Office Action 1: Non-Final Rejection (2024-05-09)
Rejection types: 103 - Obviousness, 112 - Written Description/Enablement

CLAIMS:
WHAT IS CLAIMED IS:

1\. A support unit for supporting a substrate, the support unit comprising:
a support plate on which a substrate is placed, and which includes an electrostatic electrode providing electrostatic force to the substrate;
a heater provided inside the support plate and configured to heat the substrate;
an insulating plate provided under the support plate as an insulating substance;
and a bimetal member disposed inside the support plate and configured to compensate for bending of the support plate due to heat, wherein the bimetal member includes:
a pin provided to be in contactable with a bottom surface of the substrate that is placed on the support plate;
a first member configured to support the pin; and
a second member provided to surround the first member, and
the pin is provided to move up or move down according to a difference in the amount of thermal deformation between the first member and the second member.

2\. The support unit of claim 1, wherein a movement direction of the pin according to the difference in the amount of thermal deformation between the first member and the second member is a direction opposite to a direction in which the support plate is bent according to a difference in the amount of thermal deformation between the support plate and the insulating plate in a region in which the bimetal member is provided.
3\. The support unit of claim 1, wherein a thermal deformation rate of the first member is different from a thermal deformation rate of the second member.

4\. The support unit of claim 3, wherein the thermal deformation rate of the first member is larger than the thermal deformation rate of the second member.

5\. The support unit of claim 1, wherein a volume of each of the first member and the second member is determined according to a difference in the amount of thermal deformation between the support plate and the insulating plate.

6\. The support unit of claim 1, wherein the difference in the amount of thermal deformation between the first member and the second member is determined according to a difference in the amount of thermal deformation between the support plate and the insulating plate.

7\. The support unit of claim 1, wherein a plurality of bimetal members is provided, and
each of the bimetal members is disposed in a hollow hole formed inside the support plate.

8\. The support unit of claim 7, wherein the support plate includes:
a dielectric plate on which the substrate is placed, and which includes the electrostatic electrode therein and is provided as a dielectric substance; and
a lower plate disposed under the dielectric plate and provided with a cooling flow path therein, and
the bimetal member is disposed in the hollow hole formed inside the dielectric plate.

9\. A support unit for supporting a substrate, the support unit comprising:
a first plate on which a substrate is placed;
a heater provided inside the first plate to heat the substrate;
a second plate provided under the first plate in a different material from a material of the first plate; and
a bimetal member disposed inside the first plate and configured to compensate for bending of the first plate, wherein the bimetal member includes:
a pin provided to be in contactable with a bottom surface of the substrate that is placed on the support plate;
a first member configured to support the pin; and
a second member provided to surround the first member, and
the pin is provided to move up or move down according to a difference in the amount of thermal deformation between the first member and the second member.

10\. The support unit of claim 9, wherein a movement direction of the pin according to the difference in the amount of thermal deformation between the first member and the second member is a direction opposite to a direction in which the first plate is bent according to a difference in the amount of thermal deformation between the first plate and the second plate in a region in which the bimetal member is provided.

11\. The support unit of claim 9, wherein a thermal deformation rate of the first member is different from a thermal deformation rate of the second member.

12\. The support unit of claim 12, wherein the thermal deformation rate of the first member is larger than the thermal deformation rate of the second member.

13\. The support unit of claim 9, wherein a volume of each of the first member and the second member is determined according to a difference in the amount of thermal deformation between the first plate and the second plate.

14\. The support unit of claim 9, wherein the difference in the amount of thermal deformation between the first member and the second member is determined according to a difference in the amount of thermal deformation between the first plate and the second plate.

15\. The support unit of claim 9, wherein the amount of thermal deformation of the plate is larger than the amount of thermal deformation of the second plate.

16\. The support unit of claim 9, wherein the first plate includes a dielectric substance, and the second plate includes an insulating substance.

17\. A substrate treating apparatus, comprising:
a dielectric plate on which a substrate is placed, and which includes an electrostatic electrode therein and is provided as a dielectric substance;
a lower plate disposed under the dielectric plate and provided with a cooling flow path therein;
a heater provided inside the dielectric plate to heat the substrate;
an insulating plate provided under the lower plate as an insulating substance; and a bimetal member disposed inside the dielectric plate and configured to compensate for bending of the dielectric plate due to heat, wherein the bimetal member includes:
a pin provided to be contactable with a bottom surface of the substrate that is placed on the dielectric plate;
a first member configured to support the pin; and
a second member provided to surround the first member, and
the pin is provided to move up or move down according to a difference in the amount of thermal deformation between the first member and the second member.

18\. The substrate treating apparatus of claim 17, wherein a movement direction of the pin according to the difference in the amount of thermal deformation between the first member and the second member is a direction opposite to a direction in which the dielectric plate is bent according to a difference in the amount of thermal deformation between the dielectric plate, the lower plate, and the insulating plate in a region in which the bimetal member is provided.

19\. The substrate treating apparatus of claim 17, wherein the amount of thermal deformation of the first member is larger than the amount of thermal deformation of the second member.
20\. The substrate treating apparatus of claim 17, wherein the difference in the amount of thermal deformation between the first member and the second member is determined according to a difference in the amount of thermal deformation between the dielectric plate, the lower plate. and the insulating plate. - 20 - - 21 - - 22 - - 23 - - 24 - - 25 -

