120-GHz IQ Transceiver TRAˍ120ˍ002
Preliminary Data Sheet
Revision 0.8 2018-11-05

Silicon Radar GmbHIm Technologiepark 1
15236 Frankfurt (Oder)
Germany
fon +49.335.557 17 74
fax +49.335.557 10 50
https://www.siliconradar.com

TRAˍ120ˍ002
120-GHz Highly Integrated IQ Transceiver with Antennas on Chip
in Silicon Germanium Technology

Preliminary Data Sheet
Status:Date:

Author:Filename:

Preliminary

2018-11-05

Silicon Radar GmbH

DatasheetˍTRAˍ120ˍ002ˍV0.8

Version:

Product number:

Package:

Marking:

Page:

0.8

TRAˍ120ˍ002

QFN32, 5 × 5 mm²TRA002
YYWW

1 of 15-1-120-GHz IQ Transceiver TRAˍ120ˍ002
Preliminary Data Sheet
Revision 0.8 2018-11-05

Version Control
VersionChanged section

0.5

template

0.60.7

specification
6.5 VCO Tuning Inputs
6.2 Power Cycling
7 Meas. Results

0.8

5.4 Qualification Test

Description of change
Sections version control and document
release added
Spec data revised
Information parameter and application
hint added
Application hint added
Antenna Radiation Pattern (Fig. 17, 18)
added
Section with reflow profile added-2-

Reason for change
controlled document
routinely revision
updateupdateupdateupdate

120-GHz IQ Transceiver TRAˍ120ˍ002
Preliminary Data Sheet
Revision 0.8 2018-11-05

Table of Contents
1Features ................................................................................................................................ 4

1.1
1.2

Overview .................................................................................................................................................. 4
Applications.............................................................................................................................................. 423

Block Diagram ....................................................................................................................... 5
Pin Configuration .................................................................................................................. 6

3.1
3.2

Pin Assignment ......................................................................................................................................... 6
Pin Description ......................................................................................................................................... 6

4Specification.......................................................................................................................... 7

4.1
4.2
4.3
4.4

Absolute Maximum Ratings ..................................................................................................................... 7
Operating Range ...................................................................................................................................... 7
Thermal Resistance .................................................................................................................................. 7
Electrical Characteristics .......................................................................................................................... 8

5Packaging .............................................................................................................................. 9

5.1
5.2
5.3
5.4

Outline Dimensions .................................................................................................................................. 9
Package Code ........................................................................................................................................... 9
Antenna Position ...................................................................................................................................... 9
Qualification Test ................................................................................................................................... 10

6Application.......................................................................................................................... 10

6.1
6.2
6.3
6.4
6.5
6.6Application Circuit .................................................................................................................................. 10Power Cycling ......................................................................................................................................... 11
Evaluation Boards .................................................................................................................................. 11
Input / Output Stages............................................................................................................................. 11
VCO Tuning Inputs.................................................................................................................................. 12
Antenna Performance ............................................................................................................................ 127

Measurement Results.......................................................................................................... 13-3-120-GHz IQ Transceiver TRAˍ120ˍ002
Preliminary Data Sheet
Revision 0.8 2018-11-05

1Features

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1.1

Radar front end (RFE) with on-chip antennas for 122-GHz ISM bandSingle supply voltage of 3.3 V
Fully ESD protected device
Low power consumption of 380 mW
in continuous operating mode
Integrated low phase noise push-push VCO
Receiver with homodyne quadrature mixer
RX and TX dipole on-chip antennas
Large bandwidth of up to 7 GHz
QFN32 leadless plastic package 5 × 5 mm²
Pb-free, RoHS compliant package
IC is available as bare die as wellOverview

The radar front end TRAˍ120ˍ002 is an integrated transceiver circuit for the 122-GHz ISM band with antennas onchip. It includes a low-noise amplifier (LNA), quadrature mixers, a poly-phase filter, a voltage controlled oscillator,
divide-by-32 outputs, and transmit and receive antennas (see Figure 1).
The RF signal from the oscillator is directed to the RX path via buffer circuits. The RX signal is amplified by the LNA
and converted to baseband by two mixers with quadrature local oscillator (LO). The 120-GHz LO has four analog
tuning inputs with different tuning ranges and tuning slopes. The tuning inputs can be combined to obtain a wide
frequency tuning range. The analog tuning inputs together with the integrated frequency divider and external
fractional-N PLL can be used for frequency modulated continuous wave (FMCW) radar operation. With fixedoscillator frequency it can be used in continuous wave (CW) mode. Other modulation schemes are possible as wellby utilizing analog tuning inputs.
The IC is fabricated in SG13S SiGe BiCMOS technology of IHP GmbH.

