A Programmable In-Situ Logic-in-Memory With Full Boolean and Arithmetic Functions Through Voltage-Gated Spin-Orbit Torque
Year: 2025
Type: article
Topic: Magnetic properties of thin films
Authors and affiliations:
raw_author_name: Zhaochun Liu
raw_affiliation_strings: Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China
School of Integrated Circuit Science and Engineering, Beihang University, Fert Beijing Institute, Beijing, China
raw_author_name: Jiaqi Lu
raw_affiliation_strings: Academy of Military Sciences, National Innovation Institute of Defense Technology, Beijing, China
National Innovation Institute of Defense Technology, Academy of Military Sciences, Beijing, China
raw_author_name: Jiahao Liu
raw_affiliation_strings: Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China
School of Integrated Circuit Science and Engineering, Beihang University, Fert Beijing Institute, Beijing, China
raw_author_name: Weixiang Li
raw_affiliation_strings: Academy of Military Sciences, National Innovation Institute of Defense Technology, Beijing, China
National Innovation Institute of Defense Technology, Academy of Military Sciences, Beijing, China
raw_author_name: Xibo Gui
raw_affiliation_strings: Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China
School of Integrated Circuit Science and Engineering, Beihang University, Fert Beijing Institute, Beijing, China
raw_author_name: Shiyang Lu
raw_affiliation_strings: Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China
School of Integrated Circuit Science and Engineering, Beihang University, Fert Beijing Institute, Beijing, China
raw_author_name: Hongchao Zhang
raw_affiliation_strings: Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China
School of Integrated Circuit Science and Engineering, Beihang University, Fert Beijing Institute, Beijing, China
raw_author_name: Kaihua Cao
raw_affiliation_strings: Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China
School of Integrated Circuit Science and Engineering, Beihang University, Fert Beijing Institute, Beijing, China
raw_author_name: Wuhong Xue
raw_affiliation_strings: School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan, China
raw_author_name: Xiaohong Xu
raw_affiliation_strings: School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan, China
raw_author_name: Weisheng Zhao
raw_affiliation_strings: Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China
School of Integrated Circuit Science and Engineering, Beihang University, Fert Beijing Institute, Beijing, China
raw_author_name: Shouzhong Peng
raw_affiliation_strings: Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China
School of Integrated Circuit Science and Engineering, Beihang University, Fert Beijing Institute, Beijing, China