第 61 回
フラーレン・ナノチューブ・グラフェン
総合シンポジウム
The 61st Fullerenes-Nanotubes-Graphene
General Symposium

講演要旨集
Abstracts
2021 年 9 月 1 日（水） ～ 3 日（金）オンラインバーチャルシンポジウム
Online Virtual Symposium
主催 フラーレン・ナノチューブ・グラフェン学会
The Fullerenes, Nanotubes and Graphene Research Society
共催 ・ 後援
日本化学会

The Chemical Society of Japan

協賛
日本物理学会
応用物理学会
高分子学会
電気化学会

The Physical Society of JapanThe Japan Society of Applied Physics
The Society of Polymer Science, JapanThe Electrochemical Society of Japan

振動解析、強度解析、熱流体解析や、それらのシミュレーションを高速化するには、プロセッサーの性能を最大限に引き出すように開発する必要があります。
「インテル® oneAPI ベース & HPC ツールキット」は、多様なアーキテクチャーに対応するコンパイラー、
最適化済みライブラリー、性能解析ツール、デバッガーなどを含む最新のツールスイートで、インテルの CPU、
GPU、FPGA を含む、最新のプロセッサーの性能を最大限に引き出すアプリケーションの開発を強力に支援します。インテル® Parallel Studio XE で開発したコードも活用できます。
■ CPU、GPU、FPGA で共通のプログラミング■ 高速化の可能性と効果を検証

現在の標準 C++ と Khronos SYCL* に拡張機能を加えた標準ベースのクロスアーキテクチャー言語、データ並列 C++(DPC++) により、これまでの C/C++ プログラムから始めて、インテルの CPU、GPU、FPGA 向けに効率よく動作させることが可能なプログラムを作成できます。

さまざまな性能解析 / デバッグツールにより、関数ごとの処理時間や、時系列の CPU と GPU、メモリー帯域幅の利用率など、調整個所の特定や対応方法の検討に役立つ情報が得られます。

DPC++ 対応のインテル® oneAPI DPC++/C++ コンパイラー、
OpenMP* ディレクティブによるオフロード機能でインテルの GPU を利用可能なベータ版インテル® Fortran コンパイ
ラーに加えて、従来のインテル® C++/Fortran コンパイラーも含まれます。
すでに CUDA* で記述されたコードがある場合は、DPC++への移行を支援するツールを利用できます。
対応ハードウェアがない場合も、インテルの開発サンドボッ
クス 環 境、oneAPI 向 けイン テル® DevCloud (devcloud.
intel.com/oneapi) (英語) を利用してインテルの GPU および
FPGA 向けの開発をすぐに試せます。

インテル® Advisor で現在のプログラムの動作を分析し、代わりに GPU を演算に使う場合に予想される高速化について表示「将来の高度なコンピューティングには、エクサスケール・クラスのワークロードに必要な演算能力を最大化するヘテロジ
ニアス・ハードウェアが必要です。インテルが主導している oneAPI 業界イニシアチブにより、多様な計算アーキテクチャーにおけるプログラミングは大幅に簡素化されるでしょう。
」
アルゴンヌ国立研究所 計算機科学、環境科学、ライフサイエンス アソシエイト・ラボラトリー・ディレクター
シカゴ大学 コンピューター・サイエンス教授
Rick Stevens 博士

製品詳細、評価利用はこちらから

www.xlsoft.com/intel/fntg

高速化のための無料セミナー実施中

www.xlsoft.com/intel/seminar

製品の詳細に関するお問い合わせ先 :Tel: 03-5440-7875 Fax: 03-5440-7876 E-mail: intel@xlsoft.com
お問い合わせフォーム : www.xlsoft.com/jp/qa
Intel、インテル、Intel ロゴ、その他のインテルの名称やロゴは、Intel Corporation またはその子会社の商標です。
性能は、使用状況、構成、その他の要因によって異なります。詳細については、http://www.intel.com/PerformanceIndex/ (英語) を参照してください。
© 2021 Intel Corporation. 無断での引用、転載を禁じます。XLsoft のロゴ、XLsoft は XLsoft Corporation の商標です。Copyright © 2021 XLsoft Corporation.

Abstract of
The 61 Fullerenes-Nanotubes-Graphene General SymposiumstSponsored by: The Fullerenes, Nanotubes and Graphene Research Society
Co-Sponsored by: The Chemical Society of Japan
Supported by: The Physical Society of JapanThe Japan Society of Applied Physics
The Society of Polymer Science, JapanThe Electrochemical Society of Japan

Date: September 1st (Wed.) –3rd (Fri.), 2021
Place: Online Virtual Symposium
Presentation Time: Special Lecture(25 min presentation + 5 min discussion)
Invited Lecture (15 min presentation + 5 min discussion)
General Lecture (10 min presentation + 5 min discussion)
Poster Preview (1 min presentation without discussion)

第 61 回フラーレン･ナノチューブ･グラフェン総合シンポジウム
講演要旨集
主催： フラーレン･ナノチューブ･グラフェン学会
共催･後援： 日本化学会
協賛: 日本物理学会、応用物理学会、高分子学会、電気化学会
日時: 2021 年 9 月 1 日(水) ～ 9 月 3 日(金)場所: オンラインバーチャルシンポジウム
発表時間: 特別講演 （発表 25 分 + 質疑応答 5 分）

招待講演 （発表 15 分 + 質疑応答 5 分）
一般講演 （発表 10 分 + 質疑応答 5 分）
ポスタープレビュー （発表 1 分・質疑応答 なし）

展示団体御芳名 (五十音順、 敬称略）
santec（株）
テレダイン・ジャパン（株）（株）日本レーザー

広告掲載団体御芳名 (五十音順、 敬称略）
アイクストロン（株）
エクセルソフト（株）(株）セントラル科学貿易
テレダイン・ジャパン（株）
日本電子（株）(株）日本レーザー
フィルジェン(株）Contents
Timetable .........................................................................

i

Chairpersons ....................................................................

ii

Program............................................................................

iii

Abstracts
Special Lecture ...........................................................

1

Invited Lecture ...........................................................

13

General Lecture ..........................................................

17

Poster ..........................................................................

45

Author Index .................................................................... 133

目 次
早見表 .............................................................................

i

座長一覧 .........................................................................

ii

プログラム ........................................................................

iii

講演予稿
特別講演 ....................................................................

1

招待講演 ....................................................................

13

一般講演 ....................................................................

17

ポスター発表 ..............................................................

45

発表者索引 ..................................................................... 133

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Sep. 1 (Wed)09:00~09:05

Opening

09:05~09:50

Poster preview I
1P-1 ~ 1P-29

09:50~11:35

Poster session I
1P-1 ~ 1P-29
9:50~ Odd number posters
10:45~ Even number posters☆: Candidates for the Young Scientist Poster Award

Carbon nanotubes: Applications☆1P-1

Fabrication and hierarchical structure control of carbon nanotube electron
field emitter for X-ray tube
*Kotaro Yasui, Hisashi Sugime, Hayato Ochi, Yuichi Nishikiori, Suguru
Noda

45

Carbon nanotubes: Electronic structure☆1P-2

Fabrication of nanostructures incorporating carbon nanotubes andone-dimensional confinement of charged excitons*Haruna Nakajima, Taiki Inoue, Shohei Chiashi, Shigeo Maruyama,
Keiji Ueno, Kenji Watanabe, Takashi Taniguchi, Ryo Kitaura

46

Carbon nanotubes: Optical property☆1P-3

Efficient and Narrow-Linewidth Photoluminescence Devices Based onSingle-Walled Carbon Nanotubes and Silicon Photonics*Ryohei Imafuku, Naoto Higuchi, Hiroto Niiyama, Kenta Nakagawa,
Hideyuki Maki

47

Carbon nanotubes: Others☆1P-4

Machine learning assisted control of nanocarbon dispersion for optimal
material and process design of electronics*Shun Muroga, Ying Zhou, Takeo Yamada, Toshiya Okazaki, Kenji Hata
iii

48

Carbon nanotubes: Transport property☆1P-5

Air-Stable n-type of Single-Walled Carbon Nanotubes by Organic Boron
Compounds*Aoi Hamasuna, Naoki Tanaka, Tsuyohiko Fujigaya

49

Fullerenes: Chemistry☆1P-6

Systematic structural study of cation-ordered pentavalent fullerides*Keisuke Matsui, Kosmas Prassides

50

Graphene and 2D materials: Electronic structure☆1P-7

Electron states tuning of bilayer graphene by intercalation and adsorptionof corannulene*Mina Maruyama, Susumu Okada

51

Graphene and 2D materials: Optical property☆1P-8

The strain effect on van der Waals heterostructure*Rei Usami

52

☆1P-9

Optical properties of transition metal dichalcogenides withmicroshperical optical cavity*Mikio Kobayashi, Keisuke Shinokita, Naoki Wada, Takahiko Endo,
Yasumitsu Miyata, Kazunari Matsuda

53Graphene and 2D materials: Transport property☆1P-10Electrical Transport Properties of W6Te6 Nanowire Network Films*Iori Kikuchi, Hiroshi Shimizu, Hong En Lim, Takahiko Endo, Yusuke
Nakanishi, Yasumitsu Miyata, Jiang Pu, Taishi Takenobu

54

Carbon nanotubes: Applications
1P-11

Antibody-conjugated polymer wrapped single-walled carbon nanotube
for photothermal therapy via near-infrared light*Yukiko Nagai, Kenta Nakamura, Jun Ohno, Tsuyohiko Fujigaya

55

1P-12

Effect of dispersant on supported state and electrocatalytic properties ofPt nanoparticles on single-walled carbon nanotubes*Yuho Abe, Hironori Ogata

56

Carbon nanotubes: Synthesis and growth
1P-13

Catalyst-Free Synthesis of Highly-Crystalline Free-Standing Boron
Nitride Nanotube Films*Shuhui Wang, Ming Liu, Ya Feng, Keigo Otsuka, Esko I Kauppinen,
Shohei Chiashi, Rong Xiang, Shigeo Maruyamaiv

57

1P-14

Influence of carbon source pyrolysis on high-temperature CNT growthfrom solid carbon growth seeds*Mengyue Wang, Michiharu Arifuku, Noriko Kiyoyanagi, Masamitsu
Satake, Taiki Inoue, Yoshihiro Kobayashi

58

1P-15

Highly crystalline single-walled carbon nanotubes by
microplasma-assisted gas-phase chemical vapor deposition*Guohai Chen, Takashi Tsuji, Yoshiki Shimizu, Jaeho Kim, Hajime
Sakakita, Kenji Hata, Don N. Futaba, Shunsuke Sakurai

59

Carbon nanotubes: Transport property
1P-16

Current-induced electrical path formation in random SWCNTs networks*Naoki Koga, Yuuma Matsuura, Masaki Ozawa

60

1P-17

Temperature Dependence of the Thermoelectric Conductivity L12 in
Semiconducting SWCNTs with Controlled Chemical Potential*Yota Ichinose, Akari Yoshida, Manaho Matsubara, Shigeki Saito, Kan
Ueji, Yohei Yomogida, Takahiro Yamamoto, Kazuhiro Yanagi

61

1P-18

Heat and charge-carrier flows in single-walled carbon nanotube film
during a vertical electrolyte-gating*Nobuhiro Muto, Kan Ueji, Yuya Matsuoka, Yota Ichinose, Yohei
Yomogida, Takashi Yagi, Jana Zaumseil, Kazuhiro Yanagi

62

Carbon nanotubes: Others
1P-19

Dry Functionalization of Carbon Nanotubes While Retaining Intrinsic
Properties*Dewu Lin, Don Futaba, Kazufumi Kobashi, Kenji Hata

63

1P-20

Aromaphilicity: the affinity for graphene and carbon nanotubes
determined by experiments and simulations*Atsushi Hirano, Tomoshi Kameda, Momoyo Wada, Takeshi Tanaka,
Hiromichi Kataura

64

Graphene and 2D materials: Applications
1P-21

Photo-enhanced Responses of Gas Sensor Based on MoS2 Monolayers to
Various Biogas Species*Taishi Goto, Ryota Inao, Hiroshi Tabata, Osamu Kubo, Mitsuhiro
Katayama

65

Graphene and 2D materials: Electronic structure
1P-22

Geometric structure and piezoelectric polarization of MoS2 nanoribbons
under uniaxial strain*Susumu Okada, Yanlin Gao, Mina Maruyamav

66Graphene and 2D materials: Optical property
1P-23

Raman spectroscopy of Weyl semimetal Co3Sn2S2*Kenya Tanaka, Akira Takakura, Yasumoto Segawa, Taishi Nishihara,
Kazunari Matsuda, Yuhei Miyauchi

67

1P-24

Helicity resolved Raman spectroscopy in MoS2
*Hirofumi Nema, Yasuhiro Fujii, Shogo Saito, Eiichi Oishi, Akitoshi
Koreeda68

Graphene and 2D materials: Transport property
1P-25

Quasi-ballistic heat transport in graphene elucidated by isotopic interface*Yoshito Hata, Kuniharu Takei, Seiji Akita, Takayuki Arie

69

1P-26

Switching speed of optically-generated spin current at the graphene edge
*Yuan Tian, M. Shoufie Ukhtary, Saito Riichiro

70

Graphene and 2D materials: Synthesis and growth
1P-27

Metal Deposition on a Suspended Graphene Surface*Yuta Kawase, Kenta Matsushima, Juntaro Doi, Shinichiro Mouri,
Tsutomu Araki

71

Others: Synthesis and growth
1P-28

Synthesis of Boron Nitride Nanotubes Using Solid Boron, Water Vapor,and Ammonia*Takazumi Kaida, Hiromu Takahashi, Toshio Osawa, Hisashi Sugime,
Suguru Noda

72

1P-29

Indium intercalation in bundles of WTe atomic wires*Hiroshi Shimizu, Zheng Liu, Hong En Lim, Yusuke Nakanishi, TakahikoEndo, Yasumitsu Miyata

73

11:30~13:00

Lunch

vi

13:00~13:45

Poster preview II
1P-30 ~ 1P-58

13:45~15:30

Poster session II
1P-30 ~ 1P-58
13:45~ Odd number posters
14:35~ Even number posters☆: Candidates for the Young Scientist Poster Award

Carbon nanotubes: Applications☆1P-30Carbon nanotube and boron nitride nanotube make battery lighter and safer 74*Kentaro Kaneko, Keisuke Hori, Suguru Noda

☆1P-31

Chemically-enriched and integrated carbon nanotube
photo-thermoelectric scanners for non-sampling, source and label-freechemical monitoring*Kou Li, Yukio Kawano

75

Carbon nanotubes: Optical property☆1P-32

Photoluminescence property changes of aryl-modifued locallyfunctionalized single-walled carbon nanotubes by ortho-substituent effects*Sadahito Naka, Tsuyohiko Fujigaya, Tomohiro Shiraki

76☆1P-33

Pure and Efficient Single-Photon Sources by Shortening andFunctionalizing Air-Suspended Carbon Nanotubes*Shuma Oya, Rintaro Kawabe, Hiroshi Takaki, Takayuki Ibi, Yutaka
Maeda, Kenta Nakagawa, Hideyuki Maki

77

Carbon nanotubes: Synthesis and growth☆1P-34In situ XAFS analysis of growth mechanism of single-walled carbon
nanotubes from Co-catalyst*Shusaku Karasawa, Daiki Yamamoto, Kamal Sharma, Takahiro Saida,
Shigeya Naritsuka, Takahiro Maruyama

78

Carbon nanotubes: Transport property☆1P-35Comparison of anisotropic thermal conductivities in bundles of SWCNTs
at different temperature regions*Hiromu Hamasaki, Takumi Kawase, Kaori Hirahara

vii

79

Graphene and 2D materials: Applications☆1P-36

Designing of self-assembled peptides as a molecular scaffold forgraphene biosensor*Shun Shimizu, Chishu Honma, Yoshiaki Sugizaki, Hideyuki Tomizawa,
Yuhei Hayamizu

80

Graphene and 2D materials: Electronic structure☆1P-37

Kelvin probe force microscopy study of MoS2/MoSe2 in-plane
heterostructures*Kazuki Hashimoto, Hong En Lim, Yusuke Nakanishi, Takahiko Endo,
Yasumitsu Miyata

81

Graphene and 2D materials: Optical property☆1P-38

Electrolyte-based transition metal dichalcogenide light-emitting devices
with microcavity*Soma Suzuki, Tomohiro Ogura, Takahiko Endo, Yasumitsu Miyata,
Kenichi Yamashita, Jiang Pu, Taishi Takenobu

82

Graphene and 2D materials: Others☆1P-39Stacking angle-dependent intercalation in bilayer graphene*Yuji Araki, Pablo Solís-Fernández, Kenji Kawahara, Hiroki Ago

83

Carbon nanotubes: Applications
1P-40

Organic solar cells with semiconducting carbon nanotubes in the holetransport layer*Daisuke Miyata, Yutaka Matsuo, Hao-sheng Lin, Soma Ishikawa,Takeshi Hashimoto, Satoru Hashimoto

84

1P-41

Electrical characterization of carbon-nanotube thin film transistor basedon direct deposition method*Shugo Kogure, Ryo Mizuno, Hiromichi Kataura, Yutaka Ohno

85

1P-42

Fabrication of SWCNT-BNNT field-effect transistors and evaluation ofcontact resistance*Taiki Sugihara, Satoru Matsushita, Shu Sato, Keigo Otsuka, Taiki
Inoue, Shohei Chiashi, Shigeo Maruyama

86

Carbon nanotubes: Chemistry
1P-43

Modulating selectivity of 1,3-dipolar cycloaddition by carbon nanotube
confinements: A dispersion-corrected density functional theory study*Shuta Fukuura, Takashi Yumura

viii

87

Carbon nanotubes: Synthesis and growth
1P-44

Growth of high-density CNT forest by a self-assembled monolayer ofiron oxide nanoparticles*Yuga Kono, Kento Tabata, Takayuki Nakano, Yoku Inoue

88

1P-45

Chemical vapor deposition growth of carbon layers on boron nitride
nanotubes*Taiki Inoue, Masakiyo Kato, Yungkai Chou, Yoshihiro Kobayashi

89

1P-46

Double-walled carbon nanotube transparent conductor overcoming
performance–yield tradeoff*Jeong-Seok Nam, Qiang Zhang, Jiye Han, Sukanta Datta, Nan Wei,
Er-Xiong Ding, Aqeel Hussain, Saeed Ahmad, Taher Khan, Yong-Ping
Liao, Tavakkoli Mohammad, Bo Peng, Shigeo Maruyama, Hua Jiang, Il
Jeon, Esko I. Kauppinen

90

1P-47

Molecular Dynamics Simulation of Single-Walled Carbon Nanotube
Growth from Metal Carbide Nanoparticles*Ikuma Kohata, Ryo Yoshikawa, Kaoru Hisama, Keigo Otsuka, Shohei
Chiashi, Shigeo Maruyama

91

Fullerenes: Applications
1P-48

Synthesis of g-C2N2-[C60] fullerene nanowhisker composites and theirphotocatalytic activity for degradation of rhodamine B*Jeong Won Ko, Se Hwan Park, Sugyeong Jeon, Weon Bae Ko

92

Fullerenes: Chemistry
1P-49

Synthesis and Characterization of Li-Encapsulated PCBM (Li@PCBM):
the First Li@C60 Derivative*Hiroshi Ueno, Daiki Kitabatake, Hao-Sheng Lin, Yue Ma, Il Jeon,
Fuminori Misaizu, Shigeo Maruyama, Yutaka Matsuo

93

Fullerenes: Optical property
1P-50

Molecular IR emission of C60 and C70 thin plates*Tomonari Wakabayashi, Kazuki Wakebe, Miho Hatanaka, Takeshi
Kodama94

Graphene and 2D materials: Applications
1P-51

Spin current generation by edge plasmon in graphene ribbon*Muhammad Shoufie Ukhtary, Yuan Tian, Riichiro Saito

95

1P-52

One-step synthesis of Mo2C composite film on Mo substrate andevaluation of HER catalytic activities*Shunsuke Numata, Hironori Ogata

96ix

1P-53

Schottky barrier height control by reducing Fermi level pinning effectbetween the single-layer WS2 and ITO electrodes for high-performancetransparent solar cells*Xing He, Toshiro Kaneko, Toshiaki Kato

97

Graphene and 2D materials: Chemistry
1P-54

Confinement of Hydrogen Nanobubble between Graphene and Au
Surface by Electrocatalytic Hydrogen Evolution Reaction*Tomohiro Fukushima, Takaha Komai, Ruifeng Zhou, Kei Murakoshi

98

Graphene and 2D materials: Synthesis and growth
1P-55

Lateral growth of twisted graphene on graphene/SiC template in acontinuous vacuum environment*Yao Yao, Taiki Inoue, Royta Negishi, Makoto Takamura, Yoshitaka
Taniyasu, Yoshihiro Kobayashi

99

1P-56

Wire-to-Ribbon Conversion in Transition Metal Chalcogenides*Hong En Lim, Zheng Liu, Jiang Pu, Hiroshi Shimizu, Takahiko Endo,
Yusuke Nakanishi, Taishi Takenobu, Yasumitsu Miyata

100

Others: Synthesis and growth
1P-57

Improved synthesis of WS2 nanotubes with relatively small diameters bytuning sulfurization timing and reaction temperature*Md. Ashiqur Rahman, Yohei Yomogida, Mai Nagano, Ryoga Tanaka,
Yasumitsu Miyata, Kazuhiro Yanagi

101

1P-58

Molecular dynamics study on open-edge growth of boron nitride
nanotubes from single-walled carbon nanotube template*Kaoru Hisama, Ksenia Bets, Nitant Gupta, Yongjia Zheng, Rong Xiang,
Keigo Otsuka, Shohei Chiashi, Boris Yakobson, Shigeo Maruyama

102x15:30~16:15

Poster preview III
1P-59 ~ 1P-87

16:15~18:00

Poster session III
1P-59 ~ 1P-87
16:15~ Odd number posters
17:10~ Even number posters☆: Candidates for the Young Scientist Poster Award
Carbon nanotubes: Optical property☆1P-59Avidin-biotin interactions on locally functionalized single-walled carbon
nanotubes for photoluminescence wavelength shifts*Yoshiaki Niidome, Rie Wakabayashi, Masahiro Goto, Tsuyohiko
Fujigaya, Tomohiro Shiraki

103☆1P-60Circular dichroism spectra of Helicity-sorted Single-wall Carbon
Nanotubes with Controlled Chemical Potential*Yuuya Hosokawa, Yohei Yomogida, Kazuhiro Yanagi

104

Carbon nanotubes: Synthesis and growth☆1P-61

Growth mechanism and handedness relation of 1D SWCNT-BNNT van
der Waals heterostructures*Yongjia Zheng, Akihito Kumamoto, Kaoru Hisama, Keigo Otsuka, Yuta
Sato, Taiki Inoue, Shohei Chiashi, Daiming Tang, Qiang Zhang, Anton
Anisimov, Esko I. Kauppinen, Kazu Suenaga, Yuichi Ikuhara, Rong
Xiang, Shigeo Maruyama

105

Carbon nanotubes: Transport property☆1P-62

Electrical conductivity and magnetoresistance of SWCNT thin films
under ionic-liquid gating*Hiroki Date, Takenori Fujii, Taiki Inoue, Esko Kauppinen, Shigeo
Maruyama, Shohei Chiashi

106

Graphene and 2D materials: Optical property☆1P-63

Optical Spin Hall Effect in Few-Layerd NbSe2: Spin Hall Angle andTemperature Effect*Ren Habara, Katsunori Wakabayashi

107☆1P-64

Anomalous Photovoltaic Effect in Strained Monolayer WS2*Takahashi Togo, Jiang Pu, Takahiko Endo, Yasumitsu Miyata, Taishi
Takenobu

108

xiGraphene and 2D materials: Chemistry☆1P-65Controlled surface etching of multilayer hBN*Hsin Yi, Pablo Solís-Fernández, Hiroki Ago

109

Graphene and 2D materials: Synthesis and growth☆1P-66

Nano ~ sub-nanometer-width one-dimensional quantum wells embeddedin two-dimensional semiconductors*Nanami Ichinose, Liu Zheng, Takashi Taniguchi, Kenji Watanabe, Ryo
Kitaura110

Graphene and 2D materials: Transport property☆1P-67

N-type polar transition of p-type MoS2 by chemical doping*Hiroto Ogura, Yoshiyuki Nonoguchi, Shaochun Zhang, Yusuke
Nakanishi, Hong En Lim, Ryo Kitaura, Kosuke Nagashio, Yasumitsu
Miyata111☆1P-68Nonlinear anomalous Hall effect in trigonal superconductor PbTaSe2*Yuki Itahashi, Toshiya Ideue, Shintaro Hoshino, Chihiro Goto,
Hiromasa Namiki, Takao Sasagawa, Yoshihiro Iwasa

112

Carbon nanotubes: Applications
1P-69

Thermal properties of MWNT coatings for solar collector*Hiroshi Furuta, Shimon Honda, Md. Saiful Islam, Akimitsu Hatta

113

1P-70

Electrical and mechanical property of homogeneous CNT/Cu composite
wire made from copper nanoparticles decorated spin capable CNT forest*Kosuke Tanaka, Takayuki Nakano, Yoku Inoue

114

Carbon nanotubes: Optical property
1P-71

Spectroscopic ellipsometry on single-chirality-enriched carbon nanotube
membranes*Hengkai Wu, Taishi Nishihara, Akira Takakura, Kazunari Matsuda,
Takeshi Tanaka, Hiromichi Kataura, Yuhei Miyauchi

115

1P-72

Comparison between high harmonic generation in metallic single-walledcarbon nanotubes and graphene*Hiroyuki Nishidome, Kohei Nagai, Kento Uchida, Kenji Kawahara,
Junko Eda, Hitomi Okubo, Yohei Yomogida, Hiroki Ago, Koichiro
Tanaka, Kazuhiro Yanagi

116

1P-73

Near infrared photoluminescence from locally functionalized
single-walled carbon nanotubes synthesized using bisaryl modifiers withshort linkage structures*Tomohiro Shiraki, Haruka Aoki, Tsuyohiko Fujigaya

117

xii

Carbon nanotubes: Synthesis and growth
1P-74

Growth of single-walled carbon nanotubes from Ir catalyst on alumina
buffer layer prepared by dip-coating process*Shu Kondo, Daiki Yamamoto, Kamal Sharma, Takahiro Saida, Shigeya
Naritsuka, Takahiro Maruyama

118

1P-75

Comparison of single-walled carbon nanotube growth with Ir catalyst on
SiO2 layer prepared by different methods: Sputtering method vs thermaloxidation*Daiki Yamamoto, Shu kondo, Kamal Sharma, Takahiro Saida, Shigeya
Narituka, Takahiro Maruyama

119

1P-76

Quantitative crystallinity investigation of carbon nanotubes produced byplasma-assisted gas-phase synthesis using far-infrared spectroscopy*Takashi Tsuji, Kazufumi Kobashi, Guohai Chen, Jaeho Kim, Hajime
Sakakita, Yoshiki Shimizu, Kenji Hata, Don Futaba, Shunsuke Sakurai

120

1P-77

The effect of oxidants on SWCNT growth analyzed by isotope labelingtechnique*Ryoya Ishimaru, Keigo Otsuka, Taiki Inoue, Shohei Chiashi, Shigeo
Maruyama

121

Fullerenes: Others
1P-78

Production of atom-encapsulated C60 by ns laser induced breakdown*Moeno Maejima, Haruo Shiromaru, Tomonari Wakabayashi, Koichi
Kikuchi, Yohji Achiba, Takeshi Kodama

122

1P-79

Study of magnetic properties of Er-dimetallofullerene anions*Naoya Fujita, Aichi Yamashita, Yoshikazu Mizuguchi, Koichi Kikuchi,
Yohji Achiba, Takeshi Kodama

123

1P-80

The cage dependence of single molecule magnet properties of
Tb-dimetallofullerene anions: [Tb2@C80(Ih)]- and [Tb2@C78 (D3h)]*Kazuki Yamagishi, Aichi Yamashita, Yoshikazu Mizuguchi, Ryuji
Higashinaka, Yuji Aoki, Koichi Kikuchi, Yohji Achiba, Takeshi Kodama

124

Graphene and 2D materials: Applications
1P-81

Modulation of electronic states in two-dimensional semiconductors bybowl-shaped molecules.
*Shotaro Yotsuya, Akito Fukui, Akihiro Tsurusaki, Takeshi Yoshimura,
Norifumi Fujimura, Daisuke Kiriya

125

1P-82

Diffusion of Oxygen Atom on Single Layer of Graphene Sheet with
Atomic Vacancy V6 for Graphene Oxide as ReRAM devices*Takazumi Kawai

126

xiii

Graphene and 2D materials: Transport property
1P-83

Modulation of electronic properties of graphene by B⁺ / N⁺ beam irradiation 127*Takumi Hidaka, Yasushi Ishiguro, Kosuke Nakamura, Tomoaki
Nishimura, Kazuyuki Takai

1P-84

Application of the energy exchange eHEX algorithm to thermal transportin 2 layers hBN system in molecular dynamics calculations*Tatiana Zolotoukhina, Yusuke Michisuji, Wataru Yuhara

128

Aggregates of Elementary Diamond Nanoparticles in Their Aqueous
Colloidal Solutions Induced by Trace Ions
*Masaya Nemoto, Toshihiko Tanaka, Yasuhiro F. Miura, Tetsuya
Aoyama, Kazunori Miyamoto, Atsuya Muranaka, Masanobu Uchiyama,
Eiji Osawa

129

Others: Others
1P-85

Others: Synthesis and growth
1P-86

Synthesis and properties of fluorescent carbon quantum dots using lignin*Takaki Yoda, Hironori Ogata

130

1P-87

Synthesis of Boron Nitride Nanotubes Using Mist of Boric Acid Aqueous
Solution as a Low-Cost Boron Source*Sota Ebisu, Tetsuro Sawada, Toshio Osawa, Hisashi Sugime, Suguru
Noda

131

xiv

Sep. 2 (Thu)
09:00~10:35

CNT 30th Anniversary Session I

09:00~09:05

Introduction
Yoshiyuki Miyamoto

09:05~09:35

Special lecture

2S-1

Discovery of carbon nanotubes*Sumio Iijima

09:35~10:05

Special lecture

2S-2

Carbon Nanotube based high performance CMOS and RF devices
operating in terahertz regime*Lian-Mao Peng

10:05~10:35

Special lecture

2S-3

30 years of nanotubes with FNTG Society*Riichiro Saito

10:35~11:05

Special lecture

2S-4

Perspective of carbon nanotubes research celebrating the 30th
Anniversary*Shigeo Maruyama

11:05~11:20

Coffee break

11:20~12:25

CNT 30th Anniversary Session II

11:20~11:25

Introduction
Masako Yudasaka

11:25~11:45

Invited lecture

2I-1

Separation of single-wall carbon nanotubes by polysaccharide gels andtheir applications.
*Takeshi Tanaka

1

xv

2

3

4

13

11:45~12:05

Invited lecture

2I-2

Progresses and future challenges of carbon nanotube production*Suguru Noda

12:05~12:25

Invited lecture

2I-3

Developments of the Carbon Nanotube Applications based on Molecular
Adsorption*Tsuyohiko Fujigaya

12:25~13:20

Lunch

13:20~13:45

Award ceremony

13:45~14:15

General meeting

14:15~14:30

Coffee break

14

15

Graphene and 2D materials: Applications
14:30~15:00

Special lecture

2S-5

2D Materials: Integration Challenges for Future Electronics*Cedric Huyghebaert

5Graphene and 2D materials: Synthesis and growth
15:00~15:30

Special lecture

2S-6

Layer-exchange synthesis of multilayer graphene for flexible battery
anodes*Kaoru Toko6

Graphene and 2D materials: Applications
15:30~15:45
2-1

Cationic nitrogen-doped graphene as a p-type modifier for
high-performance PEDOT:PSS hole transporters in organic solar cells*Hao-Sheng Lin, Takuhei Kaneko, Soma Ishikawa, Sangwoo Chae,
Takumi Yana, Nagahiro Saito, Yutaka Matsuo

xvi

17

Graphene and 2D materials: Others
15:45~16:00
2-2“Ultramixing”: A Simple and Effective Method to Obtain Controlled andStable Dispersions of Graphene Oxide in Cell Culture Media*Giacomo Reina, Amalia Ruiz, Diane Murera, Yuta Nishina, Alberto
Bianco18Graphene and 2D materials: Applications
16:00~16:15
2-3

pH dependence of electrical response in graphene biosensors
functionalized by self-assembled peptides*Chishu Homma, Yoshiaki Sugizaki, Hideyuki Tomizawa, Yuhei
Hayamizu

16:15~16:30

Coffee break

19

Carbon nanotubes: Synthesis and growth
16:30~17:00

Special lecture

2S-7

Nucleation and growth of SWNTs are driven by the dynamics of theiredge*Christophe Bichara

7

Single chirality separation of metallic single-wall carbon nanotubes using
gel-column chromatography*Hiromichi Kataura, Mayumi Tsuzuki, Takeshi Tanaka

20

Design of multi-step gas-phase CVD reactor for the synthesis ofhigh-quality single-walled carbon nanotube*Shunsuke Sakurai, Takashi Tsuji, Guohai Chen, Maho Yamada, Jaeho
Kim, Hajime Sakakita, Yoshiki Shimizu, Kenji Hata, Don Futaba

21

17:00~17:15
2-4

17:15~17:30
2-5

xvii

17:30~17:45
2-6

O2 assisted growth of small-diameter vertically-aligned SWCNTs using
Os catalyst*Kamal Prasad Sharma, Masaya Kobayashi, Daiki Yamamoto, Takahiro
Maruyama

22

Synthesis and Characterization of Various One-dimensional van der
Waals Heterostructures*Wanyu Dai, Yongjia Zheng, Keigo Otsuka, Shohei Chiashi, Rong Xiang,
Shigeo Maruyama

23

17:45~18:00
2-7

xviii

Sep. 3 (Fri)9:00~10:00

Osawa Award / Iijima Award Nominees

Carbon nanotubes: Chemistry
09:00~09:20♦3-1

Chirality isolation of single-walled carbon nanotubes by the phasetransition of a thermoresposive polymer
Eriko Shimura, Tomomi Tanaka, Yuki Kuwahara, Takeshi Saito, Toshiki
Sugai, *Shota Kuwahara

24

Carbon nanotubes: Applications
09:20~09:40♦3-2

Patterning and Photo-thermal Sensing Applications of Suspended, 2D,
Micro-scale CNT film array*Daichi Suzuki, Nao Terasaki

25

Graphene and 2D materials: Optical property
09:40~10:00♦3-3Novel excitonic features of moiré exciton in twisted van der Waals
heterostructures*Keisuke Shinokita, Yuhei Miyauchi, Kenji Watanabe, Takashi
Taniguchi, Kazunari Matsuda

10:00~10:15

Coffee break

26

Carbon nanotubes: Optical property
10:15~10:45

Special lecture

3S-1

Deterministic transfer of optical-quality carbon nanotubes for atomicallydefined technology
Keigo Otsuka, Nan Fang, Daiki Yamashita, Takashi Taniguchi, Kenji
Watanabe, *Yuichiro K. Kato
xix

8

Carbon nanotubes: Applications
10:45~11:00
3-4

Controlled Removal of Surfactants from Double-Walled Carbon
Nanotubes for Stronger p-Doping Effect and its Demonstration in
Perovskite Solar Cells*Jeong-Seok Nam, Ahmed Shawky, Seungju Seo, Rong Xiang, Yutaka
Matsuo, Shigeo Maruyama, Il Jeon

27

Carbon Nanotube Mask Filters and their Hydrophobic Barrier andHyperthermic Antiviral Effects on SARS-CoV-2*Sangsu Lee, Jeong-Seok Nam, Jiye Han, Qiang Zhang, Esko I.
Kauppinen, Il Jeon

28

Output power enhancement of stretchable, transparent triboelectric
nanogenerator by charge trapping layer*Masahiro Matsunaga, Jun Hirotani, Yutaka Ohno

29

Improvement in Thermal Diffusivity of CNT/Polymer Composite Films
via Orienting CNTs by Robotic Dispenser*Nikita Kumari, Ryo Abe, Naofumi Okamoto, Manish Pandey, Masakazu
Nakamura30

11:00~11:15
3-5

11:15~11:30
3-6

11:30~11:45
3-7

Carbon nanotubes: Transport property
11:45~12:00
3-8Hall effect in gated single-wall carbon nanotube films*Yohei Yomogida, Kanako Horiuchi, Ryotaro Okada, Hideki Kawai, Yota
Ichinose, Hiroyuki Nishidome, Kan Ueji, Natsumi Komatsu, Weilu Gao,
Junichiro Kono, Kazuhiro Yanagi

31

3-9

Intuitive Correlations between Heat and Charge-Carrier Flows in Vertical
Devices Using Single-Walled Carbon Nanotube Films*Kan Ueji, Nobuhiro Muto, Yuya Matsuoka, Yota Ichinose, Yohei
Yomogida, Takashi Yagi, Jana Zaumseil, Kazuhiro Yanagi

32

12:15~13:15

Lunch

12:00~12:15

xxOthers: Synthesis and growth
13:15~13:30
3-10

Dispersed 2.6nm quasi-spherical diamond particles: A versatile starting
material in nanotechnology*Eiji Osawa, Toshihiko Tanaka, Amanda Barnard

33

Fullerenes: Chemistry
13:30~13:45
3-11

Self-Assembled Organofullerene Nano- and Microspheres Containing
Inorganic and Biological Nanoparticles*Koji Harano, Ryosuke Sekine, Prince Ravat, Haruaki Yanagisawa,
Chao Liu, Masahide Kikkawa, Eiichi Nakamura

34

Graphene and 2D materials: Electronic structure
13:45~14:15

Special lecture

3S-2

Direct observation of the layer-number-dependent electronic structure in
few-layer WTe2
*Masato Sakano

9

Carrier density tuning of Nb-doped WSe2 by an external electric field*Kaoru Hisama, Yanlin Gao, Mina Maruyama, Ryo Kitaura, Susumu
Okada

35

14:15~14:30
3-12Graphene and 2D materials: Others
14:30~14:45
3-13

Enhancement of the Thermal Conductance on Artificially Stacked
MoS2 by Intercalation
Wenyu Yuan, Kan Ueji, Takashi Yagi, Takahiko Endo, Hong En Lim,
Yasumitsu Miyata, Yohei Yomogida, *Kazuhiro Yanagi

36

Graphene and 2D materials: Applications
14:45~15:00
3-14Edge States of Graphene Oxide Observed by Field Emission and Field
Ion Microscopy*Yahachi Saito, Yuta Nishina

15:00~15:15

Coffee breakxxi

37

Graphene and 2D materials: Electronic structure
15:15~15:45

Special lecture

3S-3

Post/Beyond Graphene: from Topological to 2.5-Dimensional Quantum
Materials*Takao Sasagawa

10Energetics of bilayer hexagonal boron nitride nanoflakes: A nucleation
process of a second layer on a substrate layer*Mina Maruyama, Susumu Okada

38

15:45~16:00
3-15

Graphene and 2D materials: Transport property
16:00~16:15
3-16

Efficient fabrication of graphene nanoribbon quantum dot devices withtemperature-stable orbital-level spacing*Naofumi Sato, Takahito Kitada, Mizuki Seo, Toshiro Kaneko, Tomohiro
Otuka, Toshiaki Kato

39

Graphene and 2D materials: Optical property
16:15~16:30
3-17

Activation of single-photon emitter on CVD-hBN treated with thermal
process*Yusuke Adachi, Takayuki Arie, Kuniharu Takei, Seiji Akita

16:30~16:45

Coffee break

40

Graphene and 2D materials: Synthesis and growth
16:45~17:15

Special lecture

3S-4Novel two-dimensional materials stabilized on substrates*Yukiko Yamada-Takamura

11

Graphene and 2D materials: Electronic structure
17:15~17:30
3-18

Spiro-graphene: New two-dimensional C allotropes comprisingfenestratetraene and cyclooctatetraene*Susumu Okada, Nguyene Thanh Cuong, Yanlin Gao, Mina Maruyama
xxii

41

Graphene and 2D materials: Synthesis and growth
17:30~17:45
3-19

Insulating properties of h-BN film synthesized by sputtering method*Daiyu Kondo, Kenjiro Hayashi, Masako Kataoka, Shintaro Sato

42

3-20

Precipitation of graphite layer with smooth and large domain on c-planesapphire using crystallized Ni catalyst*Shigeya Naritsuka, Asato Nakashima, Tomoaki Murahashi, Tatsuya
Kashio, Yasuhiro Fukunishi, Kazuki Mita, Takahiro Maruyama

43

18:00~18:05

Closing

17:45~18:00

xxiii

特別講演Special Lecture

2S – 1 ～ 2S – 7
3S – 1 ～ 3S – 4

2S-1
Discovery of carbon nanotubes
Sumio Iijima
Member of Japan Academy and University Professor, Meijo University, Nagoya
468-8502,JapanThe name became so well known that it was introduced in high school chemistry textbooks.
The number of Google Citations in this treatise is 53,678 (August 2021), which is still
increasing and a wide range of research is underway. For example, a dentist's
three-dimensional X-ray imaging device (using CNTs as an electron beam source) approvedby the US FDA (Food and Drug Administration) in July this year has been commercialized.
Development of the favorite CNT device is also being strengthened in the United States andChina (Japan?).
The discovery of CNT can be said to be serendipity, as is known from many inventions anddiscoveries. However, it can be said that the discovery was inevitable. The discovery of CNTs
would not be possible without a high resolution electron microscope. The relationshipbetween this measuring device and me began when I was a graduate student, and thediscovery of CNT was about 30 years later. That long research experience has led to
discovery.
Corresponding Author: S.Iijima
Tel: +81-52-834-4001, Fax: +81-52-834-4001,
E-mail:iijimas@meijo-u.ac.jp

-1-

2S-2

Carbon Nanotube based high performance CMOS and RF devices
operating in terahertz regime
Lian-Mao Peng
Department of Electronics, Peking University, Beijing 100871, China

Carbon nanotube (CNT)-based electronics has been considered one of the most promising
candidates to replace Si complementary metal-oxide-semiconductor (CMOS) technology,
which will soon meet its performance limit. In particular CNTs have been investigated forvarious electronic and optoelectronic device applications, such as sub-10nm CMOS devices
which outperform that of state-of-the-art Si based CMOS devices in both speed and power
consumption [1-5], as well as idea material for monolithic optoelectronic integration withcomplementary MOS-compatible signal processing circuit [6-8].
High performance CNT-based electronics requires scalable production of dense andelectronically pure semiconducting CNT arrays on wafers. A multiple dispersion and sorting
process have been developed that resulted in extremely high semiconducting purity and adimension-limited self-alignment procedure for preparing well-aligned CNT arrays with atunable density of 100 to 200 CNTs per micrometer on a 10-centimeter silicon wafer. Top-gate
field-effect transistors (FETs) fabricated on the CNT array show better performance than thatof commercial silicon MOS FETs with similar gate length, while maintaining a low roomtemperature subthreshold swing of <90 millivolts per decade. Batch-fabricated top-gate fivestage ring oscillators exhibited high maximum oscillating frequency of >8 gigahertz [9].
The development of next-generation wireless communication technology requires integrated
RF devices capable of operating at frequencies greater than 90 GHz. Radiofrequency transistors
operating in terahertz regime have been developed using high-purity carbon nanotube arrays.
The nanotube arrays exhibit a high carrier mobility of over 1,500 cm2 V−1 s−1 and a saturation
velocity of up to 3.0 × 107 cm s−1. Transistors with a 50 nm gate length show current-gain andpower-gain cutoff frequencies of up to 540 and 306 GHz, demonstrating potential operation at
millimetre-wave and terahertz frequencies [10].
[1] C. Qiu et al. Science, 255, 271 (2017).
[2] C. Qiu et al. Science, 361, 387 (2018).
[3] D.L. Zhong et al. Nature Electronics, 1, 40 (2018).
[4] L.-M. Peng et al. Nature Electronics, 1, 158 (2018).
[5] L. Xiang et et al. Nature Electronics, 1, 273 (2018).
[6] L.J. Yang et al. Nature Photonics, 5, 672 (2011).
[7] Y. Liu et al. Nature Communication, 8, 15649 (2017).
[8] Y. Liu et al. Science Advances, 3, e170145 (2017).
[9] L. Liu et al. Science, 368, 850 (2020).
[10] H. Shi et al. Nature Electronics, 4, 405 (2021).
Corresponding Author: L.-M. Peng
Tel: +86-01-62764967
E-mail: lmpeng@pku.edu.cn

-2-

2S-3

30 years of nanotubes with FNTG Society○Riichiro Saito1
1

Department of Physics, Tohoku University, Sendai 980-8578, Japan

Since the first paper by S. Iijima, 30 years have passed for nanotube research. In this presentation, we would
like to overview the history of carbon nanotubes and summarize a perspective which has been discussed in the
FNTG society.
Carbon nanotube is a rolled-up graphene sheet into a cylinder. A typical size of a single wall carbon nanotube(SWNT) is 1-3nm in diameter and 100nm-10cm in length and thus a SWNT is one-dimensional material. The
structure of a SWNT is defined by two integers (n,m), which is called as chirality. Depending on the chirality of
SWNT, a SWNT can be either metal or semiconductor. In particular, an energy gap of a semiconducting SWNT isinversely proportional to the diameter of the SWNT, which gives chirality-dependent physical properties such as
optical properties, thermo-electronic properties and transport properties. On the other hand, as an extension ofcarbon fiber, we expect an exceptional mechanical and thermal properties of SWNTs or multi-wall carbon
nanotubes (MWNTs).
Since the early times of 1990’s, electron-microscopy measurement and solid state physics of SWNTs havebeen reported and discussed, respectively. However, we should wait for a large synthesis of carbon nanotube thatappears in the end of the last century to measure and apply SWNTs. Chemical vapor deposition (CVD) in which
the gas of molecule that contains carbon atoms is decomposed by the metal catalyst such as Fe, Co, and Ni, at ahigh temperature from 500 to 1000C, succeeded to a large synthesized SWNTs. Optimizing the condition of CVD,
the synthesis of SWNTs is industrialized, which accerelates the measurement of physical properties of SWNTs asa function of (n,m) in 2020’s and the application of SWNTs in 2010’s.
One of application of SWNTs is to make a semiconductor device. Since the size of Si semiconductor devices
has been decreasing up to several nm, people say that the Moore’s law will be finished within a decade. A SWNT
has a size of 1nm and thus incorporating SWNTs in the integrated circuit would be a solution for 1nm devices. In
2000’s, single nanotube field effect transistor is fabricated. However, the technique was in the laboratory level.
SWNT devices have some merits such as high melting point, flexible, chemically stable. On the other hand, there
are many challenges for making a device. For example, (1) synthesis of single (n,m) (2) process technique of
putting a SWNT on the device. In a SWNT, it is also known that electron-electron interaction is crucial for transport
properties even at the room temperature. Thus quntum properties of devices are necessary to discuss the new
operation of devices at the room temperature.
In the currect situation in 2021, the applications of SWNTs are based on the following three kinds of SWNT
materials; (1) the randomly oriented or aligned sheet of SWNTs, which can be used for transparent conducting
sheet, solar cell, neural network device, and thermal-conducting sheet. (2) a yarn of SWNTs, which can be used
for a strong fiber or artificial mustle, and (3) independent SWNT separated by surfactant in the water, which canbe used for biological marker at far infrared region. In the presentation, we would like to introduce corresponding
techniques that support the applications.
Saito acknowledges Professor Mildred S. Dresselhaus, Professor Gene F. Dresselhaus and all collaborators forgiving me the life of carbon nanotubes.
Corresponding Author: R. Saito
Tel: +81-22-795-7754, Fax: +81-22-795-6447,
E-mail: rsaito@flex.phys.tohoku.ac.jp
Web: http://flex.phys.tohoku.ac.jp

-3-

2S-4
Perspective of carbon nanotubes research celebrating the 30th Anniversary○Shigeo Maruyama1
1

Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan

It is a great pleasure to celebrate 30th Anniversary of carbon nanotube research since theland-mark paper by Professor Sumio Iijima [1]. A family of nano-carbon materials such as
fullerenes, carbon nanotubes, graphene, and other 2D materials (shown in Fig. 1) has attracted
many researchers in science, engineering and application fields. We can witness through therecent 60th anniversary of FNTG research society [2] and 20th anniversary of NT conferences[3]. Especially, single-walled carbon nanotubes (SWCNTs) with the diverse optical andelectronic properties (metallic or semiconducting) depending on chiral indices (n, m) have been
the remarkable key material. I will discuss the future perspective of carbon nanotube researchwith the emphasis on one-dimensional (1D) van der Waals (vdW) hetero structures [4] basedon SWCNT as shown in Fig. 2 [5]. We can further extend 1D vdW hetero structures as shownin Fig. 3 [6] including the controlled modulation of properties by employing the inner space of
the SWCNTs to encapsulate various materials.

