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ᴫせ䠍䠊㧗ฟຊ໬䛾䛯䜑䛻
䞉ఱᨾGaN䛺䛾䛛䠄 䠣䠽䠝䡏 䡒䡏 䠣䠽䠪䠅‫֥ࠢف҄˳׍‬ဇᩓщᵤᵣᵲỉ᧏ႆཞඞ䠎䠊⌧≧䛸௒ᚋ䛾ㄢ㢟䞉䠟ᖏ䚸䠴ᖏ䚸䠄䠧䡑ᖏ䠅䛷䛾ฟຊ䞉⌧ᅾ䛾ಙ㢗ᛶ䛿䠛䞉ྛ♫䛾㛤Ⓨ≧ἣ䞉௒ᚋ䛾ㄢ㢟➼䠄ᰴ䠅ᮾⰪ 䝬䜲䜽䝻Ἴᢏ⾡㒊▼ᮧ ᾈ䠏䠊ᅛయ໬ቑᖜჾ➼䜈䛾ᛂ⏝౛䞉䝺䞊䝎䜈䛾㐺⏝

2007ᖺ 䠔᭶ 䠏1᪥
Copyright 2007, Toshiba Corporation.

2㟁Ἴ⯟ἲ◊✲఍➨஧ᅇ◊✲఍㈨ᩱ

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ఱᨾ㧗ฟຊ໬࡞ࡢ࠿㸫㏻ಙᶵჾ⏝㏵㸫ఱᨾ㧗ฟຊ໬࡞ࡢ࠿㸫㏻ಙᶵჾ⏝㏵㸫

ᴫせ䠍䠊㧗ฟຊ໬䛾䛯䜑䛻䞉ఱᨾGaN䛺䛾䛛䠄 䠣䠽䠝䡏 䡒䡏 䠣䠽䠪䠅䖃኱ᐜ㔞䝕䝆䝍䝹䝕䞊䝍㏻ಙ䛾せồ→ పṍ໬(ṍຠ⋡ྥୖ䠅䛾せồ䛻ຍ䛘䠎䠊⌧≧䛸௒ᚋ䛾ㄢ㢟䞉䠟ᖏ䚸䠴ᖏ䚸䠄䠧䡑ᖏ䠅䛷䛾ฟຊ䞉⌧ᅾ䛾ಙ㢗ᛶ䛿䠛䞉ྛ♫䛾㛤Ⓨ≧ἣ䞉௒ᚋ䛾ㄢ㢟➼ᦠᖏᇶᆅᒁ⾨ᫍᆅ⌫ᒁ䞉䝏䝱䝛䝹ᩘቑ኱䞉䝕䞊䝍ᐜ㔞ቑ኱䞉䝕䞊䝍ᐜ㔞ቑ኱䞉SSPA໬䛾ຍ㏿

䞉㏻ಙ㊥㞳ᣑ኱䛾せㄳ䠏䠊ᅛయ໬ቑᖜჾ➼䜈䛾ᛂ⏝౛䞉䝺䞊䝎䜈䛾㐺⏝㟁ຊ䠢䠡䠰㧗ฟຊ໬䛾せồ13ఱᨾ㧗ฟຊ໬䛺䛾䛛䠉䝺䞊䝎⏝㏵䠉ఱᨾ㧗ฟຊ໬䛺䛾䛛䠉䝺䞊䝎⏝㏵䠉
≉ 㛗

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㻳㼍㻭㼟䛾㝈⏺

⏝ ㏵

Vmax-Vknee䝭䝃䜲䝹㜵⾨䝺䞊䝎

Pout䠙

Imax㽢(Vmax-Vknee)䠔Imax㧗ฟຊ໬᥈▱㊥㞳ᘏఙ䚸ᑠ┠ᶆ᥈▱䚸ECM
᥈▱㊥㞳ᘏఙ䚸ᑠ┠ᶆ᥈▱䚸ECM➼➼㟁ὶ㟁ᅽ䛜㝈⏺䜢㉸䛘䜛䛸㟁ᅽ䛜㝈⏺䜢㉸䛘䜛䛸⣲Ꮚ䛜ቯ䜜䜛䟿

HPM䠄High Power Mirowave䠅
Mirowave䠅䝺䞊䝎✵୰⥺䛾ᑠᆺ໬
⛣ື䠋ྍᦙᛶ䚸ᦚ㍕ไ⣙䛾⦆࿴➼⯟ἲẼ㇟䝺䞊䝎ᦚ㍕⏝䝺䞊䝎

Vknee

FCS䝺䞊䝎
FCS䝺䞊䝎
䝅䞊䜹㟁ᅽ

Vmax➼
4620070816-1

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䠣䠽䠝䡏䛻௦䜟䜛༙ᑟయᮦᩱ䛿↓䛔䛛䠛䝬䜲䜽䝻Ἴቑᖜ⣲Ꮚ䛸䛧䛶㻳㼍㻭㼟㻌 䠣䠽䠝䡏 䛾≉㛗㻌 㧗㏿ືస䠖㟁Ꮚ⛣ື㏿ᗘ䛜䝅䝸䝁䞁䛻ẚ䜉᱁ẁ䛻㏿䛔㻵㻵→䝬䜲䜽䝻Ἴᖏቑᖜ⣲Ꮚ䛾௦⾲䛸䛧䛶㻟㻜ᖺ௨ୖ䛾ᐇ⦼㻞㻵㻵㻵㻮㻵㼂㻯㼂㻺㼂㻵㻻㻟㻭㼘㻿㼕㻼㻿䞉༢ඖ⣲…Si䚸Ge㼆㼚㻳㼍㻳㼑㻭㼟㻿㼑䞉໬ྜ≀㻡 㻯㼐㻵㼚㻿㼚㻿㼎㼀㼑㻢 㻴㼓㼀㼘㻼㼎㻮㼕㻼㼛㻌 ཷⓎගᶵ⬟䠖䝅䝸䝁䞁䛻ẚ䜉䛶ྍどග䡚㉥እග䛾㡿ᇦ䜢Ⓨග→䠫䠡䠥䠟㻌 ⬤䛔䠖䝅䝸䝁䞁䛻ẚ䜉䛶๭䜜䜔䛩䛟䚸኱ᆺ໬䛜㞴䛧䛔㻠㻌 㧗౯䠖䝅䝸䝁䞁䛻ẚ䜉䛶䝁䝇䝖䛜㧗䛔༙ᑟయ

II-VI…ZnSe ,ZnS, CdS
III-V…GaAs, GaP ,GaN
IV-IV…SiC, SiGe䜋䜌GaAs䛜䜒䛴ᮦᩱ䛸䛧䛶䛾ฟຊ㝈⏺䛻㏆䛔䛸䛣䜝䜎䛷〇ရ໬䛜㐍䜣䛰

57

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䝬䜲䜽䝻Ἴ༙ᑟయᮦᩱ䛾㟁Ꮚ㏿ᗘ䞉㟁⏺≉ᛶ䛾ẚ㍑䠣䠽䠪䛿ᐇ⏝ᇦ䛾㟁Ꮚ㏿ᗘ䛜㏿䛔䟿ᮦᩱ᱁Ꮚᐃᩘ㻔䊅㻕

