Office Action 1: Non-Final Rejection (2024-03-12)
Rejection types: 103 - Obviousness

CLAIMS:
WHAT IS CLAIMED IS:

1\. A method, comprising:
heating a material including silver particles within an ultra-violet (UV) curable resin to obtain the UV curable resin on sintered silver particles, wherein at least a portion of the material is positioned between a chip and a submount; and
irradiating, with UV light, the UV curable resin to obtain a polymer on the sintered silver particles.
2\. The method of claim 1, wherein heating the material comprises sintering the silver particles within the UV curable resin, and
wherein sintering the silver particles within the UV curable resin pushes the UV curable resin toward an exterior surface of the material to obtain the UV curable resin on the sintered silver particles.
3\. The method of claim 1, wherein irradiating the UV curable resin comprises at least one of irradiating the UV curable resin for a continuous exposure period or irradiating the UV curable resin with pulses of the UV light.
4\. The method of claim 1, further comprising:
applying the material to at least one of the submount or the chip; and
positioning the chip on the submount.
5\. The method of claim 1, further comprising:
before irradiating the UV curable resin, cooling the UV curable resin on the sintered silver particles.
6\. The method of claim 1, wherein the sintered silver particles are sintered within the UV curable resin.
7\. The method of claim 1, wherein the silver particles are un-sintered prior to the heating.
8\. The method of claim 1, wherein a portion of the polymer forms a layer on an exterior surface of the sintered silver particles.
9\. The method of claim 8, wherein the layer is between 0.1 and 10 microns thick.

10\. The method of claim 8, wherein the layer is connected to a portion of one or more side surfaces of the chip and a top surface of the submount.

11\. A method, comprising:
placing a material between a chip and a submount, the material including un-sintered silver particles and an ultra-violet (UV) curable resin; heating the material to sinter the silver particles within the UV curable resin to produce sintered silver particles; and
irradiating, with UV light, the UV curable resin to produce a polymer on the sintered silver particles.

12\. The method of claim 11, wherein irradiating the UV curable resin comprises at least one of irradiating the UV curable resin for a continuous exposure period or irradiating the UV curable resin with pulses of the UV light.

13\. The method of claim 11, further comprising:
before irradiating the UV curable resin, cooling the UV curable resin on the sintered silver particles.

14\. The method of claim 11, wherein the sintered silver particles have a density of 10.49 grams/centimeter3, and
wherein the UV curable resin has a density of 1.00 grams/centimeter3.

15\. The method of claim 11, wherein the sintered silver particles are formed from at least one of microparticles or nanoparticles.

16\. The method of claim 11, wherein the UV curable resin comprises at least one of an epoxy-based resin, an acrylate-based resin, or a silicone-based resin.

17\. The method of claim 11, wherein a ratio, by weight, of the UV curable resin to the silver particles is between 0.05 and 1, and
the ratio is selected such that, when cured, a layer of the polymer on the sintered silver particles has a thickness in a range from 0.1 microns to 10 microns.

18\. The method of claim 11, wherein sintering the silver particles within the UV curable resin pushes the UV curable resin toward an exterior surface of the material to produce a layer of the UV curable resin on the sintered silver particles.

19\. The method of claim 18, wherein the layer is between 0.1 and 10 microns thick.

20\. The method of claim 18, wherein the layer is connected to a portion of one or more side surfaces of the chip and a top surface of the submount. 15 16 17 18

