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TRAˍ120ˍ045
120-GHz Wide-Band IQ Transceiver with Antennas on Chip

Data Sheet
Status:Date:

Author:Filename:

Preliminary

27-Jun-2023

Silicon Radar GmbH

DataˍSheetˍTRAˍ120ˍ045ˍV0.5

Version:

Product number:

Package:

Marking:

Page:

0.5

TRAˍ120ˍ045

QFN32, 5 × 5 mm²

TRA045YYWW

1 of 16

Anlage 8ˍTemplateˍDatenblattˍRevE

Date: 19-May-2020

Rev E

Document:

Annex to VAˍU03ˍ01

120-GHz Wide-Band Transceiver TRAˍ120ˍ045
Data Sheet Version 0.5 27-Jun-2023

Version Control
Version
0.1
0.2

Changed section
Template, contents
All sections

0.3

Section 40.4

All sections

0.5

Section 4 and 7

Description of change
Initial release
Review and update with latest test
results
TX output power revised
Principle drawings revised
Data according to new measurements
updatedSupply Current and ESD value updated.
Antenna measurements included.

-2-Reason for change
Update following first pre-series
fabrication
Power level specified at output ofpower amplifier.
Planned revision

Latest measurements typical andmaximum values revised, respectively,
Antenna characteristics performed in
new millimeter-wave chamber.

120-GHz Wide-Band Transceiver TRAˍ120ˍ045
Data Sheet Version 0.5 27-Jun-2023

Table of Contents
1Features ................................................................................................................................ 4

1.11.2Overview .................................................................................................................................................. 4
Applications.............................................................................................................................................. 423

Block Diagram ....................................................................................................................... 5
Pin Configuration .................................................................................................................. 6

3.1
3.2

Pin Assignment ......................................................................................................................................... 6
Pin Description ......................................................................................................................................... 6

4Specification.......................................................................................................................... 7

4.1
4.2
4.3
4.4

Absolute Maximum Ratings ..................................................................................................................... 7
Operating Range ...................................................................................................................................... 7
Thermal Resistance .................................................................................................................................. 7
Electrical Characteristics .......................................................................................................................... 8

5Packaging .............................................................................................................................. 9

5.1
5.2
5.3

Outline Dimensions .................................................................................................................................. 9
Package Code ........................................................................................................................................... 9
Antenna Position ...................................................................................................................................... 9

6Application.......................................................................................................................... 10

6.1
6.2
6.3
6.4

Application Circuit Schematic ................................................................................................................ 10Power Cycling ......................................................................................................................................... 10
Evaluation Kit ......................................................................................................................................... 10
Input / Output Stages............................................................................................................................. 11

7

Measurement Results.......................................................................................................... 12-3-120-GHz Wide-Band Transceiver TRAˍ120ˍ045
Data Sheet Version 0.5 27-Jun-2023

1Features






1.1

Wide-band radar frontend (RFE) with antennas on chipFrequency bandwidth of 20 GHz
Frequency range from 116 GHz to 130 GHz
Single supply voltage of 3.3 V
Fully ESD protected device
Power consumption of 560 mW (full duty cycle)
Integrated low phase noise VCO
Receiver with homodyne quadrature mixer
RX and TX dipole antennas
QFN32 leadless plastic package 5 × 5 mm²
Pb-free, RoHS compliant package
IC is available as bare die as well

Overview

The radar frontend TRAˍ120ˍ045 is an integrated wideband transceiver circuit with antennas on chip. It provides afrequency bandwidth of greater than 20 GHz. The circuit includes a low-noise amplifier (LNA), quadrature mixers, a
poly-phase filter, a voltage-controlled oscillator, divide-by-64 with differential output and transmit and receiveantennas (see Figure 1). The RF signal from the oscillator is directed to the RX path via buffer circuits and polyphasefilter to provide quadrature LO signal to the two RX mixers. The RX signal coming from RX antenna is amplified byLNA and converted to baseband by two mixers with quadrature LO signal. The integrated VCO has two analog tuninginputs. These two tuning inputs can be used to obtain the full tuning range of greater than 20 GHz.
The on-chip VCO together with integrated frequency divider and external fractional-N PLL can be used for frequency
modulated continuous wave (FMCW) radar operation. With a fixed oscillator frequency, it can be used in continuous
wave (CW) mode. Other modulation schemes such as FSK can be implemented by utilizing the analog tuning inputs.
The IC is fabricated in a BiCMOS technology.

1.2

Applications

The main application field of the wideband transceiver radar frontend (RFE) without beam focusing element is in
short range (in the order of about 5 meters) and high-resolution radar systems. By using dielectric lenses, the range
can be increased from a multiple of 10 meters to up to 100 meters. Depending on the measurement target
specification a trade-off between measurement resolution and range is required.
The RFE can be used in FMCW mode as well as in CW mode. The transceiver is designed for maximum bandwidthby using two tuning inputs with different tuning ranges and tuning slopes. This makes it possible to extend thebandwidth to the entire tuning range mentioned above.

