Office Action 1: Non-Final Rejection (2024-11-27)
Rejection types: 103 - Obviousness

CLAIMS:
Claims:
1\. A method of performing a selective oxidation process on non-metal surfaces, comprising: forming a first mixture of a carrier gas and a liquid in a mixer having a mixing block coupled to one or more control valves with a mixing line disposed therebetween, wherein the mixing block includes a first inlet for a first liquid line that provides the liquid into the mixing line, a second inlet for a first carrier gas line that provides the carrier gas into the mixing line, and an outlet for the first mixture that extends from the mixing line; flowing the first mixture from the mixer to a vaporizer to vaporize the first mixture outside of an RTP chamber; and delivering the vaporized first mixture to the RTP chamber via a gas delivery line to expose a substrate disposed in the RTP chamber with the vaporized first mixture to perform a selective oxidation process on the substrate at a temperature of about 500 to about 1100 degrees Celsius.
2\. The method of claim 1, wherein the carrier gas is one or more of hydrogen, nitrogen, argon, or deuterium.
3\. The method of claim 1, further comprising heating the gas line to about 60 to about 120 Celsius.
4\. The method of claim 1, wherein the selective oxidation process is performed in the RTP chamber at a pressure of about 100 to about 550 torr.
5\. The method of claim 1, further comprising: mixing a second carrier gas with a second liquid in a second mixer to form a second mixture; flowing the second mixture to a second vaporizer to vaporize the second mixture outside of the RTP chamber; and delivering the vaporized second mixture to the RTP chamber via a second gas delivery line to perform the selective oxidation process on the substrate.
6\. The method of claim 1, wherein the selective oxidation process selectively oxidizes silicon or densifies aluminum oxide.
7\. The method of claim 1, wherein the first mixture is continuously heated from the mixer to the RTP chamber.
8\. The method of claim 1, wherein the liquid may be provided at about 1 to about 5 gallons per minute.
9\. The method of claim 1, wherein the carrier gas may be provided at about 10 to about 30 liters per minute.
10\. The method of claim 1, wherein the vaporizer is coupled to the mixer and configured to receive the first mixture in a hollow internal volume.
11\. The method of claim 1, further comprising a first mass flow controller disposed along a first liquid line extending between a water supply and the mixer.
12\. The method of claim 1, wherein the liquid is water, and wherein the vaporized first mixture comprises steam and the vaporized carrier gas.

OFFICE ACTION:
DETAILED ACTION
Notice of Pre-AIA  or AIA  Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Claim Rejections - 35 USC § 103
In the event the determination of the status of the application as subject to AIA  35 U.S.C. 102 and 103 (or as subject to pre-AIA  35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA  to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status.
The text of those sections of Title 35, U.S. Code not included in this action can be found in a prior Office action.
The factual inquiries for establishing a background for determining obviousness under 35 U.S.C. 103 are summarized as follows:
1. Determining the scope and contents of the prior art.
2. Ascertaining the differences between the prior art and the claims at issue.
3. Resolving the level of ordinary skill in the pertinent art.
4. Considering objective evidence present in the application indicating obviousness or nonobviousness.
This application currently names joint inventors. In considering patentability of the claims the examiner presumes that the subject matter of the various claims was commonly owned as of the effective filing date of the claimed invention(s) absent any evidence to the contrary.  Applicant is advised of the obligation under 37 CFR 1.56 to point out the inventor and effective filing dates of each claim that was not commonly owned as of the effective filing date of the later invention in order for the examiner to consider the applicability of 35 U.S.C. 102(b)(2)(C) for any potential 35 U.S.C. 102(a)(2) prior art against the later invention.
Claims 1-12 are rejected under 35 U.S.C. 103 as being unpatentable over JP 2003163168A (STEC) in view of Weimer et al (US 2002/045358).
With respect to Claim 1, STEC  discloses a method of performing a process comprising : forming a first mixture of a carrier gas (Figure 3, CG)  and a liquid (Figure 3, LM) in a mixer (Figure 4) having a mixing block (Figure 3, 4) coupled to one or more control valves (Figure 3, 11 and 12)  in a mixing line (Figure 3, GL) disposed therebetween, wherein the mixing block includes a first inlet (Figures 2-3, element  5, opening) for a first liquid line that provides the liquid into the mixing line,   a second inlet  (Figures 2-3, element 6 opening) for a first carrier gas line that provides the carrier gas into the mixing line, and an outlet for the first mixture that extends from the mixing line (Figure 3, opening near 26); flowing the first mixture from the mixer to a vaporizer  (Figure 3, 2) to vaporize the first mixture. See Figure 2-3, and corresponding text, especially paragraphs, 19-31. Moreover, STEC discloses the method of vaporizing can be used in semiconductor manufacturing. See paragraph 1.