Fig. 2 One-dimensional hetero
structures [5],SWCNT@BNNT@MoS2NT.
Fig. 1 Structure of typical nano-carbon materials.
[1] S. Iijima, Nature, 354, 56 (1991).
[2] The Fullerenes, Nanotubes and Graphene (FNTG) Research Society,https://fntg.jp/.
[3] International Conference on Science and Application of Nanotubes and
Low-Dimensional Materials (NT conferences), http://www.photon.t.utokyo.ac.jp/nt/.
[4] R. Xiang et al., Science, 367, 537 (2020).
[5] R. Xiang, S. Maruyama, Small Sci., 1, 2000039 (2021).
[6] S. Cambré, M. Liu, D. Levshov, K. Otsuka, S. Maruyama, R. Xiang,
Small, 2102585 (2021).
Corresponding Author: S. Maruyama,
Tel: +81-3-5841-6421, Fax: +81-3-5800-6983
E-mail: maruyama@photon.t.u-tokyo.ac.jp

Fig. 3 Extended 1D hetero
structures based on CNT [6].

-4-

2S-5
2D Materials : Integration Challenges for Future Electronics
Cedric Huyghebaert for the 2D team of imec
At imec we explore the challenges of wafer scale integration of 2D materials. In this talk, we will reporton wafer level integrated graphene-based modulators and double gated WS2 transistors with gate length
down to 18 nm on 300mm wafers in our Si fab.
We will address the challenges linked to the growth, the transfer and the encapsulation of 2D materials
in a semiconductor environment. We built an integration vehicle where the impact of each process step
can be understood and developed accordingly to enhance device performance. The work presented here
paves the way towards industrial adoption of 2D materials.

-5-

2S-6

Layer-exchange synthesis of multilayer graphene for flexible battery anodes○Kaoru Toko1,
1

Institute of Applied Physics, University of Tsukuba, Tsukuba 305-8573, Japan

Low-temperature synthesis of multilayer graphene (MLG) on insulators is the key toincorporating MLG-based functional thin films, including transparent electrodes, lowresistance wiring, heat spreaders, and battery anodes in advanced electronic devices. In the fieldof semiconductor thin films, layer exchange phenomenon is known as a type of reaction
between semiconductor and metal layers [1]. In 2017, we discovered the layer exchange
between carbon and metals [2], which is based on a principle different from that of conventional
carbon precipitation methods. The layer exchange enables low-temperature synthesis andcontrol of film thickness and position of MLG on arbitrary substrates. In particular, Ni-induced
layer exchange allows for the MLG anode electrode structure on a plastic substrate, which will
be useful for fabricating flexible rechargeable batteries.
In the presentation, the following topics will be introduced:

1. The mechanism and basic properties of layer exchange.
2. The important factors for layer exchange of MLG: metal species [3], annealing conditions[4], interlayer insertion [5,6], and thickness [7].
3. The electrical properties [7] and battery anode application [8].
[1] K. Toko and T. Suemasu, J. Phys. D. Appl. Phys. 53, 373002 (2020).
[2] H. Murata et al., Appl. Phys. Lett. 110, 033108 (2017).
[3] Y. Nakajima et al., ACS Appl. Mater. Interfaces 10, 41664 (2018).
[4] H. Murata et al., App. Phys. Express 13, 055502 (2020).
[5] H. Murata et al., Appl. Phys. Lett. 111, 243104 (2017).
[6] H. Murata et al., CrystEngComm 22, 3106 (2020).
[7] H. Murata et al., Sci. Rep. 9, 4068 (2019).
[8] H. Murata et al., ACS Appl. Energy Mater. 3, 8410 (2020).

Corresponding Author: K. Toko
Tel: +81-29-853-5472, Fax: +81-29-853-5205,
E-mail: toko@bk.tsukuba.ac.jp

-6-

2S-7
Nucleation and growth of SWNTs are driven by the dynamics of their edge
Christophe Bichara
CINaM, CNRS and Aix-Marseille University, Marseille, France
In classical crystal growth, the interaction of the growing object with its support and theenergies of the different facets determine the growth mode and the resulting crystalline structures.
The synthesis of carbon nanotubes by chemical vapor deposition poses somewhat similar yet more
complex issues. The catalytic particle is both a support and a reactive interface with the growing tube,
and many properties are altered because of the nanometric size of the objects.
In this context, we have identified different growth modes driven by the thermodynamic
properties of the interface [1, 2] and developed a model of the interface [3], emphasizing theimportance of the configurational entropy of the nanotube edge to stabilize chiral tubes and to accountfor the temperature dependence of tube helicity distributions. This simple lattice model is pushed
further to account for more general interface structures and kinetic Monte Carlo (KMC) simulations
are developed [4] to study the growth mechanisms and kinetics, and analyze growth rates in relation
with the chiral selectivity of the synthesis.
We also present new in situ measurements of individual CNT growth rates by homodyne
polarization microscopy [5] with better temporal and statistical resolution than previous studies [6].
The growth patterns are surprisingly complex and exhibit growth instabilities characterized bystochastic alternations of growth, etching, stops and sometimes restarts. These events occur with orwithout changes in the structure of single-walled nanotubes. To understand the first, fascinating case,
we perform KMC simulations and propose a model emphasizing the role of the tube/catalyst interface
dynamics.
[1] Fiawoo M.-F. C. et al., Phys. Rev. Lett. 108, 195503 (2012).
[2] He M. et al., Nanoscale 10, 6744, (2018)[3] Magnin Y. et al., Science 362, 212–215 (2018)[4] Förster G. D., et al., AIP Adv. 11, 045306 (2021).
[5] Pimonov V., et al., submitted to Nano Letters[6] Koyano B. et al., Carbon 155, 635–642 (2019)

-7-

3S-1

Deterministic transfer of optical-quality carbon nanotubes
for atomically defined technology
K. Otsuka1, N. Fang1, D. Yamashita2, T. Taniguchi3, K. Watanabe4, ○Y. K. Kato1,2
1

Nanoscale Quantum Photonics Laboratory, RIKEN Cluster for Pioneering Research,
Saitama 351-0198, Japan
2

Quantum Optoelectronics Research Team, RIKEN Center for Advanced Photonics,
Saitama 351-0198, Japan

3

International Center for Materials Nanoarchitectonics, National Institute for Materials Science,
Ibaraki 305-0044, Japan

3

Research Center for Functional Materials, National Institute for Materials Science,
Ibaraki 305-0044, Japan

When continued device scaling reaches the ultimate limit imposed by atoms, technology
based on atomically precise structures is expected to emerge. Device fabrication will thenrequire building blocks with identified atomic arrangements and assembly of the components
without contamination. Here we report on a versatile dry transfer technique for deterministic
placement of optical-quality carbon nanotubes [1]. Single-crystalline anthracene is used as a
medium which readily sublimes by mild heating, leaving behind clean nanotubes andthus enabling bright photoluminescence. We are able to position nanotubes of a desiredchirality with a sub-micron accuracy under in-situ optical monitoring, thereby
demonstrating deterministic coupling of a nanotube to a photonic crystal nanobeam cavity. A
cross junction structure is also designed and constructed by repeating the nanotube transfer,where intertube exciton transfer is observed. Our results represent an important step towards
development of devices consisting of atomically precise components and interfaces.
Parts of this study are supported by JSPS (KAKENHI JP20H02558, JP19J00894,
JP20K15137), MIC (SCOPE 191503001), and MEXT (Nanotechnology Platform
JPMXP09F19UT0075). Growth of hexagonal boron nitride crystals is supported by the
Element Strategy Initiative conducted by the MEXT (JPMXP0112101001), JSPS (KAKENHI
JP20H00354), and JST (CREST JPMJCR15F3). K.O. and D.Y. are supported by
JSPS (Research Fellowship for Young Scientists). N.F. is supported by RIKEN Special
Postdoctoral Researcher Program. We thank T. Inoue, S. Maruyama, and K. Nagashio for help
in the material preparation, as well as the Advanced Manufacturing Support Team at
RIKEN for technical assistance.
[1] K. Otsuka, N. Fang, D. Yamashita, T. Taniguchi, K. Watanabe, Y. K. Kato, Nat. Commun. 12, 3138 (2021).
Corresponding Author: Y. K. Kato
Tel: +81-48-462-1449
E-mail: yuichiro.kato@riken.jp
https://katogroup.riken.jp/

-8-

3S-2

Direct observation of the layer-number-dependent electronic structure
in few-layer WTe2
Masato Sakano
Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo,
Bunkyo-ku, Tokyo, 113-8656, Japan

The physical property in the atomically-thin two-dimensional (2D) material drasticallychanges as the number of layers decreases to the monolayer limit. The quantization of band
dispersions along the stacking direction, as well as the reduction of symmetry compared to theinfinite bulk crystal can strongly modify the electronic structures of 2D materials, resulting in
the peculiar physical phenomena. WTe2, the material we focused on in our study, is one of therepresentative materials. Bulk WTe2 is a charge-compensated polar semimetal [1] predicted as
an inversion-symmetry-broken type-II Weyl semimetal [2]. In contrast, mono- and 2-layer
WTe2 are known as insulators with small bandgaps [3-5]. In terms of the structural symmetry,
although the monolayer WTe2 is centrosymmetric, the stacking order of layers breaks theinversion-symmetry in few-layer WTe2, leading to the unique phenomena related to Berrycurvature dipole [4-8]. The abovementioned studies on thin-flake WTe2 have been mostly
proceeded by comparing the transport properties on micro-devices with the band calculations.
Due to the limited size (typically ~10 m) and volume of the samples as well as the difficultyin handling, many of the physical property measurements established in bulk systems are notavailable. Nevertheless, the precise investigation of the electronic structure is extremely
important, especially considering that the property related to Berry-curvature is determined by
the electronic band dispersions in the reciprocal space.
In our study, by using micro-focused laser angle-resolved photoemission spectroscopy(ARPES) in combination with the 2D materials manufacturing system (2DMMS) [9] that canfreely stack atomic layers by image recognition, machine learning, and robotic assembly, wedeveloped an efficient procedure for investigating the band dispersions of atomically thin
micro-flakes. We prepared 2D WTe2 flake samples for ARPES by using the Graphite / hBN asa substrate and by encapsulating with graphene. We successfully observed the thicknessdependent band structures of the atomically thin WTe2 flakes [Fig.1(a)-(d)]. It clearly revealed
the insulator–semimetal transition realized between the2- and 3-layer, and the striking even–odd effect in thelayer-number dependence of the spin-band splitting [10].
[1] M. N. Ali, et al., Nature 514, 205, (2014).
[2] A. A. Soluyanov, et al., Nature 527, 495 (2015).
[3] Z. Fei, et al., Nat. Phys. 13, 677 (2017).
[4] Z. Fei, et al., Nature 560, 336 (2018).
[5] I. Cucchi, et al., Nano Lett. 19, 554 (2019).
[6] K. Kang, et al., Nat. Mater. 18, 324 (2019).
[7] H. Wang and X. Qian, npj Comput. Mater. 5, 119 (2019).
[8] J. Xiao, et al., Nat. Phys. 16, 1028 (2020).
[9] S. Masubuchi, et al., npj 2D Mater. Appl. 4, 3 (2020).
[10] M, Sakano et al., arXiv:2103.11885 (2021).
Corresponding Author: M. Sakano,
Tel: +81-3-5841-7903, Fax: +81-3-5841-7903
E-mail: sakano@ap.t.u-tokyo.ac.jp-9-Fig. 1(a)-(d) ARPES images for 2-5 layer WTe2.

3S-3
Post/Beyond Graphene:
from Topological to 2.5-Dimensional Quantum Materials○Takao Sasagawa
Laboratory for Materials and Structures, Tokyo Institute of Technology, Kanagawa 226-8503, JapanWe are exploring solid-state materials with exotic electronic states and novel properties suchas topological insulators, topological semimetals, and topological superconductors [1-11]. Mostof them have layer-stacking crystal structures, and their single crystals show good cleavage
properties, as similar to graphene. Therefore, their exfoliated nanosheets could be promisingbuilding blocks for 2.5-dimensional quantum materials [12,13]. Keeping “post/beyond
graphene” in mind, the properties, potential applications, and future prospects of the topologicaland associated 2.5-dimensional quantum materials will be discussed.
[1] R. Noguchi, T. Sasagawa, T. Kondo et al., Nature Materials 20, 473 (2021).
[2] T. Machida, T. Hanaguri, T. Sasagawa et al., Nature Materials 18, 811 (2019).
[3] R. Noguchi, T. Sasagawa, T. Kondo et al., Nature 566, 518 (2019).
[4] M.S. Bahramy, T. Sasagawa, P.D.C. King et al., Nature Materials 17, 21 (2018).
[5] K. Iwaya, T. Hanaguri, T. Sasagawa et al., Nature Commun. 8, 976 (2017).
[6] Y.-S. Fu, T. Hanaguri, T. Sasagawa et al., Nature Commun. 7, 10829 (2016).
[7] J. M. Riley, T. Sasagawa, P.D.C. King et al., Nature Nanotech. 10, 1043 (2015).
[8] M. Sakano, T. Sasagawa, K. Ishizaka et al., Nature Commun. 6, 8595 (2015).
[9] Y.-S. Fu, T. Hanaguri, T. Sasagawa et al., Nature Physics 10, 815 (2014).
[10] Y.L. Chen, Z.-X. Shen, T. Sasagawa et al., Nature Physics 9, 704 (2013).
[11] Y.L. Chen, T. Sasagawa, Z.-X. Shen et al., Science 329, 659 (2010).
[12] S. Masubuchi, T. Sasagawa, T. Machida et al., NPJ 2D Mater. Appl. 4, 3 (2020).
[13] K. Takeyama, R. Moriya, T. Sasagawa, T. Machida et al., Nano Lett. 21, 3929 (2021).
Corresponding Author: T. Sasagawa
Tel & Fax: +81-45-924-5366
E-mail: sasagawa@msl.titech.ac.jp- 10 -

3S-4Novel two-dimensional materials stabilized on substrates○Yukiko Yamada-Takamura
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST),
Ishikawa 923-1292, Japan

New two-dimensional (2D) materials stabilized only on substrates, so far, will be introduced.
The first example is a 2D Ge latticehaving a “bitriangular” structure. Our
theoretical
study
onfreestanding
bitriangular lattice demonstrated that the flatband of a kagome lattice can be embeddedin this very different-looking structure [1].
In parallel, we have grown ZrB2(0001) thinfilms on Ge(111) substrates and found that Fig.1 (a) Top view and (b) side view of ball-and-stick
Ge atoms segregate and crystallize into such model of Ge atoms crystallized with bitriangular
bitriangular lattice on the ZrB2 film surface structure on Zr-terminated ZrB2 revealed by total(see Fig.1) [2], unlike when the film is reflection high energy positron diffraction [2].
grown on Si(111) substrate forming a honeycomb lattice of Si, “silicene” [3].
The second example is a new polymorph“trigonal anti-prismatic” phase of monolayer GaSe
which is a semiconducting monochalcogenide (seeFig.2b). Bulk GaSe is known to crystallize in four
polytypes which differ in how layers shown in
Fig.2a are stacked via van der Waals interaction,
but no polymorph has been reported based on
experimental study, including other layered
monochalcogenides sharing the same crystal
structure, such as GaS or InSe. Through crosssectionalscanning
transmission
electronmicroscopy of GaSe thin films grown on Ge(111)substrates, we found that monolayer GaSe withtrigonal anti-prismatic structure (Fig.2b) exist near
the film-substrate interface [4]. Our first-principles Fig.2 (a) Trigonal prismatic and (b) trigonal
study [5] implies that the new phase is metastable, anti-prismatic phases of monolayer GaSe [5].
and can be stabilized by tensile strain.
These findings add new families of materials to be explored in the ever-emerging field of
2D materials.
[1] C.-C. Lee, A. Fleurence, Y. Yamada-Takamura, and T. Ozaki, Phys. Rev. B, 100, 045150 (2019).
[2] A. Fleurence et al., Phys. Rev. B, 95, 201102(R) (2020).
[3] Y. Yamada-Takamura and R. Friedlein, Sci. Technol. Adv. Mater., 15, 064404 (2014).
[4] T. Yonezawa et al., Surf. Interface Anal., 51, 95-99 (2019).
[5] H. Nitta, T. Yonezawa, A. Fleurence, Y. Yamada-Takamura, and T. Ozaki, Phys. Rev. B, 102, 235407 (2020).
Corresponding Author: Y. Yamada-Takamura
Tel: +81-761-51-1570, Fax: +81-761-51-1149,
E-mail: yukikoyt@jaist.ac.jp- 11 -

招待講演Invited Lecture

2I–1 ～ 2I–3

2I-1

Separation of single-wall carbon nanotubes by polysaccharide gelsand their applications.
○Takeshi Tanaka
Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology(AIST), Tsukuba, Ibaraki 305-8565, Japan

Metallic/semiconducting (M/S) separation and chirality separation of single-wall carbon
nanotubes (SWCNTs) are very important for their electrical and optical applications. We havestudied the separations using polysaccharide gels for 15 years. In this presentation, I willsummarize the gel separation and show the recent progress of the separation including
defectless/defective SWCNTs separation and single chirality M-SWCNT separation. First we
used agarose gel and then dextran-based Sephacryl gel to separate M/S and single-chirality
SWCNTs with sodium dodecyl sulfate as a dispersant [1]. Triple-mixed surfactant system on
Sephacryl gel chromatography improved the purities of chirality separation of S-SWCNTs andenantiomer separation of S-SWCNTs [2,3]. When we introduced highly hydrophobic cholate
derivative, sodium lithocholate, to the mixed surfactant system, further improvement of theseparation could be archived [4]. Now we can separate SWCNTs with difference in defectintroduction and also single chirality M-SWCNTs. The separated SWCNTs enabled us toinvestigate photoluminescence quantum yield of SWCNTs corrected for the photon
reabsorption [5]. The separated semiconducting SWCNTs were also used for various
applications, such as ethylene gas sensor [6], photodymnamic therapy [7], and luminescence of
SWCNTs by luciferin/luciferase reaction [8]. Details will be discussed in the presentation.

[1] T.T., H. Liu, S. Fujii, and H. Kataura, Phys. Status Solidi RRL 9, 301 (2011).
[2] Y. Yomogida, T.T., M. Zhang, M. Yudasaka, X. Wei, and H. Kataura, Nature Commun., 7, 12056 (2016).
[3] X. Wei, T.T., Y. Yomogida, N. Sato, R. Saito, and H. Kataura, Nature Commun., 7, 12899 (2016).
[4] Y. Yomogida, T.T., M. Tsuzuki, X. Wei, H. Kataura, ACS Appl. Nano Mater. 3, 11289 (2020).
[5] X. Wei, T.T., S. Li, M. Tsuzuki, G. Wang, Z. Yao, L. Li, Y. Yomogida, A. Hirano, H. Liu, H. Kataura, Nano
Lett. 20, 410 (2020).
[6] S. Ishihara, A. Bahuguna, S. Kumar, V. Krishnan, J. Labuta, T. Nakanishi, T.T., H. Kataura, Y. Kon, D. Hong,ACS Sens. 5, 1405 (2020).
[7] R. Fukuda, T. Umeyama, M. Tsujimoto, F. Ishidate, T.T., H. Kataura, H. Imahori, T. Murakami, Carbon 161,
718 (2020).
[8] T.T., M. Higuchi, A. Hiratsuka, H. Kataura, The 58th FNTG general symposium, 1-3 (2020).
Corresponding Author: T. Tanaka
Tel: +81-29-861-2903, Fax: +81-29-861-2786,
E-mail: tanaka-t@aist.go.jp- 13 -

2I-2

Progresses and future challenges of carbon nanotube production○Suguru Noda1,2,*
1

Department of Applied Chemistry, 2Waseda Research Institute for Science and Engineering,
Waseda University, Tokyo 169-8555, Japan

Carbon nanotubes (CNTs) enable various devices by using carbon, an abundant chemicalelement. They can be synthesized from various carbon sources via both physical vapor
deposition (PVD) and chemical vapor deposition (CVD). Owing to the moderate reaction
temperature and gaseous carbon sources, CVD is considered more practical for low-cost andlarge-scale production. Metal nanoparticles are crucially important as catalyst for promoting
reaction and as template for controlling CNT structure. Catalyst can be either suspended ingas or supported on solid and can be fed in either 2D or 3D (Fig. 1). Significant progress has
been made for production in the past decades. Production method should be selected,
appropriately considering characteristics of each method, for each application target (Fig. 2).
Floating catalyst CVD (Fig. 1a) yields
high-quality CNTs [1] because CNTs growfreely from buckling due to the crowding
effect. Such CNTs are suitable for thin film
applications including transparent electrodes
and solar cells [2]. However the low catalyst
density in the reactor is a bottleneck for mass
Fig. 1. Various CVD processes.
production. Flame-assisted CVD enables
nucleation of catalyst particles at high density
and synthesis of single-wall CNTs
downstream the flame [3].
On-substrate CVD using supported catalyst(Fig. 1c) yields long and pure CNTs with
controlled ensemble structure [4], thus issuitable for direct implementation of CNTs invarious devices. H2O vapor at ppmv level
enhances catalyst lifetime [4], and less active
CO2 at percent level provides the same effectfor large scale [5].
Catalyst supported on powder (Fig. 1b)
enables low-cost and large-scale production ofFig. 2. Map of CNT applications.
CNTs in 3D processes such as fluidized bed [6]. By using ceramic beads with smooth surface,submillimeter-long, >99 wt% pure CNTs can be produced at high yield [7]. Such CNTs enable
light-weight rechargeable batteries without using polymeric binders nor metal foils [8].
To realize wide application of CNTs, environmental burden such as greenhouse gas
emission for their production, use, and disposal should also be assessed and reduced [9].
[1] T. Saito, et al., J. Phys. Chem. B 110, 5849 (2006). [2] R. Xie, et al., Carbon 175, 519 (2021). [3] S. Okada,et al., Carbon 138, 1 (2018). [4] K. Hata, et al., Science 306, 1362 (2004). [5] T. Sato, et al., Carbon 136, 143(2018). [6] Q. Zhang, et al., ChemSusChem 4, 864 (2011). [7] Z. Chen, et al., Carbon 80, 339 (2014). [8] K.
Hasegawa and S. Noda, J. Power Sources 321, 155 (2016). [9] H.Y. Teah, et al., ACS Sustainable Chem. Eng. 8(4), 1730 (2020).
Corresponding Author: S. Noda

Tel&Fax: +81-3-5286-2769, E-mail: noda@waseda.jp- 14 -

2I-3

Developments of the Carbon Nanotube Applications based on Molecular
Adsorption○Tsuyohiko Fujigaya1,2,3
1

Department of Applied Chemistry, Fucultyl of Engineering, Kyushu University, 819-0395, Japan.
2
WPI I2CNER, Kyushu University, 819-0395, Japan.
3
Center for Molecular Systems, Kyushu University, 819-0395, Japan.

Nano-carbon materials such as fullerenes, carbon nanotubes, graphene, and so on are
attractive materials for optical, electronic, mechanical, and biological applications due to theirunique physical properties based on their low dimensionality. In many of these applications,modifications of these nano-carbons with organic molecules and polymers are effective way totune or to add their functions or properties, in which proper molecular design, type ofmodification (i.e. non-covalent or covalent), geometry and amount are key parameter to finely
control the functions and/or properties.
We have been developed polymer-wrapped or molecular-doped nano-carbons based on noncovalent modifications for biological [1-3], thermoelectric [4,5], fuel cell [6-8] andreinforcement [9] applications. In this presentation, preparation, characterization, and effect ofthe polymer-based or molecular-based modifications for these applications will be introduced.
Polymer-wrapping and molecular-doping enable the increases of the catalyst efficiency of thefuel cell, catalyst durability of fuel cell, doping stability in the thermoelectric materials andeffective load transfer in the filler reinforced plastics.

[1] T. Fujigaya et al. ACS Appl. Bio Mater., 4, 5049–5056 (2021).
[2] T. Fujigaya et al. ACS Appl. Nano Mater, 2, 4703-4710 (2019).
[3] T. Fujigaya, et al. J. Am. Chem. Soc. 140, 8544-8550 (2018).
[4] T. Fujigaya et al. J. Mater. Chem. A, 9, 12188–12195 (2021).
[5] T. Fujigaya, et al. Synthetic Metals, 225, 76-80 (2016).
[6] T. Fujigaya et al. J. Power Source 496, 229855 (2021).
[7] T. Fujigaya, et al. Sci. Rep. 5, art. No.16711 (2015).
[8] T. Fujigaya, et al.Adv. Mater., 25, 1666-1681 (2013).
[9] T. Fujigaya, et al. Polym. J. 51, 921–927 (2019).
Corresponding Author: T. Fujigaya
Tel: +81-92-802-2842, Fax: +81-92-802-2842,
E-mail: fujigaya.tsuyohiko.948@m.kyushu-u.ac.jp- 15 -

一般講演
General Lecture

2–1 ～ 2–7
3 – 1 ～ 3 – 20

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2-4Single chirality separation of metallic single-wall carbon nanotubes using
gel-column chromatography○Hiromichi Kataura1, Mayumi Tsuzuki1, Takeshi Tanaka1
1

Nanomaterials Research Institute, AIST, Tsukuba Ibaraki 305-8565, Japan

It is obvious that obtaining single-chirality single-wall carbon nanotubes (SWCNTs) is very
important for understanding their physical properties and developing suitable applications.
Many reports on the structural sorting of SWCNTs have been reported so far. However, mostreports focus on semiconducting SWCNTs rather than metallic SWCNTs probably due to theirhigh importance in electronic device applications and easiness of sorting. This report shows asingle-chirality separation of metallic SWCNTs using gel-column chromatography.
At the beginning stage of SWCNT sorting using gel medium, it was thought that only
semiconducting SWCNTs would be adsorbed on the polysaccharide gels when sodium dodecyl
sulfate was used as a dispersant. This selective adsorption resulted in metal/semiconductor
separation. However, adsorption mechanism was not well understood at that time. Today, we
have a better understanding of the adsorption mechanism and have more precise control over
the adsorption process. In this study, we succeeded in adsorbing metallic SWCNTs in the gelcolumn. When the metallic SWCNTs were adsorbed on the column, interestingly, the elution
behaved very much like the semiconducting
SWCNTs. Diameter selective elution can beachieved simply by stepwise increasing
concentration of the surfactant. As a result, six
metallic species such as (5,5), (7,4), (8,2), (8,5),(9,3), and (6,6) could be sorted from SG65i,
CoMoCAT. This method can be applied to other
SWCNT sources such as HiPco. Fig. 1 shows
optical absorption spectra of armchair SWCNTs,(5,5), (6,6), and (7,7). Since the armchair species
show similar spectral shapes except E11
wavelength, assignment is very easy. For the chiralmetallic SWCNTs, however, the assignment is noteasy, because we cannot use photoluminescence
mapping that has been a powerful tool for thechirality assignment of semiconducting SWCNTs. Fig. 1 Optical absorption spectra of armchair
We will discuss resonance Raman results where the
SWCNTs (5,5), (6,6), and (7,7).
anomalous overtone series of radial breathingmodes were observed in chiral metallic SWCNTs.
Acknowledgements
This work was supported by JSPS KAKENHI, grant No. 20H05668, Japan and JST
CREST, grant No. JPMJCR18I5, Japan.
Corresponding Author: H. Kataura
Tel: +81-29-861-2551, E-mail: h-kataura@aist.go.jp- 20 -

2-5
Design of multi-step gas-phase CVD reactor
for the synthesis of high-quality single-walled carbon nanotube
żShunsuke Sakurai1, Takashi Tsuji1, Guohai Chen1, Maho Yamada1, Jaeho Kim2,
Hajime Sakakita2, Yoshiki Shimizu3,4, Kenji Hata1, Don N. Futaba1
1

CNT-Application Research Center, AIST, Tsukuba, Ibaraki 305-8565, Japan
Innovative Plasma Processing Group, Research Institute for Advanced electronics andPhotonics, AIST, Tsukuba, Ibaraki 305-8568, Japan
3
Nanomaterials Research Institute, AIST, Tsukuba, Ibaraki 305-8565, Japan
4
AIST-UTokyo Advanced Operando-Measurement Technology Open Innovation Laboratory(OPERANDO-OIL), AIST, Kashiwa, Chiba 227-8589, Japan
2

Among various production techniques of the carbon nanotube (CNT), chemical vapor
deposition using floating catalyst (FCCVD) has been extensively studied, especially forelectronic applications based on the excellent performances of high crystalline CNTs. FCCVD
consists of two processes: the formation of catalyst nanoparticle (NP) aerosol and the following
CVD of CNT on the pre-formed catalyst NP, and in the most cases the above two processes arecarried out spontaneously in the one thermal reactor chamber. Although various attempts toseparately pre-form catalyst NPs by widespread methods such as spark, microplasma, flame,and colloid injection has been also reported, the control on the aggregation among pre-formed
NPs is commonly required, especially when the number density of NPs are huge.
Recently, we reported a tiny gas-phase CNT synthesis reactor utilizing microplasma whichenables the localized deposition of high quality CNTs [1,2]. In this study, a novel design ofmulti-step gas-phase CVD reactor utilizing microplasma for the pre-formation of catalyst NP
is demonstrated to realize fast mixing with carbon feedstock within a few milliseconds to avoid
aggregation. Specifically, a microplasma reactor (inner diameter of 0.8 mm) has been inserted
into a thermal reactor at high temperature up to 1100 ºC (Fig. 1a). Importantly, both catalyst NP
and the pre-heated carbon feedstock have been supplied to the confined space (ĳ  mm)
designed by the fluid dynamics simulation to enable the fast mixing (Fig. 1b and c).
Successfully, high-crystalline single-walled CNT has been synthesized (Fig. 1d).

Fig. 1 Figure caption is definitely needed.
Fig. 1 (a) Schematic illustration of the reactor. (b) Conceptual design of gas mixing between catalyst NP
and carbon feedstock. (c) Typical simulation result showing the distribution of catalyst multiplied by carbon
feedstock concentration. (d) Photograph (upper) and SEM image (lower) of the synthesized CNT.
[1] T. Tsuji, S. Sakurai et al. Carbon, 173, 448-453 (2020).
[2] T. Tsuji, S. Sakurai et al. ACS Omega, DOI: 10.1021/acsomega.1c01822.
Corresponding Author: S. Sakurai
Tel: +81-29-861-6205, Fax: +81-29-861-4851
E-mail: shunsuke-sakurai@aist.go.jp- 21 -

2-6
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(2/74)/' 3)&./-*.","-/5.4/'-*8&%7*4)&4)"./,)&,0&%4/*-02/6&4)&(2/74)2"4&    !01;?7:3?);8):<1)44@;=887:<-,*@<0-%!;=887:<-,8:7/:)5A<0--127"61>-:;1<@-;-):+0:)6,16/:72-+<.7:=4<1>)<176)6,6>-6<1767.-?)675)<-:1)4;B'( )=/05)6-<)4 +1-6+-   ' ( >7=:1;-<)40-50@;    ' ( &)<;=,)-<)40@;0-5-<<   

' ( !):=@)5)-<)4884 =:. +1   ' ( ! ):=@)5) -< )4 1)5 -4)< )<-:     

                  - 22 -

2-7
Synthesis and Characterization of Various One-dimensional van der Waals
Heterostructures○Wanyu Dai1, Yongjia Zheng1, Keigo Otsuka1, Shohei Chiashi1, Rong Xiang1, Shigeo
Maruyama1
1Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan

We recently presented the experimental synthesis of one-dimensional (1D) van der Waals(vdW) heterostructures which includes single-walled carbon nanotubes (SWCNTs), boron
nitride nanotubes (BNNTs) and molybdenum disulfide nanotubes (MoS2NTs) [1]. Further, thenucleation and crystal growth behaviors over these highly curved nanotube surfaces were
investigated [2]. The atomic model, TEM image, and EELS mapping of the SWCNT-BNNTMoS2NT heterostructure are shown in Fig. 1 [2]. By using film samples, we have demonstrated
the strong photoluminescence (PL) from monolayer MoS2NT and quenching of PL by SWCNT
through thin BNNT [3]. Furthermore, by using a micro-meter long single heterostructure, wehave demonstrated that naturally p-doped SWCNT and n-type MoS2NT becomes a radial
semiconductor–insulator–semiconductor (S-I-S) tunneling heterojunction diode [4]. We canimagine various optical and electronic devices with such 1D heterostructures [5]. The 1D
heterostructures which synthesized by shell-by-shell growth process have the freedom to alter
the shell combination [2], while great numbers of transition metal dichalcogenides (TMDCs)
nanotubes might be synthesized following similar strategies to MoS2 growth [6]. Hence, thecontrolled synthesis process of 1D vdW heterostructures with different shell combination areof fundamental research interest [7]. Here we present the chemical vapor deposition (CVD)synthesis of 1D vdW heterostructures based on tungsten disulfide (WS2) and niobium disulfide(NbS2). Also, synthesis process of MoS2 based 1D vdW heterostructures was re-optimized.
From observations with transmission electron microscopy (TEM), all the TMDC shells in theseheterostructures are verified being highly crystalized. This work indicates that CVD may be auniversal synthesis method for 1D vdW heterostructures, and could be applied for a wide varietyof TMDCs.
Part of this work was supported by
JSPS KAKENHI Grant Number
JP20H00220 and by JST, CREST Grant
Number JPMJCR20B5, Japan.
[1] R. Xiang, et al., Science, 367, 537 (2020).
[2] Y. Zheng, et al., PNAS, (2021), submitted.
[3] M. Liu, et al., ACS Nano, 15, 8418 (2021).
[4] Y. Feng et al., ACS Nano, 15, 5600 (2021).
[5] R. Xiang, et al., Small Sci., 1, 2000039(2021).
[6] J. Zhou, et al., Nature, 556, 355 (2018).
[7] S. Cambre, et al., Small, (2021), in press.
Corresponding Author: S. Maruyama
Tel: +81-3-5841-6421, Fax: +81-3-5800-6983
E-mail: maruyama@photon.t.u-tokyo.ac.jp

Fig. 1 (A) Atomic model, (B) TEM image and (C) EELS
mapping of a SWCNT-BNNT-MoS2NT hetero-structure(green, blue, red, yellow indicate the elemental distributionof carbon, boron, nitride, sulfur, respectively) [2].

- 23 -

3-1
Chirality isolation of single-walled carbon nanotubes by the phasetransition of a thermoresposive polymer
Eriko Shimura1, Tomomi Tanaka1, Yuki Kuwahara2, Takeshi Saito2, Toshiki Sugai1,○Shota Kuwahara1
Department of Chemistry, Toho University, Funabashi, Chiba 274-8510, Japan
Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology(AIST), Tsukuba, 305-8565, Japan
1

2

Recently, we demonstrated the sorting of chirality-selective semiconducting single-walledcarbon nanotubes (SWCNTs), which is highly attractive for creating nanocircuits and thin filmtransistors from nanomaterials, by exploiting the phase transition of poly(N-isopropyl acryl
amide) (PNIPAM), a well-known thermoresponsive polymer (Fig. 1a) [1]. Although the simple
procedure and continuous use of PNIPAM have a high potential for the mass production of
SWCNTs with a specific electronic structure, knowledge of efficient single-chirality sorting
methods with mixed surfactant systems is not applicable since the available surfactant is limited
to bile acid for the phase transition of PNIPAM. In this work, regarding the chiral isolation of
SWCNTs, we explored experimental conditions by controlling the interaction among PNIPAM,
sodium cholate (SC) and SWCNTs [2].
A dispersion of SWCNTs in aqueous SC solution was added to PNIPAM solution withadditive. Then, the mixed solution was heated to 45 °C and incubated for 15 minutes. The
obtained liquid phase was collected, and characterized by UV-vis-NIR spectrophotometer(SHIMADZU, UV-3600) and a Shimadzu NIR-PL system (CNT-RF).
After optimizing the PNIPAM and SC concentrations, tetraborate buffer solution was used
for the additive. As shown in Fig. 1b, the sorting solution exhibited a bright PL peak that showed
an S11 emission at 883 nm and an S22 excitation at 590 nm, which corresponded to (6,4)
nanotubes. The PNIPAM sorting mechanism was explained by the difference in the micelleconfiguration on SWCNTs and the hydrophobic collapse of PNIPAM in the presence of a
sodium salt.

Fig. 1 (a) Images displaying the evolution of the aggregation and shrinkage of PNIPAM, including thedispersion of SWCNTs and SC. (b) PL excitation map for the sorting solution in the presence of atetraborate buffer solution in D2O.
[1] E. Shimura et al. Chem. Commun., 54, 3026 (2018). [2] E. Shimura et al. RSC Adv., 10, 24570 (2020).
Corresponding Author: S. Kuwahara
Tel: +81-47-472-4442, Fax: +81-47-472-4442, E-mail: syouta.kuwahara@sci.toho-u.ac.jp- 24 -

3-2

Patterning and Photo-thermal Sensing Applications ofSuspended, 2D, Micro-scale CNT film array○Daichi Suzuki, Nao Terasaki
Sensing System Research Center, AIST, Saga 841-0052, Japan

Research and development of soft sensors is a core objective toward the realization ofSociety 5.0 centered around human augmentation and soft robotics. The advantages of a carbon
nanotube (CNT) film compared to other soft materials are the ultra-wideband light absorption
ranging from the millimeter wave band to the near infrared band due to the plasmon resonance,
and the high conversion efficiency of the absorbed light (heat) to an electrical signal. By
utilizing the photo-thermo-electric effect of a CNT film, we previously have developed aterahertz (THz) soft sensor and have demonstrated non-destructive quality inspections (Fig. 1)[1, 2]. This time, we report our recent results of a self-aligned filtration process for a suspended,
2D, micro-scale CNT film array and which applications as a THz camera patch sheet that canbe cut freely and be attached according to the shapes of the measured objects [3].
The point of this filtration process is to directly form CNT films according to the pattern,
instead of a top-down processing after the CNT film formation. First, holes are formed in apolyimide film, which is the support substrate of the CNT film, by laser ablation processing.
By filtrating a CNT dispersion through a composite of the patterned polyimide film and amembrane filter, CNTs are filtrated only at the holes on the polyimide film in a self-aligned
manner, and thereby CNT films are formed according to the pattern. After forming and drying
the CNT films, when the membrane filter is peeled off, the suspended CNT films supportedwith the edges of the holes of the polyimide film is formed. The size and array position of thesuspended CNT film can be freely adjusted in micro to centimeter size according to laser
processing. This technique can be applied to variety of applications, i.e., THz cameras by 2D
sensor arrays (Fig. 2), thermoelectric power generators with micro-scale thermocouples
connected in series, and optical components
such as array antennas and polarizers. We thus
expect that this technique can widely advance
the CNT device research progress.
[1] D. Suzuki et al. Nat. Photon., 10, 809–813 (2016).
[2] D. Suzuki et al. Carbon, 162, 13–24 (2020).
[3] D. Suzuki et al. Adv. Funct. Mater., 31, 2008931(2021).

Fig. 1. THz soft sensor with a CNT film. The photothermo-electric voltage V is generated, where S is theSeebeck coefficient of the CNT film and T is the thermal
Fig. 2. THz camera patch sheet with a suspended, 2D,
gradient induced by THz irradiation, respectively.
micro-scale CNT film array. A few tens of camera
elements are combined in a single flexible sheet.
Corresponding Author: D. Suzuki
Tel: +81-942-81-3620, Fax: +81-942-81-4018, E-mail: daichi.suzuki@aist.go.jp- 25 -

3-3
Novel excitonic features of moiré excitonin twisted van der Waals heterostructures○Keisuke Shinokita1, Yuhei Miyauchi1, Kenji Watanabe2, Takashi Taniguchi3, and Kazunari
Matsuda1
Institute of Advanced Energy, Kyoto University, Uji 611-0011, Japan
Research Center for Functional Materials, NIMS, Tsukuba 305-0044, Japan
3
International Center for Materials Nanoarchitectonics, NIMS, Tsukuba 305-0044, Japan
1

2

Excess energy (meV)

PL intensity (a. u.)

Atomically thin transition metal dichalcogenides (TMDs) is ideal two-dimensional systemand possesses intriguing optical properties related to valley degrees of freedom [1]. Van der
Waals heterostructures composed of TMDs are a fascinating platform to engineer the opticallygenerated excitonic properties through moiré patterns towards novel quantum phenomena.
The moiré pattern as a periodic trap potential can give rise to spatially ordered ensembles ofzero-dimensional exciton (moiré exciton), which offers the possibility for dense coherent
quantum emitters and quantum simulation of many-body physics [2].
Here we studied the novel moiré exciton properties in a twisted WSe2/MoSe2 heterobilayer
based on near-resonant photoluminescence excitation (PLE) spectroscopy. Figure 1(a) shows
the photoluminescence (PL) spectra with different excitation energies of 1.356 and 1.366 eV.
Several peaks observed in the PL spectra reflect the
response of the interlayer exciton trapped with the(a)moiré potential, or moiré exciton. The PL spectral
1500
Eexc.=1.366 eV
shape strongly depends on the excitation energy,
suggesting highly selective excitation of a specific1000
moiré exciton under resonance excitation
1.359 eVconditions. The resonance behavior is clearly500
shown in the 2D color map of excitonic emissions
1.356 eV
as a function of excess energy in Fig. 1(b). The
0
specific moiré exciton emission was enhanced
1.31
1.32
1.33
1.34
Emission energy (eV)under excitation with ~24 and ~48 meV excess
0 200 400(b)energy, while the PL intensities are significantly
PL intensity (a. u.)
weak under off-resonance conditions. The energy
80
difference of 24 meV observed in the PLE
resonance is close to the energy of the A1’ phonon
60
mode in MoSe2 and A1’+E’ phonon modes in WSe2
at 30 meV (~240 cm-1), suggesting that phonon
40
resonances are candidates to explain the resonancefeatures. The slight smaller energy of 24 meV
20compared with Raman signal of 30 meV would
reflect the zero-dimensionality of moiré exciton
1.31
1.32
1.33
1.34
[3].
Emission energy (eV)[1] K. Shinokita et al., Adv. Funct. Mater. 29, 190260 (2019).
[2] K. Seyler et al, Nature 66, 567 (2019).
[3] K. Shinokita et al., Nano Lett. in press.
Corresponding Author: K. Shinokita
Tel: +81-774-38-3465 Fax: +81-774-38-3467,
E-mail: shinokita.keisuke.4r@kyoto-u.ac.jp- 26 -

Fig. 1. (a) PL spectrum obtained under near-resonant
excitation from Eexc.=1.356 to 1.366 eV. The blacklines are fitted with multiple Lorentz functions. (b)2D color map of PL intensity as a function of excessenergy. The black dashed lines show excess energyof 24 and 48 meV.

3-4
Controlled Removal of Surfactants from Double-Walled Carbon Nanotubes
for Stronger p-Doping Effect and its Demonstration in Perovskite Solar
Cells○ Jeong-Seok Nam1, Ahmed Shawky2, Seungju Seo2, Rong Xiang2, Yutaka Matsuo2,
Shigeo Maruyama2, Il Jeon1
1
2

Department of of Chemical Materials, Pusan national University, Busan 46241, Republic of Korea
Department of Mechanical Engineering, School of Engineering, The University of Tokyo, Tokyo 1138656, Japan

Double-walled carbon nanotubes(DWNTs) have shown the potential as a promisingalternative to conventional transparent electrodes owing to solution-processability as well as
high conductivity and transparency.[1] However, their DC to optical conductivity ratio islimited by surrounding surfactants preventing p-doping of the carbon nanotubes.[2] To
maximize the doping effectiveness, the surfactants are removed from double-walled carbon
nanotubes with negligible damage to the nanotubes by calcinating in Ar atmosphere. The
effective removal of the surfactants was evidenced by various analyses and the results showthat 400 °C is the optimal temperature. The conductivity improvement of the double-walledcarbon nanotube films by triflic acid increased from 31.9% to 59.7% after the removal of thesurfactants. Using the surfactant-removed p-doped solution-processed transparent electrodes,
inverted-type perovskite solar cells are fabricated and a power conversion efficiency of 17.7%
without hysteresis is displayed. This work advances the transparent conductor application of
double-walled carbon nanotubes as the efficiency is highest among the reported carbon
nanotube electrode-based perovskite solar cells and solution-processable transparent electrodebased solar cells to date.
[1] I. Jeon, et al. J. Phys. Chem. Lett, 8, 5395 (2017)[2] I. Jeon, et al. Adv. Energy Mater, 9, 1901204 (2019)
Corresponding Author: I. Jeon
E-mail: Il.jeon@spc.oxon.org- 27 -

3-5
Carbon Nanotube Mask Filters and their Hydrophobic Barrier andHyperthermic Antiviral Effects on SARS-CoV-2○Sangsu Lee1, Jeong-Seok Nam1, Jiye Han1, Qiang Zhang2, Esko I. Kauppinen2, Il Jeon1
1

Department of Chemical Materials, Pusan National University, Busan 46241, Republic of Korea
2
Department of Applied Physics, Aalto University School of Science, Aalto FI-00076, Finland

COVID-19, caused by SARS-CoV-2, is extremely serious as it mutates naturally over a shortperiod of time. This disease infection spreads via airborne saliva droplets, and mask filters caneffectively block these particles. While the vaccine against the SARS-CoV-2 has beendeveloped recently, the mutations are far from being resolved. Therefore, experts from manyorganizations, including the WHO, have stated that wearing a face mask is the one of the mosteffective methods of preventing COVID-19 both before and after vaccination. Targeting
protection against SARS-CoV-2, our investigation and discussion focus on five key aspects: 1)
industrial viability, 2) hydrophobicity, 3) breathability, 4) anti-viral effect and 5) reusability.
In this study, commercially available spunbonded/melt-blown/spunbonded polypropylene(SMS) filter-based face masks are used as the control sample. Owing to the roll-to-rollprocessability of the CNT film, the CNT filter could be added on top of the SMS filter or replace
one of the existing layers without a significant increase in production cost. The CNT filter
exhibited stronger hydrophobicity uniformly across the area of the filter compared with theconventional SMS filter. The average water contact angle of the CNT filter (131.7° ± 0.87°)
was approximately 7° greater than that of the SMS filters (124.6° ± 3.07°), and 75% of the CNT
filter area exhibited a water contact angle above 130°. In addition, the CNT filter displayed along durability of greater than 5 d without reduction in hydrophobicity under constant
application of the water droplets, owing to the exceptional mechanical strength of the nanotubes.
OTR showed that the addition of a CNT filter does not undermine breathability, while
demonstrating a better blocking effect against the intruding airborne saliva droplets.
The physical porosity of the CNT filter observed by scanning electron microscopy (SEM)
shows that the CNT network has a smaller pore size of less than 100 nm on average comparedwith the SMS filters. Considering that the size of a single SARS-CoV-2 varies between 100 nm
and 200 nm, it can easily be inferred that the CNT filter also blocks the intrusion of the virus.
The high thermal conductivity of the CNT filter induced a hyperthermal anti-viral effect, as
evidenced by the swift temperature rise to 65 °C in less than 5 min when the situation of themask being worn outside was simulated. Inactivation of the viruses on the heated CNTs was
confirmed by both SEM and transmission electron microscopy (TEM) imaging of denatured
viruses. It transpires hyperthermic antiviral effects, which offers stronger protection against thevirus, as well as reusability.
In brief, we are positive that aerosol-synthesized CNTs can be viable on an industrial levelwithin a short time. Its effectiveness in protecting against SARS-CoV-2 in every key aspect of
the face mask proves that the CNT material has promising potential when used solely or in
combination with conventional face masks according to the results of this work. The aerosolsynthesized carbon nanotube filter warrants its viability, reinforcing the fight against the
COVID-19 pandemic.
Corresponding Author: I. Jeon, E. Kauppinen
E-mail: il.jeon@spc.oxon.org (I.J.), esko.kauppinen@aalto.fi (E.K.)- 28 -

3-6
Output power enhancement of stretchable, transparent triboelectric
nanogenerator by charge trapping layer○Masahiro Matsunaga1, Jun Hirotani2, Yutaka Ohno1,2
1Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8601,
Japan
2
Department of Electronics, Nagoya University, Nagoya 464-8603, Japan

Triboelectric nanogenerator (TENG), a kind of mechanical energy harvester, is a promising
candidate for self-powered electronics because of its outstanding features such as simple
structure, high-output capability, and diverse material selection [1]. Previously, we havereported stretchable and transparent TENG using carbon nanotube thin film as a transparent
electrode for wearable self-powered electronics [2]. High-output power of 8 W/m2 with handtapping was obtained by modifying the electronegativity of the elastomer surface with CF4
plasma treatment. However, further enhancement of the output power is required for therealization of self-powered electronics. In this study, we introduced a charge trapping layer toenhance the output power.
Figure 1 shows a schematic of the TENG with a charge trapping layer. The charge trapping
layer captures the charges generated by the triboelectrification, so that, total charge density at
the surface of the TENG is increased. The charge trapping layer was formed bypolydimethylsiloxane (PDMS) / SWNT mixture and inserted into the top elastomer layer. The
simultaneous output power density as a function of the external load resistance was shown in
Fig. 2. Here, the external mechanical force of 5 N at 2 Hz was applied using a linear motor. The
output power density was enhanced from 28 mW/m2 to 51 mW/m2 by introducing the charge
trapping layer. We also obtained a high output power density of 13.6 W/m2 by hand tapping(approximately 70 N, 2 Hz). The detail will be discussed in the presentation.
[1] Z. L. Wang, Mater. Today 20, 74 (2017).
[2] M. Matsunaga, et al., Nano Energy 67, 104297 (2020).

w/o charge trap layer
w/ charge trap layer

Power density (mW/m2)

50

Triboelectric material (Nitrile)
Charge trap layer
PDMS
CNT
electrode

e R

40
30
20
10
0

10k

100k

1M

10M

100M

Load resistance (W)Fig. 1 Schematic of TENG with charge trapping layer.

