Low Thermal Resistance X-band AlGaN/GaN/AlN-on-SiC RF Power HEMTs with Record P <sub>out</sub> = 41 W/mm and f <sub>T</sub> ×BV = 31 THz•V
Year: 2025
Type: article
Topic: GaN-based semiconductor devices and materials
Authors and affiliations:
raw_author_name: Hong Zhou
raw_affiliation_strings: Xidian University,Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics and Guangzhou Institute of Technology,Xi&#x2019;an,China,710071
raw_author_name: Kun Zhang
raw_affiliation_strings: Xidian University,Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics and Guangzhou Institute of Technology,Xi&#x2019;an,China,710071
raw_author_name: Chaoqun Zhang
raw_affiliation_strings: Xidian University,Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics and Guangzhou Institute of Technology,Xi&#x2019;an,China,710071
raw_author_name: Qifeng Lyu
raw_affiliation_strings: Dynax Semiconductor Inc.,Suzhou,China,215300
raw_author_name: Hui Zhang
raw_affiliation_strings: Dynax Semiconductor Inc.,Suzhou,China,215300
raw_author_name: Naiqian Zhang
raw_affiliation_strings: Dynax Semiconductor Inc.,Suzhou,China,215300
raw_author_name: Peng Dong
raw_affiliation_strings: Chengdu Aerospace Bomu Electronic Science and Technology Co., Ltd,Chengdu,China,610036
raw_author_name: Jia Cao
raw_affiliation_strings: Chengdu Aerospace Bomu Electronic Science and Technology Co., Ltd,Chengdu,China,610036
raw_author_name: Yali Mao
raw_affiliation_strings: Wuhan University,The Institute of Technological Sciences,Wuhan,China,430072
raw_author_name: Hehe Gong
raw_affiliation_strings: University of Hong Kong,Department of Electronic and Electrical Engineering,Hong Kong,China
raw_author_name: Zhihong Liu
raw_affiliation_strings: Xidian University,Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics and Guangzhou Institute of Technology,Xi&#x2019;an,China,710071
raw_author_name: Chao Yuan
raw_affiliation_strings: Wuhan University,The Institute of Technological Sciences,Wuhan,China,430072
raw_author_name: Yachao Zhang
raw_affiliation_strings: University of Hong Kong,Department of Electronic and Electrical Engineering,Hong Kong,China
Xidian University,Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics and Guangzhou Institute of Technology,Xi&#x2019;an,China,710071
raw_author_name: Yi Pei
raw_affiliation_strings: Dynax Semiconductor Inc.,Suzhou,China,215300
raw_author_name: Yuhao Zhang
raw_affiliation_strings: University of Hong Kong,Department of Electronic and Electrical Engineering,Hong Kong,China
Xidian University,Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics and Guangzhou Institute of Technology,Xi&#x2019;an,China,710071
raw_author_name: Yue Hao
raw_affiliation_strings: Xidian University,Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics and Guangzhou Institute of Technology,Xi&#x2019;an,China,710071
raw_author_name: Jincheng Zhang
raw_affiliation_strings: Xidian University,Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics and Guangzhou Institute of Technology,Xi&#x2019;an,China,710071