# What brings diamond compared to wide bandgap materials in power semiconductor devices?

Nicolas C. Rouger

► To cite this version:

Nicolas C. Rouger. What brings diamond compared to wide bandgap materials in power semiconductor devices?. 33rd International Conference on Diamond and Carbon Materials, Elsevier, Sep 2023, Mallorca (Spain), Spain. hal-04221279

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https://hal.science/hal-04221279v1

Submitted on 28 Sep 2023

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Laplace

LABORATOIRE PLASMA ET
CONVERSION D'ÉNERGIE

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# What brings diamond compared to wide bandgap materials in power semiconductor devices?

## Session 4A: Diamond Power Devices I

*Invited speaker

Nicolas ROUGER, CNRS Research scientist

Nicolas.rouger@laplace.univ-tlse.fr

Sept 11th 2023

OK TO SHARE

ON SOCIAL MEDIA

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# Outline

## 1. Power semiconductor devices

A. Specificities and benchmarking

B. Impact of WBG power devices vs. Silicon

## 2. Diamond for power electronics

A. Unique properties of diamond

B. Benefits & benchmark of diamond

## 3. What's next?

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DCADE

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Clean Sky 2

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This project has received funding from the Clean Sky 2 Joint Undertaking (JU) under grant agreement No 101007868. The JU receives support from the European Union's Horizon 2020 research and innovation program and the Clean Sky 2 JU members other than the Union.

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# Power semiconductor devices

N. Rouger

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# Power electronics

## e.g. Half bridge / Buck Converter (DC/DC)

* Target 100 % efficiency

* Constraints on weight (volume), safety & reliability, cost, standards, adaptability to operating conditions, ...

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$$ 
\begin{aligned}
\eta &= P_{out}/P_{in} \\
&\approx 100\% \text{ (90-99\%)}
\end{aligned}
 $$

$$ P_{out} \approx P_{in} $$

avg. value controlled by duty cycle $α$
# Power semiconductor devices

## How to compare / Benchmark?

e.g. Si vs. SiC (WBG)

Same Von @ Ion

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Same conduction losses

Same Breakdown Voltage

Same Tj

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## What are the benefits of (U)WBG vs. Si?
# Power semiconductor devices

## How to compare / Benchmark?

e.g. Carrier Lifetime Control and optimal area

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Trade off and optimization!
Multiple variables
Part 2

# Diamond for power electronics

N. Rouger
# Benchmark: Diamond

## Critical Electric Field of Diamond?

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[A. Hiraiwa, H. Kawarada, 2013, JAP 114 034506]

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Laplace
Benchmark: Diamond

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[M. Couret et al, 2023, Diamond & Related Materials Vol 135, 109 827, 10.1016/j.diamond.2023.109827]

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Models for diamond limits:

1D Avalanche Breakdown & NPT

Inc. Ionization diamond
[B] Doped diamond

Drift region only
...
# Benchmark: Diamond vs. SiC

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[N Donato, N. Rouger et al 2020 J. Phys. D: Appl. Phys. 53 093001]

1D Avalanche Breakdown & NPT

Inc. Ionization diamond
[B] Doped diamond
Non linear Coss for Eon switching energy

Eoff=0
Vertical architecture

Drift region only
300K Ambient w/ natural convection
...

**Fair but still to be discussed**
# Benchmark: Diamond vs. SiC

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[N Donato, N. Rouger et al 2020 J. Phys. D: Appl. Phys. 53 093001]

**Other design:**

If $P_{Diam.} = P_{SiC}$ then
**f x5 => Passive Volume /3 to 5**
**HeatSink Volume -16% to -30%**

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[IEEE/Google Little Box challenge 2016]

Same output power

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(Losses / Area) x 10!
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# What's next?

N. Rouger
# Improved FOM Lateral D3MOSFET O-term

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DCADE

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Clean Sky 2

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Laplace

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DIAMFAB

SEMICONDUCTOR ENHANCED TECHNOLOGIES

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[D. Michez et al, SBDD XXVII 2023]

[M. Couret et al, 2023, Diamond & Related Materials Vol 135, 109 827, 10.1016/j.diamond.2023.109827]

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# Conclusion

## Benefits of Diamond e.g. vs. SiC

* 7 times smaller die, with 3 times less total losses

* 4 times smaller heatsink or 5 times higher switching frequency

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## Challenges

* Ecrit for lightly doped and thick diamond?

* How to reach highest 1D BV with actual 3D devices?

* Large area diamond devices with good FOM

* High quality & conductive substrate for vertical devices?

* Switching losses of diamond devices are unknown

* Power loss density P/S is expected to increase

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# Acknowledgements

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NÉEL
institut

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UGA
Univ. Grenoble Alpes

skylife

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DIAMFAB
DIAMOND ENHANCED TECHNOLOGIES

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SAINT

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EXUPÉRY

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Laplace

<figure><img src="image_65.png" /><figcaption>Dr. M. Couret Dr. A. Castelan Dr. D. Risaletto Dr. E. Sarraute</figcaption></figure>

DCADE

2021-2023

This project has received funding from the Clean Sky 2 Joint Undertaking (JU) under grant agreement No 101007868. The JU receives support from the European Union's Horizon 2020 research and innovation program and the Clean Sky 2 JU members other than the Union.

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Pr. F. Udrea</figcaption></figure>

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UNIVERSITY OF
CAMBRIDGE

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DIAMFAB
DIAMOND ENHANCED TECHNOLOGIES

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Laplace

LABORATOIRE PLASMA ET
CONVERSION D'ÉNERGIE

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# What brings diamond compared to wide bandgap materials in power semiconductor devices?

## Session 4A: Diamond Power Devices I

*Invited speaker

Nicolas ROUGER, CNRS Research scientist

Nicolas.rouger@laplace.univ-tlse.fr

Sept 11th 2023

OK TO SHARE

ON SOCIAL MEDIA

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cnrs