Fig. 2 Power density as a function of the load
resistance.

Corresponding Author: M. Matsunaga
Phone: +81-52-789-5230, Fax: +81-52-789-5455
E-mail: matsunaga.masahiro@i.mbox.nagoya-u.ac.jp- 29 -

3-7
Improvement in Thermal Diffusivity of CNT/Polymer Composite Films via
Orienting CNTs by Robotic Dispenser○Nikita Kumari, Ryo Abe, Naofumi Okamoto, Manish Pandey, Masakazu Nakamura
Division of Material Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho,Ikoma, Nara 630-0192, Japan

Studies reveal that isolated Carbon Nanotubes (CNTs) exhibit very high and anisotropic
mechanical, electrical, and thermal characteristics. However, bulk fabrication of aligned CNT
networks is preferred for their practical applications. In bulk, CNTs are entangled due to theirmechanical flexibility and strong van der Waals interactions. Therefore, to utilize their optimum
potentiality, film fabrication with uniaxially aligned CNTs are significant. Recently, we havereported a method for fabricating oriented CNT/polymer composite films through a
programmable robotic dispenser, as shown in Fig. 1 (a) [1]. Here the ink is extruded through anarrow needle, and ribbon-like films can be prepared on any substrates up to any length.
In this work, the CNT/polymer composite films were fabricated. The degree of CNTalignment in ribbon-like films was characterized by mapping the G-band intensity ratio ofpolarized Raman spectra, Fig. 1 (b – d). CNT orientation was found to be along the drawing
direction. Here the orientation was sensitive to casting parameters such as dispensing
parameters, wettability of the ink to the substrate, and ink composition, and their optimization
will be reported indetail. The effect of
CNT alignment onthethermaldiffusivity was alsostudied, and morethanfour-foldincrement in thermal
diffusivity
wasobtained comparedto the isotropic films.
In addition to this, the Fig. 1. (a) Schematic for film casting by robotic dispenser and digital image ofrepresentative films. Polarized Raman mapping of G-band intensity with laser
effect of CNT length polarized (b) along (I0o) and (b) orthogonal (I90o) to casting direction. (c) I0o/I90o
was also crucial for corresponds to CNT orientation in the film. X- and Y-axis are along the ribbon width
obtaining the optimum and length.
thermal transport. The
impact of various other parameters concerning dispersion and ink composition as well as film
fabrication will be discussed in detail.
Reference:[1] M. Pandey et al., Appl. Phys. Express 13, 065503 (2020)
Acknowledgment:This work was supported by JST CREST Grant Number JPMJCR18I3, Japan.
Corresponding Author: M. Nakamura
Tel: +81-743-72-6031, Fax: +81-743-72-6047,
E-mail: mnakamura@ms.naist.jp- 30 -

3-8
Hall effect in gated single-wall carbon nanotube films○Yohei Yomogida1, Kanako Horiuchi1, Ryotaro Okada1, Hideki Kawai1, Yota Ichinose1, Hiroyuki Nishidome1,
Kan Ueji1, Natsumi Komatsu2, Weilu Gao3, Junichiro Kono2,4,5, Kazuhiro Yanagi1
123

Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan

Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, USA

Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT 84112, USA
4
5

Department of Physics and Astronomy, Rice University, Houston, Texas 77005, USA

Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, USA

Hall-effect measurements are fundamental methods to evaluate the type and density of charge
carriers in crystalline materials. However, it is known that Hall measurements can lead toerroneous carrier types and densities when hopping carriers dominantly contributed to thecharge transport [1]. Therefore, in hopping conduction systems, it is essential to compare thecarrier types and density with those obtained by other methods such as field-effect transistor(FET) measurements. Thin films composed of single-wall carbon nanotubes (SWCNTs), which
are important for fundamental research and device applications, are also known to be hopping
conduction systems. Thus, in interpreting Hall effect in SWCNT films, one must carefully
assess the contribution of hopping carriers. However, these issues have not been addressed inprevious Hall-effect studies of SWCNT films. In this study, we evaluate the validity of the Hall
effect in SWCNT films by comparing the results of Hall effect with those of FETs.
Transistors with standard Hall bar configuration were fabricated using films of different
SWCNTs, such as metallic, semiconducting, and unsorted SWCNTs. The carrier types anddensity were controlled by ionic liquid gating. Figure 1 shows transfer characteristics of themetallic SWCNT device. We observed clear n- and p-type conduction. Hall measurements were
performed on such gated sample. Figure 1 shows the measured Hall voltage of the metallic
SWCNT device in the n-type and p-type regions. The magnetic field dependence corresponds
to the doped carriers, indicating that the type of carrier can be correctly estimated by the Hall
effect. On the other hand, regarding the carrier density, the Hall-determined carrier densities(~1017 cm-2) were significantly overestimated compared to the FET-determined carrier densities(~1015 cm-2). This overestimation behavior was observed in all samples, and the degree ofoverestimation varied among the samples.

Fig. 1(left) Transfer characteristics of the metallic SWCNT device. Channel conductance G is plotted asa function of reference voltage VR. (center, right) Hall voltages VHall of the metallic SWCNT device, plotted
as a function of magnetic field. Data in the n-type (center) and p-type regions (right) are shown.
[1] T. Uemura et al., Phys. Rev. B 85, 035313 (2012), H. T. Yi et al., Sci. Rep. 6, 23650 (2016).

- 31 -

3-9
Intuitive Correlations between Heat and Charge-Carrier Flows in Vertical
Devices Using Single-Walled Carbon Nanotube Films○Kan Ueji1, Nobuhiro Muto1, Yuya Matsuoka1, Yota Ichinose1,
Yohei Yomogida1, Takashi Yagi2, Jana Zaumseil3, Kazuhiro Yanagi1
1Department of Physics, Tokyo Metropolitan University, Tokyo 192-0372, Japan
National Metrology Institute of Japan, National Institute of Advanced Industrial Science andTechnology, Tsukuba, Ibaraki 305-8563, Japan
3
Institute for Physical Chemistry and Centre for Advanced Materials, Universität Heidelberg, D-69120
Heidelberg, Germany
2

Flexible devices composed of carbon or organic materials have attracted attention because
the Internet-of-Things society utilizes flexible devices as ubiquitous sensors, electronics, andthermoelectric generators. However, flexible materials are more intractable than inorganic
materials for fabricating ultrafine structures on the same plane. To handle this issue, one
approach is to use a transistor with a vertical channel, i.e., the film thickness of the flexible
material is regarded as the channel direction in the device design. This vertical design using
flexible materials was first proposed in 1994 [1] and has recently been shown to have equivalent
performance to conventionally lateral transistors.
Single-walled carbon nanotubes (SWCNTs) are promising for thermoelectric phenomena
based on the Seebeck effect because of their low dimensionality [2] and high chemical stability.
To evaluate the thermoelectric figure-of-merit, a measurement technique is required for the
Seebeck coefficient, electrical conductivity (σ), and thermal conductivity (κ). We havedemonstrated the evaluation of the σ-κ relationship of the semiconducting SWCNT film
depending on its Fermi-level tuning by electrolyte gating and time-domain thermoreflectance(TDTR) [3]. However, the measurement directions are different: σ and κ correspond to thelateral and vertical directions, respectively. To overcome this direction problem, we employ avertical electrolyte-gated transistor by which the semiconducting SWCNT film is doped overall[4]. We also conducted trial investigations on the σ-κ relationships of two kinds of SWCNT
films in vertical devices without electrolytes. The first involves semiconducting SWCNTs
separated from the arc-discharge CNTs using an ultracentrifuge; moreover, the film wastransferred to the device (sample No.1). The second is a (6,5) CNT separated from CoMoCATby the polymer wrapping method, where the film was fabricated by aerosol printing (sample
No.2).
The vertical devices and TDTR systems reveal that both films have low κ and low σ (No.1:
0.1 Wm−1K−1, 5 × 10−2 Sm−1; No.2: 0.04 Wm−1K−1, 8 × 10−6 Sm−1.), thus indicating that thedominant heat flows in both films are by phonon transport. Furthermore, the κ of No.1 is morethan twice that of No.2, suggesting that the method used to fabricate the film affects its internal
structure. The details of this study will be further discussed during the presentation.
[1] Y. Yang et al., Nature 372, 344 (1994). [2] L. D. Hicks et al., Phys. Rev. B, 47, 16631 (1993)[3] K. Ueji et al., APL., 117, 133104. (2020). [4] M. Rother et al., ACS Appl. Nano Mater. 1, 3616 (2018)
Corresponding Author: K. Ueji and K. Yanagi
E-mail: kueji@tmu.ac.jp (K.U.), yanagi-kazuhiro@tmu.ac.jp (K.Y.)- 32 -

3-10
Dispersed 2.6nm Quasi-Spherical Diamond Particles：A Versatile Starting
Material in Nanotechnology○Eiji Ōsawa1, Toshihiko Tanaka2 and Amanda Barnard3
1

NanoCarbon Research Institute Limited, AREC, Dept. Fiber Sci. Eng., Shinshu University, Ueda,
Nagano 386-8567, Japan. 2Department of Chemistry and Biochemistry, National Institute of Technology,

Fukushima College, Iwaki, Fukushima, 970-8034, Japan. 3Australian National University, Research School ofComputer Science, Acton ACT 2601, Australia.

As nanotechnology keeps expanding, and fullerenes and carbon nanotubes have been
exhaustively worked out, it is desirable to have a few more new nanoparticles that are readily
available and can be used as our common starting material [1]. Actually, many of us regarded
detonation nanodiamonds (DND) an ideal material for this purpose and studied themextensively. However, we found that DNDs could be further split into 4~5nm particles withlarge excess of 30μm zirconia beads in a commercial beads-milling setup in 2005 [2]. However,then it took very long time for us to reach the true PPDND: we had to solve quite a few new
problems and phenomena unique to nanoparticles. In the meantime, we observed remarkableincrease in the toughness of solid matrices when trace amounts of PPDND were dispersed inthem. In view of the brittle fracture in practically all of the artificial solid materials including
plastics and ceramics, the toughening effect of PPDND suggests tremendous usefulness that we
can even think of replacing iron with PPDND-dispersed PET. All these details will be reported
herein and also in the forthcoming papers.
Synthesis. DND agglomerates were dispersed in water to 4% concentration to give fairly
stable suspension. Beads-milling of the suspension with an Ultra Apex Mill (made in Kotobuki
Giken Kogyo Co.) easily disintegrated DND into its PPs to give translucent black aqueous
solution! It takes 2 hours to process 20g of DND into the PP solution in quantitative yield.
Size and Shape of PPDND. Average hydrodynamic size of 2.6±0.5nm proved close to one-half of theinitially given DND size of 4 to 5nm. The dimer
bonds must have been abnormally strong. As thediamonds are well known for their rich metamorphic
varieties, which should have close stabilities, the
1. A favored candidate for a representative
final black PPDND solution must contain Fig.
structure of PPDND. Left: Line drawing of
considerable number of isomers of PPDND. For truncated rhombicuboctahedron. Center: Comsurface charge distribution. Right: Wire
convenience, we chose one intermediate as the puted
mesh model. Surface is virtually graphitized.
Core diamond is partially visible (in black).
representative structure (Fig. 1.).
Surface and Internal Structure of PPDND.
Extensive graphitization of the top layer of PPDND must have caused enormous strain to
localize below the surface. As a consequence, at least the top layer of core diamond is likely
disordered, but the rest remained as the initial cubic diamond structure.
[1] V. Danilenko, O. A. Shenderova, ‛Advances in synthesis of nanodiamond particles,’ in ‘Ultrananocrystalline
diamond, 2nd edition,’ O. A. Shenderova, D. M. Gruen (eds.), Chapt. 5, p. 133-164.
[2] A. Krüger, et al. “Unusually tight aggregation in detonation nanodiamond: identification and disintegration,”
Carbon 2005, 43, 1722-1730.
Corresponding Author: E. Ōsawa, Tel: +81-0268-75-8381, E-mail: osawa@nano-carbon.jp- 33 -

3-11
Self-Assembled Organofullerene Nano- and Microspheres Containing
Inorganic and Biological Nanoparticles○Koji Harano1, Ryosuke Sekine1, Prince Ravat1, Haruaki Yanagisawa2, Chao Liu1, Masahide
Kikkawa2, Eiichi Nakamura1
1

2

Department of Chemistry, The University of Tokyo, Tokyo 113-0033, Japan
Department of Cell Biology and Anatomy, Graduate School of Medicine, The University of Tokyo,
Tokyo 113-0033, Japan

Multiple-component nano- and microspheres represented by core–shell particles continue tobe the subject of research and applications in diverse fields, and their preparation is likewise
diverse requiring a meticulous choice of conditions depending on the size, the nature of the core
particles, and their use. For example, the synthesis of archetypal organic microspheres includes
the coating of a particle with a monomer emulsified by a surfactant followed by polymerizationthat converts the noncovalent monomer assembly to a covalently bonded shell. The covalent
network that guarantees stability, however, requires chemical transformations and hence
imposes limitations on the range of core particles that can be inside. We have explored for sometime the diversity of nanostructures created by self-assembly of conical fullerene amphiphiles
in water or buffer such as vesicles, micelles, Langmuir–Blodgett films, and anisotropic
nanostructures, and conjectured on self-assembly of the fullerene molecules into a sphericalsolid (fullersphere, FS) containing nanoparticles (NPs) inside. Herein, we describe an approach
via self-assembly to robust core–shell particles via in situ conversion of a water-soluble anion,(4-heptylphenyl)5C60–K+ (C7K), to amorphous nano- to microspheres of (4-heptylphenyl)5C60H(C7H-FS) (Figure 1). Scanning electron microscopy indicates a perfectly spherical FS of
narrow size distribution. The key enabler is the higher acidity of C7H than water (estimated tobe less than 13) that allows gradual protonation of C7K by neutral to alkali water to in situ
generate water-insoluble C7H. This process ensures uniform nucleation of NPs and hence thespherical shape and uniform diameter. The diameter of FS can be tuned from 30 nm to 2.5 µm
by changing the mixing rate and pH of the buffer. Using an aqueous solution of organic dye,
nanoparticles
inorganic NP, protein, and virus, we
C H
C H+ or biological materials
C H
C H
C
H
incorporated these entities in FS. FS is
H
spherical,
amorphous,thermally insoluble
C7H
stable, and resistant to electron+H–H
irradiation, and we found its
K
C H
C H
C H
unconventional utility as a container
C H
C H
_
for electron tomography, where thesolublespecimen is tilted about a rotational
C7K
Self-assembled core-shell particles
axis for data collection from various
directions to obtain three-dimensional Fig. 1 Preparation and electron tomographic application of
structural information of NPs and fullerspheres containing nanoparticles.
biomaterials inside.
7 15

7 15

+

7 15

7 15

[1] R. Sekine et al. J. Am. Chem. Soc., 143, 2822 (2021).
Corresponding Authors: K. Harano and E. Nakamura
Tel: +81-3-5841-4369, Fax: +81-3-5841-4367,
E-mail: harano@chem.s.u-tokyo.ac.jp- 34 -

7 15
7 15
7 15

+

7 15

7 15
7 15

+

3-12
Carrier density tuning of Nb-doped WSe2 by an external electric field○Kaoru Hisama1, Yanlin Gao1, Mina Maruyama1, Ryo Kitaura2, and Susumu Okada1
1

Department of Physics, University of Tsukuba, Tsukuba 305-8571, Japan2

Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan

Nb is a plausible dopant to inject hole into transition-metal dichalcogenides (TMDCs),
making them p-type channel materials. The doped hole is extended throughout the sheet,because of a strong orbital hybridization between transition-metals and Nb. Although the
intrinsic hole distribution in Nb-doped TMDCs is clarified, it is still uncertain whether the
carrier density is controllable by the external electric field or not. Therefore, to clarify thepossibility of the Fermi level tuning, we investigated the carrier density of Nb-doped WSe2
implemented in a field effect transistor (FET) with a top gate electrode, using the density
functional theory combined with the effective screening medium method [Fig. 1(a)].
Calculated quantum capacitance of the Nb-doped WSe2 has approximately a constant valueof 0.023 aF/nm2 under gate voltage ranging from -2.1 to 2.1 V [Fig. 1(b)]. Carriers injected by
the gate voltage are primarily distributed on S atomic sites located at the electrode side andextended through the surface [Fig. 1(c)]. Because of the constant capacitance and the extended
carrier distribution, Nb-doped WSe2 is a promising p-channel material where the Fermi level istunable by the gate electric field.

Position z (Å)

70Capacitance [aF/nm2](b) 0.03

(a)

(c)

0.01
0.0

-2

-1

0

1

2

Figure 1 (a) A model of Nb-doped WSe2
FET. (b) Quantum capacitance of Nbdoped WSe2 FET as a function of gate
voltage VG. (c) Contour plots ofaccumulated carrier under gate voltage VG= -2.1 V and 2.1 V. Blue, gray, and green
filled circles denote Nb, W, and Se atoms,
respectively.

VG=-2.1 V

VG=2.1 V

Corresponding Author: Kaoru Hisama

0.02

E-mail: hisama.kaoru.gw@u.tsukuba.ac.jp- 35 -

3-13

Enhancement of the Thermal Conductance on
Artificially Stacked MoS2 by Intercalation
Wenyu Yuan1, Kan Ueji1, Takashi Yagi2, Takahiko Endo1, Hong En Lim1,
Yasumitsu Miyata1, Yohei Yomogida1, ○Kazuhiro Yanagi1*
12

Department of Physics, Tokyo Metropolitan University, Tokyo, Japan
Department of Physics, Tokyo University of Science, Shinjuku, Tokyo, JapanThe ability to tune the thermal transport of solids is of increasing significance for advanced
electronics and thermal energy harvesting. Over the past decade, various strategies have been
demonstrated to tune the heat flow, in which the electrical manipulation by the applied voltage
is highly desirable. The electronic structure can be altered through electric field, which
includes the electrochemical intercalation, the injection of carriers, and the symmetrytransformation, thereby ultimately affects the heat conduction. Conventional thermophysicaltheory suggests that the intercalation of heteroatoms into lattices or interlayers deservedly
leads to the suppression of heat conduction due to the unavoidably enhanced phonon
scattering. For instance, the intercalation of Li+ cations
into various two-dimensional (2D) materials (e.g.
MoS2, black phosphorus) decreases the out-plane
thermal conductivity [1]. Here, we report theenhancement of out-plane thermal conduction byintercalation in the artificially stacked van der Waals(vdW) structure, 5- or 4-layered MoS2.
Multi-layered MoS2 were prepared through multitransfer technique using monolayer MoS2 film
synthesized via a conventional chemical vapor
deposition. We investigated thermal conductance G of
the sample using our home-build time domain thermoFigure 1: The change of the TDTR
reflectance (TDTR) setup. In our TDTR setup, the gold
phase signal as the shift of gate voltage.
electrode can be used as the transducer, and thus we can
combine electrochemical intercalation technique and theTDTR measurements, and make us to investigate the t
G during intercalation using KClO4 as electrolyte.
Figure 1 shows the change of TDTR phase signal as afunction of delay time. As shown here, we observed
clear change of TDTR signals as the shift of gate
voltage. The G values at each gate voltage are derived
Figure 2: The change of G in 5L MoS2
from calculation fitting. Figure 2 shows the change ofas the shift of gate voltage Vg
G, which is derived through fitting simulation, as theshift of gate voltage. We found the enhancement of G
nearly two times by the shift of gate voltage.
References:[1] J. S. Kang, et al., Nano Lett. 17, 1431-1438 (2017). G. Zhu et al., Nat. Commun. 7, 13211 (2016).
Corresponding Author: K. Yanagi, +81-42-677-2494, yanagi-kazuhiro@tmu.ac.jp- 36 -

3-14
Edge States of Graphene Oxide Observed by Field Emission
and Field Ion Microscopy○Yahachi Saito

1

and Yuta Nishina2

Toyota Physical and Chemical Research Institute, Nagakute 480-1192, Japan
Research Core for Interdisciplinary Sciences, Okayama University, Okayama 700-8530, Japan
1

2

Electronic states at graphene edges exhibit peculiar properties, e.g., spin polarization at
zigzag edge [1]. Field emission microscopy (FEM) of graphene edges shows a striped
pattern (“lip pattern”), reflecting the symmetry of π orbitals at a graphene edge [2]. Field ion
microscopy (FIM), being complementary to FEM, exhibits much fine images with atomic
resolution. In our previous FIM study on few-layer graphene, arrays of paired spots being
split on both side of a graphene plane, were observed [3]. According to the image formation
mechanism of FIM, these dipole spots in the FIM images are surmised to reflect the spatial
distribution of unoccupied π orbitals at the edges ofgraphene.
In the present study, FEM and FIM were applied tographene oxide (GO) to reveal atomic structures andelectronic states at the edges of GO. GO emitterswere prepared by drop-and-dry of GO solution.
Figure 1 shows a scanning electron micrograph of theedge of a prepared GO emitter. Figures 2 (a) and (b)are typical FEM and FIM images of a GO emitter,
Fig. 1
respectively. The FEM image (Fig. 2 (a)) exhibits
a “lip pattern” characteristic to a graphene edge; anarray of streaked double spots. The striation of
spots perpendicular to the graphene layer is due tothe strong anisotropy of magnification for
two-dimensional material like graphene.
Thecorresponding FIM image (Fig. 2 (b)), taken using
Ne as imaging gas, reveals more detailed structures
because of higher spatial resolution. An array of
streaked, split spots (dipole spots), and race-track
shaped spots, being very similar to those in FIM
images of scratched graphene emitters [3]. Since
the images in FIM represent the locations where
imaging gas atoms are ionized by electron tunnelingto unoccupied electronic states of the emitter, theobserved FIM patterns (doublets, race-track shaped
spots) reflect spatial distributions of the unoccupied
Fig. 2π*-orbitals at the edge of GO (and graphene).
[1] M. Fujita et al., J. Phys. Soc. Jpn. 65 (1996) 1920. [2] N. Yokoyama et al., Surf. Interface Anal. 48 (2016)
1217. [3] Y. Saito et al., Abst. of the 57th FNTG Symp. (Sept., 2019) p.27.

Corresponding Author: Y. Saito
Tel: +81- 561-57-9616, Fax: +81- 561-63-6302, E-mail: ysaito@toyotariken.jp- 37 -

3-15
Energetics of bilayer hexagonal boron nitride nanoflakes: A nucleation
process of a second layer on a substrate layer○Mina Maruyama, Susumu Okada
Department of Physics, University of Tsukuba, Tsukuba 305-8571, Japan

Hexagonal boron nitride (hBN) is a key substrate material for other layered materials
without modulating their physical and chemical properties. Therefore, it is important tosynthesize high quality and large area hBN. Chemical vaper deposition (CVD) experiments
reported that the nucleation of the second layer depends on the environmental conditions:Primarily two different nanoflake orientations have been observed on the substrate layer ofhBN during CVD growth [1]. However, it is still uncertain the physical mechanism of thenucleation of the second layer of hBN. Therefore, in this work, we theoretically investigatedenergetic of bilayer hBN nanoflakes in terms of their mutual stacking arrangement, flakeorientation, and edge termination using density functional theory with generalized gradientapproximation including van der Waals correction.
Figure 1 shows calculation models in this work where the second layer of hBN nanoflakes
with H edges are adsorbed on the large triangular hBN substrate with edge size of 2.3 nm.
Our calculations demonstrated that the nucleation of the smallest triangular flake depend on
the edge termination: Formation energy of the flake with N edges is lower than that with B
edges irrespective of their orientation and position. We also found that the triangular flake
prefers the center of the large hBN flake and the energy monotonically decreases withapproaching the edge atomic sites. In contrast, the formation energy is insensitive to themutual orientation of small flakes on the substrate layer.

Fig. 1 A structural model of bilayer h-BN nanoflakes comprising a large triangular flake (2.3 nm) and thesmallest triangular flakes with (a) N edge in AA’ stacking, (b) N edge in AB stacking, and (c) B edge inAA’ stacking. Blue, violet, and pink balls denote N, B, and H atoms, respectively.

[1] Y. Uchida, et al., Phys. Chem. Chem. Phys. 19 (2017) 8230-8235.
Corresponding Author: M. Maruyama
Tel: +81-29-853-5921, Fax: +81-29-853-5924, E-mail: mmaruyama@comas-tsukuba.jp- 38 -

3-16
Efficient fabrication of graphene nanoribbon quantum dot devices withtemperature-stable orbital-level spacing(b) 100

100(c)Appearance
rate of CB (%)

100

100

Appearance rate of
Coulomb diamond (%)(a) 100(h) Carbon atom

Multi dot(i)Ni nanobar(liquid phase)

Yd (%)

50
50○Naofumi Sato1, Takahito
Kitada2, Mizuki
Seo1, Toshiro50 Kaneko1, Tomohiro Otuka2, Toshiaki
50

00

100
100

LNi (nm)

50

Kato1

00

200
200

100
200
200
100
LNi (nm)

Single-like dot

0100
LNi (nm)

200

(ii)

PR instability
BP GNR
Graduate School of Engineering,Tohoku University, Sendai 980-8579,
Japan
0.9
(e)
2
(g)
No CB Tohoku(d)10 of Electrical〇:CB ×：No CBCommunication,
0.8
Research Institute
University, Sendai 980-8577, Japan
10

1

0.9

0.8

6

0.7
0.7

01

6

Gmin /G00

Ea = 5.3 meV

Node
point

0.6

0.5
In recent years, graphene nanoribbon(GNR),
stripsof two-dimensional(2D) graphene
0.02 0.04
0
10
(iii)
0.04

RT (kΩ)

0.02

4

01

0.5
0

4

G /G0

0.6

10
into one-dimensional(1D) structure (f)gather intense
attentions because of their superior
GNR
CB
electrical features.
E = 218 meV
10Fine structure
Until now, we 10have developed a novel method based on the advanced
plasma CVD with
No CB
CB
10
10
CB
(Singleon / off nanobar) for
nanoscale Ni catalyst (Ni
1/T (K )directly(Multi
QD)
like QD)
fabricating suspended
GNR devices [1, 2]. In this
(j)
(i)
Ni
study, we have demonstrated the scalable fabricationof GNR-based quantum dot devices by adjusting GNR
12 nm
structures and growth conditions in our plasma CVD.
GNR
Fine
structure
Systematic investigation revealed that fineNistructures are formed at the middle of the GNRs (Fig.
100 nmV (V)1), which can be considered as theorigin of thequantum-dot features in our GNRs. Detailed Fig. 1. SEM images of suspended GNR
measurements at cryogenic temperatures revealed that with fine structures grown by our plasma
clear orbital-level spacings ( ∆𝑉𝑉𝑑𝑑𝑑𝑑_𝑒𝑒𝑒𝑒 ) between the CVD.
ground state (GS) and excited states (ES) exist in our
GNR-based
quantum-dot
device(Fig.
2).
Furthermore, the orbital levels were found to be very
stable even at high-temperature conditions (~20 K),
which can be explained by the very fine structures
formed in the middle of the GNR and relatively lighteffective mass of the GNR. More than 18% of devices
fabricated within the same substrate showed orbital
levels, indicating that integration of GNR-based
quantum-dot devices is possible with our method.
Fig. 2. Large Coulomb diamonds
These findings further the fundamental study of GNR- observed from our GNR-QD device. The
based quantum devices toward practical applications.
dashed lines highlight ESs parallel to the−21010-2Gmin /G0−2

1/T (K-1)

1010-4

−4

2

2

a

01

10-6−6
10

00

0.02
0.02

0.04
0.06
0.06
0.04

-1

100
80

25

60

0

40

-25

Ids [nA]

Vds (mV)

50

-5010

1−

1

2−

0

3−

−4

20

15

20

25

30

0

g

edges of the diamonds (GS).

[1] T. Kato and R. Hatakeyama, Nature Nanotechnology, 7, 651-656 (2012).
[2] H. Suzuki, T. Kaneko, Y. Shibuta, M. Ohno, Y. Maekawa, T. Kato, Nature Communications, 7, 11797-1-10(2016).
Corresponding Author: N. Sato
Tel: +8122-795-7046, Fax: +8122-263-9225,
E-mail: naofumi.sato.s2@dc.tohoku.ac.jp- 39 -

3-17

Activation of single-photon emitter on CVD-hBN
treated with thermal process○Yusuke Adachi, Takayuki Arie, Kuniharu Takei, Seiji Akita
Department of Physics and Electronics, Osaka Prefecture University, Sakai 599-8531, Japan

Intensity (arb.unit)

Recently, hexagonal boron nitride (hBN) is expected to play an important role in various
fields such as single photon emitters (SPEs) or nano-electro-mechanical components. The SPEs
in hBN are bright and operate in room-temperature. Therefore, the hBN is considered to bepromising components for quantum information and communication technology. However,there is room for improvement in emission purity or intensity. In this work, we investigate thelight emission from multi-layer CVD-hBN treated with thermal annealing process [1].
The multilayer CVD-hBN on copper foil (a)purchased from “SixCarbon Technology” wastransferred to the substrate by typical wet transfer
method. Transferred samples were put into a electric
tube furnace and annealed at 850 ℃ for 30 min
under 1 torr of argon. The sample was than cooled
to room-temperature overnight.
We observed light emission from CVD-hBN at
20 µm
ambient condition. Fig.1(a) is the bright field imageof CVD-hBN under the irradiation of LED light with (b)the center wavelength of 530 nm. Fig.1(b) is thephotoluminescence (PL) image of CVD-hBN under
the irradiation of same LED light as in BF image.
The PL image was taken through a 550 nm LPF. In
the center of the PL image, there is a light emitting
spot with a diameter of about 2 µm on the hBN film.
Note that the PL emission from the hBN without
20 µm
thermal treatment has rarely observed.
Fig.1(c) shows a PL spectrum from the emission (c)site on the CVD-hBN shown in Fig.1 (b) measured
at room temperature, where the 532 nm laser wasused for excitation. The clear peak around 620 nm
was observed corresponding to the zero phononline.[1] Moreover, the spectrum shows a phononside band doublet with well-resolved peak at 670
nm.[1] Thus, the thermal treatment around 850 ℃ is
efficient for the activation of single photon emission
site even for the multilayer CVD-hBN.
550

600

650

700

750

800

wavelength (nm)
References[1] T. T. Tran et al., Nat. Nanotechnol. 11, 37 (2016).
Corresponding Author: Y. Adachi
Tel: +81-72-254- 9261, E-mail: adachi-4@pe.osakafu-u.ac.jp- 40 -

Fig.1: (a) BF image of the multilayer CVDhBN when irradiated 530 nm light. (b) PL
image of same hBN in BF image. (c) The PL
spectrum of CVD-hBN excited by 532 nm
laser at room temperature.

3-18
Spiro-graphene: New two-dimensional C allotropes comprisingfenestratetraene and cyclooctatetraene○Susumu Okada, Nguyen Thanh Cuong, Yanlin Gao, Mina Maruyama
Department of Physics, University of Tsukuba, Tsukuba 305-8571, Japan
Topological design of sp2 C atoms provided an additional degree of freedom to tune theelectronic structure of carbon-based nanoscale materials because the covalent network
topologies of sp2 C atoms tightly correlated with their electronic structure. Polymerization ofsmall hydrocarbon molecules is one of plausible procedure for synthesizing covalent networks
of C atoms whose structures are precisely controlled. This procedure benefits from the ability
to design the electronic structures of resultant covalent networks by assembling andpolymerizing appropriate molecules.
In this work, we aim to investigate the geometric and electronic structure of twodimensional covalent networks of fused pentagons with structural rippling using density
functional theory (DFT) with generalized gradient approximation because the pentagonal ringsand polymeric structure of hydrocarbon
molecules lead to a peculiar electronic structure.
We focus on a fenestratetraene (four pentagons
sharing their edges and one vertex) and acyclooctatetraene (C8H8) as constituent unit of the
networks (Fig. 1). Our DFT calculations revealed
that the network is a metastable phase of ametallic carbon allotrope with relatively hightotal energy and remarkable thermal stability.
This spiro-graphene comprising fenestratetraene
and cyclooctatetraene is a metal where two
dispersive bands cross at the Fermi level. In
addition, this structure undergoes structural phasetransition resulting in a space structure which Fig.1 Geometric structure of spiro-grapheneoffenestratetraene
andpossesses spin polarized states as its ground state. consisting
cyclooctatetraene.

Corresponding Author: Susumu Okada
TEL: +81-29-853-5921, FAX: +81-29-853-5924
E-mail: sokada@comas-tsukuba.jp- 41 -

3-19
Insulating properties of h-BN film synthesized by sputtering method○Daiyu Kondo1 Kenjiro Hayashi1, Masako Kataoka1 and Shintaro Sato1
1

Fujitsu Research, Fujitsu Limited,
10-1 Morinosato-Wakamiya, Atsugi 243-0198, Japan

Hexagonal boron nitride (h-BN) is well known as a prominent candidate for an
insulation and passivation layer of graphene-based devices [1]. Extremely high field effectmobility has been reported for a graphene-channel sandwiched between h-BN layers [2].
Generally, h-BN films are obtained by exfoliation from bulk h-BN. Therefore, one can easily
imagine that it is difficult to prepare large-area h-BN for industrial use. Here, we propose
synthesis of few-layer h-BN films by the sputtering method, which is easily scalable forelectronics applications.
The sputtering method was performed in a low-pressure chamber. Metal
catalysts such as iron (Fe) and BN films were sputtered on a sapphire substrate with atemperture of 500℃. The thicknesses of Fe and BN films were 50 nm and 2-150 nm,
respectively. The sputtering of 2-nm BN onto the catalyst film resulted in the formationof few-layer h-BN, as observed in a transmission electron microscopy (TEM) image of
figure 1. On the other hand, h-BN with random structures was observed when the
thicknesses of sputtered BN were increased above 2 nm. Furthermore, insulating
properties of few-layer h-BN were measured with a conductive atomic force microscope.
The 5-nm-thick h-BN structures obtained by the sputtering method were found to break
down when a voltage of -15 V was applied. By assuming the parallel plate model, thebreakdown strength of h-BN was estimated to be around 40 MV/cm, which iscompellable with that for exfoliated h-BN reported previously [3].
Part of this work was conducted at the Nano-Processing Facility, supported by
IBEC Innovation Platform. This research was partly supported by JST CREST Grant
Number JPMJCR15F1, Japan.
[1] H. Yamada et al. Science, 123, 456 (2020). A. Geim and K.
Novoselov, Nature Mater. 6, 183 (2007)[2] C.R. Dean, A.F. Young, I. Meric, C. Lee, and L. Wang, et al.,Nature Nanotechl. 5, 722 (2010)[3] Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, ACS
Nano 9, 916 (2015)
Corresponding Author: D. Kondo
Tel: +81-46-250-8238, Fax: +81-46-250-8844,
E-mail: kondo.daiyu@fujitsu.com

Fig. 1 Cross sectional TEM image of h-BN.

- 42 -

3-20

Precipitation of graphite layer with smooth and large domain
on c-plane sapphire using crystallized Ni catalyst○Shigeya Naritsuka1, Asato Nakashima1, Tomoaki Murahashi1, Tatsuya Kashio1,
Yasuhiro Fukunishi1, Kazuki Mita1, and Takahiro Maruyama2
1

Department of Materials Science and Engineering, Faculty of Science and Technology, Meijo
University, Nagoya 468-8502, Japan2
Department of Applied Chemistry, Faculty of Science and Technology, Meijo University, Nagoya
468-8502, Japan

Graphene was initially supplied by the exfoliation of highly-oriented pyrocitric graphite [1].
However, the size and the reproducibility was far inferior to the request of their applications.
Chemical vapor deposition on copper foil is the regular routine to obtain graphene. On the other
hand, we have been trying to produce a superior multi-layer graphene directly on substrates
using precipitation method [2]. The high-quality multi-layer graphene, in other words, graphite
is useful to use as a graphene source in the van der Waals engineering process of 2D materials[3]. Here, we show the result of graphite precipitation using crystallized Ni catalyst.
A 100 nm-thick MBE-grown Ni (111) layer was used to thermally crystallize a 300 nm-thicke-beam deposited Ni layer on a sapphire substrate. After the crystallization of the Ni catalyst,
the sample was coated by nanodiamond, and heated at 900oC for 30min in a vacuum (10−4–10−3Pa) using an infrared lamp apparatus. Then, the temperature was cooled down at a rate of
3oC/min. After the precipitation, the catalyst was removed using a diluted FeCl3 solution to
directly observe the graphene on the substrate.
Mapping of the Raman D/G peak ratios isshown in Fig. 1 along with a microscopy imageof the sample area. It is evident from the figurethat the ratio was reduced in the area with thickgraphene islands. In addition, the boundaries
where two graphene islands merged are shownby the broken lines in the image, and there is no
associated increased in the D/G ratio in theseregions. This result suggests that the islands aresmoothly connected and so the boundaries hadvery few defects. This can likely be attributed
to the precise alignment of the islands and to thesmooth stitching. The perfect atomic
arrangement of Ni atoms in the crystalized Nilayer also likely assisted in the superiorFig. 1 (a) A Raman D/G ratio map of a precipitatedalignment of the graphene islands.
[1] K. S Novoselov et al., Science 306 (2004) 666.
[2] J. Yamada et al., Jpn. J. Appl. Phys. 55 (2016) 100302.
[3] S. Masubuchi et al., Nature Comm. 9 (2018) 1413.
Corresponding Author: S. Naritsuka
E-mail: narit@meijo-u.ac.jp- 43 -

graphene sample and (b) an N-DICM image of thecorresponding area.

ポスター発表
Poster Preview

1P – 1 ～ 1P – 87

1P-1Fabrication and hierarchical structure control of carbon nanotube
electron field emitter for X-ray tube
○Kotaro Yasui1, Hisashi Sugime2, Hayato Ochi3, Yuichi Nishikiori3, Suguru Noda1,2
Department of Applied Chemistry, Waseda University
Waseda Research Institute for Science and Engineering, Waseda University
3
MEIDENSHA CORPORATION
1

2

Compared with thermal emitters, electron field emitters are effective for miniaturization andlowering energy consumption of X-ray tube which is expected for various uses such as medical
and industrial uses. Carbon nanotube (CNT) which has high electric conductivity and highaspect ratio is one of the most promising material for electron field emitters, thus has been
researched intensively [1]. In this research, field electron emitters were fabricated by controllingmorphology of vertically aligned (VA) CNT variously via simple processes for X-ray tubes.
As shown in Fig. 1, the morphology of the VACNT was controlled, and the emitter
performance was evaluated by applying electrical field with 2.5 kV/mm under 10-4 – 10-5 Pa for1001 cycles. As can be seen in the current density at the 1001st cycle (Fig. 2), the morphology
control of VACNT at the micrometer level had little effect on performance improvement(Sample B) while that at the sub-millimeter level significantly enhanced the field emission
performance (Samples C and D).

Fig. 1. (a) CNT emitters on Cu stages (Samples A, B,
C, and D). (b) SEM Images of surface VACNTs
morphology on emitters.

Fig,2, Current density at the 1001st cycle of the CNT
emitters (Samples A, B, C, and D)[1] Y. Cheng & O. Zhou, C.R. Physique, 4, 1021 (2003).
Corresponding Author: S. Noda
Tel&Fax: +81-3-5286-2769,
E-mail: noda@waseda.jp- 45 -

1P-2
Fabrication of nanostructures incorporating carbon nanotubes
and one-dimensional confinement of charged excitons○Haruna Nakajima1, Taiki Inoue2, Shohei Chiashi3, Shigeo Maruyama3, Keiji Ueno4, Kenji
Watanabe5, Takashi Taniguchi5, Ryo Kitaura1
1

Department of Chemistry, & Institute for Advanced Research, Nagoya University,
Nagoya 464-8602, Japan2
Department of Applied Physics, Graduate School of Engineering, Osaka University,
Osaka 565-0871, Japan3
Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
4
Department of Chemistry, Graduate School of Science and Engineering, Saitama University,
Saitama 338-8570, Japan
5
National Institute of Materials Science, Tsukuba 305-0044, Japan

Functional heterostructures formed through assembling nanomaterials play a central role innanoscience and nanotechnology. Carbon nanotubes (CNTs), ultrathin one-dimensional (1D)
semiconductors/metals, are indispensable components for the functional heterostructures,providing ultimate thin semiconductor channels, local probes, and local gate electrodes, etc. In
this research, aiming to establish a versatile construction method for nanostructures
incorporating CNTs, we have developed a simple CNT transfer method by combining a polymer
stamping and a micromanipulation machine. Also, we have applied the method to fabricate 1D2D mixed-dimensional (1-2mD) structures and investigated their optical properties.
A schematic diagram ofthe experimental proceduredeveloped is shown (Fig. 1).
First, we prepare highlyoriented CVD-grown CNTs
on silicon substrates. These
CNTs are lifted by a domeshaped polymer stamp andtransferred onto anotherFig 1. A schematic diagram of experimental procedure
substrate.
Throughthecontrolling position of the stamp and orientation of thesubstrate, orientation-controlled CNTs are successfully
placed on the substrate at the desired location. Furthermore,
we have applied this method to fabricate 1-2mD structures,
where a CNT and a 2D semiconductor (transition metal
dichalcogenides, TMDs) are stacked (Fig. 2). Using the 12mD structures, TMDs can (1) locally be gated to realize 1Dchannels in 2D and (2) host 1D electronic states throughlocal 1D strain. In the presentation, in addition to details of
fabrication, I will discuss optical properties of these 1-2mD
structures.
Fig.2 An optical microscope image ofhBN / MoS2 / hBN / CNT structuretransferred on a SiO2/Si substrate

Corresponding Author: R. Kitaura
Tel: +81-52-789-3660, Fax: +81-52-747-6442,
E-mail: r.kitaura@nagoya-u.jp- 46 -

1P-3
Efficient and Narrow-Linewidth Photoluminescence Devices
Based on Single-Walled Carbon Nanotubes and Silicon Photonics○Ryohei Imafuku1, Naoto Higuchi1, Hiroto Niiyama1, Kenta Nakagawa1,2 and Hideyuki Maki1,3
1

Department of Applied Physics and Physico-Informatics, Keio University, Kanagawa 223-8522,
Japan
2
Kanagawa Institute of Industrial Science and Technology (KISTEC), Kanagawa 243-0435, Japan
3
Center for Spintronics Research Network (CSRN), Keio University, Kanagawa 223-8522, Japan

Nanocarbon materials are promising candidates for optoelectronic devices such as lightsources [1-4] because they are easily formed on silicon substrates. In this study, we developed
narrow-linewidth photoluminescence (PL) devices based on single-walled carbon nanotubes(SWNTs) and silicon photonics with micro-resonators and waveguides (Fig. 1(a)). Althoughmost previous studies on SWNTs-silicon photonics devices managed either the excitation oremission light from the top of the device, our devices allow in-line operation by inputting andoutputting light via the waveguide. As shown in Fig. 1(b), narrow-linewidth PL emission witha Q factor of ~ 3000, whose linewidth is about 1/140 of that in free space, is observed from thering resonator device. In addition, the PL emission is enhanced by a factor of approximately 34
due to confinement of the excitation light in the resonator. We also observed the excitation
intensity dependence of the PL intensity and Q factor due to the saturable absorption of the
SWNTs on the resonator. From the disk resonator device, PL emission with a high Q factor of
5700 and a narrow linewidth of 270 nm is obtained (Fig. 1(c)). This on-chip and in-line PL
device can be applied for highly integrated silicon photonics and optoelectronics based on
SWNTs in telecommunication band for optical communications, optical interconnects, quantum
photonics, etc. This work was partially supported by PRESTO and A-STEP from JST and
KAKENHI, KISTEC project, and NIMS Nanofabrication Platform in Nanotechnology
Platform Project by MEXT.

Fig. 1(a) A schematic of SWNTs light emitter. (b) PL spectrum under resonant excitation (continuous line).
The dotted line shows the typical PL spectrum of the SWNT film on the SiO 2 substrate. (c) PL spectrum of disk
resonator device.
[1] N. Higuchi, H. Niiyama, K. Nakagawa & H. Maki ACS Appl. Nano Mater. 3, 7678-7684 (2020).
[2] H. Takahashi, Y. Suzuki, N. Yoshida, K. Nakagawa & H. Maki J. Appl. Phys. 127, 16 (2020).
[3] R. Kawabe, H. Takaki, T. Ibi, Y. Maeda, K. Nakagawa & H. Maki ACS Appl. Nano Mater. 3, 682-690 (2020).
[4] T. Mori, Y. Yamauchi, S. Honda & H. Maki Nano. Lett. 14, 3277-3283(2014).
Corresponding Author: H. Maki
Tel: +81-45-566-1643, Fax: +81-45-566-1587, E-mail: maki@az.appi.keio.ac.jp- 47 -

1P-4
Machine learning assisted control of nanocarbon dispersion for optimal
material and process design of electronics○Shun Muroga, Ying Zhou, Takeo Yamada, Toshiya Okazaki, Kenji Hata
CNT-Application Research Center, National Institute of Advanced Industrial Science and Technology(AIST), Tsukuba 305-8565, Japan

Printable, lightweight, mechanically durable, and chemically stable electrodes aredemanded for futures electronics, including stretchable devices, foldable displays, wearable
devices, and flexible solar cells. Nanocarbons, especially carbon nanotube (CNT), has attracted
strong interest due to their potential compared to metals and cost-effective to othernanomaterials [1,2]. Depending on the fabrication process, compositions of dispersion were
under several constraints, which requires trial-and error for material and process design. We
focused on machine learning techniques for shortening period for selecting and trying rational
solvents depending on the process.
In this study, we developed a model for predicting degree of exfoliation of carbon
nanotube in solvent using machine learning technique as shown in Fig. 1. Machine learningmodel was trained by chemical structures of solvent and degrees of exfoliation after dispersion
to select rational solvent from predicted results. Here, the degree of exfoliation was defined asa logarithm of the ratio of average width of bundles before and after dispersion process. Highly
crystalline single walled carbon nanotube (eDIPS, Meijo Nanocarbon) and polyacrylic acid
(PAA) as a dispersant were used as model materials. Various solvents were used to disperse
CNT with PAA to obtain exfoliated CNT dispersions. I/O of the machine learning model werethe chemical descriptors from the Simplified Molecular Input Line Entry System (SMILES) of
chemical structures of the solvents as inputs, and the degrees of exfoliation as outputs.
Machine learning model was constructed from a random forest regressor, resulting ina good relationship between measured degree of exfoliation and predicted values from themodel. Fig. 2 shows the relationship of the predicted degree of exfoliation and solvent viscosityand boiling point. Large marker indicates the highly exfoliated dispersion in the solvent. The
results represented that our model enabled to select rational solvent depending of processing
with desired volatility and viscosity, e.g., applicability to select solvents in different situations,such as, spin coating, bar coating, screen printing, and inkjet printing.

Fig. 1. Schematics of the machine learning.

