# Electrical Characterization of Modular 3D Packaging Assembled with Compressed Metal Foams

Paul Bruyere, Alexis Derbey, Betina Zynger-Capaverde, Yvan Avenas, Eric

Vagnon, Jean-Luc Schanen, Jean-Michel Guichon, Omar Sanjakdar

► To cite this version:

Paul Bruyere, Alexis Derbey, Betina Zynger-Capaverde, Yvan Avenas, Eric Vagnon, et al. Electrical Characterization of Modular 3D Packaging Assembled with Compressed Metal Foams. 40th IEEE Applied Power Electronics Conference and Exposition (APEC 2025), Mar 2025, Atlanta, GA, United States. pp.2562-2568, 10.1109/APEC48143.2025.10977264 . hal-05057083

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Submitted on 6 May 2025

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# Electrical Characterization of Modular 3D Packaging Assembled with Compressed Metal Foams

Paul Bruyere¹,², Alexis Derbey¹, Betina Zynger-Capaverde¹, Yvan Avenas¹, Eric Vagnon², Jean-Luc Schanen¹, Jean-Michel Guichon¹, Omar Sanjakdar³

¹Univ. Grenoble Alpes, CNRS, Grenoble INP, G2Elab, Grenoble, France

²Ecole Centrale de Lyon, INSA Lyon, Universite Claude Bernard Lyon 1, CNRS, Ampère, UMR5005, 69130 Ecully, France

³Univ. Grenoble Alpes, CEA, LITEN, INES, 73375 Le Bourget du Lac, France

***Abstract***—This paper proposes a novel modular packaging concept based on the 3D integration of 1.2kV SiC MOSFET with metal foams for electrical contacts with pressure assembly. These foams could allow improving the disassembly of switching cells by keeping low electrical resistance and inductance inside the package. Thus, static and dynamic experimental characterizations are carried out to evaluate their impact compared to a massive interconnection represented by copper interposers. Static measurements show that the electrical resistance of the package is 2.3mΩ which represents 7% of the total resistance. Dynamic characterizations demonstrate that the stray inductance of the switching cell is equal to 2.7nH. With results of the massive interconnection close to the ones of foams, the material used for the electrical interconnection have no impact on the electrical performances of the power module. The modification of pressure assembly of the power module shows however a global increase of the packaging resistance and stray inductance of the power module for both solutions. This increase is more important for the massive interconnection due to the non-deformable mechanicals properties.

***Keywords***—Packaging, SiC devices, Modularity, Metal Foam

## I. INTRODUCTION

One solution massively used in nowadays converters lies on Wide Band-Gap (WBG) semiconductors use [1] in replacement of classical Silicon (Si) material. The better intrinsic properties of WBG materials allow to enhance electrical and thermal characteristics of converters, but their implementation is very sensitive to parasitic elements, e.g. stray inductances and capacitances. The literature proposes some solutions to this issue. For instance, Huang et al. [2] and Morand et al. [3] present 1.2kV Silicon Carbide (SiC) power modules based on respectively Direct Bonded Copper (DBC) substrates and Printed Circuit Board (PCB) technology. The stray inductances of these very performant power modules range from 0.4nH to 2nH.

Despite their interesting electrical properties, these types of power modules, also known as Multi-Chip Modules (MCM), do not support modularity or disassembly criteria due to the strong integration of components and materials inside the packaging. Furthermore, their design being linked to a specific case (current rating, topology...), it is necessary to redesign the power module to meet a new set of specifications.

Another classical solution based on Single-Chip Modules (SCM) benefits much more from modularity aspects. Indeed, these discrete packages, e.g. TO-247, allow to select the most

interesting reference in regard to the application and to design the converter around several components to satisfy the specifications. This solution shows however worse electrical (parasitics, insulation) and thermal behaviors [4] than MCM. Also, their mechanical assembly being most of the time made with solders, their disassembly is possible but remains complicated.

