Fowler-Nordheim Field Emission [electronic resource] : Effects in Semiconductor Nanostructures /
Bhattacharya, Sitangshu.author.
Ghatak, Kamakhya Prasad.author.
This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization and quantum wires of the aforementioned superlattices. The FNFE in opto-electronic materials and their quantum confined counterparts is studied in the presence of light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The importance of band gap measurements in opto-electronic materials in the presence of external fields is discussed from this perspective. This monograph contains 200 open research problems which form the very core and are useful for Ph. D students and researchers. The book can also serve as a basis for a graduate course on field emission from solids.
Description based upon print version of record.
Includes bibliographical references and indexes.
PART–I: FOWLER-NORDHEIM FIELD EMISSION FROM QUANTUM WIRES AND SUPERLATTICES OF NON-PARABOLIC MATERIALS -- Field emission from quantum wires of non-parabolic materials -- Field emission from quantum wire superlattices of non-parabolic materials -- Field emission from quantum confined materials under magnetic quantization -- Field emission from super lattices of non-parabolic materials under magnetic quantization -- PART–II: FOWLER-NORDHEIM FIELD EMISSION FROM QUANTUM CONFINED OPTOELECTRONIC MATERIALS IN THE PRESENCE OF LIGHT WAVES -- Field emission from quantum confined materials in the presence of light waves -- PART – III: FOWLER-NORDHEIM FIELD EMISSION FROM QUANTUM CONFINED OPTOELECTRONIC MATERIALS IN THE PRESENCE OF INTENCE ELECTRIC FIELD -- Field emission from quantum confined optoelectronic materials -- Applications and Brief Review of Experimental Results.
This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization and quantum wires of the aforementioned superlattices. The FNFE in opto-electronic materials and their quantum confined counterparts is studied in the presence of light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The importance of band gap measurements in opto-electronic materials in the presence of external fields is discussed from this perspective. This monograph contains 200 open research problems which form the very core and are useful for Ph. D students and researchers. The book can also serve as a basis for a graduate course on field emission from solids.
Semiconductors.
Optical materials.
Electronic materials.
Nanotechnology.
Nanoscale science.
Nanoscience.
Nanostructures.
Microwaves.
Optical engineering.
Semiconductors.
Optical and Electronic Materials.
Nanotechnology.
Nanoscale Science and Technology.
Microwaves, RF and Optical Engineering.
Springer series in solid-state sciences