OFFICE ACTION:
Detailed Correspondence
Notice of Pre-AIA  or AIA  Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Information Disclosure Statement
The information disclosure statement filed 02/14/2023 fails to comply with the provisions of 37 CFR 1.97, 1.98 and MPEP § 609 because no English translation of Notice of Allowance from Korean Application dated January 13, 2022 is provided.  It has been placed in the application file, but the information referred to therein has not been considered as to the merits.  Applicant is advised that the date of any re-submission of any item of information contained in this information disclosure statement or the submission of any missing element(s) will be the date of submission for purposes of determining compliance with the requirements based on the time of filing the statement, including all certification requirements for statements under 37 CFR 1.97(e).  See MPEP § 609.05(a).
Drawings
The drawings are objected to because reference number “100” are shows twice pointing to different parts (Fig. 1, left hand side, the lower one should be “210).  Corrected drawing sheets in compliance with 37 CFR 1.121(d) are required in reply to the Office action to avoid abandonment of the application. Any amended replacement drawing sheet should include all of the figures appearing on the immediate prior version of the sheet, even if only one figure is being amended. The figure or figure number of an amended drawing should not be labeled as “amended.” If a drawing figure is to be canceled, the appropriate figure must be removed from the replacement sheet, and where necessary, the remaining figures must be renumbered and appropriate changes made to the brief description of the several views of the drawings for consistency. Additional replacement sheets may be necessary to show the renumbering of the remaining figures. Each drawing sheet submitted after the filing date of an application must be labeled in the top margin as either “Replacement Sheet” or “New Sheet” pursuant to 37 CFR 1.121(d). If the changes are not accepted by the examiner, the applicant will be notified and informed of any required corrective action in the next Office action. The objection to the drawings will not be held in abeyance.
Specification
The disclosure is objected to because of the following informalities: “The dielectric plate 200” at the top of page 10 should be “The dielectric plate 220” .
Appropriate correction is required.
Claim Interpretations
The “a support plate on which a substrate is placed’ of claim 1, Applicants’ Fig. 2 shows the substrate W is above the support plate 210 and indirectly supported by the support plate 210 (directly supported by pin 1100) and will be examined accordingly.
Claim 16 recites “wherein the first plate includes a dielectric substance, and the second plate includes an insulating substance”, it is note that a dielectric substance is an insulating substance. Any minute difference in the first plate and the second plate is considered read into the claim.
It is also well-known that the bending of thermal expansion is between two adjacent layer that are connecting to each other (see also Applicants’ Fig. 8, bending due to thermal expansion difference between the dielectric plate 220 and the lower plate 230). As the lower plate 230 being a conductive material (with cooling channels), having a much larger thermal expansion difference than the dielectric/insulating substance. The examiner notices that the lower plate 230 and the dielectric plate 220 are lumped into the support plate 210 in claim 1. In claims 9-16, the lower plate is never mentioned. Therefore, it can be considered as either part of the dielectric plate 220 or part of the insulating plate 250.
The following limitations are considered a determination process for making the apparatus:
The “wherein a volume of each of the first member and the second member is determined according to a difference in the amount of thermal deformation between the support plate and the insulating plate” of claim 5,
the “wherein the difference in the amount of thermal deformation between the first member and the second member is determined according to a difference in the amount of thermal deformation between the support plate and the insulating plate“ of claim 6,
the “wherein a volume of each of the first member and the second member is determined according to a difference in the amount of thermal deformation between the first plate and the second plate” of claim 13,
the “wherein the difference in the amount of thermal deformation between the first member and the second member is determined according to a difference in the amount of thermal deformation between the first plate and the second plate” of claim 14,
the “wherein the difference in the amount of thermal deformation between the first member and the second member is determined according to a difference in the amount of thermal deformation between the dielectric plate, the lower plate. and the insulating plate” of claim 20,
the determination/decision before making the apparatus is not part of the structure of the apparatus.
Claim Rejections - 35 USC § 112
The following is a quotation of 35 U.S.C. 112(b):
(b)  CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention.
The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph:
The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention.
Claims 9-16 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA  35 U.S.C. 112, the applicant), regards as the invention.
Claim 9 recites “the support plate” in line 10, there is no antecedent basis for this term.
Claim 9 will be examined inclusive “the first plate” instead of “the support plate”
Claim 12 is rejected as it depends on itself.
Claim 15 recites “wherein the amount of thermal deformation of the plate is larger than the amount of thermal deformation of the second plate”, this raises an antecedent issue.
Furthermore, Applicants dielectric plate 220 seems to be the claimed first plate while the lower plate 230 seems to be the second plate. The lower plate 230 is a thermal conductor typical has larger thermal expansion than the dielectric first plate 220. The examiner cannot find exactly what material the lower plate 230 is and which conductor having a smaller thermal expansion than the dielectric plate 220.
Claim will be examined inclusive any plate in the support unit being compared to the second plate.
Dependent claims 10-16 are also rejected under USC 112(b) at least due to dependency to rejected claim 9.
Claim Rejections - 35 USC § 103
The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action:
A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made.
The factual inquiries for establishing a background for determining obviousness under 35 U.S.C. 103 are summarized as follows:
1. Determining the scope and contents of the prior art.
2. Ascertaining the differences between the prior art and the claims at issue.
3. Resolving the level of ordinary skill in the pertinent art.
4. Considering objective evidence present in the application indicating obviousness or nonobviousness.
Claims 1-20 are rejected under 35 U.S.C. 103 as being unpatentable over Hara et al. (JP H06333810, from IDS, hereafter ‘810), in view of Matyushkin et al. (US 20080017104, hereafter ‘104). (US 20110292562 is evidenced for ESC deformation due to thermal expansion difference).
‘810 teaches some limitations of:
Claim 1: A drop out preventing member 18 is incorporated in a substrate mounting stand 4 along a hole 10 provided to the substrate mounting stand 4 (abstract, includes the claimed “A support unit for supporting a substrate, the support unit comprising: a support plate on which a substrate is placed”);
a metal substrate mounting table 4 is arranged on the upper surface of the surface heating heater 2, and a heater pressing plate 6 is arranged on the lower surface thereof (middle of page 2, description applicable to the invention of ‘810, includes the claimed “a heater provided inside the support plate and configured to heat the substrate”);
