PROVEN COMPONENTS. EXCELLENT RESULTS.

COMPONENTS FOR EMERGING TECHNOLOGIESHOLLOW CATHODE SOURCE I LINEAR ORGANIC EVAPORATORLINEAR PECVD SOURCE/CCP I HWCVD/CAT-CVD/ICVDPROVEN COMPONENTS.
EXCELLENT RESULTS.
FOR YOU.

Simulation-Driven Product Development

OUT NOW!

Our components are now free
to explore new horizons.

WITH YOU.

Vacuum System Dynamics
for Complex Deposition Machines
Matlab/SIMSCAPE
The conceptual design of complex and dynamic vacuum systems isextremely demanding. VON ARDENNE has accepted this challenge
and has developed a MATLAB/Simscape library to model and simulate
vacuum dynamics either for single compartments or overall simulations
for complex vacuum deposition machines.VON ARDENNE has more than
40 years of experience in vacuum deposition and outstanding expertisein multiscale simulation to feature highly optimized system performanceand to ensure best process quality originated from component design.
We accelerate product development and upgrades by reducing theengineering effort with cutting-edge modelling and simulation for productplanning for your individual process solution and feasibility studies for
upgrading running systems.

Low-Pressure Gas Flow for Best Gas Distributions

Plasma Process and Magnetic Field
for Excellent Film Growth

DSMC – Direct Simulation Monte Carlo
The simulation of low-pressure gas distributions in process cambers requires special numerical methods and a highly computational effort. The
DSMC method is applied already in the construction and design phase at

What are you looking for in a supplier of components and processsolutions? Experience? Reliability? A proven track record?
VON ARDENNE equipment is used in over 50 countries. We haveestablished an installed base of hundreds of coating systems worldwide,
ranging from small tools to equipment for large-area coating applications.
Every day, our customers are facing the challenge of staying in a leading
position. Why do they choose VON ARDENNE Process Solutions as theirpartner? Consider our keys to success:Field Experience – Our technical team is comprised of engineers who
have been there, in the field, delivering results. Not only does this mean
we know what it takes to get the job done, in many cases we have done
it before.
Simulation & Modeling – For new applications, we can guide theprocess design with extensive simulation and modeling capabilities.
From mechanical stress, to thermal modeling, to magnetic field modeling,
to charged particle motion, our team can simulate your process before
we begin to ensure the highest chance of success.
Sampling Capability – VON ARDENNE has over 20 machines that aresuitable for sampling. From small cluster tools to large in-line systems,
we can use demonstration runs to further assure you that your process
will deliver the results you need once installed.
In-House Assembly & Quality Control – VON ARDENNE builds all ofour products in our facility in Germany. We conduct the most demanding
quality and functional tests in the industry before shipping our products
to you. We meet or exceed most of our competitor’s specifications fortechnical performance and reliability.

PICMC – Particle in Cell Method

VON ARDENNE in order to achieve the best gas distributions.

Cutting-edge thin-film technology is characterized by film homogeneity,high target utilization, film-optimized process design and other technological requirements. At VON ARDENNE, plasma and magnetic field simulations are used to analyze and improve the decisive physical process
responsible for the film growth.

Optical Simulation
for Outstanding Film Properties

Finite Element Simulations
for Best Coating Results

Ray Tracing and Thin-Film Properties

Mechanical, Thermal, CFD, Multi-Physics

Optical simulations are widely used to achieve the most efficient designfor VON ARDENNE equipment with flash-lamp based annealing andpatterning technology. Furthermore, the parameters of thin films are
optimized using simulation methods so that the overall optical properties
meet the requirements.

FE simulations for the analysis and optimization of different physicalprocesses in combination with many years of experience are essential
prerequisites for VON ARDENNE coating systems to meet the high quality
requirements of our customers.

