ICPT 2023 Program Overview ver. 20231009
October 30

October 31
7:00

Registration

November 1
7:00

7:30
|

Tutorial registration

8:00

Opening remark

8:00

9:00
8:10
|
10:05
9:00
|

10:05
Tutorial

12:30

|
10:25
10:25
|
11:50

12:30
|

session 1
Coffee break &Exhibition
Invited speech 1 &Oral session 2

11:50
Lunch

13:30

|

|
14:30
13:30

14:30
Tutorial

17:00

|
14:50
14:50
|
16:15

17:00

Registration &|Welcome reception

19:00

with light meals

16:15
|
18:15

8:10
|
10:05
10:05
|
10:25
10:25
|
11:50
11:50

Lunch & Exhibition

13:05
13:05

|

Keynote 1 & Oral

|
13:25

Invited speech 2 &Oral session 3
Coffee break &Exhibition
Invited speech 3 &Oral session 4

13:25
|
14:50
14:50
|
15:05
|

Cheese & Wine with|light meals and

16:55"Wagashi" making

Keynote 2 & Oral
session 5
Coffee break &Exhibition
Invited speech 4 &Oral session 6
Award ceremony
Lunch & Exhibition

7:00

Registration

8:00

Keynote 3 & Oral|

session 9

9:55
9:55

Coffee break &|Exhibition

10:15
10:15
|

Invited speech 6 &Oral session 10

11:40
11:40

Student paper award &|Final day lucky selection

12:20& Closing remarks

12:20
|

Lunch

13:20

Invited speech 5 &Oral session 7
Coffee break &Exhibition

13:30
|

Oral session 8

17:15

Optional social
event (Excursion)

16:25
16:25

demonstration of

Next ICPT
Presentation

15:05

Poster session 1,

Japanese sweets

Registration

November 2

Special event
speech

16:55

Poster session 2,|

Demonstration of

18:55

sword polishing

19:00

Banquet with|

Geisha, Sake, Sushi

21:00

and Tempura

Topic # Topics Area
C01
C02
C03
C04
C05
C06
C07
C08
C09
C10
C11
C12

FEOL CMP
BEOL CMP
Defects, reliability issues and Post CMP cleaning
CMP fundamentals, modeling and simulation
Equipment and metrology
Process control
Emerging technologies in CMP
CMP consumables
3D ICs/TSV applications
Alternative CMP technologies
CMP for MEMS
Wafer polish such as Si, SiC, GaN and Diamond

KN: Keynote Lecture
IS: Invited Speech
O**: Oral presentation number
P**: Poster presentation number

ICPT 2023 Program (Kanazawa Tokyu Hotel) ver. 20231017
Monday October 30, 2023
7:30

Tutorial Registration Open

9:00~17:00

Tutorial

17:00~19:00

Registration &Welcome reception with light meals

Tuesday October 31, 2023
7:00

Conference Registration Open
Opening Remarks

Prof. Syuhei Kurokawa

Keynote Lecture 1

Session Chair : Dr. Seiichi Kondo

8:00~8:10
Challenges in Scalable Manufacturing Technology for Highly-Stacking 3D Flash Memory
8:10~8:45

KN1

Hideshi Miyajima
KIOXIA

Oral session 1

Session Chair : Dr. Knut Gottfried
Impact of Tungsten material properties on W CMP buffing step performance

8:45~9:05

O01 C01 Aurore Bonnevialle, Lionel Balme, Silvio Del Monaco, Yannick Le Friec, Alain Baron, Sébastien Petitdidier
STMicroelectronics
STI CMP process development for monolithic CFET integration

9:05~9:25

O02 C01 Kevin Vandersmissen, Davy Pittevils, Evi Vrancken, Jelle Vande Weeghde, Herbert Struyf, Katia Devriendt
IMEC vzw
Observation of Nano-particle Transportability in Shear Flow on a Surface as a Rinse Cleaning by Evanescent Field

9:25~9:45

O03 C03

Yu Arima, Hibiki Fujishima, Panart Khajornrungruang, Satomi Hamada, Tomoya Nishi, Yutaka Wada, Hirokuni
HiyamaKyushu Institute of Technology, EBARA Corporation
Investigation of Corrosion Inhibitors during the Cobalt Bulk CMP Process

