Office Action 3: Notice of Allowance (2025-03-06)

CLAIMS:
AMENDMENTS TO THE CLAIMS

1\. (Currently Amended) A support unit for supporting a substrate, the support unit comprising:a support plate configured to support a substrate, and which includes an electrostatic electrode providing electrostatic force to the substrate;
a heater provided inside the support plate and configured to heat the substrate;
an insulating plate provided under the support plate as an insulating substance; and
a bimetal member disposed inside the support plate and configured to compensate for bending of the support plate due to heat,
wherein the bimetal member includes,
a pin provided to be contactable with a bottom surface of the substrate that is placed on the support plate;
a first member configured to support the pin, the pin coupled to an upper surface of the first member; and
a second member provided to surround the first member, and
the pin is provided to move up or move down according to a difference in the amount of thermal deformation between the first member and the second member= wherein a movement direction of the pin according to the difference in the amount of thermal deformation between the first member and the second member is a direction opposite to a direction in which the support plate is bent according to a difference in the amount of thermal deformation between the support plate and the insulating plate in a region in which the bimetal member is provided.

2\. (Cancelled)

3\. (Original) The support unit of claim 1, wherein a thermal deformation rate of the first member is different from a thermal deformation rate of the second member.

4\. (Original) The support unit of claim 3, wherein the thermal deformation rate of the first member is larger than the thermal deformation rate of the second member.

5\. (Original) The support unit of claim 1, wherein a volume of each of the first member and the second member is determined according to a difference in the amount of thermal deformation between the support plate and the insulating plate.

6\. (Original) The support unit of claim 1, wherein the difference in the amount of thermal deformation between the first member and the second member is determined according to a difference in the amount of thermal deformation between the support plate and the insulating plate.

7\. (Original) The support unit of claim 1, wherein a plurality of bimetal members is provided, andeach of the bimetal members is disposed in a hollow hole formed inside the support plate.

8\. (Previously Presented) The support unit of claim 7, wherein the support plate includes:a dielectric plate configured to support the substrate, and which includes the electrostatic electrode therein and is provided as a dielectric substance; and

a lower plate disposed under the dielectric plate and provided with a cooling flow path therein, and
the bimetal member is disposed in the hollow hole formed inside the dielectric plate.

9\. (Currently Amended) A support unit for supporting a substrate, the support unit comprising:a first plate configured to support the substrate;
a heater provided inside the first plate and configured to heat the substrate;
a second plate provided under the first plate, the second plate comprising a different material than a material of the first plate; and
a bimetal member disposed inside the first plate and configured to compensate for bending of the first plate,
wherein the bimetal member includes,
a pin provided to be contactable with a bottom surface of the substrate that is placed on the first plate;
a first member configured to support the pin, the pin coupled to an upper surface of the first member; and
a second member provided to surround the first member, and
the pin is provided to move up or move down according to a difference in the amount of thermal deformation between the first member and the second member= wherein a movement direction of the pin according to the difference in the amount of thermal deformation between the first member and the second member is a direction opposite to a direction in which the first plate is bent according to a difference in the amount of thermal deformation between the first plate and the second

plate in a region in which the bimetal member is provided.

10\. (Cancelled)

11\. (Original) The support unit of claim 9, wherein a thermal deformation rate of the first member is different from a thermal deformation rate of the second member.

12\. (Previously Presented) The support unit of claim 11, wherein the thermal deformation rate of the first member is larger than the thermal deformation rate of the second member.

13\. (Original) The support unit of claim 9, wherein a volume of each of the first member and the second member is determined according to a difference in the amount of thermal deformation between the first plate and the second plate.

14\. (Original) The support unit of claim 9, wherein the difference in the amount of thermal deformation between the first member and the second member is determined according to a difference in the amount of thermal deformation between the first plate and the second plate.

15\. (Previously Presented) The support unit of claim 9, wherein the amount of thermal deformation of the first plate is larger than the amount of thermal deformation of the second plate.

16\. (Original) The support unit of claim 9, wherein the first plate includes a

dielectric substance, and the second plate includes an insulating substance.