Process Knowhow – By combining our hardware and process control
solutions, we can deliver the highest performing processes to the mostdemanding specifications. Whether you are looking for the best material
properties, high rates, uniformity, utilization, or all of the above we candeliver a process that meets your requirements.
Technology Knowhow – Beyond the local coating processes,
VON ARDENNE offers state-of-the-art machine control solutions. From
optical inspection to automated process adjustment, we add the final
pieces of technology to make not only your local process run, but tomake your machine perform – to deliver a product as you need it, when
you need it.
Worldwide Competence Centers – A truly global organization,
VON ARDENNE’s subsidiaries can provide integration and startup support,
service, and training. When you need it, help is always close at hand.
VON ARDENNE is more than a component supplier, we are a solution
provider. Let us put our experience to work for you.
Mission – Our mission is to create value by bringing our industry leading
technology and process experience to our customers.
We want to achieve that by offering state-of-the-art hardware solutions
with best-in-class performance specifications and reliability. Furthermore,
we offer advanced process control hardware and software solutions tocontrol processes of single sources or in complex layer stacks settings.
It is our aim to deliver an excellent process result according to yourspecifications and timeline. And we are confident that we can offer you
what you are looking for in a supplier.

HCS Hollow Cathode Source

LOE Linear Organic Evaporator

VON ARDENNE has developed a broad portfolio of plasma treatment
sources. Surface treatment is often used as pre-treatment in theprocess of record (POR) in order to clean, remove or activate thetopmost sheet and to create an optimal interface for the next layer thatis to be deposited. This is necessary because the substrate surface
is often not well defined and shows various residues, like oxides andhydroxides of the substrate material, water from the environmental air
moisture, adsorbed gases and residual contaminants from previous
processes. These impediments may prevent a reliable mechanicalor functional layer attachment. Two of our components for surface
treatment are the Linear Ion Source LION® and the HCS.

The VON ARDENNE LOE is a component that thermally evaporates
organic material in a closed crucible. The vapor is distributed througha heated pipe in the direction across the substrate and released to thesubstrate through a linear nozzle array.
All parts that are in contact with the organic vapor – primarily crucible
and nozzle pipe – are made of ceramics that are completely inert to the
OLED materials. The crucible and nozzle pipe are heated to a temperature
above the condensation point of the organic materials.
The surfaces facing the substrate are shielded by directly cooled copperparts to minimize the thermal load on the OLED substrate. The systemenables the inert loading and unloading of air-sensitive evaporationmaterials.

The patented Hollow Cathode Source HCS is characterized by ahollow structure and an integrated anode. Species generation is extensively independent from the substrate or, respectively, the carrier andoccurs in front of the cathode. The substrates can either be electricallyconductive or insulating.
The electrons are confined between the potential drops on the cathode’s trench walls. This increases the gas ionization and, therefore, theplasma density. The superposing of plasma in the trenches result in avery intense, bright plasma below the electrode plate.
Cross section of plasma generation principle in a HCS structure

10

-5
-10

0

20
10
Distance [mm]302.2E+11
electrondensity [cm-3]

normaized RF amplitude
electrode [%][mm]

1.1E+110

Beyond that, the tool can be used for the evaporation of small
molecule organics for OLED devices. Another possible application is theevaporation of Pbl2 and other perovskite materials for the manufacturingof perovskite photovoltaic cells.
Furthermore, the Linear Organic Evaporator can be used to create easy
to clean (ETC) coatings by the evaporation of water and oil repellent
perfluoropolyethers and other ETC chemicals.

RF amplitude stability in a broad pressure range
at constant power, at constant electrode-substrate distance and atconstant gas flow

0.0E+00

5This component can be used for the evaporation of thermally sensibleorganic materials on rigid or flexible substrates for OLED or organic solar
cell applications.