Fig. 2. Predicted degrees of exfoliation in various solvents.

[1] Y. Zhou et al. Appl. Phys. Exp., 114, 213104 (2019). [2] Y. Zhou et al. Nanoscale, 11, 3804-3813 (2019).
Corresponding Author: S. Muroga, Tel: +81-29-849-1534, Fax: +81-29-851-5424, E-mail: muroga-sh@aist.go.jp- 48 -

1P-5
Air-Stable n-type of Single-Walled Carbon Nanotubes by
Organic Boron Compounds○Hamasuna Aoi1, Naoki Tanaka1,2, Tsuyohiko Fujigaya1,2,3
1

Graduate School of Engineering, Kyushu University, Fukuoka 819-0395, Japan
2
WPI- I2CNER, Kyushu University, Fukuoka 819-0385, Japan
3
Center for Molecular Systems (CMS), Kyushu University, Fukuoka 819-0395, Japan
Single-walled carbon nanotubes (SWCNTs) are promising materials for thermoelectric
devices because of their remarkable electrical conductivity, flexibility, and light weight. For
efficient thermoelectric generation, both p-type and n-type thermoelectric materials are required.
However, SWCNTs act as p-type semiconductors owing to the hole doping by water and oxygenin the air. Therefore, many efforts to develop n-type SWCNTs have been performed mainly bychemical doping using electron donors. Recently, our group reported that pyridine boryl radicals
generated by mix bis(pinocolate)diboron (B2pin2) and pyridine derivatives as a Lewis base canact as electron-dopants of SWCNTs [1].
However, the n-doped SWCNTs did notshow long-term air stability. In thisstudy, we demonstrated that n-doped
SWCNTs using tetrahydroxydiboron(B2(OH)4) as boron source showed long- Fig. 1 Schematic image of n-doping of SWCNT using
tetrahydroxydiboron (B2(OH)4) and pyridines.
term n-type nature in air (Fig. 1).
The Seebeck coefficient of SWCNT sheets after immersing
in a THF solution of mixing B2(OH)4 and pyridine
derivatives with cyano, phenyl, and carboxy groups in thepara position were negative, indicating that a n-type nature
was generated by electron doping (Fig. 2). As the n-type
stability of the three SWCNT sheets in air were evaluated,
the SWCNT sheet using B2(OH)4 and 4-phenylpyridine
showed n-type properties for more than 50 days under air.
[1] N. Tanaka, T. Fujigaya et al., Chem. Commun., 2021, 57, 6019-6022.

Corresponding Author: T. Fujigaya
Tel: +81-92-802-2842, Fax: +81-92-802-2842,
Web: http://www.chem.kyushu-u.ac.jp/~fifth/jp/
E-mail: fujigaya.tsuyohiko.948@m.kyushu-u.ac.jp- 49 -

Fig. 2 Seebeck coefficient of pristine
SWCNT sheet (black) and SWCNT
sheets doped with B2(OH)4 and pyridines(4-cyanapyridine (red), 4-phenylpyridine(blue) and 4-carboxypyridine (pink)).

1P-6
Systematic structural study of cation-ordered pentavalent fullerides○Keisuke Matsui1, Kosmas Prassides1
1

Department of Materials Science, Osaka Prefecture University, Osaka 599-8531, Japan

Buckminsterfullerene C60 has high electron affinity that allows it to behave as an electron
acceptor. For example, solid C60 forms charge-transfer
compounds with various metals (fullerides), which areestablished as molecule-based strongly correlated
electron systems. The properties of fullerides
dramatically change depending on the doping level, thenature of intercalants, and the charge states of C60 (up to-12). One of the most interesting family is that of trivalent
fullerides A3C60 (A = alkali metals) which show thehighest superconducting transition temperature (Tc ~ 38K) and critical magnetic field (Hc2 ~ 90 T) for a molecular
diagram ofsolid. In this system, Tc follows dome-like dependence as Fig. 1 Schematic phasetrivalent fullerides A3C60. AFI stands
a function of U/W (U: on-site Coulomb energy, W: for antiferromagnetic insulator.
bandwidth) or equivalently unit cell volume in a wide
range[1] (Fig. 1).
On the other hand, pentavalent fullerides have not been experimentally well-studied except
for non-superconducting Ba2AC60 (face-centered cubic, fcc)[1][2][3] although theory suggests
possible emergence of superconductivity. In this system, Ba2+ and A+ occupy small tetrahedral(Td) and large octahedral (Oh) holes, respectively in the fcc-C60 lattice[2][3]. Another approach toaccess (C60)5- in the lithium fulleride LixCsC60 (x ≈ 5) has been also reported[5], that revealed
fcc-Li5CsC60 does not show superconductivity. In both cases, the unit cell volume varies very
little in the approximate range 700 - 720 Å3 per C60 molecule.
Here we present our syntheses and systematic structural
study of cation-ordered M2AC60 fullerides by synchrotron Xray diffraction. Diffraction profiles of these fullerides where
Ba2+ ion is substituted by the smaller strontium/ytterbium ionsshowed the adoption of an orthorhombic lattice (Fig. 2), unlike
isoelectronic fcc-Ba2AC60. Intriguingly, the cation doped into
the tetrahedral holes are away from the center which has neverbeen encountered in trivalent fullerides A3C60. Althoughsuperconductivity has not as yet been observed in these ternary
systems, systematic control of the crystal structure at the fixed Fig. 2 Crystal structure of
ternary fullerides M2AC60.
charge level (C60)5- has been established by chemical means.
[1] Y. Takabayashi et al. Science, 323, 1585 (2009).
[2] A. C. Duggan et al. Chem. Commun., 10, 1191 (1996).
[3] T. Yildirim et al. Phys. Rev. B., 54, 11981 (1996).
[4] K.-F. Their et al. Phys. Rev. B., 59, 10536 (1999).
[5] M. Kosaka et al. Phys. Rev. B., 59, R6628 (1999).
Corresponding Author: Kosmas Prassides
Tel: +81-72-254-6162- 50 -

1P-7
Electron states tuning of bilayer graphene by intercalation and adsorptionof corannulene○Mina Maruyama, Susumu Okada
Department of Physics, University of Tsukuba, Tsukuba 305-8571, Japan

Graphite occupies an important position in pure and applied sciences owing to its uniquestructural and electronic properties. A chemically inert honeycomb covalent network of C
makes graphene a starting material to construct various hybrid structures with other layeredmaterials and molecules. Graphite intercalation compound (GIC) is the representative
example of such hybrid structures where atoms or molecules are intercalated into nanoscalespacing between graphene layers. Depending on the intercalated materials and theirconformation between graphene layers, GICs exhibit interesting variation in their physicalproperties [1]. In this work, we considered the thinnest GIC consisting of bilayer grapheneand corannulene molecule (C20H10) to explore a potential carbon-based intercalation
compound with unique geometric and electronic structures, using density functional theory
with generalized gradient approximation including van der Waals correction.
Our calculations show that their electronic structures strongly depend on corannulene
conformations between graphene layers.
Electrons and holes are redistributed ingraphene layers located at the edge andconvex regions of corannulene,
respectively, owing to the dipole
moment of corannulene. We further
demonstrated that the bilayer graphene
containing corannulene molecules act as
the p/n junction by forming the borderwhere corannulene direction is opposite
each other. Figure 1 shows the projected
density of states (pDOS) on atomic sitesof graphene layers. Band bending
occurs at the border between the
bowl-up and bowl-down regions. We
also found the similar band bending ofvalence and conduction band edges ofbilayer graphene on which the Fig. 1 Projected density of states (pDOS) on atomic sites
corannulene layers are adsorbed. belonging to top graphene layer (GT) and to bottom
Therefore, the result implied that the graphene layer (GB) of corannulene intercalated bilayer
bowl-shaped hydrocarbon molecules graphene. The energy is measured from that of the Fermi
could control the local electronic level.
structures of bilayer graphene in termsof their molecular conformations.
[1] M. S. Dresselhaus and G. Dresselhaus, Adv. Phys. 30, 139-326 (1981).
Corresponding Author: M. Maruyama
Tel: +81-29-853-5921, Fax: +81-29-853-5924, E-mail: mmaruyama@comas-tsukuba.jp- 51 -

1P-8
The strain effect on van der Waals heterostructure○Rei Usami1, Ryotaro Fukui1, Takahiko Endo 2, Yasumitsu Miyata2, Jiang Pu1,
Souma Suzuki1, Togo Takahashi1, Ryo Kitaura3, Taishi Takenobu1
1

2

Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan
Department of Electrical Engineering, Tokyo Metropolitan University, Tokyo 192-0397, Japan
3
Deartment of Science, Nagoya University, Nagoya 464-8603, japan

Recently, transition metal dichalcogenide (TMDC) monolayers and their van der Waals
heterostructures have been attracted intense attention because many unique properties such as
interlayer exciton and Moiré pattern were realized [1-3]. In particular, Moiré pattern offered aplatform to discover new physics and device functionalities [3]. However, Moiré patterns are
created by manual exfoliation/lamination ofmonolayers and precise control of their relative
layer angle is necessary. Therefore, it is still
difficult to prepare the controlled Moiré patterns
and researchers on Moiré pattern are still limited.
Here, we propose a method to control Moiré
patterns using strain effect, which cancontinuously tune photoluminescence (PL) Fig. 1 Schematic drawing of transfer and measure.
properties and Moiré structure at the heterointerface.
Figure 1 schematically illustrates the fabricationand measurement of the strained heterostructure.
First, CVD-grown WS2 monolayer was transferred
on a PEN substrate. Then, CVD-grown WSe2
monolayer was transferred on the initial substrate.
We evaluated PL spectra of each layer andinterlayer exciton with additional strain. Figure 2
shows the strain dependences of PL peak energy
Fig.2
Fig
2 Strain dependence of the peak shift.
shiftwith tensile and compressive strain. For WS2 layer,
the linear peak shift was observed, which attributes to the bandgap change via strain effects [4].
The peak shift of interlayer excitons was also linearly varied. This is first observation of strain
tuning interlayer excitons in TMDC heterostructures. Most interestingly, for WSe2 layer, thepeak shift was changed non-linearly, meaning that the peak shift seemed to be smaller as
increasing strains (Fig. 2). We expected that these inconsistent PL behaviors between WS2 andWSe2 was due to the different strain distributions. Therefore, our results suggest the continuous
control of Moiré patterns in strained heterostructures. Furthermore, the proposed approach may
enable to create unconventional Moiré structures offering possibilities for elucidating novel
physical properties in the future.
[1] Xiaoping Xue et al. Applied Surface Science 455 963-969 (2018)[2] Kha Tran et al. Nature, VOL.567 7 March (2019)[3] Y. Chandra et al. Computational Materials Science 177 109507 (2020)[4] Sangyeon Pak et al. Nano Lett. 17, 5634-5640 (2017)
Corresponding Author: J. Pu, T. Takenobu
E-mail: jiang.pu@nagoya-u.jp, takenobu@nagoya-u.jp, Tel/Fax: +81-52-789-5165- 52 -

1P-9
Optical properties of transition metal dichalcogenides
with microshperical optical cavity‫ۑ‬Mikio Kobayashi1, Keisuke Shinokita1, Naoki Wada2, Takahiko Endo2,
Yasumitsu Miyata2, Kazunari Matsuda1
12Institute of Advanced Energy, Kyoto University, Uji 611-0011, Japan
Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan

Atomically thin transition metal dichalcogenides (TMDs) have attracted much attention inrecent years because of their excellent optical properties. Their strong light emission properties
in its monolayer form could be applicable for next-generation optoelectronic devices as
extremely thin optical gain medium. Recently several studies have tried to achieve lasing
operations by integrating TMDs into optical microcavity such as Fabry-Perot, photonic crystal,
microdisk, and microsphere cavities [1,2]. However, the detail properties and lasing operationof TMDs in the microcavity still remains to be reported. Here, we have investigated the opticalproperties of microspheres-coupled monolayer WSe2 and WSe2/WS2 heterobilayer.
Figure 1(a) shows photoluminescence (PL) spectra of monolayer WSe2 with and without
polystyrene microsphere (diameter: 10 μm). Several sharp peaks observed in the PL spectrafrom intra-layer exciton suggest the strong confinement of emitted light in the microsphere andresonances originating from Whispering-gallery mode(a)(WGM). The calculated Q-value is approximately
1000,
suggests
superior
performanceof
microspherical optical cavity due to their smoothsurface and total internal reflection repeated on thesurface without optical loss. We also show the PL
spectraofmicrosphere-coupled
WSe2/WS2
heterobilayer in Fig. 1(b). The sharp resonance peaks
both from intra-layer exciton above 1.7 eV and interlayer exciton below 1.6 eV have been observed(b)originating from WGM in the PL spectra. We will
discuss the details of coupling to microsphere of outof- and in-plane light emission from intra- and interlayer exciton, respectively, based on finite-differencetime domain (FDTD) simulation. Our results would
pave the way for using this highly efficient coupling of
microspherical optical cavity and TMDs towards onchip low-threshold micro-lasers and optical circuits.
[1] S. Wu et al., Nature 520, 69 (2015).
[2] E. Y. Paik et al., Nature 576, 80 (2019).

Figure 1. (a) PL spectra of 10 μm polystyrene
coupled monolayer WSe2. Inset shows opticalimage. (b) PL spectra microsphere coupled to
WS2/WSe2 heterobilayer. Inset shows in interlayer exciton region.

Corresponding Author: K. Matsuda
Tel: +81-774-38-3460, Fax: +81-774-38-3467
E-mail: matsuda@iae.kyoto-u.ac.jp- 53 -

1P-10Electrical Transport Properties of W6Te6 Nanowire Network Films○Iori Kikuchi1, Hiroshi Shimizu2, Hong En Lim2, Takahiko Endo2,
Yusuke Nakanishi2, Yasumitsu Miyata2, Jiang Pu1, Taishi Takenobu1
1

Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan
Department of Physics, Tokyo Metropolitan University, Tokyo 192-0397, Japan

2

Transition metal chalcogenide nanowires are one-dimensional (1D) van der Waals materials
and, in principle, the absence of dangling bonds allows the formation of various shapenanostructures, such as 1D wires, 2D layers and 3D bundles. Indeed, a 1D transport behavior,Tomonaga-Luttinger liquid (TLL), have been reported by the top-down isolation of 1D wires
from 3D single crystals [1]. However, the structural control was still difficult and the bottomup method was strongly required. Recently, we established a CVD growth method of W6Te6
and realized the bottom-up control of nanostructure, such as 2D layers and 3D bundles (Fig. 1)[2]. Here, we challenged the systematic fine control of W6Te6 nanostructures from 3D bundles
to 1D wires using air exposure. As shown in Fig. 1, the surfaceof bundles is covered by amorphous layer, which is caused byair due to the chemical instability of W6Te6 ; so that, we tried
to tune the structure via gradual atmospheric exposure.
Two-terminal electrodes were formed on W6Te6 networks andwe measured the temperature dependence of electricalresistance and magnetoresistance to investigate the airexposure time dependences. As shown in Fig. 2, as-grownsample exhibited metallic temperature dependence at
higher temperature and 2D weak anti-localization(WAL) at low temperature. However, the air exposurechanged the network properties from metallic toinsulator (Fig. 2) and the vanish of 2D WAL was also
confirmed by magnetoresistance. Very importantly, theobserved insulative behavior was explained by neither
thermally active nor variable range hopping, and,Fig.1 Structure and TEM of
W6Te6 samples

finally, the current-voltage characteristics strongly
indicate TLL. These results suggest the continuous
Fig.2 Temperature dependence oftuning from 2D metallic to 1D TLL behavior, offering
electrical resistancea new route to control morphologies and transport properties in W6Te6 network.
[1] Venkataraman, L.et al. Phys. Rev. Lett. 83, 5334 (1999).
[2] Lim, H. E. et al. Nano Lett. 21, 243 (2021).
Corresponding Author: T. Takenobu, Tel/Fax: +81-52-789-5173,
E-mail: takenobu@nagoya-u.jp- 54 -

1P-11
Antibody-conjugated polymer wrapped single-walled carbon nanotube
for photothermal therapy via near-infrared light○Yukiko Nagai1, Kenta Nakamura1, Jun Ohno2, Tsuyohiko Fujigaya1,3,4
1

Department of Applied Chemistry, Graduate School of Engineering, Kyushu University, 744 Motooka,
Fukuoka, Japan. 2Center for Regenerative Medicine, Fukuoka Dental College, Fukuoka, Japan.
3
WPI I2CNER, Kyushu University. 4Center for Molecular Systems, Kyushu University.

Near-infrared (NIR) triggered photothermal therapy (PTT) is one of the attractive
candidate for cancer treatment due to its non-invasiveness. Single-walled carbon nanotubes(SWCNTs) are promising materials for PTT owing to their strong absorption in NIR region as
well as their high photothermal conversion efficiency and excellent photostability. To reduce
potential side effects, the cancer cell selectivity is desirable, which requires SWCNTs to be able
to bioconjugate with some type of targeting groups, such as an antibody, without losing unique
SWCNT natures. Previously, we reported an unique method to coat SWCNT surface by a crosslinked polymer keeping intrinsic structure of SWCNTs through a process called CNT Micelle
Polymerization[1] and successfully introduced maleimide groups, that allowed for the postmodification of thiol-containing molecules.[2] Importantly, the cross-linked polymer layer
functions not only to conjugate the antibody but also to disperse SWCNTs so that no additional
dispersant is necessary in our system. In this presentation, we demonstrate a conjugation of theantibody with maleimide-polymer coated SWCNTs, their selective recognition of cancer cells
and killing of the cells via the PTT effect in vitro. [3] (Fig.1)

Fig. 1 Schematic illustration of the post-modification of single-walled carbon nanotubes (SWCNTs) with thiolfunctionalized antibodies via maleimide groups and the use of the antibody-conjugated SWCNTs in the PTTtriggered killing of cancer cells.

Here, we conjugated maleimide-polymer-coated SWCNTs
with an antibody against TRP-1, a melanoma specific protein, for the
PTT of the B16F10 melanoma cell line. The B16F10 melanoma cellson the dish, which had been incubated with the anti-TRP-1 conjugated
SWCNTs (TRP-SWCNTs), were irradiated with an NIR laser using an
optical microscope. Two dyes, Calcein-AM and PI, were used to stain
living cells and dead cells, respectively. Indeed, cells treated with TRPSWCNTs showed a remarkable decrease in the fluorescence from theCalcein-AM after NIR irradiation (Fig.2, left panels), while thefluorescence from the PI staining could be clearly observed (Fig.2, Fig. 2 Fluorescence microright panels), which indicated that the PTT-triggered killing of the scopy images of B16F10
B16F10 melanoma cells via TRP-SWCNTs.
treated with TRP-SWCN-

Ts (up) and following NIR[1] T. Fujigaya et al., RSC Adv., 4, 6318 (2014). [2] Y. Nagai et al., J. Am. Chem.
irradiation (bottom).
Soc., 140, 8544 (2018). [3] Y. Nagai et al., ACS Appl. Bio Mater. 4, 5049 (2021).
Corresponding Author: T. Fujigaya
Tel: +81-92-802-2842, Fax: +81-92-802-2842, E-mail: fujigaya.tsuyohiko.948@m.kyushu-u.ac.jp- 55 -

1P-12
Effect of dispersant on supported state and electrocatalytic properties of Pt
nanoparticles on single-walled carbon nanotubes○Yuho Abe1 and Hironori Ogata1,2
1Department of Chemical Science and Technology, Hosei University
2
Research Center for Micro-Nano Technology, Hosei University
E-mail: hogata@hosei.ac.jp

A direct methanol fuel cells(DMFCs), which is a type of solid oxide fuel cell(SOFC), is
expected as a next generation energy supply source. DMFCs are one of the most promisingtransportable power sources which can be used in mobiles, laptops, and small power generation.
The basic operation principle of DMFCs involves methanol oxidation and oxygen reduction on
the precious metal catalysts, which are carbon supports as well as catalyst particle size andshape plays a dominant role in the electrochemical performance for fuel cells. The mostimportant advantage of DMFCs over other types of fuel cells is that methanol can integrate
effectively with transmission and distribution systems that already exist. However, there aretechnological challenges for the commercialization of DMFCs that remain unsolved [1,2,3,4].
The basic operation principle of DMFCs involves methanol oxidation and oxygen reduction on
the precious metal catalysts, which are loaded on the support surfaces. As is well-known, thedispersion of Pt-based nanoparticles on carbon supports as well as catalyst particle size andshape plays a dominant role in the electrochemical performance for DMFCs.
In this study, we investigated suitable dispersants for the purpose of improving theelectrocatalytic activity of Pt-based nanoparticle-supported single-walled carbon nanotubes(SWNTs) films for the electrode of DMFCs fabricated by the liquid phase reduction method.
In the dispersion of SWNTs, several kinds of aromatic molecules were used as dispersants, andthe difference in the supported state of Pt-based nanoparticles and the effect on theelectrocatalytic activity were systematically investigated.
The detailed results will be presented.

References:[1] N. Pongpichyakul et al., Springer Nature, 50, 51-62 (2019).
[2] S.K.Kamarudin et al., Applied Catalysis B: Environmental, Elsevier, 262, 118217 (2019)[3] I. Martinalou et al., International Journal of Hydrogen Energy, Elsevier, 34, 6902-6916 (2009)[4] Zhipeng Wang, Mao Shoji and Hironori Ogata, Appl. Surf. Sci, 259, 219-224 (2012).
Corresponding Author: H.Ogata
Tel: +81-42-387-6229, Fax: +81-42-387-6229,
E-mail: hogata@hosei.ac.jp- 56 -

1P-13
Catalyst-Free Synthesis of Highly-Crystalline Free-Standing Boron
Nitride Nanotube Films○Shuhui Wang1, Ming Liu1, Ya Feng1, Keigo Otsuka1, Esko I. Kauppinen2, Shohei
Chiashi1, Rong Xiang1, Shigeo Maruyama1
1
2

Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan

Department of Applied Physics, Aalto University School of Science, Espoo 15100, FI-00076
Aalto, Finland

Boron nitride nanotube (BNNT) has attracted considerable attention in various
scientific fields due to its outstanding optical, thermal, and electrical (dielectric andinsulating) properties [1]. We have demonstrated a CVD synthesis of one-dimensional
heterostructures, where single-walled carbon nanotube (SWCNT), BNNT andmolybdenum disulfide nanotube (MoS2NT) are coaxially nested [2]. The enhanced
thermal conductance of the heterostructured SWCNT@BNNT films makes them apromising building block for thermal and optoelectronic applications [3]. We alsoachieved removing the inner SWCNT from SWCNT@BNNT films by an oxygenannealing process [4].
Based on our optimization of 2D hexagonal boron nitride (h-BN) growth ongraphite [5], where the large size of monolayer h-BN with high quality was grown at
higher temperature (1250 °C), we expect that higher growth temperature might help
synthesize high-quality BNNTs. Thus, we studied the optical properties of
SWCNT@BNNT film samples grown at different temperatures (1075 °C [2-4] and1250 °C) as well as BNNT film samples by Raman spectroscopy, Fourier transformed
infrared (FTIR) spectroscopy, and Ultraviolet-visible-near-IR (UV-vis-NIR) spectroscopy.
Furthermore, the crystalline structure of BNNTs and by-products such as h-BN flakes
were observed by high-resolution TEM. This study will help better understanding of thesynthesis of high-quality BNNTs.
[1] D. Golberg et al. Adv. Mater, 19, 2413 (2007).
[2] R. Xiang et al. Science, 367, 537 (2020).
[3] P. Wang et al. ACS Nano, 14, 4298 (2020).
[4] M. Liu et al. ACS Nano, 15, 5600 (2021).
[5] H. Arai et al. Nanoscale, 12, 10399 (2020).
Corresponding Author: Shigeo Maruyama
Tel: +81-3-5841-6421, Fax: +81-3-5800-6983, E-mail: maruyama@photon.t.u-tokyo.ac.jp- 57 -

1P-14

Influence of carbon source pyrolysis on high-temperature CNT growthfrom solid carbon growth seeds○

Mengyue Wang1, Michiharu Arifuku2, Noriko Kiyoyanagi2, Masamitsu Satake2, Taiki Inoue1,
Yoshihiro Kobayashi1
1Department of Applied Physics, Osaka University, Osaka 565-0871, Japan
2
Nippon Kayaku, Tokyo 115-8588, Japan

Carbon source decomposition process in gas phase is one of factors that influence chemical
vapor deposition (CVD) system for carbon nanotube (CNT) synthesis, especially in CNT
growth from non-metallic growth seeds. Various gas phase pyrolysis pathways of carbon source
species were studied [1, 2]. In our previous work [3], C2H4 was used as carbon feedstock forhigh-yield and high-quality CNT growth from solid carbon growth seeds through two-stage
growth process, and carbon dioxide (CO2) was used as the etchant to prevent deposition of
amorphous carbon (a-C). Nevertheless, it lacks the illustration about carbon source pyrolysis
behavior in gas phase as well as the explanation for the weaker etching result while using
stronger etchant, water vapor (H2O), in such growth system. In this work, we performed acomparative study of CNT growth by using different carbon feedstock (C2H2, C2H4) andetchants (H2O, CO2). Based on the obtained results, carbon source pyrolysis with and without
etchant in CNT growth at high temperature is discussed.
Growth seeds were formed by heating nanodiamond at 1000℃ in Ar for 1 hour. In the twostage growth process, CNT growth behavior was compared with employing different carbon
sources, C2H2 and C2H4. In the first stage for cap formation (1 min), temperature and carbon
source partial pressure were adjusted to 850 ºC and 1 Pa for C2H2, and 900 ºC and 20 Pa forC2H4. Then, for the second growth stage, the temperature was increased to 1000ºC for nanotube
growth (30 min). The carbon source partial pressure was kept at 0.5 Pa for C2H2 and 5 Pa forC2H4. The quality (G and D bands) and yield (G band observation frequency) of the grown
CNTs were characterized by Raman spectra using 633 nm excitation.
Raman spectra in Fig. 1 compare the growth behavior withdifferent carbon feedstock utilized in two-stage growth andwith/without etchant injection. The growth condition for thesesamples was optimized for high-quality CNT growth. When using
C2H4 as the carbon feedstock (Fig. 1(b)), the intensity of D band,
which represents the deposition of a-C in this case, did not show any
distinct decrease even after the injection of H2O. On the other hand,
D band decreases a lot with CO2 injection, in contrast to the case of
C2H2 in Fig. 1(a). According to the milder etching effect presented in
our previous study, C2H4 assisted high temperature CNT growth [3],CO2 tends to prevent the formation of a-C before it is deposited on
the surface of growth seeds, which means CO2 is more likely to
influence a-C deposition through gas phase reaction. The
hydrocarbon pyrolysis reaction study [1] shows that, in the case of
C2H4, formation rate of intermediate C4 species is higher than further
Fig. 1 Raman spectra ofpyrolysis reaction rate. This causes the excessive C4 species, which CNTs grown from C H (a)2 2
is easier to be eliminated by CO2. In the case of C2H2, other excessive and C2H4 (b) with or without
intermediates formed during pyrolysis process, which are easier to be the injection of etchanteliminated by H2O. This indicates that the species of intermediates (water vapor or carbon
formed by different carbon sources during pyrolysis process dioxide) in the two-stage
influence CNT growth efficiency at high temperature.
growth system.
[1] K. Norinaga et al., Ind. Eng. Chem. Res., 46 (2007), 3547-3557. [2] N. Yang et al., Carbon, 130 (2018), 607613. [3] M. Wang et al., JSAP Autumn Meeting 2019, 21a-PB1-1., M. Wang et al., JSAP Spring Meeting 2020,
8p-z29-1.
Corresponding Author: Y. Kobayashi, E-mail: kobayashi@ap.eng.osaka-u.ac.jp- 58 -

1P-15Highly crystalline single-walled carbon nanotubes by microplasma-assisted
gas-phase chemical vapor deposition○Guohai Chen1, Takashi Tsuji1, Yoshiki Shimizu2,3, Jaeho Kim4, Hajime Sakakita4, Kenji
Hata1, Don N. Futaba1, Shunsuke Sakurai1
1

CNT-Application Research Center, National Institute of Advanced Industrial Science and Technology(AIST), Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
2
Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology(AIST), Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
3
AIST-UTokyo Advanced Operando-Measurement Technology Open Innovation Laboratory(OPERANDO-OIL), National Institute of Advanced Industrial Science and Technology (AIST),
Kashiwa Research Complex, II 5-1-5, Kashiwanoha, Kashiwa, Chiba 227-8589, Japan
4
Innovative Plasma Processing Group, Research Institute for Advanced electronics and Photonics,
National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono,
Tsukuba, Ibaraki 305-8568, Japan

Carbon nanotubes (CNTs) have attracted extensive attention due to their exceptional
properties [1-3]. Among all the structural features of CNTs, crystallinity and length have beenshown to be crucial for transferring the intrinsic properties of individual CNTs to themacroscopic scale. Despite great progress, the synthesis of single-walled CNTs (SWCNTs) withhigh crystallinity and long length remains a challenge [4].
In this presentation, we propose a microplasma-assisted, gas-phase synthesis of SWCNTs.
The synthesis consists of two components: first, a microplasma to generate appropriately sizedcatalyst nanoparticles. Second, a carbon source to contact the catalyst nanoparticles atdetermined timing to nucleate CNTs (Fig. 1a).
Therefore, this independent control of the catalyst
nucleation and CNT nucleation/growth affords aunique control of the carbon feeding to the active
nanoparticles. The CNTs were collocated onto afilter membrane and characterized by Raman, SEM
and TEM, etc., which showed high crystallinity anda small average diameter about 1.3 nm. (Fig. 1b).
The microplasma-assisted gas-phase processdemonstrates the potential to synthesize highquality small diameter SWCNTs, which is expected
to enable improved control over the diameter
distribution and CNT length.
[1]
[2]
[3]
[4]

Fig. 1 (a) Schematic of microplasma-assisted
G. H. Chen et al. ACS Nano, 7, 10218 (2013).
CVD setup and (b) as-synthesized SWCNTs.
G.H. Chen et al. Carbon, 170, 59 (2020).
G.H. Chen et al. ACS Applied Nano Materials, 4, 869 (2021).
H. Kimura et al. J. Am. Chem. Soc. 134, 9219 (2012).

Corresponding Author: G.H. Chen
Tel: +81-29-861-4416
Web: https://unit.aist.go.jp/cnta/ja/member/Guohai.html
E-mail: guohai-chen@aist.go.jp- 59 -

1P-16
Current-induced electrical path formation in random SWCNTs networks○Naoki Koga, Yuuma Matsuura, Masaki Ozawa
Department of Applied Chemistry, Meijo University, Aichi 468-8502, Japan

Current (mA)

Animals’ traffic generates desire paths on a woodland, which changes depending on how
much to be used. Likewise, signals travelling through networks of neurons residing in a brain
ceaselessly modify the connections of the nodes and the network structures themselves,
resulting in concurrent computing and memorizing. Inspired by the biological computing
systems, akin computing architectures, including the ones involving memristors as artificial
synapses, are intensely being developed. Going back to the desire paths, the key to construct
such systems is on positive feedback mechanisms together with gradual restoration. Such amechanism seems ubiquitous in nature, especially in flow systems, which evolve to provide
easier access to the imposed currents [1].
In this study, we examined a random network of single-walled carbon nanotubes (SWCNTs)
as a network system evolving through conducting electrons. MEIJO eDIPS SWCNTs sonicatedin sulphuric acid/nitric acid to give around 100 nm in length were suspended in polyacrylamidehydrogel, which were expected to support the network structures as well as to allow plasticity
for adjusting conditions of the electric contacts between the tubes. Then, voltage pulses wereapplied between wire electrodes spaced 1.0 mm apart in the gel thus prepared. The conductivityof the gel was found to increase until 1.0 wt% of the SWCNTs concentration, while it stays
nearly constant above it, indicating thepercolation threshold. Fig. 1 shows thevariations of the currents with time atpulsewith, frequency, and voltage of 50 ms,
1.4
1.0 wt%500 Hz, and 5 V, respectively, which flow
1.2
the gels with 0.1, 1.0, and 2.0 wt%
2.0 wt%1
SWCNTs. In each case, initial increase andsubsequent saturation of the current
0.8
starting at around 400 s was observed with
0.6
no noticeable electrophoretic behavior. An
0.4
interval more than 15 min allowed the gel
0.1 wt%to revert to the low conductive states,
0.2
which
presumably
demonstrates
0
improvement of electric contacts driven by0
200 400 600 800 1000 1200
the flowing electrons and thermalTime (s)perturbation. Furthermore, the networks ofdebundled short SWCNTs were also
investigated using different types of Fig. 1 Variations of the currents flowing through the gels
containing 0.2, 1.0, and 2.0 wt% of SWCNTs.
dispersants.
[1] A. Bejan, Int. J. Heat. Mass. Transfer, 40, 799 (1997).
Corresponding Author: M. Ozawa
Tel: +81-52-838-2410, Fax: +81-52-832-1179,
E-mail: mozawa@meijo-u.ac.jp- 60 -

1P-17
Temperature Dependence of the Thermoelectric Conductivity L12
in Semiconducting SWCNTs with Controlled Chemical Potential○Yota Ichinose1, Akari Yoshida1, Manaho Matsubara2, Shigeki Saito1, Kan Ueji1,
Yohei Yomogida1, Takahiro Yamamoto2, and Kazuhiro Yanagi1
Department of Physics, Tokyo Metropolitan University, Tokyo, Japan
Department of Physics, Tokyo University of Science, Shinjuku, Tokyo, Japan12

ln L12-1|S| (PVK )One-dimensional (1D) materials are expected to
exhibit the highest thermoelectric (TE) performance dueto their unique electronic structures [1]. Single-walledcarbon nanotubes (SWCNTs) are an ideal 1D model; thus,
we have investigated the relationship between their TE
properties and the location of the chemical potential,P[2]. Previously, we pointed out the importance of thethermoelectric conductivity, L12, to clarify the influenceof the line shape of density of state on the TE properties
Fig. 1. Device image.
of semiconducting SWCNTs [3]. Currently, we areinvestigating the behaviors of the temperature350
Gap
dependence of the properties because the mechanisms of
300
Edge
Band
the TE generation can be understood through temperature250
dependence. Here, in this study, we investigate the200
temperature dependence of L12, precisely controlling the
150
100
chemical potential, P, from the conduction (or valence)50
band to within the bandgap using an ionic liquid-based
0electric double-layer technique.
We prepared semiconducting SWCNTs with a0
50 100 150 200
Temperature (K)diameter of 1.4 nm. In addition, as shown in Fig. 1, we
Fig. 2. Temperature dependence of S.
constructed a new measurement device system
combining the electric double layer carrier injection‫ܮ‬ଵଶ ‫ ܶ ן‬௔Band
2method and the on-tip thermometer method, which caṉܽʹmeasure the temperature of the sample with the resistance1
Edgeof gold wires to measure the temperature dependence.
0̱ܽͶ
Figure 2 shows the temperature dependence of S
-1̱ܽͶ GapwhenP is located in the conduction band, at the band
-2edge, and within the bandgap of semiconducting-3
SWCNTs. While the behavior of S within the bandgap is
non-degenerate semiconductor-like, the other two show a
1.8
2.0
2.2
clearly different behavior seems to be variable range
ln T
hopping. However, L12 (=SVT) behaved quite differently Fig. 3. Temperature dependence of L12.
among the three parties. Figure 3 is a logarithmic plot of
L12 and T. The slope of L12 (‫ ܶ ן‬௔ ) was found to be systematically different. Thus, we foundthat L12 can show apparent changes in TE properties that cannot be seen by just looking at S as
P shifts. In this presentation, we will discuss the physical background in more detail.
[1] Hicks & Dresselhaus, PRB 47, 16631 (1993). [2] K. Yanagi et al., Nano Letters 14 (11), 6437 (2014).
[3] Y. Ichinose et al., PRM 5, 025404 (2021).
Corresponding Author: K. Yanagi, +81-42-677-2494, yanagi-kazuhiro@tmu.ac.jp- 61 -

1P-18Heat and charge-carrier flows in single-walled carbon nanotube film
during a vertical electrolyte-gating
�Nobuhiro Muto1, Kan Ueji1, Yuya Matsuoka1, Yota Ichinose1,
Yohei Yomogida1, Takashi Yagi1, Jana Zaumseil1, Kazuhiro Yanagi1
1Department of Physics, Tokyo Metropolitan University, Tokyo 192-0372, Japan
National Metrology Institute of Japan, National Institute of Advanced Industrial Science andTechnology, Tsukuba, Ibaraki 305-8563, Japan
3
Institute for Physical Chemistry and Centre for Advanced Materials, Universität Heidelberg, D-69120
Heidelberg, Germany
2

Along with the rapid development of the Internet-of-Things society, an integrated circuit forelectronics is miniaturized on a nanoscale over the years. In addition, improving theperformance of electronic elements generates a large amount of heat, which causes damage tothe circuit. Accordingly, thermal management is important to avoid thermal problems [1].
Flexible materials such as carbon nanotubes are attracting attention to address this problem.
Time-domain thermoreflectance (TDTR) method is an ultrafast laser-based technique (pumpprobe method) that can measure the thermal conductivity of nanoscale materials. In our system,a transducer for TDTR is a gold (Au) layer and the use of Au enables electrolyte gating. Thus,
we can clarify the thermal conductivity (�) and the electrical conductivity (�) in nanoscalematerials, such as single-walled carbon nanotube (SWCNT) and transition metal
dichalcogenides, with different gate voltage. The previous [2] elucidated the �- � relationshipof semiconducting SWCNT film but measurement directions are different: � and �
correspond to lateral and vertical directions, respectively. For intuitive understanding, we
employ a vertical electrolyte-gated transistor [3] where the channel direction corresponds to thefilm thickness, to match the measurement directions. In this study, we attempt to evaluate the�- � relationship of semiconducting SWCNT film with different Fermi levels to construct athermal switch driven by electricity.
The electrolyte gating system involving (6,5)
SWCNT film used an ionic gel as the gate
dielectric under a high vacuum. The electricalcharacteristics were determined by a sourcemeter and a digital multimeter. The film exhibits
ambipolar behavior with a clear on/off ratio of~105 (Fig. 1), indicating that the electrolyte fully
penetrated through SWCNT film, and thencarrier injection can be tuned even in verticaltransistor. Accordingly, the thermal conductivityof the SWCNT films with varying doping levels
when heat and carrier flows match can beevaluated by our TDTR system. The details of
this study will be further discussed during the
Fig. 1 Transfer characteristic of (6,5) SWCNT
presentation.
film in the vertical device.

[1] A. L. Moore et al., Materials today 17, 163–174 (2014)[2] K. Ueji et al., Applied Physics Letters 117, 133104 (2020)[3] M. Rother et al., ACS Appl. Nano Mater 1, 3616-3624 (2018)
Corresponding Author: K. Ueji and K. Yanagi
E-mail: kueji@tmu.ac.jp (K.U.), yanagi-kazuhiro@tmu.ac.jp (K.Y.)- 62 -

1P-19Dry Functionalization of Carbon Nanotubes While Retaining Intrinsic
Properties
Dewu Lin1, Don N. Futaba1, Kazufumi Kobashi1, Kenji Hata1
1

CNT-Application Research Center, AIST, Ibaraki 305-8565, Japan

Because of the chemical stable surface made of sp2 carbons, functionalization of CNTs has
been widely explored to modify the interfacial properties for advanced performance in specificapplications. Adding functional groups through solution-based wet chemistry has enabledresearchers to achieve abundant modification, however, the time-consuming and destructive
processes, including separation, purification, and collection, make it challenging to directly
functionalize pre-assembled CNTs without degrading the intrinsic properties.
Herein, we propose a convenient,solvent-free approach to perform interfacial
modification of CNTs without degrading the
intrinsic properties. Briefly, controlled
oxidation is carried out to introduce oxygencontained polar groups on the surface of the
CNTs [1], then by the activation withthermal heating, carbon free radicals are
generated for the following grafting withvarious monomers in gas phase (Figure 1A).
Thermogravimetric analysis (TGA) showed
3.4 wt.% of monomer methyl methacrylate
Figure 1. (a) Free radical addition mechanism of dry(MMA) was chemically bonded to the CNTs
(Figure 1B). More characterization by FTIR functionalization; (b) TGA profiles of dry
spectroscopy, contact angle, etc. confirmed functionalized CNTs (DF-CNTs) and original CNTs; (c)Comparison of crystallinity, conductivity, andthe covalent bonding of the MMA. Further mechanical properties.
investigation revealed that the oxidation
treatment was the destructive step due to the forming and growth of carbon vacancy defects.
Therefore, by a controlled and slow oxidation [2], we finally achieved dry functionalization of
CNTs while retaining intrinsic crystallinity, electrical conductivity, and mechanical strength,
which was confirmed by multiple characterization results (Figure 1C).
Such solvent-free interfacial modification is applicable to other graphitic nanocarbons withany pre-assembled structures. Further development will be focus on the improvement ofefficiency, including creating active sites and grafting.
[1] R. Menzel et al. Chem. Sci., 1, 603 (2010).
[2] T. Hiraoki et al. Adv. Funct. Mater., 20, 422 (2010).
Corresponding Author 1: Kenji Hata
Tel: +81-29-861-4551,
E-mail: kenji-hata@aist.go.jp
Corresponding Author 2: Don N. Futaba
Tel: +81-29-861-4402,
E-mail: d-futaba@aist.go.jp- 63 -

1P-20Aromaphilicity: the affinity for graphene and carbon nanotubes
determined by experiments and simulations
�Atsushi Hirano1, Tomoshi Kameda2, Momoyo Wada1, Takeshi Tanaka1, Hiromichi Kataura1
1

Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology(AIST), Ibaraki 305-8565, Japan
2
Artificial Intelligence Research Center, National Institute of Advanced Industrial Science andTechnology (AIST), Tokyo 135-0064, Japan

Molecular adsorption onto aromatic carbon nanomaterials is generally involved in various
phenomena, including physical and chemical reactions of these materials. Particularly inbiological systems, nonspecific protein adsorption is associated with their bioavailability andcytotoxicity. It is necessary to elucidate the molecular mechanism of protein–nanomaterialinteractions for understanding and predicting such biological impacts of the aromatic carbon
nanomaterials. We have ever examined the interactions of the carbon nanomaterials withproteins, polypeptides and amino acids [1–3]. Recently, a new concept ‘aromaphilicity’ wasproposed, which reflects the affinity for aromatic surfaces of the carbon nanomaterials [4]. The
aromaphilicity was determined for 20 amino acids contained in protein structures on the basisof their binding free energy onto graphene using molecular dynamics simulations. We here
show that experimental results obtained from liquid chromatographic analyses were consistent
with the simulation data. These findings are useful for predicting binding sites of proteins toaromatic carbon nanomaterial surfaces.
The aromaphilicity is indexed as the normalized value of the binding free energy of aminoacids onto graphene (Fig. 1a). High aromaphilicity is observed not only for aromatic aminoacids—tryptophan (Trp), tyrosine (Tyr) and phenylalanine (Phe)—but also for arginine (Arg).
We can draw protein surface profiles of the (a)aromaphilicity using the aromaphilicity index(Fig. 1b). Some proteins have affinity hot spots(high-aromaphilicity regions).
We performed liquid chromatography of Nacetyl amino acid amide compounds with an (b)aromatic side chain on a immobilized graphene
column. The retention data of these compounds
were consistent with the aromaphilicity trend(Fig. 2), which supports the validity of thearomaphilicity index obtained from the Fig. 1 (a) Aromaphilicity index of amino acids. (b)Surface profiles of the aromaphilicity of the henmolecular dynamics simulations.
egg-white lysozyme (left) and chicken histone

Corresponding Author: A. Hirano
Tel: +81-29-849-1064, Fax: +81-29-861-2786,
E-mail: hirano-a@aist.go.jp(right). The arrows and the dotted circle depict
affinity hot spots.
Normalized absorbanceat 245 nm[1] A. Hirano et al. Chem. Eur. J. 20, 4922–4930 (2014).
[2] K. Iwashita et al. Langmuir 31, 8923–8929 (2015).
[3] K. Iwashita et al. Chem. Lett. 45, 952–954 (2016).
[4] A. Hirano and T. Kameda. ACS Appl. Nano Mater.,
4, 2486–2495 (2021).

Fig. 2 Liquid chromatography of N-acetyl aminoacid amides on a immobilized graphene column.

- 64 -

1P-21

Photo-enhanced Responses of Gas Sensor
Based on MoS2 Monolayers to Various Biogas Species
ࠐT. Goto, R. Inao, H. Tabata, O. Kubo, M. Katayama
Division of Electrical, Electronic and InfocommunicationsEngineering, Graduate School ofEngineering, Osaka University, JAPANE-mail: goto@nmc.eei.eng.osaka-u.ac.jp
Thin layers of molybdenum disulfide (MoS2) have been attracting attention as an excellent gas
sensing material, because they have a unique property to exhibit an effective photoactivated gas
response under visible light, resulting in excellent sensitivity and a fast response / recovery at room
temperature [1]. Recently, we have reported that gas sensors based on MoS2 monolayer under thevisible light showed excellent performance to NO2 gas, with a sensitivity of 8.6%/ppb, and respondquickly to the changes in gas concentration [2]. However, the photoactivated response of the
MoS2 sensor has yet to be investigated for only a few gas species. In this study, we explore theresponses of the MoS2 sensor under light illumination to various biogas species such as NH3, H2, CH4,and ethanol and acetone vapors, which are beneficial to be monitored for human health care or medical
diagnostics, and aim to clarify the effect of light illumination on their responses and their mechanism.
Figure 1 shows the dynamic responses of the drain current of the monolayer MoS2 sensor upon the
exposure of various NH3 concentrations under light and dark conditions. A blue LED (peakwavelength:470 nm) was used as the light source, with a typical irradiance of 50 mw/cm2. Since NH3
acts as an electron donor, the drain current increased upon the NH3 exposure. Sensor response SG
defined as SG =100ǼI/I0, where ǼI is change in drain current during NH3 exposure, and I0 is theinitial drain current just before NH3 exposure, drastically increased under the light condition. Similar
trends were observed for the other four gas species. Table 1 summarized the sensor response in thedark and light conditions for each gas species. For all gas species measured, the sensor showed a
response of increasing current, which may mean that they are reducing gases. Even for the gas species
which cannot be detected in dark condition, the gas sensor clearly showed response to them under thelight condition. To explain the result, we proposed a model that the response was mediated by oxygenin air.

Figure 1. Dynamic response of the drain current upon the Table 1. Comparison of sensor response (SG) in the
exposure of various NH3 concentrations under light and dark and light conditions for each gas species
dark condition.

[1] T.Pham et al.,ACS Nano 13, 3196(2019).
[2]H.Tabata et al.,ACS Nano 15, 2542(2021).

- 65 -

1P-22                *$"$$    !$(

       ! # #! ( !# "$!" & # # #&" %##&!" #&" #!" $  ! #!" ! %!$" $#%""$"#!" #" ##!" )#!%" $"
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','+"%+,*"'%(' *"('"*,"('(**+)('"' -,!(* -+-&-$           &"% +($(&+,+-$-#)

- 66 -

1P-23
Raman spectroscopy of Weyl semimetal Co3Sn2S2○Kenya Tanaka1, Akira Takakura1, Yasumoto Segawa2,3, Taishi Nishihara1,
Kazunari Matsuda1, Yuhei Miyauchi1
1

Institute of Advanced Energy, Kyoto University, Uji 611-0011, Japan
2
Institute for Molecular Science, Okazaki 444-8787, Japan3
Department of Structural Molecular Science, SOKENDAI, Okazaki, 444-8787, Japan

Recently, Co3Sn2S2 has attracted much attention as a magnetic Weyl semimetal with atrigonal crystal structure of Kagomé lattice [1-3]. X-ray diffraction (XRD) and energy
dispersive X-ray (EDX) spectroscopy techniques have been used to identify the crystal structureof Co3Sn2S2. In addition to these techniques, Raman spectroscopy is known as a useful nondestructive optical method for obtaining information of phonon modes that are characteristic tothe crystal structure. Once the Raman spectral features of the crystal are identified, thecharacteristic Raman spectrum can be used as a fingerprint to rapidly identify the crystal
structure and confirm successful growth of the crystal without performing time-consuming
XRD and EDX measurements. However, Raman spectroscopic study on Co3Sn2S2 still remains
to be reported.
Here, we report Raman spectra of Co3Sn2S2 crystals and their crystal angle dependence. The
single crystals of Co3Sn2S2 were obtained by vacuum heating of the raw material powders(stoichiometric ratio of powders were Co:Sn:S = 3:2:2). The growth temperature of the crystals
was controlled as follows. The mixture sample powders were heated up to 1000 °C over 48
hours and held for 24 hours, and then it was slowly cooled down to 600 °C over 168 hours andkept at 600 °C for 24 hours [4]. The crystal structure of the synthesized material with a distorted
hexagonal shape was confirmed as Co3Sn2S2 using single crystal XRD and EDX spectroscopy
techniques (Figs. 1a and 1b). In the synthesized material, we also found bi-product crystals withelongated shapes that were identified as SnS by XRD and EDX. A plate-type Co3Sn2S2 flake(Fig. 1c) was picked up using a sticky polydimethylsiloxane (PDMS) film and transferred to asilicon substrate under an optical microscope. For Raman measurements, we built a home-madeoptical setup that allows polarization and crystal angle resolved optical measurements with anautomated sample rotation stage with a centering mechanism. In the measurements, linear
polarized 532 nm continuous laser was mainly used for the polarized excitation. Two major
peaks were observed in the wavenumberacrange from 250 to 400 cm-1. In thepresentation, we will discuss the origin of
the observed Raman features based on the
results of the polarization and angleresolved measurements.
[1] P. Vaqueiro et al., Solid State Sci. 11, 513(2009).
[2] D. Liu et al., Science 365, 1282 (2019).
[3] R. Yang et al., Phys. Rev. Lett. 124, 77403(2020).
[4] N. Morali et al., Science 365, 1286 (2019).

b

Corresponding Author: Y. Miyauchi
Tel: +81-774-38-3463,
E-mail: miyauchi@iae.kyoto-u.ac.jp

Figure 1. Crystal structure of Co3Sn2S2, (a) unit cell and(b) structure viewed from c-axis. (c) Typical opticalimage of the crystal. Scale bar, 20 μm.