9:45~10:05

O04 C04 Qinhua Miao, Yaran Lv, Dingwei Liu, Jie Cheng, Shirong Ge
China University of Mining & Technology-Beijing

10:05~10:25

Break & Exhibition

Oral session 2
10:25~10:50
InvitedSession Chair : Dr. Patrick Ong
Challenges for CMP in Advanced Scaling
IS1

Katia Devriendt
IMEC vzw
ACHIEVE UNIFORM REMOVAL BY WAFER EXTREME EDGE CONTROL FOR BONDING APPLICATIONS

10:50~11:10

O05 C01

Julian Sturm, Gaël Royere, Catherine Euvrad-Colnat, Salma Bensalem, Franck Fournel, Christophe Morales, Clement
Castan, Cedric Perrot, Victor Soty, Keisuke Namiki, Osamu Nabeya, Kenrei Tei, Tomomi Ueda, Christophe Gillot
CEA-Leti, EBARA Corporation
Optimization of Pre-Bonding Surface for Cu/SiCN Hybrid Bonding

11:10~11:30

O06 C09 Kohei Nakayama, Kenta Hayama, Mai La Thi Ngoc, Fumihiro Inoue
Yokohama National University
Study on CMP Process of Nanotwinned Cu microbumps in Polyimide for 3D IC Hybrid bonding

11:30~11:50

O07 C09 Pin-Syuan He, Chun-Wei Tu, Kai-Cheng Shie, Chih Chen

11:50~13:05

Lunch & Exhibition

National Yang Ming Chiao Tung University
Oral session 3
13:05~13:30
InvitedSession Chair : Dr. Robert Rhoades
Opportunities and Challenges in DRAM CMP development
IS2

Ryoichi Tanabe
Micron Memory Japan
FAST ADAPTATION OF MACHINE LEARNING CMP SOLUTIONS TO EMERGING TECHNOLOGIES

13:30~13:50

O08 C03

Davit Piliposyan, Ruben Ghulghazaryan, Jeff Wilson, Ushasree Katakamsetty, Sam Nakagawa, Stefan Nikolaev
Voykov, Lim Kian Hong, Liew Siew Wan, Guan Xiaochong
SIEMENS Industry Software, SIEMENS EDA, GLOBALFOUNDRIESTOWARD MINIMIZING CERIA-RELATED DEFECTS: AN IN-DEPTH ANALYSIS OF CERIA REMOVAL MODELS AND

13:50~14:10

O09 C03

THEIR ASSOCIATED DEFECTS DURING BRUSH SCRUBBING
Van-Tuan Nguyen, James Wait, Tomoya Nishi, Satomi Hamada, Hirokuni Himaya, Jihoon Seo
Clarkson University, EBARA Corporation

Surfactant-Mediated Non-Contact Dual Jet Cleaning for Post-CMP Wafer Surface
14:10~14:30

O10 C03 Wafi Aziz, Takuo Sugioka, Kazuya Date, Yasushi Fujii, Takako Harigae, Mina Tsujiwaki, Jihoon Seo

14:30~14:50

Break & Exhibition

Clarkson University, NIPPON SHOKUBAI CO., LTD.
Oral session 4
14:50~15:15
InvitedSession Chair : Prof. Yasuhisa Sano
CMP considerations for Fabs of the future
Gowrisankar Damarla

IS3

Texas Instruments
Quantitative measurement of pad debris in CMP slurries with Holographic Characterization

15:15~15:35

O11 C05

Fook Chiong Cheong, Juliana Lumer, Tiffany Markus, Laura Philips, Yongneng Wu, Nai-Chieh Huang, Max Gage,
Jianshe Tang
Spheryx, Inc., Applied Materials
THERMAL EFFECT IN OXIDE FILM CHEMICAL MECHANICAL POLISHING

15:35~15:55

O12 C06 Pengzhan Liu, Wookyung Jeon, Jangwon Seo, Taesung Kim
Sungkyunkwan University
Analysis of subsurface damage structures for mechanically processed GaN substrates

15:55~16:15

O13 C12 Natsuko Omiya, Hideo Aida, Hidetoshi Takeda, Toshiro Doi
Sanoh Industrial Co. Ltd. ,Nagaoka University of Technology, Doi Laboratory Inc.

