Office Action 1: Non-Final Rejection (2025-02-11)
Rejection types: 112 - Written Description/Enablement

CLAIMS:
Claims

What is claimed is:

1\. A wet clean apparatus for a single wafer, comprising:
a wafer bearing platform having a rotation function, used for placement of a wafer and rotation of the wafer;
an etchant injection apparatus used for injecting an etchant onto the surface of the wafer; and
a baffle arranged on the periphery of the wafer bearing platform;
the baffle comprising an anti-splash structure used for decelerating the etchant shaken off from the wafer;
the anti-splash structure comprising:
a first vertical plate, wherein the length direction of the first vertical plate is perpendicular to the surface of the wafer, and there is a spacing between the inner side surface of the first vertical plate and the wafer;
a first opening transversely passing through the first vertical plate, wherein the first opening is arranged on a movement track of the etchant shaken off from the surface of the wafer so that the etchant passes through the first opening; and
a second transverse plate, wherein a first end of the second transverse plate is fixedly arranged on the outer side surface of the first vertical plate; the top surface of the second transverse plate is horizontal and the top surface of the second transverse plate is lower than or flush with the bottom surface of the first opening, and the etchant passing through the first opening flows on the top surface of the second transverse plate so that the etchant undergoes a first time of deceleration.

2\. The wet clean apparatus for a single wafer according to claim 1, wherein the anti-splash structure further comprises:
a third inclined plate, wherein a first end of the third inclined plate is fixedly arranged on a second end of the second transverse plate; the top surface of the third inclined plate presents a slope structure, a lowest end of the top surface of the third inclined plate is flush with the top surface of the second transverse plate, and the etchant flows from the top surface of the second transverse plate to the lowest end of the top surface of the third inclined plate and then gradually rises along the slope structure to realize a second time of deceleration.

3\. The wet clean apparatus for a single wafer according to claim 2, wherein the anti-splash structure further comprises:
a fourth arc plate, wherein a first end of the fourth arc plate is fixedly arranged on a second end of the third inclined plate, the top surface of the fourth arc plate presents an arc structure, a lowest end of the top surface of the fourth arc plate is flush with a topmost end of the top surface of the third inclined plate, and the etchant flows from the top surface of the third inclined plate to the lowest end of the top surface of the fourth arc plate and then moves along the arc slope structure to realize a third time of deceleration.

4\. The wet clean apparatus for a single wafer according to claim 3, wherein a track of the arc structure is a semi-circle or semi-ellipse.

5\. The wet clean apparatus for a single wafer according to claim 3, wherein in a transverse direction, a second end of the arc structure is located between the first end and the second end of the third inclined plate, so that the etchant undergoing the deceleration realized by the arc structure flows back to the third inclined plate.

6\. The wet clean apparatus for a single wafer according to claim 5, wherein the baffle further comprises a recovery structure for collecting the etchant, the recovery structure comprising:
a second opening vertically passing through the second transverse plate, wherein the decelerated etchant passes through the second opening and flows downward to realize recovery.

7\. The wet clean apparatus for a single wafer according to claim 6, wherein the recovery structure further comprises:
a fifth vertical plate, wherein a top end of the fifth vertical plate is fixedly arranged on the bottom surface of the second transverse plate between the second opening and the second end of the second transverse plate.
8\. The wet clean apparatus for a single wafer according to claim 5, wherein the height of the first vertical plate above the first opening is greater than or equal to a maximum height of a splash formed by the etchant flowing back from the arc structure to the third inclined plate, so as to prevent the flowing-back etchant from splashing onto the edge of the wafer.

9\. The wet clean apparatus for a single wafer according to claim 7, wherein the etchant injection apparatus comprises a nozzle and an arm, the nozzle is arranged on the arm, the nozzle is connected to an etchant conveying pipeline, and the etchant conveying pipeline is connected to an etchant source.

10\. The wet clean apparatus for a single wafer according to claim 9, wherein the etchant comprises an acid, a base, or an organic liquid.

