Springer Handbook of Crystal Growth [electronic resource] /
Dhanaraj, Govindhan.editor.
Byrappa, Kullaiah.editor.
Prasad, Vishwanath.editor.
Dudley, Michael.editor.
Over the years, many successful attempts have been made to describe the art and science of crystal growth. Most modern advances in semiconductor and optical devices would not have been possible without the development of many elemental, binary, ternary, and other compound crystals of varying properties and large sizes. The objective of the Springer Handbook of Crystal Growth is to present state-of-the-art knowledge of both bulk and thin-film crystal growth. The goal is to make readers understand the basics of the commonly employed growth processes, materials produced, and defects generated. Almost 100 leading scientists, researchers, and engineers from 22 different countries from academia and industry have been selected to write chapters on the topics of their expertise. They have written 52 chapters on the fundamentals of bulk crystal growth from the melt, solution, and vapor, epitaxial growth, modeling of growth processes and defects, techniques of defect characterization as well as some contemporary special topics. This unique effort will provide readers with a fundamental understanding of crystal growth with the latest instrumentation and techniques available for crystal and thin-film fabrication. It is written and compiled for professionals and practitioners, materials scientists, physicists, and chemists at universities and in industrial research and production. Key Topics Crystal growth and characterization fundamentals Bulk crystal growth from the melt, solution, and vapor Thin-film epitaxial growth Modeling of growth processes Defect formation and morphology Crystalline material characterization and analysis Features Covers basic concepts, materials, properties, and fabrication. Contains over 1,200 color illustrations. Numerous comprehensive tables. Features exhaustive references to approved data. Fully searchable DVD-ROM for quick access to data.
Description based upon print version of record.
Includes bibliographical references and index.
Fundamentals of Crytal Growth and Defect Formation -- Crystal Growth Techniques and Characterization: An Overview -- Nucleation at Surfaces -- Morphology of Crystals Grown from Solutions -- Generation and Propagation of Defects During Crystal Growth -- Single Crystals Grown Under Unconstrained Conditions -- Defect Formation During Crystal Growth from the Melt -- Crystal Growth from Melt Techniques -- Indium Phosphide: Crystal Growth and Defect Control by Applying Steady Magnetic Fields -- Czochralski Silicon Single Crystals for Semiconductor and Solar Cell Applications -- Czochralski Growth of Oxide Photorefractive Crystals -- Bulk Crystal Growth of Ternary III-V Semiconductors -- Growth and Characterization of Antimony-Based Narrow-Bandgap III-V Semiconductor Crystals for Infrared Detector Applications -- Crystal Growth of Oxides by Optical Floating Zone Technique -- Laser-Heated Pedestal Growth of Oxide Fibers -- Synthesis of Refractory Materials by Skull Melting Technique -- Crystal Growth of Laser Host Fluorides and Oxides -- Shaped Crystal Growth -- Solution Growth of Crystals -- Bulk Single Crystals Grown from Solution on Earth and in Microgravity -- Hydrothermal Growth of Polyscale Crystals -- Hydrothermal and Ammonothermal Growth of ZnO and GaN -- Stoichiometry and Domain Structure of KTP-Type Nonlinear Optical Crystals -- High-Temperature Solution Growth: Application to Laser and Nonlinear Optical Crystals -- Growth and Characterization of KDP and Its Analogs -- Crystal Growth from Vapor Method -- Growth and Characterization of Silicon Carbide Crystals -- AlN Bulk Crystal Growth by Physical Vapor Transport -- Growth of Single-Crystal Organic Semiconductors -- Growth of III-Nitrides with Halide Vapor Phase Epitaxy (HVPE) -- Growth of Semiconductor Single Crystals from Vapor Phase -- Epitaxial Growth and Thin Films -- Epitaxial Growth of Silicon Carbide by Chemical Vapor Deposition -- Liquid-Phase Electroepitaxy of Semiconductors -- Epitaxial Lateral Overgrowth of Semiconductors -- Liquid-Phase Epitaxy of Advanced Materials -- Molecular-Beam Epitaxial Growth of HgCdTe -- Metalorganic Vapor-Phase Epitaxy of Diluted Nitrides and Arsenide Quantum Dots -- Formation of SiGe Heterostructures and Their Properties -- Plasma Energetics in Pulsed Laser and Pulsed Electron Deposition -- Modeling in Crystal Growth and Defects -- Convection and Control in Melt Growth of Bulk Crystals -- Vapor Growth of III Nitrides -- Continuum-Scale Quantitative Defect Dynamics in Growing Czochralski Silicon Crystals -- Models for Stress and Dislocation Generation in Melt Based Compound Crystal Growth -- Mass and Heat Transport in BS and EFG Systems -- Defects Characterization and Techniques -- Crystalline Layer Structures with X-Ray Diffractometry -- X-Ray Topography Techniques for Defect Characterization of Crystals -- Defect-Selective Etching of Semiconductors -- Transmission Electron Microscopy Characterization of Crystals -- Electron Paramagnetic Resonance Characterization of Point Defects -- Defect Characterization in Semiconductors with Positron Annihilation Spectroscopy -- Special Topics in Crystal Growth -- Protein Crystal Growth Methods -- Crystallization from Gels -- Crystal Growth and Ion Exchange in Titanium Silicates -- Single-Crystal Scintillation Materials -- Silicon Solar Cells: Materials, Devices, and Manufacturing -- Wafer Manufacturing and Slicing Using Wiresaw.
Over the years, many successful attempts have been made to describe the art and science of crystal growth. Most modern advances in semiconductor and optical devices would not have been possible without the development of many elemental, binary, ternary, and other compound crystals of varying properties and large sizes. The objective of the Springer Handbook of Crystal Growth is to present state-of-the-art knowledge of both bulk and thin-film crystal growth. The goal is to make readers understand the basics of the commonly employed growth processes, materials produced, and defects generated. Almost 100 leading scientists, researchers, and engineers from 22 different countries from academia and industry have been selected to write chapters on the topics of their expertise. They have written 52 chapters on the fundamentals of bulk crystal growth from the melt, solution, and vapor, epitaxial growth, modeling of growth processes and defects, techniques of defect characterization as well as some contemporary special topics. This unique effort will provide readers with a fundamental understanding of crystal growth with the latest instrumentation and techniques available for crystal and thin-film fabrication. It is written and compiled for professionals and practitioners, materials scientists, physicists, and chemists at universities and in industrial research and production. Key Topics Crystal growth and characterization fundamentals Bulk crystal growth from the melt, solution, and vapor Thin-film epitaxial growth Modeling of growth processes Defect formation and morphology Crystalline material characterization and analysis Features Covers basic concepts, materials, properties, and fabrication. Contains over 1,200 color illustrations. Numerous comprehensive tables. Features exhaustive references to approved data. Fully searchable DVD-ROM for quick access to data.
Solid state physics.
Physical chemistry.
Mechanics.
Mechanics, Applied.
Spectroscopy.
Microscopy.
Crystallography.
Materials science.
Solid State Physics.
Physical Chemistry.
Theoretical and Applied Mechanics.
Spectroscopy and Microscopy.
Crystallography and Scattering Methods.
Materials Science, general.