1.2Applications

The main field of application for the 120-GHz transceiver radar frontend (RFE) is in short range radar systems witha range up to about 10 meters. By using dielectric lenses, the range can be increased considerably. The RFE can beused in FMCW mode as well as in CW mode. Although the chip is intended for use in the ISM band 122 GHz 123 GHz, it is also possible to extend the bandwidth to the full tuning range of 7 GHz.

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120-GHz IQ Transceiver TRAˍ120ˍ002
Preliminary Data Sheet
Revision 0.8 2018-11-05

2

Figure 1

Block Diagram

Block Diagram-5-120-GHz IQ Transceiver TRAˍ120ˍ002
Preliminary Data Sheet
Revision 0.8 2018-11-05

3

Pin Configuration

3.1

Pin Assignment

Figure 2

Pin Assignment (QFN32, top view)

3.2

Pin Description

Table 1

Pin Description

Pin
No.
2
3
4
5
6
718
19
20
21
22
23
24
9 - 16,25 - 32
1,8, 17(33)Description
Name
VCC
IFˍQnIFˍQpIFˍInIFˍIp
RXen
Vt0
Vt1
Vt2
Vt3
divn
divp
DIVen

Supply voltage (3.3 V)
Quadrature IF I output, negative terminal (DC coupled)
Quadrature IF I output, positive terminal (DC coupled)
Quadrature IF Q output, negative terminal (DC coupled)
Quadrature IF Q output, positive terminal (DC coupled)
Receiver enable input, low-active CMOS input with internal 70-kΩ pull-down resistor
VCO tuning input 0 (0 – VCC)
VCO tuning input 1 (0 – VCC)
VCO tuning input 2 (0 – VCC)
VCO tuning input 3 (0 – VCC)
Divider output, neg. terminal. 50 Ω, DC coupled, external decoupling cap. required
Divider output, pos. terminal. 50 Ω, DC coupled, external decoupling cap. required
Divider enable input, low-active CMOS input with internal 100-kΩ pull-down resistorNC

Not connected. These pins may be connected to ground. Performance will not be affected.

GND
GND

Ground pins, also connected to the exposed die attach pad.
Exposed die attach pad of the QFN package, must be soldered to ground.

-6-120-GHz IQ Transceiver TRAˍ120ˍ002Preliminary Data Sheet
Revision 0.8 2018-11-05

4Specification

4.1

Absolute Maximum Ratings

Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to thepart. Actual performance of the IC is only guaranteed within the operational specifications, not at absolutemaximum ratings.
Table 2Absolute Maximum Ratings

Parameter
Supply voltage
DC voltage at tuning inputs
DC voltage at enable inputs
Junction temperature
Storage temperature range
ESD robustness
1)

Symbol
VCC
VVt
VENTJ
TSTG
VESD

Min-0.3-0.3-50-65

Max
3.6
VCC + 0.3
VCC + 0.3150150
1.2

UnitVVV°C°C
kVCondition / Remarkto GND
Inputs Vt0, Vt1, Vt2, Vt3
Inputs DIVen, RXen

Human body model, HBM 1)

CLASS 1C according to ESDA/JEDEC Joint Standard for Electrostatic Discharge Sensitivity Testing, Human Body Model Component
Level, ANSI/ESDA/JEDEC JS-001-2011

4.2

Operating Range

Table 3Operating Range

Parameter
Ambient temperature
Supply voltage
DC voltage at tuning inputs
DC voltage at enable inputs

SymbolTAVCCVVtVENMin-40
3.13
00Max
85
3.47
VCC
VCCUnit°C
VVV

Condition / Remark(3.3 V ± 5%)
Inputs Vt0 – Vt3
Inputs DIVen, RXen

Note: Do not drive input signals without power supplied to the device.

