Tankeblue
Silicon Carbide Substrates（Version:2022）

Product Specifications
4H N-Type
4H Semi-insulating

日本販売代理店： （株）ニューメタルス エンド ケミカルス コーポレーション
東京本社/ 鈴木 E-mail: katsu@newmetals.co.jp

Tel: 03-5202-5631

大阪支店/ 水戸 E-mail: mmito@newmetals.co.jp

Tel: 06-6202-5108

南E-mail: minami@newmetals.co.jp

天科合达 6 英寸 SiC 晶片产品标准6 inch diameter Silicon Carbide (SiC) Substrate Specification
精选级（Z 级）ZeroMPD Production
Grade(Z Grade)等级Grade
直径Diameter

厚度

Thickness

晶片方向Wafer Orientation

微管密度 1

Micropipe Density

电阻率 1Resistivity

主定位边方向主定位边长度

4H-N
4H-SI
4H-N
4H-SI
4H-N
4H-SI

149.5 mm~150.0 mm
350 μm±15 μm
350 μm±25 μm
500 μm±15 μm
500 μm±25 μm
Off axis : 4.0° toward < 1120 > ±0.5° for 4H-N, On axis : <0001>±0.5° for 4H-SI≤0.2 cm-2≤2 cm-2-2≤1 cm≤5 cm-2{10-10} ±5.0°
47.5 mm±2.0 mm
Notch
3 mm

4H-N
4H-SI

边缘去除Edge Exclusion
局部厚度变化/总厚度变化/弯曲度/翘曲度 LTV/TTV/Bow /Warp
表面粗糙度 1≤2.5 μm/≤6 μm/≤25 μm/≤35 μm
Ra≤1 nmRa≤0.2 nm
None
Cumulative area ≤0.05%
None
Cumulative area ≤0.05%

Ra≤0.5 nm
Cumulative length ≤ 20 mm, single length≤2 mm
Cumulative area ≤0.1%
Cumulative area≤3%
Cumulative area ≤3%

None

Cumulative length≤1×wafer diameter

None permitted ≥0.2mm width and depth≤500 cm-2

7 allowed, ≤1 mm each
N/A

PolishCMPRoughness边缘裂纹 (强光灯观测) Edge Cracks By High Intensity Light
六方空洞 (强光灯观测) 1 Hex Plates By High Intensity Light多型 (强光灯观测) 1Polytype Areas By High Intensity Light目测包裹物 (日光灯下观测) Visual Carbon Inclusions划痕 (强光灯观测)2Silicon Surface Scratches By High Intensity Light崩边 (强光灯观测) Edge Chips By High Intensity Light穿透螺位错 3（TSD） Threading screw dislocation≤15cm-2≤15 cm-2

0.015~0.028 Ω·cm
≥1E5 Ω·cm

0.015~0.024 Ω·cm
≥1E10 Ω·cm

Primary Flat Orientation
Primary Flat Length测试级（D 级）Dummy Grade(D Grade)

工业级（P 级）Standard Production
Grade(P Grade)硅面污染物 (强光灯观测)Silicon Surface Contamination By High Intensity LightPackaging
包装
Notes:
1Defects limits apply to entire wafer surface except for the edge exclusion area.
2The scratches should be checked on Si face only.
3 The dislocation data is only from KOH etched wafers.

≤5 μm/≤15 μm/≤40 μm/≤60 μm

None
Multi-wafer Cassette Or Single Wafer Container

日本販売代理店： （株）ニューメタルス エンド ケミカルス コーポレーション
東京本社/ 鈴木 E-mail: katsu@newmetals.co.jp

Tel: 03-5202-5631

大阪支店/ 水戸 E-mail: mmito@newmetals.co.jp

南 E-mail: minami@newmetals.co.jp

Tel: 06-6202-5108

天科合达 4 英寸 SiC 晶片产品标准4 inch diameter Silicon Carbide (SiC) Substrate Specification
精选级（Z 级）Zero MPD
Production

等级Grade工业级（P 级）Standard Production
Grade(P Grade)测试级（D 级）Dummy Grade(D Grade)

