# List of semiconductor scale examples

Listed are many semiconductor scale examples for various metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) semiconductor manufacturing process nodes.

## Timeline of MOSFET demonstrations
### PMOS and NMOS

MOSFET (PMOS and NMOS) demonstrations :
| Date | Channel length | Oxide thickness | MOSFET logic | Researcher(s) | Organization |
| June 1960 | 20,000 nm | 100 nm | PMOS | Mohamed M. Atalla, Dawon Kahng | Bell Telephone Laboratories |
| June 1960 | 20,000 nm | 100 nm | NMOS | Mohamed M. Atalla, Dawon Kahng | Bell Telephone Laboratories |
| June 1960 | 10,000 nm | 100 nm | PMOS | Mohamed M. Atalla, Dawon Kahng | Bell Telephone Laboratories |
| June 1960 | 10,000 nm | 100 nm | NMOS | Mohamed M. Atalla, Dawon Kahng | Bell Telephone Laboratories |
| May 1965 | 8,000 nm | 150 nm | NMOS | Chih-Tang Sah, Otto Leistiko, A.S. Grove | Fairchild Semiconductor |
| May 1965 | 5,000 nm | 170 nm | PMOS | Chih-Tang Sah, Otto Leistiko, A.S. Grove | Fairchild Semiconductor |
| December 1972 | 1,000 nm | ? | PMOS | Robert H. Dennard, Fritz H. Gaensslen, Hwa-Nien Yu | IBM T.J. Watson Research Center |
| 1973 | 7,500 nm | ? | NMOS | Sohichi Suzuki | NEC |
| 1973 | 6,000 nm | ? | PMOS | ? | Toshiba |
| October 1974 | 1,000 nm | 35 nm | NMOS | Robert H. Dennard, Fritz H. Gaensslen, Hwa-Nien Yu | IBM T.J. Watson Research Center |
| October 1974 | 500 nm | 35 nm | NMOS | Robert H. Dennard, Fritz H. Gaensslen, Hwa-Nien Yu | IBM T.J. Watson Research Center |
| September 1975 | 1,500 nm | 20 nm | NMOS | Ryoichi Hori, Hiroo Masuda, Osamu Minato | Hitachi |
| March 1976 | 3,000 nm | ? | NMOS | ? | Intel |
| April 1979 | 1,000 nm | 25 nm | NMOS | William R. Hunter, L. M. Ephrath, Alice Cramer | IBM T.J. Watson Research Center |
| December 1984 | 100 nm | 5 nm | NMOS | Toshio Kobayashi, Seiji Horiguchi, K. Kiuchi | Nippon Telegraph and Telephone |
| December 1985 | 150 nm | 2.5 nm | NMOS | Toshio Kobayashi, Seiji Horiguchi, M. Miyake, M. Oda | Nippon Telegraph and Telephone |
| December 1985 | 75 nm | ? | NMOS | Stephen Y. Chou, Henry I. Smith, Dimitri A. Antoniadis | MIT |
| January 1986 | 60 nm | ? | NMOS | Stephen Y. Chou, Henry I. Smith, Dimitri A. Antoniadis | MIT |
| June 1987 | 200 nm | 3.5 nm | PMOS | Toshio Kobayashi, M. Miyake, K. Deguchi | Nippon Telegraph and Telephone |
| December 1993 | 40 nm | ? | NMOS | Mizuki Ono, Masanobu Saito, Takashi Yoshitomi | Toshiba |
| September 1996 | 16 nm | ? | PMOS | Hisao Kawaura, Toshitsugu Sakamoto, Toshio Baba | NEC |
| June 1998 | 50 nm | 1.3 nm | NMOS | Khaled Z. Ahmed, Effiong E. Ibok, Miryeong Song | Advanced Micro Devices (AMD) |
| December 2002 | 6 nm | ? | PMOS | Bruce Doris, Omer Dokumaci, Meikei Ieong | IBM |
| December 2003 | 3 nm | ? | PMOS | Hitoshi Wakabayashi, Shigeharu Yamagami | NEC |
| December 2003 | 3 nm | ? | NMOS | Hitoshi Wakabayashi, Shigeharu Yamagami | NEC |