GaN4H-SiC
6H-SiCGaAsSi㼍 㻌㻟㻚㻝㻤㻥㼍㻌㻟㻚㻜㻣㻟㼍㻌㻟㻚㻜㻤㻡㻚㻢㻡㻟㻟㻡㻚㻠㻟㻜㻝㼏㻌㻡㻚㻝㻤㻡㼏㻌㻝㻜㻚㻜㻡㻟㼏㻌㻝㻡㻚㻝㻞⚗ไᖏᖜ㻔㼑㼂㻕㻟 㻚㻟㻥㻟㻚㻞㻢㻟㻝㻚㻠㻟㻝㻚㻝㻞㟁Ꮚ⛣ືᗘ䃛㻥 㻜㻜䎹㻌㻤㻡㻜䎹㻌㻠㻜㻜㻤㻡㻜㻜㻝㻠㻜㻜㻞㻰㻱㻳㻌㻞㻜㻜㻜㻛㻛㻌㻝㻜㻞㻜㻛㻛㻌㻤㻜ṇᏍ⛣ືᗘ㻝 㻡㻜㻝㻝㻡㻥㻜㻠㻜㻜㻢㻜㻜◚ቯ㟁⏺㻱㼏㻟㻚㻟㻱㻗㻜㻢㻞㻚㻞㻱㻗㻜㻢㻞㻚㻡㻱㻗㻜㻢㻠㻚㻱㻗㻜㻡㻟㻚㻱㻗㻜㻡⇕ఏᑟᗘ䃚(W/cmK)㻝㻚㻟䡚㻞㻠㻚㻥
㻠㻚㻥㻜㻚㻡㻝㻚㻡㣬࿴㏿ᗘ㼢㼟㼍㼠㻞䡚㻞㻚㻣㻱㻗㻜㻣㻞㻚㻞㻱㻗㻜㻣㻝㻚㻥㻱㻗㻜㻣㻝㻚㻟㻱㻗㻜㻣㻝㻚㻜㻱㻗㻜㻣ㄏ㟁⋡䃔㻥㻥㻚㻣㻝㻜㻝㻞㻚㻤㻝㻝㻚㻤䢆䢚䢕䡴ᡂ㛗
㽢 →䕧
䕧→䕿
䕧→䕿
䖂䖂䡰䢇䢛ᡂ㛗
䕧 →䕿
䕧→䕿
䕧→䕿䖂䖂㻿㻭㻼㻘㻿㼕㻯㻘㻿㼕㻢㻡㻟㻟㻠㻜㻝㻥㻝㻝㻢㻝㻮㻹䠄ᑐ㻿㼕䠅㻮㻴㻲㻹䠄ᑐ㻿㼕䠅㻣㻤㻡㻜㻞㻡㻝㻝㻝㟷Ⰽග⣲Ꮚ༙ᑟయ⏘ᴗ㧗࿘Ἴ⣲Ꮚ 䝟䝽䞊⣲Ꮚ 䝟䝽䞊⣲Ꮚ 㧗࿘Ἴ⣲Ꮚ䡿䢚䢆䢚䡮䡹䡼䡬䡵䢚䡫䢀䛾୰ᚰ䝟䝽䞊⣲Ꮚᐇ䝕䝞䜲䝇㟁⏺㡿ᇦ㟁Ꮚ ㏿ᗘ

BM : 䝞䝸䜺䞊ᛶ⬟ᣦᩘ䠄ప࿘Ἴ䠅䠙䃔䃛E䠿䠏
BHFM : 䝞䝸䜺䞊ᛶ⬟ᣦᩘ䠄㧗࿘Ἴ䠅䠙䃛E䠿䠎

43v

2InPGaNGaAs(㽢107cm/sec)
1Si
050100㟁⏺ E (KV/cm)

䡷䢈䡣䡮䡭 : 䃚=0.42
a=4.76䠈c=12.99

150

810

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䛭䛾ᮦᩱ≉ᛶ䛛䜙䚸㧗ฟຊ໬䜈䛾䝫䝔䞁䝅䝱䝹䛜ὀ┠䛥䜜䛶䛔䜛䝽䜲䝗䝞䞁䝗䜼䝱䝑䝥䠄䠳䠞䠣䠅༙ᑟయ 㧗䛔㣬࿴㏿ᗘ
䠄GaAs䛾1䠊35ಸ䠅䝞䞁䝗䜼䝱䝑䝥䠄⚗ไᖏᖜ䠅䛜䠎䡁䠲䡚䠒䡁䠲䛾༙ᑟయ ኱䛝䛺⤯⦕◚ቯ㟁⏺
䠄GaAs䛾⣙10ಸ䠅䠄୍⯡ⓗ䛺≉ᚩ䠅 ໬Ꮫ⤖ྜ䠄ཎᏊ㛫⤖ྜຊ䠅䛜ᙉ䛟䚸ᮦ㉁䛜◳䛔ᶵᲔⓗ䠈໬Ꮫⓗ䛻Ᏻᐃ䛷䛿䛒䜛䛜䚸ຍᕤ䛜㞴䛧䛔 㧗䛔⇕ఏᑟ⋡
䠄GaAs䛾2.6ಸ䠅Ᏻᐃືస ከ䛟䛾䊢䠉䊤᪘䚸䊡䠉䊥᪘໬ྜ≀䛜┤᥋㑄⛣ᆺ༙ᑟయ䛷䛂ග䜛䛃 ప䛔ㄏ㟁⋡䠄GaAs䛾⣙3/4ಸ䠅 ⎔ቃㄪ࿴ᮦᩱ䛜ከ䛔䠄᭷ᮃど䛥䜜䛶䛔䜛ᮦᩱ౛䠅䠣䠽䠪䚸䠯䡅䠟䚸䠟䠄䝎䜲䝲䝰䞁䝗䠅䚸䠝䡈䠪䚸䠶䡊䠫 ➼䠣䠽䠪䛿䛥䜙䛻ྑ䛾฼Ⅼ᭷䜚 Ᏻ඲䛷㇏ᐩ䛺ᮦᩱ ཎᏊ㛫⤖ྜຊ኱䞉䠤䠡䠩䠰ᵓ㐀䛜䛷䛝䜛䞉ຍᕤᛶ䛜Ⰻ䛔䠄䠣䠽䠝䡏䛸䜋䜌ྠ䛨䝥䝻䝉䝇䛜౑䛘䜛䠅9 ప䡱䢙᢬ᢠ 㧗ฟຊ䞉㧗⪏ᅽ⏕ᐜ㔞䛜ᑡ䛺䛔 ኱䛝䛺䝞䞁䝗䜼䝱䝑䝥
䠄GaAs䛾2.4ಸ䠅 㧗Ᏻᐃືస⇕ᨺᩓ኱ᐤ 㧗 㧗㏿䞉㧗࿘Ἴᩘືస
኱䛝䛺ಙྕ㟁ᅽ 䝦䝔䝻ᵓ㐀䛜ྍ⬟䠄ḟୡ௦⣲Ꮚ䛸䛧䛶ᮇᚅ䛥䜜䛶䛔䜛≉㛗䠅

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䠣䠽䠪ᮦᩱ䛾≉㛗䠣䠽䠝䡏䛻᭰䜟䜛䝬䜲䜽䝻Ἴ༙ᑟయᮦᩱ ⎔ቃㄪ࿴(As䢈䢔䡬) ᶵᲔⓗ䞉໬ᏛⓗᏳᛶ ග䜛䠄LED䚸LD䠅 ┤᥋䝞䞁䝗䜼䝱䝑䝥11

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GaN䠄-HEMT䠅䛾䇾≉㛗䇿GaN⣔HEMT ᵓ㐀ᶍᘧᅗ䠣䠽䠪䛿䠤䠡䠩䠰ᵓ㐀䛜䛷䛝䜛䡵䢚䡬䢀㟁ᴟ
(Ni/Au)䠣䠽䠪 䠤䠡䠩䠰䛿㟁ὶ䜢䛯䛟䛥䜣ὶ䛫䜛䠉䠎

undopeAl0.3Ga0.7N (50A)䡵䢚䡬䢀䡶䢙䡼䡴䢀ᒙ䡻䡬䡹㟁ᴟ
(Ti/Al/Ni/Au)

䢀䢚䢖䡮䢙㟁ᴟ(Ti/Al/Ni/Au)

n-AlGaN஧ḟඖ㟁Ꮚ䡲䢚䡹䡽䡨䢄䢕

UD-GaN(3.0um)

䡮䡱䢙໬䛧䛯䢀䢚䢁䡬஧ḟඖ㟁Ꮚ䡲䢚䡹
1.2eVn-Al0.3Ga0.7N㟁Ꮚ౪⤥ᒙ
(5E18cm-3, 100A)䠇䠇䠇䠇䠇䠇 䠇䠇䠇

䠇Ec䡵䢚䡬䢀㔠ᒓUD 䡹䢉䢛䡬䡷䡬ᒙ
Al0.3Ga0.7N(30A)䛥䜙䛻䚸⮬Ⓨศᴟ䛸䝢䜶䝌㟁Ẽศᴟ䛾ຠᯝ

Evn-AlGaN

UD-GaN䡽䡨䢄䢕ᒙ䝞䞁䝗୙㐃⥆䛜኱䛝䛔

UD-GaNAlN ᰾ᙧᡂᒙ䜻䝱䝸䜰⃰ᗘ䛜
GaAs䛾5䡚6ಸ䡷䢈䡣䡮䡭ᇶᯈ (0001) or SiCᇶᯈ

1214

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䠣䠽䠪༙ᑟయ䛾≉㛗㻳㼍㻺䛷䛿㟁ᅽ䚸㟁ὶ䛸䜒኱䛝䛟䛸䜜䜛䠣䠽䠪 䠤䠡䠩䠰䛿㟁ὶ䜢䛯䛟䛥䜣ὶ䛫䜛䠉䠍䝦䝔䝻᥋ྜ䛻䜘䜛ศᴟຠᯝPout䠙
Vmax-Vknee⤖ᬗᡂ㛗⤖ᬗṍ䜏䛻䜘䜚ศᴟ
AlGaN

Imax㽢(Vmax-Vknee)
䠔Imax

䛜Ⓨ⏕

(111)

