FY2019

テラヘルツ量子素子研究チーム ／ Terahertz Quantum Device Research Team
（１）原著論文（accept を含む） ／ Original Papers
1.

M. A. Khan, R. Takeda, Y. Yamada, N. Maeda, M. Jo, and H. Hirayama, “Beyond 53%
internal quantum efficiency in a AlGaN quantum well at 326 nm UVA emission and singlepeak operation of UVA LED” , Optics Letters, Vol. 45, No. 2, pp. 495-498, January 15,(2020). (10.1364/OL.376894).

2.

M. A. Khan, E. Matsuura, Y. Kashima and H. Hirayama, “Overcoming the current injection
issue in the 310 nm band AlGaN UVB light-emitting diode” , Japanese Journal of Applied
Physics, Vol. 59, No. SA, pp. SAAD01-7, January 1, (2020).(10.7567/1347-4065/ab460b)

3.

J. Yun, D. P. Han, and H. Hirayama, “Random electric field induced by interface roughness
in GaN/AlxGa1-xN multiple quantum wells” , Applied Physics Express, Vol. 12, No. 12, pp.
124005-1-6, November 21, (2019). (10.7567/1882-0786/ab548a).

4.

M. A. Khan, E. Matsuura, Y. Kashima, and H. Hirayama, “Influence of undoped-AlGaN
final barrier of MQWs on the performance of lateral-type UVB LEDs” , Physica Status Solidi
A, Vol. 216, No. 18, p. 1900185, September 18, (2019). (10.1002/pssa.201970059)

5.

L. Wang, T. T. Lin, K. Wang, and H. Hirayama, “Parasitic transport paths in two-wellscattering-assisted terahertz quantum cascade lasers” , Applied Physics Express, Vol. 12, No.
8, pp. 082003-1-5, July 9, (2019). (10.7567/1882-0786/ab2b56)

6.

L. Wang, T. T. Lin, K. Wang, T. Grange, S. Birner and H. Hirayama, “Short-period
scattering-assisted terahertz quantum cascade lasers operating at high temperatures” ,Scientific Reports, Vol. 9, No. 9446, July 1, (2019). (10.1038/s41598-019-45957-8)

7.

M. I. Hossain, Y. Itokazu, S. Kuwaba, N. Kamata, N. Maeda, and H. Hirayama,“Nonradiative recombination centers in deep UV-wavelength AlGaN quantum wells detectedby below-gap excitation light” , Japanese Journal of Applied Physics, Vol. 58, No. SC, pp.
SCCB37-1-7, May 29, (2019). (10.7567/1347-4065/ab1069)

8.

Y. Itokazu, S. Kuwaba, M. Jo, N. Kamata, and H. Hirayama, “Influence of the nucleation
conditions on the quality of AlN layers with hightemperature annealing and regrowth
processes” , Japanese Journal of Applied Physics, Vol. 58, No. SC, pp. SC1056-1-5, May 28,(2019). (10.7567/1347-4065/ab1126)

9.

M. Jo, Y. Itokazu, S. Kuwaba, and H. Hirayama, “Controlled crystal orientations ofsemipolar AlN grown on an m-plane sapphire by MOCVD” , Japanese Journal of Applied
Physics, Vol. 58, No. SC, pp. SC1031-3, May 17, (2019). (10.7567/1347-4065/ab0f1c)

10.

Y. Mogami, S. Motegi, A. Osawa, K. Osaki, Y. Tanioka. A. Maeoka, M. Jo, N. Maeda, H.
Yaguchi, and H. Hirayama, “Evolution of morphology and crystalline quality of DCsputtered AlN films with high-temperature annealing” , Japanese Journal of Applied

