SHF Communication Technologies AGWilhelm-von-Siemens-Str. 23D • 12277 Berlin • Germany
Phone +49 30 772051-0 • Fax ++49 30 7531078
E-Mail: sales@shf.de • Web: http://www.shf.deDatasheet
SHF 115 APBroadband Amplifier

SHF reserves the right to change specifications and design without notice – SHF 115 APP V003 – Mar. 06, 2017

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Description
The SHF 115 AP is a three stage, wideband RF amplifier featuring flat gain and low group delay
variation. By use of proprietary monolithic microwave integrated circuits (MMICs) a 1 dBcompression point of 13 dBm and low noise figure are achieved.
In addition the amplifier is characterized by a single power supply requirement and a gain control
input for up to 3 dB gain reduction.

Applications


Optical Communications, Modulator Driver

High-Speed Pulse ExperimentsSatellite Communications



Research and Development

Antenna MeasurementsRF over fiber

Available Options
01: DC return on input (max. ±1.75 V, max. 35 mA)

1

02: Built-in bias tee on input (max. ±12 V, max. 220 mA)
03: DC return on output (max. ±1.75 V, max. 35 mA)

1

1

04: Built-in bias tee on output (max. ±12 V, max. 220 mA)

1

MP: Matches the phase of two amplifiers
MT: Special tuning available to optimize performance with E/O modulators

2

1The options 01 & 02 or 03 & 04 cannot be combined.
If an option is chosen, the maximum gain and the maximum output power might be reduced by up to 1 dB. The low frequency 3 dB Point might beincreased up to 70 kHz.

2

If this option is chosen, the maximum gain might be reduced by up to 3 dB.

SHF reserves the right to change specifications and design without notice – SHF 115 APP V003 – Mar. 06, 2017

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Specifications – SHF 115 APParameterUnitSymboldBm
VPin max

Min.

Typ.

Max.

CommentAbsolute Max Ratings
Maximum RF Input

00.6

peak to peak voltage

DC Voltage at RF Input

V±12

AC coupled input

DC Voltage at RF Output

V±12

AC coupled output

Positive Supply Voltage

V912

reverse voltage protected

Positive Supply Current

AIDD

0.55

0.6

Gain Control Voltage

VUGC

8.5-50Reduction by approx. 3dB
IGC <= 10 mA
pin open: max gain is achieved.

Case Temperature

4Tcase°C

104050Electrical Characteristics (At 40°C case temperature, unless otherwise specified)High frequency 3 dB point

GHzfHIGH

25Low frequency 3 dB point

kHzfLOWGain

dB

S2124

Output Power at 1 dB
Compression

dBm
V

P01dB

13
2.8

10 MHz...17 GHz

Output Power at 2 dB
Compression

dBm
V

P02dB

16
4.0

10 MHz...17 GHz

Output Power at 3 dB
Compression

dBm
V

P03dB

17.5
4.7

10 MHz...17 GHz

Input Return LossdB

S11-12-10< 20 GHz

Output Return LossdB

S22-10-9< 20 GHzRise Time/Fall Time

pstr/tf

20

Full Setup 320%...80%, 3 V ≤ Vout ≤ 5 VJitterpsJRMS

1.5

Full Setup 33 V ≤ Vout ≤ 5 VGroup Delay Ripple

ps±50

4…12 GHz, 100 MHz aperture

Power Consumption

W5060
inverting25

peak to peak voltage

peak to peak voltage

peak to peak voltage

59 V supply voltage

Mechanical Characteristics
Input Connector

SMA female

Output Connector

SMA female

Dimensions

mm

51x40x16
excluding connectors

4If operated with heat sink (part of the delivery) at room temperature there is no need for additional cooling.

3Measured with the following setup: SHF BPG 40 A -> DUT (SHF 115AP) -> Agilent 86100C with 50 GHz sampling head and precision timebase.

SHF reserves the right to change specifications and design without notice – SHF 115 APP V003 – Mar. 06, 2017

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Typical S-Parameters, Group Delay and Phase Response

Aperture of group delay measurement: 100 MHz

SHF reserves the right to change specifications and design without notice – SHF 115 APP V003 – Mar. 06, 2017

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Typical Binary Waveforms
23Measurements at 20 and 2.5 Gbps (PRBS 2 -1) had been performed using a SHF BPG 40 A and anAgilent 86100C DCA with Precision Time Base Module (86107A) and 50 GHz Sampling Head (83484A).
The measurements will be part of the inspection report delivered with each particular device.

