DISCRETE SEMICONDUCTORSDATA SHEET

M3D051BB910
VHF variable capacitance diodeProduct specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC011996 May 03

Philips Semiconductors

Product specification

VHF variable capacitance diode

BB910

FEATURES• Excellent linearity• Matched to 2.5%

handbook, halfpageka• Hermetically sealed leaded glass
SOD68 (DO-34) package
MAM234• C28: 2.5; ratio: 16• Low series resistance.

Cathode side indicated by a red band on a black body.
Additional green band.

APPLICATIONS

Fig.1 Simplified outline (SOD68; DO-34) and symbol.

• Electronic tuning in VHF television
tuners, band B up to 460 MHz• VCO.

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).

DESCRIPTIONSYMBOLThe BB910 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in thehermetically sealed leaded glass
SOD68 (DO-34) package.

VR

continuous reverse voltage

−30V

IF

continuous forward current−20mATstg

storage temperature−55+150°C

Tj

operating junction temperature−55+100°CMIN.

TYP.

MAX.

UNIT

VR = 28 V; see Fig.3−−10nA

VR = 28 V; Tj = 85 °C; see Fig.3−−200nA

PARAMETER

MIN.

MAX.

UNIT

ELECTRICAL CHARACTERISTICS
Tj= 25 °C; unless otherwise specified.
SYMBOLIR

PARAMETER
reverse current

CONDITIONS

rs

diode series resistancef = 100 MHz; note 1−−1ΩCd

diode capacitance

VR = 0.5 V; f = 1 MHz; see Figs 2 and 4

38−−pFVR = 28 V; f = 1 MHz; see Figs 2 and 42.3−2.7pF

C d ( 0.5V )---------------------C d ( 28V )capacitance ratio

f = 1 MHz

14−−

∆C d---------Cdcapacitance matching

VR = 0.5 to 28 V−−

2.5Note
1. VR is the value at which Cd = 40 pF.

1996 May 03

2%

Philips Semiconductors

Product specification

VHF variable capacitance diodeBB910

GRAPHICAL DATA
MBE87550

handbook, full pagewidthCd(pF)
40302010010 −1

11010 2VR (V)f = 1 MHz; Tj = 25 °C.

Fig.2 Diode capacitance as a function of reverse voltage; typical values.

MLC81610 3
handbook, halfpage

IR(nA)TC d(K−1)

102

10 4

10050oT j ( C)

MLC81510 3
handbook, halfpage

10 5
10 1

100

110VR (V)Tj = 0 to 85 °C.

Fig.4
Fig.3

Reverse current as a function of junction
temperature; maximum values.

1996 May 03

3Temperature coefficient of diodecapacitance as a function ofreverse voltage; typical values.

102Philips Semiconductors

Product specification

VHF variable capacitance diode

BB910

PACKAGE OUTLINE

(1)

(2)

0.55
max
1.6max25.4 min3.04max

25.4 min

MBC040Dimensions in mm.
(1) Cathode side indicated by a red band on a black body.
(2) Additional green band.

Fig.5 SOD68 (DO-34).

DEFINITIONS
Data sheet status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification

This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one ormore of the limiting values may cause permanent damage to the device. These are stress ratings only and operationof the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of theseproducts can reasonably be expected to result in personal injury. Philips customers using or selling these products foruse in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 May 03

4

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