Office Action 1: Notice of Allowance (2025-04-25)

CLAIMS:
WHAT IS CLAIMED IS:

1\. A semiconductor device comprising:
a first semiconductor element comprising a first face and a second face opposite to
the first face, wherein a first electrode is provided in the first face and a second electrode is provided in the second face;
a second semiconductor element comprising a third face and a fourth face opposite to the third face, wherein a third electrode is provided in the third face and a fourth electrode is provided in the fourth face;
an insulating base member comprising a fifth face and a sixth face opposite to the fifth face, wherein the first face of the first semiconductor element and the third face of the second semiconductor element are adhesively bonded to the fifth face;
a first wiring that penetrates through the insulating base member to be electrically connected to the first electrode, and that is disposed on the sixth face of the insulating base
member;
a second wiring that penetrates through the insulating base member to be electrically connected to the third electrode, and that is disposed on the sixth face of the insulating base member;
a first wiring member that faces the second face of the first semiconductor element,
and that is electrically connected to the second electrode; and
a second wiring member electrically connected to the second wiring and comprising a seventh face and an eighth face opposite to the seventh face, wherein the seventh face of the second wiring member faces the sixth face of the insulating base member, wherein:
the second wiring member is bonded to both the first wiring and the second wiring in a state where the insulating base member is folded;
the first wiring member and the second wiring member face each other, and are electrically connected to each other; and
a current flows in a first direction in the first wiring member, and flows in a second
direction opposite to the first direction in the second wiring member.

2\. The semiconductor device according to Claim 1, wherein:
the first wiring member is electrically connected to the second wiring member through the first semiconductor element, the first wiring, the second semiconductor element
and the second wiring.

3\. The semiconductor device according to Claim 1, wherein:
the insulating base member has flexibility.

4\. The semiconductor device according to Claim 1, further comprising:
a first electrically conductive adhesive layer that bonds the first wiring member and the second electrode to each other; and
a second electrically conductive adhesive layer that bonds the second wiring member and the second wiring to each other.

5\. The semiconductor device according to Claim 1, further comprising:
a first insulating adhesive layer that bonds the second wiring member and the first wiring to each other.

6\. The semiconductor device according to Claim 1, wherein:
the first wiring member comprises a first lead terminal; and
the second wiring member comprises a second lead terminal.

7\. The semiconductor device according to Claim 1, wherein:
the first wiring member comprises a first wiring substrate; and
the second wiring member comprises a second wiring substrate.

8\. The semiconductor device according to Claim 1, further comprising:
an electrically conductive member that is adhesively bonded to the fifth face; and
a third wiring member that is provided on the fourth face of the second semiconductor element to be electrically connected to the electrically conductive member and the fourth electrode, wherein the first wiring penetrates through the insulating base member to be electrically connected to the electrically conductive member.

9\. The semiconductor device according to Claim 8, further comprising:
a third electrically conductive adhesive layer that bonds the third wiring member and the electrically conductive member to each other; and
a fourth electrically conductive adhesive layer that bonds the third wiring member
and the fourth electrode to each other.

10\. The semiconductor device according to Claim 8, wherein:
the third wiring member comprises a third lead terminal.

11\. The semiconductor device according to Claim 8, wherein:
the third wiring member comprises a third wiring substrate.

12\. The semiconductor device according to Claim 1, wherein:
the first semiconductor element further comprises a fifth electrode provided in the
first face;
the second semiconductor element further comprises a sixth electrode provided in the third face; and
the semiconductor device further comprises:
a third wiring that penetrates through the insulating base member to be electrically
connected to the fifth electrode, and that is disposed on the sixth face of the insulating base member; and
a fourth wiring that penetrates through the insulating base member to be electrically connected to the sixth electrode, and that is disposed on the sixth face of the insulating base member.

13\. The semiconductor device according to Claim 1, further comprising:
a second insulating adhesive layer that is provided on the fifth face of the insulating base member.

