2SD882
NPN medium power transistor
Features■

High current■

Low saturation voltage■

Complement to 2SB772

Applications■

Voltage regulation■

Relay driver■

Generic switch■

Audio power amplifier■

DC-DC converter

321

SOT-32(TO-126)

Figure 1.

Description

Internal schematic diagram

The device is a NPN transistor manufactured byusing planar technology resulting in rugged highperformance devices. The complementary PNP
type is 2SB772.

Table 1.

Device summary

Order code

Marking

Package

Packing

2SD882

D882

SOT-32

TubeOctober 2007

Rev 31/8
www.st.com8Absolute maximum ratings

12SD882

Absolute maximum ratings
Table 2.

Absolute maximum rating

SymbolParameter

UnitVCBO

Collector-base voltage (IE = 0)

60

VVCEO

Collector-emitter voltage (IB = 0)

30

V

VEBO

Collector-base voltage (IC = 0)

5V

IC

Collector current

3

A

ICM

Collector peak current (tP < 5ms)

6

A

IB

Base current

1

A

IBM

Base peak current (tP < 5ms)

2

A

PTOT

Total dissipation at Tc = 25°C

12.5

W

TSTG

Storage temperature-65 to 150°C

TJ

Max. operating junction temperature

150°C

ValueUnit10°C/W

Table 3.
SymbolThermal data
Parameter

RthJ-case Thermal resistance junction-case max

2/8Value2SD882

2

Electrical characteristics

Electrical characteristics(TCASE = 25°C; unless otherwise specified)
Table 4.
SymbolElectrical characteristics
Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off current(VBE = 0)

VCE = 60 V

10µA

ICEO

Collector cut-off current(IB = 0)

VCE = 30 V

100

µA

IEBO

Emitter cut-off current(IC = 0)VEB = 5 V

10µA

V(BR)CEO(1)Collector-emitter breakdown
voltage
IC = 10 mA(IB = 0 )30

V

Collector-base breakdown
V(BR)CBO voltage(IE = 0 )IC = 100 µA

60

VEmitter-base breakdown
V(BR)EBO voltage(IC = 0 )IE = 100 µA

5V

Collector-emitter saturation
voltage

IC = 1 A
IC = 2 A
IC = 3 A

IB = 50 mA
IB = 100 mA
IB = 150 mA

0.4
0.7
1.1

VV
V

(1)

Base-emitter saturation
voltage

IC = 2 A

IB = 100 mA

1.2VhFE

DC current gain

IC = 100 mA
IC = 1 A
IC = 3 A

VCE = 2 V
VCE = 2 V
VCE = 2 V

fTTransition frequency

IC = 0.1 A

VCE = 10 V

VCE(sat)(1)

VBE(sat)1008030300100MHz

1. Pulsed duration = 300 ms, duty cycle ≤1.5%.

3/8

Electrical characteristics

2SD882

2.1

Typical characteristics (curves)

Figure 2.

Reverse biased safe operating area Figure 3.

DC current gain

Figure 4.

Collector-emitter saturation voltage Figure 5.

Base-emitter saturation voltage

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2SD882

3

Package mechanical data

Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category ofsecond level interconnect is marked on the package and on the inner box label, incompliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

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Package mechanical data

2SD882

SOT-32 (TO-126) mechanical data
DIM.

mm.
MIN.

TYP

MAX.

A

2.4

2.9

B

0.64

0.88

B1

0.39

0.63

D

10.5

11.05

E

7.4

7.8

e2.04

2.29

2.54

e14.07

4.58

5.08

L

15.3

16

P

2.9

3.2

Q.8
3Q1

1H2I

1.52
2.15

7.2
10016114E

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2SD882

4

Revision history

Revision history
Table 5.

Document revision history

Date

RevisionChanges

09-Sep-2005

2

Final datasheet. New template02-Oct-2007

3

Updated mechanical data

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2SD882

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