4.3

Thermal Resistance

Table 4

Thermal ResistanceParameter
Thermal resistance, junction-toambient

SymbolMin

TypMax

Unit

Condition / Remark

Rthja--50

K/W

JEDEC standard JESD-51-5-7-

120-GHz IQ Transceiver TRAˍ120ˍ002
Preliminary Data Sheet
Revision 0.8 2018-11-05

4.4

Electrical Characteristics

TA = -40 °C to +85 °C unless otherwise noted. Typical values measured at TA = 25 °C and VCC = 3.3 V.
Table 5

Electrical Characteristics

Parameter
DC Parameters
Supply current consumption
DIVen input voltage,
low level
DIVen input voltage,high level
RXen input voltage,
low level
RXen input voltage,high level
VCO tuning voltage
RF Parameters
VCO start frequency
VCO stop frequency
VCO tuning full bandwidth
Number adjustable of frequency
bands
Pushing VCO
Phase noise
Transmitter output power
Divider ratio of TX signal
Divider output power
Divider output frequency
Receiver gain
IF frequency range
IF output impedance
IQ amplitude imbalance
IQ phase imbalance
Noise figure (DSB)
Input compression point
Note 1Symbol

Min

ICC

TypMax

UnitCondition / Remark

1281550.3 ×
VCCmARX and divider enabled

V

Input DIVen

VDIVenˍL

0VDIVenˍH

0.7 ×
VCC

VCC

V

Input DIVen

VRXenˍL

00.5 ×
VCC

V

Input RXen

VRXenˍH

VCC -0.4

VCC

V

Input RXen

VVT0VCCV

Inputs Vt0 – Vt3

fTX
fTX
ΔfTX

117.8
124.3
5.5

120.8
127.3
7.5

GHz
GHz
GHz

Vt0 = Vt1 = Vt2 = Vt3 = 0
Vt0 = Vt1 = Vt2 = Vt3 = 3.3 V
Vt0 – Vt3 interconnected
Vt1 – Vt3 used for bandswitching-88
1MHz/VdBc/HzdBm

ΔfTX /ΔVCCPN
PTX
NDIV
PDIV
fDIV

-7

119.3
125.8
6.5
827-90
-3
64

-10
1.85
8fIF
ZOUT

0500
tbd
-10

1dB ICP

-7
1.98
10200

10
8.7
-20dBmGHzdBMHz
Ω
dBdeg
dBdBm

at 1 MHz offset
Measured without antennas
Note 1
Measured without antennas
Differential outputs

Simulated, at fIF = 1 MHz)
Measured without antennas

Measured single-ended. Divider outputs are loaded with 50 Ω, external decoupling capacitors are required. No 50-Ω match isrequired in application.

-8-120-GHz IQ Transceiver TRAˍ120ˍ002
Preliminary Data Sheet
Revision 0.8 2018-11-05

5Packaging

5.1

Outline Dimensions

Dimensions in mm
Figure 3

5.2

Outline Dimensions of QFN32 Package with Exposed Pad

Package Code

Top-Side Markings

5.3

Figure 4

TRA002YYWW

Antenna Position

Antenna Position (top view)-9-120-GHz IQ Transceiver TRAˍ120ˍ002
Preliminary Data Sheet
Revision 0.8 2018-11-05

5.4
Table 6

Qualification Test
Reliability and Environmental Test

Qualification Test
MSL3

JEDEC Standard
J-STD-020ECondition
Reflow simulation 3 times at 260°C

Pass / Failpass

Tp ≤ Tc = 260 °C
tp ≤ 30 s
TS.min = 150 °C
TS.max = 200 °C
tS = 60 s – 120 s
TL = 217 °C
tL = 60 s – 150 s
t25°C-to-Tp ≤ 480 s

Figure 5

Reflow Profile for Pb-Free Assembly according to JEDEC Standard J-STD-020E

6Application

6.1

Application Circuit

Figure 6

Application Circuit- 10 -120-GHz IQ Transceiver TRAˍ120ˍ002
Preliminary Data Sheet
Revision 0.8 2018-11-05

6.2

Power CyclingIt is possible to reduce power consumption by power cycling the radar front end. Rapid power cycling withvoltage rise times between 10 and 100 µs is possible. At power-up, it must be ensured that no input signal isdriven high before the supply voltage is stable. At power-down, all input signals must be pulled low before thesupply voltage is switched off.

