Investigation on Impact of Doped HfO$_{2}$ Thin Film Ferro-Dielectrics on FDSOI NCFET Under Back-Gate Bias Influence

In this article, negative capacitance effect on metal-ferro-metal-insulator-semiconductor (MFMIS) type FDSOI negative-capacitance-FET (NCFET) has been investigated by considering two well known thin-film ferro-dielectric (<inline-formula><tex-math notation="LaTeX">$ Fe$</tex-math></inline-formula>) materials HZO (zirconium:HfO<inline-formula><tex-math notation="LaTeX">$_{2}$</tex-math></inline-formula>) and HSO (silicon:HfO<inline-formula><tex-math notation="LaTeX">$_{2}$</tex-math></inline-formula>). The investigations are carried out in a well calibrated TCAD environment, where the gate-charge (<inline-formula><tex-math notation="LaTeX">$ Q_{G}$</tex-math></inline-formula>) is extracted from the TCAD simulation. And, subsequently computing the ferro-voltage (<inline-formula><tex-math notation="LaTeX">$ V_{Fe}$</tex-math></inline-formula>) across <inline-formula><tex-math notation="LaTeX">$ Fe$</tex-math></inline-formula>-capacitor to estimate the total effective gate voltage (<inline-formula><tex-math notation="LaTeX">$ V_{GS}$</tex-math></inline-formula>) on the gate-stack of FDSOI NCFET. The depicted values are subjected to increment in <inline-formula><tex-math notation="LaTeX">$ Fe$</tex-math></inline-formula>-thickness (<inline-formula><tex-math notation="LaTeX">$ t_{Fe}$</tex-math></inline-formula>) to optimize HZO and HSO <inline-formula><tex-math notation="LaTeX">$ Fe$</tex-math></inline-formula>-materials for FDSOI NCFET(s). The optimised NCFET(s) are later levied with back-gate bias (V<inline-formula><tex-math notation="LaTeX">$_{\mathrm{B}}$</tex-math></inline-formula>) variation with the motivation of utilizing the attributes of FDSOI MOSFETs of V<inline-formula><tex-math notation="LaTeX">$_{\text{TH}}$</tex-math></inline-formula> shift can further enhance the device performance. Depicted results has shown the HZO-<inline-formula><tex-math notation="LaTeX">$ Fe$</tex-math></inline-formula> offers superior improvement in sub-threshold slope (SS), peak-transconductance (g<inline-formula><tex-math notation="LaTeX">$ _{m}$</tex-math></inline-formula>) and off-current (I<inline-formula><tex-math notation="LaTeX">$_{\text{OFF}}$</tex-math></inline-formula>) at lower <inline-formula><tex-math notation="LaTeX">$ t_{Fe}$</tex-math></inline-formula> with the expense of lower endurance to hysteresis. On the other hand, the HSO-<inline-formula><tex-math notation="LaTeX">$ Fe$</tex-math></inline-formula> predicts improvement in SS, peak-g<inline-formula><tex-math notation="LaTeX">$ _{m}$</tex-math></inline-formula> and I<inline-formula><tex-math notation="LaTeX">$_{\text{OFF}}$</tex-math></inline-formula> with higher endurance towards hysteresis in-spite of <inline-formula><tex-math notation="LaTeX">$ t_{Fe}$</tex-math></inline-formula> thickness under sub-10 nm regime. Similarly, the V<inline-formula><tex-math notation="LaTeX">$_{\mathrm{B}}$</tex-math></inline-formula> variation have shown similar results where the HSO NCFET has predicted slightly higher enhancement in performance aspect than HZO NCFET owing to the V<inline-formula><tex-math notation="LaTeX">$_{\text{TH}}$</tex-math></inline-formula> shift phenomena attributed to FDSOI architecture and HSO-<inline-formula><tex-math notation="LaTeX">$ Fe$</tex-math></inline-formula> comprehensible polarization duality.