Power and sensing
Selection guide 2024-2025

www.infineon.com

Driving decarbonization and digitalization. Together.
数字低碳 共创未来
Dear customer,
Semiconductors are essential for enabling a climate-neutraland digitalized world. Infineon semiconductors are enablers
to help avoid carbon emissions, use resources sustainably,manage power effectively and intelligently, give “things”
smart senses, and process data quickly and reliably. This is ouroffering to you, our valued customers, to support you in making
a difference with your products.

Adam White,
Division President ofPower and Sensor Systems电源与传感系统事业部总裁“Driving decarbonization and digitalization. Together.” isInfineon’s vision as a leader in power systems as well as theInternet of Things (IoT) and the purpose all Infineon employees
are committed to. We are privileged to offer and promise you
leading-edge technology with the highest quality and a stabledelivery of reliability. Our portfolio includes power, connectivity,
RF, and sensor system technologies to develop smaller, lighter,smarter, and more efficient solutions for consumer devices,
smart home/building applications, robotics, computing anddata centers, charging devices, power tools, and more. The next
generation of silicon and wide-bandgap (SiC and GaN) solutions
provides unparalleled performance and reliability to power AI,
5G, big data, and renewable energy applications.
What differentiates us as an industry leader?
‒ We can leverage the full potential of all three technologies,
Si, SiC, and GaN, to provide the best possible solution to ourcustomers’ needs.
‒ We significantly increased our GaN offering with theacquisition of GaN Systems, now offering the broadest
product and IP portfolio in the market for MV and HV GaN
products, including system-enabling components (e.g.,
drivers and controllers).
‒ We have a large portfolio of ambient sensors for consumers,
smart homes, IoT, and automotive.
‒ We follow the “Product to System” approach and offer
optimized system solutions comprising hardware, software,and algorithms.
To further expand our leadership in power systems, weare accelerating our wide bandgap offering and, therefore,
strengthening our market position by adding significant
manufacturing capacities for SiC and GaN in Kulim, Malaysia.
Such innovative technologies will further lead to solutions
addressing decarbonization and digitalization. These
semiconductors offer added value to our customers because of
better system performance in terms of efficiency, size, and costcompared to silicon-based solutions.
To answer to the structurally growing demand forsemiconductors and to support our customers’ business
continuity, we are expanding manufacturing capacities
worldwide. We broke ground in Dresden, Germany to
manufacture analog/mixed-signal components used in power
supply systems, for example, in energy-efficient charging
systems, in data centers, industrial, renewables or applications
for the IoT. The interaction of power semiconductors andanalog/mixed-signal components makes creating energyefficient and intelligent system solutions possible. Customer
commitments to new design wins in automotive and industrial
applications as well as pre-payments back this expansion.
The Power and Sensing Selection Guide 2024-2025 is the mostcomprehensive overview of our products and the latest powerand sensing technology advancements designed to cater yourneeds. We strongly believe that this digital catalog will support
your roadmap planning to stay ahead of competition. Please
get in touch with our talented teams for personal support on
any product-related questions.
Let’s drive decarbonization and digitalization. Together.

尊敬的客户，

半导体是实现气候中和与数字化世界的关键 。英 飞 凌 半 导 体 有 助 于 避 免 碳 排 放 、可 持 续
地 利 用 资 源 、有 效 而 智 能 地 管 理 电 力 、赋 予

“ 物 ”以 智 能 感 知 ，以 及 快 速 而 可 靠 地 处 理 数

据 。这 也 是 我 们 为 您 - - 我 们 尊 贵 的 客 户 提 供

的 服 务 ，以 支 持 您 用 自 己 的 产 品 改 变 世 界 。

“数字低碳 共创未来”这是英飞凌作为电力系统

和物联网（IoT）领导者的愿景，也是英飞凌全体员
工孜孜以求的目标。我们有幸为您提供并承诺交付具有最高质量和稳定可靠的领先技术。我们的产品
组合包括电源、连接、射频和传感器系统技术，可为消费类设备、智能家居/智能楼宇、机器人、计算和
数据中心、充电设备、电动工具等应用开发更小、更轻、更智能、更高效的解决方案。下一代硅和宽带隙（SiC 和 GaN）解决方案可为人工智能、5G、大数据

和可再生能源应用提供无与伦比的性能和可靠性。
作为行业领导者，我们有何与众不同之处？

– 我们可以充分利用 Si、SiC 和 GaN 这三种技术的
全部潜力，为客户的需求提供最佳解决方案。

– 通过收购 GaN Systems，我们大幅增加了氮化镓
产品的供应量，目前可为中压和高压氮化镓产品

提供市场上最广泛的产品和 IP 组合，包括系统使
能元件（如驱动器和控制器）。

– 我们拥有面向消费类、智能家居、物联网和汽车应
用的大量环境传感器产品组合。

– 我们遵循“从产品到系统”的方法，提供包括硬件、软件和算法在内的优化系统解决方案。

为了进一步扩大我们在电力系统领域的领先地位，
我们正在加快宽带隙产品的开发，通过在马来西亚库林（Kulim）增加 SiC 和 GaN 的重要生产能力来加
强我们的市场地位。这些创新技术将进一步引领实现低碳化和数字化的解决方案。与硅基解决方案相比，这些半导体在效率、尺寸和成本方面具有更好的系统性能，因此能为我们的客户带来更多价值。
为 了 满 足 对 半 导 体 结 构 性 增 长 的 需 求 ，支 持
客 户 的 业 务 连 贯 性 ，我 们 正 在 全 球 范 围 内 扩

大 生 产 能 力 。我 们 在 德 国 德 累 斯 顿 破 土 动

工 ，生 产 模 拟 / 混 合 信 号 元 件 ，这 些 元 件 可 用于 电 源 供 应 系 统 ，例 如 节 能 充 电 系 统 、数 据

中 心 、工 业 设 备 、可 再 生 能 源 或 物 联 网 应 用 。
功 率 半 导 体 与 模 拟 / 混 合 信 号 元 件 的 相 互 作 用，使 创 建 高 能 效 、智 能 化 的 系 统 解 决 方 案 成 为 可
能 。此次产能扩张得到了客户的支持，包括汽车

和工业应用领域的新设计订单以及预付款项。

《电源与传感选型手册 2024-2025》最全面地概述了我们的产品以及最新的电源和传感技术进展，旨 在 满 足 您 的 需 求 。我 们 坚 信，这 份 电 子 手

册 将 为 您 的 策 略 规 划 提 供 支 持，使 您 在 竞 争 中保持领先地位 。如有任何产品相关问题，请联系我们的专业团队，我们将为您提供个性化支持 。
数字低碳 共创未来Adam White,
Division President Power & Sensor Systems电源与传感系统事业部总裁Contents
Solutions

4

Industrial SMPS

5

Desktop PC power supply

7

Power over Ethernet (PoE)

8

Fast/wireless EV-charging

10

Wireless charging

15

Battery chargers

21

USB-C chargers and adapters

22

Condition monitoring and predictive maintenance24

Battery protection

27

Battery monitoring and control

30

Class D audio

33

Motor control for power tool and robotics

35

Motor control for LEV and e-forklift

38

Smart devices with NFC interface

44

Solutions for solid-state relays

46

Solutions for solid-state circuit breakers

48

Applications

50

Air conditioning systems

51

Ceiling fan

53

Refrigerators

57

Air purifier

60

Induction cooking

62

Laundry machine64

Tumble dryer

68

Cordless vacuum cleaner

72

Cordless power tools and outdoor power equipment

74

Smart TV

76

Smart speaker

80

Smartwatches, feature watches, wristbands, and smart rings 82
Security camera and video doorbell

85

Smart conferencing systems

87

LED lighting

89

Plug & LEDs play solutions

91

Smart lighting solutions

92

Telecommunication infrastructure

97

Data center and computing

99

Solar PV

101

Energy storage systems

104

Robotics

106

Light electric vehicles and electric forklift

111

eBike, eScooter, eMotorcycle, eRickshaw, eMicroCar, eForklift

111

On-board charger for xEV applications

113

Products

116

15-300 V MOSFETs

117

500-950 V MOSFETs

160

Gate-driver ICs

197

Digital isolators

243

Discrete IGBTs and silicon power diodes

252

Intelligent power switches and modules

272

Microcontrollers

289

USB-C controllers and peripherals

332

Power management ICs

365

Wide-bandgap semiconductors

450

XENSIV™ sensors

483

Infineon powerful support

569

Infineon customized solutions

570

The Infineon Partner Program572

Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules

Applications

SolutionsPowermanagement ICs

USB-C controllers
and peripherals‒ Battery protection‒ Battery monitoring and control‒ Class D audio‒ Motor control for power tool and robotics‒ Motor control for LEV and e-forklift‒ Smart devices with NFC interface‒ Solutions for solid-state relays‒ Solutions for solid-state circuit breakers

Sensors

WBG semiconductors‒ Industrial SMPS
‒ Desktop PC power supply‒ Power over Ethernet (PoE)‒ Fast/wireless EV-charging‒ Wireless charging‒ Battery chargers‒ USB-C chargers and adapters‒ Condition monitoring and predictive maintenanceMicrocontrollers

SMPS, battery management systems, motor control,
UPS, contactless power and sensing

Click here to learn more:
www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

Supportwww.infineon.com/smps
www.infineon.com/xxxxxxx

4

Solutions

Industrial SMPS

Applications

SMPS - industrial SMPS

Industrial SMPS

15-300 V MOSFETs

Reliable and robust

500-950 V MOSFETs

The industrial SMPS category covers a wide range of applications, ranging from 15 W up to 1 kW and higher. They must
be efficient, able to deliver maximum power, and function with many different input voltages while at the same timeremaining highly reliable in rugged environments. Infineon’s solutions for industrial SMPS deliver all of this and more.
Our wide range of system solutions, enabled by Infineon’s stringent quality standards and our cutting-edge silicon andwide-bandgap technology, for example, will allow you to reliably deliver efficient power to your industrial application.

Gate-driver ICs

In addition to our expansive product portfolio, Infineon also offers several other tools to assist you in your design
journey, including our library of simulation tools, reference designs, and evaluation boards, empowering you to get tomarket even faster.

Digital isolators

Strike the perfect balance between decarbonization, power density, and saving operating costs with Infineon‘ssolutions for industrial SMPS.

– Enables worldwide usage to conform to different grid AC categories– Highest quality, robustness, and reliability in challenging environments– Save space while still delivering max power– High peak efficiency and lowest standy power– Future-proofed systems for long lifecycles– Higher density, efficiency, and switching frequency plus enabling ZVS– Easier design stages and get to market faster

Intelligent powerswitches and modules

Key benefits– Wide universal input range– Infineon‘s stringent quality standards– High-density designs– Cutting edge silicon (Si) and silicon carbide (SiC) MOSFETs– Advanced wide-bandgap (WBG) technology– Digitally controlled stages (600 W up to >1 kW designs)– Online simulation tools, reference designs, and evaluation boards

Microcontrollers

Key features

IGBT discretes andsilicon power diodes

Features and benefits

Application diagrams

USB-C controllers
and peripherals

PFC-PWM with AUX and ICs

Flyback non-AUX
Vin
AC

PFC

Vin
AC

Vout

Vbus
Rectification

Main stage

Rectification

Main stage

DC
Power
management ICs

PFC

DC

Vout

Vbus

Vin

Vout
Rectification

DC

Sensors

Flyback

Click here to learn more:
www.infineon.com/smps

SupportAC

WBG semiconductors

Flyback

5

packages– Fast-switching speed for improved efficiency and thermals– Low gate charge for enhanced light-load efficiency and low
power consumption at no load condition– Optimized VGS threshold for low turn-off losses
600 V CoolMOS™ S7 SJ MOSFET– PFC efficiency boost ~1%– Lowest RDS(on) in SMD packages

600 V CoolMOS™ 8 SJ MOSFET– Best price/performance, integrating fast body diode– Simplified product portfolio– Highest quality and reliability– Better energy efficiency and cost targets with providing
good enough power density– TSC package offerings and 7mohm available
Totem-pole PFC

650 V CoolSiC™ MOSFET– Highest power handling– Best thermal capability

Boost diodes

DCM PFC

650 V TRENCHSTOP™ IGBT7 with emittercontrolled 7 (EC7) diode– Improved diode softness and humidity rugged.
– Allows a more reliable design with lower failure rates

CCM PFC

650 V TRENCHSTOP™ IGBT7 with emittercontrolled 7 (EC7) diodeControl ICs

CCM PFC ICs

ICE3PCS0xG– High PFC and low THD

Main stage

Control ICs

HB LLC ICs

650 V ICE1HS01G-1/ICE2HS01G

Synchronous rectification

Medium-voltage
dioges MOSFETs

HB LLC +center-tap

OptiMOS™ 30 V/40 V/60 V/80 V/150 V/250 V– High efficiency and low EMI– Optimized cost/performance and low thermals

PFC/Main stage/
Synchronous rectification

Gate driver ICs

Boost PFC

EiceDRIVER™ low side gate driver IC:
1ED44173N01B– Single-channel with fast, accurate (± 5%), integrated

Totem-pole
PFC/HB LLC

EiceDRIVER™ Compact gate driver IC:
1EDI60N12AF, 1ED3124MU12F– Isolated gate driver, up to 14 A, 100 ns propagation delay

EiceDRIVER™ level-shift gate driver IC:
2ED2181S06F, 2ED21814S06J– 650 V half-bridge SOI driver with integrated bootstrap diode– Superior –VS transient voltage immunity– High-frequency switching (500 kHz)
– 4 A/4 A high- and low-side gate driver

EiceDRIVER™ level-shift gate driver IC:
IRS2186S, IRS21864S

FlybackInterleaved
PFC/HB LLC

EiceDRIVER™ low side gate driver IC:
2ED24427N01F

Control ICs

QR flyback

ICE5QSBG

High-voltage MOSFETs

Flyback

700 V/800 V CoolMOS™ P7 SJ MOSFET

600 V CoolMOS™ 8 SJ MOSFET

IGBT discretes andsilicon power diodes

Digital isolators

High voltage SiC MOSFETs

overcurrent protection (OCP)– Dual-channel, 10 A low-side driver in DSO-8 with power-pad– Integrated UVLO protection and enable (EN) function– High frequency, high power operation with BOM savings– High efficiency and low standby power– Best price-competitive CoolMOS™ family– Lower switching losses versus standard MOSFET– Controlled dV/dt and di/dt for better EMI– Best price/performance, integrating fast body diode– Simplified product portfolio– Highest quality and reliability– Better energy efficiency and cost targets with providing
good enough power density

Control ICs

Isolation

Digital isolator

QR/FF flyback

700 V/800 V CoolSET™ integrated powerstage
ICE5QRxx70/80A(Z)(G)ISOFACE™ digital isolator
2DIB0410F– 2+0 digital isolator with TTL input threshold and fail-safe
default low output state– 3 kVRMS isolation voltage (UL 1577) in DSO-8 package– High common mode transient immunity > 100 kV/μs

Sensors

Auxiliary power supply– TSC package offerings and 7mohm available– Low standby power, high efficiency, and robustness

Intelligent powerswitches and modules

600 V CoolMOS™ P6 SJ MOSFET

500-950 V MOSFETs

Benefits– Best thermal performance– Rugged body diode– ESD enhancement for production line
– Wide RDS(on) portfolio including both THD and SMD

Microcontrollers

Technology
600 V/800 V/950 V CoolMOS™ P7 SJ MOSFET

USB-C controllers
and peripherals

Topology
CrCM/DCM PFC

Power
management ICs

Product category
High-voltage MOSFETs

WBG semiconductors

Functional block
PFC/Main stage

Gate-driver ICs

Product portfolio

15-300 V MOSFETs

Applications

Solutions

Industrial SMPS

Click here to learn more:
Supportwww.infineon.com/smps
6Solutions

SMPS - PC power supply

The desktop PC power market is divided into high-end gaming or mining PCs and enterprise systems. Both types of PCs
use the x86 CPU, which requires a much higher peak current and higher power than previous solutions. Whether yourdesign is meant for use in gaming/mining systems or less demanding enterprise workstations, Infineon has you covered
with our solutions for a wide range of topologies.

IGBT discretes andsilicon power diodes

Our wide semiconductor portfolio meets and, in some cases, exceeds needs and requirements. For example, our
CoolMOS™ high-voltage MOSFETs, OptiMOS™ mid- and low-voltage MOSFETs, EiceDRIVER™ gate drivers, and CoolSET™
auxiliary SMPS controllers are all best-fit products for the current trends in desktop PC SMPS designs.

Intelligent powerswitches and modules

Application diagram
PFC-PWM with AUX and ICs

Vin

Vout

Vbus

AC

Rectification

Main stage

DC

USB-C controllers
and peripherals

Microcontrollers

PFC

500-950 V MOSFETs

Switched-mode power supply for a desktop PC should deliver efficient power conversion, a compact design, stable
power output, protective features, and effective cooling, contributing to the reliable and efficient operation of desktop
PCs of any type. Infineon’s wide portfolio of semiconductors does all of this and more. We offer a complete systemsolution to meet desktop power supply unit (PSU) requirements and trends such as higher power and efficiency. In
addition to our impressive silicon products, we also offer wide bandgap options that bring many additional benefits andoptions into the picture.

Gate-driver ICs

More efficient SMPS with higher output power

15-300 V MOSFETs

Applications

Desktop PC power supply

Digital isolators

Desktop PC power supply

Product portfolio
PFC/main stage

Product category
High voltage MOSFETs

Topology
CrCM/DCM PFC

Technology

Benefits

600 V CoolMOS™ P7– Best thermal performance– Rugged body diode– ESD enhancement for production line
– Wide RDS(on) portfolio including both THD and SMD

600 V CoolMOS™ P6– Fast switching speed for improved efficiency andPowermanagement ICs

Functional block

packagesthermals– Low gate charge for enhanced light-load efficiency and
500 V CoolMOS™ CE
600 V CoolMOS™ 8

WBG semiconductors

low power consumption at no load condition– Optimized VGS threshold for low turn-off losses– Optimized cost/performance– Lower transition losses versus standard MOSFET– Best price/performance, integrating fast body diode– Simplified product portfolio– Highest quality and reliability– Better energy efficiency and cost targets with providing
good enough power density

Control ICs

CCM PFC ICs

ICE3PCS0xG

Main stage

Control Ics

HB LLC ICs

650 V – ICE1HS01G-1/ICE2HS01G

Synchronousrectification

Medium voltage diodes HB LLC + center-tap

OptiMOS™ 40 V
OptiMOS™ 60 V

Sensors– High PFC and low THD– High efficiency and low EMI– Optimized cost/performance and low thermals– Layout tolerance and low thermals

SupportBoost diodes– TSC package offerings and 7mohm available“– Improved diode softness and humidity rugged
DCM PFC
650 V EC7
– Allows a more reliable design with lower failure rates
CCM/interleaved PFC CoolSiC™ Schottky diode 650 V G6 – Low FOM VF*QG

Click here to learn more:
www.infineon.com/smps
7Applications

SolutionsPower over Ethernet

Power over Ethernet (PoE)

15-300 V MOSFETs

Designing reliable and power-efficient PoE power supplies

Gate-driver ICs

500-950 V MOSFETs

The latest IEEE 802.3bt standard for Power over Ethernet (PoE) not only increased the available power via PoE but alsochanged requirements for its power supply. Power sourcing equipment (PSE) now provides up to 100 W per port via
a twisted pair of Ethernet cabling, whereas powered devices (PD) have up to 71 W available. Adopting this new PoE
standard also largely depends on the capability to increase the power density on the PSE side while maintaining thesame form factor as wide load conditions and higher power budgets change requirements. Infineon has long-standing
expertise in switched-mode power supply (SMPS) designs and offers a highly reliable, rugged and efficient high-quality
MOSFET portfolio for your PoE PSE and PD designs.

Powered devices

Power sourcing equipment (PSE) is any equipment that is able to provide and source power on the twisted pair Ethernet
cable, such as PoE switches, PoE extenders and PoE injectors. PSE needs to be highly reliable to prevent device failureand ensure uninterruptible operations of connected power devices. With IEEE 802.3bt PoE, the power demand for
PoE switches significantly increases with highest efficiency over wide load conditions. For example, to fully enable aswitch with twenty-four 802.3bt compliant PoE ports, up to 2.4 kW of available PoE power budget is required. Fulfillingthese requirements makes modifications in AC-DC SMPS designs necessary.
Main power supply for power sourcing equipment

PoE port

WBG semiconductors

AC-DC rectifier

USB-C controllers
and peripherals

Power sourcing equipment

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

Main power supply for power devices

Powermanagement ICs

Powered devices (PD) include devices
powered by PoE such as wireless accesspoints, 5G small-cell radio units, IP cameras,
conference systems, thin clients or public
address systems. DC-DC SMPS designs need to
be power efficient to maximize the available
power for the PD itself with the simultaneous
increase of power density. Moreover, PDs needto function reliably in the field, even underpotentially rough conditions for a long time.

Sensors

ORing

Click here to learn more:
Supportwww.infineon.com/poe
8Solutions

Power over Ethernet

Control ICs

DCM, CrCM, CCM

High-voltage GaN

CCM totem-pole

GaN driver ICs

CCM totem-pole

SiC Schottky diode

DCM, CrCM, CCM

Silicon power diode

DCM, CrCM, CCM

Product family

Benefits– Best FOM RDS(on) x QG and RDS(on) x Eoss
– Lowest RDS(on) per package– Lowest dependency of switching losses from Rg,ext– Low turn-off losses, low Qoss and low QG
ICE3PCS0xG– Simple external circuitry– High PFC and low THD– Highest efficiency and highest power density
CoolGaN™ GIT HEMT 600 V
EiceDRIVER™ 1EDF5673Fx/1EDS5663H – Low driving impedance (on-resistance 0.85 Ω source, 0.35
600 V/650 V CoolMOS™ C7600 V CoolMOS™ P7

Ω sink)– Input-output propagation delay accuracy: ± 5 ns
– Functional and reinforced isolation available
CoolSiC™ Schottky diode 650 V G5/G6 – Low FOM VF x QC
650 V EC7
– Improved diode softness and humidity rugged. Allows amore reliable design with lower failure rates

Gate-driver ICs-– Best FOM RDS(on) x QG and RDS(on) x Eoss
– Lowest RDS(on) per package– Lowest dependency of switching losses from Rg,ext,– Low turn-off losses, low Qoss and low QG
OptiMOS™ 60 V-200 V– Industry's lowest RDS(on) and power density– Highest system efficiency
StrongIRFET™ 60 V-200 V– Outstanding quality and reliability
Small-signal MOSFETs 60 V-200 V– Reduces the need for a snubber circuit
EiceDRIVER™ 1EDNx/1EDi/2EDN7x/2E – Broadest portfolio in terms of isolation, channels, andControl ICs

HB LLC PWM-QF
PWM-FF

ICE2HS01G ICE2QS03G/ICE5QSBGICE5ASAG/ICE5GSAG– High efficiency and low EMI

High-voltage GaN

Flyback (ACF), HB
LLC, FB LLC, ZVS

CoolGaN™ GIT HEMT 600 V– Highest efficiency and highest power density

GaN driver ICs-

EiceDRIVER™ 1EDF5673Fx/1EDS5663H – Low driving impedance (on-resistance 0.85 Ω source, 0.35
Ω sink)– Input-output propagation delay accuracy: ± 5 ns
– Functional and reinforced isolation available

PFC-main stage
combo

High-voltage MOSFETs

HB LLC

600 V CoolMOS™ P7

Synchronousrectification

Low- and medium-voltage Synchronous rectiMOSFETs
fication

OptiMOS™ 100 V-150 V
OptiMOS™ 40 V-120 V
StrongIRFET™ 40 V-100 V

Gate-driver ICs

EiceDRIVER™ 1EDNx/1EDi/2EDN7x/
2EDLx/2EDFx/2EDSx

ORing

Low- and medium-voltage ORing MOSFETs
MOSFETs

Auxiliary power
supplyAC-DC integrated power
stage

Fixed-frequency (FF) CoolSET™ ICE5xRxx80AG CoolSET™
Quasi-resonant (QR) ICE5QRxx80BG

Analog and digital 32-bit XMC™ industrial
control IC
microcontroller based onArm® Cortex®-M
Port MOSFET

OptiMOS™ 25 V-200 V

32-bit XMC1000 32-bit XMC4000

OptiMOS™ 100 V
OptiMOS™ Linear FET
Recommended product portfolio for powered devices
StrongIRFET™ 100 V
Functional block

Medium-voltage MOSFETs -Product category

Topology

Medium-voltage
MOSFETs

Active bridge
rectifier

OptiMOS™ 100 V-150 V
StrongIRFET™ 100 V

Synchronousrectification

Low- and mediumvoltage MOSFETs

Synchronousrectification

OptiMOS™ 25 V-100 V
OptiMOS™ 40 V
IR MOSFET™ 20 V-100 V

DC-DC
switching stage

Medium-voltage
MOSFETs

Flyback (ACF)

OptiMOS™ 100 V-150 V

AC-DC backup
SMPS

High-voltage
MOSFETs

Flyback (ACF)

600 V to 950 V CoolMOS™ P7

AC-DC integrated
power stage

Fixed-frequency (FF) CoolSET™ 800 V ICE5GRxx80AG,
800 V ICE5ARxx80BZS,
700 V ICE5ARxx70AG,
700 V ICE5ARxx70BZS
Quasi-resonant (QR) CoolSET™ 700 V ICE5QRxx70A(Z) (G),800 V ICE5QRxx80A(Z)(G),800 V ICE5QRxx80BG

Gate-driver ICs

protection– Industry's lowest FOM (RDS(on) x QG)– Highest system efficiency and power density– Quasi-resonant switching operation for high efficiency
and low EMI signature– Fixed-frequency switching operation for ease of design– Flexibility, HR PWM, digital communication– Arm® based standard MCU family and wide family– Wide SOA and outstanding reliability for PoE ports– Low RDS(on)– Space-saving 3.3 x 3.3 S3O8/PQFN package

Product family

Active bridge
rectifier

Digital isolators– Low turn-off losses, low Qoss, and low QG and thermals– Fast-switching speed for improved efficiency– Industry's lowest RDS(on) and power density– Highest system efficiency– Outstanding quality and reliability– Reduces the need for a snubber circuit– Broadest portfolio in terms of isolation, channels, andIntelligent powerswitches and modules-

protection

Microcontrollers

DLx/2EDFx/2EDSx

USB-C controllers
and peripherals

Low- and medium-voltage Isolated DC-DC priMOSFETs
mary-side PWM

600 V CoolMOS™ P7/C7/CFD7
650 V TRENCHSTOP™ F5

Benefits– Industry's lowest RDS(on)– Highest system efficiency and power density– Industry's lowest RDS(on) and power density– Highest system efficiency– Outstanding quality and reliability– Low conduction losses, reduced overshoot– Logic level switching– Fast-switching speed for improved efficiency and thermals– Reduced gate charge for enhanced light load efficiency– Optimized gate-to-source voltage (VGS) threshold forPowermanagement ICs

Flyback (ACF), HB
LLC, FB LLC, ITTF,
ZVS

WBG semiconductors

DC-DC main stage High-voltage MOSFETs

15-300 V MOSFETs

Topology
DCM, CrCM, CCM,

500-950 V MOSFETs

Product category
High-voltage MOSFETs

IGBT discretes andsilicon power diodes

Functional block
PFC

Applications

Recommended product portfolio for power sourcing equipment

lower turn-off losses– Quasi-resonant switching operation for high efficiency
and low EMI signature operation for ease of design

Sensors– Fixed-frequency switching

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Applications

Solutions

Fast/wireless EV-charging

Fast/wireless EV-charging

15-300 V MOSFETs

Advanced solutions for DC EV-charging

Gate-driver ICs

500-950 V MOSFETs

As e-mobility increasingly becomes part of daily life, there is a growing need for more efficient charging
solutions. Fast electric vehicle (EV) charging stations equipped with powerful DC chargers are the answer. DC
EV-chargers are an attractive choice because they allow much faster charging than the standard AC EV ones thatmany EV owners have at home. Today, a DC charger with 150 kW can put a 200 km charge on an EV in around 15
minutes. As fast charging and battery technologies continue to evolve and improve in the near future, experts
anticipate the charging time to drop even further.

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

As a market leader and the global front-runner in power electronics, Infineon enables you to bring energyefficient DC EV-charger designs to life, with our highly efficient components and in-depth technical support. We
cover power ranges from kilowatts to megawatts in our broad portfolio of high-quality power semiconductors,
microcontrollers, gate drivers, security, safety, and authentication solutions. Our CoolMOS™ and CoolSiC™
MOSFETs, together with EiceDRIVER™ gate drivers, for example, are ideal in a wide range of DC EV-charging
designs. Their matchless advantages include high-frequency operation, high power density and reduced
switching losses, allowing you to reach high efficiency levels in any battery charging system.

Infineon offering and customer benefits
Infineon offering

Customer benefits– CoolMOS™ and CoolSiC™ discrete and power module semiconductor solutions– Highly efficient power conversion for reducing system size by up to 50 percent
and reduced cooling efforts– Scalability across various platforms for upgrading system power charger– Safe drive, advanced protection and ease of control– Bidirectional high precision current sensing– Identity protection against fake devices and protection against the manipula-– Power supply ICs (LDO, DC-DC)– Connectivity (CAN transceiver, AIROC™ Wi-Fi + Bluetooth® Combos)– Robust quality and easy to use implementation shorten time to market– and guarantee long operation

Microcontrollers

levels on demand– EiceDRIVER™ gate driver and XMC™ microcontroller– XENSIV™ magnetic current sensor– OPTIGA™

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

tion of the data

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Applications

Solutions

Fast/wireless EV-charging

Application diagram

DC/DC

Unidirectional

Unidirectional

Discrete solution

Grid

3 Level(NPC2, ANPC)

Battery Management
System (BMS)

CLLC

Module solution

Discrete solution

2 Level(B6)
Discrete solution

Module solution

Bi-directional

Bi-directional

Discrete solution

Electric Vehicle (EV)Battery System

LLC & ZVS

Multi-pulse

Module solution

DAB

Module solution

Discrete solution

Module solution

Gate-driver ICs

Vienna500-950 V MOSFETs

AC/DC
1 or 3 phase PFC stage

15-300 V MOSFETs

Power Conversion(sub-) unit >30-60 kW

Gate Driver
IGBT
Gate driver

Security

Microcontroller

Connectivity

Auxiliary power
conversion

MemoryDigital Isolator

Current
sensorDigital isolators

CoolSiC™
Gate driver

IGBT discretes andsilicon power diodes

MOSFET
Gate driver

Current
sensorIntelligent powerswitches and modules

Power control

Central Control Unit (CCU)

MemorySecurity

Digital Isolator

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Human-MachineInterface(HMI)

Connectivity
Microcontroller

Microcontrollers

Auxiliary power
conversion

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Product family

Product

600 V/650 V CoolMOS™ P7/C7/
CFD7

TO-247-3
TO-247-4

600 V CoolMOS™ 8

TO-247-3
TO-247-4

TRENCHSTOP™ IGBT7 650 V/1200 V TO-247-3
HighSpeed 3 H3 IGBTs 1200 V
TO-247-4
CoolSiC™ MOSFET 650 V/750
V/1200 V/2000 V

TO-247-3
TO-247-4
TO-263-7

Additional information– Large portfolio with granular RDS(on) selection– Different space-saving and high-performance packages– Ease of use and fast design-in through low ringing tendency and usage across– PFC and PWM stages– Simplified portfolio compared to previous families with granular RDS(on) selection– TO247-4 and Top-side cooled D-DPAK package options– Ease of use and fast design-in through low ringing tendency and usage across– PFC and PWM stages– High speed/high power IGBT
– First tailless/low-loss IGBT on market– Market proven and recognized quality leader– CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process– Optimized to allow for both the lowest losses in the application and the highest reliability
in operation– TO-247-4pin package versions with additional connection to the source, resulting in evenTO-220-2
TO-247-2
TO-247-3– CoolSiC™ Schottky diodes convince with better efficiency compared to Silicon diode

CoolSiC™ MOSFET modules sixpack 1200 V
CoolSiC™ MOSFET modules halfbridge 1200 V

EasyPACK™ 1B
EasyPACK™ 2B
EasyPACK™ 3B

1200 V HighSpeed 3 H3 IGBTs
modules- 3-level

EasyPACK™ 1B
EasyPACK™ 2B

600 V/650 V CoolMOS™ P7/C7/CFD7

TO-247-3
TO-247-4
TO-263-7(D2PAK)HSDSOP (DDPAK)– CoolSiC™ MOSFET modules with PressFIT contact technology and optimal pinout– Integrated NTC temperature sensor– Versions with pre-applied thermal interface material (TIM)– Optional AlN substrate with low thermal resistance versions– Enlarged gate drive voltage window– IGBT HighSpeed 3 with active "Neutral Point Clamp 2" topology– PressFIT contact technology and optimal pinout– Integrated NTC temperature sensor– Large portfolio with granular RDS(on) selection– Different space-saving and high-performance packages– Ease of use and fast design-in through low ringing tendency and usage across PFC and

600 V CoolMOS™ 8

TO-247-3
TO-247-4

Digital isolators

alternatives

IGBT discretes andsilicon power diodes

DC/DC

CoolSiC™ Schottky diodes
650 V/1200 V

Gate-driver ICs

lower switching losses than for TO247-3pin version, especially at higher currents andhigher switching frequencies.

PWM stages– Simplified portfolio compared to previous families with granular RDS(on) selection– TO247-4 and Top-side cooled D-DPAK package options– Ease of use and fast design-in through low ringing tendency and usage across PFC and
PWM stages

CoolSiC™ MOSFET 650 V/750
V/1200 V/2000 V

TO-247-3
TO-247-4
TO-263-7– CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process– Optimized to allow for both the lowest losses in the application and the highest reliability
in operation– TO-247-4pin package versions with additional connection to the source, resulting in even

Gate driver

1200 V CoolSiC™ EasyBRIDGE
diode module

EasyPACK™ 1B

EiceDRIVER™ 2EDB gate driver
EiceDRIVER™ 2EDR gate driver

DSO-14-WB

EiceDRIVER™ Compact gate driver DSO-8
EiceDRIVER™ Enhanced gate driver DSO-16
XENSIV™ - high-precision corelesscurrent sensors

VSON-6
TISON-8
TDSO-16– Dual-channel basic and reinforced (safe) isolated versions– 650 V and 1200 V voltage class versions– For Si, SiC and GaN– Single-channel isolated driver with versions comprising active Miller clamp or separateoutput (Compact) and DESAT, soft-off and active Miller Clamp (Enhanced)– Variants with different isolation levels and optional two-level slew-rate control– High-precision coreless open-loop current sensors for current ranges up-to ±132 A– Less bulky, and cost less compared to core-based current sensors– Variants with integrated and for external current rail
– UL variants

Sensors

Current sensors

alternatives.

– CoolSiC™ MOSFET modules with PressFIT contact technology and optimal pinout– Integrated NTC temperature sensor– Versions with pre-applied thermal interface material (TIM)– Optional AlN substrate with low thermal resistance versions– Enlarged gate drive voltage window– 1200 V diode bridge module with CoolSiC™ Schottky diode– PressFIT contact technology with optimal pinout– Integrated NTC temperature sensor

USB-C controllers
and peripherals

1200 V CoolSiC™ MOSFET modules EasyPACK™ 1B- fourpack
EasyPACK™ 2B
1200 V CoolSiC™ MOSFET modules EasyPACK™ 3B- halfbridge– CoolSiC™ Schottky diodes convince with better efficiency compared to Silicon diodePowermanagement ICs

TO-247-2
TO-247-3

WBG semiconductors

CoolSiC™ Schottky diodes 1200 V

Microcontrollers

lower switching losses than for TO247-3pin version, especially at higher currents andhigher switching frequencies.

Intelligent powerswitches and modules

Product category
AC/DC (PFC)

500-950 V MOSFETs

Power conversion

15-300 V MOSFETs

Applications

Solutions

Fast/wireless EV-charging

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Applications

Solutions

Fast/wireless EV-charging

Power control and auxiliary power supply
Product family

Product

Additional information

32-bit TriCore™ AURIX™ TC3xxx
MCU

TQFP
LQFP
BGA
LFBGA

– Tri-Core Microcontroller to control PFC + DC/DC stage with one device HSM (hardware

MemorySerial SPI F-RAM
EXCELON™ F-RAM

DSO-8

Connectivity

CAN Transceivers

DSO-8
DSO-14

CoolSET™ AC-DC integrated
power stages

DSO-12– Zero-delay writes– 1014 read/write cycles– 10-year data retention at +85ºC temperature– 200x lower energy than EEPROM– No complex wear-leveling overheads– Radiation Tolerant - Immune to soft errors caused by radiation that can produce bit flips– Broad portfolio with scalable feature set like
– With/without bus wake up– Sleep Mode versions– Different CAN Speeds from 1Mbit/s to 8Mbit/s– Compact, robust and easy to use solution– Fixed frequency and Quasi Resonant versions available– Fixed frequency and Quasi Resonant versions available– Extensive protection coverage to increase system robustness– Rapid start-up performance with cascode configuration

VQFN-48
LQFP-64– Multichannel power supply IC, optimized for AURIX™ MCU, up to ASIL-D rated

1700 V CoolSiC™ MOSFET discrete TO263-7– Perfect voltage class and RDS(on) fit for flyback based auxiliary power supplies– Perfect voltage class and RDS(on) fit for flyback based auxilary power supplies

OPTIREG™ PMIC

800 V/ 950V CoolMOS™ P7
MOSFET

SOT-223

Gate-driver ICs

500-950 V MOSFETs

secure module) full EVITA compliance

Digital isolators

PWM-FF (fixed frequency) Flyback DSO-8
ICs
PWM-QR (quasi resonant) FlybackICs

15-300 V MOSFETs

XMC™ families XMC1400 (for PFC)/ various depending – 32-bit MCU subsystem48/144/250/350MHz– Arm® Cortex®-M0+, M4 or M7 CPU
XMC4000/XMC7000
on feature set– Single or dual core versions– Up to up to 8 MB flash– 32 kB SRAM
– Up to 10-ch CAN, 11-ch SCB and up to 2x Ethernet and USB/up to 4 serial channels

IGBT discretes andsilicon power diodes

Product category
Microcontroller

Central Control Unit (CCU)

MemorySerial SPI F-RAM
EXCELON™ F-RAMIntelligent powerswitches and modules

Additional information– 32-bit MCU subsystem48/144/250/350MHz– Arm® Cortex®-M0+, M4 or M7 CPU– Single or dual core versions– Up to up to 8 MB flash– 32 kB SRAM
– Up to 10-ch CAN, 11-ch SCB and up to 2x Ethernet and USB/up to 4 serial channels
various depending – PSoC™ 4 portfolio include a customizable analog front end through programmableon feature set

analog blocks as well as wired and wireless connectivity options such as USB, CAN, andBluetooth Low Energy– PSoC™ 6 MCU delivers the highest level of protection defined by the Platform Security
Architecture (PSA) from Arm®
– Both families with the industry-leading CAPSENSE™ capacitive-sensing technology, enabling modern touch and gesture-based interfaces that are robust and reliable

DSO-8– Zero-delay writes– 1014 read/write cycles– 10-year data retention at +85ºC temperature– 200x lower energy than EEPROM– No complex wear-leveling overheads– Radiation Tolerant - Immune to soft errors caused by radiation that can produce bit flips– Endurance flex architecture: up to 25 years of data retention or 1+ million cycles endur-

SEMPER™ NOR Flash

Microcontrollers

32-bit PSoC™ 4/PSoC™ 6

Product
various depending
on feature set

USB-C controllers
and peripherals

Product family
XMC™ families XMC1400/
XMC4000/XMC7000

ance

Power
management ICs

Product category
Microcontroller– SafeBoot and error checking to ensure safe and reliable operation– Read bandwidth of up to 400 MB/s for direct program execution from long-term storage
instead of code shadowing to RAM– Enhanced reliability: Supports ECC (SECDED) along with CRC protection over interface
and memory data

CAN Transceivers

DSO-8
DSO-14

OPTIGA™ Trust
OPTIGA™ TPM

USON-10-2– Wi-Fi® and Bluetooth® combos– Bluetooth® and Bluetooth® Low Energy– Reduced power consumption, including very low sleep– Broad portfolio with scalable feature set like
– With/without bus wake up– Sleep Mode versions– Different CAN Speeds from 1Mbit/s to 8Mbit/s– The OPTIGA™ Trust family includes turnkey products for smaller platforms as well as

WBG semiconductors

WLBGA

programmable solutions– The OPTIGA™ TPM family offers a broad portfolio of standardized security controllers toprotect the integrity and authenticity of embedded devices and systems.

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SupportSecurity

AIROC™ Wi-Fi + Bluetooth®
CombosSensors

Connectivity

13

Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Digital isolators

Gate-driver ICs

Product family

Product

OPTIGA™ Trust B

Additional information

SLE952500000XTSA1

Asymmetric ECC authentication with individual certificate key pair andan extended temperature range of -40 to 110°C

OPTIGA™ Trust TPM

SLB9670XQ2.0

Fully TCG TPM 2.0 standard compliant module with the SPI interface

SLC37

SLC37ESA2M0,
SLI97CSIFX1M00PE

New class of performance and security cryptocontroller adhering to CC
EAL6+ high targeted and EMVCo targeted certifications for payment andeSIM applications

Communication
Product
TLE9350, TLE9351, TLE9252

Additional information

Microcontrollers

Product family
Automotive CAN transceiver

High-speed automotive CAN transceiver with 5 Mbps

USB-C controllers
and peripherals

Product category
CAN transceiver

Wireless EV-charging

~

PFC
AC/DC

-

Resonanceloops~
85 kHz~Battery
management

RectifierRoad sideHigh
voltageswitchWBG semiconductors++
Resonance
loops

High voltage
battery-

Car side

SupportPower(grid)
50/60 Hz

ReceiverSensors

M
InverterPowermanagement ICs

Wireless methods for power transfer to charge the batteries of electric vehicles are gaining attention. Several concepts
for wireless power transfer systems have been proposed, which in general seek to compensate the significant strayinductances on primary and secondary sides of the magnetic couplers by adaptive resonant methods. There are several
standards for wireless power transfer (WPT) in EV charging, such as SAE J2954 and SAE TIR J2954/2, which defines power
levels up to 500 kW and the use of the 85 kHz frequency band. Infineon’s CoolMOS ™ CFD7, C7, and P7 series along with
TRENCHSTOP™ 5 and 7 IGBTs, CoolSiC™ diodes, and EiceDRIVER™ gate-driver ICs are perfectly suited for driving inductive
power transfer systems on the road side which operate inside the 80 to 90 kHz band.

+HighvoltageswitchGate driver ICs

Gate driver ICs

Microcontroller

Microcontroller

IGBT discretes andsilicon power diodes

Product category
SecurityIntelligent powerswitches and modules

Authentication and encryption
As embedded systems are increasingly becoming targets of attackers, Infineon offers OPTIGA™ - a turnkey security solution.

Infineon’s solution recommendation for DC EV-charging system blocks
Our solutions have been designed for harsh environmental conditions and long lifetime thanks to Infineon’s deep
understanding of quality requirements. Take the next step by exploring our product portfolio for DC EV-charging systems.

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Solutions

Wireless charging

Applications

Wireless charging

15-300 V MOSFETs

Cost-effective and secure system solutions for consumer,
industrial and automotive applications

500-950 V MOSFETs

Infineon offers a broad portfolio of efficient, high-quality products and solutions to serve the key requirements of thedominant market standards: inductive (Qi (WLC)) and resonant (AirFuel) in consumer, industrial, and automotive.

Overcome common design challenges with Infineon

Gate-driver ICs

Compatibility issues

Digital isolators

Safety issues

Smart heat management

IGBT discretes andsilicon power diodes

Increasing efficiency andreducing charging times
Preventing device and battery damage

Microcontrollers

Intelligent powerswitches and modules

Applications that benefit from wireless charging

Infineon’s key enabling products for wireless charging

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals‒ Wireless charging ICs (WLC)‒ Power MOSFETs – OptiMOS™, StrongIRFET™, and CoolMOS™
‒ P-channel and N-channel small signal power MOSFETs‒ Gate-driver ICs – EiceDRIVER™: MOTIX™ 3-phase gate-driver IC‒ Authentication - OPTIGA™ Trust Automotive, OPTIGA™ trust auto
‒ XMC™, XMC™-SC (including software IP), TRAVEO™ MCU Automotive, AURIX ™, PSoC™
‒ USB-C and power delivery (PD): EZ-PD™ CCG3PA, EZ-PD™ PAG1, EZ-PD™ PAG2, EZ-PD™ CCG7S, EZ-PD™ CCG7D‒ PWM/flyback controllers and integrated power stage ICs – CoolSET™
‒ GaN GIT HEMT - CoolGaN™
‒ Voltage and buck regulators for component and bridge supply‒ Reverse Conducting IGBTs R5/R6 - 650 V

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15

Solutions

Wireless charging

Applications

Inductive wireless charging for consumer and industrial

Gate-driver ICs

500-950 V MOSFETs

15-300 V MOSFETs

Example: 50 W inductive system solution

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

Inductive wireless charging for automotive

Microcontrollers

Key components for inductive designs for consumer, industrial and automotive
Wireless charging product portfolio for inductive

MOSFETs*

30 V

BSC0996NS, BSC0993ND, BSZ0909NS, BSZ0909ND, BSZ0910ND, IRFHS8342

40 V

BSZ097N04LS, BSZ063N4LS6, BSC035N04LSG, BSC072N04LD

60 V

BSZ099N06LS5, BSZ065N06LS5, BSZ040N06LS5

80 V

IRL80HS120

100 V

IRL100HS121, BSZ146N10LS5, BSZ096N10LS5

Driver IC

WCDSC006, PX3519, IRS2301S, 1EDN7512B, 1ED44173N01B, 1EDI60N12AF, 2EDN7524G, IRS2007M, 2ED2182S06F, 6EDL7141

Microcontroller

XMC™, AURIX™ XMC™-SC (including software IP), PSoC™ family 4, TRAVEO™ (automotive)

Voltage regulators

TLE4296G V33, TLF50211EL, TLE8366EV

MCU + BLE controller

PSoC™ 4 Bluetooth® Low Energy (Bluetooth® Smart): CY8C4248LQI-BL573 (QFN)

AIROC™ Bluetooth® LE and Bluetooth®

CYW20719B2 / CYW20721B2

USB-C and power delivery (PD)

EZ-PD™ PAG1, EZ-PD™ PAG2, EZ-PD™ CCG3PA, EZ-PD™ CCG3, EZ-PD™ PMG1, EZ-PD™ barrel connector replacement (BCR)

Small-signal MOSFETs

See the portfolio on our webpage small-signal MOSFETs

Authentication

SLS32AIA020Ux – OPTIGA™ Trust Charge (USON10 3x3 package)
OPTIGA™ Trust Charge automotive

Reverse conducting IGBTs R5/R6 - 650 V

Package TO-247 IHW30N65RS (30 A), IHW40N65R5 (40 A), IHW50N65R5 (50 A)

Reference designs and kits

REF_WLC_TX15W_C1 – 15 W Qi power transmitter solution
REF_WLC_TX50W_N1 – 50 W transmitter solution
REF_WLCAUTO_TX15W_C1

Power
management ICs

WLC1115-68LQXQ transmitter IC
WLC1150-68LQXQ transmitter IC
WLC1515-68LQXQ transmitter IC for automotive

WBG semiconductors

Wireless charging IC

USB-C controllers
and peripherals

Products

Sensors

Sub-application

Click here to learn more:* Explore more MOSFET offerings on our webpage

Supportwww.infineon.com/wirelesscharging
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16

Solutions

Wireless charging

500-950 V MOSFETs
IGBT discretes andsilicon power diodes‒ Wireless charging IC – WLC1115-68LQXQ‒ OptiMOS™ power MOSFETs – BSZ0910LS‒ OPTIGA™ Trust Charge – SLS32AIA020Ux‒ Small Signal MOSFETs

Gate-driver ICs

Key components

Digital isolators

The REF_WLC_TX15W_C1 MP A11 power transmitter solution board is a highly integrated, Qi v1.3 compliant extended
power profile (EPP) transmitter design. This reference board is powered using a USB PD 3.0-compliant USB-C power
adapter and can support DC connector input of 9 - 20 V through firmware option. Combined with the OptiMOS™ power
MOSFETs and OPTIGA™ Trust Charge, this solution offers a highly efficient and secure wireless charging platform. The
solution board supports firmware upgrades using USB-C or I2C interface the included dongle and the wireless charging
configuration graphical user interface (GUI). There are additional options provided for firmware updates using serial
wire debug (SWD) while using the ModusToolBox™ and programmer.

15-300 V MOSFETs

Applications

15 W Qi transmitter solution with Infineon’s wireless charging IC WLC1115– Compliant Qi stack with library support– Programmable solution for evolving Qi standard– Zero voltage switching for high efficiency– Configurable gate drivers for EMC– Configurable thresholds for FOD, protection

Microcontrollers

Key benefits– Qi v1.3 compliant transmitter– UDB-PD/legacy protocol input >9 VDC– Peak system efficiency >83%
– Typical active charging area ±10 mm– Serial communication ports: I2C, UART
– Programming, EXT clock option– Foreign object detection with LEDs
– Configurable using wireless charging GUI

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Key features

Intelligent powerswitches and modules

Features and benefits

Click here to learn more:
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17

Solutions

Wireless charging

500-950 V MOSFETs
Gate-driver ICs
Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Key components‒ Wireless charging IC – WLC1150-68LQXQ‒ OptiMOS™ power MOSFETs – BSZ0910LS‒ OPTIGA™ Trust Charge – SLS32AIA020Ux(optional)‒ Small signal MOSFETs

Digital isolators

The REF_WLC_TX_50W_N1 transmitter solution board using WLC1150 enables high-performance and low-cost wirelesscharging solutions for various applications up to 50 W output power. The configurable WLC1150 solution, with Infineon’s
OptiMOS™ power devices offer highly efficient charging with flexible thermal management options. Combined with
Infineon’s USB-C charger solutions, it offers a complete product package that can help meet stringent regulatory andcompliance requirements. The WLC1150 uses Infineon high power proprietary protocol to deliver 50 W power. It is also
compatible to Qi 1.3.x specification with extended power profile (EPP), basic power profile (BPP), and proprietary power
delivery extension (PPDE). The controller is offered with both configuration utility and ModusToolbox™ software options
to develop your wireless charging solutions for proprietary charging protocols as well as Qi latest specification.

15-300 V MOSFETs

Applications

50 W transmitter solution with Infineon’s wireless charging IC WLC1150– 50 W transmitter with software included– Adaptive foreign object detection (FOD)– Adjustable protection – OVP, OCP, OTP– Graphical utility tool for ease of configuration, debug without code
– ModusToolbox™ Software Library for Infineon Proprietary, Qi Stack

USB-C controllers
and peripherals

Key benefits– High power proprietary charging up to 50 W
– Qi v1.3.x compliant transmitter (MP-A2 and similar)– Integrated USB-PD/PPS sink functionality– Integrated DC-DC controller for fan that enables thermal management– Integrated gate drivers for buck-boost, inverter– Input voltage range: 4.5 - 24 V
– Communication ports: I2C, UART
– Temperature range: -40°C - 105°C– Packing type: tray

Sensors

WBG semiconductors

Powermanagement ICs

Key features

Microcontrollers

Features and benefits

Click here to learn more:
Supportwww.infineon.com/wirelesscharging
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18

Solutions

Wireless charging

Applications

15 W automotive transmitter solution with Infineon’s wireless charging IC WLC1515

Gate-driver ICs

500-950 V MOSFETs

15-300 V MOSFETs

The REF_WLCAUTO_TX15W_C1 MP A13 power transmitter solution board using WLC1515 is a highly integrated, Qi
v1.3 compliant Extended Power Profile (EPP) transmitter design ideal as a scalable platform for automotive in-cabincharger. It can also support basic power profile (BPP), Proprietary power delivery Extensions (PPDE), and custom
protocols. This reference board operates with variable automotive battery input voltage of 9 - 18 V, supporting reverse
polarity protection and auto transients. Its integrated buck-boost controller enables a low EMI fixed frequency modeof operation. On-chip LIN or serial communication interfaces with the Host system for additional functionality.
With an optional external automotive MCU such as TRAVEO™ T2G, it is possible to add AUTOSAR, CAN, and NFC
interface functionality. The solution board supports firmware updates using Serial Wire Debug (SWD) while using theModusToolbox™ and programmer.

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

Key components‒ Wireless charging IC - WLC1515-68LDXS‒ OptiMOS™ automotive MOSFETs‒ OPTIGA™ Trust Charge auto

USB-C controllers
and peripherals
Powermanagement ICs– Qi stack with library support– Fixed frequency operation for low EMI– Configurable gate drivers for EMC– Configurable thresholds for FOD, protections– ModusToolbox™ code examples

WBG semiconductors

Key benefits– Integrated Qi controller– Input voltage range: 4.5 - 24 V (40 V tolerant)– Output power: 15 W Qi EPP free position– Programmable high-side current sense amplifier– Gate drivers for full-bridge inverter– Coil selection control– Integrated buck-boost controller– 150 - 600 kHz switching frequency for synchronous buck-boost– Integrated gate drivers with slew rate and dithering controls– Comprehensive protection: UVLO, OVP, OCP, and OTP– LIN and Host Interface– In-built LIN interface to LIN transceiver– Interface for external MCU over I2C– Configurable firmware registers

Sensors

Key features

Microcontrollers

Features and benefits

Click here to learn more:
Supportwww.infineon.com/wirelesscharging
www.infineon.com/usb-charging-solutions www.infineon.com/optimos
www.infineon.com/wirelesscharging-ics www.infineon.com/gan
www.infineon.com/optiga
19

Applications

Solutions

Wireless charging

Key components for resonant designs for consumer and industrial
Wireless charging product portfolio for resonant

Driver ICs

IRLHS6376PBF, BSZ0909ND, BSZ0910ND, IRLML0030PBF

40 V

IRLML0040

60 V

IRLML0060

80 V

IRL80HS120

100 V

IRL100HS121

150 V

BSZ900N15NS3, BSZ520N15NS3200 V

BSZ900N20NS3, BSZ22DN20NS3, BSZ12DN20NS3

250 V

BSZ42DN25NS3

15-300 V MOSFETs

Products
30 V

500-950 V MOSFETs

Sub-application
MOSFETs**

EiceDRIVER™ 2EDL71, 1EDN7512, 2EDN7524, 2ED2182S06F, 2ED24427N01F, 1EDI60N12AF, 1ED44173N01B

PSoC™ 4 Bluetooth® Low Energy (Bluetooth® Smart): CY8C4248LQI-BL573 (QFN)

AIROC™ Bluetooth® LE & Bluetooth®

CYW20719B2 / CYW20721B2

USB-C and power delivery (PD)

EZ-PD™ PAG1, EZ-PD™ PAG2, EZ-PD™ CCG7S, EZ-PD™ CCG7D, EZ-PD™ CCG3PA, EZ-PD™ CCG3, EZ-PD™ PMG1,
EZ-PD™ barrel connector replacement (BCR)

Voltage regulators

TLE4296G V33, TLE4296G V50, TLE4296-2G V33, TLE4296-2G V50, TLF50211EL, TLE8366EV, TLE8366EV33, TLE8366EV50

Small signal MOSFETs

See the portfolio on our webpage small-signal MOSFETs

Digital isolators

XMC™, AURIX™ MCU and wireless power controller XMC™-SC (including software IP), PSoC™ family 4

MCU + BLE Controller

IGBT discretes andsilicon power diodes

CoolGaN™ GIT HEMT 600 V IGT60R190D1 (HDSOF-8-3)

Microcontroller

Gate-driver ICs

EiceDRIVER™ for CoolGaN™ GIT HEMTs 1EDS5663H, 1EDF5673F, 1EDF5673K
GaN e-mode HEMTsIntelligent powerswitches and modules

Are you searching for a turnkey solution for your application?

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Dedicated system solutions for your application

Sensors

WBG semiconductors

Wireless power has become an important part of our connected lifestyles. Infineon emphasizes the development of
next-generation technologies and standards that allow easy charging without the limitation of wires. What started
with phones will quickly evolve - applications such as tablets, laptops, robots, drones, power tools, handheld gaming
devices, medical devices, infrastructure, and applications around Industry 4.0 will include wireless charging. For more
information, please get in touch with us via www.infineon.com/support to get your customized system solution.

Click here to learn more:** Explore more MOSFET offerings on our webpage

Supportwww.infineon.com/wirelesscharging
www.infineon.com/usb-charging-solutions www.infineon.com/optimos
www.infineon.com/wirelesscharging-ics www.infineon.com/gan
www.infineon.com/optiga
20

Solutions

Battery chargers

Applications

Battery chargers

15-300 V MOSFETs

Charging solutions for battery-powered equipment

500-950 V MOSFETs

Infineon’s solutions for battery chargers are designed to fit the large variety of topologies and power ratings forapplications like e-bike or cordless power tools. Whether the design requires ultra-high efficiency or a cost-performanceoriented implementation, we help you simplify the design process and accelerate time-to-market.

IGBT discretes andsilicon power diodes

Digital isolators

Gate-driver ICs

The REF_ICL8810_116W_BPA uses the PFC-flyback converter topology to design a cost-effective yet efficient charger
solutions with a 116 W power output. ICL8810 forces the peak drain current to follow the shape of the input voltage,
similar to a PFC pre-regulator in boost topology, which allows removing the bulk capacitor. The reference design covers
the full AC input voltage range and supports output voltage range between 30 V to 58 V. The XDP™ XDPS2221 controller
is a highly integrated IC that combines both a multimode PFC controller and a multimode DC-DC hybrid-flyback
controller, offering harmonized operation of the two power stages. The further integration of all gate drivers and a 600 V
high-voltage start-up cell for the initial IC voltage supply enables a low external component count. Infineon’s reference
designs, such as the REF_XDPS2201_170W_BPA2, feature a very wide output voltage and smaller transformer size which
are one of the key advantages of the topology. The ZVS operation of the hybrid flyback topology and the advantages of
CoolGaN™ technology can be combined to design a high-efficient and compact charger. Infineon’s CoolGaN™ portfolio
includes 650 V power transistors in a broad range of different packages and a variety in typical RDS(on).

Key benefits– Wide output voltage range– High efficiency (>90 % for flyback, >94 % for hybrid flyback)– High level of integration– Externally configurable parameters– Inrush current, reverse polarity protection– No auxiliary voltage supply, no PFC stage– Scalable design to support different battery cell configurations– Fewer heatsinks and fanless operation for outdoor use– Ease of design and BOM cost reduction– Flexible system parameterization– Robust operation– Suitable for cost-conscious designs

Microcontrollers

Key features

Intelligent powerswitches and modules

Features and benefits

Application diagram
VIN

PrimaryswitchSRswitchPrimary-side PWM control

LoadswitchVout
Output port

USB-C controllers
and peripherals

AC

DC

SR and/or protocol control

Topology
QR flyback

Product/product family

Package

ICC80QSG

DSO-8

High-voltage MOSFETs

700 V CoolMOS™ P7

SOT-223

Standalone digital controller

XDP™ digital power XDPS2201

DSO-14

Combo digital controller

XDP™ digital power XDPS2221

DSO-14High-voltage switches

600 V CoolMOS™ P7
CoolGaN™ power transistors 650 V

TO-220-FP
MultipleMedium-voltage MOSFETs

OptiMOS™ 5 60 V/80 V/100 V

MultipleMedium-voltage MOSFETs

OptiMOS™ 5 150 V

SuperSO8

AC/DC integrated power stage

CoolSET™ Gen 5

DIP-7
Sensors

Hybrid flyback

Product type
QR flyback controller

WBG semiconductors

Application
Chargers forbattery-powered
applications

Powermanagement ICs

Product portfolio

Click here to learn more:
www.infineon.com/ICC80QSG
www.infineon.com/ICL8810

www.infineon.com/CoolSET-FF

Supportwww.infineon.com/batterychargers
www.infineon.com/XDPS2221

21

Applications

Solutions

USB-C chargers and adapters

USB-C chargers and adapters

15-300 V MOSFETs

Outstanding solution offering for mobile chargers and laptop adapters

Infineon offers a leading portfolio of power controllers, flexible and programmable USB Type-C controllers, highvoltage CoolMOS™ superjunction MOSFETs, medium- and low-voltage OptiMOS™ MOSFETs as well as CoolGaN™
discretes and integrated power stages.

IGBT discretes andsilicon power diodes

Our USB-C reference and demo designs are based on quasi-resonant (QR), zero-voltage switching (ZVS), and hybrid flyback(HFB) operation for different power levels and power density requirements and for single- and dual-output chargers.

Key benefits– Ready-to-use reference designs– Comprehensive offering of power and protocol controllers, high- and low-vol-– Ease-of-use and reduced complexity– Smallest form factor, low RDS(on) and low parasitic capacitances,– High-efficiency designs– Fully programmable USB-C PD port controllers– Configurability and upgradability– Infineon has the largest installed in-house power semiconductor capacity with

– Differentiation and short time to market

Kelvin-source engaged ThinPAK and PQFN packages– Digital controllers enabling high-efficiency designs– Secured supply chain

USB-C controllers
and peripherals

12” wafer production for discretes for maximum supply security– Dedicated supply chain programs to secure capacity and enable flexibility to
demand fluctuations

Microcontrollers

Key features

Intelligent powerswitches and modules

Features and benefits

tage switches and TVS diodes allow customers to source all components froma single supplier– Highly integrated solutions

PrimaryswitchSRswitchLoadswitchVout
Type-C connectorDC

WBG semiconductors

Vin

Power
management ICs

Application diagram

ESD

SR & protocol control

Sensors

Primary-side PWM control

Click here to learn more:
www.infineon.com/USB-PD
www.infineon.com/usb-pd-designs

www.infineon.com/usb-charging-solutions
www.infineon.com/gan

SupportAC

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

USB-C power delivery (USB-PD) has become the standard for charger and adapter solutions. Furthermore, fromsmartphones to laptops, smart speakers to TVs - USB-PD is now the go-to power supply and the enabler of fast
charging. USB-C power delivery (USB-PD) has revolutionized the way we charge our mobile devices, providing
a unified and speedy charging experience. The implementation of USB-C technology has significantly enhanced
the convenience for end-users. In addition, with the incorporation of GaN power transistors and higher switchingfrequencies, it is now possible to produce chargers and adapters that are both compact and lightweight.

22

Recommended products
Functional block

Product category

Flyback converter

High-voltage power Quasi-resonant flyback
devices (Si MOSFETs (QR)
and GaN transistors)

Topology

Product family

Benefits

600 V/700 V/800 V
CoolMOS™ P7– Fast switching speed for improved efficiency and thermals– Reduced gate charge for enhanced light-load efficiency– Optimized gate-to-source voltage (VGS) threshold for lower turn-off

600 V/650 V CoolMOS™ C7– High switching performance enabling highest efficiency– Ease of use level high
– Optimized devices for highest efficiency switched-mode power

losses15-300 V MOSFETs

Applications

Solutions

USB-C chargers and adapters

supplies

QR flyback controller

EZ-PD™ PAG1P/S
EZ-PD™ PAG2P/S

500-950 V MOSFETs

XDPS2201

Gate-driver ICs

Hybrid flyback controller

supports 28 V EPR and SPR

Active-clamp flyback (ACF) IRS25752L
IRS21271S

High-voltage power DCM PFC
devices (Si MOSFETs
and GaN HEMTs)

600 V CoolMOS™ P7

losses

DCM/CCM PFC

CoolGaN™
Transistors 650 V/700 V

Boost diodeDCM/PFC

650 V Rapid 1 diodes

Controller

PFC/LLC combo

IDP2308

Controller

PFC/HFB combo

XDPS2221

XDPS2222– Highest efficiency contribution via less parasitic parameter– Space saving with SMD smaller package– Low conduction losses– Digital multimode PFC and LLC combined controller with a floating– High-side driver and a startup cell
– Comprehensive and configurable protection features– Wide set of configurable parameters– Digital multimode PFC and HFB combined controller– High-side driver and a 600 V startup cell
– Integrated gate drivers supporting GaN switches– Configurability for protections and system performance– Digital multimode PFC and HFB combined controller– High-side driver and a 600 V startup cell– Integrated gate drivers

Intelligent powerswitches and modules

PFC DC-DC

Microcontrollers

Gate-driver IC– ACF topology supported– Leakage energy recycling and ZVS switching– High-side gate driver enables active clamp mode of operation– Cost-effective, 600 V, single-channel driver in SOT23 package– High-side gate driver enables active clamp mode of operation– 600 V, single-channel driver with over-current protection (OCP)– Fast switching speed for improved efficiency– Reduced gate charge for enhanced light load efficiency– Optimized gate-to-source voltage (VGS) threshold for lower turn-off

supporting GaN switches– Configurability for protections andsystem performance– Supports extra wide output voltage range with MFIO switchingdepending on output voltage– Fast switching speed for improved efficiency and thermals– Reduced gate charge for enhanced light load efficiency– Optimized gate-to-source voltage (VGS) threshold for lower turn-off

CoolGaN™ integrated
power stages– Highest efficiency and highest power density– Isolated gate driver integrated– Isolated gate driver, up to 14 A, 100 ns propagation delay

Gate-driver IC

HB LLC

EiceDRIVER™ Compact:
1EDI60N12AF,
1ED3124MU12F

Low-voltage
MOSFETs

Synchronous rectification

OptiMOS™ PD 60-150 V

Control ICs

Synchronous rectification

EZ-PD™ PAG1S
EZ-PD™ PAG2S

Protocol controller USB-C ICs

Protocol controller

EZ-PD™ PAG1S– Low conduction losses, reduced overshoot– Adapter-oriented synchronous rectification MOSFETs– Integration of synchronous rectification and PD controller– Configurable protection, like OTP, OCP, OVP, UVP, short circuit, etc.
– Integration of synchronous rectification and PD3.1 controller– Configurable protection, like OTP, OCP, OVP, UVP, short circuit, etc.
– Supports USB PD 2.0, PD 3.1 with PPS, QC4+, QC 4.0, QC 3.0,QC 2.0,
Samsung AFC, Apple charging, and BC v1.2 charging protocols

EZ-PD™ PAG2S
PD controllerPowermanagement ICs

losses

WBG semiconductors

Synchronousrectifier600 V CoolMOS™ P7

EZ-PD™ CCG3PA-NFET– Supports PD3.1 28 V EPR and SPR– Supports USB PD 3.1 with Programmable Power Supply (PPS)– Independent constant current (CC) and constant voltage (CV)Sensors

High-voltage power HB LLC
devices (Si MOSFETs
and GaN HEMTs)

Digital isolators

CoolGaN™ Transistors
650 V/700 V

and up to 2 kV ESD protection– Reduced gate charge for enhanced light-load efficiency– Lower hysteresis loss
– Highest efficiency– Highest power density– Asymmetrical half-bridge ZVS control to maximize efficiency– Supports a wide range of configurable parameters– Supports ultra-high power density (20 W/in3) design– Secondary-side-controlled flyback solution– Dual-chip flyback solution with integrated SR+PD controller– Secondary-side-controlled flyback solution– Dual-chip flyback solution with integrated SR+PD controller

IGBT discretes andsilicon power diodes

Controller

Flyback (QR, ZVS, ACF,
HFB)

– Robustness and reliability with integrated robust fast body diodeUSB-C controllers
and peripherals

Active-clamp flyback (ACF) 600 V CoolMOS™ PFD7
Hybrid flyback (HFB)

modes– Configurable OVP, OCP, and OTP– Integrates NFET gate driver to drive the load switch 64 kB flash

Multi-port controller

EZ-PD™ CCG7DC

SupportmemoryEZ-PD™ CCG3PA– Supports USB PD 3.1 with PPS, QC4, Apple 2.4 A charging, AFC,
– BC1.2 etc.
– Supports 1C and 1A port
– 64 kB flash memory– Integrates 2 USB-C PD controllers + 2 DC-DC controllers in one
single chip

– Supports latest USB-C PD v3.0 with PPS, QC4+, QC4.0, Samsung
AFC, Apple 2.4A, Cv1.2– Configurable switching frequency of 150 kHz - 600 kHz– Arm® Cortex®-M0 with flash allows users to implement custom
features

Connector

ESD

ESD protection

Multi-purpose diodes for
ESD protection– Small packaging to support minimum board space consumption– High linearity - reducing harmonic generation/enabling suppression EMC problems– Exceptional quality and reliability

Click here to learn more:
www.infineon.com/USB-PD
www.infineon.com/usb-pd-designs

www.infineon.com/usb-charging-solutions
www.infineon.com/gan
23

Applications

Solutions

Condition monitoring andpredictive maintenance15-300 V MOSFETs

Condition monitoringand predictive maintenancepredict machine failures
before they happen

Microcontrollers

Detect and fix defects at
an early stage and use
advanced analytics to

Predictive

Additional
businessvalue

USB-C controllers
and peripherals

Enabled bycondition
monitoring

Intelligent powerswitches and modules

Infineon’s sensors, microcontrollers, connectivity, security and memory solutions offer all you need to leverage
predictive maintenance’s full potential. Thanks to our partner network, you can use advanced analytics and artificial
intelligence to predict machine failures before they happen or to anticipate maintenance needs before they become
urgent – on the Edge or in the Cloud.

Fix the machines whenthe equipment is down
or have scheduled
maintenance in placePowermanagement ICs

Proactive

Periodic

Traditional
approach

WBG semiconductors

Reactive- Reduced downtime- Reduced maintenance costs- Real-time performance insights and failure pattern data
- Edge and Cloud integration- Implementation support- Partner infrastructure- Increased transparency over operations- Opportunity for value-adding services (e.g. maintenance)

Sensors

Benefits

Digital isolators

Reliably and continuously monitoring the condition of a single asset or a system is the base for predictive maintenance.
As one of the most innovative maintenance schemes on the market, it offers numerous benefits to businesses
across various industries - especially when critical operational equipment is involved. Predicting the next needed
maintenance based on real-time asset health data can reduce unexpected downtime and save costs. It enhances
equipment reliability and machinery longevity. Ensuring optimal working conditions for a piece of equipment leads tohigher safety and increased efficiency in operations. The collected data processed by the algorithms allows data-driven
decision-making and optimized asset performance management.

IGBT discretes andsilicon power diodes

Predictive maintenance is a game-changing offering that empowers businesses to manage assets and devices
proactively. By leveraging advanced hardware technologies for data collection and condition monitoring combinedwith predictive analytics dashboards, you can revolutionize after-sales services & asset performance management.
Our solution ensures minimized downtime, optimized maintenance schedules, and operational efficiency, leading to
unparalleled customer satisfaction and business success.

Gate-driver ICs

500-950 V MOSFETs

Cutting-edge predictive maintenance solutions enable assets performancetracking in real-time and transform the maintenance approach

Click here to learn more:
www.infineon.com/sensor
www.infineon.com/c-hvac

www.infineon.com/industrial-drives

Supportwww.infineon.com/predictivemaintenancewww.infineon.com/mems-for-automotive

24

Applications

Solutions

Condition monitoring andpredictive maintenanceApplication diagram
Motor control - fans, compressor, and blower(Digital) motor controller

M

Auxiliary power
supplyDigital power
solutionIntelligent power module

M

Power supply
current sensing

Power supply
parameter sensing

Power supply
voltage sensing

Power supply
fault detection

Building management system
Wired connection

Wirelesstransceiver

MemoryEmbedded security

Microcontroller

Condition monitoring block

Airflow

Air distribution

PipingFilter

Flaps
control

ValvesCondensor
coil

Temperature
feedback

JointsEvaporator
coil

Gate-driver ICs

Sound anomaly detection

Digital isolators

Cloud computing

Motor vibration
monitoring

Coils

IGBT discretes andsilicon power diodes

Edge computing

Motor current
sensing

Airflowmonitoring

Indoor Air
quality

Leakagedetection

Obstruction
sensing

Obstruction
sensingVibration
monitoring

Sub-system

Functional block

Predictive maintenance blockIntelligent powerswitches and modules

Predictive maintenanceMotor position
detection

500-950 V MOSFETs

Synchronousrectification

Discrete full bridgeXENSIV™ Predictive Maintenance Evaluation Kit
Our XENSIV™ Predictive Maintenance Evaluation Kit empowers clients to harness the power of predictive maintenance.
It is a comprehensive kit, designed to give businesses a deeper understanding of the benefits and potential of predictive
maintenance’s different abling blocks and components. The XENSIV™ Predictive Maintenance Evaluation Kit lets you
quickly and efficiently evaluate various condition monitoring and predictive maintenance use cases. It utilizes Infineon’s
XENSIV™ sensor portfolio along with the FreeRTOS-enabled XMC™ microcontroller to monitor the condition of any crucial
element such as filters, compressors, motors, or fans - even in legacy systems. Based on collected sensor data, e.g., ofcurrent consumption, airflow, and other system parameters, combined with the power of algorithms and deep learningtechniques, system failures can be detected. Solution templates and a FreeRTOS-enabled software stack deliver a full
end-to-end solution from the edge to the cloud.

Key features

Key benefits– Extension for the XMC4700 XMC™ Relax Kit– Full software support of the FreeRTOS kernel– AWS Cloud integration– Full AWS CloudFormation template and software application stack– On-board Wi-Fi and ethernet connectivity– mikroBUS™ ClickBoard interface for extending connectivity– XENSIV™ sensor satellite boards with a broad range of sensors for data

– Current monitoring (up to 120 A), e.g. for overall current anomaly detection– Vibration and position sensing, e.g., for drives and compressor– Airflow and pressure measurement, e.g., for filters– Open/closed lid detection, e.g., for detecting status of service lids
– Hall speed sensors, e.g., for blocked fan and fan speed monitoring– Sound anomaly detection, e.g., for gears and joints

WBG semiconductors

Features and benefits

Microcontrollers

DC-DC main stage

Gate driver

USB-C controllers
and peripherals

Power factor
correction (PFC)

15-300 V MOSFETs

M

RectifierPowermanagement ICs

Power management

Sensors

collection and condition monitoring– Multi-account registration support with OPTIGA™ Trust M
Click here to learn more:
www.infineon.com/sensor
www.infineon.com/c-hvac

www.infineon.com/industrial-drives

Supportwww.infineon.com/predictivemaintenancewww.infineon.com/mems-for-automotive

25

OPTIGA™

Control

XMC™ microcontrollers

Magnetic current sensor for AC and DC measurements in industrial
applications with an analog interface and dual fast over-current
detection outputs

XENSIV™ TLI493D-W2BW 3D magnetic sensor

Small WLB-5 package with low current consumption of 7 nA in a power-down mode for compact system designs

XENSIV™ IM69D128S MEMS microphone

Ultra-low power digital XENSIV™ MEMS microphone for building automation and IoT devices with high sensitivity

XENSIV™ TLE4997E Hall sensor

Hall sensor for highly accurate rotation and position detection, ideallysuited to analog-to-digital (A/D) conversion with the supply voltage
as a reference

XENSIV™ TLE4964-3M Hall effect magnetic
switchHall effect switch dedicated for position detection applications highly
accurate applications with superior supply voltage capability

XENSIV™ TLI4966G double Hall switch

Double Hall switch with two output pins for industrial applications
with a rotating pole wheel

OPTIGA™ Trust M

A high-end security solution that provides an anchor of trust forconnecting IoT devices to the cloud

OPTIGA™ Trust M Express

Offered with CIRRENT™ Cloud ID – Infineon's cloud service automates
IoT device certificate registration and device provisioning in the
product cloud at scale with zero manual intervention

XMC4800 microcontroller

32-bit first-ever EtherCAT® node on an ARM® Cortex®-M microcontroller with on-chip flash and analog/mixed-signal capabilities

XMC4700 microcontroller

32-bit optimized solution to meet the performance challenges oftoday's embedded control applications, ideal for motor control and
SMPS
Dual-core Arm® Cortex®-M4 and Cortex-M0+ architecture with ultralow power consumption purpose-built for IoT applications

PSoC™ 4 series

32-bit microcontroller tackling some of the complex portions ofembedded system design, making it easier and more flexible

AIROC™ Wi-Fi + Bluetooth® Combos

IEEE 802.11a/b/g/n/ac/ax Wi-Fi and Bluetooth® 5.2 in a single-chip forsmall-factor IoT designs

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Wireless connectivity

500-950 V MOSFETs

XENSIV™ TLI4971 magnetic current sensor

PSoC™ microcontrollers PSoC™ 6 series

Connectivity

Benefits
Ultrasmall waterproof pressure sensor, environmentally protectedagainst water (IPx8), dust and humidity, ideal for harsh environments

IGBT discretes andsilicon power diodes

Security

Product family
XENSIV™ DPS368 pressure sensor

Gate-driver ICs

Product category
XENSIV™ sensors

Intelligent powerswitches and modules

Functional block
Sensing

Digital isolators

Recommended products portfolio

15-300 V MOSFETs

Applications

Solutions

Condition monitoring andpredictive maintenance

Click here to learn more:
www.infineon.com/sensor
www.infineon.com/c-hvac

www.infineon.com/industrial-drives

Supportwww.infineon.com/predictivemaintenancewww.infineon.com/mems-for-automotive

26

Battery protection

Solutions

Battery management systems

Applications

Battery protection

15-300 V MOSFETs

Solutions that allow easy design-in ensuring safe charging/discharging

500-950 V MOSFETs

The high-power density of lithium-ion batteries has made them very popular. However, the unstable behavior of lithiumion cells under critical conditions requires them to be handled with care. That means a battery management system(BMS) is needed to monitor the battery state and ensure safe operation. BMS is typically equipped with an electronic
switch that disconnects the battery from the charge or load under critical conditions that can lead to dangerous
reactions. A battery protection unit (BPU) prevents possible damage to the battery cells and the failure of the battery.

Digital isolators

Gate-driver ICs

Such critical conditions include:‒ Over-charge that occurs when the battery is charged over the allowed maximum capacity‒ High and low temperature when the internal temperature of the battery cells exceeds their safe operationaltemperature range‒ Over-discharge when the battery is discharged under the allowed minimum capacity‒ Overcurrent when the battery is exposed to a short circuit condition or a high inrush turn-on current‒ Reverse polarity when the battery terminals are wrongly plugged into the device

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Failing to disconnect the battery during such conditions can lead to the following problems:‒ Thermal runaway often due to over-charging or overheating of the battery. The overheating event can be due toa rise in the ambient temperature or due to charging/discharging the batteries with high current rates. Thermal
runaway damages the battery cells and can lead to fires‒ Death of the cell often due to the discharge of batteries below its specified thresholds‒ Damage of load device often due to either improper inrush current management or reverse polarity

Microcontrollers

In order to prevent these failures, Infineon offers a wide range of battery protection solutions that increase the lifetimeand efficiency of lithium-ion batteries under stressful conditions.

– Higher performance with lower RDS(on) and wider safe operating area (SOA)– Cheaper solutions with a more compact bill of material and more effective parallelization solutions– Short circuit protection with higher peak current rates to withstand higher current values– Turn-on and turn-off solutions tailored to applications needs– Up to 600 V MOSFET protection solutions (including single- and multi-module)

Application diagram

Battery protection unit
R Limit
ChargeFET

Discharge
FET

Current
Limit
FET

F1

+VE
Sensors
ᴼC+

Protection
switchcontroller

-

+
-

PMIC/
regulator
LDO

Digitalisolator

CAN
MicrocontrollerFlashmemoryLINSecurityComm. Port

Cell Pack-

Cell monitoring
and balancing
unit (CMB)

Support+Balancingswitches

Current
sensor+Powermanagement ICs

Key benefits– RDS(on) and safe operating area (SOA)– Compact bill of material (BOM)– Short circuit protection– Turn-on and turn-off capabilities– All voltage class solutions

WBG semiconductors

Key features

USB-C controllers
and peripherals

Features and benefits

BluetoothBattery monitoring and control unit (BMU)-VE

Click here to learn more:
www.infineon.com/battery-protection
27

Applications

Solutions

Battery protection

Product portfolio

96 V

144 V

IRFHS9301-30 V, 37 mΩ,PQFN 2x2

Pre-charge MOSFET

BSC084P03NS3 G-30 V, 8.4 mΩ,SuperSO8

IRFH9310-30 V, 4.6 mΩ,SuperSO8

SPD50P03L G-30 V, 7.0 mΩ,DPAK

BSZ180P03NS3E G-30 V, 18 mΩ,PQFN 3.3x3.3

BSZ120P03NS3 G-30 V, 12 mΩ,PQFN 3.3x3.3

Charge anddischarge MOSFET

IST006N04NM6
40 V, 0.6 mΩ,sTOLL

PB012N04NF2S
40 V, 1.25 mΩ,
D2PAK

ISC007N04NM6
40 V, 0.7 mΩ,SuperSO8

IQE013N04LM6CG
40 V, 1.35 mΩ,
PQFN 3.3x3.3 SourceDown Center-Gate

BSZ018N04LS6
40 V, 1.8 mΩ,PQFN 3.3x3.3

Balancing MOSFET

ISK024NE2LM5
25 V, 2.4 mΩ,
PQFN 2x2

IRLML6244
20 V, 21 mΩ,SOT-23

IRLHS6376
30 V, 63 mΩ,
PQFN 2x2-Dual

IRLML2244-20 V, 54 mΩ,SOT-23

IRFHS9301-30 V, 37 mΩ,PQFN 2x2

Pre-charge MOSFETISC240P06LM-60 V, 24 mΩ,SuperSO8

ISC800P06LM-60 V, 80 mΩ,SuperSO8

IPD650P06NM-60 V, 65 mΩ,DPAK

ISZ810P07LM-60 V, 81 mΩ,PQFN 3.3x3.3

ISP25DP06LM-60 V, 125 mΩ,SOT-223

Charge anddischarge MOSFET

IPT007N06N
60 V, 0.75 mΩ,TOLL

IPTG007N06N
60 V, 0.75 mΩ,TOLG

IPF010N06NF2S
60 V, 1.05 mΩ,
D2PAK 7pin

IPT008N06NM5LF
60 V, 0.8 mΩ,D2PAK

IST011N06NM5
60 V, 1.1 mΩ,sTOLL

Balancing MOSFET

ISK024NE2LM5
25 V, 2.4 mΩ,
PQFN 2x2

IRLML6244
20 V, 21 mΩ,SOT-23

IRLHS6376
30 V, 63 mΩ,
PQFN 2x2-Dual

IRLML2244-20 V, 54 mΩ,SOT-23

IRFHS9301-30 V, 37 mΩ,PQFN 2x2

Pre-charge MOSFETISC240P06LM-60 V, 24 mΩ,SuperSO8

ISC800P06LM-60 V, 80 mΩ,SuperSO8

IPD650P06NM-60 V, 65 mΩ,DPAK

ISZ810P07LM-60 V, 81 mΩ,PQFN 3.3x3.3

ISP25DP06LM-60 V, 125 mΩ,SOT-223

Charge anddischarge MOSFET

IPT012N08N5
80 V, 1.2 mΩ,
TOLL

IPTC011N08NM5
80 V, 1.1 mΩ,TOLT

IPT010N08NM5
80 V, 1.0 mΩ,TOLT

IPB016N08NF2S
80 V, 1.65 mΩ,
D2PAK

IPT013N08NM5LF
80 V, 1.3 mΩ,sTOLL

Balancing MOSFET

ISK024NE2LM5
25 V, 2.4 mΩ,
PQFN 2x2

IRLML6244
20 V, 21 mΩ,SOT-23

IRLHS6376
30 V, 63 mΩ,
PQFN 2x2-Dual

IRLML2244-20 V, 54 mΩ,SOT-23

IRFHS9301-30 V, 37 mΩ,PQFN 2x2

Pre-charge MOSFET

ISC750P10LM*-100 V, 75 mΩ,SuperSO8

IPD19DP10NM-100 V, 186 mΩ,DPAK

ISZ24DP10LM*-100 V, 245 mΩ,
PQFN 3.3x3.3

ISP16DP10LM-100 V, 250 mΩ,SOT-223

BSP322P-100 V, 800 mΩ,SOT-223

Charge anddischarge MOSFET

IPT020N13NM6
135 V, 2 mΩ,TOLL

IPT039N15N5150 V, 3.9 mΩ,TOLL

IPB044N15N5150 V, 4.4 mΩ,
D2PAK 7pin

IPB048N15N5150 V, 4.8 mΩ,D2PAK

IPT111N20NFD
200 V, 11.1 mΩ,
TOLL

Balancing MOSFET

ISK024NE2LM5
25 V, 2.4 mΩ,
PQFN 2x2

IRLML6244
20 V, 21 mΩ,SOT-23

IRLHS6376
30 V, 63 mΩ,
PQFN 2x2-Dual

IRLML2244-20 V, 54 mΩ,SOT-23

IRFHS9301-30 V, 37 mΩ,PQFN 2x2

Pre-charge MOSFET

ISC16DP15LM-150 V, 160 mΩ,SuperSO8

ISZ56DP15LM-150 V, 560 mΩ,PQFN 3.3x3.3

ISZ75DP15LM-150 V, 750 mΩ,PQFN 3.3x3.3

IPD42DP15LM-150 V, 420 mΩ,DPAK

ISP14EP15LM-150 V, 1380 mΩ,SOT-223

Charge anddischarge MOSFET

IPT039N15N5150 V, 3.9 mΩ,TOLL

IPB044N15N5150 V, 4.4 mΩ,
D2PAK 7pin

IPB048N15N5150 V, 4.8 mΩ,D2PAK

IPB060N15N5150 V, 6 mΩ,
D2PAK 7-pin

IPT111N20NFD
200 V, 11.1 mΩ,
TOLL

Balancing MOSFET

ISK024NE2LM5
25 V, 2.4 mΩ,
PQFN 2x2

IRLML6244
20 V, 21 mΩ,SOT-23

IRLHS6376
30 V, 63 mΩ,
PQFN 2x2-Dual

IRLML2244-20 V, 54 mΩ,SOT-23

IRFHS9301-30 V, 37 mΩ,PQFN 2x2

Pre-charge MOSFET

ISC16DP15LM-150 V, 160 mΩ,SuperSO8

ISZ56DP15LM-150 V, 560 mΩ,PQFN 3.3x3.3

ISZ75DP15LM-150 V, 750 mΩ,PQFN 3.3x3.3

IPD42DP15LM-150 V, 420 mΩ,DPAK

ISP14EP15LM-150 V, 1380 mΩ,SOT-223

Charge anddischarge MOSFET

IPT129N20NM6
200 V, 12.9 mΩ,TOLL

IPTG111N20NM3FD
200 V, 11.1 mΩ,TOLG

IPT210N25NFD
250 V, 21.0 mΩ,TOLL

IPTG210N25NM3FD
250 V, 11.1 mΩ,TOLG

IPB107N20N3 G
200 V, 10.7 mΩ,D2PAKBalancing MOSFET

ISK024NE2LM5
25 V, 2.4 mΩ,
PQFN 2x2

IRLML6244
20 V, 21 mΩ,SOT-23

IRLHS6376
30 V, 63 mΩ,
PQFN 2x2-Dual

IRLML2244-20 V, 54 mΩ,SOT-23

IRFHS9301-30 V, 37 mΩ,PQFN 2x2

Pre-charge MOSFETBSP317P-250 V, 4000 mΩ,SOT-223

BSP92P-250 V, 12000 mΩ,SOT-223

BSR92P-250 V, 12000 mΩ,SC59

BSS192P-250 V, 12000 mΩ,
SOT-8915-300 V MOSFETs

IRLML2244-20 V, 54 mΩ,SOT-23500-950 V MOSFETs

IRLHS6376
30 V, 63 mΩ,
PQFN 2x2-Dual

Gate-driver ICs

IRLML6244
20 V, 21 mΩ,SOT-23

Digital isolators

ISK024NE2LM5
25 V, 2.4 mΩ,
PQFN 2x2

IGBT discretes andsilicon power diodes

Balancing MOSFETIntelligent powerswitches and modules

BSZ0500NSIATMA1
30 V, 1.5 mΩ,
PQFN 3.3x3.3

Microcontrollers

IQE008N03LM5CG
30 V, 0.85 mΩ,
PQFN 3.3x3.3 SourceDown Center-Gate

USB-C controllers
and peripherals

72 V

BSC005N03LS5I
30 V, 0.55 mΩ,SuperSO8

Power
management ICs

48 V

PB012N04NF2S
40 V, 1.25 mΩ
D2PAK

WBG semiconductors

36 V

Recommended power MOSFETs
IST006N04NM6
40 V, 0.6 mΩ,sTOLL

Click here to learn more:
www.infineon.com/battery-protection

Support24 V

Application
Charge anddischarge MOSFET

Sensors

Battery voltage
18 V

28

Solutions

Battery protection

CVBAT

VBAT

VCP

CCPHL

CPH

CPL

Low
ohmic
path
GA

VDD

RG

CVDD

15-300 V MOSFETs

5 V or
3.3 V

CVCP

Applications

Gate drivers

RGS
SA

Microcontroller

RProt

ADC

CSN
SCLK
MOSI
MISO
INTERRUPTENABLESAFESTATEN

Capacitor
pre-charge
path

2ED4820-EM

GB

RG

500-950 V MOSFETs

48 V
Battery
cells

GPIO
GPIO
GPIO
GPIO
GPIO
GPIO
GPIO

RGS
SB

CSO

RFiltCSO
CFiltCSO
RPreChRFiltSh
ISN

CFiltSh
ISP

RFiltSh

LOAD(s)
AGND

GND

EP

Freewheel.
diodeGate-driver ICs

Shunt

CPGND

IGBT discretes andsilicon power diodes

Digital isolators

Main reasons to use 2ED4820-EM in dependable 48 V power supplies‒ Faster reaction time (~ 10 µs)‒ Integrated bidirectional high or low side current sense amplifier‒ High current source or sink support‒ Robust against under-/overvoltage in the board-net‒ Flexible configuration of protection features plus the accessibility of diagnosis information via SPIIntelligent powerswitches and modules

Solid state isolators

Microcontrollers

Coreless transformer isolators provide galvanically isolated gate drive for a broad range of MOSFET and IGBT
switches in SSR applications
Solid state isolators (SSI) enable the ability to create custom solid state relays capable of controlling loads in excess
of 1000 V and 100 A. The CT-based isolators enable energy transfer across the isolation barrier capable of driving
large MOSFET or IGBT’s without the added circuitry of a power supply on the isolated side. The innovative protection
features enable the design of reliable and robust Solid State Relays.

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Features‒ Solid state isolators using Infineon’s coreless-transformer technology‒ No isolated gate bias supply required for gate driving‒ Perfect match for CoolMOS™, OptiMOS™, and TRENCHSTOP™ IGBT
‒ Low power, large input voltage range from 2.6 to 3.5 V (internally clamped)‒ High-impedance, CMOS input (buffered variants)‒ High output voltage up to 18 V - no series or parallel configuration required for powerful gate driving‒ High output peak current of 185 µA (direct drive variants) or 400 mA (buffered variants)‒ Fast turn-off for safe switches’ SOA operation‒ Temperature sensor and current sensor protection inputs‒ Latch-off in case of a failure event (overcurrent or overtemperature)‒ Dynamic Miller clamping protection‒ Wide-body package with high creepage and clearance for UL 1577 (planned) and reinforced isolation according toIEC 60747-17 (planned)

C3
R1

IN

MC

T1

D2

Support

3.3 V

D1

OUT

C1

Rsh

GND2
GND1

TS/CS
C4

H3

T3
C3

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www.infineon.com/battery-protection29

TLE9012DQU – Li-ion battery monitoring and balancing IC

500-950 V MOSFETs
Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

Features‒ Voltage monitoring of up to 12 battery cells connected in series‒ Hot plugging support‒ Dedicated 16-bit delta-sigma ADC for each cell with selectable measurement mode
‒ High accuracy measurement for SOC and SOH calculation‒ Integrated stress sensor with digital compensation algorithm and temperature-compensatedmeasurements‒ Secondary ADC with the same averaging filter characteristics as an advanced end-to-end safetymechanism‒ Five temperature measurement channels for external NTCs
‒ Internal temperature sensors‒ Integrated balancing switch allows up to 200 mA balancing current‒ Differential robust serial 2 Mbit/s communication interface‒ Additional four GPIO pins to e.g., connect an external EEPROM‒ Internal round-robin cycle routine triggers the majority of diagnostics mechanisms– Automatic balancing over- and undercurrent detection scheme– Automatic open load and open wire detection scheme– Automatic NTC measurement unit monitoring scheme‒ End to end CRC secured iso UART/UART communication‒ Emergency mode for communication‒ ISO 26262 safety element out of context for safety requirements up to‒ Automotive safety integrity level D‒ Green product (RoHS compliant)Gate-driver ICs

Dedicated cell monitoring controllers are being used to keep lithium-ion cells within their allowed operational ranges
regarding voltages, currents, and temperatures. They monitor the state of each cell according to pre-adjusted voltages andtemperatures using high-precision ADCs. Synchronizing the distributed measurements across all cells inside a battery is key
to achieving the best possible insights into the battery’s dis-/charging state (SOD/SOC) and overall battery health (SOH). The
critical battery state assessment becomes less precise if these measurements are spread across wider time windows and if
the measurement accuracy for each parameter is not high enough. A robust high-speed communication link across multiple
daisy-chained monitoring devices supports complex cell topologies for a battery. For additional robustness, the daisy-chaining
realizes a redundant ring, which keeps communication up between all connected ICs in case of a broken link. CRC-protected
data frames complement communication robustness. To achieve extremely low-power dedicated housekeeping functions
such as periodically scheduled cell measurements and state analysis required for functional safety, the cell controller canperform independently from the master controller of the BMS. Safety features for signaling over-/undervoltage, thermal stress,
etc., including emergency alarms, are triggered autonomously. When the number of cells increases, a reliable transfer of
information from the cell balancing IC to the BMS controller becomes very important. Digital isolators can be used to ensurethat the right data is transferred reliably by isolating the low-voltage side (BMS controller) from the high-voltage battery side.

Digital isolators

Optimize system performance by cell balancing and monitoring
key battery parameters

IGBT discretes andsilicon power diodes

Battery monitoring and control

15-300 V MOSFETs

Applications

Solutions

Battery monitoring and control

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Supportwww.infineon.com/battery-monitoring
30

Solutions

Battery monitoring and control

Applications

TLE9015QU – BMS transceiver IC - UART to iso UART

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

15-300 V MOSFETs

Features‒ General– Two UART ports for serial communication to host microcontroller– Two iso UART interfaces for communication to other BMS ICs– 2 Mbit/s data rate for fast communication– Fully transparent communication scheme from UART to iso UART
– Ring mode topology compatible‒ Communication ports– Integrated internal logic to minimize pin count on the UART side
– Differential current edge triggered iso UART communication interface– High robustness against external noise‒ General purpose error pin– Two external fault inputs (EMM and ERRQ_ext)– Latching error output pin to trigger external microcontroller‒ Supporting diagnosis features

IGBT discretes andsilicon power diodes– Internal supply monitoring– Green product (RoHS compliant)Application diagram

iso UARTIntelligent powerswitches and modules

Normal "master-on-top (MOT)" connectivity+

TLE9012Microcontrollers

iso UART

iso UART

TLE9012Batterystack

iso UART

TLE9015
iso UART

iso UART

USB-C controllers
and peripherals

iso UART
UART

Battery
management
controller

TLE9012
iso UARTPower
management ICs

iso UART

TLE9012
iso UART
Batterystack

iso UARTWBG semiconductors

iso UART

TLE9012-

Sensors

Optional "redundant ring" connectivity(e.g., broken wire protection)

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Supportwww.infineon.com/battery-monitoring
31

Applications

Solutions

Battery monitoring and control

Digital isolators for battery monitoring
Channel configuration 1)

Input thresholds

Default output state

2 forward
0 reverse(2+0)

Variable(CMOS)Low

VDE 0884-11
VDE 0844-17

2DIB1401F
2DIB0410F

High

1 forward
1 reverse(1+1)

IEC 62368-1
IEC 60601-1
IEC 61010-1
GB4943.1Low
High

2 forward
0 reverse(2+0)

2DIB0411F
2DIB1410F

Fixed
(TTL)

Low
High

1 forward
1 reverse
(1+1)

Low
High

Gate-driver ICs

2DIB1411F

Package
PG-DSO-8
5 x 4 mm15-300 V MOSFETs

2DIB1400F

Safety certifications
UL1577 (Ed. 5)

500-950 V MOSFETs

2DIB0401F

Isolation ring
VISO=3000 VRMS
(UL1577 Ed. 5)

PsoC™ 4700 family
Sense anything

PsoC™ 4700S
On-chip
Bluetooth® Low energy
PsoC™ 4500S

PsoC™ 4200 family
Programmable digital

IGBT discretes andsilicon power diodes

With 5th generation
CAPSENSE™ technology
Inductive and capacitive
sensing

PsoC™ 4200BL

PsoC™ 4200

PsoC™ 4200DS

PsoC™ 4200M

PsoC™ 4200L

Divide and square-root
compute accelerators

PsoC™ 4100PS

PsoC™ 4100S

PsoC™ 4100S
Plus

PsoC™ 4100S
Max

Intelligent analog features plus
programmable digital blocks,
USB 2.0, CAN

PsoC™ 4100M

PsoC™ 4100BL

Entry-level features plus
programmable analog blocks
up to 1-Msps ADC

PsoC™ 4100

PsoC™ 4000

Entry-level family withCAPSENSE™

PsoC™ 4000S

Microcontrollers

PsoC™ 4100 family
Intelligent analog

PsoC™ 4000 family
Entry-level

Digital isolators

Microcontrollers for BMS

USB-C controllers
and peripherals

Flash capacity and features

Rich set of customization options

Effortless implementation

Powermanagement ICs

Battery security and authentication
OPTIGA™ Authenticate S provides enhanced device authentication to protect against counterfeits
Security to rely on– Full turnkey solution – no security know-how required – Enhanced HW security with an extended key length– Full system integration support including embedded – Asymmetric cryptography– Protection against reverse engineering
software, host software and advanced ecosystem– Provisioning in a common criteria certified environsupport tools

WBG semiconductors

ment

Sensors– 4 authentication modes– 4 separate life cycle counters to prevent manipulation– 3 temperature ranges– 2 communication profiles– 3 sets of memory

Intelligent powerswitches and modules

Part number
2DIB0400F

Click here to learn more:

1)Certifications planned

Supportwww.infineon.com/battery-monitoring
32

Solutions

Class D audio

At Infineon, we manufacture power-efficient class D audio amplifier solutions that maintain best-in-class audio quality,
without heating up the surroundings. Our amplifier solutions help you design robust and flexible products that meetthe needs of your customers and the market. Choose from our high-performance class D audio amplifier solutions fromthe high-efficiency high power-density multi-chip modules (MCM) to the highly scalable driver and power MOSFET
combinations (for a full portfolio, see Audio amplifier ICs).

‒ Multiroom systems‒ Audio hub‒ Sound bar subwoofers‒ Home theater systems

Car & marine audio
applications‒ Audio systems‒ Touring amplifiers‒ Active speakers‒ Public announcement‒ After-market car audio‒ Marine audio‒ Motorcycle audio

Digital isolators

Professional audio
applications

Intelligent powerswitches and modules

Home audio
applications

Fast
time to market

IGBT discretes andsilicon power diodes

Designfreedom70-100 V systems‒ Music instrument amplifiersHome audio
Modern home audio products vary in shape, size, and configuration, but a common requirement is a great sound incombination with outstanding industrial and acoustic design. Infineon’s high performance class D audio amplifier
solutions allow the design of new innovative and great-sounding home audio products in form factors and shapes thatwere previously unthinkable.

MA53x2
multi-chip-moduleclass D amplifier IC

Battery power unit

SensorsMA53x2
multi-chip-moduleclass D amplifier IC

Solution specification
Number of audio channels:
2 singel-ended load (SE) and 1 BTL channel
Peak power output: 2x200 W at 4 Ω, 10% THD
and 400 W at 2 Ω, 10% THD
Featured audio ICs: MA5302MS, MA5332MS,
MA5342MSWBG semiconductors

Bluetooth®

Powermanagement ICs

Solution example: 2.1 configuration (2xBTL + 1xPBTL)

Microcontrollers

Maximized
output power

USB-C controllers
and peripherals

Maximized
power efficiency

Gate-driver ICs

Design with Infineon’s solutions to benefit from:500-950 V MOSFETs

No compromise on quality – products for exceptional
audio performance

15-300 V MOSFETs

Applications

Class D audio

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Supportwww.infineon.com/merus
www.infineon.com/audio
33

Solution example: public announcement 70-100 V system
Step-downtransformer
Analog
input

HPF
&
ATT

IRS2452AM
andMOSFET
Speaker (4/8 Ω)

Solution specification
Number of channels: 2 half-bridge channels
Peak power output: 500 W, 70 VRMS/100 VRMS, 1% THD‒ Featured audio IC: IRS2452AM

Solution example: 5 channel car audio amplifier
Solution specification
Number of audio channels: 5 half-bridge channels
Peak power output: 150 W at 4/2 Ω, 1% THD;
500 W at 4 Ω, 1% THD
Featured audio ICs: MA5332MS, MA5302MS,
IRS2092S, IRS20957S

MA5332MS / MA5302MS

15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Intelligent powerswitches and modules

Car and marine audio
Car and marine audio systems need to generate powerful and great sound while limiting the system size and heatgeneration to a minimum level. Infineon’s MERUS™ multi-chip module integrated class D amplifiers and class D
controller + MOSFETs combinations enable high-level power density and design flexibility to deliver the best music
listening experience regardless of where you are, whether it’s in your car, on your motorcycle, or on the water.

WBG semiconductors

DSP processor

Microcontrollers

70 V/100 V

USB-C controllers
and peripherals

Mixer

Solution specification
Number of audio channels: 2 half-bridge channels
Peak power output: >500 W at 4 Ω, 1% THD
Featured audio ICs: IRS2092S, IRS20957S,
IRS2461S, IRS2452AM

IRS2092S/
IRS20957S/
and MOSFET
in parallelPowermanagement ICs

Level
adjustment

Digital isolators

Solution example: active speakers

IGBT discretes andsilicon power diodes

Professional audio
Professional audio equipment is all about maximizing output power and power density. With the conception ofInfineon’s MERUS™ multilevel class D technology and GaN-based CoolGaN™ HEMTs, it is now possible to conceive both
amplifiers and power supply units with great audio performance and high efficiency in a very compact design. For
engineers developing amplifiers, Infineon offers varied chip-set solutions with versatile MOSFET combinations for thescaling of output power.

Applications

SolutionsClass D audio

Sensors

IRS2092S / IRS20957S
and MOSFET

Subwoofer

Click here to learn more:
Supportwww.infineon.com/merus
www.infineon.com/audio
34

Solutions

Motor control for
power tool and robotics

Applications

Motor control for power tool and robotics

15-300 V MOSFETs

Driving BLDC motors efficiently and precisely

Gate-driver ICs

500-950 V MOSFETs

When it comes to increased efficiency and durability, brushless DC (BLDC) motors offer the ideal solution for powerelectric motor applications. Compared to traditional brushed motors, brushless DC motors are quieter, lighter, andoffer an overall smaller design footprint while providing increased reliability. These improvements, however, comewith an increased need for monitoring and control, requiring significantly more complex electronics and supporting
algorithms. This move toward BLDC motors occurs in concert with a continuous push towards higher energy
efficiency, resulting in trade-offs between power delivery and battery lifetime. This, in turn, puts a significant burden
on semiconductor technologies to deliver high performance in motor control applications. In parallel, shortening life
cycles and increased product diversity put an additional burden on suppliers to provide that same high performance,
cost-efficient solutions across an increasing variety of use cases.

Digital isolators

With industry-leading technology and reliability, Infineon’s extensive portfolio of discrete and integrated circuits
offers the breadth and depth of solutions necessary to meet the demands across a wide spectrum of motor control needs.

Key features

Key benefits– A complete eco-system of simulations, documentation and demonstration boards– Comprehensive portfolio of products and solutions– Best in class MOTIX™ gate drivers for OptiMOS™ and StrongIRFET™ MOSFETs offering high efficiency and protection– World-class broad and deep portfolio of LV FETs with SMD packaging improves capability and reliability– Fast time-to-market– Broad portfolio allows for right product fit tomeet application needs– Extended battery life and product life span
– Reduction overall system size and costIntelligent powerswitches and modules

while reducing assembly cost

IGBT discretes andsilicon power diodes

Features and benefits– Components featuring small form factor and compact design offering highest power density and BOM
savings thanks to lowest RDS(on)Three-phase inverter

M
Microcontroller
Current sensor
Magnetic sensor

USB-C controllers
and peripherals

Gate driverPowermanagement ICs

Power management

Key enabling products‒ Power MOSFETs –OptiMOS™, StrongIRFET™
‒ MOTIX™ low-voltage motor
control solutions‒ XMC1000 microcontrollers‒ XMC4000 microcontrollers‒ PSoC™ 4100 microcontrollers‒ PSoC™ 62 microcontrollers‒ XENSIV™angle sensor‒ XENSIV™ magnetic sensor‒ XENSIV™ current sensor‒ XENSIV™ Hall switch

WBG semiconductors

Application diagram

Microcontrollers– High reliability of Infineon components results in prolonged product life spans

Sensors

Target end applications

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Supportwww.infineon.com/bldc
www.infineon.com/bdc
35

Applications

Solutions

Motor control for
power tool and robotics

Product portfolio

12-16

25-30

BSC005N03LS5, IQE006NE2LM5, IPT004N03L, IQE006NE2LM5CGSC,
ISZ019N03L5S, IQE008N03LM5,1840

IRL40DM247, BSC010N04LS, IST011N06NM5, IRF40SC240,
IPB011N04NF2S,IPB023N04NF2S, IPF013N04NF2S, ISC012N04NM6,
IST006N04NM6, ISC007N04NM6, IQD005N04NM6CG, IQE013N04LM6,
ISC017N04NM5

36-48

60

IST011N06NM5, BSC012N06NS, BSZ100N06NS, IPT007N06N,
IRFS7534, BSC014N06NS, IPTC007N06NM5, IPB013N06NF2S,
IPB015N06NF2S, IRF60DM206, IQE030N06NM5SC, ISC010N06NM5,
BSC028N06NS5

48-60

75-80

BSC021N08NS5, BSC030N08NS5, IPT010N08NM5, IPTG011N08NM5,
IPP040N08NF2S, IPB049N08N5, IPB016N08NF2S, IPB040N08NF2S,
IPB024N08NF2S, IPF017N08NF2S, IQE050N08NM5, BSC023N08NS5SC,
IST019N08NM5, BSC026N08NM5, IQE050N08NS5

60-72

100-120

BSC035N10NS5, ISZ080N10NM6, IPT015N10NF2S, IPTC015N10NM5,
IPP050N10NF2S, IPB018N10N5, ISC030N12NM6, IPP018N10N5,
IPT014N10N5, IPTC017N12NM6, IQD020N10NM5CG, IST026N10NM5,
ISC030N12NM6, ISC027N10NM6

72-96

150

BSC074N15NS5, BSC110N15NS5, BSC110N15NS5SC,
BSC093N15NS5SC, IPTG039N15NM5, IPTG044N15NM5,
IPTC054N15NM5, IPTC039N15NM5, ISQD063N15NMCG

96-144200

BSC220N20NSFD, IPTG111N20NM3FD, IPT111N20NFD, IRFP4127,
IRF200P222, IRF6785, IRFP4668, IRFH5020, BSC500N20NS3 G

Voltageclass [V]Gate drivers

25

Low-side

1ED44173

2.6 A/2.6 A

Integrated fast over-current protection, fault re- porting and enable
functionality, SOT-23 package

60

Three-phase

6EDL7141

1.5 A/1.5 A

Fully configurable gate driver for battery operated motor control applications, integrated power management and current sense amplifiers,
VQFN-48 package, >50 SPI programmable parameters. Highly integrated
with MOSFET slew rate control, 3 OpAmps, Buck+LDO, dual charge
pump

70

Three-phase

6EDL7151

1.5 A/1.5 A

High performance, highly integrated, programmable, PSU integrated,
space saving, slew rate control, MOSFET optimizations, >50 SPI programmable parameters, slew rate control, 3 OpAmps, Buck+LDO, dual
charge pump, and VDS sensing for hardware system protection

135

High-Side

1EDL8011

1 A sink

1EDL8011 high-side gate driver provides a simple and highly robust solution to drive a high side disconnect switch to protect battery operated
systems, OCP protection, adjustable current setting threshold, timedelay, safe start, UVLO.

160

Three-phase

6ED2742S01Q

1 A/2 A

160 V SOI process product for superior NPSOA with Bootstrap diodes.
Support multi protection features. Pre-regulated three phase SOI gate
driver with integrated charge pump, current sense amplifier, overcurrent
protection and fault out report in 5x5 VQFN-32 pacakge, 2K HBM ESD.

160

High- and low-side 2ED2732S01G

1 A/2 A

160 V SOI process product for superior NPSOA with Bootstrap diodes.
Separate VSS/COM, thermal pad, DFN10 package, high side/ low side’s
own dead-time, 2 kV HBM ESD, smaller footprint, cost effective, simple,
easy to use, 2ED2734 adds 7.5 V/ 6.8 V pos/neg UVLO

160

High- and low-side 2ED2734S01G NEW

2A/4A

160 V SOI process product for superior NPSOA with Bootstrap diodes.
Separate VSS/COM, thermal pad, DFN10 package, high side/ low side’s
own dead-time, 2 kV HBM ESD, smaller footprint, cost effective, simple,
easy to use

160

Half-bridge

2ED2742S01G

1 A/2 A

160 V SOI process product for superior NPSOA with Bootstrap diodes.
Separate VSS/COM, thermal pad, DFN10 package, integrated shootthrough protection logic, 2 kV HBM ESD, smaller footprint, cost effective, simple, easy to use, 2ED2742 adds 7.5 V/ 6.8 V pos/neg UVLO

160

Half-bridge

2ED2744S01G NEW

2A/4A

160 V SOI process product for superior NPSOA with Bootstrap diodes.
Separate VSS/COM, thermal pad, DFN10 package, integrated shootthrough protection logic, 2 kV HBM ESD, smaller footprint, cost effective, simple, easy to use

160

Half-bridge

2ED2748S01G NEW

4 A/8 A

160 V SOI process product for superior NPSOA with Bootstrap diodes.
High current drive for parallel MOSFET applications. Separate VSS/COM,
thermal pad, DFN10 package, integrated shoot-through protection logic,
2 kV HBM ESD, smaller footprint, cost effective, simple, easy to use

160

High- and low-side 2ED2738S01G NEW

4 A/8 A

160 V SOI process product for superior NPSOA with Bootstrap diodes.
High current drive for parallel MOSFET applications. Separate VSS/COM,
thermal pad, DFN10 package, high side/ low side’s own dead-time, 2 kV
HBM ESD, smaller footprint, cost effective, simple, easy to use

200

Three-phase0.165 A/0.375 A

SOI, integrated BSD, OCP, enable, fault reporting, TSSOP-28 package

200

High- and low-side IRS2005S

0.29 A/0.6 A

VCC and VBS UVLO, matched propagation delay, DSO-8 package

200

Half-bridge

IRS2007S

0.29 A/0.6 A

VCC and VBS UVLO, matched propagation delay, DSO-8 package

200

Low- or high-side

1EDN7550

4 A/8 A

Low propagation delay, differential input, high common-mode input,
UVLO, SOT23-6 and TSNP-6 package options

300

Three-phase

6EDL04N03PR

0.165A/0.375A

SOI, Strong -Vs immunity, Integrated BSD, OCP, enable, fault reporting,
TSSOP-25 package, >2 kV HBM ESD, P2P with 6EDL04N02

600

Half-bridge

IRS21867S

4 A/4 AHigh current level-shift gate driver with low VCC operation, DSO-8
package

600

Three-phase

6EDL04N06PT

0.165 A/0.375 A

SOI, integrated BSD, tolerant to –VS up to 100 V, OCP, enable, fault
reporting, DSO-28W package

650

Half-bridge

2ED2304S06F

0.36 A/0.7 A

SOI, integrated BSD, tolerant to –Vs up to 100 V, DSO-8 package

Click here to learn more:
www.infineon.com/bldc
www.infineon.com/bdc* Coming soon

500-950 V MOSFETs
Gate-driver ICs
WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Comment

Support

6EDL04N02

Current
source/sink

15-300 V MOSFETs

Product category

ConfigurationPart
numberRepresentative part numbers

Digital isolators

SuperSO8
SuperSO8 SC
PQFN 3x3
DirectFET™ S/M/L-Can
PQFN 5x6 Source Down
TOLL
TOLG
TOLT
TO-220TO-247DPAK
D²PAK
D²PAK 7-pin

Voltage
class[VDS max.]

IGBT discretes andsilicon power diodes

StrongIRFET™
OptiMOS™

Battery
voltage
support [V]Intelligent powerswitches and modules

Inverter/MOSFETs

Package options

Microcontrollers

Product family

Sensors

Product category

36

Arm® Cortex® -M4F core, up to 144 MHz, up to 512 kB flash/80 kB RAM, 4xCCU4/2xCCU8/2xPOSIF
timers, serial channels, up to 4x 12-bit ADC/2x DAC, 4xΔΣ demodulator, 64-100 pins

PSoC™ 4100

Arm® Cortex® -M0/M0+ CPU with DMA controller, up to 384 kB flash/32 kB SRAM, cryptographic
coprocessor, 12-bit ADC/13-bit DAC, configurable amplifiers, 16-bit PWM timers, configurable serial
communication blocks, up to 84 GPIO, 28-100 pin packages

PSoC™ 62

Dual-core 150 MHz Arm® Cortex® -M4 and 100 MHz M0/M0+, ultra-low power and low-power
operation modes, up to 2 MB flash, 1 MB SRAM with DMA, 24x16-bit and 8x32-bit timer blocks,
USB 2.0, up to 104 GPIOs

Hall switches

XENSIV™ TLI4963

3-5.5 V operation, active error compensation, high stability magnetic thresholds, low jitter

Angle sensor

XENSIV™ TLI5012

Integrated angle calculation, incremental interface, SPI with 8 Mbit/s, ≤ 1.9o angle error over-t
emperature/life, integrated giant magnetoresistance-based angle sensor, 15-bit representation ofangle value with 0.01o resolution, bi-directional SSC interface

3D magnetic sensor

XENSIV™ TLI493D± 50 to ±v 160 mT ranges, up to 30.8 LSB12/MT sensitivity, low-power mode, low offset andmatch drift, wake-up function

Magnetic corelesscurrent sensor

XENSIV™ TLI4971

25 to 120 A measurement range, 240 kHz bandwidth, low sensitivity error over temperature,galvanic functional isolation up to 1150 V, differential sensing, two independent overcurrent
detection outputs

Applications

XMC4400

15-300 V MOSFETs

Arm® Cortex® -M0 core. 32/48 MHz core, math coprocessor, peripherals up to 96 MHz peripherals,
CCU4/CCU8 PWM timers, 2x serial channels, hall and encoder interface, analog comparators,
12-bit ADC, up to 200 kB flash/16 kB RAM 16-64 pins

500-950 V MOSFETs

XMC1300
XMC1400

Gate-driver ICs

Fully programmable motor controller integrating XMC1404 microcontroller with MOTIX™ 6EDL7141
3-phase gate driver IC in one package. Include hardware MATH Co-Processor (96 MHz) for FOC
algorithms, includes PWM timers, position interface (POSIF) or serial communication modules
including CAN

Digital isolators

IMD701A

IGBT discretes andsilicon power diodes

3-Phase BLDC motor gate driver IC, voltage to 110 V, 24 V/48 V systems, gate driving capability:~230 nC/MOSFET up to 20 kHz, gate-shaping, diagnostics and protections, developed acc. toISO26262 achieving ASIL-B

Evaluation platforms
Application

Product name

Description

DEMO-PTOOL-300W-M

This design kit for cordless power tools uses the DirectFET™ ME/MF and firmware developed using the XMC1300 family

KIT_MOTOR_DC_250W_24V

3-phase DC motor control power card (VDC 24 V,
250 W motor drive power card for XMC1000 and XMC4000)

Intelligent powerswitches and modules

Category

Stepper motor control shield The stepper motor control shield based on Infineon's H-bridge IFX9201 and XMC1300 microcontroller can drive the two
with IFX9201 and XMC1300 coils in a stepper motor featuring a dual-H-bridge configuration. This current stepper motor control board is compatible
with Arduino microcontroller boards and Infineon's XMC™ microcontroller kits using the Arduino form factor
KIT_XMC1X_AK_MOTOR_001 XMC1000 motor control application kit
CY8CKIT-037

The CY8CKIT-037 is used for PSoC™ 4 solution evaluation for motor control application. The kit supports BLDC
motors, PMSM (permanent magnetic synchronous motors), and stepper motors. We provide example projects including single-shunt and sensorless FOC (field-oriented control), sensored BLDC control, sensorless BLDC control,and stepper motor control example projects

EVAL_6EDL7141_TRAP_1SH

The EVAL_6EDL7141_TRAP_1SH features fully configurable operating parameters with an on-board debugger readyfor direct USB connection to PC. The BLDC motor drive board uses trapezoidal commutation based on the MOTIX™
6EDL7141 smart three-phase driver and XMC1400 series micro-controller

EVAL_6EDL7141_FOC_3SH

The EVAL_6EDL7141_FOC_3SH features fully configurable operating parameters with an on-board debugger readyfor direct USB connection to PC. The BLDC motor drive board uses sensor-less FOC based on the MOTIX™ 6EDL7141
smart three-phase driver and XMC1400 series micro-controller

EVAL_IMD700A_FOC_3SH

The EVAL_IMD700A_FOC_3SH features fully configurable operating parameters with an on-board debugger
ready for direct USB connection to PC. The BLDC motor drive board uses sensor-less FOC based on the MOTIX™
IMD700/1A integrated XMC1400 series microcontroller with 6EDL7141 smart three-phase driver in a single package

EVAL_TOLT_DC48V_3KW

The evaluation board features a motor drive inverter power stage using high efficiency, OptiMOS™ 5 100 V power
MOSFETs in top-side cooling TOLT package. The top-side cooled MOSFET solution for 3-phase BLDC motor drive
leads to increase power handling capability. The power board operates with Infineon’s XMC1300 Drive Card (KIT_XMC1300_DC_V1). Firmware is provided with trapezoidal control for 48 V BLDC motor with hall sensors

S2GO_CUR-SENSE_TLI4971

For evaluation purposes of the latest XENSIV™ current sensor TLI4971, we rely on our proven evaluation concept of
Shield2Go and 2GO Kits – therefore the TLI4971 evaluation environment is also offered in those two configurations:– TLI4971 MS2GO: 2GO Kit version– TLI4971 S2GO: Shield2Go version

EVAL_TOLL_72VDC_2KW

The EVAL_TOLL_72VDC_2kW evaluation power board uses new OptiMOS™ 6 120 V power MOSFET technology devices for battery-powered 60 V - 84 V BLDC motor drives application suitable for high-power power tools. This evaluation board is designed to be driven by the Infineon XMC1300 drive card KIT_XMC1300_DC_V1 (or higher) loadedwith the correct firmware. Both, power board and drive card, are needed for this application. A 32-pin male–female
connector (MAB32B2-FAB32Q2) is needed to connect the power board and drive card.

EVAL_TOLT_DC36V_2KW

The evaluation board features a motor drive inverter power stage using high efficiency, OptiMOS™ 5 power MOSFETs 60 V
in top-side cooling TOLT package. The top-side cooled MOSFET solution for 3-phase BLDC motor drive leads to increase
power handling capability. The power board operates with Infineon’s XMC1300 Drive Card (KIT_XMC1300_DC_V1).
Firmware is provided with trapezoidal control for 36 V BLDC motor with hall sensors. Additionally, the evaluation board
includes three current shunts to allow compatibility with FOC commutation with XMC4400 drive card.

Click here to learn more:
www.infineon.com/bldc
www.infineon.com/bdc

SupportProduct

Microcontrollers

Sensors

TLE9140EQW NEW

USB-C controllers
and peripherals

PSoC™

Integrated brushed DC motor driverPowermanagement ICs

XMC™

Description
IFX9201SGWBG semiconductors

Microcontrollers

Product name
MOTIX™

Sensors

Category
Integrated devices

Solutions

Motor control for
power tool and robotics

37

Solutions

Motor control for
LEV and e-forklift

Key benefits– MOSFETs with best FOMs for drives with low RDS(on); low Qrr; low ΔVGS(th)– Broad and deep microcontroller portfolio enabling varied design approaches (plug n-play,– Extended range/increase in battery life
– Precise motor control– Gate drivers with robust isolation, TDI, high/programmable output current, active miller clamp– Current sensors having high current range, coreless sensing, high resolution, noise immunity and– Enable compact motor drive design– Quick and easy system design enabling fast time-to-market– Hall switches, angle/position sensors and 3D angle sensors with high accuracy, low jitter and low– Rugged, reliable and safe motor drives

programmability

power consumption

Material handling

500-950 V MOSFETs
Power
management ICs

USB-C controllers
and peripherals

Personal e-mobility

Microcontrollers

Key features

Intelligent powerswitches and modules

Features and benefits

optimized custom design), S/W tool libraries, hall and encoder I/F MATH Co-processor, ΔΣ demodulator, functional safety

Gate-driver ICs
IGBT discretes andsilicon power diodes

High-power low-voltage motor drives power both personal light e-mobility vehicles such as e-bikes, e-scooters,
e-motorcycles, micro EVs, as well as material handlers such as e-forklifts, delivery vehicles (xDVs), autonomous mobile
robots (AMR), automated guided vehicles (AGV), and commercial, construction and agricultural vehicles (CAV). These
applications can be collectively referred to as light electric vehicles (LEVs). LEVs have an ever-growing need for highly
efficient, intelligent, and powerful motor-drive systems to address requirements such as high speed, high peak andcontinuous torque, safety, reliability, and most of all, long battery lifetime. Infineon offers a comprehensive, end-toend solution for every segment and variation of this diverse market with power levels ranging from 200 W to evengreater than 50 kW. The OptiMOS™ and StrongIRFET2™ MOSFET families form a powerful yet efficient muscle of thesystem, while the EiceDRIVER™ and MOTIX™ gate driver families offer a broad range of both isolated and non-isolated
gate drivers. An array of motor control MCUs such as XMC™, PSoC™, TRAVEO™ T2G and AURIX™ along with theirsoftware/tools ecosystem, enable quick, easy, and tailor-made implementations of advanced motor control algorithms
while meeting increasing safety requirements. The XENSIV™ current and angle/position sensors enable accurate
closed-loop control. Along with an extensive product portfolio, Infineon simplifies and accelerates the design process
by offering demonstration, evaluation, and reference boards, simulation models, application notes, comprehensive
technical support, and a vibrant developer community.

Digital isolators

Powering light e-mobility and material handling15-300 V MOSFETs

Applications

Motor control for LEV and e-forklift

Application diagram
DC power signal

Gate driver
3-phase inverter
MOSFETiMotion™
XMC™

EiceDRIVER™

PSoC™

MOTIX™

Angle/position sensor
OptiMOS™

TRAVEO-2™

STrongIRFET™ 2

AURIX™
MOTIX™ IMD701A

3-phase inverter (MOSFETs)

OptiMOS™, StrongIRFET™

Microcontroller

XMC™, PSoC™,TRAVEO™ T2G, AURIX™

Gate driver

EiceDRIVER™, MOTIX™

Position/speed sensor

XENSIV™ angle sensors and Hall switches

Current sensor

XENSIV™ current sensor

Software and Design Enablement

IPOSIM, ModusToolbox™,
AURIX™ Development Studio, DAVE™ DriveXENSIV™
PMSM/BLDC/
induction motor (ACIM)

Current sensor
XENSIV™

Click here to learn more:
www.infineon.com/high-power-drive-up-to-200v
www.infineon.com/pmsm-below-200v

www.infineon.com/lev
www.infineon.com/eforklift

SupportControl signal

Product family

Sensors

Product

DC/DC
Motor drive
Microcontroller

WBG semiconductors

Motor control and drive38Applications

Solutions

Motor control for
LEV and e-forklift

80

IPTG011N08NM5, IPTC012N08NM5,
IPT012N08NM5, IPT010N08NM5,
IPB015N08N5, IPB017N08N5,
BSC019N08NS5, IPP024N08NF2S,
IPB024N08NF2S, IPP016N08NF2S,
IPP040N08NF2S, BSC037N08NS5,
IPB049N08N5, IPTC011N08NM5,
IPTC014N08NM5, ISC025N08NM5LF,
IPT009N08NM6, IPF011N08NM6,
ISC015N08NM6, IQD016N08NM5CG,
IPF023N08NF2S, IPF039N08NF2S,
IPT012N08NF2S, IPF017N08NF2S,
IAUCN08S7N013, IAUC100N08S5N031,
IAUC100N08S5N034, IAUT300N08S5N011,
IAUT300N08S5N012, IAUS300N08S5N011,
IAUS300N08S5N014, IAUS300N08S5N011T,
IAUS300N08S5N014T,
IPF014N08NF2S, IPB055N08NF2S,
IPB040N08NF2S, IPB024N08NF2S,
IPB019N08NF2S, IPB016N08NF2S

Catering to diverse
application mission
profile requirements with
OptiMOS™ (industrial andautomotive (AEC-Q101)
grade) and StrongIRFET™
2 (standard grade andgrade with broad availability from distribution
partners)

Component

Voltage class(V)

Gate drivers

60

Three-phase

6EDL7141

1.5 A/1.5 A

70Three-phase

6EDL7151

1.5 A/1.5 A

90Three-phase

TLE9140EQW

0.48 A

DSO32

Active LS freewheeling during overvoltage, ASIL-B functional safety,
automotive grade 0 qualified

90

Three-phase

TLE9180D-32QK 2 A/2 A

LQFP643 x current sense amplifiers (CSA), ASIL-C Functional safety,
automotive grade 1 qualified

160

Three-phase

6ED2742S01Q

1 A/2 A

QFN32

SOI, integrated BSD, trickle charge pumps, power management andcurrent sense amplifiers, RFE

160

Half-bridge

2ED27421 A/2 ADFN10SOI, integrated BSD, integrated shoot-through protection logic,
2 kV HBM ESD

160

High- and low-side

2ED2732

1 A/2 ADFN10SOI, integrated BSD, integrated shoot-through protection logic,
2 kV HBM ESD

160

Half-Bridge

2ED2772S01G

1A/2A

DFN10

SOI, integrated BSD, integrated shoot-through protection logic, 2 kV
HBM ESD, 7.5 V / 6.8 V pos/neg UVLO

160

High- and low-side

2ED2734S01G*

2A/4A

DFN10

SOI, integrated BSD, integrated shoot-through protection logic,
2 kV HBM ESD

160

Half-Bridge

2ED2744S01G*

2A/4A

DFN10

SOI, integrated BSD, integrated shoot-through protection logic,
2 kV HBM ESD

200

Three-phase

6EDL04N02PR

0.165 A/0.375 A

TSSOP-28 SOI, integrated BSD, OCP, enable, fault reporting, UVLO enable200

High- and low-side

IRS2005S

0.29 A/0.6 A

DSO-8

VCC and VBS UVLO, matched propagation delay

200

High- and low-side

IRS2011S

1/1 A

DSO-8

UVLO, MTON/OFF, max =20 ns, 3.3 - 5 V input

300

Three-phase

6EDL04N03PR*

0.165A/0.375A

TSSOP-25 SOI, Strong -Vs immunity, Integrated BSD, OCP, enable, fault reporting, package, >2kV HBM ESD, P2P with 6EDL04N02 with improved
voltage, ESD

Configuration

Part number

Source/sink

Package
VQFN48500-950 V MOSFETs

Low RDS(on) and low
conduction losses, tight
VGS(th) spread for efficientparalleling, low Qrr, softbody diode, innovative
packages

Gate-driver ICs

36-48

IPTC007N06NM5*, IPTC012N06NM5*,
ISC015N06NM5LF, IPF010N06NF2S,
IPF012N06NF2S, IPF016N06NF2S,
IPB029N06NF2S, IPB018N06NF2S,
IPB015N06NF2S, IPB013N06NF2S,
IPP040N06NF2S, IPTG007N06NM5,
IPT008N06NM5LF, BSC014N06NSSC,
IPP030N06NF2S, IPP019N06NF2S,
IPP016N06NF2S, IPP014N06NF2S,
IQD009N06NM5CG, IQDH88N06LM5CG
IQFH68N06NM5*, IQFH68N06NM5*,
ISG0614N06NM5H*
IAUC120N06S5N011*, IAUC120N06S5N017*,
IAUC120N06S5N022*, IAUTN06S5N008,
IAUTN06S5N008G

Digital isolators

60

Features

IGBT discretes andsilicon power diodes

80

24-36

Representative part numbersIntelligent powerswitches and modules

TOLL
TOLG
TOLT
D²PAK 7-pin
D²PAK
TO-220TO-247
SuperSO8

Voltage
class(VDS max)

Features
Configurable smart gate driver, integrated power management,
3 x current sense amplifiers (CSA)
Configurable smart gate driver, integrated power management, 3 x current
sense amplifiers (CSA) and VDS sensing for hardware system protection

600

High- and low-side

2EDL05N06PF

0.36/0.7 A

DSO-8

SOI, UVLO, MTON/OFF, max=60 ns, 3.3 - 15 V input, BSD

600

Single high-side

IRS21271S

0.2/0.42 A

DSO-8

UVLO, OCP, 3 - 15 V input, fault reporting

600

Three-phase

6EDL04N06PT

0.165 A/0.375 A

DSO-28

SOI, integrated BSD, OCP, enable, fault reporting, UVLO enable

Microcontrollers

36-48

60

Battery
voltage
support(V)

USB-C controllers
and peripherals

StrongIRFET™ 2 24-36
OptiMOS™

Package
optionsPowermanagement ICs

MOSFETs

Voltage
class(VDS max)

WBG semiconductors

Product family

Sensors

Battery
voltage(V)

Component

15-300 V MOSFETs

Typical power level of the inverter system: 200 W-4 kW

Click here to learn more:* Coming soon

www.infineon.com/lev
www.infineon.com/eforklift

Supportwww.infineon.com/high-power-drive-up-to-200v
www.infineon.com/pmsm-below-200v

39

Typical power level of the inverter system: 4 kW-11 kW

Component
Gate drivers

Voltageclass (V)IRF150P220, IPT039N15N5, IPTG039N15NM5,
IPTC039N15NM5, IPB044N15N5, IPT044N15N5,
IPB048N15N5, IPT054N15N5, IQD063N15NM5CG,
IPTC020N13NM6*, IPT020N13NM6*
IPF021N13NM6*, IPF031N13NM6*, IPP073N13NM6*,
IPTG020N13NM6*, IPTG029N13NM6*,
ISC037N13NM6*,ISC046N13NM6*,
IPTC025N15NM6*, IPTG025N15NM6*,
IPT025N15NM6*, IPF026N15NM6*, IPB029N15NM6*,
IPP029N15NM6*, IPP089N15NM6*, ISC044N15NM6*,
ISC055N15NM6*, ISC079N15NM6*, BSC093N15NS5,
IRFP4568, IPT063N15N5, IPB073N15N5, IRF7779L2,
IPP076N15N5, IRFS4115

Source/sink

Package

Configuration

Part number

160

High- and low-side

2ED2738S01G

4/8 A

DFN10

SOI, integrated BSD, integrated dead time, integrated shootthrough protection logic, 2 kV HBM ESD

160

Half-bridge

2ED2748

4/8 A

DFN10

Truly differential input, high-side and low-side driver, high common mode rejection capability (TDI), 8 V UVLO

160V

Half-Bridge

2ED2778S01G*

4A/8A

DFN10

Truly differential input, high-side and low-side driver, high common mode rejection capability (TDI), 7.5 V / 6.8 V pos/neg UVLO

200

1-ch non-isolated

1EDN8550B

4/8 A

SOT23-6

Truly differential input, high-side and low-side driver, high common mode rejection capability (TDI), 8 V UVLO

200

1-ch non-isolated

1EDN7550U

4/8 A

TSNP

Compact package, truly differential input, high-side and low-side
driver, high common mode rejection capability (TDI), 4 V UVLO

250

Half-bridge

2EDF5215F

5/9 A

DSO-8

Dual channel, 7 V UVLO, functional isolation gate driver, in compact package

500

High- and low-side

IRS2110S

2/2 A

DSO-16W

MTON/OFF, max=10 ns, separate power and logic ground, SD pin,3 - 20 V input

600

High- and low-side

2EDL23N06PJ

2.3/2.8 A

DSO-14

3.3 - 15 V input, -100 V transient, PGND, SOI, integrated BSD, OCP,UVLO, enable, fault reporting

600

High- and low-side

IRS21867S

4/4 A

DSO-8

High current level shift gate driver with low VCC operation

600

1-ch isolated

IR21270.25/0.5 A

DIP8Over current protection and fault reporting

650

High- and low-side

2ED2181S06 F/J

2.5/2.5 A

DSO-8 (F)DSO-14 (J)SOI, integrated BSD, 3.3 - 15 V input, MTON/OFF, max=35 ns, -100
V transient, separate logic and power ground (only J version)

500-950 V MOSFETs

Catering to diverse application mission profile requirements with OptiMOS™
(industrial and automotive„AEC-Q101“ grade) andStrongIRFET™ 2 (standard
grade and with broad availability from distribution
partners)

Gate-driver ICs

135-150

Low RDS(on) and low conduction losses, tight VGS(th)spread for efficient paralleling, low Qrr, soft body diode,innovative packages

Digital isolators

72-96

IPTG014N10NM5, IPTC014N10NM5,
IPT015N10N5, IPT015N10NF2S*, IPB020N10N5,
ISC022N10NM6, IPB017N10N5, IPP039N10N5,
IPP050N10NF2S, IPT017N12NM6, IPTC017N12NM6,
IPF019N12NM6, IPB055N08NF2S, IPF016N10NF2S,
IPF050N10NF2S, IPF042N10NF2S, IPF024N10NF2S,
IPP082N10NF2S, IPP026N10NF2S, IPP050N10NF2S,
IPT022N10NF2S, IPT017N10NF2S, IPT015N10NF2S,
IQD020N10NM5CG,
IPF019N12NM6, IPB035N12NM6, IPTC026N12NM6,
IAUCN10S7N021*, IAUC100N10S5L040,
IAUT300N10S5N014, IAUS300N10S5N015T,
IAUTN12S5N017, IAUTN12S5N018T

IGBT discretes andsilicon power diodes

100-120

FeaturesFeaturesIntelligent powerswitches and modules

48-72

Representative part numbers

Microcontrollers

StrongIRFET™ 2 TOLL, TOLG
OptiMOS™
TOLT D²PAK
7-pin D²PAK
TO-220 TO-247
SuperSO8
SuperSO8
SourceDown

Voltage class(VDS max)

USB-C controllers
and peripherals

Battery
voltage
support (V)Package
optionsPowermanagement ICs

MOSFETs

Product family

WBG semiconductors

Note: The MOSFET parts listed under various power-levels in the above tables is only for guidance purposes;
higher power levels can be achieved even with lower voltage class MOSFETs through paralleling.

Product
familyComponent
MOSFETs

Package
options

StrongIRFET™ 2 TOLL
OptiMOS™
TOLG
TOLT
D²PAK
7-pin
D²PAK
SuperSO8
TO-220TO-247

Component
Gate drivers

Voltageclass (V)650

1-ch isolated

Representative part numbers

Features
Low RDS(on) and low conduction losses, tight
VGSth spread for efficient paralleling, low Qrr, softbody diode, innovative packages

96-144200

IRF200P222, IPTG111N20NM3FD,
IRFP4668, IRFS4127, IPT067N20NM6,
ISC130N20NM6*, IPT129N20NM6,
IPP339N20NM6*, IPP069N20NM6,
IPF067N20NM6, IPB068N20NM6

144-200

250-300

IRF250P224, IRF300P226,
IPT210N25NFD, IPTG210N25NM3FD,
IPB407N30N, IPB600N25N3 G,
IRFP4868, IRFB4229, IRFS4229

Configuration

1200
1200

Battery
Voltage classvoltage[VDS max]
support (V)Part number

Source/sink

Package

1EDB8275F

5/9 A

DSO-8

1EDI60N12AF 10/9 A
2-ch isolated

2EDB8259F/
2EDB8259Y

5/9 A

Sensors

Typical power level of the inverter system: >11 kW

Catering to diverse application mission profile
requirements with OptiMOS™ (industrial andautomotive “AEC-Q101” grade) and StrongIRFET™
2 (standard grade and with broad availability from
distribution partners)

Features
3 kV basic isolation with CT technology, (UL1577), separate SRC/SNK
output, UVLO (4 types), CMTI > 300 V/ns
Short circuit clamping, active shut-down, UVLO, separate SRC/SNK
output, 3.3 - 15 V input

DSO16/DSO14

3 kV basic isolation w. CT technology, (UL1577), 8 V UVLO (4 types),
DIS, STP/DTC, CMTI > 300 V/ns

1200

2-ch with reinforced isolation 2EDR8259X

5/9 A

DSO-14Dual-channel, 8 V UVLO, gate driver with increased ch to ch creepage

1200

2-ch with reinforced isolation 2EDR7259X

5/9 A

DSO-14Dual-channel, 4 V UVLO, gate driver with increased ch to ch creepage

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15-300 V MOSFETs

Applications

Solutions

Motor control for
LEV and e-forklift

Microcontrollers and sensors for precision control and accurate sensing (power-level agnostic)
Product
familyRepresentativeparts

PackageFeatures

XMC13xxTSSOP-16/28/38,
VQFN-24/40,

UART, SPI, I²C, I²S, POSIF, MATH, 3x ACMP, CCU8

Arm® Cortex® M0, 48 MHz

XMC14xxTSSOP-38,
VQFN-0/48,
LQFP-64

UART, SPI, I²C, I²S, CAN, POSIF, MATH, 4x ACMP, 2x CCU8

Arm® Cortex® M4F,
up to 144 MHz

XMC4xxx

VQFN-48,
TQFP-64

UART, SPI, I²C, I²S, CAN, POSIF, HRPWM, CCU8, Ethernet, EtherCATSingle and dual core Arm®
XMC7100,
Cortex®-M7 and Cortex®-M0+ XMC7200

TQFP-100/176,
LFBGA-272

TCPWM timers of 102-ch 16-bit and 16-ch 32-bit, cryptography
engine support, CAN-FD

TRAVEO™ T2GSingle and Dual Arm® Cortex® TRAVEO™ T2G
M7 and M0+
Arm® Cortex® M4F and M0+

LQFP-64/100/176

ASIL-B functional safety, 16-bit dedicated motor TCPWM and32-bit TCPWM, clock extension peripheral, CAN-FD, cryptography
engine support, SOTA support

AURIX™

up to 6x TriCore™ at 300 MHz + AURIX™ TC3xx

LQFP-144/176,
LFBGA-292/516

ASIL-D functional safety with up to 4-lockstep cores, CAN-FD,
cryptography engine support, support high PWM (5 ns at 200 MHz),SOTA support

Arm® Cortex® M0, 48 MHz

VQFN-64

XMC1404 microcontroller integrated with 6EDL7141 3-ph smart
gate driver in a single package

Component

Product family

Representative parts

Features

Angle/position
sensors

XENSIV™ Hall switches(end of shaft/out of shaft)

XENSIV™ TLx4961/68

3 - 32 V operation, active error compensation, high stability magnetic thresholds, low jitter

XENSIV™ angle sensor(end of shaft)

XENSIV™ TLI5012

Integrated angle calculation, incremental interface, SPI with 8 Mbit/s, ≤ 1.9° angle error
over temperature/life, integrated giant magneto resistance-based angle sensor, 15-bit
representation of angle value with 0.01° resolution, bi-directional SSC interface

XENSIV™ TLE5501

Sin/cos output via analog interface, precise rotation sensing (typ. angle error of 1 deg),very-low current consumption (~2 mA), extended magnetic field range up to 100 mT,
ISO-26262 (functional safety) compliant option

XENSIV™ 3D magnetic sensor(end of shaft/out of shaft)

XENSIV™ TLI493D

Enables out-of-shaft angular sensing, ±50 mT to ±160 mT ranges, up to 30.8 LSB12/MT
sensitivity, low power mode, low offset and match drift, wake up function; recommended
for motors with max-speed up to 3000 rpm

XENSIV™ magnetic corelesscurrent sensor

XENSIV™ TLI4971±25 A, ±50 A, ±75 A and ±120 A measurement range, 240 kHz bandwidth, low sensitivity
error over temperature, galvanic functional isolation up to 1150 V, differential sensing,two independent over current detection outputs, user programmable parametersXENSIV™ TLE4972

Analog output, up to ±2000 A measurement range, 210 kHz bandwidth, fast overcurrent
detection output with programmable threshold, differential sensing, galvanic isolation
between current rail and sensor, user programmable parametersXENSIV™ TLI4973

Available in both integrated-current-rail (up to +-132A measurement range) and externalcurrent-rail (up to +-2000 A measurement range) options, 210 kHZ bandwidth, 5 V supply
voltage; ease of use with In-circuit programming, single-wire UART interface; differential
sensing, galvanic isolation, fast overcurrent detection, user programmable parameters

Gate-driver ICs
Powermanagement ICs

USB-C controllers
and peripherals

Current sensor

Digital isolators

IMD701A

IGBT discretes andsilicon power diodes

Motor Control IC MOTIX™

500-950 V MOSFETs

Arm® Cortex® M0, 32 MHz

Intelligent powerswitches and modules

XMC™

Core/MaxClock speed

Microcontrollers

Component

15-300 V MOSFETs

Applications

Solutions

Motor control for
LEV and e-forklift

Design resources

Sensors

WBG semiconductors

Low-voltage drives scalable power demoboard platform
XMC™ demonstration and eval boards
ModusToolbox™
TRAVEO™ T2G Motor Control

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41Applications

Solutions

Motor control for
LEV and e-forklift

System specification example
Vbat = 36 V, 250 W (continuous power) PMSM motor with dual-core controller and smart gate driver

Description

BSC012N06NS

Small form-factor in a SuperSO8 package, low RDS(on), low Qrr, soft body diodeMicrocontroller

XMC7100-F100K1088AA

Single 250-MHz Arm® Cortex®-M7 and 100 MHz Cortex®-M0+; Timers up to 12-ch 16-bit motor control,
63-ch 16-bit timer/counter/pulse-width modulation (TCPWM) and 8-ch 32-bit TCPWM

Gate driver

6EDL71413-phase configurable gate driver with >50 configurable parameters (slew rate, output voltage etc.);
fully integrated programmable buck (7,9,10,15 V) + LDO (3.3,5 V) power supply;
Three integrated current sense amplifiers (CSA)

Position/speed sensor

TLI49611MXTMA1

Bipolar Hall latch with 3.0 to 32 V operating supply voltage, active error compensation, low jitter (typ. 0.35 μs),
high ESD performance

Current sensor

TLI4971-A120T5-U-E0001

120 A measurement range with integrated current rail, high bandwidth of 240 KHz, high robustness to voltage
slew rates up to 10 V/ns, two independent fast overcurrent detection (OCD) pins with configurable thresholds

500-950 V MOSFETs

Part numbers

MOSFETs

Gate-driver ICs

Component

15-300 V MOSFETs

BoM example

Digital isolators

System specification example
Vbat = 48 V, 250 W (continuous power) PMSM motor with dedicated motor control MCU
BoM example
MOSFETs

BSC019N08NS5

Small form-factor in a SuperSO8 package, low RDS(on), low Qrr, soft body diodeMicrocontroller

XMC1302-T038X-0032

Core: 32 MHz Arm® Cortex®-M0, peripherals clock: 64 MHz; communication: UART, SPI, I²C,
motor control peripherals: POSIF, MATH, 1x CCU8Gate driver

6ED2742S01Q

3-phase gate driver built on silicon on insulator (SOI) technology with integrated BSD, trickle charge pumps,
power management and current sense amplifiers

Position/speed sensor

TLI49611MXTMA1

Bipolar Hall latch with 3.0 to 32 V operating supply voltage, active error compensation,
low jitter (typ. 0.35 μs), high ESD performance

Current sensor

TLI4971-A120T5-U-E0001

120 A measurement range with integrated current rail, high bandwidth of 240 KHz, high robustness to voltage
slew rates up to 10 V/ns, two independent fast overcurrent detection (OCD) pins with configurable thresholds

IGBT discretes andsilicon power diodes

Description

Intelligent powerswitches and modules

Part numbers

Microcontrollers

Component

System specification example
Vbat = 36 V, 250 W (continuous power) PMSM motor with functional safety requirement

Description
Small form-factor in a SuperSO8 package, low RDS(on), Low Qrr, soft body diodeMicrocontroller

CYT4BB5CEBQ0AESGS

Core: One/two Arm® Cortex®-M7 at 250MHz + Arm® Cortex®-M0+ at 100 MHz, 4 MB flash,
Up to 12 16-bit counters for motor control, Up to 220 programmable I/Os

Gate driver

TLE9180D-32QK

3-phase gate driver with three current sense amplifiers (CSA), ASIL-C functional safety;
automotive grade 1 qualified

Position/speed sensor

TLI49611MXTMA1

Bipolar Hall latch with 3.0 to 32 V operating supply voltage, active error compensation,
low jitter (typ. 0.35 μs), high ESD performance

Current sensor

TLE4973-R120T5-U-S0010

132 A measurement range with integrated current rail, UL1577 certified, AEC-Q100,
ISO 26262-compliant, digital control interface

Sensors

BSC016N06NS

Power
management ICs

Part numbers

MOSFETsWBG semiconductors

Component

USB-C controllers
and peripherals

BoM example

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Solutions

Motor control for
LEV and e-forklift

System specification example
Vbat = 48 V, 3 kW PMSM motor inverter
Description

MOSFETs

IPTC012N08NM5

OptiMOS™ 5 80 V power MOSFET in TOLT package enabling top-side cooling, high current rating >300 A, low QG
of 175 nC

Microcontroller

XMC1403-Q048X0200 AA

Core: 48 MHz arm cortex M0, peripherals clock: 96 MHz; communication: UART, SPI, I²C, 2*MultiCAN; motor
control peripherals: POSIF, MATH, 4x ACMP, 2x CCU88

Gate driver

2ED2738S01G

2-channel (half-bridge) gate driver with SOI isolation, integrated BSD, UVLO, separate VSS/COM, thermal pad

Position/speed sensor

TLE5012B E1000

Gian magneto resistive (GMR) based analog sensor with a high magnetic field range of 20 - 100 mT; Max. 1.0°
angle error over lifetime, discrete bridge with differential sine and cosine output

Current sensor

TLI4971-A120T5-U-E0001

120 A measurement range with Integrated current rail, high bandwidth of 240 KHz, high robustness to voltage
slew rates up to 10 V/ns, two independent fast overcurrent detection (OCD) pins with configurable thresholds

15-300 V MOSFETs

Part numbers

500-950 V MOSFETs

Component

Description

IAUS300N10S5N015T

Automotive 100V MOSFET in TOLT package (top-side-cooled), high current rating of 300 A, low Qg of 166 nC

Microcontroller

SAK-TC377TX-96F300S AB

AURIX™ TC377TX 3 * Tricore at 300 MHz; functional safety ASIL - D;
HSM (hardware security module); communication: 12-ch CAN-FD, 128-ch DMA

Gate driver

2EDB8259F

Half-bridge gate driver with 3 kV basic isolation based on coreless transformer (CT) technology, (UL1577),
UVLO (4 types), DIS, STP/DTC, CMTI > 300 V/ns

Position/speed sensor

TLE5014(D)Giant magneto resistive (GMR) angle sensors with a wide range of selectable interfaces (SPC, SENT, PWM, SPI),
low error rate < 1.0°, easy-to-use pre-configured sensors with high flexibility

Current sensor

TLE4973-AE35S5-S0001

High-precision coreless current sensor with full-scale up to 34 mT for high current applications;
Diagnostics: overcurrent detection (OCD), overvoltage (OV), undervoltage (UV), diagnosis mode

Digital isolators

Part numbers

MOSFETsIGBT discretes andsilicon power diodes

Component

Gate-driver ICs

System specification example
Vbat = 48 V, 20 kW PMSM motor inverter with ASIL-D MCU and AEC-Q 101 MOSFETs

Description
OptiMOS™ 6 150 V power MOSFET in TOLL package, high current rating > 261A, low Qg of 104nC

Microcontroller

XMC4700-F100K1536 AA

Core: ARM® Cortex ®-M4 at 144 MHz
Communication: channel USIC (configurable to SPI, UART, IIC, IIS)
Motor Control Peripherals: 2 x POSIF, 4-channel ∆Σ Demodulator, 4 x 12-bit ADC, 18 input channels, 4 x parallel
sampling and conversion

Gate driver

2EDB8259F

Half-bridge gate driver with 3 kV basic isolation based on coreless transformer (CT) technology, (UL1577),
UVLO (4 types), DIS, STP/DTC, CMTI > 300 V/ns

Position/speed sensor

TLE5501

Tunnel magneto resistive (TMR) based pre-calibrated sensor with 360° angle measurement;
Max. 1.0° (1.9°) angle error over lifetime, 16-bit representation of sine/cosine values

Current sensor

TLE4973-AE35S5-S0001

High-precision coreless current sensor with full-scale up to 34 mT for high current applications;
Diagnostics: overcurrent detection (OCD), overvoltage (OV), undervoltage (UV), diagnosis mode

Sensors

WBG semiconductors

Powermanagement ICs

IPT025N15NM6*

Microcontrollers

Part numbers

MOSFETs

USB-C controllers
and peripherals

ComponentIntelligent powerswitches and modules

System specification example
Vbat = 96 V, 3 kW PMSM motor

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43Solutions

Smart devices with NFC interface

Near-field communication (NFC) is a mature technology for contactless exchange of data over short distances. Besides
the data exchange, NFC technology itself can also transfer power from the polling device to the receiver devices. Due tothe working principle of resonant coupling, power transmission via NFC is efficient and user-friendly because it is lesssensitive to antenna/coil alignment. The combination of data exchange and energy transfer in one interface and theavailability in billions of smartphones make NFC an exciting enabler for the following novel use cases:

PWM

Gate-driver ICs
Digital isolators

NLM0011/NLM0010

R1

LB

C1
GND
CVCC
LA

VCC

VCC

IGBT discretes andsilicon power diodes

GNDIntelligent powerswitches and modules

Example: NFC passive lock

I/O
LA

M_A

M_B

Microcontrollers

LB

NAC1080
VCC_CB

VCC_HB

GND

VCC
GPIO1

USB-C controllers
and peripherals

GPIO2

I/O

Power
management ICs

Example: Smart radiator thermostat

SPI/I2C

LA

M_A

LB

M_B

M

The NGC1081 is a low-power controller with ADC/DAC unit,
integrated temperature sensor, and sophisticated analog anddigital I/Os. It is the ideal solution for contactless sensing
applications like temperature logger, gas detector, sensor
inlay, medical patch, etc. Furthermore, both sensing andactuation control capability make the NGC1081 a uniqueproduct in the market, ideally suited for applications that
require these functions – for example, radiator thermostats.

IADJ
ISET
ADIMM

Position
sensorWBG semiconductors

With Infineon’s new NFC tag-side controller family asingle-chip solution is available to develop cost-effective,
miniaturized, actuation or sensing applications operating ineither passive or active mode. The NAC1080, with integrated
H-bridge and energy harvesting modules, enables costeffective development of passive smart actuators like passive
locks. AC1081 is a package variant in VQFN32 package.

Current adjustable
LED driver IC

M

Smart actuator and sensing devices: In the IoT age,smart devices help people make their life easier and moresustainable. NFC technology provides an option to develop
battery-less smart devices that operate when the NFC reader
device, like a mobile phone, is present. As a complement tomainstream active IoT technology, passive NFC technology
is suitable for use cases like a passive smart lock, passive
sensor inlay, medical care patch, etc.

Example: NFC LED power supply

NGC1081
AN_OUT

VCC

GND
GPIO1

AN_IN
GPIO2

NTC

Sensors

Passive device parameter configuration: Programmingor configuring product operation parameters is sometimes
complicated because of access problems or equipment
requirements. Using an NFC interface, contactless or evenpassive operation can be performed anywhere. Modern LED
power supplies are already equipped with the NFC interface
to enable output current configuration in production, sales
channel, and the field. Infineon’s NLM product series supports
customers to enable NFC configuration functions effectively.

500-950 V MOSFETs

NFC-based configuration, actuation and sensing applications

15-300 V MOSFETs

Applications

Smart devices with NFC interface

NTC

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Gate-driver ICs

500-950 V MOSFETs

15-300 V MOSFETs

Applications

SolutionsContactless power and sensing

Description

Package

Ordering code

NLM0011Dual-mode NFC configuration IC with PWM output and CLO function

SOT23-5

NLM0011XTSA1

NLM0010Dual-mode NFC configuration IC with PWM output, without CLO function

SOT23-5

NLM0010XTSA1

IGBT discretes andsilicon power diodes

Type

Digital isolators

NFC configuration – NLM seriesIntelligent powerswitches and modules

See LED lighting chapter for more information.

NFC actuation and sensing – NAC1080 and NGC1081

USB-C controllers
and peripherals

Microcontrollers

Highly integrated single-chip solution
The low-power Arm® Cortex®-M0 based microcontroller with integrated NFC frontend, sensing unit, motor driver, andenergy harvesting function enables customers to develop smart actuation and sensing devices with minimum system
BOM requirement.

Powermanagement ICs

Full flexible software-defined functions
The flexible IC architecture and the smart partitioning between hardware and software enable customers to maximize
the utilization of software-defined functions.

NFC

Processor

RAM

NVM

ADC

DAC

I2V

H-Bridge

I²C

SPI

UART

GPIO

Analog-in

Package

ISO14443A

32-bit Arm®
Cortex®-M0

16 kB

60 kB

no

no

no

yes

no

yes

yes

7x

no

PG-DSO-16

NAC1081

ISO14443A

32-bit Arm®
Cortex®-M0

16 kB

60 kB

no

no

no

yes

no

yes

yes

7x

no

PG-VQFN-32

NGC1081

ISO14443A

32-bit Arm®
Cortex®-M0

16 kB

60 kB

12 bit10 bit

yes

yes

yes

yes

yes

16x

X4

PG-VQFN-32
Sensors

Type
NAC1080

WBG semiconductors

Build-in security functions to meet the application requirements
These ICs include hardware security functions such as secure area in flash, 128 bit AES accelerator and true random
generator. A separate secure element can be connected via the digital interface on demand.

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Solutions

Solutions for solid-state relays

Applications

Solutions for solid-state relays

15-300 V MOSFETs

Best-in-class RDS(on) x A enables unprecedented low losses incombination with advanced control and diagnostics features

Gate-driver ICs

500-950 V MOSFETs

Electromechanical relays are a mature and well-established technology. However, they suffer from some inherent
weaknesses. The mechanical movement of metal contacts causes noise. The high voltages can arc before the contacts
are completely opened or closed, which leads to contact degradation. An increase in contact resistance overthe lifetime causes the behavior to become less predictable. Triacs (or silicon-controlled rectifiers, SCRs) are widelyused as solid-state relays in AC applications. However, their controllability is limited and they suffer from high power
dissipation in the range of 1 W/A.

Key benefits– Operational lifetime: tens of millions of operations– No mechanical parts– Significantly faster switching– No increasing resistance vs. lifetime– Lowest RDS(on) x A in class– Temperature and current sensing– Minimum activation power– Maintenance-free (no degradation of contacts), MRO cost savings– Arcing-free operation, no contact bounce, clicking noise is eliminated– Advanced control superior to EMR– Stable performance, predictable behavior– Highest power density, minimized cooling effort, parallelization and scalability– Protecting FETs
– Less energy consumption, minimized cooling effort

Application diagram

AC or DC

USB-C controllers
and peripherals

Key features

Voltage Sense FB

Powermanagement ICs

Solid-state relay

Buffer Cap
CoolMOS™ S7T

Isolated gate driverT
Rs

CoolMOS™ S7T

Sensors

Isolation

WBG semiconductors

CS
TS
OUT

IN

Microcontrollers

Features and benefitsIntelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

FET-based solid-state solutions offer many benefits in relay applications. This includes significantly faster switching
while eliminating arcing and the noise associated with electromechanical devices. Inherently, this results in higher
reliability and more stable performance. When considering the maintenance, repair and operations (MRO) cost, astrong argument can be made for using solid-state relays. Compared to triacs, a FET-based solution offers advanced
control and protection methods. Built in temperatur and current sensing along galvanic isolation and secondary side
internal DC power supply allow power dissipation optimized FETs to work in Safe Operation Area and minmimize
cooling efforts. The latest CoolMOS™ S7T technology along the new isolated EiceDRIVER™ iSSI gate driver family are
perfect match for solid-state relay applications. They offer offer sophisticated diagnostics, protection and control
capabilities along unprecedentedly low RDS(on) x A figure of merit addressing contactors, actuator and print relay
applications in industries, which so far have been based on electromechanic relays.

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Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators

Product portfolio

MOSFETs

Voltage class[VDS max]

Product family
CoolMOS™ S7T*

600 V

RDS(on)10-22 mΩPackage
Q-DPAK top-side cooled (TSC)

Part number
IGBT discretes andsilicon power diodes

Product

IPDQ60T022S7, IPDQ60T017S7 , IPDQ60T010S7

TOLL

IPT60T022S7, IPT60T040S7, IPT60T065S7

600 V

22 mΩ - 65 mΩ

TO-220

IPP60R022S7, IPP60R040S7, IPP60R065S7

600 V

10 mΩ to 65 mΩ

Q-DPAK top-side cooled

IPDQ60R010S7, IPDQ60R022S7, IPDQ60R040S7,

600 V

10 mΩ to 65 mΩ

Q-DPAK bottom-side cooled

IPQC60R010S7, IPQC60R040S7, IPDQ60R017S7

CoolMOS™ S7A Automotive

600 V

10 mΩ to 40 mΩ

Q-DPAK top-side cooled

IPDQ60R010S7A, IPDQ60R017S7A,
IPDQ60R022S7A IPDQ60R040S7A

IGBT TRENCHSTOP™ 5

650 V

50 A

TO-247-4

IKZ50N65EH5, IKZ75N65EH5

Output voltage

Output current[typ.]20 V

5 A/9 A

functional/basic isolation

1EDB6275F, 1EDB8275F, 1EDB9275F

5 A/9 A

non-isolated

1EDN6550B, 1EDN8550B, 1EDN9550B, 1EDN8511B±2 A to ±6 A

functional isolation

1EDI10I12MF, 1EDI20I12MF, 1EDI30I12MF

400 mA

reinforced isolation

iSSI20R0xH, iSSI20R11H, iSSI30R1xH

25 V±2.6 A <<non-isolated

1ED44173N01B

40 V±3 A to ±6 A

functional isolation

1ED3431MU12M, 1ED3461MU12M

reinforced isolation

1ED3431MC12M, 1ED3461MC12M

Gate drivers

Product family
EiceDRIVER™

Product

Product family

Integrated
solid-state
relaysPhotovoltaic isolators (PVI)-

Output/loadcurrent
8 µA

Part number

Isolation voltage
4 kVPart number
PVI5080N

4 kV

PVI1050NS

60 V

2A

4 kV

PVG612A

400 V

240 mA

4 kV

PVT412AS

Sensors

Photovoltaic relays (PVR)

Load voltage

Isolation type

USB-C controllers
and peripherals

ProductPowermanagement ICs

IGBTs

WBG semiconductors

CoolMOS™ S7 Industrial

Microcontrollers

22 mΩ - 65 mΩ

Intelligent powerswitches and modules

Q-DPAK bottom-side-cooled (BSC) IPQC60T022S7, IPQC60T017S7, IPQC60T010S7

Click here to learn more:*MOSFET with integrated temperature sensor

Supportwww.infineon.com/ssr
www.infineon.com/S7
47

Solutions

Solutions forsolid-state circuit breakers

Gate-driver ICs

The first electromechanical circuit breakers emerged a century ago. Fast-forward to today, the demand for a shift
towards smart and intelligent solid-state devices is undeniable. In contrast to their traditional counterparts, solid-statesolutions offer exceptional control and protection capabilities. In the past, the adoption of solid-state technology faced
obstacles such as limited availability and high costs, restricting its usage to niche applications. However, thanks to
Infineon’s groundbreaking power semiconductors, designers can now deploy cost-effective and advanced solid-statesolutions on a broader scale.
Infineon’s comprehensive solutions for solid-state circuit breakers are covering all system needs fromsense – compute – actuate to the next level of connectivity and security.

Key benefits– Combines protection, actuation, load control, diagnostic, metering and secure– Provides noise-less and wear-free load switching with real-time control capability– Enables remote load control and diagnostic in real time
– Optimized system performance thanks to highly accurate and user programm-– AC and DC agnostic– Offers secure web/IoT connectivity– Captures and logs data in real time
– Enables smart power balancing and control of peak loads– Detects and isolates faults in sub µs range

IGBT discretes andsilicon power diodes

Key features

Digital isolators

Features and benefits

communication

500-950 V MOSFETs

Smart solid-state circuit breakers integrate advanced functionality
into one single device

15-300 V MOSFETs

Applications

Solutions for solid-state circuit breakers

able tripping characteristics– Supports smart billing, even for sub-branches by accurately
monitoring energy usage

Intelligent powerswitches and modules– Provides state-of-health diagnostics of connected loads– Easy to install and replace, since it matches current MCB’s form factor– Supports OCP, AFDD/AFCI and RCD/GFCI, all-in-one, for enhanced safety andprotection for both AC and DC grids– Compliant with industrial certification standards and support ZVS and ZCS for
smart and soft switching– Smart power balancing and peak load control for optimal energy efficiency as
it can be applied for AC and DC grids

connected loads, makes solid-state circuit breakers a highly advanced andreliable solution for modern power systems

Smartness
Software and services=

Security

Security

Security (OPTIGA™)

Data Logging

Control
I / V / ϑ - Sensing(e.g. XENSIV™)

V

CAN
RS485

WiFi/BT

AC/DC and DC/DC(e.g. CoolSET™)

A

Display

Field bus

Supply

V

~

ϑ

Power
management ICs

Microcontroller
Connectivity
MemoryN
USB-C controllers
and peripherals

P

Power stageµC

Power switch(e.g. CoolMOS™, CoolSiC™)

WBG semiconductors

Application diagram

Microcontroller +Connectivity +Security + Memory(e.g. PSoC™, XMC™
ISOFACE™
EXCELON™ F-RAM)

Microcontrollers– Secure web and I-o-T connectivity, along with state-of-health diagnostics ofClamping and protection
solution with companion
devicesP‘

N‘Control
Sensors

Gate driver ICs(e.g. EiceDRIVER™)

Click here to learn more:
Supportwww.infineon.com/sscb
48

Applications

Solutions

Solutions forsolid-state circuit breakers

Product portfolio
RDS(on)Package

600 V

10-22 mΩ

Q-DPAK

IPDQ60R010S7; IPDQ60R017S7, IPDQ60R022S7

CoolSiC™

750 V

8- 16 mΩ

Q-DPAK

IMDQ75R008M1H, IMDQ75R016M1H

CoolSiC™

650 V

7-15 mΩD2PAK

IMBG65R007M2H IMBG65R015M2H

Product
Current sensors

Product

Product family
XENSIV™

Product family

Output voltage
20 V

Output current
4 A/8 A

Isolation typeNon-isolatedPart number
1EDN8550B, 1EDN9550B

40 V+/- 5 A

Reinforced isolation

1ED3121MC12H

35 V

6.5 A

Functional isolation

1ED3142MU12F

20 V

5 A/9 A

Current rail

2EDB8259Y

Accuracy

PackagePart number

internal

2%

PG-TISON 8

TLI4971-A120T5

external

1.5 %PG-TDSO-16

TLE4972-AE35D5

PG-VSON-6

TLE4972-AE35S5

PG-TDSO-16

TLE4973-AE35D5

PG-VSON-6

TLE4973-AE35S5Power stage

Pout max.

PackagePart number

CoolSETTM

Integrated

15 W

PG-DSO-12

ICEAR4770AG

Flyback ICs

Non-integrated>60 W

PG-DSO-8

ICE5GSAG, ICE5ASAG

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

AC-DC Power conversion

Product family
EiceDRIVER™

Gate-driver ICs

Product
Gate drivers

IPDQ60T010S7; IPDQ60T017S7, IPDQ60T022S7

500-950 V MOSFETs

CoolMOS™ S7T*
SiC MOSFETs

Part number
15-300 V MOSFETs

CoolMOS™ S7

Voltage class[VDS max]

Digital isolators

SJ MOSFETs

Product family

IGBT discretes andsilicon power diodes

Product

Click here to learn more:
Supportwww.infineon.com/sscb
49

Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules

Applications

Microcontrollers

Applications
Home appliances and consumer electronics,
ITC infrastructure, renewables, robotics, e-mobility

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals‒ Security camera and video doorbell‒ Smart conferencing systems‒ LED lighting‒ Plug & LEDs play solutions‒ Smart lighting solutions‒ Telecommunication infrastructure‒ Data center and computing‒ Solar PV‒ Energy storage systems‒ Robotics‒ Light electric vehicles and electric forklift‒ On-board charger for xEV applications

Sensors‒ Air conditioning systems‒ Ceiling fan‒ Refrigerators‒ Air purifier‒ Induction cooking‒ Laundry machine‒ Tumble dryer‒ Cordless vacuum cleaner‒ Cordless power tools and outdoor power equipment‒ Smart TV‒ Smart speaker‒ Smartwatches, feature watches, wristbands, and smart rings

Click here to learn more:
www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

Supportwww.infineon.com/smps
www.infineon.com/xxxxxxx

50

Designing air conditioning systems that boast such capabilities requires highly reliable power semiconductors. The
enabling semiconductor solutions must be energy-efficient and reflect new form factors. Infineon’s solutions offer
high integration, comprehensive features, and robust protection while reducing time-to-market. Infineon offers theentire portfolio to develop inverters and active PFC for compressors, fans, and pumps. Our extensive portfolio of motor
controllers, intelligent power modules, power integrated modules, discrete IGBTs, MOSFETs, and gate drivers provide
you with everything you need to innovate. Go for ultimate efficiency with Silicon Carbide (SiC), high-frequency PFC
topologies, and your own algorithms.

Intelligent powerswitches and modules

The block diagram of an air conditioning system is shown below and the product selection table on the next page,
provide an effective recommendation for engineers to select the right component for each power management stage.

Application diagram

Motor drive

Motor control

Compressor drive

PFC-IPM

User interface

Securecommunication /authentication

M

Motor drive

Connectivity
WiFi / BLE

Motor drive

User interface

Sensors

M

M
Indoor fan
Outdoor fan
DisplayPowermanagement ICs

Sensors

Condition Monitoring

Button matrix

USB-C controllers
and peripherals

System control

Motor control

PFC

Microcontrollers

Indoor unit

Outdoor unit

Display

500-950 V MOSFETs

Smart, smaller, more powerful, and energy-efficient: Today’s air conditioning systems must meet growing demands.
Since they are used in private households, quiet air conditioning systems are in high demand. Functions such assmooth starting, a wide range of operating speeds, and vibration suppression are necessary. In addition, it must be
possible to integrate them easily and securely into a smart home to support remote control and condition monitoring.
Moreover, innovative features like people tracking and CO2 sensing help them stand out. By integrating IoT capabilities,
our HVAC systems offer enhanced functionality and greater efficiency while enabling seamless integration with othersmart home devices.

Gate-driver ICs

Reliable semiconductors for smart and efficient HVAC systems

Digital isolators

Air conditioning systems

15-300 V MOSFETs

Applications

SolutionsAppliances and consumer electronics

IGBT discretes andsilicon power diodes

Air conditioning systems

Condition monitoring

Aux supply
Aux supply

WBG semiconductors

Button matrix

Sensors

Microcontroller

Click here to learn more:
www.infineon.com/c-hvac
www.infineon.com/cipos

www.infineon.com/powermodules
www.infineon.com/igbtdiscretes

Supportwww.infineon.com/aircon
www.infineon.com/heat-pump51

Gate-driver ICs

500-950 V MOSFETs

15-300 V MOSFETs

Applications

Solutions

Air conditioning systems

25 V

1ED44171N01B

Cost/performance

600 V

6EDL04I06PT

Infineon SOI with integrated bootstrap
diode

TRENCHSTOP™ 5 IGBT WR5/WR6

650 V

IKW30N65WR5, IKWH30N65WR6

Recommended

TRENCHSTOP™ 5 IGBT advanced
isolation

650 V

IKFW40N65DH5

Easy to use

TRENCHSTOP™ IGBT7650 V

IKW30N65ET7

Recommended

EC7

650 V

IDWD60E65E7

Recommended

CIPOS™ Mini

600 V

CIPOS™ Mini PFC interleaved IPM series IFCM20T60GD/
IFCM20U60GD/IFCM30T60GD/IFCM30U60GDCIPOS™ Mini PFC integrated IPM series IFCM10P60GD/
IFCM10S60GD/IFCM15P60GD/IFCM15S60GD IM564-X6D

Easy to use/system size saving

CoolMOS™ SJ MOSFETs

600 V

IPP60R120P7

Recommended

iMOTION™ controller-

IMC302T-F064

Motor/PFC controller incl. software

CIPOS™ IPM-

CIPOS™ Mini

Easy to use/system size saving

Level-shift EiceDRIVER™

600 V

6EDL04I06PT

Infineon SOI with integrated bootstrap
diodeRC-D2 IGBT

600 V

IKD15N60RC2

Recommended

Easy IGBT Power Modules

600 V
650 V
1200 V

EasyPIM™;

Recommended

Econo IGBT Power Modules

650 V
1200 V

EconoDUAL™, EconoPIM™

Recommended

IDU motor control

IDU motor drive

Security-

IMC101T-T038

Motor controller incl. software

600 V

CIPOS™ Micro IM241 series

Easy to use/system size saving

600V

6EDL04I06PT

Infineon SOI with integrated bootstrap
diodeRC-D2 IGBT

600 V

IKD06N60RC2

Recommended

CoolMOS™ SJ MOSFETs

600 V

IPD60R1K0PFD7S

Recommended

XENSIV™ Hall switches-

TLI4963-2M

Recommended

XENSIV™ pressure sensor-

DPS368

Recommended

XENSIV™ MEMS microphone-

IM69D130

Recommended

XENSIV™ Hall sensors-

TLE4961, TLE4964, TLE4913, TLI4966G

Recommended

XENSIV™ 3D magnetic sensor-

TLI493D-W2BW

Vibration and position monitoring

XMC4000 microcontroller-

XMC4700

Recommended

XMC™ microcontroller-

XMC1400, XMC4100

Recommended

iMOTION™ controller-

IMC302A-F064

Motor/PFC controller incl. software

PSoC™ 6-CY8C62x4/5

Recommended

XMC™ microcontroller-

XMC1300, XMC1400

Recommended

iMOTION™ controller-

IMC101T-T038

Motor controller incl. software

CIPOS™ IPM

600 V

CIPOS™ Nano

Easy to use/system size saving

iMOTION™ IPM-

IMI111T-026H, IMI111T-046H

Motor controller incl. software, driverand power stage

Level-shift EiceDRIVER™

-

6EDL04I06PT

Infineon SOI with integrated bootstrap
diodeRC-D2 IGBT

600 V

IKN03N60RC2, IKD04N60RC2

Recommended

CoolMOS™ SJ MOSFETs

600 V

IPN60R1K5PFD7S

Recommended

OPTIGA™ Trust family

Connectivity Wi-Fi/BLE AIROC™

-

OPTIGA TRUST M SLS32AIA

Recommended-

CYW43439

Recommended

User interface

PSoC™ 6-CY8C62x4/5

Recommended

Sensors

XENSIV™ radar-

BGT60LTR11AIP

Recommended

XENSIV™ PAS CO 2-

PASCO2V01

Recommended

XENSIV™ MEMS microphone-

IM69D130

Recommended

XENSIV™ Hall switches-

TLI4963-2M

Recommended

Auxiliary supply

CoolMOS™ SJ MOSFETs

800 V

IPN80R4K5P7

Recommended

CoolSET™

700 V

ICE5AR4770BZS

Flyback with error amplifier

UV-C LED for health

LED driver ICs

42 V

BCR43xRecommended

IGBT discretes andsilicon power diodes

Non-isolated EiceDRIVER™
Level-shift EiceDRIVER™

Intelligent powerswitches and modules

Motor/PFC controller incl. software
Integrated overcurrent protection

Microcontrollers

IMC302A-F064
1ED44175N01B

USB-C controllers
and peripherals

25 V

Power
management ICs

iMOTION™ controller

Level-shift EiceDRIVER™

Indoor unit (IDU)

Selection/benefit

Non-isolated EiceDRIVER™

ODU motor drive (out- iMOTION™ controller
door fan)
CIPOS™ IPM

Condition monitoringand predictive
maintenanceTechnology/product family

WBG semiconductors

ODU motor drive(compressor)

Voltageclass

Sensors

Outdoor unit (ODU)
PFC

Product family

SupportFunctional block

Digital isolators

Recommended products

Click here to learn more:
www.infineon.com/aircon
www.infineon.com/heat-pumpwww.infineon.com/c-hvac
www.infineon.com/cipos

www.infineon.com/powermodules
www.infineon.com/igbtdiscretes
52

Key benefits– Reference design for ready-to-copy PCB– Turnkey PFC and motor control with MCE– Integrated infrared remote control– Suitable for single-sided PCB assembly process– Compatible with low- and high-voltage motors– MCU design option for higher flexibility– IEC61000-4-5 4 kVs surge compliant and EN55032 class B EMI compliant– Compact and cost-effective system solution– Eliminate the need for motor control software development– Easy evaluation and system verification– Reduce design-in effort and speed up time to market– Achieve maximum system cost-performance– Higher system reliability– One-stop-shop for simplified development to ensure fast time to market

Intelligent powerswitches and modules

Key features

IGBT discretes andsilicon power diodes

Features and benefits

Microcontrollers

Application diagram
Mains
85...264 V~

Auxiliary power
supplyPFC

USB-C controllers
and peripherals

AC/DC

500-950 V MOSFETs

Ceiling fan manufacturers face more stringent regulations regarding the application’s form factor and are underconstant pressure to reduce cost. Infineon is here to help with a compact, energy-efficient, cost-effective motor drive
solution. We propose a competitive solution with an extensive portfolio, high integration for system size reduction, andlow cost. Therefore, Infineon is your ideal partner for all ceiling fan designs. In our portfolio, you will find a wide rangeof solutions for inverterized fan motor control – whether your priority is achieving the highest level of integration using
our IPMs or showcasing ultimate flexibility with the right price-performance ratio using our discrete IGBTs or MOSFETs.
No matter your target, our power semiconductors, drivers, IPMs, MCUs, sensors, connectivity combos, security
solutions, and iMOTION™ motor controllers are designed to work together seamlessly. This means you can effortlessly
realize a smoother-running, quieter, more connected system with low energy consumption and a small form factor, all
the while getting to market even faster.

Gate-driver ICs

Energy-efficient and cost-effective solutions withhigh integration for system size reduction

Digital isolators

Ceiling fan

15-300 V MOSFETs

Applications

SolutionsCeiling fan

Gate driver

Security
FAN

Power
management ICs

3-phaseinverter
HMI

Microcontroller

Connectivity

WBG semiconductors

Smart home sensing

Sensors

Current sensor

Click here to learn more:
Supportwww.infineon.com/ceiling-fan
53500-950 V MOSFETs

15-300 V MOSFETs

Applications

SolutionsCeiling fan

Integrated power
stage

Fixed frequency
CoolSET™

ICE5GR4780AG

CIPOS™ Nano IPMs

Discrete IGBT

600 V Reverse
Conducting Drive 2

industry’s benchmark for thermal performance with the latest innovationin quasi-resonant technology for unparalleled performance and efficiency.

– Innovative Power QFN package, which utilizes PCB copper traces todissipate heat from the module, CIPOS™ Nano family delivers a new
benchmark in device size, offering up to a 60 percent smaller footprint
than existing three-phase motor control power IPMs.

IKD04N60RC2,
IKD06N60RC2,
IKN03N60RC2,
IKA08N65H5,– Adequate performance at competitive price– Good enough di/dt controllability in order to reduce electromagnetic

IPA80R1K4P7– 0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature asIntelligent powerswitches and modules

Intelligent power
moduleprotection and error amplifier– Increase mid and light load efficiency with digital frequency reduction– High power delivery with slope compensation for CCM operation– The 5th generation quasi-resonant CoolSET™ controller combines the

PWM-PFC Controller Quasi Resonant
CoolSET™
Motor Control anddrive

Digital isolators

Aux power

Benefits– Low BOM for 2-stage topologies– Cost-effective with optimal efficiency– DCM for frequency foldback– QR operation for high efficiency– Reduce BOM count and cost with integrated line input over voltage

noise– Improved humidity robustness (HV-H3TRB test passed)– Wide portfolio with current classes range from 4 A to 15 A and 1 A to 6 A in
SOT-223MOSFET

CoolMOS™

compared to CoolMOS™ C3– Enabling higher power density designs, BOM savings and lower assembly

EiceDRIVER™ 500 - 700 6EDL04I06PT
V Level Shift Gate
Driver ICs
600 V half-bridge gate
driver IC

2EDL23I06PJ

650 V, 0.7 A high-side
and low-side gate
driver

2ED2106S06F

650 V, 2.5 A highcurrent half-bridge
gate driver IC

2ED2184S06F– Easy to drive and to design-in– Better production yield by reducing ESD related failures– Less production issues and reduced field returns– Easy to select right parts for fine tuning of designs– Standard pinout allows for drop in replacement– Industry standard qualification level– High performance in low frequency applications– Increased power density– Space saving package– Improved energy efficiency

USB-C controllers
and peripherals

Gate driver IC

IRLML0040

Microcontrollers

cost

StrongIRFET™

– Space saving package– Improved energy efficiency– Integrated bootstrap diode - Space saving, reduced BOM cost, smaller PCB
at lower cost with simpler design– 50% lower level-shift losses– Excellent ruggedness and noise immunity against negative transient
voltages on VS pin

WBG semiconductors– High current gate driver - suitable for high current power device, and highfrequency application– Integrated bootstrap diode (BSD) - Space saving, reduced BOM cost,smaller PCB at lower cost with simpler design– 50% lower level-shift losses– Excellent ruggedness and noise immunity against negative transient
voltages (-100 V) on VS pin

Microcontroller

XMC series

XMC1302T038X0032AB– Significant CPU performance, integrated peripheral functionality andiMotion™ series

IMC102T-F064,
IMD112T-6F040,
IMD111T-6F040– iMOTION™ ICs integrate all the control and analog interface functions

Sensor system

Current sensors

Security

Authentication/
security

OPTIGA™ Trust

HMIInfraRED interface

PSoC™ 4: 32-bit Arm®
Cortex®-M0 MCU

Connectivity

WiFi + Bluetooth®

AIROC™ Wi-Fi +Bluetooth® Combos

Smart Home Sensing

MEMS microphones XENSIV™ MEMS
microphones

rapid development environment enabling short time-to market, withoutcompromising cost efficiency.
required for sensor less field oriented control (FOC) of PM motors using DC
link or leg shunt current measurements. In addition they feature Infineon’s
patented and field proven motion control engine (MCE) that eliminatessoftware coding from the motor control algorithm development process.
Implementing a variable speed drive is reduced to configuring the MCE forthe respective motor. Assisted by the powerful tool iMOTION™ Solution
Designer (iSD), it is possible to have the motor up and running in less thanan hour.

– High-precision coreless open-loop current sensors are less bulky, and costless compared to core-based current sensors

OPTIGA TRUST M
SLS32AIA– Easiest way to add security– Works with any MCU/MPU– Robust, future-proof security– Easy integration– NDA-free product documentation– MIT-licensed public host software– The most flexible and scalable low-power mixed-signal architecture.
– A single-chip solution to enable small-form-factor IoT designs– Capturing audio signals with unprecedented precision and quality

Radar sensor

XENSIV™ Radar

BGT60LTR11AIP,BGT60UTR11AIP,BGT60TR13C– Energy, lifetime saving, and small formfactor

CO₂ sensor

XENSIV™ PAS CO2
sensor

PASCo2V01– Space savings and opening up consumer application market– High-quality data and compliance with most stringent regulations for

IGBT discretes andsilicon power diodes

Part number
ICL8810Power
management ICs

Product family
AC-DC LED Driverindoor air quality (e.g., title 24 in California)– Cost-effective high-volume assembly and easy system integration– Suitable for high volume standard high-speed pick & place for fast &automatic assembly - No need of post calibration– Customer flexibility thanks to variety of configuration options
Click here to learn more:
www.infineon.com/ceiling-fan
54

Sensors

Product category
PFC

SupportFunctional block
AC-DC power supply

Gate-driver ICs

Product portfolio

Solutions

Ceiling fan

Applications

REF-SHA35IMD111TSYS reference design

15-300 V MOSFETs

The REF-SHA35IMD111TSYS is a turnkey solution for low-voltage BLDC ceiling fans, focusing on high efficiency and aready-to-use solution for motor and PFC control. It uses the iMOTION™ IMD111T-6F040 driver with field-proven motion
control engine (MCE) which eliminates software coding from the motor control algorithm development process.

Intelligent powerswitches and modules
Microcontrollers
Sensors

WBG semiconductors

Powermanagement ICs‒ Wide AC input range of 90~300 Vrms
‒ High PF value > 0.95, THD < 10% at max load
‒ High efficiency of > 0.85 at maximum load
‒ Standby power < 1 W‒ 4 kV L-N surge meets IEC61000-4-5‒ iMOTION™ motion control engine (MCE)‒ Infrared remote control with last-speed-saving‒ Full protection: brown-in/out, overvoltage, overcurrent‒ Single-layer PCB for compact, low-cost design‒ RoHS compliance

Benefits‒ Cost-effective single-layer design with aready-to-copy PCB‒ No motor control algorithm development is required‒ Tested according to the regulations which
apply to the Indian Market

USB-C controllers
and peripherals

Summary of features

IGBT discretes andsilicon power diodes

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

Assisted by the powerful iMOTION™ Solution Designer (iSD), it is possible to have the motor up and running inless than an hour.

Click here to learn more:
Supportwww.infineon.com/ceiling-fan
55

Solutions

Ceiling fan

500-950 V MOSFETs

REF-SHA35WRC2SYS (high voltage) is a full-featured starter kit which consists of a main board plus a daughter cardwith IrDa sensor and a suitable remote-control box. The main board includes IMD112T iMOTION™ driver which provides
turnkey PFC and motor control with the field-proven motor control engine (MCE), that eliminates software coding
from the ceiling fan motor control algorithm development process. Moreover, a PFC stage with IKA08N65H5 as switch
plus 1ED44171N01B as suitable gate driver and IKN03N60RC2 for the inverter stage are also included.

15-300 V MOSFETs

Applications

REF-SHA35WRC2SYS reference design

Microcontrollers

Benefits‒ Cost-effective single-layer design with aready-to-copy PCB‒ Easy evaluation of the complete system, including
infrared control‒ Ready-to-use motor control algorithms (incl. PFC)
for high-efficiency permanent magnet synchronous
motors (PMSM)

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Summary of features‒ Input voltage range 120~300 Vrms
‒ Maximum input power 35 W
‒ PFC factor ≥ 0.9 and iTHD ≤ 10% at 230 Vrms
‒ PFC stage on-board (up to 60 kHz)‒ IEC61000-4-5 4 kV surge compliant‒ EN55032 Class B EMI compliant‒ Overcurrent protection and auxiliary supply on-board

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

Gate-driver ICs

The single layer PCB with 90 mm diameter provides a cost-effective and ready-to-copy reference for common ceilingfan designs.

Click here to learn more:
Supportwww.infineon.com/ceiling-fan
56

Higher efficiency at lower costGate-driver ICs

Today, consumers are not only looking at energy consumption and noise levels. Compact design coupled withmaximum storage space is also playing an increasingly important role. In addition, there is a desire for intelligent
appliances that can be easily integrated into the home network. From the manufacturer’s point of view, the challenge
is to meet the stricter regulations on energy efficiency while at the same time ensuring the form factor and a reduction
in costs. Our intelligent, compact, energy- and cost-efficient drive solutions for refrigerators and freezers meet the highcustomer requirements.
Refrigerators
Motor/system control

PFC

Gate drivers
ICs

Discretepower devices

Motor
control

IPMs/
Smart IPMs

User interface

Digital isolators

M
DisplayCompressor

Motor inverter stage

IGBT discretes andsilicon power diodes

Security
Sensors

Button matrix

500-950 V MOSFETs

Refrigerators

15-300 V MOSFETs

Applications

Solutions

Refrigerators

Connectivity
Wi-Fi/BLEIntelligent powerswitches and modules

Condition monitoring

Microcontrollers

Aux supply

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Infineon offers a comprehensive portfolio for refrigerator compressors. Whether you choose the highest level ofintegration with our intelligent power modules (IPM) or aim for the best price/performance ratio with discrete
components, our IGBTs, MOSFETs, gate drivers, and microcontrollers are designed to work together seamlessly.
CIPOS™ family of IPMs is the optimal solution for highly integrated compressor drives whilst discrete solutions likethe 600 V RC-D2 IGBT or the CoolMOS™ PFD7 SJ MOSFET along with EiceDRIVER™ 600 V level-shift gate driver are
the best choice whenever layout flexibility and thermal performance optimization are the key design targets. If fullload operation and EMI performance are key for the design, the 600 V RC-D2 IGBT is the best choice. The diode ismonolithically integrated and its current rating has been optimized for price and performance. Both RC-D2 IGBT and
CoolMOS™ PFD7 SJ MOSFET have introduced SOT-223 package to further improve the price with a smaller packagethat is pin-to-pin compatible and substitutable with the DPAK package. Beside inverter, motor control is also critical.
Both PSoC™ and XMC™ microcontroller families are recommended. For the auxiliary power supply, the CoolSET™
family rounds up our power portfolio by offering increased robustness and performance. Our PSoC™ microcontroller
family, AIROC™ Wi-Fi + Bluetooth® Combos connectivity products and XENSIV™ sensors complete the portfolio needed
for a truly smart refrigerator. The energy-efficient CIPOS™ modules integrate various power and control components
to increase reliability, optimize board size, and reduce system costs. This simplifies power supply design and shortens
time-to-market. Infineon offers the OPTIGA™ Trust hardware security solution and enables secure access to all major
cloud providers.

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Supportwww.infineon.com/homeappliancewww.infineon.com/refrigerator
57

Applications

Solutions

Refrigerators

15-300 V MOSFETs

CoolMOS™ PFD7 for next-level energy saving
Although both MOSFETs and IGBTs can be used in refrigerator compressor drives, as most of the time, the refrigerator
operates under light load, the MOSFET is highly recommended due to its lower conduction loss, thus reducing overall
power loss at this condition.

Nominal load

25% load

50% load
Motor current
IGBT

IGBT discretes andsilicon power diodes

Digital isolators

Light load

75% loadIntelligent powerswitches and modules

Conduction loss

Gate-driver ICs

500-950 V MOSFETs

The 600 V CoolMOS™ PFD7 high-voltage MOSFET series, shaped by Infineon’s experience of more than twenty years inpioneering in superjunction SJ technology innovation, sets a new benchmark in 600 V SJ technologies. This productfamily combines best-in-class performance with state-of-the-art ease of use, features an integrated fast body diodeensuring a robust device and allowing for reduced BOM for the customer.

MOSFET

Microcontrollers

Smart, connected and secured – system solutions for the new home appliance era
Modern refrigerators can sense their environment by being smart and connected. They provide data to their users aswell as to the manufacturer (who can remotely analyze the performance data and suggest preventive maintenance).
In this data exchange, secure communication systems play a crucial role.

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Components and system solutions from Infineon enable you to build smart home appliances while providing
secure data acquisition, control, and device connectivity. Furthermore, they enable the highest device efficiency,
smallest form factors, and improved carbon footprint with smart power supply designs. Benefit from one of the mostcomprehensive, out-of-the-box product and design portfolios on the market to best meet your unique applicationneeds.

Click here to learn more:
Supportwww.infineon.com/homeappliancewww.infineon.com/refrigerator
58

Applications

Solutions

Refrigerators

Recommended products

Non-isolated EiceDRIVER™

25 V

1ED44171N01B

Integrated overcurrent protection

25 V

1ED44175N01B

Cost/performance

CoolMOS™ SJ MOSFETs

600 V

IPP60R120P7

Active and preferred

CoolSiC™ Diodes

650 V

IDW30G65C5

Active and preferred

EiceDRIVER™ gate driver ICs

600 V
650 V

6EDL04N06PT
2ED2304S06F

Level-shift three-phase or half bridge gate
drivers with integrated bootstrap diode

XMC™ and PSoC™ microcontroller-

XMC1400; XMC1300: PSoC™ 4

Recommended

iMOTION™ controller-

IMC102T-F048

Motor/PFC controller incl. software

iMOTION™ driver-

IMD111T-6F040

Motor controller incl. software andintegrated driver

iMOTION™ IPM-

IMM101T-046M

Motor/PFC controller incl. software,
driver and power stage

CIPOS™ IPM-

CIPOS™ Micro IM241 series

Easy to use/system size saving
Improved performance with
RC-D2 technology

RC-D2 IGBT

600 V

IKN04N60RC2 IKD06N60RC2

Recommended

CoolMOS™ SJ MOSFETs

600 V

IPN60R600PFD7S, IPD60R600PFD7S

Both DPAK and SOT-223 packages recommended while SOT-223 package achieve
more cost-effective and improved form
factor inverter design.

PSoC™ 6 and PSoC™ 4-

CY8C62x4/5, CY8C40xx

Recommended

Connectivity Wi-Fi/BLE AIROC™

-

CYW43439

Recommended

Auxiliary supply

CoolMOS™ SJ MOSFETs

800 V

IPN80R4K5P7

Active and preferred

CoolSET™

700 V

ICE5AR4770BZS

Integrated package, BOM saving andsimple to design

Security

OPTIGA™ Trust family-

OPTIGA TRUST M SLS32AIA

Recommended

Sensing and condition
monitoring

XENSIV™ radar sensor-

BGT60LTR11AIP, BGT60UTR11, BGT60TR13C Recommended

XENSIV™ pressure sensor-

DPS368XENSIV™ MEMS microphones-

IM69D130

Recommended

XENSIV™ PAS CO2 sensor

12 V

PASCO2V01

Recommended

XENSIV™ PAS CO2

5V

PASCO2V15

Recommended

XENSIV™ magnetic position sensors-

TLV493D-A1B6

Recommended

15-300 V MOSFETs

Motor/PFC controller incl. software andintegrated driver

500-950 V MOSFETs

IMD112T-6F040

Gate-driver ICs-

Digital isolators

iMOTION™ driver

Recommended

Microcontrollers

HMI

Selection/benefit

IGBT discretes andsilicon power diodes

Compressor drive

Technology/product family

Intelligent powerswitches and modules

PFC

Voltage class

Product category

Product family

Benefits

XENSIV™ PAS CO2 sensor

Miniaturized, real CO2 sensor which fulfills WELL™ Building Standard; Ideal CO2 solution forcommercila, residential and IoT applicationsXENSIV™ MEMS microphones IM69D130

High-performance microphone with low self-noise (high SNR) and low distortions enablesnoise monitoring for advanced predictive maintenance analytics

XENSIV™ digital barometric pressure sensors DPSxxx Advanced predictive maintenance analytics are enabled based on highest precision and relative accuracy over a wide temperature range to detect anomalies in airflow
Accurate three-dimensional sensing with extremely low power consumption in a small 6-pin
package to enable vibration and position monitoring of the compressor

XENSIV™ TLI4970 current sensor

Fully digital solution featuring high precision and ease of use, significantly reduces overall
implementation efforts as well as PCB space to enable cost fan and compressor current
measurement

XENSIV™ 60 GHz radar sensor

Thanks to their small form factor and low power consumption, Infineon’s highly integrated
mmWave XENSIV™ 60GHz radar sensor solutions bring innovative and intuitive sensing capabilities to appliances like refrigereators. Radar has been demonstrated to be a powerful sensor
for short range localization expecially in smart home appliances

Sensors

XENSIV™ TLV493D-A1B6 3D magnetic sensor

Click here to learn more:
www.infineon.com/homeappliancewww.infineon.com/refrigerator

SupportSensors

USB-C controllers
and peripherals

XENSIV™ sensor solutions for smart refrigerators

Powermanagement ICs

Product family

WBG semiconductors

Functional block59

Solutions

Air purifier

It takes time to filter all the air in a room, meaning these units usually operate continuously, making low energy
consumption essential. Also since they operate in living spaces, low noise and vibration are also significant factors toconsider. Sensors measure air quality, detect presence, and recognize gestures. Connectivity to integrate the air purifier
into a smart home remote control can be achieved through Wi-Fi. At the same time, the user can interact with thedevice through a modern Human-Machine Interface (HMI) or voice control.

IGBT discretes andsilicon power diodes

Digital isolators

Highly integrated Infineon components for air purifiers provide high efficiency, low noise, and low energy
consumption in motor drivers. A reliable wireless connectivity solution combined with high-accuracy sensing provides
environmental intelligence and seamless connection with smart homes.

– Wide portfolio of highly integrated solutions– Robust IPM motor control solutions– Broad portfolio of innovative sensor solutions– Reliable connectivity with Wi-Fi / BLE– High reliable and market-proven Infineon products– Reduced BOM cost and development effort, increased space saving– Optimized system performance and reliability compared to discrete– Measure air quality, turn off when not needed, save energy– Smart home appliance– Extend system lifetime

Microcontrollers

Key benefitsIntelligent powerswitches and modules

Features and benefits
Key features

AC-DC power supply

Wireless connectivity

Voice control

AC-DC integrated
power stage

Wi-Fi/Bluetooth® LE

MEMS microphones

Sensors

System control

Fan motor drive

Microcontroller

Intelligent power
modules

USB-C controllers
and peripherals

Application diagram

VOC sensors

Discrete IGBTs and
MOSFETsfor motor drive

Humidity sensors

CO2 sensors
Motion sensors

HMI

Gate driver ICs

Touch sensors

MCUs for motor control

M

WBG semiconductors

Temperature sensors

Powermanagement ICs

AC mainpower input

PM5 sensors

500-950 V MOSFETs

Breathing in fresh, clean air has never been more vital for our health — and the next generation of air purifiers lets you
take air quality to a whole new level. Today, the best smart air purifiers boast intelligent features like voice control appsthat allow you to monitor particle levels, and schedule cleanings days in advance.

