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# Efficiency and Cost Comparison of GaN/Si and SiC/Si Hybrid ANPC Three-phase Inverter

Manex Gondat, Asier Garcia-Bediaga, Ander Avila, Alejandro Rujas

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Manex Gondat, Asier Garcia-Bediaga, Ander Avila, Alejandro Rujas. Efficiency and Cost Comparison of GaN/Si and SiC/Si Hybrid ANPC Three-phase Inverter. The 26th European Conference on Power Electronics and Applications, GDR SEEDS France & EPE Association, Mar 2025, Paris, France. 10.34746/epe2025-0171. hal-05107609

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# Efficiency and Cost Comparison of GaN/Si and SiC/Si Hybrid ANPC Three-phase Inverter

Manex Gondat<sup>●</sup>, Asier Garcia-Bediaga<sup>●</sup>, Ander Avila<sup>●</sup>, Alejandro Rujas<sup>●</sup>

Ikerlan Technology Research Center, BRTA / Arrasate-Mondragón, Spain

Tel.: +34/943712400

E-Mail: mgondat@ikerlan.es

URL: https://www.ikerlan.es

## ACKNOWLEDGMENTS

The ALL2GaN Project (Grant Agreement No 101111890) is supported by the Chips Joint Undertaking and its members including the top-up funding by Austria, Belgium, Czech Republic, Denmark, Germany, Greece, Netherlands, Norway, Slovakia, Spain, Sweden and Switzerland. Funded by the European Union. Views and opinions expressed are however those of the author(s) only and do not necessarily reflect those of the European Union, Chips JU or the national granting authorities. Neither the European Union nor the granting authorities can be held responsible for them.

*Index Terms*—Multi-level inverters, Hybrid, Wide bandgap, Silicon Carbide (SiC), Gallium Nitride (GaN), ANPC, High voltage power converters, Electric Vehicle (EV).

*Abstract*—This paper evaluates the benefits of a hybrid Active Neutral Point Clamped (ANPC) topology that combines Wide Band Gap (WBG) materials, Gallium Nitride (GaN) or Silicon Carbide (SiC), with Silicon (Si) technologies. The proposed topology enables the integration of GaN semiconductors, typically rated up to 650 V, into 800 V bus applications—an input voltage that the automotive market tends to reach. Using hybridization of semiconductor technologies, the system achieves substantial cost reduction without compromising efficiency. The concept is experimentally validated using a 15 kW three-phase prototype.

## I. INTRODUCTION

Wide Band Gap (WBG) semiconductors enable achieving high efficiency and power density in convert-

ers. However, the high voltage transients during switching increase the generated electro-magnetic interferences (EMI), requiring bulky filters that reduce power density. This issue is expected to worsen in future converters due to the trend of raising the bus voltage to 800 V [1]. Considering this, new voltage source inverter (VSI) topologies have been proposed in the literature to replace the 2-level (2L) converter, which has been widely used due to its simplicity [2]. Among the proposed solutions, multilevel converters with more than two levels show great potential for future converters, as they effectively reduce the high $dv/dt$ [3], while also enhancing the harmonic content of the output waveform, reducing the size of the output filter. Furthermore, in multilevel converters, the switches have to block half of the DC voltage, which enables the use of lower voltage-rated semiconductors, which ensure superior performance [4]. This characteristic also makes it feasible the usage of current Gallium Nitride (GaN) semiconductors, which typically have a maximum blocking voltage of 650 V, in applications with 800 V bus voltage.

Figure 1 presents the most well-known three-level converters. The Neutral Point Clamped (NPC) converter, shown in Fig. 1a, is the simplest topology of the three, but it lacks redundancy. The Flying Capacitor (FC) converter, shown in Fig. 1b, provides redundancy, but requires a more complex control scheme to maintain the flying capacitors at half the bus voltage. The Active Neutral Point Clamped (ANPC) converter, shown in Fig. 1c, builds upon the NPC topology by replacing the power diodes with switches, resulting in greater control
<figure><img src="image_3.png" /><figcaption>Fig. 1. Electric diagram of the best well known 3L topologies: a) NPC, b) FC and c) ANPC</figcaption></figure>

flexibility and improved efficiency. This paper proposes a hybrid Active Neutral Point Clamped (ANPC) structure, Fig. 1c. This topology has been selected due to conserving the NPC's design simplicity in addition to overcome its lack of redundancy, Table I. This additional degree of freedom allows the topology to optimize different aspects, such as switching the short switching loop or switching certain semiconductors at a lower frequency, a necessary feature for efficient hybridization.

