Interfacial Charge-Injection-Induced Ferroelectric Phase Instability in Epitaxial Yttrium-Doped Hafnium Oxide Films
Year: 2025
Type: article
Language: en
Topic: Ferroelectric and Negative Capacitance Devices
Authors and affiliations:
raw_author_name: Jie Tu
raw_affiliation_strings: East China Normal University
Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics
Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, 200241 Shanghai, China
raw_author_name: Chengfeng Pan
raw_affiliation_strings: East China Normal University
Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics
Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, 200241 Shanghai, China
raw_author_name: Xiaoyu Qiu
raw_affiliation_strings: East China Normal University
Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics
Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, 200241 Shanghai, China
raw_author_name: Xiang Xu
raw_affiliation_strings: East China Normal University
Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics
Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, 200241 Shanghai, China
raw_author_name: Yingjia Li
raw_affiliation_strings: East China Normal University
Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics
Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, 200241 Shanghai, China
raw_author_name: Zijian Chen
raw_affiliation_strings: East China Normal University
Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics
raw_author_name: Yujie Zhou
raw_affiliation_strings: East China Normal University
Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics
Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, 200241 Shanghai, China
raw_author_name: Chen Zhou
raw_affiliation_strings: East China Normal University
Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics
raw_author_name: Zhao Guan
raw_affiliation_strings: East China Normal University
Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics
raw_author_name: Yonghui Zheng
raw_affiliation_strings: East China Normal University
Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics
Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, 200241 Shanghai, China
raw_author_name: Yuning Wu
raw_affiliation_strings: East China Normal University
Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics
Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, 200241 Shanghai, China
raw_author_name: Ni Zhong
raw_affiliation_strings: East China Normal University
Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics
Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, 200241 Shanghai, China
raw_author_name: Pinghua Xiang
raw_affiliation_strings: East China Normal University
Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics
raw_author_name: Binbin Chen
raw_affiliation_strings: East China Normal University
Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics
Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, 200241 Shanghai, China