MCP73831/2
Miniature Single-Cell, Fully Integrated Li-Ion,
Li-Polymer Charge Management Controllers
Features

Description:• Linear Charge Management Controller:- Integrated Pass Transistor- Integrated Current Sense- Reverse Discharge Protection• High Accuracy Preset Voltage Regulation: + 0.75%• Four Voltage Regulation Options:- 4.20V, 4.35V, 4.40V, 4.50V• Programmable Charge Current: 15 mA to 500 mA• Selectable Preconditioning:- 10%, 20%, 40%, or Disable• Selectable End-of-Charge Control:- 5%, 7.5%, 10%, or 20%• Charge Status Output- Tri-State Output - MCP73831- Open-Drain Output - MCP73832• Automatic Power-Down• Thermal Regulation• Temperature Range: -40°C to +85°C• Packaging:- 8-Lead, 2 mm x 3 mm DFN- 5-Lead, SOT-23

The MCP73831/2 devices are highly advanced linear
charge management controllers for use in spacelimited, cost-sensitive applications. The MCP73831/2
are available in an 8-Lead, 2 mm x 3 mm DFN package
or a 5-Lead, SOT-23 package. Along with their small
physical size, the low number of external components
required make the MCP73831/2 ideally suited for
portable applications. For applications charging from a
USB port, the MCP73831/2 adhere to all the
specifications governing the USB power bus.

Applications• Lithium-Ion/Lithium-Polymer Battery Chargers• Personal Data Assistants• Cellular Telephones• Digital Cameras• MP3 Players• Bluetooth Headsets• USB Chargers

Typical Application

4.7 μF

4 V
DD

470Ω

1

STAT

+ Single
Li-Ion- Cell5

VSS 2

The MCP73831/2 devices are fully specified over theambient temperature range of -40°C to +85°C.

Package Types

VDD 1

VBAT 34.7 μF
PROG

Several options are available for the preconditioning
threshold, preconditioning current value, charge
termination value and automatic recharge threshold.
The preconditioning value and charge termination
value are set as a ratio or percentage of the
programmed constant current value. Preconditioning
can be disabled. Refer to Section 1.0 “Electrical
Characteristics” for available options and theProduct Identification System for standard options.

MCP73831/2
2×3 DFN*

500 mA Li-Ion Battery Charger

VIN

The MCP73831/2 employ a constant-current/constantvoltage
chargealgorithm
withselectablepreconditioning and charge termination. The constantvoltage regulation is fixed with four available options:
4.20V, 4.35V, 4.40V or 4.50V, to accommodate new,emerging battery charging requirements. The constantcurrent value is set with one external resistor. The
MCP73831/2 devices limit the charge current based on
die temperature during high power or high ambientconditions. This thermal regulation optimizes the
charge cycle time while maintaining device reliability.

VDD 2
VBAT 3
VBAT 42 kΩ

EP
9MCP73831/2
SOT-23-5

8 PROGSTAT 1

5 PROG7 NC

VSS 2
VBAT 3

4 VDD

6 VSS
5 STAT* Includes Exposed Thermal Pad (EP); see Table 3-1.

MCP73831

 2005-2013 Microchip Technology Inc.

DS20001984F-page 1

MCP73831/2
Functional Block Diagram
VDD
6 µA
DIRECTIONCONTROL
VBAT

G=0.001

6 µA

PROG

0.5 µA+-

REFERENCE
GENERATORCA

MCP73831
ONLY

43.6 kΩVREF(1.22V)

361 kΩ
89 kΩ

VDD

3.9 kΩ
+-PRECONDITION

182.3 kΩ111 kΩ

7 kΩ

190 kΩ+TERMINATION+CHARGE

15 kΩ

STAT

+
-

VA

111 kΩ
+-0.5 µA
VBAT

477 kΩ

VSS

255 kΩ

DS20001984F-page 2

100 kΩSHDN+-

DIRECTIONCONTROL+-

UVLO

 2005-2013 Microchip Technology Inc.

MCP73831/2
1.0

ELECTRICAL
CHARACTERISTICS† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above thoseindicated in the operational listings of this specification
is not implied. Exposure to maximum rating conditions
for extended periods may affect device reliability.

Absolute Maximum Ratings†
VDD...................................................................................7.0V
All Inputs and Outputs w.r.t. VSS ............... -0.3 to (VDD+0.3)V
Maximum Junction Temperature, TJ ............ Internally Limited
Storage temperature .....................................-65°C to +150°C
ESD protection on all pins:
Human Body Model (1.5 kΩ in Series with 100 pF).......≥ 4 kV
Machine Model (200 pF, No Series Resistance) .............400V

DC CHARACTERISTICSElectrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(typical) + 0.3V] to 6V, TA = -40°C to +85°C.
Typical values are at +25°C, VDD = [VREG (typical) + 1.0V]
Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Supply Voltage

VDD

3.75

—

6

V

Supply Current

ISS

—

510

1500

µA

Charging

—

53

200

µA

Charge Complete,
No Battery

—

25

50

µA

PROG Floating

Supply Input

—

1

5

µA

VDD < (VBAT - 50 mV)

—

0.1

2

µA

VDD < VSTOPUVLO Start Threshold

VSTART

3.3

3.45

3.6

V

VDD Low-to-HighUVLO Stop Threshold

VSTOP

3.2

3.38

3.5

V

VDD High-to-Low

UVLO Hysteresis

VHYS

—

70

—

mV

4.168

4.20

4.232

V

PIC18FXXXX-2

4.317

4.35

4.383

V

PIC18FXXXX-3

4.367

4.40

4.433

V

PIC18FXXXX-4

4.466

4.50

4.534

V

Voltage Regulation (Constant-Voltage Mode)
Regulated Output Voltage

VREG

PIC18FXXXX-5
VDD = [VREG(typical)+1V]
IOUT = 10 mA
TA = -5°C to +55°C

Line Regulation|(ΔVBAT/
VBAT)/ΔVDD|

—

0.09

0.30

%/V

VDD = [VREG(typical)+1V] to
6V, IOUT = 10 mA

Load Regulation|ΔVBAT/VBAT|

—

0.05

0.30

%

IOUT = 10 mA to 50 mA
VDD = [VREG(typical)+1V]

