A Wide-Frequency-Range GaN Half-Bridge Driver With Reconfigurable High-Voltage Charge Sharing Path
Year: 2025
Type: article
Topic: Electromagnetic Compatibility and Noise Suppression
Authors and affiliations:
raw_author_name: Qihuai Lu
raw_affiliation_strings: Shaanxi Provincial Key Laboratory of Electronic Devices and Advanced Chips, Xi&#x2019;an Key Laboratory of Micro-Nano Electronics and System Integration, and School of Microelectronic, Xi&#x2019;an Jiaotong University, Xi&#x2019;an, China
Shaanxi Provincial Key Laboratory of Electronic Devices and Advanced Chips, Xi&#x0027;an Key Laboratory of Micro-Nano Electronics and System Integration, and School of Microelectronic, Xi&#x0027;an Jiaotong University, Xi&#x0027;an, China
raw_author_name: Guojia Mu
raw_affiliation_strings: Shaanxi Provincial Key Laboratory of Electronic Devices and Advanced Chips, Xi&#x2019;an Key Laboratory of Micro-Nano Electronics and System Integration, and School of Microelectronic, Xi&#x2019;an Jiaotong University, Xi&#x2019;an, China
Shaanxi Provincial Key Laboratory of Electronic Devices and Advanced Chips, Xi&#x0027;an Key Laboratory of Micro-Nano Electronics and System Integration, and School of Microelectronic, Xi&#x0027;an Jiaotong University, Xi&#x0027;an, China
raw_author_name: Xihao Liu
raw_affiliation_strings: Shaanxi Provincial Key Laboratory of Electronic Devices and Advanced Chips, Xi&#x2019;an Key Laboratory of Micro-Nano Electronics and System Integration, and School of Microelectronic, Xi&#x2019;an Jiaotong University, Xi&#x2019;an, China
Shaanxi Provincial Key Laboratory of Electronic Devices and Advanced Chips, Xi&#x0027;an Key Laboratory of Micro-Nano Electronics and System Integration, and School of Microelectronic, Xi&#x0027;an Jiaotong University, Xi&#x0027;an, China
raw_author_name: Wenxing Cao
raw_affiliation_strings: Shaanxi Provincial Key Laboratory of Electronic Devices and Advanced Chips, Xi&#x2019;an Key Laboratory of Micro-Nano Electronics and System Integration, and School of Microelectronic, Xi&#x2019;an Jiaotong University, Xi&#x2019;an, China
Shaanxi Provincial Key Laboratory of Electronic Devices and Advanced Chips, Xi&#x0027;an Key Laboratory of Micro-Nano Electronics and System Integration, and School of Microelectronic, Xi&#x0027;an Jiaotong University, Xi&#x0027;an, China
raw_author_name: Zhuoqi Guo
raw_affiliation_strings: Shaanxi Provincial Key Laboratory of Electronic Devices and Advanced Chips, Xi&#x2019;an Key Laboratory of Micro-Nano Electronics and System Integration, and School of Microelectronic, Xi&#x2019;an Jiaotong University, Xi&#x2019;an, China
Shaanxi Provincial Key Laboratory of Electronic Devices and Advanced Chips, Xi&#x0027;an Key Laboratory of Micro-Nano Electronics and System Integration, and School of Microelectronic, Xi&#x0027;an Jiaotong University, Xi&#x0027;an, China
raw_author_name: Zhongming Xue
raw_affiliation_strings: Shaanxi Provincial Key Laboratory of Electronic Devices and Advanced Chips, Xi&#x2019;an Key Laboratory of Micro-Nano Electronics and System Integration, and School of Microelectronic, Xi&#x2019;an Jiaotong University, Xi&#x2019;an, China
Shaanxi Provincial Key Laboratory of Electronic Devices and Advanced Chips, Xi&#x0027;an Key Laboratory of Micro-Nano Electronics and System Integration, and School of Microelectronic, Xi&#x0027;an Jiaotong University, Xi&#x0027;an, China
raw_author_name: Li Geng
raw_affiliation_strings: Shaanxi Provincial Key Laboratory of Electronic Devices and Advanced Chips, Xi&#x2019;an Key Laboratory of Micro-Nano Electronics and System Integration, and School of Microelectronic, Xi&#x2019;an Jiaotong University, Xi&#x2019;an, China
Shaanxi Provincial Key Laboratory of Electronic Devices and Advanced Chips, Xi&#x0027;an Key Laboratory of Micro-Nano Electronics and System Integration, and School of Microelectronic, Xi&#x0027;an Jiaotong University, Xi&#x0027;an, China