Single-crystalline BaTiO <sub>3</sub> -based ferroelectric capacitive memory via membrane transfer
Year: 2025
Type: article
Language: en
Topic: Ferroelectric and Negative Capacitance Devices
Authors and affiliations:
raw_author_name: Xinyuan Zhang
raw_affiliation_strings: Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
raw_author_name: Sangho Lee
raw_affiliation_strings: Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
raw_author_name: Jung-El Ryu
raw_affiliation_strings: Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
raw_author_name: Jun Min Suh
raw_affiliation_strings: Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, Republic of Korea
School of Transdisciplinary Innovations, Seoul National University, Seoul, Republic of Korea
raw_author_name: Tae-Hyeon Kim
raw_affiliation_strings: Department of Semiconductor Engineering, Seoul National University of Science &amp; Technology, Seoul, Republic of Korea
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA
Department of Semiconductor Engineering, Seoul National University of Science & Technology, Seoul, Republic of Korea
raw_author_name: Matthew R. Barone
raw_affiliation_strings: Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA
raw_author_name: Nicholas Andrew Parker
raw_affiliation_strings: Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA
raw_author_name: Giho Lee
raw_affiliation_strings: Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
raw_author_name: Ik-Jyae Kim
raw_affiliation_strings: Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea
raw_author_name: Injune Yeo
raw_affiliation_strings: School of Electrical Engineering, Chosun University, Gwangju, Republic of Korea
raw_author_name: Jiho Shin
raw_affiliation_strings: Artie McFerrin Department of Chemical Engineering, Texas A&amp;M University, College Station, TX, USA
Artie McFerrin Department of Chemical Engineering, Texas A&M University, College Station, TX, USA
raw_author_name: Jang-Sik Lee
raw_affiliation_strings: Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea
raw_author_name: Darrell G. Schlom
raw_affiliation_strings: Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA
Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, USA
Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Germany
raw_author_name: Celesta S. Chang
raw_affiliation_strings: Department of Physics and Astronomy, Seoul National University, Seoul, Republic of Korea
raw_author_name: Jae-sun Seo
raw_affiliation_strings: School of Electrical and Computer Engineering, Cornell Tech, New York, NY, USA
raw_author_name: Shimeng Yu
raw_affiliation_strings: School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA
raw_author_name: Min-Kyu Song
raw_affiliation_strings: School of Electrical Engineering, Korea University, Seoul, Republic of Korea
raw_author_name: Jeehwan Kim
raw_affiliation_strings: Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, USA
Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA