# Technological pathways in CVD diamond growth towards bioapplications

Milos Nesladek, M. Bonnauron, Christine Mer, Samuel Saada, Nicolas

Tranchant, E. van Hove, Philippe Bergonzo

► To cite this version:

Milos Nesladek, M. Bonnauron, Christine Mer, Samuel Saada, Nicolas Tranchant, et al. Technological pathways in CVD diamond growth towards bioapplications. ORCHID French-Taiwan Workshop 2008, Oct 2008, Taiwan, Taiwan. cea-05508684

HAL Id: cea-05508684

https://cea.hal.science/cea-05508684v1

Submitted on 13 Feb 2026

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# French talks

## Technological pathways in CVD diamond growth towards bioapplications

**M. Nesladek**<fnref n="1" />,<fnref n="2" />, M. Bonnauron<fnref n="1" />, C. Mer<fnref n="1" />, S. Saada<fnref n="1" />, N. Tranchant<fnref n="1" />, E. Van Hove<fnref n="1" /> and P. Bergonzo<fnref n="1" />

Recent interests in Chemical Vapor Deposited (CVD) diamond as a novel material for constructing biofunctional interfaces and interfacing to living cells brought important advances into the CVD diamond fabrication technology, allowing preparation of a wide variety of CVD diamond films. The interest in CVD diamond is based on its biocompatibility, combined with active semiconducting properties. The aim of this presentation is to give an overview over the current state of the art in the growth of two main kinds of CVD diamond films: single crystal (SC) epitaxial CVD diamond and nanocrystalline diamond (NCD) thin films. These two kinds of materials, though entirely different by their structure and material characteristics, have several important interconnecting properties, important for the use in the nanobioelectronics. Specifically it is imperative to prepare films with very flat surfaces, characterized by a low surface roughness on nm scale, which is necessary for reaching strong covalent bonding to biomolecules or for the cell growth. Second important requirement is to control the diamond electrical conduction by doping. A controlled incorporation of boron in CVD diamond leads to films ranging from semiconducting to metallic [1]. Doped diamond can be used as nanoelectrodes, working on ISFET principles for applications to DNA sensing or cell interfacing.

In this presentation we summarize the growth of single crystal diamond by epitaxy on (100) surfaces. We discuss the mechanism of growth of near-atomically flat diamond surfaces and related optical and electrical transport properties of the epitaxial layers. For nanocrystalline diamond films we focus on the issues of nucleation and growth of very thin diamond layers and discuss electrical and optical properties upon B-doping. Finally we will present briefly applications of CVD diamond to bio-electrochemistry and/or to neural cell interfacing for in-vivo implants.

## Contact and presenting author

**Milos NESLADEK**

**Current affiliation :**

French Atomic Energy Commissariat (CEA-LIST),
DRT/LIST/DETECS, Centre d'Etudes de Saclay

:91191 Gif-sur-Yvette

E-mail: milos.nesaldek@cea.fr

Telephone: +331-69-08-870

and University of Hasselt

IMO

B 3590 Diepenbeek

Belgium Tel: +3214268826, Fax: +3214268899

## Professional Experience

Professor or nanoelectronics at the University of Hasselt in Belgium (since 2004) and working on topic of CVD diamond at CEA-Saclay in France. He is graduated from the Faculty

<footnote n="1">¹CEA-LIST, Saclay, 91191 Gif-sur-Yvette, France</footnote>

<footnote n="2">²Hasselt University, Institute for Materials Research (IMO), Wetenschapspark 1, Diepenbeek, B-3590, Belgium</footnote>
of Mathematic and Physics at the Charles University in Prague, Czech Republic (1984) and obtained his PhD degree (1991) from the Institute of Physics, Czech Academy of Sciences, together with Catholic University in Leuven in Belgium on the electrical transport properties of amorphous and microcrystalline Si. He as one of the pioneers of the European CVD diamond research, working on this topic since its beginnings in 1989. He has been leading the CVD diamond group in Belgium, Hasselt University for the last 10 years, working mainly on CVD diamond epitaxy, n-type doping and defect spectroscopy. Since 2003 he is working as his main location at CEA Saclay on nanostructured diamond semiconducting materials and their application to bioelectronics. He is the coordinator of 6th Framework European Project "DREAMS". He is member of several research councils such as the UK Engineering and Physical Sciences Research Council EPSRC board and reviewer, reviewer for 6th Framework EU programmes in the Marie Currie actions and for several other funding agencies. Currently he is author of about 150 papers in referred Scientific Journals, over 250 conference presentations, with about 860 citations over the last 6 years. He is author or editor of several book chapters, member of several conference boards He is the guest editor of Physica Status Solidi in connection with the annual international meeting "Surface and Bulk Defects in CVD Diamond Films" which he has been organising annually for the last 12 years.

Selected papers

1. M. Nesladek, M. Vanecek and L.M. Stals in Diamond Thin Films, edited by J.I.B. Wilson and W. Kulisch, *Akademie Verlag*, p.283, (1996).

2. M. Nesladek, K. Meykens, L. Stals, M. Vanecek and J. Rosa "Origin of characteristic subgap optical absorption in CVD diamond films", *Physical Review B* **54**, *8*, p. 5552-5561 (1996).

3. M. Nesládek, K. Meykens, K. Haenen, L.M. Stals, T. Teraji, S. Koizumi, "Low-temperature spectroscopic study of n-type diamond", *Physical Review B*, *Brief Reports*, **59/23** (1999) 14852

4. K. Iakoubovskij, G.J. Adriaenssens, K. Meykens, M. Nesladek, A.V.Vul and V.Y. Osipov, Study of defects in CVD and ultradisperse diamond, *Diamond Related Materials*, **8**(1999), 1476-1479.

5. M. Nesladek, K. Haenen, M. Vanecek, "Optical properties of CVD diamond". In "Semiconductors and Semimetals, Vol. **76** - Thin Film Diamond, (2003) 325-377", Eds. C.E. Nebel & J. Ristein, Academic Press, ISBN 0-12-752185-2.

6. G. Bogdan, M. Nesládek, J. D'Haen, J. Maes, V. V. Moshchalkov, K. Haenen, M. D'Olieslaeger, "Growth and characterization of near-atomically flat, thick homoepitaxial CVD diamond films", *Physica status solidi* (a) **202/11** (2005) 2066-2072.

7. S. Wenmackers, P. Christiaens, W. Deferme, M. Daenen, K. Haenen, M. Nesládek, P. Wagner, V. Vermeeren, L. Michiels, M. vandeVen, M. Ameloot, J. Wouters, L. Naelaerts, Z. Mekhalif, "Head-on immobilization of DNA fragments on CVD-diamond layers", *Materials Science Forum* **492-493** (2005), 267-272.

8. P. Christiaens, V. Vermeeren, S. Wenmackers, M. Daenen, K. Haenen, M. Nesládek, M. vandeVen, M. Ameloot, L. Michiels, P. Wagner, "EDC-mediated DNA attachment to nanocrystalline CVD diamond films", *Biosensors & Bioelectronics*, **2006**

9. J. J. Mares, P. Hubík, J. Kritofik, D. Kindl, M. Fanta, M. Nesládek, O. Williams, and D. M. Gruen, Weak localization in ultrananocrystalline diamond, *Appl. Phys. Lett.* **88**, 092107 (2006)

10. M. Nesladek, D. Tromson, P. Bergonzo, J. J. Mares, P. Hubík, J. Kristofik, Superconductivity and Raman spectra in B-doped nanocrystalline films, *Appl. Phys. Lett.*, **88**, 1_2006.