PSRR

—

52

—-

dB

IOUT=10 mA, 10Hz to 1 kHz

—

47

—

dB

IOUT=10 mA, 10Hz to 10 kHz

—

22

—

dB

IOUT=10 mA, 10Hz to 1 MHz

Supply Ripple Attenuation

Current Regulation (Fast Charge Constant-Current Mode)
Fast Charge Current
Regulation

IREG

90

100

110

mA

PROG = 10 kΩ

450

505

550

mA

PROG = 2.0 kΩ, Note 1

12.5

14.5

16.5

mA

PROG = 67 kΩ
TA = -5°C to +55°C

Note 1:

Not production tested. Ensured by design.

 2005-2013 Microchip Technology Inc.

DS20001984F-page 3

MCP73831/2
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(typical) + 0.3V] to 6V, TA = -40°C to +85°C.
Typical values are at +25°C, VDD = [VREG (typical) + 1.0V]
Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Preconditioning Current Regulation (Trickle Charge Constant-Current Mode)
Precondition Current
Ratio

IPREG / IREG

7.5

10

12.5

%

PROG = 2.0 kΩ to 10 kΩ

15

20

25

%

PROG = 2.0 kΩ to 10 kΩ

30

40

50

%

PROG = 2.0 kΩ to 10 kΩ

—

100

—

%

No Preconditioning
TA = -5°C to +55°C

Precondition Voltage
Threshold Ratio

VPTH / VREG

64

66.5

69

%

VBAT Low-to-High

69

71.5

74

%

VBAT Low-to-High

Precondition Hysteresis

VPHYS

—

110

—

mV

VBAT High-to-Low

ITERM / IREG

3.75

5

6.25

%

PROG = 2.0 kΩ to 10 kΩ

5.6

7.5

9.4

%

PROG = 2.0 kΩ to 10 kΩ

8.5

10

11.5

%

PROG = 2.0 kΩ to 10 kΩ

15

20

25

%

PROG = 2.0 kΩ to 10 kΩ

Charge Termination
Charge Termination
Current Ratio

TA = -5°C to +55°C
Automatic Recharge
91.5

94.0

96.5

%

VBAT High-to-Low

94

96.5

99

%

VBAT High-to-Low

RDSON

—

350

—

mΩ

VDD = 3.75V, TJ = 105°C

Battery Detection Current

IBAT_DET

—

6

—

µA

VBAT Source Current

No-Battery-Present
Threshold

VNO_BAT—

VREG +
100 mV—V

VBAT Voltage >= VNO_BAT for
No Battery condition

No-Battery-Present
Impedance

ZNO_BAT

2

—

—

MΩ

VBAT Impedance >= ZNO_BAT
for No Battery condition,
Note 1

IDISCHARGE

—

0.15

2

µA

PROG Floating

—

0.25

2

µA

VDD Floating

—

0.15

2

µA

VDD < VSTOP

—

-5.5

-15

µA

Charge Complete

Recharge Voltage
Threshold Ratio

VRTH / VREG

Pass Transistor ON-Resistance
ON-ResistanceBattery Detection

Battery Discharge Current
Output Reverse Leakage
Current

Status Indicator – STAT
Sink Current

ISINK

—

—

25

mA

Low Output Voltage

VOL

—

0.4

1

V
mA

ISINK = 4 mA

ISOURCE——

35

High Output Voltage

VOH—

VDD-0.4

VDD - 1V

ISOURCE = 4 mA (MCP73831)

Input Leakage Current

ILK

—

0.03

1

µA

High-ImpedanceCharge Impedance
Range

RPROG

2

—

67

kΩ

Minimum Shutdown
Impedance

RPROG

70

—

200

kΩ

VPDENTER

VDD<(VBAT+20 mV)VDD<(VBAT+50 mV)—

Source Current

PROG Input

Automatic Power Down
Automatic Power Down
Entry Threshold
Note 1:

3.5V ≤ VBAT ≤ VREG
VDD Falling

Not production tested. Ensured by design.

DS20001984F-page 4

 2005-2013 Microchip Technology Inc.

MCP73831/2
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(typical) + 0.3V] to 6V, TA = -40°C to +85°C.
Typical values are at +25°C, VDD = [VREG (typical) + 1.0V]
Parameters

Sym.

Min.

Typ.

Max.

Units

Automatic Power Down
Exit Threshold

VPDEXIT—VDD<(VBAT+150 mV)

VDD<(VBAT+200 mV)

Die Temperature

TSD

—

150

—

°C

Die Temperature
Hysteresis

TSDHYS

—

10

—

°C

Conditions
3.5V ≤ VBAT ≤ VREG
VDD Rising

Thermal Shutdown

Note 1:

Not production tested. Ensured by design.

AC CHARACTERISTICSElectrical Specifications: Unless otherwise indicated, all limits apply for VDD = [VREG (typical) + 0.3V] to 12V,
TA = -40°C to +85°C. Typical values are at +25°C, VDD = [VREG (typical) + 1.0V]
Parameters

Sym.

Min.

Typ.

Max.