### CMOS (single-gate)

Complementary MOSFET (CMOS) demonstrations (single-gate) :
| Date | Channel length | Oxide thickness | Researcher(s) | Organization |
| February 1963 | ? | ? | Chih-Tang Sah, Frank Wanlass | Fairchild Semiconductor |
| 1968 | 20,000 nm | 100 nm | ? | RCA Laboratories |
| 1970 | 10,000 nm | 100 nm | ? | RCA Laboratories |
| December 1976 | 2,000 nm | ? | A. Aitken, R.G. Poulsen, A.T.P. MacArthur, J.J. White | Mitel Semiconductor |
| February 1978 | 3,000 nm | ? | Toshiaki Masuhara, Osamu Minato, Toshio Sasaki, Yoshio Sakai | Hitachi Central Research Laboratory |
| February 1983 | 1,200 nm | 25 nm | R.J.C. Chwang, M. Choi, D. Creek, S. Stern, P.H. Pelley | Intel |
| February 1983 | 900 nm | 15 nm | Tsuneo Mano, J. Yamada, Junichi Inoue, S. Nakajima | Nippon Telegraph and Telephone (NTT) |
| December 1983 | 1,000 nm | 22.5 nm | G.J. Hu, Yuan Taur, Robert H. Dennard, Chung-Yu Ting | IBM T.J. Watson Research Center |
| February 1987 | 800 nm | 17 nm | T. Sumi, Tsuneo Taniguchi, Mikio Kishimoto, Hiroshige Hirano | Matsushita |
| February 1987 | 700 nm | 12 nm | Tsuneo Mano, J. Yamada, Junichi Inoue, S. Nakajima | Nippon Telegraph and Telephone (NTT) |
| September 1987 | 500 nm | 12.5 nm | Hussein I. Hanafi, Robert H. Dennard, Yuan Taur, Nadim F. Haddad | IBM T.J. Watson Research Center |
| December 1987 | 250 nm | ? | Naoki Kasai, Nobuhiro Endo, Hiroshi Kitajima | NEC |
| February 1988 | 400 nm | 10 nm | M. Inoue, H. Kotani, T. Yamada, Hiroyuki Yamauchi | Matsushita |
| December 1990 | 100 nm | ? | Ghavam G. Shahidi, Bijan Davari, Yuan Taur, James D. Warnock | IBM T.J. Watson Research Center |
| 1993 | 350 nm | ? | ? | Sony |
| 1996 | 150 nm | ? | ? | Mitsubishi Electric |
| 1998 | 180 nm | ? | ? | TSMC |
| December 2003 | 5 nm | ? | Hitoshi Wakabayashi, Shigeharu Yamagami, Nobuyuki Ikezawa | NEC |

### Multi-gate MOSFET (MuGFET)

Multi-gate MOSFET (MuGFET) demonstrations :
| Date | Channel length | MuGFET type | Researcher(s) | Organization |
| August 1984 | ? | DGMOS | Toshihiro Sekigawa, Yutaka Hayashi | Electrotechnical Laboratory (ETL) |
| 1987 | 2,000 nm | DGMOS | Toshihiro Sekigawa | Electrotechnical Laboratory (ETL) |
| December 1988 | 250 nm | DGMOS | Bijan Davari, Wen-Hsing Chang, Matthew R. Wordeman, C.S. Oh | IBM T.J. Watson Research Center |
| December 1988 | 180 nm | DGMOS | Bijan Davari, Wen-Hsing Chang, Matthew R. Wordeman, C.S. Oh | IBM T.J. Watson Research Center |
| December 1988 | ? | GAAFET | Fujio Masuoka, Hiroshi Takato, Kazumasa Sunouchi, N. Okabe | Toshiba |
| December 1989 | 200 nm | FinFET | Digh Hisamoto, Toru Kaga, Yoshifumi Kawamoto, Eiji Takeda | Hitachi Central Research Laboratory |
| December 1998 | 17 nm | FinFET | Digh Hisamoto, Chenming Hu, Tsu-Jae King Liu, Jeffrey Bokor | University of California (Berkeley) |
| 2001 | 15 nm | FinFET | Chenming Hu, Yang-Kyu Choi, Nick Lindert, Tsu-Jae King Liu | University of California (Berkeley) |
| December 2002 | 10 nm | FinFET | Shibly Ahmed, Scott Bell, Cyrus Tabery, Jeffrey Bokor | University of California (Berkeley) |
| June 2006 | 3 nm | GAAFET | Hyunjin Lee, Yang-kyu Choi, Lee-Eun Yu, Seong-Wan Ryu | KAIST |

