Office Action 2: Notice of Allowance (2025-02-26)

CLAIMS:
Listing of Claims:

Response to Office Action mailed October 23, 2024 AMENDMENTS TO THE CLAIMSThis listing of claims will replace all prior versions, and listings, of claims in the application:

1-11. (Canceled)210

12\. (Currently Amended) A film formation method comprising:providing a substrate including, on a surface of the substrate, a first region in which a first material is exposed and a second region in which a second material different from the first material is exposed;
supplying, to the surface of the substrate, vapor of a solution that contains a raw material of a self-assembled monolayer and a solvent by which the raw material is dissolved, and selectively forming the self-assembled monolayer in the first region; and
forming a desired target film in the second region by using the self-assembled monolayer formed in the first region,
wherein the selectively forming the self-assembled monolayer in the first region includes supplying the vapor of the solution to the surface of the substrate to deposit the raw material on the surface, and removing the raw material deposited on the surface and unreacted on the surface, and
wherein the removing the raw material deposited on the surface and unreacted on the surface includes supplying, to the surface, the solvent that is heated to 65 degrees C or higher.

13\. (Previously Presented) The film formation method of Claim 12, wherein the supplying the vapor of the solution to the surface of the substrate includes controlling a temperature of the substrate to be higher than a temperature of the solution.

14\. (Previously Presented) The film formation method of Claim 13, wherein the supplying the vapor of the solution to the surface of the substrate includes controlling a temperature of a portion of an inner wall surface of a first processing container that is in contact with the vapor to be higher than the temperature of the solution, the first processing container accommodating the substrate.

15\. (Previously Presented) The film formation method of Claim 14, wherein the supplying the vapor of the solution to the surface of the substrate includes generating the vapor inside a second processing container accommodating the solution and sending the generated vapor from the second processing container to the first processing container accommodating the substrate.

16\. (Previously Presented) The film formation method of Claim 15, wherein the generating the vapor of the solution includes bubbling the solution inside the second processing container.

17\. (Currently Amended) The film formation method of Claim 16, wherein the solvent contained in the solution \[\[is\]\] has a boiling point of 40 degrees C to 120 degrees C.

18\. (Previously Presented) The film formation method of Claim 17, wherein a time duration during which the vapor of the solution is supplied to the surface of the substrate is 60 seconds to 300 seconds.

19\. (Canceled)

20\. (Currently Amended) The film formation method of Claim \[\[19\]\]12, wherein the first material in the first region is a metal or a semiconductor,wherein the second material in the second region is an insulating material, and

wherein the raw material of the self-assembled monolayer is a thiol-based compound.

21\. (Previously Presented) The film formation method of Claim 12, wherein the supplying the vapor of the solution to the surface of the substrate includes controlling a temperature of a portion of an inner wall surface of a first processing container that is in contact with the vapor to be higher than a temperature of the solution, the first processing container accommodating the substrate.

22\. (Currently Amended) The film formation method of Claim 12, wherein the substrate is accommodated in a first processing container, andwherein the supplying the vapor of the solution to the surface of the substrate includes generating the vapor inside a second processing container accommodating the solution and sending the generated vapor from the second processing container to the first processing container.

23\. (Previously Presented) The film formation method of Claim 22, wherein the generating the vapor of the solution includes bubbling the solution inside the second processing container.

24\. (Currently Amended) The film formation method of Claim 12, wherein the solvent contained in the solution \[\[is\]\] has a boiling point of 40 degrees C to 120 degrees C.

25\. (Previously Presented) The film formation method of Claim 12, wherein a time duration during which the vapor of the solution is supplied to the surface of the substrate is 60 seconds to 300 seconds.

26\. (Canceled)

27\. (Previously Presented) The film formation method of Claim 12, wherein the first material in the first region is a metal or a semiconductor,wherein the second material in the second region is an insulating material, and
wherein the raw material of the self-assembled monolayer is a thiol-based compound.

28\. (Previously Presented) The film formation method of Claim 12, wherein the first material in the first region is an insulating material,wherein the second material in the second region is a metal or a semiconductor, and
wherein the raw material of the self-assembled monolayer is a silane-based compound.