Units

tSTART

—

—

5

ms

VDD Low-to-High

Transition Time Out of
PreconditioningtDELAY

—

—

1

ms

VBAT < VPTH to VBAT > VPTH

Current Rise Time Out of
Preconditioning

tRISE

—

—

1

ms

IOUT Rising to 90% of IREG

Termination Comparator
Filter

tTERM

0.4

1.3

3.2

ms

Average IOUT Falling

Charge Comparator Filter

tCHARGE

0.4

1.3

3.2

ms

Average VBAT

Status Output turn-off

tOFF

—

—

200

µs

ISINK = 1 mA to 0 mA

Status Output turn-on

tON

—

—

200

µs

ISINK = 0 mA to 1 mA

UVLO Start Delay

Conditions

Constant-Current Regulation

Status Indicator

TEMPERATURE SPECIFICATIONSElectrical Specifications: Unless otherwise indicated, all limits apply for VDD = [VREG (typical) + 0.3V] to 12V.
Typical values are at +25°C, VDD = [VREG (typical) + 1.0V]
Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

TA

-40

—

+85

°C

Operating Temperature Range

TJ

-40

—

+125

°C

Storage Temperature Range

TA

-65

—

+150

°C

5-Lead, SOT-23

θJA

—

230

—

°C/W

4-Layer JC51-7 Standard
Board, Natural Convection(Note 2)8-Lead, 2 mm x 3 mm, DFN

θJA

—

76

—

°C/W

4-Layer JC51-7 Standard
Board, Natural Convection(Note 1)

Temperature Ranges
Specified Temperature Range

Thermal Package Resistances

Note 1:
2:This represents the minimum copper condition on the PCB (Printed Circuit Board).
With large copper area on the PCB, the SOT-23-5 thermal resistance (θJA) can reach a typical value of
130°C/W or better.

 2005-2013 Microchip Technology Inc.

DS20001984F-page 5

MCP73831/2
NOTES:

DS20001984F-page 6

 2005-2013 Microchip Technology Inc.

MCP73831/2
2.0

TYPICAL PERFORMANCE CURVESNote:

The graphs and tables provided following this note are a statistical summary based on a limited number ofsamples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

4.210

MCP73831-2

4.205

IOUT = 10 mA

4.200

Charge Current (mA)Battery Regulation Voltage(V)

Note: Unless otherwise indicated, VDD = [VREG(typical) + 1V], IOUT = 10 mA and TA= +25°C, Constant-Voltage mode.

4.195
4.190

IOUT = 100 mA

4.185
IOUT = 450 mA

4.180
4.175
4.170
4.50

4.75

5.00

5.25

5.50

5.75

6.00

500
450
400
350
300
250
200
150
100
50
0
2

Supply Voltage (V)

4.210

104
Charge Current (mA)

4.200

IOUT = 10 mA

4.195
4.190
4.185

IOUT = 100 mA

4.180
4.175

FIGURE 2-4:
Charge Current (IOUT) vs.
Programming Resistor (RPROG).

MCP73831-2

4.205

IOUT = 450 mA

RPROG = 10 kΩ

103
102
101
100
99
98
97
96
4.50

80

70

60

50

40

30

20

0

10

-10

-20

-30

4.170
-40

Battery Regulation Voltage (V)FIGURE 2-1:
Battery Regulation Voltage(VBAT) vs. Supply Voltage (VDD).

7 12 17 22 27 32 37 42 47 52 57 62 67
Programming Resistor (kΩ)

4.75

+85°C

0.30
0.20
0.15

5.50

516

0.40

0.25

5.25

-40°C
+25°C

0.10
0.05
0.00
3.00

3.20

3.40

3.60

3.80

4.00

4.20

Battery Regulation Voltage (V)FIGURE 2-3:
Output Leakage Current(IDISCHARGE) vs. Battery Regulation Voltage(VBAT).

 2005-2013 Microchip Technology Inc.

5.75

6.00

FIGURE 2-5:
Charge Current (IOUT) vs.
Supply Voltage (VDD).

Charge Current (mA)

Output Leakage Current (µA)

FIGURE 2-2:
Battery Regulation Voltage(VBAT) vs. Ambient Temperature (TA).

0.35

5.00

Supply Voltage (V)Ambient Temperature (°C)

RPROG = 2 kΩ

514
512
510
508
506
504
502
500
4.50

4.75

5.00

5.25

5.50

5.75

6.00

Supply Voltage (V)FIGURE 2-6:
Charge Current (IOUT) vs.
Supply Voltage (VDD).

DS20001984F-page 7

MCP73831/2
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise indicated, VDD = [VREG(typical) + 1V], IOUT = 10 mA and TA= +25°C, Constant-Voltage mode.
525

RPROG = 10 kΩ

103Charge Current (mA)

102
101
100
99
98
97

RPROG = 2 kΩ

450
375
300
225
150
75

0
-10
Attenuation (dB)

512
510
508
506
504

80

70

60

50

40

30

20

0

10

-10

-20

-30

0.1

FIGURE 2-8:
Charge Current (IOUT) vs.
Ambient Temperature (TA).

0-10Attenuation (dB)

90
75
60
45
30

155

145

135

125

115

105

95

85

75

155

145

135

125

-40

-60
0.01

65

115

-30

-50

55

1000

-20

0
45

100

VAC = 100 mVp-p
IOUT = 100 mA
COUT = 4.7 µF, X7R Ceramic

15
35

10

FIGURE 2-11:
Power Supply Ripple
Rejection (PSRR).

RPROG = 10 kΩ

25

1Frequency (kHz)Ambient Temperature (°C)

Charge Current (mA)

95

-40

-60
0.01

Junction Temperature (°C)

FIGURE 2-9:
Charge Current (IOUT) vs.
Junction Temperature (TJ).

DS20001984F-page 8

105

-30

500

105

85

-20

-50

120

75

VAC = 100 mVp-p
IOUT = 10 mA
COUT = 4.7 µF, X7R Ceramic

502
-40

Charge Current (mA)

FIGURE 2-10:
Charge Current (IOUT) vs.
Junction Temperature (TJ).

RPROG = 2 kΩ

514

65

Junction Temperature (°C)

FIGURE 2-7:
Charge Current (IOUT) vs.
Ambient Temperature (TA).
516

55

25

80

70

60

50

40

30

20

0

10

-10

-20

-30

-40

Ambient Temperature (°C)

45

0

96

35

Charge Current (mA)

104

0.1

1

10

100

1000

Frequency (kHz)FIGURE 2-12:
Power Supply Ripple
Rejection (PSRR).

 2005-2013 Microchip Technology Inc.