17\. (Currently Amended) A substrate treating apparatus, comprising:a dielectric plate configured to support a substrate, and which includes an electrostatic electrode therein and is provided as a dielectric substance;
a lower plate disposed under the dielectric plate and provided with a cooling flow path therein;
a heater provided inside the dielectric plate and configured to heat the substrate;
an insulating plate provided under the lower plate as an insulating substance;
and a bimetal member disposed inside the dielectric plate and configured to compensate for bending of the dielectric plate due to heat,wherein the bimetal member includes,
a pin provided to be contactable with a bottom surface of the substrate that is placed on the dielectric plate;
a first member configured to support the pin, the pin coupled to an upper surface of the first member; and
a second member provided to surround the first member, and
the pin is provided to move up or move down according to a difference in the amount of thermal deformation between the first member and the second member= wherein a movement direction of the pin according to the difference in the amount of thermal deformation between the first member and the second member is a direction opposite to a direction in which the dielectric plate is bent according to a difference in the amount of thermal deformation between the dielectric plate, the lower

plate, and the insulating plate in a region in which the bimetal member is provided.

18\. (Cancelled)

19\. (Original) The substrate treating apparatus of claim 17, wherein the amount of thermal deformation of the first member is larger than the amount of thermal deformation of the second member.

20\. (Original) The substrate treating apparatus of claim 17, wherein the difference in the amount of thermal deformation between the first member and the second member is determined according to a difference in the amount of thermal deformation between the dielectric plate, the lower plate, and the insulating plate.

OFFICE ACTION:
Notice of Pre-AIA  or AIA  Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Continued Examination Under 37 CFR 1.114
A request for continued examination under 37 CFR 1.114, including the fee set forth in 37 CFR 1.17(e), was filed in this application after final rejection.  Since this application is eligible for continued examination under 37 CFR 1.114, and the fee set forth in 37 CFR 1.17(e) has been timely paid, the finality of the previous Office action has been withdrawn pursuant to 37 CFR 1.114.  Applicant's submission filed on 12/12/2024 has been entered.
Response to Amendment
Applicants’ submission of amendment of the Specification and replacement drawing, filed on 10/15/2024, is acknowledged. Applicants’ submission, filed on 10/15/2024, in response to claims 1-20 rejection from the final office action (08/15/2024), by amending claims 1, 9, and 17 and cancelling claims 2, 10, and 18 is entered and will be addressed below.
Examiner’s amendment
An examiner’s amendment to the record appears below. Should the changes and/or additions be unacceptable to applicant, an amendment may be filed as provided by 37 CFR 1.312. To ensure consideration of such an amendment, it MUST be submitted no later than the payment of the issue fee.
Claims 1, 9, and 17 have been amended as following –
Claim 1, line 13, before “first member” has been inserted with --  circular shaped  --.
Claim 1, line 15, before “second member” has been inserted with -- ring shaped  --.
Claim 1, line 15, before “the first member” has been inserted with -- the circumference of  --.
Claim 9, line 12, before “first member” has been inserted with --  circular shaped  --.
Claim 9, line 14, before “second member” has been inserted with -- ring shaped  --.
Claim 9, line 14, before “the first member” has been inserted with -- the circumference of  --.
Claim 17, line 15, before “first member” has been inserted with --  circular shaped  --.
Claim 17, line 17, before “second member” has been inserted with -- ring shaped  --.
Claim 17, line 17, before “the first member” has been inserted with -- the circumference of  --.
Authorization for this examiner’s amendment was given in a telephone interview with attorney Ryan Cribbs on 01/21/2025.
Allowable Subject Matter
Claims 1, 3-9, 11-17, and 19-20 are allowed.
The following is a statement of reasons for the indication of allowable subject matter: Applicants’ IDS KR 20200052568, teaches a pin couple to the upper surface of a first member (Figs. 1 and 4). The prior of record, JP H06333810, teaches the bimetal materials 28 and 30, with material 28 at the bottom of the material 30 but does not teach the material 28 surrounding the circumference of circular shape material 30. US 20080017104 and 20110292562 does not remedy this deficiency. The prior arts, alone or in combination, does not fairly teaches the limitations of:
“a circular shaped first member configured to support the pin, the pin coupled to an upper surface of the first member; and
a ring shaped second member provided to surround the circumference of the first member” in the context of claim 1, 9, and 17, respectively.
Conclusion

