human: Given a node-centered hypergraph: <hypergraph>, where nodes represent papers and hyperedges represent sets of papers co-cited by a source paper.

Details of the hypergraph:
Center node: "adaptive latency dram reducing dram latency by exploiting timing margins"
  Abstract: This paper summarizes the idea of Adaptive-Latency DRAM (AL-DRAM), which was published in HPCA 2015, and examines the work's significance and future potential. AL-DRAM is a mechanism that optimizes DRAM latency based on the DRAM module and the operating temperature, by exploiting the extra margin that is built into the DRAM timing parameters. DRAM manufacturers provide a large margin for the timing parameters as a provision against two worst-case scenarios. First, due to process variation, some outlier DRAM chips are much slower than others. Second, chips become slower at higher temperatures. The timing parameter margin ensures that the slow outlier chips operate reliably at the worst-case temperature, and hence leads to a high access latency. #R##N#Using an FPGA-based DRAM testing platform, our work first characterizes the extra margin for 115 DRAM modules from three major manufacturers. The experimental results demonstrate that it is possible to reduce four of the most critical timing parameters by a minimum/maximum of 17.3%/54.8% at 55C while maintaining reliable operation. AL-DRAM uses these observations to adaptively select reliable DRAM timing parameters for each DRAM module based on the module's current operating conditions. AL-DRAM does not require any changes to the DRAM chip or its interface; it only requires multiple different timing parameters to be specified and supported by the memory controller. Our real system evaluations show that AL-DRAM improves the performance of memory-intensive workloads by an average of 14% without introducing any errors. Our characterization and proposed techniques have inspired several other works on analyzing and/or exploiting different sources of latency and performance variation within DRAM chips.

Connected through hyperedge HE-1 (induced by source paper "flexible latency dram understanding and exploiting latency variation in modern dram chips"):
  with members:
    - "errors in flash memory based solid state drives analysis mitigation and recovery"
    - "error characterization mitigation and recovery in flash memory based solid state drives"
    - "understanding and improving the latency of dram based memory systems"
    - "reducing dram latency at low cost by exploiting heterogeneity"
    - "improving dram performance by parallelizing refreshes with accesses"

Question: Please tell me which class the center node belongs to. The 40 classes are: cs.NA(Numerical Analysis), cs.MM(Multimedia), cs.LO(Logic in Computer Science), cs.CY(Computers and Society), cs.CR(Cryptography and Security), cs.DC(Distributed, Parallel, and Cluster Computing), cs.HC(Human-Computer Interaction), cs.CE(Computational Engineering, Finance, and Science), cs.NI(Networking and Internet Architecture), cs.CC(Computational Complexity), cs.AI(Artificial Intelligence), cs.MA(Multiagent Systems), cs.GL(General Literature), cs.NE(Neural and Evolutionary Computing), cs.SC(Symbolic Computation), cs.AR(Hardware Architecture), cs.CV(Computer Vision and Pattern Recognition), cs.GR(Graphics), cs.ET(Emerging Technologies), cs.SY(Systems and Control), cs.CG(Computational Geometry), cs.OH(Other Computer Science), cs.PL(Programming Languages), cs.SE(Software Engineering), cs.LG(Machine Learning), cs.SD(Sound), cs.SI(Social and Information Networks), cs.RO(Robotics), cs.IT(Information Theory), cs.PF(Performance), cs.CL(Computation and Language), cs.IR(Information Retrieval), cs.MS(Mathematical Software), cs.FL(Formal Languages and Automata Theory), cs.DS(Data Structures and Algorithms), cs.OS(Operating Systems), cs.GT(Computer Science and Game Theory), cs.DB(Databases), cs.DL(Digital Libraries), cs.DM(Discrete Mathematics). Directly output the class name.

gpt: cs.AR(Hardware Architecture)