# Paul Rappaport Award

The Paul Rappaport Award was established in 1984 to commemorate the achievement of the late American physicist Paul Rappaport. The best paper appearing in a fast turn around archival publication of the IEEE Electron Devices Society is given the award annually. The recipients are awarded a certificate and $2,500, presented at the IEEE EDS International Electron Devices Meeting.

## Recipients

The past recipients are:
| Year | Recipient(s) | Paper |
| 1982 | R. Fabian Pease David B. Tuckerman | High-Performance Heat Sinking for VLS |
| 1983 | Jaroslav Hynecek | Electron-Hole Recombination Antiblooming for Virtual-Phase CCD Imager |
| 1984 | Shojiro Asai Norikazu Hashimoto Kiyoo Itoh Tokuo Kure Hideo Sunami Toru Toyabe | A Corrugated Capacitor Cell (CCC) |
| 1985 | Roger Epworth Linus A. Fetter Richard E. Howard Lawrence D. Jackel Paul M. Mankiewich Kristan S. Ralls William J. Skocpol Donald M. Tennant | Single electron switching events in nanometer-scale Si MOSFET's |
| 1986 | Ben T. Ebihara Peter Ramins | Improvements in MDC and TWT overall efficiency through the application of carbon electrode surfaces |
| 1987 | Richard B. True | Emittance and the design of beam formation, transport, and collection systems in periodically focused TWT's |
| 1988 | Diane R. Ahrendt Yeou-Chong Vladimir F. Drobny Valdis E. Garuts Robert D. Herman Eric E. Lane June S. Lee Evan E. Patton Tadanori Yamaguchi Simon Yu Todd H. Yuzuriha | Process and device performance of a high-speed double poly-Si bipolar technology using borosenic-poly process with coupling-base implant |
| 1989 | James F. Gibbons Judy L. Hoyt Clifford A. King | Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors |
| 1990 | Khalil Najafi Kenichiro Suzuki Kensall D. Wise | A 1024-element high-performance silicon tactile imager |
| 1991 | Hiroshi Fukuda Akira Imai Shinji Okazaki Tsuneo Terasawa | New approach to resolution limit and advanced image formation techniques in optical lithography |
| 1992 | April S. Brown Linda M. Jelloian Loi D. Nguyen Mark A. Thompson | 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors |
| 1993 | Hisashi Hara Hiroshi Iwai Toyota Morimoto Masakatsu Tsuchiaki | A new charge pumping method for determining the spatial distribution of hot-carrier-induced fixed charge in p-MOSFETs |
| 1994 | Takashi Hashimoto Tomoyuki Ishii Takashi Kobayashi Fumio Murai Koichi Seki Kazuo Yano | Room-temperature single-electron memory |
| 1995 | Herbert Lifka Ger M. Paulzen Henk G. Pomp Pierre H. Woerlee Reinout Woltjer | Three Hot-Carrier Degradation Mechanisms in Deep-Submicron PMOSFETS |
| 1996 | Chris J. Diorio Paul E. Hasler Carver A. Mead Bradley A. Minch | A Single-Transistor Silicon Synapse |
| 1997 | Dimitri A. Antoniadis Anantha P. Chandrakasan Carlin J. Vieri Isabel Y. Yang | Back-Gated CMOS on SOIAS For Dynamic Threshold Voltage Control |
| 1998 | Yujun Li Tso-Ping Mai | A Front-Gate Charge-Pumping Method for Probing Both Interfaces in SOI Devices |
| 1999 | Pallab Bhattacharya Kishore K. Kamath Jasprit Singh David Klotzkin Jamie Phillips Hong-Tao Jiang Nalini Chervela Theodore B. Norris Tom Sosnowski Joy Laskar M. Ramana Murty | In (Ga)As/GaAs Self-Organized Quantum Dot Lasers: DC and Small-Signal Modulation Properties |
| 2000 | Didier Dutartre Malgorzata Jurczak Damien Lenoble Jose Martins Stephanie Monfray Roland Pantel M. Paoli Jorge Luis Regolini Pascal Ribot Thomas Skotnicki Beatrice Tormen | Silicon-on-Nothing (SON)--an Innovative Process for Advanced CMOS |
| 2001 | Ioannis Kymissis Christos D. Dimitrakopoulos Sampath Purusothaman | High Performance Bottom Electrode Organic Thin-Film Transistors |
| 2001 | Raymond M. Warner, Jr. | Microelectronics: Its Unusual Origin and Personality |
| 2002 | Yee Chia Yeo Vivek Subramanian Jakub Kedzierski Peiqi Xuan Tsu-Jae King Jeffrey Bokor Chenming Hu | Design & Fabrication of 50-nm Thin-Body p-MOSFETS with a Silicon-Germanium Heterostructure Channel |
| 2003 | Ken Uchida Junji Koga Ryuji Ohba Akira Toriumi | Programmable Single-Electron Transistor Logic for future Low-Power Intelligent LSI : Proposal and Room-Temperature Operation |
| 2004 | Franco Stellari Peilin Song James C. Tsang Moyra K. McManus Mark B. Ketchen | Testing and Diagnostics of CMOS Circuits Using Light Emission from Off-State Leakage Current |