APPLICANT REBUTTAL: REMARKS
Claims 1-20 are currently pending in the present application, with claims 1, 9, and 17 being written in independent form. Claims 1, 9, and 17 have been amended. Claims 2, 10, and 18 are cancelled without prejudice or disclaimer. Support for the amendments may be found, for instance, in paragraph [0063], of the published specification. Thus, no new matter has been introduced into the claims.
Drawings
The Office Action indicates that the drawings have been accepted by the Examiner.
Objection to the Specification
The specification stands objected to because of informalities. This objection has been rendered moot by the present amendments. Accordingly, Applicants request the Examiner to reconsider and withdraw this objection.
Claim Interpretation
On pages 3-5 of the Office Action, the Examiner sets forth interpretations of claims 1, 5, 6, 9-16 and 20. Applicant acknowledges the interpretations without express agreement or disagreement with regard to the interpretations.
Claim Rejection under 35 U.S.C.
§
Claims 1-20 stand rejected under 35 U.S.C. § 103 as being unpatentable over JP H06333810 ("'810"), in view of U.S. 20080017104 ("'104"). (US 2011029562 is evidenced for ESC deformation due to thermal expansion difference.).
Applicants traverse this rejection for the reasons below.
To establish a prima facie case of obviousness, all claim limitations must be taught or suggested by the cited art. See, In re Royka, 490 F.2d 981,985,180 USPQ 580, 583 (CCPA, 1974; see also, In re Vaeck, 947 F. 2d 488, 20 USPQ2d 1438 (Fed. Cir. 1991). There must be some articulated reasoning with
some rational
underpinning to support the legal conclusion of obviousness. In re Kahn, 441 F.3d 977, 988, 78 USPQ2d 1329, 1336 (Fed. Cir. 2006).
Without acquiescing to the rejections, claim 1 has been amended to recite, in part, "the bimetal member includes...a first member configured to support the pin,
the
pin coupled to an upper surface of the first member,"
and
"wherein a movement direction of the pin according to the difference in the amount of thermal deformation between the first member and the second member is a direction opposite to a direction in which the support plate is bent according to a difference in the amount of thermal deformation between the support plate and the insulating plate in a region in which the bimetal member is provided."
With regard to claim 1, the Examiner asserts that "the two metal materials 28 and 30 [of '810] are respectively the claimed 'a first member configured to support the pin; and a second member provided to surround the first member."' (Office Action, pages 5-6). However, '810 discloses that "the proximity pin 12 mounted in the hole 10...can be attached and detached" and only at a high temperature is "a part of the retaining member 18 [] adjusted so as to contact the body portion 16 of the proximity pin 12." ('810, middle of page 5 with reference to a fifth embodiment). Accordingly, '810 fails to disclose or teach "the pin coupled to an upper surface of the first member," as recited in amended claim 1. '104 fails to cure the deficiencies of '810.
Further, with regard to claim 2, the subject matter of which is incorporated into claim 1, Applicants do not agree that Fig. 1 of '104 has the dielectric-metal-insulating structure same as Applicants' FIG. 2, but particularly that Fig. 1 of '104 in combination with the thermal expansion relationship "discussed in claim 4" (i.e., the retaining member 18 and the proximity pin 12 of '810) (see Office Action, page 15) teaches the limitations of claim 2.
Conclusory statements alone are insufficient to support a rejection of obviousness; instead, the finding must be supported by a reasoned explanation with explicit reasoning and an articulated rationale. See in re Nuvasive, 842 F. 3d 1376, 1382-83. ("Our precedent dictates that the PTAB must make a finding of a motivation to combine when it is disputed. See, e.g., Lee, 277 F.3d at 1343-45; see also KSR, 550 U.S. at 418, 127 S.Ct. 1727 (stating that the PTAB's motivation to combine "analysis should be made explicit" (citation omitted)). Although identifying a motivation to combine "need not become [a] rigid and mandatory formula[]," KSR, 550 U.S. at 419, 127 S.Ct. 1727, the PTAB must articulate a reason why a PHOSITA would combine the prior art references."). The Examiner fails to provide any specific reason why a personal having ordinary skill in the art would have had any incentive to combine the cited references in the specific manner required by claim 2, for example.
The presently amended claims recite that "a pin is provided to move up or move down according to a difference in the amount of thermal deformation between the first member and the second member, wherein a movement direction of the pin...is a direction opposite to a direction in which the support plate is bent," '810 limits the movement of the pins to prevent them from coming off the support. Therefore, '810 teaches an opposing action with respect to the pins, in comparison to the claimed
invention. Accordingly, there would be no motivation to derive the pin behavior of the present application from '810.
For at least the reasons above, a prima facie case of obviousness cannot be established with regard to claim 1. A prima facie case of obviousness cannot be established with regard to claims 9 and 17 for at least analogous reasons. Consequently, a prima facie case of obviousness cannot be established with regard to claims 3-8, 11-16, and 19-20, at least by virtue of their respective dependencies from claims 1, 9, and 17. Accordingly, Applicants request the Examiner to reconsider and withdraw the above reaction.
CONCLUSION


