# Algis Jurgis Kundrotas

Algis Jurgis Kundrotas (born 15 July 1950) is a Lithuanian physicist, habilitated doctor of physical sciences, university professor and independent researcher.

## Life

Kundrotas was born on 15 July 1950 in Užšustis, Šilutė district, Lithuania. He went to Vilnius Pedagogical Institute from 1968 to 1972 where he obtained his diploma cum laude in physics. He completed his subsequent studies in Vilnius at the Semiconductor Physics Institute from 1976 to 1979 and became a candidate of physical and mathematical sciences (Doctor of Natural Sciences; Ph.D. degree) in 1981, when he defended his dissertation at Vilnius University (thesis on: Investigation of kinetic processes in narrow gap semiconductor PtSb2). He became a doctor of physical sciences in Vilnius Semiconductor Physics Institute in 1999 (thesis on: Impact ionisation of shallow impurities and excitons in A3B5 semiconductors and quantum wells).
He was married to Bronislava (Tamašauskaitė) Kundrotienė, who graduated from the Pedagogical Institute in Vilnius. They gave birth to 3 children; daughters Monika Granja (1974), Agne Johannessen (1977), and a son Benas Kundrotas (1978).

## Career

From 1980 to 2015, Kundrotas worked at the Semiconductor Physics Institute. From 1980 to 1986, he was a Junior Research Associate and from 198 to 1987, a Research Associate. He became a Senior Research Associate from 1987 to 2000. In 2001, he was appointed as Chief Researcher, a position he held until 2010. From 2010 until the end of his career in 2015, Kundrotas was a Senior Researcher at the Semiconductor Physics Institute of Center for Physical Sciences and Technology (FTMC).
He started his university teaching career as a university professor in 2002 at Gediminas Technical University in Vilnius, Lithuania, where he was employed at the Physics Department from 2002 to 2015. He lectured in the field of mathematical modelling of physical processes for Master's students. From 2009, he was Certificated Professor of physical sciences of the Vilnius Gediminas' Technical University. After finishing his professional scientific career in 2015, he has also been working as an independent scientific researcher with main scientific field in physics of semiconductors and semiconductor nanostructures.

### Awards

In 2000, He was awarded the Lithuanian National Award in Science. In March 2001, he was awarded along Professor Adolf Dargis and Dr. Neria Žurauskienė the National Award for Merit in Physical Sciences for the year 2000 for the series of papers Shock and Tunnel Ionization in Semiconductors.

## Selected bibliography

* Kundrotas, J.; Dargys, A. (1986). "Electron tunneling from an ultrathin quantum well in constant and alternating electric fields". Physica Status Solidi B. 134 (1). Wiley Online Library: 267–274. Bibcode:1986PSSBR.134..267K. doi:10.1002/pssb.2221340132. Retrieved 4 February 2024.
* A micro-calculator for work and leisure (Mikrokalkuliatorius darbui ir poilsiui, 1986)
* Handbook on physical properties of Ge, Si, GaAs and InP. Open Library org. 1994.
* Kundrotas, J.; Dargys, A.; Cesna, A. (1996). "The hot electron distribution function under impurity breakdown conditions". Physica Status Solidi B. 194 (2). Wiley Online Library: 649–660. Bibcode:1996PSSBR.194..649K. doi:10.1002/pssb.2221940220. Retrieved 4 February 2024.
* Kundrotas, J. (1999). "Impact ionization coefficient of excitons in n-GaAs". Semiconductor Science and Technology. 14 (5). IOP Science / Semiconductor Science and Technology: 461–464. Bibcode:1999SeScT..14..461K. doi:10.1088/0268-1242/14/5/016. Retrieved 4 February 2024.
* Jurgis Kundrotas. GaAs/AlGaAs savybės (GaAs/AlGaAs properties), Puslaidininkių fizikos institutas (Institute of Semiconductor Physics), Vilnius (2001) 168 pages
* Kundrotas, J.; Čerškus, A.; Ašmontas, S.; Valušis, G.; Sherliker, B.; Halsall, M. P.; Steer, M. J.; Johannessen, E.; Harrison, P. (2005). "Excitonic and impurity-related optical transitions in Be δ-doped GaAs∕AlAs multiple quantum wells: Fractional-dimensional space approach". Physical Review B. 72 (23). Physical Review B (covering condensed matter and materials physics): 235322. Bibcode:2005PhRvB..72w5322K. doi:10.1103/PhysRevB.72.235322. Retrieved 4 February 2024.
* Kundrotas, J.; Čerškus, A.; Ašmontas, S.; Valušis, G.; Halsall, M. P.; Johannessen, E.; Harrison, P. (2007). "Impurity-induced Huang–Rhys factor in beryllium δ-doped GaAs/AlAs multiple quantum wells: fractional-dimensional space approach". Semiconductor Science and Technology. 22 (9). IOP Science (Semiconductor Science and Technology): 1070–1076. Bibcode:2007SeScT..22.1070K. doi:10.1088/0268-1242/22/9/016. Retrieved 4 February 2024.
* "Light emission lifetimes in p-type δ-doped GaAs/AlAs multiple quantum wells near the Mott transition". Journal of Applied Physics. 2012. Retrieved 4 February 2024.
* Kundrotas, Jurgis; Čerškus, Aurimas; Valušis, Gintaras; Linfield, Edmund H.; Johannessen, Erik; Johannessen, Agne (21 January 2015). "Dynamics of free carriers – neutral impurity related optical transitions in Be and Si δ-doped GaAs/AlAs multiple quantum wells: Fractional-dimensional space approach". Lithuanian Journal of Physics. 54 (4). doi:10.3952/physics.v54i4.3012. Retrieved 4 February 2024.
* Benas Kundrotas, Algis Jurgis Kundrotas. Modern Car Handbook. Vilnius (2020); 242 pages; ISBN 978-609-475-496-8