Subthreshold Schottky-barrier transistor based on monolayer molybdenum disulfide
Year: 2025
Type: article
Language: en
Topic: Thin-Film Transistor Technologies
Authors and affiliations:
raw_author_name: Menggan Liu
raw_affiliation_strings: State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
University of Chinese Academy of Sciences, Beijing, China
raw_author_name: Jiebin Niu
raw_affiliation_strings: State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
University of Chinese Academy of Sciences, Beijing, China
raw_author_name: Guanhua Yang
raw_affiliation_strings: State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China. yangguanhua@ime.ac.cn
University of Chinese Academy of Sciences, Beijing, China. yangguanhua@ime.ac.cn
State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
University of Chinese Academy of Sciences, Beijing, China
raw_author_name: Rikang Zhao
raw_affiliation_strings: State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
University of Chinese Academy of Sciences, Beijing, China
raw_author_name: Kaifei Chen
raw_affiliation_strings: State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
University of Chinese Academy of Sciences, Beijing, China
raw_author_name: Wendong Lu
raw_affiliation_strings: State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
raw_author_name: Fuxi Liao
raw_affiliation_strings: State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
raw_author_name: Zhenhua Wu
raw_affiliation_strings: State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
University of Chinese Academy of Sciences, Beijing, China
raw_author_name: Chen Jiang
raw_affiliation_strings: The Department of Electronic Engineering, BNRist, Tsinghua University, Beijing, China
raw_author_name: Di Geng
raw_affiliation_strings: State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
University of Chinese Academy of Sciences, Beijing, China
raw_author_name: Nianduan Lu
raw_affiliation_strings: State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
University of Chinese Academy of Sciences, Beijing, China
raw_author_name: Arokia Nathan
raw_affiliation_strings: Darwin College, Cambridge University, Silver Street, Cambridge, UK. an299@cam.ac.uk
Darwin College, Cambridge University, Silver Street, Cambridge, UK
raw_author_name: Ling Li
raw_affiliation_strings: State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China. lingli@ime.ac.cn
University of Chinese Academy of Sciences, Beijing, China. lingli@ime.ac.cn
University of Chinese Academy of Sciences, Beijing, China
State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
raw_author_name: Ming Liu
raw_affiliation_strings: State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
University of Chinese Academy of Sciences, Beijing, China