Curriculum Vitae

NTT Basic Research Laboratories
3-1 Morinosato Wakamiya, Atsugi
Kanagawa, Japan 243-0198

Akira Fujiwara

http://www.brl.ntt.co.jp/people/afuji/index.html
Born in March 1967 in Tokyo, Japan
Research Interests• Physics and application of low-dimensional structures• Silicon nanostructures and their application to nanodevices• Single-electron devices and their applications
Education• 1994 Ph.D. in Applied Physics, The University of Tokyo• 1991 M.S. in Applied Physics, The University of Tokyo• 1989 B.S. in Applied Physics, The University of Tokyo
Employment• 2015- Senior Distinguished Scientist, NTT BRL• 2012-2020 Manager of Physical Science Laboratory, NTT BRL• 2007-2015 Distinguished technical member, NTT BRL• 2006-2020 Group leader of Nanodevices Research Group, NTT BRＬ• 1996 NTT Basic Research Laboratories (BRL)• 1994 NTT LSI Laboratories
Professional Activities• 2017.10-2030.9 Science Council of Japan, member• 2016, 2012, 2019
Examiner of Ph. D. thesis, UNSW
• 2014, 2011, 2008 Examiner of Ph. D. thesis, Tokyo Tech.
• 2013.4-2014.3 Visiting Professor, Hokkaido University• 2011.4-2012.3 Japanese Society of Applied Physics(JSAP) Executive Director• 2010.4-2011.3 Japanese Society of Applied Physics(JSAP) Director• 2003.7-2004.7 Guest researcher at the National Institute of Standards andTechnology (NIST), Gaithersburg, MD, USA• 2007.8
Lecturer(Non-Full-time), The University of Tokyo
Awards and Honors• JSAP Fellow, 2020
• IEEE Fellow, 2018
• Prizes for Science and Technology (Research Category), The Commendation for
Science and Technology by the Minister of Education, Culture, Sports, Scienceand Technology (MEXT), 2017
• Japanese Journal of Applied Physics (JJAP) Paper Awards, 2013
• The Young Scientists’ Prize, The Commendation for Science and Technology by
the Minister of Education, Culture, Sports, Science and Technology (MEXT),2006.
• Japanese Journal of Applied Physics (JJAP) Paper Awards, 2006

•••Japanese Journal of Applied Physics (JJAP) Paper Awards, 2003 (1st author)
SSDM (International Conference on Solid State Devices and Materials) Paper
Award, 1999
SSDM (International Conference on Solid State Devices and Materials) Young
Researcher Award, 1998

Committee/International Conference Activities• Co-chair of Silicon Quantum Electronics Workshop, Takamatsu, Aug. 3-4, 2015.
• Co-chair of International Symposium on Nanoscale Transport and Technology
ISNTT 2013, Atsugi, Nov. 17-20 2015.
• Program vice chair of Int. Conf. on Solid State Devices and Materials (SSDM
2014), Tsukuba, Sept. 2014.
• Co-chair of International Symposium on Nanoscale Transport and Technology
ISNTT 2013, Atsugi, Nov. 2013.
• Program vice chair of Int. Conf. on Solid State Devices and Materials (SSDM
2013), Fukuoka, Sept. 2013.
• Program vice chair of APPC12（the 12th Asia Pacific Physics Conference）,
Makuhari, Japan, July, 2013.
• Co-chair of Workshop on Innovative Devices and Systems (WINDS), Hawaii,
USA, Dec. 2-7 2012.
• Special committee of Emerging Research Devices WG, STRJ (Semiconductor
Technology Roadmap Committee of Japan) 2008.10-2016.4
Government Fund• 2023-2025 NEDO Project (Quantum traceable ultrasmall current sensing)• 2018-2022 JSPS KAKENHI S (Quantum Standards and Ultimate Precision
Measurements Based on Single Electrons)• 2011-2014 The Funding Program for Next Generation World-Leading
Researchers (NEXT Program), JSPS
Publications:
[1]

[2]
[3]
[4]

[5]

[6]

N. Ogasawara, A. Fujiwara, N. Ohgushi, S. Fukatsu, Y. Shiraki, Y. Katayama, and R. Ito:
Well-Width Dependence of Photoluminescence Excitation-Spectra in Gaas-Alxga1-Xas
Quantum-Wells, Physical Review B 42, 9562-9565 (1990).
A. Fujiwara, S. Fukatsu, Y. Shiraki, and R. Ito: Resonant Electron-Capture in Algaas/Gaas
Quantum-Well Structures, Institute of Physics Conference Series, 195-198 (1992).
A. Fujiwara, S. Fukatsu, Y. Shiraki, and R. Ito: Observation of Resonant Electron-Capture in
Algaas/Gaas Quantum-Well Structures, Surface Science 263, 642-645 (1992).
S. Fukatsu, H. Yoshida, A. Fujiwara, Y. Takahashi, Y. Shiraki, and R. Ito: Spectral Blue Shift of
Photoluminescence in Strained-Layer Si1-Xgex/Si Quantum-Well Structures Grown by Gas-Source Si
Molecular-Beam Epitaxy, Applied Physics Letters 61, 804-806 (1992).
S. Fukatsu, H. Yoshida, N. Usami, A. Fujiwara, Y. Takahashi, Y. Shiraki, and R. Ito: SystematicBlue Shift of Exciton Luminescence in Strained Si1-Xgex/Si Quantum-Well Structures Grown by Gas
Source Silicon Molecular-Beam Epitaxy, Thin Solid Films 222, 1-4 (1992).
S. Fukatsu, H. Yoshida, N. Usami, A. Fujiwara, Y. Takahashi, Y. Shiraki, and R. Ito: Quantum Size
Effect of Excitonic Band-Edge Luminescence in Strained Si1-Xgex/Si Single Quantum-Well
Structures Grown by Gas-Source Si Molecular-Beam Epitaxy, Japanese Journal of Applied Physics

Part 2-Letters 31, L1319-L1321 (1992).
[7]
S. Fukatsu, N. Usami, H. Yoshida, A. Fujiwara, Y. Takahashi, Y. Shiraki, and R. Ito: Intense
Photoluminescence from Strained Si1-Xgex/Si Quantum-Well Structures, Journal of Crystal Growth127, 489-493 (1993).
[8]
A. Fujiwara, S. Fukatsu, and Y. Shiraki, in Gallium Arsenide and Related Compounds 1993,（1994), Vol. 136, p. 245-248.
[9]
S. Fukatsu, A. Fujiwara, K. Muraki, Y. Takahashi, and Y. Shiraki: Time-of-Flight Measurement ofCarrier Transport and Carrier Collection in Strained Si1-Xgex/Si Quantum-Wells, Journal of Vacuum
Science & Technology B 12, 1156-1159 (1994).
[10] K. Muraki, Y. Takahashi, A. Fujiwara, S. Fukatsu, and Y. Shiraki: Enhancement of Free-to-Bound
Transitions Due to Resonant Electron-Capture in Be-Doped Algaas/Gaas Quantum-Wells, Solid-StateElectronics 37, 1247-1250 (1994).
[11] A. Fujiwara, K. Muraki, S. Fukatsu, Y. Shiraki, and R. Ito: Enhancement of Nonradiative
Recombination Due to Resonant Electron-Capture in Alxga1-Xas/Gaas Quantum-Well Structures,
Physical Review B 51, 14324-14329 (1995).
[12] A. Fujiwara, Y. Takahashi, S. Fukatsu, Y. Shiraki, and R. Ito: Resonant Electron-Capture in
Alxga1-Xas/Alas/Gaas Quantum-Wells, Physical Review B 51, 2291-2301 (1995).
[13] K. Muraki, A. Fujiwara, S. Fukatsu, Y. Shiraki, and Y. Takahashi: Evidence for resonant electron
capture and charge buildup in GaAs/AlxGa1-xAs quantum wells, Physical Review B 53, 15477-15480(1996).
[14] A. Fujiwara, Y. Takahashi, K. Murase, and M. Tabe: Time-Resolved Measurement of Single-Electron
Tunneling in a Si Single-Electron Transistor with Satellite Si Islands, Applied Physics Letters 67,
2957-2959 (1995).
[15] Y. Takahashi, A. Fujiwara, M. Nagase, H. Namatsu, K. Kurihara, K. Iwadate, and K. Murase: Sisingle-electron transistors on SIMOX substrates, Ieice Transactions on Electronics E79C, 1503-1508(1996).
[16] Y. Takahashi, S. Horiguchi, A. Fujiwara, and K. Murase: Co-tunneling current in very small Si
single-electron transistors, Physica B 227, 105-108 (1996).
[17] A. Fujiwara, Y. Takahashi, and K. Murase: Observation of single electron-hole recombination andphoton-pumped current in an asymmetric Si single-electron transistor, Physical Review Letters 78,
1532-1535 (1997).
[18] A. Fujiwara, Y. Takahashi, H. Namatsu, K. Kurihara, and K. Murase: Suppression of effects ofparasitic metal-oxide-semiconductor field-effect transistors on Si single-electron transistors, Japanese
Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 37, 3257-3263(1998).
[19] M. Nagase, A. Fujiwara, K. Yamazaki, Y. Takahashi, K. Murase, and K. Kurihara: Si nanostructures
formed by pattern-dependent oxidation, Microelectronic Engineering 42, 527-530 (1998).
[20] S. Sasaki, K. Tsubaki, S. Tarucha, A. Fujiwara, and Y. Takahashi: Observation of shot noise
suppression at the peaks of Coulomb oscillations, Solid-State Electronics 42, 1429-1431 (1998).
[21] Y. Takahashi, A. Fujiwara, and S. Murase: Quantized conductance in a small one-dimensional Si wireon a thin silicon-on-insulator substrate fabricated using SiN-film-masked oxidation, Semiconductor
Science and Technology 13, 1047-1051 (1998).
[22] Y. Takahashi, A. Fujiwara, K. Yamazaki, H. Namatsu, K. Kurihara, and K. Murase: Si memory device
operated with a small number of electrons by using a single-electron-transistor detector, Electronics
Letters 34, 45-46 (1998).
[23] K. Yamazaki, A. Fujiwara, Y. Takahashi, H. Namatsu, and K. Kurihara: Sub-10-nm overlay accuracy
in electron beam lithography for nanometer-scale device fabrication, Japanese Journal of Applied
Physics Part 1-Regular Papers Short Notes & Review Papers 37, 6788-6791 (1998).
[24] A. Fujiwara, Y. Takahashi, and K. Murase: Asymmetric tunnel barrier in a Si single-electron transistor,
Microelectronic Engineering 47, 197-199 (1999).

[25] A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase:
Double-island single-electron devices - A useful unit device for single-electron logic LSI's, Ieee
Transactions on Electron Devices 46, 954-959 (1999).
[26] Y. Takahashi, A. Fujiwara, M. Nagase, H. Namatsu, K. Kurihara, K. Iwadate, and K. Murase: Silicon
single-electron devices, International Journal of Electronics 86, 605-639 (1999).
[27] Y. Takahashi, A. Fujiwara, K. Yamazaki, H. Namatsu, K. Kurihara, and K. Murase: A Si memory
device composed of a one-dimensional metal-oxide-semiconductor field-effect-transistor switch and asingle-electron-transistor detector, Japanese Journal of Applied Physics Part 1-Regular Papers Short
Notes & Review Papers 38, 2457-2461 (1999).
[28] Y. Takahashi, A. Fujiwara, K. Yamazaki, H. Namatsu, K. Kurihara, and K. Murase: Multigate
single-electron transistors and their application to an exclusive-OR gate, Applied Physics Letters 76,
637-639 (2000).
[29] A. Fujiwara and Y. Takahashi: Manipulation of elementary charge in a silicon charge-coupled device,
Nature 410, 560-562 (2001).
[30] H. Inokawa, A. Fujiwara, and Y. Takahashi: Multipeak negative-differential-resistance device by
combining single-electron and metal-oxide-semiconductor transistors, Applied Physics Letters 79,
3618-3620 (2001).
[31] N. M. Zimmerman, W. H. Huber, A. Fujiwara, and Y. Takahashi: Excellent charge offset stability in a
Si-based single-electron tunneling transistor, Applied Physics Letters 79, 3188-3190 (2001).
[32] A. Fujiwara and Y. Takahashi: Si nano-devices using an electron-hole system, Journal De Physique Iv
12, 85-92 (2002).
[33] A. Fujiwara and Y. Takahashi: Mechanism of single-charge detection using electron-hole system in
Si-wire transistors, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review
Papers 41, 1209-1213 (2002).
[34] A. Fujiwara, K. Yamazaki, and Y. Takahashi: Detection of single charges and theirgeneration-recombination dynamics in Si nanowires at room temperature, Applied Physics Letters 80,
4567-4569 (2002).
[35] H. Inokawa, A. Fujiwara, and Y. Takahashi: A merged single-electron transistor andmetal-oxide-semiconductor transistor logic for interface and multiple-valued functions, Japanese
Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 41, 2566-2568(2002).
[36] K. T. Liu, A. Fujiwara, Y. Takahashi, K. Murase, and Y. Horikoshi: Voltage gain of Si single-electrontransistor and analysis of performance of n-metal-oxide-semiconductor type inverter with resistive
load, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 41,
458-463 (2002).
[37] A. Nagase, S. Horiguchi, A. Fujiwara, Y. Ono, K. Yamazaki, H. Namatsu, and Y. Takahashi:
Single-electron devices formed by pattern-dependent oxidation: microscopic structural evaluation,
Applied Surface Science 190, 144-150 (2002).
[38] Y. Takahashi, Y. Ono, A. Fujiwara, and H. Inokawa: Silicon single-electron devices, Journal of
Physics-Condensed Matter 14, R995-R1033 (2002).
[39] A. Fujiwara, S. Horiguchi, M. Nagase, and Y. Takahashi: Threshold voltage of Si single-electrontransistor, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers
42, 2429-2433 (2003).
[40] S. Fukatsu, T. Takahashi, K. M. Itoh, M. Uematsu, A. Fujiwara, H. Kageshima, Y. Takahashi, and K.
Shiraishi: The effect of partial pressure of oxygen on self-diffusion of Si in SiO2, Japanese Journal ofApplied Physics Part 2-Letters 42, L1492-L1494 (2003).
[41] S. Fukatsu, T. Takahashi, K. M. Itoh, M. Uematsu, A. Fujiwara, H. Kageshima, Y. Takahashi, K.
Shiraishi, and U. Gosele: Effect of the Si/SiO2 interface on self-diffusion of Si insemiconductor-grade SiO2, Applied Physics Letters 83, 3897-3899 (2003).
[42] H. Inokawa, A. Fujiwara, and Y. Takahashi: A multiple-valued logic and memory with combined

