# ثبت المراجع

أَوَّلًا: الكُتَب: (مُرْتَبَةُ أَبْجَدِيَّ بِحَسَبِ الْعَنَوان)

بِاللُّغَةِ الإِنْكَلِيْزِيَّةِ:

[1] Godse A.P.; Bakshi, U.A. (2009). "Basic Electronics". Technical Publications. ISBN: 9788184317077.

[2] Segura; Jaume; F. Hawkins, Charles (2004). "*CMOS Electronics: How It Works, How It Fails*". John Wiley & Sons. ISBN: 0471476692.

[3] Boylestad, Robert; Nashelsky, Louis (1998). "*Electronic devices and circuit theory*".Seventh edition. Prentice Hall. ISBN: 013769282X.

[4] F. Bogart, Theodore; (1993). "*Electronic Devices and Circuits*". Macmillan Publishing Company. ISBN: 002311701X.

[5] Kumar, Balbir; Shail B., Jain (2007). "*Electronic Devices and Circuits*". PHI Learning Pvt. Ltd. ISBN: 9788120348448.

[6] Deshpande (2008). "*Electronic devices & Circuits Principles and applications*". Tata McGraw-Hill Education. ISBN: 0070617112.

[7] D. Chattopadhyay (2006). "*Electronics (Fundamentals and Applications)*". New Age International. ISBN: 8122417809.

[8] Sah, Chih-Tang (1991). "*Fundamentals of Solid-state Electronics*". First edition. World Scientific. ISBN: 9810206372.

[9] Jianjun Gao (2015). "*Heterojunction Bipolar Transistors for Circuit Design: Microwave Modeling and Parameter Extraction*". Third Edition. John Wiley & Son. ISBN: 9781118921524.

[10] Jaeger, Richard C.; Blalock, Travis N (2010). "*Microelectronic Circuit Design*". Fourth Edition. McGraw-Hill. ISBN: 978-0-07-338045-2.

[11] Chenming, Hu (2010). "*Modern Semiconductor Devices for Integrated Circuits*". Prentice Hall. ISBN: 0136085253.
[12] Childs, G.W. (2012). “Physical Constants: Selected for Students”. Springer Science & Business. ISBN: 9780412210501.

[13] Colinge, J.-P.; Colinge, C.A.(2005). “Physics of Semiconductor Devices”. Springer Science & Business Media. ISBN: 0387285237.

[14] U.A. Bakshi; A.P. Godse (2008). “Semiconductor Devices & Circuits”. Technical Publications. ISBN: 9788184312980.

[15] Yoo, Chue San (2008). “Semiconductor Manufacturing Technology”. World Scientific. ISBN: 9812568239.

[16] C M Kachhava (2003). “Solid State Physics, Solid State Device and Electronics”. New Age International. ISBN: 8122415008.

[17] Whitaker, Jerry C. (1996). “The Electronics Handbook”. CRC Press. ISBN: 0849383455.
باللغة الفرنسية:

[18] Tran Tien, Lang; (1996). “Circuits fondamentaux de l'électronique analogique”. 3e édition. Tec et Doc Lavoisier. ISBN: 2743000996.

[19] ENCINAS, Jean (1992). “Diodes et transistors bipolaires discrets”. Techniques de l'ingénieur. Réf: ME2465v1.

[20] Ngô, Christian; Ngô, Hélène (2012). “Physique des semi-conducteurs”. 4e édition. Dunod. ISBN: 9782100583430.

[21] Gréhant, Bernard (1990). “Physique des Semiconducteurs - Tome 1 : Cours: (Réédition numérique par l'auteur)”. ISBN 2212095422.

ثانياً: المقالات: (مرتبة تصاعدية بحسب سنة النشر)

[22] Miller, John M., “Dependence of the input impedance of a three-electrode vacuum tube upon the load in the plate circuit ”, Scientific Papers of the Bureau of Standards, vol.15, no. 351, pp. 367-385, 1920.

[23] Early; J. M., “Effects of Space-Charge Layer Widening in Junction Transistors”, in Proceedings of the IRE, vol. 40, no. 11, pp. 1401-1406, Nov. 1952. DOI: 10.1109/JRPROC.1952.273969.
[24] Webster; W. M., "On the Variation of Junction-Transistor Current-Amplification Factor with Emitter Current", in Proceedings of the IRE, vol. 42, no. 6, pp. 914-920, June 1954. DOI: 10.1109/JRPROC.1954.274751.

[25] Ebers, J. J. and Moll, J. L., "Large-Signal Behavior of Junction Transistors", in Proceedings of the IRE, vol. 42, no. 12, pp. 1761-1772, Dec. 1954. DOI: 10.1109/JRPROC.1954.274797.

