Gate-First/Channel-Last Process for High-Performance a-IGZO Gate-All-Around Nanosheet FETs
Year: 2025
Type: article
Topic: Semiconductor materials and devices
Authors and affiliations:
raw_author_name: Shipeng Wang
raw_affiliation_strings: Chinese Academy of Sciences, State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Beijing, China
raw_author_name: Chuanke Chen
raw_affiliation_strings: Chinese Academy of Sciences, State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Beijing, China
raw_author_name: Congyan Lu
raw_affiliation_strings: Chinese Academy of Sciences, State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Beijing, China
raw_author_name: Chen Gu
raw_affiliation_strings: Chinese Academy of Sciences, State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Beijing, China
raw_author_name: Kaiping Zhang
raw_affiliation_strings: Chinese Academy of Sciences, State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Beijing, China
raw_author_name: Jiebin Niu
raw_affiliation_strings: Chinese Academy of Sciences, State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Beijing, China
raw_author_name: Yu Liu
raw_affiliation_strings: Chinese Academy of Sciences, State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Beijing, China
raw_author_name: Shengjie Zhao
raw_affiliation_strings: Chinese Academy of Sciences, State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Beijing, China
raw_author_name: Wenfeng Jiang
raw_affiliation_strings: Chinese Academy of Sciences, State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Beijing, China
raw_author_name: Qingding Tong
raw_affiliation_strings: Chinese Academy of Sciences, State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Beijing, China
raw_author_name: Yinzhi Tang
raw_affiliation_strings: Chinese Academy of Sciences, State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Beijing, China
raw_author_name: Jiahui Wu
raw_affiliation_strings: Chinese Academy of Sciences, State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Beijing, China
raw_author_name: Mengwen Yan
raw_affiliation_strings: Chinese Academy of Sciences, State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Beijing, China
raw_author_name: Ziheng Bai
raw_affiliation_strings: Chinese Academy of Sciences, State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Beijing, China
raw_author_name: Nianduan Lu
raw_affiliation_strings: Chinese Academy of Sciences, State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Beijing, China
raw_author_name: Weiwei Li
raw_affiliation_strings: Chinese Academy of Sciences, State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Beijing, China
raw_author_name: Di Geng
raw_affiliation_strings: Chinese Academy of Sciences, State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Beijing, China
raw_author_name: Ling Li
raw_affiliation_strings: Chinese Academy of Sciences, State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Beijing, China