Transition metal oxide-based heterostructure memristors for nonvolatile ternary resistive switching realization
Year: 2025
Type: article
Language: en
Topic: Advanced Memory and Neural Computing
Authors and affiliations:
raw_author_name: Yuanyuan Zhu
raw_affiliation_strings: School of Physics and Information Science, Shaanxi University of Science and Technology 1 , Xi'an 710021,
School of Physics and Information Science, Shaanxi University of Science and Technology, Xi'an 710021, China
raw_author_name: Yunfei Zhang
raw_affiliation_strings: School of Physics and Information Science, Shaanxi University of Science and Technology 1 , Xi'an 710021,
School of Physics and Information Science, Shaanxi University of Science and Technology, Xi'an 710021, China
raw_author_name: Xin Wang
raw_affiliation_strings: School of Physics and Information Science, Shaanxi University of Science and Technology 1 , Xi'an 710021,
School of Physics and Information Science, Shaanxi University of Science and Technology, Xi'an 710021, China
raw_author_name: Miao Zhang
raw_affiliation_strings: School of Physics and Information Science, Shaanxi University of Science and Technology 1 , Xi'an 710021,
School of Physics and Information Science, Shaanxi University of Science and Technology, Xi'an 710021, China
raw_author_name: Zicong Guo
raw_affiliation_strings: School of Physics and Technology, Wuhan University 2 , Wuhan 430072,
School of Physics and Technology, Wuhan University, Wuhan 430072, China
raw_author_name: Daobin Luo
raw_affiliation_strings: School of Physics and Information Science, Shaanxi University of Science and Technology 1 , Xi'an 710021,
School of Physics and Information Science, Shaanxi University of Science and Technology, Xi'an 710021, China
raw_author_name: Youqing Wang
raw_affiliation_strings: School of Physics and Information Science, Shaanxi University of Science and Technology 1 , Xi'an 710021,
School of Physics and Information Science, Shaanxi University of Science and Technology, Xi'an 710021, China
raw_author_name: Hongbing Lu
raw_affiliation_strings: School of Physics and Information Technology, Shaanxi Normal University 3 , Xi'an 710062,
School of Physics and Information Technology, Shaanxi Normal University, Xi'an 710062, China
raw_author_name: Rui Xiong
raw_affiliation_strings: School of Physics and Technology, Wuhan University 2 , Wuhan 430072,
School of Physics and Technology, Wuhan University, Wuhan 430072, China
raw_author_name: Shuo Liu
raw_affiliation_strings: Key Laboratory of Flexible Optoelectronic Materials and Technology, Ministry of Education, and School of Optoelectronic Materials and Technology, Jianghan University 4 , Wuhan 430056,
Key Laboratory of Flexible Optoelectronic Materials and Technology, Ministry of Education, and School of Optoelectronic Materials and Technology, Jianghan University, Wuhan 430056, People's Republic of China
raw_author_name: Yong Liu
raw_affiliation_strings: School of Physics and Technology, Wuhan University 2 , Wuhan 430072,
School of Physics and Technology, Wuhan University, Wuhan 430072, China
raw_author_name: Hongjun Wang
raw_affiliation_strings: School of Physics and Information Science, Shaanxi University of Science and Technology 1 , Xi'an 710021,
School of Physics and Information Science, Shaanxi University of Science and Technology, Xi'an 710021, China