- 67 -

1P-24
Helicity resolved Raman spectroscopy in MoS2
○Hirofumi Nema, Yasuhiro Fujii, Shogo Saito, Eiichi Oishi, Akitoshi Koreeda
Department of Physical Sciences, Ritsumeikan University, 1-1-1 Noji-higashi, Kusatsu, Shiga 5258577, Japanvan Der Waals materials such as graphite and MoS2 have been widely investigated after the
first fabrication of monolayer graphite film (graphene) by Novoselov and Geim et al. For thecharacterization of van der Waals materials, Raman spectroscopy is a useful and popular tool.
Recently, helicity-resolved Raman spectroscopy of graphite films has been carried out to obtain
information on interlayer interaction via chiral phonons [1].
Here, we report the helicity-resolved Raman spectroscopy in bulk MoS2. The in-plane relative
motion of transition metal and chalcogen atoms (IMC mode) and the out-of-plane motion
involving only chalcogen atoms (OC mode) were observed in our spectra (Fig.1). Similar
results were shown by Chen et al. [2].
Below 70 cm-1, two additional Raman peaks appeared (Fig.2). The peak around 33 cm-1
(around 6 cm-1) may correspond to the shear mode (breathing mode) between layers. Comparedto the results of 4-layer MoS2 [2], the peak of the breathing mode shifted to the lower wave
number in bulk, while that of the shear mode showed a little or no shift.

Fig. 1 Helicity resolved Raman spectra in bulk
MoS2 (between 360 cm-1 and 430 cm-1). L (R)represents left-handed (right-handed) circularly
polarized light.
[1] C. Chen et al., Phys. Rev. B 103, 035405 (2021).
[2] S.-Y. Chen et al., Nano. Lett. 15, 2526 (2015).
Corresponding Author: H. Nema
Tel: +81-77-561-5752, Fax: +81-77-561-5752,
E-mail: h-nema@fc.ritsumei.ac.jp- 68 -

Fig. 2 Helicity resolved Raman spectra in bulk MoS2
below 70 cm-1.

1P-25
Quasi-ballistic heat transport in graphene elucidated by isotopic interface
�Yoshito Hata, Kuniharu Takei, Seiji Akita, Takayuki Arie
Department of Physics and Electronics, Osaka Prefecture University, Sakai 599-8531, JapanDue to its outstanding thermal properties, graphene
is expected as a candidate for thermal management
devices. Since the main heat carrier in graphene isphonon, we investigated the control of heat
conduction by introducing isotopes [1] and defects[2]. In this study, we synthesized graphene periodic
structures with different isotope regions to control theheat conduction by the number of isotopic interfaces.
We synthesized isotopically separated graphene
heterostructures with isotopic interfaces byalternately suppling 12CH� and 13CH� as source gases
during chemical vapor deposition. The heat
conduction in graphene was evaluated by thetemperature- and laser power-dependence of Raman
peak shifts after fabricating the suspended structures.
Figure 1(a) and 1(b) show the optical microscope
and Raman 2D mapping images of graphene isotopic
heterostructures. The periodic heterostructures withthe width of approximately 500 nm were fabricated.
Figure 2 depicts the thermal resistance of suspended
graphene with respect of the interface number (N).
The thermal resistance increases linearly as N

Fig. 1. (a) Optical and (b) Raman 2D
mapping images of graphene isotopic
heterostructures.

Fig.2. Interface number-dependence of thethermal resistance in graphene.

increases up to N=3; the resistance per interface isestimated to be 151.1 �m2K/W. However, it begins to increase significantly at N greater than 4.
The width between interfaces at N=4 is around 560 nm, comparable to the reported phononmean free path in graphene at room temperature (䍜700 nm) [3]. The result implies that thethermal phonons behave in the quasi-ballistic transport regime when the width between
interfaces becomes equal to or smaller than phonon mean free path in graphene.
[1] Y. Anno et al., Phys. Status Solidi RRL 8, 692 (2014). [2] Y. Anno et al., 2D Mater. 4, 025019 (2017). [3] S.
Ghosh et al., Appl. Phys. Lett. 92, 151911 (2008).
Corresponding Author: T. Arie, Phone/Fax: +81-72-254-9265, E-mail: arie@pe.osakafu-u.ac.jp- 69 -

1P-26

Switching speed of optically-generated spin current at the graphene edge
○Yuan Tian, M. Shoufie Ukhtary, Riichiro Saito
Department of Physics, Tohoku University, Sendai 980-8578, Japan
Manipulation of spin current is a novel technique in the field of spintronics, which promises new andmore effective designs for memory storage and logic circuit [1,2]. Although methods for generating spincurrent that relies on the either spin Hall effect, spin injection or a spin valve are well established, theseconventional methods rely on either complicated structure or magnetic material, which limits the response
speed of spintronic devices. Recently, Daigo Oue et.al.[3] theoretically showed that by using the inverse
Faraday effect, surface plasmon on the surface of metal can induce a spin current in direction
perpendicular to the surface, due to the rotating electric field of the surface plasmon. In our recent paper[4], we further show that through the inverse Faraday effect, a spin current can be generated on graphene
via the excitation of the edge plasmon. An edge plasmon is an oscillation of charge accumulation that
propagates at the edge of a 2D surface. The edge plasmon induces a spin current that flows in plane, inthe direction perpendicular to the edge. The spin current consists of electrons with out-of-plane spinpolarization, as is shown in Fig. 1. Here we investigate the switching speed of the spin current generated
via the excitation of edge plasmon, which can be used as a tunable spin device with the response speed up
to GHz.
In this work, we study the response speed of spin accumulation generated via edge plasmon ongraphene. We obtain the analytical and the numerical solutions of the spin diffusion equation as afunction of time under a periodic source term representing the edge plasmon to study the switching speedof the device. We find a maximum spin accumulation up to 0.5 neV and the response time of less than 0.2
ns, as are shown in Fig. 2. Since the edge plasmon is generated by light, we can realize optical switchingof spin signal with response in GHz.
Reference:[1] Huai, Yiming, et al., AAPPS bulletin 18.6, 33-40, (2008).
[2] Maekawa, Sadamichi, et al., eds. Spin current. Oxford University Press, (2017).
[3] Oue, Daigo, et al., Physical Review B 101.16, 161404, (2020).
[4] M. S. Ukhtary, et al., Phys. Rev. B, 103, 245428-1-8, (2021).

Figure 1: Edge plasmon that propagates along the edge of 2D material (y-axis) which induces the magnetization
ࡹࢠ . The magnetization is localized at the edge, causing spin accumulation near the edge due to the inverse Faraday
effect. This distribution of spin accumulation will drive a spin current ࡶ࢙ that flows in x-direction.

Figure 2: Spin accumulation δμ near the edge (a) as a function of distance from the edge for continuous light.
(b) δμ as a function of time for the pulsed light. The edge plasmon is turned on and off in a period of 0.5 ns. The
response time of δμ is less than 0.2 ns.

Corresponding Author: Tian Yuan
Email: tian@flex.phys.tohoku.ac.jp- 70 -

1P-27
Metal Deposition on a Suspended Graphene Surface○Kawase Yuta1, Kenta Matsushima1, Juntaro Doi1, Tsutomu Araki1, Shinichiro Mouri1
1

Department of science and engineering, Ritsumeikan University, Shiga 525-8577, Japan

Crystal growth using graphene substrate called van der Waals Epitaxy (vdWE) has been
proposed as a way to fabricate transferable compound semicondeuctors[1,2]. Especially, it ispointed out that potential of ionic substrate under graphene promotes the quasi-homoepitaxial
crystal growth, named remote epitaxy [3,4]. These studies suggest the substrate under graphene
plays an essential role for vdWE resulting in obscuring the effect of graphene surface itself on
the crystal growth including atomic adsorption process. We here propose the platform using
suspended graphene to test the net effects of graphene surface on crystal growth or atomic scale
adsorption. The dispersion of deposited Indium or Gallium metal on graphene surface wasobserved using TEM.
Figure 1 show low magnification TEM image of Si3N4 grid
(EM Japan Co.). Many holes whose diameter is 2.5 ੇ, arearranged every 5 ੇ. The bilayer graphene was prepared on it
by wet process using the polymer PMMA.
Indium or Gallium metal was deposited on this grid with RFMBE setup. Figure 2 (a) and (b) show the TEM image of Indium
metal dispersed on graphene surface at different temperatures
425℃ and 350℃, respectively. The duration of metal supply
was five second. The small grain of Indium metal less than 50
nm diameter was dispersed in both cases however its pattern isdifferent reflecting deposited temperature. The grains werealigned in line according to the domain boundary or winkles of Fig. 1 Low magnification TEM
graphene when the deposition temperature was higher as shown image of the Si3N4 grid.
in Fig. 2 (a). The dangling bonds existing in these structures
could act as nucleation sites of metal cluster. On the other hand, the grains forms island likeclusters when the deposition temperature was lower as shown in Fig. 2 (b). The migration of
metal is suppressed, and the nucleation may occur outside the domain boundaries. In thepresentation, we would discuss the detailed analysis including the relationship between thenumber of metals and metal size with changing deposited temperature.
References[1] J. Kim et. al., Nat. Commun. 5,4836 (2014).
[2] W. Kong et. al., Nat. Mater. 17,
999 (2018).
[3] Y. Kim et. al., Nature 544, 340(2017).
[4] D. Dobrovolskas, S. Mouri, T.
Araki, et. al., Nanomaterials 9, 417(2019).
Fig. 2 Distribution of Indium metal of suspended graphene.
Deposit temperature of (a) is 425Υ, and (b) is 350Υ.

This work was supported by JPSJ KAKENHI, #21H01831ࠊ#21H01017ࠊ#16H06415.

- 71 -

1P-28Synthesis of Boron Nitride Nanotubes
Using Solid Boron, Water Vapor, and Ammonia○Takazumi Kaida1, Hiromu Takahashi1, Toshio Osawa1, Hisashi Sugime2, Suguru Noda1,2,*
1

Department of Applied Chemistry, 2 Waseda Research Institute for Science and Engineering, Waseda
University, Tokyo 169-8555, Japan.

Boron nitride nanotube (BNNT) is a one-dimensional nanomaterial that has hightensile strength with mechanical flexibility, and is thermally and chemically stable, thermallyconductive, and electrically insulative [1]. Various applications including thermal interface
materials and battery separators are expected, and low-cost production is essential to make those
applications practical. BNNTs can be synthesized by high-temperature processes that use
thermal plasma or laser to vaporize solid boron or h-BN [2]. However, the BNNTs are still very
expensive due to the very high process temperatures and the difficulties in scaling-up. Chemical
vapor deposition (CVD) processes at lower temperatures are also researched [1]. Among them,
the boron oxide CVD (BOCVD) that uses B2O2 vapor formed in the reaction between B andB2O3 powders is attractive for the low-cost boron source. However, it is difficult to control theinterface reaction between solid B powder and B2O3 melt (melting point of ~450 qC).
Here we report the gas-vapor reaction of 2B(s) + 2H2O(g) Ѝ B2O2(g) + 2H2(g) forthe controlled feed of B2O2 vapor. We used an externally heated CVD reactor made of a quartz
glass tube and set an inner quartz glass tube for the B2O2 supply. B powder was set in the innertube, heated by the reactor furnace, and reacted with H2O vapor. The Fe catalyst (1.2–3.8nm)/Al2O3 underlayer (1.0 nm)/graphite substrate was prepared by sputter-deposition, set in the
CVD reactor, and heated to 1050 qC under an Ar flow. Then H2O(g) was fed to the inner tube
for the B2O2 supply for 5 min, and CVD was carried out by flowing NH3(g) for 10 min. In
scanning electron microscope (SEM) images, notubes were observed for Fe/graphite while manytubes were observed for Fe/Al2O3/graphite. The
reaction between B(s) and H2O(g) proved
effective for supplying B source and the Al2O3
layer proved effective for enhancing catalytic
activity of Fe for BNNT growth.
Fig. 1. Plan-view SEM images of the substrates
after CVD. (a) Fe/graphite. (b) Fe/Al2O3/graphite.
[1] E. Songfeng, et al., Chem. Phys. Lett., 687, 307 (2017).
[2] K.S. Kim, et al., Semicond. Sci. Technol. 32, 013003 (2017).
Corresponding Author: S. Noda, Tel: 03-5286-2769, E-mail: noda@waseda.jp- 72 -

1P-29Indium intercalation in bundles of WTe atomic wires○Hiroshi Shimizu1, Zheng Liu2, Hong En Lim1, Yusuke Nakanishi1,
Takahiko Endo1 and Yasumitsu Miyata1
12Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
Innovative Functional Materials Research Institute, AIST, Nagoya 463-8560, Japan

One-dimensional (1D) transition metal chalcogenides (TMCs) have recently received
significant attention due to their atomically thin wire structure and excellent conductive
properties. Recently, we had achieved a scalable growth of highly crystalline, conductive
TMC atomic wires using chemical vapor deposition (CVD) [1]. To further improve theirconducting properties, highly efficient carrier injection is required. One of the promising
ways to realize such purpose is via metal atom intercalation (Fig.1a). However, there is
no study on the intercalation for TMC bundles.
In this study, we have investigated the In intercalation into bundles of WTe atomic
wires. WTe wires were grown on SiO2/Si substrates by CVD as reported previously [1].
The intercalation was carried out by vacuum deposition of In thin film. The crosssectional HAADF-STEM observations reveal the presence of intercalated atoms between
individual WTe wires (Fig. 1b). The distance between WTe wires has increased by 1.8%
compared to that before the intercalation. In addition, a downshift in the peak at 155 cm1
has also been observed in the Raman spectra (Fig. 1c). These serve evidences for therealization of In intercalation in WTe bundles. The present results provide an effective
approach not only for tuning the electric properties of WTe wires but also for therealization of a novel ternary telluride group.

Figure 1 (a) Structure model and (b) Cross-section HAADF−STEM image of In intercalated WTe bundle.
Scale bar = 1 nm. (c) Raman spectra for WTe bundle before and after the In intercalation.
[1] H. E. Lim et al., Nano Lett., 21, 1, 243-249 (2021).
Corresponding Author: Y. Miyata, Tel: +81-42-677-2508, E-mail: miyata-yasumitsu@tmu.ac.jp- 73 -

1P-30Carbon nanotube and boron nitride nanotube make battery
lighter and safer○Kentaro Kaneko1, Keisuke Hori1, Suguru Noda1,2
1

2

Department of Applied Chemistry, Waseda University, Tokyo, Japan.
Waseda Research Institute for Science & Engineering, Waseda University, Tokyo, Japan

Safety is getting more important for batteries with increasing energy density. We propose
inorganic nanotube architecture to develop lighter and safer lithium-ion battery [1]. Differently
from the conventional conductive additives such as carbon black and carbon nanofibers,
electrically conductive carbon nanotube (CNT) can have multiple roles in battery electrodes.
We have previously reported light-weight electrodes, in which 99 wt% active materials were
held in the 1 wt% CNT sponge that worked as binder, conductive filler, and current collector[2]. In contrast, boron nitride nanotube (BNNT) is electrically insulative, thus can be used forseparator. Both CNT and BNNT have high thermal stability compared to organic polymer.
Self-supporting electrodes were fabricated with submillimeter-long few-wall CNT(prepared by fluidized bed CVD method [3]) and active materials (lithium cobalt oxide orgraphite) by dispersion and filtration. Similarly, self-supporting separator (~25 μm thickness)
was fabricated via dispersion and filtration of BNNT without using binder. The mass fractionof non-active materials in the electrodes/separator stack decreased to 6.4% with the nanotubebased architecture from 25.0% of the conventional one (Fig. 1).
The thermal stability of the electrodes/separator stack was examined by heating in a N2 flowfor 10 min, and then testing the electrical insulation between the positive and negativeelectrodes. Differently from the conventional polyolefin separators that melt at ~150 qC, nodamage was observed in the BNNT separator after heating at 500 °C. Furthermore, the battery
made of the heated stack with fresh electrolyte functioned correctly. The nanotube-basedarchitecture makes batteries lighter and safer.

Fig. 1. Structure and mass fraction of conventional and nanotube-based architecture [1].
[1] K. Kaneko, K. Hori, and S. Noda, Carbon 167, 596 (2020).
[2] K. Hasegawa and S. Noda, J. Power Sources 321, 155 (2016).
[3] M. Li, M. Risa, T. Osawa, H. Sugime, and S. Noda, Carbon 167, 256 (2020).
Corresponding Author: S. Noda
Tel: +81352862769, Fax: +81352862769

E-mail: noda@waseda.jp- 74 -

1P-31
Chemically-enriched and integrated carbon nanotube photo-thermoelectricscanners for non-sampling, source and label-free chemical monitoring○Kou Li1,2, Yukio Kawano1,2,3
1

Laboratory for Future Interdisciplinary Research of Science and Technology, Tokyo Institute ofTechnology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan2
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1
Ookayama, Meguro-ku, Tokyo 152-8550, Japan
3
Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551,
Japan

The use of carbon nanotube (CNT)-based electronics devices accelerates diverse sensing
applications. In particular, the photo-thermoelectric (PTE) effect with CNT films makes themost of interesting characteristic of CNTs as broadband electromagnetic-wave sensing withfreely deformable configuration[1]. Here, we demonstrate non-sampling, source and label-freechemical monitoring by simply wrapping containers with chemically-enriched and integrated
CNT film PTE scanners. The PTE device design on the CNT films enhances photo-induced
chemical monitoring sensitivity, and the mechanical flexibility of the device firmly attaches toarbitrary-structured contains. These relax conventional experimental constraints of chemicalmonitoring, and facilitates future versatile and ubiquitous on-site use.
Fig. 1a depicts the proposed structure of the PTE scanner. The channel of the device consistsof multiple series integration of P- and N-type[2] CNT films. This structure enhances photodetection sensitivity of the device by adding up PTE responses in each pair of P- and N-type
CNT films. This device design therefore facilitates non-destructive, non-sampling, source andlabel-free chemical monitoring as shown in Fig. 1b. Chemical substances, which are dissolved
in solvent liquid and circulated by a digital pump, can be examined by simply wrapping outersurface of a soft tube with the proposed device. The use of broadband black-body radiation(BBR) from the solvent develops compact measurement configuration without employing
bulky external photo sources. Here, in-liquid chemical substances locally absorbs the BBR fromthe solvent and passive responses obtained by the proposed device show associated reduction
after dissolving glucose (Fig. 1c). This phenomenon advantageously governs concentration
monitoring in circulating solvent in a non-sampling and label-free manner.

Fig. 1. a, Schematic of the proposed device. b, Setup of the chemical testing measurement with the proposed
device. c, Demonstration of the in-liquid glucose detection in a non-sampling, source and label-free manner.
[1] K. Li, et al. Nat. Commun., 12, 3009 (2021).
[2] Y. Nonoguchi, et al. Adv. Funct. Mater., 26, 3021–3028 (2016).
Corresponding Author: K. Li
Tel: +81-3-3817-1860
E-mail: lee.k.al@m.titech.ac.jp- 75 -

1P-32
Photoluminescence property changes of aryl-modifued locallyfunctionalized single-walled carbon nanotubes by ortho-substituent effects
1○Sadahito Naka1, Tsuyohiko Fujigaya1,2,3, Tomohiro Shiraki1,2

Graduate School of Engineering, Kyushu University, Fukuoka 819-0395, Japan
2
WPI-I2CNER, Kyushu University, Fukuoka 819-0395, Japan
3
Center for Molecular Systems, Kyushu Univ, Fukuoka 819-0395, Japan

Single-walled carbon nanotubes (SWCNTs) with semiconducting features show near infrared
photoluminescence (PL), which is applicable to various optical applications including
bioimaging probes and telecom devices. In particular, locally functionalized SWCNTs (lfSWCNTs), which are synthesized by slight amount of chemical modification have beenreported to show E11* PL with red-shifted wavelengths and enhanced quantum yields comparedto E11 PL of pristine SWCNTs [1,2]. E11* PL is generated by the formation of luminescent doped
sites with narrow band gaps based on sp3 carbon defect doping to sp2 carbon network structuresof SWCNTs. As a characteristic of lf-SWCNTs, the wavelengths of E11* PL sensitively change
depending on chemical structures of modifier molecules. We have reported that substituted aryl
modification for lf-SWCNTs synthesis largely changed PL emission properties. Especially, thelf-SWCNTs synthesized using ortho-substituted aryldiazonium salts (oADs) showedremarkably red-shifted PL by ~150 nm than E11* PL peaks for typical lf-SWCNTs [3]. In thisstudy, we investigate ortho substituent effects on the newly observed PL of the aryl-modified
lf-SWCNTs based on substituent structure changes.
The synthesized modifiers are oAD with different aliphatic
substituents (oAD-R; R = methyl (Me), ethyl (Et), isopropyl(iPr)). For local chemical functionalization, oAD-R was
mixed with solubilized SWCNTs in an aqueous micellesolution.
Fig. 1 shows a PL spectrum of SWCNTs reacted with oADiPr (lf-SWCNTs-oiPr). Three PL peaks were observed at 980,
1156, 1306 nm. The emissions at 980 nm and 1156 nm areassigned to E11 PL from the pristine sites and E11* PL fromthe typical doped sites of lf-SWCNTs. The emission at 1306
nm appeared at a similar wavelength region to PL specificallyobserved for our previous lf-SWCNTs synthesized by ortho- Fig. 1 PL spectrum of lf-SWCNTsoiPr. λex = 570 nm.
substituted aryl modifications [3]. Interestingly, thewavelength of this peak was red-shifted by changing the substituent structures from Me to iPr.
In molecular mechanics simulations, the crystalline lattice structures of SWCNTs tended to beslightly distorted (ca. 0.70 %) due to steric hindrance with the ortho-substituents. Therefore,
the ortho-substituted aryl modification could provide a new tool to modulate the near infrared
PL wavelengths of lf-SWCNTs based on strain engineering approaches.
[1] T. Shiraki et al., Acc. Chem. Res. 2020, 53, 1846. [2] Y. Wang et al., Nat. Rev. Chem. 2019, 3, 375[3] T. Shiraki et al., Chem. Commun. 2017, 53, 12544.
Corresponding Author: T. Shiraki
Tel/Fax: +81-92-802-2841/ +81-92-802-2841
Web: http://www.chem.kyushu-u.ac.jp/~fifth/jp/
E-mail: shiraki.tomohiro.992@m.kyushu-u.ac.jp- 76 -

1P-33
Pure and Efficient Single-Photon Sources by Shortening andFunctionalizing Air-Suspended Carbon Nanotubes

1

Shuma Oya1, Rintaro Kawabe 1, Hiroshi Takaki1, Takayuki Ibi1, Yutaka Maeda2, Kenta
Nakagawa1,3, and Hideyuki Maki1,4

Department of Applied Physics and Physico-Informatics, Keio University, Hiyoshi, Yokohama 2238522, Japan2
Department of Chemistry, Tokyo Gakugei University, Koganei, Tokyo 184-8501, Japan
3
Kanagawa Institute of Industrial Science and Technology (KISTEC), Ebina, Japan
4
Center for Spintronics Research Network, Keio University, Yokohama 223-8522, Japan.

Room temperature operating on-chip single photon source (SPS), is a desired nanophotonic
device which widens the application of quantum information technologies such as quantum
communication. Single-walled carbon nanotube (SWCNT) has been thought to be a goodcandidate for such devices, for its stable exciton characteristics with telecommunication
emission wavelength [1]. In this study, we theoretically propose high-performance SPSs thatexhibits both high-purity and high-efficiency single-photon generation by using short andfunctionalized air-suspended SWCNTs [2].
We investigated the dynamics of excitons, such as exciton diffusion, exciton−exciton
annihilation (EEA), and end quenching, on a single, pristine or functionalized, SWCNT byMonte Carlo simulations. As shown in Fig.1, we found out that shortening of SWCNT
enhances end quenching, and together with exciton confinement by functionalization, highprobability of single excitation emission can be achieved. In addition, we found that highexcitation enables high quantum efficiency, without trade-off of single photon purity, underfunctionalization. Altogether, our simulation pointed out that approximately 100 nm long
functionalized SWCNT under high excitation conditions will emit single photon with purityof 99.87% with efficiency of 99.84%. We expect this ideal SPS to enable high rate and longdistance quantum key distributions at room temperature.
This work was partially financially supported by PRESTO and A-STEP from JST and
KAKENHI, KISTEC project, Spintronics Research Network of Japan, the Core-to-Core
program from JSPS, and NIMS Nanofabrication Platform in Nanotechnology Platform Project
by MEXT.

Fig. 1 Simulation results for a single pristine or functionalized SWCNT.
[1] T. Endo, J. I-Hayase, and H. Maki, Appl. Phys. Lett. 106, 113106 (2015).
[2] R. Kawabe, H. Takaki, T. Ibi, Y. Maeda, K. Nakagawa, and H. Maki, Appl. Nano Mater. 3, 1, 682 (2020).
Corresponding Author: H. Maki
Tel: +81-045-566-1643, Fax: +81-145-566-1587,
E-mail: maki@appi.keio.ac.jp- 77 -

1P-34,QVLWX;$)6DQDO\VLVRIJURZWKPHFKDQLVPRIVLQJOHZDOOHGFDUERQQDQRWXEHVIURP&RFDWDO\VW
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Their electronic states are closely related to the diameter and chirality, therefore, structural control has been
an important issue, and it is important to understand the growth mechanism of SWCNTs. However, there arestill many unclear points regarding the formation process of SWCNTs from catalyst particles. So far, in situ
TEM analyses have been performed to investigate the physical and chemical states of catalyst particles during
SWCNT growth [1], but, compared with the conventional growth conditions, they were performed under low
pressures and low temperatures. In this study, we performed in situ X-ray absorption fine structure (XAFS)
measurement and investigated the chemical state of the Co catalyst during SWCNT growth by conventional
CVD.
([SHULPHQWDO3URFHGXUH
BN powder and cobalt acetate tetrahydrate were mixed and calcined, and then pellet-molded toprepare a sample for XAFS measurement. Using this sample, we measured Co K edge XAFS spectra during
SWCNT growth by alcohol catalytic CVD. The growth temperature and growth time were 800|C and 10
min, respectively. We also investigated the effect of addition of oxygen gas during the increase of sample
temperature. The in situ XAFS analysis was performed Aichi SR BL5S1 and BL11S2. The grown samples
were characterized by Raman, TEM and SEM.

- 78 -

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Fig. 1(a) and 1(b) shows Co K-edge XAFS
DEspectra of the samples during the temperature increase
under Ar/H2 and Ar/O2 flows, respectively, and Fig. 1(c)and (d) shows Raman spectra of the samples after the
XAFS measurements. When oxygen gas was introduced,
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the absorption edge intensity became stronger, and the(QHUJ\>H9@(QHUJ\>H9@
reduction of Co particles was suppressed. Raman spectraFG
showed that SWCNT yield was higher and the SWCNT
diameter was smaller for the sample heated under Ar/O2
flow. These results indicate that partially oxidized Co
catalysts are suitable to enhance the SWCNT yield.
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This work was partly supported by the Meijo University
Fig.1 In situ XAFS spectra during heating to the growth
Research Branding Project for Cultivation and Invention
temperature under (a) Ar/H2 and (b) Ar/O2 carrier gases,of New Nanomaterials under the MEXT Private
respectively
University Research Branding Project. Part of this work
was supported by JSPS KAKENHI Grant Number
JP19H02563 and the Nanotechnology Platform of MEXT. We thank Prof. Hihara at Nagoya Institute ofTechnology for performing TEM observation.
5HIHUHQFHV>@H. Yoshida et al. Nano Lett. 8 (2008) 2082.
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1P-35Comparison of anisotropic thermal conductivities in bundles of SWCNTs
at different temperature regions○Hiromu Hamasaki1, Takumi Kawase1 and Kaori Hirahara2
Dept. of Mechanical Engineering, Osaka University, Osaka 565-0871, Japan
2
Dept. of Mechanical Engineering and Center for Atomic and Molecular Technologies,
Osaka University, Osaka 565-0871, Japan1

For the investigation of the anisotropic thermal conductivity between intra and internanotubes, we have focused on the bundles of single-walled carbon nanotubes (SWCNTs) andvisualized thermal transport on it by monitoring the evaporation of gold nanoparticles astemperature markers [1]. In order to expand the observable temperature range, the visualization
by utilizing solid-liquid phase transition was suggested, instead of the evaporation [2]. Here,we compared the anisotropic thermal conductivities at two different temperature regions bymonitoring two types of phase transition of Sn nanoparticles: the phase transition from solid toliquid and liquid to gas.
Figures 1(a) and (c) show transmission electron microscope (TEM) bright and dark field
images of the initial state of the bundle, respectively. Fig. 1(b) and (d) show bright and dark
field TEM images when particle-A evaporates and melts, respectively. The positions of theevaporated particles whose diameter is 22~25 nm in Fig. 1(b) are indicated as red dots.
Corresponding particles in Fig. 1(d) are indicated by red or yellow arrows when the particles
are melting or not, respectively. The experimental results indicate that the temperature contours
on SWCNTs bundle spread wider along inter-tube direction at higher temperature. The results
will be discussed based on the temperature dependence of thermal conductivity along intra andinter nanotube direction.
This work was supported by JST CREST Grant Number JPMJCR17I5, Japan.

Figure 1 TEM images of a SWCNT bundle decorated by Sn nanoparticles in (a) bright field mode at initialstate, (b) bright field mode when particle-A evaporates, (c) dark field mode at initial state and (d) dark fieldmode when paricle-A melts.
[1] H. Hamasaki et al. Nano Lett., 2021, 21, 3134-3138.
[2] H. Hamasaki et al. the 60th FNTG General Symposium, Mar. 1-3, 2021, online virtual symposium.
Corresponding Author: H. Hamasaki
Tel: +81-6-6879-7307, E-mail: hamasaki@ne.mech.eng.osaka-u.ac.jp- 79 -

1P-36
Designing of self-assembled peptides as a molecular scaffold
for graphene biosensor○Shun Shimizu1, Chishu Honma1, Yoshiaki Sugizaki 2,
Hideyuki Tomizawa , Yuhei Hayamizu1
1

Department of Materials Science and Engineering, School of Materials and Chemical Technology,
Tokyo Institute of Technology, 2-12-1 Ookayama, meguroku, Tokyo, Japan
2
Corporate Research & Development Center, Toshiba Corporation,1, Komukai-Toshiba-cho,
Saiwai-ku, Kawasaki, Japan

Graphene biosensors require to immobilize probe molecules on their surface to achieve a
specific binding to target molecules. Pyrene has been widely utilized to immobilize bio-probes
on graphene surfaces using their S-S interaction. However, the chemical synthesis of pyreneconjugated probe molecules may hinder the easy production of a variety of bio-probes. For thissake, self-assembled peptides can be a promising molecular scaffold for immobilizing probe
molecules [1]. Recently, our group reported that fibroin-like peptides, which were made bymimicking a silk protein with a stable E-sheet structure, formed a uniform monomolecular thickstructure on graphene surface [2]. These peptides have tyrosins at the both ends of the aminoacid sequence as binding sites for graphene surface (YGAGAGAY). In this work, we design a
new type of peptides which have the binding site at the side of C-terminal (AGAGAGSYSY)
and compare it with the previous peptides in terms of their ability as biomolecular scaffold forbiosensing. We expect that the new peptide may have more stability and activity of bio-probes
due to their orientation aligned vertically to the graphene surface.
We synthesized two peptides: AGAGAGSYSY and its biotinylated one. The biotin
conjugated peptide was used as a bio-probes with peptides to demonstrate the biosensing ability.
Aqueous solution of mixture of these peptides was incubated on graphene field effect transistors(GFETs) and was rinsed it by phosphate buffer. Then, electrical measurement of GFETs was
performed to detect the binding event of streptavidin at various concentrations. The current
between source and drain electrodes was monitored over time during the experiment. As shownin Figure 1, the current decreased as increasing
the concentration of streptavidin placed on the
GFET. The response fitted well with Langmuiradsorption isotherm and the obtained binding
affinity was 40 pM, indicating that the binding
event between biotin and streptavidin was
successfully monitored by GFET electrically.
This work was supported by the Cabinet Office(CAO), Cross ministerial Strategic Inno-vation
Promotion Program (SIP), “Intelligent Processing
Infrastructure of Cyber and Physical Systems”(funding agency: NEDO).
Fig. 1 Current change of GFETs functionalized
by peptides over time. 6 FETs were used todetermine the error bar (light blue region). The
concentration of streptavidin was increased
sequentially at every 6 mins and the GFET wasrinsed by phosphate buffer after all.

[1] Y. Hayamizu, et al., Scientific reports, 2016, 6.1[2] P. Li, et al., ACS app. mat. & int., 2019, 11.23
Corresponding Author: Y. Hayamizu
Tel: +81-3-5734-3651, Fax: +81-3-5734-2876,
E-mail: shimizu.s.ba@m.titech.ac.jp- 80 -

1P-37

Kelvin probe force microscopy study of
MoS2/MoSe2 in-plane heterostructures○Kazuki Hashimoto, Hong En Lim, Yusuke Nakanishi, Takahiko Endo, Yasumitsu Miyata
Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
In-plane heterostructures based on transition metal dichalcogenides (TMDCs) have attracted
much attention because of their physical properties and future device applications. Recent
studies have achieved the continuous epitaxial growth of different TMDC monolayers, resulting
in the formation of monolayer nanoribbons and their superlattices with engineered strain [1,2,3].
So far, the local density of states of heterointerface have been mainly studied by scanningtunneling microscopy/spectroscopy [2,3]. However, a facile and quick method is highly desired
to characterize the structure and electrical properties of these in-plane heterostructures. In thisstudy, we have studied TMDC-based in-plane heterostructures using Kelvin probe force
microscopy (KPFM).
In-plane heterostructure on MoS2/MoSe2 was grown using metal organic chemical vapor
deposition (MOCVD) system. Topographic and KPFM measurements are acquired
simultaneously using Park System NX10 AFM in a non-contact scanning mode. Fig. 1b and cshows topographic and work function images of monolayer MoS2/MoSe2/MoS2/MoSe2/MoS2
in-plane heterostructure. The topographic image indicates that the heterostructure has athickness of 1 nm within the grain. In contrast, a clear contrast can be seen in the work function
image between MoS2 and MoSe2 (Fig. 1d). In the poster, we will discuss the details of therelationships between local structure and work functions.

Fig.1 (a) Structure model, (b) topographic and (c) KPFM images of an MoS2/MoSe2/MoS2/MoSe2/MoS2 in-plane
heterostructure. (d) Height and work function profiles extracted from the white lines marked in b and c.
[1] S. Xie et al. Science, 359, 1131-1136 (2018).
[2] Y. Kobayashi et al. ACS Nano, 13, 7527-7535 (2019)[3] C. Herbig et al. Nano Lett, 21, 2363-2369 (2021)
Corresponding Author: Y. Miyata
Tel: +81-42-677-2508, Fax: +81-42-677-2483, E-mail : ymiyata@tmu.ac.jp- 81 -

1P-38
Electrolyte-based transition metal dichalcogenide light-emitting devices
with microcavity○Soma Suzuki1, Tomohiro Ogura1, Takahiko Endo2, Yasumitsu Miyata2, Kenichi Yamashita3,
Jiang Pu1, Taishi Takenobu1
1

Department of Applied Physics, Nagoya University, Nagoya 464-8601, Japan
Department of Physics, Tokyo Metropolitan University, Tokyo 192-0397, Japan
3
Faculty of Electrical Engineering and Electronics, Kyoto Inst. of Tech., Kyoto 606-8585, Japan
2

Transition metal dichalcogenaides (TMDCs) forms stable exciton at room temperature due
to its tightly quantum confinement effect, and can provide interesting optoelectronic device
functionality combined with microcavity. Specifically, a new quantum bonded state called
exiton-polariton, which is strong coupling state of exciton and cavity photon, has been observedat room temperature in TMDCs; so that the ultra-low threshold polariton laser can be expected
for future applications [1]. However, previous researches on exciton-polariton of TMDCs havebeen mostly limited to potoluminescence (PL) measurements [2], and, therefore, the realizationof electroluminescence (EL) from microcavity-integrated light-emitting device is remaining
challenge toward future device applications, which is hindered by the complicated structures of
relevant TMDCs light-emitting devices that are difficult to assemble with microcavities [3].
Here, we proposed a monolayer TMDCs light-emitting device that combines microcavity withsimple electrolyte-based light-emitting device structure [4]. We utilize a mixture of insulating
polymer and ionic liquid as electrolyte, and it also serves as medium of Fabry-Perot opticalcavity using distributed Bragg reflector (DBR). Using this device, we evaluate the cavity modeand exciton-polariton for both PL and EL measurements.
The chemically grown TMDCs monolayer flakes were firstly transferred onto a DBR, andthen two gold electrodes were patterned on the surface of TMDCs. Finally, Poly Methyl
Methacrylate (PMMA) mixed with an ionic liquid were spin-coated followed by deposition ofthin metal film on the PMMA surfaces as a top
mirror (Fig. 1). We confirmed that the
fabricated device work as a microcavity fromthe angle-resolved PL spectra, which indicatesthe cavity mode and exciton-polariton. In
addition, when we applied voltages between
two electrodes, the ion distributions induce p-in junction inside TMDCs to generate EL.
Figure 2 shows optical image of the device and
EL image of a WS2 device, and we clearly Fig. 1 Electrolyte-based cavity-integrated device
observed EL from cavity-integrated device. We
will discuss the analysis of the PL and EL
characterizations of cavity and excitonpolaritons in these devices.
[1] H. Deng et al., PNAS, 100, 15318 (2003).
[2] N. Lundt et al., Nat. Commun. 7. 13328 (2016).
[3] F. Withers et al., Nat. Mater., 14, 301 (2015).
[4] J. Pu et al., Adv. Mater. 29, 1606918 (2017).

Fig. 2 Optical (left) and EL (right) images

Corresponding Author: T. Takenobu, Tel/Fax: 052-789-5165, E-mail: takenobu@nagoya-u.jp- 82 -

1P-39Stacking angle-dependent intercalation in bilayer graphene○Yuji Araki1, Pablo Solís-Fernández2,Kenji Kawahara2, and Hiroki Ago1,2,*
1Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Fukuoka 816-8580, Japan
2

Global Innovation Center (GIC), Kyushu University, Fukuoka, 816-8580, Japan

Bilayer graphene (BLG) has unique 2D nanospace which can be utilized to intercalate
molecules and ions to alter the electronic properties while maintaining high optical transparency.
The intercalation of MoCl5 molecules significantly reduced the sheet resistance of BLG, andeven superconductivity was observed for Ca-intercalated BLG [1,2]. By using large-area
BLG grown on a Cu-Ni(111) alloy film, we demonstrated that twisted BLG is more facile tothe intercalation as compared with AB-stacked BLG. However, it was not clear how thestacking angle influences the intercalation, because the CVD-grown BLG has various stacking
angles [1]. In this work, we fabricated artificially stacked BLG grains with controlled stacking
angles and studied the influence of the stacking angle on metal chloride intercalation.
First, large hexagonal graphene grains grown on Cu(111)/sapphire [3] were transferred onanother graphene batch on Cu(111)/sapphire while controlling the stacking angle during thetransfer process. Then, we transferred this artificially stacked BLG on a SiO2 substrate. The
hexagonal shape of the SLG grains allowed us to define the stacking angle by optical
microscope. We sealed this artificial BLG and a mixture of AlCl3 and CuCl2 in a glass tube,
followed by heating for the intercalation. The ratio of the intercalation was calculated based on
the Raman G-band shift [1]. As shown in Figure 1, we discovered a clear correlation between
the stacking angle and the intercalation, with intercalation being more efficient for lager
stacking angles. In this graph, we also show the full width at half maximum (FWHM) of 2Dband of the pristine BLG. The FWHM2D is sensitive to the interlayer coupling in BLG, withlarge FWHM corresponding to stronger
ger
coupling. Therefore, Figure 1 indicates that theeinterlayer coupling is essential for proceedinggthe intercalation. Our result deepens theeunderstanding of the intercalation mechanismm
as well as helping the design of BLG for highhratio of the intercalation, which can be usefull
for many applications, such as ultralow sheett
resistance electrodes and batteries withhextraordinarily high capacity.
References: [1] H. Kinoshita et al., Adv. Mater., 29,
1702141 (2017). [2] S. Ichinokura et al., ACS Nano,
10, 2761 (2016). [3] H. Ago et al., Appl. Phys.
Express, 6, 75101 (2013).

Figure 1.
1 Relationship between the stacking
angle and intercalation in BLG. The FWHM of
2D band of the pristine BLG is also plotted.

- 83 -

1P-40Organic solar cells with semiconducting carbon nanotubes in the holetransport layer○Daisuke Miyata1, Hao-sheng Lin1, Soma Ishikawa 1, Takeshi Hashimoto2, Satoru
Hashimoto2 Yutaka Matsuo1
1

Department of Chemical System Engineering, Nagoya University, Furo-chou, Chikusa-ku, Nagoya
2464-8603, Japan
Meijo Nano Carbon, Nagoya 463-0003, Japan

1. Organic solar cells attention because of their flexibility and the possibility of mass production
at lower cost. On the other hand, the conversion efficiency of organic solar cells is lower thanthat of inorganic cells, which is a major issue that needs to be improved. And to improve power
generation efficiency, it is essential to improve the performance of the hole transport layer.
Table 1. Photovoltaic parameters of OSCss-CNT(wt%) 0wt%
JSC(mA/cm2) 6.51

5wt%

10wt%

15wt%

100wt%

6.26

6.39

6.13

1.97

VOC(V)

0.593

0.603

0.594

0.602

0.386

0.585

0.601

0.609

0.607

0.388

99.1

95.3

75.0

97.5

775.3

9983

11190

9923

11703

5597

2.26

2.29

2.31

2.24

0.29

FF
Rs(Ω)
Rsh(Ω)
η(%)

Current density(mA/cm2)

2.Therefore, in our research, we tried to improve the performance by semiconducting carbon
nanotubes to PEDOT:PSS [poly(3,4-ethylenedioxythiophene) poly(styrene sulfonate)], which
is mainly used as a hole transport layer.
3. In the experiment, the ratio of s-CNTs (made by Meijo NanoCarbon) aqueous solution to
PEDOT:PSS was varied, and the J-V curve, SEM image of the device cross-section, AFM
image of the hole transport layer, and Raman spectrum of thehole transport layer surface were measured. mix5
PCBM:P3HT (0.95 :1) for the active layer, Ca for theelectron transport layer, and Al for the electrode.
0
4. As shown in the results, the PCE of the reference device
references-CNT5wt% doped
was 2.26%, that of the device with 5 wt% s-CNT was-5s-CNT10wt% doped
2.29%, and that of the device with 10 wt% s-CNT was
s-CNT15wt% doped-10
s-CNT100wt%
2.31%. The addition of s-CNT decreased the series
resistance and slightly increased the PCE efficiency.
0

Corresponding Author: Y. Matsuo

Tel: +81-52-747-6722
E-mail:yutaka.matsuo@chem.material.nagoya-u.ac.jp- 84 -

0.2

0.4

Voltage(V)0.6

Figure1 1 J-V curve of s-CNT doped OSC

1P-41
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,$ 2#./1/!&++#))#+%0&"'.#!0"#-,/'0',+*#0&,"/,..#/-,+"'+%10&,.10(&+,&,+#   *')
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'%
+!1..#+00+",$ +",+
'% '*%#/$')0.0',++"0.+/$#. ,$$.0',,$ 2#./1/!&++#))#+%0&"'.#!0"#-,/'0',+*#0&,"/
,..#/-,+"'+%10&,.10(&+,&,+#   *')      - 85 - 85 -1P-42Fabrication of SWCNT-BNNT field-effect transistors and evaluation ofcontact resistanceTaiki Sugihara1, Satoru Matsushita1, Shu Sato1, Keigo Otsuka1, Taiki Inoue2, Shohei Chiashi1,
Shigeo Maruyama1
1

Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan2
Department of Applied Physics, Osaka University, Osaka 565-0871, Japan

Single-walled carbon nanotube field-effect transistors (SWCNT-FETs) satisfy the demands
for miniaturization of FETs. SWCNT-FETs are easily affected by external environments, whichcauses hysteresis and deterioration of subthreshold swing (SS). High-κ materials[1], forexample, can minimize SS values by increasing the gate capacitance, but there remains thetrade-off between increased gate leakage and small SS at a reduced insulator thickness. Coaxial
wrapping of SWCNTs with boron nitride nanotubes (BNNTs), which has been recently
achieved[2], could eliminate interface traps and lead to the simultaneous suppression of theleakage and SS. In this research, we fabricate FETs with single SWCNT-BNNTs as a channel
and measure their performance to evaluate the potential of such heterostructures in nextgeneration electronics.
Air-suspended SWCNT-BNNTs are synthesized on pillar substrates and their synthesis isconfirmed by Raman spectroscopy and scanning-electron microscopy. We transfer the SWCNTBNNTs from the pillar substrates to flat SiO2 substrates using a polymer stamp. A back-gate
FETs are fabricated by depositing Au on SWCNT-BNNTs by electron beam lithography andvacuum evaporation. We investigate the transport properties of these FETs. Although SWCNT
FETs usually show p-type properties, some of the FETs with SWCNT-BNNT channels exhibit
near-bipolar properties (Fig. 1(a)). We also find that the on-state drain current of each FET
varies over several orders of magnitude. By assuming the tunnel resistance of two-dimensional
BN flakes with well-defined layer numbers[3], a simple series circuit model yields rather
discrete values for the estimated number of BN layers (Fig. 1(b)). Since the BN layer-derived
contact resistance is unfavorable in electronic devices, we apply a high bias voltage between
the source and drain to selectively induce dielectric breakdown of the BN layers under the metal
contact. Figure 1 (c) shows the VG-ID characteristics before and after the breakdown, confirming
the increased on-current without degrading other characteristics.