99.5 mm~100.0 mm
350 μm±25 μm
350 μm±15 μm
Thickness厚度
500 μm±15 μm
500 μm±25 μm
Off axis : 4.0° toward < 1120 > ±0.5° for 4H-N, On axis : <0001>±0.5° for 4H-SI
Wafer Orientation
晶片方向4H-N≤0.2 cm-2≤2 cm-2≤15 cm-2
微管密度 1
Micropipe
4H-SI≤ 1cm-2≤ 5 cm-2≤15 cm-2
Density
4H-N
0.015~0.024 Ω·cm
0.015~0.028 Ω·cm
电阻率 1Resistivity
4H-SI≥1E10 Ω·cm
≥1E5 Ω·cm{10-10} ±5.0°
Primary Flat Orientation
主定位边方向32.5 mm ± 2.0 mm
主定位边长度Primary Flat Length
18.0 mm ± 2.0 mm
次定位边长度Secondary Flat Length
Silicon face up: 90° CW. from Prime flat ±5.0°
次定位边方向Secondary Flat Orientation
3 mm
边缘去除Edge Exclusion
局部厚度变化/总厚度变化/弯曲度/翘曲度 LTV/TTV/Bow /Warp≤2.5 μm/≤5 μm/≤15 μm/≤30 μm≤10 μm/≤15 μm/≤25 μm/≤40 μm
PolishRa≤1 nmRoughness
表面粗糙度 1CMP
Ra≤0.2 nm
Ra≤0.5 nm
None边缘裂纹 (强光灯观测) Edge Cracks By High Intensity Light
Cumulative length ≤ 10 mm, single length≤2 mm
Cumulative area ≤0.05%
Cumulative area ≤0.1%
六方空洞 (强光灯测) 1 Hex Plates By High Intensity Light多型 (强光灯观测) 1 Polytype Areas By High Intensity LightNone
Cumulative area≤3%目测包裹物 (日光灯观测) Visual Carbon Inclusions
Cumulative area ≤0.05%
Cumulative area ≤3%
硅面划痕 (强光灯观测) 2
Cumulative length≤1×wafer diameter
None
Silicon Surface Scratches By High Intensity Light

直径Diameter

4H-N
4H-SI

Edge Chips High By Intensity Light崩边 (强光灯观测)硅面污染物 (强光灯观测)Silicon Surface Contamination By High Intensity
穿透螺位错 3（TSD） Threading screw dislocation

None permitted ≥0.2 mm width and depth≤500 cm
包装Packaging
Notes:
1 Defects limits apply to entire wafer surface except for the edge exclusion area.
2 The scratches should be checked on Si face only.
3 The dislocation data is only from KOH etched wafers.

5 allowed, ≤1 mm eachNone-2

N/AMulti-wafer Cassette Or Single Wafer Container

日本販売代理店： （株）ニューメタルス エンド ケミカルス コーポレーション
東京本社/ 鈴木 E-mail: katsu@newmetals.co.jp

Tel: 03-5202-5631

大阪支店/ 水戸 E-mail: mmito@newmetals.co.jp

南 E-mail: minami@newmetals.co.jp

Tel: 06-6202-5108

天科合达 2 英寸 SiC 晶片产品标准2 inch diameter Silicon Carbide (SiC) Substrate Specification
工业级Production Grade(P Grade)等级 Grade
直径厚度研究级
Research Grade(R Grade)Diameter

50.8 mm±0.38 mm

Thickness

330 μm±25 μm

晶片方向Wafer Orientation

微管密度

Micropipe Density电阻率 ※Resistivity

On axis : <0001>±0.5° for 4H-N/4H-SI, Off axis : 4.0° toward < 1120 > ±0.5° for 4H-N/4H-SI≤5 cm-2≤15 cm-2

4H-N≤50 cm-2

0.015~0.028 Ω·cm

主定位边方向主定位边长度

4H-SI
Primary Flat Orientation
Primary Flat Length15.9 mm ±1.7 mm

次定位边长度Secondary Flat Length

8.0 mm ±1.7 mm

次定位边方向Secondary Flat Orientation

边缘去除Edge Exclusion>1E5 Ω·cm{10-10} ±5.0°

Silicon face up: 90° CW. from Prime flat ±5.0°
1 mm

总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp
表面粗糙度※

试片级Dummy Grade(D Grade)≤15 μm /≤25 μm /≤25 μm
Polish Ra≤1 nmRoughnessCMP边缘裂纹 (强光灯观测) Edge Cracks By High Intensity
Light六方空洞 (强光灯观测) ※ Hex Plates By High Intensity
Light多型 (强光灯观测) ※ Polytype Areas By High Intensity
LightSi 面划痕 (强光灯观测) #Silicon Surface Scratches By High Intensity Light崩边 (强光灯观测) Edge Chips High By Intensity Lightlight硅面污染物 (强光灯观测)Silicon Surface Contamination By High IntensityRa≤0.5 nm
None

1 allowed, ≤1 mm

Cumulative area≤1 %Cumulative area≤3 %None

Cumulative area≤2 %Cumulative area≤5%

3 scratches to 1×wafer
diameter cumulative lengthNone

5 scratches to 1×wafer diameter
cumulative length
3 allowed, ≤0.5 mm each

8 scratches to 1×wafer diameter cumulative
length5 allowed, ≤1 mm each

包装
Packaging
Notes:※Defects limits apply to entire wafer surface except for the edge exclusion area.
# The scratches should be checked on Si face only.

None
Multi-wafer Cassette Or Single Wafer Container

日本販売代理店： （株）ニューメタルス エンド ケミカルス コーポレーション
東京本社/ 鈴木 E-mail: katsu@newmetals.co.jp

Tel: 03-5202-5631

大阪支店/ 水戸 E-mail: mmito@newmetals.co.jp

南 E-mail: minami@newmetals.co.jp

Tel: 06-6202-5108