human: Given a node-centered hypergraph: <hypergraph>, where nodes represent papers and hyperedges represent sets of papers co-cited by a source paper.

Details of the hypergraph:
Center node: "experimental characterization optimization and recovery of data retention errors in mlc nand flash memory"
  Abstract: This paper summarizes our work on experimentally characterizing, mitigating, and recovering data retention errors in multi-level cell (MLC) NAND flash memory, which was published in HPCA 2015, and examines the work's significance and future potential. Retention errors, caused by charge leakage over time, are the dominant source of flash memory errors. Understanding, characterizing, and reducing retention errors can significantly improve NAND flash memory reliability and endurance. In this work, we first characterize, with real 2Y-nm MLC NAND flash chips, how the threshold voltage distribution of flash memory changes with different retention ages -- the length of time since a flash cell was programmed. We observe from our characterization results that 1) the optimal read reference voltage of a flash cell, using which the data can be read with the lowest raw bit error rate (RBER), systematically changes with its retention age, and 2) different regions of flash memory can have different retention ages, and hence different optimal read reference voltages. #R##N#Based on our findings, we propose two new techniques. First, Retention Optimized Reading (ROR) adaptively learns and applies the optimal read reference voltage for each flash memory block online. The key idea of ROR is to periodically learn a tight upper bound of the optimal read reference voltage, and from there approach the optimal read reference voltage. Our evaluations show that ROR can extend flash memory lifetime by 64% and reduce average error correction latency by 10.1%. Second, Retention Failure Recovery (RFR) recovers data with uncorrectable errors offline by identifying and probabilistically correcting flash cells with retention errors. Our evaluation shows that RFR essentially doubles the error correction capability.

Question: Please tell me which class the center node belongs to. The 40 classes are: cs.NA(Numerical Analysis), cs.MM(Multimedia), cs.LO(Logic in Computer Science), cs.CY(Computers and Society), cs.CR(Cryptography and Security), cs.DC(Distributed, Parallel, and Cluster Computing), cs.HC(Human-Computer Interaction), cs.CE(Computational Engineering, Finance, and Science), cs.NI(Networking and Internet Architecture), cs.CC(Computational Complexity), cs.AI(Artificial Intelligence), cs.MA(Multiagent Systems), cs.GL(General Literature), cs.NE(Neural and Evolutionary Computing), cs.SC(Symbolic Computation), cs.AR(Hardware Architecture), cs.CV(Computer Vision and Pattern Recognition), cs.GR(Graphics), cs.ET(Emerging Technologies), cs.SY(Systems and Control), cs.CG(Computational Geometry), cs.OH(Other Computer Science), cs.PL(Programming Languages), cs.SE(Software Engineering), cs.LG(Machine Learning), cs.SD(Sound), cs.SI(Social and Information Networks), cs.RO(Robotics), cs.IT(Information Theory), cs.PF(Performance), cs.CL(Computation and Language), cs.IR(Information Retrieval), cs.MS(Mathematical Software), cs.FL(Formal Languages and Automata Theory), cs.DS(Data Structures and Algorithms), cs.OS(Operating Systems), cs.GT(Computer Science and Game Theory), cs.DB(Databases), cs.DL(Digital Libraries), cs.DM(Discrete Mathematics). Directly output the class name.

gpt: cs.AR(Hardware Architecture)