11\. The wet clean apparatus for a single wafer according to claim 10, wherein there are a plurality of baffles; and
each of the baffles realizes recovery of more than one of the etchants.

12\. The wet clean apparatus for a single wafer according to claim 11, wherein the first vertical plate of part of the baffles is provided with more than two first openings, and the first openings are positioned at different heights in the length direction of the first vertical plate;
a corresponding set of the anti-splash structure and the recovery structure is arranged at each of the first openings; and
the first vertical plate can move vertically, when the first opening moves to a position on the movement track of the etchant shaken off from the surface of the wafer, the anti-splash structure and the recovery structure corresponding to the first opening are used for the recovery of the etchant, and the anti-splash structure and the recovery structure corresponding to each of the first openings realize the recovery of one of the etchants. 11 12 13

OFFICE ACTION:
Notice of Pre-AIA  or AIA  Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Claim Rejections - 35 USC § 112
The following is a quotation of 35 U.S.C. 112(b):
(b)  CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention.
The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph:
The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention.
Claims 8, 11-12 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA  35 U.S.C. 112, the applicant), regards as the invention.
Claim 8 recites the following limitation: “the height of the first vertical plate above the first opening is greater than or equal to a maximum height of a splash formed by the etchant flowing back from the arc structure”. It is unclear what height is being claimed since the height of the splash will depend on various process related factors such as the type of fluid being splashed, the velocity of the splash, etc.
Claim 11 recites the limitation the etchants in line 3.  There is insufficient antecedent basis for this limitation in the claim.
Allowable Subject Matter
Claims 8, 11-12 would be allowable if rewritten to overcome the rejection(s) under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), 2nd paragraph, set forth in this Office action and to include all of the limitations of the base claim and any intervening claims.
Claims 1-7, 9-10 are allowed.
The following is an examiner’s statement of reasons for allowance: The closest prior art of record is Ito et al. (US20180221925). Ito et al. teaches a wet clean apparatus for a single wafer (see abstract, paragraph [0002]), comprising: a wafer bearing platform 31 having a rotation function, used for placement of a wafer and rotation of the wafer (see figure 2, paragraph [0036]); an injection apparatus 40 capable of injecting an etchant onto the surface of the wafer (see paragraphs [0045]-[0048], figures 2-3); and a baffle 80, 96 arranged on the periphery of the wafer bearing platform 31 (see figures 2, 10, paragraphs [0055]-[0066]); the baffle 80, 96 comprising an anti-splash structure used for decelerating the etchant shaken off from the wafer (see paragraph [0061]); the anti-splash structure comprising: a first vertical plate 81, wherein the length direction of the first vertical plate is perpendicular to the surface of the wafer (see figure 2, 4a-7), and there is a spacing between the inner side surface of the first vertical plate 81 and the wafer (see figure 2, 4a-7); a first opening 87 transversely passing through the first vertical plate 81, wherein the first opening 87 is arranged so as to be capable of receiving fluid shaken off from the surface of the wafer (reads on arranged on a movement track of the etchant shaken off from the surface of the wafer so that the etchant passes through the first opening 87) (see figures 5, 10, paragraph [0105]); and a second transverse plate (see figure 10 as reproduced in figure A below); the top surface of the second transverse plate is lower than or flush with the bottom surface of the first opening 87 (see figure 10 as reproduced in figure A below), and the etchant passing through the first opening 87 is capable of flowing on the top surface of the second transverse plate so that the etchant undergoes a first time of deceleration (since frictional forces will inherently cause deceleration when fluid travels over the surface of the second transverse plate).
[AltContent: arrow][AltContent: textbox (Second transverse plate)]
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Ito et al. fails to teach/disclose the following limitations of independent claim 1: “a first end of the second transverse plate is fixedly arranged on the outer side surface of the first vertical plate… the top surface of the second transverse plate is horizontal”. Further no other prior art was located that fairly suggested the claimed invention in whole or in part along with the requisite motivation for combination to anticipate or render the claimed invention obvious.
Any comments considered necessary by applicant must be submitted no later than the payment of the issue fee and, to avoid processing delays, should preferably accompany the issue fee.  Such submissions should be clearly labeled “Comments on Statement of Reasons for Allowance.”
Conclusion