FY2019

Physics, Vol. 58, No. SC, pp. SC1029-1-4, May 17, (2019). (10.7567/1347-4065/ab1066)
11. 平山秀樹，前田哲利，M. A. Khan，只友一行，岡田成仁，山田陽一：“AlGaN 深紫
外LD の実現へ向けた最近の進展”，レーザー研究，第47 巻，第4 号，pp. 196203，4 月20 日, (2019). (ISSN 0387-0200)（２）著書・解説など／ Book Editions, Review Papers
1. 平山秀樹：“AlGaN 深紫外LED の最近の進展”，Photonics Division フォトニク
スニュース（応用物理学会フォトニクス分科会出版），第5 巻，第3 号，pp.
133-138，9 月10 日, (2019). ISSN: 2189-6496
https://annex.jsap.or.jp/photonics/publication/latest
2. 平山秀樹：“殺菌用・深紫外LED の最近の進展”，クリーンテクノロジー（日本工業出版），第29 巻，第4 号，pp. 1-5，4 月10 日, (2019). ISSN: 0917-1819
https://www.nikko-pb.co.jp/products/detail.php?product_id=4550（３）招待講演 ／ Invited Talks
1. M. Jo, N. Maeda and H. Hirayama, “Progress in AlGaN UVC LEDs by improving light
extraction efficiency” , SPIE Photonics West, The Moscone Center, San Francisco, USA,
February 6, (2020).
2. A. Khan, N. Maeda, M. Jo, Y. Kashima and H. Hirayama, “High performances of AlGaNbased UVC and UVB LEDs with relaxed buffer layer as well as using p-type graded multiquantum-barrier electron-blocking layer” , SPIE Photonics West, The Moscone Center,San
Francisco, USA, February 6, (2020).
3. K. Matsumoto, Y. Tomita, A. Mishima, Y. Yamaoka, S. Koseki, Y. Yano, H. Miyake and H.
Hirayama, “Challenge and opportunity for mass production of UVC LED by MOVPE onhigh temperature annealed AlN template” , Material Research Meeting 2019, Yokohama
Symposia, December 11, (2019).
4. 【Keynote】H. Hirayama, “Problems and latest achievements in AlGaN-based deep-UV
LEDs” , 4th International Workshop on Ultraviolet Materials and Devices (IWUMD4), SaintPetersburg, Russia, September 10, (2019).
5. H. Hirayama, N. Maeda and M. Jo, “Recent progress of high-efficiency AlGaN deep-UV
LEDs” , SPIE Optics + Photonics, San Diego, USA, August 11, (2019).
6. T. G. Kim, T. H. Lee, H. Hirayama, T. H. Park, K. R. Son, “Simultaneous improvements in
EQE and WPE of AlGaN UV-C LEDs with Ni:AlN/Al Ohmic reflectors” , UV and Higher
Energy Photonics: From Materials to Applications, SPIE Optics + Photonics, San Diego,
USA, August 11, (2019).
7. H. Hirayama, “Recent progress and future prospects of AlGaN deep-UV LEDs” , 48th

FY2019

International School & Conference on the Physics of Semiconductors (Jaszowiec 2019),
Szczyrk, Poland, June 11, (2019).
8. H. Hirayama, Y. Kashima, Y. Watanabe, T. Shibata, N. Maeda, M. Jo, E. Matsuura, T. Iwai,
M. Kokubo, T. Tashiro, K. Furuta, R. Kamimura, Y. Osada, H. Takagi, Y. Kurashima, Y.
Iwaisako and T. Nagano, “LEE enhancement in AlGaN UVC LED using photonic crystal
reflector” , 13th International Conference on Nitride Semiconductors (ICNS-13), HyattRegency Bellevue, Bellevue, Washington, July 8, (2019).
9. 平山秀樹，林宗澤，王科，王利：“GaAs 系およびGaN 系テラヘルツ量子カスケー
ドレーザーの進展”，レーザー学会学術講演会第40 回年次大会講演会，仙台国際センター，1 月21 日, (2020).
10. 定昌史，平山秀樹，“深紫外LED の開発最前線”，モノづくりフェア2019，マンメッセ福岡，10 月18 日, (2019).
11. 平山秀樹：“AlGaN 系深紫外LED の最近の進展”，徳島大学ポストLED フォトニ
クス研究所開所記念式典，キックオフセミナー，徳島大学常三島キャンパス，10
月16 日, (2019).
12. K. Wang, L. Wang, T. T. Lin, K. Fukuda and H. Hirayama, “Recent progress and future of
GaN and GaAs-based THz-QCL” , 第80 回応用物理学会秋季学術講演会，北海道大学，9 月18 日, (2019).
13. 平山秀樹，“深紫外LED の国内外の最新技術と今後の展望”，特許庁技術研修，
特許庁六本木仮庁舎，5 月29 日, (2019).
14. 平山秀樹：“殺菌用紫外LED の開発と今後の展望”，OPIE’ 19 紫外線応用技術
セミナー，パシフィコ横浜アネックスホール，4 月26 日, (2019).

