# Type-II Interband Cascade Laser Monolithically Integrated on Si Substrate

Maëva Fagot, Daniel Andrés Díaz-Thomas, Diba Ayache, Yves Rouillard, Aurore Vicet, Jean-Baptiste Rodriguez, Eric Tournié, Laurent Cerutti

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Maëva Fagot, Daniel Andrés Díaz-Thomas, Diba Ayache, Yves Rouillard, Aurore Vicet, et al. Type-II Interband Cascade Laser Monolithically Integrated on Si Substrate. Compound Semiconductor Week 2025, May 2025, Banff (Alberta), Canada. hal-05095424

HAL Id: hal-05095424

https://hal.science/hal-05095424v1

Submitted on 3 Jun 2025

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Distributed under a Creative Commons Attribution 4.0 International License
Type-II Interband Cascade Laser Monolithically Integrated on Si
Substrate

M. Fagot<fnref n="1" />, D.A. Díaz-Thomas<fnref n="1" />, D. Ayache<fnref n="1" />, Y. Rouillard<fnref n="1" />, A. Vicet<fnref n="1" />, J.-B. Rodriguez<fnref n="1" />, E. Tournié<fnref n="1" />,<fnref n="2" />,
and L. Cerutti<fnref n="1" />

1. IES, University of Montpellier, CNRS, F-34000 Montpellier, France

2. Institut Universitaire de France (IUF), F-75005 Paris, France

Corresponding author: laurent.cerutti@umontpellier.fr

***Abstract*** — We present recent advances in type-II interband cascade lasers (ICLs) emitting in the 3–5 µm range, grown on silicon substrates that show tolerance to threading dislocations. The demonstration of single-mode distributed feedback (DFB) ICLs on silicon highlights their potential for integrated optical sensors in silicon photonics platforms.

Keywords—III-V Laser on Silicon; Mid-Infrared; Interband Cascade Lasers;

Today, the interest in developing innovative photonic devices in the mid-infrared (mid-IR) wavelength range is growing rapidly due to the increasing demand for gas monitoring in industrial, medical, and defense applications, or for the development of free-space communications [1,2]. In addition, the integration of mid-IR lasers on Si enables their realisation on large and low-cost substrates with the ultimate goal of developing chip-scale photonic integrated circuits (PICs) [3]. Despite recent efforts to monolithically integrate III-V lasers on Si, several challenges remain due to the presence of various defects, such as the dislocations, which affect the performance and the lifetime of the lasers.

In this presentation, we will show that type-II interband cascade lasers (ICLs) are tolerant to mid-gap defect states induced by dislocations, thanks to the specific band diagram of their active region. Indeed, we have demonstrated ICLs emitting between 3.3 and 5 µm on mismatched substrates [4-6], with performance similar to those on native substrates. These ICLs exhibited long lifetime operation despite a high density of threading dislocations.
As single mode emission is required for laser spectroscopy, we will also present the development and the performance of a distributed feedback (DFB) technology on ICLs grown on Si [5].

All these results pave the way for the development of low-cost ICLs and are the first step towards the realization of optical gas sensors on Si PICs

This work was partially supported by the French program "Investments for the Future" (EquipEx EXTRA and HYBAT, ANR-11-EQPX0016, ANR-21-ESRE-0026), the French Occitanie Region (LASIDO project), the French Agency for Defense and Innovation (AID-DGA) and the BPI (HyQuality Project DOS0188007/00).

<footnote n="1">1. H. Wu et al, Sensors and Actuators B: Chemical, 297, 126753, 2019</footnote>

<footnote n="2">2. P. Didier et al, Photonics Research, 11, 582, 2023</footnote>

<footnote n="3">3. A. Remis et al, Light Science & applications, 12:150, 2023</footnote>

<footnote n="4">4. L. Cerutti et al, Optica, 8, 1398, 2021</footnote>

<footnote n="5">5. M. Fagot et al, Optics Express, 32, 11057, 2024</footnote>

<footnote n="6">6. M. Fagot et al., International Conference on Molecular Beam Epitaxy, FR-B1-05, 2024</footnote>

<footnote n="7">7. D.A. Díaz-Thomas et al, Applied Physics Letters, to be published</footnote>