<table><caption>TABLE I
SWITCHING STATES OF THE ANPC TOPOLOGY</caption><thead><tr><th><i>v</i><sub>A0</sub> [V]</th><th><i>S</i><sub>1</sub></th><th><i>S</i><sub>2</sub></th><th><i>S</i><sub>3</sub></th><th><i>S</i><sub>4</sub></th><th><i>S</i><sub>5</sub></th><th><i>S</i><sub>6</sub></th></tr></thead><tbody><tr><td><i>-V</i><sub>bus</sub>/2</td><td>1</td><td>1</td><td>0</td><td>0</td><td>0</td><td>1</td></tr><tr><td><i>0</i><sub>1</sub><sup>+</sup></td><td>1</td><td>0</td><td>1</td><td>0</td><td>0</td><td>1</td></tr><tr><td><i>0</i><sub>2</sub><sup>+</sup></td><td>0</td><td>1</td><td>0</td><td>0</td><td>1</td><td>0</td></tr><tr><td>0</td><td>0</td><td>1</td><td>1</td><td>0</td><td>1</td><td>1</td></tr><tr><td><i>0</i><sub>1</sub><sup>-</sup></td><td>0</td><td>1</td><td>0</td><td>1</td><td>1</td><td>0</td></tr><tr><td><i>0</i><sub>2</sub><sup>-</sup></td><td>0</td><td>0</td><td>1</td><td>0</td><td>0</td><td>1</td></tr><tr><td><i>-V</i><sub>bus</sub>/2</td><td>0</td><td>0</td><td>1</td><td>1</td><td>1</td><td>0</td></tr></tbody></table>

However, multilevel converters also involve a higher number of switches. This, combined with the high price of WBG semiconductors compared to typical silicon devices, the total cost of the converter significantly increases. Therefore, if the beneficial features of WBG devices are aimed, a substantial economic investment is necessary. In this context, the hybridization of semiconductors becomes an attractive approach, as it enables the combination of different semiconductors types, optimizing the overall cost-performance ratio. This work extends the theoretical analysis of hybridization with SiC devices presented in [5] and [6] to include GaN switches. The results presented in this work not only demonstrate the enhanced efficiency of WBG-based solutions but also

establish their viability as a significantly more cost-effective alternative to full WBG multilevel converters. These findings offer a fresh perspective on the potential of hybrid converter designs for industrial applications. To validate the concept of hybridization, a three-phase 3-level ANPC converter has been constructed.

## II. ANPC MODULATION STRATEGIES

This section introduces a modulation commonly employed in ANPC systems, along with the modulations investigated in this document for hybridization.

### A. ANPCs Typical Modulation Strategy

The Phase-Shifted PWM (PS-PWM) shown in Fig. 2 is commonly used in ANPC converters. In this modulation, both carriers operate at the same frequency but are 180° phase shifted. Thus, all switches have the same switching frequency, doubling the apparent frequency of the converter. While the total switching losses respect the converter's apparent switching frequency are not lower than in other modulation techniques, the switching losses are more evenly distributed across the switches. However, as all devices should be switched at high frequency, this modulation technique is not suitable for an efficient hybridization.

### B. Analyzed Modulation Techniques for Hybridization

In the proposed modulation techniques for hybridization, the high switching frequency is focused on specific devices, fixing the switching losses on these components, while the rest of switches commute at low frequency (output frequency), having practically no switching losses. Thus, the main idea of hybridization is to use WBG semiconductors, with remarkable switching capabilities in the switching semiconductors, while using more economical semiconductors, but with a lower
<figure><img src="image_4.png" /><figcaption>Fig. 2. Simulation waveforms of the PS-PWM modulation technique.</figcaption></figure>

<figure><img src="image_5.png" /><figcaption>Fig. 3. Electric diagram of analyzed hybrid ANPC converters: PWM 1 (left) and PWM 2 (right). The IGBT symbols represent the low-frequency switching semiconductors, while the other symbols indicates the high-frequency ones.</figcaption></figure>

<figure><img src="image_6.png" /><figcaption>Fig. 4. Simulation waveforms of the PWM 1 modulation technique.</figcaption></figure>

<figure><img src="image_7.png" /><figcaption>Fig. 5. Simulation waveforms of the PWM 2 modulation technique.</figcaption></figure>

switching capability such as Si IGBTs, for the rest of the devices (see Fig. 3).

