English:
[0001] Wave division multiplexing (WDM) is a method of communication that may be used to communicate multiple channels over a single fiber optic cable where each signal is transmitted with a distinct wavelength beam. WDM systems may utilize multiple fibers in order to increase the capacity.
[0003] Figure 1 illustrates an example multiplexer (MUX) device;
[0004] Figure 2 illustrates a first example de-multiplexer (DEMUX) device;
[0005] Figure 3 illustrates a second example DEMUX device; and
[0006] Figure 4 illustrates an example process for fabricating MUX and DEMUX devices. DETAILED DESCRIPTION
[0007] Wavelength division multiplexing (WDM) is an approach to scale bandwidth density in datacenters without the need to increase fiber count over multiple generations. Example systems and methods described herein may provide a two dimensional (2D) WDM optoelectronic (OE) engine. The OE engine may be composed of the following components: 1) 2D vertical cavity surface emitting laser (VCSEL) and/or surface illuminated photodetector (SI- PD) arrays, 2) zig-zag optical multiplexer and/or de-multiplexer (MUX/DEMUX) components, 3) 2D output/input coupling interfaces, and 4) 2D fiber (e.g., ferules/cables) arrays. The example systems may take advantage of the 2D wafer scale fabrication of VCSELs and SI-PDs to construct 2D WDM Tx (transmit) and Rx (receive) OE engines.
[0008] The example systems and methods described herein may provide a path to efficiently use embedded fiber infrastructure in datacenters by increasing the bandwidth density and gracefully scaling bandwidth demands from generation to generation without having to increase fiber count.
[0009] Figure 1 illustrates an example multiplexer (MUX) device 100 formed on a substrate (e.g., a printed circuit board or PCB) 110 and including a plurality of semiconductor laser components (e.g., VCSELs) 120, and an optical MUX component (e.g., a zig-zag MUX component) 130 coupled to two optical fibers 150-1 and 150-2. In this example, the MUX device 100 includes four semiconductor laser components 120-1, 120-2, 120-3 and 120-4, but other numbers of semiconductor laser components 120 may be used, depending, for example, on the size of the MUX device 100. The substrate 110 is a PCB in this example, but other substrates may be used.
[0010] The semiconductor laser components 120 may be mounted in a flip-chip fashion on the substrate 110 as illustrated in Figure 1. In this example MUX device 100, each of the semiconductor laser components 120 includes two lasers (e.g., VCSELs) 125. The semiconductor laser components 120 may be configured to emit different wavelength laser beams to provide for the WDM capabilities. For example, the semiconductor laser component 120-1 includes a first laser 125-1 and a second laser 125-2 that each may emit a laser beam of a first wavelength, the semiconductor laser component 120-2 includes a third laser 125-3 and a fourth laser 125-4 that each may emit a laser beam of a second wavelength, the semiconductor laser component 120-3 includes a fifth laser 125-5 and a sixth laser 125-6 that each may emit a laser beam of a third wavelength, and the semiconductor laser component 120-4 includes a seventh laser 125-7 and an eighth laser 125-8 that each may emit a laser beam of a fourth wavelength. The first, second, third and fourth wavelengths are each a different wavelength.
[0011] The optical MUX component 130 receives the multiple laser beams from the semiconductor laser components 120 and couples these laser beams to the two fibers 150-1 and 150-2 via two output interfaces 145-1 and 145-2. The output interfaces 145 may be an anti- reflection coated surface, collimator lenses, high contrast grating lens, prisms, or other form of coupling micro-optics.
[0012] The optical MUX component 130 includes three reflectors (e.g., relay mirrors) 140-1, 140-2 and 140-3 and three wavelength selective filters 135-1, 135-2 and 135-3. As an alternative to three separate reflectors 140-1, 140-2 and 140-3, a single refiector 140 could be used in some examples. Each of the wavelength selective filters 135 may be configured to allow a certain wavelength, or range of wavelengths, of light to pass through substantially unaffected while reflecting other wavelengths. For example, the first wavelength selective filter 135-1 may allow the laser beams of the second wavelength emitted from the lasers 125-3 and 125-4 to pass while reflecting the laser beams of the first wavelength that are emitted from the lasers 125-1 and 125- 2. Similarly, the second wavelength selective filter 135-2 may allow the laser beams of the third wavelength emitted from the lasers 125-5 and 125-6 to pass while reflecting the laser beams of the first and second wavelengths and the third wavelength selective filter 135-3 may allow laser beams of the fourth wavelength emitted from the lasers 125-7 and 125-8 to pass while reflecting the laser beams of the first, second and third wavelengths. In this way, the optical MUX component 130 is able to couple all eight laser beams onto the output interfaces 145-1 and 145-2, which may than couple the laser beams to the first and second fibers 150-1 and 150-2.
[0013] The reflectors 140, the wavelength selective filters 135 and the lasers 125 are positioned relative to each other such that a first one of the laser beams of each wavelength, the first, second, third and fourth wavelengths in this example, are directed to the first output interface 145-1, while a second one of the laser beams of each wavelength are directed to the second output interface 145-2. The output interfaces 145-1 and 145-2 couple the combined or collimated sets of first and second ones of the laser beams to the first and second fibers 150-1 and 150-2, respectively.
[0014] The example MUX device 100 uses VCSELs that emit lasers vertically away from the substrate 110 and the optical MUX component 130 is positioned above the semiconductor laser components 120. In other example MUX devices, other orientations of optical MUX component and semiconductor laser components may be used. In other examples, the MUX device 100 uses VCSELs with integrated lenses to collimate and/or tilt the laser emission from the VCSEL.
[0015] The example MUX device 100 illustrates a single row of semiconductor laser components 120, single row of mirrors 140, and a single row of output fibers 150. However, multiple rows of semiconductor laser components 120, multiple rows of filters 135, multiple rows of mirrors 140, and multiple rows of output fibers 150 may be provided in two dimensional arrays (e.g., by replicating multiple rows into or out of the page as shown in Figure 1) in order to increase capacity and provide a compact device to take advantage of two dimensional semiconductor laser arrays and/or two dimensional fiber arrays. In some examples, the multiple fibers may be contained in a ferule or optical connector. In addition, a MUX device may include a first array of semiconductor laser components 120 with a first MUX component 130 on a left portion of the substrate 110, as shown in Figure 1, as well as a second array of semiconductor laser components 120 and a second MUX component 130 positioned in mirror-fashion on the right side of the substrate 110. In other examples, the first and second MUX components are a single unit, rather than distinct parts.
[0016] The example semiconductor laser components 120 are illustrated with two lasers 125. However, semiconductor laser components with three or more lasers per component may also be used. A factor that may limit the number of lasers per semiconductor laser component is the resulting angle of incidence of the lasers on the reflectors 140 and the wavelength selective filters 135. Angle of incidences less than or equal to 15 degrees may be used in most applications, for example in polarization independent applications. If polarization locked VCSELs are employed, the angle of incidence can be larger than 15 degrees. A thicker optical MUX component 130 may allow for greater numbers of lasers per component at the expense of a thicker MUX device 100. The MUX device 100 may be preferably two millimeters thick or less.
[0017] Figure 2 illustrates a first example de-multiplexer (DEMUX) device 200 formed on substrate 110 and including a plurality of photodetector devices (e.g., SI-PDs) 220, and an optical DEMUX component (e.g., a zig-zag DEMUX component) 230 coupled to two input fibers 150-3 and 150-4. In this example, the DEMUX device 200 includes four photodetector devices 220-1, 220-2, 220-3 and 220-4, but other numbers of photodetector devices 220 may be used, depending, for example, on the number of unique wavelengths to demultiplex. In some examples, the photodetector devices 220 may be integrated with lenses to focus and/or tilt the incident light for efficient coupling to the photodetector.
[0018] In various examples, each photodetector device 220 includes multiple photodetectors. In the example illustrated in Figure 2, each photodetector device 220 may have two photodetectors. The photodetector devices 220 may be mounted in flip-chip fashion on the substrate 110 as illustrated in Figure 2. In this example DEMUX device 200, each of the photodetector devices 220 may be configured to detect different wavelength laser beams to provide for WDM receiver capabilities. For example, the photodetector device 220-1 may detect laser beams of a first wavelength, the photodetector device 220-2 may detect laser beams of a second wavelength, the photodetector device 220-3 may detect laser beams of a third wavelength, and the photodetector device 220-4 may detect laser beams of a fourth wavelength. The first, second, third and fourth wavelengths are each a different wavelength. The first, second, third and fourth wavelengths detected by the photodetector devices 220 may be the same or different respective wavelengths of the first, second, third and fourth wavelengths emitted by the semiconductor laser components 120 discussed above in reference to Figure 1.
[0019] The optical DEMUX component 230 receives first and second sets of multiple different wavelength laser beams from a third fiber 150-3 and a fourth fiber 150-4 via a first input interface (e.g., a collimator, coupling lens or prism or high-contrast grating lens) 245-1 and a second input interface 245-2, respectively. The DEMUX component 230 couples these laser beams to the four photodetector devices 220 using three reflectors 240-1, 240-2 and 240-3 (e.g., relay mirrors) in combination with three wavelength selective filters 235-1, 235-2 and 235-3 in a fashion similar to the MUX component 130 in Figure 1.
[0020] As an alternative to three separate reflectors 240-1, 240-2 and 240-3, a single reflector 240 could be used in some examples. Each of the wavelength selective filters 235 may be configured to allow a certain wavelength, or range of wavelengths, of light to pass through substantially unaffected while reflecting other wavelengths. For example, the first wavelength selective filter 235-1 may allow the laser beams of the second wavelength detected by the second photodetector device 220-2 to pass while reflecting the laser beams of the first wavelength that are detected by the first photodetector device 220-1. Similarly, the second wavelength selective filter 235-2 may allow the laser beams of the third wavelength detected by the third photodetector device 220-3 to pass while reflecting the laser beams of the first and second wavelengths and the third wavelength selective filter 235-3 may allow laser beams of the fourth wavelength detected by the fourth photodetector device to pass while reflecting the laser beams of the first, second and third wavelengths. In this way, the optical DEMUX component 230 is able to focus all eight laser beams received from the input interfaces 245-1 and 245-2 onto the proper photodetecor devices 220.
[0021] The reflectors 240, the wavelength selective filters 235 and the photodetector devices 220 are positioned relative to each other such that first and second ones of the laser beams of each wavelength, the first, second, third and fourth wavelengths in this example, are directed to the each respective photodetector device 220.
[0022] The example DEMUX device 200 uses SI-PDs that detect light on an upper surface facing the substrate 110 and the optical DEMUX component 230 is positioned above the photodetector components 220. In other example DEMUX devices, other orientations of optical DEMUX component and photodetector devices may be used.
[0023] The example DEMUX device 200 illustrates a single row of photodetector devices 220 and a single row of input fibers 150. However, multiple rows of photodetector devices 220, multiple rows of filters 235, multiple rows of mirrors 240, and multiple rows of input fibers 150 may be provided in two dimensional arrays (e.g., by replicating multiple rows into or out of the page as shown in Figure 2) in order to increase capacity and provide a compact device to take advantage of two dimensional photodetector arrays and/or two dimensional fiber arrays. In addition, a DEMUX device may include a first array of photodetector devices 220 with a first DEMUX component 230 on a left portion of the substrate 110, as shown in Figure 2, as well as a second array of photodetector devices 220 and a second DEMUX component 230 positioned in mirror-fashion on the right side of the substrate 110. In other examples, the first and second DEMUX components are a single unit, rather than distinct parts.
[0024] Figure 3 illustrates a second example DEMUX device 300 formed on substrate 110 and including a single photodetector device (e.g., SI-PD) 320 in place of the multiple photodetector devices 220 shown in Figure 2. The single photodetector device 320 may be configured to detect all four wavelengths of light that are received from the input fibers 150-3 and 150-4 via the input interfaces 245-1 and 245-2. In this regard, various examples of the single photodetector device 320 may include multiple photodetectors. The configuration of DEMUX device 300 may be suitable when the range of wavelengths between the first, second, third and fourth wavelengths is small enough to be detected by the single photodetector device 320. In contrast, the DEMUX device 200, which utilizes four photodetector devices 220, may be used for cases where the first, second, third and fourth wavelengths comprise larger ranges of wavelengths. In another example, the MUX device 100 of Figure 1, the DEMUX device 200 of Figure 2 or the DEMUX device 300 of Figure 3 may be positioned on the substrate 110 in a mirror fashion to build a transceiver where the MUX device 100 and DEMUX device 200 may be a single unit.
[0025] Figure 4 illustrates an example process 400 for fabricating MUX and DEMUX devices. In various examples, the process 400 may be performed to fabricate one or more optical MUX and/or DEMUX devices, such as, for example, the MUX device 100 of Figure 1, and the
[0026] In the example illustrated in Figure 4, the process 400 may begin with the mounting of one or more semiconductor laser components on a substrate (block 404). For example, the semiconductor laser components 120 (e.g.,VCSELs) may be mounted to the substrate 110.