### Other types of MOSFET

MOSFET demonstrations (other types) :
| Date | Channel length (nm) | Oxide thickness (nm) | MOSFET type | Researcher(s) | Organization |
| October 1962 | ? | ? | TFT | Paul K. Weimer | RCA Laboratories |
| 1965 | ? | ? | GaAs | H. Becke, R. Hall, J. White | RCA Laboratories |
| October 1966 | 100,000 | 100 | TFT | T.P. Brody, H.E. Kunig | Westinghouse Electric |
| August 1967 | ? | ? | FGMOS | Dawon Kahng, Simon Min Sze | Bell Telephone Laboratories |
| October 1967 | ? | ? | MNOS | H.A. Richard Wegener, A.J. Lincoln, H.C. Pao | Sperry Corporation |
| July 1968 | ? | ? | BiMOS | Hung-Chang Lin, Ramachandra R. Iyer | Westinghouse Electric |
| October 1968 | ? | ? | BiCMOS | Hung-Chang Lin, Ramachandra R. Iyer, C.T. Ho | Westinghouse Electric |
| 1969 | ? | ? | VMOS | ? | Hitachi |
| September 1969 | ? | ? | DMOS | Y. Tarui, Y. Hayashi, Toshihiro Sekigawa | Electrotechnical Laboratory (ETL) |
| October 1970 | ? | ? | ISFET | Piet Bergveld | University of Twente |
| October 1970 | 1000 | ? | DMOS | Y. Tarui, Y. Hayashi, Toshihiro Sekigawa | Electrotechnical Laboratory (ETL) |
| 1977 | ? | ? | VDMOS | John Louis Moll | HP Labs |
| 1977 | ? | ? | LDMOS | ? | Hitachi |
| July 1979 | ? | ? | IGBT | Bantval Jayant Baliga, Margaret Lazeri | General Electric |
| December 1984 | 2000 | ? | BiCMOS | H. Higuchi, Goro Kitsukawa, Takahide Ikeda, Y. Nishio | Hitachi |
| May 1985 | 300 | ? | ? | K. Deguchi, Kazuhiko Komatsu, M. Miyake, H. Namatsu | Nippon Telegraph and Telephone |
| February 1985 | 1000 | ? | BiCMOS | H. Momose, Hideki Shibata, S. Saitoh, Jun-ichi Miyamoto | Toshiba |
| November 1986 | 90 | 8.3 | ? | Han-Sheng Lee, L.C. Puzio | General Motors |
| December 1986 | 60 | ? | ? | Ghavam G. Shahidi, Dimitri A. Antoniadis, Henry I. Smith | MIT |
| May 1987 | ? | 10 | ? | Bijan Davari, Chung-Yu Ting, Kie Y. Ahn, S. Basavaiah | IBM T.J. Watson Research Center |
| December 1987 | 800 | ? | BiCMOS | Robert H. Havemann, R. E. Eklund, Hiep V. Tran | Texas Instruments |
| June 1997 | 30 | ? | EJ-MOSFET | Hisao Kawaura, Toshitsugu Sakamoto, Toshio Baba | NEC |
| 1998 | 32 | ? | ? | ? | NEC |
| 1999 | 8 | ? | ? | ? | NEC |
| April 2000 | 8 | ? | EJ-MOSFET | Hisao Kawaura, Toshitsugu Sakamoto, Toshio Baba | NEC |

## Commercial products using micro-scale MOSFETs
### Products featuring 20 μm manufacturing process

* RCA's CD4000 series of integrated circuits (ICs) beginning in 1968.

### Products featuring 10 μm manufacturing process

* Intel 4004, the first single-chip microprocessor CPU, launched in 1971.
* Intel 8008 CPU launched in 1972.

### Products featuring 8 μm manufacturing process

* Intel 1103, an early dynamic random-access memory (DRAM) chip launched in 1970.
* MOS Technology 6502 1 MHz CPU launched in 1975.

### Products featuring 6 μm manufacturing process

* Toshiba TLCS-12, a microprocessor developed for the Ford EEC (Electronic Engine Control) system in 1973.
* Intel 8080 CPU launched in 1974 was manufactured using this process.
* The Television Interface Adaptor, the custom graphics and audio chip developed for the Atari 2600 in 1977.
* MOS Technology SID, a programmable sound generator developed for the Commodore 64 in 1982.
* MOS Technology VIC-II, a video display controller developed for the Commodore 64 in 1982 (5 μm).