（４）会議、シンポジウム、セミナー主催 ／ Meeting, Symposiums and Seminars
1. M. A. Khan, N. Maeda, M. Jo, E. Matsuura, Y. Kashima, Y. Yamada, H. Hirayama, “AlGaNUVB LEDs at 310nm emission with high efficiency and light power using partially relaxedn-AlGaN buffer layer” , ISPlasma2020/IC-PLANTS2020, Nagoya University, March 11,(2020).
2. K. Wang, T. T. Lin, L. Wang and H. Hirayama, “Recent progress in GaAs THz-QCLs andtowards realizing GaN based QCLs” , SPIE Photonics West, The Moscone Center, San
Francisco, USA, February 6, (2020).
3. K. Wang, L. Wang, T. T. Lin, K. Fukuda, R. Zhang, and H. Hirayama, “Simulation andgrowth of GaN/AlGaN based terahertz quantum cascade structures” , The 9th Asia-PacificWorkshop on Widegap Semiconductors (APWS2019), OIST, Onna-son, Japan, November
13, (2019).
4.

H. Murotani, H. Miyoshi, R. Takeda, M. A. Khan, N. Maeda, M. Jo, H. Hirayama, and Y.

FY2019

Yamada, “Radiative and nonradiative recombination rates of excitons and their effects on
internal quantum efficiency of AlGaN-based UV-B MQWs” , The 9th Asia-PacificWorkshop on Widegap Semiconductors (APWS2019), OIST, Onna-son, Japan, November
13, (2019).
5.

M. A. Khan, N. Maeda, M. Jo, S. Fujikawa, Y. Yamada, and H. Hirayama, “42mW light
power from AlGaN-based 302nm-band UVB LEDs: a way forward for UVB LDs” , The
9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), OIST, Onna-son,
Japan, November 12, (2019).

6.

M.A. Khan, R. Takeda, H. Miyoshi, Y. Yamada, S. Fujikawa, N. Maeda, M. Jo and H.
Hirayama, “Achievement of internal quantum efficiency up to 53% at 326nm-UVA
emission from AlGaN QWs with engineering of highly relaxed buffer layer” , 4thInternational Workshop on Ultraviolet Materials and Devices (IWUMD4), SaintPetersburg, Russia, September 13, (2019).

7.

K. Wang, N. Maeda, M. A. Khan, Z. Li, Y. Wu, T. Tao, B. Liu, R. Zhang and H.
Hirayama, “MBE grown p-type AlGaN and deep ultraviolet light emitting diodes” , 4thInternational Workshop on Ultraviolet Materials and Devices (IWUMD4), SaintPetersburg, Russia,September 12, (2019).

8.

M. A. Khan, N. Maeda, M. Jo, S. Fujikawa, E. Matsuura, Y. Kashima, Y. Yamada and H.
Hirayama, “Realization of high light output power in AlGaN-based UVB LED at 310±2nm
emission using highly relaxed (50%) n-AlGaN electron injection layer” , 13th International
Conference on Nitride Semiconductors (ICNS-13), Hyatt Regency Bellevue, Bellevue,
Washington, July 10, (2019).

9.

M. A. Khan and H, Hirayama, “Current status and future directions of high power AlGaNbased UVB LEDs with emission of 280nm-320nm” , 13th International Conference on
Nitride Semiconductors (ICNS-13), Hyatt Regency Bellevue, Bellevue, Washington, July
10, (2019).