29\. (Currently Amended) A film formation apparatus for forming a desired target film on a substrate including, on a surface of the substrate, a first region in which a first material is exposed and a second region in which a second material different from the first material is exposed, the film formation apparatus comprising:a first processor configured to supply, to the surface of the substrate, vapor of a solution that contains a raw material of a self-assembled monolayer and a solvent by which the raw material is dissolved, and selectively form the self-assembled monolayer in the first region;
a second processor configured to form the desired target film in the second region by using the self-assembled monolayer formed by the first processor;
a transporter configured to transport the substrate with respect to the first processor and the second processor; and
a controller configured to control the first processor, the second processor, and the transporter wherein the first processor includes a processing container configured to accommodate the solution and a nozzle configured to supply the solvent to the surface of the substrate, and

Response to Office Action mailed October 23, 2024 wherein the controller is configured to control the first processor so as to supply the vapor of the solution to the surface of the substrate to deposit the raw material on the surface, and remove the raw material deposited on the surface and unreacted on the surface by using the solvent that is heated to 65 degrees C or higher in the processing container.

OFFICE ACTION:
DETAILED ACTION
Notice of Pre-AIA  or AIA  Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Examiner’s Amendment
2.	An examiner's amendment to the record appears below.  Should the changes and/or additions be unacceptable to applicant, an amendment may be filed as provided by 37 CFR 1.312.  To ensure consideration of such an amendment, it MUST be submitted no later than the payment of the issue fee.
Authorization for this examiner's amendment was given in a telephone interview with Rose Moller-Jacobs (Reg. No. 72,727) on Feb. 14, 2025.
3.	The application has been amended as follows:
Amend claims 12 and 29, including [deletion] and insertion as follows:
12. (Currently Amended) A film formation method comprising:
providing a substrate including, on a surface of the substrate, a first region in which a first material is exposed and a second region in which a second material different from the first material is exposed;
supplying, to the surface of the substrate, vapor of a solution that contains a raw material of a self-assembled monolayer and a solvent by which the raw material is dissolved, and selectively forming the self-assembled monolayer in the first region; and
forming a [desired] target film in the second region by using the self-assembled monolayer formed in the first region,
wherein the selectively forming the self-assembled monolayer in the first region includes supplying the vapor of the solution to the surface of the substrate to deposit the raw material on the surface, and removing the raw material deposited on the surface and unreacted raw material on the surface, and
wherein the removing the raw material deposited on the surface and unreacted raw material on the surface includes supplying, to the surface, the solvent that is heated to a temperature within a range of 65 degrees C [or higher] to 85 degrees C.
29. (Currently Amended) A film formation apparatus for forming a [desired] target film on a substrate including, on a surface of the substrate, a first region in which a first material is exposed and a second region in which a second material different from the first material is exposed, the film formation apparatus comprising:
a first processor configured to supply, to the surface of the substrate, vapor of a solution that contains a raw material of a self-assembled monolayer and a solvent by which the raw material is dissolved, and selectively form the self-assembled monolayer in the first region;
a second processor configured to form the [desired] target film in the second region by using the self-assembled monolayer formed by the first processor;
a transporter configured to transport the substrate with respect to the first processor and the second processor; and
a controller configured to control the first processor, the second processor, and the transporter,
wherein the first processor includes a processing container configured to accommodate the solution and a nozzle configured to supply the solvent to the surface of the substrate, and
wherein the controller is configured to control the first processor so as to supply the vapor of the solution to the surface of the substrate to deposit the raw material on the surface, and remove the raw material deposited on the surface and unreacted raw material on the surface by using the solvent that is heated to a temperature within a range of 65 degrees C [or higher] to 85 degrees C in the processing container.
Allowable Subject Matter
4.	Claims 12-18, 20-25 and 27-29 are allowed.
5.	The following is an examiner’s statement of reasons for allowance:
In re claim 12, the current invention is deemed to be directed to a nonobvious improvement over the invention published in US 2018/0053659.   The improvement comprises: the selectively forming the self-assembled monolayer in the first region includes supplying the vapor of the solution to the surface of the substrate to deposit the raw material on the surface, and removing the raw material deposited on the surface and unreacted raw material on the surface, and wherein the removing the raw material deposited on the surface and unreacted raw material on the surface includes supplying, to the surface, the solvent that is heated to a temperature within a range of 65 degrees C to 85 degrees C.
In re claim 29, the current invention is deemed to be directed to a nonobvious improvement over the invention published in US 2018/0053659.   The improvement comprises: the controller is configured to control the first processor so as to supply the vapor of the solution to the surface of the substrate to deposit the raw material on the surface, and remove the raw material deposited on the surface and unreacted raw material on the surface by using the solvent that is heated to a temperature within a range of 65 degrees C to 85 degrees C in the processing container.
Response to Arguments
6.	Applicant’s arguments and amendments, submitted on 1/9/25 and 2/14/25, respectively, have been fully considered and are persuasive.  The rejections, as set forth in the previous office action, have been withdrawn.   The current application is thus allowed.
7.	Any comments considered necessary by applicant must be submitted no later than the payment of the issue fee and, to avoid processing delays, should preferably accompany the issue fee.  Such submissions should be clearly labeled “Comments on Statement of Reasons for Allowance.”
8.

