ADP86012W2
ADP46075W3Datasheet
Datasheet

Automotive-grade ACEPACK DRIVE power module, six pack topology
Automotive-grade ACEPACK DRIVE power module, sixpack topology
1200 V, 3.5 mΩ typ. SiC MOSFET gen.2 based
750 V, 1.6 mΩ typ. SiC MOSFET gen.3 based
FeaturesFeaturesACEPACK DRIVEACEPACK DRIVE••••••••

Designedfor automotive applications
AQG
324 qualified
1200Vblocking
voltage
750 V blocking voltage
3.5mΩ
mΩofoftypical
typicalRDS(on)1.6RDS(on)Maximumoperating
operativejunction
temperature
TJop
175 °C
Maximumjunctiontemperature
TJ =175=°C••••••

Verylow
lowswitchingswitchingenergyVeryenergy
Lowinductive
inductive
compact
designhigherpower
densityLowcompact
designfor foran anhigherpower
density
AMBsubstrate
substrate
improve
thermalperformance
SiSi
to to
improve
thermalperformance
3N
3N
4 4AMB

••
••
••
••

SiC
chip
sintered
to substrate
for improved
lifetime
SiCPower
PowerMOSFET
MOSFETchip
sintered
to substrate
for improved
lifetime
4.2
s insulation
4.2kV
kVDC
DC1 1
s insulation
Directlyliquid cooled
baseplateplatewithwithpinpin-fins
Direct cooled
Cu basefins
ThreeNTC
temperature
sensors
Threeintegrated
integrated
NTC
temperature
sensors

Application
Application••

Main inverter (electric traction)
Traction main inverter

Description
Description

Product status link
Product status link
ADP46075W3
ADP86012W2

The ACEPACK DRIVE is a compact sixpack module optimized for hybrid and electric
The ACEPACK
DRIVE isa compact
six pack
moduleoptimizedforon
hybridand electricvehiclestraction inverter.
This
power modulefeaturesswitches
basedsiliconvehiclestractioninverter.
Thispowermodulefeaturesswitches
basedonsiliconrd
carbide Power MOSFET 3 generation, are characterized by very low RDS(on), verynd generation, are characterized by very low R
carbidePower MOSFETDS(on), very
limitedswitchinglosses and2outstanding
performances in synchronous rectification
limitedswitchinglossesandoutstanding
performancesinsynchronousrectification
working mode. This will ensure superb efficiency in final application, saving battery
working mode.
This will ensure superb efficiency in final application, saving battery
recharging
cycles.
recharging cycles.
A copper base plate with pin-fin base structure make direct fluid cooling available forA copper
base platewith pin-fin
base
structure make direct fluid cooling available forthispower module
minimizing
thermalresistance.
this power module minimizing thermal resistance.
A dedicated pin-out has been developed to get the best switching performances andpress-fit
pins will
ensureconnection towithboard.
A dedicatedpin-out
hasoptimal
been developed
getdriving
the best
switching performances andpress-fit pins will ensure optimal connection with driving board.

Product summary

Product summary
Order code
ADP46075W3
Ordercode
Marking

ADP86012W2
ADP46075W3

Marking
Package

ADP86012W2
ACEPACK
DRIVE

Leads
type
Package

Press fit DRIVEACEPACK

Packing
Leads
type

Tray
Press fit

Packing

Tray

DS13814 - Rev 3 - February 2023
For further information contact your local STMicroelectronics sales office.

www.st.com

ADP46075W3
Electrical ratings

1

Electrical ratings
Table 1. Absolute maximum ratings of each switch
SymbolV(BR)DSS
VGS
ID(1)Parameter
Drain-source breakdown voltage

ValueUnit750

V

Gate-source voltage-10 to 22

Gate-source voltage (recommended operating values)-5 to 18

VContinuous drain current at TF = 75 °C (refer to TJ max = 175 °C, VGS = 18 V)

485

A

IDM

Repetitive peak drain current

950

A

PTOT

Total power dissipation at TF = 75 °C (refer to TJ max = 175 °C, VGS = 18 V)

704

W

TJ

Operating junction temperature range under switching conditions-40 to 175(3)

°C

(2)

1. Specified by design, not tested in production.
2. Pulse width limited by maximum junction temperature.
3. Maximum baseplate temperature has to be always limited to 125 °C.