10

−8

10

−6

10

VD = -1 V

−10

(c)
4

−ID (A)

10

−6

(b)

Counts−ID (A)(a) 10−4

2

VD = -1 V

−7

10

−8

10
−12

10 −100
VG (V)

10

0

0

1

2

3

4

5

Estimated BN layer number−100
VG (V)

10

Fig. 1 (a) Typical VG-ID characteristic of SWCNT-BNNT FETs. (b) Histogram of estimated BN layer
number. (c) VG-ID before (black) and after (red) dielectric breakdown of the BN layer.
[1] C. Zhao et al., Appl. Phys. Lett. 112, 053102 (2018). [2] R. Xiang et al., Science 367, 537 (2020).
[3] L. Britnell et al., Nano Lett. 12, 1707 (2012).
Corresponding Author: Shigeo Maruyama, Tel: +81-3-5841-6421, Fax: +81-3-5800-6983,
E-mail: maruyama@photon.t.u-tokyo.ac.jp- 86 -

1P-43Modulating selectivity of 1,3-dipolar cycloaddition by carbon nanotube
confinements: A dispersion-corrected density functional theory study○Shuta Fukuura1, Takashi Yumura1
1

Innovative Materials, Kyoto Institute of Technology, Kyoto 606-8585, Japan

When molecules inside a carbon nanotube react with each other, the chemical reactions
would be influenced by tube confinements. For example, Miners et al [1] have experimentallydemonstrated that selectivity of 1,3-dipolar cycloaddition reactions inside nanotubes changes
depending on the tube diameters. However, how the tube confinement modulates the selectivity
has not been elucidated, and thus further computational investigation is required. For thispurpose, the current computational study aims to investigate the potential energy surface (PES)of 1,3-dipolar cycloaddition with and without nanotube surroundings. Following ref. [1], wetraced 1,3-dipolar cycloaddition between phenylacetylene and phenyl azide (entry 1) or
phenylacetylene and benzyl azide (entry 2) inside armchair (m,m) nanotubes (8 ≤ m ≤ 10) by
obtaining local minima and transition states (TSs) using QM/MM ONIOM methods where
dispersion-corrected B97D DFT calculations were used as QM, followed by single-point B97D
calculations to evaluate the energy for the optimized geometries. In entry 1 or 2, two NѸC bonds
are formed between acetylene and azide moieties to yield 1,4- or 1,5-triazole products along
1,4- or 1,5-approach reaction.
DFT calculations found that the degrees of nanotube-confinement-effects in modulating
selectivity of the reaction vary between entries 1 and 2. Nanotube confinements have a strong
impact on PESs in entry 1 to enhance selectivity of forming the 1,4-triazole product rather than
the 1,5-triazole product. In particular, more significant confinement effects to change PES canbe found in smaller-diameter tubes, because the 1,4-triazole product is substantially stabilized
rather than the 1,5-triazole product, as well as the activation energy to form the 1,5-triazole
product is increased. These changes are understood, because two phenyl rings ofphenylacetylene and phenyl azide shortly overlap in the TS and product in the 1,5-approach tooperate repulsive S−S interactions. On the other hand, PESs in entry 2 with the nanotube
environment have remained almost unchanged from those in the gas phase. These differences
between entries 1 and 2 come from the presence of a methylene group between phenyl andacetylene moieties.

Fig. 1 Optimized structures of transition states in entry 1 inside (a) (10,10) and (b) (8,8) tubes. The energy
values are activation energy relative to the reactant complex.
[1] S. A. Miners et al. J. Phys. Chem. C, 123, 6294 (2019).
Corresponding Author: S. Fukuura
E-mail: m0671021@edu.kit.ac.jp- 87 -

1P-44Growth of high-density CNT forest by a self-assembled monolayer of iron oxide
nanoparticles
˕Yuga Kono, Kento Tabata, Takayuki Nakano, Yoku Inoue

Department of Electronics and Materials Science, Shizuoka Univ., Hamamatsu 432-8561, Japan

In the synthesis of carbon nanotube (CNTs) forest, a thin Fe film is generally formed on asubstrate for catalyst by sputtering or electron beam deposition. When a thin film of Fe is melted at ahigh temperature to form nanoparticles, the thickness of the film uniquely determines the size anddensity of the particles. Therefore, the particles are located at a certain distance, and the maximum
density is lower than the closest packing. On the other hand, densely spreading spherical nanoparticles
on a substrate allows for hexagonal closest packing. Therefore, if the nanoparticles are formed densely
on the substrate, CNTs can be synthesized at a higher density. In the past CNT synthesis using
colloidal iron oxide nanoparticles, the CNT forest was not densely packed due to problems such as
the inability to uniformly load the particles on the substrate and aggregation when many particles areloaded. In this study, the catalytic particles were anchored to the substrate with self-assembled
monolayer (SAM) molecules to increase the loading density of nanoparticles and improve the massdensity of the CNT forest.
The catalyst nanoparticles were synthesized using the polyol method. The particle size wascontrolled by the amount of Fe precursor and the nucleation temperature. The average diameters of
the iron oxide nanoparticles prepared were 2.3 nm, 4.8 nm, 7.2 nm, and 11.4 nm. An Al2O3 layer was
deposited by sputtering on a thermally oxidized Si substrate. Next, the carboxylic acid polymer was
dissolved in ethanol with a concentration of 2 mM. The solution was heated to 50 °C, and the substrate
was immersed for 24 hours. After that, iron oxide nanoparticles were spin-coated and annealed in air
at 375 °C for 1 h. The synthesis of CNTs was carried out by chemical vapor deposition method using
C2H2 as carbon source, H2 as reducing agent for catalyst particles, and Ar as carrier gas.
Figure 1 is a scanning electron microscopy (SEM) image of a CNT forest. The highmagnification image shows that the CNTs are very dense. Figure 2 shows the relationship between
the mass density and length of CNTs. It also plots the mass density vs. length data of high-density
CNT forests reported so far. It is found that the density tends to decrease with increasing length. Thisis due to the deactivation of the catalyst as the synthesis time progresses. In this study, by forming
SAMs and fixing iron oxide nanoparticles, very dense forests of up to 211 μm and 101 μg/cm3 wereobtained. This density is very high, as high as the upper limit of the density of CNT forests reported
so far.


Fig.1 SEM image of CNT forest. Inset shows
the magnifierd image.

Corresponding Author: Yoku Inoue
Tel: +81-53-478-1356
E-mail: inoue.yoku@shizuoka.ac.jp
Web: https://cnt.eng.shizuoka.ac.jp/

Fig.2 The relationship between mass density and length of our
CNT forests are plotted in conparison to the reported highdensity CNT forests [1-4].
[1] A. Kawabata, et. al, Appl. Phys. 54, 045101(2015)[2] Nicholas T, Dee, et al., Carbon 153, 196-205 (2019)[3] H. Inoue, et al., Carbon 158, 662-671 (2020)[4] H.Nishino, et al., J. Phys. Chem.111, 17961-17965 (2007)- 88 -

1P-45Chemical vapor deposition growth of carbon layers on boron nitride
nanotubes○Taiki Inoue1, Masakiyo Kato1, Yungkai Chou1, Yoshihiro Kobayashi1
1Department of Applied Physics, Osaka University, Osaka 565-0871, JapanThe recent realization of coaxial heteronanotubes consisting of different atomic layers offers
novel opportunities to integrate functions into one multi-walled nanotube by controlling nestingorder [1,2]. Among candidate nanotubes which can be incorporated into heteronanotubes,
carbon nanotubes (CNTs) are known as semiconducting or metallic depending on their chirality,
whereas boron nitride nanotubes (BNNTs) are an insulator with a wide bandgap. Although
BNNT growth on CNTs was achieve in the previous study [1], CNT growth on BNNTs has notbeen realized so far, which hinders the formation of complex heteronanotubes with arbitrary
nesting order. In this study, we performed carbon layer growth on a BNNT template by chemical
vapor deposition toward obtaining coaxial heteronanotubes composed of inner BNNTs andouter CNTs. Commercial few-walled BNNT powders were dispersed in solvent and formed
into thin films by vacuum filtration. The BNNT films were loaded in an infrared radiation
furnace and used as a template for carbon layer growth. Growth temperature ranged 11501350
qC. Ethanol and Ar were used as a carbon source and carrier gas, respectively. The growth
conditions were determined by referring to a previous study of overlayer graphene growth on agraphene template [3]. The obtained samples were characterized by Raman spectroscopy, UVvis-NIR absorption spectroscopy, X-ray photoelectron spectroscopy, and transmission electron
microscopy (TEM). The appearance of G-band and D-band in Raman spectra indicates theformation of carbon layers on BNNTs. TEM observation confirmed the preservation of the fewwalled structure. Absorption spectra shows an increase of absorbance in a wide wavelength
range and a decrease of a BNNT-derived absorption peak around 200 nm after carbon layer
growth. This implies the possibility of partial substitution of boron nitride networks with carbon
atoms [4], which should be suppressed in a future study.
[1] R. Xiang et al. Science, 367, 537 (2020).
[2] Y. Feng et al., ACS Nano 15, 5600 (2021).
[3] R. Negishi et al., Phys. Status Solidi B. 257, 1900437 (2019).
[4] L. Ci et al., Nat. Mater. 9 ,430 (2010).
Corresponding Author: T. Inoue
Tel: +81-6-6879-4684,
E-mail: inoue.taiki@ap.eng.osaka-u.ac.jp- 89 -

1P-46
Double-walled carbon nanotube transparent conductor overcoming
performance–yield tradeoff○ Jeong-Seok Nam1, Qiang Zhang2, Jiye Han1, Sukanta Datta2, Nan Wei2, Er-Xiong Ding2,
Aqeel Hussain2, Saeed Ahmad2, Taher Khan2, Yong-Ping Liao2, Tavakkoli Mohammad2, Bo
Peng2, Shigeo Maruyama3, Hua Jiang2, Il Jeon1, Esko I. Kauppinen2
1

Department of of Chemical Materials, Pusan national University, Busan 46241, Republic of Korea
Department of Applied Physics, Aalto University School of Science, FI-00076 Aalto, Finland.
3
Department of Mechanical Engineering, School of Engineering, The University of Tokyo, Tokyo 1138656, Japan2

The floating catalyst chemical vapor deposition (FCCVD) method for producing single-wallcarbon nanotubes (SWNTs) has demonstrated great potential in transparent conductive film(TCF) application. In FCCVD, reducing the number of carbon nanotubes (CNTs) is the mostwell-known method of improving the conductivity of SWNT TCF, achieved by producing
thinner and longer CNT bundles.[1] However, this CNT reduction dramatically reduces theyield by orders of magnitude. Here, we report a new FCCVD method of producing highly
transparent and conductive TCFs that overcomes the performance-yield tradeoff. In our
ferrocene-sulfur-methane system, large-diameter double-walled CNT (DWNT) TCFs were
produced with a DC-to-optical conductivity ratio that is on par with the high-performing SWNTTCFs. The optimal FeCp2 evaporation temperature was determined to be 35°C, which produced
DWNT TCFs that exhibited 35 Ω/sq at 90% transmittance and a specific yield of ca. 2.6*10-3
m2/(h*slm). The device application of DWNT TCFs is tested in perovskite solar cells, which
exhibit a power conversion efficiency of 17.4%.
[1] Q. Zhang et al. Top. Curr. Chem, 99-128 (2017)
Corresponding Author: I. Jeon
E-mail: il.jeon@spc.oxon.org- 90 -

1P-47
Molecular Dynamics Simulation of Single-Walled Carbon Nanotube
Growth from Metal Carbide Nanoparticles○Ikuma Kohata1, Ryo Yoshikawa1, Kaoru Hisama2, Keigo Ostuka1, Shohei Chiashi1 andShigeo Maruyama1
1

Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan2
Department of Physics, University of Tsukuba, Tsukuba 305-8571, JapanTo achieve the chirality-specific growth of single-walled carbon nanotubes (SWCNTs), it
is essential to understand its atomistic growth mechanism. Although it is well-known thatcatalyst metal nanoparticles play important roles in the growth process, it is still unclear whatstate and structure of the nanoparticles are optimal for SWCNT growth and how they affect thechirality distribution. Molecular dynamics (MD) simulations are a powerful tool to observe the
SWCNT growth from metal nanoparticles, as we have observed the “Octopus growth” and thechirality definable growth [1] by using our original force field [2]. In this study, we employedlarger Co catalysts Co80-Co120 compared with our previous simulations, Co60 [1,2]. Surprisingly,
we observed the formation of two kinds of Co2C carbide structures and the growth of SWCNTs.
Our findings are consistent with recent experimental results with an environmental TEM
observation that shows the nucleation of SWCNTs from metal nanoparticles in Co2C carbide
form [3]. We will discuss if the chirality of SWCNT is predefined by the facet geometry ofcarbide structure.㻌
Figure 1 (a) shows a (11,8) SWCNT growing from Co100 catalyst. The structure of thecatalyst shows the cubic carbide lattice shown in Fig. 1(c). In contrast, a (14,5) SWCNT grows
from the Co100 catalyst that has a different catalyst carbide structure with a hexagonal lattice[Fig. 1(b,d)]. The growth from cubic carbide nanoparticles is significantly slower because thecarbon chains on the cubic structure entangle each other as shown in Fig. 1(a), resulting in lessmobile carbon atoms on the catalyst. On the other hand, the growth from hexagonal
nanoparticles is much faster because the straight carbon chains are formed on the catalyst,
which can be smoothly converted into SWCNT.㻌
㻌[1] R. Yoshikawa et al., ACS Nano, 13, 6506 (2019).
[2] K. Hisama et al., J. Phys. Chem. C, 122, 9648 (2018).
[3] M. Picher et al., Nano Lett., 14, 6104 (2014).

Fig. 1 (a) (11,8) SWCNT growth from hexagonal carbide (b) (14,5) SWCNT growth from cubic carbide(c) Cubic Co2C structure and (d) Hexagonal Co2C structure
Corresponding Author: S. Maruyama E-mail: maruyama@photon.t.u-tokyo.ac.jp- 91 -

1P-48Synthesis of g-C3N4-[C60] fullerene nanowhisker composites and theirphotocatalytic activity for degradation of rhodamine B○Jeong Won Ko1, Se Hwan Park2, Sugyeong Jeon2,GWeon Bae Ko2,3,4
1

Department of Animal Life Resources, Chemistry Major, 2 Department of Convergence Science,
Graduate School, 3 Nanomaterials Research Institute, 4 Department of Chemistry, Sahmyook
University, 815, Hwarang-ro, Nowon-gu, Seoul 01795, Republic of Korea

Graphitic carbon nitride (g-C3N4) was prepared from melamine (C3H6N6) dissolved into
distilled water, and the resulting solution was refluxed for 1 h. The precipitate was collected bycentrifugation and then dried at 80 °C for 12 h, followed by annealed under an electric furnace
at 550 °C for 3 h to obtain solid state g-C3N4 [1]. The g-C3N4 solution was prepared bydissolving powdered g-C3N4 in an aqueous solution with polyvinyl pyrrolidone (PVP). The gC3N4–[C60] fullerene nanowhisker composites were synthesized by the liquid–liquid interfacial
precipitation (LLIP) method using the g-C3N4 solution, C60-saturated toluene, and isopropyl
alcohol [2]. The product of the g-C3N4–[C60] fullerene nanowhisker composites werecharacterized by X-ray diffraction, scanning electron microscopy, Raman spectroscopy, andtransmission electron microscopy. The photocatalytic activity of the g-C3N4–[C60] fullerene
nanowhisker composites assessed through degradation of rhodamine B (RhB) was confirmed
by UV–vis spectroscopy.
0.0ln(C/C0)

-0.5

-1.0

-1.5

Intercept
Slope
R-Square (COD)

-2.0

0

10

20

30

0.04693 ± 0.03797-0.01944 ± 5.84755E-4
0.99103
40

50

60

70

80

90

100

110

Time (min)Fig.1 Kinetics study for RhB degradation with g-C3N4–[C60] fullerene nanowhisker composites under UV
irradiation at 254 nm.
[1] J. Wang, C. Liu, S. Yang, X. Lin, W. Shi, Journal of Physics and Chemistry of Solids, 123, 109164 (2020).
[2] K. Miyazawa, Journal of Nanoscience and Nanotechnology, 9, 41 (2009).
Corresponding Author: W. B. Ko
Tel: +82-2-3399-1700, Fax:, +82-2-979-5318,
E-mail: kowb@syu.ac.kr- 92 -

1P-49Synthesis and Characterization of Li-Encapsulated PCBM (Li@PCBM):
the First Li@C60 Derivative○Hiroshi Ueno1,2, Daiki Kitabatake2, Hao-Sheng Lin3,4, Yue Ma5, Il Jeon6,
Fuminori Misaizu2,7, Shigeo Maruyama4, Yutaka Matsuo3,4,5
1

Creative Interdisciplinary Research Division, Frontier Research Institute for Interdisciplinary
Sciences (FRIS), Tohoku University, Sendai 980-8578, Japan2
Department of Chemistry, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan3
Department of Chemical System Engineering, Graduate School of Engineering, Nagoya University
4
Department of Mechanical Engineering, School of Engineering, The University of Tokyo
5
Hefei National Laboratory for Physical Science at the Microscale, University of Science andTechnology of China
6
Department of Chemistry Education, Graduate School of Chemical Materials, Institute for Plastic
Information and Energy Materials, Sustainable Utilization of Photovoltaic Energy Research Center(ERC) Pusan National University
7
New Industry Creation Hatchery Center, Tohoku University

Lithium-encapsulated [60]fullerene (Li@C60) has attracted growing interest owing to its
predicted electronic properties arising from the superatomic electronic structure originated inelectron transfer from the encapsulated metal to the external carbon cage. Previously wereported chemical synthesis of Li@C60 and its conclusive characterization by X-ray structure
analysis, which triggered deeper studies and applications of the C 60-based endohedral
metallofullerene.[1,2] However, poor solubility of Li@C60 has been a heavy drawback for its
application. Aiming at the application of the material in various research fields, tuning of its
properties by chemical functionalization has been strongly awaited.
In this work, we synthesized lithium-encapsulated PCBM (Li@PCBM), the first Li@C60
derivative, by chemical reduction of previously reported cationic Li+@PCBM TFSI− (Scheme
1).[3,4] The structure and its open-shell character was confirmed by spectroscopic analyses andtheoretical calculation. Dynamic light scattering measurements revealed that Li@PCBM ishighly soluble and can be dispersed as single molecules in common organic solvents such as
chlorobenzene in contrast to the poor dispersibility of pristine Li@C60. According to ourpreviously developed superatomic doping concept,[5] inverted perovskite solar cells were
fabricated using Li@PCBM:PCBM
as an electron transporting layer.
The 1% Li@PCBM:PCBM-useddevice showed a power conversion
efficiency of 9.6% with clearly
improved photovoltaic parameters,
outperforming the control device
Scheme 1. Synthesis of Li@PCBM.
(5.7%).
[1] Ueno, H. et al., Chem. Sci. 2016, 7, 5770.
[2] Okada, H. et al., Carbon 2019, 153, 467.
[3] Matsuo, Y. et al., Org. Lett. 2012, 14, 3784.
[4] Ma, Y. et al., Org. Lett. 2020, 22, 7239.
[5] Ueno, H. et al., Chem. Commun. 2019, 55, 11837.
Corresponding Author: H. Ueno, Tel: +81-22-795-7645, E-mail: E-mail: hiroshi.ueno.d5@tohoku.ac.jp- 93 -

1P-50











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- 94 -

1P-51
Spin current generation by edge plasmon in graphene ribbon○M Shoufie Ukhtary1,2, Yuan Tian2, Riichiro Saito2
1

Research Center for Physics, Indonesian Institute of Sciences (LIPI), Indonesia
2
Department of Physics, Tohoku University, Sendai 980-8578, Japan

Spin current is defined as the difference between charge currents of the spin up and down [1].
The conventional method to generate spin current is by applying voltage on a stack of aferromagnetic material and normal metal, or by using spin-Hall effect on a two-dimensional(2D) material [1]. However, the magnetic material is needed to generate the spin current andthe spin current is tunable only by changing the magnetization, which is not convenient for anano-scale device. A new optical method for generating the spin current without magnetic
material was proposed by Oue and Matsuo, in which they showed that surface plasmon (SP) on
a surface of non-magnetic, three-dimensional (3D) metal generates spin current because therotating electric field of the SP induces spatial dependence of spin accumulation [2]. They founda resonant condition that enhances the generated spin current. However, the spin current flows
in the direction perpendicular to the surface and the spins are polarized in the planar direction.
In this work, we discuss the generation of spin current
by edge plasmon (EP) on a graphene ribbon. EP is anelectromagnetic wave that propagates along theedges of the ribbon and the electric field is localizednear the edges. In contrast with the SP on 3D metal,
the electric field of EP rotates on the plane ofgraphene that corresponds to the transverse and outFigure 1 EP (red and blue shows oscillation ofof-plane optical spin [3]. We found that the spin induced charges) and the induced magnetization
current Js flows on the surface of graphene with spin- (M). The spin current Js flows on the surface due tothe inhomogenously distributed Mind, which ispolarization in the out-of-plane direction as illustrated induced by the rotating electric field (E) of the EP.
in Fig. 1 [4]. Further, the spin current induced by EP istunable not only by the frequency, but also by the Fermi energy of graphene, which enables
application for a spin-switching device controlled by light and gate voltage.
[1] S. Maekawa, et al., Spin Current (Oxford University Press, New York, 2017).
[2] Oue and Matsuo. PRB 101, 161404R (2020)[3] Bliokh et al. PRL 119, 073901 (2017)[4] Ukhtary et al. PRB 103, 245428 (2021)

Corresponding Author: M Shoufie Ukhtary
E-mail: shoufiet@flex.phys.tohoku.ac.jp- 95 -

1P-52One-step synthesis of Mo2C/C composite film on Mo substrate andevaluation of HER catalytic activities○Shunsuke Numata1 and Hironori Ogata1,2
1Department of Chemical Science and Technology, Hosei University
2
Research Center for Micro-Nano Technology, Hosei University

Electrocatalytic water splitting is one of the suitable methods for hydrogen production.
However, this process relies on the electrocatalysis of the hydrogen evolution reaction (HER).
It is well known that Pt-based electrocatalysts show high current density at low overvoltages
and are efficient HER electrocatalysts. However, since they are rare and expensive, transition
metal carbide (TMC) such as molybdenum carbide has been proposed as an alternative to Pt,
and much research has been done so far. It has been reported that the penetration of carbon
atoms into the transition metal lattice increases the density of d-band electrons at the Fermi
level, leading to Pt-like properties. In addition, it has been reported that HER and conductivity
are improved by synthesizing TMC using nanocarbon materials [1].
In this study, a Mo2C/C composite films were fabricated directly on molybdenum substrateby the microwave plasma chemical vapor deposition (MPCVD) method and the HER catalytic
activity were investigated. We have investigated the effects surface treatments on the starting
molybdenum substrate on the local structure and HER catalytic activity of the Mo2C/C
composite films. We have also investigated the HER catalytic activities of metal carbide / C
composite films on other metal substrates.
Detailed experimental results will be reported on the meeting.

[1] Dezhi Wang et al., ACS Sustainable Chem Eng, 6, 13995 (2018).
Corresponding Author: H. Ogata
Tel: +81-42-387-6229, Fax: +81-42-387-6229,
E-mail: hogata@hosei.ac.jp- 96 -

1P-53
Schottky barrier height control by reducing Fermi level pinning effectbetween the single-layer WS2 and ITO electrodes for high-performancetransparent solar cells○X. He, T. Kaneko, and T. Kato

Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
Transition metal dichalcogenides (TMD) is one of the most attractive materials for futuretransparent and flexible optoelectrical devices due to their atomically thin structure, band gap
in visible light range, and high optical transparency. Those merits of TMD have not been
applied for transparent and flexible solar cell, which is attracting intense attention as a nextgeneration energy harvesting technology. Recently, we have developed a new fabrication
process of TMD-based solar cell [1]. In our process, Schottky type device configuration is
utilized, which can be simply formed by asymmetrically contacting electrodes and TMD (Fig.
1). The power conversion efficiency (PCE) can be reached up to 0.7 %, which is the highest
value for solar cell with similar TMD thickness [1].
In order to improve the PCE of transparent
Schottky solar cells (TSSC), it is important tounderstand Schottky junction contacts between ITO
and monolayer WS2. In previous studies, we
modified the ITO surface with thin metals (Mx = Ag,
Au, Cu, Ni) and directly measured Schottky barrierheight (SBH). It was proved that Mx = Cu includes
weaker Fermi level pinning (FLP) effect and higher
SBH, resulting in better PCE compared with othermetals (Mx = Ni, Ag, Au). However, the Fermi level
pinning factor (S) of Cu is about 0.25, which meansthat there still exist inevitable Fermi pinning effectin contact.
Reducing the FLP effect and further increasing
SBH is very important for improving the PCE of
TSSC. Then, in this study, we attempted to insert an
insulating oxide film material WO3 to reduce the
Figure 1: (a) Structure of TMD
FLP. As a result, the SBH and the PCE of TSSC was
found to be greatly improved by inserting WO3 TSSC (b) normalized PCE of TMD
between Cu and TMD. This finding is important for TSSC with different electrodes.
understanding the contact between TMD and ITOelectrodes, and improving the PCE of TSSC.
[1] T. Akama, W. Okita, R. Nagai, C. Li, T. Kaneko, and T. Kato, Sci. Reports 7, 11967 (2017).
Corresponding Author: Toshiaki Kato
Tel: +81-22-795-7046, Fax: +81-22-263-9225, E-mail: kato12@ecei.tohoku.ac.jp- 97 -

1P-54











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326(16,256$6,&32/$4,;$6,21$6% !$1'&  !)24 5(&1P-55Lateral growth of twisted graphene on graphene/SiC template in a continuous
vacuum environment○

Yao Yao1, Taiki Inoue1, Royta Negishi1,2, Makoto Takamura3, Yoshitaka Taniyasu3 andYoshihiro Kobayashi1
1Osaka University, Osaka 565-0871, Japan
Toyo University, Tokyo 112-0001, Japan
3
NTT Basic Research Laboratories, Kanagawa 243-0124, Japan
2

Twisted few layer graphene (FLG) has recently attracted great attention due to the appearanceof the exotic electrical properties [1]. In previous study, we reported that the FLG wassynthesized by overlayer growth of graphene on a monolayer graphene template (MLGT) using
a chemical vapor deposition (CVD) method. We found that moiré pattern appears in the lattice
structure of the grown graphene 2-dimensional (2D) island and the grown 2D graphene islands
have the random twisted angles. Coalescence process of graphene island with various twist
angles was indicated by temperature and pressure dependence of graphene island size [2]. In
this study, based on understanding the growth mechanism of twisted FLG, we further optimized
the MLGT. By reducing the nucleation sites on the MLGT, large-area lateral growth of twisted
graphene can be realized.
(b)(a)
The MLGT used in previous studies were possibly contaminatedwith adsorbates due to air exposure during the step-by-step processesof MLGT formation and overlayer graphene growth in different
vacuum chambers. In order to obtain the cleaner MLGT surface withless nucleation sites, the two processes were continuously performed
in an argon atmosphere in an IR heating furnace. Atomic force andscanning tunneling microscope (AFM/STM) are used to evaluate thesurface morphology.
The CVD growth mechanism of twisted FLG on MLGT was
proposed by the analysis of STM/AFM images (Fig. 1). Moiré patternin an STM image with different lattice structure indicates the diverse
twisted angles and the coalescence growth process. It is typicallyshown in initial nucleation stage that graphene islands nucleate very
closely. Then, graphene islands gradually approach to each other inlateral directions as they grow. Based on the knowledge of CVD Fig. 1 Initial nucleation stage
growth mechanism, we reduced the nucleation sites during the initial and later growth stage.
nucleation by cleaner MLGT surface to provide enough space for the(further lateral growth (Fig. 2). By comparing Fig. 2a and 2c, the flat
surface of MLGT under continuous growth is verified. Fig. 2b and 2d((
illustrate the twisted FLG grown on MLGT with the same conditions
via CVD growth, which shows a significant reduction in nucleationbsites and nucleation on step edges. It is further expected to makeprogress in the large-area lateral growth of twisted graphene.
[1] R. Negishi et al., Physical Status Solidi B 257, 1900437 (2020).
[2] Y. Yao et al.,68th Japan Society of Applied Physics Spring Academic Lecture.
Fig. 2 Optimized results
for continuous growth.

Corresponding Author: Y. Kobayashi
E-mail: kobayashi@ap.eng.osaka-u.ac.jp- 99 -

1P-56
Wire-to-Ribbon Conversion in Transition Metal Chalcogenides○Hong En Lim1,*, Zheng Liu2, Jiang Pu3, Hiroshi Shimizu1, Takahiko Endo1, Yusuke
Nakanishi1, Taishi Takenobu3, Yasumitsu Miyata1,*
12

Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
Innovative Functional Materials Research Institute, National Institute of Advanced Industrial Scienceand Technology (AIST), Nagoya, Aichi 463-8560, Japan3
Department of Applied Physics, Nagoya University, Chikusa, Nagoya 464-8603, JapanThe unique electronic and magnetic properties predicted in 1D transition metal
dichalcogenides (TMDCs) nanoribbons have attracted a rapid growing interest in theirfabrication along with the 2D counterpart. [1, 2] Numerous synthetic methods have beendeveloped thus far using chemical vapor deposition, molecular beam epitaxy, and templated
growth. [3-6] Nonetheless, it has been challenging to accomplish a controllable growth of theirgeometry, structure, and orientation. For that, a constant search for an improved fabrication
approach with new precursor materials is hence required.
By using tungsten telluride, WTe atomic wires as template precursors, we demonstrate apredefined growth of horizontally or vertically aligned TMDC nanoribbons in this study. The
ability to synthesize and control the fine geometrical structure of WTe has not been possible
until recently. [7, 8] Using these well-defined nanowires, 1D nanoribbons of WS2, WSe2 or
WTe2 were prepared by chalcogenization, in which the WTe was annealed in the respective
chalcogen vapors. Horizontally or vertically aligned, layered structures of the nanoribbon
fabricated were observed using high-angle annular dark field scanning electron microscopy(HAADF-STEM) and TEM. In addition, randomly organized or unidirectionally oriented
network of these ribbons were formed with the different growth substrates used. Polarized
Raman measurements revealed a strongly anisotropic optical response. The field effecttransistors (FETs) fabricated based on such 1D WSe2 network showed an ambipolar electronic
behavior, implying its potential as 1D channel material for nanoelectronics.
References[1] Y. Li et al., J. Am. Chem. Soc. 130, 16739-16744(2008).
[2] P. Cui et al., Nano Lett. 17, 1097-1101 (2017).
[3] Z. Wang et al., J. Am. Chem. Soc. 132, 1384013847 (2010).
[4] J.-B. Wu et al., Adv. Opt. Mater. 4, 756-762 (2016).
[5] S. Li et al., Nat. Mater. 17, 535-542 (2018).
[6] T. Chowdhury et al., Nat. Nanotechnol. 15, 29-34(2020).
[7] M. Nagata et al., Nano Lett. 19, 4845-4851 (2019).
[8] H. E. Lim et al., Nano Lett. 21, 243-249 (2021).
Corresponding Authors:
H.E. Lim, Y. Miyata
Tel: +81-42-677-2508
E-mail: lim@tmu.ac.jp; ymiyata@tmu.ac.jp

Figure 1 (Left) Cross-section TEM images of thevertically and horizontally aligned WSe2
nanoribbons. (Right) HAADF−STEM image of asuspended WSe2 nanoribbon.

- 100 -

1P-57
Improved synthesis of WS2 nanotubes with relatively small diameters bytuning sulfurization timing and reaction temperature○ Md. Ashiqur Rahman1,2, Yohei Yomogida1, Mai Nagano1, Ryoga Tanaka1, Yasumitsu
Miyata1, and Kazuhiro Yanagi1
1Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan.
2
Department of Physics, Comilla University, Cumilla-3506, Bangladesh.

Tungsten disulfide (WS2) nanotubes are cylindrical multiwall nanotubes of WS2 sheets. As
opposed to carbon nanotubes, WS2 nanotubes possess only semiconducting characteristics
regardless of how they are rolled and have advantages for semiconductor applications.WS2
nanotubes are also scientifically interesting because of their unique properties caused by chiralnanotube structure, such as non-reciprocal conduction [1] and photovoltaic properties [2]. Theirproperties depend on their diameter and wall number, and thus synthesis of uniform WS2
nanotubes are great important for correct understanding of their properties. Previously [3],relatively small-diameter WS2 nanotubes were synthesized using solvothermally synthesizednanowires as precursors. The obtained samples exhibited relatively uniform nanotube structures,but in the samples, there were a lot of degraded nanoparticles and nanoflakes as by-products,
which impede understanding of the physical properties of WS2 nanotubes and their applications.
In this study, we removed such by-products by precisely controlling reaction temperature andtuning the sulfurization timing and succeeded to produce the860 C
uniform nanotube sample with relatively small diameters.
Tungsten oxide nanowire precursors were synthesized
via solvothermal reaction of WCl6 in ethanol, carried out in a
Teflon-lined stainless-steel autoclave at 180°C for 24 h.
Then, the obtained nanowires were reacted with sulfur
precursor at various temperatures ranging from 750 to 860°C
for 1 h in Ar flow by precise control of temperature andadjusting the timing of vaporization of sulfur in the two
50 nm
different synthesis conditions (Method 1 and 2). The
annealing time of the nanowire precursors for Method 2 isFig. 1. TEM image of synthesized
shorter that for the Method 1.
WS2 nanotubes by Method 1. The
Fig. 1 shows a typical TEM image of WS2 nanotubes red, blue, and green arrows
synthesized by Method 1. We observed the nanotube and non- represent typical samples ofnanotube structures (such as particle-like (nanoparticles) and nanotubes, nanoparticles andflake-like structures (nanoflakes) simultaneously under all nanoflakes, respectively.
conditions of Method 1. On the other hand, we observed very
uniform nanotube samples with well removed nanoflakes
structures by reducing the annealing time of the nanowire
precursors which shows in Fig. 2. Thus, the chalcogenization
timing and reaction temperature are considered to beimportant in the synthesis of inorganic nanotubes.
[1] F. Qin et al., Nat. Commun. 8, 14465 (2017).
[2] Y. J. Zhang et al., Nature 570, 349-353 (2019)[3] Y. Yomogida et al., Appl. Phys. Express 12, 085001(2019).
Corresponding Author: K. Yanagi, Tel: +81-42-677-2494,
Fax: +81-42-677-2483 E-mail: yanagi-kazuhiro@tmu.ac.jp- 101 -

50 nm
Fig. 2. TEM image of synthesized
WS2 nanotubes by Method 2.

1P-58
Molecular dynamics study on open-edge growth of boron nitride nanotubes
from single-walled carbon nanotube template
�Kaoru Hisama1,2, Ksenia V. Bets3, Nitant Gupta3, Yongjia Zheng1, Rong Xiang1,
Keigo Otsuka1, Shohei Chiashi1, Boris I. Yakobson3 and Shigeo Maruyama1*
1Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan2

3

Department of Physics, University of Tsukuba, Tsukuba 305-8571, Japan
Department of Materials Science & NanoEngineering, Rice University, Houston TX 77005, USA

Recent advances in chemical vapor deposition (CVD) technique for low-dimensional materials haverealized syntheses of single-walled carbon nanotube (SWCNT) encapsulated in boron nitride nanotube(BNNT) experimentally [1]. This SWCNT@BNNT keeps the electronic structure of SWCNT near the
Fermi level [2] and is expected as a conducting channel with an atomically thin dielectric layer.
However, controlling over the quality, or the crystallinity of BNNT coating around SWCNT by CVD
remains difficult to achieve, warranting a deeper exploration using molecular dynamics (MD)simulations with empirical potentials to reveal the growth mechanism of BNNT in SWCNT@BNNT.
A system with (6,6) SWCNT is supplied with B3N3 molecules, and floating clusters or isolated B andN atoms are systematically removed, emulating conditions inside a CVD reactor. Lennard-Jones
interactions are primarily used between BN and C atoms, and it is found that spontaneous BN nucleation
is not likely to occur around the SWCNT, at least until 9 ns of simulation at 1900 K [Fig. 1 (a)]. On theother hand, an elongation growth from initial (20,0) BNNT seed is successfully observed [Fig. 1(b)].
This grown BNNT structure with sharp-cut edges is consistent with experimental observation bytransmission electron microscope (TEM) [Fig. 1(c)] [3]. Furthermore, the unrolled snapshot of Fig. 1(b) shows that predominantly the simulated structure is terminated with zigzag edges of B [Fig. 1 (d)],providing insight into the similarly observed experimental preference of the edge shape in BNNT.
(a)

(b)

(c)

(d)

5 nm

Figure 1 (a) a snapshot of MD simulation with no seed BNNT, after 9 ns at 1900 K. (b) a snapshot with a (20,0)
BNNT seed, after 9 ns at 1900 K. (c) Experimental TEM image of SWCNT@BNNT. (d) an unrolled image of Fig.
1 (b). Pink, blue, and green points in snapshots denote B, N and C atoms, respectively.

[1] R. Xiang et al., Science 367, 537 (2020).
[2] K. Hisama et al., Appl. Phys. Express 13, 015004 (2020).
[3] Y. Zheng et al., Submitted (2021).
Corresponding Author: Shigeo Maruyama

E-mail: maruyama@photon.t.u-tokyo.ac.jp- 102 -

1P-59Avidin-biotin interactions on locally functionalized single-walled carbon
nanotubes for photoluminescence wavelength shifts○Yoshiaki Niidome1, Rie Wakabayashi1, Masahiro Goto1, 2, Tsuyohiko Fujigaya1, 3, 4,
Tomohiro Shiraki1, 3
1

Department of Applied Chemistry, Kyushu University, Fukuoka 819-0395, Japan
2
Center for Future Chemistry, Kyushu University, Fukuoka 819-0395, Japan
3
WPI-I2CNER, Kyushu University, Fukuoka 819-0395, Japan
4
Center for Molecular Systems, Kyushu University, Fukuoka 819-0395, Japan

Defect doping through local chemical functionalization to single-walled carbon nanotubes(SWCNTs) has produced locally functionalized SWCNTs (lf-SWCNTs) that show enhanced
photoluminescence (PL) in near infrared (NIR) regions. [1-3] The doped sites of lf-SWCNTs
work as new emissive sites that have narrower bandgaps and trap mobile excitons to belocalized states. As a result, lf-SWCNTs emit red-shifted and brighter E11* PL from localized
excitons compared to E11 PL of pristine SWCNTs. We have reported small molecule binding at
the doped sites of lf-SWCNTs based on supramolecular approaches to selectively shift E11* PLwavelengths. [3] Recently, microenvironments surrounding lf-SWCNTs have been found as a
key factor to modulate E11* PL properties. [4-6] In particular, larger solvatochromic shifts ofE11* PL occurred than E11 PL due to exciton localization effects at the doped sites. [5,6]Here, we create biomolecule binding systems at the doped sites using avidin-biotin
interactions and observe PL wavelength shifts induced by biomolecular interactions. We
synthesized biotin-modified lf-SWCNTs (lf-SWCNTs-b) via diazonium chemistry. Fig. 1
shows PL spectrum of synthesized lf-SWCNTs-b. Peaks at
980 nm and 1136 nm were observed, which are assigned to
E11 transition at the pristine sites and E11* transition at the
doped sites for (6,5) lf-SWCNTs-b. Mixing of neutravidin
to the lf-SWCNTs-b solution induced red-shifts of E11* PLby 3 nm. This shift value was larger than that of E11* PL
observed for methoxyaryl-modified lf-SWCNTs that haveno biotin units. The result indicates that neutravidin
selectively bound on the doped sites of lf-SWCNTs-b andsurrounding microenvironments of the doped sites would bechanged to affect the localized exciton properties. Thus,
protein binding could be useful for exciton PL modulationof lf-SWCNTs and applicable to advanced NIR sensing Fig. 1. PL spectrum of lf-SWCNTs-b
in a miceller solution of D2O.
using the second biological window (1000 – 1350 nm). [7]Oex = 570 nm.

References[1] Y. Wang et al. Nat. Rev. Chem., 3, 375 (2019). [2] S. Tretiak et al. Acc. Chem. Res., 53, 1791 (2020). [3] T.
Shiraki et al. Acc. Chem. Res., 53, 1846 (2020). [4] S. K. Doorn et al. ACS Nano, 12, 8060 (2018). [5] T. Shiraki
et al. Chem. Commun., 55, 3662 (2019). [6] T. Shiraki et al. J. Phys. Chem. C, 125, 12758 (2021). [7] T. Okazaki
et al. Sci. Rep., 5, 840 (2018).
Corresponding Author: T. Shiraki
Tel/Fax: +81-92-802-2841
E-mail: shiraki.tomohiro.992@m.kyushu-u.ac.jp- 103 -

1P-60Circular dichroism spectra of Helicity-sorted
Single-wall Carbon Nanotubes with Controlled Chemical PotentialżYuuya Hosokawa, Yohei Yomogida, Kazuhiro Yanagi
Department of Physics, Tokyo Metropolitan University, Tokyo 192-0397, Japan

Chiral structure of nanotube materials can exhibit very unique physical properties such as bulk
photovoltaic, unconventional superconductivity, and so on [1]. Single-wall carbon nanotubes(SWCNTs) exhibit unique chiral structure, and theoretical studies suggest that their chiralstructures will induce unique physical phenomena such as photo galvanic effect, gigantic
circular dichroism, and so on [2]. However, those phenomena have not been experimentally
verified yet. Previously, we clarified that when we prepare randomly oriented SWCNT films
we can correctly evaluate circular dichroism (CD) character of the helicity-sorted SWCNT thinfilms without detecting the false CD signals [3]. Thus, in this study, we investigated the CD
spectra of the gated (6,5) SWCNT films to clarify whether we can observe the enhancement of
the CD signals by carrier doping.
In this study, we combined electrolyte gating technique and CD measurements. We developed
a home-made sample chamber to apply electric field on the sample during CD measurements
in a commercial CD spectrometer (JASCO, J-1500). We employed ionic gel for electrolyte andapplied gate voltage using side-gating device
structure. All the measurements were performed in
Ar atmosphere.
Figure 1 and 2 exhibit the change of the CD
spectra of (6,5) SWCNTs as the shift of gate
voltage in visible and near infrared regions,
respectively. Here we only plotted the spectra whenhole carriers were injected. As shown here, we
observed significant changes in CD spectra as thesift of gate voltages. When the gate was returned tothe charge neutral point, the spectrum is well
returned to the initial spectrum, and thus theobserved changes in CD spectra were returnable Figure. 1 CD spectra in the visible light region.
and repetitive phenomena. The CD signal causedby E11 peak significantly was significantly
suppressed by the carrier injection, and we
observed the increase of CD signal in some region.
The details will be discussed in the poster.
References:[1] Qin et al., nature comm. 8, 14465 (2017), Zhang et al.,Nature 570, 349 (2019), [2] Ivchenko & Spivak, PRB 66,
155404 (2002), Satco et al., PRB 99, 075403 (2019)[3] Hosokawa et al, The abstract of the 60th FNTG symposium(2021).
Corresponding Author: K. Yanagi
Tel: +81-42-677-2494 e-mail: yanagi-kazuhiro@ tmu.ac.jp- 104 -

Figure 2 CD spectra in the near infrared region.

1P-61
Growth mechanism and handedness relation of
1D SWCNT-BNNT van der Waals heterostructures○Yongjia Zheng1, Akihito Kumamoto2, Kaoru Hisama1, Keigo Otsuka1, Yuta Sato3, Taiki Inoue1,4,
Shohei Chiashi1, Daiming Tang5, Qiang Zhang6, Anton Anisimov7, Esko I. Kauppinen6, Kazu
Suenaga8, Yuichi Ikuhara2, Rong Xiang1, Shigeo Maruyama1
1 Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
2 Institute of Engineering Innovation, The University of Tokyo, Tokyo 113-8656, Japan
3 Nanomaterials Research Institute, AIST, Tsukuba 305-8565, Japan
4 Department of Applied Physics, Osaka University, Osaka 565-0871, Japan
5 International Center for Materials Nanoarchitectonics (WPI-MANA), NIMS, Namiki 1-1, Tsukuba 3050044, Japan
6 Department of Applied Physics, Aalto University School of Science, Tiilenlyöjänkuja 9A SF-01720 Vantaa, Finland
7 Canatu Ltd., Helsinki FIϋ00390, Finland
8 The Institute of Scientific and Industrial Research (ISIR), Osaka University, Osaka 567-0047, Japan

Recently, we presented one-dimensional (1D) van der Waals (vdW) heterostructure that includes
single-walled carbon nanotubes (SWCNTs), boron nitride nanotubes (BNNTs) and molybdenum
disulfide (MoS2) [1]. The shell-by-shell growth of this heteronanotube is different from conventional
growth of 1D homo-material nanotubes where multiple walls are formed simultaneously from ananoparticle. Therefore, nucleation and crystal growth behaviors on these highly curved surfaces are offundamental research interest but is challenging as all processes occur on tiny (only a couple of nm) andhighly curved surfaces. Here we would like to reveal the formation process and growth mechanism ofouter BNNTs, which can be achieved by directly growing 1D structures on the thermally stable microgrid so that transmission electron microscopy (TEM) measurement can be performed directly without
any treatment. This strategy allows heterostructures to keep in the most intrinsic morphology, and many
structure details can be clearly visualized. Furthermore, their handedness relation will also be
investigated.
Fig.1 (a) TEM images and (b)nano-area electron diffraction(NAED) patterns of three different
heteronanotubes, suggesting thechiral angle of outer BNNTs are
27°, 3° and 0°, respectively. (c)Expected atomic arrangements at
the edge of these three BNNTs
revealed by NAED patterns (d)Experimental
HAADF-STEM
image of a BN edge and its
schematic (not exact) atomic
structure. (e) Schematics showing
open edges with two or three kinksteps.

Corresponding Author: S. Maruyama[1] R. Xiang et al., Science, 367, 537 (2020).

Tel: +81-3-5841-6421,[2] Y. Zheng et al., PNAS, in revision (2021).

Fax: +81-3-5841-6983,
E-mail: maruyama@photon.t.u -tokyo.ac.jp- 105 -

1P-62









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1P-64
Anomalous Photovoltaic Effect in Strained Monolayer WS2○Togo Takahashi1, Jiang Pu1, Takahiko Endo2, Yasumitsu Miyata2, Taishi Takenobu1
1

Department of Applied Physics, Nagoya University, Nagoya, 464-8603, Japan2

Department of Physics, Tokyo Metropolitan University, Tokyo, 192-0397, JapanThe bulk photovoltaic effect (BPVE) has been attracting attention because it does not requirep-n junction formation and has a potential to conquer the performance limit of current solar
cells [1]. However, this effect originates from the broken spatial inversion symmetry in the
crystal and the applicable materials are still limited. For example, although monolayer WS2 has
a non-centrosymmetric crystal structure, the three rotational symmetry in the plane cancels out
the electromotive force, and, therefore, one needs the linear polarized light to generate BPVE.
Recently, the enhanced BPVE based on WS2 have been demonstrated using their nanotubes andheterostructures [2,3], concluding that artificial symmetry control is a powerful way to realize
BPVE. Here, we focus on the structural deformation by strain as a method to reduce and control
the symmetry, and try to clarify the relationship between the symmetry and BPVE in strainedmonolayer WS2.
To induce strains, we utilized the difference in the thermal expansion coefficients between
the substrate and sample during chemical vapor deposition (CVD) [4]. After CVD synthesis ofmonolayer WS2 on SiO2 substrate, Au / Ni electrodes were deposited as shown in Fig. 1(a), andelectromotive force measurements were performed by irradiating a laser with a wavelength of
532 nm. Figure 1(b) shows the current-voltage characteristics with and without light irradiation.
Although the device shows high resistance without light irradiation (dashed line), upon lightirradiation (solid line), the device shows a spontaneous
photocurrent at zero voltage in addition to the slopechange (resistance decrease) due to photoexcited
carriers. The effect of the Schottky junction between theelectrode and WS2 was removed by irradiating the lighton the crystal sufficiently far from the electrode (Fig. 1).
Because the CVD-grown WS2 on SiO2 substratenaturally implants strains [4], we considered that theobserved BPVE is due to strain induced symmetry
breaking effect. Therefore, we also investigated therelationship between symmetry control and BPVE inmonolayer WS2 based on the results on SiO2 substrate,
sapphire substrate with local strains, and flexible
substrate that can manipulate intentional strains.
[1] Y. Nakamura et al, OYO BUTURI, 90, 2 (2021)[2] Y. J. Zhang et al., Nature, 570, 349 (2019)[3] T. Akamatsu et al., Science, 372, 68 (2021)[4] G. H. Ahn et al., Nat. Commun. 8, 608 (2017)
Corresponding Author: J. Pu, T. Takenobu
Tel/Fax: +81-52-789-5165
E-mail: jiang.pu@ngoya-u.jp, takenobu@nagoya-u.jp- 108 -

Fig. 1. (a) Device image and measurement
method. (b) I-V characteristics with andwithout light irradiation.