6.3

Evaluation Boards

For a quick and easy start into radar development Silicon Radar offers SiRad Easy®. It is an evaluation board
system for many of our integrated IQ transceivers with antennas in package or on PCB. It comes with a reference
hardware and provides a complete design environment which can be configured via a browser-based graphicaluser interface. Its rich functionality and the open communication protocol make it a versatile tool – also forenhanced development projects.
It features: Distance measurement
 Velocity measurement Frequency modulated continuous wave mode (FMCW) Continuous wave mode (CW)
For more information about the features of SiRad Easy® see:https://www.siliconradar.com

6.4

Input / Output Stages

The following figures show the simplified circuits of the input and output stages. It is important that the voltage
applied to the input pins never exceeds VCC by more than 0.3 V. Otherwise, the supply current may be conducted
through the upper ESD protection diode connected at the pin.

Figure 7

Equivalent I/O Circuits- 11 -

120-GHz IQ Transceiver TRAˍ120ˍ002
Preliminary Data Sheet
Revision 0.8 2018-11-05

6.5

VCO Tuning Inputs

The VCO tuning inputs Vt0 – Vt3 are of analog nature, but can be switched digitally as well. The tuning inputs
differ in their tuning ranges (tuning bandwidth) and slopes, whereby Vt3 has the widest tuning range, and Vt0 thenarrowest.
Table 7Input
Vt0
Vt1
Vt2
Vt3

Typical VCO Tuning Bandwidth and Slope

VCO tuning bandwidth (MHz)ΔfTXˍVt0
720
ΔfTXˍVt1
750
ΔfTXˍVt2
1580
ΔfTXˍVt3
3450

Middle band slope (MHz/V)
ΔfTX /ΔVVt0
290
ΔfTX /ΔVVt1
300
ΔfTX /ΔVVt2
630
ΔfTX /ΔVVt3
1380

The VCO tuning range of a specific tuning input can be increased by connecting it to another tuning input. All
combinations of the four tuning inputs are allowed. Unused tuning inputs must be set to a fixed potential (between0 and VCC). The interconnection of all inputs Vt0 – Vt3 leads to the maximum tuning bandwidth. For example, if Vt0
is used as tuning input, the variation of the potential at Vt1, Vt2, Vt3 in all logical combinations of 0 and VCC, results
in offsetting the tuning curve (see Figure 10).

6.6

Antenna Performance

The simulated gain of TX and RX on-chip antennas shows 10 dBi at an angle of 30°, see Figure 17 and 18.

- 12 -120-GHz IQ Transceiver TRAˍ120ˍ002
Preliminary Data Sheet
Revision 0.8 2018-11-05

7

Measurement Results
12116

8Voltage Gain (dB)

Power Consumption (mA)

10115

114

113

642112-20

Figure 8-100

1020 30 40 50
Temperature (°C)

60

70

80

090-40Figure 9

Power Consumption vs. Temperature-25-20-15-10

3.0

3.5

Conversion Gain of the Receiver(without antenna)

127
126

126
111

125

125

110

124

101

123

100011122010121

001120000124

Frequency (GHz)

Output Frequency (GHz)-30

Input Power (dBm)

127

123
122
121
120
1191191181180

Figure 10

0.5

11.5
2
Tuning Voltage (V)

2.5

30.0

3.5

VCO Tuning Curves. Vt0 is varied, while Vt1, Vt2 and Vt3
are driven high or low. For example, 011 means Vt3 = 0,Vt2 = 3.3 V and Vt1 = 3.3 V.