Table 2. Thermal data of each switch
SymbolParameter

Min.

Typ.

Max.

Unit

RthJF (1)Thermal resistance, junction-to-fluid (flow rate = 10 LPM, TF = 75 °C, single switch)-0.129-°C/W

1. Simulated value considering 50% water/ 50% ethylene glycol cooling fluid. Refer to TN1412 "ACEPACK DRIVE assembly
instructions" for water jacket design

DS13814 - Rev 3

page 2/15

ADP46075W3
Electrical characteristics

2

Electrical characteristics
TJ = 25 ˚C, unless otherwise specified.
Table 3. Electrical characteristics of each switch
SymbolRDS(on)(1)ParameterTyp.

Max.

VGS = 18 V, ID = 460 A

1.6

2.05Static drain-source

VGS = 18 V, ID = 460 A, TJ = 175 °C

2.6

on-resistance

VGS = 18 V, ID = -460 A

1.5

VGS = 18 V, ID = -460 A, TJ = 175 °C

2.5VGS(th)Gate threshold voltage

IDSS

Zero gate voltage draincurrent

IGSS

Gate-body leakage
current

Ciss

Input capacitance

Coss

Output capacitance

Crss

Test conditions

VDS = VGS, ID = 40 mA

Min.

1.9

3.1

UnitmΩ

4.4

V

VGS = 0 V, VDS = 750 V

100μA

VGS = 0 V, VDS = 750 V, TJ = 150 °C(2)2mA

VDS = 0 V, VGS = -10 to 22 V

2µA

27.05

nF

2.13

nF

Reverse transfer
capacitance

0.16

nF

Qg

Total gate charge

984

nCQgs

Gate-source charge

323

nC

Qgd

Gate-drain charge

276

nC

VDS = 400 V, f = 1 MHz, VGS = 0 V

VDS = 400 V, ID = 460 A, VGS = -5 V to 18 V

1. RDS(on) is referred to switch level.
2. Specified by design, not tested in production.

Table 4. Switching energy of each switch
SymbolParameter

Test conditions
VDD = 400 V, VGS = -5 to 18 V, di/dton = 2.7 A/ns,Eon (1)Turn-on switching energy

RG(on) = 18 Ω, ID = 460 A
VDD = 400 V, VGS = -5 to 18 V, di/dton = 3.4 A/ns,RG(on) = 18 Ω, ID = 460 A, TJ = 175 °C
VDD = 400 V, VGS = -5 to 18 V, dV/dtoff = 4.2 V/ns,

Eoff

Turn-off switching energy

RG(off) = 8.2 Ω, ID = 460 A
VDD = 400 V, VGS = -5 to 18 V, dV/dtoff = 5 V/ns,RG(off) = 8.2 Ω, ID = 460 A, TJ = 175 °C

Min.

Typ.

Max.

-

24.2-

UnitmJ-

16.7--

17.2mJ-15.2-

1. Using active Miller clamp circuit.

DS13814 - Rev 3

page 3/15

ADP46075W3
Electrical characteristics

Table 5. Source-drain diode characteristics of each switch

Note:

DS13814 - Rev 3SymbolParameter

VSD

Forward on voltage droptrr

Reverse recovery time

Qrr

Reverse recovery charge

IRRM

Reverse recovery current

Erec

Test conditions

Min.

Typ.

Max.

