QLF1312-P10Preliminary

1310 nm FP LASER DIODE

C00055-02, Nov. 2011

1. DESCRIPTIONQLF1312-P10 is a 1310 nm quantum dot FP laser diode chip for use in telecom and datacom applications up to2.5Gbps speed. Since quantum dot technologies are equipped with active layers of the device, it realizes excellent
temperature characteristics and low power consumptions.
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FEATURES
1300nm FP-LD Chip
Wide temperature operation: -10 to 85 C

APPLICATION Optical communication
ABSOLUTE MAXIMUM RATINGPARAMETERLight Output PowerLD Forward CurrentLD Reverse Voltage
Operation Temperature (Tc)
Storage Temperature *1)
Soldering Temperature (<1.5s)

SYMBOLPoIFVRLD
Tc
Tstg
Tsld*1)no condensation

1 of 4(Tc = 25°C, unless otherwise specified)
RATINGUNIT
15mW
80mA
2V-10 to +85
C-40 to +85
C390
C

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5. OPTICAL AND ELECTRICAL CHARACTERISTICS
All chips are screend at 85 C based on the following items.
PARAMETERSYMBOLTESTCONDITION

Threshold current

IthCW

Iop

CW, Po=10 mW

VopCW, Po=10 mWCW

Operation current

Operation voltage

Slope efficiency
Saturation power

Psat

CW

Center wavelength

cCW, Po=10 mW

CW, Po=10 mW
RMS(-20dB)

Spectral width
Beam divergence angle
PararellBeam divergence angle
Perpendicular

//



CW, Po=10 mW,
FWHM

2 of 4Tc

MIN

TYP

MAX

UNIT

25°C

-

8-

85°C

-

121525°C

-

35-

85°C

-

405025°C

-

1.35

-

85°C

-

1.25

1.625°C

-

0.40

-

85°C

0.25

0.35

-

85°C

10--25°C

-

1305

-85°C

1325

1335

1345

25°C

-

2.7

-

85°C

-

2.24.025°C-18-deg.

25°C-44-deg.

mAmA

V

W/AmW
nm

nm

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6.

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OUTLINE DRAWING
Anode sideLength
WidthHeight375
230
120

All dimensions in micrometers

7. SHIPPING FORM
LD chips are shipped on an antistatic sheet of 6 inch- ring.
Product name, lot number and quantity are printed on labels.

8. NOTICE OF ASSEMBLING CHIPSLD chips are easily damaged by external stress, such as physical contact, excess temperature and ESD.
QD Laser shall not take any responsibility for reliability and characteristics after assembly.
Please pay attention to handling chips, and use within range of maximum ratings.
(1) Chip handling
When handling LD chips, please do not use tweezers and use a capillary with a head shape to prevent the damage of thechip surface and the mesa structure.
(2) Die and wire bonding
Appropriate conditions should be used for die and wire bonding.
Die should be mounted into an anode-side up configraion.
Wire bonding should not be on an mesa structure.
(3) Burn-in
Burn-in can not be done on a chip level. After assembly, burn-in process is recommended to be done.
Suggested condition: Tchip=100deg.C, Iop=90mA, 12hrs,
Criteria: Tchip=25deg.CIth<+/-1.0mA, Iop<+/-10%, <+/-10%

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QLF1312-P10

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9. NOTICE Safety Information
This product is classified as Class 1M laser product, and complies with 21 CFR Part 1040.10.
Please do not take a look laser lighting in operations since laser devices may cause troubles to human eyes.
Please do not eat, burn, break and make chemical process of the products since they contain GaAs material.
 Handling products
Semiconductor lasers are easily damaged by external stress such as excess temperature and ESD.
Please pay attention to handling products, and use within range of maximum ratings.
QDL takes no responsibility for any failure or unusual operation resulting from improper handling, or unusual physicalor electrical stress.
 RoHSThis product conforms to RoHS compliance related EU Directive 2002/95/EC.

QD Laser, Inc.
Contact : info@qdlaser.com
http://www.qdlaser.com
Copyright 2011 All Rights Reserved by QD Laser Inc.
Address : Keihin Bidg.1F 1-1 Minamiwataridacho, Kawasaki-ku, Kawasaki, Kanagawa Zip 210-0855 JapanAll company or product names mentioned herein are trademarks or registered trademarks of their respective owners. Information
provided in this data sheet is accurate at time of publication and is subject to change without advance notice.

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