14\. The semiconductor device according to Claim 13, wherein:
the second insulating adhesive layer comprises:
a first adhesive portion that adhesively bonds the first semiconductor element to the fifth face, and
a second adhesive portion that adhesively bonds the second semiconductor element
to the fifth face;
the fifth face is exposed from the second insulating adhesive layer between the first adhesive portion and the second adhesive portion; and
the insulating base member is folded between the first adhesive portion and the second adhesive portion. 5 10 15 20 25 30 35

OFFICE ACTION:
Notice of Pre-AIA  or AIA  Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Information Disclosure Statement
The references listed in the Information Disclosure Statement (IDS) filed on 11/09/2022, and 04/27/2023 have been considered by the examiner (see attached PTO-1449 or PTO/SB/08A and 08B forms).
This Application was searched, https://iq.ip.com/discover, in view of the limitations of the claimed invention. The search was ineffective.
Applicant’s submitted prior art (Lee et al. KR 20180023365 A) appears to be the closest reference.
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Lee et al. teaches in Fig. 5, A semiconductor device(or power module) comprising: a first semiconductor element (108) comprising a first face (or first side) and a second face (second side) opposite to the first face; a second semiconductor element (118) comprising a third face (third side) and a fourth face (fourth side) opposite to the third face; and a first wiring (104a) penetrates through the insulating base member (160). Lee et al. fails to teach, for example, wherein a first electrode is provided in the first face and a second electrode is provided in the second face, a third electrode is provided in the third face and a fourth electrode is provided in the fourth face; and  wherein the first face of the first semiconductor element and the third face of the second semiconductor element are adhesively bonded to the fifth face”, and further limitations set forth in claim 1.
The reference of interest cited (PTO 892) is related to a semiconductor device (e.g., power module) that capable of reducing inductance.
Claims 1-14 are allowed.
The following is an examiner’s statement of reasons for allowance: please see para [0004].
Any comments considered necessary by applicant must be submitted no later than the payment of the issue fee and, to avoid processing delays, should preferably accompany the issue fee.  Such submissions should be clearly labeled “Comments on Statement of Reasons for Allowance.”
Telephone Inquiry Contacts