However, STEC  does not disclose “outside of an RTP chamber; and delivering the vaporized first mixture to the RTP chamber via a gas delivery line to expose a substrate disposed in the RTP chamber with the vaporized first mixture to perform a selective oxidation process on the substrate at a temperature of about 500 to about 1100 degrees”.
Weimer et al disclose selective oxidation and the delivery of a gas outside of an RTP chamber (Figure 4, 50 and Figure 8) ; and delivering the vaporized first mixture (paragraphs 27-31)  to the RTP chamber via a gas delivery line to expose a substrate  (Figure 4, 58) disposed in the RTP chamber (Figure 4, 50) with the vaporized first mixture to perform a selective oxidation process on the substrate at a temperature of about 500 to about 1100 degrees (paragraph 33). See Figures 4 and 8 and corresponding text, especially paragraphs 27-42.
It would have been obvious for one of ordinary skill in the art, before the effective date of the invention, to use the mixer and vaporizer process of STEC, in the selective oxidation process of Weimer et al, for its known benefit of vaporizing liquid materials. The use of a known process, for its known benefit, vaporizing liquids in semiconductor manufacturing, would have been prima facie obvious to one of ordinary skill in the art.
With respect to Claim 2, Weimer et al wherein the carrier gas is argon. See paragraph 28 of Weimer et al.
With respect to Claim 3, and the limitation “heating the gas line to about 60 to about 120 Celcius”, Weimer et al discloses the use of steam, which occurs at temperatures greater than 100 degrees Celcius. See paragraph 28 of Weimer et al. Moreover, changes in temperature are prima facie obvious in the absence of unobvious results. See In re Aller, 105 USPQ 233 (CCPA 1955).
With respect to Claim 4, and the limitation “wherein the selective oxidation process is performed in the RTP chamber at a pressure of about 100 to about 550 torr”, Weimer et al discloses low pressures and exemplifies 1000 torr in paragraph 33. Where the general conditions of a claim are disclosed in the prior art, it is not inventive to discover the optimum or workable ranges by routine experimentation. See Allen et al v. Coe, 57 USPQ 136. Moreover, the discovery of an optimum value of a result effective variable in a known process is ordinarily within the skill of the art. See In re Antonie, 195 USPQ 6 (CCPA 1977).
With respect to Claim 5, and the limitation “ mixing a second carrier gas with a second liquid in a second mixer to form a second mixture; flowing the second mixture to a second vaporizer to vaporize the second mixture outside of the RTP chamber; and delivering the second mixture to the RTP chamber via a second gas delivery line to perform the selective oxidation process on the substrate”, duplication of parts is prima facie obvious in the absence of unobvious results. See In re Harza, 124 USPQ 378 (CCPA 1960).
With respect to Claim 6, Weimer et al  discloses wherein the selective oxidation process selectively oxidizes silicon or densifies aluminum oxide. See Weimer et al paragraph 25.
With respect to Claim 7, STEC discloses wherein the first mixture is continuously heated from the mixer to the RTP chamber. See paragraph 31 of STEC. Moreover, changes in temperature are prima facie obvious in the absence of unobvious results. See In re Aller, 105 USPQ 233 (CCPA 1955).
With respect to claim 8, and the limitation “wherein the liquid may be provided at about 1 to about 5 gallons per minute”, where the general conditions of a claim are disclosed in the prior art, it is not inventive to discover the optimum or workable ranges by routine experimentation. See Allen et al v. Coe, 57 USPQ 136. Moreover, the discovery of an optimum value of a result effective variable in a known process is ordinarily within the skill of the art. See In re Antonie, 195 USPQ 6 (CCPA 1977).