10. H. Murotani, K. Hisanaga, R. Tanabe, A. Hamada, N. Maeda, M. Jo, H. Hirayama and Y.
Yamada, “Optically pumped stimulated emission from AlGaN-based UV-C multiple
quantum wells with high internal quantum efficiency of 16 % at 750 K” , 13th International
Conference on Nitride Semiconductors (ICNS-13), Hyatt Regency Bellevue, Bellevue,
Washington, July 9, (2019).
11. H. Murotani, H. Miyoshi, R. Takeda, M. A. Khan, N. Maeda, M. Jo, H. Hirayama and Y.
Yamada, “Role of exciton recombination processes on internal quantum efficiency in
AlGaN-based UV-B multiple quantum wells” , 13th International Conference on Nitride
Semiconductors (ICNS-13), Hyatt Regency Bellevue, Bellevue, Washington, July 9,(2019).

FY2019

12. N. Okada, F. Kim, T. Saito, S. Fujikawa, N. Maeda, H. Hirayama and K. Tadatomo,“Epitaxial lateral overgrowth of AlN with partially non-dislocation-region on vicinal AlN
template” , 13th International Conference on Nitride Semiconductors (ICNS-13), HyattRegency Bellevue, Bellevue, Washington, July 9, (2019).
13. M. A. Khan, N. Maeda, M. Jo, Y. Yamada and H. Hirayama, “Current challenges andfuture direction for AlGaN based UV-B LEDs grown by LP-MOVPE” , European
Materials Research Society Spring Meeting 2019 (E-MRS), Acropolis Congress Center,
Nice, France, May 31, (2019).
14. E. Hase, T. Yasui, H. Hirayama and K. Nagamatsu, “The improving resolution for
dislocation analysis in GaN by three-photon microscopy” , SPIE Photonics West, The
Moscone Center, San Francisco, USA, February 5, (2020).
15. Y. Tomita, A. Mishima, Y. Yamaoka, T. Arimura, S. Koseki, Y. Yano, K. Matsumoto, and
H. Hirayama, “Optimization of p-cladding layer for improvement of deep ultraviolet lightemitting diode performance” , The 9th Asia-Pacific Workshop on Widegap
Semiconductors (APWS2019), OIST, Onna-son, Japan, November 14, (2019).
16. Y. Itokazu, S. Kuwaba, M. Jo, N. Kamata, and H. Hirayama, “Investigation of AlGaN/AlN
interface structure and annealing effect for control of strain re- laxation” , The 9th AsiaPacific Workshop on Widegap Semiconductors (APWS2019), OIST, Onna-son,
Japan,November 14, (2019).
17. Y. Mogami, A. Osawa, K. Osaki, Y. Tanioka, A. Maeoka, Y. Itokazu, S. Kuwaba, M. Jo,
N. Maeda, H. Yaguchi, and H. Hirayama, “Fabrication of UVC AlGaN LEDs on DCsputtered AlN templates with high-temperature an- nealing” , The 9th Asia-PacificWorkshop on Widegap Semiconductors (APWS2019), OIST, Onna-son, Japan, November
11, (2019).
18. M. I. Hossain, Y. Itokazu, S. Kuwaba, N. Kamata, N. Maeda, and H. Hirayama,“Nonradiative recombination centers in UVB AlGaN quantum well and their temperaturedependence revealed by below-gap excitation light” , The 9th Asia-Pacific Workshop on
Widegap Semiconductors (APWS2019), OIST, Onna-son, Japan, November 11, (2019).
19. J. Yun and H. Hirayama, “Influence of dipole scattering to level broadening and carriertransport in AlGaN-based superlattice structures” , The 9th Asia-Pacific Workshop on
Widegap Semiconductors (APWS2019), OIST, Onna-son, Japan, November 11, (2019).
20. J. Yun and H. Hirayama, “Level broadening by dipole scattering in AlGaN/ AlGaN
superlattice structures” , Infrared Terahertz Quantum Workshop (ITQW 2019), Ojai, USA,
September 17, (2019).
21. L. Wang, T. T. Lin, K. Wang, T. Grange and H. Hirayama, “Experimental and theoretical
study of piezoelectric polarization in GaN/AlGaN terahertz quantum cascade lasers” ,FY2019