the retaining member 18 made of bimetal in which two materials 28 and 30 having different thermal expansion coefficients are bonded to each other is attached to the built-in space 24 provided in the substrate mounting table 4 (middle of page 5), the retaining member is deformed as the temperature rises and extends downward from the head (middle of page 3, above [0015], includes the claimed “and a bimetal member disposed inside the support plate and configured to compensate for bending of the support plate due to heat”),
the proximity pins 12 functioning as substrate supporting members for supporting the substrate W in the holes 10 are respectively detachable (middle of page 2, includes the claimed “wherein the bimetal member includes: a pin provided to be in contactable with a bottom surface of the substrate that is placed on the support plate”; the two metal materials 28 and 30 is the claimed “a first member configured to support the pin; and a second member provided to surround the first member”),
at a high temperature, as shown in FIG. 8, when a part of the retaining member 18 is adjusted so as to contact the body portion 16 of the proximity pin 12 so as to tighten the proximity pin 12, the retaining member 18 causes the proxy to move (lower portion of page 5, includes the claimed “and the pin is provided to move up or move down according to a difference in the amount of thermal deformation between the first member and the second member”, as the temperature continue to rise, the thermal expansion difference is capable of moving the proximity pin 12 up and down).
‘810 does not teach the other limitations of:
Claim 1: (a support plate on which a substrate is placed), and which includes an electrostatic electrode providing electrostatic force to the substrate.
an insulating plate provided under the support plate as an insulating substance.
‘810 is silent on the wafer chucking mechanism and the material of the pressing plate 6.
‘104 is an analogous art in the field of SUBSTRATE PROCESSING WITH RAPID TEMPERATURE GRADIENT CONTROL (title), A substrate processing chamber comprises an electrostatic chuck comprising a ceramic puck having a substrate receiving surface and an opposing backside surface (abstract), including lift pins ([0052]). ‘104 teaches that The substrate 25 is held in the chamber 106 on a receiving surface 26 of a substrate support comprising an electrostatic chuck 20 which in turn rests on a base 91. The electrostatic chuck 20 comprises a ceramic puck 24 having a substrate receiving surface 26 which is the top surface of the puck 24, and serves to hold a substrate 25, as shown in FIGS. 1 and 2 ([0020]), The electrode 36 embedded in the ceramic puck 24 is used to generate an electrostatic force to retain a substrate placed on the substrate receiving surface 26 ([0022]), The base 91 comprises a metal body 92 ([0032], 2nd sentence, notice that the ceramic puck 24 and metal body 92 interface has a mismatch in thermal expansion). Note also the unlabeled layer between the metal body and the grounded chamber has to be an insulator to prevent short circuit as various power lines for electrode and heater passing through this layer.
Before the effective filing dates of the claimed invention, it would have been obvious to a person having ordinary skill in the art to have adopted an electrostatic chuck with an insulation plate in Fig. 1 of ‘104 as the mounting table 4 of ‘810, for its suitability for holding a substrate with predictable result. The selection of something based on its known suitability for its intended use has been held to support a prima facie case of obviousness. MPEP 2144.07. The combination is shown in illustration below.
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[AltContent: arrow][AltContent: textbox (First/
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‘810 also teaches some limitations of:
Claim 9: A drop out preventing member 18 is incorporated in a substrate mounting stand 4 along a hole 10 provided to the substrate mounting stand 4 (abstract, includes the claimed “A support unit for supporting a substrate, the support unit comprising: a first plate on which a substrate is placed”);
a metal substrate mounting table 4 is arranged on the upper surface of the surface heating heater 2, and a heater pressing plate 6 is arranged on the lower surface thereof (middle of page 2, description applicable to the invention of ‘810, includes the claimed “a heater provided inside the first plate to heat the substrate; a second plate provided under the first plate”);
the retaining member 18 made of bimetal in which two materials 28 and 30 having different thermal expansion coefficients are bonded to each other is attached to the built-in space 24 provided in the substrate mounting table 4 (middle of page 5), the retaining member is deformed as the temperature rises and extends downward from the head (middle of page 3, above [0015], includes the claimed “and a bimetal member disposed inside the first plate and configured to compensate for bending of the first plate”),
the proximity pins 12 functioning as substrate supporting members for supporting the substrate W in the holes 10 are respectively detachable (middle of page 2, includes the claimed “wherein the bimetal member includes: a pin provided to be in contactable with a bottom surface of the substrate that is placed on the support plate”); the two metal materials 28 and 30 is the claimed “a first member configured to support the pin; and a second member provided to surround the first member”),
at a high temperature, as shown in FIG. 8, when a part of the retaining member 18 is adjusted so as to contact the body portion 16 of the proximity pin 12 so as to tighten the proximity pin 12, the retaining member 18 causes the proxy to move (lower portion of page 5, includes the claimed “and the pin is provided to move up or move down according to a difference in the amount of thermal deformation between the first member and the second member”, as the temperature continue to rise, the thermal expansion difference is capable of moving the proximity pin 12 up and down).
‘810 does not teach the other limitations of:
Claim 9: a second plate provided under the first plate in a different material from a material of the first plate.
‘104 teaches the base 91 comprises a metal body 92 ([0032], 2nd sentence) as discussed above.
Before the effective filing dates of the claimed invention, it would have been obvious to a person having ordinary skill in the art to have adopted an electrostatic chuck in Fig. 1 of ‘104 that has a metal body 92 below the ceramic puck 24 as the mounting table 4 of ‘810, for its suitability for holding a substrate with predictable result. The selection of something based on its known suitability for its intended use has been held to support a prima facie case of obviousness. MPEP 2144.07.
‘810 also teaches some limitations of:
Claim 17: The present invention relates to a heat treatment apparatus for heating a substrate such as a rectangular glass substrate for liquid crystal or a semiconductor wafer ([0001], includes the claimed “A substrate treating apparatus, comprising”):
a metal substrate mounting table 4 is arranged on the upper surface of the surface heating heater 2, and a heater pressing plate 6 is arranged on the lower surface thereof (middle of page 2, description applicable to the invention of ‘810, includes the claimed “a heater provided to heat the substrate”);
A drop out preventing member 18 is incorporated in a substrate mounting stand 4 along a hole 10 provided to the substrate mounting stand 4 (abstract), the retaining member 18 made of bimetal in which two materials 28 and 30 having different thermal expansion coefficients are bonded to each other is attached to the built-in space 24 provided in the substrate mounting table 4 (middle of page 5), the retaining member is deformed as the temperature rises and extends downward from the head (middle of page 3, above [0015], includes the claimed “a bimetal member configured to compensate for bending of the dielectric plate due to heat”),