### Products featuring 3 μm manufacturing process

* Intel 8085 CPU launched in 1976.
* Intel 8086 CPU launched in 1978.
* Intel 8088 CPU launched in 1979.
* Motorola 68000 8 MHz CPU launched in 1979 (3.5 μm).

### Products featuring 1.5 μm manufacturing process

* NEC's 64 kb SRAM memory chip in 1981.
* Intel 80286 CPU launched in 1982.
* The Amiga Advanced Graphics Architecture (initially sold in 1992) included chips such as Alice that were manufactured using a 1.5 μm CMOS process.

### Products featuring 1 μm manufacturing process

* NTT's DRAM memory chips, including its 64 kb chip in 1979 and 256 kb chip in 1980.
* NEC's 1 Mb DRAM memory chip in 1984.
* Intel 80386 CPU launched in 1985.

### Products featuring 800 nm manufacturing process

* NTT's 1 Mb DRAM memory chip in 1984.
* NEC and Toshiba used this process for their 4 Mb DRAM memory chips in 1986.
* Hitachi, IBM, Matsushita and Mitsubishi Electric used this process for their 4 Mb DRAM memory chips in 1987.
* Toshiba's 4 Mb EPROM memory chip in 1987.
* Hitachi, Mitsubishi and Toshiba used this process for their 1 Mb SRAM memory chips in 1987.
* Intel 486 CPU launched in 1989.
* microSPARC I launched in 1992.
* First Intel P5 Pentium CPUs at 60 MHz and 66 MHz launched in 1993.

### Products featuring 600 nm manufacturing process

* Mitsubishi Electric, Toshiba and NEC introduced 16 Mb DRAM memory chips manufactured with a 600 nm process in 1989.
* NEC's 16 Mb EPROM memory chip in 1990.
* Mitsubishi's 16 Mb flash memory chip in 1991.
* Intel 80486DX4 CPU launched in 1994.
* IBM/Motorola PowerPC 601, the first PowerPC chip, was produced in 0.6 μm.
* Intel Pentium CPUs at 75 MHz, 90 MHz and 100 MHz.

### Products featuring 350 nm manufacturing process

* Sony's 16 Mb SRAM memory chip in 1994.
* NEC VR4300 (1995), used in the Nintendo 64 game console.
* Intel Pentium Pro (1995), Pentium (P54CS, 1995), and initial Pentium II CPUs (Klamath, 1997).
* AMD K5 (1996) and original AMD K6 (Model 6, 1997) CPUs.
* Parallax Propeller, 8 core microcontroller.

### Products featuring 250 nm manufacturing process

* Hitachi's 16 Mb SRAM memory chip in 1993.
* Hitachi and NEC introduced 256 Mb DRAM memory chips manufactured with this process in 1993, followed by Matsushita, Mitsubishi Electric and Oki in 1994.
* NEC's 1 Gb DRAM memory chip in 1995.
* Hitachi's 128 Mb NAND flash memory chip in 1996.
* DEC Alpha 21264A, which was made commercially available in 1999.
* AMD K6-2 Chomper and Chomper Extended. Chomper was released on May 28, 1998.
* AMD K6-III "Sharptooth" used 250 nm.
* Mobile Pentium MMX Tillamook, released in August 1997.
* Pentium II Deschutes.
* Dreamcast console's Hitachi SH-4 CPU and PowerVR2 GPU, released in 1998.
* Pentium III Katmai.
* Initial PlayStation 2's Emotion Engine CPU.

### Processors using 180 nm manufacturing technology

* Intel Coppermine E- October 1999
* Sony PlayStation 2 console's Emotion Engine and Graphics Synthesizer – March 2000
* ATI Radeon R100 and RV100 Radeon 7000 – 2000
* AMD Athlon Thunderbird – June 2000
* Intel Celeron (Willamette) – May 2002
* Motorola PowerPC 7445 and 7455 (Apollo 6) – January 2002

### Processors using 130 nm manufacturing technology

* Fujitsu SPARC64 V – 2001
* Gekko by IBM and Nintendo (GameCube console) – 2001
* Motorola PowerPC 7447 and 7457 – 2002
* IBM PowerPC G5 970 – October 2002 – June 2003
* Intel Pentium III Tualatin and Coppermine – 2001-04
* Intel Celeron Tualatin-256 – 2001-10-02
* Intel Pentium M Banias – 2003-03-12
* Intel Pentium 4 Northwood- 2002-01-07
* Intel Celeron Northwood-128 – 2002-09-18
* Intel Xeon Prestonia and Gallatin – 2002-02-25
* VIA C3 – 2001
* AMD Athlon XP Thoroughbred, Thorton, and Barton
* AMD Athlon MP Thoroughbred – 2002-08-27
* AMD Athlon XP-M Thoroughbred, Barton, and Dublin
* AMD Duron Applebred – 2003-08-21
* AMD K7 Sempron Thoroughbred-B, Thorton, and Barton – 2004-07-28
* AMD K8 Sempron Paris – 2004-07-28
* AMD Athlon 64 Clawhammer and Newcastle – 2003-09-23
* AMD Opteron Sledgehammer – 2003-06-30
* Elbrus 2000 1891ВМ4Я (1891VM4YA) – 2008-04-27
* MCST-R500S 1891BM3 – 2008-07-27
* Vortex 86SX –

## Commercial products using nano-scale MOSFETs
### Chips using 90 nm manufacturing technology

* Sony–Toshiba Emotion Engine+Graphics Synthesizer (PlayStation 2) – 2003
* IBM PowerPC G5 970FX – 2004
* Elpida Memory's 90 nm DDR2 SDRAM process – 2005
* IBM PowerPC G5 970MP – 2005
* IBM PowerPC G5 970GX – 2005
* IBM Waternoose Xbox 360 Processor – 2005
* IBM–Sony–Toshiba Cell processor – 2005
* Intel Pentium 4 Prescott – 2004-02
* Intel Celeron D Prescott-256 – 2004-05
* Intel Pentium M Dothan – 2004-05
* Intel Celeron M Dothan-1024 – 2004-08
* Intel Xeon Nocona, Irwindale, Cranford, Potomac, Paxville – 2004-06
* Intel Pentium D Smithfield – 2005-05
* AMD Athlon 64 Winchester, Venice, San Diego, Orleans – 2004-10
* AMD Athlon 64 X2 Manchester, Toledo, Windsor – 2005-05
* AMD Sempron Palermo and Manila – 2004-08
* AMD Turion 64 Lancaster and Richmond – 2005-03
* AMD Turion 64 X2 Taylor and Trinidad – 2006-05
* AMD Opteron Venus, Troy, and Athens – 2005-08
* AMD Dual-core Opteron Denmark, Italy, Egypt, Santa Ana, and Santa Rosa
* VIA C7 – 2005-05
* Loongson (Godson) 2Е STLS2E02 – 2007-04
* Loongson (Godson) 2F STLS2F02 – 2008-07
* MCST-4R – 2010-12
* Elbrus-2C+ – 2011-11

### Processors using 65 nm manufacturing technology

* Sony–Toshiba EE+GS (PStwo) – 2005
* Intel Pentium 4 (Cedar Mill) – 2006-01-16
* Intel Pentium D 900-series – 2006-01-16
* Intel Celeron D (Cedar Mill cores) – 2006-05-28
* Intel Core – 2006-01-05
* Intel Core 2 – 2006-07-27
* Intel Xeon (Sossaman) – 2006-03-14
* AMD Athlon 64 series (starting from Lima) – 2007-02-20
* AMD Turion 64 X2 series (starting from Tyler) – 2007-05-07
* AMD Phenom series
* IBM's Cell Processor – PlayStation 3 – 2007-11-17
* IBM's z10
* Microsoft Xbox 360 "Falcon" CPU – 2007–09
* Microsoft Xbox 360 "Opus" CPU – 2008
* Microsoft Xbox 360 "Jasper" CPU – 2008–10
* Microsoft Xbox 360 "Jasper" GPU – 2008–10
* Sun UltraSPARC T2 – 2007–10
* AMD Turion Ultra – 2008-06
* TI OMAP 3 Family – 2008-02
* VIA Nano – 2008-05
* Loongson – 2009
* NVIDIA GeForce 8800GT GPU – 2007

### Processors using 45 nm technology

* Matsushita released the 45 nm Uniphier in 2007.
* Wolfdale, Yorkfield, Yorkfield XE and Penryn are Intel cores sold under the Core 2 brand.
* Intel Core i7 series processors, i5 750 (Lynnfield and Clarksfield)
* Pentium Dual-Core Wolfdale-3M are current Intel mainstream dual core sold under the Pentium brand.
* Diamondville, Pineview are current Intel cores with hyper-threading sold under the Intel Atom brand.
* AMD Deneb (Phenom II) and Shanghai (Opteron) Quad-Core Processors, Regor (Athlon II) dual core processors , Caspian (Turion II) mobile dual core processors.
* AMD (Phenom II) "Thuban" Six-Core Processor (1055T)
* Xenon in the Xbox 360 S model.
* Sony–Toshiba Cell Broadband Engine in PlayStation 3 Slim model – September 2009.
* Samsung S5PC110, as known as Hummingbird.
* Texas Instruments OMAP 36xx.
* IBM POWER7 and z196
* Fujitsu SPARC64 VIIIfx series
* Espresso (microprocessor) Wii U CPU

### Chips using 32 nm technology

* Toshiba produced commercial 32 Gb NAND flash memory chips with the 32 nm process in 2009.
* Intel Core i3 and i5 processors, released in January 2010
* Intel 6-core processor, codenamed Gulftown
* Intel i7-970, was released in late July 2010, priced at approximately US$900
* AMD FX Series processors, codenamed Zambezi and based on AMD's Bulldozer architecture, were released in October 2011. The technology used a 32 nm SOI process, two CPU cores per module, and up to four modules, ranging from a quad-core design costing approximately US$130 to a $280 eight-core design.
* Ambarella Inc. announced the availability of the A7L system-on-a-chip circuit for digital still cameras, providing 1080p60 high-definition video capabilities in September 2011

### Chips using 24–28 nm technology

* SK Hynix announced that it could produce a 26 nm flash chip with 64 Gb capacity; Intel Corp. and Micron Technology had by then already developed the technology themselves. Announced in 2010.
* Toshiba announced that it was shipping 24 nm flash memory NAND devices on August 31, 2010.
* In 2016 MCST's 28 nm processor Elbrus-8S went for serial production.

### Chips using 22 nm technology

* Intel Core i7 and Intel Core i5 processors based on Intel's Ivy Bridge 22 nm technology for series 7 chip-sets went on sale worldwide on April 23, 2012.

### Chips using 20 nm technology

* Samsung Electronics began mass production of 64 Gb NAND flash memory chips using a 20 nm process in 2010.
* Nvidia Tegra X1 (Nintendo Switch and Nvidia Shield TV)

### Chips using 16 nm technology

* TSMC first began 16 nm FinFET chip production in 2013.
* Nvidia Tegra X1+ (later Nintendo Switch and Nvidia Shield TV models)

### Chips using 14 nm technology

* Intel Core i7 and Intel Core i5 processors based on Intel's Broadwell 14 nm technology was launched in January 2015.
* AMD Ryzen processors based on AMD's Zen or Zen+ architectures and which uses 14 nm FinFET technology.

### Chips using 10 nm technology

* Samsung announced that it had begun mass production of multi-level cell (MLC) flash memory chips using a 10 nm process in 2013. On 17 October 2016, Samsung Electronics announced mass production of SoC chips at 10 nm.
* TSMC began commercial production of 10 nm chips in early 2016, before moving onto mass production in early 2017.
* Samsung began shipping Galaxy S8 smartphone in April 2017 using the company's 10 nm processor.
* Apple delivered second-generation iPad Pro tablets powered with TSMC-produced Apple A10X chips using the 10 nm FinFET process in June 2017.

### Chips using 7 nm technology

* TSMC began risk production of 256 Mbit SRAM memory chips using a 7 nm process in April 2017.
* Samsung and TSMC began mass production of 7 nm devices in 2018.
* Apple A12 and Huawei Kirin 980 mobile processors, both released in 2018, use 7 nm chips manufactured by TSMC.
* AMD began using TSMC 7 nm starting with the Vega 20 GPU in November 2018, with Zen 2-based CPUs and APUs from July 2019, and for both PlayStation 5 and Xbox Series X/S consoles' APUs, released both in November 2020.

### Chips using 5 nm technology

* Samsung began production of 5 nm chips (5LPE) in late 2018.
* TSMC began production of 5 nm chips (CLN5FF) in April 2019.

### Chips using 3 nm technology

* TSMC have announced plans to release 3 nm devices during 2021–2022.
* Samsung Electronics have begun risk production of 3 nm GAAFET transistors in June of 2022.
* Apple A17 Pro (iPhone 15 Pro)