Figure 11

124.2

127

124.0

126

123.8

125

123.6

124

Output Frequency (GHz)

Output Frequency (GHz)

-35

123.4
123.2
123.0
Vcc=3.6V
Vcc=3.3V
Vcc=3V

122.8
122.6

0.5

1.0

1.5
2.0
Tuning Voltage (V)Full Bandwidth VCO Tuning.
Vt0, Vt1, Vt2, Vt3 are interconnected.
(Vt0 = Vt1 = Vt2 = Vt3)

123
122
121
Vcc=3.6V
Vcc=3.3V
Vcc=3V120
119

122.4

2.5

118
0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0.0

Tuning Voltage (V)Figure 12

0.5

1.0

1.5

2.0

2.5

3.0

Tuning Voltage (V)VCO Pushing - VCC ± 300 mV
Vt0 = Sweep , Vt1 = Vt2 = 0, Vt3 = 3.3 V

Figure 13- 13 -VCO Pushing - Full Bandwidth Operation.
All tuning voltages, Vt0 = Vt1 = Vt2 = Vt3

3.5

120-GHz IQ Transceiver TRAˍ120ˍ002Preliminary Data Sheet
Revision 0.8 2018-11-05

127

TX Output Frequency (GHz)

126
125
124
123
122
fout.min121

fout.max

120119118
117-20-1001020304050

607080Temperature (°C)

Figure 14

Phase Noise of the Integrated Oscillator
at Divider Output (1.89 GHz)

Figure 15

Output Frequency vs. Temperature2

Normalized Output Power (dB)

10-1-2-3-4-5-6-7-20

Figure 16-1001020 30 40 50
Temperature (°C)

60

7080

90

Output Power Swing vs. Temperature(Normalized to 20°C)

100Directivity (dBi)-10-20-30-40-50

θ = 90°θ = 0°-60-70-90-60-3003060

θ = 90°θ = 0°

90

Angle (degree)

Figure 17

Antenna Radiation Pattern (simulated)

Figure 18- 14 -Antenna Radiation Pattern (simulated)90

120-GHz IQ Transceiver TRAˍ120ˍ002
Preliminary Data Sheet
Revision 0.8 2018-11-05

Disclaimer
Silicon Radar GmbH 2018. The information contained herein is subject to change at any time without notice.
Silicon Radar GmbH assumes no responsibility or liability for any loss, damage or defect of a product which is caused in whole or in part by(i)use of any circuitry other than circuitry embodied in a Silicon Radar GmbH product,(ii)misuse or abuse including static discharge, neglect, or accident,(iii)
unauthorized modifications or repairs which have been soldered or altered during assembly and are not capable of being tested by Silicon
Radar GmbH under its normal test conditions, or(iv)improper installation, storage, handling, warehousing, or transportation, or(v)being subjected to unusual physical, thermal, or electrical stress.
Disclaimer: Silicon Radar GmbH makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express
or implied warranties, either in fact or by operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use ora particular purpose, and any implied warranty arising from course of dealing or usage of trade, as well as any common-law duties relating to accuracy orlack of negligence, with respect to this material, any Silicon Radar product and any product documentation. Products sold by Silicon Radar are not suitable orintended to be used in a life support applications or components, to operate nuclear facilities, or in other mission critical applications where human life maybe involved or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below.
CRITICAL USE EXCLUSION POLICY: BUYER AGREES NOT TO USE SILICON RADAR GMBH'S PRODUCTS FOR ANY APPLICATIONS OR IN ANY COMPONENTS USEDIN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMANLIFE OR PROPERTY MAY BE AT STAKE.
Silicon Radar GmbH owns all rights, titles and interests to the intellectual property related to Silicon Radar GmbH's products, including any software,firmware, copyright, patent, or trademark. The sale of Silicon Radar GmbH’s products does not convey or imply any license under patent or other rights.
Silicon Radar GmbH retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the sale of products
or services by Silicon Radar GmbH. Unless otherwise agreed to in writing by Silicon Radar GmbH, any reproduction, modification, translation, compilation, orrepresentation of this material shall be strictly prohibited.

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