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K band MMIC
Voltage Controlled Oscillator

K-VCO-2325

Previously named LE-Ka1310301

GaAs PHEMT MMIC Voltage Controlled Oscillator 23.5 - 24.8 GHz

Overview

Features

K-VCO-2325 is a bare die Voltage Controlled Oscillator MMIC, with integrated sub-•23.5 – 24.8GHz.

harmonic mixer, covering frequencies from 23.5GHz to 24.8GHz, by using a tuning•

15dBm output power.

voltage between 0 and 1.6V. This MMIC provides a constant 15dBm output power•

Integrated sub-harmonic mixer forphase stability.

over all tuning voltages, running from a 3V supply with currents <60mA. By applying
a signal at F/2 from the required operational frequency (F) to the integrated subharmonic mixer, and provides an additional output signal which is proportional infrequency to F and which can be introduced into a PLL for frequency stability.

Applications•High speed data communications.

The MMIC is fully passivated for additional protection and has all bond pads and•Space communications.

backside gold plated. The MMIC is compatible with precision die attach methods, as•

IOT.

well as thermo-compression and thermosonic wire bonding, making it ideal for MCM•Security.

and hybrid microcircuit applications. All data shown is measured with the chip in a 50
Ohm environment and contacted with RF probes.

K band Datasheet

K-VCO-2325

Issue date: 30 April 21

DOC REV 3

Page 1 of 9

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.

GaAs PHEMT MMIC Voltage Controlled Oscillator 23.5 - 24.8GHz

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product datasheet

Specification Overview

Parameter

Min.
Min

Output Frequency (Fout)

23.5		

Output Power

Typ.

Max.
24.8

GHz15		dBm

Reference / LO Frequency

10.8

PLL / IF Frequency

0		

Phase Noise @100KHz Offset(1Hz Bandwidth)		
Supply Voltage, VOSC, VAMP
Tuning Voltage

Units1213.6GHz

3.2

GHzNotes
The tests indicated have all been
performed with 100pF de-coupling
capacitors on all bias pads.
All tests are carried out at 25°C.

-100		 dBc/Hz
3		V0Current

0.6

1.6

V

56		mA

Absolute Maximum Ratings

Parameter			Rating

Supply Voltage (VOSC, VAMP)			

5V

Tuning Voltage			

0 – 2V

Storage Temperature			−65°C to +150°C

Channel Temperature		
Operating Temperature			K band Datasheet

K-VCO-2325+150°CESD (electrostatic discharge)
sensitive device. Charged devices
and circuit boards can discharge
without detection. Although thisproduct features proprietary
protection circuitry, damage may
occur on devices subjected to ESD.
Proper ESD precautions should
be taken to avoid performancedegradation or loss of functionality.

−40°C to +85°C

Issue date: 30 April 21

DOC REV 3Page 2 of 9

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.

GaAs PHEMT MMIC Voltage Controlled Oscillator 23.5 - 24.8GHz

www.arralis.com

product datasheet

Measured Performance Data(Vosc, Vamp=3V, Icc=56mA, 12REF=12GHz, 8dBm)
25.0

Figure 1
Output Frequency

24.8
24.6

Frequency (GHz)

24.4
24.2
24.0
23.8
23.6
23.4
23.2

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

Vtune (V)

(Vosc, Vamp=3V, Icc=56mA, 12REF=12GHz, 8dBm)
20

Figure 2
Output Power19

Output Power (dBm)

18
1716
15
1413
1211
10

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

Vtune (V)K band Datasheet

K-VCO-2325

Issue date: 30 April 21

DOC REV 3

Page 3 of 9No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.

GaAs PHEMT MMIC Voltage Controlled Oscillator 23.5 - 24.8GHz

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product datasheet

Measured Performance Data
(Vosc, Vamp=3V, Icc=56mA, 12REF=12GHz, 8dBm)
0.9

Figure 3
PLL Output Frequency

0.80.7Frequency (MHz)

0.6
0.5
0.4
0.3
0.2
0.1
0.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

Vtune (V)-10									(Vosc, Vamp=3V, Icc=56mA, 12REF=12GHz, 8dBm)-11

Figure 4
PLL Output Power-12Output Power (dBm)

-13
-14
-15
-16
-17-18
-19
-20

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

Vtune (V)K band Datasheet

K-VCO-2325

Issue date: 30 April 21

DOC REV 3Page 4 of 9

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.