APPLICANT REBUTTAL: REMARKS
Upon entry of this Amendment, Claims 12-18, 20-25, and 27-29 will be pending in this application.
Claims 12, 17, 22, 24 and 29 have been amended, and Claims 19 and 26 have been canceled without prejudice. Support for the amendments can be found at least in paragraphs [0019], [0023], [0031], [0058] and [0066] of the specification as filed, original Claim 19, and FIGS. 3B and 3C in the present application. Claim 20 has also been amended for consistency with and dependency from amended Claim 12. No new matter has been added.
Applicant respectfully requests the entry of the amendments and reconsideration of the application in view of the amendments and the remarks below.
Claim Re
j
ections under 35 U.S.C.
&
102 and
&
Claims 12, 26, and 28 have been rejected under 35 U.S.C. 102(a)(1)/102(a)(2) as allegedly being anticipated by Chakraborty et al. (US 2018/0053659, hereinafter "Chakraborty"); Claims 12-16, 21-23, 26, 27, and 29 have been rejected under 35 U.S.C. 102(a)(1)/102(a)(2) as allegedly being anticipated by Visser et al. (US 2017/0062210, hereinafter "Visser"); and Claims 12, 13, and 27 have been rejected under 35 U.S.C. 102(a)(2) as allegedly being anticipated by Lee et al. (US 2020/0020580, hereinafter "Lee").
Claims 17-20, 24, and 25 have been rejected under 35 U.S.C. 103 as allegedly being unpatentable over Visser.
Applicant respectfully traverses the rejections for at least the following reasons.
(1)    Regarding Claims 12-18, 20-25, 27, and 28
Without conceding the merits of the rejections, Claim 12 has been amended to recite as follows (underline indicates addition):
12.    A film formation method comprising:
providing a substrate including, on a surface of the substrate, a first region in
which a first material is exposed and a second region in which a second material
different from the first material is exposed;
supplying, to the surface of the substrate, vapor of a solution that contains a raw
material of a self-assembled monolayer and a solvent by which the raw material is
dissolved, and selectively forming the self-assembled monolayer in the first region; and
forming a desired target film in the second region by using the self-assembled
monolayer formed in the first region,
wherein the selectively formin
g
the self-assembled monola
y
er in the first re
g
ion
includes supplyin
g
the vapor of the solution to the surface of the substrate to deposit the
raw material on the surface, and removin
g
the raw material deposited on the surface
and unreacted on the surface, and
wherein the removin
g
the raw material deposited on the surface and unreacted
on the surface includes supplyin
z
to the surface, the solvent that is heated to 6
de
g
rees
C or hi
g
her.
Consistent with amended Claim 12, the present disclosure describes that a vapor of a solution, which contains a raw material 21 of the SAM 20
and a solvent by which the raw material 21 is dissolved,
is supplied to a surface 10a of a substrate 10, and the raw material 21 is deposited on the surface l0a of the substrate 10 (see paragraphs [0019] and [0023] of the
specification as filed and FIG. 3B in the present application). Thereafter, the raw material 21 deposited on the surface 10a of the substrate 10 and unreacted on the surface 10a is removed. The removal of the unreacted raw material 21 includes, for example,
cleaning the surface
a of the substrate 10 with the solvent that dissolves the raw material 21.
The solvent may be heated to improve a deter
g
ency thereof. In this case, a heatin
g
temperature of the solvent is, for example, 65 de
g
rees C to 85 degrees C
(see paragraphs [0019], [0023], and [0036] of the specification as filed and FIGS. 3B and 3C in the present application).
FIG. 3A
FIG. 3B
FIG. 3C
FIG. 3D
The cited references, whether taken alone or in combination, fail to disclose or suggest at least the feature of "wherein the removing the raw material deposited on the surface and unreacted on the surface includes supplying, to the surface, the solvent that is heated to 65 degrees C or higher" as recited in amended Claim 12.
In the Office Action, the Examiner asserted that Visser teaches that the selectively
forming the self-assembled monolayer 610 in the first region 602 (Fig. 6E) includes supplying a vapor of a solution 608 (Fig. 6D) to a surface of a substrate 600 to deposit a raw material 610 on the surface, and removing the raw material 610 deposited on the surface and unreacted on the surface 600 (Figs. 6F and 6G) (see the 103 rejection against Claim 19 on page 11, line 7-11 of the Office Action).
