A5862

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Silicon PNP transistor epitaxial type
A5862

[ Applications ]Supply line switching circuits
Battery management
DC-DC convertor
Strobe flash
Motor and lamp driver[ Feature ]High DC gain hFE= 300-600 at VCE= -2V, IC= -0.1A
Low collector saturation voltage VCE(sat)< -225mV at IC= -1A, IB= -50mA[ Absolute maximum ratings (Ta=25C) ]Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)Collector current (Pulse)
Base current (Pulse)
Junction temperature
Storage temperatureSymbol Maximum ratings
VCBO
-40
VCEO
-40
VEBO
-5
IC-2
ICP-3
IBP-0.3
Tj150
Tstg-55 to 150

UnitVVVAA
ACC[ Electrical characteristics (Ta=25C) ]Characteristic
SymbolCollector-emitter breakdown voltage BVCEO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
DC current gain 1
hFE 1
DC current gain 2
hFE 2
DC current gain 3
hFE 3
DC current gain 4
hFE 4
Collector-emitter saturation voltage 1 VCE(sat) 1
Collector-emitter saturation voltage 2 VCE(sat) 2
Collector-emitter saturation voltage 3 VCE(sat) 3
Collector-emitter saturation voltage 4 VCE(sat) 4
Collector-emitter saturation voltage 5 VCE(sat) 5
Base-emitter saturation voltage
VBE(sat)Base-emitter on voltage
VBE(on)Transition frequency
fTCollector output capacitance
CobMin.
-40
300
260
210
100
100-Typ.
450-55-70-140-140-240200
16Max.
-100-100
600-100-110-225-225
-350
-1.1
-0.75
28Unit
VnA
nA
mV
mV
mV
mVmVVVMHz
pF

Conditions
IC= -10mA, IB= 0A
VCB= -30V, IE= 0A
VEB= -4V, IC= 0A
VCE= -2V, IC= -0.1A
VCE= -2V, IC= -0.5A
VCE= -2V, IC= -1A
VCE= -2V, IC= -2A
IC= -0.1A, IB= -1mA
IC= -0.5A, IB= -50mA
IC= -0.75A, IB= -15mA
IC= -1A, IB= -50mA
IC= -2A, IB= -0.2A
IC= -2A, IB= -0.2A
VCE= -2V, IC= -0.1A
VCE= -10V, IE= 0.1A
VCB= -10V, f = 1MHz, IE= 0A

Notice 1) These are measured data of transistors assembled by PHENITEC SEMICONDUCTOR Corp. and are for reference only.
Notice 2) The contents described herein are subject to change without notice.

PHENITEC SEMICONDUCTOR Corp.

No. A5862-20131209- 1/2 -131209

A5862

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Fig.1 IC - VBE(on)at VCE= -2V,Ta= 25C

Fig.2 hFE - IC
at VCE= -2V, Ta= 25C

10Fig.3 VCE(sat) - IC
at IC/IB= 10, Ta= 25C
1000

0.1

0.01

0.001
0.5

0.7
0.9
1.1
Base-emitter on voltage: -VBE(on) (V)100

100.001

Fib.4 VCE(sat) - IC
at IC/IB= 20, Ta= 25C

0.01

0.1

10.01

0.1

1

Collector-emitter saturation
voltage : -VCE(sat) (mV)
0.010.1

1Fig.8 fT - IE
at VCE= -10V, Ta= 25C

1100.01

0.1

110Fig.9 Cob - VCB
at f= 1MHz, Ta= 25C

Collector output
capacitance : Cob (pF)

100

Transition frequency: fT (MHz)0.1

100.001

Collector current : -IC (A)100

100.001

100

10Fig.7 VBE(sat) - IC
at IC/IB= 10, Ta= 25C0.01

10

10000

1000

0.10.001

1Fig.6 VCE(sat) - IC
at IC/IB= 100, Ta= 25C

Collector current : -IC (A)10.1

Fig.5 VCE(sat) - IC
at IC/IB= 50, Ta= 25C

Collector current : -IC (A)100.011000

100.0011010.001

Collector current : -IC (A)Collector-emitter saturation
voltage : -VCE(sat) (mV)Collector-emitter saturation
voltage : -VCE(sat) (mV)

100.001

10Collector current : -IC (A)

100

100

100

1010001000

Base-emitter saturation
voltage : -VBE(sat) (V)Collector-emitter saturation
voltage : -VCE(sat) (mV)

1DC current gain : hFE

Collector current : -IC (A)1000

1010.01

0.1

10.1

110

100

Emitter current : IE (A)Collector-base voltage : -VCB (V)

PHENITEC SEMICONDUCTOR Corp.

No. A5862-20131209- 2/2 -Collector current : -IC (A)Fig.10 Cib - VEB
at f= 1MHz, Ta= 25C

Collector input
capacitance : Cib (pF)

1000

100

100.1

110
Emitter-base voltage : -VEB (V)