2SC1923TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)

2SC1923High Frequency Amplifier Applications
FM, RF, MIX, IF Amplifier Applications

Unit: mm•

Small reverse transfer capacitance: Cre = 0.7 pF (typ.)•Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)

Maximum Ratings (Ta = 25°C)
Characteristics

SymbolRating

Unit

Collector-base voltage

VCBO

40V

Collector-emitter voltage

VCEO

30

V

Emitter-base voltage

VEBO

4V

Collector current

IC20mABase current

IB4mA

Collector power dissipation

PC100mW

Junction temperature

Tj125°C

Storage temperature range

Tstg−55~125°C

JEDEC

TO-92

JEITA

SC-43

TOSHIBA

2-5F1B

Weight: 0.21 g (typ.)Electrical Characteristics (Ta = 25°C)
Characteristics

SymbolTest Condition

MinTyp.

Max

Unit

Collector cut-off current

ICBO

VCB = 18 V, IE = 0



0.5µA

Emitter cut-off current

IEBO

VEB = 4 V, IC = 0



0.5µA

VCE = 6 V, IC = 1 mA

40



200

DC current gainhFE(Note)

Reverse transfer capacitance

CreVCE = 6 V, f = 1 MHz

0.70pF

Transition frequency

fTVCE = 6 V, IC = 1 mA

550



MHzCc･rbb’

VCE = 6 V, IE = −1 mA, f = 30 MHz

30psNoise figureNF

2.54.0*dBPower gain

Gpe

VCE = 6 V, IE = −1 mA, f = 100 MHz,Figure 1

1518



dB

Collector-base time constantNote: hFE classification

R: 40~80, O: 70~140, Y: 100~200 (* NF = 5.0dB max)

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L1: 0.8 mmφ silver plated copper wire, 4 T, 10ID, 8 LENGTH

Figure 1NF, Gpe Test Circuity Parameter (typ.)(1)

Common emitter (VCE = 6 V, IE = −1 mA, f = 100 MHz)
Characteristics

SymbolTyp.

Unit

Input conductance

gie

2.9mS

Input capacitanceCie

10.2pF

Reverse transfer admittance

yre

0.33

µS

Phase angle of reverse transferadmittanceθre−90°Forward transfer admittance

|yfe|

40mS

Phase angle of forward transferadmittanceθfe−20°

Output conductancegoe45µS

Output capacitance

Coe

1.1pF

(2)

Common base (VCE = 6 V, IE = −1 mA, f = 100 MHz)
Characteristics

SymbolTyp.

Unit

Input conductance

gib34mS

Input capacitanceCib−10pF

Reverse transfer admittance

yrb

0.27

µS

Phase angle of reverse transferadmittance

θrb

−105°

Forward transfer admittance

|yfb|

34mS

Phase angle of forward transferadmittance

θfb

165

°

Output conductance

gob

45

µS

Output capacitance

Cob

1.1

pF

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RESTRICTIONS ON PRODUCT USE

000707EAA• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physicalstress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards ofsafety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure ofsuch TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions andconditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life orbodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane orspaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in thisdocument shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or otherrights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.

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