PWM 1: This modulation technique used in [7], is a variant of the NPC's IPD-PWM Modulation. Under this modulation scheme, the external devices ($S_1, S_4, S_5, S_6$) operate at half the frequency of the carrier frequency (fsw/2), similar to the IPD-PWM modulation, Fig. 4. Meanwhile, the internal devices ($S_2, S_3$) switch at the modulation signal (fout). Thus, an efficient hybrid topology would be composed of WBG semiconductors in the outside and 2 silicon devices in the center, Fig. 3 (left).

PWM 2: This technique explained in [6], focuses the converter's switching actions on two semiconductors, specifically in the central switches ($S_2, S_3$), allowing the remaining semiconductors to operate at the output frequency, Fig. 5, achieving the semiconductor disposition shown in Fig. 3 (right).

### III. HYBRIDATION ANALYSIS

To compare the performance of the different hybrid configurations and modulation techniques, the following semiconductors have been evaluated:

* GaN FET TP65H015G5WS (GaN Device)

* SiC MOSFET C3M0015065K (SiC Device)

* Si IGBT IKW30N65EL5 (Si Device)

To select the semiconductors, a preliminary study of TO-247 devices was conducted, and those with the lowest conduction losses on the market were chosen. The selected FETs have a typical drain-to-source resistance of 15 mΩ. In the case of the IGBT, in addition to selecting a low $V_{ce(sat)}$ semiconductor, cost was also considered. The choice of the package was made because a single converter with footprints for TO-247 semiconductors was built to compare the different technologies. The main specifications of the devices are shown in Table II.
<table><caption>TABLE II
MAIN CHARACTERISTICS OF THE ANALYZED SEMICONDUCTORS</caption><thead><tr><th rowspan="2">Parameter</th><th rowspan="2">Unit</th><th colspan="3">Devices</th></tr><tr><th>GaN</th><th>SiC</th><th>Si</th></tr></thead><tbody><tr><td>V<sub>ds</sub></td><td>[V]</td><td>650</td><td>650</td><td>650</td></tr><tr><td>I<sub>d(100°C)</sub></td><td>[A]</td><td>59</td><td>96</td><td>21</td></tr><tr><td>R<sub>dsmax</sub></td><td>[mΩ]</td><td>18</td><td>21</td><td>-</td></tr><tr><td>V<sub>ce,0</sub></td><td>[V]</td><td>-</td><td>-</td><td>1.05</td></tr><tr><td>Q<sub>loss</sub></td><td>[nC]</td><td>430</td><td>214</td><td>-</td></tr><tr><td>R<sub>th</sub></td><td>[°C]/W</td><td>0,47</td><td>0,35</td><td>0,66</td></tr><tr><td>T<sub>j,max</sub></td><td>[°C]</td><td>150</td><td>175</td><td>175</td></tr></tbody></table>

## A. Modulation Analysis

To observe the loss distribution of each modulation, one phase of the converter is analyzed under two distinct scenarios: first, operating as an inverter (with a power factor (P.F.) of 1) and second, functioning as a rectifier (P.F.= -1). The working state parameters were set to $P_{out}=5$ kW, $f_{sw,inv}=40$ kHz (apparent frequency) and $f_o=200$ Hz. Each scenario has been simulated for a phase composed of semiconductors with the same technology (Full GaN, Full SiC and Full Si).

1) PWM 1 Loss Distribution: The modulation loss distributions of PWM 1 for different P.F. are depicted in Fig. 6.

Only the loss distribution of three switches is shown, as the remaining ones have equal losses (PS1=PS4,

PS2=PS3, PS5=PS6).

As expected, the IGBT based converter has the highest losses, due to its significant commutation energy losses. On the other hand, both SiC and GaN devices appear to have similar power losses. Otherwise, it can be clearly seen that with PWM 1 modulation strategy, the switching losses are concentrated in the exterior switches and their distribution depends on the power factor.

2) PWM 2 Loss Distribution: In this modulation, only the middle switches commute at high switching frequency. Consequently, the switching losses are expected to be concentrated in these two devices. This observation is confirmed by Fig. 7, where the switching losses are centered around the inside switches ($S_2$ and $S_3$), regardless of the power factor. The total power losses match those of PWM 1. However, in this case, the center semiconductors, in addition to having the total switching losses, also exhibit high conduction losses, resulting in greater thermal stress compared to PWM 1.

