Miracle-dz/UniFAR-FTUs huggingface dataset:
Periodic Event-Triggered Quantization Policy Design for a Scalar LTI System With i.i.d. Feedback Dropouts

This technical note proposes an event-triggered quantization policy design method to stabilize a scalar continuous-time linear time-invariant (LTI) system, whose feedback loop is closed over an unreliable digital communication network. The feedback packets suffer from network delay and may be dropped in an independent and identically distributed (i.i.d.) way. In order to save quantization bit rate, we implement a periodic event-triggering strategy which periodically samples the state and only quantizes and transmits the sampled state when a predefined event is triggered. By making good use of both the information bits and the sampling time instants of the feedback packets, our policy can obtain the desired mean-square stability at a lower bit rate than the conventional time-triggered quantization policies which utilize only the information bits inside the feedback packets. Under our quantization policy, the stabilizing bit rate condition is up to the dropout rate, the processing and network delays and the unstable eigenvalue of the system, and is independent of the bounded process noise.
The Flooding Attack in Low Power and Lossy Networks: A Case Study

Routing Protocol for Low Power and Lossy Networks (RPL) has been specially designed to support the interconnection between resource-constrained devices. It has been well-known that the RPL is exposed to various internal DoS attacks. One of the most effective attacks seems to be the flooding. This paper assesses the impact that the flooding attack has on the RPL network. This attack is observed to decrease the packet delivery rate, while increasing the end-to-end packet delay. We also investigate the overhearing solution and show that such mechanism can be used as a primary indicator to detect and eliminate the flooding attack from the network.
Investigation on the Self-Sustained Oscillation of Superjunction MOSFET Intrinsic Diode

This paper presents the analyses on the self-sustained oscillation of superjunction MOSFET intrinsic diode. At first, the characteristics of the self-sustained oscillation for the superjunction MOSFET intrinsic diode are identified by the double-pulse switching test. The test results show that the self-sustained oscillation with significant self-amplification phenomenon can be triggered during the reverse recovery transient of superjunction MOSFET intrinsic diode. Based on the Sentaurus TCAD simulation, the self-sustained oscillation is reproduced. The simulation results reveal the root cause of the self-sustained oscillation. Due to the snappy reverse recovery of superjunction MOSFET intrinsic diode, the steep slope of diode snap off current can generate high voltage across the common source inductance, which drives the gate–source voltage and turns on the high-side MOSFET. The unexpected MOSFET turn-on can, in return, enhance the steepness of the current slope when the diode snap off. This leads to a positive feedback process and self-sustained oscillation is generated. In the end, based on the theoretical analyses and experimental results, the necessary methods that can suppress the oscillation are presented.
Effects of Interlamianr Electrical Behavior on Eddy Currents in Carbon Fiber Composite Materials

The purpose of this paper is to thoroughly investigate interlaminar contact resistivity and its influence on eddy current (EC) in carbon fiber reinforced polymer (CFRP) laminates. Contact resistivity between adjacent laminae, together with the anisotropic bulk conductivity of a single-layer lamina, were measured. The measured values were then utilized in finite element (FE) models to study the effect of interlaminar electrical behavior on eddy currents in CFRPs. The numerically simulation results showed that eddy currents are highly concentrated around the interface between angled laminae when contact resistivity is taken into account, while a significant attenuation of the currents occurs in a noncontact model. The numerical results were verified by comparing the calculated voltages with the experimentally measured ones. It was found that the FE results considering contact resistivity are in accordance with experimental ones and will allow a better interfacial modeling of CFRPs.
Wirelessly Operated, Implantable Optoelectronic Probes for Optogenetics in Freely Moving Animals