single-electron and metal-oxide-semiconductor transistors, Ieee Transactions on Electron Devices 50,
462-470 (2003).
[43] M. Nagase, A. Fujiwara, K. Kurihara, and H. Namatsu: Nanometrology of Si nanostructuresembedded in SiO2 using scanning electron microscopy, Japanese Journal of Applied Physics Part
1-Regular Papers Short Notes & Review Papers 42, 318-325 (2003).
[44] M. Nagase, S. Horiguchi, A. Fujiwara, and Y. Takahashi: Microscopic observations of single-electron
island in Si single-electron transistors, Japanese Journal of Applied Physics Part 1-Regular Papers
Short Notes & Review Papers 42, 2438-2443 (2003).
[45] M. Nagase, S. Horiguchi, K. Shiraishi, A. Fujiwara, and Y. Takahashi: Single-electron devices formedby thermal oxidation, Journal of Electroanalytical Chemistry 559, 19-23 (2003).
[46] H. Namatsu, Y. Watanabe, K. Yamazaki, T. Yamaguchi, M. Nagase, Y. Ono, A. Fujiwara, and S.
Horiguchi: Fabrication of Si single-electron transistors with precise dimensions by electron-beamnanolithography, Journal of Vacuum Science & Technology B 21, 1-5 (2003).
[47] H. Namatsu, Y. Watanabe, K. Yamazaki, T. Yamaguchi, M. Nagase, Y. Ono, A. Fujiwara, and S.
Horiguchi: Influence of oxidation temperature on Si single-electron transistor characteristics, Journalof Vacuum Science and Technology B21, 2869 – 2873 (2003).
[48] T. Takahashi, S. Fukatsu, K. M. Itoh, M. Uematsu, A. Fujiwara, H. Kageshima, Y. Takahashi, and K.
Shiraishi: Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions, Journal ofApplied Physics 93, 3674-3676 (2003).
[49] Y. Takahashi, Y. Ono, A. Fujiwara, and H. Inokawa: Development of silicon single-electron devices,
Physica E-Low-Dimensional Systems & Nanostructures 19, 95-101 (2003).
[50] A. Fujiwara, N. M. Zimmerman, Y. Ono, and Y. Takahashi: Current quantization due tosingle-electron transfer in Si-wire charge-coupled devices, Applied Physics Letters 84, 1323-1325(2004).
[51] S. Horiguchi, A. Fujiwara, H. Inokawa, and Y. Takahashi: Analysis of back-gate voltage dependenceof threshold voltage of thin silicon-on-insulator metal-oxide-semiconductor field-effect transistor andits application to Si single-electron transistor, Japanese Journal of Applied Physics Part 1-Regular
Papers Short Notes & Review Papers 43, 2036-2040 (2004).
[52] S. M. Koo, A. Fujiwara, J. P. Han, E. M. Vogel, C. A. Richter, and J. E. Bonevich: High inversion
current in silicon nanowire field effect transistors, Nano Letters 4, 2197-2201 (2004).
[53] K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, and Y. Takahashi: Multifunctional Boolean logic
using single-electron transistors, Ieice Transactions on Electronics E87C, 1809-1817 (2004).
[54] K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, and Y. Takahashi: Multilevel memory using anelectrically formed single-electron box, Applied Physics Letters 85, 1277-1279 (2004).
[55] K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, and Y. Takahashi: Multilevel memory using
single-electron turnstile, Electronics Letters 40, 229-230 (2004).
[56] K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, and Y. Takahashi: Automatic control of oscillation
phase of a single-electron transistor, Ieee Electron Device Letters 25, 31-33 (2004).
[57] K. Takashina, A. Fujiwara, S. Horiguchi, Y. Takahashi, and Y. Hirayama: Valley splitting control in
SiO2/Si/SiO2 quantum wells in the quantum Hall regime, Physical Review B 69 (2004).
[58] K. Takashina, A. Fujiwara, Y. Takahashi, and Y. Hirayama: Resistance spikes induced bygate-controlled valley-splitting in silicon, International Journal of Modern Physics B 18, 3603-3608(2004).
[59] K. Takashina, Y. Hirayama, A. Fujiwara, S. Horiguchi, and Y. Takahashi: A silicon bi-layer system,
Physica E-Low-Dimensional Systems & Nanostructures 22, 72-75 (2004).
[60] N. M. Zimmerman, E. Hourdakis, Y. Ono, A. Fujiwara, and Y. Takahashi: Error mechanisms andrates in tunable-barrier single-electron turnstiles and charge-coupled devices, Journal of Applied
Physics 96, 5254-5266 (2004).
[61] K. Nishiguchi, O. Crauste, H. Namatsu, S. Horiguchi, Y. Ono, A. Fujiwara, Y. Takahashi, and H.
Inokawa: Back-gate effect on Coulomb blockade in silicon-on-insulator trench wires, JapaneseJournal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers 44,
7717-7719 (2005).
[62] Y. Ono, A. Fujiwara, K. Nishiguchi, H. Inokawa, and Y. Takahashi: Manipulation and detection of
single electrons for future information processing, Journal of Applied Physics 97 (2005).
[63] A. Fujiwara, H. Inokawa, K. Yamazaki, H. Namatsu, Y. Takahashi, N. M. Zimmerman, and S. B.
Martin: Single electron tunneling transistor with tunable barriers using silicon nanowire
metal-oxide-semiconductor field-effect transistor, Applied Physics Letters 88 053121 (2006).
[64] K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, and Y. Takahashi: Room-temperature-operating dataprocessing circuit based on single-electron transfer and detection with metal-oxide-semiconductor
field-effect transistor technology, Applied Physics Letters 88 183101 (2006).
[65] K. Takashina, Y. Ono, A. Fujiwara, Y. Takahashi, and Y. Hirayama: Valley polarization in Si(100) at
zero magnetic field, Physical Review Letters 96 236801 (2006).
[66] N. M. Zimmerman, A. Fujiwara, H. Inokawa, and Y. Takahashi: Electrostatically gated Si devices:
Coulomb blockade and barrier capacitance, Applied Physics Letters 89 052102 (2006).
[67] K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, and Y. Takahashi: Long Retention of Gain-Cell
Dynamic Random Access Memory With Undoped Memory Node, IEEE Electron Devices Letters 28
48-50 (2006).
[68] N. M. Zimmerman, B. J. Simonds, A. Fujiwara, Y. Ono, Y. Takahashi, and H. Inokawa: Charge offset
stability in tunable-barrier Si single-electron transistor, Applied Physics Letters 90 033507 (2006).
[69] K. Takashina, Y. Ono, A. Fujiwara, Y. Takahashi, and Y. Hirayama: Intersubband Scattering in
Double-Gate MOSFETs, IEEE Transaction on Nanotechnology 5 430-435 (2006).
[70] W. C .Zhang, K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi, and N. J.
Wu: Transfer and detection of single electrons using metal-oxide-semiconductor
field-effect-transistors, IEICE Trans. Electron. E-90C, No. 5, 943 – 948 (2007).
[71] K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, and Y. Takahashi: Infrared detection with siliconnano-field-effect transistors, Applied Physics Letters 90, 223108 (2007).
[72] Y. Ono, K. Nishiguchi, A. Fujiwara, H. Yamaguchi, H. Inokawa, and Y. Takahashi: Conductancemodulation by individual acceptors in Si nanoscale field-effect transistors
Applied Physics Letters 90, 102106 (2007).
[73] K. Takashina, M. Brun, T. Ota, D. K. Maude, A. Fujiwara, Y. Ono, Y. Takahashi, and Y. Hirayama:
Anomalous resistance ridges along filling factor v = 4i , Phys. Rev. Lett. 99, 036803 (2007).
[74] M. A. H. Khalafalla, Y. Ono, K. Nishiguchi, and A. Fujiwara: Identification of single and coupled
acceptors in silicon nano-field-effect transistors, Applied Physics Letters 91, 263513 (2007).
[75] A. Fujiwara, K. Nishiguchi, and Y. Ono: Nanoampere charge pump by single-electron ratchet using
silicon nanowire metal-oxide-semiconductor field-effect transistor: APPLIED PHYSICS LETTERS 92,
042102 (2008).
[76] K. Nishiguchi, M. Nagase, T. Yamaguchi, A. Fujiwara, and H. Yamaguchi: Low-energy electron
emission using a Si/SiO2/Si cathode for nano-decomposition, Japanese Journal of Applied Physics(accepted).
[77] K. Nishiguchi, Y. Ono, A. Fujiwara, H. Inokawa, and Y. Takahashi : Stochastic data processing circuit
based on single electrons using nano field-effect transistor, APPLIED PHYSICS LETTERS 92, 062105(2008).
[78] H. W. Liu, T. Fujisawa, Y. Ono, H. Inokawa, A. Fujiwara, K. Takashina, and Y. Hirayama:
Pauli-spin-blockade transport through a silicon double quantum dot, Phy. Rev. B 77, 073310 (2008).
[79] H. W. Liu, T. Fujisawa, H. Inokawa, Y. Ono, A. Fujiwara, and Y. Hirayama: A gate-defined siliconquantum dot molecule, APPLIED PHYSICS LETTERS 92, 222104 (2008).
[80] S. Yabuuchi, Y. Ono, M. Nagase, H. Kageshima, A. Fujiwara and E. Ohta: Ferromagnetism ofManganese-Silicide Nanoparticles in Silicon, Japanese Journal of Applied Physics 47, 4487-4490(2008).
[81] S. Yabuuchi, H. Kageshima, Y. Ono, M. Nagase, A. Fujiwara and E. Ohta: Origin of ferromagnetism

of MnSi1.7 nanoparticles, Phy. Rev. B 78, 045307 (2008).
[82] H. Kageshima and A. Fujiwara: First-principles study on inversion layer properties of double-gate
atomically thin silicon channels, APPLIED PHYSICS LETTERS 93, 043516 (2008).
[83] N. M. Zimmerman, W. H. Huber, B. Simonds, E. Hourdakis, A. Fujiwara, Y.Ono, Y. Takahashi, H.
Inokawa, M. Furlan, and M. W. Keller: Why the long-term charge offset drift in Si single-electron
tunneling transistors is much smaller (better) than in metal-based ones: Two-level fluctuator stability,
Journal of Applied Physics 104, 033710 (2008)[84] K. Nishiguchi, C. Koechlin, Y. Ono, A. Fujiwara, H. Inokawa, and H. Yamaguchi:
Single-electron-resolution electrometer based on field-effect transistor, Japanese Journal of Applied
Physics, Vol. 47, pp. 8305–8310(2008).
[85] S. Miyamoto, K. Nishiguchi, Y. Ono, K M. Itoh, and A. Fujiwara: Escape dynamics of a few electrons
in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor,
APPLIED PHYSICS LETTERS 93, 222103 (2008).
[86] K. Nishiguchi and A. Fujiwara: Single-electron counting statistics and its circuit application innanoscale field-effect transistors at room temperature, Nanotechnology 20 175201 (2009).
[87] K. Nishiguchi, N. Clement, T. Yamaguchi, and A. Fujiwara: Si nanowire ion-sensitive field-effecttransistors with a shared floating gate, APPLIED PHYSICS LETTERS 94, 163106 (2009).
[88] Mahboob, K. Nishiguchi, A. Fujiwara, and H. Yamaguchi: Room temperature piezoelectric
displacement detection via a silicon field effect transistor, APPLIED PHYSICS LETTERS 95, 233102(2009).
[89] T. Kaizawa, M. Jo, M. Arita, A. Fujiwara, K. Yamazaki, Y. Ono, H. Inokawa, Y. Takahashi and J.-B.
Choi: Full adder operation based on Si nanodot array device with multiple inputs and outputs,
International Journal of Nanotechonology and Molecular Computation, 1(2), 58-69 (2009).
[90] Y. Niida, K. Takashina, A. Fujiwara, T. Fujisawa, and Y. Hirayama: Spin splitting of upper electronsubbands in a SiO2/Si(100)/SiO2 quantum well with in-plane magnetic field, APPLIED PHYSICSLETTERS 94, 142101 (2009).
[91] K. Takashina, K. Nishiguchi, Y. Ono, A. Fujiwara, T. Fujisawa, Y. Hirayama, and K. Muraki:
Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures, APPLIED PHYSICSLETTERS 94, 142104 (2009).
[92] M. A. H. Khalafalla, Y. Ono, K. Nishiguchi, and A. Fujiwara: Horizontal position analysis of single
acceptors in Si nanoscale field-effect transistors, APPLIED PHYSICS LETTERS 94, 223501 (2009).
[93] Negative Magnetoresitance of a silicon 2DEG under in-plane magnetic field due to spin-splitting ofupper subbands, K. Takashina, Y.Niida, V. Renard, A. Fujiwara and T. Fujisawa, and Y. Hirayama,International Journal of Modern Physics B (IJMPB), 23 pp. 2938-2942 (2009).
[94] T. Kaizawa, M. Arita, A. Fujiwara, K. Yamazaki, Y. Ono, H. Inokawa, Y. Takahashi and J.-B. Choi:
Single-electron device with Si nanodot array and multiple input gates, IEEE Transactions on
nanotechnology, 8(4), 535-541(2009).
[95] M.Jo, T.Kaizawa, M.Arita, A.Fujiwara, Y.Ono, Hi.Inokawa, J.-B.Choi and Y.Takahashi: Fabricationof double-dot single-electron transistor in silicon nanowire, Thin Solid Films, 518, S186-S189 (2010).
[96] S. Miyamoto, K. Nishiguchi, Y. Ono, K. M. Itoh, and A. Fujiwara: Resonant escape over anoscillating barrier in a single-electron ratchet transfer, Phys. Rev. B 82, 033303 (2010).
[97] J. Noborisaka, K. Nishiguchi, H. Kageshima, Y. Ono, and A Fujiwara: Tunneling spectroscopy ofelectron subbands in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors, Appl.
Phys. Lett. 96, 112102 (2010).
[98] H. Kageshima and A. Fujiwara: Dielectric constants of atomically thin silicon channels with double
gate, Appl. Phys. Lett. 96, 193102 (2010).
[99] I. Mahboob, E. Flurin, K. Nishiguchi, A. Fujiwara, and H. Yamaguchi: Enhanced force sensitivity andnoise squeezing in an electromechanical resonator coupled to a nano-transistor, Appl. Phys. Lett. 97,
253105 (2010).
[100]
N. Clément, K. Nishiguchi, A. Fujiwara and D. Vuillaume: One-by-one trap activation in silicon

nanowire transistors, Nature Communications 1 DOI:10.1038/ncomms1092 (2010).
[101]
K. Takashina, M. Nagase, K. Nishiguchi, Y. Ono, H. Omi, A. Fujiwara, T. Fujisawa, and K.
Muraki: Separately contacted monocrystalline silicon double-layer structure with an amorphoussilicon dioxide barrier made by wafer bonding, Semiconductor Science and Technology 25, 125001(2010)[102]
N. Clément, K. Nishiguchi, J. F. Dufreche, D. Guerin, A. Fujiwara, and D. Vuillaume: A silicon
nanowire ion-sensitive field-effect transistor with elementary charge sensitivity, Appl. Phys. Lett. 98,
014104 (2011).
[103]
J. Noborisaka, K. Nishiguchi, Y. Ono, H. Kageshima, and A. Fujiwara: Strong Stark effect inelectroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor
field-effect transistors, Appl. Phys. Lett. 98, 033503 (2011).
[104]
N. Clement, K. Nishiguchi, A. Fujiwara, and D. Vuillaume: Evaluation of a Gate Capacitance in
the Sub-aF Range for a Chemical Field-Effect Transistor With a Si Nanowire Channel, IEEE Trans.
Nanotechnology 10, 1172 (2011).
[105]
K. Takashina, Y. Niida, V. T. Renard, A. Fujiwara, T. Fujisawa, K. Muraki, and Y.Hirayama:
Impact of Valley Polarization on the Resistivity in Two Dimensions, Phys. Rev. Lett. 106, 196403(2011).
[106]
K. Nishiguchi, Y. Ono and A. Fujiwara: Single-electron counting statistics of shot noise innanowire Si metal-oxide-semiconductor field-effect transistor, Appl. Phys. Lett. 98, 193502 (2011).
[107]
I. Mahboob, E. Flurin, K. Nishiguchi, A. Fujiwara, and H. Yamaguchi: Nature Communications
2, 198 doi:10.1038/ncomms1201 (2011).
[108]
Y. Takahashi, M.Jo, T.Kaizawa, Y. Kato, M.Arita, A.Fujiwara, Y.Ono, Hi.Inokawa, andJ.-B.Choi: Si Nanodot Device Fabricated by Thermal Oxidation and Their Applications, KeyEngineering Materials 479 pp.175-183 (2011)[109]
G. Yamahata, K. Nishiguchi, and A. Fujiwara: Accuracy evaluation of single-electron shuttle
transfer in Si nanowire metal-oxide-semiconductor field-effect transistors, Appl. Phys. Lett. 98,
222104 (2011).
[110]
N. Clement, G. Patriarche, K. Smaali, F. Vaurette, K. Nishiguchi, D. Troadec, A. Fujiwara, D.
Vuillaume: Large Array of Sub-10-nm Single-Grain Au Nanodots for use in Nanotechnology, Small,
DOI: 10.1002/smll.201100915 (2011).
[111]
K. Nishiguchi and A. Fujiwara: Single-Electron Stochastic Resonance Using Si Nanowire
Transistors, Jpn. J. Appl. Phys. 50, 06GF04 (2011).
[112]
I. Mahboob, Q. Wilmart, K. Nishiguchi, A. Fujiwara, and H. Yamaguchi: Wide-band idler
generation in a GaAs electromechanical resonator, Phys. Rev. B, 84, 113411 (2011).
[113]
H. Sumikura, K. Nishiguchi, Y. Ono, A. Fujiwara, and M. Notomi: Bound exciton
photoluminescence from ion-implanted phosphorus in thin silicon layers, Optics Express 19, No. 25,
pp. 25255-25262 (2011).
[114]
H. Kageshima and A. Fujiwara: AIP Conf. Proc. (Physics of Semiconductors) 1399, 1997 (2011).
[115]
Y. Ono, Y. Miyazaki, S. Yabuuchi, H. Kageshima, M. Nagase, A. Fujiwara, and E.
Ohta :Significance of the interface regarding magnetic properties of manganese nanosilicide in silicon,
Thin Solid Films 519 8505-8508 (2011).
[116]
T. Goto, H. Inokawa, Y. Ono, A. Fujiwara and K. Torimitsu: Jpn. J. Appl. Phys. 50 pp.
071603-071603-6 (2011).
[117]
M. A. H. Khalafalla, Y. Ono, G. P. Lansbergen, and A. Fujiwara: Low temperature carriertransport in p-channel silicon-on-insulator transistors doped with indium, J. Appl. Phys. 110 014512(2011);[118]
S. Horiguchi and A. Fujiwara: Fluctuation of Average Position of Electrons in Coulomb Island in
Si Single-Electron Transistor, Thin Solid Films, 520 pp. 3349-3353 (2012).
[119]
G. Lansbergen, Y. Ono and A. Fujiwara: Donor based single electron pumps with tunable donor
binding energy, Nano Lett. 12 763−768 (2012).