## B. Power Loss Comparison

After examining the loss distribution based on modulation, the hybrid converter's efficiency is analyzed.

The WBG devices have been selected to switch at high frequency, whereas the silicon IGBT has been selected for low switching frequency.

The working state parameters for this analysis were set to $f_{sw,inv}=40$ kHz, $T_j=100°C$, $V_{bus}=800$ V, $m_i=1$, and $f_o=50$ Hz.

<figure><img src="image_8.png" /><figcaption>Fig. 6. Simulation power loss distribution of PWM 1: P.F.= -1 (left) and P.F.= 1 (right).</figcaption></figure>

<figure><img src="image_9.png" /><figcaption>Fig. 7. Simulation power loss distribution of PWM 2: P.F.= -1 (left) and P.F.= 1 (right).</figcaption></figure>
<figure><img src="image_10.png" /><figcaption>Fig. 8. Simulation of one-phase total power losses in a traditional non-hybrid ANPC for different output power values.</figcaption></figure>

Fig. 8 shows the corresponding total power losses for not hybrid ANPCs. In which the IGBT made converter has almost double losses compared to WBG based ones, due to its higher switching losses.

From Fig. 9, it can be observed that the power losses of both hybrid topologies are nearly identical despite the differing number of WBG semiconductors. With both hybrid strategies, the total power losses are halved compared to a full-silicon converter, increasing the total efficiency by 1.1%. However, hybrid converters have higher power losses than topologies composed only of WBG devices, with losses being 33,6% higher at 5 kW. This difference arises from the higher conduction losses of IGBTs at low power levels, due to the $V_{ce,0}$ of these devices. Nevertheless, as output power increases, this difference is minimized, as IGBTs usually have lower conduction losses than MOSFETs at high currents. Therefore, although the inclusion of Si semiconductors may reduce efficiency at low power levels, Fig. 10, hybridization effectively takes advantage of the large switching capabilities of WBGs, achieving a high efficiency converter with efficiencies greater than 99.2% at 5 kW for GaN based converters and 99.4% for SiC.

### C. Hybrid Topologies' Cost Comparison

The Table III shows the total cost of an ANPC branch at current market prices. As expected, the full-WBG branches are the most expensive topologies with a total price of one hundred and eighty euros for the full-GaN converter and two hundred and forty-three euros and thirty-six cents for the SiC one. This final cost is significantly reduced by hybridization in both cases, reducing the total cost of the converter in almost 40% with PWM 1 and by 60% with PWM2.

## IV. EXPERIMENTAL PROTOTYPE AND VALIDATION

The built and validated scaled down ANPC inverter's specifications are shown in Table IV. This converter,

<figure><img src="image_11.png" /><figcaption>Fig. 9. Simulation of one-phase total power losses in a hybrid ANPC for different output power values.</figcaption></figure>

<figure><img src="image_12.png" /><figcaption>Fig. 10. Calculated inverter efficiency of hybrid ANPC configurations for different output power values.</figcaption></figure>

<table><caption>TABLE III
COST COMPARISON OF DIFFERENT ANPC CONFIGURATIONS</caption><thead><tr><th rowspan="2">Configuration</th><th colspan="4">Price [€]</th><th rowspan="2">Normalized</th></tr><tr><th>S<sub>1</sub></th><th>S<sub>4</sub></th><th>S<sub>2</sub></th><th>S<sub>5</sub></th><th>S<sub>6</sub></th><th>Tot. cost</th></tr></thead><tbody><tr><td>Full GaN</td><td>60</td><td>60</td><td>60</td><td>60</td><td>180</td><td>100%</td></tr><tr><td>PWM1-GaN</td><td>60</td><td>60</td><td>60</td><td>60</td><td>129,3</td><td>71,8%</td></tr><tr><td>PWM2-GaN</td><td>9,3</td><td>60</td><td>9,3</td><td>9,3</td><td>78,7</td><td>43,7%</td></tr><tr><td>Full-SiC</td><td>81,1</td><td>81,1</td><td>81,1</td><td>81,1</td><td>243,4</td><td>100%</td></tr><tr><td>PWM1-SiC</td><td>81,1</td><td>81,1</td><td>81,1</td><td>81,1</td><td>171,6</td><td>70,5%</td></tr><tr><td>PWM2-SiC</td><td>9,3</td><td>81,1</td><td>9,3</td><td>9,3</td><td>99,8</td><td>41,0%</td></tr></tbody></table>