Poster session 1,

16:15~18:15

Session Chair: Prof. Norikazu Suzuki(Cheese & Wine with light meals and Demonstration of Japanese Sweets(17:00~19:00)"Wagashi" making)Wednesday November 1, 2023
7:00

Registration
Next ICPT presentation

8:00~8:10
Keynote Lecture 2

Session Chair : Dr. Yukiteru Matsui

What is CMP!?!?
8:10~8:45

KN2

Isao Nambu
EBARA Corporation

Oral session 5

Session Chair : Prof. Jingoo Park
DEVELOPMENT OF NEXT-GENERATION CMP PAD CONDITIONER FOR ADVANCED CMP TECHNOLOGY

8:45~9:05

O14 C08

Yongsik Moon, Kyoung-Kuk Kwack, Joohan Lee, Jongkuk Park, Eunhwa Song, Youngtae Jeon, Sungyu Park, Yujeong
Jin, Jongjae Lee, Jae-Ho Kim
EHWA Diamond, EHWA Diamond-Japan
Improving Yield through Reduction of FPC with an Advanced Filtration Strategy

9:05~9:25

O15 C08 Yu-Chieh Fu , Chloe Chen, Yi-Wei Lu
Entegris Inc.
Influence of Pad Surface Texturing on STI Planarization Performances using Silica based Slurries

9:25~9:45

O16 C08

Lucie Safourcade, Cécile Candegabe, Amélie Lambert, Camille Sgrillo, Aurore Bonnevialle, Cédric Perrot, Catherine
Euvrard, Viorel Balan
CEA LETI, STMicroelectronics
Polishing Mechanism Based on Morphological and Chemical Quantification of Pad Surface in Chemical-Mechanical
Planarization

9:45~10:05

O17 C08 Takuro Ito, Takashi Fujita, Kaito Yonemoto, Yuki Arai, Hirokuni Hiyama, Yutaka Wada, Hozumi Yasuda, Ryota
KoshinoKindai University, EBARA Corporation

10:05~10:25

Break & Exhibition

Oral session 6
10:25~10:50
InvitedSession Chair : Prof. Baoguo Zhang
Challenges of CMP for the next generation logic devices
IS4

Kiho Bae
Samsung Electronics
A predictive model for scratch defect numbers according to CMP Pads

10:50~11:10

O18 C03 Hyeongmin Je, Dong Geun Kim, Haesung A. Lee, Sanha Kim
KAIST, Samsung Electronics Co., Ltd
Effect of etchants and oxidizers on the Molybdenum surfaces during post-CMP cleaning process

11:10~11:30

O19 C03 Palwasha Jalalzai, Nayoung Kang, Sumit Kumar,Tae-Gon Kim, Jin-Goo Park
Hanyang University

Contact and non-contact PVA brush conditioning during oxide and metal post-CMP cleaning
11:30~11:50

O20 C03 Sanjay Bisht, Maheepal Yadav, Sumit Kumar, Satomi Hamada,Tae-Gon Kim, Jin-Goo Park
Hanyang University, EBARA Corporation
Award Ceremony

11:50~12:10
12:10~13:25

Lunch & Exhibition

Oral session 7
13:25~13:50
InvitedSession Chair : Prof. Taesung Kim
History and Innovation of CMP Slurry Development
IS5

Hitoshi Morinaga
Fujimi Incorporated
Elementary Reaction Analysis of the Effects of Hydrogen Peroxide on Copper CMP

13:50~14:10

O21 C04 Hitomi Takahashi, Satoyuki Nomura
Hitachi, Ltd., Resonac Corporation
Pad Material Properties and Conditioning Response

14:10~14:30

O22 C04 Andrew Scott Lawing
Kinik North America
Computational Study on the Polishing Mechanism of Nano-sized CeO2 Abrasives in CMP

14:30~14:50

O23 C04 Teruo Hirakawa, Fukiko Ota, Nanami Antoku, Daisuke Iikura, Akihiro Orita, Satoyuki Nomura, Yoshishige Okuno

