Growth and analysis of low-resistivity polycrystalline SiC using the PVT method
Year: 2025
Type: article
Language: en
Topic: Silicon Carbide Semiconductor Technologies
Authors and affiliations:
raw_author_name: Anqi Wang
raw_affiliation_strings: Institute of Advanced Semiconductors, Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, Zhejiang 311215, China
State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
raw_author_name: Fan Wang
raw_affiliation_strings: Institute of Advanced Semiconductors, Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, Zhejiang 311215, China
State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
raw_author_name: Binjie Xu
raw_affiliation_strings: Institute of Advanced Semiconductors, Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, Zhejiang 311215, China
State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
raw_author_name: Lingling Xuan
raw_affiliation_strings: Institute of Advanced Semiconductors, Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, Zhejiang 311215, China
State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
raw_author_name: Shengou Lu
raw_affiliation_strings: Institute of Advanced Semiconductors, Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, Zhejiang 311215, China
State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
raw_author_name: Xuefeng Han
raw_affiliation_strings: Institute of Advanced Semiconductors, Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, Zhejiang 311215, China
State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
raw_author_name: Deren Yang
raw_affiliation_strings: Institute of Advanced Semiconductors, Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, Zhejiang 311215, China
State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
raw_author_name: Xiaodong Pi
raw_affiliation_strings: Institute of Advanced Semiconductors, Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, Zhejiang 311215, China
State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China