DATA SHEET
www.onsemi.com

Silicon Carbide (SiC)
MOSFET - EliteSiC,
23 mohm, 650 V, M3S,
TO-247-3L
NTHL023N065M3S

V(BR)DSSRDS(ON) TYP

ID MAX

650 V

23 mW @ VGS = 18 V

70 A

DFeatures• Typical RDS(on) = 23 mW @ VGS = 18 V
• Ultra Low Gate Charge (QG(tot) = 69 nC)• High Speed Switching with Low Capacitance (Coss = 153 pF)• 100% Avalanche Tested• This Device is Halide Free and RoHS Compliant with Exemption 7a,GS
N−CHANNEL MOSFET

Pb−Free 2LI (on second level interconnection)Applications• SMPS, Solar Inverters, UPS, Energy Storages, EV Charging
Infrastructure

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

650

V

Gate−to−Source Voltage

VGS−8/+22

VID

70

A

PD

263

W

Parameter

Continuous Drain Current

TC = 25°C

Power Dissipation
Continuous Drain Current

TC = 100°C

Power Dissipation

ID

49

A

PD

131

W

Pulsed Drain Current(Note 1)

TC = 25°C
tp = 100 ms

IDM

218

A

Continuous Source−DrainCurrent (Body Diode)

TC = 25°C
VGS = −3 VIS40

A

TC = 100°C
VGS = −3 V
TC = 25°C
VGS = −3 V
tp = 100 ms

ISM

181

ASingle Pulse Avalanche Energy(Note 2)

ILPK = 19.6 A,
L = 1 mH

EAS

192

mJTJ, Tstg

−55 to+175°C

TL

270°C

Lead Temperature for Soldering Purposes(1/8″ from case for 10 seconds)

Stresses exceeding those listed in the Maximum Ratings table may damage thedevice. If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be affected.
1. Repetitive rating, limited by max junction temperature.
2. EAS of 192 mJ is based on starting TJ = 25°C, L = 1 mH, IAS = 19.6 A,
VDD = 100 V, VGS = 18 V

© Semiconductor Components Industries, LLC, 2023

September, 2024 − Rev. 3

MARKING DIAGRAM

HL023N
065M3SAYWWZZ

23

Pulsed Source−Drain Current(Body Diode)(Note 1)

Operating Junction and Storage Temperature
Range

TO−247−3LD
CASE 340CX

1

HL023N065M3S = Specific Device CodeA= Assembly Location
Y= Year
WW = Work Week
ZZ= Lot Traceability

ORDERING INFORMATIONDevice

PackageShipping

NTHL023N065M3S

TO−247−3L

30 Units /TubePublication Order Number:
NTHL023N065M3S/DNTHL023N065M3S
THERMAL CHARACTERISTICS
Symbol

Value

Unit

Thermal Resistance, Junction−to−Case (Note 3)

Parameter

RqJC

0.57°C/W

Thermal Resistance, Junction−to−Ambient (Note 3)

RqJA

40

3. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particularconditions noted.

RECOMMENDED OPERATING CONDITIONSParameter
Operation Values of Gate−to−Source Voltage

Symbol

Value

Unit

VGSop−5...−3+18V

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)Parameter

SymbolTest Conditions

Min

TypMaxDrain−to−Source Breakdown Voltage

V(BR)DSSVGS = 0 V, ID = 1 mA, TJ = 25°C

Drain−to−Source Breakdown Voltage
Temperature Coefficient

DV(BR)DSS/DTJID = 1 mA, Referenced to 25°C

Zero Gate Voltage Drain Current

IDSS

Gate−to−Source Leakage Current

IGSS

Unit

650−−

V−

89−mV/°C

VDS = 650 V, TJ = 25°C−−10mAVDS = 650 V, TJ = 175°C (Note 5)−−500mA

VGS = −8/+22 V, VDS = 0 V−−±1.0mAmW

OFF CHARACTERISTICS

ON CHARACTERISTICS
Drain−to−Source On Resistance

Gate Threshold Voltage
Forward TransconductanceRDS(on)VGS = 18 V, ID = 20 A, TJ = 25°C