[120]
T. Thorbeck, A. Fujiwara, and Neil. Zimmerman, Simulating Capacitances to Silicon Quantum
Dots: Breakdown of the Parallel Plate Capacitor Model, IEEE Transactions on Nanotechnology 11
975 (2012).
[121]
K. Nishiguchi and A. Fujiwara: Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors
with Small Subthreshold Swing Driven by Body-Bias Effect, Appl. Phys. Express, vol. 5, p. 085002(2012).
[122]
I. Mahboob, Q. Wilmart, K. Nishiguchi, A. Fujiwara, and H. Yamaguchi: Tuneable
electromechanical comb generation, Appl. Phys. Lett. 100, 113109 (2012).
[123]
H. Kageshima and A. Fujiwara: First-principles study of nonclassical effects in silicon-based
nanocapacitors, Phys. Rev. B 85, 205304-1-6 (2012).
[124]
K. Nishiguchi and A. Fujiwara: Detecting signals buried in noise via nanowire transistors using
stochastic resonance, Appl. Phys. Lett. 101, 193108 (2012).
[125]
Y. Niida, K. Takashina, Y. Ono, A. Fujiwara and Y. Hiryama: Electron and hole mobilities at a
Si/SiO2 interface with giant valley splitting, Appl. Phys. Lett. 102, 191603 (2013).
[126]
K. Takashina, Y. Niida, V. T. Renard, B. A. Piot, D. S. D. Tregurtha, A. Fujiwara, and Y.
Hirayama, Phys. Rev. B 88, 201301(R) (2013).
[127]
V. T. Renard, I. Duchemin, Y. Niida, A. Fujiwara, Y. Hirayama and K. Takashina, Metallic
behaviour in SOI quantum wells with strong intervalley scattering, Scientific reports | 3 : 2011 | DOI:
10.1038/srep02011 (2013).
[128]
N. Clément, K. Nishiguchi, J. F. Dufreche, D. Guerin, A. Fujiwara, and D. Vuillaume, Water
Electrolysis and Energy Harvesting with Zero-Dimensional Ion-Sensitive Field-Effect Transistors,
Nano Lett. 13, 3903−3908 (2013).
[129]
I. Mahboob, V. Nier, K. Nishiguchi, A. Fujiwara, and H. Yamaguchi, Multi-mode parametriccoupling in an electromechanical resonator, Appl. Phys. Lett. 103, 153105 (2013).
[130]
S. Sasaki, K. Tateno, G. Zhang, H. Suominen, Y. Harada, S. Saito, A. Fujiwara, T. Sogawa,
and K. Muraki, Appl. Phys. Lett. 103, 213502 (2013).
[131]
I. Mahboob, K. Nishiguchi, A. Fujiwara, and H. Yamaguchi, Phonon Lasing in an
Electromechanical Resonator , Phys. Rev. Lett. 110, 127202 (2013).
[132]
K. Nishiguchi, H. Yamaguchi, A. Fujiwara, H. S. J. van der Zant, and G. A. Steele,
Wide-bandwidth charge sensitivity with a radio-frequency field-effect transistor , Appl. Phys. Lett.
103, 143102 (2013).
[133]
R. Sivakumarasamy, K. Nishiguchi, A. Fujiwara, D. Vuillaume and N. Clement, , A Simple andInexpensive Technique for PDMS/Silicon chip Alignment with sub-μm Precision, Anal. Methods, 6,
97-101 (2014).
[134]
G. Yamahata, K. Nishiguchi, and A. Fujiwara: Accuracy evaluation and mechanism crossover ofsingle-electron transfer in Si tunable-barrier turnstiles Phys. Rev. B 89, 165302 (2014)[135]
I. Mahboob, M. Mounaix, K. Nishiguchi, A. Fujiwara, and H. Yamaguchi: A multimodeelectromechanical parametric resonator array, Scientific Reports 4, 4448 (2014).
[136]
K. Nishiguchi, Y. Ono, and A. Fujiwara: Single-electron thermal noise, Nanotechnology 25,
275201 (2014).
[137]
G. Yamahata, K. Nishiguchi, and A. Fujiwara, Gigahertz single-trap electron pumps in silicon,
Nat. Commun. 5, 5038 (2014).
[138]
J. Noborisaka, K. Nishiguchi, and A. Fujiwara: Electric tuning of direct-indirect opticaltransitions in silicon, Scientific Reports 4, 6950 (2014).
[139]
A.Fujiwara, K. Nishiguchi, and G. Yamahata, Silicon nanowire MOSFETs for diverse
applications: A review, Proceedings of 2014 IEEE International Nanoelectronics Conference (INEC)(DOI: 10.1109/INEC.2014.7460452).
[140]
G. Yamahata, T. Karasawa, and A. Fujiwara, Gigahertz single-hole transfer in Si tunable-barrier
pumps, Appl. Phys. Lett. 106, 023112 (2015).
[141]
S. Sasaki, K. Tateno, G.. Zhang, Y. Harada, S. Saito, A. Fujiwara, T. Sogawa and K. Muraki:Self-aligned gate-all-around InAs/InP core–shell nanowire field-effect transistors, Jpn. J. Appl. Phys.
54, 04DN04 (2015).
[142]
T. Uchida, M. Arita, A. Fujiwara, and Y. Takahashi, Coupling capacitance between double
quantum dots tunable by the number of electrons in Si quantum dots, J. Appl. Phys. 117, 084316(2015).
[143]
I. Mahboob, N. Perrissin, K. Nishiguchi, D. Hatanaka, Y. Okazaki, A. Fujiwara, and H.
Yamaguchi: Dispersive and dissipative coupling in a micromechanical resonator embedded with ananomechanical resonator, Nano letters 15, 2312-2317 (2015).
[144]
M. Hori, M. Uematsu, A. Fujiwara, and Y. Ono: Electrical activation and electron spin resonancemeasurements of arsenic implanted in silicon, Appl. Phys. Lett. 106, 142105 (2015).
[145]
P. A. Carles, K. Nishiguchi and A. Fujiwara: Deviation from the law of energy equipartition in asmall dynamic-random-access memory, Jpn. J. Appl. Phys. 54, 06FG03 (2015).
[146]
V. T. Renard, B. A. Piot, X. Waintal, G. Fleury, D. Cooper, Y. Niida, D. Tregurtha, A. Fujiwara,
Y. Hirayama, and K. Takashina: Valley polarization assisted spin polarization in two dimensions, Nat.
Commun. 6, 7230 (2015).
[147]
K. Nishiguchi, A. Castellanos-Gomez, H. Yamaguchi, A. Fujiwara, H. S. J. van der Zant, G. A.
Steele: Observing the semiconducting band-gap alignment of MoS2 layers of different atomic
thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode, Appl. Phys. Lett. 107, 053101 (2015).
[148]
K. Chida, K. Nishiguchi, G. Yamahata, H. Tanaka and A. Fujiwara: Thermal-noise suppression
in nano-scale Si field-effect transistors by feedback control based on single-electron detection, Appl.
Phys. Lett. 107, 073110 (2015).
[149]
T. Hayashi, T. Take, H. Nakano, A. Fujiwara, T. Sekitani, and T. Someya: Study of Randomly
Distributed Charge Traps by Measuring Frequency- and Time-Dependence of a DNTT-Based MIS
Capacitor, Journal of Display Technology 11 (7) 604-609 (2015).
[150]
T. Uchida, M. Jo, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, and Y. Takahashi: Fabricationand evaluation of series-triple quantum dots by thermal oxidation of silicon nanowire, AIP Advances 5(11), 117144 (2015).
[151]
M. Jo, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, A Fujiwara, Y. Ono, K. Nishiguchi, H.
Inokawa, and Y. Takahashi: Fabrication and single-electron-transfer operation of a triple-dot
single-electron transistor, J. Appl. Phys. 118 (21), 214305 (2015).
[152]
G. Yamahata, S. P. Giblin, M. Kataoka, and T. Karasawa, and A. Fujiwara, Gigahertz
single-electron pumping in silicon with an accuracy better than 9.2 parts in 107, Appl. Phys. Lett. 109,013101 (2016).
[153]
M. Villiers, I. Mahboob, K. Nishiguchi, D. Hatanaka, A. Fujiwara, and H. Yamaguchi: An
electromechanical displacement transducer, Appl. Phys. Express 9, 086701 (2016).
[154]
I. Mahboob, R. Duppy, K. Nishiguchi, A. Fujiwara, and H. Yamaguchi: Hopf andperiod-doubling bifurcations in an electromechanical resonator, Appl. Phys. Lett. 109, 073101 (2016).
[155]
K. Nishiguchi, D. Yoshizumi, Y. Sekine, K .Furukawa, A. Fujiwara, and M. Nagase: Planar cold
cathode based on a multilayer-graphene/SiO2/Si heterodevice, Appl. Phys. Express 9, 105101 (2016).
[156]
T. Uchida, M. Jo, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, and Y. Takahashi: Capacitanceevaluation of compact silicon triple quantum dots by simultaneous gate voltage sweeping, J. Appl.
Phys. 120, 234502 (2016).
[157]
T. Watanabe, M. Hori, T. Tsuchiya, A. Fujiwara, and Y. Ono: Time-domain charge pumping on
silicon-on-insulator MOS devices, Jpn. J. Appl. Phys. 56, 011303 (2017).
[158]
Y. Ono, M. Hori, G. P. Lansbergen, and A. Fujiwara, Manipulation of single charges using
dopant atoms in silicon -Interplay with intervalley phonon emission-, Recent Global Research and
Education: Technological Challenges, Volume 519 of the series Advances in Intelligent Systems andComputing, 137-141 (2017).
[159]
S. Punniyakoti, R. Sivakumarasamy, F. Vaurette, P. Joseph, K. Nishiguchi, A. Fujiwara, and N.
Clement, Hydrogen Silsesquioxane-based Nanofluidics, Advanced Materials Interfaces 4, 1601155

(2017).
[160]
G. Yamahata, S. P. Giblin, M. Kataoka, and T. Karasawa, and A. Fujiwara, High-accuracy
current generation in the nanoampere regime from a silicon single-trap electron pump, Scientific
Reports 7, 45137 (2017).
[161]
I. Mahboob, M. Villiers, K. Nishiguchi, D. Hatanaka, A. Fujiwara, and H. Yamaguchi: A
correlated electromechanical system, New Journal of Physics 19, 033026 (2017).
[162]
K Chida, S Desai, K Nishiguchi, and A Fujiwara, Power generator driven by Maxwell's demon,Nat. Commun. 8, 15310 (2017).
[163]
J. Trasobares, J. Rech, T. Jonckheere, T. Martin, O. Alévêque, E. Levillain, V. Diez-Cabanes, Y.
Olivier, J. Cornil, J. P. Nys, R, Sivakumarasamy, K Smaali, P. Leclere, A. Fujiwara, D. Théron, D.
Vuillaume, and N. Clément, Estimation of π–π Electronic Couplings from Current Measurements,
Nano letters 17, 3215-3224 (2017).
[164]
N. Clement and A. Fujiwara, Molecular diodes: Breaking the Landauer limit, Nat. Nanotech. 12,725 (2017).
[165]
Y. Takahashi, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, and A. Fujiwara, Evaluation of
Coupled Triple Quantum Dots with Compact Device Structure, ECS Transactions 80, 173-180 (2017).
[166]
R. Sivakumarasamy, R. Hartkamp, B. Siboulet, J.-F. Dufreche, K. Nishiguchi, A. Fujiwara, and
N. Clément, Selective-layer-free Blood Ionogram based on Ion-specific Interactions with aNanotransistor, Nat. Mater. (accepted).
[167]
T. Hayashi1, A. Naka, M. Hiroki, T. Yokota, T. Someya, and A. Fujiwara, Transportcharacteristics in Au/pentacene/Au diodes, Jpn. J. Appl. Phys. 57, 03EH07 (2018).
[168]
T. Hayashi, Y. Tokura, and A. Fujiwara, Field-dependent hopping conduction, Physica B 541, 19(2018).
[169]
H. Firdaus, T. Watanabe, M. Hori, D. Moraru, Y. Takahashi, A. Fujiwara, and Y. Ono, Detectionof single holes generated by impact ionization in silicon, Appl. Phys. Lett. 113, 163103 (2018).
[170]
R. Ohsugi, H. Omi, Y. Krockenberger, and A. Fujiwara, Spin splitting in EuO(111)/Si(111)spin-filter tunnel junctions with atomically sharp interface, Jpn. J. Appl. Phys. 57, 110304 (2018).
[171]
H. Firdaus, T. Watanabe, M. Hori, D. Moraru, Y. Takahashi, A. Fujiwara, and Y. Ono, Electron
aspirator using electron–electron scattering in nanoscale silicon, Nature Communications 9, 4813
(2018)[172]
Y. Takahashi, M. Shinohara, M. Arita, A. Tsurumaki-Fukuchi, and A. Fujiwara, Y. Ono, K.
Nishiguchi, and H. Inokawa, Characteristics of Si Single-Electron Transistor under Illumination, ECS
Transactions 92 (4), 47-56 (2019).
[173]
S. Giblin, A. Fujiwara, G. Yamahata, M. H. Bae, N. Kim, A. Rossi, M. Möttönen, and M.
Kataoka, Evidence for universality of tunable-barrier electron pumps, Metrologia 56, 044004 (2019).
[174]
N. Johnson, G. Yamahata, and A. Fujiwara, Measurement of the curvature and height of thepotential barrier for a dynamic quantum dot, Appl. Phys. Lett. 115, 162103 (2019).
[175]
G. Yamahata, S. Ryu, N. Johnson, H-S. Sim, A. Fujiwara, and M. Kataoka, Picosecond coherent
electron motion in a silicon single-electron source, Nature Nanotechnology 14, 1019–1023 (2019).
[176]
S. P. Giblin, E. Mykkänen, A. Kemppinen, P. Immonen, A. J. Manninen, M. Jenei, M. Möttönen,G. Yamahata, A. Fujiwara and M. Kataoka, Realisation of a quantum current standard at liquid
helium temperature with sub-ppm reproducibilit, Metrologia 57, 025013 (2020).
[177]
G. Yamahata, Johnson, and A. Fujiwara, Understanding the mechanism of tunable-barrier
single-electron pumping: Mechanism crossover and optimal accuracy, Phys. Rev. B 103, 245306(2021).
[178]
M Razanoelina, M Hori, A Fujiwara, and Y Ono, Critical conductance of two-dimensional
electron gas in silicon-on-insulator metal-oxide-semiconductor field-effect transistor, Appl. Phys.
Express 14, 104003 (2021).
[179]
K Nishiguchi, K Chida, and A Fujiwara, Single-electron manipulation in a attofarad-capacitor
DRAM, ECS Transactions 104, 33 (2021).

[180]
K. Chida, A. Fujiwara, and K. Nishiguchi, Seebeck effect in a nanometer-scale dot in a Si
nanowire observed with electron counting statistics, Appl. Phys. Lett. 121, 183501 (2022).
[181]
S. Li, Y. Coffinier, C. Lagadec, F. Cleri, K. Nishiguchi, A. Fujiwara, T. Fujii, S–H. Kim, N.
Clement, Redox-labelled electrochemical aptasensors with nanosupported cancer cells, Biosensors andBioelectronics 216, 114643 (2022).
[182]
K. Nishiguchi, H. Yamaguchi, A. Fujiwara, H. S. J. Van Der Zant, and G. A. Steele,
Room-temperature several-hundred-of-megahertz charge sensing with single-electron resolution using
a silicon transistor, Appl. Phys. Lett. 122, 043502 (2023).
[183]
K. Nishiguchi, H. Yamaguchi, and A. Fujiwara, Subgigahertz Multilayer-Graphene
Nanoelectromechanical System Integrated with a Nanometer-Scale Silicon Transistor Driven byReflectometry, Phys. Rev. Appl. 19, L011003 (2023).
[184]
K. Chida, A. Fujiwara, and K. Nishiguchi, Noise-to-energy conversion in a nanometer-scale dot
observed with electron counting statistics, Appl. Phys. Lett. 122, 213502 (2023).
[185]
S. P. Giblin, G. Yamahata, A. Fujiwara and M. Kataoka, Precision measurement of an electron
pump at 2 GHz; the frontier of small DC current metrology, Metrologia 60, 055001 (2023).
[186]
S. Nakamura, D. Matsumaru, G. Yamahata, T. Oe, Y. Okazaki, S. Takada, M. Maruyama, A.
Fujiwara, and N.-H. Kaneko, Cryogenic operation of electromechanical relay for reversal of quantizedcurrent generated by a single-electron pump, IEEE Trans. Inst. Meas. 72, 1502809, (2023).
[187]
S. Li, Y. Coffinier, C. Lagadec, F. Cleri, K. Nishiguchi, A. Fujiwara, S. H. Kim, and N. Clement,
Single-Cell Electrochemical Aptasensor Array, ACS Sens. 8, 2921 (2023).
[188]
I. M. Madrid, Z. Zheng, C. Gerbelot, A. Fujiwara, S. Li, S. Grall, K. Nishiguchi, S. H. Kim, A.
Chovin, C. Demaille, and N. Clement, Ballistic Brownian motion of nanoconfined DNA, ACS nano,17, 17031 (2023).
[189]
G. Yamahata, N. Johnson, and A. Fujiwara, Coulomb collisions of hot and cold single electrons
in series-coupled silicon single-electron pumps, Phys. Rev. Appl. 20, 044043 (2023).
[190]
A. Fujiwara, G. Yamahata, N. Johnson, S. Nakamura, N.-H. Kaneko, Silicon Quantum Dot
Single-Electron Pumps for the Closure of the Quantum Metrology Triangle, ECS Transactions 112,119 (2023).
[191]
S. Nakamura, D. Matsumaru, G. Yamahata, T. Oe, D.-H. Chae, Y. Okazaki, S. Takada, M.
Maruyama, A. Fujiwara, and N.-H. Kaneko, Universality and multiplication of GHz-operated silicon
pumps with ppm-level uncertainty, Nano Letters 24, 9 (2024).
[192]
G. Yamahata and A. Fujiwara, Advances toward high-accuracy operation of tunable-barrier
single-hole pumps in silicon, J. App. Phys. 135, 014502 (2024).
[193]
J. Noborisaka, T. Hayashi, A. Fujiwara, and K. Nishiguchi: Valley splitting by extended zone
effective mass approximation incorporating strain is silicon (accepted), J. Appl. Phys. (2024).
[194]

Invited Talks:[1] A. Fujiwara, G. Yamahata, N. Johnson, S. Nakamura, and N. -H. Kaneko, Silicon quantum dot
single-electron pumps for the closure of the quantum metrology triangle, 244th The Electrochemical
Society (ECS) Meeting (Oct. 8-12, 2023).
[2] A. Fujiwara, and G. Yamahata, Metrology application of silicon single-electron pumps, 2023
Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD 2023) (Jul. 10-11, 2023,
Yokohama, Japan).
[3] A. Fujiwara, G. Yamahata, N. Johnson, Si dynamic quantum dot single-electron pump for metrology
application, International Workshop on CNRS – Industry Collaborations (IWCIC) (Jun.13-14, 2023,
Tokyo, Japan).

[4] A. Fujiwara, G. Yamahata, N. Johnson, Electron manipulation in a silicon dynamic quantum dot,
Compound Semiconductor Week (CSW20243) (May 29-Jun 2, 2023, Jeju, Korea).
[5] A. Fujiwara, G. Yamahata, N. Johnson, Electron manipulation using a silicon dynamic quantum dot,Workshop for the single-electron quantum technology, (Nov. 25-26, 2022, Buyeo, Korea).
[6] A.Fujiwara, G. Yamahata, N. Johnson, Electron dynamics and device simulation of silicon
single-electron pumps, Single-Electron Quantum Optics for Metrology Workshop (SEQUOIA
Meeting) (October 11-12, 2021, Online, France)[7] A. Fujiwara, G. Yamahata, N. Johnson, S. Ryu, H-S. Sim, and M. Kataoka, Fast electron dynamics ina silicon dynamic quantum dot, The International Workshop on Computational Nanotechnology(IWCN) (May 24 –June 6, 2021, Online, Korea)[8] A. Fujiwara, G. Yamahata, N. Johnson, S. Ryu, H-S. Sim, and M. Kataoka, Fast electron dynamics ina silicon dynamic quantum dot, Int. Workshop on Cool Electrons in Flatlands (CEF2020) (June 15-24,
2020, Catania, Italy, held as virtual workshop)[9] A. Fujiwara, Silicon nanodevices for metrology and sensor applications, IEEE Nanotechnology
Materials and Devices Conference (IEEE NMDC2019) (Oct. 27-30, 2019, Stockholm, Sweden)[10] A. Fujiwara, Ultimate electronics with silicon nanowire MOSFETs, Workshop on Innovative
Nanoscale Devices and Systems (WINDS) (Nov. 25-30, 2018, Hawaii, USA)[11] A. Fujiwara, G. Yamahata, K. Chida, and K. Nishiguchi, Tunable-barrier electron pump for quantum
current standards and information-to-energy converters, China-Japan International Workshop on
Quantum Technologies (QTech2018) (Aug 23-24, 2018, Hefei, China).
[12] A. Fujiwara, Ultimate Electronics with Control of Single Electrons, 7th Summer School on
Semiconductor/Superconducting Quantum Coherence Effect and Quantum Information (August 27-29,
2017, Shuzenji, Japan).
[13] A. Fujiwara, K. Nishiguchi, G. Yamahata, and K. Chida, Ultimate electronics with control of single
electrons, EM-NANO2017 (June 18-21, 2017, Fukui, Japan).
[14] A. Fujiwara, K. Nishiguchi, G. Yamahata, and K. Chida, Ultimate Single Electronics with Silicon
Nanowire MOSFETs, 2017 Silicon Nanoelectronics Workshop (June 4-5, 2017, Kyoto, Japan).
[15] A. Fujiwara, G. Yamahata, K. Nishiguchi, S. P. Giblin, and M. Kataoka, Gigahertz single-electron
pump for quantum current standard, 33rd ICPS (Beijing, 31 July- 5 August, 2016)[16] A. Fujiwara, G. Yamahata, and K. Nishiguchi, Gigahertz Single-Electron Pump towards a
Representation of the New Ampere, 2015 SSDM (Sapporo, 27-30 September, 2015).
[17] A. Fujiwara, G. Yamahata, J. Noborisaka, and K. Nishiguchi, Nanoscale Silicon MOSFET for
Metrology and Valleytronics Applications, 2015 UK-Japan Silicon Nanoelectronics andNanotechnology Symposium (Southampton, 9-10 July, 2015).
[18] Plenary talk: A. Fujiwara, Silicon single-electron devices for ultimate electronics, EURAMET DC &Quantum Metrology Meeting (Bern, 27-29 May 2015)[19] A. Fujiwara, K. Nishiguchi, G. Yamahata, Silicon nanowire MOSFETs for diverse applications, The
6th IEEE International Nanoelectronics Conference 2014 (INEC2014) (Sapporo, July 28-31, 2014)[20] Plenary talk: A. Fujiwara, Silicon-based nanodevices for diverse applications, 39th Int. Conf. on Microand Nano Engineering (MNE) (London, UK, Sept. 16-19 2013).
[21] A. Fujiwara, G. Yamahata, K. Nishiguchi, G. P. Lansbergen and Y. Ono: Silicon Single-ElectronTransfer Devices: Ultimate Control of Electric Charge, 2012 Silicon Nanoelectronics Workshop (June2012, Hawaii, USA).