Visser discloses that a self-assembled monolayer 610 is deposited on an exposed copper surface 602 of a substrate 600 by using a vapor of a chemical precursor 608, and a second layer 612 is deposited on an exposed silicon-containing surface 604 of the substrate 600 by using the self-assemble monolayer 610 as a diffusion barrier layer. However, Visser is completely silent on a feature that the chemical precursor 608 deposited on the silicon-containing surface 604 and unreacted on the silicon-containing surface 604 is removed after the deposition of the self- assemble monolayer 610 (see paragraphs [0036] to [0038] and Figs. 6D to 6G of Visser).
Further, Visser discloses that the chemical precursor 608 is heated at 65 degrees C to generate the vapor of the chemical precursor 608, the vapor of the chemical precursor 608 is provided to a HWCVD process chamber via delivery lines heated to about 75 degrees C to prevent condensation, walls of the HWCVD process chamber are maintained at about 65 degrees C, and the substrate is exposed to the vapor of the chemical precursor 608 at a substrate temperature of about 25 to 85 degrees C (see paragraph [0037] of Visser). That is, Visser merely discloses that the chemical precursor 608, the delivery lines, the walls of the HWCVD process chamber, and the substrate are heated during a process of generating the vapor of the
chemical precursor (including the precursor and the solvent)
and supplying thus generated vapor for the deposition of the self-assemble monolayer 610, but does not disclose that a heated solvent
(not including the precursor)
is supplied to remove the chemical precursor deposited on the silicon-containing surface 604 and unreacted on the silicon-containing surface 604 after the self- assemble monolayer 610 is deposited.
6F
<--
Thus,
Visser fails to disclose or su
gg
est at least the feature of amended Claim 12, i.e., the feature that the raw material deposited on the surface of the substrate and unreacted on the surface of the substrate is removed by supplyin
g
, to the surface, the solvent that is heated to 65 degrees C or higher.
In addition, none of the other cited references remedies the deficiency of Visser.
Accordingly, it is respectfully submitted that amended Claim 12 is patentable over the cited references.
Claims 13-18, 20-25, 27, and 28 directly or indirectly depend from amended Claim 12. Thus, Claims 13-18, 20-25, 27, and 28 are also allowable for at least the same reasons as discussed above with respect to amended Claim 12. Further, it is respectfully submitted that Claims 13-18, 20-25, 27, and 28 are also allowable because of the specific features recited therein which, when taken alone and/or in combination with the features recited in amended Claim 12, are not taught by the cited references.
(2)    Regarding Claim 29
Without conceding the merits of the rejections, Claim 29 has been amended to recite as follows (underline indicates addition):
29.    A film formation apparatus for forming a desired target film on a substrate
including, on a surface of the substrate, a first region in which a first material is exposed
and a second region in which a second material different from the first material is
exposed, the film formation apparatus comprising:
a first processor configured to supply, to the surface of the substrate, vapor of a
solution that contains a raw material of a self-assembled monolayer and a solvent by
which the raw material is dissolved, and selectively form the self-assembled monolayer
in the first region;
a second processor configured to form the desired target film in the second
region by using the self-assembled monolayer formed by the first processor;
a transporter configured to transport the substrate with respect to the first
processor and the second processor; and
a controller configured to control the first processor, the second processor, and
the transporters
wherein the first processor includes a processin
g
container con
fig
ured to
accommodate the solution and a nozzle con
fig
ured to supply the solvent to the surface of
the substrate, and
wherein the controller is con
fig
ured to control the first processor so as to supply
the vapor of the solution to the surface of the substrate to deposit the raw material on
the surface, and remove the raw material deposited on the surface and unreacted on the
surface b
y
usin
g
the solvent that is heated to 6
de
g
rees C or hi
g
her in the processin
g
con
tain
er.
Claim 29 has been amended to include similar features recited in amended Claim 12. Accordingly, it is respectfully submitted that Claim 29 is also patentable over the cited references.
In light of the foregoing, Applicant respectfully requests withdrawal of the 102 and 103 rejections.
CONCLUSION


