A Ka‐Band GaN low‐noise amplifier monolithic microwave integrated circuit using external source interconnect for gate‐side parasitic suppression
Year: 2025
Type: article
Language: en
Topic: GaN-based semiconductor devices and materials
Authors and affiliations:
raw_author_name: Woojin Chang
raw_affiliation_strings: RF/Power Components Research Section Electronics and Telecommunications Research Institute (ETRI)  Daejeon Republic of Korea
RF/Power Components Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Republic of Korea
raw_author_name: Jong Yul Park
raw_affiliation_strings: RF/Power Components Research Section Electronics and Telecommunications Research Institute (ETRI)  Daejeon Republic of Korea
RF/Power Components Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Republic of Korea
raw_author_name: Kyu Jun Cho
raw_affiliation_strings: RF/Power Components Research Section Electronics and Telecommunications Research Institute (ETRI)  Daejeon Republic of Korea
RF/Power Components Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Republic of Korea
raw_author_name: Junhyung Jeong
raw_affiliation_strings: RF/Power Components Research Section Electronics and Telecommunications Research Institute (ETRI)  Daejeon Republic of Korea
RF/Power Components Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Republic of Korea
raw_author_name: Hong‐Gu Ji
raw_affiliation_strings: RF/Power Components Research Section Electronics and Telecommunications Research Institute (ETRI)  Daejeon Republic of Korea
RF/Power Components Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Republic of Korea
raw_author_name: Byoung‐Gue Min
raw_affiliation_strings: RF/Power Components Research Section Electronics and Telecommunications Research Institute (ETRI)  Daejeon Republic of Korea
RF/Power Components Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Republic of Korea
raw_author_name: Jong‐Min Lee
raw_affiliation_strings: RF/Power Components Research Section Electronics and Telecommunications Research Institute (ETRI)  Daejeon Republic of Korea
RF/Power Components Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Republic of Korea
raw_author_name: Junhyung Kim
raw_affiliation_strings: RF/Power Components Research Section Electronics and Telecommunications Research Institute (ETRI)  Daejeon Republic of Korea
RF/Power Components Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Republic of Korea
raw_author_name: Gyejung Lee
raw_affiliation_strings: RF/Power Components Research Section Electronics and Telecommunications Research Institute (ETRI)  Daejeon Republic of Korea
RF/Power Components Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Republic of Korea
raw_author_name: Dong Min Kang
raw_affiliation_strings: RF/Power Components Research Section Electronics and Telecommunications Research Institute (ETRI)  Daejeon Republic of Korea
RF/Power Components Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Republic of Korea