[22] A. Fujiwara, K. Nishiguchi, and Y. Ono: Single electron transfer technology using Si nanowire MOSFETs,
2010 International Symposium on Atom-scale Silicon Hybrid Nanotechnologies for ‘More-than-Moore’ &‘Beyond CMOS’ Era (March 1 – 2, 2010, Southampton, UK), Program and Abstracts, pp. 19 – 20.)[23] A. Fujiwara, K. Nishiguchi and Y. Ono: Single-electron devices based on silicon nanowire MOSFETs,
Trends in Nanotechnology (TNT2009) p.39 (September 7-11, 2009,Barcelona)[24] A. Fujiwara, K. Nishiguchi and Y. Ono: Silicon Nanowire MOSFETs and Their Application toSingle-Electron Devices, International Conference on Nanoscience and Technology (ChinaNANO)
2009, p. 50-51 (September 1-3, 2009,Beijing)[25] A. Fujiwara, K. Nishiguchi, Y. Ono, H. Inokawa, and Y. Takahashi: Silicon Single-Electron Devices
and Their Applications, 2008 Tera-level NanoDevices (TND) Technical Forum (Soul, 2008.10.17).
[26] A. Fujiwara and Y. Takahashi: Si nano-devices using an electron-hole system, 2nd International
Conference on Semiconductor Quantum Dots (QD2002) (2002.9).
[27] A. Fujiwara and Y. Takahashi: Si nano-devices using an electron-hole system, Proceedings of 5th
Europian Workshop on Low Temperature Electronics, (Journal de Physiqye IV, 12, No.Pr3), Ed. F
Balestra, (WOLTE-5) pp. Pr3-85-Pr3-92 (2002.6).
[28] A. Fujiwara, K. Yamazaki, and Y. Takahashi: Silicon Single-electron CCD, 2001 Int. Micreprocess
and Nanotechnology Conference (MNC) pp. 278-279 (2001.10).
[29] A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase
Single-electron devices: recent attempts towards high performance and functionality, 1999 Int. Conf.
Solid State Devices and Materials (SSDM) pp. 248-249 (1999).
[30] A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase: Silicon
single-electron devices fabricated by pattern-dependent oxidation (PADOX), Sweden-Japan JointQNANO Workshop (1998).
[31] A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase: Silicon
single-electron devices fabricated by pattern-dependent oxidation (PADOX), International Symposium
on Formation, Physics and Device Application of Quantum Dot Structures (QDS98), (1998).

International Conferences:[1] Y. Takahashi, S. Horiguchi, A. Fujiwara, and K. Murase: Co-tunneling current in very small Si
single-electron transistors, Third International Symposium on New Phenomena in Mesoscopic
Structures (1995).
[2] Y. Takahashi, A. Fujiwara, H. Namatsu, K. Kurihara, K. Iwadate, M. Nagase, and K. Murase(Invited) : Silicon Single-Electron Transistors Operating up to Room Temperature, 1996 March
Meeting of The American Physical Society (1996).
[3] Y. Takahashi, M. Nagase, A. Fujiwara, H. Namatsu, K. Kurihara, K. Iwadate, and K. Murase (Invited):
Silicon Single-Electron Transistors Operating at Very High Temperatures, The International
Conference on Quantum Devices and Circuits (1996).
[4] K. Murase, Y. Takahashi, and A. Fujiwara (Invited) : Silicon single-electron transistor, Adv. Res.
Asynchronous Circuits and System Symp. (1996).
[5] A. Fujiwara, Y. Takahashi, and K. Murase: Direct evidence of the first conduction-band electron in an
asymmetric Si single-electron transistor, The Electrochemical Society 1996 Fall Meeting (1996).
[6] Y. Takahashi, A. Fujiwara, M. Nagase, H. Namatsu, K. Kurihara, and K. Murase (Invited) : Sizedependence of the characteristics of silicon single-electron transistors, The Scanning Microscopy 1997

Meeting (1997).
[7] A. Fujiwara, Y. Takahashi, H. Namatsu, K. Kurihara, and K. Murase: Suppression of unintentional
formation of parasitic Si islands on a Si single-electron transistors by the use of SiN masked oxidation,
1997 Int. Conf. Solid State Devices and Materials (SSDM) (1997).
[8] M. Nagase, A. Fujiwara, K. Yamazaki, Y. Takahashi, K. Murase, and K. Kurihara: Si nanostructures
formed by patteren-dependent oxidation, MNE 97 (1997).
[9] A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase: Silicon
double-island single-electron device, Technical Digest of International Electron Devices Meeting 1997
(IEDM), 938-940.
[10] A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase(Invited) : Silicon single-electron devices fabricated by pattern-dependent oxidation (PADOX),
International Symposium on Formation, Physics and Device Application of Quantum Dot Structures(QDS98), (1998).
[11] A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase(Invited) : Silicon single-electron devices fabricated by pattern-dependent oxidation (PADOX),
Sweden-Japan Joint QNANO Workshop (1998).
[12] K. Yamazaki, A. Fujiwara, Y. Takahashi, H. Namatsu, and K. Kurihara: Sub-10-nm overlay accuracy
in electron beam lithography for nanometer-scale device fabrication, 1998 Int. Symp. on Micro Nano
Process Conference (MNC 98).
[13] Y. Takahashi, A. Fujiwara, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, and K. Murase(Invited) : Si single-electron devices, Int. Symp. Quantum Optics and Mesoscopic Physics p. 2
(1998).
[14] A. Fujiwara, Y. Takahashi, and K. Murase: Observation of single electron-hole recombination andphoton pumped current in an asymmetric silicon single-electron transistor, Int. Symp. Quantum Optics
and Mesoscopic Physics p. 26 (1998).
[15] Y. Takahashi, A. Fujiwara, K. Yamazaki, H. Namatsu, K. Kurihara, and K. Murase: A Si memory
device composed of a 1D-MOSFET Switch and a Single-Electron-Transistor Detector, 1998 Int. Conf.
Solid State Devices and Materials (SSDM) pp. 176-177 (1998).
[16] Y. Takahashi, A. Fujiwara, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, and K. Murase(Invited) : Si single-electron devices, NAIST Int. Symp.Nano- and Biotechnology for Future Devices
pp. 13-12 (1998).
[17] A. Fujiwara, Y. Takahashi, and K. Murase: asymmetric tunnel barrier in a Si single-electron transistor,
4th Int. Symp. New Phenomena in Mesoscopic Structure (NPMS’98) pp. 230-232 (1998).
[18] Y. Takahashi, A. Fujiwara, K. Yamazaki, H. Namatsu, K. Kurihara, and K. Murase: A multi-gate
single-electron transistor and its application to an exclusive-OR gate, 1998 International Electron
Devices Meeting (IEDM) Technical Digest pp. 127-130 (1998).
[19] A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase(Invited) : Single-electron devices: recent attempts towards high performance and functionality, 1999
Int. Conf. Solid State Devices and Materials (SSDM) pp. 248-249 (1999).
[20] Y. Takahashi, Y. Ono, A. Fujiwara, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, and M.
Murase (Invited): Novel fabrication techniques for silicon single-electron devices, 1999 Int. Meetingof The Electrochemical Society (ECS) Abstract No. 1863 (1999).
[21] Y. Takahashi, Y. Ono, A. Fujiwara, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, and M.
Murase (Invited): Silicon single-electron devices, Proceedings of Advanced Nanoelectronics: Devices,Materials, and Computing, 3rd SANKEN International Symposium, pp. 4-10 (2000.3.).
[22] Y. Takahashi, A. Fujiwara, Y. Ono, and M. Murase (Invited): Silicon single-electron devices and theirapplications, the 30th IEEE International Symposium on Multiple-Valued Logic, (IEEE Computer
Society) (2000.5.).
[23] Y. Takahashi, Y. Ono, A. Fujiwara, and M. Murase (Invited): Advanced technologies for Si-based
single-electron tunneling devices, International Symposium on Formation, Physics and Device
Application of Quantum Dot Structures (QDS2000),, Collected Abstract pp. 2 (2000.9.).
[24] A. Fujiwara, and Y. Takahashi,: Silicon single-electron CCD, 2000 International Electron Devices
Meeting (IEDM) Technical Digest pp. 866-868 (2000.12).
[25] Y. Takahashi, A. Fujiwara, Y. Ono, S. Horiguchi, K. Shiraishi, M. Nagase, and K. Murase (Invited) :Silicon Single-Electron Devices, International Conference on Experimental Implementation of
Quantum Computation (IQC01), Abstract pp. Th3-2 (2001.1).
[26] Y. Takahashi, A. Fujiwara, Y. Ono, S. Horiguchi, K. Shiraishi, M. Nagase, and K. Murase (Invited) :Silicon Single-Electron Transistor, 2001 March Meeting of The American Physical Society, Bulletin
pp.519 (2001.3).
[27] William H. Huber, Neil M. Zimmerman, A. Fujiwara, and Y. Takahashi: Excellent Charge Offset
Stability in Silicon Single-Electron Transistors, 2001 March Meeting of The American PhysicalSociety, Bulletin pp.1119 (2001.3).
[28] Y. Takahashi, Y. Ono, and A. Fujiwara (Invited): Silicon Single-Electron Devices and Their Circuit
Applications, The Firsr Korea-U.S.-Japan Workshop on Nanostructures Science and Technology (1st
WNST), Proceeings Session 4-4 (2001.4).
[29] A. Fujiwara,and Y. Takahashi: Detection of Elemental Charge in Si-wire SOI MOSFET bySingle-Electron Floating-Body Effect, 2001 Silicon Nanoelectronics Workshop (SNW-01), Workshop
Abstracts pp. 40-41 (2001.6).
[30] M. Nagase, S. Horiguchi, A. Fujiwara, Y. Ono, K. Yamazaki, H. Namatsu, and Y. Takahashi (Invited):
Si single-electron devices formed by pattern-dependent oxidation, 8-th International Conference on
Formation of Semiconductor Interfaces (ICFSI-8), (2001.6.).
[31] H. Inokawa, A. Fujiwara, and Y. Takahashi: A Multiple-Valued SRAM with CombinedSingle-Electron and MOS Transistors, 59th Annual Device Research Conference (DRC-01)
Conference Digest 129-130 (2001.6).
[32] M. Nagase, S. Horiguchi, A. Fujiwara, and Y. Takahashi: Three dimensional size evaluation of islandin Si single-electron transistor, 2001 Int. Conf. Solid State Devices and Materials (SSDM) pp. 436-437(2001.9).
[33] H. Inokawa, A. Fujiwara, and Y. Takahashi: A Merged SET-MOSFET Logic for Interface andMultiple-valued Functions, 2001 Int. Conf. Solid State Devices and Materials (SSDM) pp. 548-549(2001.9).
[34] A. Fujiwara, K. Yamazaki, and Y. Takahashi: Single-electron Detection in Si-Wire Transistor at Room
Temperature, 2001 Int. Conf. Solid State Devices and Materials (SSDM) pp. 568-569 (2001.9).
[35] M. Nagase, S. Horiguchi, K. Shiraishi, A. Fujiwara, and Y. Takahashi (Invited): Single-electron
devices formed by thermal oxidation, International Symposium.on Materials Prosessing for
Nanostructures Device, (2001.9).
[36] H. Inokawa, A. Fujiwara, and Y. Takahashi (Invited): A Multiple-Valued Single-Electron SRAM byPADOX Process, 2001 6th Int. Conf. Solid-State and Integrated-Circuit Technology pp. 205-208(2001.10).

[37] A. Fujiwara, K. Yamazaki, and Y. Takahashi (Invited): Silicon Single-electron CCD, 2001 Int.
Micreprocess and Nanotechnology Conference (MNC) pp. 278-279 (2001.10).
[38] Y. Takahashi, Y. Ono, A. Fujiwara, and H. Inokawa, (Invited) : Silicon Single-Electron Devices, 7thInternational Symposium on Advanced Physical Fields (APF-7) pp. 11-15 (2001.11).
[39] Y. Takahashi, Y. Ono, A. Fujiwara, and H. Inokawa, (Invited): Silicon Single-Electron Transistors andSingle-Electron CCD, The Fall 2001 Meeting of the Materials Research Society (MRS) (2001.11).
[40] H. Inokawa, A. Fujiwara, and Y. Takahashi: A Multiple-Valued Logic with Merged Single-Electron
and MOS Transistors, 2001 International Electron Devices Meeting (IEDM) Technical Digest pp.
147-150 (2001.12).
[41] Y. Takahashi, Y. Ono, A. Fujiwara, and H. Inokawa (Invited): Silicon Single-Electron Transistors andTheir Applications to Logic Circuits, 2002 Int. Meeting of The Electrochemical Society (ECS) Abstract
No. 629 (2002.5).
[42] N. M. Zimmerman, W.H. Huber, A. Fujiwara and Y. Takahashi: Excellent charge offset stability in
Si-based set transistors, Conference on Precision Electromagnetic Measurements, 2002, (CPEM02),
Conference Digest pp. 124-125 (2002.6).
[43] Shigeto Fukatsu, Tomonori Takahashi, Kohei M. Itoh, Masashi Uematsu, AkirA. Fujiwara, Hiroyuki
Kageshima, Yasuo Takahashi, and Kenji Shiraishi: Self-Diffusion of Si in Thermally Grown
Amorphous SiO2, 2002 International Electron Materials Conference (EMC) (2002.6).
[44] A. Fujiwara and Y. Takahashi (Invited): Si nano-devices using an electron-hole system, Proceedings of
5th Europian Workshop on Low Temperature Electronics, (Journal de Physiqye IV, 12, No.Pr3), Ed. F
Balestra, (WOLTE-5) pp. Pr3-85-Pr3-92 (2002.6).
[45] A. Fujiwara, S. Horiguchi, M. Nagase, and Y. Takahashi : Threshold Voltage of Si Single-ElectronTransistor, 2002 Int. Conf. Solid State Devices and Materials (SSDM) pp. 110-111 (2002.9).
[46] M. Nagase, S. Horiguchi, A. Fujiwara, and Y. Takahashi: Evaluation of lattice distortion withnanometer resolution in Si single-electron transistor, 2002 Int. Conf. Solid State Devices and Materials(SSDM) pp. 552-553 (2002.9).
[47] Y. Takahashi, Y. Ono, A. Fujiwara, and H. Inokawa (Invited): Silicon single-electron devices for logic
applications, 32th European Solid-State Device Research Conference (ESSDERC-2002) Proceedingsof 32nd ESSDERC, Eds. G. Baccarani, E. Gnani, and M. Rudan, pp.61-68 (2002.9).
[48] A. Fujiwara and Y. Takahashi (Invited): Si nano-devices using an electron-hole system, 2ndInternational Conference on Semiconductor Quantum Dots (QD2002) (2002.9).
[49] Y. Takahashi, Y. Ono, A. Fujiwara, and H. Inokawa (Invited): Development of Si single-electron
devices, 4th International Symposium on Nanostructures and Mesoscopic Systems (NanoMES-2003)
Abstract No. RP1 (2003.2).
[50] K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, and Y. Takahashi: Automatic Control of theOscillation Phase of a Single-Electron Transistor by a Memory Node with a Small MOSFET, 61th
Annual Device Research Conference (DRC-03) (2003.6).
[51] K. Takashina, Y. Hirayama, A. Fujiwara, and Y. Takahashi: A Silicon Bi-layer System, The 15th
International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS 15) p. 44(2003.7).
[52] S. Horiguchi, A. Fujiwara, H. Inokawa, and Y. Takahashi: Analysis of Back-Gate Voltage Dependenceof Threshold Voltage of Thin SOI MOSFET and Its Application to Si Single-Electron Transistor, 2003
Int. Conf. Solid State Devices and Materials (SSDM) pp. 332-333 (2003.9).
[53] Y. Takahashi, A. Fujiwara, and S. Horiguchi (Invited): Silicon nano-wire and quantized conductance,

International Workshop on Smart Interconnects (IWSI) Co-organized with Dr. Rohrer’s JSPS Award
Workshop, Abstract: pp. 16 (2003.11).
[54] K. Takashina, Y. Hirayama, A. Fujiwara, S. Horiguchi, and Y. Takahashi : Valley Spliting Control in
SIMOX based SiO2/Si/ SiO2 Quantum Well, International Symposium .on
Functional
Semiconductor NanoSystems (FSNS 2003) p. 44 (2003.11).
[55] Y. Takahashi, Y. Ono, A. Fujiwara, K. Nishiguchi and H. Inokawa (Invited): Silicon Single-Electron
Devices Operating with MOSFETs, 6th International Conference on New Phenomena in Mesoscopic
Systems & 4th International Conference on Surfaces and Interfaces of Mesoscopic Devices, (NPMS-6& SIMD-4), Abstract p. 107 (2003.12).
[56] Y. Takahashi, Y. Ono, A. Fujiwara, and H. Inokawa (Invited): Silicon nano-devices and single-electron
devices, 2003 International Semiconductor Device Research Symposium (ISDRS’03), Symposium
Proceedings pp. 448-449 (IEEE Catalog Number: 03EX741, 2003.12).
[57] A. Fujiwara, N. Zimmerman, Y. Ono, and Y. Takahashi: Single-electron turnstile using Si-wirecharge-coupled devices, 2003 International Semiconductor Device Research Symposium (ISDRS’03),
Symposium Proceedings pp. 485-486 (IEEE Catalog Number: 03EX741, 2003.12).
[58] H. Inokawa, Y. Ono, A. Fujiwara, and Y. Takahashi (Invited): Single-Electron Devices fabricated by
MOS Processes, European Material Research Society 2004 Spring Meeting (E-MRS 2004 Spring
Meeting, Strasbourg, France – May 24-28, 2004).
[59] Y. Takahashi, Y. Ono, A. Fujiwara, K. Nishiguchi, and H. Inokawa (Invited): Fabrication andApplication of Silicon Single-Electron Devices, Ultimate Lithography and Nanodevice Engineering
Conference, Keynote in Industrial Day (Agelonde, France, 2004.5. 13-16).
[60] Y. Takahashi, Y. Ono, A. Fujiwara, K. Nishiguchi, and H. Inokawa, Fabrication and Application of
Silicon Single-Electron Devices, Ultimate lithography and nanodevice engineering (LITHO200)(13-16 June, 2004 Agelonde-France).
[61] S. Horiguchi, A. Fujiwara, H. Inokawa, and Y. Takahashi (Invited): Electronic States in Si
Single-Electron Transistors, 2004 Silicon Nanoelectronics Workshop (SNW-04), (Honolulu, Hawaii,
USA, 2004.6).
[62] Neil M. Zimmerman, AkirA. Fujiwara, Stuart Martin, Yukinori Ono, and Yasuo Takahashi:
Silicon-Based, Tunable-Barrier Single Charge Sources, Conference on Precision Electromagnetic
Measurements (CPEM 2004), (London, UK, 2004.6.27-7.2).
[63] K. Takashina, Y. Hirayama, A. Fujiwara, and Y. Takahashi: Transport properties of Landau level
coincidences in valley-tunable silicon, The 16th International Conference on High Magnetic Fields in
Semiconductor Physics (SemiMag 16) (2004.8).
[64] Y. Ono, A. Fujiwara, H. Inokawa, and Y. Takahashi: Charge-state control of phosphorus donors in SOIMOSFET, 2004 Int. Conf. Solid State Devices and Materials (SSDM) (Tokyo, 2004.9).
[65] Y. Takahashi, Y. Ono, A. Fujiwara, K. Nishiguchi, and H. Inokawa (Invited): Application of SiliconSingle-Electron Devices, First Annual Meeting on the Fusion of Biotechnology, Nanotechnology and
Semiconductor Technology (FBNS) (Kyoto, 2004.10).
[66] Y. Takahashi, Y. Ono, A. Fujiwara, and H. Inokawa (Invited): Silicon Single-Electron Devices andTheir Applications, The 7th International Conference on Solid-State and Integrated-Circuit Technology(ICSICT), Proceedings pp. 624-629 (Beijing 北京, China, 2004.10. 18-21).
[67] Y. Takahashi, Y. Ono, A. Fujiwara, K. Nishiguchi, and H. Inokawa (Invited): Single-Electron Device
applications using their special functionalities, The 6th International Conference on Nano-molecularElectronics (ICNME-2004) (Kobe, 2004.12).

