Office Action 1: Notice of Allowance (2025-05-22)

CLAIMS:
CLAIMS:

claims, wherein a relative intensity of the first luminescent material emission (211) and the

claims, wherein a relative intensity of the first luminescent material emission (211) and the

second luminescent material emission (221) depends on one or more of (i) an operation timeof the first light generating device (110), and (ii) a control mode of a control system (300)configured to control the first light generating device (110) and optional controllable optics;and wherein in a first operational mode of the system (1000), a radiant flux of the firstluminescent material emission (211) is higher than a radiant flux of the second luminescentmaterial emission (221), and wherein in a second operational mode of the system (1000) aradiant flux of the first luminescent material emission (211) is lower than a radiant flux of thesecond luminescent material emission (221).

claims, comprising a first laser arrangement (2150) comprising a first laser cavity and a first

crystal comprising the first luminescent material emission (211), wherein the first crystal isconfigured within the first laser cavity; wherein the first laser arrangement (2150) comprises a first reflector (2151) and a second reflector (2152), wherein the first reflector (2151) isarranged upstream of the first crystal and wherein the second reflector (2152) is arrangeddownstream of the first crystal, wherein the first reflector (2151) is light transmissive for the first device light (111) and reflective for the line emission at a first wavelength XL,1, wherein the second reflector (2152) is reflective for the first device light (111) and partially reflective for the line emission at a first wavelength XL,1; wherein the first laser arrangement (2150) isconfigured to generate first laser light (2101) comprising the line emission at a firstwavelength XL,1, wherein the first laser light (2101) downstream of the second reflector(2152) comprises at least part of the first luminescent material emission (211) and has a firstcentroid wavelength XLC,1, wherein |XLC,1 - nm.

claims, wherein the line absorber and line emitter luminescent material is selected from (a)

ALnF4:Tb", wherein A is selected from the group of Li, Na, and K, and wherein Ln isselected from the group of Y, La, Gd, and Lu, and (b) Mlo.7Lno.3M2o.3Aln. wherein

claims, wherein the broad band emitter luminescent material comprises one or more of

MS:Eu2 M2SisNs:Eu2 MAlSiN3:Eu2 and Ca2AlSi302Ns:Eu2+, wherein M comprises oneor more of Ba, Sr, and Ca, especially in embodiments at least Sr.

claims, wherein the first light generating device (110) is configured to generate blue first

device light (111); wherein the system light (1001) comprises the first device light (111), thefirst luminescent material emission (211), and the second luminescent material emission(221).

claims, further comprising a second source of light (1200), wherein the second source of light

(1200) is configured to generate second light (1201), having a spectral power distributiondifferent from (a) the first device light (111), (b) the first luminescent material emission (211), and (c) the second luminescent material emission (221); wherein the system light(1001) comprises (a) one or more of the first device light (111) and the second light (1201),and (b) one or more of the first luminescent material emission (211) and the secondluminescent material emission (221).

claims, wherein one or more of the third luminescent material (230) and the fourth

luminescent material (240) comprises a luminescent material of the type A3BsOn:Ce,wherein A comprises one or more of Y, La, Gd, Tb and Lu, and wherein B comprises one ormore of Al, Ga, In and Sc.

claims, wherein the system light (1001) is white light and has correlated color temperature

selected from a range from 1800 K to 12000 K, and a color rendering index of at least 70.

claims, wherein the light generating system (1000) further comprises a second optical

element (420) configured between the first luminescent material (210) and the secondluminescent material (220), wherein the second optical element (420) is either transmissivefor the first device light (111) and reflective for the first luminescent material emission (211), or reflective for the first device light (111) and transmissive for the first luminescent material emission (211); and wherein the first device light (111) the first luminescent material (210),the second luminescent material (220), and the second optical element (420) are configuredsuch that at least part of the first device light (111) not absorbed by the first luminescentmaterial (210) propagates to the second luminescent material (220).

claims, further comprising a sensor (320) and a control system (300), wherein the sensor

(320) is configured to sense an intensity of one or more of (a) the first luminescent material emission (211) downstream of the first luminescent material (210), (b) the first device light(111) downstream of the first luminescent material (210), (c) the second luminescent material emission (221) downstream of the second luminescent material (220), (d) the first devicelight (111) downstream of the second luminescent material (220), and generate a relatedsensor signal, wherein the control system (300) is configured to control the first lightgenerating device (110) in dependence of the sensor signal.

1\. A light generating system (1000) comprising a first light generating device (100), a first luminescent material (210), and a second luminescent material (220), wherein:- the first light generating device (110) is configured to generate first device light (111), wherein the first light generating device (110) comprises a first light source (10)
selected from the group of a superluminescent diode and a laser;- the first luminescent material (210) comprises a line absorber and line emitter luminescent material providing a first luminescent material emission (211) comprising a line emission at a first wavelength XL,1 upon excitation with the first device light (111);- the second luminescent material (220) comprises a broad band emitter luminescent material providing a second luminescent material emission (221) comprising a broad band emission upon excitation with the first device light (111), wherein the second luminescent material emission (221) has a second centroid wavelength XLC,2, wherein 1L,1 - nm;SVG {EMBED HERE} 0.1530.583- the first light generating device (110) is configured to pump one or more of the
first luminescent material (210) and the second luminescent material (220) with the first device light (111); and- the light generating system (1000) is configured to generate system light (1001) comprising one or more of the first luminescent material emission (211) and the second luminescent material emission (221).
2\. The light generating system (1000) according to claim 1, wherein the second luminescent material (220) is configured downstream of the first luminescent material (210);wherein at room temperature (i) the line emission at a first wavelength XL,1 has a full width half maximum linewidth selected from the range of SVG {EMBED HERE} 0.1170.087 20 nm, and (ii) the broad band
emission has a full width half maximum bandwidth of > 40 nm; and wherein the first light source (10) comprises a laser.
3\. The light generating system (1000) according to any one of the preceding

second luminescent material emission (221) depends on one or more of (i) a spectral power distribution of the first device light (111), and (ii) a temperature of the first luminescent material (210).SVG {EMBED HERE} 0.1670.623

4\. The light generating system (1000) according to any one of the preceding

5\. The light generating system (1000) according to any one of the preceding

6\. The light generating system (1000) according to any one of the precedingSVG {EMBED HERE} 0.1530.583

M1 is selected from the group of Ca, Sr, and Ba, wherein Ln is selected from the group of Y,

La, Gd, and Lu, and wherein M2 is selected from the group of Mg and Ca.

7\. The light generating system (1000) according to any one of the preceding

8\. The light generating system (1000) according to any one of the preceding

9\. The light generating system (1000) according to any one of the preceding

SVG {EMBED HERE} 0.1670.147SVG {EMBED HERE} 0.1670.147SVG {EMBED HERE} 0.1670.14710. The light generating system (1000) according to claim 9, wherein the second
source of light (1200) comprises one or more of: (A) a second light generating device (120) comprising one or more of a superluminescent diode and a laser, wherein the second light generating device (120) is configured to generate second device light (121), wherein the second light (1201) comprises the second device light (121); (B) a third luminescent material (230) configured to convert part of the first device light (111) into third luminescent material light (231), wherein the second light (1201) comprises the third luminescent material light (231); and (C) a fourth luminescent material (240) and a second light source (20) selected from the group of a superluminescent diode and a laser; wherein the second light source (20) is configured to generate second light source light (21); wherein the fourth luminescent material (240) is configured to convert at least part of the second light source light (21) into

fourth luminescent material light (241); wherein the second light (1201) comprises the fourth luminescent material light (241).
11\. The light generating system (1000) according to any one of the preceding

12\. The light generating system (1000) according to any one of the preceding
13\. The light generating system (1000) according to any one of the preceding

14\. The light generating system (1000) according to any one of the preceding

15\. A lighting device (1300) selected from the group of a lamp (1), a luminaire (2), a projector device (3), and an optical wireless communication device, comprising the light generating system (1000) according to any one of the preceding claims. 5 10 15 20 25 30

OFFICE ACTION:
DETAILED ACTION
Notice of Pre-AIA  or AIA  Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Allowable Subject Matter
Claims 1-15 are allowed.
With respect to claims 1-15, the prior art does not teach or suggest the first luminescent material comprises a line absorber and line emitter luminescent material providing a first luminescent material emission comprising a line emission at a first wavelength XL,1 upon excitation with the first device light; the second luminescent material comprises a broad band emitter luminescent material providing a second luminescent material emission comprising a broad band emission upon excitation with the first device light, wherein the second luminescent material emission has a second centroid wavelength XLC,2, wherein IXL,1-XLC,21 20 nm;- the first light generating device is configured to pump one or more of the first luminescent material and the second luminescent material with the first device light; and the light generating system is configured to generate system light comprising one or more of the first luminescent material emission and the second luminescent material emission; along with the other limiting elements of claim 1.
Conclusion
The prior art made of record and not relied upon is considered pertinent to applicant's disclosure:
Narendran et al. (7,703,942)
Soules et al. (6,580,097)
Soules et al. (6,252,254)