NEXT OFFICE ACTION: Notice of Pre-AIA  or AIA  Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Allowable Subject Matter
Claims 1-7, 9-12 are allowed.
The following is an examiner’s statement of reasons for allowance: The closest prior art of record is Ito et al. (US20180221925). Ito et al. fails to teach/disclose the following limitations of independent claim 1: “…a first end of the second transverse plate is fixedly arranged on the outer side surface of the first vertical plate; the top surface of the second transverse plate is horizontal…”. Further no other prior art was located that fairly suggested the claimed invention in whole or in part along with the requisite motivation for combination to anticipate or render the claimed invention obvious.
Any comments considered necessary by applicant must be submitted no later than the payment of the issue fee and, to avoid processing delays, should preferably accompany the issue fee.  Such submissions should be clearly labeled “Comments on Statement of Reasons for Allowance.”

CITED REFERENCE SUMMARIES: Ref US20180221925A1: Claims:
A substrate processing apparatus, comprising: a substrate holding unit configured to hold a substrate; at least one processing liquid nozzle configured to discharge a processing liquid onto the substrate held by the substrate holding unit; a processing vessel configured to accommodate therein the substrate holding unit and the at least one processing liquid nozzle; a stationary cup body disposed around the substrate holding unit and configured to receive at least the processing liquid or mist of the processing liquid discharged onto the substrate, the stationary cup body not being moved relatively with respect to the processing vessel; a mist guard provided at an outside of the stationary cup body to surround the stationary cup body and configured to block a liquid scattered outwards beyond a space above the stationary cup body; and a guard elevating mechanism configured to elevate the mist guard to a first guard height and a second guard height lower than the first guard height, wherein the mist guard comprises a cylindrical portion of a cylindrical shape and a protruding portion protruded above the stationary cup body from an upper portion of the cylindrical portion toward an inside of the cylindrical portion.
a substrate holding unit configured to hold a substrate;
at least one processing liquid nozzle configured to discharge a processing liquid onto the substrate held by the substrate holding unit;
a processing vessel configured to accommodate therein the substrate holding unit and the at least one processing liquid nozzle;
a stationary cup body disposed around the substrate holding unit and configured to receive at least the processing liquid or mist of the processing liquid discharged onto the substrate, the stationary cup body not being moved relatively with respect to the processing vessel;
a mist guard provided at an outside of the stationary cup body to surround the stationary cup body and configured to block a liquid scattered outwards beyond a space above the stationary cup body; and
a guard elevating mechanism configured to elevate the mist guard to a first guard height and a second guard height lower than the first guard height,
wherein the mist guard comprises a cylindrical portion of a cylindrical shape and a protruding portion protruded above the stationary cup body from an upper portion of the cylindrical portion toward an inside of the cylindrical portion.
The substrate processing apparatus of claim 1 , further comprising: a control unit configured to control the guard elevating mechanism to locate the mist guard at the first guard height when supplying the processing liquid from the at least one processing liquid nozzle onto the substrate held by the substrate holding unit, and to locate the mist guard at the second guard height when drying the substrate.
a control unit configured to control the guard elevating mechanism to locate the mist guard at the first guard height when supplying the processing liquid from the at least one processing liquid nozzle onto the substrate held by the substrate holding unit, and to locate the mist guard at the second guard height when drying the substrate.
The substrate processing apparatus of claim 2 , wherein an air flow is formed between the mist guard and the stationary cup body when the mist guard is located at the first guard height, and an air flow is formed above the mist guard when the mist guard is located at the second guard height.
wherein an air flow is formed between the mist guard and the stationary cup body when the mist guard is located at the first guard height, and an air flow is formed above the mist guard when the mist guard is located at the second guard height.
The substrate processing apparatus of claim 1 , further comprising: a bottom plate provided at an outside of the mist guard and configured to partition a bottom of a processing space within the processing vessel; and a gas exhaust opening which is provided at the outside of the mist guard and through which an atmosphere within the processing space is exhausted to an outside of the processing space.