100
80
60
40
20
0

0

20

Electrode flat design

40

60

Electrode HC design 1

80

100

[Pa]

Electrode HC design 2

 FEATURES

 BENEFITSĵ Hollow cathode design, substrate-independent

ĵ Simple & scalable design for robust behavior & easy customization

ĵ High electron densities and ionization efficiencies facilitate a highradical density for processing

ĵ Can compete with CCP and ICP in high density plasma processing
and at lower costs compared to ICP FEATURES

 BENEFITSĵ RF and VHF processing

ĵ Evaporation of small-molecule materials

ĵ Low generator powerĵ Evaporation of solid or fluid precursors

ĵ Linear organic source enables inline processing of organic devices
at high throughput

ĵ Low discharge voltage for gentle processingĵ Single, co-, or triple evaporation

ĵ Maintenance free (recommended sealings exchange after 5 years)

ĵ Vertical or horizontal operation

ĵ Broad process window:

ĵ Substrate width up to 1200 mm

ĵ Scalable source for surface cleaning, activation and etchingĵ Coating of thin films is applicable for certain front part designs
ĵ To be used for moving and static substrates
ĵ Continuous sheet by sheet, carrier by carrier or roll-to-roll processingĵ Integrated gas shower with optional cross flow featureĵ Front part: quickly changeable, highly adoptable trench design
ĵ Operation modes: face-up, face-down and verticalĵ Working pressure depends less from electrode-substratedistance

ĵ freely adjustable electrode distance to match processĵ RF amplitude is nearly constant over a broad pressure range

ĵ Conventional CCP can be mimicked (flat front, integrated gas shower)ĵ Optimized thermal design minimizes heat impact on evaporantand substrate for processing of sensitive organics
ĵ Superior homogeneity and stability of rate allows precise optimization of organic stacks to produce highest efficiency OLED and OPV
devicesĵ High material utilization of costly organics keeps product costs inacceptable range

ĵ A change in bias and RF amplitude by alternating RF power isless pronounced compared to conventional CCP CVD

ĵ 100 % inert materials in vapor path

 TECHNICAL DATA TECHNICAL DATA

Subject to change without notice due to technical improvement.

Subject to change without notice due to technical improvement.

Effective substrate widthPower supply
Substrate temperature

up to 3300 mm
13.56 MHz up to 80 MHz
up to 400°C (higher on request)

Electrode distanceOperation pressure
Treatment gases
Electron density/energy

manually adjustable
1 Pa to 1000 Pa = 0.01 mbar to 10 mbar
CxFy, NF3, SF6, H2, O2, Ar, F2, etc.
109 cm-3 to 1011 cm-3/ 1eV

Source setup
Substrate width
Source-to-substrate distance

single and co-evaporation
300 mm to 1200 mm
120 mm to 250 mm

Operating temperatureDynamic deposition rate Alq3
Dynamic deposition rate α-NPD
Cross thickness homogeneity
Rate stability
Crucible volume

100 °C to 700 °C
200 nm*m/min
200 nm*m/min±2%±2%
250 cm3 to 2000 cm3

LINEAR PECVD SOURCE/CCP

HWCVD/CAT-CVD/ICVD

Apart from physical vapor deposition (PVD) sources, VON ARDENNE offers
various chemical vapor deposition (CVD) sources. The CVD technology
enables certain layer characteristics which can either not be obtainedwith PVD at all, or only at high effort and costs. VON ARDENNE supplies
physically-enhanced CVD (PECVD) sources with particular, tweaked
matchboxes and generator systems, as well as gas supply systems.

Pioneered by Prof. Matsumura in 1983, catalytic CVD is a very effective
deposition technology. Driven by a hot wire, precursor molecules areexothermically dissociated, activated and finally deposited on a substrate.
This deposition method is not plasma enhanced, therefore accelerated
ions do not exist. A very smooth, highly conformal deposition with very
low internal layer stress can be accomplished at high deposition rates.

Remark: For static mode PECVD chambers and sources, please consult the
VON ARDENNE Modular Process Systems brochure.