Infrared Terahertz Quantum Workshop (ITQW 2019), Ojai, USA, September 17, (2019).
22. T. T. Ln, K. Wang, L. Wang and H. Hirayama, “Optimization of THz QCLs by suppressing
A leakage current via high energy states” ,44th International Conference on Infrared,
Millimeter, and Terahertz Waves (IRMMW-THz 2019), Paris, France, September 3,(2019).
23. M. Jo, Y. Itokazu, S. Kuwaba and H. Hirayama, “Improved simulation of MOCVD growthof AlN by using data assimilation” , 13th International Conference on Nitride
Semiconductors (ICNS-13), Hyatt Regency Bellevue, Bellevue, Washington, July 9,(2019).
24. M. C. D. Figueira, A. Trellakis, S. Birner, M. A. Khan and H, Hirayama, “Optimizing
AlGaN-based UVB LEDs using experimental device data in the nextnano software” , 13th
International Conference on Nitride Semiconductors (ICNS-13), Hyatt Regency
Bellevue,Bellevue, Washington, July 9, (2019).
25. S. Kuwaba, Y. Itokazu, S. Motegi, Y. Mogami, A. Osawa, K. Osaki, Y. Tamioka, A.
Maeoka, M. Jo, N. Kamata and H. Hirayama, “AlGaN UVC LEDs directly grown on DCsputtered and high temperature annealed AlN templates” , 13th International Conference on
Nitride Semiconductors (ICNS-13), Hyatt Regency Bellevue, Bellevue, Washington, July
8, (2019).
26. Y. Mogami, S. Motegi, A. Osawa, K. Osaki, Y. Tomioka, A. Maeoka, Y. Itokazu, S.
Kuwaba, M. Jo, N. Maeda, H. Yagichi and H. Hirayama, “Enhanced strain relaxation in
AlGaN layers grown on sputter-based AlN templates” , 13th International Conference on
Nitride Semiconductors (ICNS-13), Hyatt Regency Bellevue, Bellevue, Washington, July
8, (2019).
27. Y. Itokazu, Y. Mogami, S. Kuwaba, S. Motegi, A. Osawa, K. Osaki, Y. Tamioka, M. Jo, N.
Kamata and H. Hirayama, “Influence of the strain relaxation on the optical property of
AlGaN quantum wells” , 13th International Conference on Nitride Semiconductors (ICNS13), Hyatt Regency Bellevue, Bellevue, Washington, July 8, (2019).
28. 室谷英彰，三好博之，武田椋平，中生拓希，倉井聡，M. A. Khan，前田哲利，定昌史，平山秀樹，山田陽一：“AlGaN系多重量子 井戸構造における励起子レート方程式モデルによる効率Droop 現象の解析”，第67 回応用物理学会春季学術講演会，上智大学四谷キャンパス，3 月15 日, (2020).
29. 三好博之，武田椋平，中生拓希，倉井聡，室谷英彰，M. A. Khan，前田哲利，定昌史，平山秀樹，山田陽一：“AlGaN 系多重量子井戸構造における励起子の輻
射・非輻射再結合レートの励起強度依存性”，第67 回応用物理学会春季学術講
演会，上智大学四谷キャンパス，3 月15 日, (2020).
30. 斉藤貴大，金輝俊，岡田成仁，前田哲利，定昌史，平山秀樹，只友一行：“ELO-FY2019

AlN テンプレートの作製とMQW の評価”，第67回応用物理学会春季学術講演会，
上智大学四谷キャンパス，3 月12 日, (2020).
31. T. T. Lin, K. Wang, L. Wang and H. Hirayama, “Progress on high output power THz
QCLs developed by reducing horizontal parasitic current leakage” , 電子情報通信学会
電子デバイス研究会，東北大学電気通信研究所，12 月23 日, (2019).
32. L. Wang, T. T. Lin, K. Wang and H. Hirayama, “Near- and far-infrared quantum cascadelasers based on GaAs and GaN materials: devices design and MBE growth” , 電子情報通信学会