CITED REFERENCE SUMMARIES: Ref US20080017104: Claims:
1. A substrate support assembly capable of holding and heating a substrate in a process chamber, the assembly comprising: 
(a) a ceramic puck comprising a substrate receiving surface and an opposing backside surface, the ceramic puck comprising (i) an electrode embedded in the ceramic puck to generate an electrostatic force to retain a substrate placed on the substrate receiving surface, and (ii) a heater embedded in the ceramic puck to heat the substrate;  (b) a coolant base comprising a coolant channel to circulate coolant therethrough, the channel comprising an inlet and terminus;  (c) a compliant layer bonding the ceramic puck to the coolant base, the compliant layer comprising at least one of (i) silicon having embedded aluminum fibers, or (ii) acrylic having an embedded wire mesh.
2. A support assembly according to claim 1 wherein the inlet and terminus of the coolant channel are adjacent to one another and the coolant channel loops back upon itself.
3. A support assembly according to claim 2 wherein the opposing backside surface of the ceramic puck comprises a plurality of spaced apart mesas, with first mesas adjacent to the inlet of the coolant channel and second mesas that being distal from the inlet of the coolant channel, and wherein: 
(i) the first mesas are spaced apart a first distance that is smaller than a second distance between the second mesas; or  (ii) the first mesas have a first contact area that is larger than a second contact area of the second mesas.
4. A support assembly according to claim 1 wherein the ceramic puck comprises a thickness of less than about 7 mm.
5. A support assembly according to claim 1 wherein the ceramic puck comprises a thickness of from about 4 to about 7 mm.
6. A support assembly according to claim 1 wherein the ceramic puck is composed of aluminum oxide.
7. A support assembly according to claim 6 wherein the electrodes and heater comprise tungsten or molybdenum.
8. A support assembly according to claim 1 where the heater comprises first and second coils that are radially spaced apart and concentric about one another, the first coil located at a peripheral portion of the ceramic puck and the second coil located at a central portion of the ceramic puck, and the first and second coils comprise a total resistance of less than 10 Ohms.
9. A support assembly according to claim 1 wherein the heater comprises a resistance of about 8.5 ohms.
10. A support assembly according to claim 1 wherein the heater comprises a coil having first loops spaced apart a first distance and second loops spaced apart a second distance that is greater than the first distance.
11. A support assembly according to claim 10 wherein the second loops are positioned about a lift pin hole in the ceramic.
12. An electrostatic chuck capable of holding and heating a substrate in a process chamber, the electrostatic chuck comprising: 
(a) a ceramic puck comprising a substrate receiving surface and an opposing backside surface, the ceramic puck comprising a thickness that is less than about 7 mm;  (b) an electrode embedded in the ceramic puck to generate an electrostatic force to retain a substrate placed on the substrate receiving surface, and  (c) a heater embedded in the ceramic puck to heat a substrate received on the substrate receiving surface.
13. An chuck according to claim 12 wherein the ceramic puck comprises a thickness of from about 4 to about 7 mm.
14. An chuck according to claim 12 wherein: 
(i) the ceramic puck is composed of aluminum oxide; and  (ii) the electrode and heater are composed of tungsten or molybdenum.
15. An chuck according to claim 1 wherein the opposing backside surface of the ceramic puck comprises a plurality of spaced apart mesas, with a first group of mesas and a second group of mesas, and wherein: 
(i) the first mesas are spaced apart a first distance that is smaller than a second distance between the second mesas; or  (ii) the first mesas have a first contact dimension that is larger than a second contact dimension of the second mesas.
16. A compliant layer for bonding a ceramic puck comprising an electrode and a heater to a coolant base comprising a coolant channel to circulate coolant therethrough, the compliant layer comprising at least one of: 
(a) silicon having embedded aluminum fibers, or  (b) acrylic having an embedded wire mesh.
17. A substrate processing apparatus comprising: 