| 2005 | Kailash Gopalakrishnan Peter B. Griffin James D. Plummer Raymond Wood Christoph Jungemann | Impact Ionization MOS (I-MOS) - Part I: Device and Circuit Simulations and Part II: Experimental Results |
| 2006 | Billy Lau Alfred Forchel Lukas Worschech David Hartmann | Cascaded Quantum Wires and Integrated Design for Complex Logic Functions: Nanoelectronic Full Adder |
| 2007 | Azad Naeemi James D. Meindl | Design and Performance Modeling for Single-Walled Carbon Nanotubes as Local, Semiglobal, and Global Interconnects in Gigascale Integrated Systems |
| 2008 | Kah-Wee Ang Jian Qiang Lin Ganesh S. Samudra Shih-Hang Tung Narayanan Balasumbramanian Yee-Chia Yeo | Strained n-MOSFET With Embedded Source/Drain Stressors and Strain-Transfer Structure (STS) for Enhanced Transistor Performance |
| 2009 | Takao Someya Tsuyoshi Sekitani Koichiro Zaitsu Yoshiaki Noguchi Kiyoshiro Ishibe Makoto Takamiya Takayasu Sakurai | Printed Nonvolatile Memory for a Sheet-Type Communication System |
| 2010 | Yusaku Kato Tsuyoshi Sekitani Yoshiaki Noguchi Tomoyuki Yokota Makoto Takamiya Takayasu Sakurai Takao Someya | Large-Area Flexible Ultrasonic Imaging System With an Organic-Transistor Active Matrix |
| 2011 | Tibor Grasser Ben Kaczer Wolfgang Goes Hans Reisinger Thomas Aichinger Philipp Hehenberger Paul-JÃ¼rgen Wagner Franz Schanovsky Jacopo Franco MarÃ­a Toledano Luque Michael Nelhiebel | The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps |
| 2012 | Kelin Kuhn | Considerations for Ultimate CMOS Scaling |
| 2013 | Rui Zhang Po-Chin Huang Ju-Chin Lin Noriyuki Taoka Mitsuru Takenaka Shinichi Takagias | High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Postoxidation |
| 2014 | Sylvain Barraud Jean-Michel Hartmann Virginie Maffini-Alvaro Lucie Tosti Vincent Delaye Dominique Lafond | Top-Down Fabrication of Epitaxial SiGe/Si Multi-(Core/Shell) p-FET Nanowire Transistors |
| 2015 | Stefano Ambrogio Simone Balatti Vincent McCaffrey Daniel C. Wang Daniele Ielmini | Noise-Induced Resistance Broadening in Resistive Switching Memory Part I: Intrinsic Cell Behavior / Part II: Array Statistics |
| 2016 | Takatoshi Tsujimura Takeshi Hakii Suguru Noda | A Color-Tunable Polychromatic Organic-Light-Emitting-Diode Device With Low Resistive Intermediate Electrode for Rollto-Roll Manufacturing |
| 2017 | L. Witters, H. Arimura, F. Sebaai, A. Hikavyy, A. P. Milenin, R. Loo, A. De Keersgieter, G. Eneman, T. Schram, K. Wostyn, K. Devriendt, A. Schulze, R. Lieten, S. Bilodeau, E. Cooper, P. Storck, E. Chiu, C. Vrancken, P. Favia, E. Vancoille, J. Mitard, R. Langer, A. Opdebeeck, F. Holsteyns, N. Waldron, K. Barla, V. De Heyn, D. Mocuta, and N. Collaert | Strained Germanium Gate-All-Around pMOS Device Demonstration Using Selective Wire Release Etch Prior to Replacement Metal Gate Deposition |
| 2018 | Konstantin Osipov, Joachim Wuerfl, Ina Ostermay, Frank Brunner, Günther Tränkle and Maniteja Bodduluri | Local 2DEG Density Control in Heterostructures of Piezoelectric Materials and Its Application in GaN HEMT Fabrication Technology |
| 2019 | Kihyun Choi, Hyun Chul Sagong, Wonchang Kang, Hyunjin Kim, Jiang Hai, Miji Lee, Bomi Kim, Mi-ji Lee, Soonyoung Lee, Hyewon Shim, Junekyun Park, YoungWoo Cho, Hwa Sung Rhee and Sangwoo Pae | Enhanced Reliability of 7nm Process Technology Featuring EUV |
| 2020 | Kangguo Cheng, Chanro Park, Heng Wu, Juntao Li, Son Nguyen, Jingyun Zhang, Miaomiao Wang, Sanjay Mehta, Zuoguang Liu, Richard Conti, Nicholas J. Loubet, Julien Frougier, Andrew Greene, Tenko Yamashita, Balasubramanian Haran and Rama Divakaruni | Improved Air Spacer for Highly Scaled CMOS Technology |
| 2021 | Jixuan Wu, Fei Mo, Takuya Saraya, Toshiro Hiramoto, Mototaka Ochi, Hiroshi Goto and Masaharu Kobayashi | Monolithic Integration of Oxide Semiconductor FET and Ferroelectric Capacitor Enabled by Sn-Doped InGaZnO for 3-D Embedded RAM Application |
| 2022 | Akshay M. Arabhavi, Filippo Ciabattini, Sara Hamzeloui, Ralf Flückiger, Tamara Saranovac, Daxin Han, Diego Marti, Giorgio Bonomo, Rimjhim Chaudhary, Olivier Ostinelli, and Colombo R. Bolognesi | InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With fMAX = 1.2 THz |
| 2023 | Weiyi Li, Brian Romanczyk, Matthew Guidry, Emre Akso, Nirupam Hatui, Christian Wurm, Wenjian Liu, Pawana Shrestha, Henry Collins, Christopher Clymore, Stacia Keller, and Umesh K. Mishra | Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs |