Camera Technology
Focused on Scientific Imaging
and Challenging Inspection

www.tucsen.com

FL 9BW (LT version)
FL 9BW LT is a cooled CMOS camera designed for long exposure
imaging. It not only incorporates high sensitivity and low noise
advantages from latest sensor technologies, but also leverages
Tucsen’s many years experiences on cooling chamber design andadvanced image processing. FL 9BW LT is able to capture clean
and even images for up to 60 minutes exposure time.

Key Features

Benefits

Scientific Grade CMOS

92 % peak QE, 0.9 e- readout noise and no glow.

< 0.003 e-/p/s Dark Current

Equivalent to the cooled CCD for long exposure imaging.

16000 : 1 Dynamic Range

More than 4 times that of the CCD, greatly expanding the signal
detection range.

Pixel Correction Technology

High background quality ensures more accurate quantitative analysis. [1]Flexible Binning Mode

Improving the sensitivity and dynamic range capability.

High Reliability Cooling Chamber Cooled to 0 °C @ 22 °C, no condensation or other problems.
Compact Design

Conducive to instrument system integration.

Typical Applications

1Chemiluminescence
Bioluminescence
PCRFluorescence imaging

0.9[1] The FL 9BW LT has excellent backgrounduniformity, as it has basically eliminated the badfactors such as ampliﬁer grow and bad pixels.
(a)

Absolute Response

0.8

Noted Examples(a)

Quantum Efficiency

0.7
0.6
0.5
0.4
0.3
0.2
0. 10400 450 500 550 600 650 700 750 800 850 900 950 1000
Wavelength (nm)(b)

Dimensions (Unit: mm)
Analog optical path
C-Mount
Glass window
Imaging area

StatusUSB3.0DC 12V

6.98

118°(b)∅ 41
10Trigger

17.5 +2-1 (Adjustable)
98.5

681-32UNS-2B

with 600s exposure. Figure (b) is the grayscale intensity
curve corresponding to the yellow region, showing
excellent background uniformity.

Mounting hole
4x1/4-20UNC ↧6

Mounting hole
4xM4 ↧ 3.4

76
68

Figure (a) is the background image taken by FL 9BW LT

2-32UNS-2A
Imaging area

76

12.5

Long Exposure Cooled CMOS Camera

www.tucsen.com

Technical Specifications
Model

FL 9BW LTSensor TypeBSI CMOS

Sensor Model

SONY IMX533CLK-D

Color/MonoMonoArray Diagonal

15.96 mm (1”)

Effective area

11.28 mm × 11.28 mm

Pixel Size3.76 µm × 3.76 µm

Resolution

3000 × 3000, 9 MP

Peak QE

92% @ 530 nm

Dark Current< 0.003 e-/p/s

Gain Mode

Gain 0 - High-Capacity

Gain 1 - Balanced

Gain 2 - Sensitive

Full well capacity

Gain0: 47 ke- @ bin1;> 180 ke- with binning

Gain1: 16 ke- @ bin1;> 64 ke- with binning

Gain2: 3 ke- @ bin1;> 12 ke- with binning

Readout Modes

Standard, Low-Noise

Readout noise (Standard)

3.2 e- @ Gain0

1.2 e- @ Gain1

1.0 e- @ Gain2

Readout noise (Low-Noise)

2.5 e- @ Gain0

1.0 e- @ Gain1

0.9 e- @ Gain2

Frame Rate

18 fps @ Standard Mode, 12 fps @ Low Noise Mode

Shutter Mode

Rolling

Exposure Time12.2 µs ~ 60 min

Image Processing

DPC

ROI

Supported

Binning

2x2, 3x3, 4x4, 6x6, 8x8

Cooling Method

Air

Cooling Temperature

Cooled to 0 °C @ Ambient temperature (22 °C)

Trigger Mode

Hardware, software

Output Trigger Signals

Exposure start, Global, Readout end, High level, Low level

Trigger Connector

HoriseSDKC, C++, C#

Data Interface

USB 3.0

Optical Interface

C-Mount, Customizable

Bit Depth

14 bit @ bin1, Extended to 16 bit with FPGA binningPower12 V / 6 A

Power Consumption≤ 40 W

Dimensions

76 mm x 76 mm x 98.5 mm

Camera Weight

835 g

Operating System

Windows / Linux

Operating Environment

Working: Temperature 0~40 °C, Humidity 10~85 %Storage: Temperature -10~60 °C, Humidity 0~85 %