(a) a process chamber comprising a substrate support mounted therein, the substrate support comprising: 
(i) a ceramic puck with an electrode and a heater; 
(ii) a base below the ceramic puck, the base comprising coolant channels; and 
(iii) a chiller to maintain a coolant at a preset temperature, the coolant provided to the channels of the base; 
 (b) a gas distributor to provide a process gas to the process chamber;  (c) a gas energizer to energize the process gas; and  (d) a gas exhaust port through which to exhaust the process gas from the chamber; and  (e) a controller comprising temperature control instruction sets that include code to (i) increase a coolant temperature in the chiller to a higher level prior to ramping up the power level applied to the heater in the ceramic puck, or (ii) decrease a coolant temperature in the chiller to a lower level prior to ramping down the power level applied to the heater in the ceramic puck, whereby the temperature of the substrate can be ramped up or down at a faster rate.
18. An apparatus according to claim 17 wherein the temperature control instruction sets include code to change a coolant temperature in the chiller to a higher level at least about 1 second before ramping up or ramping down the power level applied to the heater in the ceramic puck.
19. An apparatus according to claim 17 wherein the temperature control instruction sets include code to change the coolant temperature by at least about 10° C.
20. An apparatus according to claim 17 wherein the ceramic puck is bonded to the base by a compliant layer comprising at least one of (i) silicon having embedded aluminum fibers, or (ii) acrylic having an embedded wire mesh.
Ref JPH06333810: Claims:
【特許請求の範囲】[Claims] 【請求項１】 加熱源と、 前記加熱源上に配置され、その上面側に複数の孔を有する基板載置台と、 前記基板載置台に設けられた各孔に着脱自在であり、前記孔に装着された状態で、その頭部が前記基板搭載台の上面から突出し、熱処理対象となる基板を前記基板載置台から所定間隔だけ離れた上方位置で支持する基板支持部材と、 各孔の少なくとも一部に沿うように前記基板載置台に組み込まれ、温度上昇に伴って変形し、その一部が前記孔に装着された前記基板支持部材に接触して前記基板支持部材の動きを規制する抜け止め部材とを備えたことを特徴とする熱処理装置。1. A heating source, a substrate mounting table disposed on the heating source and having a plurality of holes on its upper surface side, and detachable to each hole provided in the substrate mounting table. In a mounted state, its head protrudes from the upper surface of the substrate mounting table and supports a substrate to be heat-treated at an upper position separated from the substrate mounting table by a predetermined distance, and at least one of the holes. A retainer that is incorporated in the substrate mounting table so as to follow the portion, deforms with a rise in temperature, and a part of the deformation contacts the substrate supporting member mounted in the hole to regulate the movement of the substrate supporting member. A heat treatment apparatus comprising: a member. 【請求項２】 前記抜け止め部材が、前記基板載置台を構成する材料の熱膨張率よりも大きな熱膨張率を有する材料からなる請求項１記載の熱処理装置。2. The heat treatment apparatus according to claim 1, wherein the retaining member is made of a material having a coefficient of thermal expansion larger than that of a material forming the substrate mounting table. 【請求項３】 前記抜け止め部材が、形状記憶材料からなり、加熱状態で前記基板支持部材と接触する形状に仕上げられた請求項１記載の熱処理装置。3. The heat treatment apparatus according to claim 1, wherein the retaining member is made of a shape memory material and is finished in a shape to be in contact with the substrate supporting member in a heated state. 【請求項４】 前記基板支持部材は、前記頭部から下方に伸び、前記孔に挿通自在な形状に仕上げられた胴部を備えており、温度上昇とともに前記抜け止め部材が変形して、前記胴部を締め付ける請求項１記載の熱処理装置。4. The substrate supporting member includes a body portion that extends downward from the head portion and is formed into a shape that can be inserted into the hole, and the retaining member is deformed as temperature rises. The heat treatment apparatus according to claim 1, wherein the body portion is tightened.
【請求項１】 加熱源と、 前記加熱源上に配置され、その上面側に複数の孔を有する基板載置台と、 前記基板載置台に設けられた各孔に着脱自在であり、前記孔に装着された状態で、その頭部が前記基板搭載台の上面から突出し、熱処理対象となる基板を前記基板載置台から所定間隔だけ離れた上方位置で支持する基板支持部材と、 各孔の少なくとも一部に沿うように前記基板載置台に組み込まれ、温度上昇に伴って変形し、その一部が前記孔に装着された前記基板支持部材に接触して前記基板支持部材の動きを規制する抜け止め部材とを備えたことを特徴とする熱処理装置。1. A heating source, a substrate mounting table disposed on the heating source and having a plurality of holes on its upper surface side, and detachable to each hole provided in the substrate mounting table. In a mounted state, its head protrudes from the upper surface of the substrate mounting table and supports a substrate to be heat-treated at an upper position separated from the substrate mounting table by a predetermined distance, and at least one of the holes. A retainer that is incorporated in the substrate mounting table so as to follow the portion, deforms with a rise in temperature, and a part of the deformation contacts the substrate supporting member mounted in the hole to regulate the movement of the substrate supporting member. A heat treatment apparatus comprising: a member.
