Data Sheet
2024.05

PRELIMINARY

COB1100GD-16100S-X
COB type LED

Outline and Internal Circuit(Unit : mm)

Features Chip Material : InGaAsP Chip Dimension : 1mm * 1mm
 Number of Chips : 16pcs
 Peak Wavelength : 1100nm typ.
 Lead Frame Die : Copper Lens : Silicone resin

Application

COB1100GD-16100S-X
Absolute Maximum Ratings (Tc=25°C)
Item

SymbolRatings

Unit

Power Dissipation

PD31W

Forward Current

IF1000mA

Pulse Forward Current

IFP

2000

mA

Reverse Voltage

VR80V

Thermal Resistance

Rthjs

2K/W

Junction Temperature

Tj120°C

Operating TemperatureTopr-40 ~ +85°C

Storage Temperature

Tstg-40 ~ +100°C

Soldering Temperature

TSOL250°C‡Soldering condition : Refer to technical support information on the website.

Optical and Electrical Characteristics (Tc=25°C)
Parameter

SymbolMin

TypMaxUnit

26(31)V

Test Condition
IF=1A

Forward Voltage

VF

t=20ms
Reverse Current

IR

Total Radiated Power

PO10uA

VR=80V
IF=1A

(5.5)

W
t=20msnm

IF=1A
t=20ms

55

nm

IF=1A
t=20ms1/2±65deg.

IF=100mA

Rise Timetr10ns

IF=1A

Fall Time

tf

20ns

IF=1APeak WavelengthpHalf WidthViewing Half Angle‡Radiated Power is measured by G8370-85.
‡Half Width is a per-chip characteristic.

1050

1150

COB1100GD-16100S-X
Typical Characteristic Curves

Relative Radiant Intensity Forward Current

Forward Current - Forward Voltage10(ta=25°C, tw=10 s, Duty=1%)(ta=25°C, tw=10 s, Duty=1%)
1000mA Standard

Forward Current (mA)

103

10.1

10

20.01

1010.001

1000.0001

18202224

26

28

30

3210Hz100Hz

Forward Current Ifp (mA)

1kHz

110100Forward Current (mA)

Forward Voltage (V)10kHz341000

COB1100GD-16100S-X

Radiation Characteristics

Relative Radiant Intensity (A.U.)

1.00.9±65
0.8
0.70.6
0.50.40.3
0.2
0.1
0.0-90-60-30

030

60

90Angle (deg.)

Radiation Characteristics-20-1001020-30

30Angle (deg.)

-40

±65
40

-50

50-60

60-70

70-80

80-90

90
1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

Relative Radiant Intensity (A.U.)

COB1100GD-16100S-X*The data below shows the characteristics of one representative COB chip.

Forward Voltage Ambient Temperature

Relative Radiant Intensity Ambient Temperature

2.2109876

If=1000mA
2.1

If=1000mA

52.0

4
3

1.92

1.8
1.7

198
76

1.6

5

1.5

4
3

1.4
2

1.3
1.2

0.1
0

20

4060

80

100

0406080

Ambient Temperature (°C)

Ambient Temperature (°C)

Peak Wavelength Ambient Temperature

Relative Spectral Emission

1150

100

1.0

If=1000mA

Peak Wavelength (nm)20ta=25°C

1140

0.91130

0.8

1120

0.7

1110

0.6

11000.51090

0.4

1080

0.3

1070

0.2

1060

0.1

1050
020

40

60

80

Ambient Temperature (°C)

1000.0
800

900

1000

1100

1200

Wavelength (nm)

1300

1400

COB1100GD-16100S-X
Disclaimer
Product specifications and data shown in this product catalog are subject to change without notice for thepurposes of improving product performance, reliability, design, or otherwise.
Product data and parameters in this catalog are typical values based on reasonably up-to-date measurements.
Product data and parameters may vary by user application and over time.
Products shown in this catalog are intended to be used for general electronic equipment.

Products are notguaranteed for applications where product malfunction or failure may cause personal injury or death, including
but not limited to life-supporting / saving devices, medical devices, safety devices, airplanes, aerospaceequipment, automobiles, traffic control systems, and nuclear reactor control systems.

Technical Support Information
https://www.ushio.co.jp/en/led/technology/index.html

www.ushio.co.jp

led-sales@ushio.co.jp
2405①-NP