MCP73831/2
TYPICAL PERFORMANCE CURVES (CONTINUED)

1.40

0.10

0.05

1.20

0.05

10

0.00

1.00

0.00

8

-0.05

0.80

-0.05

6

-0.10

0.60

-0.10

4

-0.15

0.40

-0.15

2

-0.20

0.20

-0.20

0

200

180

160

-0.08
-0.10

COUT = 4.7 µF, X7R Ceramic

200

180

160

140

120

100

80

60

40

20

-0.12
0

-0.05

Time (µs)

FIGURE 2-15:

Load Transient Response.

 2005-2013 Microchip Technology Inc.

200

180

160

140

120

80

300

2.0

200
MCP73831-2AC/IOT
VDD = 5.2V
RPROG = 2 kΩ

1.0

100

0.0

Charge Current (mA)

0.05

3.0

0
240

-0.06

210

-0.04

0.10

180

0.15

400

150

-0.02

500

4.0

120

0.20

5.0

60

0.00

600

30

0.25

6.0

0

0.02

FIGURE 2-17:
Complete Charge Cycle(180 mAh Li-Ion Battery).

Battery Voltage (V)

0.04

0.30

Output Ripple (V)Output Current (A)Line Transient Response.

90

120

100

80

60

40

20

140

Time (minutes)

0.35

0.00

20
0

Time (µs)

FIGURE 2-14:

40

MCP73831-2AC/IOT
VDD = 5.2V
RPROG = 10 kΩ

1.0
0.0

-0.30
0

-2

2.0

Charge Current (mA)

-0.25

60

180

-0.20

IOUT = 100 mA
COUT = 4.7 µF, X7R Ceramic

3.0

160

-0.15

140

-0.10

4

80

120

6

4.0

100

-0.05

80

8

100

60

0.00

120

5.0

40

10

Load Transient Response.

6.0

20

0.05

FIGURE 2-16:

Battery Voltage (V)0.10
Output Ripple (V)Source Voltage (V)Line Transient Response.

12

0

-0.30

Time (µs)

14

2

100

40

0

Time (µs)

FIGURE 2-13:-0.25

COUT = 4.7 µF, X7R Ceramic

-0.20

200

180

160

140

120

80

100

60

40

20

-0.30
0

-2

0.00

60

-0.25

20

IOUT = 10 mA
COUT = 4.7 µF, X7R Ceramic0

Output Ripple (V)

0.10

12

Output Current (A)14

Output Ripple (V)Source Voltage (V)Note: Unless otherwise indicated, VDD = [VREG(typical) + 1V], IOUT = 10 mA and TA= +25°C, Constant-Voltage mode.

Time (minutes)

FIGURE 2-18:
Complete Charge Cycle(1000 mAh Li-Ion Battery).

DS20001984F-page 9

MCP73831/2
NOTES:

DS20001984F-page 10

 2005-2013 Microchip Technology Inc.

MCP73831/2
3.0

PIN DESCRIPTION

The descriptions of the pins are listed in Table 3-1.

TABLE 3-1:

PIN FUNCTION TABLES

Pin No.
DFN

3.1

SOT-23-5

SymbolFunction

1

4

VDD

Battery Management Input Supply

2

—

VDD

Battery Management Input Supply

3

3

VBAT

Battery Charge Control Output

4

—

VBAT

Battery Charge Control Output

5

1

STAT

Charge Status Output

6

2

VSS

Battery Management 0V Reference

7

—

NC

No Connection

8

5

PROG

Current Regulation Set and Charge Control Enable

9

—

EP

Exposed Thermal Pad (EP); must be connected to VSS.

Battery Management Input Supply(VDD)

A supply voltage of [VREG (typical) + 0.3V] to 6V isrecommended. Bypass to VSS with a minimum of
4.7 µF.

3.2

Battery Charge Control Output(VBAT)

3.4

Battery Management 0V Reference(VSS)

Connect to negative terminal of battery and input
supply.

3.5

Current Regulation Set (PROG)

Preconditioning, fast charge and termination currents
are scaled by placing a resistor from PROG to VSS.

Connect to positive terminal of battery. Drain terminalof internal P-channel MOSFET pass transistor. Bypass
to VSS with a minimum of 4.7 µF to ensure loop stability
when the battery is disconnected.

The charge management controller can be disabled byallowing the PROG input to float.

3.3

An internal electrical connection exists between the
Exposed Thermal Pad (EP) and the VSS pin. They must
be connected to the same potential on the Printed
Circuit Board (PCB).

Charge Status Output (STAT)STAT is an output for connection to an LED for charge
status indication. Alternatively, a pull-up resistor can beapplied for interfacing to a host microcontroller.
STAT is a tri-state logic output on the MCP73831 andan open-drain output on the MCP73832.

 2005-2013 Microchip Technology Inc.

3.6

Exposed Thermal Pad (EP)For better thermal performance, it is recommended to
add vias from the land area of EP to a copper layer on
the other side of the PCB.

DS20001984F-page 11

MCP73831/2
NOTES:

DS20001984F-page 12

 2005-2013 Microchip Technology Inc.

MCP73831/2
4.0

DEVICE OVERVIEW

The MCP73831/2 are highly advanced linear charge
management controllers. Figure 4-1 depicts theoperational flow algorithm from charge initiation tocompletion and automatic recharge.

The UVLO circuit is always active. Whenever the input
supply is below the UVLO threshold or within +50 mVof the voltage at the VBAT pin, the MCP73831/2 areplaced in Shutdown mode.

SHUTDOWN MODE
VDD < VUVLO
VDD < VBATorPROG > 200 kΩ
STAT = Hi-Z

During any UVLO condition, the battery reverse
discharge current is less than 2 µA.

VBAT < VPTH
PRECONDITIONING
MODE
Charge Current = IPREGSTAT = LOWVBAT > VPTHFAST CHARGE
MODE
Charge Current = IREGSTAT = LOWVBAT > VPTHVBAT < VRTHVBAT = VREGCONSTANT VOLTAGE
MODE
Charge Voltage = VREGSTAT = LOWIBAT < ITERMCHARGE COMPLETE
MODE
No Charge Current
STAT = HIGH (MCP73831)
STAT = Hi-Z (MCP73832)

FIGURE 4-1:

4.1

Flowchart.