the proximity pins 12 functioning as substrate supporting members for supporting the substrate W in the holes 10 are respectively detachable (middle of page 2, includes the claimed “wherein the bimetal member includes: a pin provided to be in contactable with a bottom surface of the substrate”; the two metal materials 28 and 30 is the claimed “a first member configured to support the pin; and a second member provided to surround the first member”),
at a high temperature, as shown in FIG. 8, when a part of the retaining member 18 is adjusted so as to contact the body portion 16 of the proximity pin 12 so as to tighten the proximity pin 12, the retaining member 18 causes the proxy to move (lower portion of page 5, includes the claimed “and the pin is provided to move up or move down according to a difference in the amount of thermal deformation between the first member and the second member”, as the temperature continue to rise, the thermal expansion difference is capable of moving the proximity pin 12 up and down).
‘810 does not teach the other limitations of:
Claim 17: a dielectric plate on which a substrate is placed, and which includes an electrostatic electrode therein and is provided as a dielectric substance;
a lower plate disposed under the dielectric plate and provided with a cooling flow path therein;
(a heater provided inside) the dielectric plate (to heat the substrate);
an insulating plate provided under the lower plate as an insulating substance;
(a bimetal member disposed) inside the dielectric plate (and configured to compensate for bending of the dielectric plate due to heat),
(wherein the bimetal member includes: a pin provided to be contactable with a bottom surface of the substrate) that is placed on the dielectric plate;
‘104 is an analogous art as discussed above.
Before the effective filing dates of the claimed invention, it would have been obvious to a person having ordinary skill in the art to have adopted an electrostatic chuck in Fig. 1 of ‘104 as the mounting table 4 of ‘810, for its suitability for holding a substrate with predictable result. The selection of something based on its known suitability for its intended use has been held to support a prima facie case of obviousness. MPEP 2144.07.
‘810 further teaches the limitations of:
Claims 3 and 11: the retaining member 18 made of bimetal in which two materials 28 and 30 having different thermal expansion coefficients are bonded to each other is attached to the built-in space 24 provided in the substrate mounting table 4 (middle of page 5, includes the claimed “wherein a thermal deformation rate of the first member is different from a thermal deformation rate of the second member”).
Claims 4, 12, and 19: The retaining member 18 is made of a material having a coefficient of thermal expansion higher than that of the material of the substrate mounting table 4 (3rd complete paragraph of page 4, a supporting evidence), at a high temperature, as shown in FIG. 8, when a part of the retaining member 18 is adjusted so as to contact the body portion 16 of the proximity pin 12 so as to tighten the proximity pin 12, the retaining member 18 causes the proxy to move (lower portion of page 5, therefore, the material 30 has to have a higher thermal expansion to tighten the proximity pin, includes the claimed “wherein the thermal deformation rate of the first member is larger than the thermal deformation rate of the second member”).
Claims 5-6, 13-14, and 20: the determination process is not part of the apparatus, see claim interpretation above (the claimed “wherein a volume of each of the first member and the second member is determined according to a difference in the amount of thermal deformation between the support plate and the insulating plate” of claims 5/13 and “wherein the difference in the amount of thermal deformation between the first member and the second member is determined according to a difference in the amount of thermal deformation between the support plate and the insulating plate” of claims 6/14 and “wherein the difference in the amount of thermal deformation between the first member and the second member is determined according to a difference in the amount of thermal deformation between the dielectric plate, the lower plate. and the insulating plate” of claim 20). Furthermore, claims 5-6 do not include the specific relationship between the relationship between the volume of the two members and the difference in thermal deformation between the support plate and the insulating plate. A determination that no relationship between these two quantities is also a determination.
Claim 7: In the above embodiment, one retaining member 18 is arranged in each hole 10 to prevent the proximity pin 12 from coming out of the hole 10. As shown, one retaining member 18 may be arranged for every three holes 10 (bottom of page 5, before [0029], includes the claimed “wherein a plurality of bimetal members is provided, and each of the bimetal members is disposed in a hollow hole formed inside the support plate”).
The combination of ‘810 and ‘104 teaches the limitations of:
Claims 2, 10, and 18: As shown in the illustration above, Fig. 1 of ‘104 having the dielectric- metal-insulating structure same as Applicants’ FIG. 2, along with the thermal expansion relationship discussed in claim 4 above, the combination would have the property of “wherein a movement direction of the pin according to the difference in the amount of thermal deformation between the first member and the second member is a direction opposite to a direction in which the support plate is bent according to a difference in the amount of thermal deformation between the support plate and the insulating plate in a region in which the bimetal member is provided” of claims 2 and 10 and “wherein the difference in the amount of thermal deformation between the first member and the second member is determined according to a difference in the amount of thermal deformation between the dielectric plate, the lower plate. and the insulating plate” of claim 20.
Claim 8: The electrostatic chuck 20 comprises a ceramic puck 24 having a substrate receiving surface 26 which is the top surface of the puck 24, and serves to hold a substrate 25, as shown in FIGS. 1 and 2 (‘104, [0020]), The electrode 36 embedded in the ceramic puck 24 is used to generate an electrostatic force to retain a substrate placed on the substrate receiving surface 26, and optionally, to capacitively couple energy to the plasma formed in the chamber 106 ([0022], includes the claimed “wherein the support plate includes: a dielectric plate on which the substrate is placed, and which includes the electrostatic electrode therein and is provided as a dielectric substance”);
The base 91 has a coolant channel 110 ([0033], includes the claimed “and a lower plate disposed under the dielectric plate and provided with a cooling flow path therein”),
In the above embodiment, one retaining member 18 is arranged in each hole 10 to prevent the proximity pin 12 from coming out of the hole 10. As shown, one retaining member 18 may be arranged for every three holes 10, (‘810, bottom of page 5, before [0029], in the combination, the holes has to be in the imported ceramic puck 24 from ‘104, includes the claimed “and the bimetal member is disposed in the hollow hole formed inside the dielectric plate”).
Claim 15: by considering the base 91 and the ceramic puck 24 as the “plate”, it reads into the claimed “wherein the amount of thermal deformation of the plate is larger than the amount of thermal deformation of the second plate”.
Claim 16: the illustration above also shows that “wherein the first plate includes a dielectric substance, and the second plate includes an insulating substance”.
In case Applicants argue that ‘104 only teaches thermal expansion stresses that cause cracking ([0038]) but does not teach bending or deformation in regarding to claims 2, 10, and 18, and 5-6, 13-14, and 20. US 20110292562 is cited thermal expansion mismatch resulting bending or deformation (Figs. 3A-3B, [0004]).
Conclusion
The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. US 5914568 is cited for distortion due to thermal stress (Fig. 1, col. 1, lines 40-42).