14:50~15:05

Break & Exhibition

Resonac Corporation
Oral session 8

Session Chair : Mr. Bradley H. Wood
Novel Synthesis of Spherical Nano Ceria Particle for Advanced STI CMP Slurry Development

15:05~15:25

O24 C07 Yang-Yao Lee, Ming-Che Ho
Vibrantz Technologies
Challenges and Solutions in Si CMP for Packaging Applications

15:25~15:45

O25 C07 K. Mikhaylichenko, E. Lau, R. Fernando, B. Cherian, B. Brown
Applied Materials
Core-Shell structured Fe3O4@SiO2 Nanoparticles with Superparamagnetic and Abrasive properties for Enhanced

15:45~16:05

O26 C07

Tungsten Chemical Mechanical PlanarizationJi Hun Jung, Jong Hun Kim, Ho Sung Kim, Tae Hwan Jang, Gye Seok An
Kyonggi University
Suppression of Molybdenum dissolution rate via catalytic-oxidation in chemical mechanical planarization

16:05~16:25

O27 C07 Kangchun Lee
Kyonggi University
Special Event Speech

Session Chair : Prof. Michio Uneda

Manufacturing Process and Technical Transmission of Japanese Sword, and Demonstration of Japanese Sword
16:25~16:55

SES

Polishing (The Techniques and Hearts of the Swordsmith & Sword Polisher)
Ippei Kawachi (Japanese swordsmith), Tatsuya Fujishiro (Japanese sword polisher)

Poster session 2,

16:55~18:55

Session Chair: Prof. Norikazu Suzuki

Demonstration of sword polishing
Banquet with Geisha, Sake, Sushi and Tempura

19:00~21:00

Thursday November 2, 2024
7:00

Registration
Keynote Lecture 3

Session Chair : Prof. Norikazu Suzuki

3D Stacking Process Technologies for Advanced CMOS Image Sensors
8:00~8:35

KN3

Yoshihisa Kagawa
SONY Semiconductor Solutions Corporation

Oral session 9

Session Chair : Dr. Kazumi Sugai
Cu/SiCN CMP process optimization targeting sub 1 μm pitch W2W hybrid bonding

8:35~8:55

O28 C09 Sven Dewilde, Diana Tsvetanova, Soon Aik Chew, Joeri De Vos, Nancy Heylen, Katia Devriendt
IMEC vzw
Cu dishing reduction on CBA (CMOS directly Bonded to Array) process for 3D flash memory

8:55~9:15

O29 C09

Takashi Watanabe, Tomonori Kawasaki, Masayoshi Adachi, Takamitsu Hori, Masayuki Fukumoto, Yukinobu
Ishiyama
KIOXIA Corporation

CMP Technology of Filler-containing Resin for Advanced Packaging
9:15~9:35

O30 C09 Ryo Wakabayashi, Masayuki Serikawa, Hiroyasu Sugiyama, Hitoshi Morinaga
Fujimi Incorporated
Feature-Scale 3D CMP Modeling: Physics-Based and Machine Learning Perspectives

9:35~9:55

O31 C04 Ruben Ghulghazaryan, Davit Piliposyan, Yorio Takada, Jeff Wilson, Tomoaki Kuramasu, Daisuke Hori

9:55~10:15

Break & Exhibition

Siemens Industry Software, Micron Memory Japan, SIEMENS EDA, SIEMENS EDA Japan
Oral session 10
10:15~10:40
InvitedSession Chair : Dr. Yohei Yamada
Industry Inflections Poised to Impact Metal CMP
IS6Brian Brown
Applied Materials
NANO-SCALE METAL LOSS DURING CHEMICAL-MECHANICAL PLANARIZATION

10:40~11:00

O32 C03 Wei-Tsu Tseng, Emiko Motoyama, Koichi Motoyama, Atharv Jog, Pinlei Chu, Donald Capaneri
IBM Semiconductor Technology Research
Formulated Chemicals for Removal of Cerium Atoms in Post-CMP Clean