[0027] Upon the semiconductor laser components being mounted on the substrate 110, one or more photodetector devices (e.g., the photodetector devices 220 and/or 320) may be mounted to the substrate 110 (408).
[0028] At block 412, after the one or more semiconductor laser components are mounted to the substrate at 404, an optical multiplexer component may be coupled to the substrate aligned with the one or more semiconductor laser components. For example, the optical MUX component 130 may be coupled to the substrate in alignment with the four semiconductor laser components 120 such that respective pairs of laser beams of first, second, third and fourth wavelengths, are received from respective ones of the four semiconductor laser components 120. The MUX component may be coupled as a completed component. The various wavelength selective filters 135, the reflectors 140 and walls of the optical MUX component 130 may be formed using, but not limited to, semiconductor, MEMS and thin-film fabrication techniques.
[0029] At block 416, after the one or more photodetector devices are mounted to the substrate at 408, an optical de -multiplexer component may be coupled to the substrate aligned with the one or more photodetector devices. For example, the optical DEMUX component 230 may be coupled to the substrate in alignment with the four photodetector devices 220 such that respective pairs of laser beams of first, second, third and fourth wavelengths, are directed to respective ones of the four photodetector devices 220. Alternatively, the optical DEMUX component 230 may be coupled to the substrate in alignment with a single photodetector device 320. The optical DEMUX component may be coupled as a completed component. The various wavelength selective filters 235, the reflectors 240 and walls of the DEMUX device 230 are formed using, but not limited to, semiconductor, MEMS and thin-film fabrication techniques.
[0031] The functions performed at blocks 404-420 may be repeated until all semiconductor devices, optical devices and optical fiber assemblies have been attached to the substrate and/or to other devices such as integrated circuits. The process 400 illustrated in Figure 4 is an example only and not limiting. In various examples, the process 400 may be altered, for example, by having steps or blocks added, removed, rearranged, combined, and/or performed concurrently.