A new type of integration is therefore proposed in this paper. Based on the SCM concept, one 1.2kV SiC MOSFET die is integrated in a prepackage allowing easy disassembly and with electrical and thermal behaviors close to the ones of MCM. In the following section, a switching cell assembly is described: the design of this new assembly entails to consider electrical, thermal and mechanical aspects in order to support modularity and disassembly criteria. Then, the developed assembly is electrically characterized in order to quantify and compare its electrical properties to literature integration concepts [2][3]. This paper focuses on the electrical characterization, thermal management issues will not be addressed.

## II. MODULAR 3D PACKAGING CONCEPT PRESENTATION

### A. Prepackage description

The concept developed in this paper is based on the integration of a 1.2kV - 134A - 17mΩ SiC baredie in a single prepackage. A synoptic pattern of this latter is represented in Fig. 1. The SiC baredie from *Wolfspeed* (ref. EP3M-1200-0017D1-R01) is firstly assembled between two Aluminum Nitride (AlN) DBC substrates which allow mechanical support of the die and double-side insulation and cooling. The first DBC is the simplest one with Drain potential connection, while the second one is patterned to report the others potentials, i.e. Gate, Source and Kelvin Source, thanks to copper bumps.

A simple power electronic structure, i.e. a switching cell, is obtained thanks to the assembly of diverse prepackages. The mechanical assembly of these prepackages is simplified by transferring the die potentials onto a larger area represented by a PCB. For that, a PCB with cavity (approximately baredie area) is inserted between both DBC and SAC305 solder paste is used to insure mechanical assembly of all the DBC and PCB substrates. Finally, to avoid any possible voltage withstand issues due to the proximity of the die terminals, a dielectric gel is injected in the cavity between both DBC. All materials of the different layers and associated thicknesses are depicted in Table 1.
<figure><img src="image_2.png" /><figcaption>Fig. 1: Synoptic pattern of the developed prepackage.</figcaption></figure>

<table><caption>Table 1: Different layers used for the prepackage assembly with associated materials and thicknesses.</caption><thead><tr><th>Layer</th><th>Material</th><th>Thickness</th></tr></thead><tbody><tr><td>DBC<br>metallization</td><td>Cu</td><td>300µm</td></tr><tr><td>Substrate</td><td>AlN</td><td>1mm</td></tr><tr><td>Solder</td><td>SAC305</td><td>not fixed</td></tr><tr><td>Bump</td><td>Cu</td><td>1mm</td></tr><tr><td>Baredie</td><td>SiC</td><td>183µm</td></tr><tr><td>PCB<br>metallization</td><td>NiAu</td><td>35µm</td></tr><tr><td>PCB</td><td>FR4</td><td>1.53mm</td></tr></tbody></table>

The final assembly of the developed prepackage is depicted in Fig. 2. With geometrical dimensions of 54x26x4.8mm, the baredie area (25mm²) represents only 1.8% of the total prepackage surface. This ratio can be explained by the transfer of die potentials from DBC to PCB in order to simplify the switching cell assembly developed in the next subsection.

<figure><img src="image_3.png" /><figcaption>Fig. 2: Final assembly of the developed prepackage.</figcaption></figure>

## B. Power module description

An elementary switching cell built with two prepackages is described in Fig. 4. The classical phase-leg connection of both

prepackages are made by two different PCB named as motherboards. Electrical contacts between the prepackages and the PCB motherboards are made through Electrical Interface Materials (EIM). These are made of compressible copper foams [5] with high porosity rate (>85%). By analogy with Thermal Interface Materials (TIM), the foam allows absorbing the possible thicknesses mismatch in the power module assembly and thus improving the current repartition in the structure. In this example, the switching cell assembly is done at low pressure with several screws to ensure alignment of the different layers of the power module and contact between each EIM and the PCB.

