Commercialization of the world’s smallest and thinnest crystal timing device
with a product thickness of 1/2 or less than conventional products
June 13, 2017
DAISHINKU CORP. (President: Sohei Hasegawa) is pleased to announce that we havecommercialized a crystal timing device “Arch.3G” series with a remarkably reduced
thinness by a structure that differs from conventional products. This series adopts a newstructure different from conventional products using a conductive adhesive, ceramic
package and lid materials in order to make the device smaller, thinner and with greater
reliability.
With the Arch.3G series, both the resonator and oscillator realize the world’s thinnest
thickness of 1/2 or less in comparison with conventional structures. This thinness
enables us to propose new value that will contribute to space saving for molded SiP(system in package) modules in which this product is stacked on silicon die andembedded in a substrate, etc.
This series is currently available as a sample, and mass production is scheduled to startin May 2018.
* Source: survey by DAISHINKU CORP. valid as of June 12, 2017

DS1008JSeries nameApplications
Production BaseArch.3GSmartphones, IoT/wearable devices, automotive,embedded in IC/SiP
Tottori Production Div./Tokushima Production Div.
Resonators

TypeSize
Height (typ.)Mass production date

DX1008J
1.0×0.8mm
0.13mmMay, 2018

DX0806J
0.8×0.6mm
0.13mmUndecided

Oscillators
SPXO
TCXO
DS1008J
DB1008J
1.0×0.8mm
1.0×0.8mm
0.23mm0.23mmMay, 2018
May, 2018

With conventional structures, the smaller the product the more difficult it is to securemargins for application accuracy of a conductive adhesive and mounting position whencrystal elements are mounted in a package. In order to solve this issue, it was necessary
to fundamentally review product and process designs.
By using our independently developed bonding technique Fine Seal technology, thisseries has realized hermeticity equal to that of conventional structures by making WLP(Wafer Level Package) in which 3 layer wafers using crystal as a base are attached.
With a monolithic structure, this makes it possible to integrate the holding part andresonating part without a conductive adhesive and solves process problems describedabove, and at the same time, it significantly improves impact resistance. Furthermore,quality risks are remarkably reduced by performing wafer cleaning to bonding under avacuum atmosphere. With these advancements, we will continue to contribute toautomotive applications that require ever-increasing reliability including automatic
operation.
In addition, as crystal elements of the AT cut crystal resonator have become thinner inconnection with higher frequency, problems have occurred with quality and productivity
arising from the process. On the other hand, handling of the Arch.3G series has become
easier throughout the production process with the adoption of WLP, and these problems
have been resolved. From hereon, we will focus our efforts on introduction of thisproduct in response to Wi-Fi markets that require higher frequencies in association withincreases in speed and capacitance, and information network-related products that areexpected to expand in number, corresponding to 200MHz fundamental waves.
Furthermore, realization of remarkable thinness allows us to offer incredible value thatassumes new mounting application scenes for crystal devices such as embedding in SiP
modules that are expected to expand and IC packages. Also, this product can flexibly
respond to package terminal designs and it is now possible to form various terminals
such as shapes for wire-bonding.
< Comparison with conventional products>~ Resonators ~0.30 ㎜0.13 ㎜

DX1008J

Conventional product~Oscillators ~0.50 ㎜0.23 ㎜

DS1008J

Conventional product<Electrical specification>
TypeItem

Size
Output Frequency Range
Supply Voltage

DS1008J

1.0 × 0.8 × 0.23 mm Typ.
1 ～ 100 MHz
1.6 ～ 3.6 V
1.3mA (Vcc = 1.8V, 48MHz),
Current Consumption
2.0mA (Vcc = 1.8V, 96MHz)
Frequency Tolerance±20×10-6, ±30×10-6, ±50×10-6, ±100×10-6
Operating Temperature Range- 40 ～ + 85℃
Output Specification
CMOS
Storage Temperature Range- 40 ～ +85℃
Packing Unit
3000pcs. / reel（φ180）
Consult our sales representative for other specifications.
<Dimensions>