<table><thead><tr><th>Semiconductor</th><th>Price [€]</th></tr></thead><tbody><tr><td>GaN FET TP65H015G5WS</td><td>30 €/unit</td></tr><tr><td>SiC MOSFET C3M0015065K</td><td>40,61 €/unit</td></tr><tr><td>Si IGBT IKW30N65EL5</td><td>4,66 €/unit</td></tr></tbody></table>

<footnote>* Prices have been taken from [8].</footnote>
<figure><img src="image_13.png" /><figcaption>Fig. 11. Built three-phase modular ANPC converter.</figcaption></figure>

Fig. 11, has been designed to be able to implement different semiconductor technologies and configurations (full GaN, GaN+Si, full SiC, etc.), which allows a fair comparison between technologies and the proposed hybridizations as the layout and driver circuitry remain the same. To achieve this, various TO-247 encapsulated semiconductor path variants have been included in the power stage (V-D-S, V-S-D or V-D-S-S), achieving different possible converter configurations. In addition, a driver capable of controlling the different technologies has been designed, as it was presented in [9].

<table><caption>TABLE IV
MAIN SPECIFICATIONS OF THE BUILT CONVERTER</caption><thead><tr><td>Parameter</td><td>Unit</td><td>Value</td></tr></thead><tbody><tr><td>V<sub>bus</sub></td><td>[V]</td><td>800</td></tr><tr><td>P<sub>out</sub></td><td>[kW]</td><td>15</td></tr><tr><td>P.F.</td><td></td><td>0,8-0,98</td></tr><tr><td>P<sub>out</sub></td><td>[Hz]</td><td>200-1000</td></tr><tr><td>P<sub>sw</sub></td><td>[kHz]</td><td>20-40</td></tr></tbody></table>

The drain-to-source voltage waveforms of PWM 1 and PWM 2 modulations used are shown in Fig. 12 and 13, in which the switching frequency was set at 500 Hz to show the modulation differences for a full-output voltage period.

To analyze the losses of both configurations, the Yokogawa WT1800E power meter was employed, measuring one phase of the inverter. The experimental results for the full-SiC and hybrid configurations are shown in figures 14 and 15. The results of Fig. 14 confirm the trend observed through simulation, where the SiC/Si hybrid configuration has higher power losses compared to the full SiC converter. However, this difference is less than 40%, specifically 39.3% higher at 5 kVA output.

<figure><img src="image_14.png" /><figcaption>Fig. 12. Experimentally measured Vds waveforms of the different SiC MOSFETs, PWM 1.</figcaption></figure>

<figure><img src="image_15.png" /><figcaption>Fig. 13. Experimentally measured Vds waveforms of the different SiC MOSFETs, PWM 2.</figcaption></figure>

Thus, the efficiency achieved with the hybrid topology is over 98.8%, as shown in Fig. 15, which is a considerable efficiency given that most of the devices used are silicon IGBTs.

On the other hand, the experimentally obtained efficiency, compared to the simulated results of the full-silicon converter, is remarkable; at an output apparent power of 5 kVA, the efficiency increases by 0.8%. This demonstrates that the overall efficiency of the converter can be improved by replacing two of the six devices with wide bandgap (WBG) semiconductors.

V. CONCLUSION

This paper proposes the use of an ANPC topology to enable the integration of 650 V semiconductors in 800 V buses, while also enabling the hybridization of
<figure><img src="image_16.png" /><figcaption>Fig. 14. Experimental total power losses respect to the output apparent power per phase.</figcaption></figure>

<figure><img src="image_17.png" /><figcaption>Fig. 15. Experimentally measured inverter efficiency respect to the output apparent power per phase.</figcaption></figure>

the converter. The benefits of hybridizing wide bandgap semiconductors—GaN and SiC—with more economical materials like silicon have been demonstrated analytically. The results show that it is possible to achieve a converter with many of the characteristics of WBG devices, even when the majority of the switches are silicon-based. In this manner, a considerable efficiency improvement can be achieved compared to a silicon-based converter (> 1%), resulting in an efficiency closer to that of a WBG semiconductor-based converter but with a 60% lower economic investment. Finally, the concept of hybridization is validated through a built 15 kW three-phase ANPC prototype.

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