1000 V, 10 MHz Voltage Multiplier Based on Monolithically Integrated GaN-on-Sapphire Diode Bridge IC
Year: 2025
Type: article
Topic: GaN-based semiconductor devices and materials
Authors and affiliations:
raw_author_name: Zineng Yang
raw_affiliation_strings: Centre for Advanced Semiconductors and Integrated Circuits and the Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong
Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong, China
raw_author_name: Xin Yang
raw_affiliation_strings: Centre for Advanced Semiconductors and Integrated Circuits and the Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong
Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong, China
raw_author_name: Hehe Gong
raw_affiliation_strings: Centre for Advanced Semiconductors and Integrated Circuits and the Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong
Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong, China
raw_author_name: Hongchang Cui
raw_affiliation_strings: Centre for Advanced Semiconductors and Integrated Circuits and the Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong
Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong, China
raw_author_name: Hengbo Zhang
raw_affiliation_strings: Centre for Advanced Semiconductors and Integrated Circuits and the Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong
Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong, China
raw_author_name: Ning Yan
raw_affiliation_strings: Center for Power Electronics Systems (CPES), Virginia Polytechnic Institute and State University, Blacksburg, VA, USA
raw_author_name: Xipei Yu
raw_affiliation_strings: Center for Power Electronics Systems (CPES), Virginia Polytechnic Institute and State University, Blacksburg, VA, USA
raw_author_name: Yuan Qin
raw_affiliation_strings: Center for Power Electronics Systems (CPES), Virginia Polytechnic Institute and State University, Blacksburg, VA, USA
raw_author_name: Yibo Wang
raw_affiliation_strings: City University of Hong Kong, Hong Kong
City University of Hong Kong, Hong Kong, China
raw_author_name: Xiaosheng Wang
raw_affiliation_strings: City University of Hong Kong, Hong Kong
City University of Hong Kong, Hong Kong, China
raw_author_name: Chaoqiang Jiang
raw_affiliation_strings: City University of Hong Kong, Hong Kong
City University of Hong Kong, Hong Kong, China
raw_author_name: Han Wang
raw_affiliation_strings: Centre for Advanced Semiconductors and Integrated Circuits and the Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong
Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong, China
raw_author_name: Dong Dong
raw_affiliation_strings: Center for Power Electronics Systems (CPES), Virginia Polytechnic Institute and State University, Blacksburg, VA, USA
raw_author_name: Qiang Li
raw_affiliation_strings: Center for Power Electronics Systems (CPES), Virginia Polytechnic Institute and State University, Blacksburg, VA, USA
raw_author_name: Yuhao Zhang
raw_affiliation_strings: Centre for Advanced Semiconductors and Integrated Circuits and the Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong
Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong, China