DFT coupled with NEGF study of N-type MOSFET based on 2D Bi <sub>2</sub> C <sub>3</sub> semiconductor
Year: 2025
Type: article
Language: en
Topic: 2D Materials and Applications
Authors and affiliations:
raw_author_name: Yongjun Huang
raw_affiliation_strings: Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
Nanjing University of Science and Technology, College of Material Science and Engineering, Nanjing, 210094, CHINA
raw_author_name: Jialin Yang
raw_affiliation_strings: Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
Nanjing University of Science and Technology, College of Material Science and Engineering, Nanjing, 210094, CHINA
raw_author_name: Weicong Sun
raw_affiliation_strings: Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
Nanjing University of Science and Technology, College of Material Science and Engineering, Nanjing, 210094, CHINA
raw_author_name: Hengze Qu
raw_affiliation_strings: Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
Nanjing University of Science and Technology, College of Material Science and Engineering, Nanjing, 210094, CHINA
raw_author_name: Chuyao Chen
raw_affiliation_strings: Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
Nanjing University of Science and Technology, College of Material Science and Engineering, Nanjing, 210094, CHINA
raw_author_name: Huipu Wang
raw_affiliation_strings: Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
Nanjing University of Science and Technology, College of Material Science and Engineering, Nanjing, 210094, CHINA
raw_author_name: Jia Dong
raw_affiliation_strings: Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
Nanjing University of Science and Technology, College of Material Science and Engineering, Nanjing, 210094, CHINA
raw_author_name: Xiaoqin Shi
raw_affiliation_strings: Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
Nanjing University of Science and Technology, College of Material Science and Engineering, Nanjing, 210094, CHINA
raw_author_name: Shengli Zhang
raw_affiliation_strings: Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
Nanjing University of Science and Technology, College of Material Science and Engineering, Nanjing, Jiangsu, 210094, CHINA