Gate-driver ICs

Smart and efficient air quality improvement

15-300 V MOSFETs

Applications

Air purifier

LCD

Sensors

Pressure sensors

Click here to learn more:
Supportwww.infineon.com/air-purifier
60

Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs

Product portfolio
Product familySpecification

Benefits

AC-DC
integrated
power stage

CoolSET™ AC-DC
integrated power stages

ICE5AR4770BZS

Sensing

CO2 sensor

XENSIV™ PAS CO2
sensors

PASCO2V01BUMA1– Reduce BOM count and cost with integrated error amplifier– Increase mid and light load efficiency with digital frequency reduction– High power delivery with slope compensation for CCM operation– Superior accuracy, providing a direct readout of the real CO₂ level, not simply a

XENSIV™ Radar

BGT60TR13C– Size and cost advantages– Accurate presence detection and vibration detection based on ability to track

Motion sensing

Digital isolators

Product

AC-DC
power supply

correlation

IGBT discretes andsilicon power diodes

Functional block

sub-millimeter motion at high speed and accuracy,– Both stand-alone chip as well as system solution available
DPS368– Fast, ultra-low noise read-out allows for precise measurement of air flow, and

Wi-Fi +
Bluetooth®
CombosCYW43439– Best-in-class interoperability to the widest deployed wireless IP– Whole Home Range with high throughput for multi-channel audio and RSDB

can be used in harsh environments with water, dust, or humidity

Intelligent powerswitches and modules

AIROC™ Wi-Fi +Bluetooth® Combos(Real Simultaneous Dual Band) for speaker sub-networks– Ultralow-power technology designed with battery operation in mind
– Highly integrated HMI solution with capacitive touch sensing and TFT display
PSoC™ 6 microcontrollers CY8C6116BZI-F54,
with Arm® Cortex®-M4
CY8C6145LQI-S3F42 – PSoC™ 6 + Wi-Fi and Bluetooth® Combo: providing the total solution of IoT

Central control

Microcontroller

Voice control

MEMS
microphoneXENSIV™ MEMS
microphones for
consumer

HMI

Capacitive
touch sensing
controller

CAPSENSE™ capacitive
touch sensing controllers– State-of-the-art noise immunity (SNR > 100:1) and water rejection– Advanced inductive touch sensors make sleek, futuristic user interfaces possible

Motor control
and drive (fan)Intelligent
power module

CIPOS™ Nano ultra
compact three-phase
MOSFET IPMs

IRSM836-045MA,
IRSM836-035MB– Optimal solution for highly integrated fan motor drives and made for space-

iMOTION™ highly
IMM101T-046M
integrated motor control
IPMs– Fastest time to market with no software development required, no inverter– High-performance microphone with low self-noise (high SNR) and low

distortions, setting a the new performance benchmark for a superior user
experienc

USB-C controllers
and peripherals-

Microcontrollers

connectivity and security (cloud service, Mesh gateway)/ M0+

constrained applications with ultra compact footprint

hardware design needed, and easy motor parametrization and tuning– Lowest BOM cost with reduced BOM count and PCB size, sensorless FOC
algorithm, and no need for additional PFC controllerPowermanagement ICs

Wirelessconnectivity

Pressure sensor XENSIV™ pressure
sensors for IoT– Additional application flexibility via scripting– Smallest PCB footprint for 3-phase inverter with PQFN 12x12 mm, and no needfor heatsink up to 80W

IMC101T-T038– Fastest time to market with no programming required and easy motor
parametrization and tuning

WBG semiconductors– Lowest BOM cost with no external OPAMP or comparators required and single
shunt sensorless FOC operation (leg shunt/ hall sensors optional)

Discrete IGBT

600 V reverse conducting IKN03N60RC2,
drives 2 RC-D2
IKN04N60RC2MOSFET

600 V CoolMOS™ PFD7
superjunction MOSFETs

IPN60R1K5PFD7S,
IPN60R1K0PFD7S– Full protection for power stage and motor– Full flexibility on gate driver and power stage– Low switching losses and competitive price– Improved controllability– Humidity ruggedness– Easy to design in products drop in SMD replacement in DPAK and SOT-223– High system reliability– Enables inverterization of Small Appliance applications with SOT-223– Minimized switching losses– Power density improvement compared to latest CoolMOS™ charger technology– Increased efficiency and improved thermal behavior compared to CoolMOS™ CE

SensorsiMOTION™ highly
integrated motor
controllers (IMC)

technology for low power drives applications

EiceDRIVER™ 600 V fullbridge three-phase gate
driver ICs

6EDL04I06PT

EiceDRIVER™ 650 V
Infineon SOI half-bridge
gate driver ICs

2ED2304S06F

Microcontroller XMC™ 32-bit
XMC1000 industrial
microcontrollers withArm® Cortex®-M0

Support

Gate driver IC– BOM cost reduction and easy manufacturing– Robustness and reliability– Excellent ruggedness and noise immunity– Integrated bootstrap diode, overcurrent protection, enable and fault reporting– Integrated Bootstrap Diode for reduced BOM cost
– 50% lower level shift losses leads lower temperature operation and higher
reliability– Latch-up immune increased reliability– Flexible, small PCB footprint
XMC1301-T038F0032 – Easy 3-phase inverter implementation with a single CCU8 PWM unit, offering
ABshadow register transfer, external input for fault control, binary and floating prescaler, 16-bit to 64-bit width– POSIF interface to directly connect hall sensors and incremental encoder.
– 12-bit ADC with on-chip adjustable gain of x1, x3, x6 or x12

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61

Solutions
Applications
Digital isolators

Features and benefits
Key benefits– Complete system solution offerings for inverter, system control,– Next generation CAPSENSE™ touch-sensing technology– Faster time-to-market and saving system design efforts– One-stop-shop– Extend system lifetime and product life spans– Fast prototyping and system verification– Higher efficiency and better reliability– "Just work" and deliver robustness and intelligence– Fast user feedback even with wet interface

Induction heating inverter (voltage resonance)
Single-switch

Induction heating inverter (current resonance)
Half-bridge

Auxiliary power
supplyDriverLDO

AC-DC

DriverLDO

Controller

Sensors

Controller

Sensors

Security

User interface

Security

User interface

Wifi/
Bluetooth‒ Topology ideal for use in table top cookers up to 2.5 kW‒ Using up to 1600 V rated reverse conducting IGBT
‒ Operation range: 20 - 40 kHz

WBG semiconductors

Wifi/
BluetoothMains
85...264 V~

Resonant tankand vessel

USB-C controllers
and peripherals

Half-bridge
converter

Mains
85...264 V~

Resonant tankand vessel‒ Topology ideal for multi-hob induction integrated
induction cooktop designs‒ Operation range 25 - 75 kHz‒ Half-bridge design allows use of lowest loss
650 V IGBT for high system efficency

Sensors

Auxiliary power
supplyAC-DCIntelligent powerswitches and modules

Bridge rectifier and filter
Single-switch
converter

Mains
85...264 V~

Power
management ICs

Bridge rectifier and filter

Microcontrollers– Highly reliable and market-proven Infineon products– Evaluation and reference boards– Innovative reverse conducting IGBT technology– Cutting-edge touch-sensing technologies

IGBT discretes andsilicon power diodes

Key featuresauxiliary power, HMI, connectivity, sensor, security blocks

Induction cooking reference design
REF-SHA3K3IHWR5SYS
The REF-SHA3K3IHWR5SYS Infineon induction cooktop reference
design is a ready-to-go solution that offers a modern highperformance half bridge topology, next generation CAPSENSE™ userinterface and PSoC6™ AI connectivity module.
‒ PSoC™ with high sensitivity CAPSENSE™ control interface‒ High efficiency 650 V 40 A IGBT halfe bridge inverter‒ PSoC6™ for edge AI voice control and AIROC™ connectivity module

Click here to learn more:
www.infineon.com/induction-cooking
www.infineon.com/rch5

15-300 V MOSFETs

The huge global market for induction cooking appliances, such as induction ranges, microwave ovens, and ricecookers, is characterized by great competition and price pressure. Along with this, manufacturers must meet risingconsumer expectations and produce more reliable, energy-efficient appliances that offer a wide range of functions.
Benefits such as faster cooking, advanced functionalities, easy cleaning, and safety features play a crucial role.
Infineon products are well equipped to help you overcome all the challenges common to induction cooking
appliances. Our solutions target the increased consumer expectations regarding modern home appliances: appliances
must be energy-efficient and fully integrable, ensuring a high levels of safety and reliability. An intelligent, user-friendly,and secure user interface is essential. We support you in creating intuitive devices with an intelligent touch interface.

500-950 V MOSFETs

Enabled by Infineon’s high-efficiency power switches, secured connectivity,
and touch sensor technology for the best cooking experience

Gate-driver ICs

Induction cooking

Supportnk

Induction cooking

www.infineon.com/psoc64
62

Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs

IGBT discretes

Gate driver

Specification

Reverse conducting R6

650 V up to 75 kHz

Reverse conducting R5

650 V/1100 V/1200 V/1350 V/1600 V up to 60 kHz

Reverse conducting R5L

1400 V up to 60 kHz

EiceDRIVER™ 1ED44173N01B,
1ED44175N01B,

Low-side gate driver/25 V– High performance and low losses– High performance and low losses– High performance and lower losses– 1ED integrated with overcurrent- protec-

EiceDRIVER™ 2ED2304S06F,
2ED2182S06F, 2EDL23I06PJ

Half-bridge gate driver/650 V/600 V– Cost-effective– SOI with integrated bootstrap diode

EiceDRIVER™ 1EDI20I12AF,
1EDI20I12MF, 2ED020I12-F2

Isolated gate driver/1200 V– Galvanic isolation, separate sink/source

XMC™ 1000 series

32-bit Arm® Cortex®-M0– #1 choice to bring traditional 8-bit

XMC™ 4000 series

32-bit Arm® Cortex®-M4– Successor to traditional DSP/DSC andPSoC™ 4 series

32-bit Arm® Cortex®-M0– Tackled some of the complex portions

PSoC™ 6 series

32-bit Arm® Cortex®-M4– Dual-core Arm® Cortex®-M4 andEiceDRIVER™ 1ED44171N01B

System control

Microcontroller

Benefits

IGBT discretes andsilicon power diodes

Inverter(half-bridge/
quasi-resonant)Product familytion fault and enable functions

Intelligent powerswitches and modules

Product

output, DESAT, Miller clamp
designs to the next level32-bit MCU solutions.

Microcontrollers

Functional block

Digital isolators

Product portfolioof embedded system design making iteasierCortex®-M0+ architecture

Connectivity

Wirelessconnectivity

AIROC™ Wi-Fi + Bluetooth® combo

IEEE 802.11a/b/g/n/ac/ax Wi-Fi and Bluetooth®
5.2 in a single-chip– Technical support through our global net-

Aux power

CoolSET™

ICE5AR4770BZSUp to 15 W flyback controller with integrated
700 V MOSFET– Higher switching frequency to take

HMI
(Humanmachineinterface)

Microcontroller

PSoC™ 4 series

CAPSENSE™ technology– Most flexible and scalable low-power

Security

OPTIGA™ Trust

OPTIGA™ Trust M SLS32AIA

High-end security solution for connectedconsumer devices– The OPTIGA™ Trust M is a high-end

SensorXENSIV™
radar sensors

BGT60LTR11AIP,BGT60UTR11AIP,BGT60TR13CXENSIV™ highly integrated 60 GHz radar
sensors for consumer electronics and IoTapplications– Energy and lifetime saving,

USB-C controllers
and peripherals

work of IoT partners

advantage of smaller magnetics

Powermanagement ICs

mixed-signal architecture

security solution that provides an anchor
of trust for connecting IoT devices to thecloud

Sensors

WBG semiconductors

small form factor

Click here to learn more:
www.infineon.com/psoc64

Supportwww.infineon.com/induction-cooking
www.infineon.com/rch5

63

Solutions

Laundry machine

Applications

Laundry machine

15-300 V MOSFETs

Trusted solutions for efficient, secure, and intelligent performance

500-950 V MOSFETs

Modern laundry machines feature improved energy efficiency, low acoustic noise, water and detergent savings, aswell as smart operating cycles. Thanks to our comprehensive product portfolio, we can support any type of laundrymachines: fully-automatic front- or top-loading, semi-automatic top-loading , and fully-automatic washer-dryer
combinations or twin-type washing machines.

Gate-driver ICs

Our laundry machine product portfolio addresses solutions across the system: power, motor power, drive and control,
main controller, HMI, condition monitoring and sensing, and even security and networking such as our Mattercompliant connectivity solution.

Key benefits– Full product portfolio coverage with Infineon CoolMOS™ MOSFET’s, CoolSIC™

– One-stop-shop solutions provider for laundry machines– System cost savings– Highest power density and efficiency– Ease of use and full compatibility– Advanced sensing solutions for holisitc condition monitoring– Shorter time to market– Enhanced security

MOSFET’s, IBGT’s and CoolGaN™ HEMT switching technologies– Leading position in motor control power with CIPOS™ Micro/Tiny/Mini

Integrated Power Modules (IPM), EiceDRIVER™ gate drives, TRENCHSTOP™
IGBT6/7, CoolMOS™ , CoolSiC™ and CoolGaN™ together with 5th generation
CoolSET™ auxiliary power supply technology– Robust and reliable wireless connection coverage WI-Fi 4 to Wi-Fi 6/6E, flexible

usage, and future-proof compliant to Matter over Wi-Fi and Matter over ThreadIntelligent powerswitches and modules– XENSIV™ sensor solutions covering a wide range of use cases– Total solution and reference design, e.g. mature CAPSENSE™ Touch, motor

IGBT discretes andsilicon power diodes

Key features

Digital isolators

Features and benefits

control, Wi-Fi/BT connectivity, advantage sensing, power and drives– Trust anchor for higher cryptographic operations required, OPTIGA™ Trust M

Microcontrollers

hardware cryptographic accelerators will support host MCU with Matter
onboarding

Auxiliary power supply& PFC (passive today)

USB-C controllers
and peripherals

Application diagram
Cloud service

Condition
monitoring
sensor module

ADC
UART
PWM
PDM

MEMS microphone

PDM

MEMS microphone

Monochrome /TFT color
display

UART
SDIO

Wi-Fi / BT
combo.
custom module

QSPI

MemoryMatter over Wi-Fi

Main control
Arm®
Cortex®-M0+/M4(mid-low end)

SDIO

Arm® Cortex®-A /PSoC™-edge(high-end)

Bluetooth

PWM

WBG semiconductors

I2C

UART
SDIO

Amplifier

UART
GPIO
HMI
MCU

SPI/8080/
MIPI / RGB

GPIO
MSC

UART

SensorDial(s)

LED segment
display
Touch button /sliderSensors

SPI

SecurityPowermanagement ICs

Mobileapp

Auxiliary power supply& PFC (passive today)
Power /IPM ordiscrete

M

DrumPower /IPM ordiscrete

M

Water pump (1-2)

SDIO
ADC/PWM

ADC/PWM

Power /IPM ordiscrete

M

Motor control &sensing
MCU

Heat pump

Power /IPM ordiscrete

M
Second Drum /Pulsar WashPWM UART

Condition monitoring includes sensors to performfunctions like auto-dosing, water level detections,pressure and temperature sensing, door close/open,
fabric detection, foam detection / dispersion,
clogging combines with AI/ML learning

ADC/PWM

Bluetooth

Support

ADC/PWM

Motor control
MCU(s)ADC I2C

Condition
monitoring
Sensor Module

High-end combo.
Pulsar Washer and Drum
Laundry Machine

Click here to learn more:
www.infineon.com/washing-machine64Digital isolators

Gate-driver ICs

500-950 V MOSFETs

15-300 V MOSFETs

Applications

Solutions

Laundry machine

Product portfolio– Integrated with 700 V and 800 V avalanche rugged – Increased robustness– Higher efficiency
CoolMOS™ P7 family– Comprehensive protection features– Lower switching frequency at medium and light– Integrated frequency reduction modeloads
– Auto-restart scheme to minimize interruption– Zero standby power consumption

Specifications

Motor powerand drive – drum
motor

IM323

CIPOS™ Tiny

– Optimized for inverter power rating up to 1.5 hp – High integration and reduced footprint– Rugged SOI gate driver technology– Fast time to market– Latest TRENCHSTOP™ RCD2 technology with max. – System cost savings from smaller footprint andjunction temperature 175°C

IKD10N60RC2
IKD15N60RC2

600 V TRENCHSTOP™
RC-D2– Lowest switching losses and improved EMI– SC rating up to 3 µs
– For medium to high frequency converters– Portfolio: 6 to 15 A, with/out FWD diodes, DPAK,
TO-220FP

IPD/IPN /IPS/
CoolMOS™ P7 SJ
IPLK/IPAN
MOSFETs CoolMOS™
70R360P7S
PFD7 SJ MOSFETs
IPD/IPN /IPS/
IPLK/IPAN
70R600P7S
IPD/IPN /IPS/IPLK/
IPAN70R900P7S
IPD/IPN /IPS/IPLK/
IPAN70R1K4P7S
2ED2304S06F
6EDL04x06xT

low power drive applications especially underhigh switching frequency applications– Latest TRENCHSTOP™ 600 V RCD2 technology– Market proven and reliable solution with highvolume shipment record

Half-bridge & 3-phase
EiceDRIVER™ Gate
Driver ICs– SC rating up to 3 µs
– For low to medium frequency converters– Portfolio: 3 to 15 A DPAK, 1 to 6 A SOT-223

magnetics– Integrated Zener diode for ESD protection ≤ HBM
class 2

– Increased design flexibility while maintaining

the industry’s fastest reverse recovery time (trr)
optimized for home-appliance motor drives– Fully operational up to +650 V– Integrated bootstrap diode (BSD)– Tolerant to negative transient voltage (-VS) up to
100 V(below)

IKD06N65ET6
IGD06N65T6

IKN01N60RC2
IKN03N60RC2
IKN04N60RC2
IKN06N60RC2
IKD04N60RC2
IKD06N60RC2CIPOS™ Microintelligent power
modules (IPMs) IM241
series600V TRENCHSTOP™
RC-D2

available– UL-certified package– Design flexibility and customization– Excellent thermal performance, especially athigher frequencies– Performance optimized up to 30 kHz– Cost-optimized monolithically integrated diode insurface mount packages– Design flexibility and customization – drop-in
replacement available in DPAK and SOT223

excellent ease-of-use and an outstanding
portfolio granularity– Price competitiveness compared to similar
technologies– Extra safety margin for repetitive hardcommutation and reduced design-in effort– 30 years of product leadership (first HVIC driverin 1989)– State-of-the-art Infineon SOI technology forsuperior operational ruggedness and higher
frequency switching– 600 V 3-phase inverter including gate drivers and– bootstrap function– Fault reporting and programmable fault clear– Optimized dV/dt for loss and EMI trade offs
– Accurate overcurrent shutdown (±5%)– Advanced input filter with shoot-through– Easy design-in and fast time to market– High performance and efficiency for motor drives– Lowest switching losses and improved EMI, SC– Design flexibility and customization– Excellent thermal performance, especially at

protection– Compact package dimension ( 29x12x2.9 mm)
650 V TRENCHSTOP™
IGBT6

reduced PCB space– Optimized performance and package options– Thermal optimization– Supports increased switching frequency to reduce – Perfect combination of highest efficiency,– Low level-shift loss in high frequency applications
Motor power and IM241-S6S1J/B
drive – water drain IM241-M6S1J/B
pump/pulsar or
IM241-L6S1B
water circulation IM241-S6T2J/B
pump
IM241-M6T2J/B
IM241-L6T2B

available

rating up to 3 µs
– For medium to high frequency converters– Portfolio: 6 to 15 A, with/out FWD diodes, DPAK,
TO220FP– SC rating up to 3 µs
– For low to medium frequency converters– Portfolio: 1 to 6 A SOT-223

Powermanagement ICs

650 V TRENCHSTOP™
IGBT6– Best optimized performance for consumer and– UL-certified package– Fast time to market– System cost savings from smaller footprint and

WBG semiconductors

IKD06N65ET6
IKD08N65ET6
IKA08N65ET6
IKA10N65ET6
IKA15N65ET6– Optimized performance and package options

Sensors

CIPOS™ Mini IM523
intelligent power
modules (IMPs)

reduced PCB space– Robust and pin-compatible design

up to 500 W– Optimized loss/EMI based for washing machines– Superior humidity robustness (H3TRB-test

SupportIM523-S/M/L/X

Benefits

Microcontrollers

Product family

IGBT discretes andsilicon power diodes

CoolSET™ 5thgeneration AC-DC
integrated powerstagesIntelligent powerswitches and modules

Product
ICE3BR0665J
ICE3A2065ELJ
ICE3RBR065JG
ICE3A1065ELJ
ICE3BR1765J
ICE2QR1765G
ICE2QR0665

USB-C controllers
and peripherals

Functional block
Auxiliary power
supply & PFC(passive)

qualified)– Cost and space-effective

higher frequencies– Performance optimized up to 30 kHz– Cost optimized monolithically integrated diode insurface mount packages– Design flexibility and customization – drop-in
replacement available in DPAK and SOT223– Thermal optimization

Click here to learn more:
www.infineon.com/washing-machine
65

(HBM Class 2)– Integrated overcurrent protection (OCP) andMotor power and IKCM15/20L60GA
drive – heat pump IKCM20L60GD
IM535
U6D (30 A)

CIPOS™ Mini intelligent power modules(IMPs)– Broad portfolio from inverter (3ph) to PFC+IKWH20N65WR6

fault reporting– Accurate (+/-5%), fast, overcurrent protection
for PFC in home appliances

inverter in a single package High integrationof bootstrap circuit, thermistor, as well as PFC– Excellent peak current capability to handle
high current at startup

TRENCHSTOP™ 6 IGBT – Monolithically integrated diode– Operating range up to 20 kHz
RC-D2– Short circuit capability 3 µs at 400 V Vcc ,TC = 150°C– Drop-in SMD replacement in DPAK and SOT– Pb-free lead plating, RoHs compliant– Integrated bootstrap diodeHalf-bridge and3-phase EiceDRIVER™ – Overcurrent protection– Enable and fault reporting
Gate Driver ICs
TRENCHSTOP™ 5
IGBT– Lowest VCE(sat) 1.4 V at 25°C
– Monolithically integrated diode– Lowest Esw– High creepage and clearance package– 30 years of product leadership from (first HVIC
driver in 1989)– State-of-the-art Infineon SOI technology forsuperior operational ruggedness and higher
frequency switching– Comprehensive portfolio of single and dual

500-950 V MOSFETs– Fully operational up to +650 V
Half-bridge and3-phase EiceDRIVER™ – Integrated bootstrap diode (BSD)– Tolerant to negative transient voltage (-VS) up
Gate Driver ICs
to 100 V– Low level-shift loss in high frequency
applications

15-300 V MOSFETs

2 Ω Supporting cost effective designs with SMD
solutionsLow-side EiceDRIVER™ Gate Driver ICs

6EDL04N06PT–– Integrated fast body diode with ultralow Qrr– Portfolio with wide range of RDS(on) values ≤1ED44173/5/6N01
1ED44171N01B
IR4427
IRS4427
IRS44273

IKD10N60RC2

Benefits

Applications

Specifications– Integrated Zener diode for ESD protection

channel low-side drivers– Cost and space-effective– Market-proven– Market proven solution chosen by global
leading washing machine OEMs/ODMs– Excellent thermal performance– Higher power capability– Minimized system size and assembly process– Low switching loses on competitive price– Humidity ruggedness improvement– High system reliability– Improved controllability– Easy to design in products

Gate-driver ICs

6EDL04x06xT
2ED2304S06F

Product family
600 V CoolMOS™
PFD7Digital isolators

Product

Motor power and IPD60R1K0PFD7S
drive – water drain IPN60R1K5PFD7S
pump/pulsar orwater circulationpump– Space saving package– Improved energy efficiency– State-of-the-art Infineon SOI technology forsuperior operational ruggedness and higher
frequency switching

IGBT discretes andsilicon power diodes

Functional block

Solutions

Laundry machine– Improved price-performance ratio– Optimized diode for PFC and welding
applications– Lowest switching losses– Improved reliability against package

PSoC™ 4

XMC7000
XMC1302
XMC1402

XMC™

PSoC™ 4100S Plus
PSoC™ 4100T

PSoC™ 4

5 IGBT

motor control algorithm and total solution forhome appliances– Versatile real-time motor and power stage
control peripherals– CORDIC maths processor for complex– Great platfomr flexibility for customized

solutions optimized for end-system needs– Comprehensive portfolio of available chiptechnologies– Reduce system BOM cost
– Total solution with full set of features andprotections– Fast time to market– Scalable to various control schemes fromsingle motor up to dual motor and PFC control

trigonometric calculation for motor control
algorithms

PSoC™ Edge

– HMI and system control (2-in-1 solution)– Reliable and stable capacitive touch sensing– Large pin pitch package,– Full set of features and protections,– Wide voltage range– Fast time to market– Integrated with OPA/CMP, TCPWM– Reduced BOM cost
– 32-bit MCU subsystems– Supporting both “always-on” low power– Based on high performance Arm® Cortex®-M55, and high-performance operation, in a fully
including Helium™ DSP support paired withArm® Ethos™-U55 and Cortex®-M33 paired
Infineon’s ultra-low power NNLite neuralnetwork accelerator– Secured enclave based on Infineon Edge
Protect Technology

integrated MCU with right-sized peripheral andon-chip memories– Advanced machine learning capabilities:
voice and natural language processing,vision, pressure/gesture/motion, predictive
maintenance, and anomaly detection– Audio/voice– Motor control

Sensors

HMI, MPU, & Edge PSoC™ E81
Ai/ML computing PSoC™ E83
PSoC™ E84

diode– 4-pin Kelvin emitter package– Compact module design– Reliable mounting system– PCB layout-friendly– Configuration flexibility– High reliability and quality– Integrated with OPA/CMP, TCPWM,– Supported by mature, validated and reliablePowermanagement ICs

Main controller
microcontroller

PSoC™ 4100S
PSoC™ 4100s Plus
PSoC™ 4500S

increased power density

WBG semiconductors

Motor control
microcontrollerof silicon diode), low EMI– Ultra-short IGBT response time due to sense pin – Higher frequency operations– Best-in-class fast switching TRENCHSTOP™ 5 – Bidirectional current flow
– Easy design replacement with TRENCHSTOP™
IGBT combined with with SiC Schottky barrier

Microcontrollers

F3L200Ro7W255F_B11 EasyPACK™ IGBT
F3LxxRO7W2H3F_B11 modules
FS3LxxRO7W2H5F_B11
DFxxxRO7WIH5FP_Bxx– Reduced voltage-overshoots (caused by dirr/dt – High efficiency for reduced cooling effort orUSB-C controllers
and peripherals

CoolSiC™ hybrid
discretes

Intelligent powerswitches and modules

contamination

IKWxxN65RH5
IKWxxN65SS5
IKZAxxN65RH\5AIKWxxN65RF5
IKZAxxN65SS5

Click here to learn more:
Supportwww.infineon.com/washing-machine66

BGT60TR13C

Benefits

XENSIV™ barometricpressure sensor– Pressure sensor for water pressure and filter– IPX8 certified for additional robustness (water,

XENSIV™ Radar 60 GHz

clockage– High precision and accuracy:– Precision: ±0.002 hPa– Rel. accuracy: ± 0.06 hPa– Sense presence up to 10 m (very high sensitivity,
even recognizes breathing and tiny motions)Applications

Specifications
dust, humidity)– Software solution and turnkey solution available for high-end presence detection– Small size
– 60 GHz with integrated antennas to reduce

15-300 V MOSFETs

DPS368

Product family

design-effort– Software solution and turnkey solution available for high-end presence detection

XENSIV™ Radar 60 GHz

TLI493D-W2BW
TLx496x
TLI4971
TLI4966G
TLE4997E2

XENSIV™ Hall sensors
XENSIV™ current
sensors

TLI493D-W2BW

3D magnetic sensors– Sense motion up to 10 m without using a– System cost effective– Motion detection
microcontroller– Contactless measurement principle minimizing – Contactless measurement principle minimiwear and tear: position, speed and direction
monitoring of components, linear movement
and vibration open/close lid detection

ments using XENSIV™ Hall sensors– Better design flexibility as with mechanical/– Improved mechanical design flexibility with 3D
hall technology

sensor (e.g., HMI interfaces) Extremely small
size, slim PCB design, high design flexibility(lateral, vertical)– Highest SNR to detect voice in noisy devices

PSoC™ 4– 32-bit MCU subsystem, 48-MHz Arm® Cortex®- – Ultralow power touch HMI solution based on
M0+ CPU with single-cycle multiply– Noise monitoring at motor and compressor

Digital isolators

XENSIV™ MEMS
microphone

and from long distances– Ultrasonic measurements

Gate-driver ICs– Push and rotation functionality with a single

an integrated “Always-On” sensing technology– Low-power 1.71 V to 5.5 V operation– Robust and reliable touch HMI solution for– Fifth-generation CAPSENSE™ sensing
harsh environments– Serial communication - reconfigurable I2C, SPI – Low power operation and improved per-

IGBT discretes andsilicon power diodes

Water level
PSoC™ 4000T
detection(CAPSENSE™ &inductive sensing)

zing wear and tear

– Door contact, weight and imbalance measureresistive solution– 3D sensor in WLB package– Software modules supporting XMC™ andPSoC™

IM69D128S
IM72D128
IM68A130
IM70A135
IM73A135

500-950 V MOSFETs

BGT60LTR11AIP

or UART functionality in one block with master/ formance to enable next generation of user
slave I2C functionality in the otherexperience– Timing and pulse-width modulation– Industry-standard tool compatibility– Up to 21 programmable GPIO pins
– Comprehensive collection of multi-platform– ModusToolbox™ softwaretools and software libraries

OPTIGA™ Trust M

OPTIGA™ Trust

OPTIGA™ Trust B

OPTIGA™ Trust

SLE954150017XTSA1– -CC EAL 6+ security level– Connected device security– 10 kByte NWM– ECC384 cryptography– I2C interface– Connected device security, toolbox based– CC EAL 6+ security level– 10 kByte security level– ECC384 /RSA2K cryptography– I2C interface– Shorter time to market– Cost effective solution– Zero touch provisioning– Protection– Future-proven– One-stop-shop turnkey solution– Shorter time to market– Cost reduction– Zero touch provisioning– Protection– Future-proven– -Basic security level– Authentication– 64 Byte NWM– ECC131 cryptography– SWI interface
OPTIGA™ Authenticate S – 4 authentication modes (one-way, mutual,– One-stop-shop turnkey solution– Shorter time to market -Cost reduction– Zero touch provisioning– Protection– Future-proven– Protection of OEMs and consumers against– 4 lifecycle counters with independent kill

– Additional customer services, such as alerts– 3 types of lockable NVM sizes (1 K, 2 K, 5 Kbit)– 3 temperature options (standard -40 to 85°C/– No need to invest in security know-how– Effortless implementation with full systemhost binding and host support)
structures

extended -40 to 105°C/ special -40 to 120°C)

Intelligent powerswitches and modules

OPTIGA™ Trust

Microcontrollers

Authentication

OPTIGA™ Trust X

USB-C controllers
and peripherals

Security

counterfeited devices

when spare parts need replacing

integration support including embedded software, host software, full reference board basedon PSoC™ 6 and with demo software and full
SWI&I2C + GPO)
documentation– Host code software – with new OS library– Tiny and robust TSNP SMD package optimized– 1.5 x 1.5 x 0.38 mm PG-TSNP-6-12 package
for small devices gives freedom to design even
– Asymmetric cryptography with secured unique very small products
identity for each chip
– Infineon proprietary protection against reverse
engineering (PRE)– Message authentication code providing mutual
authentication– Capless Low dropout (LDO) regulator– 2 ECC 163-bit key pairs and 193-bit ODC– 2 serial communication options (on-chip

AIROC™ Wi-Fi +Bluetooth® Combos
Wi-Fi 4

– Unique home appliances solution offering– Ease of use and full compatibility
Wi-Fi 4, Bluetooth® 5 and WPA 3 allowing smart – Connectivity for remote management– Cost-effective solution
home certification (WFA certificate)CYW4373/E

AIROC™ Wi-Fi +Bluetooth® Combos
Wi-Fi 5– Wi-Fi 5 dual band (2.4 GHz and 5 GHz)
– Ease of use and full compatibility– Capable of beam-forming for increased range – Connectivity for remote management– External PA (E-version) on module also increa- – High data throughput

CYW55513
CYW55571/2/3

AIROC™ Wi-Fi +Bluetooth® Combos
Wi-Fi 6

– Tri-band, (2.4 GHz, 5 GHz, 6 GHz)
– Target wake time (TWT): Today router is mas-

– Ease of use and full compatibility– Congestion and future proof– Low power consumption

CYW20829

AIROC™ Bluetooth® LE
BT5.2– Highly integrated Bluetooth® LE 5.4 MCU– 96 MHz Arm Cortex M33 – Application MCU– 48 MHz Arm Cortex M33 – Bluetooth® Sub-

– Industry’s best range and noise immunity– Future proof your designs and unlock new use

sing range

ter, but it allows end device to negotiate withthe router when to wake up– Higher modulation schemes: Even higher data
through-put

system– 256 KB / 96 KB SRAM – Bluetooth® LE– 48 MHz QSPI/SMIF with XIP, 32 KB Cache– On-the-fly encryption for off-chip Flash– Secure Boot & Crypto HW engine– TX Power: up to +10 dBm– Robust Receive sensitivity of -106 dBm– 1.7 to 3.6 V supply voltage range– 32 Programmable GPIO
– Upto 85°C operating temperature
CYW20835

AIROC™ Bluetooth® LE
BT5.4

SensorsCYW4338/9,
CYW43012– 96 MHz Arm® Cortex® M4 microcontroller unit

MCU with floating point unit (FPU)– Supports serial wire debug (SWD)– Runs Bluetooth® stack and application– Complies with Bluetooth® core specification 5.4– Supports Adaptive Frequency Hopping (AFH)– Programmable TX power up to 12 dBm– Rx sensitivity -94.5 dBm (Bluetooth® LE)

SupportConnectivity

Powermanagement ICs

Condition
monitoring &sensing

Product

WBG semiconductors

Functional block

Solutions

Laundry machinecases with Bluetooth® LE 5.4– Reduce system cost with highly integrated MCU
and “right sized” external flash– Longer battery life with low power connection– No dongle for ultra low latency HID– Reliable and robust connectivity due to superior RF performance– Ability to do compute at the edge for Bluetooth® LE use cases– Built on market proven wireless IP maximum
interoperability

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www.infineon.com/washing-machine67

Solutions

Tumble dryer

Applications

Tumble dryer

15-300 V MOSFETs

Elevating performance with smart, efficient,and secure semiconductor solutions

Key benefits– Full product portfolio coverage with Infineon CoolMOS™ MOSFET’s, CoolSIC™

– One-stop-shop solutions for the tumble dryers covering– System cost-savings– Highest power density and efficiency– Ease of use and full compatibility– Advanced sensing solutions for holisitc condition monitoring– Shorter time to market– Enhanced security

MOSFET’s, IBGT’s and CoolGaN™ HEMT switching technologies.

– Leading position in motor control power with CIPOS™ Micro/Tiny/Mini

Integrated Power Modules (IPM), EiceDRIVER™ gate drive, TRENCHSTOP™
IGBT6/7, CoolMOS™ , CoolSIC™ and CoolGaN™ together with 5th generation
CoolSET™ auxiliary power supply technology– Robust and reliable wireless connection coverage Wi-Fi 4 to Wi-Fi 6/6E, flexible

usage, and future-proof compliant to matter over Wi-Fi and matter over Thread– XENSIV™ sensor solutions covering a wide range of use cases– Total solution and reference design, e.g., Mature CAPSENSE™ Touch, motor

Intelligent powerswitches and modules

Key features

IGBT discretes andsilicon power diodes

Features and benefits

Digital isolators

Infineon offers complete system solutions for all major components ranging from AC-DC power supply to advanced
motor control systems and embedded microcontroller units (MCU), through connectivity, security, power management
systems, and interfacing, to home networking solutions. Also, in a smarter world, our new machine learning (ML) andartificial intelligence (AI), edge-based MCUs offer real cost-effective ways to improve the user experience and appeal ofhome appliances.

Gate-driver ICs

500-950 V MOSFETs

Smart dryer designs keep evolving with new features such as wireless connectivity, voice recognition, advanced
sensing capabilities, predictive maintenance, and energy-efficient heat pump systems to enhance functionality,
efficiency, and seamless integration into both commercial and residential IoT ecosystems. Our products and systemsolutions help you design dryers with maximum energy efficiency, reliable and precise sensing solutions, andadvanced control, connectivity, and security solutions.

Microcontrollers

control, Wi-Fi/BT connectivity, advantage sensing, power drive, and more

– Trust anchor for higher cryptographic operations required, OPTIGA™ Trust

USB-C controllers
and peripherals

M hardware cryptographic accelerators will support host MCU with Matter
onboarding

Application diagram
Auxiliary power supply
Cloud service

I2C

Condition
monitoring
sensor module

ADC
PWM

MEMS microphone
MEMS microphone

Monochrome /TFT color
display

PDM
PDM

UART

UART

SDIO

SDIO

Wi-Fi / BT
combo.
custom module

QSPI

MemoryWBG semiconductors

SPI

Matter over Wi-Fi

Main control
Arm®
Cortex®-M0+/M4(mid-low end)Arm® Cortex®-A /PSoC™-edge(high-end)

UART
HMI
MCU

SPI/8080/
MIPI / RGB

SensorSensors

SecurityPowermanagement ICs

Mobileapp

Dial(s)

LED segment
display

SupportUART

ADC / PWM

Motor control
MCU(s)

Power /IPM ordiscrete

M

Drum

M

Heat pump

Active PFC

ADC / PWM

Power /IPM ordiscrete

Click here to learn more:
www.infineon.com/tumble-dryer68

Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators

Product portfolio
CoolSET™ 5thgeneration AC-DC
integrated powerstages– Integrated with 700 V and 800 V avalanche rugged – Increased robustness– Higher efficiency
CoolMOS™ P7 family– Comprehensive protection features– Lower switching frequency at medium and light– Integrated frequency reduction modeloads
– Auto-restart scheme to minimize interruption– Zero standby power consumption

Motor powerand drive – drum
motor inverter

IM241-L6T2B
IM241-L6S1B

CIPOS™ Microintelligent power
modules (IPMs)– Compact package size (20%+ smaller thanavailable– UL certified package– Fast time to market– System cost savings from smaller footprint andreduced PCB space– Optimized performance and package options
available– UL certified package– Better controllability over the di/dt in order to

IKN01N60RC2
TRENCHSTOP™ 6 IGBTIKN03N60RC2
RC-DC
IKN04N60RC2
IKN06N60RC2
IKND04N60RC2IKNDO6N60RC2
IKND10N60RC2
IKND15N60RC2– Optimized half rated diode and 3 µs SC capability– -600 V reverse conducting drives

IPD/IPN /IPS/
IPLK/IPAN
70R360P7S
IPD/IPN /IPS/
IPLK/IPAN
70R600P7S
IPD/IPN /IPS/IPLK/
IPAN70R900P7S
IPD/IPN /IPS/IPLK/
IPAN70R1K4P7S

CoolMOS™ P7 SJMOSFETs
CoolMOS™ PFD7 SJ
MOSFETs– Supports increased switching frequency to reduce – Perfect combination of highest efficiency,

2ED2304S06F
6EDL04x06xT

Half-bridge and3-phase EiceDRIVER™
gate driver ICs

RC-DC2 available in DPAK and SOT-223
a new price/performance standard

class 2

– Increased design flexibility while maintaining

the industry’s fastest reverse recovery time (trr)
optimized for home appliance motor drives– Fully operational up to +650 V– Integrated bootstrap diode (BSD)– Tolerant to negative transient voltage (-VS) up
to 100 V

excellent ease of use and an outstanding portfolio
granularity– Price competitiveness compared to similar
technologies– Extra safety margin for repetitive hardcommutation and reduced design-in effort

WBG semiconductors

magnetics– Integrated Zener diode for ESD protection ≤ HBM(below)

IKN01N60RC2(SOT-223)
IKN03N60RC2(SOT-223)
IKN04N60RC2(SOT-223)
IKN06N60RC2(SOT-223)
IKD04N60RC2(DPAK)
IKD06N60RC2(DPAK)

further reduce EMI compared to RC-DC series– Improved high voltage humidity robustness– Ease to design products – drop-in replacement– Low switching losses at competitive price, setting– Low level-shift loss in high frequency applications
Motor power and IM241-S6S1J/B
drive – water drain IM241-M6S1J/B
pump/ pulsar or
IM241-L6S1B
water circulation IM241-S6T2J/B
pump inverter
IM241-M6T2J/B
IM241-L6T2BIntelligent powerswitches and modules

low power drive applications especially underhigh switching frequency applications– Latest TRENCHSTOP™ 600 V RCD2 technology– Market proven and reliable solution with highvolume shipment record

reduced PCB space– Optimized performance and package options

Microcontrollers– Best optimized performance for consumer and– Fast time to market– System cost savings from smaller footprint andUSB-C controllers
and peripherals

competitors)– Wide range of footprint compatible part numbers– Temperature feedback option– Screw hole available for heatsink mount

Benefits– 30 years of product leadership from IRF portfolio(first HVIC driver in 1989)– State-of-the-art Infineon SOI technology forsuperior operational ruggedness and higher
frequency switching

Sensors

CIPOS™ Mini IM523
intelligent power
modules (IMPs)Specifications– 600 V 3-phase inverter including gate drivers and – Easy design-in and fast time to market– High performance and efficiency for motor drives
bootstrap function– Fault reporting and programmable fault clear
up to 500 W– Optimized dV/dt for loss and EMI trade offs
– Optimized loss/EMI based for washing machines– Accurate overcurrent shutdown (±5%)
Superior humidity robustness (H3TRB-test– Advanced input filter with shoot-throughqualified)– Cost and space-effective
protection– Compact package dimension ( 29x12x2.9 mm)
TRENCHSTOP™ 6 IGBT – Cost optimized monolithically integrated diode in – Better controllability over the di/dt to further
CIPOS™ Microintelligent power
modules (IPMs) IM241
series

RC-D2 600 V

surface mount packages– SC rating up to 3 µs
– For low to medium frequency converters– Portfolio: 3 to 15 A DPAK; 1 to 6 A SOT-223

SupportIM523-S/M/L/X

Product family

IGBT discretes andsilicon power diodes

Product
ICE3BR0665J
ICE3A2065ELJ
ICE3RBR065JG
ICE3A1065ELJ
ICE3BR1765J
ICE2QR1765G
ICE2QR0665

Power
management ICs

Functional block
Auxiliary power
supplyreduce EMI compared to RC-D/DF series– Improved high voltage humidity robustness– Easy to design products - drop in replacement– RC-D2 available in DPAK and SOT-223– Low switching losses at competitive price, setting
a new price/performance standard

Click here to learn more:
www.infineon.com/tumble-dryer69

Solutions

Tumble dryer

fault reporting– Accurate (+/-5%), fast, overcurrent protection
for PFC in home appliances

Applications

channel low-side drivers– Cost and space-effective– Market-proven

Half-bridge & 3-phase
EiceDRIVER™ Gate
Driver ICs

TRENCHSTOP™ 5 IGBT

– Drop-in SMD replacement in DPAK and SOT– Pb-free lead plating, RoHs compliant– Integrated bootstrap diode– Overcurrent protection– Enable and fault reporting– Lowest VCE(sat) 1.4 V at 25°C
– Monolithically integrated diode– Lowest Esw– High creepage and clearance package

500-950 V MOSFETs– Monolithically integrated diode– Operating range up to 20 kHz– Short circuit capability 3 µs at 400V Vcc ,– Low switching loses on competitive price– Humidity ruggedness improvement– High system reliability– Improved controllability– Easy to design in products

Gate-driver ICs

TRENCHSTOP™ 6 IGBT
RC-D2

– Space saving package– Improved energy efficiency– State-of-the-art Infineon SOI technology forsuperior operational ruggedness and higher
frequency switching

Digital isolators

IKWH20N65WR6– Comprehensive portfolio of single and dual

CIPOS™ Mini intelligent – Broad portfolio from inverter (3ph) to PFC+
– Market proven solution chosen by global
inverter in a single package
leading washing machine OEMs/ODMs
power modules (IMPs)– High integration of bootstrap circuit,– Excellent thermal performance– Higher power capability
thermistor, as well as PFC– Excellent peak current capability to handle high – Minimized system size & assembly processcurrent at startup

TC = 150°C

6EDL04N06PT

15-300 V MOSFETs– Integrated overcurrent protection (OCP) andsuperior operational ruggedness and higher
frequency switching– Improved price-performance ratio– Optimized diode for PFC and welding
applications– Lowest switching losses– Improved reliability against package
contamination

Motor control –microcontroller
HMI, CAPSENSE™,& inductive
sensing on PSoC™
4 Series

Main controller microcontroller

IKWxxN65RH5
IKWxxN65SS5
IKZAxxN65RH\5AIKWxxN65RF5
IKZAxxN65SS5

CoolSiC™ hybrid
discretes

F3L200Ro7W255F_B11
F3LxxRO7W2H3F_B11
FS3LxxRO7W2H5F_B11
DFxxxRO7WIH5FP_Bxx

EasyPACK™ IGBT
modules

PSoC™ 4100S
PSoC™ 4100s Plus
PSoC™ 4500S

PSoC™ 4

XMC7000
XMC1302
XMC1402

XMC™

PSoC™ 4100S Plus
PSoC™ 4100T

PSoC™ 4of silicon diode), low EMI

increased power density

control peripherals

motor up to dual motor and PFC control– Ultrashort IGBT response time due to sense pin – Higher frequency operations– Best-in-class fast switching TRENCHSTOP™ 5 – Bidirectional current flow
IGBT combined with SiC Schottky barrier diode – Easy design replacement with TRENCHSTOP™
– 4-pin Kelvin emitter package
5 IGBT– Compact module design– Great platfomr flexibility for customized– Reliable mounting systemsolutions optimized for end-system needs– PCB layout-friendly– Comprehensive portfolio of available chip
– Configuration flexibility
technologies– High reliability and quality– HMI and system control (2-in-1 solution)– Reliable & stable capacitive and inductive touch– Large pin pitch package,
sensing– Wide voltage range– Full set of features and protections,– Integrated with OPA/CMP, TCPWM– Fast time to market– Reduced BOM cost
– Versatile real-time motor and power stage– Scalable to various control schemes from single– CORDC Maths accelerator for complex algorithm
functions for motor control

PSOC™ Edge

– HMI and system control (2-in-1 solution)– Large pin pitch package,– Wide voltage range– Integrated with OPA/CMP, TCPWM– 32-bit MCU subsystems– Based on high performance Arm® Cortex®-M55,
including Helium™ DSP support paired withArm® Ethos™-U55 and Cortex®-M33 paired
Infineon’s ultra-low power NNLite neuralnetwork accelerator– Secured enclave based on Infineon Edge
Protect Technology– Reliable and stable capacitive touch sensing– Full set of features and protections,– Fast time to market– Reduced BOM cost
– Supporting both “always-on” low powerand high-performance operation, in a fully
integrated MCU with right-sized peripheral andon-chip memories.
– Advanced machine learning capabilities:
voice and natural language processing,vision, pressure/gesture/motion, predictive
maintenance and anomaly detection– Audio/voice– Motor control

Sensors

HMI, MPU, & Edge PSOC™ E81
Ai/ML computing PSOC™ E82
PSOC™ E84

– Reduced voltage-overshoots (caused by dirr/dt – High efficiency for reduced cooling effort or

IGBT discretes andsilicon power diodes

applications

Low-side EiceDRIVER™
Gate Driver ICs

portfolio (first HVIC driver in 1989)– State-of-the-art Infineon SOI technology forIntelligent powerswitches and modules

IKD10N60RC2

to 100 V– Low level-shift loss in high frequency

Benefits– 30 years of product leadership from IRF

Microcontrollers

Motor power and IKCM15/20L60GA
drive – heat pump IKCM20L60GD
inverter
IM535-U6D (30 A)

Specifications– Fully operational up to +650 V– Integrated bootstrap diode (BSD)– Tolerant to negative transient voltage (-VS) up

USB-C controllers
and peripherals

1ED44173/5/6N01
1ED44171N01B
IR4427
IRS4427
IRS44273

Product family
Half-bridge and3-phase EiceDRIVER™
Gate Driver ICs

Powermanagement ICs

Product

WBG semiconductors

Functional block

Motor power and 6EDL04x06xT
drive – water drain 2ED2304S06F
pump/ pulsar orwater circulation
pump inverter

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Supportwww.infineon.com/tumble-dryer70

Solutions

Tumble dryer

XENSIV™ Hall sensors
XENSIV™ current sensors

TLI493D-W2BW

3D magnetic sensors– System cost effective– Motion detection
microcontroller– Contactless measurement principle minimizing – Contactless measurement principle minimizing
wear and tear: position, speed & direction
monitoring of components, linear movement
and vibration open/close lid detection

wear and tear

– Door contact, weight and imbalancemeasurements using XENSIV™ Hall sensors– Better design flexibility as with mechanical/
resistive solution– 3D sensor in WLB package– Improved mechanical design flexibility with 3D– Software modules supporting XMC™ and PSoC™ hall technology– Push and rotation functionality with a single
sensor (e.g., HMI interfaces)– Extremely small size, slim PCB design, highdesign flexibility (lateral, vertical)

Water level
PSoC™ 4000T
detection(CapSense™ &inductive sensing)

SecurityXENSIV™ MEMS

– Highest SNR to detect voice in noisy devices– Noise monitoring at motor and compressor,

PSoC™ 4– 32-bit MCU subsystem, 48-MHz Arm®

– Ultralow power touch HMI solution based on an

and from long distances

Cortex®-M0+ CPU with single-cycle multiply– Low-power 1.71 V to 5.5 V operation– Fifth-generation CAPSENSE™ sensing– Serial communication - reconfigurable I2C, SPI
or UART functionality in one block with master/slave I2C functionality in the other– Timing and pulse-width modulation– Up to 21 programmable GPIO pins
– ModusToolbox™ software

remote diagnostics and voice activation

integrated “always-on” sensing technology– Robust and reliable touch HMI solution forharsh environments– Low power operation and improved– performance to enable next generation of user
experience– Industry-standard tool compatibility– Comprehensive collection of multi-platform
tools and software libraries

Intelligent powerswitches and modules

IM69D128S
IM72D128
IM68A130
IM70A135
IM73A135– Easy certificate-based device registration to all – One-stop-shop turnkey solution– Shorter time to market
major cloud service providers– Cost reduction– Zero touch provisioning– Protection– Future-proven
OPTIGA™ Authenticate S – 4 authentication modes (one-way, mutual, host – Protection of OEMs and consumers against

OPTIGA™ Trust X, TPM OPTIGA™ Trust& MTR
OPTIGA™ Trust B,

SLE954150017XTSA1

binding and host support)

counterfeited devices– 4 lifecycle counters with independent kill

– Additional customer services, such as alerts– 3 types of lockable NVM sizes (1 K, 2 K, 5 Kbit)– 3 temperature options (standard -40 to 85°C/– No need to invest in security know-how– Effortless implementation with full system

structures

extended -40 to 105°C/ special -40 to 120°C)

when spare parts need replacing

integration support including embedded
software, host software, full reference board
based on PSoC™ 6 and with demo software andSWI&I2 C + GPO)
full documentation– Host code software – with new OS library– Tiny and robust TSNP SMD package optimized– 1.5 x 1.5 x 0.38 mm PG-TSNP-6-12 package
for small devices gives freedom to design even
– Asymmetric cryptography with secured unique very small products
identity for each chip
– Infineon proprietary protection against reverse
engineering (PRE)– Message authentication code providing mutual
authentication– Capless Low dropout (LDO) regulator
CYW4338/9, CYW43012 AIROC™ Wi-Fi +CYW43022
Bluetooth® Combos
Wi-Fi 4

– Unique home appliances solution offering Wi-Fi – Cost-effective

CYW4373E

AIROC™ Wi-Fi +Bluetooth® Combos
Wi-Fi 5– Wi-Fi 5 dual band (2.4 GHz and 5 GHz)
– Capable of beam-forming for increased range– External PA (E-version) on module also

CYW55513
CYW55571/2/3 -AIROC™ Wi-Fi +Bluetooth® Combos
Wi-Fi 6

– Tri-band, (2.4 GHz, 5 GHz, 6 GHz)
– High data throughput– Target wake time (TWT): allowing end-device to – Congestion/future-proof– Low power consumption
negotiate with the router when to „wake up“– Higher modulation schemes: even higher data

CYW20829

AIROC™ Bluetooth® LE
BT5.2– Highly integrated Bluetooth® LE 5.4 MCU– 96 MHz Arm® Cortex®-M33 – Application MCU– 48 MHz Arm® Cortex®-M33 – Bluetooth®

4, Bluetooth® 5 and WPA 3 allowing smart homecertification (WFA certificate)– WPA3 security– Voice command– Audio/video transfer

WBG semiconductors– 2 ECC 163-bit key pairs and 193-bit ODC– 2 serial communication options (on-chip– High data throughput– Congestion/future-proof

increasing range

Sensors

Connectivity

throughput

Subsystem– 256 KB / 96 KB SRAM – Bluetooth® LE– 48 MHz QSPI/SMIF with XIP, 32 KB Cache– On-the-fly encryption for off-chip Flash– Secure Boot and Crypto HW engine– TX Power: up to +10 dBm– Robust Receive sensitivity of -106 dBm– 1.7 to 3.6 V supply voltage range– 32 Programmable GPIO
– Upto 85°C operating temperature
CYW20835

AIROC™ Bluetooth® LE
BT5.4– 96 MHz Arm® Cortex®-M4 microcontroller unit

MCU with floating point unit (FPU)– Supports serial wire debug (SWD)– Runs Bluetooth® stack and application– Complies with Bluetooth® core specification 5.4– Supports Adaptive Frequency Hopping (AFH)– Programmable TX power up to 12 dBm– Rx sensitivity -94.5 dBm (Bluetooth® LE)

15-300 V MOSFETs

available for high-end presence detection– Sense motion up to 10 m without using a

500-950 V MOSFETs

TLI493D-W2BW
TLx496x
TLI4971
TLI4966G
TLE4997E2

design-effort– Software solution and turnkey solution

Gate-driver ICs

XENSIV™ Radar 60 GHz

sensitivity, even recognizes breathing and tiny
motions)

Digital isolators

BGT60LTR11AIP– Sense presence up to 10 m (very high

IGBT discretes andsilicon power diodes

XENSIV™ Radar 60 GHz

available for high-end presence detection– Air flow measurement in the system– 60 GHz with integrated antennas to reduce

Microcontrollers

dust, humidity

BGT60TR13C

Benefits

Applications

Specifications– High precision and accuracy:– Very rugged (IPX8 certified) even for A/C– Precision: ±0.002 hPa
outdoor use– Rel. accuracy: ± 0.06 hPa– Small size
– IPX8 certified for additional robustness (water, – Software solution and turnkey solution

USB-C controllers
and peripherals

Product family
XENSIV™ barometricpressure sensor

Powermanagement ICs

Product
DPS368– Industry’s best range and noise immunity– Future proof your designs and unlock new use
cases with Bluetooth® LE 5.4– Reduce system cost with highly integrated MCU
and “right sized” external flash– Longer battery life with low power connection– No dongle for ultra low latency HID– Reliable and robust connectivity due to superior
RF performance– Ability to do compute at the edge for Bluetooth®
LE use cases– Built on market proven wireless IP maximum
interoperability

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SupportFunctional block
Conditional
monitoring &sensingSolutions

Cordless vacuum cleaner

Applications

Cordless vacuum cleaner

15-300 V MOSFETs

Efficient, compact, and quieter motor control solution for
designing next-generation cordless vacuum cleaner

500-950 V MOSFETs

It is a common misconception that cordless vacuum cleaners are less powerful than their corded counterparts. With
Infineon’s solution, we help to create a battery-powered cordless vacuum that delivers as much suction power as acorded vacuum and maintains the convenience and flexibility of moving in the room.
Our products aim to revolutionize the cleaning experience with

Gate-driver ICs‒ Efficient and compact motor control to deliver optimal cleaning performance‒ Fast battery charger with USB-C charging and wireless charging to reduce charging time
‒ Advanced battery management system (BMS)‒ Reliable HMI, wireless connectivity, and a variety of sensors– Extend system lifetime– Convenient selection of the right-fit products– One-stop-shop for building smart home appliance– Compact design reducing system size and cost for the highest power density– Fast time-to-market

IGBT discretes andsilicon power diodes

Key benefits– High reliable and market-proven Infineon products– Comprehensive product/solution portfolio for motor drives and charging– Complete selection for connectivity and sensors– Overall system size and BOM reduction– High complete design support with documentation and demo board

Intelligent powerswitches and modules

Key features

Digital isolators

Features and benefits

Application diagram

Charger solutions
Wireless charging
Qi

Battery management system
Microcontrollers

Main

Identification
AC-DC
charger solutions
Wireless charging

USB-C controllers
and peripherals

USB-C / PD

Sensor systems

Wifi / BLE

Power management
DC-DC conversion

Microcontroller

GatedriverInverter/
MOSFETs

Brushless
DC motorPowermanagement ICs

Communication
Connectivity

Motor control

M

WBG semiconductors

Motion
Speed
Angle
Direction
Magentic
Pressure

Sensor systems

Sensors

Security

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Supportwww.infineon.com/vacuumcleaner
72

Applications

SolutionsCordless vacuum cleaner

Product portfolio

Microcontroller
Sensor systems

36 V

MOSFET

Gate drivers
Microcontroller

OptiMOS™ 6

BSZ018N04LS6, IQE013N04LM6, BSC007N04LS6, BSC010N04LS6, ISG0613N04NM6

OptiMOS™ 5

BSZ013NE2LS5I, BSZ0500NSI, IQE006NE2LM5, BSC010N04LSC, ISC019N04NM5

MOTIX™

6EDL6171, IDM700A, 2ED2742S01G, ED2744S01G, ED2748S01G, ED2732S01G,
ED2734S01G, ED2738S01G

EiceDRIVER™

1ED44173N01B

XMC™ series

XMC1400. XMC1400, XMC4400

PSoC™

PSoC™ 4100, PSoC™ 62

Hall switches

TLV4963

Angle

TLI5012

3D magnetic

TLV493D

Magentic coreless current

TLI4971

OptiMOS™ 5

BSZ099N06LS5, IQE022N06LM5, BSC012N06NS, BSC028N06NS

StrongIRFET™,
StrongIRFET™ 2

IRFH7545, IPD038N06NF2S

MOTIX™

6EDL7141, IDM 700A, 6ED2742 NEW, 2ED2742 NEW, 2ED2732 NEW

EiceDRIVER™

1ED44173N01B

XMC™ series

XMC1400, XMC1400, XMC4400

PSoC™

PSoC™ 4500S

15-300 V MOSFETs

Gate drivers

Part number

500-950 V MOSFETs

12 V, 15 V, MOSFET
18 V, 22 V

Product family

Gate-driver ICs

Motor control

Product category

Digital isolators

Functional block Topology

IPA60R280P7S, IPD60R280P7S, IPD60R360PFD7S

Controller IC-

ICC80QSG, XDPS2201, XDPS2221, ICE3PCS01GHEMTs

CoolGaN™

IGI60F1414A1L IGI60F200A1L, IGLD60R190D1

Gate drivers

EiceDRIVER™

1EDB9275F, 2EDB7259Y, 2EDF9275F, 2EDL05N06PF, 2EDR8259X, 2EDS9265H

Schottky diodes

CoolSiC™ G5 CoolSiC™ G6

IMZA65R020M2H, IMZA65R050M2H, IMW65R020M2H, IMW65R050M2H

SR switch

OptiMOS™ 5

BSC040N10NS5, BSC160N15NS5, IPP200N15N3

Load switch

OptiMOS™ 5

BSC040N10NS5, BSC0902NSI, IPP034N08N5

USB-PD

EZ-PD™ PMG1-B1

CYPM1115-48LQXI, CYPM1116-48LQXI

EZ-PD™ PAG1

PAG1P, PAG1S

EZ-PD™ BCRCYPD3177-24LQXQ, CYPD3177-24LQXQT

Microcontroller

XMC™

XMC1400

Protection MOSFET

OptiMOS™ StrongIRFET™

BSZ009NE2LS5, IQE006NE2LM5, BSC004NE2LS5, IRFH6200

18 V

BSZ0500NSI, IQE008N03LM5, BSC005N03LS5

24 V

BSZ018N04LS6, IQE013N04LM6, BSC007N04LS6

36 V

ISZ034N06LM5, IQE022N06LM5, ISC009N06LM5-

TLE9012Cell balancing MOSFETs

StrongIRFET™

IRLML9303, IRFTS9342, IRLML9301

Microcontrollers

XMC™, PSoC™

XMC1100, XMC1200, XMC1400, XMC1400, XMC4100, CY8C41x4/5/65, CY8C41x6/75,
CY8C4147-S5

Authentication/security

OPTIGA™ Trust-

Bluetooth®

AIROC™

CYBT-213043-02, CYW20736,CYW20706, CYW20704

Wi-Fi

AIROC™

CYW43907, CYW43439, CYW954907

Pressure sensor

XENSIV™ Pressure Sensor

DPS368Sensors

Communication and HMI

Monitoring balancing ICIntelligent powerswitches and modules

CoolMOS™ P7

Microcontrollers

TLI4971

MOSFET

USB-C controllers
and peripherals

TLV493D

Magnetic coreless current

Powermanagement ICs

12 V

TLI5012

3D magnetic

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SupportBMS

TLV4963

Angle

WBG semiconductors

Charging

Hall switches

IGBT discretes andsilicon power diodes

PSoC™ 6
Sensor systems73

Solutions

Cordless power tools andoutdoor power equipment

Key benefits– Comprehensive product and solution portfolio, easy to tailor to any design– Convenient selection of the right fit products thanks to broad portfolio and– Complete solutions– Extended battery lifetime and product life span
– Increased production capability– Overall system size and cost reduction– Security, quality, and safety– Authentication– Short time-to-market

specification– Infineon offers complete solutions for power supplies, chargers, and motor drives– Best in class MOTIX™ and EiceDRIVER™ gate drivers– High reliability of Infineon components– Offering LV FETs with SMD packaging improves the productive capability byautomatic production, improves reliability and reduces assembly cost

– Components featuring small form factor and compact design offering highest
power density and BOM savings thanks to lowest RDS(on)Intelligent powerswitches and modules– Trustworthy hardware-based security– Highest quality standards and a safety-certified development process– Proven track record and outstanding partner network for embedded security– OPTIGA™ Trust enables authentication of components connected to the system

IGBT discretes andsilicon power diodes

Key features

Digital isolators

Features and benefits(e.g., battery pack recognition to avoid second-party batteries etc.)– Evaluation and demonstration boards for fast prototyping– Available simulations, documentation, and system support to reduce develop-

Microcontrollers

ment time and cost

Application block diagram example: cordless power tools
Charger solutions

USB-C controllers
and peripherals

Battery management

USB-C PD
AC-DC charger

Powermanagement ICs

Motor control

Sensor systems
Speed
Magnetic
Direction

Power management
DC-DC conversion
DC-DC

Angle

LDO

MCU

Gate driverstage

Power stage

WBG semiconductors

HMI
LED- Driver for work light
LEDs / indicators

Brushed / BLDC motor
M

Switches / buttons
LCD display / touch screen

Communication and connectivity

500-950 V MOSFETs

Millions of households worldwide rely on power tools to complete daily tasks or creative projects around the home.
Consumers want robust, reliable, and easy-to-use portable power tools with low prices and long battery life as key
selection criteria. High quality standards to earn the trust of the consumer also require diagnostic and safety features.
Infineon’s product portfolio is made to bring performance, safety and reliability to consumer projects. We help ourcustomers meet all consumer needs at a reduce total costs. In addition to the extensive product portfolio, we offer
wireless-charging reference designs. They deliver high performance and are easily optimized in our DAVE™ development
platform. Configure your BOM and exceed expectations with Infineon components in your cordless power tool designs.

Gate-driver ICs

Battery-powered devices for home and professional applications

15-300 V MOSFETs

Applications

Cordless power tools andoutdoor power equipment

Sensorsystems

Sensors

Wi-Fi / BLE
Security identification

Click here to learn more:
www.infineon.com/gatedriver
www.infineon.com/mosfets

www.infineon.com/xmc
www.infineon.com/usbpd

Supportwww.infineon.com/powertools
www.infineon.com/motorcontrol

74

Applications

SolutionsCordless power tools andoutdoor power equipment

Product portfolio
OptiMOS™ 5
OptiMOS™ 6
StrongIRFET™

BSC005N03, IQE006NE2, IPT004N, IPP055N

MOTIX™

IDM700A, 2ED2742S01G, ED2744S01G, ED2748S01G, ED2732S01G,
ED2734S01G, ED2738S01G, 1ED44173, 6EDL7141, 6EDL7151, 6ED2742S01Q,
TLE9140EQW, IFX9201SG

EiceDRIVER™

1ED44173N01B

XMC™ series

XMC1400. XMC1400, XMC4400

PSoC™

PSoC™ 4100, PSoC™ 62

Hall switches

TLV4963

Angle

TLI5012

3D magnetic

TLV493D

Magentic coreless current

TLI4971

MOSFET

OptiMOS™ 5
OptiMOS™ 6
StrongIRFET™

IRL40DM2, BSC010N04, IST011N06, BSZ097N04, IRF40SC, IPB011N04,
IRL40B215, IPT009N08NM6, IPB016N08NF2S

Gate drivers

MOTIX™

6EDL7141, IDM 700A, 6ED2742, 2ED2742, 2ED2732, 1ED44173, 6EDL7141,
6EDL7151, 6ED2742S01Q, TLE9140EQW, IFX9201SG

EiceDRIVER™

1ED44173N01B

XMC™ series

XMC1400, XMC1400, XMC4400

PSoC™

PSoC™ 4500S

Microcontroller
Sensor systems

Microcontroller

IRL40DM2, BSC010N04, IST011N06, BSZ097N04, IRF40SC, IPB011N04, IRL40B215

15-300 V MOSFETs

Gate drivers

36 VPart number

500-950 V MOSFETs

MOSFET

Product family

Gate-driver ICs

12 V, 15 V,
18 V, 22 V

Product category

Digital isolators

Motor control

Topology

48 V, 56 V, 72 V

MOSFET

Hall switches

TLV4963

Angle

TLI5012

3D magnetic

TLV493D

Magnetic coreless current

TLI4971

OptiMOS™ 3
OptiMOS™ 5
OptiMOS™ 6
StrongIRFET™

BSC021N08N, BSC030N08N, IPT010N08N, IPTG011N08N, IPP040N08N,
IPB049N08N, IPT009N08NM6, IPB016N08NF2S

IGBT discretes andsilicon power diodes

PSoC™ 6
Sensor systems

BSC035N10N, ISZ080N10N, IPT015N10N, IPTC030N12N, IPB036N12N, IPP050N10N

Gate drivers

MOTIX™

TLE9140EQW, 1EDN755X, 6ED2742, 2ED2732, 2ED2734, 2ED2748

Microcontroller

XMC™ series

XMC1400, XMC1400, XMC4400

PSoC™

PSoC™ 4500S

Communicationand HMITLI4971

CoolMOS™ P7

IPA60R280P7S, IPD60R080P7, IPD60R280P7S, IPD60R360PFD7S, IPN70R450P7S

Controller IC-

ICC80QSG, XDPS2201, XDPS2221, ICE3PCS01GHEMTs

CoolGaN™

IGI60F1414A1L IGI60F200A1L, IGLD60R190D1

Gate drivers

EiceDRIVER™

1EDB9275F, 2EDB7259Y, 2EDF9275F, 2EDL05N06PF, 2EDR8259X, 2EDS9265H

Schottky diodes

CoolSiC™ G5 CoolSiC™ G6 IMZA65R027M1H, IMZA65R048M1H, IMW65R027M1H, IMW65R048M1H

SR switch

OptiMOS™ 5

BSC040N10NS5, BSC160N15NS5, IPP200N15N3

Load switch

OptiMOS™ 5

BSC040N10NS5, BSC0902NSI, IPP034N08N5

USB-PD

EZ-PD™ PMG1-B1

CYPM1115-48LQXI, CYPM1116-48LQXI

EZ-PD™ PAG1

PAG1P, PAG1S

EZ-PD™ BCRCYPD3177-24LQXQ, CYPD3177-24LQXQT

Microcontroller

XMC™

XMC1400

Protection MOSFET

OptiMOS™
StrongIRFET™

BSC004NE2LS5, IQE006NE2LM5, BSB008NE2LX, BSZ009NE2LS5, IRFH6200,
IRF6200, IRF1324

18 V

IPT004N03L, BSC005N03LS5, BSZ0500NSI, IRF6726M, IRLS3813, IRLB3813,
BSC079N03LSCG

24 V

IRL7472L1, IRL40SC228, BSC007N04LS6, IRL40T209, IRFS7430, IRL40B209,
BSZ018N04LS6

36 V

IPT007N06N, IRF60SC241, BSC014N06NS,IRF7749L1, IRL60B216, IRL60S216

48 V

IPT012N08N5, IPP020N08N5, BSC025N08LS5, BSB044N08NN3G,
BSZ070N08LS5, BSZ096N10LS5,

72 V

IPP041N12N3G, BSC077N12NS3G, BSZ240N12NS3G, IRF135SA204,
IRF135S203, IRF135B203
Monitoring balancing IC -TLE9012Cell balancing MOSFETs StrongIRFET™

IRLML9303, IRFTS9342, IRLML9301

Microcontrollers

XMC1100, XMC1200, XMC1400, XMC1400, XMC4100, CY8C41x4/5/65,
CY8C41x6/75, CY8C4147-S5

XMC™, PSoC™

Authentication/security OPTIGA™ Trust

SLE 95250, SLS 32AIA010MH

Bluetooth®

AIROC™

CYBT-213043-02, CYW20736,CYW20706, CYW20704

Wi-Fi

AIROC™

CYW43907, CYW43439, CYW954907

Pressure sensor

XENSIV™

DPS368USB-C controllers
and peripherals

Magnetic coreless current
MOSFETPower
management ICs

TLV493DWBG semiconductors

12 V

TLI5012

3D magnetic

Sensors

BMS

TLV4963

Angle

Support

Charging

Hall switches

Microcontrollers

PSoC™ 6
Sensor systems

Click here to learn more:
www.infineon.com/powertools
www.infineon.com/motorcontrol

www.infineon.com/gatedriver
www.infineon.com/mosfets

Intelligent powerswitches and modules

Functional block

www.infineon.com/xmc
www.infineon.com/usbpd
75Solutions

Smart TV
SMPS - TV power supply– One-stop-shop for the complete system– Energy saving with switching off the TV when not in the room
– High energy efficiency– Protection against unauthorised connection to the device– Ease of use, allowing responsive touch control

Intelligent powerswitches and modules

Key features– Complete smart TV system solution– Presence detection radar– Powerful SMPS
– IoT security and authentication– HMI and sensor fusion solutions

IGBT discretes andsilicon power diodes

Features and benefits
Key features

Application diagram
Remote control
Panel
Backlight dimming

Microcontrollers

KeypadMicrocontroller

AC-DC SMPS

Silicon microphone(digital assistant)

Security/gesturecontrol (ToF)

Ambient light

Gesture control(radar module)

Wi-Fi 6

USB-C controllers
and peripherals

BLE® transceiver
Tuner control

Touch controllerPowermanagement ICs

DTV SoC

Control

CO2 sensor

Payment/security

Class D audio amplifier

HDMI

USB-C

Ethernet

WBG semiconductors

NFC

Sensors

Presence detection(radar module)

500-950 V MOSFETs
Digital isolators

The requirements for new generations of TVs and smart TVs are increasing with the growing access to massive
amounts of streaming content, the need for superior pictures, and the highest audio quality. Designers face a greatchallenge combining all the required features in smart TV designs while keeping the system compact, secure, andpower efficient. In Infineon‘s wide portfolio of semiconductors, sensors, MCUs, connectivity solutions, and security,
we offer a complete system solution to cover all the needs, and enable a design of highly efficient, compact, easy touse, and powerful systems. Complementary to our wide product portfolio, we offer evaluation boards, enabling aneven faster time to market. For example, our digital PFC-LLC converter evaluation board specifically for TV powersystems, DEMO-IDP2308-120W, contains a 120 W digital PFC-LLC converter with 8 x 5 V AC~265 V AC input and 12 V/24 V
output. It is controlled by Infineon’s 2nd generation XDP™ SMPS digital multi-mode PFC-LLC combo controller IDP2308
and is the perfect solution to reduce the complexity of TV power system design.

Gate-driver ICs

Complete system solution for smarter, slimmer, more powerful,
more energy-efficient smart TVs

15-300 V MOSFETs

Applications

Smart TVIR receiver

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Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs

High-voltage
MOSFETs

Topology

Product family

Active bridge

600 V CoolMOS™ S7

Active bridge
DCM PFC HB LLC

600 V CoolMOS™ P7

Benefits– Body diode robustness at AC line commutation– Improved thermal resistance– Absolute lowest RDS(on) in the market– Enables top-side cooling with D-DPAK and Q-DPAK– Ideal fit for solid-state and hybrid relays and circuit breakers– Fast-switching speed for improved efficiency– Low gate charge for enhanced light-load efficiency and low power

IGBT discretes andsilicon power diodes

Product category

consumption at no-load condition

DCM PFC, HB LLC 600 V CoolMOS™ PFD7

– Optimized VGS threshold for lower turn-off losses– Rugged body diode for HB LLC application– Robustness and reliability with integrated robust, fast body diodeand up to 2 kV ESD protection in gate

– Reduced gate charge for enhanced light-load efficiency, and lower
hysteresis loss

– Best price/performance, integrating fast body diode– Simplified product portfolio– Highest quality and reliability– Better energy efficiency and cost targets with providing good

Microcontrollers

600 V CoolMOS™ 8

enough power density

HB LLC

Control ICs

IDP2308– TSC package offerings and 7 mΩ available– 650 V half-bridge SOI driver with integrated bootstrap diode
EiceDRIVER™ level shift:– High-frequency switching (500 kHz)
2ED2181S06F, 2ED21814S06J
PFC-LLC non-AUX digital IC for TV – Low BOM count/system cost due to high integration– Low standby power
embedded PSU– High system reliability– Shorter development cycles and higher design and production

USB-C controllers
and peripherals

Gate-driver IC

flexibility

Main stage

Boost diodes

DCM PFC

650 V Rapid diodeControl ICs

CCM PFC ICs

ICE3PCS0xG

WBG

PFC

CoolGaN™ 600 V e-mode HEMTs

Gate-driver IC

PFC

1ED44173N01B

Active bridge
DCM PFC HB LLC

600 V CoolMOS™

Powermanagement ICs

OptiMOS™ 5 100-150 V
StrongIRFET™ 2 100 V

WBG semiconductors

High voltage MOSFETs

Synchronousrectification– Low BOM count/system cost due to high integration– Low standby power– Small form factor designs– High system reliability– Low conduction losses, reduced overshoot– FullPAK package available– -Low conduction losses– -High PFC anf low THD– Highest efficiency contribution via less parasitic parameter– Space saving with SMD smaller package– Single-channel with fast, accurate (± 5%), integrated overcurrent
protection (OCP)– Fast switching speed for improved efficiency– Low gate charge for enhanced light load efficiency and low power
consumption at no-load condition

Control ICs

HB LLC ICs

WBG

HB LLC

High-voltage
MOSFETsHB LLC– Optimized VGS threshold for lower turn-off losses– Rugged body diode for HB LLC application– High efficiency and low EMI
ICE1HS01G-1/ICE2HS01G
CoolGaN™ 600 V Integrated Power – Highest efficiency, highest power density– High reliability
Stage– Isolated gate driver integrated– Fast-switching speed for improved efficiency
600 V CoolMOS™ P7– Low gate charge for enhanced light-load efficiency and low power

Sensors

PFC

Low-voltage
MOSFETsPFC-LLC non-AUX digital IC for TV
adapter

SupportSynchronousrectification

IDP2303A

consumption at no-load condition

Auxiliary power supply

Control ICs

QR/FF flyback
CoolSET™

QR CoolSET™ - ICE5QRxx80BG FF
CoolSET™ - ICE5xRxxxxXX

Flyback

Control ICs

QR flyback

ICE2QS03G

High-voltage
MOSFETs

Flyback

700 V CoolMOS™ P7

Intelligent powerswitches and modules

Functional block
Main stage/PFC combo
non-AUX

Digital isolators

Recommended products– Optimized VGS threshold for lower turn-off losses– Rugged body diode for HB LLC application– Low standby power, high efficiency and robustness– Forced resonant ZVS control reduces the switching loss
– Multilevel protection enables the robust design– Flexible firmware provides more differentiation for OEMs
– Optimized for flyback topologies– Best price competitive CoolMOS™ SJ MOSFET family– Lower switching losses versus standard MOSFET– Controlled dV/dt and di/dt for better EMI

Click here to learn more:
www.infineon.com/smart-tv
77

Applications

Solutions

Smart TV

Product portolio

Presence detection

SensorBenefits– Infineon‘s XENSIV™ 24GHz radar transceiver family offers

XENSIV™ 60GHz radar sensors for IoT– Low-power motion sensing and distance measurements– >100 m detection range– Detection of submilimeter movements– Up to 10 m detection range– Arm® Cortex®-M4 with floating point unit (FPU), single-cycle

32-bit XMC4000 industrial microcontroller
ARM® Cortex®-M4

multiple variants

DSP MAC, 80-144 MHz CPU frequency

32-bit XMC1000 industrial microcontroller
ARM® Cortex®-M0– Arm® Cortex®-M0 core, up to 48 MHz and 80 CoreMark

XENSIV™ 24GHz radar sensors for IoT– Multiple variants in the family– Low-power radar chip options– Detection of people up to 15 m
– Accurate measurments down to distances of ~1cm and higher

XENSIV™ 60GHz radar sensors for IoT

15-300 V MOSFETs

Microcontroller

Product family
XENSIV™ 24GHz radar sensors for IoT

500-950 V MOSFETs

Product
Sensordoppler velocity

Microcontroller

32-bit XMC4000 industrial microcontroller
ARM® Cortex®-M4– 4-channel high-resolution, PWM (150 ps) (XMC4400, XMC4200,

32-bit XMC1000 industrial microcontroller
ARM® Cortex®-M0– The MATH co-processor boosts standard Cortex®-M0 com-XENSIV™ PAS CO2 sensor– Space savings in customers’ end products– High-quality data and compliance with smart building

XMC4100)– Up to 6 multi-functional serial interface modules configurable
to SPI, I2C, I2S, UART

CO2 sensor

Digital isolators

CO2 sensor

puting performance enabling divisions and trigonometric
operations like SIN and COS

Gate-driver ICs

Functional block
Gesture control

standards– Cost-effective high-volume assembly and easy system

EZ-PD™

– Advanced compensation and self-calibration algorithms– Reversible connector, measuring only 2.4 mm in height– Compliant with USB Power Delivery 2.0, providing up to 100 W– Double the bandwidth of USB 3.0, increasing to 10 Gbps withppm ±3% of reading)SuperSpeed+ USB 3.1– Combines multiple protocols in a single cable, including
DisplayPort, PCIe or Thunderbolt

Silicon microphone

MEMS microphone

IM69D127– Very-low self-noise / very-high SNR (69 dB)– Selectable power modes for battery critical applications– Sealed Dual Membrane (SDM) technology with IP57 ingress

IM72D128– Ultra-high dynamic range and high acoustic overload point

Microcontrollers

protection at microphone level(AOP) of 128dBSPL– Very tight part-to-part phase and sensitivity matching (± 1dB)
– Flat frequency response with a very low LFRO (low frequency
roll-off) of 20 Hz– Crystal clear audio pick up of the quietest and the loudest

USB-C controllers
and peripherals

IM73A135

sounds– High ingress protection (IP57) at a microphone level– Enablement of advanced audio features (ANC, transparent
hearing, audio zoom, beamforming)

Wi-Fi 6

Security

AIROC™ Wi-Fi + Bluetooth®
combosCYW4373– Dual-Band ePA/eLNA reference design available for increased

Security and smart card
solutions

OPTIGA™ TPM - Trusted Platform Module– Dedicated Bluetooth® path for best Coex performance– Complies with Bluetooth® core specification version 5.4– High-end security controller with advanced cryptographic

OPTIGA™ Trust
OPTIGA™ Authenticate

range

algorithms implemented in hardware (e.g., RSA & ECC256,
SHA-256)– Common Criteria (EAL4+) and FIPS security certification– Flexible integration thanks to SPI, I2C or LPC interface support– Extended temperature range (-40 to +85°C) for a variety of
applications– Full range of security chips– Strong turnkey solutions combining robust hardware security
and genuine user experience– Suited to all anti-counterfeit challenges– Combination of robust authentication with unprecedented

Powermanagement ICs

USB-C power delivery
controller

WBG semiconductors

USB-CIntelligent powerswitches and modules

PASCO2V01

IGBT discretes andsilicon power diodes

integration– Plug & play for fast design-to-market– Exceptionally small form factor– Highest accuracy and robust performance at ppm level (±30levels of configuration flexibility– Contactless communication technology based on 13.56 MHz

Sensors

OPTIGA™ Authenticate NFC solutions

RF field– Standalone plain tags and secured NFC tags for stickers– Embedded NFC-I2C bridge tags for IoT devices– Multiple user memory options for NDEF data storage– On-chip high capacitance to enable small antenna designs
Wireless connectivity

AIROC™ CYW20835 Bluetooth® LE system on
Chip

Supportand improved RF performance

Bluetooth® LEtransceiver– High levels of integration to minimize external components– Supports the entire spectrum of Bluetooth® Low Energy use
cases– Fully integrated modules with onboard crystal oscillator, passive components, flash memory, and the CYW20835 systemon chip– Globally certified to support fast time-to-market
Touch controller

Microcontroller

32-bit PSoC™ 4 Arm® Cortex®-M0/M0+– Industry-leading capacitive-sensing solution for touch buttons

32-bit PSoC™ 6 Arm® Cortex®-M4 / M0+– State-of-the-art noise immunity and water rejection– Ultra-low-power architecture– Highest level of protection defined by the Platform Security

and sliders

Architecture (PSA) from Arm– Enabling modern touch and gesture-based interfaces that arerobust and reliable

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www.infineon.com/smart-tv
78

Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators

OLED LLC
stage

On/off control

Intelligent powerswitches and modules

OLED LLC
controller IC

IGBT discretes andsilicon power diodes

OLED TV power block diagram

Supply for OLED display

PFC not active instandby mode

VBUS
Rectifier
+ PFC
stage

Supply for standby mode
VCC

Main LLC
stage

OLED
module andTV system

Microcontrollers

AC

Vin

Supply for system
Supply for system

USB-C controllers
and peripherals

Power on control
startup

Status information

Powermanagement ICs

Main LLC/PFC
combo-controller IC

Sensors

WBG semiconductors

OLED TVs improve user experience as they can be thinner, lighter, more flexible and consume less power than LCD/LED TVs.

Click here to learn more:
Supportwww.infineon.com/smart-tv
79

Solutions

Smart speaker

Applications

Smart speaker

15-300 V MOSFETs

Speakers for an intuitive and outstanding user experience

500-950 V MOSFETs

Once a novelty in households, smart speakers are more and more becoming increasingly commonplace. Risinguser expectations accompany this rapid adoption. However, frustration with devices that do not understand or hearcommands leads to lower user adoption. Consequently, growth rates for smart speakers are failing to reach their fullpotential. Components such as MEMS microphones, touch controllers, and new technologies such as radar are vital in
improving the user experience in the smart speaker segment.

Gate-driver ICs

Infineon has long-standing expertise in sensors, connectivity, and power solutions that fulfill the consumer market
requirements in terms of outstanding performance, reliability, and energy efficiency.

Key benefits– High sensitivity, low self-noise (high SNR) and distortion, wide dynamic range,– Improved audio input and thus voice command recognition, especially in– Multilevel switching technology at fully rated power in a wide range of– Best-in-class audio quality and lowest power consumption enable the class D– Ultralow-power AIROC™ Wi-Fi and Bluetooth® combo in a single-chip solution– Connectivity for high interoperability and performance without dropouts– Reliable, elegant, and durable CAPSENSE™ touch controller with advanced– Noise immunity, water resistance, and sleek, futuristic user interfaces and– XENSIV™ 60 GHz radar sensor brings innovative, intuitive sensing capabilities– Precise presence detection for more contextual awareness to ease interaction,– Highly efficient and power-dense SMPS solutions– Highly integrated EZ-PD™ USB-C controller supports all USB-PD profiles– Highly efficient charger in a small form factor– USB-IF certified with market-proven USB-PD stack, ensuring specification

enables small-form-factor IoT designs

capacitive touch sensors– IoT security controller OPTIGA™ Trust M maintains the unique identity andintegrity of the speakeraudio amplifier to be used in filterless configurations

IGBT discretes andsilicon power diodes

MERUS™ class D amplifiers

extended use cases such as whispering or longer distances to the speaker for abetter user experience

anywhere in the home, extended battery playback time, or the reduction ofbattery size without compromising on battery playback time to save costgesture recognition

sub-millimeter motion tracking to capture movement at high speed accurately,
vital sensing for monitoring health status such as respiratory and heart ratecompliance and interoperability, requiring no firmware development– Easy and secure cloud provisioning services

Microcontrollers

and high acoustic overload point with XENSIV™ MEMS microphones

Application diagram
NAND flash

MEMS microphone

USB-C controllers
and peripherals

DDR SDRAM

Audio amplifier

PSoC™ 4000

PSoC™ 4100S MAX

Power
AC-DC
power supplies

USB-C:
EZ-PD BCR

Battery protection
unit (BPU)

USB-C:
PMG1

Wireless charging

ESD

WBG semiconductors

Security

Application processor
DSP

Power
management ICs

Capacitive touch controller

Radar ICWi-Fi +
BluetoothIntelligent powerswitches and modules

Key features

Digital isolators

Features and benefits

Sensors

LED driver

Click here to learn more:
www.infineon.com/radar-sensors-iot
www.infineon.com/optiga-trustm-express

Supportwww.infineon.com/smart-speaker www.infineon.com/psoc-4000t
www.infineon.com/mems
www.infineon.com/merus

80Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs

Benefits

XENSIV™ MEMS
microphones– High-performance microphone with low self-noise (high SNR) and low

Audio output

Class D amplifier

MERUS™ class D audio
amplifiers
MA2304DNS– Cooler, smaller, and lighter amplifiers designed to maximize power

Connectivity

Wi-Fi + Bluetooth® combos

AIROC® Wi-Fi +Bluetooth® combos– Best-in-class interoperability to the widest deployed wireless IP– Whole Home Range with high throughput for multi-channel audio andRadar sensor

XENSIV™ 60 GHz
radar sensor

CO₂ sensor

IoT security controller

OPTIGA™ Trust M

USB-C PD controller

EZ-PD™ USB-C
controller

made CAPSENSE™ the industry leader– Advanced inductive touch sensors make possible sleek, futuristic userinterfaces with metallic overlay– Accurate presence detection and vibration detection based on ability to
track sub-millimeter motion at high speed and accuracy– Both stand-alone chip as well as system solution available– Superior accuracy, providing a direct readout of the real CO₂ level, notsimply a correlation– Size and cost advantages– Easy and secure provisioning services with OPTIGA™ Trust M for maintaining speaker's unique identity and integrity– Unify different products under unified PKI architecture– USB-IF certified with market-proven USB-PD stack, ensuring speccompliance and interoperability– Supports all USB-PD profiles commonly used in USB-C power adaptersand requires no firmware development

Wireless charging

15 W inductive wirelesspower transmitter

High-voltage
MOSFETs

FlybackACF, FMCI600 V CoolMOS™ PFD7SMPS Flyback
converter Control ICs

QR flyback ICs

ICE5QSAG

FFR flyback IC

XDPS21071

SMPS
synchronous rectification

Low-voltage MOSFETs OptiMOS™ PD

SMPS load switch

Low voltage MOSFETs OptiMOS™ 30 V

Control ICs

700 V CoolMOS™ P7(standard grade)

IR1161LTRPBF

USB-C controllers
and peripherals

ESD111, ESD245

performance, smart, and secure charging solutions supported byInfineon's unique wireless power controllers– Best price-competitive CoolMOS™ SJ MOSFET family– Lower switching losses than a standard MOSFET– Lower Qrr, lower hysteresis loss, low RDS(on)– High efficiency and low standby power– High power density and ideal for USB-PD– Low conduction losses and reduced overshoot– Logic level switching / S308 / PQFN 3.3x3.3 packages available– High efficiency– Simple external circuitry– Low conduction losses– S308 / PQFN 3.3x3.3 packages available

Powermanagement ICs

ESD protection– A highly-integrated solution that minimizes incremental BOM costs– Outstanding low capacitance devices for best signal integrity– High protection performance by ultralow clamping voltage– Powerful and cost-effective wireless charging solutions for high

WBG semiconductors

Power

XENSIV™
PAS CO2 sensor

RSDB (Real Simultaneous Dual Band) for speaker sub-networks– Ultralow-power technology designed with battery operation in mind
– State-of-the-art noise immunity (SNR > 100:1) and water rejection haveSensors

Security

CAPSENSE™
capacitive touchsensing controller

IGBT discretes andsilicon power diodes

Capacitive sensing touch controller

efficiency and dynamic range while providing best-in-class audio
performance in the product form factors for great-sounding audio
products– Extended battery playback time or the reduction of battery size withoutcompromising on battery playback time to save cost

Click here to learn more:
www.infineon.com/smart-speaker www.infineon.com/psoc-4000t
www.infineon.com/mems
www.infineon.com/merus

www.infineon.com/radar-sensors-iot
www.infineon.com/optiga-trustm-express

SupportSensing

distortions, setting a the new performance benchmark for a superioruser experience

Digital isolators

Product

Microphones

Intelligent powerswitches and modules

Product family

Audio input

Microcontrollers

Functional block

Gate-driver ICs

Recommended products

81Solutions

Smartwatches, feature watches,
wristbands, and smart rings

All in one marketplace for wearable devices with Infineon’s excellent
computing, connectivity, security, sensing, RF, and memory solutions

Gate-driver ICs

With its broad product portfolio, Infineon enables enhanced intelligent devices that are both “always-on” with low power
consumption and high performance.

500-950 V MOSFETs

15-300 V MOSFETs

Applications

Smartwatches, feature watches,
wristbands, and smart rings

Digital isolators

We help manufacturers overcome design challenges across all wearable device categories:‒ Powerful computing, advanced graphics, responsive Machine Learning accelerated with neural net compute, audio
and sound processing‒ Ultra low power wireless connectivity (Wi-Fi, Bluetooth®, and Bluetooth® Low Energy), with a reliable and robust RF
connection

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes‒ Need for strong, yet easy to implement, device and data security to protect personal and sensitive information‒ Highly sensitive microphones for powerful audio and acoustic event detection‒ Accurate sensing for surrounding awareness, precise detection and recognition‒ Longer battery life and small form factor for elegant, unobtrusive designs

Microcontrollers

A smartwatch runs an operating system enabling third party apps (e.g., Wear OS).
Its Arm® Cortex®-A application processor is based on multi-wireless connectivity,
such as Bluetooth®, Wi-Fi, cellular, and UWB. The smartwatch monitors user healthwith advanced sensing technology. Its battery life is limited, usually 1-2 days.

USB-C controllers
and peripherals

A feature watch, including a sports watch, is RTOS-based with limited customized
third-party apps. It is powered by an Arm® Cortex®-M processor with low power
consumption. The battery life is usually 1 or 2 weeks. More and more feature watches
provide a two-way connection via Bluetooth®. Fitness, health tracking, payments,
communication, and other main use cases are covered.

WBG semiconductors

Powermanagement ICs

A wristband or fitness band might not offer a broad spectrum of functionalities,
but it is a useful tool for tracking and monitoring fitness activities. It covers
several use cases, including step counting, sleep monitoring, location tracking,and access control.

Sensors

A smart ring is a jewelry-like tracker of personal vitals, payments, voice, or other digital
activities. It is an alternative to a watch or wristband for monitoring fitness.

Click here to learn more:
Supportwww.infineon.com/wearables
82

Applications

Solutions

Smartwatches, feature watches,
wristbands, and smart rings

Block diagram for smartwatch, feature watch, wristband and smart ring

GPS
LNA

RAM

GPS IC

15-300 V MOSFETs

MemoryConnectivity

Flash

Wi-Fi IC

Bluetooth/BLE
IC

RF front-end

USB charging

Wireless charging

Powermanagement

ESD
protection

500-950 V MOSFETs

Antennatuner

Power stage

RF switch

Cellular modem
Host processor

Gate-driver ICs

ESD
protection

Security
Battery
management

Authentication

Display driver

NFC security
solution

Display

HMICAPSENSE™
touch

UWB

Voice userinterface

3D-button

IGBT discretes andsilicon power diodes

RF switch

Amplifier

Digital isolators

eSIM

Barometricpressure sensor

Microphone

Motion sensors

Environmental
sensorBiometric
sensorMicrocontrollers

Heart rate &vital sign sensor

Intelligent powerswitches and modules

SensingFunctional block

Recommended products and solutions

Host processor– PSoC™ Edge 84 with Arm® Cortex®-M55and Ethos U55 NPU for Security– OPTIGA™ Connect Consumer eSIM solution (e.g., OC1120)– SECORA™ Connect X payment (NFC booster)Connectivity– AIROC™ Wi-Fi & Bluetooth® Combos (CYW43022, CYW55512)– AIROC™ dual mode Bluetooth® (CYW20721)– GPS LNA (e.g. BGA123L4, BGA524N6)– 4G / 5G LTE LNAs (e.g., BGA5x1BN6 family)– Antenna tuners (e.g., BGSA12UGL8, BGSA14GN10)– RF switches (e.g., BGS12WN6, BGS14WMA9)– SEMPER™ Nano NOR flash

Human-machineinterface– PSoC™ 4000T with CAPSENSE™ technology for touchSensing– XENSIV™ pressure sensor (e.g., DPS368)– XENSIV™ MEMS microphones (e.g., IM69D120/D130/D128S)Power stage– USB type-C controller (e.g., EZ-PD™ CCG2)– ESD protection (e.g., ESD119-B1, ESD131-B1, ESD307-U1)

Sensors

Click here to learn more:
www.infineon.com/wearables

SupportMemoryWBG semiconductors

Connectivity RF

machine learning– PSoC™ 6 ARM® Cortex®-M4 and -M0+microcontroller with BLE

USB-C controllers
and peripherals

Product familyPowermanagement ICs

Functional block83

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

15-300 V MOSFETs

Applications

Solutions

Wrist-worn devices

Key benefits– High performance MCU with machine learning– Mature dual mode Bluetooth®
– Ultra low power Wi-Fi combo– Options for hardware integration– Total solution provider– Synchronized multi-modal HMI, situation awareness– Audio/voice/music function support with high reliability– Bulk data transmission with low power, co-existence solution– Flexible integration option to customer due to wide portfolio– One-stop-shop supplier (MCU, connectivity, sensor, payment, etc.)

Intelligent powerswitches and modules

Key features

IGBT discretes andsilicon power diodes

Features and benefits

2.5D graphic
capability todrive fancy
displayHigh reliability
and data
throughput
with Wi-Fi
connectivity

Integrated lowest
power compute,
BLE connectivity,and most robust
capacitive touch

Low power
consumption toincrease battery
lifetime

Easy, convenient,and secure
payment by NFC

Bluetooth® audio
streaming with
BT/BLE SoC and
Wi-Fi combo

Secure cellular
network
connectionBest
performance forvoice call andvoice assistantwith MEMS
microphones

Highest accuracy
and fast signal
pick-up for
location tracking
and altitude
measurement

Reliable andlow-power codeand data storage
in a tiny footprint

Products withsmallest form
factors enablehigh functional
integration

Sensors

WBG semiconductors

Powermanagement ICs

Strong computing
capability withmachine learning inedge for autonomous
operation andsituation awareness

USB-C controllers
and peripherals

Microcontrollers

Infineon, the right partner to solve your design challenges

Click here to learn more:
Supportwww.infineon.com/wearables
84

Make your wire-free camera smarter
Advancements in video surveillance technology take indoor and outdoor security solutions to the next level. Smartcameras connected to management systems and cloud platforms can detect intruders more easily and alert users
when they sense danger. By equipping cameras and doorbells with reliable connectivity and accurate sensor solutions,security-enhancing IoT features can be implemented, significantly improving the detection of intrusions and otherunusual behavior.

Gate-driver ICs

Camera hardware improvement enables differentiated features to move from the cloud to the edge. Cameras
become an active component in smart homes, not just passive observers. Wireless cameras and doorbells
often demand low power with high integration features.

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

Infineon offers a broad range of products to make security cameras and video doorbells smart and connected.
The ultra-low power, high-performance AIROC™ wireless connectivity solution portfolio for matter-enabled Wi-Fi
and Bluetooth® solutions offer reliable, secure connections to cloud and management systems at all times, while
linking cameras and doorbells to the whole smart home. Sensors such as Infineon’s XENSIV™ radar sensors can help
overcome bandwidth limitations, for example, by the waking-up function and reducing false positives when motion
near the camera is detected. The XENSIV™ MEMS Microphone enables sound or voice and notification. At the sametime, Infineon’s embedded security solutions make connected cameras more robust against cyberattacks. Infineon’s
best-in-class low-power MCU and wireless support for cameras and doorbells often are battery-operated and rely on apersistent connection to the cloud with low-latency wakeup capability.

USB-C controllers
and peripherals– Improvement in coverage, deploy density, latency, throughput, etc.
– Longer battery life
– Offloading host burden for power saving; BOM reduction– Interoperability between devices in smart home
– Accurate data collection for new use cases, e.g. wake-up functions with radar sensor– Ensuring device integrity and robust design against cyber attacks

Sensors

WBG semiconductors

Powermanagement ICs

Key benefits– Reliable and robust connectivity with Wi-Fi6/E– Low-power Wi-Fi and MCU– Connectivity processor in wireless solution– Infineon leading solution of Matter– Highly accurate set of sensors with low power consumption– Turnkey embedded security solutions

Microcontrollers

Features and benefits
Key features

500-950 V MOSFETs

Security camera and video doorbell

15-300 V MOSFETs

Applications

Solutions

Security camera andvideo doorbell

Click here to learn more:
Supportwww.infineon.com/doorbell-camera
85

IR-CUT
Storage

MemorySecurity

GPIO

MIPI-C

GPIO
SPI

GPIO

SDIO

Battery

PIR sensor

Host ISP SoC

MCU

GPIO

SDIO
UART

IR-CUT

LED

Storage

SPI

I2S

Memory

GPIO

MCU

GPIO

Security

SDIO

Wi-Fi MCU

Host ISP SoC
QSPICloud services
Video archive

ePA

SPI

Security

MCU– PSoC™ 4 Arm® Cortex®-M0/M0+– PSoC™ 6 Arm® Cortex®-M4 / M0+

Amplifier

Audio speaker

Memory– SEMPER™ Nano flash

USB-C controllers
and peripherals

OPTIGA™ Trust M
OPTIGA™ TPM– SLB 9670 TPM 2.0

Mobileapp

Stereomicrophones

Audio speaker

Sensing
MEMS Microphone
Radar IC– IM69D128S (low power) – BGT60LTR11AIP (60 GHz)
– IM72D128 (high SNR)– BGT60UTR11AIP (60 GHz)
– IM68A130 (low power) – BGT60TR13C (60 GHz)
– IM73A135 (high SNR/AOP)

LED

Matter over Wi-Fi

I2S

AmplifierKeypadbuttons

GPIO

PDM

Mobileapp

Stereomicrophones

SPI

MIPI-CHSUART

ePA
PDM

Radar

SPI

Cloud services
Video archive

Wi-Fi combo

QSPI

Image sensor

Keypadbuttons

Power supply

IGBT discretes andsilicon power diodes

Image sensor

Power supply

Intelligent powerswitches and modules

Battery

Next generation block diagram – battery powered

Microcontrollers

Current generation block diagram – battery powered

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

15-300 V MOSFETs

Applications

Solutions

SurveillanceBest

Wi-Fi 6/6E

CYW4373– 1x1 11 ac dual-band, USB and SDIO
– TCP/IP keep alive– WPA3– Antenna diversity– External PA for long range

WBG semiconductors

CYW5459x for high performanceCYW5557x for High performance– RSDB, MU-MIMO, 2x2 11 ac– 2x2 11 ax, tri-band capable– 80 MHz channel, up to 867Mbps – Integrated high-power front end– PCIe3.0 and SDIO 2.0 Wi-Fi– Highest throughput -1.2 Gbps max.
– BT/BLE 5.1– Advanced Coexistence– 2- and 3-antenna configurations – Novel long-range extension modes fordevicesCYW43012 for low power
CYW43022 for ultra-low power– Ultra-low-power, 28 nm– 43012 pin-compatible “drop-in” CYW55x13 for ULP and offloading– 802.11a/b/g/n-compliant, dual-band– 1x1 11 ax, Tri-band, 20 MHz for IoT
replacement with no RBOM
– TCP/IP keep a live
– Ultra low power, extended battery lifechange– High volume production, field-proven – New Deep Sleep mode enabling – WiFi MCU with connectivity processor
in battery cameras
improved DTIM power states
for system-level power saving and BOM– No capacity constraints– ROM update frees up run-tireduction– Improved transmit power and sensitivity
me RAM space for features andfor long range
patchesSensorsCYW43439– Single band, 1x1 11 n, iPA. SDIO
– Low power– BT/BLE 5.0 UART
– TCP/IP keep alive– WPA3– Antenna diversity– Cost-effective connectivity

BetterPowermanagement ICs

Wi-Fi
Good

Click here to learn more:
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86

The last few years have changed how we interact with our colleagues in the workspace. With the rise of remote workand flexible office spaces new challenges arise – new soft skills, but more importantly, new technology is needed tomeet the hybrid way of working. In this changing environment, conferencing systems and speakerphones are essential
to enhance the productivity of remote teams and serve customers effectively. The user experience and functionality
are further enhanced by smart features, including voice assistants for businesses, user tracking, and new connectivity
technologies. Infineon’s portfolio provides exceptional performance, user experience, and energy efficiency for the
next generation of conferencing systems and speakerphones.

Key features

Key benefits– Best-in-class figures of merit– Reliable connectivity and power solutions– Co-processor in connectivity solutions– Small footprints of components– Turnkey embedded security solutions– Highly accurate set of sensors with low power consumption– Lower system power consumption and energy savings and enablement of

Digital isolators

Features and benefits
deep sleep modes– Less failure and increased up-time with stable connectivity of surveillancecamera to cloud and management platforms

IGBT discretes andsilicon power diodes– Keep-alive feature in connectivity solutions– Sleeker designs and space savings– More robust designs against cyberattacks in connected eco-systems– Accurate data collection for IoT use cases, e.g., wake-up functions with radar sensors

NAND FlashLED driver

Microcontrollers

Audio amplifier
Class D

Sensors

Ultrasonic
MEMS

Radar IC
(60 GHz)

Connectivity
Bluetooth®
+ BLE

Power

Application processor DSP

USB-C PD BCR

USB-C PD
PMG 1

ESD protection

BMS

Power over Ethernet

Wireless charging

USB-C controllers
and peripherals

MEMS
microphonePowermanagement ICs

CO2 Sensor

Wi-Fi+ Bluetooth®

Intelligent powerswitches and modules

Application diagram
DDR SDRAM

SMPS

Peripheral controller
EZ-USB™ FX3

HMI & sensor fusion

WBG semiconductors

EZ-USB™ FX2

PSoC™ 4000

IoT security
PSoC™ 4100

Sensors

OPTIGA™ Trust M

500-950 V MOSFETs

Design conference phones and video conferencing systems
for exceptional performance and user experience

Gate-driver ICs

Smart conferencing systems

Conference
system15-300 V MOSFETs

Applications

Solutions

Smart conferencing systems

Click here to learn more:
www.infineon.com/mems
www.infineon.com/psoc-4000t

www.infineon.com/merus
www.infineon.com/wi-fi-6-6e

Supportwww.infineon.com/smart-conference-systems
www.infineon.com/optiga-trustm-express

87Applications

Solutions

Smart conferencing systems

Product portfolio
Product

Benefits

Class D amplifier

MERUS™ class D audio amplifiers – Cooler, smaller, and lighter amplifiers designed tomaximize power efficiency and dynamic range whileproviding best-in-class audio performance in product form
factors for great-sounding audio products– Extended battery playback time or the reduction of battery
size

Connectivity

Bluetooth® modules and
Wi-Fi + Bluetooth® combos– Best-in-class interoperability to the widest deployed
AIROC™ Wi-Fi + Bluetooth®
wireless IP
combos and Bluetooth® modules– Whole Home Range with high throughput for multichannel audio and RSDB (Real Simultaneous Dual Band)for speaker sub-networks– Ultra-low-power technology designed with battery
operation in mind

Sensing

Capacitive sensing touch controller

CAPSENSE™ capacitive touchsensing controller– State-of-the-art noise immunity (SNR > 100:1) and water

Radar sensor

XENSIV™ 60 GHz
radar sensor– Accurate presence detection and vibration detection based

CO2 sensor

XENSIV™ PAS CO2 sensor– Along with size and cost advantages, the sensor delivers

Security

IoT security controller

OPTIGA™ Trust M– Easy and secure provisioning services with OPTIGA™

Data
communication

USB peripheral controllers

EZ-USB™ FX SuperSpeed
controllers– Most versatile USB peripheral controller which can add a

Power

USB-C PD controller

EZ-PD™ USB-C controller– USB-IF certified with market-proven USB PD stack,Gate-driver ICs

rejection have made CAPSENSE™ the industry leader– Advanced inductive touch sensors make possible sleek,
futuristic user interfaces with metallic overlay

on the ability to track sub-millimeter motion at high speed
and accuracy, both stand-alone chip as well as systemsolution available
superior accuracy, providing a direct readout of the real
CO2 level

IGBT discretes andsilicon power diodes

Trust M for maintaining the speaker's unique identity andintegrity– Unify different products under unified PKI architecture
USB 5 Gbps connectivity to any system

Intelligent powerswitches and modules

ensuring spec compliance and interoperability– Supports all USB PD profiles commonly used in USB-C
power adapters– A highly-integrated solution that minimizes incremental
BOM costs

ESD111, ESD245

Wireless charging

SMPS flyback converter
control ICs
SMPS synchronousrectification

700 V CoolMOS™ P7 (standard
grade)

ACF, FMCI600 V CoolMOS™ PFD7

QR flyback ICs

ICE5QSAG

FFR flyback IC

XDPS21071

Low-voltage MOSFETs

OptiMOS™ PD

Control ICs

IR1161LTRPBF

Low-voltage MOSFETs

OptiMOS™ 30 V

high performance, smart and secure charging solutions
supported by Infineon's unique wireless power controllers– Best price-competitive CoolMOS™ SJ MOSFET family– Lower switching losses than a standard MOSFET– Lower Qrr, lower hysteresis loss, low RDS(on)– High efficiency and low standby power– High power density and ideal for USB-PD– Low conduction losses and reduced overshoot– Logic-level switching/S308/PQFN 3.3 x 3.3 packages
available– High efficiency/simple external circuitry– Low conduction losses– S308/PQFN 3.3 x 3.3 packages available

Sensors

WBG semiconductors

SMPS load switch

Flyback

integrity– High protection performance by ultra low clamping voltage– Powerful and cost-effective wireless charging solutions forPowermanagement ICs

High-voltage MOSFETs

15 W inductive wireless powertransmitter– Outstanding low capacitance devices for best signal

USB-C controllers
and peripherals

ESD protection

500-950 V MOSFETs

Audio output

SNR) and low distortions, setting a new performancebenchmark for a superior user experience

15-300 V MOSFETs– High-performance microphone with low self-noise (highXENSIV™ MEMS microphones

Digital isolators

Product family
Microphones

Microcontrollers

Functional block
Audio input

Click here to learn more:
www.infineon.com/mems
www.infineon.com/psoc-4000t

www.infineon.com/merus
www.infineon.com/wi-fi-6-6e

Supportwww.infineon.com/smart-conference-systems
www.infineon.com/optiga-trustm-express

88Solutions

LED lighting

Gate-driver ICs

Infineon supplies tailored products for LED drivers, LED strips, horticultural, and smart lighting. Our broad portfolioof LED lighting comprises LED driver ICs, MOSFETs, and microcontrollers suited for LED drivers as well as sensors
and dedicated ICs for secure communication. In addition to offering products of proven quality, a competent global
lighting team supports our lighting customers in designing LED lighting products and systems in collaboration with ourchannel partners.

LED drivers

USB-C controllers
and peripherals

Combo IC
LED module
Main stage

Powermanagement ICs

PFC stage

Sensorshub

Dimmer
0–10 Vdimming interface

WBG semiconductors

Hardware-based
security

Wired/wirelesscommunication

Sensors

NFC– MCU – communication

Intelligent powerswitches and modules

microcontroller– Our XDPL lighting IC family allows, besides output current, also adjustment of other features like protection,
dimming curves, etc.
‒ Cost reduction combined with efficiency increase– Integration of resonance inductor for PFC + resonant topology enables highest efficiency at low cost
– Integration is enabled by the coreless transformer technology that enables high switching frequencies‒ Higher performance in efficiency and power density– Infineon GaN solutions enable innovative system designs that meet the highest standards and deliver outstanding
performance

Microcontrollers‒ Configuration of output current and some further parameters– Our NFC controller allows the configuration of the output current without the need for an additional

IGBT discretes andsilicon power diodes

Digital isolators

Key trends and challenges in LED lighting and our offering:‒ Human-centric lighting (HCL)– The lowest cost implementation of tunable white with single-stage flyback
constant voltage and smart linear regulators with advanced headroom control
ensuring high efficiency

AC line input

500-950 V MOSFETs

Solutions for cost-sensitive applications as well as for smart lighting

15-300 V MOSFETs

Applications

LED lighting

Click here to learn more:
Supportwww.infineon.com/lighting89Solutions
Applications
15-300 V MOSFETs

Voltage class

CoolMOS™ P7
CoolMOS™ 8600 V/700 V/800 V/950 V 1)
600 V

Main stage

PFC + LCC (constant current) PFC + LLC(constant current)

ICL5102 2)

CoolMOS™ P7 (up to 600 mΩ)
CoolMOS™ PFD7
CoolMOS™ 8600 V/600 V

CoolMOS™ CE(above 600 mΩ)
CoolMOS™ 8600 V

ICL5102HV 2)

CoolMOS™ PFD7
CoolMOS™ 8

950 V
600 V

PFC + flyback (dual-stage)

XDPL8221 3)

CoolMOS™ P7
CoolMOS™ 8

800 V/950 V
600 V

PFC/flyback (single-stage constant current)

XDPL8105

CoolMOS™ P7
CoolMOS™ 8

800 V/950 V
600 V

PFC/flyback (single-stage constant voltage)

XDPL8219

CoolMOS™ P7
CoolMOS™ 8

800 V/950 V
600 V

PFC/flyback (single-stage constant voltage)

ICL8800/ICL8810/
ICL8820

CoolMOS™ P7
CoolMOS™ 8

800 V/950 V
600 V

PFC, flyback low-side gate driver

1EDN7550B

any CoolMOS™ SJ MOSFETs-

2EDN8524F

any CoolMOS™ SJ MOSFETs-

2ED2101S06F

any CoolMOS™ SJ MOSFETs

650 V (SOI)

1EDI20N12AF

any CoolMOS™ SJ MOSFETs

1200 V (coreless transformer/CT)

Buck/linear solutions

Dimming

600 V

2EDF7275F

any CoolMOS™ SJ MOSFETs

650 V (coreless transformer/CT)

GaN Transistors

CoolGaN™

-

600 V - 700 V

Secondary buck (single-channel)
Secondary buck (multichannel)

ILD8150

integrated

80 V

High-side buck gate driver

1EDB8275F

any CoolMOS™ SJ MOSFETs

650 V

Low-side buck gate driver

1EDN8511B

any CoolMOS™ SJ MOSFETs-

Secondary linear controller with feedback

BCR601

small-signal MOSFETs

75 V/100 V

Tunable white with linear LED driver

BCR601, BCR602

small-signal MOSFETs

75 V/100 V

0-10 V dimming interface IC

CDM10V--

CDM10VD--NFC

NFC configuration IC

NLM0010/NLM0011 4)--

Microcontroller

XMC™ microcontroller

XMC1100, XMC1200,
XMC1300, XMC1400--

PSOC Microcontroller

PSoC™ C3--IGBT discretes andsilicon power diodes

Digital isolators

600 VIntelligent powerswitches and modules

Half-bridge LLC gate driver

Gate-driver ICs

MOSFET technology

IRS2505

Microcontrollers

Product family

PFC

USB-C controllers
and peripherals

Product type

PFC stage

Powermanagement ICs

Functional block

500-950 V MOSFETs

Recommended LED driver products

PFC stage

Main
stage

Linear LED
driver IC

Synchronousrectification

SensorsAC-lineinput

WBG semiconductors

LED driver with constant voltage output and linear/switch mode LED driver ICs

Linear LED driver IC product portfolio
Topology
LinearIC product family
BCR400W series

Low voltage drop LED driver IC

BCR430U/BCR431U

Robust LED driver IC

BCR40xU/BCR42xU

MOSFET technology
Integrated
SupportFunctional block
Lowest cost LED driver IC

For additional portfolio, take a look at Lighting ICs.

1) 700 V, 800 V and 950 V CoolMOS™ P7 are optimized for PFC andflyback topologies. 600 V CoolMOS™ P7 is suitable for hard aswell as so switching topologies (flyback, PFC and LLC)

2) PFC and resonant combo controllers3) Higher input voltage4) In addition to current configuration also constantlumen output (CLO) feature included

Click here to learn more:
www.infineon.com/lighting90Solutions

Plug & LEDs play

Applications

Plug & LEDs play solutions

15-300 V MOSFETs

Modular LED lighting reference designs for LLC, buck, and PFC flyback
topologies

80 V high-side buckDual-stage half bridge
LLC (320 W)

REF_ILD8150_DC_1.5A

REF_LLC_BUCK_4CH-320W

REF_ILD8150_DC_1.5A_SMD

Digital isolators

60 V linear controller

Flyback converter withconstant voltage output(42 W)

Gate-driver ICs

DC-DC conversion

IGBT discretes andsilicon power diodes

AC-DC conversion

500-950 V MOSFETs

LED lighting has become a mature technology with stringent requirements on light quality. In order to achieve highlight quality, there is a strong trend towards two-stage topologies. These two-stage topologies ensure that the lightflicker, also called light ripple, remains at low levels according to the IEEE 1789 standard and other new upcoming
regulations. Primary constant voltage output, followed by a DC-DC buck, enables dimming, efficiency, cost, andscalability benefits. Infineon has solutions for both the primary AC-DC stage as well as for the secondary DC-DC buckstage. These solutions can be combined in a plug-and-play concept. In other words, the suitable AC-DC stage and thebest-fitting DC-DC stage can be selected and tested depending on the requirements.

REF_ILD8150_DC_1.5A
DEMO_BCR601_60V_IVCTRLREF_ILD8150_DC_1.5A_SMD
REF_TW_BCR601_55V_0.5A
REF_TW_ILD8150E_60V_1AIntelligent powerswitches and modules

REF_ICL8810_LED_43W_BM

USB-C controllers
and peripherals

REF_TW_BCR601_55V_0.5A

Power
management ICs

REF_ICL8810_LED_43W_BM

Microcontrollers

Our solutions include but are not limited to:
Low to medium power platform promising tunable white at low cost

WBG semiconductors

320 W DCM PFC cost-effective and scalable platform design with up to 4 DC-DC channels

REF_ILD8150_DC_1.5A

Sensors

REF_LLC_BUCK_4CH_320W

Click here to learn more:
Supportwww.infineon.com/leddriver-reference-solutions
91

Solutions

Smart lighting solutions

Applications

Smart lighting solutions

15-300 V MOSFETs

Connectivity and sensor solutions for connected andsmart lighting to facilitate everyday life
Sensor & connectivity hub 3 ....

In the last few years, connected and smart lighting
have gained high momentum in the lighting industry.
In this application field, sensing and connectivity play
an essential role. Besides helping realize energy
savings, they also enable new use cases
beyond lighting controls.

Sensor & connectivity hub 2Bluetooth®
system-on-chip
LightingAPICO2
sensor

UART/I2C/SPI

Gate-driver ICs

LED driver

500-950 V MOSFETs

Sensor & connectivity hub 1

Security

HVAC

Radar sensor solutions

Bluetooth® internet
gateway
Bluetooth LE+ Wi-Fi

Security

IGBT discretes andsilicon power diodes

Building
management
systemDigital isolators

Radar sensor

Cloud

Microcontrollers

Intelligent powerswitches and modules

For energy saving, passive infrared (PIR) sensors are used. Novel sensors like radar can overcome weaknesses of PIR
sensors like poor design, limited detection of micro-movements, and limited area coverage, to name a few. Radarsensors can be seamlessly integrated into the luminaires enabling nice design as well as platform design of luminaires
since there is no need for drilling holes as in the case of PIR sensors. Advanced use cases like people counting andpeople tracking can also be ensured with radar technology. In order to add more intelligence to the entire system,
connectivity is a key element.

RF BeamTopology
K-LD2

IC product familyPowermanagement ICs

Functional block

USB-C controllers
and peripherals

Our partners:
Our system design house partners deliver both standard products and customized solutions to fit specific lighting
applications from movement detection through automatic light activation to person counting. In addition, they offer
all levels of support to get your intelligent lighting system up and running as quickly and efficiently as possible. See
below a list of some of our partner solutions:

Presence detection including slight movements
Motion detection range up to 5 m

INS-333x

Motion detection range up to 10 m

RIOT100 – NRM302

Turnkey motion and presence sensor solution up to 15 m

Sensors

Novelic

INS-313x

Click here to learn more:
www.infineon.com/smart-lighting
www.infineon.com/makeradar

SupportInnoSent

WBG semiconductors

K-LD7

92

Applications

Solutions

Smart lighting solutions

500-950 V MOSFETs

15-300 V MOSFETs

Bluetooth® Mesh devices and modules for connected and smart lighting applications
Embedding Bluetooth® Mesh networking in lighting systems, including luminaires, fixtures, and wall switches, opens
a range of system applications to manage lighting brightness or color, efficiency based on occupancy movements,
and correlation of lighting ecosystem components. The range and coverage of Bluetooth® Mesh devices allow for low
latency, whole building coverage of automation and occupancy interaction via smartphone and tablet applications,and cloud applications for building management. Infineon provides a range of Bluetooth® Mesh MCUs and certified
modules that enable lighting control functionality, safety and occupancy sensor management, and robust, secure,reliable networked managed solutions.

– Fully-integrated modules– Accelerate time-to-market– Reducing development and manufacturing costs– Enabling long range and unfailing node-node connections– Suiting all foreseeable applications hosting

battery-powered sensor to the most sophisticated detection and safety devices– Ultra-high-transmit power designs with integrated antennas– Integrated CPU, memory (flash and RAM) and I/O

Utilized device: CYW20819
Kit contents:
4x mesh evaluation boards
4x USB A to micro-B cables
1x quick-start guideSensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Bluetooth® Mesh evaluation kit CYBT-213043-MESH
The Bluetooth® Mesh evaluation kit (CYBT-213043-MESH) enables you toevaluate SIG Mesh functionality and features using the CYBT-213043-02
module. The CYBT-213043-02 module is an integrated, fully certified, 12.0mm x 16.61 mm x 1.70 mm, programmable Bluetooth® Smart Ready module
designed to reduce your time-to-market.

IGBT discretes andsilicon power diodes– Accommodating different needs now and in future

Digital isolators

Benefits– Module diversity with integrated components ranging from the basic

Intelligent powerswitches and modules

SolutionsGate-driver ICs

Bluetooth® Mesh SoCs and certified modules: solutions and benefits
Bluetooth® Mesh system-on-a-chip (SoCs) and certified modules offer a range of efficient and future-proof
upgradeable solutions:

Click here to learn more:
Supportwww.infineon.com/smart-lighting
www.infineon.com/makeradar93Applications

Solutions

Smart lighting solutions

Mesh-enabled, silicon, dual-mode Bluetooth® 5.0 AIROC™ MCUs
CYW20735

CYW20819

CYW20820

CYW2082915-300 V MOSFETs

CYW20706

CM3

CM4 w/FPU

CM4

CM4

CM33

TBA radio–

ULP RFULP RFULP RFULP RF

Operating temperature
Transmit power
Memory

105°C

85°C

125°C planned

125°C planned

85°C

10 dBm Tx

10 dBm Tx

4 dBm Tx

10 dBm Tx

10 dBm TX––

256 kB flash

256 kB flash

256 kB flash

Gate-driver ICs

TBA processor

500-950 V MOSFETs

Product features

Digital isolators

Features/integration
Interested in more? We offer a broad silicon portfolio to support your Bluetooth® Mesh design.

Integration
Fully integrated SoC
with lowest power andextended range

CYBT-343052-02

CYBT-273063-02

Intelligent powerswitches and modules

Value
Balance of features for costsensitive applications

Microcontrollers

CYBT-353027-02

USB-C controllers
and peripherals

CYBT-483056-02

Powermanagement ICs

Size and simplicity
EZ-Serial support enables fasttime to market and 9x9 mm
size for small form factor
application

Sensors

WBG semiconductors

Load range
Up to 20 dBm transmit
power

IGBT discretes andsilicon power diodes

Fully-certified Bluetooth® modules (FCC, ISED, MIC, CE)

Click here to learn more:
Supportwww.infineon.com/smart-lighting
www.infineon.com/makeradar
94

IoT Wi-Fi portfolio
Wi-Fi + MCU

CYW43439

CYW43364

SB 1x1 11n + BT5.2
SDIO/SPI

SB 1x1 11n | SDIO

Wi-Fi 4(802.11n)

Wi-Fi + Bluetooth® Combos

CYW43903

SB 1x1 11n + 160-MHz R4

CYW43012

ULP DB 1x1 11n + BT5.1
SDIO/SPI WLBGA/WLCSPIGBT discretes andsilicon power diodes

CYW43907

1x1 DB 11n + 320-MHz R4

1x1ac DB + 320-MHz R4

Wi-Fi 5(802.11ac)

CYW54590

DB 2x2 11ac + BT 5.1
PCIe/SDIOIntelligent powerswitches and modules

CYW54907

15-300 V MOSFETs
Gate-driver ICs

Wi-Fi

Digital isolators

Technology

500-950 V MOSFETs

Wi-Fi enterprise networking and internet connectivity
Wi-Fi networking is the backbone of enterprise, retail, and home internet connectivity. Wi-Fi is the bridging medium forBluetooth® Mesh networks to enterprise networks and cloud applications capturing messaging from across the lighting
installation for secure enterprise building management applications. Wi-Fi can also connect sensors and fixtures
directly to enterprise or home access points for long-range solutions or integrated solutions including security lighting
and cameras. Infineon offers a range of secure, high-performance enterprise-ready Wi-Fi solutions that can be added
to switches, panels, and lighting bays. These solutions can be stand-alone network nodes or offer Bluetooth® Mesh
Gateway services bridging Mesh-networked devices to cloud applications.

Applications

Solutions

Smart lighting solutionsCYW4373

DB 1x1 11ac + BT5.0
USB/SDIO/PCIeMicrocontrollers

CYW54591

USB-C controllers
and peripherals

DB 2x2 11ac, RSDB, BT5.1
PCIe/SDIO

Infineon’s Wi-Fi portfolio provides high-performance, flexible connectivity for Linux, Android, and RTOS.
Many of the Wi-Fi + Bluetooth® Combos are supported on Infineon’s WICED Wi-Fi and ModusToolbox™ Software
Development Kits (SDK) which provide code examples, tools and development support.

Sensors

WBG semiconductors

Powermanagement ICs

Infineon’s Wi-Fi and Bluetooth® Combos use production-ready, fully-certified Wi-Fi + Bluetooth® Combo modules
based on both Linux and RTOS based platforms. Many of the Wi-Fi + Bluetooth® Combos are supported on Infineon’s
WICED Wi-Fi and ModusToolbox™ Software Development Kits (SDK) which provide code examples, tools and development support for easier and faster development.

Click here to learn more:
Supportwww.infineon.com/smart-lighting
www.infineon.com/makeradar95

Applications

Solutions

Smart lighting solutions

PSoC™:
PSoC™ running RTOS
3rd-party SoC running Linux OS

P/N: CY8CKIT-06S2-43012
PSoC™ 6: Ultralow-power dual-core MCU

CYW20829:
Dedocated Bluetooth® LE 5.4 MCU

CYW43439*:
1x1n Wi-Fi + Bluetooth® Combo SoC

CYW43012 (Murata Type 1LV): Dedicatedlow-power Wi-Fi + Bluetooth® 5 Combo SoC

Gate-driver ICs

CYW43907:
MCU + Wi-Fi

500-950 V MOSFETs

15-300 V MOSFETs

Wi-Fi enterprise networking and internet connectivity

Digital isolators

We offer a broad platform portfolio to support your Bluetooth® Mesh gateway.

IGBT discretes andsilicon power diodes

IoT Wi-Fi portfolio
A global Wi-Fi module partner ecosystem enables support and development for your IoT application.

Microcontrollers

Intelligent powerswitches and modules

Design, build, and sell RF Modules
with limited software and hardware
certification support

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Module makers

Click here to learn more:
Supportwww.infineon.com/smart-lighting
www.infineon.com/makeradar96

Applications

Solutions

Telecommunication
infrastructure

Telecommunication infrastructure

15-300 V MOSFETs

Cutting-edge semiconductors for mobile communication,
network equipment and beyond

Gate-driver ICs

500-950 V MOSFETs

As the global demand for data grows, the call for improved connectivity, performance, and coverage has reachedpeak significance. Alongside these demands, enhancing energy efficiency has also emerged as a critical factor in
our collective journey towards a greener world. A significant step in this direction is the introduction of 5G mobile
telecommunications: known for its high-speed and reliable connectivity, 5G also brings substantial advantages in
power consumption, providing a more energy-efficient solution to meet our increasing data needs.

IGBT discretes andsilicon power diodes

Digital isolators

Over the years, Infineon has gathered a wealth of expertise and insights in the telecommunications sector, building an
extensive portfolio of high-quality semiconductors spanning from “grid to air” to enable efficient power conversion,robust security, seamless connectivity and playing a pivotal role in powering a greener and more sustainable world.

Key benefits– Broad portfolio covering the complete power flow and more
– Best-in-class power semiconductor solutions based on Si, SiC, and GaN– 20+ years of quality track record in the telecommunications industry– Trusted partner with reliable manufacturing capabilities– One-stop-shop, complete offering and deep system competence– High power density, efficiency and reliability– Robust solutions, reliable performances– Continuous investments in capacity and business continuity

Microcontrollers

Key features

Intelligent powerswitches and modules

Features and benefits

Application diagram
AC-DC rectifier
VOUT= 44-60 VDC (54 VNOM)

HV DC-DC converter

Battery backup unit (BBU)

VOUT = 12 VDC

ACsourcePower factor
correction (PFC)

Isolated DC-DC
secondary side

Isolated DC-DC
primary side

Protection

USB-C controllers
and peripherals

VIN_RANGE = 85-305 VAC

Oring
BBU charge/discharge converterPowermanagement ICs

Hot-swap

Intermediate bus converter (IBC)

Primary side

12 V

Secondary side

WBG semiconductors

Isolated DC-DC converter
Non-isolated DC-DC converter

28 V...50 V
Antenna array
Digital signage processing

CU/DU

RF sampling front end
RF front end

Sensors

LV DC-DC conversion

eCPRI

Click here to learn more:
Supportwww.infineon.com/telecominfrastructure www.infineon.com/bms-server-telecom www.infineon.com/memorywww.infineon.com/telecom-acdc
www.infineon.com/fpga-telecom
www.infineon.com/ict-security97Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs

Product portfolio

Auxiliary power

Telecom rectifiers require an auxiliary SMPS power source that works
separately from the main power supply to support, for instance, standby
operation. Power ratings can vary from a few to a few tens of watts for theseauxiliary supplies, which can be either isolated or non-isolated.

– CoolSET™ AC-DC integrated power stages– XENSIV™ high-precision coreless current sensors

Battery
Management
System (BMS)The battery management system ensures the high performance and safe
operation of Li-ion batteries. It performs actions such as state of charge(SOC) and state of health (SOH) estimations. In battery back-up systems, theBMS circuit is coupled with a DC-DC converter to ensure a regulated output
voltage. The DC-DC stage is bidirectional and usually a buck-boost topology,
single or multiphase.

– OptiMOS™ low voltage MOSFETs– EiceDRIVER™ gate drivers– PSoC™ microcontrollers for power management

Hotswap

Industry’s first wide voltage range hot-swap controller with a programmabledigital safe operating area (SOA) control and a superior current reporting
accuracy of < +/- 0.75%.

– XDP™ XDP710 hot-swap controller with a programmable digital SOA

DC-DC conversion Infineon provides DC-DC conversion solutions for radio units, AAS, and
DU/CU servers. Infineon's growing portfolio targets all stages of DC-DC
conversion from 48 V intermediate bus converters (IBC) down to point-ofloads used to supply analog front-end (AFE), field-programmable gate arrays(FPGA), or application-specific integrated circuits (ASIC). The multiphase
controller plus integrated power stage solutions allow the power designer toaddress the most stringent dynamic requirements when providing supply tohigh-performance processors.

– XDP™ XDPP1100 Digital power controller– OptiMOS™ low voltage MOSFETs– EiceDRIVER™ gate drivers– ISOFACE™ digital isolators– XENSIV™ high-precision coreless current sensors– Integrated power stages: combining OptiMOS™ with intelligent gate

USB-C controllers
and peripherals

Microcontrollers

control

drivers through Infineon’s superior packaging technologies– Integrated Point of Loads: including digital, analog, and constanton-time options– Digital multiphase controllers: a wide portfolio supporting multiple

communication protocols such as Intel SVID, AMD SVI2, AVS bus andPMBus, and offering a variety of programmable features– High performance memory solutions– RF front-end driver amplifiers: these small yet mighty amplifiers can

RF front-end

Discover Infineon's RF front-end components for massive MIMO antenna
systems in telecom infrastructure applications. Our portfolio of compact andefficient devices such as bias and control ICs and driver amplifiers ensure
reliable signal transmission and reception with high quality and top-notch
performance.

Security– OPTIGA™ TPM - Trusted platform module
Security in 5G networks is vital for data privacy, maintaining network
integrity, preventing cyber-attacks, ensuring regulatory compliance, building – OPTIGA™ Authenticate for authenticity verification of devices andsystemsuser trust, securing IoT, and enabling new technologies. It helps protect
sensitive data, prevent disruptions, and promotes safe, reliable operations. – OPTIGA™ Trust M high-end security solution offering a wide range of
security features

MemoryReliable and performant NOR Flash and RAM memory solutions for codestorage, efficient data logging, high-speed cache and more.

IGBT discretes andsilicon power diodes

The telecom rectifier typically converts the single or the three-phase AC input – CoolMOS™ high voltage MOSFETs– OptiMOS™ low voltage MOSFETs
into 12 V, 48 V, or 54 V DC output. The power factor correction (PFC) shapes– EiceDRIVER™ gate drivers
thepower supply‘s input current to be in synchronization with the AC input– XMC™ microcontrollers
voltage to maximize the real power drawn from the mains. Followed by an– ISOFACE™ digital isolators
isolated DC-DC converter and synchronous rectification stage, the telecom– CoolSET™ auxiliary SMPS controllers
rectifiers achieve the highest efficiency and power density levels.
– CoolGaN™ GaN HEMTs ideal for soft-switched and hard-switched highfrequencies topologies– CoolSiC™ MOSFETs ideal for high-current applications in hardswitched topologies

Intelligent powerswitches and modules

Rectifier

Digital isolators

Featured products

be used as pre-drivers or drivers in RF applications such as mMIMO 5Gbase stations to small cells and access points– RF front-end bias and control ICs: these highly integrated ICs are used
to bias radio-frequency power amplifiers by generating accurate
voltage with high-precision DACs

Sensors– SEMPER™ NOR Flash– Broad RAM portfolio

Powermanagement ICs

Description

WBG semiconductors

Functional block

Click here to learn more:
Supportwww.infineon.com/telecominfrastructure www.infineon.com/bms-server-telecom www.infineon.com/memorywww.infineon.com/telecom-acdc
www.infineon.com/fpga-telecom
www.infineon.com/ict-security98Solutions

Data center and computing

Applications

Data center and computing

15-300 V MOSFETs

Energy-efficient and top-performing data storage technologies

Key benefits– Broad portfolio from AC-to-core– Best-in-class SMPS densities achieved with Si, SiC, GaN hybrid solutions– Industry-best vertical power delivery solutions for next gen power processor– Broad portfolio of solutions to support 48 V DC-DC and hot-swap– Trusted partner with reliable manufacturing capabilities– One-stop-shop, system offering and deep system competence– Enables SMPS designs up to 12 kW with 100 W/in3 power density– Achieves 2% higher efficiency versus competition and 12% TCO savings versus

Intelligent powerswitches and modules

Features and benefits
Key features

lateral power delivery solutions– Solutions support all DC-DC step-down ratios, and reliable SOA protection for
hot-swap

Microcontrollers– Continuous investments in capacity and business continuity

Application diagram

12 V / 48 V
AC-DC

6 V / 12 V

Hot-swap

48 V

Multi-phase and single phase
POL DC-DC

48 V

48 V
DC-DC

USB-C controllers
and peripheralsEMIfilter

6 V / 12 V
CPU

GPU

BMS

AI card

DC-DC

Multi-phase
controllers

Powermanagement ICs

Battery back-up unit
(BBU)

BMC

Integrated
power
stagesFPGA

WBG semiconductors

NIC card

NetworkswitchIntegrated
POL

Storagecontroller
StoragememorySensors

External memory
Security

Click here to learn more:
www.infineon.com/datacenter
www.infineon.com/server-power-supplies www.infineon.com/bms-server-telecom
www.infineon.com/acceleratorcard www.infineon.com/48v-power-distribution www.infineon.com/fgpa-datacenter

SupportAC
line

Digital isolators
IGBT discretes andsilicon power diodes

Infineon’s multi-pronged innovation strategy with power semiconductor technologies, including silicon and wide bandgap, advanced packaging technologies with discrete and multi-die, as well as system architectures, smart control andsoftware, offers a unique opportunity to offer a truly optimized system solution from AC-to-core, offering improved
data center TCO by saving up to 48.3 TWh per year, ~$10 Bn electricity cost and 34.2 M metric tons CO2 equivalents.

Gate-driver ICs

500-950 V MOSFETs

The trend towards digitalization and rapid adoption of generative AI is creating exponential growth in global data
generation, substantially impacting data center and computing infrastructure requirements. The chips performing
the AI acceleration tasks are expected to complete training cycles faster. With each generation of AI processor, thepower requirements are increasing to meet the required computational performances. This drives system power
requirements up dramatically, creating significant power density challenges. Effective data center and computing
designs must, hence, combine high power density with efficiency: our solutions enable green and efficient computing
platforms that reduce the overall power consumption in data centers and actively contribute to the decarbonization of
our world.

99

Product portfolio
Description

Featured products

Infineon’s wide portfolio of semiconductors offers a complete systemsolution to meet the diverse requirements of server and data center SMPS.
From high-voltage and low-voltage MOSFETs to gate drivers, microcontrollers, and auxiliary SMPS controllers. A wide portfolio of robust and reliable
Wide Band Gap solutions is available to boost efficiency and density further:
SiC is perfect for hard-switching topologies and high temperature operating
conditions, while GaN is better suited for hard- and soft-switching and highfrequency. A hybrid approach achieves the best trade off between efficiency,
power density and system cost.

– CoolMOS™ high voltage MOSFETs– OptiMOS™ low voltage MOSFETs– EiceDRIVER™ gate drivers– XMC™ microcontrollers– CoolSET™ auxiliary SMPS controllers– CoolGaN™: thanks to their low Qg and Qoss charges, they are ideal forBattery backup
unit (BBU)

The battery management system ensures the high performance and safe
operation of Li-ion batteries. It performs actions such as SOC (state of charge) and SOH (state of health) estimations. In BBU systems, the BMS circuit iscoupled with a DC-DC converter to ensure a regulated output voltage. The
DC-DC stage is bidirectional and usually a buck-boost topology, single ormultiphase.

– OptiMOS™ MOSFETs: explore Infineon’s portfolio of protection

Hot-swap

Industry’s first wide voltage range hot-swap controller with a programmabledigital SOA (Safe Operating Area) control and has superior current reporting
accuracy of < +/- 0.75%. Use with OptiMOS™ and OptiMOS™ Linear FET for
reliable SOA performance.

– XDP™ XDP710 hot-swap controller with a programmable digital SOA

48 V DC-DC

The 48 V conversion ecosystem is being driven primarily by high power
applications such as AI, where system-level power distribution losses need
to be reduced and legacy 12 V architectures are no longer able to meet therequirements. This includes Infineon’s new intermediate bus converter (IBC)
solutions, for HSC and ZSC topologies, for high efficiency and high-power
density applications.

– XDP™ XDPP1100 Digital power controller– OptiMOS™ MOSFETs: explore Infineon’s portfolio of protection

controlswitches preventing damage and failures to meet the necessary
telecommunication’s safety requirements– EiceDRIVER™ gate drivers

Multi-phase and Digital controllers: Industry’s most mature and advanced controller technosingle phase POL logy with best-in-class transient response. Flexibility with ARM® Cortex® M0
DC-DC
microcontroller for faster design cycle and tailored performance. Multi-protocol support with up to 16-phases & support 1500A+ current levels. Smartpower stages: Best-in-class efficiency and robustness with OptiMOS™
MOSFETs and superior packaging technologies. Greater current reporting
accuracy (+/-2%) with current-mirror sense technology. Industry standard
footprints with higher electrical and thermal performance. Integrated POL:
Best-in-class performance and robustness with OptiMOS™ MOSFET andsuperior packaging technologies. Ease of use with analog and digital smart
POL solutions. Industry’s best transient performance with Fast ConstantOn-Time (COT) control.

– Digital multiphase controllers: a wide portfolio supporting multiple

Dual-phase pow- Industry’s first common footprint module that enables vertical power delier modules
very. Highest efficiency and superior thermal performance enabled throughOptiMOS™ smart power stages, inductor-on-top topology (IFX patented IP)
and chip embedded packaging to enable <1 C°/W.

– TDM22544D and TDM22545D dual-phase power modules integrate

communication protocols such as Intel SVID, AMD SVI2, AVS bus andPMBus, and offering a variety of programmable features– Integrated power stages: combining OptiMOS™ MOSFETs with intelligent gate drivers through Infineon’s superior packaging technologies– Integrated point of loads: including digital, analog and constant on-time options– Voltage regulator for Ampere, Intel, and AMD server CPUs
– Voltage regulator for AI accelerator card, SmartNIC card, networking
and switch platform– Power management solutions for FPGAs– Network switch– Storage controllers– Raid storage solutions

Sensors

two phases of a multiphase buck regulator, lowering the area of 40%
compared to an equivalent discrete solutions

USB-C controllers
and peripherals

Microcontrollers

switches preventing damage and failures to meet the necessary
telecommunication’s safety requirements– Power management ICs: PCIMs support comprehensive power
supplies with a small form factor footprint for system solutions using
TRAVEO™, AURIX™ and PSoC™ MCU families– Gate drivers: every switch needs a driver and it is important to selectthe right one, that is why Infineon has over 500 EiceDRIVER™ gate driver IC solutions covering different output current options and offering
different combinations of protection features

Intelligent powerswitches and modules

they are ideal for high-current server PSU applications in hard-switched topologies

IGBT discretes andsilicon power diodes

soft-switched and hard-switched high frequencies topologies– CoolSiC™: thanks to their low increase of Rdson over temperature,Powermanagement ICs

Server power
supply unit

WBG semiconductors

Functional block

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

15-300 V MOSFETs

Applications

Solutions

Information and communication
technologies (ICT)Click here to learn more:
Supportwww.infineon.com/datacenter
www.infineon.com/server-power-supplies www.infineon.com/bms-server-telecom
www.infineon.com/acceleratorcard www.infineon.com/48v-power-distribution www.infineon.com/fgpa-datacenter100Solar PV

Solutions

Renewables - residential and commercial
solar infrastructure & energy storage systems

Applications

Solar PV

20-300 V MOSFETs

High efficient solutions for photovoltaic energy systems

IGBTs - discrete
IGBTs power modules
Gate driver ICs

MemoryCurrent sensing
Microcontrollers-

EiceDRIVER™
High-side isolated (1ED020I12-xx)
Single-channel isolated (1ED3890, 1ED3491)
Driver Boards (2ED300C17-xx)

Gate-driver ICs

CoolMOS™
TO-247-3/TO-247-4/D2PAK/TOLL/Q-DPAK
600 - 950 V
CoolSiC™ MOSFET discreteTO-247-3/TO-247-4/D2PAK-7
650 V/1200 V/1700 V/2000 V
CoolSiC™ hybrid modules
Easy 1B/2B/3B
650 V to 1200 V
CoolGaN™
DSO-20/TOLL
100 - 700 V
650 V/1200 V TRENCHSTOP™ 7 H7TO-247-3/TO-247-4/TO-247PLUS
600 V/650 V/1200 V
Easy 1B/2B/3B/4B--

CoolGaN™
DSO-20/TOLL
100 - 700 V---

EiceDRIVER™
2EDi/1ED Compact/2EDL/1EDN

EiceDRIVER™
2EDi/1EDB/2EDL/
1ED Compact(1ED-AF)
650 V SOI/1EDB-

CoolSiC™ Schottky diodes
DPAK/D2PAK650 V/1200 V-

AIROC™ Wi-Fi + Bluetooth® Combos/PLC-

AIROC™ Wi-Fi + Bluetooth® Combos/PLC
CoolSET™

EiceDRIVER™
2EDi/650 V SOI/
X3 Compact(1ED31xx)
X3 Analog(1ED34xx)
1ED-F3/1EDB/IRS2011
CoolSiC™ Schottky diodes
TO-220/TO-247/D2PAK650 V/1200 V
BAT165 Schottky diode650 V/ 1200 V Emitter Controlled 7
AIROC™ Wi-Fi + Bluetooth® Combos
CoolSET™ / CoolSiC™

EXCELON™ F-RAM

EXCELON™ F-RAM

EXCELON™ F-RAM/Asynchronous SRAM

EXCELON™ F-RAM F-RAM/Asynchronous SRAMXENSIV™

XENSIV™

XENSIV™

XENSIV™

XMC1000 Arm® Cortex®-M0

32-bit PSoC™ 4 Arm® Cortex®-M0/M0+

32-bit XMC7000 Industrial Microcontroller Arm® Cortex®-M7 32-bit XMC7000 Industrial Microcontroller Arm® Cortex®-M7

XMC4000 Arm® Cortex®-M4

XMC4000 Arm® Cortex®-M4

XMC4000 Arm® Cortex®-M4

Digital isolators--

SiC diodes
Si diodes
Connectivity
Auxiliary power
supply--IGBT discretes andsilicon power diodes

GaN HEMT

OptiMOS™
150 V - 300 V

CoolSiC™ hybrid modules
650 V to 1200 V
PrimePACK™ 3+/EconoDUAL™ 3/62 mm

Intelligent powerswitches and modules

SiC MOSFETs power modules-

Central inverter
500 kW - 5000 kW-

Microcontrollers

SiC MOSFETs discrete

OptiMOS™
SuperSO8/TOLL
60 - 150 V
CoolMOS™
TOLL/D2PAK
600 - 950 V
CoolSiC™ MOSFET discrete D2PAK-7/TOLL
650 V/1200 V

String inverter
2 kW - 350 kW

XMC4400 ARM® Cortex®-M4
CoolSIC™

USB-C controllers
and peripherals

Si MOSFETs

OptiMOS™
SuperSO8/TOLL/TOLT
60 - 200 V-

Micro inverter
250 W - 1500 W

XMC4000 Arm® Cortex®-M4

Powermanagement ICs

Power optimizer
250 W - 1300 W

500-950 V MOSFETs

Infineon provides a comprehensive portfolio to deliver the best efficiency and reliability for solar applications. Cutting-edge technologies such as CoolMOS™ SJ MOSFETs, CoolSiC™
Schottky diodes, CoolSiC™ MOSFETs, CoolGaN™ HEMT and TRENCHSTOP™ IGBTs. All these power transistors can be safely operated by EiceDRIVER™ coreless transformer gate drivers.
Beyond power stage with the rich experience and highest quality ensure Infineon’s unique supplier position, which enables one-stop-shop for solar applications. 32-bit ARM® Cortex®
MCU families enable easy and high-efficiency design for power conversion blocks. Additionally, our Arm® Cortex®-M0-PSoC™ 4 entry-level family can also be used for PLC (Power Line
Communication). Wi-Fi connectivity can be provided by our AIROC™ family of devices.

WBG semiconductors

Infineon’s product portfolio supports full solar ecosystem including energy storage and EVcharging. Solar power optimizers and micro inverter find their place on the roof right underPV panels. They are exposed to very high ambient temperatures, high thermal cycling andhave to meet 25 years life-time, which is equivalent to PV panels. With Infineon’s stringent
quality measures and production screening processes all these can be met.

Sensors

We see on the picture string inverter installed on the wall. Its product offering is shown below
for single-phase and three-phase configurations. Energy Storage Solutions (ESS) and EVcharging solutions are placed in respective application chapters in this selection guide.

Click here to learn more:
Supportwww.infineon.com/solar
101

Solutions

Solar PV

Voltage class [VDS max]

SuperSO8

80 V

SuperSO8 SC
SuperSO8

Power optimizer

DC / DC converter(MPPT)

PO

PO

String inverter

100 V

Multiple
Power Optimizers
in series

Gate driver

120 V
150 V

Grid

200 V
Gate driver

Auxiliary
power
supplyEiceDRIVER™

Single channel
Dual channel

Connectivity

1EDN7116G

SON-8

2EDL8024G

DSO

IRS2011

XMC1000 for control loop / PSoC™ 4 for PLC communication

MemoryEXCELON™

CY15B102QN-50SXE (F-RAM)

Auxiliary power supply-

TLE8366EV (PWM step-down DC/DC converter)

Connectivity

AIROC™

CYW43439 (Wi-Fi 4) / CYW4373 (Wi-Fi 5)PLC

CY8CPLC20-48LTXITXENSIV™

TLI4971-A025T5

Functional block

Micro inverter

MPPT – Boost stage

Product family
OptiMOS™

Voltage class [VDS max]

SuperSO8

80 V

SuperSO8 SC
SuperSO8

Micro inverter

100 V
DC/DC
(MPPT)

DC/AC(MPPT)

OptiMOS™

CoolMOS™

Grid

120 V
150 V

CoolSiC™

200 V

CoolGaN™

CoolSiC™ Schottky diode
Gate driver

1200 V

Gate driver: EiceDRIVER™

Current
sensorIsolated

Package*

60 VSuperSO8 SC
SuperSO8
SuperSO8 SC
SuperSO8
SuperSO8

6.6 mΩ
6.0 mΩ
2.8 mΩ
2.6 mΩ
3.1 mΩ
1.6 mΩ
6.0 mΩ
4.0 mΩ
3.0 mΩ
9.3 mΩ

TOLTSuperSO8TOLL
DPAK

IPTC044N15NM5
ISC130N20NM6
IPT067N20NM6
IDM02G120C5

4.4 mΩ
11.9 mΩ
6.7 mΩ
2A

IDM05G120C5

5A

DSO

IRS2011S, IRS2005S, IRS2007S, IRS2008S
2EDL8034F5B
CoolMOS™

Auxiliary
power supply

600 V

TO-Leadless

IPT60R102G7

102 mΩ

D2PAK

IPB60R145CDF7

145 mΩ

D-DPAK

IPDD60R105CFD7

105 mΩ

D2PAK

IPB65R125CFD7

125 mΩ

D2PAK

IPB65R041CFD7

41 mΩ

DSO-20-87

IGOT60R070D1

70 mΩ

TO-Leadless

IGT60R070D1

70 mΩ

TO-Leadless

IMT65R163M1H

163 mΩ

D2PAK-7

IMBG65R163M1H

163 mΩ

1200 VD2PAK-7

IMBG120R181M2H

181 mΩ

650 V

DSO

2EDS8165H

650 V

XMC™

Connectivity
MemoryAIROC™

2EDN7524F
2ED24427N01F

Inverter stagePSoC™

RDS(on)

BSC066N06NS
ISC060N06NM6
BSC028N06NSSC
BSC026N08NS5
ISC031N08NM6
IQD016N08NM5CG
ISC060N10NM6
BSC040N10NS5SC
ISC030N12NM6
BSC093N15NS5

Non-isolated

Microcontroller

Part number*

Digital isolators

Data cloud

XMC™ / PSoC™

Gate-driver ICs

2EDL8034F5B
Microcontroller

Current sensor

Current
sensorSON-10PLC

Communication
gateway

CoolGaN™

600 - 700 V

CoolSiC™ MOSFET

650 V

PLC

Gate driver: EiceDRIVER™

2EDR8259X
Communication gateway

2EDS9265H

Data cloud1200 V

1EDI60I12AF, 1EDI30I12MF

Microcontroller

XMC™ / PSoC™

XMC4000 for control loop / PSoC™ 4 for PLC communication

MemoryEXCELON™ F-RAM

CY15B102QN-50SXE

Auxiliary power supply

CoolSET™

ICE5QR4780BG (800 V, 15 W, Quasi-Resonant)Connectivity

AIROC™

CYW43439 (Wi-Fi 4) / CYW4373 (Wi-Fi 5)PLC

CY8CPLC20-48LTXITXENSIV™

TLI4971-A025T5

Click here to learn more:

Current sensor

Sensors

ICE5GR4780AG (800 V, 15 W, Fixed-Frequency)

www.infineon.com/solar

Support

PV panel

4.4 mΩ
11.9 mΩ
6.7 mΩ

IGBT discretes andsilicon power diodes

AIROC™

IPTC044N15NM5
ISC130N20NM6
IPT067N20NM6
1EDN8550

Intelligent powerswitches and modules

MemoryTOLTSuperSO8TOLL
PG-SOT23-6

Microcontrollers

XMC1000

SuperSO8
SuperSO8 SC
SuperSO8
SuperSO8

USB-C controllers
and peripherals

Microcontroller
PSoC™

RDS(on)
5.8 mΩ
6.0 mΩ
2.8 mΩ
2.1 mΩ
3.1 mΩ
6.0 mΩ
4.0 mΩ
3.0 mΩ
9.3 mΩ

Power
management ICs

Current
sensorPart number*
ISC058N04NM5
ISC060N06NM6*
BSC028N06NSSC
BSC021N08NS5
ISC031N08NM6*
ISC060N10NM6
BSC040N10NS5SC
ISC030N12NM6
BSC093N15NS5

WBG semiconductors

PV panel

Package*

60 V

Applications

Product family
OptiMOS™

20-300 V MOSFETs

DC-DC converter

500-950 V MOSFETs

Functional block

Power optimizer

102

Solutions

Solar PV

Low-side(Non isolated)

High-side(Isolated)

3-levelNPC2

discrete

15 mΩ -TO-Leadless

IMBG65R015M2H

22 mΩ -

TO-247-3

IKWH50N65EH7

-

50 A

TO-247-4

IKZA50N65EH7

-

50 A

TO-247

IDW20G65C5

-

20 A

IDW32G65C5B

-

32 A

OptiMOS™ 5

150 V

SuperSO8

BSC093N15NS5

9.3 mΩ -Inverter
2-level,e.g. Heric

Si MOSFET

CoolMOS™ CFD7

650 V

TO-247-3

IPW65R018CFD7

18 mΩ -

TO-247-4

IPZA65R018CFD7

18 mΩ -

TO-247-4

IPZA65R029CFD7

29 mΩ -Q-DPAK

IPDQ65R017CFD7

17 mΩ -

TO-247-4

IMZA65R015M2H

15 mΩ -

TO-247-3

IMW65R020M2H

20 mΩ -

TO-263-7

IMBG65R015M2H

15 mΩ -TO-Leadless

IMT65R022M1H

22 mΩ -

TO-247-4

IKZA50N65EH7

-

50 A

TO-247-3

IKWH50N65EH7

-

50 A

TRENCHSTOP™ 7 H7 1200 V TO-247-3

IGBT

CoolSiC™ MOSFET

650 V

TRENCHSTOP™ 7 H7 650 V

integrated

MPPT –IGBTBoost stage

Connectivity
Wi-Fi / Bluetooth / RS485

SiC MOSFET

CoolSiC™ MOSFETIKW40N120CH7

-

40 A

TO-247PLUS-3 IKQ75N120CH7

-

75 A

IKQ100N120CH7

-

100 A

IMW120R030M1H,
IMZ120R030M1H

30 mΩ -

IMW120R040M1H,
MZA120R040M1H

40 mΩ -

IMW120R060M1H,
IMZ120R060M1H

60 mΩ -

DF4-19MR20W3M1HF_B11

19 mΩ 120 A

1200 V TO-247-3/-4

Data cloud

Silicon carbide CoolSiC™ MOSFET
MOSFET
moduleInverter

IGBT

2000 V Easy 3B

TRENCHSTOP™ 7 H7 1200 V TO-247-3

IKW40N120CH7

-

40 A

TO-247PLUS-3 IKQ75N120CH7

-

75 A

IKQ140N120CH7

-

140 A

IMW120R030M1H,
IMZ120R030M1H

30 mΩ -

IMW120R040M1H,
MZA120R040M1H

40 mΩ -

IMW120R060M1H,
IMZ120R060M1H

60 mΩ -IMBF170R650M1

650mΩ

TRENCHSTOP™ 7 H7SiC MOSFET

CoolSiC™ MOSFET

1200 V TO-247-3/-4

1700 V D2PAK-7

Gate-driver ICs-

2000 V TO-247-4-PLUS IMYH200R012M1H

12 mΩ -

Silicon carbide CoolSiC™ MOSFET
MOSFET
module1200 V Easy 2B

IF3L8MR12W2M1HP_B11

8.1 mΩ -EiceDRIVER™

650 V

2EDS7165H

DSO-16650 V

2ED2181S06F

1200 V

IR2214SS, IR2213S

1200 V

1EDI60I12AF, 1EDI30I12MF

2300 V

1ED3124MU12H, 1ED3122MU12H

2300 V

1ED3322MC12N, 2ED020I12-F2

2300 V

1ED3491MU12M, 1ED3890MU12M

Applications

IMBG65R015M2H

20-300 V MOSFETs

15 mΩ -

TO-263-7

Si MOSFET

SiC MOSFET

Threephase

IMZA65R015M2H

Invverter
5-levelCurrent
sensor

Cooling fan

19 mΩ -

TO-247-4

500-950 V MOSFETs

3-level
NPC1

650 V

19 mΩ -IPZ65R019C7

Gate-driver ICs

Half-Bridge(Level-shift)

CoolSiC™ diode

IPW65R019C7

TO-247-4

Digital isolators

Half-Bridge(SOI Gate Driver

Diode

TO-247-3

IGBT discretes andsilicon power diodes

Gate driver

TRENCHSTOP™ 7 H7 650 V[A]

RDS(on)Intelligent powerswitches and modules

1000 & 1500 V PV input (3Φ)
3-level
ANPC

IGBT

Part number

Microcontrollers

650 V

Package

USB-C controllers
and peripherals

Grid

Auxiliary power supply

MemoryCoolSiC™ MOSFET

650 V

HERIC

Multilevel

Power modules
SiC, IGBTs
and hybrid

Microcontroller

CoolMOS™ C7

VoltagePowermanagement ICs

SiC MOSFET

MOSFETs & Schottky diodes

Current
sensorMPPT –Si MOSFET
Boost stage

600 V PV input (1Φ)

Carbide[NotSilicon
supportedby (SiC)
viewer]

EiceDRIVER™ 2EDN family, EiceDRIVER™ 1EDB
Microcontroller

XMC4000 and XMC7000

MemoryEXCELON™ F-RAM / Asynchronous SRAM

Auxiliary power supply Integrated: CoolSET™ Quasiresonant (QR) / CoolSET™ with Fixed Frequency (FF)

Sensors

Multilple
PV strings

Singlephase

Producttechnology

DC / AC inverter

DC / DC(MPPT & booster)Discrete
Si MOSFETs& IGBTs

Product
category

Discrete: CoolSET™ (QR or FF) + CoolMOS™ P7
Connectivity

Click here to learn more:
www.infineon.com/solar

AIROC™ CYW43439 (Wi-Fi 4) / CYW4373 (Wi-Fi 5)
ISOFACE™ digital isolators for RS485

SensingXENSIV™ TLI4971
Support

PV panelstring

Functionalblock

WBG semiconductors

Single- and three-phase string inverter

Inverter
type103

Solutions

Energy storage systems

Applications

Energy storage systems

15-300 V MOSFETs

Make energy storage systems the backbone of the new energy era with
our semiconductor system solutions

500-950 V MOSFETs

Facing diminishing fossil reserves, the world nonetheless needs to manage the rising demand for electrical energy
while meeting the growing call for urgent climate action. The transition to renewable energies has become inevitable.

Gate-driver ICs

Energy storage systems play a vital role in managing this transition successfully. Our system solutions help to makeenergy storage the backbone of the new energy era. Our unique application expertise and comprehensive offering
make us the natural choice to advance energy storage solutions in efficiency, performance, optimal cost, andinnovation.

Key features

Key benefits– Efficient power conversion in DC-DC and AC-DC stage– Power-dense design– Bi-directional power flow
– Li-ion battery safety and predictive maintenance– Long battery lifetime– Safe data transfer is essential– Improvement of system performance with industry-leading semiconductor– Offering such as OptiMOS™, CoolMOS™, CoolSiC™ MOSFETs, CoolGaN™ HEMTDigital isolators

Features and benefits

but also best-in-class modules and matching EiceDRIVER™ gate drivers

IGBT discretes andsilicon power diodes– Trust in a true partnership during the whole system’s lifetime– Full system provider form power conversion stage (PCS) to the battery ma-nagement system (BMS), monitoring of battery’s SOC, SOH, and cell capacity
through constant logging of critical parameters to measure the battery healthIntelligent powerswitches and modules– OPTIGA™ Trust family protects BMS and inverter against cyber attacks– Ultra-low-energy data-logging of key battery health parameters in F-RAM– XMC7000, XMC4000 and PSoC4 ARM® Cortex®-M7, ARM® Cortex®-M4 and Cortex®M0 MCU families enable easy-to-design and stable control over the system– ISOFACE™ digital isolators, AIROC™ Wi-Fi + Bluetooth® Combos

Microcontrollers

Application diagram
Bi-directional power conversion

Protection

DC-DC
conversion

Battery packDC-AC
conversion

Grid

USB-C controllers
and peripherals

Battery management system (BMS)

AC loadGate driver

...

...

Security

Auxiliary power
supplyMCUMemoryPowermanagement ICs

Gate driver

Sensing

Digital isolator
CAN/RS485

WBG semiconductors

Sensing/
monitoring

Sensing
Sensing

Microcontroller (MCU)

Connectivity
Wi-Fi / Bluetooth / RS485

MemorySensors

Gate driver...

Click here to learn more:
Supportwww.infineon.com/energy-storage-systems
104Solutions

Energy storage systems

BMS – battery
protection

BMS Monitoring
and balancing

40 - 100 V

Benefits

40 - 300 V

OptiMOS™ and StrongIRFET™ SuperSO8, TOLL, TOLT, – High power density and system cost reduction
TO-220, D²PAK

600 V/650 V

CoolMOS™ CFD7
CoolMOS™ 8

TO-220/247, TOLL,
Q-DPAK

650 V

CoolSiC™ Schottky diodeTO-220, D²PAK,
D-DPAK

650 V

CoolSiC™ MOSFET

TO-247. D²PAK, TOLL*– Combination of high performance, high reliability, and600 V / 650 V

CoolGaN™ HEMTDSO-20/TOLL

650 V

TRENCHSTOP™ 5 H5/CoolSiC™ hybrid devices

TO-247– Ultra high-power density and efficiency– Conventional designs, high current operations

40 - 300 V

OptiMOS™ and StrongIRFET™ TOLL, TOLT, TO-220,
D²PAK

600 - 950 V

CoolMOS™ C7/P7

TO-247, Q-DPAK, TOLL

650 V

CoolSiC™ MOSFET

TO-247, D²PAK, TOLL*

650 V

TRENCHSTOP™ 7 H7TO-247, TO-247PLUS,
TO-247-HCC,
TO-247-asymetric(3 &4 pin)

600 V / 650 V

CoolSiC™ Schottky diodeTO-220, D²PAK,
D-DPAK

1200 - 2000 V

CoolSiC™ MOSFET

TO-247, TO-247-HCC

650 - 1200 V

TRENCHSTOP™ 7 H7TO-247, TO-247PLUS,
TO-247-HCC,
TO-247-asymetric(3 &4 pin)

200 V

EiceDRIVER™ 1EDN gate
driver

PG-SOT23-6/
PG-SOT23-5
WSON-6 / TSNP-6

650 V

EiceDRIVER™ 2EDR gate driver PG-DSO-14-WB

650 V

EiceDRIVER™ 2EDB gate driver PG-DSO-14-NB

2300 V

EiceDRIVER™ Compact
gate driver

DSO-8– Dual-channel reinforced (safe) isolated– Dual-channel functional isolated– Single-channel isolated driver with Miller clamp/sep-out

1200 V/2300 V EiceDRIVER™ Enhanced
gate driver

DSO-16– Single-channel isolated driver with DESAT and Miller clamp

60 - 200 V

TOLL, D²PAK– Minimize parallelization of MOSFETs– Market-leading MOSFETs with lowest RDS(on) enabling low

OptiMOS™ Linear FET

compact and easier design– Improved system efficiency and extremely fast switchingease of use– High power density and system cost reduction– Ease of use and fast design-in– Combination of high performance, high reliability and easeGate-driver ICs

of use– Best-in-class performance and controllability– Higher frequency and increased power density– Highest efficiency and increased power density– Best-in-class performance and controllability– Single-channel non-isolated

conduction losses

150 - 400 V

600 V

CoolMOS™ S7

TOLL, Q-DPAK--

Battery management IC(TLE9012DQU)

PG-TQFP-48

500-950 V MOSFETs

15-300 V MOSFETs– Highest efficiency, enabling increased power density/more

Digital isolators

10-100 kW

Package

IGBT discretes andsilicon power diodes

Power conversion < 10 kW
systems (PCS)

Product family– Widest SOA area with LinearFET™
– Lowest RDS(on) MOSFET– ASIL-D compliant– Cell balancing with integrated switches with up to 150 mAIntelligent powerswitches and modules

Power/battery Voltage classvoltage[VDS max]

Microcontrollers

Functional block

Applications

Highlight/recommended product portfolio

using external resistors to reduce chip power consumption– 12x delta-sigma ADCs ensure that the voltage of all cells is
measured synchronously– ISO UART includes an 8-bit CRC to ensure data integrity
until microcontroller register

PG-TQFP-48

Digital isolators--

ISOFACE™ digital isolators
2DIB/4DIR

PG-DSO-8-8
PG-DSO-8-16

Current sensors--

XENSIV™ - high-precision
coreless current sensors

PG-TISON-8

Auxiliary power
supply-650 - 950 V

CoolSET™

DSO-12

Microcontroller--

XMC™ families
XMC4000/XMC7000
PSoC™ 4

PG-VQFN-40
PG-VQFN-56
PG-TSSOP-16
PG-TSSOP-38

Memory--Serial SPI F-RAM
EXCELON™ F-RAM

PG-DSO-8

Security--

OPTIGA™ Trust family

PG-USON-10-2

Connectivity--

AIROC™ Wi-Fi + Bluetooth®
CombosWLBGA– UART to ISO UART communication– General purpose error pin– Support diagnosis feature– Isolated CAN/UART communication– Support diagnosis feature, general purpose error pin– High accuracy of current sensing– Noise robustness– Compact, robust, and easy to use solution

USB-C controllers
and peripherals

Battery management IC(TLE9015QU)

Power
management ICs-– 32-bit MCU subsystem– 48/144/350MHz Arm® Cortex®-M0+ CPU– Up to up to 8 MB flash– 32 kB SRAM
– Up to 2 CAN– USB/up to 4 serial channels– Zero-delay writes– 1014 read/write cycles– 10-year data retention at +85ºC temperature– 200x lower energy than EEPROM– No complex wear-leveling overheads– The OPTIGA™ Trust family includes turnkey products for

WBG semiconductors-

smaller platforms as well as programmable solutions

Sensors

BMS transceiver– High integration, quick implementation– It supports Wi-Fi 4, Wi-Fi 5

Click here to learn more:*Coming soon

Supportwww.infineon.com/energy-storage-systems
105

Solutions

Robotics

Key benefits– Complete ecosystem of simulations, documentation, and demonstration boards– Comprehensive portfolio of products and solutions– High reliability of components– Small form factor and compact design of components– Lowest RDS(on) of the transistors– Hardware-based security– Components authentication– Security market leader with a proven track record and outstanding partner– Faster time to market– Design flexibility– Prolonged product life spans– Reduction of overall system size and cost
– BOM savings– Trustworthy system solution– Highest system quality and ease of safety certification process

IGBT discretes andsilicon power diodes

Key features

Digital isolators

Features and benefits

PWM/PFCswitchSR switch

PWM/PFC
controllerSR
controller

ESD
Protection
Load switch

PFC diodeAux. supply

USB PDACPower management

Balancing FETBMS IC

Authentication

Precharge FET

Gate driver

BT / BLE®

DC-DC converter

PMIC
CHG and DSG FETGate driver

Microcontroller

Version: 6.7
27.02.2024 11:00

LDO

Small signal FET

MemoryESD protection diodeCAN TRX

Power bus
Navigation and environment sensing

Central control

Brushless DC motor control

Laser driver

3D IR-ToF sensor

Microcontroller

Integrated control and GD

Radar 24 GHz

Radar 60 GHz

CAN transceiver

MemoryPressure sensor

Microphone (array)

Ultrasonic sensor

3D magnetic sensor

GNSS

LNA

CAN TRXGate
driver (GD)

Controller
and MCE

Integrated GD and MOSFETs

UWB
MemoryHuman - machine interface (HMI)
3D magnetic sensor
MEMS microphone

Code storage NOR FlashLED driver IC

Audio amplifier

Optional components
Security

Peripheral controllers

CO2 sensor

RF transistor

Bias control

MOSFETs

Integrated control, GD, and MOSFETs

Position
sensor
BLDC
Motor

Data-logging RAM
Expansion RAM

Touch / CapSense
display

Other applications

M

Brushed DC motor control
Integrated control & GD
InverterGatedriver (GD)

MOSFETs

Controller
Integrated GD & MOSFETs

Speed
sensorBrushedDC Motor

Sensors

I/O expander

M

CAN TRX

Encryption andAuthentication

Click here to learn more:
www.infineon.com/robotics
www.infineon.com/community-robotics

www.infineon.com/imr

Support

IMU

Wireless connectivity
Wi-Fi, Bluetooth®, BLE
Cellular embedded SIM

3-PhaseInverter

USB-C controllers
and peripherals

Battery management systemPowermanagement ICs

Charger

The latest generation of domestic
robots, e.g., vacuum, lawn or poolrobots, provide a new level ofassistance and simplicity in homes
and professional environments. They
directly interact with humans, which
imposes unique design challenges,
especially in domestic environments.
Energy efficiency, long battery
life, security, sensing capabilities,
and intelligent mind are key touser-friendly and safe designs. By
choosing Infineon, you get a onestop semiconductor shop for all yourrobot design needs.

WBG semiconductors

Domestic robots - simplifying everyday life and work

Microcontrollers

Intelligent powerswitches and modules

network for embedded security

Structural system overview: domestic robots

500-950 V MOSFETs

Disruptive technologies have significantly changed our lifestyle in the past few decades. Now a new era is on thehorizon – the age of robots. Today’s robots can identify and navigate through surroundings, work alongside and eveninteract with humans. All this would not be possible without the recent advancements in semiconductor solutions.
Drawing on Infineon’s insights into all facets of the robotics field and with a comprehensive portfolio of power products
and sensors on offer, Infineon provides reliable system solutions that address the latest trends in robotics, whether it is
Artificial Intelligence, Internet of Things, smart home, cloud-based services, human-machine interface, or any roboticsrelated field.

Gate-driver ICs

Superior solutions for smart and safe robots

15-300 V MOSFETs

Applications

Robotics

106

Solutions

Robotics

CoolSIC™

CoolMOS™
Gate Driver

IGBT
Discretes

SECURITY
Secured Communication/ Authentication

IGBT
ModulesM

3-phase Inverter

CAN

OptiMOS™

CoolMOS™

CoolGaN™

CoolSIC™

WiFi & Bluetooth / BLE
USB

Current Sensor

MCU

EtherCATHall Latches /Angle Sensor

Human MachineInterface

LED Drivers

Current sensing
Position sensing

Connectivity
Digital I/O
Memory6-axis IMU

Radar sensors
Sensor Hub
Interface(MCU)

Push Button/
Capacitive sensing

Pressure Sensors
3D ToF
Camera Sensor

Other Sensors

Sensors

Intelligent powerswitches and modules

AC-DC

With the experience we gainedby serving industrial robot
manufacturers with the best systemsolutions for years, Infineon is well set
to provide the right fit products forthe next generations of collaborative
robots. Cobots, as they are shortly
called, work outside the limitation ofa safety cell, directly interacting withhumans. This setup requires a precise
set of design features, especiallyfor the sake of workplace safety.
With Infineon’s semiconductors for
cobot systems, you benefit fromthe expertise of an experienced andreliable partner.

MemoryMicrocontrollers

Mobile robots – driving production and automation forward
Structural system overview: Mobile robots (AGV, AMR)
Power distribution

Batteryauthentication

DC-DC

LDO

PMIC

ESD protection

Sensors
Mapping andmotion detection
3D IR ToF sensor

Mainsystemcontrol

Motor
drive
MCU

PWM

Gate
driver3-phaseinverter

M
BLDC Motor

includingsafety
XMC™

24 GHz and 60 GHz Radar

Motor sensing

CAN

MEMS microphone

Current sensor

PSoC™

Environmental sensing

Integrated option with
controller + gate driver:
IMD70xA

XMC™

Position sensor

Pressure sensor
CO2 sensor

PSoC™

MemoryHMIConnectivity

AURIX™
HMI controller

Wi-Fi and Bluetooth®
Audio amplifier
Bluetooth® & BLE
LED driver
Cellular

Securedcommunication /authentication

Sensors

Industrial I/O

Brushless motor (BLDC)

Power supply

Autonomous mobile robots (AMRs)
are a self-driving force behind
automated processes and offer
the highest degree of flexibility
within working environments due
to battery-powered systems. With
its complete product portfolio
for robotics applications- fromthe power supply to motor drives
and sensors for navigation andenvironment scanning -Infineon
makes it possible for mobile robots
to find their way through nearly allenvironments.

USB-C controllers
and peripherals

Wireless charging

Battery
management
system (BMS)Power
management ICs

Battery

Battery charger

WBG semiconductors

ChargerAC

500-950 V MOSFETs

Digital Isolator
ISOFACE™

Gate-driver ICs

Manipulator

Power Supply & Management

Digital isolators

Controller

IGBT discretes andsilicon power diodes

Structural system overview: industrial robots and cobots

15-300 V MOSFETs

Applications

Industrial robots and cobots – advance through collaboration

Click here to learn more:
www.infineon.com/imr

Supportwww.infineon.com/robotics
www.infineon.com/community-robotics

107

Mobile robots (AMR, AGV)

Domestic robots

200- 500 W
24 V – 48 VDC

10 – 100 W
12 V - 36 VDC

60 – 100 V OptiMOS™ and
60 – 150 V OptiMOS™ andStrongIRFET™
StrongIRFET™
Recommended packages:
Recommended packages:
PQFN 3 x 3 (space savings)
PQFN 3 x 3 (space savings)
Super SO8 (price/performance)
Super SO8 (price/performance)
TOLL (high current)
TOLL (high current)
100V CoolGaN™ IGC033S10S1
100V CoolGaN™ IGC033S10S1
1200V single-channel isolated
650 V half-bridge: 2EDF9275F,
600 V half-bridge: IRS21867S, IRS2186S
Compact: 1ED31xx and 1ED-MF
2EDF7275F, 2EDF7175F,
200 V half-bridge: IRS2005S, IRS2007S, IRS2008S, 2EDF7275K
2ED2304S06F, 2ED2182S06F,
200 V three-phase: 6EDL04N02
1200 V single-channel isolated
160 V three-phase: 6ED2742S01
Enhanced: 1ED34xx and 1ED-F2
650 V high-side: 1EDB8275F,
200 V high-side: 1EDN7550B & 1EDB8550B
1EDB9275F, 1EDB6275F
160 V half-bridge: 2ED2748S01G, 2ED2738S01G
1200 V half-bridge IR2214SS 1200 V
120 V half- bridge: 2EDL8124G
three-phase: 6ED2230S12T
650 V three-phase: 6EDL04N06PT
60 V three-phase programmable: 6EDL7141
25 V low-side: 1ED44173N01B, IRS44273L
PSoC™: single-core Arm® Cortex®-M4F PSoC™ 61, dual-core Arm® Cortex®-M4F and M0+ PSoC™ 62
XMC™: Arm® Cortex®-M0 XMC1000 family, Arm® Cortex®-M4F with EtherCAT™ XMC4300 / XMC4800, Arm® Cortex®-M7 & M0+ XMC7000 family
AURIX™: TriCore → TC337
2DIB0410F
ISO1I813T, ISO1H816G
XENSIV™ TLx496x

Current sensor

XENSIV™ TLI4971

Angle sensor

XENSIV™ TLE/TLI5012B, TLE5014SP
XMC™: Arm® Cortex®-M0 XMC 1000 family, Arm® Cortex®-M4F XMC4000 family
PSoC™: single-core Arm® Cortex®-M0 / M0+ PSoC™ 4,
single-core Arm® Cortex®-M4F and dual-core Arm® Cortex®-M4F & M0+ PSoC™ 6
EZ-PD™ PMG1-B1 High Voltage MCU
100 OptiMOS™. e.g.,
30 V – 80 V LinearFET™ Gen.2
LinearFET IPT017N10NM5LF2
OptiMOS™, StrongIRFET™
StrongIRFET™ 2: IPT017N10NF2S
BSC007N04LS6, IRL40T209, IRFS7430
20 V or 30 V N/P MOSFETS in SOT23, TSOP6 or SOT363 dual-channel

Protection switches
Balancing switches(small signal)
Monitoring and balancing IC

OPTIGA™ Authenticate S

XENSIV™ MEMS microphones: analog or digital interface, SNR 68 to 73 dB(A)Other sensors

Pressure sensor: XENSIV™ DPS368 (e.g., airflow control), DPS368 (e.g. airflow control, tactile)
CO2 Sensor: XENSIV™ PAS CO2
CYW43439 (1x1 2.4GHz Wi-Fi 4)
CYW4373 (1x1 dual-band Wi-Fi 5)
CYW55571 (1x1 Tri-band Wi-Fi 6)
CYW55571 (1x1 Tri-band Wi-Fi 6E)
PSoC™ 4000 - entry-level
PSoC™ 4100 - more touch buttons
PSoC™ 4700 - inductive sensing
PSoC™ CAPSENSE™ family
Single / dual-core Arm® Cortex®-M7 and M0+ XMC7000

HMI - Touch sensing

Main control MCU
Security

Authentication and protection OPTIGA™ Trust M, OPTIGA™ TPM

MemoryNOR flash

S25FL-L serial NOR flash memories Densities 64 MB to 256 MB

OthersVoltage regulator

DC-DC voltage regulator 12 V/5 V or 3.3 V, watchdog, error monitoring, safe state control, BIST, etc.

LED Driver

Driving currents from 10 mA to 250 mA – linear driver ICs: BCR3xx, BCR4xx
Support currents from 150 mA to 3 A – DC-DC switch-mode: ILD4xxx, ILD6xxx

Click here to learn more:

www.infineon.com/robotics
www.infineon.com/community-robotics

XENSIV™ Real 3™ 3D ToF:
Hybrid ToF IRS2875C
XENSIV™ VCSEL Driver: IRS9100C,
IRS9102C

Power
management ICs

XENSIV™ 60 GHz: BGT60LTR11 / BGT60UTR11AIP, BGT60TR13CXENSIV™ 24 GHz: BGT24LTR11N16, BGT24LTR22XENSIV™ REAL3™ 3D image sensor: IRS1125A, IRS2877AS (functional safety ISO26262)
XENSIV™ VCSEL Driver: IRS9100C, IRS9102C

MEMS microphones

Wi-Fi + Bluetooth®

USB-C controllers
and peripherals

TLE9012AQU (sensing IC), TLE9015QU (transceiver IC)

Battery authentication

Connectivity and humanmachine interface (HMI)

Microcontrollers

Microcontroller (MCU)

Sensing (e.g., ranging, room Radar
mapping, localization,
collision avoidance, HMI, air ToF (Time-of-Flight)
3D image sensors
quality, tactile)

25 – 60 V OptiMOS™ andStrongIRFET™ single- and dualchannel MOSFETs
Recommended packages:
S08 Dual MOSFET (integration)
PQFN 3 x 3 (space savings)
SSO8 (price/performance)

WBG semiconductors

ISOFACE Digital Isolators
ISOFACE Isolated
Industrial Interface
Hall switchArm® Cortex®-M0: XMC1100 or XMC1300
Arm® Cortex®-M4: XMC4200
EZ-PD™ PMG1 High voltage MCU with USB-C and PD
1200 V IGBT 7 S7 1200 V CoolSiC™
600V/650V CoolMOS™
MOSFET 1200 V CoolSiC™ Easy1B
650 V and 1200 V CoolSiC™
ModuleCoolGaN™ GIT HEMT 600 V
600 V/650 V/1200 V TRENCHSTOP™
600 V EasyPIM™ and EasyPACK™
600 V CIPOS™ (full integration)

Sensors

Microcontroller (MCU)

20-300 V MOSFETs

low-side single-channel: 1EDN7550B, 1EDN8550B, 1ED44175N01B, 1ED44173N01B
low-side dual-channel: 2ED24427N01F, 2EDN7523G
1200 V single-channel isolated:
650 V half-bridge:
1ED3124MU12F, 1EDI60N12AF
2EDF9275F, 2EDF7175F,
2ED2304S06F, 2ED2182S06F,
2ED2110S06M
650 V high-side:
1EDB9275F, 1EDB6275F, 1EDB8275F
ISO1I813T, ISO1H816G
2DIB0410F

600 V/650 V CoolMOS™
650 V CoolSiC™
20 V - 200 V OptiMOS™ andStrongIRFET™
CoolGaN™

500-950 V MOSFETs

650 V CoolSiC™ Schottky diode

Gate driver
EiceDRIVER™ family

600 V/650 V CoolMOS™
650 V CoolSiC™
20 V - 200 V OptiMOS™ andStrongIRFET™
CoolGaN™

Gate-driver ICs

PFC power diodes

Power switch

600 V/650 V CoolMOS™
650 V CoolSiC™
20 V - 200 V OptiMOS™ andStrongIRFET™
CoolGaN™

Digital isolators

650 V and 1200 V CoolSiC™ MOSFET
600 V/650 V IGBT HighSpeed 5
650 V IGBT TRENCHSTOP™ 7 IGBT7 T7 and H7
650 V and 1200 V EasyPACK™ Module

Gate driver
EiceDRIVER™ family

Battery
management system (BMS)

Cobots100 – 1000 W
1-phase 110 V-220 VAC/48 VDC BusPower switch

ISOFACE Digital Isolators
ISOFACE Isolated
Industrial Interface
Microcontroller (MCU)
Motor control and drive< 5 KW
1-phase 110 V-220 VAC

www.infineon.com/imr

SupportPower supply and charger> 5 KW3-phase 400 VAC

IGBT discretes andsilicon power diodes

Industrial robots

Common system power
Common operating/battery voltage

Intelligent powerswitches and modules

Recommended products

Applications

Solutions

Robotics

108

Solutions

Robotics

Applications

Robotics development platform

15-300 V MOSFETs

Infineon’s system solutions for Robotics
Get a head start on developing your robot with Infineon’s robotics development platform, powered by ourstate-of-the-art hardware and software.

500-950 V MOSFETs

The Infineon Mobile Robot, or IMR for short, is a robotics development platform that demonstrates the latest robotics
application that Infineon offers. Whether you are shopping for one specific sub-system/functional block or looking tobuild an entire system with Infineon, we have you covered with our powerful, convenient, and efficient hardware andsoftware solutions. The windows below will help guide you to the information most helpful for your expertise level.
Visit www.infineon.com/community-robotics for more information.

– Wide variety and flexibility of system designs– Easy integration– Ease the process for safety certifications– Simplify procurement process– Reduced development time and therefore faster time to market

Digital isolators

Key benefits– Broad product portfolio– System solutions– Reliability and safety– One stop shop
– Software

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Key features

Gate-driver ICs

Features and benefits

Part number
DEMO_IMR_MAINCTRL_V1

Power distribution

DEMO_IMR_PWR_V1

Motor control and angle sensing

DEMO_IMR_MTRCTRL_V1
DEMO_IMR_ANGLE_SENS_V1

Battery management system

DEMO_IMR_BMSCTRL_V1
DEMO_IMR_BMSPWR_V1

Time-of-Flight sensor

Hybrid Time of Flight (hToF)

60 GHz Radar

KIT_CSK_BGT60TR13C

DEMO_IMR_MAINCTRL_V1

DEMO_IMR_PWR_V1

DEMO_IMR_ANGLE_SENS_V1

DEMO_IMR_MTRCTRL_V1

DEMO_IMR_BMSCTRL_V1

DEMO_IMR_BMSPWR_V1

SupportSensors

Main control

WBG semiconductors

Product familyPowermanagement ICs

Fast and efficient robot designs with leading technologies and a broad product portfolio to choose from

KIT_CSK_BGT60TR13C

Hybrid Time of Flight (hToF)

Click here to learn more:
www.infineon.com/robotics
www.infineon.com/community-robotics

www.infineon.com/imr
109

Applications

Solutions

Robotics

Application diagram
Infineon Mobile Robot (IMR)

Motor Control - FOC

2x Power Distribution modules can be inserted into IMR
to increase output channels for powering the required payloads

GL60/KV25
24V/1.43A
0.6Nm

M

IMD701A

TLI5012B E1000

TLE9351BVSJIRLML6401

15-300 V MOSFETs

ISZ053N08NM6

Power Distribution: 6x 5 VOUT

Motor Control - FOC
ISZ053N08NM6

hToF Module
TLE9351BVSJ

2ED4820-EM
IPT010N08NM5
ISC035N10NM5LF2
TLE9012

ILD8150E
TLS208D1EJVTLS205B0EJV33

LED Module RGB

USB3

XMC4700F100K2048

CYUSB3064-BZXC

5V

CAN

ISZ053N08NM6

TLS205B0EJV33

IMD701A

TLI5012B E1000

TLE9351BVSJIRLML6401

Radar Module

IRS9102CCYW43012

VCSEL 2xBGT60TR13C

Motor Control - FOC

CY8C624AFNI-S243T

2x hybrid ToF cameras can be
integrated into IMR to provide
more visibility and therefore
more accurate SLAMSLS32AIA010MK

DPS368

ISZ053N08NM6

MemorySensorConnectivity

GL60/KV25
24V/1.43A
0.6Nm

IMD701A

TLI5012B E1000

TLE9351BVSJIRLML6401

USB

Microcontroller

M

Security IC

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

Transistor, Power IC, Voltage regulator

GL60/KV25
24V/1.43A
0.6Nm

M

TLE9351BVSJ

Hybrid ToF camera(can be replaced with Wireless Charger)

IRLML6401

Main Control

6-core Arm Cortex A78AE 2 GHz
32 Tensor cores 35-70 TOPS

Li-Ion battery charger

TLE9351BVSJ

Motor Control - FOC

CYW55573

IRS2875CTLI5012B E1000

XMC1404-Q048X0200

Jetson Orin NX 8GB DevKit

2x BMS modules can be inserted into IMR
to allow hot-swap and increase overall capacity

IMD701A
12x

TLE9351BVSJ

2.4 & 5 GHz& 6 GHzPSU 48 VIN
7-20 VOUT

12S Li-NCA BMS Hot-Plug

Click here to learn more:
www.infineon.com/robotics
www.infineon.com/community-robotics

www.infineon.com/imr

Support

VBAT

GL60/KV25
24V/1.43A
0.6Nm

M

CY8C6245AZI-S3D72

TLI4971-A025T5

500-950 V MOSFETs

XDPE12254C-0000
TDA21490
BTS71033-6ESA

Gate-driver ICs

ILD8150E
TLF1963TE
TLS208D1EJVTLS208D1EJV33

Digital isolators

BSD235N
IRLML6401

XMC1404-F064X0200

IGBT discretes andsilicon power diodes

CY15B256Q-SXA

TLE9351BVSJ

110

Solutions

Light electric vehicles
and electric forklift

Applications

Light electric vehicles and electric forklift

15-300 V MOSFETs

eBike, eScooter, eMotorcycle, eRickshaw, eMicroCar, eForklift

Gate-driver ICs

500-950 V MOSFETs

As a leader in power semiconductors, Infineon strives to enable the most efficient, reliable, and smart solutions forthe e-Mobility, Minimobility, and Micromobility markets. Keeping up with the latest market trends worldwide, Infineon
prepares for the ramp-up of all forms of light electric vehicles (LEVs):‒ Micromobility: electric bicycle (e-bike), electric kick-scooter‒ Electric powered 2/3 wheelers (EPTW): e-moped, e-scooter, e-rickshaw, e-motorcycle‒ MicroEV: electric microcars, low-speed electric vehicles (LSEV), neighborhood EV (NEV), electric quadricycle‒ Other electric transporters (e.g., e-forklift, e-golf cart, e-ATV) with less than 200 V batteries

IGBT discretes andsilicon power diodes

Digital isolators

Contrasting to automotive (passenger car) requirements, L-category (light) vehicles require different sets of safety andqualification standards. For example, the newest motorcycle standards place more responsibility on the operator thanthe vehicle itself to mitigate risks. Infineon considers mission profiles of different applications and offers suitable nonautomotive and automotive components for this wide range of use cases.
Unlike traditional vehicles with internal combustion engines, these vehicles are powered by battery technology with bus
voltage ranging from 28 V to 168 V. The commonalities among these different types of LEVs are motor inverters/drives,
battery management systems, battery chargers/battery charging stations/battery swapping stations. Additionally, LEVs
house increasingly popular smart features and electronics, which are possible due to their larger battery sizes.

Key benefits– Leading power MOSFET technology– Track record of reliability and quality– Complete portfolio for driver, microcontroller, and sensors– Broad connectivity products compliant with various standards– Complete design support with simulations, documentation, and demonstra-– Highest power density and increased range– Prolonged lifetime and low failure rate
– One-stop shop for designers– Enabling smart features– Faster time-to-market

tion boards for high-end solutions

Microcontrollers

Key features

Intelligent powerswitches and modules

Features and benefits

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Application diagram

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Applications

SolutionsLight electric vehicles
and electric forklift

6 kW motor drive with 96 V battery voltage
Topology
3-phase half-bridge (B6)

Product category

Product familyPart number

LV MOSFETs

OptiMOS™

IPT025N15NM6

Microcontrollers MSIL-relevant

AURIX™

SAK-TC334LP-32F200F MSIL-readyGate driver MSIL-relevant

EiceDRIVER™

2EDB8259F

Position/speed sensor MSIL-relevant

XENSIV™

TLE5501 E0002

Current sensor MSIL-relevant

XENSIV™

TLE4973-AE35S5 MSIL-ready15-300 V MOSFETs

Functional block
Motor drive

500-950 V MOSFETs

For additional configurations, please refer to High power low voltage drives.

Swappable 48 V 1.2 kWh battery
Product familyPart number

OptiMOS™

IPTC015N10NM5

LV MOSFETs (discharge)

OptiMOS™

IPTC015N10NM5

LV MOSFETs (pre-charge)

OptiMOS™

BSC070N10NS5

Microcontrollers MSIL-relevant

PSoC™

CY8C4146/7AZI-S463

Gate driver MSIL-relevant

EiceDRIVER™

2ED4820 MSIL-ready

Current sensor MSIL-relevant

XENSIV™

TLE4972 MSIL-ready

Cell balancing IC MSIL-relevant

TLE9012

TLE9012 MSIL-readyMemory (RAM)NOR flash

S25FL256LAGMFB001

Bluetooth®

AIROC™

CYW20719B1KUMLG

Security

OPTIGA™ Authenticate S

SLE95401TSNP6XTSA1

Gate-driver ICs

Product category
LV MOSFETs (charge)

Digital isolators

Topology
Back-to-back with pre-charge

IGBT discretes andsilicon power diodes

Functional block
BMS

For additonal configurations, please refer to Battery management systems.

CCM boost PFC

Resonant FB LLC

HB SR
QR flyback

Product category

Product familyPart number

HV switch

CoolMOS™ P7

IPP60R060P7

PFC diode

CoolSiC™ G6

IDH12G65C6Gate driver IC

EiceDRIVER™

1EDB8275F

Controller IC

ICE3x family

ICE3PCS01G

HV switch

CoolMOS™ P7

IPP60R160P7

Gate driver IC

EiceDRIVER™

2EDS8265H

Digital controller

XMC™ Industrial MCU

XMC4200-F64k256BA

Digital isolator

ISOFACE™

4DIR1400H

MV switch

OptiMOS™ 6

ISC060N10NM6

Gate driver IC

EiceDRIVER™

2EDF7275F

Aux power controller

CoolSET™

ICE5QR2280G

Microcontrollers

Battery charger

Topology

USB-C controllers
and peripherals

Functional blockIntelligent powerswitches and modules

3 kW 48 V battery charger

Powermanagement ICs

For additional configurations, please refer to Battery chargers.

250 W off-board charger
Battery charger

Topology
CrCM PFC

Product category

Product familyPart number

Controller IC

XDP™

XDPS2222

HV switch

CoolMOS™ P7

IPP60R060P7

Hybrid flyback

HV switch

CoolMOS™ P7

IPA60R160P7

Active SR

MV switch

OptiMOS™ 5

BSC160N15NS5

QR flyback

Aux power IC

CoolSET™

ICE5QR2280G

WBG semiconductors

Functional block

Sensors

For additional configurations, please refer to Battery chargers.

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Solutions

On-board charger
for xEV applications

High-voltage DC-DC converter
The architecture of electric vehicles comprises at least one low-voltage sub-network with low-voltage energy storageand multiple electrical loads and one high-voltage sub-network with high-voltage energy storage. The auxiliary HV/LV
DC-DC converter enables the bidirectional energy flow between these two electrical subnets. Typical design challenges
are achieving the greatest possible efficiency and controlling overall system costs. The space required for the DC-DC
converter should also be kept to an absolute minimum. Infineon’s portfolio is specially designed to help overcome
these barriers easily.

Current
sensorGate driver

Microcontroller

CAN

Current
sensorGate driver

PMIC

CAN

GP I/O

Wirelessconnectivity

Safety Control
Microcontroller

Current
sensorSecondary side
H-Bridge
switches

Current
sensorFilterGate driver

Microcontroller

PMIC

Other Subsystems

Primary side
H-Bridge
switches

Secure communication /authentication

HV LV DC/DC
Current
sensorCurrent
sensorGate driver

Microcontroller

500-950 V MOSFETs
Gate-driver ICs
Digital isolators
SensorsCAN

H-Bridge
switches

Secondary side
H-Bridge
switches

Back to backswitches

Gate driver

Gate driver

CAN

PMIC

SupportGrid AC Filter

HV HV DC/DC

Primary side

3 phases/
Current
4 phasessensorbridge switches

WBG semiconductors

PFC
Current
sensorPowermanagement ICs

HV/LV DC-DC converter: functional blocks

IGBT discretes andsilicon power diodes

All plug-in hybrid electric vehicles (PHEV) and pure electric cars are equipped with at least one on-board charger, allowing
battery recharge from any standard AC power outlet. Available power depends on regional regulations and installationbase, typically providing up to 11 kW for PHEVs and up to 22 kW or even 44 kW maximum power for pure electricalvehicles. System designers face the challenge of supporting varied voltage and current levels while increasing
power density efficiency under cost optimizations for strong solutions. The key success factors regarding on-board
charging involve efficiency and a high power density for a small form factor. The long-term trend is moving towards
bidirectional charging, where the charger feeds power from the car to the homes, smart grid, and smart loads.

Intelligent powerswitches and modules

On-board chargers

Microcontrollers

The electrification of the powertrain enables local emission-free mobility and driving pleasure. The car becomes a partof the energy ecosystem, with smart charging from renewables, efficient driving with electrified mobility and futureenergy use cases with V2X. Infineon offers complete and complementing chipsets to develop modular and scalable onboard battery chargers (OBC) and DC-DC units. Leveraging our expertise in power electronics and semiconductors, oursolutions use Si, SiC, and GaN power technologies. They are designed to meet the high quality and safety standards inautomotive applications. Wide-band gap (WBG) semiconductors enable future optimizations and highly contributes tosustainable solutions.