1P-65Controlled surface etching of multilayer hBN
Yi Hsin1, Pablo Solís-Fernández1,2, and Hiroki Ago1,2,*
1Interdisciplinary Graduate School of Engineering Sciences, Kyushu University,
Fukuoka, 816-8680, Japan, 2 Global Innovation Center (GIC), Kyushu University,
Fukuoka, 816-8680, Japan
Hexagonal boron nitride (hBN) has been in the spotlight, owing to the wide range ofapplications, such as insulating substrate for 2D materials, tunnel barrier layers, gas barrier films,
and ultraviolet/quantum light emitters. Although CVD growth of hBN has been widely studied,
there is a limited number of literature reporting etching of hBN. Compared with graphene,
etching of hBN is more difficult due to its chemical stability. Spherical nanoparticles of Pt andNi were reported to etch hBN by moving on its surface, leaving the nanoscale etched trenches [1].
Here, we have studied the hBN etching at lower temperatures with Sn metal and found that Snforms unique triangular nanoplates and etch only the top layer of multilayer hBN. Moreover,annealing in Ar further etched the hBN layer based on a different mechanism.
Being different from the previous works which used exfoliated hBN, CVD-grown multilayerhBN was employed because it allows large-area investigation. Figure 1(a) shows an AFM imageof the multilayer hBN after etching in the presence of Sn vapor at 1000 °C. We observed
triangular Sn nanoplates which created nano-trenches in the hBN while moving on its surface.
The depth of these nano-trenches was ⁓0.3 nm, indicating that the etching occurs only at the top
layer of the multilayer hBN (Figure 1(b)). We also found that the etching occurs preferentiallyalong the armchair directions of the hBN. According to our knowledge, this is the first time thatsuch triangular nanoplates show the etching of 2D materials. Furthermore, as shown in Figure1(c), the trenches became wider when annealed in Ar, suggesting that heat treatment induces
metal-free etching to form zigzag edges. Our work demonstrates unique etching behaviors ofhBN, which provides the surface etching while controlling edge structures that is applicable to
2D nanoelectronics.

(a)

(b)

Nano-trench

(c)
2 nm

0.3 nmSn

hBN wrinkle
0 nm

200 nm

200 nmFig. 1. (a,b) AFM image of multilayer hBN after Sn-assisted etching and height profile of thenano-trench. (c) AFM image of the identical position after Ar annealing.
Reference: [1] H. S. Wang et al. Nat. Mater. 20, 202 (2021).

- 109 -

1P-66
Nano ~ sub-nanometer-width one-dimensional quantum wells embedded in
two-dimensional semiconductors○Nanami Ichinose1, Liu Zheng2, Takashi Taniguchi3, Kenji Watanabe3, and Ryo Kitaura1
Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan
Innovative Functional Materials Research Institute, AIST Nagoya 463-8560, Japan
2
National Institute for Materials Science, Tsukuba 305-0044, Japan1

2

Two-dimensional (2D) heterostructures have attracted plenty of attention. [1] [2] To fully
explore the enormous potential of 2D heterostructures, developing a highly controllable
fabrication technique is crucial. Although 2D van der Waals stackings have been intensively
studied [3] [4], the research on the lateral heterostructures is still limited due to the difficulty infabrication. In this work, we have focused on heterostructures, in which different 2D materials
are laterally integrated side-by-side with a periodicity of down to nanometer scale. These are
atomically thin 2D layers with one-dimensional (1D) stripes, namely 1D quantum wells (QWs),
that align periodically, providing a novel 1-2D mixed-dimensional platform for exploring
crossover from 2D to 1D.
In this study, we focused on heterostructures composed of transition metal dichalcogenide(TMD). Since various TMDs, including metals, semiconductors, superconductors, andtopological insulators, are available, it is possible to realize novel 2D heterostructures withvarious electronic states. The metal-organic chemical vapor deposition (MOCVD) equipmentused in this work can rapidly switch the supply of source materials on the order of seconds torealize nanometer-scale 1D QWs. In addition, the MOCVD setup is a cold-wall type, which can
prevent metal/chalcogen sources from re-evaporation, ensuring stable source supply throughout
a growth process.
In this study, we fabricated 2D lateral heterostructures of WS2/MoS2 on hexagonal boron
nitride by sequential growth of WS2 and MoS2 through rapid switching of supply of W and Mo
source. Figure 1 shows a high-resolution High Angle Annular Dark-Field Scanning
Transmission Electron Microscopy (HAADF-STEM) image of lateral heterostructures
WS2/MoS2. In the HAADF-STEM images, W atoms areimaged as bright spots, whereas Mo and S atoms are images
as much darker spots. As seen, the MOCVD-grown lateralsuperstructure possesses atomically steep interfaces with awidth down to 0.8 nm. This is the narrowest 1D QW of
TMDs with atomically sharp edges ever reported. In thepresentation, we will give details of the growth process andoptical properties of grown heterostructures.
[1] A. K. Geim et al. Nature, 499, 419 (2013).
[2] Y. Kong et al. Nature materials, 13, 1135 (2014).
[3] C. Zhu et al. Nature communication, 11, 772 (2020).
[4] Y. Kobayashi et al. ACS Nano,13, 7527 (2019).
Corresponding Author: R. Kitaura
Tel: +81-52-789-2482, Fax: +81-52-747-6442
Web: http://nano.chem.nagoya-u.ac.jp/
E-mail: r.kitaura@nagoya-u.jp

Fig. 1 A High-magnification HAADF-STEM
image of a WS2/MoS2 hetero structure.

- 110 -

1P-67

N-type polar transition of p-type MoS2 by chemical doping○Hiroto Ogura1, Yoshiyuki Nonoguchi2, Shaochun Zhang3, Yusuke Nakanishi1,
Hong En Lim1, Ryo Kitaura3, Kosuke Nagashio4, Yasumitsu Miyata1
1

Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan
2
Kyoto Institute of Technology, Kyoto 606-8585, Japan3
Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan.
4
Department of Materials Engineering, The University of Tokyo, Tokyo, 113-8656,
Japan

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted muchattention because of their unique physical properties and future device applications. To
realize various devices in electronics, it is essential to control the polarity in TMDC
devices. For this purpose, surface charge transfer by chemical doping provides a powerful
way to control the carrier type of TMDCs [1, 2]. Recently, we have demonstrated thehighly efficient and air-stable electron doping of monolayer MoS2 using a series ofpotassium salts with crown ethers [3]. In this study, we have applied this technique toachieve the n-type polar transition of p-type TMDCs.
P-type MoS2 flakes were prepared by the mechanical exfoliation of Nb-doped bulk
MoS2 crystals. Back-gated field-effect transistors (FETs) of the exfoliated flakes werethen fabricated onto an SiO2/Si substrate. Electron doping was conducted by spin coating
the butanol solution of KOH/benzo-18-crown-6 on MoS2 (Fig.1a). The transfer curve ofpristine MoS2 shows p-type semiconducting behavior (Fig.1b). After the doping, thepolarity of MoS2 changed from p-type to n-type. Similar tendency was also observed for
p-type monolayer MoSe2. We also demonstrated the spatially controlled n-type doping ofpartially masked MoS2. The doped device shows a clear rectifying behavior, suggesting
the formation of p-n junction (Fig. 1c). The present results provide an effective way forthe control of the polarity in TMDC-based devices, benefiting the development ofadvanced electronics.

Figure 1 (a) Schematic illustration of the MoS2 FET and benzo-18-crown-6 with K+ ion. (b) Transfer curvesof the pristine and doped MoS2 with different dopant concentrations from 0.1 to 100 mM. (c) I-V curve of
the partially doped MoS2 with 100 mM dopant solution. The inset is a schematic diagram of a patterned
device.
[1] X. Liu et al., Adv. Mater., 28, 2345-2351 (2016). [2] H. G. Ji et al., Adv. Mater., 31, 1903613 (2019).
[3] H. Ogura et al., Nanoscale, 13, 8784-8789 (2021).
Corresponding Author: Y. Miyata, Tel: +81-042-677-2508, E-mail: miyata-yasumitsu@tmu.ac.jp- 111 -

1P-68Nonlinear anomalous Hall effect in trigonal superconductor PbTaSe2○Yuki Itahashi1, Toshiya Ideue1, Shintaro Hoshino2,
Chihiro Goto1, H. Namiki3, T. Sasagawa3, Yoshihiro Iwasa1,41Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics,
The University of Tokyo, Tokyo 113-8656, Japan2
Department of Physics, Saitama University, Saitama 338-8570, Japan
3
Laboratory for Materials and Structures, Tokyo Institute of Technology, Kanagawa 226-8503, Japan
4
RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan

Symmetry breaking in solids is one of the central issues of condensed matter physics. To
date, a large number of unique physical properties and novel functionalities have been exploredin noncentrosymmetric crystals. Among them, nonlinear anomalous Hall effect, which indicatesthe directional dependent spontaneous Hall effect under time reversal symmetry (Fig. 1 left), isan emerging nonlinear quantum transport [1]. So far, it has been investigated in low-symmetricmaterials such as WTe2 and TaIrTe4 with only one mirror plane and resultant Berry curvature
dipole [2-4]. In principle, however,noncentrosymmetric crystals withhigher symmetry (trigonal crystals,
for example) can also hostnonlinear anomalous Hall effectwith distinctive origin [5] despite
the lack of Berry curvature dipole.
Moreover,thesearchforanomalous Hall effect in exotic
quantum
phasesincluding Fig. 1. Schematic image of nonlinear anomalous Hall effect (left)
superconductivity has been missing and crystal structure of PbTaSe2 (right).
and important challenge.
In this work, we report nonlinear anomalous Hall effect in noncentrosymmetric trigonal
superconductor PbTaSe2 (Fig. 1 right). We observed nonlinear transport signals, which show
the characteristic directional dependence reflecting the trigonal crystal symmetry in bothnormal and superconducting states. Importantly, nonlinear signals are largely enhanced insuperconducting fluctuation region. The present result offers a new aspect of nonlinear transportand superconducting properties.
[1] I. Sodemann and L. Fu, Phys. Rev. Lett. 115, 216806 (2015).
[2] Q. Ma et al., Nature 565, 337–342 (2019).
[3] K. Kang et al., Nat. Mater. 18, 324–328 (2019).
[4] D. Kumar et al., Nat. Nanotechnol. 16, 421-425 (2021).
[5] H. Isobe et al., Sci. Adv. 6, eaay2497 (2020).
Corresponding Author: Y. Iwasa
Tel: +81-3-5841-6822
E-mail: ideue@ap.t.u-tokyo.ac.jp
If the format of this page is broken, Select Printing Layout in “Display” tab.

- 112 -

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1P-70Electrical and mechanical property of homogeneous CNT/Cu composite
wire made from copper nanoparticles decorated spin capable CNT forest○Kosuke Tanaka, Takayuki Nakano, Yoku Inoue
Department of Electronics and Materials Science, Shizuoka University, Hamamatsu 432-8561, Japan

CNT yarns are expected to replace the widely used metallic wires as the lightweight wires ofthe future. Although CNT yarn have a high mechanical property, their electrical property ismuch lower than that of metallic wires. Therefore, mixing CNTs with copper is an effective
way to solve this problem [1,2]. To maximize the synergy effect, the homogeneous compositionof CNT and copper is required. In this study, we fabricated homogeneous CNT/Cu composite
wires with various CNT diameters and investigated the mixing effects in electrical andmechanical properties.
Two types of CNTs with diameters of 10 nm and 40 nm were synthesized using CVD. Then,Cu nanoparticles were wholly deposited on CNTs by decomposing Cu precursor at hightemperatures. A CNT web was then drawn out from a CNT forest to prepare a CNT yarn. CNTs
are decorated with Cu nanoparticles, and therefore, Cu nanoparticles were incorporated inside
the yarn. Then, the CNT yarn was dipped in a copper sulfate aqueous solution and subjected toelectroplating treatment to fabricate a CNT/Cu composite wire. The composite wire was finallyreduced with hydrogen.
Figure 1 shows the relationship between current-carrying capacity (ampacity) and the volume
fraction of CNT. The ampacity of the homogeneous CNT/Cu composite wire exceeded that of
the Cu wire. Since CNTs have a large contact area with the Cu matrix, joule heating at the Cu
is effectively dissipated, lowering the Cu’s temperature even under high current andsuppressing the electrical current breakdown. Figure 2 shows the stress-strain curves of thecomposite wires. We found that the homogeneous composite wire has higher tensile strengthand Young’s modulus than Cu and CNT yarn. This result is attributed to the mixing effect of
Cu and CNT.
[1] R. Sundaram et al., Jpn. J. Appl. Phys. 57, 04FP08 (2018), [2] B Han et al., Carbon, 123, 593-604 (2017)
Corresponding Author: Yoku Inoue
Tel: +81-53-478-1356, Web: http://cnt.eng.shizuoka.ac.jp/, E-mail: inoue.yoku@shizuoka.ac.jp

Fig.1 Ampacity of CNT yarn, Cu wire, and
CNT/Cu yarns (w/ and w/o NPs)

Fig.2 Stress-strain curves of CNT yarn, Cu wire,
and CNT/Cu yarns (w/ and w/o NPs)

- 114 -

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- 115 -

1P-72Comparison between high harmonic generation
in metallic single-walled carbon nanotubes and graphene○Hiroyuki Nishidome1, Kohei Nagai2, Kento Uchida2, Kenji Kawahara3, Junko Eda1,
Hitomi Okubo1, Yohei Yomogida1, Hiroki Ago3, 4, Koichiro Tanaka2, 5, Kazuhiro Yanagi1
Department of Physics, Tokyo Metropolitan University, Tokyo 192-0397, Japan
2 Department of Physics, Kyoto University, Kyoto 606-8502, Japan
3 Global Innovation Center (GIC), Kyushu University, Fukuoka 816-8580, Japan
4 IGSES, Kyushu University, Fukuoka 816-8580, Japan
5 Institute for Integrated Cell-Material Sciences, Kyoto University, Kyoto 606-8501, Japan1

The recent development of the intense mid-infrared laser source enables us to investigate
high-harmonic generation (HHG) in solid, which is a nonlinear optical but non-perturbative
phenomenon [1]. The following two mechanisms are suggested for HHG in solid: the intrabandcurrent and the interband polarization due to carriers driven by the laser field. In particular, theintraband current strongly depends on the anharmonicity of the band dispersion, and thus
materials with highly anharmonic dispersion like a Dirac point, such as graphene and metallic
single-walled carbon nanotubes (m-SWCNTs), are expected to generate unique high harmonics.
Theoretically, HHG intensity in graphene would increase by tuning Fermi-level [2], and thus it
is important to investigate the Fermi-level dependence of HHG in these materials forunderstanding the mechanism of HHG. We have studied the relationship between the electronic
structure, Fermi level, and HHG in semiconducting single-walled carbon nanotubes [3]. Basedon this, in this study, we investigated HHG for m-SWCNTs and graphene with controlled
Fermi-level and compared their behaviors.
For the measurements, we used aligned films of m-SWCNTs and mono-layer graphene
synthesized by chemical vapor deposition. These were made into electrolyte-gate devices tocontrol Fermi level through the application of gate voltage VG. These samples were irradiatedwith a 0.26 eV mid-infrared pulse laser to investigate the relationship between HHG and carrier
injection. Figure 1 shows HHG intensity and source-drain current as a function of VG in (a) mSWCNTs and (b) graphene. Figure (a) m-SWCNT(b) graphene1(a) shows carrier injection would
significantly suppress the 5th
harmonics and slightly decrease the
3rd in m-SWCNTs. On the other
hand, as shown in Fig. 1(b), HHG ingraphene does not change at all. We
will discuss the background of thesebehaviors, including the results oftheoretical calculations.
[1] S. Ghimire et al. Nat. Phys., 15, 10 (2019).
[2] J. D. Cox et al. Nat. Commun., 8, 14380 (2017)[3] Nishidome et al., Nano Lett 20, 6215 (2020)
Corresponding Author: K. Yanagi,
Tel: +81-42-677-2494, Fax: +81-42-677-2483,
E-mail: yanagi-kazuhiro@tmu.ac.jp

Fig.1 HHG intensity (top) and source-drain current(bottom)
as a function of gate voltage- 116 -

1P-73
1HDULQIUDUHGSKRWROXPLQHVFHQFHIURPORFDOO\IXQFWLRQDOL]HGVLQJOHZDOOHGFDUERQQDQRWXEHVV\QWKHVL]HGXVLQJELVDU\OPRGLILHUVZLWKVKRUWOLQNDJHVWUXFWXUHV� Tomohiro Shiraki1, 2, Haruka Aoki1, Tsuyohiko Fujigaya1, 2, 3
1

Department of Applied Chemistry, Kyushu University, Fukuoka 819-0395, Japan
2
WPI-I2CNER, Kyushu University, Fukuoka 819-0395, Japan
3
CMS, Kyushu University, Fukuoka 819-0395, Japan

3/,QWHQVLW\DX

Local chemical functionalization of single-walled carbon nanotubes (SWCNTs) has beendeveloped to enhance their photoluminescence (PL) appearing in the near infrared (NIR)
region.[1-4] This functionalization dopes local defects such as sp3 carbons to thesemiconducting crystalline sp2 carbon networks of SWCNTs for the creation of locallyfunctionalized SWCNTs (lf-SWCNTs). Accordingly, emissive doped sites that have narrowerband gaps and exciton trapping features are formed in lf-SWCNTs and E11* PL appears with
red-shifted wavelengths and increased PL quantum yields compared to original E11 PL ofpristine SWCNTs. To date, diazonium chemistry using aryldiazonium salts have allowed us tomodify various molecules on the doped sites, by which wavelength modulation in the NIR
regions has been achieved based on the chemical structure variation of the functionalized
molecules.[1,2,4] In particular, bisaryldiazonium salts, which have two reactive aryldiazonium
groups linked with a spacer moiety, have been designed for proximal defect doping and foundto produce E112* PL over 1250 nm regions for the lf-SWCNTs.
In this study, we newly design bisaryldiazonium salts with a short linkage structure of anaphthalene unit (NbAD) instead of previously used methylene chain linkers. NbAD wassynthesized using diiodonaphthalene through Suzuki-Miyaura coupling followed bydiazotization. The local chemical functionalization was conducted by mixing solubilized
SWCNTs (CoMoCAT, (6,5) enriched) in an aqueous micelle solution and NbAD. Fig. 1 shows
PL spectrum of SWCNTs reacted with NbAD. A
distinct PL peak appeared at 1142 nm, which was redshifted compared to E11 PL (986 nm) of pristine (6,5)
SWCNTs and was recognized as E11* PL generated by
the functionalization. Interestingly, the wavelength of
PL originating from the NbAD functionalization
appeared in shorter wavelength regions than E112* PL
observed for previous bisary-functionalized lfSWCNTs.[1,2] The result indicates that the positions of
the proximal sp3 carbon defects would be varied
depending on the linker structure differences andsignificantly change PL wavelengths of lf-SWCNTs.







[1] T. Shiraki, Chem. Lett., , 394 (2021).
[2] T. Shiraki et al., Acc. Chem. Res., , 1846 (2020).
[3] S. Tretiak et al., Acc. Chem. Res., , 1791 (2020).
[4] Y. Wang et al., Nat. Rev. Chem., , 375 (2019).
Corresponding Author: T. Shiraki
Tel�Fax: �81-92-802-2841,
E-mail: shiraki.tomohiro.992@m.kyushu-u.ac.jp- 117 -: DYHOHQJ WKQP

Fig. 1 PL spectrum of SWCNTs reactedwith NbAD, Oex � 570 nm.

1P-74*URZWKRIVLQJOHZDOOHGFDUERQQDQRWXEHVIURP,UFDWDO\VW 
RQDOXPLQDEXIIHUOD\HUSUHSDUHGE\GLSFRDWLQJSURFHVV
1

�Shu Kondo1, Daiki Yamamoto1, Kamal P Sharma2, Takahiro Saida1,2,
Shigeya Naritsuka3, Takahiro Maruyama1,2

Department of Applied Chemistry, Meijo University, Nagoya 468-8502, Japan
2
Meijo Nanomaterial Research Center, Nagoya 468-8502, Japan3
Department of Materials Science and Engineering, Meijo University, Nagoya 468-8502, Japan

,QWURGXFWLRQOur group has succeeded in growing vertically aligned small-diameter single-walled carbon
nanotubes (SWCNTs) on a SiO2/Si substrate [1] and Al2O3/SUS foils [2] by the alcoholcatalytic CVD (ACCVD) method using an Ir catalyst. However, the formation of Al2O3 layersby the sputtering deposition is not suitable for mass production because it uses a vacuum
system. Here, we have attempted to grow SWCNTs using an Al2O3 buffer layer which wereprepared by the dip-coating technique using an Al chloride.
([SHULPHQWDO3URFHGXUH
To form alumina buffer layers, the SUS 304 foils were immersed in a 0.2 M aluminum
chloride-containing ethanol solution, withdrew at a rate of 1 mm/sec, and then heated at
200 C for 15 min in air. After repeating this dip-coating process 1 - 4 times, the foils wereannealed at 300 �C for 1 h. Then, an Ir catalyst was deposited by pulsed arc plasma discharge.
SWCNT growth was carried out in a hot-wall CVD apparatus. The substrate temperature wasraised to 850 �C in an Ar/H2 atmosphere at a flow rate of 100 sccm, then, ethanol of 500 sccm
was supplied for 10 min to grow SWCNTs. The samples were characterized by FE-SEM and
Raman spectroscopy.
5HVXOWVDQGGLVFXVVLRQ
Fig.1 shows Raman spectra for SWCNTs
grown on an alumina buffer layer (Thenumber of dip-coating process is 1). BothRBM peaks and G band peaks wereobserved. The SWCNT diameters estimatedfrom the wavenumbers of RBM peaks were
distributed between 0.8 and 1.6 nm. Our
results showed that SWCNTs can be grownusing alumina buffer layers formed on SUS)LJ5DPDQVSHFWUDLQ D WKH5%0UHJLRQDQG
foils by the dip-coating method.
E WKHKLJKIUHTXHQF\UHJLRQRI6:&17VJURZQ$FNQRZOHGJPHQWVRQ DOXPLQD EXIIHU OD\HUV SUHSDUHG E\ D GLSPart of this research was supported by the FRDWLQJPHWKRG
private university research branding project�Meijo University Brand Building Program by Creating New Nanomaterials� and JSPS
Bilateral International Joint Research Projects.
[1] T. Maruyama et al. Appl. Surf. Sci.,  (2020) 145340.
[2] S. Kondo et al., JSAP Spring Meeting, 19p-P02-2.
Corresponding Author: T. Maruyama
Phone: 81-52-838-2386, Fax: 81-52-832-1172
E-mail: takamaru@meijo-u.ac.jp- 118 -

1P-75Comparison of single-walled carbon nanotube growth with Ir catalyst
on SiO2 layer prepared by different methods:
Sputtering method vs thermal oxidation○Daiki yamamoto1, Shu kondo1, Kamal P Sharma1, Takahiro Saida1,2,
Shigeya Naritsuka3, Takahiro Maruyama1,2
1

Department of Applied Chemistry, Meijo University, Japan
Nanomaterials Research Center, Meijo University, Japan

2
3

1.

2.

3.

Department of Materials Science and Engineering, Meijo University, Japan

Introduction

Single-walled carbon nanotubes (SWCNTs) are one-dimensional materials, having various
potential for future nanoelectronics. So far, we have succeeded in growing vertically aligned smalldiameter SWCNTs on SiO2/Si substrates by alcohol catalytic chemical vapor deposition (ACCVD)
with Ir catalyst [1]. However, there have been few studies on SWCNT growth using Ir catalysts,
particularly, the effect of structural property of SiO2 layers. In this study, to investigate the effect ofstructural properties of SiO2 layers, we performed SWCNT growth by ACCVD using Ir catalysts on
SiO2 layers prepared by different methods.

Experimental procedure

Ir catalysts were deposited on a SiO2/Si substrate prepared by thermal oxidation of Si
substrates and on a SiO2 layer prepared by the sputtering deposition on a Si substrate. The thicknessof deposited SiO2 was 20 nm. The nominal thickness of the Ir catalyst deposited was 0.3 nm. SWCNT
growth was performed by an ultra-high vacuum (UHV) CVD system. Ethanol gas was supplied
through nozzle onto the substrates [1]. The growth time was 60 min. The grown SWCNTs wereanalyzed by Raman spectroscopy.

Result and Discussion

Fig. 1 (a) and (b) shows Raman spectra of the SWCNTs grown on the thermally oxidiezed SiO2
substrate and the sputtered SiO2 layer just under the nozzle at an ethanol pressure 1 × 10-2 Pa,
respectively. Fig. 1 (c) and (d) shows Raman spectra of
the area on the sample surface with the higheset SWCNT
yield. Irrespective of the surface area, the diameter
distributions were similar for both samples, but thediameters of SWCNTs grown on the sputtered SiO2 wereslightly smaller. We will discuss the effect of surface
roughness and surface composition on the SWCNT yield.
This work was supported in part by Private
University Research Branding Project from the Ministryof Education, Culture, Sports, Science and Technology(MEXT), Japan.
[1] T. Maruyama et al. Appl. Surf. Sci. 509 (2020) Figure 1 Raman spectra of SWCNTs
grown on (a, c) thermally oxidized SiO2
145340.
Corresponding Author: T. Maruyama
Phone: 81-52-838-2386, Fax: 81-52-832-1172
E-mail: takamaru@meijo-u.ac.jp- 119 -

substrate and (b, d) sputtered SiO2 layer.
(a, b) shows Raman spectra of the area justunder the nozzle, and (c, d) shows thosefor the area with highest yield.

1P-76
Quantitative crystallinity investigation of carbon nanotubes produced byplasma-assisted gas-phase synthesis using far-infrared spectroscopy○Takashi Tsuji1, Kazufumi Kobashi1, Guohai Chen1, Jaeho Kim2, Hajime Sakakita2, Yoshiki
Shimizu3,4, Kenji Hata1, Don N. Futaba1, Shunsuke Sakurai1
1

CNT-Application Research Center, AIST, Ibaraki 305-8565, Japan
Innovative Plasma Processing Group, Research Institute for Advanced electronics andPhotonics, AIST, Ibaraki 305-8568, Japan
3
Nanomaterials Research Institute, AIST, Tsukuba, Ibaraki 305-8565, Japan
4
AIST-UTokyo Advanced Operando-Measurement Technology Open Innovation Laboratory(OPERANDO-OIL), AIST, Kashiwa, Chiba 227-8589, Japan
2

Crystallinity of carbon nanotubes (CNTs) is important for CNT-based devices and materials
as it strongly affects their properties, such as electric/thermal conductivity and mechanicalstrength. In addition, crystallinity plays a role in the transfer of properties from the nanometerto millimeter length scales. Therefore, synthesizing highly crystalline CNTs and quantitatively
demonstrating their crystallinity are desired. One of the common parameters to evaluate CNT
crystallinity is the Raman G/D ratio. However, the richness of Raman spectra renders thisapproach to be quantitatively inaccurate for this purpose as the signal is dependent on the defectdensity in CNT graphitic walls and also on CNT diameter and amount of carbon impurities inthe sample. Transmission electron microscopy (TEM) of the graphitic structure is exceptionally
powerful in visualizing the defects at the atomic level but less quantitative. Recently, a method
for estimating the length of CNTs by far-infrared (FIR) spectroscopy have been reported [1].
The length of the crystalline CNT section between defects (so called “effective length”) can be
estimated from the FIR absorption peak using one-dimensional plasmon model. Because“effective length” is less sensitive to the diameter and impurities, it can be a quantitative
indicator for the crystallinity of CNTs.
Here, we report a quantitative examination of crystallinity of CNTs produced by newly
developed plasma-assisted gas-phase synthesis method. For the synthesis of CNTs, Fe catalyst
nanoparticles were produced by the decomposition of Fe(CO)5 using the recently developed
microplasma reactor [2,3] and then mixed with carbon source (C2H4) in a thermal reactor (925oC) to initiate nucleation and growth of CNTs. FIR spectroscopy was used to characterize the“effective length” of the CNTs, thus providing an objective and quantitative analysis method
on an absolute scale. Our results showed that the “effective length” of our CNT productdetermined was ~700 nm, which was limited by the physical length of the CNTs. Comparison
with FIR measurements of other commercially available single-walled and few-walled CNTs
showed that this “effective length” fell within the range of other gas phase synthesis techniques.
In addition, this comparison further showed a clear tendency expected from stress-related
effects on the “effective length” intrinsic to the synthetic method.
[1] T. Morimoto et al. ACS Nano 8, 9897 (2014).
[2] T. Tsuji et al. Carbon, 173, 448-453 (2020).
[3] T. Tsuji et al. ACS Omega, DOI:10.1021/acsomega.1c01822.
Corresponding Author: T. Tsuji
Tel: +81-29-861-0254, Fax: +81-29-861-4851
E-mail: takashi.tsuji@aist.go.jp- 120 -

1P-77The effect of oxidants on SWCNT growth analyzed byisotope labeling technique○Ryoya Ishimaru1, Keigo Otsuka1, Taiki Inoue2, Shohei Chiashi1, Shigeo Maruyama1
1

Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan2
Department of Applied Physics, Osaka University, Osaka 565-0871, Japan

Single-walled carbon nanotube (SWCNT) is the most expected material for next-generation
high-performance electronics. To grow long, dense SWCNTs suitable for the applications, theunderstanding of growth mechanisms, especially growth termination and incubation isnecessary. Previous studies succeeded in growing long, dense SWCNTs by oxidant-assisted
synthesis and suggested that oxidants keep catalysts active by preventing carbon coating [1,2].
For a better understanding of oxidant effects on SWCNT growth, we analyzed SWCNT growthwith a recently proposed isotope labeling technique [3,4], which allows us to trace the growth
process of individual tubes, including their termination and incubation time.
As an oxidant, water was chosen and added from the middle of the growth. In addition to12
C ethanol, main carbon source, 13C ethanol was introduced every 1 min, serving as isotope
labels inserted into SWCNTs. Total flow rate of ethanol was fixed as the water to ethanol ratio
being 0.07. For the post-synthesis analysis, we used Raman mapping images to detect the labelsand obtained growth curves of SWCNTs synthesized with the additive water (Fig. 1). SWCNTs
continued growing and the growth rate did not change at this water/ethanol ratio. We also
compared the growth termination time of SWCNTs synthesized with and without water (Fig.
2(a-b)). Much more SWCNTs synthesized with water kept growing until the carbon supply was
stopped (12 min). We also focused on the effect of air leak in the CVD system, which could
serve as another oxidant. Two experiments were conducted using 13C gas piping with low andhigh leakage, yielding the distributions of incubation time in Fig. 3(a) and (b), respectively. As
we added a maximum amount of 13C ethanol every 3 min, corresponding to the biased
distributions in Fig. 3(b), the growth incubation assisted by the air leak is suggested.

Fig. 1 Growth curve of an SWCNT
grown with water addition fromthe middle of the experiment.

Fig. 2 Growth termination time
distributions of SWCNTs grown (a)with water and (b) without water.

[1] T. Yamada et al., Nano Lett., 8, 4288 (2008).
[3] K. Otsuka et al., ACS Nano, 12, 3994 (2018).
Corresponding Author: S. Maruyama

Fig. 3 Incubation time distributionsof SWCNTs grown with (a) low
and (b) high leakage.

[2] D. N. Futaba et al., Adv. Mater, 21, 4811 (2009).
[4] B. Koyano et al., Carbon, 155, 635 (2019).

E-mail: maruyama@photon.t.u-tokyo.ac.jp- 121 -

1P-78
Production of atom-encapsulated C60 by ns laser induced breakdownMoeno Maejima1, Haruo Shiromaru1, Tomonari Wakabayashi2,
Koichi Kikuchi1, Yohji Achiba1, Takeshi Kodama3
1

Department of Chemistry, Tokyo Metropolitan University, Tokyo 192-0397, Japan2
Department of Chemistry, Kindai University, Higashi-Osaka 577-8502, Japan
3
Center for Basic Education and Integrated Learning, Kanagawa Institute of Technology,
Kanagawa 243-0292, Japan

C60 can encapsulate an atom, typically group V elements and noble gas elements, inside its
cage. The encapsulated atom is located in the center of C60 and is shielded from the outside.
So far, various approaches have been developed for producing atom-encapsulated C60, forexample, ion implantation method for group V elements and high temperature/pressure
method for noble gas elements [1]. In the former method, ions with appropriate energies are
implanted to C60, and several different techniques have been used to provide ions: a Kaufman
ion source [2], a glow discharge [3], an RF discharge [4] and a laser ablation [5]. In this study,
we tried to synthesize N@C60 by the novel and relatively simple way, using ns laser induced
breakdown (LIB) in nitrogen gas flow.
The experiments were performed with the setup schematically shown in Fig. 1. First, C60
was sublimed to form a C60 film on the upper electrode plate. Next, low-pressure nitrogen gas
was introduced to the cell and ns laser was tightly focused at the center, confirming that the
LIB plasma was visible. Formed cationic species were accelerated toward the C60 film by theelectric field and collided with C60.
Figure 2 shows the ESR spectrum of the solution that ion-bombarded C60 film wasdissolved into CS2. The triplet signal was assigned to the internal atomic nitrogen of N@C60,
S=3/2 coupled with nuclear spins 14N (I=1). In the symposium, the production yield for
N@C60 at various experimental conditions will be presented and its dependence on theconditions also discussed.
+− (ground)N2 gas out

ns laser

LIB
N2 gas inmeshheaterelectrode plates

C60 powder

Fig. 1 The schematic view of the experimental setup.

Fig. 2 The ESR spectrum of produced N@C 60.
Broad signal was assigned to impurity.

[1] M. Saunders, et al. J. Am. Chem. Soc. 116, 2193 (1994).
[2] B. Pietzak, et al. Carbon 36, 613 (1998).
[3] B. Pietzak, et al. Chem. Phys. Lett. 279, 259 (1997).
[4] T. Wakabayashi and T. Kuroda, The 35th Commemorative Fullerene-Nanotubes General Symposium, 3P-8 (2008).
[5] H. Itagaki, et al. AIP Adv. 9, 075324 (2019).
Corresponding Author: Takeshi Kodama
Tel: +81-46-206-0222, E-mail: kodama-takeshi@gen.kanagawa-it.ac.jp- 122 -

1P-79Study of magnetic properties of Er-dimetallofullerene anions
Naoya Fujita1, Aichi Yamashita2, Yoshikazu Mizuguchi2, Koichi Kikuchi1, Yohji Achiba1,
Takeshi Kodama3
1

Department of Chemistry, Tokyo Metropolitan University, Tokyo 192-0397, Japan2
Department of Physics, Tokyo Metropolitan University, Tokyo 192-0397, Japan
3
Center for Basic Education and Integrated Learning, Kanagawa Institute of Technology, Kanagawa
243-0292, JapanEr (Er3+) has emission in the near-infrared region of about 1.5 μm. In the previous
symposium [1], we reported the production and isolation of [Er2@C80(Ih)]- and[Er2@C78(D3h)]-, and the emission from the encapsulated Er3+ at around 1.5 μm.
In addition, Er3+ has a rather large magnetic moment, and its magnetism has also beeninterested. The magnetism of metallofullerenes containing Er was studied for Er@C82 andEr2C2@C82 [2], and it was found that the magnetic behavior changes depending on theencapsulated species. On the other hand, it was reported that [Dy2@C80(Ih)]-, [Dy2@C78(D3h)][3], [Tb2@C80(Ih)]-, and [Tb2@C78(D3h)]- [4] behave as a single molecule magnet. Therefore,
in this work, magnetic properties of [Er2@C80(Ih)]- and [Er2@C78(D3h)]- were investigated.
Fig. 1 shows the results of FC/ZFC measurements by SQUID for [Er2@C80(Ih)]- and[Er2@C78(D3h)]-. In both cases, there was no difference between FC/ZFC curves down to lowtemperature. These are in contrast to [Dy2@C80(Ih)]-, [Dy2@C78(D3h)]-, [Tb2@C80(Ih)]-, and[Tb2@C78(D3h)]-, and it indicates the relaxation times of magnetic moments of [Er2@C80(Ih)]and [Er2@C78(D3h)]- are rather shorter than those of Dy or Tb analogues.
(a)

(b)

Fig. 1 Zero-field cooled (ZFC) and field cooled (FC) magnetization of (a) [Er2@C80(Ih)]- and(b) [Er2@C78(D3h)]- (Field: 0.2 T, Sweep rate: 5 K/min).
[1] S. Nishimoto, et al. The 56th Fullerenes-Nanotubes-Graphene General symposium 98 (2019).
[2] H. Okimoto, et al. J. Phys, Chem C, 112, 6103-6109 (2008).
[3] R. Takai, et al. The 58th Fullerenes-Nanotubes-Graphene General symposium 28 (2020).
[4] K. Yamagishi, et al. The 58th Fullerenes-Nanotubes-Graphene General symposium 120 (2020).
Corresponding Author: Takeshi Kodama
Tel: +81-46-206-0222, E-mail: kodama-takeshi@gen.kanagawa-it.ac.jp- 123 -

1P-80The cage dependence of single molecule magnet properties of
Tb-dimetallofullerene anions: [Tb2@C80(Ih)]− and [Tb2@C78(D3h)]−Kazuki Yamagishi , Aichi Yamashita2, Yoshikazu Mizuguchi2, Ryuji Higashinaka2,
1

Yuji Aoki2, Koichi Kikuchi1, Yohji Achiba1, Takeshi Kodama3

1

Department of Chemistry, Tokyo Metropolitan University, Tokyo 192-0397, Japan2
Department of Physics, Tokyo Metropolitan University, Tokyo 192-0397, Japan
3
Center for Basic Education and Integrated Learning, Kanagawa Institute of Technology,
Kanagawa 243-0292, Japan
Tb-dimetallofullerenes, Tb2@C79N [1] and Tb2@C80(CH2Ph) [2], have been attracting
attention as single molecule magnets (SMMs) containing two lanthanide metal ions in a
fullerene cage. The SMM properties of them originate from the ferromagnetically coupledspin system inside the cage, [Tb3+- e−-Tb3+] and the theoretical calculation [1] suggested thatthe symmetry of the electrostatic field in the fullerene cage affects the SMM properties.
In the previous symposium [3], we reported the synthesis and isolation of [Tb2@C80(Ih)]−and [Tb2@C78(D3h)]−, which have carbon cages with no N-substitution and no additionalgroup, and the measured M-H curves of them exhibited the magnetic hysteresis. In this work,
to investigate SMM properties of them in detail, we measured Field Cooled (FC) / Zero-Field
Cooled (ZFC) curves and the relaxation time  of magnetization.
Fig. 1 and Fig. 2 show FC/ZFC curves of [Tb2@C80(Ih)]− and [Tb2@C78(D3h)]− in the fieldof 0.2 T with a sweep rate 5 K min−1. TB was determined to be 29 K and 10 K, respectively.
TB of [Tb2@C80(Ih)]− is almost identical with those of Tb2@C79N and Tb2@C80(CH2Ph)
although their symmetry of the electrostatic field in the fullerene cage is different. On theother hand, [Tb2@C80(Ih)]− and [Tb2@C78(D3h)]− have rather different TB. The same tendency
was observed for M-H curves [3].

Fig. 1 FC/ZFC curves of [Tb2@C80(Ih)]−.



Fig. 2 FC/ZFC curves of [Tb2@C78(D3h)]−.

[1] G. Velkos, et al. Angew. Chem. Int. Ed. 58, 5891 (2019).
[2] F. Liu, et al. Nature Communications 10, 571 (2019).
[3] K. Yamagishi, et al. The 58th Fullerenes-Nanotubes-Graphene General Symposium 120 (2020).
Corresponding Author: Takeshi Kodama
Tel: +81-46-206-0222
E-mail: kodama-takeshi@gen.kanagawa-it.ac.jp- 124 -

1P-81Modulation of electronic states in two-dimensional semiconductors
by bowl-shaped molecules.
○S. Yotsuya1, A. Fukui1, A. Tsurusaki2, T. Yoshimura1, N. Fujimura1, D. Kiriya1
1

Graduate School of Engineering, Osaka Pref. University, Osaka 591-8531, Japan
2
Graduate School of Science, Osaka Pref. University, Osaka 591-8531, Japan

It is known that the electronic states in two-dimensional semiconducting materials can be
modulated by polar molecules facing on the surface along theout-of-plane direction. It is usually difficult to induce strong
carrier modulation by the effect of the polarization in molecules.
In this study, we examined the modulation of the electronic stateof a two-dimensional semiconducting material, MoS2, by the
1 Chemical structure ofeffect of polarization of dibenzo[b,e]phosphindolizine, bowl- Fig.
dibenzo[b,e]phosphindolizine.
shaped asymmetric molecule (Fig. 1)[1].
In this work, the molecule of
The molecule was deposited on single-layer MoS2 exfoliated E=O is mainly used.
on a 260 nm SiO2 substrate. The Raman and photoluminescence(PL) spectra (Fig. 2) were measured before andafter the deposition of the molecules. The redshift of the out-of-plane vibrational mode (A1g)
in Raman spectrum and the red-shift in the PL
spectrum were observed. These trends in the
spectra suggest an increase of the electron
density in the monolayer MoS2.
From the relationship in energy levels of the
conduction band minimum (CBM) of MoS2 andthe highest occupied molecular orbital (HOMO) Fig.2 (a)Raman spectra and (b) PL spectra of themonolayer MoS2.
of the deposited molecule, surface electron original and molecular treatedRaman shift is about 1 cm-1.
transfer doping would not happen. Therefore,
we believe that the asymmetric molecules would align on MoS2 surface spontaneously, which
induces the modulation of the electronic state in the monolayer MoS2. Furthermore, a clear
negative shift of the threshold voltage on a MOSFET with a single-layer MoS2 was observed
after the molecular treatment (Fig. 3). In the presentation, we
will discuss the details of the mechanism of the doping withthe relationship of the asymmetric structure and polarizationof molecules.
Reference[1] A. Tsurusaki et al., Chem. Commun. 55, 4909-4912 (2019)
Corresponding Author: D. Kiriya
Tel: +81-72-254-9327, Fax: +81-72-254-9327,
E-mail: kiriya@pe.osakafu-u.ac.jp

Fig.3 Transfer characteristics ofthe original and molecular treatedmonolayer MoS2.

- 125 -

1P-82
Diffusion of Oxygen Atom on Single Layer of Graphene Sheet with Atomic
Vacancy V6 for Graphene Oxide as ReRAM devices○Takazumi Kawai1
1 Graduate School of Integrative Science and Engineering, Tokyo City University,

Tokyo 158-8557, Japan

Among various 2D materials graphene oxide attract much attentions due to its fascinating
properties such as a flexibility, easy fabrication, low cost, transparency and so on, especially, asa non-volatile resistive switching random-access-memory (Re-RAM). Basically the mechanism
for the ReRAM device is considered to be breakdown of conducting strips caused by the
diffusion of oxygen atoms on the graphene sheet [1-4].
Here, we consider the global diffusion of oxygen atoms, where the atoms are required todiffuse from one side of graphene sheet to the other side, and go through an atomic vacancy onedges. In this paper, we consider the single atom diffusion through V 6 defect by ab initio
electronic state calculations using the quantum espresso code [5]. Since the V6 defect is large
enough for oxygen atom to diffuse, the diffusion barrier would be similar for that throughgraphene edges.
Optimized path for oxygen diffusion through the V 6 defect is shown in Fig.1(a)-(d) andvariation of total energy Fig.1(e), where we took the total energy of most stable structure as 0
eV. From the graph (Fig.1(e)) we found that the energy of initial structure is higher than that atedge of V6 defect and diffusion barrier is around 0.5 eV, which is much lower than that without
V6 defect. Thus, the oxygen atom is easily trapped by the defect/edge on the graphene.
For the diffusion from the edge of V6 on one side to the other, the diffusion barrier is around
4 eV, where the oxygen atom break into the C-C bond. From the energy variation be-tween
epoxide at the edge (Fig.1(b) to (d)), there is only one peak for the oxygen break into CC-bond.
Then the oxygen atom approach to the V6 defect break into C-C bond without any energy barrier.
However the energy barrier for the diffusion is 4 eV, which indicate that the diffusion rarely
occur under room temperature. At the presentation, we will show the effect of external electricfields by applying the voltage using Effective Screening Medium Method (ESM).
[1] H. Tian, et al., Nano Letters, 14 (2014) 3214.
[2] A. Rani, et al., small, 12 (2016) 6167.
[3] H. Liua, et al., Mater. Today Commun. 25(2020) 101537.
[4] M. Brzhezinskaya, et al., J. Alloys Compd.
849 (2020) 156699.
[5] P. Giannozzi et al., J. Phys.:Condens. Matter
21 395502 (2009); P. Giannozzi et al., J.
Phys.:Condens. Matter 29 465901 (2017); P.
Giannozzi et al., J. Chem. Phys. 152 154105(2020); URL http://www.quantum-espresso.org".
Corresponding Author: T. Kawai,
Tel: +81-3-5707-0104,
E-mail: tkawait@tcu.ac.jp

Fig.1 (a)-(d) Schematic view of graphene sheet with V6 defectterminated by hydrogen atoms and an oxygen atom on theepoxide structure to diffuse. (e) The total energy variation along
the diffusion path (a)-(d).

- 126 -

1P-83Modulation of electronic properties of graphene
by B+ / N+ beam irradiation○Takumi Hidaka1,3, Yasushi Ishiguro2, Kosuke Nakamura1,
Tomoaki Nishimura3, Kazuyuki Takai1,3
1Graduate School of Science and Engineering, Hosei University, Tokyo 184-8584, Japan2

Department of Electrical and Electronic Engineering, Tokyo Denki University,
Tokyo 120-8551, Japan

3

Research Center for Ion Beam Technology, Hosei University, Tokyo 184-8584, Japan

Effects of the environment and the presence of defects / impurities are crucial in theelectronic properties of 2D materials. Especially in graphene, different responses are expected
for introducing of B and N atoms in view of doping and scattering of carriers. In this study, B+
and N+ beams were irradiated into graphene as a quantitative method for introducing impurities,
and their effects on the electron transport were investigated. To distribute B+ and N+ on thegraphene surface, we applied NaCl to a sacrificial layer upon ion beam irradiation [1].
Cr (10 nm) / NaCl (1200, 1000 nm) layers were deposited as sacrificial layer on the graphene
obtained by the cleavage method on SiO2 / Si substrates. The film thickness of the sacrificial
layer was optimized using Monte Carlo simulation for the ion distribution by SRIM2013. B +and N+ irradiation to the sample was performed at an acceleration voltage of 200 keV with adose of 1013 cm-2. The gate voltage dependence of the conductivity is evaluated by using field
effect transistor (FET) of graphene before / after the irradiation.
The charge neutral point of the graphene FET shifted to the positive side in the gate voltage
after B+ irradiation on graphene (Fig.1). On the other hand, the charge neutral point of the FET
shifted to the negative voltage side after N+ irradiation on graphene (Fig.2). These indicate thatthe introduced B+ and N+ cause hole doping and electron doping in graphene, respectively.

Conductivity σ (mS)

Conductivity σ (mS)

1.2

2
After

After

0.6

1
Brfore
0

-60

-30

0

30

Brfore
0

60

-60

-30

0

30

60

Gate voltage Vg (V)Fig.2 Conductivity of graphene
before and after N+ irradiation

Gate voltage Vg (V)Fig.1 Conductivity of graphene
before and after B+ irradiation[1] K. Nakamura et al. FNTG symposium (2018).
Corresponding Author: K. Takai
E-mail: takai@hosei.ac.jp- 127 -

1P-84
Application of the energy exchange eHEX algorithm to thermal transportin 2 layers hBN system in molecular dynamics calculations○Tatiana Zolotoukhina1, Yusuke Michisuji1, Wataru Yuhara1
1

Department of Mechanical Engineering, University of Toyama, Toyama 930-8555, Japan

Interest in the application of layered hexagonal boron nitride (hBN) has recently increased,
due to its superior physicochemical properties compared to that of typical two-dimensional
material. hBN can be utilized in power chips as both an insulating layer as well as a heatspreader for local hotspots with high heat flux [1-3]. The advantage of hBN films and evensingle layers is that they might be integrated into the semiconductor circuitry and be placed
directly on top or below the hotspot without any insulating SiO2 layers. We investigate an
out-of-plane energy transfer channel as it couples to the in-plane transfer, its efficiency as well
as dependence on the sample size. To that end, the 2 layers hBN sample with AA stacking wasused to test the eHEX [4] energy exchange algorithm in molecular dynamics simulation ofheat flow in the 2-layered system.
The hBN layers were of the 1440 x 173.52 Å size with AA stacking and Δz=3.3 Å
distance between layers. We tested the eHEX energy exchange algorithm in application to the
2D structures at conditions of periodic boundary in x & y-direction. Calculations were carriedin LAMMPS. Definition of the cross-sectional area for the flux was taken as 2Δz toaccumulate interlayer distance. The conduction area for flux evaluation was Lx/2 in thex-direction, heating and cooling areas were taken to be 8 Å size in the x-direction. Fluctuationof flux x,y,z components with time (15 ps) was found at the constant heat exchange scheme ofnon-equilibrium eHEX heating. Heat propagation in each direction has a different fluctuation
scale at the same heating time, with the highest frequency of fluctuations in z.
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㼀㼕㼙㼑㻌㼇㼒㼟㼉x

Fig1 Heat flux in hBN 2 layer interacting system (T=300 K, conduction area in x)[1] B. Zhao, B. Guizal, Z. M. Zhang, S. Fan, and M. Antezza, Phys. Rev. B, 95, 245437, (2017).
[2] I. C. Choi, K. Lee, C.-R. Lee, J. S. Lee, S. M. Kim, K.-U. Jeong, and J. S. Kim, ACS Appl. Mater. Interfaces, 11, 20,(2019).