㟁ᅽ䠐
㟁ᅽ䠐䡚䠑ಸ䚸㟁ὶ䠎ಸ䚸㟁ὶ䠎䡚䠏ಸ㟁ὶ

GaAs䛾䠍䠌ಸ䝟䝽䞊ᐦᗘ䠖 GaAs䛾䠍䠌ಸImaxGaNGaN
GaAsVmax 䠚 Vmax
Imax 䠚 Imax୙⣧≀䜢䝗䞊䝥䛧䛺䛟䛶䜒㧗䜻䝱䝸䜰⃰ᗘ䛾䠎ḟඖ㟁Ꮚᒙ䛜ᚓ䜙䜜䜛

Vknee Vknee䜻䝱䝸䜰⃰ᗘ䛜GaAs䛾5䡚6ಸ → 㟁ὶ䜢䛯䛟䛥䜣ὶ䛫䜛

13

㟁ᅽVmax

Vmax

Pout 䠚 Pout15

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᪤Ꮡ⣲Ꮚ䠄Siྵ䜑䛯䠅䛸GaN⣔⣲Ꮚฟຊẚ㍑

ᴫせ䠍䠊㧗ฟຊ໬䛾䛯䜑䛻
䞉ఱᨾGaN䛺䛾䛛䠄 䠣䠽䠝䡏 䡒䡏 䠣䠽䠪䠅㻝㻜㻌㻾㻲㻌㻼㼛㼣㼑㼞㻌㻰㼑㼚㼟㼕㼠㼥㻔㼃㻛㼙㼙㻕

GaN-HEMT
SiC-FET
GaAs-FPFET㻝

GaAs-FET䠎䠊⌧≧䛸ㄢ㢟䞉䠟ᖏ䚸䠴ᖏ䚸䠄䠧䡑ᖏ䠅䛷䛾ฟຊ䞉ಙ㢗ᛶ䛿䠛
䞉ྛ♫䛾㛤Ⓨ≧ἣ
䞉ㄢ㢟➼

LDMOS

Infrastructure㻜㻚㻝
GaAs-FETHandheld㻜㻚㻜㻝㻝㻝㻜䠏䠊ᅛయ໬ቑᖜჾ➼䜈䛾ᛂ⏝౛䞉䝺䞊䝎㻝㻜㻜㼂㼛㼘㼠㼍㼓㼑 㻌㻔㼂㻕
1618

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䠣䠽䠪⣲Ꮚ䛾≉㛗䠖䜎䛸䜑20070816-1

䠟ᖏ䛻䛚䛡䜛㻳㼍㻺༙ᑟయ䝕䝞䜲䝇ሗ࿌౛ 㻔㻝㻕≉㛗

NEC• 䝞䞁䝗䜼䝱䝑䝥኱䞉䞉䞉㧗⪏ᅽ• 䝢䜶䝌ຠᯝ䞉䞉䞉㧗㟁Ꮚᐦᗘ䝢䜶䝌ຠᯝ䞉䞉䞉㧗㟁Ꮚᐦᗘ → 㧗ฟຊ໬䛜ྍ⬟• 㟁Ꮚ䛾㣬࿴㏿ᗘ኱䞉䞉䞉㧗㏿䠈㧗࿘Ἴືసಸ䠅䞉䞉䞉㧗ฟຊ໬໬䛜ྍ⬟• 㧗䛔⇕ఏᑟᗘ䠄䠣䠽䠝䡏䛾2.6㧗䛔⇕ఏᑟᗘ䠄䠣䠽䠝䡏䛾2.6ಸ䠅䞉䞉䞉㧗ฟຊ• ཎᏊ㛫⤖ྜຊ኱䞉䞉䞉ᶵᲔⓗ䚸໬Ꮫⓗ䛻Ᏻᐃ䞉 㧗࿘Ἴ㧗ฟຊ䝟䝽䞊䜰䞁䝥Lᖏ䛛䜙䝭䝸Ἴ䜎䛷䞉㧗 䠈ᨺᑕ⥺䞉䞉䞉⪏⎔ቃ⣲Ꮚ䞉పᦆኻ䝟䝽䞊䝕䝞䜲䝇

Y. Okamoto, et al.
2005 IEEE MTTS Int. Microwave Symp.

@ 4GHz Pulsed output power 150W @ Vd=50V
Breakdown Voltage >200V @ 1mA/mm
1719

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䠟ᖏ䛻䛚䛡䜛㻳㼍㻺༙ᑟయ䝕䝞䜲䝇ሗ࿌౛䠄䠎䠅Mitsubishi

20070816-1

ᙜ♫䛻䛚䛡䜛㛤Ⓨ౛䠖㼄ᖏ䠑䠌㼃⣭㟁ຊ㻲㻱㼀 㻔㻳㼍㻺㻕

Y. Kamo, et al.
2005 IEEE MTTS Int. Microwave Symp.

䕺Xᖏ䠑䠌W⣭㟁ຊFET (GaN)Xᖏ䠑䠌W⣭㟁ຊFET (GaN)䛾䝟䝑䜿䞊䝆䠆䝟䝑䜿䞊䝆䝃䜲䝈䠄᭱እ࿘ᑍἲ䠅䠖
21.5mm㽢12.9mm@ 5GHz Pulsed output power 140W @ Vd=40V
Breakdown Voltage 160V @ 1mA/mm

ᙜ♫䛻䛚䛡䜛ホ౯⤖ᯝ

@ 9.5GHz CW output power 䠔䠍䠊䠏W @ Vd=䠏䠌V
Breakdown Voltage >䠍䠑䠌V @ 1mA/mm
2022

20070816-1

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ᙜ♫䛻䛚䛡䜛㛤Ⓨ౛䠖䠧䡑ᖏ㟁ຊ㻲㻱㼀 㻔㻳㼍㻺㻕ᙜ♫䛻䛚䛡䜛㛤Ⓨ౛ @6GHz䠧䡑ᖏ䠑䠌䠧䡑ᖏ䠑䠌W⣭㟁ຊFET (GaN)

405060PAE3080

34.7%
4020Pout1013.2dB
Gain

20010CW89W

Wg = 46.08mm
f = 6.0GHz
Vds = + 22V

4080

Pout60

PAE30

31.1%

402010.2dB

䠯䠕䠦䠑䠌㏆᪥୰䛻䠧䡑ᖏ䠑䠌W㉸⣲Ꮚ䛾⤖ᯝ䜢Ⓨ⾲䛧䜎䛩2010Gain

00100

PAE ( % )Wg = 46.08mm
f = 6.0GHz
Vds = + 25V

60
Pout (dBm), Gain (dB)pulse ; width = 20μs, duty = 2.5% 174W

50100

PAE ( % )Pout (dBm), Gain (dB)

60

2030
Pin (dBm)

4050000102030
Pin (dBm)

4050

䠧䡑ᖏ䠑䠌W⣭㟁ຊFET (GaN)䛾䝟䝑䜿䞊䝆䠆䝟䝑䜿䞊䝆䝃䜲䝈䠄᭱እ࿘ᑍἲ䠅䠖
21.5mm㽢12.9mm@ 䠒GHz Pulsed output power 䠍䠓䠐W @ Vd=䠎䠑V
Breakdown Voltage >䠍䠑䠌V @ 1mA/mm
2123

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ᴫせ䠍䠊㧗ฟຊ໬䛾䛯䜑䛻䞉ఱᨾGaN䛺䛾䛛䠄 䠣䠽䠝䡏 䡒䡏 䠣䠽䠪䠅ᴫせ䠍䠊㧗ฟຊ໬䛾䛯䜑䛻䞉ఱᨾGaN䛺䛾䛛䠄 䠣䠽䠝䡏 䡒䡏 䠣䠽䠪䠅䠎䠊⌧≧䛸௒ᚋ䛾ㄢ㢟䞉䠟ᖏ䚸䠴ᖏ䚸䠄䠧䡑ᖏ䠅䛷䛾ฟຊ䞉⌧ᅾ䛾ಙ㢗ᛶ䛿䠛䞉ྛ♫䛾㛤Ⓨ≧ἣ䞉௒ᚋ䛾ㄢ㢟➼䠎䠊⌧≧䛸௒ᚋ䛾ㄢ㢟䞉䠟ᖏ䚸䠴ᖏ䚸䠄䠧䡑ᖏ䠅䛷䛾ฟຊ䞉⌧ᅾ䛾ಙ㢗ᛶ䛿䠛䞉ྛ♫䛾㛤Ⓨ≧ἣ䞉௒ᚋ䛾ㄢ㢟➼䠏䠊ᅛయ໬ቑᖜჾ➼䜈䛾ᛂ⏝౛䞉䝺䞊䝎䜈䛾㐺⏝䠏䠊ᅛయ໬ቑᖜჾ➼䜈䛾ᛂ⏝౛䞉䝺䞊䝎䜈䛾㐺⏝24

