Single P-channel MOSFET
ELM4P6115FDA-N

http://www.elm-tech.com■General description■Features

ELM4P6115FDA-N uses advanced trench technology
to provide excellent Rds(on), low gate charge and lowgate threshold voltage.

• Vds=-60V• Id=-35A (Vgs=-10V)• Rds(on)=25mΩ (Vgs=-10V)• Rds(on)=33mΩ (Vgs=-4.5V)■Maximum absolute ratings
Parameter

Symbol

Limit

Unit

Drain-source voltage

Vds-60V

Gate-source voltage

Vgs±20-35V

Tc=25°C

Continuous drain current(Vgs=-10V)

Id

Tc=100°C

NoteA1A

2

Pulsed drain current
Single pulse avalanche energy

Idm-27-70

Eas

113mJ

3

Avalanche current

IasPd47.6
52.1

AW4Tstg
Tj-55 to 150-55 to 150°C°C

Power dissipation

Tc=25°C

Storage temperature range
Operating junction temperature range■Thermal characteristics
Parameter
Thermal resistance junction-to-ambient

Symbol
Rθja

Typ.
-Max.
62.0

Unit°C/W

Note
1

Thermal resistance junction-to-case

Rθjc

-

2.4°C/W

1■Pin configuration■Circuit

TO-252(TOP VIEW)

DPin No.
1

Pin nameGATE

23DRAIN
SOURCE

GS

Rev.1.1
1/4

Single P-channel MOSFET
ELM4P6115FDA-N

http://www.elm-tech.com■Electrical characteristics
Parameter

SymbolCondition

Tj=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Vgs=0V, Id=-250μA

Zero gate voltage drain current

Idss

Vds=-48V, Vgs=0V
Vds=-48V, Vgs=0V, Tj=55°C-60--V---1-5

μAnA
V

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=-250μA-1.0-±100-2.5

Static drain-source on-resistanceRds(on)Vgs=-10V, Id=-18A--

25

Vgs=-4.5V, Id=-12A
Vds=-10V, Id=-18A

-

2333-

Is=-1A, Vgs=0V---1-35-70

VA
A

Vgs=0V, Vds=-15V, f=1MHz-3635
224-

pF
pF

Vds=0V, Vgs=0V, f=1MHz-

141
7-

pF
Ω-

25.0-

nC-

6.7
5.5

-

nC
nCmΩ

Forward transconductance

Gfs

Diode forward voltage
Continuous source current
Pulsed source current
DYNAMIC PARAMETERS

VsdIsIsm

Input capacitance
Output capacitance

Ciss
CossReverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (-4.5)

CrssRgGate-source charge
Gate-drain charge

Qgs
Qgd

Turn-on delay timetd(on)
tr
Vgs=-10V, Vds=-15V-

38.0
23.6-

ns
ns

td(off) Id=-1A, Rgen=3.3Ω
tf-

100.0
6.8-

nsns

Turn-on rise timeTurn-off delay timeTurn-off fall timeQg

Vgs=Vds=0V, Force current

Vgs=-4.5V, Vds=-20V
Id=-12A

2S21, 52, 5

NOTE :1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300μs and duty cycle ≤ 2%.
3. The Eas data shows Max. rating . The test condition is Vdd=-25V, Vgs=-10V, L=0.1mH, Ias=-47.6A.
4. The power dissipation is limited by 150°C junction temperature.
5. The data is theoretically the same as Id and Idm, in real applications, should be limited by total power dissipation.

Rev.1.1
2/4

FKD6115Single P-channel MOSFETFETek Technology Corp.

P-Ch 60V Fast Switching MOSFETs
ELM4P6115FDA-N

http://www.elm-tech.com

TypicalCharacteristics■Typicalelectricaland thermal characteristics
30

12ID=-12A
28

VGS=-10V

8RDSON (mΩ)-ID Drain Current (A)

10VGS=-7V

26

VGS=-5V

6

VGS=-4.5V

24

422

VGS=-3V

2020
00.25

0.50.75-VDS Drain-to-Source Voltage (V)124Fig.1 Typical Output Characteristics
10-VGS Gate to Source Voltage (V)-IS Source Current(A)108

TJ=150℃

TJ=25℃

4200.20.4

0.60.8-VSD , Source-to-Drain Voltage (V)

10VDS=-20V
ID=-12A

864

2001Fig.3 Forward Characteristics Of Reverse

2040

QG , Total Gate Charge (nC)

60Fig.4 Gate-Charge Characteristics
2.0Normalized On Resistance

1.5Normalized -VGS(th)8Fig.2 On-Resistance v.s Gate-Source

1266-VGS (V)

1.5

1

1.0

0.5

0.5

0-50

050

100

TJ ,Junction Temperature ( ℃)

-50150Fig.5 Normalized VGS(th) v.s TJ

050100

TJ , Junction Temperature (℃)

150

Fig.6 Normalized RDSON v.s TJ

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A

3Rev.1.1
3/4

FKD6115

Single P-channel MOSFET
FETek Technology Corp.

10000

P-Ch 60V Fast Switching MOSFETs
ELM4P6115FDA-N

http://www.elm-tech.com

100.00F=1.0MHz

100us

Capacitance (pF)

Ciss

10.00

1000

-ID (A)

10ms

1.00

Coss
100

1ms

Crss

100ms
DC

0.10

Tc=25oC
Single Pulse
0.01

1015

913

17-VDS Drain to Source Voltage(V)

210.1

25

1Fig.7 Capacitance

10-VDS (V)1001000

Fig.8 Safe Operating Area

Normalized Thermal Response (RθJC)

1DUTY=0.5
0.3
0.1
0.1

0.05
0.02

PDM

0.01

D = TON/T

SINGLE PULSE

0.01
0.00001

TON

0.0001TTJpeak = TC + PDM x RθJC
0.001

0.01

0.1

1t , Pulse Width (s)Fig.9 Normalized Maximum Transient Thermal Impedance

Fig.10 Switching Time Waveform

Fig.11 Unclamped Inductive Waveform

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A

4

Rev.1.1
4/4