Undervoltage Lockout (UVLO)

An internal UVLO circuit monitors the input voltage andkeeps the charger in Shutdown mode until the input
supply rises above the UVLO threshold. The UVLO
circuitry has a built in hysteresis of 100 mV.
In the event a battery is present when the input power
is applied, the input supply must rise to a level 150 mV
above the battery voltage before the MCP73831/2
become operational.

 2005-2013 Microchip Technology Inc.

The UVLO circuit places the device in Shutdown mode
if the input supply falls to within +50 mV of the battery
voltage. Again, the input supply must rise to a level
150 mV above the battery voltage before the
MCP73831/2 become operational.

4.2

Battery Detection

A 6 µA (typical) current is sourced by the VBAT pin to
determine if a battery is present or not. If the voltage at
VBAT rises to VREG + 100 mV (typical), the device
assumes that a battery is not present. If the voltage
stays below VREG + 100 mV (typical), the device
assumes that a battery is detected. In order to correctly
detect a battery insertion, the impedance seen by the
VBAT pin before the battery is connected must be
greater than 2 MΩ.

4.3

Charge Qualification

For a charge cycle to begin, all UVLO conditions must
be met and a battery or output load must be present. A
charge current programming resistor must beconnected from PROG to VSS. If the PROG pin is open
or floating, the MCP73831/2 are disabled and thebattery reverse discharge current is less than 2 µA. In
this manner, the PROG pin acts as a charge enable
and can be used as a manual shutdown.

4.4

Preconditioning

If the voltage at the VBAT pin is less than thepreconditioning threshold, the MCP73831/2 enter apreconditioning or Trickle Charge mode. The
preconditioning threshold is factory set. Refer to
Section 1.0“Electrical
Characteristics”
forpreconditioning threshold options and the Product
Identification System for standard options.
In this mode, the MCP73831/2 supply a percentage ofthe charge current (established with the value of theresistor connected to the PROG pin) to the battery. The
percentage or ratio of the current is factory set. Refer to
Section 1.0“Electrical
Characteristics”
forpreconditioning current options and the Product Identification System for standard options.
When the voltage at the VBAT pin rises above thepreconditioning threshold, the MCP73831/2 enter theConstant-Current or Fast Charge mode.

DS20001984F-page 13

MCP73831/2

300
225
150
75
155

145

135

125

115

95

105

85

0

Charge Termination

The charge cycle is terminated when, during ConstantVoltage mode, the average charge current diminishes
below a percentage of the programmed charge current(established with the value of the resistor connected to
the PROG pin). A 1 ms filter time on the terminationcomparator ensures that transient load conditions do
not result in premature charge cycle termination. The
percentage or ratio of the current is factory set. Refer to
Section 1.0 “Electrical Characteristics” for charge
termination current options and the Product
Identification System for standard options.

375

75

4.7

RPROG = 2 kΩ

450

65

When the voltage at the VBAT pin reaches theregulation voltage, VREG, constant voltage regulation
begins. The regulation voltage is factory set to 4.2V,
4.35V, 4.40V or 4.50V with a tolerance of ±0.75%.

525

55

Constant-Voltage Mode

The MCP73831/2 limit the charge current based on thedie temperature. The thermal regulation optimizes the
charge cycle time while maintaining device reliability.
Figure 4-2 depicts the thermal regulation for the
MCP73831/2.

25

4.6

Thermal Regulation

45

During the Constant-Current mode, the programmed
charge current is supplied to the battery or load. The
charge current is established using a single resistor
from PROG to VSS. Constant-Current mode ismaintained until the voltage at the VBAT pin reaches theregulation voltage, VREG.

4.9

35

Fast Charge Constant-Current
Mode

Charge Current (mA)

4.5

Junction Temperature (°C)

FIGURE 4-2:

4.10

Thermal Regulation.

Thermal Shutdown

The MCP73831/2 suspend charge if the die temperature exceeds 150°C. Charging will resume when thedie temperature has cooled by approximately 10°C.

The charge current is latched off and the MCP73831/2
enter a Charge Complete mode.

4.8

Automatic Recharge

The MCP73831/2 continuously monitor the voltage at
the VBAT pin in the Charge Complete mode. If thevoltage drops below the recharge threshold, anothercharge cycle begins and current is once again supplied
to the battery or load. The recharge threshold is factory
set. Refer to Section 1.0 “Electrical Characteristics”
for recharge threshold options and the Product
Identification System for standard options.

DS20001984F-page 14

 2005-2013 Microchip Technology Inc.

MCP73831/2
5.0

DETAILED DESCRIPTION

5.2

5.1

Analog Circuitry

5.2.1

5.1.1

BATTERY MANAGEMENT INPUT
SUPPLY (VDD)

The VDD pin is the input supply pin for the MCP73831/
2 devices. The MCP73831/2 automatically enter aPower-Down mode if the voltage on the VDD input falls
below the UVLO voltage (VSTOP). This feature prevents
draining the battery pack when the VDD supply is notpresent.

5.1.2

CURRENT REGULATION SET(PROG)

Fast charge current regulation can be scaled by placing
a programming resistor (RPROG) from the PROG input
to VSS. The program resistor and the charge current
are calculated using the following equation:
1000V
I REG = ----------------R PROG
Where:
RPROG

=

kOhms

IREG

=

milliampere

The preconditioning trickle charge current and thecharge termination current are ratiometric to the fast
charge current based on the selected device options.

5.1.3

BATTERY CHARGE CONTROLOUTPUT (VBAT)The battery charge control output is the drain terminalof an internal P-channel MOSFET. The MCP73831/2
provide constant current and voltage regulation to thebattery pack by controlling this MOSFET in the linear
region. The battery charge control output should beconnected to the positive terminal of the battery pack.

 2005-2013 Microchip Technology Inc.