Recording and interrogating brain activities using optical methods have become emerging technologies in neuroscience. Traditional tools for optogenetic stimulation in the deep brain are mostly based on implantable fibers, imposing constraints on the animal movement. Recently developed microscale light-emitting diodes (micro-LEDs), which can be wirelessly operated, serve as injectable light sources that directly interact with neural systems. Here, we exploit a wirelessly controlled, implantable system for optogenetic studies in behaving animals. Thin-film indium gallium nitride (InGaN)-based blue micro-LEDs transferred onto flexible probes are injected into the animal brain and optically activate channelrhodopsin-2 expressing neurons. A customized circuit module with a battery is employed to modulate the micro-LED, which is remotely controlled at a distance up to 50mvia 2.4-GHz radio frequency communications. The systems are implemented on freely moving mice, and demonstrate optogenetic modulation of locomotive behaviors in vivo. Moreover, independent and synchronous control of multiple animals is accomplished with the communication unit in the design circuit. The proposed system provides the potential for advanced optical neural interfaces and offers solutions to study complicated animal behaviors in neuroscience research.
Scatter Artifacts Removal Using Learning-Based Method for CBCT in IGRT System

Cone-beam-computed tomography (CBCT) has shown enormous potential in recent years, but it is limited by severe scatter artifacts. This paper proposes a scatter-correction algorithm based on a deep convolutional neural network to reduce artifacts for CBCT in an image-guided radiation therapy (IGRT) system. A two-step registration method that is essential in our algorithm is implemented to preprocess data before training. The testing result on real data acquired from the IGRT system demonstrates the ability of our approach to learn artifacts distribution. Furthermore, the proposed method can be applied to enhance the performance on such applications as dose estimation and segmentation.
Insights Into the Impact of Pocket and Source Elevation in Vertical Gate Elevated Source Tunnel FET Structures

In this paper, we investigate a vertical gate-based elevated tunnel source (TS) FET structure with and without a vertical n+ pocket and compare its performance with a lateral p-n-i-n TS (LTS) FET. The lined arrangement of gate not only provides a performance boosting as expected but it further allows the flexibility to minimize the degradations at higher pocket doping using source elevation. The vertical gate and pocket alignment overcome the full-depletion constraint of the LTS FET and maintain a better subthreshold swing (SS) over a higher range of pocket doping and width. An optimized average SS as low as ~26 mV/dec is achieved over five decades of current which is improved by 58% and 67%, respectively, as compared to the LTS and p-i-n tunnel field-effect transistors (TFETs) with an on-current enhancement of one order and <inline-formula> <tex-math notation="LaTeX">$\sim 17\times $ </tex-math></inline-formula>, respectively. Furthermore, the gate-to-drain capacitance (<inline-formula> <tex-math notation="LaTeX">${C} _{\textsf {GD}}$ </tex-math></inline-formula>) in elevated source structures is a highly sensitive function of the pocket doping and can be significantly reduced by tuning the source elevation length <inline-formula> <tex-math notation="LaTeX">${L} _{\textsf {CV}}$ </tex-math></inline-formula> at higher pocket doping. At the same pocket conditions, a one order reduction in <inline-formula> <tex-math notation="LaTeX">${C} _{\textsf {GD}}$ </tex-math></inline-formula> is achieved with respect to the lateral configuration without compromising the intrinsic delay (<inline-formula> <tex-math notation="LaTeX">${C} _{\textsf {GD}}\times {V} _{\textsf {DD}}/{I} _{\textsf {ON}})$ </tex-math></inline-formula>. The circuit-level investigations show that due to the, otherwise, higher <inline-formula> <tex-math notation="LaTeX">${C} _{\textsf {GD}}$ </tex-math></inline-formula> in the LTS FET, the switching delay remains unaffected by the on-current boosting caused by higher pocket doping. However, it is drastically improved by ~23% in elevated source structures at a change from <inline-formula> <tex-math notation="LaTeX">$4\times 10^{\textsf {19}}$ </tex-math></inline-formula> to <inline-formula> <tex-math notation="LaTeX">$5\times 10^{\textsf {19}}$ </tex-math></inline-formula>/cm<sup>3</sup>. A faster switching delay (<inline-formula> <tex-math notation="LaTeX">$\tau _{\textsf {p}}$ </tex-math></inline-formula>) of ~116 ps is achieved at a ~33% reduced device base area.
Drivers for sub-hourly scheduling in unit commitment models