Each motherboard includes a gate driver circuit for one of the cell's MOSFET. The electrical connection between both MOSFET is made by the lower motherboard, while the upper one allows to connect the DC-link busbar to the switching cell. Finally, concerning the dynamic electrical behavior, the integration of ceramic decoupling capacitors as close as possible to the dies, i.e. on the upper motherboard, allows to minimize the stray inductance of the switching cell. This decoupling stage is here realized by ten ceramic capacitors (1kV - 6.8nF and C0G dielectric material) in parallel, leading therefore to a total decoupling stage of 68nF.

This assembly benefits from modular and easier disassembly possibilities thanks to respectively single chip prepackages and non-soldered electrical connections in the switching cell with low pressure and EIM. A final switching cell assembly is represented in Fig. 3. As this concept aims to investigate a new packaging technique, static and dynamic electrical characterizations are mandatory to assess the performances of this solution.

<figure><img src="image_4.png" /><figcaption>Fig. 3: Final assembly of the developed switching cell (top view).</figcaption></figure>

## III. ELECTRICAL CHARACTERIZATION METHODOLOGY

This section aims to present the overall methodology employed for the characterization of the developed power module. The first subsection presents the different EIM solutions implemented in this study. The second and third subsections present experimental tests benches and protocols used for the respectively static and dynamic characterizations. Finally, the last subsection proposes a parametric study related to the impact of pressure distribution on electrical performances of the power module.
<figure><img src="image_5.png" /><figcaption>Fig. 4: Synoptic pattern of the developed switching cell with associated electrical schematic.</figcaption></figure>

### A. Copper foam EIM vs bare copper interposers

The main objective of the power module electrical characterization is to assess the benefit of electrical interconnection made with copper foams as EIM. For that, two different switching cells are characterized. The first switching cell is represented by an electrical interconnection with EIM made of copper foams represented in Fig. 5. In order to evaluate the interest of this material as power electrical interconnection, another more classical solution, where EIM are made of bare copper interposers, is developed. Keeping these two solutions for the comparison allows to quantify if a soft material, i.e. deformable, is more interesting in the case of pressure assembly power module compared to a massive interconnection represented by copper interposers. For these two solutions, the final thicknesses of the EIMs are 2mm when the switching cell is totally pressed with the different screws.

<figure><img src="image_6.png" /><figcaption>Fig. 5: Different EIM used for the switching cell assembly, each EIM final thickness is 2mm.</figcaption></figure>

### B. Characterization method for the power module resistance

The objective of the static characterization is to quantify the electrical resistance of the power module and to assess the impact of the electrical interconnection with EIM. The different resistances constituting the assembly, i.e. PCB motherboards, PCB prepackages, MOSFETs and EIMs, can be represented as a resistance network depicted in Fig. 6 with an isometric view. For simplicity, only four different EIMs are represented for each interconnection between PCB prepackages and motherboards. This resistance network is simplified in a two-dimensions (2D) representation depicted in Fig. 7 to represent the different measured resistances and the V<sub>DS</sub> measurement locations.

<figure><img src="image_7.png" /><figcaption>Fig. 6: Resistance network isometric view of the developed assembly with 4 EIMs represented for each interconnection.</figcaption></figure>

<figure><img src="image_8.png" /><figcaption>Fig. 7: 2D resistance network simplification used for power module resistance characterization and location of V<sub>DS</sub> measurements.</figcaption></figure>

The static characterization is done with each MOSFET in conduction mode (V<sub>GS</sub>=15V), while a curve tracer (B1505A from Agilent Technologies) is used to inject pulsed current of 5A between DC+ and DC- terminals (see Fig. 7). Voltage measurements between different potentials of the switching cell represented in Fig. 7 allows to deduce several resistances of the power module assembly. By measuring V<sub>TOT</sub>, V<sub>DS1</sub> and V<sub>DS2</sub>, resistances R<sub>TOT</sub>, R<sub>DSon,HS</sub> and R<sub>DSon,LS</sub> can respectively be obtained. Considering these latter and applying (1), the packaging resistance R<sub>pack</sub> can be deduced. This last resistance can be attributed to all electrical interconnections of the power module made of the PCB copper tracks (motherboards and prepackages) as well as the resistance of EIMs.
$$R_{pack} = R_{TOT} - (R_{Dson,HS} + R_{Dson,LS}) \quad (1)$$

### C. Characterization method for the power module stray inductance

The main goal of this dynamic characterization is to quantify the power module parasitic stray inductance in order to compare with classical MCM concepts. Stray inductance is one of the most important electrical parameter to minimize in power modules. Indeed, WBG semiconductors being very sensitive to parasitic elements, a high stray inductance can lead to overvoltage and oscillations [6].