CITED REFERENCE SUMMARIES: Ref US20230145182A1: Claims:
A semiconductor device comprising: a first semiconductor element comprising a first face and a second face opposite to the first face, wherein a first electrode is provided in the first face and a second electrode is provided in the second face; a second semiconductor element comprising a third face and a fourth face opposite to the third face, wherein a third electrode is provided in the third face and a fourth electrode is provided in the fourth face; a first insulating base member comprising a fifth face adhesively bonded to the first face of the first semiconductor element, and a sixth face opposite to the fifth face; a first wiring that penetrates through the first insulating base member to be electrically connected to the first electrode, and that is disposed on the sixth face of the first insulating base member; a second insulating base member comprising a seventh face adhesively bonded to the third face of the second semiconductor element, and an eighth face opposite to the seventh face; a second wiring that penetrates through the second insulating base member to be electrically connected to the third electrode, and that is disposed on the eighth face of the second insulating base member; a first wiring member that is electrically connected to the second electrode of the first semiconductor element; a second wiring member that faces the sixth face of the first insulating base member, and that is electrically connected to the first wiring and the fourth electrode of the second semiconductor element; and a third wiring member that faces the eighth face of the second insulating base member, and that is electrically connected to the second wiring, wherein: the first wiring member and the third wiring member face each other, and are electrically connected to each other; and a current flows in a first direction in the first wiring member, and flows in a second direction opposite to the first direction in the third wiring member.
a first semiconductor element comprising a first face and a second face opposite to the first face, wherein a first electrode is provided in the first face and a second electrode is provided in the second face;
a second semiconductor element comprising a third face and a fourth face opposite to the third face, wherein a third electrode is provided in the third face and a fourth electrode is provided in the fourth face;
a first insulating base member comprising a fifth face adhesively bonded to the first face of the first semiconductor element, and a sixth face opposite to the fifth face;
a first wiring that penetrates through the first insulating base member to be electrically connected to the first electrode, and that is disposed on the sixth face of the first insulating base member;
a second insulating base member comprising a seventh face adhesively bonded to the third face of the second semiconductor element, and an eighth face opposite to the seventh face;
a second wiring that penetrates through the second insulating base member to be electrically connected to the third electrode, and that is disposed on the eighth face of the second insulating base member;
a first wiring member that is electrically connected to the second electrode of the first semiconductor element;
a second wiring member that faces the sixth face of the first insulating base member, and that is electrically connected to the first wiring and the fourth electrode of the second semiconductor element; and
a third wiring member that faces the eighth face of the second insulating base member, and that is electrically connected to the second wiring,
the first wiring member and the third wiring member face each other, and are electrically connected to each other; and
a current flows in a first direction in the first wiring member, and flows in a second direction opposite to the first direction in the third wiring member.
The semiconductor device according to claim 1 , further comprising: a first electrically conductive adhesive layer that bonds the first wiring member and the second electrode to each other; and a second electrically conductive adhesive layer that bonds the third wiring member and the second wiring to each other.
a first electrically conductive adhesive layer that bonds the first wiring member and the second electrode to each other; and
a second electrically conductive adhesive layer that bonds the third wiring member and the second wiring to each other.
The semiconductor device according to claim 1 , wherein: the first wiring member has a first lead terminal; and the third wiring member has a second lead terminal.
the first wiring member has a first lead terminal; and
the third wiring member has a second lead terminal.
The semiconductor device according to claim 1 , wherein: the first wiring member comprises a first wiring substrate; and the third wiring member comprises a second wiring substrate.
the first wiring member comprises a first wiring substrate; and
the third wiring member comprises a second wiring substrate.
The semiconductor device according to claim 1 , further comprising: a third electrically conductive adhesive layer that bonds the second wiring member and the first wiring to each other; and a fourth electrically conductive adhesive layer that bonds the second wiring member and the fourth electrode to each other.
a third electrically conductive adhesive layer that bonds the second wiring member and the first wiring to each other; and
a fourth electrically conductive adhesive layer that bonds the second wiring member and the fourth electrode to each other.
The semiconductor device according to claim 1 , wherein: the second wiring member comprises a third lead terminal.
the second wiring member comprises a third lead terminal.
The semiconductor device according to claim 1 , wherein: the second wiring member comprises a third wiring substrate.
the second wiring member comprises a third wiring substrate.
