Certification of a standard reference material for the determination of interstitial oxygen concentration in semiconductor silicon by infrared spectrophotometry /
Rennex, Brian.
National Institute of Standards and Technology (U.S.)
Gaithersburg, MD : U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology ; Washington, DC : For sale by the Supt. of Docs., U.S. G.P.O.,
1994.
"Issued August 1994."
Includes bibliographical references (p. 15).
Silicon