Tetrachromatic optoelectronic transistor with multi-dimensional information processing functionality for in-sensor motion perception
Year: 2025
Type: article
Language: en
Topic: Advanced Memory and Neural Computing
Authors and affiliations:
raw_author_name: Wanxin Huang
raw_affiliation_strings: State Key Laboratory of Flexible Electronics (LoFE) & Jiangsu Key Laboratory of Neuromorphic Electronic Materials and Devices, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications , Nanjing 210023,
State Key Laboratory of Flexible Electronics (LoFE) & Jiangsu Key Laboratory of Neuromorphic Electronic Materials and Devices, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, Nanjing 210023, China
raw_author_name: Yiru Wang
raw_affiliation_strings: State Key Laboratory of Flexible Electronics (LoFE) & Jiangsu Key Laboratory of Neuromorphic Electronic Materials and Devices, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications , Nanjing 210023,
State Key Laboratory of Flexible Electronics (LoFE) & Jiangsu Key Laboratory of Neuromorphic Electronic Materials and Devices, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, Nanjing 210023, China
raw_author_name: Shanshuo Liu
raw_affiliation_strings: State Key Laboratory of Flexible Electronics (LoFE) & Jiangsu Key Laboratory of Neuromorphic Electronic Materials and Devices, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications , Nanjing 210023,
State Key Laboratory of Flexible Electronics (LoFE) & Jiangsu Key Laboratory of Neuromorphic Electronic Materials and Devices, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, Nanjing 210023, China
raw_author_name: Jianyu Ming
raw_affiliation_strings: State Key Laboratory of Flexible Electronics (LoFE) & Jiangsu Key Laboratory of Neuromorphic Electronic Materials and Devices, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications , Nanjing 210023,
State Key Laboratory of Flexible Electronics (LoFE) & Jiangsu Key Laboratory of Neuromorphic Electronic Materials and Devices, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, Nanjing 210023, China
raw_author_name: Yannan Xie
raw_affiliation_strings: State Key Laboratory of Flexible Electronics (LoFE) & Jiangsu Key Laboratory of Neuromorphic Electronic Materials and Devices, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications , Nanjing 210023,
State Key Laboratory of Flexible Electronics (LoFE) & Jiangsu Key Laboratory of Neuromorphic Electronic Materials and Devices, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, Nanjing 210023, China
raw_author_name: Li Gao
raw_affiliation_strings: State Key Laboratory of Flexible Electronics (LoFE) & Jiangsu Key Laboratory of Neuromorphic Electronic Materials and Devices, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications , Nanjing 210023,
State Key Laboratory of Flexible Electronics (LoFE) & Jiangsu Key Laboratory of Neuromorphic Electronic Materials and Devices, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, Nanjing 210023, China
raw_author_name: Linghai Xie
raw_affiliation_strings: State Key Laboratory of Flexible Electronics (LoFE) & Jiangsu Key Laboratory of Neuromorphic Electronic Materials and Devices, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications , Nanjing 210023,
State Key Laboratory of Flexible Electronics (LoFE) & Jiangsu Key Laboratory of Neuromorphic Electronic Materials and Devices, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, Nanjing 210023, China
raw_author_name: Haifeng Ling
raw_affiliation_strings: State Key Laboratory of Flexible Electronics (LoFE) & Jiangsu Key Laboratory of Neuromorphic Electronic Materials and Devices, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications , Nanjing 210023,
State Key Laboratory of Flexible Electronics (LoFE) & Jiangsu Key Laboratory of Neuromorphic Electronic Materials and Devices, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, Nanjing 210023, China