Growing shares of wind and solar power increase the sub-hourly variability of the net load, leading to higher and more frequent ramping. Sub-hourly unit commitment and economic dispatch modelling may be beneficial in certain regions given that it may capture the increase in short-term ramping requirements. However, sub-hourly scheduling comes at a computational cost. This paper questions the extent to which sub-hourly modelling may be of benefit for regions of different size and and different make-up and dispersion of renewable energy resources. Moreover, the individual impact that wind and solar power may have on sub-hourly net-load ramping is assessed in order to determine whether high-resolution modelling is of equal value in high-wind and high-solar power scenarios. It was found that the short-term net-load variability captured by sub-hourly modelling depends on the geographic dispersion of wind and solar resources, the size of the power system and the make-up of its renewable energy portfolio, and therefore, so may the benefits obtained from sub-hourly modelling for a given power system.
An Integrated Multi-Criteria Decision Making Approach to Location Planning of Electric Vehicle Charging Stations

Electric vehicles (EVs) are recognized as one of the most promising technologies worldwide to address the fossil fuel energy resource crisis and environmental pollution. As the initial work of EV charging station (EVCS) construction, site selection plays a vital role in its whole life cycle, which, however, is a complicated multiple criteria decision making (MCDM) problem involving many conflicting criteria. Therefore, this work aims to propose a novel integrated MCDM approach by a grey decision making trial and evaluation laboratory (DEMATEL) and uncertain linguistic multi-objective optimization by ratio analysis plus full multiplicative form (UL-MULTIMOORA) for determining the most suitable EVCS site in terms of multiple interrelated criteria. Specifically, the grey DEMATEL method is used to determine criteria weights and the UL-MULTIMOORA model is employed to evaluate and select the optimal site. Finally, an empirical example in Shanghai, China, is presented to demonstrate the applicability and effectiveness of the proposed approach. The results show that the proposed approach is a useful, practical, and effective way to find the optimal location of EVCSs.
Exact Diffusion for Distributed Optimization and Learning—Part II: Convergence Analysis

Part I of this paper developed the exact diffusion algorithm to remove the bias that is characteristic of distributed solutions for deterministic optimization problems. The algorithm was shown to be applicable to the larger set of locally balanced left-stochastic combination policies than the set of doubly-stochastic policies. These balanced policies endow the algorithm with faster convergence rate, more flexible step-size choices and better privacy-preserving properties. In this Part II, we examine the convergence and stability properties of exact diffusion in some detail and establish its linear convergence rate. We also show that it has a wider stability range than the EXTRA consensus solution, meaning that it is stable for a wider range of step-sizes and can, therefore, attain faster convergence rates. Analytical examples and numerical simulations illustrate the theoretical findings.
Prediction of Alpha Particle Effect on 5-nm Vertical Field-Effect Transistors

The radiation effect on a nanoplate vertical field-effect transistor (VFET) was analyzed in a 5-nm technology node by simulating alpha particle-based 3-D TCAD, and it was compared to the effect on a FinFET on 5-nm technology node. Due to structural differences between FinFET and VFET, a change in the drain current over time is different after the injection of particles. In addition, there are two sections where the radiation effect decreases and increases depending on the particle energy. As the particle energy increases, the region where the peak value of the electron–hole pair (EHP) is generated is gradually moving away from the drain region and the amount of EHP generation in the p-n junction region decreases. In addition, as the temperature increases, the radiation effect decreases due to the reduced mobility and increased recombination rate. VFETs are more vulnerable to radiation because they have a larger drain area than FinFETs, which can reduce the radiation effect in half by using the drain top structures in VFETs.
From PERC to Tandem: POLO- and p+/n+ Poly-Si Tunneling Junction as Interface Between Bottom and Top Cell

