PreliminaryHigh Speed InGaAs + Si PIN PhotodiodeProduct No: PD2601SISMSFY2-0.3E

Sensitivity Wavelength Range: InGaAs 800-2600nm / SI 250-1100nm
The MTSM2601SISMF2-030 from Marktech, a high sensitivity and high reliability product series, is ideallysuited for applications requiring a wide spectral bandwidth. Custom packaging for this is also available.
FEATURESAPPLICATI ONS> High Speed Response> High Speed Optical Communications> Industrial Controls> Gas/Water Analysis> 5mm x 5mm Seam Welded Surface Mount Package> Active Area - InGaAs: 0.3mm Ф / Si: 0.43 x 0.43mm> Spectral Range Si: 250-1100 InGaAs: 800-2600nm> LIDAR> Medical

Absolute Maximum Ratings (Ta=25ºC)
ITE M SS YM B O L

R ATI N G S

UNIT

InGaAs Active Area

0.3Фmm

Si Active Area

0.43 x 0.43mm

Operating Temperature Range

Topr-40 to +85ºC

Storage Temperature Range

Tstg-40 to +125ºC

InGaAs Electrical & Optical Characteristics (Ta = 25ºC)
ITE M SS YM B O L

C ON D ITION SMINTYPM AXUNIT

Breakdown Voltage

VR

IR=100uA----1V

Sensitivity RangeλID

VR=0V

800--

2600

nm

VR=0V--

45--

Dark Current
CapacitanceID

VR=1V--

40--uAuAC

VR=0V--

160

pF

Capacitance
Responsivity

C

VR=1V--

20---R

λ=2400nm--

1.24--

Shunt Resistance
Quantum Efficiency

RS

VR=10mV

--

6.5--

A/W
kΩ

QE

λ=1840nm

--

72--

%

Dark Current

pF

2023-03-01

Global Headquarter,241 Noborito Tama-ku Kawasaki Kanagawa Japan 214-0014, w ww.optrans@optrans.com• PHONE: +81-44-932-691 • FAX: +81-44-932-8281 • EMAIL: info@optransamerica.com

1

High Speed InGaAs + Si PIN PhotodiodeProduct No: PD2601SISMSFY2-0.3E

Si Electrical & Optical Characteristics (Ta = 25ºC)
ITE M S

Breakdown Voltage
Forward Voltage

S YM B O LVRVRC O N D I TI O N S

MIN

TYP

M AXUNIT

IR=100uA

33

--

3V

IF=2mA

----

1.3

V

250

Sensitivity Range

λnm

Dark Current
Capacitance

VR=10V--

---

1100

ID

10nA

C

VR=5V, 1MHz--

5pF

Responsivity

R

λ=450nm, VR=0V

0.01

-----

A/W

ResponsivityR

λ=633nm, VR=0V

0.05

----

A/W

ResponsivityR

λ=900nm, VR=0V

0.08----A/W

2023-01-30

Global Headquarter,241 Noborito Tama-ku Kawasaki Kanagawa Japan 214-0014, w ww.optrans@optrans.com• PHONE: +81-44-932-691 • FAX: +81-44-932-8281 • EMAIL: info@optransamerica.com

2

High Speed InGaAs + Si PIN PhotodiodeProduct No: PD2601SISMSFY2-0.3E

Package Dimensions□5+0.15-0.1

METALLIZED

R0. 2(2.46)

PD2601C-0.3E②7162[0.43×0.43]

PD2601C-0.3E①
R0.2

S i - PD②

CERAMIC (BLACK)

0. 3 ±0. 05

0. 25 ±0. 1
1. 5 ±0. 254(0.64)

SEAL RING□3.1 ±0.1
φ2.5 ±0.1

35

Act ive Area:[ 0 . 43×0.43]

2. 54 ±0. 15

Si - PD
Active ①
A rea:( 2. 08)

81(Si-PD①)
4,83(PD2601①)
5(Si-PD②)
7(PD2601②)

1- Si-PD① Anode
2- NC
3- PD2601① Anode4- Si-PD/PD2601 Cathode com
5- Si-PD② Anode
6- NC
7- PD2601② Anode8- Si-PD/PD2601 Cathode com

Unit: mm, Tolerance: ±0.2
The information contained herein is subject to change without notice.

Global Headquarter,241 Noborito Tama-ku Kawasaki Kanagawa Japan 214-0014, w ww.optrans@optrans.com• PHONE: +81-44-932-691 • FAX: +81-44-932-8281 • EMAIL: info@optransamerica.com

2023-03-01

3

High Speed InGaAs + Si PIN PhotodiodeProduct No: PD2601SISMSFY2-0.3E

InGaAs Spectral Responsivity

InGaAs Quantum Efficiency

The information contained herein is subject to change without notice.

Global Headquarter,241 Noborito Tama-ku Kawasaki Kanagawa Japan 214-0014, w ww.optrans@optrans.com• PHONE: +81-44-932-691 • FAX: +81-44-932-8281 • EMAIL: info@optransamerica.com

2023-03-01

4

High Speed InGaAs + Si PIN PhotodiodeProduct No: PD2601SISMSFY2-0.3E

InGaAs Dark Current vs Reverse Voltage

InGaAs Forward Current vs Forward Voltage

The information contained herein is subject to change without notice.

Global Headquarter,241 Noborito Tama-ku Kawasaki Kanagawa Japan 214-0014, w ww.optrans@optrans.com• PHONE: +81-44-932-691 • FAX: +81-44-932-8281 • EMAIL: info@optransamerica.com

2023-03-01

5

High Speed InGaAs + Si PIN PhotodiodeProduct No: PD2601SISMSFY2-0.3E

Dark Current (A)Si Dark Current vs Temperature (Vr=10V)

Temperature (°C)

Si Spectral Responsivity

Responsivity (A/W)

Photodiode Responsivity by Series

Wavelength (nm)2023-03-01

Global Headquarter,241 Noborito Tama-ku Kawasaki Kanagawa Japan 214-0014, w ww.optrans@optrans.com• PHONE: +81-44-932-691 • FAX: +81-44-932-8281 • EMAIL: info@optransamerica.com

6