With respect to Claim 9, and the limitation, “wherein the carrier gas may be provided at about 10 to about 30 litres per minute”, where the general conditions of a claim are disclosed in the prior art, it is not inventive to discover the optimum or workable ranges by routine experimentation. See Allen et al v. Coe, 57 USPQ 136. Moreover, the discovery of an optimum value of a result effective variable in a known process is ordinarily within the skill of the art. See In re Antonie, 195 USPQ 6 (CCPA 1977).
With respect to Claim 10, STEC discloses wherein the vaporizer is coupled to the mixer and configured to receive the first mixture in a hollow internal volume . See Figure 3, 25 and corresponding text of STEC.
With respect to Claim 11, STEC  discloses further comprising a first mass flow controller disposed along a first liquid line extending between a water supply and the mixer. See STEC paragraph 14.
With respect to Claim 12, Weimer et al  discloses wherein the liquid is water, and wherein the vaporized first mixture comprises steam and the vaporized carrier gas. See paragraphs 27-31 of Weimer et al.
Claim Objections
Claims 1-12 are objected to because of the following informalities : the phrase “a selective oxidation process”, appears in Claim 1, lines 1 and line 13 .  The second occurrence should be changed to “the selective oxidation process”, as antecedent basis is provided. Appropriate correction is required. Claims 2-12 are objected to based on their dependency on Claim 1.
Conclusion
The prior art made of record and not relied upon is considered pertinent to applicant's disclosure.


NEXT OFFICE ACTION: DETAILED ACTION
Notice of Pre-AIA  or AIA  Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Allowable Subject Matter
Claims 1-13 are allowed.
The following is an examiner’s statement of reasons for allowance: The present Claims are allowed in view of Applicants’ amendments and arguments. The closest prior art known to the Examiner is listed on the PTO 892 and IDS forms of record.
With respect to Claims 1-13, the cited prior art does not anticipate or make obvious inter alia “ forming a first mixture of a carrier gas and a liquid in a mixer having a mixing block coupled to one or more control valves that are fluidly coupled with a mixing line disposed in the mixing block, wherein the mixing block includes a first inlet for a first gas line that provides the liquid into the mixing line, a second inlet for a first carrier gas line that provides the carrier gas into the mixing line, and an outlet for the first mixture that extends from a mixing line to an outer sidewall of the mixing block”.
Any comments considered necessary by applicant must be submitted no later than the payment of the issue fee and, to avoid processing delays, should preferably accompany the issue fee.  Such submissions should be clearly labeled “Comments on Statement of Reasons for Allowance.”
Conclusion

CITED REFERENCE SUMMARIES: Ref US9514968B2: Claims:
An apparatus for thermally processing a substrate, comprising: a chamber having sidewalls defining a processing volume and having a substrate support disposed within the processing volume; a first heat source comprising a plurality of lamps disposed opposite the substrate support to provide thermal energy to a substrate when disposed on the substrate support, wherein an energy density of the plurality of lamps is about 30 watts per square centimeter to about 80 watts per square centimeter; and a second heat source coupled to at least one of the sidewalls to provide thermal energy to the sidewalls.
a chamber having sidewalls defining a processing volume and having a substrate support disposed within the processing volume;
a first heat source comprising a plurality of lamps disposed opposite the substrate support to provide thermal energy to a substrate when disposed on the substrate support, wherein an energy density of the plurality of lamps is about 30 watts per square centimeter to about 80 watts per square centimeter; and
a second heat source coupled to at least one of the sidewalls to provide thermal energy to the sidewalls.
The apparatus of claim 1 , wherein the second heat source comprises a heat exchange loop having a conduit for flowing a heat exchange medium through the sidewalls or through a body disposed adjacent to the sidewalls.
The apparatus of claim 1 , wherein the second heat source comprises one or more resistive heaters disposed in or adjacent to the sidewalls.
The apparatus of claim 1 , further comprising: a heat exchange loop having conduits passing adjacent to the lamps to remove heat from components of the apparatus adjacent to the lamps.
a heat exchange loop having conduits passing adjacent to the lamps to remove heat from components of the apparatus adjacent to the lamps.
The apparatus of claim 1 , further comprising: a heat exchange loop having conduits passing through or adjacent to a lower portion of the chamber disposed beneath the substrate support to control a temperature of the lower portion of the chamber independently of the sidewalls that are coupled to the second heat source.
a heat exchange loop having conduits passing through or adjacent to a lower portion of the chamber disposed beneath the substrate support to control a temperature of the lower portion of the chamber independently of the sidewalls that are coupled to the second heat source.