[68] K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, and Y. Takahashi: Room-temperature single-electrontransfer and detection with silicon nanodevices, 2004 International Electron Devices Meeting (IEDM)
Technical Digest (San Francisco, 2004.12).
[69] N. M. Zimmerman, A. Fujiwara, Y. Ono, H. Inokawa, Y. Takahashi, and E. Hourdakis (Invited), The
physics of Coulomb blockade in tunable barrier Si wires,, International Conference on
Nanoelectronics, Nanostructures, and Carrier Interaction (NNCI2005), (Atsugi, Japan, 2005.1)[70] Y. Ono, A. Fujiwara, Y. Takahashi, and H. Inokawa (Invited): Silicon single-electron pump andturnstile; Interplay with crystalline imperfection, Material Research Society Spring Meeting (2005
MRS Spring meeting), (San Francisco, USA, 2005.3)[71] Y. Takahashi, Y. Ono, A. Fujiwara, K. Nishiguchi, and H. Inokawa (Invited): Silicon-based
single-electron devices, Fourth International Conference on Silicon Epitaxy and Heterostructures(ICSI-4)（Awaji Island, Japan, 2005.5）.
[72] K. Takashina, Y. Ono, A. Fujiwara, Y. Takahashi and Y. Hirayama (Invited): Control of valley andspatial subbands in double-gate SOI MOSFETs, Asia-Pacific Workshop on Fundamental andApplication of Advanced Semiconductor Devices (AWAD 2005), (Seoul, Korea, 2005.6)[73] S. Koo, A. Fujiwara, C. A. Richter, E. M. Vogel, Q. Li, M. D. Edelstein, J. Han, and J. E. Bonevich:
Transport properties of silicon nanowire field effect transistor test structures fabricated by top-down
approaches, 2005 Silicon Nanoelectronics Workshop (SNW-05), (Kyoto, Japan, 2005.6).
[74] K. Takashina, Y. Ono, A. Fujiwara, Y. Takahashi, and Y. Hirayama: Intersubband scattering indouble-gate MOSFETs, 2005 Silicon Nanoelectronics Workshop (SNW-05), (Kyoto, Japan, 2005.6).
[75] K. Nishiguchi, O. Crauste, H. Namatsu, S. Horiguchi, Y. Ono , A. Fujiwara, H. Inokawa, and Y.
Takahashi: Back-gate effect on Coulomb blockade in SOI trench wires, 2005 Silicon Nanoelectronics
Workshop (SNW-05), (Kyoto, Japan, 2005.6).
[76] Y. Ono, A. Fujiwara, Y. Takahashi, H. Inokawa (Invited): Single-Electron Manipulation: Interplay
with Crystalline Imperfection The 2nd International Symposium on Point Defect andNonstoichiometry (Kaohsiung TAIWAN , 2005.10)[77] H. Inokawa, Y. Ono, A. Fujiwara, K. Nishiguchi, and Y. Takahashi (Invited): Single-Electron Devices
and Circuits Based on MOS Processes, 2005 Tera-level NanoDevices (TND) Technical Forum (Soul,
2005.10).
[78] Y. Ono, A. Fujiwara, Y. Takahashi, H. Inokawa (Invited): Single-Electron Transfer in Silicon,
Fourteenth International Workshop on The Physics of Semiconductor Devices WorkShop (Delhi, India,
2005.12)[79] K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, and Y. Takahashi: Room-Temperature Operation of
Data Processing Circuit Based on Single-Electron Transfer and Detection with
Metal-Oxide-Semiconductor Field-Effect-Transistor Technology, 2006 Silicon Nanoelectronics
Workshop (SNW-06), (Honolulu, Hawaii, USA, 2006.6).
[80] K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, and Y. Takahashi: Long-retention gain-cell DRAM
using undoped SOI MOSFET, 2006 Silicon Nanoelectronics Workshop (SNW-06), (Honolulu, Hawaii,
USA, 2006.6).
[81] K. Takashina, M. Brun, T. Ota, D. Maude, A. Fujiwara, Y. Ono, H. Inokawa, Y. Hirayama: ResistanceRidges Along Filling Factor v=1 in SiO2/Si/SiO2, 28th International Conference on the Physics of
Semiconducors (ICPS) (Vienna, 2006.7).
[82] W. C .Zhang, K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi, and N. J.
Wu: Transfer and Detection of Single Electrons using Metal-Oxide-Semiconductor
Field-Effect-Transistors, 2006 Asia-Pacific Workshop on Fundamental and Application of Advanced

Semiconductor Devices, (Sendai, Japan, 2006. 7)[83] H. Inokawa, K. Nishiguchi, A. Fujiwara, Y. Ono, Y. Takahashi, and H. Yamaguchi:
Metal-Oxide-Semiconductor-Based Single-Electronics, The 5-th annual International Conference on
Global Research and Education (inter-Academia) (Iasi, Romania, 2006. 9)[84] K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, and Y. Takahashi: Infrared detection
with silicon nano transistors, 2004 Int. Conf. Solid State Devices and Materials (SSDM) (Yokohama,Japan, 2006.9).
[85] H. W. Liu,T. Fujisawa,Y. Ono, A. Fujiwara, H. Inokawa, and Y. Hirayama, Resonant TunnelingTransport through Silicon Double Quantum Dot, ICNT(International Conference of Nanoscience andTechnology, (Basel, 2006 July 30-August 4).
[86] T. Kaizawa, M. Arita, A. Fujiwara, K. Yamazaki1, Y. Ono, H. Inokawa, and Yasuo Takahashi:
Single-electron device using Si nanodot array and multi-input gates, 8th International Conference on
Solid-State and Integrated-Circuit Technology (ICSICT2006, Oct. 23-26, 2006, Shanghai, China),
Technical program, D3-7.
[87] H. Inokawa , K. Nishiguchi, Y. Ono, A. Fujiwara, and Y. Takahashi:(invited)
Recent progress in integration of silicon single-electron devices.
The 4th International Workshop on Ubiquitous Knowledge Network Environment (March 5 - 7, 2007,
Sapporo, Japan) Abstract, p. 15.
[88] Y. Ono, J.-F. Morizur, K. Nishiguchi, K. Takashina, H. Yamaguchi, A. Fujiwara, K. Hiratsuka, S.
Horiguchi, H. Inokawa, and Y. Takahashi: Hopping conduction in buried-channel SOI MOSFETs withshallow impurities, International Conference on Nanoelectronics, Nanostructures, and Carrier
Interaction (NNCI2007, February 20 - 23, 2007, Atsugi, Kanagawa). Program & Abstract p. 161.
[89] K. Takashina, V. Renard, Y. Niida, A. Fujiwara, Y. Hirayama, T. Fujisawa: Temperature Dependent
Resistivity of a Two-Dimensional Electron System in a SiO2/Si/SiO2 Quantum Well, International
Conference on Nanoelectronics, Nanostructures, and Carrier Interaction (NNCI2007, February 20 23, 2007, Atsugi, Kanagawa).
[90] H.W. Liu, T. Fujisawa, Y. Ono, A. Fujiwara, H. Inokawa, K. Takashina, and Y. Hirayama:
Electron transport through single and double quantum dots in silicon MOS structures
2007 Frontiers in Nanoscale Science and Technology Workshop (FNST2007, March 29 - 31, 2007,
University of Tokyo)[91] T. Kaizawa, M. Arita, A. Fujiwara, K. Yamazaki1, Y. Ono, H. Inokawa, Y. Takahashi, and J.-B. Choi:
Single-electron device using Si nanodot array and multi-input gates, 2007 Silicon Nanoelectronics
Workshop (SNW-2007, June 10-11, Kyoto), Workshop Abstract, pp. 171- 172.
[92] Y. Ono, M. Khalafalla, K. Nishiguchi, K. Takashina, H. Yamaguchi, A. Fujiwara, S. Horiguchi, H.
Inokawa, and Y. Takahashi: Dopant-mediated charge transport in boron-doped nano MOSFETs, 2007
Silicon Nanoelectronics Workshop (SNW-2007, June 10-11, Kyoto), Workshop Abstract, pp. 159- 160.
[93] K. Nishiguchi, Y. Ono, A. Fujiwara, H. Inokawa, and Y.
Takahashi(invited):Room-temperature-operating single-electron devices using silicon nanowire MOSFET, 2007
Asia-Pacific Workshop on Fundamentals and Applicaition
Advanced Semiconductor Devices(AWAD, June, Gyeongju, 2007).
[94] S. Yabuuchi, H. Kageshima, Y. Ono, M. Nagase, A. Fujiwara, E. Ohta:
Theoretical study on magnetic properties of manganese nanosilicide in silicon
17th International Vacuum Congress (IVC-17, joint with ICSS-13 and ICN+T2007, July 2 - 6, 2007,
Stockholm, Sweden), Final program, p. 55, NSP1 - 118.
[95] H. Kageshima and A. Fujiwara: First-principles study on capacitor made of silicon (111)nano-slabs:17th International Vacuum Congress (IVC-17, joint with ICSS-13 and ICN+T2007, July 2- 6, 2007, Stockholm, Sweden).
[96] A. Fujiwara, K. Nishiguchi, and Y. Ono:Single-electron ratchet using silicon nanowie MOSFETInternational Conference on Electronic Properties of Two-dimensional Systems and Modulated
Semiconductor Structures (EP2DS 17 + 13 MSS, 5-20 July, 2007, Genova Magazzini del Cotone,
Italy),MSS13 Abstract Book, pp. 215 – 217.
[97] H. Inokawa, A. Fujiwara, K. Nishiguchi and Y. Ono:Capacitive Parameter Extraction for
Nanometer-Size Field-Effect Transistors, 2007 International Conference on Solid State Devices andMaterials (SSDM-2007, September 18-21, Tsukuba).
[98] M. Khalafalla, Y. Ono, K. Nishiguchi, and A. Fujiwara: Identification of Single and Coupled
Acceptors in Silicon Nano Field-Effect Transistors, 2007 International Conference on Solid State
Devices and Materials (SSDM-2007, September 18-21, Tsukuba).
[99] A. Fujiwara, K. Nishiguchi, and Y. Ono: Nanoampere charge pumping by single-electron ratchet using
Si nanowire MOSFETs, 2007 International Conference on Solid State Devices and Materials(SSDM-2007, September 18-21, Tsukuba).
[100] H. Inokawa, A. Fujiwara, K. Nishiguchi, Y. Ono, and H. Satoh: A Simple Test Structure forExtracting Capacitances in Nanometer-Scale MOSFETs, The 6-th annual International Conference on
Global Research and Education (inter-Academia, September 25-28, 2007, Hamamatsu).
[101] H. Kageshima and A. Fujiwara: Property of silicon quantum capacitor, The 10th Asian Workshop
on First-Principles Electronic Structure Calculations (ASIAN10, Higashi-hiroshima, Japan, October
29-31, 2007).
[102] Y. Ono, M. Khalafalla, K. Nishiguchi, K. Takashina, and A. Fujiwara: (invited) Charge Transport
in Boron-Doped Nano MOSFETs: Towards Single-Dopant Electronics, Fifth International Symposiumon Control of Semiconductor Interfaces (ISCSI - V, November 12 -14, Tokyo).
[103] Y. Takahashi, T. Kaizawa, M. Arita, A. Fujiwara, Y. Ono, and H. Inokawa(invited):Novel-Functional Single-Electron Device Using Nanodot Array and Multiple Input Gates,
3rd International Workshop on New Group IV Semiconductor Nanoelectronics (Nov. 8-9, 2007,
Sendai, Japan).
[104] K. Nishiguchi, M. Nagase, T. Yamaguchi, A. Fujiwara, and H. Yamaguchi: Low-energy electron
emission using a Si/SiO2/Si cathode for nano-decomposition, 20th International Mciroprocesses andNanotechnology Conference (MNC) (Nov. 5-8, Kyoto, 2007).
[105] K. Nishiguchi and A. Fujiwara: Single-electron circuit for stochastic data processing using
nano-MOSFETs, 2007 International Electron Devices Meeting (IEDM) Technical Digest pp. 791-794(2007.12).
[106] M. Jo, T. Kaizawa, M. Arita, A. Fujiwara, K. Yamazaki, Y. Ono, H. Inokawa, Y. Takahashi and J.-B.
Choi: Silicon nanodot-array device with multiple gates, E-MRS Spring Meeting, K2-P1-16,(Strasbourg, France, 2008.5).
[107] A. Fujiwara, S. Miyamoto, K. Nishiguchi1, Y. Ono, and N. M. Zimmerman: Dynamics ofSingle-Electron Capture in Si Nanowire MOSFETs, 2008 Silicon Nanoelectronics Workshop(SNW-2008, June, Honolulu).
[108] H. Kageshima and A. Fujiwara: First-principles Study on Inversion Layer Properties ofDouble-Gate Atomically Thin Silicon Channel, 2008 Silicon Nanoelectronics Workshop (SNW-2008,
June, Honolulu).
[109] T. Kaizawa, M. Arita, A. Fujiwara, K. Yamazaki, Y. Ono, H. Inokawa and Y. Takahashi: Full adder
operation based on Si nanodot array device, 2008 Silicon Nanoelectronics Workshop (SNW-2008,

June, Honolulu).
[110] K. Nishiguchi, C. Koechlin, Y. Ono, A. Fujiwara, H. Inokawa, and H. Yamaguchi:
Single-Electron-Resolution Electrometer Based on Field-Effect Transistor, Asia-Pacific Workshop on
Fundamental and Application of Advanced Semiconductor Devices (AWAD 2008), (Sapporo, Japan,
2008.7.9-11) Workshop abstract, p.119.
[111] K. Takashina, Y. Niida, V. Renard, A. Fujiwara, Y. Hirayama, and T. Fujisawa: Negative
Magnetoresistance of a Silicon 2DEG Under In-plane Magnetic Field due to Spin-splitting of Upper
Subbands, 18th Int. Conf. on High Magnetic in Semiconductor Physics and Nanotechnology (HMF18),(Sao Pedro, Brazil, 2008.8.3-8).
[112](invited) A. Fujiwara, K. Nishiguchi, Y. Ono, H. Inokawa1, and Y. Takahashi: SiliconSingle-Electron Devices and Their Applications, 2008 Tera-level NanoDevices (TND) Technical
Forum (Soul, 2008.10.17).
[113] S. Miyamoto, K. Nishiguchi, Y. Ono, K M. Itoh, and A. Fujiwara: Escape dynamics of electrons ina single-electron ratchet using silicon nanowire MOSFETs, IEEE Nanotechnology Materials andDevices (NMDC) (Oct20-22, Kyoto, 2008).
[114] H. Kageshima and A. Fujiwara: First-principles Study on Inversion Layer Capacitance ofAtomically Thin Si Channel Double Gate Field Effect Transistor, IEEE Nanotechnology Materials
and Devices (NMDC) (Oct20-22, Kyoto, 2008).
[115] (invited) Y. Ono, M. A. H. Khalafalla, A. Fujiwara, K. Nishiguch, K. Takashinaa, S. Horiguchi, Y.
Takahashi, H. Inokawa: Single-dopant effect in Si MOSFETs, IEEE Nanotechnology Materials andDevices (NMDC) (Oct20-22, Kyoto, 2008).
[116] K. Takashina, M. Nagase, K. Nishiguchi, Y. Ono, A. Fujiwara and T. Fujisawa: In-plane Transport
in a Double Layer Crystalline Silicon Structure with an SiO2 Barrier, IEEE Nanotechnology Materials
and Devices (NMDC) (Oct20-22, Kyoto, 2008).
[117] K. Nishiguchi, N. Clement, Y. Yamaguchi, and A. Fujiwara; Si nano-wire ion-sensitive field-effecttransistors with a shared floating gate, 21th International Microprocesses and Nanotechnology
Conference (MNC) (Oct, Fukuoka, 2008).
[118] (invited) Y. Takahashi, T. Kaizawa, M. Arita, A. Fujiwara, K. Yamazaki, Y. Ono, H. Inokawa:
Novel-Functional Single-Electron Device Using Nanodot Array with Multiple Inputs and Outputs, TheIUMRS International Conference in Asia 2008 (IUMRS-ICA 2008), Nagoya, Dec. 9-13, 2008.
[119] (Invited) Y. Takahashi, T. Kaizawa, M. Arita, A.Fujiwara, K. Yamazaki, Y.Ono and H. Inokawa:
Novel-Functional Single-Electron Device Using Nanodot Array with Multiple Outputs, 2009 RCIQE
International Seminar on "Advanced Semiconductor Materials and Devices", (Sapporo, 2009.3.2-3).
[120] M. Jo, T. Kaizawa, M. Arita, A. Fujiwara, Y. Ono, H. Inokawa, J.-B. Choi and Y. Takahashi:
Fabrication of double-dot single-electron transistor in silicon nanowire, 6th Internat. Conf. Silicon
Epitaxy and Heterostructures (ICSI-6), 660994 (DoubleTree Hotel, El Segundo, California: 2009.5.19)[121] H. Kageshima and A. Fujiwara: First-principles Study on Channel Thickness Dependence ofInversion Layer DielectricConstant in Double-Gate Atomically Thin Silicon, Silicon Nanoelectronics
Workshop (SNW-09), Workshop Abstracts, pp. 143-144 (2009.6.13-6.14, Kyoto)[122] M. Khalafalla, Y. Ono, K. Nishiguchi, and A. Fujiwara: Position Analysis of Single Acceptors in Si
Nanoscale Field-Effect Transistors: Silicon Nanoelectronics Workshop (SNW-09), Workshop
Abstracts, pp. 139-140 (2009.6.13-6.14, Kyoto)[123] M. Kawachi, Y. Ono, A. Fujiwara, and S. Horiguchi: Effect of δ-function-like Boron Charge Sheeton p-channel Ultra-thin SOI MOSFETs: Silicon Nanoelectronics Workshop (SNW-09), Workshop
Abstracts, pp. 87-88 (2009.6.13-6.14, Kyoto)