【請求項２】 前記抜け止め部材が、前記基板載置台を構成する材料の熱膨張率よりも大きな熱膨張率を有する材料からなる請求項１記載の熱処理装置。2. The heat treatment apparatus according to claim 1, wherein the retaining member is made of a material having a coefficient of thermal expansion larger than that of a material forming the substrate mounting table.
【請求項３】 前記抜け止め部材が、形状記憶材料からなり、加熱状態で前記基板支持部材と接触する形状に仕上げられた請求項１記載の熱処理装置。3. The heat treatment apparatus according to claim 1, wherein the retaining member is made of a shape memory material and is finished in a shape to be in contact with the substrate supporting member in a heated state.
【請求項４】 前記基板支持部材は、前記頭部から下方に伸び、前記孔に挿通自在な形状に仕上げられた胴部を備えており、温度上昇とともに前記抜け止め部材が変形して、前記胴部を締め付ける請求項１記載の熱処理装置。4. The substrate supporting member includes a body portion that extends downward from the head portion and is formed into a shape that can be inserted into the hole, and the retaining member is deformed as temperature rises. The heat treatment apparatus according to claim 1, wherein the body portion is tightened.
Ref KR20200052568: Claims:
A pin-shaped support portion protruding from the seating surface to support the substrate; And A wide surface is disposed parallel to the seating surface, and includes a bar-shaped support portion supporting the edge of the substrate, At least one of the pin-shaped support portion and the bar-shaped support portion transmits a force to the substrate in a direction perpendicular to the seating surface, thereby lifting the substrate. The chuck is a substrate processing apparatus including a cooling flow path that provides a circulation passage of a cooling fluid for cooling the substrate. The pin-shaped support and the bar-shaped support are substrate processing devices that transmit force to the substrate using a dielectric elastomer that is deformed by the input electricity. The pin-shaped support portion, Upper and lower electrode plates provided inside the chuck, receiving electricity, and deformable; A support pin coupled to the upper electrode plate and partially exposed to an upper portion of the seating surface to support the substrate; And A substrate processing apparatus provided between the upper and lower electrode plates and including a deformable variable plate. The variable plate is a substrate processing apparatus comprising an elastomer. The upper electrode plate, the variable plate and the lower electrode plate are stacked in a direction parallel to the vertical direction of the seating surface, When electricity is input through the upper and lower electrode plates, a substrate processing apparatus in which a combination of the upper electrode plate, the variable plate, and the lower electrode plate is compressed in a direction parallel to the vertical direction of the seating surface. The bar-shaped support portion, Upper and lower electrode bars capable of receiving electricity and being deformable; A reference bar coupled to the upper electrode bar and supporting the substrate on another surface not coupled to the upper electrode bar; And A substrate processing apparatus provided between the upper and lower electrode bars and including a deformable variable bar. The variable bar is a substrate processing apparatus comprising an elastomer. The reference bar, the upper electrode bar, the variable bar and the lower electrode bar are stacked in a direction parallel to the vertical direction of the seating surface, When electricity is input through the upper and lower electrode bars, the reference bar, the upper electrode bar, the combination of the variable bar and the lower electrode bar are substrate processing devices that are bent in the direction of the reference bar. It is arranged to surround the circumference of the chuck, further comprising a substrate guide supporting the edge of the substrate seated on the seating surface so that the center of the substrate and the center of the chuck coincide, The bar-shaped support unit has one end coupled to the substrate guide, and the other end supporting the substrate. It includes a bar-shaped support portion formed to protrude from the seating surface to support the pin-shaped