NEXT OFFICE ACTION: Detailed Correspondence
Notice of Pre-AIA  or AIA  Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Response to Amendment
Applicants’ submission of amendment of the Specification and replacement drawing, filed on 08/07/2024, is acknowledged. Applicants’ submission, filed on 08/07/2024, in response to claims 1-20 rejection from the non-final office action (05/09/2024), by amending claims 1, 8-9, 12, 15, and 17 is entered and will be addressed below.
Specification
The disclosure is objected to because of the following informalities: “The dielectric plate 200” at the top of page 10 should be “The dielectric plate 220”.
Applicants’ submitted Specification amendment wrongly refers to page 19, line 1.
Appropriate correction is required.
Claim Interpretations
The “a support plate on which a substrate is placed’ of claim 1, Applicants’ Fig. 2 shows the substrate W is above the support plate 210 and indirectly supported by the support plate 210 (directly supported by pin 1100) and will be examined accordingly.
Claim 16 recites “wherein the first plate includes a dielectric substance, and the second plate includes an insulating substance”, it is note that a dielectric substance is an insulating substance. Any minute difference in the first plate and the second plate is considered read into the claim.
It is also well-known that the bending of thermal expansion is between two adjacent layer that are connecting to each other (see also Applicants’ Fig. 8, bending due to thermal expansion difference between the dielectric plate 220 and the lower plate 230). As the lower plate 230 being a conductive material (with cooling channels), having a much larger thermal expansion difference than the dielectric/insulating substance. The examiner notices that the lower plate 230 and the dielectric plate 220 are lumped into the support plate 210 in claim 1. In claims 9-16, the lower plate is never mentioned. Therefore, it can be considered as either part of the dielectric plate 220 or part of the insulating plate 250.
The following limitations are considered a determination process for making the apparatus:
The “wherein a volume of each of the first member and the second member is determined according to a difference in the amount of thermal deformation between the support plate and the insulating plate” of claim 5,
the “wherein the difference in the amount of thermal deformation between the first member and the second member is determined according to a difference in the amount of thermal deformation between the support plate and the insulating plate“ of claim 6,
the “wherein a volume of each of the first member and the second member is determined according to a difference in the amount of thermal deformation between the first plate and the second plate” of claim 13,
the “wherein the difference in the amount of thermal deformation between the first member and the second member is determined according to a difference in the amount of thermal deformation between the first plate and the second plate” of claim 14,
the “wherein the difference in the amount of thermal deformation between the first member and the second member is determined according to a difference in the amount of thermal deformation between the dielectric plate, the lower plate. and the insulating plate” of claim 20,
the determination/decision before making the apparatus is not part of the structure of the apparatus.
Claim Rejections - 35 USC § 103
The text of those sections of Title 35, U.S. Code not included in this action can be found in a prior Office action.
Claims 1-20 are rejected under 35 U.S.C. 103 as being unpatentable over Hara et al. (JP H06333810, from IDS, hereafter ‘810), in view of Matyushkin et al. (US 20080017104, hereafter ‘104). (US 20110292562 is evidenced for ESC deformation due to thermal expansion difference).
‘810 teaches some limitations of:
Claim 1: A drop out preventing member 18 is incorporated in a substrate mounting stand 4 along a hole 10 provided to the substrate mounting stand 4 (abstract, includes the claimed “A support unit for supporting a substrate, the support unit comprising: a support plate configured to support a substrate”);
a metal substrate mounting table 4 is arranged on the upper surface of the surface heating heater 2, and a heater pressing plate 6 is arranged on the lower surface thereof (middle of page 2, description applicable to the invention of ‘810, includes the claimed “a heater provided inside the support plate and configured to heat the substrate”);
the retaining member 18 made of bimetal in which two materials 28 and 30 having different thermal expansion coefficients are bonded to each other is attached to the built-in space 24 provided in the substrate mounting table 4 (middle of page 5), the retaining member is deformed as the temperature rises and extends downward from the head (Fig. 8, middle of page 3, above [0015], includes the claimed “and a bimetal member disposed inside the support plate and configured to compensate for bending of the support plate due to heat”),
the proximity pins 12 functioning as substrate supporting members for supporting the substrate W in the holes 10 are respectively detachable (middle of page 2, includes the claimed “wherein the bimetal member includes: a pin provided to be in contactable with a bottom surface of the substrate that is placed on the support plate”; the two metal materials 28 and 30 is the claimed “a first member configured to support the pin; and a second member provided to surround the first member”),
at a high temperature, as shown in FIG. 8, when a part of the retaining member 18 is adjusted so as to contact the body portion 16 of the proximity pin 12 so as to tighten the proximity pin 12, the retaining member 18 causes the proxy to move (lower portion of page 5, includes the claimed “and the pin is provided to move up or move down according to a difference in the amount of thermal deformation between the first member and the second member”, as the temperature continue to rise, the thermal expansion difference is capable of moving the proximity pin 12 up and down).
‘810 does not teach the other limitations of:
Claim 1: (a support plate configured to support a substrate), and which includes an electrostatic electrode providing electrostatic force to the substrate.
an insulating plate provided under the support plate as an insulating substance.
‘810 is silent on the wafer chucking mechanism and the material of the pressing plate 6.
‘104 is an analogous art in the field of SUBSTRATE PROCESSING WITH RAPID TEMPERATURE GRADIENT CONTROL (title), A substrate processing chamber comprises an electrostatic chuck comprising a ceramic puck having a substrate receiving surface and an opposing backside surface (abstract), including lift pins ([0052]). ‘104 teaches that The substrate 25 is held in the chamber 106 on a receiving surface 26 of a substrate support comprising an electrostatic chuck 20 which in turn rests on a base 91. The electrostatic chuck 20 comprises a ceramic puck 24 having a substrate receiving surface 26 which is the top surface of the puck 24, and serves to hold a substrate 25, as shown in FIGS. 1 and 2 ([0020]), The electrode 36 embedded in the ceramic puck 24 is used to generate an electrostatic force to retain a substrate placed on the substrate receiving surface 26 ([0022]), The base 91 comprises a metal body 92 ([0032], 2nd sentence, notice that the ceramic puck 24 and metal body 92 interface has a mismatch in thermal expansion). Note also the unlabeled layer between the metal body and the grounded chamber has to be an insulator to prevent short circuit as various power lines for electrode and heater passing through this layer.
Before the effective filing dates of the claimed invention, it would have been obvious to a person having ordinary skill in the art to have adopted an electrostatic chuck with an insulation plate in Fig. 1 of ‘104 as the mounting table 4 of ‘810, for its suitability for holding a substrate with predictable result. The selection of something based on its known suitability for its intended use has been held to support a prima facie case of obviousness. MPEP 2144.07. The combination is shown in illustration below.
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[AltContent: arrow][AltContent: textbox (First/
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‘810 also teaches some limitations of:
Claim 9: A drop out preventing member 18 is incorporated in a substrate mounting stand 4 along a hole 10 provided to the substrate mounting stand 4 (abstract, includes the claimed “A support unit for supporting a substrate, the support unit comprising: a first plate configured to support the substrate”);
a metal substrate mounting table 4 is arranged on the upper surface of the surface heating heater 2, and a heater pressing plate 6 is arranged on the lower surface thereof (middle of page 2, description applicable to the invention of ‘810, includes the claimed “a heater provided inside the first plate and configured to heat the substrate; a second plate provided under the first plate”);
the retaining member 18 made of bimetal in which two materials 28 and 30 having different thermal expansion coefficients are bonded to each other is attached to the built-in space 24 provided in the substrate mounting table 4 (middle of page 5), the retaining member is deformed as the temperature rises and extends downward from the head (middle of page 3, above [0015], includes the claimed “and a bimetal member disposed inside the first plate and configured to compensate for bending of the first plate”),
the proximity pins 12 functioning as substrate supporting members for supporting the substrate W in the holes 10 are respectively detachable (middle of page 2, includes the claimed “wherein the bimetal member includes: a pin provided to be in contactable with a bottom surface of the substrate that is placed on the first plate”); the two metal materials 28 and 30 is the claimed “a first member configured to support the pin; and a second member provided to surround the first member”),
at a high temperature, as shown in FIG. 8, when a part of the retaining member 18 is adjusted so as to contact the body portion 16 of the proximity pin 12 so as to tighten the proximity pin 12, the retaining member 18 causes the proxy to move (lower portion of page 5, includes the claimed “and the pin is provided to move up or move down according to a difference in the amount of thermal deformation between the first member and the second member”, as the temperature continue to rise, the thermal expansion difference is capable of moving the proximity pin 12 up and down).
‘810 does not teach the other limitations of:
Claim 9: a second plate provided under the first plate, the second plate comprising a different material from a material of the first plate.
‘104 teaches the base 91 comprises a metal body 92 ([0032], 2nd sentence) as discussed above.
Before the effective filing dates of the claimed invention, it would have been obvious to a person having ordinary skill in the art to have adopted an electrostatic chuck in Fig. 1 of ‘104 that has a metal body 92 below the ceramic puck 24 as the mounting table 4 of ‘810, for its suitability for holding a substrate with predictable result. The selection of something based on its known suitability for its intended use has been held to support a prima facie case of obviousness. MPEP 2144.07.
‘810 also teaches some limitations of:
Claim 17: The present invention relates to a heat treatment apparatus for heating a substrate such as a rectangular glass substrate for liquid crystal or a semiconductor wafer ([0001], includes the claimed “A substrate treating apparatus, comprising”):
a metal substrate mounting table 4 is arranged on the upper surface of the surface heating heater 2, and a heater pressing plate 6 is arranged on the lower surface thereof (middle of page 2, description applicable to the invention of ‘810, includes the claimed “a heater provided and configured to heat the substrate”);
A drop out preventing member 18 is incorporated in a substrate mounting stand 4 along a hole 10 provided to the substrate mounting stand 4 (abstract), the retaining member 18 made of bimetal in which two materials 28 and 30 having different thermal expansion coefficients are bonded to each other is attached to the built-in space 24 provided in the substrate mounting table 4 (middle of page 5), the retaining member is deformed as the temperature rises and extends downward from the head (middle of page 3, above [0015], includes the claimed “a bimetal member configured to compensate for bending of the dielectric plate due to heat”),
the proximity pins 12 functioning as substrate supporting members for supporting the substrate W in the holes 10 are respectively detachable (middle of page 2, includes the claimed “wherein the bimetal member includes: a pin provided to be in contactable with a bottom surface of the substrate”; the two metal materials 28 and 30 is the claimed “a first member configured to support the pin; and a second member provided to surround the first member”),
at a high temperature, as shown in FIG. 8, when a part of the retaining member 18 is adjusted so as to contact the body portion 16 of the proximity pin 12 so as to tighten the proximity pin 12, the retaining member 18 causes the proxy to move (lower portion of page 5, includes the claimed “and the pin is provided to move up or move down according to a difference in the amount of thermal deformation between the first member and the second member”, as the temperature continue to rise, the thermal expansion difference is capable of moving the proximity pin 12 up and down).
‘810 does not teach the other limitations of:
Claim 17: a dielectric plate configured to support the substrate, and which includes an electrostatic electrode therein and is provided as a dielectric substance;
a lower plate disposed under the dielectric plate and provided with a cooling flow path therein;
(a heater provided inside) the dielectric plate (and configured to heat the substrate);
an insulating plate provided under the lower plate as an insulating substance;
(a bimetal member disposed) inside the dielectric plate (and configured to compensate for bending of the dielectric plate due to heat),
(wherein the bimetal member includes: a pin provided to be contactable with a bottom surface of the substrate) that is placed on the dielectric plate;
‘104 is an analogous art as discussed above.
Before the effective filing dates of the claimed invention, it would have been obvious to a person having ordinary skill in the art to have adopted an electrostatic chuck in Fig. 1 of ‘104 as the mounting table 4 of ‘810, for its suitability for holding a substrate with predictable result. The selection of something based on its known suitability for its intended use has been held to support a prima facie case of obviousness. MPEP 2144.07.
‘810 further teaches the limitations of:
Claims 3 and 11: the retaining member 18 made of bimetal in which two materials 28 and 30 having different thermal expansion coefficients are bonded to each other is attached to the built-in space 24 provided in the substrate mounting table 4 (middle of page 5, includes the claimed “wherein a thermal deformation rate of the first member is different from a thermal deformation rate of the second member”).
Claims 4, 12, and 19: The retaining member 18 is made of a material having a coefficient of thermal expansion higher than that of the material of the substrate mounting table 4 (3rd complete paragraph of page 4, a supporting evidence), at a high temperature, as shown in FIG. 8, when a part of the retaining member 18 is adjusted so as to contact the body portion 16 of the proximity pin 12 so as to tighten the proximity pin 12, the retaining member 18 causes the proxy to move (lower portion of page 5, therefore, the material 30 has to have a higher thermal expansion to tighten the proximity pin, includes the claimed “wherein the thermal deformation rate of the first member is larger than the thermal deformation rate of the second member”).
Claims 5-6, 13-14, and 20: the determination process is not part of the apparatus, see claim interpretation above (the claimed “wherein a volume of each of the first member and the second member is determined according to a difference in the amount of thermal deformation between the support plate and the insulating plate” of claims 5/13 and “wherein the difference in the amount of thermal deformation between the first member and the second member is determined according to a difference in the amount of thermal deformation between the support plate and the insulating plate” of claims 6/14 and “wherein the difference in the amount of thermal deformation between the first member and the second member is determined according to a difference in the amount of thermal deformation between the dielectric plate, the lower plate. and the insulating plate” of claim 20). Furthermore, claims 5-6 do not include the specific relationship between the relationship between the volume of the two members and the difference in thermal deformation between the support plate and the insulating plate. A determination that no relationship between these two quantities is also a determination.
Claim 7: In the above embodiment, one retaining member 18 is arranged in each hole 10 to prevent the proximity pin 12 from coming out of the hole 10. As shown, one retaining member 18 may be arranged for every three holes 10 (bottom of page 5, before [0029], includes the claimed “wherein a plurality of bimetal members is provided, and each of the bimetal members is disposed in a hollow hole formed inside the support plate”).
The combination of ‘810 and ‘104 teaches the limitations of:
Claims 2, 10, and 18: As shown in the illustration above, Fig. 1 of ‘104 having the dielectric- metal-insulating structure same as Applicants’ FIG. 2, along with the thermal expansion relationship discussed in claim 4 above, the combination would have the property of “wherein a movement direction of the pin according to the difference in the amount of thermal deformation between the first member and the second member is a direction opposite to a direction in which the support plate is bent according to a difference in the amount of thermal deformation between the support plate and the insulating plate in a region in which the bimetal member is provided” of claims 2 and 10 and “wherein the difference in the amount of thermal deformation between the first member and the second member is determined according to a difference in the amount of thermal deformation between the dielectric plate, the lower plate. and the insulating plate” of claim 20.
Claim 8: The electrostatic chuck 20 comprises a ceramic puck 24 having a substrate receiving surface 26 which is the top surface of the puck 24, and serves to hold a substrate 25, as shown in FIGS. 1 and 2 (‘104, [0020]), The electrode 36 embedded in the ceramic puck 24 is used to generate an electrostatic force to retain a substrate placed on the substrate receiving surface 26, and optionally, to capacitively couple energy to the plasma formed in the chamber 106 ([0022], includes the claimed “wherein the support plate includes: a dielectric plate configured to support the substrate, and which includes the electrostatic electrode therein and is provided as a dielectric substance”);
The base 91 has a coolant channel 110 ([0033], includes the claimed “and a lower plate disposed under the dielectric plate and provided with a cooling flow path therein”),
In the above embodiment, one retaining member 18 is arranged in each hole 10 to prevent the proximity pin 12 from coming out of the hole 10. As shown, one retaining member 18 may be arranged for every three holes 10, (‘810, bottom of page 5, before [0029], in the combination, the holes has to be in the imported ceramic puck 24 from ‘104, includes the claimed “and the bimetal member is disposed in the hollow hole formed inside the dielectric plate”).
Claim 15: by considering the base 91 and the ceramic puck 24 as the “plate”, it reads into the claimed “wherein the amount of thermal deformation of the first plate is larger than the amount of thermal deformation of the second plate”.
Claim 16: the illustration above also shows that “wherein the first plate includes a dielectric substance, and the second plate includes an insulating substance”.
In case Applicants argue that ‘104 only teaches thermal expansion stresses that cause cracking ([0038]) but does not teach bending or deformation in regarding to claims 2, 10, and 18, and 5-6, 13-14, and 20. US 20110292562 is cited thermal expansion mismatch resulting bending or deformation (Figs. 3A-3B, [0004]).
Response to Arguments
Applicant's arguments filed 08/07/2024 have been fully considered but they are not persuasive.
In regarding drawing objection, see lower portion of page 11, Applicants’ replacement drawing overcomes the objection.
In regarding to objection of the Specification, see the bottom of page 11, Applicants’ amendment of the Specification includes an error.
In regarding to 112(b) rejection, see the upper part of page 12, Applicants’ amendment overcomes the rejection.
In regarding to 103 rejection over ‘810 in view of ‘104, Applicants argue that “at a high temperature, as shown in FIG. 8, when a part of the retaining member 18 is adjusted so as to contact the body portion 16 of the proximity pin 12 so as to tighten the proximity pin 12, the retaining member 18 causes the proxy to move” is not proximity pin is moving because the proximity pin 12 is secured in place, see page 13.
This argument is found not persuasive.
The difference in thermal expansion of two material 28 and 30 intrinsically will move the pin 12 due to change of temperature. ‘562 is cited as evidence in previous OC already. See also ‘432 in the conclusion.
The examiner invites Applicants to point out what component is proxy? Applicants might want to provide their own English translation of ‘810 to show that proxy is a different component than the proximity pin 12. Furthermore, that the proximity pin is unmovable even during temperature change.
Secured in place (Applicants’ own word) does not exclude movement due to temperature change. Likewise, Applicants’ own bimetal member 1000 is secured in place (Fig. 2) but it moves due to thermal expansion to compensate the thermal expansion of the support plate.
Conclusion
The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. US 20110076432 is cited for bimetal moves in response to a temperature change ([0008]).
US 5914568 is cited for distortion due to thermal stress (Fig. 1, col. 1, lines 40-42).
THIS ACTION IS MADE FINAL.  Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a).
A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action.  In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any extension fee pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action.  In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action.