We present a novel cell concept that combines the tandem cell approach with the passivated emitter and rear cells (PERC) mainstream technology. As an interface between Si bottom and top cell, we utilize passivating n<sup>+</sup>-type polysilicon on oxide (POLO) contacts and a p<sup>+</sup> poly-Si/n<sup>+</sup> poly-Si tunneling junction. Our full area PERC+ Si bottom cells are fabricated within a typical industrial process sequence where the POCl<sub>3</sub> diffusion and SiN<sub>x</sub> deposition are replaced by the POLO junction formation processes. The implied open-circuit voltage i<italic>V</italic><sub>oc</sub> that is measured on these devices reaches up to 708 mV (684 mV) under 1 sun (under filtered spectrum to simulated top cell absorption). On sister cells with planar front side, the respective i<italic>V</italic><sub>oc</sub> values are 718 mV (696 mV). In order to understand the device physics of our ultra-abrupt p<sup>+</sup> poly-Si/n<sup>+</sup> poly-Si tunneling junction, we determined the carrier lifetime in the poly-Si by time-resolved photoluminescence. The extracted lifetimes of 42–54 ps enter as input parameter for numerical Sentaurus Device simulations. These simulations reveal the importance of band-to-band and trap-assisted tunneling for a low tunneling junction resistivity of 2.95 mΩ·cm<sup>2</sup>. Experimentally, an upper limit for the combined junction resistance of the p<sup>+</sup> poly-Si/n<sup>+</sup> poly-Si/SiO<sub>x</sub> stack of 100 mΩ·cm<sup>2</sup> is determined.
Low-Cost 3D-Printed PLA-COC Micro Hydrodynamic Focused Device

3D-printing has recently attracted the interest of researchers in microfluidics. This technology has proved its potential as a way of fabricating microchannels offering an automated, low-cost, and straight-forward approach compared with the laborious soft-lithography method. 3D-printing enables rapid prototyping. Microfluidic devices can be produced using Fused Deposition Modeling (FDM), with channels width in the order of hundreds of micrometers. These devices can be used for testing new topologies, geometries, and concepts, before investing in others costlier methods. The study of the flow inside microfluidic devices requires optical access to microchannels. Unfortunately, even transparent materials such as Poly Lactic Acid (PLA) produce translucent 3D prints, that are not optically transparent, because of the layering process in 3D-printing. In this work, we propose a way of creating an optical window by using an open channel approach delimited by Cyclic Olefin Copolymer (COC). This approach enabled us to monitor liquid flow inside the device using biocompatible materials.
A Factorial Hidden Markov Model for Energy Disaggregation based on Human Behavior Analysis

With the widely installed smart meters and improved data collection technology, nonintrusive load monitoring (NILM) has attracted extensive attention in research. Among different methods, hidden Markov models (HMM) has proved to be one powerful tool in energy disaggregation. A variety of extended HMM methods has been developed attempting to achieve a better performance. However, HMMs inherently assume a uniform prior distribution over the transition probabilities, which is usually not the case in practice. Also, when similar emission possibilities are shared by different devices, appliances with cyclic power consumption patterns will dominate the non-cyclic appliance due to higher state transition possibilities. In this paper, a novel human behavior analysis based factorial hidden Markov Model (HBA-FHMM) supervised learning algorithm is developed which borrows the connections between human behavior and appliance usage to optimize its performance. Testing result based on the real data demonstrates its effectiveness in addressing the mentioned challenges.
Design of Programmable Analog Calculation Unit by Implementing Support Vector Regression for Approximate Computing

In this work, we design a programmable analog calculation unit (ACU) for approximately computing arbitrary functions with two operands. By implementing an efficient scheme of support vector regression, the target functions are retrieved by very large scale integrated circuits in one clock cycle with only 600 transistors. A set of dynamically tunable analog circuits are designed for generating various features of Gaussian kernel functions. By mixing these kernel functions, any specific complex function is computed by the regression. The ACU is designed and simulated in a standard CMOS technology for proof-of-concept. From the circuit simulation results, the proposed ACU calculates all the target functions with the average error less than 1.7%. The performances over energy, flexibility, and hardware efficiency of the proposed ACU are superior to a basic four-bit digital arithmetic logic unit and look-up table based architectures. The robustness against temperature and process variations is also presented with acceptable fluctuations on calculating results. To conveniently integrate the proposed ACUs into ordinary digital systems, we also design the compact memory circuits, which offer dual-mode (analog and binary) data storage/access.
Design and Analysis of a High-Order Mode Ladder-Type RF Circuit for Stable Operation in a  ${W}$ -Band Extended Interaction Oscillator

