NIKO-SEM

N-Channel Enhancement Mode
Field Effect Transistor

PKC26BBPDFN 5x6P
Halogen-Free & Lead-Free

PRODUCT SUMMARY
V(BR)DSSRDS(ON)ID430V

1.6mΩ

151A

DGFeatures• Pb−Free, Halogen Free and RoHS compliant.
• Low RDS(on) to Minimize Conduction Losses.
• Ohmic Region Good RDS(on) Ratio.
• Optimized Gate Charge to Minimize Switching Losses.

S
D

D

D

D

G. GATE
D. DRAIN
S. SOURCE

Applications• Protection Circuits Applications.
• Computer for DC to DC Converters Applications.
#1 S

S S

G

100% UIS Tested
100% Rg Tested

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONSSYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS±20V

Continuous Drain Current4

TC = 25 °C

ID

TC = 100 °C

Pulsed Drain Current1
Continuous Drain Current

IDM
TA = 25 °C

ID

TA = 70 °C

Avalanche Current
Avalanche Energy
Power Dissipation
Power Dissipation3

L = 0.1mH
TC = 25 °C
TA = 25 °C

Operating Junction & Storage Temperature Range

200
36EAS

162

Tj, Tstg

A

2857

PD

TA = 70 °C

95IAS

PD

TC = 100 °C

15173294.1
2.6-55 to 150

mJW
W
°C

G-48-2

REV 1.01

N-Channel Enhancement Mode
Field Effect Transistor

NIKO-SEM

PKC26BBPDFN 5x6P
Halogen-Free & Lead-Free

THERMAL RESISTANCE RATINGSTHERMAL RESISTANCE

SYMBOLTYPICALMAXIMUM

Junction-to-Ambient2t ≦10sRJA

30

Junction-to-Ambient2

Steady-State

RJA

50

Junction-to-Case

Steady-State

RJC

1.7

UNITS

°C / W

1Pulse width limited by maximum junction temperature.
The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3
The Power dissipation is based on RJA t ≦10s value.
4
The maximum current rating is package limited.
2ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETERSYMBOLTEST CONDITIONSLIMITSUNIT
MIN TYP MAX

STATIC
Drain-Source Breakdown Voltage

V(BR)DSSVGS = 0V, ID = 250A

30

Gate Threshold Voltage

VGS(th)VDS = VGS, ID = 250A

1.3

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

Zero Gate Voltage Drain Current

IDSSVDS = 24V, VGS = 0V

1VDS = 20V, VGS = 0V, TJ = 55 °C

10Drain-Source On-StateResistance1RDS(ON)Forward Transconductance1

gfs

1.6

2.35

VGS = 4.5V, ID = 20A

1.6

2.3

VGS = 10V, ID = 20A

1.1

1.6

VDS = 5V, ID = 20A

123

VnA
AmΩ
S

DYNAMIC
Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Gate ResistanceRg

Total Gate Charge2

Qg

Gate-Source Charge

2Gate-Drain Charge2
Turn-On Delay Time
Rise Time

2Turn-Off Delay Time
Fall Time2223499
VGS = 0V, VDS = 15V, f = 1MHz625pF

408
VGS = 0V, VDS = 0V, f = 1MHz

1.1

Ω70

VGS = 10V
VGS = 4.5V

VDS = 15V , VGS = 10V,
ID = 20A

Qgs

36
9.2

Qgd

17td(on)

20tr

VDS = 15V ,120td(off)ID  20A, VGS = 10V, RGEN =6Ω

97tfnCnS150

G-48-2

REV 1.02

N-Channel Enhancement Mode
Field Effect Transistor

NIKO-SEM

PKC26BBPDFN 5x6P
Halogen-Free & Lead-Free

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current31IS

Forward Voltage

VSD

Reverse Recovery TimetrrReverse Recovery ChargeQrr

IF = 20A, VGS = 0V
IF = 20A, dlF/dt = 100A / S73A

1V28nS13nC

1Pulse test : Pulse Width  300 sec, Duty Cycle  2％.
Independent of operating temperature.
3
The maximum current rating is package limited.
2G-48-2

REV 1.03

N-Channel Enhancement Mode
Field Effect Transistor

NIKO-SEM

PDFN 5x6P
Halogen-Free & Lead-Free

Output Characteristics

30

PKC26BB

Transfer Characteristics

30

ID, Drain-To-Source Current(A)ID, Drain-To-Source Current(A)VGS=2.7V
VGS=10V
VGS=9V
VGS=8V
VGS=7V
VGS=6V
VGS=5V
VGS=4.5V
VGS=3V

2418

VGS=2.5V

1262418

1225℃

6125℃-20℃

0001234506VDS, Drain-To-Source Voltage(V)12345VGS, Gate-To-Source Voltage(V)On-Resistance VS Gate-To-Source

On-Resistance VS Drain Current

0.008

0.004

RDS(ON)ON-Resistance(OHM)

RDS(ON)ON-Resistance(OHM)

ID=20A

0.006

0.004

0.002

024680.0032

0.0024

VGS=4.5V0.0016

VGS=10V

0.00080100VGS, Gate-To-Source Voltage(V)On-Resistance VS Temperature

12182430

Capacitance Characteristic

4500
4000

1.8

3500

1.6

C , Capacitance(pF)

Normalized Drain to Source
ON-Resistance

2.06ID , Drain-To-Source Current(A)

1.4
1.2
1.0
0.8
VGS=10V
ID=20A

0.6

CISS

3000
2500
2000
1500
1000
COSS500

CRSS
0.4
-50

-2502550

75

100

1250150

051015202530

VDS, Drain-To-Source Voltage(V)TJ , Junction Temperature(˚C)

G-48-2

REV 1.04

N-Channel Enhancement Mode
Field Effect Transistor

NIKO-SEM

PDFN 5x6P
Halogen-Free & Lead-FreeGate charge Characteristics

Source-Drain Diode Forward Voltage
1000

VDS=15V
ID=20A
8100

IS , Source Current(A)VGS , Gate-To-Source Voltage(V)10

PKC26BB

64210150℃

25℃

10.1

00204060

80

0.0

100

0.2

Qg , Total Gate Charge(nC)

0.4

0.6

0.8

1.0

Safe Operating Area

1.4

Single Pulse Maximum Power Dissipation
150

1000
Operation in This
Area is Limited byRDS(ON)Single Pulse
RθJA = 50 ˚C/W
TA = 25˚C
120Power(W)100

ID , Drain Current(A)

1.2

VSD, Source-To-Drain Voltage(V)

101ms
10ms

19060100ms
NOTE :
1.VGS = 10V
2.TA = 25˚C
3.RθJA = 50 ˚C/W
4.Single Pulse

0.1

0.01
0.01

30

DC

0.1

11000.001

100VDS, Drain-To-Source Voltage(V)

0.01

0.1

110100Single Pulse Time(s)Transient Thermal Response Curve
Transient Thermal Resistancer(t) , Normalized Effective

101Duty cycle=0.5
Notes

0.2
0.1

0.1
0.05

1.Duty cycle, D= t1 / t2
2.RthJA = 50 ℃/W
3.TJ-TA = P*RthJA(t)4.RthJA(t) = r(t)*RthJA

0.020.01
single pulse
0.01
0.00010.001

0.01

0.1

110

100

T1 , Square Wave Pulse Duration[sec]G-48-2

REV 1.05