CITED REFERENCE SUMMARIES: Ref US7703942B2: Claims:
A light emitting apparatus comprising: a radiation source for emitting short wavelength radiation; an optic device configured to receive short wavelength radiation emitted from the radiation source; a device for directing at least some of the short wavelength radiation emitted from the radiation source into the optic device; a first portion of the optic device having at least one aperture positioned to allow transfer of at least some of the short wavelength radiation emitted from the radiation source into the optic device; and a down conversion material receiving at least some of the short wavelength radiation directed into the optic device in one spectral region and emitting at least some of the received radiation in at least one other spectral region.
a radiation source for emitting short wavelength radiation;
an optic device configured to receive short wavelength radiation emitted from the radiation source;
a device for directing at least some of the short wavelength radiation emitted from the radiation source into the optic device;
a first portion of the optic device having at least one aperture positioned to allow transfer of at least some of the short wavelength radiation emitted from the radiation source into the optic device; and
a down conversion material receiving at least some of the short wavelength radiation directed into the optic device in one spectral region and emitting at least some of the received radiation in at least one other spectral region.
The light emitting apparatus of claim 1 , wherein the radiation source includes at least one of a light emitting diode (LED), a laser diode (LD), or a resonant cavity light emitting diode (RCLED).
The light emitting apparatus of claim 1 , wherein the short wavelength radiation source includes at least one of a light emitting diode (LED), a laser diode (LD), or a resonant cavity light emitting diode (RCLED) and the device for directing at least some of the radiation emitted from the source is one of a lens, a GRIN lens, a micro lens, or a ball lens.
The light emitting apparatus of claim 1 , wherein the down conversion material includes one of a phosphor or other material for converting at least some of the received light into forward transferred light and back transferred radiation.
The light emitting apparatus of claim 1 , wherein the down conversion material includes non down converting scattering particles.
The light emitting apparatus of claim 1 , wherein the radiation source is disposed outside the optic device.
The light emitting apparatus of claim 1 , wherein the device for directing at least some of the short wavelength radiation emitted from the radiation source is disposed outside the optic device.
The light emitting apparatus of claim 1 , wherein the radiation source and the device for directing at least some of the radiation emitted from the radiation source are disposed outside the optic device.
The light emitting apparatus of claim 1 , wherein the device for directing at least some of the short wavelength and down converted radiation is disposed between the radiation source and the optic device.
The light emitting apparatus of claim 1 , further including a reflector disposed around at least a portion of the optic device.
The light emitting apparatus of claim 1 , wherein a geometric shape of the optic device includes one of a cone, sphere, hyperbola, parabola, ellipse, pyramid or box shape.
The light emitting apparatus of claim 1 , wherein radiation inside the optic device includes at least one of back transferred radiation from the down conversion material, radiation from the radiation source and radiation emitted, scattered and/or reflected within the optic device and wherein the optic device is adapted to extract radiation from inside the optic device to outside of the optic device.
The light emitting apparatus of claim 12 , further comprising a collecting device for collecting light extracted to outside of the optic device.
The light emitting apparatus of claim 13 , wherein the collecting device includes a reflector disposed around at least a portion of the optic device.
The light emitting apparatus of claim 1 , wherein the radiation source is disposed adjacent a first portion of the optic device.
The light emitting apparatus of claim 15 , wherein the radiation source is disposed inside at least one reflector.
The light emitting apparatus of claim 16 , wherein a shape of the at least one reflector is one of concave, parabolic, or flat.
The light emitting apparatus of claim 16 , wherein the radiation source is a light emitting diode and a shape of the at least one reflector is substantially parabolic.
The light emitting apparatus of claim 15 , wherein the down conversion material is disposed adjacent a second portion of the optic device.
The light emitting apparatus of claim 15 , wherein the down conversion material is disposed adjacent a second end of the optic device and further comprising a diffuser layer disposed at least one of adjacent a first side of the down conversion material or adjacent a second side of the down conversion material.