USB-C controllers
and peripherals

Best solutions for electrified powertrain in xEV applications:on-board chargers and HV/LV DC-DC converter

15-300 V MOSFETs

Applications

On-board charger for xEV applications

Click here to learn more:
www.infineon.com/emobility
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113

Automotive products for on-board charger units
IPx65RxxxCFD7A

650 V MOSFETs with integrated fast body diodeAIKW50N, AIKW40N, AIGW40

IGBT discrete dedicated to automotive applications

TRENCHSTOP™ 5 Hybrid Discrete IGBTAIKW50N65RF5

IGBT and SIC discrete dedicated to automotive applications offering higher performance

CoolSiC™ 750 V

AIMx750RxM1H

Automotive 750 V discrete SiC MOSFET in TO247, Q-DPAK, D2PAKCoolSiC™ 1200 V

AIMW120Rx , AIMCQ120Rx,
AIMBG120Rx, AIMZH120Rx

Automotive 1200 V discrete SiC MOSFET in TO247, Q-DPAK, D2PAKCoolGaN™ 650V

IGLT65R0xx*, IGDQ65R0xx*

Automotive qualified GaN power transistors in TOLT and Q-DPAK

EiceDRIVER™ gate driver for Si, IGBT

2EDB7259Q1, 2EDR825xQ1,
2EDB9259Q1

Automotive gate driver for high-voltage silicon MOSFETs and IGBTs

EiceDRIVER™ gate driver for SiC

1EDR3147HQ1, 2EDR3143/7XA

Automotive gate driver optimized for 750 V and 1200 V SiC

EiceDRIVER™ gate driver for LV Si

2EDN7534FQ1 , 2EDBx259KQ1,
2EDFx259KQ1

Automotive gate driver for secondary side of the HVLV DCDC converter

EiceDRIVER™ gate driver for GaN

2EDR7259XQ1, 2EDB7259YQ1

Automotive gate driver for HV GaN automotive switches

AURIX™ microcontroller

TX36x*, TC37X* , TC4X*

32-bit lockstep microcontroller optimized for power conversion

OPTIREG™ PMICTLF35584, TLF35585

ISO 26262 – system-supply optimized for AURIXTM

CAN FD transceiver

TLE9350, TLE9351, TLE9252

High-speed automotive CAN transceiver with 5 Mbps

OPTIREG™ SBC

TLE9461, TLE9471

High integrated solution for microcontroller supply and communication

OPTIREG™ linear and switcher

TLS810, TLS820, TLS850, TLS4120

Automotive linear and DCDC voltage regulators

XENSIV™ current sensor

TLE4971-3 , TLE4978*

Coreless magnetic current sensors for automotive

Digital isolators

650 V CoolMOS™
TRENCHSTOP™ 5 IGBT

Gate-driver ICs

Description

IGBT discretes andsilicon power diodes

Part numberIntelligent powerswitches and modules

Product family

650 V CoolMOS™ Easy module

F4-35MR07W1D7S8_B11/A*

650 V MOSFET in H-bridge configuration with integrated capacitor inEasy 1B package

650 V CoolMOS™ Easy module

F4-35MR07W2D7S8_B13/A*

650 V MOSFET in H-bridge configuration with IGBT H5,
rapid diode & integrated capacitor inEasy 2B package

650 V CoolMOS™ Easy module

F4-xxMR07WxD7_Bxx/A

650 V MOSFET in H-bridge configuration inEasy package

650 V CoolMOS™ Easy module

FSxxMR07WxD7_Bxx/A

650 V MOSFET in SixPACK configuration inEasy package

650 V CoolMOS™ Easy module

FFxxMR07WxD7_Bxx/A

650 V MOSFET in half-bridge configuration inEasy package

1200 V CoolSiC™ Easy module

F4-xxMR12WxM1H_Bxx/A

1200 V SiC MOSFET in H-bridge configuration inEasy package

1200 V CoolSiC™ Easy module

FSxxMR12WxM1H_Bxx/A

1200 V SiC MOSFET in SixPACK configuration inEasy package

1200 V CoolSiC™ Easy module

FFxxMR12WxM1H_Bxx/A

1200 V SiC MOSFET in half-bridge configuration inEasy package

USB-C controllers
and peripherals

Description

Powermanagement ICs

Part number

Microcontrollers

Modules for on-board charger units
Product family

15-300 V MOSFETs

Various technology offerings from Si/IGBT to SiC and GaN enable high customer scalability, from cost-efficient to highly
power-dense and highly efficient systems. The complete portfolio further simplifies designs enabled by Infineon solutions;thus, our optimized gate driver, current sensors, safe and highly scalable microcontroller, and PMIC solutions round up thecomplete offering and make OBC and DC-DC designs easy to select an scale according to customer needs.

500-950 V MOSFETs

Product portfolio for on-board charger and HV/LV DC-DC applications
Infineon’s comprehensive portfolio of semiconductors (sensors, microcontrollers, power semiconductors, etc.) lends itself
perfectly to designing compact units for on-board chargers and DC-DC converters. Infineon power transistors support
high-switching frequencies at the lowest possible on-state resistance (RDS(on)) to enable compact and efficient designs.

Applications

SolutionsOn-board charger
for xEV applications

WBG semiconductors

Get more information about our state-of-the-art demo kits here:
www.infineon.com/cms/en/product/promopages/wbg-for-obc

Sensors

For more information about off-board chargers, refer to the Fast/wireless EV-charging chapter.

Click here to learn more:* Coming soon

Supportwww.infineon.com/emobility
www.infineon.com/obc
114

Solutions

On-board charger
for xEV applications

Applications

Wide-bandgap demo kits

15-300 V MOSFETs

Tiny on-board charger
SiC-based real demonstrator 3.6 kW/LHigh power density 10 kW
GaN-based demonstrator

Digital isolators

Gate-driver ICs

500-950 V MOSFETs‒ 7.0 kW bidirectional OBC‒ Integrated HVLV DC-DC with 2.4 kW‒ 97.5% peak total efficiency‒ 98.5% peak DC-DC efficiency‒ 99.0% peak PFC efficiency‒ Top-side cooling power

Measurements:
400 mm x 140 mm x 17.8 mm

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes‒ Wide EV battery voltage range‒ Winde input range‒ AC/DC: 3-Φ Vienna Rectifier‒ 550 kHz: CoolGaN™ GIT +‒ Novel Synergetic Control: 1/3 PWM‒ DC/DC: 4x dual-active bridges (DABs)‒ 140...270 kHz: CoolGaN™ power transistor

Click here to learn more:
Supportwww.infineon.com/emobility
www.infineon.com/obc
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Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules
Microcontrollers

Products

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals‒ 15-300 V MOSFETs‒ 500-950 V MOSFETs‒ Gate-driver ICs‒ Digital Isolators‒ Discrete IGBTs and silicon power diodes‒ Intelligent power switches and modules‒ Microcontrollers‒ USB-C controllers and peripherals‒ Power management ICs‒ Wide bandgap semiconductors‒ XENSIV™ sensor technologies for automotive, industrial and consumer applications‒ Infineon powerful support

Click here to learn more:
www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

Supportwww.infineon.com/smps
www.infineon.com/xxxxxxx

116

Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules
Microcontrollers

20-300 V MOSFETs

Power
management ICs
WBG semiconductors- Technology development and product family
positioning‒ Guidance for applications and voltage classes‒ Space-saving and high-performance packages‒ Discrete packages‒ OptiMOS™ 7 15 V
‒ OptiMOS™ 7 40 V
‒ OptiMOS™ Scalable Power Block‒ StrongIRFET™ 2 MOSFETs –30 V/40 V/60 V/80 V/100 V
Dear users!
‒ OptiMOS™ Linear FET‒ OptiMOS™ 6 120 V‒ OptiMOS™ 6 135 V and 150 V‒ OptiMOS™ 6 200 V‒ OptiMOS™ 40 V in PQFN 8x6‒ Small-signal/small-power MOSFETs -250 to 600 V‒ OptiMOS™ power MOSFETs 15 -150 V Source-Down‒ OptiMOS™ PD‒ TOLx family‒ Product portfolio‒ Nomenclature

Sensors‒ 15-300 V MOSFETs N-channel power MOSFETs

USB-C controllers
and peripherals

15-300 V MOSFETs

Our customers are at the heart of everything we do. Please give us feedback
on how we can improve to meet your expectations with this document the best.

Click here to learn more:
www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

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117

Foundationof the Villach siteIR’s HEXFET™ power MOSFET
introduced which later enables
rapid commercialization of SMPS

1999

1997

1978

IR introduces
DirectFET™ power MOSFET
which reshapes packaging
technology.

Foundation of Infineon

CoolMOS™ revolutionizes
energy efficiency

IR introduces Planar
MOSFET technology

2006

2009

2011

2015

1st OptiMOS™ medium-voltage (100 V)
entered the market

Expansion of OptiMOS™
portfolio up to 300 V

Worldwide first power
semiconductors on a
300 mm wafer in Villach.

Infineon and IR:a powerful combination

2023

2021

Infineon introduces thefirst innovative 60 - 100 V
Needle Trench cell technology

Production start of new
300 mm Power Fab in Villach

500-950 V MOSFETs
Sensors

WBG semiconductors

Powermanagement ICs

2002

IGBT discretes andsilicon power diodes

1976

Intelligent powerswitches and modules

Eric Lidow and his father, Leon Lidow,
founded International Rectifier (IR)in 1947 with just six employees inInglewood, CA

1970

Microcontrollers

In 1946 a laboratory for basic
semiconductor research wasestablished - The foundation stone
for Infineon Technologies was set.

1947

USB-C controllers
and peripherals

1946

Digital isolators

With more than 40 years of experience in power MOSFET innovation, Infineon has led the way in solving the challenges
design engineers face on a daily basis while enabling them achieve their targets. Although these targets may havechanged over the years, the innovative spirit behind Infineon’s product offering has persisted – from device design,technology, package and product development through manufacturing. Looking at the evolution of MOSFETs in theindustry, numerous advancements in MOSFET technology have enabled the applications and trends that have become
an indispensable part of our lives. Infineon power MOSFET innovation has proven that optimization at the component
level brings significant system-level performance advantages and contributes to an easier, safer and greener future.

Gate-driver ICs

Infineon shapes power for
growth through MOSFET innovation

15-300 V MOSFETs

Applications

Solutions

History of power MOSFETs

Click here to learn more:
www.infineon.com/optimos6
www.infineon.com/optimos7

www.infineon.com/strongirfet2
www.infineon.com/smallsignal

Supportwww.infineon.com/powermosfet-12V-300V
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118

Applications

Solutions

OptiMOS™ and StrongIRFET™

OptiMOS™ and StrongIRFET™

15-300 V MOSFETs

15-300 V N-channel power MOSFETs

500-950 V MOSFETs

Infineon’s semiconductors are designed to bring greater efficiency, power density, and cost-effectiveness. The fullrange of OptiMOS™ and StrongIRFET™ power MOSFETs enables innovation and performance in applications such as
switch mode power supplies (SMPS), battery powered applications, motor control, drives, inverters, and computing.

Gate-driver ICs

Infineon’s highly innovative OptiMOS™ and StrongIRFET™ families consistently meet the highest quality andperformance demands in key specifications for power system designs such as on-state resistance (RDS(on)) and figureof merit (FOM).

Digital isolators

OptiMOS™ power MOSFETs provide best-in-class performance. Features include ultra low RDS(on), as well as low charge
for high switching frequency applications. StrongIRFET™ power MOSFETs are designed for drives applications and are
ideal for designs with a low switching frequency, as well as those that require a high current carrying capability.

Robust and excellent price/performance ratio‒ Optimized for switching frequency < 100 kHz‒ Designed for industrial applications‒ High current carrying capability‒ Rugged siliconBest-in-class technology‒ Optimized for broad switching frequency‒ Designed for high performance applications‒ Industry's best figure of merit‒ High efficiency and power density

for switching frequency <100 kHz

Active(price/performance optimized)
OptiMOS™

for broad switching frequency› Low RDS(on)StrongIRFET™
StrongIRFET™ 2› Rugged75-100silicon
V and broad portfolio selection 80-100 V› Industry‘s best Figure of Merit (FOM)› High efficiency and power density

Active and preferred (high-performance optimized)
80/100/150 V

OptiMOS™ 7
15 V

IR MOSFET™
100-300 V

40 V

OptiMOS™
OptiMOS™3 5
75/120 V

40 V

100 V

25 OptiMOS™
V / 30 V
40
6 V / 60 V

120 V

135 V

80 V / 100 V

160 V

200 V

40 V/100 V

OptiMOS™
25-60 VWBG semiconductors

Active (price/performance optimized)

IR MOSFET™
20-250 V

150 V

OptiMOS™ 5
25-60 V

OptiMOS™
25-60 V

Active (price/performance optimized)

StrongIRFET™
80-100 V

OptiMOS™
80/100/150 V OptiMOS™ 6

Power
management ICs

StrongIRFET™StrongIRFET™
20-300 V
20-300 V

IR MOSFET™
20-300 V

OptiMOS™ 3
200-300 V
OptiMOS™ 5

Active and preferred (high-performance optimized)

StrongIRFET™ 2
30 V / 40 V / 60 V / 80 V / 100 V

Active and preferred(high-performance optimized)

USB-C controllers
and peripherals

ActiveActive and preferred(price/performance
optimized)(high-performance optimized)
StrongIRFET™
and IR MOSFET™

Intelligent powerswitches and modules

OptiMOS™

Microcontrollers

StrongIRFET™

IGBT discretes andsilicon power diodes

Technology development and product family positioning

OptiMOS™ 3

OptiMOS™
80 V / 100 V / 150 V

25 V / 120 V

200-300 V

Logic Level MOSFETs

OptiMOS™ Linear FET

Click here to learn more:

OptiMOS™ Fast Diodewww.infineon.com/powermosfet-12V-300V
www.infineon.com/optimos-strongirfet-packages
Package portfolio

Low-voltage
General Purpose MOSFET

www.infineon.com/optimos6
www.infineon.com/optimos7

Click boxes to learn more!

MOSFETs for high-power
motor drive
High-performance Duals

www.infineon.com/strongirfet2
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What‘s new?

Support

OptiMOS™ PD

Sensors

Special product families

119Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators

StrongIRFET™ 2 power MOSFETs are the latest generation to be added to the family. Available in 30 V, 40 V, 60 V, 80 V
and 100 V , this family offers broad availability and excellent price/performance ratio and are suitable for a broad range
of applications.

Powermanagement ICs
Sensors

For high and low frequency applications OptiMOS™ 3 power MOSFETs is our largest OptiMOS™ family and complements
our existing product portfolio as well as providing additional options when best-in-class is not required. StrongIRFET™
is recommended for 20-300 V applications when the high performance is not essential and the cost is a more significant
consideration.

WBG semiconductors

OptiMOS™ 6 power MOSFETs 40 V, 80 V, 100 V, and 120 V are the newest addition to the OptiMOS™ product family. They
are the perfect solution when best-in-class (BiC) products and high efficiency over a wide range of output power are
required. For other voltage classes, from 15 V up to 150 V, OptiMOS™ 5 represents the latest generation in the market,
offering low conduction losses and high switching performance.

USB-C controllers
and peripherals

Microcontrollers

Building on its legacy of innovation, Infineon now unveils the industry’s premier 15 V trench power MOSFETs, using
the brand-new OptiMOS™ 7 technology. The OptiMOS™ 7 15 V series primarily targets optimized DC-DC conversion forservers, computing, datacenter, and artificial intelligence applications.

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

With more than 40 years of experience in power MOSFET innovation, Infineon offers a broad portfolio of products. The
product portfolio is divided into “active and preferred”, referring to the latest technology available offering best-inclass performance, and “active”, consisting of well-established technologies which complete this broad portfolio.

Click here to learn more:
www.infineon.com/optimos6
www.infineon.com/optimos7

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www.infineon.com/smallsignal

Supportwww.infineon.com/powermosfet-12V-300V
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120Solutions

OptiMOS™ and StrongIRFET™

Applications

Guidance for applications and voltage classes

60 V

75 V
to 80 V

Low power

OptiMOS™

✓

✓

✓

✓

StrongIRFET™

✓

✓

✓

✓

Power tools,
multicopter, battery,industrial drives

High power(LEV, LSEV)

Solar

100 V

120 V
to 150 V

200 V

✓

✓

✓
✓

OptiMOS™

✓

StrongIRFET™

✓

✓

✓

✓

OptiMOS™

✓

✓

✓

✓

StrongIRFET™

✓

✓

✓

250 V

300 V

500-950 V MOSFETs

40 V

Gate-driver ICs

15 V
to 30 V

Battery powered

Recommended voltage

15-300 V MOSFETs

OptiMOS™ and StrongIRFET™ portfolio, covering from 15 up to 300 V MOSFETs, can address a broad range of needsfrom low to high switching frequencies. The tables below provide a guidance on the recommended OptiMOS™ or
StrongIRFET™ products for each major sub-application and voltage class.

LCD TV

Server

AC-DC

✓

✓

✓

✓

✓

✓

✓

Digital isolators✓✓

OptiMOS™

✓

✓

✓

✓

✓

✓

✓

✓

✓

StrongIRFET™

✓

✓

✓

✓

✓

✓

✓

✓

✓

OptiMOS™

✓✓

StrongIRFET™

✓✓

OptiMOS™

✓

✓

✓

✓

StrongIRFET™

✓

✓

✓

✓

OptiMOS™

✓✓

StrongIRFET™

✓

✓

✓

✓

OptiMOS™

✓✓✓

StrongIRFET™

✓

✓

✓

✓

✓

✓

✓

✓

✓

OptiMOS™
StrongIRFET™

✓

OptiMOS™

✓✓

StrongIRFET™

✓✓

OptiMOS™

✓

✓

✓

✓

✓

StrongIRFET™

✓

✓

✓

✓

✓

IGBT discretes andsilicon power diodes

fast switching✓

WBG semiconductors

Powermanagement ICs

Telecom✓✓

StrongIRFET™ recommended

OptiMOS™ recommended

StrongIRFET™ available

OptiMOS™ available

SensorsSMPS

PC Power✓✓Intelligent powerswitches and modules

Adapter /Charger✓✓

Microcontrollers

Offline UPS✓✓

USB-C controllers
and peripherals

Online UPS✓

StrongIRFET™

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www.infineon.com/smallsignal

SupportInverters

slow switching
OptiMOS™

121

Solutions

OptiMOS™ and StrongIRFET™

TO-220 FullPAK

D2PAK

D2PAK 7-pin

TOLT(Top-sidecooling)

TOLG(Gullwingleads)

Optimized
for top-side
cooling

Optimized
for TCoB 1)
robustness

TO-Leadless

15-300 V MOSFETs

TO-220500-950 V MOSFETs

TO-247

Applications

Space-saving and high-performance packages

Optimized for high power applications and high current capability

5.0

4.4

4.5

4.4

4.4

2.3

2.3

2.3

40.15 x 15.9

29.5 x 10.0

29.5 x 10.0

15.0 x 10.0

15.0 x 10.0

11.7 x 9.9

15.0 x 9.9

11.7 x 9.9

Thermal resistance RthJC [K/W]

2.0

0.5

2.5

0.5

0.5

0.4

0.4

0.4

sTOLL

PQFN 8x6

SuperSO8

SuperSO8
dual-sidecooling (DSC)PQFN 5x6
Source-Down

PQFN 5x6 Source-Down dual-side cooling (DSC)

Power BlockPQFN 3.3x3.3
Source-Down

PQFN 3.3x3.3

PQFN 3.3x3.3
Source Down
dual-side cooling (DSC)PQFN 2x2

DirectFET™

Optimized forhigh powerin small form
factorHighest power
density in theindustry

For highest
efficiency
and power
management

Optimized
for dual-side
cooling

Highest power
density per area

Optimized
thermal performance

Significant
design shrink

Highest power
density per area

High efficiency
in smallform factor

Optimized
thermal performance

Enablessignificant
space saving

Optimized
for dual sidecooling

2.3

1.0

1.0

0.75

1.0

0.7

5.0 x 6.0: 1.0
6.3 x 6.0: 0.9
6.3 x 6.0 DSC: 0.7

1.0

1.0

1.0

0.9

Small: 0.65
Medium: 0.65
Large: 0.71

8.0 x 7.0

8.0 x 6.0

5.15x6.15

5.0 x 6.0

5.0 x 6.0

5.0 x 6.0

5.0 x 6.0
6.3 x 6.0

3.3 x 3.3

3.3 x 3.3

3.3 x 3.3

2.0 x 2.0

Small: 4.8 x 3.8
Medium: 6.3
x 4.9
Large: 9.1 x 6.98

0.5

0.8

0.5

0.45

0.45

1.5

1.4

3.2

1.4

11.1

0.5

Gate-driver ICs

Height [mm]Outline [mm]Sensors

WBG semiconductors

Powermanagement ICs

Thermal resistance RthJC [K/W] 0.6

Microcontrollers

Outline [mm]USB-C controllers
and peripherals

Height [mm]Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators–

Special features

Click here to learn more:

1) Temperature cycling on board

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122Solutions

OptiMOS™ and StrongIRFET™

Gate-driver ICs

Infineon offers innovative packages such as DirectFET™ and TO-Leadless (TOLL). DirectFET™ is designed for highfrequency applications by offering the lowest parasitic resistance. This package is available in three different can sizes:
small, medium, and large. TO-Leadless is optimized to dissipate power up to 375 W, increasing power density with asubstantial reduction in footprint.

IGBT discretes andsilicon power diodes

Digital isolators

New package innovations include the SuperSO8 Source-Down package offering high power density and performance;
the TOLG (Gullwing leads) optimized for TCoB (Thermal cycling on board) robustness; TOLT (top-side cooling)
optimized for superior thermal performance; sTOLL optimized for high power in small form factor; and the SuperSO8
dual-side cooling (DSC) optimized for dual-side cooling in a standard 5x6 mm2 footprint.

700
PQFN 8x6

DirectFET L

D2PAK 7-pin+

PQFN 5x6 SD DSC

TOLL

D2PAK 7-pin

TO-247

TOLT
D2PAK

TOLG
Super SO8

Microcontrollers

sTOLL

Super SO8 DSC
TO-220

PQFN 3.3x3.3 SD DSC

200

Scalable Power Block DSC
USB-C controllers
and peripherals

Scalable Power Block300

TO-220 FP
DirectFET M

PQFN 3.3x3.3 SD

DPAK

Power
management ICs

PQFN 3.3x3.3

100
DirectFET S
PQFN 2x2

0
50

100

150

200

250

WBG semiconductors

0

Package footprint [mm2]SMD (with leads)

THD

Sensors

SMD (leadless)

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www.infineon.com/smallsignal

Support

ID max at TC = 25°C [A]

500

400

Intelligent powerswitches and modules

600
PQFN 5x6 SD

500-950 V MOSFETs

Infineon has been making an impact in the MOSFET industry with innovation in MOSFET manufacturing techniques
and processes as well as pioneering new packages to meet the changing demands of cutting-edge designs in various
applications. OptiMOS™ and StrongIRFET™ technologies are available in different packages to address demands forhigh current carrying capability and significant space saving. The broad portfolio enables footprint reduction, boosted
current rating, and optimized thermal performance. While the surface mount leadless devices are enabled for footprint
reduction, through-hole packages are characterized by a high-power rating.

15-300 V MOSFETs

Applications

Discrete packages

123Solutions

OptiMOS™ 7 15 V

Applications

OptiMOS™ 7 15 V

15-300 V MOSFETs

Infineon’s latest technology with the industry’s first 15 V trench power
MOSFETs provides the next level of system efficiency and performance

500-950 V MOSFETs

Infineon introduced the industry’s first 15 V trench power MOSFETs, utilizing the brand-new OptiMOS™ 7 technology.
This system and application-optimized technology targets DC-DC conversion with low server and computing
applications output voltages.

Digital isolators

95

IGBT discretes andsilicon power diodes

OptiMOS™ 7 15 V

94

OptiMOS™ 5/6 25 V

93
92
91
90

Intelligent powerswitches and modules

Efficiency [%]

89
88
87
86

0

2

4

6

8

10

12

14

16

18

20

22

24

26

28

30

Half-bridge area=
21.4 mm2

Power loop

LS

Vin

Vout

Cf

HS

Cin
Power loop

USB-C controllers
and peripherals

220 nH, 0.75 mΩ DCR
phase

C2

HS
Vin

C1

High-side: PQFN 2 x 2 Drain-down
Low-side: PQFN 3.3 x 3.3 Source-down

phase

LS

GND

GND

Power
management ICs

3.4 mmFeatures and benefits
Key features

Key benefits– Improved efficiency in sub 12 V DC-DC output stages where 25 V MOSFETs are used
– Reduced conduction losses– Highest efficiency with best switching performance– Center-Gate for ideal parallelization, Standard-Gate for easy layout fit-in– Better thermal management with significant space saving enablement

Sensors– First 15 V trench power MOSFETs– Benchmark RDS(on) compared to 25 V node
– Outstanding FOMQg/FOMQOSS– Ultralow package parasitics– Standard and Center-Gate footprints with dual-side cooling variants

Microcontrollers

Current [A]

6.3 mm

OptiMOS™ 7 15 V vs. OptiMOS™ 5 / 6 25 V
‒ Outstanding FOMQg/FOMQOSS
improves peak efficiency by 
0.2 percent while enabling highfrequency operation‒ Lower RDS(on) improves full load
efficiency by 0.85 percent whileenabling output power increase

WBG semiconductors

The high-side MOSFET uses the
PQFN 2x2 (taking advantage of thelower switching losses) and thelow-side MOSFET uses the SourceDown (taking advantage of the low
conduction losses).

Gate-driver ICs

Compared to OptiMOS™ 5 25 V, the OptiMOS™ 7 15 V MOSFET family offers a lower breakdown voltage, significantly
reducing RDS(on) and FOMQg/FOMQOSS. The best-in-class product portfolio comprises Source-Down PQFN 3.3x3.3
packages with bottom and dual-side cooling variants in Standard and Center-Gate footprints for flexible and optimal
PCB design and a PQFN 2x2 package with a reinforced clip. The latter offers a pulsed current capability of more than
500 A, with an RthJC of 1.6 K/W. Reducing conduction and switching losses in combination with the Source-Down
package, simplifies thermal management, pushing power density and efficiency to the next level.

SupportThe OptiMOS™ 7 15 V product family
offers a leap forward in technology
supporting new trends in power
distribution architectures, e.g., highratio DC-DC conversion, enabling
further advancements in server,
datacom, and artificial intelligence
applications while minimizing CO2

footprint.

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Solutions

OptiMOS™ 7 40 V

Digital isolators

The new OptiMOS™ 7 40 V power MOSFET offers a leap forward in terms of RDS(on) reduction, a product feature highly
beneficial in BMS applications, facilitating increased power density, improved system efficiency and cost reduction.
Safe operating area
ISCH42N04LM7 has a higher
DC current capability than the
BSC007N04LS6 mainly driven
by the lower RDS(on):at 0.1 V DC > 40%
at 40 V DC > 30%

ID=f(VDS); TC=25°C; D=0 parameter: tp

IGBT discretes andsilicon power diodes

104
1 µs

103
10 µs
102

Intelligent powerswitches and modules

100 µs
1 ms

101

100

Microcontrollers

ID [A]

10 ms

Also in short pulse regime andhigh VDS there is noticeable current
capability improvement:
at 40 V 1 ms > 20%
at 40 V 100 µs > 10%

DC

10-1

10-1

100

VDS [V]

ISCH42N04LM7

101

USB-C controllers
and peripherals

10-2
102

BSC007N04LS6

Key features

Powermanagement ICs

Features and benefits
Key benefits

WBG semiconductors– Best fit in BMS applications– Energy loss minimization with highest power density– Multiple sourcing possibility– Increased reliability and robustness

SupportSensors– BiC 40 V power MOSFET in a SuperSO8 5x6 in the market– Outstanding RDS(on)– Industry standard footprint– Wide safe operating area

500-950 V MOSFETs

Infineon introduces the best-in-class 40 V power MOSFET in the latest OptiMOS™ 7 trench technology. This new
product expands the OptiMOS™ 7 portfolio from the industry’s first 15 V power MOSFETs to the lowest RDS(on) in a
SuperSO8 5x6 40 V power MOSFET, minimizing the energy loss in the system and making it best fit in BMS applications.
The RDS(on) is improved by 40 percent compared to the existing OptiMOS™ 6 40 V products. In addition, the SuperSO85x6 package makes a 50 percent PCB real estate area reduction possible when compared to the DirectFET™ (L) solution
while making the need for parallelization obsolete.

Gate-driver ICs

Unleash maximum power with the next best-in-class OptiMOS™ 7 40 V
power MOSFET in a SuperSO8 5x6

15-300 V MOSFETs

Applications

OptiMOS™ 7 40 V

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OptiMOS™ Scalable Power Block15-300 V MOSFETs

Symmetric half-bridge solution enabling 50 percent improvement in power density

Applications

Solutions

OptiMOS™ Scalable Power Block

500-950 V MOSFETs

OptiMOS™ 6 40 V and OptiMOS™ 5 100 V Symmetric power block (Q1 and Q2 of similar RDS(on)) integrates a low-side anda high-side MOSFET in a compact leadless SMD 6.3x6.0 mm² package targeting a variety of applications (drives, SMPS).
By replacing two separate discrete packages, e.g., SuperSO8 (PQFN 5x6), customers can shrink the power section on
the board by at least 50 percent.

Intelligent powerswitches and modules

Integrated symmetric half-bridge solution using the latest OptiMOS™ silicon
technology offered in both over-molded and dual-side cooling options forsupreme power density and performance advantage.

Q2
Dual N-MOSFET

Microcontrollers

Half-bridge replacement in Inverter circuit for drives

Q1
Dual N-MOSFET

IGBT discretes andsilicon power diodes

Digital isolators

Gate-driver ICs

The MOSFET half-bridge family features Infineon’s proven OptiMOS™ 5 and 6 technologies, offering very low on-state
resistance (RDS(on)) and figure of merits (Qg, Qgd). The reduction in the package’s parasitic inductance of the package
results in improved switching performance and EMI, as well as reduced overall BOM cost. Optimized lead-frame andCu-clip significantly improve the package’s thermal performance. The dual-side cooling version of the package boosts
the power throughput by an additional 25 percent.

Q3
Dual N-MOSFET

VBAT
BLDC
U2
integrated gate driverM
USB-C controllers
and peripherals

5V
DCDC converterand LDO

Charge pumpMultiCAN

CCU8Gate drivers

POSIF

ADC

Current sense
amplifier3 x Hall latches(if required)Power
management ICs

U1
Microcontroller
XMC1404

SR1

SR3

L

Sensors

Cr2

M1

WBG semiconductors

Power switches in LLC circuit

C2
Cr2

M2

SR4
SupportSR2

Features and benefits
Key features– High chip/package ratio– Optimized lead-frame and Cu-clip design– Internally connected low-side and high side (lowest loop inductance)– Dual-side cooling available

Key benefits– High power capability– Optimum thermal performance– Compact and simplified layout design– Superior switching performance/EMI

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StrongIRFET™ 2 MOSFETs

15-300 V MOSFETs

Applications

StrongIRFET™ 2 MOSFETs –30 V/40 V/60 V/80 V/100 V
Right-fit products for a broad range of applications

DifferentiatedGate-driver ICs
Digital isolators

OptiMOS™ 7
Performance in the application

OptiMOS™ 6

IGBT discretes andsilicon power diodes

OptiMOS™ 5
StrongIRFET™ 2
OptiMOS™ 3

Standard

Product qualification

Intelligent powerswitches and modules

StrongIRFET™
IR MOSFET

Best-fit

Industry

Microcontrollers

Price performance

500-950 V MOSFETs

The new StrongIRFET™ 2 power MOSFETs are the latest generation of MOSFETs addressing a wide range of applications
such as adapters, motor drives, e-scooters, battery management systems, light electric vehicles, robotics, power andgardening tools, and other consumer applications. Featuring broad availability and excellent price/performance ratio
and robustness, this new technology offers right-fit products with an easy choice for designers interested in convenient
selection and purchasing. Optimized for both low- and high-switching frequencies, the family supports a broad range ofapplications enabling flexibility in design.

Features and benefits
Key features

Key benefits

USB-C controllers
and peripherals– Increased security of supply– Right-fit products– Supports wide variety of applications– Standard pin out allows for drop-in replacement– Increased product ruggednessPowermanagement ICs– Broad availability from distribution partners– Excellent price/performance ratio– Ideal for high and low switching frequency– Industry standard footprint– High current rating

StrongIRFET™ 2 vs. previous generation 100 V performance comparison
QG typ. [nC]-65 %Sensors-42 %WBG semiconductors

RDS(on),max. at 10 V [mΩ]

IPP026N10NF2S

IRFB4110

IPP050N10NF2S
Support

IRFB4110

Compared to the previous StrongIRFET™ generation in 100 V TO-220 package, StrongIRFET™ 2 shows significant
improvements such as ~40 percent lower RDS(on) and ~65 percent reduced QG. This results in better efficiency and longer
life time.

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OptiMOS™ Linear FET

Applications

OptiMOS™ Linear FET

OptiMOS™ Linear FET MOSFETs prevent damage at the load by limiting high in-rush current. This product is the perfect
fit for hot-swap, e-fuse (electronic fuse), and battery protection functions commonly found in telecom, servers, andbattery management system (BMS). A new 100 V Linear FET in PQFN 3.3x3.3 is also a fit for soft start in Power-overEthernet (PoE) application.

Digital isolators

Charge and Discharge FET in BMS circuit

Linear FET
Discharge FETS
COUT
Hot swap
controller

Load

S
IGBT discretes andsilicon power diodes

Rsns

D

DriverPowermanagement ICs

USB-C controllers
and peripherals

OptiMOS™ Linear FET offers a muchwider safe operating area (SOA)
compared to standard OptiMOS™
MOSFETs with similar RDS(on).

Intelligent powerswitches and modules

Vin

Microcontrollers

Protection in eFuse/Hot-swap/Soft start circuit

Gate-driver ICs

With Infineon’s OptiMOS™ Linear FET you can avoid settling between on-state resistance (RDS(on)) and linear mode
capability – operation in the saturation region of an enhanced mode MOSFET. The OptiMOS™ Linear FET revolutionary
approach offers the state-of-the-art RDS(on) of a trench MOSFET together with the wide safe operating area (SOA) of aclassic planar MOSFET.

500-950 V MOSFETs

15-300 V MOSFETs

Combining a low RDS(on) with a wide safe operating area (SOA)

Features and benefits
Key benefits

WBG semiconductors

Key features– Rugged linear mode operation– Low conduction losses– Higher in-rush current enabled– Faster start-up and shorter down time
– Compatible footprint for drop-in replacement

Sensors– Wide safe operating area (SOA)– Low RDS(on)– High maximum pulse current– High maximum continuous current– Multiple packages: D²PAK, D²PAK 7-pin, TOLL, PQFN 5x6 and 3.3x3.3

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OptiMOS™ 6 120 V

Infineon’s extensive experience in trench MOSFET technology development, and the knowledge gained from customer
support are the key motivators of the development of the new OptiMOS™ 6 120 V MOSFETs. The new OptiMOS™ 6 120 V
power MOSFET technology offers devices with extremely low on-state resistance and very low gate charges, yielding
the industry’s best figure of merit (FOM). These features make the OptiMOS™ 6 the best fit for high-switching frequency
applications, such as battery-powered power tools, solar applications, and SMPS.

Key features

Gate-driver ICs

Features and benefits
Key benefits– Highest efficiency– Less paralleling required– High power density

Digital isolators– Industry’s lowest RDS(on) in 120 V– Best balance between switching and conduction losses– Significantly improved FOMs compared to OptiMOS™ 3

500-950 V MOSFETs

Fully optimized best-in-application performance power MOSFET at 120 V

15-300 V MOSFETs

Applications

OptiMOS™ 6 120 V

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Key Applications
OptiMOS™ 6 120 V is available in logic level and normal level versions to accommodate different application
requirements. It includes the following packages: PQFN 3.3x3.3, SuperSO8, D²PAK, D²PAK-7, TO-220, TOLL, TOLT, TOLG
‒ Gardening tools‒ Power tools‒ eScooter‒ USB PD charger‒ SolarPowermanagement ICs

Lower reverse recovery voltage peak, resulting in significantly improved safety margins for your system design
120
100
80

WBG semiconductors

2 x lower

60
40
20

-20

3 x lower-40
0.0000001

1.5E-070.0000002

2.5E-07

IF (BSC077N12NS3G)

IF (ISC037N12NM6)

VDS (BSC077N12NS3G)

VDS (ISC037N12NM6)

0.0000003

Support

5E-08

Sensors

Commutation waveforms
VDD = 60 V
IF = 50 A
diF/dt = 1000 A/us
TC = 25 °C

0‒ OptiMOS™ 6’s reverse recovery voltage peak is two times lower compared to its predecessor resulting in much better
safety margins in system design.
‒ Lower QRR decreases voltage overshoot and switching loss

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OptiMOS™ 6 135 V and 150 V

500-950 V MOSFETs

The new OptiMOS™ 6 135 V and 150 V technologies were designed to fulfill the requirements of various applications,from synchronous rectification sockets in telecom and server SMPS to motor inverters in eForklifts and light electricvehicles (LEV), solar optimizers, and high-power USB chargers. With industry’s lowest RDS(on), improved switching
performance and excellent EMI behavior both technologies bring unparalleled efficiency, power density, and reliability
into the highly competitive 150 V market. Both newly released product families bring significant improvements uponits predecessor OptiMOS™ 5 150V. This offering provides the customer best-in-application products with different
possibilities. Our ability to scale sets us apart as the industry’s leading supplier of power MOSFETs.

Gate-driver ICs

Best-in-application offering with the latest OptiMOS™ 6 products

15-300 V MOSFETs

Applications

OptiMOS™ 6 135 V and 150 V*

Key features

Digital isolators

Features and benefits
Key benefits– Low conduction and switching losses, in hard and soft switching– Stable operation with improved EMI enabling less overshoot– Better paralleling performance– Enhanced robustness– Longer lifetime and improved reliability

IGBT discretes andsilicon power diodes– Best-in-class RDS(on) and FOMg in 135 V and 150 V– Lower Qrr(typ) and improved diode softness compared to OptiMOS™ 3– Tight Vgs(th) spread– High avalanche ruggedness– Max junction temperature of 175°C and MSL1

 



Which is the right MOSFET voltage for your application?
OptiMOS™ 6 135 V and 150 V new product families
complement the recently released OptiMOS™ 6 120 V. Witha complete portfolio, we offer our customers alternatives
to choose between higher breakdown voltage margin andlower losses.






SupportSensors  


 

WBG semiconductors

Power
management ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

Key Applications‒ Forklift‒ eScooter‒ Telecom and Server‒ Solar‒ Power and gardening tools‒ Charger‒ UPS

Click here to learn more:
www.infineon.com/powermosfet-12V-300V
www.infineon.com/optimos-strongirfet-packages* Coming soon

www.infineon.com/optimos6
www.infineon.com/optimos7

www.infineon.com/strongirfet2
www.infineon.com/smallsignal
130

Solutions

OptiMOS™ 6 200 V

Features and benefits
Key benefits

Digital isolators

Key features

IGBT discretes andsilicon power diodes– Low conduction lossses– Low switching losses– Stable operation with improved EMI– Enhanced robustness– Less paralleling required and better current sharing

Microcontrollers

Intelligent powerswitches and modules– Best-in-class RDS(on) in 200 V– Lower Qrr(typ) and improved diode softness compared to OptiMOS™ 3– Improved capacitance linearity– Wide SOA– Tight VGS(th) parametric spread

500-950 V MOSFETs

The OptiMOS™ 6 200 V employs an advanced cell design to set the new technology standard in its voltage class. It addresses
the need for high power density, efficiency, and reliability. The OptiMOS™ 6 200 V technology was designed for optimal
performance in motor drive applications such as light electric vehicles (LEV), forklifts, and drones. It features industry-leading
RDS(on), improved switching and current sharing capability, enabling high power density, less paralleling, and excellent
EMI performance. The improved switching behavior makes the OptiMOS™ 6 200 V family an ideal choice for switching
applications such as telecom, server, or audio. Additionally, the combination of wide SOA and industry-leading RDS(on)results in a perfect fit for static switching applications such as battery management systems (BMS).

Gate-driver ICs

Setting the new industry standard

15-300 V MOSFETs

Applications

OptiMOS™ 6 200 V

Application test results

SupportSensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

OptiMOS™ 6 vs. OptiMOS™ 3 in 200 V‒ 42 percent lower RDS(on) enables reduced conduction losses‒ Improved switching behavior enables reduced switching losses‒ At the same output power, the maximum device temperature reduction of 32°C was achieved.
‒ At the same Junction temperature, 38 percent higher load current was achieved.

Click here to learn more:
www.infineon.com/powermosfet-12V-300V
www.infineon.com/optimos-strongirfet-packages

www.infineon.com/optimos6
www.infineon.com/optimos7

www.infineon.com/strongirfet2
www.infineon.com/smallsignal
131

Infineon’s family of OptiMOS™ N-channel power MOSFETs in PQFN 8x6 packages are benchmark products optimized
for very low RDS(on) and high-current capability, alongside Infineon’s renowned quality standard for robust industry
designs. This makes the PQFN 8x6 MOSFET package the ideal solution for various battery powered, battery protection,and battery formation applications requiring low package resistance and high-current handling MOSFETs. The PQFN 8x6
family of MOSFETs is available in a small 8x6 mm leadless package to reduce the physical footprint and overall BOM of
end products. The improved RDS(on) and ID ratings, continuous and pulsed, enable increased battery run time and higher
power density.

4.75 V ... 5.5 V

VIN
VDD

500-950 V MOSFETs

A high-power density package family

Gate-driver ICs

OptiMOS™ 40 V in PQFN 8x6

15-300 V MOSFETs

Applications

Solutions

OptiMOS 40 V in PQFN 8x6

HB
RGHS

Digital isolators

HO
Q2

HI

CBOOT

WCDSC006
Microcontroller

HS

L
RLOAD

IGBT discretes andsilicon power diodes

RGLS
LI

LO
Q1

Intelligent powerswitches and modules

PGND

Features and benefits
Key features

Key benefits– >50% reduction in footprint compared to TOLL

– Power density increase enabling higher power designs while maintaining the– Best-in-class continuous current rating and competitive– Good design martin in worst case conditionals (e.g., in-rush motor stall/short)– Excellent package area utilization– Ultralow package parasitics– Footprint compatability with SuperSO8 5x6– Ultralow RDS(on) with good thermal resistance RthJC– EMI improvement due to lower device parasitics– Simple PCB design change based on SuperSO8 provides scalability across

Microcontrollers
USB-C controllers
and peripherals

varying power requirements

Sensors

WBG semiconductors

Powermanagement ICs

avalanche energy rating

space contraints

Click here to learn more:
www.infineon.com/optimos6
www.infineon.com/optimos7

www.infineon.com/strongirfet2
www.infineon.com/smallsignal

Supportwww.infineon.com/powermosfet-12V-300V
www.infineon.com/optimos-strongirfet-packages

132

Applications

Solutions

Small-signal/
small-power MOSFETs

Small-signal/small-power MOSFETs -250 to 600 V

15-300 V MOSFETs

Combining latest high-performance silicon technology
with small and innovative packaging

500-950 V MOSFETs

Small-signal/small power products are ideally suited for space-constrained automotive and non-automotive
applications. With an optimal price/performance ratio and small footprint packages, Infineon’s small-signal and smallpower MOSFETs are the best fit for a wide range of applications and circuits. These include low-voltage drives, linear
battery charger, battery protection, load switches, DC-DC converters, reverse polarity protection and many more.

Gate-driver ICs

The entire family includes different packages:
SOT-223, SOT-23, SOT-323, SOT-363, SOT-89, TSOP-6, and SC59

8000

100

1000

12000

10000

1000001000000

Intelligent powerswitches and modules
Microcontrollers

Small-signal/small-power MOSFETs areavailable in seven industry-standard
package types ranging from the largest
SOT-223 to the smallest SOT-323.

USB-C controllers
and peripherals

1200
600
-100 V/800
1800-150 V/1200-250 V/4000

10500000

Products are offered in single, dual andcomplementary configurations and aresuitable for a wide range
of applications, including battery
protection, LED lighting, low-voltage
drives, and DC-DC converters.

SOT-323

SOT-23

TSOP-6SC59

SOT-89

SOT-223

Sensors

SOT-363

WBG semiconductors

RDS(on) max. at VGS = 4.5 V [mΩ]

Click here to learn more:
www.infineon.com/powermosfet-12V-300V
www.infineon.com/optimos-strongirfet-packages

www.infineon.com/optimos6
www.infineon.com/optimos7

www.infineon.com/strongirfet2
www.infineon.com/smallsignal

SupportVoltage class [V] ±600V/45000
400 V/25000 30000
250 V/14000 16000
240 V/6000
14000
200 V/1800
150 V/1200
100 V/220
6000
60 V/60
5000
55 V/40650
40 V/56
30 V/17.5
250
25 V/24
20 V/21350– Suitable for automotive and high quality demanding applications– Easy interface to MCU– Reduction of design complexity– Wide selection of products available– Environmentally friendlyPowermanagement ICs– Products available in Automotive, Industrial, and Standard qualification levels– Four VGS(th) classes available for 1.8 V, 2.5 V, 4.5 V, and 10 V gate drives– ESD protected P-channel parts– VDS range from -250 to 600 V– RoHS compliant and halogen free

1

IGBT discretes andsilicon power diodes

Key benefits

Key features-12 V/50-20 V /32
-30 V/40-40 V/112-60 V/65

Digital isolators

The product portfolio covers N-channel and P-channel enhancement mode MOSFETs as well as N-channel depletion
mode products:‒ -250 to -12 V P-channel enhancement mode (available in single and dual configurations)‒ 20 to 600 V N-channel enhancement mode (available in single and dual configurations)‒ -20/+20 V and -30/+30 V complementary (P + N channel) enhancement mode
‒ 60 to 600 V N-channel depletion mode133

New Source-Downdual-side coolingSuperSO8

PQFN 5x6 Source-Down

PQFN 5x6 Source-Downdual-side cooling (DSC)PQFN 3.3 x 3.3 mmstandard
Drain-Down footprint

PQFN 3.3 x 3.3 mm
Available in Standard
and Center-Gate
Source-Down footprint

PQFN 3.3 x 3.3 mm
Available in Standard
and Center-Gate
Source-Down footprint

For highest efficiency
and power manageme

Highest power density
per area

Optimized thermal performance

1.8°C/W

1.4°C/W

1.4°C/W

0.8°C/W

0.45°C/W

0.45°C/W

Key features

Key benefits– Major reduction in RDS(on) , up to 30% due to larger silicon die in– Enabling highest power density and performance– Superior thermal performance– Form factor reduction– Optimized layout possibilities– Simplifying parallel configuration of multiple MOSFETs with Center-Gate– Improved RthJC overcurrent PQFN package technology– High power density– Standard-Gate and Center-Gate footprint options– Available in standard and logic level options

footprints

Optimized thermal management

USB-C controllers
and peripherals

Drain-Down
PQFN 3.3x3.3

In the Source-Down package technology, the heat isdissipated directly into the PCB through a thermal pad
instead of over the bond wire or the copper clip. The
package significantly improves the thermal resistance(RthJC) of this product family. In most cases, thermal vias

Thermal vias
Thermal vias

cannot be used on the thermal pad if it is connected to
the noisy switch node potential. With Source-Down, thethermal pad of the low-side MOSFET is now on the ground
potential enabling the use of thermal vias right underneaththe device. This considerably improves the thermal
performance and the power density in the end application.

Sensors

Source-Down
PQFN 3.3x3.3

15-300 V MOSFETs
Microcontrollers– Simplified gate drivePowermanagement ICs

same package outline

Intelligent powerswitches and modules

Features and benefits

WBG semiconductors

RthJC [C/W]

IGBT discretes andsilicon power diodes

New Source-Down
Bottom-Side CoolingStandard Drain-Down

Digital isolators

Once again, Infineon is setting a new standard in MOSFET performance with the new Source-Down package to support
the requirement for high power density and optimized system-level efficiency. In comparison with a normal Drain-Down
device, in the Source-Down technology, the source potential is connected to the thermal pad. The OptiMOS™ power
MOSFET 3.3x3.3 mm2 Source-Down packages are now available in 15-150 V in BSC (bottom-side cooling) and in DSC(dual-side cooling). The latest addition to the family is the OptiMOS™ power MOSFET 5x6 mm2 Source-Down, available
in BSC. Optional Center-Gate footprint is also available for both families. Here the gate pin is moved to the center
supporting easy parallel configuration of multiple MOSFETs. With the larger drain-to-source creepage distance, it ispossible to connect the gates of multiple devices on a single PCB layer.

500-950 V MOSFETs

An innovative PQFN 3.3x3.3 mm2 and PQFN 5x6 mm2 product family

Gate-driver ICs

OptiMOS™ power MOSFETs 15 -150 V Source-Down

Applications

Solutions

OptiMOS™ 15 -150 V
Source-Down

Thermal vias
Thermal vias

Click here to learn more:
www.infineon.com/optimos6
www.infineon.com/optimos7

www.infineon.com/strongirfet2
www.infineon.com/smallsignal

Supportwww.infineon.com/powermosfet-12V-300V
www.infineon.com/optimos-strongirfet-packages

134Solutions

OptiMOS™ PD

Gate-driver ICs

OptiMOS™ PD is Infineon‘s new MOSFET portfolio representing the best fit for USB-PD and fast charger designs and isavailable in 2 small standard packages: PQFN 3.3x3.3 and SuperSO8. Logic level availability enables parts to be fully
driven from 4.5 V or directly from microcontrollers resulting in a lower part count in the application. The portfolio ranges
from 25 V up to 150 V MOSFETs where 25 V and 30 V products represent the fit as load switch and 60-150 V parts are theoptimal choice to function as synchronous rectification FETs in charger and adapter designs.

OptiMOS™ PD
NMOS/PMOS(25V-30V)

Block diagram+

IGBT discretes andsilicon power diodes

Digital isolators

Voltageclamp*

Small-signal
MOSFETIntelligent powerswitches and modules

Microcontroller

IRL1161L

OptiMOS™ PD
60-150 V–

Microcontrollers* if output voltage > 18 V

OptiMOS™ PD comparison of RDS(on) in 60 V, 80 V, and 100 V

120

-11%

100
-19%

80
60
40

WBG semiconductors

BOM cost.

20
AONS67614 ISC0702NLS

FDMS007N08LC ISC0602NLS

60 V

100 V

OptiMOS™ PD
Sensors

Next best alternative

AONS66917 ISC0802NLS

80 V

Click here to learn more:
www.infineon.com/powermosfet-12V-300V
www.infineon.com/optimos-strongirfet-packages

www.infineon.com/optimos6
www.infineon.com/optimos7

www.infineon.com/strongirfet2
www.infineon.com/smallsignal

SupportFOM at 4.5 V

140

The OptiMOS™ PD family features
MOSFETs offering a low on-state
resistance (RDS(on)), less switchinglosses as well as low gate-, outputand reverse-recovery charges. The
reduction in overall losses results inan excellent price/performance ratio
leading to a decrease in total system

USB-C controllers
and peripherals

-9%

Power
management ICs

160

0500-950 V MOSFETs

The best fit for USB-PD and fast charger designs

15-300 V MOSFETs

Applications

OptiMOS™ PD

135

Solutions

TOLx family

Drain

Gate

BottomSourceOptimized for high power applications
TO-Leadless is optimized to handle currents up to 500 A, increasing power densitywith a substantial reduction in footprint. A footprint reduction of 30 percent
compared to D2PAK, together with a height reduction of 50 percent, results in an
overall space saving of 60 percent enabling much more compact designs.
Key features

Key benefits– Best-in-class technology– High current rating > 500 A– 60% space reduction compared to D2PAK 7-pin– High performance capability– High system reliability– Optimized board utilization

Gate-driver ICs

Top

BottomSourceKey features

Key benefits– Best-in-class technology– High current rating > 450 A– Low ringing and voltage overshoot– 60% space reduction compared to D2PAK 7-pin– Gullwing leads– High performance capability– High system reliability– High efficiency and lower EMI– Optimized board utilization– High thermal cycling on board performance

IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules

Gate

Optimized for better TCoB robustness
TOLG package offers a compatible footprint to the TO-Leadless with theadditional feature of Gullwing leads resulting in two times higher TCoB
performances compared to TO-Leadless. This package is excellent on
aluminum insulated metal substrate boards (Al-IMS).

Microcontrollers

Drain

Digital isolators

TOLG (Gullwing leads)
Top

Drain

SourceKey features

Key benefits– Low RDS(on)– High current rating– Top-side cooling– Negative standoff– Reduction in conduction losses– Increased product ruggedness– Superior thermal performance– Minimize thermal resistance to heatsinkPowermanagement ICs
WBG semiconductors

BottomGate

Optimized for superior thermal performance
TOLT is the new top-side cooling package within the TOLx family. With topside cooling, the drain is exposed at the surface of the package allowing for
95 percent of the heat to be dissipated directly to the heatsink, achieving
20 percent better RthJA and 50 percent improved RthJC compared to the TOLL
package. With bottom-side cooling packages, like the TOLL or the D2PAK, theheat is dissipated via the PCB to the heatsink resulting in high power losses.

Sensors

Drain

Click here to learn more:
www.infineon.com/powermosfet-12V-300V
www.infineon.com/optimos-strongirfet-packages

www.infineon.com/optimos6
www.infineon.com/optimos7

www.infineon.com/strongirfet2
www.infineon.com/smallsignal

SupportSourceUSB-C controllers
and peripherals

TOLT (Top-side cooling)Top

500-950 V MOSFETs

TO-Leadless (TOLL)

15-300 V MOSFETs

Applications

TOLx family

136

Solutions

TOLx family

TOLL

Heat
dissipation

Solder joint

PCB

Heat
dissipation

Heat
dissipation

IMS PCBHeatsink

TIM (Thermalinterface material)

Heatsink

TOLG

IMS copper top
IMS electronic layer

500-950 V MOSFETs

Heat
dissipation

TOLG

TIM/
Thermal grease

PCB

Heatsink

Digital isolators

SolderGate-driver ICs

With TOLL/TOLG, board mounting, the heat is dissipated through the PCB to the heatsink.
Due to the PCB thermal resistance, power losses occur.
MOSFET(including chip,die attached anddrain tab)

TOLT

Heat
dissipation

TOLT

Heat
dissipation

TIM (Thermalinterface material)

IGBT discretes andsilicon power diodes

Heatsink

PCB

Microcontrollers

TIM/
Thermal grease

Intelligent powerswitches and modules

With top-side cooling setup, the drain pad is exposed on the top of the package allowing the majority of the heatto be dissipated into the top-mounted heatsink. This pulls heat away from the PCB resulting in at least 20 percent
better RthJA compared to standard over-molded TOLL.

Heatsink

USB-C controllers
and peripherals

MOSFET(including chip,die attached anddrain tab)Powermanagement ICs

2000

WBG semiconductors

TOLL fullfills
the standard
requirments
IPC - 9701
requirements

Sensors0

Click here to learn more:
www.infineon.com/powermosfet-12V-300V
www.infineon.com/optimos-strongirfet-packages

www.infineon.com/optimos6
www.infineon.com/optimos7

www.infineon.com/strongirfet2
www.infineon.com/smallsignal

SupportCyclesThermal cycling on IMS board (TCoB) performance1000

15-300 V MOSFETs

TOLL

Applications

TOLx family – Cooling concept137Applications

Solutions

Product portfolio

OptiMOS™ 7 15 V logic level

IQE004NE1LM7
RDS(on)=0.57 mΩ

IQE004NE1LM7SC
RDS(on)=0.57 mΩ

IQE004NE1LM7CG
RDS(on)=0.57 mΩ

IQE004NE1LM7CGSC
RDS(on)=0.57 mΩ

PQFN 2x2

500-950 V MOSFETs

ISK018NE1LM7
RDS(on)=2.15 mΩ

2-4

RDS(on),max
at VGS=4.5 V[mΩ]

PQFN 2x2

PQFN 3.3x3.3

SuperSO8
IRFH6200TRPBF 1)
RDS(on)=0.99 mΩ

Digital isolators<1
IRLHM620TRPBF** 1)
RDS(on)=2.5 mΩ

2-4
IRLHS6242TRPBFRDS(on)=11.7 mΩ

IGBT discretes andsilicon power diodes> 10Gate-driver ICs

OptiMOS™ and StrongIRFET™ 20 V (super) logic level

OptiMOS™ and StrongIRFET™ 25 V logic level
PQFN 2x2

PQFN 3.3x3.3

SuperSO8
BSC004NE2LS5
RDS(on)=0.45 mΩ

<1
BSZ009NE2LS5
RDS(on)=0.9 mΩ

PQFN 3.3x3.3
Source-Down DSC(dual-side cooling)

PQFN 5x6
Source-Down

IQE006NE2LM5
RDS(on)=0.65 mΩ

IQE006NE2LM5CGSC
RDS(on)=0.58 mΩ

IQDH29NE2LM5CG
RDS(on)=0.29 mΩ

IQDH29NE2LM5SC
RDS(on)=0.29 mΩ

IQE006NE2LM5CG
RDS(on)=0.65 mΩ

IQE006NE2LM5SC
RDS(on)=0.58 mΩ

IQDH29NE2LM5
RDS(on)=0.29 mΩ

IQDH29NE2LM5CGSC
RDS(on)=0.29 mΩ

PQFN 3.3x3.3
Source-Down

BSC009NE2LS5I*
RDS(on)=0.95 mΩ

PQFN 5x6 SourceDown DSC (dual-side
cooling)

IQDH29NE2LM5SC

Microcontrollers

RDS(on),max
at VGS=10 V[mΩ]Rds(on)=0.29 mΩ
IQDH29NE2LM5CGSC

BSZ011NE2LS5I
RDS(on)=1.1 mΩ

Rds(on)=0.29 mΩ
USB-C controllers
and peripherals

BSZ013NE2LS5I*
RDS(on)=1.3 mΩ
BSZ014NE2LS5IF**
RDS(on)=1.45 mΩ

BSC015NE2LS5I*
RDS(on)=1.5 mΩ

Powermanagement ICs

BSC018NE2LS
RDS(on)=1.8 mΩ
BSZ018NE2LS
RDS(on)=1.8 mΩ
ISK024NE2LM5
RDS(on)=2.4 mΩ

BSZ031NE2LS5
RDS(on)=3.1 mΩ

WBG semiconductors

BSC026NE2LS5
RDS(on)=2.6 mΩ

2-4

BSC032NE2LS
RDS(on)=3.2 mΩ
BSZ060NE2LS
RDS(on)=6.0 mΩ

BSC050NE2LS
RDS(on)=5.0 mΩ

Sensors

4-10

Intelligent powerswitches and modules<1

PQFN 3.3x3.3
Source-Downdual-side cooling (DSC)PQFN 3.3x3.3
Source-Down

15-300 V MOSFETs

RDS(on),max
at VGS=4.5 V[mΩ]

Click here to learn more:* Optimized for resonant applications (e.g. LLC converter)

www.infineon.com/optimos6
www.infineon.com/optimos7

www.infineon.com/strongirfet2
www.infineon.com/smallsignal** Monolithically-integrated Schottky-like diode *** RDS(on),max at VGS=4.5 V 1) 2.5 VGS capable

Supportwww.infineon.com/powermosfet-12V-300V
www.infineon.com/optimos-strongirfet-packages

138

Applications

Solutions

Product portfolio

OptiMOS™ 25 V in Power Block 5x6
RDS(on), max. [ mΩ] at VGS=4.5 V max.

QG [nC] at VGS=4.5 V typ.

Low-sideHigh-side

Low-sideSuperSO8

✓

25

4.0

1.2

5.6

16.0

BSG0811ND

SuperSO8

–

25

4.0

1.1

5.6

20.0

BSG0813NDI

SuperSO8

✓

25

4.0

1.7

5.6

12.0

500-950 V MOSFETs

BSG0810NDI

OptiMOS™ 25/30 V symmetrical and asymmetrical dual N-channel MOSFETs in 5x6 and 3x3 PQFN
Integrates the low-side and high-side MOSFET of a synchronous DC-DC converter into a single package.
The small outline and the interconnection of the two MOSFETs within the package minimize the loop inductance which boosts efficiency.
RDS(on), max. [ mΩ] at VGS=4.5 V max.

BVDSS [V]QG [nC] at VGS=4.5 V typ.

Part number

Package

BSC0911ND*

asymmetrical dual 5x6

–

25

4.8

1.7

7.7

25

BSC0921NDI*

asymmetrical dual 5x6

✓

30

7

2.1

5.8

21

BSC0923NDI*

asymmetrical dual 5x6

✓

30

7

3.7

5.2

12.2

BSC0924NDI*

asymmetrical dual 5x6

✓

30

7

5.2

5.2

8.6

High-side

Low-sideHigh-side

Low-side

Digital isolators

Monolithically-integrated
Schottky-like diode

OptiMOS™ 40 V and 100 V in Symmetrical Power Block 6.3x6.0
PackageDual-side cooling

BVDSS [V]RDS(on) [ mΩ] at VGS = 10 V max

QG [nC] at VGS = 10 V typ.

ISG0613N04NM6H

Power Block 6.3x6.0

–

40 V

0.88

69

ISG0613N04NM6HSC

Power Block 6.3x6.0

✓

40 V

0.88

69

ISG0616N10NM5HSC

Power Block 6.3x6.0

✓

100 V

3.4

52

Intelligent powerswitches and modules

Part number

Microcontrollers

OptiMOS™/StrongIRFET ™ 30 V - 100 V dual N-channel MOSFETs
Integrates two independent N-channel MOSFETs into a single package for high power density and compact design.
Ideal for DC motors with power rating < 200 W
Monolithicallyintegrated
Schottky like
diode

Package

RDS(on), max. [ mΩ] at VGS=10 V max.
BVDSS [V]High-side

QG [nC] at VGS=10 V typ.

Low-sideHigh-side

Low-side

IRF7907*

asymmetrical dual SO8

–

30

16.4

11.8

6.7**

14**

IRLHS6376*

symmetrical dual PQFN 2x2

–

30

63**

63**

2.8**

2.8**

BSC072N04LD*

symmetrical dual 5x6

–

40

7.2

7.2

39

39

BSC076N04ND

symmetrical dual 5x6

–

40

7.6

7.6

28

28

BSC155N06ND

symmetrical dual 5x6

–

60

15.5

15.5

21

21

IRF7351

symmetrical dual SO8

–

60

17.8

17.8

24

24

Power
management ICs

Part number

WBG semiconductors

Dual N-channel audio MOSFETs
Digital audio MOSFET half-bridges are specifically designed for class D audio amplifier applications.
They consist of two power MOSFET switches connected in half-bridge configuration.
Package

Monolithicallyintegrated Schottky
like diode

BVDSS [V]IRFI4212H-117P

half-bridge in TO220FP–

100

RDS(on), max. [ mΩ] at VGS=4.5 V max.

QG [nC] at VGS=4.5 V typ.

High-side

Low-sideHigh-side

Low-side

72.5

72.5

12

12

Sensors

Part number

15-300 V MOSFETs

High-side

Gate-driver ICs

BVDSS [V]

IGBT discretes andsilicon power diodes

Monolithically-integrated
Schottky-like diodePackage

USB-C controllers
and peripherals

Part number

Click here to learn more:* Logic level (capable of 4.5 V gate drive)** RDS(on) at VGS=4.5V

www.infineon.com/optimos6
www.infineon.com/optimos7
1) Coming soon

www.infineon.com/strongirfet2
www.infineon.com/smallsignal

Supportwww.infineon.com/powermosfet-12V-300V
www.infineon.com/optimos-strongirfet-packages

139Applications

Solutions

Product portfolio

OptiMOS™ and StrongIRFET™ 30 V normal level
TOLL(TO-Leadless)SuperSO8

15-300 V MOSFETs

RDS(on), max.
at VGS=10 V[mΩ]

IPT004N03L
RDS(on)=0.04 mΩ

<1
IRF8788TRPBFRDS(on)=2.8 mΩ

500-950 V MOSFETs

IRF7862TRPBFRDS(on)=3.3 mΩ

2-4

IRF7832TRPBFRDS(on)=4.0 mΩ
IRF8736TRPBFRDS(on)=4.8 mΩ

Gate-driver ICs

4-10

OptiMOS™ and StrongIRFET™ 30 V logic level
TO-252(DPAK)

TO-220Digital isolators

RDS(on), max.
at VGS=10 V[mΩ]

IPP011N03LF2S
RDS(on)=1.1 mΩ

IGBT discretes andsilicon power diodes

IPP018N03LF2S
RDS(on)=1.8 mΩ

1-2

IPP020N03LF2S
RDS(on)=2.0 mΩ
IPP023N03LF2S
RDS(on)=2.3 mΩ

IPD031N03L G
RDS(on)=3.1 mΩ

2-4Intelligent powerswitches and modules

IPP033N03LF2S
RDS(on)=3.3 mΩ
IPP044N03LF2S
RDS(on)=4.4 mΩ

4-10

Microcontrollers

IPP050N03LF2S
RDS(on)=5.0 mΩ

<1

PQFN 3.3 x 3.3
Source-Down

PQFN 3.3x3.3
Source-Down DSC(dual-side cooling)

PQFN 5x6
Source-Down

PQFN 5x6
Source-Down DSC(dual-side cooling)

PQFN 3.3 x 3.3

SuperSO8

IQE008N03LM5
RDS(on)=0.85 mΩ

IQE008N03LM5CGSC
RDS(on) = 0.85 mΩ

IQDH35N03LM5
RDS(on) = 0.35 mΩ

IQDH35N03LM5SC
RDS(on)=0.35 mΩ

BSC005N03LS5
RDS(on)=0.55 mΩ

IQE008N03LM5CG
RDS(on)=0.85 mΩ

IQE008N03LM5SC
RDS(on) = 0.85 mΩ

IQDH35N03LM5CG
RDS(on) = 0.35 mΩ

IQDH35N03LM5CGSC
RDS(on)=0.35 mΩ

BSC005N03LS5I*
RDS(on)=0.5 mΩ

Powermanagement ICs

RDS(on), max.
at VGS=10 V[mΩ]

USB-C controllers
and peripherals

OptiMOS™ and StrongIRFET™ 30 V logic level

BSC011N03LSRDS(on)=1.1 mΩ
BSC011N03LSI*RDS(on)=1.1 mΩ

WBG semiconductors

BSZ0500NSI*
RDS(on)=1.5 mΩ

1-2

BSZ019N03LSRDS(on)=1.9 mΩ
BSZ0501NSI*RDS(on)=2.0 mΩ

BSC0901NS
RDS(on)=1.9 mΩ

Sensors

BSC0501NSI**RDS(on)=1.9 mΩ

Click here to learn more:*Monolithically-integrated Schottky-like diodewww.infineon.com/optimos6
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Applications

Solutions

Product portfolio

OptiMOS™ and StrongIRFET™ 30 V logic level
PQFN 3.3x3.3

SuperSO8

PQFN 2x2
15-300 V MOSFETs

RDS(on), max.
at VGS=10 V[mΩ]

ISK036N03LM5
RDS(on)=3.6 mΩ
BSZ0902NS
RDS(on)=2.6 mΩ

500-950 V MOSFETs

BSC0902NS
RDS(on)=2.6 mΩ

BSZ0502NSI**RDS(on)=2.8 mΩ

BSC0902NSI*RDS(on)=2.8 mΩ

2-4

BSC030N03LS G
RDS(on) =3.0 mΩ

Gate-driver ICs

BSC0504NSI*RDS(on)=3.7 mΩ
BSZ0904NSI**RDS(on)=4.0 mΩ
BSC0906NS
RDS(on)=4.5 mΩ

BSZ0506NS
RDS(on)=4.4 mΩ

w

OptiMOS™ and StrongIRFET™ 40 V normal level
RDS(on), max.
at VGS=10 V[mΩ]

TO-252(DPAK)

TO-263(D2PAK)

TO-263(D2PAK 7-pin)

TO-220<1

PQFN 5.x6
Source-Down

PQFN 5x6
Source-Down
DSC(dual-side
cooling)sTOLL

SuperSO8

IQD005N04NM6CG
RDS(on) = 0.5 mΩ

IQD005N04NM6SC
RDS(on)=0.47 mΩ

IST006N04NM6
RDS(on)=0.6 mΩ

ISC007N04NM6
RDS(on)=0.7 mΩ

IQD005N04NM6
RDS(on) = 0.5 mΩ

IQD005N04NM6CGSC
RDS(on)=0.47 mΩ

IPF009N04NF2S
RDS(on) = 0.9 mΩ

TOLL(TO-Leadless)
IRL40T209
RDS(on)=0.72 mΩ

ISC010N04NM6
RDS(on)=1.0 mΩ
IST010N04NM5
RDS(on)=1.0 mΩ

USB-C controllers
and peripherals

ISC012N04NM6
RDS(on) =1.2 mΩ
IPB012N04NF2S
RDS(on) = 1.25 mΩ

IPP011N04NF2S
RDS(on) = 1.15 mΩ
IPP013N04NF2S
RDS(on) = 1.3 mΩ

IPB014N04NF2S
RDS(on) = 1.45 mΩ

IPF013N04NF2S
RDS(on) = 1.35 mΩ

IPP015N04NF2S
RDS(on) = 1.5 mΩ

ISC015N04NM5
RDS(on)=1.5 mΩ

IRFS7437TRLPBFRDS(on) =1.8 mΩ

Powermanagement ICs

1-2

ISC017N04NM5
RDS(on)=1.7 mΩ
ISC019N04NM5
RDS(on)=1.9 mΩ

IPD023N04NF2S
RDS(on) = 2.3 mΩ

IRFB7440PBF
RDS(on) = 2.5 mΩ

IRFH7440TRPBFRDS(on) =2.4 mΩ

IPD029N04NF2S
RDS(on) = 2.9 mΩ

WBG semiconductors

2-4Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

BSZ065N03LSRDS(on)=6.5 mΩ

Microcontrollers

4-10

ISC028N04NM5
RDS(on)=2.8 mΩ
ISC046N04NM5
RDS(on)=4.6 mΩ

4-10

Sensors

ISC058N04NM5
RDS(on)=5.8 mΩ

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Schottky-like diode*** RDS(on), max. at VGS=4.5 V**** Normal level

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141Solutions

Product portfolio

OptiMOS™ and StrongIRFET™ 40 V logic level
TO-263(D2PAK)PQFN 5x6
Source-Down

PQFN 2x2

IQDH45N04LM6CG
RDS(on) = 0.45 mΩ

<1

PQFN 5x6
Source-Down
DSC (dual-side
cooling)

PQFN 3.3x3.3
Source-Down
DSC (dual-side
cooling)

SuperSO8

SuperSO8
dual-sidecooling (DSC)

IQDH45N04LM6SC
RDS(on)=0.45 mΩ

ISCH42N04LM7
RDS(on)=0.42 mΩ

BSC007N04LS6SC
RDS(on) =0.7 mΩ

IQDH45N04LM6CGSC
RDS(on)=0.45mΩ

BSC007N04LS6
RDS(on)=0.7 mΩ

BSC009N04LSSC
RDS(on) = 0.94 mΩ

IRL40S212
RDS(on) =1.9 mΩ

PQFN 3.3x3.3
Source-Down

IQE013N04LM6
RDS(on) = 1.35 mΩ

IQE013N04LM6CGSC*RDS(on) = 1.35 mΩ

IQE013N04LM6CG
RDS(on) = 1.35 mΩ

IQE013N04LM6SC*
RDS(on) = 1.35 mΩ

PQFN 3.3x3.3

500-950 V MOSFETs

RDS(on), max.
at VGS=10 V[mΩ]

BSC010N04LS6
RDS(on) =1.0 mΩ
BSC010N04LSIRDS(on) =1.05 mΩ
ISC012N04LM6
RDS(on) =1.2 mΩ

1-2Gate-driver ICs

BSC014N04LS
RDS(on) =1.4 mΩ
BSZ018N04LS6
RDS(on)=1.8 mΩ

BSC014N04LSIRDS(on) =1.45 mΩ
BSC019N04LS
RDS(on) =1.9 mΩ

Digital isolators

BSZ021N04LS6
RDS(on) =2.1 mΩ
BSZ024N04LS6
RDS(on) =2.4 mΩ
BSC026N04LS
RDS(on) =2.6 mΩ

2-4

IGBT discretes andsilicon power diodes

BSZ028N04LS
RDS(on) =2.8 mΩ
BSZ034N04LS
RDS(on) =3.4 mΩ

BSC032N04LS
RDS(on) =3.2 mΩ

ISK057N04LM6
RDS(on) = 5.75 mΩ

Intelligent powerswitches and modules

BSZ063N04LS6
RDS(on) =6.3 mΩ

4-10

15-300 V MOSFETs

Applicationsw

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

BSC059N04LS6
RDS(on) =5.9 mΩ

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142

TO-263(D2PAK)

TO-263(D2PAK 7-pin)

TO-262(I2PAK)PQFN 5x6
Source-Down

TO-220TO-220
FullPAKTO-247

SuperSO8
DSC (dual sidecooling)

IQD009N06NM5CG
RDS(on) = 0.9 mΩ

>1

IQD009N06NM5
RDS(on) = 0.9 mΩ

500-950 V MOSFETs

IPB010N06N 1)
RDS(on) =1.0 mΩ
IPF010N06NF2S
RDS(on) = 1.05 mΩ
IPF012N06NF2S
RDS(on) = 1.2 mΩ
IPB013N06NF2S
RDS(on) = 1.3 mΩ

IPB014N06N
RDS(on) = 1.4 mΩ

1-2

IPP014N06NF2S
RDS(on)=1.4 mΩ

BSC014N06NSSC
RDS(on) = 1.4 mΩ

IPP016N06NF2S
RDS(on)=1.6 mΩ

BSC016N06NSSC
RDS(on) = 1.6 mΩ

Digital isolators

IPP019N06NF2S
RDS(on)=1.9 mΩ
IPB015N06NF2S
RDS(on) = 1.5 mΩ
IPF016N06NF2S
RDS(on) = 1.7 mΩ
IPB018N06NF2S
RDS(on) = 1.8 mΩ
IRFP7530PBF
RDS(on) =2.0 mΩ

IPP020N06N 1)
RDS(on) =2.0 mΩ

BSC028N06NSSC
RDS(on) = 2.8 mΩ

IPD025N06N 1)
RDS(on) =2.5 mΩ

IPB026N06N 1)
RDS(on) =2.6 mΩ

IPP029N06N 1)
RDS(on) =2.9 mΩ
IPA029N06N 1)
RDS(on) =2.9 mΩ

IPB029N06NF2S
RDS(on) = 2.9 mΩ

2-4Intelligent powerswitches and modules

IPI029N06N 1)
RDS(on) =2.9 mΩ

IPD028N06NF2S
RDS(on) = 2.85 mΩ

Microcontrollers

IPP030N06NF2S
RDS(on)=3.05 mΩ
IPD033N06N 1)
RDS(on)=3.3 mΩ
IPD038N06NF2S
RDS(on) = 3.85 mΩ

IRFS7537TRLPBFRDS(on) =3.3 mΩ

IPP040N06NF2S
RDS(on)=4.00 mΩ

IRFP7537PBF
RDS(on) =3.3 mΩ

USB-C controllers
and peripherals

IPA040N06N 1)
RDS(on) =4.0 mΩ
IPP040N06N 1)
RDS(on) =4.0 mΩ
IPD053N06N 1)
RDS(on) =5.3 mΩ
IPB057N06N 1)
RDS(on) =5.7 mΩ

IRFB7545PBF
RDS(on) =5.9 mΩ

Powermanagement ICs

4-10

IPA060N06N 1)
RDS(on) =6.0 mΩ

Sensors

WBG semiconductors

IRFR7546TRPBFRDS(on) =7.9 mΩ

Gate-driver ICs

TO-252(DPAK)IGBT discretes andsilicon power diodes

RDS(on), max.
at VGS=10 V[mΩ]

15-300 V MOSFETs

OptiMOS™ and StrongIRFET™ 60 V normal level

Applications

Solutions

Product portfolio

Click here to learn more:

1) 6 V rated (RDS(on) also specified at VGS=6 V)

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143

Applications

Solutions

Product portfolio

OptiMOS™ and StrongIRFET™ 60 V normal level
PQFN 3.3x3.3
Source-Down

PQFN 3.3x3.3
Source-Down
DSC (dual-side
cooling)

PQFN 5x6
Source-Downdual-side cooling
(DSC)

SO8

SuperSO8

IQD009N06NM5SC
RDS(on)=0.9 mΩ

<1

TOLT
IPTC007N06NM5
RDS(on) = 0.7 mΩ

TO-Leadless
IPT007N06N 1)
RDS(on) =0.7 mΩ

sTOLL
IST011N06NM5
RDS(on) = 1.1 mΩ

IQD009N06NM5CGSC
RDS(on)=0.9 mΩ
ISC010N06NM5
RDS(on) =1.05 mΩ
BSC012N06NS
RDS(on) =1.2 mΩ

1-2

IPTC012N06NM5
RDS(on) = 1.2 mΩ

IST015N06NM5
RDS(on) = 1.5 mΩ
IPT012N06N 1)
RDS(on) =1.2 mΩ
IPT008N06NM5LF
RDS(on) = 0.8 mΩ

IQE030N06NM5CG
RDS(on) = 3 mΩ

IQE030N06NM5CGSC *RDS(on)=3.0 mΩ

BSC028N06NS 1)
RDS(on) =2.8 mΩ

IQE030N06NM5
RDS(on) = 3 mΩ

IQE030N06NM5SC *RDS(on)=3.0 mΩ

ISC0702NLSRDS(on)=2.8 mΩ

Gate-driver ICs

BSC019N06NS 1)
RDS(on) =1.9 mΩ

Digital isolators

BSC034N06NS 1)
RDS(on) =3.4 mΩ
BSC039N06NS 1)
RDS(on) =3.9 mΩ

2-4

BSZ042N06NS 1)
RDS(on) =4.2 mΩ

IRF7855TRPBFRDS(on)=9.4 mΩ

IRFH7545TRPBFRDS(on) =5.2 mΩ

IGBT discretes andsilicon power diodes

BSC066N06NS 1)
RDS(on) =6.6 mΩ
BSZ068N06NS 1)
RDS(on) =6.8 mΩ
BSZ100N06NS 1)
RDS(on) =10.0 mΩ

BSC155N06ND
RDS(on) =15.5 mΩ

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

IRF7351TRPBFRDS(on) =17.8 mΩ

Intelligent powerswitches and modules

BSC097N06NS 1)
RDS(on) =9.7 mΩ

5-20

15-300 V MOSFETs

PQFN 3.3x3.3

500-950 V MOSFETs

RDS(on), max.
at VGS=10 V[mΩ]

Click here to learn more:

1) 6 V rated (RDS(on) also specified at VGS = 6 V)

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Applications

Solutions

Product portfolio

OptiMOS™ and StrongIRFET™ 60 V logic level

IQDH88N06LM5CG
RDS(on) = 0.88 mΩ

IQDH88N06LM5SC*

IQDH88N06LM5
RDS(on) = 0.88 mΩ

IQDH88N06LM5CGSC*
Rds(on)=0.86 mΩ

PQFN 3.3x3.3
Source-Down

TO-263(D2PAK 7-pin)

TO-220

PQFN 2x2

PQFN 3.3x3.3

SuperSO8
ISC009N06LM5
RDS(on) = 0.9 mΩ

Rds(on)=0.86 mΩ

ISC011N06LM5
RDS(on) = 1.1 mΩ
IRLS3036TRL7PP
RDS(on) =1.9 mΩ

1-2

ISC015N06NM5LF 1)
RDS(on) = 1.5 mΩ

IRLS3036TRL7PP
RDS(on) =1.9 mΩ
IQE022N06LM5
RDS(on) = 2.2 mΩ

ISZ034N06LM5
RDS(on) = 3.4 mΩ
IRLB3036PBF
RDS(on) =2.4 mΩ

BSC027N06LS5
RDS(on) =2.7 mΩ

IQE022N06LM5CG
RDS(on) = 2.2 mΩ

2-4

IQE022N06LM5SC
RDS(on) = 2.2 mΩ
IQE022N06LM5CGSC
RDS(on) = 2.2 mΩ
BSZ040N06LS5
RDS(on) =4.0 mΩ

BSC065N06LS5
RDS(on)=6.5 mΩ

IRLR3636TRPBFRDS(on) =6.8 mΩ

BSZ065N06LS5
RDS(on) =6.5 mΩ

BSC094N06LS5
RDS(on) =9.4 mΩ

IPD079N06L3 G
RDS(on) = 7.9 mΩ

BSZ099N06LS5
RDS(on) =9.9 mΩ

IGBT discretes andsilicon power diodes

4-10

IPD048N06L3 G
RDS(on) = 4.8 mΩ

IPD088N06N3 G
RDS(on) = 8.8 mΩ
IPD220N06L3 G
RDS(on) = 22 mΩ

IRL60HS118
RDS(on)=17.0 mΩ

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules>1015-300 V MOSFETs

PQFN 5x6 SourceDown dual-side
cooling (DSC)

500-950 V MOSFETs<1

PQFN 5x6
Source-Down

Gate-driver ICs

TO-252(DPAK)

Digital isolators

RDS(on), max.
at VGS=10 V[mΩ]

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Applications

Solutions

Product portfolio

OptiMOS™ and StrongIRFET™ 75 V normal level
TO-252(DPAK)

TO-263(D²PAK)

TO-263(D²PAK 7-pin)

TO-220TO-24720-300 V MOSFETs

RDS(on), max.
at VGS=10 V[mΩ]

IRFS7730TRL7PP
RDS(on) =2.0 mΩ

1-2

IRFP4368PBF
RDS(on) =1.85 mΩ

500-950 V MOSFETs

IRFP3077PBF
RDS(on) =3.3 mΩ

IRFS7730TRLPBFRDS(on) =2.6 mΩ
IRFB7730PBF
RDS(on) =2.6 mΩ

2-4

IRFB7734PBF
RDS(on) =3.5 mΩ
5-10

Gate-driver ICs

IRFB3307ZPBFRDS(on) =5.8 mΩ
IRFS3607TRLPBFRDS(on)=9.0 mΩ

Digital isolators

IRFR3607PBF
RDS(on) =9.0 mΩ

TO-263(D²PAK)

IPB016N08NF2S
RDS(on) = 1.65 mΩ

1-2
IPB019N08NF2S
RDS(on) = 1.95 mΩ

TO-263(D²PAK 7-pin)

TO-220

IPB015N08N5
RDS(on) =1.5 mΩ

IPP016N08NF2S
RDS(on)=1.6 mΩ

IPF014N08NF2S
RDS(on) = 1.4 mΩ

IPP019N08NF2S
RDS(on)=1.9 mΩ

TO-220
FullPAKSuperSO8 DSC(dual-side
cooling)

PQFN 5x6
Source-Down

PQFN 5x6
Source-Downdual-sidecooling (DSC)

IQD016N08NM5CG
RDS(on) = 1.6 mΩ

IQD016N08NM5SC*
RDS(on)=1.57 mΩ

IQD016N08NM5
RDS(on) = 1.6 mΩ

IQD016N08NM5CGSC*RDS(on)=1.57 mΩ

PQFN 3.3x3.3
Source-Down

PQFN 2x2

PQFN 3.3x3.3

SuperSO8

TO-LeadlessIntelligent powerswitches and modules

TO-252(DPAK)

IPT010N08NM5
RDS(on)=1.0 mΩ

IPF017N08NF2S
RDS(on) = 1.7 mΩ

IPT012N08N5
RDS(on) =1.2 mΩ

Microcontrollers

RDS(on), max.
at VGS=10 V[mΩ]

IGBT discretes andsilicon power diodes

OptiMOS™ and StrongIRFET™ 80 V normal level/logic level

IPT012N08NF2S
RDS(on) = 1.23 mΩ

IPB024N08NF2S
RDS(on) = 2.4 mΩ

2-4

IPB019N08N5
RDS(on) =1.95 mΩ

IPP024N08NF2S
RDS(on)=2.4 mΩ

BSC023N08NS5SC
RDS(on) = 2.3 mΩ

IPF023N08NF2S
RDS(on) = 2.3 mΩ

IPP023N08N5
RDS(on) =2.3 mΩ

BSC033N08NS5SC
RDS(on) = 3.3 mΩ

IPT013N08NM5LF
RDS(on) = 1.3 mΩ

IPF039N08NF2S
RDS(on) = 3.9 mΩ

BSC025N08LS5
RDS(on) =2.5 mΩ

IPT014N08NM5
RDS(on)=1.4 mΩ

BSC026N08NS5
RDS(on) =2.6 mΩ

IPT019N08N5
RDS(on) =1.9 mΩ

USB-C controllers
and peripherals

IPB020N08N5
RDS(on) =2.0 mΩ

IPP034N08N5
RDS(on) =3.4 mΩ

IPB040N08NF2S
RDS(on) = 4 mΩ

IPP040N08NF2S
RDS(on)=4.0 mΩ

IPB049N08N5
RDS(on) =4.9 mΩ
IPD040N08NF2S
RDS(on) = 4 mΩIPB055N08NF2S
RDS(on) = 5.5 mΩ

IPD055N08NF2S
RDS(on) = 5.5 mΩ

4-10

IPA052N08NM5S
RDS(on) =5.2 mΩ
IPP055N08NF2S
RDS(on)=5.5 mΩ

IQE046N08LM5
RDS(on) = 4.6 mΩ

BSC037N08NS5
RDS(on) =3.7 mΩ

IQE046N08LM5CG
RDS(on) = 4.6 mΩ

BSC040N08NS5
RDS(on) =4.0 mΩ

IQE046N08LM5SC
RDS(on) = 4.6 mΩ

BSC052N08NS5
RDS(on) =5.2 mΩ

IQE046N08LM5CGSC
RDS(on) = 4.6 mΩ

BSZ070N08LS5
RDS(on) =7.0 mΩ
BSZ075N08NS5
RDS(on) =7.5 mΩ

WBG semiconductors

IPB031N08N5
RDS(on) =3.1 mΩ

Powermanagement ICs

BSC030N08NS5
RDS(on) =3.0 mΩ

BSC061N08NS5
RDS(on) =6.1 mΩ
BSC072N08NS5
RDS(on) =7.2 mΩ

BSZ084N08NS5
RDS(on) =8.4 mΩ

IRL80HS120
RDS(on)=32.0 mΩ

Sensors

BSC117N08NS5
RDS(on) =11.7 mΩ

>10

BSZ110N08NS5
RDS(on) =11.0 mΩ

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Applications

Solutions

Product portfolio

OptiMOS™ and StrongIRFET™ 80 V normal level/logic level

IPTC011N08NM5
RDS(on)= 1.2 mΩ

PQFN 3.3x3.3
Source-Down DSC(dual-side cooling)

PQFN 3.3x3.3
Source-Down

sTOLL

SuperSO8
15-300 V MOSFETs

1-2

TOLT
(TO-Leaded top-side cooling)

IST019N08NM5
RDS(on) = 1.9 mΩ

IPTC014N08NM5
RDS(on) = 1.4 mΩ

3-5

IQE050N08NM5
RDS(on) = 5 mΩ

IQE050N08NM5SC
RDS(on) = 5 mΩ

IQE050N08NM5CG
RDS(on) = 5 mΩ

IQE050N08NM5CGSC
RDS(on) = 5 mΩ

500-950 V MOSFETs

RDS(on), max.
at VGS=10 V[mΩ]

IRF7854TRPBFRDS(on) = 13.4 mΩ

Gate-driver ICs

5-20

RDS(on), max.
at VGS=10 V[mΩ]

TO-252(DPAK)

TO-263(D²PAK)

TO-263(D²PAK 7-pin)

TO-220TO-220
FullPAKDigital isolators

OptiMOS™ and StrongIRFET™ 100 V normal level
TO-247
IRF100P218
RDS(on)=1.1 mΩ
1-2

IGBT discretes andsilicon power diodes

IRF100P219
RDS(on)=2.1 mΩ

IPF016N10NF2S
RDS(on) =1.6 mΩ
IPB017N10N5RDS(on) =1.7 mΩ
IPB017N10N5LF
RDS(on)=1.7 mΩ

IPB020N10N5LF
RDS(on)=2.0 mΩ

IPB024N10N5RDS(on) =2.4 mΩ

IPP026N10NF2S
RDS(on)=2.6 mΩ

IPB026N10NF2S
RDS(on) = 2.65 mΩ

IPB032N10N5RDS(on) =3.2 mΩ

IPP030N10N5RDS(on)=3.0 mΩ

IRFP4468PBF
RDS(on) =2.6 mΩ

IPP039N10N5RDS(on)=3.9 mΩ

IPB027N10N5RDS(on) =2.7 mΩ
IPD050N10N5RDS(on)=5.0 mΩ

IPB033N10N5LF
RDS(on) =3.3 mΩ

IPF042N10NF2S
RDS(on) = 4.25 mΩ

IPD052N10NF2S
RDS(on) = 5.2 mΩ

IPB043N10NF2S
RDS(on) = 4.35 mΩ

IPF050N10NF2S
RDS(on) = 5.05 mΩ

Microcontrollers

2-4

IPA030N10NF2S
RDS(on)=3.0 mΩ

Intelligent powerswitches and modules

IPP023N10N5RDS(on) =2.3 mΩ

IPB020N10N5RDS(on) =2.0 mΩ

IRFP4110PBF
RDS(on) =4.5 mΩ
IRFB4110PBF
RDS(on) =4.5 mΩ

IRFP4310ZPBFRDS(on) =6.0 mΩ

IPA082N10NF2S
RDS(on)=8.2 mΩ

IPB050N10NF2S
RDS(on) = 5.05 mΩ

4-10

IRFS4310ZTRLPBFRDS(on) =7.0 mΩ

USB-C controllers
and peripherals

IPP050N10NF2S
RDS(on)=5.0 mΩ

IPP082N10NF2S
RDS(on)=8.2 mΩ

IPA083N10N5RDS(on) =8.3 mΩ

Powermanagement ICs

IPP083N10N5RDS(on) =8.3 mΩ
IRFB4410ZPBFRDS(on) =9.0 mΩ

>25

IPD78CN10N G
RDS(on) =78.0 mΩ

IPP129N10NF2S
RDS(on)=12.9 mΩ

WBG semiconductors

IPD130N10NF2S
RDS(on) = 13.0 mΩ

Sensors

10-25

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147

Applications

Solutions

Product portfolio

OptiMOS™ and StrongIRFET™ 100 V normal level
PQFN 3.3x3.3
Source-Down

PQFN 3.3x3.3
Source-Down
DSC (dual-side
cooling)

PQFN 5x6
Source-Down

PQFN 5x6
Source-Down DSC(dual-side cooling)

SuperSO8

SuperSO8 DSC(dual-side
cooling)

TOLL(TO-Leadless)

SO8

ISZ080N10NM6
RDS(on)= 8.0 mΩ

1-2

IQD020N10NM5CGSC
RDS(on) = 2.0 mΩ

IQD020N10NM5SC*
RDS(on) =2.05 mΩ

IQD020N10NM5
RDS(on) = 2.05 mΩ

IQD020N10NM5CGSC*RDS(on) =2.05 mΩ

TOLT(TO-Leaded
top-side cooling)

TOLG(TO-Leaded
Gullwing)

IPTC015N10NM5
RDS(on) = 1.5 mΩ

PTG014N10NM5
RDS(on) = 1.4 mΩ

ISC022N10NM6
RDS(on)= 2.2 mΩ

IPT015N10N5RDS(on) =1.5 mΩ

IPTG018N10NM5
RDS(on) = 1.8 mΩ

ISC027N10NM6
RDS(on)= 2.7 mΩ

IPT015N10NF2S
RDS(on) = 1.5 mΩ

IPTG025N10NM5
RDS(on) = 2.5 mΩ

ISC030N10NM6
RDS(on)= 3.0 mΩ

IPT017N10NF2S
RDS(on) = 1.75 mΩ
BSC030N10NS5SC
RDS(on) = 3.0 mΩ

sTOLL
20-300 V MOSFETs

PQFN 3.3x3.3

500-950 V MOSFETs

DirectFET™

IPTC019N10NM5
RDS(on) = 1.9 mΩ

IPT020N10N5RDS(on) =2.0 mΩ
IPT022N10NF2S
RDS(on) = 2.25 mΩ

Gate-driver ICs

RDS(on), max.
at VGS=10 V
[mΩ]

2-4
IRF7769L1TRPBFRDS(on) =3.5 mΩ

BSC040N10NS5SC
RDS(on) =4.0 mΩ

IPT026N10N5RDS(on) =2.6 mΩ

IST026N10NM5
RDS(on) = 2.6 mΩ

Digital isolators

BSC040N10NS5
RDS(on) =4.0 mΩ
BSC050N10N5RDS(on) =5.0 mΩ
ISC060N10NM6
RDS(on)= 6.0 mΩ
BSC070N10NS5SC
RDS(on) =7.0 mΩ

IGBT discretes andsilicon power diodes

BSC070N10NS5
RDS(on) =7.0 mΩ

4-10

ISC080N10NM6
RDS(on)= 8.0 mΩ
ISZ113N10NM5LF2
RDS(on) =11.3 mΩ
ISZ230N10NM6
RDS(on)= 23.0 mΩ
ISC230N10NM6
RDS(on) =23.0 mΩ

Intelligent powerswitches and modules

10-25

IRF6644TRPBFRDS(on) =13.0 mΩ

BSC098N10NS5
RDS(on) =9.8 mΩ

IRF7853TRPBFRDS(on) =18.0 mΩ

Microcontrollers

IRF6645TRPBFRDS(on) =35.0 mΩ

>25

RDS(on), max.
at VGS=10 V[mΩ]

TO-252(DPAK)

TO-263(D2PAK)

TO-220

PQFN 2x2

PQFN 3.3x3.3

USB-C controllers
and peripherals

OptiMOS™ and StrongIRFET™ 100 V logic level
SuperSO8
BSC034N10LS5
RDS(on) =3.4 mΩ
BSZ096N10LS5
RDS(on) =9.6 mΩ

IRLB4030PBF
RDS(on) =4.3 mΩ

4-10

BSC070N10LS5
RDS(on)=7.0 mΩ

Powermanagement ICs

1-4

BSC096N10LS5
RDS(on)=9.6 mΩ
BSZ146N10LS5
RDS(on) =14.6 mΩ
BSC146N10LS5
RDS(on) =14.6 mΩ

Sensors

IRLR3110ZTRPBFRDS(on) =14.0 mΩ

WBG semiconductors

10-25

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148

Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes

TO-263(D²PAK 7-pin)

1-2

IPF019N12NM6
RDS(on) = 1.9 mΩ

PQFN 3.3x3.3

SuperSO8

TO-220TO-263(D2PAK)

TOLG(TO-Leaded
Gullwing)

TOLL(TO-Leadless)

IPTG017N12NM6
RDS(on) = 1.7 mΩ
ISC030N12NM6
RDS(on) = 3.04 mΩ
ISC032N12LM6
RDS(on) = 3.2 mΩ

2-4

IPP022N12NM6*
RDS(on) = 2.2 mΩ

IPB022N12NM6*
RDS(on) = 2.2 mΩ

TOLT(TO-Leaded
top-side Cooling)
IPTC017N12NM6
RDS(on) = 1.7 mΩ

IPT017N12NM6
RDS(on) = 1.7 mΩ

IPTC028N12NM6*
RDS(on) = 2.8 mΩ

IPB035N12NM6*
RDS(on) = 3.5 mΩ

USB-C controllers
and peripherals

ISC037N12NM6
RDS(on) = 3.7 mΩ
ISC073N12LM6
RDS(on) = 7.3 mΩ
ISC078N12NM6
RDS(on) = 7.8 mΩ

4-10

10-25

ISC104N12LM6
RDS(on) = 10.4 mΩ

ISZ330N12LM6
RDS(on) = 33.0 mΩ

ISC110N12NM6
RDS(on) =11.0 mΩ

Powermanagement ICs

BSC080N12LS
RDS(on) = 8.0 mΩ
ISZ106N12LM6
RDS(on) = 10.6 mΩ

Intelligent powerswitches and modules

RDS(on), max.
at VGS=10 V[mΩ]

Microcontrollers

OptiMOS™ and StrongIRFET™ 120 V normal level/logic level

IPB133N12NM6*
RDS(on) = 13.3 mΩ

WBG semiconductors

BSC120N12LS
RDS(on) =12.0 mΩ

Sensors

ISC320N12LM6
RDS(on) = 32.0 mΩ

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PQFN 3.3x3.3

PQFN 5x6
Source-Down

PQFN 5x6
Source-Down DSC(dual-side cooling)

SuperSO8 DSC(dual-side cooling)

IQD063N15NM5CGSC
RDS(on) = 6.3 mΩ

IQD063N15NM5SC*
RDS(on) =6.32 mΩ

BSC093N15NS5SC
RDS(on) = 9.3 mΩ

IQD063N15NM5CGSC*RDS(on) =6.32 mΩ

1-10

SuperSO8

TOLL(TO-Leadless)

ISC037N13NM6
RDS(on) =3.7 mΩ

IPT020N13NM6
RDS(on) = 2.0 mΩ

ISC044N15NM6
RDS(on)= 4.4 mΩ

IPT025N15NM6*
RDS(on)= 2.5 mΩ

ISC055N15NM6
RDS(on)= 5.5 mΩ

IPT039N15N5
RDS(on) = 3.9 mΩ

ISC079N15NM6
RDS(on)= 7.9 mΩ

IPT044N15N5
RDS(on) = 4.4 mΩ

ISC046N13NM6
RDS(on) =4.6 mΩ

IPT054N15N5
RDS(on) = 5.4 mΩ

BSC074N15NS5 2)
RDS(on) =7.4 mΩ

IPT063N15N5
RDS(on) = 6.3 mΩ

500-950 V MOSFETs

DirectFET™

Gate-driver ICs

BSC088N15LS5
RDS(on)= 8.8 mΩ

10-25

IRF7779L2TRPBF 2)
RDS(on) =11.0 mΩ

ISZ143N13NM6
RDS(on) =14.3 mΩ

BSC110N15NS5SC
RDS(on) = 11.0 mΩ

BSC105N15LS5
RDS(on)= 10.5 mΩ

IRF150DM115
RDS(on) = 11.3 mΩ

ISZ173N15NM6*
RDS(on) = 17.3 mΩ

BSC160N15NS5SC
RDS(on) = 16.0 mΩ

BSC152N15LS5
RDS(on)= 15.2 mΩ

Digital isolators

BSC093N15NS5
RDS(on) =9.3 mΩ

BSC110N15NS5
RDS(on) =11.0 mΩ
BSC160N15NS5
RDS(on) =16.0 mΩ
IRF6775MTRPBFRDS(on) =56.0 mΩ

IGBT discretes andsilicon power diodes

>25

TOLT
(TO-Leaded
top-side cooling)

TOLG(TO-Leaded
Gullwing)

TO-220

IPTC020N13NM6
RDS(on) = 2.0 mΩ

IPTG020N13NM6
RDS(on) = 2.0 mΩ

IPP029N15NM6*
RDS(on)= 2.9 mΩ

IRF150P220
RDS(on)=2.5 mΩ

IPF026N15NM6*
RDS(on)= 2.6 mΩ

IPTC025N15NM6
RDS(on)= 2.5 mΩ

IPTG025N15NM6*
RDS(on)= 2.5 mΩ

IPP051N15N5 2)
RDS(on)=5.1 mΩ

IRF150P221
RDS(on)=4.8 mΩ

IPF031N13NM6
RDS(on)= 3.1 mΩ

IPTC039N15NM5
RDS(on) = 3.9 mΩ

IPTG029N13NM6
RDS(on) = 2.9 mΩ

IPP073N13NM6
RDS(on)=7.3 mΩ

IRFP4568PBF
RDS(on) =5.9 mΩ

IPTC044N15NM5
RDS(on) = 4.4 mΩ

IPTG039N15NM5
RDS(on) = 3.9 mΩ

IPP076N15N5
RDS(on)=7.6 mΩ

Microcontrollers

IPB060N15N5
RDS(on)=6.0 mΩ

IPTC054N15NM5
RDS(on) = 5.4 mΩ

IPTG044N15NM5
RDS(on) = 4.4 mΩ

IPP089N15NM6*
RDS(on)= 8.9 mΩ

IPB073N15N5
RDS(on)=7.3 mΩ

IPTC063N15NM5
RDS(on) = 6.3 mΩ

IPTG054N15NM5
RDS(on) = 5.4 mΩ

IRFP4321PBF
RDS(on) =15.5 mΩ

TO-252(DPAK)

TO-263(D2PAK)

TO-263(D²PAK 7-pin)

TO-262(I2PAK)

IPB029N15NM6*
RDS(on)= 2.9 mΩ

IPF021N13NM6
RDS(on)= 2.1 mΩ

IPI051N15N5
RDS(on)=5.1 mΩ

IPB044N15N5
RDS(on)=4.4 mΩ
IPB048N15N5
RDS(on)=4.8 mΩ
IPB048N15N5LF
RDS(on)=4.8 mΩ

1-10

IPI076N15N5
RDS(on)=7.6 mΩ

TO-247

USB-C controllers
and peripherals

RDS(on), max.
at VGS=10 V
[mΩ]

Power
management ICs

OptiMOS™ and StrongIRFET™ 135-150 V normal/logic level

IPTG063N15NM5
RDS(on) = 6.3 mΩ
IRFB4115PBF
RDS(on) =11.0 mΩ
IRFB4321PBF
RDS(on) =15.0 mΩ

IRFS4321TRLPBFRDS(on) =15.0 mΩ

10-25

WBG semiconductors

IRFS4115TRLPBFRDS(on) =12.1 mΩ

IRFS4615TRLPBFRDS(on) =42.0 mΩ
IRFB5615PBF
RDS(on) =39.0 mΩ

IRFR4615TRLPBFRDS(on) =42.0 mΩ

Sensors>25

Intelligent powerswitches and modules

RDS(on), max.
at VGS=10 V[mΩ]

15-300 V MOSFETs

OptiMOS™ and StrongIRFET™ 135-150 V normal/logic level

Applications

Solutions

Product portfolio

IRFB4019PBF
RDS(on) =95.0 mΩ

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Solutions

Product portfolio

TO-252(DPAK)

TO-263(D2PAK)
IPB068N20NM6
RDS(on) = 6.8 mΩ

4-10

TO-263(D²PAK 7-pin)
IPF067N20NM6
RDS(on) = 6.7 mΩ

TO-220
IPP069N20NM6
RDS(on) = 6.9 mΩ

TO-247
IRF200P222
RDS(on)=6.6 mΩ

IPB107N20N3 G
RDS(on) =10.7 mΩ

IPF129N20NM6
RDS(on)= 12.9 mΩ

IPP110N20N3 G
RDS(on) =11.0 mΩ
IRFB4127PBF
RDS(on) =20.0 mΩ

10-25

500-950 V MOSFETs

IRFP4668PBF
RDS(on) =9.7 mΩ

IRFP4227PBF
RDS(on) =25.0 mΩ

Gate-driver ICs

IRFS4127TRLPBFRDS(on) =22.0 mΩ

IPD320N20N3 G
RDS(on) =32.0 mΩ
>25

IRFR4620TRLPBFRDS(on) =78.0 mΩ

IPB320N20N3 G
RDS(on) =32.0 mΩ

IPP319N20NM6 1)
RDS(on) = 31.9 mΩ

IPB339N20NM6
RDS(on)= 33.9 mΩ

IPP320N20N3 G
RDS(on) =32.0 mΩ

IRFS4620TRLPBFRDS(on) =78.0 mΩ

IPP339N20NM6
RDS(on)= 33.9 mΩ

Digital isolators

IRFB4227PBF
RDS(on) =26.0 mΩ

IRFB5620PBF
RDS(on) =72.5 mΩ

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

IRFB4020PBF
RDS(on) =100.0 mΩ

OptiMOS™ and StrongIRFET™ 200 V normal level
DirectFET™

PQFN 3.3x3.3

TOLL(TO-Leadless)SuperSO8
ISC119N20NM6*
RDS(on) = 11.9 mΩ

IPT067N20NM6
RDS(on) = 6.7 mΩ
IPTG111N20NM3FDRDS(on) = 11.1 mΩ

ISC130N20NM6
RDS(on)= 13.0 mΩ

1-25

ISC151N20NM6
RDS(on) = 15.1 mΩ

TOLG(TO-Leaded Gullwing)

USB-C controllers
and peripherals

RDS(on), max.
at VGS=10 V[mΩ]

IPT129N20NM6
RDS(on) = 12.9 mΩ

BSC320N20NS3 G
RDS(on) =32.0 mΩ

BSZ900N20NS3 G
RDS(on) =90.0 mΩ

BSC900N20NS3 G
RDS(on) =90.0 mΩ

WBG semiconductors>25

IRFH5020TRPBFRDS(on) =55.0 mΩ

Powermanagement ICs

BSC500N20NS3G
RDS(on) =50.0 mΩ
ISZ520N20NM6
RDS(on) = 52.0 mΩ

Microcontrollers

RDS(on), max.
at VGS=10 V[mΩ]

15-300 V MOSFETs

OptiMOS™ and StrongIRFET™ 200 V normal level

IRF6785MTRPBFRDS(on) =100.0 mΩ

Sensors

BSZ22DN20NS3 G
RDS(on) =225.0 mΩ

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151

RDS(on), max.
at VGS=10 V[mΩ]

TO-252(DPAK)TOLG(TO-Leaded
Gullwing)

TO-263(D2PAK)
IPB200N25N3 G
RDS(on) =20.0 mΩ

TO-220TO-247

IPTG210N25NM3FDRDS(on) = 21.0 mΩ

SuperSO8

TOLL(TO-Leadless)

IRF250P224
RDS(on)=12.0 mΩ
IPP220N25NFD
RDS(on) =22.0 mΩ

10-25

PQFN 3.3x3.3

IRFP4768PBF
RDS(on) =17.5 mΩ

IPT210N25NFD
RDS(on)=21.0 mΩ

500-950 V MOSFETs

IRF250P225
RDS(on)=22.0 mΩ
BSC430N25NSFD
RDS(on)=43.0 mΩ

IPD600N25N3 G
RDS(on) =60.0 mΩ

IRFB4332PBF
RDS(on) =33.0 mΩ

IPB600N25N3 G
RDS(on) =60.0 mΩ

IRFB4229PBFRDS(on) =46.0 mΩ
IPP600N25N3 G
RDS(on) =60.0 mΩ

IRFP4332PBF
RDS(on) =33.0 mΩ

BSC600N25NS3 G
RDS(on) =60.0 mΩ
BSC670N25NSFD
RDS(on)=67.0 mΩ

IRFP4229PBFRDS(on) =46.0 mΩ

Gate-driver ICs>25

IRFS4229TRLPBFRDS(on) =48.0 mΩ

BSZ16DN25NS3 G
RDS(on) =165.0 mΩ
BSC16DN25NS3 G
RDS(on) =165.0 mΩ

Digital isolators

BSZ42DN25NS3 G
RDS(on) =425.0 mΩ

15-300 V MOSFETs

OptiMOS™ and StrongIRFET™ 250 V normal level

Applications

Solutions

Product portfolio

IGBT discretes andsilicon power diodes

OptiMOS™ and StrongIRFET™ 300 V
normal level
TO-220TO-247

SuperSO8Intelligent powerswitches and modules

RDS(on), max.
at VGS=10 V[mΩ]

IRF300P226
RDS(on)=19.0 mΩ

0-25
IPP410N30N
RDS(on) =41.0 mΩ

IRF300P227
RDS(on) = 40 mΩ

>25

USB-C controllers
and peripherals

Microcontrollers

BSC13DN30NSFD
RDS(on)=130.0 mΩ

Power MOSFETs complementary27-64 mΩPowermanagement ICs-30/30

BSZ15DC02KD H*/**
N: 55 mΩ, 5.1 A
P: 150 mΩ, -3.2 A
BSZ215C H*/**
N: 55 mΩ, 5.1 A
P: 150 mΩ, -3.2 A
IRF9389TRPBF
N: 27 mΩ, 6.8 A
P: 64 mΩ, -4.6 A

WBG semiconductors>50 mΩ

SO8

Sensors-20/20

PQFN 3.3x3.3

Click here to learn more:
www.infineon.com/powermosfet-12V-300V
www.infineon.com/optimos-strongirfet-packages*Products are qualified to Automotive AEC Q101**RDS(on) specified at 4.5 V

www.infineon.com/optimos6
www.infineon.com/optimos7

www.infineon.com/strongirfet2
www.infineon.com/smallsignal

SupportComplementary

Voltage[V]

152

Solutions

Product portfolio

SuperSO8

BSO201SP H
RDS(on) =7.0 mΩ

-20

IPD042P03L3 G
RDS(on) =4.2 mΩ

BSZ086P03NS3 G
RDS(on) =8.6 mΩ
BSZ086P03NS3E G
RDS(on) =8.6 mΩ

SPD50P03L G 1)*
RDS(on) =7.0 mΩ

BSZ120P03NS3 G
RDS(on) =12.0 mΩ

BSC030P03NS3 G
RDS(on) =3.0 mΩ
BSC060P03NS3E G
RDS(on) =6.0 mΩ; ESD
IRFH9310
RDS(on) =4.6 mΩ
BSC084P03NS3 G
RDS(on) =8.4 mΩ

-30

SPD04P10PL G*
RDS(on) =850.0 mΩ
IPD11DP10NM
RDS(on) =111 mΩ
IPD18DP10LM
RDS(on) = 178 mΩ
IPD19DP10NM
RDS(on) = 186 mΩ
IPD42DP15LM
RDS(on) = 420 mΩ

IPB19DP10NM
RDS(on) = 185 mΩ

SPP80P06P H*
RDS(on) =23.0 mΩ

ISZ810P06LM
RDS(on) = 81 mΩ

ISC240P06LM
RDS(on) = 24 mΩ
ISC800P06LM
RDS(on) = 80 mΩ

ISZ24DP10LM
RDS(on) = 245 mΩ

ISC750P10LM
RDS(on) =75 mΩ

ISZ56DP15LM
RDS(on) = 560 mΩ
ISZ75DP15LM
RDS(on) = 750 mΩ
ISZ15EP15LM
RDS(on) = 1500 mΩ

ISC16DP15LM
RDS(on) = 160 mΩ

BSO301SP H
RDS(on) =8.0 mΩ
IRF9388TRPBFRDS(on)=11.9 mΩ
IRF9358
RDS(on)=16 mΩ; dual´

IRF9362
RDS(on)=21 mΩ; dual
IRF9335
RDS(on)=59 mΩ

IRFHS9301TRPBFRDS(on) =37.0 mΩ

IPB320P10LM
RDS(on) = 32 mΩ
IPB330P10NM
RDS(on) = 33 mΩ

IPP330P10NM
RDS(on) =33 mΩ

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

IPB110P06LM
RDS(on)= 11 mΩ
SPB80P06P G*
RDS(on) =23.0 mΩ

IRLHS2242TRPBF**RDS(on) =31.0 mΩ

Powermanagement ICs-100

IPD380P06NM
RDS(on)= 38 mΩ
IPD650P06NM
RDS(on)= 65 mΩ
SPD30P06P G*
RDS(on) =75.0 mΩ
IPD900P06NM
RDS(on) = 90 mΩ
SPD18P06P G*
RDS(on) =130.0 mΩ
SPD09P06PL G*
RDS(on) =250.0 mΩ
IPD25DP06NM
RDS(on) = 250 mΩ
SPD08P06P G*
RDS(on) =300.0 mΩ
IPD40DP06NM
RDS(on) = 400 mΩ
SPD15P10PL G*
RDS(on) =200.0 mΩ
SPD15P10P G*
RDS(on) =240.0 mΩ

IRF9310RDS(on)=4.6 mΩ
IRF9317
RDS(on)=6.6 mΩ
IRF9321
RDS(on)=7.2 mΩ

PQFN 2x2

IPB720P15LM
RDS(on) = 72 mΩ

Sensors-150

WBG semiconductors

P-channel MOSFETs

BSZ180P03NS3 G
RDS(on) =18.0 mΩ
BSZ180P03NS3E G
RDS(on) =18.0 mΩ; ESD

-60

SO8

15-300 V MOSFETs

PQFN 3.3x3.3

500-950 V MOSFETs

TO-220Gate-driver ICs

TO-263(D2PAK)

Digital isolators

TO-252(DPAK)IGBT discretes andsilicon power diodes

Voltage[V]

Applications

Power P-channel MOSFETs

Click here to learn more:

1) 5-leg* Products are qualified to Automotive AEC Q101

www.infineon.com/optimos6
www.infineon.com/optimos7** RDS(on) specified at 4.5 V

www.infineon.com/strongirfet2
www.infineon.com/smallsignal

Supportwww.infineon.com/powermosfet-12V-300V
www.infineon.com/optimos-strongirfet-packages

153Product portfolio

SOT-223

TSOP-6

SOT-89SC59

BSL202SN 4)
36 mΩ, 7.5 A, SLL

BSR802N 5)
32 mΩ, 3.7 A, ULL

IRLMS2002 1) 4)
45 mΩ, 6.5 A, SLL

BSR202N 4)
33 mΩ, 3.8 A, SLL

SOT-23

IRLML6244 1) 4)
27 mΩ, 6.3 A, SLL

SOT-323

SOT-363

BSS816NW 5)
240 mΩ, 1.4 A, ULL

BSD214SN 4)
250 mΩ, 1.5 A, SLL

BSS214NW 4)
250 mΩ, 1.5 A, SLL

BSD840N 5)560 mΩ, 0.88 A, ULL, dual

IRLML6246 1) 4)
66 mΩ, 4.1 A, SLL

BSL806N 5)
82 mΩ, 2.3 A, ULL, dual

BSD235N 4)
600 mΩ, 0.95 A, SLL, dual

IRLML2502 1) 4)
80 mΩ, 4.2 A, SLL

20 V

BSS806N 5)
82 mΩ, 2.3 A, ULL

Applications

Voltage[V]

Solutions

Small-signal/small-power N-channel

BSS806NE 5)
82 mΩ, 2.3 A, ULL, ESD
BSS205N 4)
85 mΩ, 2.5 A, SLL

15-300 V MOSFETs

BSS214N 4)
250 mΩ, 1.5 A, SLL
IRFML8244 1) 3)
41 mΩ, 5.8 A, LL

30 V

IRLTS6342 1) 4)
22 mΩ, 8.3 A, SLL

IRLML6344 1) 4)
37 mΩ, 5.0 A, SLLIRFTS8342 1) 3)
29 mΩ, 8.2 A, LL

IRLML0030 1) 3)
40 mΩ, 5.3 A, LL

IRLMS1503 1) 3)
200 mΩ, 3.2A, LL

IRLML6346 1) 4)
80 mΩ, 3.4 A, SLL

BSD316SN 3)
280 mΩ, 1.4 A, LL

500-950 V MOSFETs

25 V

BSS306N 3)
93 mΩ, 2.3 A, LL
IRLML2030 1) 3)
154 mΩ, 2.7 A, LL
BSS316N 3)
280 mΩ, 1.4 A, LL

Gate-driver ICs

IRLML2803 3)
400 mΩ, 1.2 A, LL
IRLML0040 1) 3)
78 mΩ, 3.6 A, LL

40 V

BSS670S2L 3)
825 mΩ, 0.54 A, LL

IRFL024Z 1) 2)
57.5 mΩ, 5.1 A, NL
IRLL2705 1) 3)
65 mΩ, 3.8 A, LL

Digital isolators

55 V

IRFL4105 1) 2)
45 mΩ, 3.7 A, NL
IRLL024N 1) 3)
100 mΩ, 3.5 A, LL
IRLL014N 1) 3)
280 mΩ, 2.0 A, LL

BSS138W 3)
4 Ω, 0.28 A, LL

ISP12DP06NMA*
125 mΩ, 2.8 A, NL

IRLML2060 1) 3)
640 mΩ, 1.2 A, LL

SN7002W 3)
7.5 Ω, 0.23 A, LL

ISP25DP06LMA*
250 mΩ, 1.9 A, LL

2N7002 1) 3)
4 Ω, 0.3 A, LL

ISP25DP06NMA*
250 mΩ, 1.9 A, NL

BSS138I 1) 3)
4 Ω, 0.23 A, LL

N-channel
60 V

BSP295 3)
500 mΩ, 1.8 A, LL

BSS138N 3)
4 Ω, 0.23 A, LL

BSL606SN 3)
95 mΩ, 4.5 A, LL

BSS606N 3)
90 mΩ, 3.2 A, LL

2N7002DW 3)
4 Ω, 0.3 A, LL, dualIntelligent powerswitches and modules

IRLML0060 1) 3)
116 mΩ, 2.7 A, LL

ISP670P06NMA*
67 mΩ, 3.7 A, NL

IGBT discretes andsilicon power diodes

IRFL014N 1) 2)
160 mΩ, 1.9 A, NL

SN7002I 1) 3)
7.5 Ω, 0.2 A, LL

Microcontrollers

SN7002N 3)
7.5 Ω, 0.2 A, LL
BSS159N 6)
8 Ω, 0.13 A, depletion
ISS20EP06LMA*
2.0 Ω, 0.3 A, LL

BSP373N
240 mΩ, 1.8 A, NL

IRLML0100
235 mΩ, 1.6 A, LL

BSP372N 3)
270 mΩ, 1.8 A, LL

BSS119N 3)
10 Ω, 0.19 A, LL

100 V

BSP296N 3)
800 mΩ, 1.2 A, LL

BSS123I 1) 3)
10 Ω 0.19 A, LL

ISP16DP10LMA*
167 mΩ, 2.2 A, LL

BSS123N 3)
10 Ω 0.19 A, LL

USB-C controllers
and peripherals

ISS75EP06LMA*
7.5 Ω, 0.18 A, LL
2)

Power
management ICs

BSS169I 1) 6)
12 Ω, 0.09 A, depletion

150 V
200 V

IRFL4315 1) 2)
185 mΩ, 2.6 A, NL

IRF5802 1) 2)
1.2 Ω, 0.9 A, NL

BSP297 3)
3 Ω, 0.66 A, LL

IRF5801 1) 2)
2.2Ω, 0.6 A, NL

BSP149 6)
3.5 Ω, 0.14 A, LL, depletion
BSP88 3)
7.5 Ω, 0.35 A, SLL

240 V

WBG semiconductors

BSS169 6)
12 Ω, 0.09 A, depletion

BSS87 3)
7.5 Ω, 0.26 A, LL

BSS131 3)
20 Ω, 0.11 A, LL

BSP89 3)
7.5 Ω, 0.35 A, LL
BSP129 6)
20 Ω, 0.05 A, LL, depletion

250 V

BSS139 6)30 Ω, 0.10 A, LL, depletion
BSP324 3)
22 ClickΩ, 0.17 A,here
LL
to learn more:
BSP125 3)
60 www.infineon.com/smps
Ω, 0.12 A, LL

1) 6)
BSP135I
www.infineon.com/xxxxxxx
60 Ω, 0.02 A, LL, depletion

600 V

BSS225 3)
www.infineon.com/xxxxxxx
45 Ω, 0.09
A, LL

www.infineon.com/xxxxxxx

BSS127I 1) 3)
www.infineon.com/xxxxxxx
600 Ω, 0.021
A, LL

Support

400 V

Sensors

BSS139I 1) 6)
30 Ω, 0.10 A, LL, depletion

BSS127 3) www.infineon.com/xxxxxxx
600 Ω, 0.021 A, LL
BSS126I 1) 6)
700 Ω, 0.021 A, LL,
depletion

BSP135 6)
60 Ω, 0.02 A, LL, depletion

BSS126 6)700 Ω, 0.021 A, LL,
depletion

Click here to learn more:
www.infineon.com/powermosfet-12V-300V
www.infineon.com/optimos-strongirfet-packages
1) not qualified to Automotive AEC-Q101
2) RDS(on) specified at 10 V

www.infineon.com/optimos6
www.infineon.com/optimos7

3) RDS(on) specified at 4.5 V
4) RDS(on) specified at 2.5 V

www.infineon.com/strongirfet2
www.infineon.com/smallsignal

5) RDS(on) specified at 1.8 V
6) RDS(on) specified at 0 V

154Solutions

Product portfolio

Small-signal/small-power P-channel
TSOP-6

BSP317P
5 Ω, -0.43 A, LL
3)-250 V-150 V

SOT-89SC59

BSS192P
15 Ω, -0.19 A, LL

BSR92P
13 Ω, -0.14 A, LL

3)

SOT-23

SOT-323

SOT-363

Applications

SOT-223

3)

BSP92P 3)
15 Ω, -0.26 A, LL
ISP14EP15LM 1) 3)
1.4 Ω, -1.29 A, LL

15-300 V MOSFETs

Voltage[V]

BSR316P 3)
2.2 Ω, -0.36 A, LL
BSP322P 3)
1 Ω, -1.0 A, LL

ISP16DP10LM 1) 3)
190 mΩ, -3.9 A, LL

500-950 V MOSFETs-100 V

BSP316P 3)
2.3 Ω, -0.68 A, LL

ISP98DP10LM 1) 3)
1.05 Ω, -1.55 A, LL
ISP20EP10LM 1) 3)
2.2 Ω, -0.99 A, LL
ISP650P06NM 1) 2)
65 mΩ, -3.7 A, NL

BSR315P 3)
1.3 Ω, -0.62 A, LL

ISS17EP06LM 1) 3)
2.2 Ω, -0.3 A, LL

BSS84PW 3)
12 Ω, -0.15 A, LL

ISP13DP06NMS 1) 2)
125 mΩ, -2.8 A, NL

BSS83P 3)
3 Ω, -0.33 A, LL

BSP613P 2)
130 mΩ, -2.9 A, NL

ISS55EP06LM 1) 3)
7 Ω, -0.18 A, LL

ISP25DP06NM 1) 2)
250 mΩ, -1.9 A, NL

BSS84P 3)
12 Ω, -0.17 A, LL

Gate-driver ICs

ISP12DP06NM 1) 2)
125 mΩ, -2.8 A, NL

ISP26DP06NMS
260 mΩ, -1.9 A, NL

P-channel MOSFETs-60 V

Digital isolators

1) 2)

BSP170P 2)
300 mΩ, -1.9 A, NL
ISP25DP06LM 1) 3)
310 mΩ, -1.9 A, LL
ISP25DP06LMS 1) 3)
310 mΩ, -1.9 A, LL

IGBT discretes andsilicon power diodes

BSP171P 3)
450 mΩ, -1.9 A, LL
ISP75DP06LM 1) 3)
1 Ω, -1.1 A, LL
BSP315P 3)
1.4 Ω, -1.17 A, LL

IRLML9301 1) 3)
103 mΩ, -1.3 A, LL

BSL307SP
74 mΩ, -5.5 A, LL

BSS308PE 3)
130 mΩ, -2.1 A, LL, ESD

BSL308PE 3)
130 mΩ, -2.1 A, LL, dual,
ESD

IRLML5203 1) 3)
165 mΩ, -3.0 A, LL

3)Microcontrollers

BSS314PE 3)
230 mΩ, -1.5 A, LL, ESD-30 V

BSS315P 3)
270 mΩ, -1.5 A, LL
IRLML9303 1) 4)
270 mΩ, -2.3 A, LL
IRLML5103 1) 3)
1000 mΩ, -0.76A, LL-20 V

BSL207SP 4)
41 mΩ, -6.0 A, SLL

IRLML2244 1) 4)
95 mΩ, -4.3 A, SLL

BSS209PW 4)
900 mΩ, -0.58 A, SLL

BSV236SP 4)
285 mΩ, -1.5 A, SLL

IRLTS2242 1) 4)
55 mΩ, -6.9 A, SLL

IRLML6402 1) 4)
135 mΩ, -3.7 A, SLL

BSS223PW 4)
2.1 Ω, -0.39 A, SLL

BSD223P 4)
2.1 Ω, -0.39 A, SLL, dual

IRLMS6802
100 mΩ, -5.6 A, SLL

IRLML2246
236 mΩ, -2.6 A, SLL

BSL211SP
110 mΩ, -4.7 A, SLL

BSS215P 4)
280 mΩ, -1.5 A, SLL

1) 4)

1) 4)

4)

Power
management ICs

IRLML6401 4)
125 mΩ, -4.3 A, ULL-12 V

TSOP-6
BSL215C
N: 250 mΩ, 1.5 A, SLL
P: 280 mΩ, -1.5 A, SLL

4)

BSL308C 3)
N: 93 mΩ, 2.3 A, LL
P: 130 mΩ, -2.0 A, LL

Sensors

BSL316C 3)
N: 280 mΩ, 1.4 A, LL
P: 270 mΩ, -1.5 A, LL

Click here to learn more:
www.infineon.com/powermosfet-12V-300V
www.infineon.com/optimos-strongirfet-packages
1) not qualified to Automotive AEC-Q101
2) RDS(on) specified at 10 V

3) RDS(on) specified at 4.5 V
4) RDS(on) specified at 2.5 V

www.infineon.com/optimos6
www.infineon.com/optimos7
5) RDS(on) specified at 1.8 V
6) RDS(on) specified at 0 V

SupportComplementary-30/30

SOT-363
BSD235C
N: 600 mΩ, 0.95 A, SLL
P: 2.1 Ω, -0.53 A, SLL

4)-20/20WBG semiconductors

Small-signal/small-power complementary
Voltage[V]

USB-C controllers
and peripherals

IRFTS9342 1) 2)
40 mΩ, -5.8 A, NLIntelligent powerswitches and modules

IRF5803 1) 2)
112 mΩ, -3.4 A, NL-40 V

www.infineon.com/strongirfet2
www.infineon.com/smallsignal*Coming soon155Applications

Solutions

OptiMOS™ nomenclature

Nomenclature
03

S

L

X

E

Package type
BSB = DirectFET™
(M Can)
BSC = SuperSO8
BSF = DirectFET™
(S Can)
BSK = PQFN 2x2
BSO = SO-8
BSZ = PQFN 3.3x3.3
IPA = FullPAK
SPB/IPB = D2PAK
IPC = Chip product
SPD/IPD = DPAK
IPI = I2PAKSPP/IPP = TO-220
IPS = IPAK Short Leads
IPT = TO-LeadlessG

500-950 V MOSFETs

N

RoHS compliant

Gate-driver ICs

Features
F = Fast switching
R = Integrated gate
resistor
E = ESD protection
A = Qualified according toAutomotive AEC Q101

Digital isolators

3 = Technology generation
I = Monolithically-integrated
Schottky-like diodeFD = Fast diodeLF = Linear mode capability

RDS(on) [mΩ]Divide by 10 to get RDS(on)value e.g. 014 = 1.4 mΩ

IGBT discretes andsilicon power diodes

Package options
SO-8/SuperSO8/PQFN 3.3x3.3/PQFN 2x2
S = Single chip
D = Dual chip

However, if the sixth characteris a C, the fourth and the fifthcharacter indicate the RDS(on)e.g. 12C = 12 mΩ
For chip products chip areain mm2 multiplied by 10
N = N-channel
P = P-channel
C = Complementary

Level
N = Normal level
M = Logic level 5 V opt.
L = Logic level
K = Super logic level
J = Ultra logic level

(NL)
(LL)
(ELL)
(SLL)
(ULL)

to be used from VGS
10.0
4.5
4.5
2.5
1.8

Power
management ICs

Breakdown voltage [V]Multiply by 10 to getvoltage class e.g. 03 = 30 V
E = Extended, +5 V, e.g. E2 = 25 VIntelligent powerswitches and modules

DirectFET™
X = MX footprint
N = MN footprint
Z = MZ footprint
Q = SQ footprint
T = ST footprint
H = SH footprint
J = SJ footprint

Microcontrollers

014

USB-C controllers
and peripherals

BSC

15-300 V MOSFETs

OptiMOS™

OptiMOS™ 30 V

Consecutive number
without any correlation
to product specificationNX

I
WBG semiconductors

Package type

0901

I = Monolithically-integrated
Schottky-like diodeD = Dual
E = ESDS = Single

Sensors

BSC

SupportChannels
N = N-channel
P = P-channel

156

Solutions

Small signal andStrongIRFET™ nomenclature

Applications

Small signal
E

Additional features
E = ESD-protected MOSFET

2-3 digits product identifier
meaning dependent on
product generation

Only present in following case
W = to distinguish SOT-323 from SOT-23

Only present in following case
S = Single (only for packages which
are also used for multichip products)

Polarity
N = N-channel
P = P-channel
C = Complementary(N-ch + P-ch)

IGBT discretes andsilicon power diodes“X” indicates the package
D = SOT-363
P = SOT-223
R = SC59
S = SOT-89, SOT-23, SOT-323
L = TSOP-6

15-300 V MOSFETs

W

500-950 V MOSFETs

N

Gate-driver ICs

S

Digital isolators

( )

BSX

StrongIRFET™ (from May 2015 to 2019)
F

135

SA

204

Intelligent powerswitches and modules

IR

USB-C controllers
and peripherals
Powermanagement ICs
WBG semiconductors
Sensors

2 to 3 digit voltage
For example:
25 = 25 V
135 = 135 V

Package1 or 2 letters
B = TO-220
BA = Super220
C = Bare die or wafer
DL = DirectFET™ 1.5 Large Can
DM = DirectFET™ 1.5 Medium Can
Can DS = DirectFET™ 1.5 Small Can
Can FF = TO-220 FullPAK
H = PQFN 5x6
HB = Power Block 5x6
HM = PQFN 3.0x3.0 or 3.3x3.3
HS = PQFN 2x2
I = TO-220 FullPAK
K = SO-8
L = SOT-223
ML = SOT-23
P = TO-247
PS = Super247
R = DPAKS = D2PAKSL = TO-262
SA = D2 7-pin with pin 2 void
SN = D2 7-pin with pins void
SC = D2 7-pin with pin 4 void
T = TollFET
TS = TSOP-6
U = IPAK

SupportDrive voltage
F = 4.5 VGS capable for BV ≤ 30 V
L = 2.5 VGS capable for BV ≤ 30 V, 4.5 VGS capable for BV ≥ 40 V

Microcontrollers

3 sequential digits
3 digits issued sequentially157

Solutions

New nomenclature(2019 onward)

RDS(on) [ mΩ]Divide by 10 to get RDS(on) valuee.g. 012 = 1.2 mΩ

Gate-driver ICs

Features
D = Dual
H = Half-bridge
3=M arketing generation withbranding strategy
CG = Center gate
E = ESD protection
F = Fast switching
FD = Fast diodeSC = Dual-side coolingI=M onolithically-integrated
Schottky-like diodeLF = Linear mode
R = Integrated gate resistor
Last letter – requirement category:
A = Qualified according to AECQ 101
S = Standard
None = Industrial
Level to be used for VGS
N = Normal level
L = Logic level
M = Logic level 5 V opt.
K = Super logic level
J = Ultra logic level

(NL)
(LL)
(ELL)
(SLL)
(ULL)

15-300 V MOSFETs

M|F = P roduct brand – family(M = OptiMOS™, F = StrongIRFET™)

500-950 V MOSFETs

I

Digital isolators

L

IGBT discretes andsilicon power diodes

25

10.0 V
4.5 V
4.5 V
2.5 V
1.8 V

Breakdown voltage [V]Divide by 10e.g. E2 = 25 V
10 = 100 V
25 = 250 VIntelligent powerswitches and modules

Package type
SC = SuperSO8
SD = SOT-363
SL = TSOP-6
SK = PQFN 2x2
SA = SO8
SP = SOT-223
SQ = CE2
SR = SC59
SS = SOT-89, SOT-23, SOT-323
ST = sTOLL
SZ = PQFN 3.3x3.3
PA = TO-220 FullPAKPB = D²PAK
PC = Chip Product
PD = DPAK
IPF = D2PAK-7-pin
PI = I²PAKPP = TO-220
PS = IPAK Short Leads
PT = TO-Leadless
PW = TO-247
QA = PQFN 5x6
QB = PQFN 3x2
QC = PQFN 3x5
QD = PQFN 5x6 Source-Down
QE = PQFN 3.3x3.3 Source-Down
WS = DirectFET™ (S)WM = DirectFET™ (M)WL = DirectFET™ (L)QF = PQFN 8x6

N

Microcontrollers

Infineon

010

USB-C controllers
and peripherals

SC

Power
management ICs

I

Applications

New nomenclature for OptiMOS™ and StrongIRFET™ MOSFETs (2019 onward)

WBG semiconductors

However, if the sixth character
is D or E the fourth and the fifthcharacters indicate the RDS(on) e.g.
12D = 120 mΩ
12E = 1200 mΩ
For chip products chip area in
mm2 multiplied by 10

SupportSensors

Version
N = N-channel
P = P-channel
C = Complementary
G = GaN

158

Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators

MOSFET Cross Reference
www.infineon.com/cms/en/product/search/cross-reference
For more information regarding StrongIRFET™ and OptiMOS™ power MOSFET bare die products,
please contact the Infineon Service Center or your local sales counterpart.

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

MOSFET Community
community.infineon.com/t5/Power-MOSFET/bd-p/MOSFET

USB-C controllers
and peripherals

Die support
www.infineon.com/barediePowermanagement ICs

Evaluation boards and simulation models
www.infineon.com/powermosfet-simulationmodels

WBG semiconductors

Further information, data sheets and documents
www.infineon.com/pchannel
www.infineon.com/depletionwww.infineon.com/complementarywww.infineon.com/source-down
www.infineon.com/optimos-linearfet
www.infineon.com/powerblock
www.infineon.com/tolx

Sensors

Useful links and helpful information

SupportInfineon support for low voltage MOSFETs

Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules
Sensors

600 V C7 Gold (G7) SJ MOSFETs‒ 600 V CoolMOS™ S7 SJ MOSFETs‒ 600V CoolMOS™ S7-T SJ MOSFETs‒ 600 V CoolMOS™ CFD7 SJ MOSFETs‒ 650 V CoolMOS™ CFD7 SJ MOSFETs‒ CoolMOS™ CE SJ MOSFETs‒ CoolMOS™ SJ MOSFETs for automotive‒ 600 V CoolMOS™ S7A SJ MOSFETs‒ 600 V CoolMOS™ S7A-T SJ MOSFETs‒ CoolMOS™ SJ MOSFET package innovations‒ 500-950 V MOSFETs product portfolio‒ 500-950 V MOSFETs nomenclaturePowermanagement ICs‒ CoolMOS™ SJ MOSFETs‒ 950 V CoolMOS™ P7 SJ MOSFETs‒ 950 V CoolMOS™ PFD7 SJ MOSFETs‒ 800 V CoolMOS™ P7 SJ MOSFETs‒ 700 V CoolMOS™ P7 SJ MOSFETs‒ 600 V CoolMOS™ 8 SJ MOSFETs‒ 600 V CoolMOS™ P7 SJ MOSFETs‒ 600 V CoolMOS™ PFD7 SJ MOSFETs‒ 600 V and 650 V CoolMOS™ C7 and

WBG semiconductors

500-950 V MOSFETs

USB-C controllers
and peripherals

Microcontrollers

500-950 V MOSFETs

www.infineon.com/smps
www.infineon.com/xxxxxxx

www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

SupportClick here to learn more:Solutions

CoolMOS™ SJ MOSFETs

Applications

CoolMOS™ SJ MOSFETs

15-300 V MOSFETs

Trusted leader in high-voltage MOSFETs
Infineon’s CoolMOS™ products offer a significant reduction of conduction, switching and driving losses, and enablehigh power density as well as efficiency for superior power conversion systems.

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

CoolMOS™ SJ MOSFETS overview*

Powermanagement ICs
WBG semiconductors
SupportInfineon’s industrial- and consumer-qualified CoolMOS™ superjunction MOSFET offering is complemented by theautomotive-qualified series 600 V CPA, 650 V CFDA, 800 V C3A, and the latest 650 V CFD7A as well as 600 V S7A/S7TA.
Infineon’s excellent-performing automotive series address on-board chargers, DC-DC converters, active pre-charge anddischarge function, insulation monitor, HV eFuse, and HV eDisconnect with proven outstanding quality standards goingwell beyond the AEC-Q101, supporting customers to gain momentum in the rapidly growing xEV market.

Sensors

Also for industrial applications such as server, telecom, PC power, solar, ESS, UPS, EV-charging and others, Infineon’s
CoolMOS™ 7 superjunction MOSFETs with the C7, G7, CFD7, P7, and S7(T) product families offer what you need. The S7
product family specifically addresses slow switching applications such as solid state relay and solid state circuit breaker
offering the best-in-class RDS(on) within the industry. The new 600 V CoolMOS™ 8 supersedes the CoolMOS™ 7 MOSFET family
offering best price-performance. The series is equipped with an integrated fast body diode, making it suitable for awide range of applications like server and industrial SMPS, EV charging, and micro solar. Complementary to the silicon
CoolMOS™ portfolio, Infineon offers a broad wide-bandgap (WBG) portfolio of CoolGaN™ GIT HEMTs, CoolGaN™ IPS,
and CoolSiC™ MOSFETs to further optimize efficiency and system cost (see Wide bandgap semiconductors chapter).

USB-C controllers
and peripherals

Microcontrollers

High-voltage superjunction MOSFETs address consumer applications, such as home appliance drives, smartphone/tablet chargers, notebook adapters, LED lighting, PC power, as well as audio and TV power supplies. Customers are
increasingly replacing standard MOSFETs with superjunction MOSFETs to benefit from higher efficiency and lower
power consumption for end users. CoolMOS™ P7 offers high performance and a competitive price. The CoolMOS™
PFD7 series is a state-of-the-art solution for high density chargers/adapters, lighting applications as well as home
appliance drives (e.g., refrigerator compressors).

Click here to learn more:
www.infineon.com/coolmos
www.infineon.com/coolmos-latest-packages www.infineon.com/wbg
www.infineon.com/coolmos-automotive www.infineon.com/coolmos8* Subject to change and exceptions possible. For more details on product status check out the individual product pages online.

161

Applications

Solutions

950 V CoolMOS™
PFD7 SJ MOSFETs

950 V CoolMOS™ PFD7 SJ MOSFETs

15-300 V MOSFETs

Perfect fit for soft- and hard-switching topologies

500-950 V MOSFETs

The 950 V CoolMOS™ PFD7 is a revolutionary superjunction technology for high-voltage power MOSFETs, with an
integrated fast body diode to address lighting and industrial SMPS applications. The new series is tailor-made for usage
across several topologies, such as PFC, LLC, and flyback.

Key features

Key benefits– Integrated ultrafast body diode with BiC Qrr– Best-in-class FOM RDS(on) x Eoss; reduced QG, Ciss and Coss
– BiC RDS(on) in various packages like 450 mΩ in DPAK and 60 mΩ in TO-247– V(GS)th of 3 V and smallest V(GS)th variation of ±0.5 V– ESD protection up to class 2 (HBM)– Offering the highest quality and reliability– Price competitiveness over previous CoolMOS™ families– Hard commutation ruggedness that enables the usage of PFD7 in different

Gate-driver ICs

Features and benefits

circuit topologies– Improved efficiency and thermal behavior over internal and external
comparable products

Digital isolators– Enabling higher power density designs and BOM savings– Easy to drive and design-in– Improved production yield by reducing ESD-related failures andreduced field returns

IGBT discretes andsilicon power diodes– Cost-competitive designs with superjunction

Efficiency measurements for 310 mΩ devices at 90 VAC (Rg,ext = 10 Ω)△ Efficiency [%]+0.22 %

0.5
0.4

+0.65 %

0.3
+0.26 %

0.2
+0.36 %

0.1
0.0
-0.1

0

100

200

300

400

500

600

IPW90R340C3

IPW95R310PFD7

USB-C controllers
and peripherals

Power [W]950 V CoolMOS™ PFD7 outperforms previous CoolMOS™
families as well as the main competition concerning PFC
efficiency:‒ Improvement of 0.26 percent in light-load and 0.22
percent in full-load efficiency compared to the maincompetition‒ Improvement of 0.36 percent in light-load and 0.65
percent in full-load efficiency compared to 900 V
CoolMOS™ C3Intelligent powerswitches and modules

Up to 0.65 % improved
efficency in PFC

0.6

Microcontrollers

0.7

Competitor

Efficiency measurements for 310 mΩ in 880 W ZVS FB set up+0.1 %

-0.1

0

100

200

300

400

500

600

700
Sensors-0.2

Iout [A]

IPW95R310PFD7

Competitor

Click here to learn more:
www.infineon.com/coolmos
www.infineon.com/coolmos-latest-packages www.infineon.com/wbg
www.infineon.com/coolmos-automotive www.infineon.com/coolmos8

Support△ Efficiency [%]same level

0.0

WBG semiconductors

Slight light load improved
efficiency in 800 W LLC

0.1

Power
management ICs

950 V CoolMOS™ PFD7 closes the gap and matches theperformance of the main competition regarding LLC
efficiency:‒ Improvement of 0.1 percent in light-load efficiency
compared to the main competition

0.2

162

Solutions

950 V CoolMOS™ P7 SJ MOSFETs

Relative efficiency at 90 VAC (ref: IPA95R450P7)

Temperature at 90 VAC
65

0.2
Δ 5.2°C

15

20

25

30

35

40 Δ 0.2%

-0.4
-0.6

IGBT discretes andsilicon power diodes

40

10

35
-0.8

30
25

5

10

15

IPA95R450P72025Pout [W]
IPA90R500C3

30

35

40

-1.0
Pout [W]Competitor

IPA95R450P7

IPA90R500C3

Competitor

Compared to competition, the 950 V CoolMOS™ P7 delivers best-in-class efficiency and thermal performance. Plug-and-play
at 90 VAC in a 40 W adapter reference design, featuring the snubberless concept, demonstrates excellent efficiency
gains of up to 0.2 percent and lower MOSFET temperature of up to 5.2°C compared to similar competitor technology.
With over 20 years of experience in superjunction technology, Infineon introduces 950 V CoolMOS™ P7 with best-inclass DPAK on-resistance (RDS(on)). This SMD device comes with the RDS(on) of 450 mΩ - more than 60 percent lower RDS(on)compared to the nearest competitor. Such low RDS(on) value enables higher density designs while decreasing BOM andassembly cost.
1200 mΩ

1000

600

450 mΩ

400
200

Sensors0Competitor CoolMOS™ C3 CoolMOS™ P7

Click here to learn more:
www.infineon.com/coolmos
www.infineon.com/coolmos-latest-packages www.infineon.com/wbg
www.infineon.com/coolmos-automotive www.infineon.com/coolmos8

SupportRDS(on) [mΩ]

-65%
800

Best-in-class DPAK RDS(on)Customer benefits:‒ Possible change from leaded to SMD packages‒ High power density‒ Lower BOM cost
‒ Lower production costPowermanagement ICs

1250 mΩ

1200

WBG semiconductors

1400

Intelligent powerswitches and modules

45

5
-0.2

Microcontrollers

50

Digital isolators

0.0

USB-C controllers
and peripherals

55

Efficiency [%]Temperature [°C]60500-950 V MOSFETs

Designed to meet the growing consumer needs in the high-voltage MOSFETs arena, the 950 V CoolMOS™ P7 technology
focuses on the low-power SMPS market. The P7 family addresses applications ranging from lighting, smart meter, mobile
phone charger, notebook adapter, to AUX power supply and industrial SMPS. Offering 50 V more blocking voltage than its
predecessor 900 V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency,
thermal behavior, and ease of use. As all other P7 family members, the 950 V CoolMOS™ P7 series comes with an
integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESDrelated yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with a best-in-class thresholdvoltage (VGS(th)) of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to drive and design-in.

Gate-driver ICs

Perfect fit for PFC and flyback topologies

15-300 V MOSFETs

Applications

950 V CoolMOS™ P7 SJ MOSFETs

163

Solutions

800 V CoolMOS™ P7 SJ MOSFETs

Applications

800 V CoolMOS™ P7 SJ MOSFETs

800 V CoolMOS™ exceptional EMI performance

0.6

60

0.5

50

0.4

40
IGBT discretes andsilicon power diodes

30

0.3

0.5%

20

0.2

0.3%

10

0.1

0
0

10

20

30

40

50

60

70

80

90

30

Frequency [MHz]Pout [W]
CoolMOS™ P7

CoolMOS™ C3Competitor 1

CoolMOS™ C3Competitor 2

CoolMOS™ P7

300
Competitor 1Intelligent powerswitches and modules

0Competitor 2

Microcontrollers

EMI is a system level topic, and the optimization needs to be done on the system level only. Nevertheless, a pureplug-and-play measurement on Infineon's 45 W adapter reveals that 800 V CoolMOS™ P7 shows similar EMI
performance to Infineon’s previous technologies as well as to competitors’ technologies.

850 mΩ
630 mΩ
450 mΩ-56%
280 mΩ

Competitor 2Competitor 1

CoolMOS™ P7

CoolMOS™ P7

Powermanagement ICs

CoolMOS™ P7 sets a new benchmark
in best-in-class DPAK RDS(on)Overview of lowest DPAK RDS(on) for 800 V superjunction MOSFET

360 mΩ

USB-C controllers
and peripherals

Compared to competition, the 800 V CoolMOS™ P7 technology allows to integrate much lower RDS(on) values into small
packages, such as a DPAK. This finally enables high power density designs at highly competitive price levels.

Customer benefits:‒ High power density‒ Lower BOM cost
‒ Lower production cost

CoolMOS™ P7

Sensors

The complete P7 platform has been developed with an integrated Zener diode that is used as an electrostatic discharge (ESD)
protection mechanism, which increases the overall device ruggedness up to human body model (HBM) class 2 level.

WBG semiconductors

Plug and play in an 80 W LED driver from market
Relative efficiency [%]Digital isolators

The technology offers fully optimized key parameters to deliver best-in-class efficiency as well as thermal performance.
As demonstrated on an 80 W LED driver, bought on the market, the >45 percent reduction in switching losses (Eoss)and output capacitance (Coss) as well as the significant improvement in input capacitance (Ciss) and gate charge (QG),
compared to competitor technologies, lead to 0.5 percent higher efficiency at light load which helps to reduce standby
power in the end application. At full load, the observed improvement is up to 0.3 percent higher efficiency and 6°C
lower device temperature.

Gate-driver ICs

With the 800 V CoolMOS™ P7 series, Infineon sets a benchmark in 800 V superjunction technologies and combines
best-in-class performance with the remarkable ease of use. This product family is a perfect fit for flyback-based
consumer and industrial SMPS applications. In addition, it is also suitable for PFC stages within consumer, as well as
solar applications, fully covering the market needs in terms of its price/performance ratio.

500-950 V MOSFETs

15-300 V MOSFETs

A benchmark in efficiency and thermal performance

Click here to learn more:
Supportwww.infineon.com/coolmos
www.infineon.com/coolmos-latest-packages www.infineon.com/wbg
www.infineon.com/coolmos-automotive www.infineon.com/coolmos8
164

Solutions

700 V CoolMOS™ P7 SJ MOSFETs

The 700 V CoolMOS™ P7 family has been developed to serve today’s and, especially, tomorrow’s trends in flyback
topologies. The products address the low-power SMPS market, mainly focusing on mobile phone chargers andnotebook adapters, but are also suitable for power supplies, used within lighting applications, home entertainment(TV, game consoles, or audio), and auxiliary power supplies. 700 V CoolMOS™ P7 achieves outstanding efficiency gains
of up to 4 percent and a decrease in device temperature of up to 16 K compared to the competition. In contrast with theprevious 650 V CoolMOS™ C6 technology, 700 V CoolMOS™ P7 offers 2.4 percent gain in efficiency and 12 K lower device
temperature, measured at a flyback-based charger application, operated at 140 kHz switching speed.
Relative efficiency
at 230 VAC; Tamb=25°C
18

0.0

16

6

3.5

4

-4.0

2

Digital isolators

8

5

IGBT discretes andsilicon power diodes

-3.0

10

0

-4.5
0.5

1.0

1.5

2.0

2.5

Iout [A]CoolMOS™ P7

CoolMOS™ C6

CoolMOS™ P7

CoolMOS™ C6Competitor 1

Competitor 2Competitor 1

Competitor 2

4.5

VGSth typ. [V]

4.0
3.5
3.0
2.5
2.0
1.5
CoolMOS™ P7

Comp. 1

Comp. 2Comp. 3Comp. 4Comp. 5Comp. 6

Keeping the ease of use in mind, Infineon has developed
the technology with a low threshold voltage (VGS(th)) of
3 V and a very narrow tolerance of ±0.5 V. This makes the
CoolMOS™ P7 easy to design-in and enables the usageof lower gate source voltage, which facilitates its driving
and leads to lower idle losses. To increase the ESD
ruggedness up to HBM class 2 level, 700 V CoolMOS™ P7
has an integrated Zener diode. This helps to support
increased assembly yield, leads to reduction of
production related failures and, finally, manufacturing
cost savings on customer side.

Powermanagement ICs

Gate threshold voltage and tolerance
5.0

Key benefits– Highly performant technology– Cost-competitive technology– Further efficiency gain at higher switching speed– Supporting less magnetic size with lower BOM costs– High ESD ruggedness up to HBM class 2 level– Easy to drive and design-in– Enabler for smaller form factors and high power density designs– Excellent choice in selecting the best-fitting product- Low switching losses (Eoss)- Highly efficient- Excellent thermal behavior

Sensors– Allowing high-speed switching– Integrated protection Zener diode– Optimized VGS(th) of 3 V with very narrow tolerance of ±0.5 V– Finely graduated portfolio

WBG semiconductors

Features and benefits
Key features

Intelligent powerswitches and modules

-2.5

12

Microcontrollers

-2.0

14

USB-C controllers
and peripherals

-1.5

16
13

△ 16 K-1.0△ 4%△Efficiency [%]-0.5△Temp [K]△ 1.5%

0.5

Gate-driver ICs

Relative temperature
at 230 VAC; Tamb=25°C, 30 min burn-in

500-950 V MOSFETs

Infineon’s solution for flyback topologies

15-300 V MOSFETs

Applications

700 V CoolMOS™ P7 SJ MOSFETs

Click here to learn more:
Supportwww.infineon.com/coolmos
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Solutions

600 V CoolMOS™ 8 SJ MOSFETs

Applications

600 V CoolMOS™ 8 SJ MOSFETs

The portfolio offers has innovative SMD Q-DPAK, TOLL, and Thin-TOLL 8x8 package offerings to simplify and reduce
assembly costs.
CoolMOS™ C7

CoolMOS™ CFD7

CoolMOS™ P7

CoolMOS™ S7Intelligent powerswitches and modules

CoolMOS™ 8

Efficiency

Ringing / Ease of use
design-in effort

Gate-driver ICs
IGBT discretes andsilicon power diodes

The 600 V CoolMOS™ 8 SJ MOSFET comes with reduced gate charge (Qg) of 18 percent over CFD7 and 33 percent overP7 at 10 V, 50 percent lower COSS than CFD7 and P7 at 400 V, reduction in turn-off losses (Eoss) is further improved by 12
percent over CFD7 and P7, reverse recovery charge (Qrr) is 3 percent lower compared to the CFD7, as well as the lowest
reverse recovery time (trr) in the market. The Rth thermal performance also improved with 14-42 percent comparing
previous generation. Due to these features the devices offer the highest efficiency and best-in-class reliability in softswitching topologies such as LLC and ZVS phase-shift full-bridge. Furthermore, it provides an outstanding level of
performance in PFC, TTF, and other hard-switching topologies. In addition, the 600 V CoolMOS™ 8 SJ MOSFETs enablehigher power density thanks to its optimized RDS(on) which allows us to bring our best-in-class (BiC) products down to asingle digit of 7 mΩ in a Si-based super-junction (SJ) technology.

Digital isolators

Infineon’s newest CoolMOS™ 8 at 600 V is leading the way in high voltage super-junction MOSFET technology
worldwide, setting the standard for both technology and price performance on a global scale. The series is equippedwith an integrated fast body diode, making it suitable for a wide range of applications. It enhances Infineon’s WBG
offering and the successor of the 600 V CoolMOS™ 7 MOSFET family including P7, PFD7, C7, CFD7, G7, and S7.

500-950 V MOSFETs

15-300 V MOSFETs

The high voltage super-junction MOSFET family combines
the best out of the 600 V CoolMOS™ 7 families

Cosmic radiation
based on FIT rate

USB-C controllers
and peripherals

Microcontrollers

Commutation ruggedness

Lowest RDS(on)Powermanagement ICs

Power density

Portfolio granularity

Key benefits– World class RDS(on)*A– Integrated fast body diode– Excellent commutation ruggedness– Advanced interconnect technology– Gradual portfolio including from 7 mΩ– Top-side cooling packages– 0.17% efficiency gain over P7, and 0.05% over C7– Ease of use and fast design-in– Low ringing tendency– 14-42% lower Rth– Simplified portfolio– System level innovation

Sensors

Key features

WBG semiconductors

Features and benefits

Click here to learn more:
Supportwww.infineon.com/coolmos
www.infineon.com/coolmos-latest-packages www.infineon.com/wbg
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166

Solutions

600 V CoolMOS™ P7 SJ MOSFETs

Applications

600 V CoolMOS™ P7 SJ MOSFETs

CoolMOS™ P7

CoolMOS™ P6

CoolMOS™ C7IGBT discretes andsilicon power diodes

competitive price/performance ratio of all 600 V CoolMOS™ offerings.

CoolMOS™ CE

Intelligent powerswitches and modules

Efficiency

Portfolio

Microcontrollers

Low ringing

Commutation
ruggedness

USB-C controllers
and peripherals

Price competitiveness

ESD

Key features

Key benefits– Suitable for hard and soft switching (PFC and LLC) due to an outstanding– Ease of use and fast design-in through low ringing tendency and usage across– Optimized balance between efficiency and ease of use– Significant reduction of switching and conduction losses leading to low– Improved efficiency and simplified thermal management due to low switching– Excellent ESD robustness >2 kV (HBM) for all products– Better RDS(on)/package products compared to competition– Large portfolio with granular RDS(on) selection qualified for a variety of

PFC and PWM stages

and conduction losses

WBG semiconductors

MOSFET temperaturePowermanagement ICs

Features and benefits

commutation ruggedness

Gate-driver ICs

The 600 V CoolMOS™ P7 is Infineon’s most well-balanced CoolMOS™ technology in terms of combining ease of use andexcellent efficiency performance. Compared to its predecessors, it offers higher efficiency and improved power density
due to the significantly reduced gate charge (QG) and switching losses (EOSS) levels, as well as optimized
on-state resistance (RDS(on)). The carefully selected integrated gate resistors enable very low ringing tendency and,thanks to its outstanding robustness of body diode against hard commutation, it is suitable for hard as well as
soft-switching topologies, such as LLC. In addition, an excellent ESD capability helps to improve the quality in
manufacturing. The 600 V CoolMOS™ P7 family offers a wide range of on-resistance (RDS(on))/package combinations,
including THD, as well as SMD devices, at an RDS(on) granularity from 24 to 600 mΩ and comes along with the most

Digital isolators

The 600 V CoolMOS™ P7 is a general purpose series, targeting a broad variety of applications, ranging from low-power
SMPS up to the highest power levels. In the low-power arena, it is the successor of the 600 V CoolMOS™ CE, and forhigh-power SPMS applications, it is the replacement for the 600 V CoolMOS™ P6, which makes it the perfect choice forapplications such as chargers, adapters, lighting, TV and PC power supplies, solar, small light electric vehicles, server
and telecom power supplies, and electric vehicle (EV) charging.

500-950 V MOSFETs

15-300 V MOSFETs

Perfect combination of high efficiency and ease of use– Higher manufacturing quality due to >2 kV ESD protection– Increased power density solutions enabled by using products with smaller footprint– Suitable for a wide variety of applications and power ranges

Sensors

industrial and consumer applications

Click here to learn more:
Supportwww.infineon.com/coolmos
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Solutions

600 V CoolMOS™ PFD7IGBT discretes andsilicon power diodes

Low-side MOSFET temperature
100 W motor drive at high line 230 VAC= 0.35%= 1.17%- 0,5

IPAN60R125PFD7S
IPA60R120P7

P7

-1

70

= 18°C
60

Intelligent powerswitches and modules

PFD7

0

Case temperature [°C]

80

CE

PFD7
"#$%!

- 1,5
0,5

1

1,5

2

2,5

3

IPD60R2K0PFD7S

3,5

Microcontrollers

50
IPD50R2K0CE

Output current [A]600 V CoolMOS™ PFD7 provides up to 2 percent higher
efficiency at 100 W, which results in an 18°C thermal
improvement. Its excellent commutation ruggedness
makes it the perfect fit for low-power drives.

USB-C controllers
and peripherals

600 V CoolMOS™ PFD7 increases efficiency in lightand full-load conditions. This results in a power density
increase of 1.8 W/in³ for ultrahigh power chargers andadapters.

Features and benefits
Key features

Key benefits– Very low FOM RDS(on) x Eoss
– Integrated robust fast body diode– Ultralow Qrr and industry’s fastest recovery time (Trr)– Minimized switching losses– Power density improvement compared to latest CoolMOS™ charger technology– Increased efficiency (especially at light-load operation) and improved thermal– Up to 2 kV ESD protection (HBM class 2)– Wide range of RDS(on) values and broad package portfolio– Excellent commutation ruggedness– BOM cost reduction and easy manufacturing– Robustness and reliability– Easy to select right parts for design fine-tuning

Sensors

behavior compared to CoolMOS™ CE technology for home appliance motor drives

Powermanagement ICs

0,5

WBG semiconductors

65 W delta efficiency at 90 VAC input voltage
with IPAN60R125PFD7S as reference

Efficiency increase [%]Digital isolators

A broad range of RDS(on) values in combination with a variety of packages helps in selecting the right part to optimize
designs. Furthermore, an integrated ESD protection of up to 2 kV eliminates ESD-related yield loss. Infineon’s industryleading SMD package offering contributes to bill-of-material and PCB space savings and simplifies manufacturing. This
unique set of product features and their resulting benefits, position the CoolMOS™ PFD7 superjunction MOSFET family
exceptionally well for ultrahigh density applications like chargers and adapters, USB power delivery but also for home
appliance drives (e.g., refrigerator compressors) and specific lighting SMPS applications.

500-950 V MOSFETs

The 600 V CoolMOS™ PFD7 MOSFET series set the benchmark in 600 V superjunction (SJ) technologies, shaped byInfineon’s experience of more than 20 years in pioneering in superjunction technology innovation. The series combines
best-in-class performance with state-of-the-art ease of use and features an integrated fast body diode ensuring arobust device and in turn reduced BOM for the customer. This product family offers up to 1.17 percent efficiency
increase compared to the CoolMOS™ P7 technologies, which leads to a power density increase of 1.8 W/in3.
CoolMOS™ PFD7 pushes the SJ MOSFET technology to new limits leading to outstanding improvement of lower
conduction and charge/discharge losses as well as a reduced turn-off and gate-driving losses.

Gate-driver ICs

The next level for ultrahigh power density designs andenergy-efficient home appliance drives

15-300 V MOSFETs

Applications

600 V CoolMOS™ PFD7 SJ MOSFETs

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168

Solutions

600/650 V CoolMOS™
C7/G7 SJ MOSFETs

15-300 V MOSFETs

Applications

600 V and 650 V CoolMOS™ C7 and
600 V C7 Gold (G7) SJ MOSFETs
Infineon’s superjunction MOSFET series for highest efficiency

500-950 V MOSFETs

Reduction of EOSS
7
6
5
–50%

4

Gate-driver ICs

Stored energy EOSS [µJ]

3
2
1
0
300

400

Digital isolators

200
Drain source voltage VDS [V]IPP60R180C7

IPP60R199CPGaN HEMTThe outstanding figures of merit (FOM) and the best-in-class on-state resistance (RDS(on)) offerings make the CoolMOS™ C7and C7 Gold series key enablers for highest efficiency and power density. While the 650 V CoolMOS™ C7 and
600 V C7 Gold (G7) superjunction MOSFETs are solely designed for hard-switching applications such as PFC, the 600 V
version is also well suited for high-end LLC stages due to its rugged body diode that withstands slew rates up to 20 V/ns. The
product portfolio contains TO-247 4-pin, ThinPAK 8x8, TO-Leadless and top-side cooled Double DPAK (D-DPAK) packages
which come with additional Kelvin source contacts enabling further efficiency advantages over the classical 3-pin approach.

Key features

Key benefits– Reduced switching loss parameters such as QG and Coss,– Increased efficiency in hard-switching topologies such as PFC and TTF– Reduced size and cost of magnetic components by increased switchingenabling higher switching frequency– 50% Eoss reduction compared to older CoolMOS™ CP– Suitable for hard-switching topologies (650 V and 600 V)– Suitable for high-end resonant (600 V only) topologies

frequency (e.g., 65 -130 kHz)MOSFET losses [W]
IPW60R045CP vs. IPZ60R060C7, highline 2.5 kW
12.4

0.6

0.2
6.6

6.0

0.1

4.7

0.3

3.0

0.2

2.1

0.1
0.8
1.0

4.1

1.9

2.8

2.1

CoolMOS™ C7

CoolMOS™ CP

0.1

Average

0.4%

0.0
0

200

400

600

800

1.000

1.200

Pout [W]
IPW60R040C7

IPW60R045CP

65 kHzGate charge

2.1
2.9

CoolMOS™ C7

130 kHz
Turn-off

Turn-onConduction
Sensors

IPZ60R040C7

CoolMOS™ CP

CoolMOS™ C7

0.1
1.5

WBG semiconductors

7.1

0.4

CoolMOS™ CP

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Support∆ Efficiency [%]

0.7

0.5

USB-C controllers
and peripherals– Increased power density by smaller packages for the same RDS(on)PFC CCM 1200 W efficiency difference for 90 VAC (PFC CCM, 1.150 W at 65 kHz)
0.8

0.7%

Microcontrollers

Features and benefits

IGBT discretes andsilicon power diodes

100

Intelligent powerswitches and modules

0

Power
management ICs

The 600 V and 650 V CoolMOS™ C7 and and 600 V C7Gold (G7) superjunction MOSFET series are designed toachieve record level efficiency performance – they offer
substantial efficiency benefits over the whole load range
in hard-switching applications compared to previous
series and competition. This is achieved by minimizing
switching losses via ultralow levels of switching losses(EOSS) (approximately 50 percent reduction comparedto the CoolMOS™ CP), reduced gate charge (QG)
and a careful balance of other relevant product key
parameters. The low Eoss and QG also enable operation at
higher switching frequency and related size reduction of
the circuit magnetics.

169

Solutions

600 V CoolMOS™ S7 SJ MOSFETs

Applications

600 V CoolMOS™ S7 SJ MOSFETs
CoolMOS™ P7, C7, G7, CFD7

RDS(on) x price

CoolMOS™ S7i.e. Brigde rectification in SMPS
Low frequency PFC for white goods

0i.e. Boost MOSFET in PFC

20

500-950 V MOSFETs

The 600 V CoolMOS™ S7 superjunction MOSFET
is the perfect fit for applications where MOSFETs
are switched at low frequency, such as active
bridge rectification, inverter stages, in-rushrelays, PLCs, power solid state relays, and solidstate circuit breakers. The new MOSFET design
with the best conduction performance allows the
CoolMOS™ S7 to offer cost-optimized distinctively
low on-resistance (RDS(on)) values, ideally suited
for applications looking to minimize conduction
losses at the best price.

15-300 V MOSFETs

The best price/performance SJ MOSFET for low frequency switching applications

i.e. Higher density designs

100

250

Gate-driver ICs

Switching frequency [kHz]The CoolMOS™ S7 leads the way for power density,
uniquely fitting a 22 mΩ RDS(on) chip into an innovative

Digital isolatorssmall TO-Leadless (TOLL) SMD package.

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Use cases
Typically, CoolMOS™ S7 is used in active rectification bridges, where diodes are replaced or paralleled with MOSFETs,
obtaining an increase in efficiency without the need for extensive system redesign. In this application, the TO-leadless(TOLL) package in low RDS(on) allows the most efficient and compact modular design based on daughter cards.
The CoolMOS™ S7 delivers also tremendous value to solid state relay (SSR) and solid state circuit breaker (SSCB) designs,
by bringing the superjunction MOSFET advantages to a system level cost comparable to other silicon alternatives. In
addition, any socket or topology switching at low frequency can greatly benefit from the leading low RDS(on) x price.

Key features

Key benefits– Best-in-class RDS(on) in SMD packages– Optimized for conduction performance, reaching the lowest RDS(on) values– High pulse current capability– Improved thermal resistance– Minimizes conduction losses– An easy step into Titanium level SMPS
– Modular, more compact and easier designs– Eliminates or reduces heat sink in solid state relays and circuit breakers– Lower TCO cost or BOM cost

3 kW GaN-based totem pole PFC efficiency calculation
with and without synchronous rectification when
Vin = 230 VAC, Vout = 400 V, fsw = 65 kHz
99.3

with sync rect

99.0

98.5

+0.5%
98.0

Power
management ICs+0.3%

Efficiency [%]no sync rect

98.5

10

20

30
22 mΩ

40

50
60
Load [%]
40 mΩ

70

80

90

100

No synchronous rectification

CoolMOS™ S7 brings more efficiency to power
supplies when used in an active rectification bridge.

10

20

30

40

50
60
Load [%]

70

80

90

100

35 mΩ GaN based half-bridge totem pole PFC
35 mΩ GaN based half-bridge totem pole PFC with 22 mΩ CoolMOS™ S7 in synchronous rectification
35 mΩ GaN based half-bridge totem pole PFC with 40 mΩ CoolMOS™ S7 in synchronous rectification

CoolMOS™ S7 is the perfect complement for CoolSiC™ MOSFETs
and CoolGaN™ GIT HEMTs in totem pole PFC topologies.

Sensors

98.0

97.0

WBG semiconductors

97.5

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Support

Efficiency [%]99.0

USB-C controllers
and peripherals

Efficiency in 2400 W PFC at Vin = 230 VAC
Difference between using or not using theactive-bridge rectification

Microcontrollers

Features and benefits

170

Solutions

600 V CoolMOS™ S7-T SJ MOSFETs

The CoolMOS™ S7-T comes in TOLL and Q-DPAK top-side cooled (TSC) package, with a compatible RDS(on) matching
those of the S7 portfolio offerings. The best-in-class silicon base 10 mΩ comes in the Q-DPAK TSC and BSC. The topside cooling concept enables thermal decoupling between the PCB material and semiconductor overcome thermal
limit, making it a compelling solution in addressing higher power level. Combined with the low RDS(on), the SMD package

IGBT discretes andsilicon power diodes

is able to drive the efficiency and power density to the next level.

Gate-driver ICs

As an addition to our 600 V CoolMOS™ S7 product family, the 600 V CoolMOS™ S7-T is introduced as an optimized lowfrequency and high-current switching applications with an integrated temperature measuring functionality, which is
an ideal fit for solid-state relay, circuit breaker designs, and line rectification in SMPS. The 600 V CoolMOS™ S7-T has amonolithically embedded temperature sensor, which increases junction temperature sensing accuracy and robustness
while enabling easy implementation. It optimizes the thermal utilization of power transistor design, and simplifies heatsink design, as well as and reduction of external sensing elements. Essentially this lower overall system complexity andreduces system cost.

Digital isolators

The best fit for solid-state applications

500-950 V MOSFETs

15-300 V MOSFETs

Applications

600 V CoolMOS™ S7-T SJ MOSFETs
with integrated temperature sensor

Intelligent powerswitches and modules

The solid state isolators (iSSI) gate driver is a dedicated pin-to-pin gate driving solution to complement the S7-T
MOSFET, offering customers ease of use as a complete system solution. More information about the iSSI gate drive canbe found in Infineon Solid State Isolators (iSSI).
A back-to-back configuration, using CoolMOS™ S7 on the high side and the S7-T at the low sideP

Microcontrollers

VCC
CoolMOS™ S7iSSl solid-stateisolator

USB-C controllers
and peripherals

CTL_inFB_outT

GND

CoolMOS™ S7 SSR Chipset solution with iSSI gate driverPowermanagement ICs

CoolMOS™ S7-T

OUT

Key benefits– Enabled lowest RDS(ON) in the smallest footprint– High pulse current capability– Seamless diagnostic at the lowest system cost
– Temperature sense feature for protection and optimized thermal device utilization– Minimized conduction losses– Increased system performance– Reduction of external sensing elements– Lower BOM or/and TCO over a prolonged lifetime– More compact and simplified design

Sensors

Key features

WBG semiconductors

Features and benefits

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Solutions

600 V CoolMOS™ CFD7 SJ MOSFETs

Applications

600 V CoolMOS™ CFD7 SJ MOSFETs

15-300 V MOSFETs

Infineon's solution for resonant switching high-power applications

Qrr comparison of 170 mΩ CFD vs. 190 mΩ range competition*

Efficiency comparison of CFD7 vs. CFD2 and competition in 2 kW ZVS
1

1200

0.8
1000

World‘s best Qrr got even better!

600
-32 %

400

Intelligent powerswitches and modules

Qrr [nC]

800

0.6

Δ Efficiency [%]

-69 %

0.4
0.2
0

Δ 1.45%

Digital isolators

In addition, the 600 V CoolMOS™ CFD7 enables higher power density solutions by offering the best-in-class on-state
resistance (RDS(on)) package combinations in through-hole devices, as well as in surface mount devices. In ThinPAK 8x8 andTO-220 with CoolMOS™ CFD7, a RDS(on) of around 30 percent below the next best competitor offering can be achieved.
All this together makes CoolMOS™ CFD7 the perfect fit for server and telecom applications, and it is also suitable for
EV-charging stations.

IGBT discretes andsilicon power diodes

As a result of significantly reduced gate charge (QG), improved turn-off behavior, a reverse recovery charge (Qrr) of up
to 69 percent lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market, it
combines the highest efficiency and best-in-class reliability in soft-switching applications, without sacrificing the easy
implementation in the design-in process.

Gate-driver ICs

500-950 V MOSFETs

The 600 V CoolMOS™ CFD7 is one of Infineon’s high-voltage superjunction MOSFET series with an integrated fast body
diode. It is the ideal choice for resonant topologies, such as LLC and ZVS PSFB, and targets the high SMPS market.

Δ 0.17%-0.2

0Microcontrollers

-0.4
200

-0.6
-0.8
Comp. C

Comp. A

Comp. D

Comp. B

CFD2

CFD7

0

10

20

30

40

Load current [A]
IPW60R070CFD7

IPW65R080CFD

Competitor A

Competitor B

Competitor C

Competitor D

USB-C controllers
and peripherals*Comparison based on datasheet values– Ultrafast body diode– Best-in-class reverse recovery charge (Qrr)– Improved reverse diode dv/dt and dif/dt ruggedness– Lowest figure of merit (RDS(on) x QG x Eoss)– Best-in-class RDS(on)/package combinations– Best-in-class hard commutation ruggedness– Highest reliability for resonant topologies– Highest efficiency with outstanding ease of use/performance trade-off– Enabling increased power density solutions

WBG semiconductors

Key benefits

Sensors

Key features

Powermanagement ICs

Features and benefits

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Solutions

650 V CoolMOS™ CFD7 SJ MOSFETs

The 650 V device family is the voltage-range extension of Infineon’s renowned CoolMOS™ CFD7 family, the successor to
the well-established CoolMOS™ CFD2. It comes along with an additional 50 V breakdown voltage, integrated fast body
diode, improved switching performance (compared to previous generations), and excellent thermal behavior. Thanks
to these features, the 650 V CoolMOS™ CFD7 allows for the highest efficiency and power density levels in soft-switching
applications such as LLC and ZVS phase-shift-full-bridge.

600 V CoolMOS™ CFD7

650 V CoolMOS™ CFD7

IGBT discretes andsilicon power diodes

CoolMOS™ CFD2

Digital isolators

The best-in-class RDS(on) in TO-247, TO-220, and D2PAK enables customers to increase the power density level of theirdesigns primarily addressing telecom, server, solar, and (off-board) EV-charging applications.

Intelligent powerswitches and modules

Efficiency

Price competitivenessMicrocontrollers

Breakdown voltage

Portfolio granularity

USB-C controllers
and peripherals

Body diode performance

Ease of use– 50 V extra margin for increased bus voltage– Excellent hard commutation ruggedness– Outstanding light load efficiency– High full load efficiency

WBG semiconductors– 650 V blocking voltage– Ultrafast body diode– Reduced switching losses– Low RDS(on) dependency over temperature

Sensors

Key benefitsPowermanagement ICs

Features and benefits
Key features

500-950 V MOSFETs

The need for improved efficiency and higher power density in industrial SMPS applications is driven by the megatrendsof the 21st century such as big data, digitalization, and e-mobility. Furthermore, over the last few years, due to thehigher nominal input voltages in the US, a trend towards 450 V bus voltage, and the need for worldwide applicable
designs, the demand for 650 V breakdown voltage has increased significantly - also for resonant topologies.

Gate-driver ICs

Tailored to win in resonant topologies

15-300 V MOSFETs

Applications

650 V CoolMOS™ CFD7 SJ MOSFETs

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Solutions

CoolMOS™ CE SJ MOSFETs

Applications

CoolMOS™ CE SJ MOSFETs

15-300 V MOSFETs

High-voltage superjunction MOSFETs for consumer applications

500-950 V MOSFETs

Infineon‘s CoolMOS™ CE is a product family that addresses consumer and lighting applications. It offers benefits inefficiency and thermal behavior versus standard MOSFETs and is optimized for ease of use and cost-competitiveness,while delivering the right-fit performance and excellent Infineon quality.

Application example: 10 W and 15 W smartphone charger

CoolMOS™ CE case temperature:
The maximum MOSFET case temperature is required tobe below 90°C. CoolMOS™ CE meets this requirement andoffers enough margin required for design-in flexibility.

10 W design: IPS65R1K5CE
EN 55022 B radiated HF-field
30 MHz – 1 GHz position

20
10

20
10

0

0
-10
300 400 500

800 1G

EN 55022 B RE 10 m OP

30

-10
30M

200

30M

Frequency [Hz]Horizontal direction

Low line

Vertical direction

Gate-driver ICs

CoolMOS™ CE efficiency performance:
CoolMOS™ CE meets the 80 percent standard efficiency
requirement and offers enough margin required fordesign-in flexibility.

40
Level [dBµV/m]

Level [dBµV/m]

30

50 60 80 100M

High line

15 W design: IPS65R1K0CE
EN 55022 B radiated HF-field
30 MHz – 1 GHz position

EN 55022 B RE 10 m OP

40

15 W charger
IPS70R1K4P7S

Digital isolators

Low line

10 W charger
IPS65R1K5CE

IGBT discretes andsilicon power diodes

High line

7%50 60 80 100M

200

300 400 500

Intelligent powerswitches and modules

15 W charger
IPS70R1K4P7S

14%

The performance of CoolMOS™ CE
in the 10 W and 15 W design
demonstrates that the series meets
common EMI requirements forcharger applications and thus, is alsooffering design-in flexibility.

800 1G

Frequency [Hz]Horizontal direction

Vertical direction

CoolMOS™ CE customer benefits
Broad portfolio covering five voltage classes in both through-hole and SMD packages

Quality

Field failure rates are as low as 0.1 DPM

Design-in support

Large field application engineering team to provide professional and flexible support for your design

Sensors

Product portfolio

Microcontrollers

10 W charger
IPS65R1K5CE

4.5%

4.5%

USB-C controllers
and peripherals

14°C

100
95
90
85
80
75
70
65
60
55
50

Power
management ICs

13°C

19°C

7°C

WBG semiconductors

100
90
80
70
60
50
40
30
20
10
0

CoolMOS™ CE meets the standard
efficiency requirements in charger application

Average efficiency [%]Temperature [°C]

CoolMOS™ CE meets typical MOSFET
case temperature requirements in charger applications

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Solutions

CoolMOS™ automotive

The highest system performance in a size and weight constrained environment, outstanding and proven product quality andreliability, as well as 100 percent reliable delivery, are key requirements for manufacturers in the automotive market. With
the high-voltage automotive MOSFET series 600 V CoolMOS™ CPA and 650 V CoolMOS™ CFDA, 800 V CoolMOS™ C3A, and 650 V
CoolMOS™ CFD7A, Infineon is perfectly prepared to take the challenges in the strongly growing automotive market.

– Outstanding performance in terms ofefficiency, thermal behavior and ease-of-use– High blocking voltage

650 V CoolMOS™ CFD7A– Improved 650 V CoolMOS™ CFDA
– Higher application voltage possible (at the same
proven reliability level)– D2PAK 7-pin with increased creepage distanceand Kelvin source– Considerable improvement in key parameters(higher efficiency)

converter– HID lamp
– Active DC link discharge– Pre-charge– Flyback low-power auxiliaries– On-board charger– HV-LV DC-DC converter– Battery disconnect unit
– Traction inverter auxiliaries– DC-link pre-charge– DC-link active discharge– Isolation monitoring– On-board charger

Digital isolators

800 V CoolMOS™ C3A– Resonant-switching topologies– DC-DC stage of OBC– LLC or full-bridge phase shift (ZVS) in DC-DC

IGBT discretes andsilicon power diodes

Easy implementation of layout and design– Integrated fast body diode– Limited voltage overshoot during hard commutation – self-limiting dI/dt and dV/dt– Low Qrr at repetitive commutation on body
diode and low Qoss

Quality
Quality level well beyond theformal requirements of the AEC
Q101 standard throughSpecial screening measures infront end, back end
Mission-profile based qualification procedures– Hard-switching topologies (with SiC diode)– PFC boost stages– DC-DC stage of OBC– HV-LV DC-DC converter– LLC or full-bridge phase shift (ZVS)– Auxiliary power supplies

Intelligent powerswitches and modules

650 V CoolMOS™ CFDA

Applications– Hard-switching topologies (with SiC diode)– PFC boost stages in on-board charger

Gate-driver ICs

Key features
Best choice for demanding hard-switching
applications– Lowest RDS(on) per package– Lowest gate charge value QG

Microcontrollers

Product series
600 V CoolMOS™ CPA

500-950 V MOSFETs

600 V CoolMOS™ CPA, 650 V CoolMOS™ CFDA, 800 V CoolMOS™ C3A,
650 V CoolMOS™ CFD7A – on the fast lane in automotive applications

15-300 V MOSFETs

Applications

CoolMOS™ SJ MOSFETs for automotive

CoolMOS™ SJ MOSFET automotive – benchmark in quality and reliability
Robustness validation – example for thermal cycling test

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Focus on top-notch quality and reliability without any compromise– that is the principle Infineon applies during development and+254%
qualification of all CoolMOS™ superjunction technologies. For
2.540 cycles
1.270 cycles
our automotive grade derivatives, the great quality levels of the
1.000 cycles
industrial-based technologies are further boosted by special
screening measures in front- and back-end, as well as by extended
AEC Q101
Customer mission Infineon automotive qualification procedures. The Infineon robustness validation
profilerobustness validation
approach with extended stress-test procedures, doubling the realapplication requirements, is one of our key measures to ensure a quality level well beyond the formal requirements of
the AEC Q101 standard. Aside from extended stress times on standard qualification tests, it comprises test procedures,
specially developed by Infineon to ensure highest quality of e.g., the power metallization of our devices. Usage ofrobust package technologies, 100 percent gate oxide screening, and top-notch production monitoring, including
yield screening measures, part average testing (PAT), statistical bin alarm (SBA), and pattern recognition procedures,complete our package to guarantee highest automotive quality. This holistic approach results in an unrivalled quality
position of Infineon’s CoolMOS™ SJ MOSFETs for automotive.

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175

Solutions
Applications
15-300 V MOSFETs
Digital isolators

Gate-driver ICs

500-950 V MOSFETs

OBC Vienna rectifier for three-phase PFC in OBC

USB-C controllers
and peripherals

Microcontrollers

Classic PFC stage for OBCIntelligent powerswitches and modules

Driven by the carbon dioxide (CO2) reduction initiatives, the market of plug-in hybrid PHEV and pure EV is strongly
growing. Higher ranges of the electric vehicles are realized by increasing the battery capacity and the energy efficiencyof the used electric components. The used battery voltage classes tend to become standardized at approximately
450 V with a trend towards the higher voltages, as this supports faster charging times and enables lighter cabling
within the vehicle. Discrete high-voltage components are widely used for on-board charger (OBC) and DC-DC converter(LDC) applications, as price pressure increasingly displaces module-based solutions. The trend towards fast charging
impacts on the power range demanded from OBC topologies. Presently, as well as in the past, a vast majority of OBC
topologies have been found in the range up to 7.2 kW, whereas the future tends to stir the trend towards 11 kW or evenup to 22 kW. This development, paired with a demand for high efficiency and power density at low system cost, is astrong driver for the usage of three-phase solutions.

IGBT discretes andsilicon power diodes

CoolMOS™ SJ MOSFET automotive – ready to support future application trends

Sensors

WBG semiconductors

Powermanagement ICs

While for the lower power OBC solutions classic PFC approaches are the well-established approaches in the market,
the Vienna rectifier is the optimal solution for the higher power levels. As a true three-phase topology, it delivers fullpower if attached to a three-phase input but is flexible enough to run on a single-phase if required. The three-level
topology minimizes the filter effort compared to other solutions. By using the doubled frequency on the magnetic
components, it also helps to significantly reduce the size of the passives. As a three-level topology, the Vienna rectifier,followed by two paralleled DC-DC stages, furthermore leads to a relaxed voltage stress level on the power MOSFETs.
This way, it enables to handle upcoming higher battery voltage levels. The RDS(on), required to yield a desired efficiency
level in a Vienna Rectifier, is a function of applied switching frequency and demanded power level. With our 600 V
CoolMOS™ CPA and 650 V CoolMOS™ CFDA portfolio, covering an RDS(on) range from 45 to 660 mΩ, we are well-preparedto support your next-generation three-phase Vienna rectifier design. With CoolMOS™ you are ready to seize your sharein the emerging high-power on-board charger markets.
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Solutions

CoolMOS™ automotive

Classic boost PFC efficiency
with 35 mΩ CoolMOS™ CFD7A and 650 V SiC diode @ Vin = 230 Vrms
99.00

CoolMOS™ S7A is the ideal device for the ALR active line
rectification in a classic boost PFC topology, which offers apower loss reduction up to 30 percent and an overall PLC
efficiency improvement of 0.5 percent.

98.50

97.00

Efficiency gain 0.5% with
CoolMOS™ S7A in ALR!

96.50

HV power distribution unit

96.00

Energy distribution

10

30

50

90

with CoolMOS™ S7A in ALR
Microcontrollers

without ALR

70

500-950 V MOSFETs
Intelligent powerswitches and modules

97.50

IGBT discretes andsilicon power diodes

CoolMOS™ S7A is the semiconductor solution for HV
eDisconnect and HV eFuse. It answers e-mobility needs
with respect to reliability (maintenance-free), flexible
and cost-optimized system integration, scalability, andminimized failure propagation.

98.00

Gate-driver ICs

The automotive-grade 600 V CoolMOS™ S7A superjunction MOSFET addresses xEV applications where MOSFETs are
switched at low frequency, such as HV eFuse, HV eDisconnect, and on-board charger in the slow-switching leg of the PFC
stage. The more stringent requirements for increased power density, safety, and reliability in these applications are met
by combining the superior robustness and performance of the S7A MOSFET with the innovative package concept
offered by the Q-DPAK TSC. The new MOSFET design offers a cost-optimized, distinctively low on-resistance RDS(on) of 10 mΩ,enabling increased power density and minimized conduction losses. The top-side cooled Q-DPAK package offers
increased efficiency and controllability thanks to its intrinsic Kelvin source, high power dissipation capability, andinnovative cooling concept.

Digital isolators

Best-in-class RDS(on) x A SJ MOSFET for slow-switching automotive applications

15-300 V MOSFETs

Applications

600 V CoolMOS™ S7A

eFuse

USB-C controllers
and peripherals

eDisconnect– Best-in-class RDS(on): 10 mΩ
– Smallest RDS(on) in SMD packages– Optimized for conduction performance– Industry‘s leading heat-sinking capability– High pulse current capability– Body diode robustness at AC line commutation– Kelvin-source concept– Minimized conduction losses– Increased energy efficiency– More compact and easier designs– Increased power density– Lower TCO cost or BOM cost
– Flexible system integration– Variable cooling strategy

WBG semiconductors

Key benefits

Sensors

Key features

Powermanagement ICs

Features and benefits

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177

Solutions

600 V CoolMOS™ S7A-T SJ MOSFETs

15-300 V MOSFETs

Applications

600 V CoolMOS™ S7A-T SJ MOSFETs
with integrated temperature sensor
Pioneering solid-state applications in automotive

Gate-driver ICs

500-950 V MOSFETs

In addition to our 600 V CoolMOS™ S7A product family, the 600 V CoolMOS™ S7A-T is introduced as an optimized
solution for the automotive sector’s low-frequency and high-current switching applications. Featuring an embedded
temperature sensor, the S7A-T enhances junction temperature sensing accuracy and robustness, ensuring easy andseamless implementation. This monolithically embedded temperature sensor optimizes power transistor designand simplifies heat sink design, lowering system complexity and cost. The temperature sense feature also provides
protection and optimized thermal device utilization, resulting in a more compact design than electromechanicaldevices.

Digital isolators

The 600 V CoolMOS™ S7A-T is well-suited for potential applications such as circuit breakers (HV eDisconnect switch, DC
and AC low-frequency switch, HV eFuse, onboard charger) and line rectification in high-power/performance automotive
applications.

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Available in the Q-DPAK in both TSC and BSC configurations, the CoolMOS™ S7A-T offers a compatible RDS(ON)matching those of the 600 V CoolMOS™ S7A portfolio offerings. Its silicon base’s best-in-class 10 mΩ in the Q-DPAK, in
both TSC and BSC configurations, combined with the top-side cooling concept, enables thermal decoupling between
the PCB material and semiconductor. This feature overcomes thermal limits and addresses higher power levels, driving
efficiency and power density to the next level.
A back to back configuration, using CoolMOS™ S7 on the high side and the S7-T at the low sideP
VCC

Microcontrollers

CoolMOS™ S7iSSl solid-stateisolator

CTL_inUSB-C controllers
and peripherals

FB_outT

CoolMOS™ S7 SSR Chipset solution with iSSI gate driverPowermanagement ICs

CoolMOS™ S7 SSR Chipset
solution with iSSI gate driver

CoolMOS™ S7-T

OUT

Features and benefits
Key features

Key benefits– Optimized price performance in low-frequency switching applications– High pulse current capability– Seamless diagnostic at the lowest system cost
– Temperature sense feature for protection and optimized thermal device utilization– Reduction of external sensing elements, hence a more compact design compared to electromechanical devices

Sensors– Increased system performance– Minimized conduction losses– More reliability and longer system lifetime– Shock and vibration resistance with no contact arcing or bouncing

WBG semiconductors

GND

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CoolMOS™ SJ MOSFET high-power package innovations

15-300 V MOSFETs

Space-saving and high performance packages
TO-263-7 (D2PAK-7-pin)
The TO-263-7-pin package is a SMD package addressing automotive-specific requirements

parasitic inductance associated with long leaded packages such as the TO-247 package. In today’s

Innovative top-side cooled SMD
solution for high-power applications

SMD-based designs, the output power is restricted by the thermal limit of the PCB material because
the heat must be dissipated through the board. Thanks to the top-side cooling concept of D-DPAK
and Q-DPAK, the thermal decoupling of board and semiconductor is possible, enabling higher power density or improved system lifetime.

Bottom-side cooled Q-DPAK
The bottom-side cooled surface mount device (SMD) packages address high-power SMPS
applications such as solar, server, telecom as well as automotive applications. SMD-based
SMPS designs support fast switching and help to reduce the parasitic inductance associatedwith long leaded package. Furthermore, SMD packages simplify assembly and reduce cost,
while minimizing space requirements for the overall packages. The bottom-side cooled variantof Q-DPAK allow designers to benefit from these advantages, while implementing a more
traditional cooling scheme for high power switches compared to the novel top-side cooled

Innovative bottom-side cooled SMD

variants. Tried and tested PCB materials and assembly can be used, while improving the power

solution for high-power applications

path routing thanks to multiple source pins, as well as benefiting from advanced features suchas multiple gate pins for safety applications.

TO-247 4-pin with asymmetric leads
The TO-247 4-pin package with asymmetric leads is an optimized version of the standard
TO-247 4-pin and enables highest efficiency and controllability in the high-power SMPS
market. The fourth pin acts as a Kelvin source. The main current of the switch is placedoutside of the gate loop and the feedback is eliminated. This leads to less switching losses,
especially at high currents. Secondly, the EMI will be reduced due to cleaner waveforms.
In addition, the asymmetric leads further improve the ease of use in the design-in process.
For highest efficiency and controllability

Compared to the standard TO-247 4-pin the distance between the critical pins has beenin high-power SMPS markets

increased to enable simplified wave soldering and reduced board yield loss.

Sensors

ThinPAK 8x8

Digital isolatorsand on-board charger. SMD-based SMPS designs support fast switching and help to reduce the

IGBT discretes andsilicon power diodes

telecom, solid state circuit breaker as well as automotive applications like HV eDisconnect, HV eFuse

Intelligent powerswitches and modules

S7, CM8, CoolSiC™ MOSFET 750 V) address high-power SMPS applications such as PC power, solar,

Microcontrollers

These top-side cooled surface mount device (SMD) packages (available today in 600 V CFD7, G7,

USB-C controllers
and peripherals

Top-side cooled Double & Quadruple DPAK (D-DPAK + Q-DPAK)

Power
management ICs

the PCB and therefore helps to improve the manufacturability.

WBG semiconductors

switching losses. Furthermore, the 7-pin design increases the creepage distance at

Gate-driver ICs

500-950 V MOSFETs

including high efficiency and controllability. The Kelvin source pin leads to reduced

An SMD package for high efficiency
and controllability in automotive
applications

Applications

Solutions

CoolMOS™ high-power packages

With a very small footprint of only 64 mm² (vs. 150 mm² for the D²PAK) and a very low profile
with only 1 mm height (vs. 4.4 mm for the D²PAK) the ThinPAK 8x8 leadless SMD package forhigh-voltage MOSFETs is a first choice to decrease system size in power-density driven designs.
Low parasitic inductance and a separate 4-pin Kelvin source connection offer best efficiency andSupportEnabling significant space savings

ease of use. The package is RoHS compliant with halogen-free mold compound.

TO-LeadlessCombined with the CoolMOS™ C7 Gold (G7) technology, the TO-Leadless (TOLL) package
is Infineon’s flagship SMD package for high power/high current SMD solutions. Comparedto D2PAK 7-pin, TO-Leadless shows a 30 percent reduction in footprint, yet offers improved
thermal performance. This, and the 50 percent height reduction result in a significant advantage whenever highest power density is demanded. Equipped with 4-pin Kelvin source
Optimized for high-power

connection and low parasitic inductances the package offers best efficiency and ease of

applications

use. The package is MSL1 compliant and reflow solderable.

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CoolMOS™ SJ MOSFET low-power package innovations

15-300 V MOSFETs

Addressing today’s consumer needs
SOT-223500-950 V MOSFETs

The SOT-223 package without middle pin is a cost-effective alternative to DPAK, addressing the need for cost reductions in price-sensitive applications. It offers a smaller
footprint, while still being pin-to-pin compatible with DPAK, thus, allowing a drop-in

replacement for DPAK

tors or space savings in designs with low power dissipation.

Digital isolatorsthermal performance to DPAK and enables customers to achieve improved form fac-

Gate-driver ICs

replacement for DPAK and second sourcing. Moreover, SOT-223 achieves comparable
Cost-effective drop-in

ThinPAK 5x6
ThinPAK 5x6 reduces the PCB area by 52 percent and height by 54 percent when compared to the DPAK package which is widely used in chargers and adapters. ThinPAK

IGBT discretes andsilicon power diodes

5x6 is the right device to replace DPAK and meet the market demands of slimmer andspot temperature by increasing the space between the MOSFET and the charger andadapters and chargers

adapter case.

Intelligent powerswitches and modules

smaller designs. Also, ThinPAK 5x6 enables a reduced charger and adapter case hot
Solution for slim and small

TO-220 FullPAK Narrow Lead

Microcontrollers

Infineon’s TO-220 FullPAK Narrow Lead addresses customer needs with regards toheight reduction requirements in adapter and charger applications. By offering an
optimized standoff width and height and improved creepage distance, the package
can be fully inserted into the PCB without any production concerns and, therefore, isespecially suitable for slim and semi-slim adapter solutions.

USB-C controllers
and peripherals

Solution for height reduction

Powermanagement ICs

in adapters and chargers

TO-220 FullPAK Wide Creepage
This package solution has an increased creepage distance between the pins to 4.25 mmcompared to 2.54 mm of a TO-220 FullPAK package. It targets open frame power sup-WBG semiconductors

plies such as TV sets and PC power, where dust can enter the case through air vents.
Dust particles can reduce the effective creepage between pins over time, which maylead to high voltage arcing. The package meets the requirements of open frame power
supplies without any additional measures. Thus, it reduces system cost by offering an

open frame power supplies

alternative to frequently used approaches to increase creepage distance.
Sensors

Improved creepage distance forApplications

Solutions

CoolMOS™ low-power packages

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Solutions

CoolMOS™ product portfolio

950 V CoolMOS™ PFD7RDS(on)[mΩ]

TO-220
FullPAKTO252(DPAK)TO247
IPW95R060PFD7

130

IPA95R130PFD7

IPW95R130PFD7

IPB95R130PFD7

310

IPA95R310PFD7

IPW95R310PFD7

IPB95R310PFD7

450

IPA95R450PFD7

IPB95R450PFD7

500-950 V MOSFETs

IPD95R450PFD7

15-300 V MOSFETs

60

TO263
(D²PAK)

TO-220
FullPAK

TO-220450

IPA95R450P7

750

IPA95R750P7

1200

IPA95R1K2P7

TO-251Long lead

SOT-223

TO-252(DPAK)
IPD95R450P7

IPU95R750P7
IPN95R1K2P7

IPD95R750P7
IPD95R1K2P7

2000

IPD95R2K0P7
IPN95R3K7P7

IGBT discretes andsilicon power diodes

3700

Digital isolators

RDS(on)[mΩ]

Gate-driver ICs

950 V CoolMOS™ P7

TO-247

TO-252(DPAK)

TO-251(IPAK)

280

IPA80R280P7360

IPA80R360P7

IPD80R360P7

450

IPA80R450P7

IPD80R450P7600

IPA80R600P7

IPD80R600P7750

IPA80R750P7

IPD80R750P7

900

IPA80R900P7

IPD80R900P7

IPA80R1K4P7

IPD80R1K4P7

IPU80R1K4P7
IPU80R2K0P7

1200
1400

SOT-223

ThinPAK 5x6

IPD80R280P7
IPAN80R360P7
IPU80R600P7

IPLK80R600P7
IPLK80R750P7

IPU80R900P7

IPLK80R900P7

IPD80R1K2P7
IPP80R1K4P7

TO-220
FullPAKnarrow lead

IPD80R2K0P7
IPD80R2K4P7

3300

IPD80R3K3P7

4500

IPD80R4K5P7

IPLK80R1K2P7
IPN80R1K4P7

IPLK80R1K4P7
IPLK80R2K0P7

IPN80R2K4P7
IPU80R4K5P7

IPN80R4K5P7

Sensors

WBG semiconductors

Powermanagement ICs

2000
2400

Microcontrollers

TO-220
FullPAK

USB-C controllers
and peripherals

TO -220

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SupportRDS(on)[mΩ]Intelligent powerswitches and modules

800 V CoolMOS™ P7

181

Applications

Solutions

CoolMOS™ product portfolio

800 V CoolMOS™ C3
TO-263(D2PAK)

TO-220TO-220
FullPAK85

TO-252(DPAK)

TO-24715-300 V MOSFETs

RDS(on)[mΩ]

SPW55N80C3

290
450
650

SPP08N80C3

500-950 V MOSFETs

900
1300
2700

TO-251(IPAK Short Lead)360

TO-220
FullPAK
IPA70R360P7S

TO-252(DPAK)
IPD70R360P7S

TO-220
FullPAKnarrow lead
IPAN70R360P7S

IPN70R360P7S
IPN70R450P7S

600

IPA70R600P7S

IPD70R600P7S

IPAN70R600P7S

IPN70R600P7S

750

IPLK70R600P7
IPLK70R750P7

900

IPD70R900P7S

IPLK70R900P7
IPLK70R1K2P7

IPS70R1K4P7S

IPN70R1K4P7S

IPLK70R1K4P7

IPN70R2K0P7S

IPLK70R2K0P7

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

2000

IPD70R1K4P7S

IGBT discretes andsilicon power diodes

1200
1400

ThinPAK 5x6

Digital isolators

450

SOT-223

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SupportRDS(on)[mΩ]

Gate-driver ICs

700 V CoolMOS™ P7

182

Applications

Solutions

CoolMOS™ product portfolio

650 V CoolMOS™ C7
TO-263(D2PAK)

TO-220
FullPAK

IPW65R019C7

IPZ65R019C7

45

IPP65R045C7

IPB65R045C7

IPA65R045C7

IPW65R045C7

IPZ65R045C765

IPP65R065C7

IPB65R065C7

IPA65R065C7

IPW65R065C7

IPZ65R065C7

IPP65R095C7

IPB65R095C7

IPA65R095C7

IPW65R095C7

IPZ65R095C7

IPP65R125C7

IPB65R125C7

IPA65R125C7

IPW65R125C7

IPP65R190C7

IPB65R190C7

IPA65R190C7

IPW65R190C7

19

TO-247

TO-252(DPAK)

TO-247 4-pin

70

IPL65R070C7

99
125

IPL65R099C7

130
190

IPL65R130C7
IPD65R190C7

195
225

500-950 V MOSFETs

95

ThinPAK 8x8
15-300 V MOSFETs

TO-220

IPL65R195C7
IPP65R225C7

IPD65R225C7

230

Gate-driver ICs

RDS(on)[mΩ]

IPL65R230C7

TO-262(I2PAK)

TO-220TO-263(D2PAK)

TO-220
FullPAK41

TO-252(DPAK)

TO-247IPW65R041CFD

80

IPW65R080CFD

110

IPP65R110CFD

IPB65R110CFD

IPA65R110CFD

IPW65R110CFD

150

IPP65R150CFD

IPB65R150CFD

IPA65R150CFD

IPW65R150CFD

IPP65R190CFD

IPB65R190CFD

IPA65R190CFD

IPW65R190CFD

310

IPP65R310CFD

IPB65R310CFD

IPA65R310CFD

420

IPP65R420CFD

165
190

ThinPAK 8x8

IGBT discretes andsilicon power diodes

RDS(on)[mΩ]

Digital isolators

650 V CoolMOS™ CFD2

IPL65R165CFDIntelligent powerswitches and modules

210
IPD65R420CFD
IPD65R660CFD

950

IPD65R950CFD

Microcontrollers

660

650 V CoolMOS™ CFD7
TO-263(D2PAK)

TO-247

TO-247 4-pin

18

IPW65R018CFD7IPZA65R018CFD7

29

IPW65R029CFD7IPZA65R029CFD7

TO-Leadless(TOLL)

ThinPAK 8x8

17

IPDQ65R029CFD7IPT65R040CFD7

IPP65R041CFD7
IPP65R060CFD7

IPB65R041CFD7

IPW65R041CFD7
IPW65R060CFD7

IPT65R060CFD765
IPT65R080CFD7
IPP65R090CFD7

IPB65R090CFD7

IPDQ65R080CFD7

IPW65R090CFD7
IPL65R095CFD7
IPT65R099CFD7IPP65R110CFD7

IPB65R110CFD7

IPW65R110CFD7

IPB65R125CFD7IPW65R125CFD7

115

IPDQ65R099CFD7WBG semiconductors

95
99

IPL65R115CFD7

125

IPT65R125CFD7

130

IPDQ65R125CFD7IPL65R130CFD7

IPP65R155CFD7IPB65R155CFD7IPW65R155CFD7

IPT65R155CFD7

160

IPL65R160CFD7
IPP65R190CFD7

200

IPT65R190CFD7

Sensors

190

IPDQ65R060CFD7
IPL65R065CFD7

80

155

IPQC65R040CFD7 IPDQ65R040CFD7

Powermanagement ICs

41
60

110

Q-DPAK TSC

IPQC65R017CFD7 IPDQ65R017CFD740

90

Q-DPAK BSC

USB-C controllers
and peripherals

TO-220

IPL65R200CFD7

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SupportRDS(on)[mΩ]

183

Applications

Solutions

CoolMOS™ product portfolio

600 V CoolMOS™ 8
D-DPAK

TOLL

Thin-TOLL 8x8

DPAK

TO 247-3

TO 247-4

TO 2207

IPDQ60R007CM8

16

IPDQ60R016CM8

IPT60R016CM8

IPW60R016CM8

24

IPDQ60R024CM8*

IPT60R024CM8*

IPW60R024CM8* IPZA60R024CM8*

37

IPDQ60R037CM8 IPDD60R037CM8 IPT60R037CM8

IPW60R037CM8

55

IPDQ60R055CM8*

IPT60R055CM8*

IPW60R055CM8* IPZA60R055CM8*

70

IPDQ60R070CM8*

IPZA60R016CM8 IPP60R016CM8
IPZA60R037CM8 IPP60R037CM8

IPT60R070CM8*

IPW60R070CM8* IPZA60R070CM8*

99

IPT60R099CM8*

IPW60R099CM8* IPZA60R099CM8*120

IPT60R120CM8*

IPW60R120CM8*160

IPT60R160CM8*

180

IPDD60R180CM8 IPT60R180CM8

IPTA60R180CM8 IPD60R180CM8

IPP60R180CM8

IPAN60R180CM8

IPD60R600CM8

Gate-driver ICs

600

TO 220
FullPAKnarrow lead

15-300 V MOSFETs

Q-DPAK TSC

500-950 V MOSFETs

RDS(on)[mΩ]

TO-220
FullPAK Narrow Leads

TO-252(DPAK)

125

IPAN60R125PFD7S

210

IPAN60R210PFD7S

IPD60R210PFD7S

280

IPAN60R280PFD7S

IPD60R280PFD7S

360

IPAN60R360PFD7S

SOT-223

ThinPAK 5x6

IPN60R360PFD7S

IPLK60R360PFD7IPD60R600PFD7S

IPN60R600PFD7S

IPLK60R600PFD7

1000

IPD60R1K0PFD7S

IPN60R1K0PFD7S

IPLK60R1K0PFD7

1500

IPD60R1K5PFD7S

IPN60R1K5PFD7S

IPLK60R1K5PFD7

2000

IPD60R2K0PFD7S

IPN60R2K0PFD7S

Intelligent powerswitches and modules

IPD60R360PFD7S

600

IGBT discretes andsilicon power diodes

RDS(on)[mΩ]

Digital isolators

600 V CoolMOS™ PFD7600 V CoolMOS™ P7 industrial grade

24

IPW60R024P7

37

IPW60R037P7

45

IPW60R045P7
IPP60R060P7

IPA60R060P7

IPB60R060P7
IPL60R065P7

80/85

IPP60R080P7

IPA60R080P7

IPW60R080P7

99

IPP60R099P7

IPA60R099P7

IPW60R099P7

IPL60R085P7
IPL60R105P7

IPP60R120P7

IPA60R120P7

IPW60R120P7

IPB60R120P7
IPL60R125P7

160

IPP60R160P7

IPA60R160P7180

IPP60R180P7

IPA60R180P7

IPW60R180P7

IPD60R180P7

185

IPB60R180P7
IPL60R185P7

IPP60R280P7

IPA60R280P7

IPD60R280P7

285

IPB60R280P7
IPL60R285P7

IPP60R360P7

IPD60R360P7
IPA60R600P7

IPB60R360P7

IPD60R600P7

Sensors

600

Powermanagement ICs

125

360

IPB60R080P7
IPB60R099P7

105

280

TO-263(D2PAK)

IPB60R045P7

IPW60R060P7

65

120

ThinPAK 8x8

WBG semiconductors

60

TO-252(DPAK)

Microcontrollers

TO-247

USB-C controllers
and peripherals

TO-220
FullPAKTO -220

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SupportRDS(on)[mΩ]

184

Applications

Solutions

CoolMOS™ product portfolio

600 V CoolMOS™ P7 standard gradeTO-220
FullPAK Narrow lead

180

IPA60R180P7S

280

IPA60R280P7S

IPAN60R180P7S

TO-252(DPAK)

SOT-223

IPD60R180P7S

15-300 V MOSFETs

TO-220 FullPAK

IPD60R280P7S

360

IPA60R360P7S

IPD60R360P7S

600

IPA60R600P7S

IPD60R600P7S

IPN60R360P7S

500-950 V MOSFETs

RDS(on)[mΩ]

600 V CoolMOS™ CFD7
TO-220TO-263(D2PAK)

TO-220
FullPAKTO-247

TO-252 (DPAK)

ThinPAK 8x8

D-DPAK

TO-Leadless(TOLL)Q-DPAK

IPW60R018CFD7

18

IPDQ60R020CFD7

20
IPW60R024CFD7

24

IPW60R031CFD7

37

IPW60R037CSFD

IPT60R035CFD7

IPDQ60R035CFD740/45

IPB60R040CFD7

IPW60R040CFD7

IPDD60R045CFD7IPT60R045CFD7

IPDQ60R045CFD755

IPB60R055CFD7IPW60R055CFD7

IPDD60R055CFD7IPT60R055CFD7

IPDQ60R055CFD7

IPDQ60R075CFD7IPL60R060CFD760
IPB60R070CFD7

IPW60R070CFD7

IPP60R090CFD7IPL60R075CFD7

IPDD60R075CFD7IPT60R075CFD7IPW60R090CFD7IPL60R095CFD7

IPDD60R090CFD7

IPT60R090CFD7IPB60R105CFD7

105/115
125/140

IPP60R125CFD7

145/160

IPP60R145CFD7170

IPP60R170CFD7

IPA60R125CFD7IPW60R105CFD7IPL60R115CFD7

IPDD60R105CFD7IPT60R105CFD7

IPDD60R125CFD7IPT60R125CFD7IPW60R125CFD7IPD60R145CFD7

IPA60R170CFD7IPL60R160CFD7IPD60R170CFD7IGBT discretes andsilicon power diodes

IPP60R070CFD7

75
90/95

Digital isolators

IPDQ60R025CFD7

25
31/35

70

Gate-driver ICs

IPDQ60R015CFD7

15

IPDD60R145CFD7Intelligent powerswitches and modules

RDS(on)[mΩ]

IPDD60R170CFD7IPL60R185CFD7

185
210/225

IPP60R210CFD7

280

IPP60R280CFD7

IPA60R280CFD7

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

360

Click here to learn more:
Supportwww.infineon.com/coolmos
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185Applications

Solutions

CoolMOS™ product portfolio

600 V CoolMOS™ S7
Q-DPAK BSC
incl. temperature
sensor

Q-DPAK TSC
incl. temperature
sensor10

IPQC60T010S7

IPDQ60T010S7

IPDQ60R010S7

IPQC60R010S7

17IPQC60T017S7

IPDQ60T017S7

IPDQ60R017S7

IPQC60R017S7

IPQC60T022S7

IPDQ60T022S7

IPDQ60R022S7

Q-DPAK TSC

22

IPP60R022S7

IPT60R022S7

IPT60T022S7

40

IPP60R040S7

IPT60R040S7

IPT60T040S7

IPDQ60R040S7

65

IPP60R065S7

IPT60R065S7

IPT60T065S7

IPDQ60R065S7

Q-DPAK BSC
15-300 V MOSFETs

TO-Leadless (TOLL)
incl. temperature
sensor

TO-Leadless(TOLL)

TO -220

IPQC60R040S7

500-950 V MOSFETs

RDS(on)[mΩ]

600 V CoolMOS™ C7 Gold (G-series)
TO-252(Double DPAK)28

IPT60R028G7

50

IPT60R050G7

IPDD60R050G7

80

IPT60R080G7

IPDD60R080G7

102

IPT60R102G7

IPDD60R102G7

125

IPT60R125G7

IPDD60R125G7

150

IPDD60R150G7

190

IPDD60R190G7

Digital isolators

TO-Leadless(TOLL)

Gate-driver ICs

RDS(on)[mΩ]

TO-263(D2PAK)40

IPP60R040C7

IPB60R040C760

IPP60R060C7

IPB60R060C7

IPP60R099C7

IPB60R099C7

TO-220
FullPAKTO-247

TO-247 4-pin

IPW60R017C7

IPZ60R017C7

IPW60R040C7

IPZ60R040C7

IPA60R060C7

IPW60R060C7

IPZ60R060C7

IPA60R099C7

IPW60R099C7

IPZ60R099C7

IPA60R120C7

IPW60R120C7

17

TO-252(DPAK)IPL60R065C765
99

IPL60R104C7

104
120

IPP60R120C7

IPL60R125C7

125
180

ThinPAK 8x8Intelligent powerswitches and modules

TO-220

IPP60R180C7

IPB60R180C7

IPA60R180C7

IPW60R180C7

Microcontrollers

RDS(on)[mΩ]

IGBT discretes andsilicon power diodes

600 V CoolMOS™ C7

IPD60R180C7
IPL60R185C7

185

TO-220
FullPAK

TO-220TO-263(D2PAK)

TO-247 4-pin

TO-252(DPAK)

IPP60R099P6

IPA60R099P6

125

IPP60R125P6

IPA60R125P6

160

IPP60R160P6

IPA60R160P6

IPP60R190P6

IPA60R190P6

IPW60R099P6

Powermanagement ICs

IPW60R070P6

70

IPZ60R099P6

IPW60R125P6
IPB60R160P6

IPW60R160P6
IPL60R180P6

180
190

ThinPAK 8x8

IPW60R041P6

41
99TO-247

IPW60R190P6

WBG semiconductors

RDS(on)[mΩ]

USB-C controllers
and peripherals

600 V CoolMOS™ P6

IPL60R210P6

210
IPA60R230P6

280

IPA60R280P6

380

IPA60R380P6

IPD60R380P6600

IPA60R600P6

IPD60R600P6
Sensors230

500 V CoolMOS™ CE
TO-220
FullPAK

TO-220TO-252(DPAK)

190

IPP50R190CE

IPA50R190CE

280

IPP50R280CE

IPA50R280CE

IPD50R280CE

380

IPP50R380CE

IPA50R380CE

IPD50R380CE

500

IPA50R500CE

IPD50R500CE

800

IPA50R800CE

950

IPA50R950CE

SOT-223
SupportRDS(on)[mΩ]

IPD50R950CE

1400

IPN50R1K4CE

2000

IPN50R2K0CE

Click here to learn more:
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186

Applications

Solutions

CoolMOS™ product portfolio

15-300 V MOSFETs

CoolMOS™ SJ MOSFET automotive
800 V CoolMOS™ C3A
TO-263(D²PAK)

IPW80R290C3A

2700

IPB80R290C3A
IPD80R2K7C3A

Gate-driver ICs

290

TO-252(DPAK)

TO-247500-950 V MOSFETs

RDS(on) at TJ = 25°C
VGS = 10 V[ mΩ]650 V CoolMOS™ CFDA48

TO-252(DPAK)

TO-263(D²PAK)

IPW65R048CFDA80
110

TO-247

Digital isolators

TO-220

IPW65R080CFDA
IPP65R110CFDA

150

IPW65R110CFDA

IPB65R110CFDA

IPW65R150CFDA

190

IGBT discretes andsilicon power diodes

RDS(on) at TJ = 25°C
VGS = 10 V
[ mΩ]IPB65R190CFDA

310

IPB65R310CFDA
IPD65R420CFDA

660

IPD65R660CFDA

IPB65R660CFDA

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

420

Click here to learn more:
Supportwww.infineon.com/coolmos
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TO-247

TO-247
Short leads

IPW65R022CFD7A

IPWS65R022CFD7A

IPW65R035CFD7A

IPWS65R035CFD7A

IPP65R050CFD7A

IPW65R050CFD7A

IPWS65R050CFD7A IPB65R050CFD7A

IPBE65R050CFD7A

IPP65R075CFD7A

IPW65R075CFD7A

IPWS65R075CFD7A IPB65R075CFD7A

IPBE65R075CFD7A

99

IPP65R099CFD7A

IPW65R099CFD7A

IPB65R099CFD7A

IPBE65R099CFD7A

115

IPP65R115CFD7A

IPW65R115CFD7A

IPB65R115CFD7A

IPBE65R115CFD7A

145

IPP65R145CFD7A

IPW65R145CFD7A

IPB65R145CFD7A

IPBE65R145CFD7A

190

IPP65R190CFD7A

IPW65R190CFD7A

IPB65R190CFD7A

IPBE65R190CFD7A

IPW65R230CFD7A

IPB65R230CFD7A

IPBE65R230CFD7A

TO-220TO-263-3(D²PAK 3-pin)

TO-263-7(D²PAK 7-pin)

17
22

Q-DPAK BSC

Q-DPAK TSC

IPQC65R017CFD7A

IPDQ65R017CFD7A
IPDQ65R029CFD7A

29
35
40
50

IPQC65R040CFD7A

IPDQ65R060CFD7A

60
75

IPDQ65R040CFD7A

IPDQ65R080CFD7A

80

IPQC65R125CFD7A

230

IPDQ65R125CFD7A

Digital isolators

125

IPDQ65R099CFD7A

TO-263(D2PAK)

TO-247
IPW60R045CPA

99

IPW60R099CPA

IPB60R099CPAIntelligent powerswitches and modules

45

IGBT discretes andsilicon power diodes

600 V CoolMOS™ CPA
RDS(on) at TJ = 25°C
VGS = 10 V
[ mΩ]Q-DPAK BSC

40

IPDQ60R040S7A

IPQC60R040S7A

22

IPDQ60R022S7A

IPQC60R022S7A

17

IPDQ60R017S7A

IPQC60R017S7A

10

IPDQ60R010S7A

IPQC60R010S7A

USB-C controllers
and peripherals

Q-DPAK TSC

Microcontrollers

600 V CoolMOS™ S7A
RDS(on) at TJ = 25°C
VGS = 10 V
[ mΩ]Q-DPAK BSC

IPDQ60T040S7A

IPQC60T040S7A

22

IPDQ60T022S7A

IPQC60T022S7A

17

IPDQ60T017S7A

IPQC60T017S7A

10

IPDQ60T010S7A

IPQC60T010S7A

Sensors

40

WBG semiconductors

Q-DPAK TSC

Powermanagement ICs

600 V CoolMOS™ S7A-T with integrated temperature sensor
RDS(on) at TJ = 25°C
VGS = 10 V[ mΩ]

500-950 V MOSFETs

RDS(on) at TJ = 25°C
VGS = 10 V
[ mΩ]Gate-driver ICs

650 V CoolMOS™ CFD7A

15-300 V MOSFETs

Applications

Solutions

CoolMOS™ product portfolio

Click here to learn more:
Supportwww.infineon.com/coolmos
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188Applications

Solutions

CoolMOS™ product portfolio

CoolMOS™ SJ MOSFETs – packages

15-300 V MOSFETs

SOT-223
RDS(on) [mΩ]Series

500

CE

0-59

60-89

90-149150-199200-299700

401-600

601-899

900-1500
1400

P7

600

300-400
360

>1500
2000

600

PFD7

360

600

1000/1500

2000

P7

360

450/600

1400

2000

500-950 V MOSFETs

Voltage [V]

CE
P7

1400

2400/4500

950

P7

1200

3700

Gate-driver ICs

800

Digital isolators

TO-247RDS(on) [mΩ]

650

0-59

60-89

90-149150-199P7

24/37/45

60/80

99/120

180

C7

17/40

60

99/120

180

P6

41

70

99/125160/190

CFD7

18/24/31/37/40/55 70

90/125
99

CPA

45

CM8

16/24/37/55

70

99/120

CFD7

18/29/37/41

60

90/110/125

155

C7

19/45

65

95/125

190

CFD2

41

80

110

150/190

CFDA

48

80

110

150

CFD7A

22/35/50

75

99/115/145

190

CM8

18/25/40

60

200-299

300-400

401-600

601-899

900-1500>1500

401-600

601-899

900-1500>1500

401-600

601-899

900-1500>1500

401-600

601-899

900-1500>1500

IGBT discretes andsilicon power diodes

600

SeriesIntelligent powerswitches and modules

Voltage [V]

420
230

C3

85

PFD7

60

130

290

60-89

90-149150-199200-299

60-89

90-149150-199200-299

90-149150-199200-299

310

USB-C controllers
and peripherals

950

Microcontrollers

P7

800

TO-247 short leads
0-59

650

CFD7A

22/35/50

300-400

75

WBG semiconductors

SeriesPowermanagement ICs

RDS(on) [mΩ]Voltage [V]TO-247 4-pin
RDS(on) [mΩ]Series
C7

600

0-59
17/40

60

99

19/45

65

95

P6
C7

99

Support650

300-400

Sensors

Voltage [V]TO-247 4-pin asymmetric leads
RDS(on) [mΩ]Voltage [V]600
650

Series

0-59

60-89

37/45

60/80

99

CM8

16/24/37/55

70

99

CFD7

18/29

P7

300-400

ACTIVE & PREFERRED

Click here to learn more:
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189

Applications

Solutions

CoolMOS™ product portfolio

IPAK
RDS(on) [mΩ]
P7

950

P7

0-59

60-89

90-149150-199200-299

300-400

401-600

601-899

900-1500
900/1400

600

>1500
2000/4500

15-300 V MOSFETs

Series

800

750

500-950 V MOSFETs

Voltage [V]IPAK Short Lead
RDS(on) [mΩ]Series

700

P7

0-59

60-89

90-149150-199200-299

300-400

401-600

601-899

900-1500

>1500

1400
Gate-driver ICs

Voltage [V]Digital isolators

I²PAK
RDS(on) [mΩ]
0-59

60-89

600
650
900

90-14999/125CPA

150-199200-299

300-400

401-600

601-899

900-1500>1500

900-1500>1500

165/199

C6

190

CFD2

190

C6

190

IGBT discretes andsilicon power diodes

Series

380

C3

340

500

Intelligent powerswitches and modules

Voltage [V]DPAK
RDS(on) [mΩ]

500

Series

0-59

60-89

90-149150-199CE

200-299280

CP300-400380

401-600

601-899500

950

Microcontrollers

Voltage [V]

399

P7

180

C7

180

280

360

600

380

600

360

600

P6
170

PFD7

650
700
800

210/280

CM8

180

C7

190

1000/1500

225

CFD2

420

660

CFDA

420

660

P7

950

360

600

360

450/600

750

900/1200/1400 2000/2400
3300/4500

P7

450

750

1200

PFD7

450

P7

280

900/1400

2700
2000

Sensors

C3A
950

2000

600

Power
management ICs

145

WBG semiconductors

CFD7

ACTIVE & PREFERRED

Click here to learn more:
www.infineon.com/coolmos
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Support

600

USB-C controllers
and peripherals

CE

190

Solutions

CoolMOS™ product portfolio

D²PAK
Series90-149
140

199

99

180

99/120

180

40

60

P7

45

60/80

40
55

90/110/125

155

65

95/125

190

CFD2

110

150/190

CFDA

110

190

99 /115/145

190

CFD7

41

C7

45

C3A

950

PFD7

900-1500

>1500

280

360

50

75

500-950 V MOSFETs

105

800

601-899

99
70

CFD7A

401-600

160

C7
CPA

650

300-400

15-300 V MOSFETs

P6

CFD7

200-299

50

CP

600

150-199

225
310
310

660

230

Gate-driver ICs

500

60-89

290
130

310

450

Digital isolators

C3

0-59

Applications

RDS(on) [mΩ]Voltage [V]D²PAK 7-pin
RDS(on) [mΩ]Series

650

CFD7A

0-59
50

60-89
75

90-14999 /115150-199
145/190200-299

300-400

401-600

601-899

900-1500>1500

401-600

601-899

900-1500>1500

401-600

601-899

900-1500>1500

401-600

601-899

900-1500

>1500

230

IGBT discretes andsilicon power diodes

Voltage [V]Intelligent powerswitches and modules

Double DPAK (D-DPAK)RDS(on) [mΩ]Series60-89

90-149150-19945/55

75

90/105/125/145

170

G7

50

80

102/125

150/190

CM8

37

CFD7
600

0-59

200-299

300-400180

Microcontrollers

Voltage [V]Q-DPAK TSC

650

0-59

S7

10/17/22/40

S7A

10/17/22/40

60-89

90-149150-199200-299150-199200-299

300-400

65

CFD7

17/29/40

60/80

99/125

CFD7A

17/29/40

60/80

99/125

CM8

8/18

Power
management ICs

600

Series

USB-C controllers
and peripherals

RDS(on) [mΩ]Voltage [V]Q-DPAK BSC

S7

10/17/22/40

S7A

10/17/22*/40

CFD7

17/40

CFD7A

17/40

60-89

90-149300-400

125
Sensors650

0-59

ACTIVE & PREFERRED

Click here to learn more:
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Support

600

Series

WBG semiconductors

RDS(on) [mΩ]Voltage [V]191

Applications

Solutions

CoolMOS™ product portfolio

TO-220 FullPAK
Series

0-59

60-89

90-149

CE

190

P7

60/80

99/120

C7

650

60

160/180

280

360

600

280

360

600

380

600

99/120

180

125

170

280

P6

99/125160/190230/280

95/125190110

150/190

45

65

CFD2

700

P7

800

P7

601-899800

900-1500

>1500

950

310
360
280

360

P7

950

401-600
500

180

CFD7
C7

300-400
380

140

P7S
600

280

130

310

600
450/600

750

900/1400

450

750

1200

450

IGBT discretes andsilicon power diodes

Digital isolators

PFD7

500-950 V MOSFETs

CP

200-299

Gate-driver ICs

500

150-199

15-300 V MOSFETs

RDS(on) [mΩ]Voltage [V]TO-220 FullPAK Narrow Lead
RDS(on) [mΩ]Series

0-59

60-89

90-149P7

150-199200-299

300-400

401-600

601-899

900-1500>1500

601-899

900-1500>1500

Intelligent powerswitches and modules

Voltage [V]

180

PFD7

125

CM8

210/280

360

180

P7

360

P7

360

600

Microcontrollers

700
800

USB-C controllers
and peripherals

TO-Leadless

600

0-59

60-89

90-149150-199

CFD7

35/45/55

75

90/105/125

G7

28/50

80

102/125

150

S7

22/40

65

CM8

16/24*
37/55*

70*

99*/120*

160*/180

CFD7

40

60/80

99/125

155/190200-299

300-400

401-600

Sensors

WBG semiconductors

650

SeriesPowermanagement ICs

RDS(on) group [mΩ]Voltage [V]ACTIVE & PREFERRED

Click here to learn more:*Coming soon

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192

Applications

Solutions

CoolMOS™ product portfolio

TO-220
Series

0-59

60-89

90-149

CE

190

280
280

60/80

99/120160/18060

99/120180

99/125160/190

90/125/145

170

P6
70

S7

22/40

>1500

360

210/280

CM8

16/37
41

60

90/110

155

180
190

C7

45

65

95/125

190

225

CFD2

110

150/190

CFDA

110
50/75

310

420

99 /115 /145 190

C3Digital isolators

1400

P7

800

900-1500

65

CFD7

CFD7A

601-899

Gate-driver ICs

40

CFD7

650

401-600

250

P7

600

300-400380

500-950 V MOSFETs

CP
C7200-299

650

IGBT discretes andsilicon power diodes

500

150-199

15-300 V MOSFETs

RDS(on) [mΩ]Voltage [V]ThinPAK 5x6
RDS(on) [mΩ]Series

600

PFD7

700

0-59

60-89

90-149150-199200-299

300-400
360

P7

800

401-600

601-899600

900-1500>1500

1000/1500

600

750

900/1200/1400 2000

600

750

900/1200/1400 2000

Intelligent powerswitches and modules

Voltage [V]Microcontrollers

ThinPAK 8x8
RDS(on) [mΩ]
0-59

60-89

90-149P7

65/85

105/125

185

C7

65

104/125

185

CFD7

60/75

95/115/140

160/185P6
650150-199200-299401-600

601-899

900-1500>1500

401-600

601-899

900-1500

>1500

225

180

210

CFD7

65

95/115/130

160

200

C7

70

99/130

195

230

165

CFD2

300-400

285

USB-C controllers
and peripherals

600

Series340

Powermanagement ICs

Voltage [V]Thin-TOLL 8x8

600

CM8

0-59

60-89

90-149150-199200-299

300-400

180

Sensors

Series

WBG semiconductors

RDS(on) [mΩ]Voltage [V]ACTIVE & PREFERRED

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Solutions

CoolMOS™ nomenclature

Applications

Nomenclature
P

P

20

N

60

Company
S = Formerly Siemens

C

3

DeviceP = Power MOSFET

500-950 V MOSFETs

Specifications
C3 = CoolMOSTM C3
S5 = CoolMOSTM S5
Breakdown voltage
Divided by 10 (60x10 = 600 V)

Package type
A = TO-220 FullPAK
B = TO-263 (D2PAK)
D = TO-252 (DPAK)
I = TO-262 (I2PAK)N = SOT-223
P = TO-220
U = TO-251 (IPAK)
W = TO-247
Z = TO-247 4-pin

Gate-driver ICs

Technology
N = N-channel transistors
Continuous drain current(@ TC = 25°C) [A]Digital isolators

S

15-300 V MOSFETs

Power MOSFETs (until 2005)

80

Company
I = Infineon
DeviceP = Power MOSFET
Package type (max. 2 digits)
Power THD
A = TO-220 FullPAKAW = TO-220 (Wide Creepage)
AN = TO-220 (Narrow Lead)
P = TO-220
PW = TO-220 WC IsoHole
I = TO-262 (I2PAK)S = TO-251 (IPAK Short Lead)
SA = TO-251 (IPAK Short Lead with ISO Standoff)
U = TO-251 (IPAK Long Lead)
W = TO-247
WS = TO-247 Short Lead
Z = TO-247 4-pin
ZA = TO-247 4-pin asymmetric

R

190

P7

Reliability grade
blank = Industrial
A= Automotive
S= StandardIntelligent powerswitches and modules

DD

Series name (2-4 digits)
In this case CoolMOS™ P7(max. digits e.g. CFD7)
RDS(on) [mΩ]

Microcontrollers

P

R = RDS(on)T = CoolMOS™ variant withintegrated temperature sensor
As a seperator between voltage und RDS(on)USB-C controllers
and peripherals

I

IGBT discretes andsilicon power diodes

Power MOSFETs (from October 2015 onwards)

Breakdown voltage
Divided by 10 (80x10 = 800 V)

Powermanagement ICs

Standard SMD
B = TO-263 (D2PAK)
D = TO-252 (DPAK)
N = SOT-223

WBG semiconductors

Power SMD
BE = TO-263 HV 7-pin
T = TO-Leadless
DC = TO-252 (Double DPAK) BSC
DD = TO-252 (Double DPAK) TSC
DQ = TO-252 (HDSOP Quadruple DPAK) TSC
QC = TO-252 (HDSOP Quadruple DPAK) BSC
Power leadless
L = ThinPAK 8x8
LK = ThinPAK 5x6 Kelvin source
LS = ThinPAK 5x6
TA = Thin-TOLL 8x8
TB = Thin-TOLL 5x6

Sensors

OthersC = Bare die

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Solutions

CoolMOS™ nomenclature

Company
I = Infineon
DeviceP = Power MOSFET

R

099

C

P

A
Automotive
Series name
CoolMOS™ CP, CoolMOS™ CFD, CoolMOS™ C3,
CoolMOS™ CFD7, CoolMOS™ S7
RDS(on) [mΩ]
R = RDS(on)T = CoolMOS™ variant withintegrated temperature sensor
Breakdown voltage
Divided by 10 (60x10 = 600 V)

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

Package type
B = TO-263 (D2PAK)
D = TO-252 (DPAK)
I = TO-262 (I2PAK)P = TO-220
W = TO-247
BE= TO-263 (D2PAK 7-pin)
WS = TO-247 SL
DQ = Q-DPAK TSC
QC = Q-DPAK BSC

60

15-300 V MOSFETs

P

500-950 V MOSFETs

P

Gate-driver ICs

I

Applications

Automotive MOSFETs

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Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules
Microcontrollers

Infineon support for high-voltage MOSFETs

USB-C controllers
and peripherals

Useful links and helpful information
Further information, datasheets and documents

Powermanagement ICs

www.infineon.com/coolmos
www.infineon.com/coolmos-latest-packages
www.infineon.com/coolmos-automotive

Sensors

WBG semiconductors

Evaluationboards and simulation models
www.infineon.com/coolmos-boards
www.infineon.com/powermosfet-simulationmodels

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Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules
Microcontrollers
USB-C controllers
and peripherals
Powermanagement ICs‒ MOTIX™ 6EDL7151 3-phase smart gate drive controller IC‒ MOTIX™ 160 V SOI gate-driver family‒ EiceDRIVER™ 650 V level-shift SOI gate driver family‒ EiceDRIVER™ 1200 V level-shift SOI gate driver family‒ 2EDi EiceDRIVER™ family‒ EiceDRIVER™ X3 Compact and 2L-SRC Compact‒ EiceDRIVER™ X3 Compact Gen 2 product family‒ EiceDRIVER™ X3 Compact 2ED314xMC12H family‒ EiceDRIVER™ Enhanced 1ED-F3 and X3 Analog‒ EiceDRIVER™ Enhanced X3 Digital‒ EiceDRIVER™ APD 2ED4820-EM‒ EiceDRIVER™ 1EDI302xAS/1EDI303xAS/1EDI305xAS‒ Infineon solid-state relays (SSR) technologies‒ Gate driver nomenclature

Sensors‒ Infineon gate-driver IC applications‒ Driver configuration overview‒ EiceDRIVER™ and MOTIX™ gate-driver IC‒ Choosing a gate-driver‒ Infineon gate driver IC package options‒ Gate-driver ICs for GaN HEMTs‒ Gate-driver ICs portfolio‒ Infineon solid-state relay package options‒ Gate-driver ICs for SiC MOSFETs‒ EiceDRIVER™ non-isolated low-side gate drivers‒ 2EDN EiceDRIVER™ family‒ EiceDRIVER ™ 1EDN71x6G/U family‒ EiceDRIVER™ 1EDL8011, 135 V high-side driver‒ EiceDRIVER™ 2EDL8x2x family‒ MOTIX™ 6EDL7141 high performance motor control

WBG semiconductors

Gate-driver ICs

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Solutions

EiceDRIVER™ overview

Applications

Infineon gate-driver IC applications

Gate-driver ICs

500-950 V MOSFETs

15-300 V MOSFETs

Leveraging the application expertise and advanced
technologies of Infineon and International Rectifier,
EiceDRIVER™ gate-driver ICs are well-suited for many
applications such as industrial motor drives, home
appliances, solar inverters, automotive applications, EVcharging, UPS, switch-mode power supplies (SMPS), highvoltage lighting, battery-powered applications, and so on.

Coreless transformer(CT) technology

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

Level-shifting technology(SOI and JI)

Non-isolated

Microcontrollers(N-ISO) technology

Infineon gate-driver IC technologies

Monolithic construction of groundreference gate drivers for 20 to 25 V
supply voltage applications
Comprehensive families of single- anddual-low-side drivers with flexible
options for output current, logic
configurations and UVLOs (plus nonisolated TDI)
Uses rugged and high-performancetechnologies of HVIC process or stateof-the-art 130 nm process

Silicon on insulator (SOI)

Monolithic construction of one to six
gate drive channels up to 1200 V rating

Monolithic construction of 2 to 6 gate
drive channels up to 1200 V rating

Industrial pioneering high-voltage IC(HVIC) technology used in all high-voltage gate drive applications

Built-in PN-based bootstrap diode(36 Ω typ.) for simplified bootstrap
operation & reduced PCB area

Gen 2 technology (IR prefix): Industrial
pioneering HVIC process

Negative transient immunity toprevent latch-up: -100 V for 300 ns

Gen 5 technology (IRS prefix):
Cost-effective pin-to-pin versions of
Gen 2>50 percent lower level-shift losses
for higher efficiency, higher frequency
operation, smaller heat sinks, andhigher reliability

USB-C controllers
and peripherals

Junction isolation (JI)

Coreless transformer (CT)Power
management ICs

Non-isolated (N-ISO)

Isolated GD

Two separate chips solution withmagnetic coupling providing
galvanically isolated single- anddual channel gate drivers

WBG semiconductors

Level-shift GD

IEC 60747-17 isolation technology providing isolation up to 8 kVpk VIOTM and
up to ±2300 V functional isolation
CMTI of more than 300 V/ns
Strongest gate-drive output currents(up to ±18 A) reducing need for external booster

Sensors

Non-isolated GD

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EiceDRIVER™ overview

1-channel high-side driver

Both channels allow individual
low voltage offsets, no interlock

2-channel high-side driver

Gate-driver ICs

2-channel low-side driver

500-950 V MOSFETs

Allows high voltage offset
between input and output

Allows low offset of the voltage
between input and output

IGBT discretes andsilicon power diodes

Digital isolators

Both channels allow individual highvoltage offsets, no interlock

Half-bridge driverIntelligent powerswitches and modules

High- and low-side driver

Full-bridge driver

USB-C controllers
and peripherals

Half-bridge plus single low-side driver

Microcontrollers

Two non-interlocked channels,
one for high voltage, one for low
voltage offsets. The industry may
also refer this as half-bridge.

Two interlocked channels
for shoot through protection
where one of the channels
allows a high voltage offset.

Three-phase bridge

WBG semiconductors

Synchronous-buck driversPowermanagement ICs

Four channels in a packagewith two independent half
bridges.

Half-bridge with one
additional low-side driver.

Six channels in a
package with three
independent half
bridgesSensors

High speed drivers for dual highside and low side MOSFETs insynchronous rectified buckconverters.

15-300 V MOSFETs

1-channel low-side driver

Applications

Driver configuration overview

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Solutions

EiceDRIVER™ overview

Applications

EiceDRIVER™ and MOTIX™ gate-driver IC

15-300 V MOSFETs

Gate-driver ICs serve as the interface between control signals (digital or analog controllers) and power switches(IGBTs, MOSFETs, SiC MOSFETs, and GaN HEMTs). Integrated gate driver solutions reduce design complexity,
development time, bill of materials (BOM), and board space while improving reliability over discretely-implemented
gate-drive solutions.

Gate-driver ICs

500-950 V MOSFETs

Every switch needs a driver, the right driver makes a difference. Infineon offers a comprehensive portfolio of EiceDRIVER™
gate-driver ICs with a variety of configurations, voltage classes, isolation levels, protection features, and package
options. EiceDRIVER™ gate-driver ICs are complementary to Infineon IGBT discretes and modules, silicon (CoolMOS™,
OptiMOS™, and StrongIRFETTM) and silicon carbide MOSFETs (CoolSiC™), gallium nitride HEMTs (CoolGaN™), or as partof integrated power modules (CIPOS™ IPM and iMOTION™ IPM).

Digital isolators

In addition, MOTIX™ motor gate driver ICs part of the MOTIX™ scalable product portfolio for low-voltage motor control
solutions including MOTIX™ Driver, MOTIX™ Bridge, MOTIX™ SBC, and MOTIX™ MCU (SoC/SiP).
Voltage class1

2300 V

Coreless transformer (CT)galvanic isolation - functional, basic, reinforced

IGBT discretes andsilicon power diodes

EiceDRIVER™
+ boosteror
Driver boards

UL 1577 VISO = 5.7 kV(rms) for 1 min
IEC 60747-17 VIDRM = 1767 V

Level-shift
Silicon on insulator (SOI)
Junction isolation (JI)
Voffset = 100 V, 200 V, 500 V,
600 V, 650 V, 1200 V

Microcontrollers

600 VIntelligent powerswitches and modules

1200 V

200 V
TDI (N-ISO)
25 V

Low-side (N-ISO)5 kW

7.5 kW

30 kW

Gate driver configuration

75 kW

25 V

Power
level

200 kW

25 - 105 V

200 V

500 V

600 V

650 V

1200 V

USB-C controllers
and peripherals

2.5 kW

2300 V

Isolated
High-sidePowermanagement ICs

1-Channel

Low-side
Isolated
High-side
2-Channel

WBG semiconductors

Gate drivers

Low-sideHigh-side + Low-side

4-Channel

Half-bridge

6-Channel

Three-phase

Non-isolated (N-ISO)

Sensors

Half-bridge

Junction isolation (JI)

Silicon on insulator (SOI)

Coreless transformer (CT)Support

Note 1 Voltage class on the top row is defined base on different driver configurations for the maximum Voltage class.
1. For single high-side, high-side and low-side, half bridge and three phase gate drivers, voltage class is defined as switch break down voltage in applications.
2. For low side drivers (N-ISO), voltage class is defined as maximum operating range supply voltage.
3. For special cases as 1EDNx550 (1EDN-TDI, N-ISO), voltage class is defined as maximum bus voltage (highest floating voltage it can manage).

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EiceDRIVER™ overview

Choosing a gate-driver IC
Gate driver
Isolation requirement

Galvanic isolation
Non-isolated

Functional level-shift

Basic

Functional (UL 1577)(UL 1577 + IEC 60747-17)

Reinforced (UL 1577 + IEC 60747-17)# of channels and configuration

2-Ch
1-Ch

2-Ch

4-Ch, 6-Ch,
8-Ch, 16-Ch

1-Ch

28 V
55 V
90 V

100 V
200 V
500 V
600 V
700 V

Half-bridge

High-side
and low-side

120 V
160 V
200 V
600 V
650 V
1200 V

160 V
200 V
500 V
600 V
650 V
1200 V

120 V– 2EDL803xGxx– 2EDL803xF5B– 2EDL50X3U2D*– 2EDL8034CAG3C*
160 V– 2ED274xS01G– 2ED277xS01G*
200 V (JI)
– IRS200xS
600 V (JI)
– IR(S)2153x
600 V (SOI)– 2EDL05N06– 2EDL23I06

160 V (SOI)– 2ED273xS01G
200 V (JI)
– IR2010– IRS2011S– 2EDF5215F– 2EDF5215G

4-Ch

6-Ch

Full-bridge

3-Phase

600 V

160 V
200 V
300 V
650 V
1200 V

2-Ch

2-Ch
1-Ch

Isolation on
high-side only

Isolation on highside and low-side

650 V
1200 V

650 V
1200 V

1-Ch

1-Ch

1200 V

650 V
1200 V
2300 V

Isolation on highside and low-side

Voltage class
22 V
25 V
40 V
65 V
200 V

22 V
24 V
25 V
75 V
105 V

650 V
1200 V
2300 V

650 V
2300 V

Product family
22 V– 1EDN75xx– 1EDN85xx
25 V– 1ED4417x– IRS44273
65 V (Auto)– AUIR324x
200 V (TDI)– 1EDNx550– 1EDN71x6U

22 V– 2EDN743x– 2EDN753x– 2EDN853x
25 V– IR(S)442x
75 V (Auto)– 2ED2410-EM
105 V (Auto)– 2ED4820-EM

Motor gate
driver ICs 1)– TLE956x– TLE9210x– TLE9180– TLE9140

100 V (JI)
– IRS10752L
200 V (JI)
– IRS20752L
500 V (JI)
– IR2125600 V (JI)
– IR(S)21271S– IRS25752L
600 V (Auto)– AUIRS2118
700 V (SOI)– 1ED21271S

600 V (Auto)– AUIRS2181
650 V (SOI)– 2ED2304– 2ED2103– 2ED2182
1200 V (JI)
– IR2214SS
1200 V (SOI)– 2ED1322S12M– 2ED1324S12P*Coming soon
1) Find out more on Motor gate driver ICs on page 432

500 V (JI)
– IR(S)2110S
600 V (JI)
– IR(S)2106– IRS2113– IRS2181– IRS21867
650 V (SOI)– 2ED2101S06– 2ED2106S06– 2ED2181S06– 2ED2110S06
1200 V (JI)
– IR2213
1200 V (SOI)– 2ED1321S12M– 2ED1323S12P

600 V (JI)
– IRS2453

160 V (SOI)– 6ED2742S01Q
200 V (SOI)– 6EDL04N02
300V (SOI)– 6EDL04N03PR
600 V (JI)
– IR2136S– IRS2334M
650 V (SOI)– 6EDL04I06– 6EDL04N06
1200 V (JI)
– IR2233S– IR2235S
1200 V (SOI)– 6ED2230S12– 6ED2231S12T

650 V (GaN)– 1EDF5673x– 1EDB7275F
650 V (MOSFET)– 1EDBx275F
1200 V (Compact)– 1EDIxxx12MF– 1EDIxxx12AF
1200 V (Enhanced)– 1ED020I12-F2
1200 V (Auto)– 1ED020I12FA2– 1EDI2010AS
2300 V (Compact)– 1ED31xxMU12F– 1ED31xxMU12H
2300 V (Enhanced)– 1ED34xxMU12M– 1ED38xxMU12M

650 V (Enhanced)– 2ED020I06-FI
1200 V (Enhanced)– 2ED020I12-FI

650 V (MOSFET)– 2EDBx259K– 2EDBx259x
650 V (IGBT, SiC)
– 2EDB9259Y
1200 V (Enhanced)– 2ED020I12-F2

1200 V (Enhanced)– 1ED020I12-B2

650 V (GaN)– 1EDS5663H
1200 V (1ED-SRC)– 1EDS20I12SV
1200 V (IGBT)– 1EDI302xAS
1200 V (SiC)– 1EDI303xAS– 1EDI305xAS
2300 V (Compact)– 1ED31xxMC12H– 1ED32xxMC12H
2300 V (Enhanced)– 1ED332xMC12N– 1ED34xxMC12M– 1ED38xxMC12M

650 V– 2EDR8259H,
2EDRx25xX
2300 V– 2ED314xMC12L

Solutions

Gate-driver
IC package options

LCC-32(PLCC-44)

VQFN-14(MLPQ 4X4 14L)

DSO-14150mil

LQFP-64

VQFN-28(MLPQ 5x5 28L)

DSO-14 300 mil(DSO-16
without 2 pins)

MQFP-64

VQFN-32
5x5 mm

DSO-16

SOT23-5

VQFN-34(MLPQ 7Xx7 48L)

DSO-16 300-mil(SOIC-16WB)

SOT23-6

VQFN-48

DSO-16(fine pitch)

SSOP-24

VSON-103x3 mm

DSO-18TFLGA-13

WSON-6

DSO-19TQFN-48

WSON-8

DSO-20(SOIC-20WB)TSDSO-24

CHIP

TSNP-6

TSNP-7

DSO-20(fine pitch)

DSO-20 WB

15-300 V MOSFETs

DSO-14(SOIC-14N)

500-950 V MOSFETs

VDSON-8Gate-driver ICs

DSO-36

Digital isolators

DSO-8 300-mil(SOIC-8WB)

IGBT discretes andsilicon power diodes

TSSOP-28

Intelligent powerswitches and modules

DSO-28(SOIC-28WB)

Microcontrollers

DSO-8 withpower pad

USB-C controllers
and peripherals

TSSOP-25

Power
management ICs

TSSOP-8

WBG semiconductors

DSO-24(DSO-28
without 4 pins)

Sensors

DSO-8(SOIC-8N)

Applications

Infineon gate-driver IC package options

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Gate-driver ICs for GaN HEMTs

1EDi-G1

1EDF5673K

4 A / -8 A

20 V

5V

37 ns

CMTI

Other features

200 V/ns

Gate driver ICs for high-voltage GaN power switches (CoolGaN™, GIT
technology based products), functional isolation

LGA-13 5x5mm

Gate driver ICs for high-voltage GaN power switches (CoolGaN™, GIT
technology based products), reinforced isolation, UL 1577

DSO-16 300 mil

1EDF5673F
1EDS5663H
1EDB

1EDB7275F

5 A / -9 A

20 V

1EDB8275F
1EDN-TDI

1EDN7550B 5 A / -9 A

20 V

2EDB7259Y

5 A / -9 A

2EDR7259X

300 V/ns

Separate source/sink outputs, fast start-up times and fast recovery,
basic isolation, UL 1577

DSO-8 150 mil

45 ns

n. a.

Truly differential inputs to provide high common-mode robustness

SOT23 6-pin

38 ns

150 V/ns

fast start-up times and fast output clamping, basic isolation, UL 1577 DSO-14 150 mil

38 ns

150 V/ns

fast start-up times and fast output clamping, reinforced isolation, UL
1577, VDE 0884-17, IEC 60747-17

8V
20 V

2EDB8259Y
2EDR

4V
4V
8V

5 A / -9 A

20 V

4V
8V

DSO-14 300 mil

500-950 V MOSFETs
Gate-driver ICs
Sensors

2EDR8259X

Digital isolators

DSO-16 150 mil

45 ns

8V

1EDN8550B 5 A / -9 A
2EDB

4V

PackagePowermanagement ICs

Current
VCC2
Prop
Part number peak sink/
UVLO*(-Vee2)delay
sourceWBG semiconductors

Product
familyUSB-C controllers
and peripherals

To summarize, the 1-channel and 2-channel gate-driver ICs of the EiceDRIVER™ family are the best choices to match with
Infineon’s CoolGaN™ GIT HEMTs and other 650 GaN HEMTs technologies (e.g., Schottky gate, Cascode) to achieve an
optimum combination of efficiency, power density, and robustness in high-performance power conversion applications.

IGBT discretes andsilicon power diodes

Infineon’s CoolGaN™ GIT technology is based on a hybrid-drain HEMT with p-GaN gate resulting in a robust normallyoff power switch. To deal with the particularities of this concept, an innovative differential gate-drive concept has been
implemented in tailor-made gate driver ICs of the EiceDRIVER™ 1EDx56x3 product family optimized for CoolGaN™ GIT
HEMTs. These drivers ensure robust and highly efficient operation of the high-voltage GaN switch, and at the same time
concurrently minimizing R&D efforts and shortening time-to-market. Infineon’s EiceDRIVER™ 1EDx56x3 provide negative
VGS voltage, which leads to safe off-states during switching transients. Additionally, it protects the GaN switch against
spurious turn-on, even for the first pulse or after a burst mode operation. Thanks to the integrated galvanic isolation,
Infineon’s EiceDRIVER™ GaN gate-driver ICs are best suited to drive high-voltage GaN HEMTs in hard-switching halfbridge applications, such as the totem-pole PFC topology. If the PWM signals have to cross the safe isolation barrier,such as in the resonant LLC with secondary-side control, the 1EDS5663H with reinforced isolation is the right choice.
Nevertheless, in many applications, standard gate-driver ICs with right fit UVLO protection can also be employedwhen coupled to an RC circuit to generate both the required small steady-state current and the turn-on/turn-off
peak currents. Dual-channel drivers of the EiceDRIVER™ 2EDxx259 product family feature dead-time control (DTC)and shoot-through protection (STP) to ensure safe operation in half-bridge topologies using a single IC. A hybrid gate
driving configuration for half-bridge topologies, composed of two single-channel gate driver ICs of the EiceDRIVER™
1EDBx275F and 1EDNx550B, allows optimizing the driver IC placement on the PCB in order to minimize the gate loop
parasitic inductances. This results in a PCB area saving (compared with a dual-channel gate-driver IC) and it comeswith a highly competitive bill-of-material (BOM).

Intelligent powerswitches and modules

Recommended drivers for GaN GIT HEMTs and 650 V GaN HEMTs

Microcontrollers

GaN HEMTs represent a key technology for modern power electronics systems, providing high efficiency and power
density. Infineon’s CoolGaN™ HEMT families and EiceDRIVER™ gate-driver ICs are designed to provide the best possible
performance in GaN-based systems, minimizing R&D effort and cost. Infineon offers a broad range of EiceDRIVER™
gate-driver ICs optimized for driving GaN GIT (gate injection transistor) and SG (Schottky gate) HEMTs.

15-300 V MOSFETs

Applications

Gate-driver ICs for GaN HEMTs

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Solutions

Gate-driver ICs for GaN HEMTs

Applications

Evaluation boards with gate-driver ICs for GaN GIT HEMTs
and 650 V GaN HEMTs

15-300 V MOSFETs

Our evaluation board helps you to set up and test GaN driving solutions quickly and easily.
EVAL_2EDB_HB_GAN

KIT_1EDB_AUX_GAN

High-frequency half-bridge evaluation board featuring
EiceDRIVER™ 1EDi-G1.

CoolGaN™ GIT HEMT half-bridge evaluation board with
EiceDRIVER™ 2EDB.

Complete driving solution for GaN HEMTs including an
isolated gate driver IC with a configurable floating auxiliary supply supporting unipolar and bipolar driving.

www.infineon.com/cms/en/product/evaluationboards/eval_1edf_g1b_hb_gan/

www.infineon.com/cms/en/product/evaluationboards/eval_2edb_hb_gan/

www.infineon.com/cms/en/product/evaluationboards/kit_1edb_aux_gan/

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

EVAL_1EDF_G1B_HB_GAN

IGBT discretes andsilicon power diodes

Recommended drivers for GaN SG HEMTs

1EDB

CMRstatic /CMRdynamic

1EDN7116G

2.0 A/2.0 A

150 V/200 V

1EDN7126G

1.5 A/1.5 A

Other features

Package

100 V/ns

Negative charge pump, miller clamp

PG-VSON-10

55 ns

100 V/ns

Miller clamp

PG-TSNP-7

75 ns

100 V/ns

1.0 A/1.0 A

105 ns

0.5 A/0.5 A

125 ns

1EDN7116U

2.0 A/2.0 A

1EDN7126U

1.5 A/1.5 A

150 V/200 V

4V

1EDN7136U

1.0 A/1.0 A

105 ns100 V/ns

1EDN7146U

0.5 A/0.5 A

125 ns100 V/ns

1EDB7275F

5 A / -9 A

45 ns

300 V/ns

Separate source/sink outputs, fast start-up DSO-8 150 mil
times and fast recovery, basic isolation,
UL 1577

45 ns

n. a.

Truly differential inputs to provide highcommon-mode robustness

SOT23 6-pin

38 ns

150 V/ns

Fast start-up times and fast output clamping, basic isolation, UL 1577

DSO-14 150 mil

38 ns

150 V/ns

Fast start-up times and fast output clamping, reinforced isolation, UL 1577, VDE
0884-17, IEC 60747-17

DSO-14 300 mil

20 V

8V

1EDN7550B

5 A / -9 A

1EDN8550B

5 A / -9 A

2EDB7259Y

5 A / -9 A

2EDR7259X

4V

20 V

4V
8V

20 V

4V
8V

5 A / -9 A

20 V

4V
8V

Sensors

2EDR8259X

USB-C controllers
and peripherals

1EDN7136G
1EDN7146G

2EDB8259Y
2EDR

55 ns

CMTI

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Support

2EDB

4V

Prop delay

75 ns

1EDB8275F
1EDN-TDIUVLOMicrocontrollers

Current
peak sink/
sourcePowermanagement ICs

1EDN71x6x

PN

WBG semiconductors

Product family

Intelligent powerswitches and modules

The 1EDN71x6Gx is a single-channel gate-driver IC product family optimized for driving Infineon CoolGaN™ SG HEMTs,
as well as other GaN SG HEMTs and Si MOSFETs. This gate driver includes several key features that enable a highperformance system design with fast-switching transistors, including truly differential input (TDI), four driving strength
options, active Miller clamp, bootstrap voltage clamp, and with or without adjustable charge pump in PG-SON-10 and
PG-TSNP-7 package respectively.

204

Solutions

Gate-driver ICs portfolio

Applications

Product overview

15-300 V MOSFETs

Infineon’s gate-driver IC solutions are the expert’s choice. With more than 400 reliable and efficient gate driver solutions,
we provide a comprehensive portfolio for virtually any application. To ease the selection process, this overview is structured along the configurations of the gate-driver ICs, as opposed to application topology.

5252-channel

22

UVLO on/off
Prop delay
typ. [V]off/on typ. [ns]Base PN

Technology

Features2.6/2.6

8.0/7.3

34/34

1ED44173N01BNEW

N-ISO

✓ ✓ ✓

2.6/2.6

11.9/11.0

50/50

1ED44175N01BNEW

N-ISO

✓ ✓ ✓

0.8/1.75

11.9/11.4

50/50

1ED44176N01FNEW

N-ISO✓ ✓ ✓ ✓

2.6/2.6

11.9/11.0

50/50

1ED44171N01BNEW

N-ISO

✓ ✓

1.5/1.5

10.2/9.2

50/50

IRS44273L

N-ISO

4/8

4.2/3.9

19/19

1EDN7511B

N-ISO

✓

4/8

4.2/3.9

19/19

1EDN7512B

N-ISO

✓

✓
✓
✓
✓
✓
✓

✓
✓

4/8

4.2/3.9

19/19

1EDN7512G

N-ISO

✓

✓

4/8

8.0/7.0

19/19

1EDN8511B

N-ISO

✓

✓

1.6/3.3

8.9/8

200/150

IR2121N-ISO

2.3/3.3

10.2/9.2

50/50

IRS44262S

N-ISO

✓

2.3/3.3

N.A.

50/50

IRS4426S

N-ISO✓

2.3/3.3

N.A.

50/50

IRS4427S

N-ISO✓

2.3/3.3

N.A.

65/85

IR4426S

N-ISO✓

2.3/3.3

N.A.

65/85

IR4427S

N-ISO

5/5

4.2/3.9

19/19

2EDN7523F

N-ISO

✓

5/5

4.2/3.9

19/19

2EDN7523G

N-ISO

✓

5/5

4.2/3.9

19/19

2EDN7523R

N-ISO

✓

5/5

4.2/3.9

19/19

2EDN7524F

N-ISO

✓

5/5

4.2/3.9

19/19

2EDN7524G

N-ISO

✓

5/5

4.2/3.9

19/19

2EDN7524R

N-ISO

✓

5/5

8.0/7.0

19/19

2EDN8523F

N-ISO

✓

8.0/7.0

19/19

2EDN8523R

N-ISO

✓

8.0/7.0

19/19

2EDN8524F

N-ISO

✓

5/5

8.0/7.0

19/19

2EDN8524R

N-ISO

✓

4/4

4.2/3.9

19/19

2EDN7424F

N-ISO

✓

4/4

4.2/3.9

19/19

2EDN7424R

N-ISO

✓

4/4

4.2/3.9

19/19

2EDN7434FNEW

N-ISO

✓
✓

4/4

4.2/3.9

19/19

2EDN7434RNEW

N-ISO

4.2/3.9

19/19

2EDN7533BNEW

N-ISO

✓

✓

5/5

5/5

✓
✓

✓ ✓

5/5

✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓

5/5

4.2/3.9

19/19

2EDN7533FNEW

N-ISO

✓

5/5

4.2/3.9

19/19

2EDN7533RNEW

N-ISO

✓

5/5

4.2/3.9

19/19

2EDN7534UNEW

N-ISO

5/5

4.2/3.9

19/19

2EDN7534BNEW

N-ISO

✓
✓
✓
✓

5/5

4.2/3.9

19/19

2EDN7534FNEW

N-ISO

✓

5/5

4.2/3.9

19/19

2EDN7534RNEW

N-ISO

✓

5/5

4.2/3.9

19/19

2EDN7534GNEW

N-ISO

✓

5/5

8.0/7.0

19/19

2EDN8533FNEW

N-ISO

✓

5/5

8.0/7.0

19/19

2EDN8533RNEW

N-ISO

✓

5/5

8.0/7.0

19/19

2EDN8534FNEW

N-ISO

✓

5/5

8.0/7.0

19/19

2EDN8534RNEW

N-ISO

✓

Gate-driver ICs

Package
Digital isolators

OUTB

IGBT discretes andsilicon power diodes

22

INB

Intelligent powerswitches and modules

1-channel

VCC

Microcontrollers

25

IO+/IOtyp. [A]COM

USB-C controllers
and peripherals

Voltageclass [V]OUTA
To load

INB

Configuration

INA

Power
management ICs

INA

✓
✓
✓

WBG semiconductors

OUT

✓
✓
✓
✓

Sensors

VCC

COM

NC

SOT23-5
SOT23-6
WSON-6
WSON-8TSSOP-8
TSNP-6

IN

NC

DIP-8

To load

To loadIN

DisableEnableFault reporting
Overcurrent protection
Programmable fault clear time
Separate sink/source outputs
DSO-8

Typical connection

500-950 V MOSFETs

Non-isolated low-side gate-driver IC

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205

Solutions

Gate-driver ICs portfolio

Applications

Non-isolated TDI gate-driver IC

Base PN

4/8

4.2/3.9

45/45

1EDN7550U

N-ISO

✓

✓

4.2/3.9

45/45

1EDN7550B

N-ISO

✓

✓

✓

4/8

8.0/7.0

45/45

1EDN8550B

N-ISO

✓

✓

✓

4/8

12.2/11.5

45/45

1EDN6550BNEW

N-ISO

✓

✓

✓

4/8

14.9/14.4

45/45

1EDN9550BNEW

N-ISO

✓

✓

✓

2/2

3.85/3.75

55/55

1EDN7116GNEW

N-ISO

2/2

3.85/3.75

55/55

1EDN7116U *N-ISO

1.5/1.5

3.85/3.75

75/75

1EDN7126GNEW

N-ISO

1.5/1.5

3.85/3.75

75/75

1EDN7126U *

N-ISO

1/1

3.85/3.75

105/105

1EDN7136GNEW

N-ISO

1/1

3.85/3.75

105/105

1EDN7136U *N-ISO

0.5/0.5

3.85/3.75

125/125

1EDN7146GNEW

N-ISO

0.5/0.5

3.85/3.75

125/125

1EDN7146U *

N-ISO

✓
✓
✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

500-950 V MOSFETs

VSON-10

TSNP-7

Package

4/8✓

TSNP-6

SOT23-6

15-300 V MOSFETs

Features

Truly differential inputs

Separate sink/source outputs

Technology

Gate-driver ICs

Prop delay
off/on typ. [ns]Digital isolators

UVLO on/off
typ. [V]✓✓

IGBT discretes andsilicon power diodes

200

IO+/IOtyp. [A]

✓
✓
✓
✓
✓
✓

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

1-channel

Voltageclass [V]Intelligent powerswitches and modules

Configuration

Active Miller clamp

Adustable Negative charge pump

Typical connection

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206

Solutions

Gate-driver ICs portfolio

LO (x3)

VSS

COM

To
load

DC- bus

1200

650

600

300

IO+/IOtyp. [A]UVLO
Prop delay
on/off typ. [V] off/on typ. [ns]Base PN

Technology

Features

Package

0.35/0.65

12.2 / 11.3

600/600

6ED2231S12TNEW

SOI

✓ ✓ ✓

✓

✓

✓ ✓

✓

✓

0.35/0.65

11.4/10.4

600/600

6ED2230S12T

SOI

✓ ✓ ✓

✓

✓

✓ ✓

✓

✓

0.25/0.5

8.6/8.2

700/750

IR2233S

JI

✓

✓ ✓

✓ ✓ ✓

0.25/0.5

8.6/8.2

700/750

IR2233J

JI

✓

✓ ✓

✓ ✓ ✓

0.25/0.5

10.4/9.4

700/750

IR2235S

JI

✓

✓ ✓

✓ ✓ ✓

✓
✓
✓

0.25/0.5

10.4/9.4

700/750

IR2235J

JI

✓

✓ ✓

0.165/0.375

9.0/8.1

490/530

6EDL04N065PR*

SOI

✓ ✓ ✓

✓

✓

✓ ✓ ✓

✓
✓

0.165/0.375

11.7/9.8

490/530

6EDL04I065PR*

SOI

✓ ✓ ✓

✓

✓

✓

0.165/0.375

11.7/9.8

490/530

6EDL04I065NR*

SOI

✓ ✓ ✓

✓

✓

0.165/0.375

9.0/8.1

490/530

6EDL04N065NT*

SOI

✓ ✓ ✓

✓

✓

✓

0.165/0.375

11.7/9.8

490/530

6EDL04I065PT*

SOI

✓ ✓ ✓

✓

✓

✓

0.165/0.375

11.7/9.8

490/530

6EDL04I06NT

SOI

✓ ✓ ✓

✓

✓

✓

✓

0.165/0.375

11.7/9.8

490/530

6EDL04I06PT

SOI

✓ ✓ ✓

✓

✓

✓

✓

0.165/0.375

9/8.1

530/530

6EDL04N06PT

SOI

✓ ✓ ✓

✓

✓

✓

✓

0.2/0.35

8.9/8.2

400/425

IR2136S

JI

✓ ✓

✓

✓

✓ ✓

0.2/0.35

11.1/10.9

400/425

IR21363S

JI

✓ ✓

✓

✓

✓

0.2/0.35

10.4/9.4

530/500

IR21364S

JI

✓ ✓

✓

✓

✓

0.2/0.35

11.1/10.9

530/530

IRS2334M

JI

0.2/0.35

11.1/10.9

530/530

IRS2334S

JI

0.2/0.35

8.9/8.2

530/530

IRS2336DJ

JI

✓ ✓ ✓

✓

✓

0.2/0.35

8.9/8.2

530/530

IRS2336DS

JI

✓ ✓ ✓

✓

✓

✓

✓

0.2/0.35

8.9/8.2

530/530

IRS23364DS

JI

✓ ✓ ✓

✓

✓

✓

✓

0.25/0.5

9/8.7

425/675

IR2130S

JI

✓

✓ ✓

✓

✓

0.25/0.5

9/8.7

425/675

IR2130J

JI

✓

✓ ✓

✓

0.25/0.5

9/8.7

425/675

IR2132S

JI

✓

✓ ✓

✓

0.25/0.5

9/8.7

425/675

IR2132J

JI

✓

✓ ✓

✓

0.25/0.5

8.6/8.2

700/750

IR2133S

JI

✓

✓ ✓

✓

✓

0.25/0.5

8.6/8.2

700/750

IR2133J

JI

✓

✓ ✓

✓

✓

✓

✓

✓

IGBT discretes andsilicon power diodes

Voltageclass [V]✓✓✓0.25/0.5

10.4/9.4

700/750

IR2135J

JI

✓

✓ ✓

✓

0.165/0.375

9.0/8.1

530/530

6EDL04N03PR*

SOI

✓ ✓ ✓

✓

✓

✓

✓

✓
✓

✓

✓

✓
✓

✓

✓
✓
✓

0.165/0.375

11.7/9.8

490/530

6ED003L02-F2

SOI

✓ ✓

✓

✓

✓

0.165/0.375

9/8.1

530/530

6EDL04N02PR

SOI

✓ ✓ ✓

✓

✓ ✓

✓

160

1/2

7.5/6.8

100/100

6ED2742S01QNEWSOI✓ ✓ ✓ ✓ ✓ ✓60

1.5/1.5

5.8/4.5

140/140

6EDL7141SOI✓ ✓✓ ✓ ✓ ✓ ✓ ✓✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓✓✓Sensors

200

Intelligent powerswitches and modules

VS (x3)ITRIP

Microcontrollers

RCIN

USB-C controllers
and peripherals

HO (x3)Power
management ICs

VB (x3)FAULT

WBG semiconductors

HIN
LIN
EN

500-950 V MOSFETs

Brake chopper
Desaturation protection
EnableFault reporting
Integrated bootstrap diode
Operaltional amplifier
Overcurrent protection
Power Management Unit
Programmable dead time
Programmable Fault Clear/Reset
Programmable OCP Reference Threshold
Programmable Op-amp Voltage Gain
Trickle Charge Pumps (100% duty cycle)
Separate pin for logic ground
Shoot-through protection
Shutdown
Two stage turn on
DSO-20 WB
DSO-24
DSO-28 WB
LCC-32
MQFP-64TSSOP-25
TSSOP-28
VQFN-28
VQFN-32
VQFN-34
VQFN-48
CHIP

VCC

Gate-driver ICs

DC+ bus

Digital isolators

Typical connection

15-300 V MOSFETs

Applications

Three-phase gate-driver ICs

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207

Gate-driver ICs portfolio

Half-bridge and high- and low-side gate-driver IC
Typical connection

1200

650

600

500

200

160

120

IO+/IOtyp. [A]UVLO on/off
typ. [V]Prop delay
off/on typ. [ns]1.5/2.52/2.5
2/3
2.3/2.3
2.3/2.3
2.3/4.6
2.3/4.6
0.29/0.7
0.29/0.7
0.29/0.7
0.29 / 0.7
0.29/0.7
0.29/0.7
0.29/0.7
0.29/0.7
0.29/0.7
0.29/0.7
0.29/0.7
0.36/0.7
2.5/2.5
2.5/2.5
2.5/2.5
2.5/2.5
2.5/2.5
2.5/2.5
2.5/2.5
2.5/2.5
1.5/2.5
0.078/0.169
0.078/0.169
0.18/0.26
0.18/0.26
0.18/0.26
0.18/0.26
0.2/0.35
0.2/0.35
0.2/0.35
0.2/0.35
0.2/0.35
0.2/0.35
0.2/0.35
0.2/0.35
0.2/0.35
0.2/0.35
0.2/0.35
0.2/0.35
0.21/0.36
0.21/0.36
0.21/0.36
0.21/0.36
0.21/0.36
0.21/0.36
0.21/0.36
0.21/0.36
0.22/0.48
0.25/0.5
0.25/0.5
0.25/0.5
0.29/0.6
0.29/0.6
0.29/0.6
0.29/0.6
0.29/0.6
0.29/0.6
0.29/0.6
0.29/0.6
0.36/0.7
0.36/0.7
0.36/0.7
0.36/0.7
0.36/0.7
1.9/2.3
1.9/2.3
1.9/2.3
1.9/2.3
1.9/2.3
1.9/2.3
1.9/2.3
1.9/2.3
1.9/2.3
1.9/2.3
1.9/2.3
1.9/2.3
1.9/2.3
1.9/2.3
2.5/2.5
2.5/2.5
2.5/2.5
2.5/2.5
2/3
2.3/2.8
2.3/2.8
4/4
4/4
4/4
2.5/2.5
2.5/2.5
0.29/0.6
0.29/0.6
0.29/0.6
0.29/0.6
0.29/0.6
0.29/0.6
1/1
1/1
3/3
1/2
1/2
2/4
2/4
4/8
4/8
1.0/2.0
4.0/8.0
3/6
4/6
3/6
4/6
3/6
4/6
3/6
4/6

12.2/11.2
10.2/9.3
10.2/9.3
12.2/11.3
12.2/11.3
12.2/11.3
12.2/11.3
8.9/8.0
8.9/8.0
8.9/8.0
8.9 / 8.0
9.1/8.2
9.1/8.2
9.1/8.2
9.1/8.2
9.1/8.2
9.1/8.2
9.1/8.2
9.1/8.3
9.1/8.2
9.1/8.2
9.1/8.2
9.1/8.2
9.1/8.2
9.1/8.2
9.1/8.2
9.1/8.2
12.2/11.2
8.9/8.2
8.9/8.2
9/8
9/8
11/9
11/9
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
4.1/3.8
4.1/3.8
4.1/3.8
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.9/7.7
8.6/8.2
8.6/8.2
8.6/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.6/8.2
8.9/8.2
8.9/8.2
9.1/8.3
9.1/8.3
12.5/11.6
12.5/11.6
12.5/11.6
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.6/8.2
8.6/8.2
8.5/8.2
8.5/8.2
10.2/9.3
9.1/8.3
12.5/11.6
8.9/8.2
8.9/8.2
6/5.5
8.6/8.2
8.5/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
9/8.2
9/8.2
8.6/8.2
5/4.5
5/4.5
5/4.5
5/4.5
5/4.5
5/4.5
8.2/7.7
8.2/7.7
7/6.5
7/6.5
7/6.5
7/6.5
7/6.5
7/6.5
7/6.5
7/6.5

85/85
225/280440/440
500/500
350/350
500/500
350/350
90/90
90/90
90/90
90 / 90200/200
200/200
200/200
200/200
200/200
200/200
200/200
300/310200/200
200/200
200/200
200/200
200/200
200/200
200/200
200/200
85/85
220/220220/220
N.A.
N.A.
N.A.
N.A.
200/220200/220200/220200/220200/750200/750200/220200/220200/220200/220200/220200/750
150/160
150/160
150/160
150/680
150/680
150/680
200/220200/220500/500
150/750
105/125
130/135
150/680
150/680
200/220200/750200/750
150/750
150/150200/220300/310300/310400/420400/420400/420220/180
220/180
220/180
220/180
220/180
220/180
220/180
220/180
220/180
270/680
270/680
270/680
270/680
270/680
94/12094/120120/130
120/130440/440300/310400/420
170/170
170/170
170/170
94/120120/130
150/160
150/160
150/160
150/160
150/680
150/680
75/80
60/60
65/95
50/50
50/50
65/65
65/65
65/65
65/65
50/50
65/65
47/47
47/47
47/47
47/47
47/47
47/47
47/47
47/47

Base PN

Technology

2ED020I12-FI
IR2213S
IR2214SS
2ED1324S12PNEW
2ED1323S12PNEW

CT
JI
JI
SOI
SOI

2ED1322S12MNEW
2ED1321S12M NEW
2ED2101S06FNEW
2ED2103S06FNEW
2ED2104S06FNEW
2ED2388S06F*NEW
2ED2106S06F
2ED21064S06J
2ED2108S06F
2ED21084S06J
2ED2109S06F
2ED21094S06J
2ED21091S06F
2ED2304S06F
2ED2181S06F
2ED21814S06J
2ED2182S06F
2ED21824S06J
2ED2183S06F
2ED21834S06J
2ED2184S06F
2ED21844S06J
2ED020I06-FI
IR2304S
IR25601S
IR21531S
IR25603S
IRS2153DS
IRS21531DS
IR2106S
IR21064S
IR2108S
IR21084S
IR2109S
IR21094S
IR2308S
IR25606S
IR25604S
IR2301SIRS2301S
IR2302S
IR2101S
IRS2101S
IR2102S
IR2103S
IR2104S
IR25602S
IRS2106S
IRS21064S
IRS2890DS
IR2111S
IR2112SIRS2112S
IRS2103S
IRS2104S
IRS2108S
IRS2109S
IRS21091S
IRS2111S
IRS2304S
IRS2308S
2EDL05N06PF
2EDL05N06PJ
2EDL05I06PF
2EDL05I06PJ
2EDL05I06BF
IRS2181S
IR2181S
IR21814S
IRS21814S
IRS21814M
IRS2183S
IR2183S
IR21834S
IRS21834S
IRS2184S
IR2184S
IR21844SIRS21844S
IRS21844M
IR2113S
IR25607S
IRS2113S
IRS2113M
IR2114SS
2EDL23N06PJ
2EDL23I06PJ
IRS2186S
IRS21864S
IRS21867S
IR2110S
IRS2110S
IRS2005S
IRS2005M
IRS2007S
IRS2007M
IRS2008S
IRS2008M
IR2011S
IRS2011S
IR2010S
2ED2732S01G NEW
2ED2742S01G NEW
2ED2734S01G *
2ED2744S01G *
2ED2738S01G NEW
2ED2748S01GNEW
2ED2772S01G*
2ED2778S01G*
2EDL8033G4B*
2EDL8034G4B*
2EDL8033G4C*
2EDL8034G4C*
2EDL8033G3C*
2EDL8034G3C*
2EDL8033F5B*
2EDL8034F5B*

SOI
SOI
SOI
SOI
SOI
SOI
SOI
SOI
SOI
SOI
SOI
SOI
SOI
SOI
SOI
SOI
SOI
SOI
SOI
SOI
SOI
SOI
CT
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
SOI
SOI
SOI
SOI
SOI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
SOI
SOI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
SOI
SOI
SOI
SOI
SOI
SOI
SOI
SOI
JI
JI
JI
JI
JI
JI
JI
JI

Features
✓

✓

✓
✓

✓
✓
✓

✓
✓

✓
✓

✓

✓
✓

✓
✓

✓
✓
✓

✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓

✓
✓

✓
✓

✓
✓
✓
✓
✓
✓

✓

✓

✓
✓

✓

✓

✓

✓

✓

✓

✓

✓
✓
✓
✓

✓
✓
✓
✓
✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓
✓
✓
✓
✓

✓
✓
✓

✓

✓
✓

✓
✓
✓

✓
✓

✓
✓
✓

✓
✓

✓
✓

✓
✓
✓

✓
✓
✓
✓
✓
✓
✓
✓
✓
✓

✓
✓

✓
✓
✓

✓
✓
✓
✓
✓
✓

✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓

✓
✓
✓
✓

✓
✓
✓

✓
✓
✓

✓
✓

✓
✓
✓

✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓

✓

✓
✓

✓
✓
✓
✓
✓
✓
✓
✓
✓

✓
✓

✓
✓
✓
✓

✓
✓

✓
✓
✓
✓
✓
✓
✓
✓
✓

✓
✓

✓
✓

CHIP

VQFN-14

VSON-10

SSOP-24

VDSON-8

✓
✓

✓

✓
✓

✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓

✓
✓
✓

✓
✓
✓
✓

✓

✓
✓
✓
✓
✓
✓

✓
✓

✓

✓
✓
✓
✓

✓
✓
✓
✓
✓
✓
✓
✓

✓
✓
✓
✓
✓

✓

✓
✓

✓

✓

✓

✓
✓

✓

✓

✓

✓
✓

✓
✓

✓

✓
✓
✓
✓

✓

✓
✓
✓
✓
✓

✓
✓

✓
✓

✓
✓

✓

✓
✓
✓

✓

✓

✓

✓
✓
✓

✓

✓

✓
✓
✓

✓

✓
✓

✓
✓
✓
✓

✓

✓
✓
✓
✓

✓

✓
✓
✓
✓
✓
✓
✓
✓
✓

✓
✓
✓

✓

✓

✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓

✓

✓

✓
✓

✓
✓

✓
✓
✓
✓
✓

✓

✓
✓
✓
✓
✓
✓

✓
✓

✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓

✓

✓

✓

✓

✓
✓
✓
✓
✓
✓
✓
✓
✓

✓

✓

✓

✓
✓
✓

✓
✓

DSO-20WB (20 fine pitch leads)

Package✓✓

DSO-18

DSO-16 WB

DSO-16

DSO-14

DSO-8

Two stage turn-on

Soft overcurrent shutdown

Shutdown

Shoot-through protection

Comparator
Voltageclass [V]Separate pin for logic groundTo loadCOM LO

Self-oscillating

VS

Programmable shutdown

SD

Programmable Fault Clear/ResetSD

Programmable dead timeHO

Overcurrent protection

IN

Integrated bootstrap diodeIN

Fault reporting

VB

Operational amplifier

VCC

EnableUp to 1200 V

Desaturation protection

VCC

✓
✓
✓
✓
✓
✓
✓
✓

✓
✓
✓
✓

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208

Solutions

Gate-driver ICs portfolio

Applications

Full-bridge gate-driver ICs
Typical connection
VB1 142 COM

HO1 13

HO2 9

7 LO2

VS2

LOAD

8

–AC rectified line

600

0.18/0.26

11/9

Base PN

Technology
JI

✓

✓

✓

Package✓

Digital isolators

IRS2453DS

Features

DSO-8

UVLO on/off
typ. [V]Overcurrent protection

IO+/IOtyp. [A]Fault reporting

Voltageclass [V]500-950 V MOSFETs

6 LO1

Gate-driver ICs

11

VB2 10

DSO-14NC

Shutdown

5 SD

VS1 12

Shoot-through protection

4 RT

Integrated bootstrap diode3 CT

IRS2453(1)D

1 VCC

15-300 V MOSFETs+AC rectified line

IGBT discretes andsilicon power diodes

Single high-side gate-driver ICs
Typical connection

VCC

500

200

100

Technology

Features✓✓✓Intelligent powerswitches and modules
Microcontrollers

Prop delay
Base PN
off/on typ. [ns]TSNP-6

to load

SOT23-6

VS

Package

4.0/4.0

7.2/6.8

50/50

1ED21271S07F*

SOI

0.16/0.24

9/8

215/140

IRS25752L

JI✓

0.25/0.5

8.6/8.2

105/125

IR2117S

JI

0.25/0.5

8.6/8.2

105/125

IR2118S

JI

0.25/0.5

10.3/9150/200

IR2127S

JI

✓

✓

✓

0.25/0.5

10.3/9150/200

IR2128S

JI

✓

✓

✓

0.25/0.5

7.2/6.8

150/200

IR21271S

JI

✓

✓

✓

0.29/0.6

8.6/8.2

105/125

IRS2117S

JI

0.29/0.6

8.6/8.2

105/125

IRS2118S

JI

0.29/0.6

10.3/9150/150

IRS2127S

JI

✓

✓

✓

0.29/0.6

7.2/6.8

150/150

IRS21271S

JI

✓

✓

✓

1.6/3.3

9.2/8.3

200/170

IR2125S

JI✓✓

0.16/0.24

9/8

215/140

IRS20752L

JI

✓

4/8

4.2/3.9

5/45

1EDN7550B

TDI

✓

4/8

8/7

45/45

1EDN8550B

TDI

✓

4/8

12.2/11.5

45/45

1EDN6550B

TDI

✓

4/8

14.9/14.4

45/45

1EDN9550B

TDI

✓

4/8

4.2/3.9

45/45

1EDN7550U

TDI

0.16/0.24

9/8

215/140

IRS10752L

JI✓✓

USB-C controllers
and peripherals

600

IN

✓

✓

Power
management ICs

700

UVLO on/off
typ. [V]HO✓✓WBG semiconductors

IO+/IOtyp. [A]

COM

✓
✓

Sensors

Voltageclass [V]VB

DSO-16 WB

IN

VCC

Integrated bootstrap diodeUp to 200 V

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209

Gate-driver ICs portfolio

Configuration

1-channel

2-channel

2-channel(Isolation on
high-side only)

Voltageclass [V]

Isolation type

Reinforced
Functional
Reinforced
Functional
Reinforced
Functional
Reinforced
Functional
Functional
Functional
Reinforced
Functional
Reinforced
Functional
Functional
Functional
Functional
Functional
Reinforced
Reinforced
Reinforced
Reinforced
2300
Reinforced
Reinforced
Reinforced
Reinforced
Reinforced
Reinforced
Reinforced
Reinforced
Reinforced
Reinforced
Functional
Reinforced
Functional
Reinforced
Functional
Reinforced
Functional
Reinforced
Functional
Reinforced
Functional
Basic
Basic
Functional
Functional
Reinforced
Functional
Functional
Functional
Functional
Functional
Functional
Functional
Functional
Functional
Functional
Functional
Functional
Functional
Functional
Functional
Functional
1200
Functional
Functional
Functional
Functional
Functional
Functional
Functional
Functional
Functional
Functional
Functional
Functional
Functional
Functional
Functional
Functional
Functional
Reinforced
Functional
Functional
Reinforced
Reinforced
Reinforced
Reinforced
Reinforced
Reinforced
Reinforced
Reinforced
Functional
Reinforced
Reinforced
Reinforced
Reinforced
Reinforced
Reinforced
Reinforced
Reinforced
Reinforced
Reinforced
1200**
Reinforced
Basic
Basic
Basic
Basic
Basic
Basic
Functional
Functional
Functional
Functional
Functional
1200 Functional on high side
650
Functional on high side
250
Functional on high side
250

Functional on high side

Isolation rating

IO+/IOtyp. [A]UVLO on/off
Prop delay
typ. [V]off/on typ. [ns]

VIORM = 1.7 kV(rms); VIOTM=8 kV; VISO = 5.7 kV(rms)
VISO = 5.7 kV(rms)
VIORM = 1.7 kV(rms); VIOTM=8 kV; VISO = 5.7 kV(rms)
VISO = 5.7 kV(rms)
VIORM = 1.7 kV(rms); VIOTM=8 kV; VISO = 5.7 kV(rms)
VISO = 5.7 kV(rms)
VIORM = 1.7 kV(rms); VIOTM=8 kV; VISO = 5.7 kV(rms)
VISO = 5.7 kV(rms)
VISO = 3 kV(rms)
VISO = 3 kV(rms)
VIORM = 1.7 kV(rms); VIOTM=8 kV; VISO = 5.7 kV(rms)
VISO = 5.7 kV(rms)
VIORM = 1.7 kV(rms); VIOTM=8 kV; VISO = 5.7 kV(rms)
VISO = 5.7 kV(rms)
VISO = 3 kV(rms)
VISO = 3 kV(rms);
VISO = 3 kV(rms);
VISO = 3 kV(rms);
VIORM = 1.767 kV(rms); VIOTM = 8 kV(rms); VISO = 5.7 kV(rms)
VIORM = 1.767 kV(rms); VIOTM = 8 kV(rms); VISO = 5.7 kV(rms)
VIORM = 1.767 kV(rms); VIOTM = 8 kV(rms); VISO = 5.7 kV(rms)
VIORM = 1.767 kV(rms); VIOTM = 8 kV(rms); VISO = 5.7 k Vrms
VIORM = 1.767 kV(rms); VIOTM = 8 kV(rms); VISO = 5.7 k Vrms
VIORM = 1.7 kV(rms); VIOTM=8 kV; VISO = 5.7 kV(rms)
VIORM = 1.7 kV(rms); VIOTM=8 kV; VISO = 5.7 kV(rms)
VIORM = 1.7 kV(rms); VIOTM=8 kV; VISO = 5.7 kV(rms)
VIORM = 1.7 kV(rms); VIOTM=8 kV; VISO = 5.7 kV(rms)
VIORM = 1.7 kV(rms); VIOTM=8 kV; VISO = 5.7 kV(rms)
VIORM = 1.7 kV(rms); VIOTM=8 kV; VISO = 5.7 kV(rms)
VIORM = 1.7 kV(rms); VIOTM=8 kV; VISO = 5.7 kV(rms)
VIORM = 1.7 kV(rms); VIOTM=8 kV; VISO = 5.7 kV(rms)
VIORM = 1.7 kV(rms); VIOTM=8 kV; VISO = 5.7 kV(rms)
VISO = 5.7 kV(rms)
VIORM = 1.7 kV(rms); VIOTM=8 kV; VISO = 5.7 kV(rms)
VISO = 5.7 kV(rms)
VIORM = 1.7 kV(rms); VIOTM=8 kV; VISO = 5.7 kV(rms)
VISO = 5.7 kV(rms)
VIORM = 1.7 kV(rms); VIOTM=8 kV; VISO = 5.7 kV(rms)
VISO = 5.7 kV(rms)
VIORM = 1.7 kV(rms); VIOTM=8 kV; VISO = 5.7 kV(rms)
VISO = 5.7 kV(rms)
VIORM = 1.7 kV(rms); VIOTM=8 kV; VISO = 5.7 kV(rms)
VISO = 5.7 kV(rms)
VIORM = 1.4 kV; VIOTM=6 kV; VISO = 3.7 kV(rms)
VIORM = 1.4 kV; VIOTM=6 kV; VISO = 3.7 kV(rms)
VISO = ± 1.2 kV
VISO = ± 1.2 kV
VIORM = 1.4 kV(rms); VIOTM=8 kV; VISO = 5.7 kV(rms)
VIOTM = 4.2 kV(peak); VISO = 3 kV(rms)
VIOTM = 4.2 kV(peak); VISO = 3 kV(rms)
VIOTM = 4.2 kV(peak); VISO = 3 kV(rms)
VIOTM = 4.2 kV(peak); VISO = 3 kV(rms)
VIOWM = 510 V(rms); VISO = 1.5 kV(rms)
VIOWM = 460 V(rms); VISO = 1.5 kV(rms)
VISO = ± 1.2 kV
VISO = ± 1.2 kV
VISO = 2.5 kV(rms)
VISO = ± 1.2 kV
VISO = ± 1.2 kV
VISO = 2.5 kV(rms)
VISO = ± 1.2 kV
VISO = ± 1.2 kV
VISO = 2.5 kV(rms)
VISO = ± 1.2 kV
VISO = ± 1.2 kV
VISO = 2.5 kV(rms)
VISO = ± 1.2 kV
VISO = ± 1.2 kV
VISO = 2.5 kV(rms)
VISO = ± 1.2 kV
VISO = ± 1.2 kV
VISO = 2.5 kV(rms)
VISO = ± 1.2 kV
VISO = ± 1.2 kV
VISO = 2.5 kV(rms)
VISO = ± 1.2 kV
VISO = ± 1.2 kV
VISO = 2.5 kV(rms)
VISO = ± 1.2 kV
VISO = ± 1.2 kV
VISO = 2.5 kV(rms)
VIORM = 1.4 kV(rms); VIOTM=8 kV; VISO = 5 kV(rms)
VISO = 5 kV(rms)
VISO = ± 1.2 kV
VIORM = 1.767 kV(rms); VIOTM = 8 kV(rms); VISO = 5.7 kV(rms)
VIORM = 1.767 kV(rms); VIOTM = 8 kV(rms); VISO = 5.7 kV(rms)
VIORM = 1.767 kV(rms); VIOTM = 8 kV(rms); VISO = 5.7 kV(rms)
VIORM = 1.767 kV(rms); VIOTM = 8 kV(rms); VISO = 5.7 kV(rms)
VIORM = 1.767 kV(rms); VIOTM = 8 kV(rms); VISO = 5.7 kV(rms)
VIORM = 1.767 kV(rms); VIOTM = 8 kV(rms); VISO = 5.7 kV(rms)
VIORM = 1.767 kV(rms); VIOTM = 8 kV(rms); VISO = 5.7 kV(rms)
VIORM = 1.767 kV(rms); VIOTM = 8 kV(rms); VISO = 5.7 kV(rms)
VISO = ± 1.2 kV
VIORM = 1.4 kV(rms); VIOTM=8 kV; VISO = 5.7 kV(rms)
VIORM = 1.4 kV(rms); VIOTM=8 kV; VISO = 5.7 kV(rms)
VIORM = 1.4 kV(rms); VIOTM=8 kV; VISO = 5.7 kV(rms)
VIORM = 1.4 kV(rms); VIOTM=8 kV; VISO = 5.7 kV(rms)
VIOTM = 4.2 kV(peak); VISO = 5.7 kV(rms)
VIOTM = 4.2 kV(peak); VISO = 5.7 kV(rms)
VIOTM = 4.2 kV(peak); VISO = 5.7 kV(rms)
VIOTM = 4.2 kV(peak); VISO = 5.7 kV(rms)
VIOTM = 4.2 kV(peak); VISO = 5.7 kV(rms)
VIOTM = 4.2 kV(peak); VISO = 5.7 kV(rms)
VIOTM = 4.2 kV(peak); VISO = 5.7 kV(rms)
VIORM = 800 V(rms); VIOTM=3.5 kV; VISO = 2.5 kV(rms)
VIORM = 800 V(rms); VIOTM=3.5 kV; VISO = 2.5 kV(rms)
VIORM = 1 kV(rms); VIOTM=4.2 kV; VISO = 3 kV(rms)
VIORM = 1 kV(rms); VIOTM=4.2 kV; VISO = 3 kV(rms)
VIORM = 1 kV(rms); VIOTM=4.2 kV; VISO = 3 kV(rms)
VIORM = 1 kV(rms); VIOTM=4.2 kV; VISO = 3 kV(rms)
VIOWM = 510 V(rms); VISO = 1.5 kV(rms)
VIOWM = 510 V(rms); VISO = 1.5 kV(rms)
VIOWM = 460 V(rms); VISO = 1.5 kV(rms)
VIOWM = 510 V(rms); VISO = 1.5 kV(rms)
VIOWM = 510 V(rms); VISO = 1.5 kV(rms)
VISO = ± 1.2 kV
VISO = ± 650 V
VISO = ±250 V (high-side to low-side)

5.5/5.5
5.5/5.5
5.5/5.5
5.5/5.5
5.5/5.5
5.5/5.5
10/9
10/9
10/9
10/9
13.5/1413.5/1413.5/1413.5/1413.5/14
6/6.5
6/6.5
6/6.5
6.5 / 6.5
6.5 / 6.5
6.5 / 6.5
6.5 / 6.5
6.5 / 6.5
10/10
10/10
18/18
18/18
3.3/6
6/8.5
6/8.5
6/8.5
3.8/2.5
3.8/2.5
3.8/2.5
3.8/2.5
7.5/5
7.5/5
7.5/5
7.5/5
11/7.5
11/7.5
11/7.5
11/7.5
2/2
2/2
2/2
2/2
4/8
5.4/9.8
5.4/9.8
5.4/9.8
5.4/9.8
4/8
4/8
1.3/0.9
1.3/0.9
1.3/0.9
2.2/2.3
2.2/2.3
2.2/2.3
4/3.5
4/3.5
4/3.5
4/3.5
4/3.5
4/3.5
4.4/4.1
4.4/4.1
4.4/4.1
5.9/6.2
5.9/6.2
5.9/6.2
7.5/6.8
7.5/6.8
7.5/6.8
10/9.4
10/9.4
10/9.4
10/9.4
10/9.4
10/9.4
SRC/2
SRC/2
SRC/2
6.5 / 6.5
6.5 / 6.5
6.5 / 6.5
6.5 / 6.5
6.5 / 6.5
6.5 / 6.5
6.5 / 6.5
6.5 / 6.5
2/2
1/2
1/2
4/8
4/8
5/9
5/9
5/9
5/9
5/9
5/9
5/9
5/9
5/9
5/9
5/9
5/9
5/9
1/2
4/8
4/8
4/8
4/8
1.5/2.5
1.5/2.5
5.2/9.2

10/8
10/8
12.5/10.5
12.5/10.5
12.5/10.5
12.5/10.5
10/8
10/8
12.5/10.5
12.5/10.5
10/8
10/8
12.5/10.5
12.5/10.5
12.5/10.5
8.5/9.3
11/12
12.5/13.6
11.0/12.0
12.5/13.6
11.0/12.0
12.5/13.6
Adjustable12.5/10.4
12.5/10.4
12.5/10.4
12.5/10.4
12.6/10.4
12.6/10.4
14.2/11.9
12.6/10.4
12.6/10.4
12.6/10.4
Adjustable
Adjustable12.6/10.4
12.6/10.4
Adjustable
Adjustable12.6/10.4
12.6/10.4
Adjustable
Adjustable
12/11
12/11
12/11
12/11
5.0/4.5
12.2/11.5
4.2/3.9
8/7
14.9/14.4
5/4.5
5/4.5
12/11.1
12/11.1
12/11.1
12/11.1
12/11.1
12/11.1
9.1/8.5
12/11.1
12/11.1
12/11.1
12/11.1
12/11.1
12/11.1
12/11.1
12/11.1
12/11.1
12/11.1
12/11.1
12/11.1
12/11.1
12/11.1
9.1/8.5
12/11.1
12/11.1
12/11.1
12/11.1
12/11.1
11.9/1111.9/1111.9/11
8.5 / 9.3
11.0/12.0
12.5/13.6
14.7/16.0
8.5/9.3
11.0/12.0
12.5/13.6
14.7/16.0
12/11
4.2/3.9
8/7
8/7
14.9/14.4
4.2/3.9
8/7
8/7
14.9/14.4
8/7
12.2/11.5
14.9/14.4
4.2/3.9
8/7
8/7
4.2/3.9
8/7
14.9/14.4
4.2/3.9
4.2/3.9
4.2/3.9
8/7
14.9/14.4
12.2/11.2
12.2/11.2
7/6.4

90/90
90/90
90/90
90/90
280/280
280/280
90/90
90/90
90/90
90/90
90/90
90/90
90/90
90/90
90/90
45/45
45/45
45/45
45 / 45
45 / 45
45 / 45
45 / 45
45 / 45
110/110110/110110/110110/110
86/80
86/80
86/80
86/80
236/244236/244236/244236/244236/244236/244236/244236/244236/244236/244236/244236/244
165/170
1750/1750
165/170
1750/1750
37/37
45/45
45/45
45/45
45/45
37/37
37/37
300/300
300/300
300/300
300/300
300/300
300/300
120/115
125/120125/120300/300
300/300
300/300
300/300
300/300
300/300
300/300
300/300
300/300
300/300
300/300
300/300
120/115
125/120125/120300/300
300/300
300/300
460/460
460/460
460/460
50 / 50
50 / 50
50 / 50
50 / 50
50 / 50
50 / 50
50 / 50
50 / 50
165/170
37/37
37/37
37/37
37/37
38/36
38/36
38/36
38/36
38/36
38/36
38/36
38/36
38/36
38/36
38/36
38/36
38/36
37/37
37/37
37/37
37/37
37/37
85/85
85/85
37/37

5.2/9.2

7/6.4

37/37

VISO = ±250 V (high-side to low-side)

Base PN

Technology

1ED3120MC12HNEW
1ED3120MU12HNEW
1ED3121MC12HNEW
1ED3121MU12H NEW
1ED3131MC12HNEW
1ED3131MU12HNEW
1ED3122MC12H NEW
1ED3122MU12H NEW
1ED3125MU12FNEW
1ED3127MU12FNEW
1ED3123MC12HNEW
1ED3123MU12HNEW
1ED3124MC12HNEW
1ED3124MU12HNEW
1ED3124MU12FNEW
1ED3140MU12FNEW
1ED3141MU12FNEW
1ED3142MU12FNEW
1ED3141MC12H*
1ED3142MC12H*
1ED3143MC12H*
1ED3144MC12H*
1ED3145MC12H*
1ED3240MC12HNEW
1ED3250MC12HNEW
1ED3251MC12HNEW
1ED3241MC12HNEW
1ED3320MC12NNEW
1ED3321MC12NNEW
1ED3322MC12NNEW
1ED3323MC12NNEW
1ED3431MC12MNEW
1ED3431MU12MNEW
1ED3830MC12MNEW
1ED3830MU12MNEW
1ED3461MC12MNEW
1ED3461MU12MNEW
1ED3860MC12MNEW
1ED3860MU12MNEW
1ED3491MC12MNEW
1ED3491MU12MNEW
1ED3890MC12MNEW
1ED3890MU12MNEW
1ED020I12-B2
1ED020I12-BT
1ED020I12-F2
1ED020I12-FT
1EDS5663H
1EDB6275F
1EDB7275F
1EDB8275F
1EDB9275F
1EDF5673F
1EDF5673K
1EDI05I12AF
1EDI05I12AH
1EDC05I12AH
1EDI10I12MF
1EDI10I12MH
1EDC10I12MH
1EDI20N12AF
1EDI20H12AH
1EDC20H12AH
1EDI20I12AF
1EDI20I12AH
1EDC20I12AH
1EDI20I12MF
1EDI20I12MH
1EDC20I12MH
1EDI30I12MF
1EDI30I12MH
1EDC30I12MH
1EDI40I12AF
1EDI40I12AH
1EDC40I12AH
1EDI60N12AF
1EDI60H12AH
1EDC60H12AH
1EDI60I12AF
1EDI60I12AH
1EDC60I12AH
1EDS20I12SV
1EDU20I12SV
1EDI20I12SV
2ED3140MC12L*
2ED3141MC12L*
2ED3142MC12L*
2ED3143MC12L*
2ED3144MC12L*
2ED3145MC12L*
2ED3146MC12L*
2ED3147MC12L*
2ED020I12-F2
2EDS7165H
2EDS8165H
2EDS8265H
2EDS9265H

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2EDR7259X
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2EDB7259K
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2EDB8259F
2EDB7259Y
2EDB8259Y
2EDB9259Y
2EDF7175F
2EDF7275F
2EDF7275K
2EDF8275F
2EDF9275F
2ED020I12-FI
2ED020I06-FI
2EDF5215F

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www.infineon.com/driver-gan-sg
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SRC = Turn on slew rate control

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VSON-8TFLGA-13 (5x5)

TFLGA-13 (4x4)

DSO-36

DSO-18

DSO-16 300 mil

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DSO-16 fine pitch 300 mil

DSO-16 150mil

DSO-14 300 mil (DSO-16 without 2pin)

DSO-14 150mil

DSO-8 300mil

DSO-8 150mil

VDE 0884-10/11

UL 1577

Two-level Slew rate control

Two-level turn-off

Soft off

Shutdown

Shoot-through protection

Separate sink/source outputs

Separate pin for logic ground

Operational amplifier (OPAMP)

Overcurrent protection

Package✓✓✓✓www.infineon.com/gdfinder** Isolation between primary and secondary. If the driver is used in half-bridge configuration, the channel-to-channel will limit the working voltage		Fault reset

Features

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Fault reporting

GND2

+15 V

Fast output clamping for supply below UVLO

IN-

1μ

EnableVCC2DisableIN+

Digital I2C configurability

CLAMP

Desaturation protection

IN

GND1

10R

Deadtime control

SGND

OUT+

Comparator

100n

VCC1

Active Miller clamp+5 V

Analog configurability (Desat, soft-off)

Galvanic isolated gate-driver ICs

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Gate-driver ICs portfolio

BufferDesaturation protection
EnableFault reporting
Operational amplifier
Overcurrent protection
Programmable frequency
Programmable dead timeSelf-oscillating (Oscillator)
Separate pin for logic ground
Shoot-through protection
Shutdown
SPI Interface
Synchronous rectification
Two-level turn-off
Soft-off
UL 1577
VDE 0884-11
ISO 26262 readyISO 26262 compliant
DSO-8
DSO-14
DSO-16 NB
DSO-16 WB
DSO-20 (sine pitch)
DSO-28
DSO-36TSDSO-24

Automotive gate driver ICs

Configuration

1-channel isolated

Half-bridge

High-side and lowside

Single high-side
Dual high-side

Voltageclass [V]

1200

100

600

IO+/IOtyp. [A]UVLO on/off
typ. [V]Prop delay
off/on typ. [ns]Base PN

Technology

Features

Package

12/12

12.6/11.8

60/60

1EDI3020ASCT✓ ✓ ✓ ✓

✓

✓ ✓

✓

✓ ✓

✓

✓

12/12

12.6/11.8

60/60

1EDI3021ASCT✓ ✓ ✓ ✓

✓

✓ ✓

✓

✓ ✓

✓

✓

12/12

12.6/11.8

60/60

1EDI3023ASCT✓ ✓ ✓ ✓

✓

✓ ✓

✓

✓ ✓

✓

✓

12/12

12.6/11.8

60/60

1EDI3030ASCT✓ ✓ ✓ ✓

✓

✓ ✓

✓

✓ ✓

✓

✓

12/12

12.6/11.8

60/60

1EDI3031ASCT✓ ✓ ✓ ✓

✓

✓ ✓

✓

✓ ✓

✓

✓

12/12

12.6/11.8

60/60

1EDI3033ASCT✓ ✓ ✓ ✓

✓

✓ ✓

✓

✓ ✓

✓

✓

12/12

12.6/11.8

60/60

1EDI3050ASNEWCT✓ ✓ ✓ ✓

✓

✓

✓ ✓

✓

✓

✓ ✓

✓

✓

12/12

12.6/11.8

60/60

1EDI3051ASNEWCT✓ ✓ ✓ ✓

✓

✓

✓ ✓

✓

✓

✓ ✓

✓

✓

12/12

12.6/11.8

60/60

1EDI3025AS*NEWCT✓ ✓ ✓ ✓

✓

✓ ✓

✓ ✓ ✓

✓

✓

12/12

12.6/11.8

60/60

1EDI3026AS*NEWCT✓ ✓ ✓ ✓

✓

✓ ✓

✓ ✓ ✓

✓

✓

12/12

12.6/11.8

60/60

1EDI3028AS*NEWCT✓ ✓ ✓ ✓

✓

✓ ✓

✓ ✓ ✓

✓

✓

12/12

12.6/11.8

60/60

1EDI3035AS*NEWCT✓ ✓ ✓ ✓

✓

✓ ✓

✓ ✓ ✓

✓

✓

12/12

12.6/11.8

60/60

1EDI3036AS*NEWCT✓ ✓ ✓ ✓

✓

✓ ✓

12/12

12.6/11.8

60/60

1EDI3038AS*NEWCT✓ ✓ ✓ ✓

✓

✓ ✓

1/1

7.3/6.8

N.A.

AUIR2085S

JI

1.9/2.3

8.9/8.2

135/135AUIRS21811S

JI

1.9/2.3

8.9/8.2

200/160AUIRS21814S

JI

1.9/2.3

8.9/8.2

200/160AUIRS2181S

JI

✓

✓

✓ ✓

✓

✓

✓ ✓ ✓

✓

✓

✓ ✓ ✓ ✓

✓
✓
✓

✓
✓

3.5/3.5

8.9/8.2

90/90

AUIRS2191S

JI

0.2/0.35

4.1/3.8200/220AUIRS2301S

JI

65

0.3/0.3

10/6.52500/2500

AUIR3241STR

N-ISO

✓ ✓

✓

65

0.3/0.3

10/6.52500/2500

AUIR3242STR

N-ISO

✓ ✓

✓

75

0.3/1.4

12.5/10.0

4000/7000

2ED2410-EMNEW

N-ISO

✓ ✓

✓

105

0.3/1.0

7.0/6.6

3000/3000

2ED4820-EMNEW

N-ISO

✓ ✓

✓

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✓

✓
✓

✓

✓

✓

✓

✓

Solutions

Gate-driver ICs portfolio

Applications

Complementary: Opto-isolated solid state relays
Typical connection

SMT-8 (with 4 pins)

PVA3354N✓✓

PVA3324N✓

PVA3055N✓

Load current [mA]RDS(on)[Ω]

Isolation
voltage [VRMS]

140 AC-DC

27/7

4000

120 AC-DC

35/9

4000

PVT412L✓

240 AC-DC

6/2

4000

PVT412A✓✓

140 AC-DC

27/7

4000

PVT412✓✓120 AC-DC

35

4000

PVT422

Base PN

160

4000

170 AC-DC

15/4.25

4000

PVT312L

190 AC-DC

10/3

4000

PVT312170 AC-DC

8

4000

PVT322A

170 AC-DC

10

4000

PVT322200

150 AC-DC

24

4000

PVA2352N

150

550 AC-DC

0.7/0.25

4000

PVT212550 DC

1.5

4000

250

100

Gate-driver ICs

PVA3054N

✓
✓

✓

✓
✓
✓
✓

✓
✓

✓

PVD1354N✓✓

PVD1352N✓✓

PVA1354N✓

375 AC-DC

5

4000

PVA1352N✓✓

1500 DC

0.25

4000

PVDZ172N✓✓

2000 AC/4000 DC

0.1/0.035

4000

PVG612A✓✓

1000 AC/2000 DC

0.5/0.15

4000

PVG612✓✓

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

60✓

IGBT discretes andsilicon power diodes

50 AC-DC✓Intelligent powerswitches and modules

4000

✓

Microcontrollers

24✓

Digital isolators

PVU414150 AC-DC
300

SMT-8

4

DIP-8

3

LOAD

SMT-6

5

DIP-6

2

DIP - 4Microelectronic relays (MER) are power
MOSFET or IGBT output photovoltaic relays
where the output switch is controlled byradiation from a GaAlAs light emitting diode(LED) optically isolated from the output.
MERs are a good choice to replacemechanical relays.

500-950 V MOSFETs

6

+

Load
voltage [V]15-300 V MOSFETs

AC or DC
1

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212Applications

SolutionsGate-driver ICs portfolio

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

15-300 V MOSFETs

Infineon solid state relay package options

IGBT discretes andsilicon power diodes

Complementary: Opto-isolated solid state relays
Typical connection

Output voltage
DC [V]

Short current[µA]

Nominal control
current (DC) [mA]

Isolation
voltage [VRMS]

Base PN

Intelligent powerswitches and modules
Microcontrollers(+) 5

Package

5/10

10/5

5

3570

PVI5033R

✓

✓

5/10

10/5

10

2500

PVI1050N

✓

✓

5

8

10

4000

PVI5080N

5

5

10

4000

PVI5050N✓✓✓

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals(-) 3

SMT-8 (with 4 pins)

CathodeDIP-8 (with 4 pins)

DC

SMT-8

Photovoltaic isolators generate an electrically isolated DC voltage upon receipt of a DC input signal
and are capable of directly driving MOSFET or IGBT
gates. The output is controlled by radiation from a
GaAlAs light emitting diode (LED) optically isolated
from the output

(+) 2

DIP-8

(-) 8

Anode

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Solutions

Gate-driver ICs portfolio

Applications

Coreless Transformer Solid State Isolators

15-300 V MOSFETs

ISSI20RXXH, ISSI30RXXH

Out

EoCT
rectifierand logic

CT driverand logic

PoCT 3.3 V
supply

GND 1

Temp.
or current
protection

Q1

GND 2
PTC

TC/TS
GND 2

Vcc1

C1
Q6

EoCT

Out

EoCT
rectifierand logic

CT driverand logic

GND 1

PoCT 3.3 V
supplyiSSI20R11H

RSNS
OTP, OCP,UVLO (ZCD)
protections

iSSI20R02H TTL /CMOS 2.85 V – 175 uA
3.5 V
iSSI20R03H

Gate-driver ICs

Vout typFeatures

13 V (at Vin = 2.3 V>17 V at Vin= 3.4 V

TS/CS + MC DSO-8-66

Package

DSO-8-66

iSSI20R11H TTL /CMOS 2.85 V – 400 mA 13 V (at Vin = 2.3 V
3.5 V>17 V at Vin= 3.4 V

TS, CS

DSO-8-66

iSSI30R11H TTL /CMOS 2.85 V – 400 mA 13 V (at Vin = 2.3 V
3.5 V>17 V at Vin= 3.4 V

CS, TS, MC(2)

DSO-16-33

iSSI30R12H TTL /CMOS 2.85 V – 400 mA 13 V (at Vin = 2.3 V
3.5 V>17 V at Vin= 3.4 V

CS, TS, MC(2),
D-Sense(30R12H)

DSO-16-33

PTC

MC1
Out

EoCT
rectifierand logic

GND 1

TS: Temperature Sense (input pin for overtemperature protection)
CS: Current Sense (input pin for overcurrent protection)
MC: Miller Clamp
D-Sense: Diode Sense (30R12H Only)

GND 2
Q6
RSNS

OTP, OCP,UVLO (ZCD)
protections

iSSI30R11/12H

Iout
peak

Intelligent powerswitches and modules

C1
EoCT

IN

VCC
range

Q2

Vcc1

CT driverand logic

GND 2

Vin range

PoCT 3.3 V
supplyGND 2
PTC

Microcontrollers

IN

Part
NumberDigital isolators

C1

Q2
CS

TS

USB-C controllers
and peripherals

Features and benefits
Product benefits– Replaces PVI and improves circuit performances– No need for isolated supply for the output stage, smaller BOM– Direct drive of switches’ gate, no need for series/parallel– Switches protection in temperature and current, avoids CdV/dT effect by Miller Clamp– Ensures safe switching transition of MOSFETs

Power
management ICs– Large input voltage range, compatible with photovoltaic isolators.
– Self-supplied output stage with very high output short circuit– Very high output voltage, suitable for MOSFETs and IGBTs– Thermal protection– Overcurrent protection– Miller Clamp– Fast turn-off / on of output devices– Power on reset and safety clamp on input stage

WBG semiconductors

Product features

Full Featured Evaluation Board:
EVAL-iSSI30R12H
EVAL-iSSI30R12H is intended for evaluating the productfeatures of Infineon’s iSSI solid-state isolator, iSSI30R12H, in an
application circuit.
‒ Evaluation board with iSSI30R12H and two CoolMOS™
IPT60T022S7 MOSFETs in an AC switch configuration‒ Ultrafast overcurrent detection that is triggered at the typicalpeak current of 35 A
‒ Direct-chip temperature measurement of CoolMOS™ withshutdown at 155°C‒ Fast turn-on‒ Fast turn-off after overcurrent and overtemperature
protection‒ Dynamic Miller clamping

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214

Sensors

IN

MC1
EoCT

SupportiSSI20R02/03H

Product specifications at a glance

IGBT discretes andsilicon power diodes

Typical connection diagram

500-950 V MOSFETs

The new Infineon Solid State Isolator (SSI) family of products use Infineon’s Coreless Transformer technology for ahigh-performance isolator. They allow driving high power and low on-state resistance MOSFETs, thus allowing to
replace SCRs and TRIACs with the advantage of dramatically reducing the power dissipation and extending the field
application range of the SSR. Solid State Relays (SSR) built by using the SSI can easily replace most Electromechanical
Relay (EMR) in a wide range of power applications where conventional SSR had no success until today. The new SSI
come also with precise and fast-acting protection functions such as Miller Clamp, overcurrent, and overtemperature
protections to achieve unprecedented reliability and availability of SSR designs.

Applications

SolutionsGate-driver ICs portfolio

Features

Ensures a safe IGBT off-state in case the output chip is not connected to the power supply or an undervoltage lockout isin effect

Brake chopper

BRAKE

Integrated brake IGBT driver with protection

Comparator

CMP

General purpose comparator included

Desaturation protection

DESAT

Protects the IGBT at short circuit

EnableEN

Dedicated pin terminates all outputs

Fault reporting

FAULT-RPT

Indicates an overcurrent or undervoltage shutdown has occurred

Fault reset

FAULT-RST

Dedicated pin resets the DESAT-FAULT-state of the chip

High-voltage start-up

HVSTART

Provides easy and fast circuit start-up while enabling low circuit standby losses

Integrated bootstrap diode

BSD

Integrated bootstrap reduces BOM

Operational amplifier

OPAMP

An independent op-amp for current measurement or overcurrent detection

Oscillator

OSC

Integrated front end oscillator

Over-current protection(ITRIP)

OCP

Ensures safe application operation in case of overcurrent

Programmable dead time

DT-PROG

Dead time is programmable with external resistor for flexible design

Programmable fault clear time FLTC

The length of the fault clear time period (tFLTC) is programmed by external capacitor which connected between FLTC andVSS (CFLTC).

Programmable shutdown

A shutdown feature has been designed into a pin

SD-PROG

Dedicated pin or logic ground for improved noise immunity

Separate sink/source outputs SEP-OUT

Simplifies gate resistor selection, reduces BOM, and improves dV/dt control

Shoot-through protection

STP

Additional shoot-through protection logic such as interlock

Short-circuit clamping

SC-CLAMP

During short circuit the IGBT’s gate voltage tends to rise because of the feedback via the Miller capacitance. An additional protection circuit connected to OUT+ limits this voltage to a value slightly higher than the supply voltage.

Shutdown

SD

Dedicated pin disables the IC outputs

Soft overcurrent shutdown

SD-SOFT

Dedicated pin turns off the desaturated transistor, preventing overvoltages

Truly Differential Inputs

TDI

Control inputs independent from gate driver GND, robust against ground shifts from power MOSFET switching

Two-level turn-off

TLTO

Lowers VCE overshoots at turn-off during short circuits or overcurrent events

UL 1577

UL

Double galvanic isolation certification

Undervoltage lockout

UVLO

Ensures safe application operation by avoiding unexpected driver behavior at low voltages

VDE 0884-10 or VDE 0884-11

VDE

Reinforced galvanic isolation certifications for non-optical couplers

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Separate pin for logic ground SEP-GND

Gate-driver ICs

SD-ACT

Digital isolators

Active shutdown

IGBT discretes andsilicon power diodes

Protection against inadvertent dynamic turn-on because of parasitic Miller effects

500-950 V MOSFETs

Benefits

M-CLAMPIntelligent powerswitches and modules

Abbreviation

Active Miller clamp

Microcontrollers

Features15-300 V MOSFETs

Addressing various application requirements, Infineon delivers solutions with an assortment of features intended to
optimize performance, minimize size and reduce cost. Below is a table of additional gate-driver IC features available inthe current portfolio.

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Solutions

Gate-driver ICs for
SiC MOSFETs

Applications

Gate driver ICs for SiC MOSFETs

15-300 V MOSFETs

Ultrafast switching from 650 V to 2000 V power transistors, such as CoolSiC™ SiC MOSFETs, can be more easily handled
by isolated gate driver solutions.

Part number

Typ. current

VCC2
-VEE2

UVLO

Prop. delay(accuracy)

CMTI

Isolated

Other key features

Gate-driver ICs

Product family

500-950 V MOSFETs

The following EiceDRIVER™ gate driver ICs incorporate the most important key features for driving SiC MOSFET suchas tight propagation delay matching, precise input filters, wide output supply voltage range, negative gate voltage
capability, extended CMTI capability, Miller clamp, and DESAT protection.

Package

20 V

14.9/14.4 V 45 ns (+6/-4 ns)
12.2/11.5 V

300 V/ns✓

Separate source/sink outputs,
fast start-up times and fast recovery, basic isolation, UL 1577

DSO-8,
150 mil

EiceDRIVER™ 2EDi
2-channel family

2EDR9259X
2EDR9258X
2EDR6258X

5/9 A

20 V

14.9/15.4 V 38 ns (+9/-5 ns) 150 V/ns
14.9/15.4 V
12.5/11.5 V✓

2EDi Gen 2, dead-time control,
disable/enable, reinforced
isolation, UL 1577, VDE-11, IEC
62368-1, GB4943.1

DSO-14,300mil14.9/15.4 V✓

2EDi Gen 2, dead-time control,
basic isolation, UL 1577,
GB4943.1

DSO-14,150 mil
SOT23-6

2EDB9259Y

EiceDRIVER™ 1EDN-TDI
1-channel family

1EDN6550B
1EDN9550B

4/8 A

20 V

12.2/11.5 V 45 ns (+10/-7 ns) N/A
14.9/14.4 V–

Separate source/sink outputs

EiceDRIVET™ X3 Compact
2-channel family

2ED3146MC12L

6.5/6.5 A

35 V

12.5 / 13.6 V 50 ns (+/- 8ns)✓

Active shutdown, dead-time (DT) DSO-14,
control with arm shoot-through 300mil
prevention in half-bridge operation, Individual channel control
operation (DT: open or tied to
VCC1), Enable, Reinforced isolation IEC 60747-17, UL 1577

EiceDRIVER™ 1ED Compact
1-channel family

1EDI20I12MF

4A

20 V

12.7/10.5 V 300 ns

100 V/ns✓

1EDI60N12AF

10 A

35 V

10/8 V

125 ns100 V/ns✓

EiceDRIVER™ X3 Compact
1-channel family

1ED1342MU12F

6.5/6.5 A

35 V

12.5 /
13.6 V

45 ns (+/- 7ns)

300 V/ns✓

Active shutdown, functional isolation UL 1577

DSO-8, 150
mil

EiceDRIVER™ 2L-SRC Compact 1ED3145MC12H
1-channel family

6.5/6.5 A

35 V

12.5 /
13.6 V

45 ns (+/- 7ns)

300 V/ns✓

Active shutdown, reinforced isolation IEC 60747-17, UL 1577

DSO-8, 300
mil

1ED32xxMC12H

10/18 A

35 V

12.5/10.4 V 110 ns (+/- 15 ns) 200 V/ns✓

Two-level slew-rate control,
DSO-8,
Miller clamp, reinforced isolation, 300 mil
UL 1577 and VDE-11

300 V/ns

IGBT discretes andsilicon power diodes

5/9 AIntelligent powerswitches and modules

1EDB9275F
1EDB6275F

Digital isolators

Achieve high efficiency and power density: take advantage of low propagation delay and high CMTI
EiceDRIVER™ 1EDB
1-channel family

Avoid parasitic turn-on: take advantage of Miller clamp options

USB-C controllers
and peripherals

Microcontrollers

Miller clamp, functional isolation DSO-8,
150 mil
Separate source/sink outputs,
functional isolation

1ED332xMC12N

3/6 A

35 V

12.6/10.4 V 85 ns
13.6/12.6 V

300 V/ns✓

Miller clamp, short circuit protec- DSO-16,
tion, soft-off, reinforced isolation, 300 mil
UL 1577 and VDE-11

EiceDRIVER™ X3 Analog
1-channel family

1ED34x1MC12M

3/6/9 A

35 V

12.6/10.4 V 244 ns (+/- 30 ns) 200 V/ns✓

Analog configurable, fast andDSO-16,accurate short circuit protection 300 mil
and soft turn-off Miller clamp,
reinforced isolation, UL 1577 and
VDE-11

EiceDRIVER™ X3 Digital
1-channel family

1ED38x0MC12M

3/6/9 A

35 V

12.6/10.4 V 244 ns (+/- 30 ns) 200 V/ns
default, but
adjustable✓

Digital configurable (I2C), fast and DSO-16,
accurate short circuit protection, 300 mil
rich monitoring functionality(predictive maintenance)
Miller clamp, reinforced isolation,
UL 1577 and VDE-11

EiceDRIVER™ 2ED-F22-channel family

2ED020I12-F2

2A

28 V

12.6/10.4 V 170 ns✓

Miller clamp, short circuit
protection

DSO-36,300milSensors

50 V/ns

WBG semiconductors

EiceDRIVER™ 1ED-F31-channel familyPowermanagement ICs

Short-circuit protect your CoolSiC™: take advantage of the fast and accurate DESAT protection

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Digital isolators

The family also includes 1ED44171N01B, a cost-effective, simple driver with enable and fault reporting functions. Witha single PCB layout, 1ED44171N01B can be used as a second source option to the popular IRS44273L. Enabling a singlesupplier, dual sourcing strategy for fast-reacting supply flexibility.

IGBT discretes andsilicon power diodes

Simplified application diagram
Vin+
VCC
Microcontroller

1ED44175N01B

VDD

VCC

OUT

I/O2

EN/FLT

COM

I/O1

IN

OCP

15-300 V MOSFETs

EiceDRIVER™ 1ED4417x family are 25 V, 1-channel low-voltage, non-inverting, low-side gate drivers designed for groundreferenced applications such as power-factor correction (PFC) circuits. Typically, overcurrent protection (OCP) is
implemented by a current measurement with a comparator and multiple resistors and capacitors. The 1ED44176N01F,
1ED44175N01B, and 1ED44173N01B provides up to 20 percent cost and 50 percent space savings by integrating afast and accurate OCP. The new family of low-side gate drivers utilize Infineon’s proprietary latch immune CMOS
technologies to enable a rugged monolithic construction while realizing best-in-class fault reporting accuracy with OCP
threshold tolerance of +/-5 percent. In addition, Infineon’s IC technology enables a tiny
PG-SOT23 package (or DSO-8 for 1ED44176N01) by combining the fault output and enable functions into a single pin.

500-950 V MOSFETs

1ED4417x, 1-ch, low-side drivers with integrated protection features

Gate-driver ICs

EiceDRIVER™ non-isolated low-side gate drivers

Applications

Solutions

EiceDRIVER™ highlight products

CFLTCIntelligent powerswitches and modules

RFLTC

RCS

Gnd

Part Number

Package

IO± [A]UVLO [V]

VOCTH [mV]Ton/off [ns]Ground pins

Feature1ED44171N01B

SOT23-5

2.6/2.6 A

11.9/11.4 V

N/A

50/50 ns

COM

Enable, Fault, cost-effective
OCP (negative current sensing),
Enable, Fault

SOT23-6

2.6/2.6 A

8/7 V-250 mV

34/34 ns

COM

SOT23-6

2.6/2.6 A

11.9/11.4 V-250 mV

50/50 nsCOM

1ED44176N01F

DSO-8

0.8/1.75 A

11.9/11.4 V

500 mV

50/50 ns

VSS/COM

OCP (positive current sensing),
Enable, Fault, Programmable fault
clear time

USB-C controllers
and peripherals

1ED44173N01B
1ED44175N01B

Microcontrollers

Vin-

Power
management ICs

Evaluation and reference board

Sensors

WBG semiconductors› EVAL-1ED44176N01F› EVAL-1ED44175N01B› EVAL-1ED44173N01B› EVAL-PFC5KIKWWR5SYS› REF-SHA35WRC2SYS› REF-AIRCON-C302A-IM564

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Applications

Solutions

EiceDRIVER™ highlight products

2EDN EiceDRIVER™ family

500-950 V MOSFETs
Gate-driver ICs

EiceDRIVER™ 2EDN family: Fast, precise and compatible‒ Highly efficient SMPS enabled by 19 ns propagation delay and 2 ns
channel-to-channel mismatch precision for fast MOSFET and WBG switches‒ Diversified applications driven by strong output current 4 A/5 A per channel‒ Unique designs are supported by the availability of numerous packages

Applications‒ Server‒ Telecom‒ DC-DC Converters‒ Power tools‒ Industrial SMPS
‒ Low speed electrical vehicles‒ Solar power inverter‒ LED lighting

Digital isolators

EiceDRIVER™ 2EDN family overview
Dual-channel driver ICs are the crucial link between control ICs and powerful
MOSFET, wide band gap (WBG) switching devices. Driver ICs enable highsystem level efficiencies, excellent power density and consistent systemrobustness.

15-300 V MOSFETs

Rugged, fast, dual-channel low-side 4 A/5 A gate-driver ICs– High power efficiency– in hard switching PFC with SiC diode– in half-bridges and synchronous rectifications– True rail-to-rail low impedance output stages– Low power dissipation in driver IC– Cooler driver IC operation– Higher FETs drive capability– 4 V and 8 V UVLO options, with active output– Fast and reliable FETs turn-off,– Instant FETs protection under abnormal operation– -10 V robustness of control and enable inputs– Increased GND-bounce robustness– Crucial safety margin to drive pulse transformer– 5 A reverse output current robustness– Saves switching diodes– Increases power density– BOM savings– 2 independent channels– Option to increase drive current by truly concur-– One IC covering many applications– Industry standard pinout and packages– Straight forward design upgrades– Short time to market

independent of control IC

rent switching of 2 channels

Sensors

voltage clamping– 19 ns propagation delay for both control andenableUSB-C controllers
and peripherals

System benefits– Fast Miller plateau transition– Precise timingPowermanagement ICs

Product benefits– 5 A source/sink current– 2 ns channel-to-channel mismatch– 10 ns minimum input pulse width

WBG semiconductors

Key features

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

EiceDRIVER™ 2EDN family: The new reference inruggedness and low power dissipation‒ 4 V and 8 V UVLO (undervoltage lock out) options for instant FETs protection
under abnormal conditions, further improved with active output voltage
clamping‒ -10 V robustness of control and enable inputs provides crucial safety marginwhen driving pulse transformers or driving FETs in various packages‒ 5 A reverse output current robustness eliminates the need for Schottky
switching diodes and reduces bill-of-material‒ Cool driver ICs from true rail-to-rail low impedance output stages

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218

200 V 1-ch gate drivers with truly differential input (TDI)

The 1EDN71x6G/U is a 1-channel gate driver family optimized for Infineon CoolGaN™ Schottky-gate (SG) HEMTs, and also
compatible with other GaN SG HEMTs and silicon MOSFETs. The TDI feature eliminates the risk of false triggering due
to ground bounce in low-side applications and enable 1EDN71x6G/U to address even high-side applications. The TDIfeature works by controlling the gate driver output state exclusively by the voltage difference between the two inputs,
completely independent of the driver’s reference (ground) potential as long as the common-mode voltage is below
150 V (static) and 200 V (dynamic).
Application schematics

Gate-driver ICs

Cvoff_Q1
VIN

Cf_Q2
U2

47 kΩ

3

OUT_SRCOUT_SNKIN+

5
Rin2_Q1
47 kΩ

VOFF

CF+
VOFF_ADJ

4
SGND

CF-

IN-

BST
VDD

10
9

D

Rgon_Q1GQ1High side

8
S

7

Dboot

6

Digital isolators

LI

100 nF 1
2

VSS

Rin_Q1

1EDN71X6G
Cboot

Radj_Q1

500-950 V MOSFETs

EiceDRIVER™ 1EDN71x6G/U family

15-300 V MOSFETs

Applications

Solutions

EiceDRIVER™ highlight products

VphaseIGBT discretes andsilicon power diodes

Cvoff_Q2
Cf_Q2
U2

3
4

SGND

OUT_SRC

VOFF_ADJOUT_SNKIN+

5
Rin2_Q2
47 kΩ

VOFF

CF+

IN-

BST
VDD

10
9

D

Rgon_Q2
GQ2
Low side

8S

76Intelligent powerswitches and modules

LI

47 kΩ

CF-

VSS

Rin_Q2100 nF 1
2

VDR

1EDN71X6G

Cvdd
Radj_Q2

PGND

Product features

Product benefits– Truly differential logic input (TDI)– Four driving strengths– Active Miller clamp– Optional negative charge pump
– Active bootstrap capacitor– Prevent induced turn-on– Additional induced turn-on immunity– No overcharging the bootstrap capacitor during deadtime

Microcontrollers

Features and benefits

USB-C controllers
and peripherals– High-side driving and low-side ground bounce immunity– Optimize switching speed without external gate resistors

Ourput current

Source/sink resistance Input pulse blanking time

Package

2A

0.8 Ω

20 ns

VSON-10

1EDN7126G

1.5 A

1.0 Ω

40 ns

VSON-10

1EDN7136G

1A

1.5 Ω

60 ns

VSON-10

1EDN7146G

0.5 A

3.0 Ω

80 ns

VSON-10

1EDN7116U*

2A

0.8 Ω

20 ns

TSNP-7

1EDN7126U*

1.5 A

1.0 Ω

40 ns

TSNP-7

1EDN7136U*

1A

1.5 Ω

60 ns

TSNP-7

1EDN7146U*

0.5 A

3.0 Ω

80 ns

TSNP-7
Sensors

1EDN7116GWBG semiconductors

ProductPowermanagement ICs

Product family

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219

Digital isolators

1EDL8011 features include OCP protection, the adjustable current setting threshold, time delay as well as a safe start-up
mechanism with flexible blanking during MOSFET turn-on transition. Input voltage under-voltage lockout (UVLO) avoids
operation under hazardous conditions and ensures the right level of gate voltage to fully enhance the MOSFET.

IGBT discretes andsilicon power diodes

The 1EDL8011 gate driver addresses two main use cases in battery operated systems:‒ In-rush current control: allows controlled turn-on of the disconnect switch by using an external Rg combined with asafe start-up and blanking mechanism.
‒ Short circuit protection: whenever a short occurs at the load side, it allows disconnecting the load from the sourceby quickly turning off the disconnect switch. This is made possible by the strong pull-down inside the 1EDL8011,
therefore protecting the whole system.

Intelligent powerswitches and modules

CFLY

CFP

1EDL8011
VIN

Charge
pump

VBAT

CIN

3.3 V/5 V

Control
logic

IN

R1

Microcontrollers

VCP

VIN_UVLO
VGS_SAFE_OFF

Disconnect switch

VCP

R2

15-300 V MOSFETs

Infineon’s upcoming EiceDRIVER™ 1EDL8011 high-side gate driver provides a simple and highly robust solution todrive a disconnect switch to protect battery operated systems during potential short conditions. 1EDL8011 enables
fast turn on/off control of high side N-channel MOSFETs due to the powerful internal gate sourcing and sinking current
capabilities. It consists of an integrated charge pump with an external capacitor to provide support for strong start-up
and turn-off and scalable FETs in parallel application scenarios. The internal charge pump provides proper MOSFET gate
voltage during low operating input voltage conditions. High-side protection avoids faulty shorting conditions in the load
and the dangerous presence of in-rush currents for battery-powered applications.

500-950 V MOSFETs

Integrated high-side driver with strong gate drive and integrated charge pumpGate-driver ICs

EiceDRIVER™ 1EDL8011, 135 V high-side driver

Applications

Solutions

EiceDRIVER™ highlight products

Rg

GATE

VGS_THILIMIT

C1

VIN

COS

NCH

InverterVS
R3

USB-C controllers
and peripherals

D

CBULK

Power
management ICs

GND

Features and benefits
Product features

Product benefits– Operating voltage: 7 – 135 V– Powerful gate sinking current up to 1 A– Off-mode quiescent current 1 µA

– Efficiency and long battery life

WBG semiconductors– Wide voltage operating range– Fast turn off for proper protection

Product family
1EDL8011*

Package
DSO-8

Voltage [A]Sensors

Product

7 – 135 V

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220EiceDRIVER™ 2EDL8x2x family
120 V, 3/4 A, junction-isolated high- and low-side gate drivers

500-950 V MOSFETs

The 2EDL8x2x is a family of high- and low-side gate driver designed for advanced switching DC-DC converters. The
2EDL802x takes in independent inputs while 2EDL812x takes in differential inputs with both having built-in hysteresis forenhanced noise immunity. The gate-driver family comes in two packages: VDSON-8 4x4 mm and VSON-10 3x3 mm.

15-300 V MOSFETs

Applications

Solutions

EiceDRIVER™ highlight products

2EDL8xx

2EDL8xx

2EDL8xx

Product features

Product benefits– 120 V integrated boot-strap diode with 10 ns reverse recovery time
– 2 to 4 A output source currents– 6 A output sink currents– -8 V/+ 15 V differential input robustness– 5 A reverse current output robustness– ±1 ns (typ.) channel-to-channel delay matching– Immunity against false triggering from ground bounce– No need for Schottky clamping diodes

Intelligent powerswitches and modules

Features and benefits

Microcontrollers– Drive strength for fast Miller plateau transition– Fast and robust

2EDL8123G

Input
Differential

2EDL8124G
2EDL8023G

Min. input pulse
width

Propagation
delay (typ.)Matching delay
(typ)

ESD

3A

Independent

3A

Differential

3A

4A

2EDL8124G3C*
2EDL8023G3C*

Sink current

Package
VDSON-8
4x4 mm4A

2EDL8024G
2EDL8123G3C*

Source current

6A

40 ns

45 ns

2 ns

2 kV

VSON-10 3x3 mm

4A
Independent

2EDL8024G3C*

3A

WBG semiconductors

Part nu

USB-C controllers
and peripherals

Product familyPowermanagement ICs

2EDL8xxIGBT discretes andsilicon power diodes

Digital isolators

Gate-driver ICs

Application schematics

4A

Sensors

Evaluation board:
EVAL_HB_2EDL8x2xG*
REF_600W_FBFB_QB*

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221

Solutions

EiceDRIVER™ highlight products

15-300 V MOSFETs

Applications

MOTIX™ 6EDL7141 high performance
motor control
Next-generation fully programmable three-phase gate driver

Gate-driver ICs

500-950 V MOSFETs

6EDL7141, Infineon’s latest three-phase motor control gate-driver IC allows our customers to develop their next
generation of high performance battery operated products using BLDC or PMSM motors. Ideal applications include
cordless power tools, gardening products, and automated guided vehicles. With over 50 fully programmable parameters
using built-in digital SPI interface, 6EDL7141 is fully configurable to drive a wide range of MOSFET’s to yield the best
possible system efficiency. The integrated buck regulator provides the power for both the microcontroller and the Hallsensors in the motor, further reducing peripheral components and required PCB area. In addition, with a full suite ofsystem protection features such as OCP, UVLO, overtemperature, and locked rotor detection, this dedicated motor
controller will increase reliability and robustness in severe operating fault conditions.

Digital isolators

Block diagram
Three-phase BLDC battery-powered motor control
6EDL7141
Buck converter+ Linear regulator

IGBT discretes andsilicon power diodes

BatteryCore
GD_A
PWM Logic
GD_B

PWM

Microcontroller

SPI

SPI

3-phaseinverter

M

GD_C

MemoryIntelligent powerswitches and modules

PWM

Hall
sensors

Protections

Current measurement

OpAmp

Microcontrollers

Protections notification

Key benefits– Integrated power supply– Programmable slew rate
– Programmable gate drive supply– 3x current shunt amplifier– ADC ref. of 5 V– Complete dedicated motor control protection suite– Reduced external components and PCB area
– Optimized efficiency and EMI– Maximum flexibility to use different inverter FETs
– Highly accurate current sense while saving external components– Higher dynamic range to increase signal resolution– Improve reliability and fault detection

Powermanagement ICs

Key features

USB-C controllers
and peripherals

Features and benefits

EVAL_6EDL7141_TRAP_1SH

Sensors

WBG semiconductors

BC 1 shunt evaluation board
Parallel 40 V OptiMOS™5 PQFN
XMC1404 MCU
On-board programming dongle
Featured module IC: 6EDL7141

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222

Battery

Core
GD_A

SPI

M

GD_C

Memory

SPI

GD_B

Hall
sensors

Protections

Current measurement

USB-C controllers
and peripherals

Protections notification

OpAmp

Product features

Product benefits– Integrated power supplies– Adjustable slew rate
– 3x current shunt amplifier– Complete dedicated motor control protection suite– VDS sensing– Maximum flexibility to use different inverter MOSFET’s– Highly accurate integrated current sense saves external components– Improved reliability and fault detection

Powermanagement ICs

Features and benefits

WBG semiconductors– Reduced external component count and PCB area
– Lower voltage overshoots and EMI reduction

Product family
Product

Package
VQFN 48 7mm x 7mm

Voltage [V]
5.5 – 70 V

DVDD regulator output [V]
5.0 V

Sensors

6EDL7151*

15-300 V MOSFETs
Microcontrollers

PWM

Microcontroller

3-phaseinverter

PWM Logic

PWM

500-950 V MOSFETs
Intelligent powerswitches and modules

6EDL7151
Buck converter+ Linear regulator

Gate-driver ICs

The 6EDL7151 is Infineon’s latest 3-phase gate driver which includes added Vs sensor to allow additional hardware system
protection for battery supplied motor control products. Ideal applications include cordless power tools, gardening
products, and automated guided vehicles. With over 50 programmable parameters using built-in digital SPI interface,
6EDL7151 is fully configurable to drive a wide range of MOSFET’s to yield the best possible system efficiency.
6EDL7151 is also designed for maximum performance. Features include programmable dead time delays for preventing
current shoot through between HS and LS switches in normal operation and separate charge pumps for low and highside gate drivers support 100 percent duty cycle and low voltage supply operation. Supplies for the gate drivers areprogrammable to one of the following levels: 7 V, 10 V, 12 V, or 15 V. Additionally, the slew rate of the driving signal canbe programmed with fine granularity to reduce EMI emissions. An integrated synchronous buck converter provides anefficient supply of current to the rest of the system. The 6EDL7151 also integrates a linear voltage regulator (up to 300
mA), powered by the buck converter to supply the MCU and other sensitive components in the system. 6EDL7151 includes
three current sense amplifiers for accurate current measurements that support bi directional low side current sensing
with programmable gain. RDS(on) sensing is supported through internal connection of the phase nodes to the current sense
amplifiers inputs. Temperature compensation if needed shall be provided by the user application. 6EDL7151 also includes
highly programmable VDS sensors for inverter MOSFET protection. In addition, 6EDL7151 provides numerous protections
features for improving application robustness during adverse conditions like monitoring of power supply voltages as well as
system parameters. The failure behavior, threshold voltages and filter times of the supervisions of the device are adjustable
via SPI. Monitored aspects include inverter currents, gate drive voltages and currents, device temperature, and rotor locked.

Digital isolators

Three-phase motor control gate-driver IC for battery supplied BLDC motor control

IGBT discretes andsilicon power diodes

MOTIX™ 6EDL7151 3-phase smart gate drive controller IC

Applications

Solutions

EiceDRIVER™ highlight products

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223

Applications

Solutions

EiceDRIVER™ highlight products

MOTIX™ 160 V SOI gate-driver family

BJT DR
VCC
CP1
CP2
VREG
HIN 1,2,3
LIN 1,2,3
RFE
ITRIP
ITRIP CONF
CSO GAIN
CSO
STR

2

HIN

VS

9

LIN

3

LIN

HO

8

4

COM

VB

7

5

LO

VCC

6

to loadVSS

HO 1,2,3
VS 1,2,3
LO 1,2,3

COM

V BATT-

VSON-10 3x3 mm

2ED2734S01G*

2/4 A

2ED2738S01G

NEW

2ED2742S01G

NEW

6ED2742S01Q

Configuration
High- and low-side(HS+LS)

Deadtime
None

1/2 A

65 ns
Half-bridge

50 ns

2/4 A
NEW

1/2 A

50 ns
65 ns

4/8 A
VQFN-32 5x5 mm

Propagation delay
50 ns
65 ns

4/8 A

2ED2744S01G*
2ED2748S01G

Output current
1/2 A

65 ns
Three-phase

100 ns

100 ns

2ED772S01G*

VSON-10 3x3 mm

1/2 A

Half-bridge

30 ns

50 ns

2ED2778S01G*

VSON-10 3x3 mm

4/8 A

Half-bridge

30 ns

65 ns

Applications for MOTIX™ 160 V SOI gate driver family

USB-C controllers
and peripherals

PackageNEW

Powermanagement ICs

Product
2ED2732S01G

6ED2742S01Q key features‒ Servo/stepper drives in robotics and factory‒ Integrated power management with charge pump and pre-automation‒ General purpose low-voltage drives‒ Battery-operated small home appliances (SHA)‒ Professional and consumer service robotics‒ Logistics vehicles (e-forklifts, autonomous
warehouse robotics)‒ Commercial and agricultural drones‒ Hand-held battery-operated power tools‒ Garden or outdoor power equipment (OPE) tools‒ e-scooters, e-bikes, and other e-vehicles that do not
require automotive qualification (LSEV)

regulator supports wide input voltage range of 6 to 140 V‒ Integrated overcurrent protection comparator for singleshunt low side operation with programmable+/-5% reference threshold‒ Integrated current sense amplifier with programmable
voltage gain and ability to read output voltage offset
during zero phase current‒ Always positive output voltage offset to reduce need for+/- VREF for downstream ADC in microcontroller.
‒ Integrated, per phase, high-side trickle charge pumps toenable 100% duty cycle operation‒ Integrated, multi-function RFE pin combines FAULT,FAULT Clear, and Enable functionality

Click here to learn more:
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www.infineon.com/gatedriver* Coming soon

Gate-driver ICs
Microcontrollers

HIN

VB 1,2,3

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224

WBG semiconductors

10

Sensors

NC

SupportVSSIntelligent powerswitches and modules

6ED2742S01Q

up to 160 V

IGBT discretes andsilicon power diodes

V BATT+

Simplified application diagram
2ED27xxS01G
1

Digital isolators

MOTIX™ 160 V SOI gate-driver family is designed for the BLDC motor drive applications. The SOI technology enables
integrated bootstrap diodes, which can be used to supply the external high-side bootstrap capacitor. The output
drivers feature a high-pulse current buffer stage designed for minimum driver cross-conduction. MOTIX™ 2ED27xxS01G
family consists of three half-bridge and three high- and low-side 160 V SOI gate drivers. The UVLO protection is on
both VCC and VB pins. Fast propagation delays (50 ns) are suitable for motor drive and power conversion applications in
VSON-10 (3x3 mm) package with exposed ground pad. MOTIX™ 6ED2742S01Q is a 160 V three-phase SOI gate driver,which supports 100 percent duty cycle operation by a trickle charge pump. Protection features include UVLO, OCP withconfigurable threshold, fault, and automatic fault clear. A current sense operational amplifier (CSA) with selectable
gain is integrated between the VSS and COM.

500-950 V MOSFETs

15-300 V MOSFETs

2ED27xxS01G half-bridge and high- and low-side gate-driver family withintegrated bootstrap diode6ED2742S01Q three-phase driver with charge pump, current sense amplifier,
OCP and bootstrap diodeSimplified application diagrams

2ED2184S06J

VCC
HIN

LIN

IN

Up to 650 V

1

VCC

VB 8

2

HIN

HO 7

3

LIN

VS 6

4

COM

LO 5

SD
VSS

1

IN

14

2

SD

VB 13

3

VSS

HO 12

4

DT

VS 11

5

COM

10

6

LO

9

7

VCC

8

RDT

TO
LOAD

VCC

Up to 650 V

TO
LOAD

Power dissipation of Infineon SOIIntelligent powerswitches and modules

120.3°Infineon SOI HS+LS
driverMax. temperature 66.6°

USB-C controllers
and peripherals

Microcontrollers

Standard HS+LS
driverMax. temperature
122.2°

20.4°

Power
management ICs

DC = 300 V; CoolMOS™ P7 in DPAK; 300 kHz switching frequency

Evaluation board

Part number

Output current

Prop. delay

Input logic

Configuration

Package

2ED2101S06F

0.29/0.7 A

90 ns

HIN, LIN

High- and low-side

DSO-8

2ED2103S06F

HIN, LIN

Half-bridge

2ED2104S06F

IN, SD

Half-bridge

2ED2388S06F*

0.29/0.7 A

HIN, LIN

Half-bridge

2ED2110S06M

2.5/2.5 A

HIN, LIN

High- and low-side

DSO-16 WB

2ED2106S06F

0.29/0.7 A

HIN, LIN

High- and low-side

DSO-8

Half-bridge

DSO-8

200/200 ns

2ED21064S06J

HIN, LIN

2ED2108S06F

HIN, LIN

2ED21084S06J

DSO-14

HIN, LIN

DSO-14

IN, SD

DSO-8

2ED21094S06J

IN, SD

DSO-14

2ED21091S06F

IN, DT/SD

2ED2109S06F

2ED2181S06F

740/200 ns

2.5/2.5 A

200/200 ns

2ED21814S06J

HIN, LIN

DSO-8
High- and low-side

DSO-8

Half-bridge

DSO-8

HIN, LIN

www.infineon.com/SOI

DSO-14

2ED2182S06F

HIN, LIN

2ED21824S06J

HIN, LIN

DSO-14

2ED2183S06F

HIN, LIN

DSO-8

2ED21834S06J

HIN, LIN

DSO-14

IN, SD

DSO-8

IN, SD

DSO-14

2ED2184S06F
2ED21844S06J

600/200 ns

SupportProduct family
EiceDRIVER™
fast level-shift SOI

Sensors

WBG semiconductors

EVAL-M1-2ED2106S
EVAL-2ED2101 HB-LLC

EiceDRIVER™
general purpose SOI

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15-300 V MOSFETs
IGBT discretes andsilicon power diodes

2ED2106S06F

500-950 V MOSFETs

EiceDRIVER™ 650 V SOI is a family of high-voltage, high-speed MOSFET and IGBT gate drivers. Based on Infineon’s SOI
technology, this family features an integrated, ultra-fast, low RDS(on) bootstrap diode and offers excellent ruggedness
and noise immunity with tolerance to negative transient voltages of up to -100 V. The absence of parasitic thyristor
structures ensures superior latch up immunity. The level-shift loss is significantly reduced on the EiceDRIVER™ SOI gate
drivers compared to other technologies.

Gate-driver ICs

2ED2101/3/4 and 2ED2110: EiceDRIVER™ fast level-shift SOI family with 90 ns prop delay
2ED2106/8/9 and 2ED2181/2/3/4: EiceDRIVER™ general purpose SOI family

Digital isolators

EiceDRIVER™ 650 V level-shift SOI gate driver family

Applications

Solutions

EiceDRIVER™ highlight products

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www.infineon.com/gdfinder225EiceDRIVER™ 1200 V level-shift SOI gate driver family

15-300 V MOSFETs

6ED223x: 1200 V three-phase SOI driver with OCP, bootstrap diode
2ED132x: 1200 V half-bridge and high- and low-side SOI driver with OCP,
Miller clamp and bootstrap diode

DSO-8

DSO-8

DSO-8

SOT-23

+

SOT-23

SOT-23

DSO-8‒ Space savings‒ Cost savings‒ Easy to design‒ Higher reliability‒ Faster time to market

Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes

DSO-24Microcontrollers

DSO-8

6ED2231S12T easily fits within
EasyPIMTM 1B module footprint

Intelligent powerswitches and modules

New 6ED2231S12T
Integrates 6x gate-driverfunctionality and3x boot-strap diodes
Over-current protection
IGBT/SiC MOSFET UVLOs

500-950 V MOSFETs

The 6ED2231S12T is a 1200-V three-phase SOI gate driver, with 0.35 A/0.65 A current
in DSO-24 package (DSO-28 with 4 pins removed). The 2ED132x family consists offour 1200 V SOI gate drivers, in half-bridge or high- and low-side configurations.
2ED132x family offers 2.3 A output current in high creepage (8 mm)/clearance
DSO-20 wide body package or higher sink option (4.6 A) in DSO-16 wide body
package. Both 6ED2231S12T and the 2ED132x family integrates ultra-fastover-current protection (OCP) with ± 5% accuracy, and bootstrap diode.
In addition, the 2ED132x family also integrates active Miller clamp.
Current solutions
6 x opto-isolated drivers +3 x 1200 V bootstrap diodes

EVAL-M1-6ED2231-B1

DSO-8

Customer value– Increased robustness and reliability resulting in– Increased profitability from lower lifecycle costs– Faster time-to-market for higher share capture– Enables new applications– Increased flexibility– Increased reliability– Reduced power dissipation, lower temperature– Faster frequency switching– Smaller PCB footprints– Reduced BOM costs– Improved noise sensitivity– Latch-up immunity
Package

Output current

Key features

Deadtime

TON/TOFF

6ED2231S12T

NEW Three-phase

DSO-24 (DSO-28 with 4 pins removed) 0.35/0.65 A

OCP, RFE

460 ns700/650 ns

2ED1324S12P

NEW Half-bridge

DSO-20WB (20 fine pitch leads)

2.3/2.3 A

OCP, SOFF, AMC, RFE

380 ns

500 ns2ED1323S12P

NEW HS+LS

DSO-20WB (20 fine pitch leads)

2.3/2.3 A

OCP, SOFF, AMC, RFE

None

350 ns2ED1322S12M

NEW Half-bridge

DSO-16WB (300mil)

2.3/4.6 A

OCP, SOFF, RFE

400 ns

500 ns2ED1321S12M

NEW HS+LS

DSO-16WB (300mil)

2.3/4.6 A

OCP, SOFF, RFE

None

350 nsSensors

Configuration

reduced manufacturing and field failures

Power
management ICs

Key benefits– Leading negative VS immunity– > 50% lower level-shift switching losses– Integrated bootstrap diode– 1200 V breakdown voltage– Integrated input filters

WBG semiconductors

Key features

USB-C controllers
and peripherals

Features and benefits

Product Name

Applications

Solutions

EiceDRIVER™ highlight products

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226

Fast, robust, dual-channel galvanic isolated gate-river ICs

Gate-driver ICs

Galvanic isolated EiceDRIVER™ family overview
The 2EDi is a family of dual-channel isolated gate driver ICs designed to drive Si MOSFETS, SiC MOSFETs and GaN
power switches. Isolation is achieved by means of Infineon‘s coreless transformer (CT) technology which guarantees
robust operation and industry benchmark common-mode rejection (CMTI). The high propagation delay accuracy and low
channel-to-channel mismatch makes the product ideal for use in fast-switching power system. In addition, high CMTI, highreverse current capability and fast clamping of the output below UVLO guarantees reliable operation in the application.

IGBT discretes andsilicon power diodes

Digital isolators

2EDi Gen 2: What is new?
‒ New DSO8 4x4 package‒ DSO-14 packages with increased channel-to-channel creepage to easier the layout or
enable the use with higher working voltages or worst pollution layout‒ Fulfills the latest component standard for magnetic couplers (IEC 60747-17)‒ Programmable dead-time and shoot-through functionality

Intelligent powerswitches and modules‒ LED lighting‒ Home appliances air conditioner‒ Motor driver‒ Battery charger‒ EV chargers‒ OBC-DCDC‒ Microinverters

Microcontrollers

Applications‒ Server‒ Telecom‒ DC-DC converters‒ Power tools‒ Industrial SMPS
‒ Low speed electrical vehicles‒ Solar power inverter

Features and benefits
Key features

Key benefits

Customer value– Fast power switching with accurate timing– 5 A/9 A source/sink currents– Propagation delay typ. 38 ns with 6 ns

– Efficiency gain and lower losses– Strong driving enables reduced switching losses– Accurate timing enables deadtime optimiza-– Enabling higher system efficiency and higher– Optimized for area and system BOM– < 1 Ω source and sink output resistance– Output stages with 5 A reverse current capability– Improved thermal behavior at smaller form factor– Most of the driving power is dissipated externally– Improving long term competitive cost position,– Robust– CMTI >150 V/ns
– Under voltage lockout function for switch protection– Deadtime control and shoot through protection– Protection and safe operation– Reliable driver operation against fast switching– Extending end-product lifetime– by improving safe operation of power switches intransients– MOSFET is protected from thermal stress in ab-

integration and mass manufacturability

normal and abnormal field (grid) conditions

normal conditions– Output-to-output channel isolation– Functional level galvanic isolation– Protection against noise and spurious pulses– Flexible configurations– High-side + low-side, high-side + high-side, low-

– Lower EMI by ground isolation– Input-to-output channel isolation– Functional, basic and reinforced galvanic iso-

– Regulatory safety– Functional for level-shifting and ground bounce– Simplified safety approval– through component standards (UL1577, IEC60747-

lationUSB-C controllers
and peripherals

with reduced thermal stress on the driver– Eliminates two costly protection diodes on thegate driver outputs

Powermanagement ICs

tion or synchronized driving in case of parallel
MOSFETspower density designs

side + low-side

immunity– Reinforced for control of primary-side MOSFETs

WBG semiconductors

channel-to-channel precision

500-950 V MOSFETs

2EDi EiceDRIVER™ family

15-300 V MOSFETs

Applications

Solutions

EiceDRIVER™ highlight products17) and system standards (IEC62368) certificatesSensors

from secondary-side controller

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EiceDRIVER™ X3 Compact and 2L-SRC Compact

15-300 V MOSFETs

5.7 kV, 18 A, 1-ch, isolated drivers with Miller clamp and two-level slew rate control

+5 V

+15 V

VCC2

Select Rg

/INF

IN

IN

GND1

GND1

OUT

SGND
RGF

OUTF
VEE2

VCC1
100n

RG

1μ

GND1

IN
–8 V

Gate-driver ICs

10R
OUT+
CLAMP

IN+

VCC2

IN-

GND2

+15 V
1μ

Intelligent powerswitches and modules

VCC1
100n

Digital isolators+5 V

IGBT discretes andsilicon power diodes

Active Miller clamp (1ED3122MC12H)

500-950 V MOSFETs

The EiceDRIVER™ X3 Compact family (1ED31xx) provides Miller clamp or separate output options with up to 14 A
current, in DSO-8 150 mil and 300 mil package. The EiceDRIVER™ 2L-SRC Compact family (1ED32xx) provides Miller
clamp or 2-level slew rate control options with up to 18 A current, in DSO-8 300 mil package. The Miller clamp function
is highly recommended for SiC MOSFET 0 V turn off and TRENCHSTOP™ IGBT7 against parasitic turn on. The twolevel slew rate control function allows customers to change the output current on the fly. It is highly recommend forindustrial drives application, where customer suffer from the EMI and switching loss optimization. Both EiceDRIVER™
X3 Compact and 2L-SRC Compact families are rated up to 2300 V functional isolation and 200 kV/µs CMTI. They are
ideal for IGBTs, Si MOSFETs, and SiC MOSFETs in applications like solar inverter, EV-charging, industrial drives, CAC,
industrial induction cooking, CAV, UPS, server and telecom SMPS, etc.

Simplified application diagram
Two-level slew rate control (1ED3241MC12H)

Evaluation board

10 A
10 A
6.5 A
6.5 A
6.5 A
14 A
6.5 A
6.5 A
6.5 A
6.5 A
6.5 A
10 A
14 A
14 A
10 A
18 A
10 A
18 A

Microcontrollers

Prop.
delay

Input filter

Miller clamp

90 ns

30 ns

Separate output

45 ns

15 ns

UVLO2 refers GND2

90 ns
45 ns
45 ns
45 ns
45 ns
45 ns
90 ns

30 ns
15 ns
15 ns
15 ns
15 ns
15 ns
30 ns

Turn-on and turn-off slew 110 ns
rate control

30 ns

FeatureUVLO2 adjustable
Miller clamp
Separate output

Turn-on slew rate control
and Miller clamp

UVLO

Prop.delay
matching

12 V
7 ns
10.5 V
8.5 V
11 V
12.5 V
10.5 V
11 V
12.5 V
11 V
12.5 V
Adjustable
8V
8V
10.5 V
10.5 V
15 ns
10.5 V
10.5 V
10.5 V

Package

Isolation rating

DSO-8 150mil

UL 1577:
VISO = 3 kVRMS

DSO-8 300mil

UL 1577:
VISO = 5.7 kVrms
IEC 60747-17
VIORM = 1.767 kVrms
UL 1577:
VISO = 5.7 kVRMS
VDE 0884-11:
VIORM = 1767 V(reinforced)

Sensors

EiceDRIVER™
2L-SRC
Compact

1ED3127MU12F
1ED3125MU12F
1ED3140MU12F
1ED3141MU12F
1ED3142MU12F
1ED3124MU12F
1ED3141MC12H*
1ED3142MC12H*
1ED3143MC12H*
1ED3144MC12H*
1ED3145MC12H*
1ED3122MC12H
1ED3123MC12H
1ED3124MC12H
1ED3240MC12H
1ED3241MC12H
1ED3250MC12H
1ED3251MC12H

Typ. output
current

USB-C controllers
and peripherals

EiceDRIVER™
X3 Compact

Part numberPowermanagement ICs

FamilyEVAL-1ED3241MC12H
EVAL-1ED3251MC12H
REF-22K-GPD-INV-EASY3B

WBG semiconductors

EVAL-1ED3121MX12H
EVAL-1ED3122MX12H
EVAL-1ED3124MX12H

Applications

Solutions

EiceDRIVER™ highlight products

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EiceDRIVER™ X3 Compact Gen 2 product family

DSO-8 300 mil package

USB-C controllers
and peripherals

DSO-8 150 mil package

150 mil product family

DSO-8, 150 mil

CTI
400

Typical UVLO2
CLR / CPG

4 mm / 4 mm

(VUVLOL2 / VUVLOH2)

8.5 V / 9.3 V

1ED3141MU12F

11.0 V / 12.0 V

1ED3142MU12F

12.5 V / 13.6 V

UVLO Ref.

Output TypeVEE2

Separate

Certification
UL 1577

Isolation Voltage
VISO = 3000 V (rms)Powermanagement ICs

1ED3140MU12F

Package Information
Type

300 mil product family

1ED3141MC12H

Package Information
Type
DSO-8, 300 mil

CTI
600

Typical UVLO2
CLR / CPG

8 mm / 8 mm

(VUVLOL2 / VUVLOH2)UVLO Ref.

Output Type11.0 V / 12.0 V

VEE2Separate

1ED3142MC12H

12.5 V / 13.6 V

VEE2

Separate

1ED3143MC12H

11.0 V / 12.0 V

GND2Combined

1ED3144MC12H

12.5 V / 13.6 V

GND2

Combined

1ED3145MC12H

Adjustable

VCC2

Combined

Certification

Isolation Voltage

UL 1577 (pending)
VISO = 5700 V (rms)
IEC 60747-17 (planned) VIORM = 1767 V (pk)Sensors

Product NameWBG semiconductors– 35 V absolute maximum output supply voltage– 6.5 A peak output driving current– Very short propagation delay (40 ns) and part-to-part tolerance (7 ns)– UVLO options for Si MOSFETs, IGBTs, and SiC MOSFETs– Active shutdown– 150 mil and 300 mil DSO 8-pin standard packages– Certified according to UL 1577 and IEC 60747-17 (planned) standards

Microcontrollers

Product features

Product Name

Gate-driver ICs
Intelligent powerswitches and modules

Features

Digital isolators

The EiceDRIVER™ Compact 1ED314x products are high-performance single-channel galvanically isolated gate driver
ICs. This family is available in either a 150 mil DSO-8 package with 4 mm creepage and clearance or in a 300 mil DSO-8
package with 8 mm creepage and clearance suitable for most industrial applications. The creepage and clearance offeredby these packages meet the requirements for fulfilling the functional or reinforced isolation in applications. The excellent
part-to-part propagation delay matching of only 7 ns reduces the required deadtime during switching and the strong
output stage provides driving currents up to 6.5 A. These features enable high-efficiency power conversion when using
IGBTs or SiC MOSFETs in high switching frequency applications. The best-in-class common mode transient immunity(CMTI) rating of 300 kV/µs ensures smooth operation of the gate driver and the system even under very fast switchingconditions. The high absolute maximum rating of the output supply voltage enables the straightforward driving of SiC
MOSFET and IGBT with both unipolar and bipolar voltage configurations. Undervoltage Lockout (UVLO) options in the
1ED314x family cater to the driving voltage requirements of silicon MOSFETs, IGBTs, and SiC MOSFETs. The isolation
capabilities of the gate drivers are planned to be certified under both UL 1577 and IEC 60747-17. The 1ED314x productfamily is an excellent choice for applications such as electric vehicle charging station, solar inverter, energy storage
system, uninterruptible power supply, high voltage air-conditioner, switched-mode power supply, and industrial drives.

IGBT discretes andsilicon power diodes

1ED3140MU12F, 1ED3141MU12F, 1ED3142MU12F, 1ED3141MC12H
1ED3142MC12H, 1ED3143MC12H, 1ED3144MC12H, 1ED3145MC12H

500-950 V MOSFETs

15-300 V MOSFETs

Single channel isolated gate driver for functional or reinforced isolation

Applications

Solutions

EiceDRIVER™ highlight products

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Applications

Solutions

EiceDRIVER™ highlight products

Typical Application Schematic

OUTH

IN+

OUTL

IN–

VEE2

2R2
1R2

+5 V

VCC1

SGND
IN

+15 V

OUT

IN+

GND2

IN–

VEE2

IN
0V

IN+

ADJ

IN–

VEE2

IN–

VEE2

1R2
4µ7
-3 V

VCC1

VCC2

GND1

OUT

IN+

GND2

IN–

VEE2

100n

+15 V
4µ7
2R2

4µ7

-3 V

Combined output for bipolar driving,UVLO2 adjustable
+15 V
4µ7
100n

+5 V

VCC1

VCC2

GND1

OUT

IN+

ADJ

IN–

VEE2

100n
SGND

2R2
6.8k

IN

0V

+18 V
4µ7
100n
2R2
0V
4µ7

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers-3 V

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IN

OUTL

6.8k

GND1

OUT

100n
SGND

IN+

100n

1k

VCC2

+5 V

2R2

1k

VCC1

IN

SGND

Combined output for unipolar driving,UVLO2 adjustable
+5 V

OUTH

100n

100n 4µ7
GND1

GND1

+15 V
4µ7
2R2

Combined output for bipolar driving,UVLO2 referred to GND2

VCC2

100n

SGND

0V

Combined output for unipolar driving,UVLO2 referred to GND2

VCC2Gate-driver ICs

IN

GND1

VCC1
100n

Digital isolators

SGND

+5 V

15-300 V MOSFETs

+15 V

VCC2

IGBT discretes andsilicon power diodes

VCC1
100n

Intelligent powerswitches and modules+5 V

Separate output for bipolar driving,UVLO2 referred to VEE2

500-950 V MOSFETs

Separate output for unipolar driving,UVLO2 referred to VEE2

230

EiceDRIVER™ X3 Compact 2ED314xMC12H
Dual channel isolated gate driver with reinforced isolation

500-950 V MOSFETs

2ED3140MC12L, 2ED3141MC12L, 2ED3142MC12L, 2ED3143MC12L, 2ED3144MC12L,
2ED3145MC12L, 2ED3146MC12L, 2ED3147MC12L

IGBT discretes andsilicon power diodes

Digital isolators

Gate-driver ICs

The EiceDRIVER™ Compact 2ED314x products are high-performance dual-channel galvanically isolated gate driver
ICs. The 300 mil DSO-14 package offers an input-to-output creepage and clearance of 8 mm and an output channel-tochannel distance of 3.3 mm. The reinforced isolation between input and output and the functional isolation between the
outputs meet the requirements of most industrial applications. With only a 39 ns propagation delay and 8 ns channel-tochannel mismatch, the gate drivers support all high frequency switching applications. The 6.5 A output current allows
using these ICs with many IGBT and SiC MOSFETs in discrete and power module packages. The dead-time control pin(DT) enables the dual-channel or the half-bridge mode. In half-bridge mode, the gate driver implements a shoot-throughprotection with configurable dead-time. The established coreless transformer isolation technology offers high common
mode transient immunity (CMTI) for robust signal transmission in high dV/dt application conditions. The maximum
output supply rating of 35 V is optimized to drive SiC MOSFET and IGBT with unipolar or bipolar gate voltages. The
2ED314x has UVLO options for Si MOSFETs, IGBTs, and SiC MOSFETs. The products are planned with UL 1577 and IEC
60747-17 certification to support a broad range of applications, such as electric vehicle charge station, solar inverter,
energy storage system, uninterruptible power supply, high voltage air-conditioner, and switched-mode power supply.

Intelligent powerswitches and modules

Features
Product features

Product family

DSO-14, 300 mil

CTI
400

Typical UVLO2
CLR / CPG

8 mm / 8 mm

(VUVLOL2 / VUVLOH2)UVLO Ref.

3.3 mm / 3.3 mm 8.5 V / 9.3 V

Output TypeDIS

2ED3141MC12L

11.0 V / 12.0 V DIS

2ED3142MC12L

12.5 V / 13.6 V DIS

2ED3143MC12L

14.7 V / 16.0 V DIS

2ED3144MC12L

8.5 V / 9.3 V

2ED3145MC12L

11.0 V / 12.0 V EN

2ED3146MC12L

12.5 V / 13.6 V EN

2ED3147MC12L

14.7 V / 16.0 V EN

Certification
UL 1577 (pending)
IEC 60747-17(planned)

Isolation Voltage
VISO = 5700 V (rms)
VIORM = 1767 V (pk)

WBG semiconductors

2ED3140MC12L

Package Information
Type

Power
management ICs

USB-C controllers
and peripherals

Microcontrollers– 35 V absolute maximum output supply voltage– 6.5 A peak output driving current– Short propagation delay (39 ns) and part-to-part tolerance (8 ns)– UVLO options for Si MOSFETs, IGBTs, and SiC MOSFETs– Active shutdown– Output enable or disable logic control pin– Selectable dual-channel (non-interlocked) or half-bridge (interlocked) mode
– Shoot-through protection with configurable dead time in half-bridge mode
– 300 mil DSO-14 package– UL1577 (pending) and IEC 60747-17 certified (planned)

Product Name

15-300 V MOSFETs

Applications

Solutions

EiceDRIVER™ highlight products

Sensors

EN

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Applications

Solutions

EiceDRIVER™ highlight products

Half-Bridge, Full Isolation Configuration of Input, Output, and Ch-to-Ch with
Bipolar Bias Supply Driving
VCC2A
VCC2A

INB

OUT2A

C(VCC2A)
Doff(A)

Rg,off(A)15-300 V MOSFETs

INA

Q1

Rg,on(A)

VCC1

VCC1

VEE2A

(VEE2A)GND1Disable or enable

R(DT)

GND1

VEE2A

DIS/EN

VCC2B

DT

VCC2B

C(VCC2B)

Doff(B)

Rg,off(B)

GND1

Q2

OUT2B
VCC1

VEE2B

500-950 V MOSFETs

C(VCC1)

Rg,on(B)(VEE2B)

Gate-driver ICs

VEE2B

VCC2A

INB

OUT2A

C(VCC2A)
Doff(A)

Rg,off(A)
Q1

IGBT discretes andsilicon power diodes

INA

Digital isolators

Half-Bridge, Isolation Configuration of Input and Output only, Ch-to-Ch with
Unipolar Bootstrap Bias Supply Driving

Rg,on(A)

VCC1

VEE2A

C(VCC1)

D(Boot)GND1
GND1
Disable or enable

DIS/EN

R(DT)

DT

VDD
VCC2B

R(Boot)C(VCC2B)
Doff(B)

Rg,off(B)

GND1

Q2

OUT2B
VCC1

Intelligent powerswitches and modules

VCC1

Rg,on(B)

VEE2B

Microcontrollers

VSS

D(Boot)

INA

VCC2A

INB

OUT2A

C(VCC2A)
Doff(A)

Rg,off(A)Q1

Powermanagement ICs

R(Boot)USB-C controllers
and peripherals

Half-Bridge, Non-isolation Configuration of Input, Output, and Ch-to-Ch with
Unipolar Bootstrap Bias Supply Driving

Rg,on(A)

VDD

VCC1

VEE2A

C(VCC1)GND1VSSDisable or enable

R(DT)

DT

VCC2B

C(VCC2B)
Doff(B)

Rg,off(B)

VSS

Q2

OUT2B
VCC1

WBG semiconductors

DIS/EN

Rg,on(B)

VEE2B

Sensors

VSS

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Solutions

EiceDRIVER™ highlight products

Applications

EiceDRIVER™ Enhanced 1ED-F3 and X3 Analog

15-300 V MOSFETs

5.7 kV, 9 A, 1-ch, isolated drivers with DESAT, Miller clamp and soft-off

100n

1μ

IN+
IN-

RDY

RDY

FLT

CLAMP

10R

NC

220p

IN

IN

RDYC

RDYC

ON

1k

1R

SGND

1R

IN

OFF

RDYC
CLAMP

FLT_N

FLT_N

GND2

ADJA
ADJB

VEE2

GND2

SCL
SDA

VEE2

Evaluation board

Miller clamp, DESAT,soft-off

Prop.
delay

Input
filter

80 ns

35 ns

1ED3320MC12N

3/6 A

1ED3321MC12N

6/8.5 A

1ED3322MC12N

6/8.5 A

1ED3323MC12N

6/8.5 A

1ED3431MC12M

3A

Miller clamp, resistor adjus- 236 ns
table DESAT and soft-off

1ED3461MC12M

6A

Clamp driver, resistor adjustable DESAT and soft-off

1ED3491MC12M

9A

UVLO
10.5 V

Prop.delay
matching
15 ns

Package
DSO-16 300mil

10.5 V
Miller clamp, DESAT

Isolation rating
UL 1577:
VISO = 5.7 kVRMS

Powermanagement ICs

FeatureVDE 0884-11:
VIORM = 1767 V(reinforced)

12 V
10.5 V
100 ns10.5 V

30 ns

DSO-16 300mil
fine pitch

10.5 V
10.5 V

Sensors

EiceDRIVER™
Enhanced
X3 Analog

Typ. output
current

WBG semiconductors

EiceDRIVER™
Enhanced
1ED-F3

Part number

USB-C controllers
and peripherals

EVAL-1ED3321MC12N
EVAL-1ED3491MX12M

FamilyGate-driver ICs+3V3

Microcontrollers/RST

Digital isolators

DESAT

/FLT

RST

1μ
GND1

FLT_N

+15 V

VCC2

100n

SGND

OUT

Analog

VCC1

1k

DESAT
GND1

IN

+3V3

10k

SGND

+15 V

VCC2

10k

10k

10k

VCC1

10k

+5 V

IGBT discretes andsilicon power diodes

X3 Analog (1ED34xx)

1ED020I12-F2Intelligent powerswitches and modules

Simplified application diagram
1ED-F3 (1ED332x)

500-950 V MOSFETs

The EiceDRIVER™ Enhanced 1ED-F3 family (1ED332x) provides DESAT, Miller clamp and soft-off features with up to 6
A current, in DSO-16 300 mil package. The EiceDRIVER™ Enhanced X3 Analog family (1ED34xx) provides Miller clamp,
resistor configurable DESAT and soft-off function with up to 9 A current, in DSO-16 300 mil fine pitch package. The
1ED-F3 family (1ED332x) is pin-to-pin with our previous generation 1ED020I12-F2 (1ED-F2), with higher current, shorter
propagation delay, higher isolation ratings, and additional soft-off function. The X3 Analog family (1ED34xx) offers bestin-class DESAT protection accuracy with the resistor configurability on DESAT filter and leading edge blanking time andsoft-off current. Both EiceDRIVER™ Enhanced 1ED-F3 and X3 Analog families are rated up to 2300 V functional isolationand 200 kV/µs CMTI. They are ideal for IGBTs, Si MOSFETs, and SiC in applications like solar inverter, EV-charging,industrial drives, CAC, industrial induction cooking, CAV, UPS, server and telecom SMPS, etc.

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Solutions

EiceDRIVER™ highlight products

SupplyTemp

Powerswitch

I2C

ADC

PWM

Driver stage
Gate Driver Configuration

+3V3

1μ
DESAT
GND1

IN

IN

RDYC

RDYC

FLT_N

+15 V

VCC2

ON

1R
1R

OFF

SDA

1ED3830MC12M

3A

1ED3860MC12M

6A

GND2

1ED3890MC12M

9A

FeatureIsolation rating

I2C configurabili- UL 1577:
ty, Miller clamp, VISO = 5.7 kVRMS
DESAT, soft-off,
two-level turn- VDE 0884-11:
off, integrated
VIORM = 1767 V
ADC(reinforced)

500-950 V MOSFETs

VEE2
Sensors

SCL

SDA

EiceDRIVER™
Enhanced
X3 Digital

CLAMP

FLT_N

SCL

1k

Part Number

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SGND

10k

10k

VCC1
100n

Typ.
outputcurrent

FamilyPowermanagement ICs

Simplified application diagram
X3 Digital (1ED38xx)

X3 Digital approach
Adjust the driver digitally

WBG semiconductors

Traditional approach
Constant re-soldering

USB-C controllers
and peripherals

Evaluation board
EVAL-1ED3890Mx12M
EVAL-1ED38x0DCT

DigitalGate-driver ICs
Microcontrollers

HMI
[uC]

Rapid prototyping
The I2C interface enables rapid prototyping without
hardware changes. Using a traditional gate driver,customers have to first design an initial PCB board, andthen adjust and replace the components on the board
during evaluation. However, with the 1ED38xx I2C interface,customers can configure up to 27 parameters to optimize
the board without replacing the components. This feature
extremely shortens the development flow.

Intelligent powerswitches and modules

Predictive maintenanceUsing the I2C interface, the 1ED38xx is able to register thecounts of UVLO spikes, monitor the supply voltage andtemperature increase. With the long-term analysis of thecollected data, customers are able to decide when is thebest time to schedule a maintenance cycle before thesystem fails.

Digital isolators

The EiceDRIVER™ Enhanced X3 Digital family (1ED38xx) provides I2C configurability for DESAT, soft-off, UVLO, Miller clamp,
two-level turn off (TLTO), and fault function to simplify the design of highly reliable systems. All adjustments are done fromthe input side via the I2C interface (pin SDA and SCL). The 1ED38xx offers up to 9 A current, in DSO-16 300 mil fine-pitch
package. The EiceDRIVER™ Enhanced X3 Digital family is rated up to 2300 V functional isolation and 200 kV/µs CMTI. They
are ideal for IGBTs, Si MOSFETs, and SiC MOSFETs especially due to the configurability of DESAT and UVLO. This family isrecommended in applications like solar inverter, EV-charging, industrial drives, CAC, industrial induction cooking, CAV,
UPS, server and telecom SMPS, etc. Two noticeable advantages of the digitally configurable approach for customers are
predictive maintenance in sophisticated industrial systems and rapid prototyping for fast solution development.

IGBT discretes andsilicon power diodes

5.7 kV, 9 A, 1-ch, isolated drivers with I2C configurability for DESAT,
Miller clamp, soft-off and many more

15-300 V MOSFETs

Applications

EiceDRIVER™ Enhanced X3 Digital234

Solutions

EiceDRIVER™ highlight products

Applications

EiceDRIVER™ Full-Bridge Transformer Driver

IGBT discretes andsilicon power diodes

Features
Product features

Microcontrollers

Intelligent powerswitches and modules– Wide input voltage range 4.5 to 20 V
– Wide range of switching frequency from 50 to 695 kHz– Higher accuracy duty cycle adjustment from 10% to 50%– Peak-current controlled soft start– Overcurrent and overtemperature protection– Ready signal to indicate successful completion of soft start– 3x3 mm² TSSOP-8 package with exposed pad

Product Family
Package

Switching frequency

Duty cycle

Bypass mode

Over-current protection

2EP100RTSSOP-8

65 kHz, 103 kHz

33%, 50%

No

Fixed

2EP101RTSSOP-8

50 kHz, 65 kHz

12%, 17%

No

Fixed

2EP110RTSSOP-8

50 kHz, 65 kHz

10% to 50%

No

Fixed

2EP130RTSSOP-8

50 kHz to 695 kHz

10% to 50%

Yes

Adjustable

USB-C controllers
and peripherals

Product name15 V
1.25:1

RDY

DC
OCSET

+15 V

OUT2
OUT1
GND

WBG semiconductors

FREQ/BYP

Power
management ICs

Application schematic
VCC

Gate-driver ICs

The 2EP is a full-bridge transformer driver to enable customers to build an isolated gate driver power supply. The
highly integrated and resistor configurable 2EP reduces the external component count. The open-loop controller drives
the integrated full-bridge power MOSFETs and is therefore also able to offer various protection features. These features
include overcurrent protection, thermal shutdown, and a ready signal. The adjustable duty cycle and switchingfrequency allow customers to customize the operation to the gate voltage requirements of various power switches
like IGBT and SiC MOSFETs. The EiceDRIVER™ Power 2EP products come in a small TSSOP-8 package with an exposed
pad for optimized thermal behavior. The small footprint additionally allows for space saving PCB designs in area
constrained applications. The broad frequency range of up to 695 kHz together with the output power capability of 5
W or more enable isolated gate driver supply designs for a wide range of discrete and power modules. This flexibility
allows the product to be used many applications such as uninterruptible power supply, solar inverter, energy storage
system, electric vehicle charge station, and motor drive inverters.

Digital isolators

2EP100R, 2EP101R, 2EP110R, 2EP130

500-950 V MOSFETs

15-300 V MOSFETs

Isolated power supply for IGBT and SiC MOSFET gate driver supply

GND-7.5 V

Sensors

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The EiceDRIVER™ 2ED4820-EM is a smart high side N-channel MOSFET gate driver with two outputs controlled via
SPI. The integrated powerful charge pump allows external MOSFETs to stay continuously on. Thanks to the enhanced
turn-on and turn-off ability of the driver, the number of MOSFETs could be easily scaled up to manage large currents inthe order of several hundred amps, while ensuring fast switch on and off. The MOSFETs could be controlled in a backto back configuration either common mode or common source. The integrated current sense amplifier supports highside and even load-side current measurement with a dedicated monitoring output. The 2ED4820-EM comes along withseveral latching failure detections, to implement protections for the external MOSFETs, the load and the power source.
Parameters can be adjusted by SPI; monitoring data, configuration, warning and failure detection registers can be read.

5 V or
3.3 V

VBAT

CVCP

CCPHL

CPH

CPL

VCP

Digital isolatorsIntelligent powerswitches and modules

Low
ohmic
path
GA

VDD

Potential applications‒ Battery protection switch‒ Input protection switch‒ Static load and supply switch for high currents

Microcontrollers

CVBAT

Benefits‒ Supports back-to-back MOSFET topologies(common drain or common source)‒ SAFESTATEN input to trigger safe state modein case of µC failure‒ One bidirectional high or low side analog current senseinterface with configurable gain to optimize power losses‒ Robust against Vbat voltages up to 105 V and Vsource
voltages versus Vbat of -90 V

IGBT discretes andsilicon power diodes

Summary of features‒ Extended supply voltage range: 20 - 70 V
‒ Two independent high-side gate driver outputs with
1 A pull down, 0.3 A pull up for fast switch off/on‒ Low supply current in sleep mode IBAT_Q < 5 µA
‒ Device control, configuration and diagnostic via SPI‒ Configurable overcurrent/short circuit protection‒ Configurable Drain-Source overvoltage protection‒ Gate undervoltage lockout (VGS)‒ Ground loss detection‒ AEC-Q100 qualification

RG

CVDD

500-950 V MOSFETs

48 V smart high-side MOSFET gate driver with SPI for automotive applications

Gate-driver ICs

EiceDRIVER™ APD 2ED4820-EM

15-300 V MOSFETs

Applications

Solutions

EiceDRIVER™ highlight products

RGS
SA

Microcontroller

GPIO
GPIO
GPIO
GPIO
GPIO
GPIO
GPIO
ADC

CSN
SCLK
MOSI
MISO
INTERRUPTENABLESAFESTATEN

Capacitor
pre-charge
path

2ED4820-EM

GB

USB-C controllers
and peripherals

48 V
Battery
cells

RProt

RG
RGS

SB

CSO

RFiltCSO
CFiltCSO

Power
management ICs

RPreChRFiltSh
ISN

CFiltSh
ISP

RFiltSh

LOAD(s)
AGND

GND

EP

Freewheel.
diode

CPGND

WBG semiconductors

Shunt

Products and evaluation boards
Description

Ordering code

Package

2ED4820-EM

48 V smart high-side MOSFET gate driver with SPI

SP005629911

PG-TSDSO-24

2ED4820 EB2 2HSV48

2ED4820 dual high-side switch – 48 V evaluation board

SP005353778

BOARD

R 48V BATT Switch10

48 V battery disconnect switch - reference design

SP005595834

BOARD

Sensors

Product

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Applications

Solutions

EiceDRIVER™ highlight products

EiceDRIVER™ 1EDI302x/1EDI303x/1EDI305xAS

15-300 V MOSFETs

1200 V galvanically isolated automotive gate driver IC family

500-950 V MOSFETs

EiceDRIVER™ 1EDI302xAS, 1EDI303xAS and 1EDI305xAS are automotive-qualified single-channel high-voltage gate
drivers optimized for IGBT and SiC technologies. They are galvanically isolated using Infineon coreless transformer (CT)technology. Comprehensive safety features and ISO 26262 compliance enable ASIL-D classification on the system level.
Accompanying safety documents ease and speed-up FMEDA analysis in the application.

Gate-driver ICs

The EiceDRIVER™ 1EDI302x/1EDI303xAS product family offers a compact package design, and its high level of feature
integration save valuable PCB space and system cost, while the pre-configured settings reduce design efforts. Pincompatible product variants make switching between variants easy and swiftly adjusting ECUs to different applicationneeds (i.e., SiC MOSFET vs. IGBT).

Digital isolators

1EDI305xAS offers full configurability via SPI, which enables platform development. The integrated high-accuracy
flyback controller can optimize the supply architecture and reduce conduction losses in power devices.

1EDI302xAS & 1EDI303xAS (x=5,6,8)

Power technology

Fast pins and SPI

Pre-configured variants either for IGBT (302x) or SiC (303x)

SPI to configure for SiC or IGBT

Drive stage strength

20 A

20 A (15 A for 1EDI3028/38)

20 A

TOUT (ext. diode needed to separate Ron andRoff)

Split output (TON and TOFF)

Split output (TON and TOFF)

Yes, internal

Yes, internal and external

DESAT (incl. BIST)

DESAT & OCP (both incl. BIST)

Soft-off pin

Internal soft-off ramp

Active miller clamp

Yes, internal

STP1 and dead timeYes

SC detection

DESAT and OCP

SC reaction

Internal soft-off ramp

Yes, configurable via SPI

ISO 26262-compliant
Safe state pin (ASC)Yes, ASIL B (D)Yes, on secondary side (1EDI3031 & 1EDI3021)

Integrated flyback

Yes, on primary and secondary side

Yes, on primary and secondary side

Yes, 12-bit DS-ADC (except 1EDI3038)

Yes, 12-bit DS-ADC, 2 ext. channels

No
Yes, 12-bit DS-ADC (1EDI3020/3 & 1EDI3030/3)

DSO-20 (10.3 mm x 6.4 mm)

DSO-36 (10.3 mm x 10.3 mm)

Sensors

WBG semiconductors

PackageYes, with 2% accuracy

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SupportADC

Microcontrollers

Reinforced 6.8kV, CMTI >150V/ns
Fast pins and PWM data stream

Interface

Drive stage

1EDI305xAS (x=0,1)

USB-C controllers
and peripherals

Isolation and & CMTIIntelligent powerswitches and modules

1EDI302xAS & 1EDI303xAS (x=0,1,3)

Power
management ICs

Product feature

IGBT discretes andsilicon power diodes

Potential applications‒ Traction inverters for HEV and EV‒ Auxiliary inverters for HEV and EV‒ High-power DC-DC converters

237

Applications

Solutions

EiceDRIVER™ highlight products

Block diagrams
1EDI302xAS & 1EDI303xAS (x = 5, 6, 8)

Primary
power supply

Secondary
power supply

PWM(n) input &shoot throughprotection

INN
NFLT

OCP/DESAT
notification

NRST

Reset

EN

Corelesstransformer

Error notification

DATA

Error diagnosis
ADC read-out

GND1

VCC2

INP

TOUT

Gate clamp &gate monitoring

CLAMP/GATEVEE2Primary
power supply

Secondary
power supply

INN
NFLT

DESAT notification

Corelesstransformer

SI1

Short circuit
protection

OCCP

OCP pin open
detection

OCPN

Safety inputs

Output stage &monitoring

TON
TOFF

Gate clamp &gate monitoring

CLAMP/GATE

Short circuit
protection

DESAT

Soft-off

SOFTOFF

SI2

RDY

Error notification

DATA

Error diagnosis
ADC read-out

AIP/ASC
ADC/ASC

GND2

AIP/ASCInternal
supervision

ADC/ASC
VEE2
Digital isolators

Internal
supervision

GND2
VCC2

PWM(n) input &shoot throughprotection

DESAT

Switching control

RDY

VEE2

Output stage &monitoring

Secondary side

VCC1

15-300 V MOSFETs

INP

GND2

500-950 V MOSFETs

VCC1
GND1

Primary side

Secondary side

Gate-driver ICs

1EDI302xAS & 1EDI303xAS (x = 0, 1, 3)
Primary side

1EDI305xAS
Primary side

VCC1

Primary
power supply

INP

PWM input

NFLT

OCP/DESAT
notification

NRST

Secondary side
GND2
Secondary
power supply

IGBT discretes andsilicon power diodes

GND1

VEE2
VCC2

Output stage
monitoring

TON
TOFF

Reset
Gate monitoring
Miller clamping
Corelesstransformer

SDI

SCLK

SPI
communicationinterface

Dual ADC

ADC output/shootthrough protection

TOUTP
ISENSEPISENSEN

OCPP1
OCPN1

AIP2
AIN2

Internal
supervision

VBATS

DESAT

AIP1/ASCSNCS
ADCPWM/INN

AMCLP1

Microcontrollers

SDO

Short circuit
protection
OCP pin open
detection

CLAMP/GATE1

Flyback
controller

GND1

GND2
Parallel powerdevice clamping &monitoring
available in
1EDI3051

CLAMP/GATE2AMCLP2

USB-C controllers
and peripherals

SI2

Status notification+
Safe state inputs

OCPP2
OCPN2

Power
management ICs

SI1Intelligent powerswitches and modules

RDY

The following evaluation boards are available:

Sensors

WBG semiconductors‒ 1EDI303XAS EVALBOARD‒ 1EDI302XAS EVALBOARD‒ 1EDI3050 EVAL BOARD‒ 1EDI3051 EVAL BOARD

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15-300 V MOSFETs

Infineon Solid State Relays (SSR) technologies
Using Infineon power-switch technologies, Infineon Solid State Relays (SSRs) are remotely controlled switches (on/off)with complete galvanic isolation from input to output. No power supply is needed on the output.

IGBT discretes andsilicon power diodes
Powermanagement ICs

1000

100

PVR

1

1

10
Rated op. current Ie

SSI
100

1000
Sensors

0.1

PVI

WBG semiconductors

10

Click here to learn more:
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SupportRated voltage VDS(br)Intelligent powerswitches and modules
USB-C controllers
and peripherals

Infineon SSRs can be used in a wide range of applications:‒ Electro-mechanical relay (EMR) replacement‒ Battery management systems‒ UPS‒ Automatic test equipment‒ Instrumentation systems‒ Industrial automation‒ Thermostats‒ Programmable logic controller‒ Power Distribution Units (PDU)‒ Building Automation‒ HVAC Controllers

Microcontrollers

Main benefits of Infineon SSR technology:‒ Optically isolated and Coreless Transformer – based technology provides galvanic isolation for safety applications‒ Wide range of applications from industrial automation to test equipment‒ Established and reliable products with over 20 years of history

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

Two main sub-groups:‒ Isolated: Photovoltaic (PVI) And Coreless Transformer (Solid State Isolators-SSI)– Isolated, low-power DC voltage sources capable of driving MOSFET or IGBT gates directly‒ Photovoltaic relays (PVR)– PVI plus internal power MOSFET

Key advantages over electromechanical relays:‒ Low total cost of ownership‒ Silent operation‒ No contact bounce‒ Compact solution‒ Fast response time
‒ High input sensitivity‒ High reliability with long operational life
‒ Insensitivity to stray EMF, shock, and vibration‒ Stable contact resistance over life

Applications

Solutions

EiceDRIVER™ highlight products

239

Solutions

Gate-driver ICs nomenclature

Applications

Nomenclature
21

10

D

S

500-950 V MOSFETs

IR

Technology generation
IR = Gen2 high-voltage driver IC
IRS = Gen5 high-voltage driver IC
Voltage class
20 = 200 V
21 = 600 V
22 = 1200 V
23 = 600 V
26 = 600 V feature adder
44 = low-side driver

Gate-driver ICs

Package type
S = SOICJ = PLCC44
M = MLPQ
Q = MFQP
L = SOT-23
B/F = die part
Blank: PDIP

Automotive rating

Additional features
D = bootstrap
Blank = without bootstrap

Digital isolators

AU

15-300 V MOSFETs

Naming convention for existing families of gate-driver ICs

Minimum drive strength
in hundreds of milliamps
Optimal switch TypeH = high-speed IGBTI = IGBTJ = JFETN = MOSFETIntelligent powerswitches and modules

F

Package type
F = DSO8-150 mil
H = DSO8-300 mil

Microcontrollers

A

Key features
A = separate sink/source
B = Bootstrap diodeD = DESAT
M = active Miller clamp
S = slew rate control
T = two-level turn-off

USB-C controllers
and peripherals

12

Power
management ICs

Isolation technology
S = reinforced galvanic isolation
B = basic galvanic isolation
I = functional galvanic isolation
C = UL certified functional galvanic isolation
L = level-shifting (SOI)
N = non-isolated driverI

Voltage class
06 = 600 V
12 = 1200 V

WBG semiconductors

Number of channels
1 = 1-ch EiceDRIVER™
2 = 2-ch (half-bridge) EiceDRIVER™
6 = 6-ch (3-phase) EiceDRIVER™

60

Sensors

I

Support1ED

IGBT discretes andsilicon power diodes

Driver type
3 = 3-phase driver
7 = current-sense IC
Other: half-bridge, high-side/low-side, etc.

240

Solutions

Gate-driver ICs nomenclature

2

ED

N

7

52

Voltage class, e.g.
01 = <200 V
02 = 200 V
06 = 600 V
07 = 700 V
12 = 1200 V
16 = 1600 V
17 = 1700 V

4F

ED = EiceDRIVERTMUVLO threshold
6 = reserved
7 = ~ 4.2 V
8=~8V
9 = reserved

Microcontrollers

Control Inputs
3 = inverted
4 = non-inverted
5 = mixed
6 = differential

USB-C controllers
and peripherals{“i” used todesignate any typeof galvanic isolation

Intelligent powerswitches and modules

Package
F = DSO 150 mil, 1.27 mm
H = DSO 300 mil, 1.27 mm
B = SOT-23
G = VDSON
R = TSSOP (“mini DSO-8”)
K = LGA

Number of channels

Isolation class
N = non-isolated
F = functional isolation
B = basic isolation
S = reinforced isolation

Gate-driver ICs

Product number/voltage
Flexible

500-950 V MOSFETs

Package type, e.g.
B = SOT23
F = DSO8-150 mil
H = DSO8-300 mil
C = Bare die single chipJ = SO14-150 mil
M = SO16-300 mil
P = SO20-300 mil
R = TSSOP28-140 mil
T = SO28-300 mil
V = SO36-300 mil

Number of channels
1 = 1-ch EiceDRIVER™
2 = 2-ch (half-bridge) EiceDRIVER™
6 = 6-ch (3-phase) EiceDRIVER™

Technology indicator
M = coreless transformer (inductive)
N = non-isolated driver (low-side drivers)
J = junction level shifting (non-SOI)[x] Optional
S = Infineon SOI
C = isolation-certified
S = reinforced isolation
B = basic isolation
U/C = UL 1577-certified

15-300 V MOSFETs

F

06

Digital isolators

S[x]IGBT discretes andsilicon power diodes

2304

2ED

Applications

Naming convention for existing and upcoming families of gate-driver ICs

Family ID
xx = 2 digits

ED = EiceDRIVER™
Max. automotive board net category
12= 12 V
24= 24 V
48= 48 V

20

A

–

EM

WBG semiconductors

Number of channels
1= 1-ch2= 2-ch48

Package type / technology
EM = exposed pad DSO – 150mil
Optional
A = ISO 26262 compliant

Sensors

ED

Product number
flexible

Support2

Power
management ICs

Naming convention for existing and upcoming families of gate-driver ICs

241

Further information, datasheets and documents

Gate driver IC community FAQs
www.infineon.com/gdforum

Gate driver selection tools
www.infineon.com/gdfinder

Gate driver simulation (SPICE) models
www.infineon.com/gdmodel

Cross reference tool
www.infineon.com/crs

www.infineon.com/gatedriver-cn (CN)www.infineon.com/ifxdesigner
www.infineon.com/gdevalboards
www.infineon.com/gdlowsidewww.infineon.com/eicedriver-xEV
www.infineon.com/eicedriver-apd

Solutions
WBG semiconductors

www.infineon.com/src
www.infineon.com/src-cn (CN)www.infineon.com/1ED4417x
www.infineon.com/1EDN
www.infineon.com/2EDN
www.infineon.com/TDI
www.infineon.com/2EDL8
www.infineon.com/gatedriver

Sensorswww.infineon.com/200vhvic
www.infineon.com/700vhvic
www.infineon.com/1200vhvic
www.infineon.com/gdsic
www.infineon.com/gdsic-cn (CN)www.infineon.com/gdcompact
www.infineon.com/gdlowside
www.Infineon.com/gdenhanced

USB-C controllers
and peripherals

Useful links and helpful information

Powermanagement ICs

Infineon support for gate-driver ICs

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

15-300 V MOSFETs

Applications

Gate-driver ICs support

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www.infineon.com/xxxxxxx

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Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules
Microcontrollers
USB-C controllers
and peripherals
Powermanagement ICs
WBG semiconductors

Digital isolators

Sensors‒ ISOFACE™ dual-channel digital isolators‒ ISOFACE™ quad-channel digital isolators

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Applications

Solutions

Digital isolators

ISOFACE™ dual-channel digital isolators

15-300 V MOSFETs

Robust digital isolators with precise timing and low power consumption

500-950 V MOSFETs

ISOFACE™ digital isolators are based on Infineon’s coreless transformer (CT) technology and provide robust isolation
for high voltage applications. They are the preferred choice for isolated gate signal transfer in high-density power
designs and isolated communication such as UART or CAN.
The 2DIBx4xxF family features

Digital isolators

Gate-driver ICs‒ Dual-channel digital isolators with eight variants and data rates up to 40 Mbits/s‒ 3 kVRMS isolation voltage‒ CMOS/TTL input thresholds‒ High common-mode transient immunity (CMTI)‒ Accurate timing performance‒ Wide operating supply voltage from 2.7 to 6.5 V
Product variants

2DIB0411F
2DIB1410F

1 forward
1 reverse
(1+1)

High
Low
High

2 forward
0 reverse
(2+0)

Low
Fixed
(TTL)

IGBT discretes andsilicon power diodes

Variable(CMOS)

1 forward
1 reverse(1+1)

2DIB1411F

Package

PG-DSO-8
5 x 4 mm

High
Low
High

Microcontrollers

2DIB0410F

VISO = 3000 VRMS
(UL1577 Ed. 5)

Default output state
LowIntelligent powerswitches and modules

2DIB1400F

Input thresholds

Key features

Key benefits– High CMTI > 100 V/ns
– Wide supply voltage range 2.7 - 6.5 V (abs. max. 7.5 V)– TTL or CMOS input threshold– Typical propagation delay 26 ns with -4/+6 ns spread– Both high and low fail-safe default output state– Both component and system level certification– Pin-to-pin compatibility– High immunity against system noise or high dv/dt– Reliable performance in SMPS with switching noise on IC power supply– Optimized noise margin for different applications– For high system power efficiency– Reliable high or low default output state in case of failures– Simplified system certification process– For easy device replacement and alternative sourcing

Microcontroller,
DSP











Gate driver
Microcontroller,
DSP
Transceiver(CAN)

USB-C controllers
and peripherals

Features and benefits

Infineon ISOFACE™ dual-channel digitalisolators are used to transfer gate driving
and communication signals like CAN
and UART over the isolation barrier. Withhigh robustness and accurate switching
characteristics, they are suitable forhigh power density designs and isolated
communication systems.

Powermanagement ICs

2DIB0401F

2DIB1401F

Channel configuration
2 forward
0 reverse(2+0)

WBG semiconductors

Isolation rating

Sensors

Part number
2DIB0400F

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Solutions

Digital isolators

Infineon ISOFACE™ dual-channel digital isolator 2DIB0410F (with 2 forward channels) provides robust isolation forhigh voltage applications. With a wide supply voltage range, TTL input thresholds and default output state low, it is theperfect fit for high-power density DC-DC brick applications.

UVLO

UVLO

LDO

RX

INB

Logic

TX

Logic

OUTA

Logic

OUTB

Gate-driver ICs

TX
Input to output

Logic

isolation

INA

VDD2
LDO

WDT

RX

Digital isolators

VDD1

500-950 V MOSFETs

Block diagram of 2DIB041xF with two forward data channels

15-300 V MOSFETs

Applications

Dual-channel digital isolator 2DIB0410F in SOIC-8 narrow body package

WDT
GND1

IGBT discretes andsilicon power diodes

GND2

Key benefits– High CMTI > 100 V/ns
– Wide operating supply voltage range 2.7 - 6.5 V (abs. max. 7.5 V)– TTL input threshold– Integrated glitch filter– Default low fail-safe output state– Both component and system-level certification– High immunity against system noise– Reliable performance in SMPS with switching noise on IC power supply– Optimized noise margin for SMPS applications– Effective noise suppression in SMPS applications– Reliable low output state in case of failures– Simplified system certification process

Microcontrollers

Key features

Intelligent powerswitches and modules

Features and benefits

USB-C controllers
and peripherals

2DIB0410F used in isolated DC-DC brick application

Sensors

WBG semiconductors

Powermanagement ICs

Infineon ISOFACE™ dual-channel
digital isolator 2DIB0410F is aperfect fit for isolated DC-DC brickapplications to transfer half- or fullbridge gate driving signals. The twochannel configuration allows transfer
of low- and high-side gate-signals
over the isolation barrier.

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Digital isolators

Applications

Dual-channel digital isolator 2DIB1410F in SOIC-8 narrow body package

500-950 V MOSFETs

15-300 V MOSFETs

Infineon ISOFACE™ dual-channel digital isolator 2DIB1410F (with one forward and one reverse channel) provides
robust isolation for high voltage applications. With high common-mode transient immunity (>100 V/ns), TTL input
threshold, and default low output state, it is the perfect match for GaN-IPS with high dv/dt in high-density power
designs (GaN with integrated non-isolated gate driver).

Block diagram of 2DIB14xxF with one forward and one reverse data channel
UVLO

UVLO

RX

WDT

INB

Logic

TX

Logic

INA

RX

Logic

OUTB

isolation

Logic

Input to output

OUTA

VDD2
LDO

Gate-driver ICs

LDO

TX

Digital isolators

VDD1

IGBT discretes andsilicon power diodes

WDT
GND2

Microcontrollers– For GaN with integrated non-isolated gate driver with high dv/dt– Reliable performance in SMPS with switching noises on IC power supply– Optimized noise margin for SMPS applications– Effective noise suppression in SMPS applications– Reliable low output state in case of failures– Simplified system certification process

2DIB1410F used in totem-pole PFC with GaN IPS
VBUSIntergrated GaN

High side
CVDDH

1 + 1 digital isolator

VDD1

VDD

VDD2

+5V

OUTA

RX

TX

INA

FAULT

INB

TX

RX

OUTB

PWM

Microcontroller
GND1

D

S

GND2
DB

2DIB1410F
Intergrated GaN

RB
+12 V

VDD
CVDD

Infineon ISOFACE™ dual-channel
digital isolator 2DIB1410F can be used
together with GaN IPS for high-side
floating drive. One forward channel
is used to transfer the gate signal.
The reverse channel can be used forprotection signal.

D

+5V
FAULT
PWM

S

USB-C controllers
and peripherals

Key benefits– High CMTI > 100 V/ns
– Wide supply voltage range 2.7 - 6.5 V (abs. max. 7.5 V)– TTL input threshold– Integrated glitch filter– Default low fail-safe output state– Both component and system-level certification

Powermanagement ICs

Key features

Intelligent powerswitches and modules

Features and benefits

WBG semiconductors

GND1

Sensors

Low side

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Applications

Solutions

Digital isolators

ISOFACE™ quad-channel digital isolators

15-300 V MOSFETs

Robust digital isolators with precise timing and low power consumption

500-950 V MOSFETs

ISOFACE™ digital isolators are based on Infineon’s coreless transformer (CT) technology and provide reinforced
isolation for high-voltage applications. They are the preferred choice for isolated gate signal transfer in high-density
power designs and isolated communication such as UART/CAN and SPI. The quad-channel digital isolators also offer
AEC-Q variants to meet even stringent customer application requirements.

Digital isolators

Gate-driver ICs

The 4DIRx4xxH family features‒ Quad-channel digital isolators with eight variants and data rates up to 40 Mbits/s‒ 5.7 kVRMS isolation voltage‒ Active high or low enable logic level for the output on Side 1‒ High common-mode transient immunity (CMTI)‒ Accurate timing performance‒ Wide operating supply voltage from 2.7 to 6.5 V
Product variants

4DIR1400H(A)1)

4 forward
0 reverse (4+0)

4DIR2400H(A) 1)

4DIR1420H(A)4DIR1421H(A)1)

PackageHigh
Low
Active-high

2 forward
2 reverse (2+2)

4DIR2401H(A) 1)

Default output stateLow

3 forward
1 reverse (3+1)

4DIR1401H(A) 1)

1)

Output enable

IGBT discretes andsilicon power diodes

4DIR0401H(A)1)

Channel configuration

HighIntelligent powerswitches and modules

4DIR0400H(A)1)

PG-DSO-16 300 mil

Low
High

3 forward
1 reverse (3+1)

Low
Active-low

Microcontrollers

Part number

High

Features and benefits
Key benefits

Gate Drivers

OptiMOS™
CoolMOS™
GaN / SiC

Infineon ISOFACE™ quad-channel digital isolators transfer
gate driving and communication signals like CAN/UARTand SPI over the isolation barrier.

WBG semiconductors

Control ICs

Sensors

Digital isolators– High immunity against system noise and high dv/dt– Reliable performance in UART/CAN and SPI communication– Compatible with chip select function in SPI communication– For high system power efficiency– Reliable high or low default output state in case of failures– Simplified system certification process– For easy device replacement and alternative sourcing

USB-C controllers
and peripherals– High CMTI > 100 V/µs
– Wide supply voltage range 2.7 - 6.5 V (abs. max. 7.5 V)– Active high or low enable logic level for the output on Side 1– Typical propagation delay 26 ns with -5/+6 ns spread– Both high and low fail-safe default output state– Both component- and system-level certification– Pin-to-pin compatibilityPowermanagement ICs

Key features

Click here to learn more:

1) (A)* = AEC-Q100 qualified

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Solutions

Digital isolators

Applications

Quad-channel digital isolator 4DIR2401H in SOIC-16 wide body package

15-300 V MOSFETs

Infineon ISOFACE™ quad-channel digital isolator 4DIR2401H (with 2 forward and 2 reverse channels) provides robust
isolation for high-voltage applications. With a wide supply voltage range, CMOS input threshold, and default output
state high, it is the perfect fit for a wide range of SMPS applications and isolated communication like UART/CAN.

GND1

GND2

INA

TX

RX

OUTA

INB

TX

RX

OUTB

OUTC

RX

TX

INC

OUTD

RX

TX

IND
EN2

GND1

GND2

IGBT discretes andsilicon power diodes

EN1

Gate-driver ICs

VDD2

Digital isolators

VDD1

500-950 V MOSFETs

4DIR240xH with 2 forward and 2 reverse data channels

VCC1

VDD1

VDD2

CS0

GND1

GND2

SCK

INA

OUTA

MOSI

INB

OUTB

MISO

INC

OUTC

CS1

OUTD

IND

GND

EN1

EN2

GND1

GND2

CVDD1

  
CVDD2

CCAN

VCC

N.C.

RxD

CANH

CANH

TxD

CANL

CANL

GND

STB

Infineon ISOFACE™ quad-channel
digital isolators 4DIR2401H can be usedin SMPS applications for inter-board
communication and other isolated
communication like UART/CAN.

Sensors

VDD

VCC2

WBG semiconductors    

Microcontrollers– High immunity against system noise– Reliable performance in UART/CAN and SPI communication– Output enable function for system-level protection– For high system power efficiency– Reliable low default output state in case of failures– Simplified system certification process– For easy device replacement and alternative sourcing

USB-C controllers
and peripherals

Key benefits– High CMTI > 100 V/µs
– Wide supply voltage range 2.7 - 6.5 V (abs. max. 7.5 V)– Active high enable logic level for the output on Side 1– Typical propagation delay 26 ns with -5/+6 ns spread– Low fail-safe default output state– Both component- and system-level certification– Pin-to-pin compatibilityPowermanagement ICs

Key features

Intelligent powerswitches and modules

Features and benefits

Click here to learn more:
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Solutions

Digital isolators

Applications

Quad-channel digital isolator 4DIR1421H in SOIC-16 wide body package

15-300 V MOSFETs

Infineon ISOFACE™ quad-channel digital isolator 4DIR1421H (with 3 forward and 1 reverse channels) provides robust
isolation for high-voltage applications. With a wide supply voltage range, active-low enable logic level for the output
on side 1 and default output state low; it is the perfect fit for isolated SPI communication.

GND1

GND2

INA

TX

RX

OUTA

INB

TX

RX

OUTB

INC

RX

TX

OUTC

OUTD

RX

TX

IND
EN2

GND1

GND2

IGBT discretes andsilicon power diodes

EN1

Gate-driver ICs

VDD2

Digital isolators

VDD1

500-950 V MOSFETs

4DIR142xH with 3 forward and 1 reverse data channels

     

VISO

VCC



 

VDD1

VDD2

VDD

GND1

GND2

VDD

CS0

INA

OUTA

CS0

SCK

INB

OUTB

SCK

MOSI

INC

OUTC

MOSI

MISO

OUTD

IND

MISO

CS1

EN1

EN2

GND

GND1

GND2

CVDD2

VISO

GND

Microcontrollers
Sensors

CVDD1

Infineon ISOFACE™ quad-channel
digital isolator 4DIR1420H
is designed for isolated SPI
communication. The negative
enable logic level for output on side
1 is compatible with the chip selectfunction of SPI communication
controllers. The default high output
state is designed not to block the SPI
communication bus in case of failureon the input side.

USB-C controllers
and peripherals– High immunity against system noise– Reliable performance in SPI communication– Compatible with chip select function in SPI communication– For high system power efficiency– Reliable high output state in case of failures– Simplified system certification process– For easy device replacement and alternative sourcing

Powermanagement ICs

Key benefits– High CMTI > 100 V/µs
– Wide supply voltage range 2.7 - 6.5 V (abs. max. 7.5 V)– Active low enable logic level for the output on Side 1– Typical propagation delay 26 ns with -5/+6 ns spread– High fail-safe default output state– Both component- and system-level certification– Pin-to-pin compatibility

WBG semiconductors

Key features

Intelligent powerswitches and modules

Features and benefits

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Solutions

Digital isolators

Applications

Quad-channel digital isolator 4DIR1400H in SOIC-16 wide body package

15-300 V MOSFETs

Infineon ISOFACE™ quad-channel digital isolator 4DIR1400H (with 3 forward and 1 reverse channels) provides robust
isolation for high-voltage applications. With a wide supply voltage range, active-high enable logic level for the output
on side 1 and default output state low. It is the perfect fit for a wide range of applications, including telecom/server
PSU, industrial SMPS, EV-charging, and industrial drives.

RX

OUTA

INB

TX

RX

OUTB

INC

RX

TX

OUTC

OUTD

RX

TX

IND

EN1

EN2

GND1

GND2

Gate-driver ICs

TX

Digital isolators

INA

IGBT discretes andsilicon power diodes

GND2

Key benefits– High CMTI > 100 V/µs
– Wide supply voltage range 2.7 - 6.5 V (abs. max. 7.5 V)– Active high enable logic level for the output on Side 1– Typical propagation delay 26 ns with -5/+6 ns spread– Low fail-safe default output state– Both component and system-level certification– Pin-to-pin compatibility– High immunity against system noise– Reliable performance in UART/CAN and SPI communication– Output enable function for system level protection– For high system power efficiency– Reliable low default output state in case of failures– Simplified system certification process– For easy device replacement and alternative sourcing

Microcontrollers

Key features

Intelligent powerswitches and modules

Features and benefits

Sensors

Infineon ISOFACE™ quad-channel digital isolators
4DIR1400H can be used for HV DC-DC Converter in
PSU for telecom and server. The quad-channel digitalisolator controls the primary LLC converter indirectly
and communicates with the PFC controller through thereinforced isolation barrier. Two data channels are used
to transfer the half-bridge PWM control signals (HS and
LS). The remaining two data channels are used for UART
communication between the primary-side PFC controller
and the secondary-side LLC controller. The default low
output state ensures the safe turn-off of the half-bridge
MOSFETs in any fault condition.

USB-C controllers
and peripherals

GND1

Power
management ICs

VDD2

WBG semiconductors

VDD1

500-950 V MOSFETs

4DIR140xH with 3 forward and 1 reverse data channels

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Solutions
Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

15-300 V MOSFETs

Applications

Gate-driver ICs support

USB-C controllers
and peripherals

Infineon support for digital isolators
Useful links and helpful information

Powermanagement ICs

Further information, datasheets, and documents

Sensors

WBG semiconductors

www.infineon.com/digitalisolators

Click here to learn more:
www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

Supportwww.infineon.com/smps
www.infineon.com/xxxxxxx

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Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules
Microcontrollers
Powermanagement ICs

USB-C controllers
and peripherals

Click here to learn more:

www.infineon.com/smps
www.infineon.com/xxxxxxx

www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

Sensors‒ TRENCHST0OP™ 5 selection tree
‒ IGBT selection tree
‒ Discrete IGBTs product portfolio‒ Silicon power diodes‒ CoolSiC™ hybrid devices portfolio‒ Discrete IGBT nomenclature‒ Silicon power diodes nomenclature
www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

Support‒ Discrete IGBTs‒ 650 V - 1200 V TRENCHSTOP™ IGBT7 T7, H7 and S7‒ 1200 V and above IGBT families‒ 650 V TRENCHSTOP™ IGBTs‒ Lower power drive IGBT portfolio‒ 650 V Reverse Conducting R6 IGBT‒ TRENCHSTOP™ advanced isolation

WBG semiconductors

Discrete IGBTs and silicon power diodes252

Applications

Solutions

Discrete IGBTs

Discrete IGBTs

15-300 V MOSFETs

Market leadership through groundbreaking innovation and application focus< 1 k voltage rating

500-950 V MOSFETs

Resolute to achieve the highest
standards
in forperformance
quality,
Infineonoffers a comprehensive portfolio of
IGBT
discretes
industrial and/ homeappliance
applications
application-specific discrete IGBTs. From 600 V up to 1600 V, we offer a wide range of IGBT voltage classes to meet difClick the product families below to learn more
ferent voltage requirements in each application.
> 1 k voltage rating

Gate-driver ICs

40 – 100 kHz

650 V CoolSiC™ hybrid discrete
650 V TRENCHSTOP™ 5

10 – 100 kHz
650 V TRENCHSTOP™ H7

3 μs

1200 V TRENCHSTOP™ 2

10 μs

20 kHz1200 V TRENCHSTOP™ IGBT7 S7

8 μs

1200 V TRENCHSTOP™

10 μs

3 μs

600 V RC-D2

5 μs

600 V TRENCHSTOP™

5 μs

600 V RC-DF

5 μs

600 V RC-D

15 kHz3 μs

750 V IGBT EDT2

10 kHz75 kHz1100/1200/1350/1600 V Reverse Conducting R5

650 V Reverse Conducting R5

60 kHzfsw [kHz] (typical used up to)µs

Short circuit withstand time [µs]TO247Plus

package information

package information

Automotive IGBTs
information

Sensors

WBG semiconductors

Powermanagement ICs

Advanced Isolation

Click here to learn more:
www.infineon.com/gatedriver
www.infineon.com/igbtdiscretes

www.infineon.com/trenchstop5
www.infineon.com/rapiddiodes
www.infineon.com/advanced-isolation

SupportkHz

USB-C controllers
and peripherals

1400 V Reverse Conducting R5L

Resonant switching

650 V Reverse Conducting R6

IGBT discretes andsilicon power diodes

1200 V TRENCHSTOP™ IGBT6

30 kHzIntelligent powerswitches and modules

1200 V TRENCHSTOP™ IGBT7 H7650 V TRENCHSTOP™ IGBT7 T7

Hard switching

5 μs

Digital isolators

10 μs

1200 V HighSpeed 3 H340 kHzMicrocontrollers

600 V HighSpeed3 H3

5 μs

253

650 V - 1200 V TRENCHSTOP™ IGBT7 T7, H7, and S7
The 7th generation of TRENCHSTOP™ IGBTs sets a new benchmark in the world of discrete IGBT and diode technology. With
its outstanding performance, it is the fastest IGBT on the market and boasts the highest power density with current rating
devices up to 150 A. For the first time ever, this technology is now available in the 650 and 1200 V discrete IGBT market.

2 voltage classes 650 V and 1200 V
3 flavours T7, H7, and S7
5 Packages

Digital isolators

Fulfilling the needs of decarbonization and industry 4.0

IGBT discretes andsilicon power diodes

Produced in 300 mm fab
Enabling future growthIntelligent powerswitches and modules

The extensive portfolio of 650 V/1200 V TRENCHSTOP™ IGBT7 T7, H7, and S7 is specifically designed to meet thedemands of various applications, including solar photovoltaic, uninterruptible power supplies, battery chargers, andindustrial drives. This unique discrete offering provides a high current rating portfolio up to 150 A in four different
package types, with conduction parameter V(CE)sat 50 percent lower compared to previous generations and switchinglosses up to 84 percent lower.
1200 V IGBTs key parameters
VCE(sat) vs. ETOTAL

9.0

T2 SC Short Circuit
S7 SC
H3 SC

7.0

USB-C controllers
and peripherals

7.5
6.5
6.0
5.5
4.5
4.0
1.9

H7
2.0

2.1
2.2
2.3
2.4
VCE(sat) @ Inom, 175 °C [V]

2.5

Power
management ICs

5.0

2.6

WBG semiconductors

ETOTAL @ Inom, 175 °C [mJ]

8.5
8.0

Microcontrollers

Dynamic requirements

500-950 V MOSFETs

Infineon has revolutionized the world of IGBTs with the 7th generation of TRENCHSTOP™ IGBTs, designed with the latest
micro-pattern trench technology. This advanced technology offers unparalleled control and performance, resulting insignificant loss reduction, improved efficiency, and increased power density in your applications.

Gate-driver ICs

It’s time to SWITCH!

15-300 V MOSFETs

Applications

Solutions

650 V - 1200 V TRENCHSTOP™
IGBT7 T7, H7 and S7

Make the switch today and revolutionize your applications!

Sensors

Don’t miss out on this opportunity to upgrade your applications with the latest and greatest in IGBT technology. The
7th generation of TRENCHSTOP™ IGBTs offers unparalleled performance and efficiency, making it the perfect choice forany application looking to take their power awnd performance to the next level. Make the switch today!

Click here to learn more:
www.infineon.com/trenchstop5
www.infineon.com/rapiddiodes
www.infineon.com/advanced-isolation

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The 7th generation of TRENCHSTOP™ IGBTs, known as 650 V IGBT T7 and H7 and 1200 V IGBT7 H7 and S7, are setting
new standards in the market. With its unparalleled speed, it is the fastest IGBT currently available. Furthermore, theIGBT7 boasts a remarkable power density, making it a top performer in terms of efficiency and performance. As a direct
replacement for all previous industrial IGBT generations, including the high-voltage TRENCHSTOP™ T2 andHighSpeed 3 H3 series, these devices are an excellent choice for those looking to upgrade their technology andimprove their system’s overall performance.

IGBT discretes andsilicon power diodes

EiceDRIVER™ isolated gate driver like X3 Compact family and EiceDRIVER™ 1200 V level shift gate driver family are
perfect match for the 1200 V IGBT in motor control, general purpose inverter, solar, and UPS applications. EiceDRIVER™
low-side gate driver with overcurrent protection is widely used in induction cooking application.

TRENCHSTOP™ 7 H7TRENCHSTOP™ 7 S7 (hard switching)Intelligent powerswitches and modules

TRENCHSTOP™ 2 (hard switching)
HighSpeed 3 H3 (hard switching)Reverse Conducting R5 and R5L (resonant switching)Reverse Conducting
R5 and R5L

15

20

25

30

World-class
Reverse Conducting RC-H products– High performance and low losses

35– High speed/high power IGBT
– First tailless/low-loss IGBT on market– Market proven and recognized quality leader– New low switching losses and high power IGBTs
TRENCHSTOP™ IGBT7 S7 – Optimized for operation up to 20 kHz– Best-in-class VCE(sat) and low switching losses

45

50

55

60 kHzInduction cooking
Resonant switching– Medium to high frequency converters
Solar, ESS, UPS, welding– Medium frequency converters– Industrial drives, solar, HVAC
– Low/medium frequency converters

Sensors

WBG semiconductors

Powermanagement ICs

TRENCHSTOP™ 7 H740

Microcontrollers

10

USB-C controllers
and peripherals

5

Click here to learn more:
www.infineon.com/gatedriver
www.infineon.com/igbtdiscretes

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Support0

Digital isolators

Gate-driver ICs

The Reverse Conducting R5 and R5L are the latest generations in the RC-H series of reverse conducting IGBT. Witha monolithically integrated diode, they offer optimized performance for resonant switching applications such as
induction cooking. R5 devices are available in 1100 V, 1200 V, 1350 V, and 1600 V blocking voltage while R5L devices areavailable in 1400 V blocking voltage.

500-950 V MOSFETs

1200 V and above IGBT families

15-300 V MOSFETs

Applications

Solutions

1200 V discrete IGBTs

255

Applications

Solutions

650 V TRENCHSTOP™ 5

650 V TRENCHSTOP™ 5 IGBT

Gate-driver ICs

500-950 V MOSFETs

15-300 V MOSFETs

Ideally suited for customers who are looking for outstanding efficiency and power density, the TRENCHSTOP™ 5 is
optimized to comprehend various switching frequencies. Wafer thickness has been reduced by more than 25 percent,which enables a dramatic improvement in both switching and conduction losses while providing an increased
breakthrough voltage of 650 V. Based on the TRENCHSTOP™ 5 IGBT technology, Infineon has developed six different
product families targeting specific applications, allowing designers to optimize for high efficiency, system cost or
reliability demands of the market. The quantum leap of efficiency improvement provided by the TRENCHSTOP™ 5
IGBT families opens up new opportunities for designers to explore. EiceDRIVER™ isolated gate driver such as the X3Compact family which is perfect for 650 V IGBTs in solar and UPS applications. EiceDRIVER™ low side gate driver withovercurrent protection is widely used in induction cooking application and PFC stage.

TRENCHSTOP™ 5 F5 (hard switching)(hard switching)

TRENCHSTOP™ 5 S5 (hard switching)
TRENCHSTOP™ 5 WR5/WR6 (resonant switching)

60

70

TRENCHSTOP™ 5 L5Best-in-class IGBT
low VCE(sat) IGBT– VCE(sat) IGBT – 1.05 V– Best trade-off VCE(sat) VSS Ets for frequencies below 20 kHz

TRENCHSTOP™ 5 S5Best-in-class ease-of-use IGBT
Elimination of:– Collector-emitter snubber capacitor and gate capacitor
in low inductance designs (<100 nH)– Softer switching than TRENCHSTOP™ 5 H5TRENCHSTOP™ 5 H5/F580

90Best-in-class high frequency IGBT
– Bridge to SJ MOSFET performance– Highest efficiency, especially under light load conditions

100

110

120

130

140

150 kHz

IGBT discretes andsilicon power diodes

50

Solar, UPS, welding– Ultralow frequency converters– Three-level inverter type I NPC 1 and NPC 2– Modified HERIC inverter– AC output (aluminum/magnesium welding)Intelligent powerswitches and modules

40

UPS, battery charger, solar, welding– Medium frequency converters– Multilevel inverter stages– Output stages– PFC

Microcontrollers

30

UPS, solar, welding– High frequency converters– Multilevel inverter stages– Output stages– PFC

TRENCHSTOP™ 5 WR5Price optimized reverse conducting TRENCHSTOP™ 5 with an optimized mo- Air conditioning, welding
nolithically integrated diode tailored for specific hard switching applications – RAC/CAC PFC outdoor compressor– Compact/portable welding– Monolithic diode optimized for PFC and welding applications– Light-medium industrial welding– Excellent RG controllability– Perfect fit to mainstream design for 20 kHz < fsw < 60 kHz

TRENCHSTOP™ 5 WR6

Outstanding price/performance ratio with the latest 650 V
reverse-conducting IGBT in the new high creepage TO-247-3 package– Very low VCE(sat) of 1.45 V at 25°C
– High creepage and clearance TO-247 package– Optimized for full-rated hard switching turn-off

USB-C controllers
and peripherals

20

Air conditioning, welding– RAC/CAC PFC outdoor compressor– Compact/portable welding– Light-medium industrial welding

Sensors

WBG semiconductors

Powermanagement ICs

10

Click here to learn more:
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www.infineon.com/igbtdiscretes

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Support0

Digital isolators

TRENCHSTOP™ 5 H5 (hard switching)
TRENCHSTOP™ 5 L5256

Solutions

Lower power drive IGBT portfolio

Applications

Lower power drive IGBT portfolio

15-300 V MOSFETs

600 V TRENCHSTOP IGBT 3 and 600 V RC-D2

Gate-driver ICs

500-950 V MOSFETs

Motor drives up to 1 kW are used in a wide variety of applications, from home appliance fans and compressors
to pumps. The market for these products demands design flexibility, EMI performance, and easy controllability.
Therefore, these compact motors require power electronics with the lowest losses and best thermal performance. The
TRENCHSTOP™ IGBT3 family of discrete devices has been designed for the low switching losses, which is particularly
important in systems with higher switching frequencies (up to 20 kHz). Additionally, the IGBTs are co-packed with thesoft, fast-recovery full-rated external Rapid 1 free-wheeling diode soft, fast-recovery anti-parallel Emitter Controlled
Diode for the reduced total losses. With a blocking voltage at 600 V, and short-circuit rating of 5 µs, TRENCHSTOP™
IGBT3 is a key contributor to robust motor designs.

Digital isolators

The RC-D2 family of discrete devices has been cost-optimized in surface-mounted packages. The device contains
a monolithically integrated diode and has HV-H3TRB ruggedness capability. With a blocking voltage at 600 V,
and 3 µs short-circuit rating , the RC-D2 is a key contributor to cost-effective motor designs.
Switch selection for low power drives < 300 W

Discretes

Exampleapplication:
refrigerator
compressor

High
integration
andreducedfootprint

Light load
efficiency
andESD
immunity

CoolMOS™
PFD7Full load
operation
andEMI
performance

TRENCHSTOP™
IGBT3
and RC-D2

Intelligent powerswitches and modules

Designflexibility
andcustomization

IGBT discretes andsilicon power diodes

Optimized design forMicrocontrollers

IPM

Key benefits– Available in surface-mounted packages– IGBT3 co-packed with and without diodes (D²PAK, TO-220, TO-220FP)– RC-D2 monolithically integrated diode (DPAK, SOT-223)– SC rating up to 5 µs
– Low EMI due to easy controllability– Enable space limited application– Performance improvement– Cost-optimized solution– SC protection– No need for additional components on PCB

Powermanagement ICs

Key features

USB-C controllers
and peripherals

Features and benefits

30
Eon [µJ]

40

50‒ Rg(on) and Rg(off) are selected to meet

IKD04N60RC2

Rg(off)=0 Ω

20

30
40
Eoff [µJ]5060

WBG semiconductors

5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10

dv/dt of 2 V/ns at 500 mA and Tj of
100°C‒ IGBTs (IKD04N60RC2) are easily
controllable by optimizing Rg values‒ EMI performance can be enhancedwith additional passive components

Sensors

5.0
4.5
4.0
3.5
3.0
2.5
2.0
Rg(on)=404 Ω
1.5
1.0
0.5
0.0
10
20

dv/dt(off) [V/ns]

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Supportdv/dt(on) [V/ns]

EMI performance257

Applications

Solutions

Reverse Conducting forsoft-switching applications

15-300 V MOSFETs

Reverse Conducting forsoft-switching applications
650 V Reverse Conducting R6 IGBT in TO-247 package

Gate-driver ICs

500-950 V MOSFETs

The 650 V R6 IGBT offers the lowest VCE(sat) and optimized Eoff for best efficiency, minimized power losses and cooling
effort. The good EMI behavior simplifies filtering design, reduces system costs and effort for the designers.
Thanks to the best system performances and high compatibility with the existing gate driver solution, 650 V R6 IGBT
represents the optimal choice for soft switching topologies.

Key features

Key benefits– Very low VCE(sat) and low Eoff

– Lowest losses on IGBT, high system efficiency for higher power output– Fast and easy replacement of predecessor R5 portfolio– High device reliability– Good EMI behavior– High ruggedness and stable temperature behavior– Maximum operating TJ of 175 °C

Digital isolators

Features and benefits

IGBT discretes andsilicon power diodes

Package innovations

SOT-223
SMD

TO-252(DPAK)

TO-263(D2PAK)

TO-220TO-220
FullPAKTO-247

TO-2474-pin

TO-247PLUS

TO-247PLUS
4-pin

TRENCHSTOP™
advanced
TO-247-3-HCC
isolation
TO-247

Configuration

600 V, 650 V
DuoPack IGBTs
with diode andsingle diodes

3-120 A

40-90 A

650 V

20 -70 A

Sensors

Continuous
collector
current
TC = 100°C

600 V, 650 V, 1100 V, 1200 V, 1350 V, 1600 V
DuoPack (with diode), single IGBTs

WBG semiconductors

Voltage classPower
management ICs

Package
options

USB-C controllers
and peripherals

Infineon discrete IGBT package portfolio contains SMD (surface mount device) packages, for example, D2PAK, DPAK,
SOT-223, and through-hole packages, for example, TO-220, TO-220 FP, TO-247, TO-247-3-HCC, TO-247-4, TO-247-4
asymetric (650V, 1200V; 76-136 A), TO-247PLUS, TO-247PLUS-4, and TO-247 advanced isolation packages. It provides
discrete IGBTs solutions with and without anti-parallel diode, which is an excellent fit to use in industrial, home
appliance, and automotive applications.

Microcontrollers

Intelligent powerswitches and modules

Discrete IGBT package overview

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258

Applications

Solutions

TRENCHSTOP™
advanced isolation

TRENCHSTOP™ advanced isolation

15-300 V MOSFETs

Fully isolated TO-247 package with industry leading IGBTs

500-950 V MOSFETs

TRENCHSTOP™ advanced isolation solution breaks the limits reached by traditional packaging and isolation
techniques. This new isolated package enables the highest power density, the best performance and the lowest
cooling effort thanks to an effective and reliable thermal path from the IGBT die to the heatsink.

Gate-driver ICs

In addition to providing 100 percent electrical isolation, TRENCHSTOP™ advanced isolation also eliminates the needfor thermal grease or thermal interface sheets. The new package delivers at least 35 percent lower thermal resistivity,
helping designers to increase power density, as well as lower system complexity and assembling costs.
This new package solution allows industrial and home appliance designs to fully utilize the high performance of
TRENCHSTOP™ IGBTs without compromises for isolation and cooling.

– 2500 VRMS electrical isolation, 50/60 Hz, t = 1 min– 100 percent tested isolated mounting surface– Lowest Rth(j-h)– Low coupling capacitance, 38 pF– No need for isolation film or thermal interface material– Up to 35 percent reduction in assembly time reduces manufacturing cost
– Increased power density– Improved reliability from higher yield and no isolation film misalignment– Less EMI filter design effort– Decreased heatsink size

IGBT discretes andsilicon power diodes

Key benefitsIntelligent powerswitches and modules

Key features

Digital isolators

Features and benefits

Thermal resistivity of package and isolation types

TO-247 withisolation film1)

Microcontrollers

TO-247
FullPAK

50% lower

USB-C controllers
and peripherals

35% lower
Advancedisolation
Rth(j-h)1) Isolation material: standard polyimide based reinforced carrier

WBG semiconductors

Reverse Conducting R5S

No SC rating
0 µsecFast H5

Medium-speed S5HighSpeed 3 H3SC rating
5 µsecTRENCHSTOP™

10

15

20

25

30

35

40

45

50

55

60 kHzSensors

5

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Support0

Power
management ICs

insulator film with 152 µm thickness, 1.3 W/mK thermal conductivity

259

Applications

Solutions

TRENCHSTOP™ 5 selection tree

20-300 V MOSFETs

TRENCHSTOP™ 5 selection tree

Free wheeling diode (FWD)Yes

30 kHz-120 kHz
high speed

50 Hz-20 kHz
low speed

10 kHz-40 kHz
high speed

20 kHz-75 kHzhigh speed

30 kHz-100 kHz
high speed

60 kHz-120 kHz
ultrahigh speed

Low VCE(sat)
TRENCHSTOP™ 5 L5TRENCHSTOP™ 5
H5/F5/S5

Low VCE(sat)
TRENCHSTOP™ 5 L5„Soft“TRENCHSTOP™ 5 S5

RC TRENCHSTOP™ 5
WR5 / WR6

TRENCHSTOP™ 5
H5

TRENCHSTOP™ 5
F5Corresponding best fit IGBT

IGW30N65L5

IGB15N65S5IKW30N65EL5IKW30N65ES5

IKW30N65WR5

IKP08N65H5

IKP08N65F5

IGW75N65H5

IGB20N65S5

IKW75N65EL5IKW40N65ES5IKW40N65WR5

IKP15N65H5

IKP15N65F5

IGB50N65S5IKZ75N65EL5IKW50N65ES5

IKW50N65WR5

IKP20N65H5

IKP20N65F5IKP30N65H5IKP30N65F5

IKWH30N65WR5

IKP40N65H5IKP40N65F5

IGP20N65H5/F5

IKW75N65ES5
IKW50N65SS5

IGP30N65H5/F5

IKW75N65SS5

IKWH20N65WR6

IKA08N65H5

IKA08N65F5

IGP40N65H5/F5(Discrete withIKWH30N65WR6

IKA15N65H5

IKA15N65F5SiC Schottky Diode)IKWH40N65WR6

IKW30N65H5

IKW40N65F5IKW40N65H5

IKW50N65F5

IGW40N65H5/F5

IKWH50N65WR6

IGW50N65H5/F5

IKWH60N65WR6

IGW75N65H5

IKWH70N65WR6

Intelligent powerswitches and modules

IGB50N65H5

IGBT discretes andsilicon power diodes

Corresponding best fit IGBT

Digital isolators

50 Hz-20 kHz
low speed

IKW50N65H5
IKW50N65EH5

Microcontrollers

IKW75N65EH5

IGZ50N65H5

Gate-driver ICs

No

500-950 V MOSFETs

650 V

IKW40N65RH5

IGZ75N65H5IKZ50N65ES5

IGZ100N65H5

IKW50N65RH5

IKZ75N65ES5IKW75N65RH5

IKZA75N65SS5

IKZ50N65EH5(Discrete with

IKZ75N65EH5

SiC Schottky Diode)

IKZ75N65EH5

IKB40N65ES5

IKB15N65EH5

IKB40N65EF5IKB20N65EH5
Power
management ICs

IKB30N65ES5

USB-C controllers
and peripherals

IKZA50N65SS5IKB30N65EH5

Sensors

WBG semiconductors

IKB40N65EH5

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260

IGBT selection tree

Applications

Solutions

Discrete IGBTs selection tree

IGBT
Diode commutation

Hard/no diode for IG** parts

20-300 V MOSFETs

Soft

2-40 kHz

10-40 kHzmedium speed

18-60 kHz
20-100kHz
high speed

10-100 kHz
high speed

20-75 kHzhigh speed

50 Hz-20 kHz
low speed

RC-drives(monolithic)

TRENCHSTOP™ 7

Soft turn-off
TRENCHSTOP™ 5S5HighSpeed 3
H3

TRENCHSTOP™ 5
H5/F5

TRENCHSTOP™ 5
WR5/WR6

Low VCE(sat)
TRENCHSTOP™ 5
L5

600 V

650 V, 1200 V

650 V

600 V, 1200 V

650 V

650 V

650 V

IKpccN60RC2
IKpccN60R

IKpccN65ET7

IKpccN65dS5

IKpccN60H3
IKpccN120H3

IKpccN65H5
IKpccN65F5

IKpccN65WR5
IKWHccN65WR6

IKpccN65EL5
IGW30N65L5

IGpccN60H3

IGpccN65H5
IGpccN65F5

UPS
Three-level NPC1
and NPC2 topology,
inner switches

Gate-driver ICs

8-75 kHzRC-H series (monolithic)

500-950 V MOSFETs

Frequency range

650 V, 1100 V, 1200 V,
1350 V, 1400 V, 1600 V

Digital isolators

Voltage range

IHWccNvvvR5
IHWccN65R6
IHWccN140R5L

IKpccN120CS7
IKpccN120CH7

IHFW40N65R5S

IGBT discretes andsilicon power diodes

Part number

Microcontrollers

Intelligent powerswitches and modules

IGpccN120S7*

UPS

PFC

PFC

Rice cooker

Solar inverter
Asymmetrical bridge
Symmetrical full-bridge
Three-level type I or three-level type II converter

Energy storage

Battery charger

Battery charger

Welding

RAC/CAC PFC
outdoorcompressor

Welding

UPS

Solar inverter

Solar

Microwave
Multifunction printers
Half-bridge resonant(Voltage resonance< 650 V)

Motor control
Three-phase inverter
Full-bridge inverter
Single-phase inverter

Single switch(Voltage resonance> 650 V)

Uninterruptable power supply
UPS bridge
Three-level type II converter

SMPS

Solar
Three-level NPC1
and NPC2 topology,
inner switches
Welding
AC output(Al/Mag welding)

Air conditioning
HVDC (telecom/data centers)
Totem pole PFC

Sensors

Major and small home appliances
Symmetrical full-bridge
Single-phase inverter

Energy storage

Welding inverter
Full-brigde
Half-bridge
Two transistor
forwardPower
management ICs

Conduction loss optimized

WBG semiconductors

Induction cooking

USB-C controllers
and peripherals

Applications

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261

TRENCHSTOP™ and RC-Drives
600 V/650 V product family together with 650 V SOI gate driver family
TO-263(D2PAK)

TO-220TO-247
advancedisolation

TO-220
FullPAKTO-247PLUS/
Super 247
(TO-247AA)

SOT-223

IGP06N60T10

IGB10N60T

IGP10N60T

15

IGB15N60T

IGP15N60T

IGB30N60T30

IGW30N60T
Gate-driver ICs

IGD06N60T

500-950 V MOSFETs

IGU04N60T

40
IGB50N60T

50

IGP50N60T

IGW50N60T

75

IGW75N60T

1

IKN01N60RC2

3

IKN03N60RC2

4

IKD04N60RC2
IKD04N60R

6

IKD06N60RC2
IKD06N60R

IKB06N60T

IKP06N60T

IKA06N60T

IKN06N60RC210

IKD10N60RC2
IKD10N60R

IKB10N60T

IKP10N60T

IKA10N60T

IKN10N60RC215

IKD15N60RC2
IKD15N60R

IKB15N60T

IKP15N60T

IKA15N60T

IKB20N60T

IKP20N60T

20

IKP04N60T

IKN04N60RC2IKW20N60T
IKW30N60T

Intelligent powerswitches and modules

30
40
50

IKFW50N60ETIKW50N60T

75

IKFW75N60ET

IKW75N60T
IKQ100N60T

120

IKQ120N60T

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

100

Sensors

IGBT and diodeTO-247

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SupportSingle IGBT

6

TO-252(DPAK)

Digital isolators

4TO-251(IPAK)IGBT discretes andsilicon power diodes

Continuous
collector current
at Tc=100°C[A]

15-300 V MOSFETs

Applications

Solutions

Discrete IGBTs product portfolio

262

Applications

Solutions

Discrete IGBTs product portfolio

TRENCHSTOP™ IGBT7 S71200 V product family together with isolated driver and 1200 V level-shift driver family
TO-247

TO-247PLUS 3-pin

DPAK

IKZA40N120CS775

IGQ75N120S7

100

IGQ100N120S7

120

IGQ120N120S7
IGB03N120S7*

IGD03N120S7*

8

IKW08N120CS7

IGB08N120S7*

IGD08N120S7*15

IKW15N120CS7

IGB15N120S7*25

IKW25N120CS740

IKW40N120CS750

IKW50N120CS7
IKQ75N120CS7

100

IKQ100N120CS7

120

IKQ120N120CS7
Digital isolators

75

Gate-driver ICs

3

DuoPack

D2PAK

500-950 V MOSFETs

Single IGBT40

TO-247 4-pin

15-300 V MOSFETs

Continuous
collector current
at Tc=100°C[A]

TRENCHSTOP™ IGBT7 T720

IKW20N65ET730

IKW30N65ET740

IKW40N65ET750

IKW50N65ET775

IKW75N65ET7Intelligent powerswitches and modules

TO-247-3

Microcontrollers

DuoPack

Continuous
collector current
at Tc=100°C[A]

IGBT discretes andsilicon power diodes

Together with isolated driver, 650 V SOI driver, and low-side driver family

TRENCHSTOP™ IGBT7 H71200 V product family together with isolated driver and 1200 V level-shift driver family
TO-247 4-pin assymetricTO-247PLUS 3-pin

TO-247PLUS 4-pin

IKW40N120CH7IKZA40N120CH750

IKW50N120CH7IKZA50N120CH7IKQ50N120CH7

IKY50N120CH775

IKW75N120CH7IKZA75N120CH7

IKQ75N120CH7

IKY75N120CH7

100

IKQ100N120CH7

IKY100N120CH7

120

IKQ120N120CH7

IKY120N120CH7140

IKQ140N120CH7

IKY140N120CH7

Sensors

WBG semiconductors

40

USB-C controllers
and peripherals

TO247-3Powermanagement ICs

Continuous
collector current
at Tc=100°C[A]

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263

Applications

Solutions

Discrete IGBTs product portfolio

Reverse Conducting IGBTs
TO-247
advanced isolation

TO-247650 V

1100 V

1200 V1350 V

IHW20N65R5*20

1400 V

15-300 V MOSFETs

Continuous
collector current
at Tc=100°C[A]

1600 V

IHW20N140R5L
IHW20N120R5IHW20N135R5IHW30N120R5IHW30N135R5IHW30N140R5L

IHW40N120R5IHW40N135R5IHW40N140R5L

IHW25N140R5L
IHW30N65R6
IHW30N65R530
IHFW40N65R5S

40

IHW30N110R5IHW40N65R6
IHW40N65R5

500-950 V MOSFETs25

IHW30N160R5

Gate-driver ICs

IHW50N65R6
IHW50N65R550

600 V HighSpeed 3 H3TO-247
advanced isolation

IGB20N60H3

IGP20N60H3

IGW20N60H330

IGB30N60H3

IGP30N60H3

IGW30N60H340

IGW40N60H350

IGW50N60H360

IGW60N60H375

IGW75N60H3

20

IGBT discretes andsilicon power diodes

20

100

IGW100N60H3
IKB20N60H3

IKP20N60H3

IKW20N60H330

DuoPack

TO-247IKW30N60H3

40

IKFW40N60DH3E

IKW40N60H3

50

IKFW50N60DH3E
IKFW50N60DH3

IKW50N60H3

60

IKFW60N60DH3E
IKFW60N60EH3

IKW60N60H3

75

Microcontrollers

IGBT

TO-220Intelligent powerswitches and modules

TO-263(D2PAK)

Continuous
collector current
at Tc=100°C[A]

Digital isolators

Together with isolated driver, 650 V SOI driver, and low-side driver family

IKW75N60H3IKFW90N60EH3

USB-C controllers
and peripherals

90

TRENCHSTOP™ 5 H5+ „half“ rated diode
TRENCHSTOP™ 5 S5+ „full“ rated diodeTO-247 3-pin

TO-247-4pin

40

IKW40N65RH5

IKZA40N65RH550

IKW50N65RH5

IKZA50N65RH575

IKW75N65RH5

IKZA75N65RH550

IKW50N65SS5

IKZA50N65SS575

IKW75N65SS5

IKZA75N65SS5

WBG semiconductors

DuoPack

Continuous
collector current
at Tc=100°C
[A]

Power
management ICs

CoolSiC™ hybrid discrete

Sensors

For the CoolSiC™ MOSFET portfolio and our broad WBG offering, please check the Wide bandgap semiconductors chapter.

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www.infineon.com/igbtdiscretes

264Solutions

Discrete IGBTs product portfolio

Applications

TRENCHSTOP™ 5 F5, H5, and S5Together with isolated driver, 650 V SOI driver, and low-side driver family

IGP20N65F5/IGP20N65H5
IGP30N65F5/IGP30N65H5
IGP40N65F5/IGP40N65H5

IGW40N65F5/IGW40N65H5
IGW50N65F5/IGW50N65H5 IGZ50N65H5

IGB50N60S5
IGW75N65H5

75

15
20
28
30

DuoPack

39
40

500-950 V MOSFETs

IGB50N60H5

IGZ75N65H5
IGZ100N65H5100
815-300 V MOSFETs

IGB20N65S5

IKP08N65F5/IKP08N65H5

IKA08N65F5/IKA08N65H5
IKA15N65F5/IKA15N65H5IKB15N65EH5

IKP15N65F5/IKP15N65H5IKB20N65EH5

IKP20N65H5/IKP20N65F5IKB30N65EH5

IKP30N65H5/IKP30N65F5

Gate-driver ICs

IGBT

50

TO-2474-pin

TO-247

IGB15N65S5

30
40

TO-220
FullPAKIKP28N65ES5
IKW30N65H5IKB30N65ES5

IKW30N65ES5
IKP39N65ES5IKB40N65ES5

IKP40N65F5/IKP40N65H5 IKFW40N65DH5IKW40N65F5/IKW40N65H5IKB40N65EH5

Digital isolators

20

TO-247
advanced isolation

TO-220IKW40N65ES5IKB40N65EF5
IKFW50N65ES5

IKW50N65F5/IKW50N65H5 IKZ50N65EH550

IKFW50N65DH5
IKFW50N65EH5

IKW50N65EH5
IKW50N65ES5

IKZ50N65ES5

60

IKFW60N65ES5
IKFW75N65ES5IKW75N65EH5

IKZ75N65EH5

IKFW75N65EH5

IKW75N65ES5

75

IGBT discretes andsilicon power diodes

15

TO-263(D2PAK)IKFW90N65ES5

90

TRENCHSTOP™ 5 L5 low VCE(sat)650 V product family together with low-side driver family
TO-251(IPAK)

TO-252(DPAK)

TO-263(D2PAK)

TO-220TO-262(I²PAK)

TO-220
FullPAKTO-24730

IKW30N65EL575

IKW75N65EL5IKZ75N75EL5
USB-C controllers
and peripherals

lGW30N65L5

DuoPack

IGBT 30

TO-2474-pin

Microcontrollers

Continuous
collector current
at Tc=100°C[A]

TRENCHSTOP™ 5 WR5/WR6
650 V product family together with low-side driver family
TO-247IKWH20N65WR6
IKW30N65WR5

IKWH30N65WR5/IKWH30N65WR640

IKW40N65WR5

IKWH40N65WR650

IKW50N65WR5

IKWH50N65WR6
IKWH60N65WR6

70

IKWH70N65WR6

Sensors

60

WBG semiconductors

30

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SupportDuoPack

20

TO-247 HCC
Power
management ICs

Continuous
collector current
at Tc=100°C[A]

Intelligent powerswitches and modules

Continuous
collector current
at Tc=100°C
[A]

265

Applications

Solutions

Silicon power diodes

Silicon power diodes

15-300 V MOSFETs

Discrete Emitter controlled 7 silicon diodes

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

Emitter Controlled (EC) 7 is Infineon’s latest single-packed standalone diode in a discrete TO247 2-lead package.
The EC7 diode technology has been developed in two different voltage classes for specific reasons‒ 650 V to enhance softness (as indicated in the diagram below), compared to previous generations of discrete diodes
such as EC3, Rapid 1, and Rapid 2‒ 1200 V, Infineon introduces a Power Diode in a discrete TO247 Package for the first time, offering an alternative towide-bandgap silicon carbide diodes

USB-C controllers
and peripherals

Microcontrollers

The EC7 Families also offer enhanced reliability through the TO247-2 package, reducing discharge-related failuremodes. Their unique high current ratings (up to 150 A) increase power density in the discrete package, enablingsmaller and lighter designs. These diodes are qualified for industrial applications according to the relevant tests of
JEDEC47/20/22. A standout feature unique to the EC7 is its HV-H3TRB robustness, ensuring higher system reliability inchallenging operating conditions.

Sensors

WBG semiconductors

Powermanagement ICs

Diode dynamic waveforms at 30 A, 10 Ω, 100 °C

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www.infineon.com/igbtdiscretes

266Solutions

Silicon power diodes

Applications

Rapid 1 diodes
650 V product familyContinuous
current IF
at TC=100°C[A]

TO-220
FullPAK8

IDP08E65D1

15

IDP15E65D1

TO-247

TO-247common cathodeTO-247
advanced isolation
15-300 V MOSFETs

TO-220

IDV20E65D130

IDP30E65D1

IDW30E65D140

IDW30C65D1

IDW40E65D1

500-950 V MOSFETs

20

IDFW40E65D1E
IDW60C65D175

IDW75D65D180

IDW80C65D1

IDFW60C65D1
IDFW80C65D1

Gate-driver ICs

60

Rapid 2 diodes
650 V product family

8

IDP08E65D2

IDV08E65D2

15

IDP15E65D2

IDV15E65D2

20

IDP20E65D230

IDP30E65D240

IDP40E65D2

TO-220common cathodeTO-247

IDW15E65D2
IDP20C65D2

IDV30E65D2

TO-247common cathode

Digital isolators

TO-220
FullPAK

TO-220IDW20C65D2

IDP30C65D2

IGBT discretes andsilicon power diodes

Continuous
current IF
at TC=100°C[A]

IDW30C65D2
IDW40E65D2Intelligent powerswitches and modules

IDW80C65D2

80

Emitter controlled diodes
600 V and 1200 V product families

IDW30E60

50

IDW50E60

75

IDW75E60
IDW100E60

12

IDP12E120

18

IDP18E120
IDB30E120

IDP30E120

Power
management ICs

30

Microcontrollers

301001200 V

TO-247

USB-C controllers
and peripherals

600 V

TO-220Real 2-pin

TO-263(D2PAK)

Continuous
current IF
at TC=100°C[A]

Emitter controlled 7 diodes
650 V and 1200 V product families

1200 VIDWD20E65E730

IDWD30E65E7

40

IDWD40E65E750

IDWD50E65E7

60

IDWD60E65E7

75

IDWD75E65E7100

IDWD100E65E7120

IDWD120E65E7

150

IDWD150E65E730

IDWD30E120D740

IDWD40E120D750

IDWD50E120D7

60

IDWD60E120D775

IDWD75E120D7100

IDWD100E120D7120IDWD120E120D7140

IDWD140E120D7

Sensors

20

WBG semiconductors

TO-247-2pin

Support

650 V

Continuous
current IF
at TC=100°C[A]

Click here to learn more:
www.infineon.com/gatedriver
www.infineon.com/igbtdiscretes

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267

Applications

Solutions

IGBT nomenclature

Nomenclature

Company
I = Infineon
S = Formerly Siemens

65

E

L5

E

Nominal current[A] @ 100°C[A] Equivalent collector current for Advanced Isolation

Digital isolators

Optimization
CP2 = EDT2™ series
E1 = Reverse conducting E-series
F5 = TRENCHSTOP™ 5 ultra fast
H3 = HighSpeed 3
H5 = TRENCHSTOP™5 fast
H6 = 1200 V TRENCHSTOP™ IGBT6
H7 = TRENCHSTOP™ IGBT7 H7
IPD = Integrated Power Device Protect
L5 = TRENCHSTOP™ 5 low VCE(sat)R = Reverse conducting Drives (RC-D)
R3 = Reverse conducting R3 series
R5 = Reverse conducting R5 series
R5L = Reverse Conduting R5L series
R6 = Reverse conducting R6 series
RC2 = Reverse conducting Drives Gen2
RF = Reverse conducting Drives Fast
S5 = TRENCHSTOP™ 5 medium speed
S6 = 1200 V TRENCHSTOP™ IGBT6
S7 = 1200 V TRENCHSTOP™ IGBT7
T = TRENCHSTOP™
T2 = TRENCHSTOP™ 2
T6 = 650 V TRENCHSTOP™ IGBT6
T7 = TRENCHSTOP™ IGBT7
TP = TRENCHSTOP™ Performance
WR5 = TRENCHSTOP™ 5 WR5WR6 = TRENCHSTOP™ 5 WR6IGBT discretes andsilicon power diodes

Package type
A = TO-220-3 FullPAK
B = TO-263-3 (D2PAK)
D = TO-252-3 (DPAK)
N = SOT-223
P = TO-220-3
Q = TO-247PLUS
QB = TO-247PLUS 3-pin SMD
U = TO-251-3 (IPAK)
W = TO-247-3
Y = TO-247PLUS 4-pin
Z = TO-247-4
FW = TO-247-3 advanced isolation
WH =TO-247-3 high creepage
WS = TO-247 6-pin
ZA = TO-247 4-pin asymmetricGate-driver ICs

E = replacement for TO-247 withmedium performance insulator or FullPAK
Blank = best in class, replacement for
TO-247 with high performance insulatoror FullPAK

DeviceE = Enhanced
G = Single IGBT
H = Reverse conducting
K = DuoPack

Technology
N = N-channel
P = P-channelN500-950 V MOSFETs

75

Intelligent powerswitches and modules

W

Microcontrollers

K

Diode (for DuoPack only)
B = Emitter controlled 1200 V half rated diodeC = Emitter controlled 1200 V full rated diodeD = Rapid 1 650 V half rated diodeE = Rapid 1 650 V full rated diodeR = CoolSiC™ 650 V half rated diodeS = CoolSiC™ 650 V full rated diodeUSB-C controllers
and peripheralsI15-300 V MOSFETs

IGBT (after 03/2013)

Sensors

WBG semiconductors

Powermanagement ICs

Nominal voltage
Divided by 10 (650 V/10 = 65)

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Applications

Solutions

IGBT nomenclature

DeviceK = IGBT + diode (normal drives)
H = Optimized for soft
switching applications(e.g. induction heating)
G = Single IGBT
D = DiodePackage type
A = TO-220 FullPAK
B = TO-263 (D2PAK)
D = TO-252 (DPAK)
P = TO-220
U = TO-251 (IPAK)
W = TO-247

N

120

H

3

500-950 V MOSFETs

Company
I = Infineon
S = Formerly Siemens

40

Generation
Specification– = Fast IGBT (~20 kHz)Hχ = HighSpeed generation(600 V - 1200 V)
Tχ = TRENCHSTOP™ generation(600 V IGBT 3) (1200 V IGBT 4)
Rχ = Reverse conducting
RF = Reverse conducting fast
F = HighSpeed FAST 5
Rχ = Rapid diode generation

Gate-driver ICs

W

Digital isolators

K

Nominal voltage
Divided by 10 (1200 V/10 = 120)
Technology
N = N-channel
T = TRENCHSTOPTM
E = Emitter-controlled diodes(for diode only)

IGBT discretes andsilicon power diodes

I

15-300 V MOSFETs

IGBT (before 03/2013)

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

Nominal current(@ 100°C) [A]Click here to learn more:
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Applications

Solutions

Silicon power diodes
nomenclature

15-300 V MOSFETs

Nomenclature
Silicon power diodes

Company
I = Infineon

E

65

D1

E*

500-950 V MOSFETs

75

E = Replacement for
TO-247 with medium
performance insulatoror FullPAK

DeviceD = Diode

Optimization
Blank = Emitter Controlled
D1 = Rapid 1
D2 = Rapid 2

Package type
B = TO-263 3-pin
D = TO-252 3-pin
P = TO-220 2-pin/3-pin
V = TO-247 3-pin
W = TO-247 3-pin
FW = TO-247 3-pin advanced isolation

Gate-driver ICs

W

Nominal voltage
Divided by 10 (650 V/10 = 65)
Technology
C = Common CathodeD = Dual AnodeE = Std. configuration

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

Current- Nominal current @ 100°C [A]- Equivalent collector current for advanced isolation

Digital isolators

D

IGBT discretes andsilicon power diodes

I

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Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules
USB-C controllers
and peripherals

Microcontrollers

Infineon support for discrete IGBTs
and silicon power diodes
Useful links and helpful informationwww.infineon.com/ultrasoftdiodes
www.infineon.com/discrete-automotive-igbt
www.infineon.com/latest-discrete-packages

WBG semiconductors

www.infineon.com/igbt
www.infineon.com/igbtdiscretes
www.infineon.com/rapiddiodes
www.infineon.com/discreteIGBT7

Power
management ICs

Further information, datasheets and documents

Sensors

Evaluationboards and simulation models
www.infineon.com/eval-TO-247-4pin
www.infineon.com/igbtdiscrete-simulationmodels

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www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

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www.infineon.com/xxxxxxx

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Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules
Microcontrollers
USB-C controllers
and peripherals
Powermanagement ICs
Sensors‒ CIPOS™ IPM family‒ iMOTION™ IPM‒ ISOFACE™ isolated industrial interface‒ Industrial PROFET™
‒ HITFET™
‒ CIPOS™, iMOTION™, ISOFACE™, industrial PROFET™ and HITFET™ product portfolio

WBG semiconductors

Intelligent power switches and modules

www.infineon.com/smps
www.infineon.com/xxxxxxx

www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

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Intelligent power modules

Applications

CIPOS™ IPM family

15-300 V MOSFETs

CIPOS™ intelligent power modules in different packages,
voltage and current classes

500-950 V MOSFETs

Infineon has a broad portfolio of intelligent power modules (IPMs) with different semiconductors combined invarious packages in varying voltage and current classes. These IPMs are separated into Compact, Standard, andPerformance families.

Gate-driver ICs

Part of the IPMs is divided into CIPOS™ Nano, CIPOS ™ Micro, CIPOS ™ Mini, and CIPOS™ Maxi families. CIPOS™ IPMs
are families of highly integrated, compact power modules designed to drive motors in applications ranging from home
appliances, fans, pumps, HVAC to industrial drives. These energy-efficient intelligent power modules integrate thelatest power semiconductor and ICs technologies from Infineon.

CIPOS™ MicroCIPOS™ MiniCIPOS™ Maxi

MOSFET
100/250/500/600 V

IGBT: 600 V, 2/4/6 A

IGBT: 600 V, 4-30 A
MOSFET: 600 V

IGBT: 1200 V, 5/10/15 A
CoolSiC™ MOSFET:
1200 V, 20 A

29 x 12 x 2.9 mm

36 x 21 x 3.1 mm

36 x 23 x 3.1 mm

Compact IPM

Standard IPM

Motor current

Performance IPM

30 Apeak
USB-C controllers
and peripherals

0.1 Apeak

Microcontrollers

7 x 8 x 0.9 mm
8 x 9 x 0.9 mm
12 x 10 x 0.9 mm
12 x 12 x 0.9 mm

Intelligent powerswitches and modules

CIPOS™ Nano

IGBT discretes andsilicon power diodes

Digital isolators

CIPOS™ product overview

Key benefits

Sensors

WBG semiconductors

Powermanagement ICs‒ Fast time-to-market‒ Increased reliability‒ Reduced system design complexity‒ Improved manufacturability

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Intelligent power modules

Applications

CIPOS™ Nano

15-300 V MOSFETs

Smallest IPM in the world with various topology and voltage options

500-950 V MOSFETs

The ultra-compact CIPOS™ Nano is a family of highly integrated power modules for high-efficiency consumer and lightindustrial applications. CIPOS™ Nano is designed for the rectifier, converter, and inverter stage in power management
circuits and motor drives for applications like fans, hair dryers, air purifiers, and circulation pumps. By implementing
an innovative Power QFN package, which utilizes PCB copper traces to dissipate heat from the module, CIPOS™ Nanofamily delivers a new benchmark in device size, offering up to a 60 percent smaller footprint than existing three-phasemotor control power IPMs.

Gate-driver ICs

The family is comprised of a series of fully integrated three-phase, half-bridge, and H-bridge surface-mount motor
control circuit solutions. The new alternative approach utilizes PCB copper traces to dissipate heat from the module,
providing cost savings through a smaller package design and even eliminating the need for an external heat sink.

Key benefits

Key advantages– Various switch technologies such as HEXFETs, Trench FREDFETs,– Smallest modules in the market– Multiple package platforms with various topologies to suitable for a variety of– Cost savings from smaller footprint and reduced PCB space– Integrated bootstrap functionality and gate drivers– Realize a variety of protection (overcurrent protection, under-voltage lockout,– Easy implementation of two- or three-phase motor drives– Half bridge configuration enables more flexible board design w/better– Accessible for heat sink-less operation– Same PCB footprint to address multiple application markets

Trench MOSFETs, CoolMOS™ and OptiMOS™ apply to motor drivers
application scenarios

over-temperature protection, fault reporting and etc.)

IGBT discretes andsilicon power diodes

Digital isolators

Features and benefits

thermal performanceIntelligent powerswitches and modules(100 VAC – 230 VAC)

USB-C controllers
and peripherals

Microcontrollers

Key applications‒ Hair dryer‒ Fan motor‒ Pump‒ Air conditioner Indoor Unit
‒ Air purifiers‒ Small kitchen appliances

QFN 8x9
8 x 9 x 0.9 mm

QFN 12x10
12 x 10 x 0.9 mm

QFN 12x1212 x 12 x 0.9 mm

Sensors

WBG semiconductors

QFN 7x8
7 x 8 x 0.9 mm

Powermanagement ICs

Package overview

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Intelligent power modules

Applications

CIPOS™ Micro

15-300 V MOSFETs

Solution for low power motor drive applications

Gate-driver ICs

500-950 V MOSFETs

CIPOS™ Micro is a family of compact, three-phase IPMs (intelligent power modules) for low-power (i.e., up to 500 W
with heatsink) motor drive applications, including ventilation fans, circulation pumps, air purifiers, dish washer, andrefrigerator compressor drives. CIPOS™ Micro has several protection features, including precise overcurrent protection
and a UL-certified temperature sensor. Available in both surface mount and through-hole configurations, the family
features rugged and efficient high voltage IGBTs specially optimized for variable frequency drives with a 600 V rating.
Also, these IPMs utilize high-voltage gate drivers tuned to achieve an optimal balance between EMI and switchinglosses.

Key features

Key benefits– Wide range of product coverage– Optimized dv/dt for loss and EMI trade offs
– HV H3TRB qualified– Compatible with mass-market TO-2xx heat sinks and clips– Power capability up to 500 W at isolation 2000 VRMS, 1 min– Save system space and cost through the enhanced power capability– Offer application-optimized solution for both fast switching and low EMI version– Improve system ruggedness thru enhanced protection features and isolation

Digital isolators

Features and benefits

IGBT discretes andsilicon power diodes

voltage

Microcontrollers

Intelligent powerswitches and modules

Key applications‒ RAC outdoor fan‒ Dish washer‒ Fan motor and pump
‒ Washing machine‒ Refrigerator‒ General purpose drive

Package overview

USB-C controllers
and peripherals

SOP 29x12
29 x 12 x 3.1 mm

Sensors

WBG semiconductors

Powermanagement ICs

DIP 29x12
29 x 12 x 3.1 mm

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Intelligent power modules

Applications

CIPOS™ Mini

Infineon’s TRENCHSTOP™ IGBTs and reverse-conducting IGBTs are combined with newly optimized Infineon SOI gate
driver IC for excellent electrical performance. Also, CIPOS™ Mini family offers IPMs with DCB substrates, improving heatdissipation to provide higher power capability.

Key features

Key benefits– Wide range of current rating: 4 to 30 A
– High integration (bootstrap circuit, thermistor, single boost PFC)
– Optimized for target application requirements (separate version for washing– Lower PCB size and system cost
– Easy power extension from 300 W to 3 kW
– Optimized performance for each application

Intelligent powerswitches and modules

machine and air conditioner)

IGBT discretes andsilicon power diodes

Features and benefits– UL-certified package and temperature sensor

USB-C controllers
and peripherals

Microcontrollers

Key applications‒ Refrigerator‒ Washing machine‒ Room air conditioning‒ Fans and pumps‒ HVAC outdoor fan‒ General purpose drives

Powermanagement ICs

Package overview
DIP 36x21D
36 x 21 x 3.1 mm

Sensors

WBG semiconductors

DIP 36x21
36 x 21 x 3.1 mm

Gate-driver ICs

The configurations offered within the CIPOS™ Mini family are IGBT three-phase inverter, integrated PFC, and two-phaseand three-phase interleaved PFC. All options include an integrated gate driver and a built-in temperature sensor.
CIPOS™ Mini provides optimized performance for power applications, which need good thermal conduction andelectrical isolation, but also EMI-safe control, innovative FAULT indication, and overload protection.

Digital isolators

CIPOS™ Mini is a family of highly efficient intelligent power modules that has the highest power density with 4 A to
30 A rated products built into a single package platform. It integrates various power and control components toincrease reliability, and optimize PCB size and system costs. Utilizing multiple configurations, CIPOS™ Mini IPMs
apply to a wide range of applications to control variable speed drives, such as air conditioners, washing machines,
refrigerators, vacuum cleaners, compressors, and industrial drives up to 3 kW.

500-950 V MOSFETs

15-300 V MOSFETs

Broad range of configurations from PFC to inverter

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Intelligent power modules

Applications

CIPOS™ Maxi

15-300 V MOSFETs

Smallest package in 1200 V IPM class while still offering high power densityand best performance

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

The high-performance CIPOS™ Maxi intelligent power modules (IPMs) integrate various switching devices and control
components to increase reliability, optimize PCB size and system costs. CIPOS™ Maxi IPMs are designed to control
three-phase AC motors and permanent magnet motors in variable speed drive applications such as low-powerindustrial motor drives, pumps, fan drives, and active filters for HVAC (heating, ventilation, and air conditioning). The
product concept is specially adapted to power applications, which need excellent thermal performance and electricalisolation as well as meeting EMI requirements and overload protection.
The existing IGBT 4 -based portfolio IM818 series offers 5 A , 10 A and 15 A in 1200 V class up to 3.0 kW power rating,while the newly IGBT 7 -based IM12BxxxC1 series offers 10 A, 15 A, and 20 A to extend the power rating up to 4.0 kW.
IM828 series offers superior efficiency up to 99 percent and optimal reliability up to 4.8 kW power rating through the 6revolutionary CoolSiC™ MOSFETs with an optimized 1200 V 6-channel SOI gate driver. IM828 series provides the
exceptional power density with a wide switching speed range up to 80 kHz to adapt to fast-switching applications
with superior lower power losses.

Key benefits

Key advantages– Fully isolated dual in-line molded module with DCB– 1200 V TRENCHSTOP™ IGBT 4, IGBT 7– 1200 V CoolSiC™ MOSFET– Rugged 1200 V SOI gate driver technology– Integrated booststrap functionality– Overcurrent shutdown– Undervoltage lockout at all channels– All of six switches turn-off during protection– Cross-conduction prevention– Independent NTC for temperature monitoring– Allowable negative VS potential up to -11 V for signal transmission at VBS of 15 V
– Low side emitter pins accessible for all phase current monitoring (open emitter)– Programmable fault clear timing– Enable input– The smallest package size in 1200 V IPM class with high power density and best
performance

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules– Enhanced robustness of gate driver technology for excellent protection– High efficiency– Adapted to high switching application with lower power loss
– Simplified design and manufacturing– Time-to-market

IGBT discretes andsilicon power diodes

Features and benefits

Key applications

WBG semiconductors

Powermanagement ICs‒ Fan and pump
‒ HVAC outdoor fan‒ Heat pump
‒ Low-power general purpose drives (GPI, servo drive)‒ Active filter (active power factor correction) for HVAC
Package overview

Sensors

DIP36x23D
36 x 22.7 x 3.1 mm

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iMOTION™ IPM

Applications

iMOTION™ IPM

15-300 V MOSFETs

Fully integrated iMOTION™ IPM for BLDC motor control

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

iMOTION™ IPM is a family of fully integrated modules for the control of three-phase motors, optimized for low-powerdevices. Within the iMOTION™ IPM family, there are two different series: The IMM100 and IMI110, which combine themotor controller IC and a three-phase inverter stage in a single package, minimizing external components count and
PCB area. The three-phase inverter stage is based either on six MOSFETs or six IGBTs. These iMOTION™ IPMs offer thehighest integration level by making use of the field-proven iMOTION™ Motion Control Engine (MCE) in combination
with providing all required hardware functions: From single shunt current sensing to bootstrap capability, signal
filtering and several hardware protections like dead-time insertion and shoot through prevention. An iMOTION™ IPM
does not require a heatsink and addresses motor drives with a rated output power between 30 W and 80W with 600 V
maximum DC blocking voltage, depending on the chosen product variant. All IMM100 and IMI110 devices support thefunctional safety requirements according to the IEC/UL 60730-1 (“class B”).

Power supply

iMOTION IPM
iMOTION™
MCE

UART

3x HS

· Motor control· Protection· Scripting· Safety

Status LED
Temp Sense
GPIO

3-Phase Power Stage

6x MOSFET or 6x IGBT

IGBT discretes andsilicon power diodes

Gate driver

M
3x LS

hall
(option)analogIntelligent powerswitches and modules

current sense
single / leg shuntposition sensing sensorless / hall

Key benefits

Key advantages– Completely self-sustaining Motion Control Engine with– Fastest time-to-market with easy parametrization and tuning of motor– Up to 80 W without heatsink– Support for IEC 60335-1 (‘Class B’)– Controller, gate driver and power stage in one package– IMI in DSO-22 package with single layer layout option– Applicable for fans and small pumps– Support for functional safety integrated– Minimizing BOM count and PCB area
– Reducing PCB and production costs

identical feature set as the IMC100 series

Microcontrollers

Features and benefits

USB-C controllers
and peripherals

and PFC control

Powermanagement ICs

EVAL-IMM101T-046 is a Starter Kit for iMOTION™ IMM101T-046M IPMs. Together with theiMOTION™ Solution Designer the board can be used for an easy system configuration,
controlling, tuning and monitoring. EVAL-IMM101T-046 enables rapid prototyping of various
inverterized motor control systems, for example fans, pumps and compressors.

Product

Function

Integration

Description

WBG semiconductors

Product portfolio
Package

IMI111T-026H

Motor inverter

MCE incl Scripting, gate driver, IGBT based inverter

Output rating: 600V/2 A, single shunt sensorless operation

PG-DSO-22-1

IMI111T-046H

Motor inverter

MCE incl Scripting, gate driver, IGBT based inverter

Output rating: 600V/4 A, single shunt sensorless operation

IMM101T-046M

Motor inverter

MCE incl Scripting, gate driver, MOSFET based inverter Output rating: 600 V/1.4 Ω RDS(on), single/leg shunt, sensorless/hall

PG-IQFN-38-1

IMM101T-056M

Motor inverter

MCE incl Scripting, gate driver, MOSFET based inverter Output rating: 600 V/0.95 Ω RDS(on), single/leg shunt, sensorless/hall

PG-IQFN-38-2
Sensors

PG-DSO-22-1

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ISOFACE™

Applications

ISOFACE™ isolated industrial interface

15-300 V MOSFETs

Galvanic-isolated output switch and digital input ICs offers unmatched system
uptime, high reliability and up to 50% shortened product launch time

500-950 V MOSFETs

The ISOFACE™ product family provides robust and intelligent galvanic-isolation for various industrial control
applications such as programmable logic controllers, sensor input modules, distributed control systems, control panelsand general control equipment. The output switches are compact in design, enabling robust and reliable operation at
low system cost. The input ICs are equally robust, offers reliable operation in a compact form factor and offers industry
leading superior EMI robustness setting a new standard in diagnostics.

Gate-driver ICs

ISOFACE™ galvanic-isolated 8-channel output switches

V bb

V CC

V CC

IGBT discretes andsilicon power diodes

Isolated output switchesIntelligent powerswitches and modules

Isolated output switch block diagram

Digital isolators

The ISO1H81xG 1) product family integrates:‒ Robust galvanic isolation (UL508 and C22.2 NO14 certified) to protect the 3.3 V/5 V control domain of anindustrial control system from the harsh 24 V process side
‒ 8-channel high-side power-switching capabilities of up to 1.2 A per channel‒ Active current limitation and overtemperature protection‒ Common diagnostic feedback for overtemperature and for Vbb undervoltage

V bb

V CC
Control
unit

Controlandprotection
unit

Microcontrollers

WR
Parallel or
D0serialinterface

Transmission

CS

Microcontroller
i.e.
XMC1xxx
XMC4xxx

OUT0
Transmission

DIS

OUT1

Logic
DIAG

D7

USB-C controllers
and peripherals

DIAG
OUT7

ISO1H81xG

GND BBPower
management ICs

GND CCGND

Key benefits– Integrated galvanic isolation (500 VAC)
– Eight channels (0.6 or 1.2 A, each)– Inductive load switching– Diagnostic feedback (overtemperature, overload)– Serial and parallel MCU interface– Robust and reliable– Compact system solution– Lower system cost
– System status feedback– Directly interfacing with all MPUs and MCUs

Sensors

Key features

WBG semiconductors

Features and benefits

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Solutions

ISOFACE™

The ISO2H823V integrates:

Gate-driver ICs‒ Robust 2.5 kV AC galvanic isolation:– UL508 and CSA C22.2 No.14 certified– Protecting the 3.3 V control domain of an industrial control system fromthe harsh 24 V process side

– Exceeding the IEC 61131-2 requirements for reinforced isolation

Digital isolators‒ 8-channel high-side power-switching capabilities of up to 0.6 A per channel

IGBT discretes andsilicon power diodes

with active current limitation and overtemperature protection‒ 10-fold diagnostic feedback– 5 types of feedback which are available individually for each of the eight
outputs– 5 types of IC-level feedback‒ Common diagnostic feedback for overtemperature and for Vbb undervoltage

Intelligent powerswitches and modules

Typical application
ISO2H823V25

LED matrix

Control
protection
diagnostic
unit

RST

Parallel or SPI
serial interface

IADJ

OUT0

...

CT transfer

Diagnostc ch.1

CT transfer

OUTx
Diagnostc ch.0

Drive ctrl
diagnostics

Diagnostc ch.7
LED matrix

Error register
OSC

GNDBB

USB-C controllers
and peripherals

Drive ctrl
diagnostics

Configuration
registers
Interface logic

Microcontrollere.g.
XMC4xxx

VCORE
VBB

OLADJ

Drive reg.

ERR
ODIS
SYNC
CS
SEL

VDDIO

Resynch

CLKADJ

OUT7
LEDx0
LEDx1
LEDx2
LEDy0
LEDy1
LEDy2

Power
management ICs

Available if
serial modeis selected

PMU
3.3V
1.5V

Microcontrollers

OSC

500-950 V MOSFETs

The ISO2H823V establishes a new standard in diagnostics for industrial control applications. For example, in industrial
plants with capital-intensive single-tool equipment at work or with time-critical chemical processes running, obtaining
in real-time differentiated feedback from the factory floor enables both, preventive maintenance and drastic reductionof the time to fix a problem. This is why the ISO2H823V is a highly desirable system solution. System designers benefit
from the ISO2H823V through short time to market, reduced PCB area and uncompromised product reliability.

15-300 V MOSFETs

Applications

ISOFACE™ galvanic-isolated 8-channel high-side switch with 10-fold diagnostics

WBG semiconductors

GND

Key features

Key benefits– Robust 2.5 kV AC galvanic isolation– Eight channels (up to 0.6 A per channel)– 10-fold diagnostic feedback (over-temperature, overload)– Reliable and UL certified– Small form factor solution– Preventive maintenance and short down-times

Sensors

Features and benefits

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Solutions

ISOFACE™

Applications

ISOFACE™ galvanic-isolated digital input ICs

Galvanic-isolated digital input ICs

500-950 V MOSFETs

Digital input switch block diagram

15-300 V MOSFETs

The UL1577 certified ISO1I81xT digital input IC family is an intelligent system solution offering robust galvanic isolation
between the microcontroller on the “control side” and the 24 V factory floor environment, frequently referred to as the“process side”.

I0H
I0L

ERR
DigitalfilterDeserialize

12 kΩ

IN7

2 kΩ

Sync
CS
Parallelor serial
interface

Digitalfilter

I7H
I7L

Microcontroller
e.g.
XMC1000

Digital isolators

2 kΩ

DC
ENA

Serialize

8 sensors

IN0

VCC

TS
WB

Logic

V FI

Vbb

Gate-driver ICs

SW1 S W2
330 nF

12 kΩ

ISO1I813T

GND

IGBT discretes andsilicon power diodes

GNDBB

GNDFI

– Integrated galvanic isolation (500 Vrms)– Eight channels (IEC type 1/2/3)– Up to 500 kHz sampling speed– Programmable input filters– Channel-resolved diagnostics (wire-break, undervoltage)– Robust and reliable– Compact system solution– High-speed applications– Superior EMI robustness– System status feedback– Valuable maintenance support

Microcontrollers

Key benefits

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Key features

Intelligent powerswitches and modules

Features and benefits

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Solutions

High-side switches

Applications

Industrial PROFET™

15-300 V MOSFETs

Protected high-side switches

Gate
control
circuit

ESD
protection

OUT

ST

Temperature
sensoreGND

Key features

Key benefits– Right fit for digital output modules, motor or robot control, protected swit-– Small system form factor– Outstanding robustness and reliability as required by industrial mission– No/little downtime of system in operation– Thermally optimized products with low RDS(on) to deal with the high ambient– Low heating up of a systemching of decentralized loads like sensors or auxiliary supply
profilestemperatures in applications with limited or even no cooling

USB-C controllers
and peripherals– System cost saving by built-in protection and tailored featureset– Reduced system maintenance efforts by providing optimized diagnostics– Diagnosis and protection for safe system operation– Small and compact design for higher integration and applications withspace constraints

PLC – programmable logic controller digital output modules
Control level

Field level
Protection
diagnosis

Microcontrollerorbus ASIC

SwitchLoad 1

SwitchLoad 2Isolation
Multichannel
switchProtection
diagnosis

Load 3
Load 4

Industrial PROFET™
Protected high-side
switches

Gate-driver ICs
Microcontrollers

Features and benefits

Digital isolators

Logic

IGBT discretes andsilicon power diodes

Current
limiter

PROFET™ as actuators typically address
I/O modules supplying nominal currentsof 2 A or 0.5 A. However, PROFET™
portfolio also provides devices for lowerand higher currents. PROFET™ parts
are suitable for switching resistive,
capacitive and, by featuring high EAS,
inductive loads.
Corresponding PROFET™
evaluation boards areavailable on request.

Powermanagement ICs

IN

Overvoltage
protection

WBG semiconductors

Bias
supervision

Intelligent powerswitches and modules

Key applications‒ Industrial automation‒ Programmable logic controller (PLC)‒ Digital DCS and PC I/O modules‒ Robotics‒ Building and home automation‒ Solar applications‒ Wind energy systems‒ Failsafe systems‒ Smart grid
‒ Motor control and drives‒ Power supplies

VS

Sensors

PROFET™ typical block diagram

500-950 V MOSFETs

Infineon’s market-proven high-side switch Industrial PROFET™ products have been designed to target various industrial
applications that drive all types of resistive, inductive and capacitive loads. Due to their outstanding energy robustness,they are perfectly suitable for switching challenging inductive loads and driving relays. Their main application areas
include high-voltage and (Vsupply up to 60 V) and PWM applications up to 1 kHz. Industrial PROFET™ can be applied to drive
any kind of sensor units, indicators, displays, LEDs, relays, valves, and magnetic actuators or replace electromechanicalrelays, fuses, and discrete circuitry. Industrial PROFET™ products are also perfect for applications with long wiring or any
other kind of inductive loads or applications with space constraints. Failsafe systems do make use of them as well.

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Solutions

Low-side switches

RSTATUS

VehicleCAN bus

Microcontroller

VDD

VDD
ENABLEOUTPUTOUTINOUTPUT (PWM)

STATUSINPUT (feedback)/
OUTPUT (reset)

SRP
GND

GND

CSRP1)

RSRP

Digital isolators

Load
CVDD2)IGBT discretes andsilicon power diodes

IN
VoltageOUT
regulator
5V

Key applications‒ Industrial automation*‒ Programmable logic controller (PLC)**‒ Digital I/O modules‒ Building and home management‒ All kind of solenoid or valve driving‒ Power modules‒ Solar power inverters

BTF3xxxEJIntelligent powerswitches and modules

1) CSRP-GND < 100 pF – maximum permittet parasitic capacitance at the SRP-pin
2) Filter capacitor on supply, recommended 100 nF

Features and benefits
Key features

Key benefits– Low-side switches with integrated protection features– Scalable in RDS(on) ranges from 800 mΩ down to 11 mΩ

– High design flexibility with scalable RDS(on) and package– Driving applications with high switching speed requirements up to 25 kHz– Adjustable slew rate control (BTFxxx and BTT30xxEJ)– Thermal shutdown with auto restart or latch behavior– Status feedback via– Increased input current (HITFET™ +12 V/24 V)– Digital readout via SRP (BTF3050TE)– Via status pin (BTF3xxxEJ)– Easy to design– Choice of packages to match individual application needs

USB-C controllers
and peripherals

Microcontrollers(e.g., valve, solenoid)

Low-side switch shield with BTF3050TE for ArduinoPowermanagement ICs

Featured products: Three BTF3050TE low-side switches of the HITFET™ +12 V family
Combatible with: Microcontroller boards using the Arduino form factor and thecorresponding Infineon’s kits with Arm® powered XMC™ microcontroller
Orderable part number: SHIELDBTF3050TETOBO1

Evaluation board based on BTT3050EJ
Featured products: One single-channel low-side switch of BTT3050EJ a deviceof the HITFET™ +24 family
Combatible with: Can be used as single stand and is also pin-compatible withmicrocontroller boards using the Arduino form factor (e.g., XMC1100 Boot Kit, Arduino Uno)
Orderable part number: BTT3050EJDEMOBOARDTOBO1WBG semiconductors

VBatt

Sensors

Application diagramm example for HITFET™ +Gate-driver ICs

HITFET™ stands for highly-integrated temperature-protected MOSFET. These well-established low-side switches offer
a compelling feature set with protection against overtemperature, short circuit and overload conditions as well as
ESD robustness. The HITFET™ + family is the new generation based on new technology, enabling a significant shrink
compared to the existing Classic HITFET™ portfolio (up to 50 percent shrink). This novel generation consists of standard
and fully-featured protected low-side switches (11 to 125 mΩ) in the TO-252-3 DPAK/TO-252-5 DPAK and TDSO-8
packages. Classic HITFET™ and HITFET™ + devices address a wide range of applications, including resistive, inductive,
and capacitive loads.

500-950 V MOSFETs

Low-side smart protected switches

15-300 V MOSFETs

Applications

HITFET™

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Applications

Solutions

ISOFACE™ product portfolio

15-300 V MOSFETs

ISOFACE™ product portfolio
ISOFACE™ output switches
ISO1H812G

ISO1H815G

ISO1H816G

✓

✓

✓

✓

✓

Max. continuous load current perchannel

0.6 A

0.6 A

0.6 A

1.2 A

1.2 A

0.6 A

Load current increase by using outputs in parallel

✓

✓

✓

✓

✓

✓

Inductive clamping energy perchannel:
1 Joule

✓

✓

✓

✓

✓

150 mJ

Serial/Parallel

SerialParallel

Serial

3.3 V/5 V

3.3 V/5 V

3.3 V/5 V

3.3 V/5 V

3.3 V

✓

✓

✓

✓

✓

2.5 kV AC

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

Overtemperature

✓

✓

✓

✓

✓

Vbb undervoltage

✓

✓

✓

✓

✓

✓

✓

✓

✓

VQFN-70

Isolation voltage: VISO = 500 VAC
UL508 and EN 61131-2 certified
Safety features Active current limitation
Thermal shutdown
Common output disable pin

Package DSO-36 (16x14 mm)✓

Intelligent powerswitches and modules

ISO1H801GAUMA1 ISO1H811GAUMA1 ISO1H812GAUMA1 ISO1H815GAUMA1 ISO1H816GAUMA1 ISO2H823V25XUMA1

Ordering code

Safety features
Diagnostic feedback

IEC type: I, II, III✓✓

Input status LED✓✓

Max. sampling frequency

125 kHz500 kHz

Deglitching filter setting

Hard wired

Software, individual per channel

Synchronous data acquisition–✓

3.3 V/5 V✓✓

Serial and parallel✓✓

500 VAC isolation voltage✓✓

Wire break, channel-specific–✓Vbb undervoltage

✓

✓

–

✓

Support for external Vbb supply
Package TSSOP-48 (8x12.5 mm)✓✓

ISO1I811TXUMA1

ISO1I813TXUMA1

Sensors

WBG semiconductors

Ordering code

USB-C controllers
and peripheralsµC interface

ISO1I813T

Power
management ICs

Input characteristics

ISO1I811T

Microcontrollers

ISOFACE™ digital input IC
Product overview

Gate-driver ICs

Parallel

5V

Digital isolators

Parallel

Microcontroller TypeinterfaceNominal voltages

Diagnostics
feedback

ISO2H823V

500-950 V MOSFETs

ISO1H811G✓

IGBT discretes andsilicon power diodes

Product overview

SwitchISO1H801G

Vbb operational range: 11 V to 35 V

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Solutions

Industrial PROFET™
product portfolio

ITS4040 / ITS4075
ITS4090 / ITS4130

Active & preferred

Active & preferred**

Active & preferred

Active & preferred**

Active & preferred

Max. supply voltage

60 V

60 V

45 V

45 V

45 V

Adj. current limit

3 – 13.2 A

see datasheet

3 – 13.2 A

see datasheet–

Digital diagnosis

✓

✓

✓

✓

✓

Overvoltage lockout

✓

✓

–

–

–

Synchronized discharge functionality

✓

✓

–

–

–

Analog diagnosis

✓

–

–

–

–

Analog current sense

✓

–

–

–

–

Open load in OFF-state

✓

✓

✓

✓

–

Open load in ON-state

–

✓

–

–

–

EAS
[mJ]

Recommended
operating voltage range[V]

IL(SC) (typ)[A]

Diagnosis

Package

ITS4035S-EP-D

135

2.0 …5.0

350 at 2.0 A

8.0 .. 36.0 [ ext. V upto 45V]

3…13.2

Digital and analog

TSDSO-14

ITS6035S-EP-K

135

2.0 … 5.0

350 at 2.0 A

8.0 .. 36.0 [ ext. V upto 60V]

3…13.2

DigitalTSDSO-14
DSO-8

ITS4060S-SJ-N

1

50

3.10

900 at 1.50 A

5.00 … 34.00

17.0

n/a

ISP772T

1

50

2.60

900 at 1.50 A

5.00 … 34.00

17.0

n/a

DSO-8

ITS428L2

1

60

7.00

190 at 7.00 A

4.75 … 41.00

22.0

DigitalTO252-5

ITS4100S-SJ-N

1

70

2.40

870 at 1.00 A

5.00 … 34.00

10.0

n/a

PG-DSO-8

ISP762T

1

70

2.00

870 at 1.00 A

5.00 … 34.00

10.0

n/a

DSO-8

ITS4080S-EP-D

175

see datasheet

300 at 0.5 A

8.0 .. 36.0 [ ext. V up to 45 V]

DigitalTSDSO-14

ITS6080S-EP-D

175

see datasheet

300 at 0.5 A

8.0 .. 36.0 [ ext. V up to 60 V]

DigitalTSDSO-14
SOT-223-4

ITS4200S-ME-O

1

150

1.10

700 at 0.50 A

11.00 … 45.00

1.4

n/a

ITS4141N

1

150

1.10

700 at 0.50 A

12.00 … 45.00

1.4

n/a

SOT-223-4

ITS4200S-ME-P

1

150

2.20

160 at 1.00 A

11.00 … 45.00

3.0

n/a

SOT-223-4

ITS4142N

1

150

2.20

160 at 1.00 A

12.00 … 45.00

3.0

n/a

SOT-223-4

ITS4200S-ME-N

1

160

1.20

500 at 0.50 A

5.00 … 34.00

1.5

n/a

DSO-8

ISP452

1

160

1.20

500 at 0.50 A

5.00 … 34.00

1.5

n/a

SOT-223-4

ITS4200S-SJ-D

1

150

1.70

125 at 1.00 A

6.00 … 52.00

6.5

Digital

DSO-8

ISP752R

1

200

1.70

125 at 1.00 A

6.00 … 52.00

6.5

Digital

DSO-8

ISP752T

1

200

1.70

125 at 1.00 A

6.00 … 52.00

6.5

n/a

DSO-8
DSO-8

ITS4300S-SJ-D

1

250

0.80

800 at 0.30 A

5.00 … 34.00

1.2

Digital

ISP742RI

1

350

0.80

800 at 0.30 A

5.00 … 34.00

1.2

Digital, inverted

DSO-8

ITS41K0S-ME-N

1

1000

0.55

1000 at 0.15 A

4.90 … 60.00

0.9

n/a

SOT-223-4

ITS4140N

1

1000

0.55

1000 at 0.15 A

4.90 … 60.00

0.9

n/a

SOT-223-4

ITS4040D-EP-D

240

2 x 2.00

185 at 2 A

5.00 … 45.00

4.1

DigitalTSDSO-14

ITS5215L

290

2 x 2.00

178 at 3.50 A

5.50 … 40.00

15.0

DigitalDSO-12

ITS4075Q-EP-D

475

4 x 2.00

60 at 2 A

5.00 … 45.00

4.1

DigitalTSDSO-14
TSDSO-14

ITS4090Q-EP-D

490

4 x 0.50

410 at 0.5 A

5.00 … 45.00

1.5

Digital

ITS724G

490

4 x 2.00

120 at 3.30 A

5.50 … 40.00

15.0

DigitalDSO-20ITS4130Q-EP-D

4130

4 x 0.50

380 at 0.5 A

5.00 … 45.00

1.25

DigitalTSDSO-14

ITS716G

4140

4 x 1.00

76 at 2.30 A

5.50 … 40.00

9.0

DigitalDSO-20

ITS711L1

4200

4 x 1.00

150 at 1.90 A

5.00 … 35.00

7.5

DigitalDSO-20ITS42008-SB-D

8200

8 x 0.60

10,000 at 625 mA

11.00 … 45.00

3.0

DigitalDSO-36

ITS4880R

8200

8 x 0.60

10,000 at 625 mA

11.00 … 45.00

3.0

DigitalDSO-36

Digital isolators

Nominal load
current[A]

IGBT discretes andsilicon power diodes

RDS(on)
(typ)
[ mΩ]

Intelligent powerswitches and modules

Number ofchannels

Microcontrollers

Product

15-300 V MOSFETs

ITS4080S-EP-D

500-950 V MOSFETs

ITS4035S-EP-D

Gate-driver ICs

ITS6080S-EP-D

USB-C controllers
and peripherals

StatusITS6035S-EP-K

Power
management ICs

Feature / ProductApplications

Industrial PROFET™ product portfolio

WBG semiconductors

Evaluation board

Sensors‒ ITS4035S-EP-D‒ ITS4080S-EP-D‒ ITS6035S-EP-K‒ ITS6080S-EP-D
Click here to learn more:* Per one channel** Coming soon

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Solutions

HITFET™ and PROFET™ portfolio

Operatingvoltagerange[V]IL(lim)(typ)[A]

IL(lim)_TRIGGER
(typ)
[A]

Diagnosis

Package15-300 V MOSFETs

EAS
[mJ]

HITFET™ +

1

10.7

10

300 at 5 A

up to 28

35

70

Status pin

TO-252-5 (DPAK 5-leg)

BTT3018EJHITFET™ +

1

16

7.0

150

up to 36

45–

Status pin

TDSO-8

BTS3035EJHITFET™ +

1

28

5.00

105 at 5 A

up to 31

20.00–

Status pin

TDSO-8

BTS3035TF

HITFET™ +

1

30

5.00

106 at 5 A

up to 31

20.00

–

–

TO-252-3 (DPAK 3-leg)

BTF3035EJHITFET™ +

1

28

5.00

95 at 5 A

up to 32

14.00

41.00

Status pin

TDSO-8

BTF3050TE

HITFET™ +

1

40

3.00

120 at 3 A

up to 28

8.00

30.00

Through SRP pin

TO-252-5 (DPAK 5-leg)

BTS3050EJHITFET™ +

1

40

4.00

62 at 3 A

up to 31

15.00–

Status pin

TDSO-8

BTS3050TF

HITFET™ +

1

44

4.00

64 at 4 A

up to 31

15.00

–

–

TO-252-3 (DPAK 3-leg)

BTF3050EJHITFET™ +

1

40

4.00

62 at 4 A

up to 32

10.00

29.00

Status pin

TDSO-8

BTS3060TF

HITFET™ +

1

50

3.00

55 at 3 A

up to 35

10.50

–

–

TO-252-3 (DPAK 3-leg)

BTS3080EJHITFET™ +

1

64

3.00

35 at 3 A

up to 31

10.00–

Status pin

TDSO-8

BTS3080TF

HITFET™ +

1

69

3.00

38 at 3 A

up to 31

10.00

–

–

TO-252-3 (DPAK 3-leg)

BTF3080EJHITFET™ +

1

64

3.00

33 at 3 A

up to 32

7.00

18.00

Status pin

TDSO-8

BTS3125EJHITFET™ +

1

100

2.00

30 at 2 A

up to 31

7.00–

Status pin

TDSO-8

BTS3125TF

HITFET™ +

1

108

2.00

24 at 2 A

up to 31

7.00

–

–

TO-252-3 (DPAK 3-leg)

BTF3125EJHITFET™ +

1

100

2.00

23 at 2 A

up to 32

5.00

12.00

Status pin

TDSO-8

BTS3018TC

Classic HITFET™ 1

14

6.00

1900

up to 36

30.00–

Through input pin

TO-263-3-2 (TO-220-3 (SMD))

BTS141TC

Classic HITFET™ 1

25

5.10

4000

up to 36

25.00–

Through input pin

TO-263-3-2 (TO-220-3 (SMD))

BTS3028SDL Classic HITFET™ 1

28

5.00

350

up to 36

18.00–

Through input pin

TO-252-3 (DPAK 3-leg)

BTS3028SDR Classic HITFET™ 1

28

5.00

350

up to 36

18.00–

Through input pin

TO-252-3 (DPAK 3-leg)

BTS133TC

Classic HITFET™ 1

40

3.80

2000

up to 36

21.00–

Through input pin

TO-263-3-2 (TO-220-3 (SMD))

BTS3046SDL Classic HITFET™ 1

46

3.60

140

up to 36

10.00–

Through input pin

TO-252-3 (DPAK 3-leg)

BTS3046SDR Classic HITFET™ 1

46

3.60

140

up to 36

10.00–

Through input pin

TO-252-3 (DPAK 3-leg)

BTS117TC

Classic HITFET™ 1

80

3.50

1000

up to 36

7.00–

Through input pin

TO-263-3-2 (TO-220-3 (SMD))

BTS3104SDL Classic HITFET™ 1

104

2.00

50

up to 36

6.00–

Through input pin

TO-252-3 (DPAK 3-leg)

BTS3104SDR Classic HITFET™ 1

104

2.00

50

up to 36

6.00–

Through input pin

TO-252-3 (DPAK 3-leg)

BTS3408G

Classic HITFET™ 2

480

0.55

800

up to 36

1.00–

Through input pin

DSO-8

BSP75NClassic HITFET™ 1

490

0.70

550

up to 36

1.00–

Through input pin

SOT-223

Gate-driver ICs

500-950 V MOSFETs

BTS3011TE

Digital isolators

Nominalload
current[A]

IGBT discretes andsilicon power diodes

RDS(on)at 25°C[mW]

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

Product type Product family Channels

Applications

HITFET™ product portfolio

Click here to learn more:
www.infineon.com/industrial-profetwww.infineon.com/hitfetwww.infineon.com/shields-for-arduino
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Applications

Solutions

CIPOS™ IPM product portfolio

CIPOS™ IPM product portfolio
RDS(on),max. [Ω]Package

Product nameHalf-bridge

0.021

QFN 7x8

IRSM005-301MH

250

H-bridge

0.063

QFN 12x10

IM111-X3Q1B

Half-bridge

0.15

QFN 8x9

IRSM808-204MH

3-phase inverter

0.45 ~ 2.40

QFN 12x12

IRSM836-044MA
IRSM836-084MA

Half-bridge

0.80/1.70

QFN 8x9

IRSM808-105MH/IRSM807-045MH

3-phase inverter

1.70 ~ 6.00

QFN 12x12

IRSM836-025MA/IRSM836-035MA
IRSM836-045MA
IRSM836-035MB

600

H-bridge

0.28

QFN 12X10

IM111-X6Q1B

1200

3-phase inverter

0.055

DIP 36x23D

IM828-XCC

500

Gate-driver ICs

100

CIPOS™ Nano

CIPOS™ Maxi

Configuration

500-950 V MOSFETs

Voltage [V]Digital isolators

Product family

15-300 V MOSFETs

MOSFET based CIPOS™ IPMs

600

Configuration

Package

Product name

2.0/4.0/6.0

DIP 29x12

IM241-S6T2B/IM241-M6T2B/IM241-L6T2B
IM241-S6T2J/IM241-M6T2J

2.0/4.0/6.0

SOP 29x12

IM241-S6S1B/IM241-M6S1B/IM241-L6S1B
IM241-S6S1J/IM241-M6S1J

PFC integrated

10.0 ~ 20.0

DIP 36x21D

IFCM10S60GD/IFCM10P60GD
IFCM15S60GD/IFCM15P60GD
IM564-X6D

3-phase inverter

4.0 ~ 30.0

DIP 36x21

IGCM04F60GA/IGCM04G60GA/IGCM06F60GA/IGCM06G60GA
IGCM10F60GA/IKCM10H60GA/IKCM10L60GA
IGCM15F60GA/IKCM15L60GA/IKCM15F60GA/IKCM15H60GA
IGCM20F60GA/IKCM20L60GA
IKCM30F60GA
IM523-S6A/IM523-M6A/IM523-L6A/IM523-X6A

15.0 ~ 30.0

DIP 36x21D

IKCM15L60GD/IKCM20L60GD/IKCM30F60GD
IM535-U6D

3-phase interleaved PFC

20.0/30.0

DIP 36x21D

IFCM20T65GD/IFCM30T65GD

2-phase interleaved PFC

30.0

DIP 36x21D

IFCM30T65GD/IFCM30U65GD

3-phase inverter

5.0 ~ 15.0

DIP 36x23D

IM818-SCC/IM818-MCC/IM818-LCC

3-phase inverter

CIPOS™ Micro
600

Rated
current [A]CIPOS™ Mini

650
1200

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

CIPOS™ MaxiIntelligent powerswitches and modules

Voltage [V]Microcontrollers

Product family

IGBT discretes andsilicon power diodes

IGBT based CIPOS™ IPMs

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Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules
Microcontrollers

Infineon support for
intelligent switches and modules

USB-C controllers
and peripherals

Useful links and helpful information
Further information, datasheets and documents

Sensors

WBG semiconductors

Powermanagement ICs

www.infineon.com/isofacewww.infineon.com/hitfetwww.infineon.com/industrial-profetwww.infineon.com/shields-for-arduino

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Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules
Microcontrollers
WBG semiconductors

Powermanagement ICs‒ AURIX™ TC3xx family system architecture‒ AURIX™ starter and application kits
‒ Application example: Industrial robotics‒ Microcontroller PDH partner‒ TRAVEO™ T2G portfolio‒ MOTIX™ 32-bit motor control SoC‒ BLDC Motor Control Shield for Arduino‒ CAN-FD transceivers

Sensors‒ XMC™ microcontrollers‒ XMC™ ecosystem, enablement and partners‒ XMC™ digital power explorer kit‒ XMC™ starter kits
‒ XMC™ peripherals‒ PSoC™ 4 microcontroller‒ PSoC™ 6 microcontroller‒ Automotive PSoC™
‒ AURIX™ - 32-bit microcontrollers‒ AURIX™ TC2xx family system architecture

USB-C controllers
and peripherals

Microcontrollers

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www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

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Solutions

XMC™ microcontrollers

XMC1000 family‒ Arm® Cortex®-M0 up to 48 MHz‒ Peripherals up to 96 MHz‒ One-time event request unit (ERU)‒ VDD: 1.8 to 5.5 V‒ TAmbient: -40°C to 105°C

XMC4000 family‒ Arm® Cortex®-M4 up to 144 MHz‒ Built-in DSP, SFPU
‒ EtherCAT‒ Event request unit (ERU)‒ TAmbient: -40°C to 125°C
XMC7000 family‒ Single or dual core Arm® Cortex®-M7
and Cortex®-M0+‒ Up to 8 MB flash‒ Up to 10x CAN FD and 2x Ethernet‒ TAmbient: -40°C to 125°C

Arm® Cortex®-M
XMC7000

IGBT discretes andsilicon power diodes

XMC4000
XMC1000

Performance

XMC1000
XMC4000

XMC4000

Arm® Cortex®-M0
CPU up to 48 MHz
Flash: 8–200 kB
Package: 16–64 pinsArm® Cortex®-M4F
CPU up to 144 MHz
Flash: 64 kB–2 MBPackage: 48–196 pins

Intelligent powerswitches and modules

XMC7000

XMC1000

XMC7000

Single/Dual Arm® Cortex®-M7
CPU upt to 350 MHz
Flash: 1-8 MB
Package: 100-272 pins

XMC7100/7200

XMC7100/7200

XMC7200

EV-Charging,
TCPWM, CAN-FD
TQFP-144/176,
LFBGA-272

Industrial Drives,
TCPWM, CAN-FD,
up to 125°C Tamb
TQFP-176, LFBGA-272

GB Ethernet,
ADCs with 1Msps,
TCPWM, CAN-FD
TQFP-176, LFBGA-272

XMC4700/4800

XMC4800, XMC4300

XMC4100

XMC4200

Basic control andconnectivity
VQFN-48
LQFP-64

Server power
150 ps HRPWM
LQFP-64/100

XMC1000
Arm® Cortex®-M0
up to 48 MHz core/
96 MHz peripheral
8-200 KB flash
up to 105°C
1.8-5.5 V

XMC1400

XMC1400

Flicker-free,
4-Ch LED, SMPS, connectivity
VQFN-40/64
LQFP-64

SMPS control,
connectivity
VQFN-40/64
LQFP-64

XMC4100/XMC4400
Industrial drives,
Hall and encoder I/F,ΔΣ demodulator,
LQFP-64/100/144
LFBGA-144

XMC1400

Hall and encoder I/F,
MATH co-processor,
CAN
VQFN-40/64
LQFP-64

XMC1100

XMC1200, XMC1300

XMC1300

XMC1300

Basic control andconnectivity
TSSOP-16/38
VQFN-24/40

Flicker-free,
4-Ch LED, SMPS, connectivity
TSSOP-16/28/38
VQFN-24, -40

SMPS control,
connectivity,
TSSOP-16/38
VQFN-24/40

Hall and encoder I/F,
MATH co-processor,
TSSOP-16/38
VQFN-24/40

XMC™ entry

LED lighting

Digital power

Motor control

Powermanagement ICs

XMC4000
Arm® Cortex®-M4F
up to 144 MHz core
64 kB-2 MB flash
up to 125°C

EtherCAT, +drives
MultiCAN - 6 nodes
LQFP-100/144
LFGBGA-196

XMC4500

MultiCAN - 3 nodes,
Ethernet, +drives
ext. memory, SD/MMC
LQFP-100/144
LFBGA-144

XMC1400

WBG semiconductors

Industrial drives,
Hall and encoder I/F,ΔΣ demodulator,
LQFP-100/144
LFBGA-196

USB-C controllers
and peripherals

XMC7100
Basic control &Connectivity
single core at 250MHz
TQFP-100/144

Multi CAN - 2 nodes
VQFN-48/64
LQFP-64

Sensors

XMC7000

Microcontrollers

Integration

Dual ARM® Cortex®-M7
up to 350MHz core,
1MB - 8MB flash,
up to 125°C Tamb
2,7V-5.5V

500-950 V MOSFETs

XMC™ MCU portfolio‒ RAM: 8 kB up to 1 MB
‒ Flash: 16 kB up to 8 MB
‒ Accurate analog mixed-signal
peripherals‒ Fast timer/PWM peripherals‒ Rich communication interfaces‒ 16-pin to 272-pin count packages

Gate-driver ICs

Infineon’s XMC™ 32-bit industrial microcontroller portfolio is designed for efficiency and demanding industrial applications.

Digital isolators

One microcontroller platform – countless solutions

15-300 V MOSFETs

Applications

XMC™

Industrial I/O

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Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators

XMC™ ecosystem, enablement and partners

Intelligent powerswitches and modules

From evaluation to production

Third parties

XMC™ LibDAVE™ Apps

ExamplesGraphicalconfigurable
applicationoriented
softwarecomponents

XMC™ Lib and
DAVE™ Apps
composed tocreate more
complexapplications

Product

DAVE™
USB-C controllers
and peripherals

Professional free-of-charge IDE

XMC™ 32-bit industrial microcontroller portfolio

Powermanagement ICs

Idea

Low-level
driver library/APIs for
peripherals

Microcontrollers

Hand-in-hand with third party tools

WBG semiconductors

Infineon enablement for XMC™ MCUs
ModusToolbox™ Software – www.infineon.com/mtb
Modern and extensible development enviroment supporting awide range of Infineon microcontroller devices
DAVE™ – www.infineon.com/dave
Professional and free-of-charge development platform
XMC™ library for Embedded Coder® – www.infineon.com/matlab
Model-based design from MATLAB® and Simulink® environment,
download free of charge
IEC60730 class B library for XMC™ – www.infineon.com/iec60730
Available for XMC™ industrial microcontrollers free of charge
Microcontroller/Probe™ XMC™ – www.infineon.com/ucprobexmc
Free-of-charge version of microcontroller/Probe™ for XMC™ MCUs
to build user interfaces for visualizing, observing, and control of
the internals of XMC™ MCUs
XMC™ link – www.infineon.com/xmclink
Functional isolated debug probe, based on SEGGER J-Link
technology

IGBT discretes andsilicon power diodes

A comprehensive set of tools, products, components, and services are available for fast and efficient design with
XMC™ microcontrollers.

Sensors

In addition to a rich third party ecosystem and enablement
landscape, which support the entire development cycle from
evaluation to production.
For more click here.

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XMC™ microcontrollers

15-300 V MOSFETs

Applications

Infineon’s XMC™ 32-bit industrial microcontroller portfolio is designed for system cost and efficiency for demanding
industrial applications. It comes with the most advanced peripheral set in the industry. Fast and largely autonomous
peripherals can be configured to support individual needs.
Highlights include analog mixed-signal, timer/PWM, and communication peripherals powered by either an Arm® Cortex®-M0 core (XMC1000 family) or an Arm® Cortex®-M4 core with a floating point unit (XMC4000 family).

✓

XMC14x

64

32

✓

64

48

96

8-64 kB
16 kB

Flash

16-200 kB

RAM

16 kB

Flash

8-200 kB

RAM

16 kB

Flash

32-200 kB

RAM

16 kB

1x

-

-

-

2x

-

VQFN 24/40
TSSOP 16/38

1/2

Up to
12

Up to 3

1x

-

-

✓

2x

-

VQFN 24/40
TSSOP 16/28/38

1/2

Up to
12

Up to 3

1x

1x

✓

✓

2x

-

VQFN 24/40
TSSOP 16/38

1/2

Up to
12

Up to 4

2x

2x

✓

✓

4x

✓

VQFN 40/48/64
LQFP 64

US IC

BCCU

CAN 2.0B-

POS IFUp to
12

500-950 V MOSFETs

CCU8 (4 ch)

CCU4 (4 ch)

Analogcomparators

1/1

Gate-driver ICs

XMC13x

32

Flash
RAM

Package

Digital isolators-

64

Connectivity

Number ofchannels

XMC12x32

MemoryTimer/PWM

ADC12-bit/S&H-

Analog

Peripherals

Frequency

Co-processorArm® Cortex®M0

XMC11x

ClocksSupply voltage range 1.8-5.5 V

144

XMC48x

144

Up
to 2

✓

-

-

-

-

VQFN 48
TQFP 64

2/2

Up to 92 ch 2x

1x

✓

✓

-

4x

2x

✓

-

-

-

-

VQFN 48
TQFP 642/2

142 ch 2x

1x

-

-

-

4x

2x

✓

✓

✓

✓

-

LQFP 100

Up to 18 2 ch 4x

2x

✓

2x

4 ch

4x

2x

✓

✓

-

-

-

TQFP 64
LQFP 100

4/4

Up to 26 2 ch 4x

2x

-

2x

4 ch

4x

Up
to 3

✓

✓

-

✓

✓

LQFP 100/144
LFBGA 144

4/4

Up to 26 2 ch 4x

2x

-

2x

4 ch

6x

6x

✓

✓

-

✓

✓

LQFP 100/144
LFBGA 196

4/4

Up to 26 2 ch 4x

2x

-

2x

4 ch

6x

6x

✓

✓

✓

✓

✓

LQFP 100/144
LFBGA 196Flash

256 kB

RAM

40 kB

Flash

256 kBRAM

128 kB

Flash

256-512 kB 4/4

RAM

80 kB

Flash

512 kB-1
MBRAM

128-160 kB

Flash

1.5-2 MBRAM

276-352 kB

Flash

1-2 MB

RAM

276-352 kB

Ethernet

USB

IGBT discretes andsilicon power diodes

4xIntelligent powerswitches and modules

SDIO/SD/MMC-

EtherCAT®

✓CAN 2.0B

✓

US IC

1x

∑ Demodulator

2 ch 2x

20 kB

CCU4 (4 ch)

Up to 964-128 kB

RAM

Microcontrollers

XMC47x2/2

Flash

Package

USB-C controllers
and peripherals

120

POSIF

XMC45xHRPWM (150 ps)

120

CCU8 (4 ch)

XMC44x144

DAC1 2-bit

XMC43x80

Connectivity

Number ofchannels

XMC42x80

MemoryTimer/PWM

ADC1 2-bit/S&H

Frequency [MHz]Arm® Cortex®-M0

XMC41xAnalogExternal BUS Unit
(EBU)

Temperature range -40°C … 85°C/105°C

Supply voltage range 3.1-3.6 V

4 MB
768 kB-✓

QFP-100, QFP-144,
QFP-176, BGA-272

Flash

8 MB

RAM

1 MB

3

18 ch

15 ch

87 ch

16 ch

up to
11 ch

up to
10

✓

✓

QFP-176, BGA-272

✓

Power
management ICs

up to 8 ✓SDHC (eMMC,
SD, SDIO)

up to
11 ch

Gb Ethernet

8 ch

CAN-FD

63 ch

SCB

12 ch

Package

WBG semiconductors

Flash

Number of
Channels
18 ch

ADC 12bit

32 bit generalpurpose

350

3

MemoryRAM

Connectivity

16 bit generalpurpose

XMC72xx

250

Timer/TCPWM
16 bit motorcontrol

XMC71xxFrequency [MHz]Arm® Cortex®-M7

AnalogEthernet

Temperature range -40°C … 85°C/125°C

Sensors

Supply voltage range 2.7-5.5V
Temperature range -40 ...125°C

Click here to learn more:
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XMC™ 7000 microcontrollers

XMC™ 7000 microcontrollers

15-300 V MOSFETs

High-quality grade MCU platform for industrial applications

500-950 V MOSFETs

The XMC7000 is the latest entry in Infineon’s industrial microcontroller portfolio, equipped with peripherals such as
CAN-FD, TCPWM and Gb Ethernet, which increase flexibility and offer added value. The XMC7000 architecture is built
on a low-power 40-nm process technology and the MCUs offer best-in-class compute performance addressing highend industrial applications.

Digital isolatorsIntelligent powerswitches and modules
Microcontrollers

BGA-272

USB-C controllers
and peripherals‒ Single or dual core Arm® Cortex®-M7 and Cortex®-M0+‒ M7 CPU core Frequency up to 350 MHz‒ Temperature range: Ta = -40 to 125°C‒ Memory Up to 8 MB flash, 1 MB RAM‒ TCPWM timers of 102Ch 16-bit and 16Ch 32-bit‒ Cryptography Engine support‒ Interfaces such as CAN-FD, Gb Ethernet‒ SMIF and SDHC interface supported‒ Extended voltage operating range: 2.7 to 5.5 V‒ Low power modes( LP/deep sleep, hibernate)‒ Read While Write (RWW) flash capability

IGBT discretes andsilicon power diodes

XMC7200
8 MB flash / 1 MB RAM,
350 MHz single/dual core
176 – 272 pin (QFP/BGA)

Power
management ICs

XMC7100/7200
4 MB flash / 768 kB RAM,
250 MHz single/dual core
100 – 272 pin (QFP/BGA)

Gate-driver ICs

The XMC7000 offers both single and dual-core Arm® Cortex®-M7 options, supported by an Arm® Cortex®-M0+ enabling
designers to optimize their end products to meet the dynamic and demanding business conditions of industrial
applications. The advanced peripheral set and robust security features make it attractive to customers, who need ahigh-quality MCU platform. The MCU can operate in harsh environments with a temperature range of -40°C to 125°C,
and it is ideal for power-critical applications based on its low-power modes, which go down to 8 μA. The flexible
XMC7000 comes in four package/pin types with 17-part number variants to meet many design requirements.

QFP-176

Features and benefits

WBG semiconductors

Key benefits

Sensors– Best-in-class computing performance– Low power to support electrification and digitization– Optimal solution for motor control and power conversion applications– Advanced security options– Ability to operate in high ambient environments– XMC7000 is easy to adapt to existing PCB– Different core/memory/package combinations
Click here to learn more:
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XMC™ 7000 microcontrollers

Single Core Arm® Cortex®-M7 (+Arm® Cortex®-M0+), TQFP 100 pins, 2 MB flash

XMC7100-F100K4160AA

Single Core Arm® Cortex®-M7 (+Arm® Cortex®-M0+), TQFP 100 pins, 4 MB flash

XMC7100D-F100K2112AA

Dual Core Arm® Cortex®-M7 (+Arm® Cortex®-M0+), TQFP 100 pins, 2 MB flash

XMC7100D-F100K4160AA

Dual Core Arm® Cortex®-M7 (+Arm® Cortex®-M0+), TQFP 100 pins, 4 MB flash

XMC7100-F144K2112AA

Single Core Arm® Cortex®-M7(+ Arm® Cortex®-M0+), TQFP 144 pins, 2 MB flash
Single Core Arm® Cortex®-M7(+ Arm® Cortex®-M0+), TQFP 144 pins, 4 MB flash
Dual Core Arm® Cortex®-M7 (+Arm® Cortex®-M0+), TQFP 144 pins, 2 MB flash

XMC7100D-F144K4160AA

Dual Core Arm® Cortex®-M7 (+Arm® Cortex®-M0+), TQFP 144 pins, 4 MB flash

XMC7100-F176K4160AA

Single Core Arm® Cortex®-M7(+ Arm® Cortex®-M0+), TQFP 176 pins, 4 MB flash

XMC7100D-F176K4160AA

Dual Core Arm® Cortex®-M7 (+Arm® Cortex®-M0+), TQFP 176 pins, 4 MB flash

XMC7100-E272K4160AA

Single Core Arm® Cortex®-M7(+ Arm® Cortex®-M0+), LBGA 272 pins, 4 MB flash

XMC7100D-E272K4160AA

Dual Core Arm® Cortex®-M7(+ Arm® Cortex®-M0+), LFBGA 272 pins, 4 MB flash

XMC7200-F176K8384AA

Single Core Arm® Cortex®-M7 (+Arm® Cortex®-M0+), TQFP 176 pins, 8 MB flash

XMC7200D-F176K8384AA

Dual Core Arm® Cortex®-M7 (+Arm® Cortex®-M0+), TQFP 176 pins, 8 MB flash

XMC7200-E272K8384AA

Single Core Arm® Cortex®-M7 (+Arm® Cortex®-M0+), LFBGA 272 pins, 8 MB flash

XMC7200D-E272K8384AA

Dual Core Arm® Cortex®-M7 (+Arm® Cortex®-M0+), LFBGA 272 pins, 8 MB flash

IGBT discretes andsilicon power diodes

XMC7100-F144K4160AA
XMC7100D-F144K2112AA

500-950 V MOSFETs

XMC7100-F100K2112AA

Gate-driver ICs

Single Core Arm® Cortex®-M7 (+Arm® Cortex®-M0+), TQFP 100 pins, 1 MB flash
15-300 V MOSFETs

Description

XMC7100-F100K1088AA

Digital isolators

Type

Applications

XMC™ 7000 part numbers

SoftwareMicrocontrollers

Intelligent powerswitches and modules

ModusToolbox™ Software Environment

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

ModusToolbox™ software supports application development using the
XMC7200 evaluation kit by providing board support package (BSP) andvalidated code examples to help you get started. To download the latest
version of the software, please visit the ModusToolbox™ webpage.

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Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes

Key features

Key benefits– Synchronous buck converter evaluation kit controlled with XMC4200 or– Easy entry in digital power control applications– Understand the details of voltage/peak current

XMC1300 Arm® Cortex®-M MCUs

– Onboard resistive load banks– Featuring BSC0924NDI dual n-channel OptiMOS™ MOSFET and IRS2011S
high- and low-side gate driver

USB-C controllers
and peripherals

Features and benefitsIntelligent powerswitches and modules

The new digital power explorer kit is designed with the particular goal of making it easy for engineers to take the first steps
into digital power control with XMC™ microcontrollers. It showcases both XMC™ families Arm® Cortex®-M microcontrollers:
XMC4000 and XMC1000, 30 V dual n-channel OptiMOS™ MOSFETs and IRS2011S gate drivers. The kit includes two different
control card options, XMC1300 control card (Arm® Cortex®-M0) and XMC4200 control card (Arm® Cortex®-M4F), which allow
designers to evaluate both XMC™ microcontroller families and make the right price/performance choice for their application.

Microcontrollers

XMC™ digital power explorer kit

control and how to extract the maximum of XMC™ devices– DAVE™ v4 APPs for buck converter and many
more example

Sensors

WBG semiconductors

Powermanagement ICs– Different control schemes possible– Voltage mode control– Peak current mode control (with slope compensation)

Click here to learn more:
www.infineon.com/aurix
www.infineon.com/motix-mcu

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Solutions

XMC™ power conversion kits

Applications

High power density 800 W 130 kHz platinum server design with XMC1300

500-950 V MOSFETs

15-300 V MOSFETs

The 800 W PFC CCM evaluation board demonstrates design and practical results of an 800 W 130 kHz platinum server
PFC evaluation board based on Infineon devices, in terms of power semiconductors, non-isolated gate drivers, analog
and digital controllers for the PFC converter, as well as flyback controller for the auxiliary supply. This evaluation board
verifies the performance of the latest 600 V CoolMOS™ C7 superjunction MOSFET technology working at 130 kHz in a
PFC CCM boost converter along with EiceDRIVER™ ICs and CoolSiC™ Schottky diode 650 V G5 using digital control.

– High efficient PFC stage with a complete system solution from Infineon– Protections, including cycle-by-cycle current protection– Run time debug with isolated UART to PC interface and PC software– HW and SW available– Higher switching frequency permits higher power density

and current loops

Infineon components

Vin90-265 VAC

MCU

Vout_nom

380 VDCMOSFET

600 V CoolMOS™ C7

Iout

2A

MOSFET driver

EiceDRIVER™ 2EDN7524F non-isolated

PWM frequency

130 kHz

Diode

CoolSiC™ Schottky diode 650 V G5

THD

<10%

Auxiliary PSU

ICE2QR4780Z

Power factor>0.9 from 20% load

Efficiency

97% (peak)

Digital isolators

Specification

XMC1302 (TSSOP38)

IGBT discretes andsilicon power diodes

800 W PFC CCM with XMC1300

600 W half-bridge LLC evaluation board with 600 V CoolMOS™ C7 SJ MOSFET
with digital control

USB-C controllers
and peripherals

The 600 W LLC digital control evaluation board shows how to design the half-bridge LLC stage of a server SMPS with thetarget to meet 80+ Titanium standard efficiency requirements. For this purpose, the latest CoolMOS™ technologies,
600 V CoolMOS™ C7 or P6 superjunction MOSFETs have been used on the primary side and OptiMOS™ low-voltage power
MOSFET in SuperSO8, BSC010N04LS, in the synchronous rectification secondary stage in combination with QR CoolSET™
ICE2QR2280Z, high- and low-side driver 2EDL05N06PF, low-side gate driver 2EDN7524F, and an XMC4200 microcontroller.

Intelligent powerswitches and modules

Customer benefits– Classic PFC boost stage digitally controlled with XMC1302 including voltage

Microcontrollers

Key features

Gate-driver ICs

Features and benefits

Customer benefits– 600 W LLC half-bridge stage with synchronous rectification (SR)– Learn LLC topology with a complete system solution from Infineon– HW and- SW available– Close to customer solution– High efficiency → 97.8%– Reliability and power density

600 W LLC digital control

Specification

Infineon components

Vin350-410 VDC

MCU

Vout_nom

12 VDCMOSFET SR

BSC010N04LS

Iout

50 A

HB driver

2EDL05N06PF

Pout

600 W

LLC HB MOSFET

CoolMOS™ IPP60R190P6

fres

157 kHz

Auxiliary PSU

ICE2QR2280Z

XMC4200 (VQFN48)

Sensors

All controlled with XMC4200 including:– Start up (PWM to PFM) and burst-mode algorithms– Adaptive dead time and capacitive-mode detection– No hard commutation at any condition

WBG semiconductors

Key features

Powermanagement ICs

Features and benefits

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Solutions

XMC™ power conversion kits

Applications

3 kW dual-phase LLC converter using XMC4400

500-950 V MOSFETs

15-300 V MOSFETs

The 3 kW dual-phase LLC demonstration board is an example of a high-efficiency isolated DC-DC converter using thestate-of-the-art Infineon components, both power devices and controller/driver ICs. Using an advanced digital control
using the XMC4400 microcontroller, together with the latest generation of CoolMOS™ and OptiMOS™ devices, achieves
a very flat efficiency curve in the entire load range. The demonstration board targets the high-voltage DC-DC stage ofhigh-end telecom rectifiers.

Key features

Customer benefits– Full digital control by XMC4400 on the secondary side
– Digital current sharing with phase shedding– Accurate algorithm able to prevent hard commutation and capacitive load

– Full digital control by XMC4400 on the secondary side
– Efficiency peak 98.5% and more than 97.2% in the entire load range– Easy monitoring and parameter setting via a graphic user interface
Infineon components

350-410 VDC

MCU

XMC4400 (LQFP64)

Vout_nom

54.3 VDC

SR MOSFET

OptiMOS™
BSC093N15NS5

Iout_max

55 A

Drivers

1EDI60N12AF
2EDN7524R

Pout

3000 W

LLC
Half-bridge MOSFET

CoolMOS™ P6
IPW60R041P6

frange90-200 kHz

Auxiliary PSU

ICE2QR2280Z

Peak efficiency>98.4%

Digital isolators

Specification
Vin

IGBT discretes andsilicon power diodes

3 kW dual-phase LLC converter using XMC4400

RGB LED lighting shield with XMC1202 for Arduino

Microcontrollers

The RGB LED lighting shield with XMC1202 for Arduino uses a DC-DC buck topology and can drive up to three LED
channels with a constant current. The shield is powered by a programmable XMC™ 32-bit Arm® MCU with an embedded
brightness color control unit (BCCU, XMC1200 MCU series), for flicker-free LED dimming and color control.

Intelligent powerswitches and modules

mode in LLC operation

Gate-driver ICs

Features and benefitsPowermanagement ICs

USB-C controllers
and peripherals

Features› Compatible with Arduino Uno R3 and XMC1100
boot kit from Infineon› Easily configurable for various light engines andany input voltage (within operating conditions)› Wide DC input voltage range› Simple I2C interface

WBG semiconductors

Operating conditions› Nominal: 12-48 V input voltage (max. 6-60 V)› Average LED current up to 700 mA (max. peak current 1 A)

Sensors

The Infineon shields mentioned above are hardware
compatible with Arduino and Infineon’s XMC™ boot andrelax kits.

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XMC4800 automation board V2 – explore XMC4800 microcontroller based onArm® Cortex®-M4
The XMC4800 automation board V2 uses Infineon’s industry-leading XMC™ Arm® Cortex®-M4 microcontroller in
combination with Infineon's supply, interface, communication, and safety products. The XMC4800 automation board
V2 is designed to evaluate the capabilities of the XMC4800 microcontroller, especially in EtherCAT® slave applications
and can be used with a wide range of development tools, including Infineon’s free-of-charge ModusToolbox™ Software.

500-950 V MOSFETs

3 kW dual-phase LLC converter

15-300 V MOSFETs

Applications

Solutions

XMC™ power conversion kits

– Complete automation kit gateway– Combined MCU with EtherCAT® slave application– Isolated interfaces with diagnose– Ethernet connectivity with software examples available– 24 V supply– CAN connectivity– Full software DAVE™ examples

DescriptionOPN

XMC4800-E196K2048

Arm® Cortex®-M4 microcontroller

XMC4800E196K2048AAXQMA1ISO2H823V2.5

24 V 8-channel isolated output

ISO2H823V25XUMA1

ISO1I813T

24 V 8-channel isolated input

ISO1I813TXUMA1SLS 32AIA020A4 USON10

OPTIGA™ Trust E – embedded security solution

SLS32AIA020A4USON10XTMA2

TLE6250GV33

Infineon CAN transceiver

TLE6250GV33XUMA1IFX54441LDVInfineon voltage regulator

IFX54441LDVXUMA1

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

KITXMC48AUTBASEV2TOBO1Intelligent powerswitches and modulesType

KIT_XMC48_AUT_BASE_V2 The XMC4800 automation board V2 utilizes Infineon’s industry leading XMC™ Arm® Cortex®-M4 microcontroller in combination with
Infineon's supply, interface/communication and safety products

Microcontrollers

XMC4800 automation board V2

Digital isolators

Customer benefits– XMC4800-E196 MCU based on Arm® Cortex®-M4 at 144 MHz– EtherCAT® slave controller, 2 MB flash and 352 kB RAM– OPTIGA™ Trust E embedded security solution (CC EAL6+)– Real time clock crystal– SPI FRAM (64 kB non-volatile memory)– EtherCAT® slave node (2 EtherCAT® PHY and RJ45 Jacks)– 24 V ISOFACE™ 8-channel inputs and 8-channel outputs CAN transceiver– CAN transceiver

IGBT discretes andsilicon power diodes

Key features

Gate-driver ICs

Features and benefits

Click here to learn more:
www.infineon.com/aurix
www.infineon.com/motix-mcu

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Solutions

XMC™ power conversion kits

500-950 V MOSFETs

Infineon's XMC™ wireless power controller, based on the Arm® Cortex®-M0 core, provides a powerful and cost-effective
platform for high-performance, smart, and safe wireless charging applications. The XMC™ wireless power controller
helps the next-generation wireless charging systems to meet strict safety, environmental, and regulatory requirements
while still enabling industry-leading charging performance and efficiency. This controller works seamlessly with
Infineon's power devices in a scalable architecture provide a complete charging solution for everything from afast-charge smartphone to a 20 W robot or a 60 W drone and beyond.

15-300 V MOSFETs

Applications

XMC™ wireless power controller –enabling wireless charging transmitter applications

Gate-driver ICs

Features and benefits
Key features

Customer benefits– Supports inductive and resonant charging methods– Supports 15 W charging and existing standards, including fast charging– Power levels up to 60 W
– Multiple industry standard and custom charging profiles using the same

– Full power 15 W without exotic thermal management– Achieves charging rates equivalent to wired charging– Single- and multi-coil transmitters– Supports custom-charging profiles and industry standards on the– Half- and full-bridge support– Foreign object detection (FOD) with improved accuracy quality-factor– Variable and fixed-frequency transmitter types– Foreign object detection capability can be extended beyond existing standards– Buck and boost topologies– Integrated flash for parameter storage– Voltage supply 1.8-5.5 V– Space saving VQFN-40 package– Supports custom coils, and greater than three coils

Digital isolatorssame hardware

to improve detection

IGBT discretes andsilicon power diodes

monitoring

Intelligent powerswitches and modules

hardware architectureof smartphones

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

For a detailed overview of Infineon's wireless charging solutions, check the Wireless charging chapter.

Click here to learn more:
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www.infineon.com/motix-mcu

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Applications

Solutions

XMC™ starter kits

XMC™ starter kits

15-300 V MOSFETs

Kits and evaluation boards

Xtreme2Go

500-950 V MOSFETs

Order number: KIT_XMC_2GO_XTR_ XMC1400‒ XMC1400 family kit with ADAFRUIT, MikroE and Shields2Go connectivity.

Gate-driver ICs

Extension for IoT and other cloud applications.
‒ The XMC1400 series devices are optimized for motor control, power conversion
and LED Lighting applications and Human-Machine Interface (HMI).

Digital isolators

For more information on this product, please contact our product support.

IGBT discretes andsilicon power diodes

Platform2Go XMC4400
Order number: KIT_XMC_PLT_2GO_XMC4400‒ Equipped with an Arm® Cortex®-M4 based XMC™ microcontroller, the XMC4400

Microcontrollers

Intelligent powerswitches and modules

Platform2Go is designed to evaluate the capabilities of Infineon’s XMC4400
microcontroller. It can be used with a wide range of development tools including
Infineon’s free of charge ModusToolbox™ Software.
‒ This kit has the XMC4400 device with debugger plus Ethernet, CAN, Arduino,
MikroBUS and Shields2Go form factor.

USB-C controllers
and peripherals

Click on the following to find/purchase the kit:
www.infineon.com/XMC4400patform2goPowermanagement ICs

XMC1400 Arduino

Order number: KIT_XMC1400_ARDUINO‒ This kit utilizes Infineon’s industry leading Arm® Cortex® M0 microcontroller in

WBG semiconductors

combination with Arduino form factor.
‒ It can be used with a wide range of development tools including Infineon’s freeof charge ModusToolbox™ Software and much more.

SupportSensors

Click on the following to find/purchase the kit:
www.infineon.com/xmc1400_ARDUINO

300

15-300 V MOSFETs

Applications

Solutions

XMC™ starter kits

Platform2Go XMC4200

500-950 V MOSFETs

Order number: KIT_XMC_PLT 2GO_XMC 4200

‒ Equipped with an Arm® Cortex®-M4 based XMC™ microcontroller from Infineon

Digital isolators

Gate-driver ICs

Technologies AG, the XMC4200 Platform2Go is designed to evaluate thecapabilities of Infineon’s XMC4200 microcontroller.
‒ It can be used with a wide range of development tools including Infineon’s freeof charge ModusToolbox™ Software.
‒ This kit has the XMC4200 device with debugger plus CAN, Arduino, MikroBUS
and Shields2Go form factor.

IGBT discretes andsilicon power diodes

Click on the following to find/purchase the kit:
www.infineon.com/XMC4200patform2goIntelligent powerswitches and modules

RGB LED Lighting Shield
Order number: KIT_XMC_LED_DALI_20_RGB‒ One of the first intelligent evaluation boards compatible with

USB-C controllers
and peripherals

Microcontrollers

Arduino as well as Infineon’s XMC1100 BOOT KIT.
‒ Designed to be easily configurable and combinable for different
LED light engines and lamps, for fast prototyping and in-expensive
evaluation of LED lighting applications.
‒ The RGB LED lighting shield with XMC1302 uses a DC-DC
buck topology.

SupportSensors

WBG semiconductors

Powermanagement ICs

Click on the following to find/purchase the kit:
www.infineon.com/cms/en/product/evaluation-boards/kit_xmc_led_dali_20_rgb/301

Applications

Solutions

XMC™ evaluation kits

XMC7000 evaluation kits

15-300 V MOSFETs

KIT_XMC71_EVK_LITE_V1

500-950 V MOSFETs

The XMC7100 Evaluation Board (KIT_XMC71_EVK_LITE_V1)
enables you to evaluate and develop your applications using
the XMC7100D microcontroller. The XMC7100D is designed forindustrial applications and is a true programmable embedded

Gate-driver ICs

system-on-chip, integrating up to two 250 MHz Arm®
Cortex®-M7 as the primary application processor, 100-MHz
Arm® Cortex®-M0+ that supports the following:

Digital isolators‒ Low-power operations‒ CAN-FD interface‒ Programmable analog and digital peripherals that allow
faster time-to-market

IGBT discretes andsilicon power diodes

KIT_XMC72_EVK
The XMC7200D is a true programmable embedded system-onchip, integrating up to two 350 MHz Arm® Cortex®-M7 as theMicrocontrollers

Intelligent powerswitches and modules

primary application processor, a 100 MHz Arm® Cortex®-M0+
and is designed for industrial applications. This kit enables you
to evaluate and develop your applications using the XMC7200D
microcontroller. Some of the features of this kit include:‒ High performance‒ Gigabit Ethernet‒ Secure Digital Host Controller (SDHC) supporting SD/SDIO/

USB-C controllers
and peripherals

eMMC interfaces

WBG semiconductors

Powermanagement ICs

Software Technology Partners
Software stacks, UI/UX, compilers, debuggers

SupportSensors

Independent Design House Partners
Designs and builds solutions for customers using Infineon products302

Applications

Solutions

XMC™ peripherals

XMC™ peripherals

15-300 V MOSFETs

IEC60730 class B library for XMC™

500-950 V MOSFETs

Supporting the XMC1xxx and XMC4xxx families
In collaboration with the Hitex consultancy, Infineon developed the IEC60730 – class B software library for XMC™
industrial microcontrollers for household electrical appliances. This is a dedicated software library for XMC™ MCUs
with routines for internal supervisory functions and self-diagnostics.

Documentation

Gate-driver ICs

Extended documentation and pre-certified software libraries to XMC™ Cortex® Arm®-based controllers are free of charge.
For more information, please check: www.hitex.com/classb
Consultancy

Digital isolators

Safety application note
Failure mode report
FMEDA toolby Infineon, revised in workshops by TÜV Süd

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Implementation support by Hitex

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Your problem solver on chip
PSoC™ 4 has tackled some of the complex portions of embedded system designs making it easier for you to get yourproduct to market. Functions such as analog sensor integration, capacitive touch, and wireless connectivity have been
integrated and optimized in PSoC™ 4 just to work.

On-chip
Bluetooth® Low energy

PsoC™ 4200BL

PsoC™ 4200

PsoC™ 4200DS

PsoC™ 4200M

PsoC™ 4200L

Divide and square-root
compute accelerators

PsoC™ 4100PS

PsoC™ 4100S

PsoC™ 4100S
Plus

PsoC™ 4100S
Max

Intelligent analog features plus
programmable digital blocks,
USB 2.0, CAN

PsoC™ 4100M

PsoC™ 4100BL

Entry-level features plus
programmable analog blocks
up to 1-Msps ADC

PsoC™ 4100 family
Intelligent analog
PsoC™ 4100

PsoC™ 4000

Inductive and capacitive
sensing

Entry-level family withCAPSENSE™

PsoC™ 4000S

Microcontrollers

PsoC™ 4200 family
Programmable digital

With 5th generation
CAPSENSE™ technology
IGBT discretes andsilicon power diodes

PsoC™ 4500S

PsoC™ 4000 family
Entry-level

Digital isolators

PsoC™ 4700S

USB-C controllers
and peripherals

Flash capacity and features

Programmable analog and digital blocks
in PSoC™ 4 enable you to customize youranalog-front-end, apply simple glue logic
and easily integrate intelligent analog
sensors into an application

PSoC™ 4 simplifies complex HMI interfaces such as capacitive and inductive
sensing enabling sleek, robust, and easyto-use interfaces

Bluetooth® Low Energy (BLE) integrated
into some PSoC™ 4 devices simplifies RF
design. Additional wired interfaces suchas USB and CAN are also available

Intelligent sensor integration

Capacitive and inductive sensing

Wired and wireless connectivity

WBG semiconductors

Connected

Sensors

Easy-to-use HMI

Power
management ICs

Features and benefits
Sense anythingIntelligent powerswitches and modules

PsoC™ 4700 family
Sense anything

Gate-driver ICs

The PSoC™ 4 portfolio consists of several families of Arm® Cortex®-M0 and Cortex-M0+ microcontrollers. Most devices
in the portfolio include Infineon’s CAPSENSE™ technology for capacitive-sensing applications. Other key features in
the PSoC™ 4 portfolio include a customizable analog front end through programmable analog blocks and wired andwireless connectivity options such as USB, CAN, and Bluetooth® Low Energy. These unique features make PSoC™ 4 theindustry’s most flexible and scalable low-power mixed-signal architecture.

500-950 V MOSFETs

PSoC™ 4 microcontrollers

15-300 V MOSFETs

Applications

Solutions

PSoC™ 4 microcontrollers

Click here to learn more:
www.infineon.com/aurix
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Solutions

PSoC™ 4 microcontrollers

PSoC™ 4100S Plus prototyping kit (CY8CKIT-149)

Make it easy to use

Bluetooth® Low Energy kits

HMI kits for capacitive/inductive sensing

CY8CKIT-143-A

CY8CKIT-141

15-300 V MOSFETs

Make it connected

500-950 V MOSFETs

Make it smarter

Applications

Evaluation kits

PSoC™ 4000S prototyping kit (CY8CKIT-145-40xx)

Digital isolators

Gate-driver ICs

PSoC™ 4 Bluetooth® LE modules* with
PCB or external antenna

CySmart BLE USB Dongle (CY5677)

IGBT discretes andsilicon power diodes

PSoC™ 4100S Max pioneer kit (CY8CKIT-041S-MAX)

PSoC™ 4700S Inductive Sensing Evaluation kit(CY8CKIT-148)

Intelligent powerswitches and modules

PSoC™ 4 Bluetooth® LE Pioneer kit (CY8CKIT-042-BLE-A)

Microcontrollers

PSoC™ 4100PS prototyping kit (CY8CKIT-147)

Software

USB-C controllers
and peripherals

PSoC™ Creator IDE with graphical front ends

Sensors

WBG semiconductors

Powermanagement ICs

ModusToolbox™ Software Environment

Click here to learn more:
www.infineon.com/aurix
www.infineon.com/motix-mcu

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PsoC™ 63 line
Bluetooth® LE MCUs

PsoC™ 6447

PsoC™ 6346

PsoC™ 6347

PsoC™ 644A

PsoC™ 62 line
High Performance
Dual Core Apps CPU

PsoC™ 6244

PsoC™ 6245

PsoC™ 6246

PsoC™ 6247

PsoC™ 6248

PsoC™ 624A

PsoC™ 61 line
Entry-level
single core app CPU

PsoC™ 6144

PsoC™ 6144

PsoC™ 6144

PsoC™ 6144

PsoC™ 6144

PsoC™ 6144

256/128512/256

512/128

1024/512

1024 /512

2048/1024

IGBT discretes andsilicon power diodes

PsoC™ 6445

Intelligent powerswitches and modules

PsoC™ 64 line
Secured MCUs

Digital isolators

The PSoC™ 6 family is built on an ultra-low-power architecture, and the MCUs feature low-power design techniques
ideal for battery-powered applications. The dual-core Arm® Cortex®-M4 and Cortex-M0+ architecture lets designers
optimize power and performance simultaneously. Using its dual cores combined with configurable memory andperipheral protection units, the PSoC™ 6 MCU delivers the highest level of protection defined by the Platform Security
Architecture (PSA) from Arm. Designers can use the MCU’s rich analog and digital peripherals to create custom
analog front ends (AFEs) or digital interfaces for innovative system components such as MEMS sensors and electronic
ink displays. The PSoC™ 6 MCU features the latest generation of industry-leading CAPSENSE™ capacitive-sensing
technology, enabling modern touch and gesture-based interfaces that are robust and reliable. PSoC™ 6 MCU, pairedwith Infineon’s AIROC™ Wi-Fi, AIROC™ Bluetooth®, or AIROC™ combos radio modules, is the perfect solution for secure,
low-power, feature-rich IoT products.

500-950 V MOSFETs

Purpose-Built for IoT

Gate-driver ICs

PSoC™ 6 microcontrollers

15-300 V MOSFETs

Applications

Solutions

PSoC™ 6 microcontrollers

Microcontrollers

Flash [KB] / SRAM capacity (KB)

Features and benefits

USB-C controllers
and peripherals

Lowest power
IoT devices are often portable, making battery life a critical factor. The PSoC™ 6 MCU architecture is built on a
cutting-edge, ultra-low-power, 40-nm process technology with a dual Arm® Cortex®-M core architecture. Active
power consumption is as low as 22-μA/MHz for the M4 core and 15-μA/MHz for the M0+ core. PSoC™ 6 delivers
extended battery life without sacrificing performance.

WBG semiconductors

Powermanagement ICs

Most flexibility
The PSoC™ 6 MCU architecture’s best-in-class flexibility enables the addition of new features and addresses theneed for unique IoT products with multiple connectivity options, such as USB and BLE. PSoC™ 6 also offers softwaredefined peripherals to create custom analog and digital circuits, and the industry’s best capacitive-sensing solution,
CAPSENSE™. In addition, a flexible dual-core architecture is used to optimize for system power consumption andperformance. The possibilities are endless.

Sensors

Built-in security
The PSoC™ 6 MCU architecture supports multiple, simultaneous, secure environments without the need for external
memories or secure elements. It offers scalable, secure memory for multiple, independent user-defined security policies,
preventing your IoT device from becoming a security liability. PSoC™ 6 provides a new standard for IoT security.
Click here to learn more:
www.infineon.com/aurix
www.infineon.com/motix-mcu

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Solutions

PSoC™ 6 microcontrollers

Product family

Kit type

Kit MPN

Applications

PSoC™ 6 Kits
Selection factors

Prototyping

CY8CPROTO-062-4343W

Highest-end MCU, single-band Wi-Fi

PioneerCY8CKIT-062S2-43012

Highest-end MCU, machine learning, graphics, dual-band/low power Wi-Fi, Arduino shield capability

Evaluation

CY8CEVAL-062S2

Highest-end MCU, machine learning, graphics, flexible M.2 card-based Wi-Fi module evaluation (single-band, dualband), Arduino shield capability, mikroBUS interface

PSoC™ 62x7, 62x6, 61x7, 61x6

PioneerCY8CKIT-062-WIFI-BT

Standalone MCU, graphics, single-band Wi-Fi, analog rich, Arduino shield capability

PSoC™ 62x5, 61x5

Prototyping

CY8CPROTO-062S3-4343W

Standalone MCU, single-band Wi-Fi connectivity processor, industrial (CAN-FD)

PSoC™ 62x4, 61x4

PioneerCY8CKIT-062S4

Standalone MCU, low power analog, sensor coprocessor, Arduino shield capability

PSoC™ 64xA

PioneerCY8CKIT-064B0S2-4343W

Standalone secured MCU, trusted firmware-M, single-band Wi-Fi, Arduino shield capability

PSoC™ 64x7

Prototyping

CY8CPROTO-064S1-SB

Standalone secured MCU

PSoC™ 64x5

Prototyping

CY8CPROTO-064B0S3Standalone secured MCU, industrial (CAN-FD)

500-950 V MOSFETs

PSoC™ 62xA, 62x8, 61xA, 61x8

15-300 V MOSFETs

PSoC™ 61, PSoC™ 62 product family

Gate-driver ICs

PSoC™ 64 Product Family

PSoC™ Creator IDE with graphical front ends

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

ModusToolbox™ Software Environment

Digital isolators

Software

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Our automotive PSoC™ offers a low-power solution based on the robust and reliable CAPSENSE™ technology, inductive
sense, and multi-sense converter capabilities. It features edge-connectivity through LIN, CXPI, CAN FD, and iso-UART,
with options for integrated LIN-SBC functionality. Furthermore, the automotive PSoC™ ensures safety compliance withISO 26262 up to ASIL-B (SEooC) / ASIL-C (App-specific) standards, while also providing ISO 21434-ready security withprocess compliance and partial (“off the shelf”) product support.

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

Gate-driver ICs

Scalable PSoC™ 4 Product lineup for general purpose and BMS sensing

500-950 V MOSFETs

Automotive PSoC™

15-300 V MOSFETs

Applications

Solutions

Automotive PSoC™

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Automotive PSoC™ 4 scalable Human Machine Interface roadmap

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www.infineon.com/motix-mcu

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Solutions

Automotive PSoC™

500-950 V MOSFETs
Digital isolators

Multitouch-Touch & Fingerprint Controllers‒ Wide portfolio to support touch screens from 8” to 35”,
trackpads, slider, and buttons.

Gate-driver ICs

HMI (Capacitive/Inductive buttons, sliders and touchpads)‒ High accuracy CapSense or Multi Sense converter IPs
enable high performance capacitive and inductive
sensing on Human-Machine interfaces such as buttons,
sliders, and touchpads.
‒ Targeted for HVAC controls, infotainment buttons, sliders
and touchpads, door handles, POD, HOD, steering wheel
buttons, sunroof control, and foot kick/trunk opener.
‒ ASIL-B ready, integrated CRYPTO hardware accelerator

15-300 V MOSFETs

Applications

PSoC™ 4 scalable family
One stop shop for Driver Information, POS systems, and HMI

IGBT discretes andsilicon power diodes‒ Gen7XL controller supports advanced features: Hover,‒ force sensing, haptic, acoustic, and wet finger tracking.
‒ Gen8 device to support OLED display.

USB-C controllers
and peripherals
Sensors

driving and better battery life
‒ Functional safety support up to ASIL-D ISO 26262‒ Scalable and comprehensive solution supporting thelatest xEV trend.
Smart sensing(POD, HOD, Liquid level sensing, PTC heater ctrl)‒ Multiple sensing interface support with robust operation‒ Small footprint and cost-effective integrated solution
with newest communication stacks‒ Software solution for easy to design and quick market
launch.

Powermanagement ICs‒ High precision analog performance for longer range

WBG semiconductors

Battery management system(Cell-balancing, Current-Sensing)Microcontrollers

Intelligent powerswitches and modules

PSoC™ 4 high voltage - enabling Smart Sensing for future mobility
Enabling safe smart sensing systems

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Features and benefits
Automotive interior HMI
Key features

Key benefits– PSoC™ 4100S: Max 48MHz, 384KB/32KB, MSC,CRYPTO, CAN-FD– PSoC™ 4100L/4200L: 48MHz, 256KB/32KB, 2x CAN,UDB,2xCSD,USB2.0– PSoC™ 4700S Plus: 48MHz, 128KB/16KB, Inductive Sense– PSoC™ 4xxxS Plus: 48MHz, 128KB/16KB, CAN, CapSense (CSDv2)– PSoC™ 4xxxM: 48MHz, 128KB/16KB, UDB, 2xCAN, 2xCSD– Touch-sensing buttons/sliders/touchpads with very thick overlays (>5 mm) canbe supported by CAPSENSE™

Gate-driver ICs

500-950 V MOSFETs– High refresh rates to provide intuitive / responsive HMI– Support force-sensing with CAPSENSE™ (capacitive) or Inductive Sensing– Metal touch surfaces can be enabled by Inductive Sense– Drive LEDs brightness / effects with PWMs
– Scalable solution from 16KB/2KB (Flash/SRAM) up to 384KB/32KB

15-300 V MOSFETs

Applications

Solutions

Automotive PSoC™

Multitouch touch controllers and fingerprint
Key features

Key benefits– CYAT8168X 61-88 I/O, 120-Hz RR– CYAT81761-103 I/O, 120-Hz RR– PSoC 4700S Plus 48MHz, 128KB/16KB, Inductive Sense– CYAT817LS 72 I/O, 100-Hz RR, MCU– CYAT818xxOLED– Fingerprint– High performance Multitouch technology supporting self and mutual capaciDigital isolators

tance sensing with high refresh rate (RR)

– Small footprint packages in TQFP / QFN– Thick glove (5 mm) and water rejection support– Extensive EMI/EMC testing completed to CISPR-25 standard– Automotive quality software with Auto SPICE level-2 and safety features to

IGBT discretes andsilicon power diodes

enable configuration and tuning– Fingerprint: Excellent biometric performance: < 1% FRR at FAR 1:50K,
360° finger placement, 8.0× 8.0 mm sensing area, 340 DPI

Key features

Key benefits– PSoC™ 4 HVPA-SPM: 48MHz 128kB– PSoC™ 4 HVPA-144k: 48MHz 128kB– Integrated PSoC-solution with programmable MCU and high precision analog

Intelligent powerswitches and modules

Battery management systemfor current and voltage monitoring

Microcontrollers– Scalable high voltage technology from 12 V battery to HV battery– NVM for increased flexibility, data-preconditioning, compression and storage(eg. for calibration, SOH for 2nd life)– Synchronous cell voltage and current measurement with integrated transceivers (isoUART, BLE)

– Integrated overcurrent detection and drivers/triggers for battery disconnect
switchUSB-C controllers
and peripherals– Safety components supporting up to ISO 26262 ASIL-D– Automotive quality and safety supported software

Key features

Key benefits– PSoC 4 HVMS-64K: 48MHz 64kB
– PSoC 4 HVMS-128K: 48MHz 128kB– High performance analog (12b SAR ADC at 1Msps), integrated OpAmps, com-Power
management ICs

Smart sensing
parators, CAPSENSE™, Multi-Sense Converter

WBG semiconductors– Serial communication block supporting I2C, SPI, UART, LIN, CAN, CXPI
– Small footprint packages in wettable flank QFN– Extensive EMI/EMC testing completed to CISPR-25 standard– 12 V battery directly operation with integrated high voltage subsystem (LDO,
LIN PHY)

Sensors– Automotive quality and safety supported software

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Solutions
Digital isolators

Gate-driver ICs

500-950 V MOSFETs

15-300 V MOSFETs

Applications

AURIX™ microcontroller

AURIX™ is Infineon’s family of microcontrollers serving the needs of industrial applications in terms of performance andsafety. Its innovative multicore architecture, based on up to six independent 32-bit TriCore™ CPUs at 300 MHz, has been
designed to meet the highest safety standards while increasing performance at the same time. Using the
AURIX™ scalable platform, developers will be able to implement applications such as motor control and drives, PLC, or any
other automa­tion application. Developments using AURIX™ require less effort to achieve the SIL/IEC61508 standard basedon its innovative safety concept and multiple HW safety features. Furthermore, AURIX™ has enhanced communication
capabilities to support communication between CAN, LIN, FlexRay, and Ethernet buses.

– High scalability gives the best cost-performance fit– High integration leads to significant cost savings– High integration leads to reduced complexity– Innovative supply concept leads to best-in-class power consumption

Powermanagement ICs

Customer benefits– TriCore™ with DSP functionality– Best-in-class real-time performance: up to six TriCore™ with up to 300 MHz per core
– Supporting floating point and fix point with all cores– Up to 6.9 MB of internal RAM, up to 16 MB of flash– Innovative single supply 5 V or 3.3 V– IEC61508 conformance to support safety requirements up to SIL 3– Embedded EEPROM

WBG semiconductors

Key features

USB-C controllers
and peripherals

Features and benefits

Microcontrollers

32-bit multicore TriCore™ – safety joins performanceIntelligent powerswitches and modules

IGBT discretes andsilicon power diodes

AURIX™ – 32-bit microcontrollers

Sensors– Advanced communication peripherals: CAN FD, LIN, SPI, FlexRay, Ethernet

Click here to learn more:
www.infineon.com/aurix
www.infineon.com/motix-mcu

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Solutions

AURIX™ microcontroller

Applications

AURIX™ TC2xx family system architecture
PMU

FPU

LMU
DMI
overlay

TriCore™
1.6P

Data flash
BROM
key flash

RAM

Progr.
flash

Progr.
flash

500-950 V MOSFETs

PMI

15-300 V MOSFETs

Powerful 1st generation AURIX™ TC2xx system architecture

Diverselockstep core

FPU

FPU

DMI
overlay

PMI

TriCore™
1.6P

PMI

TriCore™
1.6E

BridgeDMI
stand-byoverlay

SDMA

OCDS

System peripheral bus

IGBT discretes andsilicon power diodes

System peripheral bus

DS-ADCx

ADCxIntelligent powerswitches and modules

PLL &PLL ERAY

HSSL

BCU

SCU

STM

HSM

IOM

5 or 3.3 V
single supply

Microcontrollers

FCE

I2C

PSI5

SENT

EVR
QSPIx

GPT12xASCLINx

CCU6x

Ports

MSCx

MultiCAN+

FlexRay

Ethernet

GTM

Digital isolators

Diverselockstep coreGate-driver ICs

SRI cross bar

AURIX™ TC2xx family package scalability
300 MHzTC275

7x series

200 MHzup to 4 MB

TC264

200 MHz

200 MHzup to 2 MB

2x series
up to 1 MB

1x series
up to 512 KB

Flash
Package

TC222

133 MHz

TC212

TC223

133 MHz

TC213

TC234

BGA-416

LFBGA-516

TC277

200 MHz

TC267

200 MHz

TC237

200 MHz

200 MHzWBG semiconductors

TC233

3x series

TC265

200 MHz

TC299

300 MHzTC224

133 MHzTC214

133 MHz133 MHz133 MHzTQFP-80

TQFP-100

LQFP-144
TQFP-144

LQFP-176

LFBGA-292

Sensors

6x series
up to 2.5 MB

TC298

300 MHz

Power
management ICs

up to 8 MB

USB-C controllers
and peripherals

TC297

9x series

Upgrade/downgrade with pin-compatible packages

Click here to learn more:
www.infineon.com/aurix
www.infineon.com/motix-mcu

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Applications

Solutions

AURIX™ microcontroller

LFBGA-516

EVR, STBU, HSM

TC299TP300

8000 728

FPU

3/1 263 84/10 DS yes 6

4xASCLIN, 6xQSPI, 3xMSC, 2xI2C, 15xSENT, HSSL, 5xPSI5, 2xFlexRay, Ethernet, CAN FD KLFBGA-516

EVR, STBU, HSM

TC298TP300

8000 728

FPU

3/1 232 60/10 DS yes 6

4xASCLIN, 6xQSPI, 3xMSC, 2xI2C, 15xSENT, HSSL, 5xPSI5, 2xFlexRay, Ethernet, CAN FD K

LBGA-416

EVR, STBU, HSM

TC297TA

300

8000 2728 FPU, FFT, CIF 3/1 169 60/10 DS no

6

4xASCLIN, 4xQSPI, 3xMSC, 2xI2C, 15xSENT, HSSL, 5xPSI5, 2xFlexRay, Ethernet, CAN FD KLFBGA-292

EVR, STBU, HSM

TC297TX

300

8000 2728 FPU

3/1 263 60/10 DS no

6

4xASCLIN, 4xQSPI, 3xMSC, 2xI2C, 15xSENT, HSSL, 5xPSI5, 2xFlexRay, Ethernet, CAN FD KLFBGA-292

EVR, STBU, HSM

TC297TP300

8000 728

FPU

3/1 169 60/10 DS no

6

4xASCLIN, 4xQSPI, 3xMSC, 2xI2C, 15xSENT, HSSL, 5xPSI5, 2xFlexRay, Ethernet, CAN FD KLFBGA-292

EVR, STBU, HSM

TC277TP200

4000 472

FPU

3/2 169 60/6 DS

no4

4xASCLIN, 4xQSPI, 2xMSC, HSSL, 2xI2C, 10xSENT, 3xPSI5, FlexRay, Ethernet, CAN FDKLFBGA-292

EVR, WUT, HSM

TC275TP200

4000 472

FPU

3/2 112 60/6 DS

no4

4xASCLIN, 4xQSPI, 2xMSC, HSSL, 2xI2C, 10xSENT, 3xPSI5, FlexRay, Ethernet, CAN FDK

LQFP-176

EVR, WUT, HSM

TC267D200

2500 240

FPU

2/1 169 50/3 DS

no5

4xASCLIN, 4xQSPI, 2xMSC, 2xI2C, 10xSENT, 3xPSI5, HSSL, FlexRay, Ethernet, CAN FDKLFBGA-292

EVR, STBU

TC265D200

2500 240

FPU

2/1 112 50/3 DS

no5

4xASCLIN, 4xQSPI, 2xMSC, 2xI2C, 10xSENT, HSSL, 3xPSI5, FlexRay, Ethernet, CAN FDK

LQFP-176

EVR, STBU

TC264DA

200

2500 752

FPU, FFT, CIF 2/1 88

40/3 DS

no5

4xASCLIN, 4xQSPI, 2xMSC, 2xI2C, 10xSENT, HSSL, 3xPSI5, FlexRay, Ethernet, CAN FDK

LQFP-144

EVR, STBU

TC264D200

2500 240

FPU

2/1 8840/3 DS

no5

4xASCLIN, 4xQSPI, 2xMSC, 2xI2C, 10xSENT, HSSL, 3xPSI5, FlexRay, Ethernet, CAN FDK

LQFP-144

EVR, STBU

TC237LP

200

2000 192

FPU

1/1 120 24

no6

2xASCLIN, 4xQSPI, 4xSENT, FlexRay, CAN FDKLFBGA-292

EVR, WUT, HSM

TC234LA

200

2000 704

FPU, FFT

1/1 120 24

no6

2xASCLIN, 4xQSPI, 4xSENT, FlexRay, Ethernet

K

TQFP-144

EVR, WUT, HSM

TC234LX

200

2000 704

FPU

1/1 120 24

no6

2xASCLIN, 4xQSPI, 4xSENT, FlexRay, Ethernet

K

TQFP-144

EVR, WUT, HSM

TC234LP

200

2000 192

FPU

1/1 120 24

no6

2xASCLIN, 4xQSPI, 4xSENT, FlexRay, CAN FDK

TQFP-144

EVR, WUT, HSM

TC233LP

200

2000 192

FPU

1/1 7824

no

6

2xASCLIN, 4xQSPI, 4xSENT, FlexRay, CAN FDK

TQFP-100

EVR, WUT, HSM

TC224L

133

1000 96

FPU

1/1 120 24

no3

2xASCLIN, 4xQSPI, 4xSENT, CAN FDK

TQFP-144

EVR, WUT

TC223L

133

1000 96

FPU

1/1 7824

no3

2xASCLIN, 4xQSPI, 4xSENT, CAN FDK

TQFP-100

EVR, WUT

TC222L

133

1000 96

FPU

1/1 5924

no3

2xASCLIN, 4xQSPI, 4xSENT, CAN FDK

TQFP-80

EVR, WUT

TC214L

133

500

96

FPU

1/1 120 14

no3

2xASCLIN, 4xQSPI, 4xSENT, CAN FDK

TQFP-144

EVR, WUT

TC213L

133

500

96

FPU

1/1 7824

no3

2xASCLIN, 4xQSPI, 4xSENT, CAN FDK

TQFP-100

EVR, WUT

TC212L

133

500

96

FPU

1/1 5924

no3

2xASCLIN, 4xQSPI, 4xSENT, CAN FDK

TQFP-80

EVR, WUT

15-300 V MOSFETs
Gate-driver ICs

4xASCLIN, 6xQSPI, 3xMSC, 2xI2C, 15xSENT, HSSL, 5xPSI5, 2xFlexRay, Ethernet, CAN FD K

Digital isolators

3/1 263 84/10 DS yes 6

IGBT discretes andsilicon power diodes

8000 2728 FPUIntelligent powerswitches and modules

300

Microcontrollers

TC299TX

500-950 V MOSFETs

Additional features/remarks 4)

Packages

Temperature ranges 3)

Communication interfaces 2)

CAN nodes

External bus interface

Number of ADC channels

Timed I/O

Cores/lockstep

Co-processor 1)

SRAM (incl. cache) [kB]

Program memory [kB]

Max. clock frequency [MHz]Product type

AURIX™ TC2xx portfolio

 IF = camera and external ADC Interface, FFT = fast fourier transform accelerator, FPU = floating point unit, PCP = peripheral control processor
CASC = asynchronous serial channel, ASCLIN = asyn/synchronous local interconnect network, HSSL= high-speed serial link, I2C = inter-integrated circuit,
LIN = local interconnect network, MLI = micro link interface, MSC = micro second channel, PSI5 = peripheral sensor interface 5, QSPI = queued serial peripheral interface, SENT =single edge nibble transmission, SSC = synchronous serial channel, CAN FD ISO11898-1:2015
3)
Ambient temperature range: A = -40°C ... 140°C, B = 0°C ... 70°C, F = -40°C ... 85°C, H = -40°C ... 110°C, K = -40°C ... 125°C, L = -40°C ... 150°C, X = -40°C ... 105°C
4)
EVR = embedded voltage regulator, HSM = hardware security module, STBU = stand-by control unit, WUT = wake-up timer
1)

USB-C controllers
and peripherals

2)

Power
management ICs

Evolution from TC2xx to TC3xx - Easy migration with focus on reuse

Sensors

WBG semiconductors‒ Fast conversion of existing AURIX™ TC2xx designs– Backwards compatibility– High AURIX™ TC3xx compatibility to pinout of existing QFP100/144/176 and BGA packages‒ Flexibility - scalability within the AURIX™ TC3xx family– Up-/Downgrade paths for devices in identical packages– Compatible pin-out of QFP/BGA package options enabling combination designs‒ Pin-to-pin compatibility between the devices of AURIX™ TC2xx/TC3xx and from generation to generation‒ A high scalability with a very large portfolio for both AURIX™ TC2xx and TC3xx

Click here to learn more:
www.infineon.com/aurix
www.infineon.com/motix-mcu

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Solutions

AURIX™ microcontroller

Mini
MCDS

ETH
MAC

SFI
bridgeHSSL
HSCT› Larger SRAM
› SRAM/flash ratio increased› Enhanced MPU› A/B swap support

SENT

PSI5S

PSI5

I2 C

Stand-by control unit
› Low-power modes

ASC LINCAN FD

ERAY

STM

GPT

CCU6

GTM

EDS ADC

FCOMP

Secondary ADC

DMA

Systemperipheral
bus

EVADC

Primary ADC

Delta-sigma› Enhanced concept
Memories

QSPI/I2S (emulation)

eMMC/SDIO

StdBy ctrl

HSM

FCE

MSC

HSDPM

SCU

IOM

Port

System resource interconnect

ADC› Improvement of existing ADC› Reduction of capacitive load

Digital isolators

Large
MEM

DAM

ADAS
› LVDS IF› Signal processing unit

SPU
RIF

IGBT discretes andsilicon power diodes

LMU

HSM: Full EVITA compliance› New accelerators ECC256/SHA256› Available on all devices

Ethernet› 1 Gbit/s ETH› QoS services› Remote DMAIntelligent powerswitches and modules

CPU4

CPU5

SPU
RIF

CIF

Pflash0…5

DflashSafety› LBIST› MBIST upgrade

eMMC/SDIO› External NAND flash IF

Microcontrollers

FPU
PSPR, PCACHEDSPR, DCACHE

CPU2

CPU1

TC 1.6P
CPU0

CPU3

Checker core
Checker core
Checker core
Checker core

Performance› New TriCore™ 162 generation› New instructions› Up to 6 CPUs at 300 MHz› New direct flash access path

Functional safety

IEC61508 compliant enabling SiL-3 level

Enhanced security

Upgraded to Full EVITA support

Improved networking

Richer peripheral set

SOTA

Full support of SOTA A/B swap

Powermanagement ICs

Fully compatible devices with focus on HW & SW reuse

WBG semiconductors

Scalable and backwards compatible with TC2xx

Sensors

Increased from 3 to 6 cores
Developed in 40 nm for power consumption reduction

USB-C controllers
and peripherals

AURIX™ TC3xx provides an upgrade on key parameterswith focus on SW and HW reuse
Performance increase and reduction of power

500-950 V MOSFETs

IO pads
all 5 V/3.3 V

Gate-driver ICs

AURIX™ TC3xx – scalable family - from low-cost to high-performance applications

15-300 V MOSFETs

Applications

AURIX™ TC3xx family system architecture

Click here to learn more:
www.infineon.com/aurix
www.infineon.com/motix-mcu

www.infineon.com/psoc
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Solutions

AURIX™ microcontroller

TC397XA

16 MB

300 MHz6x 300 MHz

9x series

TC397xTC399x

16 MB

300 MHz

300 MHz4x 300 MHz

Ex series

TC387Qx

12 MB

300 MHz8x series

TC387Q

TC389Q

10 MB

300 MHz

300 MHz3x 300 MHz

7x X series

TC377TX

6 MB

300 MHz3x 300 MHz

7x series

TC375TTC377T

6 MB

300 MHz

300 MHz2x 300 MHz

6x series

TC364DTC366D

TC365D

TC367D

4 MB

300 MHz

300 MHz

300 MHz

300 MHz4x 300 MHz

Ax series

TC3A8Q

TC3A7Q

4 MB

300 MHz

300 MHz3x 300 MHz

5x A series

TC356TA

TC357TA

4 MB

300 MHz

300 MHz2x 300 MHz

3x A series

TC336DA1)

TC337DA1)

2 MB

200 MHz

200 MHz1x 300 MHz

3x series

TC332L1)

TC333L1)

TC334L1)

TC336L1)

TC337L1)

2 MB

200 MHz

200 MHz

200 MHz

200 MHz

200 MHz1x 300 MHz

2x series

TC322LTC323LTC324LTC327L

1 MB

160 MHz

160 MHz

160 MHz

160 MHzTQFP-80

TQFP-100

T/LQFP-144

Flash
Package
L – Single lockstep coreD – Dual core

T – Triple coreQ – Quadruple core

BGA-180

LQFP-176

BGA-233

X – Sextuple core

LFBGA-292

Control and actuate

Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules

4x 300 MHz

500-950 V MOSFETs

9x A series

Gate-driver ICs

6x 300 MHz

15-300 V MOSFETs

Applications

AURIX™ TC3xx package scalability

LFBGA-516
Sense and compute

Microcontrollers

1) An option of 300 MHz is also available

MCU scalability

USB-C controllers
and peripherals‒ Advanced package technologies deliver the best price/performance ratio‒ Customers can choose between different devices in the same pin-compatible package
Safety/security concept› ISO 26262 compliance› IEC61508 compliantPowermanagement ICs› Performance and flash› Pin compatibility› Binary-compatible cores
AURIX™ TC3xx

Connectivity

Power consumption

Sensors

WBG semiconductors› Ethernet: up to 2x1 GB› CAN FD: up to 12 channels› eMMC IF› On-chip SC DC-DC high-efficiency power supply› Integrated standby controller

Click here to learn more:
www.infineon.com/aurix
www.infineon.com/motix-mcu

www.infineon.com/psoc
www.infineon.com/traveo

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315

Applications

Solutions

AURIX™ microcontroller

6x SPI, 2x FlexRay, 12x LIN,
25x SENT, 4x PSI5, 2x I2C, 4x MSC

EVITA
full

K, L LFBGA-516

5 V/3.3 V EVR,
8-bit SCR

TC399XP 6/4

300

16000

2816

no

12

1

EBU, eMMC,
2x HSSL

6x SPI, 2x FlexRay, 12x LIN,
25x SENT, 4x PSI5, 2x I2C, 4x MSC

EVITA
full

K, L LFBGA-516

5 V/3.3 V EVR,
8-bit SCR

TC397XX 6/4

300

16000

6912

no

12

1

eMMC, 2xHSSL

6x SPI, 2x FlexRay, 12x LIN,
25x SENT, 4x PSI5, 2x I2C, 4x MSC

EVITA
full

K, L LFBGA-292

5 V/3.3 V EVR,
8-bit SCR

TC397XP 6/4

300

16000

2816

no

12

1

eMMC, 2xHSSL

6x SPI, 2x FlexRay, 12x LIN,
25x SENT, 4x PSI5, 2x I2C, 4x MSC

EVITA
full

K, L LFBGA-292

5 V/3.3 V EVR,
8-bit SCR

TC397XA 6/4

300

16000

6912

2x SPU/
8x 400 Mbit/s LVDS

121

2x HSSL

6x SPI, 2x FlexRay, 12x LIN,
25x SENT, 4x PSI5, 2x I2C, 4x MSC

EVITA
full

K, L LFBGA-292

5 V/3.3 V EVR,
8-bit SCR

TC389QP 4/2

300

10000

1568

no

12

1

HSSL

5x SPI, 2x FlexRay, 24x LIN,
25x SENT, 4x PSI5, 2x I2C, 3x MSC

EVITA
full

K, L LFBGA-516

5 V/3.3 V EVR,
8-bit SCR

TC387QP 4/2

300

10000

1568

no

12

1

HSSL

5x SPI, 2x FlexRay, 24x LIN,
25x SENT, 4x PSI5, 2x I2C, 3x MSC

EVITA
full

K, L LFBGA-292

5 V/3.3 V EVR,
8-bit SCR

TC377TX 3/3

300

6000

4208

no

12

2

eMMC, HSSL 5x SPI, 1x FlexRay, 12x LIN,
15x SENT, 2x PSI5, 1x I2C, 2x MSC

EVITA
full

K, L LFBGA-292

5 V/3.3 V EVR,
8-bit SCR

TC377TP 3/2

300

6000

1136

no

8

1

HSSL

5x SPI, 1x FlexRay, 12x LIN,
15x SENT, 2x PSI5, 1x I2C, 2x MSC

EVITA
full

K, L LFBGA-292

5 V/3.3 V EVR,
8-bit SCR

TC375TP 3/2

300

6000

1136

no

8

1

HSSL

5x SPI, 1x FlexRay, 12x LIN,
15x SENT, 2x PSI5, 1x I2C, 2x MSC

EVITA
full

K, L LQFP-176

5 V/3.3 V EVR,
8-bit SCR

TC367DP 2/2

300

4000

672

no

8

1

HSSL

4x SPI, 1x FlexRay, 12x LIN,
10x SENT, 2x PSI5, 1x I2C, 1x MSC

EVITA
full

K, L LFBGA-292

5 V/3.3 V EVR,
8-bit SCR

TC366DP 2/2

300

4000

672

no

8

1

HSSL

4x SPI, 1x FlexRay, 12x LIN,
10x SENT, 2x PSI5, 1x I2C, 1x MSC

EVITA
full

K, L LFBGA-196

5 V/3.3 V EVR,
8-bit SCR

TC365DP 2/2

300

4000

672

no

8

1

HSSL

4x SPI, 1x FlexRay, 12x LIN,
10x SENT, 2x PSI5, 1x I2C, 1x MSC

EVITA
full

K, L LQFP-176

5 V/3.3 V EVR,
8-bit SCR

TC364DP 2/2

300

4000

672

no

8

1

HSSL

4x SPI, 1x FlexRay, 12x LIN, 10x
SENT, 2x PSI5, 1x I2C, 1x MSC

EVITA
full

K, L TQFP-144

5 V/3.3 V EVR,
8-bit SCR

TC364DP 2/2

300

4000

672

no

8

1

HSSL

4x SPI, 1x FlexRay, 12x LIN,
10x SENT, 2x PSI5, 1x I2C, 1x MSC

EVITA
full

K, L LQFP-144

5 V/3.3 V EVR,
8-bit SCR

TC357TA 3/2

300

4000

3664

2x SPU/
8x 400 Mbit/s LVDS

8

1

no

4x SPI, 1x FlexRay, 4x LIN

EVITA
full

K, L LFBGA-292

5 V/3.3 V EVR,
8-bit SCR

TC356TA 3/2

300

4000

3664

2x SPU/
8x 400 Mbit/s LVDS

8

1

no

4x SPI, 1x FlexRay, 4x LIN

EVITA
full

K, L LFBGA-196

5 V/3.3 V EVR,
8-bit SCR

TC337DA 2/1

200

2000

1568

1x SPU/
4x 400 Mbit/s LVDS

8

1

eMMC

4x SPI, 1x FlexRay, 12x LIN, 6x
SENT

EVITA
full

K, L LFBGA-292

5 V/3.3 V EVR,
8-bit SCR

TC336DA 2/1

200

2000

1568

1x SPU/
4x 400 Mbit/s LVDS

8

1

eMMC

4x SPI, 1x FlexRay, 12x LIN, 6x
SENT

EVITA
full

K, L LFBGA-196

5 V/3.3 V EVR,
8-bit SCR

TC337LP 1/1

200

2000

248

no

8

no

no

4x SPI, 1x FlexRay, 12x LIN, 6x
SENT

EVITA
full

K, L LFBGA-292

5 V/3.3 V EVR,
8-bit SCR

TC336LP 1/1

200

2000

248

no

8

no

no

4x SPI, 1x FlexRay, 12x LIN, 6x
SENT

EVITA
full

K, L LFBGA-196

5 V/3.3 V EVR,
8-bit SCR

TC334LP 1/1

200

2000

248

no

8

no

no

4x SPI, 1x FlexRay, 12x LIN, 6x
SENT

EVITA
full

K, L TQFP-144

5 V/3.3 V EVR,
8-bit SCR

TC333LP 1/1

200

2000

248

no

8

no

no

4x SPI, 1x FlexRay, 12x LIN, 6x
SENT

EVITA
full

K, L TQFP-100

5 V/3.3 V EVR,
8-bit SCR

TC332LP 1/1

200

2000

248

no

8

no

no

4x SPI, 1x FlexRay, 12x LIN, 6x
SENT

EVITA
full

K, L TQFP-80

5 V/3.3 V EVR,
8-bit SCR

TC327LP 1/1

160

1000

96

no

8

no

no

4x SPI, 6x SENT, 6x LIN

EVITA
full

K, L LFBGA-292

5 V/3.3 V EVR,
8-bit SCR

TC324LP 1/1

160

1000

96

no

8

no

no

4x SPI, 6x SENT, 6x LIN

EVITA
full

K, L TQFP-144

5 V/3.3 V EVR,
8-bit SCR

TC323LP 1/1

160

1000

96

no

8

no

no

4x SPI, 6x SENT, 6x LIN

EVITA
full

K, L TQFP-100

5 V/3.3 V EVR,
8-bit SCR

TC322LP 1/1

160

1000

96

no

8

no

no

4x SPI, 6x SENT, 6x LIN

EVITA
full

K, L TQFP-80

5 V/3.3 V EVR,
8-bit SCR

15-300 V MOSFETs

EBU, eMMC,
2x HSSL

500-950 V MOSFETs

Additionalfeatures/remarks 3)

1

Packages

12

Temperature ranges

Ethernet
100/1000 Mbit

no

HSM

CAN/CAN FD
nodes

6912

External bus
interface 2)

SRAM (incl. cache) [kB]

16000

Radar
accelerator/
radar interface 1)

Programmemory[kB]

300

Cores/lockstep

TC399XX 6/4

Product type

Max clockfrequency[MHz]

Communication interfaces

AURIX™ TC3xx portfolio

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

Gate-driver ICs

AURIX™ TC3xx family

Click here to learn more:

1) SPU – Signal processing unit

www.infineon.com/aurix
www.infineon.com/motix-mcu

2) HSSL – High-speed serial link

www.infineon.com/psoc
www.infineon.com/traveo3) 8-bit SCR – Standby controller for low power modes

4) EVR – Embedded voltage regulator

Supportwww.infineon.com/xmc
www.infineon.com/mtb

316

Applications

Solutions

AURIX™ microcontroller

AURIX™ starter and application kits

15-300 V MOSFETs

Infineon starter kits – 32-bit microcontrollers

AURIX™ Triboards Kits

500-950 V MOSFETs‒ Full evaluation board for development to write

Digital isolators

Gate-driver ICs

and debug your first programs‒ Includes getting started advice, free TriCore™
entry tool chain, technical documentation,compiler, and debugger‒ TriBoard available for all productive siliconwww.infineon.com/aurix-kits

AURIX™ TFT Kits

IGBT discretes andsilicon power diodes‒ Low cost board for early evaluation with limitedIntelligent powerswitches and modules

access to signals‒ Additional touchscreen display for convenient handling‒ TFT board available for every silicon
Click on the following to find/purchase the kit:
www.infineon.com/aurix-kits

Microcontrollers

Arduino AURIX™ TC275 ShieldBuddy Kit

USB-C controllers
and peripherals‒ The Hitex TC275/TC375 ShieldBuddy follows the Arduino standard‒ Compatible with hundreds of Arduino application shields‒ Evaluation licenses available‒ Ideal for getting started on a high-end real time embedded industrial
or automotive application as well as students and hobbyists

Powermanagement ICs

www.infineon.com/aurixlowcostarduinokits

Arduino AURIX™ TC375 ShieldBuddy Kit

WBG semiconductors

Order number: KIT_A2G_TC375_ARD_SB‒ Compatible with hundreds of Arduino application shields‒ Evaluation licenses available‒ Ethernet‒ Ideal for getting started on a high-end real time embedded industrial
or automotive application as well as students and hobbyists

Sensorswww.infineon.com/aurixlowcostarduinokits

Click here to learn more:
www.infineon.com/aurix
www.infineon.com/motix-mcu

www.infineon.com/psoc
www.infineon.com/traveo

Supportwww.infineon.com/xmc
www.infineon.com/mtb

317

Applications

Solutions

AURIX™ microcontroller

AURIX™ TC275 Lite kit

15-300 V MOSFETs‒ AURIX™ TC275 device in LQFP-176 package‒ FTDI based debugger with micro USB‒ Use of Arduino Uno/compatible platform

500-950 V MOSFETs

www.infineon.com/aurixlowcostarduinokits

AURIX™ TC375 Lite kit

Digital isolators

Gate-driver ICs‒ AURIX™ TC375 device in LQFP-176 package‒ Ethernet PHY‒ FTDI based debugger with micro USB‒ Use of Arduino Uno/compatible platform

IGBT discretes andsilicon power diodes

www.infineon.com/aurixlowcostarduinokits

Intelligent powerswitches and modules

Discover our AURIX™ kits platform for
more starter and application kits

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

www.infineon.com/aurixkits

Click here to learn more:
www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

Supportwww.infineon.com/smps
www.infineon.com/xxxxxxx

318

Solutions

AURIX™ microcontroller

Applications

Infineon application kits – 32-bit microcontrollers

24 GHZ Radar

500-950 V MOSFETs

15-300 V MOSFETs

Based on the Infineon AURIX™ and MMIC BGT24A families‒ BGT24A transceiver MMIC family, e.g. BGTA24ATR12,‒ 2-bit radar microcontroller family, e.g. SAK-TC264DA- 40F200‒ FFT acceleration engine and extended memory forradar image storage‒ Ethernet as measurement interface

Gate-driver ICs

www.infineon.com/aurixapplicationkits

60 GHZ Radar

IGBT discretes andsilicon power diodes

Digital isolators

XENSIV™ BGT60ATR24C+ AURIX™ TC356TA+ OPTIREG™ TLS4120D0EPV33/TLS715B0EJV50‒ Modular architecture‒ Automotive qualified components‒ Virtual array processing (TDM MIMO)‒ Ultra-wideband operation of 4 GHz‒ Optimized performance versus power with SPUIntelligent powerswitches and modules

www.infineon.com/aurixapplicationkits

Motor control

Microcontrollers

Order number: KIT_AURIX_TC234_MOTORCTR‒ TC234 application kit with TFT display incl. safety supply TLF35584‒ Driving of a 3-phase PMSM/BLCD (12 V/max. 50 W)‒ BLDC motor from Nanotec integrated‒ Software available with flexible configuration

USB-C controllers
and peripherals

www.infineon.com/aurixapplicationkits

Motor control board AURIX™ TC387

WBG semiconductors

Powermanagement ICs

Order number: KIT_AURIX_TC234_MOTORCTR‒ TC387 Application Kit with TFT Display incl. safety supply TLF35584‒ eMotor Power board: 3-phase motor control power board with
TLE9180D-31QK 3-phase gate driver IC, MOSFET power stage,
and auxiliary components‒ Commands and monitoring via TFT touch screen‒ Field oriented control (FOC) algorithm using 3-phase current
sensing (EVADC) encoder as position sensor (GPT12) andAURIX™ GTM as PWM generator

Sensorswww.infineon.com/aurixapplicationkits

Click here to learn more:
www.infineon.com/aurix
www.infineon.com/motix-mcu

www.infineon.com/psoc
www.infineon.com/traveo

Supportwww.infineon.com/xmc
www.infineon.com/mtb

319

Applications

Solutions

AURIX™ microcontroller

Industrial robotics

Suggested products‒ TC23x‒ TC33x‒ TC36x‒ TC37x

500-950 V MOSFETs

System benefits‒ High computing performance: up to 6x 300 MHz‒ High flexibility thanks to tailored peripherals‒ Integrated safety support(EN ISO 10218 and ISO/TS15066)‒ Integrated security with hardware security module‒ Robust 3 V-, 5 V-, LVDS – PortPins‒ Large portfolio with long-term availability

Gate-driver ICs

Application features‒ High computing performance‒ High level of accuracy, integration, and efficiency‒ Safety management in line with current norms‒ Various topologies for axis, joints, and motors‒ Security features that protect intellectual property
from counterfeiting

15-300 V MOSFETs

Application example

IGBT discretes andsilicon power diodes

Digital isolators‒ TC38x‒ TC39x‒ XMC4xxx

Power management
LDO
SMPS

Authentication

Gate driver

Security

3-phaseinverterM

32-bit MCU
AURIX™

Microcontrollers

CANIntelligent powerswitches and modules

DC-DC

Current sensing

Wireless

Hall latches

USB
EtherCAT

LEDs
Output signal

Communications

Radar sensor
Sensor interface
XMC4xxx

Accelerometer

Pressure sensor
Light/optical sensor

3D image sensor
Sensors

Sensing

WBG semiconductors

Gyro

Actuators

Powermanagement ICs

Human-device
interface

Pushbutton

USB-C controllers
and peripherals

Position sensing
Angle sensor

Click here to learn more:
www.infineon.com/aurix
www.infineon.com/motix-mcu

www.infineon.com/psoc
www.infineon.com/traveo

Supportwww.infineon.com/xmc
www.infineon.com/mtb

320

Solutions

AURIX™ microcontroller

Applications

Microcontroller PDH partner

15-300 V MOSFETs

Preferred Design Houses (PDH) and software resellers –AURIX™ Traveo and PSoC™, AURIX™ tools and software

500-950 V MOSFETs

AURIX™ Tools and Software

Digital isolators

AURIX™ Tools

Microcontrollers‒ AURIX™ Free Tools‒ Calibration/Measurement/Prototyping‒ Compilers‒ Debugger, Test Tools‒ Flash Tools‒ Simulation/Modelling‒ SW Automation/Autocoding

USB-C controllers
and peripherals‒ AURIX™ Applications software‒ Autosar‒ Non-Autosar OS/RTOS‒ Middleware‒ Communication and connectivity‒ Bootloader/OTA‒ Safety

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

AURIX™ Embedded Software

Gate-driver ICs

To enable customers to achieve optimal performance when using the powerful AURIX™ architecture, Infineon has built
a network of strong partnerships with companies highly specialized in multicore software development. Infineon’s
multicore partners can offer the best multicore expertise and tools on the market for each stage of the software design
process, covering everything from the initial multicore knowledge acquisition phase to the final optimization of themulticore software.

‒ Project management and projectspecific application support

Premium(Consultancy mode)
To be agreed between
customers and PDH‒ Specification of general softwarearchitecture, defining required layers,
control and data flow structure etc.
‒ Specification and implementation ofcustom device drivers‒ Optimization of software components
with regard to speed/code size

WBG semiconductors(Free of charge)

Infineon products/solutions‒ Technical interface and support
to the customerat customer‒ 24 h response time to the customer‒ Software testing‒ Support for project-specificSensors

Classic‒ Driving design at customer‒ Basic training for design teams

functional safety engineering‒ Project-specific support for
security solution‒ Safety support‒ Security support‒ Multicore support

Support‒ First level customer support coveringPowermanagement ICs

Discover our new AURIX™ Tools and Software ecosystems where you can find everything you need within easy reachwww.infineon.com/aurixtools and www.infineon.com/aurixsoftware

Click here to learn more:
www.infineon.com/xmc
www.infineon.com/mtb

www.infineon.com/aurix
www.infineon.com/motix-mcu

www.infineon.com/psoc
www.infineon.com/traveo321500-950 V MOSFETs
Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Our microcontroller preferred design houses are a trusted partners’ ecosystem that extends the support force bytailoring their know-how to meet your specific needs. By partnering with one of our qualified preferred design houses,
you can be assured that you will receive expert advice and customized support to help you achieve your goals. Our
team of professionals brings added value to customer service, working together to optimize your design and help
you succeed in your business objectives. We understand that every customer is unique, which is why we offer tailoredsolutions to meet your specific needs. From product-specific support to application-specific advice, our preferred design
house is fully trained to use AURIX™, TRAVEO™ T2G, and automotive PSoC™ and provides a wealth of knowledge andexpertise to help you succeed. Together with our partners, we offer optimized customer support for systems using our
products. Our preferred design houses are committed to delivering exceptional service and support to ensure yoursuccess. So why wait? Contact us today to learn more about how our preferred design house can help you achieve yourgoals and take your business to the next level.

Gate-driver ICs

Empower your innovations with MCU experts.

Digital isolators

Preferred Design Houses – PDH

15-300 V MOSFETs

Applications

Solutions

AURIX™ microcontroller

SupportFeatures and benefits
Key features

Customer benefits– To be agreed between customers and PDH– First level customer support covering Infineon products and solutions– Technical interface and support to the customer– Driving design at customer– Basic training for design teams at customer– 24 h response time to the customer– Project management and project-specific application support– Specification of general software architecture, defining required layers,
control and data flow structure etc– Specification and implementation of custom device drivers andproject-specific application support– Optimization of software components with regards to speed/code size
– Software testing– Functional safety engineering and project-specific support for security solution– Project-specific support for security solution– Safety, security, Multicore, and Arm support– Project-specific support for security solution

Click here to learn more:
www.infineon.com/xmc
www.infineon.com/mtb

www.infineon.com/aurix
www.infineon.com/motix-mcu

www.infineon.com/psoc
www.infineon.com/traveo322

Applications

Solutions

TRAVEO™ T2G portfolio

15-300 V MOSFETs

TRAVEO™ T2G portfolio

500-950 V MOSFETs
Gate-driver ICs

SIL Level

Packages

Temperature ranges

HSM

eMMC Channels

I2S Channel

LIN Channel

SMIF (SPI/HyperBus)

CXPI Channel

SCB Channel

Ethernet 100/1000 Mbit

CAN/CAN FD Channels

ADC Channels

GPIO

SRAM [kB]

Flash (Code + Work) [kB]

Main Core frequency [MHz]Supply Voltage [V]Product type

Thanks to its special features, the TRAVEO™ T2G family family is the perfectmatch for industrial applications. With processing power and network
connectivity built into a single Arm® Cortex®- M4F and dual Cortex®- M7F, the
TRAVEO™ T2G family comes up with an enhanced performance up to 1500
DMIPS and a high-performance CPU operating up to 350 MHz.

160

1088 + 96

128

78

39

6

no

8

0

-

7

-

0

Yes

E

100-LQFPASIL-BCYT2B78CADQ0AZEGS 2,7 to 5,51601088 + 96

128

152

64

6

no

8

0

-

8

-

0

Yes

E

176-LQFPASIL-BCYT2B95CACQ0AZEGS 2,7 to 5,51602112 + 128

256

78

39

8

no

8

4

-

9

-

0

Yes

E

100-LQFPASIL-BCYT2B98CACQ0AZEGS 2,7 to 5,51602112 + 128

256

152

64

8

no

8

4

-

12

-

0

Yes

E

176-LQFPASIL-BCYT3BB8CEBQ0AESGS 2,7 to 5,52504160 + 256

768

148

64

8

1

10

0

1

16

TX 3ch, RX 3ch 1(3 instances)

Yes

S

176-TEQFP ASIL-B

CYT3BBBCEBQ0BZEGS

250

4160 + 256

768

220

72

8

1

11

0

1

16

TX 3ch, RX 3ch 1(3 instances)

Yes

E

272-BGA

Digital isolators

TRAVEO™ T2G CYT2B7 series
CYT2B75CADQ0AZEGS 2,7 to 5,5

IGBT discretes andsilicon power diodes

TRAVEO™ T2G CYT2B9 series

TRAVEO™ T2G CYT4BF series

ASIL-BIntelligent powerswitches and modules

2,7 to 5,5

TRAVEO™ T2G CYT4BF series
CYT4BF8CEDQ0AEEGS 2,7 to 5,53508384 + 256

1024

148

81

10

1

10

0

1

17

TX 3ch, RX 2ch 1(3 instances)

Yes

E

176-TEQFP ASIL-B

CYT4BFCCJDQ0BZEGS 2,7 to 5,53508384 + 256

1024

240

86

10

2

11

0

1

20

TX 3ch, RX 2ch 1(3 instances)

Yes

E

320-BGA

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

ASIL-B

Click here to learn more:
www.infineon.com/aurix
www.infineon.com/motix-mcu

www.infineon.com/psoc
www.infineon.com/traveo

Supportwww.infineon.com/xmc
www.infineon.com/mtb

323

Solutions

TRAVEO™ T2G portfolio

TRAVEO™T2G
clusterComing soon

Coming soonCYT4DNCYT4BFCYT2BL
Cortex®-M4
160 MHz,
4 MB flash
512kB RAM64-176 pins
LQFPTRAVEO™ T2G body

500-950 V MOSFETs
Microcontrollers

CYT2B9Cortex®-M4
160 MHz,
2 MB flash
256 kB RAM
64-176 pins
LQFP

CYT3DL
Cortex®-M7
240 MHz,
4 MB flash
512 kB RAM
216 pin TEQFP
272-ball BGA

Body/gateway infotainment

CYT2B6
Cortex®-M4
80 MHz,512 kB flash
64 kB RAM64-100 pins
LQFP

CYT2B7
Cortex®-M4
160MHz,
1 MB flash
128 kB RAM
64-176 pinsLQFP

CYT2CL
Cortex®-M4
160 MHz,2 M / 4 M flash
144-/176 pin
LQFP

2 x Cortex®-M7
320 MHz,
6 MB flash
896 kB RAM
TEQFP
327-ball BGA

TRAVEO™ T2G body

USB-C controllers
and peripherals

CYT3BB
2 x Cortex®-M7
250 MHz,512 kB RAM
100-176 pins4
TEQFP
272-ball BGA7

2 x Cortex®-M7
350 MHz,
8 MB flash
1024 kB RAM
176 TEQFP
272-300
ball BGA7IGBT discretes andsilicon power diodes

CYT4EN

Instrument cluster, HUD, lighting, other display

CYT6BJ

Digital isolators

TRAVEO™ T2G graphics

Intelligent powerswitches and modules

TRAVEO™ T2G body high

TRAVEO™ T2G body entry

Gate-driver ICs

Infineon TRAVEO™ T2G MCUs are suitable for connected car applications with their high-performance 32-bit Arm®
Cortex®-M4F and M7F CPUs operating up to 350 MHz. The low-power MCUs provide great connectivity capabilities like
CAN FD, CXPI, Ethernet, and FlexRay for faster communication and increased data bandwidth. TRAVEO™ T2G offers
high-speed SPI (single, dual, quad, or octal) or HYPERBUS™ interface for external memory interface, a Secure Digital
High Capacity (SDHC) interface supporting embedded Multimedia Card (eMMC), Secure Digital (SD), or Secure Digital
Input Output (SDIO), as well as Inter-IC Sound (I2S) interfaces to connect digital audio devices in the high-end series(CYT4BF series). Infineon’s TRAVEO™ T2G Body line-up (CYT2B.../CYT3B.../CYT4B....) for the body segment is a good
choice for a wide variety of applications e.g., HVAC systems, seat control units, immobilizers, TPMS sensors, door control
units, central gateways, and body control modules. The TRAVEO™ T2G Cluster microcontroller family (CYT2C.../CYT3D.../CYT4D...) is a dedicated line-up for applications such as instrument clusters, head-up displays, digital mirrors, HVAC
systems with displays, and matrix LED headlight control.

15-300 V MOSFETs

Applications

TRAVEO™ T2G portfolio

TRAVE0™ T2G body entry key features and benefits
Customer benefits– Single Arm® Cortex® - M4F TM running up to 160 MHz delivering 200 DMIPS– First level customer support covering Infineon products and solutions– Operating voltage 2.7 to 5.5 V– Up to 8 CAN FD channels/Up to 12 LIN channels/– Best-in-class performance enabling ASIL-B designs– Backward compatibility with CYT3B/CYT4B family and data flow structure etc.
– A/B swap software update over the air support– Best-in-class power consumption

Up to 4 CXPI channels iving design at customer

WBG semiconductors

Key features

Powermanagement ICs

CYT2B6/CYT2B7/CYT2B9/CYT2BL– ISO 26262 ASIL-B support eVita Full and ARM° Cortee-M0+
for HSM security customer

Sensors– AUTOSAR 4.2 support– 125°C temperature support response time to the customer

TRAVE0™ T2G body high key features and benefits
SupportCYT2B6/CYT2B7/CYT2B9/CYT2BL
Key features

Customer benefits– Dual Arm® Cortex® - M7 running up to 350 MHz delivering 1500 DMIPS– Up to 8 MB flash and up to 1 MB SRAM
– Up to 1 Gbit Ethernet 2 channels and 10 CAN FD channels– Up to 8 CAN FD channels/Up to 12 LIN channels/– Up to 4 CXPI channels– ISO 26262 ASIL-B support eVita Full and– Best-in-class performance enabling ASIL-B designs– Backward compatibility with CYT2B family– A/B swap software update over the air support– Best-in-class power consumptionArm® Cortex®-M0+ for HSM security customer– AUTOSAR 4.2 support– 125°C temperature support– 125°C temperature support response time to the customer

Click here to learn more:
www.infineon.com/xmc
www.infineon.com/mtb

www.infineon.com/aurix
www.infineon.com/motix-mcu

www.infineon.com/psoc
www.infineon.com/traveo324

Solutions

TRAVEO™ T2G portfolio

Applications

TRAVEO™ T2G kits

15-300 V MOSFETsCYTVII-B-E-BB‒ The CYTVII-B-E-BB is a generic base board that can be connected to500-950 V MOSFETs

compatible TRAVEO™ T2G entry or high-end evaluation boards so as toextend its functionality‒ Connects to most CYTVII-B-E-xxx and CYTVII-B-H-xxx evaluation boards

Gate-driver ICs

www.infineon.com/cms/en/product/evaluation-boards/cytvii-b-e-bb

CYTVII-B-E-176-SO‒ The CYTVII-B-E-176-SO evaluation board is based on the TRAVEO™ T2GDigital isolators

entry family of devices.
‒ TRAVEO™ T2G is CYT2B78CADESIGBT discretes andsilicon power diodes

www.infineon.com/cms/en/product/evaluation-boards/cytvii-b-e-176-so

Intelligent powerswitches and modules

CYTVII-B-E-1M-SK‒ The CYTVII-B-E-1M-SK is a low-cost easy-to-use evaluation board basedon the TRAVEO™ T2G entry family of devices.

Microcontrollers‒ TRAVEO™ T2G CYT2B75CADES MCU‒ Designed in an Arduino form factor so that users can connect many
off-the-shelf Arduino shields to it, to expand its functionality

USB-C controllers
and peripherals

www.infineon.com/cms/en/product/evaluation-boards/cytvii-b-e-1m-sk

CYTVII-B-H-8M-320-CPU

Powermanagement ICs‒ The CYTVII-B-H-8M-320-CPU evaluation board is based on the TRAVEO™ T2G
high-end family of devices.
‒ TRAVEO™ T2G CYT4BFCCHCES MCU‒ Audio, Ethernet, SD Card, SMIF

Sensors

WBG semiconductors

www.infineon.com/cms/en/product/evaluation-boards/cytvii-b-h-8m-320-cpu

Click here to learn more:
www.infineon.com/aurix
www.infineon.com/motix-mcu

www.infineon.com/psoc
www.infineon.com/traveo

Supportwww.infineon.com/xmc
www.infineon.com/mtb

325

Solutions

AURIX™ microcontroller

Applications

TRAVEO™ T2G kits

15-300 V MOSFETs

KIT_T2G-B-E_LITE‒ TRAVEO Body Entry Lite kit‒ Arduino compatible connectors, Shield2Go connector,

500-950 V MOSFETs

mikroBUS™ connector‒ Fully supported by Modutoolbox

Gate-driver ICs

www.infineon.com/cms/en/product/evaluation-boards/kit_t2g-b-e_lite

KIT_T2G-B-H_LITE

Digital isolators‒ TRAVEO Body High Lite kit‒ Arduino compatible connectors, Shield2Go connector,

IGBT discretes andsilicon power diodes

mikroBUS™ connector‒ Fully supported by Modutoolbox

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

www.infineon.com/cms/en/product/evaluation-boards/kit_t2g-b-h_lite

Click here to learn more:
www.infineon.com/aurix
www.infineon.com/motix-mcu

www.infineon.com/psoc
www.infineon.com/traveo

Supportwww.infineon.com/xmc
www.infineon.com/mtb

326

Solutions

MOTIX™ 32-bit motor control SoC

TLE984x

TLE985x

TLE985x, TLE986x, TLE988x

TLE987x, TLE989x

ControllerArm® Cortex®-M0Arm® Cortex®-M0Arm® Cortex®-M0/M3

Arm® Cortex®-M3

Core frequency

25/40 MHz

40 MHz20-60 MHz

24-60 MHz

Flash size

36-64 kByte

48-64 kByte

36-256 kByte

36-256 kByte

Driver stage

Relay dHalf-bridge for NFET

H-bridge for NFET

B6 brigde for NFET

PWM, LIN

PWM, LIN, CAN (FD)

PWM, LIN, CAN (FD)Communication interface PWM, LIN
Temperature≤ 150°C≤ 175°C≤ 175°C≤ 175°C

ISO 26262-compliance

QM

QM

QM, ASIL B

QM, ASIL B

Packages

VQFN-48

VQFN-48

VQFN-48, TQFP-48

VQFN-48, TQFP-48, LQFP-64

IGBT discretes andsilicon power diodes

Product families

Digital isolators

MOTIX™ 32-bit motor control SoC MOTIX™ 32-bit motor control SoC MOTIX™ 32-bit motor control SoC MOTIX™ 32-bit motor control SoC
with integrated relay driverwith integrated half-bridge driver with integrated h-bridge driverwith integrated 3-phase bridge
driver– High levels of system reliability– Reduced cost
– Supports multiple and flexible designs with minimal effort– Space saving– Energy savingArm® Cortex®-M– Compact package with 7x7 mm footprint (VQFN-48/TQFP-48)

Microcontrollers

Customer benefits– Extensive diagnostics and protections embedded within the system-on-chip– Move to customer benefits and make it the first bullet point– Platform based approach with compatible software between the product families– Data processing, actuation and sensing integrated into the product with 32-bit

Intelligent powerswitches and modules

Features and benefits
Key features– Intelligent power saving modes including stop and sleep mode and energy ma-

MOTIX™ MCU (SoC)

PWM
LIN
CAN (FD)InterfaceUni-direction(DC brush motor)
orBridge driveror
Relay driver

Supporting functionalityM

2-phase(DC brush motor)or3-phaseM (Brushless DC motor)-BLDC-In addition to tools, the MOTIX™ Low-Level Driverand Motor Control Library for optimized application
performance is also part of Infineon’s system solution.

Sensors

Position measurement
Switch panel inputs
Output driver

MOSFET
or
Relay

Power
management ICs

M
Discrete control
orMicrocontroller

MOTIX™ 32-bit motor control (SoC) solutions aresupported by a complete development tool chain
provided by Infineon and third-party vendors. Infineons’design-in tools include configuration tools, simulationand modeling tools, finder and selection tools, andutilities for free.

WBG semiconductors

PowersupplyClick here to learn more:
www.infineon.com/xmc
www.infineon.com/mtb

www.infineon.com/aurix
www.infineon.com/motix-mcu

www.infineon.com/psoc
www.infineon.com/traveo

SupportInput
signals

USB-C controllers
and peripherals

nagement for external sensors (on demand)+12 V frombattery

500-950 V MOSFETs

Infineon‘s MOTIX™ 32-bit motor contol SoC include a 32-bit Arm® Cortex®-M microcontroller, a voltage regulator, thecommunication interfaces, along with the driving stages for motor control applications. These system-on-chip solutions
offer an unmatched level of integration of all functions required to sense, control, and actuate a motor. They save spaceand energy, improve the overall system reliability through advanced diagnosis features, and reduce the overall cost due toa minimum number of external components. They perfectly fit a range of DC and BLDC motor control applications where asmall package form factor and a minimum number of external components are essential.

Gate-driver ICs

System-on-chip solution for motor control applications

15-300 V MOSFETs

Applications

MOTIX™ 32-bit motor control SoC

327

Solutions

BLDC Motor Control Shield
for Arduino

Applications

BLDC Motor Control Shield for Arduino

15-300 V MOSFETs

3-phase motor control shield with MOTIX™ TLE9879QXA40Hall sensor
interfaceGate-driver ICs

n.u.
n.u.
n.u.
n.u.
CHIP SEL1
CHIP SEL2CHIP SEL3
CHIP SEL4

Phase 1
Phase 2

MOTIX™
TLE9879QXA40

Phase 3
L3

Digital isolators

GND

L2
VBAT

L1

IGBT discretes andsilicon power diodes

3-phaseMOSFETdriverSHUNTIntelligent powerswitches and modules

Customer benefits– Easy-to-use API, allowing the user to quickly setup an application– High performance BLDC motor control in form of the TLE987x chip

Microcontrollers– Implemented motor control algorithms (FOC, BEMF, Hall)– Controlled over Arduino via SPI– Compatible with the Arduino Uno or the Infineon XMC™ baseboard– Up to four shields can be used simultaneously– Each shield can be controlled independently– Motor parameters can be set for each shield individually

Sensors

WBG semiconductors

Our BLDC Shield for Arduino comes with a library which
includes a collection of code that makes it easy for you to
run your project. The Arduino library offers an intuitive
API to quickly setup and configure an application.

USB-C controllers
and peripherals

Key features

n.u.
n.u.
n.u.
n.u.
n.u.
n.u.

n.u.
GND
GND
n.u.
n.u.
RESET

Features and benefitsPowermanagement ICs

The firmware can be changed using the SWD Interface
Additional connectors for voltage supply, motor-phases
and hall sensors speed up the evaluation.

LIN

The shield implements three different
advanced motor control algorithms:‒ Sensorless field-oriented control (FOC)‒ Block commutation with back EMF (BEMF)‒ Hall based block commutation (HALL)

AUTO ADDRn.u.
n.u.
SPI MOSISPI MISOSPI CLK
GND
n.u.

SW debuginterface

500-950 V MOSFETs

The BLDC Shield for Arduino uses TLE9879QXA40, a part of the MOTIX™ TLE987x family of the Infineon MOTIX™ MCU (SoC)
portfolio. It enables the shield to drive 3-phase BLDC motors with a variety of different features. One Arduino baseboard can control up to four BLDC shields via SPI. The BLDC Shield firmware provides auto-addressing functionality.
Every shield in the stack can be controlled independently and run completely different motor control algorithms if
desired.

Click here to learn more:
www.infineon.com/aurix
www.infineon.com/motix-mcu

www.infineon.com/psoc
www.infineon.com/traveo

Supportwww.infineon.com/xmc
www.infineon.com/mtb

328

Solutions

TLE9893-2QK Evaluation Kit

Applications

TLE9893-2QK Evaluation Kit

15-300 V MOSFETs

BLDC motor control kit with MOTIX™ TLE9893-2QKW62S

Signal Pin Headers

CAN
Termination

PI-filter

POTI
JumperOptions

FIFO

VSBridge driver

P2.5
P2.6

SL

PHASE 1CSA

PHASE 2Integrated
Half-Bridge

PHASE 3

TLE9893-2QK

MON1

IAUC60N04
S6N031H

SignalPin
Headers(P2.0)(P2.1)
P2.2
P2.3
P2.4
P2.5
P2.6
P2.7
P2.8
P2.9
GND

Digital isolators

Rev. polarity
protection

Phase 3

IGBT discretes andsilicon power diodes

TMS, P0.0, P0.10

LEDsIntelligent powerswitches and modules

Differential
receiverSignal Pin Headers
On-board debugger
with XMC 4200

Microcontrollers

ENCODERSW Debuginterface
P0.0
P0.1
P.02
P0.3
P0.4
P0.5
P0.6
P0.7
P0.8
P0.9
P0.10
GND
P1.0
P1.1
P1.2
P1.3
P1.4
GND

SPI, HALL, TMR

RESET

USB

4 x External
Motor
Control
Sensors

LED 0.1
LED 0.2
LED 0.3
LED 1.0
LED 1.1
LED 1.2

Shunt

UART1 P1.1, P1.2

Features and benefits– 3-phase MOSFET bridge for BLDC motor control with safe switch off path
– CAN-FD protocol handler and transceiver– Sensorless and sensor-based BLDC motor control– Onboard debug interface

Customer benefits– High-performance BLDC motor control in form of the TLE989x chip
– Easy evaluation and fast prototyping– Availability of various software example code

USB-C controllers
and peripherals

Key features

Sensors

Use Infineon Developer Center to find helpful
information such as data sheets, user manual,
getting started guide, application notes and design-intools like MOTIX™ MCU Configuration Wizard. In addition,
if you register this Evaluation Kit, you can get access to
PCB design files.

Powermanagement ICs

Phase 2Gate-driver ICs

Phase 1WBG semiconductors

Motor
Power
Stage
Connector

VBAT

CAN
CANH
CANL

VBAT
VS
VSD
VDH
VDDEXT
VDDP
GND
FIFO
MON1
MON2
MON3
CANH
CANL
GND

GND

VDH

500-950 V MOSFETs

The TLE9893-2QK Evaluation Kit allows a complete evaluation of all functions and peripherals of the TLE98932QKW62S, allowing a direct connection of a BLDC motor over MOSFETs in a B6-bridge configuration. The TLE98932QKW62S is a super set device which features all the functionalities of the MOTIX™ TLE989x family.

Click here to learn more:
www.infineon.com/aurix
www.infineon.com/motix-mcu

www.infineon.com/psoc
www.infineon.com/traveo

Supportwww.infineon.com/xmc
www.infineon.com/mtb

329

Solutions

CAN-FD transceivers

Applications

CAN-FD transceivers

15-300 V MOSFETs

High- and low-speed CAN-FD Transceivers for automotive
and many other applications

500-950 V MOSFETs

The automotive industry recently established the CAN-FD (Flexible data rate) protocol for faster CAN communication
up to 5Mbit/s and CAN PN (Partial Networking) for improved energy efficiency.

Gate-driver ICs

Different transceiver types are used depending on the respective network architecture and the related ECU supply
path. Infineon transceivers ensure reliable communication and help minimize the current consumption. The products
provide the best value through high performance, ruggedness, and reliability.

Key features

Key benefits– Transmission rates up to 5 Mbit/s ISO11898 compliant– Low-power modes– Receive-only mode
– Standby/sleep mode
– Bus wake up– Thermal protection– CAN FD compliance– Low current consumption

Digital isolators

Features and benefits– Excellent EMI performance and robustness

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes– Pin-to-pin replacements for industry-standard parts

Block diagram TLE9250V

CANH
CANL

5

7
Outputstage

6

Driver1

Timeout

Temp.
protection

8

ReceiverTxD

NEN

USB-C controllers
and peripherals

Modecontrol

VCC
VIO

Microcontrollers

3

Transmitter

VCC/2
=

Comparator
RxD

PG-DSO-8-65

Powermanagement ICs

4

PG-TSON-8-1

TLE9250SJ_GRN

TLE9250LE_GRN

TLE9250VSJ_GRN

TLE9250VLE_GRN

TLE9250XSJ_GRN

TLE9250XLE_GRN

TLE9251SJ_GRN

TLE9251LE_GRN

TLE9251VSJ_GRN

TLE9251VLE_GRN

WBG semiconductors

2

Sensors

TLE9251VLE

Click here to learn more:
www.infineon.com/xmc
www.infineon.com/mtb

www.infineon.com/aurix
www.infineon.com/motix-mcu

www.infineon.com/psoc
www.infineon.com/traveo

Support

GND

*

330

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

15-300 V MOSFETs

Applications

Solutions

Microcontroller support

www.infineon.com/xmc
www.infineon.com/xmc1000
www.infineon.com/xmc4000
www.infineon.com/aurix
www.infineon.com/makers

XMC™ MCUs ecosystem and enablement –kits, board, tools and software
Boards and kits:www.infineon.com/xmc-dev
www.infineon.com/connectivitykit
www.infineon.com/ethercat

XMC SC Wireless power controller:

Ecosystem and tools:
www.infineon.com/xmc-ecosystem

Sensorswww.infineon.com/xmcscwirelesspowercontrollers
www.infineon.com/motix-mcu

Powermanagement ICs

Further information, datasheets and documents

WBG semiconductors

One platform, countless solutions

USB-C controllers
and peripherals

Microcontrollers

Infineon support forindustrial microcontrollers

www.infineon.com/smps
www.infineon.com/xxxxxxx

www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

SupportClick here to learn more:Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules
USB-C controllers
and peripherals‒ Peripheral controllers for USB 5Gbps– EZ-USB™ CX3 - MIPI CSI-2 to USB 5Gbps camera

WBG semiconductors

Powermanagement ICs

controllers– EZ-USB™ FX3 - USB 5Gbps peripheral controllers– EZ-USB™ SX3 - FIFO to USB 5Gbps controllers‒ USB 2.0 peripheral controllers– EZ-USB™ serial bridge controller‒ USB hub and USB Type-C port controllers– EZ-USB™ HX3– EZ-USB™ HX2LP and HX2VL– EZ-USB™ HX3PD

Sensors‒ Moving to USB-C with EZ-PD™ family– USB-C charging port controllers– USB-C high voltage microcontrollers‒ USB-C power delivery controllers– EZ-PD™ CCG8 – USB-C PD controller– EZ-PD™ CMG2 – USB-C EMCA controller‒ USB-C AC-DC and DC-DC charging solutions– EZ-PD™ CCG7DC – USB-C PD and DC-DC controller– EZ-PD™ PAG2 – USB-C PD and DC-DC controller

Microcontrollers

USB-C controllers and peripherals

Click here to learn more:
www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

Supportwww.infineon.com/smps
www.infineon.com/xxxxxxx

332

Solutions

Moving to USB-C

Gate-driver ICs

More and more products in consumer, industrial, and communications segments are adopting USB-C ports to source
power. Infineon offers dedicated solutions to integrate USB-C ports into customers’ embedded applications. Typicaluse cases include smart speakers, cameras, headphones, game consoles, power tools, VR headsets, and other portableelectronics and home appliances. As the leader in USB-C end-to-end solutions, Infineon provides a comprehensive
portfolio of solutions for USB-C chargers and power adapters.

Digital isolators

System approach:‒ Market-proven USB-C power delivery stack (USB-C PD)‒ Complete and easy-to-use design portfolio to build robust, efficient and cost-effective system solutions‒ Robust evaluation kits for quick prototyping

Intelligent powerswitches and modules

EZ-PD™
PMG1

Microcontrollers

EZ-PD™
BCR

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Or do you need additional control and want to add
some extra functions to your device with a
USB-C port controller + MCU in a single-chip solution?

IGBT discretes andsilicon power diodes

The EZ-PD™ portfolio includes two different families of solutions to help you easily integrate USB-C into yourembedded application: EZ-PD™ PMG1 (Power Delivery Microcontroller Gen 1) and EZ-PD™ BCR (Barrel Connector
Replacement).

Are you looking for a plug-and-play solution to
replace an old barrel connector or legacy
USB connector with USB-C?

500-950 V MOSFETs

A wide portfolio for your easy transition to the new universal connector

15-300 V MOSFETs

Applications

Moving to USB-C with EZ-PD™ family

Click here to learn more:
www.infineon.com/ez-pd-bcr
www.infineon.com/superspeed

www.infineon.com/usbhubs
www.infineon.com/usb2.0

Supportwww.infineon.com/usb
www.infineon.com/ez-pd-pmg1

333Solutions

Moving to USB-C

EZ-PD™ BCR is a highly-integrated pre-programmed USB Type-C charging port controller targeting all electronic
devices with legacy barrel connectors up to 100 W or USB micro-B connectors. It easily adds USB-C power consumer
capability to a device, allowing it to be powered by any USB-C power source including USB-C chargers, power adapters,
power banks, and in-wall or in-car charging ports.

Digital isolators

Gate-driver ICs

EZ-PD™ BCR is compliant with the latest Type-C and USB PD 3.0 standards, it allows designers to quickly convert theirdevices’ power input from a barrel connector to a USB-C connector without invasive changes to their existing designs.
It contains a market-proven, fully-automated USB power delivery policy manager that interoperates with virtually any
USB-C power source. To safeguard against system-level fault conditions, EZ-PD BCR™ controllers integrate various
protection circuitries including VBus-to-CC short, overvoltage, overcurrent and ESD.
No expert knowledge of the USB-C and power delivery standards or firmware development is required to develop arobust USB-C powered system with EZ-PD™ BCR.

Legacychargerdetection

1 x SCB(I2C)
USB PD subsystem

Baseband MAC

Baseband PHY

USB-PD UFP

Integrated resistors(RD, RD-DB)

Fault detection

1 x 8-bit SAR ADC

30-V regulator

OVP/UVP/OCP

PMOS gate driver

VBUS -CCshort protection

VBUS discharge

ESD protection

Optional legacy charger
detection and hostprogramming interface
offer additional solution
value and design flexibilityPowermanagement ICs

Comm.
channelUSB-C controllers
and peripherals

EZ-PD™ BCR

All protection circuity
integrated – overvoltage,undervoltage, overcurrent,
VBus-short, ESD – provide arobust, fault-tolerant USB-C
system solution

Sensors

High-power analog
components included on chip
– LDO, gate driver, discharge
FET – save BOM cost andreduce solution footprint

Offered in a space-saving
16-mm2 package andsupports extended
temperature -40°C to 105°C

WBG semiconductors

A complete USB-C subsystem– transceiver, protocol stack,
USB-PD policy manager –runs autonomously without
a need to develop firmware

Intelligent powerswitches and modules– Area and BOM saving– Shorter development cycle, faster time to market– No implementation risk
– Configurability, product differentiation– Pre-certified silicon to support USB logo certification– No steep learning curve– Suitable for virtually any commercial or industrial application

Microcontrollers

Key benefits– Highly integrated one-chip solutions– No firmware programming required– Market-proven solution with mature design tools– Availability of software utilities– USB-IF compliant and certified– No expert knowledge of USB-C or USB-PD required– Extended industrial temperature -40°C to 105°C

IGBT discretes andsilicon power diodes

Features and benefits
Key features

500-950 V MOSFETs

EZ-PD™ BCR: the easiest solution for moving to USB-C

15-300 V MOSFETs

Applications

USB-C charging port controllers

Click here to learn more:
www.infineon.com/ez-pd-bcr
www.infineon.com/superspeed

www.infineon.com/usbhubs
www.infineon.com/usb2.0

Supportwww.infineon.com/usb
www.infineon.com/ez-pd-pmg1

334

Applications

SolutionsMoving to USB-C

The wide portfolio offers different combinations of flash/RAMs sizes and features to address all possible needs:

Part number

CYPD3178-24LQXQCYPD3178-24LQXQT

USB PD role–

UFP (power sink)

UFP (power sink)

Programmable power supply (PPS)

✓

–

–

USB Type-C charging (5V at 0.5 A, 0.9 A, 1.5 A, 3 A)

✓

✓

✓

Legacy charging support (BC 1.2 and others)

✓

–

✓

USB data compatible

✓

✓

✓

VBUS gate driver

PFET

PFET

PFET

Supply voltage

3.0 V – 24.5 V

3.0 V – 24.5 V

3.0 V – 24.5 V

VBUS to CC short protection (20 V)

✓

✓

✓

OVP/UVP

✓​

✓​

✓​

OCP

✓

–

–

ESD protection on CC, D+/D-, ±8 kV (contact), ±15 kV (air)

✓

✓

✓

I2C Interface​

1

1

1

EZ-PD BCR HPI utility

✓

✓

✓

EZ-PD configuration utility

✓

–

–

500-950 V MOSFETs

EZ-PD™ BCR-Lite

CYPD3177-24LQXQCYPD3177-24LQXQT

Gate-driver ICs

EZ-PD™ BCRCYPD3176-24LQXQCYPD3176-24LQXQT

15-300 V MOSFETs

EZ-PD™ BCR family​
EZ-PD™ BCR-Plus

Digital isolators

Features​
Product name

IGBT discretes andsilicon power diodes

Boards

EZ-PD™ BCREVK CY4533

EZ-PD™ BCR-Plus
EVK CY4534

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

EZ-PD™ BCR-Lite
EVK CY4535

Intelligent powerswitches and modules

Once the preferred characteristics are identified, it is possible to get started with the product of choice byutilizing the available evaluation kits: they provide a USB Type-C receptacle to consume power from a charger
and then supply it over a terminal block. A barrel connector can be attached to this block using wires toconvert a barrel input to USB-C. In addition, selective GPIOs and I2C interface are available on headers to easily
control or monitor the BCR chip from an external microcontroller.

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Solutions

Moving to USB-C

Applications

USB-C high voltage microcontrollers

15-300 V MOSFETs

EZ-PD™ PMG1: the single-chip solution for moving to USB-C

500-950 V MOSFETs

Power Delivery Microcontroller Gen 1 (EZ-PD™ PMG1) is a high-voltage USB-C power delivery microcontroller (PD MCU)
targeted to any embedded system that provides/consumes power to/from a high-voltage USB-C PD port and leverages
the microcontroller to provide additional control capability.

Gate-driver ICs

The EZ-PD™ PMG1 family of devices has a market-proven USB power delivery stack, ensuring spec compliance andinteroperability. It’s the only high-voltage, programmable USB power delivery solution on the market today, andcomes with an integrated ARM® Cortex®-M0/M0+, up to 256 kB flash and 32 kB RAM, a USB full-speed device, andanalog and digital peripherals. With an SDK supported in ModusToolbox™, EZ-PD™ PMG1 family provides customers
with a unified firmware view, facilitating seamless migration between all EZ-PD™ PMG1 devices.

USB, Crypto, LDO
NFET gate drivers,
CAPSENSE™, 12-bit ADC,SCB 1), TCPWM 2)

PMG1-S3
1x PD DRP,
48QFN

256 KB /32 KB

Buck Boost, LDO,NFET gate drivers,
12-bit ADC,SCB 1), TCPWM 2)

PMG1-B1
1x PD DRP
48QFN

128 KB/16 KB

USB, Crypto, LDO
NFET gate drivers,
8-bit ADC,SCB 1), TCPWM 2)

PMG1-S2
1x PD DRP,
40QFN

128 KB/8 KB

PMG1-S1
1x PD DRP,
40QFN

PMG1-S0
1x PD Sink,
24QFN

ARM® Cortex®-M0 and 21.5 V VBUS
ARM® Cortex®-M0+ and 30 V VBUS

< 15
SCB stands for Serial Communication Block

< 20
2

< 25

< 30

< 55

64 KB/8 KB

GPIO#

TCPWM stands for Timer Counter Pulse Width Modulator

USB-C controllers
and peripherals

LDO,
PFET gate drivers,
8-bit ADC,SCB 1), TCPWM 2)

128 KB/12 KB

Microcontrollers

LDO,
PFET gate drivers,
8-bit ADC,SCB 1), TCPWM 2)

1

PMG1-S3
2x PD DRP
97BGA

IGBT discretes andsilicon power diodes

Flash/RAMs

Intelligent powerswitches and modules

Features

Digital isolators

The wide portfolio offers different combinations of flash/RAMs sizes and features to address all possible needs:– Area and BOM saving– Faster time-to-market– No implementation risk
– Programmability, product differentiation– Interoperability– Suitable for virtually any commercial or industrial application

WBG semiconductors

Key benefits– Highly-integrated single-chip solution, included high-voltage protection– Configuration utility and wide support material available– Market-proven solution with mature design tools– Integrated flash/MCU– USB-IF compliant and certified– Extended industrial temperature -40°C to 105°C

Sensors

Key features

Powermanagement ICs

Features and benefits

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Applications

SolutionsMoving to USB-C

Block diagram
Provider FET
VBUS

Consumer FET

NFET gate driver

15-300 V MOSFETs

System power –DC to DC converter
battery charger
battery

28 V LDO

12-bitSAR ADC

Comparators/
Opamp

CAPSENSE™

7-bit IDAC

Arm® Cortex®
M0

Flash
Capacitive touch
Programmable digital blocks
I2C, SPI, UART

DP/DM

BC 1.2
legacychargerdetectDigital isolators

GPIO x50(1.7 V - 5.5 V)
Ambient light

USB full
speed
deviceCryptoI/O subsystem

Accelerometer Temperature

USB-C

LED

Product portfolio

PMG1-S0

Arm® Cortex®-M0

64

12

12

-40 to 85

2.7

5.5

2

Rd, Rd-db

1

CYPM1011-24LQXIT

PMG1-S0

Arm® Cortex®-M0

64

12

12

-40 to 85

2.7

5.5

2

Rd, Rd-db

1

CYPM1111-40LQXI

PMG1-S1

Arm® Cortex®-M0

128

17

17

-40 to 85

2.7

5.5

4

Rp,Rd, Rd-db

1

CYPM1111-40LQXIT

PMG1-S1

Arm® Cortex®-M0

128

17

17

-40 to 85

2.7

5.5

4

Rp,Rd, Rd-db

1

CYPM1115-48LQXI

PMG1-B1

Arm® Cortex® -M0

128

21

21

-40 to 105

4

24

3

Rp, Rd1

CYPM1115-48LQXIT

PMG1-B1

Arm® Cortex® -M0

128

21

21

-40 to 105

4

24

3

Rp, Rd1

CYPM1116-48LQXI

PMG1-B1

Arm® Cortex® -M0

128

21

21

-40 to 105

4

24

3

Rp, Rd, Rd-db

1

CYPM1116-48LQXIT

PMG1-B1

Arm® Cortex® -M0

128

21

21

-40 to 105

4

24

3

Rp, Rd, Rd-db

1

CYPM1211-40LQXI

PMG1-S2

Arm® Cortex®-M0

128

20

20

-40 to 85

2.7

5.5

4

Rp,Rd, Rd-db

1

CYPM1211-40LQXIT

PMG1-S2

Arm® Cortex®-M0

128

20

20

-40 to 85

2.7

5.5

4

Rp,Rd, Rd-db

1

CYPM1211-42FNXI

PMG1-S2

Arm® Cortex®-M0

128

20

20

-40 to 85

2.7

5.5

4

Rp, Rd1

CYPM1211-42FNXIT

PMG1-S2

Arm® Cortex®-M0

128

20

20

-40 to 85

2.7

5.5

4

Rp, Rd1

CYPM1311-48LDXI

PMG1-S3

Arm® Cortex®-M0+

256

26

26

-40 to 85

2.7

5.5

7

Rp,Rd, Rd-db

1

CYPM1311-48LDXIT

PMG1-S3

Arm® Cortex®-M0+

256

26

26

-40 to 85

2.7

5.5

7

Rp,Rd, Rd-db

1

CYPM1321-97BZXI

PMG1-S3

Arm® Cortex® -M0+

256

50

50

-40 to 85

4

30

8

Rp, Rd, Rd-db

2

CYPM1321-97BZXIT

PMG1-S3

Arm® Cortex® -M0+

256

50

50

-40 to 85

4

30

8

Rp, Rd, Rd-db

2

CYPM1322-97BZXI

PMG1-S3

Arm® Cortex®-M0+

256

50

50

-40 to 85

2.7

5.5

8

Rp,Rd, Rd-db

2

CYPM1322-97BZXIT

PMG1-S3

Arm® Cortex®-M0+

256

50

50

-40 to 85

2.7

5.5

8

Rp,Rd, Rd-db

2Intelligent powerswitches and modules

Operatingtemperature range [°C]

Microcontrollers

CYPM1011-24LQXI

Operating Operating Serial comTermination Type-C
voltage min voltage munication
resistorports[V]max [V]
blocks

I/O
Pins

USB-C controllers
and peripherals

Flash GPI[kB]
Os

Power
management ICs

CPU

WBG semiconductors

Product
nameSensors

Part number

IGBT discretes andsilicon power diodes

Humidity

TCPWM

RAM

USB fullpower
deliveryGate-driver ICs

Vsense, Isense, Battery monitoring

Proximity

CC

VCONN

Motor

500-950 V MOSFETs

Programmable analog blocks

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Solutions

Moving to USB-C

Applications

Boards

EZ-PD™ PMG1-S2
CY7112 EVK

EZ-PD™ PMG1-S3
CY7113 EVK

EZ-PD™ PMG1-B1
EVAL_PMG1_B1_DRP

EZ-PD™ PMG1-S1
EVAL_PMG1_S1_
DRP

500-950 V MOSFETs

EZ-PD™ PMG1-S1
CY7111 EVK

EZ-PD™ PMG1-S3
EVAL_PMG1_S3_DUALDRP

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

Gate-driver ICs

EZ-PD™ PMG1-S0
CY7110 EVK

15-300 V MOSFETs

Once the preferred characteristics are identified, it is possible to get started with the product of choice by utilizing theavailable evaluation kits: they provide a USB Type-C receptacle to consume power from a charger and then supply itover a terminal block. A barrel connector can be attached to this block using wires to convert a barrel input to USB-C.
In addition, all the GPIOs and serial interfaces (UART, I2C, SPI) are available on connectors to easily integrate externalsensors and test the microcontroller functions.

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Solutions

USB-C PD controllers

Key benefits– Supports latest USB-C power delivery protocols– Offers programmable USB-C PD solution– Offers firmware upgradability with in-built flash– Support secure firmware update with hardware crypto– Integrates high-voltage circuits– Integrates VBUS fault protections– Offered in QFN, BGA, and WLCSP packages– Interoperability– Easy customization using software development kit (SDK)– Easy integration into your application– Programmability for higher flexibility and shorter time to market– Highly integrated dual/single port USB-C PD controllers for optimized are and BOM

USB-PD + AC-DC
controllers:
EZ-PD™ PAG1
EZ-PD™ PAG2

Cable

Dock

EZ-PD™ CCG2 USB-C port
controller(active cable)

EZ-PD™ CCG3 USB-C PD
port controller

Wireless charging:
WLC1515

EZ-PD™ CCG4 Two-port
EZ-PD™ CMG1 USB-C EMCA USB-C & PD
controller
EZ-PD™ CMG2 USB-C EMCA EZ-PD™ CCG5 Two-port
controller with EPR
USB-C PD
(passive cable)
EZ-PD™ CCG5C One-port
USB-C PD
EZ-USB™ HX3PD 10 Gbps
hub controller with USB
PD

Broad market electronics

EZ-PD™ CCG6DF Dual-port
USB-C PD
EZ-PD™ CCG6SF Singleport USB-C PD
EZ-PD™ CCG8 Dual-single
port controller

Sensors

WBG semiconductors

EZ-PD™ PMG1-S3

Notebook/PC

EZ-PD™ ACG1F Dual-single Move to USB-C:
EZ-PD™ BCR
port USB-C PD
EZ-PD™ PMG1
EZ-PD™ CCG5 Two-port
Wireless charging:
USB-C & PD
WLCx
EZ-PD™ CCG5C One-port
USB-C PD

USB-C controllers
and peripherals

USB-PD + DC-DC
controllers:
EZ-PD™ CCG7DC
EZ-PD™ CCG7SC

Power source (auto)
EZ-PD™ CCG3PA USB-C PD
controller
EZ-PD™ CCG7D Dual-port
USB-C PD + DCDC controller
EZ-PD™ CCG7S Singleport USB-C PD + DCDC
controllerPowermanagement ICs

Power source
USB-PD controllers:
EZ-PD™ CCG3PA
EZ-PD™ CCG3PA-NFET

Microcontrollers

Key features

Intelligent powerswitches and modules

Features and benefits

IGBT discretes andsilicon power diodes

Digital isolators

Infineon also offers AEC-Q100 certified versions of its controllers for automotive-grade performance.
As the leader in USB-C end-to-end solutions, Infineon also provides a comprehensive portfolio of solutions for USB-C
adapters and chargers.

500-950 V MOSFETs

USB-C is the universal connector of choice and has gained rapid industry support thanks to its flexibility to transmit
multiple data protocols such as USB4, Thunderbolt, HDMI, and simultaneously provide up to 240 Watts of power via
USB PD, the possibility to enable slim industrial designs and its easy-to-use connectors and cables. Its adoption also
has a significant impact on the environment, dramatically reducing the e-waste produced by the more than one million
tons of proprietary chargers that get shipped every year. Infineon’s EZ-PD™ portfolio is the industry’s most complete
portfolio of USB-C power delivery solutions, enabling more robust end-to-end power delivery and charging solutions
for laptop and mobile devices. USB-C power delivery standard supports fast charging up to 240 watts, USB4 data
speeds and DisplayPort connectivity over an industry-standard USB-C connector for transmitting both data and power
on a single cable.

Gate-driver ICs

Leading the industry with over one billion USB-C devices shipped

15-300 V MOSFETs

Applications

USB-C power delivery controllers

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Solutions

USB-C PD controllers

Applications

EZ-PD™ CCG8 – USB-C controller

15-300 V MOSFETs

USB-C power delivery solution for PC host with EPR

Gate-driver ICs

500-950 V MOSFETs

EZ-PD™ CCG8 is the first in the industry dual/single-port USB Type-C controller complying with the latest USB-C andpower delivery (PD) specifications that offers a complete USB-C and PD port control solution for PCs and notebooks.
It integrates a discrete N-channel field effect transistor (NFET) gate driver with fault protection and slew rate, a 32-bit
48 MHz Arm® Cortex®-M0 Plus processor and a complete Type-C transceiver including termination resistors Rp, Rd,
and dead battery Rd. While EZ-PD™ CCG8D (dual port) is available in a 97-BGA package, EZ-PD™ CCG8S (single port) is
only available in a 48-pin QFN package. Both can be requested in tray or tape and reel packing options, and support
extended power range (EPR) up to 28 V without needing external components.
Block diagram
Data lanes
V BUS

Digital isolators

8

Retimer

Consumer load SW

RSENSE

Provider NFETs

CSA

GPIO

VBUS provider load switch controller
OVP/OCP/RCP/SCP

IGBT discretes andsilicon power diodes

5V
I2C
GPIOs
(1.8 V)

SBU

SoC

AUX
DBG

3:1 Mux + orientation

USB-C

30 V regulator/OVP/discharge
LSx

CC

ARM® Cortex® M0+

3x I2C/SPI/UART

32

GPIO
GPIO/ADC/TCPWM
256 KB
FLASH

96 KB
SROM

32 KB
SRAM

EZ-PD™
CCG8S

Microcontrollers

I2CIntelligent powerswitches and modules

USB-PD/VCONN

4– USB-C and PD 3.1 with EPR up to 28 V supporting USB3 and USB4,
Thunderbolt, display port alternate mode platforms– 32-bit, 48 MHz Arm® Cortex®-M0+ processor– Integrates a complete Type-C transceiver and a load switch controller for

Key benefits– Reduced area and BOM thanks to the high degree of integration– Ideal for EPR-based DRP solutions– Programmable solution which allows the implementation of custom features

Powermanagement ICs

Key features

USB-C controllers
and peripherals

Features and benefits

driving NFETs on VBus provider path

– Slew rate controller to turn on the VBUS provider path
– Configurable hardware-controlled VBus overvoltage, undervoltage, overcurrent, short circuit, reverse current protection, and thermal shutdown

Sensors

WBG semiconductors– Integrated 3:1 SBU Muxes for alternate modes and closed chassis debug– Integrated digital and analog blocks

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Applications

Solutions

USB-C PD controllers

EZ-PD™ CMG2 – USB-C EMCA controller

15-300 V MOSFETs

EMCA controller with VBUS to CC short protection for passive USB-C cables

500-950 V MOSFETs

EZ-PD™ CMG2 is Infineon’s dedicated electronically marked cable assembly (EMCA) controller targeting passive nonThunderbolt and Thunderbolt Type-C cables. It offers integrated VBus-CC short protection up to 54 V, VBus-VCONN
short protection up to 54 V, power delivery 3.1, Type-C 2.1, and ESD protection, all these in a compact 9-ball WLCSP
package. EZ-PD™ CMG2 has a 47-byte storage space for vendor- and cable-specific configuration data and is designed
to operate from a 2.7 to 5.5 V VCONN supply range.

1uF

B1
1uF

VCONN1

C1
VCCD

A2

B1

VCONN2

VCONN1A2
VCONN2
1uF

NC

NC

CC

A1

A1

B2 VSSCCVSS

B2IGBT discretes andsilicon power diodes

EZ-PD™ CMG2

EZ-PD™ CMG2

A3, B3, C2, C3Type-C plug

Type-C plug

VCONN

1uF
C1
VCCD

Digital isolators

VCONN

Gate-driver ICs

Block diagram
Passive EMCA application - Single EZ-PD™ CMG2 chip per plug:

CC
SuperSpeed and Hi-Speed lines

Intelligent powerswitches and modules

GND

Passive EMCA application - Single EZ-PD™ CMG2 chip per cable:

VCONN

1uF

B1
1uF

VCONN1C1VCCD

Microcontrollers

VCONN

A2
VCONN2

1uF

A3, B3, C2, C3

EZ-PD™ CMG2
CYPD2803A0-09FNXIT
CC

Type-C plug

A1

B2 VSS

USB-C controllers
and peripherals

Type-C plug

NC

CCSuperSpeed and Hi-Speed linesPowermanagement ICs

GND

Key features

Key benefits– Supports USB PD 3.1 specification and USB Type-C specification version 2.1– Supports USB4, TBT4 and extended power range (EPR)– PD protocol– Integrated high-voltage protection on CC, VCONN1, and VCONN2 pins to protect– No programming required– Easy to use, faster design cycle– Robust solution with short protection up to 54 V

WBG semiconductors

Features and benefits

against accidental shorts to the VBus pin on the Type-C connector up to 54 V

– Integrated 47 bytes for storing vendor- and cable-specific configuration data
termination resistor RA on VCONN1 and VCONN2

Sensors– IEC ESD protection on VCONN and CC– Package: 9-ball WLCSPClick here to learn more:
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USB-C charging solutions

Gate-driver ICs

Infineon offers a one-stop shop for a wide variety of USB PD AC-DC and DC-DC conversion solutions for charger
adapters from 18 to 140 W. The portfolio includes a scalable PD controller architecture to support both single-port
and multi-port charger configurations. Our reference designs allow the quick and easy development of prototypes,
meaning customers can benefit from new, fast-charging adapter technology while reducing development costs andtime to market. Moreover, the high degree of programmability and the ability to support custom protocols and updates
enables a high degree of flexibility for customers. With decades of experience in the electronics industry, Infineon
drives the trend of adapter miniaturization without compromising product efficiency and performance.

CYPAP211A1-14SXIPrimary PWM controller

PAG2-P

N/A

N/A

N/A

0

N/A

N/A

-40 to 85

CYPAP211A1-14SXITPrimary PWM controller

PAG2-P

N/A

N/A

N/A

0

N/A

N/A

-40 to 85

CYPAP212A1-14SXIPrimary PWM controller

PAG2-P

N/A

N/A

N/A

0

N/A

N/A

-40 to 85

CYPAP212A1-14SXITPrimary PWM controller

PAG2-P

N/A

N/A

N/A

0

N/A

N/A

-40 to 85

CYPET121

Pulse edge transformer

PAG2-P

N/A

N/A

N/A

0

N/A

N/A

N/A

CYPAS212A1-32LQXQ

USB-PD + SR + PWM controller

PAG2S-AC

ARM® Cortex®- M0

64

8

10

0

1

-40 to 105

CYPAS212A1-32LQXQT USB-PD + SR + PWM controller

PAG2S-AC

ARM® Cortex®- M0

64

8

10

0

1

-40 to 105

CYPAS213A1-24SXQ

USB-PD + SR controller

PAG2S-PS

ARM® Cortex®- M0

64

8

4

0

1

-40 to 105

CYPAS213A1-24SXQT

USB-PD + SR controller

PAG2S-PS

ARM® Cortex®- M0

64

8

4

0

1

-40 to 105

CYPAS213A1-32LQXQ

USB-PD + SR controller

PAG2S-PS

ARM® Cortex®- M0

64

8

10

0

1

-40 to 105

CYPAS213A1-32LQXQT USB-PD + SR controller

PAG2S-PS

ARM® Cortex®- M0

64

8

10

0

1

-40 to 105

CYPAS211A1-32LQXQT USB-PD + SR + PWM controller

PAG2S-QZ

ARM® Cortex®- M0

64

8

10

0

1

-40 to 105

CYPAS211A1-32LQXQT USB-PD + SR + PWM controller

PAG2S-QZ

ARM® Cortex®- M0

64

8

10

0

1

-40 to 105

CYPET131

Pulse edge transformer

PAG1P

N/A

N/A

N/A

0

N/A

N/A

N/A

CYPAP111A3-10SXQPrimary PWM startup controller

PAG1P

N/A

N/A

N/A

0

N/A

N/A

-40 to 105

CYPAP111A3-10SXQTPrimary PWM startup controller

PAG1P

N/A

N/A

N/A

0

N/A

N/A

-40 to 105

CYPAP112A3-10SXQPrimary PWM startup controller

PAG1P

N/A

N/A

N/A

0

N/A

N/A

-40 to 105

CYPAP112A3-10SXQTPrimary PWM startup controller

PAG1P

N/A

N/A

N/A

0

N/A

N/A

-40 to 105

CYPAS111A1-24LQXQ

USB-PD + SR + PWM controller

PAG1S

Arm® Cortex®- M0

64

4

6

0

1

-40 to 105

CYPAS111A1-24LQXQT USB-PD + SR + PWM controller

PAG1S

Arm® Cortex®- M0

64

4

6

0

1

-40 to 105

CYPD3184A1-24LQXQ

USB-PD + SR + PWM controller

PAG1S

Arm® Cortex®- M0

64

4

6

0

1

-40 to 105

CYPD3184A1-24LQXQT USB-PD + SR + PWM controller

PAG1S

Arm® Cortex®- M0

64

4

6

0

1

-40 to 105

CYPD3135-32LQXQ

USB-PD controller

CCG3Arm® Cortex®- M0

128

8

14

4

1

-40 to 105

CYPD3135-32LQXQT

USB-PD controller

CCG3Arm® Cortex®- M0

128

8

14

4

1

-40 to 105

CYPD3135-40LQXI

USB-PD controller

CCG3Arm® Cortex®- M0

128

8

20

4

1

-40 to 105

CYPD3135-40LQXIT

USB-PD controller

CCG3Arm® Cortex®- M0

128

8

20

4

1

-40 to 105

CYPD3135-40LQXQ

USB-PD controller

CCG3Arm® Cortex®- M0

128

8

20

4

1

-40 to 105

CYPD3135-40LQXQT

USB-PD controller

CCG3Arm® Cortex®- M0

128

8

20

4

1

-40 to 105

CYPD3171-24LQXQ

USB-PD controller

CCG3PA

Arm® Cortex®- M0

64

8

12

2

1

-40 to 105

CYPD3171-24LQXQT

USB-PD controller

CCG3PA

Arm® Cortex®- M0

64

8

12

2

1

-40 to 105

CYPD3172-24LQXQ

USB-PD controller

CCG3PA-NFET Arm® Cortex®- M0

64

4

6

0

1

-40 to 105

CYPD3172-24LQXQT

USB-PD controller

CCG3PA-NFET Arm® Cortex®- M0

64

4

6

0

1

-40 to 105

CYPD3172P-24LQXQ

USB-PD controller

CCG3PA-NFET Arm® Cortex®- M0

64

4

6

0

1

-40 to 105

CYPD3172P-24LQXQT

USB-PD controller

CCG3PA-NFET Arm® Cortex®- M0

64

4

6

0

1

-40 to 105

CYPD3173-24LQXQ

USB-PD controller

CCG3PA-NFET Arm® Cortex®- M0

64

4

6

0

1

-40 to 105

CYPD3173-24LQXQT

USB-PD controller

CCG3PA-NFET Arm® Cortex®- M0

64

4

6

0

1

-40 to 105

CYPD3173P-24LQXQ

USB-PD controller

CCG3PA-NFET Arm® Cortex®- M0

64

4

6

0

1

-40 to 105

CYPD3173P-24LQXQT

USB-PD controller

CCG3PA-NFET Arm® Cortex®- M0

64

4

6

0

1

-40 to 105

CYPD3174-16SXQT

USB-PD controller

CCG3PA

Arm® Cortex®- M0

64

8

6

1

1

-40 to 105

CYPD3174-24LQXQ

USB-PD controller

CCG3PA

Arm® Cortex®- M0

64

8

12

2

1

-40 to 105

CYPD3174-24LQXQT

USB-PD controller

CCG3PA

Arm® Cortex®- M0

64

8

12

2

1

-40 to 105

CYPD3175-24LQXQ

USB-PD controller

CCG3PA

Arm® Cortex®- M0

64

8

12

2

1

-40 to 105

CYPD3175-24LQXQT

USB-PD controller

CCG3PA

Arm® Cortex®- M0

64

8

12

2

1

-40 to 105

CYPD7271-68LQXQ

USB-PD + DCDC controller

CCG7DC

Arm® Cortex®- M0

128

16

19

4

2

-40 to 105

CYPD7271-68LQXQT

USB-PD + DCDC controller

CCG7DC

Arm® Cortex®- M0

128

16

19

4

2

-40 to 105

CYPD7272-68LQXQ

USB-PD + DCDC controller

CCG7DC

ARM® Cortex®- M0

128

16

19

4

2

-40 to 125

CYPD7272-68LQXQT

USB-PD + DCDC controller

CCG7DC

ARM® Cortex®- M0

128

16

19

4

2

-40 to 125

CYPD7171-40LQXQ

USB-PD + DCDC controller

CCG7SC

ARM® Cortex®- M0

128

16

13

3

1

-40 to 125

CYPD7171-40LQXQT

USB-PD + DCDC controller

CCG7SC

ARM® Cortex®- M0

128

16

13

3

1

-40 to 125

IGBT discretes andsilicon power diodes

Operatingtemperature
range [°C]Intelligent powerswitches and modules#Type-C ports

Microcontrollers

Serial communication
blocks

USB-C controllers
and peripherals

SRAM
GPIOs
[kB]

Power
management ICs

Flash
[kB]

WBG semiconductors

CPU

Sensors

Product
familySupportCategory

Digital isolators

As the leader in USB-C end-to-end solutions, Infineon also provides a comprehensive portfolio of solutions for USB-C
adapters and chargers.

Product

Click here to learn more:
www.infineon.com/usb
www.infineon.com/ez-pd-pmg1

www.infineon.com/ez-pd-bcr
www.infineon.com/superspeed

500-950 V MOSFETs

The one-stop shop for charger and adapter designs

15-300 V MOSFETs

Applications

USB-C AC-DC and DC-DC charging solutions

www.infineon.com/usbhubs
www.infineon.com/usb2.0
342

Solutions

USB-C charging solutions

Key features

Key benefits– One/two USB-C PD controllers + DC-DC controllers– Supports latest USB-C PD 3.1 with PPS, QC4+, Samsung AFC, Apple 2.4 A, BCv1.2– ARM® Cortex®-M0 with flash for custom features implementation– Integrated Vbus NFET gate drivers, buck-boost NFET gate drivers, VCONN FETs

– Enables high power density designs– Dynamic load sharing enables intelligent redistribution of power among ports– Capable of support 2-port, 3-ports, 4-port, or more configuration– Does not require additional MCU externally for system peripheral

IGBT discretes andsilicon power diodes

and high-side current sense amplifier (HSCSA)

Digital isolators

Features and benefits– DC-DC controller: configurable switching frequency of 150 – 600 kHZ, PSM/

FCCM mode of operation, wide input voltage range of 4 – 24 V (40 V tolerant),
and programmable spread spectrum frequency for low EMI– Protection features: OVP, UVP, SCP, OCP, OTP, and Vbus-CC short– Advanced features: dynamic load sharing, power throttling, field firmware

Intelligent powerswitches and modules

upgrade, optimized-efficiency control methods for flyback converter, andbuck-bypass

Block diagram
CSA

Gate drivers

DC-DC converter

VBUS N-ch.
switch driver

VBUS
discharge

PD controller

VCONN
switches

Microcontrollers

24 V LDOSRAM 16 kB
Charging
detection

SROM 32 kB

500-950 V MOSFETs

Infineon’s EZ-PD™ CCG7SC and CCG7DC are highly integrated single- and dual-port USB Type-C power delivery (PD)solutions with built-in buck-boost controllers; they are designed for multi-port consumer charging applications andcomply with the most recent USB Type-C and PD specifications. With an on-chip 32-bit Arm® Cortex®-M0 processor,
128 kB flash, 16 kB RAM, and 32 kB ROM, EZ-PD™ CCG7xC is the most programmable USB-PD solution for DC-DC
applications, leaving the flash available for user application’s use. Custom system management features, like dynamic
load sharing and temperature monitoring, are part of the feature set thanks to the inclusion of this fully programmable
MCU with analog and digital peripherals. EZ-PD™ CCG7xC also integrates gate drivers for Vbus NFET on the provider
path and hardware-controlled protection features on the Vbus. The high degree of integration lowers the system BOM
and provides a footprint-optimized solution to support higher power density designs.

Gate-driver ICs

Single- and dual-port USB-C PD and DC-DC controller

15-300 V MOSFETs

Applications

EZ-PD™ CCG7SC and CCG7DC

Flash 128 kB

x4 TCPWM
PD controller

VCONN
switchesx2 ADC (8-bit)

CSA

Gate drivers

VBUS N-Ch
switch Driver

VBUS
discharge

Powermanagement ICs

DC-DC converter
x19 GPIOs

USB-C controllers
and peripherals

Charging
detection

ARM® Cortex®-M0

x3 SCB

Application example
Two-port USB-C charger using EZ-PD™ CCG7DC
USB - C

Switching
MOSFET

Gate drive+ DC-DCWBG semiconductors

Switching
MOSFET

PD
controller

EZ-PD™ CCG7DC

Sensors

Switching
MOSFET

PD
controller

USB - C

Gate drive+ DC-DC

Switching
MOSFET

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Applications

Solutions

USB-C charging solutions

EZ-PD™ PAG2 - USB-C PD and DC-DC controller

15-300 V MOSFETs

ZVS flyback converter chipset with integrated USB PD, synchronous rectification(SR), and PWM

Gate-driver ICs

500-950 V MOSFETs

EZ-PD™ PAG2 is a complete AC-DC charger and adapter solution with integrated USB PD. It is a 2-chip secondary-side
controlled flyback converter chipset (EZ-PD™ PAG2P and EZ-PD™ PAG2S) with integrated USB PD, synchronous rectifier(SR), and PWM controllers. EZ-PD™ PAG2 supports quasi-resonance flyback with zero voltage switching (QR-ZVS) andactive clamp flyback (ACF). Its design supports PD 3.1 SPR and 28 V EPR. EZ-PD™ PAG2S standalone can pair with PWM
controllers through an optocoupler by acting as USB PD and SR.

EZ-PD™ PAG2S

EZ-PD™ PAG2P is a primary start-up controller designed
to receive PWM signals from EZ-PD™ PAG2S, which
performs the PWM regulation. It provides HV start-up,
PET receiver via CYPET121, boosts VCC, low-side NFET
gate driver, and high-side logical driver. EZ-PD™ PAG2P
supports both X-cap discharge and non-X-cap discharge
mode. It pairs with EZ-PD™ PAG2S-AC to support ACF
converters and EZ-PD™ PAG2S-QZ to support QR-ZVS
flyback converters.

EZ-PD™ PAG2S supports secondary-side controlled
flyback converters by pairing with EZ-PD™ PAG2P. PAG2SAC is a secondary-side ACF controller enabling leakageenergy recycling and ZVS operation. PAG2S-QZ is asecondary-side QR-ZVS controller achieving ZVS using an
SR control scheme. EZ-PD™ PAG2S-PS standalone acts asa USB PD and SR-integrated secondary-side controller bypairing with third-party primary-side PWM controllers via
an optocoupler.

Key features

Key features– Integrated high-voltage start-up– Integrated low-side gate driver– Integrated high-side logical driver– Integrated VCC boost switch– Support x-cap discharge mode
– Brown-in/out and line OVP/UVP– Support OCP and SCP– Startup secondary VBUS OVP– Programmable soft-start– Integrated PET receiver– Support PD 3.1 SPR and 28 V EPR– 20-300 kHz switching frequency– Support DCM, CCM, and CrCM
– Support PSR and SSR PWM regulation– BC1.2, QC5, Apple 2.4 A, and AFC– Support VBUS fault protection– Support Vconn current limit– Supports VBUS-CC short– Short SR turn-on and off delay– Support non-logical level MOSFETs

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

EZ-PD™ PAG2P

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Solutions

USB-C charging solutions

USB-C

15-300 V MOSFETs

Applications

EZ-PD™ PAG2-QZ chipset: secondary-side controlled QR-ZVS

CoolGaN™

CC1

500-950 V MOSFETs

CC2
PAG2S-QZ
CYPAS211

PAG2P
CYPAP212

DP
DM

Gate-driver ICs

CYPET121

Digital isolators

EZ-PD™ PAG2-AC chipset: secondary-side controlled ACF

IGBT discretes andsilicon power diodes

USB-C

Driver

CC1
CoolGaN™
CC2
PAG2S-AC
CYPAS212DPDMIntelligent powerswitches and modules

PAG2P
CYPAP212

Microcontrollers

CYPET121

Comparison table: EZ-PD™ PAG1 vs EZ-PD™ PAG2

PD compliance spec

PD 3.1 SPR with PPS

PD 3.1 SPR with PPS/28 V EPR

PD 3.1 SPR with PPS/28 V EPR

VCONN switches and LDO

No

Yes

Yes
20 – 300 kHz

Switching frequency range

20 – 150 kHz

20 – 300 kHz

Zero voltage switching (ZVS)

Yes, 1st valley through SR off delay

Yes, any valley through SR turn on/off Yes, through ACF operation

Recycle leakage energy

No

No

Yes

Primary side protection– Brown in/out, line UV/OP Secon-Primary VCC supply– Supply through external LDO– Single/Dual AUX winding– VBUS OVP, UVP, OCP, SCP,
– CC1/CC2 OVP– Brown in/out, line UV/OP– Secondary start-up VBUS OVP– OCP (dual level), SCP– Integrated VCC Boost Switch– Without external LDO circuit– VBUS OVP, UVP, OCP, SCP,
– Rsense short protection– CC1/CC2/DP/DM OVP– Digital valley table– Dead time and ZVS pulse width– Brown in/out, line UV/OP– Secondary start-up VBUS OVP– OCP (Dual Level). SCP– Integrated VCC boost switch– Without external LDO circuit– VBUS OVP, UVP, OCP, SCP– Rsense short protection– CC1/CC2/DP/DM OVP– Digital valley table– Dead time and ACF pulse width

Secondary side protection

dary start-up VBUS OVP– OCP (single level)

Digital control feature– Digital valley table– Dead time

Efficiency compliant standard

Standby < 30 mW; DoE VI; CoC tier 2Standby < 30 mW; DoE VI; CoC tier 2;
EuP Lot6

Standby < 30 mW; DoE VI; CoC tier 2;
EuP Lot6

Packaging

PAG1S: 24-QFN/ PAG1P: 10-SOIC

PAG2S: 32-QFN/ PAG2P: 14-SOIC

PAG2S: 32-QFN/ PAG2P: 14-SOIC

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www.infineon.com/usbhubs
www.infineon.com/usb2.0

SupportOthersYes, 64 KB/ 8 KB
USB-C controllers
and peripherals

LP-SMPS features

Yes, 64 KB/ 8 KB

EZ-PD™ PAG2 ACF

Powermanagement ICs

USB-PD, subsystem ARM® Cortex®-M0 USB-PD MCU, Yes, 64 KB/ 4 KB
and peripheral
Memory (Flash / SRAM)

EZ-PD™ PAG2 QR-ZVS

WBG semiconductors

EZ-PD™ PAG1 Quasi-Resonant (QR)

Sensors

Feature345

From USB 1.1 to USB 5Gbps innovation, heading towards 20Gbps

Gate-driver ICs

Infineon’s EZ-USB™ peripheral controllers family offers the most comprehensive USB product portfolio in the industry.
Since 1996, EZ-USB™ has set the industry’s standard by improving the capabilities of programmable USB peripheral
controllers, enabling designers to build USB devices that can handle the most demanding performance requirements
in industrial and medical imaging applications. Machine vision, medical imaging, 3D scanners, biometric scanners, andmany other applications requiring safe and dependable high-speed plug-and-play connectivity can benefit from thehigh-performance EZ-USB™ 5 Gbps controllers.
Infineon’s EZ-USB™ peripheral controllers provide 5Gbps bandwidth today, and will soon move forward to 10 and then
20 Gbps.
Function

Programmable peripheral

MIPI CSI-2 to USB3 bridge

FIFO-USB3 bridge

Part numbers

CYUSB3011
CYUSB3012
CYUSB3013
CYUSB3014

CYUSB3064
CYUSB3065

CYUSB3015
CYUSB3016
CYUSB3017

Transfer rate

5Gbps

5Gbps

5Gbps

System interface

32-bit GPIF, 100 MHz

4x MIPI CSI-2

32-bit FIFO, 100 MHz

USB-C Mux-

Processor-

Digital isolators

EZ-USB™ SX3IGBT discretes andsilicon power diodes

EZ-USB™ CX3

-

Arm9™

Arm9™

Arm9™
512 KB / 0 KB

RAM / flash

512 KB / 0 KB

512 KB / 0 KB

USB endpoints

32

2

2

Hardware DVKSuperSpeed Explorer Kit

CX3 Camera RDK

SX3 Explorer it

EZ-USB™ FX3 SDK

EZ-USB™ FX3 SDK

-

-

-

EZ-USB™ SX3 configuration utility

Microcontrollers

SDK
Configuration utility

Intelligent powerswitches and modules

EZ-USB™ FX3Block diagram
I2C/strobe

I2C/SPI/GPIO

Tx+/TxRx+/RxD+/D-

USB-C controllers
and peripherals

EZ-USB™
FX3
SX3
CX3

USB
host

ESD
protection

Powermanagement ICs

SPI

DDR orHyperBus
Frame
buffer(DDR orHyperRAM)

PC/embedded

GPIF,
FIFO,
MIPI

FPGA,
image
signalprocessor,
VPU,
SoC

SPI
Flash

WBG semiconductors

Image
sensor,image
receiver

MIPI,
LVDS,
SLVS,
Hi-SPI

500-950 V MOSFETs

Peripheral controllers for USB 5Gbps

15-300 V MOSFETs

Applications

Solutions

USB 5Gbps peripheral controllers

Sensors

The block diagram shows a typical USB3 Vision-based machine vision camera. An image sensor using one of manydifferent interface standards is connected to an FPGA or an image signal processor (ISP), which processes andoptimizes the image and translates data into parallel data (or MIPI CSI-2) connected to an EZ-USB™ controller (FX3,SX3 or CX3). The EZ-USB™ controllers transfer uncompressed video in USB3 Vision standard to a PC or an embedded
system via a standard USB cable.

Click here to learn more:
www.infineon.com/ez-pd-bcr
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www.infineon.com/usb2.0

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Applications

Solutions

USB 5Gbps peripheral controllers

15-300 V MOSFETs

EZ-USB™ CX3 - MIPI CSI-2 toUSB 5Gbps camera controllers
Adding USB 5Gbps connectivity to image sensors with MIPI CSI-2 interface

Gate-driver ICs

500-950 V MOSFETs

Infineon’s EZ-USB™ CX3 enables USB 5Gbps connectivity to any image sensor compliant with the mobile industry
processor interface (MIPI) camera serial interface Type 2 (CSI-2) standard. It is based on the proven EZ-USB™ FX3
platform and comes with a 200 MIPS fully accessible Arm9™ CPU and 512 kB SRAM. For configuring image sensors, EZUSB™ CX3 also supports camera control interface (CCI). Pan, tilt, and zoom functions, as well as other camera control
functions, can be supported by programming the EZ-USB™ CX3’s numerous peripheral interfaces, including I2C, SPI,
and UART.

MIPI
CSI-2 Rx
Interface

SRAM(512kB/256kB)

Distributed
DMA Controller

32
End
Point

Clock
Clock
6-40 MHz 19.2 MHz

EZ-USB™ CX3

USB
5Gbps
Peripheral
USB2.0HS
Peripheral

USB
5Gbps
Port

MIPI CSI-2

Image
sensor,image
processor

I2C

SPI

UART

GPIO

I2C

I2C

Autofocus, pan, tilt zoom,
shutter control, lighting, etc

I2C

SPI

Audio
output

Audio
input

USB host( PC )

EZ-USB™ CX3 Example Application

Microcontrollers

EZ-USB™ CX3 Logic Block Diagram

USB 5 Gbps

EZ-USB™
CX3

I2C
I2C

Power
subsystem

IGBT discretes andsilicon power diodes

Arm9™ CPU

Boot
ROM

Intelligent powerswitches and modules

JTAG

Power
Modes

Digital isolators

Block diagram

Key features

Key benefits– Capable of streaming uncompressed video, including:– 4K UHD video at 15 fps– 1080p video at 30 fps– 720p video at 60 fps– Connectivity: MIPI CSI-2 to USB 5 Gbps bridge controller with an integrated– Adds USB 5Gbps connectivity to any MIPI CSI-2 based camera– Turnkey solutions on industrial standards– Quick time-to-market with low development costs

USB-C controllers
and peripherals

Features and benefits

USB 5 Gbps PHY

Powermanagement ICs– Bandwidth: 4x CSI-2 lanes, 1 Gbps per lane
– Color format support: RAW8/10/12/141, YUV422/4442, RGB888/666/5653– Camera protocol: UVC or proprietary– Programmability: fully accessible Arm9™ CPU with 200 MHz

Sensors

WBG semiconductors

operation and 512 kB SRAM

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ClockClock6-40 MHz 19.2 MHz

SB™ CX3

MIPI CSI-2

Image
sensor,image
processor

USB 5 Gbps

EZ-USB™
CX3

2

IC

I2C

I2C

Autofocus, pan, tilt zoom,
shutter control, lighting, etc

I2C

SPI

Audio
output

Audio
input

USB host( PC )In the block diagram a typical EZ-USB™ CX3-based
camera is depicted. The EZ-USB™ CX3 is connected toan image sensor with a MIPI CSI-2 (up to four lanes)interface. A standard USB cable is then used by the
peripheral controller to transfer uncompressed videoin compliance with the USB video class standard to a
PC or an embedded system.

Gate-driver ICs

EZ-USB™ CX3 Example Application

Operatingvoltage min [V]Operatingvoltage max [V]

2/4-Lanes MIPI CSI-2, GPIO, I2C, SPI, I2S, UART

0 to 70

1.15

1.25

5

2/4-Lanes MIPI CSI-2, GPIO, I2C, SPI, I2S, UART

-40 to 85

1.15

1.25

CYUSB3065-BZXC USB 3.0

5

2/4-Lanes MIPI CSI-2, GPIO, I2C, SPI, I2S, UART

0 to 70

1.15

1.25

CYUSB3065-BZXI

5

2/4-Lanes MIPI CSI-2, GPIO, I2C, SPI, I2S, UART

-40 to 85

1.15

1.25

USB standard

USB speed [GBit/s]

I/O type

CYUSB3064-BZXC USB 3.0

5

CYUSB3064-BZXI

USB 3.0

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

USB 3.0

IGBT discretes andsilicon power diodes

Operating temperature range [°C]

Product

Digital isolators

Product portfolio

Click here to learn more:
www.infineon.com/usb
www.infineon.com/ez-pd-pmg1

www.infineon.com/ez-pd-bcr
www.infineon.com/superspeed

www.infineon.com/usbhubs
www.infineon.com/usb2.0

Support

USB
5Gbps
Port

Power
subsystem

500-950 V MOSFETs

Application diagram

15-300 V MOSFETs

Applications

Solutions

USB 5Gbps peripheral controllers

348

Infineon’s EZ-USB™ FX3 is the industry’s most adaptable USB peripheral controller which can add USB 5Gbps
connectivity to any system. A processor, an image sensor, an FPGA, or an ASIC can all be connected using the EZ-USB™
FX3’s second-generation general programmable interface (GPIF II). Users can configure the general programmableinterface (GPIF) to operate like a FIFO, an asynchronous SRAM, an address/data multiplexed interface, a CompactFlash,or a custom interface.
EZ-USB™ FX3 will enable applications like machine vision and medical imaging to achieve higher quality at a lower costbecause USB 5Gbps and USB-C are now standard connectivity in all PCs.

JTAG

Power
Modes

Boot
ROM

Arm9™ CPU

SRAM
(512kB/256kB)

Digital isolators

Block diagram
EZ-USB™ FX3

32
End
point

USB 5Gbps
peripheral
USB 2.0HS
peripheral

USB
port

Intelligent powerswitches and modules

Distributed
DMA Controller

IGBT discretes andsilicon power diodes

USB 2.0
HS/FS/LSOTG Host

GPIF II
32/16-bits

Chargerdetect

SPI

UART

I2C

GPIO

Microcontrollers

I2C

Features and benefits
SRAM– Hi-speed on-the-go (HS-OTG) host and peripheral compliant with on-the-go
Supplement Version 2.0

Key benefits

USB-C controllers
and peripherals– Full accessible 32-bits, 200 MHz, Arm9™ core with up to 512 kB of embedded– Adds USB 5Gbps capability to any system– Quick time-to-market with low development costs– Turnkey solutions on industrial standards– Easy code development and integration– Easy connectivity to peripherals such as I2C, I2S, UART, SPI and GPIOs

Sensors

WBG semiconductors

Powermanagement ICs

Key features– USB 2.0 OTG compliance– Compliant with USB BC v1.1
– Additional connectivity to peripherals– Improved battery charging capabilities

500-950 V MOSFETs

USB 5Gbps to 32-bit data bus with Arm9™

Gate-driver ICs

EZ-USB™ FX3 - USB 5Gbps peripheral controllers

15-300 V MOSFETs

Applications

Solutions

USB 5Gbps peripheral controllers

Click here to learn more:
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Applications

Solutions

USB 5Gbps peripheral controllers

Application diagram
EZ-USB™ FX3 HD video / 3D imaging

To PC overUSB 5Gbps

EZ-USB™ FX3

USB
standard

USB speed [GBit/s]

I/O type15-300 V MOSFETs
Gate-driver ICs

GPIF

Product portfolio
Operatingvoltage max [V]USB 3.0

5

8/16-bit GPIF, DMA, GPIO, I2C, UART, I2S, SPI

0 to 70

1.7

3.6

CYUSB3012-BZXC

USB 3.0

58/16/32-bit GPIF, DMA, GPIO, I2C, UART, I2S, SPI

0 to 70

1.7

3.6

CYUSB3013-BZXC

USB 3.0

5

8/16-bit GPIF, DMA, GPIO, I2C, UART, I2S, SPI

0 to 70

1.7

3.6

CYUSB3014-BZXC

USB 3.0

58/16/32-bit GPIF, DMA, GPIO, I2C, UART, I2S, SPI

0 to 70

1.7

3.6

CYUSB3014-BZXCTUSB 3.0

58/16/32-bit GPIF, DMA, GPIO, I2C, UART, I2S, SPI

0 to 70

1.7

3.6

CYUSB3014-BZXI

USB 3.0

58/16/32-bit GPIF, DMA, GPIO, I2C, UART, I2S, SPI-40 to 85

1.7

3.6

CYUSB3014-BZXIT

USB 3.0

58/16/32-bit GPIF, DMA, GPIO, I2C, UART, I2S, SPI-40 to 85

1.7

3.6

Boards
EZ-USB™ FX3 DEMO_FX3_U3V_CAM01

EZ-USB™ FX3 CY-RB4111

EZ-USB™ FX3 CYUSB3KIT-003

The EZ-USB™ FX3 DEMO_FX3_LVDS_CAM01
consists of a MIPI CSI-2 camera moduleconnected to an FPGA on one PCB
mounting on an updated EZ-USB™ FX3
Explorer kit.

Sensors

WBG semiconductors

The EZ-USB™ FX3 DEMO_FX3_U3V_CAM01 The EZ-USB™ FX3 CYRB4111 USB3 vision
The EZ-USB™ FX3 CYUSB3KIT-003 is an
Camera Kit is based on the EZ-USB™
solution demo kit is based on the EZ-USB™ easy-to-use and inexpensive development
FX3. The kit includes a MIPI CSI-2 camera
FX3. This kit enables users to stream 4K 30 platform enabling developers to add USB
module connected to an FPGA on one PCB fps videos from an external HDMI source
3.0 device functionality to any system.
mounting on an updated EZ-USB™ FX3
to PC via USB-C interface in USB3 Vision
Explorer kit.
standard.

EZ-USB™ FX3 DEMO_FX3_LVDS_CAM01

Microcontrollers

Intelligent powerswitches and modules

CYUSB3011-BZXC

Digital isolators

Operatingvoltage min [V]

IGBT discretes andsilicon power diodes

Operating temperature range [°C]

USB-C controllers
and peripherals

ProductPowermanagement ICs

FPGA/SoC

500-950 V MOSFETs

Image Sensor

USB 3.0 provides 5Gbps bandwidth and supports
the streaming of HD video without the need forcompression. EZ-USB™ FX3 connects directly witha variety of image sensors, enabling USB 5 Gbps
camera and 3D imaging designs while saving bill-ofmaterial cost and PCB footprint.

Click here to learn more:
www.infineon.com/ez-pd-bcr
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Applications
15-300 V MOSFETs

USB 5Gbps easily configured for UVC/UAC or USB3 Vision applications

Gate-driver ICs

500-950 V MOSFETs

Infineon’s EZ-USB™ SX3 can be configured by tuning a wide range of parameters such as VID/PID, product strings,
serial numbers, FIFO settings, GPIOs, USB endpoints and auxiliary interface via its easy-to-use Graphic User Interface(GUI) utility. The utility can also produce USB video class (UVC) and USB audio class (UAC) configurations that are
specification compliant without the need for firmware development, significantly shortening the time-to-market forend products. In addition to the configurable parameters, developers can also utilize the integrated 32-bit Arm9™
processor to further customize their devices, differentiating in the market and gaining a competitive advantage.

Digital isolators

Additionally, Infineon provides a wide range of USB Type-C port controllers that can be used with the EZ-USB™ SX3
to enhance cameras, video capturing, and other data acquisition applications with USB-C and USB power delivery
features.
Block diagram
I2C

Boot
ROM

Arm9™ CPU

SRAM
(512-KB)

Image sensor
with parallelinterface

EZ-USB™ SX3

EZ-USB™
SX3

8-bit 1000 MHz

USB 5Gbps

USB host( PC )USB 5Gbps

USB host( PC )USB 5Gbps

USB host( PC )IGBT discretes andsilicon power diodes

Power
Modes

SPI flashDirect image sensor interface to EZ-USB™ SX3GeneralConfigurable
InterfaceDistributed
DMA Controller

Image sensor
4K, 30fps
1080p, 60fps

USB 5Gbps

FPGA /ISPLDVS/MIPI CSI-2/
parallel

32-bit1000 MHzEZ-USB™
SX3Intelligent powerswitches and modules

I 2C

SPI flashUSB 5Gbps Camera

I2C

SPI

HDMI source
1080p, 60fps
4K, 30fps

GPIO

HDMI

HDMI
RX

24-bitFPGA

32-bit1000 MHzEZ-USB™
SX3

Microcontrollers

I2C

SPI flash
4K HDMI USB 5Gbps capture cared

Image sensor
with parallelinterface

I2C

EZ-USB™
SX3

8-bit 1000 MHz

USB 5Gbps

USB host( PC )USB 5Gbps

USB host( PC )USB 5Gbps

USB host( PC )

USB-C controllers
and peripherals

Application diagram

SPI flashPowermanagement ICs

Direct image sensor interface to EZ-USB™ SX3
I 2CImage sensor
4K, 30fps
1080p, 60fps

FPGA /ISPLDVS/MIPI CSI-2/
parallel

32-bit1000 MHzEZ-USB™
SX3

WBG semiconductors

SPI flashUSB 5Gbps Camera

I2C

HDMI source
1080p, 60fps
4K, 30fps

HDMI

HDMI
RX

24-bitFPGA

32-bit1000 MHzEZ-USB™
SX3
SPI flash

4K HDMI USB 5Gbps capture cared

Sensors

USB 5Gbps

EZ-USB™ SX3 - FIFO to USB 5Gbps controllers

Click here to learn more:
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www.infineon.com/usbhubs
www.infineon.com/usb2.0

SupportSB™ SX3

Solutions

USB 5Gbps peripheral controllers

351

Solutions

USB 5Gbps peripheral controllers

Key benefits– Universal Serial Bus (USB) integration– USB 3.2, Gen 1 and USB 2.0 peripherals compliant with USB 3.2 specification– Lowest total cost (bandwidth per dollar) solution for any high-speed system– Turnkey solutions on industrial standards– Quick time-to-market with low development costs– Industry gold standard with highly integrated features– Easy customization via configuration utility

revision 1.0– 5 Gbps PHY compliant with USB 3.2 Gen 1– Three physical endpoints– Supports UVC, UAC, and USB vendor class protocol– 32 bit CPU ARM926EJ core with 200 MHz operation with 512 kB embedded

15-300 V MOSFETs

Key features

Applications

Features and benefits

SRAM– General configurable interface (supports up to 100 MHz; 8-, 16-, 24-, and 32 bit

500-950 V MOSFETs

data bus; slave FIFO, parallel camera interface)– Additional connectivity to SPI boot flash and I2C slaves at 100/400 kHz and 1 MHz– Firmware ready for USB video class (UVC), USB3 Vision, and many standard
USB class applications

Gate-driver ICs– Less than 60 µA with VBATT on and 20 µA with VBATT off

USB speed [GBit/s]

I/O type

Operating temperature range [°C]

Operatingvoltage min [V]Operatingvoltage max [V]USB 3.0

58/16/24/32-bit GPIF, DMA, GPIO, I2C, SPI

0 to 70

1.7

3.6

CYUSB3015-BZXCTUSB 3.0

58/16/24/32-bit GPIF, DMA, GPIO, I2C, SPI

0 to 70

1.7

3.6

CYUSB3015-BZXI

USB 3.0

58/16/24/32-bit GPIF, DMA, GPIO, I2C, SPI-40 to 85

1.7

3.6

CYUSB3015-BZXIT

USB 3.0

58/16/24/32-bit GPIF, DMA, GPIO, I2C, SPI-40 to 85

1.7

3.6

CYUSB3016-BZXC

USB 3.0

58/16/24/32-bit GPIF, DMA, GPIO, I2C, SPI

0 to 70

1.7

3.6

CYUSB3016-BZXCTUSB 3.0

58/16/24/32-bit GPIF, DMA, GPIO, I2C, SPI

0 to 70

1.7

3.6

CYUSB3016-BZXI

USB 3.0

58/16/24/32-bit GPIF, DMA, GPIO, I2C, SPI-40 to 85

1.7

3.6

CYUSB3016-BZXIT

USB 3.0

58/16/24/32-bit GPIF, DMA, GPIO, I2C, SPI-40 to 85

1.7

3.6

CYUSB3017-BZXC

USB 3.0

58/16/24/32-bit GPIF, DMA, GPIO, I2C, SPI

0 to 70

1.7

3.6

CYUSB3017-BZXCTUSB 3.0

58/16/24/32-bit GPIF, DMA, GPIO, I2C, SPI

0 to 70

1.7

3.6

CYUSB3017-BZXI

USB 3.0

58/16/24/32-bit GPIF, DMA, GPIO, I C, SPI-40 to 85

1.7

3.6

CYUSB3017-BZXIT

USB 3.0

58/16/24/32-bit GPIF, DMA, GPIO, I2C, SPI-40 to 85

1.7

3.6

2

Microcontrollers

CYUSB3015-BZXC

IGBT discretes andsilicon power diodes

USB
standard

Intelligent powerswitches and modules

Product

Digital isolators

Product portfolio

BoardsPowermanagement ICs

USB-C controllers
and peripherals

CY-SD4210 EZ-USB™ SX3 HDMI 4K to USB 5 Gbps demo kit

Sensors

WBG semiconductors

EZ-USB™ SX3 HDMI 4K to USB 5Gbps demonstartion kit is based on Infineon’s EZ-USB™ SX3. An FPGA captures avideo stream from the HDMI interface and transfers it via USB 5Gbps connection to a PC. The kit can be configured
as a USB video class (UVC) device or a USB3 Vision device easily via EZ-USB™ SX3 Configuration Utility and supports
up to 4K 30 frame-per-second video stream.

Click here to learn more:
www.infineon.com/ez-pd-bcr
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Solutions for low-speed, full-speed and high-speed devices

EZ-USB™ encore is a family of full-speed USB controllers based on Infineon’s flexible PSoC™ architecture. These USB
controllers have configurable analog and digital blocks, allowing you to customize the part based on your target
application. Moreover, EZ-USB™ encore also integrates components such as RAM, clock generator and USB termination
resistors reducing the overall system cost and area.

Device controller

Device controller

Device controller

USB2.0 Full speed (12 Mbps)

USB2.0 High speed (430 Mbps)

USB2.0 High speed (430 Mbps)

I2C, SPI, UART, PS/2, ADC

Parallel 8/16-bit GPIF* [48 MHz)I2C, USART

Parallel 16/32-bit GPIF* (100 MHz)I2C, UART, SIN
Arm9™

MCU subsystem

M8C

8051

RAM

1 kB

16 kB

512 kB

Hardware DVKNA

CY3539CYUSB3KIT-003

Software SDK
Package

SuiteUSB

EZ-USB™ FX3 SDK

56-SSOP/VFBGA/QFN, 100-TQFP/128TQFP

121-BGA

0°C to 70°C -40°C to + 85°C

0°C to 70°C -40°C to + 105°C

0°C to 70°C -40°C to + 85°C

Sensors

WBG semiconductors

Powermanagement ICs

Temperature

SuiteUSB
28-SOP/32-QFN/56-QFN/16-COLQFNIntelligent powerswitches and modules

Interfaces

EZ-USB™ FX2G2

Microcontrollers

Function
USB Spec (Speed)

EZ-USB™ FX2LP

USB-C controllers
and peripherals

EZ-USB™ encore

IGBT discretes andsilicon power diodes

EZ-USB™ FX2LP/FX2G2 are highly integrated USB microcontrollers that serve as the basis for any USB high-speed
peripheral device. To take full advantage of the USB 2.0 480-Mbps signaling rate, EZ-UBS™ FX2LP and EZ-USB™ FX2G2
contain specialized hardware to buffer USB data and to connect seamlessly to a variety of high-bandwidth external
devices such as MCUs, ASICs, and FPGAs.

Digital isolators

Gate-driver ICs

Since 1996, EZ-USB™ has been setting the standard for the industry by enhancing the capabilities of programmable
USB peripheral controllers, this has enabled developers to design USB devices that can meet the most stringent
performance requirements in industrial and imaging applications. More significantly, Infineon’s first-rate customer
service and long-term supply guarantee your successful product life cycles last for more than ten years. The complete
portfolio of USB programmable peripheral controllers supports low-speed and full-speed options with EZ-USB™ encore
and high-speed options with EZ-USB™ FX2LP and EZ-USB™ FX2G2.

500-950 V MOSFETs

USB 2.0 peripheral controllers

15-300 V MOSFETs

Applications

Solutions

USB 2.0 peripheral controllers

Click here to learn more:* general programmable interface

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Applications

Solutions

USB 2.0 peripheral controllers

Block diagram

PLL

Data (8)Channel 0
UART
I2C/SPI

I2C
MASTER

8051 CORE
12/24/48 MHz

VBUS
regulator

Serialinterfaceengine

16KB
RAM

Battery
chargerdetection

GPIF

RDY(6)
CTL(6)ECC

54 KB FIFO

Gate-driver ICs

USB transceiverwith int. resistor

ADDR(9)Up to 96 MBytes/s
burst rate

Digital isolators

USB

Additional I/O
including two USARTs

Additional I/O (24)USB subsystem

500-950 V MOSFETs

Address (16)

EZ-USB™
FX2LP device
controller

15-300 V MOSFETs

24 MHzExt. XTALHigh-performance microusing standard tools withlower-power options

Key features

Key benefits– USB 2.0 USB IF high speed certified (TID # 40460272)– GPIF supports 8-bit/16-bit external data interface– Ultralow power: ICC no more than 85 mA in any mode
– Ideal for bus- and battery-powered applications– Configurability for VID/PID using EPROM– Single-chip integrated USB 2.0 transceiver, smart SIE, and enhanced 8051

– Wide portfolio of peripheral controllers supporting low-speed, full-speed, and

IGBT discretes andsilicon power diodes

Features and benefits
high-speed options

Intelligent powerswitches and modules– Quick time-to-market with hardware and software development kit– Market-proven solutions since 1996
– Premium customer support and long-term supply commitment

microprocessor

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers– Integrated FIFOs, integrated I2C controller– Commercial and industrial temperature grade

Click here to learn more:
www.infineon.com/ez-pd-bcr
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Applications

Solutions

USB 2.0 peripheral controllers

EZ-USB™ serial bridge controller

15-300 V MOSFETs

Discover a wide portfolio of full-speed bridge controllers with configurable
and fixed functions

CY7C65213/A

CY7C65223/D

CY7C6522324LQXS/T

CY7C65216/D

CY7C652148/
214D

CY7C65211/A

CY7C65215/A

CY7C65211A24LQXS/T

CY7C65210/A

CY7C65217/
217A1

CY7C65210A24LQXS/T

Application

Industrial,consumerIndustrial,consumer

Automotive

Industrial,consumerIndustrial,consumerIndustrial,consumerIndustrial,consumer

Automotive

Industrial,consumerIndustrial,consumer

Automotive

Number ofchannels

SingleSingle/dual

SingleSingle/dual

Single/dual

SingleDual

SingleSingleDual

Single

8

4/7

4

8/12

6/8

10

17

10

9/11

7/9

11

Interfacesupported

UART

UART

UART

I2C

SPI

SPI I2C UARTSPI I2C UARTSPI I2C UART

I2C

I2C

I2C

SPI width

–

–

–

–

4–16 bits

4–16 bit

4–16 bit

4–16 bit–––

Main/replica

–

–

–

main/replica

main

main/replica

main/replica

main/replica

main

main

main

UART speed,
pins

3 Mbps, 8

3 Mbps, 4

3 Mbps, 2/4/6––

3 Mbps, 2/4/6

3 Mbps, 2/4/6

3 Mbps, 2/4/6–

3 Mbps, 2Battery charger
detection (BCD)

✓

✓

✓

✓

✓

✓

✓

✓

–

–

✓

CAPSENSE™
buttons

–

–

–

–

–

8

5

5

–

–

–

Flow control

HW

HW, SW

HW, SW

–

–

HW

HW

HW

–

–

–

32-QFN/28-SSOP

24-QFN/32QFN

24-QFN

24-QFN/32QFN

24-QFN/32QFN

24-QFN

32-QFN

24-QFN

24-QFN

24-QFN

24-QFN

Power
management ICs
WBG semiconductors
Sensors

Click here to learn more:
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www.infineon.com/usb2.0

SupportPackages

USB-C controllers
and peripherals

GPIOs

Gate-driver ICs

USB-billboard controller
Digital isolators

USB-Serial configurable bridge controller

IGBT discretes andsilicon power diodes

USB-SPI
bridgecontroller

Intelligent powerswitches and modules

USB-I2C
bridgecontroller

Microcontrollers

USB-UART bridge controller

500-950 V MOSFETs

EZ-USB™ serial bridge controller is a family of full-speed bridge controllers offering both configurable and fixedfunction options that provides connectivity between USB and serial interfaces UART, SPI, I2C. With the lowest power
consumption in standby mode (5 μA), these bridge controllers are the first in the market to offer programmableserial channels for UART/I2C/SPI interfaces. With the latest addition of fixed-function controllers, they can be easily
configured to work as USB to UART, USB to I2C, or USB to SPI bridges without requiring any firmware development by
the user. The EZ-USB™ Serial Bridge Controller family integrates the industry-leading CAPSENSE™ capacitive-touchsensing technology (for touch-sensitive key switches) and battery charger detection compliant with USB-IF battery
charging specification ver. 1.2 to detect the source of power on the USB port.

355

Applications

Solutions

USB 2.0 peripheral controllers

Block diagram
EZ-USB™ Serial Bridge Controller
ResetInternal
48-MHz OSCInternal
32-KHz OSC

SCB0
256-Byte
Tx Buffer
256-Byte
Rx Buffer

256-Byte
Tx Buffer

USB

SerialInterfaceEngineChannel 0
UART
I2C/SPIUARTI2C or SPI

SCB1

USB Subsystem
VBUS
Regulator

USB Transceiverwith Int. Resistor

15-300 V MOSFETs

Voltage
Regulator

VCCD

512-Byte
Flash
Memory256-Byte
Rx Buffer

500-950 V MOSFETs

VDDD

Channel 1
UART
I2C/SPIUARTI2C or SPI

CapSense

CapSense
17

GPIO
5
JTAG

Digital isolators

JTAG Controller

Gate-driver ICs

GPIO by viewer][Not supported

Battery
Charger
Detection

Key benefits– Dual-channel UART, I2C, or SPI to USB bridge– Supports up to 8 CAPSENSE™ buttons– Configurable and fixed function options– BCD compliant to USB-IF battery charging revision 1.2– Integrated regulator, oscillator and termination resistors– Driver support for major operating systems– Configuration utility for VID/PID and serial interfaces– Support multiple USB device classes: CDC, PHDC, HID and vendor specific– Easy to design, without firmware nor software development– Industry’s lowest power consumption in standby mode
– Ideal for low-power devices– Compatibility– Minimization of switching costs

Intelligent powerswitches and modules

Key features

IGBT discretes andsilicon power diodes

Features and benefits

Microcontrollers

device classes

Boards
EZ-USB™ serial bridge controller CYUSBS236

EZ-USB™ serial bridge controller CYUSBS232

CYUSBS236 development kit (DVK) helps evaluate the
CYUSBS232 reference design kit (RDK) is a low-cost kit tofeatures of the dual-channel EZ-USB™ serial bridge cont- evaluate EZ-USB™ serial bridge controller CY7C65213. The
roller CY7C65215. The kit provides two copper pads on the kit, along with its hardware documentation, serves as a
PCB to test CAPSENSE™ feature, two pairs of EEPROMs to reference design for applications like USB-to-UART cables.
test I2C and SPI interfaces, two RS232 line drivers to test
UART interfaces.

Kit based on CY7C65211-24LTXI

Kit based on CY7C65215-32LTXIWBG semiconductors

CYUSBS234 development kit (DVK) helps
evaluate the features of the single-channel
EZ-USB™ Serial Bridge Controller CY7C65211.
The kit provides a copper pad on PCB to test
CAPSENSE™ feature, a set of EEPROMs to test
I2C and SPI interfaces, a RS232 line driver to test
UART interfaces.

Powermanagement ICs

USB-C controllers
and peripherals

EZ-USB™ serial bridge controller CYUSBS234

Sensors

Kit based on CY7C65213-32LTXIClick here to learn more:
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Robust interoperability, extensive charging support, and full configurability
Infineon offers a wide portfolio of hub controllers supporting USB 2.0, USB 3.x 5 Gbps, 10 Gbps and USB Type-C ports
with robust backwards interoperability with legacy USB speeds. The USB 3.x hub controllers provide advanced USB-PDand battery charging capabilities, featuring up to eight downstream ports for full configurability and flexible design.

USB standard

EZ-USB™ HX2LP

EZ-USB™ HX2VL

EZ-USB™ HX3

EZ-USB™ HX3
automotive

EZ-USB™ HX3PD

USB 2.0 480 Mbps

USB 2.0 480 Mbps

USB 3.x 5 Gbps

USB 3.x 5 Gbps

USB 3.x 10 Gbps

CY7C6562x
CY7C6563x

CY7C6563x
CY7C65642

CYUSB330X
CYUSB331X
CYUSB332X
CYUSB230X

CYUSB332x
CYUSB330x

CYUSB4347
CYUSB4357

2/4

2/4

2/4

2/4

7 (5x SS, 2x USB 2.0)

Part numbers
Nr. of downstream ports

Digital isolators

USB hub family

Gate-driver ICs

The wide portfolio offers different combinations of features to address all possible needs for notebook PCs, docking
stations, TV, STB, DVR, gaming, home gateways, Wi-Fi routers, and automotive and industrial applications:

2 PD ports

USB power delivery✓

ACA-dock✓

CYUSB3324✓

USB billboard✓

Dock management controller (DMC)✓

Multi-TT (one TT per port)
SPI

✓

✓

✓

✓

SPI/I2C

I2C

I2C

2x I2C/SPI

Arm® Cortex®-M0Arm® Cortex®-M0Arm® Cortex®-M0

MCUIntelligent powerswitches and modules

Battery charging v1.2✓

Serial interface

IGBT discretes andsilicon power diodes✓

USB Type-C

✓

✓

✓

✓

✓

✓

✓

✓

Configurable USB PHYs

✓

✓

✓

Shared link

✓

✓

✓

✓

✓

Vendor command
Individual

CYUSB3326

GangedCYUSB330x

CYUSB3304

Both

CYUSB3324

CYUSB3324

CYUSB332x

CYUSB3324

Pin-strap
Port indicator
56QFN

Packages✓

CYUSB3324

CYUSB3324

88QFN, 68QFN

100BGA

192BGA✓

Automotive✓✓

Sensors

WBG semiconductors

Temperature (-40°C - 85°C)

48TQFP, 28QFN

USB-C controllers
and peripherals

✓

Power
management ICs

Multi-TT (one TT per port)
In system programming (ISP)

Microcontrollers

2x 128KB

Flash

External
power switch
control

500-950 V MOSFETs

USB hubs and USB Type-C port controllers

15-300 V MOSFETs

Applications

Solutions

USB hubs and USB Type-C
port controllers

Click here to learn more:
www.infineon.com/ez-pd-bcr
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www.infineon.com/usb2.0

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Solutions

USB hubs and USB Type-C
port controllers

Applications

FeaturesUSB 3.xtransceiver

Enable charging and simultaneous
data transfer for mobile devices

Accessory charger
dock

Manage USB dock system to support USB
billboard and firmware download over USB

Dock management
billboard controller

USB 3.x hub
controller

Market-proven USB PD stack with
Arm®Cortex®-M0 32-bit MCU

USB PD controller

USB 2.0
HS/FS/LS transceiver

Enable USB 3.x port to be split into an embedded
SuperSpeed port and a standard USB 2.0 port

Shared USB 3.x linkIn-system EEPROM programming through USB

in-system
programmingUSB 2.0 hub
controller

USB 2.0 link power management,
integrated pull-up/pull-down resistor,
dedicated transaction translator

Boot loader for hub initialization

SPI, I2C, GPIO
interface

Type-C
CC/PD control

Integrated CC logic,
plug orientation correction

Hardware assisted authentication of firmware
image including AES, SHA, CRC, PRNG

Crypto block

Battery charging
control

BC1.2 and other mobile charging

500-950 V MOSFETs

EZ-USB™ HX3 SS (5 Gbps) and
EZ-USB™ HX3PD (10 Gbps) comply
with USB-IF 3.x specification

Arm® Cortex®-M0 Controller

Gate-driver ICs

External powerovercurrent
LED indicator

Digital isolators

USB 2.0 link power management,
integrated pull-up/pull-down resistor,
dedicated transaction translator

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Individual/ganged external power switch control
with OVP/OCP and port indicator

15-300 V MOSFETs

EZ-USB™ hub controller

Click here to learn more:
www.infineon.com/ez-pd-bcr
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www.infineon.com/usb2.0

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Applications

Solutions

USB hubs and USB Type-C
port controllers

EZ-USB™ HX3

15-300 V MOSFETs

USB 3.x 5Gbps 4-port hub controller with SS/USB 2.0 PHY shared link,
DS ports charging and automotive grade

CYUSB3314

CYUSB3324

CYUSB3326

CYUSB3328

CYUSB2302

CYUSB2304

2 (USB 3.0)

4 (USB 3.0)

4 (USB 3.0)

6 (4 SS , 2 USB 8 (4 SS , 4 USB
3.0, 2 USB 2.0)
2.0)

2 (USB 2.0)

4 (USB 2.0)

Number of sharedlinks ports

0

0

0

0

0

2

4

0

0

BC v1.2

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

ACA-dock

No

No

No

No

Yes

No

Yes

No

No

External powerswitch control

GangedGangedIndividual

Individual

GangedGangedPin-strap support

No

No

Yes

Yes

No

No

Number of DS ports

Individual and Individual and Individual andgangedgangedganged
Yes

Yes

Yes

I2C

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Vendor command

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

No

No

Yes

Yes

Yes

No

n

No

No

Packages"68-QFN,
100-ball BGA"

"68-QFN,
100-ball BGA"

"88-QFN,
100-ball BGA"

"88-QFN,
100-ball BGA"

"88-QFN,
100-ball BGA"

"88-QFN,
100-ball BGA"

"88-QFN,
100-ball BGA"

"68-QFN,
100-ball BGA"

"68-QFN,
100-ball BGA"

Temperature range

Industrial,commercial
andautomotive

Industrial,commercial
andautomotive

Industrial andcommercial

Industrial,commercial
andautomotive

Industrial,commercial
andautomotive

Industrial andcommercial

Industrial (88QFN only) andcommercial

Industrial,commercial
andautomotive

Industrial,commercial
andautomotive

Sensors

WBG semiconductors

Powermanagement ICs

Port indicators

Digital isolators

CYUSB3312

4 (USB 3.0)

Intelligent powerswitches and modules

CYUSB3304

2 (USB 3.0)

Microcontrollers

CYUSB3302

USB-C controllers
and peripherals

Features/Part

IGBT discretes andsilicon power diodes

The configurable USB 5 Gbps and USB 2.0 PHY of the EZ-USB™ HX3 enhance signal quality, giving board designers more
flexibility and simplifying USB-IF compliance. EZ-USB™ HX3 also supports shared USB link, a proprietary feature that
doubles the number of USB ports, creating 8 ports from a 4-port hub controller.

Gate-driver ICs

500-950 V MOSFETs

EZ-USB™ HX3 is Infineon’s USB-IF-certified 4-port hub controller. It has been repeatedly tested at every USB plugfest and in independent labs, demonstrating compatibility with all recognized host controllers, device classes, andoperating systems. It supports most USB charging standards, including battery charging specification v1.2, Apple
charging standard, YD/T 1591-2006 and ACA-dock. This last feature of the EZ-USB™ HX3 enables simultaneous useof USB devices connected to the downstream ports and charging of a smartphone or tablet that supports USB OTG.
Without a host attached to the upstream port, it also supports battery charging on the downstream ports.

Click here to learn more:
www.infineon.com/ez-pd-bcr
www.infineon.com/superspeed

www.infineon.com/usbhubs
www.infineon.com/usb2.0

Supportwww.infineon.com/usb
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Applications

Solutions

USB hubs and USB Type-C
port controllers

Block diagram
USB-B port

3.3 V

15-300 V MOSFETs

Upstream port
USB 5 Gbps | USB 2.0

3.3 -> 1.2
regulator
USB hub
MCU
USB 2.0
hub

I2C I/FI2C EEPROM

PLL

26-MHz crystal

Flash | RAM

500-950 V MOSFETs

5 Gbps superspeedhub

USB-A port

Port2
USB 5Gbps | USB 2.0

Port3
USB 5Gbps | USB 2.0

Port4
USB 5Gbps | USB 2.0

USB-A port

USB-A port

USB-A port

Digital isolators

Port1
USB 5Gbps | USB 2.0

Gate-driver ICs

Gang powerswitchFeatures and benefits
Key features

Key benefits– Compliance with USB 3.2 Gen 1 (USB-IF and WHQL certified)– Shared link feature (supports simultaneous USB 2.0 and SuperSpeed USB– Supports up to 4 USB 3.0 compliant DS ports– Enables extra downstream (DS) ports for on-board connections in embedded– Enables USB charging while the hub is disconnected from a hub host– Supports BC v1.2 and Apple charging– Allows firmware upgrades using I2C EEPROM or an external I2C master– Integrated ARM® Cortex®-M0 CPU– LED status indicators – suspend, SS, and USB 2.0 operation– Enables charging of devices connected to the DS ports when no host is connec-

applications

Intelligent powerswitches and modules

ted on the upstream (US) port

– Easy-to-customize configuration parameters– High quality and reliability

Microcontrollers

devices on the same port)

Boards
EZ-USB™ HX3 CY4609

EZ-USB™ CY4603

Power
management ICs

USB-C controllers
and peripherals

EZ-USB™ HX3 CY4613

IGBT discretes andsilicon power diodes

EZ-USB™ HX3

Sensors

WBG semiconductors

It’s a development kit aimed to demonstrate It’s a reference design kit that can be used as a referen- It’s a development kit that demonstrates EZ-USB™
EZ-USB™ HX3´s shared link feature in a 6-port ce design for standalone USB 3.0 hub applications.
HX3’s application in a 4-port 3.0 USB hub.
configuration supporting ACA-dock
functionality.

Click here to learn more:
www.infineon.com/ez-pd-bcr
www.infineon.com/superspeed

www.infineon.com/usbhubs
www.infineon.com/usb2.0

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4-port single- and multi-TTs hub USB controllers

Part number

Number of ports

Number of TTs

I/O options​Temperature grade​

EZ-USB™ HX2VL

CY7C65634

2​

SingleSPI, I C, GPIO

Commercial

CY7C65632

4

SingleCY7C65642

4

Multi

CY7C65620/1

2​

SingleSPI

Commercial, industrial

CY7C65630/1

4SingleEZ-USB™ HX2LP

2Digital isolators

FamilyGate-driver ICs

Infineon’s EZ-USB™ HX2LP and HX2VL are Infineon’s first-generation high-speed hub controllers available in 2-port
and 4-port versions. These USB 2.0 hub controllers have integrated upstream and downstream transceivers, a USB
serial interface engine (SIE), USB hub control and repeater logic, and TT logic. Many of its external passive components
such as pull-ups and pull-down resistors are integrated into the chip, significantly reducing the overall bill of materials
required to implement a hub design.

480 Mbps

USB 2.0
PHY

USB 2.0
PHY

5 V/3.3 V

I2C/SPIROM

LS/FS/HSUSB
device480 Mbps

LS/FS/HSUSB
device480 Mbps

LS/FS/HSUSB
devicePORT
CTRL

USB 2.0
PHY
MCU

480 Mbps

PORT
CTRL

Hub repeater

Voltageregulator

LS/FS/HSUSB
device

RAM

PORT
CTRL

Intelligent powerswitches and modules

HS USB
control logic

Routing logic

USB 2.0 PHY

USB upstream port

HS USB traffic

Transaction
translator(TT)

480 Mbps

PORT
CTRL

Microcontrollers

12 Mbps

USB-C controllers
and peripherals

USB 2.0
PHY

PLL
Serialinterfaceengine(SIE)

IGBT discretes andsilicon power diodes

12 MHz XTAL or 12/28/47 MHz Clock

EZ-USB™ HX2VL

Key benefits– Up to 4 downstream ports– Very low power consumption (82 mA)– Integrated internal regulator, pull-up and pull-down resistors for all downstre-– Reduced area
– Reduced BOM

Powermanagement ICs

Features and benefits
Key features

500-950 V MOSFETs

EZ-USB™ HX2LP and HX2VL hub controllers

15-300 V MOSFETs

Applications

Solutions

USB hubs and USB Type-C
port controllers

am ports

Sensors

WBG semiconductors– Selectable XTAL/CLK inputs, power switch polarity, EEPROM interface– VID, PID configurable through external EEPROM– Integrated ARM® Cortex®-M0 CPU– LED status indicators – suspend, SS, and USB 2.0 operation

Click here to learn more:
www.infineon.com/ez-pd-bcr
www.infineon.com/superspeed

www.infineon.com/usbhubs
www.infineon.com/usb2.0

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361

Applications

Solutions

USB hubs and USB Type-C
port controllers

EZ-USB™ HX3PD

15-300 V MOSFETs

Industry’s first 7-port USB 10Gbps hub controller with power delivery

500-950 V MOSFETs

EZ-USB™ HX3PD is the industry’s first 7-port USB 10Gbps Type-C hub controller with power delivery, supporting two
USB-C + PD ports (one upstream and one downstream), and five downstream USB 10Gbps ports.

Gate-driver ICs

With five chips (two 4-port USB hub controllers, two USB PD controllers, and a dock management controller)
integrated into one, EZ-USB™ HX3PD is the most integrated USB 10Gbps hub in the market. This leads to a significant
reduction of BOM component cost and PCB footprint, which makes EZ-PD™ HX3PD a perfect fit for USB-C dongles,
docks, and monitors. Configurable shared USB 10 Gbps and USB 2.0 PHY functionality can improve USB 10Gbps signaltransmission quality, allowing board designers more freedom and simplifying USB-IF compliance.

Digital isolators

Block diagram

USB3.1PHY

UPSTREAM PORT CONTROLHUB CONTROLLER
ROUTING/AGGREATER ENGINE

5 V → 3.3 V
5 V → 1.2 V
1.2 V → 1.0 V

CC/PD USB2.0
CONTROL PHY

USB PDMCU

UPSTREAM PORT CONTROLRAM | ROMREPEATER

25 MHzIntelligent powerswitches and modules

IGBT discretes andsilicon power diodes

UPSTREAM PORT

DEBUG

HUB CONTROLLER
BATTERY CHARGING CONTROLADC/DACUPSTREAMBUFFERSDOWNSTREAMBUFFERCPU

POWER
MANAGMENTREPEATER

TRANSACTION
TRANSLATORS

Microcontrollers

HID

PLL

BILLBOARDUSB BRIDGESPI I/F

RAM | ROMROUTING LOGICCRYPTO ACCELATOR

ROUTING LOGIC

SPI
FLASH

USB2.0 CC/PDPHY CONTROL

USB2.0CC
PHY CONTROL

PORT2

USB3.1PHY

USB2.0CC
PHY CONTROL

PORT3

USB3.1PHY

USB2.0PHY

PORT4

USB3.1PHY

USB2.0PHY

PORT5

USB2.0PHY

USB2.0
PHY

PORT6

PORT7

Sensors

WBG semiconductors

PORT1

USB3.1PHY

Powermanagement ICs

USB3.1PHY

USB-C controllers
and peripherals

SCB/GPIO

Click here to learn more:
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www.infineon.com/usb2.0

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Solutions

EZ-PD™ HX3PD

Key features

Key benefits– Compliant with USB 3.1 gen 2– Upstream (US): 10 Gbps; Type-A or Type-C plus PD– Downstream (DS): 7 ports; 5x 10 Gbps, 2x 480 Mbps; 1 Type-C Plus PD, 2 Type-C– USB-IF compliant 2x4-port USB hubs with 2x USB-PD 3.0– Integrated total five chips into a single chip for BOM components and PCB board– Integrated DFP (RP) and UFP (RD) termination resistors– Integrated billboard controller– Charging support: BC v1.24, Apple Charging standard– PD policy engine configures power profiles dynamically– Charging DS without US connection– Optional signed firmware upgradable via dock management controller (DMC)– Integrated Crypto AES/SHA/CRC blocks for secured firmware upgrades via dock

Applications

Features and benefits

15-300 V MOSFETs

size reduction

only and 4 Type-A ports

management controller

500-950 V MOSFETs– Intel USB4 / Thunderbolt 4 Dock reference design available– Support USB PD 3.0, BC1.2, Apple, Samsung, and QC 4.0 charging standards– Provides USB PHY configurability to compensate signal loss over PCB traces

TB3

8

DP

PD MST hub

2 or 4DP-to-HDMI
converter

DP
DP

I2C

PC
tablet

6

2

DS1

US

USB 3.1 Gen2

CC

EZ-PD™ CCG5
USB-PD

DS2

EZ-USB™ HX3PD

DS3

10

USB 3.1 Gen2

10

USB 3.1 Gen2

10

USB 3.1 Gen2
DS5

USB GigEcontroller

DS7

DS6

2
USB 2.0

HDMI

USB 3.1 Gen2

USB 3.1 Gen2

6

12

USB 2.0

USB audio
controller
DS4

USB Type-C + PD
USB Type-C
10
USB Type-A
2
USB Type-A

Audio In/Out

requiring many discrete components‒ Thunderbolt dock requires pre-approved
USB-PD controller and a large BOM‒ USB-C dock must support USB PD and alllegacy charging standards‒ USB 3.1 Gen2 signal integrity is difficult tohandle at 10 Gbps
‒ USB 3.1 Gen2 and PD need FW upgrade tokeep pace with USB spec changes

Microcontrollers

Gigabit Ethernet

USB Type-C + PD

‒ Thunderbolt dock design is complex,

Digital isolators

TBT
controller

IGBT discretes andsilicon power diodes

2 or 4
8

EZ-USB™ HX3PD allows to solve several
challenges in the development of Thunderbolt
docs designs such as:Intelligent powerswitches and modules

Thunderbolt4 Dock

Gate-driver ICs

Application diagram

Boards
EZ-USB™ HX3PD CY6611

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

This evaluation kit is based on the CYUSB4347-BZXC, a 7-port evaluation kit
designed to demonstrate the USB 3.1 Gen 2 hub, USB PD 3.0, and USB battery
charging (BC 1.2) functionalities.

Click here to learn more:
www.infineon.com/ez-pd-bcr
www.infineon.com/superspeed

www.infineon.com/usbhubs
www.infineon.com/usb2.0

Supportwww.infineon.com/usb
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Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules
Microcontrollers

Infineon support for
USB-C controllers and peripherals

USB-C controllers
and peripherals

Useful links and helpful information

Powermanagement ICs

Further information, datasheets and documents

Sensors

WBG semiconductors

www.infineon.com/universal-serial-bus
community.infineon.com
mycases.infineon.com

Click here to learn more:
www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

Supportwww.infineon.com/smps
www.infineon.com/xxxxxxx

364

Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules
Microcontrollers
WBG semiconductors

Powermanagement ICs‒ Audio amplifier ICs‒ AC-DC LED driver ICs‒ DC-DC LED driver ICs‒ iMOTION™ integrated motor control solutions‒ MOTIX™ motor control ICs

Sensors‒ XDP™ SMPS controllers‒ AC-DC power management ICs‒ PFC controllers‒ PWM controllers and climate saver systems‒ Resonant LLC half-bridge controller ICs‒ NFC tag-side controllers‒ DC-DC converters– Digital power controller– Integrated POL voltage regulators– DC-DC digital multiphase controllers– Power stages– Power modules

USB-C controllers
and peripherals

Power management ICs

Click here to learn more:
www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

Supportwww.infineon.com/smps
www.infineon.com/xxxxxxx

365

Applications

Solutions

XDP™ SMPS controllers

XDP™ SMPS

15-300 V MOSFETs

IDP2308 and IDP2303A – digital multimode PFC+LLC combo controller

500-950 V MOSFETs

The IDP2308 and IDP2303A are high-performance digital combo controllers with integrated drivers and a 600 V depletion cell
designed for boost PFC and half-bridge LLC targeting switched mode power supplies (SMPS) from 75 to 300 W.

Digital isolators

Gate-driver ICs‒ Support non-AUX operation with the lowest standby performance and start-up cell
‒ Support multimode PFC operation for optimized efficiency curve‒ Configurable frequency setting for LLC soft-start and normal operation‒ Synchronous PFC and LLC burst mode control with soft-start to prevent acoustic noise‒ Excellent dynamic response by adaptive LLC burst mode
‒ Configurable and comprehensive protections for PFC/LLC/IC temperature‒ IEC62368-1 certified active X-cap discharge function‒ Flexible IC parameter setting with digital UART interface supports
PSU platform approach

Target application

Major difference

PackageTV embedded PSU

2 redundant PFC output
overvoltage protection

DSO-14 (with enhanced HV creepage distance)

IDP2303A

Adapter, general SMPS

Constant output voltage

DSO-16Microcontrollers

IDP2308ndIntelligent powerswitches and modules

Product

IGBT discretes andsilicon power diodes

Key benefits‒ Low BOM count due to high integration of digital control‒ No auxiliary power supply needed‒ Easy design of system schematic and PCB layout‒ Small form factor design‒ Higher system reliability‒ Shorter development cycles and higher design and production flexibility

USB-C controllers
and peripherals

IDP2303A – power adapter

Vout

Power
management ICs

VAC

SR IC

VS

HSGD HSVCC HSGND GD1
CS1

WBG semiconductors

GDO
CSO
VCC
ZCD

VCC

IDP2303A
GND

UART

HBFB
Sensors

HV

Click here to learn more:
www.infineon.com/ipolwww.infineon.com/iMOTION
www.infineon.com/digital-controller www.infineon.com/motix

Supportwww.infineon.com/xdp-smps
www.infineon.com/coolset

366Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules

IDP2308 – embedded PSU
Vout_1

Microcontrollers

VAC
Vout_2

VS

HSGD HSVCC HSGND GD1
CS1

ZCD

VCC

IDP2308
HV

GND

UART

HBFB

Power_on/
standbyPower
management ICs

Vbulk

USB-C controllers
and peripherals

GDO
CSO

Sensors

WBG semiconductors

Target applications‒ LCD TV power supply‒ General SMPS
‒ Power adapter

Click here to learn more:
www.infineon.com/ipolwww.infineon.com/iMOTION
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The XDP™ digital power XDPS2221 is a highly integrated device combining PFC boost and hybrid flyback (HFB) (asymmetrical
half-bridge as from literature) conversion features. The high level of integration allows for seamless operation and optimal controlof the two conversion stages, delivering class-leading performance. This innovative controller enables high power density designs
and high system efficiency, meeting international regulatory standards on power efficiency (such as EU CoC Version 5 Tier 2 andDoE Level VI) as well as an effective control of the wide output voltage for the latest USB-PD extended power range (EPR) standard
V3.1. It is very well suited to drive GaN-based devices, such as Infineon’s CoolGaN™ switches.
Typical application schematic
CoolMOSTM

CoolMOSTM
85 ... 264 VAC

HSGD

CX

HSVCC

PFCVS

OptiMOSTM

HSGND

500-950 V MOSFETs

XDPS2221 - digital hybrid flyback combo controller

Gate-driver ICs

XDP™ SMPS

15-300 V MOSFETs

Applications

Solutions

XDP™ SMPS controllers

VBUS

CoolMOSTM
LSGDDigital isolators

OptiMOSTM
GND

XDPS2221

CS

VD
Configurationand in-circuit
calibration

GATE GND

VCC

SR Controller
MFIO

VCC

GND

NTC

VCC

GATE

ZCD
FB

CC1
CC2

CC1
CC2

D+
D-

D+
D-

IGBT discretes andsilicon power diodes

RHV

USB-PD Type-C Connector

HV

USB type-C
port controller

FB
CATH

GND

Key benefits– IEC62368-1 certified active X-cap discharge function– High-performance multi-mode PFC with critical conduction mode operation– High efficiency multi-mode hybrid-flyback topology with adaptive resonant period– Supports USB-PD standard V3.1 extended power range (EPR) with wide output– Low no-load input standby power performance– Low BOM cost and count– Low standby and high efficiency across various line/load conditions– High power density and high switching frequency– Highly integrated combo controller for the PFC and hybrid flyback topology,– Easily configurable– DSO-14 (150-mil) package– Optimization via GUI tools

voltage up to 28 V

including a 600 V start-up cell with X-cap discharge functionality

Click here to learn more:
www.infineon.com/xdp-smps
www.infineon.com/coolset

Target applications:‒ Adapters and chargers– with ultra-high power density– with extended power range (EPR)

Sensors

For design support material,
please click here.

140 W reference design with PFC + hybrid flyback combo IC XDP™ XDPS2221
and CoolGaN™ GIT HEMTs:
This is a 140 W USB-PD type-C charger reference design. It demonstrates the highperformance of the PFC + hybrid flyback combo controller XDP™ digital power
XDPS2221 together with CoolGaN™ switches for wide input AC and wide output
voltage applications. Besides the combo IC XDPS2221, it features three CoolGaN™
CoolGaN™ power transistors 650 V as PFC and HFB main switches, OptiMOS™
BSC040N10NS5 as SR switch, the EZ-PD™ CCG3PA controller CYPD3175 serves as
the USB-PD controller, and the HEXFET™ IRF7240 as load switch.
Ordering code: REFXDPS2221140W1TOBO1

www.infineon.com/ipolwww.infineon.com/iMOTION
www.infineon.com/digital-controller www.infineon.com/motix

Support

REF_XDPS2221_140W1

Microcontrollers

Key features

Intelligent powerswitches and modules

Features and benefits

USB-C controllers
and peripherals

PFCCS

Power
management ICs

Vcc

WBG semiconductors

PFCGD

368

XDPS2222 – digital hybrid flyback combo controller

CoolMOSTM

CoolMOSTM
85 ... 264 VAC

Gate-driver ICs

The XDP™ digital power XDPS2222 is a highly integrated device combining PFC boost and hybrid flyback (HFB) (asymmetrical
half-bridge as from literature) conversion features. The high level of integration allows for seamless operation and optimal controlof the two conversion stages, delivering class-leading performance. This innovative controller enables high power density designs
and high system efficiency, meeting international regulatory standards on power efficiency (such as EU CoC Version 5 Tier 2 andDoE Level VI) as well as effective control of the wide output voltage up to 48 V for the latest USB-PD extended power range (EPR)
standard V 3.1.

HSGD

CX
PFCVS

HSVCC

500-950 V MOSFETs

XDP™ SMPS

15-300 V MOSFETs

Applications

Solutions

XDP™ SMPS controllers

OptiMOSTM

HSGND

VBUS

CoolMOSTM
LSGD

PFCGD

OptiMOSTM

PFCCS

Digital isolators

Vcc

GND

VD
Configurationand in-circuit
calibration

NTC

GATE GND

VCC

SR Controller
MFIO

VCC

GND

VCC

GATE

ZCD
FB

CC1
CC2

CC1
CC2

D+
D-

D+
D-

IGBT discretes andsilicon power diodes

XDPS2222

CS

USB type-C
port controller

FB
CATH

GND

Intelligent powerswitches and modules

RHV

USB-PD Type-C Connector

HV

Features and benefits

REF_XDPS2222_240W1

XDP™ XDPS2222: PFC + hybrid flyback combo IC for 240
W USB PD form factor reference design:‒ HFB ZVS operation of high- and low-side‒ Fast responding HFB peak current control‒ Harmonized PFC and HFB operations‒ 240 W output power‒ High system efficiency and high-power density design

USB-C controllers
and peripherals– Low no-load input standby power performance, meets DoE-7 standards– Low BOM cost and count– Low standby and high efficiency across various line/load conditions– High power density and high switching frequency– Easily configurable

Sensors

WBG semiconductors– High-performance multi-mode PFC with critical conduction mode operation– High-efficiency multi-mode hybrid-flyback topology– High-efficiency multi-mode hybrid-flyback topology– Combo controller including a 600 V start-up cell
– DSO-14 (150-mil) package

Microcontrollers

Key benefitsPowermanagement ICs

Key features

Click here to learn more:
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Applications

Solutions

XDP™ SMPS controllers

XDP™ SMPS

15-300 V MOSFETs

XDPS2201 – digital hybrid flyback controller

500-950 V MOSFETs

XDPS2201 is a multimode, digital configurable hybrid flyback controller that combines the simplicity of a traditional
flyback topology with the performance of a resonant converter. By utilizing two high-voltage MOSFETs, such as CoolMOS™,
the controller can drive both high- and low-side MOSFETs in an asymmetric half-bridge flyback topology. Both zero voltage
and current switching are achieved through means of regulating the polarity of the magnetizing current to increase
efficiency. Also, transformer leakage energy is recycled, thereby further increasing efficiency.

LSGD

RHV

RLSGD

VLSGD

QLS

CS
XDPS2201
UART

NP

RLSGS

HV
DBS

MFIO

CCS

-

VCr

N5
QSR

+

Cout1

+
Vout

Cout2
GND

Cr

RCS

Rshunt

Qvoc

RBS

RNTC

CVCC3
Rvoc3
VCC

Dvoc1

Dvoc2 Rvoc2

Dvoc3

Va
Rvoc1

CVCC1

ZCD

Czed

VDGATE GND VCC
SR
controller

Na

RzedH

GND
CVCC2

Iout

T

IGBT discretes andsilicon power diodes

CV8

IHB

VHB

HSGND

Gate-driver ICs

RH5GS

Digital isolators

CHSVCC

RzedL

Compensator
Vout

FB

FB
OC

PD controller
CompIntelligent powerswitches and modules

RVSL

HSVCC

Lm

QHS

GNDs

Key benefits– Zero voltage and current switching across all line and load conditions– Multimode operation (active burst mode, DCM, ZV-RCS, and CRM)
– Integrated high-side driver and 600 V start-up cell
– Single auxiliary transformer winding and resonant cap to supply power to IC– Comprehensive suite of protection feature sets
– Digital platform with configurable parameters– Reduce switching loss and achieve high efficiency– Optimize efficiency across various line/load conditions– Optimize light and no-load efficiency– Save BOM count and cost with no messy external driver– Easy to drive, low cost, and widely available off the shelf 60 V MOSFET– Fail-safe mechanism to limit output power in the event of PD controller failure– Avoid CCM operation and no potential of shoot-through with SR MOSFETREF_XDPS2201_170W_BPA

65 W USB-PD PPS Type-C demo board in a miniature form factor based on
XDPS2201.
‒ Up to 65 W output power with 31 W/in3 power density‒ Universal input range 90~264 VAC‒ Supported output: 5 V/3 A, 9 V/3 A, 12 V/3 A, 15 V/3 A and 20 V/3.25 A, 5~20 V/3 A‒ Peak efficiency of more than 93.8 percent‒ Low no-load standby input power of less than 75 mW OR Low no-loadstandby input power (less than 75 mW)
Ordering code: DEMOXDPS220165W1TOBO1

170 W AC-DC reference design with input voltage range for e-bikeand power tool battery chargers
Features‒ 170 W output power‒ Output voltage range from 18 to 42 V
‒ Up to 95% at full load
‒ Aimed for 24 V and 36 V battery packs
Ordering code: REFXDPS2201170WBPA2TOBO1

Support

DEMO_XDPS2201_65W1

USB-C controllers
and peripherals

Key features

Microcontrollers

Features and benefits

Click here to learn more:
www.infineon.com/xdp-smps
www.infineon.com/coolset

Powermanagement ICs

VS

Lr

RHSGD

VHSGD

WBG semiconductors

V8

Cin

HSGD

Sensors

RVSH

Vin

www.infineon.com/ipolwww.infineon.com/iMOTION
www.infineon.com/digital-controller www.infineon.com/motix370

Applications

Solutions

AC-DC power management ICs

AC-DC power management ICs

By offering a wide variety of highly efficient control ICs, we enable our customers to meet new demands like PFC regulations
and ultralow standby power requirements in a very cost-effective way. A comprehensive array of safety features helps tominimize the number of external components, reduces design in time, and improves the reliability of the SMPS.

PFC controller

650 V F3/F3R CoolSET™
ICE3Axx65ELJ
ICE3RBRxx65JZ
ICE3RBRxx65JG

Quasi-resonant
ICE5QSBG
ICE2QS02G
ICE2QS03G
ICC80QSG
Half-bridge and LLC resonant
ICE1HS01G-1
ICE2HS01G
Hybrid-flyback
XDPS2201

Digital isolators

Fixed-frequency
ICE5GSAG (125 kHz)ICE5ASAG (100 kHz)ICE3AS03LJG (100 kHz)ICE3BS03LJG (65 kHz)IGBT discretes andsilicon power diodes

700 V CoolSET™

700 V Gen5 CoolSET™
ICE5AR4770AG
ICE5AR4770BZSICE5AR4770BZS-1

Intelligent powerswitches and modules

Adjustable frequency
ICE2PCS01G (50-250 kHz)ICE2PCS05G (20-250 kHz)
ICE3PCS01G (OVP+brown-out)
ICE3PCS02G (OVP)
ICE3PCS03G (Brown-out)Stand-alone PWM

800 V CoolSET™
ICE5A/GRxx80AG
ICE5xRxx80xZ
ICE3A/BRxx80JZ
ICE3ARxx80CJZ
ICE3ARxx80VJZ
ICE3ARxx80JG
ICE5AR4780BZS-1
ICE5BR4780BZ-1
ICE5BR2280BZ-1
ICE5AR0680BZS-1

Microcontrollers

Fixed-frequency
ICE2PCS02G (65 kHz)ICE2PCS03G (100 kHz)PWM controller

USB-C controllers
and peripherals

Continuous conduction mode
(CCM) PFC

Gate-driver ICs

AC-DC power management ICs

Combo (PFC+PWM)

Quasi-resonant (QR) CoolSET™

IRS2505L

CrCM + LLC
XDP™ SMPS IDP2308 (DSO-14)
XDP™ SMPS IDP2303A (DSO-16)

650 V CoolSET™
ICE2QRxx65(Z)/(G)WBG semiconductors

Critical conduction mode
(CrCM) PFC

Power
management ICs

950 V CoolSET™
ICE5xR3995xZ
ICE5AR3995BZ-1
ICE5BR3995BZ-1

800 V CoolSET™
ICE2QRxx80Z/G
ICE5QRxx80BG

Sensors

CrCM + Hybrid-flyback
XDPS2221
XDPS2222

500-950 V MOSFETs

15-300 V MOSFETs

Technology leadership in power supply

Click here to learn more:
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www.infineon.com/digital-controller www.infineon.com/motix

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371

Solutions

PFC controllers

Gate-driver ICs

Compared to the first generation of ICE1PCS01/02, the second generation of CCM PFC controller ICs, ICE2PCS01/02, havelower internal reference trimmed at 3 V. They also have other advantages such as a wider VCC operating range, an improved
internal oscillator, and additional direct bulk capacitor overvoltage protection. Compared to the first and second generationsof ICE1PCS0x and ICE2PCS0x, the third generation of CCM PFC has the lowest internal reference trimmed at 2.5 V andintegrated digital control voltage loop. The third generation also features a low peak current limit at 0.2 V, an adjustable gate
switching frequency range from 21 to 100 KHz, and can synchronize with an external frequency range from 50 kHz to 100 kHz.
The third generation can now to achieve 95 percent efficiency at full load for the entire input voltage range.

500-950 V MOSFETs

High efficiency and very low system cost

15-300 V MOSFETs

Applications

Continuous conduction mode (CCM) PFC ICs

Digital isolators

Application diagram

2nd generation continuous
conduction mode PFC IC features

3rd generation continuous
conduction mode PFC IC features

ICE2PCS02G
ICE2PCS03G

ICE3PCS03G
✓

✓

✓

–

✓

✓

✓

Synchronous frequency

–

✓

✓

✓

Open loop protection

✓

✓

✓

✓

✓

Low peak current limit

-1 V

-1 V

-0.4 V-0.4 V-0.2 V

Brown-out protection

–

✓

✓

–

✓

Overvoltage protection

✓

✓

✓

✓

✓

✓

✓

Second overvoltage protection–

Intelligent powerswitches and modules
Microcontrollers
USB-C controllers
and peripherals

ICE3PCS01GPFC enable function–✓

Boost follower mode–✓

5 V regulator

–

✓

Power
management ICs✓

ICE3PCS02GWBG semiconductors–

Digital control voltage loop
Variable frequency‒ Fulfills class D requirements of IEC 61000-3-2‒ Integrated digital voltage loop compensation‒ Boost follower function‒ Bulk voltage monitoring signals, brown-out‒ Multi protections such as double OVP‒ Fast output dynamic response during load jump
‒ External synchronization‒ Extra-low peak current limitation threshold‒ SO8 and SO-14‒ Lead-free, RoHS compliant

Sensors‒ Fulfills class D requirements of IEC 61000-3-2‒ Lowest count of external components‒ Adjustable and fixed switching frequencies‒ Frequency range from 20 to 250 kHz‒ Versions with brown-out protection available‒ Wide input range supported‒ Enhanced dynamic response during load jumps‒ Cycle-by-cycle peak current limiting‒ Integrated protections OVP, OCP‒ DIP-8 and DSO-8‒ Lead-free, RoHS compliant
ICE2PCS01G
ICE2PCS05G

IGBT discretes andsilicon power diodes

ICE2PCS0xG
ICE3PCS0xG

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372

Applications

Solutions

PFC controllers

Critical conduction mode (CrCM) PFC

15-300 V MOSFETs

Easy design and lowest system cost

Fully compatible with the world standard, these devices are optimized to offer extremely compact and cost-effective
PFC solutions for electronic ballast and offline SMPS.

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

Application diagram

IRS2505LPBF

IGBT discretes andsilicon power diodes

IRS2505LPBF

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules‒ Critical conduction mode PFC control‒ High power factor and ultralow THD‒ Wide load and line range‒ Regulated and programmable DC bus voltage‒ No secondary winding required‒ MOSFET cycle-by-cycle overcurrent protection‒ DC bus overvoltage protection‒ Low EMI gate drive‒ Ultralow start-up current‒ 20.8 V internal Zener clamp on VCC‒ Excellent ESD and latch immunity‒ RoHS compliant‒ 5-pin SOT-23 package

Click here to learn more:
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373

Applications

Solutions

PFC controllers

15-300 V MOSFETs

PFC controller portfolio
Critical conduction mode (CrCM) PFC IC portfolio
VCC min.

VCC max.

Package

9V

20.8 V

SOT-23

Package

500-950 V MOSFETs

Product
IRS2505L

Gate-driver ICs

Continuous conduction mode PFC ICs
Product

Frequency – fSW

Current drives

ICE2PCS01G

50-250 kHz

2.0 A

ICE2PCS02G

65 kHz

2.0 A

ICE2PCS03G

100 kHz

2.0 A

ICE2PCS05G

20-250 kHz

2.0 A

Digital isolators

2nd generation continuous conduction mode PFC IC product portfolio

IGBT discretes andsilicon power diodes

DSO-8

Product

Frequency – fSW

ICE3PCS01G
ICE3PCS02G

Adjustable

Features

Package0.75 AOVP+brown-out

SO-140.75 A

OVP

SO-8

0.75 A

Brown-out

SO-8

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

ICE3PCS03G

Current drives

Intelligent powerswitches and modules

3rd generation continuous conduction mode PFC IC product portfolio

Click here to learn more:
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374

FF CoolSETTM‒ Selectable active burst mode entry/

800 V, and 950 V MOSFETs‒ Cascode configuration for brownin protection, fast and robust
start-up‒ Available in 65 kHz, 100 kHz, and125 kHz fixed switching frequency

exit profile to optimize standby
power and ability to disable‒ Supports CCM flyback operation
with built-in slope compensation‒ Integrated error amplifier for direct
feedback non-isolated flyback and buckwith load reduction to increase
efficiency

protection (only ICE5xRxxxxAG and
ICE5xRxxxxCZ)

minimize interruption of operation‒ DSO-8 package (stand-alone

controller), DIP-7 and DSO-12
package for CoolSET™

‒ Adjustable line input overvoltage

IGBT discretes andsilicon power diodes‒ Frequency reduction in tandem‒ VCC pin short-to-ground protection‒ Auto restart protection mode to

Digital isolators‒ Integrated CoolMOS™ in 700 V,

800 V

950 V

5.18 Ω

4.05 Ω

23 W
2.35 Ω

27 W
1.75 Ω

40 W
0.80 Ω

ICE5AR4770BZS

DSO-12

ICE5AR4770AG

DIP-7

ICE5AR4780BZSICE5BR4780BZ

DSO-12

ICE5GR4780AG

ICE5AR2280CZ
ICE5BR2280BZ
ICE5GR2280AG

Microcontrollers

700 V

DIP-7

17 W

ICE5AR0680BZSICE5GR1680AG

ICE5AR0680AG

ICE5AR3995BZ
ICE5BR3995BZ
ICE5BR3995CZ

DIP-7

USB-C controllers
and peripherals

RDS(on),max.

15 WIntelligent powerswitches and modules

5th generation fixed-frequency CoolSET™
Output power 1)
85 VAC~300 VAC
Ta=50°C3rd generation fixed-frequency CoolSET™

650 V

800 V

11.1~5.44 Ω

DIP-7

ICE3RBR4765JZ

DIP-8

ICE3BR4765J

DSO-12

ICE3RBR4765JG

DIP-7

3.42~2.62 Ω

23~26 W
1.96~1.71 Ω

30~34 W
1.11~1.05 Ω

ICE3RBR1765JZ
ICE3A1065ELJ

ICE3BR1765J

0.75~0.71 Ω
ICE3RBR0665JZ

ICE3A2065ELJ

ICE3BR0665J

ICE3AR1080VJZ

ICE3AR0680JZ

ICE3RBR1765JG
ICE3AR1580VJZ

37~41 W

ICE3RBR0665JG

ICE3AR4780JZ

ICE3AR2280JZ

ICE3AR4780VJZ

ICE3BR2280JZ

ICE3BR0680JZ

ICE3AR4780CJZ

ICE3AR2280VJZ

ICE3AR0680VJZ

ICE3AR10080CJZ

ICE3AR2280CJZ

ICE3AR4780JG

ICE3AR2280JG

ICE3AR1080JG
Sensors

DSO-1219~21 WPower
management ICs

RDS(on),max.

10~15 W

WBG semiconductors

Output power 1)
85 VAC~300 VAC
Ta=50°C

Gate-driver ICs

500-950 V MOSFETs

15-300 V MOSFETs

5th generation fixed-frequency PWM IC and CoolSET™

Applications

Solutions

PWM controllers

Click here to learn more:
www.infineon.com/ipolwww.infineon.com/iMOTION
www.infineon.com/digital-controller www.infineon.com/motix1) Calculated DCM maximum output power in an open-frame design based on Ta=50° C and Tj=125°C without copper area as heatsink

Supportwww.infineon.com/xdp-smps
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375Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes

Fixed-frequency PWM IC
Gen5

100 kHz

ICE3BS03LJG
DSO–8

125 kHz100 kHz-40°C~129°C

Intelligent powerswitches and modules

DSO–8

65 kHz-25°C~130°C

Start-up cell

Cascode✓

VCC on/off threshold

16 V/10 V

18 V/10.5 V

Soft-start time

12 ms

Frequency jittering✓✓

Modulated gate drive✓✓

Active burst mode

✓ (3-level selectable)✓

Slope compensation for CCM✓–

Frequency reduction✓–

Integrated error amplifier for direct feedback✓–

Adjustable line input overvoltage protection✓ with auto restart–

Adjustable brown-in protection✓ with auto restart–

VCC pin short-to-ground protection✓ (no start–up)–

VCC undervoltage protection✓ with auto restart✓ with auto restart

VCC overvoltage protection✓ with auto restart✓ with latch–up

Overload/open loop protection✓ with auto restart✓ with auto restart

10 ms

20 ms

✓ with auto restart and hysteresis✓ with latch–up–✓ with auto restart

External protection enable pin–✓ with latch–up

Sensors

Overtemperature protection
External blanking time extension

Microcontrollers

Switching frequency
Operating temperature

ICE3AS03LJG

USB-C controllers
and peripherals

Package

Gen3
ICE5GSAG

Power
management ICs

ICE5ASAGWBG semiconductors

FF PWM IC

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376

Applications

Solutions

PWM controllers

Fixed-frequency CoolSET™
650 V CoolSET™
Gen3
ICE3Axx65ELJ

DIP-7, DSO-12

Output power range

15 W

Operating temperature range-40°C~129°C

Gen3R
ICE3RBRxx65JZ(G)DIP-8

DIP-7, DSO-12

19 W~34 W

15 W~41 W

14 W~39 W-25°C~130°C-40°C~130°C

Switching frequency

100 kHz

Frequency reduction✓

100 kHz

65 kHz––Integrated error amplifier✓

Slope compensation for CCM mode✓–

VCC on/off threshold

16 V/10 V

18 V/10.5 V

Soft-start time

12 ms

20 ms

Active burst mode selection

3 level

1 level

65 kHz500-950 V MOSFETs

Package

Gen3R
ICE3BRxx65J

VCC pin short-to-ground protection

No start-up

VCC overvoltage protection

Auto restart

Latch

Auto restart

Overtemperature protection

Auto restart with hysteresis

Latch

Auto restart

External protection enable pin

-

Latch

Adjustable brown-in/-out protection

Brown-in only–

Adjustable line input overvoltage
protection

Only ICE5ARxx70AG–

Gate-driver ICs

Gen5
ICE5ARxx70AG(BZS)

20-300 V MOSFETs

700 V CoolSET™

–

Digital isolators

Auto restart–

Product available

ICE3RBR4765JZ
ICE3RBR1765JZ
ICE3RBR0665JZ
ICE3RBR4765JG
ICE3RBR1765JG
ICE3RBR0665JG

800 V CoolSET™

DSO–12
11 W~23 W

14 W~30 W

DIP–7

Package
10 W~40 W

Output power range

Gen3R
ICE3ARxx80VJZ

950 V CoolSET™
Gen5
ICE5BRxx80BZ

Gen5
ICE5ARxx80AG(BZS)

DIP–7

DIP-7

DIP–7, DSO–12

DSO–1215 W~39 W

15 W~22 W

15 W~40 W

15 W~27 W

Non-isolated buck output current
range

Gen5
ICE5GRxx80AG

450 mA~700 mA–25°C~130°C

Operating temperature range

100 kHz/65 kHz

Switching frequency

100 kHz

65 kHz

100 kHz––

Slope compensation for CCM mode

✓

✓

–
10 ms

Soft-start time
4-levelActive burst mode selection

3-level4-level–

VCC pin short-to-ground protection-40°C~129°C

125 kHz

65 kHz

100 kHz✓✓ (except
ICE5ARxx80CZ)

17 V/10.5 V

VCC on/off threshold

17 W

✓

–

Integrated error amplifier

DIP-7–40°C~129°C

100 kHzGen5
ICE5ARxx95xZ

550 mA–40°C~130°C

Frequency reduction

Gen5
ICE5BRxx95xZ

Only ICE5BRxx95BZ

✓

✓

✓

16 V/10 V

16 V/10 V

12 ms

12 ms

3-level3-levelNo start–up

No start-up

VCC overvoltage protection

Auto restart

Auto restart

Overtemperature protection

Auto restart with hysteresis

Auto restart with hysteresis

External protection enable pin

Auto restart

Latch

Auto restart–-

Adjustable brown-in/-out protection

Auto restart–

Brown-in only

Adjustable line input overvoltage
protection–

Auto restartYes (except
ICE5ARxx80BZS)

Auto restart

Only ICE5BRxx95CZ

ICE5AR0680AG
ICE5AR4780BZSICE5AR2280CZ
ICE5AR0680BZSICE5GR4780AG
ICE5GR2280AG
ICE5GR1680AG

ICE5BR3995BZ
ICE5BR3995CZ

Fast AC reset–✓

Product available

ICE3AR10080JZ
ICE3AR4780JZ
ICE3AR2280JZ
ICE3AR0680JZ
ICE3BR2280JZ
ICE3BR0680JZ

ICE3AR10080CJZ
ICE3AR4780CJZ
ICE3AR2280CJZ

Brown-in–
ICE3AR4780JG
ICE3AR2280JG
ICE3AR1080JG

ICE3AR4780VJZ
ICE3AR2280VJZ
ICE3AR1580VJZ
ICE3AR1080VJZ
ICE3AR0680VJZ

ICE5BR4780BZ
ICE5BR2280BZ

Microcontrollers

Gen3R
ICE3ARxx80JG

USB-C controllers
and peripherals

Gen3R
ICE3ARxx80CJZ

Power
management ICs

Gen3R
ICE3A(B)Rxx80JZ

IGBT discretes andsilicon power diodes

ICE3BR4765J
ICE3BR1765J
ICE3BR0665J

Intelligent powerswitches and modules

ICE3A1065ELJICE3A2065ELJWBG semiconductors

ICE5AR4770AG
ICE5AR4770BZSICE5AR3995BZ

Sensors

Fast AC reset

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377Solutions

PWM controllers

Applications

ICC80QSG

15-300 V MOSFETs

Single-stage flyback controller IC for battery charging

500-950 V MOSFETs

The ICC80QSG is a PWM controller for flyback topologies operating in quasi-resonant mode and valley-switching
DCM to achieve high power transfer efficiency across a wide operating range. The IC offers a wide power range anda comprehensive set of protections for battery charging applications. It is easy to design and requires a minimum
number of external components. The gate driver current enables reasonable designs up to 130 W with state-of-the-art
MOSFETs. System performance and efficiency can be optimized using Infineon CoolMOS™ P7 power MOSFETs.

Gate-driver ICs

V OUT +

Digital isolators

V supply,SSR

VS

SSR
Feedback
circuit

IGBT discretes andsilicon power diodes

GND

TD

VIN

Features and benefits
Key benefits– Quasi-resonant mode (QRM) operation with continuous conduction mode

(CCM)-prevention and valley-switching discontinuous conduction mode (DCM)
in mid to light load

– Secondary-side regulation (SSR)– Burst mode for very light loads– Adjustable maximum on-time– Comprehensive set of protections– Externally configurable hysteresis of brown-in and brown-out– Soft start– Ideal for battery charging current control– BoM cost reduction– High efficiency and low electromagnetic interference (EMI)– Low power consumption in stand-by mode
– Design flexibility with adjustable maximum switching frequency and configurability of brown-in and brown-out– Protection of primary components from overheating and saturation withhigher brown-out level at higher input/output power– Safe, robust, and reliable operation

USB-C controllers
and peripherals

Key features

Intelligent powerswitches and modules

CS

ICC80QSGNCoolMOSTM

Microcontrollers

GD

Sensors

WBG semiconductors

Applications
The ICC80QSG is tailored for battery charger applications
up to 130 W, such as cordless appliances, e-bike chargers,
power tools, consumer drones, and gardening tools.

Powermanagement ICs

Line
filter

VCC

L

ZCD

V OUT-

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378Solutions

Climate saver systems

Applications

Climate saver systems

15-300 V MOSFETs

Climate saver 80 PLUS® and 80 PLUS® Bronze

500-950 V MOSFETs

12 V

5V

Gate-driver ICs

3.3 V

PFC/PWM
5V

ICE3PCS01GPFC block

Digital isolators

80 PLUS® and 80 PLUS® Bronze
FF CoolSETTM

ICE3PCS02G
ICE3PCS03G
ICE2HS01G

IGBT discretes andsilicon power diodes

PWM block

ICE5GR4780AG
Standby block
FF CoolSET™

ICE5GR2280AG
ICE5GR1680AG
ICE3AR1080JG

Intelligent powerswitches and modules

ICE5AR0680AG

DC-DC

5V

DC-DC

3.3 V

Microcontrollers

Climate saver 80 PLUS® Silver

PWM

5V
Power
management ICs

PFC

USB-C controllers
and peripherals

12 V

80 PLUS® Silver

PWM blockFF CoolSETTM

ICE2PCS02G
ICE1HS01G-1

WBG semiconductors

PFC block

ICE2PCS01G

ICE5GR4780AG
Standby block
FF CoolSET™

ICE5GR2280AG
ICE5GR1680AG
ICE3AR1080JG

Sensors

ICE5AR0680AG

Click here to learn more:
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379

Climate saver 80 PLUS® Gold

Applications

Solutions

Climate saver systems

Climate saver 80 PLUS® Platinum

15-300 V MOSFETs

Certification for Infineon's PC power reference design
5V

DC-DC

500-950 V MOSFETs

DC-DC

3.3 V

Gate-driver ICs

12 V

PWM
Digital isolators

PFC

IGBT discretes andsilicon power diodes

5V

80 PLUS® Platinum
Certification for Infineon's PC power reference design
ICE3PCS02G

ICE3PCS01GPFC block

ICE3PCS03GPWM block

ICE2HS01G

Standby block
FF CoolSET™

ICE5GR1680AG
ICE3AR1080JG

ICE2HS01G
ICE5QR4780BG

Standby block
QR CoolSET™

ICE5QR2280BG
ICE5QR1680BG
ICE2QR1080G
ICE5QR0680BG

Sensors

WBG semiconductors

Powermanagement ICs

ICE5AR0680AG

ICE3PCS02G
ICE3PCS03GPWM block

ICE5GR4780AG
ICE5GR2280AG

Microcontrollers

ICE3PCS01G

USB-C controllers
and peripherals

80 PLUS® Gold
PFC blockIntelligent powerswitches and modules

FF CoolSETTM

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Applications

Solutions

PWM controllers

15-300 V MOSFETs

5th generation quasi-resonant PWM IC
and CoolSET™

QR CoolSETTM

pin short-to-ground protection‒ Peak power limitation with input
voltage compensation‒ Minimum switching frequency
limitation (no audible noise on
power units on/off)‒ DSO package (controller) andDSO-12 (CoolSET™ )Digital isolators

protection‒ Auto restart mode for VCC under-/overvoltage protection‒ Auto restart mode for open loop
and output overload protection‒ Auto restart mode forovertemperature protection
with hysteresis‒ Auto restart mode for output
overvoltage

IGBT discretes andsilicon power diodes

800 V MOSFET with cascodeconfiguration‒ Digital frequency reduction with
reduced load
‒ Novel quasi-resonant to minimize
the spread of switching frequency
between low- and high-line AC input‒ Selectable active burst mode
entry/exit profile‒ Auto restart mode for line
overvoltage protection‒ Limited charging current during VCCIntelligent powerswitches and modules‒ Auto restart mode for brown-out

Microcontrollers‒ Integrated CoolMOS™ in

5th generation quasi-resonant CoolSET™

RDS(on),max.
800 V

DSO-12

15 W

22 W

27 W

41 W~42 W

5.18 Ω

2.35 Ω

1.75 Ω

0.80 Ω

ICE5QR4780BG

ICE5QR2280BG

ICE5QR1680BG

ICE5QR0680BG

USB-C controllers
and peripherals

Output power 1)
85 VAC~300 VAC
Ta=50°C

650 V

5.44 Ω~5.18 Ω

2.62 Ω

23 W~26 W
1.96 Ω

31 W
1.11 Ω

38 W~42 W
0.75 Ω~0.71 Ω

DIP-7

ICE2QR4765Z

ICE2QR1765Z

ICE2QR0665Z

DIP-8

ICE2QR4765

ICE2QR1765

ICE2QR0665

DSO-12ICE2QR4765G

ICE2QR1765G

ICE2QR4780G

ICE2QR2280G
ICE2QR2280G-1

ICE2QR0680Z
ICE2QR1080G

Sensors

DSO-12ICE2QR0665G

ICE2QR2280Z

DIP-7
800 V

20 W~21 W

WBG semiconductors

RDS(on),max.

14 W~15 W

Powermanagement ICs

2nd generation quasi-resonant CoolSET™
Output power 1)
85 VAC~300 VAC
Ta=50°C

Gate-driver ICs

500-950 V MOSFETs

Zero crossing
detector

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1)

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Applications

Solutions

PWM controllers

Quasi-resonant PWM IC

Switching scheme

QR with 7 zero crossing counters

QR with 7 zero crossing counters

Operating temperature-40°C~129°C-25°C~130°C-25°C~130°C

Start-up cell

Cascode–✓

VCC on/off

16 V/10 V

12 V/11 V

18 V/10.5 V

Power saving during standby✓ active burst mode in QR switching
2-level selectable burst mode
entry/exit level–✓ active burst mode 52 kHz

✓

✓

✓

OLP blanking time

Fixed

Adjustable

Fixed

Auto restart timer

Through VCC charging/discharging

Setting with external components

Through VCC charging/discharging

Maximum input power limitation

Vin pin voltage dependent

Adjustable through ZC resistor

Adjustable through ZC resistor

VCC undervoltage protection✓ with auto restart✓ with latch✓ with auto restart

Adjustable output overvoltage protection✓ with auto restart✓ with latch✓ with latch

Adjustable line input
overvoltage protection

✓

–

–

Brown-out feature

✓

✓

–

VCC pin short-to-ground protection

✓

–

–

Target application

Home appliances, set-top-box, AUX
SMPS

AUX power supply to VCC eg., LCD TV
multi/main, audio main,
PDP TV multi/address

Self-power supply to VCC eg., smart
meter, industrial applications

2nd generation
ICE2QRxx80G-1

5th generation
ICE5QRxx80BG

15-300 V MOSFETs

DSO-8

Novel QR with 10 zero crossing
counters

Digital frequency reduction for highaverage efficiency

ICE2QS03G

500-950 V MOSFETs

DSO-8

Gate-driver ICs

ICE2QS02G

DSO-8

Digital isolators

ICE5QSBG

IGBT discretes andsilicon power diodes

FeaturePackage

Integrated MOSFET650 V and 800 V

Novel QR with 10 zerocrossing counters
800 V

800 V

High-voltage start-up cell✓

CascodePower saving during standby

Active burst mode fSW at 52 kHz

2 level selectable active burst
mode quasi-resonant

VCC on/off threshold (typ.)

18 V/10.5 V

18 V/9.85 V

16 V/10 V

Adjustable output overvoltage protection✓ with latch✓ with auto restart

VCC over/undervoltage protection✓ with auto restart✓ with auto restart

Overload/open loop protection✓ with auto restart✓ with auto restart

Overtemperature protection✓ with auto restart✓ (Auto restart with hysteresis)

Adjustable line input overvoltage protection–✓ with auto restart

Brown-out–✓ with auto restart

VCC pin short-to-ground–✓ (No start-up)

DIP-7
DIP-8
DSO-12

DIP-7
DSO-12

DSO-12

Sensors

WBG semiconductors

Package

Microcontrollers

QR with 7 zero crossing counters

Switching scheme

USB-C controllers
and peripherals

2nd generation
ICE2QRxxxxZ/G

Power
management ICs

FeatureIntelligent powerswitches and modules

Quasi-resonant CoolSET™

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Solutions

PWM controllers

Applications

5th generation Plus fixed-frequency CoolSET™

15-300 V MOSFETs

Single-stage controller IC for auxiliary power supply

Gate-driver ICs

500-950 V MOSFETs

The 5th Generation Plus fixed-frequency CoolSET™ is a PWM controller that helps achieve high power transfer
efficiency across a wide operating range and includes a comprehensive set of protections. The IC is easy to design
and requires a minimum number of external components.

FF CoolSETTM

Digital isolators

DIP-7 package

Key features

Key benefits

VCC

GATE

Voltagereference

Tj > Tjcon_OTP

Internal
Bias

50 µs
blanking
time

S

O

R
Tj < Tjcon_OTP TJHYS_OTP

tVCC_OVP_B

C20

VVCC_OVP

OTP
mode

USB-C controllers
and peripherals

Undervoltage lockout

Autorestart
protect

CoolMOS™

fOSC
OSC

D1

Power
management ICs

fOSC_2
OSC with
Jitter andfrequency
reduction

VERR

DRAIN

Thermal Protection

Power management

Nonisolated
detector

Intelligent powerswitches and modules– Ease of power scaling and high reliability– Fast and robust start-up– Flexibility of design– Improves light load efficiency and EMI– Optimize standby power and disable burst mode to eliminate audible noise– Minimize interruption of operation– Stable operation ensuring higher power delivery– Design non-isolated topologies with lesser external component

Microcontrollers– Integrated avalanche rated CoolMOS™ in 700 V,800 V and 950 V MOSFETS– Cascode configuration– Available in 65 kHz,100 kHz fixed switching frequency– Frequency reduction in tandem with load reduction and jitter– Adjustable Burst Mode
– Auto restart protection mode
– Supports CCM Flyback operation with built-in slope compensation– Integrated error amplifier

Error amplifier

IGBT discretes andsilicon power diodes

Features and benefits

ERR

VERR_REF

Gate driver

VREF

Gate
drive

Protection and PWM digital control

RFB
Overload protecion

25kΩ

Burst modelevel select

C9

Slope
Comp

Peak current
limit

Active burst control
VFB_EPHB
VFB_EPHB
No burst

VREF

VCS_BLP
VCS_BHP

C13

FB

VCS_NxC15
Activeburst modetFB_BE_B

2pF

CPWM

V1

PWM
comparator

WBG semiconductors

GND

tFB_OLP_B

C12

VFB_OLP/
VFV_LB/

Gate
drive

Leadingedge
blanking
tCS_LEB

10kΩ

CS
1pF

D2

C15a

C10

Soft startPWM OPVFB_BOn

Delay
tCS_STG

VPWM

C19
VCS_STG

GPWM

C11
VFB_BOff

Current mode

Sensors

Burst
mode
detectSlope compensation / current limiting

Output power 1)
85 VAC~300 VAC
Ta=50°C
RDS(on)4.13 Ω/4.73 Ω

700 V

ICE5AR4770BZS-1

800 V

DSO-1215 W

Support

5th generation Plus fixed-frequency CoolSET™
17 W
3.46 Ω

ICE5AR4780BZS-1
ICE5BR4780BZ-1

23 W

40 W

2.13 Ω

0.71 Ω

ICE5BR2280BZ-1

ICE5AR0680BZS-1

ICE5AR3995BZ-1
ICE5BR3995BZ-1

950 V

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Best-in-class converters and controllers to support LLC HB resonant mode topology

LLC resonant (no SR)Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

no load and/or bus overvoltage‒ Multiple protections in case of fault‒ Input voltage sense for brown-out protection‒ Open loop/overload fault detection by FB pin with
auto restart and adjustable blanking/restart time
‒ Frequency shift for overcurrent protection‒ Lead-free, RoHS compliant package‒ DSO-8 package

primary-side controller controller‒ Multiple protections for SR operation‒ Tight tolerance control‒ Accurate setting of switching frequency and dead time
‒ Simple system design‒ Optimized system efficiency‒ Multiple converter protections: OTP, OLP, OCP, latch-off enable‒ External disable for either SR switching or HB switching‒ Lead-free, RoHS compliant package‒ DSO-20 package

Sensors

ICE2HSO1G‒ Novel LLC/SR operation mode and controlled by

USB-C controllers
and peripherals

LLC resonant + SR

Microcontrollers

Resonant LLC half-bridge controller IC
with integrated synchronized rectifier control

Powermanagement ICs

ICE1HS01G-1‒ Novel and simple design (12 components + HB driver)‒ Minimum operating frequency is adjustable externally‒ Burst mode operation for output voltage regulation during

WBG semiconductors

Application diagram – LLC resonant (no SR)

Digital isolators

Gate-driver ICs

Resonant mode power supplies vary over SMPS circuits where the switching losses are significantly reduced by adapting
zero-voltage or zero-current switching techniques, also known as soft-switching techniques. In non-resonant mode SMPS
circuits, the switches are subjected to hard switching. LLC HB resonant operates in ZVS mode, whereby switching loss is
reduced to operate the converter at a higher switching frequency. In addition, the converter can be further optimized at
a high input voltage. This topology eliminates the secondary filter inductor, adopts better rectifier diodes, and reduces
secondary conduction loss. The converter utilizes the leakage and magnetizing inductance of a transformer. With themagnetic integration concept, all the magnetic components can be built in one magnetic core.

500-950 V MOSFETs

Resonant LLC half-bridge controller ICs

15-300 V MOSFETs

Applications

Solutions

Resonant LLC HB

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Applications

SolutionsHB LLC resonant

ICE2HS01G
DSO-20

up to 600 kHz

up to 1 MHz

LLC soft-start✓✓

LLC burst mode✓✓

Adjustable minimum frequency✓✓

Overload/open loop protection✓✓

Mains undervoltage protection with hysteresis✓✓

2-level3-levelDrive signal for synchronous rectification–✓

Adjustable dead time–✓

External latch-off and OTP–✓

LCD-TV, audio, etc.

Server, PC, LCD-TV, etc.

Overcurrent protection

Target application

Product

Frequency – fSW

Dead time

500-950 V MOSFETs

Switching frequency range

15-300 V MOSFETs

DSO-8

Current drives

Gate-driver ICs

ICE1HS01G-1

Package

LLC resonant (no SR)

30 kHz~600 kHz

380 ns

1.5 A

DSO-8

ICE2HS01G

Resonant LLC half-bridge controller IC withintegrated synchronized rectifier control(LLC resonant + SR)

30 kHz~1 MHz

100 ns~1000 ns

0.3 A

DSO-20Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

ICE1HS01G-1

Digital isolators

LLC half-bridge controller IC
Package

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Applications

Solutions

NFC tag-side controller

NAC1080 – NFC smart actuation controller

IGBT discretes andsilicon power diodes

Digital isolators

Users can program this NAC1080 with the industry-wide standard solutions for Cortex®-M0 processors. Especially for thesmart lock application, SDK packages for firmware and mobile application development in Android and iOS systems areavailable to support a fast development cycle.

Gate-driver ICs

The flexible IC architecture and the smart partitioning between hardware and software enable customers to maximize
software-defined functions. Furthermore, the NAC1080 includes hardware security functions such as a secure area inflash, a 128-bit AES accelerator, and a true random generator. A separate secure element can be connected via the digitalinterface on demand.

500-950 V MOSFETs

15-300 V MOSFETs

The NAC1080 is an NFC actuation controller with integrated half-bridge and energy harvesting modules, enabling
the cost-effective development of passive smart actuators like passive locks. The low-power Arm® Cortex®-M0 based
microcontroller with integrated NFC frontend, motor driver, and energy harvesting function enables customers todevelop smart actuation devices with minimum system BOM requirement.

I/O

LB

M_B

NAC1080
VCC_HB

VCC_CBGND

for battery devices‒ NFC configuration ofelectronic devices

VCC
GPIO2

Microcontrollers

GPIO1

Applications‒ Passive/active NFC lock
‒ Emergency power sourceIntelligent powerswitches and modules

M_A
M

LA

– NFC interface compliant to ISO 14443 type A– Arm® 32 bit Cortex®-M0 microcontroller core
– Dual-operation mode: passive or battery mode
– 60 kB NVM, 16 kB RAM, 16 kB boot ROM– Integrated H-bridge– Energy harvesting output– 128-bit AES accelerator, true random number generator– A single-chip solution to build batteryless NFC actuators, like passive lock
– Batteryless IoT devices without battery exchange efforts and costs– Intuitive connection via smartphone to enable cloud-based business models– Minimum system BOM for easy and cost effective implementation

Powermanagement ICs

Key benefits

Sensors

WBG semiconductors

Key features

USB-C controllers
and peripherals

Features and benefits

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Applications

Solutions

NFC tag-side controller

NGC1081 – NFC smart sensing controller

500-950 V MOSFETs

15-300 V MOSFETs

The NGC1081 is an NFC sensing controller with an integrated temperature sensor and ADC/DAC sensing unit in addition
to the features provided by NAC1080. The low-power Arm® Cortex®-M0 based microcontroller with integrated NFC
connectivity, sensing unit, and energy harvesting function in one device enables customers to develop miniaturized
smart edge computing/sensing devices with minimum system BOM requirement.
NGC1081 works in both passive mode and battery mode. In passive mode, it can communicate wirelessly with a

Gate-driver ICs

mobile phone while also harvesting energy from the NFC field to power the whole sensing system, including the IC
and its connected sensors. Working in battery mode simplifies the implementation of many sensing applications, like
temperature, humidity, and vibration tracking devices. With the smartphone as the human interaction interface, thesystem functions are widely extended to cloud functionalities, such as uploading data and data analysis on the cloud.
NGC1081 has a 12-bit SAR ADC and a 10-bit DAC. It provides one analog output (DAC) and four analog inputs (ADC). The

I2C

VCC

MB
Sensor 1
Sensor 2

LB

NGC1081
AN_IN1
AN_IN2VCC
VCC_CB
GND

Sensor n

AOUT
NTC

AN_OUT
Different sensors

USB-C controllers
and peripherals

Microcontrollers

GPIO15AN_IN4

Applications‒ Passive sensor device, inlay‒ Medical, healthcare sensor patch‒ Data logger, temperature logger‒ Radiator thermostat‒ Galvanic isolated sensor front end

Intelligent powerswitches and modulesLA

I2C SPI/UART
MA

IGBT discretes andsilicon power diodes

GPIO

SPI
GPIOs

Digital isolators

ADC has three sample and hold stages, which allow parallel signal sampling. A temperature sensor is integrated as well.
Users can program the NGC1081 with the industry-wide standard solutions for Cortex®-M0 processors.

Key features

Key benefits– NFC interface compliant to ISO 14443 type A– Arm® 32-bit Cortex®-M0 microcontroller core
– Dual-operation mode: passive or battery mode
– 60 kB NVM, 16 kB RAM, 16kB boot ROM– 12-bit SAR ADC, 10-bit DAC– Integrated temperature sensor– Integrated H-bridge– Energy harvesting output– 128-bit AES accelerator, true random number generator– A single-chip solution to build a batteryless smart sensor for miniaturizedPowermanagement ICs

Features and benefits

design with low BOM cost

– Multiple power supply options for sensors: GPIO for low current or energy
harvesting output for high current– Natural galvanic isolated sensing interface for applications with direct humanbody contact

Sensors

WBG semiconductors– Intuitive connection via smartphone to enable cloud-based business models

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Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules
Microcontrollers
USB-C controllers
and peripherals

DC-DC convertersPowermanagement ICs

Highest density end-to-end power management solutions

Sensors

WBG semiconductors

As the innovation leader for power semiconductor and energy efficiency technologies, we are continually developing
and working on the best solutions for your applications. Our DC-DC converter portfolio includes integrated powerstages, switching regulators, integrated POL converters and integrated POL voltage regulators, as well as digital
multiphase controllers and digital power controllers (see XDPP1100 digital power controller family).

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Solutions

Digital Power Controller

Key features

Key benefits– Application optimized digital control– State machine based digital control for up to 2 independent voltage loops– Configurable feedback control dedicated hardware peripherals– ARM® Cortex®-M0 processor– Accurate current sense– High-performance ADCs
– Small footprint– Pre-programmed advanced digital control reduces firmware development– Allows design diffraction and customization– Optimized for isolated converter topologies and Brick applications brings

500-950 V MOSFETs
IGBT discretes andsilicon power diodes

Features and benefits

Gate-driver ICs

Infineon supplies the XDPP11xx family of highly integrated, programmable, and configurable digital power controllers
that enable the design of high-density and high-power 48 V DC-DC converters with isolated and non-isolated
topologies requiring minimum external components. The XDPP11xx architecture consists of a low-latency statemachine-based digital control loop with associated firmware, a high-performance Analog-Front-End (AFE) for control
loop feedback, a Power Management Bus (PMBus1.3) interface for system communication, GPIOs, and an ARM®
CORTEX®-M0 subsystem for housekeeping, telemetry, and Blackbox functions. With the onboard OTP and provided
Graphic User Interface (GUI), firmware customization, optimization, and configuration make it easy to develop
differentiated solutions. For ease of design and fast time-to-market with minimum R&D cost, XDPP11xx products
are supported by EVB board and several reference designs optimized for 48 V IBC, such as AI servers datacenter andTelecom infrastructure such as base unit and radio unit. In addition to offering products of proven quality, a competentglobal power supply team supports our telecom/ AI server customers in designing telecom/ AI server products andsystems in collaboration with our channel partners.

Digital isolators

The smallest DPC with PMBus interface

15-300 V MOSFETs

Applications

Digital Power Controller

superior performanceIntelligent powerswitches and modules– Enhanced control and excellent dynamic transient performance– No external comparator allows lower BOM and denser designs information– 4x4 mm package makes high-density design possible

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Application diagram

Functional block
Hot-swap stage
DC-DC stage

Product Family

SupportProduct portfolio
Product MOSFET technology and voltage class

Positive rail hot-swap controller

XDP710-002

Negative rail hot-swap controller

XDP700-002

Digital PWM controller XDP™

XDPP1100-Q024

OptiMOS™ 100V Linear FET 100 V
OptiMOS™ 200 V 150 V 100 V 80 V 60 V 40 V 25 V

XDPP1100-Q040
Digital PWM/LLC controller XDP™

XDPP1140-100B
XDPP1148-100B

Gate driver EiceDRIVER™

2EDL8 family
2EDi family
2EDN family
1EDN family

Digital isolator ISOFACE ™

2DIB family
4DIR family

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Solutions

Digital Power Controller

Application schematic
XDPP1100 Full-Bridge to Full-Bridge

XDPP1100 Dual Loop Half-Bridge Center Tap

Driver
VIN

VIN

Q1

VOUT

VRECT

DriverIsolated driver

500-950 V MOSFETs
Gate-driver ICs

VO1

LO

LO
C1

Llk

Microcontrollers

Q2

CO

VSEN

VRSEN
CO

PCB
CopperIsolated driver

Digital isolatorsIntelligent powerswitches and modules

The XDPP1100, the first member of the Infineon’s feature-rich Digital Power Controller product family, is a highly
programmable and versatile device with advanced features that is an ideal power controller for isolated and nonisolated modern high-density, high-power systems deployed in AI Servers, 48 V server motherboards, telecom
infrastructure, and industrial 4.0 applications. A combination of low-latency state machine-based digital control loopwith associated firmware, high-performance AFE for current and voltage sensing and feedback, Power Management Bus(PMBus™1.3) interface for system communication and an Arm® Cortex®-M0 sub-system for housekeeping integrated
into a single chip, supplemented by Graphical User Interface (GUI) and EVB, enables the design of a family of DCDC power solution for the targeted application with a fast time-to-market. Built-in non-volatile memory provide
extensive programming and customization of functions such as frequency dithering, GPIO signal timing, non-linear
transient suppression schemes, soft start timing and sequencing, and feature rich protection response. The XDPP1100
architecture allows maximum design flexibility and provides, excellent digital control for, transformer based isolated
DC-DC converters and non-isolated topologies. All the major fixed frequency topology designs, such as pulse widthmodulation (PWM) half-bridge (HB), PWM full-bridge (FB), phase-shift full-bridge (PSFB), active clamp forward (ACF),
open loop fix-frequency resonant half-bridge or full-bridge (FF open-loop LLC), non-isolated Buck, Boost and Buckboost may be achieved in compact 4x4 mm 24-pin VQFN Package. The XDPP1100 supports interleaved operation of
any of the topologies mentioned. To support post-buck or post–boost regulation XDPP1100 is also offered in a 6x6 mm
40-pin VQFN package. XDPP1100 is supported by several reference designs in various topologies ideal for AI servers, 48 V
server motherboards, and Telecom infrastructure for a faster time-to-market and reduced development cost.

IGBT discretes andsilicon power diodes

The smallest DPC with PMBus™ interface

15-300 V MOSFETs

Applications

XDPP1100 Digital Power Controller

S1

S2
VRREF

VREF

C2
CopperDriverDriver

NTC

ISEN

PWM1
PWM2

IREF
PWM6

Isolator

PWM5

SRA
B

USB-C controllers
and peripherals

A

PWM1

XDP1100-Q024

S3

BVSEN

S4
BTSEN

BVREF

C4

TSBN

XADDR1

VREF1

VDD

CO

ISEN
VSEN1

VD12

Llk

IREF

EN

IMON

C3

DriverIsolator

PWM5
PWM6

AUX power

BISEN
PWM8

SYNC

PWRGD

XDPP1100-Q040

VO2
LO
Q4

BIREF

AUX supply
Controller VDD
Primary-side drive
Secondary-side drive
VIN sensePowermanagement ICs

VREF2

PWM7

PWM2

PWM3

VSEN2

SCL
SMBALERT

to system

PWM4

SDA

PRISENI2C to GUI

PWM5

PWM6

Q3

Driver

Key features

Key benefits– State machine-based digital control for up to two independent voltage loops– Configurable feedback control– Arm® Cortex®-M0 processor– Up to 16 Configurable GPIOs, 12 high-resolution Digital Modulated PWM outputs– Input voltage feed-forward control scheme– Small footprint– Digital compensator increases stability and saves external BOM cost
– Flexible mode: voltage mode, peak current mode, and constant current and

WBG semiconductors

Features and benefits

power mode

Sensors– Fast process and control– Easy to use and fast time-to-market with digital interface– Fully manageable and controllable with both input and output information– 4x4 mm package makes high-density design possible

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390Applications

Solutions

Digital Power Controller

EVAL_600W_FBFB_XDPP
EVAL_XDPP1100_Q024_DB

Gate-driver ICs

500-950 V MOSFETs

15-300 V MOSFETs

Evaluate Infineon DC-DC digital IC controllers
for telecom and server applications‒ XDPP1100-Q040‒ 2x 2EDL8024G,‒ 2x 2EDL8124G‒ 4x BSC050N10NS5‒ 8x BSC010N04LS6

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

Reference Designs‒ REF_275W_HBCT_XDPP1100 (released reference design)‒ REF_600W_FBFB_XDPP1100 (released reference design)‒ REF_1KW_LLC_XDPP1100 (released reference design)‒ VD_REF_XDP_48V_TO_POL (virtual design)‒ VD_1000W_GaN_PSFB_XDP (virtual design)‒ REF_780W_INV_BB_XDP (virtual reference design)‒ REF_750W_FBFB_50V_QB (virtual reference design)‒ REF_1100W_4TO1_ZSC_QB (released reference design; Infineon Topology)‒ REF_500W_HSC_6V (released reference design, Infineon Topology)‒ REF_600W_DRHSC_XDP (released reference design, Infineon Topology)‒ REF_DRHSC_2200W (virtual design, Infineon Topology)

Click here to learn more:
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XDPP1140\XDPP1148 Digital Power Controllers

15-300 V MOSFETs

The smallest DPC with PMBus™ Interface

IGBT discretes andsilicon power diodes

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

The XDPP1140\XDPP1148 are new members of Infineon’s feature-rich Digital Power Controller product family thatare highly programmable and versatile devices with advanced features that make them an ideal power controller for
isolated and non-isolated modern high-density, high-power systems deployed in AI servers, 48 V server motherboards,
telecom infrastructure, and industrial 4.0 applications. A combination of low-latency state machine-based digital
control loop with associated firmware, high-performance AFE for current and voltage sensing and feedback, PowerManagement Bus (PMBus™1.3) interface for system communication, and an Arm® Cortex®-M0 sub-system forhousekeeping integrated in a single chip, supplemented by Graphical User Interface (GUI) and EVB enables design offamily of DC-DC power solution for the targeted application with a fast time to market. Built-in non-volatile memory
provides extensive programming and customization of functions such as frequency dithering, GPIO signal timing,
non-linear transient suppression schemes, soft start timing and sequencing, and feature rich protection response.
Both XDPP1148 and XDPP1140 are provided in a 4x4 mm 24-pin VQFN package and are backward compatible with
XDPP1100; however, enhanced features are designed to provide excellent digital control for resonant LLC topologies,
including half-bridge (HB) LLC, full-bridge (FB) LLC, phase-shift full-bridge (PSFB) LLC. XDPP1140\XDPP1148
also support all the major fixed frequency topologies such as pulse width modulation (PWM) HB, PWM FB, PWM
PSFB, active clamp forward (ACF), non-isolated Buck, Boost, and Buck-boost. The XDPP1148 supports the interleaved
operation of Buck, Boost, and Buck-boost.
Block diagramFB LLC, 4 8V to 12 V, XDPP114x, DatacomIntelligent powerswitches and modules

FB-FB, -48 V to 50 V, XDPP1140, Telecom
SRB

DriverDriverS4

Q1
optional

VA
Lm

Q2

C o1

CR

C o2

S2

S1

VB

LD

PCB
Copper+Vo-

CO

PCB copper

Driver

Q4

Temp
sense

DriverIsolated driverA

Isolator

SRA

Isolated driver

B

- +

PWM1

PWM2

PWM3

I2C to GUI

VSEN2
VREF2

SCL

IREF

IREF2

SMBALERT

ISEN2

SYNC

EN

VSEN

EN

VSEN1

PWRGD

VREF

PWRGD

VREF1

ISEN

TSBN

To systemXADDR1

Temperature sense

IMON

XDP1140-Q024

VDD

TSEN

XADDR1

VDD

VD1 2

IMON

To System

PRISENXDPP114x

SYNC

VD12

SMBALERT#

USB-C controllers
and peripherals

SDA

ISEN1

SCL

PWM4

PWM6

PWM4

PWM3

PWM1

PWM2

IREF1

SDA

I2C to GUI

PWM5

1.2V

TX
RX

To PFCVOUT

Microcontrollers

Driver

Vout

Lo

LR

Q3

PRISEN

DriverIMON

3.3VDD

AUX power

Vin_sensePowermanagement ICs

VinDC

Aux Supply:
Controller VDD
Primary side Drive
Secondary-side Drive
VIN sense

Vin_sense

Features and benefits
Key features

Key benefits– High-performance (100 MHz) current and Voltage ADCs
– Configurable feedback control– Frequency modulation– Hardware based feed-forward– Current sense with high tracking slew rate
– Fast GPIO input– Supports Resonant LLC Topologies– Flexible mode: voltage mode, peak current mode, and constant current and power– Supports close loop LLC; Hybrid soft-start for LLC– Supports Buck-boost, Boost Topologies– Supports symmetric input for primary current sense– Configurable offset for secondary current sense– Allows using external signal to define SR rising or falling edge

Support

EVAL_750W_FBFB_XDPP1140
Infineon Evaluation Board DC/DC digital IC controllers fortelecom and server applications‒ XDPP1148-100B‒ 8x ISC031N08NM6‒ 6x BSC110N15NS5‒ 5x 2EDF7275K

Reference Designs‒ REF_IBC_1600W_GAN (to be released reference design in 2024)
Click here to learn more:
www.infineon.com/xdp-smps
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WBG semiconductors

S3

VIN

Sensors

VinDC

Applications

Solutions

Digital Power Controller

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Applications

Solutions

Digital Power Controller

Digital Power Controller portfolio
XDPP1140-100B

XDPP1148-100B

6

12

6

6

1

2

1

1

Number of voltage sense ADC

2

3

2

1

Number of current sense ADC

1

2

1

2

General purpose ADC channels

4

6

4

4

OTP

64 kB

64 kB

64 kB

64 kB

RAM

32 kB

32 kB

32 kB

32 kB

ROM

80 kB

80 kB

80 kB

80 kB
Up to 2 MHz

DPWM switching frequency

Up to 2 MHz

Up to 2 MHz

Up to 2 MHz

Secondary serial bus ( I2C M/S)

-

✓

-

SPI Serial bus

-

-

✓

✓

UART

✓

✓

✓

✓

PMBus

✓

✓

✓

✓

Watchdog

✓

✓

✓

✓

On chip oscillator

✓

✓

✓

✓

Sync in and sync out functions

✓

✓

✓

✓

Temperature sense inputs

1

2

1

1

Enable inputs

1

2

1

1

Power good outputs

1

2

1

1

Total GPIO (General purpose I/O pins)

11

16

11

11

Package offering

VQFN-24 (4x4 mm2)

VQFN-40 (6x6 mm2)

VQFN-24 (4x4 mm2)

VQFN-24 (4x4 mm2)

Number of loops

1

1

1

2

Number of ramps

2+1

2+1

2

2

Number of VS ADC

1

2

2

2

Number of IS ADC

2

1

1

2

500-950 V MOSFETs

High-resolution DPWM outputs (78.125ps resolution)
Number of high-speed independent feedback rails

15-300 V MOSFETs

100 MHz

Gate-driver ICs

100 MHz

Digital isolators

XDPP1100-Q040
100 MHz

IGBT discretes andsilicon power diodes

XDPP1100-Q024
100 MHzIntelligent powerswitches and modules

Product Feature
ARM®-M0 core processor

Topology

✓

ACF

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

PSM-FB/CT; PSM-FB/FB✓✓

LLC-HB; LLC-FB; LLC-PSFB; secondary CT or FB

✓

✓

Buck

✓

✓

✓

✓

Buck-boost

✓

✓

✓

✓

✓

✓

✓

Boost

✓

Interleaved Buck✓✓

Interleaved Buck-boost✓✓

Interleaved Boost✓✓

Interleaved HB/CT; HB/FB; FB/CT; FB/FB; PSM-FB/CT;
PSM-FB/FB✓

Interleaved ACF✓

Dual loop (single phase of each loop)

Microcontrollers

FB/CT; FB/FB (PCMC)✓✓

USB-C controllers
and peripherals

✓

Power
management ICs

HB/CT; HB/FB
FB/CT; FB/FB (VMC with Flux balance)✓✓

Interleaved 3-level Buck+ open loop converter✓

SupportSensors

WBG semiconductors

Interleaved Buck + open loop converter

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Solutions

Protection IC

Applications

Protection IC

15-300 V MOSFETs

Hot swap controllers with a programmable digital SOA control

500-950 V MOSFETs

Infineon XDP™ XDP7x0 family is the industry’s first wide input voltage range hot swap and system monitoring
Controller IC with a programmable digital SOA control that is designed to meet the reliability and high availability
requirements of pluggable Artificial Intelligence (AI) accelerator cards and baseboards and spectrum of telecomand datacom applications including remote radio head power, base station power distribution, and live and passive
antenna systems of 5G and telecom UPS.

Digital isolators

Gate-driver ICs

XDP™ XDP7x0 family architecture employs a three-block architecture that combines high-precision telemetry formonitoring and fault detection, digital SOA control optimized for power MOSFETs, and integrated gate drivers forn-channel power MOSFETs. The advanced closed-loop SOA control and the fully digital operating mode of XDP™
XDP7x0 results in lower bill-of-material (BOM) costs due to the minimum number of external components and reduced
design time, allowing faster time to market. The XDP™ XDP7x0 can also support legacy systems in Analog-Assisted
Digital Mode.

Key benefits– Digital configuration– Analog- assisted mode
– Multiple SOA configuration profiles in NVM– Input transient and MOSFET SOA protection, Fast shut down of <1 µs– Small package– Reduces external components; reduction in system BOM– Support legacy systems; external MOSFET selection using resistor strapping– Reduces design time and time-to-market– Enables the use of wider selection of FETs; improved system BOM cost
– Improved density

Intelligent powerswitches and modules

Key features

IGBT discretes andsilicon power diodes

Features and benefits

DriverPowermanagement ICs
WBG semiconductors

Hot swap controller

Vin/Vour
GPIO, EN, lload

Connectivity
PMBUS/I2C

Sensing

USB-C controllers
and peripherals

Vout

Product portfolio
Functional block
Hot-swap stage
DC-DC stage

Product Family

Product MOSFET technology and voltage class

Positive rail hot-swap controller

XDP710-002

Negative rail hot-swap controller

XDP700-002

XDP™ Digital PWM controller

XDPP1100-Q024

OptiMOS ™ 100 V
Linear FET 100 V
OptiMOS ™ 200 V 150 V 100 V 80 V 60 V 40 V 25 V

XDPP1100-Q040
XDP™ Digital PWM/LLC controller

Sensors

Vin (+/– 48 V=
Backplane

Microcontrollers

Application diagram

XDPP1140-100B
XDPP1148-100B
2EDL8 family

Support

EiceDRIVER™ Gate driver

2EDi family
2EDN family
1EDN family
ISOFACE ™ Digital isolator

2DIB family
4DIR family

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Solutions

XDP710-002
hot swap for datacenter

To loadIntelligent powerswitches and modules

VOUT

SOURCEGATE

ISNS_NISNS_P

optional

VDD_VIN

TSNS_P
TSNS_NUV/EN

EN Signal

FB

XDP710-002

IST
MODE0

VREG

MODE1

VBUS

ADDR1

SDAI

SDAO

SCL

GPO1

GPO0

WARN

FAULT

USB-C controllers
and peripherals

GND

PWRGD

ADDR0

VBUS

Microcontrollers

OV
VREG

500-950 V MOSFETs
IGBT discretes andsilicon power diodes

Application diagram

Gate-driver ICs

The XDP™ XDP710-002 is the next generation IC of XDP710-001 industry’s first wide input voltage hot swap and systemmonitoring Controller IC with digital SOA control with improvements and enhancement to meet the high-availability
and protection requirements of AI Servers while maintaining backward compatibility. A detailed list of featureenhancements and improvements is provided in its datasheet. XDP710-002 drives single or multiple parallel N-Channel
MOSFETs. In addition to a controlled turn ON, continuous system health monitoring such as OCP, OVP, UVLO, andcommunication to the main MCU via PMBus interface. The high-speed communication through PMBus allows
system designers to disable the downstream sub-systems fully or partially. XDP710-002 incorporates a wide variety
of system protections for safety operation and generates various protection responses depending on the severity of
the incidents. Latch off, reset, system shutdown, and retry are some examples of response types. Its SOA protection
effectively ensures that the system FET always operates under safe conditions. Additional features of XDP710-002 arefast shut-down in catastrophic failures and onboard non-volatile memory, making multi-level system configuration
possible.

Digital isolators

5.5 – 80 V input range with a programmable digital SOA Control

15-300 V MOSFETs

Applications

XDP710-002 hot swap for datacenter

VBUS

Power
management ICs

optional

Key features

Key benefits– Integrated gate driver: 0 to 250 µA– Dedicated high-precision 12-bit current and voltage ADCs:– Programmable two-step gate shutdown: ~1.5 A (typ.)– Non-volatile OTP memory– Telemetry with I2C, PMBus Interface: 1 MHz– Programmable and pre-set FET active SOA protection– Drives single or multiple parallel N-channel MOSFETs ; Scalable designs– Active monitoring: V ≤ 0.4%, I ≤ 0.75%, P ≤ 1.15%, E ≤ 5%
– Fast shutdown of <1 µAs in catastrophic events– Multi-configuration allows multi-platform design– Dynamic configuration of fault and warnings, remote load and power monito-

WBG semiconductors

Features and benefits

ring and diagnostics

Sensors– Pre-configured SOA profiles of Infineon’s OptiMOS™ and OptiMOS™ Linear FET

Supportfamilies reduce design time

XDP710-002 Evaluation Board IPT015N10N5
Server and datacenter‒ 24 -48 V industrial systems‒ Power distribution systems‒ Power distribution systems‒ Intelligent e-fuse‒ Network router and switches

Click here to learn more:
www.infineon.com/xdp-smps
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Solutions

XDP710-002
hot swap for datacenter

Applications

XDP700-002 hot swap for telecom

15-300 V MOSFETs

Industry’s first -6.5 to -80 V input range with a programmable digital SOA

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

The XDP™ XDP700-002 is a new member of the XDP™ XDP7x0 family and is the industry’s first wide voltage range hotswap controller with a programmable digital SOA control ideal for -48 V pre-isolated DC-DC telecom infrastructure,
network routers, switches, or applications requiring -24 V/-48 V input voltage support. XDP700-002 drives single ormultiple parallel N-Channel MOSFETs. In addition to a controlled turn ON, XDP700 provides continuous system healthmonitoring such as OCP, OVP, UVLO, and communication to the main MCU via the PMBus interface. The high-speed
communication through PMBus allows system designers to disable the downstream sub-systems fully or partially.
XDP700-002 incorporates an extensive variety of system protections for safety operation and generates various
protection responses depending on the severity of the incident. Latch off, reset, system shutdown, and retry are someexamples of response types. Its SOA protection effectively ensures that the system FET always operates under safe
conditions. Additional features of XDP700-002 are fast shutdown in catastrophic failures and onboard non-volatilememory, making multi-level system configuration possible.

Application diagram

IGBT discretes andsilicon power diodes

To load
RTNIntelligent powerswitches and modules

VOUT

GATE

ISNS_NISNS_PVDD_RTNSRTN

TSNS_PVDD_RTNTSNS_N

UV/EN
OV

MODE0

ADDR1
USB-C controllers
and peripherals

SCL
VBUS

Power
management ICs

VBUS

SDAI

ADDR0

FAULT
SDAO

PWRGD
GPO1

GND

GPO0

VREG

Microcontrollers

MODE1

VREG

WARN

VBUS

IST

XDP700-002

Key features

Key benefits– Integrated gate driver: 0 to 250 µA– Dedicated high-precision 12-bit current and voltage ADCs:– Programmable two-step gate shutdown: ~1.5 A (typ.)– Non-volatile OTP memory– Telemetry with I2C, PMBus Interface: 1 MHz– Programmable and pre-set FET active SOA protection– Drives single or multiple parallel N-channel MOSFETs ; Scalable designs– Active monitoring: V ≤ 0.4%, I ≤ 0.75%, P ≤ 1.15%, E ≤ 5%
– Fast shutdown of <1 µAs in catastrophic events– Multi-configuration allows multi-platform design– Dynamic configuration of fault and warnings, remote load and power monito-

WBG semiconductors

Features and benefits

ring and diagnostics

Sensors– Pre-configured SOA profiles of Infineon’s OptiMOS™ and OptiMOS™ Linear FET

Supportfamilies reduce design time

XDP700-002 Evaluation Board IPB017N10N5‒ 48 V pre-isolated DC-DC telecom infrastructure‒ -24 V/-48 V industrial systems‒ Power distribution systems‒ Intelligent e-fuse‒ Network router and switches

Click here to learn more:
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Applications

Solutions

Hot swap controller portfolio+5.5 to +80 V-6.5 to -80 V

12-bit12-bitProgrammable FET active SOA protection✓✓

Charge pump✓-Configurable shutdown: Two steps turn-off or
1.5 A pull-down current✓✓

Input voltage range
Current and voltage ADCs

PMBus interface

1 MHz

1 MHz

Analog comparator

OV,FB,UV/EN

OV,UV/EN

≤0.4%

≤0.5%

FET's current monitoring and reporting≤ 0.75% at full ADC range≤ 1.3% at full ADC range

Input power monitoring and reporting:≤ 1.15%≤ 1.8%

Energy monitoring and reporting✓✓

Programmable input and output OV and UV protections✓✓

Support for external temperature sensor and OT protection✓✓

Precision input and output voltage monitoring andreportingSequential turn-on capability
Package✓29-lead (6 mm x 6 mm)-40°C to 125°C-40°C to 125°C

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Junction temperature✓
29-lead (6 mm x 6 mm)

500-950 V MOSFETs

XDP700-002

Gate-driver ICs

XDP710-002

Digital isolators

Functional block

15-300 V MOSFETs

Hot swap controller

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397

Integrated POL voltage regulators
Highest density high efficiency integrated POL (IPOL) for smart enterprise systems

500-950 V MOSFETs

Infineon’s integrated POL switching converters deliver benchmark efficiency and dramatically reduce system size.
Solutions up to 40 A are available in compact PQFN packages. Target applications include servers, AI, storage, routers andswitches, telecom base stations, digital home media, mobile computing, and embedded data processing. PMBus digitalcommunication is available in a single output format.

Point-of-load products – how to choose

PMBus digital IPOL

Constant on-time IPOL

IPOL with digital interface

Easy/light-load efficiency

Digital isolators

Gate-driver ICs

DC-DC products
1 to 35 A

Intelligent powerswitches and modules– TDA387xx: 40 A/25 A PMBus– IR3806x: 6-35 A with PMBus– IR3816x: 15 A, 30 A with PMBus and Intel SVID
– IRPS5401M: PMBus I2C

IGBT discretes andsilicon power diodes– IR3883MTRPBF, IR3823AMTRPBF (3 A)– IR3888BMTRPBF (16 A)– IR3888AMTRPBF (20 A)– IR3888MTRPBF, IR3447AMTRPBF (25 A),– IR3889MTRPBF, IR3887MTRPBF (30 A)– IR3846AMTRPBF (40 A)– TDA38825/6 (20 A)– TDA38827 (25 A)– TDA38812/3 (12 A)– TDA38540 (40 A, stackable)– Telemetry– Margining– Intel SVID support

4.3 V < Vin < 14 V

Vin
Differential remote sense for
optimum output accuracy
VIN

PVIN

Boot

En/FCCM

Vin

PVin

Boot

Vcc

SW
RS+
RS–

VO
Microcontrollers

PGOOD

SCL
SDA
SAlertPower
good

15-300 V MOSFETs

Applications

SolutionsSwitching regulators

SW

IR3883MTRPBF

PGood
PGood

PGND
(optional)
Vo
Fb
PGnd

OCset

USB-C controllers
and peripherals

Gnd

Digital mode: I2C/PMBus interface
4.3 V < Vin < 17 V

PMBus IC capabilities

EnableDevice ID

Configuration

On/off configuration
fault/warnings

ControlSequencing delay/ramp
fault response

Vin

PVin

Boot

VCC/LDO

Phase
Vo

Power
management ICs

Inventory

EnableSW

IR3887MTRPBF*

PGood
PGood

GATEL

SS/Latch

Fb

Ton/ModeVout, Iout, powertemperature, peak values

StatusComms, data, temps

VSENM

ILIM
AGnd

PGnd

WBG semiconductors

Telemetry

Sensors

Ready-to-go reference designs and the online PowerDesk simulator simplify the task of designing regulated voltage rails.
Different control topologies are available to meet an application’s specific requirements.

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Applications

SolutionsSwitching regulators

Digital IPOL voltage regulators

15-300 V MOSFETs

For the next generation of computing applications

500-950 V MOSFETs

The digital interface IPOL devices are easy-to-use, fully integrated, and highly efficient DC-DC regulators offering I2C/
PMBus, Intel SVID. The on-board PWM controller and MOSFETs make the family a space-efficient solution, providing
accurate power delivery for low output voltage and high current applications.

Gate-driver ICs

The latest generation of digital POL regulators, TDA3864X/TDA387XX, use best in class OptiMOS™ FETs with integrated
bootstrap diode providing high-efficiency power delivery. Furthermore, it uses a fast Constant On-Time (COT) control
scheme, simplifying design efforts and achieving fast transient response.

Digital isolators

TDA3864X/TDA387XX support wide input and output voltage ranges, offering programmable switching frequency from400 kHz to 2 MHz programmable DC loadline, feature provides an additional tool to manage the transient response.

– OptiMOS™ MOSFET– PMBUS 1.3 compliance– Proprietary Fast COT Architecture– Digitally programmable loadline– Comprehensive protection features– Operation temp: -40° to 125° C– Best-in-class efficiency and thermals– Stable and reliable design– Comprehensive telemetry features– Voltage setting and margining– Improved transient response– No external compensation minimizes passives

Intelligent powerswitches and modules

Key benefits

Microcontrollers

Key features

IGBT discretes andsilicon power diodes

Features and benefits

Digital interface IPOL
Max. fsw[kHz]

Distinctive features

6

5x6

16

1500

IR38062M

15

5x7

21

1500

PMBus

IR38063M

25

5x7

21

1500

IR38064MTRPBF

35

5x7

21

1500

IR38163M

30

5x7

16

1500

OptiMOS™ 5, SVID + PMBus

IR38164M

30

5x7

16

1500

OptiMOS™ 5, SVID + PMBus, enhanced Imon

IR38165M

30

5x7

16

1500

OptiMOS™ 5, SVID

IR38263M

30

5x7

16

1500

OptiMOS™ 5, PVID + PMBus

IR38265M

30

5x7

16

1500

OptiMOS™ 5, PVID

IR38363M

15

5x7

16

1500

OptiMOS™ 5, SVID + PMBus

IR38365M

15

5x7

16

1500

OptiMOS™ 5, SVID

IRPS5401M

4+4+2+2+0.5

7x7

14

1500

5 output PMIC, PMBus

TDA38640/A-0000

40

5x6

5

2000

OptiMOS™ 5, SVID

TDA38725-0000

25

5x6

4,5

2000

OptiMOS™ 5 + PMBus

TDA38740-0000

40

5x6

4,5

2000

OptiMOS™ 5 + PMBus

Sensors

IR38060M

USB-C controllers
and peripherals

Max. Vin[V]

Power
management ICs

Package size[mm]

WBG semiconductors

Max. current[A]Part number

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3 – 40 A-rated, easy-to-use with no external compensation and smallest BOM
A broad portfolio of Analog voltage regulator products supports a wide range of computing application requirements.
Featuring a proprietary FAST COT architecture, these regulators enable ease of use and provide excellent transient
response while minimizing passive count, creating a very compact and cost-effective solution. The devices increase
efficiency and power density and simplify design for POL applications in servers, AI, enterprise storage, netcom routersand switches, datacom, and telecom base stations.

