# N-POEM: Nanostructures imprinted on polymers and Si for electromagnetic applications

C. Gourgon, A. Ferchichi, M. Panabière, E. Grinenval, O. Desplats, J.B. Brückner, Ludovic Escoubas, Judikaël Le Rouzo, N. Mikuszeit, B. Viala, et al.

► To cite this version:

C. Gourgon, A. Ferchichi, M. Panabière, E. Grinenval, O. Desplats, et al., N-POEM: Nanostructures imprinted on polymers and Si for electromagnetic applications. Micro- and Nano-Engineering conference- MNE 2014, 2014, Lausanne, Switzerland. [hal-01798495](https://hal.science/hal-01798495)

HAL Id: hal-01798495

https://hal.science/hal-01798495

Submitted on 8 Nov 2022

HAL is a multi-disciplinary open access
archive for the deposit and dissemination of sci-
entific research documents, whether they are pub-
lished or not. The documents may come from
teaching and research institutions in France or
abroad, or from public or private research centers.

L'archive ouverte pluridisciplinaire HAL, est
destinée au dépôt et à la diffusion de documents
scientifiques de niveau recherche, publiés ou non,
émanant des établissements d'enseignement et de
recherche français ou étrangers, des laboratoires
publics ou privés.

<figure><img src="image_1.png" /></figure>

Distributed under a Creative Commons Attribution 4.0 International License
# NPOEM: Nanopatterns imprinted on Polymers for ElectroMagnetism

## Introduction

<figure><img src="image_2.png" /></figure>

* N-POEM: funded by ANR 2010-2014 / industrial exploratory project / 6 partners

* Objectives: conception, realization and characterization of periodic nanostructures for 3 electromagnetic applications: microwave absorbers, optical filters, antireflective surfaces

* Applications in aeronautics

* Nanoimptint on flexible polymers

<figure><img src="image_3.png" /></figure>

N-POEM = TRL 3-4

## Microwave absorber

### Simulation

<figure><img src="image_4.png" /></figure>

FeNi
polymer

<figure><img src="image_5.png" /></figure>

### On silicon

1. DUV or e-beam exposure

<figure><img src="image_6.png" /></figure>

2. FeNi deposition

<figure><img src="image_7.png" /></figure>

3. LR-Off

<figure><img src="image_8.png" /></figure>

<figure><img src="image_9.png" /></figure>

* Absorbance controllable from 0.8 GHz to 5 GHz

* Based on dipolar coupling between adjacent bands

* Control resonance frequency by adjustment of FeNi thickness and/or gap « d » between two adjacent bands

<figure><img src="image_10.png" /></figure>

Magnetic susceptibility as a function of gap = d »

<figure><img src="image_11.png" /></figure>

Magnetic susceptibility as a function of FeNi thickness

### Fabrication

### On large scale PET

<figure><img src="image_12.png" /></figure>

After imprint on PET

### Magnetic Characterization

<figure><img src="image_13.png" /></figure>

Fundamental mode (no external field)

Experimental susceptibility as a function of gap « d » (from 200 nm to 900 nm) of FeNi patterns on silicon

FeNi thickness: 200 nm

<figure><img src="image_14.png" /></figure>

Good agreement between experimental results and simulation

## Optical filter

<figure><img src="image_15.png" /></figure>

3 designs have been studied

### Ag crosses

<figure><img src="image_16.png" /></figure>

Simulation results demonstrate that Ag crosses are opposite to achieve high reflectivity in band III

### W cones

<figure><img src="image_17.png" /></figure>

* Fabrication by DUV lithography and plasma etching

* PVD deposition of W

<figure><img src="image_18.png" /></figure>

Difference between experimental results and simulation due to columnar deposition which induces some diffusion and light trapping in bands II and III

W cones are not adapted to specifications

### W egg box

<figure><img src="image_19.png" /></figure>

Comparison between experimental results (red) and simulation (blue): good agreement with specifications; deviation of 10% in band III due to non flat top surfaces

## Antireflective surface

<figure><img src="image_20.png" /></figure>

<figure><img src="image_21.png" /></figure>

Fabrication by E-beam lithography and specific plasma etching processes

<figure><img src="image_22.png" /></figure>

<figure><img src="image_23.png" /></figure>

Optical results: Good agreement with simulation and specification

## Conclusion

* 3 demonstrators realized and characterized, corresponding to 3 functionalities

* Good agreement with specifications and simulation

* Perspectives: increase TRL level and evaluate defect impact and aging of the patterns on functionalities for industrial applications

## References

[1] J.B. Brückner et al. Optics Express 21 (14) 2013 – p 16992-17006

[2] J.B. Brückner et al. Applied Physics Letters 104 2014 p 081114

[3] J.B. Brückner et al. Optics Express 21 (13) 2014 p 16043-16055