26

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༑ศ〇ရ໬䛷䛝䜛䝺䝧䝹䛻䛺䛳䛯GaN䠤䠡䠩䠰㧗

DARPA୺ᑟ Xᖏ䢈䡦䡬䡹䢚䢀䢚䡭䢖䡬䡭䢙䡿䢁⏝ᅛయቑᖜჾ
1998 䞉Nitres♫タ❧(UCSB) GaN⣔PA㛤Ⓨ䞉〇㐀ຍ㏿㏻㟁ヨ㦂⤖ᯝ㻵㼐㼟㼟Ⰻዲ䛺ಙ㢗ᛶ㼀㻱㻳㻔㻜㻚㻥㻢㼙㼙㻕㏻㟁
㼄㻞㻙㻝㻝㻚㻝㻠㻜㼇㼂㼉㻌㻜㻚㻞㼇㻭㼉㻌㻞㻜㻜㼇䉝㼉㻌㼄㻞㻙㻝㻙㻡㻠㻜㼇㼂㼉㻌㻜㻚㻞㼇㻭㼉㻌㻞㻜㻜㼇䉝㼉㻌㼄㻞㻙㻝㻙㻣㻠㻜㼇㼂㼉㻌㻜㻚㻞㼇㻭㼉㻌㻞㻜㻜㼇䉝㼉㻌㼄㻞㻙㻝㻙㻤㻠㻜㼇㼂㼉㻌㻜㻚㻞㼇㻭㼉㻌㻞㻜㻜㼇䉝㼉㻌㼄㻞㻙㻝㻙㻥㻟㻜㼇㼂㼉㻌㻜㻚㻞㼇㻭㼉㻌㻞㻜㻜㼇䉝㼉㻌㼄㻞㻙㻝㻙㻝㻜㻟㻜㼇㼂㼉㻌㻜㻚㻞㼇㻭㼉㻌㻞㻜㻜㼇䉝㼉㻌㼄㻞㻙㻝㻙㻝㻝㻟㻜㼇㼂㼉㻌㻜㻚㻞㼇㻭㼉㻌㻞㻡㻜㼇䉝㼉㻌㼄㻞㻙㻝㻙㻝㻞㻟㻜㼇㼂㼉㻌㻜㻚㻞㼇㻭㼉㻌㻟㻜㻜㼇䉝㼉㻌㼄㻞㻙㻝㻙㻝㻟㻟㻜㼇㼂㼉㻌㻜㻚㻝㼇㻭㼉㻌㻞㻡㻜㼇䉝㼉㻌㼄㻞㻙㻝㻙㻝㻠㻠㻜㼇㼂㼉㻌㻜㻚㻞㼇㻭㼉㻌㻞㻡㻜㼇䉝㼉㻌㼄㻞㻙㻝㻙㻝㻡㻠㻜㼇㼂㼉㻌㻜㻚㻝㼇㻭㼉㻌㻞㻡㻜㼇䉝㼉㻌㼄㻞㻙㻝㻙㻝㻣㻡㻜㼇㼂㼉㻌㻜㻚㻞㼇㻭㼉㻌㻞㻜㻜㼇䉝㼉㻌㼄㻞㻙㻝㻙㻝㻤㻡㻜㼇㼂㼉㻌㻜㻚㻞㼇㻭㼉㻌㻞㻡㻜㼇䉝㼉㻌㼄㻞㻙㻝㻙㻝㻥㻡㻜㼇㼂㼉㻌㻜㻚㻞㼇㻭㼉㻌㻞㻡㻜㼇䉝㼉㻌㼄㻞㻙㻝㻙㻞㻜㻡㻜㼇㼂㼉㻌㻜㻚㻞㼇㻭㼉㻌㻟㻜㻜㼇䉝㼉㻌㼄㻞㻙㻝㻙㻞㻝㻡㻜㼇㼂㼉㻌㻜㻚㻝㼇㻭㼉㻌㻞㻡㻜㼇䉝㼉㻌㼄㻞㻙㻝㻙㻞㻞㻡㻜㼇㼂㼉㻌㻜㻚㻝㼇㻭㼉㻌㻞㻡㻜㼇䉝㼉㻌㼄㻞㻙㻝㻙㻞㻟㻠㻜㼇㼂㼉㻌㻜㻚㻞㼇㻭㼉㻌㻟㻜㻜㼇䉝㼉㻌㼄㻞㻙㻝㻙㻞㻠㻟㻜㼇㼂㼉㻌㻜㻚㻞㼇㻭㼉㻌㻞㻡㻜㼇䉝㼉㻌㻣㻙㻡㻙㻞㻌㻟㻝㻜㻚㻥㻜㻚㻤㻵㼐㼟㼟㻌పୗ⋡㻜㻚㻣㻜㻚㻢㻜㻚㻡㻜㻚㻠㻜㻚㻞

2002䡚 DARPA୺ᑟ䛷᪂䛯䛺䝥䝻䜾䝷䝮WBG Technology Initiative2ᖺ๓䝃䞁䝥䝹㻝㻜㻜

䋻Microsystem Integration
2003䡚2004
䞉TriQuint♫ 䛿䛨䜑໬ྜ≀༙ᑟయ௻ᴗ䚸GaN⣔Power Amp.⣲Ꮚヨస⤖ᯝ䞉Cree ♫ATMI♫㈙཰(2003ᮎ)㻜㻝㻜
㏻㟁᫬㛫㻌㼇㻴㼉䞉Nitronex♫タ❧䠄North Carolina State Univ. 䠅
䞉RF-Nitro♫タ❧䠄Hughes Electronics and Cornell Univ. 䠅䞉RF Micro Devices䠄TRW䛾Ꮚ఍♫ GaAs HBT for CDMA䠅
RF-Nitro㈙཰(2001ᮎ)㻜㻚㻝㻝2000 䞉Cree♫(SiC䢀䡫䢈䢛䢎䡬䡲䡬䠅 Nitres♫䜢㈙཰
䞉Cree Lighting♫ GaN⣔PA䝃䞁䝥䝹ฟⲴⓎ⾲

2001 䞉Nitronex♫ GaN on Si ⣔PA䝃䞁䝥䝹ฟⲴⓎ⾲
䞉RF-Nitro♫ GaN⣔PA䝃䞁䝥䝹ฟⲴⓎ⾲

㻜㻚㻟

㻜㻚㻝

20070816-1⡿ᅜ䛻䛚䛡䜛㻳㼍㻺⣲Ꮚ㛤Ⓨ䚸ᐇ⏝໬䜈䛾ື䛝㻝㻜㻜㻜

2005䡚2007
䞉 Nitronix♫䠋Cree♫䠋RF Micro Device♫䠋RFHIC♫䠄㡑ᅜ䠅➼䛜Lᖏ䚸Sᖏ䛾䝃䞁䝥䝹2527

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㻳㼍㻺⣔⣲Ꮚ◊✲㛤Ⓨ䛾ືྥᴫせ䞉Ḣᕞྛ♫䛾ฟຊ➇த≧ἣ䠄ᢤ⢋䠅ḢᕞEU䛛䜙䛾䝣䜯䞁䝗
䞉BRITE-EURAM䢈䢛䢗䡴䢚䢓䢍䞉MIGHT-Project䠈䞉ESPRIT䢈䢛䢗䡴䢚䢓䢍 ➼Ẹ㛫௻ᴗMarconi䠈Thomas Swan䠈Thomson CSF䠈CNRS䠈Infineon䠈 Daimler-Chrysler䠈
Pico䡃iga International, 䞉䞉䞉኱Ꮫ ◊✲ᶵ㛵
Nottingham ኱Ꮫ䠄ⱥᅜ䠅,Ghent ኱Ꮫ䠄䝧䝹䜼䞊䠅 䠈IMEC䠄䝧䝹䜼䞊䠅䠈Ulm኱Ꮫ, Fraunhofer Institute䠄⊂䠅䡡䡡䡡L䡚S䝞䞁䝗䠖ᦠᖏ㟁ヰᇶᆅᒁ䚸WiMAXྥ䛡䛻㞟୰㻝㻜㻜㻜
Eudynapulse