Unit-

4.3

-

V-

37.3

-ns

VDD = 400 V, VGS = -5 to 18 V, RG(on) = 18 Ω,-1.9-µCdi/dton = 2.7 A/ns, ID = 460 A-87.3-A

Reverse recovery energy-0.24-mJtrr

Reverse recovery time

-48.6-nsQrr

Reverse recovery charge

VDD = 400 V, VGS = -5 to 18 V, RG(on) = 18 Ω,-4.13-µC

IRRM

Reverse recovery current

di/dton = 3.4 A/ns, ID = 460 A, TJ = 175 °C-

140.9-

AErec

Reverse recovery energy-0.64-mJ

VGS = -5 V, ID = 460 A

Values are calculated taking in account an active Miller clamp circuit.

page 4/15

ADP46075W3NTC

3NTC
Table 6. Absolute maximum ratings for NTC temperature sensor, considered as stand-alone
SymbolR25

Rated resistance

R100

Rated resistance

ΔR/R

Deviation of R100

B25/50
B25/80DS13814 - Rev 3

Parameter

B-constant

Test conditionMin.

T = 25 °C
T = 100 °C

Typ.

Max.

Unit

5.0kΩ

493

Ω

-5+5%

3375

K3411

K

page 5/15

ADP46075W3
ACEPACK DRIVE module details

4

ACEPACK DRIVE power module details
Table 7. Ratings for module
SymbolVISO

Parameter

Value

Unit

Isolation voltage (f = 0 Hz, t = 1 s)

4.2

kV

Internal isulation (class 1, IEC 61140)

Si3N4

Baseplate module material

DS13814 - Rev 3Ni plated, Cu baseplate
Terminal to heat sink

9.0

Terminal to terminal

9.0

Terminal to heat sink

4.5

Terminal to terminal

4.5

dcreepCreepage distancedclearClearance distance

CTI

Comparative tracking index>200VLs

Typical stray inductance drain to source module loop

10nH

Rs

Typical module lead resistance, terminals to chip

0.5mΩ

Tstg

Storage temperature range-40 to 125°C

mm

mm

page 6/15

ADP46075W3
Electrical characteristics (curves)

5

Electrical characteristics (curves)
Figure 1. Typical output characteristics (TJ = -40 °C)
ID(A) VGS= 20 V

GADG020220231546OCH-40

Figure 2. Typical output characteristics (TJ = 25 °C)
ID(A) V = 20 V
GS

GADG020220231546OCH_25

14 V

16 V
690

690
18 V
14 V

460

460

12 V

16 V

12 V
230

230
18 V

001234VDS (V)Figure 3. Typical output characteristics (TJ = 175 °C)
ID(A)

GADG020220231546OCH_175

VGS= 20 V

123VDS (V)Figure 4. Typical reverse conduction characteristics(TJ = -40 °C)
ID(A)

GADG020220231547RCC-40

VGS= -5 V

12 V690-230

18 V
460

000V
14 V

16 V

-460
16 V-3 V

230-690
18 V00123VDS (V)Figure 5. Typical reverse conduction characteristics(TJ = 25 °C)
ID(A)

GADG020220231547RCC25VGS= -5 V

-230

-920
-6-5-4-3-2-1

VDS (V)

Figure 6. Typical reverse conduction characteristics(TJ = 175 °C)
ID(A)

GADG020220231548RCC175

VGS= -5 V

-230
-3 V
0V-460

-3 V

-460

0V

16 V

16 V-690-690
18 V-920-6DS13814 - Rev 318 V-5-4-3-2-1VDS (V)-920-5-4-3-2-1VDS (V)page 7/15

ADP46075W3
Electrical characteristics (curves)

Figure 7. Typical transfer characteristics
ID(A)GADG020220231548TCH

VDS= 5 V

Figure 8. Normalized breakdown voltage vs temperature
V(BR)DSS(norm.)