11:00~11:20

O33 C03 Hiroyuki Shirae, Tomohiro Kusano, Kan Takeshita
Mitsubishi Chemical Corporation
Megasonic Activated Slurry Chemistries for Enhanced SiC CMP

11:20~11:40

O34 C12 Joseph T. Powell, Yasa Sampurno, Ara Philipossian, Jason J. Keleher

11:40~12:00

Student Paper Award

Prof. Syuhei Kurokawa

12:00~12:10

Final day lucky selection

Dr. Seiichi Kondo

12:10~12:20

Closing Remarks

Prof. Michio Uneda

12:20~13:20

Lunch

Lewis University, Araca Inc

13:30~17:15

Optional social event (Excursion)

ICPT 2023 Poster Session List ver. 20231017
Poster session 1 (Tuesday October 31, 2023; 16:15~18:15)
Verification of novel CMP slurry model to improve the issue of adherent defects on polycrystalline silicon film
P1

C01

Daiki Ito, Haruka Asano, Naoyuki Ishihara, Tatsuhiko Hirano, Kazumi Sugai
Fujimi Incorporated
Achieving Multiple Selectivity by Designed Additives in Ceria Slurry Formulation for 3D NAND Memory Technology

P2

C01

Yang-Yao Lee, Ming-Che Ho
Vibrantz Technologies

P3
Effect of chelating agents on the removal of Ti ion during W post-CMP cleaning
P4

C03

Palwasha Jalalzai, Ranjith Punathil Meethal, Tae-Gon Kim, Andreas Klipp, Jin-Goo Park
Hanyang University, BASF SE
Effect of cobalt ion on silica loading to PVA brush during Co Post-CMP cleaning

P5

C03

Maheepal Yadav, Sanjay Bisht, Sumit Kumar, Satomi Hamada, Tae-Gon Kim, Jin-Goo Park
Hanyang University, EBARA Corporation
Evaluation and effective removal of organic impurity sources during the synthesis process of roller-type PVA brushes

P6

C03

for efficient post-CMP cleaning
Suprakash Samanta, Kwang-Min Han, Tae-Gon Kim, Jin-Goo Park
Hanyang University
New Generation Post-CMP Clean Formulation for Excellent Residue Clean and Superior Metal Compatibility

P7

C03

Jacky Cheng, Peter Sun, Wayne Lin, Wei-En Huang, Chuan-An Kao, Shelly Yang, Alan Chen, Pascal Berar, Ping Hsu
DuPont Electronics & Industrial
Novel Spiral Layout Design Roller Sponge

P8

C03

Fu-Qiang Zhang, Hung-Chieh Chao, Tzu-Yen Chuang, Chih-An Ku
Tung An Development Ltd.
A novel approach for PVA brush evaluation by contact area analysis during metal and oxide post-CMP cleaning

P9

C03

Mir Jalal Khan, Suprakash Samanta, Geurim Ha, Ji-Hoon Son, Toshiyuki Sanada, Tae-Gon Kim, Jin-Goo Park
Hanyang University, KC Tech, Shizuoka University
Effect of Cleaning Chemicals on Defects of PVA Brush during Post-CMP Cleaning

P10

C03

Kwang-Min Han, Suprakash Samanta, Tae-Gon Kim, Jin-Goo Park
Hanyang University
Observation of PVA roller brush nodule deformation and liquid movement

P11

C03

Shota Suzuki, Yuki Mizushima, Satomi Hamada, Ryota Koshino, Toshiyuki Sanada
Shizuoka University, EBARA Corporation
Effect of cleaning efficiency of SC-1 depending on temperature and time

P12

C03

Chulwoo Bae, Juyong Lee, Seungjun Oh, Jungjae Park, Taesung Kim
Sungkyunkwan University, Horiba Stec Korea, Ltd.
Evaluation Method of Eluted Substance from PVA Sponge

P13

C03

Megumi Uno, Yumiko Nakamura, Chikako Takatoh
EBARA Corporation
High water permeability and more uniformity water flow roller sponge

P14

C03

Wan-Ting Chang, Tsai-Hua Chiu, Fu-Qiang Zhang, Hung-Chieh Chao, Tzu-Yen Chuang, Chih-An Ku
Tung An Development Ltd.
Investigation of Cleaning Effects of Gas Dissolved Water (GDW) for Ceria Nano Particles on the SiO2 and Si3N4 Film