GaAs PHEMT MMIC Voltage Controlled Oscillator 23.5 - 24.8GHz

www.arralis.com

product datasheet

Measured Performance Data
(Vosc, Vamp=3V, 12REF=12GHz, 8dBm)
40

Figure 5
Current Draw

35

Current (mA)

30252015Oscillator
Osc. Amplifier

100.5

0.0

0.0

0.2

0.40.60.8

1.0

1.2

1.4

1.6Vtune (V)K band Datasheet

K-VCO-2325

Issue date: 30 April 21

DOC REV 3Page 5 of 9

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.

GaAs PHEMT MMIC Voltage Controlled Oscillator 23.5 - 24.8GHz

www.arralis.com

product datasheet

Outline Drawing
3881.32081.3
65

82

2700

82

105

82

86

10582

65

86

975

1111

82
105

1251

957

86

82

86

817

681

83

65

881.3

65

224
360
500
4380

Notes
1.

All dimensions are in um.

Die Packing Information2.

Typical DC bond pads are 80um square.

All die are delivered using gel-paks

3.

RF bond pads are 105 x 80um.

unless otherwise requested.

4.

All pads have gold metalisation.

5.

Gold backside metalisation.

6.

Backside metal is ground.

7.

Connections are not required for unlabelled bond pads.

8.

Die thickness is 100umK band Datasheet

K-VCO-2325

Issue date: 30 April 21

DOC REV 3Page 6 of 9

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.

GaAs PHEMT MMIC Voltage Controlled Oscillator 23.5 - 24.8GHz

www.arralis.com

product datasheet

Pad Descriptions

NameDescription

RFOUTOutput RF pad for oscillator frequency. This pad is AC coupled.

VTUNEFrequency tuning voltage pad.

VOSC

Bias pad for oscillator circuit.

VAMP

Bias pad for amplifier circuit.

12REF

Input pad for 12GHz reference or LO signal. This pad is AC coupled.

Connection Configurations
To BIAS Connections

VTUNE

VOSC

VAMP

VCO
OUT
PLL / IFOUT

REF / LOIN

K band Datasheet

K-VCO-2325

Issue date: 30 April 21

DOC REV 3Page 7 of 9

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.

GaAs PHEMT MMIC Voltage Controlled Oscillator 23.5 - 24.8GHz

www.arralis.com

product datasheet

General Notes on Assembly

Die should be mounted on conductive material such as gold-plated metal to provide agood ground and suitable heat sink, if necessary.
1.

Attaching the die using Au/Sn preforms is preferable. The Eutectic melt for Au/Sn occurs at approximately 280oC so the die (plus mount and preform) is initiallyheated up to 180oC and then it is heated for approximately 10 seconds to 280oC
using a nitrogen heat gun. The device will survive 10 seconds at this temperature.
The static breakdown for GaAs devices is approximately 330oC.

2.

Pure, dry nitrogen should be used as the heat source.

3.

If the devices cannot be lifted/ placed by a vacuum device, then ESD die-lifting
tweezers are preferable.

4.

Supply lines should be decoupled with 100pF capacitors. Larger planar capacitors
could be used if available.

5.

Aluminium wire must not be used.

Disclaimer
The information contained herein is believed to be reliable; however, Arralis makes no warranties
regarding the information and assumes no responsibility or liability whatsoever for the use of theinformation contained herein. All information is subject to change without notice, therefore customers
should obtain the latest relevant information before placing orders for Arralis products. The information
contained herein does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any
other intellectual property rights.
This information does not constitute a warranty with respect to the product described, and Arralis
disclaims any and all warranties either expressed or implied, relating to sale and/or use of Arralis products
including liability or warranties relating to fitness for a particular purpose, consequential or incidental
damages, merchantability, or infringement of any patent, copyright or other intellectual property right.
Without limiting the generality of the foregoing, Arralis products are not warranted or authorised for use
as critical components in medical, life-saving, or life-sustaining applications, or other applications wherea failure would reasonably be expected to cause severe personal injury or death.
Copyright 2021 © Arralis

K band Datasheet

K-VCO-2325

Issue date: 30 April 21

DOC REV 3

Page 8 of 9

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.

©2021 Arralis Ltd. All rights reserved. Trademarks and registered trademarks are the property of their respective owners.

Arralis USA OfficeArralis European Offices+(1) 386 301 3249 (USA)t: +(44) 1793 239670 (UK)e: sales@arralis.com

K band Datasheetarralis.com
K-VCO-2325

e: emilie.wren@arralis.com

Issue date: 30 April 21

DOC REV 3

Page 9 of 9

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.