The Linear PECVD source is similar to standard static capacitively coupledplasma electrodes. However, this particular VON ARDENNE source is run ininline dynamic mode: The substrate, carrier or web is permanently moved
past the electrode and continuously coated.

Even though it requires major mechanical and electrical efforts to coatlarge substrates homogeneously in static mode by CCP CVD, the linear
PECVD source reduces the parameter space in a one-dimensional task.
Even deposition scenarios with the application of very high frequencies(VHF) for higher deposition rates can be neatly dealt with. In principal, allstatic lab-scale CCP CVD processes can be easily transferred to highthroughput dynamic coating by this PECVD source.
The CCP CVD source is equipped with an integrated sidelong gas supply
and distribution system and a process gas extraction system. The
harmonized interplay of gas supply, electrode and gas extraction permits
homogeneous coating on the moving substrate. The source can be cleaned
by standard etching methods, facilitating the use of gases like O2, SF6, NF3,
F2 or CxFy.
It is available in steel or aluminum. The particular, tweaked matchbox is
an integral part of this device. Thermocouples provide additional process
surveillance.

 FEATURES

 BENEFITSĵ Capacitively coupled dynamic PECVD for moving substrates

Using hot wires to do plastic polymerization out of the monomer phasewithout solvents is referred to as initiated CVD or iCVD, respectively, if athermally labile initiator is additionally fed into the stream of monomers.
This production method was initially explored by Prof. Karen K. Gleason. It
allows controlling finely the possible reaction pathways and fully retaining
the polymer characteristic. By depositing polymers from the vapor phase,many wetting and solution effects are avoided, and conformal films can becreated.

quick to install wire subcomponent, which facilitates shorter downtimes bysimply exchanging the entire subcomponent, if necessary.
In order to have a longer productive coating time, the HWCVD source
can be equipped with independent sub-sources. In the case of wire
degradation, a currently running sub-source can be switched off while
another sub-source overtakes the process. The source can optionallybe equipped with a pyrometric measuring device for e.g. precise wire
temperature readings.

VON ARDENNE offers hot wire sources for catalytic CVD and iCVD
applications. For inline and dynamic deposition processes a particular line
source is available. It consists of a especially designed source flange and a

 FEATURES

 BENEFITSĵ Inorganic (e.g. SiH4) and organic (e.g. CxHy, plastic monomers) precursors usableĵ Divided source design with separated wire mounting for quick
exchange and quick process restart – the uptake flange simply
stays on the lid or doorĵ Integrated gas distribution systemĵ Continuous sheet by sheet, carrier by carrier or roll2roll processingĵ Wires can be energized in selectable form which can be used toprolong coater’s productive uptime

ĵ Continuous sheet by sheet, carrier by carrier or roll-to-roll processing

ĵ Scalable high-throughput option for all state-of-the-art CCP CVD
processes

ĵ Integrated sidelong gas distribution systemĵ Dynamic deposition on various substrates

ĵ Integrated process gas extraction systemĵ Enables high layer homogeneities

ĵ Free operation modes: face-up, face-down and verticalĵ Integrated thermocouples

ĵ No plasma process: No ion bombardment, no field accelerated
electrons and therefore smooth and highly conformal layer deposition with low internal stressĵ Permits large area deposition at RF and VHF

ĵ Optional pyrometer for process control and surveillanceĵ Inherently free of dust​ĵ Adjustable electrode distance to match processĵ For plasma chemical etching, surface engineering and material deposition

ĵ Free operation modes: face-up (limited), face-down (limited) andverticalĵ Adjustable wire distance to match processĵ Long campaign deposition runs for different set-ups and materials

ĵ Deposition rate up to factor 10 higher than PECVD processes

ĵ High durability

ĵ No RF equipment

ĵ Maintenance free (recommended sealings exchange after 5 years)

ĵ High gas utilization of 40 % to 80 % and very low parasitic deposition in pumps and ductwork

ĵ No starting layer on substrate

 TECHNICAL DATA TECHNICAL DATA

Subject to change without notice due to technical improvement.

