Design rule for morphotropic phase boundary formation in Hf-based material system with high permittivity, low leakage and low thermal budget
Year: 2025
Type: article
Language: en
Topic: Ferroelectric and Negative Capacitance Devices
Authors and affiliations:
raw_author_name: Maokun Wu
raw_affiliation_strings: National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, China
raw_author_name: Sheng Ye
raw_affiliation_strings: National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, China
raw_author_name: Xuepei Wang
raw_affiliation_strings: National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, China
raw_author_name: Jinhao Liu
raw_affiliation_strings: National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, China
raw_author_name: Yilin Hu
raw_affiliation_strings: National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, China
raw_author_name: Haobo Lin
raw_affiliation_strings: National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, China
raw_author_name: Boyao Cui
raw_affiliation_strings: National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, China
raw_author_name: Yichen Wen
raw_affiliation_strings: National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, China
raw_author_name: Yishan Wu
raw_affiliation_strings: National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, China
raw_author_name: Ting Zhang
raw_affiliation_strings: National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, China
raw_author_name: Hong Dong
raw_affiliation_strings: Department of Electronic Science and Engineering, and Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Nankai University, Tianjin, China
raw_author_name: Feng Lu
raw_affiliation_strings: Department of Electronic Science and Engineering, and Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Nankai University, Tianjin, China
raw_author_name: Wei-Hua Wang
raw_affiliation_strings: Department of Electronic Science and Engineering, and Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Nankai University, Tianjin, China
raw_author_name: Pengpeng Ren
raw_affiliation_strings: National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, China
raw_author_name: Hong-Liang Lu
raw_affiliation_strings: The State Key Laboratory of ASIC and System, School of Microelectronics, Shanghai Institute of Intelligent Electronics and Systems, Fudan University, Shanghai, China
raw_author_name: Zhongming Liu
raw_affiliation_strings: Changxin Memory Technologies, Hefei, Anhui, China
raw_author_name: Runsheng Wang
raw_affiliation_strings: School of Integrated Circuits, Peking University, Beijing, China
raw_author_name: Zhigang Ji
raw_affiliation_strings: National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, China