Input Signal @ 20 Gbps

Output Signal @ 20 Gbps

Input Signal @ 2.5 Gbps

Output Signal @ 2.5 Gbps

SHF reserves the right to change specifications and design without notice – SHF 115 APP V003 – Mar. 06, 2017

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Handling Instructions
To operate the amplifier a positive supply voltage of approximately +9 V must be applied.
The gain can be adjusted by applying a voltage of 0 to -5 V. If this pin is left open, the amplifier will havemaximum gain. By reducing the gain the crossing will shift. Typical characteristics are shown in the following
diagram for an input voltage of 180 mV with 50% crossing.

1614121086
420-2-4

Gain [dB]
Crossing shift[%]0-1-2-3-4-5

Gain Control Voltage [V]SHF reserves the right to change specifications and design without notice – SHF 115 APP V003 – Mar. 06, 2017

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Typical Low Frequency Response (<1 MHz)

Typical Saturation power

Top (red): 3 dB compression;
Middle (green): 2 dB compression;
Bottom (blue): 1 dB compression

SHF reserves the right to change specifications and design without notice – SHF 115 APP V003 – Mar. 06, 2017

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50

25

59.1

136.9
143.6

Mechanical Drawing with Heat Sink

51

9.5

26
18.7
16.4
12.9

40

4.9

16.5

M4 (2x)

4.9

16.5

26
18.7
16.4

9.5
9

SHF AG Berlin4025 dB

SHF 115 AP45843

-+9V
0.6A

P03dB : 18 dBm

60kHz - 25GHz

0 ... -5Vall dimensions in mm

All dimensions in mm
For permanent mounting remove the heat sink from the amplifier. In that case please ensure that
adequate cooling of the amplifier is guaranteed. It is recommended to use thermal paste or a thermal gap
pad for the mounting. In order to separate the heat sink from the amplifier, remove the four screws on theheat sink. Please note, thermal paste is used between the heat sink and the amplifier housing.

SHF reserves the right to change specifications and design without notice – SHF 115 APP V003 – Mar. 06, 2017

Page 8/10Mechanical Drawing without Heat Sink

373

M2,5x5 (4x)314851

16.5

9.5

6.4
2.9

168.7

4.940

SHF AG Berlin

168.7

6.4

9.5
925 dBSHF 115 AP45843

-+9V
0.6A

P03dB : 18 dBm

60kHz - 25GHz

0 ... -5V

4.9
16.5
all dimensions in mm

Please ensure that adequate cooling of the amplifier is guaranteed.

SHF reserves the right to change specifications and design without notice – SHF 115 APP V003 – Mar. 06, 2017

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User Instructions
ATTENTION!
Electrostatic sensitive GaAs FET amplifier1.

To prevent damage through static charge build up, cables should be always discharged before
connecting them to the amplifier!

2.

Attach a 50 Ohm output load before supplying DC power to the amplifier!

3.

The supply voltage can be taken from any regular power supply and can be connected to the supply
feed-through filter via an ON / OFF switch.

4.

It make sense to use the minimum supply voltage. A higher one increases the power dissipation of theinternal voltage stabilizer.

5.

Using a 3 dB or 6 dB input attenuator will result in a 6 dB or 12 dB increase of the input return loss. For
minimal degradation of amplifier rise time, these attenuators should have a bandwidth specification of
more than the amplifier bandwith.

6.

High input voltages will drive the amplifier’s output stage into saturation, leading to waveform peakclipping.

7.

Saturated output voltages can only be used without damage while the amplifier is connected to a 50
Ohm precision load with a VSWR of less than 1.2 or better than 20 dB return loss.

8.

While using a reflective load the output voltage has to be reduced to a safe operating level according tothe magnitudes of the reflections.
ATTENTION: At radio frequencies a capacitive load can be transformed to an inductive one throughtransmission lines! With an output stage driven into saturation this may lead to the immediate
destruction of the amplifier (within a few ps)!

SHF reserves the right to change specifications and design without notice – SHF 115 APP V003 – Mar. 06, 2017

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