Subject to change without notice due to technical improvement.

Substrate widthPower supply
Substrate temperature
Electrode distance

up to 3300 mm
13.56 MHz to 80 MHz (higher on request)
up to 400°C (higher on request)
manually adjustable

Operation pressure
1 Pa to 1000 Pa = 0.01 mbar to 10 mbar
Process gases
SiH4, H2, NH3, CxHy, SF6, O2, NF3, F2, CxFy, etc
Doping gases
Dopant hydrides (B2H6, PH3, etc.) , TEB, TMB, TMP
Layer thickness inhomogeneity± 1 % to 3 %Dep. rate silicon (a-Si/µc-Si)
Dep. rate SixNy
Dep. rate PTFE
Substrate widthPower supply

1 nm/s to 12 nm/s *3 nm/s to 7.3 nm/s **2.2 nm/s to 6.1 nm/s ***up to 1600 mm (higher on request)
DC or AC (50 Hz to 60 Hz)

Substrate temperature
wire distanceOperation pressure
Layer thickness inhomogeneity

up to 400 °C (higher on request)
manually adjustable
10-3 to 101 mbar
± 1 % to 3 %Ref. literature:*) A.H.Mahan/ Solar Energy Materials & Solar Cells 78 (2003) 299–327**) R.E.I. Schropp / Thin Solid Films 595 (2015) 272–283***) Hilton G. Pryce Lewis†, Jeffrey A. Caulfield‡, and Karen K. Gleason*† /Langmuir, 2001, 17 (24), pp 7652–7655

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CHANDLER

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KULIM

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WHO WE ARE & WHAT WE DO
VON ARDENNE develops and manufactures industrial equipment for vacuum
coatings on materials such as glass, wafers, metal strip and polymer films. These
coatings give the surfaces new functional properties and can be between one
nanometer and a few micrometers thin, depending on the application.

We supply our customers with technologically sophisticated vacuum coating
systems, extensive expertise and global service. The key components are developed
and manufactured by VON ARDENNE itself.
Systems and components made by VON ARDENNE make a valuable contribution toprotecting the environment. They are vital for manufacturing products which help touse less energy or to generate energy from renewable resources.

Our customers use these materials to make high-quality products such asarchitectural glass, displays for smartphones and touchscreens, solar modules andheat protection window film for automotive glass.

SALES
CONTACTSSERVICE
CONTACTSWORLDWIDE SALES AND SERVICEVON ARDENNE GmbH (headquarters) I Am Hahnweg 8 I 01328 DRESDEN I GERMANY
Sales: +49 (0) 351 2637 189 I sales@vonardenne.biz
Service: +49 (0) 351 2637 9400 I support@vonardenne.biz
VON ARDENNE Vacuum Equipment (Shanghai) Co., Ltd. I
VON ARDENNE Malaysia Sdn. Bhd. I+60 4408 0080 I

VON ARDENNE Japan Co., Ltd. I Tokyo office I+81 3 6435 1700 I

VON ARDENNE North America, Inc. I Ohio office I
VON ARDENNE North America, Inc. I Arizona office I
VON ARDENNE Vietnam Co., Ltd. I+86 21 6173 0210 I+86 21 6173 0200 I sales-vave@vonardenne.biz; support-vave@vonardenne.biz+60 4403 7363 I sales-vama@vonardenne.biz; support-vama@vonardenne.biz+81 3 6435 1699 I sales-vajp@vonardenne.biz; support-vajp@vonardenne.biz+1 419 386 2789 I+1 480 726 5470 I+1 419 873 6661 I sales-vana@vonardenne.biz; support-vana@vonardenne.biz+1 480 855 0947 I sales-vana@vonardenne.biz; support-vana@vonardenne.biz+60 124 23 7353 I sales-vavn@vonardenne.biz; support-vavn@vonardenne.biz

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ENGLISH 01/2021