Home > Press Releases > Press Release #1126 > Appendix 1

Appendix 1

V4-Japan Collaborative Research Projects

Project title

Country ResearcherPoland

New Generationof InGaN Layers,
Quantum Wells
and Wires Grown
on Vicinal GaN
Substrates forJapan

Position andInstitution

Head of Epitaxy Lab
Polish Academy ofMikeSciences, Institute ofLeszczynski
High Pressure
Physics

Abstract ofResearch Project
The project has agoal to develop a
new generation ofInGaN layers,
quantum wells andwires which will
have smaller defectdensity than thepresent state-ofthe-art. The
applications include
next generation
optoelectronics andphotovoltaic
devices. We aregoing to achieve
this aim by control
of In-segregationand mismatch
defect formation.
The control will bedone using Unipress
proprietary andpatented technology
for lateralpatterning.

Hiroshi

Professor
Nagoya University,

At Nagoya
University, bysequentiallyswitching-on and off indium
precursors for

Amano

Director of Akasaki

nanorod growth andOptoelectronics
andPhotovoltaics

Research Center

Czech

Czech

Professor
Charles University inHoly Vaclav Prague, Departmentof Condensed Matter
Physics

Professor
Charles University in
Jan Valenta Prague, Faculty ofMathematics andPhysics

unique raisedpressure MOVPEsystem, we will growepi-structures with
In-variable not onlyin vertical, but also
horizontal
directions. The
structures will be
examined especiallyusing High
Resolution X-ray
Diffraction atCharles University.
We are going todevelop new XRD
methods, in which
we will include Xray photon
coherence,
anomalous X-ray
diffraction andinterpretation not
only of all peak
positions, but also
their intensities andthe intensity ofdiffuse scattering
between thediffraction maxima.

The aim of theproject is to develop
new functional
composite materials
consisting of silicon
nanocrystals andmetalnanostructures. The
goal is todemonstrate thepotential of thesematerials inMinoru Fujii

Professor
Kobe University,
Graduate School ofEngineering

Nanophotonics
with Metal –Group-IVSemiconductor
Nanocomposites:
Hungary Ádám Gali
from Single
Nanoobjects toFunctional
Ensembles

Research adviser,
Research groupleader,Hungarian Academyof Sciences,Wigner
Research Centre forPhysics

Slovakia Ivan Štich

Chief scientist
Slovak Academy ofSciences,Institute ofPhysicsJapan

Polandelectronic devices
and in biologicalapplications.

Romuald
Bartłomiej

Professor
Warsaw University ofTechnology, Institute

The Japanese teamis responsible forthe development of
nanocompositematerials. The
Czech team has twoaims. The first one
is to study theluminescence
properties in single
nanoobject
spectroscopy. The
other aim is tostudy thecytotoxicity anddemonstrate thepotential as
fluorescence probes
for bioimaging. The
Hungarian and
Slovakian teams
perform theoreticalresearch on
nanocrystals andnanocomposites bydifferentapproaches. The
Polish team is
responsible formodeling andfabrication of
nanocrystal-based
electronic devices.
Through thecollaboration ofthese five teams,
new silicon-based
environmentallyfriendly
nanocomposite

Beckof Microelectronics

materials can beand Optoelectronics

Japan

Slovakia

StructureFunction
Relationship ofAdvanced
Nanooxides forEnergy Storage
Devices

Czech

PolandHisao
Suzuki

Professor
Shizuoka University
Research Institute ofElectronics

VladimírŠepelák

Professor
Slovak Academy ofSciences, Institute of
Geotechnics

Ladislav
Kavan

Dariusz
Oleszakproduced and theirpotentials indifferent fields
demonstrated.
The project aims at
developing
advanced all-solid
type secondary
batteries byinvestigating therelationship among
powder properties,
nanostructures ofsintered ceramics
and thin films, andtheirelectrochemicalproperties.