[0032] The foregoing description of various examples has been presented for purposes of illustration and description. The foregoing description is not intended to be exhaustive or limiting to the examples disclosed, and modifications and variations are possible in light of the above teachings or may be acquired from practice of various examples. The examples discussed herein were chosen and described in order to explain the principles and the nature of various examples of the present disclosure and its practical application to enable one skilled in the art to utilize the present disclosure in various examples and with various modifications as are suited to the particular use contemplated. The features of the examples described herein may be combined in all possible combinations of methods, apparatus, modules, systems, and computer program products.
[0033] It is also noted herein that while the above describes examples, these descriptions should not be viewed in a limiting sense. Rather, there are several variations and modifications which may be made without departing from the scope as defined in the appended claims.

中文:
[0001]波分复用(WDM)是一种可在单根光纤电缆中进行多通道通信的通信方法,在该单根光纤电缆中每路信号都以不同波长的光束来传输。WDM系统可以利用多根光纤来增加容量。
[0003]图1示出示例性复用器(MUX)设备;
[0004]图2示出第一示例性解复用器(DEMUX)设备;
[0005]图3示出第二示例性DEMUX设备;并且
[0006]图4示出用于制造MUX设备和DEMUX设备的示例过程。
[0007]波分复用(WDM)是扩展数据中心中的带宽密度而无需多代增加光纤数量的方法。本文所描述的示例系统和方法可提供一种二维(2D)WDM光电(OE)引擎。OE引擎可由以下部件组成:1)2D垂直空腔表面发射激光器(VCSEL)和/或表面照射式光电检测器(SI-PD)阵列;2)锯齿形光学复用器和/或解复用器(MUX/DEMUX)部件;3)2D输出/输入耦合接口;以及4)2D光纤(例如,套圈/电缆)阵列。示例性系统可利用VCSEL和SI-PD的2D晶圆级制造,来构建2DWDMTx(发射)和Rx(接收)OE引擎。
[0008]本文所描述的示例性系统和方法可提供一种通过增加带宽密度和适当调节带宽需求来有效利用数据中心中的嵌入式光纤基础结构而无需一代代地增加光纤数量的途径。
[0009]图1示出示例性复用器(MUX)设备100,复用器(MUX)设备100形成在基底(例如,印刷电路板或PCB)110上,并且包括多个半导体激光器部件(例如,VCSEL)120以及被耦合到两根光纤150-1和150-2的光学MUX部件(例如,锯齿形MUX部件)130。在本示例中,MUX设备100包括四个半导体激光器部件120-1、120-2、120-3和120-4,但也可使用其他数量的半导体激光器部件120,这取决于例如MUX设备100的大小。基底110在本示例中是PCB,但也可使用其他基底。
[0010]如图1所示,半导体激光器部件120可以以倒装芯片方式安装于基底110上。在本示例性MUX设备100中,半导体激光器部件120中的每一个都包括两个激光器(例如,VCSEL)125。半导体激光器部件120可被配置为发射不同波长的激光束,以提供WDM功能。例如,半导体激光器部件120-1包括各自可发射第一波长的激光束的第一激光器125-1和第二激光器125-2,半导体激光器部件120-2包括各自可发射第二波长的激光束的第三激光器125-3和第四激光器125-4,半导体激光器部件120-3包括各自可发射第三波长的激光束的第五激光器125-5和第六激光器125-6,并且半导体激光器部件120-4包括各自可发射第四波长的激光束的第七激光器125-7和第八激光器125-8。第一、第二、第三和第四波长是各不相同的波长。
[0011]光学MUX部件130从半导体激光器部件120接收多个激光束,并且经由两个输出接口145-1和145-2将这些激光束耦合到两根光纤150-1和150-2。输出接口145可以是抗反射涂层表面、准直透镜、高对比度光栅透镜、棱镜、或其他形式的耦合微光学器件。