A stable high-order mode version of a ladder-type RF circuit (ladder cavity) is proposed to overcome the frequency limits of the commonly used fundamental mode counterpart for the development of millimeter-wave and higher frequency extended interaction oscillators (EIOs). The specific design for the stable operated circuit and its analysis based on the mode characteristic is carried out. The study of the transverse mode shows the potential of the TM31 mode in establishing more sufficient axial electric field than the fundamental TM11 version in a large size cavity. To enable the TM31 mode to overwhelm other possible competing modes in the circuit impedance, the field distribution of the TM31 mode is optimized in design through the analysis of transverse parameters. Key features that ensure stable operation are: 1) the large mode separation and nonoverlapping oscillation regions embodied in beam-loading conductance between related modes due to the specific design and 2) the large difference in the start-oscillation currents of the TM31 and TM11 modes based on the theoretical analysis. To demonstrate the circuit capability, a $W$ -band EIO with the proposed circuit has been designed. Simulations with a 3-D particle-in-cell code in CHIPIC predict a maximum output power over 10.6 kW around 93.1 GHz was obtained with a 20.5-kV and 8-A electron beam. The design provides a promising approach for making a stable high-order mode RF circuit applied in high-frequency EIOs.
Adaptive Control for UAV Close Formation Flight against Disturbances

In fixed-wing UAV close formation flight adopting the leader-follower configuration, the follower dynamics is affected by the leader-induced trailing vortex effect. This paper considers the trailing vortex effect as external disturbances, and proposes an adaptive control scheme for the follower in order to counteract the trailing vortex effect and achieve accurate formation stabilization control in the horizontal plane. Equations of the relative motion between the leader and the follower considering the trailing vortex effect are derived. Then, an adaptive control law for the follower is designed based on the relative motion model, and adaptation laws are proposed to estimate the trailing vortex disturbances. It is proved via Lyapunov theory that both the lateral and the forward distance errors of the relative motion converge to zero. The effectiveness and robustness of the proposed control scheme are verified through numerical simulations under trailing vortex disturbances.
Chemical Stability and Performance of Doped Silicon Oxide Layers for Use in Thin-Film Silicon Solar Cells

Doped hydrogenated silicon oxide layers (SiO<italic><sub>X</sub></italic>:H) have recently been successfully integrated as front window layers, back reflector layers, intermediate reflector layers, passivation layers, and junction layers in thin-film silicon solar cells. Depending on the deposition conditions of the SiO<italic><sub>X</sub></italic>:H layers, some devices suffer from a degradation in performance in time. In this paper, we demonstrate the responsible mechanism involved. It is demonstrated that oxidation of the p-type doped (p-)SiO<italic><sub>X</sub></italic>:H with a high crystallinity and, therefore, poor passivation of crystalline grains is responsible for this degradation. The oxidation of p-SiO<italic><sub>X</sub></italic>:H is caused by the in-diffusion of water vapor from the ambient air. Stable p-SiO<italic><sub>X</sub></italic>:H can be obtained if the material is processed at higher pressure. In addition, the degradation can be prevented if the cell is well encapsulated, like using dense n-type (n-)SiO<italic><sub>X</sub></italic>:H in the back reflector of the cell.
PV Power Characteristic Modeling based on Multi-scale Clustering and Its Application in Generation Prediction

The modeling and prediction of stochastic photovoltaic (PV) power curve is a widely concerned issue in power grid operation and planning. Mining and utilization of the big data recorded by the PV stations provide a new method for the modeling of the fluctuating PV power. This paper presents a multi-scale analysis scheme to explore and model both the inherent and the stochastic characteristics of the PV power time sequence. The proposed scheme consists of the multiple clustering analysis at the large time-scale data, the standardized transformations on the small time-scale data, together with the probability distribution modeling. The clustering results are cross validated with the theoretical models from the Meteorology field, and the effectiveness of the proposed methods is verified through an example of day-ahead PV power forecast.