OFFICE ACTION:
DETAILED ACTION
Notice of Pre-AIA  or AIA  Status
1.	The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
2.	The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action:
A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made.
The factual inquiries for establishing a background for determining obviousness under 35 U.S.C. 103 are summarized as follows:
1. Determining the scope and contents of the prior art.
2. Ascertaining the differences between the prior art and the claims at issue.
3. Resolving the level of ordinary skill in the pertinent art.
4. Considering objective evidence present in the application indicating obviousness or non-obviousness.
3. 	Claims 1-4, 6, 8-12, 13-20 are rejected under 35 U.S.C. 103 as being un-patentable over Kajiwara et al., US 2011/0290863 A1, in view of Brodd et al., (US 2017/0267899 A1).
Claims 1, 2, 6, 8, 10-12 and 18. Kajiwara et al., disclose a method (such as the steps in fig. 2), comprising:
-heating a material including silver particles (this limitation would read through [0059], wherein is disclosed the sintering Ag paste is heated to 400.degree. C. in a non-oxidizing atmosphere, and makes metal Ag precipitate from the solution of the organic silver complex in the sintering Ag paste and sediment on a plated Ni face to form a metallizing Ag film 7 on the face);
-wherein at least a portion of the material is positioned between a chip (item 3) and a sub-mount (item 1).
Kajiwara appears to not explicitly disclose that the heating process is done “within an ultra-violet (UV) curable resin to obtain the UV curable resin on sintered silver particles, and irradiating, with UV light, the UV curable resin to obtain a polymer on the sintered silver particles”.
However, [0015] of Brodd et al., discloses that the cured resin layer can be formed from a curable (e.g. polymerizable) resin capable of being coated onto the conductive network and supporting substrate, followed by curing to form the cured resin layer. Desirable properties of the cured resin layer include the ability to form a self-supporting (e.g., free-standing) film, flexibility, conformability, stretchability (i.e. the film is elastomeric), adhesion to the conductive network and PSA layer, transparency, and a non-tacky surface after curing. Preferred polymerizable resins are photocurable resins, e.g. resins having photo-initiators and curable using visible or UV wavelengths. It would have been obvious to a person of ordinary skill in the art at the time the invention was made to recognize that combining Kajiwara’s process with Brodd's invention would have been beneficial because it gives the practitioner flexibility in using available ultra-violet (UV) technologies.
Claim 3. Kajiwara with Brodd et al., disclose the method of claim 1, wherein irradiating the UV curable resin comprises at least one of irradiating the UV curable resin for a continuous exposure period or irradiating the UV curable resin with pulses of the UV light. This limitation would read through [0018] of Brodd et al., wherein is disclosed that the curing of the curable resin layer preferably is done using a photocurable resin and visible or UV irradiation.
Claim 4. Kajiwara with Brodd et al., disclose the method of claim 1, further comprising: applying the material to at least one of the sub-mount (item 1) or the chip (item 3); and positioning the chip on the sub-mount, as seen in the structure of fig. 2 of Kajiwara.
Claim 15. Kajiwara with Brodd et al., disclose the method of claim 11, wherein the sintered silver particles are formed from at least one of microparticles or nanoparticles. This limitation would read through [0018] of Kajiwara et al., wherein is disclosed that the Ag nano-particle can be bonded to Cu and Ni with a certain degree of strength if a load is applied to the Ag nano-particle and adhesion is secured.
Claim 16. Kajiwara with Brodd et al., disclose the method of claim 11, wherein the UV curable resin comprises at least one of an epoxy-based resin, an acrylate-based resin, or a silicone-based resin. This limitation would read through [0018] of Kajiwara et al., wherein is disclosed that curing of the curable resin layer preferably is done using a photocurable resin and visible or UV irradiation.
Claim 20. Kajiwara with Brodd et al., disclose the method of claim 18, wherein the layer is connected to a portion of one or more side surfaces of the chip and a top surface of the sub-mount (as seen in the structure of fig. 2).
Claims 9, 14, 17 and 19. Kajiwara et al., disclose the device of claim 15, above.
Kajiwara appears to not explicitly disclose “wherein the layer is between 0.1 and 10 microns thick”, as in claim 9; “wherein the sintered silver particles have a density of 10.49 grams/centimeter, and wherein the UV curable resin has a density of 1.00 grams/centimeter”, as in claim 14; “wherein a ratio, by weight, of the UV curable resin to the silver particles is between 0.05 and 1, and the ratio is selected such that, when cured, a layer of the polymer on the sintered silver particles has a thickness in a range from 0.1 microns to 10 microns”, as in claim 17; “wherein the layer is between 0.1 and 10 microns thick”, as in claim 19.
However, [0021] of Brodd et al., discloses that a pressure sensitive adhesive (3M Double Coated Tape 9019 available from 3M, St. Paul, Minn.) was next laminated to the UV resin coating using a GHQ-320 PR3 laminator at 300 mm/min., leaving the release liner attached on the exposed adhesive side of the PSA. The UV resin layer was cured in a Fusion UV curing system (Fusion UV Systems, Gaithersburg, Md.), H bulb, at 6 feet/minute, power approximately 0.207 J/cm2.
To manufacture conductive adhesive tapes for the use in packaging integrated circuit products, such as microprocessors, storage circuits, three-dimensional (3D) chips, it would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains to form the adhesive with material wherein silver particles have a density of 10.49 grams/centimeter, and wherein the UV curable resin has a density of 1.00 grams/centimeter, and wherein a ratio, by weight, of the UV curable resin to the silver particles is in a range from 0.05 to 1.
Allowable Subject Matter
5.	Claims 5, 7, and 13 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims.
(A)	Claim 5 and 13, contain allowable subject matter because none of references of record teach or suggest, either singularly or in combination, at least the limitation of before irradiating the UV curable resin, cooling the UV curable resin on the sintered silver particles.
(B)	Claim 7 contains allowable subject matter because none of references of record teach or suggest, either singularly or in combination, at least the limitation of wherein the silver particles are un-sintered prior to the heating.
Conclusion

APPLICANT REBUTTAL: PATENT
REMARKS
Applicant addresses below the issues raised by the Office Action.
Statement Re
gar
din
g
Substance o
f
I
nte
r
view
Applicant submits that an interview occurred on May 28, 2024 with Applicant's
representative, Matthew Allen, and Examiner Jean Baptiste. Applicant appreciates the courtesies extended during the interview. During the interview, Applicant's representative discussed the claims, the rejection, the allowable subject matter, and proposed claim amendments. The Examiner agreed that the proposed amendments, substantially included in this response, should lead to allowance. The Examiner is also invited to call Applicant's representative to resolve any remaining issues if the Examiner believes the application is not in condition for allowance.
Allowable Sub
j
ect Matte
r
Applicant notes, with appreciation, the Examiner's indication that claims 5, 7, and 13 contain allowable subject matter.
Rej
ection under 35 U
.
S.C.
$
103 based on
KA
JIWARA and BRODD
Claims 1-4, 6, 8-12, and 14-20 stand rejected under 35 U.S.C. § 103 as allegedly being unpatentable over KAJIWARA and BRODD.
Claim 1 is being amended to incorporate the allowable subject matter of claim 7. For at least this reason, and the reasons presented in the interview and without acquiescing in the Examiner's rejection, the cited sections of the applied references, whether taken alone or in any reasonable combination, do not disclose at least "wherein the silver particles are un-sintered prior
PATENT
to the heating," as recited in claim 1, as amended. Independent claim 11, as amended, also recites features similar to the allowable subject matter of claim 7. Therefore, independent claims 1 and 11, and the claims that depend thereon, are patentable over the cited sections of the applied references, whether taken alone or in any reasonable combination.
Accordingly, Applicant respectfully requests that the Examiner reconsider and withdraw the rejection of claims 1-4, 6, 8-12, and 14-20 under 35 U.S.C. § 103 based on KAJIWARA and BRODD.
New Claim
New claim 21 recites the features of previously pending claim 1 and the allowable subject matter of claim 5. Therefore, new claim 21 is patentable for at least the inclusion of the allowable subject matter of claim 5.
Conclusion

NEXT OFFICE ACTION: DETAILED ACTION
Notice of Pre-AIA  or AIA  Status
1.	The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Response to Arguments
2.       The following rejections are incorporated from the office action sent on 03/12/2024, and are republished here for convenience.
Claim Rejections - 35 USC § 103
3.	The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action:
A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made.
The factual inquiries for establishing a background for determining obviousness under 35 U.S.C. 103 are summarized as follows:
1. Determining the scope and contents of the prior art.
2. Ascertaining the differences between the prior art and the claims at issue.
3. Resolving the level of ordinary skill in the pertinent art.
4. Considering objective evidence present in the application indicating obviousness or non-obviousness.
4. 	Claims 1-6, 8-21, are rejected under 35 U.S.C. 103 as being un-patentable over Kajiwara et al., US 2011/0290863 A1, in view of Brodd et al., (US 2017/0267899 A1).
Claims 1, 2, 6, 8, 10-11. Kajiwara et al., disclose a method (such as the steps in fig. 2), comprising:
-heating a material including silver particles (this limitation would read through [0059], wherein is disclosed the sintering Ag paste is heated to 400.degree. C. in a non-oxidizing atmosphere, and makes metal Ag precipitate from the solution of the organic silver complex in the sintering Ag paste and sediment on a plated Ni face to form a metallizing Ag film 7 on the face);
-wherein the silver particles are un-sintered prior to the heating (this limitation would read through [0061] wherein is disclosed (structure is formed, in which the sintered Ag layer in contact with a plated Ni film is a layer formed from Ag which has precipitated from the solution of the organic silver complex and has sedimented on the plated Ni film (sintered layer of organic silver complex +Ag particles), as by definition the term “un-sintered is defined as essentially an impregnated coating that is not fully fused during the process”.
-wherein at least a portion of the material is positioned between a chip (item 3) and a sub-mount (item 1).
Kajiwara appears to not explicitly disclose that the heating process is done “within an ultra-violet (UV) curable resin to obtain the UV curable resin on sintered silver particles, and irradiating, with UV light, the UV curable resin to obtain a polymer on the sintered silver particles”.
However, [0015] of Brodd et al., discloses that the cured resin layer can be formed from a curable (e.g., polymerizable) resin capable of being coated onto the conductive network and supporting substrate, followed by curing to form the cured resin layer. Desirable properties of the cured resin layer include the ability to form a self-supporting (e.g., free-standing) film, flexibility, conformability, stretchability (i.e., the film is elastomeric), adhesion to the conductive network and PSA layer, transparency, and a non-tacky surface after curing. Preferred polymerizable resins are photocurable resins, e.g., resins having photo-initiators and curable using visible or UV wavelengths. It would have been obvious to a person of ordinary skill in the art at the time the invention was made to recognize that combining Kajiwara’s process with Brodd's invention would have been beneficial because it gives the practitioner flexibility in using available ultra-violet (UV) technologies.
Claim 3. Kajiwara with Brodd et al., disclose the method of claim 1, wherein irradiating the UV curable resin comprises at least one of irradiating the UV curable resin for a continuous exposure period or irradiating the UV curable resin with pulses of the UV light. This limitation would read through [0018] of Brodd et al., wherein is disclosed that the curing of the curable resin layer preferably is done using a photocurable resin and visible or UV irradiation.
Claim 4. Kajiwara with Brodd et al., disclose the method of claim 1, further comprising: applying the material to at least one of the sub-mount (item 1) or the chip (item 3); and positioning the chip on the sub-mount, as seen in the structure of fig. 2, step 2 of Kajiwara.
Claim 5. Kajiwara with Brodd et al., disclose the method of claim 1, further comprising: before irradiating the UV curable resin, cooling the UV curable resin on the sintered silver particles. This limitation would read through [0064] of Kajiwara at the step of reducing atmosphere from 400.degree to 250.degree. C. for 1 hour.
Claim 12. Kajiwara with Brodd et al., disclose the method of claim 11, wherein irradiating the UV curable resin comprises at least one of irradiating the UV curable resin for a continuous exposure period or irradiating the UV curable resin with pulses of the UV light. This limitation would read through [0018] of Brodd et al., wherein is disclosed that the curing of the curable resin layer preferably is done using a photocurable resin and visible or UV irradiation.
Claim 13. Kajiwara with Brodd et al., disclose the method of claim 11, further comprising: before irradiating the UV curable resin, cooling the UV curable resin on the sintered silver particles, as seen in the structure of fig. 2, step 2 of Kajiwara.
Claim 15. Kajiwara with Brodd et al., disclose the method of claim 11, wherein the sintered silver particles are formed from at least one of microparticles or nanoparticles. This limitation would read through [0018] of Kajiwara et al., wherein is disclosed that the Ag nano-particle can be bonded to Cu and Ni with a certain degree of strength if a load is applied to the Ag nano-particle and adhesion is secured.
Claim 16. Kajiwara with Brodd et al., disclose the method of claim 11, wherein the UV curable resin comprises at least one of an epoxy-based resin, an acrylate-based resin, or a silicone-based resin. This limitation would read through [0018] of Kajiwara et al., wherein is disclosed that curing of the curable resin layer preferably is done using a photocurable resin and visible or UV irradiation.
Claim 18. Kajiwara with Brodd et al., disclose the method of claim 11, wherein sintering the un-sintered silver particles within the UV curable resin pushes the UV curable resin toward an exterior surface of the material to produce a layer of the UV curable resin on the sintered silver particles; (this limitation would read through [0061] wherein is disclosed (structure is formed, in which the sintered Ag layer in contact with a plated Ni film is a layer formed from Ag which has precipitated from the solution of the organic silver complex and has sedimented on the plated Ni film (sintered layer of organic silver complex +Ag particles), as by definition the term “un-sintered is defined as essentially an impregnated coating that is not fully fused during the process”.
Claim 20. Kajiwara with Brodd et al., disclose the method of claim 18, wherein the layer is connected to a portion of one or more side surfaces of the chip and a top surface of the sub-mount (as seen in the structure of fig. 2).
Claims 9, 14, 17 and 19. Kajiwara et al., disclose the device of claims 8 and 15, above.
Kajiwara appears to not explicitly disclose “wherein the layer is between 0.1 and 10 microns thick”, as in claim 9; “wherein the sintered silver particles have a density of 10.49 grams/centimeter, and wherein the UV curable resin has a density of 1.00 grams/centimeter”, as in claim 14; “wherein a ratio, by weight, of the UV curable resin to the silver particles is between 0.05 and 1, and the ratio is selected such that, when cured, a layer of the polymer on the sintered silver particles has a thickness in a range from 0.1 microns to 10 microns”, as in claim 17; “wherein the layer is between 0.1 and 10 microns thick”, as in claim 19.
However, [0021] of Brodd et al., discloses that a pressure sensitive adhesive (3M Double Coated Tape 9019 available from 3M, St. Paul, Minn.) was next laminated to the UV resin coating using a GHQ-320 PR3 laminator at 300 mm/min., leaving the release liner attached on the exposed adhesive side of the PSA. The UV resin layer was cured in a Fusion UV curing system (Fusion UV Systems, Gaithersburg, Md.), H bulb, at 6 feet/minute, power approximately 0.207 J/cm2.
To manufacture conductive adhesive tapes for the use in packaging integrated circuit products, such as microprocessors, storage circuits, three-dimensional (3D) chips, it would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains to form the adhesive with material wherein silver particles have a density of 10.49 grams/centimeter, and wherein the UV curable resin has a density of 1.00 grams/centimeter, and wherein a ratio, by weight, of the UV curable resin to the silver particles is in a range from 0.05 to 1.
Claim 21. Kajiwara discloses a method (such as the steps in fig. 2), comprising:
-heating a material including silver particles within an ultra-violet (UV) curable resin to obtain the UV curable resin on sintered silver particles, (this limitation would read through [0059], wherein is disclosed the sintering Ag paste is heated to 400.degree. C. in a non-oxidizing atmosphere, and makes metal Ag precipitate from the solution of the organic silver complex in the sintering Ag paste and sediment on a plated Ni face to form a metallizing Ag film 7 on the face);
-wherein at least a portion of the material is positioned between a chip (item 3) and a sub-mount (item 1);
-cooling the UV curable resin on the sintered silver particles, this limitation would read through [0064] of Kajiwara at the step of reducing atmosphere from 400.degree to 250.degree. C. for 1 hour.
Kajiwara appears to not explicitly disclose that the heating process is done “within an ultra-violet (UV) curable resin to obtain the UV curable resin on sintered silver particles, and irradiating, with UV light, the UV curable resin to obtain a polymer on the sintered silver particles”.
However, [0015] of Brodd et al., discloses that the cured resin layer can be formed from a curable (e.g., polymerizable) resin capable of being coated onto the conductive network and supporting substrate, followed by curing to form the cured resin layer. Desirable properties of the cured resin layer include the ability to form a self-supporting (e.g., free-standing) film, flexibility, conformability, stretchability (i.e., the film is elastomeric), adhesion to the conductive network and PSA layer, transparency, and a non-tacky surface after curing. Preferred polymerizable resins are photocurable resins, e.g., resins having photo-initiators and curable using visible or UV wavelengths. It would have been obvious to a person of ordinary skill in the art at the time the invention was made to recognize that combining Kajiwara’s process with Brodd's invention would have been beneficial because it gives the practitioner flexibility in using available ultra-violet (UV) technologies.
Response to Arguments
5.      Applicant's arguments filed 06/11/2024 based on allowable subject matter of claims 5 and 13, during the interview on May 28, 1024 with the Examiner, have been fully considered but they are not persuasive.
However, after a careful review of the claim, it is noted that the limitation of claim 5 “before irradiating the UV curable resin, cooling the UV curable resin on the sintered silver particles”. This limitation could read through [0064] of Kajiwara at the step of reducing atmosphere from 400.degree to 250.degree. C. for 1 hour. This step would also consider as a cooling step from a higher temperature to a lower temperature.
Regarding claim 8, that recites “a portion of the polymer forms a layer on an exterior surface of the sintered silver particles”. This limitation could read through [0086] of Kajiwara, wherein is disclosed that a thermosetting type of a liquid resin is applied to one or two sides of a fillet on a part jointed by sintered Ag, and is heated to and kept at a temperature of 40 to 80 degree. C., and the liquid resin having lowered viscosity is impregnated into a porous sintered Ag layer by a capillary phenomenon. After that, the liquid resin is heated to a temperature of 180 to 230.degree. C. and is cured or semi-cured (step S308). As noted, by definition that “resin is a type of polymer”. Thus, Examiner believes that the combination of Kajiwara with Brodd et al., disclose the present invention.
Conclusion
THIS ACTION IS MADE FINAL.  Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a).
A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action.  In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any extension fee pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action.  In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action.

CITED REFERENCE SUMMARIES: Ref US20110290863A1: Claims:
A sintering silver paste material comprising approximately spherical silver particles and an organic silver complex kneaded together into a slurry state. 2. The sintering silver paste material according to claim 1, wherein the approximately spherical silver particles have an average particle size of 0.1 to 2.0 μm. 3. The sintering silver paste material according to claim 1, wherein the paste material further comprises an organic solvent which dissolves the organic silver complex and is kneaded into a slurry state. 4. The sintering silver paste material according to claim 3, wherein the paste material comprises 80 to 90 wt % of the approximately spherical silver particles having an average particle size of 0.1 to 2.0 μm; 5 to 20 wt % of the organic silver complex; and 0 to 10 wt % of the organic solvent having a boiling point of 150° C. or higher and comprising C, H and O. 5. The sintering silver paste material according to claim 3, wherein the organic silver complex is a solution containing a liquid fatty acid silver salt compound or a solid fatty acid silver salt dissolved in an organic solvent having a boiling point of 150° C. or higher and comprising C, H and O, and a silver content in the whole liquid component is 30 wt % or more. 6. The sintering silver paste material according to claim 1, wherein the paste material further comprises 0 to 10 wt % of highly electroconductive particles having an average particle size of 10 to 500 μm and is kneaded into a slurry state. 7. The sintering silver paste material according to claim 6, wherein the highly electroconductive particle comprises any of Ag, Cu, Al, Mg, Ni, Mo and W as a core particle, and the outermost surface of the core particle comprises any material of Ag, Au and Pd. 8. The sintering silver paste material according to claim 1, wherein the paste material comprises 0 to 2 wt % of resin particles having an average particle size of 10 to 500 μm and having a precious metal film formed on the surface and is kneaded into a slurry state. 9. A method for bonding a semiconductor chip for die-bonding a semiconductor chip to a die pad, comprising: supplying a sintering silver paste material comprising approximately spherical silver particles and an organic silver complex kneaded together into a slurry state, onto a die pad having an Ni surface; mounting a semiconductor chip on the sintering silver paste material while pushing the chip onto the paste material; heating the paste material to 300 to 500° C. in a reducing atmosphere; and heating the paste material to 180 to 300° C. in an oxidizing atmosphere. 10. The method for bonding a semiconductor chip according to claim 9, comprising: applying the organic silver complex onto the die pad having an Ni surface, and supplying the sintering silver paste material onto the organic silver complex. 11. A method for bonding a semiconductor chip for die-bonding a semiconductor chip to a die pad, comprising: supplying a sintering silver paste material comprising approximately spherical silver particles and an organic silver complex kneaded together into a slurry state, onto a die pad having a Cu surface; mounting a semiconductor chip on the sintering silver paste material while pushing the chip onto the paste material; heating the paste material to 300 to 500° C. in a reducing atmosphere; heating the paste material to 180 to 300° C. in an oxidizing atmosphere; and heating the paste material to 200 to 400° C. in a reducing atmosphere. 12. The method for bonding a semiconductor chip according to claim 11, comprising: applying the organic silver complex onto the die pad having a Cu surface, and supplying the sintering silver paste material onto the organic silver complex.
A sintering silver paste material comprising approximately spherical silver particles and an organic silver complex kneaded together into a slurry state.
The sintering silver paste material according to claim 1, wherein the approximately spherical silver particles have an average particle size of 0.1 to 2.0 μm.
The sintering silver paste material according to claim 1, wherein the paste material further comprises an organic solvent which dissolves the organic silver complex and is kneaded into a slurry state.
The sintering silver paste material according to claim 3, wherein the paste material comprises 80 to 90 wt % of the approximately spherical silver particles having an average particle size of 0.1 to 2.0 μm; 5 to 20 wt % of the organic silver complex; and 0 to 10 wt % of the organic solvent having a boiling point of 150° C. or higher and comprising C, H and O.
The sintering silver paste material according to claim 3, wherein the organic silver complex is a solution containing a liquid fatty acid silver salt compound or a solid fatty acid silver salt dissolved in an organic solvent having a boiling point of 150° C. or higher and comprising C, H and O, and a silver content in the whole liquid component is 30 wt % or more.
The sintering silver paste material according to claim 1, wherein the paste material further comprises 0 to 10 wt % of highly electroconductive particles having an average particle size of 10 to 500 μm and is kneaded into a slurry state.