The light emitting apparatus of claim 15 , wherein the down conversion material is disposed adjacent a second portion of the optic device and further comprising a first diffuser layer disposed adjacent a first side of the down conversion material and a second diffuser layer disposed adjacent a second side of the down conversion material.
The light emitting apparatus of claim 15 , wherein an inside surface at the first portion of the optic device is a reflective surface.
The light emitting apparatus of claim 22 , further comprising one of a plurality of bumps or a plurality of conical sections on the reflective surface of the optic device.
The light emitting apparatus of claim 1 wherein the radiation source comprises a source for emitting multi-colored light.
The light emitting apparatus of claim 1 , wherein the radiation source comprises a plurality of light emitting sources, each of the light emitting sources exhibiting a spectrum different than a spectrum of at least some of the other light emitting sources.
A light emitting apparatus comprising: a radiation source for emitting short wavelength radiation, the radiation source including a plurality of semiconductor light emitters, including at least one of a light emitting diode (LED), a laser diode (LD), or a resonant cavity light emitting diode (RCLED); an optic device configured to receive short wavelength radiation emitted from the plurality of semiconductor light emitters; a device for directing at least some of the short wavelength radiation emitted from the plurality of semiconductor light emitters into the optic device; a first portion of the optic device has a plurality of apertures positioned to allow transfer of at least some of the short wavelength radiation from the plurality of semiconductor light emitters into the optic device; a down conversion material receiving at least some of the short wavelength radiation directed into the optic device in one spectral region and emitting at least some of the received radiation in at least one other spectral region.
a radiation source for emitting short wavelength radiation, the radiation source including a plurality of semiconductor light emitters, including at least one of a light emitting diode (LED), a laser diode (LD), or a resonant cavity light emitting diode (RCLED);
an optic device configured to receive short wavelength radiation emitted from the plurality of semiconductor light emitters;
a device for directing at least some of the short wavelength radiation emitted from the plurality of semiconductor light emitters into the optic device;
a first portion of the optic device has a plurality of apertures positioned to allow transfer of at least some of the short wavelength radiation from the plurality of semiconductor light emitters into the optic device;
The light emitting apparatus of claim 26 , wherein a plurality of lenses direct the short wavelength radiation from respective semiconductor light emitters through respective apertures.
The light emitting apparatus of claim 27 , wherein respective semiconductor light emitters are aligned with respective lenses and apertures or transparent areas.
The light emitting apparatus of claim 26 , wherein respective semiconductor light emitters are disposed one of inside or on respective ones of a plurality of reflectors.
The light emitting apparatus of claim 26 , wherein the plurality of semiconductor light emitters are disposed outside the optic device.
The light emitting apparatus of claim 26 , wherein the device for directing at least some of the light emitted from the plurality of semiconductor light emitters is disposed between the plurality of semiconductor light emitters and the optic device.
The light emitting apparatus of claim 31 wherein the device for directing at least some of the light from the plurality of semiconductor light emitters is a micro lens layer.
A light emitting apparatus comprising: a radiation source for emitting multi-colored radiation; an optic device configured to receive at least a portion of the multi-colored radiation emitted by the radiation source; a device for directing at least some of the multi-colored radiation emitted by the radiation source into the optic device; a first portion of the optic device having at least one aperture positioned to allow transfer of at least some of the multi-colored radiation emitted from the radiation source into the optic device; and a diffuser material coupled to the optic device receiving at least some of the multi-colored radiation and converting the received multi-colored radiation into forward transferred radiation and back transferred radiation, wherein the optic device is configured to extract at least a portion of the back transferred radiation from the optic device.
a radiation source for emitting multi-colored radiation;