CITED REFERENCE SUMMARIES: Ref US20080017104A1: Claims:
A substrate support assembly capable of holding and heating a substrate in a process chamber, the assembly comprising: (a) a ceramic puck comprising a substrate receiving surface and an opposing backside surface, the ceramic puck comprising (i) an electrode embedded in the ceramic puck to generate an electrostatic force to retain a substrate placed on the substrate receiving surface, and (ii) a heater embedded in the ceramic puck to heat the substrate; (b) a coolant base comprising a coolant channel to circulate coolant therethrough, the channel comprising an inlet and terminus; (c) a compliant layer bonding the ceramic puck to the coolant base, the compliant layer comprising at least one of (i) silicon having embedded aluminum fibers, or (ii) acrylic having an embedded wire mesh.
(a) a ceramic puck comprising a substrate receiving surface and an opposing backside surface, the ceramic puck comprising (i) an electrode embedded in the ceramic puck to generate an electrostatic force to retain a substrate placed on the substrate receiving surface, and (ii) a heater embedded in the ceramic puck to heat the substrate;
(b) a coolant base comprising a coolant channel to circulate coolant therethrough, the channel comprising an inlet and terminus;
(c) a compliant layer bonding the ceramic puck to the coolant base, the compliant layer comprising at least one of (i) silicon having embedded aluminum fibers, or (ii) acrylic having an embedded wire mesh.
A support assembly according to claim 1 wherein the inlet and terminus of the coolant channel are adjacent to one another and the coolant channel loops back upon itself.
A support assembly according to claim 2 wherein the opposing backside surface of the ceramic puck comprises a plurality of spaced apart mesas, with first mesas adjacent to the inlet of the coolant channel and second mesas that being distal from the inlet of the coolant channel, and wherein: (i) the first mesas are spaced apart a first distance that is smaller than a second distance between the second mesas; or (ii) the first mesas have a first contact area that is larger than a second contact area of the second mesas.
(i) the first mesas are spaced apart a first distance that is smaller than a second distance between the second mesas; or
(ii) the first mesas have a first contact area that is larger than a second contact area of the second mesas.
A support assembly according to claim 1 wherein the ceramic puck comprises a thickness of less than about 7 mm.
A support assembly according to claim 1 wherein the ceramic puck comprises a thickness of from about 4 to about 7 mm.
A support assembly according to claim 1 wherein the ceramic puck is composed of aluminum oxide.
A support assembly according to claim 6 wherein the electrodes and heater comprise tungsten or molybdenum.
A support assembly according to claim 1 where the heater comprises first and second coils that are radially spaced apart and concentric about one another, the first coil located at a peripheral portion of the ceramic puck and the second coil located at a central portion of the ceramic puck, and the first and second coils comprise a total resistance of less than 10 Ohms.
A support assembly according to claim 1 wherein the heater comprises a resistance of about 8.5 ohms.
A support assembly according to claim 1 wherein the heater comprises a coil having first loops spaced apart a first distance and second loops spaced apart a second distance that is greater than the first distance.
A support assembly according to claim 10 wherein the second loops are positioned about a lift pin hole in the ceramic.
An electrostatic chuck capable of holding and heating a substrate in a process chamber, the electrostatic chuck comprising: (a) a ceramic puck comprising a substrate receiving surface and an opposing backside surface, the ceramic puck comprising a thickness that is less than about 7 mm; (b) an electrode embedded in the ceramic puck to generate an electrostatic force to retain a substrate placed on the substrate receiving surface, and (c) a heater embedded in the ceramic puck to heat a substrate received on the substrate receiving surface.
(a) a ceramic puck comprising a substrate receiving surface and an opposing backside surface, the ceramic puck comprising a thickness that is less than about 7 mm;
(b) an electrode embedded in the ceramic puck to generate an electrostatic force to retain a substrate placed on the substrate receiving surface, and
(c) a heater embedded in the ceramic puck to heat a substrate received on the substrate receiving surface.
An chuck according to claim 12 wherein the ceramic puck comprises a thickness of from about 4 to about 7 mm.
An chuck according to claim 12 wherein: (i) the ceramic puck is composed of aluminum oxide; and (ii) the electrode and heater are composed of tungsten or molybdenum.
(i) the ceramic puck is composed of aluminum oxide; and
(ii) the electrode and heater are composed of tungsten or molybdenum.
An chuck according to claim 1 wherein the opposing backside surface of the ceramic puck comprises a plurality of spaced apart mesas, with a first group of mesas and a second group of mesas, and wherein: (i) the first mesas are spaced apart a first distance that is smaller than a second distance between the second mesas; or (ii) the first mesas have a first contact dimension that is larger than a second contact dimension of the second mesas.
(ii) the first mesas have a first contact dimension that is larger than a second contact dimension of the second mesas.
A compliant layer for bonding a ceramic puck comprising an electrode and a heater to a coolant base comprising a coolant channel to circulate coolant therethrough, the compliant layer comprising at least one of: (a) silicon having embedded aluminum fibers, or (b) acrylic having an embedded wire mesh.
(a) silicon having embedded aluminum fibers, or
(b) acrylic having an embedded wire mesh.
A substrate processing apparatus comprising: (a) a process chamber comprising a substrate support mounted therein, the substrate support comprising: (i) a ceramic puck with an electrode and a heater; (ii) a base below the ceramic puck, the base comprising coolant channels; and (iii) a chiller to maintain a coolant at a preset temperature, the coolant provided to the channels of the base; (b) a gas distributor to provide a process gas to the process chamber; (c) a gas energizer to energize the process gas; and (d) a gas exhaust port through which to exhaust the process gas from the chamber; and (e) a controller comprising temperature control instruction sets that include code to (i) increase a coolant temperature in the chiller to a higher level prior to ramping up the power level applied to the heater in the ceramic puck, or (ii) decrease a coolant temperature in the chiller to a lower level prior to ramping down the power level applied to the heater in the ceramic puck, whereby the temperature of the substrate can be ramped up or down at a faster rate.
(a) a process chamber comprising a substrate support mounted therein, the substrate support comprising: (i) a ceramic puck with an electrode and a heater; (ii) a base below the ceramic puck, the base comprising coolant channels; and (iii) a chiller to maintain a coolant at a preset temperature, the coolant provided to the channels of the base;
(i) a ceramic puck with an electrode and a heater;
(ii) a base below the ceramic puck, the base comprising coolant channels; and
(iii) a chiller to maintain a coolant at a preset temperature, the coolant provided to the channels of the base;
(b) a gas distributor to provide a process gas to the process chamber;
(c) a gas energizer to energize the process gas; and
(d) a gas exhaust port through which to exhaust the process gas from the chamber; and
(e) a controller comprising temperature control instruction sets that include code to (i) increase a coolant temperature in the chiller to a higher level prior to ramping up the power level applied to the heater in the ceramic puck, or (ii) decrease a coolant temperature in the chiller to a lower level prior to ramping down the power level applied to the heater in the ceramic puck, whereby the temperature of the substrate can be ramped up or down at a faster rate.
An apparatus according to claim 17 wherein the temperature control instruction sets include code to change a coolant temperature in the chiller to a higher level at least about 1 second before ramping up or ramping down the power level applied to the heater in the ceramic puck.
An apparatus according to claim 17 wherein the temperature control instruction sets include code to change the coolant temperature by at least about 10Â° C.
An apparatus according to claim 17 wherein the ceramic puck is bonded to the base by a compliant layer comprising at least one of (i) silicon having embedded aluminum fibers, or (ii) acrylic having an embedded wire mesh.
Ref US20110292562A1: Claims:
An electrostatic clamp for selectively maintaining a position of a workpiece, the electrostatic clamp comprising: a backing plate for providing structural support and rigidity to the electrostatic clamp, wherein the backing plate has a first coefficient of thermal expansion associated therewith; and a clamping plate having a clamping surface configured to contact the workpiece, wherein the clamping plate has a second coefficient of thermal expansion associated therewith, wherein the clamping plate is bonded to the backing plate, and wherein the first coefficient of thermal expansion and second coefficient of thermal expansion are minimized, with a maximum difference determined by the geometry of the electrostatic clamp.
a backing plate for providing structural support and rigidity to the electrostatic clamp, wherein the backing plate has a first coefficient of thermal expansion associated therewith; and