−2333

VGS = 18 V, ID = 20 A, TJ = 175°C(Note 5)−35−

VGS = 15 V, ID = 20 A, TJ = 25°C

−29−

VGS = 15 V, ID = 20 A, TJ = 175°C(Note 5)−37−

VGS(TH)

VGS = VDS, ID = 10 mA, TJ = 25°C

22.84VgFS

VDS = 10 V, ID = 20 A (Note 5)

−

14−

S

VDS = 400 V, VGS = 0 V, f = 1 MHz(Note 5)

−

1952

−

pF−

153−

−

13−

−

69−

−

19−

CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance

CISS

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

Total Gate Charge

QG(TOT)

VDD = 400 V, ID = 20 A,
VGS = −3/18 V (Note 5)nC

Gate−to−Source Charge

QGSGate−to−Drain Charge

QGD−

18−

Gate ResistanceRG

f = 1 MHz−

4.0−

W

Turn−On Delay Timetd(ON)−12−nsTurn−Off Delay Timetd(OFF)

VGS = −3/18 V, VDD = 400 V,
ID = 20 A, RG = 4.7 W, TJ = 25°C
(Notes 4 and 5)−

38−

SWITCHING CHARACTERISTICS

Rise Time

tr−

30−

Fall Time

tf

−

11−

Turn−On Switching Loss

EON−

174−

Turn−Off Switching Loss

EOFF

−

44−

Total Switching Loss

ETOT

−

218−

www.onsemi.com
2mJ

NTHL023N065M3S
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued)
Parameter

SymbolTest Conditions

Min

TypMaxUnit

Turn−On Delay Timetd(ON)

−11−

ns

Turn−Off Delay Timetd(OFF)VGS = −3/18 V, VDD = 400 V,
ID = 20 A, RG = 4.7 W, TJ = 175°C(Notes 4 and 5)−

45−

SWITCHING CHARACTERISTICS

Rise Time

tr−

29−

Fall Time

tf

−

14−

Turn−On Switching Loss

EON−

173−

Turn−Off Switching Loss

EOFF−

64−

Total Switching Loss

ETOT−

237−

ISD = 20 A, VGS = −3 V, TJ = 25°C

−

4.5

6.0

ISD = 20 A, VGS = −3 V, TJ = 175°C(Note 5)

−

4.2−

VGS = −3 V, IS = 20 A,
dI/dt = 1000 A/ms, VDS = 400 V,
TJ = 25°C (Note 5)

−20−

−

11−

9−

mJ

SOURCE−TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage

VSDV

ns

Reverse Recovery TimetRR

Charge Timeta

Discharge Timetb−

Reverse Recovery Charge

QRR

−

95−

nC

Reverse Recovery Energy

EREC

−

6.9−

mJ

Peak Reverse Recovery Current

IRRM

−

9.8−

A

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. EON/EOFF result is with body diode.
5. Defined by design, not subject to production test.

www.onsemi.com
3

NTHL023N065M3S
TYPICAL CHARACTERISTICS

Figure 1. Output Characteristics

Figure 2. Output Characteristics

Figure 3. Transfer Characteristics

Figure 4. On−Resistance vs Gate Voltage

Figure 5. On−Resistance vs Drain Current

Figure 6. On−Resistance vs Junction
Temperature

www.onsemi.com
4

NTHL023N065M3S
TYPICAL CHARACTERISTICS
35
VGS = 0 VTJ = 25°C
f = 1 MHzEOSS, Stored Energy (mJ)