An apparatus for thermally processing a substrate, comprising: a chamber having sidewalls defining a processing volume and having a substrate support disposed within the processing volume; a first heat source comprising a plurality of lamps disposed opposite the substrate support to provide thermal energy to a substrate when disposed on the substrate support, wherein an energy density of the plurality of lamps is about 30 watts per square centimeter to about 80 watts per square centimeter; and a second heat source coupled to at least one of the sidewalls to provide thermal energy to the sidewalls; a base ring including the sidewalls and defining the processing volume to be a cylindrical center processing volume; a top wall coupled to the base ring to seal the cylindrical center processing volume from an upper end of the base ring; and a bottom wall coupled to the base ring to seal the cylindrical center volume from a lower end of the sidewalls of the base ring, wherein the first heat source is disposed above the top wall, and wherein the second heat source is coupled to the base ring.
a second heat source coupled to at least one of the sidewalls to provide thermal energy to the sidewalls;
a base ring including the sidewalls and defining the processing volume to be a cylindrical center processing volume;
a top wall coupled to the base ring to seal the cylindrical center processing volume from an upper end of the base ring; and
a bottom wall coupled to the base ring to seal the cylindrical center volume from a lower end of the sidewalls of the base ring, wherein the first heat source is disposed above the top wall, and wherein the second heat source is coupled to the base ring.
The apparatus of claim 6 , further comprising one or more sensors coupled to the base ring to monitor a temperature of the sidewalls.
The apparatus of claim 6 , wherein the second heat source comprises a heat exchange loop having a conduit for flowing a heat exchange medium through the sidewalls or through a body disposed adjacent to the sidewalls.
The apparatus of claim 6 , wherein the second heat source comprises one or more resistive heaters disposed in or adjacent to the sidewalls.
The apparatus of claim 6 , further comprising: a heat exchange loop having conduits passing adjacent to the lamps to remove heat from components of the apparatus adjacent to the lamps.
The apparatus of claim 6 , further comprising: a heat exchange loop having conduits passing through or adjacent to a lower portion of the chamber disposed beneath the substrate support to control a temperature of the lower portion of the chamber independently of the sidewalls that are coupled to the second heat source.
Ref US6051512A: Claims:
A method for rapid thermal processing (RTP) of a plurality of objects, the plurality of objects having substantially identical shapes, the shapes being substantially the shape of flat plates, the flat plates having a first surface, a second surface, and an edge, comprising; introducing the plurality of objects into an RTP chamber so that each object is supported in a closely spaced apart stack; and processing the plurality of objects by uniformly irradiating a flat surface of each wafer.
introducing the plurality of objects into an RTP chamber so that each object is supported in a closely spaced apart stack; and
processing the plurality of objects by uniformly irradiating a flat surface of each wafer.
The method of claim 1, wherein the plurality of objects are introduced simultaneously into the RTP chamber.
The method of claim 2, wherein the plurality of objects are a plurality of semiconductor wafers.
The method of claim 3, wherein, during the step of introducing the semiconductor wafers into the RTP chamber, the semiconductor wafers are supported by support means used to support the semiconductor wafers during the processing step.
The method of claim 4, wherein, during the step of introducing the semiconductor wafers into the RTP chamber, a guard ring surrounding the stack of semiconductor wafers is also introduced into the RTP chamber.
The method of claim 4, wherein, during the step of introducing the semiconductor wafers into the RTP chamber, a susceptor closely spaced apart from the stack of semiconductor wafers is also introduced into the RTP chamber.
The method of claim 4, wherein, during the step of introducing the semiconductor wafers into the RTP chamber, the semiconductor wafers are introduced into the chamber by a linear motion of a robot arm.
The method of claim 4, wherein, during the step of introducing the semiconductor wafers into the RTP chamber, the semiconductor wafers are introduced into the chamber by a rotary motion of a robot arm.
The method of claim 3, wherein each semiconductor wafer is supported by a different support pan in the step of introducing the semiconductor wafers into the RTP chamber, and where all of the support pans are supported by a single robot arm.
The method of claim 2, wherein each semiconductor wafer is supported by a different support pan in the step of introducing the semiconductor wafers into the RTP chamber, and each support pan is supported by different robot arm.