Digital Circuitry
STATUS INDICATOR (STAT)

The charge status output of the MCP73831 has threedifferent states: High (H), Low (L), and HighImpedance (Hi-Z). The charge status output of the
MCP73832 is open-drain. It has two different states:
Low (L) and High-Impedance (Hi-Z). The charge status
output can be used to illuminate one, two or tri-color
LEDs. Optionally, the charge status output can be used
as an interface to a host microcontroller.
Table 5-1 summarizes the state of the status output
during a charge cycle.

TABLE 5-1:

STATUS OUTPUT

Charge Cycle StateSTAT1
MCP73831 MCP73832

Shutdown

Hi-Z

Hi-Z

No Battery Present

Hi-Z

Hi-Z

Preconditioning

L

L

Constant-Current Fast
ChargeL

L

Constant Voltage

L

L

Charge Complete –Standby

H

Hi-Z

5.2.2

DEVICE DISABLE (PROG)

The current regulation set input pin (PROG) can beused to terminate a charge at any time during thecharge cycle, as well as to initiate a charge cycle orinitiate a recharge cycle.
Placing a programming resistor from the PROG input to
VSS enables the device. Allowing the PROG input tofloat or by applying a logic-high input signal, disables
the device and terminates a charge cycle. Whendisabled, the device’s supply current is reduced to
25 µA, typically.

DS20001984F-page 15

MCP73831/2
NOTES:

DS20001984F-page 16

 2005-2013 Microchip Technology Inc.

MCP73831/2
6.0

APPLICATIONS

followed by a constant voltage charging method.
Figure 6-1 depicts a typical stand-alone application
circuit, while Figure 6-2 and Figure 6-3 depict theaccompanying charge profile.

The MCP73831/2 are designed to operate inconjunction with a host microcontroller or in a standalone application. The MCP73831/2 provide thepreferred charge algorithm for Lithium-Ion and LithiumPolymer cells. The algorithm uses a constant current

Li-Ion Battery Charger
4
CIN

RLED

REGULATEDWALL CUBE

VDD

VBAT

STAT

PROG

3
COUT
5

LED
1

VSS

+ Single
Li-Ion- Cell

RPROG

2

MCP73831

120

6.0

600

5.0

100

5.0

500

4.0

80

4.0

400

3.0

60

3.0

300

2.0

40

Time (minutes)

FIGURE 6-2:
Typical Charge Profile(180 mAh Battery).

6.1

240

210

180

150

120

90

0

Time (minutes)

FIGURE 6-3:
Typical Charge Profile in
Thermal Regulation (1000 mAh Battery).

Application Circuit Design

Due to the low efficiency of linear charging, the mostimportant factors are thermal design and cost, which
are a direct function of the input voltage, output current
and thermal impedance between the battery charger
and the ambient cooling air. The worst-case situation iswhen the device has transitioned from thePreconditioning mode to the Constant-Current mode.
In this situation, the battery charger has to dissipate themaximum power. A trade-off must be made between
the charge current, cost and thermal requirements ofthe charger.

6.1.1

100

0.0

180

160

140

120

100

80

60

40

20

0
0

0.0

1.0

60

20

200
MCP73831-2AC/IOT
VDD = 5.2V
RPROG = 2 kΩ

30

1.0

2.0

0

MCP73831-2AC/IOT
VDD = 5.2V
RPROG = 10 kΩ

Battery Voltage (V)6.0

Charge Current (mA)

Typical Application Circuit.

Charge Current (mA)Battery Voltage (V)FIGURE 6-1:

6.1.1.1

Current Programming Resistor(RPROG)The preferred fast charge current for Lithium-Ion cells
is at the 1C rate, with an absolute maximum current at
the 2C rate. For example, a 500 mAh battery pack has
a preferred fast charge current of 500 mA. Charging at
this rate provides the shortest charge cycle times
without degradation to the battery pack performance or
life.

COMPONENT SELECTION

Selection of the external components in Figure 6-1 iscrucial to the integrity and reliability of the charging
system. The following discussion is intended as a guidefor the component selection process.

 2005-2013 Microchip Technology Inc.

DS20001984F-page 17

MCP73831/2
6.1.1.2

Thermal Considerations

6.1.1.5

The worst-case power dissipation in the battery
charger occurs when the input voltage is at the
maximum and the device has transitioned from thePreconditioning mode to the Constant-Current mode.
In this case, the power dissipation is:PowerDissipation = ( V

DDMAX

–V

PTHMIN)×I

REGMAX

Where:VDDMAX=

the maximum input voltage

IREGMAX=the maximum fast charge current

VPTHMIN=the minimum transition thresholdvoltagePower dissipation with a 5V, ±10% input voltage sourceis:PowerDissipation = ( 5.5V – 2.7V ) × 550mA = 1.54W

This power dissipation with the battery charger in the
SOT-23-5 package will cause thermal regulation to beentered as depicted in Figure 6-3. Alternatively, the
2mm x 3mm DFN package could be utilized to reduce
charge cycle times.

6.1.1.3

External Capacitors

The MCP73831/2 are stable with or without a batteryload. In order to maintain good AC stability in theConstant-Voltage mode, a minimum capacitance of
4.7 µF is recommended to bypass the VBAT pin to VSS.
This capacitance provides compensation when there isno battery load. In addition, the battery andinterconnections appear inductive at high frequencies.
These elements are in the control feedback loop during
Constant-Voltage mode. Therefore, the bypass
capacitance may be necessary to compensate for the
inductive nature of the battery pack.
Virtually any good quality output filter capacitor can beused, independent of the capacitor’s minimum
Effective Series Resistance (ESR) value. The actual
value of the capacitor (and its associated ESR)
depends on the output load current. A 4.7 µF ceramic,
tantalum or aluminum electrolytic capacitor at theoutput is usually sufficient to ensure stability for output
currents up to a 500 mA.

6.1.1.4

Reverse-Blocking Protection

The MCP73831/2 provide protection from a faulted or
shorted input. Without the protection, a faulted or
shorted input would discharge the battery pack throughthe body diode of the internal pass transistor.

