Hydride Vapor Phase Epitaxy Flow Field Design and Uniformity Optimization for 4-in. Gallium Nitride Crystal Substrates
Year: 2025
Type: article
Language: en
Topic: GaN-based semiconductor devices and materials
Authors and affiliations:
raw_author_name: Qingbin Liu
raw_affiliation_strings: Institute of Novel Semiconductors, State Key Lab of Crystal Materials
Shandong University
Institute of Novel Semiconductors, State Key Lab of Crystal Materials, Shandong University, Jinan 250100, P. R. China
raw_author_name: Dong Wang
raw_affiliation_strings: Jinan Institute of Supercomputing Technology
Jinan Institute of Supercomputing Technology, Jinan 251013, P. R. China
raw_author_name: Zhanguo Qi
raw_affiliation_strings: Institute of Novel Semiconductors, State Key Lab of Crystal Materials
Shandong University
Institute of Novel Semiconductors, State Key Lab of Crystal Materials, Shandong University, Jinan 250100, P. R. China
raw_author_name: Zhengtang Yang
raw_affiliation_strings: Institute of Novel Semiconductors, State Key Lab of Crystal Materials
Shandong University
Institute of Novel Semiconductors, State Key Lab of Crystal Materials, Shandong University, Jinan 250100, P. R. China
raw_author_name: Defu Sun
raw_affiliation_strings: Institute of Novel Semiconductors, State Key Lab of Crystal Materials
Shandong University
Institute of Novel Semiconductors, State Key Lab of Crystal Materials, Shandong University, Jinan 250100, P. R. China
raw_author_name: Kaize Jiang
raw_affiliation_strings: Institute of Novel Semiconductors, State Key Lab of Crystal Materials
Shandong University
Institute of Novel Semiconductors, State Key Lab of Crystal Materials, Shandong University, Jinan 250100, P. R. China
raw_author_name: Qiubo Li
raw_affiliation_strings: Institute of Novel Semiconductors, State Key Lab of Crystal Materials
Shandong Crystal GaN Semiconductor Co., Ltd
Shandong University
Shandong Crystal GaN Semiconductor Co., Ltd, Jinan 250100, PR China
Institute of Novel Semiconductors, State Key Lab of Crystal Materials, Shandong University, Jinan 250100, P. R. China
raw_author_name: Zhongxin Wang
raw_affiliation_strings: Institute of Novel Semiconductors, State Key Lab of Crystal Materials
Shandong Crystal GaN Semiconductor Co., Ltd
Shandong University
Shandong Crystal GaN Semiconductor Co., Ltd, Jinan 250100, PR China
Institute of Novel Semiconductors, State Key Lab of Crystal Materials, Shandong University, Jinan 250100, P. R. China
raw_author_name: Xiangang Xu
raw_affiliation_strings: Institute of Novel Semiconductors, State Key Lab of Crystal Materials
Shandong University
Institute of Novel Semiconductors, State Key Lab of Crystal Materials, Shandong University, Jinan 250100, P. R. China
raw_author_name: Lei Zhang
raw_affiliation_strings: Institute of Novel Semiconductors, State Key Lab of Crystal Materials
Shandong Crystal GaN Semiconductor Co., Ltd
Shandong Research Institute of Industrial Technology
Shandong University
Shenzhen Research Institute of Shandong University
Shenzhen Research Institute of Shandong University, Shenzhen 518000, P. R. China
Institute of Novel Semiconductors, State Key Lab of Crystal Materials, Shandong University, Jinan 250100, P. R. China
Shandong Crystal GaN Semiconductor Co., Ltd, Jinan 250100, PR China
raw_author_name: Shouzhi Wang
raw_affiliation_strings: Institute of Novel Semiconductors, State Key Lab of Crystal Materials
Shandong Crystal GaN Semiconductor Co., Ltd
Shandong University
Shenzhen Research Institute of Shandong University
Shenzhen Research Institute of Shandong University, Shenzhen 518000, P. R. China
Institute of Novel Semiconductors, State Key Lab of Crystal Materials, Shandong University, Jinan 250100, P. R. China
Shandong Crystal GaN Semiconductor Co., Ltd, Jinan 250100, PR China