[124] M. Jo, T. Kaizawa, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi andJ.-B. Choi: Fabrication of Coupled-dot single-electron transistor in silicon nanowire, 2009 SiliconNanoelectronics Workshop (SNW-09),Workshop Abstracts, pp. 155-156 (2009.6.13-6.14, Kyoto)[125] S. Miyamoto, K. Nishiguchi, Y. Ono, K. M. Itoh, and A. Fujiwara: Single-electron activation overan oscillating barrier in silicon nanowire MOSFETs, The 18th International Conference on Electronic
Properties of Two-Dimensional Systems (EP2DS 18) p. 244 (2009.7.19-24 Kobe).
[126] K. Takashina, K. Nishiguchi, Y. Ono, A. Fujiwara, T. Fujisawa, Y. Hirayama and K. Muraki:
Electron-hole transport in a 40 nm thick silicon slab, The 18th International Conference on
Electronic Properties of Two-Dimensional Systems (EP2DS 18) p. 154 (2009.7.19-24 Kobe).
[127] (invited) Y. Takahashi, T. Kaizawa, M. Arita, A. Fujiwara, K.Yamazaki, Y.Ono and H. Inokawa andJ.-B. Choi: Novel-Functional Single-Electron Devices Using Silicon Nanodot Array, 2009
Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD 2009), (2009.6.24-26, Busan, Korea).
[128] (invited) A. Fujiwara, K. Nishiguchi and Y. Ono: Silicon Nanowire MOSFETs and Their
Application to Single-Electron Devices, International Conference on Nanoscience and Technology(ChinaNANO) 2009, p. 50-51 (September 1-3, 2009,Beijing)[129] (invited) A. Fujiwara, K. Nishiguchi and Y. Ono: Single-electron devices based on silicon
nanowire MOSFETs, Trends in Nanotechnology (TNT2009) p.39 (September 7-11, 2009,Barcelona)[130] M.Jo, K.Kato, M.Arita, Y.Ono, A.Fujiwara, H.Inokawa, Y.Takahashi and J.-B.Choi: Logic
switching characteristics of multiple-gate nanodot array device, 1st International Work. Si basednano-elect. & -photonics (SiNEP-09), (@Vigo, Spain: 2009.9.20-23)[131] J. Noborisaka, K. Nishiguchi, H. K ageshima, Y. Ono, and A. Fujiwara: Tunnel Spectroscopy ofElectron Subbands in Thin SOI MOSFETs, 2009 International Conference on Solid State Devices andMaterials (SSDM-2009), Extended Abs. pp. 262-263 (Oct. 6-9, 2009 Sendai).
[132] K. Nishiguchi, Y. Ono, and A. Fujiwara: Single-electron counting statistics of shot noise innanowire Si MOSFETs, International Conference on Solid State Devices and Materials (SSDM-2009),
Extended Abs. pp. 1140-1141 (Oct. 6-9, 2009 Sendai).
[133] N. Clement, K. Nishiguchi, A. Fujiwara and D. Vuillaume: Random Telegraph Signal and Low
Frequency Noise in Silicon Charge-Sensitive Electrometers, International Conference on Solid State
Devices and Materials (SSDM-2009), Extended Abs. pp. 1138-1139 (Oct. 6-9, 2009 Sendai).
[134](invited) Y. Ono, M. A. H. Khalafalla1, S. Horiguchi, K. Nishiguchi, A. Fujiwara: Identificationof Single Boron Acceptors in Nanowire MOSFETs -A Base for Single-Dopant Electronics, 2009
International Conference on Solid State Devices and Materials (SSDM-2009), Extended Abs. pp.
1134-1135 (Oct. 6-9, 2009 Sendai).
[135] K. Nishiguchi, S. Miyamoto, and A. Fujiwara: Single-electron stochastic resonance using Si
nano-wire transistors, 22 th International Microprocesses and Nanotechnology Conference (MNC)(November 16-19, Sapporo, 2009).
[136] M. Jo, K. Kato, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi and J.-B.
Choi: Fabrication of triple-dot single-electron transistor and its single-electron transfer operation,
Internat. Symp. Adv. Nanost. Nano-Dev. (ISANN) , P1-13 (Sheraton Maui Resort & Spa, Kaanapali,
Hawaii: 2009.12.9)[137] Y. Takahashi, M. Jo, Y. Kato, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, and J.-B.
Choi: Fabrication method for triple-coupled dots based on pattern-dependent oxidation, Int. Workshop
on New Group IV Semiconductor, (2010.1.29-30, Sendai).
[138](invited): A. Fujiwara, K. Nishiguchi, and Y. Ono: Single electron transfer technology using Si

nanowire MOSFETs, 2010 International Symposium on Atom-scale Silicon Hybrid Nanotechnologies for‘More-than-Moore’ & ‘Beyond CMOS’ Era (March 1 – 2, 2010, Southampton, UK), Program and Abstracts,
pp. 19 – 20.)[139]

(invited): Y. Ono, M. Khalafalla, K. Nishiguchi, and A. Fujiwara: Single dopant effects in siliconnano transistors, 2010 International Symposium on Atom-scale Silicon Hybrid Nanotechnologies for‘More-than-Moore’ & ‘Beyond CMOS’ Era (March 1 -2, 2010, Southampton, UK), Program and Abstracts,
pp. 25 – 26.)

[140]

(invited): Y. Ono, M. Khalafalla, K. Nishiguchi, and A. Fujiwara: Single dopant effects in siliconnano transistors, 2010 Single Dopant Control (March 29 -April 1, 2010, Leiden, Netherlands).

[141] Y. Kato, M. Jo, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi and J.-B.
Choi: Analysis of Tunneling Potential of Si SETs Fabricated by Pattern-Dependent Oxidation, 2010
Silicon Nanoelectronics Workshop (SNW-10), (2010.6.13-6.14, Honolulu)[142] Y. Takahashi, M. Jo, Y. Kato, T. Kaizawa, A. Fujiwara, M. Arita: Si nanodot device fabricated bythermal oxidation and their applications, International Symposium on Technology Evolution for
Silicon Nano-Electronics (ISTESNE), (2010 6.3-6.5, Tokyo).
[143] Y. Niida, K. Takashina, Y. Ono, A. Fujiwara and Y. Hirayama: Electron-mobility suppression undervalley-polarized region in Si quantum well, 30h International Conference on the Physics of
Semiconductors (ICPS) (Seoul, 2010.7.25-30)[144] Y. Ono, Y. Miyazaki, S. Yabuuchi, H. Kageshima, M. Nagase, A. Fujiwara and E.
Ota :Significance of the Interface regarding Magnetic Properties of Mn-Nanosilicide in Silicon,
Asia-Pacific Conference on Semiconducting Silicides Science and Technology Towards Sustainable(APAC-SILICIDE 2010) (Tsukuba, 2010.7.24-26).
[145] H. Kageshima and A. Fujiwara: Effective dielectric constant of Si-nanofilm channel in the full
inversion regime under field effect due to symmetric double gate, 30h International Conference on the
Physics of Semiconductors (ICPS) (Seoul, 2010.7.25-30)[146] Y. Niida, K. Takashina, Y. Ono, A. Fujiwara and Y. Hirayama: Valley polarization and interface
quality in SiO2/(100)Si/SiO2 quantum well, Workshop on Silicon S&T Quantum Computing(2010.8.23-24, Albuquerque).
[147] J. Noborisaka, K. Nishiguchi, H. K ageshima, Y. Ono, and A. Fujiwara: Strong stark effect ofelectroluminescence in thin SOI MOSFETs, 2010 International Conference on Solid State Devices andMaterials (SSDM-2010), Extended Abs. pp. 796-797(Sept. 22-24, 2010 Tokyo).
[148] K. Nishiguchi and A. Fujiwara: Body-biased steep-subthreshold-swing MOS (BS-MOS) withsmall hysteresis, off current, and drain voltage, 2010 International Conference on Solid State Devices
and Materials (SSDM-2010), Extended Abs. pp. 1261-1262(Sept. 22-24, 2010 Tokyo).
[149] T. Goto, H. Inokawa, Y. Ono, A. Fujiwara and K. Torimitsu: Effect of Device Structure on
Electrical Conduction of Terphenyl-based Molecule, 2010 International Conference on Solid State
Devices and Materials (SSDM-2010), Extended Abs. pp. 507-508(Sept. 22-24, 2010 Tokyo).
[150] Y. Kato, M. Jo, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H Inokawa, and Y Takahashi:
Analysis of Tunneling Potential of Si SETs Formed by Pattern-Dependent Oxidation, SeventhInternational Conference on Flow Dynamics, (2010.11, 1-3@Sendai).
[151] K. Nishiguchi and A. Fujiwara: Fast sensing using single-electron stochastic resonance in Si
nano-wire transistors, 23 th International Microprocesses and Nanotechnology Conference (MNC)(November 9-12, Kokura, 2010).
[152] (invited) K. Nishiguchi and A. Fujiwara: Single-electron devices based on Si nanoscale FETs,
Workshop on Innovative Devices and Systems (WINDS) (2010.12.17-20, Honolulu).

[153] Ted Thorbeck, A. Fujiwara, and N. Zimmerman: Gate Capacitance Reproducibility and Modelingin Silicon Double Quantum Dots, 2011 APS March meeting (2011.3.21-3.25, Dallas).
[154] (invited): Y. Ono, M. A. H. Khalafalla, J. Noborisaka, G. P. Lansbergen, A. Fujiwara: Dopants insilicon transistors; Transport and Photoemission, CMOS Emerging Technologies Workshop (June 15 –17, 2011, Whistler, BC, Canada).
[155] M. Sinohara, Y. Kato, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, and Y. Takahashi:
Observation of New Current Peaks of Si Single-Electron Transistor with a Single-Hole Trap, 2011
Silicon Nanoelectronics Workshop (SNW-11), (Jun 2011, Kyoto)[156] G.P. Lansbergen , Y. Ono and A. Fujiwara: Charge switching in wire MOSFETs studied byseparation of capture and emission, 2011 Silicon Nanoelectronics Workshop (SNW-11), (Jun 2011,
Kyoto)[157] S. Horiguchi and A. Fujiwara: Fluctuation of Average Position of Electrons in Coulomb Island in
Si Single-Electron T ransistor, 7th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-7),(Aug.28-Sept.1, 2011 Leuven)[158] Y. Niida , K. Takashina, A. Fujiwara, Y. Ono and Y. Hirayama: Subband energy manipulation bygate voltage in Si (100) hole system, 19th international conference on Electronic Properties of
Two-Dimensional Systems (EP2DS19), Florida, USA (Jul. 2011).
[159] G. Yamahata, K. Nishiguchi, and A. Fujiwara: Accuracy of Single-electron Shuttle Transfer in Si
Nanowire MOSFETs, 19th international conference on Electronic Properties of Two-Dimensional
Systems (EP2DS19), Florida, USA (Jul. 2011).
[160] I. Mahboob, Q. Wilmart, K. Nishiguchi, A. Fujiwara and H. Yamaguchi: Mechanical idler
generation, 2011 International Conference on Solid State Devices and Materials, Nagoya, Japan (Sep.
2011).
[161] G.P. Lansbergen , Y. Ono and A. Fujiwara: Charge transfer by multiple donors in a Si nanowire,2011 International Conference on Solid State Devices and Materials, Nagoya, Japan (Sep. 2011).
[162] K. Nishiguchi and A. Fujiwara: Stochastic resonance using a steep-subthreshold-swing transistor,
24th International Microprocesses and Nanotechnology Conference (MNC 2011), Kyoto, Japan (Oct.
2011).
[163] G.P. Lansbergen , Y. Ono and A. Fujiwara: Donor based SE pumps with tunable donor binding: theInternational Conference on Nanoscience and Nanotechnology (ICONN 2012), Session 11.8-2, Perth,
Austraila (Feb. 5-9).
[164](invited) A. Fujiwara, G. Yamahata, K. Nishiguchi, G. P. Lansbergen and Y. Ono: SiliconSingle-Electron Transfer Devices: Ultimate Control of Electric Charge, 2012 Silicon Nanoelectronics
Workshop (June 2012, Hawaii, USA).
[165] H. Takenaka, M. Shinohara, T. Uchida , M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi. Ho.
Inokawa. and Y. Takahashi: High-frequency properties of Si Single-electron transistor, 2012 SiliconNanoelectronics Workshop (June 2012, Hawaii, USA).
[166] D. Tregurtha, K. Takashina, and A. Fujiwara: 2-dimensional electrons and holes in a 40 nm thicksilicon layer, UK Semiconductors 2012, Sheffield, UK (July 2012).
[167] K. Takashina, Y. Niida, V.T. Renard, A. Fujiwara, T. Fujisawa, K. Muraki, and Y. Hirayama:
Impact of valley-polarization on silicon-on-insulator transistors, UK Semiconductors 2012, Sheffield,
UK (July 2012).
[168] K. Takashina, Y. Niida, V.T. Renard, B.A. Piot, D.S.D. Tregurtha, A. Fujiwara, and Y. Hirayama:Spin and Valley Polarization Dependence of Resistivity in Two-Dimensions, 31h International

Conference on the Physics of Semiconductors (ICPS) (Zurich, 2012.7.29-8.3)[169] S. Sasaki, G.. Zhang, K. Tateno, H. Suominen, Y. Harada, S. Saito, A. Fujiwara, T. Sogawa and K.
Muraki: Fully Encapsulated Gate-All-Around InAs Nanowire FET, 2012 International Conference on
Solid State Devices and Materials (SSDM2012) (Sept. 25-27, 2010 Kyoto).
[170] C. J. Edwardson, P. G. Coleman, K. Takashina, D. Tregurtha and A. Fujiwara: Positron Studies ofSilicon Quantum Well Interfaces, 16th International Conference on Positron Annihilation (ICPA-16),(Bristol, UK, 19-24 August, 2012).
[171] A. Fujiwara, G. Yamahata, and K. Nishiguchi: Accuracy of single-electron transfer in Si nanowire
MOSFETs, Workshop on Innovative Nanoscale Devices and Systems (WINDS) p.56 (2012.12.2-7,
Hawaii).
[172] S. Sasaki, G.. Zhang, K. Tateno, H. Suominen, Y. Harada, S. Saito, A. Fujiwara, T. Sogawa and K.
Muraki: Characteristics of Gate-All-Around InAs Nanowire FETs Workshop on Innovative Nanoscale
Devices and Systems (WINDS) Abstract p.40 (2012.12.2-7, Hawaii).
[173] A. Fujiwara: Silicon single-electron transfer device,, 2013 International Workshop On Silicon
Quantum Electronics (Grenoble, France , Feb. 2013) .
[174] G. Yamahata, K. Nishiguchi, and A. Fujiwara: Crossover of transfer mechanism in Si
single-electron turnstiles, 2013 International Workshop On Silicon Quantum Electronics (Grenoble,
France , Feb. 2013) .
[175] D.S.D. Tregurtha, K. Takashina, A. Fujiwara: Current-Voltage Characteristics of a
Silicon-On-Insulator based Vertically Coupled Electron-Hole System, 2013 International Workshop
On Silicon Quantum Electronics (Grenoble, France , Feb. 2013) .
[176] K. Takashina, Y. Niida, V.T. Renard, B.A. Piot, D.S.D. Tregurtha, A. Fujiwara and Y.
Hirayama: Spin and Valley Polarization Dependence of Resistivity in Two-Dimensions, 2013
International Workshop On Silicon Quantum Electronics (Grenoble, France , Feb. 2013) .
[177] N. Clement, K. Nishiguchi, D. Vuillaume, and A. Fujiwara.: Dielectric Polarization 1/f Noise: asignature of defect-free oxides at nanotransistors interface APS March Meeting, Maryland, USA (Mar.
2013).
[178]
N. Clement, T. Dargent, H. Tanbakuchi, K. Nishiguchi, R. Sivakumarasamy, F. Wang, A.
Fujiwara, D. Ducatteau, G. Dambrine, D. Vuillaume, B. Legrand, and D. Theron: Interferometric
Scanning Microwave Microscope for Nanotechnology Application, APS March Meeting, Maryland,
USA (Mar. 2013).
[179]
N. Clement, K. Nishiguchi, J-F. Dufreche, D. Guerin, G. Patriarche, D. Troadec, A. Fujiwara, andD. Vuillaume: Transducing Energy Loss in Water Electrolysis with a 0D Ion-Sensitive Field-EffectTransistor , APS March Meeting, Maryland, USA (Mar. 2013).
[180]
M. Hori, H. Tanaka, A. Fujiwara and Y. Ono: ESR study of arsenic in silicon in low
ion-implantation-dose regime, The 4th International Symposium on Organic and Inorganic Electronic
Materials and Related Nanotechnologies (EM-NANO 2013), Kanazawa, Japan June 17-20, 2013.
[181]
I. Yoshioka, T. Uchida, M. Arita, A. Fujiwara and Y. Takahashi: Excited states in double-gate Si
single-electron transistors in the few electron regime, 2013 Silicon Nanoelectronics Workshop (June
9-10, 2013, Kyoto, Japan).
[182]
T. Uchida, H. Takenaka, I. Yoshioka, M. Arita, A. Fujiwara and Y. Takahashi: Double-dot Si
single-electron transistor with tunable coupling capacitive by the number of electrons in the dot, 2013
Silicon Nanoelectronics Workshop (June 9-10, 2013, Kyoto, Japan).
[183]

