TCAD Investigation on a Novel SiC Trench MOSFET With Integrated N <sup>+</sup> -PolySi/SiC Heterojunction Diode for Improved Third-Quadrant and High-Temperature Performances
Year: 2025
Type: article
Topic: Silicon Carbide Semiconductor Technologies
Authors and affiliations:
raw_author_name: Bo Yi
raw_affiliation_strings: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
School of Integrated Circuit Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
raw_author_name: Gaolei Zhang
raw_affiliation_strings: College of Electronics Engineering, Chongqing University of Posts and Telecommunications, Chongqing, China
raw_author_name: Xinyi Wu
raw_affiliation_strings: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
School of Integrated Circuit Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
raw_author_name: Huan Li
raw_affiliation_strings: China Zhenhua Group Yongguang Electronics Company Ltd., Guiyang, China
China ZhenHua Group YongGuang Electronics Company Ltd, Guiyang, China
raw_author_name: Junji Cheng
raw_affiliation_strings: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
School of Integrated Circuit Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
raw_author_name: Haimeng Huang
raw_affiliation_strings: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
School of Integrated Circuit Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
raw_author_name: Moufu Kong
raw_affiliation_strings: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
School of Integrated Circuit Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
raw_author_name: Hongqiang Yang
raw_affiliation_strings: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
School of Integrated Circuit Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China