3025201510500100200300

400

500600700

VDS, Drain to Source Voltage (V)Figure 7. Capacitance Characteristics

18Figure 8. Stored Energy vs Drain to Source
Voltage−10

ID = 20 A

15963400 V
520 V
650 V

0−30204060−4

VGS=−5V
VGS=−3V
VGS=0V
VGS=+15V
VGS=+18V−200−20−40−60−140

VDS , Drain to Source Voltage (V)Figure 10. Reverse Conduction Characteristics

1000

SINGLE PULSE
TJ = Max rated
R qJC = 0.57°C/W
TC = 25°C

0−20−40−60−80−100−120

VDS , Drain to Source Voltage (V)0−10080

ID, DRAIN CURRENT (A)−6TJ = 175°Ct P< 20us

ID, Drain Current (A)−2−80

VDS, Drain to Source Voltage (V)−8−4−120

Figure 9. Gate Charge Characteristics−10−6VGS=−5V
VGS=−3V
VGS=0V
VGS=+15V
VGS=+18V

12ID, Drain Current (A)EOSS, Stored Energy (mJ)

−8TJ = 25 °C
t P< 20us

100

101

0.1

−140pulse duration =DCpulse duration =1mspullse duration =100us
pulse duration =10uspulse duration =1us
Rdson
BV boundary
pulse boundary
0.1

110100VDS , DRAIN−TO−SOURCE VOLTAGE (V)Figure 11. Reverse Conduction Characteristics

Figure 12. Safe Operating Area

www.onsemi.com
51000

NTHL023N065M3S
TYPICAL CHARACTERISTICS

IAV, Avalanche Current (A)10025°C
150°C

Rthjc = 0.57°C/W

1010.0010

0.01000.10001.000010.0000

TAV, Avalanche Time (ms)Figure 13. Avalanche Current vs Pulse Time(UIS)

300

TC = 25°C
VGS = −3/18 V
VDD = 400 V
RG = 4.7 W

250

Eon25CEoff25CEtot25C

TC = 175°C
VGS = −3/18 V
VDD = 400 V
RG = 4.7 W

200
Switching Loss (mJ)E, Switching Loss (mJ)

250

Figure 14. Maximum Power Dissipation vsCase Temperature

200
150
100

150
Eon175C
Eoff175C
Etot175C

10050500510ID, Drain Current (A)15020

5Figure 15. Inductive Switching Loss vs Drain
Current

400

300

TC = 25°C
VGS = −3/18 V
VDD = 400 V
ID = 20 A

250
Switching Loss (mJ)

Switching Loss (mJ)

200

Eon25CEoff25C
Etot25C

20

Figure 16. Inductive Switching Loss vs Drain
Current

TC = 25°C
VGS = −3/18 V
RG = 4.7 W
ID = 20 A

300

1015ID, Drain Current (A)200150100100500300

350

400
450500550
VDS, Drain−to−Source Voltage (V)Eon25CEoff25C
Etot25C0600

1Figure 17. Inductive Switching Loss vs Drain
Voltage

234567RG, Gate Resistance (W)89Figure 18. Inductive Switching Loss vs Gate
Resistancewww.onsemi.com
610

NTHL023N065M3S
TYPICAL CHARACTERISTICS
300

TC = 25°C
VGS = −3/18 V
VDD = 400 V
ID = 10 A

Switching Loss (mJ)

250
200
150

Eon25CEoff25C
Etot25C1005001357RG, Gate Resistance (W)

9Figure 19. Inductive Switching Loss vs GateResistance

Figure 20. Thermal Response Characteristics

www.onsemi.com
7MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−247−3LD
CASE 340CXISSUE ADATE 06 JUL 2020

GENERICMARKING DIAGRAM*XXXXXXXXX
AYWWG

DOCUMENT NUMBER:DESCRIPTION:XXXXX = Specific Device CodeA= Assembly Location
Y= Year
WW= Work Week
G= Pb−Free Package*This information is generic. Please refer todevice data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.

98AON93302G
TO−247−3LD

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1

onsemi andare trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particularpurpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.

© Semiconductor Components Industries, LLC, 2018www.onsemi.com

onsemi,, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of theinformation, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or useof any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance mayvary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any licenseunder any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. ShouldBuyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

ADDITIONAL INFORMATIONTECHNICAL PUBLICATIONS:Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com

ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative atwww.onsemi.com/support/sales