Monitoring of FinFET Characteristics Using  $\Delta V_{\text{DIBLSS}}/(I_{\text{on}}/I_{\text{off}})$  and  $\Delta V_{\text{DIBL}}/(I_{\text{on}}/I_{\text{off}})$

In this paper, we present a descriptive analysis of a performance index, <inline-formula> <tex-math notation="LaTeX">$\Delta V_{\mathrm{ DIBLSS}}/(I_{\mathrm{ on}}/I_{\mathrm{ off}})$ </tex-math></inline-formula>, used for performance monitoring. Scaled n- and p-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) (planar and FinFET devices) are included for comparison of performance trends. Also, the simplified <inline-formula> <tex-math notation="LaTeX">$\Delta V_{\mathrm{ DIBL}}/(I_{\mathrm{ on}}/I_{\mathrm{ off}})$ </tex-math></inline-formula> for monitoring the electrical characteristics of MOSFET devices is proposed due to the “quick measurements” required in the last step of the semiconductor manufacturing process. <inline-formula> <tex-math notation="LaTeX">$\Delta V_{\mathrm{ DIBL}}/(I_{\mathrm{ on}}/I_{\mathrm{ off}})$ </tex-math></inline-formula> only accounts for drain-induced barrier lowering in its numerator and on/off current ratio in its denominator. The calculation process for <inline-formula> <tex-math notation="LaTeX">$\Delta V_{\mathrm{ DIBL}}/(I_{\mathrm{ on}}/I_{\mathrm{ off}})$ </tex-math></inline-formula> is much quicker than for <inline-formula> <tex-math notation="LaTeX">$\Delta V_{\mathrm{ DIBLSS}}/(I_{\mathrm{ on}}/I_{\mathrm{ off}})$ </tex-math></inline-formula>, where we need to make an extra measurement of the value of the subthreshold swing. Performance metrics, such as <inline-formula> <tex-math notation="LaTeX">$I_{\mathrm{ on}}/I_{\mathrm{ off}}$ </tex-math></inline-formula> and intrinsic gain, <inline-formula> <tex-math notation="LaTeX">$g_{m} \times r_{o}$ </tex-math></inline-formula>, are reported using <inline-formula> <tex-math notation="LaTeX">$\Delta V_{\mathrm{ DIBLSS}}/(I_{\mathrm{ on}}/I_{\mathrm{ off}})$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$\Delta V_{\mathrm{ DIBL}}/(I_{\mathrm{ on}}/I_{\mathrm{ off}})$ </tex-math></inline-formula>. <inline-formula> <tex-math notation="LaTeX">$\Delta V_{\mathrm{ DIBLSS}}$ </tex-math></inline-formula> of about 100 mV in scaled MOSFETs is required to ensure that the gate control is strong. Since <inline-formula> <tex-math notation="LaTeX">$I_{\mathrm{ on}}/I_{\mathrm{ off}}$ </tex-math></inline-formula> is a sensitive function of threshold voltage, the estimates of the <inline-formula> <tex-math notation="LaTeX">$\Delta V_{\mathrm{ DIBLSS}}/(I_{\mathrm{ on}}/I_{\mathrm{ off}})$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$\Delta V_{\mathrm{ DIBL}}/(I_{\mathrm{ on}}/I_{\mathrm{ off}})$ </tex-math></inline-formula> are therefore dependent on the design of threshold voltage. In planar MOSFETs, small values of <inline-formula> <tex-math notation="LaTeX">$\Delta V_{\mathrm{ DIBLSS}}/(I_{\mathrm{ on}}/I_{\mathrm{ off}})$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$\Delta V_{\mathrm{ DIBL}}/(I_{\mathrm{ on}}/I_{\mathrm{ off}})$ </tex-math></inline-formula> are hard to achieve. However, in FinFETs, it is easy to achieve the performance requirements due to its tri-gate structure.