The Low-Voltage Oscillating Circuit (LVOC) method is used to characterize the stray inductance of the power module, experimental test bench of this method is depicted in Fig. 8. With Low-Side (LS) MOSFET always in conduction mode ($V_{GS}=15V$) and active control of the High-Side (HS) one, an oscillating circuit can be created between C and $L_s$ when the decoupling stage is biased with low-voltage, in this case around 2V, and HS MOSFET is turned-on. The oscillating frequency $F_{osc}$ measurement of the voltage across the decoupling stage allows to deduce the stray inductance of the power module by applying (2).

<figure><img src="image_9.png" /><figcaption>Fig. 8: Electrical schema of LVOC characterization method.</figcaption></figure>

$$F_{osc} \approx \frac{1}{2\pi\sqrt{L_s C}} \quad (2)$$

### D. Impact of the pressure distribution on the electrical properties of the power module

In the case of pressure-based assembly power modules, the pressure distribution on the entire module area is an important aspect to control. Indeed, a non-regular clamping pressure can affect the contact resistance of electrical interconnections and lead to inhomogeneous current repartition, leading to a deterioration of electrical properties i.e. resistance and stray inductance [7]. This problematic can be pointed out in the case of EIM made of solid copper interposers due to their non-deformable structure with possible surface roughness and irregular planarity, resulting in high electrical contact resistance. On the contrary, EIM made of copper foams lie on more degrees of freedom in regards to mechanical properties due to their porous mechanical structure, making them deformable. In case of non-regular clamping pressure, the copper foam can accept mechanical deformation and thus bridge level differences or mechanical tilts. These two different

mechanisms resulting from non-regular pressure distribution are represented in Fig. 9.

<figure><img src="image_10.png" /><figcaption>Fig. 9: Mechanical contact representation for each EIM in case of non-regular pressure distribution.</figcaption></figure>

A top view of the power module with screws placement compared to the EIM and decoupling capacitors location is represented in Fig. 10. Due to the pressure assembly made by twelve different screws, the power module clamping pressure modification is simplified by tightening or not the screws of Fig. 10 containing a red star. The impact of pressure distribution on static and dynamic properties of foam and copper cells can therefore be evaluated. The screws concerned by this modification are chosen to have an impact on the high frequency current repartition, i.e. close to the decoupling stage. Additionally, external screws close to Gate and Kelvin Source of MOSFET, are kept tight to keep the controllability of both semiconductors.

<figure><img src="image_11.png" /><figcaption>Fig. 10: Synoptic pattern of power module with screws location (top view). A star on a screw indicates that it can be untightened.</figcaption></figure>

## IV. EXPERIMENTAL RESULTS

The resistance and stray inductance results of the foam and copper switching cells are presented in a first subsection when considering a total clamping pressure of the power module with twelve screws. Then, the pressure distribution impact is quantified by tightening or not several screws.

### A. Power module results for a total clamping pressure

Experimental results of both switching cell resistances are depicted in Table 2. Indicated resistances represent the average of eight different measurements on a single current pulse. All the results depicted in Table 2 represent therefore the average $\mu$ and associated standard deviation $\sigma$ of each resistance.
Comparison of both switching cells results indicates very close static electrical performances. Indeed, with R<sub>TOT</sub> of foam and copper cells respectively equal to 32.8mΩ and 32.9mΩ, no difference can be highlighted between both cells. This first result indicates that the total power module resistance is faintly sensitive to the EIM material. The same conclusion can be drawn regarding the on-state resistances of each MOSFET. Finally, packaging resistance of each cell can be computed thanks to (1). With R<sub>pack</sub> of foam and copper cells respectively equal to 2.3mΩ and 2.4mΩ, a very low difference can be highlighted between both cells. Also, each R<sub>pack</sub> represents 7% of the total power module resistance. This last conclusion indicates a non-negligible impact of the packaging resistance on power module static electrical performance, leading for example to higher conduction losses and possible lower conversion efficiency. This non-negligible impact of the packaging resistance can however be reduced by increasing the thickness of PCB copper tracks which is only 35 µm in this setup.