CreeTSB㻲㼡 㼖㼕㼠㼟㼡 㻌㼜㻙 㼜pulse㻲㼡 㼖㼕㼠㼟㼡pulse㻺㼕㼠㼞㼛㼚 㼑 㼤㻌㼛㼚 㻌㻿㼕㻲㻱㻰㻌㻲㻼㻺㻱㻯㻌㼜㼡 㼘㼟㼑 㻌㼟㼍㼜㼜㼔 㼕㼞㼑CWCW
㻯㼞㼑 㼑pulse
CW㻳㻱㻌㼜㼡 㼘㼟㼑ฟຊ 䠄䠳 䠅㻝㻜㻜㼀㻿㻮 㻯㼞㼑 㼑䠌䠒䠋䠍䠍䛾CSICS䠄⡿ᅜ䝔䜻䝃䝇ᕞ䠅䛻䛶Ⓨ⾲ ཬ䜃 䝥䝺䝇䝸䝸䞊䝇䠌䠓┠ᶆCW㻯㼞㼑 㼑 㻌㼜㼡 㼘㼟㼑CW㻯㼞㼑 㼑Frauhofer㻳㻱㻌㼜㼡 㼘㼟㼑㻝㻜ᮾⰪ୕⳻Ḣᕞ䛛䜙䛿Ꮫ఍䛷䛾Ⓨ⾲䛜୺䛷䛒䜛䛜䚸Kaᖏ䜎䛷䛾䝕䝞䜲䝇ヨస౛䜒බ⾲㻲㻱㻰RockwellRockwell䠪䠡䠟㻰㼍㼕㼙㼘㼑 㼞㻯㼔 㼞㼥㼟㼘㼑 㼞㼀㻾㼃㻯㼞㼑 㼑㻺㻱㻯㻝㻝㻝㻜࿘Ἴᩘ䠄䠣䠤䡖䠅

㻝㻜㻜

2830

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㻳㼍㻺⣔⣲Ꮚ◊✲㛤Ⓨ䛾ືྥᴫせ䞉᪥ᮏ䞉NEC䛜ඛ⾜╔ᡭᴫせ䠍䠊㧗ฟຊ໬䛾䛯䜑䛻䞉ఱᨾGaN䛺䛾䛛䠄 䠣䠽䠝䡏 䡒䡏 䠣䠽䠪䠅

1998ᖺ

GaAs䝕䝞䜲䝇◊✲㛤Ⓨ䛾䡮䢙䢈䢓䜢฼⏝䞉ᯇୗ㟁Ꮚ䠈Ἀ㟁Ẽ䠈ᐩኈ㏻䠈ྂἙ㟁ᕤ䠈 NTTSONY䛺䛹䛜╔ᡭ
䞉NEDO ᆅᇦ䝁䞁䝋䞊䝅䜰䝮䞉᪂䛧䛔ᅜ䝥䝻䛾ື䛝䠄2002ᖺ䡚䠅⣲Ꮚ༠䠄❧࿨㤋኱Ꮫ䚸NEC䚸⏘⥲◊ ௚䠅䞉䞉䞉㧗࿘Ἴ䝟䝽䞊⣲Ꮚ㛤Ⓨ 2002ᖺ䡚2007ᖺ䝃䞁䜿䞁㟁Ẽ 䞉䞉䞉 㟁※⏝䝟䝽䞊䝕䝞䜲䝇㛤Ⓨ௚䚸⥲ົ┬⣔䚸⤒⏘┬⣔PJ䛒䜚䞉୕⳻㟁ᶵ䚸᪥ᮏ㟁Ẽ䠖Ꮫ఍䚸䝥䝺䝇➼䛷Sᖏ䚸Cᖏ㟁ຊFET䜢Ⓨ⾲ 䠎䠌䠌䠑ᖺ䡚䠎䠌䠌䠒ᖺ䞉䠡䡑䡀䡕䡊䠽䛜䠯ᖏ䛷䝃䞁䝥䝹ฟⲴ㛤ጞ䠎䠌䠌䠑ᖺ䠏䠊ᅛయ໬ቑᖜჾ➼䜈䛾ᛂ⏝౛䞉䝺䞊䝎䜈䛾㐺⏝䞉ᮾⰪ Cᖏ䛷䠍䠓䠐Wฟຊ㐩ᡂ䠄䠉ᙜ᫬ୡ⏺᭱㧗ฟຊ䠉䝥䝺䝇䝸䝸䞊䝇䠅 䠎䠌䠌䠑ᖺ䞉ᮾⰪ Xᖏ䛷䠔䠍䠊䠏Wฟຊ㐩ᡂ䠄䠉ᙜ᫬ୡ⏺᭱㧗ฟຊ䠉䝥䝺䝇䝸䝸䞊䝇䠅 䠎䠌䠌䠒ᖺ䞉ᮾⰪ 䠴ᖏ䛷䝃䞁䝥䝹ฟⲴ㛤ጞ䠎䠌䠌䠒ᖺ䞉Ἀ㟁Ẽ L/SᖏFET䛾ୖᕷィ⏬Ⓨ⾲䠎䠌䠌䠓ᖺ䠎䠊⌧≧䛸௒ᚋ䛾ㄢ㢟䞉䠟ᖏ䚸䠴ᖏ䚸䠄䠧䡑ᖏ䠅䛷䛾ฟຊ䞉⌧ᅾ䛾ಙ㢗ᛶ䛿䠛䞉ྛ♫䛾㛤Ⓨ≧ἣ䞉௒ᚋ䛾ㄢ㢟➼2931

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ᇶᯈ⤖ᬗရ㉁䛜㔜せ䟿㻳㼍㻺㻙㻴㻱㻹㼀㛤Ⓨ䛾ㄢ㢟

Evaluation of Substrate Quality• GaN⮬❧ᇶᯈ䠋᱁Ꮚᩚྜᇶᯈ䛜䛺䛔Ga䛸N䛾⵨Ẽᅽᕪ䛜኱䚸㧗 ᡂ㛗䛜ᚲせ→ 㧗ရ㉁䛺䜶䝢䝍䜻䝅䝱䝹ᡂ㛗䠄⤖ᬗᡂ㛗䠅䛜㞴䛧䛔• ໬Ꮫⓗ䚸ᶵᲔⓗ䛻Ᏻᐃ䛷㓟䞉䜰䝹䜹䝸䛻䜋䛸䜣䛹⁐䛡䛺䛔→ 䝕䝞䜲䝇సᡂ䛜㞴䛧䛔

Surface morphology of epi HEMTs
on 2 inch epitaxial wafer image• 㟁ὶ䝁䝷䝥䝇⌧㇟䠄㧗㟁ᅽ༳ຍ䛷䝗䝺䜲䞁㟁ὶ䛜ῶᑡ䠅Superimposed
fabricated device→ DC≉ᛶ䛛䜙ண᝿䛥䜜䜛ฟຊ䛜ᚓ䜙䜜䛺䛔• 㧗ฟຊᐦᗘ 䠙 ⇕ᐦᗘ䛜㧗䛔䜲䞁䝢䞊䝎䞁䝇䛜኱䛝䛟␗䛺䜛→ ⇕タィ䚸ᅇ㊰タィ䛻ᕤኵ䛜ᚲせMicroscope Image ofconcentrated defect area

Defects concentrated area A and B
Gate leakage current devices areshown in square.

Box plot of gate leakage current comparing A,B area and other area

Presented byK. Matsushita, et al. (Toshiba Corp)at
COMPOUND SEMICONDUCTOR MANTECH
2005 International Conference on Compound
Semiconductor MANufacturing TECHnology
New Orleans, Louisiana, U.S.A.
April 1111-14, 2005

Improving an epitaxial layer quality
is critically important to realize target devices
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㻭㼘㻳㼍㻺㻛㻳㼍㻺 㻴㻱㻹㼀 ヨస౛20070816-1

䜎䛰᏶඲䛻䛿ゎỴ䛧䛶䛔䛺䛔ㄢ㢟䞊㟁ὶ䝁䝷䝥䝇㟁ᅽ䜢༳ྍ䛩䜛䛸㟁ὶ䛜ῶᑡ㟁ὶ㟁ᅽ䠏䡮䢙䡽䠯䡅䠟ᇶᯈ3335

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௒ᚋ㢧ᅾ໬䛧䛭䛖䛺ㄢ㢟䠉⇕タィ䠎䠉㟁ὶ䝁䝷䝥䝇䠉ప㟁ᅽᇦ䛷䛿ᨵၿ䛥䜜䛶䛝䛯䛜䞉䞉䞉Ⓨ⇕ᐦᗘ䛸⣲Ꮚฟຊ䛾㛵ಀ䝕䝞䜲䝇ฟຊ㼇㼃㼉

Vd_stress70V䜎䛷䛿㟁ὶ䝁䝷䝥䝇ᑠ㻤㻜㻜

Vd_stress100V䛷ᛴ⃭䛻㟁ὶ䝁䝷䝥䝇ቑຍ㻜㻚㻝㻌䚷㻿ᖏ㻌䚷㻯ᖏ㻌䚷㼄ᖏ㻢㻜㻜㻠㻜㻜㻞㻜㻜㻵㼐㼟㻌㼇㻭 㼉㻜㻚㻜㻤㻜㻜㻚㻜㻢㻜㻝㻜㻜㻜㻞㻜㻜㻜㻟㻜㻜㻜㻠㻜㻜㻜Ⓨ⇕ᐦᗘ㼇㼃㻛㼏㼙㻞㼉㻜㻚㻜㻠㻜㻚㻜㻞