VIN

VIN

BST

CBST

CVin

L1
VOUT

SW
Vin

En/FCCM

PVin

EN

EN
Boot

PGOOD

PGOOD

Vcc

CFF

VCC
SW

TDA38825/26

FB
RFB1

CVCC

IR3883MTRPBF

PGood

RFB2

PGood

MODE

PGND
(optional)

CS
RCS

Fb

CVOUT

RGND
CSS1

RMODE

Vo

Digital isolators

4.3 V < Vin < 14 V

Gate-driver ICs

Block diagram IR3887M (30 A)

Block diagram IR3883M

500-950 V MOSFETs

Analog IPOL voltage regulators with fast COT

15-300 V MOSFETs

Applications

SolutionsSwitching regulators

SS/VREF
PGND

AGND
CSS2

PGnd

OCset

IGBT discretes andsilicon power diodes

Gnd

Key benefits– Fast COT control engine– No external compensation– Feature rich: programmable Fsw, supports FCCM/DEM modes– Comprehensive protection features– Industry common footprints available– Ease of use, improved transient response, optimized BOM, cost effective– Small solution size
– Stable with all ceramic caps, flexible design and easy tuning– Enabling stable design and long term reliability

Microcontrollers

Key features

Intelligent powerswitches and modules

Features and benefits

Analog interface IPOL
Max. fsw[kHz]

Distinctive features

IR3447AMTRPBF

25

5x6

17

600

Costant-on-time (COT)IR3823AMTRPBF

3

3.5 x 3.5

17

2000

Costant-on-time (COT)IR3846AMTRPBF

40

5x7

17

600

Costant-on-time (COT)IR3883MTRPBF

3

3x3

14

800

Costant-on-time (COT)IR3887MTRPBF

30

4x5

17

2000

Costant-on-time (COT)IR3888MTRPBF

25

5x6

17

2000

Costant-on-time (COT)IR3889MTRPBF

30

5x6

17

2000

Costant-on-time (COT)IR3899AMTRPBF

9

4x5

17

2000

Costant-on-time (COT)TDA38812

12

3x4

16

1000

TDA38813

12

3x4

16

1000

TDA38820

20

4x5

17

2000

TDA38825

20

3x4

16

1000

TDA38826

20

3x4

16

1000

TDA38827

25

5x6

17

2000

TDA38840

40

5x6

17

2000

USB-C controllers
and peripherals

Max. Vin[V]

Power
management ICs

Package size[mm]

Costant-on-time (COT)WBG semiconductors

Max. current[A]Part number

Sensors

Costant-on-time (COT)

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400Solutions

Digital multiphase controller

Feature Controller family
Dual rail

Dual rail

Dual rail

Dual rail

Dual rail

Dual rail

Dual rail

Dual rail

Part number

PMBus

XDPE15284D

XDPE152C4D

XDPE19283B

XDPE192C3B

XDPE19284C

XDPE192C4C

XDPE1A2G5B

XDPE132G5C

Phase
configuration

Main

8 ph

12 ph

8 ph

12 ph

8 ph

12 ph

16 ph

16 ph

N+M=8

N+M=12

N+M=8

N+M=12

N+M=16

8+8

3.3 V

3.3 V

3.3 V

3.3 V

3.3 V

3.3 V

3.3 V

3.3 V

Switching frequency

Up to 3 MHz

Up to 3 MHz

Up to 3 MHz

Up to 3 MHz

Up to 3 MHz

Up to 3 MHz

Up to 3 MHz

Up to 2 MHz

Operating temperature range- 40°C to 85°C

- 40°C to 85°C

- 40°C to 85°C

- 40°C to 85°C

- 40°C to 85°C

- 40°C to 85°C

- 40°C to 85°C

- 40°C to 120°C

VQFN package

40-lead(5x5)
0.4 mm pitch

48-lead(6x6)
0.4 mm pitch

40-lead(5x5)
0.4 mm pitch

48-lead(6x6)
0.4 mm pitch

40-lead(5x5)
0.4 mm pitch

48-lead(6x6)
0.4 mm pitch

56-lead(7x7)
0.4 mm pitch

56-lead(7x7)
0.4 mm pitch

Typical application

Intel server,
workstation,
high-end
desktop

Intel server,
workstation,
high-end
desktop

AMD server,
workstation,
high-end desktop

AMD server,
workstation,
high-end desktopIntel server,
workstation,
high-end
desktop

Intel server,
workstation,
high-end
desktop

GPU, ASIC, net- AMD server,
working
GPU, ASIC, networking

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Advantages of a digital controller
The protection features include a set of sophisticated overvoltage, undervoltage, overtemperature, and overcurrent
protection. Each controller in the table above also detects and protects against an open circuit on the remote sensing
inputs. These attributes provide a complete and advanced protection feature for microprocessor, DSP, FPGA, or ASIC
power systems. Accurate current sense telemetry is achieved through internal calibration that measures and corrects
current sense offset error sources upon start-up.

IGBT discretes andsilicon power diodes

Subconfigurations N+M=8Intelligent powerswitches and modules

N+M=12

Vout_max

Digital isolators

Configurable output rails

500-950 V MOSFETs

Infineon’s digital multiphase and multi-rail controllers provide power for today’s medium- and high-current POL
applications in telecom, datacom, server, and storage environments. The digital controller family enables OEMs andODMs to improve efficiency and total cost of ownership while increasing power density and optimizing the total systemfootprint of the voltage regulator. The products highlighted in the table below represent our seventh-generation digital
controller family and support up to two rails with 1-16 phases on individual rails. The I2C/PMBus interface connects
the digital controllers to the application system and provides real-time telemetry information, monitoring, and control
capabilities. The digital controllers are fully configurable through our graphical user interfaces, enabling ease of use
and simplified design optimization.

Gate-driver ICs

Point-of-load power management

15-300 V MOSFETs

Applications

DC-DC digital multiphase controllers

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401Solutions

Integrated power stages

Features

Iout [A]70

Vin [V]
4.5 to 15

Vout [V]0.25 to 5.5Intelligent powerswitches and modules
Microcontrollers
USB-C controllers
and peripherals

Switching frequency [MHz]1.0

TDA21490

5x6 x 0.9 mm PQFN

90

4.5 to 15

0.25 to 5.5

1.0

TDA21570

5x6 x 0.9 mm PQFN

70

4.5 to 15

0.25 to 5.5

1.2

TDA21590

5x6 x 0.9 mm PQFN

90

4.5 to 15

0.25 to 5.5

1.2

TDA21435

4x5 x 0.9 mm PQFN

35

4.5 to 15

0.25 to 5.5

1.2

4x5 x 0.9 mm PQFN

50

4.5 to 15

0.25 to 5.5

1.5

4x6 x 0.47 mm Chip Embedded

90

4.5 to 15

0.25 to 5.5

1.5

Sensors

TDA21550
TDA22590

Powermanagement ICs

Package
5x6 x 0.9 mm PQFNWBG semiconductors

Part type

IGBT discretes andsilicon power diodes‒ Integrated driver, Schottky diode, control MOSFET, and synchronous MOSFET‒ 5 mV/A or 5 µA/A on-chip MOSFET current sensing with temperature-compensated reporting‒ Input voltage (Vin) range of 4.5 to 15 V VCC and VDR V supply of 4.5 to 7 V‒ Output voltage range from 0.25 up to 5.5 V‒ Output current capability of 90 A
‒ Operation up to 2.0 MHz‒ VCC under-voltage lockout (UVLO)‒ 8 mV/°C temperature analog output and thermal flag pull-up to 3.3 V‒ Overtemperature protection (OTP)‒ Cycle-by-cycle self-preservation overcurrent protection (OCP)‒ MOSFET phase fault detection and flag
‒ Preliminary overvoltage protection (pre-OVP)‒ Compatible with 3.3 V tri-state PWM input‒ Body-braking load transient support through PWM tri-state‒ Diode emulation mode (DEM) for improved light-load efficiency‒ Thermally enhanced packages

TDA21470

500-950 V MOSFETs
Digital isolators

Infineon’s integrated OptiMOS™ power stage family contains a synchronous buck gate driver IC co-packed with control
and synchronous MOSFETs and a Schottky diode to improve efficiency further. When layout guidelines are followed,
the packages are optimized for PCB layout, heat transfer, driver/MOSFET control timing, and minimal switch node
ringing. The paired gate driver and MOSFET combination enables higher efficiency at lower output voltages required by
cutting-edge CPU, GPU, ASIC, and DDR memory designs. The integrated power stage’s internal MOSFET current sense
algorithm, with integrated temperature compensation, achieves superior current sense accuracy versus best-in-classcontroller-based inductor DCR sense methods. Switching frequency up to 1.5 MHz enables high-performance transient
response and allows the miniaturization of output inductors as well as input and output capacitors, while maintaining
industry-leading efficiency. The integrated power stage family is optimized for GPU and CPU core power delivery in AI,
server, cloud, and data center applications. The ability to meet the stringent requirements of the server market also
makes them ideally suited for powering GPU, ASIC, DDR memory, and other high-current designs.

Gate-driver ICs

High current integrated power stages with current and temperature telemetry

15-300 V MOSFETs

Applications

OptiMOS™ power stages

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Solutions

DC-DC conversion

Applications

Typical multiphase application circuit
L
SW

TOUT
PWM
VIN

VOS

TDA22590

PHASE

VDRV

VDRV
(+5V)

BOOST

15-300 V MOSFETs

Rs

VIN(+12V)CBOOT

VCC EN IOUT REFIN LGND PGND

L

+3.3V

PWM
PSYSP_VSYS

VIN

PSYSN_VINSEN

VDRV

500-950 V MOSFETs

VD12

+1.2V

SW

TOUT

XDPE19284

VOS

TDA22590

BOOST
PHASE

VDD

CBOOT

VCC EN IOUT REFIN LGND PGND

TSEN1

AVRRDYPWM1

BVRRDYISEN1

Gate-driver ICs

100pF
AVREN

L
SW

TOUT
PWM

BVREN_IMON

VIN

VOS

TDA22590

LOAD1

BOOST

PWM2
PHASE

VDRV
ISEN2

VRHOT#FAULT1CBOOT

VCC EN IOUT REFIN LGND PGND

Digital isolators

PINALRT#

PWM3
ISEN3
SW

TOUT

SDA

PWM4

PWM

ISEN4

VIN

SCL

VOS

TDA22590

PHASE

VDRV

SMBALERT#

PWM5

BOOST

IGBT discretes andsilicon power diodes

PMBus Interface

L

CBOOT

VCC EN IOUT REFIN LGND PGND

ISEN5

PWM6

SVID Interface

L
SW

TOUT
PWM
VCLK
10Ω
VALRT#

VIN

Intelligent powerswitches and modules

ISEN6

VDIO

VOS

TDA22590

BOOST

AVSEN
220pF

PHASE

VDRV

AVREF

CBOOT

VCC EN IOUT REFIN LGND PGND
XADDR

SW

TOUT

L

Microcontrollers

100pF
TSEN2_ISYS_VAUX

PWM
PWM7
VIN

VOS

TDA22590

BOOST

ISEN7
PHASE

VDRV

CBOOT

VCC EN IOUT REFIN LGND PGND

PWM8USB-C controllers
and peripherals

ISEN8
10Ω
BVSEN
220pF
BVREF

L
SW

TOUT
PWM

VOS

TDA22590

BOOST
PHASE

VDRV

Power
management ICs

VIN

CBOOT

VCC EN IOUT REFIN LGND PGND

L

VDRV

WBG semiconductors

PWM
VIN

LOAD2

SW

TOUT

VOS

TDA22590

BOOST
PHASE

CBOOT

Sensors

VCC EN IOUT REFIN LGND PGND

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Solutions

Power modules

Applications

Dual-phase power modules

15-300 V MOSFETs

120-A OptiMOS™ TDM22544D and TDM22545D

500-950 V MOSFETs

Artificial intelligence is driving an exponential increase in global data generation and consequently increasing theenergy demand of the chips that support this enormous data growth, now approaching a thermal design powerof >1000 W. As AI servers require three times more energy than traditional servers, and as data centers are alreadyconsuming more than two percent of the global energy supply, it is essential to find innovative power solutions andarchitecture designs that can lead to a measurable impact on global energy savings, as well as better total cost ofownership for data centers.

Gate-driver ICs

To meet this demand, TDM2254xD dual-phase power modules offer a best-in-class power density and efficiency,
contributing to a substantial decrease in the total cost of ownership of data centers and, hence, a greener AI.
Block diagram

Digital isolators

Dual Phase 120 A Power Stage Module

+12V

+3.3V

1µF

VRTN2
VCC

ISEN1

EN1

PWM2

PWM
controller

1 kΩ

VINSEN1

EN2

Co1

Co

VOUT2

VCC

GND

2x1µF

TSEN1
100 pF

SM_DAT
I2C BusCo

TDM22544D

PWM2
IMON2

ISEN2

0Ω
10nF

Co1

TMON2

VRDY2

1kΩ

Load

PWM1
IMON1

VRDY1

VIN

VIN
VOUT1

PWM1
1 kΩ

1µF

TMON1

VSEN1

Intelligent powerswitches and modules

220 pFIGBT discretes andsilicon power diodes

Cin

+5V

SM_CLK
SM_ALERT#SV_DAT
SV_CLK
SV_ALERT#TSEN2VRHOT_ICRIT#

VD12

100 pF

Microcontrollers

CPU SerialBus
VCC IO

VR_EN1
VR_EN2

From thesystemUSB-C controllers
and peripherals

PWR_IN_ALERT#
PROG
845Ω 10nF

VSEN2
220 pF

VRTN2

Power
management ICs

GND

Key benefits– 10x9x8 mm + 10x9x5 mm for 160 A peak
– +2% higher efficiency than competition at full load
– -5°C cooler than competition at full load
– Minimized PDN losses– 70 A per phase thermally managed– High power density solution (>1A/mm2)– Best-in-class efficiency and TCO– Optimal thermal management– Enabling vertical power delivery– Improved signal integrity

Sensors

Key features

WBG semiconductors

Features and benefits

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404

Solutions

Audio amplifier ICs

Applications

Integrated class D audio amplifier ICs

15-300 V MOSFETs

Cooler, smaller, and lighter class D audio amplifiers for great sounding products

Gate-driver ICs

500-950 V MOSFETs

Infineon’s MERUS™ audio solutions enable audio designers to improve the performance of their products while
increasing efficiency and reducing solution size. In combination with new innovative architectures, advances insemiconductor processes are behind a portfolio of class D technologies that allow professional, commercial/home,and portable audio applications to benefit from unparalleled performance, power density, and reliability. The broad
portfolio covers power ranges from 100 W to 2 kW per channel, from the multi-chip modules (MCMs) to highly scalable
discrete audio amplifier solutions consisting of powerful MOSFET/CoolGaN™ HEMT and driver ICs combinations.

No heatsink
ICs + MOSFETs/e-mode GaN

IRS20957SPBF (1 ch) + MOSFETs

with gate buffer

IRS209x (1 ch) + CoolGaN™ GIT HEMT 600 V
with gate buffer

Digital isolators

IRS2092SPBF (1 ch) + MOSFETs
IRS2052M (2 ch) + MOSFETs

IGBT discretes andsilicon power diodes

IR43x1 (1 ch)
IR43x2 (2 ch)

Lowest idle power

1000

Output power [W/Channel]
Highest power w/o heatsink

Scalable in output power

2000

Best audio performancePower
management ICs

By combining our core principles, competencies, and leadership in groundbreaking power semiconductors withrevolutionary audio amplifier technologies, such as MERUS™, we provide smaller, lighter, more robust, and flexible
solutions that run with less heat dissipation. In addition to outstanding quality and reliability, Infineon’s amplifier solutions
are designed to maximize power efficiency and dynamic range while providing best-in-class performance in product form
factors that make them an optimal fit for any high-end application.

Designfreedom

Fasttime to market

Sensors

Maximized
output power

WBG semiconductors

Design with Infineon’s solutions to benefit from:

Maximized
power efficiency

Microcontrollers

100Intelligent powerswitches and modules

MA53x2M (2 ch)

USB-C controllers
and peripherals

Multi-chip module ICs

IRS2093MPBF (4 ch) + MOSFETs

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Applications

Solutions

Audio amplifier ICs

High power efficiency and density in small packages

Gate-driver ICs

With its revolutionary MERUS™ integrated multilevel class D audio amplifier ICs, Infineon is leading in efficiency and power
density. Compared to traditional class D amplifier ICs, which produce only two voltage output levels, multilevel amplifier ICs
use additional on-chip MOSFETs and capacitors to produce outputs with a higher signal granularity, i.e., higher switchingfrequencies and multiple output signal levels – typically up to five voltage levels.

500-950 V MOSFETs

15-300 V MOSFETs

Integrated MERUS™ multilevel amplifier ICs
for class D audio solutions

Filterless topology with “flying capacitor” of an integrated class D IC
Multilevel amplifiers

Digital isolators

PVDO

IGBT discretes andsilicon power diodes

PWM
modulator

Intelligent powerswitches and modules

Protection

Key benefits– Multilevel switching technology– Scalable signal “granularity”– Proprietary circuits architecture– Highest efficiency and power density– Potential LC filter removal– Low THD+N– Cooler operation– Low power loss
– Virtually no switching loss measurable in idle mode

USB-C controllers
and peripherals

Key features

Microcontrollers

Features and benefitsPowermanagement ICs

Efficiency where it matters for audio reproduction

Sensors

WBG semiconductors

For MERUS™ integrated multilevel audio amplifier ICs,
amplifier efficiency at average output power is key. The
graph on the left shows that the MERUS™ multilevel amplifier is much more effective than the traditional class D
amplifier, translating into less power consumption in AC
input and battery-powered audio applications.

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Applications

Solutions

Audio amplifier ICs

15-300 V MOSFETs

MERUS™ integrated audio amplifier
multi-chip modules (MCM)
Integrated components for scalable output power and superb audio performance

500-950 V MOSFETs

Multi-chip modules integrate PWM controller and power MOSFETs in a single package to offer a highly efficient, compact
solution that reduces component count, shrinks PCB size up to 70 percent, and simplifies class D amplifier design.

Gate-driver ICs

Multi-chip audio amplifier module

Digital isolators

Multi-chip audio amplifier module

Analog input class D driver family

Power
MOSFETsIGBT discretes andsilicon power diodes

PWM input class D driver family

LPF
PWM
modulator

Intelligent powerswitches and modules

Gate driver

Microcontrollers

Protection– Single package with integrated PWM controller and audio-performance-– Extended battery playback time
– Unrivaled audio performance– Smaller solution size (BOM reduction, system level cost savings)– Eliminated need for heatsink– High noise immunity– Reliable operation– Thermal efficiency

optimized power MOSFET

Sensors– Overcurrent protection– Thermal shutdown– Floating differential input– Clip detection– Best-in-class power efficiency and audio performance– Lower component count, leading to design simplification– Compatible with single supply or split rail configuration– Click noise reduction

Powermanagement ICs

Key benefits

WBG semiconductors

Key features

USB-C controllers
and peripherals

Features and benefits

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Applications

Solutions

Audio amplifier ICs

Infineon’s discrete audio solutions are scalable to various output power levels by replacing the driver-transistor
combinations’ external MOSFETs or CoolGaN™ HEMTs. Key parameters for the transistors used in discrete class D audio
applications include on-state resistance (RDS(on)), gate charge (QG), and reverse recovery charge (Qrr). Our products are
specifically suitable for class D audio applications and optimized for these parameters to achieve maximized efficiency,
THD, and EMI amplifier performance. The CoolGaN™ HEMT portfolio is specifically built for class D audio requirements,
with high-performing SMD packages to fully utilize the benefits of gallium nitride.

PWM
modulator

IGBT discretes andsilicon power diodes

Digital isolators

Audio solution overview

Gate-driver ICs

Scalable output power with a unified design platform

500-950 V MOSFETs

15-300 V MOSFETs

Discrete MERUS™ audio amplifier driver ICs with
MOSFET and gallium nitride CoolGaN™ HEMTIntelligent powerswitches and modules

Gate driver

Protection
PWM input class D driver family

Digital audio
MOSFET

Microcontrollers

Analog input class D driver family

Integrated PowIRAudio class D driver family

StrongIRFET™
OptiMOS™, CoolMOS™
40~600 V

USB-C controllers
and peripherals

MERUS™
Audio IC, MCM,
Multilevel IC

Powermanagement ICs

Switch mode power supplies – Energy efficiency on its next level!
Dedicated class D SMPS from 100~500 W

Features and benefits
Key benefits

Key advantages

alteration in output power level– Superior audio performance– Increased reliability– Unique audio experience

WBG semiconductors– Unified design platform– Scalable output power up to over 2 kW per channel– Simple yet effective - exchange of external MOSFET triggers

Sensors– Best-in-class power efficiency

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Applications

Solutions

Audio amplifier ICs

15-300 V MOSFETs

Integrated class D audio amplifier IC portfolio

IR4302M

MA5302MS*

MA5332MS

2

2

2

2

MA5342MS*
2

Max. power per channel

90W

160W

100W

130W

200W

200W

200W

~ ± 25 V or 50 V

~ ± 31 V or 62 V

~ ± 25 V or 50 V

~ ± 31 V or 62 V~±32 V or 64 V~±40 V or 80 V~±60 V or 120 V

Max. PWM frequency

500 kHz500 kHz500 kHz500 kHz500 kHz500 kHz500 kHz

Differential audio input

✓

✓

✓

✓

✓

✓

✓

Overcurrent protection

✓

✓

✓

✓

✓

✓

✓

Integrated power MOSFET

✓

✓

✓

✓

✓

✓

✓

Abs. max voltage

60V

80V

60V

80V

80V

100V

150V

PWM controller

✓

✓

✓

✓

✓

✓

✓

Thermal shutdown

✓

✓

✓

✓

✓

✓

✓

Click noise reduction

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

7 x 7 mm QFN

7 x 7 mm QFN

Supply voltage

Clip detection
Package typeEvaluation boards

5x6 mm QFN

5x6 mm QFN

7 x 7 mm QFN

7 x 7 mm QFN

7 x 7 mm QFNIRAUDAMP21

IRAUDAMP12IRAUDAMP19

IRAUDAMP22

IRAUDAMP16IRAUDAMP17

EVAL_MA5302MS_200Wx2
REF_MA5302BTLSPS_400W

500-950 V MOSFETs

IR4322M

1

Gate-driver ICs

IR4301M

1Digital isolators

IR4321M
Number of audio channels

EVAL_AUDAMP25 EVAL_MA5342MS_200Wx2
REF_MA5332BTLSPSIRS2093MPBF

IRS2452AM

2

4

2

1

Max. power per channel

500W

500W

300W

300W

500W

500W

± 100 V± 100 V± 100 V± 100 V

± 200 V

± 200 V

Gate sink/source current

1.2/1.0 A

1.2/1.0 A

0.6/0.5 A

0.6/0.5 A

0.6/0.5 A

0.6/0.5 A

Overcurrent protection

✓

✓

✓

✓

✓

✓

PWM input✓✓

Floating input

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

PWM controller✓

Click noise reduction✓

Temperature sensor input✓

Thermal shutdonw✓✓

Clock input
Package type✓16-pin SOIC narrow

16-pin SOIC narrow

MLPQ48MLPQ48MLPQ3220-lead SOIC wide

IRAUDAMP4A
IRAUDAMP6IRAUDAMP5IRAUDAMP7SIRAUDAMP9IRAUDAMP10

tbd

IRAUDAMP23

REF_IRS2461S_5KW

Sensors

Evluation boardsPowermanagement ICs✓

Clip detection

WBG semiconductors

Protection control logic

Features

IRS2461S

Supply voltage

Dead timeIntelligent powerswitches and modules

IRS2052M

1

Microcontrollers

IRS2092SPBF

1

USB-C controllers
and peripherals

IRS20957SPBF
Number of audio channels

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SupportSpecifications

MERUS™ discrete audio amplifier driver IC product portfolio

IGBT discretes andsilicon power diodes

Features

Specifications

MERUS™ integrated audio amplifier multi-chip modules (MCMs)

409

Applications

Solutions

Audio amplifier ICs

Recommended MOSFET (through-hole) product portfolio
Recommended discrete
audio driver IC

2Ω

4Ω

8Ω

150 W

IRS2093MPBFIRFB4019

IRFB4019

IRFI4020H-117P

IRS2052M

IRFB5615

IRFB4019

IRFI4020H-117P

300 W

IRS2092SPBFIRFB4228PBFIRFB4227

IRFB4229

500 W

IRS20957SPBFIRFB4229

IRFB4228PBFIRFB4227

750 W

IRFB4227

IRFB4229

1000 W

IRFP4668

IRFB4229 x 2

500-950 V MOSFETs

200 W

15-300 V MOSFETs

Speaker resistance

Output power

Gate-driver ICs

IRS2093MPBF works up to 150 W and IRS2052M works up to 300 W.
IRS2092SPBF and IRS20957SPBF work with all power levels listed above.

Speaker resistance

Recommended discrete
audio driver IC

2Ω

4Ω

8Ω

IRS2093MPBF

IRF6645

IRF6665

IRF6775M

200 W

IRS2052M

IRF6646

IRF6775M

IRF6775M

300 W

IRS2092SPBFIRF6644

IRF6775M

IRF6785

500 W

IRS20957SPBFIRF6643

IRF6641

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

150 W

IGBT discretes andsilicon power diodes

Output power

Digital isolators

Recommended MOSFET (DirectFET™) product portfolio

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Solutions

Audio amplifier ICs

Applications

Recommended audio evaluation boards

Summary of features

proprietary multilevel amplifier‒ Power input: 5 V/2.5 A - sourced
from the same single USB-C power
supply or battery pack‒ No need for external or extra
power supplies‒ Up to 40 W instantaneous peakoutput power with a USB-C power
supply or battery pack

‒ 1 x 60 W at 4 Ω speaker output‒ Powered by off-the-shelf regulated

Benefits‒ Compatible with Arduino
MKRZERO and MKR1000 WIFI
‒ Full hardware control andcustomization‒ Error monitoring through Arduino
programming framework

Benefits‒ Superior sound quality‒ Modelled after classic bass
amplifier topology‒ Genuine vacuum-tube preamplifier‒ Small size and scalable platform‒ Excellent efficiency

EVAL_AUDAMP25
Number of audio channels: 2
Output power per channel [RMS]:
200 W
Featured class D IC: MA5332MS
Input: analog
OPN: EVALAUDAMP25TOBO1

REF_MA5332BTLSPS
Number of audio channels: 1
Output power per channel [RMS]:
200 W
Featured class D IC: MA5332MS
Input: analog
OPN: REFMA5332BTLSPSTOBO1Intelligent powerswitches and modules

wall adapter‒ 12AU7 vacuum-tube preamplifier‒ Stereo 3.5 mm AUX input‒ XLR D.I. output with ground liftswitch‒ Bright switch for slap-bass sound‒ Low idle power consumption

Powermanagement ICs

Benefits‒ Compatibility with major
streaming applications for
Raspberry Pi (Volumio, JustBoom
Player, Max2Play)‒ Up to 48 kHz of sample rate and24-bit of music playback‒ Full hardware control,
customization, and error
monitoring trough Linux Alsamixer‒ Equipped with MERUS™ MA12070P

WBG semiconductors

Summary of features‒ Equipped with MERUS™ MA12070P
proprietary multilevel amplifier‒ Compatible with Raspberry Pi Zeroand Raspberry Pi Zero wireless‒ Power input: 5 V/2.5 A - sourced
from the same single supply as the
Raspberry Pi‒ No need for external or extra
power supplies‒ Up to 40 W instantaneous peakoutput power with the Raspberry
Pi official 5 V/2.5 A supply

SupportSensors

Potential Applications‒ DIY on the go wireless speakers‒ DIY intelligent home audio systems

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Digital isolators

Summary of features

IGBT discretes andsilicon power diodes

DEMO_BASSAMP_60W_MA12070
Reference design demoboard
MERUS™ MA12070 as musicalinstrument bass amplifier

Microcontrollers

KIT_ARDMKR_AMP_40W
Kit board MA12070P audio amplifier compatible with Arduino MKR boards

USB-C controllers
and peripherals

KIT_40W_AMPHAT_ZW
Kit board - MERUS™ audio amplifier
HAT ZW class D audio amplifier 40 W for
Raspberry Pi Zero W featuring MA12070P

Gate-driver ICs

500-950 V MOSFETs

15-300 V MOSFETs

Enabling fast time to market and device performance evaluationwww.infineon.com/ipolwww.infineon.com/iMOTION
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Solutions

Audio amplifier ICs

15-300 V MOSFETs

Applications

MERUS™ integrated audio amplifier multi-chip module (MCM) evaluation boards

Number of audio
channels: 2
Output power per
channel [RMS]: 100 W
Featured class D IC:
IR4301M
Input: Analog
OPN: IRAUDAMP19

IRAUDAMP21

Number of audio
channels: 2
Output power per
channel [RMS]: 135 W
Featured class D IC:
IR4321M
Input: Analog
OPN: IRAUDAMP21

IRAUDAMP22

500-950 V MOSFETs

Number of audio
channels: 2
Output power per
channel [RMS]: 100 W
Featured class D IC:
IR4302M
Input: Analog
OPN: IRAUDAMP17IRAUDAMP19

Number of audio
channels: 2
Output power per
channel [RMS]: 100 W
Featured class D IC:
IR4322M
Input: Analog
OPN: IRAUDAMP22

Gate-driver ICs

Number of audio
channels: 2
Output power per
channel [RMS]: 130 W
Featured class D IC:
IR4301M
Input: Analog
OPN: IRAUDAMP12IRAUDAMP17

Digital isolators

IRAUDAMP12IRAUDAMP9IRAUDAMP10IRAUDAMP23

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Number of audio
channels: 2
Output power per
channel [RMS]: 500 W
Featured driver IC: IRS2452AM
Featured MOSFET:
IRFI4019H-117P
OPN: IRAUDAMP7SWBG semiconductors

Number of audio
channels: 2
Output power per
channel [RMS]: 500 W
Featured driver IC:
IRS2452AM
Featured MOSFET:
IPP60R180C7
OPN: IRAUDAMP23

Sensors

Number of audio
channels: 2
Output power per
channel [RMS]: 370 W
Featured driver IC: IRS2052M
Featured MOSFET:
IRF6775MTRPbF
OPN: IRAUDAMP10IRAUDAMP7S

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Support

Number of audio
channels: 1
Output power per
channel [RMS]: 1700 W
Featured driver IC: IRS2092S
Featured MOSFET:IRFB4227PbF
OPN: IRAUDAMP9

Number of audio
channels: 2
Output power per
channel [RMS]: 250 W
Featured driver IC: IRS20957S
Featured MOSFET:
IRF6785MTRPbF
OPN: IRAUDAMP6Microcontrollers

IRAUDAMP6

Number of audio
channels: 2
Output power per
channel [RMS]: 120 W
Featured driver IC: IRS2092S
Featured MOSFET:
IRF6645TRPbF
OPN: IRAUDAMP5

USB-C controllers
and peripherals

IRAUDAMP5

Number of audio
channels: 2
Output power per
channel [RMS]: 120 W
Featured driver IC: IRS20957S
Featured MOSFET:
IRF6645TRPbF
OPN: IRAUDAMP4A

Power
management ICs

IRAUDAMP4A

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Discrete MERUS™ audio amplifier driver IC and MOSFET evaluation boards

412

USB-C controllers
and peripherals

Microcontrollers

Discrete audio amplifier driver IC and CoolGaN™ GIT HEMT 400 V evaluation board

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

15-300 V MOSFETs

Applications

Solutions

Audio amplifier ICs

EVAL_AUDAMP24

Sensors

WBG semiconductors

Powermanagement ICs

Number of audio
channels: 2
Output power per
channel [RMS]: 300 W at 1%
Featured driver IC: IRS20957S
Featured HEMT:IGOT40R070D1
IGT40R070D1
OPN: EVAL_AUDAMP24

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Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules
Microcontrollers

AC-DC LED driver ICs

USB-C controllers
and peripherals

Digital and mixed-signal, single- and dual-stage high-voltage
control ICs for LED driversPowermanagement ICs

XDP™ digital power – digital single- and dual-stage flyback combo controllers
The XDP™ portfolio of high-performance digital power control ICs addresses
today’s challenges, such as smart or connected lighting, meeting demanding LED
driver requirements with unique features.

Sensors

WBG semiconductors

Mixed-signal control ICs for solid-state lighting luminaires
Infineon’s mixed-signal control ICs for LED drivers deliver excellent power
quality and high efficiency for LED lighting applications, supporting down to 1
percent dimming levels. The integration of advanced functions saves external
components and minimizes system costs. The wide variety of features andfunctions gives the option to choose the best-fitting part for the application.

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Solutions

Lighting ICs

The ICL88xx family of single-stage flyback controllers for constant voltage output is tailored for LED lighting
applications to meet the required performance cost-effectively. All three ICs offer benchmarking performance forpower factor correction and total harmonic distortion at full-load and low-load conditions. Their comprehensive
protection features (see table below) and bottom-up design make them easy to design and require a minimum numberof external components. The controllers are optimized as secondary-side regulated (SSR) constant voltage (CV) output
flyback controllers and are also well suited for primary-side regulation (PSR).

Typical application schematic

Gate-driver ICs

Additionally, the controllers’ low standby power due to the integrated BM (in ICL8810, ICL8820) is ideally suited forsmart lighting systems’ requirements. The jitter function (in ICL8820) eases the design of emergency lighting LED
drivers without additional circuitry. It fulfills EMI requirements in DC operations and improves EMI performance.

Digital isolators

V OUT +
VBUS
Start-up
circuitTD

V OUT -CMC

IGBT discretes andsilicon power diodes

VCC

ZCD

VCC

L

GD
CS

DMC

ICL88xx

N

VS

GND

Intelligent powerswitches and modules

VIN

TD

500-950 V MOSFETs

Single-stage flyback LED controllers for constant voltage output

15-300 V MOSFETs

Applications

ICL8800/ICL8810/ICL8820

Key benefits

Key advantages– Optimized for SSR CV output flyback operation, additionally suited for PSR– PF > 0.9 and THD < 10% across a wide load range (AC input up to 277 VRMS)– CCM and QRM with smart valley hopping– ICL8810 also contains burst mode (BM) to ensure low standby power (< 100 mW)– ICL8820 also contains built-in jitter function– Low BOM for wide range of applications with PFC functionality where

Microcontrollers

Features and benefits

dual-stage topologies are required

USB-C controllers
and peripherals– Enables platform design and window drivers– Optimum efficiency and low EMI at low BOM without compromising light quality– ICL8810 enables in addition: smart lighting in connection with microcontrollers (standby power < 500 mW, i.e., more power budget for additional
components)– ICL8820 enables in addition: Fulfillment complying with EMI regulations in
DC operation at low cost and effort

Description

Ordering code

Single-stage flyback controller for constant voltage output

ICL8800XUMA1

REF_ICL8800_LED_43W*

Demoboard with ICL8800

REFICL8800LED43W

ICL8810Single-stage flyback controller for constant voltage output with low standby power

ICL8810XUMA1

REF_ICL8810_LED_43W_BM*

Demoboard with ICL8810 with burst mode

REFICL8810LED43WBM

REF_ICL8810_LED_42W_PSR

Demoboard with ICL8810 for primary side regulation

REFICL8810LED42WPSR

ICL8820

Single-stage flyback controller for constant voltage output with low standby power and jitter function

ICL8820XUMA1

REF_ICL8820_LED_43W_JT*

Demoboard with ICL8820 with jitter function

REFICL8820LED43WJT

Sensors

ICL8800

WBG semiconductors

Board namePowermanagement ICs

Order information for ICL88xx

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Lighting ICs

With ICL5102, Infineon offers a highly integrated combo controller IC with a universal input of 70 V to 325 V. This allows
manufacturers to realize global designs, keeping the cost for product variety and stock low. The highest efficiency of
up to 94 percent by resonant topology, a THD factor less than 3.5 percent, and a high power factor of more than 0.95
allow for more lumen output and less thermal load, enabling cost-effective designs and keeping the cost for LEDs andheat sink low. Thanks to the high integration, there is no need for additional expensive components in the PFC and LLC
stage, reducing the overall BOM cost. In addition, integrated protection features complement the ICL5102 features.

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

Gate-driver ICs

Typical application schematic

500-950 V MOSFETs

High-performance PFC + resonant controller for LCC and LLC

15-300 V MOSFETs

Applications

ICL5102

Features and benefits
Key features and benefits– Small form factor LED driver and low BOM

Microcontrollers

The high level of integration assures a low count of external components, enabling small form factor designs
and making them ideal for compact and slimline power supplies for lighting, such as LED driver for indoor
and outdoor applications– High performance, digital PFC, and advanced HB driver

The high-performance digital PFC stage achieves power factor of 99 percent, through operation in CrCM andDCM mode, in a frequency range of 22 to 500 kHz. This supports stable operation even at low-load conditions down to 0.1 percent of the nominal power without audible noise

USB-C controllers
and peripherals– Fast time-to-light and low standby

With a start-up current of less than 100 µA the controller provides very fast time-to-light within less than 300
ms, while in standby the controller changes into active burst mode which reduces power consumption toless than 300 mW– Safety firstPowermanagement ICs

The controller has a comprehensive set of protection features built in to increase the system safety. In run
mode it monitors the complete system regarding bus over- and undervoltage, open loop, overcurrent of PFC
and/or inverter, output overvoltage, overtemperature, and capacitive load operation

Order information for ICL5102
Description

Ordering code
ICL5102XUMA2

REF-ICL5102-U130W-CC

PFC/LLC-CC constant current evaluation board 130 W LED driver

REFICL5102U130WCCTOBO1

REF-ICL5102-U52W-CC

Low-cost PFC/LCC reference design 52 W LED driver, non-dimmable

REFICL5102U52WCCTOBO1

REF_ICL5102_U100W_LCC

Low-cost PFC/LCC reference design 100 W, dimmable

REFICL5102U100WLCC

REF_LLC_BUCK_4CH_320W*

Scalable 320 W multichannel high-power LED driver (using ICL5102
board and ILD8150E board)

REFLLCBUCK4CH320WTOBO1
Sensors

PFC and resonant controller for LCC and LLC

WBG semiconductors

Type
ICL5102

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Applications

SolutionsLighting ICs

ICL5102HVROVP_2

ROVP_1Cr1OVP

PFCZCD

VACIN

L4_4

HSGND

Cr2

PFCVS

D BO2

LSGD

PFCCS

RBO1

Intelligent powerswitches and modules

SFH617-A3

RBM
NTC

RBO2

Rf_minRBM_DA

IGBT discretes andsilicon power diodes

OTP

BM

BO

RF

GND

CV and CC regulator

VCC

LSCS

CVCC

Microcontrollers

Features and benefits
Key features and benefits– Small form factor LED driver and low BOM

USB-C controllers
and peripherals

The high level of integration assures a low count of external components, enabling small form factor designs
and making them ideal for compact and slimline power supplies for lighting, such as LED driver for indoor
and outdoor applications– High performance, digital PFC, and advanced HB driver

The high-performance digital PFC stage achieves power factor of 99 percent, through operation in CrCM andDCM mode, in a frequency range of 22 to 500 kHz. This supports stable operation even at low-load conditions down to 0.1 percent of the nominal power without audible noise– Fast time-to-light and low standbyPower
management ICs

With a start-up current of less than 100 µA the controller provides very fast time-to-light within less than 300
ms, while in standby the controller changes into active burst mode which reduces power consumption toless than 300 mW– Safety first

WBG semiconductors

The controller has a comprehensive set of protection features built in to increase the system safety. In run
mode it monitors the complete system regarding bus over- and undervoltage, open loop, overcurrent of PFC
and/or inverter, output overvoltage, overtemperature, and capacitive load operation

Order information for ICL5102HV
Type

500-950 V MOSFETs

V OUT +V OUT -HSVCC

ICL5102HV

D BO1

Cr3

Lr

HSGD
PFCGD

L4_3

Lm

Digital isolators

LPFC

Gate-driver ICs

ICL5102HV control IC for LED drivers offers a unique one-package solution for lighting applications up to 350 W,
supporting LLC/LCC topology. It is particularly designed to deliver best performance of total harmonic distortions(THD) and power factor (PF). Compared to level-shifter technology, the integrated coreless transformer not only further
reduces the loss at high operation frequency, but also enhances the capability of handling a huge negative voltage(-600 V on HSGND). Reduce the number of external components to optimize the form factor and reduce the bill ofmaterials (BOM) with the integrated two-stage combination controller (PFC + LLC/LCC) for lighting applications.
Simplify your design and shorten time-to-market.
Typical application schematic

15-300 V MOSFETs

High-performance PFC + resonant controller for LCC and LLC, supporting 980 V high side

Description

Ordering code

PFC and resonant controller for LCC and LLC

ICL5102HVXUMA1

REF-ICL5102HV-U150W

PFC/LCC evaluation board 150 W, CC LED driver

REFICL5102HVU150WTOBO1
Sensors

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Solutions

Lighting ICs

The XDPL8105 is a digital, single-stage flyback controller with a high power factor for a constant current LED driver. The IC isavailable in a DSO-8 package and provides a wide feature set, requiring a minimum of external components. The advanced
control algorithms in the digital core of the XDPL8105 provide multimode operation for high efficiency. Configurable
parameters allow last-minute changes, shorten the product development time, and reduce hardware variants. The extensive
configurable standards and sophisticated protection mechanisms ensure a safe, reliable, and robust LED driver device fordiverse use cases.
Typical application schematic
Iout

Digital isolators

85 …305 VAC
OutputOptional VCC

GD

XDPL8105CS

R_CS

IGBT discretes andsilicon power diodes

ZCD

Intelligent powerswitches and modules

VCC

800 V CoolMOS™ P7

regulator

HV

GND

Features and benefits
Key features and benefits

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers– Constant current with primary-side regulation– Supports AC and DC input– Nominal input voltage range 90-305 VAC or 120-350 VDC– Integrated 600 V start-up cell
– Power factor > 0.9 and THD < 15 percent over wide load range– Highly accurate primary-side control output current typ. ± 3 percent– Reference board efficiency > 90 percent– Internal temperature guard with adaptive thermal management– Multimode operation– QRM (quasi-resonant mode)– DCM (discontinuous conduction mode)– ABM (active burst mode)– Digital parameters– Relevant error conditions are monitored and protected– Undervoltage– Overvoltage– Open load
– Output shorted

Order information for XDPL8105
Description

Ordering code

XDPL8105

Digital flyback constant current controller IC

XDPL8105XUMA1

REF-XDPL8105-CDM10V

40 W reference design with CDM10V isolated 0 V-10 V dimming
interface

REFXDPL8105CDM10VTOBO1
SensorsType

500-950 V MOSFETs

XDPL8105 – digital flyback controller IC for LED driver

Gate-driver ICs

The IC family XDP™ is the first all-in-one package solution combining a digital controller with key power peripherals. Such integration provides exceptional flexibility and performance. The XDP™ family addresses essential features for advanced LED driver.

15-300 V MOSFETs

Applications

XDP™ LED

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Lighting ICs

Typical application schematic

500-950 V MOSFETs
Gate-driver ICs

The XDPL8210 is a digital, single-stage, quasi-resonant flyback controller with a high power factor and high precision
primary-side controlled constant current output. The IC is available in a DSO-8 package and provides a wide featureset, which requires only a small number of external components. Sophisticated algorithms provide flicker-freedimming below one percent. The driver fully supports IEC61000-3-2 class C designs. The limited power mode improves
functional safety, while configurable parameters allow last-minute changes, shorten product development time, andreduce hardware variants. The extensive configurable standards and sophisticated protection mechanisms ensure asafe, reliable, and robust LED driver for many use cases.

15-300 V MOSFETs

Applications

XDPL8210 – digital flyback constant current controller IC for
LED driver with 1 percent dimmingIout

90 …305 VAC
OutputDigital isolators

Optional VCC
regulator

V CC

ZCD
GD
CS

XDPL8210

Intelligent powerswitches and modules

RCS

IGBT discretes andsilicon power diodes

HV
PWM

800 V CoolMOS™ P7

CVCC

GND

Features and benefits
Key features and benefits

USB-C controllers
and peripherals

Microcontrollers– Constant current with primary-side regulation– Supports AC and DC input– Nominal input voltage range 90-305 VAC or 90-430 VDC– Reference board efficiency > 90 percent– Power factor > 0.9 and THD < 15 percent over wide load range– Standby power < 100 mW– Internal temperature guard with adaptive thermal
management

WBG semiconductors

Powermanagement ICs– Multimode operation– QRM (quasi-resonant mode)– DCM (discontinuous conduction mode)– ABM (active burst mode)– Digital parameters– Relevant error conditions are monitored and protected– Undervoltage– Overvoltage– Open load
– Output shorted

Order information for XDPL8210
Description

Ordering code

XDPL8210

Digital flyback constant current controller IC

XDPL8210XUMA1

REF-XDPL8210-U35W

35 W reference design with CDM10V isolated 0 V-10 V dimming
interface

REFXDPL8210U35WTOBO1
Sensors

Type

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Solutions

Lighting ICs

Applications

XDPL8219 – PFC/flyback controller with enhanced total harmonic distortion

500-950 V MOSFETs

15-300 V MOSFETs

The XDPL8219 is a digital high-performance secondary-side regulated flyback controller with constant voltage output.
With its high power factor, the controller is the perfect fit for cost-effective, dual-stage LED drivers and enables smart
lighting applications. TThe device operates in quasi-resonant mode (QRM) to maximize efficiency and minimize electromagnetic interference (EMI) over a wide load range. It enters active burst mode (ABM) at light load to prevent audible noise from being heard while achieving no-load standby power as low as <100 mW. The XDPL8219 is available in a
DSO-8 package.

Gate-driver ICs

Typical application schematic

OutputDigital isolators

Input

ZCD
GD

HV

CS

XDPL8219

Intelligent powerswitches and modules

800 V CoolMOS™ P7

VCC

IGBT discretes andsilicon power diodes

CVCC

RCS
FB

UART

Feedback circuit

Microcontrollers

GND

Key benefits

Key benefits– Secondary-side-regulated (SSR) constant voltage (CV) output– Flyback controller with power factor correction– Depending on load condition, either quasi-resonant, discontinuous conduc-– Supports wide load range and fast and stable reaction to dynamic loadtion mode or active burst mode (ABM)

USB-C controllers
and peripherals

Features and benefitschanges– PF > 0.9 and THD < 10% across a wide load range (AC input up to 277 VRMS)– Optimal efficiency, power factor, and THD can be achieved by best-suitedmode. In addition, DCM eases compliance with EMI at low-load condition– Integrated 600 V start-up cellPowermanagement ICs– Very low standby power < 100 mW can be achieved– Integrated start-up cell enables very high efficiency

Order information for XDPL8218
Description

Ordering code
XDPL8219XUMA1

REF-XDPL8219-U40W*

Efficient 40 W reference circuit design for XDPL8219 with high power factor andlow THD. It is built for universal input voltage 120–277 V AC or 127–432 V DCREFXDPL8219U40WTOBO1

Sensors

Digital flyback CV output controller IC

WBG semiconductors

Type
XDPL8219

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Solutions

Lighting ICs

Typical application schematic

500-950 V MOSFETs

The XDPL8221 is a digital, highly integrated, future-proof device combining a quasi-resonant PFC with a quasi-resonant
flyback controller with primary-side regulation. A serial communication interface supports direct communication withan external microcontroller unit (MCU). The XDPL8221 is specially designed for advanced LED drivers in smart lighting
or IoT applications, featuring flicker-free dimming down to 1 percent of the nominal current. The device enables acustomizable LED driver and simplifies the generation and maintenance of different variants without increasing thenumber of stock-keeping units. The IC is available in a DSO-16 package.

15-300 V MOSFETs

Applications

XDPL8221 - digital dual-stage multimode flyback controller for CC, CV, LP with 1
percent dimming and serial interface

Gate-driver ICs

L

Input
voltage
GDPFC
LED+
CSPFC

N

TEMP

Digital isolators

GDFB

CSFB
LED-

XDPL8221
HV

VCC

VS

ZCD

UART

PWM

IGBT discretes andsilicon power diodes

R_NTC
GND

Vsupply

GNDIntelligent powerswitches and modules

UART

PWM

Features and benefits
Key features and benefits

USB-C controllers
and peripherals

Microcontrollers– Nominal input voltage range 100-305 VAC or 90-430 VDC– Reference board efficiency > 90 percent– Power factor > 0.9 and THD < 15 percent over wide load range– UART interface for control and real-time monitoring– Constant current, constant voltage, limited power with primary-side regulation– 1 percent dimming– Dim-to-off with low standby power < 100 mW– Internal temperature guard with adaptive thermal management– The UART interface and the command set enable to control the function of the XDPL8221 or inquire
status information

WBG semiconductors

Powermanagement ICs– Multimode operation– QRM (quasi-resonant mode)– DCM (discontinuous conduction mode)– ABM (active burst mode)– Digital parameters– Relevant error conditions are monitored and protected– Undervoltage– Overvoltage– Open load
– Output shorted

Order information for XDPL8221
Description

Ordering code

Digital dual-stage multimode flyback controller for CC, CV, LP with 1 percent dimming XDPL8221XUMA1

REF-XDPL8221-U50W

50 W reference board with CDM10V isolated 0 V-10 V dimming interface

REFXDPL8221U50WTOBO1

REF-XDPL8221-U100W 100 W reference board with CDM10V isolated 0 V-10 V dimming interface

REFXDPL8221U100WTOBO1

Sensors

Type
XDPL8221

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Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules

DC-DC LED driver ICs

Microcontrollers

DC-DC switch mode LED driver ICs with efficiencies up to 98 percent,dimming level down to 0.5 percent

Powermanagement ICs

USB-C controllers
and peripherals

Infineon offers highly integrated DC-DC LED driver ICs that support currents up to 1.5 A, making
these drivers ideal for high- and ultrahigh-power LEDs. These highly integrated DC-DC driver
ICs achieve efficiency levels as high as 98 percent across a wide range of operation conditions.
Integrated smart thermal protection, overvoltage, and overcurrent protection contribute to alonger LED lifetime.

Go for quality with Infineon’s cost-efficient linear LED driver ICs

Sensors

WBG semiconductors

Infineon’s BCR linear driver ICs are the best choice for driving LED strings supplied by a DC voltage
source. The BCR regulators are suitable for driving currents from 10 to 250 mA, making them thebest solution for low—and mid-power LEDs. The linear controller ICs and an external power stage
allow for the greatest design flexibility for high-power LEDs.

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Lighting ICs

Applications

ILD8150/ILD8150E – 80 V DC-DC buck LED driver IC for high-power LEDs
and high-performance hybrid dimming

BOOT
SW

IGBT discretes andsilicon power diodes

DIM

Gate-driver ICs

Digital PWM dimming detection with high resolution makes ILD8150/E the perfect LED driver IC for use together withmicrocontrollers. Its precise output current accuracy from device to device under all loads and input voltage conditions
makes it perfect for tunable white and flat panel designs where the current must be identical string to string.

Digital isolators

The hysteretic current control provides extremely fast regulation, stable LED current combined with good EMI
performance. The efficiency of the LED driver IC is remarkably high, reaching more than 95 percent efficiency over awide range. A PWM input signal between 250 Hz and 20 kHz controls dimming of the LEDs current in analog mode from100 to 12.5 percent and 12.5 to 0.5 percent in PWM mode with flicker-free modulation frequency of 3.4 kHz.

500-950 V MOSFETs

15-300 V MOSFETs

The ILD8150 is an 80 V DC-DC converter IC designed to be used in LED applications to drive high-power LEDs. It
provides a high safety voltage margin for applications operating close to safe extra low voltage (SELV) limits. The buck
LED driver IC is tailored for LEDs in general lighting applications with average currents up to 1.5 A using a high-side
integrated switch. Several performance and protection features provide the right fit for professional LED lighting.

SD

ILD8150/ILD8150E
VIN

Intelligent powerswitches and modules

CS
VCC

80 V

Microcontrollers

GND

Key benefits

Key advantages– Wide input voltage ranging from 8–80 VDC– Up to 1.5 A average output current, adjustable via shunt resistor– Efficiency > 95 percent– Up to 2 MHz switching frequency– Soft-start– PWM dimming input, with 250 Hz to 20 kHz PWM dimming frequency– Hybrid dimming for flicker-free light down to 0.5 percent– Analog dimming 100 percent – 12.5 percent– PWM dimming 12.5 percent – 0.5 percent with 3.4 kHz flicker-freemodulation, dim-to-off

Description

Package

Ordering code

ILD815080 V DC-DC buck LED driver IC

DSO-8

ILD8150XUMA1

ILD8150E

80 V DC-DC buck LED driver IC

DSO-8 exposed pad

ILD8150EXUMA1

REF_ILD8150_DC_1.5A*

Reference design board 1.5 A with through hole inductor

Board with ILD8150E

REFILD8150DC15ATOBO1

REF_ILD8150_DC_1.5A*

Reference design board 1.5 A

Board with ILD8150E

REFILD8150DC15ATOBO1

REF_TW_ILD8150E_60V_1A*

Reference board for professional tunable white and multichannel applications Board with 2x ILD8150E REFTWILD8150E60V1ATOBO1
Board with 2x ILD8150E REFILD8150DC15ASMDTOBO1

Sensors

REF_ILD8150_DC_1.5A_SMD* Reference design board 1 A with SMD inductorPowermanagement ICs– Typical 3 percent output current accuracy– Overtemperature protection– Pull-down transistor to avoid LED glowing in dim-to-off– DSO-8 package to enable wave soldering– DSO-8 with exposed pad for higher thermal performance (ILD8150E)

WBG semiconductors

Type

USB-C controllers
and peripherals

Features and benefits

Click here to learn more:
www.infineon.com/ipolwww.infineon.com/iMOTION
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A unique feature of BCR601 is to that it provides feedback to the primary side via an optocoupler to control the output
voltage of the primary-side converter, e.g., XDPL8219 or ICL88xx. The integrated control loop minimizes the external
driver transistor’s voltage overhead and power dissipation. This capability, coupled with adjusting voltage overhead
by external configuration according to application needs, leads to power- and cost-efficient LED systems. AC line ripple
suppression, an analog dimming option, and various protection features round out this device for LED drivers, allowing
for flicker-free light and LED longevity.
Typical application schematic

Digital isolators

Cin
ROVP1

COVP

IGBT discretes andsilicon power diodes

ROVP2
RZENER

Controller IC,
e.g., XDPL8218

CDROP

RDROP

ROPTO

VS

BCR601

or

DRV

OPTO

GND

MFIO

VSENSEN-channel MOSFETs,e.g., OptiMOS™ BSP716N

Rset

RsenseRPI

Microcontrollers

DAC/MCU,e.g., XMC1200

VDROP

ZD1

Intelligent powerswitches and modules

OVP
COPTO

CPI

USB-C controllers
and peripherals

Features and benefits
Key features and benefits

WBG semiconductors

Powermanagement ICs– Active headroom control (supports an optocoupler feedback loop to primary side minimizing power losses)– Dimming in pure analog mode down to 3%– Suppresses the voltage ripple of the power supply driving a constant LED current for high light quality– The embedded hot-plug protection allows plug in and plug out of any LED load during operation without damaging the LEDs
– Supports wide current range depending on external driver transistor– Supply voltage range up to 60 V
– Gate driver current 10 mA– LED current can be adjusted by Rset functionality– Overtemperature protection and adjustable overvoltage protection

Order information for BCR601
Description

Ordering code

BCR601

60 V linear LED controller IC with voltage feedback to primary side

BCR601XUMA1

DEMO_BCR601_60V_IVCTRL*

Demonstration board BCR601 current and voltage control, 700 mA

DEMOBCR60160VIVCTRLTOBO1

REF_TW_BCR601_55V_0.5A*

Demoboard for design evaluation of tunable white
applications with cost-effective linear LED controllers, 500 mA

REFTWBCR60155V05ATOBO1

SensorsType

500-950 V MOSFETs

60 V linear LED controller IC with active headroom control for power- and costefficient linear regulation on DC-DC side

Gate-driver ICs

Linear current regulators

15-300 V MOSFETs

Applications

SolutionsLighting ICs

Click here to learn more:
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424Solutions

Lighting ICs

Applications

BCR601/BCR602 – 60 V linear LED controller ICs for tunable white plus active
headroom control and flexible dimming

500-950 V MOSFETs

15-300 V MOSFETs

BCR601 is a linear controller that enables high efficiency at low cost as a second-stage LED controller to replace DCDC buck converters, especially in low- to mid-power LED drivers. The cost-effectiveness, especially in multichannel
designs, can be further enhanced using BCR602 in a tiny SOT-23-6 package regulating the LED current for flicker-freedeep dimming performance.

ROV1

Cout

Gate-driver ICs

RB
ROV2
D1
D2

OVP

VDROP

VS

DRV

RD
Q1

BCR601VS

BCR602

DP10

GND

TTST

GND

VF10

VSENSEMFID

VSENSE

Dim_In_CW

Q2DRV

IGBT discretes andsilicon power diodes

RFBIntelligent powerswitches and modules

ROC

Digital isolators

CFB

Dim_In_WW– Linear regulators give considerable cost advantage over buck topology– Cost advantage increases with additional channels– Efficiency can be on par with buck (depends on output ripple of first stage)– Highest light quality, zero ripple– Deep, full analog dimming– Easy to extend to additional outputs (e.g., RGBW)

nels and the current of one channel– BCR602, as slave controller, regulates current of second channel– Input voltage up to 60 V
– Can be operated with either BJT or N-channel MOSFET– Analog dimming down to 3%, PWM dimming down to 1% (BCR602)– Current precision ±3%– OTP, OVP, hot-plug protection

USB-C controllers
and peripherals

Key advantages– BCR601, as the master controller, controls the voltage overhead of both chan-Powermanagement ICs

Key benefits

Microcontrollers

Features and benefits

Order information
Description

Ordering code

BCR601

60 V linear LED controller IC with voltage feedback to primary side

BCR601XUMA1

DEMO_BCR601_60V_IVCTRL*

Demonstration board BCR601 current and voltage control, 700 mA

DEMOBCR60160VIVCTRLTOBO1

BCR60260 V linear LED controller IC

BCR602XTSA1

DEMO_BCR602_60V_ICTRL*

Demoboard for design evaluation of cost-efficient, highly reliable,
dimmable LED engines/modules, 60 V, 200 mA

DEMOBCR60260VICTRLTOBO1

Sensors

Demoboard for design evaluation of tunable white applications with REFTWBCR60155V05ATOBO1
cost-effective linear LED controllers BCR601/BCR602, 500 mA

WBG semiconductors

Type
REF_TW_BCR601_55V_0.5A*

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425Solutions

Lighting ICs

Applications

BCR43x linear LED driver ICs for low-power LEDs

The advantages over resistor biasing are:15-300 V MOSFETs

The BCR3x family is the smallest and lowest-cost series of LED drivers. These products are perfectly suited for driving
low-power LEDs in general lighting applications.

Need more details on replacing
resistors?

500-950 V MOSFETs‒ Long lifetime of LEDs due to constant current in each LED string‒ Homogenous LED light output independent of LED forward

The advantages over discrete semiconductors are:
‒ Reduced part count and assembly effort‒ Pretested output current‒ Defined negative temperature co-efficient protection

Gate-driver ICs

voltage binning, temperature increase, andsupply voltage variations

Digital isolators

Download now the application note
“Driving low power LEDs from10 to 65 mA LED driver ICs”

Features and benefits
Key features and benefits

110

The voltage drop at the integrated LED driver stage can go down to 135 mV
at 50 mA or less, improving the overall system efficiency and providing extra
voltage headroom to compensate for LED forward voltage or supply voltage
tolerances. With the BCR430U and BCR431U, additional LEDs can be added
to lighting designs or longer LED strips can be created without changing the
supply voltage.

100
90
ILED [mA]

80
70
60
Rset = 6.2 kΩ
Rset = 9.1 kΩ

50
40
30
100

150

200

250
Vdrop [mV]

300

350

400

Low-power LED driver ICs (5-100 mA)
Vs (max.)[V]

LED drivers for low-power LEDs Linear

6

42

Defined by Rset 100

BCR431U** LED drivers for low-power LEDs Linear

6

42

Defined by Rset 42

BCR430U*

Type

Description

Iout (typ.)[mA]

Iout (max.)[mA]

Dimming

Package

Ptot (max.)[ mW]

PWM byexternaltransistor

SOT-23600

BCR430UXTSA2

SOT-23600

BCR431UXTSA1

Ordering codePowermanagement ICs

TopologyGroup

WBG semiconductors

Vs (min.)
[V]

Type

Ordering code

Low-power demoboard with 8 LEDs, 50 mA

BCR430ULEDBOARDTOBO11

DEMO_BCR431U_LVDROP

Low-power demoboard with 8 LEDs, 15 mA

DEMOBCR431ULVDROPTOBO1

Sensors

BCR430U LED BOARD

USB-C controllers
and peripherals

LED current versus voltage drop (VS = 24 V)

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes– Output current from 8 to 100 mA (adjustable by external resistor)– Supply voltage up to 40 V (BCR430U, BCR431U*)– Reduction of output current at high temperature, contributing to long lifetime LED systems– Extra low voltage drop for more voltage headroom and flexibility in designs (BCR430U, BCR431U)– Excellent ESD performance on device and system level for BCR43xU– Very small form factor packages with up to 600 mW max. power handling capability

Click here to learn more:
www.infineon.com/ipolwww.infineon.com/iMOTION
www.infineon.com/digital-controller www.infineon.com/motix* Ultralow voltage drop version BCR430U with only 135 mV at 50 mA** Ultralow voltage drop version BCR431U with only 115 mV at 15 mA

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426Applications

SolutionsLighting ICs

15-300 V MOSFETs

CDM10V and CDM10VD – most flexible
dimming interface ICs for 0-10 V input
Infineon’s fully integrated dimming solutions

Gate-driver ICs

500-950 V MOSFETs

Infineon’s CDM10V and CDM10VD are the industry’s first single-chip lighting interface ICs. They can transform ananalog 0–10 V input into a PWM or dimming input signal required by a lighting controller IC. CDM10V and CDM10VD
devices are dedicated to commercial and industrial LED lighting applications. Compact and highly integrated devices
allow designers to replace up to 25 discrete components with a single device used in conventional 0–10 V dimming
schemes. Supplied in an ultra-miniature 6-pin SOT package, the CDM10Vx and CDM10VDx perfectly match small PCBs
with high component densities.

Digital isolators

Typical application schematic using CDM10V

85–305 V AC
Linefilter

CDM10V

ICL8105

VCC supply
11–25 V

VCC

LDO

Rdim+

Bandgap› 0–10 V interface› Resistor/potentiometer› PWM-generator

UVLO

GND

VFSS

ADC
8-bit

FSM

Current
sourcePWM_out

PWM_geneFuses8-bit

AnalogUART

RxD

DigitalIntelligent powerswitches and modules

Iout

IGBT discretes andsilicon power diodes

OSC
Current
sourceDIM

Key advantages– Active dimming (0–10 V) and passive dimming (resistor)– Embedded digital signal processing which maintains minimum variations– Single-device solution leading to low BOM and PCB savings– Dimming ICs in small SOT-23 package for high power density designs– Granular portfolio for highest flexibility and easy design-in– Wide input VCC range 11–25 V, extended range down to 6 V for CDM10V– Attractive pricing and faster time to market

Product type

Iout
[mA]

Min. duty cycle [%]PWM output
frequency [kHz]Dimmer/resistor bias
current [μA]

Dimm-to-off

Ordering code

CDM10V5

1/2/5/10

0.2/0.5/1/2

50/100/200/500

Disabled/enabled

CDM10VXTSA1

CDM10V-2

5

n.a.

1

200

Enabled

CDM10V2XTSA1

CDM10V-3

5

1

1

200

Disabled

CDM10V3XTSA1

CDM10V-4

5

n.a.

2

100

Enabled

CDM10V4XTSA1

CDM10VD

5

5

1

120

Enabled

CDM10VDXTSA1

CDM10VD-2

5

10

1

120

Enabled

CDM10V2DXTSA1

CDM10VD-3

1

5

1

120

Enabled

CDM10V3DXTSA1

CDM10VD-4

1

10

1

120

Enabled

CDM10V4DXTSA1

Board name

Description
40 W single-stage PFC FB digital power reference design with CDM10V

Ordering code
REFXDPL8105CDM10VTOBO1

Sensors

REF-XDPL8105-CDM10V

Power
management ICs

various feature sets

WBG semiconductors

from device to device– PWM input– One-time configurable device: CDM10V and preconfigured devices with

USB-C controllers
and peripherals

Key benefits

Microcontrollers

Features and benefits

Click here to learn more:
www.infineon.com/ipolwww.infineon.com/iMOTION
www.infineon.com/digital-controller www.infineon.com/motix

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427

Lighting ICs

Applications

Solutions

NLM product series

NFC-PWM configuration ICs

15-300 V MOSFETs

Dual-mode NFC wireless configuration ICs with CLO function and pulse-widthmodulation (PWM) output for lighting applications

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

The NLM0011 is a dual-mode NFC wireless configuration IC with PWM output. It is compatible with existing analog LED
driver designs and with the NFC-programming specification from the module-driver interface special interest group(MD-SIG). This device is primarily designed for LED applications to enable NFC programming. In addition, advanced
features, such as the constant lumen output (CLO) and the on/off counting, are integrated, and there is no need for an
additional microcontroller. Since the NLM0011 is designed to work with mainstream analog driver ICs, no firmware
development efforts are needed. It can be easily adapted into existing designs to replace the “plug-in resistor” current
configuration concept. The NLM0010 is a light version without the CLO function.
Typical example of NFC lighting application

Current adjustable
LED driver IC

IADJ
ISET
ADIMM

PWM

IGBT discretes andsilicon power diodes

NLM0011/NLM0010

R1

LB

C1
GND
CVCC
VCC

LA

Intelligent powerswitches and modules

VCC

GND

Key benefits

Key advantages– Configurable pulse-width modulation (PWM) output– NFC contactless interface compliant to ISO/IEC 18000-3 mode 1 (ISO/IEC– Fast and cost-effective implementation of NFC programming and CLO without– Constant light output (CLO) with 8 configurable points– Integrated operation-time counter (OTC) and on/off counter– Non-volatile memory (NVM) including UID and 20 bytes free memory for user data

the need of an additional microcontroller– Compatible with most analog LED driver designs using the „plug-in resistor“
method– Stable PWM output with fixed 2.8 V amplitude and ±0.1% duty cycle accuracy– Internal voltage regulator (LDO) to avoid influence of instable external supply voltage

USB-C controllers
and peripherals

15963)

Microcontrollers

Features and benefits

Description

Package

WBG semiconductors

Type

Power
management ICs

EVAL_NLM0011_DC – evaluation board demo kit
This evaluation board not only enables fast demonstration of NFC-PWM
configuration ICs with NLM0011 through the NFC-PWM mobile app, butalso accelerates the development of the NFC-reader software. EVAL_NLM0011_DC does not require a full system but allows NFC configurationfor existing LED driver boards.
Ordering code: EVALNLM0011DCTOBO1
Ordering code

Dual-mode NFC configuration IC with PWM output and CLO function

SOT-23-5

NLM0011XTSA1

NLM0010Dual-mode NFC configuration IC with PWM output, without CLO function

SOT-23-5

NLM0010XTSA1
Sensors

NLM0011

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428Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules

iMOTION™ integrated motor control solutions
A family of highly integrated products for the control of a variable speed drive

The MCE implements highly efficient motor control and an optional power factor correction (PFC) and integrates
all necessary protections and a flexible scripting engine. Assisted by powerful tools like the iMOTION™ Solution
Designer (iSD), the motor can be up and running in less than an hour. Integrated support for functional safety for home
appliances paves the way to meeting regulations in the global market.

Sensors

WBG semiconductors

Infineon provides complete solutions for motor control with its combined offering of iMOTION™ together with
EiceDRIVER™ gate drivers, TRENCHSTOP™ IGBTs, CoolMOS™ MOSFETs, and CIPOS™ IPMs.

Powermanagement ICs

Infineon’s field-proven Motion Control Engine (MCE) eliminates software coding from the motor control development
process, reducing the effort required to configure the respective motor and power stage.

USB-C controllers
and peripherals

Microcontrollers

iMOTION™ products are offered in several integration levels including hardware and software. The hardware
integration comprises stand-alone motor controllers (iMOTION™ controller), motor controllers with integrated gate
drivers (iMOTION™ driver), and fully integrated inverters-in-a-package (iMOTION™ IPM). In terms of software, Infineon
offers full turnkey solutions as well as freely programmable modules.

Click here to learn more:
www.infineon.com/ipolwww.infineon.com/iMOTION
www.infineon.com/digital-controller www.infineon.com/motix

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429Solutions

iMOTION™ motor control ICs

The iMOTION™ controllers consist of two families: iMOTION™ IMC100 is a series of highly integrated ICs for controllingvariable speed drives. Integrating the required hardware and algorithm to perform control of a three-phase motor
provides the shortest time-to-market for any motor system at the lowest system and development cost. Combining theiMOTION™ IMC100 with an additional microcontroller based on the Arm® Cortex®-M0 core the iMOTION™ IMC300 series
is the perfect fit for applications requiring application flexibility beyond
pure motor and PFC control.

Status LED
temp sense
GPIO
AnalogDigital isolators
IGBT discretes andsilicon power diodes

UART

Power supply

IMC300

IMC100Arm®
Cortex® -M0

iMOTION™
MCE› MCE supervision› Sensors› Actuators› Communication› Additional safety› Motor control› PFC control› Protection› Scripting› Safety

Gate driverPower stage

3x HS

3x LS

Intelligent powerswitches and modules

Power factor
correction
boost/totem pole

Gate-driver ICs

Infineon’s field-proven Motion Control Engine (MCE) implements field-oriented control (FOC) using single or leg shuntcurrent feedback and uses space vector PWM with sinusoidal signals to achieve the highest energy efficiency. The MCE
can run sensorless as well as using Hall sensors for low speed operation. It also integrates multiple protection features
like over- and undervoltage, overcurrent, rotor lock etc. The integrated scripting engine grants flexibility for a wide range
of applications. The IMC100/300 series is offered in several device variants. All devices can be used in applications
requiring functional safety acc. to IEC/UL 60730 (‘Class B’). With this wide application scope, the iMOTION™ controller
is the perfect choice for any highly efficient variable speed drive - from low to high voltage.

500-950 V MOSFETs

Motor/PFC controller plus optional MCU for maximum flexibility

15-300 V MOSFETs

Applications

iMOTION™ controllerMHall(option)– Easy motor parametrization and tuning– Low BOM cost for active PFC applications– Safeguard power stage and motor– Maximum flexibility for customer functions– Full flexibility for custom functions or communication– Support for functional safety integrated

USB-C controllers
and peripherals

Key benefits– Completely self-sustaining Motion Control Engine– Option for boost or totem pole PFC– Integrated protection features– Scripting engine for application flexibility– Additional independent microcontroller– Support for IEC 60335-1 (‘Class B’)Powermanagement ICs

Key features

Microcontrollers

Features and benefits

Sensors

WBG semiconductors

The REF-VACUUM_C101_2ED is a reference design kit
featuring IMC101T iMOTION™ controller, 2ED2304 SOI
half-bridge gate driver, and BSC030N04NS OptiMOS™.
It demonstrates our thin-film-SOI and advanced MCE
technologies for low-voltage, permanent-magnet motor
drives up to 120 KRPM speed and inverter section ratingsof 30 V and 25 A. It is optimized for major low-voltage home
appliances like vacuums, fans, pumps, and compressors.

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Solutions

iMOTION™ driverPower
factorcorrection

Power supply

IMD112
V_reg

Three-phase power stage
6 x MOSFET or 6 x IGBT

Gate driver

iMOTION™
MCE

Status LED
temp senseM› Motor control› PFC control› Protection› Scripting› Safety

GIPIO
AnalogIntelligent powerswitches and modules

3 x HS
UART

500-950 V MOSFETs
IGBT discretes andsilicon power diodes

Block diagram

Gate-driver ICs

The iMOTION™ IMD110 is a series of highly integrated ICs for controlling three-phase motors. The IMD110 drivers arean optimal combination of a ready-to-use motor and (optional) PFC controller with a high-voltage three-phase SOI gate
driver and a voltage regulator. They can be combined with almost any low- to high-voltage MOSFET or IGBT to create avery compact yet highly flexible drive solution. The full set of protections, improved clearance, and creepage make the
IMD110 a highly robust and reliable driver family.
The family implements the identical field-proven Motion Control Engine (MCE) as the iMOTION™ controller family. The
scripting engine that executes customer scripts with access to the MCE, a high number of GPIOs, analog inputs, and aconfigurable UART grants flexibility for a wide range of applications. Based on Infineon’s latest SOI technology, the threephase gate driver exhibits market-leading robustness and lowest failure rates. The very low level-shift losses reduce thermal
stress and allow high-frequency operation, while the built-in bootstrap diodes help to reduce PCB space and cost. Protections
like over- and undervoltage lockout and cross-conduction prevention safeguard the power stage during erroneous conditions.
All IMD110 devices support the functional safety requirements according to the IEC/UL 60730-1 (‘Class B’).

Digital isolators

Motor/PFC controller with gate driver and voltage regulator

15-300 V MOSFETs

Applications

iMOTION™ driver

3 x LSHall(option)Microcontrollers

Current sensing single/leg shunt
Position sensing sensorless/Hall– Fastest time to market with easy parametrization and tuning of motor and PFC– Option for boost or totem pole PFC– High-voltage three-phase gate driver and built-in bootstrap diodes– Single layer design possible– Support for IEC 60335-1 (‘Class B’)– Low BOM cost for active PFC applications– Reducing BOM and PCB space– Reducing PCB and production costs– Support for functional safety integrated

the IMC100 series

control

Sensors

The REF_FRIDGE_D111T_MOS board is a ready-to-use three-phase inverter
designed for refrigerator compressors featuring the iMOTION™ driver. The 600 V
CoolMOS™ PFD7 super junction MOSFET demonstrates market-leading
light-load efficiency. The board provides a single-phase AC-connector, rectifier, andthree-phase output for the motor. Targeting low-cost applications, the motor is
run with sensorless field-oriented control (FOC) using single-shunt current sensing.
The direct sensing of all voltages and currents does not require any OpAamp.

Power
management ICs

Key benefits– Completely self-sustaining Motion Control Engine with identical feature set as

WBG semiconductors

Key features

USB-C controllers
and peripherals

Features and benefits

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Solutions

iMOTION™ tools anddevelopment support

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

The integrated help describing all parameters in detail assists in drive configuration. After downloading the parameter
sets into the iMOTION™ device, customer-configurable dashboards help with starting and running the motor and tuning
the control loop parameters to the desired behavior. All relevant parameters, like voltages, currents, torque, and speed,
can be visualized in real-time on the 8-channel oscilloscope. Going one step beyond the configuration of the motor and
PFC, the integrated editor, compiler, and debugger help develop scripts for the iMOTION™ script engine.

USB-C controllers
and peripherals– One common tool and consistent workflow for all iMOTION™ products– Easy handling of parameter sets with fully integrated help system– Fully configurable for individual testing and tuning stages– Real-time insight into all motor and PFC parameters– Assisted creation of scripts and live debugging including breakpoints– Unified data handling from project to device– Project centric work and ease of creating derived projects

iMOTION2Go
Getting familiar with iMOTION™ firmware, features, and tools

Sensors

The iMOTION2go kit is powered via USB and contains a complete motor
control system on a small form factor board. It is particularly usefulfor a first evaluation of the iMOTION™ firmware and tools like theiMOTION™ Solution Designer. This combination of the IMC101 motor
control IC with the Solution Designer supports all project stages fromdrive configuration up to optimization and tuning using dashboards andoscilloscope. Scripting can be practiced by downloading and debugging
via the IDE integrated in the Solution Designer.

Powermanagement ICs– Integrated PC tool for all devices in all project phases– Configuration wizard for motor and PFC parameter sets
– Dashboards for typical design steps, customer configurable– Oscilloscope with 8 channels– Full IDE for editing, compiling, and debugging of scripts– Programmer for firmware, parameter sets, and scripts– Catalogs for devices, boards, loads, and projects

WBG semiconductors

Key benefits

Microcontrollers

Features and benefits
Key features

500-950 V MOSFETs
Digital isolators

The iMOTION™ Solution Designer is the
new all-in-one PC tool that supports
the iMOTION™ products in all stagesof a motor control project. A new
project can be started by choosing oneof the preconfigured applications, anevaluation board, or a specific device.
Solution Designer offers individual views
for all design steps, from configuration
to the final tuning of the control loop.

Gate-driver ICs

The easy way to get started with motor control

15-300 V MOSFETs

Applications

iMOTION™ tools and development support

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432Solutions

iMOTION™ tools anddevelopment support

Applications

iMOTION™ Modular Application Design Kit
Powerboards

5 V/1 W

15-300 V MOSFETs

Get a motor running in less than 1 hour!

1200 V/10 kW

500-950 V MOSFETs(Examples)

Gate-driver ICs

Controller
boards(Examples)

Digital isolators

EVAL-M7-D111T
iMOTION™
IMD111T-6F040

IGBT discretes andsilicon power diodes

M1/3/7 platform interface - multiple different combinations are possible

iMOTION™ Link is an isolated debug probe for all iMOTION™ motor
control products. It connects to the user’s target board (final application
board) or any other evaluation or reference board via a galvanicallyisolated interface. iMOTION™ Solution Designer is then used for
configuring, parameterizing, and tuning the respective iMOTION™ device.
In addition to the serial interface, iMOTION™ Link provides a standardArm® SWD debug connection for programming the MCU core in devices
like the IMC300 series.

USB-C controllers
and peripherals

iMOTION™ Link
Isolated debug interface for final application boardsPowermanagement ICs

While the M1 platform provides control of a permanent magnet synchronous motor (PMSM), the M3 platform
additionally includes an active power factor correction (PFC) implemented as a CCM boost PFC.
The M7 platform is based on the iMOTION™ driver series IMD110. The gate driver is contained on the control board, andthe power boards use different types of discrete power devices, thus covering a wide voltage range from 20 to 600 V
with either MOSFETs or IGBTs. Boards with M7 connectors are available with and without active PFC.

Microcontrollers

Intelligent powerswitches and modules

The iMOTION™ Modular Application Design Kit (MADK) is an evaluation platform targeting variable speed-drive
applications up to 10 kW. The platform offers a modular and scalable system solution with different control board
options and a wide range of power boards. Using the iMOTION™ MADK standardized platform interfaces, different
control and power boards can be combined into a system that perfectly meets the requirements of the final
application. This modular approach allows developers maximum flexibility and scalability during the evaluation anddevelopment phase at affordable costs.

WBG semiconductors

EVAL-M3-302F
iMOTION™
IMC302A-F064

Sensors

EVAL-M1-101T
iMOTION™
IMC101T-T038

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Applications

Solutions

MOTIX™ motor control ICs

MOTIX™ motor control ICs

15-300 V MOSFETs

A scalable product portfolio from low to high levels of integration

Communication

Microcontroller

MOSFET
Gate
driverPower

Communication

SensorMicrocontroller

MOSFET
Gate
driverPower

Communication

Sensor

MOTIX™ MCU (SoC/SiP)

SensorMOSFET
Gate
driverPower
Communication 1)

Gate-driver ICs

Power

Microcontroller

MOSFET
Gate
driver

MOTIX™ SBC

Sensor

MOTIX™
multi MOSFET gate driver ICs

MOTIX™
single half-bridge ICs

MOTIX™
motor system ICs (SBC)

MOTIX™ 2)
32-bit motor control SoC

TLE92104/8 / TLE7181/2

BTNxxxx / IFX007

TLE956x

TLE98xx

MOTIX™
motor gate driver ICs

MOTIX™
multi half-bridge ICs

MOTIX™
32-bit motor control SiP

TLE718x / TLE918x / TLE9140

TLE94xxx / TLE8444 / TLE420x

IMD700A / IMD701A

6EDL7141

MOTIX™
full-bridge ICs

Digital isolators

Microcontroller

MOTIX™ Bridge

IGBT discretes andsilicon power diodes

MOTIX™ Driver

500-950 V MOSFETs

Infineon is your trusted partner and one-stop shop for motor control solutions and offers with MOTIX™ a wide
selection of different motor control ICs. Customers can choose from a scalable product portfolio from low tohigh integration levels and benefit from a well-rounded support ecosystem with tools and software.

1) Partially, all TLE98xx devices with LIN or CAN (FD)2) Microcontroller chapter: page 289

TLE9201 / IFX9201
TLE7209 / TLE8209

Microcontrollers
USB-C controllers
and peripherals

evaluation and productive use in vehicle
motor control systems‒ Developed and tested on motor control HW/SW
reference systems‒ Designed to utilize best HW capabilities of Infineon ICs andconfigurable to state of the art motor control use cases‒ MOTIX™ Tools for evaluation and development

Your benefits‒ Spare development efforts without compromisingsystem performance‒ Free source code evaluation option and production
ready SW with comprehensive user documentationand verification/ test reports‒ End-to-end engineering service provider MOTEON

Power
management ICs

MOTIX™ Software system approach‒ Portfolio of dependable SW building blocks forIntelligent powerswitches and modules

Accelerate your embedded motor control development with MOTIX™ Software

MOTIX™
Motor control library

Abstraction layer

MOTIX™
complex/device driver

MOTIX™ low-level driver

Low-level driver‒ MOTIX™ Low-level Driver for MOTIX™ MCU (SoC)‒ MOTIX™ Device Driver for initialization and in-system

WBG semiconductors

Custom SW

evaluation of MOTIX™/ EiceDRIVER™ devices‒ MOTIX™ Complex Device Driver for ASIL D applications with
MOTIX™/ EiceDRIVER™ devices on AURIX™
‒ MOTIX™ Motor Control Library featuring field-oriented
control of BLDC motors in pumps, fans and compressors

Sensors

LIN, CAN,
protection, crypto

Application SW

MOTIX™ MCU / host

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434

Applications

Solutions

MOTIX™ motor control ICs

MOTIX™ multi MOSFET gate driver ICs

15-300 V MOSFETs

Multiple half-bridge drivers designed to control up to eight half-bridges

Gate-driver ICs

500-950 V MOSFETs

Infineon’s MOTIX™ TLE9210x is a family of multi MOSFET gate driver ICs, designed to control up to eight half-bridges(up to 16 N-channel MOSFETs) with one packaged device. Having only one device for several half-bridges enables
further savings, such as less pick and place costs and less required PCB area than discrete solutions.
The MOTIX™ TLE92108 and MOTIX™ TLE92104 multiple MOSFET drivers offer a reliable and cost-optimized solution
with state-of-the-art diagnostics and protection. The devices of the MOTIX™ TLE9210x family are pin andsoftware-compatible. Furthermore, the product family allows motor cascading: with TLE92108 (8 half-bridges),up to 7 bidirectional DC motors can be driven.
+12 V

TLE92108-23xQX

VS

Digital isolators

DH
2-stage CP

LIN/CAN

Systembasis chip

Logic
RSHUNT1

Watchdog

Current sense
amplifier 1

SPI

M

M

IGBT discretes andsilicon power diodes

DH
VDD

M

Brake mode

Diagnostics

Current
control
gate drivers

DHIntelligent powerswitches and modules

Protections

8x HB
RSHUNT2

Adaptivegate control

Current sense
amplifier 2

DH

Microcontroller
PWM
mapping

M

M

Microcontrollers

M

CSA config.

Shuntresistors

USB-C controllers
and peripherals

2x CS
amplifiers

Product table
Description

Brake mode

Package

Ordering code

No

PG-VQFN-48

TLE92108231QXXUMA1

TLE92108-232QX

8-fold MOTIX™ multi MOSFET gate driver ICs

Yes

PG-VQFN-48

TLE92108232QXXUMA1

TLE92104-131QX

4-fold MOTIX™ multi MOSFET gate driver ICs

No

PG-VQFN-48

TLE92104131QXXUMA1

TLE92104-232QX

4-fold MOTIX™ multi MOSFET gate driver ICs

Yes

PG-VQFN-48

TLE92104232QXXUMA1

Sensors

WBG semiconductors

8-fold MOTIX™ multi MOSFET gate driver ICs

Powermanagement ICs

Type
TLE92108-231QX

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435Solutions

MOTIX™ motor control ICs

Applications

MOTIX™ TLE92104-23QX APPKIT and
MOTIX™ TLE92108-23QX APPKIT

15-300 V MOSFETs

Infineon’s evaluation boards to measure and evaluate the hardware andsoftware functionalities of the MOTIX™ multi MOSFET gate driver family.

Gate-driver ICs

500-950 V MOSFETs

The TLE92104-23QX APPKIT contains the multi MOSFET
gate driver IC TLE92104-232QX, and a typical application
circuit, including 4 MOSFET half-bridges (OptiMOS™ 40 V
MOSFETs in S3O8 package) to drive up to 3 bidirectional DC
motors.

Digital isolators

The TLE92108-23QX APPKIT contains the multi MOSFET
gate driver IC the TLE92108-232QX and a typical application
circuit, including 8 MOSFET half-bridges (OptiMOS™ 40 V in
S3O8 package) to drive up to 7 bidirectional DC motors.

IGBT discretes andsilicon power diodes

The application boards can be connected via a UIO stickwith the computer to evaluate their features via config
wizard (a graphical user interface), which can be found in
the Infineon Developer Center.

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

Ordering code: TLE9210423QXAPPKITTOBO1
Ordering code: TLE9210823QXAPPKITTOBO1

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436Applications

Solutions

MOTIX™ motor control ICs

MOTIX™ TLE9140

15-300 V MOSFETs

Gate driver IC for BLDC motor control applications

Gate-driver ICs

500-950 V MOSFETs

MOTIX™ TLE9140 is a 3-phase motor gate drive IC targeting 24/48V battery supplied applications, where higher
system reliability and faster switching behavior are necessary. The IC is the ideal complement to Infineon’s
MOTIX™ MCU TLE987x and TLE989x 32-bit motor control SoC solutions but is also suitable as a 48 V BLDC
driver with common MCUs on the market. TLE9140 is applied as a 3-phase motor gate driver for applications in
automotive, commercial, construction, and agricultural (CAV) vehicles as well as in light electric vehicles (LEV)such as eBikes, eScooters, or eMotorcycles.

Digital isolators

The MOTIX™ TLE9140 gate driver IC for BLDC motors is ISO 26262-compliant (ASIL B) and equipped withcomprehensive protection and diagnosis features. The IC enables SPI communication and has an active lowside (LS) freewheeling function during VSM overvoltage (OV). The integrated adaptive MOSFET control feature
can help improve EME, reduce power losses, and save on external components needed in the application.
Furthermore, the small TS-DSO-32 packing enables space and weight reduction on the PCB.

Key features

Key benefits– Gate driving capability: ~230 nC / MOSFET up to 20 kHz– Adaptive MOSFET control feature integrated into gate driver– Comprehensive protection and diagnostic features integrated– Designed in a compact package TS-DSO-32 (8.65 x 3,9 mm²)
– Automotive grade 0 qualified and ASIL B compliant– Easy approach and scaling for 24 V/48 V applications in conjunction with our

IGBT discretes andsilicon power diodes

Features and benefits

MOTIX™ MCU TLE987x / TLE989x or with any other open market MCU– Can assist customers in achieving improved EMC performance and reduce

Intelligent powerswitches and modules

power dissipation

Microcontrollers– Allows for active monitoring of device state and protects system from damage– Able to reduce PCB space requirements– High system reliability and meets challenging mission profiles

Block diagram
OPTIREG™
TLD6098-1EP(DC-DC)48 V battery

Temperature
warning andshutdown

Control logic
16-bit SPI
Watchdog

The MOTIX™ TLE9140 Evaluation Board
contains the TLE9140EQW, TLE987x, and their
typical application circuits including threehalf-bridges to drive a BLDC motor.

OptiMOS™
6x IAUT200N08S5N023
B6- BridgeProtections

MOTIX™ MCU(SoC)
TLE987xEN

Diagnostic
MOSFET
controlGate drivers
VDS
monitoring

Safe switch
off path

Safe switch
off path

Z

M

ILx/IHxXENSIV™
TLE4961

Evaluate TLE9140EQW in two scenarios:‒ MOTIX™ 48 V gate driver TLE9140EQW
controlled by MOTIX™ MCU (SoC) device
TLE987x‒ Evaluate MOTIX™ 48 V gate driver
TLE9140EQW with Configuration Wizard in
the Infineon Developer Center (IDC)

WBG semiconductors

SPI

Internal supplyDH

Sensors

UV & OV
detection

Charge pump
VDD

Power
management ICs

MOTIX™ Driver
TLE9140EQW

USB-C controllers
and peripherals

VSM

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437Solutions

MOTIX™ motor control ICs

Applications

MOTIX™ 6EDL7141

15-300 V MOSFETs

Three-phase smart gate drive controller IC

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

The MOTIX™ 6EDL7141 is Infineon’s latest three-phase motor control gate driver IC, enabling the development of highperformance battery-operated products using BLDC or PMSM motors. Ideal applications include cordless power tools,
gardening products, and automated guided vehicles. With over 50 programmable parameters using a built-in digital SPI
interface, the MOTIX™ 6EDL7141 is fully configurable to drive a wide range of MOSFETs to yield the best possible systemefficiency. The MOTIX™ 6EDL7141 is also designed for maximum flexibility. With an operating voltage from 5.5-70 V andconfigurable gate drive sink and source current up to 1.5 A, it can effectively drive a wide range of MOSFETs to fit theapplication best. Thanks to built-in dual charge pumps, it has an adjustable gate driver supply voltage setting between
7 V, 10 V, 12 V, and 15 V, even at low battery voltage. The MOTIX™ 6EDL7141 also has adjustable gate driver parameters
to enable control of the slew rate to minimize system EMI. All of the MOTIX™ 6EDL7141 settings can be quickly changed
with the available easy-to-use GUI. The integrated buck regulator requires only an external capacitor and inductor toprovide power for the microcontroller and the Hall sensors in the motor, further reducing fault conditions.

IGBT discretes andsilicon power diodes

EVAL_6EDL7141_TRAP_1SH‒ Single shunt evaluation board for trapezoidal commutation of BLDC motors
with 40 V OptiMOS™ 5 PQFN and XMC1404 MCU‒ On-board programming dongle‒ Featured IC: MOTIX™ 6EDL7141

Key benefits– Integrated power supplies– Adjustable slew rate
– Programmable gate drive parameters– 3x current shunt amplifier– Complete dedicated motor control protection suite– Reduced external components and PCB area
– Optimized efficiency and EMI– Maximum flexibility to use diff erent inverter FETs
– Highly accurate current sense while saving external components– Higher dynamic range to increase signal resolution– Improve reliability and fault detection

Block diagram

Microcontrollers

Key features

Intelligent powerswitches and modules

Features and benefits

MOTIX™ 6EDL7141
Buck converter+
Linear regulator

USB-C controllers
and peripherals

Battery

Core
GD _A

-------

MCU

SPI

SPI

3-phaseinverter

PWM logic
PWM

Memory

GD _B

M

GD _C
Hall
sensors-------

Protections

WBG semiconductors

Protections notification

Powermanagement ICs

PWM

OpAmp
OpAmp
OpAmp

Current measurement

Product portfolio
Package
PG-VQFN-48-78

Voltage [V]
5.5 – 70 V

RDS(on),max. [ mΩ]

Sensors

Part number
6EDL7141

2.2

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IMD700A
6EDL7141

Arm®
Cortex®-M0
48 MHz

Other
components

Hall sensor
interface
POSI F

Battery

GD_A

PWM
timer
CCU8

PWM Logic

PWM

PWM

SupplyTimers USIC

Buck converter+ Linear regulator

USIC

SPI

SPI

MemoryGPIO

Protections notification

Protections

GD_B

3-phaseinverterHallsensors

M

GD_C

GPIOs

ADC andanalog comparators

500-950 V MOSFETs

OpAmp

USB-C controllers
and peripherals

MATH Coprocessor
Flash/RAM

EVR

SupplyMicrocontrollers

XMC1400

Gate-driver ICs
Intelligent powerswitches and modules

Today’s newest battery-operated motor drive applications require increased power density and longer run-time, which needs
higher efficiency. MOTIX ™ IMD700A and IMD701A are Infineon’s latest fully programmable motor controllers integrating
XMC1404 microcontroller with MOTIX™ 6EDL7141 3-phase gate driver IC in one package to enable the development of nextgeneration battery-operated products using BLDC or PMSM motors. These controllers are ideal for applications such asprofessional cordless power tools, gardening products, e-bikes, and automated guided vehicles. With integrated precision
power supply and current shunt amplifiers, much of the peripheral circuitry is no longer necessary, reducing PCB space andimproving system packaging possibilities. XMC1404, Arm® Cortex®-M0 based microcontroller, incorporates dedicated features
to improve motor drive control. A hardware MATH Co-Processor clocked at 96 MHz enhances calculations, including divisionand trigonometric functions commonly used in Field Oriented Control of PMSM. Additionally, XMC1404 inherits most of thehigh-end peripherals found in the XMC4000 family (ARM® Cortex®-M4), including PWM timers -CCU8 and CCU4-, positioninterface (POSIF) or serial communication modules including CAN, ensuring best in class control. The integrated 3-phase gate
driver (6EDL7141) includes a configurable gate drive sink and source currents up to 1.5 A, enabling the ability to drive a wide
range of MOSFETs effectively to minimize losses and increase efficiency. Thanks to built-in high and low side charge pumps, it
has adjustable gate driver supply voltage settings between 7 V, 10 V, 12 V, and 15 V, even at low battery voltage. The 6EDL7141
also has dynamically adjustable gate driver parameters to enable control of the slew rate to minimize system EMI and voltage
overshoots. In addition, with a full suite of system protection features such as OCP, UVLO, over-temperature, and locked rotor
detection, this dedicated motor controller will increase reliability and robustness in severe operating fault conditions.

Digital isolators

Fully programmable motor controller combining microcontroller and gate driver IC

IGBT discretes andsilicon power diodes

MOTIX™ IMD700A/IMD701A integrated controller

15-300 V MOSFETs

Applications

Solutions

MOTIX™ motor control ICs

Current sensing
BEMF/others sensing

Key benefits– Integrated power supplies– Adjustable slew rate
– Programmable gate drive parameters– 3x current shunt amplifier– Complete dedicated motor control protection suite– Reduced external component count and PCB area
– Lower voltage overshoots and EMI reduction– Maximum flexibility to use different inverter MOSFETs– Highly accurate integrated current sense saves external components– Improved reliability and fault detection

Package

Voltage [V]DVDD regulator output [V]IMD700A-Q064X128-AA

PG-VQFN-64-8 9 x 9 mm

5.5 – 60 V

3.3 V

IMD701A-Q064X128-AA

PG-VQFN-64-8 9 x 9 mm

5.5 – 60 V

5.0 V

Sensors

Part number

WBG semiconductors

Key features

Powermanagement ICs

Features and benefits

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439Solutions

MOTIX™ motor control ICs

Applications

MOTIX™ single half-bridge IC

15-300 V MOSFETs

Protected high-current half-bridge for industrial applications

Gate-driver ICs

500-950 V MOSFETs

MOTIX™ single half-bridge IC provides a complete, low-ohmic protected half-bridge in a single package (typical path
resistance at 25°C down to 10 mΩ). It can also be combined with an additional MOTIX™ single half-bridge IC to createan H-bridge or three-phase bridge. It can switch high-frequency PWM while providing overcurrent, overvoltage, andovertemperature protection. The MOTIX™ single half-bridge ICs family offers cost-optimized, scalable solutions forprotected high-current PWM motor drives with very restrictive board space. The P-channel high-side switch eliminates
the need for a charge pump, thus minimizing EMI. The latest addition to the single half-bridge IC family is the IFX007T,
optimized for industrial applications.

Application example for high-current PWM motor drives

I/O

WO

Reset
Microcontroller V
DD

RO

Digital isolators

Reverse polarity
protection
VS

I

VSS

IGBT discretes andsilicon power diodes

Voltage
Q regulator
D

IN
IS
SR

VS

OUT

OUT

M

GND

GND

INH
IN
IS
SR

USB-C controllers
and peripherals

INH

IFX007T
VS

Microcontrollers

IFX007T

Intelligent powerswitches and modules

GND

I/O I/O I/O I/O I/OHigh-current H-bridgeProtection features

Diagnostic features– Low quiescent current– Capable for high PWM frequency– Logic level input– Adjustable slew rate
– Cross-current protection– Overtemperature shutdown– Overvoltage shutdown– Undervoltage– Overcurrent– Overtemperature– Overvoltage– Current sense and status

IFX007T

Operating range[V]
5.5 ... 40.0

RDS(on) path(typ.)[ mΩ]
10.0

ID(lim) (typ.)[A]
70

Iq (typ.)[µA]
7

Switch time (typ.)
[µs]
0.25

Diagnosis
OT, OC, CS

Protection
UV, OT, OC

Package

Qualification

PG-TO-263-7 JESD471

Sensors

Product
numberWBG semiconductors

Basic features

Powermanagement ICs

Features

Click here to learn more:

CS = Current sense

OC = Overcurrent

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OT = Overtemperature

UV = Undervoltage

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Solutions

MOTIX™ motor control ICs

500-950 V MOSFETs

The BLDC motor control shield is a high-current motor control board compatible with Arduino and Infineon’s XMC4700
boot kit. It is equipped with three smart MOTIX™ IFX007T single half-bridge ICs. The BLDC motor control shield can
drive one BLDC motor. Alternatively, it can be used to drive one or two bidirectional DC motors (H-bridge configuration,cascaded to support second motor) or up to three unidirectional DC motors (half-bridge configuration). The implemented MOTIX™ IFX007T half-bridges can be controlled by a PWM via the IN-pin.

15-300 V MOSFETs

Applications

BLDC motor control shield with IFX007T for Arduino

Features
Key features

Digital isolators

Gate-driver ICs– Capable of high-frequency PWM, e.g., 30 kHz– Adjustable slew rates for optimized EMI by changing external resistor– Driver circuit with logic level inputs– Diagnosis with current sense

IGBT discretes andsilicon power diodes

Target applications‒ Brushed DC motor control up to 250 W continuous load
‒ 24 V nominal input voltage (max. 6 - 40 V)‒ Average motor current 30 A restricted due to PCB (IFX007T current limitation at 55 A min.)Intelligent powerswitches and modules

BLDC-SHIELD_IFX007T

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

BLDC motor control with MOTIX™ IFX007T
single half-brigde IC.
Infineon's shields for Arduino are compatible withmicrocontroller boards using the Arduino-compatible
form factor, e.g., Infineon's XMC™ microcontroller kits.
Ordering code: BLDCSHIELDIFX007TTOBO1

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Solutions

MOTIX™ motor control ICs

Charge pump

Number of half-bridges

EN

Number of half-bridges

2-fold3-fold4-fold3-fold4-fold6-fold8-fold10-fold

12-fold

TLE4207G
DSO-14

TLE94003EP
TSDSO-14

TLE94004EP
TSDSO-14

TLE94103EP
TSDSO-14

TLE94104EP
TSDSO-14

TLE94106ES
TSDSO-24

TLE94108ES
TSDSO-24

TLE94110ES
TSDSO-24

TLE94112ES
TSDSO-24

Bias andmonitor

PWM
generator

SCLK
SDI

Overload
detection

Logic control andlatch SPI interface

High-side
driverOvertemp.
detection

SDO

TLE8444SL
SSOP-24

12x
driverstage

Open-loaddetection

CSN

Temperature
sensorPower driver
Open-loaddetection
Overload
detection

Error
detection

Low-side
driverOvertemp.
detection

OUT1
OUT2
OUT3
OUT4
OUT5
OUT6
OUT7
OUT8
OUT9
OUT10
OUT11
OUT12

GND GND GND GND– Three-, four-, six-, eight-, ten-, and twelve-fold half-bridges with integrated output stages and
PWM– 16-bit SPI or direct inputs for control and diagnosis– Voltage supply range: 5.5– 20 V
– Variable driving schemes for up to 11 motors

Config.

IL(NOM)[A]

IL(lim)
[A]

Iq
[μA]

VS(OP)[V]

Protection

Diagnostic
interface

Highlights

VCE(sat)/
RDS(on)[mΩ]

Package

850/switch

TSDSO-14-

TLE94003EP 3 x half-bridge

3 x 0.30 3 x 0.90 0.6

5.5 to 20 OC, OT, VS, UV/OV

Error flag

TLE94xyz family concept + small package

TLE94103EP 3 x half-bridge

3 x 0.30 3 x 0.90 0.6

5.5 to 20 OC, OT, OL, VS, UV/OV 16-bit SPI

TLE94xyz family concept + small package

TSDSO-14-

TLE94004EP 4 x half-bridge

4 x 0.30 4 x 0.90 0.6

5.5 to 20 OC, OT, VS, UV/OV

Error flag

TLE94xyz family concept + small package

TSDSO-14-

TLE94104EP 4 x half-bridge

4 x 0.30 4 x 0.90 0.6

5.5 to 20 OC, OT, OL, VS, UV/OV 16-bit SPI

TLE94xyz family concept + small package

TSDSO-14-

TLE94106ES 6 x half-bridge

6 x 0.30 6 x 0.90 0.6

5.5 to 20 OC, OT, OL, VS, UV/OV 16-bit SPI

TLE94xyz family concept + backwards compatible to
TLE84106EL

TSDSO-24

TLE94108ES 8 x half-bridge

8 x 0.30 8 x 0.90 0.6

5.5 to 20 OC, OT, OL, VS, UV/OV 16-bit SPI

TLE94xyz family concept

TDSO-24

TLE94110ES 10 x half-bridge 10 x
0.30

10 x
0.90

0.6

5.5 to 20 OC, OT, OL, VS, UV/OV 16-bit SPI

TLE94xyz family concept + backwards compatible to TLE84110

TDSO-24

TLE94112ES 12 x half-bridge 12 x
0.30

12 x
0.90

0.6

5.5 to 20 OC, OT, OL, VS, UV/OV 16-bit SPI

TLE94xyz family concept + 12 outputs in one package

TDSO-24

8 to 18

Error detection

DSO-14

TLE4207G

2 x half-bridge

2 x 0.80 2 x 1.50 20

OC, OT, VS, UV/OVStatus flag

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SupportProduct
name

WBG semiconductors

Key features and benefits

Key applications‒ 12 V automotive and industrial applications‒ Flap motors in HVAC systems‒ Mirror adjustment and fold
‒ Small DC motors (≤ 0.9 A/output)‒ Bistable relays‒ Bipolar stepper motors in full-step andhalf-step mode

Sensors

Features and benefits

IGBT discretes andsilicon power diodes

Undervoltage andovervoltage monitor

SPI

InterfaceIntelligent powerswitches and modules

VS2

Microcontrollers

Directinterface

VS1

12-fold
half-bridge driver
SPI interface

USB-C controllers
and peripherals

VDD

Microcontroller

Digital isolators

Block diagram MOTIX™ TLE94112ES

Power
management ICs

Infineon’s portfolio of MOTIX™ multi half-bridge ICs

500-950 V MOSFETs

The MOTIX™ TLE94xyz products are protected half-bridge drivers designed for 12 V motion control applications suchas small DC motors for heating, ventilation, and air conditioning (HVAC), as well as automotive mirror adjustment andfold. The family offers two-, three-, four-, six-, eight-, ten-, and twelve-fold integrated half-bridge drivers. All devices
can drive DC motor loads up to 0.9 A per output, or the outputs can be used stand-alone or combined with increasing
driving capability up to 3.6 A. They diagnose short circuits, open loads, power supply failures, and overtemperature foreach half-bridge to ensure safe operation in HVAC or other systems. The TLE94xyz offers enhanced EMC performance,
which combined with the low quiescent current and a small package, makes the product attractive for a wide rangeof 12 V automotive and industrial applications. In addition to TLE94xyz, Infineon’s multi half-bridge offerings include adual-half-bridge driver, TLE4207G.

Gate-driver ICs

Extensive offering ranging from two-fold half-bridge ICs to
twelve-fold half-bridge ICs

15-300 V MOSFETs

Applications

MOTIX™ multi half-bridge ICs

442

Solutions

MOTIX™ motor control ICs

Applications

DC motor control HAT with MOTIX™ TLE94112ES

15-300 V MOSFETs

Complies with Raspberry Pi HAT specification

500-950 V MOSFETs

The Infineon motor control HAT with MOTIX™ TLE94112ES complies with Raspberry Pi HAT specifications and provides
you with a unique evaluation experience. It is equipped with a 12-fold half-bridge driver TLE94112ES and comes with aready-to-use software library. The HAT is also equipped with an Infineon TLS4125D0EP V50, a synchronous step-down
converter, which can power the Raspberry Pi.

Key features

Benefits– Twelve half-bridge power outputs, 0.9 A each (combinable to up to 3.6 A)– Wide input voltage range of 5.5 to 20 V
– Powering of Raspberry Pi by TLS4125D0EP V50– Reverse polarity protection– Driver is protected against overtemperature, overcurrent, overvoltage,– Compact design for multi-motor applications– Quick and easy setup for evaluation and demo applications– Wide range of applications

Gate-driver ICs

Features and benefits

Digital isolators

undervoltage, and enables diagnosis of overcurrent, overvoltage, undervoltage

IGBT discretes andsilicon power diodes– SPI interface with zero clock diagnosis– Enhanced EMC performance– Integrated PWM generator with 3 different frequencies (80 Hz, 100 Hz, 200 Hz)

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

Target applications‒ Automotive motor control: HVAC flap control‒ Multi-motor applications‒ DC motors and voltage controlled bipolar stepper motors

Sensors

WBG semiconductors

Ordering code: TLE94112ESRPIHATTOBO1

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Solutions

MOTIX™ motor control ICs

Applications

MOTIX™ full-bridge ICs

15-300 V MOSFETs

General purpose 6 A H-bridges

Gate-driver ICs

500-950 V MOSFETs

MOTIX™ IFX9201SG is a general-purpose 6 A H-bridge for industrial applications, home appliance and building
automation, power tools battery management, and medical applications, designed to control small DC motors andinductive loads. The outputs can be pulse-width modulated at frequencies up to 20 kHz, enabling operation above thehuman sonic range through PWM/DIR control. While the signal at the DIR input defines the direction of the DC motor,
the PWM signal controls the duty cycle. The H-bridges switch into chopper current limitation mode for load currents
above the current limitation threshold (8 A typically).

Applications examples

100 µF

Application example H-bridgewith SPI interface

100 nFVS

3.3 or 5 V
Digital supply

IFX9201SG
IGBT discretes andsilicon power diodes

VS < 40 V

Digital isolators

VBat

VSO
OUT1
DIS
PWM
DIR
CSN
SCK
SI
SO

OUT2
< 33 nF

Intelligent powerswitches and modules

MicrocontrollerM< 33 nF

Microcontrollers

GND

Features
Key features

Powermanagement ICs

USB-C controllers
and peripherals– Up to nominal 36 V supply voltage– Short circuit, overtemperature protection, and undervoltage shutdown– Detailed SPI diagnosis or simple error flag
– Simple design with few external components– Small and robust DSO-12-17 (IFX9201SG) and DSO-36-72 (IFX9202ED) packages

IFX9201SG

4.5 to 36 V

Current limit(min.) [A]
6.0

Quiescent current(typ.) [µA]19.0

Operating range[V]
5 to 36

RDS(on) (typ./switch)
[mΩ]
100

Package
PG-DSO-12 (power)

RthJC (max.)[K/W]

WBG semiconductors

Operating voltage

2.0

Sensors

Product number

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Applications

Solutions

MOTIX™ motor control ICs

H-BRIDGE KIT 2GO with MOTIX™ IFX9201SG

15-300 V MOSFETs

Build your DC motor control with the H-bridge Kit 2GO, a ready-to-use evaluation kit. It is fully populated with all electronic components equipped with the H-bridge MOTIX™ IFX9201 combined with the XMC1100 microcontroller basedon Arm® Cortex®-M0 CPU. It is designed for the control of DC motors or other inductive loads up to 6 A or up to 36 V ofsupply.

Key features

Key benefits– Compatible with microcontroller boards using the Arduino form factor, e.g.,– Fast and inexpensive prototyping of stepper motor control– Simple testing of microstepping algorithms– Diagnose pin to allow hardware feedback during development– Overtemperature shutdown with latch behavior and undervoltage shutdown– Capable of high-frequency PWM, e.g., 30 kHz– Adjustable slew rates for optimized EMI by changing external resistor– Driver circuit with logic level inputs– Diagnosis with current sense

IGBT discretes andsilicon power diodesof the power section

Powermanagement ICs

Infineon's XMC™ microcontroller kits

USB-C controllers
and peripherals

Features and benefitsIntelligent powerswitches and modules

The stepper motor control shield from Infineon is one of the first high-current motor control boards compatible with
Arduino and Infineon’s XMC1100 boot kit. The stepper motor control shield can drive the two coils in a stepper motorfeaturing a dual-half-bridge configuration. A STEP signal can control the implemented integrated MOTIX™ IFX9201 halfbridges via the STEP pin. Interfacing to a microcontroller is made easy by the integrated XMC1300 microcontroller that
holds the peripherals to allow high-speed current control. Microstepping of the stepper motor can be achieved using
the internal comparators, while operational amplifiers are installed to adapt the motor current sense signal to themicrocontroller’s input levels.

Microcontrollers

KIT_XMC1300_IFX9201
Stepper motor control shield with MOTIX™ IFX9201SG and XMC1300 for Arduino

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

Target applications‒ DC motor control for industrial applications‒ Home and building automation‒ Power tools battery management‒ Industrial robotic applications‒ Electric toys applications
Ordering code: HBRIDGEKIT2GOTOBO1

Sensors

WBG semiconductors

Target applications‒ Stepper motors up to 5 A phase current‒ 24 V nominal input voltage for the power stage‒ Average motor current 3 A without additionalcooling effort, 5 A possible with proper coolingOrdering code: KITXMC1300IFX9201TOBO1

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Applications

Solutions

MOTIX™ motor control ICs

MOTIX™ motor system ICs (SBC)

15-300 V MOSFETs

Motor system ICs (SBC) for BDC and BLDC motors combine power supply,
communication, and multiple half-bridge MOSFET drivers

500-950 V MOSFETs

MOTIX™motor system ICs (SBC) offer integration and high performance with optimized system cost for DC and BLDC motor control applications. All devices of the motor system IC family feature a low-dropout voltage regulator with an output
current of 250 mA/5 V. The communication interface incorporates a CAN FD transceiver up to 5 Mbit/s according to ISO
11898-2:2016 (including partial networking (PN) option) and/or a LIN transceiver.

4x half-bridges

CAN FD and LIN

1x CAN FD

1x CAN FD

1x LIN

TLE9563-3QX

TLE9564QXIGBT discretes andsilicon power diodes

2x half-bridges

w/o LIN

Intelligent powerswitches and modules

Microcontroller
1x LINPower supply andsystem basis chip
MOSFET

TLE9560-3QX

TLE9561QX

TLE9562QX

TLE9561-3QX

TLE9562-3QX

Motor system ICs (SBC)

Sensor32-bitmotor control SoC

FeaturesFeaturesBenefits– 5 V linear regulator up to 250 mA– CAN FD up to 5 Mbps CAN PN and FD tolerant (“-3” variants)– LIN2.2B/J2602– MOTIX™ TLE9560/1/2: up to 4 half-bridge gate drivers with adaptive MOSFET– PCB savings up to 50 percent due to unique integration approach– Lower switching losses and EMC optimization due to adaptive MOSFET control– Automatic regulation of MOSFET pre-charge currents diminish need for produc-

control up to 100 mA constant gate charge– MOTIX™ TLE9563/4: three-phase gate driver with CSA and adaptive MOSFET

tion MOSFET calibration– VS monitoring in sleep mode activates MOSFET to prevent from ECU damage
when motor is in generator mode

control up to 150 mA constant gate charge

Sensors

WBG semiconductors– Up to 4 high-side switches (with 7 on-resistance) Up to 5 wake inputs– Up to 6 PWM inputs

Microcontrollers

Discretebridge driver

Brushless motor(BLDC)

USB-C controllers
and peripherals

Brushed motor(DC)

Digital isolators

Full-integration
integrated µCPowermanagement ICs

Semi-integration: half-bridge drivers
with power supply and communication

Discrete

Gate-driver ICs

Motor control solutions

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Active reverse
bat. protection

Application diagram MOTIX™ TLE9563/4
for BLDC motor control
Active reverse
bat. protection

SafetyswitchBattery

SafetyswitchBattery
Safetylogic

M

Up to 4 highside switches

Switches

Up to 5wake inputs
SPI

CAN Bus

LIN Bus

WatchdogLED

3 highside switches

Switches

Up to 2wake inputs

Three-phasehalf-bridge
driver+charge pump

M

M

SPI

PWM
TxD, RxD

Microcontroller

LIN Bus

5V

LDO

Current sense
amplifier
SPI

CAN Bus

INT, ROState
machineReset

SensorSingleShunt

SPI
INT, ROState
machine

PWM

Reset

TxD, RxD

LDO

5V

Gate-driver ICs

LED

Up to 4x
half-bridge
driver+charge pump

Microcontroller

Digital isolators

Watchdog

500-950 V MOSFETs

Safety logic
FO from SBC

Sensor15-300 V MOSFETs

Application diagram MOTIX™ TLE9560/1/2
for DC motor control

Applications

Solutions

MOTIX™ motor control ICs

Product table
CAN FDCAN PNLIN

HS switches

PWM input

✓

✓

✓

4

1

2x half-bridges (100 mA const.)

Driver

5 V up to 250 mA

✓

–

–

4

4

4x half-bridges (100 mA const.)

5 V up to 250 mA

✓

✓

–

4

4

4x half-bridges (100 mA const.)

TLE9562QX

5 V up to 250 mA

✓

–

✓

4

2

4x half-bridges (100 mA const.)

TLE9562-3QX

5 V up to 250 mA

✓

✓

✓

4

2

4x half-bridges (100 mA const.)

TLE9563-3QX

5 V up to 250 mA

✓

✓

–

3

6

3x half-bridges (150 mA const.)

TLE9564QX

5 V up to 250 mA

–

–

✓

3

6

3x half-bridges (150 mA const.)

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

TLE9561QX
TLE9561-3QX

IGBT discretes andsilicon power diodes

VCC1
5 V up to 250 mAIntelligent powerswitches and modules

Product variant
TLE9560-3QX

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MOTIX™ motor control ICs

Applications

DC and BLDC motor control shields and evaluation boards with
MOTIX™ TLE9562-3QX and with MOTIX™ TLE9563-3QX

500-950 V MOSFETs

15-300 V MOSFETs

The purpose of these boards is to provide a quick evaluation solution for lab assessments. The evaluation boards
offer a unique two-in-one solution: they can be connected via a UIO stick with the computer to evaluate features via
config wizard (a graphical user interface) which can be found in the Infineon Developer Center. In addition,
the evaluation boards feature an Arduino shield interface for rapid prototyping.

Summary of features BLDC motor control shield with MOTIX™ TLE9563-3QX

Digital isolators

Gate-driver ICs‒ Operating voltage range 5.5-28 V with 5 V compatible logic input‒ Integrated reverse polarity protection with on-board EMC filter‒ Three integrated half-bridges MOSFET (2-in-1 MOSFET package)‒ 5 mΩ low-side current sense‒ High-power RGB LED driven by integrated high-side switches‒ On-board back-EMF detection circuit and connector for Hall-sensor‒ Arduino example codes available

IGBT discretes andsilicon power diodes

Sales product name: BLDC SHIELD_TLE956X
Ordering code: BLDCSHIELDTLE956XTOBO1
Summary of features DC motor control shield with MOTIX™ TLE9562-3QX

Microcontrollers

Intelligent powerswitches and modules‒ Operating voltage range 5.5-28 V with 5 V compatible logic input‒ Integrated reverse polarity protection with on-board EMC filter‒ Four integrated half-bridge MOSFETs (2 in 1 MOSFET package)‒ Easy interfacing of CAN and LIN transceiver‒ Miniaturization/shrink of the PCB area
‒ Arduino example codes available

USB-C controllers
and peripherals

Sales product name: DC SHIELD_TLE956X
Ordering code: DCSHIELDTLE956XTOBO1

Benefits of DC and BLDC motor control shields

Sensors

WBG semiconductors

Powermanagement ICs‒ 2-in-1 board with GUI and Arduino interface for evaluation and rapid prototyping‒ 50 percent reduced internal operating current consumption‒ Simplified and cost efficient ground network‒ Smaller package size for area savings‒ Very low quiescent current in sleep-mode

Click here to learn more:
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448Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules
Microcontrollers

Infineon support for power ICs
Useful links and helpful information

Powermanagement ICs
WBG semiconductors

www.infineon.com/analog-ipolwww.infineon.com/xdp
www.infineon.com/motix
www.infineon.com/madk
www.infineon.com/optireg-linear
www.ifineon.com/optireg-switcher
www.infineon.com/motor-control-ics
www.infineon.com/imotion

Sensorswww.infineon.com/acdc
www.infineon.com/coolset
www.infineon.com/integrated-powerstages
www.infineon.com/digital-controller
www.infineon.com/lighting-ics
www.infineon.com/isofacewww.infineon.com/eicedriver
www.infineon.com/shields-for-arduino
www.infineon.com/ipol

USB-C controllers
and peripherals

Further information, datasheets and documents

www.infineon.com/smps
www.infineon.com/xxxxxxx

www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

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SupportClick here to learn more:Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules
Microcontrollers‒ CoolGaN™ Transistors‒ High-voltage CoolGaN™ Transistors‒ High-voltage CoolGaN™ Drive

Sensors

Silicon carbide (SiC)‒ CoolSiC™ MOSFETs discrete 650 V G1
‒ CoolSiC™ MOSFET discrete 750 V G1
‒ CoolSiC™ Automotive MOSFETs 750 V G1
‒ CoolSiC™ MOSFETs discrete 1200 V G1
‒ CoolSiC™ MOSFETs discrete 1700 V G1
‒ CoolSiC™ MOSFETS discrete 2000 V G1 in TO-247 PLUS-4-HCC package‒ CoolSiC™ MOSFETs discrete 400 V G2
‒ CoolSiC™ MOSFETs discrete 650 V Generation 2‒ CoolSiC™ MOSFET 1200 V G2
‒ CoolSiC™ Schottky diodes‒ CoolSiC™ Schottky diodes 650 V‒ CoolSiC™ Schottky diodes 1200 V‒ CoolSiC™ Schottky diode 2000 V G5
‒ CoolSiC™ diodes product portfolio‒ CoolGaN™ and CoolSiC™ nomenclature

USB-C controllers
and peripherals

Gallium nitride (GaN)

Power
management ICs

Wide-bandgap semiconductors

WBG semiconductors

Wide bandgap semiconductors

Please click here to discover CoolSiC™ hybrid devices.

www.infineon.com/smps
www.infineon.com/xxxxxxx

www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

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www.infineon.com/xxxxxxx

SupportClick here to learn more:Gallium nitride (GaN) and silicon carbide (SiC)

Gate-driver ICs

The key step towards an energy-efficient world is the use of new materials, such as wide-bandgap semiconductors thatallow for greater power efficiency, smaller size, lighter weight, lower overall cost – or all of these together. As the leading
and trusted power supplier, Infineon offers the broadest product and technology portfolio of silicon (Si) and widebandgap (WBG) solutions with more than 40 years of heritage in silicon, and several decades of heritage in wide bandgap
technology development. Infineon’s offering in wide bandgap with CoolGaN™ and CoolSiC™ is complemented by
EiceDRIVER™ gate drivers providing flexibility to implement different system partitioning with the right fit isolation rating.

500-950 V MOSFETs

Wide-bandgap semiconductors

15-300 V MOSFETs

Applications

SolutionsWide-bandgap semiconductors

Intelligent powerswitches and modules
Sensors

WBG semiconductors

Silicon carbide has a significantly higher thermal conductivity compared to silicon. SiC-based MOSFETs are best-suited
for applications requiring high power, high breakdown, high temperature, and are operating at higher frequencies
compared to traditional IGBTs. CoolSiC™ MOSFETs come along with a fast internal freewheeling diode, thus making hardcommutation without additional diode chips possible. Due to its unipolar character, the MOSFETs have low temperaturedependence switching and low conduction losses, especially under partial load conditions. Based on proven, highquality volume manufacturing, Infineon’s CoolSiC™ solutions combine revolutionary technology with benchmark
reliability.

Microcontrollers

CoolSiC™ - revolution to rely on

USB-C controllers
and peripherals

Compared to silicon (Si) MOSFETs, the breakdown field of Infineon’s CoolGaN™ power transistors is ten times higher,
and the electron mobility is double. Both the output charge and gate charge are ten times lower than with Si and thereverse recovery charge is almost zero, which is key to high frequency operations. GaN is well suited for hard-switching,and perfect for soft-switching and resonant topologies, enabling new approaches beyond the capabilities of siliconswitches. CoolGaN™ power transistors from Infineon are based on the markets most robust and performing concept – theenhancement-mode concept - offering fast turn-on and turn-off speed. CoolGaN™ products focus on high performanceand robustness and add significant value to a wide variety of systems across many applications such as AI servers,
telecom, hyperscale data centers, USB-C adapters and chargers, and audio.

Powermanagement ICs

CoolGaN™ – ultimate efficiency and reliability

IGBT discretes andsilicon power diodes

Digital isolators

Recent developments include the acquisition of GaN Systems in late 2023, supporting customers with an expanded
offering and internal dual sourcing via independent manufacturing flows. In addition, the second generation CoolSiC™
is launched with a roll out through 2024 and 2025, extending the lead in performance and reliability via adoption of ourfield proven .XT™ advanced interconnection technology.

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451

Advantages‒ Operational expenses (OPEX)
and capital expenditure (CAPEX)
reduction‒ BOM and overall cost savings

WBG semiconductors

Design benefits‒ High power density, small,and light design‒ High efficiency in resonant circuits‒ New topologies and current
modulation‒ Fast and (near-)lossless switching

Infineon’s high- and low-voltage MOSFETs, gate-driver ICs and digital controllers complement the CoolGaN™ offering tofully exploit the benefits of GaN technology in systems.

Application
profileQRP – quality
requirement profile

Degradation
modelsRel. investigation at
development phase

SupportThe highest quality
The qualification of GaN switches requires a dedicatedapproach, well above existing silicon standards‒ Infineon qualifies GaN devices well beyond
industry standards‒ Application profiles are an integral part of
the qualification process‒ Failure models, based on accelerated test conditions,ensure target lifetime and quality are met‒ Infineon sets the next level of wide bandgap quality

Qualification plan

Releasedproduct

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Sensors

Features‒ Low output charge andgate charge‒ No reverse recovery chargePowermanagement ICs

Compared to the next best silicon alternative, CoolGaN™ enables higher power density and the highest efficiency,
especially in the partial load range, through novel topologies such as the CCM totem-pole PFC stage. GaN transistor
performance features a low reverse recovery charge and excellent dynamic performance in reverse conduction
compared to silicon FET solutions. This characteristic enables more efficient operation at established frequencies andmuch higher frequency operation, improving power density by shrinking the size of passive components. CoolGaN™
enables doubled output power in a given energy storage slot size, freeing up space and realizing higher efficiency
simultaneously. Infineon’s CoolGaN™ comes with industry-leading reliability. During the quality management process,it is not only the device that is thoroughly tested but also its behavior in the application environment. The performanceof CoolGaN™ goes beyond other GaN products in the market.

Microcontrollers

Tailor-made for the highest efficiency and power density in switch-mode power supplies

USB-C controllers
and peripherals

CoolGaN™ TransistorsIntelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

15-300 V MOSFETs

Applications

Solutions

CoolGaN™ Transistors

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452

Solutions

CoolGaN™ Transistors

Applications

CoolGaN™ Transistors – bringing GaN technology to the next level

500-950 V MOSFETs

15-300 V MOSFETs

Infineon’s CoolGaN™ Transistors enable more than 98 percent system efficiency and help customers make theirend products smaller and lighter. Driving enhancement-mode devices requires additional features when choosing
the correct gate driver IC. With the EiceDRIVER™ 1EDx56x3x family, Infineon offers dedicated single-channel
galvanically isolated gate driver ICs, which are a perfect fit for e-mode GaN HEMTs with non-isolated gate (diodeinput characteristic) and low threshold voltage, such as CoolGaN™. However, CoolGaN™ technology does not require
customized ICs, and in many applications, CoolGaN™ can be driven by standard gate drivers when coupled to an RC
interface.

Gate-driver ICs

Complete support of all requirements specific to GaN power transistors operation:‒ Low driving impedance (on-resistance 0.85 Ω source, 0.35 Ω sink)‒ Resistor programmable gate current for steady on-state (typically 10 mA)‒ Programmable negative gate voltage to completely avoid spurious turn-on in half-bridges

CoolGaN™
Transistor

CoolGaN™
Transistor

CoolGaN™
Transistor

CoolGaN™
Transistor

OptiMOS™

OptiMOS™

OptiMOS™

OptiMOS™

CoolGaN™
Transistor

CoolMOS™

Microcontrollers

EMIfilter

1EDF5673K* / 1EDF5673F*
1EDB7275 (HS)1EDN7550 (LS)
1EDS5663H*
or
2EDR7259X

2EDB8259Y
1EDB8275 (HS)1EDN8550 (LS)

LLC
controllerPowermanagement ICs

PFCcontroller

USB-C controllers
and peripherals

2EDB7259K
2EDB8259K

Sensors

WBG semiconductors*Single-channel EiceDRIVER™ ICs dedicated for CoolGaN™ Power Transistor

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LINE

CoolMOS™

Intelligent powerswitches and modules

CoolGaN™
Transistor

SynchronousrectifierResonant LLC

IGBT discretes andsilicon power diodes

Totem pole
Full-bridge PFC

Digital isolators

Block diagram: high-efficiency GaN switched-mode power supply (SMPS)

453

Solutions

CoolGaN™ Transistors

Applications

High-voltage CoolGaN™ Transistors

15-300 V MOSFETs

The highest efficiency and power density with reduced system costs

Gate-driver ICs

500-950 V MOSFETs

The e-mode concept offers fast turn-on and turn-off speed, as well as a better path towards integration. CoolGaN™
Transistors enable simpler and more cost-effective half-bridge topologies. As e-mode based products reach maturity,
CoolGaN™ Transistors are gaining growing prominence thanks to their potential. Infineon manufactures their GaN
devices according to a specific, GaN-tailored qualification process that goes far beyond the standard for silicon powerdevices. CoolGaN™ Transistors are designed for datacom and server SMPS, telecom rectifiers, as well as mobile
chargers and adapters, and can be used as a general switch in many other industrial and consumer applications. It
is the most rugged and reliable solution in the market. The CoolGaN™ portfolio is built around high-performing SMD
packages to fully exploit the benefits of GaN.

Digital isolators

CoolGaN™ Transistors for PFC
CoolGaN™ enables the adoption of simpler half-bridge topologies (including the elimination of the lossy input bridge
rectifier). The result is record efficiency (>99%) with a potential for BOM savings.

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

CoolGaN™ Transistors for resonant topologies‒ In resonant applications, ten times lower Qoss and QG enables high-frequency operations(>1 MHz) at the highest efficiency levels‒ Linear output capacitance leads to 8 to 10 times lower dead time
‒ Devices can be easily paralleled‒ Power density can be pushed even further by optimizing the thermal performance‒ CoolGaN™ enables to push the efficiency forward, thus
enabling high power density e.g., in low-power chargers/adapters

Q1

Q3

Q2

Q4
Q5

Demonstration board
3 kW full-bridge LLC board
GS-EVB-LLC-3KW-GS

USB-C controllers
and peripherals

54V

Power
management ICs

Full-bridge LLC

Q6

WBG semiconductors

Applications
400V‒ Telecom‒ Server‒ AI data centers‒ USB-C adapters and chargers‒ Wireless charging‒ SMPS‒ 50 mΩ CoolGaN™ Transistor in

Sensors

PG-VSON-8

Reference design 500 kHz
high density 3 kW rectifier:REF_3K3W_HFHD_PSU

SupportTotem-pole PFC‒ 35 mΩ CoolGaN™ Transistor
in PG-HSOF-8

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Solutions

CoolGaN™ Drive

Due to the GaN-specific low threshold voltage and the fast-switching transients, a negative-gate drive voltage isrequired in specific applications to avoid spurious turn-on effects. This can be achieved by the well-known RC interface
between the driver and the switch. A few external SMD resistors and capacitors allow for easy adaptation to different
applications (low/medium power, hard/soft switching).

Tx

DH

DH

UVLO
Rx
Logic

INL
ControllogicSHFunctional isolation

INH

ENABLE

Intelligent powerswitches and modules

SLDO

GH

CoolGaN™
DL

UVLO

Tx

SW

Microcontrollers

SLDON

CT

UVLO

VDDI

OUTH

IGBT discretes andsilicon power diodes

VDDH

Digital isolators

The CoolGaN™ Drive is available in typical RDS(on) 2x 140/200/270/500 mΩ in a thermally enhanced 8 x 8 mm QFN-28
package. The built-in driver utilizes an on-chip coreless transformer (CT) technology to achieve level-shifting to thehigh side. Besides, CT technology guarantees excellent robustness even for extremely fast-switching transients above
150 V/ns.

Rx

USB-C controllers
and peripherals

Logic

SL

GNDI

OUTL

GL

SL

Power
management ICs

VDDL

GH

WBG semiconductors

The CoolGaN™ Drive is also available in typical RDS(on) 2x 500 mΩ, in a 6x8 mm TFLGA-27 package. The built-in halfbridge driver integrates bootstrap diode to configure the high-side gate drive supply easily. With an applicationconfigurable turn-on and turn-off speed, this part can be easily adapted in low power SMPS and motor driverapplications aiming for high-power density design.
OUT

DH
DH

VB
Sensors

UVLO

500-950 V MOSFETs

The CoolGaN™ Drive combines a half-bridge power stage consisting of two CoolGaN™ Transistors and a dedicatedgate driver IC. It is thus ideally suited to support the design of compact appliances in the low-to-medium power area.
Infineon’s CoolGaN™ power switches provide a very robust gate structure. When driven by a continuous gate current ofa few mA in the on-state, a minimum on-resistance RDS(on) is always guaranteed.

Gate-driver ICs

Ease of use with integrated drivers for highest efficiency and power density

15-300 V MOSFETs

Applications

High-voltage CoolGaN™ Drive

Logic
GH
SH
Logic
level shiftdelay match

BS diodeSW

Support

INH

CoolGaN™
DL

UVLO

VDD

GL

Logic
INL

SL
COM

OUTL

GL

SL

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455

CoolGaN™ Drive 600 V - 700 V
Package

QFN 5x6
single switch
CS, OCP, OTP

QFN 6x8
single switch
CS, OCP, OTP

IGI650F5050A1L*

IGI70N500A2PS*

IGI70N500A2MS*

IGI60L5050B1M*

270 mΩ

IGI650F2727A1L*

IGI70N270A2PS*

IGI70N270A2MS*

IGI60L2727B1M*

200 mΩ

IGI650F2020A1L*

IGI70N200A2PS*

IGI70N200A2MS*

IGI65D2020A3MS*

140 mΩ

IGI650F1414A1L*

IGI70N140A2PS*

IGI70N140A2MS*

IGI65D1414A3MS*

RDS(on),max.

500 mΩ

TOLL
single switch
CS, OCP, OTP

LGA 6x8
QFN 6x8
QFN 8x8
Q-DPAK BSC
half-bridge
half-bridge
half-bridge
half-bridge
integrated
CS, OCP, OTP,
CS, OCP, OTP,
CS, OCP, OTP,
Boostrap diode bootstrap diode bootstrap diode bootstrap diodeQFN 8x8
Half-bridgewith driver

QFN 6x8
half-bridge
No driver

IGI65L3535A2M*

IGI70N070A2MS*

55 mΩ

IGI70N055A2MS*

IGI65L1414A2L*

IGI65L1414A2QC*

IGI65L1010A2L*

IGI65L1010A2QC*
IGI65L0707A2QC*

IGI65N055A2T*

35 mΩ

IGI65N035A2T*

25 mΩ

IGI65N025A2T*

IGI65L0505A2QC*

Gate-driver ICs

IGI70N100A2MS*

70 mΩ

IGI65L2020A2L*

IGI65L1414A2M*

Digital isolators

100 mΩ

IGI60L1414B1M*

IGI65L2727A2M*
IGI65L2020A2M*

500-950 V MOSFETs

350 mΩ

CoolGaN™ Transistors 650 V - 700 V
DFN/PDFN 8x8

450 mΩ

GS-065-004-1-L

315 mΩ

GS-065-004-6-L

260 / 270 mΩ

IGLR65R270D2*
GS-065-006-6-L

200 - 225 mΩ

IGLR65R200D2*
GS-065-008-1-L

165 mΩ

GS-065-008-6-L

140 / 150 mΩ

IGLR65R140D2*
GS-065-011-1-L

IGLD65R140D2*
GS-065-011-2-L

125 mΩ

GS-065-011-6-L

GS-065-011-6-LR

GS-065-014-6-L

GS-065-014-6-LR

GaNPX

TOLL

TOLT

IGT65R140D2*

IGLD65R110D2*

IGLT65R110D2*

IGLD65R080D2*
GS-065-018-2-L

62 / 67 mΩ

GS-065-018-6-LR

GS66506T

45 - 55 mΩ

IGLD65R055D2*
GS-065-030-2-L

GS66508B
GS66508T

GS-065-030-6-LR

GS66516B
GS66516T

25 mΩ

IGLT65R055D2*
IGLT65R045D2*

IGOT65R055D2*
IGOT65R045D2*

IGT65R035D2*
GS-065-030-6-LL
GS-065-045-6-LL*

IGLT65R035D2*
GS-065-030-6-LT
GS-065-045-6-LT

IGOT65R035D2*

IGT65R025D2*

IGLT65R025D2*

IGOT65R025D2*

GS-065-075-6-LL

GS-065-075-6-LTPower
management ICs

17 mΩ

IGT65R055D2*
IGT65R045D2*

Microcontrollers

GS66504B

78 / 80 mΩ

30 - 37 mΩ

Intelligent powerswitches and modules

GS66502B

110 mΩ
95 / 100 mΩ

DSO

IGBT discretes andsilicon power diodes

ThinPAK/PDFN 5x6

USB-C controllers
and peripherals

Package

RDS(on),max.

15-300 V MOSFETs

Applications

Solutions

CoolGaN™ portfolio

PackageTyp. high level
Typ. low level
Propagation(sourcing) output (sinking) output
delay accuracy
resistanceresitance

Input to output isolation
Isolation class

RatingSurge testing

Certification

VIO = 1.5 kVDC

n.a.

n.a.

-6 ns/+7ns

0.85 Ω

1EDF5673F DSO, 16-pin, 150 mil functional

VIO = 1.5 kVDC

n.a.

n.a.

-6 ns/+7ns

0.85 Ω

0.35 Ω

DSO, 16-pin, 300 mil reinforced

VIOTM = 8 kVpk
VISO = 5.7 kVRMS

VISOM > 10 kVpk

EN 62368-1 UL1577-6 ns/+7ns

0.85 Ω

0.35 Ω

1EDS5663H

0.35 Ω

Support

1EDF5673K LGA, 13-pin, 5x5 mm functional

Sensors

Product

WBG semiconductors

EiceDRIVER™ family optimized for high-voltage CoolGaN™ Transistors

Gate driver ICs for GaN transistors
EiceDRIVER™ 2EDi, 1EDB and 1EDN-TDI product families
Input to output isolation
FamilyProduct
2EDR7258X

Package

Isolation class

DSO-14300 milReinforced

DSO-14150 mil

SingleProtection

VISO = 5.7 kVrms
UL 1577
VIOTM = 8 kVpk
VDE 0884-11
VISO = 3.0 kVRMS
UL 1577

DSO-8
150 mil

SingleProtection

VISO = 3 kVrms
UL 1577

SOT23
6-pin

Non-Isolated

n.a.

1EDN71X6G

VSON-10

Non-Isolated

1EDN71X6U

TSNP-7

2EDR8259X
2EDi
2EDB7259Y
2EDB8259Y
1EDB7275F

1EDB

1EDB8275F

1EDN-TDI

1EDN-TDI

Rating

1EDN7550B
1EDN8550B

ActiveClamping

Separate
Source/Sink
Output

38 ns

Yes

No

300 V/ns

45 ns

Yes

Yes

5A/9A

n.a.

45 ns

No

Yes

0.5 A / 0.5 A,
1 A / 1 A 1.5 A/ 1.5 A, 2 A
/2A

n.a.

125 ns /105 ns / 75 ns/ 55 ns

Yes

Yes

Output UVLO

Output peaksource/sinkcurrent

CMTI (min.)

Propagation
dealy (typ.)

4V

5A/9A

150 V/ns

5A/9A

8V
4V
8V
4V
8V
4V
8V

n.a.

4V

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456

Applications

Solutions

CoolGaN™ portfolio

CoolGaN™ Transistors 100 V

2.4 mΩ

PQFN 3x5
Bottom-side cooled
IGC033S101*

PQFN 3x5
Dual-side cooled

PQFN 3x3
Bottom-side cooled

PQFN 3x3
Dual-side cooled

ULGA
15-300 V MOSFETs

Package
RDS(on),max.

IGC033S10S1*
GS61008P GS61008T

7 mΩ
IGB110S101*

8 mΩ

IGB110S10S1*
GS61004B

500-950 V MOSFETs

16 mΩ

PQFN 3x5
Dual-side cooled

1.4 mΩ

IGC01906S1*

Digital isolators

Package
RDS(on),max.

Gate-driver ICs

CoolGaN™ Transistors 60 V

PQFN 3x5
Dual-side cooled

1.9 mΩ

IGC025S08S1*

Intelligent powerswitches and modules

Package
RDS(on),max.

IGBT discretes andsilicon power diodes

CoolGaN™ Transistors 80 V

PQFN 3x5
Dual-side cooled

2.8 mΩ

IGC037S12S1*

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Package
RDS(on),max.

Microcontrollers

CoolGaN™ Transistors 120 V

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Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules

Silicon carbide

Microcontrollers

Silicon Carbide CoolSiC™ solutions are the next essential step
towards an energy-smart world.

Powermanagement ICs

USB-C controllers
and peripherals

Silicon carbide (SiC) devices belong to the so-called wide bandgap semiconductor group, which offers many attractive
characteristics for high voltage power semiconductors compared to commonly used silicon (Si). In particular, themuch higher breakdown field strength and thermal conductivity of silicon carbide allow developing devices which by
far outperform the corresponding silicon-based ones, and enable efficiency levels unattainable otherwise. Infineon’s
portfolio of SiC devices covers 600 to 2000 V Schottky diodes as well as the revolutionary CoolSiC™ MOSFETs 400 V,
650 V, 750 V, 1200 V, 1700 V, and 2000 V.

Sensors

WBG semiconductors

EiceDRIVER™ SiC MOSFET gate-driver ICs are well-suited to drive SiC MOSFETs, especially Infineon’s ultrafast switching
CoolSiC™ SiC MOSFETs. These gate drivers incorporate the most important key features and parameters for driving SiC,
such as tight propagation delay matching, precise input filters, wide output-side supply range, negative gate voltage
capability, active Miller clamp, DESAT protection, and extended CMTI capability.

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Solutions

CoolSiC™ MOSFETs

Applications

CoolSiC™ MOSFETs discrete 650 V G1

15-300 V MOSFETs

Delivering reliable and cost-effective top performance

Leveraging SiC’s material properties

30

25
20
15
10
5

Gate-driver ICs

25
20

IGBT discretes andsilicon power diodes

Ease of use

35

30

RDS(on)*Qoss [mΩ * µC]

Dynamic behavior

RDS(on)*Qrr [mΩ * µC]

Quality

35

Digital isolators

Robustness for continuous hard commutation topologies

Robustness

Reliability

Performance

Static behavior

500-950 V MOSFETs

Silicon carbide physical characteristics, from wide bandgap to electron mobility and thermal conductivity, provide thebasis to engineer high-performance semiconductor technologies and products. The CoolSiC™ MOSFETs from Infineon
maximize the advantages of silicon carbide, offering a high-performance product that also meets power electronics design
requirements, like reliability and ease of use. As per performance, the CoolSiC™ MOSFETs show low RDS(on) dependency withtemperature and low switching losses. The reliability is built on technological strengths and on flawless quality processes.
Some aspects of Infineon’s SiC technology, like superior gate oxide reliability, excellent thermal behavior, advanced
avalanche ruggedness and short circuit capabilities, contribute to the robustness of the device. Infineon’s benchmark
quality was further improved for silicon carbide, with an application-focused qualification scope exceeding standards,
complemented by SiC-specific screening measures. Additional unique features, like 0 V turn-off VGS, wide VGS range, and theuse of silicon MOSFET drivers and driving schemas make CoolSiC™ MOSFETs 650 V easy to integrate and use.

15
10

0

5
0

CoolMOS™ CFD7*

CoolSiC™ 650 V

CoolMOS™ CFD7*

CoolSiC™ 650 VIntelligent powerswitches and modules* Best CoolMOS™ SJ MOSFET reference in the market

Microcontrollers

CoolSiC™ MOSFETs can enable streamlined and cost-optimized system designs with fewer components, weightand size, reaching high energy efficiency and power density. For instance, the CoolSiC™ MOSFETs boast a low levelof Qrr, roughly 80 percent less of the best CoolMOS™ reference in the market, the CoolMOS™ CFD7. This ensures
the robustness of the body diode, making the CoolSiC™ MOSFETs suitable for topologies with continuous hardcommutation, like the high-efficiency totem-pole PFC, a topology that enables > 99 percent of efficiency.

Totem pole
Full-bridge PFC

SynchronousrectifierResonant LLC

600 V CoolMOS™ S7

CoolSiC™ 650 V

CoolSiC™ 650 V

OptiMOS™

OptiMOS™

CoolSiC™ 650 V

600 V CoolMOS™ S7

CoolSiC™ 650 V

CoolSiC™ 650 V

OptiMOS™

OptiMOS™

Power
management ICs

CoolSiC™ 650 V

EMI
filterWBG semiconductors

AC
LINE

USB-C controllers
and peripherals

High-efficiency CoolSiC™ totem-pole PFC in server SMPS (switched-mode power supply)

2x EiceDRIVER™
2EDB8259K
2EDB7259K

2x EiceDRIVER™
2EDR9259X
2EDR9258X

EiceDRIVER™
2EDB8259F
2EDB8259Y

LLC
controller

Sensors

EiceDRIVER™
2EDB9259Y

Support

PFC
controller

CoolSiC™ MOSFET 650 V G1
RDS(on) max.
[ mΩ]RDS(on) typ.
[ mΩ]TO-247 4-pin

TO-247

D2PAK-7

TOLL

13.6

9

30/34

22/27

IMZA65R027M1H

IMW65R027M1H

IMBG65R009M1H
IMBG65R022M1H

IMT65R022M1H

42

30

IMZA65R030M1H

IMW65R030M1H

IMBG65R030M1H

IMT65R030M1H

50

39

IMZA65R039M1H

IMW65R039M1H

IMBG65R039M1H

IMT65R039M1H

64

48

IMZA65R048M1H

IMW65R048M1H

IMBG65R048M1H

IMT65R048M1H

74

57

IMZA65R057M1H

IMW65R057M1H

IMBG65R057M1H

IMT65R057M1H

94

72

IMZA65R072M1H

IMW65R072M1H

IMBG65R072M1H

IMT65R072M1H

111

83

IMZA65R083M1H

IMW65R083M1H

IMBG65R083M1H

IMT65R083M1H

141

107

IMZA65R107M1H

IMW65R107M1H

IMBG65R107M1H

IMT65R107M1H

217

163

IMBG65R163M1H

IMT65R163M1H

346

260

IMBG65R260M1H

IMT65R260M1H

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Solutions

CoolSiC™ MOSFETs

Key benefits– Cosmic ray ruggedness– Intrinsic diode with low reverse recovery charge– Low device capacitance– Temperature independent switching losses– Infineon die attach technology– High reliability and improved system lifetime– Superior efficiency in hard and soft switching– Enables higher switching frequency– Robust against parasitic turn-on– Reduced system complexity– Excellent thermal dissipation

Microcontrollers

CoolSiC™ 750 V is the most balanced technology combining ease of use,switching efficiency, and superior thermal performances.
FoMs of competitor parts based on publicly available datasheets, reference products:
SCT011H753AG, NVH4L018N075SC1, SCT4013DR, AOM015V75X2Q
QOSS @ 500 V x RDS(on)max.

USB-C controllers
and peripherals

Increased efficiency
in the application through reduced
dead-time and reduced circulating current
in resonant topologies (e.g LLC)

Enables unipolar driving
No need for negative off state voltages
simpler and cheaper driving circuitPowermanagement ICs

Reduced switching losses
in hard switched topologies

QGD, @ 500 V
QGS @ Vth, typ

EOSS @ 500 V x RDS(on)max.

Increased power density,
more power for same
package footprint

Egate x RDS(on)max.

RDS(on), max.
750 V CoolSiC™ G1

WBG semiconductors

Increased light load efficiency
in soft switching topologies
Enables usage of gate drivers with lower
current capability for same switching speed

Rth,(j – c), max

Competitor 2Competitor 1

Competitor 3

500-950 V MOSFETs
Intelligent powerswitches and modules

Key features

IGBT discretes andsilicon power diodes

Features and benefits

Gate-driver ICs

Infineon’s CoolSiC™ MOSFETs 750 V extends the product family of CoolSiC™ MOSFETs 650 V G1, offering customers
granularity in selecting an optimized solution in price and performance for their designs, with typical RDS(on) ranging
from 8 to 140 mΩ. It addresses especially solid-state circuit breakers, EV charging, solar inverter, servers, and AI PSU
where topologies like Totem-pole with CCM and TCM modulation, HERIC, Active Neutral Point Clamp (ANPC), ViennaRectifier, Dual Active Bridge (DAB), Phase-Shifted full-bridge (PSFB), LLC and CLLC are used. The 750 V G1 best-in-classrobustness to parasitic turn enables minimizing switching losses both with unipolar (i.e., -VGS(off)= 0 V) and bipolar(i.e., VGS(off)< 0 V) gate driving. Moreover, the low QG and QOSS make it suitable for ZVS topologies operating at highfrequencies. Finally, the higher breakdown voltage enhances cosmic radiation ruggedness and gives more room toincrease the DC-link voltage. CoolSiC™ MOSFET 750 V is available in the SMD top-side cooled Q-DPAK package, enabling
increased power density by more efficient use of PCB space. The Kelvin-source connection and lower parasitic source
inductance help reduce switching losses at high current. It improves heat dissipation, consequently reduces size andcost as well as extends system lifetime, creating the highest value for the customers.

Digital isolators

Delivering enhanced robustness and reliability

15-300 V MOSFETs

Applications

CoolSiC™ MOSFET discrete 750 V G1

Competitor 4

Sensors

The CoolSiC™ MOSFETs 750 V G1 is fully compatible with negative off state voltages
and 15 V on state voltage for a seamless dual sourcing
CoolSiC™ MOSFET 750 V G1: Normalized RDS(on) vs. VGS
5.0

Support4.5

Normalized RDS(on)4.0Best trade off between
performance and reliability

3.5

15 V driving results in an RDS(on)Increase < 10 percent at 125° C

3.0
2.5

175° C

2.0

125° C

1.5

25° C

1.0
0.5
10

11

12

13

14

15

16

17

18

19

20

VGS[V]CoolSiC™ MOSFET 750 V G1
RDS(on) max.
[ mΩ]

Q-DPAK TSC

TO-247 4-pin

140

IMDQ75R140M1H

IMZA75R140M1H*

90

IMDQ75R090M1H*

IMZA75R090M1H*

60

IMDQ75R060M1H*

IMZA75R060M1H*

40

IMDQ75R040M1H

IMZA75R040M1H*

27

IMDQ75R027M1H*

IMZA75R027M1H*

20

IMDQ75R020M1H*

IMZA75R020M1H*

16

IMDQ75R016M1H

IMZA75R016M1H*

8

IMDQ75R008M1H

IMZA75R008M1H*

Click here to learn more:
www.infineon.com/coolsic-mosfet-discretes
www.infineon.com/sic

www.infineon.com/sic-diodes
www.infineon.com/coolsic-diodes

www.infineon.com/coolsic-gen2
www.infineon.com/SiCgd
460

Solutions

CoolSiC™ MOSFETs

Applications

CoolSiC™ Automotive MOSFETs 750 V G1

15-300 V MOSFETs

Smaller, lighter, and more efficient solutions

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

Infineon’s CoolSiC™ Automotive MOSFETs 750 V G1 represents a pioneering response to the evolving trends withinelectric vehicles (EVs) and high-voltage applications, with a keen focus on addressing critical facets of onboard
chargers (OBCs) and related systems. Optimized for a wide array of topologies, these MOSFETs empower engineers to
revolutionize onboard charger designs, aligning seamlessly with trends such as higher power density, bi-directionality,
and increased demand for efficiency. The devices offer a granular portfolio with typical RDS(on) values ranging from 8 to
140 mΩ at 25°C, showcasing their versatility across diverse applications. Leveraging the intrinsic advantages of siliconcarbide (SiC) technology, the CoolSiC™ 750 V MOSFETs exhibit lower RDS(on) temperature coefficient, reduced hardswitching losses, and increased light-load efficiency. This, combined with their robustness against parasitic turn-on(PTO) and adherence to AEC Q101 automotive standards, underscores their unwavering commitment to reliability andlongevity in safety-critical automotive applications. These MOSFETs stand as a testament to pioneering advancements
in SiC-based semiconductor technology, tailored to meet the ever-evolving needs of automotive power applications.

Key benefits– Highly robust 750 V technology– Best-in-class RDS(on) x QG
– Excellent Ron x Qoss and Ron x QG
– Low Crss/Ciss together and high VGS(th)– 100% avalanche tested– Infineon die attach technology– Cutting-edge top-side-cooled package– Superior efficiency in hard switching– Enables higher switching frequency– Higher reliability– Can withstand bus voltages beyond 500 V– Robustness against parasitic turn
– Unipolar driving– Best-in-class thermal dissipation

750 V CoolSiC™ G1Resonant LLC (FB)

750 V CoolSiC™ G1

750 V CoolSiC™ G1

Microcontrollers

Interleaved CCM Totem Pole PFCIntelligent powerswitches and modules

Key features

IGBT discretes andsilicon power diodes

Features and benefits

750 V CoolSiC™ G1

650 V CoolMOS™
CFD7A

EMI
filter
750 V CoolSiC™ G1

750 V CoolSiC™ G1

750 V CoolSiC™ G1

USB-C controllers
and peripherals

AC
Line

750 V CoolSiC™ G1

Microcontroller
PFC
controller

EiceDRIVER™
1EDB9275F
EiceDRIVER™
1EDB9275F

EiceDRIVER™
1EDB9275F
EiceDRIVER™
1EDB9275F

EiceDRIVER™
1EDB9275F

Power
management ICs

650 V CoolMOS™
CFD7A

EiceDRIVER™
1EDB9275F
EiceDRIVER™
1EDB9275F

EiceDRIVER™
1EDB9275F

WBG semiconductors

EiceDRIVER™
2EDF7275F

SupportSensors

Infineon’s innovative top-side cooled Q-DPAK package, housing the CoolSiC™ Automotive MOSFETs 750 V G1, enables
increased power density by better use of PCB space. The package’s Kelvin-source connection and lower parasitic
source inductance reduce switching losses at high currents, extending the system lifetime by shrinking the device andboard temperature. Additionally, it allows for flexible PCB layout, efficient heat dissipation, and ultimately delivers
more power from smaller enclosures. This advantage reduces manufacturing effort and costs, making electric vehicles
a more attractive proposition for consumers.

CoolSiC™ Automotive MOSFETs 750 V G1
RDS(on) max.
[ mΩ]

Q-DPAKD2PAK 7-pin
TO-263 7-pin

TO-247-4 pin

8

AIMDQ75R008M1H

AIMBG75R008M1H

AIMZA75R008M1H

16

AIMDQ75R016M1H

AIMBG75R016M1H

AIMZA75R016M1H

20

AIMDQ75R020M1H

AIMBG75R020M1H

AIMZA75R020M1H

27

AIMDQ75R027M1H

AIMBG75R027M1H

AIMZA75R027M1H

40

AIMDQ75R040M1H

AIMBG75R040M1H

AIMZA75R040M1H

60

AIMDQ75R060M1H

AIMBG75R060M1H

AIMZA75R060M1H

90

AIMDQ75R090M1H

AIMBG75R090M1H

AIMZA75R090M1H

140

AIMDQ75R140M1H

AIMBG75R140M1H

AIMZA75R140M1H

Click here to learn more:
www.infineon.com/coolsic-mosfet-discretes
www.infineon.com/sic

www.infineon.com/sic-diodes
www.infineon.com/coolsic-diodes

www.infineon.com/coolsic-gen2
www.infineon.com/SiCgd
461

Solutions

CoolSiC™ MOSFETs

Applications

CoolSiC™ MOSFETs discrete 1200 V G1

15-300 V MOSFETs

Infineon’s CoolSiC™ technology enables radically new product designs

Gate-driver ICs

500-950 V MOSFETs

Silicon carbide (SiC) opens up new degrees of freedom for designers to harness unseen levels of efficiency andsystem flexibility. Compared to traditional silicon-based switches like IGBTs and MOSFETs, SiC MOSFETs offer many
advantages. These include the low switching losses, the very low reverse recovery losses of the internal commutationproof body diode, temperature-independent low switching losses, and threshold-free on-state characteristics. Basedon volume experience and compatibility know-how, Infineon presents the revolutionary CoolSiC™ technology whichenables radically new product designs with high performance and high reliability. CoolSiC™ MOSFET products aretargeted for automotive, photovoltaic inverters, battery charging, EV-charging, industrial drives, UPS, SMPS, andenergy storage.

AC/DC

Digital isolators

Power management
DC/DC

3-phaseinverter

Statusindication
XMC
USB, Serial microcontroller
COM
Maintenanceinterface

IGBT discretes andsilicon power diodes

Gate driver

M

Current sensing

Position sensing

Microcontrollers

Hall & GMR
sensors

Intelligent powerswitches and modules

Current sensing

Key benefits– Very low switching losses– Superior gate-oxide reliability– Threshold-free on-state characteristic– Wide gate-source voltage range– Benchmark gate threshold voltage, VGS(th) = 4.5 V– Fully controllable dV/dt– Commutation robust body diode, ready for synchronous rectification– Best-in-class system performance– Efficiency improvement and reduced cooling effort– Longer lifetime and higher reliability– Enables higher frequency operation, allowing the increase in power density– Reduction in system cost
– Ease of use

Sensors

WBG semiconductors

Powermanagement ICs

Key features

USB-C controllers
and peripherals

Features and benefits

Click here to learn more:
www.infineon.com/sic-diodes
www.infineon.com/coolsic-diodes

www.infineon.com/coolsic-gen2
www.infineon.com/SiCgd

Supportwww.infineon.com/coolsic-mosfet-discretes
www.infineon.com/sic462

Applications

Solutions

CoolSiC™ MOSFETs

15-300 V MOSFETs

The TO-247 4-pin package contains an additional connection to the source (Kelvin connection) used as a reference
potential for the gate driving voltage, thereby eliminating the effect of voltage drops over the source inductance.
The result is even lower switching losses than for the TO-247 3-pin version, especially at higher currents and higher
switching frequencies.

TO-247

TO-247-4

D²PAK 7-pin
TO-263 7-pin

Gate-driver ICs for CoolSiC™

7 mΩ

IMW120R007M1H

IMZA120R007M1H

14 mΩ

IMW120R014M1H

IMZA120R014M1H

20 mΩ

IMW120R020M1H

IMZA120R020M1H

IMW120R030M1H

IMZ120R030M1H
IMZA120R030M1H

40/45 mΩ

IMW120R040M1H

IMZA120R040M1H

IMBG120R045M1H

60 mΩ

IMW120R060M1H

IMZ120R060M1H

IMBG120R060M1H

30 mΩ

IMBG120R030M1H

90 mΩ

IMW120R090M1H

IMZ120R090M1H

IMBG120R090M1H

140 mΩ

IMW120R140M1H

IMZ120R140M1H

IMBG120R140M1H

IMW120R220M1H

IMZ120R220M1H

IMBG120R220M1H

IMW120R350M1H

IMZ120R350M1H

IMBG120R350M1H

EiceDRIVERTM
Enhanced:
1ED3322MC12N
1ED3491MC12M
1ED3890MC12M
2ED020I12-F2

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

220 mΩ
350 mΩ

EiceDRIVER™
Compact:
1EDI20I12MF
1EDI60I12AF
1ED3124MU12F
1ED3125MU12F
1ED3122MC12H
1ED3124MC12H
1ED3241MC12H

IGBT discretes andsilicon power diodes

Package

Click here to learn more:
www.infineon.com/coolsic-mosfet-discretes
www.infineon.com/sic

www.infineon.com/sic-diodes
www.infineon.com/coolsic-diodes

www.infineon.com/coolsic-gen2
www.infineon.com/SiCgd

SupportRDS(on)Digital isolators

CoolSiC™ MOSFET discrete 1200 V G1

Gate-driver ICs

500-950 V MOSFETs

The gate-source pin of the TO-263 7-pin package, similar to the TO-247 4-pin, eliminates the effect of voltage drops
over the source inductance, further reducing turn-on switching loss. TO-263 7-pin package minimizes the leakage
inductance between drain and source, reducing the risk of high turn-off voltage overshoot.

463

Applications

Solutions

CoolSiC™ MOSFETs

CoolSiC™ MOSFETs discrete 1700 V G1

15-300 V MOSFETs

Best efficiency and reduced complexity for high voltage auxiliary power supplies

500-950 V MOSFETs

The CoolSiC™ MOSFET 1700 V G1 is optimized for flyback topologies that are used in auxiliary power supplies
connected to DC-link voltages ranging from 600 V up to 1000 V. This makes it ideal for numerous power applications.

Key features

Key benefits– Optimized for flyback topologies– Extremely low switching loss
– 12 V/0 V gate source voltage compatible with fly-back controllers– Fully controllable dV/dt for EMI optimization– SMD package with enhanced creepage and clearance distances, >7 mm– The CoolSiC™ MOSFET 1700 V G1 enables simple single-ended flyback topology at

Gate-driver ICs

Features and benefits CoolSiC™ MOSFET 1700 V G1 in TO-263-7 package

high efficiency level for use in auxiliary power supplies– SMD package enables direct integration into PCB, with natural convection coolingwithout extra heatsink

IGBT discretes andsilicon power diodes

Digital isolators– Reduced isolation efforts due to extended creepage and clearance distance of package– Reduced system complexity– High power density

CoolSiC™ MOSFETS discrete 1700 V G1
D²PAK 7-pin
TO-263-7

TO-247-3 HCC

IMBF170R450M1

IMWH170R450M1

IMBF170R650M1

IMWH170R650M1

1000 mΩ

IMBF170R1K0M1

IMWH170R1K0M1

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

450 mΩ
650 mΩ

Intelligent powerswitches and modules

Package

RDS(on)Click here to learn more:
www.infineon.com/sic-diodes
www.infineon.com/coolsic-diodes

www.infineon.com/coolsic-gen2
www.infineon.com/SiCgd

Supportwww.infineon.com/coolsic-mosfet-discretes
www.infineon.com/sic464

Solutions

CoolSiC™ MOSFETs

15-300 V MOSFETs

Applications

CoolSiC™ MOSFETS discrete 2000 V G1
in TO-247 PLUS-4-HCC package

500-950 V MOSFETs

The CoolSiC™ MOSFET 2000 V G1 in TO-247PLUS-4 HCC package has been designed to offer increased
power density without compromising the system’s reliability even under demanding high voltage and switchingfrequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the.XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string
inverters, EV-charging and energy storage systems. The CoolSiC™ MOSFET 2000 V product family is accompaniedby the matching CoolSiC™ Schottky diodes 2000 V in TO-247PLUS-4-HCC and TO-247-2 (10-80 A).

– High power density– Excellent reliability– Highest efficiency– Ease of designIntelligent powerswitches and modules

clearance distances– Benchmark gate threshold voltage, VGS(th) = 4.5 V– Robust body diode for hard commutation– .XT interconnection technology for best-in-class thermal performance– Improved humidity robustness proved through H3HVTRB stress tests

Digital isolators

Key benefits– VDSS = 2000 V for high DC-link systems up to 1500 VDC– Very low switching losses– Innovative HCC package with 14 mm creepage and 5.5 mm

IGBT discretes andsilicon power diodes

Key features

Gate-driver ICs

Features and benefits

CoolSiC™ MOSFETS discrete 2000 V G1
Package

IMYH200R012M1H

24 mΩ

IMYH200R024M1H

50 mΩ

IMYH200R050M1H

75 mΩ

IMYH200R075M1H

100 mΩ

IMYH200R100M1H

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

12 mΩ

Microcontrollers

TO-247PLUS-4-HCC

RDS(on)Click here to learn more:
www.infineon.com/sic-diodes
www.infineon.com/coolsic-diodes

www.infineon.com/coolsic-gen2
www.infineon.com/SiCgd

Supportwww.infineon.com/coolsic-mosfet-discretes
www.infineon.com/sic465

Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes

CoolSiC™ MOSFET Generation 2Intelligent powerswitches and modules

Empowering the next generation of high-performance systems

Microcontrollers

The new Infineon CoolSiC™ MOSFET 650 V and 1200 V Generation 2 improve MOSFET key performance figures such as
stored energies and charges by up to 20 percent compared to the previous generation without compromising quality
and reliability levels leading to higher overall energy efficiency and further contributing to decarbonization.

USB-C controllers
and peripherals

CoolSiC™ MOSFET Generation 2 (G2) technology continues to leverage performance capabilities of silicon carbide byenabling lower energy loss that turns into higher efficiency during power conversion. This provides strong benefits tocustomers for various power semiconductor applications such as photovoltaics, energy storage, DC EV charging,motor drives, and industrial power supplies.

Powermanagement ICs

Improved chip performance and FOMs

WBG semiconductors

Improved .XT package interconnect

Sensors

Best-in-class RDS(on) and the most
granular portfolio in the market

SupportFor more details scan the QR Code:www.infineon.com/coolsic-g2
466

Solutions

CoolSiC™ MOSFETs

Applications

CoolSiC™ MOSFETs discrete 400 V G2

15-300 V MOSFETs

Unique opportunity to provide applications with high performance MOSFETs
between 200 VDS and 600 VDS

500-950 V MOSFETs

The new CoolSiC™ MOSFET 400 V Generation 2 delivers improved system efficiency and power density thanks to ultralow switching losses and on-state resistance while simultaneously offering system cost improvements.
The CoolSiC™ MOSFET 400 V family is the perfect performance and BOM-cost fit in 3- and 2-level topologies:‒ 3-level topologies operating up to 400 VRMS AC / 560 VDC_LINK bus voltage for example:

Digital isolators

Gate-driver ICs

3L totem pole PFC, ANPC, and NPC2 topologies‒ 2-level topologies operating up to 288 VDC_LINK battery/bus voltage for example:
B6, full bridge buck / boost topologies

Key benefits– Brand new 400 VDS voltage class– Using infineon‘s latest CoolSiC™ Generation 2 technology– RDS(on) with low positive temperature co-efficient– Incorporates .XT connect technology– Low turn-off voltage overshoot and excellent dV/dt controllability– Optimum device selection for highest efficiency in multi-level topologies– Proprietary technology with highest efficiency, reliability and best price position– High efficiency operation during high load conditions– Outstanding heat dissipation and highest reliability– Optimum tuning for highest efficiency and fulfilling EMI requirements

Intelligent powerswitches and modules

Key features

IGBT discretes andsilicon power diodes

Features and benefits

3-Level totem pole full-bridge PFC

Featured topology:
3-level flying‑capacitor totem pole PFC

400 V ColSiC™

EiceDRIVER™
1EDB9275F

Microcontrollers

CoolMOS™

EiceDRIVER™
1EDB9275F

AC
Line

EMI
filter
EiceDRIVER™
1EDB9275F

EiceDRIVER™
1EDB9275F

USB-C controllers
and peripherals

Used within a hard-switching 3-level totem pole PFC,
the new CoolSiC™ MOSFET 400 V family delivers a clear
advantage. For example, it represents the perfect choicefor the next generation of server power supplies, enabling
new power density and efficiency levels beyond thecurrent limits!

CoolMOS™
400 V ColSiC™

PFC
controllerPowermanagement ICs

EiceDRIVER™
2EDF7175F

D²PAK-7
TO-263-7

TO-Leadless

11

IMT40R011M2H

IMBG40R011M2H

15

IMT40R015M2H

IMBG40R015M2H

25

IMT40R025M2H

IMBG40R025M2H

36

IMT40R036M2H

IMBG40R036M2H

45

IMT40R045M2H

IMBG40R045M2H

Sensors

RDS(on) typ.
[ mΩ]

WBG semiconductors

CoolSiC™ MOSFETs discrete 400 V G2

Click here to learn more:
www.infineon.com/sic-diodes
www.infineon.com/coolsic-diodes

www.infineon.com/coolsic-gen2
www.infineon.com/SiCgd

Supportwww.infineon.com/coolsic-mosfet-discretes
www.infineon.com/sic

467

CoolSiC™ MOSFET G2 trench technology represents a significant advancement in harnessing the performancecapabilities of silicon carbide. It builds upon the reliability of its predecessor, G1, while enabling lower power losses.
It features excellent RDS(on) x Qfr and superior RDS(on) x Qoss figures-of-merits (FOMs), resulting in ultrahigh efficiency in hardswitching and soft-switching topologies respectively, making it a compelling power device for various applications suchas photovoltaics, energy storage, server, telecom, and EV charging.

Key benefits– Outstanding switching performance– Best-in-class RDS(on) and large granular portfolio– Enlarged driving voltage range -7 V - +23 V static– Best immunity against unwanted turn-on events– High reliability with record low DPM rates– Improved efficiency and achieving high power density– Reduce conduction losses and improved efficiency– Ease of use and compatibility enabling second source– Enable Unipolar driving reaching >99% peak efficiency at PFC and reduced system size
– Increased system life time

Microcontrollers

Features and benefits
Key features

USB-C controllers
and peripherals

Qoss x Ron,max at 25°C

Powermanagement ICs

Lower Eoss
Reduced switching losses in hard-switched
topologies. Better efficiency by lower
magnetizing current possible.
Best light-load efficiency

Lower Qoss
Lower dead time, reduced circulating current
in resonant topologies (e.g., LLC) andless losses at high frequency.
Higher switching frequency, power density

QGD at 400 V / QGS at Vth,typLower Qrr
Enables topologies with repetitive hardcommutation (e.g., Totem Pole PFC).
Enable new highly energy efficient designs

WBG semiconductors

Eoss x Ron,max at 25 °C2Less QGD/QGS
More efficiency and no need for negative
off-state voltages. Simpler and cheaper
driving circuit.
Enable new highly energy efficient designs

Lower QG
Reduced losses at light load,
efficiency in soft-switching topologies.
Enables usage of gate drivers with lower
current capability for same switching speed.
Faster switching, more energy efficiency

Sensors

QG x Ron,max at 25 °C
Qrr x Ron,max at 25 °C

Competitor 1 650 V

Competitor 2 750 V

Competitor 3 650 V

Competitor 4 650 V

Support

650 V CoolSiC™ G2

CoolSiC™ MOSFET discrete 650 V G2
RDS(on) max.
[ mΩ]RDS(on) typ.
[ mΩ]

75

60

62

TO-247-3

TO-247-4

D2PAK-7

IMLT65R060M2H*

IMTA65R060M2H*

50

IMW65R050M2H

IMZA65R050M2H

IMBG65R050M2H

IMLT65R050M2H*

IMTA65R050M2H*

49

40

IMW65R040M2H

IMZA65R040M2H

IMBG65R040M2H

IMLT65R040M2H*

IMTA65R040M2H*

42

33

33/30

26/25

24

20

IMW65R020M2H

IMZA65R020M2H

IMBG65R020M2H

IMLT65R020M2H*

18/21

14.05.2016

IMW65R015M2H

IMZA65R015M2H

IMBG65R015M2H

IMLT65R015M2H*

8.5

6.7/7

IMW65R007M2H*

IMZA65R007M2H*

IMBG65R007M2H

TOLT TSC

Thin-TOLL 8x8

IMLT65R033M2H*
IMLT65R026M2H*
IMTA65R020M2H*

Click here to learn more:
www.infineon.com/coolsic-mosfet-discretes
www.infineon.com/sic* Coming soon

IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules

The G2 technology’s unique combination of high threshold voltage (VGS(th),typ of 4.3 V) with low QGD/QGS ratio ensureshigh robustness against parasitic turn-on, which enables unipolar gate driving (i.e., VGS(off)=0). This helps to increase
power density and low cost of the systems. Moreover, it has more flexibility on driving voltage, which means customer
can turn on the MOSFET with voltages between 15 V and 8 V and turn it off with voltages between -7 V and 0 V.
Further advancement of Infineon’s unique .XT interconnection technology serves to overcome the common challenge ofimproving semiconductor chip performance while maintaining its thermal capability. With a different interconnection
technology, the thermal capability shows a 25 percent improvement for a given chip size, further boosting the chip
figures-of-merit to a new level of SiC performance.

Digital isolators

Gate-driver ICs

The best-in-class lowest RDS(on), the 7 mΩ rating, is feature in TO263-7 SMD package, which helps designer to reduce
conduction loss and improve overall energy efficiency. Combining the fast switching capability which offers more than
30 percent improvement compared to previous generation, G2 offers the next level power density.

15-300 V MOSFETs

Empowering the next generation of high-performance systems

500-950 V MOSFETs

CoolSiC™ MOSFETs discrete 650 V Generation 2

Applications

Solutions

CoolSiC™ MOSFETs

www.infineon.com/sic-diodes
www.infineon.com/coolsic-diodes

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468

Solutions

CoolSiC™ MOSFETs

The CoolSiC™ MOSFET 1200 V G2 in a TO-263-7 package builds on the strengths of Generation 1 technology and enables
the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comeswith significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies,
suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

Gate-driver ICs

System diagram: DC EV chargers up to 150 kW

500-950 V MOSFETs

Striving for excellence in SiC MOSFETs

15-300 V MOSFETs

Applications

CoolSiC™ MOSFET 1200 V G2

– Better energy efficiency– Cooling optimization– Higher power density– New robustness features– Highly reliablePowermanagement ICs

Key benefits– Very low switching losses– Overload operation up to Tvj = 200°C (100h)– Short circuit withstand time 2 µs
– Benchmark gate threshold voltage, VGS(th) = 4.2 V– Robust against parasitic turn on, 0 V turn-off gate voltage can be applied– Robust body diode for hard commutation– .XT interconnection technology for best-in-class thermal performance

WBG semiconductors

Key features

USB-C controllers
and peripherals

Features and benefits

CoolSiC™ MOSFET 1200 V G2
TO-247-4 HC

7/8

IMBG120R008M2H

12

IMBG120R012M2H

IMZC120R012M2H*

17

IMBG120R017M2H

IMZC120R017M2H*

22

IMBG120R022M2H

IMZC120R022M2H*

26

IMBG120R026M2H

IMZC120R026M2H*

34

IMBG120R034M2H*

IMZC120R034M2H*

Q-DPAK TSC
Half-bridge

IMZC120R007M2H*
IMSQ120R012M2HH*

IMSQ120R026M2HH*40

IMBG120R040M2H

IMZC120R040M2H*

IMSQ120R040M2HH*

53

IMBG120R053M2H

IMZC120R053M2H*

IMSQ120R053M2HH*

IMZC120R078M2H*

78

IMBG120R078M2H

116

IMBG120R116M2H

181

IMBG120R181M2H

234

IMBG120R234M2H

Sensors

TO-263-7(D2PAK-7)

SupportRDS(on) typ.
[ mΩ]Click here to learn more:
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www.infineon.com/sic* Coming soon

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469

Solutions

CoolSiC™ Schottky diodes

Applications

CoolSiC™ Schottky diodes

500-950 V MOSFETs

15-300 V MOSFETs

The differences in material properties between silicon carbide and silicon limit the fabrication of practical silicon
unipolar diodes (Schottky diodes) to a range up to 100-150 V, with a relatively high on-state resistance and leakage
current. With SiC, Schottky diodes can reach a much higher breakdown voltage. With more than 20 years of field
experience in SiC, Infineon is the world’s first SiC discrete power supplier. Infineon offers products up to 2000 V indiscrete packages and up to 2000 V in modules.

Applications‒ No reverse‒ Low turn-off losses‒ Reduction of CoolMOS™

‒ System efficiency‒ Server‒ Telecom‒ Solar‒ UPS‒ EV-charging‒ Energy storage‒ PC power‒ Motor drives‒ Lighting‒ CAV

recovery charge‒ Purely capacitive
switching‒ High operating
temperature(Tj, max 175°C)

or IGBT turn-on loss
‒ Switching losses
independent
from load current,switching speed,
and temperature

improvement comparedto Si diodes‒ Reduced coolingrequirements‒ Enabling higher
frequency/increased
power density‒ Higher system reliability
due to lower operating
temperature‒ Reduced EMI

Digital isolators

Benefits

IGBT discretes andsilicon power diodes

Advantages

Intelligent powerswitches and modules

FeaturesGate-driver ICs

The long market presence and experience enable Infineon to deliver highly reliable, industry-leading SiC performance.
With over ten years of pioneering experience in developing and manufacturing SiC diodes, Infineon’s latest CoolSiC™
Schottky diode generation 6 family sets a benchmark in quality, efficiency and reliability.

0.13

0.16
0.19
0.22
0.25
Time [µs]
SiC Schottky diodeUltrafast Si-pin diodeSi-pin double diode (2*300 V)

Microcontrollers
USB-C controllers
and peripherals

0.1

Reverse-recovery charge of SiC Schottky diodes versus Si-pin diodes
The majority of carrier characteristics imply no reverse recovery charge
and the only contribution to the switching losses comes from the tiny
displacement charge of capacitive nature. In the same voltage range, silicon
devices have a bipolar component resulting in much higher switchinglosses. The graph shows the comparison between various 600 V devices.

Powermanagement ICs

I [A]

T=125°C, VDC= 400 V, IF=6 A, di/dt=200 A/µs
10
8
6
4
2
0
-2
-4
-6
-8
-10
0.07

95.0

93.5
93.0
92.5
92.0
91.5

WBG semiconductors

Improved system efficiency (PFC in CCM mode operation, full load, low line)
The fast switching characteristics of the SiC diodes provide clear efficiency
improvements at a system level. The performance gap between SiC andhigh-end silicon devices increases with the operating frequency.

94.0

91.0
120
180
Switchting frequency [kHz]Infineon SiC 6 A

Comp. 1 6 A

240Comp. 2 6 A

Sensors

60

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www.infineon.com/SiCgd

Support

Efficiency [%]

94.5

470

Solutions

CoolSiC™ Schottky diodes

Applications

CoolSiC™ Schottky diodes 650 V

15-300 V MOSFETs

CoolSiC™ Schottky diodes 650 V G6 and G5

500-950 V MOSFETs

The CoolSiC™ Schottky diode 650 V G6 product family is built over the strong characteristics of the previous G5
generation, fully leveraging technology and process innovation to propose the best efficiency and price/performance
products to date.

Foundation technology – CoolSiC™ Schottky diodes 650 V G5

Gate-driver ICs

The established CoolSiC™ Schottky diodes G5 product family has been optimized after all key aspects including
junction structure, substrate and die attach. It represents a well-balanced product family which offers state-of-the-art
performance and high surge current capability at a competitive cost level.

Backside andpackaging

IGBT discretes andsilicon power diodes

ent
urr
ge c

30

Intelligent powerswitches and modules

20
15
10
5

2.00

4.00

8.00

10.00

12.00

14.00

VF (V)
Schottky diodeforward characteristic

Bipolar PN diodeforward characteristic

USB-C controllers
and peripherals

Combinedcharacteristic

60
50
40
30
20
10
0

0

2

4
VF [V]

Generation 5

6

8Generation 2, 3

WBG semiconductors

Die attach: diffusion soldering
On the backside, package level diffusion soldering is
introduced, which significantly improves the thermal path
between the lead frame and the diode, enhancing thethermal performance. With the same chip size and power
dissipation, the junction temperature is reduced by 30°C.

Microcontrollers

00.00

Diffusion
soldering

RthJC=2.0 K/W

Powermanagement ICs

IF (A)

25

Sensors

110 µm35

IF [A/mm2]

SiC substrate

Substrate: thin wafer technology
On the substrate level, Infineon introduced the thin wafer
technology. At the later stage of our SiC diode production,
the thin wafer process is used to reduce the wafer
thickness by about two-thirds, which significantly reduces
the substrate resistance contribution, thus, improving
both forward voltage (VF) and thermal performance.

40

sur

Junction: merged PN structure
On the junction level, it has an optimized merged PN
structure. Compared to competitors, Infineon’s SiC diodeAl
has an additional P-doped area, which, together withTi
p+ p+ p+ p+ p+ the N-doped EPI layer, forms a PN junction diode. Thus,
it is a combination of Schottky diode and PN junction
diode. Under normal conditions, it works like a standard
Schottky diode. Under abnormal conditions, such as
EPI
layer
lighting, AC line drop-out, it works like a PN junction
diode. At high current level, the PN junction diode has asignificantly lower forward voltage (VF) than the Schottky
diode, which leads to less power dissipation, thus
Field stop layer
significantly improving the surge current capability.
Al wire bondDigital isolators

Innovation: optimized junction, substrate and die attach
Infineon’s SiC Schottky diode generation 5 is optimized with regard to all key aspects relevant for high-power andhigh-efficiency SMPS applications.

RthJC=1.5 K/W

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Efficiency comparison
Relative efficiency at 130 kHz

0.02

0.02
0.00

-0.04
-0.06
-0.08
-1.00
50

60

70

80

90

100

-1.00
-1.02

10

Output power [% of nominal]
G6

20

30

40

50

60

70

80

90

100

Output power [% of nominal]
Competitor 1

Competitor 2

IGBT discretes andsilicon power diodes

40

-0.08

Competitor 3Intelligent powerswitches and modules

In terms of efficiency, the 8 A G6 device has been tested in CCM PFC. The maximum output power is 3.5 kW. The left
figure shows the relative efficiency at 65 kHz, while the figure on the right shows the relative efficiency at 130 kHz.
This shows that Infineon’s CoolSiC™ Schottky diode G6 delivers better efficiency over the full load range, keeping thisadvantage even at 130 kHz, therefore meeting the needs of designers who want to increase the switching frequencies
in their designs to attain more power density.

Price

G2*

USB-C controllers
and peripherals

CoolSiC™ Schottky diodes G6 are the outcome of Infineon’s continuous
technological and process improvements, which enable the design anddevelopment of SiC-based products, making them more price-competitiveand increasing performance across generations. As a result, G6 isInfineon’s best price/performance CoolSiC™ Schottky diode generation,offering the highest efficiency. In addition, Infineon offers the reliability ofcollaborating with the industry leader. Customers can leverage Infineon’s
proven quality and supply chain reliability. They can benefit from “onestop-shop” advantages and maximize system performance, combining
CoolSiC™ Schottky diodes with the SJ MOSFETs of the CoolMOS™ 7 family,such as 600 V C7, 650 V C7, 600 V G7, 650 V G7, and 600 V P7.

Microcontrollers

The best price performance

G3
G5
G6

* G2 is discontinued

Performance (efficiency, density)

A comprehensive portfolio
The combined G6 and G5 CoolSiC™ Schottky diode 650 V diode portfolio offers a wide choice of packages and ampere
class granularity to allow the best fit to applications. G6 comes in double DPAK, the first top-side cooled surface mountpackage, which allows thermal decoupling of PCB to chip junction and enables higher power dissipation and improved
system lifetime thanks to the reduced board temperature.

Powermanagement ICs

30

-0.06

WBG semiconductors

20

-0.04

Sensors10-0.02

Digital isolators

Efficiency difference [%]Efficiency difference [%]

0.00
-0.02

-1.02

Gate-driver ICs

Relative efficiency at 65 kHz

15-300 V MOSFETs

The CoolSiC™ Schottky diodes G6 product family introduces a novel and proprietary Schottky metal system. This
contributes to reducing the forward voltage (VF) to challenging levels, determining a measurable decrease of conduction
losses. Infineon’s CoolSiC™ Schottky diodes enable optimum efficiency and ruggedness. Lower forward voltage (VF)means lower conduction loss, and lower capacitive charge (Qc) means lower switching loss. Qc x VF is the figure of merit for
efficiency, and comparison indicates that the latest generation 6 products have the lowest Qc x VF on the market. Infineon’s
CoolSiC™ Schottky diodes offer a surge current robustness far better than the one offered by the most efficient products.
Thus, under abnormal conditions, this surge current capability offers excellent device robustness.

500-950 V MOSFETs

Latest development - CoolSiC™ Schottky diodes 650 V G6

Applications

Solutions

CoolSiC™ Schottky diodes

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Solutions

CoolSiC™ Schottky diodes

Applications

CoolSiC™ Schottky diodes 1200 V

15-300 V MOSFETs

A new level of system efficiency and reliability

500-950 V MOSFETs

By using hybrid Si power switch/SiC diode sets, industrial application designers will gain flexibility for system
optimization compared to purely silicon-based solutions. SiC diodes enable system improvements such as higher
output power, greater efficiency or higher switching frequency. By implementing CoolSiC™ diodes generation5, for example, in Vienna rectifier topology, in combination with Infineon’s 650 V TRENCHSTOP™ IGBTs and 650 V
CoolMOS™ MOSFETs, designers can achieve outstanding system-level performance and reliability.
One of the most commonly used topologies for EV DC charging
Vienna rectifier

Full-bridge LLC

Gate-driver ICs

6x 1200 V CoolSiC™
Schottky diode Gen56x 650 V CoolMOS™/
TRENCHSTOP™ 7
4x 1200 V
CoolSiC™
Schottkydiode Gen5

Digital isolators

4x 1200 V
CoolSiC™
MOSFET

PWM
Generation

Auxiliary
power supply

IGBT discretes andsilicon power diodes

EiceDRIVER™

ADCIntelligent powerswitches and modules

EiceDRIVER™

Key features

Key benefits– Zero Qrr leading to no reverse recovery losses– High surge current capability up to fourteen times of the nominal current– Tight forward voltage distribution– Temperature-independent switching behavior– Low forward voltage (VF = 1.4 V) even at high operating temperature– Available in both through-hole and SMD packages– Up to 40 A rated diode– System efficiency improvement over Si-based diodes– Enabling higher frequency/increased power density solutions– High system reliability by extended surge current– Reduced cooling requirements through lower diode losses and lower case

Microcontrollers

Features and benefits

temperatures– System size/cost saving due to reduced heatsink requirements andUSB-C controllers
and peripherals

smaller magnetics

650 V Si IGBT/Si SJ MOSFET and 1200 V SiC diode/ultrafast Si diode in a Vienna rectifier topology, fsw=48 kHz
99.0
IGBT

98.5

650 V IGBT + 1200 V SiC diode(IKW50N65EH5 + IDW15G120C5B)
650 V SJ MOSFET + 1200 V Si diode(IPW65R045C7 + Vendor A)

w. SiC diode

CoolMOS™

97.5

IGBT

650 V IGBT + 1200 V Si diode(IKW50N65EH5 + Vendor A)

WBG semiconductors

98.0

w. Si diode97.0

SiC vs. Si diode‒ +0.8% higher efficiency‒ Increased output power is possible

96.5

0

1000

2000

3000

4000

Sensors

96.0
5000

Output power [W]

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Support

Efficiency [%]Powermanagement ICs

650 V SJ MOSFET + 1200 V SiC diode(IPW65R045C7 + IDW15G120C5B)

CoolMOS™

473

IGBT discretes andsilicon power diodes

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

15-300 V MOSFETs

Applications

Solutions

CoolSiC™ Schottky diodes
product portfolioIF[A]

TO-220 R2L

6

IDH06G65C68

IDH08G65C610

IDH10G65C612

IDH12G65C616

IDH16G65C620

IDH20G65C6

IDDD08G65C6

Microcontrollers

IDH04G65C6

Double DPAK

IDDD16G65C6

USB-C controllers
and peripherals

4Intelligent powerswitches and modules

CoolSiC™ Schottky diodes 650 V G6

CoolSiC™ Schottky diodes 650 V G5
TO-220 R2L

4

IDH04G65C56

IDH06G65C5

TO-247
Dual Die

TO-247

D2PAK R2L

ThinPAK 8x8
IDL04G65C5

IDK06G65C5

IDL06G65C5

IDH08G65C5

IDK08G65C5

IDL08G65C5

IDH10G65C5

IDW10G65C5

IDK10G65C5

IDL10G65C512

IDH12G65C5

IDW12G65C5

IDK12G65C5

IDL12G65C516

IDH16G65C5

IDW16G65C520

IDH20G65C5

IDW20G65C5B

IDW20G65C530/32

IDW32G65C5B

IDW30G65C540

IDW40G65C5B

IDW40G65C5

WBG semiconductors

8
10

Power
management ICs

IF
[A]

24

PIN 2

Sensors

PIN 1„B“ in product name refers to dual diewith the common-cathode configuration.

CASE

PIN 3

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Applications

Solutions

CoolSiC™ diodes
product portfolio

CoolSiC™ Schottky diodes 600 V G3
TO-220 R2L

3DPAK R2L

15-300 V MOSFETs

IF[A]

IDD03SG60C

4

IDD04SG60C
IDH06SG60C

8

IDH08SG60C

IDD06SG60C
IDD08SG60C10

IDH10SG60C

IDD10SG60C

500-950 V MOSFETs

6

12TO-247 R2L

DPAK R2L

D2PAK R2L

2

IDH02G120C5

IDM02G120C5

IDK02G120C5

5

IDH05G120C5

IDM05G120C5

IDK05G120C58

IDH08G120C5

IDM08G120C5

IDK08G120C510

IDH10G120C5

IDW10G120C5B 1)

IDWD10G120C5

15/16

IDH16G120C5

IDW15G120C5B 1)

IDWD15G120C5

IDK16G120C520

IDH20G120C5

IDK20G120C5

IDWD20G120C5

IDW30G120C5B 1)

IDWD30G120C540

IDW40G120C5B 1)

IDWD40G120C5

IDK10G120C5

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

IDW20G120C5B 1)

30

IDM10G120C5Digital isolators

TO-247
Dual Die

TO-220 R2L

IGBT discretes andsilicon power diodes

IF[A]

Gate-driver ICs

CoolSiC™ Schottky diodes 1200 V G5

PIN 1
PIN 2

CASE

Sensors1) „B“ in product name refers to dual diewith the common-cathode configuration.

PIN 3

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Applications

Solutions

CoolSiC™ Schottky diodes

CoolSiC™ Schottky diode 2000 V G5

15-300 V MOSFETs

CoolSiC™ Schottky diodes for up to 1500 VDC applications

Gate-driver ICs

500-950 V MOSFETs

The CoolSiC™ Schottky diode 2000 V family is ideally suited for high DC link systems with up to 1500 VDC. Compared
to 1700 V SiC diode, the devices also provide a sufficiently high overvoltage margin for 1500 VDC systems. Due to the.XT connection technology, the components offer first-class thermal performance. They are also highly resistant tohumidity. The CoolSiC™ Schottky Diodes are offered in two package variants – TO-247PLUS-4 HCC and TO-247-2.
These diodes are particularly suitable for solar and EV charging applications. A matching gate driver portfolio is alsoavailable.
Optimize your 1500 VDC PV system with CoolSiC™ MOSFETs and diodes
DC/AC
inverterAC filter
Digital isolators

DC/DC
link

IGBT discretes andsilicon power diodes

DC/DC
boost

Key benefits– High surge current capability– Temperature independent switching behavior– Low forward voltage even at high operating temperature– Tight forward voltage distribution– Specified dv/dt ruggedness– .XT interconnection technology for best-in-class thermal performance– Enables high DC-link systems up to 1500 VDC– Minimized conduction losses– No reverse recovery current– High power with half the part count– Topology simplification– Increased reliability

Microcontrollers

Key features

Intelligent powerswitches and modules

Features and benefits

TO-247 2-pin

10

IDYH10G200C5*

IDWD10G200C5*25

IDYH25G200C5*

IDWD25G200C5*40

IDYH40G200C5*

IDWD40G200C5*50

IDYH50G200C5*

IDWD50G200C5*80

IDYH80G200C5*

IDWD80G200C5*

Power
management ICs

TO-247PLUS-4 HCC

Sensors

WBG semiconductors

IF[A]

USB-C controllers
and peripherals

CoolSiC™ Schottky diodes 2000 V G5

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Applications

Solutions

WBG nomenclature

Nomenclature
-

11

-

#

-

LL

-

Company
and technology
GS = Infineon GaN

Reliability grade
blank = Industrial
A = Automotive
S = Standard

Voltage
065 = 650 V or 700 V

Package
B = Bottom-side cooled
GaNpx embedded
T = Top-side cooled
GaNpx embedded
S = Dual Side Cooled
GaNpx embedded
L = PDFN package
LR = PDFN with reversed
Pin1 location ascompared to -L
LL = TOLL Package
LT = TOLT Package
D = Die

Resistance
004 = 4 A to 5 A
008 = 8 A to 10 A
011 = 11 A to 13 A
014 = 14 A to 17 A
018 = 18 A to 24 A
030 = 30 A to 40 A

500-950 V MOSFETs

065

Gate-driver ICs-

Digital isolators

GS

15-300 V MOSFETs

High-voltage CoolGaN™ Transistors

IGBT discretes andsilicon power diodes

Internal use

60

R

070

D

1

Company
I = Infineon

Reliability grade
blank = Industrial
A = Automotive
S = Standard

Technology
G = GaN

Microcontrollers

LD

Technology indicator

Package
LR = DFN 5x6 - TSONLD =DFN 8x8 - LSON
T = TOLL
LT = TOLTO = DSO20-BSC
OT = DSO20-TSC

Product type
D = Discrete
S = Smart
B = BDS

Blocking voltage
Multiplied by 10
60 = 600 V
65 = 650 V

Resistance RDS(on)USB-C controllers
and peripherals

G

RDS(on) typ [mΩ]070 = 70 mΩ

Sensors

WBG semiconductors

Powermanagement ICs

IIntelligent powerswitches and modules

High-voltage CoolGaN™ Transistors

Click here to learn more:
www.infineon.com/gan-ips
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Supportwww.infineon.com/wbg
www.infineon.com/gan477

Solutions

WBG nomenclature

6

65

08

B
15-300 V MOSFETs

GS

Applications

High-voltage CoolGaN™ Transistors

Internal use
Voltage
Multiplied by 10
65 = 650 V

500-950 V MOSFETs

Package type
B = Bottom-side cooled
GaNpx™ embedded
T = Top-side cooled
GaNpx™ embedded
P = Bottom-side cooled
GaNpx™ embedded
D = die

Company and Technology
GS = Infineon GaN

Gate-driver ICs

IDS current rating (A)02 = 7.5 A
04 = 15 A
06 = 22.5 A
08 = 30 A
16 = 60 A

60Company
I = Infineon
G = GaN
I= Integrated
Blocking voltage
Multiplied by 10
60= 600 V
65 = 650 V
Isolation
F = Functional isolation
N = Non-isolation
L = Level-shift – junction isolated
D = Dual switch w/o driver, no-isolation
Single-switch
3 digits, e.g. 140 = 140 mΩ

1414

A

1

L
Reliability grade
none = Industrial
S = Standard
A = Automotive
Package (form-factor)
P = 5x6 DFN
M = 6x8 QFN
L = 8x8 QFN
T = TOLL
LT = TOLTDQ = Q-DPAK TSC
QC = Q-DPAK BSC
Family code
1 = IPS w/ driver
2 = IPS w/ driver + safety features
3 = IPS w/o driver
Product version
A = 1st version
B = 2nd version

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Dual-switch half-bridge
4 digits. e.g. 1414 =140 mΩ

F

IGBT discretes andsilicon power diodes

IIntelligent powerswitches and modules

G

Microcontrollers

I

Digital isolators

High-voltage CoolGaN™ Drive

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www.infineon.com/gan

478

Applications

Solutions

WBG nomenclature

Medium-voltage CoolGaN™ Transistors
C

0303

S

10

[…]

1

[…]

15-300 V MOSFETs

G

Reliability grade
blank = Industrial
S = Standard/consumer
A = Automotive
Q = AEC-Q10x

Company
I = Infineon
Technology
G = GaN

500-950 V MOSFETs

I

HEMTS RDS(ON) Code4 digits for HB (HS+LS)
3 digits for single HEMT

Voltage rating [V]Multiply by 10 to get voltage rating valuee.g. 10 = 100 V
20 = 200 V
04 = 40 V

Digital isolators

Additional features
S = Dual-side cooling
E = Reduced slew rate for EMI
D = Single HB PWM with DT control
blank = Standard Schottky gate
G = GIT gate
P = Protections

Gate-driver ICs

Product Generation
PackageA = 2x2
B = 3X3
C = 3x5
D = 4x5
E = 5x6
J = 6x9
K = WLCSPW = bare die

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Configuration
S = Single
D = Duo
H = HBF = FBX = B6
B = Bidirectional
O = Monolithic HB power stage
M = MCM HB power stage
R = Single with SR control
J = Single with high-side driver
C = Current Sense Output

Click here to learn more:
www.infineon.com/gan-ips
www.infineon.com/driver-gan

Supportwww.infineon.com/wbg
www.infineon.com/gan479

Solutions

WBG nomenclature

M

W

65

R

45

M1

H
15-300 V MOSFETs

I

Applications

CoolSiC™ MOSFET nomenclature

Company
I = Infineon
H = High gate voltage range

DeviceM = MOSFET

500-950 V MOSFETs

Series name
M1 = Generation 1
M2 = Generation 2

Package type
W = TO-247
Z = TO-247 4-pin
BG = D2PAK 7-pin
BF = D2PAK 7-pin (ext. creepage)
T = TO Leadless (TOLL)
DQ = HDSOP(Quadruple DPAK) TSC
ZA = TO-247 4pin asymmetric pins
YH = TO-247PLUS-4pin HCC
LT = TOLT TSC
TA = Thin-TOLL 8x8
SQ = Q-DPAK TSC Half-bridge
ZC = TO-247 4-pin HC

RDS(on) [mΩ]Gate-driver ICs

R = RDS(on)As a separator between
voltage und RDS(on)Digital isolators

Breakdown voltage
Divided by 10
65 = 650 V
75 = 750V
120 = 1200 V
170 = 1700 V
200 = 2000 V

W

75

R

030

M1

H

A = Automotive gradIntelligent powerswitches and modules

M

Reliable grade
H = High gate voltage range

Company
I = Infineon

Series name
M1 = Generation 1

DeviceM = MOSFETRDS(on) [mΩ] typ.

