Simulation of Semiconductor Processes and Devices 2007 [electronic resource] : SISPAD 2007 /
International Conference on Simulation of Semiconductor Processes and DevicesCorporate Author
International Conference on Simulation of Semiconductor Processes and Devices(12th :2007 :Vienna, Austria)
International Conference on Simulation of Semiconductor Processes and Devices
Grasser, Tibor.editor.
Selberherr, Siegfried.editor.
The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta­ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec­ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.
Description based upon print version of record.
Includes bibliographical references and index.
Nanomanufacturing Technology and Opportunities Through Physically-Based Simulation -- Atomistic Modeling of Defect Diffusion in SiGe -- Diffusion and Deactivation of As in Si: Combining Atomistic and Continuum Simulation Approaches -- Molecular Dynamics Modeling of Octadecaborane Implantation into Si -- High Performance, Strained-Ge, Heterostructure p-MOSFETs -- Strain Induced Drain-Current Enhancement Mechanism in Short-Channel Bulk Ge-pMOSFETs with Different Channel and Surface Orientations -- Validation of the Effect of Full Stress Tensor in Hole Transport in Strained 65nm-Node pMOSFETs -- Modeling and Characterization of Advanced Phosphorus Ultra Shallow Junction Using Germanium and Carbon Coimplants -- Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth -- Strain Energy Driven and Curvature Driven Grain Boundary Migration in 3D-IC Cu Vias -- Modeling of Re-Sputtering Induced Bridge of Tungsten Bit-Lines for NAND Flash Memory Cell with 37nm Node Technology -- Efficient Mask Design for Inverse Lithography Technology Based on 2D Discrete Cosine Transformation (DCT) -- Modeling of Deep Reactive Ion Etching in a Three-Dimensional Simulation Environment -- Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs -- Surface Roughness Scattering in Ultrathin-Body SOI MOSFETs -- Pearson Effective Potential vs. Multi-Subband Monte-Carlo Simulation for Electron Transport in DG nMOSFETs -- Inclusion of the Pauli Principle in the Langevin-Boltzmann Equation for Bulk Systems -- Energy Conservation in Collisional Broadening -- A Simple Technique for the Monte Carlo Simulation of Transport in Quantum Wells -- Upcoming Challenges for Process Modeling -- Physics-Based Simulation of 1/f Noise in MOSFETs under Large-Signal Operation -- Thin Body Effects to Suppress Random Dopant Fluctuations in Nano-Scaled MOSFETs -- ‘Atomistic’ Mesh Generation for the Simulation of Semiconductor Devices -- Line Edge and Gate Interface Roughness Simulations of Advanced VLSI SOI-MOSFETs -- Impact of Shear Strain and Quantum Confinement on Channel nMOSFET with High-Stress CESL -- Analysis of Novel Stress Enhancement Effect Based on Damascene Gate Process with eSiGe S/D for pFETs -- Nonlinear Piezoresistance Effect in Devices with Stressed Etch Stop Liner -- 3D Stress, Process and Device Simulation: Extraction of the Relevant Stress Tensor -- Impact of Two-Step Recessed SiGe S/D Engineering for Advanced pMOSFETs of 32 nm Technology Node and Beyond -- Simulation Study of Multiple FIN FinFET Design for 32nm Technology Node and Beyond -- Device Design and Scalability of an Impact Ionization MOS Transistor with an Elevated Impact Ionization Region -- A Prototype Wafer Processing TCAD Tool Composed of BMD Simulation Module, Metal Gettering and Thermal Stress/Slip Functions for Scaled Device Design Phase -- Compact Modeling of Phase-Change Memories -- Modeling of NBTI Degradation for SiON pMOSFET -- Modeling Study of Ultra-Thin Ge Layers Using Tight-Binding, LCBB and kp Methods -- Analysis of Silicon Dioxide Interface Transition Region in MOS Structures -- Tunneling Properties of MOS Systems Based on High-k Oxides -- First-Principles Investigation on Oxide Trapping -- A Self-Consistent Simulation of InSb Double-Gate MOSFETs Using Full-Band Tight-Binding Approach -- Influence of Oxygen Composition and Carbon Impurity on Electronic Reliability of HfO2 -- Upcoming Physics Challenges for Device Modeling -- Transient Characterization of Interface Traps in 4H-SiC MOSFETs -- Electro-Thermal, Transient, Mixed-Mode 2D Simulation Study of SiC Power Thyristors Operating Under Pulsed-Power Conditions -- Numerical Design Study on the Optimal p-Emitter Thickness of 4H-SiC Bipolar Diodes -- Study of Time-Periodic Avalanche Breakdown Occurring in VLD Edge Termination Structures -- Simulation of Magnetotransport in Hole Inversion Layers Based on Full Subbands -- Monte Carlo Study on Number of Scattering Events for Quasi-Ballistic Transport in MOSFETs -- Modeling of Macroscopic Transport Parameters in Inversion Layers -- Study of the Junction Depth Effect on Ballistic Current Using the Subband Decomposition Method -- Transport in Silicon Nanowire and Single-Electron Transistors -- Self-Consistent Simulations of Nanowire Transistors Using Atomistic Basis Sets -- Full-Band Atomistic Study of Source-To-Drain Tunneling in Si Nanowire Transistors -- Modeling Carbon Nanotube Electron-Phonon Resonances Shows Terahertz Current Oscillations -- Crystalline Orientation Effects on Ballistic Hole Current in Ultrathin DG SOI MOSFETs -- Numerical Simulation of Field Emission in the Surface Conduction Electron-Emitter Display -- Microscopic Modelling of Quantum Well Solar Cells -- Monte Carlo Simulation of Time-Dependent Operation of Quantum Cascade Lasers -- Multiscale Simulation of Electronic and Optoelectronic Devices with TiberCAD -- Hopping Transport of Electrons via Si-Dot -- Simulation of Spin Transport Properties in Schottky Barrier FET Using Monte Carlo Method -- Discontinuous Galerkin Solver for the Semiconductor Boltzmann Equation -- Modeling of Shock Waves in Two-Dimensional Electron Channels: Effect of Tsunami -- Simulation of Lag and Current Slump in AlGaN/GaN HEMTs as Affected by Buffer Trapping -- Electrothermal Monte Carlo Study of Charge Confinement in GaN HFETs -- Hydrodynamic Modeling of AlGaN/GaN HEMTs -- Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Grating Field Plates -- Modelling of Hot Electron Effects in GaN/AlGaN HEMT with AlN Interlayer -- Compact Modeling for New Transistor Structures -- Compact Double-Gate MOSFET Model Correctly Predicting Volume-Inversion Effects -- Modeling NAND Flash Memories for Circuit Simulations -- Surface-Potential-Based Compact Model for Quantum Effects in Planar and Double-Gate MOSFET -- Statistical Compact Model Parameter Extraction Strategy for Intrinsic Parameter Fluctuation -- Calibrated Hydrodynamic Simulation of Deeply-Scaled Well-Tempered Nanowire Field Effect Transistors -- The Effect of Optical Phonon Scattering on the On-Current and Gate Delay Time of CNT-FETs -- Monte Carlo Modeling of Schottky Contacts on Semiconducting Carbon Nanotubes -- Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions -- A Simplified Quantum Mechanical Model for the Electron Distribution in a Si Nanowire -- Efficient Green’s Function Algorithms for Atomistic Modeling of Si Nanowire FETs -- Influence of Uniaxial [110] Stress on the Silicon Conduction Band Structure: Stress Dependence of the Nonparabolicity Parameter -- Maxwell Equations on Unstructured Grids Using Finite-Integration Methods -- Adaptive Time Discretization for a Transient Quantum Drift-Diffusion Model -- MDS — A New, Highly Extensible Device Simulator -- Influence of the Poole-Frenkel Effect on Programming and Erasing in Charge Trapping Memories -- On the Magnetic Field Extraction for On-Chip Inductance Calculation -- EMC Simulation of THz Emission from Semiconductor Devices -- Enhanced Band-to-Band Tunneling-Induced-Hot-Electron Injection in P-Channel Flash by SiGe Channel and HfO2 Tunnel Dielectric -- Challenges in 3D Process Simulation for Advanced Technology Understanding -- Characteristic Fluctuation Dependence on Discrete Dopant for 16nm SOI FinFETs at Different Temperature -- Hot-Carrier Behaviour of a 0.35 µm High-Voltage n-Channel LDMOS Transistor -- Dynamic Monte Carlo Simulation of an Amorphous Organic Device -- Charge Injection Model in Organic Light-Emitting Diodes Based on a Master Equation -- Simulation of Analog/RF Performance and Process Variation in Nanowire Transistors -- Analysis of Process-Geometry Modulations through 3D TCAD -- Asymmetrical Triple-Gate FET -- Process Variation-A ware Estimation of Static Leakage Power in Nano CMOS -- The Optimization of Low Power Operation SRAM Circuit for 32nm Node -- Device Design Evaluation of Multigate FETs Using Full 3D Process and Device TCAD Simulation -- Modeling and Extraction of Effective Lateral Doping Profile Using the Relation of On-Resistance vs. 
Overlap Capacitance in (100) and (110)-Oriented MOSFETs -- Molecular Orbital Examination of Negative-Bias Temperature Instability Mechanism -- Process Margin Analysis and Yield Enhancement Through Statistical Topography Simulation -- Efficient Coupling of Monte Carlo and Level Set Methods for Topography Simulation -- Strained Contact Etch Stop Layer Integration: Geometry Design Impact -- Modeling of Deposition During C5F8/CO/O2/Ar Plasma Etching Using Topography and Composition Simulation -- Ab Initio Calculations of the Transport Through Single Molecules and Carbon Nanotubes -- Three-Dimensional Sacrificial Etching -- Atomistic study of Metal/High-K interface -- Ab-Initio Calculations of Indium Migration in Uniaxial Strained Silicon -- Noise Simulation of Nanoscale Devices Based on the Non-Equilibrium Green’s Function Formalism -- RDF Analysis of Small-Signal Equivalent Circuit Parameters in MOSFET Devices.
The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta­ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec­ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.
Electronics.
Microelectronics.
Optical materials.
Electronic materials.
Nanotechnology.
Computational intelligence.
Computer simulation.
Electronics and Microelectronics, Instrumentation.
Optical and Electronic Materials.
Nanotechnology.
Computational Intelligence.
Simulation and Modeling.