DS20001984F-page 18

Charge Inhibit

The current regulation set input pin (PROG) can beused to terminate a charge at any time during thecharge cycle, as well as to initiate a charge cycle orinitiate a recharge cycle.
Placing a programming resistor from the PROG input to
VSS enables the device. Allowing the PROG input tofloat or by applying a logic-high input signal, disables
the device and terminates a charge cycle. Whendisabled, the device’s supply current is reduced to
25 µA, typically.

6.1.1.6

Charge Status Interface

A status output provides information on the state ofcharge. The output can be used to illuminate external
LEDs or interface to a host microcontroller. Refer toTable 5-1 for a summary of the state of the status
output during a charge cycle.

6.2

PCB Layout Issues

For optimum voltage regulation, place the battery packas close as possible to the device’s VBAT and VSS pins.
This is recommended to minimize voltage drops along
the high current-carrying PCB traces.
If the PCB layout is used as a heatsink, adding many
vias in the heatsink pad can help conduct more heat tothe PCB backplane, thus reducing the maximum
junction temperature. Figure 6-4 and Figure 6-5 depict
a typical layout with PCB heatsinking.
RLED LEDVSS

VBATFIGURE 6-4:

RPROG

COUT MCP73831 C
IN

VDD

Typical Layout (Top).

VSS

VBAT

FIGURE 6-5:

VDD

Typical Layout (Bottom).

 2005-2013 Microchip Technology Inc.

MCP73831/2
7.0

PACKAGING INFORMATION

7.1

Package Marking Information
8-Lead DFN (2x3x0.9 mm)

DeviceCode

MCP73831T-2ACI/MCAAE

MCP73831T-2ATI/MC

AAF

MCP73831T-2DCI/MCAAG

MCP73831T-3ACI/MCAAH

MCP73831T-4ADI/MCAAJ

MCP73831T-5ACI/MCAAK

MCP73832T-2ACI/MCAAL

MCP73832T-2ATI/MC

AAM

MCP73832T-2DCI/MCAAP

MCP73832T-3ACI/MCAAQ

MCP73832T-4ADI/MCAAR

MCP73832T-5ACI/MCAAS

Example

AAE
739
25

Note: Applies to 8-Lead DFN

5-Lead SOT-23

XXNN

DeviceCode

MCP73831T-2ACI/OTKDNN

MCP73831T-2ATI/OT

KENN

MCP73831T-2DCI/OTKFNN

MCP73831T-3ACI/OT

KGNN

MCP73831T-4ADI/OTKHNN

MCP73831T-5ACI/OTKJNN

MCP73832T-2ACI/OTKKNN

MCP73832T-2ATI/OTKLNN

MCP73832T-2DCI/OT

KMNN

MCP73832T-3ACI/OTKPNN

MCP73832T-4ADI/OTKQNN

MCP73832T-5ACI/OTKRNN

MCP73832T-2DFI/OT

LUNN

ExampleKD25

Note: Applies to 5-Lead SOT-23

Legend: XX...X
Y
YY
WW
NNN

e3

*
Note:

Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability codePb-free Compliant JEDEC designator for Matte Tin (Sn)This package is Pb-free. The Pb-free JEDEC designator ( e3 )can be found on the outer packaging for this package.

In the event the full Microchip part number cannot be marked on one line, it will be carried overto the next line, thus limiting the number of available characters for customer-specificinformation.

 2005-2013 Microchip Technology Inc.

DS20001984F-page 19

MCP73831/2
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     ) 0 +0DS20001984F-page 20

 2005-2013 Microchip Technology Inc.

MCP73831/2
Note:

For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging

 2005-2013 Microchip Technology Inc.

DS20001984F-page 21

MCP73831/2
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DS20001984F-page 22

 2005-2013 Microchip Technology Inc.

MCP73831/2
Note:

For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging

 2005-2013 Microchip Technology Inc.

DS20001984F-page 23

MCP73831/2
NOTES:

DS20001984F-page 24

 2005-2013 Microchip Technology Inc.

MCP73831/2
APPENDIX A:REVISION HISTORY

Revision F (June 2013)
The following is the list of modifications:
1.
2.

3.
4.

Updated the Functional Block Diagram.
Added the Battery Detection parameter andrelated information in the DC Characteristics
table.
Added new section Section 4.2 “Battery
Detection”.
Minor grammatical and spelling corrections.

Revision E (September 2008)
The following is the list of modifications:
1.
2.

3.
4.
5.

6.
7.
8.

Package Types: Changed DFN pinout diagram.
Section 1.0 “Electrical Characteristics”:
Changed “Charge Impedance Range from20 kΩ to 67 kΩ.
Section 1.0 “Electrical Characteristics”:
Misc. Formatting changes.
Section 2.0 “Typical Performance Curves”:
Updated Figure 2-4.
Section 3.0“Pin
Description”:
Added
Exposed Pad pin to table and added
Section 3.6 “Exposed Thermal Pad (EP)”.
Updated Appendix A: “Revision History”
Added Land Pattern Package Outline Drawing
for 2x3 DFN package.
Pagination fixes throughout document per
MarCom Standards.

Revision D (April 2008)
The following is the list of modifications:
1.

Changed Charge Termination Current Ratio to
8.5% minimum and 11.5% maximum.

Revision C (October 2007)
The following is the list of modifications:
1.
2.
3.

Numerous edits throughout document.
Added note to Temperature Specifications
table.
Updated Figure 2-4.

Revision B (March 2006)
The following is the list of modifications:1.

Added MCP73832 through document.

Revision A (November 2005)• Original Release of this Document.

 2005-2013 Microchip Technology Inc.

DS20001984F-page 25

MCP73831/2
NOTES:

DS20001984F-page 26

 2005-2013 Microchip Technology Inc.

MCP73831/2
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

PART NO.