-4-

120-GHz Wide-Band Transceiver TRAˍ120ˍ045
Data Sheet Version 0.5 27-Jun-2023

2

Figure 1

Block Diagram

Block Diagram-5-

120-GHz Wide-Band Transceiver TRAˍ120ˍ045
Data Sheet Version 0.5 27-Jun-2023

3

Pin Configuration

3.1

Pin Assignment

Figure 2

Pin Assignment (QFN32, 5 mm x 5 mm, top view)

3.2

Pin Description

Table 1PinNo.
1, 8, 17234567

Pin Description
Description
Name
GND
Ground
VCC
Supply voltage (3.3 V)
IFQn
IFQp
Quadrature IF outputs, DC coupled
IFIn
IFIp
RXEN
Receiver enable input: 3.3 V – receiver enabled, 0 – receiver off;
CMOS input with 100-kΩ pull-up resistor
ICNTL
VCO frequency tuning input voltage 0 … 3.3 V, negative characteristic fTX = f(VICNTL)VT
VCO frequency tuning input voltage 0 … 4.5 V, positive characteristic fTX = f(VVT)HPEN
TX high power control: 3.3 V – high power, 0 or open – low power;
CMOS input with 100-kΩ pull-down resistor
PWR
TX-PA and LO-PA power enable: 3.3 V – on, 0 (or open) – off;
CMOS input with 100-kΩ pull-down resistor
DIVpDivider outputs, positive and negative terminal, matched to 50 Ω load, DC coupled, external
decoupling capacitor required
DIVn

18192021222324
9 - 16,25 - 32(33)DIVEN
NCDivider enable input, high-active: 3.3 V – divider enable, 0 – divider off;
CMOS input with 100-kΩ pull-down resistor
Not connected. These pins may be connected to ground. Performance will not be affected

GND

Exposed die attach pad of the QFN package, must be soldered to ground-6-120-GHz Wide-Band Transceiver TRAˍ120ˍ045
Data Sheet Version 0.5 27-Jun-2023

4Specification

4.1

Absolute Maximum Ratings

Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part.
Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum
ratings.
Table 2Absolute Maximum Ratings
Parameter
SymbolSupply voltage
VCC
DC voltage at tuning input VTVVT
DC voltage at tuning input ICNTLVICNTLDC voltage at enable inputs
VEN
Junction temperature
TJ
Storage temperature range
TSTG
ESD robustness
VESD

Min
-0.3
-0.3
-0.3
-65

Max
3.6
4.7
3.6
VCC + 0.171501501.0UnitVV
V
V°C°C
kVCondition / Remarkto GND

Inputs RXEN, DIVEN, PWR, HPEN

Human body model, HBM 1)

1) CLASS 1C according to ESDA/JEDEC Joint Standard for Electrostatic Discharge Sensitivity Testing, Human Body Model
Component Level, ANSI/ESDA/JEDEC JS-001-20114.2

Operating Range

Table 3Operating Range
Parameter
Ambient temperature
Supply voltage
DC voltage at tuning input ICNTL
DC voltage at tuning input VT
DC voltage at enable inputs
DC voltage at other inputs

SymbolTA
VCC
VICNTLVVTVENVx

Min-40
3.13
0000

Max
85
3.47
VCC
4.5
VCC
VCC

Unit°CV
V
V
V
V

Remarks / Condition(3.3 V ± 5%)

Note: Do not drive input signals without power supplied to the device.
Power-up sequence should be the following:
1. Connect to ground (optional)
2. Apply VCC
3. Set all control voltages
Power-down sequence should be the reverse of the above.

4.3

Thermal Resistance

Table 4
Thermal ResistanceParameter
Thermal resistance,
junction-to-ambient

SymbolMin

TypRthja-7-Max

Unit

Remarks / Condition

30

K/W

JEDEC JESD51-5

120-GHz Wide-Band Transceiver TRAˍ120ˍ045
Data Sheet Version 0.5 27-Jun-2023

4.4

Electrical Characteristics

TA = -40°C to +85°C unless otherwise noted. Typical values measured at TA = 25°C and VCC = 3.3 V.
Table 5
Electrical Characteristics
Parameter
SymbolDC Parameters
Supply current consumption
ICC
Enable input voltage,
low level
Enable input voltage,high level
VCO tuning voltage
RF Parameters
TX output start frequency
TX output stop frequency
TX tuning full bandwidth
VCO slope f vs. V for VT
VCO slope f vs. V for ICNTL