a bottom plate provided at an outside of the mist guard and configured to partition a bottom of a processing space within the processing vessel; and
a gas exhaust opening which is provided at the outside of the mist guard and through which an atmosphere within the processing space is exhausted to an outside of the processing space.
The substrate processing apparatus of claim 4 , wherein the bottom plate is extended to a sidewall of the processing vessel, and a top surface of the bottom plate is inclined such that a height thereof decreases as approaching the sidewall.
wherein the bottom plate is extended to a sidewall of the processing vessel, and a top surface of the bottom plate is inclined such that a height thereof decreases as approaching the sidewall.
The substrate processing apparatus of claim 1 , wherein the at least one processing liquid nozzle includes a first processing liquid nozzle and a second processing liquid nozzle, the substrate processing apparatus further comprises a first nozzle arm configured to move the first processing liquid nozzle while holding the first processing liquid nozzle; a second nozzle arm configured to move the second processing liquid nozzle while holding the second processing liquid nozzle; and a control unit configured to control an operation of the substrate processing apparatus, and the control unit controls the mist guard to be located at a third guard height between the first guard height and the second guard height when performing a nozzle switching operation of driving the second nozzle arm to advance the second processing liquid nozzle from a position outside the substrate held by the substrate holding unit to a position above the substrate and driving the first nozzle arm to retreat the first processing liquid nozzle from the position above the substrate to a position outside the substrate.
wherein the at least one processing liquid nozzle includes a first processing liquid nozzle and a second processing liquid nozzle,
the substrate processing apparatus further comprises a first nozzle arm configured to move the first processing liquid nozzle while holding the first processing liquid nozzle; a second nozzle arm configured to move the second processing liquid nozzle while holding the second processing liquid nozzle; and a control unit configured to control an operation of the substrate processing apparatus, and
the control unit controls the mist guard to be located at a third guard height between the first guard height and the second guard height when performing a nozzle switching operation of driving the second nozzle arm to advance the second processing liquid nozzle from a position outside the substrate held by the substrate holding unit to a position above the substrate and driving the first nozzle arm to retreat the first processing liquid nozzle from the position above the substrate to a position outside the substrate.
The substrate processing apparatus of claim 6 , further comprising: a first arm elevating mechanism configured to elevate the first nozzle arm to between a first arm height and a second arm height lower than the first arm height; and a second arm elevating mechanism configured to elevate the second nozzle arm to between a third arm height and a fourth arm height lower than the third arm height, wherein the control unit controls the first arm elevating mechanism to locate the first nozzle arm at the first arm height and controls the second arm elevating mechanism to locate the second nozzle arm at the third arm height when performing the nozzle switching operation.
a first arm elevating mechanism configured to elevate the first nozzle arm to between a first arm height and a second arm height lower than the first arm height; and
a second arm elevating mechanism configured to elevate the second nozzle arm to between a third arm height and a fourth arm height lower than the third arm height,
wherein the control unit controls the first arm elevating mechanism to locate the first nozzle arm at the first arm height and controls the second arm elevating mechanism to locate the second nozzle arm at the third arm height when performing the nozzle switching operation.
The substrate processing apparatus of claim 6 , further comprising: a rotating mechanism configured to rotate the substrate held by the substrate holding unit, wherein the control unit controls the rotating mechanism to set a rotation number of the substrate at a time when the nozzle switching operation is performed to be smaller than a rotation number of the substrate at a time when the first processing liquid nozzle discharges the processing liquid onto the substrate before performing the nozzle switching operation.
a rotating mechanism configured to rotate the substrate held by the substrate holding unit,
wherein the control unit controls the rotating mechanism to set a rotation number of the substrate at a time when the nozzle switching operation is performed to be smaller than a rotation number of the substrate at a time when the first processing liquid nozzle discharges the processing liquid onto the substrate before performing the nozzle switching operation.