a clamping plate having a clamping surface configured to contact the workpiece, wherein the clamping plate has a second coefficient of thermal expansion associated therewith, wherein the clamping plate is bonded to the backing plate, and wherein the first coefficient of thermal expansion and second coefficient of thermal expansion are minimized, with a maximum difference determined by the geometry of the electrostatic clamp.
The electrostatic clamp of claim 1 , wherein the backing plate comprises a metal, therein defining a metallic backing plate, and wherein the clamping plate comprises a ceramic material, therein defining a ceramic clamping plate.
The electrostatic clamp of claim 2 , wherein the metallic backing plate is comprised of titanium, and wherein the ceramic clamping plate is comprised of aluminum nitride.
The electrostatic clamp of claim 2 , wherein the metallic backing plate is comprised of titanium, and wherein the ceramic clamping plate is comprised of aluminum oxide.
The electrostatic clamp of claim 1 , wherein the backing plate is comprised of silicon carbide, and wherein the ceramic clamping plate is comprised of aluminum nitride.
The electrostatic clamp of claim 1 , wherein the backing plate comprises one or more coolant channels configured to circulate a coolant fluid therethrough, therein controlling a temperature of the electrostatic clamp.
A method for manufacturing an electrostatic clamp, the method comprising: selecting a metallic backing plate material having a first coefficient of thermal expansion; selecting a ceramic clamping plate material having a second coefficient of thermal expansion, wherein the first coefficient of thermal expansion and second coefficient of thermal expansion are minimized, with a maximum difference determined by the geometry of the electrostatic clamp; and bonding, attaching, or growing the ceramic clamping plate on to the backing plate.
selecting a metallic backing plate material having a first coefficient of thermal expansion;
selecting a ceramic clamping plate material having a second coefficient of thermal expansion, wherein the first coefficient of thermal expansion and second coefficient of thermal expansion are minimized, with a maximum difference determined by the geometry of the electrostatic clamp; and
bonding, attaching, or growing the ceramic clamping plate on to the backing plate.
The method of claim 7 , wherein the selection of the metallic backing plate material and the ceramic clamping plate material is based on a predetermined temperature range in which the electrostatic clamp is configured to operate.
The method of claim 7 , wherein the first coefficient of thermal expansion and second coefficient of thermal expansion vary by no greater than factor of three.
An electrostatic clamp for selectively maintaining a position of a workpiece, the electrostatic clamp comprising: a backing plate for providing structural support and rigidity to the electrostatic clamp, the backing plate having a first coefficient of thermal expansion associated therewith; a clamping plate for providing a clamping surface to selectively contact the workpiece, the clamping plate having a second coefficient of thermal expansion associated therewith, wherein the clamping plate is bonded, attached or grown on to the backing plate, and wherein a difference between the first coefficient of thermal expansion and second coefficient of thermal expansion is minimized with a maximum difference determined by the geometry of the electrostatic clamp.
a backing plate for providing structural support and rigidity to the electrostatic clamp, the backing plate having a first coefficient of thermal expansion associated therewith;
a clamping plate for providing a clamping surface to selectively contact the workpiece, the clamping plate having a second coefficient of thermal expansion associated therewith, wherein the clamping plate is bonded, attached or grown on to the backing plate, and wherein a difference between the first coefficient of thermal expansion and second coefficient of thermal expansion is minimized with a maximum difference determined by the geometry of the electrostatic clamp.
An electrostatic clamp for selectively maintaining a position of a workpiece, the electrostatic clamp comprising: a metallic backing plate having a first coefficient of thermal expansion associated therewith, wherein the backing plate provides structural support and rigidity to the electrostatic clamp; and a ceramic clamping plate having a clamping surface configured to contact the workpiece, wherein the clamping plate has a second coefficient of thermal expansion associated therewith, and wherein the clamping plate is bonded to the backing plate, wherein the first coefficient of thermal expansion and second coefficient of thermal expansion vary by no greater than a factor of three.
a metallic backing plate having a first coefficient of thermal expansion associated therewith, wherein the backing plate provides structural support and rigidity to the electrostatic clamp; and
a ceramic clamping plate having a clamping surface configured to contact the workpiece, wherein the clamping plate has a second coefficient of thermal expansion associated therewith, and wherein the clamping plate is bonded to the backing plate, wherein the first coefficient of thermal expansion and second coefficient of thermal expansion vary by no greater than a factor of three.
The electrostatic clamp of claim 11 , wherein the metallic backing plate is comprised of titanium and the ceramic clamping plate is comprised of aluminum nitride.
The electrostatic clamp of claim 11 , wherein the metallic backing plate is comprised of silicon carbide, and the ceramic clamping plate is comprised of aluminum nitride.
The electrostatic clamp of claim 11 , wherein the metallic backing plate is comprised of titanium, and wherein the ceramic clamping plate is comprised of aluminum oxide.
A method for manufacturing an electrostatic clamp, the method comprising: selecting a backing plate metallic material having a first coefficient of thermal expansion; selecting a clamping plate ceramic material having a second coefficient of thermal expansion, wherein the first coefficient of thermal expansion and second coefficient of thermal expansion vary by no greater than a factor of three; and bonding, attaching, or growing the ceramic clamping plate on to the backing plate.
selecting a backing plate metallic material having a first coefficient of thermal expansion;
selecting a clamping plate ceramic material having a second coefficient of thermal expansion, wherein the first coefficient of thermal expansion and second coefficient of thermal expansion vary by no greater than a factor of three; and
The method of claim 15 , wherein the selection of the backing plate metallic material and the clamping plate ceramic material is based on a predetermined temperature range.
Ref US5914568A: Claims:
I claim: 1. A plasma processing apparatus for processing a target substrate, using a plasma, comprising:an airtight process chamber; exhaust means for exhausting and setting said process chamber into a vacuum state; process gas supply means for supplying a process gas into said process chamber; an electric-field generator for generating an RF electric field in said process chamber to convert said process gas into plasma; a worktable arranged in said process chamber and having a mount surface for supporting said target substrate; an electrostatic chuck fixed to said mount surface, for attracting and holding said target object, said electrostatic chuck comprising at least three chuck segments arranged with a gap interposed therebetween so as to separate said at least three chuck segments from each other, and to prevent said electrostatic chuck from being distorted due to thermal stress, each chuck segment having a pair of insulating ceramic layers and a conductive layer sandwiched therebetween; and a DC power supply section for supplying said conductive layer of each chuck segment with a DC electric potential. 2. The apparatus according to claim 1, wherein said DC power supply section is arranged to substantially simultaneously supply the conductive layers of said at least three chuck segments with DC electric potentials substantially the same as each other. 3. The apparatus according to claim 1, wherein said at least three chuck segments are arranged in an angular direction relative to a center of said mount surface. 4. The apparatus according to claim 1, wherein said at least three chuck segments have substantially the same shape. 5. The apparatus according to claim 1, wherein said electrostatic chuck comprises an inner chuck segment and an outer chuck section concentrically arranged relative to a center of said mount surface with a gap interposed therebetween to prevent said electrostatic chuck from being distorted due to thermal stress, said outer chuck section comprising said at least three chuck segments, said inner chuck segment having a pair of insulating ceramic layers and a conductive layer sandwiched therebetween, said DC power supply section being arranged to supply the conductive layer of said inner chuck segment with a DC electric potential. 6. The apparatus according to claim 5, wherein said DC power supply section is arranged to substantially simultaneously supply the conductive layers of said at least three chuck segments and said inner chuck segment with DC electric potentials substantially the same as each other. 7. The apparatus according to claim 5, wherein said at least three chuck segments are arranged in an angular direction relative to a center of said mount surface. 8. The apparatus according to claim 7, wherein said at least three chuck segments have substantially the same shape. 9. The apparatus according to claim 1, comprising heat transfer gas supply means for supplying a heat transfer gas into an interstice between said electrode chuck and said target object mounted thereon, wherein said heat transfer gas suppl
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