P15

C03

Surfaces
Kihong Park, Sanghyeon Park, Wookyung Jeon, Taesung Kim
Sungkyunkwan University, 3M
Thermal Effect on Oxidation of Molybdenum Surface during Chemical Mechanical Planarization Process

P16

C03

Wookyung Jeon, Sanghuck Jeon, Taesung Kim
Sungkyunkwan University
Superior Post-CMP Cleaning Formulation for Molybdenum and Tungsten

P17

C03

Eddie I-Chun Chang, Pei Huang, Wayne Lin, Shelly Yang, Fred Huang, Chuan-An Kao, Ping Hsu
DuPont Electronics & Imaging

P18

Optimization of cleaning method for PVA brushes
P19

C03

Tomoya Nishi, Naoyuki Handa, Satomi Hamada,Hozumi Yasuda, Yutaka Wada
EBARA Corporation
Surface and Cleanliness Treatment of PVA Brush Used for Post-CMP Process

P20

C03

Wan-Ting Chang, Tsai-Hua Chiu, Fu-Qiang Zhang, Hung-Chieh Chao, Tzu-Yen Chuang, Chih-An Ku
Tung An Development Ltd.

P21
Polishing Mechanisms in CMP through Slurry Particle Behavior and Pad Surface Topography Observation Affecting
Polishing Performance
P22

C04

Syuhei Kurokawa, Toya Takahashi, Terutake Hayashi, Shuntaro Hayashi, Yutaka Wada, Hozumi Yasuda, Hirokuni
HiyamaKyushu University, EBARA Corporation
Simulation of CMP abrasive behavior considering pad surface topography

P23

C04

Taku Ishihara, Akihito Hashimoto, Norikazu Suzuki, Yohei Hashimoto, Satoru Yamaki, Hozumi Yasuda, Yoshihiro
Mochizuki
Chuo University, Kanazawa University, EBARA Corporation
Development of ζ-potential simulation scheme

P24

C04

Tsukuru Ohwaki, Kazumi Sugai
Fujimi Incorporated
Prediction of Material Removal Rate for poly-Si CMP using Atomic Force Microscope

P25

C04

Sanghwan Choi, Eungchul Kim, Taesung Kim
Sungkyunkwan University
Development of a Simulation Method for Material Removal Rate Distribution Considering Slurry Polishing Ability

P26

C04

Akira Fukuda, Hisanori Matsuo, Yoshihiro Mochizuki, Masashi Obuchi
National Institute of Technology Tokuyama College , EBARA Corporation
Copper CMP modeling considered with temperature function for prediction of planarization time

P27

C04

Yeongil Shin, Jongmin Jeong, Seunghun Jeong, Masashi Kabasawa, Hirokuni Hiyama, Hisanori Matsuo, Katsuhide
Watanabe, Yutaka Wada, Haedo Jeong
Pusan National University , EBARA Corporation

P28
Development of a Wet-type Pad Contact Area Measurement Apparatus for Cu-CMP
P29

C05

Le Nam Quoc Huy, Yueh-Hsun Tsai, Le Ngoc Quynh Hoa, Chao-Chang A. Chen
National Taiwan University of Science and Technology, Nanyang Technological University
INLINE REFRACTIVE INDEX-BASED SLURRY DENSITY MONITORING TO OPTIMIZE RAW CMP SLURRY CONTAINER

P30

C05

DISPERSION
Carlo Aparece, Marcus Kavaljer, Pat Swayze
Kinetics – Mega Fluid Systems, KXS Technologies
Evaluation of adhesion between wafer surface and polymer layer using in-liquid AFM

P31

C05

Yuichi Watanabe, Shota Suzuki, Tatsuhiko Hirano, Kazumi Sugai
Fujimi Incorporated
Application of CMP to package panel

P32

C05

Hirotaka Satori, Ji-Chul Yang
EBARA Corporation
A High Accurate Method for Characterizing the Particle Size Distribution of CMP Slurries Using Liquid Cell TEM

P33

C05

Chia-Ming Yang, Po-Tsung Hsieh, In-Gann Chen
National Cheng Kung University
Development of new polishing concept using magnet

P34

C05

Tatsuyuki Wada, Michio Uneda, Tadakazu Miyashita, Yuko Yamamoto, Ken-ichi Ishikawa
Kanazawa Institute of Technology, Fujikoshi Machinery Corp.

