/div
VgeL : 10V/div

OFF side gate
Stable L state without malfunction
Id : 200A/div
Vds : 250V/divt : 100ns/div

Turn OFF / Ic =750A

VgeH : 10V/div
VgeL : 10V/div

OFF side gate
Stable L state without malfunction
Vds : 250V/div

Id : 100A/div
t : 100ns/div

Copyright © 2023

All Rights Reserved.

14Gate Driver Modules that bring out the performance of SiC gate drive
1-5. Gate drive waveform of SiC power module (Short circuit test)
DC Link：600V,

Ron : 4.3Ω, Roff : 3.6Ω,Driver
2CG010BBC15N+Gate
Evaluation
board

Lower arm,

Tj=25℃

Power module

CN301
1,3 VIN(+)
15V

CH/DH
2,4 VIN(-)

0 5V

0V

5,7 VCC
6,8 GND
9 ALM210 GND
11 INB
12 GND
13 ALM1
14 GND
15 INA
16 GND17 MOD
18 GND
19 RTC
20 GND

GHL101
VgsH

EH/SH

C117

C103 C102 C101

C116 C115 C114
・・・・・・・・・

Vds

SiC MOSFET： FF3MR12KM1VCC

This driver suppresses the Vds
peak voltage in the shortcircuit by our original circuit
technology, and can control
the mask time to prevent false
short circuit detection.
(Patent pending)

GL
VgsL

C101-116 : 560uF(Ls : 60nH)
C117 : 1uF(Ls : 20nH)

EL/SL

Id

SW side gate (turn ON)
No ringing and no overshoot

Item
Vdsp
Idp
tsc

Measurement
value
806
V4124
A2.28
us

Item
Vdsp
Idp
tsc

Measurement
value806
V4124
A2.28
us

VgeL : 10V/div
VgeH : 10V/div

OFF side gate
Stable L state without malfunction

Constant control of mask time toprevent false short circuit detection
regardless of short circuit conditions

Vds
ソフトターンオフ動作によりpeak reduction withsoft
Vceturn-off
peak を低減
function

Vds : 250V/div

Id : 1kA/div

Copyright © 2023

All Rights Reserved.

t : 1us/div

15

Gate Driver Modules that bring out the performance of SiC gate drive
1-6. Comparison and expansion

Advantage of Tamura Gate driver modules (2CG-B / 2CG-D)
ItemTAMURA

Company A (4W)

Advantages

Power module

SiC-MOSFET
/IGBT

IGBT

〇

Input Voltage

13.5-26.4V

14.5-15.5V〇+15V/-10V〇+15V/-10V+15V/-15V+18V/-4V+18V/-2V+15V/-4V

Output Voltage

Copyright © 2023

Peak output current

±43A

±35A

〇

Frequency

150kHz (Max)

100kHz (Max)〇Isolation capacitance

12pF(TYP)

22pF

〇

CMTI

70kV/us50kV/us〇Protection

Soft turn off
Active Clamp
Miller Clamp

Active Clamp〇

All Rights Reserved.

16

Gate Driver Modules that bring out the performance of SiC gate drive
1-6. Comparison and expansion

Deployment example of Tamura Gate driver modules (2CG-B / 2CG-D)

Gatedrive

DC/DCConverter

Gatedrive

Gate Driver Module

Copyright © 2023

All Rights Reserved.

17

Gate Driver Modules that bring out the performance of SiC gate drive
1-6. Comparison and expansion

Deployment example of Tamura Gate driver modules (2CG-B / 2CG-D)

AC Output

DC Input
EV Charger(DC-AC section)

Copyright © 2023

All Rights Reserved.

18

Gate Driver Modules that bring out the performance of SiC gate drive
1-7. Product Line-up
Gate Driver Module 2CG-B / 2CB-D series
MODELOutput

InputInsulation

2CG010BBC11N

2CG010BBC12N

2CG010BBC13N

2CG010BBC14N

2CG010BBC15N

2CG010DBC11N

Output voltage(+)

+15V

+15V

+18V

+18V

+15V

+15V

Output voltage(-)

-10V

-15V

-4V

-2V-4V-10V

Output power/1ch

4.0W

3.3W

3.5W

3.2W

3.0W

4.0W

Number of output

2

Peak output current±43A

Input voltage

DC13~28V

Logic input voltage

DC3.3V, 5V

Withstand voltage

Primary to secondary AC5KV / Secondary to secondary AC4KVPartial discharge
extinction voltage

2400V peak or more
Direct mode / Half bridge modeMode selectFunction

Copyright © 2023

DESAT protection

Yes

Soft turn off

Yes

Active clamp

NoYes

Miller clamp

Yes

NoAll Rights Reserved.