The substrate processing apparatus of claim 1 , further comprising: a stationary nozzle configured to discharge a processing liquid from an outside of the mist guard onto the substrate held by the substrate holding unit, wherein the mist guard is provided with a liquid passage opening through which the processing liquid discharged from the stationary nozzle is allowed to reach the substrate after passing through the mist guard when the mist guard is located at the first guard height.
a stationary nozzle configured to discharge a processing liquid from an outside of the mist guard onto the substrate held by the substrate holding unit,
wherein the mist guard is provided with a liquid passage opening through which the processing liquid discharged from the stationary nozzle is allowed to reach the substrate after passing through the mist guard when the mist guard is located at the first guard height.
The substrate processing apparatus of claim 1 , further comprising: a mist guard accommodating portion configured to accommodate the cylindrical portion of the mist guard therein; and an outlet unit configured to drain a liquid or a gas flown into the mist guard accommodating portion.
a mist guard accommodating portion configured to accommodate the cylindrical portion of the mist guard therein; and
an outlet unit configured to drain a liquid or a gas flown into the mist guard accommodating portion.
The substrate processing apparatus of claim 1 , further comprising: a cleaning mechanism configured to clean a surface of the mist guard facing the stationary cup body.
a cleaning mechanism configured to clean a surface of the mist guard facing the stationary cup body.
The substrate processing apparatus of claim 1 , wherein the stationary cup body has an inclined top surface extended toward a central portion of the substrate held by the substrate holding unit, the inclined top surface is disposed such that a height thereof increases as approaching the central portion of the substrate, the inclined top surface is in contact with a tip end portion of the protruding portion of the mist guard located at the second guard height, to thereby allow a space in contact with a surface of the mist guard facing the stationary cup body to be isolated from a space above the substrate held by the substrate holding unit.
wherein the stationary cup body has an inclined top surface extended toward a central portion of the substrate held by the substrate holding unit,
the inclined top surface is disposed such that a height thereof increases as approaching the central portion of the substrate,
the inclined top surface is in contact with a tip end portion of the protruding portion of the mist guard located at the second guard height, to thereby allow a space in contact with a surface of the mist guard facing the stationary cup body to be isolated from a space above the substrate held by the substrate holding unit.
The substrate processing apparatus of claim 11 , wherein the cleaning mechanism is configured to clean the mist guard by supplying a cleaning liquid when the mist guard is located at the second guard height.
wherein the cleaning mechanism is configured to clean the mist guard by supplying a cleaning liquid when the mist guard is located at the second guard height.
The substrate processing apparatus of claim 13 , wherein the stationary cup body comprises a cylindrical portion of a cylindrical shape and a protruding portion protruded from an upper portion of the cylindrical portion toward an inside of the cylindrical portion, a gap forming portion is provided at a bottom surface of the protruding portion of the mist guard, the gap forming portion forms a first gap between a bottom surface of the gap forming portion and a top surface of the protruding portion of the stationary cup body, a second gap is formed between the top surface of the protruding portion of the stationary cup body and a portion of the mist guard where the gap forming portion is not provided, and the cleaning mechanism comprises a cleaning liquid nozzle configured to supply the cleaning liquid into the second gap.
wherein the stationary cup body comprises a cylindrical portion of a cylindrical shape and a protruding portion protruded from an upper portion of the cylindrical portion toward an inside of the cylindrical portion,
a gap forming portion is provided at a bottom surface of the protruding portion of the mist guard,
the gap forming portion forms a first gap between a bottom surface of the gap forming portion and a top surface of the protruding portion of the stationary cup body,
a second gap is formed between the top surface of the protruding portion of the stationary cup body and a portion of the mist guard where the gap forming portion is not provided, and
the cleaning mechanism comprises a cleaning liquid nozzle configured to supply the cleaning liquid into the second gap.
The substrate processing apparatus of claim 14 , wherein the gap forming portion is extended along an entire circumference of the protruding portion of the mist guard, a diametrical groove extended in a radial direction and a circumferential groove intersected with the diametrical groove and extended in a circumferential direction are formed at the bottom surface of the gap forming portion, and the cleaning liquid nozzle is provided at a position of the stationary cup body facing the diametrical groove, and the circumferential groove is provided at an inside of the cleaning liquid nozzle in the radial direction.