[0012]光学MUX部件130包括三个反射镜(例如,中继反射镜)140-1、140-2和140-3,以及三个波长选择滤波器135-1、135-2和135-3。作为三个独立的反射镜140-1、140-2和140-3的替代,在一些示例中可以使用单个反射镜140。波长选择滤波器135中的每一个都可被配置为允许一定波长或波长范围的光基本上不受影响地通过而反射其他波长。例如,第一波长选择滤波器135-1可允许从激光器125-3和125-4发射出的第二波长的激光束通过而反射从激光器125-1和125-2发射出的第一波长的激光束。类似地,第二波长选择滤波器135-2可允许从激光器125-5和125-6发射出的第三波长的激光束通过而反射第一和第二波长的激光束,并且第三波长选择滤波器135-3可允许从激光器125-7和125-8发射出的第四波长的激光束通过而反射第一、第二和第三波长的激光束。以这种方式,光学MUX部件130能够将全部八个激光束都耦合到输出接口145-1和145-2,输出接口145-1和145-2可将激光束耦合到第一光纤150-1和第二光纤150-2。
[0013]反射镜140、波长选择滤波器135和激光器125相对于彼此来定位,使得本示例中的第一、第二、第三和第四波长中,每个波长的激光束中的第一激光束被定向到第一输出接口145-1,而每个波长的激光束中的第二激光束被定向到第二输出接口145-2。输出接口145-1和145-2将激光束中的第一激光束和第二激光束的组合集或准直集分别耦合到第一光纤150-1和第二光纤150-2。
[0014]示例性MUX设备100使用垂直远离基底110发射激光的VCSEL,并且光学MUX部件130被定位于半导体激光器部件120上。在其他示例性MUX设备中,可以使用光学MUX部件和半导体激光器部件的其他取向。在其他示例中,MUX设备100使用具有集成透镜的VCSEL,以使来自VCSEL的激光发射准直和/或倾斜。
[0015]示例性MUX设备100示出了单行的半导体激光器部件120、单行的反射镜140和单行的输出光纤150。然而,可以在二维阵列中提供多行的半导体激光器部件120、多行的滤波器135、多行的反射镜140和多行的输出光纤150(例如,通过复制多行到如图1所示的页面中或从该页面移出多行)以增加容量,并且提供一种紧凑型设备以利用二维半导体激光器阵列和/或二维光纤阵列。在一些示例中,可在套圈或光学连接器中包含多根纤维。此外,如图1所示,MUX设备可包括在基底110的左侧部分上的半导体激光器部件120和第一MUX部件130的第一阵列,以及以镜像方式定位于基底110的右侧上的半导体激光器部件120和第二MUX部件130的第二阵列。在其他示例中,第一和第二MUX部件是单个单元,而不是不同的部分。
[0016]示例性半导体激光器部件120被示出带有两个激光器125。然而,也可以使用每部件带有三个以上激光器的半导体激光器部件。一个可能会限制每个半导体激光器部件的激光器数量的因素是激光在反射镜140和波长选择滤波器135上的最终入射角。在大多数应用中,例如在偏振无关的应用中,可使用小于或等于15度的入射角。如果采用偏振锁定的VCSEL,则入射角可以大于15度。较厚的光学MUX部件130可以在较厚的MUX设备100的代价下允许每部件更多数量的激光器。MUX设备100可优选是两毫米厚或更小。
[0017]图2示出第一示例性解复用器(DEMUX)设备200,设备200形成在基底110上,并且包括多个光电检测器设备(例如,SI-PD)220、以及被耦合到两根输入光纤150-3和150-4的光学DEMUX部件(例如,锯齿形DEMUX部件)230。在本示例中,DEMUX设备200包括四个光电检测器设备220-1、220-2、220-3和220-4,但可使用其他数量的光电检测器设备220,这取决于例如欲进行解复用的独特波长的数量。在一些示例中,光电检测器设备220可以与透镜集成,以便为了有效地耦合到光电检测器而使入射光聚焦和/或倾斜。
[0018]在不同示例中,每个光电检测器设备220包括多个光电检测器。在图2所示的示例中,每个光电检测器设备220可具有两个光电检测器。如图2所示,光电检测器设备220可以以倒装芯片的方式安装于基底110上。在本示例性DEMUX设备200中,光电检测器设备220中的每一个都可被配置为检测不同波长的激光束,以提供WDM接收器功能。例如,光电检测器设备220-1可检测第一波长的激光束,光电检测器设备220-2可检测第二波长的激光束,光电检测器设备220-3可检测第三波长的激光束,并且光电检测器设备220-4可检测第四波长的激光束。第一、第二、第三和第四波长是各不相同的波长。由光电检测器设备220检测到的第一、第二、第三和第四波长可以是与以上参照图1所讨论的由半导体激光器部件120发射出的第一、第二、第三和第四波长相同或者各不相同的波长。
[0019]光学DEMUX部件230分别经由第一输入接口(例如,准直管、耦合透镜或棱镜或高对比度光栅透镜)245-1和第二输入接口245-2,接收来自第三光纤150-3和第四光纤150-4的第一和第二集合的多个不同波长的激光束。DEMUX部件230以类似于图1中的MUX部件130的方式,使用三个反射镜240-1、240-2和240-3(例如,中继反射镜)并与三个波长选择滤波器235-1、235-2和235-3相组合,来将这些激光束耦合到四个光电检测器设备220。
[0020]作为三个独立的反射镜240-1、240-2和240-3的替代,在一些示例中可使用单个反射镜240。波长选择滤波器235中的每一个都可被配置为允许一定波长或波长范围的光基本上不受影响地通过而反射其他波长。例如,第一波长选择滤波器235-1可允许由第二光电检测器设备220-2检测到的第二波长的激光束通过而反射由第一光电检测器设备220-1检测到的第一波长的激光束。类似地,第二波长选择滤波器235-2可允许由第三光电检测器设备220-3检测到的第三波长的激光束通过而反射第一和第二波长的激光束,并且第三波长选择滤波器235-3可允许由第四光电检测器设备检测到的第四波长的激光束通过而反射第一、第二和第三波长的激光束。以这种方式,光学DEMUX部件230能够将从输入接口245-1和245-2接收到的全部八个激光束都聚焦到适当的光电检测器设备220上。