J. Noborisaka, K. Nishiguchi, A. Fujiwara: Enhancement of phononless optical transitions bylarge valley splitting in silicon MOSFETs, the 12th Asia Pacific Physics Conference (APPC),(Makuhari, Japan, July 14-19, 2013).
[184]
S. Sasaki, G.. Zhang, K. Tateno, Y. Harada, S. Saito, A. Fujiwara, T. Sogawa and K. Muraki:
Field-effect transistors fabricated from InAs nanowires grown via self-assisted vapor-liquid-solidmode, the 12th Asia Pacific Physics Conference (APPC), (Makuhari, Japan, July 14-19, 2013).
[185]
V.T. Renard, Y. Niida, I. Duchemin, A. Fujiwara, Y. Hirayama and K. Takashina: Influence ofintervalley scattering on the metallic behavior in Si MOSFETs, 20th international conference on
Electronic Properties of Two-Dimensional Systems (EP2DS20), Poland ( Jul. 1-5, 2013).
[186]
V.T. Renard, B.A. Piot, Y. Niida, D.S.D. Tregurtha, A. Fujiwara, Y. Hirayama, X. Waintal, G.
Fleury, and K. Takashina: Effects of Valley Polarization on Spin Polarization in a Silicon 2DEG, 20thinternational conference on Electronic Properties of Two-Dimensional Systems (EP2DS20), Poland( Jul. 1-5, 2013).
[187](invited: Plenary) A. Fujiwara, Silicon-based nanodevices for diverse applications, 39th Int. Conf.
on Micro and Nano Engineering (MNE) (London, UK, Sept. 16-19 2013).
[188]
R. Sivakumarasamy, K. Nishiguchi, A. Fujiwara, D. Vuillaume, and N. Clement: Ultimate
Integration of a PDMS-Based Lab-on-a-Chip with Nanotransistor Bio-sensors, 26th International
Microprocesses and Nanotechnology Conference (MNC 2013), Sapporo, Japan (Nov. 2013).
[189]
Y. Takahashi, H. Takenaka, T. Uchida, M. Arita, A. Fujiwara and H. Inokawa: High-speed
operation of Si single-electron transistor, 2013 ECS Autumn meeting (Oct.27-Nov. 1, 2013, USA).
[190]
N. Clement, F. Wang, K. Nishiguchi, A. Fujiwara, G. Patriarche, D. Troadec, B. Legrand, G.
Dambrine and D. Theron: Dual-gate Silicon Single-Electron Transistor Threshold Voltage mapping at
Nanoscale with a Scanning Microwave Microscope, 26th International Microprocesses andNanotechnology Conference (MNC 2013), Sapporo, Japan (Nov. 2013).
[191]
K. Nishiguchi,H. Yamaguchi, A. Fujiwara, H. S. J. van der Zant, and G. A. Steele:
High-charge-sensitivity radio-frequency field-effect transistor with large and tunable readout
frequency, 26th International Microprocesses and Nanotechnology Conference (MNC 2013), Sapporo,
Japan (Nov. 2013).
[192]
G. Yamahata, K. Nishiguchi, and A. Fujiwara: Mechanism crossover of single-electron transfer in
Si tunable-barrier turnstiles, The International Symposium on Nanoscale Transport and Technology(ISNTT2013), (Kanagawa, Japan , Nov. 2013)[193]
J. Noborisaka, K. Nishiguchi, and A. Fujiwara: Electrical tuning of phononless optical transition
by controlling valley splitting in silicon MOSFETs, The International Symposium on Nanoscale
Transport and Technology (ISNTT2013), (Kanagawa, Japan , Nov. 2013)[194] (invited) Y. Ono, G. P. Lansbergen, M. Hori and A. Fujiwara, Electron pump by a single atom
towards ultimate control of electronic charges, 2014 International Workshop on Advanced Nanovision(Hamamatsu, Japan, Jan. 20-21, 2014)[195]
V.T. Renard, B. A. Piot, Y. Niida, D. Tregurtha, A. Fujiwara, and Y. Hirayama, X. Waintal, G.
Fleury and K. Takashina: Valley Polarization Assisted Spin Polarization in a Silicon BasedTwo-dimensional Electron System, UK Semiconductors 2014, Sheffield, UK (July 9-10, 2014).
[196]

J. Noborisaka, K. Nishiguchi, and A. Fujiwara, Enhanced inter-band dipole transition due to large
valley splitting at the Si/SiO2 interface, 2014 Silicon Quantum Electronic Workshop, (Albuquerque,

USA , August 18-19 2014).

[197]
K. Chida, K. Nishiguchi, G.. Yamahata, and A. Fujiwara: Thermal-noise suppression in
nanometer-scale Si field-effect transistors by feedback control with single-electron resolution, 2014
International Conference on Solid State Devices and Materials, Tsukuba, Japan (Sep. 2014).

[198]
S. Sasaki, K. Tateno, G.. Zhang, Y. Harada, S. Saito, A. Fujiwara, T. Sogawa and K. Muraki:
Encapsulated Gate-All-Around InAs/InP Core-Shell Nanowire FETs, 2014 International Conference
on Solid State Devices and Materials, Tsukuba, Japan (Sep. 2014).
[199](invited) A. Fujiwara, K. Nishiguchi, G. Yamahata, Silicon nanowire MOSFETs for diverse
applications, The 6th IEEE International Nanoelectronics Conference 2014 (INEC2014) (Sapporo, July
28-31, 2014)[200]
T. Uchida, I. Yoshioka, H. Sato, M. Arita, A. Fujiwara and Y. Takahashi: Double-quantum-dot Si
single-electron transistor with multiple gates, The 6th IEEE International Nanoelectronics Conference
2014 (INEC2014) (Sapporo, July 28-31, 2014)[201]
I. Yoshioka, H. Sato, T. Uchida, A. Fujiwara, M. Arita, and Y. Takahashi: Highly functionality of
three-terminals nanodot array, The 6th IEEE International Nanoelectronics Conference 2014
(INEC2014) (Sapporo, July 28-31, 2014)
H. Sato, T. Uchida, I. Yoshioka, A. Fujiwara, M. Arita, and Y. Takahashi: The research of
Excited states in Si-SET, The 6th IEEE International Nanoelectronics Conference 2014
(INEC2014) (Sapporo, July 28-31, 2014)[202][203] N. Clement, K Nishiguchi, J-F Dufreche, D. Guerin, A. Fujiwara, and D. Vuillaume, Water
electrolysis and energy harvesting with 0D Ion-Sensitive Field-Effect Transistors, The 1st
International Symposium on Energy Challenges & Mechanics (ECM2014), Scotland, UK (Jul. 2014).
[204] R. Sivakumarasamy, K. Nishiguchi, A. Fujiwara, D. Vuillaume, and N. Clement, Zero
Dimensional Ion-Sensitive Field-Effect Transistors, 27th International Microprocesses andNanotechnology Conference (MNC 2014), Fukuoka, Japan (Nov. 2014).
[205] K. Nishiguchi, A. Castellanos-Gomez, H. Yamaguchi, A. Fujiwara, H. S. J. van der Zant, and G. A.
Steele, Tunnel diode composed of MoS2/SiO2/Si heterojunction, 27th International Microprocesses
and Nanotechnology Conference (MNC 2014), Fukuoka, Japan (Nov. 2014).
[206] K. Nishiguchi and A. Fujiwara, Violation of equipartition of energy in thermal noise of a small
DRAM, 27th International Microprocesses and Nanotechnology Conference (MNC 2014), Fukuoka,
Japan (Nov. 2014).
[207]
K. Nishiguchi, Y. Ono, and A. Fujiwara, Counting statistics of single-electron thermal noise,2014 Workshop on Innovative Nanoscale Devices and Systems (WINDS), (Hawaii, Nov. 30- Dec. 5,
2014)[208] （invited: Plenary talk): A. Fujiwara, Silicon single-electron devices for ultimate electronics,
EURAMET DC & Quantum Metrology Meeting (Bern, 27-29 May 2015)[209](invited) A. Fujiwara, G. Yamahata, J. Noborisaka, and K. Nishiguchi, Nanoscale Silicon
MOSFET for Metrology and Valleytronics Applications, 2015 UK-Japan Silicon Nanoelectronics andNanotechnology Symposium (Southampton, 9-10 July, 2015).
[210](invited) J. Noborisaka, K. Nishiguchi, and A. Fujiwara, Gate tuning of direct optical transitions
in silicon, 2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced
Semiconductor Devices (AWAD2015), Jeju Island, Korea (June29-July1. 2015) Tu-A3-4.
[211](invited) N. Clement, K. Nishiguchi, A. Fujiwara, and G. Larrieu, Ultra-low noise nanoscaletransistors for metrology of noise, energy harvesting and biosensing applications, 2015 IEEE Int. Conf.
on Noise and Fluctuations (INCF 2015) (Xian, China, June 2-6, 2015).
[212]
T. Watanabe, M. Hori, T. Saruwatari, A. Fujiwara, and Y. Ono: Low Temperature Charge
Pumping in SOI Gated PIN Diode, 2015 Silicon Nanoelectronics Workshop (Kyoto, Japan, June 14-15,
2015).
[213]

T. Uchida, H. Sato, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, and Y. Takahashi: Series-triple

quantum dots fabricated under each control gate by the use of thermal oxidation, 2015 SiliconNanoelectronics Workshop (Kyoto, Japan, June 14-15, 2015).
[214]
H. Sato, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, and Y. Takahashi: Variation of
Coulomb diamonds and excited states caused by electric field in Si single-electron transistor, 2015
Silicon Nanoelectronics Workshop (Kyoto, Japan, June 14-15, 2015).
[215]
T. Hayashi, A. Fujiwara, R. Shidachi, T. Yokota and T. Someya, AC transport characteristics of a
Au/DNTT/Al Schottky diode, 34th Electronic Materials Symposium (Moriyama, Japan, July 15-17,2015).
[216] G. Yamahata, K. Nishiguchi, M. Kataoka, and A. Fujiwara, 21st International Conference on
Electronic Properties of Two-Dimensional Systems (EP2DS21), Sendai Japan (Jul. 26-31, 2015).
[217] V. T. Renard, B. A. Piot, X. Waintal, G. Fleury, D. Cooper, Y. Niida, D. Tregurtha, A. Fujiwara, Y.
Hirayama, and K. Takashina, Valley polarisation assisted spin polarisation in two dimensions,21st International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS21),
Sendai, Japan (Jul. 26-31, 2015).
[218] G. Yamahata, K. Nishiguchi, S. P. Giblin, M. Kataoka, and A. Fujiwara, Ultrafast single-chargetransfer in silicon up to 8 GHz, Silicon Quantum Electronics Workshop 2015, Takamatsu, Japan(Aug.3-4 2015)[219] H. Tanaka, G. Yamahata, K. Nishiguchi, and A. Fujiwara, Error detection and correction of
single-electron transfer, Silicon Quantum Electronics Workshop 2015, Takamatsu, Japan (Aug.3-4
2015).
[220]
T. Uchida, H. Sato, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, and Y. Takahashi, Tunable
coupling capacitance of double quantum dot by an electric field Silicon Quantum Electronics
Workshop 2015, Takamatsu, Japan (Aug.3-4 2015).
[221](invited) A. Fujiwara, G. Yamahata, and K. Nishiguchi, Gigahertz Single-Electron Pump towards
a Representation of the New Ampere, 2015 International Conference on Solid State Devices andMaterials (SSDM) , Sapporo , 27-30 September, 2015.
[222]
T. Yamaguchi, M. Komura, K. Nagai, A. Fujiwara, H. Yamaguchi, and T. Iyoda, Directed
Self-Assembly of Amphiphilic Liquid-Crystalline Block Copolymer, IUPAC 11th International
Conference on Advanced olymers via Macromolecular Engineering (APME 2015), Yokohama, Japan(Oct 18-22, 2015).
[223] D. Yoshizumi, K. Nishiguchi, Y. Sekine, K. Furukawa, A. Fujiwara, and M. Nagase, Electron
Emission Using Multilayered-Graphene/SiO2/Si Heterodevice Driven with Low-Voltage Supply in
Low Vacuum, 28th International Microprocesses and Nanotechnology Conference (MNC 2015),
Toyama, Japan (Nov 10-13, 2015).
[224] T. Watanabe, M. Hori, T. Saruwatari, A. Fujiwara, and Y. Ono, Cryogenic Charge Pumping using
Silicon on Insulators, 28th International Microprocesses and Nanotechnology Conference (MNC
2015), Toyama, Japan (Nov 10-13, 2015).
[225]
T. Yamaguchi and A. Fujiwara, Ordering Analysis of In-Plane Cylindrical domains ofPolystyrene-b-Polydimethylsiloxane Formed by Thermal Annealing, 28th International
Microprocesses and Nanotechnology Conference (MNC 2015), Toyama, Japan (Nov 10-13, 2015).
[226] M. Jo, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H.
Inokawa, and Y. Takahashi, Fabrication of Triple-Dot Single-Electron Transistor and its Turnstile
Operation, 28th International Microprocesses and Nanotechnology Conference (MNC 2015), Toyama,
Japan (Nov 10-13, 2015).
[227]

R. Sivakumarasamy, K. Nishiguchi, A. Fujiwara, and N. Clement, Selective-Layer-Free Blood

Ionogram Using a 0D Nanotransistor Biosensor, 28th International Microprocesses andNanotechnology Conference (MNC 2015), Toyama, Japan (Nov 10-13, 2015).
[228]
G. Yamahata, S. P. Giblin, M. Kataoka, and A. Fujiwara: High-accuracy 2-GHz single-electron
pumping in silicon, The International Symposium on Nanoscale Transport and Technology(ISNTT2015), (Kanagawa, Japan , Nov. 17-20, 2015) .
[229]
K. Chida, K. Nishiguchi, G. Yamahata, H. Tanaka, and A. Fujiwara: Thermal noise suppression
by feedback control to single-electron motion, The International Symposium on Nanoscale Transport
and Technology (ISNTT2015), (Kanagawa, Japan , Nov. 17-20, 2015) .
[230]
T. Hayashi, T. Yokota, R. Shidachi, A. Fujiwara and T. Someya: Transport properties of a Ag/pentacene / Ag junction, The International Symposium on Nanoscale Transport and Technology(ISNTT2015), (Kanagawa, Japan , Nov. 17-20, 2015) .
[231]
M. Villiers, I. Mahboob, K. Nishiguchi, D. Hatanaka, A. Fujiwara and H. Yamaguchi, Correlated
phonons in a micro-nano-electromechanical system, The International Symposium on Nanoscale
Transport and Technology (ISNTT2015), (Kanagawa, Japan , Nov. 17-20, 2015) .
[232]
G. Yamahata, S. P. Giblin, M. Kataoka, T. Karasawa and A. Fujiwara: High-accuracy
measurement of single-trap electron pumps in Si, International Symposium on Advanced Nanodevices
and Nanotechnology (ISANN 2015) (Hawaii , USA, Nov. 29- Dec.4, 2015)[233]
T. Uchida, M. Jo, H. Sato, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, and Y. Takahashi:
Evaluation of the origin of excited states appeared in small Si single-electron transistors, 2016 SiliconNanoelectronics Workshop (Honolulu, USA, June 12-13, 2016).
[234]
S. P. Giblin, M. -H. Bae, G. Yamahata, P. See, J. D. Fletcher. T. J. B. M. Janssen, N. Kim, A.
Fujiwara, J. P. Griffiths, G. A. C Jonse, I Farrer, D. A. Ritchie, D. Drung, C. Krause, F. Stein, and M.
Kataoka, Universality of the tunable-barrier electron pump at the part-per-million level, 2016
Conference on Precision Electromagnetic Measurements (CPEM 2016) (Ottawa, July 10-15, 2016).
[235]
S. P. Giblin, G.. Yamahata, J. M. Williams, S. Rozhko, T. J. B. M. Janssen, A. Fujiwara, and M.
Kataoka, Scaling the current from a GHz electron pump using a CCC, 2016 Conference on Precision
Electromagnetic Measurements (CPEM 2016) (Ottawa, July 10-15, 2016).
[236](invited) A. Fujiwara, G. Yamahata, K. Nishiguchi, S. P. Giblin, and M. Kataoka, Gigahertz
single-electron pump for quantum current standard, 33rd ICPS (Beijing, 31 July- 5 August, 2016)[237]
K. Chida, K. Nishiguchi, and A. Fujiwara, Electric current generation with Maxwell’s demon in a
Si single-electron device, 33rd ICPS (Beijing, 31 July- 5 August, 2016)[238]
I. Mahboob, M. Villiers, , K. Nishiguchi, D. Hatanaka, A. Fujiwara, and H. Yamaguchi:
Correlated phonons in spectrally and spatially distinct electromechanical resonators, 33rd ICPS
(Beijing, 31 July- 5 August, 2016)[239]
T. Uchida, M. Jo, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, and Y. Takahashi: Evaluationof serially coupled triple quantum dots with a compact device structure by a simultaneousvoltage-sweeping method, 2016 IEEE 16th International Conference on Nanotechnology (Sendai,
Japan, August 22-25, 2016).
[240] T. Hayahshi, A. Naka, A. Fujiwara, T. Yokota, and T. Someya, Field Dependence of theSpace-charge Limited Current in Polycrystalline Pentacene2016 International Conference on Solid
State Devices and Materials (SSDM) , Tsukuba , 26-29 September, 2016.
[241]
Y. Ono, M. Hori, G. P. Lansbergen, and A. Fujiwara, Manipulation of single charges using
dopant atoms in silicon -Interplay with intervalley phonon emission-, The 15-th International
Conference on Global Research and Education (Inter-Academia, September 26-28, Warsaw, 2016)

