DATA SHEET
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Silicon Carbide (SiC)
MOSFET - EliteSiC,
23mohm, 650 V, M3S,
TO-247-4L

V(BR)DSSRDS(ON) TYP

ID MAX

650 V

23 mW @ 18 V67 A

D

NTH4L023N065M3S

S1: Kelvin Source
S2: Power Source

GFeatures

 Typical RDS(on) = 23 mW @ VGS = 18 V
 Ultra Low Gate Charge (QG(tot) = 69 nC)
 High Speed Switching with Low Capacitance (Coss = 153 pF)
 100% Avalanche Tested
 This Device is Halide Free and RoHS Compliant with Exemption 7a,S2

S1

N−CHANNEL MOSFET

Pb−Free 2LI (on second level interconnection)

Applications

 SMPS, Solar Inverters, UPS, Energy Storages, EV Charging
Infrastructure

DS2
S1 G

MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

650

V

Gate−to−Source Voltage

VGS−8/+22

V

ID

67

A

PD

245

W

ID

47

A

PD

122

W

Continuous Drain Current

TC = 25C

Power Dissipation
Continuous Drain Current

TC = 100C

Power Dissipation
Pulsed Drain Current(Note 1)

TC = 25C
tp = 100 msIDM

225

A

Continuous Source−DrainCurrent (Body Diode)

TC = 25C
VGS = −3 VIS

37

A

TC = 100C
VGS = −3 V

23Pulsed Source−Drain Current(Body Diode)(Note 1)

TC = 25C
VGS = −3 V
tp = 100 ms

ISM

188

A

Single Pulse Avalanche Energy(Note 2)

ILPK = 19.6 A,
L = 1 mH

EAS

192

mJ

TJ, Tstg−55 to+175

C

TL

270

C

Operating Junction and Storage Temperature
Range
Lead Temperature for Soldering Purposes(1/8 from case for 10 seconds)

TO−247−4L
CASE 340CJMARKING DIAGRAM

H4L023065M3S
AYWWZZ

H4L023065M3S = Specific Device CodeA= Assembly Location
Y= Year
WW = Work Week
ZZ= Lot Traceability

ORDERING INFORMATIONDevice

PackageShipping

NTH4L023N065M3S

TO−247−4L

30 Units /Tube

Stresses exceeding those listed in the Maximum Ratings table may damage thedevice. If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be affected.
1. Repetitive rating, limited by max junction temperature.
2. EAS of 192 mJ is based on starting TJ = 25C, L = 1 mH, IAS = 19.6 A,VDD = 100 V, VGS = 18 V.

 Semiconductor Components Industries, LLC, 2023

September, 2024 − Rev. 5

1Publication Order Number:
NTH4L023N065M3S/D

NTH4L023N065M3S
THERMAL CHARACTERISTICS
SymbolValue

Unit

Thermal Resistance, Junction−to−Case (Note 3)

Parameter

RqJC

0.61

C/W

Thermal Resistance, Junction−to−Ambient (Note 3)

RqJA

40

3. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particularconditions noted.

RECOMMENDED OPERATING CONDITIONSParameter
Operation Values of Gate−to−Source Voltage

Symbol

Value

Unit

VGSop−5...−3+18V

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.

ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified)Parameter

SymbolTest Conditions

MinTypMax

Unit

OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage

V(BR)DSSVGS = 0 V, ID = 1 mA, TJ = 25C650−−V

Drain−to−Source Breakdown Voltage
Temperature Coefficient

DV(BR)DSS/DTJ

ID = 1 mA, Referenced to 25C−89−mV/C

VDS = 650 V, TJ = 25C−−10mA

Zero Gate Voltage Drain Current

IDSS

VDS = 650 V, TJ = 175C (Note 5)−−500mA

Gate−to−Source Leakage Current

IGSS

VGS = −8/+22 V, VDS = 0 V−−

1.0mARDS(on)VGS = 18 V, ID = 20 A, TJ = 25C−

2333mW

VGS = 18 V, ID = 20 A, TJ = 175C(Note 5)−34−

VGS = 15 V, ID = 20 A, TJ = 25C−29−

VGS = 15 V, ID = 20 A, TJ = 175C(Note 5)−37−

VGS = VDS, ID = 10 mA, TJ = 25C

22.84VVDS = 10 V, ID = 20 A (Note 5)

−

14−

S

VDS = 400 V, VGS = 0 V, f = 1 MHz(Note 5)−1952−pF

−

153−

−

13−

−

69−

−

19−

ON CHARACTERISTICS
Drain−to−Source On Resistance

Gate Threshold Voltage
Forward Transconductance

VGS(TH)gFS

CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance

CISS

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSSTotal Gate Charge

QG(TOT)

VDD = 400 V, ID = 20 A,
VGS = −3/18 V (Note 5)nC

Gate−to−Source Charge

QGS

Gate−to−Drain Charge

QGD−

18−

Gate ResistanceRG

f = 1 MHz−

4.0−

W

Turn−On Delay Timetd(ON)−11−nsTurn−Off Delay Timetd(OFF)VGS = −3/18 V, VDD = 400 V,
ID = 20 A, RG = 4.7 W, TJ = 25C
(Notes 4 and 5)−35−

SWITCHING CHARACTERISTICS

Rise Time

tr−

15−

Fall Time

tf

−

9.6−

Turn−On Switching Loss

EON−

51−

Turn−Off Switching Loss

EOFF−29−

Total Switching LossETOT−80−www.onsemi.com
2mJ

NTH4L023N065M3S
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) (continued)
Parameter