X

XX

Examples: *

/XX

X

a)

DeviceVREG

Options Temperature Package
Range

b)
c)

Device:

MCP73831:
MCP73831T:

Single-Cell Charge Controller
Single-Cell Charge Controller(Tape and Reel)
Single-Cell Charge Controller
Single-Cell Charge Controller(Tape and Reel)

MCP73832
MCP73832T:

Regulation
Voltage:

Code

VREG

2
3
4
5

4.20V
4.35V
4.40V
4.50V

=
=
=
=

d)
a)
b)
c)
d)
a)
b)

Options: *Code

IPREG/IREG

VPTH/VREG

ITERM/IREG

VRTH/VREG

AC
AD
AT
DC

10
10
10
100

66.5
66.5
71.5
x

7.5
7.5
20
7.5

96.5
94
94
96.5

* Consult Factory for Alternative Device Options

c)
d)
a)
b)

Temperature
Range:

I

Package:MC
OT= -40°C to +85°C (Industrial)c)= Dual-Flat, No-Lead (2x3 mm body), 8-Lead= Small Outline Transistor (SOT23), 5-Lead

d)
a)
b)
c)
d)
a)
b)
c)
d)

MCP73831-2ACI/OT: 4.20V VREG,
Options AC, 5LD SOT23 Pkg
MCP73831T-2ACI/OT: Tape and Reel,
4.20V VREG, Options AC, 5LD SOT23 Pkg
MCP73832-2ACI/MC: 4.20V VREG,
Options AC, 8LD DFN Package
MCP73832T-2ACI/MC: Tape and Reel,
4.20V VREG, Options AC, 8LD DFN Package
MCP73831-2ATI/OT: 4.20V VREG,
Options AT, 5LD SOT23 Pkg
MCP73831T-2ATI/OT: Tape and Reel,
4.20V VREG, Options AT, 5LD SOT23 Pkg
MCP73832-2ATI/MC: 4.20V VREG,
Options AT, 8LD DFN Package
MCP73832T-2ATI/MC: Tape and Reel,
4.20V VREG, Options AT, 8LD DFN Package
MCP73831-2DCI/OT: 4.20V VREG,
Options DC, 5LD SOT23 Pkg
MCP73831T-2DCI/OT: Tape and Reel,
4.20V VREG, Options DC, 5LD SOT23 Pkg
MCP73832-2DCI/MC: 4.20V VREG,
Options DC, 8LD DFN Package
MCP73832T-2DCI/MC: Tape and Reel,
4.20V VREG, Options DC, 8LD DFN Package
MCP73831-3ACI/OT: 4.35V VREG,
Options AC, 5LD SOT23 Pkg
MCP73831T-3ACI/OT: Tape and Reel,
4.35V VREG, Options AC, 5LD SOT23 Pkg
MCP73832-3ACI/MC: 4.35V VREG,
Options AC, 8LD DFN Package
MCP73832T-3ACI/MC: Tape and Reel,
4.35V VREG, Options AC, 8LD DFN Package
MCP73831-4ADI/OT: 4.40V VREG,
Options AD, 5LD SOT23 Pkg
MCP73831T-4ADI/OT: Tape and Reel,
4.40V VREG, Options AD, 5LD SOT23 Pkg
MCP73832-4ADI/MC: 4.40V VREG,
Options AD, 8LD DFN Package
MCP73832T-4ADI/MC: Tape and Reel,
4.40V VREG, Options AD, 8LD DFN Package
MCP73831-5ACI/OT: 4.50V VREG,
Options AC, 5LD SOT23 Pkg
MCP73831T-5ACI/OT: Tape and Reel,
4.50V VREG, Options AC, 5LD SOT23 Pkg
MCP73832-5ACI/MC: 4.50V VREG,
Options AC, 8LD DFN Package
MCP73832T-5ACI/MC: Tape and Reel,
4.50V VREG, Options AC, 8LD DFN Package* Consult Factory for Alternate Device Options

 2005-2013 Microchip Technology Inc.

DS20001984F-page 27

MCP73831/2
NOTES:

DS20001984F-page 28

 2005-2013 Microchip Technology Inc.

Note the following details of the code protection feature on Microchip devices:•

Microchip products meet the specification contained in their particular Microchip Data Sheet.

•

Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in theintended manner and under normal conditions.

•

There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to ourknowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

•

Microchip is willing to work with the customer who is concerned about the integrity of their code.

•

Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does notmean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such actsallow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Information contained in this publication regarding device
applications and the like is provided only for your convenienceand may be superseded by updates. It is your responsibility toensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely atthe buyer’s risk, and the buyer agrees to defend, indemnify andhold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses areconveyed, implicitly or otherwise, under any Microchip
intellectual property rights.

Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlashand UNI/O are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark ofMicrochip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II GmbH & Co. & KG, a subsidiary ofMicrochip Technology Inc., in other countries.
All other trademarks mentioned herein are property of theirrespective companies.
© 2005-2013, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-62077-260-7

QUALITY MANAGEMENT SYSTEMCERTIFIED BY DNV== ISO/TS 16949 == 2005-2013 Microchip Technology Inc.

Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler andTempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and proceduresare for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory andanalog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.

DS20001984F-page 29

Worldwide Sales and Service
AMERICAS

ASIA/PACIFIC

ASIA/PACIFICEUROPE

Corporate Office2355 West Chandler Blvd.
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Tel: 480-792-7200
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Technical Support:
http://www.microchip.com/
supportWeb Address:www.microchip.com

Asia Pacific Office
Suites 3707-14, 37th Floor
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Tel: 852-2401-1200
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Tel: 91-80-3090-4444
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Tel: 91-11-4160-8631
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Tel: 43-7242-2244-39
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Tel: 91-20-2566-1512
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Tel: 61-2-9868-6733
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Taiwan - Taipei
Tel: 886-2-2508-8600
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Fax: 86-29-8833-7256

Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350

UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820

China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049

DS20001984F-page 30

Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781

Japan - Tokyo
Tel: 81-3-6880- 3770
Fax: 81-3-6880-3771

11/29/12

 2005-2013 Microchip Technology Inc.