The Japanese teamestablishes a basic
plan and optimizes
processes for thecathode, anode andsolid electrolyte,
and evaluates theresulting secondary
Professor
batteries. TheJ. Heyrovsky Institute
Slovak teamof Physicalanalyzes theChemistry,
nanostructures ofDepartment ofpowders, sintered
Electrochemicalceramics and thin
Materials
films. The Polishteam prepares
nanopowders forelecrodes and solid
electrolyte, andoptimizes thespark-plasma
sintering. The
Associate Professor
Czech teamWarsaw University ofevaluates theTechnology, Facultyelectrochemicalof Materials Scienceand EngineeringSlovakia Jan Kuzmik

Japan

Highly Safe GaN
Metal-OxideSemiconductor
Transistor
SwitchPoland

Head of Department,
Slovak Academy ofSciences,Institute ofElectrical Engineering

Tamotsu
Hashizume

Professor
Hokkaido University,
Research Center for
Integrated Quantum
Electronics

Boguslawa
Adamowicz

Associate Professor
Head of Department
Silesian University ofTechnology, Instituteof Physics

properties ofnanopowders andthe resultant
secondary batteries.

By controllinginterface states in
MOS gatestructures, theproject will greatly
improve theoperation stabilityof GaN MOS highelectron mobility
transistors(HEMTs).
Specifically, theJapanese team will
characterize MOS
interface properties
using acapacitance-voltage
method with widerange frequencies athigh temperatures,and then develop aninterface control
technology. The
Polish andHungarian teams willaddress the analysis
of interface defectlevels by a rigorous
numerical simulationand the structural
analysis of MOS
interfaces by atransmission
electronmicroscope,respectively.
Furthermore, theSlovakian team will

fabricate andcharacterize GaN
MOS-HEMTs basedon an interface
defect control
process and a novel
device structure.

Hungary Lajos Tóth

PolandAndrij
MileninSenior ResearchFellow
Hungarian Academyof Sciences, Centrefor Energy Research,Institute for TechnicalPhysics and Materials
Science (MFA)

Professor
AGH University ofScience andTechnology

In this project, thecomplementary andfunctional
collaboration willdevelop novel
device technologies
combined withinterface control
schemes, resulting
in the GaN MOSHEMT with highoperation stability
for next-generation
power invertersystems.
The project aims todevelop a multiscale model of thelaser dielessdrawing process forhardly deformablemagnesium alloys,
and to fabricate
magnesium alloy
small tubes withhigh strength andductility.
The Japanese sideconducts
experiments of laser
dieless drawing forhardly deformablemagnesium alloytubes. The Polishside develops a
multi-scale modelMulti Scale
Model of theLaser DielessJapan
Drawing Processof Tubes from
HardlyDeformable
Magnesium
AlloysCzech

Tsuyoshi
FurushimaJiříNěmeček

considering coupledheat anddeformation analysis
at macro-scale, andevolution ofAssistant Professor
microstructure andTokyo Metropolitan
University,Department surface roughness
at the micro-scaleof Mechanicalof the laser dielessEngineeringdrawing. The Czech
side conducts
experimental
observation ofevolution of
microstructure andsurface roughness
at micro-scale.

Associate Professor
Czech Technical
University in Prague,
Faculty of Civil
Engineering- Back This page updated on Aug. 31, 2015
Copyright©2015 Japan Science and Technology Agency.

Through thiscollaborative work,
we optimize various
forming factors froma cross sectional
viewpoint frommicro to macroscales in the laser
dieless drawing
process. By using
this method, we
fabricate magnesium
alloy small tubes
with high strengthand ductility, andapply them to lightweight structures in
automobile andbioabsorbablematerials.

www-admin@tokyo.jst.go.jp

JST, an integrated organization of science and technology in Japan, establishes an infrastructure
for the entire process from the creation of knowledge to the return to the society. For more
information, visit http://www.jst.go.jp/EN/