Poster session 2 (Wednesday November 1, 2023; 16:55~18:55)
ONLINE LPC MONITORING OF CERIA SLURRIES IN A SIMULATED SLURRY DISTRIBUTION LOOP
P35

C06

Carlo Aparece, Mark Bumiller
Kinetics - Mega Fluid Systems, Entegris Inc.
Prediction of CMP Material Removal Rate Based on XGBoost Considering Pad Degradation

P36

C06

Jongmin Jeong, Yeongil Shin, Seonho Jeong, Masashi Kabasawa, Hirokuni Hiyama, Hisanori Matsuo, Katsuhide
Watanabe, Yutaka Wada, Haedo Jeong
Pusan National University, EBARA Corporation
Investigating the effects of slurry temperature on reducing Tungsten recess in chemical mechanical planarization

P37

C06

Sanghuck Jeon, Xue Wensing, Wookyung Jeon, Chul Kang, Taesung Kim
Sungkyunkwan University
Study on the Removal Rate Improvement of Cell-Peri Height Difference in DRAM ILD-CMP Process

P38

C06

Min Jung Kim, Jae Yong Han, Dong Hyun Lim, Joon Bae Jeon
Samsung Electronics
Prediction of Pad Lifetime for Cu-CMP via Convolutional Neural Network

P39

C07

Seunghwan Lee, Jaewon Lee, Pengzhan Liu, Sanghyuk Jeon, Taesung Kim
Sungkyunkwan University
Characterization of Vat Photopolymerization Additively Manufactured CMP Pads

P40

C07

Dong Geun Kim, Sanha Kim
KAIST
Plasma-Assisted CMP for Planarization of Adhesive Polymers in 3D Stacked Semiconductor Devices

P41

C07

Sukkyung Kang, Juseong Park, Chan Su Jeon, Kyung Min Kim, Sanha Kim
KAISTStudy of plasma CMP processing mechanism and path to practical application

P42

C07

Yuto Sawayama, Chihiro Miyagawa, Masaki Wada, Toshiro Doi, Hidetoshi Takeda, Hideo Aida
Nagaoka University of Technology, Fujikoshi Machinery CO. LTD, Doi Laboratory Inc.
Competitive edge of CMP industries in the DX/SDGs era -A Technology Management perspective-

P43

C07

Yashuhiko Takeno, Kazuya Okamoto
Yamaguchi University
Opening of the Backside of ICs for Failure Analysis by Using CMP

P44

C07

Gerfried Zwicker, Christian Boit, Awwal Adesunkanmi, Norbert Herfurth
Zwickerconsult, Technical University Berlin, IHP - Leibniz-Institut für innovative Mikroelektronik
CMP Pad Surface Conditioning Solution for Consistent CMP

P45

C08

Masashi Norimoto, Kok Chian Loh, Jeffrey Yeh, Waldo Wang, Yi He, Vincent Laraia
3M Japan Innovation Limited, 3M Singapore Pte. LTD, 3M Taiwan LTD, 3M Company
Impact of water consumption on pad surface properties, case study for 3D-printed CMP polishing pads

P46

C08

Aurore Bonnevialle, Hugo Perret, Lionel Balme, Valérie Dupuy, Nicolas Daventure, Sébastien Petitdidier
STMicroelectronics, Applied Materials
Relationship between visualization of the polishing interface and removal rate in resin CMP

P47

C08

Hiroki Matsunaga, Mizuki Hatatani, Michio Uneda, Hiroyuki Ishida, Kazutoshi Hotta, Hitoshi Morinaga
Kanazawa Institute of Technology, Fujimi Incorporated
An Improved Large Format Conditioning Platform

P48

C08

Jui-Lin Chou, Chih-Chung Chou, Cheng-Te Lin, Andrew Scott Lawing
Kinik Company, Kinik North America
CMP Filter pore size coverage for abrasive size and concentration

