Evaluation of Electric and Dielectric Properties of Metal–Semiconductor Structures With 2% GC-Doped-(Ca3Co4Ga0.001Ox) Interlayer

Electrical and dielectric properties of Au/n-Si metal–semiconductor structures with high dielectric have been examined by capacitance/conductance–voltage (<inline-formula> <tex-math notation="LaTeX">${C}/{G}$ </tex-math></inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula>) measurements in the frequency range of 5–500 kHz at room temperature. Voltage-dependent profiles of interface states (<inline-formula> <tex-math notation="LaTeX">${N}_{\text {ss}}$ </tex-math></inline-formula>) and resistance (<inline-formula> <tex-math notation="LaTeX">${R}_{i}$ </tex-math></inline-formula>) were extracted from the C and G data using the low–high-frequency capacitance and Nicollian–Brews methods, respectively. The real and imaginary components of the complex dielectric constant (<inline-formula> <tex-math notation="LaTeX">$\varepsilon ^\prime $ </tex-math></inline-formula>, <inline-formula> <tex-math notation="LaTeX">$\varepsilon ^{\prime \prime }$ </tex-math></inline-formula>), electric modulus (<inline-formula> <tex-math notation="LaTeX">${M}^\prime $ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${M}^{\prime \prime }$ </tex-math></inline-formula>), and ac conductivity (<inline-formula> <tex-math notation="LaTeX">$\sigma _{\mathsf {ac}}$ </tex-math></inline-formula>) were calculated from the <inline-formula> <tex-math notation="LaTeX">${C}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${G}$ </tex-math></inline-formula> data. All parameters have a strong relation with frequency and voltage, especially at low frequencies due to Maxwell–Wagner relaxation and <inline-formula> <tex-math notation="LaTeX">${N}_{\mathsf {ss}}$ </tex-math></inline-formula>. The observed peaks in the <inline-formula> <tex-math notation="LaTeX">${N}_{\mathsf {ss}}$ </tex-math></inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${R}_{i}$ </tex-math></inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula> plots can be ascribed by the special distribution of <inline-formula> <tex-math notation="LaTeX">${N}_{\mathsf {ss}}$ </tex-math></inline-formula> at M/S interface. These results confirmed that [2% graphene cobalt-doped (Ca<sub>3</sub>CO<sub>4</sub>Ga<sub>0.001</sub>O<sub><italic>x</italic></sub>)] interlayer has high-dielectric constant and can be used an interlayer instead of the traditional SiO<sub>2</sub> at M/S interface to increase their capacitance or more charges/energy storage and reduce both the values of <inline-formula> <tex-math notation="LaTeX">${N}_{\mathsf {ss}}$ </tex-math></inline-formula> and series resistance (<inline-formula> <tex-math notation="LaTeX">${R}_{s}$ </tex-math></inline-formula>). The values of <inline-formula> <tex-math notation="LaTeX">$\sigma $ </tex-math></inline-formula> are almost constant at lower–intermediate frequencies, but they start to increase at high frequencies that are corresponding to the dc and ac conductivity, respectively.