<table><caption>Table 2: Power modules resistances and stray inductances experimental results in the case of total clamping pressure.</caption><thead><tr><th></th><th colspan="2">Foam Cell</th><th colspan="2">Copper Cell</th></tr><tr><th></th><th>μ</th><th>σ</th><th>μ</th><th>σ</th></tr></thead><tbody><tr><th>R<sub>TOT</sub></th><td>32.8mΩ</td><td>28.6μΩ</td><td>32.9mΩ</td><td>18.8μΩ</td></tr><tr><th>R<sub>DSon,HS</sub></th><td>15.0mΩ</td><td>36.3μΩ</td><td>15.0mΩ</td><td>31.5μΩ</td></tr><tr><th>R<sub>DSon,LS</sub></th><td>15.4mΩ</td><td>27.9μΩ</td><td>15.4mΩ</td><td>34.2μΩ</td></tr><tr><th>R<sub>pack</sub></th><td colspan="2">2.3mΩ</td><td colspan="2">2.4mΩ</td></tr><tr><th>L<sub>s</sub></th><td>2.7nH</td><td>63.6pH</td><td>2.6nH</td><td>233pH</td></tr></tbody></table>

An example of LVOC experimental result of the copper foam switching cell is represented in Fig. 11. The oscillating frequency is clearly identified when the HS MOSFET is turned-on, i.e. when V<sub>GS</sub> voltage is equal to 15V. With a frequency equals to 11.76MHz, a stray inductance of 2.7nH can be deduced with (2) for this test.

<figure><img src="image_12.png" /><figcaption>Fig. 11: Experimental result example of Cell A for stray inductance characterization with LVOC method.</figcaption></figure>

All the results of this dynamic characterization are summarized in Table 2 for both switching cells. These results represent the average stray inductance with associated standard deviation on two different LVOC tests. Experimental results of respectively 2.7nH and 2.6nH can be obtained for foam and copper cells. This 5% difference allows to underline that the power module stray inductance is not sensitive to EIM solution in the present configuration. With stray inductance of the power module lower than 3nH, the proposed packaging concept can be compared to MCM concepts on dynamic behavior.

With these static and dynamic characterizations, it can be concluded that the both EIM solutions used for power electrical interconnections have not any influence on the power module electrical properties when 12 screws are tightened. It can be explained by the deformability of the PCBs under these pressure constraints.

The impact of the pressure distribution is investigated in the next subsection with the modification of the clamping pressure as described before in §III.C.

## B. Modification of the clamping pressure

The same resistance and inductance characterizations are done for both switching cells with a modification of the pressure distribution. For that, different screws are tightened or not as described before. Table 3 summarized all the results. For each characterization, N represents the number of screws tightened. The different packaging resistance and stray inductance values represent the average result obtained on eight different measurements for the resistance and two different for the stray inductance.

