# Growth and study of Sb-based Interband Cascade Laser on GaSb, GaAs and Si substrates

Maëva Fagot, Daniel Andrés Díaz-Thomas, Julie Goutorbe, Yves Rouillard, Jean-Baptiste Rodriguez, E Tournié, L Cerutti

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Maëva Fagot, Daniel Andrés Díaz-Thomas, Julie Goutorbe, Yves Rouillard, Jean-Baptiste Rodriguez, et al.. Growth and study of Sb-based Interband Cascade Laser on GaSb, GaAs and Si substrates. 6th International workshop on opportunities and challenges in mid-infrared laser-based gas sensing (mirs6ens), Jan 2026, Wurtzburg, Germany. hal-05454923

HAL Id: hal-05454923

https://hal.science/hal-05454923v1

Submitted on 27 Jan 2026

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# Growth and study of Sb-based Interband Cascade Laser on GaSb, GaAs and Si substrates

M. Fagot,¹, D. A. Diaz-Thomas,¹ J. Goutorbe,¹ Y. Rouillard,¹ J.-B. Rodriguez,¹ E. Tournié¹,² and L. Cerutti¹,*

¹IES, University of Montpellier, CNRS, F-34000 Montpellier, France

²Institut Universitaire de France (IUF), F-75005 Paris, France

Corresponding author: laurent.cerutti@umontpellier.fr

Type-II quantum well (QW) interband cascade lasers (ICLs) have emerged as the most efficient laser sources in the mid-infrared (MIR) spectral range, especially between 3 and 6 µm. However, their widespread adoption in commercial applications, such as trace gas detection and industrial process monitoring, is hindered by the use of small, expensive native substrates. A promising solution lies in the growth of ICLs on cost-effective, large-sized mismatched substrates like Si or GaAs. This approach could significantly reduce production costs while enabling the integration of high-performance MIR lasers and photonic sensors with silicon-based photonic integrated circuits (PICs).

We have successfully demonstrated the fabrication of ICLs emitting in the 3 - 5 µm range, grown on both GaAs and Si substrates. Despite the presence of high threading dislocation densities, all devices exhibited performance comparable to those grown on native substrates and showed long device lifetimes. These results suggest that the active region designs based on type-II QWs may possess an inherent tolerance to dislocations, an important advantage for developing low-cost ICLs and enabling the fabrication of optical gas sensors on Si PICs.

This work was partially funded by France 2030 program (EquipEx EXTRA (ANR-11-EQPX-0016), and HYBAT (ANR-21-ESRE-0026)), the French Occitanie Region (LASIDO project), the French Agency for Defense and Innovation (AID-DGA), the Banque Publique d'Investissement (Hyquality Project DOS0188007/00) and the Air Force Office of Scientific Research under award number FA8655-24-1-7038.