★★★ ＜第31回知的財産翻訳検定試験【第15回英文和訳】＞ ★★★
≪１級課題 -電気・電子工学-≫【解答にあたっての注意】
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問１．次の英文クレームを、日本語に訳してください。
1. An axial brushless DC motor comprising:a stator including a plurality of coils, a base of the stator defining a central
through-hole;a rotor including a magnet with a plurality of pairs of magnetic poles andadapted for movement relative to the stator in one or more full steps;
an elongate sleeve bushing extending through the stator, the sleeve bushingfurther defining an interior through-hole therein;
an elongate motor shaft extending through the interior through-hole of thesleeve bushing and including an upper end and a lower end, the lower end
extending through the interior through-hole of the stator;
a bearing mounting the motor shaft to the sleeve bushing for rotation
relative to the sleeve bushing and the base of the stator, the bearing
positioned against an end of the sleeve bushing, the end of the sleevebushing extending into the central through-hole defined in the base of thestator; anda generally Y shaped coil phase circuit including first, second, and third coilphase circuit segments with respective first ends coupled to each other at acommon connection point;
the coil phase circuit being adapted for moving the rotor on the upper end of
the motor shaft relative to the stator a fractional step less than the one ormore full steps and holding the rotor at the one or more fractional or fullsteps,

wherein each of the first, second, and third coil phase circuit segments areenergizable for holding the rotor at the one or more fractional steps between
the one or more full steps relative to the stator.
2. The axial brushless DC motor of claim 1, wherein the coil phase circuit is athree phase circuit adapted to switch the orientation of one or more of theplurality of pairs of magnetic poles of the rotor during operation of the motorand hold the rotor at a half step between the one or more full steps.

問２．次の英文は、ある特許明細書の従来技術の記載です。日本語に訳してください。
Computing systems typically employ data storage systems for storage andretrieval of data accessed by users. Various types of storage devices can beemployed in these data storage systems, such as hard disk drives (HDDs) orsolid-state drives (SSDs), among others. SSDs employ various underlying
storage technology, such as NAND flash arrays. Payload data stored in thesearrays is typically encoded using various error correction codes to ensure
more reliable data storage despite random read/write errors, interfacing
errors, and physical flaws in the underlying storage media. However, theseerror correction codes consume finite computing resources and take time toconverge to corrected data values during data read decoding.
Media and latency limitations of certain computer/server types or data
access styles might preclude encoding data with large error correction
overheads, due in part to latency involved in decoding processes. For
example, many users who use Internet services access content storage in
specific ways, where content is initially written and then that same content
is read many times when different clients need to consume the same content.
Such applications can include sharing of popular songs or videos on content
websites that are read many thousands of times in close temporal proximity
to one another. Moreover, content media servers and systems many times

forgo large random-access memory (RAM) caches in lieu of large data storage
devices due in part to cost.

問３．次の英文は、ある特許明細書の実施形態の記載です。図面を参照して、***(START)***から***(END)***までの部分を日本語に訳してください。
The following describes a process for fabricating a top-gate graphene field
effect transistor. Referring to FIG. 1(a), in some implementations,electrochemical deposition is performed using a three-electrode cell. Initially,a graphene layer 102 is formed on a substrate 104 using, e.g., exfoliation or
chemical vapor deposition. The graphene layer 102 is patterned using, e.g.,
electron beam lithography. A drain electrode 106 and a source electrode 108
are formed on the graphene using, e.g., electron beam lithography (EBL) andelectron beam evaporation (EBE). The substrate 104, the graphene 102, andthe electrodes 106, 108 are then immersed in a solution 110 in an inert
container 112, in which the solution includes, e.g., phenol and sulfuric acid.
***(START)***
During electrochemical deposition, the drain and source electrodes 106, 108
are connected together so that the graphene 102 and the drain and source
electrodes 106, 108 have the same electric potential. The graphene 102
functions as the working electrode. A voltage is applied to the drain electrode106 through a bond wire attached to the drain electrode 106. A potentiostat
114 controls the electric potential of the graphene 102 versus a silverreference electrode 116. A platinum wire is used as the counter electrode 118.
Electrochemical deposition of poly(phenylene oxide) can be accomplished byrepeatedly cycling the potential between the graphene 102 and the referenceelectrode 116. For example, referring to FIG. 1(d), a graph 120 shows anexample in which the potential cycles between about 0.1 V and 0.9 V. In thisexample, a triangular voltage waveform can be used, and the ramp rate canbe 100 mV/s. Other waveforms and ramp rates (or signal frequencies) can

also be used. The graph 120 shows cyclic voltammetry (CV) ofpoly(phenylene oxide) deposition on a graphene device comparing the firstcycle 122, second cycle 124, tenth cycle 126, and 360th cycle 128. In thisexample, in the first cycle 122, the current varies from about 0.1 to −3.2 µA,
in the second 124, the current varies from about 0.1 to −1.4 µA, in the tenthcycle 126, the current varies from about 0 to −0.3 µA, and in the 360th cycle
122, the current remains about 0 µA.
***(END)***In an inset, a graph 130 shows a curve 132 representing the logarithm of thecurrent at +0.9 V plotted vs. the cycle number. The curve 132 indicates thatthe current becomes very small after a few hundred cycles. Poly(phenyleneoxide) is non-conducting, so as more poly(phenyleneoxide) is deposited on thegraphene 102, the resistance becomes larger, and the current becomes
smaller. As the current decreases, the deposition rate of poly(phenyleneoxide) also decreases. This results in a self-limiting effect of theelectropolymerization, in which the thickness of the poly(phenylene oxide)stops increasing after a certain number of cycles. The final thickness ofpoly(phenylene oxide) is affected by several factors, such as theconcentration of phenol and sulfuric acid, the cycling potential, and thecycling frequency. The self-limiting effect also results in a self-leveling effectthat results in the poly(phenylene oxide) layer having a substantially
uniform thickness. During the electrochemical deposition, when there is
uneven thickness in the polymer layer, the deposition of the polymer occurs
faster at the thinner portions and slower at the thicker portions, eventuallyforming a substantially smooth and even polymer layer.