Min

VENˍL

0VENˍH

2.05

VVT
VICNTL00

fTX, minfTX, max
ΔfTX
ΔfTX/
ΔVVT
ΔfTX /ΔVICNTL
PTX_PA

111.5
130.5
19

TypMax

Unit

Remarks / Condition

170

196

mA

Maximum current withICNTL = VCC

0.85

V

VCC

V

4.5
VCC

VV

115.5
137.2
25

GHz
GHz
GHz
GHz/VVT = 0, ICNTL = 3.3 V
VT = 4.5 V, ICNTL = 0VT and ICNTL
for fTX = 119 GHz

GHz/V

for fTX = 127 GHz

2.15

113.9
134.1
22
6.33
3.9

Transmitter output power-8.0-3.0+3.5
dBm
Note 1(dBm EIRP)
Output power reduction withPTXˍadj
3dB
HPEN = 0Divider output power
Pdiv-8-5-2dBm
Note 2Divider output frequency
fdiv
1.73
1.9
2.15
GHzPN
Phase Noise at-127-125-116
dBc/Hz Measured at divider output
1.9 GHz, 1 MHz offset
RX conversion gain
RXgain11.5dB
Simulated value at 122 GHzIF frequency range
fIF0200
MHzIF output impedance
ZOUT600Ω
Differential output
IQ amplitude imbalance-1.8+1.8dB
IQ phase imbalance-1010deg
Receiver Noise figure (DSB)
9dB
Simulated at 122 GHz.
Input compression point
1dB-14dBm
Simulated
Note 1:
Typical value of ‘Transmitter output power’ is average value for fTX = 116 – 134 GHz
Note 2:
Measured single-ended. Divider outputs are loaded with 50 Ω, external decoupling capacitors are required.
No 50-Ω match is required in application.

-8-

120-GHz Wide-Band Transceiver TRAˍ120ˍ045
Data Sheet Version 0.5 27-Jun-2023

5Packaging

5.1

Outline Dimensions

Figure 35.2

Outline Dimensions of QFN32 Package with Exposed Pad

Package Code

Top-Side Markings

5.3

Figure 4

TRA045YYWW

Antenna Position

Antenna Position (top view)-9-120-GHz Wide-Band Transceiver TRAˍ120ˍ045
Data Sheet Version 0.5 27-Jun-2023

6

Application

6.1

Application Circuit Schematic

Figure 5

Application Circuit

Figure 6

Suggested schematic of a loop filter and generation of control voltages VT, ICNTL for full bandwidth operation

6.2

Power Cycling

It is possible to reduce power consumption by power cycling the radar front end. Rapid power cycling can beimplemented with voltage rise times between 10 and 100 µs. At power-up, it must be ensured that no input signal
is driven high before the supply voltage is stable. At power-down, all input signals must be pulled low before thesupply voltage is switched off.

6.3

Evaluation Kit

Silicon Radar offers evaluation kits for speeding up radar development. Please review our website and productsheets for more information: https://www.siliconradar.com/evalkits/.
The SiRad Easy® r4 platform supports development for many of Silicon Radar’s integrated IQ transceivers including
radar front end boards for TRAˍ120ˍ045. It serves as reference hardware and provides a design environment
including a graphical user interface for parameter setting. Its functionality and communication protocol are
adaptable to development projects.

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120-GHz Wide-Band Transceiver TRAˍ120ˍ045
Data Sheet Version 0.5 27-Jun-2023

6.4Input / Output Stages

The following figures show the simplified circuits of the input and output stages. It is important that the voltage
applied to the input pins never exceeds VCC by more than 0.3 V, with exception of inputs VT (max. rating 4.7 V) andICNTL (max. rating 3.6 V), see section 4.1 Absolute Maximum Ratings. Otherwise, the supply current may be
conducted through the upper ESD protection diode connected at the pin.

Figure 7

Equivalent I/O Circuits- 11 -120-GHz Wide-Band Transceiver TRAˍ120ˍ045
Data Sheet Version 0.5 27-Jun-2023

Measurement Results
140

140

135

135

130

130
TX Frequency (GHz)TX Frequency (GHz)7125120

0.00.9
1.2
1.5
1.8
2.1
2.4
3.0
3.3115110105ICTL in V

125120
0.00
1.02
1.53
2.04
2.56
3.074.60

115
110
105

0,00,51,0

1,52,02,53,03,54,00,04,50,51,0

Figure 8

1,52,02,53,03,5Tuning voltage ICNTL (V)Tuning Voltage VT (V)VCO tuning with input VT

Figure 9

VCO tuning with input ICNTL

145

8140

71356

VCO Sensitivity (GHz/V)

TX Frequency (GHz)

VT in V

100100130125120115

5432110ICNTL = 0VICNTL = 3.3V

1105000,511,522,533,50Voltage at Charge Pump Output (V)Figure 10

VCO tuning using suggested control circuitry shownin Figure 6, ‘Suggested schematic of a loop filter… ‘Figure 110,3 0,6 0,9 1,2 1,5 1,8 2,1 2,4 2,7Tuning Voltage (V)33,3 3,6