電子デバイス研究会，東北大学電気通信研究所，12 月23 日,(2019).
33. T. T. Lin, L. Wang, K. Wang and H. Hirayama, “Recent progress of high output power
THz QCLs by reducing parasitic leakage current” , 理研シンポジウム第7 回「光量子工学研究」，和光地区，12 月10 日, (2019).
34. 最上耀介，大澤篤史，尾崎一人，谷岡千丈，前岡淳史，糸数雄吏，定昌史，前田哲利，矢口裕之，平山秀樹：“DC スパッタAlNテンプレートを用いたUVCLEDの進展”，電子情報通信学会レーザ・エレクトロニクス研究会，静岡大学浜松キャンパス，11 月22 日,(2019).
35. 中村励志，藤川紗千恵，前田哲利，遠藤聡，藤代博記，平山秀樹，“電子ブロック層の最適化による250nm AlGaN UVC-LED の出力改善”，第80 回応用物理学会秋季学術講演会，北海道大学，9 月20 日, (2019).
36. 斉藤貴大，中村亮太，藤川紗千恵，金輝俊，前田哲利，岡田成仁，平山秀樹，只友一行，“微傾斜サファイア基板上AlN の選択横方向成長”，第80 回応用物理学会秋季学術講演会，北海道大学，9 月20 日, (2019).
37. T. T. Lin, L. Wang and H. Hirayama, “0.44 watt power GaAs/AlGaAs THz QCLdeveloped by reducing horizontal current leakage” , 第80 回応用物理学会秋季学術講演会，北海道大学，9 月19 日, (2019).
38. 室谷英彰，三好博之，武田椋平，中生拓希，倉井聡，M. A. Khan，前田哲利，定昌史，平山秀樹，山田陽一, “AlGaN 系多重量子井戸構造における励起子レート
方程式モデルによる効率曲線の解析(2)”，第80 回応用物理学会秋季学術講演会，北海道大学，9月19 日, (2019).
39. 田邉凌平，久永桂典，濱田晟，別府寛太，倉井聡，室谷英彰，前田哲利，定昌文，平山秀樹，山田陽一, “AlGaN 量子井戸構造における深紫外誘導放出の温度依存性”, 第80 回応用物理学会秋季学術講演会，北海道大学，9 月19 日,(2019).
40. 三好博之，武田椋平，中生拓希，倉井聡，室谷英彰，M. A. Khan，前田哲利，定昌史，平山秀樹，山田陽一, “AlGaN 系多重量子井戸構造における励起子レート
方程式モデルによる効率曲線の解析”, 第80 回応用物理学会秋季学術講演会，

FY2019

北海道大学，9 月19 日, (2019).
41. M. A. Khan, J. P. Bermudo, Y. Ishikawa, H. Ikenoue, S. Fujikawa, N. Maeda, M. Jo and
H. Hirayama, “The influence of both Mg-concentration and excimer laser annealing(ELA) on p-AlGaN cladding layer for the application of AlGaN-based UVB Laser
Diodes” , 第80 回応用物理学会秋季学術講演会，北海道大学，9 月18 日,(2019).
42. 最上耀介，大澤篤史，尾崎一人，谷岡千丈，前岡淳史，糸数雄吏，桑葉俊輔，定昌史，前田哲利，矢口裕之，平山秀樹，“DC スパッタAlN を用いたAlGaN 層格
子緩和の促進”，第80 回応用物理学会秋季学術講演会，北海道大学，9 月18日, (2019).
43. 最上耀介，大澤篤史，尾崎一人，谷岡千丈，前岡淳史，糸数雄吏，桑葉俊輔，定昌史，前田哲利，矢口裕之，平山秀樹，“DC スパッタAlN テンプレート上UVC
AlGaN LED の作製と評価”, 第80 回応用物理学会秋季学術講演会，北海道大学，9 月18 日, (2019).
44. 平山秀樹：“特異構造の特性を生かした新機能発光デバイスの研究”，新学術領域研究第4 回領域全体会議，ホテル＆リゾーツ長浜，4 月19 日, (2019).
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（５）特筆すべき事項・トピックス／ Topics
1. JST news Vol. 8, “深紫外 LED の性能向上で水銀不使用の殺菌灯を目指す”, 8 月
9 日, (2019). ISSN 1349-6085