Microcontrollers

I

Specifications
R = RDS(on)As a separator
between voltage
and RDS(on)Package type
W = TO247- 3 pin
ZA = TO-247 4pin asymmetric
BG = TO-263-7 (D2PAK 7pin)
DQ = HDSOP Quadruple DPAK TSC
QC = HDSOP Quadruple DPAK BSC

USB-C controllers
and peripherals

A

IGBT discretes andsilicon power diodes

CoolSiC™ Automotive MOSFET discrete 750 V nomenclature

Sensors

WBG semiconductors

Powermanagement ICs

Breakdown voltage
Divided by 10
75= 750V

Click here to learn more:
www.infineon.com/sic-diodes
www.infineon.com/coolsic-diodes

www.infineon.com/coolsic-gen2
www.infineon.com/SiCgd

Supportwww.infineon.com/coolsic-mosfet-discretes
www.infineon.com/sic480

Solutions

SiC diodes nomenclature

D

H

X

S

G

X

C

Company
I = Infineon

15-300 V MOSFETs

I

Applications

CoolSiC™ Schottky diodes G2 and G3

Specifications
C = Surge current stable

DeviceD = DiodePackage type
D = DPAK
H = TO-220 R2L
B = D2PAK
D = DPAK = TO-220
V = TO-220 FullPAK
W = TO-247

500-950 V MOSFETs

Breakdown voltage
60 = 600 V

Gate-driver ICs

G = Low thermal resistance(diffusion soldering)Technology
S = SiC diode

Digital isolators

Continuous forward current
[A]

K

X

G

X

C

5

B

Company
I = Infineon

B = Common-cathode configuration

DeviceD = Diode

Series name
5 = Generation 5
6 = Generation 6

Package type
D = TO 252 (DPAK)
DD = HDSOP (Double DPAK) with TSC
H = TO-220 R2L
W = TO-247
K = D2PAK R2L
L = ThinPAK 8x8
M = DPAK R2L
WD = TO-247 R2L
YH = TO-247PLUS-4 HCC

Intelligent powerswitches and modules

D

Specifications
C = Surge current stable*
Breakdown voltage
65 = 650 V
120 = 1200 V
75 = 750 V
200 = 2000 V

Microcontrollers

I

IGBT discretes andsilicon power diodes

CoolSiC™ Schottky diodes G5 and G6

USB-C controllers
and peripherals

G = Low thermal resistanceSensors

WBG semiconductors

Powermanagement ICs

Continuous forward current[A]

Click here to learn more:
www.infineon.com/sic-diodes
www.infineon.com/coolsic-diodes

www.infineon.com/coolsic-gen2
www.infineon.com/SiCgd

Supportwww.infineon.com/coolsic-mosfet-discretes
www.infineon.com/sic

481

Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules

Useful links and helpful information

Powermanagement ICs

Further information, datasheets and documents

WBG semiconductors

www.infineon.com/sic
www.infineon.com/sic-diodes
www.infineon.com/coolsic-gen2
www.infineon.com/SiCgd
community.infineon.com

Sensorswww.infineon.com/wbg
www.infineon.com/gan
www.infineon.com/gan-ips
www.infineon.com/driver-gan

Microcontrollers
USB-C controllers
and peripherals

Infineon support for wide bandgap semiconductors

Click here to learn more:
www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

Supportwww.infineon.com/smps
www.infineon.com/xxxxxxx

482

Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules
Microcontrollers

XENSIV™ sensors
XENSIV™ sensor technologies for automotive,
industrial, consumer and IoT applications

WBG semiconductors

Powermanagement ICs

Design support‒ XENSIV™ connected sensor kit‒ Shield2Go‒ Sensor 2GO kits
‒ Add ons for Sensor 2GO kits and Shield2Go‒ Evaluations boards

Sensors‒ XENSIV™ Developer Community‒ Current sensors‒ Magnetic sensors‒ 3D magnetic sensors‒ Linear sensors‒ Angle sensors‒ Magnetic speed sensors‒ Pressure sensors‒ MEMS microphone technology‒ Radar sensors‒ XENSIV™ PAS CO2 sensor‒ Intuitive sensing

USB-C controllers
and peripherals

XENSIV™ sensors

Click here to learn more:
www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

Supportwww.infineon.com/smps
www.infineon.com/xxxxxxx

483

Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules
Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Check it out and be part of the XENSIV™ sensor community.

SupportThe Infineon Developer Community offers 24/7 self-service and lightning fast responses to customer demands.
Any user, anywhere, anytime – any subject. The community is well-organized due to its multi-channel strategy.
Unlike unmoderated forums, the developer community
is based on high quality content that is professionallymoderated and reviewed.

Microcontrollers

Ask the XENSIV™ Developer Community484

Gate-driver ICs

500-950 V MOSFETs

15-300 V MOSFETs

Applications

Solutions

Current sensors

Digital isolators

Current sensors
XENSIV™ – high-precision coreless current sensors for automotive and industrial

The differential current sensor measurement with two
Hall cells ensures high accuracy even in a noisy environment like crosstalk from adjacent current lines or magnetic stray fields. System designers can program thesensitivity of the sensor as well as the threshold levels

IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules
Microcontrollers
Powermanagement ICs

On the one hand, we have the current sensors withan integrated current rail. The sensors in the TISON
package allow the accurate measurement with highfrequencies and small impact on the phase shift of thecurrent signal. On the other hand, our current sensors
for external current rails are non-invasive Hall effectcurrent sensors and provide safe and reliable solutions
for power electronics since there is no additional power dissipation. Our selection of isolated, non-contact
current sensors can be used for current detection andmonitoring in SiC and GaN applications, including motor control applications.

USB-C controllers
and peripherals

Product portfolio
Infineon’s product portfolio includes wide bandgap current sensors for both industrial and automotive application needs. Our current sensors achieve high accuracy
using the Hall effect, which enables current measurements from DC to AC with an internal bandwidth of up
to 240 kHz without being disturbed by external magnetic fields.

WBG semiconductors

Infineon’s XENSIV™ family of high-precision corelessopen-loop current sensors are less bulky, and cost lesscompared to core-based current sensors. Based on
Infineon’s precise and stable Hall effect current sensor
IC technology, the current sensor analog output signal
is highly linear over temperature and lifetime. Due tolacking an iron core or a flux concentrator, the sensor
signal shows neither hysteresis nor does it suffer fromsaturation.

of the two dedicated overcurrent signals and therefore
adapt them to individual requirements without any
external components. The contactless current sensor
IC also provides a warning signal in case of an over- or
under-voltage condition for the supply voltage.

Sensors

Used to measure both AC and/or DC currents, Infineon’s
current sensors provide accurate and stable current
measurement up to 120 A or 31 mT respectively. Our
magnetic current sensors include either an integrated
current rail in the package for low currents or measure
the magnetic field of an external current rail for medium
to high currents. The products are intended for use in
48 V, as well as high voltage and/or wide bandgap applications such as traction inverters, industrial drives,photovoltaic inverters, or EV charging systems.

Click here to learn more:
Supportwww.infineon.com/current-sensors
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Solutions

Current sensors

Applications

TLI4971
High-precision coreless sensors for industrial application

IGBT discretes andsilicon power diodes

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

15-300 V MOSFETs

Features– Integrated current rail with typical 220 µΩ insertion resistance enables ultralow power loss
– Small form factor, 8 × 8 mm SMD, for easy integration andboard area saving– Highly accurate, scalable, DC and AC current sensing– Bandwidth of 240 kHz enables wide range of applications– Very low sensitivity error over temperature (< 2.0%)– Excellent stability of offset over temperature and lifetime– Galvanic functional isolation up to 1150 V peak VIORM, partial discharge 3500 VRMS, 4 mm clearance and creepage– Differential sensor principle ensures superior magneticstray field suppression– Two independent fast Over-Current Detection (OCD) pinswith configurable thresholds enable protection mechanisms for power circuitry (typical 0.7 µs)– Pre-calibrated sensor

Intelligent powerswitches and modules

Applications– Energy storage systems– Electrical drives (up to 975 Vpk)

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers– Photovoltaic inverter– General purpose & GaN-based inverters– Chargers– Power supplies

Click here to learn more:
Supportwww.infineon.com/current-sensors
486Solutions

Current sensors

500-950 V MOSFETs

15-300 V MOSFETs

Difference between
TISON-8-6 and
TISON-8-5

Block diagram

IP+

Bias signal
for diagnosis
mode

Lateral orverticalsensorplacement

VDD

Infrastructure(power, clk, references)

Diff.
Hall

GND

EEPROM
References

OCD1
OCD2

Signalconditioning

AOUT

Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules
USB-C controllers
and peripherals

Microcontrollers– AEC-Q100 Grade 1 qualified (125°C)– Ultra-low power loss due to minimal resistance of
current rail
– Reliable current measurement over lifetime(no re-calibration)– Functional isolation for high-voltage application– Easy and compact package allows high-power
density design– Pre-programmed variants for 25, 50, 75 and 120 A– High accuracy, low noise analog output
The integrated primary conductor (current rail) withvery low insertion resistance and inductance minimizes
the power loss and enables miniaturization of the sensing circuit. The analog output (AOUT) can be configured
in single-ended, semi-differential, and fully-differential
mode together with the voltage reference pin (VREF)

Powermanagement ICs

Features and benefits– Measurement up to 70 ARMS at 690 VRMS
– Typical error at 25°C < 2%
– Current rail resistance at 220 µΩ and inductance< 1 nH specified typ– Analog output signal (with typ. 210 kHz) bandwidth– Fast (<0.7 µs) overcurrent detection up to 2 x IFSR

Gate-driver ICs

Infineon’s well-established and robust monolithic Hall
technology enables accurate and highly linear measurement of currents with a full scale up to 120 A. Negative
effects, like saturation and hysteresis, commonly known
from core-based sensor techniques, are not present in the
Infineon open loop, coreless sensors principle. The smart
current rail design (double U-shape) combined with a differential signal sensing makes the current sensor robust
against stray fields. The sensor is shipped as a fully calibrated product without requiring any customer end-of-line
calibration. It comes in a small 8 × 8 mm TISON-8 leadlesspackage, which allows standard SMD assembly. The sensor
can be reprogrammed for many parameters enabling thecustomer to achieve maximal adaption for his application
requirements, such asindustrial drives, xEV auxiliary drives, PV inverter, DC fast
charger and On-Board-Charger (OBC).

WBG semiconductors

The Infineon TLE4971 is a high-precision current
sensor for bi-directional AC and DC measurements.
The device has an analog interface and two fast overcurrent detection outputs that support the power
circuitry’s protection. Galvanic isolation is provided
due to magnetic sensing principle.

Applications

TLE4971
High-precision coreless current sensor for automotive and industrial applications

VREF

Temp
MUX

TLE4971

Click here to learn more:

Output offset

Two separate overcurrent pins (OCD1/OCD2) provide afast output signal in case the current exceeds a pre-set
threshold.

Sensors

Stresswww.infineon.com/current-sensors

SupportIP-

487

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

Features and benefits– Hall based coreless magnetic current sensor– AC and DC sensing– Two dedicated pins for overcurrent detection– Scalable sensitivity– ISO 26262-compliant– ASIL B as SEooC– Typical bandwidth of 210 kHz– High accuracy up to 2 kA
– Very low error over temperature and lifetime– Protection against overcurrent events for fast switching technologies, e.g. SiC– No saturation or hysteresis effects– Very low power losses through sensing structure– Ideal for platform designs– Fast reaction time of analog sensor output– Simplified functional safety assessment

Diff.
Hall

GND

ReferencesPower
management ICs

EEPROM

OCD1
OCD2

Signalconditioning

WBG semiconductors

Lateral orverticalsensorplacement

VDD

Infrastructure(power, clk, references)

Bias signal
for diagnosis
mode

USB-C controllers
and peripherals

Block diagramIP+

15-300 V MOSFETs

Infineon expanded the sensor portfolio with a new family of 5 V current sensors TLE4973. The new sensors will
be available in three different packages to cover a wide
range of applications in the automotive and industrial
market. Target applications include traction inverter for
xEV, auxiliary drives, PV inverter and on-board-charger(OBC).

Gate-driver ICs

The Infineon TLE4972 product family of coreless magnetic
current sensors specifically addresses requirements for
current sensing in automotive applications. The well-established and robust Hall technology enables accurate
and highly linear current measurements of the magnetic
field induced by the current. With its compact design anddiagnosis modes, the TLE4972 is ideal for xEV applications
like traction inverters used in hybrid and battery-driven
vehicles, as well as for battery main switches.

500-950 V MOSFETs

TLE4972 / TLE4973
High-precision coreless current sensors for automotive and industrial applications

Applications

Solutions

Current sensors

AOUT
VREF

Temp
MUX
StressTLE4972

Output offset

Sensors

IP-

Click here to learn more:
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Solutions

Current sensors

Current
range[A]

Bandwidth
typ.
[kHz]

Sensitivity

Accuracy[mV/A][%]TLI4971-A025T5-E0001

25

240

48

<2

350

TLI4971-A050T5-E0001

50

240

24

<2

350

TLI4971-A075T5-E0001

75

240

16

<2

350

TLI4971-A120T5-E0001

120

240

10

<2

TLI4971-A025T5-U-E0001

25

240

48

TLI4971-A050T5-U-E0001

50

240

TLI4971-A075T5-U-E0001

75

TLI4971-A120T5-U-E0001

Outputnoise density[µA/√Hz]Classification

Industrial

Automotive

SupplyCurrent
Rail

Package✓–

3.3

Internal

TISON-8-5

✓

–

3.3

Internal

TISON-8-5

✓

–

3.3

Internal

TISON-8-5

350

✓

–

3.3

Internal

TISON-8-5

<2

350

✓

–

3.3

Internal

TISON-8-5

24

<2

350

UL1577/✓–

3.3

Internal

TISON-8-5

240

16

<2

350

IEC 62368-1

✓

–

3.3

Internal

TISON-8-5

120

240

10

<2

350

✓

–

3.3

Internal

TISON-8-5

TLE4971-A025N5-E0001

25

210

48

<2

260

✓

✓

3.3

Internal

TISON-8-5

TLE4971-A050N5-E0001

50

210

24

<2

260

✓

✓

3.3

Internal

TISON-8-5

TLE4971-A075N5-E0001

75

210

16

<2

260

✓

✓

3.3

Internal

TISON-8-5

TLE4971-A120N5-E0001

120

210

10

<2

260

✓

✓

3.3

Internal

TISON-8-5

TLE4971-A025N5-U-E0001

25

210

48

<2

260

✓

✓

3.3

Internal

TISON-8-5

TLE4971-A050N5-U-E0001

50

210

24

<2

260

AEC-Q100/

✓

✓

3.3

Internal

TISON-8-5

UL 1577✓✓

3.3

Internal

TISON-8-5[V]

15-300 V MOSFETs

Product

Applications

Current sensors – overview

Gate-driver ICs

IEC 62368-1

500-950 V MOSFETs

TLI4971 family

16

<2

260

TLE4971-A120N5-U-E0001

120

210

10

<2

260

✓

✓

3.3

Internal

TISON-8-5

TLE4971-A025T5-E0001

25

210

48

<2

260

✓

✓

3.3

Internal

TISON-8-6

TLE4971-A050T5-E0001

50

210

24

<2

260

AEC-Q100/

✓

✓

3.3

Internal

TISON-8-6

TLE4971-A075T5-E0001

75

210

16

<2

260

compliant

✓

✓

3.3

Internal

TISON-8-6

TLE4971-A120T5-E0001

120

210

10

<2

260

✓

✓

3.3

Internal

TISON-8-6

TLE4971-A025T5-U-E0001

25

210

48

<2

260

✓

✓

3.3

Internal

TISON-8-6

TLE4971-A050T5-U-E0001

50

210

24

<2

260

ISO 26262-

✓

✓

3.3

Internal

TISON-8-6

TLE4971-A075T5-U-E0001

75

210

16

<2

260

compliant/

✓

✓

3.3

Internal

TISON-8-6

TLE4971-A120T5-U-E0001

120

210

10

<2

260

✓

✓

3.3

Internal

TISON-8-6

31 [mT]

210391) [mV/mT]

1

90 [nT/√Hz]

✓

✓

3.3

external

TDSO-16✓✓

3.3

external

VSON-6

ISO 26262-

AEC-Q100/

UL 1577

IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules

210

Microcontrollers

75

USB-C controllers
and peripherals

TLE4971-A075N5-U-E0001

Power
management ICs

AEC-Q100

Digital isolators

TLE4971 family

TLE4972-AE35D5
TLE4972-AE35S5

31 [mT]

210391) [mV/mT]

1

90 [nT/√Hz]

AEC-Q100/
ISO 26262compliant

WBG semiconductors

TLE4972 family

Sensors1) Can be reprogrammed by customer

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Supportwww.infineon.com/current-sensors
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Solutions

Current sensors

Current
range[A]

Bandwidth
typ.
[kHz]

Sensitivity

Accuracy[mV/A][%]

Outputnoise density[µA/√Hz]

TLE4973-A025T5-S0001

27.5

210

65.5

<2

TLE4973-A050T5-S0001

55

210

32.8

TLE4973-A075T5-S0001

82.5

210

TLE4973-A120T5-S0001

132

TLE4973-R025T5-S0001

Classification

Industrial

Automotive

290

✓

✓

<2

290

✓

21.8

<2

290

210

13.7

<2

27.5

210

65.5

TLE4973-R050T5-S0001

55

210

TLE4973-R075T5-S0001

82.5

TLE4973-R120T5-S0001

SupplyCurrent
Rail

Package

5.0Internal

TISON-8-6✓

5.0Internal

TISON-8-6

✓

✓

5.0

Internal

TISON-8-6

290

✓

✓

5.0

Internal

TISON-8-6

<2

290

✓

✓

5.0

Internal

TISON-8-6

32.8

<2

290

✓

✓

5.0

Internal

TISON-8-6

210

21.8

<2

290

✓

✓

5.0

Internal

TISON-8-6

132

210

13.7

<2

290

✓

✓

5.0

Internal

TISON-8-6

TLE4973-R025T5-S0010

27.5

210

65.5

<2

290

✓

✓

5.0

Internal

TISON-8-6

TLE4973-R050T5-S0010

55

210

32.8

<2

290

✓

✓

5.0

Internal

TISON-8-6

TLE4973-R075T5-S0010

82.5

210

21.8

<2

290

✓

✓

5.0

Internal

TISON-8-6

TLE4973-R120T5-S0010

132

210

13.7

<2

290

✓

✓

5.0

Internal

TISON-8-6

TLE4973-R025T5-U-S0010

27.5

210

65.5

<2

290

✓

✓

5.0

Internal

TISON-8-6

✓

✓

5.0

Internal

TISON-8-6

✓

✓

5.0

Internal

TISON-8-6[V]

15-300 V MOSFETs

Product

Applications

Current sensors – overview

55

210

32.8

<2

290

TLE4973-R075T5-U-S0010

82.5

210

21.8

<2

290

TLE4973-R120T5-U-S0010

132

210

13.7

<2

290

✓

✓

5.0

Internal

TISON-8-6

TLE4973-AE35D5-S0001

34 [mT]

210531) [mV/mT]

1

70 [nT/√Hz]

✓

✓

5.0

external

TDSO-16

TLE4973-RE35D5-S0001

34 [mT]

210531) [mV/mT]

1

70 [nT/√Hz]

✓

✓

5.0

external

TDSO-16

TLE4973-RE35D5-S0010

34 [mT]210

53 [mV/mT]

1

70 [nT/√Hz]

✓

✓

5.0

external

TDSO-16

TLE4973-AE35S5-S0001

34 [mT]

210531) [mV/mT]

1

70 [nT/√Hz]

✓

✓

5.0

external

VSON-6

TLE4973-RE35S5-S0001

34 [mT]

210531) [mV/mT]

1

70 [nT/√Hz]

✓

✓

5.0

external

VSON-6

TLE4973-RE35S5-S0010

34 [mT]210

53 [mV/mT]

1

70 [nT/√Hz]

✓

✓

5.0

external

VSON-61)

1)

ISO 26262compliant/
AEC-Q100Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes

TLE4973-R050T5-U-S0010

Intelligent powerswitches and modules

ISO 26262compliant/
AEC-Q100/
UL 1577

Microcontrollers

ISO 26262compliant/
AEC-Q100

500-950 V MOSFETs

TLE4973 family

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

1) Can be reprogrammed by customer

Click here to learn more:
Supportwww.infineon.com/current-sensors
490

Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Sensors

WBG semiconductors

Our portfolio includes a broad range ofISO 26262-compliant products meeting safety requirements as SEooC (Safety Element out of Context) up to
the highest safety level of ASIL D, which are well perceived within the market and used in a wide range of
automotive and industrial safety applications.

USB-C controllers
and peripherals

Generally, magnetic sensors measure the strength and/or direction of an applied magnetic field which is generated by e.g. ferromagnetic materials and magnets,
inductive coils like in motors, etc. The information on
the measured field is processed within the sensor andconverted into strength, position, speed, angular and/or direction information. The processed sensor information is transmitted to the application via specific analog
or digital interfaces. A wide range of sensors is equippedwith additional safety and diagnostic features, andISO 26262-compliant developed.

SupportInfineon XENSIV™ sensors are exceptionally precise thanks
to an industry-leading magnetic technology portfolio. Our
benchmark and innovative magnetic sensor portfolio is theperfect fit for numerous customer applications in automotive, industrial and consumer markets. We offer all magnetic sensor technologies with in-house production, thus ourcustomers can choose between Hall sensors, AMR (Anisotropic Magneto Resistive), GMR (Giant Magneto Resistive)
or TMR (Tunnel Magneto Resistive) sensors in order to findtheir best-fit solution for their application.

Powermanagement ICs

Exceptionally precise magnetic sensors comprising industry-leading switches,linear, angle, 3D and speed sensors

Microcontrollers

Intelligent powerswitches and modules

Magnetic sensors

491

Solutions

Magnetic sensors

Applications

Magnetic switches

360

330

300

270

240

210

180

150

90

120

60

0

30

[°]

Angle

Product

Type

Operatingpoint BOP [mT]

Release point
BRP [mT]

Hysteresis
ΔBHY [mT]Automotive

Industrial

Consumer

TLE4961-1M/L

Latch

2.0

-2.0

TLE4961-2M

Latch

5.0

-5.0

4.0

✓

✓

✓

SOT23/SSO-3-2

10

✓

✓

✓

SOT23

✓

✓

SOT23/SSO-3-2

TLE4961-3M/L

Latch

7.5

-7.5

15

TLE4961-4M

Latch

10.0

-10.0

20

✓

✓

✓

SOT23

TLE4961-5M

Latch

15.0

-15.0

30

✓

✓

✓

SOT23

TLE4964-1M

Switch

18.0

12.5

5.5

✓

✓

✓

SOT23

TLE4964-2M

Switch

28.0

22.5

5.5

✓

✓

✓

SOT23

TLE4964-3M

Switch

12.5

9.5

3.0

✓

✓

✓

SOT23

TLE4964-4M

Switch

10.0

8.5

1.5

✓

✓

✓

SOT23

✓

✓

SOT23

TLE4964-6M

Switch

3.5

2.5

1.0

✓

TLE4964-5M

Switch

7.5

5.0

2.5

✓

✓

✓

SOT23

TLE4968-1M/L

Bipolar

1.0

-1.0

2.0

✓

✓

✓

SOT23/SSO-3-2✓

SOT23/SSO-3-2

TLI4961-1M

Latch

2.0

-2.0

4.0

–

✓

TLV4961-1M

Latch

2.0

-2.0

4.0

–

–

✓

SOT23

TLV4961-3M

Latch

7.5

-7.0

15.0

–

–

✓

SOT23

TLV4964-1M

Switch

18.0

12.5

5.5

–

–

✓

SOT23

–

✓

SOT23

Switch

28.0

22.5

5.5

–

500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes

Package✓

TLV4964-2M

Intelligent powerswitches and modules

HS3

HS2

Microcontrollers

N

HS2

USB-C controllers
and peripherals

HS1

Power
management ICs

S

Click here to learn more:
www.infineon.com/magnetic-switches

SupportHS3

Output signal

HS1

Applications– Window lifter– Power closing– Gear stick– Seat belt
– BLDC commutation(e.g. wiper, seat belt pretensioner, pump, seating)– Service robots– Power tools– White goods

WBG semiconductors

TLE/TLI/TLV496x-xM products come in the smallest SOT23
package, thus reducing height by 10 percent comparedwith on the market predecessor products. The sensors
also feature an integrated functionality test for better system control.

Features– Current consumption of just 1.6 mA– 3 to 32 V supply voltage range (over voltage
up to 42 V)– 7 kV ESD protection (HBM)– Overtemperature and overcurrent protection– Temperature compensation– Smallest SOT23 package on the market– Dedicated products for industrial applications(TLI496x) and consumer (TLV496x)– AEC-Q100 qualified

Sensors

The TLE/TLI/TLV496x-xM/L family of magnetic switches
saves energy and enables designers to create precise andcompact systems. With an operational current consumption of just 1.6 mA, TLE/TLI/TLV496x-xM/L products can cut
energy consumption by up to 50 percent, compared withsimilar competitor products. Thanks to its small magnetic
hysteresis, the family paves the way for precise switching
points in systems. The integrated temperature profile compensates magnetic drifts and enables stable performanceover temperature and lifetime.

15-300 V MOSFETs

Broadest energy saving portfolio of high precision magnetic switches
for automotive, industrial and consumer applications
TLE/TLI/TLV4961, TLE/TLI/TLV4964, TLE/TLI/TLV4968
Energy-efficient magnetic switch family for up to 32 V

492

Solutions

Magnetic sensors

15-300 V MOSFETs

By offering an excellent magnetic behavior Infineon’s
switches are ideally suited for:– Index counting application with a pole wheel– Rotor position detection (BLDC motors)– Open/close detection

500-950 V MOSFETs

TLE/TLI496x-xM are integrated Hall-effect sensors speciallydesigned for highly accurate applications. The sensors provide an easy-to-use and cost-effective solution for position
sensing applications, requiring high temperature stabilityof the magnetic threshold.

Applications

TLE/TLI4963, TLE/TLI4965
5 V high-precision automotive/industrial Hall-effect sensor

Gate-driver ICs

Target applications for TLE/TLI496x-xM are all low-power applications requesting a precision magnetic latch or
switch with a broad operating temperature range.

Release point
BRP [mT]

Hysteresis
ΔBHY [mT]Automotive

Industrial

Consumer

Package

TLE4963-1M

Latch

2.0

-2.0

4.0

✓

✓

✓

SOT23

TLE4963-2M

Latch

5.0

-5.0

10.0

✓

✓

✓

SOT23

TLE4965-5M

Unipolar switch

7.5

5.0

2.5

✓

✓

✓

SOT23

TLI4963-1M

Latch

2.0

-2.0

4.0

–

✓

✓

SOT23

TLI4963-2M

Latch

5.0

-5.0

10.0

–

✓

✓

SOT23

TLI4965-5M

Unipolar switch

7.5

5.0

2.5

–

✓

✓

SOT23

USB-C controllers
and peripherals

Operating point
BOP [mT]Power
management ICs

Type

Sensors

WBG semiconductors

Product

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

Features– 3.0 to 5.5 V operating supply voltage– Low current consumption 1.4 mA– ESD protection 4 kV HBM– Active error compensation (chopped)– High stability of magnetic thresholds– Low jitter (typ. 0.35 µs)– Operating temperature range:– from -40 to +170°C (TLE496x-xM)– from -40 to +125°C (TLI496x-xM)– Small SMD package SOT23– TLE: AEC-Q100 qualified– TLI: JEDEC qualified

Click here to learn more:
Supportwww.infineon.com/magnetic-switches
493

Solutions

Magnetic sensors

to-use and cost-effective solution for position sensing
applications.

15-300 V MOSFETs

The TLV496x-xTA/B Hall-effect sensor family comprises aline of magnetic switches for contactless position sensing.
The sensors are specially designed to provide an easy-

Applications

TLV496x-xTA / TLV496x-xTB
Precise Hall-effect sensor for consumer applications in leaded package

Gate-driver ICs

500-950 V MOSFETs

Features– 3.0 to 26 V operating supply voltage– Low current consumption 1.6 mA– ESD protection 4 kV HBM– Operating temperature range from -40 to +125 °C– Leaded package TO92S

Hysteresis ΔBHY
[mT]

Consumer

Package

TLV4961-1TA

Latch

2.0

-2.0

4.0

✓

TO92S-3-1

TLV4961-1TB

Latch

2.0

-2.0

4.0

✓

TO92S-3-2

TLV4961-3TA

Latch

7.5

-7.5

15.0

✓

TO92S-3-1

TLV4961-3TB

Latch

7.5

-7.5

15.0

✓

TO92S-3-2

TLV4964-4TA

Unipolar switch

10.0

8.5

1.5

✓

TO92S-3-1

TLV4964-4TB

Unipolar switch

10.0

8.5

1.5

✓

TO92S-3-2

TLV4964-5TA

Unipolar switch

7.5

5.0

2.5

✓

TO92S-3-1

TLV4964-5TB

Unipolar switch

7.5

5.0

2.5

✓

TO92S-3-2

TLV4968-1TA

Bipolar switch

1.0

-1.0

2.0

✓

TO92S-3-1

TLV4968-1TB

Bipolar switch

1.0

-1.0

2.0

✓

TO92S-3-2

Intelligent powerswitches and modules

Release point BRP[mT]Microcontrollers

Operating point
BOP [mT]

USB-C controllers
and peripherals

TypeSensors

WBG semiconductors

Powermanagement ICs

Product

IGBT discretes andsilicon power diodes

Digital isolators

Applications– BLDC motor commutation for consumer devices(e.g. e-bikes, fans, aircons)– Position detection e.g. flaps and control buttons

Click here to learn more:
Supportwww.infineon.com/magnetic-switches494

Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules

TLx4966 xG family
Two-in-one double Hall-effect sensor

USB-C controllers
and peripherals
WBG semiconductors

Powermanagement ICs

Applications– Window lifter– Sunroof– Automatic tailgate– Automated doors– Sun blinds

Sensors

Features– Two Hall probes in one package– Excellent matching between the two Hall probes– Hall plate distance of 1.45 mm– Outstanding quality– Information on direction and speed– TSOP6 package– AEC-Q100 qualified

Microcontrollers

Our XENSIV™ TLx4966 xG family features two integrated,calibrated sensor elements for detecting direction andcounting indexes in one device. This two-in-one featureeliminates the need for a second sensor, which in turncuts engineering and production costs. Using just one
sensor ensures perfect alignment of the sensor elements raising system quality and reliability.

Click here to learn more:
Supportwww.infineon.com/magnetic-switches
495

Solutions

Magnetic sensors

Applications

TLE4966V-1G
Vertical dual-Hall switch

15-300 V MOSFETs

offers high voltage capabilities with very small
current consumption. The product can be operated
from unregulated power supplies, which offers ourcustomers unique freedom of design for their system.
This product is AEC-Q100 certified and enables ourcustomers to build systems for the highest automotive
quality requirements.

500-950 V MOSFETs

The Infineon vertical double Hall-effect switch TLE4966V1G is a further development of the TLX4966-xG family.
Completely new is the verticalorientation of the Hall plates resulting into in-plane fieldsensitivity which enables entirely new application layouts.
Designed in a new technology, this device

Digital isolators

Gate-driver ICs

Features– Saves space– Easy mounting of sensor and PCB board– Allows increased mounting flexibility– Enables new, compact system designs
S
Magnetic encoder

S

N
S

Vertical Hall plate 2

Vertical Hall plate 1

Hysteresis
ΔBHY
[mT]

Automotive

Industrial

Consumer

Package

TLE4966G

Double Hall, speed
and direction
outputSpeed anddirection

7.5

-7.5

15

✓

✓

✓

TSOP6/
SSO-4-1

TLE4966L

Double Hall, speed
and direction
outputSpeed anddirection

7.5

-7.5

15

✓

✓

✓

TSOP6/
SSO-4-1

TLE4966-2G

Double Hall, two
independent
outputs

2 x speed

7.5

-7.5

15

✓

✓

✓

TSOP6

TLE4966-3G

Double Hall, speed
and direction
outputSpeed anddirection

2.5

-2.5

5.0

✓

✓

✓

TSOP6

TLE4966V-1G

Vertical double
Hall, speed anddirection output

Speed anddirection

2.5

-2.5

5.0

✓

✓

✓

TSOP6

TLI4966G

Double Hall, speed
and direction
outputSpeed anddirection

7.5

-7.5

15

–

✓

✓

TSOP6

Microcontrollers

Release point
BRP
[mT]

USB-C controllers
and peripherals

Operatingpoint BOP
[mT]

Power
management ICs

OutputWBG semiconductors

Type

Sensors

Product

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

N

Click here to learn more:
Supportwww.infineon.com/magnetic-switches
496

Solutions

Magnetic sensors

TLE/TLI/TLV49x6 products have proven success in many
automotive, industrial and consumer applications. The
family includes two-wire sensors with a current interface.

Features– Broad, successful family concept– Best in class quality– Chopped Hall system for high sensitivity– High jitter performance– SMD and leaded packages– Open collector or current interface– Temperature compensation– Up to 18 V supply– Dedicated products for industrial (TLI49x6)
and consumer applications (TLV49x6)– AEC-Q100 qualified (TLE products)

Applications– Power closing– Gear stick– Seat belt
– HVAC flap
– BLDC commutation– 2-wheeler application

Automotive

Industrial

Consumer

TLE4906K

Unipolar switch

10.0

8.5

TLE4906L

Unipolar switch

10.0

TLE4906-2K

Unipolar switch

TLE4906-3K

Package

1.5

✓

✓

✓

SC59/SSO-3-2

8.5

1.5

✓

✓

✓

SC59/SSO-3-2

18.0

12.5

5.5

✓

✓

✓

SC59

Unipolar switch

28.0

22.5

5.5

✓

✓

✓

SC59

TLE4946K

Latch

14.0

-14

28

✓

✓

✓

SC59

TLE4946-1L

Latch

15.0

-15

30

✓

✓

✓

SSO-3-2

TLE4946-2K

Latch

2.0

-2.0

4.0

✓

✓

✓

SC59/SSO-3-2

TLE4946-2L

Latch

2.0

-2.0

4.0

✓

✓

✓

SC59/SSO-3-2

TLE4976-1K

Unipolar switch/
Current interface

9.25

7.25

2.0

✓

✓

✓

SC59

TLE4976-2K

Unipolar switch/
Current interface

4.5

2.7

1.8

✓

✓

✓

SC59

TLV4976-2K

Unipolar switch/
Current interface

4.5

2.7

1.8

–

–

✓

SC59

Intelligent powerswitches and modules

Hysteresis
ΔBHY [mT]Microcontrollers

Release point
BRP [mT]

USB-C controllers
and peripherals

Operatingpoint BOP [mT]Powermanagement ICs

Type

Sensors

WBG semiconductors

Product

IGBT discretes andsilicon power diodes

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

The TLE49x6, TLI49x6, and the TLV49x6 family comprises
high-precision, unipolar Hall-effect switches and latches
for different magnetic sensitivities.

15-300 V MOSFETs

Applications

TLE49x6 / TLI49x6 / TLV49x6 family
High-precision magnetic switches

Click here to learn more:
Supportwww.infineon.com/magnetic-switches
497

Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Microcontrollers
USB-C controllers
and peripherals
Sensors

WBG semiconductors

XENSIV™ TLE493D-P2B6 is our latest magnetic 3D sensor
enabled by new and improved accuracy. It is the best product for high performance applications with respect to pricing and package size.

The TLE493D-P2B6 has an extremely low current
and wake-up function in a small package. Also thesensor provides options for configuration to fit best to
customer requirements (e.g. data communication,
definition of measurements, etc.). The safety manual
supports functional safety applications. The configurability of the sensor is used in application platforms
to adapt to end customer wishes. TLE493D-P2B6 isavailable in 4 different address variants ending with
A0, A1, A2 or A3. It’s possible to connect up to 4 sensors
to one I2C bus.

Powermanagement ICs

Infineon’s 3D magnetic sensors (TLx493D-xxBx) combine
high-accuracy magnetic field measurements with an extremely compact footprint and exceptionally low power
consumption (min. 7 nA). Our sensors open up a lot of exciting new use cases including innovative human-machineinterfaces in the form of industrial joysticks, ergonomic
pushbuttons on domestic appliances and highly precise
position control in robotics.

Intelligent powerswitches and modules

3D magnetic sensors

Click here to learn more:
Supportwww.infineon.com/3d-magnetics
498

Solutions

3D magnetic sensors

Applications

3D magnetic sensors

500-950 V MOSFETs

consumption, the TLx493D-xxBx can be used in new
applications, replacing potentiometer and opticalsolutions. Featuring contactless position sensing andhigh-temperature stability of the magnetic measurement, the sensor allows systems to get smaller, moreaccurate, and more robust.

Qualification

Linear magnetic
range

Resolution

IDD

Update rate XYZ
measurement

Package

Ordering code

TLI493D-A2B6-40 … 105°C

JESD47±100 mT±160 mT7.7 or 15.4
LSB12/mT

7 nA – 3.4 mA

up to 8.4 kHz

TSOP6SP001689844

7.7, 15.4 or
30.8 LSB12/mT

7 nA – 3.4 mA

up to 11.6 kHzWFWLB-5-2

SP005409964
SP005409966
SP005409968
SP005409970

TLI493D-W2BW A0
TLI493D-W2BW A1
TLI493D-W2BW A2
TLI493D-W2BW A3-40 … 125°C

JESD47±50, ±100 or±160 mT

TLV493D-A1B6-40 … 125°C

JESD47±130 mT (typ)10.2 LSB12/mT

7 nA – 3.7 mA

up to 3.3 kHz

TSOP6SP001286056

TLV493D-A2BW-20 … 85°C

JESD47±50, ±100 or±160 mT

7.7, 15.4 or
30.8 LSB12/mT

7 nA – 3.4 mA

up to 11.6 kHzWFWLB-5-2

SP005542151

New features– Advanced operation modes to provided a highflexiblitity– Short mode range setting, focusing on the half ofthe magnetic range, ensuring higher accuracy– Higher update frequency allows for an application fieldthat requires faster update speed– Angular mode (for x and y measurement only)
Click here to learn more:

IGBT discretes andsilicon power diodes
Microcontrollers

Temperature
range

USB-C controllers
and peripherals

Product

I²C interface– Bx, By and Bz linear field measurement up to ±160 mT– JESD47 qualified– 12-bit data resolution for each measurement direction– Various resolution options from 32 to 130 µT/LSB12– Operating temperature range from -40 to +125°C

Applications– Anti tempering protection in smart meters– Joysticks– CCTV-control, game consoles– Control elements e.g. white goods multifunction knobs– Ergonomic push- and control buttons on
domestic appliances and power tools– Position control in robotics– Smart lock position detection

Supportwww.infineon.com/3d-magnetics

Powermanagement ICs

Features– 3D magnetic sensing– Integrated temperature sensing– Low current consumption– 7 nA in power-down mode
– 2.8 to 3.5 V operating supply voltage– Digital communication via a 2-wire standardIntelligent powerswitches and modules

Linear movement

WBG semiconductors

3D movement

Sensors

Rotation movement

Digital isolators

Gate-driver ICs

The TLx493D-xxBx sensor realizes accurate threedimensional sensing with extremely low power consumption in a small package. Capable of detecting the magnetic
field in the x, y, and z-direction, the sensor is ideally suitedfor the measurement of linear, rotation, or 3-dimensional
movements. Thanks to its small package and low power

15-300 V MOSFETs

For consumer and industrial markets

499

Solutions

3D magnetic sensors

Applications

3D magnetic sensors

15-300 V MOSFETs

For automotive applications-40 … 125°C

TLE493D-W2B6 A0
TLE493D-W2B6 A1
TLE493D-W2B6 A2
TLE493D-W2B6 A3

Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes

Resolution

IDD

Update rate XYZ
measurement

Wake-up

Package

Ordering
code

AEC-Q100±160 mT±100 mT

130 µT/LSB12
65 µT/LSB12 1)

7 nA – 3.4 mA

Up to 8.4 kHz

No

TSOP6

SP001689848-40 … 125°C

AEC-Q100
ISO 26262-ready±160 mT±100 mT

130 µT/LSB12
65 µT/LSB12 1)

7 nA – 3.4 mA

Up to 8.4 kHz

Yes

TSOP6

SP001655334
SP001655340
SP001655344
SP001655348-40 … 125°C

AEC-Q100/
ISO 26262-ready±160 mT±100 mT

130 µT/LSB12
65 µT/LSB12 1)

TSOP6SP005557415
SP005557413
SP005557411
SP005557408

7 nA – 3.4 mA

Up to 11.6 kHz

YesIntelligent powerswitches and modules

TLE493D-A2B6

TLE493D-P2B6 A0
TLE493D-P2B6 A1
TLE493D-P2B6 A2
TLE493D-P2B6 A3

Linearmagnetic
range

Microcontrollers

Qualification

USB-C controllers
and peripherals

Temperature
range– Top column modules e.g. direction indicator,
wiper control– Gear stick position sensing– Multi-function knobs– Pedal/valve position sensing

1) Short range mode

With the TLE493D-W2B6/ P2B6 A0-A3, a 3D sensor familywith an enhanced dynamic wake-up feature was developed. Four pre-programmed address options (A0-A3) areavailable, enabling a fast start-up initialization when usedin I2C bus configurations.

Our sensors include enhanced test options, and safety
documentation is available to enable the usage of thissensor in the context of ASIL B systems.
Compared to the previous products of this family the
TLE493D-P2B6 A0-A3 family offers enhance precision inx-, y-, z- sensing direction, while otherwise featuring thesame dynamic wake-up features, programmability, andtest options like TLE493D-W2B6 A0-A3.

Sensors

The XENSIV™ sensor TLE493D-A2B6 features include a sensor address read-back feature for additional communication verification, a short range mode focusing to half of themagnetic range, ensuring higher accuracy, and an angularmode (for x and y measurement only).

Powermanagement ICs

Product

Applications– Control elements for infotainment/navigation
systems, air-conditions, multifunctional steering
wheels, seat controls

WBG semiconductors

Features– 3D magnetic sensing– Integrated temperature sensing– 2.8 to 3.5 V operating supply voltage– Low current consumption– 7 nA in power-down mode
– Up to 10 power modes– Digital output via a 2-wire standard I2C interface– Bx, By and Bz linear field measurement ±160 mT– AEC-Q100 qualified– 12-bit data resolution for each measurement direction– Various resolution options from 65 to 130 µT/LSB12– Operating temperature range from -40 to +125°C

500-950 V MOSFETs

Infineon’s TLE493D-x2B6 enables automotive control element applications within the passenger compartment or
under the hood with a temperature range of -40 to +125°C, with linear magnetic range requirements up to ±160 mT.

Click here to learn more:
Supportwww.infineon.com/3d-magnetics
500

Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs

Highest accuracy over a wide temperature range andlifetime is achieved by an integrated digital temperatureand stress-compensation. The chip is available in a thin
8-pin SMD single sensor package.

SupplyCBUF
Sub analog regulator

Digital regulator

VDD

GND

Main HADC
Main
Hall

A
DSP 1
D

Main S-sensing element

WBG semiconductors

Main T-sensing element
EEPROMSub bias
Sub HTS-ADC
Sub
Hall

IGBT discretes andsilicon power diodes

ROM 1

Main bias

Powermanagement ICs

Main analog regulator

Intelligent powerswitches and modules

characteristics. TLE4999C features a digital Short-PWMCode (SPC) interface, with a bus-capability for up to 4
sensor ICs on a single data output. The communicationinterface with min. 0.5 µs unit time guarantees a fasttransmission of complete 2 channel data signal in lessthan 500 µs. The additionally implemented frame holder
circuit enables the synchronicity of multiple sensors(e.g. in combination of angle sensors) via a SPC bus.
The chip offers a 12, 14 and 16-Bit resolution of theoutput signal, ensuring highest flexibility and superior
noise performance.

USB-C controllers
and peripherals

Infineon’s TLE4999C8 is a programmable dual channel linear
Hall sensor designed to meet the requirements of safety critical automotive and industrial applications. It is developedin full compliance with ISO 26262 by means of two sensor
elements included within one monolithic silicon design. In
order to fulfill the state-of-the-art safety requirements on
system level and enable ASIL D system developments thesensor cells are designed in a complementary way. Their signals follow two independent analog paths. Each signal path
has its own digital signal processing unit to ensure maximum independency (redundancy respectively). The sensor
offers a multi-point calibration with up to 9 selectable set
points for enhanced linearization of the output signal. Foran easy and flexible adaptation to non-linearity of magnetic
circuit design, the chip provides 5 different calibration

Microcontrollers

Programmable dual channel linear Hall sensor with fast SPC interface for highprecision applications

Digital isolators

Gate-driver ICs

Linear sensors

A
DSP 2
D

SPC
encoder

OUT

Sensors

SICI
Sub T-sensing element
ROM 2
Sub S-sensing element

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Linear sensors

15-300 V MOSFETs
500-950 V MOSFETs

Industrial applications– Small home appliances– Joystick applications

Gate-driver ICs

Key benefits– High diagnostic coverage, ISO 26262-compliancy anddual sensor cell integration enable development of failoperational systems– Multi-point calibration for better fit into various magnetic
circuit designs– Easy system integration due to programmabilityof several sensor parameters

Applications

Applications
Automotive safety critical applications– Electric power steering– Linear movement position sensing– Pedal position– Electric throttle control– Seat rail adjustment– Headlight adjustment

Digital isolators

Features– Fully ISO 26262-compliant, supports ASIL D systems– < 2 % sensitivity drift, < 100 µT offset drift
overtemperature and life time
– Integrated digital temperature- and stresscompensation– Fast digital SPC interface (unit time 0.5–3.0 µs)– Multi-point calibration with up to 9 linearization
set points

Magnetic
offset drift[µT] 1)

Classification

Ordering code

Package

TLE4997A8D

Analogratiometric50, 100, 200±60 mV/mT default
for 100 mT range,
with gain 1.5±3±4< ±400

ISO 26262-ready

SP000902760

TDSO-8

TLE4998P8D

Digitalinterface
PWM

50, 100, 200±48 LSB12/mT
default for 100 mT
range, with gain 1.5±2±4< ±400

ISO 26262-ready

SP000902776

TDSO-8

TLE4998S8D

Digitalinterface
SENT

50, 100, 200±48 LSB12/mT
default for 100 mT
range, with gain 1.5±2±4< ±400

ISO 26262-ready

SP000902784

TDSO-8

TLE4998C8D

Digitalinterface SPC

50, 100, 200±48 LSB12/mT
default for 100 mT
range, with gain 1.5±2±4< ±400

ISO 26262-ready

SP000902768

TDSO-8

TLE4999I3

Digitalinterface
PSI5

12.5, 25±147.5 LSB13/mT
default for 25 mT
range, with gain 1.5

±2

±7.59

< ±100/< ±2002)

ISO 26262-compliant

SP001689862

SSO-3

TLE4999C8(TLE4999C8-S0001)

Digitalinterface SPC

25, 50±36.875 LSB12/mT
default for in 50 mT
range, with gain 1.0

±2

±7.59

< ±100/< ±20022)

ISO 26262-compliant
ASIL D (ASIL C)

SP002662500(SP005727371)

TDSO-8

TLE4999C4(TLE4999C4-S0001)

Digitalinterface SPC

25, 50±36.875 LSB12/mT
default for in 50 mT
range, with gain 1.0

±2

±7.59

< ±100/< ±2002)

ISO 26262-compliant
ASIL D (ASIL C)

SP003420076(SP005727375)

SSO-4Intelligent powerswitches and modules

Gain

Microcontrollers

Sensitivity
drift
[%]

Sensitivity

USB-C controllers
and peripherals

Magnetic
linear range
[mT]

Power
management ICs

Interface

WBG semiconductors

Sales name

IGBT discretes andsilicon power diodes

ISO 26262-ready / compliant dual channel linear sensors

Sensors1) Maximum drift over temperature and life time2) Main channel/sub channel

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Linear sensors

Features– Best-in-class accuracy with low drift of output signal temperature range lifetime (including stress compensation in
TLE4998)– Programmable transfer function (gain, offset), clamping,bandwidth, and temperature characteristics– AEC-Q100 qualified– Available in various packages including SSO-3-9 with two
integrated capacitors to improve ESD and ESC behavior– TLE4997, TLE4998 ISO 26262-readyApplications– Detecting linear and angular position– Detecting pedal and throttle position– Steering torque measurement– Headlight leveling– High-current sensing– Seat position and occupant detection– Suspension control– Detecting gear stick/lever positions– Detecting liquid levels in fuel tanks– Current sensing e.g. for battery management

TLE4997

EEPROM

3/Single die
SMD 8

TLE4998P

EEPROM

TLE4998S

TLE4998C

Magnetic
offsetSupply voltage(extendedrange)

Automotive±12.5 to±300 mV/mT< ±400 µT

5 V ±10% (7 V)

3/4/ Single
die SMD 8±0.2 to±6%/mT< ±400 µT

EEPROM

3/4/ Single
die SMD 8±8.2 to±245 LSB12/mT

EEPROM

3/4/ Single
die SMD 8±8.2 to±245 LSB12/mT

Classification

Interface

Package✓–

AnalogSSO-3-10
TDSO-85 V ±10% (16 V)✓

ISO 26262-ready

PWM

SSO-3
SSO-4
SSO-3 (2 capacitors)
TDSO- 8< ±400 µT

5 V ±10% (16 V)✓

ISO 26262-ready

SENT

SSO-3
SSO-4
SSO-3 (2 capacitors)
TDSO-8< ±400 µT

5 V ±10% (16 V)✓

ISO 26262-ready

SPC

SSO-3
SSO-4
SSO-3 (2 capacitors)
TDSO-8

Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules
Microcontrollers

Sensitivity(programmable
range)

USB-C controllers
and peripherals

Number of
pins

Power
management ICs

Programm.

WBG semiconductors

Product

Thanks to digital signal processing based on a 20-bit DSP
architecture plus digital temperature compensation,these sensors deliver outstanding temperature stability
compared with similar compensation methods. TLE4998
also includes stress compensation to withstand stresseffects from the package, such as moisture, thus ensuring best-inclass accuracy over the device’s lifetime.

500-950 V MOSFETs

These high-precision 12-bit resolution linear Hall sensors feature EEPROM memory for flexible programming
across a wide range of parameters.

Gate-driver ICs

Infineon’s family of TLE499x linear Hall ICs is tailored to theneeds of highly accurate angular and linear position detection and current measurement applications. Each productmeasures the vertical component of a magnetic field andoutputs a signal that is directly proportional to the magnetic field. These programmable linear Hall sensors come withdifferent interface options: TLE4997 features ratiometricanalog output, while TLE4998P comes with pulse widthmodulation (PWM), TLE4998S with single edge nibble transmission (SENT), and TLE4998C with short PWM codes (SPC).

15-300 V MOSFETs

Applications

TLE499x family:
programmable analog/digital single channel linear Hall sensor family

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TMR technology enhances position sensing with its
precise, high signal-to-noise ratio, enabling the useof smaller, cost-effective magnets. Its low power consumption suits battery-powered devices, while its
hysteresis-free characteristic ensures accuracy during
rapid directional changes. High integration density also
allows for the miniaturization of sensors, making TMR
ideal for compact applications.

Gate-driver ICs

Block diagram

15-300 V MOSFETs

The TLI5590-A6W is a dual-channel radiometric gradiometer designed for highly precise measurements. It meets the
JEDEC JESD47K standard for industrial and consumer use.
Its compact, green packaging facilitates miniaturized designand detailed measurements. The device achieves exceptional accuracy, surpassing 10 µm when coupled with an appropriate magnet for linear or rotary encoder. Additionally, it
ensures superior channel matching with less than 5 % variation across the full magnetic input spectrum of ±5 mT.

500-950 V MOSFETs

Linear TMR sensor
For consumer and industrial markets

Applications

SolutionsLinear sensors

VP2
VN2

IGBT discretes andsilicon power diodes

VP1
VN1

Digital isolators

VDD

y
x

Intelligent powerswitches and modules

GND
Magnetization direction

USB-C controllers
and peripherals

Microcontrollers

Applications– Linear and angular incremental position sensing inindustrial and consumer applications with highest
accuracy requirements– Lens positioning for zoom and focus adjustingin cameras

Rotary position measurement

Powermanagement ICs

Features– High signal-to-noise ratio allows small andcost-effective magnet design– Low power consumption is beneficial for battery
supplied applications– High temperature-stable measurements make it
perfect choice for use in harsh environments– Hysteresis-free transfer characteristic allows accuratesensing where fast changing direction changes occur– Higher integration density reduces the sensor size to support miniaturization and position sensing in
microsystems

Product

Temperature
range [°C]

Sensitivity
bridge 1/2

Linear magnetic
range [mT]Interface

Current

Supplyvoltage [V]Package

Ordering code

TLI5590-A6W-40 to 125

18/9 mV/V/mT±5

Analog

1 mA at 3.3 V

1–5.5

WFWLB-6-3

SP005631773

Sensors

WBG semiconductors

Linear position measurement

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Angle sensors

Applications

Angle sensors
Compact designs in small outline packages – at highest functional safety

GMR, AMR and TMR based angle sensors

500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules

The large portfolio of Infineon angle sensors is equallysuited to meet ready-to-use industrial and consumer applications like robotics or gimbal and highly safety critical automotive applications such as braking or steering.

Microcontrollers

Infineon’s TLE5501, is a fast analog TMR-based angle sensor
dedicated to automotive applications.

Product

Technology

Die configuration

Sin/cos output

Angle output

Second interface

Accuracy

Classification

Package

TLE5009

GMR

Single die

Analog sin/cos

–

–

0.9°

ISO 26262-ready

DSO-8

TLE5009A16(D)GMR

Dual dieAnalog sin/cos

–

–

1.0°

ISO 26262-ready

TDSO-16

TLI5012B

GMR

Single die

SSC (SPI)SSC (SPI)PWM/IIF/SPC/HSM

1.9°

JESD47

DSO-8

TLE5012B(D)

GMR

Single & dual die

SSC (SPI)SSC (SPI)PWM/IIF/SPC/HSM

1.0°

ISO 26262-readyDSO-8/
TDSO-16

TLE5014C16(D)

GMR

Single & dual die

–

SPC

–

1.0°

ISO 26262-compliant

TDSO-16

TLE5014P16(D)

GMR

Single & dual die

–

PWM

–

1.0°

ISO 26262-compliant

TDSO-16

TLE5014S16(D)

GMR

Single & dual die

–

SENT

–

1.0°

ISO 26262-compliant

TDSO-16

TLE5014SP16(D)

GMR

Single & dual die

–

SPI

–

1.0°

QM
ISO 26262-compliant

TDSO-16

TLE5109A16(D)

AMR

Single & dual die

Analog sin/cos

–

–

0.5°

ISO 26262-ready

TDSO-16

TLE5309D

AMR + GMR

Dual dieAnalog sin/cos––

AMR 0.5°,
GMR 1.0°

ISO 26262-ready

TDSO-16

TLE5501

TMR

Single die

Analog sin/cos

–

–

1.0°

ISO 26262-compliant

DSO-8

Sensors

SPI = Serial peripheral interface
IIF = Incremental interface
PWM = Pulse width modulation

USB-C controllers
and peripherals

evant applications. The two-channel analog TMR angle sensor
TLE5501, the digital GMR angle sensor family TLE5014 andthe high-precision AMR-based TLE5109 products are among
the latest additions to the growing sensor portfolio, which
includes all common technologies and is designed for both,industrial and automotive applications.

Infineon’s broad portfolio of GMR sensors are ideal for awide range of angle applications, such as BLDC motors
or steering angle sensors. They are pre-calibrated andready-to-use. Different levels of signal processing integration from the straight forward TLE5012B to the highly
complex and programmable TLE5014 enable designers to
optimize system partitioning.

Powermanagement ICs

Infineon offers a large variety of high-precision angle sensors
in all common technologies such as AMR (Anisotropic Magnetoresistive), GMR (Giant Magnetoresitive) and also TMR (Tunnel
Magnetoresitive). The xMR technologies are complementary.
Addressing any kind of rotation applications, Infineon’s sensor
portfolio consists of products with analog and digital outputs,
as single and dual-chip variants and as products for safety-rel-

The TLE5109A16 AMR based products address the need forvery precise, fast and yet cost-efficient angle measurement
at the highest functional safety levels in automotive andindustrial applications. These include position measurement in brushless DC motors (BLDC) for pumps, wipers or
brakes, position measurements of valves, flaps or pedals
and steering angle measurement.

WBG semiconductors

Angle sensors detect the orientation of an applied magnetic
field by measuring sine and cosine angle components withmonolithically integrated magneto resistive elements.

15-300 V MOSFETs

Their fields of use range from steering angle applications, with the highest functional safety requirements,
to motors for wipers, pumps and actuators and electricmotors in general.

Highest variety – low end to high end, standardized andspecialized in various technologies: GMR, AMR and TMR

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Angle sensors

TLE5501

Gate-driver ICs

Infineon’s TMR sensor TLE5501 is available in two versions.

IGBT discretes andsilicon power diodes

Digital isolators

TLE5501 – product versions with different pin out:
– TLE5501 E0001: pin-compatible to TLE5009
automotive qualified acc. AEC-Q100– TLE5001 E0002: decoupled bridges for redundant external angle calculation and highest diagnostic coverage,
realizing ISO 26262-compliant development ASIL D

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

Applications– Steering angle sensor– BLDC motor commutation (e.g. wipers, pumps
and actuators)– Angular position sensing for e.g. robotics or gimbal– Electric motors– Industrial automation– Safety applications

Sensors

WBG semiconductors

Powermanagement ICs

Features– Large output signals of up to 0.37 V/V for direct
microcontroller connection– Discrete bridge with differential sine and cosine
output– Very low supply current: ~2 mA– Magnetic field range (20–100 mT)– Typ. angle error ~ 1.0° (over temperature andlifetime)– DSO-8 package– AEC-Q100, grade 0: TA = -40 … +150°C(ambient temperature)– For TLE5501 E0002:– Reaching ASIL D with just one single sensor chip
– ISO 26262-compliant development ASIL D

15-300 V MOSFETs

In addition, TMR technology shows a very low temperature drift, reducing external calibration and compensation efforts. The TMR technology is also well known for
its low current consumption.

500-950 V MOSFETs

Tunneling magnetoresistive (TMR) technology is offeringhigh sensing sensitivity with a high output voltage, reducing the need for an internal amplifier. Thus, the sensor canbe connected directly to the microcontroller without any
further amplification.

Applications

TMR based angle sensors

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Angle sensors

Intelligent powerswitches and modules
Microcontrollers
USB-C controllers
and peripherals

Y

A/D

SPI

Power
management ICs

A/D

WBG semiconductors

S

SensorsN

X

CORDIC

Applications– Steering angle sensing (SAS)– Motor commutation– Rotor position measurement– Pedal position– Safety applications– Any other kind of high-accuracy position
measurement

IGBT discretes andsilicon power diodes

Features– Easy-to-use, plug-and-play sensors, pre-configured andpre-calibrated– Offering high flexibility:– Available as single and dual die products– 12-bit digital interface with protocol options PWM,
SENT, SPC and SPI– E2 PROM and look-up table for customer
configuration and calibration– High angle accuracy: max. 1.0° over temperature andlifetime– High voltage capability up to 26 V
– Development fully compliant with ISO 26262– Developed acc. ASIL D level– Dual die sensors reaching ASIL D, single die sensors
ASIL C metrics– Safety manual and safety analysis summary report available on request

500-950 V MOSFETs

All products are ready for applications with the highest
functional safety requirements. The sensors show an
extremely small angle error of less than 1° across theentire temperature profile and lifetime. This is particularly helpful in applications with the need for very
accurate position sensing such as steering angle sensing
or motor commutation. Further application areas
range from rotor position measurement, electric power
steering (EPS), pedal position to any other kind of position measurement.

Gate-driver ICs

All XENSIV™ TLE5014 angle sensors are available assingle and dual die products. The products come pre-configured and pre-calibrated as plug-and-play sensors andare easy to use. Customers can choose between the interfaces SENT, PWM, SPC, and SPI.
On top of those protocol options, the sensors can beadapted to any kind of application setup via their programmable E²PROM interfaces. TLE5014 magnetic angle sensors
meet ISO 26262 ASIL C for the single die and ISO 26262 ASIL
D for the dual die versions.

Digital isolators

TLE5014(D)Digital GMR sensor with an easy-to-use plug-and-play concept for highest
functional safety applications

15-300 V MOSFETs

Applications

GMR based angle sensors

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Angle sensors

Applications

GMR based angle sensors

A/D

Y

A/D

500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes

SPI

S

Microcontrollers

CORDICN

X

Applications– Steering angle– Brushless DC motor commutation, i.e. electric power
steering (EPS)– Rotary switches– General angular sensing– Incremental or absolute magnetic encoders– Gimbals, drones, robots

Intelligent powerswitches and modules

Features– Integrated angle calculation with CORDIC algorithm– 15-bit representation of calculated angle value– High update rate up to 43 µs (23 kHz)– Range of selectable interfaces– SPI compatible Synchronous Serial Communication (SSC)– Bi-directional communication up to 8 Mbit/s– Pulse Width Modulation (PWM)– Hall Switch Mode (HSM) for motor commutation– Incremental Interface (IIF)– Temperature compensation and auto-calibration
algorithm– Diagnostic function for sensor elements and circuitry
with PRO-SIL™ support– Dual die SMD package (redundancy)– ISO 26262-ready– Available as single and dual die product– Industrial version TLI5012B in line with JEDEC JESD47

15-300 V MOSFETs

TLE5012B(D), TLI5012B
GMR sensor with integrated angle calculation and multiple interfaces

АMR based angle sensors

USB-C controllers
and peripherals

TLE5109A16(D)Analog AMR sensor with temperature compensation

X

cos

Y

sin

WBG semiconductors

Powermanagement ICs

Features– Features a differential or single-ended analog interface
for sine and cosine values– Internal temperature drift compensation for gain and offset– Also available as a dual-sensor package– ISO 26262-ready– Available as single and dual die productN
Sensors

S

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Angle sensors

Applications

Combined AMR and GMR based angle sensors

The output voltages are designed to use the dynamic
range of an A/D-converter using the same supply as
the sensor as voltage reference. Both sensor ICs aresupplied independently by separate supply and ground
pins.

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

Summary of features– Separate supply pins for AMR and GMR sensor– Diverse redundant design with one GMR sensor (top die)and one AMR sensor (bottom die) in one package– Low current consumption and very fast start up– 360° contactless angle measurement– Immune to air gap variations due to MR based sensing
principle– Operating ambient temperature:-40 … +125°C/-40 … +150°C (TLE5309DHT)
Potential applications

Microcontrollers

time and low overall power consumption enables thedevice to be employed for low-power turn counting. Extremely low power consumption can be achieved withpower cycling, where the advantage of fast power ontime reduces the average power consumption.
– BLDC motors for electric power steering (EPS)– Low-power turn counter

USB-C controllers
and peripherals

The TLE5309D angle sensor is designed for angular
position sensing in safety critical automotive applications.
Its high accuracy and 360° measurement range combinedwith short propagation delay makes it suitable for systems
with high speeds and high accuracy demands such as brushless DC (BLDC) motors for actuators and electric power
steering systems (EPS). At the same time its fast start-up

Powermanagement ICs

Diagnostic functions in combination with AMR and GMR diversity supports ASIL D applications
Rotor position for motor commutation
SupplyEPS rotor

WBG semiconductors

TLE5309DECU
GMR sensor

SupplySensor magnet
Turn info, position forplausibilization

Low power IC(always on)

Turn count,plausibilization angle
Sensors

AMR sensor

500-950 V MOSFETs

The differential MR bridge signals are independent of
the magnetic field strength, and the analog output isdesigned for differential or single ended applications.

Gate-driver ICs

The TLE5309D is a diverse redundant angle sensor withanalog outputs. It combines a Giant Magneto Resistance(GMR) sensor for full 360° angle range with an Anistropic
Magneto Resistance (AMR) sensor for high precision in aflipped configuration in one package. Sine and cosine angle components of a rotating magnetic field are measuredby Magneto Resistive (MR) elements. The sensors provide
analog sine and cosine output voltages that describe themagnetic angle in a range of 0 to 180° (AMR sensor), and 0
to 360° (GMR sensor), respectively.

15-300 V MOSFETs

TLE5309D
Dual angle sensor combining AMR and GMR technology

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Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators

or encoder structure to measure linear or rotational
speed and position. Hall sensor measuring rotational
speed with a gear tooth and a magnetic encoder wheel.
The majority of sensors also feature additional benefits
such as integrated capacitorsfor high EMC robustness
and the highest levels of ESD protection.

Typical application of a magnetic differential sensor

Gear wheel

USB-C controllers
and peripherals

S
S

IGBT discretes andsilicon power diodes

Infineon’s Hall-, GMR- and TMR-based magnetic speed
sensors are designed to measure speed in safety andpowertrain applications such as speedometers, ABS,
camshafts/crankshafts, and automatic transmissions.
They are also used in similar applications in the industrial sector. The sensors use a ferromagnetic gear toothIntelligent powerswitches and modules

Easy to use, robust and cost-effective sensors for speed measurement

Microcontrollers

Magnetic speed sensors

Magnet wheel

N
N

Signalprocessing
circuitryS (N)Sensor cell 2

Sensor cell 1

Permanent magnet

Signalprocessing
circuitrySensor cell 2

WBG semiconductors

Sensor cell 1Powermanagement ICs

S

N (S)
Encoder wheels

Sensors

Back-bias magnet

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Speed sensors

providing a good air gap performance and switching
accuracy. Its hidden adaptive hysteresis and calibration
algorithm enable good accuracy over air gap jumps andimmunity to vibration and run-out events.

Features– Large operating air gap capability– Flexible mounting (also known as twistindependent mounting)– Hidden adaptive hysteresis– Low current consumption– Reverse magnetic polarity capability– Advanced protection technology– Reverse voltage protection at VS-pin– Short-circuit protection– Overtemperature protection– Wide operating temperature ranges of-40°C ≤ Tj ≤ ±150°C– High ESD robustness up to ±4 kV HBM– 3-wire PWM voltage interface

Applications– Industrial applications– Two-wheeler and automotive vehicle speed

Powermanagement ICs
WBG semiconductors

Features– Differential Hall speed sensor to measure speed andposition of tooth/pole wheels– Easy to use single chip solution in SSO-3-92– Symmetrical switching point in the middle of the
tooth/magnetic pole
– South and north pole pre-induction possible– Digital output signal (voltage interface)– Fast start-up time
– Reverse voltage protection at VS-pin– Short-circuit and over temperature protection of output– Automotive operating temperature range

start up. The sensor combines a fast power up time withhigh accuracy and sensitivity for large operating air
gaps. Qualified for automotive temperature range andmeets the requirements of harsh environmental conditions prevalent in automotive applications.
The TLE4927C comes with the SSO package with two
integrated capacitors.

Sensors

Infineon’s TLE4927C detects the motion and positionof ferromagnetic and permanent magnet structuresby measuring the differential flux density of the magnetic field. A self-calibration mode ensures optimum
accuracy in running mode in just a few transitions after

USB-C controllers
and peripherals

TLE4927C E6547
Differential Hall effect crankshaft sensor with hidden adaptive hysteresis

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

This sensor is specially designed to provide an easy-to-use,robust and cost-effective solution for vehicle or industrial
speed sensing applications. The TLE4922 can therefore, beback-biased using a simple, low-cost bulk magnet, while

15-300 V MOSFETs

Applications

TLE4922
Highly robust, easy-to-use mono-Hall speed sensor with twist-independent
mounting

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Solutions

Speed sensors

TLE4922

Mono-Hall

TLE4927
TLE4929

15-300 V MOSFETs
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules
Microcontrollers
USB-C controllers
and peripherals

Automotive

Industrial

ProtocolAEC-Q100–✓✓Single pulse✓

Differential Hall

AEC-Q100–✓✓Single pulse✓

Differential Hall

AEC-Q100✓✓✓

PWM, Single pulse

✓

Power
management ICs

Direction
detection

RoHS

WBG semiconductors

Classification

Sensors

Sensor technology

Digital isolators

Features– Differential Hall speed sensor to measure speed and position of tooth/pole wheels– Ease of use single chip solution in SSO-3-52– Switching point in the middle of the tooth enables backward compatibility– Robustness over magnetic stray-field due to thedifferential sensing principle– Precise miss fire detection through excellent jitter
performance– Dedicated hybrid engine algorithm keeps combustion
engine calibrated during an electric drive cycle– Digital output signal with programmable outputprotocol including diagnosis interface– Direction detection and stop-start-algorithm– High accuracy and low jitter– High sensitivity enables large air gap– End-of-line programmable to adapt engine parameters– Can be used as a differential camshaft sensor– Pre-programmed version TLE4929C-XAN available,
TLE4929C-X2A available for 2-wheeler applications– Automotive operating temperature range

Product

500-950 V MOSFETs

and helps to avoid misfiring or ECU error messages
caused by wrongly calibrated sensor data. Also, thecompatible 3-pin-package allows a one-to-one-replacement of the former generation of crankshaft sensors
without direction detection, TLE4924/25/26/27/28,
widely backward compatible functionality through flexible EEPROM configuration of parameters, means former
TLE492x-family can be mimicked.

Gate-driver ICs

The TLE4929 is an active differential Hall sensor ideallysuited for crankshaft applications and similar industrial
applications, such as a speedometer or any speed sensor
with excellent accuracy and low jitter capabilities. It as welladdresses new requirements for crankshaft speed sensing
from hybrid powertrains. An advanced vibration detection
algorithm ensures valid sensor data for any hybrid powertrain traction. This improves efficiency of the engine start

Applications

TLE4929
Fully programmable crankshaft sensor with direction detection

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Speed sensors

Gate-driver ICs

500-950 V MOSFETs

15-300 V MOSFETs

Applications– Wheel speed sensing in automotive applications– Antilock braking systems (ABS)– Electronic stability programs (ESP)– Automatic transmissions– iTPMS TLE5041plusC, TLE5045iC and TLE5046iC

Digital isolators

Nowadays, wheel speed sensors have to support anever-growing list of applications. Years ago, ABS systems
simply needed to know if a wheel was blocked, and then
ESC used the accurate speed of all four wheels for its corrections. Since then, an increasing number of modules in
the car take the wheel speed into account for their intelligent functions. The electrical parking brake, for example,
needs to know about every inch a car moves when it’s supposed to be stationary, and iTPMS uses sophisticated algorithms to determine if a wheel lacks air pressure, and eventhe central locking locks the doors after a couple of meters
and the radio turns up the volume in line with increasing
speed. All of the above rely on accurate information fromthe wheel speed sensor.

Applications

Safety first – wheel speed sensors

TLE4941plusC / TLE4942-1C / TLE4943C
My car, how fast and far does it drive?

IGBT discretes andsilicon power diodes
Microcontrollers

Features– Family of Hall sensors available with and without
direction detection– Excellent stray field robustness

As a single chip sensor it magnetically measures thecars wheel speed with its differential Hall technology,
making it the ideal all-purpose sensor, equally suitablefor pole wheel and steel wheel applications. Thesesensors are immune towards any kind of undesiredmagnetic stray fields, ferromagnetic particles or otherdisturbances, because of their differential principle.

Intelligent powerswitches and modules

The TLE4941plusC, our bestseller is an industry standard
for wheel speed sensing. TLE4942-1C and TLE4943C arecomplementing this sensor with additional direction information using PWM or AK protocol, respectively.

Steel wheel

TLE4941plusC

Hall differential✓✓

TLE4942-1C

Hall differential✓

TLE4943CHall differential✓

Classification

Direction
detection

ProtocoliTPMS

ISO 26262-compliant–

Standard–✓

ISO 26262-compliant

✓

PWM

–

✓

–

✓

AK

–

Power
management ICs

Pole wheel

WBG semiconductors

Sensor technology

Sensors

Product

USB-C controllers
and peripherals

Applications– Pole wheel applications– Steel/tooth wheel applications by using backbias magnet

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Solutions

Speed sensors

Applications

TLE5045iC / TLE5046SiC
High end GMR wheel speed sensors

15-300 V MOSFETs

self-diagnostics.
TLE5045iC and TLE5046SiC are developed according
ISO 26262 to fulfill ASIL B, supporting ASIL D systems.
The TLE5046SiC with direction detection is available
with PWM or AK protocol.

500-950 V MOSFETs

The TLE5045iC/TLE5046SiC is our next generation
wheel speed sensor family, based on GMR technology.
The family consists of a designed-to-cost speed-only
TLE5045iC, and a high-end TLE5046SiC providing not
only direction detection but also offering true
“zero-speed” capability as well as possibilities ofIntelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

Gate-driver ICs

Features– One family of speed sensors for all wheel speed
sensing applications in same package– Best in class in sensitivity, jitter and duty cycle,
independent from magnetic target wheel– “Zero speed” capability– ISO 26262-compliant ASIL B development, supporting
ASIL D systems– Multiple protocol variants with and without
self-diagnosis functionality– Integrated circuitry for improved EMC and ESD
robustness even without external capacitor

Pole wheel

Steel wheel

TLE5045iC

iGMR differential✓–

TLE5046SiC-PWM

iGMR differential✓

TLE5046SiC-AK

iGMR differential✓

Classification

Direction
detection

ProtocoliTPMS

ISO 26262-compliant–

Standard✓–

ISO 26262-compliant

✓

PWM

✓

–

ISO 26262-compliant

✓

AK

✓

USB-C controllers
and peripherals

Sensor technology

Sensors

WBG semiconductors

Powermanagement ICs

Product

Microcontrollers

Applications– Pole wheel applications– Autonomous driving (e.g. park assist)

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Solutions

Speed sensors

TLE4955(C)Leading the way in vibration robustness

USB-C controllers
and peripherals

a similar algorithm plus dynamic self-calibration, jitterand sensitivity levels as our proven TLE4953, thus
ensuring accurate speed measurements in the harshest ofenvironments for both fine and coarse target wheels. Designers can choose different interface protocol versions.

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Applications– Automatic transmission systems– Industrial speed sensing using current interface

TLE4955 family of differential Hall sensors speciallydesigned to meet the latest requirements in transmission vibration suppression. It provides best-in-classvibration suppression for applications, that require a
two-wire current interface. The TLE4955 family provides

15-300 V MOSFETs
Digital isolators

Gate-driver ICs

Features– Detection of rotation direction– Highly accurate speed measurements fromzero to 12 kHz over large operating air gaps
– Excellent vibration suppression– Broad operating temperature range– AEC-Q100 qualified

500-950 V MOSFETs

self-calibration algorithm ensure outstanding measurement results with both fine and coarse target wheels. As
with other Infineon speed sensors, the south and northpoles can be pre-inducted. TLE4953 features a current
interface and comes in a two-wire package with an integrated 1.8 nF overmolded capacitor for improved EMC.

Microcontrollers

The differential Hall sensor TLE4953C can detect
direction and was developed specifically to meet theneeds of high-end transmission applications. Its jitter
performance and high sensitivity enables designers tocreate high-accuracy systems with excellent vibration
suppression. Adaptive hysteresis and the dynamic

Applications

TLE4953C
Two-wire transmission speed sensor

WBG semiconductors

Powermanagement ICs

Features– Detection of rotation direction– Best-in-class vibration suppression– Highly accurate speed measurements from zero
to 12 kHz over large operating air gaps
– Broad operating temperature range– Four different interface protocols– AEC-Q100 qualified

Sensors

Applications– Automatic transmission systems– Industrial speed sensing using current interface

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strayfields it is the ideal match not only for traditionaltransmissions but also particularly for hybrid applications.
While TLE4959C is provided with the standard protocol, theFX version gives access to different protocols (e.g. speedonly) as it is to be programmed at the customer’s premises.

500-950 V MOSFETs

With our TLE4959 you now can also address your 3-wireapplications with the latest state-of-the art technology
of IFX transmission sensors. Differential Hall sensor
TLE4959 is your choice when you need a 3-wire-sensor
with direction detection and active vibration suppression. Beside it’s outstanding air gap and best of classHall jitter performance, with it’s high immunity against

Digital isolators

Gate-driver ICs

Features– Active vibration suppression– Highly accurate speed measurements from 0 Hz to
10 kHz over large operating air gaps
(up to 20 k for -FX)
– Common three-wire voltage interface– Broad operating temperature range– AEC-Q100 qualified– FX version customer programmable (protocol,
hysteresis level)

IGBT discretes andsilicon power diodes

Applications– Automatic (hybrid) transmission systems

Microcontrollers

integrated differential Hall speed sensor ideally suitedfor transmission applications. Its basic function is toprovide rotational speed and direction of rotation
information to the transmission control unit.
Sophisticated vibration suppression with excellent air
gap performance. TLE4959-5U (FX) includes a sophisticated algorithm which actively suppresses vibration
while keeping excellent air gap performance.

USB-C controllers
and peripherals

State-of-the-art 4-wire transmission speed sensor
with direction detection. The TLE4959-5U (FX) is anIntelligent powerswitches and modules

TLE4959-5U, TLE4959-5U-FX
State-of-the-art 4-wire transmission speed sensor with direction detection
XENSIV™ TLE4959-5U and TLE4959-5U-FX are 4-wirevoltage interface differential Hall speed sensors for transmission speed applications with vibration suppression anddirection detection output. The FX version flexible in terms
of protocol, it offers customer programmable EEPROM.

15-300 V MOSFETs

TLE4959C, TLE4959C-FX
State-of-the-art three-wire transmission speed sensor with direction detection

Applications

Solutions

Speed sensors

WBG semiconductors

Powermanagement ICs

Features– Voltage interface– Active vibration suppression– Direction detection output– Dynamic self-calibration– 0 Hz capability– FX: flexible protocol through customer programmable EEPROM

Sensors

Target applications– Automatic transmission applications– Transmission applications with speed with direction detection
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Solutions

Speed sensors

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

Gate-driver ICs

Features– True power on functionality (TPO)– Programmable switching points– Pre-programmed temperature coefficient for SmCoback-bias magnet– Single chip solution in SSO-3-9 package– Twist independent mounting (TIM) for larger
fabrication tolerances– Advanced performance by dynamic self-calibrating
principle– High accuracy and high stability of the magnetic
switching points– High resistance to mechanical stress– Digital output signal (voltage interface)– Short-circuit protection– Enhanced ESD performance– AEC-Q100 qualified

15-300 V MOSFETs

points. This ensures its true power on capability (TPO)
even in the case of production spreads such as different
magnetic configurations or misalignment. Additionally,a self-calibration algorithm has been implemented
to achieve optimum accuracy during normal running
operation. The TLE4984C/83C come in a three-pin
package SSO-3-9 that has two integrated capacitors forenhanced EMC and micro break performance.

500-950 V MOSFETs

The TLE4983C, TLE4984C are active Hall sensors ideallysuited for camshaft applications in automotive. Its basic
function is to map either a tooth or a notch of a gear intoa unique electrical output state, while the magneticallybipolar TLE4983C can map also a magnetic encoder
wheel. The implemented electrical trimming option forpost-fabrication trimming sets the sensor’s switching

Applications

TLE4983 / TLE4984
Mono-Hall based camshaft speed and position sensors

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Solutions

Speed sensors

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

Gate-driver ICs

Features– Hall switching sensor to measure speed or phaseof pole/tooth wheels– Digital output signal (voltage interface)– Mono-cell chopped Hall system– TPO true power on functionality– TIM twist independent mounting– Dynamic self-calibrating algorithm– IST individual switching threshold– End-of-line programmable switching points– EEPROM for various algorithm options– TC of back-bias magnet pre-programmed– High resistance to mechanical stress– Enhanced immunity against ESD and EMC– Improved µ-cut capability– Enhanced operating temperature range– Module package SSO-3-52

15-300 V MOSFETs

such as different magnetic configurations or misalignment. Additionally, a self-calibration algorithm has
been implemented to achieve optimum accuracy during
normal running operation, which by its EEPROM isadaptable in various performance affecting parameter.
It comes in a three-pin SSO-3-52 package for the supply
voltage and an open drain output.

500-950 V MOSFETs

The TLE4986C is an active Hall sensor ideally suited for
camshaft applications and similar industrial applications such as speedometer. Its basic function is to map
either a tooth or a notch into a unique electrical output
state. It has an electrical trimming option for post-fabrication trimming in order to achieve true power on(TPO) capa­bility even in the case of production spreads

Applications

TLE4986
Mono-Hall based camshaft speed and position sensor

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Solutions

Speed sensors

TLE4983

Mono-Hall

TLE4984

15-300 V MOSFETs
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules
Microcontrollers

Automotive

Industrial

Protocol

RoHS

SmCo

✓

✓

Single pulse✓

Mono-Hall

SmCo

✓

✓

Single pulse✓

TLE4986

Mono-Hall

SmCo

✓

✓

Single pulse✓

TLE4988

Mono-Hall

SmCo, NdFeB, Fe✓✓

Single pulse✓

USB-C controllers
and peripherals

Magnet TC

Powermanagement ICs

Sensor technology

Sensors

WBG semiconductors

Product

Digital isolators

Features– Digital output signal (voltage interface)– True power on functionality (TPO)– Auto TPO – automatic in car calibration– Improved switching level/phase accuracy– TC range including ferrite– High speed digital interface for diagnosis / test
– Twist independent mounting (TIM)– EEPROM for algorithm options and ID– Increased ESD and EMC immunity, improvedµCut feature– Digital magnet temperature compensation– Mechanical stress compensation– Module package SSO-3-52

500-950 V MOSFETs

a most accurate start up sensing in real application
environment is ensured addressing tolerances offerromagnetic wheels and magnetic encoders, aswell as mounting tolerances of the sensor. Infineon’s
TLE4988C products are available optimized for the usewith three different backbias magnet materials, suchas Fe, SmCo and NdFeB. All products come inside thewell-established camshaft sensor package SSO-3-52,
allowing low design switch effort in terms of package
and performance compatibility with predecessor products.

Gate-driver ICs

The Infineon XENSIV™ TLE4988C products featureadvanced camshaft sensing performance andimproved application adaption. One major benefitof the advanced sensor performance is the reduced
dependence from rare-earth backbias magnets formodule manufacturers. The TLE4988C has proven right
performance with a ferrite backbias magnet for all
relevant parameters such as phase jitter, phase accuracy or speed effect across key temperature, air gap
and rpm ranges. With automatic in car TPO calibration

Applications

TLE4988C
Mono-Hall based camshaft speed and position sensor with reduced
dependence on rare-earth backbias magnets

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Solutions

Speed sensors

High flexibility is offered by the FX version which provides a programmable EEPROM. This sensor offers many
protocol options established in transmission applications over the last decades. Additionally, it offers to
configure the sensor algorithm (e.g. magnetic threshold,vibration robustness) to fully optimize the sensor
performance to the target wheel.

15-300 V MOSFETs
500-950 V MOSFETs
Power
management ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Features– High magnetic field sensitivity enables ultra-low jitterover high operating air gap range– Two wire PWM current interface– Direction detection– Vibration suppression (active via protocol
suppression; passive via adaptive hysteresis)– Differential sensing principle enables magnetic strayfield robustness– Equipped with sintered ferrite back-bias magnets andalgorithm optimized for toothed wheel applications– Package options for top and side read mounting makebending of sensor leads obsolete– EMC robust without the need of capacitors on sensor
leads– Comprehensive digital diagnostic interface, enabling
readout of internal signals and electronic chip ID– Customer configurable EEPROM in FX version

Gate-driver ICs

The "iCB-top" family members are designed for toothed
wheel applications and have a ferrite back-bias magnet
attached. It comes in a RoHS compliant two-pin-package, qualified for automotive usage. It is recommended
to use the iCB-top within an overmolded module. For
magnetic encoder (ME) applications, other sensors –called ME family – are available.

Digital isolators

The TLE5555iC is a differential magnetic speed sensor
based on tunnel magnetoresistive (TMR) sensing technology. This technology enables best-in-class jitterand air gap performance and allows sensing flexibility
in top and side read configuration. Its basic function
is providing information about the rotational speed
and the direction of the rotation to the transmission
control unit. Therefore, the sensor family includes a
sophisticated algorithm which actively suppress
vibration. The output has been designed as a two-wirecurrent interface based on a PWM (pulse width modulation) principle. The TLE5555iC operates without
external components and is fully EMC-compliant thanks
to its capacitor integrated on silicon level.

Applications

TLE5555iC(B)State-of-the-art TMR transmission speed sensor for pole/toothed wheel in top/side read configuration with/without back-bias magnet

Sensors

WBG semiconductors

Potential applications– Ideal for the use in harsh environments, particularly
automotive transmissions– Suitable for all kinds of transmission systems
including DHT (dedicated hybrid transmission) andEV (electric vehicle) concepts

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IGBT discretes andsilicon power diodes

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

15-300 V MOSFETs

Applications

Solutions

Speed sensors

Available variants

TLE5555iC ME E0

For polewheel (top + side-read), E0 protocol

SP003883456

SSO-2-51

TLE5555iC ME E1

For polewheel (top + side-read), E1 protocol

SP005832719

SSO-2-51

TLE5555iC ME E4B

For polewheel (top + side-read), E4B protocol

SP005829763

SSO-2-51

TLE5555iCB E0-top

For steelwheel (top-read), E0 protocol, incl.
backbias magnet

SP003883500

SSOA22-2-51

TLE5555iCB E1-top

For steelwheel (top-read), E1 protocol, incl.
backbias magnet

SP005401486

SSOA22-2-51

TLE5555iCB E4B-top

For steelwheel (top-read), E4B protocol, incl.
backbias magnet

SP005832705

SSOA22-2-51

Sensors

WBG semiconductors

Powermanagement ICs

ISO 26262compliant

PackageIntelligent powerswitches and modules

Classification SP Number

Microcontrollers

Description

USB-C controllers
and peripherals

Product

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Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules
Powermanagement ICs

The sensor element and its integrated circuits (IC) are
the heart of pressure sensor technology. Infineon’s
small pressure sensor IC chips support various applications with best-in-class performance. Infineon is one of
the world’s largest semiconductor pressure sensor andtransducer manufacturers, thanks to a varied portfolioof absolute air pressure sensor ICs. Our comprehensive
family of XENSIV™ sensors includes a wide selection ofpressure-sensitive sensors tailored specifically to theautomotive, consumer and industrial sectors. XENSIV™
sensors are compact, designed to save energy, and offer
a rapid time-to-market – a perfect fit for any performance and integrity need.

Sensors

Infineon XENSIV™ pressure sensors measure thepressure of air and gases across various industries andapplications. In their function as a pressure transducer
sensor, they convert physical pressure into an electric
signal. Infineon XENSIV™ pressure sensors combine thefunctions of sensing (via a pressure sensor element)
and conversion into an electrical signal (via an absolutepressure transducer and signal processing) in one
integrated silicon device.

WBG semiconductors

For automotive, industrial and consumer applications – ensure the perfect fit for
all performance and integrity needs

USB-C controllers
and peripherals

Microcontrollers

Pressure sensors

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Solutions

Pressure sensors

15-300 V MOSFETs

Applications

Infineon XENSIV™ BAP sensors are calibrated for specific automotive applications, especially for BMS thermal runaway detection, pneumatic seats and electronic engine control.
The BMS sensors are ISO 26262-compliant and support highest ASIL requirements on
system level.

Gate-driver ICs

500-950 V MOSFETs

Powertrain systems have to fulfill the constantly increasing stringent media requirements.
Environmental legislation aims to deliver cleaner air by ensuring a steady global decrease
in CO2 emissions. Thanks to their accurate measurement capability, Infineon MAP
and turbo MAP product with analog or digital interface enable engines to meet these requirements.

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

Typical safety-related automotive pressure sensing applications such as side impact andpedestrian protection call for the highest quality and accuracy standards withfull ISO 26262 compliance. Every year thousands of pedestrians are severely injured intraffic due to slow or failing sensing elements.
Our Infineon XENSIV™ safety pressure sensor family includes integrated pressure sensors
that tick all these boxes with PSI5 peripheral sensor interfaces for safety-critical use cases.
Our sensors support new safety systems, increasing the protection of pedestrians and car
occupants in the event of a collision.

USB-C controllers
and peripherals

Microcontrollers

Infineon’s tire pressure sensors perform all of the functions necessary to implement a
state-of-the-art module for a Tire Pressure Monitoring System (TPMS). As part of our
XENSIV™ pressure sensors portfolio, our SP49 TPMS sensor ICs are easy to integrate andfeature a microcontroller, sensors, wireless communication, and convenient peripherals.
They only need a few passive components and a battery to complete a full automotive
TPMS sensor assembly.

Sensors

WBG semiconductors

Powermanagement ICs

Our family of digital barometric pressure sensors also gives designers the best choice
when it comes to mobile and wearable devices. Highlights include small form factors tofacilitate system integration, highest precision and relative accuracy over a wide
temperature range, fast read-out speeds via the serial I²C/SPI interface, and low power
consumption to ensure longer battery lifetimes.

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Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules
Microcontrollers
USB-C controllers
and peripherals

Absolute pressure sensors (MAP and BAP)WBG semiconductors

highest quality and accuracy standards with full
ISO 26262 compliance. Our XENSIV™ family includes
integrated pressure sensors that tick all these boxes
with PSI5 peripheral sensor interfaces for a safetycritical use case.

Sensors

Infineon’s pressure sensors offer the highest quality andaccuracy for safety-relevant automotive, industrial, or
consumer lifestyle applications. Typical safety-relaedautomotive pressure sensing applications such asside-impact and pedestrian protection call for thePowermanagement ICs

Highest accuracy and precision on the smallest footprint and energy bill

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Solutions

Pressure sensors

Applications

KP21x / KP22x – Analog manifold air pressure sensor family (MAP + turbo MAP)

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

15-300 V MOSFETs

Features– Manifold air pressure measurement – MAP and turbo MAP– Excellent accuracy of up to 1.0 kPa over a large
temperature range– Ratiometric analog voltage output proportional
to the applied pressure– Output signal fully compensated over pressure andtemperature– Pressure range from 10 to 400 kPa– Temperature range from -40 to +140°C– Output clamping (optional)– Complete product family available with multiple
transfer function– Reverse polarity protection– Green SMD package

KP276 – Media robust MAP sensor with digital interface
Features– Media robustness for current automotive
requirements– Digital single edge nibble transmission (SENT)interface (282 clock ticks)– Excellent accuracy of ±0.77% FSS– Temperature range -40 to +170°C (170°C for 20 min.
max., 150°C operating)– Integrated NTC temperature sensor functionality with
fast start up time (typ. 10 ms)– Green SMD package

Max. accuracy[kPa]

Max. operating
temperature [°C]

Automotive

Industrial

Classification

Pressure range
[kPa]

KP21x

1.0

140

✓

✓

–

10 … 150

KP22x

2.5

140

✓

✓

–

10 … 400

KP23x

1.0

125

✓

✓

–

15 … 115

KP236N6165

1.0

125

✓

✓

–

60 … 165

KP276

3.0

150 (170 time limited)

✓

✓

–

10 … 400

Sensors

Product

WBG semiconductors

Integrated pressure sensor ICs for manifold and barometric air pressure

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules– Pressure range from 15 to 165 kPa– Temperature range from -40 to +125°C– Serial service interface– Open bond detection (OBD) for supply and GND– Reverse polarity protection– Green SMD package

Powermanagement ICs

Features– Absolute air pressure measurement– Excellent accuracy of 1.0 kPa over a large
temperature range– Ratiometric analog voltage output proportional
to the applied pressure– Output signal fully compensated across pressure andtemperature range

IGBT discretes andsilicon power diodes

KP23x – Analog barometric air pressure (BAP) sensor family

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Pressure sensors

KP46x – Digital barometric air pressure family in new DFN-8 package

15-300 V MOSFETs

Applications

Features– High accuracy pressure sensing– Pressure range according to different application needs:– ECU/MAF (40–115 kPa)
– Pneumatic seats (60–165 kPa)
– BMS thermal runaway (45–200 kPa)
– ISO 26262 compliance for KP467 (ASIL B)– Operating ambient temperature range -40 … +125°C,
KP467 up to 105°C– Best-in-class low power consumption with dedicatedpower-down mode for energy saving– 10-, 12- or 14-bit resolution pressure and temperature
values via SPI interface and backwards compatibility
to legacy devices KP25x and KP264– KP467 with autonomous low-power monitoring (LPM)
feature for pressure event detection and host wake-up– Integrated signal path diagnosis features

Gate-driver ICs
IGBT discretes andsilicon power diodes

Block diagram KP46x

Digital isolators– Green, small 4.5×5.1 mm 8-pin DFN package for all KP46x

500-950 V MOSFETs

Applications– KP464/KP464E for ECU and mass airflow sensing tocontrol fuel supply and injection, for air management
and ignition– KP465 for higher pressure levels e.g. within
compressed air in fuel-cell applications– KP466 for pneumatic seat comfort application– KP466P for pneumatic seat comfort application andthermal runaway detection in battery management
system for xEVs
– KP467 for thermal runaway detection in battery
management system for xEVs

Pressure cells
Digital signal
processing

SPI
interface

Tj_ADC

NCS
CLK
SDI
SDO

Intelligent powerswitches and modules

P_ADC

EEPROM

Reset

VPROG

GND

USB-C controllers
and peripherals

Voltageregulator

VDD

Microcontrollers

Temperature
sensorN.C.

P-accuracy-40°C

P-accuracy
0 … +85°C

P-accuracy+125°C

T-accuracy+25 … +85

[kPa]

[kPa]

[kPa]

[°C]

KP464

40 … 115

±1.5

±1.0

±1.5

±3

KP464E

40 … 115

±1.5

±1.0

±1.5

KP465

60 … 320

±5.0

±3.0

KP466

60 … 165±4.0

KP466P

60 … 165

±1.5

KP467

45 … 200±3.0 kPa (lifetime)±1.5 kPa (0h)±4 % of LPM threshold (±2 kPa max.)

1)

Supply current IVDDClassification[mA]

Supply current
power down
IVDD_PD[µA]

3.5 (without SPI comm.)

10

AEC-Q103±3

3.5 (without SPI comm.)

10

AEC-Q103±5.0±3

3.5 (without SPI comm.)

10

AEC-Q103

±1.0

±2.0

±3

5 (without SPI comm.)

10

AEC-Q103

±1.0

±1.5

±3

5 (without SPI comm.)

10

AEC-Q103±3– 3.5 mA (on mode
without SPI comm.)– typ. 50 µA (in LPM)

10AEC-Q103
ISO 26262-compliantPowermanagement ICs

Operatingpressure
range
[kPa]

WBG semiconductors

Product

Sensors

Normal mode/
diagnosis mode

1) Coming Q1/2025

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Solutions

Pressure sensors

Applications

KP497 – Advanced digital barometric air pressure and acceleration sensor

Product

KP497 1)

Operating pressurerange

P-accuracy

T-accuracy

[kPa]

[kPa]

[°C]

Typ. supply current
power down
at 25°C IVDD_PD[µA]

20 … 250

±2

±3

0.24

Classification

Digital isolatorsIntelligent powerswitches and modules

Applications– KP497 calibrated for thermal-runaway-detection inbattery management systems for xEVs by sensing
critical air pressure

IGBT discretes andsilicon power diodes– Determination of the economical value of thebattery over the course of its life cycle in relation tomechanical influences and shocks; with that essential
part of the information for battery passport for xEVs
and for reprocessing and reuse of batteries

Gate-driver ICs

500-950 V MOSFETs

15-300 V MOSFETs

Features– Pressure range for thermal runaway detection:
20–250 kPa– Integrated acceleration sensor for battery shockmonitoring– ISO 26262-compliant (ASIL A)– High accuracy pressure sensing– Operating ambient temperature range -40 … +105°C– Ultra low power consumption with dedicatedpower-down mode for energy saving– Autonomous low-power monitoring (LPM) featurefor event detection and host wake-up

AEC-Q100
ISO 26262-compliant

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

1) Coming Q1/2025

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Solutions

Pressure sensors

Applications

Side Crash Detection (SAB)

Memory– Calibration parameters– Sensor ID– Mode selection

Digital isolators

Gate-driver ICs

Intelligent state machine– Calibration– Protocol generation

Digital signal
processing

Intelligent powerswitches and modules

Analog digitalconverter

Sensor cell

IGBT discretes andsilicon power diodes– KP201 qualified for higher operating temperatures
up to 125°C– KP204 with 4-hole lid supporting insect intrusion
protection

Manchester
current
modulation

Microcontrollers

Voltage regulator

500-950 V MOSFETs

Features– Two-wire interface with on-chip current modulator for
PSI5 communication– Fully PSI5 compliant with support for multiple modes– Synchronous or asynchronous data transmission– EEPROM for unique ID number, calibration and mode
selection– Serial service interface for EEPROM programming– On-chip voltage regulator– Reverse polarity protection– Fully AK-LV29 and AK-LV38 compliant– Patented on-chip diagnosis of pressure cells andcircuitry– PRO-SIL™ support in line with IEC 61508 and ISO 26262– Green SMD package

15-300 V MOSFETs

KP200 / KP201 / KP204
PSI5 PRO-SIL™ ready pressure sensor ICs for side crash detection
and pedestrian protection

CS

CLK

Rx

USB-C controllers
and peripherals

Serial interface
Tx

Key features of KP201 and KP204

Classification

KP200 / KP201 / KP204

KP201 qualified for higher operating temperatures up to 125°C
KP204 with 4-hole lid supporting protection against insect intrusion

ISO 26262-readySensors

WBG semiconductors

Product family KP20x

Power
management ICs

Integrated pressure sensor ICs for manifold and barometric air pressure

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Solutions

Pressure sensors

1) ARM® and Cortex® are trademarks of ARM limited, UK

TPMS module

500-950 V MOSFETs
Microcontrollers

Intelligent powerswitches and modules

Features
Patented Glass-Silicon-Glass MEMS pressure sensor withbest in class media compatibility– Industry-standard power efficient 32-bit Arm® Cortex® 1)– 19 kB of flash memory for the application code and/or
user data storage; also usable for a bootloader– 1 kB RAM plus 192 bytes of retention RAM– Best in class lifetime charge consumption

Gate-driver ICs

For wired data transfer, the hardware master/slave I2C
interface can be used. Further wired interfaces such as
UART, SPI or PWM can be realized in software.
Infineon technical leadership in MEMS technology andPatented Glass-Silicon-Glass MEMS pressure sensor
with best-in-class media compatibility ensures industry
leading performance TPMS.

Customer benefits
Optimized for battery-powered applications, the system
controller with flexible wake-up and power management,ultra-low power down current and the wide range ofsupply voltage ensures a long-lasting battery lifetime (fortypical TPMS applications 10 years with a CR2032 battery).
Together with the possibility to generate a wake-up fromthe integrated Interval timer, SP49 products are perfectly
suited for standalone remote pressure sensing solutions
demanding low charge consumption. For such applications, the LF receiver with wake-up capability and bestin-class sensitivity provides the possibility of on-demandmeasurements.
SP49 has the tailored ASIC which optimized for thefollowing new intelligent tire features.
– On-tire auto-position-sensing (APS)– Tire filling assist– Tire burst detection– Load detection

Digital isolators

The Infineon SP49 product family provides highly integrated devices which perform all functions for a wheel
module of a tire pressure monitoring system (TPMS)
suited for high-volume applications. The devices measure pressure in the range from 100 kPa up to 920 kPa
and acceleration between -600g and 600g as well as
temperature and supply voltage. Furthermore, they
feature an efficient power management and an integrated microcontroller. An integrated LF receiver and RF
transmitter allows wireless communication.

IGBT discretes andsilicon power diodes

SP49 – Tire pressure monitoring sensors

15-300 V MOSFETs

Applications

Tire pressure sensors (TPMS)

USB-C controllers
and peripherals

3 V lithium cell

SP49
Power supply management

Acceleration sensor
ADC
Temperature sensor

32-bitmicrocontrollerRFtransmitter

SP49 fully supports all necessary
requirements for a tire pressure
monitoring system (TPMS)

Tx data
315/
434 MHz

Voltage sensor
ROM:firmwarelibrary

LF
receiverRx data
125 kHzWBG semiconductors

Flash:
sensor calibration
data and appl.
firmwarePower
management ICs

Pressure sensor

Product variant

Product namePressure range [kPa]

Flash size for code [kB]

Package

Ordering code

SP490-01-11

SP49

920

19

DSOSP-14-84

SP005878909

SP490-01-12

SP49i

920

19

DSOSP-14-84

SP005825051

SP49T-05-12

SP49iTruck

1600

19

DSOSP-14-84

SP005957469

Sensors

Product table

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Solutions

Pressure sensors

Applications

Pressure sensors for consumer and IoT

500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules

DPS368 offers the best-in-class resolution (±2 cm), avery fast read-out speed, and low current consumption.
The sensor can be used in harsh environments, as it isrobust against water (IPx8 - 50 m underwater for
1 hour), dust and humidity. The small package size saves
up to 80 percent of the space and makes the DPS368
ideal for mobile applications and wearable devices.

Typical applications– Drones: altitude detection and height stability– Health and fitness: accurate elevation gain andstep counting (e.g. for smartwatches)– Outdoor Navigation: GPS start-up time/accuracy
improvement; dead reckoning (e.g. in tunnels)– Indoor navigation: floor detection e.g. in shopping
malls and parking garages– Smart home: micro weather forecasting;room temperature control; intruder detection– Airflow control: Smart filter replacement alarm(e.g. in home appliances); predictive maintenance– Health care: fall detection; respiratory devices;
smart inhalers

Microcontrollers

Infineon’s digital barometric pressure sensor DPS368 is
the best choice for mobile and wearable devices due toits small form factor, high precision, and low power consumption. Pressure sensing is based on capacitive technology, which guarantees ultrahigh precision (±2 cm)
and excellent relative accuracy (±0.06 hPa) over a wide
temperature range. The sensor’s internal signal processor converts the output from the pressure and temperature sensor elements to 24-bit results. Each pressure
sensor has been calibrated individually and contains
calibration coefficients. The coefficients are used in
the application to convert the measurement results totrue pressure and temperature values. The sensor has
a FIFO that can store the last 32 measurements. Since
the host processor can remain in a sleep mode for alonger period between readouts, a FIFO can reduce thesystem power consumption. Sensor measurements andcalibration coefficients are available via the serial I2C/
SPI interface.

15-300 V MOSFETs

DPS368 – Digital barometric pressure sensor for mobile and wearable devices

Package size

2.0 x 2.5 x 1.1 mm

Operating pressure range

300 … 1200 hPa± 0.002 hPa (or ±0.02 m)

Relative accuracy± 0.06 hPa (or ±0.5 m)

Absolute accuracy± 1 hPa (or ±8 m)

Temperature accuracy

0.5°C

Pressure temperature sensitivity

0.5 Pa/K

Measurement time
Average current consumption
at 1 Hz sampling rate

3.6 ms (low precision); 27.6 ms (standard mode)
1.7 µA pressure measurement, 1.5 µA temp. measurement, standby 0.5 µA

Supply voltage

VDDIO: 1.2–3.6 V; VDD: 1.7–3.6 V

Operating modes

Command (manual), background (automatic), standby

Interface

WBG semiconductors

Pressure level precisionPowermanagement ICs-40 … 85°C

Sensors

Operating temperature range

USB-C controllers
and peripherals

Key product features

I²C and SPI, both with optional interrupt

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Solutions

Pressure sensors

Digital core

Digital interface

Calibration
coefficients

Capacitive
pressure sensor

I2C/SPI

15-300 V MOSFETs

Digital signal
processing

ADC

MUX

VDDIO
Memoryinterface

Voltageregulators

FIFO

VDD

500-950 V MOSFETs

Temperature
sensor

Applications

Functional block diagram

Gate-driver ICs

Application circuit example (in I2C configuration)
Processor
I2C serial interface
SCK
INT

R

VDDIO
VDDIO

Interrupt (optional)

SDI

VDDIO
GND

SCK

1.2 … 3.6 V
C

Digital isolators

SDA

Pressure sensor
SDO

GND

CSB

VDD

1.7 … 3.6 V
IGBT discretes andsilicon power diodes

R

Name

Function

1

GND

Ground

VDD

8

1

GND

2

CSB

Chip select

GND

7

2

CSB

3

SDI

Serial data in/out

4

SCK

Serial clock

VDDIO

6

3

SDI

SDO

5

4

SCK

Vent hole

5

SDO

Serial data out

6

VDDIO

Digital interface supply

7

GND

Ground8

VDD

Analog supply

Microcontrollers

Pin

USB-C controllers
and peripherals

Pin configuration (top view)Intelligent powerswitches and modules

C

Infineon inside pressure sensor partners

WBG semiconductors

Powermanagement ICs

Building upon its best-in-class technology, Infineon offersa full range of barometric pressure sensors as chipsets.
Infineon’s network of global partners offers customers
a comprehensive portfolio of Infineon inside pressure
sensors that will propel performance to the next level evenfor the most demanding applications.

Sensors

Learn more about our partner program and purchase our partner solutions here.

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Solutions
Applications
15-300 V MOSFETs
Gate-driver ICs

500-950 V MOSFETs

MEMS for consumer and industrial applications
Infineon’s XENSIV™ MEMS microphones are designed for
capturing audio signals with unprecedented
precision and quality. The microphones comprise
Infineon’s MEMS microphone chips and ASICs which are
the world’s best-selling microphone components.
Due to advanced technical characteristics, highquality standards, and robustness at the chip level,

Typical applications include speech (hands-free/e-call/ICC),
voice commands with microphone arrays and beamforming, active and road noise cancellation, and detection of event sounds, sirens, contact, and road conditions.
The extended availability of these silicon devices matches
the typical long lifecycle of a vehicle, revolutionizing theuse of ATV microphones for a wide range of applications.

Intelligent powerswitches and modules
Microcontrollers
USB-C controllers
and peripherals

MEMS microphones for automotive applications
We also offer high-performance MEMS microphones
qualified to the AEC-Q103-003 automotive quality standard. They are suited for all applications inside and outside the car where the best audio performance in harsh
automotive environments is required. The extended
availability of these silicon devices matches the typicallong lifecycle of a vehicle.

Powermanagement ICs

Dedicated digital and analog MEMS mics
Our digital and analog MEMS microphones for consumer
applications bring a studio-quality audio experienceto smartphone or earbud form factors, for instance.
Our automotive-qualified solutions, on the other hand,enable the best audio performance in harsh automotive
environments improving the in-cabin user experienceand passenger comfort. Additionally, they enhanceautonomous driving features and contribute to roadsafety.

XENSIV™ MEMS microphones add ‘hearing’ to many consumer applications (earbuds, headphones, wearables,
smart speakers, laptops, tables, etc.) as well as in industrial and medical applications (predictive and preventive maintenance, security, patient monitoring systems,etc.). High SNR MEMS microphones play a pivotal role in
AI audio applications like STT (speech-to-text), by capturing nuanced voice data.

Sensors

XENSIV™ MEMS microphones are setting new performance benchmarks across a growing number ofindustries. These innovative silicon microphones aredesigned to extend the benefits of the lowest possible self-noise (high SNR) and lowest distortion to anever-expanding number of applications.

WBG semiconductors

Infineon XENSIV™ MEMS microphones redefine a growing number of use cases

IGBT discretes andsilicon power diodes

Digital isolators

MEMS microphones for consumer, industrial,
and automotive applications

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Infineon’s XENSIV™ MEMS microphones are designed
for capturing audio signals with unprecedented precision and quality. The microphones are comprised ofInfineon’s MEMS microphone chips and ASICs which are
not without reason the world’s best-selling microphonecomponents.

ASIC

Package

Single backplate technology (SBP)
Single Backplate technology (SBP) represents anindustry standard for mid-end microphones with its
simplicity and robustness. The SBP technology offers
the best performance-to-cost ratio especially for small
package sizes and SNR values up to 69 dB SNR.

Sealed Dual Membrane (SDM)
Sealed Dual Membrane (SDM) is Infineon’s revolutionary
MEMS microphone technology that utilizes two
membranes and a charged stator to create a sealed
low-pressure cavity and a differential output signal.
The architecture enables ultra-high SNR (up to
75 dBSNR) and very low distortions and delivers highingress protection (IP57) at a microphone level. SelectSDM technology for best-in-class acoustic performancein medium and larger packages.

IGBT discretes andsilicon power diodes

the amplitude and frequency of incoming sound waves.
The resulting change in voltage is measured, processedand output by an integrated analog or digital ASIC.
Infineon distinguishes two main MEMS technologies:

Intelligent powerswitches and modules

MEMS microphones use an electrically charged backplate and a membrane to form a capacitive sound transducer. The flexible membrane moves proportional to

Microcontrollers

Infineon XENSIV™ MEMS microphones shape the industry on the technology level

USB-C controllers
and peripherals

tions which achieve the best possible performance andare optimized to each application.

Powermanagement ICs

Infineon owns all building blocks of MEMS microphones
allowing to develop MEMS, ASIC and package combina-

Digital isolators

Gate-driver ICs

MEMS

500-950 V MOSFETs

Infineon microphone system

15-300 V MOSFETs

MEMS microphones technology

Applications

Solutions

MEMS microphones

Sensors

WBG semiconductors

E21400

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Solutions

MEMS microphones technology

Applications

MEMS microphones for automotive applications
Qualified according to automotive standard, AEC-Q103-003

500-950 V MOSFETs
Gate-driver ICs
IGBT discretes andsilicon power diodes

Digital isolatorsstable performance in extremely loud environmentsof exterior use cases 1)– Best in class audio performance (SNR, AOP, THD)
for optimum speech quality and capture of distortion-free audio signals in loud environments such as
inside a car

Intelligent powerswitches and modules

1) Depending on selected product. See parameter table below for details.

Customer benefits of automotive qualified microphones– Reduced re-qualification cost for Tier 1 due to minimized risk of qualification fails– Longer available parts enable platform concepts at Tier1/OEM

Quality– Quality assured for the whole vehicle life by running qualification tests at three different
temperatures over the full operating temperature range (-40°C … +105°C)– Compliance with AEC-Q103 and automotive style documentation (PPAP, Qual report, ...)
simplifies OEM discussions (no waivers needed)

Performance– Characterization data over full temperature range provides full transparency of acoustic behavior
and avoids late discrepancies– Best in class audio performance leads to increased speech intelligibility and improved satisfactionof the end user

Flexibility– Extended temperature range allow flexible use in different operational areas(internal and external) and various applications– High acoustic-overload-point (AOP) allows flexible placement inside/outside the vehicle

Service andknowledge– Good reputation of Infineon-Automotive simplifies product selection procedures with OEMs
– Premium services with our worldwide support teams shortens the learning curve and design-in cycles– Fast FAR handling, including high traceability, facilitates efficient incident management

USB-C controllers
and peripherals

Microcontrollers

Cost saving

Sensors

WBG semiconductors

Powermanagement ICs

Special features and benefits of automotive qualified
microphones– Full automotive qualification according to
AEC-Q103-003– Increased operating temperature range up to +105°C 1)– Environmental robust up to IP57 1)– Narrow sensitivity matching for enhanced performance of beam-forming arrays– Flat frequency and stable phase response down to
7 Hz for optimal performance in acoustic noise
cancellation (ANC) applications 1)– Very high AOP for high wind-noise robustness ensures

15-300 V MOSFETs

As part of our comprehensive XENSIV™ microphonefamily, we also offer automotive microphones,
especially tested and qualified to the stringent needs ofthe automotive use cases. These microphones close thegap in the automotive industry, providing the best possible fit for automotive applications.

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Solutions

MEMS microphones technology

Signal-to-noise
ratio (SNR)

67 dB(A)66 dB(A)64 dB(A)63 dB(A)Sensitivity-36 / -26 dB FS-36 / -26 dB FS-36 / -26 dB FS-41 dB FS

Acoustic overload
point AOP (THD = 10%)130 / 120 dB SPL

130 / 120 dB SPL

130 dB SPL

135 dB SPL

Frequency range

28 Hz … 20 kHz

7 Hz … >20 kHz

7 Hz … >20 kHz

7 Hz … >20 kHz

Package

4.0 x 3.0 mm23.50 x 2.65 mm2

3.50 x 2.65 mm2

3.50 x 2.65 mm2

Operating temp.

-40°C ... +105°C-40°C ... +105°C-40°C ... +85°C-40°C ... +105°C

AEC-Q103-003
qualification

Yes

Yes

Yes

Yes

Environmentalrobustness

–

IP57

IP57

IP57

StatusMass production

Mass production

Mass production

Coming soon
(Q3/2024)

15-300 V MOSFETs

IM63D135A
Optimized forexternal
application

500-950 V MOSFETs

IM64D130A
IM64D121A
Optimized for
mid performanceuse cases

Gate-driver ICs

IM66D130A
IM66D120A
Optimized for
ANC and speech

Digital isolators

IM67D130A
IM67D120A
Optimized
for speech

IGBT discretes andsilicon power diodes

Key parameters

Applications

Parameter table: Digital microphones

64 dB(A)Sensitivity-38 dB V-38 dB V

Acoustic overload
point AOP (THD = 10%)130 dB SPL

130 dB SPL

Frequency range

10 Hz … 18 kHz

10 Hz … 18 kHz

Package

3.35 x 2.50 mm2

3.35 x 2.50 mm2

Operating temp.

-40°C ... +105°C-40°C ... +85°C

AEC-Q103-003
qualification

Yes

Yes

Environmentalrobustness

IP57

IP57

StatusMass production

Mass production

Microcontrollers

68 dB(A)

USB-C controllers
and peripherals

Signal-to-noise
ratio (SNR)

Power
management ICs

IM64A130A
Optimized for mid performance use cases

WBG semiconductors

IM68A130A
Optimized for ANC

Sensors

Key parametersIntelligent powerswitches and modules

Parameter table: Analog microphones

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Solutions

MEMS microphones technology

15-300 V MOSFETs
USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

Interior
Interior
Interior

Sensors

Voice recognition / external interaction
Allowing external interaction via voice commands and good speech
intelligibility due to high SNR and low distortions (THD)
Recommended products:
IM66D130A, IM63D135A

Power
management ICs

Event sound detection / siren detection
Contributing to road safety, by detecting sounds like sirens fromemergency vehicles or even dangerous road conditions even thanks
the large dynamic range and high acoustic overload point.
Recommended products:
IM63D135A, IM66D130A, IM68A130A

WBG semiconductors

Active and road noise cancellation (ANC / RNC)
Enabling a quite environment for comfortable travels with best
ANC performance, thanks to the flat and stable frequency andphase response at lowest frequencies.
Recommended products:
IM66D1x0A, IM68A130A

Interior

Speech recognition / voice commands
Best speech intelligibility for speech recognition due to high
SNR and low distortions.
Recommended products:
IM67D1x0A, IM66D1x0A, IM68A130A

Exterior

Speech: Microphone arrays / beamforming
Improved beam forming and noise suppression capabilities of
microphone arrays, due to the narrow sensitivity and phase matching.
Recommended products:
IM67D1x0A, IM66D1x0A

Exterior

Speech: Hands free / e-call / ICC
Enabling distortion free audio capturing for all speech related
application thanks to the high SNR and low distortions.
Recommended products:
IM66D1x0A, IM68A130A, IM64D1xxA, IM64A130A

Applications

Typical applications for automotive MEMS microphones in-cabinand outside of the vehicle

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power modes and their very small package size,
Infineon XENSIV™ MEMS microphones are a perfectmatch for consumer electronics with excellent audio
capturing functionalities and also for selected industrial
applications such as predictive maintenance andsecurity.

500-950 V MOSFETs

XENSIV™ MEMS microphones feature ultra-low selfnoise (high SNR), extremely low distortions (THD) evenat high sound pressure levels (SPL), very tight part-topart phase and sensitivity matching, a flat frequency
response with a low LFRO (low frequency roll-off) andan ultra-low group delay. Combined with selectable

Gate-driver ICs

Low power
consumption

Low part
variability

Digital isolators

High AOP

Wide dynamic range

High SNR

Robustness

IGBT discretes andsilicon power diodes

QualityXENSIV™ MEMS product portfolio
Interface

Package size
[mm]

SNR

AOP
(1/10%THD)

Current

Sensitivity

LFRO
[Hz]

IM69D130High SNR and high AOP

PDM

4.00 x 3.00 x 1.20

69 dB(A)

128/130 dBSPL

980 μA at 3.072 MHz-36 dBFS

28

IM69D120

High SNR and sensitivity

PDM

4.00 x 3.00 x 1.20

69 dB(A)

118/120 dBSPL

980 μA at 3.072 MHz-26 dBFS

28

IM69D127High performance in small size

PDM

3.60 x 2.50 x 1.00

69 dB(A)

123/127 dBSPL

980 μA at 3.072 MHz-34 dBFS

40

IM69D128S

Ultra-low current consumption

PDM

3.50 x 2.65 x 1.00

69 dB(A)

125/128 dBSPL

520 μA at 3.072 MHz-37 dBFS

30

IM70D122High SNR and sensitivity

PDM

3.50 x 2.65 x 1.00

70 dB(A)

120/122 dBSPL

980 μA at 3.072 MHz-26 dBFS

30

IM72D128

Ultra-high SNR

PDM

4.00 x 3.00 x 1.20

72 dB(A)

126/128 dBSPL

980 μA at 3.072 MHz-36 dBFS

20

IM73D122

Ultra-high SNR & sensitivity

PDM

4.00 x 3.00 x 1.20

73 dB(A)

120/122 dBSPL

980 μA at 3.072 MHz-26 dBFS

20

Small package and low LFRO

Singleended

3.35 x 2.50 x 0.98

68 dB(A)

118/130 dBSPL

110 μA at 2.75 V-38 dBV

10

IM68A130
IM70A135

High SNR & high AOP

Differential

3.50 x 2.65 x 1.00

70 dB(A)132/135 dBSPL

170 μA at 2.75 V-38 dBV

37

IM73A135

Ultra-high SNR & high AOP

Differential

4.00 x 3.00 x 1.20

73 dB(A)132/135 dBSPL

170 μA at 2.75 V-38 dBV

20Intelligent powerswitches and modules

Main features

Microcontrollers

AnalogDigitalInfineonmodel

USB-C controllers
and peripherals

All XENSIV™ consumer microphones have bottom port. Due to SDM (Sealed Dual Membrane) XENSIV™ microphone deliver IP57 ingress protection on the component
level for better manufacturability and robustness against water and dust.

XENSIV™ MEMS microphone boards
Digital XENSIV™ MEMS microphones
evaluation board

EVAL AHNB ANALOGV01

Analog XENSIV™ MEMS microphones
evaluation board

EVAL_IM69D120_FLEXKITEVAL_IM69D130_FLEXKITKIT_IM68A130V01_FLEX
KIT_IM69D127V11_FLEX
KIT_IM69D128SV01_FLEX
KIT_IM70A135V01_FLEX
KIT_IM70D122V01_FLEX
KIT_IM72D128V01_FLEX
KIT_IM73A135V01_FLEX

The flex evaluation kits allow
simple and easy evaluation of
XENSIV™ MEMS microphones.
One microphone of the respective
type is mounted on each flex board.
A flex board can be easily connected
to an audio testing setup with
the included adapter board via a
6-position ZIF connector. Each kit
includes five flex boards and one
adapter board.

KIT_IM73D122V01_FLEX

OPN No.

Board

EVALAHNBDIGITALV01TOBO1
SP005568087

EVALAHNBANALOGV01TOBO1

SP002153026

EVALIM69D120FLEXKITTOBO1

SP002153022

EVALIM69D130FLEXKITTOBO1

SP005728206

KITIM68A130V01FLEXTOBO1

SP005403891

KITIM69D127V11FLEXTOBO1

SP005744505

KITIM69D128SV01FLEXTOBO1

SP005728204

KITIM70A135V01FLEXTOBO1

SP005826638

KITIM70D122V01FLEXTOBO1

SP005429924

KITIM72D128V01FLEXTOBO1

SP005415695

KITIM73A135V01FLEXTOBO1

SP005728208

KITIM73D122V01FLEXTOBO1

Power
management ICs

EVAL AHNB DIGITALV01

SP No.

WBG semiconductors

Description

Sensors

Product

15-300 V MOSFETs

MEMS microphones for consumer applications

Applications

Solutions

MEMS microphones technology

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Solutions

MEMS microphones technology

Applications

Features, applications and use cases for MEMS microphones for consumer

500-950 V MOSFETs
Gate-driver ICs
Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

Applications– TWS earbuds– ANC headphones– Smart speakers– Conference speakers– Laptops / tablets– Wearables– AR/VR devices– Cameras– Video doorbells– Smart home
– Smart infrastructure– Home appliances– Industrial applications– Medical applications

USB-C controllers
and peripherals

Typical use cases– Studio quality audio capturing for communication
devices– Low latency wide band audio signal capturing for active
noise cancellation (ANC) and transparent hearing functionality– Small form factor & current consumption for battery
and size constraint devices– Multi-microphone (array) based beamforming andsource separation for audio zoom features and multiuser audio capturing– High range, far field voice pickup for multi room
applications– Capturing of audio signals in loud environments, suchas outdoor– Audio pattern detection for predictive and preventive
maintenance and security

15-300 V MOSFETs

Features– Ultra-low self-noise / ultra-high SNR– Selectable power modes for longer battery life
– Sealed Dual Membrane (SDM) technology with ingress
protection at microphone level– Extremely low distortions (THD) even at high soundpressure levels– High dynamic range and very high acoustic overload
points (AOP)– Very tight part-to-part phase and sensitivity matching– Flat frequency response with a low LFRO (low frequency roll-off)– Ultra-low group delay for multi-mic applications– Very small package sizes for various applicationsXENSIV™ MEMS microphone partners

WBG semiconductors

Powermanagement ICs

Building upon the superior XENSIV™ MEMS microphone
performance, Infineon’s extensive network of global
partners offers customers a comprehensive portfolio of
XENSIV™ MEMS microphone-based reference designs,
as well as Infineon inside MEMS microphones that will
propel audio performance to the next level even for themost demanding applications.

Sensors

Learn more about our partner program and purchase our partner solutions here.
Click here to learn more:

Supportwww.infineon.com/mems-consumer
538

Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules
Powermanagement ICs

As market leader in radar chips, we offer a wide portfolio of mmWave radar sensors as part of our XENSIV™
family. Designed to support different industrial, consumer and automotive applications, Infineon’s millimeter wave (mmWave) radar portfolio offers both FMCW
as well as Doppler radar sensors supporting 24 GHz, 60
GHz and 77/79 GHz. In addition, customers can rely on
us for the full range of automotive radar 24 GHz, 60 GHz
and 77/79 GHz front-end MMICs (RASIC™) supporting
everything from warning functions (e.g. LCA/BSD) to active safety systems such as Automatic Emergency Braking (AEB) and even to dynamic driving tasks like ACC.

Sensors

Radar offers a host of advantages over passive infrared (PIR) technology in motion detection applications.
These include greater accuracy and more precise
measurement of detected objects, paving the way
for new capabilities in speed detection and motion
sensing. These advanced capabilities enable all sortsof “things” such as robots, cars, smart home devices
and even lights to “see” their surroundings and responddynamically.

WBG semiconductors

Giving technology the ability to “see”

USB-C controllers
and peripherals

Microcontrollers

Radar sensors for consumer, industrial andautomotive applications

Click here to learn more:
Supportwww.infineon.com/radar539

Solutions

Radar sensors

Automotive radar 24GHz

Smart trunk opener system diagram

3.3 V

Tx1

Y

Rx1

TRIG0...3XENSIV™
BGT24ATR22
pulsed Doppler radar

Y

Tx2

Y

Rx2

I2C

USB-C controllers
and peripherals

Y

3.3 V

PSoC™ 4100S Plus
32-bit MCU
Arm® Cortex®-M0+ 48MHz

LIN
transceiver
TLE7258

Power
management ICs

1.8 V

OPTIREG™ linear
high performance LDO
TLS820B2

LIN car network

I2C

WBG semiconductors

OPTIREG™ linear
post regular LDO
TLS203B0

Microcontrollers+12 V from car battery

IGBT discretes andsilicon power diodes

Applications– Automotive short-range radar– Hands-free trunk and door opening– Motion detection– Touchless switchesIntelligent powerswitches and modules

Benefits– Compact PCB design due to high level of integration– Ultra-low power consumption modes for 24/7 use cases– Low system costs due entry-level only microcontrollers– Autonomous motion sensing– Globally approved 24GHz radar with excellent
characteristics for robust and reliable performancein harsh environmental conditions

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

Key features– 24GHz radar transceiver– 2 Tx channels– 2 Rx channels– Low-phase noise VCO– Automatic frequency control– Automatic DC offset compensation– State machine with ultra-low power modes– 12-bit ADC– Digital radar data processing unit
– Temperature range: -40°C to +105°C– VQFN-32 RoHS compliant, leadless package

reception, operating in the frequency range from 24 GHz
up to 24.25 GHz.

15-300 V MOSFETs

The BGT24ATR22 is a Monolithic Microwave Integrated
Circuit (MMIC) for 24GHz radar applications. It provides
building blocks for analog signal generation andApplicationsXENSIV™ 24GHz pulsed doppler radar transceiver BGT24ATR22

Product

OPN

Qualification

Frequency min
Frequency max

NF

Packages

BGT24ATR22

BGT24ATR22E6433XUMA1 2

AEC-Q10024–24.25

NFSSB: 13 dB at 1 kHz

VQFN-32-9

Sensors

24 GHz – Product overview

Click here to learn more:
Supportwww.infineon.com/radar
540

Solutions

Radar sensors

Applications

Automotive radar 60GHz
integrated state machine enables independent dataacquisition with power mode optimization for lowest
power consumption.

500-950 V MOSFETs

XENSIV™ BGT60ATR24C, an automotive 60GHz radar
sensor, enables ultra-wide bandwidth FMCW operation
in a small package. Sensor configuration and data acquisition are enabled with a digital interface and the

15-300 V MOSFETs

XENSIV™ 60GHz radar sensor for automotive enables highly reliable in-cabinmonitoring systems

Digital isolators

Gate-driver ICs

Summary of features– 60GHz radar sensor for FMCW operation– 4GHz bandwidth– 2Tx/4Rx channels– Digital interface for chip configuration andradar data acquisition– Optimized power modes for low-power operation– Integrated state machine for independent operation– AEC-Q100/101 qualified

IGBT discretes andsilicon power diodes

Potential applications– Radar frontend for gesture sensing– High resolution FMCW radars– Short range sensing operations– Hidden sensing applications behind radome

Intelligent powerswitches and modules

Benefits– Low power consumption– Accurate and robust performance– Excellent thermal management– Size and space optimized solution

BGT60ATR24C
PsenseMicrocontrollers

PA

Tx1
PA

Rx4
Rx3
Rx2
Rx1

Tx2
Analogbaseband

Tsense

SADC

FIFO

LDO

MADC

DIV

N

RST

IRQ

FSM

PLL + ramp
generator

SPI

CLK

OSC CLK
76.8/80 MHz

CS
CLK
MISO
MOSI

1.8 V
3.3 V (VDDLF)
GND

Power
management ICs

ChipID

USB-C controllers
and peripherals

PsenseWBG semiconductors

RFfrontend

Product

Frequency [GHz]SP number

Packages

BGT60ATR24C

58–62

SP005350514

VFWLB-76-1

SHIELD_60ATR24ES_01

58–62

SP005448216

VFWLB-76-1

Sensors

60 GHz – Product overview

Click here to learn more:
Supportwww.infineon.com/radar541

Solutions

Radar sensors

RASIC™ automotive radar 77/79GHz

Applications

Front-end ICs for automotive radars
Infineon offers a complete suite of 77/79GHz radar
chipsets consisting of– Radar 77GHz transceiver MMIC (RASIC™) with
RXS81xxx– Radar MCU family featuring radar signal processing
units (2nd generation AURIX™ TC3xx)– Radar system power supply with numerous safetyfunctions (TLF3068x)

RXS81xxx is a highly integrated device that performs allfunctions of a radar front-end in a single device – from
FMCW signal conditioning to generation of digital receive
data output. On-chip sensors for temperature, output
power and multiple monitoring circuits allow for calibration and monitoring. Controlling the MMIC is done via SPI.

Customer benefits:– One 77/79GHz radar platform supporting all types ofautomotive radar applications– Scalability by cascading multiple MMICs and MCUs
enabling most advanced sensors– Flexibility through numerous configuration parameters– ASIL C support reducing customer R&D efforts

Key benefits

Features

RXS816xPL

3Tx4Rx

RXS8161PLx: Standalone transceiver MMIC
RXS8162PLD: Transceiver MMIC forcascaded setup

RXS8156PLA

2Tx4Rx

RXS8156PLA: Cost-optimized transceiver MMIC

– Transmit channels (2Tx or 3Tx, up to 1 GHz BW within 76–77GHz)– Receive channels: 4Rx– Integrated PLL (Phase Locked Loop)– Sequencer enabling the execution of an user-defined ramp configuration– Integrated Analog-to-Digital Converter (ADC)– Integrated calibration functionality– Build-in monitoring functionality– Compliant to IS0 26262; capable for up to ASIL C

500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes

Config.

Intelligent powerswitches and modules

Product

Microcontrollers

77 GHz – Product overview

15-300 V MOSFETs

RXS81xxx – family of transceiver MMICs for 77GHz
automotive radar
Infineon has been delivering automotive 77GHz radar
products for over 10 years. Infineon’s family of radartransceiver MEMs (RASIC™) addresses the needs of
77/79GHz radar for all safety-critical applications fromautomatic emergency-braking (AEB) to high-resolution
radars in automated driving. It supports for precise
distance measurement and simultaneous transmitter
operation for MIMO.

Please be aware that 77/79GHz radar products are not available via Infineon’s distribution partners.

TLF3068x
3.3 V

Y

Y
Y
Y

SPI

SPI
Tx2
Tx3

RXS816xPL
77 GHztransmitter
receiver+
PLL + ADCs+
ADC interface

Rx1
Clk

Rx4

Serial32-bit MCU
Multicore
AURIX™ 2G
TC3xx

SPI

SerialSPU
FFT

Clk-inAcquisitionRAM

WBG semiconductors

Y

3.3 V

Tx1

…

Y

5V

Sync

Power
management ICs

ADAS safety supply
UV-/OV-/ERR-monitoring window-/
Q&A-watchdog safe state controller

USB-C controllers
and peripherals+12 V from battery

77 GHz radar ECU

Sensors

Y
Transceiver

CAN FD, Ethernet

Click here to learn more:
Supportwww.infineon.com/rasic542

currently available. These radar chips are designed tosupport different industrial, smart home, and consumer
applications. In addition, we also offer radar sensors in
the 60 GHz range, which are used in consumer products
such as the Google Pixel 4 smartphone.

500-950 V MOSFETs

As market leader in radar chips, we offer a wide portfolio of mmWave radar sensors as part of our XENSIV™
sensor family – including Doppler radar as well as
FMCW radar systems. This portfolio includes thesmallest 24 GHz MMIC in the market as well as the mostintegrated and largest 24GHz radar transceiver family

Motion detection with radar offers significant advantages over PIR and othermotion-sensing technologies

Digital isolators

Gate-driver ICs

These include smaller system sizes, greater accuracy,
and more precise measurements of detected objects.
In addition, radar can also determine the directionof a moving object, speed of an object, distance, anddepending on the antenna configuration, even theposition of a moving object.

IGBT discretes andsilicon power diodes

With our 24 and 60GHz radar sensors, we cover a wide
range of applications. Many of them are based on
motion detection triggering systems like lighting solutions, automatic doors, camera and security systems,
or smart home devices. In contrast to other motion
detection technologies like PIR, radar technology offers
significant advantages.

When to use 24GHz or 60GHz radar technology

24GHz
Up to 100 m

Up to 10 m

Range resolution

Power consumption

Yes~625 mm2~125 mm2<1 mW possible

Detection throughobstacles<1 mW possible

Good penetration

Environmentalrobustness

Limited penetration

Unsusceptible
Physical aspectPowermanagement ICs

No

WBG semiconductors

System size

Up to x28 related to 24 GHz

Vulnerable
Regulatory aspect

Sensors

Integrated antennas

60GHz

USB-C controllers
and peripherals

Detection range

vs.

Intelligent powerswitches and modules

use cases such as human tracking and segmentation.
Even gesture control, material classification, or themonitoring of various vital functions (respiration,
heartbeat, or even blood pressure) is possible withradar technology due to micromotion detection.

Microcontrollers

In the 24 GHz range, the bandwidth for FMCW radar
operations covers 250 MHz within the regulated ISM
band. In the 60 GHz regime, an unlicensed ultra-wideband of up to 7 GHz can be used for short-range applications. Consequently, 60GHz FMCW radar systems canoffer a better resolution and therefore allow additional

15-300 V MOSFETs

Radar sensors for IoT & consumer devices

Applications

Solutions

Radar sensors

Product aspect

Click here to learn more:
Supportwww.infineon.com/radar-for-iot
543

Solutions

Radar sensors

Indoor and outdoor.
Resistant to harsh weather

Monitors and laptops

Home appliances

Air conditioners

Smart speaker

Small, hidden, sensitive

Activate displays andcontrol it with gestures

Track people to move theairflow away from themEliminate keyword
based activation

TV

Gaming and VR

Smart toilet

Service robots

Safe energy & OLED
lifetime by turning off

Enhance gaming
experience

Presence sensing and waterlevel detection

Robust, small footprint,
accurate

Robotics

Sleep monitoring
systems

Safety, accuracy andefficiency

Breathing & heart ratemeasurement

USB-C controllers
and peripherals
WBG semiconductors

Powermanagement ICs– Maintains operation through harsh environmental
conditions such as rain, snow, fog, dust, etc.
– Sensitive enough to capture breathing and heartbeat– Radar can feel presence & vital functions– Radar performance parameters can be adjusted– Adaptable to different application requirements

Sensors

Summary of key benefits– Direction, proximity, and speed detection– Segmentation and tracking functionalities– Target positioning– Detection through non-conductive materials– Product design flexibility– Anonymous sensing

15-300 V MOSFETs

Security camera anddoorbells

500-950 V MOSFETs

Direction of travel toremove false opening

Gate-driver ICs

Robust, discreet, small

Digital isolators

Lighting

IGBT discretes andsilicon power diodes

SecurityIntelligent powerswitches and modules

Door opening

Microcontrollers

Smart Home

Applications

Radar implementation can bring several benefits to different applications:

Click here to learn more:
Supportwww.infineon.com/radar-for-iot
544

60GHz radar sensors for consumer and IoTInfineon’s innovative XENSIV™ 60GHz radar chip enables things to see and revolutionizes the human-machine interface.

BGT60LTR11SAIPXUMA1XENSIV™ 60GHz first completely autonomous radar
sensor for motion sensing

DEMO BGT60LTR11AIPSP005422969

DEMOBGT60LTR11AIPTOBO1

Demonstration kit (Shield + 60 GHz baseboard)

SHIELD_AUTONOM_BGT60

SP005630363

SHIELDAUTONOMBGT60TOBO1

Shield for autonomous operation of
BGT60LTR11AIP; directly fits on Arduino MKR board

REF BGT60LTR11AIP M0

SP005894766

REFBGT60LTR11AIPM0TOBO1

Reference design with Cortex®-M0 MCU
for data processing

S2GO RADAR BGT60LTR11

SP005594890

S2GORADARBGT60LTR11TOBO1

Shield2Go version

BGT60TR13C

SP002262606

BGT60TR13CE6327XUMA1XENSIV™ 60GHz radar sensor for advanced sensing

DEMO BGT60TR13C

SP005728718

DEMOBGT60TR13CTOBO1XENSIV™ 60GHz radar sensor demo board foradvanced sensing

BGT60UTR11AIPSP005407929

BGT60UTR11AIPXUMA1XENSIV™ highly integrated 60GHz FMCW radar
sensor

DEMO BGT60UTR11AIPSP005745304

DEMOBGT60UTR11AIPTOBO1XENSIV™ BGT60UTR11AIP 60GHz radar sensor
FMCW demo board

500-950 V MOSFETs

SP005832449

UF2BGA-42

Gate-driver ICs

BGT60LTR11SAIP

Digital isolators

XENSIV™ 60GHz first completely autonomous radar
sensor for motion sensing

VF2BGA-40

VF2BGA-28

IGBT discretes andsilicon power diodes

BGT60LTR11SAIPXUMA1

BGT60LTR11AIP – XENSIV™ 60GHz first completely autonomous radar sensor
for motion sensing
The BGT60LTR11AIP is a fully integrated microwave
motion sensor including antennas in package (AIP)
as well as built-in detectors for motion and directionof motion. A state machine enables operation of thedevice without any external microcontroller. In thisautonomous mode, it detects a human target up to 7 mwith a low power consumption of less than 2 mW. The
BGT60LTR11AIP enables radar technology for everyone, since it does not require know-how in RF, antenna
design, or radar signal processing. These features makethe small-sized radar solution a compelling smart andcost-effective replacement for conventional PIR sensors
in low power or battery-powered applications. Also,with its small form factor, Infineon’s highly integrated
radar sensor solutions bring innovative, intuitive
sensing capabilities to many applications.

Radar has been demonstrating to be a powerful
sensor for short-range motion detection. Through reliable presence and absence detection, smart devices
equipped with radar sensors become more energy efficient and therefore smart and more sustainable. Users
can also benefit from vacancy detection in applications
such as televisions. For example BGT60LTR11AIP has
been implemented in Samsung’s Frame TV 2021, whichputs the TV from art mode into sleep mode when there
is no person nearby for a user-specified time. This function not only saves energy, but also displays lifetime.
BGT60LTR11AIP has a high sensitivity and can detect if
a person is present and if the device needs to be ready –similar to a screensaver that deactivates the PC monitor
after a certain time without mouse or keyboard input
and reactivates it as soon as new input is noticed.
Through this reliable presence and absence detection,
Infineon’s 60GHz radar powers the design of truly smart,energy-saving devices. Find out more on our website.

Intelligent powerswitches and modules

SP005537624

Microcontrollers

BGT60LTR11AIP

Packages

USB-C controllers
and peripherals

Description

Powermanagement ICs

OPN

WBG semiconductors

SP

Sensors

Product

15-300 V MOSFETs

Product portfolio

Applications

Solutions

Radar sensors

Click here to learn more:
Supportwww.infineon.com/60GHz
545

Solutions

Radar sensors

15-300 V MOSFETs
500-950 V MOSFETs

Adding a M0 MCU extends flexibility– Up to 14 m detection range (SPI mode)– Less than 2 mW power consumption possible

Intelligent powerswitches and modules

Block diagram of the BGT60LTR11AIP
PGA
HPF

LPF

Microcontrollers

State machine

MPA

LNA

Polyphasefilter

Trafo

Transmitter

USB-C controllers
and peripherals

Analog base bandPowerdetectorPower
splitter

Trafo

Downconverter

ReceiverPowermanagement ICs

SPI

Sample& holdModeselectPGA

Quartzosc.

Freq.
divider
Phaselocked
loop

Sample& hold

HPF

LPF

WBG semiconductors

Freq.
dividerGate-driver ICs– Up to 7 m detection range– Less than 2 mW power consumption– Requires minimal external circuitry incl. crystal, LDO
and some resistors capacitors

Digital isolators

Key benefits– Autonomous mode

IGBT discretes andsilicon power diodes

Target application– Smart building and smart home
– Home appliances– Smart home security– Room air conditioners– Automated door openers– Smart entrance counter solution– Displays such as TVs, monitors, laptops or tablets– Lighting systems and lighting control

Applications

Key features– 3.3 x 6.7 x 0.56 mm package size
– 1Tx 1Rx Antennas in Package (AIP) with 80° fieldof view– Built-in motion detector– Built-in direction of motion detector– Multiple modes of operation incl. a completely
autonomous mode
– Adjustable performance parameters: detection
sensitivity, hold time and frequency of operation– FR4 material for PCB design is sufficient

Analog base band
Motiondetector

Direction
detector

Sensors

Frequency generator

Click here to learn more:
Supportwww.infineon.com/60GHz
546

Solutions

Radar sensors

Applications

DEMO BGT60LTR11AIPFor evaluation of the completely autonomous 60GHz radar sensor MMIC
for motion sensing

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

15-300 V MOSFETs

This demo features Infineon’s first completely autonomous radar sensor – the BGT60LTR11AIP. The 60GHz
radar MMIC is a fully integrated microwave motion
sensor including Antennas in Package (AIP) as wellas integrated detectors for motion and direction of
motion. A state machine enables operation of thedevice without any external microcontroller. In thisautonomous mode, it detects a human target up to 7 mwith a low-power consumption of less than 2 mW.
These features make the small-sized radar solution acompelling, smart and cost-effective replacement for
conventional PIR sensors in low-power or batterypowered applications.

IGBT discretes andsilicon power diodes

For evaluation of the BGT60LTR11AIP MMIC, this demo
includes the BGT60LTR11AIP shield as well as theInfineon Radar Baseboard MCU7.

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

The BGT60LTR11AIP shield can be attached to an
Arduino MKR board or the included Infineon Radar
Baseboard MCU7. Infineon’s Toolbox supports thisplatform with a demonstration software and a Radar
GUI to display and analyze acquired data in time andfrequency domain. It further enables to change various
performance parameters of the BGT60LTR11AIP in orderto evaluate this radar sensor.

Click here to learn more:
Supportwww.infineon.com/60GHz
547

Solutions

Radar sensors

15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules
Microcontrollers

Target application– Smart TVs– Smart speaker– Smart home
– Smart building– Elderly monitoring– Vital sensing– Home appliances

USB-C controllers
and peripherals

Key benefits– Allows semi-autonomous operation– Highly configurable modulation and power modes– MCU only needs to configure sensor and fetch data
– High velocity resolution– People can be detected up to 15 m
– High sensitivity allows submillimeter level motion
detection– Allows simultaneous measurement of target range
and velocity– High accuracy of range measurements– Reduced interference with other sensors– L-shape enables horizontal and vertical angularmeasurements– Thanks to small package size, PCB area can be saved +design-in process simplified– Reduces average power consumption– Optimized power modes for low power consumption

Powermanagement ICs

Key features– Integrated Finite-State-Machine (FSM)– Very fast chirp speed: 400 MHz/μs– High Signal-To-Noise Ratio (SNR)– Ultra-wide bandwidth > 5 GHz– FMCW operation– Integrated L-shaped antennas + small package size
(6.5 x 5.0 x 0.9 mm³)
– < 5 mW (duty cycling according to released
FCC waiver)BGT60TR13C has been demonstrating to be a powerful
sensor for:– Presence detection/segmentation/tracking:BGT60TR13C enables human presence detection,
tracking, and segmentation while providing extremely
high accuracy in detecting micro and macro motions– Gesture sensing: BGT60TR13C ensures detection ofsubmillimeter motions– Vital sensing: BGT60TR13C is able to track vital signs
in consumer electronics, healthcare as well as
industrial applications

WBG semiconductors

BGT60TR13C offers innovative and intuitive sensing
capabilities
With its small form factor and low power consumption,
BGT60TR13C MMIC brings innovative, intuitive sensing
capabilities to many applications. Based on the devel-

oped algorithm the MMIC can serve established as well
as new applications and use cases without intruding on
privacy. Thanks to its feature-set, the MMIC canmeasure velocity, angle, horizontal as well as vertical.

Sensors

Enablement of horizontal and vertical angularmeasurement
The BGT60TR13C MMIC is a 60GHz radar sensor withintegrated antennas and comes with one transmitting
and three receiving antennas. Thanks to the antennas inpackage (AIP) concept, the antenna design complexity
at the user end can be eliminated and the PCB designedwith standard FR4 materials.

Applications

BGT60TR13C – XENSIV™ 60GHz radar sensor for advanced sensing

Click here to learn more:
Supportwww.infineon.com/60GHz
548

Solutions

Radar sensors

Applications

Block diagram of the BGT60TR13C

BGT60TR13C
PA

SADC

LDO

MADC

DIV

N
FIFO
1.8 V
3.3 V (VDDLF)
GND

SPI

PLL + ramp
generator

CLK

OSC CLK
76.8/80 MHz

CS
CLK
MISO
MOSI

RST

IRQ

FSM

Gate-driver ICs

TSense500-950 V MOSFETs

Analogbaseband

Digital isolators

RFfrontend

15-300 V MOSFETs

TxIntelligent powerswitches and modules
Microcontrollers
Powermanagement ICs

Several benefits come along with the BGT60TR13C
demoboard:– Flexible platform selection– Variable connector options, and option to solder onto
other PCBs
– Highly flexible configuration on FMCW modulation– Power consumption can be optimized according
to use case

USB-C controllers
and peripherals

The radar baseboard is a 40.64 x 25.4 mm2 printed
circuit board (PCB). Its main purpose is to provide ageneric sensor interface for BGT60TR13C MMIC. The
central microcontroller unit (MCU) can perform radar
data processing or forward the sensor data to a USB
interface or an Arduino MKR interface.

The BGT60TR13C shield presents a minimized form
factor of 17 x 12.7 mm2 and comes with an integrated
BGT60TR13C Antenna-in-Package (AIP) radar chip of
6.5 x 5.0 x 0.85 mm3. Moreover, the shield contains adigital interface for configuration and transfer of theacquired radar data to a microcontroller board. The
shield is optimized for fast prototyping designs andsystem integrations as well as initial product featureevaluations. In addition, it offers developers the flexibility to choose their own platform depending on theirpreferred use cases.

BGT60TR13C shieldSensors

BGT60TR13C offers innovative and intuitive sensing
capabilities
This demo board features Infineon’s XENSIV™ 60GHz
radar sensor BGT60TR13C and consists of a radar
baseboard as well as a BGT60TR13C shield.

IGBT discretes andsilicon power diodes

DEMO BGT60TR13C
Getting started with the XENSIV™ 60GHz demo board for advanced sensing

WBG semiconductors

Rx3
Rx2
Rx1

PSenseRadar baseboard
Click here to learn more:

Supportwww.infineon.com/demo-bgt60tr13c549

For first evaluation of the radar sensor, we offer
the DEMO BGT60UTR11AIP as well as the Radar
Development Kit (RDK), which can be downloaded via
the Infineon Developer Center (IDC).

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Features– 60GHz radar operating with 6 GHz bandwidth andramp speed of up to 400 MHz/µs– Antenna in package (AIP) with ±60° Field of View (FoV)– Integrated finite state machine (FSM) for low power
consumption and real-time operation– 4 MSps ADC sampling rate
– Single 50 MHz SPI for chip configuration and datatransfer– Broadcast mode to trigger and configure multiple
devices

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Applications– Smart building devices such as door locks, smart
doorbells and air conditioners– Smart home devices such as smart speakers andthermostats– Smart appliances such as refrigerators and kitchenmachines– Healthcare devices such as baby monitors andsleep tracker– Service robots such as vacuum cleaners and lawn
mowers– Security devices such as motion detectors andIP cameras– Wearables such as headphones and smartwatches– TVs and notebooks

Sensors

Benefits– High sensitivity to detect sub-mm movements forhuman presence detection and vital sensing
applications– High bandwidth for precise distance measurementswith mm accuracy– Small size for integration into space-constrained
environments– Low power consumption for battery-driven
applications

15-300 V MOSFETs
Gate-driver ICs

Its 5.6 GHz ultra-wide bandwidth allows FMCW operations with extremely high resolution. The detectionof sub-mm movements ensures not only extremely
sensitive presence and motion detection up to a rangeof 15 m, but also enables mm precise range measurements, 1D gestures as well as the measurement of vital
signs such as breathing rate and heart rate.

The sensor features a 50 MHz digital SPI interface for
configuration and data transfer, while an integrated
state machine enables real-time data acquisition without requiring constant interaction with the processor.
With three different power modes, users have flexibility
to optimize between performance and power consumption. The BGT60UTR11AIP’s sub-mA average current
consumption makes it suitable for battery-powered
devices.

Digital isolators

The BGT60UTR11AIP is optimized for low power consumption and system cost optimization. With its compact size of only 16 mm2, it is suitable for integration
into the smallest devices. The MMIC is manufactured
using Infineon’s B11 SiGe BiCMOS technology, ensuring
excellent RF performance.

500-950 V MOSFETs

BGT60UTR11AIP – Highly integrated 60GHz radar sensor for consumer
electronics and IoT applications

Applications

Solutions

Radar sensors

Click here to learn more:
Supportwww.infineon.com/BGT60UTR11AIP
550

Solutions

Radar sensors

15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules

Applications– Smart building devices such as door locks, smart
doorbells and air conditioners– Smart home devices such as smart speakers andthermostats– Smart appliances such as refrigerators and kitchenmachines– Healthcare devices such as baby monitors andsleep tracker– Service robots such as vacuum cleaners andlawn mowers– Security devices such as motion detectors andIP cameras– Wearables such as headphones and smartwatches– TVs and notebooks

Microcontrollers

Benefits– Flexible platform selection– Variable connector options, and option to solder onto
other PCBs
– Highly flexible configuration on the FMCW modulation– Advanced functionalities by SPI configuration or
further signal processing– Power consumption can be optimized according to
the radar use case

USB-C controllers
and peripherals

Features of Radar Baseboard MCU7 Plus
– 59 mm x 25.4 mm size
– Can perform radar data processing Arm® Cortex®-M7
processor or forward the sensor data to an USB
interface or an Arduino MKR interface– Hi-Speed USB 2.0 interface– Operates with Radar Development Kit
and radar fusion GUI

Sensors

Features of BGT60UTR11AIP shield– 19 mm x 12.7 mm small form factor– Digital SPI interface for configuration and datatransfer to an MCU– Standard FR4 laminate– Castellated holes on the PCB edges for additionalsignal access– MCU-controllable LED on board indicating radar
sensor status

Powermanagement ICs

The DEMO BGT60UTR11AIP board is supported by
our Radar Development Kit (RDK), which can be
downloaded from the Infineon Developer Center (IDC).

It contains the Radar Fusion GUI for an instant displayof the radar signals as well as predefined applications
such as presence detection or distance measurement.
For further development of application specific radaralgorithms C, C++, Python and MATLAB interfaces areprovided.

WBG semiconductors

This demo board features Infineon’s 60 GHz XENSIV™
radar sensor BGT60UTR11AIP. It consists of a Radar
Baseboard MCU7 Plus and a BGT60UTR11AIP sensor
shield. The board can be used for product featureevaluations, fast prototyping and radar algorithm
development with the BGT60UTR11AIP.
The BGT60UTR11AIP MMIC has integrated antennas andis equipped with one transmit and one receive antenna.
With its compact size of only 16 mm² and extremely
high FMCW performance (5.6 GHz bandwidth), this radar
sensor is suitable for a wide range of applications.

Applications

DEMO BGT60UTR11AIP – Getting started with the XENSIV™ BGT60UTR11AIP
60GHz radar sensor FMCW demo board

Click here to learn more:
Supportwww.infineon.com/BGT60UTR11AIP
551

Solutions

Radar sensors

Infineon BGT24M / BGT24L family of MMIC chips

Benefits

BGT24MTR11

1Tx + 1Rx

BGT24MTR12

1Tx + 2Rx

BGT24LTR11

1Tx + 1Rx

BGT24LTR22

2Tx + 2Rx

– Measures, not just motion, but also
speed, direction, and distance– Small form factor– Resistance to moisture, dirt,
and temperature– Increased area coverage– Discrete design

Power
Det.

Sensor
ADC

HPF

LPF

PS

Trafo

HPF

LPF

HPF

LPF

PS

Trafo

HPF

LPF

DAC

PPF

Trafo

Sync 1

Sync 1Power
splitter

PPF

Trafo

DAC
Trafo
f-Div
/tbd

Sensors

Power
Det.

Gate-driver ICs

BG/
PTAT

USB-C controllers
and peripherals

SPI– Low power MMICs for energy saving– Privacy protection– Adaptable to different application
requirements– Highly integrated chips eliminating
costly external components

Intelligent powerswitches and modules

FeaturesMicrocontrollers

Configuration

Digital isolators

mm

IGBT discretes andsilicon power diodes

mm

2 .4

mm

Power
management ICs

5. 5

Product

The BGT24LTR22 key features– 24GHz transceiver MMIC
– Fully integrated low phase noise VCO– Integrated analog base band stage with
programmable gain and filter settings– Bi-directional pin for synchronization– Built in temperature compensation
circuit for VCO stabilization,no PLL needed– Low power consumption– Fully ESD protected device– Single ended RF and IF terminals– Single supply voltage 1.5 V– Long-range distance detection ofmoving objects up to 50 m
– Wide range speed detection up to±100 km/h– Low BOM costs

2 .4

4. 5

– 24GHz ISM band operation formotion, speed, direction movementand distance measurements– Five 24 GHz chips available– Highly integrated MMICs

500-950 V MOSFETs

Infineon MMIC
mm

Featuresrequires one transmit and one receive channel, to more
complex applications like 3D positioning, which requires
two or more receive channels, our range of radar chips
supports all of your requirements.

WBG semiconductors

Infineon’s range of 24 GHz industrial radar chips
provides five configurations of transmit and receiverchannels, ensuring that there is a chip to support yourspecific application. From basic applications such as
motion detection in security systems, which only

15-300 V MOSFETs

Applications

24GHz radar sensors

Click here to learn more:
Supportwww.infineon.com/24GHz
552

Solutions

Radar sensors

Partner modules using
Infineon chips

FeaturesBenefits– Ease of design– Turnkey solution, no need fortest and certification

Gate-driver ICs– Complete module, including radar
MMIC, antenna options, MCU signal
processing options, and SW options(Doppler, FSK and FMCW versions
available)

15-300 V MOSFETs

range of applications. Utilizing our strong network ofpartners, the radar portfolio is extended to include a
range of easy-to-integrate modules. Each of them
contains Infineon’s 24 GHz MMIC.

500-950 V MOSFETs

Partnering with the leading radar solution providers
enables Infineon to connect our customers looking forturnkey solutions and design support for a complete

Applications

24 GHz partner modules

IGBT discretes andsilicon power diodes

applications such as smart home automation, camera& security systems, air conditioners, UAVs, robotics,
and smart lighting, are reduced.

Microcontrollers

Intelligent powerswitches and modules

By integrating Infineon’s 24GHz MMIC chip into thepartners easy-to-use and simple-to-integrate modules
the complexity and time to market for a range of

Digital isolators

Module (RF module; RF module+ MCU including SW)

XENSIV™ radar sensor partners

USB-C controllers
and peripherals

Learn more about our partner program and purchaseour partner solutions here.

Powermanagement ICs

Do you have a question?

Sensors

WBG semiconductors

Learn more and ask questions in our radar sensor community.

Click here to learn more:
Supportwww.infineon.com/radar-for-iot
553

Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs

XENSIV™ PAS CO2 sensors

Digital isolators

High performance in a small size –disruptive CO2 sensors based on photoacoustic spectroscopy (PAS)enable smart monitoring of indoor air quality, facilitating improvements in health, productivity and overall
well-being. These features make the PAS CO2 sensors
ideal for heating, ventilation and air conditioning applications as well as for integration into consumer IoT
devices such as air purifiers, thermostats, baby monitoring devices, wake-up alarms and smart speakers.

Accurate, real-time CO2 measurement
thanks to superior MEMS technology

Disruptive environmental sensor
technology from Infineon

Widespread adoption of real CO2 sensors has so far beenhampered by size, performance and cost constraints.
Infineon’s PAS CO2 sensors leverage photoacoustic
spectroscopy (PAS) technology to provide an exceptionally small, highly accurate and cost-effective sensing
solution. Infineon’s leading position in MEMS technology is the foundation for this unique and accurate CO2
detection approach. Reliable CO2 measurements

PAS CO2 integrates on the PCB a photoacoustic transducer, including an acoustic detector, infrared source
and optical filter; a microcontroller for signal processing
and a MOSFET chip to drive the infrared source. The
exceptional sensitivity of the acoustic detector coupledwith the integrated PCB design reduce space requirements by more than 75 percent compared to nowadays
state-of-the-art NDIR CO2 sensors.

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

CO2 measurement contributes to improvements inhealth, comfort and productivity as well as energy efficiency. Even at moderate levels, CO2 can have a negative
impact on health and productivity, causing drowsinessand headaches. Fortunately, smart indoor air quality
sensors can “smell” rising levels of CO2 and either alert
the user or trigger a system response. Awareness ofindoor air quality is further increasing as a result of
the COVID-19 pandemic, making accurate, affordable
monitoring solutions like PAS CO2 more important thanever. Given the correlation between CO2 and aerosol
concentration, CO2 sensors can contribute mitigating
the transmission of airborne illnesses such as COVID-19,
cold or influenza. Furthermore, CO2 sensors can facilitate demand controlled ventilation, leading to improvements in energy efficiency and significant savings onenergy bills.

Click here to learn more:
Supportwww.infineon.com/CO2554

SolutionsXENSIV™ PAS CO2 sensors

15-300 V MOSFETs

Accoustic detector
optimized for low
frequency operation

500-950 V MOSFETs

PAS principle

Applications

the filtered light, causing them to shake and generatea pressure wave with each pulse. This is called thephotoacoustic effect. The sound is then detected by an
acoustic detector optimized for low frequency operation and converted to a CO2 concentration reading by
the microcontroller.

The PAS (photoacoustic spectroscopy) principle:
The sensor is characterized by a disruptive
measurement principle called PAS (photoacoustic
spectroscopy). It works as follows: pulses of infrared
light pass through an optical filter tuned to the CO2
absorption wavelength. The CO2 molecules absorb

Features– Exceptionally small form factor (14 x 13.8 x 7.5 mm3)
– SMD package delivered in tape and reel
– Advanced compensation and self-calibration
algorithms– Various configuration options (e.g. sampling rate,baseline calibration) and interfaces (UART, I2C, PWM)
– Dust-proof design in compliance with ISO 20653:2013-02– Enhanced durability & minimized maintenancerequirements

Port for gas
diffusion

Benefits– Space savings in customers’ end products– High-quality data and compliance with smart
building standards– Cost-effective high-volume assembly and easy
system integration– Plug & play for fast design-to-market– Customer flexibility thanks to configuration options– Fullfilment of WELL Building Standard®
– Increased energy efficiency & enhanced real estate valuePowermanagement ICs

USB-C controllers
and peripherals

Applications– HVAC (heating, ventilation and air conditioning)systems– Smart home appliances such as air purifiers, airconditioners and thermostats– Consumer devices for air quality monitoring such as
personal assistants and CO2 traffic lights

IGBT discretes andsilicon power diodes

OpticalfilterIntelligent powerswitches and modules

Infrared
light source

Microcontrollers

Absorption chamberaccoustically isolated
from external noise

Digital isolators

Gate-driver ICs

λ = 4.2 µm– Smart indoor lighting

Product

AccuracyInterfaces

Operating range [ppm]Supply voltage [V]PASCO2V01± (30 ppm +3%) of reading between 400 ppm and 5000 ppm

I2C, UART and PWM

0–32000

3.3–12

PASCO2V15± (50 ppm +5%) of reading between 400 ppm and 3000 ppm

I2C, UART and PWM

0–32000

3.3–5

WBG semiconductors

Product overview

Sensors

Learn more and ask questions in our XENSIV™ PAS CO2 sensor community.
Click here to learn more:

Supportwww.infineon.com/CO2555

Solutions

make life easier, safer, greener and more efficient.
Our intuitive sensing solutions are at the very core ofthis mission. Reflecting our belief that the essential
value of sensor technology lies in making our lives moreconvenient through seamless, natural interactions
between people and sensing devices, our aim is to leave
you free to focus on what really matters in life.

Gate-driver ICs

Choose your type of sense

Radar supports existing applications whileproviding features thatenable completely newuse cases. It measuresvelocity, range andangle, both horizontal
and vertical, for precise
position mapping and 3D
tracking.

MEMS microphones
overcome existing audio
chain limitations and aredesigned for applications
where low self-noise(high SNR), wide dynamic
range, low distortions
and a high acoustic overload point are required.

Leveraging photoacoustic spectroscopy (PAS),
Infineon has developed
an exceptionally small
CO2 sensor that overcomes existing size,
cost and performancechallenges.

IGBT discretes andsilicon power diodes

Our digital barometricpressure sensors givedesigners the best choice
when it comes small
form factors, highest
precision and accuracy
over a wide temperature
range, fast read-out
speeds and low power
consumption.

Intelligent powerswitches and modules

PAS CO2 sensors

Microcontrollers

MEMS microphones

USB-C controllers
and peripherals

Radar sensors

Today, sensors already enable interactions between people and devices
Reflecting a holistic approach, we combine different
sensors with state-of-the-art software to create a comprehensive picture of the world around us. By fusing
several smart sensors into one coherent intelligent
system, our intuitive sensing solutions simplify complex
technical processes and enable people to effortlesslyinteract with devices. These smart devices intuitively
sense the world around them, determining what is
expected and needed from them.

Sensors

This interaction often depends on the interpretationand merging of information from different sources.
Machines cannot yet read our minds and do not always
have the information necessary to correctly evaluate agiven situation. So, we sometimes have to explicitly telldevices what we want them to do. This can be inconvenient and time-consuming. Inspired by human nature,
Infineon intuitive sensing solutions are designed to takethe complexity out of our interaction with devices.

Powermanagement ICs

Pressure sensors

Digital isolators

Thanks to industry-leading technologies, Infineon
XENSIV™ sensors are exceptionally precise. They are
the perfect fit for various customer applications in
automotive, industrial and consumer markets.

WBG semiconductors

Imagine a world where technology is unobtrusive andseamlessly integrated into our lives. Where intentional/
deliberate communication between people and devices
is no longer necessary. In this world, there is no needto push buttons or issue commands in order to activate
devices, because technology is capable of interpreting
implicit intentions and context. This enhances the user
experience and makes it more natural – it almost seems
like the devices around us intuitively understand what
we want them to do. At Infineon, this future is alreadybecoming reality. We develop sensor solutions thatenable simple and effortless user interactions with all
kinds of smart devices. Bridging the gap between thereal and digital worlds, our technology is developed to500-950 V MOSFETs

Giving things human-like senses for a better contextual awareness

15-300 V MOSFETs

Applications

Intuitive sensing

Click here to learn more:
Supportwww.infineon.com/intuitivesensing
556

Solutions

Design support

ApplicationsXENSIV™ connected sensor kit
Rapid IoT prototyping experience enabled by XENSIV™ sensors

p

rt

Tr

ai n

i

D o c u m en t a ti o n

Comm u n it y

500-950 V MOSFETs
Gate-driver ICs

Description

OPN No.

XENSIV™ KIT CSK PASCO2

Rapid prototyping platform for use cases based on Infineon’s XENSIV™ PAS CO2 sensor

KITCSKPASCO2TOBO1XENSIV™ KIT CSK BGT60TR13C

Rapid prototyping platform for use cases based on Infineon’s XENSIV™ 60GHz
radar sensor

KITCSKBGT60TR13CTOBO1

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Digital isolators

ProductPowermanagement ICs

Su

po

ng

ModusToolbox™

The Infineon Rapid IoT Connect SOM platform deployedon the XENSIV™ CSK provides hardware, firmware, andcloud artifacts to enable rapid onboarding to the Internetof Things. Bidirectional XENSIV™ sensor to cloud data
communication is securely enabled. The XENSIV™ CSK isa pre-implemented Infineon prototyping sensor systemthat makes it possible to provision, monitor and manage
Infineon hardware remotely. Sensor2cloud kit set up
takes 10 minutes with 12 months free user access to a
dedicated cloud demo platform for sensor data collection
and interpretation as well as sensor data download.

WBG semiconductors

Configuration

leware
Midd

riv e
ers

ct
oje n
Pr eatio
cr

Soft
wa
re
Dev
d ic

Lib
manag rary
em
en
t

ols
To

e
Cod plesmexa

Key benefits– Ideal for prototyping battery-powered IoT devices due
to optimized power consumption. Suited for customer
field trials.
– Rapid development and deployment via code examples in ModusToolbox™ for presence detection,
entrance counter, air quality measurements. Enabler
for multi-sensor data fusion.
– Secure cloud device onboarding and management with
OPTIGA™ Trust M.
– Secure kit provisioning (unique user ID).

Sensors

Key features– Small form-factor (22.5×63×30 mm) adafruit feather
compatible design– AC and DC sensing– Wi-Fi and Bluetooth® 5.0-compliant combo radio module– Power optimized design, deployable with battery– Interchangeable sensor wings – 60GHz radar, PAS CO2– Seamless integration into ModusToolbox™
– FCC and CE certified

15-300 V MOSFETs

The XENSIV™ connected sensor kit enables rapid
development of a custom solution built on Infineon products.
The CSK supports customers in testing sensor-driven IoTproducts and use cases as well as in prototyping. It offers areal-time sensor evaluation with custom configurations andcloud-based sensor data visualization with sensor fusion.
The development kit supports use cases based on XENSIV™
60GHz radar and PAS CO2 with DPS368 pressure sensor(sense), PSoC™ 6 microcontroller embedded processing(compute), connectivity via Infineon AIROC™ CYW43012 WiFi and Bluetooth® Combo (connect) and hardware security
with OPTIGA™ Trust M (secure). Code examples and sensor
libraries are available in the Infineon software ecosystem
ModusToolbox™ to help customers create use case-specificapplication codes for new product offerings.

Click here to learn more:
Supportwww.infineon.com/connectedsensorkit
557

Solutions

Design support

Applications

Shields2Go
MyIoT adapters are gateways to external hardware
solutions like Arduino and Raspberry PI, which are
popular IoT hardware platforms. All this enables thefastest evaluation and development of the IoT system.

500-950 V MOSFETs

The boards are equipped with one Infineon IC and comewith a ready-to-use Arduino library. Customers can now
develop their own system solutions by combining 2GO
boards together with Infineon MyIoT adapters.

15-300 V MOSFETs

Infineon’s Shield2Go boards offer a unique customer and evaluation experience

Product name: OPTIGA™ Trust X Security Shield2Go
Sales name: S2GO SECURITY OPTIGA X
Ordering code: SP002349576

Product
information

Product name: S2GO Radar Sensor BGT60LTR11
Sales name:
S2GO RADAR BGT60LTR11
Ordering code: SP005594890

Product
information

Product name: PASCO2V01 Shield2Go
Sales name: SHIELD PASCO2 SENSOR
Ordering code: SP002851544

Product
information

Product name: IM69D130 Microphone Shield2Go
Sales name: S2GO MEMSMIC IM69D
Ordering code: SP002851544

Product
information

Digital isolators

Product
information

IGBT discretes andsilicon power diodes

Product name: OPTIGA™ Trust E Security Shield2Go
Sales name: S2GO_Security_OPTIGA_E
Ordering code: SP001820138

Gate-driver ICs

Security

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

Sensors

Click here to learn more:
Supportwww.infineon.com/sensor
www.infineon.com/makers
558

Solutions

Design support

Applications

Shields2Go

Product name: TLE493DW2B6 3DSense Shield2Go
Sales name: S2GO_3D_TLE493DW2B6-A0
Ordering code: SP004308594

Product
information

Product name: TLE4966K Double Hall Shield2G
Sales name: S2GO_2_HALL_TLE4966K
Ordering code: SP004308598

Product
information

IGBT discretes andsilicon power diodes

Product
information

Intelligent powerswitches and modules

Product name: TLE4964-3M Hall Sense Shield2Go
Sales name: S2GO_HALL_TLE4964-3M
Ordering code: SP004308590

Microcontrollers

Product
information

Sensors

WBG semiconductors

Powermanagement ICs

Product name: TLV493D 3D Sense Shield2Go
Sales name: S2GO_3D-SENSE_TLV493D
Ordering code: SP001823678

Digital isolators

Product
information

USB-C controllers
and peripherals

Product name: TLI493D-W2BW 3D Sense Shield2Go in
small WFWLB-5-2 package(1.13 mm x 0.93 mm x 0.59 mm)
Sales name: S2GO_3D_TLI493DW2BW-A0
Ordering code: SP005410385

500-950 V MOSFETs

Product
information

Gate-driver ICs

Product name: TLI4971 Current Sense Shield2Go
Sales name: S2GO_CUR-SENSE_TLI4971
Ordering code: SP005345472

15-300 V MOSFETs

Sensors

Click here to learn more:
Supportwww.infineon.com/sensor
www.infineon.com/makers
559

Solutions

Design support

Applications

Shields2Go
Product
information

500-950 V MOSFETs

Product name: XMC 2Go Kit
Sales name: KIT_XMC_2GO_XMC1100_V1
Ordering code: SP001199544

15-300 V MOSFETs

Microcontroller

MyIoT – Adapter

Digital isolators
IGBT discretes andsilicon power diodes

Product
information

Intelligent powerswitches and modules

Infineon’s 2Go boards offer a unique customer andevaluation experience – the boards are equipped with
one Infineon IC and come with a ready-to-use Arduino
library. Customers can now develop their own systemsolutions by combining 2Go boards together with Infineon MyIoT adapters.
MyIoT adapters are gateways to external hardware
solutions like Arduino and Raspberry PI, which are
popular IoT hardware platforms. All this enables thefastest evaluation and development of IoT system.

Gate-driver ICs

Product name: MyIoT Adapter
Sales name: MYIOTADAPTERTOBO1
Ordering code: SP002434972

Powermanagement ICs

Product
information

Sensors

Infineon’s XENSIV™ Sensor Shield provides seamlesshardware compatibility between sensors, microcontroller and connectivity products. When paired with a
MCU / Wi-Fi base board via the Arduino UNO interface,
the board enables developers to quickly evaluate anddevelop with environmental sensors like:– 60 GHz radars– 6-axis IMU– PAS CO2 sensor– 3-axis magnetometer– PDM microphones– Temperature and– Pressure sensors
humidity
The shield also features a TFT display (80x160),
and OPTIGA™ Trust-M secure element, and a QWIIC
connector for additional peripheral expandability.

USB-C controllers
and peripherals

XENSIV™ Sensor Shield for Arduino
SHIELD_XENSIV_A
SP006018677

WBG semiconductors

Product name:Sales name:
Ordering code:

Microcontrollers

XENSIV™ Sensor Shield for Arduino

Click here to learn more:
Supportwww.infineon.com/sensor
www.infineon.com/makers
560

Solutions

Design support

Ready to use, budget-priced plug- and play boards

TLI4971 current sensor 2GO kit
Product name:
TLI4971_MS2GO

TLE4973 current sensor 2GO kit
Product name:
TLE4973 MS2GO

Speed sensor 2GO kit
Product name:
TLE4922 MS2GO

TLE4966 Hall switches 2GO kit
Product name:
TLE4966 MS2GO

Ordering code:
SP005345474

Ordering code:
SP006039680

Ordering code:
SP003029974

Ordering code:
SP005406992

Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes

Product
information

Intelligent powerswitches and modules

Ordering code:
SP002133956
SP002133960
SP002133964
SP002133968

Product
information

Microcontrollers

Angle sensor 2GO kit
Product name:
TLE5012B_E1000_MS2GOTLI5012B_E1000_MS2GO
TLE5012B_E5000_MS2GO
TLE5012B_E9000_MS2GO

Product
information

USB-C controllers
and peripherals

Ordering code:
SP001707582
SP001707578
SP001707574

Product
information

Powermanagement ICs

3D magnetic sensor 2GO kit
Product name:
TLE493D-A2B6 MS2GO
TLE493D-W2B6 MS2GOTLV493D-A1B6 MS2GO

Product
information

Product
information

WBG semiconductors

Ordering code:
SP002676652
SP002676656
SP002676664
SP002676664
SP005910372

Product
information

Sensors

Automotive pressure sensor 2GO kit
Product name:
KP215F1701-PS2GO-KIT
KP229E3518-PS2GO-KIT
KP236-PS2GO-KITKP254-PS2GO-KIT
KP276-PS2GO-KIT

500-950 V MOSFETs

Already equipped with a sensor combined with an Arm® Cortex®-M0 CPU. The Sensor 2GO kits provide a complete setof on-board devices, including an on-board debugger. Build your own application and gadget with the Sensor 2GO kits.

15-300 V MOSFETs

Applications

Sensor 2GO kits

Click here to learn more:
Supportwww.infineon.com/sensors2go
561

Solutions

Design support

Human machine interface (HMI) direction indicator for all
3D magnetic sensor 2GO kits and Shield2Go
Product name: DIR_INDICATOR2GO
Ordering code: SP005350196

Product
information

HMI mini control with 4 directions and 360° rotation for all 3D
magnetic sensor 2GO kits and Shield2Go
Product name: MINI_CONTROL2GO
Ordering code: SP005350192

Product
information

15-300 V MOSFETs

Product
information

500-950 V MOSFETs

Linear control trigger for all
3D magnetic sensor 2GO kits and Shield2Go
Product name: POWER_DRILL2GO
Ordering code: SP005350194

Gate-driver ICs

Product
information

Digital isolators

Out of shaft adapter for all
3D magnetic sensor 2GO kits and Shield2Go
Product name: OUT OF SHAFT FOR 3D 2 GO
Ordering code: SP003475178

IGBT discretes andsilicon power diodes

Product
information

Intelligent powerswitches and modules

Linear slider for all 3D magnetic sensor 2GO kits and Shield2Go
Product name: LINEAR-SLIDER 2GO
Ordering code: SP002043034

Microcontrollers

Product
information

USB-C controllers
and peripherals

Rotate knob for all 3D magnetic sensor 2GO kits,
Angle sensor 2GO kits and 3D magnetic sensor Shield2Go
Product name: ROTATE KNOB 3D 2 GO KIT
Ordering code: SP001504602

Power
management ICs

Product
information

Sensors

WBG semiconductors

Joystick for all 3D magnetic sensor 2GO kits and Shield2Go
Product name: JOYSTICK FOR 3D 2 GO KIT
Ordering code: SP001491834

Applications

Add ons for Sensor 2GO kits and Shield2Go

Click here to learn more:
Supportwww.infineon.com/sensors2go
562

Solutions

Design support

Product
information

Digital isolators

Product
information

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

Spindle2Go for all 3D magnetic sensor Shield2Go
Product name: SPINDLE2GO
Ordering code: SP005989689

Product
information

IGBT discretes andsilicon power diodes

Contactless switch array for all 3D magnetic sensor 2GO kits
and Shield2Go
Product name: Contactless switch array
Ordering code:
Simply use our 3D printing files, link to, and start your 3D print.

15-300 V MOSFETs

Play2Go for 3D magnetic sensor
Product name: PLAY2GO
Ordering code: SP005731811

500-950 V MOSFETs

Product
information

Gate-driver ICs

OpenClose adapter for Hall switch Shield2Go
Product name: OPENCLOSE2GOHSTOBO1

Applications

Add ons for Sensor 2GO kits and Shield2Go

Click here to learn more:
Supportwww.infineon.com/sensors2go
563

Solutions

Design support

TMR linear sensors evaluation boards
Product name:
TLI5590 SATELLITETLI5590 EVAL KIT

Ordering code:
SP005857647
SP005857645

PAS CO2 sensor evalutaion boards
Product name:
EVAL_CO2_5V_SENSOR2GO
EVAL_CO2_5V_MINIBOARD
EVAL_PASCO2_SENSOR2GO
EVAL_PASCO2_MINIBOARD

Ordering code:
SP006037148
SP006037150
SP005582413
SP005577475

15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules

Ordering code:
SP005955184
SP005568087

Microcontrollers

MEMS microphones for ATV plug and play boards
Product name:
EVAL AHNB DIGITALV01
EVAL AHNB ANALOGV01

Product
information

Product
information

USB-C controllers
and peripherals

Ordering code:
SP006015313
SP005853842
SP005853840
SP005853847
SP005853844
SP005632140
SP005632136
SP005632138
SP005876845
SP005343588

Product
information

Powermanagement ICs

Current sensors evaluation boards
Product name:
TLE4973 EVAL 120A
TLE4973 EVAL INLAY
TLE4973 EVAL STD PCB
TLE4973 EVAL VER BAR
TLE4973 EVAL LAT BAR
TLE4972 EVAL LAT BAR
TLE4972 EVAL STD PCB
TLE4972 EVAL INLAY
TLI4971 EVAL 120A
TLE4971 EVAL 120A

Product
information

Product
information

WBG semiconductors

Ordering code:
SP002153022
SP002153026
SP005403891
SP005415695
SP005429924
SP005728204
SP005560671
SP005537489
SP005834257

Sensors

MEMS microphones flex evaluation kits
Product name:
EVAL_IM69D130_FLEXKITEVAL_IM69D120_FLEXKITEVAL_IM69D127_FLEXKITEVAL_IM73D135_FLEXKITEVAL_IM72D128_FLEXKITEVAL_IM70A135_FLEXKITEVAL_IM67D120_FLEXKITEVAL_IM67D130_FLEXKITKIT_IM68A130A_FLEX

Applications

Evaluation boards – for simple and easy
evaluation

Click here to learn more:
Supportwww.infineon.com/evaluation-boards
564

Solutions

Design support

Applications

Choose the best fit magnetic sensor solution from broadest portfolio

15-300 V MOSFETs

Our sensor simulation tools allow you to compare products in application conditions. The tools are easy-to-use andwill guide you in identifying the most suitable Infineon XENSIV™ - sensor combined with the best-fit magnet.

500-950 V MOSFETs

XENSIV™ – Current sensor simulation tool
Define and optimize the current sensing structure for your system. The tool supports design oflateral and vertical insertions for PCB (2 to 10 layer stack) or bus-bar based applications. The
simulation will provide insertion resistance, field transfer factor, sensitivity range, measurement
range and power dissipation as well as cross-talk in case of a 3-phase system.

Gate-driver ICs

Direct link to the Current Sensor Simulation Tool:
https://currentsensorsim.infineon.com/

Digital isolators

XENSIV™ – 3D magnetic sensors simulation tool
3D magnetic field sensor for smaller, more accurate and robust designs. The sensor family, withlow current consumption and cost-optimized design, specifically addresses the needs of newmagnetic sensor applications in consumer, industrial and automotive. They are ideally suited forthe measurement of three dimensional movement within a magnetic field, linear slide movement
as well as 360° angle rotation.

IGBT discretes andsilicon power diodes

Direct link to the 3D Magnetic Sensors Simulation Tool:
https://www.infineon.com/3dsim

Intelligent powerswitches and modules

XENSIV™ – Magnetic switches simulation tool
Discover Infineon’s broad energy saving portfolio of Hall switches in smallest package. Simulate
your Hall switch applications and see the results in an accurate simulation of the magnetic field
and the switching behavior of the Hall switch in the application.

Microcontrollers

Direct link to the Hall Switches Simulation Tool:
https://www.infineon.com/hallsim

Speed sensor solution tool
Infineon’s innovative SPEED SENSOR SOLUTION TOOL will provide a sensor recommendation
for your tooth wheel and back bias magnet geometry. The sensors are ranked according their
expected maximum air gap capability. Customer constraints like enhanced strayfield immunity,
the necessity for a direction channel, or the sensor interface are considered in the selection process.

Sensors

Direct link to the Speed Sensor Solution Tool:
https://speedsensortool.infineon.com

WBG semiconductors

Direct link to the Angle Sensors Simulation Tool:
https://www.infineon.com/anglesimPowermanagement ICs

USB-C controllers
and peripherals

XENSIV™ – Magnetic angle sensor simulation tool
Highest variety - low end to high end, standardized and specialized in all four magnetic
technologies: Hall, GMR, AMR and TMR. This tool calculates the valid distance from the magnet
surface to the sensor and the assembly error, given certain parameters: magnetic properties,
sensor specification and assembly tolerances.

Click here to learn more:
Supportwww.infineon.com/xensiv-simulation-tools
565

Solutions

Design support

QM products supporting a safety use case Additional data
(FIT Rates/Failure Distribution) determined

Products developed according to Infineon mature automotive development processes

500-950 V MOSFETs
Gate-driver ICs
Digital isolators
Sensors

QM

WBG semiconductors

QM products with safety documentation for clause 8-13 integration
Additional Safety Analysis and Extended Testing

Development processextension

Safety conformity level

Full (according to Safety Plan) ISO 26262-compliant products
Additional safety modules added to basic development process ensures
ISO 26262 compliance during the product lifecycle

IGBT discretes andsilicon power diodes

With our holistic approach towards functional safety,
Infineon is responding to the increased complexity andstrict requirements that make functional safety projects
costly and time-consuming. We provide the necessary
products, including documentation and supporting
information, for easing the integration and reduce theeffort at system integrator level.

Intelligent powerswitches and modules– Discover Infineon’s products with ISO 26262
classification

Safety conformity levels:– PRO-SIL™ ISO 26262-compliant devices meet all
relevant requirements for semiconductors as definedin the ISO 26262 series of standards for automotivefunctional safety.
– The PRO-SIL™ ISO 26262-ready marking designates QM
devices that can be integrated into a safety-related
application by customer usage of the ISO 26262:2018
clause 8-13 class II hardware evaluation.
– The Infineon automotive Ensured Compliance process
framework has been certified by SGS-TÜV Saar forprocess compliance with ISO 26262:2018 as of April
2022. This certification underpins our focus on
automotive functional safety.

Microcontrollers

Infineon provides dependable electronics to support
today’s safety-relevant systems and future fail-operational systems as essential components that allows
customers fulfilling their safety requirements on
application level. Highly integrated systems equippedwith safe electronic semiconductors are essential for
key application areas like connectivity, electromobility
and higher levels of automated driving. The ISO 26262
set of standards sets out requirements and guidancefor products in order to be integrated in an automotive
safety applications.

Benefit from:– Innovative solutions for automotive safety-related
applications– Improve time-to-market through comprehensive
safety documentation of ISO 26262-compliant products– Reduce the integrator’s efforts withISO 26262-compliant and -ready products– Broad portfolio of ISO 26262-compliant products
already available– Newly developed automotive parts will primarily bepart of an ISO 26262-compliant development flow

USB-C controllers
and peripherals

Automotive Functional Safety – we ease the process for
integrating safety features with our safety guidelines
and services.

Powermanagement ICs

Dependable electronics based on Functional Safety

15-300 V MOSFETs

Applications

ISO 26262 – Functional Safety (FuSa)

Click here to learn more:
Supportwww.infineon.com/iso26262
566

Infineon’s passion in high quality and dependable products create a portfolio with superior performance andunmatched durability through our Zero defect mentality. We go beyond the standards to fit the real application requirements.
Upgrade your automotive systems and applications
with our high-quality semiconductor components foryour design.

Infineon’s Zero Defect mentality is built upon:– We produce 24/7/365 at sub dpm level: translated intoa year’s timeline: we deliver Zero Defect for all but thelast
3 seconds of a year
– We deliver sub ppm quality levels– 90% of our products are already Zero Defect15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
Sensors

We go beyond the standards to better fit the real application requirements.

IGBT discretes andsilicon power diodes

Dependable electronics based on quality
As vehicles become more reliant on electronic components, the demand for safe and reliable systems is growing. Especially the rising levels of automated driving
depend on the trust that drivers and passengers havetowards the quality and reliability of each component.
The complexity andrequirements in the automotive industry will continue
to grow in terms of quality and dependability to keep
vehicles running safely and smoothly over 15 years oflifetime.

Intelligent powerswitches and modules

Infineon is your trusted partner offering all relevant ingredients for your dependable systems – automotive quality,
Functional Safety, cybersecurity, innovative products,
system understanding and operational excellence.

How Infineon differentiates as a quality leader:
1. Our goal is to go beyond standards to better fit realapplication requirements: from intensive screening
methods to detect production defects, to advanced
AEC Q100/101 tests where required, to sub 1dpm validation to achieve low dpm rates.
2. Our track record of achievements, such as multiple
quality awards from our customers Toyota (Honor
Quality Award in 2020) & Continental (Supplier of theyear in 2019) prove that we consistently achieved outstanding quality targets in the automotive industry.
3. Infineon offers the highest customer service, which
includes a regional network of failure analysis labs
and strong localized competencies, technical trainings and regional quality analysis lab capabilities withstate of the art failure analysis.
4. Meeting customer needs through best-in-class product requirements, design, manufacturing and testing:
We integrate quality criteria in the development processes (e.g. RDDF), Design rules (e.g. ADeGo), materials, large manufacturing processes and process controls, proprietary testing and screening methods.

Microcontrollers

Winning trust of tomorrow’s passengers starts withdependable electronics that enable highly available, dependable, robust, safe and secure systems that operate
in all conditions.

USB-C controllers
and peripherals

The increased need for safe electronic systems in vehicles, that drivers and passengers can rely on, are thefoundation of trust and shape the future towards higher
levels of automated driving.

Dependable electronics based on quality
Automotive quality beyond the standards with a zero
defect mindset
The complexity and functionalities of vehicles will continue to grow, thus driving the need for dependable
electronics with quality being one of its key ingredients.
We are convinced that our passion in quality creates a
product portfolio that meets the high-quality requirements and leads to highly reliable and robust products.

Powermanagement ICs

The future car is fully connected and always online. It
is all-electric and autonomous. At Infineon, we believethat it takes both to realize it- technology and trust.

WBG semiconductors

Dependability is the key driver for the megatrend
towards autonomous driving

Applications

Solutions

Design support

Click here to learn more:
Supportwww.infineon.com/dependable-electronics
567

Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules

Infineon support for sensors

Microcontrollers

Useful links and helpful information
Further information, datasheets and documents

USB-C controllers
and peripherals

www.infineon.com/3dmagnetic
www.infineon.com/pressuresensor
www.infineon.com/24GHz
www.infineon.com/60GHz
www.infineon.com/pressurewww.infineon.com/CO2

Power
management ICs

www.infineon.com/sensors
www.infineon.com/microphones
www.infineon.com/magnetic-sensors
www.infineon.com/current-sensor
www.infineon.com/hall-switches
www.infineon.com/angle-sensors
2GO evaluation kits and online simulation kits

WBG semiconductors

www.infineon.com/sensors2go

Sensors

Online simulation tools

Click here to learn more:
www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

Supportwww.infineon.com/smps
www.infineon.com/xxxxxxx

568

Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
IGBT discretes andsilicon power diodes
Intelligent powerswitches and modules

Infineon powerful support

USB-C controllers
and peripherals

Subscribe to marketing communications herePowermanagement ICs

General support
www.infineon.com/support
www.infineon.com/products
www.infineon.com/applications
www.infineon.com/packages
www.infineon.com/wheretobuy
www.infineon.com/opn

Connect with us
Infineon developer community
Facebook
Instagram
LinkedIn
YoutubeContact our technical support here

WBG semiconductors

About Infineon
www.infineon.com/green
www.infineon.com/quality

Microcontrollers

Find an answer to your question

Sensors

Tools and simulators
Solution finder
Evaluation boards finder
Simulation model finder
Spice simulator
Infineon4Makers
Click here to learn more:
www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

www.infineon.com/xxxxxxx
www.infineon.com/xxxxxxx

Supportwww.infineon.com/smps
www.infineon.com/xxxxxxx

569

Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators
Microcontrollers

A customized solution (commonly known in the industry as an ASIC – Application Specific IC or CSP – Customer
Specific Product) is one that is designed, planned, developed and used for a specific purpose with the mission of being
optimized, efficient, and having all the required functionalities and features to be used in a specific application for asingle customer.

IGBT discretes andsilicon power diodes

Your specific needs, realized.

Intelligent powerswitches and modules

Infineon customized solutions

Working with Infineon fromdesign through to deliveryPowermanagement ICs

USB-C controllers
and peripherals

Infineon as a market leader in customized solutions believes innovation comesthrough collaboration and exploring new paths. Working closely with ourcustomers, understanding their needs, and combining them with our cuttingedge solutions we know there is always a benefit for every customer andapplication. Whether the challenge is related to IP, BOM constraints, or simply
required higher integration – an ASIC can be the solution.

WBG semiconductors

More than just a productSensors

A customized solution enabled by Infineon’s extensive knowledge, experience,and partner network provides several more advantages such as IP protection,
trusted Infineon quality and supply guarantee.

Click here to learn more:
Supportwww.infineon.com/asic
570

Applications

SolutionsInfineon customized solutions

15-300 V MOSFETs

A processstreamlined throughefficiency, expertise, andexperience

Digital isolators

Gate-driver ICs

500-950 V MOSFETs

The journey starts with you and afocus on feasibility - we match yourneeds early on with our 40 years
expertise in building world-classindustry leading semiconductors
and ensure successful
implementation of yourrequirements.

From technology advantage to supply stability

Sensors

WBG semiconductors

Powermanagement ICs

USB-C controllers
and peripherals

Microcontrollers

Intelligent powerswitches and modules

IGBT discretes andsilicon power diodes

Whether it’s digital, analog, mixed signal devices an embedded processor or integrated sensors. We have the experienceand product know-how. Being one of the largest semiconductor companies, we also have a vast array of IPs. We canintegrate almost anything into your chip from the vast variety of our sensors, discrete devices, drivers, and many more,
including support for higher voltage levels. Our in-house fabrication facilities and design centers around the globe are
known for highest quality standards. We also have well established partnerships with all major silicon foundries andassembly test fabs to complement our in-house technologies. At every step along the way we take pride in the highest
quality Infineon is known for.

Click here to learn more:
Supportwww.infineon.com/asic571

Solutions
Applications
15-300 V MOSFETs
500-950 V MOSFETs
Gate-driver ICs
Digital isolators

The Infineon Partner Program

IGBT discretes andsilicon power diodes

Together we create and innovate for our customers’ successIntelligent powerswitches and modules

Find solutions from our partners to accelerate your business of tomorrow. Infineon’s global network of partners areexperts in designing products, solutions or services leveraging Infineon components in 5 key domains: software,
hardware, services, tools and end-applications.

Partners
manufacturing
electronic
components,
demo boards
and turnkey
modulesPartners
programming
various typesof software,algorithms andoperatingsystems

Partners
designing
computerprograms for thedevelopment ofembeddedsystems

Partners
providing
cloud andengineering
services,
application
supportor trainings

Partners
creating
end products
and related
applications... jointly wecreate and commercialize
value added
solutions, while
reaching new
buyers... jointly weenhance ourportfolio withcomplementarycomponents andexpandtechnology
know-how... jointly weenable a complete
and immersive
development
experience forcustomers... jointly webuild up engineering capabilities andoffer it to a worldclass customer
network... jointly weprovide customers
with state of theart solutions andinnovative use
cases

USB-C controllers
and peripherals

End application

Powermanagement ICs

Services

WBG semiconductors

Tools

Sensors

SoftwareSupportPackages

HardwareMicrocontrollers

The Infineon partner program is a global ecosystem of qualified companies, offering knowledge and experience toenable and implement Infineon products. Our associated, preferred, and premium partners help design your device
and application based on our components. They have been carefully selected by us on the basis of their competence
and ability to design and deliver strong and trustworthy solutions, especially for new technologies and use cases.

Find out more about the Infineon Partner Program, the latest news and solutions from our partners, and much
more on our webpage.
Looking for a specific partner solution in your region? Our partner finder provides an overview of ourpartners and their offerings. Simply specify your search in the dropdown menu and browse through the companies
and their solutions to navigate directly to the respective website for further information.
Additionally, use the “partner tab” on our product and application pages to find out more about Infineon’s
partner solutions.
Click here to learn more:
www.infineon.com/partners
572

Infineon hotline – get connected with the answers! Wherever, whenever.
Infineon offers its toll-free service hotline as one central number, available 24/7 in English, Mandarin, and German.

‒ Germany (Toll-Free)‒ China, Mainland (Toll-Free)‒ USA (Toll-Free)‒ India (Toll-Free)‒ Other countries‒ Direct access

0800 951 951 951 (German/English)
4001 200 951 (Mandarin/English)
1 866 951 9519 (English/German)
1 800 572 4924 NEW (English)
00* 800 951 951 951 (English/German)+49 89 234 65555 (interconnection fee, German/English)* Please note:Some countries may require you to dial a code other than “00” to access this international number.
Please visit our service center for more information!

www.infineon.com
Published byInfineon Technologies Austria AG
9500 Villach, Austria© 2024 Infineon Technologies AG.
All Rights Reserved.

Date: 07 / 2024

Please note!
This Document is for information purposes only and any
information given herein shall in no event be regarded as awarranty, guarantee or description of any functionality,
conditions and/or quality of our products or any suitability for aparticular purpose. With regard to the technical specifications ofour products, we kindly ask you to refer to the relevant productdata sheets provided by us. Our customers and their technicaldepartments are required to evaluate the suitability of our
products for the intended application.

Additional information
For further information on technologies, our products, theapplication of our products, delivery terms and conditions
and/or prices, please contact your nearest Infineon Technologies
office (www.infineon.com).

We reserve the right to change this document and/or the
information given herein at any time.

Except as otherwise explicitly approved by us in a written
document signed by authorized representatives of Infineon
Technologies, our products may not be used in any life-­
endangering applications, including but not limited to medical,
nuclear, military, life-critical or any other applications where afailure of the product or any consequences of the use thereof
can result in personal injury.

Warnings
Due to technical requirements, our products may containdangerous substances. For information on the types in question,please contact your nearest Infineon Technologies office.