Sunday, September 1
10:25-16:00 Short Course 1(Room A (407)), Short Course 2 (Room B＋C (408＋409))
16:30-18:00
Special Talk Session (Grand Hall Foyer)
18:00-19:30
Welcome Reception (Grand Hall Foyer)

Monday, September 2
9:00-12:50 Opening and Plenary Sessions (Grand Hall)
Lunch

Room A (407)

Room B (408)Room C (409)

Room D (Medium Hall)

14:30-16:00

14:30-15:45

14:30-15:45

14:30-16:00[A-1] Advanced CMOS: Process Technology[B-1] Ferroelectric Memory Materials[C-1] Advanced Metallization I

Room E (401)[D-1] Ga2O3 Power Devices

Room F (402)

Room G (403)

Room H (Small Hall)

Room J (Main Studio)

Room K (404)

Room M (Special Conference Room)

Room N (Studio 1)

14:30-15:45

14:30-15:30

14:30-15:30

14:15-16:00

14:30-16:00

14:30-15:45[F-1] Thermoelectric materials and devices I[H-1] Device-I[J-1] Qubit I[K-1] Oxide-TFTs I[M-1] Oxide Materials[N-1] Sensor Circuits and Systems

Coffee Break
16:15-17:30

16:15-17:30

16:15-16:45

16:30-17:30

16:15-17:30

16:15-17:30

16:15-17:30

16:15-17:15

16:15-17:30

16:15-17:30[A-2] Innovative devices and Sensing
technology[B-2] In-Memory and Unconventional
Computing I[C-2] MEMS and Advanced Metallization I[D-2] Diamond Devices[E-2] Integrated Light Source and Related
Technology[F-2] Thermoelectric materials and devices II[H-2] Characterization-I[J-2] Qubit II[K-2] Oxide-TFTs II[M-2] Characterization and Device
Applications

Room G (403)

Room H (Small Hall)

Room J (Main Studio)

Room K (404)

Room M (Special Conference Room)

Room N (Studio 1)

18:30-21:00 Banquet (Himeji Castle)

Tuesday, September 3
Room A (407)

Room B (408)Room C (409)

Room D (Medium Hall)

Room E (401)

9:00-10:00

9:00-10:15

9:00-9:45

9:00-10:00

9:00-10:00[D-3] Si-related Devices[E-3] Si Photonics[G-3] Organic / Molecular / Bio-electronics
Late News Session[H-3] Growth[J-3] Novel Quantum Devices

9:00-10:15[B-3] Ferroelectric Devices

Room F (402)Coffee Break
10:45-12:15

10:45-12:15

10:45-12:00

10:45-12:00[A-4] Advanced CMOS: Device Technology[B-4] Ferroelectric Memory Devices[C-4] Advanced integration[D-4] High-speed Devices

10:45-12:00

10:45-11:45

10:30-12:00

10:45-11:45

10:45-12:00

10:45-12:00

10:45-12:15[E-4] UV and Visible Light Technology[F-4] Energy harvesting and solar cells[G-4] Highly Sensitive Devices for Chem/BioDetection[H-4] Device-II[J-4] Spintronics[M-4] Wide Bandgap Materials[N-4] Emerging Memory Devices, and DRAM

Lunch
13:30-14:02

13:30-14:28

13:30-13:46

13:30-14:10

13:30-13:54

13:30-13:46

13:30-13:48

13:30-13:52

13:30-13:52

13:30-14:00

13:30-13:54

13:30-13:38

Short Oral Presentation

Short Oral Presentation

Short Oral Presentation

Short Oral Presentation

Short Oral Presentation

Short Oral Presentation

Short Oral Presentation

Short Oral Presentation

Short Oral Presentation

Short Oral Presentation

Short Oral Presentation

Short Oral Presentation

Room G (403)

Room H (Small Hall)

Room J (Main Studio)

Room K (404)

Room M (Special Conference Room)

Room N (Studio 1)

Coffee Break

15:00-17:00 Poster Session (Exibition Hall A)

Wednesday, September 4
Room A (407)

Room B (408)Room C (409)

Room D (Medium Hall)

Room E (401)

Room F (402)

9:00-10:00

9:00-10:30

9:00-10:00

9:00-10:30

9:00-10:15

9:00-10:15

9:00-10:00

9:00-10:15[A-5] Ferroelectric Devices[B-5] In-Memory and Unconventional
Computing II[C-5] Advanced Metallization II[D-5] SiC MOS Interfaces[G-5] Advanced Devices for Medical Applications[H-5] Characterization-II[J-5] Novel devices for neuromorphic
applications[M-5] Advanced Materials and Thin Films

Coffee Break
10:45-12:15

10:45-12:15

10:45-12:00

11:00-12:15

10:30-12:00

10:45-12:15

10:45-11:45

10:45-11:30

10:30-12:00

10:45-12:00

10:45-11:45[A-6] Modeling, Simulation andCharacterization[B-6] 3D NAND Flash Memory[C-6] MEMS and Advanced Metallization II[D-6] SiC Power Devices[F-6] Solar cells[G-6] Advanced Lab-on-Chip Devices andOrganic/Inorganic Hybrid Electronics[H-6] Device-III[J-6] Novel advanced materials[K-6] Group-IV Thin-film Technologies[M-6] Low Dimensional Materials[N-6] Compute-in-Memory

Lunch
13:30-14:45

13:30-14:45

13:30-14:30

13:30-14:30

13:30-14:45

13:30-14:30

13:30-15:00

13:30-14:45

13:30-14:30[A-7] Advanced CMOS: CFET

[B-7] ReRAM, PCRAM, and FeRAM[D-7] GaN Power Devices[E-7] Metamaterials and Metasurfaces[G-7] Organic Electronics I[H-7] Device-IV[K-7] Ferroelectric Materials and Late News[M-7] Group IV Materials[N-7] Advanced Circuits and Devices

Coffee BreakArea Scope

15:15-16:30

15:15-16:15

15:15-16:15

15:15-16:30[B-8] Ferroelectric FET[D-8] Processes and Characterization[E-8] Sensors and Detectors[G-8] Organic Electronics II

Area 1: Advanced CMOS: Material Science / Process Engineering / Device Technology

Area Scope

Area 7: Organic / Molecular / Bio–electronics

Area 2: Advanced and Emerging Memories / New Applications

Area 8: Low Dimensional Devices and Materials

Area 3: Heterogeneous and 3D Integration / Interconnect / MEMS

Area 9: Novel Functional / Quantum / Spintronic Devices and Materials

Area 4: Power / High–speed Devices and Materials

Area 10: Thin Film Electronics: Oxide / Non–single Crystalline / Novel Process

Area 5: Photonics: Devices / Integration / Related Technology

Area 11: Advanced Materials: Synthesis / Crystal Growth / Characterization

Area 6: Energy Harvesting and Converting Devices and Materials

Area12: Advanced Circuits / Systems Interacting with Innovative Devices and Materials