wherein the gap forming portion is extended along an entire circumference of the protruding portion of the mist guard,
a diametrical groove extended in a radial direction and a circumferential groove intersected with the diametrical groove and extended in a circumferential direction are formed at the bottom surface of the gap forming portion, and
the cleaning liquid nozzle is provided at a position of the stationary cup body facing the diametrical groove, and the circumferential groove is provided at an inside of the cleaning liquid nozzle in the radial direction.
The substrate processing apparatus of claim 1 , wherein the stationary cup body comprises, at an outside of the stationary cup body in a diametrical direction, a cup-shaped constituent component which is not moved with respect to the stationary cup body, and a space between the stationary cup body and the cup-shaped constituent component is exhausted.
wherein the stationary cup body comprises, at an outside of the stationary cup body in a diametrical direction, a cup-shaped constituent component which is not moved with respect to the stationary cup body, and
a space between the stationary cup body and the cup-shaped constituent component is exhausted.
The substrate processing apparatus of claim 4 , wherein, when the mist guard is located at the first guard height, a lower end of the cylindrical portion of the mist guard is located at a position higher than a top surface of the bottom plate.
wherein, when the mist guard is located at the first guard height, a lower end of the cylindrical portion of the mist guard is located at a position higher than a top surface of the bottom plate.
A substrate processing method performed by using a substrate processing apparatus, wherein the substrate processing apparatus comprises: a substrate holding unit configured to hold a substrate; at least one processing liquid nozzle configured to discharge a processing liquid onto a top surface of the substrate held by the substrate holding unit; a processing vessel configured to accommodate therein the substrate holding unit and the at least one processing liquid nozzle; a stationary cup body disposed around the substrate holding unit and configured to receive the processing liquid or mist of the processing liquid discharged onto the substrate, the stationary cup body not being moved relatively with respect to the processing vessel; a mist guard provided at an outside of the stationary cup body to surround the stationary cup body and configured to block a liquid scattered outwards beyond a space above the stationary cup body; and a guard elevating mechanism configured to elevate the mist guard, wherein the mist guard comprises a cylindrical portion of a cylindrical shape and a protruding portion protruded from an upper end of the cylindrical portion toward the stationary cup body, wherein the substrate processing method comprises: supplying the processing liquid onto the substrate held by the substrate holding unit from the at least one processing liquid nozzle in a state that the mist guard is located at a first guard height; and drying the substrate in a state that the mist guard is located at a second guard height lower than the first guard height.
wherein the substrate processing apparatus comprises:
at least one processing liquid nozzle configured to discharge a processing liquid onto a top surface of the substrate held by the substrate holding unit;
a stationary cup body disposed around the substrate holding unit and configured to receive the processing liquid or mist of the processing liquid discharged onto the substrate, the stationary cup body not being moved relatively with respect to the processing vessel;
a guard elevating mechanism configured to elevate the mist guard,
wherein the mist guard comprises a cylindrical portion of a cylindrical shape and a protruding portion protruded from an upper end of the cylindrical portion toward the stationary cup body,
wherein the substrate processing method comprises:
supplying the processing liquid onto the substrate held by the substrate holding unit from the at least one processing liquid nozzle in a state that the mist guard is located at a first guard height; and
drying the substrate in a state that the mist guard is located at a second guard height lower than the first guard height.
The substrate processing method of claim 18 , wherein the at least one processing liquid nozzle includes a first processing liquid nozzle and a second processing liquid nozzle, the substrate processing apparatus further comprises a first nozzle arm configured to move the first processing liquid nozzle while holding the first processing liquid nozzle and a second nozzle arm configured to move the second processing liquid nozzle while holding the second processing liquid nozzle, wherein the substrate processing method comprises, as the supplying of the processing liquid onto the substrate, supplying a processing liquid onto the substrate from the first processing liquid nozzle located above the substrate in a state that the second processing liquid nozzle is retreated from above t
[Truncated to input limit]