㻜
㻜

㻞㻜㻠㻜

㻢㻜㻤㻜㻝㻜㻜

㼂㼐㼟㻌㼇㼂㼉

䖃㧗ฟຊ䛷䛒䜛GaN䛿Ⓨ⇕ᐦᗘ䛜㧗䛟䚸⿦⨨䛷䛾෭༷䛜ㄢ㢟䛷䛒䜛䚹䛭䛾䛯䜑䚸䝏䝑䝥ຠ⋡䛾ྥୖཬ䜃෭༷⬟ຊ䛾ྥୖ䛜ᚲせ䛷䛒䜛䚹䖃Ⓨ⇕ᐦᗘ䛻䛴䛔䛶෭༷⬟ຊ䛜ྠ➼䛷䛒䜛ሙྜ䚸Sᖏ䛾ฟຊ䛿Xᖏ䛾⣙4䡚5ಸ⛬ᗘ䛜෭༷⬟ຊ䛻䜘䜛㝈⏺䛛䚹3638

20070816-1

20070816-1

௒ᚋ㢧ᅾ໬䛧䛭䛖䛺ㄢ㢟䠉⇕タィ䠍䠉䝟䝑䜿䞊䝆䞁䜾䛻䜘䜛Ⓨ⇕ᐦᗘⓎ⇕㒊䝧䜰䝏䝑䝥䛻䛚䛡䜛Ⓨ⇕ᐦᗘ㻌 㻌 㻌 㻌 㻌 㻌ᴫせ䠍䠊㧗ฟຊ໬䛾䛯䜑䛻
䞉ఱᨾGaN䛺䛾䛛䠄 䠣䠽䠝䡏 䡒䡏 䠣䠽䠪䠅

⣙3800W/cm2GaN 䝰䝆䝳䞊䝹ᾮ෭᪉ᘧ䡚Ἓ㦐䝟䝑䜿䞊䝆⣙110 W/cm2⣙110W/cm2
᭷ຠᨺ⇕㒊
⣙1300W/cm2✵෭᪉ᘧ⣙ 4 W/cm2⣙ 80 W/cm2

Pentium4䝥䝻䝉䝑䝃䛿䚸ᨺ⇕㠃䛾ᣑ኱䚸ᑓ⏝䝤䝻䜰౑⏝➼䛾ᕤኵ䛜䛥䜜䛶䛚䜚✵෭㝈⏺䛸ゝ䜟䜜䛶䛔䜛䚹㻌 㻌㻌㻌㻌㻌Ⓨ⇕ᐦᗘ W/cm2

䝏䝑䝥⣙3800 W/cm2Ⓨ⇕ᐦᗘ䛜㧗䛟෭༷
䛻ㄢ㢟

㻌㻌㻌

㻌㻌㻌㻌

ㄢ㢟

㻌㻌㻌㻌㻌
㻌 㻌 㻌 㻌㻌㻌 㻌 㻌 㻌 㻌 㻌䠎䠊⌧≧䛸௒ᚋ䛾ㄢ㢟䞉䠟ᖏ䚸䠴ᖏ䚸䠄䠧䡑ᖏ䠅䛷䛾ฟຊ䞉⌧ᅾ䛾ಙ㢗ᛶ䛿䠛䞉ྛ♫䛾㛤Ⓨ≧ἣ䞉௒ᚋ䛾ㄢ㢟➼䠏䠊ᅛయ໬ቑᖜჾ➼䜈䛾ᛂ⏝౛䞉䝺䞊䝎䜈䛾㐺⏝⌧≧ᾮ෭᪉ᘧ䛻䜘䜛෭༷ᢏ⾡䛷䛿䚸䝰䝆䝳䞊䝹ฟຊCᖏ70W
䠄᭷ຠᨺ⇕㒊䛻䛚䛡䜛Ⓨ⇕ᐦᗘ䛿⣙600W/cm2䠅䛜㝈⏺䛛
3739

20070816-1

20070816-1ྛ✀↓⥺䝅䝇䝔䝮䛸䠣䠽䠪⣲Ꮚ฼⏝ศ㔝GaN䛺䜙㧗ฟຊ䛷ᑠᆺ໬䛜ྍ⬟

GaN䛿㧗࿘Ἴ䞉㧗ฟຊ䝟䝽䞊䜰䞁䝥䛻㐺䛧䛯ᮦᩱᮦᩱ䛾䝫䝔䞁䝅䝱䝹䛜㧗䛔㟁ຊᐦᗘ䠖 GaAs䛾⣙䠍0ಸ㟁ຊᐦᗘ䠖኱㧗ฟຊᑠᆺ໬
40

42

20070816-1GaN䛾≉ᚩ
GaN䛾≉ᚩ䠉ᕥグ䜢ά䛛䛩䛯䜑䛻䠉ᙜ♫䛾⪃䛘᪉䠎䠌䠍䠌ᖺ䛻䛿䠍䠌䠌൨෇つᶍ䛾ᕷሙ䛻ฟຊ㟁ຊ䠄㼃㻕㻡㻜㻜㧗ฟຊᑠᆺ㧗࿘Ἴᩘ䛷䛿䝟䝑䜿䞊䝆䛾኱䛝䛥䛻ไ⣙䛜䛒䜛㧗࿘Ἴᩘᖏ䛷䛾㧗ฟຊ
GaAs 䛷䛿㝈⏺

㻌㧗ฟຊ໬䚷䚷䚷䚷䚷䚷䚷䚷䚷㻝㻜㻜㻳㼍㻺䚷㻯ᖏ䠔䠌㼃㻛䠕㻜㼃⾨ᫍ㏻ಙ䠋ྛ✀䝺䞊䝎䞊⏝㏵䠖䚷䚷㼀㼃㼀㻭䠋䝬䜾䝛䝖䝻䞁䛾ᅛయ໬䛻䜘䜛㟂せᣑ኱㻳㼍㻺

㻡㻜䚷
㧗ຠ⋡໬
䚷
䝰䝆䝳䞊䝹໬

㻝㻜㻷㼡ᖏ䠏䠌㼃

䝭䝸Ἴᖏ㻹㻹㻵㻯➼䚷ྛ♫䠨ᖏ䠄2GHz䠅䠟ᖏ䠄4䠟ᖏ䠄4䡚8GHz䠅
8GHz䠅

ᦠᖏᇶᆅᒁ

X/Kuᖏ䠄
8䡚18GHz䠅
X/Kuᖏ䠄818GHz䠅 䠚50W

⇕タィ䚸ᨺ⇕䛜ㄢ㢟䝺䞊䝎⏝㻝

䠚100W㏻ಙᇶᆅᒁ䚸⾨ᫍ㏻ಙ⏝㻳㼍㻭㼟㻡ᙜ♫䛾䝍䞊䝀䝑䝖䚷䚷䠣䠽䠪䛾≉㛗䛜ά䛛䛫䜛䚸䇾ᙉ䜏䇿䛾࿘Ἴᩘᖏ
41

20070816-1

䐟㻳㼍㻺䝬䜲䜽䝻Ἴ⣲Ꮚ䛾᪩ᮇၟရ໬㧗ฟຊ໬䐠㻳㼍㻭㼟⣲Ꮚ䛾≉ᛶᨵၿ㧗ຠ⋡໬㻳㼍㻭㼟㻌㻲㻱㼀䡏㻳㼍㻭㼟㻲㻱㼀䡏㻳㼍㻺㻳㼍㻭㼟䛾㝈⏺᭤⥺㻜㻚㻝㻼㼛㼕㼚㼠㻙㼠㼛㻙㻼㼛㼕㼚㼠⏝㏵䠖䚷䚷㧗ຠ⋡⣲Ꮚ䚸䢏䡸䢚䡩䡬䢕໬䛾䝙䞊䝈㻼㼛㼕㼚㼠㻙㼠㼛㻙㻼㼛㼕㼚㼠䚸⾨ᫍ㏻ಙ䚸㻵㼀㻿㛵㐃⏝㏵䠖
䚷䚷㻳㼍㻭㼟㻌㻹㻹㻵㻯䚸㻳㼍㻺⣲Ꮚ䛾㟂せ䛜ᣑ኱㻜㻚㻜㻝㻝㻞㻡㻝㻜㻞㻜㻡㻜㻝㻜㻜࿘Ἴᩘ䠄㻳㻴䡖䠅43