SymbolTest Conditions

Min

TypMax

Unit−

9.6−

ns−

41−

SWITCHING CHARACTERISTICS
Turn−On Delay Timetd(ON)

Turn−Off Delay Timetd(OFF)

VGS = −3/18 V, VDD = 400 V,
ID = 20 A, RG = 4.7 W, TJ = 175C(Notes 4 and 5)

Rise Time

tr−

14−

Fall Time

tf−

12−

Turn−On Switching Loss

EON−

51−

Turn−Off Switching Loss

EOFF−45−

Total Switching LossETOT−96−

ISD = 20 A, VGS = −3 V, TJ = 25C−

4.5

6.0

ISD = 20 A, VGS = −3 V, TJ = 175C(Note 5)

−

4.2−

VGS = −3 V, IS = 20 A,dI/dt = 1000 A/ms, VDS = 400 V,
TJ = 25C (Note 5)

−

19−

−

11−

8−

mJ

SOURCE−TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage

VSDV

ns

Reverse Recovery TimetRR

Charge Timeta

Discharge Timetb−

Reverse Recovery Charge

QRR

−

97−

nC

Reverse Recovery Energy

EREC−

8.7−

mJ

Peak Reverse Recovery Current

IRRM

−11−

A

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. EON/EOFF result is with body diode.
5. Defined by design, not subject to production test.

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3

NTH4L023N065M3S
TYPICAL CHARACTERISTICS

Figure 1. Output Characteristics

Figure 2. Output Characteristics

Figure 3. Transfer Characteristics

Figure 4. On−Resistance vs Gate Voltage

Figure 5. On−Resistance vs Drain Current

Figure 6. On−Resistance vs Junction
Temperature

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4NTH4L023N065M3S
TYPICAL CHARACTERISTICS
35VGS = 0 V
TJ = 25Cf = 1 MHz

EOSS, Stored Energy (mJ)

3025201510500100200300

400500600

700

VDS, Drain to Source Voltage (V)Figure 7. Capacitance Characteristics

Figure 8. Stored Energy vs Drain to Source
Voltage−1018−8

ID = 20 A

EOSS, Stored Energy (mJ)−2

VGS = 0 V

ID, Drain Current (A)9630−40

VGS = +15 V
VGS = +18 V−60

TJ = 25Ctp < 20 ms−80−100400 V
520 V
650 V

000−20VGS = −3 V122040−12060−14080

VDS, Drain to Source Voltage (V)VDS, Drain to Source Voltage (V)Figure 9. Gate Charge Characteristics−10−4

VGS = −5 V

15−3−6−8−6−4−2Figure 10. Reverse Conduction Characteristics

001000VGS = −5 V

−20

VGS = −3 V

100−40VGS = +15 V
VGS = +18 V

ID, Drain Current (A)ID, Drain Current (A)VGS = 0 V

−60

TJ = 175Ctp < 20 ms

−80
−100

101−1200.1−140

SINGLE PULSE
TJ = Max Rated
RqJC = 0.61 C/W
TC = 25C0.1

VDS, Drain to Source Voltage (V)1pulse duration =DC
pulse duration =1ms
pullse duration =100us
pulse duration =10us
pulse duration =1usRdson
BV boundary
pulse boundary

10100

VDS, Drain to Source Voltage (V)Figure 11. Reverse Conduction Characteristics

Figure 12. Safe Operating Area

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51000

NTH4L023N065M3S
TYPICAL CHARACTERISTICS

IAV, Avalanche Current (A)

100

25C
150C

1010.0010

0.01000.10001.000010.0000

TAV, Avalanche Time (ms)Figure 13. Avalanche Current vs Pulse Time(UIS)

90

100

TC = 25C
VGS = −3/18 V
VDD = 400 V
RG = 4.7 W

808060504030
20510ID, Drain Current (A)706050403020

Eon25CEoff25C
Etot25C

100TC = 175C
VGS = −3/18 V
VDD = 400 V
RG = 4.7 W

90

Switching Loss (mJ)

70
E, Switching Loss (mJ)

Figure 14. Maximum Power Dissipation vsCase Temperature

Eon175C
Eoff175C
Etot175C

10015205Figure 15. Inductive Switching Loss vs Drain
Current

180

Switching Loss (mJ)

Switching Loss (mJ)

140
120
100

Eon
EoffEtot

80
6040
20300

350

400
450500550VDS, Drain−to−Source Voltage (V)20Figure 16. Inductive Switching Loss vs Drain
Current

TC = 25C
VGS = −3/18 V
RG = 4.7 W
ID = 20 A

160

1015ID, Drain Current (A)600150140130120110
1009080706050403020100

TC = 25C
VGS = −3/18 V
VDD = 400 V
ID = 20 A

Eon25CEoff25C
Etot25C
1Figure 17. Inductive Switching Loss vs Drain
Voltage

234567RG, Gate Resistance (W)89Figure 18. Inductive Switching Loss vs GateResistancewww.onsemi.com
610NTH4L023N065M3S
TYPICAL CHARACTERISTICS
90TC = 25C
VGS = −3/18 V
VDD = 400 V
ID = 10 A

80Switching Loss (mJ)

70
60
5040

Eon25CEoff25C
Etot25C

3020100147RG, Gate Resistance (W)

10Figure 19. Inductive Switching Loss vs Gate
Resistance

Figure 20. Thermal Response Characteristics

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7MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−247−4LD
CASE 340CJISSUE A

DOCUMENT NUMBER:DESCRIPTION:

98AON13852G
TO−247−4LD

DATE 16 SEP 2019

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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