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A5886

Silicon PNP transistor epitaxial type
A5886

[ Applications ]Supply line switchimg circuits, Battery charger
DC-DC converter, MOSFET driver[ Feature ]Very low collector saturation voltage VCE(sat)= -375mV (Max.) at IC= -5A, IB= -0.5A[ Absolute maximum ratings (Ta=25C) ]Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)Collector current (Pulse)
Base current (Pulse)
Junction temperature
Storage temperature

Symbol Maximum ratings
VCBO-40
VCEO-40
VEBO-6IC-5IC-10
IB-2
Tj150
Tstg
-55 to 150

UnitVVVAAACC[ Electrical characteristics (Ta=25C) ]Characteristic
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain 1
DC current gain 2
DC current gain 3
DC current gain 4
Collector-emitter saturation voltage 1
Collector-emitter saturation voltage 2
Collector-emitter saturation voltage 3
Collector-emitter saturation voltage 4
Base-emitter saturation voltage
Base-emitter on voltage
Transition frequency
Collector output capacitance

Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE 1
hFE 2
hFE 3
hFE 4
VCE(sat) 1
VCE(sat) 2
VCE(sat) 3
VCE(sat) 4

VBE(sat)VBE(on)
fT
Cob

Min.
-40
-40
-6
250
200
150
50
60
-Typ.
350
300
250
150
-80
-120
-110
-250
-0.8
120
90

Max.
-100
-100-120-170-160-375
-1.3
-1.25
105

Unit
V
V
V
nA
nA
mV
mV
mVmV
V
V
MHz
pF

Conditions
IC= -100uA, IE= 0A
IC= -10mA, IB= 0A
IE= -100uA, IC= 0A
VCB= -30V, IE= 0A
VEB= -5V, IC= 0A
VCE= -2V, IC= -0.5A
VCE= -2V, IC= -1A
VCE= -2V, IC= -2A
VCE= -2V, IC= -5A
IC= -0.5A, IB= -5mA
IC= -1A, IB= -10mA
IC= -2A, IB= -0.2A
IC= -5A, IB= -0.5A
IC= -5A, IB= -0.5A
VCE= -2V, IC= -2A
VCE= -10V, IE= 0.1A
VCB= -10V, f = 1MHz, IE= 0A

Notice 1) These are measured data of transistors assembled by PHENITEC SEMICONDUCTOR Corp. and are for reference only.
Notice 2) The contents described herein are subject to change without notice.

PHENITEC SEMICONDUCTOR Corp.

No. A5886-20081014- 1/2 -A5886

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Fig.1 IC - VBE(on)at VCE= -2V, Ta= 25C

Fig.3 VCE(sat) - IC
at IC/IB= 10, Ta= 25C

Fig.2 hFE - IC
at VCE= -2V, Ta= 25C

101000

0.1

0.01

0.001
0.4

0.6

0.8

1.0100100.001

Base-emitter on voltage: -VBE(on) (V)
Fig.4 VCE(sat) - IC
at IC/IB= 100, Ta= 25C

0.01

0.1

1100

0.01
0.1
110Collector current : -IC (A)Fig.5 VBE(sat) - IC
at IC/IB= 10, Ta= 25C

Fig.6 fT - IE
at VCE= -10V, Ta= 25C
10000.01

0.1

110.1
0.001

100.01

0.1

110Collector current : -IC (A)Collector current : -IC (A)Fig.7 Cob - VCB
at f= 1MHz, Ta= 25C

Fig.8 Cib - VEB
at f= 1MHz, Ta= 25C

10000

100

1010.001

0.01

0.1

1Emitter current : IE (A)Collector input
capacitance : Cib (pF)Collector output
capacitance : Cob (pF)

1000

10

Collector current : -IC (A)Transition frequency: fT (MHz)

1000

100

10.0011010
Base-emitter saturation
voltage : -VBE(sat) (V)Collector-emitter saturation
voltage : -VCE(sat) (mV)

10000

100.001

Collector-emitter saturation
voltage : -VCE(sat) (mV)

1DC current gain : hFE

Collector current : -IC (A)

1000

100

1000

101000.1
110100
Collector-base voltage : -VCB (V)

0.1
1
10
Emitter-base voltage : -VEB (V)0081014PHENITEC SEMICONDUCTOR Corp.

No. A5886-20081014- 2/2 -