The method of claim 1, wherein the plurality of objects are introduced into the chamber sequentially.
The method of claim 1, wherein the plurality of objects are not identical.
The method of claim 1, wherein the temperature of at least two of the objects are monitored during the processing step.
The method of claim 13, wherein the temperature of each of the plurality of objects are monitored during the processing step.
Ref US2002045358: Claims:
A method of fabricating a semiconductor device, the method comprising: depositing an oxygen-deficient dielectric film; and subjecting the dielectric film to a wet oxidation in a rapid thermal process chamber at a temperature of at least about 450° C. to increase the oxygen content of the dielectric film.
depositing an oxygen-deficient dielectric film; and
subjecting the dielectric film to a wet oxidation in a rapid thermal process chamber at a temperature of at least about 450° C. to increase the oxygen content of the dielectric film.
The method of claim 1 wherein the wet oxidation process is performed at a temperature in a range of about 450° C. to about 750° C.
The method of claim 1 wherein the wet oxidation process is performed at a temperature in a range of about 750° C. to about 950° C.
The method of claim 1 wherein the oxidation process is carried out for a duration in a range of about 20 to about 60 seconds.
The method of claim 1 wherein subjecting the dielectric film to a wet oxidation includes heating a mixture of hydrogen and oxygen gases wherein the ratio of steam to other gases in the chamber is in the range of about 0.1 to about 0.5.
The method of claim 1 wherein subjecting the dielectric film to a wet oxidation includes heating a mixture of hydrogen and oxygen gases wherein the ratio of hydrogen gas to oxygen gas in the mixture is in the range of about 0.1 to about 0.8.
The method of claim 1 wherein subjecting the dielectric film to a wet oxidation is performed for a duration such that an oxidizing species does not diffuse significantly through the dielectric film into an underlying layer.
The method of claim 1 wherein depositing a dielectric film includes depositing a material having a dielectric constant of at least about 25.
The method of claim 1 further including: subjecting the dielectric film to a heat treatment in an ambient comprising a stabilizing gas selected from the group consisting of N2, O2, O3, NO, and N2O.
subjecting the dielectric film to a heat treatment in an ambient comprising a stabilizing gas selected from the group consisting of N2, O2, O3, NO, and N2O.
The method of claim 9 wherein subjecting the dielectric film to a heat treatment in an ambient comprising a stabilizing gas is performed prior to subjecting the film to the wet oxidation.
The method of claim 9 wherein the wet oxidation is performed at a temperature less than the temperature for subjecting the dielectric film to a heat treatment in an ambient comprising a stabilizing gas.
The method of claim 9 wherein subjecting the dielectric film to a heat treatment in an ambient comprising a stabilizing gas is performed in the rapid thermal process chamber.
A method of fabricating a semiconductor device, the method comprising: depositing a dielectric film over an active region of a semiconductor substrate to form a gate of a transistor; and subjecting the dielectric film to a wet oxidation in a rapid thermal process chamber at a temperature greater than about 450° C.
depositing a dielectric film over an active region of a semiconductor substrate to form a gate of a transistor; and
subjecting the dielectric film to a wet oxidation in a rapid thermal process chamber at a temperature greater than about 450° C.
The method of claim 13 wherein the wet oxidation is performed at a temperature in a range of about 750° C. to about 950° C.
The method of claim 13 wherein the oxidation process is carried out for a duration in a range of about 20 to about 60 seconds.
The method of claim 13 wherein depositing a dielectric film includes depositing a material having a dielectric constant of at least about 25.
The method of claim 13 wherein depositing a dielectric film includes depositing a material selected from the group consisting of tantalum oxide and silicon nitride.
A method of fabricating a semiconductor device, the method comprising: depositing a dielectric film over an active region of a semiconductor substrate to form a gate of a transistor; and providing steam to a vicinity of the dielectric film while the substrate is in a rapid thermal process chamber at a temperature greater than about 450° C.
providing steam to a vicinity of the dielectric film while the substrate is in a rapid thermal process chamber at a temperature greater than about 450° C.
The method of claim 18 wherein providing steam includes heating a mixture of hydrogen and oxygen gases, and wherein the ratio of steam to other gases in the chamber is in the range of about 0.1 to about 0.5.
