Inverted red quantum dot light-emitting diodes with a dual-layer ZnO electron transport layer
Year: 2025
Type: article
Language: en
Topic: Quantum Dots Synthesis And Properties
Authors and affiliations:
raw_author_name: Depeng Li
raw_affiliation_strings: Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, and Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, Southern University of Science and Technology, Shenzhen 518055, China
raw_author_name: Jingrui Ma
raw_affiliation_strings: Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, and Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, Southern University of Science and Technology, Shenzhen 518055, China
raw_author_name: Xiangwei Qu
raw_affiliation_strings: Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, and Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, Southern University of Science and Technology, Shenzhen 518055, China
raw_author_name: Lei Jin
raw_affiliation_strings: Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, and Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, Southern University of Science and Technology, Shenzhen 518055, China
raw_author_name: Kai Wang
raw_affiliation_strings: Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, and Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, Southern University of Science and Technology, Shenzhen 518055, China
raw_author_name: Xiao Wei Sun
raw_affiliation_strings: Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, and Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, Southern University of Science and Technology, Shenzhen 518055, China