Construction of polar topological nanodevices for neuromorphic computing
Year: 2025
Type: article
Language: en
Topic: Ferroelectric and Negative Capacitance Devices
Authors and affiliations:
raw_author_name: Guo Tian
raw_affiliation_strings: Department of Applied Physics, Hong Kong Polytechnic University 2 , Hong Kong,
Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University 1 , Guangzhou 510006,
raw_author_name: Wentao Shuai
raw_affiliation_strings: Department of Applied Physics, Hong Kong Polytechnic University 2 , Hong Kong,
raw_author_name: Wenjie Li
raw_affiliation_strings: Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University 1 , Guangzhou 510006,
raw_author_name: Zhiqing Song
raw_affiliation_strings: Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University 1 , Guangzhou 510006,
raw_author_name: Jiaqi Zhang
raw_affiliation_strings: Department of Applied Physics, Hong Kong Polytechnic University 2 , Hong Kong,
raw_author_name: Yihang Guo
raw_affiliation_strings: Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University 1 , Guangzhou 510006,
raw_author_name: Houlin Zhou
raw_affiliation_strings: Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University 1 , Guangzhou 510006,
raw_author_name: Shuoshuo Ma
raw_affiliation_strings: Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University 1 , Guangzhou 510006,
raw_author_name: Jianbiao Xian
raw_affiliation_strings: Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University 1 , Guangzhou 510006,
raw_author_name: Songhua Cai
raw_affiliation_strings: Department of Applied Physics, Hong Kong Polytechnic University 2 , Hong Kong,
raw_author_name: Zhen Fan
raw_affiliation_strings: Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University 1 , Guangzhou 510006,
raw_author_name: Minghui Qin
raw_affiliation_strings: Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University 1 , Guangzhou 510006,
raw_author_name: Ji-Yan Dai
raw_affiliation_strings: Department of Applied Physics, Hong Kong Polytechnic University 2 , Hong Kong,
raw_author_name: Jun-Ming Liu
raw_affiliation_strings: Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University 1 , Guangzhou 510006,
Laboratory of Solid-State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University 3 , Nanjing 210093,
raw_author_name: Xingsen Gao
raw_affiliation_strings: Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University 1 , Guangzhou 510006,