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6A871

Silicon PNP transistor epitaxial type
6A871
[ Applications ]High current amplifier
Wireless telecommunication devices[ Feature ]Collector current IC= -4A
Very low collector saturation voltage VCE(sat)= -360mV (Max.) at IC= -3A, IB= -0.3A
Exellent gain characteristics specified up to -10 ampers[ Absolute maximum ratings (Ta=25C) ]Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)Collector current (Pulse)
Junction temperature
Storage temperature

Symbol Maximum ratings
VCBO-180
VCEO
-140
VEBO
-7
IC-4
IC-10Tj150
Tstg-55 to 150

UnitVVVAACC[ Electrical characteristics (Ta=25C) ]Characteristic
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain 1
DC current gain 2
DC current gain 3
DC current gain 4

Symbol
BVCBO
BVCER
BVCEO
BVEBO
ICBO
ICER
IEBO
hFE 1
hFE 2
hFE 3
hFE 4

Collector-emitter saturation voltage 1Collector-emitter saturation voltage 2
Collector-emitter saturation voltage 3
Collector-emitter saturation voltage 4

VCE(sat) 1

Base-emitter saturation voltage
Base-emitter on voltage
Transition frequency
Collector output capacitanceTurn on time
Turn off time

VBE(sat)VBE(on)
fT
Cob
ton
toff

VCE(sat) 2
VCE(sat) 3
VCE(sat) 4

Min.
-180-180-140-7
100
100
35-

Typ.
-200
-200-160-8
225
200
5-40-55-85-275
-0.94
-0.83
1203342636

Max.
-20-20-10300-60-80-120-360
-1.04
-0.93
-UnitVVVVnAnAnAmVmVmVmVV
VMHzpF
nsnsConditions
IC= -100uA
IC= -1uA, RB≦1kohm
IC= -10mA
IE= -100uA
VCB= -150V
VCB= -150V, RB≦1kohm
VEB= -6V
VCE= -5V, IC= -10mA
VCE= -5V, IC= -1A
VCE= -5V, IC= -3A
VCE= -5V, IC= -10A
IC= -0.1A, IB= -5mA
IC= -0.5A, IB= -50mA
IC= -1A, IB= -0.1A
IC= -3A, IB= -0.3A
IC= -3A, IB= -0.3A
VCE= -5V, IC= -3A
VCE= -10V, IE= 0.1A
VCB= -10V, f = 1MHz, IE= 0A

VCC= -50V, IC= -1A-IB1= IB2= 0.1A

Notice 1) These are measured data of transistors assembled by PHENITEC SEMICONDUCTOR Corp. and are for reference only.
Notice 2) The contents described herein are subject to change without notice.

PHENITEC SEMICONDUCTOR Corp.

No. 6A871-20190826- 1/2 -6A871

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Fig.1 IC - VBE(on)at VCE= -5V, Ta= 25C

Fig.2 hFE - IC
at VCE= -5V, Ta= 25C

10Fig.3 VCE(sat) - IC
at IC/IB= 10, Ta= 25C

0.10.01100

1010.001

0.001

0.010.1

110010100.001

0.01

0.1

1100.5 0.7 0.9 1.1 1.3 1.5
Base-emitter on voltage: -VBE(on) (V)Collector current : -IC (A)Collector current : -IC (A)Fig.4 VCE(sat)- IC
at IC/IB= 20, Ta= 25C

Fig.5 VBE(sat) - IC
at IC/IB= 10, Ta= 25C

Fig.6 fT - IE
at VCE= -10V, Ta= 25C

10100

100.001

0.01
0.1
110
Collector current : -IC (A)10010.1
0.001

0.01

0.1

110

Collector current : -IC (A)100.01

0.1

1Emitter current : IE (A)Fig.8 Cib - VEB
at f= 1MHz, Ta= 25C

1000

Collector output
capacitance : Cob (pF)Collector input
capacitance : Cib (pF)

Fig.7 Cob - VCB
at f= 1MHz, Ta= 25C

1000
Transition frequency: fT (MHz)

Base-emitter saturation
voltage : -VBE(sat) (V)Collector-emitter saturation
voltage : -VCE(sat) (mV)

1000

1000

1000
Collector-emitter saturation
voltage : -VCE(sat) (mV)1

DC current gain : hFE

Collector current : -IC (A)1000

100100100.1110100
Collector-base voltage : -VCB (V)

0.1

1
10
Emitter-base voltage : -VEB (V)0190826
PHENITEC SEMICONDUCTOR Corp.

No. 6A871-20190826- 2/2 -