CITED REFERENCE SUMMARIES: Ref US20180053659: Claims:
1. A method of selectively depositing a low-k dielectric layer atop a substrate having an exposed silicon surface and an exposed silicon-containing surface, comprising:
(a) growing an organosilane based self-assembled monolayer atop the exposed silicon-containing surface, wherein the organosilane based self-assembled monolayer is thermally stable at a first temperature of greater than about 300 degrees Celsius; and (b) selectively depositing a low-k dielectric layer atop the exposed silicon surface of the substrate, wherein the organosilane based self-assembled monolayer inhibits deposition of the low-k dielectric layer atop the silicon-containing surface.
2. The method of claim 1, wherein the first temperature is about 300 to about 500 degrees Celsius.
3. The method of claim 1, wherein the silicon-containing surface comprises silicon oxide (SiO2), silicon nitride (SiN), or silicon oxynitride (SiON).
4. The method of claim 1, wherein growing the organosilane based self-assembled monolayer comprises exposing the substrate to a solution comprising an organosilane and a solvent.
5. The method of claim 4, wherein the organosilane comprises a C-8 to C-30 alkyl chain.
6. The method of claim 4, wherein the substrate is rinsed with the solvent after growing the organosilane based self-assembled monolayer.
7. The method of claim 4, wherein the solution comprises the solvent having about 1 millimol to about 10 millimol of organosilane.
8. The method of claim 1, further comprising heating the substrate to a temperature of about 500 to about 1000 degrees Celsius to remove the organosilane based self-assembled monolayer.
9. A method of selectively depositing a layer atop a substrate having an exposed metal surface and an exposed silicon-containing surface, comprising:
(a) growing a first self-assembled monolayer atop the exposed metal surface; (b) growing a second self-assembled monolayer atop the exposed silicon-containing surface, wherein the second self-assembled monolayer is organosilane based; (c) heating the substrate to a temperature of about 200 to about 300 degrees Celsius to remove the first self-assembled monolayer from atop the exposed metal surface; (d) selectively depositing a layer atop the exposed metal surface, wherein the layer is a low-k dielectric layer or a metal layer; and (e) heating the substrate to a temperature of about 500 to about 1000 degrees Celsius to remove the second self-assembled monolayer from atop the exposed silicon-containing surface.
10. The method of claim 9, wherein depositing the first self-assembled monolayer comprises exposing the substrate to a first solution comprising a solvent and a self-assembled monolayer precursor.
11. The method of claim 10, wherein the self-assembled monolayer precursor comprises C-8 to C-30 chain alkyl thiols, organophosphonic acids, or sulfonic acids.
12. The method of claim 10, wherein the first solution comprises the solvent having about 1 millimol to about 10 millimol of self-assembled monolayer precursor.
13. The method of claim 10, wherein depositing the second self-assembled monolayer comprises exposing the substrate to a second solution comprising an organosilane and a solvent.
14. The method of claim 13, wherein the organosilane comprises C-8 to C-30 alkyl chains.
15. The method of claim 13, wherein the second solution comprises the solvent having about 1 millimol to about 10 millimol of organosilane.
16. The method of claim 1, wherein the low-k dielectric layer has a low-k value in an amount of about 2.5 to about 3.5.
17. The method of claim 9, wherein the low-k dielectric layer has a low-k value in an amount of about 2.5 to about 3.5.
18. A semiconductor substrate comprising:
a first layer comprising a silicon-containing surface and a silicon surface; and a second layer comprising an organosilane based self-assembled monolayer and a low-k dielectric layer, wherein the organosilane based self-assembled monolayer is disposed atop the silicon-containing surface and the low-k dielectric layer is disposed atop the silicon surface, and wherein the organosilane based self-assembled monolayer is thermally stable at a first temperature of greater than about 300 degrees Celsius.
19. The semiconductor substrate of claim 18, wherein the organosilane based self-assembled monolayer comprises a C-8 to C-30 alkyl chain.
20. The semiconductor substrate of claim 18, wherein the low-k dielectric layer has a low-k value in an amount of about 2.5 to about 3.5.