The method of claim 18 wherein providing steam includes heating a mixture of hydrogen and oxygen gases wherein the ratio of hydrogen gas to oxygen gas in the mixture is in the range of about 0.1 to about 0.8.
The method of claim 18 wherein the steam is provided to the rapid thermal process chamber using a bubbled water vapor system.
The method of claim 18 wherein the steam is provided to the rapid thermal process chamber using a pyrogenic system.
The method of claim 18 wherein the steam is provided to the rapid thermal process chamber using a catalytic system.
The method of claim 18 wherein providing steam to a vicinity of the dielectric film includes generating steam in the chamber in situ.
The method of claim 18 further including: subjecting the dielectric film to a heat treatment in an ambient comprising a stabilizing gas selected from the group consisting of N2, O2, O3, NO, and N2O.
A method of fabricating a capacitive element for a semiconductor device, the method comprising: forming a lower electrode of the capacitive element; depositing a dielectric film over the lower electrode; subjecting the dielectric film to a wet oxidation in a rapid thermal process chamber at a temperature of at least about 450° C.; forming an upper electrode of the capacitive element over the dielectric film.
forming a lower electrode of the capacitive element;
depositing a dielectric film over the lower electrode;
subjecting the dielectric film to a wet oxidation in a rapid thermal process chamber at a temperature of at least about 450° C.;
forming an upper electrode of the capacitive element over the dielectric film.
The method of claim 26 wherein the wet oxidation is performed at a temperature in a range of about 750° C. to about 950° C.
The method of claim 26 wherein the oxidation process is carried out for a duration in a range of about 20 to about 60 seconds.
The method of claim 26 wherein depositing a dielectric film includes depositing a material having a dielectric constant of at least about 25.
The method of claim 26 wherein depositing a dielectric film includes depositing a material selected from the group consisting of tantalum oxide, silicon nitride, barium strontium titanate, strontium titanate, lead zirconium titanate and strontium bismuth tantalate.
The method of claim 26 further including: subjecting the dielectric film to a heat treatment in an ambient comprising a stabilizing gas selected from the group consisting of N2, O2, O3, NO, and N2O.
The method of claim 26 wherein the wet oxidation is performed for a duration such that an oxidizing species does not significantly affect capacitive properties of the dielectric film.
A method of fabricating a capacitive element for a semiconductor device, the method comprising: forming a lower electrode of the capacitive element; depositing a dielectric film over the lower electrode; providing steam to a vicinity of the dielectric film in a rapid thermal process chamber at a temperature of at least about 450° C.; and forming an upper electrode of the capacitive element over the dielectric film.
providing steam to a vicinity of the dielectric film in a rapid thermal process chamber at a temperature of at least about 450° C.; and
The method of claim 33 wherein providing steam includes heating a mixture of hydrogen and oxygen gases and wherein the ratio of steam to other gases in the chamber is in the range of about 0.1 to about 0.5.
The method of claim 33 wherein providing steam includes heating a mixture of hydrogen and oxygen gases wherein the ratio of hydrogen gas to oxygen gas in the mixture is in the range of about 0.1 to about 0.8.
The method of claim 33 wherein the steam is provided to the rapid thermal process chamber using a bubbled water vapor system.
The method of claim 33 wherein the steam is provided to the rapid thermal process chamber using a pyrogenic system.
The method of claim 33 wherein the steam is provided to the rapid thermal process chamber using a catalytic system.
The method of claim 33 wherein providing steam to a vicinity of the dielectric film includes generating steam in the chamber in situ.
The method of claim 33 wherein providing steam to a vicinity of the dielectric film is performed for a duration such that an oxidizing species does not diffuse significantly through the dielectric film so as to oxidize the lower electrode.
Ref JP2003163168A: Claims:
A liquid material and a carrier gas are supplied, A gas-liquid mixing section including a control valve having a flow rate control function of mixing the liquid material with a carrier gas while controlling the flow rate, and a gas provided independently of the gas-liquid mixing section and introduced through a pipeline. The liquid-vapor mixture from the liquid-mixing section is discharged from the nozzle section to reduce the pressure to vaporize the liquid material, and the gas generated by this vaporization is led out by the carrier gas. Liquid material vaporizer.
The liquid material vaporizer according to claim 1, wherein the gas-liquid mixing section and the vaporization section are set to temperatures suitable for exhibiting their respective functions.