High-Current and Short-Circuit Capability SOI-LIGBT With Double-Integrated Self-Adapted MOS-Resistors

A 300-V-rated high-performance SOI-LIGBT with double-integrated MOS resistors (MR LIGBT) is proposed and its mechanism is investigated. It features double-integrated self-adapted MOS resistors <inline-formula> <tex-math notation="LaTeX">${R}_{\text {M1}}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${R}_{\text {M2}}$ </tex-math></inline-formula>. <inline-formula> <tex-math notation="LaTeX">${R}_{\text {M1}}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${R}_{\text {M2}}$ </tex-math></inline-formula> influence states of the parasitic diode <inline-formula> <tex-math notation="LaTeX">${D}_{{0}}$ </tex-math></inline-formula> in the conventional LIGBT region and parasitic diode <inline-formula> <tex-math notation="LaTeX">${D}_{{1}}$ </tex-math></inline-formula> in <inline-formula> <tex-math notation="LaTeX">${R}_{\text {M1}}$ </tex-math></inline-formula> by modulating the potential of <inline-formula> <tex-math notation="LaTeX">${P}^{+}{(}{V}_{\text {P}}{)}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${N}^{+}{(}{V}_{\text {N}}{)}$ </tex-math></inline-formula> near the trench gate. In the ON-state, the adaptive turn-on <inline-formula> <tex-math notation="LaTeX">${D}_{{0}}$ </tex-math></inline-formula> caused by the large <inline-formula> <tex-math notation="LaTeX">${R}_{\text {M1}}$ </tex-math></inline-formula> enhances the conductivity modulation. When <inline-formula> <tex-math notation="LaTeX">${D}_{{1}}$ </tex-math></inline-formula> is triggered at a high anode voltage, <inline-formula> <tex-math notation="LaTeX">${V}_{\text {N}}$ </tex-math></inline-formula> is clamped and the device turns into saturation. The turn-on <inline-formula> <tex-math notation="LaTeX">${D}_{{0}}$ </tex-math></inline-formula> increases the saturation current density of the MR LIGBT to <inline-formula> <tex-math notation="LaTeX">$2.5\times $ </tex-math></inline-formula> of self-adjust conductivity modulation trench (SCMT) LIGBT and reduces the ON-state voltage drop (<inline-formula> <tex-math notation="LaTeX">${V}_{\text {on}}$ </tex-math></inline-formula>) by 49% and 36% compared with conventional (Con.) LIGBT and SCMT LIGBT, respectively. <inline-formula> <tex-math notation="LaTeX">${D}_{{0}}$ </tex-math></inline-formula> adaptively turns off during short-circuit and turn-off periods. Consequently, compared with the Con. and SCMT LIGBTs, the MR LIGBT not only lengthens the short-circuit time (<inline-formula> <tex-math notation="LaTeX">${t}_{\text {SC}}$ </tex-math></inline-formula>) to <inline-formula> <tex-math notation="LaTeX">$24.7~\mu \text{s}$ </tex-math></inline-formula> from 7.12 to <inline-formula> <tex-math notation="LaTeX">$19.8~\mu \text{s}$ </tex-math></inline-formula>, but also decreases <inline-formula> <tex-math notation="LaTeX">${E}_{\text {off}}$ </tex-math></inline-formula> by 74% and 54% at the same <inline-formula> <tex-math notation="LaTeX">${V}_{\text {on}}$ </tex-math></inline-formula>. Owing to the prominent static and dynamitic characteristics, the total power loss of the MR LIGBT is reduced by 28% and 40% at <inline-formula> <tex-math notation="LaTeX">${f} =50$ </tex-math></inline-formula> kHz compared with that of SCMT and Con. LIGBTs.