[3] K.-J Tielrooij, N C. H. Hesp, A. Principi., et. al., Nature Nanotechnology, 13, 41–46, (2018).
[4] P.Wirnsberger, D.Frenkel, C. Dellago, J. Chem.Phys., 143, 124104 (2015).
Corresponding Author: T. Zolotoukhina
Tel: +81-76-445-6739, Fax: +81-76-445-6739,

E-mail: zolotu@eng.u-toyama.ac.jp- 128 -

1P-85Aggregates of Elementary Diamond Nanoparticles in Their Aqueous
Colloidal Solutions Induced by Trace Ions
○ Masaya Nemoto1,2, Toshihiko Tanaka1,2, Yasuhiro F. Miura3, Tetsuya Aoyama2,
Kazunori Miyamoto4, Atsuya Muranaka2, Masanobu Uchiyama2,4, Eiji Osawa5
1

Department of Chemistry and Biochemistry, National Institute of Technology,
Fukushima College, 30 Aza-nagao, Tairakamiarakawa, Iwaki, Fukushima, 970-8034, Japan
2
Elements Chemistry Laboratory, RIKEN CPR ,2-1 Hirosawa, Wako, Saitama, Japan
3
Hamamatsu University School of Medicine, 1-20-1 Handayama,
Higashi-ku, Hamamatsu City, Shizuoka, Japan
4
Graduate School of Pharmaceutical Sciences, the University of Tokyo,
7-3-1 Hongo, Bunkyo-ku, Tokyo, Japan
5
Nano Carbon Research Institute Ltd., Asama Research Extension Center,
Shinshu University, 3-15-1 Tokida, Ueda, Nagano, Japan
Elementary diamond nanoparticles (EDIANs)1 are aggregated by trace ions in theiraqueous colloidal solutions and we have to consider that trace carbonate or bicarbonate ionscontaminate pure water and that the ions often make them aggregate when diluting thesolutions with it.2 Taking rich ions of biological organs into account, hence we also have toconsider that they also aggregate through their success of drug delivery systems3. Perhaps theaggregates showed so-called EPR effect,
which should contribute much to thesuccess. We demonstrate here theiraggregates by various kinds of thin saltaqueous solutions in our recent
experiments under nitrogen atmosphere(O2<0.2%). Do the aggregation depend on
ion species?
We
dilutednanodiamond(ND)
solutions  NanoAmando@, NanoCarbon
Research Institute Ltd., containing
EDIANs  from 2.5 to 0.25wt% withvarious thin salt solutions (using ultrapure
water) in the N2 atmosphere. Their particle Figure 1. DLS size measurements of EDIANs’
solutions diluted with water or various aqueous salt
sizes were measured with a DLS, thus solutions shown above. Samples are prepared in theshowing their dependence on salt N2 atmosphere .
concentration (Fig.1). However theirdependence on the species were obscure while Hofmeister-like dependence2,4 was observed
through their sedimentation with ions. The observed aggregation is an early stage of
sedimentation and we consider that different kinds of mechanism take place between ions and
EDIANs in each process. We also will mention reversibility of aggregation: some aggregatedEDIANs can be dispersed again by ultrasonic waves.
[1] A. S. Barnard, E. Osawa; Nanoscale 6, 1188 (2014); [2] Nemoto, et al., FNTG 60th Abstract Book (2021);[3] E.K.Chow, X.-Q. Zhang, M. Chen, R. Lam, E. Robinson, H. Huang, D. Schaffer, E. Osawa, A. Goga, D. Ho,
Sci. Trans. Med., 3, 73 (2011); [4] N.O. Mchedlov-Petrossyan, N. N. Kamneva, A. I. Marynin, A. P. Kryshtal, E.
Osawa, Phys. Chem. Chem. Phys., 17, 16186 (2015).
Corresponding Author:Toshihiko Tanaka / Tel: +81-246-46-0810 / E-mail: ttanaka@fukushima-nct.ac.jp- 129 -

1P-86
Synthesis and properties of fluorescent carbon quantum dots
using lignin○Takaki Yoda1 and Hironori Ogata123
1

Grad. Sch. Sci. and Engin., Hosei Univ.
Dept. Chem. Sci. and Technol., Hosei Univ.
3
Research Center for Micro-Nano Technol., Hosei Univ.
2

Carbon quantum dots (C-QDs) are one of the nanomaterials that have attracted muchattention in recent years. C-QDs have many advantages over conventional semiconductor
quantum dots and organic dyes, including chemical stability, dispersibility, fluorescence
properties, hydrophilicity, and high resistance to photodegradation [1]. Currently, there are twomain synthesis approaches for the preparation of C-QDs; "top-down" and "bottom-up"
approaches. In the top-down approach, large carbon materials are decomposed by arc discharge,
laser ablation, or chemical oxidation [2]. On the other hand, the bottom-up approach is synthesis
ofC-QDs create carbon molecules via precursors such as the hydrothermal method [3],pyrolysis method, and the microwaves method [4]. These methods have been reported to havecomplicated procedures, relatively large particle sizes (30-50 nm), and low quantum yields offluorescence.
In recent years, biomass has been attracting attention as a material for C-QDs. In particular,
synthesis of C-QDs have been reported from groceries such as soymilk [5] and plant seeds [6]et al. They use a simple heating process and can be synthesized at low cost. We clarified that
C-QDs can be synthesized from lignin by pyrolysis. In this study, we investigated the structure
and optical properties of C-QDs synthesized from lignin, and their differences from C-QDs
synthesized by other methods.
Figure 1 shows a TEM image of C-QD synthesized from lignin.
Detailed results will be reported at the meeting.

Fig.1 TEM images of Lignin C-QDs.
References:[1] Wang,Y. et al., J.Mater.Chem.C. 2,6921(2014).
[2] Zhao,Q.L. et al., Chem.C. 41,5116(2008).
[3] Pan,D. et al., Adv.Mater. 22,6,734(2010).
[4] Liu,R. et al., J.Am.Chem.Soc. ,133,39,15221(2011).
[5] Chengzhou,Z. et al., Chem.C. 48,9367(2012).
[6] Akansha,D. et al., Sci.Rep. ,9,14004(2019).
Corresponding Author: H.Ogata
Tel: +81-42-387-6229, Fax: +81-42-387-6229,
E-mail: hogata@hosei.ac.jp- 130 -

1P-87
Synthesis of Boron Nitride Nanotubes
Using Mist of Boric Acid Aqueous Solution as a Low-Cost Boron Source○Sota Ebisu1, Tetsuro Sawada1, Toshio Osawa1, Hisashi Sugime2, Suguru Noda1,2*
1

Department of Applied Chemistry, 2 Waseda Research Institute for Science and Engineering,
Waseda University, Tokyo 169-8555, Japan.

Boron nitride nanotubes (BNNTs) are mechanically, thermally, and chemically stablesimilarly to carbon nanotubes (CNTs) and optically transparent and electrically insulative
oppositely to CNTs, thus have rich opportunities for application including glass composites [1]and battery separators [2]. BNNTs, produced from solid boron or h-BN powder as boron source,
are now commercially available from start-up companies. Temperatures as high as several
thousand degree C are needed to yield vapors from these solid sources [3], resulting in the
BNNTs as expensive as a few hundred USD per gram. Moreover, the BNNTs contain boron
and/or h-BN particles at high content. BNNTs can also be synthesized via chemical vapor
deposition (CVD). The process temperature is as low as 1000–1400 qC or less, thus low costproduction can be expected. Ammonia can be used as a gaseous nitrogen source. But expensive
boron sources such as borazine or solid sources such as boron oxide are used by now. Finding
low-cost and safe boron-containing compound for gaseous boron source is a key issue.
We have reported boric acid, which is widely used for disinfectants, as a low-costboron source, and realized the BNNT synthesis by feeding its vapor via sublimation [4]. But
the sublimation was unstable due to the sintering and dehydration of the boric acid powder. In
this work, we studied another method that uses mist of the boric acid aqueous solution.
BNNT synthesis was examined using Fe/graphite combinatorial catalyst library as
shown in Fig. 1. Graphite was selected as the substrate because it does not react with Fe at hightemperature. Fe was sputter-deposited onto graphite with a thickness gradient of 0.49–3.2 nm
using a physical filter. BNNTs were synthesized on the Fe/graphite substrate in a quartz glass
tube reactor for 10 min by feeding NH3/Ar gas and mist of boric acid aqueous solution using
an ultrasonic nebulizer. Scanning electron microscope (SEM) images show the formation of
nanotubes on the substrates (Fig. 1). With decreasing Fe thickness, nanotubes decreased theyield and got more straight.

Fig. 1. Plan-view SEM images of BNNTs grown on Fe/graphite substrate with various Fe thicknesses.
[1] N.P. Bansal, et al., J. Am. Ceram. Soc., 89, 1 (2006).
[2] K., Kentaro, et al., Carbon, 167, 596 (2020).
[3] M.W. Smith, et al., Nanotechnology, 20, 50 (2009).
[4] T. Sawada, et al., The 58th FNTG General Symposium, 2P-23 (2020).
Corresponding Author: S. Noda, Tel: 03-5286-2769, E-mail: noda@waseda.jp- 131 -

発表者索引
Author Index

Author index
Author indexAA
Abe, Ryo

Abe, Yuho
Ryo
Achiba,
Yohji
Abe,
Yuho
Adachi, Yohji
YusukeAchiba,Ago, Hiroki
Adachi,
YusukeAhmad,
Saeed
Ago,
Hiroki
Akita, Seiji
Ahmad,
Saeed
Anisimov,
Akita,
SeijiAnton
Aoki, Haruka
Anisimov,Anton
Aoki, Yuji
HarukaAoyama,Aoki,
YujiTetsuya
Araki, Tsutomu
Aoyama,Tetsuya
Araki, Yuji
TsutomuArie, Takayuki
Araki,
Yuji
Arifuku,Michiharu
Arie,
Takayuki
Arifuku, Michiharu

3-7*1P-12
3-7
1P-78, 1P-79, 1P-80*1P-12*3-17 1P-79, 1P-80
1P-78,
1P-39, 1P-65, 1P-72*3-17
1P-46 1P-65, 1P-72
1P-39,
1P-25, 3-17
1P-46
1P-61 3-17
1P-25,
1P-73
1P-61
1P-80
1P-73
1P-85
1P-80
1P-27
1P-85
*1P-39
1P-27
1P-25, 3-17
*1P-39
1P-14 3-17
1P-25,
1P-14

Bets, Ksenia
Barnard,
AmandaBianco,AlbertoBets,
KseniaBichara,Alberto
Christophe
Bianco,Bichara, Christophe

3-10
1P-58
3-10
2-2
1P-58
*2S-7
2-2
*2S-7

B
B
Barnard, AmandaCC
Chae, Sangwoo

FF
F. miura, Yasuhiro

Chou, Yungkai
Chou, Yungkai
Date,Wanyu
Hiroki
Dai,
Datta,Hiroki
SukantaDate,Ding, Er-xiong
Datta,
SukantaDoi, Juntaro
Ding,
Er-xiong
Doi, Juntaro*2-7*1P-62*2-7
1P-46*1P-62
1P-46
1P-27
1P-46
1P-27

D
D
Dai, Wanyu

E
E
Ebisu, Sota

Eda, Junko
Ebisu,
Sota
Endo,Junko
TakahikoEda,
Endo, TakahikoGao, Yanlin
Weilu
Goto,Yanlin
ChihiroGao,
Masahiro
Goto, Chihiro
Goto, Taishi
Masahiro
Gupta,Taishi
NitantGoto,
Gupta, Nitant

3-8
1P-22, 3-12, 3-18
3-8
1P-68 3-12, 3-18
1P-22,
1P-59
1P-68*1P-21
1P-59
1P-58*1P-21
1P-58

Hamasaki,
HiromuHabara,Ren
Hamasuna,Hiromu
Aoi
Hamasaki,Han, Jiye Aoi
Hamasuna,
Harano,Han,
JiyeKojiHashimoto,
Harano,KojiKazuki
SatoruHashimoto, Kazuki
Hashimoto, Takeshi
SatoruHata, Kenji Takeshi
Hashimoto,Hata, KenjiHata, Yoshito
Hatanaka,
Miho
Hata,
YoshitoHatta, Akimitsu
Hatanaka,
Miho
Hayamizu,
Yuhei
Hatta,
Akimitsu
Hayashi, Kenjiro
Hayamizu,
YuheiHe, Xing Kenjiro
Hayashi,
Hidaka,He,
XingTakumi
Higashinaka,
Ryuji
Hidaka,Takumi
Higashinaka, Ryuji*1P-63*1P-35*1P-63*1P-5*1P-35
1P-46, 3-5*1P-5*3-11 3-5
1P-46,*1P-37*3-11
1P-40*1P-37
1P-40
1P-4, 1P-15, 1P-19,
1P-40
1P-76,1P-15,
2-5 1P-19,
1P-4,*1P-25
1P-76, 2-5
1P-50*1P-25
1P-69
1P-50
1P-36, 2-3
1P-69
3-19 2-3
1P-36,*1P-533-19*1P-83
*1P-53
1P-80*1P-83
1P-80

GGGao, Weilu

2-1*1P-15, 1P-76, 2-5
2-1
1P-2, 1P-13,
1P-42,*1P-15,
1P-76,
2-5
1P-47,1P-13,
1P-58,
1P-61,
1P-2,
1P-42,
1P-62,
1P-77,
2-7
1P-47, 1P-58, 1P-61,
1P-45 1P-77, 2-7
1P-62,
1P-45

Chen, Sangwoo
Guohai
Chae,
Chiashi,
ShoheiChen,
Guohai
Chiashi, Shohei

Fang,
NanYasuhiroF.
miura,
Feng, Ya
Fang,
Nan
Fujigaya,Feng,
Ya Tsuyohiko
Fujigaya, Tsuyohiko
Fujii, Takenori
Fujii, Yasuhiro
Takenori
Fujimura,
Norifumi
Fujii,
Yasuhiro
Fujita, Naoya
Fujimura,
Norifumi
Fukui, Akito
Fujita,Naoya
Fukunishi,
Yasuhiro
Fukui,
Akito
Fukushima,Yasuhiro
Tomohiro
Fukunishi,
Fukuura, Shuta
Fukushima,
Tomohiro
Furuta, Hiroshi
Fukuura,Shuta
Futaba, Hiroshi
Don
Furuta,Futaba, Don n.
Futaba, Don n.

1P-85
3S-1
1P-85
1P-13
3S-1
1P-5, 1P-11, 1P-32,
1P-13
1P-59,
1P-73,1P-32,*2I-3
1P-5, 1P-11,
1P-62
1P-59, 1P-73, *2I-3
1P-24
1P-62
1P-81
1P-24
*1P-79
1P-81
1P-81*1P-793-20
1P-81*1P-543-20*1P-43
*1P-54*1P-69
*1P-43
1P-19, 1P-76, 2-5*1P-69
1P-15 1P-76, 2-5
1P-19,
1P-15*1P-87
1P-72*1P-87
1P-9, 1P-10, 1P-29,
1P-72
1P-37,1P-10,
1P-38,
1P-56,
1P-9,
1P-29,
1P-64,
1P-37, 3-13
1P-38, 1P-56,
1P-64, 3-13

H
H
Habara, Ren- 133 - 133 -Higuchi, Naoto
Hirahara,Naoto
Kaori
Higuchi,
Hirano, Atsushi
Hirahara,
Kaori
Hirotani,Atsushi
Jun
Hirano,Hisama, Kaoru
Hirotani,
Jun
Hisama, Kaoru
Homma, Chishu
Honda, Shimon
Homma,
ChishuHonma,Shimon
ChishuHonda,
Hori, Keisuke
Honma,
ChishuHoriuchi,KanakoHori,
Keisuke
Hoshino, Shintaro
Horiuchi,KanakoHosokawa,
Yuuya
Hoshino,Shintaro
Hussain, Aqeel
Hosokawa,
Yuuya
Huyghebaert,
Hussain,
AqeelCedricHuyghebaert, CedricI
IIbi, Takayuki

1P-3
1P-35
1P-3
*1P-20
1P-35
3-6*1P-20
1P-47, *1P-58, 1P-61,
3-6
*3-12
1P-47, *1P-58, 1P-61,
*2-3
*3-12
1P-69
*2-3
1P-36
1P-69
1P-30
1P-36
3-8
1P-30
1P-68
3-8
*1P-60
1P-68
1P-46*1P-60
*2S-5
1P-46
*2S-5

Inoue, Yoku
Ishiguro,
YasushiInoue,
Yoku
Ishikawa,Yasushi
Soma
Ishiguro,
Ishimaru, Ryoya
Ishikawa,
Soma
Islam, Md.Ryoya
saifulIshimaru,
Itahashi,
Yuki
Islam,
Md.
saiful
Iwasa, Yoshihiro
Itahashi,
Yuki
Iwasa, Yoshihiro

1P-33*1P-66
1P-33*1P-17, 1P-18, 3-8, 3-9*1P-66
1P-68 1P-18, 3-8, 3-9*1P-17,
*2S-1
1P-68
1P-61
*2S-1
*1P-3
1P-61
1P-21
*1P-3
1P-2, 1P-14, 1P-42,
1P-21*1P-45,
1P-55,
1P-61,
1P-2,
1P-14,
1P-42,
1P-62,
1P-77*1P-45, 1P-55, 1P-61,
1P-44, 1P-77
1P-70
1P-62,
1P-83 1P-70
1P-44,
1P-40, 2-1
1P-83*1P-772-1
1P-40,
1P-69*1P-77*1P-68
1P-69
1P-68*1P-68
1P-68

Sugyeong
Jeon, Il
Jiang,Sugyeong
Hua
Jeon,
Jiang, Hua

1P-46, 1P-49, 3-4, 3-5
1P-48 1P-49, 3-4, 3-5
1P-46,
1P-46
1P-48
1P-46

Kameda,Tomoshi
Kaida,
Takazumi
Kaneko, Kentaro
Kameda,Tomoshi
Kaneko, Takuhei
KentaroToshiroKaneko, Takuhei
Karasawa,
Shusaku
Kaneko,ToshiroKashio, Tatsuya
Karasawa,
Shusaku
Kataoka,Tatsuya
MasakoKashio,Kataoka, Masako*1P-28
1P-20*1P-28*1P-30
1P-20
2-1*1P-30
1P-53, 3-16
2-1
*1P-343-16
1P-53,
3-20*1P-34
3-19
3-20
3-19

Ichinose,
Nanami
Ibi,
TakayukiIchinose, Yota
NanamiIdeue, Toshiya
Ichinose,
Yota
Iijima, Toshiya
Sumio
Ideue,
Ikuhara,Sumio
Yuichi
Iijima,Imafuku,Yuichi
RyoheiIkuhara,Inao, Ryota
Imafuku,
Ryohei
Inoue,Ryota
Taiki
Inao,
Inoue, Taiki

J
JJeon, IlK
K
Kaida, Takazumi

Kataura, Hiromichi
Kataura, Hiromichi
Katayama, Mitsuhiro
Kato, Masakiyo
Katayama,
Mitsuhiro
Kato, Toshiaki
Masakiyo
Kato, Yuichiro
Toshiaki k.
Kauppinen,
Esko
Kato,
Yuichirok.
Kauppinen, Esko i
Kauppinen, Esko ii.
Kawabe, Rintaro
Kauppinen,
Esko i.
Kawahara,
Kenji
Kawabe,RintaroKawai, Hideki
Kawahara,
Kenji
Kawai, Takazumi
HidekiKawano,Takazumi
Yukio
Kawai,
Kawase, Takumi
Kawano,Yukio
Kawase, Yuta
TakumiKhan, Taher
Kawase,Yuta
Kikkawa,
Masahide
Khan,
Taher
Kikuchi, Iori
Kikkawa,
Masahide
Kikuchi, Koichi
IoriKim, Jaeho
Kikuchi,
Koichi
Kiriya,Daisuke
Kim,
Jaeho
Kitabatake,
Daiki
Kiriya,Daisuke
Kitada, Takahito
Kitabatake,
Daiki
Kitaura,Takahito
Ryo
Kitada,Kitaura, Ryo
Kiyoyanagi, Noriko
Ko, Jeong won
Kiyoyanagi,
NorikoKo, Weon
Jeong baewon
Kobashi,
Ko,
WeonKazufumi
bae
Kobayashi,
MasayaKobashi,Kazufumi
Mikio
Kobayashi, Masaya
Kobayashi, Yoshihiro
Mikio
Kodama, Takeshi
Kobayashi,
Yoshihiro
Kodama, Takeshi
Koga, Naoki
Kogure,
Shugo
Koga,
Naoki
Kohata, Ikuma
Kogure,
Shugo
Komai, Takaha
Kohata,Ikuma
Komatsu,
NatsumiKomai,
TakahaKondo, Daiyu
Komatsu,
NatsumiShu
Kondo, Daiyu
Kono, Junichiro
Kondo,
Shu
Kono, Yuga
Junichiro
Koreeda,Akitoshi
Kono,
Yuga
Kubo, Osamu
Koreeda,Akitoshi
Kumamoto,
AkihitoKubo,
Osamu
Kumari, Nikita
Kumamoto,
AkihitoKuwahara,
Shota
Kumari,
NikitaKuwahara, Yuki
Shota
Kuwahara, Yuki

- 134 - 134 -1P-20, 1P-41, 1P-71,
2-4
1P-20,
1P-41, 1P-71,
1P-21
2-4
1P-45
1P-21
1P-53, 3-16
1P-45
3S-1 3-16
1P-53,
1P-62
3S-1
1P-13
1P-62
1P-46, 1P-61, 3-5
1P-13
1P-33 1P-61, 3-5
1P-46,
1P-39, 1P-72
1P-33
3-8
1P-39,
1P-72*1P-823-8
1P-31*1P-82
1P-35
1P-31
1P-27
1P-35
1P-46
1P-27
3-11
1P-46
*1P-10
3-11
1P-78,*1P-101P-79, 1P-80
1P-15, 1P-79,
1P-76, 1P-80
2-5
1P-78,
1P-81 1P-76, 2-5
1P-15,
1P-49
1P-81
3-16
1P-49
1P-2, 1P-66, 1P-67,
3-16
3-12 1P-66, 1P-67,
1P-2,
1P-14
3-12
1P-48
1P-14
1P-48
1P-19, 1P-76
1P-48
2-6
1P-19,
1P-76
*1P-9
2-6
1P-14, 1P-45, 1P-55*1P-9
1P-50, 1P-45,
1P-78, 1P-55
1P-79,
1P-14,
1P-80 1P-78, 1P-79,
1P-50,*1P-16
1P-80*1P-41*1P-16*1P-47*1P-41
1P-54*1P-47
3-8
1P-54
*3-19
3-8
*1P-74, 1P-75
*3-19
3-8
*1P-74,
1P-75*1P-443-8
1P-24*1P-44
1P-21
1P-24
1P-61
1P-21
*3-7
1P-61
*3-1
*3-7
3-1
*3-1
3-1

L
L
Lee, Sangsu

Li, Kou
Lee,
SangsuLiao,
Yong-pingLi,
Kou
Lim, Hongen
Liao,Yong-pingLim, Hong en
Lin, Dewu
Hao-sheng
Lin, Dewu
Liu, Hao-sheng
Chao
Lin,
Ming
Liu, Chao
Zheng
Liu, Ming
Liu, Zheng

M
M
Ma, Yue

Maeda,
Ma,
YueYutaka
Maejima,
Moeno
Maeda,
YutakaMaki, Hideyuki
Maejima,
Moeno
Maruyama,
Mina
Maki,
HideyukiMaruyama, Mina
Maruyama, Shigeo
Maruyama, Shigeo
Maruyama, Takahiro
Maruyama, Takahiro
Matsubara, Manaho
Matsuda, Kazunari
Matsubara,
ManahoMatsui, Keisuke
Matsuda,Kazunari
Matsunaga,
Masahiro
Matsui,
KeisukeMatsuo, Yutaka
Matsunaga,
Masahiro
Matsuoka,
Yuya
Matsuo,YutakaMatsushima,
Kenta
Matsuoka,
Yuya
Matsushita, Satoru
Matsushima,
Kenta
Matsuura, Yuuma
Matsushita,
SatoruMichisuji, Yuuma
YusukeMatsuura,
Misaizu, Fuminori
Michisuji,
YusukeMita, Kazuki
Misaizu,
Fuminori
Miyamoto,
Kazunori
Mita,
Kazuki
Miyata, Daisuke
Miyamoto,
Kazunori
Miyata, Yasumitsu
Daisuke
Miyata, Yasumitsu
Miyauchi, Yuhei
Mizuguchi,Yuhei
Yoshikazu
Miyauchi,Mizuno, RyoYoshikazu
Mizuguchi,
Mohammad,Mizuno,Ryo Tavakkoli
Mouri, Shinichiro
Mohammad,Tavakkoli
Murahashi,TomoakiMouri,
Shinichiro
Murakoshi, Tomoaki
Kei
Murahashi,
Murakoshi, Kei*3-5*1P-31*3-5
1P-46*1P-31
1P-10, 1P-29, 1P-37,
1P-46
1P-56,
1P-10, 1P-67,
1P-29, 3-13
1P-37,*1P-191P-67, 3-13
1P-56,
1P-40, 1P-49, 2-1*1P-19
3-11 1P-49, 2-1
1P-40,
1P-13
3-11
1P-29, 1P-56
1P-13
1P-29, 1P-56

Muranaka, Atsuya
Murera, Diane
Muranaka,
AtsuyaMuroga,Diane
Shun
Murera,Muto, Nobuhiro
Muroga,Shun
Muto, Nobuhiro

1P-85
2-2
1P-85
*1P-4
2-2
*1P-18, 3-9*1P-4*1P-18, 3-9

Nagai, Yukiko
Kohei
Nagano,Mai
Nagai,
YukikoNagashio,Mai
KosukeNagano,Naka, Sadahito
Nagashio,
KosukeNakagawa,
Kenta
Naka,
Sadahito
Nakajima, Haruna
Nakagawa,
Kenta
Nakamura,Haruna
Eiichi
Nakajima,
Kenta
Nakamura, Eiichi
KosukeNakamura, Kenta
Masakazu
Nakamura, Kosuke
Nakanishi, Yusuke
Nakamura,
Masakazu
Nakanishi, Yusuke
Nakano, Takayuki
Nakashima,
Asato
Nakano,TakayukiNam, Jeong-seokNakashima,
Asato
Namiki,
Hiromasa
Nam,
Jeong-seok
Naritsuka,
ShigeyaNamiki,
Hiromasa
Narituka, Shigeya
Naritsuka,
Shigeya
Negishi, Royta
Narituka,
Shigeya
Nema, Hirofumi
Negishi,Royta
Nemoto,MasayaNema,
Hirofumi
Niidome,Masaya
Yoshiaki
Nemoto,Niiyama, Hiroto
Niidome,
YoshiakiNishidome,
Hiroyuki
Niiyama,
HirotoNishihara, Taishi
Nishidome,
Hiroyuki
Nishikiori, Taishi
Yuichi
Nishihara,
Nishimura, Yuichi
TomoakiNishikiori,
Nishina,
Yuta
Nishimura, Tomoaki
Noda, Suguru
Nishina,Yuta
Noda, Suguru
Nonoguchi, Yoshiyuki
Numata, Shunsuke
Nonoguchi,
Yoshiyuki
Numata, Shunsuke

1P-72*1P-11
1P-72
1P-57*1P-11
1P-67
1P-57*1P-32
1P-67
1P-3, 1P-33*1P-32*1P-21P-33
1P-3,
3-11
*1P-2
1P-11
3-11
1P-83
1P-11
3-7
1P-83
1P-10, 1P-29, 1P-37,
3-7
1P-56,
1P-10, 1P-67
1P-29, 1P-37,
1P-44, 1P-67
1P-70
1P-56,
3-20 1P-70
1P-44,
1P-46, 3-4, 3-5
3-20
1P-68 3-4, 3-5
1P-46,
1P-34, 1P-74, *3-20
1P-68
1P-75 1P-74, *3-20
1P-34,
1P-55
1P-75*1P-24
1P-55
1P-85*1P-24*1P-59
1P-85
1P-3*1P-59
*1P-72, 3-8
1P-3
1P-23, 1P-71*1P-72,
3-8
1P-1 1P-71
1P-23,
1P-83
1P-1
2-2,
3-14
1P-83
1P-1,3-14
1P-28, 1P-30,
2-2,
1P-87,*2I-2 1P-30,
1P-1, 1P-28,
1P-67
1P-87, *2I-2*1P-52
1P-67*1P-52

Ogata,Hayato
Hironori
Ochi,
Ogura, Hironori
HirotoOgata,
Ogura, Tomohiro
HirotoOhno, Jun
Ogura,Tomohiro
Ohno, Yutaka
Jun
Oishi, Eiichi
Ohno,
YutakaOkada,Eiichi
RyotaroOishi,
Okada, Ryotaro

1P-1
1P-12, 1P-52, 1P-86
1P-1*1P-671P-52, 1P-86
1P-12,
1P-38*1P-67
1P-11
1P-38
1P-41, 3-6
1P-11
1P-24 3-6
1P-41,
3-8
1P-24
3-8

N
N
Nagai, Kohei

1P-49
1P-33
1P-49
*1P-78
1P-33
1P-3, 1P-33*1P-78
1P-7, 1P-33
1P-22, 3-12, 3-15,
1P-3,
3-18 1P-22, 3-12, 3-15,
1P-7,
1P-2, 1P-13, 1P-42,
3-18
1P-46,1P-13,
1P-47,1P-42,
1P-49,
1P-2,
1P-58,
1P-46, 1P-61,
1P-47, 1P-62,
1P-49,
1P-77,*2S-4,
2-7,
3-4
1P-58, 1P-61, 1P-62,
1P-34, 1P-74,
1P-75,
1P-77,*2S-4, 2-7,
3-4
2-6,
3-20
1P-34, 1P-74, 1P-75,
1P-17
2-6,
3-20
1P-9, 1P-23, 1P-71, 3-3
1P-17*1P-61P-23, 1P-71, 3-3
1P-9,
*3-6
*1P-6
1P-40, 1P-49, 2-1, 3-4*3-6
1P-18, 1P-49,
3-9
1P-40,
2-1, 3-4
1P-27 3-9
1P-18,
1P-42
1P-27
1P-16
1P-42
1P-84
1P-16
1P-49
1P-84
3-20
1P-49
1P-85
3-20
*1P-40
1P-85
1P-9, 1P-10, 1P-29,*1P-40
1P-37,
1P-38,1P-29,
1P-56,
1P-9, 1P-10,
1P-57,
1P-64, 1P-56,
1P-67,
1P-37, 1P-38,
3-13 1P-64, 1P-67,
1P-57,
1P-23, 1P-71, 3-3
3-13
1P-79, 1P-71,
1P-80 3-3
1P-23,
1P-41 1P-80
1P-79,
1P-46
1P-41
1P-27
1P-46
3-20
1P-27
1P-54
3-20
1P-54

O
O
Ochi, Hayato- 135 - 135 -Okada, Susumu
Okada, Susumu
Okamoto, Naofumi
Okazaki, Toshiya
Okamoto,Naofumi
Okubo, Hitomi
Okazaki,Toshiya
Osawa, Eiji
Okubo,
Hitomi
Osawa, Toshio
Eiji
Otsuka, Toshio
Keigo
Osawa,
Otsuka, Keigo
Otuka, Tomohiro
Oya, Shuma
Otuka,Tomohiro
Ozawa,
MasakiOya,
Shuma
Ozawa, Masaki

P
P
Pandey, Manish

Park, Se Manish
hwan
Pandey,Peng, Se
BohwanPark,
Lian-maoPeng, Bo
Prassides,
KosmasPeng,
Lian-mao
Pu, Jiang Kosmas
Prassides,
Pu, Jiang

R
R
Rahman, Md. ashiqur

1P-7, *1P-22, 3-12,
3-15, *3-18
1P-7,*1P-22, 3-12,
3-7
3-15, *3-18
1P-4
3-7
1P-72
1P-4
1P-85, *3-10
1P-72
1P-28, *3-10
1P-87
1P-85,
1P-13, 1P-87
1P-42, 1P-47,
1P-28,
1P-58, 1P-42,
1P-61, 1P-47,
1P-77,
1P-13,
2-7,
3S-1
1P-58, 1P-61, 1P-77,
3-163S-1
2-7,*1P-333-16
1P-16*1P-33
1P-16
3-7
1P-48
3-7
1P-46
1P-48
2S-2
1P-46
1P-6
2S-2
1P-10, 1P-38, 1P-56,
1P-6
1P-64 1P-38, 1P-56,
1P-10,
1P-64

Ravat, Prince
Rahman,Md. ashiqur
Reina, Prince
Giacomo
Ravat,
Ruiz, Amalia
Reina,
GiacomoRuiz, Amalia

1P-57
3-11
1P-57
*2-2
3-11
2-2
*2-2
2-2

Saito, Nagahiro
Saida,
Takahiro
Saito, Riichiro
Nagahiro
Shigeki
Saito, Riichiro
Shogo
Saito, Shigeki
Saito, Takeshi
Shogo
Saito, Yahachi
Takeshi
Sakakita,
HajimeSaito,
Yahachi
Sakano, Masato
Sakakita,
HajimeSakurai, Masato
Shunsuke
Sakano,Sasagawa,
Takao
Sakurai,Shunsuke
Satake, Masamitsu
Sasagawa,
Takao
Sato, Naofumi
Satake,Masamitsu
Shintaro
Sato, Naofumi
ShuSato, Shintaro
Sato, Yuta
Shu
Sawada,Sato,
YutaTetsuro
Segawa, Yasumoto
Sawada,TetsuroSekine, Ryosuke
Segawa,Yasumoto
Seo, Mizuki
Sekine,RyosukeSeo, Mizuki

1P-34, 1P-74, 1P-75
2-1
1P-34,
1P-74, 1P-75
1P-26, 1P-51, *2S-3
2-1
1P-17 1P-51, *2S-3
1P-26,
1P-24
1P-17
3-1
1P-24
*3-14
3-1
1P-15, 1P-76, 2-5*3-14*3S-2 1P-76, 2-5
1P-15,
1P-15, 1P-76, *2-5
*3S-2
1P-68, 1P-76,*3S-3 *2-5
1P-15,
1P-14 *3S-3
1P-68,
*3-16
1P-14
3-19
*3-16
1P-42
3-19
1P-61
1P-42
1P-87
1P-61
1P-23
1P-87
3-11
1P-23
3-16
3-11
3-16

S
S
Saida, TakahiroSeo, Seungju
Sharma,Kamal
Seo,
Seungju
Sharma, Kamal prasad
Shawky, Kamal
Ahmedprasad
Sharma,Shimizu,Ahmed
Hiroshi
Shawky,Shimizu, Shun
Hiroshi
Shimizu, Yoshiki
Shun
Shimura, Yoshiki
Eriko
Shimizu,
Shinokita,Eriko
Keisuke
Shimura,Shiraki, Tomohiro
Shinokita,
Keisuke
Shiromaru,
Haruo
Shiraki,Tomohiro
Solís-fernández,
Shiromaru,
HaruoPablo
Suenaga, Kazu Pablo
Solís-fernández,
Sugai, Toshiki
Suenaga,
Kazu
Sugihara,
Taiki
Sugai,
ToshikiSugime, Hisashi
Sugihara,
Taiki
Sugizaki,Hisashi
YoshiakiSugime,Suzuki, Daichi
Sugizaki,
YoshiakiSoma
Suzuki, Daichi
Suzuki, Soma

T
T
Tabata, Hiroshi

3-4
1P-34, 1P-74, 1P-75
3-4
2-6
1P-34,
1P-74, 1P-75
3-4
2-6
1P-10, *1P-29, 1P-56
3-4*1P-36*1P-29, 1P-56
1P-10,
1P-15, 1P-76, 2-5*1P-363-1
1P-15,
1P-76, 2-5
1P-9, *3-3
3-1
1P-32,*3-3
1P-59, *1P-73
1P-9,
1P-78 1P-59, *1P-73
1P-32,
1P-39, 1P-65
1P-78
1P-61 1P-65
1P-39,
3-1
1P-61*1P-423-1
1P-1, 1P-28, 1P-87*1P-42
1P-36,1P-28,
2-3 1P-87
1P-1,*3-2 2-3
1P-36,*1P-38*3-2*1P-38

1P-21
Kento
1P-44
Tabata, Hiroshi
1P-21
Takahashi,
Hiromu1P-28
Tabata,Kento
1P-44
Takai, Kazuyuki
1P-83
Takahashi,
Hiromu
1P-28
Takaki,Kazuyuki
Hiroshi
1P-33
Takai,
1P-83
Takakura,
Akira
1P-23, 1P-71
Takaki,
Hiroshi
1P-33
Takamura,Akira
Makoto1P-55 1P-71
Takakura,
1P-23,
Takei, Kuniharu
1P-25, 3-17
Takamura,
Makoto1P-55
Takenobu,
Taishi
1P-10, 3-17
1P-38, 1P-56,
Takei,
Kuniharu
1P-25,
1P-64 1P-38, 1P-56,
Takenobu, Taishi
1P-10,
Tanaka, Kenya*1P-23
1P-64
Koichiro
1P-72
Tanaka, Kenya*1P-23
Kosuke*1P-70
Tanaka, Koichiro
1P-72
Tanaka, Naoki
1P-5
Kosuke*1P-70
Ryoga
1P-57
Tanaka, Naoki
1P-5
1P-20, 1P-71, 2-4, *2I-1
Tanaka, Takeshi
Ryoga
1P-57
Tomomi3-1
Tanaka, Takeshi
1P-20,
1P-71, 2-4, *2I-1
Toshihiko
1P-85, 3-10
Tanaka, Tomomi
3-1Tang, Daiming
1P-61 3-10
Tanaka,Toshihiko
1P-85,
Taniguchi,
Takashi
1P-2, 1P-66, 3-3, 3S-1
Tang,
Daiming1P-61
Taniyasu, Yoshitaka
1P-551P-66, 3-3, 3S-1
Taniguchi,
Takashi
1P-2,
Terasaki, Nao
3-2
Taniyasu,
Yoshitaka
1P-55
Thanh cuong,
3-18
Terasaki,
Nao Nguyene 3-2
Tian, Yuan
*1P-26, 1P-51
Thanhcuong, Nguyene 3-18
Togo,
Takahashi*1P-64 1P-51
Tian, Yuan
*1P-26,Toko, Takahashi
Kaoru
*2S-6
Togo,
*1P-64
Tomizawa,
1P-36, 2-3
Toko,
KaoruHideyuki*2S-6
Tsuji, Takashi
1P-15, 2-3*1P-76, 2-5
Tomizawa,
Hideyuki
1P-36,
Tsurusaki,
Akihiro1P-81 *1P-76, 2-5
Tsuji,
Takashi
1P-15,
Tsurusaki, Akihiro
1P-81- 136 - 136 -Tsuzuki, Mayumi
Tsuzuki, Mayumi

2-4
2-4

Uchiyama,
Masanobu
Uchida,Kento
Ueji, Kan Masanobu
Uchiyama,
Ueji, KanUeno, Hiroshi
Keiji
Ueno, Hiroshi
Ukhtary,
M. shoufie
Ueno,
Keiji
Muhammad
Ukhtary, M.
shoufieshoufie
Ukhtary, Muhammad
Usami, Rei
shoufie
Usami, Rei

1P-72
1P-85
1P-72
1P-17, 1P-18, 3-8, *3-9,
1P-85
3-13
1P-17, 1P-18, 3-8, *3-9,
1P-49
3-13
1P-2
1P-49
1P-26
1P-2
1P-51
1P-26
1P-51
*1P-8
*1P-8

U
U
Uchida, Kento

W
W
Wada, Momoyo

1P-20
Naoki
1P-9
Wada, Momoyo
1P-20
Wakabayashi,
1P-63
Wada,
Naoki Katsunori 1P-9
Rie
1P-59
Wakabayashi, Katsunori
1P-63*1P-50, 1P-78
Wakabayashi, Tomonari
Rie
1P-59
Wakebe, Kazuki
1P-50 1P-78
Wakabayashi,
Tomonari *1P-50,
Wang, Mengyue*1P-14
Wakebe,Kazuki
1P-50
Shuhui*1P-13
Wang, Mengyue*1P-14
Watanabe,Kenji
1P-2, 1P-66, 3-3, 3S-1
Wang,Shuhui*1P-13Wei, Nan Kenji
1P-461P-66, 3-3, 3S-1
Watanabe,
1P-2,
Wu, Hengkai*1P-71
Wei,
Nan
1P-46
Wu, Hengkai*1P-71

X
X
Xiang, Rong
Xiang, RongYY
Yagi, Takashi

Yakobson,
Boris
Yagi,
Takashi
Yamada, Maho
Yakobson,
Boris
Yamada, Takeo
Maho
Yamada-takamura,
Yamada,Takeo
YukikoYamada-takamura,
Yamagishi, Kazuki
YukikoYamamoto, Kazuki
Daiki
Yamagishi,
Yamamoto, Daiki
Yamamoto, Takahiro
Yamashita, Aichi
Yamamoto,
Takahiro
Daiki
Yamashita, Aichi
KenichiYamashita, Daiki
Yana, Takumi
Yamashita,
KenichiYanagi,Kazuhiro
Yana,
Takumi
Yanagi, Kazuhiro
Yanagisawa, Haruaki
Yao, Yao
Yanagisawa,HaruakiYao, Yao

Yasui, Kotaro
Yi, Hsin
Yasui,
KotaroYoda,
TakakiYi,
Hsin
Yomogida,
Yohei
Yoda,
Takaki
Yomogida, Yohei
Yoshida, Akari
Yoshikawa,Ryo
Yoshida,Akari
Yoshimura, Takeshi
Yoshikawa,Ryo
Yotsuya, Shotaro
Yoshimura,TakeshiYuan, Wenyu
Yotsuya,
ShotaroYuhara,WataruYuan,
Wenyu
Yumura,Wataru
TakashiYuhara,Yumura, Takashi*1P-1*1P-65*1P-1*1P-86*1P-65
1P-17, 1P-18, 1P-57,*1P-86
1P-60, 1P-18,
1P-72, 1P-57,*3-8, 3-9,
1P-17,
3-13 1P-72, *3-8, 3-9,
1P-60,
1P-17
3-13
1P-47
1P-17
1P-81
1P-47
*1P-81
1P-81
3-13*1P-81
1P-84
3-13
1P-43
1P-84
1P-43

Zhang, Qiang
Zaumseil,
Jana
Shaochun
Zhang, Qiang
Zheng, Liu
Zhang,
Shaochun
Zheng, Yongjia
LiuZhou, Ruifeng
Zheng,
YongjiaZhou, Ying
Ruifeng
Zolotoukhina,
Zhou,
Ying Tatiana
Zolotoukhina, Tatiana

1P-18, 3-9
1P-46, 3-9
1P-61, 3-5
1P-18,
1P-67 1P-61, 3-5
1P-46,
1P-66
1P-67
1P-58, *1P-61, 2-7
1P-66
1P-54 *1P-61, 2-7
1P-58,
1P-4
1P-54
1P-84
1P-4
1P-84

Z
Z
Zaumseil, Jana

1P-13, 1P-58, 1P-61,
2-7,
3-41P-58, 1P-61,
1P-13,
2-7, 3-4
1P-18, 3-9, 3-13
1P-58 3-9, 3-13
1P-18,
2-5
1P-58
1P-4
2-5
3S-4
1P-4
3S-4
*1P-80
1P-34, 1P-74, *1P-75,*1P-802-6
1P-34,
1P-74, *1P-75,
1P-17
2-6
1P-79, 1P-80
1P-17
3S-1 1P-80
1P-79,
1P-38
3S-1
2-1
1P-38
1P-17, 1P-18, 1P-57,
2-1
1P-60,
3-9,
1P-17, 1P-72,
1P-18, 3-8,
1P-57,*3-13 1P-72, 3-8, 3-9,
1P-60,
3-11*3-13*1P-55
3-11*1P-55- 137 - 137 -複写をご希望の方へ

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2021 年 8 月 25 日発行

第 61 回フラーレン・ナノチューブ・グラフェン総合シンポジウム
講演要旨集≪フラーレン・ナノチューブ・グラフェン学会≫〒464-8601 愛知県名古屋市千種区不老町
名古屋大学 未来材料･システム研究所
未来･エレクトロニクス集積研究センター 大野研究室内
Phone/Fax：03-3830-4848
E-mail：secretariat@fntg.jp
URL：https://fntg.jp/jp_new/

印刷 / 製本 中西印刷株式会社

高感度近赤外線２次元 InGaAs ハイスピードカメラ

NIRvana® HS؄‫׮י‬؉՛‫׾‬ӼӿӺӨԶՄՇӨӲӨԶՉՀՀӨԀӾӺՌӿӻӼӨՄԺՌԵՀՇӨӴӻӼӺӺӨԶՄՇӨӲӨӼӺӺՌӼӺӺӨՄԺՌԵՀՇӨӴ໣ఀ֩ၥ‫־‬ഞ֖‫ؗ‬՛‫׾‬ԔՂՈԵԷՆԱՈԵӨԦԸԺՀԵӨԡԵԱԴӨӲԔԦԡӴӨՁՃԴԵဩఐ
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Quantum Eﬃciency (%)‫ח‬،‫צ؟‬՛‫ب؜׬‬፯Ք؊‫פ׸؀׽מ‬ଅ൩ԟԙ‫ؖי‬՛‫ץب׭‬ਸֲ‫ؠ׽פ؏׮‬Քࡴഓஶ౒ຍ‫ؖי‬՛‫ץب׭‬ਸֲ‫ؠ׽פ؏׮‬Ք໤ጉဃཕԟԙ‫ؖי‬՛‫ץب׭‬ਸֲ‫ؠ׽פ؏׮‬Ք࿵໲৑໐ᅑೕ୯‫ؖי‬՛‫ץب׭‬Քඳᆀཉኜ‫ؖי‬՛‫ץب׭‬ՔԔՂӷԥԺՊՃ‫ؖי‬՛‫ץب׭‬Ӡ֩֨

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౗ዻ

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ダークチャージ

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ロール状に巻いた金属ホイルを、巻き取りな
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2D HeterostructureTransfer SystemNEW!!
fully motorizedtransfer systems !!
高品質の2D結晶ヘテロ構造を作製するのに必要なすべての機能が含まれています!!
●PDMSスタンプの正確な配置●Ready to Useのシステム構成●コンパクト設計●パソコンによる操作は不要●1℃単位での加温設定が可能

デモ機の貸し出し可能*HQ Graphene社は高品質の2D単結晶を提供している業界トップクラスのメーカーです。

Abalonyx社品:酸化グラフェン(GO)modified Hummers法で生成されたGOをペーストor乾燥粉末で提供!
・ 20％水性GOペースト(酸性) / 水性10％GO水溶液(酸性度低下)
・ <35 meshのGO乾燥粉末、超音波処理で脱イオン水に完全に分散

Abalonyx社品: 還元酸化グラフェン(rGO)

無料サンプルあり

酸化グラフェンを熱還元して生産したrGOを提供!
・ 導電性および疎水性/両親媒性の部分的に還元された rGO
・ 独自の圧縮プロセスで製造されたポリマー分散用 rGO*Abalobyx社: 酸化グラフェン＆還元グラフェン製品のリーディングカンパニー

Grolltex社品: CVDグラフェン/hBN
高品質なCVDグラフェンおよびhBNを提供!
・ 大面積の単層グラフェン/hBNを実現
・ 銅フォイル/Si基板以外への転写が可能

輸入販売元【お問い合わせ】

フィルジェン 株式会社
TEL:052-624-4388 FAX:052-624-4389
メール:biosupport@filgen.jp URL:https://filgen.jp/