[242](invited) N. Clement and A. Fujiwara: 10 nm-scale Nanotechnology: from Nanoarrays to 0D
Nanotransistor Biosensors, The 18th Takayanagi Kenjiro Memorial Symposium (Hamamatsu, Japan,
Nov. 15-16, 2016).
[243]
Y. Ono, M. Hori, G. P. Lansbergen, and A. Fujiwara, Manipulation of single charges using
dopant atoms in silicon -Interplay with intervalley phonon emission-, The 15-th International
Conference on Global Research and Education (Inter-Academia) (Warsaw, Poland, September 26-28,
2016)
[244]
Y. Ono, M. Hori, and A. Fujiwara, Silicon Single Boron Transistor, Joint International
Conference - The 3rd International Conference on Nano Electronics Research and Education(ICNERE)The 8th Electrical, Electronics, Control, Communication, and Informatics Seminar(EECCiS) (Malang, Indonesia, Oct. 31-Nov. 2, 2016)[245](invited) A. Fujiwara, K. Nishiguchi, G. Yamahata, and K. Chida, Ultimate Single Electronics
with Silicon Nanowire MOSFETs, 2017 Silicon Nanoelectronics Workshop (June 4-5, 2017, Kyoto,
Japan).
[246]
H. Firdaus, M. Hori, Y. Takahashi, A. Fujiwara, and Y. Ono, Remote Detection of Holes
Generated by Impact Ionization in Silicon, 2017 Silicon Nanoelectronics Workshop (June 4-5, 2017,
Kyoto, Japan).
[247](invited) A. Fujiwara, K. Nishiguchi, G. Yamahata, and K. Chida, Ultimate electronics with
control of single electrons, EM-NANO2017 (June 18-21, 2017, Fukui, Japan).
[248]
T. Hayashi, M. Hiroki, and A. Fujiwara, A percolation aspect of hopping transport in amorphous
pentacene, 9th International Conference on Molecular Electronics and Bioelectronics (M&BE9)(June 26-28, 2017, Kanazawa, Japan).
[249]
N. Clement, K. Nishiguchi, and A. Fujiwara, Tunable ion adsorption kinetics on a nanoscaletransistor towards iontronics applications, 9th International Conference on Molecular Electronics andBioelectronics (M&BE9) (June 26-28, 2017, Kanazawa, Japan).
[250]
R. Sivakumarasamy, R. Hartkamp, J.-F. Dufreche, B. Siboulet, K. Nishiguchi, A. Fujiwara, and
N. Clement, Blood ionogram based on ion-specificity using a nanoscale silicon transistor, 9thInternational Conference on Molecular Electronics and Bioelectronics (M&BE9) (June 26-28, 2017,
Kanazawa, Japan).
[251](invited) A. Fujiwara, Ultimate Electronics with Control of Single Electrons, 7th Summer Schoolon Semiconductor/Superconducting Quantum Coherence Effect and Quantum Information (August27-29, 2017, Shuzenji, Japan).
[252]
M. Kataoka, S. P. Giblin, J. D. Fletcher, P. See, J. P. Griffiths, G. A. C. Jones, I. Farrer, D. A.
Ritchie, M. –H. Bae, Y.-H. Ahn, M. Seo, Y. Chung, N. Kim, G. Yamahata, T. Karasawa, A. Fujiwara,
R. Zhao, A. Rossi, F. E. Hudson, M. Möttönen, A. S. Dzurak, and T. J. B. M. Janssen, Accurate
operation of single-electron pumps beyond 1 GHz, BIPM Workshop "The Quantum Revolution in
Metrology" (September 28-29, 2017, Sèvres, France).
[253]
S. P. Giblin, P. See, J. D. Fletcher, J. P. Griffiths, G. A. C. Jones, I. Farrer, D. A. Ritchie, M. –H.
Bae, Y.-H. Ahn, M. Seo, Y. Chung, N. Kim, G. Yamahata, T. Karasawa, A. Fujiwara, R. Zhao, A.
Rossi, F. E. Hudson, M. Möttönen, A. Dzurak, T. J. B. M. Janssen and M. Kataoka, The robustness
and universality of tunable-barrier electron pumps , BIPM Workshop "The Quantum Revolution in
Metrology" (September 28-29, 2017, Sèvres, France).
[254](invited) Y. Takahashi, Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita, and Akira
Fujiwara, Evaluation of Coupled Triple Quantum Dots with Compact Device Structure, The 232nd
Electrochemical Society (ECS) Meeting, Oct. 1-6, 2017, National Harbor, USA)[255]
G. Yamahata, S. P. Giblin, M. Kataoka, T. Karasawa, and A. Fujiwara, Mechanism of
single-electron pumping via a single-trap level in silicon, The International School and Symposium on
Nanoscale Transport and phoTonics (ISNTT2017) (Kanagawa, Japan , Nov. 13-17, 2017) .
[256]
K. Chida, K. Nishiguchi, and A. Fujiawra, Power generation with Maxwell’s demon in a silicon
nanodevices, The International School and Symposium on Nanoscale Transport and phoTonics(ISNTT2017) (Kanagawa, Japan , Nov. 13-17, 2017) .
[257]
T. Yamaguchi, H. Tanaka, N. Clement, and A. Fujiwara, Coarse-grain molecular dynamics
simulation of vertical lamellar phase of diblock copolymer in a thin film, The International School andSymposium on Nanoscale Transport and phoTonics (ISNTT2017) (Kanagawa, Japan , Nov. 13-17,2017) .
[258]
J.Trasobares, J. Rech, T. Jonckheere, T. Martin, O. Aleveque, E. Levillain, V. Diez-Cabanes, Y.
Olivier, J. Cornil, J. P. Nys, R. Sivakumarasamy, K. Smaali, P. Leclere, A. Fujiwara, D. Theron, D.
Vuillaume, and N. Clement, Estimation of π–π Electronic Couplings from Current Measurements,[259]
J.Trasobares, J. Rech, T. Jonckheere, T. Martin, O. Aleveque, E. Levillain, V. Diez-Cabanes, Y.
Olivier, J. Cornil, J. P. Nys, R. Sivakumarasamy, K. Smaali, P. Leclere, A. Fujiwara, D. Theron, D.
Vuillaume, and N. Clement, Estimation of π–π Electronic Couplings from Current Measurements, The
International School and Symposium on Nanoscale Transport and phoTonics (ISNTT2017)(Kanagawa, Japan , Nov. 13-17, 2017) .
[260]

J. Trasobares, J. Rech, T. Jonckheere, T. Martin, O. Aleveque, E. Levillain, V. Diez-Cabanes, Y.
Olivier, J. Cornil, J.P. Nys, R. Sivakumarasamy, K. Smaali,P. Leclere, A. Fujiwara, D.Théron, D.
Vuillaume and N. Clément, Nanodot-molecule junctions : assessing intermolecular interactions andelectron transport at microwave frequencies with C-AFM and iSMM, MRS Spring meeting (April 2-6,
2018, Phoenix, Arizona).

[261]
J. Trasobares, J. Rech, T. Jonckheere, T. Martin, O. Aleveque, E. Levillain, V. Diez-Cabanes, Y.
Olivier, J. Cornil, J.P. Nys, R. Sivakumarasamy, K. Smaali, P. Leclere, A. Fujiwara, D. Théron, D.
Vuillaume, and N. Cément, Estimation of π-π intermolecular interactions from C-AFM on sub-10 nm
Au nanodot-molecule junctions, EMRS Spring meeting (June 18-22, 2018, Strasbourg, France).
[262]
G. Yamahata, M. Kataoka, S. Ryu, H.-S. Sim, N. Johnson, and A. Fujiwara, Coherent oscillationsof charge states in a Si single-electron pump, 2018 International Conference on Solid State Devices
and Materials (SSDM) (Tokyo , 2-5 September, 2018).
[263]
N. Johnson, G. Yamahata, and A. Fujiwara, Study of quantisation accuracy breakdown due tohigh temperature and high frequency in a silicon single-electron pump, 2018 International Conference
on Solid State Devices and Materials (SSDM) (Tokyo , 2-5 September, 2018).
[264] C. Gerbelot, T. Yamaguchi, H. Tanaka, A. Fujiwara and N. Clement, Full Counting Statistics ofSingle Electron Transport in a Biological Motor, 2018 International Conference on Solid State
Devices and Materials (SSDM) (Tokyo , 2-5 September, 2018).
[265] T. Hayashi, L. C. Duy, H. Murata, Y. Tokura, and A. Fujiwara, Low-frequency capacitance of
hopping transport materials, 34th International Conference on the Physics of Semiconductors (ICPS)(July 29-August 3, 2018, Montpellier, France).
[266](invited) K. Chida, K. Nishiguchi, and A. Fujiwara, Power generator driven by Maxwell’s
demon: Information-powered current in silicon single-electron devices, The International Symposiumfor Materials Scientists “Inspiration for Innovation by Interaction” (ISMS III) (Dec 3-4, 2018, Osaka,
Japan).
[267](invited) A. Fujiwara, G. Yamahata, K. Chida, and K. Nishiguchi, Tunable-barrier electron pumpfor quantum current standards and information-to-energy converters, China-Japan International

Workshop on Quantum Technologies (QTech2018) (Aug 23-24, 2018, Hefei, China).
[268](invited) A. Fujiwara, Ultimate electronics with silicon nanowire MOSFETs, Workshop on
Innovative Nanoscale Devices and Systems (WINDS) (Nov. 25-30, 2018, Hawaii, USA)[269]
M. Razanoelina, H. Firdaus, Y. Takahashi, A. Fujiwara, and Y. Ono, Si electron nano-aspirator
towards emerging hydro-electronics, 2019 Silicon Nanoelectronics Workshop (June 9-10, 2019, Kyoto,
Japan).
[270] T. Hayashi, Y. Tokura, and A. Fujiwara, Voltage statistics of variable-range hopping transport,
International Conference on Statistical Physics (StatPhys27) (July 8-12, 2019, Buenos Aires,
Argentina).
[271]
K. Nishiguchi and A. Fujiwara, Si-nanowire-FET sensor detecting high-frequency oscillation ofa multilayer-graphene MEMS by means of reflectometry technique, 28th International Microprocesses
and Nanotechnology Conference (MNC 2019), Hiroshima, Japan (Oct 28-31, 2019).
[272]
R. Ohsugi, H. Omi1, Y. Krockenberger, and A. Fujiwara, Oxide driven spin filtering on silicon,
28th International Microprocesses and Nanotechnology Conference (MNC 2019), Hiroshima, Japan(Oct 28-31, 2019).
[273](invited) Y. Takahashi, M. Shinohara, M. Arita, A. Tsurumaki-Fukuchi, A. Fujiwara, Y. Ono, K.
Nishiguchi, and H. Inokawa, Characteristics of Si Single-Electron Transistor under Illumination, The
236th Electrochemical Society (ECS) Meeting, Oct. 13-17, 2019, Atlanta, USA)[274]
(invited) A. Fujiwara, Silicon nanodevices for metrology and sensor applications, IEEE
Nanotechnology Materials and Devices Conference (IEEE NMDC2019) (Oct. 27-30, 2019,
Stockholm, Sweden)[275]
G. Yamahata, S. Ryu, N. Johnson, H-S. Sim, A. Fujiwara, and M. Kataoka, Effective
time-resolved detection of picosecond coherent dynamics in a Si dynamic quantum dot, The
International School and Symposium on Nanoscale Transport and phoTonics (ISNTT2019)(Kanagawa, Japan , Nov. 18-22, 2019) .
[276]
N. Johnson, G. Yamahata, and A. Fujiwara, Observation of cooling in a dynamic quantum dot ,The International School and Symposium on Nanoscale Transport and phoTonics (ISNTT2019)(Kanagawa, Japan , Nov. 18-22, 2019) .
[277]
R. Ohsugi, H. Omi, Y. Krockenberger, and A. Fujiwara, Tunneling properties of EuO/Si spin
filter junctions, The International School and Symposium on Nanoscale Transport and phoTonics(ISNTT2019) (Kanagawa, Japan , Nov. 18-22, 2019) .
[278]
C. Gerbelot, I. Madrid, F. Cleri, T. Yamaguchi, H. Tanaka, C. Demaille, T. Fujii, A. Fujiwara and
N. Clement, Q-Biol: A Quantum Bioelectrochemical Software Based on Single-electron Counting,
The International School and Symposium on Nanoscale Transport and phoTonics (ISNTT2019)(Kanagawa, Japan , Nov. 18-22, 2019) .
[279]
I. Madrid, C. Gerbelot, T. Yamaguchi, T. Fujii, A. Fujiwara and N. Clement, Full Counting
Statistics of Single-electron Transport in Redox-labeled DNA Motors, The International School andSymposium on Nanoscale Transport and phoTonics (ISNTT2019) (Kanagawa, Japan , Nov. 18-22,2019) .
[280]
(invited) A. Fujiwara, G. Yamahata, N. Johnson, S. Ryu, H-S. Sim, and M. Kataoka, Fast electron
dynamics in a silicon dynamic quantum dot, Int. Workshop on Cool Electrons in Flatlands (CEF2020)(June 15-24, 2020, Catania, Italy, held as virtual workshop)[281]
S. P. Giblin, G. Yamahata, A. Fujiwara, P. See, J. P. Griffiths, G. A. C. Jones, I Farrer, D. A.
Ritchie, and M. Kataoka, Directly Comparing the Current from Two Electron Pumps, 2020
Conference on Precision Electromagnetic Measurements (CPEM 2020) (Denver, August 24-28, 2020, ,held as virtual workshop).
[282]
S. P. Giblin, G. Yamahata, A. Fujiwara, and M. Kataoka, Calibration of Sensitive Ammeters
Using a Noiseless Electron Pump, 2020 Conference on Precision Electromagnetic Measurements(CPEM 2020) (Denver, August 24-28, 2020, held as virtual workshop).
[283]
K. Chida, A. Fujiwara, and K. Nishiguchi, Nanometer-scale temperature measurement based on
single-electron counting statistics in a nanowire Si MOSFET, 29th International Microprocesses andNanotechnology Conference (MNC 2020), Osaka, Japan (Nov. 9-12, 2020, held as virtual workshop).
[284]
K. Nishiguchi, and A. Fujiwara, Theoretical study on reflectometry technique for fast sensing ofan FET sensor, 29th International Microprocesses and Nanotechnology Conference (MNC 2020),
Osaka, Japan (Nov. 9-12, 2020, held as virtual workshop).
[285](invited) A. Fujiwara, G. Yamahata, N. Johnson, S. Ryu, H-S. Sim, and M. Kataoka, Fast electron
dynamics in a silicon dynamic quantum dot, The International Workshop on Computational
Nanotechnology (IWCN) (May 24 –June 6, 2021, Online, Korea).
[286] I. Madrid, A. Chovin, C. Gerberlot, S. C. Grall, S. Li, T. Fujii, T. Yamaguchi, K. Nishiguchi, A.
Fujiwara, S. H. Kim, A. Anne, C. Demaille, and N. Clement, Jahn-Teller Distortion in confined DNA,
2021 International Conference on Solid State Devices and Materials (SSDM) (6-9 September, 2021,
Online).
[287]
M. Kataoka, S. P. Giblin, G. Yamahata, and A. Fujiwara, Progress of silicon single-electron
pumps towards quantum current standards, Institute of Physics (IOP) Silicon Quantum Information
Processing Workshop (21 Sept, 2021).
[288](invited) A.Fujiwara, G. Yamahata, N. Johnson, Electron dynamics and device simulation ofsilicon single-electron pumps, Single-Electron Quantum Optics for Metrology Workshop (SEQUOIA
Meeting) (October 11-12, 2021, Online, France).
[289](invited) K. Nishiguchi, K. Chida, and A. Fujiwara, Single-electron manipulation in a
attofarad-capacitor DRAM, The 240th Electrochemical Society (ECS) Meeting (Oct. 10-14, 2021,
Online).
[290]
K. Chida, A. Fujiwara, and K. Nishiguchi, Electron Counting Statistics for Observation of
Thermoelectric Effect in a Si Electron Box, 20th International Conference on Modulated
Semiconductor Structures (MSS-20) (Oct. 31-Nov. 5, 2021 Online).
[291]
G. Yamahata, N. Johnson, and A. Fujiwara, Optimal accuracy of single-electron pumping using a
dynamic quantum dot, International Symposium on Novel maTerials and quantum Technologies(ISNTT2021) (Dec. 14-17, 2021).
[292]
K. Chida A. Fujiwara, and K. Nishiguchi, Observation of Seebeck Effect in a Silicon ElectronBox by Electron Counting Statistics, International Symposium on Novel maTerials and quantum
Technologies (ISNTT2021) (Dec. 14-17, 2021).
[293]
K. Nishiguchi, A. Fujiwara, and K. Chida, Room-temperature single-electron sensor for AC
signal beyond RC time constant ~ Energy transfer via non-leakage DRAM in non-equilibrium ~, 30th
International Microprocesses and Nanotechnology Conference (MNC 2021), Tokushima, Japan (Nov.
8-11, 2022).
[294]
S. Li, Y. Coffinier, C. Lagadec, F. Cleri, K. Nishiguchi, A. Fujiwara, T. Fujii, S–H. Kim, N.
Clement, Redox-labelled Electrochemical Aptasensors with Nano-supported Cancer Cells, 30th
International Microprocesses and Nanotechnology Conference (MNC 2021), Tokushima, Japan (Nov.
8-11, 2022).
[295](invited) A. Fujiwara, G. Yamahata, N. Johnson, Electron manipulation using a silicon dynamic
quantum dot, Workshop for the single-electron quantum technology, (Nov. 25-26, 2022, Buyeo,

Korea).
[296]
A. Fujiwara, G. Yamahata, N. Johnson, Device simulator for optimal design of silicon
single-electron pumps, 2022 Conference on Precision Electromagnetic Measurements (CPEM 2022)(Wellington, December 12-16 2022).
[297]

T. Fukuba, A. Fujiwara, K. Nishiguchi, M. Bergaud, S. Grall, S. Li, S. H. Kim, and N. Clément,International Symposium on Underwater Technology (UT23), Tokyo, Japan (Mar. 6-9 2023) .
[298](invited) A. Fujiwara, G. Yamahata, N. Johnson, Electron manipulation in a silicon dynamic
quantum dot, Compound Semiconductor Week (CSW20243) (May 29-Jun 2, 2023, Jeju, Korea).
[299](invited) A. Fujiwara, G. Yamahata, N. Johnson, Si dynamic quantum dot single-electron pumpfor metrology application, International Workshop on CNRS – Industry Collaborations (IWCIC)(Jun.13-14, 2023, Tokyo, Japan).

[300]
G. Yamahata, N. Johnson, and A. Fujiwara, Coulomb collisions in coupled Si single-electron
pumps, 25th International Conference on Electronic Properties of Two-Dimensional Systems(EP2DS-25), (Jul. 9-14, 2023, Grenoble, France).
[301]
A. Nabil, M. Razanoelina, M. Hori, A. Fujiwara, and Y. Ono, Drag of Electron-Hole Bilayer in
Silicon-on-Insulator at Low Temperature, 2023 Silicon Nanoelectronics Workshop (June 11-12, 2023,
Kyoto, Japan).
[302](invited) A. Fujiwara, and G. Yamahata, Metrology application of silicon single-electron pumps,
2023 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD 2023) (Jul. 10-11, 2023,
Yokohama, Japan).
[303]
K. Chida, A. Fujiwara, and K. Nishiguchi, Electron counting statistics for observation ofnoise-to-energy conversion in a nanoscale dot in Gaussian noise induced nonequilibrium steady states,
STATPHYS28 (Aug 7-11, 2023, Tokyo, Japan).
[304]
M. Petrychuk, A. Fujiwara, D. Pustovyi, Y. Zhang, H. Long, and S. Vitusevich, OpticallyControlled Nanoscale FET Toward Advanced Biosensing Applications, 2023 IEEE Int. Conf. on Noiseand Fluctuations (INCF 2023) (Oct. 17-20, 2023).
[305](invited) A. Fujiwara, G. Yamahata, N. Johnson, S. Nakamura, and N. -H. Kaneko, Siliconquantum dot single-electron pumps for the closure of the quantum metrology triangle, 244th The
Electrochemical Society (ECS) Meeting (Oct. 8-12, 2023).