Evaluation of die attach materials for high temperature power electronics appictions and analysis of the Ag particles sintering solution

Sintering of Ag particles is an interesting solution as die-attach material for power electronics packaging in high temperature applications because it offers the outstanding properties of Ag (including a 961 oC melting point) using low process temperature ( 300 oC). In this work we have studied the processing methods for sintering Ag particles and we performed a comparative analysis with other die-attach materials based on thermal cycling. We have first analysed the effect of the main sintering process parameters on the final characteristics of the Ag die-attach layers with the aim at obtaining information for the direct application of Ag pastes in power assemblies, and for understanding the main mechanisms governing the properties of this material. This task required the development of specific set-ups and tools allowing the settling of different process conditions. The sintering parameters analysed were pressure, temperature, time, Ag paste drying method and substrate surface condition. The analysis based on FIB microsections and die-shear tests revealed that the densification of the Ag layer and its adherence to the Cu substrate clearly improve with higher sintering pressure and temperature, and is practically not affected with time. In the centre of the Ag layer, the level of densification is lower than in the periphery, where, in addition, a thin Cu oxide layer appears. Those facts evidenced that the die-attach periphery is strongly influenced by the surrounding ambient (air) and that in this region the organic components of the original paste are better eliminated than in the centre during the Ag paste drying step. This process has been identified as perhaps the most critical one during sintering and a drying method without the die on top of the paste has shown the best results. An interesting result of the study is that sintering pressure and temperature can be adjusted complementarily to obtain a given die-attach adhesion (die-shear value). In this way, the sintering process can be adapted to different assembly conditions such as, for example, samples compatible with high pressures but not with high temperatures or vice versa. A comparative analysis of the thermo-mechanical performances with other die-attach materials (AuGe, and PbSnAg) under harsh thermal cycling tests (-65 oC to 275 oC) has been carried out using test vehicles formed by several dice (Si or SiC) and Cu substrates (bare Cu, Ag and Au plated surface). The test vehicles were cycled in a specifically developed set-up and evaluated with an experimental protocol based on die-shear tests, failure mode determination and SAM inspection. The best initial die-shear strength was obtained in all cases for sintered Ag particles, contrasting with the highest degradation rate observed for this material dried with chip on top of the paste. In contrast, for the drying method without die, sintered Ag shows even better cycling results than the solder alloys. Concerning the semiconductor material, the thermal cycling results show that the degradation rate is faster for SiC- than for Si-based test vehicles, while concerning strictly the solder alloys PbSnAg shows better results than AuGe. In this sense, a thermo-mechanical simulation work was performed to understand the degradation mechanisms during thermal cycling. The simulations demonstrated that the higher normal stresses associated with temperature swings were located at the die-attach/substrate interface, with the maximum values in the corners of the die and its periphery. These results qualitatively explain the SAM images showing concentric die-attach delamination patterns and the fact that "stiffer" materials (with higher Young modulus, such as SiC and AuGe) show faster degradation rates.