Single-Crystal 4H/3C-SiC Engineered Substrate: A Novel Platform Enabling High-Performance Low-Voltage SiC Devices
Year: 2025
Type: article
Topic: Silicon Carbide Semiconductor Technologies
Authors and affiliations:
raw_author_name: Xiangjie Xing
raw_affiliation_strings: Chinese Academy of Science,HF&#x0026;HV Device and Integrate Center, Institute of Microelectronics,Beijing,China
raw_author_name: Yidan Tang
raw_affiliation_strings: Chinese Academy of Science,HF&#x0026;HV Device and Integrate Center, Institute of Microelectronics,Beijing,China
raw_author_name: Xin Yang
raw_affiliation_strings: University of Hong Kong,Department of Electrical and Electronic Engineering,China
raw_author_name: Zhen Dong
raw_affiliation_strings: Chinese Academy of Science,HF&#x0026;HV Device and Integrate Center, Institute of Microelectronics,Beijing,China
raw_author_name: Zheng Hu
raw_affiliation_strings: Chinese Academy of Science,HF&#x0026;HV Device and Integrate Center, Institute of Microelectronics,Beijing,China
raw_author_name: Zineng Yang
raw_affiliation_strings: University of Hong Kong,Department of Electrical and Electronic Engineering,China
raw_author_name: Hehe Gong
raw_affiliation_strings: University of Hong Kong,Department of Electrical and Electronic Engineering,China
raw_author_name: Fuchao Liu
raw_affiliation_strings: TJ Innovative Semiconductor Substrate Technology Co., Ltd.,Tianjin,China
raw_author_name: Huaping Song
raw_affiliation_strings: PowerEpi Semiconductor Co., Ltd.,Dongguan,China
raw_author_name: Xinglin Xiao
raw_affiliation_strings: Wuhan University,Institute of Technological Sciences,Wuhan
raw_author_name: Jinan Shi
raw_affiliation_strings: University of Chinese Academy of Sciences,China
raw_author_name: Yipei Lei
raw_affiliation_strings: Chinese Academy of Science,HF&#x0026;HV Device and Integrate Center, Institute of Microelectronics,Beijing,China
raw_author_name: Yongqiang Zhang
raw_affiliation_strings: Chinese Academy of Science,HF&#x0026;HV Device and Integrate Center, Institute of Microelectronics,Beijing,China
University of Hong Kong,Department of Electrical and Electronic Engineering,China
raw_author_name: Yifei Feng
raw_affiliation_strings: Chinese Academy of Science,HF&#x0026;HV Device and Integrate Center, Institute of Microelectronics,Beijing,China
raw_author_name: Wu Zhou
raw_affiliation_strings: University of Chinese Academy of Sciences,China
raw_author_name: Xinhua Wang
raw_affiliation_strings: Chinese Academy of Science,HF&#x0026;HV Device and Integrate Center, Institute of Microelectronics,Beijing,China
raw_author_name: Chao Yuan
raw_affiliation_strings: Wuhan University,Institute of Technological Sciences,Wuhan
raw_author_name: Fengwen Mu
raw_affiliation_strings: TJ Innovative Semiconductor Substrate Technology Co., Ltd.,Tianjin,China
raw_author_name: Yuhao Zhang
raw_affiliation_strings: Chinese Academy of Science,HF&#x0026;HV Device and Integrate Center, Institute of Microelectronics,Beijing,China
University of Hong Kong,Department of Electrical and Electronic Engineering,China
raw_author_name: Xiaolong Chen
raw_affiliation_strings: Chinese Academy of Science,Institute of Physics,Beijing,China
raw_author_name: Xinyu Liu
raw_affiliation_strings: Chinese Academy of Science,HF&#x0026;HV Device and Integrate Center, Institute of Microelectronics,Beijing,China
raw_author_name: Sheng Liu
raw_affiliation_strings: Wuhan University,Institute of Technological Sciences,Wuhan
raw_author_name: Yue Hao
raw_affiliation_strings: Xidian University,Xi&#x2019;an,China