The sintering silver paste material according to claim 6, wherein the highly electroconductive particle comprises any of Ag, Cu, Al, Mg, Ni, Mo and W as a core particle, and the outermost surface of the core particle comprises any material of Ag, Au and Pd.
The sintering silver paste material according to claim 1, wherein the paste material comprises 0 to 2 wt % of resin particles having an average particle size of 10 to 500 μm and having a precious metal film formed on the surface and is kneaded into a slurry state.
A method for bonding a semiconductor chip for die-bonding a semiconductor chip to a die pad, comprising: supplying a sintering silver paste material comprising approximately spherical silver particles and an organic silver complex kneaded together into a slurry state, onto a die pad having an Ni surface; mounting a semiconductor chip on the sintering silver paste material while pushing the chip onto the paste material; heating the paste material to 300 to 500° C. in a reducing atmosphere; and heating the paste material to 180 to 300° C. in an oxidizing atmosphere.
The method for bonding a semiconductor chip according to claim 9, comprising: applying the organic silver complex onto the die pad having an Ni surface, and supplying the sintering silver paste material onto the organic silver complex.
A method for bonding a semiconductor chip for die-bonding a semiconductor chip to a die pad, comprising: supplying a sintering silver paste material comprising approximately spherical silver particles and an organic silver complex kneaded together into a slurry state, onto a die pad having a Cu surface; mounting a semiconductor chip on the sintering silver paste material while pushing the chip onto the paste material; heating the paste material to 300 to 500° C. in a reducing atmosphere; heating the paste material to 180 to 300° C. in an oxidizing atmosphere; and heating the paste material to 200 to 400° C. in a reducing atmosphere.
The method for bonding a semiconductor chip according to claim 11, comprising: applying the organic silver complex onto the die pad having a Cu surface, and supplying the sintering silver paste material onto the organic silver complex.
Ref US20170267899A1: Claims:
What is claimed is: 1. A process for preparing an electrically conductive, adhesive tape comprising: (a) providing an article comprising a substrate and a network of electrically conductive metal traces defining cells that are transparent to visible light on the substrate; (b) embedding the network of electrically conductive traces in a polymer matrix having a surface on which a pressure sensitive adhesive is deposited; and (c) removing the substrate to form the electrically conductive, adhesive tape. 2. The process of claim 1, comprising: (a) applying a UV-polymerizable composition onto the network of electrically conductive traces; (b) applying the pressure sensitive adhesive onto the UV-polymerizable composition; and (c) exposing the UV-polymerizable composition to ultraviolet radiation to polymerize the composition and form the polymer matrix in which the network of electrically conductive traces is embedded. 3. The process of claim 1, comprising: (a) applying a UV-polymerizable composition onto the network of electrically conductive traces; (b) exposing the UV-polymerizable composition to ultraviolet radiation to polymerize the composition and form the polymer matrix in which the network of electrically conductive traces is embedded; and (c) applying the pressure sensitive adhesive onto the polymer matrix in which the network of electrically conductive traces is embedded. 4. The process of claim 1, wherein the metal traces comprise a metal base and at least one electroplated or electrolessly plated metal layer over the metal base. 5. The process of claim 1, wherein the traces comprise at least partially joined metal nanoparticles. 6. An electrically conductive adhesive tape prepared according to the method of claim 1. 7. An electrically conductive adhesive tape comprising: (a) a polymer matrix having a first surface and a second surface; (b) a network of electrically conductive metal traces defining cells that are transparent to visible light embedded in the polymer matrix; and (c) a pressure sensitive adhesive deposited onto the second surface of the polymer matrix, wherein the network of electrically conductive metal traces is exposed on the first surface of the polymer matrix. 8. An electrically conductive adhesive tape according to claim 7 wherein the conductive metal traces comprise at least partially joined metal nanoparticles. 9. An electrically conductive adhesive tape according to claim 8 wherein the metal nanoparticles comprise silver nanoparticles. 10. An electrically conductive adhesive tape according to claim 7 wherein the polymer matrix comprises a cured (meth)acrylic resin. 11. An electrically conductive adhesive tape according to claim 7 wherein the visible light transmittance of the tape is greater than 60%. 12. An electrically conductive adhesive tape according to claim 7 wherein the visible light transmittance of the tape is greater than 70%. 