19

Gate Driver Modules that bring out the performance of SiC gate drive
1-7. Product Line-up (power module correspondence table) / ROHM
PackageIc

Part No

Gate Driver Unit

Gate Driver Module

2EG-B

2CG-B

DC-DC

2DD

Vce = 1200V

C typeE typeG type80

BSM080D12P2C008-120

BSM120D12P2C005-180

BSM180D12P3C007-180

BSM180D12P2E002

2EG01XBxN13N

300

BSM300D12P2E001

2EG01XBxN13N

300

BSM300D12P3E005

400

2CG010BBC13N

2DD180407C

2CG010BBC14N

2DD180206C

2CG010BBC13N

2DD180407C

2EG01XBxN14N

2CG010BBC14N

2DD180206C

BSM400D12P2G003

2EG01XBxN13N

2CG010BBC13N

2DD180407C

400

BSM400D12P3G002

2EG01XBxN14N
2CG010BBC14N

2DD180206C

600

BSM600D12P3G001

2EG01XBxN14N

2CG010BBC13N

2DD180407C

Vce = 1700V

250

BSM250D17P2E004

2EG01XBxN13N

E typex: Signal input voltage selectable “ C ” => 3.3~15V “ D ” => 15V

Copyright © 2023

All Rights Reserved.

20Gate Driver Modules that bring out the performance of SiC gate drive
1-7. Product Line-up (power module correspondence table) / Infineon
PackageID

TAMURA DriverPart No

Evaluation board

2CG-B

2DD

2CG010BBC15N(+15/-4V)

2DD1504xxC(+15V/-4V)

2CG010BBC13N(+18/-4V)

2DD180407C(+18V/-4V)

VD-S = 1200V
250
375500FF6MR12KM1
FF6MR12KM1P
FF3MR12KM1
FF3MR12KM1P
FF2MR12KM1
FF2MR12KM1P

2RB020BB

VD-S = 2000V
250
375500FF6MR20KM1H
FF6MR20KM1HP
FF4MR20KM1H
FF4MR20KM1HP
FF3MR20KM1H
FF3MR20KM1HP

2RB020BB

Gatedrive
DC-DCconverter

Gate Driver Module(2CG-B series)
Copyright © 2023

Gatedrive
All Rights Reserved.

Evaluation board(2RB series)

Can be connected directly !
21Gate Driver Modules that bring out the performance of SiC gate drive
1-7. Product Line-up (power module correspondence table) / Mitsubishi ElectricID

*2300
400
600
800
1200

Part No
FMF300BXZ-24B
FMF400BX-24B
FMF400BXZ-24B
FMF400DY-24B
FMF600DXZ-24B
FMF800DX-24B
FMF800DXZ-24B
FMF1200DXZ-24B

Evaluation board
VDS=1200V
*1 *4
*2
*1 *4
Can be connected directly*3 *4*2

Gate Driver Module

DC-DC

2CG010BBC11N
2CG010BBC12N
2CG010DBC11N

2DD151008C
2DD151507C*3 *4
VDS=1700V

300

FMF300DXZ-34B*3 *4

2CG010BBC11N
2CG010BBC12N
2CG010DBC11N

2DD151008C
2DD151507C*1: It is necessary to branch the lead wire of the gate signal from the evaluation board.
*2: A connection board with the SiC power module is required.
*3: A lead wire with a connector is required.
*4: SC terminal is not supported. However, we can propose external circuit for SC terminal.

Gatedrive
DC-DCconverter

Can be connected directly !

Gatedrive
Gate Driver ModuleCopyright © 2023

All Rights Reserved.

Evaluation board
2RB020BB

22Gate Driver Modules that bring out the performance of SiC gate drive
1-7. Product Line-up (power module correspondence table) / WolfspeedPackage

ID

TAMURA DriverPart No

Evaluation board

2CG-B

2DD

2CG010BBC15N(+15/-4V)

2DD1504xxC(+15V/-4V)

2CG010BBC15N(+15/-4V)

2DD1504xxC(+15V/-4V)

VD-S = 1200V
120
175
300
350
530

CAS120M12BM2
CAS175M12BM3
CAS300M12BM2
CAS350M12BM3
CAS530M12BM3
CAB530M12BM3

2RB020BB

VD-S = 1700V
225

CAS300M17BM2

2RB020BB

GatedriveDC-DCconverter

Gate Driver Module(2CG-B series)
Copyright © 2021

Gatedrive
All Rights Reserved.

Evaluation board(2RB series)

Can be connected directly !
23

Gate Driver Modules that bring out the performance of SiC gate drive
Index1) Gate Driver Modules that bring out the performance of SiC gate drive
1-1. When, Why, we started development gate drivers
1-2. Application
1-3. Product configuration
1-4. Features of Gate Driver Modules
1-5. Gate drive waveform of SiC power module
1-6. Comparison and expansion
1-7. Line up
1-8. Product Line-up (power module correspondence table)～ ROHM / Infineon / Mitsubishi / Wolfspeed ～2) Introduction of One TamuraAppendix) Contact person

Copyright © 2023

All Rights Reserved.

24Introduction of One Tamura (General application)
Gate driver
Device technology

Circuit technology

Module technology
Current sensor

Ga2O3
Gate Driver Unit
Novel Crystal Technology, Inc.

Soldering technology
Electric Chemicals
Soldering material
Die attach material
TIM material

Power electronics technology
and main products

Reactor Trans Coil
Large reactor/
transformer

Reflow soldering system

Automotive reactor
Reactor for PF（2 in 1）

Copyright © 2023

Passive componentsAll Rights Reserved.

Toroidal coil

SW-Trans25

Please visit our website!

HomeContact

Catalog

LinkedinDigi-Key

MouserCORPORATE GOVERNANCE REPORT
Tamura’s mascot “Quenu”

Copyright © 2023

All Rights Reserved.

26