support portion for supporting the substrate, The pin-shaped support unit is a substrate processing apparatus for elevating the substrate by transmitting a force to the substrate in a direction perpendicular to the seating surface using a dielectric elastomer that is deformed by input electricity. A wide surface is disposed parallel to the seating surface, and includes a bar-shaped support portion supporting the edge of the substrate, The bar-shaped support unit is a substrate processing apparatus for elevating the substrate by transmitting a force to the substrate in a direction perpendicular to the seating surface using a dielectric elastomer that is deformed by input electricity.
A pin-shaped support portion protruding from the seating surface to support the substrate; And A wide surface is disposed parallel to the seating surface, and includes a bar-shaped support portion supporting the edge of the substrate, At least one of the pin-shaped support portion and the bar-shaped support portion transmits a force to the substrate in a direction perpendicular to the seating surface, thereby lifting the substrate.
The chuck is a substrate processing apparatus including a cooling flow path that provides a circulation passage of a cooling fluid for cooling the substrate.
The pin-shaped support and the bar-shaped support are substrate processing devices that transmit force to the substrate using a dielectric elastomer that is deformed by the input electricity.
The pin-shaped support portion, Upper and lower electrode plates provided inside the chuck, receiving electricity, and deformable; A support pin coupled to the upper electrode plate and partially exposed to an upper portion of the seating surface to support the substrate; And A substrate processing apparatus provided between the upper and lower electrode plates and including a deformable variable plate.
The variable plate is a substrate processing apparatus comprising an elastomer.
The upper electrode plate, the variable plate and the lower electrode plate are stacked in a direction parallel to the vertical direction of the seating surface, When electricity is input through the upper and lower electrode plates, a substrate processing apparatus in which a combination of the upper electrode plate, the variable plate, and the lower electrode plate is compressed in a direction parallel to the vertical direction of the seating surface.
The bar-shaped support portion, Upper and lower electrode bars capable of receiving electricity and being deformable; A reference bar coupled to the upper electrode bar and supporting the substrate on another surface not coupled to the upper electrode bar; And A substrate processing apparatus provided between the upper and lower electrode bars and including a deformable variable bar.
The variable bar is a substrate processing apparatus comprising an elastomer.
The reference bar, the upper electrode bar, the variable bar and the lower electrode bar are stacked in a direction parallel to the vertical direction of the seating surface, When electricity is input through the upper and lower electrode bars, the reference bar, the upper electrode bar, the combination of the variable bar and the lower electrode bar are substrate processing devices that are bent in the direction of the reference bar.
It is arranged to surround the circumference of the chuck, further comprising a substrate guide supporting the edge of the substrate seated on the seating surface so that the center of the substrate and the center of the chuck coincide, The bar-shaped support unit has one end coupled to the substrate guide, and the other end supporting the substrate.
It includes a bar-shaped support portion formed to protrude from the seating surface to support the pin-shaped support portion for supporting the substrate, The pin-shaped support unit is a substrate processing apparatus for elevating the substrate by transmitting a force to the substrate in a direction perpendicular to the seating surface using a dielectric elastomer that is deformed by input electricity.
A wide surface is disposed parallel to the seating surface, and includes a bar-shaped support portion supporting the edge of the substrate, The bar-shaped support unit is a substrate processing apparatus for elevating the substrate by transmitting a force to the substrate in a direction perpendicular to the seating surface using a dielectric elastomer that is deformed by input electricity.