<table><caption>Table 3: Power modules resistances and stray inductances experimental results in case of non-regular clamping pressure.</caption><thead><tr><th></th><th>N</th><th>12</th><th>11</th><th>10</th><th>9</th><th>8</th></tr></thead><tbody><tr><th rowspan="2">Foam Cell</th><th>R<sub>pack</sub> [mΩ]</th><td>2.4</td><td>2.4</td><td>2.5</td><td>2.8</td><td>2.7</td></tr><tr><th>L<sub>s</sub> [nH]</th><td>2.7</td><td>2.7</td><td>2.8</td><td>2.9</td><td>3.2</td></tr><tr><th rowspan="2">Copper Cell</th><th>R<sub>pack</sub> [mΩ]</th><td>2.5</td><td>3.0</td><td>2.9</td><td>3.8</td><td>4.0</td></tr><tr><th>L<sub>s</sub> [nH]</th><td>2.6</td><td>3.1</td><td>3.3</td><td>4.2</td><td>5.2</td></tr></tbody></table>

Changes of the packaging resistance and the stray inductance as a function of N are depicted in respectively Fig. 12 and Fig. 13. For each switching cell, the packaging resistance increase as N decreases. Differences of 17% and 60% can be deduced between maximum and minimum packaging resistances for respectively foam and copper cells. The same behavior can be underlined for the stray inductance with differences of 19% and 100% between maximum and minimum results of each switching cells. With these results, the impact of pressure distribution is here clearly demonstrated.
<figure><img src="image_13.png" /><figcaption>Fig. 12: Packaging resistance experimental result as function of pressure distribution.</figcaption></figure>

<figure><img src="image_14.png" /><figcaption>Fig. 13: Stray inductance experimental result as function of pressure distribution.</figcaption></figure>

Results of Fig. 12 and Fig. 13 allow to underline a lower dependency to pressure distribution for foam cell. This latter being represented by EIM made of copper foam, better electrical properties can be considered for this type of material due to the possible mechanical tilt absorption thanks to deformable mechanical properties. Due to this lower increase of the packaging resistance and stray inductance, differences of respectively 48% and 63% can be pointed out for copper cell compared to foam cell when $N=8$. These differences are represented by EIM gap areas of each plots which represent the possible electrical properties improvement by changing EIM from massive to soft material interconnection.

## V. CONCLUSION

This paper presents a modular 3D pressure-based power module developed with Single-Chip Module (SCM) packaging concept. This power module design holds on the assembly of two identical prepackages containing 1.2kV SiC baredie and manufactured thanks to DBC and PCB technologies. This prepackage allows a double-side insulated cooling solution of a

single die compared to classical PCB-embedded switching cell integration. The mechanical and electrical assembly of both prepackages are respectively done by low pressure thanks to different screws, and combination of PCB motherboards and Electrical Interface Material (EIM) like copper foam. All these specifications are considered to support modularity and disassembly criteria of the power module by the development of a unique element, i.e. the prepackage, which can be extended to different power electronics topologies or set of specifications.

This new type of interconnection entails to consider the impact of EIM on static and dynamic properties of the power module. For that, two switching cells based on different EIM solutions, i.e. copper foams and massive copper interposers, are characterized. With differences between cells of 4% for packaging resistance and stray inductance, the power module electrical properties are not impacted by the EIM solution. The good results obtained for the massive interconnection is explained by the deformation of PCB when the pressure is applied regularly in the power module.

Pressure distribution is also investigated for these two types of interconnections. By tightening or not different screws of the power module assembly, the modification of resistance and stray inductance of the power module is quantified for different pressure distributions. For both cells, when screws are not tightened, the power module resistance and stray inductance increase due to worse electrical contact resistances on the EIM. This increase is however less pronounced in the case of copper foams due to their better mechanical deformability. This last conclusion entails therefore to consider soft materials for electrical interconnection in the case of pressure-based power modules. With these materials, electrical properties close to those of high-performance power modules which not support modular or disassembly criteria can be reached.

Other works aims to study a different pressure system compared to screws used here for simplicity. An external system could for example be investigated for pressure application, or the power module could be pressed between two cooling solutions. Finally, another electrical design could be proposed to increase the power density of the switching cell, and reduced packaging resistance and stray inductance to values closed to the ones of multi-chip optimized power modules.

## ACKNOWLEDGMENT

The authors would like to thank Region Auvergne-Rhônes-Alpes (TAPIR project – Pack Ambition Recherche 2021) and ANR agency (ANR-21-CE05-0037) for the financial support of the project.

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