GADG020220231549BDV

1.02690
TJ= 25 °C

1.00
460
TJ= 175 °C

0.98

230

0.96

TJ= -40 °C

0024681012VGS (V)Figure 9. Typical switching energy vs drain current
GADG020220231552SLCE(mJ) VDD = 400 V, RG(on) = 18 Ω,0.94-7530175

TJ (°C)

VGS = -5 to 18 V

101000125

Eon

15Eoff2075

GADG020220231553SLG
E(mJ) VDD = 400 V, ID = 460 A,

20Eon

25Figure 10. Typical switching energy vs gate resistance

RG(off) = 8.2 Ω, VGS = -5 to 18 V

40-25

Eoff

5Erec

230460690

ID (A)

Figure 11. Typical switching energy vs temperature
GADG020220231554SLTE(mJ) VDD = 400 V, RG(on) = 18 Ω, RG(off) = 8.2 Ω,
VGS = -5 to 18 V, ID = 460 A
2504Erec816RG (Ω)

Figure 12. Typical switching energy vs bus voltage
GADG020220231555SBVE(mJ) RG(on) = 18 Ω, RG(off) = 8.2 Ω,
VGS = -5 to 18 V, ID = 460 A

302012EonEon

1520

Eoff

Eoff

1010500DS13814 - Rev 3

Erec

50

100150TJ (°C)

0200

Erec

300

400500VDS (V)

page 8/15

ADP46075W3
Electrical characteristics (curves)

Figure 13. Typical capacitance characteristics
C(nF)

Figure 14. Typical gate charge characteristics
VGS(V)GADG020220231556CVRCissGADG020220231557QVG

VDD = 400 V, ID = 460 A

1510 1
10Coss

510 0
f = 1 MHz

10 -1
10 -1

0Crss

10 0

10 1-50

VDS (V)

10 2

Figure 15. Typical transient thermal impedance
ZthJF(°C/W)
0.12

200

400

600

800

Qg (nC)

Figure 16. Typical thermal resistance vs flow rate
RthJF(°C/W)GADG300820220932ZTH

GADG300820220938VTHSingle pulse, TF = 75°C
flow rate = 10 LPM

0.137

0.10
0.08

TF = 75°C
0.133

0.06
0.04

0.129

0.02
0.00
10-4

10-3

10-2

10-1

0.125
4t(s)

100681012LPM

Figure 17. Typical NTC resistance vs temperature
R(Ω)

GADG120120211025NTC

10 410 310 2DS13814 - Rev 30255075100125T(°C)

page 9/15

ADP46075W3Topology, pin description and positioning

6Topology, pin description and positioning
Figure 18. Topology, pin description and positioning

P2P3

D6T5

G6

D4T3W

D2T1

S2-1, S2-2

S4-1, S4-2

VU

D5

D3

D1

G5

G3

G1

S5-1, S5-2

S3-1, S3-2

S1-1, S1-2

N3T2

G2

G4

S6-1, S6-2

P1

T4

T6

N2N1Figure 19. ACEPACK DRIVE PCB drawing (dimensions are in mm.)DM00518615_PCB_Rev6

DS13814 - Rev 3

page 10/15

ADP46075W3
Package information

7Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.

DS13814 - Rev 3

page 11/15

ADP46075W3
ACEPACK DRIVE package information

7.1

ACEPACK DRIVE package information
Figure 20. ACEPACK DRIVE short tab package outline (dimensions are in mm.)DM00518615_Rev6

DS13814 - Rev 3

page 12/15

ADP46075W3

Revision history
Table 8. Document revision history
DateRevision

14-Sep-2021

119-Oct-2021

2ChangesFirst release.
Updated Table 2. Electrical characteristics of the single switch.
Minor text changes.
Modified typical RDS(on) value

13-Feb-2023

3

Modified the entire Section 1 Electrical ratings
Added Section 5 Electrical characteristics (curves)
Minor text changes.

DS13814 - Rev 3

page 13/15

ADP46075W3
ContentsContents
1Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33NTC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .54ACEPACK DRIVE power module details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76Electrical topology and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

7Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
7.1ACEPACK DRIVE package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

DS13814 - Rev 3

page 14/15

ADP46075W3

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© 2023 STMicroelectronics – All rights reserved

DS13814 - Rev 3

page 15/15