Preparation and characterization of zirconium-doped indium oxide conducting films with high infrared transparency
Year: 2025
Type: article
Language: en
Topic: ZnO doping and properties
Authors and affiliations:
raw_author_name: Hanpeng Liu
raw_affiliation_strings: School of Integrated Circuit Science and Engineering, State Key Laboratory of Crystal Materials, Engineering Research Center of Optoelectronic Devices and Communication Technology, Tianjin University of Technology 1 , Tianjin 300384,
raw_author_name: Liang Wang
raw_affiliation_strings: School of Integrated Circuit Science and Engineering, State Key Laboratory of Crystal Materials, Engineering Research Center of Optoelectronic Devices and Communication Technology, Tianjin University of Technology 1 , Tianjin 300384,
raw_author_name: Lin'an He
raw_affiliation_strings: School of Integrated Circuit Science and Engineering, State Key Laboratory of Crystal Materials, Engineering Research Center of Optoelectronic Devices and Communication Technology, Tianjin University of Technology 1 , Tianjin 300384,
raw_author_name: Wei Mi
raw_affiliation_strings: School of Integrated Circuit Science and Engineering, State Key Laboratory of Crystal Materials, Engineering Research Center of Optoelectronic Devices and Communication Technology, Tianjin University of Technology 1 , Tianjin 300384,
raw_author_name: Di Wang
raw_affiliation_strings: School of Integrated Circuit Science and Engineering, State Key Laboratory of Crystal Materials, Engineering Research Center of Optoelectronic Devices and Communication Technology, Tianjin University of Technology 1 , Tianjin 300384,
raw_author_name: Liwei Zhou
raw_affiliation_strings: School of Integrated Circuit Science and Engineering, State Key Laboratory of Crystal Materials, Engineering Research Center of Optoelectronic Devices and Communication Technology, Tianjin University of Technology 1 , Tianjin 300384,
raw_author_name: Yan Zhu
raw_affiliation_strings: School of Integrated Circuit Science and Engineering, State Key Laboratory of Crystal Materials, Engineering Research Center of Optoelectronic Devices and Communication Technology, Tianjin University of Technology 1 , Tianjin 300384,
raw_author_name: Juan Wang
raw_affiliation_strings: School of Integrated Circuit Science and Engineering, State Key Laboratory of Crystal Materials, Engineering Research Center of Optoelectronic Devices and Communication Technology, Tianjin University of Technology 1 , Tianjin 300384,
raw_author_name: Xingcheng Zhang
raw_affiliation_strings: Institute of Microelectronics of the Chinese Academy of Science 2 , Beijing 100029,
raw_author_name: Rongrong Chen
raw_affiliation_strings: School of Integrated Circuit Science and Engineering, State Key Laboratory of Crystal Materials, Engineering Research Center of Optoelectronic Devices and Communication Technology, Tianjin University of Technology 1 , Tianjin 300384,
raw_author_name: Kai Niu
raw_affiliation_strings: Tianjin Infraytech Co., LTD 3 , Tianjin 300384,
raw_author_name: Jinshi Zhao
raw_affiliation_strings: School of Integrated Circuit Science and Engineering, State Key Laboratory of Crystal Materials, Engineering Research Center of Optoelectronic Devices and Communication Technology, Tianjin University of Technology 1 , Tianjin 300384,