13. An electrically conductive adhesive tape according to claim 7 wherein the visible light transmittance of the tape is greater than 75%. 14. An electrically conductive adhesive tape according to claim 7 wherein the sheet resistance of the tape is less than 10 Ohms/square. 15. An electrically conductive adhesive tape according to claim 7 wherein the sheet resistance of the tape is less than 1 Ohm/square. 16. An electrically conductive adhesive tape according to claim 7 wherein the sheet resistance of the tape is less than 0.1 Ohm/square. 17. An electrically conductive adhesive tape according to claim 7 wherein the overall thickness of the tape is less than 50 μm. 18. An electrically conductive adhesive tape according to claim 7 wherein the overall thickness of the tape is less than 30 μm. 19. An electrically conductive adhesive tape according to claim 7 wherein the overall thickness of the tape is less than 15 μm.
A process for preparing an electrically conductive, adhesive tape comprising: (a) providing an article comprising a substrate and a network of electrically conductive metal traces defining cells that are transparent to visible light on the substrate; (b) embedding the network of electrically conductive traces in a polymer matrix having a surface on which a pressure sensitive adhesive is deposited; and (c) removing the substrate to form the electrically conductive, adhesive tape.
The process of claim 1, comprising: (a) applying a UV-polymerizable composition onto the network of electrically conductive traces; (b) applying the pressure sensitive adhesive onto the UV-polymerizable composition; and (c) exposing the UV-polymerizable composition to ultraviolet radiation to polymerize the composition and form the polymer matrix in which the network of electrically conductive traces is embedded.
The process of claim 1, comprising: (a) applying a UV-polymerizable composition onto the network of electrically conductive traces; (b) exposing the UV-polymerizable composition to ultraviolet radiation to polymerize the composition and form the polymer matrix in which the network of electrically conductive traces is embedded; and (c) applying the pressure sensitive adhesive onto the polymer matrix in which the network of electrically conductive traces is embedded.
The process of claim 1, wherein the metal traces comprise a metal base and at least one electroplated or electrolessly plated metal layer over the metal base.
The process of claim 1, wherein the traces comprise at least partially joined metal nanoparticles.
An electrically conductive adhesive tape prepared according to the method of claim 1.
An electrically conductive adhesive tape comprising: (a) a polymer matrix having a first surface and a second surface; (b) a network of electrically conductive metal traces defining cells that are transparent to visible light embedded in the polymer matrix; and (c) a pressure sensitive adhesive deposited onto the second surface of the polymer matrix, wherein the network of electrically conductive metal traces is exposed on the first surface of the polymer matrix.
An electrically conductive adhesive tape comprising: (a) a polymer matrix having a first surface and a second surface; (b) a network of electrically conductive metal traces defining cells that are transparent to visible light embedded in the polymer matrix; and (c) a pressure sensitive adhesive deposited onto the second surface of the polymer matrix,
wherein the network of electrically conductive metal traces is exposed on the first surface of the polymer matrix.
An electrically conductive adhesive tape according to claim 7 wherein the conductive metal traces comprise at least partially joined metal nanoparticles.
An electrically conductive adhesive tape according to claim 8 wherein the metal nanoparticles comprise silver nanoparticles.
An electrically conductive adhesive tape according to claim 7 wherein the polymer matrix comprises a cured (meth)acrylic resin.
An electrically conductive adhesive tape according to claim 7 wherein the visible light transmittance of the tape is greater than 60%.
An electrically conductive adhesive tape according to claim 7 wherein the visible light transmittance of the tape is greater than 70%.
An electrically conductive adhesive tape according to claim 7 wherein the visible light transmittance of the tape is greater than 75%.
An electrically conductive adhesive tape according to claim 7 wherein the sheet resistance of the tape is less than 10 Ohms/square.
An electrically conductive adhesive tape according to claim 7 wherein the sheet resistance of the tape is less than 1 Ohm/square.
An electrically conductive adhesive tape according to claim 7 wherein the sheet resistance of the tape is less than 0.1 Ohm/square.
An electrically conductive adhesive tape according to claim 7 wherein the overall thickness of the tape is less than 50 μm.
An electrically conductive adhesive tape according to claim 7 wherein the overall thickness of the tape is less than 30 μm.
An electrically conductive adhesive tape according to claim 7 wherein the overall thickness of the tape is less than 15 μm.