[26] Sah C.; Noyce, R. N. and Shockley, W., "Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics", in Proceedings of the IRE, vol. 45, no. 9, pp. 1228-1243, Sept. 1957. DOI: 10.1109/JRPROC.1957.278528.

[27] Giacoletto, L. J., "Diode and transistor equivalent circuits for transient operation", in IEEE Journal of Solid-State Circuits, vol. 4, no. 2, pp. 80-83, April 1969. DOI: 10.1109/JSSC.1969.1049963.

[28] Gummel, H. K. and Poon, H. C., "An integral charge control model of bipolar transistors", in The Bell System Technical Journal, vol. 49, no. 5, pp. 827-852, May-June 1970. DOI: 10.1002/j.1538-7305.1970.tb01803.x.

[29] Kirk, C. T., "A theory of transistor cutoff frequency (fT) falloff at high current densities", in IRE Transactions on Electron Devices, vol. 9, no. 2, pp. 164-174, March 1962. DOI: 10.1109/T-ED.1962.14965.

[30] "IEEE Standard American National Standard Canadian Standard Graphic Symbols for Electrical and Electronics Diagrams (Including Reference Designation Letters)", in IEEE Std 315-1975 (Reaffirmed 1993), pp.i-244, 1993. DOI: 10.1109/IEEESTD.1993.93397.

ثالثاً: الأشكال والصور: (مرتبة بحسب ورودها ضمن فصول الكتاب)

<table><thead><tr><th>الرخصة(2*)</th><th>اسم المؤَلف</th><th>اسم الصورة الأصلي في ويكيميديا كومنز(1*)</th><th>الرقم</th></tr></thead><tbody><tr><td>CC<sup>(3)</sup> BY-SA 3.0</td><td>Glenn</td><td>Bipolar transistors Silicium based.jpg</td><td>1-1</td></tr><tr><td>(1) CC BY-SA 3.0</td><td>(1) Omegatron</td><td>(1) BJT NPN symbol.svg</td><td rowspan="2">2-1</td></tr><tr><td>(2) CC BY-SA 3.0</td><td>(2) Moberg</td><td>(2) BJT PNP sv symbol.svg</td></tr><tr><td>(1) PD<sup>(4)</sup></td><td>(1) AT&amp;T; photographer: Jack St.</td><td>(1) Bardeen Shockley Brattain 1948.JPG</td><td rowspan="2">3-1</td></tr><tr><td>(2) PD</td><td>(2) -</td><td>(2) Replica-of-first-transistor.jpg</td></tr><tr><td>(1) CC BY-SA 4.0</td><td>(1) MichelBakni</td><td>(1) Silicon Crystal structure.svg</td><td rowspan="2">1-2</td></tr><tr><td>(2) CC BY-SA 4.0</td><td>(2) MichelBakni</td><td>(2) Covalent bonding in silicon-ar.svg</td></tr><tr><td>(1) CC BY-SA 3.0</td><td>(1) Cyanos</td><td>(1) توزيع إلكتروني 014 سيليكون.svg</td><td rowspan="2">2-2</td></tr><tr><td>(2) CC BY-SA 3.0</td><td>(2) Cyanos</td><td>(2) توزيع إلكتروني 032 جرمانيوم.svg</td></tr></tbody></table>
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<footnote>(*) أو الصُّور الأُصْلِيَّة، لأَنَّ العديد مِن الصُّور في هذا الكتاب هي تَجْمِيع لصُورتين أو أكثر.</footnote>
<footnote>(2) بحسب ما وردت في صفحة الصورة على موقع ويكيميديا كومنز.</footnote>

<footnote>(3) CC: Creative Commons – مشاعٌ إبداعي.</footnote>

<footnote>(4) CC: PD: Public Domain – نطاق عام.</footnote>

<footnote>(5) عُدِّلت هذه الصورة لتوافق التموذج الخاص بترانزستور من التَّوع NPN.</footnote>
عن الكتاب

هذا الكتاب هو محاولة متناضعة لوصف القواعد الناظمة لعمل الترانسثور ننائي القطب ولشرح تطبيقاته، وهو موجة بالأساس إلى طلبة الهندسة الإلكترونية والكهرباء، ومصمم ليكون مرجعاً لمقرر أسس الهندسة الإلكترونية أو أي مقرر لاحق يرتكز عليه، وهو مكثف باللغة العربية الفصحي ومدعوم بأكثر من مئة صورة وشكل لمساعدة الطالب على فهم الفكرة واستيعاب المعلومة وبناء أساس نظري يكون القاعدة المتنية لتطبيقات عملية لاحقة.

<figure><img src="image_80.png" /></figure>