20070816-1

20070816-1

ᮾⰪ䛾㧗ฟຊ䠢䠡䠰㛤Ⓨᐇ⦼ཬ䜃㛤Ⓨィ⏬

䝺䞊䝎㏦ಙᶵ䛾ᅛయ໬• 㟁Ꮚ⟶䠄䝬䜾䝛䝖䝻䞁䠈䜽䝷䜲䝇䝖䝻䞁➼䠅䜢⏝䛔䛯㏦ಙᶵ䛻䛚䛔䛶䛿䚸㒊ရᯤῬ䠈ಙ㢗ᛶ䛾ၥ㢟䛛䜙䚸༙ᑟయ⣲Ꮚ䛻⨨䛝᥮䛘䜛ᅛయ໬䛜㐍䜣䛷䛔䜛䚹䝬䜲䜽䝻Ἴᖏ䛾䝺䞊䝎䛷䛿䚸㧗ฟຊ༙ᑟయ⣲Ꮚ䛾㛤Ⓨ䛜㐍䜣䛷䛔䜛ప࿘Ἴᩘᖏ䠄~䠐GH䡖䠅䛷䛿ᅛయ໬䛜㐍䜣䛷䛔䜛䛜䚸㧗࿘Ἴᩘᖏ䠄䠐GH䡖~䠅䛷䛿༙ᑟయ⣲Ꮚ䛾㧗ฟຊ໬䛜㞴䛧䛛䛳䛯䛯䜑䚸ᐇ⏝౛䛜ᑡ䛺䛔䚹 䠨䡚䠯ᖏ 䠖䠍䠑䠌䠳⣭㟁ຊ䠢䠡䠰→ 䠐䠌䠌䠳⣭㟁ຊ䠢䠡䠰䠑䠌䠌䠳⣭㟁ຊ䠢䠡䠰䠄䠣䠽䠪䠅→ 䠑䠌䠌䠳⣭㟁ຊ䠢䠡䠰䠄䠣䠽䠪䠅䠟ᖏ䠎䠌䠌䠓ᖺᗘ䝸䝸䞊䝇ணᐃ䠎䠌䠌䠕䠎䠌䠌䠕ᖺᖺᗘ䝸䝸䞊䝇ணᐃᗘ䝸䝸䞊䝇ணᐃ䠖 䠕䠌䠳⣭㟁ຊ䠢䠡䠰䠄䠆䠅→ 䠍䠑䠌䠳⣭㟁ຊ䠢䠡䠰䠄䠣䠽䠪䠅ప࿘Ἴᩘᖏ㸦㹼㸲*+]㸧

䠎䠌䠌䠔䠎䠌䠌䠔ᖺᗘ䝸䝸䞊䝇ணᐃᐇ⏝౛㸸✵㧗࿘Ἴᩘᖏ㸦㸲*+]㹼㸧

┘ど࣮ࣞࢲᐇ⏝౛㸸⯟✵ᶵᦚ㍕⏝Ẽ㇟࣮ࣞࢲ 䠴䡚䠧䡑ᖏ䠖 䠏䠌䠳⣭㟁ຊ䠢䠡䠰䠄䠆䠅→ 䠑䠌䠳⣭㟁ຊ䠢䠡䠰䠄䠣䠽䠪䠅䠄X䠑䠌䠳⣭㟁ຊ䠢䠡䠰䠄䠣䠽䠪䠅䠄Xᖏ䠅 䠎䠌䠌䠓ᖺᗘ䝸䝸䞊䝇䠄ὀ䠅→ 䠑䠌䠳⣭㟁ຊ䠢䠡䠰䠄䠣䠽䠪䠅䠄Kuᖏ䠅 䠎䠌䠌䠓ᖺᗘ䝸䝸䞊䝇ணᐃ䠑䠌䠳⣭㟁ຊ䠢䠡䠰䠄䠣䠽䠪䠅䠄Kuᖏ䠅 䠩䠩䠥䠟

✵୰⥺⿦⨨*D$V༙ᑟయࢆ᥇⏝䠖 䠴ᖏ䠒䠳⣭䠩䠩䠥䠟䠄ὀ䠅 䠎䠌䠌䠒ᖺ䠍䠍᭶ 䛂䠴ᖏ䠔䠌䠳⣭䠣䠽䠪 䠢䠡䠰䛃 Ꮫ఍䠄⡿ᅜ䠅Ⓨ⾲䠆䠖ᴗ⏺᭱㧗ฟຊ
䠄2007.6.21⌧ᅾ䠅⡿ᅜ+RQH\ZHOO♫ࣃ࣮࣡࢔ࣥࣉࣘࢽࢵࢺ

5'5

㏦ಙ⿦⨨444620070816-1

20070816-1

䝺䞊䝎䜈䛾㐺⏝౛䝺䞊䝎䜈䛾㐺⏝౛䠍䠊Cᖏᅛయ໬Ẽ㇟䝺䞊䝎䠖 䠣䠽䠝䡏 䠕䠌WFET䠍䠊Cᖏᅛయ໬Ẽ㇟䝺䞊䝎䠖 䠣䠽䠝䡏 䠕䠌WFET

䠎䠊Xᖏᅛయ໬Ẽ㇟䝺䞊䝎䠖䠎䠊Xᖏᅛయ໬Ẽ㇟䝺䞊䝎䠖䠣䠽䠪 䠑䠌WFET

䠏䠊ᦚ㍕⏝⯟ἲẼ㇟䝺䞊䝎䠖 䠣䠽䠪 䠑䠌WFET䠄㐺⏝ணᐃ䠅䠣䠽䠪 䠑䠌WFET䠏䠊ᦚ㍕⏝⯟ἲẼ㇟䝺䞊䝎䠖 䠣䠽䠪 䠑䠌WFET䠄㐺⏝ணᐃ䠅

4547

20070816-1

20070816-1

㻥㻜㼃㻌㻳㼍㻭㼟㻌㻲㻱㼀㻥㻜㻣㻡㻠㻡

㻢㻜㻠㻜㻠㻡㻟㻡

㻟㻜

㻟㻜㻝㻡

㻞㻡

㻜

㻰㼞㼍㼕㼚㻌㻱㼒㼒㼕 㼏㼕 㼑㼚㼏㼥䠄䠂 䠅㻼㼑㼍㼗㻌㻻㼡㼠㼜㼡㼠㻌㻼㼛㼣㼑㼞㻔㼐㻮㼙㻕㻡㻜㻼㼑㼍㼗㻌㻻㼡㼠㼜㼡㼠㻌㻼㼛㼣㼑㼞㻔㼐㻮㼙㻕

㻡㻡

40.5%

㻢㻜㻡㻜㻡㻤

㻠㻡

㻡㻢

㻠㻜

㻡㻠㻟㻡

㻡㻞

㻟㻜

㻡㻜㻞㻡

㻠㻤

㻞㻜

㻠㻢㻝㻡

㻠㻠

㻝㻜

㻠㻞

㼀㼛㼠㼍㼘㻌㻱㼒㼒㼕㼏㼕㼑㼚㼏㼥㻔㻑㻕

57.49dBm(561W)

49.6dBm(91W)

㻡

15.1%

㻠㻜㻜㻝㻜㻝㻞㻝㻠㻝㻢㻝㻤㻞㻜㻞㻞㻞㻠㻞㻢㻞㻤㻟㻜㻟㻞㻼㼑㼍㼗㻌㻵㼚㼜㼡㼠㻌㻼㼛㼣㼑㼞㻔㼐㻮㼙㻕㻞㻜㻞㻡㻟㻜㻟㻡㻠㻜㻼㼑㼍㼗㻌㻵㼚㼜㼡㼠㻌㻼㼛㼣㼑㼞㻔㼐㻮㼙㻕㻠㻡㻻㼡㼠㼜㼡㼠㻌㻼㼛㼣㼑㼞㻌㼍㼚㼐㻌㼀㼛㼠㼍㼘㻌㻱㼒㼒㼕㼏㼕㼑㼚㼏㼥㻌㼛㼒㻌㼠㼔㼑㻌㻿㻿㻼㻭㻌㼍㼠㻌㻡㻚㻟㻡㻳㻴㼦

Input/Output characteristics of the90W FET㻯㻙㻮㼍㼚㼐㻌㻡㻜㻜㼃㻌㻿㼛㼘㼕㼐㻙㻿㼠㼍㼠㼑㻌㻼㼛㼣㼑㼞㻌㻭㼙㼜㼘㼕㼒㼕㼑㼞㻌㻔㻿㻿㻼㻭㻕㼒㼛㼞㻌㻺㼑㼣㻌㼃㼑㼍㼠㼔㼑㼞 㻾㼍㼐㼍㼞

48

50

20070816-1

20070816-1>57dBm(500W)@5.2䡚
@5.2䡚5.4GHz㻢㻜㻼㼑㼍㼗㻌㻻㼡㼠㼜㼡㼠㻌㻼㼛㼣㼑㼞㻔㼐㻮㼙㻕㻡㻥㻡㻤㻡㻣㻡㻢㻡㻡
㻡㻠
㻡㻟㻡㻞
㻡㻝
㻡㻜
㻡㻚㻝

90W GaAs FETC-Band 500W SSPA㻡㻚㻞

㻡㻚㻟

㻡㻚㻠

㻡㻚㻡

㻲㼞㼑㼝㼡㼑㼚㼏㼥䠄㻳㻴㼦䠅→64pcs in final stage
for 3.5kW Transmitter㻻㼡㼠㼜㼡㼠㻌㻮㼍㼚㼐㼣㼕㼐㼠㼔㻌㼛㼒㻌㼠㼔㼑㻌㻿㻿㻼㻭
4951

20070816-1

20070816-1

䠣䠽䠪 Xᖏ䠑䠌WFET
䠄TGI8596ᖏ䠑䠌WFET䠄TGI8596-50)
FEATURES H IG H P O W E RP o u t= 4 7 .0 d B m a t P in = 4 1 .0 d B m
 H IG H G AIN
G L = 9 .0 d B a t 8 .5 G H z to 9 .6 G H z

 BRO AD BAND INTERNALLY M ATCHED HEM T
H E R M E TIC ALL Y SE ALE D P AC K AG E

R F P E R F O R M A N C E S P E C IF IC A T IO N S( T a = 25°C )C H AR AC TE R IS TIC S

SYM BOLU N IT

M IN .

