Awards
27th JSAP Awards (Year 2005)
Prof. Michio Tajima
Chairman, JSAP Award Selection Committee

The selection committee had solicited application for the candidates
for the 27th JSAP awards through our monthly journal “OYO BUTURI”

the committee members reread all the selected papers and through theprocess of discussion and examination, decided the second-stage candi-

from January to March issues (both self-recommendation and appro-dates and report them to the board meeting. After final deliberation

priate recommendation). The committee accepted 43 candidate papers
for JJAP Awards for the Best Original Paper, 11 for JJAP Awards for theat the board meeting, we decided to present awards to the followingwinners. The awards ceremony was held on September 7 after the 66th

Most Promising Young Scientist, and 10 recommended documents forAutumn Meeting of the Japan Society of Applied Physics (TokushimaJSAP Award for the Best Review Paper. Three members were in chargeof reference for each candidate paper and based on their report, theUniversity). In addition, commemorative speeches of the winners wereheld at the relevant workshop sited from September 7 to September 11.

committee discussed and decided on the first-stage candidates. Then all

Recipient List
1. Award for the Best Original Paper(1) Recipients:

Takao MURAKOSHI (Tokimec),
Yasuo ENDO (Tokimec),
Keisuke FUKATSU (Tokimec),
Sigeru NAKAMURA (Tokimec),
Masayoshi ESASHI (Tohoku Univ.)
Electrostatically Levitated Ring-Shaped
Rotational-Gyro/Accelerometer
Jpn. J. Appl. Phys. Vol. 42 (2003) pp. 2468-2472,
Part 1, No. 4B(2) Recipients:

Takao NAKAMURA, Shinsuke FUJIWARA,
Hiroki MORI, Koji KATAYAMA (SumitomoElectric Industries)
Novel Cladding Structure for ZnSe-based WhiteLight Emitting Diodes with Longer Lifetimes ofover 10,000 h
Jpn. J. Appl. Phys. Vol. 43 (2004) pp. 1287-1292,
Part 2, No. 4A(3) Recipients:

Shinji YUASA, Akio FUKUSHIMA,Taro NAGAHAMA, Koji ANDO,
Yoshishige SUZUKI(NanoElectronics Research Institute, AIST)High Tunnel Magnetoresistance at Room
Temperature in Fully Epitaxial Fe/MgO/Fe
Tunnel Junctions due to Coherent
Spin-Polarized Tunneling
Jpn. J. Appl. Phys. Vol. 43 (2004) pp. L588-L590,
Part 2, No. 4B(4) Recipients:

Wenhong SUN, Vinod ADIVARAHAN,Maxim SHATALOV, Youngbae LEE,
Shuai WU, Jinwei YANG, Jianping ZHANG,M. Asif KHAN (Univ. of South Carolina)
Continuous Wave Milliwatt Power AlGaN Light
Emitting Diodes at 280 nm
Jpn. J. Appl. Phys. Vol. 43 (2004) pp. L1419-L1421,
Part 2, No. 11A(5) Recipients:

Masami ANDO (KEK),
Hiroshi SUGIYAMA (KEK),
Toshiyuki KUNISADA (Okayama Univ.),
Daisuke SHIMAO (Graduate Univ. for
Advanced Studies),
Ken TAKEDA (Okayama Univ.),
Hiroyuki HASHIZUME (Okayama Univ.),
Hajime INOUE (Okayama Univ.)
Construction of X-ray Dark-Field Imaging
with a View Size of 80 mm Square and First
Visualization of Human Articular Cartilage ofFemoral Head under a Nearly Clinical Condition
Jpn. J. Appl. Phys. Vol. 43 (2004) pp. L1175-L1177,
Part 2, No. 9A/B

2. Award for the Most Promising
Young Scientist(1) Hiromasa SHIMIZU (Univ. of Tokyo)
First Demonstration of TE Mode Nonreciprocal
Propagation in an InGaAsP/InP Active
Waveguide for an Integratable Optical Isolator
Hiromasa SHIMIZU and Yoshiaki NAKANO
Jpn. J. Appl. Phys. Vol. 43 (2004) pp. L1561-L1563,
Part 2, No. 12A(4) Masataka HIGASHIWAKI (NICT)InAlN/GaN Heterostructure Field-EffectTransistors Grown by Plasma-Assisted
Molecular-Beam Epitaxy
Masataka HIGASHIWAKI and Toshiaki MATSUI
Jpn. J. Appl. Phys. Vol. 43 (2004) pp. L768-L770,
Part 2, No. 6B

3. Award for the Best Review Paper(1) Recipients:

Yasushi NANISHI (Ritsumeikan Univ.),
Tsutomu ARAKI (Ritsumeikan Univ.),
Takao MIYAJIMA (SONY)InN and InGaN crystal growth and structuraland property characterization
OYO BUTURI, Vol. 72 (2003) No. 5, pp. 565-571,
Tutorials(2) Recipient:

Yoshihisa YAMAMOTO (Stanford Univ.)
Single photons for quantum informationsystems
OYO BUTURI, Vol. 72 (2003) No. 2, pp. 146-156,
Comprehensive Research Report(3) Recipient:(2) Yuichi OSHIMA (Hitachi Cable)

Yuji AWANO (Fujitsu)

Preparation of Freestanding GaN Wafers
by Hydride Vapor Phase Epitaxy with
Void-Assisted Separation
Yuichi OSHIMA, Takeshi ERI, Masatomo SHIBATA,Haruo SUNAKAWA, Kenji KOBAYASHI, Toshinari
ICHIHASHI and Akira USUI
Jpn. J. Appl. Phys. Vol. 42 (2003) pp. L1-L3, Part 2,No. 1A/B

Electron device applications of carbon
nanotubes
OYO BUTURI, Vol. 73 (2004) No. 9, pp. 1207-1211,
Our Research(3) Masumi SAITOH (Univ. of Tokyo)
Room-Temperature Observation of
Negative Differential Conductance Dueto Large Quantum Level Spacing in SiliconSingle-Electron Transistor
Masumi SAITOH and Toshiro HIRAMOTO
Jpn. J. Appl. Phys. Vol. 43 (2004) pp. L210-L213,
Part 2, No. 2A

JSAP International No.13 (January 2006)

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