[0021]反射镜240、波长选择滤波器235和光电检测器设备220相对于彼此来定位,使得本示例中的第一、第二、第三和第四波长中的每个波长的激光束中的第一激光束和第二激光束被定向到各自相应的光电检测器设备220。
[0022]示例性DEMUX设备200使用SI-PD,该SI-PD检测在面对基底110的上表面上的光,并且光学DEMUX部件230被定位于光电检测器部件220上。在其他示例性DEMUX设备中,可使用光学DEMUX部件和光电检测器设备的其他取向。
[0023]示例性DEMUX设备200示出了单行的光电检测器设备220和单行的输入光纤150。然而,可在二维阵列中提供多行的光电检测器设备220、多行的滤波器235、多行的反射镜240和多行的输入光纤150(例如,通过复制多行到如图2所示的页面或从该页面移出多行)来增加容量,并且提供一种紧凑型设备以利用二维光电检测器阵列和/或二维光纤阵列。此外,如图2所示,DEMUX设备可包括在基底110的左侧部分上的光电检测器设备220和第一DEMUX部件230的第一阵列,以及以镜像方式定位于基底110的右侧上的光电检测器设备220和第二DEMUX部件230的第二阵列。在其他示例中,第一和第二DEMUX部件是单个单元,而不是不同的部分。
[0024]图3示出第二示例性DEMUX设备300,设备300形成在基底110上,并且包括单个光电检测器设备(例如,SI-PD)320来代替在图2中示出的多个光电检测器设备220。单个光电检测器设备320可被配置为对经由输入接口245-1和245-2从输入光纤150-3和150-4接收到的全部四个波长的光进行检测。在这一点上,单个光电检测器设备320的不同示例可包括多个光电检测器。当第一、第二、第三和第四波长之间的波长范围小到足以被单个光电检测器设备320检测出时,DEMUX设备300的结构可能是适当的。相比之下,使用四个光电检测器设备220的DEMUX设备200可被用于第一、第二、第三和第四波长包括较大范围的波长的情况。在另一示例中,图1的MUX设备100、图2的DEMUX设备200、或图3的DEMUX设备300可以以镜像方式定位于基底110上,以建立收发机,其中MUX设备100和DEMUX设备200可以是单个单元。
[0025]图4示出用于制造MUX和DEMUX设备的示例性过程400。在不同的示例中,可以执行过程400以制造一个或多个光学MUX和/或DEMUX设备,这样的设备例如图1的MUX设备100以及图2和图3的DEMUX设备200和300。现在将参考图1、图2和图3来描述过程400。
[0026]在图4所示的示例中,过程400可以以在基底上安装一个或多个半导体激光器部件来开始(框404)。例如,半导体激光器部件120(例如,VCSEL)可被安装到基底110。VCSEL可以以例如倒装芯片方式安装到基底110。
[0027]一旦半导体激光器部件被安装于基底110上,一个或多个光电检测器设备(例如,光电检测器设备220和/或320)就可被安装到基底110(408)。
[0028]在框412处,在404处将一个或多个半导体激光器部件安装到基底之后,光学复用器部件可被耦合到与一个或多个半导体激光器部件相对准的基底。例如,光学MUX部件130可被耦合到与四个半导体激光器部件120相对准的基底,使得第一、第二、第三和第四波长的激光束中的各个对是从四个半导体激光器部件120中的相应半导体激光器部件120接收到的。MUX部件可被耦合为完整的部件。各个波长选择滤波器135、反射镜140、和光学MUX部件130的壁可使用但不限于半导体、MEMS和薄膜制造技术来形成。
[0029]在框416处,在408处将一个或多个光电检测器设备安装到基底之后,光学解复用器部件可被耦合到与一个或多个光电检测器设备相对准的基底。例如,光学DEMUX部件230可被耦合到与四个光电检测器设备220相对准的基底,使得第一、第二、第三和第四波长的激光束中的各个对被定向到四个光电检测器设备220中的相应光电检测器设备220。可替代地,光学DEMUX部件230可被耦合到与单个光电检测器设备320相对准的基底。光学DEMUX部件可被耦合为完整的部件。各个波长选择滤波器235、反射镜240、和DEMUX部件230的壁可使用但不限于半导体、MEMS和薄膜制造技术来形成。
[0031]在框404至420处执行的功能可以被重复,直到所有的半导体设备、光学设备和光纤组件已被附接到基底和/或诸如集成电路等其他设备。在图4中所示的过程400仅是一个示例而不是限制性的。在不同的示例中,过程400可以例如通过具有添加、删除、重新排列、组合和/或同时进行的步骤或框而被改变。
[0032]以上描述的各种示例是为了说明和描述的目的。以上描述并不旨在穷举或限制所公开的示例,并且根据上述教导可进行修改和变化,或可从各种示例的实践中获得修改和变化。本文所讨论的示例被选择并描述,以解释本公开以及它的实际应用的各种示例的原理和性质,以使本领域技术人员能够应用各种示例中的本公开以及适合于预期的特定用途的各种修改。本文所描述的示例的特征可以在方法、装置、模块、系统和计算机程序产品的所有可能的组合下进行组合。
[0033]在此还注意到,尽管以上描述了示例,但是不应在限制性意义上看待这些描述。相反,可以在不脱离在所附权利要求书所限定的范围的情况下进行若干变化和修改。