Deterministic single ion implantation and defect engineeringstudies using a focused beam of highly charged ionsPaul Räcke1,2, Jan Meijer2,3, Daniel Spemann1,2
1 Leibniz Institute of Surface Engineering (IOM), Permoserstr. 15, 04318 Leipzig, Germany
2 Leibniz Joint Lab “Single Ion Implantation”, Permoserstr. 15, 04318 Leipzig, Germany
3 Applied Quantum Systems, Felix-Bloch Institute for Solid-State Physics, Universität Leipzig,

Linnéstraße 5, 04103 Leipzig, Germany
Presenting author contact: paul.raecke@iom-leipzig.de
https://www.iom-leipzig.de/en
https://www.iom-leipzig.de/en/research/interdepartmental-units/tool-development/translate-to-englishentwicklung-der-deterministischen-ionenimplantation-fuer-anwendungen-in-derquantentechnologie.html

Deterministic single ion implantation will be a key to enable novel solid state-based
quantum technologies based on e.g., donors in silicon, or NV or other colour centres
in diamond, or related materials (Sic, GaN, …). “Deterministic” means, that every
single ion arriving at a specific location at the sample during the ion implantation
process is counted, which is necessary to fabricate e.g. large scale qubit arrays.
At the Leibniz Joint lab in Leipzig, we have developed a new, worldwide uniquedeterministic single ion implanter. It was constructed by combining a commerciallyavailable focused ion beam (FIB) machine with an electron beam ion source (EBIS),
which selectively produces ions of low and high charge states of various species,
such as noble gases, hydrogen, nitrogen and soon phosphorous, with nanoscale
focus at an acceleration potential of 6 to 15 kV [1].
On the one hand, this setup is used for deterministic single ion detectionexperiments, employing either the integrated ion beam induced charge (IBIC) system(collaboration with University of Melbourne, Prof. David N. Jamieson et al.) [2,3].
In parallel, a single ion pre-detection scheme based on image charge detection isdeveloped to be implemented in the future [4].
On the other hand, selecting different ion charge states in the ion source enables toconveniently vary the implantation energy from less than 10 up to several hundred
keV, which is remarkable using such a compact setup. This is beneficial forsystematic defect engineering studies in any material, as we exemplify by direct
writing of vacancies in different depths for NV-centre creation in diamond [5].
[1] Räcke P et al (2020) Nanoscale ion implantation using focussed highly charged ions, New. J. Phys. 22,083028, https://doi.org/10.1088/1367-2630/aba0e6[2] Jakob AM et al (2021) Deterministic Shallow Dopant Implantation in Silicon with Detection Confidence UpperBound to 99.85% by Ion–Solid Interactions, Adv. Mat. 34, 2103235,
https://doi.org/10.1002/adma.202103235[3] Robson SG et al (2022) Near-Surface Electrical Characterisation of Silicon Electronic Devices Using Focused
keV Ions. https://doi.org/10.48550/arXiv.2201.11339[4] Räcke P, Meijer, J, Spemann, D (2022) Image charge detection of ion bunches using a segmented, cryogenicdetector. J. Appl. Phys. 131, 204502, https://doi.org/10.1063/5.0096094[5] Räcke P et al (2021) Vacancy diffusion and nitrogen-vacancy center formation near the diamond surface Appl.
Phys. Lett. 118, 204003, https://doi.org/10.1063/5.0046031