A semiconductor device comprising: a first semiconductor element comprising a first face and a second face opposite to the first face, wherein a first electrode is provided in the first face and a second electrode is provided in the second face; a second semiconductor element comprising a third face and a fourth face opposite to the third face, wherein a third electrode is provided in the third face and a fourth electrode is provided in the fourth face; a first insulating base member comprising a fifth face adhesively bonded to the first face of the first semiconductor element, and a sixth face opposite to the fifth face; a first wiring that penetrates through the first insulating base member to be electrically connected to the first electrode, and that is disposed on the sixth face of the first insulating base member; a second insulating base member comprising a seventh face adhesively bonded to the third face of the second semiconductor element, and an eighth face opposite to the seventh face; a second wiring that penetrates through the second insulating base member to be electrically connected to the third electrode, and that is disposed on the eighth face of the second insulating base member; a fourth wiring member that is electrically connected to the second electrode of the first semiconductor element; a fifth wiring member that faces the eighth face of the second insulating base member, and that is electrically connected to the second wiring; and an insulating fixation member that is disposed between the fourth wiring member and the fifth wiring member, wherein: the fourth wiring member and the fifth wiring member face each other, and are electrically connected to each other; and a current flows in a first direction in the fourth wiring member, and flows in a second direction opposite to the first direction in the fifth wiring member.
a fourth wiring member that is electrically connected to the second electrode of the first semiconductor element;
a fifth wiring member that faces the eighth face of the second insulating base member, and that is electrically connected to the second wiring; and
an insulating fixation member that is disposed between the fourth wiring member and the fifth wiring member,
the fourth wiring member and the fifth wiring member face each other, and are electrically connected to each other; and
a current flows in a first direction in the fourth wiring member, and flows in a second direction opposite to the first direction in the fifth wiring member.
The semiconductor device according to claim 8 , further comprising: a fifth electrically conductive adhesive layer that bonds the fourth wiring member and the second electrode to each other; and a sixth electrically conductive adhesive layer that bonds the fifth wiring member and the second wiring to each other.
a fifth electrically conductive adhesive layer that bonds the fourth wiring member and the second electrode to each other; and
a sixth electrically conductive adhesive layer that bonds the fifth wiring member and the second wiring to each other.
The semiconductor device according to claim 8 , wherein: the fourth wiring member comprises a fourth lead terminal; and the fifth wiring member comprises a fifth lead terminal.
the fourth wiring member comprises a fourth lead terminal; and
the fifth wiring member comprises a fifth lead terminal.
The semiconductor device according to claim 10 , wherein: the insulating fixation member comprises an insulating adhesive layer that bonds the fourth lead terminal and the fifth lead terminal to each other.
the insulating fixation member comprises an insulating adhesive layer that bonds the fourth lead terminal and the fifth lead terminal to each other.
The semiconductor device according to claim 8 , wherein: the insulating fixation member comprises an insulating layer that comprises an eleventh face facing the second face of the first semiconductor element, and a twelfth face opposite to the eleventh face; the fourth wiring member comprises a first electrically conductive layer that is provided on the eleventh face of the insulating layer; and the fifth wiring member comprises a second electrically conductive layer that is provided on the twelfth face of the insulating layer.
the insulating fixation member comprises an insulating layer that comprises an eleventh face facing the second face of the first semiconductor element, and a twelfth face opposite to the eleventh face;
the fourth wiring member comprises a first electrically conductive layer that is provided on the eleventh face of the insulating layer; and
the fifth wiring member comprises a second electrically conductive layer that is provided on the twelfth face of the insulating layer.
The semiconductor device according to claim 8 , further comprising: a sixth wiring member that is electrically connected to the first wiring; and a seventh wiring member that is electrically connected to the fourth electrode.
a sixth wiring member that is electrically connected to the first wiring; and
a seventh wiring member that is electrically connected to the fourth electrode.
The semiconductor device according to claim 13 , further comprising: a seventh electrically conductive adhesive layer that bonds the sixth wiring member and the first wiring to each other; and an eighth electrically conductive adhesive layer that bonds the seventh wiring member and the fourth electrode to each other.
a seventh electrically conductive adhesive layer that bonds the sixth wiring member and the first wiring to each other; and
an eighth electrically conductive adhesive layer that bonds the seventh wiring member and the fourth electrode to each other.
The semiconductor device according to claim 13 , wherein: the sixth wiring member comprises a sixth lead terminal; and the seventh wiring member comprises a seventh lead terminal.
the sixth wiring member comprises a sixth lead terminal; and
the seventh wiring member comprises a seventh lead terminal.
The semiconductor device according to claim 13 , wherein: the sixth wiring member comprises a fourth wiring substrate; and the seventh wiring member comprises a fifth wiring substrate.
the sixth wiring member comprises a fourth wiring substrate; and
the seventh wiring member comprises a fifth wiring substrate.
A semiconductor device according to claim 1 , wherein: the first semiconductor element comprises a fifth electrode that is provided in the first face; the second semiconductor element comprises a sixth electrode that is provided in the third face; and wherein the semiconductor device further comprises: a third wiring that penetrates through the first insulating base member to be electrically connected to the fifth electrode, and that is disposed on the sixth face of the first insulating base member; and a fourth wiring that penetrates through the second insulating base member to be electrically connected to the sixth electrode, and that is disposed on the eighth face of the second insulating base member.
the first semiconductor element comprises a fifth electrode that is provided in the first face;
the second semiconductor element comprises a sixth electrode that is provided in the third face; and
wherein the semiconductor device further comprises:
a third wiring that penetrates through the first insulating base member to be electrically connected to the fifth electrode, and that is disposed on the sixth face of the first insulating base member; and
a fourth wiring that penetrates through the second insulating base member to be electrically connected to the sixth electrode, and that is disposed on the eighth face of the second insulating base member.
Ref KR20180023365: Claims:
One or more first power semiconductors mounted on one side of the first metal member; A second metal member disposed on the first power semiconductor and including a second terminal electrically connected to the load; One or more second power semiconductors mounted on a surface of the second metal member opposite to a surface corresponding to the first power semiconductor; And A third metal member disposed on an upper surface of the second power semiconductor and including a third terminal electrically connected to the power source; / RTI &gt; Wherein at least one of the first terminal, the second terminal and the third terminal corresponds to a part integrally formed with the first metal member, the second metal member and the third metal member, Power module. Wherein the first terminal and the third terminal are elongated in a first direction and the second terminal is elongated in a second direction different from the first direction, Power module. Wherein the first terminal and the third terminal have different heights and are staggered, Power module. Wherein at least one of the first terminal and the third terminal is bent at a predetermined angle with respect to a direction perpendicular to the first direction and then extends in a first direction, Power module. Wherein at least one first diode is mounted on a surface of the first metal member on which the first power semiconductor is mounted, Wherein one or more second diodes are mounted on a surface of the second metal member on which the second power semiconductor is mounted, Power module. Wherein a first signal terminal coupled to the first power semiconductor and a second signal terminal coupled to the second power semiconductor are disposed in opposite directions, Power module. Wherein the first signal terminal and the second signal terminal are disposed between the first terminal and the third terminal, Power module Wherein a spacer capable of electrically connecting the first power semiconductor and the second metal member is disposed between the first power semiconductor and the second metal member, Power module. Wherein the second metal member is in the form of a hollow plate including a passage through which fluid can pass, Wherein the first terminal is electrically connected to a collector of the first power semiconductor, The third terminal is electrically coupled to an emitter of the second power semiconductor, The second terminal being connected to the emitter of the first power semiconductor and the collector of the second power semiconductor, Power module A fourth metal member is disposed on the opposite surface of the first metal member on which the first power semiconductor is mounted with a first electrical insulator interposed therebetween, And a fifth metal member is disposed on a surface of the third metal member opposite to the surface corresponding to the second power semiconductor with a second electrical insulator interposed therebetween. Power module. Wherein at least one of the first electric insulator and the second electric insulator comprises Al 2 O 3 or AlN, Power module
One or more first power semiconductors mounted on one side of the first metal member; A second metal member disposed on the first power semiconductor and including a second terminal electrically connected to the load; One or more second power semiconductors mounted on a surface of the second metal member opposite to a surface corresponding to the first power semiconductor; And A third metal member disposed on an upper surface of the second power semiconductor and including a third terminal electrically connected to the power source; / RTI &gt; Wherein at least one of the first terminal, the second terminal and the third terminal corresponds to a part integrally formed with the first metal member, the second metal member and the third metal member, Power module.
Wherein the first terminal and the third terminal are elongated in a first direction and the second terminal is elongated in a second direction different from the first direction, Power module.
Wherein the first terminal and the third terminal have different heights and are staggered, Power module.
Wherein at least one of the first terminal and the third terminal is bent at a predetermined angle with respect to a direction perpendicular to the first direction and then extends in a first direction, Power module.
Wherein at least one first diode is mounted on a surface of the first metal member on which the first power semiconductor is mounted, Wherein one or more second diodes are mounted on a surface of the second metal member on which the second power semiconductor is mounted, Power module.
Wherein a first signal terminal coupled to the first power semiconductor and a second signal terminal coupled to the second power semiconductor are disposed in opposite directions, Power module.
Wherein the first signal terminal and the second signal terminal are disposed between the first terminal and the third terminal, Power module
Wherein a spacer capable of electrically connecting the first power semiconductor and the second metal member is disposed between the first power semiconductor and the second metal member, Power module.
Wherein the second metal member is in the form of a hollow plate including a passage through which fluid can pass,
Wherein the first terminal is electrically connected to a collector of the first power semiconductor, The third terminal is electrically coupled to an emitter of the second power semiconductor, The second terminal being connected to the emitter of the first power semiconductor and the collector of the second power semiconductor, Power module
A fourth metal member is disposed on the opposite surface of the first metal member on which the first power semiconductor is mounted with a first electrical insulator interposed therebetween, And a fifth metal member is disposed on a surface of the third metal member opposite to the surface corresponding to the second power semiconductor with a second electrical insulator interposed therebetween. Power module.
Wherein at least one of the first electric insulator and the second electric insulator comprises Al 2 O 3 or AlN, Power module