TY P .

O u tp u t P o w e r a t P in = 4 1 d B mP outdBm

4 6 .04 7 .0

L in e r G a in

GLdB8 .09 .0

㸫

D ra in C u rre n t

ID S 14 .5TBD

G a in F la tn e s sΔG㸫

± 0 .8P o w e r A d d e d E ffic ie n c y

η add

C h a n n e l T e m p e ra tu re R is eΔTch

C O N D ITIO N S

V D S= 24V
f = 8 .5 to 9 .6 G H z

AdB%(V D S X ID S + P in – P ou t)X R th (c-c )°C㸫㸫M AX .
㸫

35

㸫

㸫

110

㸫

㸫

P A C K A G E O U T L IN E ( 7- A A 0 4 A )U n it in m mG ate
S ou rce
D rain19inch 㽢1

19inch 㽢2㻷㼘㼥㼟㼠㼞㼛㼚㻌㼠㼞㼍㼚㼟㼙㼕㼠㼠㼑㼞㻿㼛㼘㼕㼐㻙㼟㼠㼍㼠㼑㻌㼠㼞㼍㼚㼟㼙㼕㼠㼠㼑㼞䞉Smaller䞉More reliable䞉Reduced occupied frequency
bandwidth

H A N D L IN G P R E C A U T IO N S FO R P A C K A G E M O D E L
S o ld e rin g iro n s h o u ld b e g ro u n d e d a n d th e o p e ra tin g tim e s h o u ld n o t e x c e e d 1 0 s e c o n d s a t 2 6 0 °C .

5254

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䠣䠽䠪 㼄ᖏ䠑䠌䠳㻲㻱㼀≉ᛶ౛䝺䞊䝎䜈䛾㐺⏝౛䠍䠊Cᖏᅛయ໬Ẽ㇟䝺䞊䝎䠖 䠣䠽䠝䡏 䠕䠌WFET䠣䠽䠪 䠑䠌WFET

21.5
䡉䡉

12.9䡉䡉䠏䠊ᦚ㍕⏝⯟ἲẼ㇟䝺䞊䝎䠖 䠣䠽䠪 䠑䠌WFET䠄㐺⏝ணᐃ䠅㻝㻢

Pout=50W

㻠㻤㻝㻠㻠㻢㻝㻞㻠㻠㻝㻜㻠㻞㻤㻠㻜㻢㻟㻤㻠㻟㻢㻞㻟㻠㻜㻟㻞㻙㻞㻟㻜㻙㻠㻞㻡㻞㻣㻞㻥㻟㻝㻟㻟㻼㼛㼡㼠

53

䡉A, A

䠎䠊Xᖏᅛయ໬Ẽ㇟䝺䞊䝎䠖

䡀Bm

㻡㻜

㻟㻡㻟㻣㻵㼐㼟㻟㻥㻵㼓㼟㻠㻝㻠㻟㻠㻡

䡀Bm

55

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㼄ᖏ㏦ಙᶵ⏝㻞㻡㻜㼃⣭㻳㼍㻺㏦ཷಙᶵ䛾౛Ẽ㇟䝺䞊䝎(11᭶⣡ධணᐃ䠅䛻䛶〇ရ໬䛻䛶〇ရ໬Ẽ㇟䝺䞊䝎(11᭶⣡ධணᐃ䠅• ⌧ᅾ䚸㜵⾨┬ྥ䛡䛸䛧䛶౑⏝䛥䜜䛶䛔䜛⯟✵ᶵᦚ㍕⏝Ẽ㇟䝺䞊䝎䛿䚸㏦ಙ⟶䛸䛧䛶䝬䜾䝛䝖䝻䞁䜢⏝䛔䛶䛚䜚䚸㒊ရᯤῬ䠈ಙ㢗ᛶ䛾ၥ㢟䜢ᢪ䛘䛶䛔䜛䛯䜑䚸㏦ಙᶵ䛾ᅛయ໬䜢ᥦ᱌䛧䛶䛔䜛䚹• 䝬䜾䝛䝖䝻䞁䜢䠣䠽䠪༙ᑟయ䜢⏝䛔䛯ᅛయ໬㏦ಙ䝰䝆䝳䞊䝹䛻⨨䛝᥮䛘䜛䛣䛸䛻䜘䜚䚸ಙ㢗ᛶ䠈⥔ᣢᩚഛᛶ䜢ᨵၿ䛩䜛䛸䛸䜒䛻䚸㟁Ἴἲᨵṇᚋ䛾᪂䝇䝥䝸䜰䝇つไ䜈䛾ᑐᛂ䜒ྍ⬟䛸䛩䜛䚹• ༙ᑟయ⣲Ꮚ䛸䛧䛶ᚑ᮶䛾GaAs䛷䛿䛺䛟GaN䜢౑⏝䛩䜛䛣䛸䛷䚸㏦ಙ㟁ຊ䜢ቑຍ䛩䜛䛣䛸䛜䛷䛝䜛䚹䜎䛯䚸䛣䛾ᅛయ໬䛿䝬䝸䞁䝺䞊䝎➼ᑠᆺ䛾㧗࿘Ἴᩘᖏ䝺䞊䝎䛻䜒㐺⏝ྍ⬟䛷䛒䜛䚹GaN䝰䝆䝳䞊䝹䛾ㅖඖ⾲࿘Ἴᩘ

Xᖏ䠄ᖏᇦ500MHz䠅ฟຊ㟁ຊ

250W䝢䞊䜽

฼ᚓ25dB㟁※㟁ᅽ+35V䠋-5Vᑍἲ䠄〇ရ᫬䠅

150mm㽢150mm㽢45mm

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㜵⾨┬ྥ䛡⯟✵ᶵᦚ㍕⏝Ẽ㇟䝺䞊䝎䛾ᅛయ໬䠉ணᐃ䠉

䠣䠽䠪㏦ཷಙᶵ䛾ㅖඖ⾲࿘ἼᩘXᖏ䠄ᖏᇦ500MHz䠅ฟຊ㟁ຊ䠍䠒䠒W௨ୖ

NF

5dB௨ୗ

㟁※㟁ᅽDC48Vᑍἲ䠄〇ရ᫬䠅

214mm㽢450mm㽢153mm

ᅛయ໬㏦ಙ䝰䝆䝳䞊䝹䠄䠣䠽䠪䠅㏦ཷಙᶵ䠄ᅛయ໬䠅

56

58

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䝺䞊䝎䜈䛾㐺⏝౛
䠍䠊Cᖏᅛయ໬Ẽ㇟䝺䞊䝎䠖 䠣䠽䠝䡏 䠕䠌WFET
䠎䠊Xᖏᅛయ໬Ẽ㇟䝺䞊䝎䠖䛂ᅛయ໬ቑᖜჾ⏝㟁ຊ㻲㻱㼀䛾㛤Ⓨ≧ἣ䛃䠉㟁Ἴ⯟ἲ◊✲఍➨஧ᅇ◊✲఍㈨ᩱ䠉䠣䠽䠪 䠑䠌WFET

䠏䠊ᦚ㍕⏝⯟ἲẼ㇟䝺䞊䝎䠖 䠣䠽䠪 䠑䠌WFET䠄㐺⏝ணᐃ䠅ึ∧ᖹᡂ㸯㸷ᖺ㸶᭶㸱㸯᪥ᰴᘧ఍♫ ᮾ Ⱚ ♫఍ࢿࢵࢺ࣮࣡ࢡ࢖ࣥࣇࣛ♫ᑠྥᕤሙ ࣐࢖ࢡࣟἼᢏ⾡㒊ࠛ ᕝᓮᕷᖾ༊ᑠྥᮾⰪ⏫
7(/ )$;

5759