VCO sensitivity with tuning voltage VVT-40-4,01.7604 GHz
ICNTL = 0V, DIVp-4,21.964 GHz-60

ICNTL = 0V, DIVnICNTL = 3.3V

Phase Noise (dBc/Hz)

Divider Output Power (dBm)ICNTL = 3.3V, DIVp

-4,4-4,6-4,8-5,0-5,2-5,4-5,6-80-100-120-140-5,8-160-6,00

Figure 120,3 0,6 0,9 1,2 1,5 1,8 2,1 2,4 2,7Tuning Voltage (V)313,3 3,6Divider output power with tuning voltage VVT
measured single ended divider output DIVp

10100

1000

10000

Frequency Offset (kHz)

Figure 13- 12 -Phase noise at frequency offset at divider output forfTX = 112.6 GHz and fTX = 125.7 GHz

120-GHz Wide-Band Transceiver TRAˍ120ˍ045
Data Sheet Version 0.5 27-Jun-2023

Figure 14

TX gain measured without (left) and with (right) lens vs. frequency

Figure 15 RX gain measured without (left) and with (right) lens vs. frequency.

Figure 16

TX Antenna Characteristics in E-plane, measured
w/o lens in CW-Mode of operation

Figure 17- 13 -TX Antenna Characteristics in H-plane, measured
w/o lens in CW-Mode of operation

120-GHz Wide-Band Transceiver TRAˍ120ˍ045
Data Sheet Version 0.5 27-Jun-2023

Figure 18

RX Antenna Characteristics in E-plane, measured
w/o lens in CW-Mode of operation

Figure 19RX Antenna Characteristics in H-plane, measured
w/o lens in CW-Mode of operation

Figure 20

TX Antenna Characteristics in E-plane, measured
with lens in CW-Mode of operation

Figure 21

TX Antenna Characteristics in H-plane, measured
with lens in CW-Mode of operation

Figure 22

RX Antenna Characteristics in E-plane, measured
with lens in CW-Mode of operation

Figure 23

RX Antenna Characteristics in H-plane, measured
with lens in CW-Mode of operation- 14 -4160

2150
Supply Current (mA)

Output Power - EIRP (dBm)

120-GHz Wide-Band Transceiver TRAˍ120ˍ045
Data Sheet Version 0.5 27-Jun-2023

0-2-4140130
120-6110-8at ftx.min
at ftx.max

100-10116

Figure 24118120122 124 126 128
TX Frequency (GHz)130132-40134-20

0204060

80

Ambient Tenperature (°C)

TX output power (EIRP) vs frequency, measured w/olens in CW-Mode of operation.

Figure 25- 15 -

Supply Current vs. Ambient Temperature.

120-GHz Wide-Band Transceiver TRAˍ120ˍ045
Data Sheet Version 0.5 27-Jun-2023

Disclaimer
Silicon Radar GmbH 2023. The information contained herein is subject to change at any time without notice.
Silicon Radar GmbH assumes no responsibility or liability for any loss, damage or defect of a product which is caused in whole or in part by(i)use of any circuitry other than circuitry embodied in a Silicon Radar GmbH product,(ii)
misuse or abuse including static discharge, neglect, or accident,(iii)
unauthorized modifications or repairs which have been soldered or altered during assembly and are not capable of being tested by Silicon
Radar GmbH under its normal test conditions, or(iv)improper installation, storage, handling, warehousing, or transportation, or(v)being subjected to unusual physical, thermal, or electrical stress.
Disclaimer: Silicon Radar GmbH makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express
or implied warranties, either in fact or by operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or aparticular purpose, and any implied warranty arising from course of dealing or usage of trade, as well as any common-law duties relating to accuracy or lackof negligence, with respect to this material, any Silicon Radar product and any product documentation. Products sold by Silicon Radar are not suitable orintended to be used in a life support applications or components, to operate nuclear facilities, or in other mission critical applications where human life may
be involved or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below.
CRITICAL USE EXCLUSION POLICY: BUYER AGREES NOT TO USE SILICON RADAR GMBH'S PRODUCTS FOR ANY APPLICATIONS OR IN ANY COMPONENTS USED IN
LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFEOR PROPERTY MAY BE AT STAKE.
Silicon Radar GmbH owns all rights, titles and interests to the intellectual property related to Silicon Radar GmbH's products, including any software, firmware,copyright, patent, or trademark. The sale of Silicon Radar GmbH’s products does not convey or imply any license under patent or other rights. Silicon Radar
GmbH retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the sale of products or services bySilicon Radar GmbH. Unless otherwise agreed to in writing by Silicon Radar GmbH, any reproduction, modification, translation, compilation, or representationof this material shall be strictly prohibited.

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