P49

C08

Fumiaki Hashisako, Bradley H. Wood
Nihon Entegris G. K., Entegris Inc.
The impact of consumable properties on 3-D polishing through visualization of the polishing process

P50

C08

Kotaro Saito, Michio Uneda, Kyousuke Tenkou, Kazutoshi Hotta, Hitoshi Morinaga
Kanazawa Institute of Technology, Fujimi Incorporated

P51
Ceria-based Bulk Oxide Slurry Development
P52

C08

Pengyu Xu, Xiaojia Xu, Yinbin Chen, Eric Wang, Yang Yang, Huiwen Wang, Rundi Cai, Tingting Niu, Changzheng Jia,
Shoutian LiAnji Microelectronics Technology

P53
Challenges and Solutions for High Step Height CMP
P54

C08

Masaki Inoue, Norihito Yamaguchi
Kao Corporation
Improvement of polishing performance of hydrogen reduced ceria slurry in STI CMP

P55

C08

Jaewon Lee, Seunghwan Lee, Chulwoo Bae, Eungchul Kim, Taesung Kim
Sungkyunkwan University, Samsung Electronics
Dishing Reduction Effect of Polyglycerol in Cu-CMP

P56

C08

―Consideration of CMP Mechanism by Dynamic Electrochemical Analysis, and Proposal for New Slurry―
Keiji Takashige, Masato Kashiwazaki, Kiyoshi Mori, Keisuke Suzuki, Toshiro Doi
Sakamoto Yakuhin Kogyo Co., Ltd., Kyusyu Institute of Technology, Kyushu University, Doi Laboratory Inc.
pH Modulation in Abrasives Solutions and the Impact on System Filtration

P57

C08

Bradley H. Wood, Adam Caridi
Entegris Inc, Lewis University
TSV CMP Slurry Application for Hybrid Bonding

P58

C09

Allison Yuling Hsu, Leo Huang, Robert Auger, Hua Dong, Kazuki Moriyama, Hirofumi Kashihara, Syin Hsu
DuPont, NITTA DuPont Incorporated
Wafer surface ironing for distributed Bragg reflectors by standard CMP resources

P59

C10

Conrad Guhl, Felix Mende, Likhith Gummadi, Felix Köhler, Marcus Wislicenus
Fraunhofer Institute for Photonic Microsystems IPMS
Study on sonic-assisted processing method for micro pattern formation of Cu film surface

P60

C10

Soma Yamamoto, Yuho Fukushige, Hideaki Nishizawa, Panart Khajornrungruang, Keisuke Suzuki
Kyushu Institute of Technology
Dishing Control and Surface Properties Improvement of Nano Twinned Copper/Polyimide (Nt-Cu/PI) Patterned Wafer
by Electro-Kinetic Force Assisted Chemical Mechanical Planarization (EKF-CMP)

P61

C10

Cheng Jhong, Yueh-Hsun Tsai, Li-Shin Lu, Chih Chen, Le Nam Quoc Huy, Chao-Chang A. Chen
National Taiwan University of Science and Technology, National Quemoy University, National Yang Ming Chiao Tung
University
Mirror-finishing technology for SiC substrates using PCD tools with high-density cutting edges

P62

C10

Haruto Konishi, Takashi Fujita, Ryota Fukunaga, Yasuo Izumi, Junji Watanabe
Kindai University, Shin-Nihon Tech

P63
Using Surface Photovoltage Spectroscopy for Wafer Inspection
P64

C12

Knut Gottfried, Imme Ellebrecht, Thomas Clausen, Kay Dornich, Nadine Schüler
ErzM-Technologies UG, Freiberg Instruments GmbHComparison of Polishing Surface of Alumina Slurry and Silica Slurry

P65

C12

Shinichiro Takami, Shinya Hirano
Fujimi Incorporated
High performance chemical mechanical polishing slurry for Gallium Nitride

P66

C12

Junchao Huo, Weili Liu, Zhitang Song
Chinese Academy of Sciences, Shanghai Xinanna Electronic Science & Technology Co. Ltd

P67
P68