Adverse Effects of Stacking Mismatch Boundaries on GaN Optoelectronic Properties
Year: 2025
Type: article
Language: en
Topic: GaN-based semiconductor devices and materials
Authors and affiliations:
raw_author_name: Jiaxing Wang
raw_affiliation_strings: State Key Laboratory of Materials Low‐Carbon Recycling, &amp; College of Material Science and Engineering Beijing University of Technology  Beijing 100124 China
State Key Laboratory of Materials Low‐Carbon Recycling, &amp; College of Material Science and Engineering Beijing University of Technology Beijing 100124 China
raw_author_name: Jingyang Zhang
raw_affiliation_strings: State Key Laboratory of Materials Low‐Carbon Recycling, &amp; College of Material Science and Engineering Beijing University of Technology  Beijing 100124 China
State Key Laboratory of Materials Low‐Carbon Recycling, &amp; College of Material Science and Engineering Beijing University of Technology Beijing 100124 China
raw_author_name: Qinchi Yue
raw_affiliation_strings: State Key Laboratory of Materials Low‐Carbon Recycling, &amp; College of Material Science and Engineering Beijing University of Technology  Beijing 100124 China
State Key Laboratory of Materials Low‐Carbon Recycling, &amp; College of Material Science and Engineering Beijing University of Technology Beijing 100124 China
raw_author_name: Rui Zhang
raw_affiliation_strings: State Key Laboratory of Materials Low‐Carbon Recycling, &amp; College of Material Science and Engineering Beijing University of Technology  Beijing 100124 China
State Key Laboratory of Materials Low‐Carbon Recycling, &amp; College of Material Science and Engineering Beijing University of Technology Beijing 100124 China
raw_author_name: Changhao Wang
raw_affiliation_strings: State Key Laboratory of Materials Low‐Carbon Recycling, &amp; College of Material Science and Engineering Beijing University of Technology  Beijing 100124 China
State Key Laboratory of Materials Low‐Carbon Recycling, &amp; College of Material Science and Engineering Beijing University of Technology Beijing 100124 China
raw_author_name: Xianlin Qu
raw_affiliation_strings: Center for Microscopy and Analysis Nanjing University of Aeronautics and Astronautics  Nanjing 211106 China
Center for Microscopy and Analysis, Nanjing University of Aeronautics and Astronautics, Nanjing, 211106 China
raw_author_name: Zhiyang Xu
raw_affiliation_strings: School of Physics and Optoelectronic Engineering Beijing University of Technology  Beijing 100124 China
School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing, 100124 China
raw_author_name: Ruzhi Wang
raw_affiliation_strings: State Key Laboratory of Materials Low‐Carbon Recycling, &amp; College of Material Science and Engineering Beijing University of Technology  Beijing 100124 China
State Key Laboratory of Materials Low‐Carbon Recycling, &amp; College of Material Science and Engineering Beijing University of Technology Beijing 100124 China
raw_author_name: Kun Zheng
raw_affiliation_strings: State Key Laboratory of Materials Low‐Carbon Recycling, &amp; College of Material Science and Engineering Beijing University of Technology  Beijing 100124 China
State Key Laboratory of Materials Low‐Carbon Recycling, &amp; College of Material Science and Engineering Beijing University of Technology Beijing 100124 China