<Multi-Function Transistor>

RT8H255CIGBT Gate Driver②⑤③④654Outline
①A②B
③VCC
④GATEIN⑤GND⑥DI255
１20.33±0.05⑥0.12±0.01①0～0.1IGBT Gate Driver

0.95±0.05

APPLICATION

0.81

The miniaturization of a set and high-density mounting
are possible.

Unit:mm

2.8±0.1
0.65±0.2 1.50±0.1 0.65±0.2

1.9±0.1

FEATUREPIN CONFIGURATION

1.1±0.1

RT8H255C is a integrating IGBT gate drive circuit.
This product can drive IGBT with two external transistors.
GATEIN terminal have hysteresis input voltage.
Case of “L→H” propagation, B terminal output low signal
at over 2.80V. Case of “H→L” propagation, B terminal
output high signal at under 2.48V.

2.80±0.2

DESCRIPTION

3BLOCK DIAGRAM
VCC

DI

36A
1GATEIN
4Reference
voltage

DriverB
2GND
5100621

<Multi-Function Transistor>

RT8H255CIGBT Gate Driver

ABSOLUTE MAXIMUM RATINGS（ Ta=25℃, unless otherwise noted ）SymbolParameter

Vcc
VGIN
PdKθTjTstg

Supply voltage
IN terminal voltage
Power Dissipation
Thermal derating factor
Junction temperature
Storage temperature

Topr

Operating temperatureConditions

Ratings

Unit

Non condensing

3010200
1.6
150－40～150V
VmWmW/℃℃℃

Non condensing－20～75℃

Ta≧25℃

ELECTRICAL CHARACTERISTICS（ Ta=25℃,VCC=20V,Terminal is open, unless otherwise notec ）SymbolParameter

Test conditions

Vcc

Operating supply voltage
range

ICC1

Circuit current 1

ICC2

Circuit current 2

VOB2

B terminal output low
voltage 2

Vth1

GATEIN terminal thresholdvoltage 1（Low→High）

GATEIN：0→5V VMB：Low

Vth2

GATEIN terminal thresholdvoltage 2（High→Low）

GATEIN：5→0V VMB：HighIOUTA1

A terminal output current 1IOUTA2

A terminal output current 2IINB

B terminal sink current

IOUTB

B terminal source current

GATEIN=0V
GATEIN=5V
GATEIN=5V

GATEIN=0V、A=B=0.7V IMAGATEIN=5V、A=18V IMAGATEIN=5V、B=0.3V IMBGATEIN=0V、B=0.7V IMB

Min.

Limits
Typ.

Max.

10

2025

V-

490

735uA-

500

750uA-00.28

V

2.54

2.80

3.10

V

2.24

2.48

2.74

V-101uA-810-600-390uA

70010801460uA

-1120-830-540uA

Unit100621

<Multi-Function Transistor>

RT8H255CIGBT Gate Driver

Application circuit
VCCDI36A
12SC3052
IGBTGATEIN
Gate signal

4150Ω

Driver

Referencevoltage

10ΩB22SC3052

GND
5<TYPICAL CHARACTERISTICS>
ICC1：Circuit current 1
700

200

600

150

500
ICC1[uA]Power dissipation Pd[mW]25010050400
300
200
10000255075 100 125 150
Ambient temperature Ta.[℃]010152025

VCC[V]

ICC2：Circuit current 2

VOB2：B terminal output low voltage 27000.30

6000.25
VOB2（V)ICC2(uA)

500
400
3000.200.152000.10100

0.05

00.00

101520VCC[V]

2510152025

VCC[V]

100621

<Multi-Function Transistor>

RT8H255CIGBT Gate Driver

VTHIN2：GATEIN terminal threshold voltage 2（High→Low）

3.2

2.8

3.1

2.7

3.0

2.6
VTHIN2[V]VTHIN1[V]VTHIN1：GATEIN terminal threshold voltage 1（Low→High）

2.9
2.8
2.7

2.4
2.3

2.6

2.2

2.5

2.1
2.0

2.4
1015201025

1525

VCC[V]IOUTA1：：A terminal output current 1

IOUTA2：A terminal output current 20-100

1.0
IOUTA2[uA]-2000.50.0-0.5-300-400-500-600-700-1.0-800-900-1.51015201025152025

VCC[V]

VCC[V]IOUTB：B terminal source current

IINB：B terminal sink current
01600

-200

1400
IOUTB[uA]1200
IINB（uA)

20

VCC[V]

1.5

IOUTA1[uA]

2.5

1000
800
600-400-600-800

400-1000

2000-1200
101520VCC[V]

2510152025

VCC[V]

100621

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·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there isalways the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placementof substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap.
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Aug.2016