an optic device configured to receive at least a portion of the multi-colored radiation emitted by the radiation source;
a device for directing at least some of the multi-colored radiation emitted by the radiation source into the optic device;
a first portion of the optic device having at least one aperture positioned to allow transfer of at least some of the multi-colored radiation emitted from the radiation source into the optic device; and
a diffuser material coupled to the optic device receiving at least some of the multi-colored radiation and converting the received multi-colored radiation into forward transferred radiation and back transferred radiation,
wherein the optic device is configured to extract at least a portion of the back transferred radiation from the optic device.
The light emitting apparatus of claim 33 , wherein the radiation source comprises a plurality of light emitting sources, each of the light emitting sources exhibiting a spectrum different than a spectrum of at least one of the other light emitting sources.
The light emitting apparatus of claim 33 wherein the diffuser material is at least one of a diffuser, a down conversion material, and a microlens.
Ref US6580097B1: Claims:
A phosphor composition which absorbs radiation having a first spectrum and emits radiation having a second spectrum, the phosphor composition comprising:
at least one of:
YBO 3 :Ce 3+ ,Tb 3+ ;
BaMgAl 10 O 17 :Eu 2+ ,Mn 2+ ;
(Sr,Ca,Ba)(Al,Ga) 2 S 4 :Eu 2+ ; and
Y 3 Al 5 O 12 âCe 3+ ; and
Y 2 O 2 S:Eu 3+ , Bi 3+ ;
YVO 4 :Eu 3+ ,Bi 3+ ;
SrY 2 S 4 :Eu 2+ ;
CaLa 2 S 4 :Ce 3+ ; and
(Ca,Sr)S:Eu 2+ .
The phosphor composition of claim 1 , wherein the phosphor composition comprises (Sr,Ca,Ba)(Al,Ga) 2 S 4 :Eu 2+ ; and (Ca,Sr)S:Eu 2+ .
The phosphor composition of claim 1 , wherein the phosphor composition comprises Y 3 Al 5 O 12 âCe 3+ and SrS:Eu 2 +.
The phosphor composition of claim 1 , wherein the phosphor composition comprises at least one of Y 2 O 2 S:Eu 3+ ,Bi 3+ and YVO 4 :EU 3+ ,Bi 3+ .
The phosphor composition of claim 4 , wherein the phosphor composition comprises YBO 3 :Ce 3+ ,Tb 3+ .
The phosphor composition of claim 1 , wherein the first spectrum includes blue light.
The phosphor composition of claim 6 wherein the blue light has an emission peak between about 450 nm and about 470 nm.
The phosphor composition of claim 1 , wherein the second spectrum includes a first component having an emission peak at about 570-590 nm and a second component having an emission peak at about 600-650 nm.
The phosphor composition of claim 1 , wherein the second spectrum includes a first component having an emission peak at about 540-550 nm and a second component having an emission peak at about 610-615 nm.
A lamp comprising:
a blue light-emitting laser diode; and
a phosphor composition which absorbs radiation having a first spectrum from the blue light-emitting laser diode and emits radiation having a second spectrum, the phosphor composition comprising:
BaMaAl 10 O 17 :Eu 2+ ,Mn 2+ ;
Y 2 O 2 S: Eu 3+ ,Bi 3+ ;
The lamp of claim 10 , wherein the phosphor composition comprises (Sr,Ca,Ba)(Al,Ga) 2 S 4 :Eu 2+ ; and (Ca,Sr)S:Eu 2+ .
The lamp of claim 10 , wherein the phosphor composition comprises Y 3 Al 5 O 12 âCe 3+ and SrS:Eu 2+ .
The lamp of claim 10 , wherein the phosphor composition comprises at least one of Y 2 O 2 S:Eu 3+ ,Bi 3+ and YVO 4 :Eu 3+ ,Bi 3+ .
The lamp of claim 10 , wherein the phosphor composition comprises YBO 3 :Ce 3+ ,Tb 3+ .
A method for producing white light comprising the steps of:
generating light from a blue light-emitting laser diode;
directing the light to a phosphor composition comprising:
Y 2 O 2 S:EU 3+ ,Bi 3+ ;
YVO 4 : Eu 3+ ,Bi 3+ ;
A light-emitting device comprising a blue light-emitting laser diode covered with a phosphor-containing covering, the phosphor-containing covering containing a green-emitting phosphor and a red-emitting phosphor, the green and red-emitting phosphors being excitable by said blue light-emitting laser diode, the green and red-emitting phosphors each having a full width half maximum value of less than 60.
The light emitting device of claim 16 , wherein the green emitting phosphor has a peak emission at about 510-560 nm, and the red emitting phosphor has a peak emission at about 600-630 nm.
The light emitting device of claim 16 , wherein the red emitting phosphor has a full width half maximum value of less than about 5 nm.
The light emitting device of claim 18 , wherein the red emitting phosphor comprises at least one of Y 2 O 2 S:Eu 3+ ,Bi 3+ and YVO 4 :EU 3+ ,Bi 3+ .
A light emitting device comprising:
a blue light-emitting LED; and
a phosphor composition comprising SrS:Eu 2+ ,Ce 3+ ,K + ; said phosphor composition being disposed to absorb at least a portion of light emitted by said blue light-emitting LED and to emit light having a spectrum other than that emitted by said blue light-emitting LED.
The light emitting device of claim 20 , wherein the blue LED has a peak emission between about 425 nm and about 430 nm.