High Gate Reliability and Breakdown Voltage p-GaN HEMTs Based on Post-Annealing-Free Oxygen Plasma Treatment
Year: 2025
Type: article
Topic: GaN-based semiconductor devices and materials
Authors and affiliations:
raw_author_name: Zifeng Qu
raw_affiliation_strings: Department of Electrical and Electronic Engineering, School of Advanced Technology, Xi&#x2019;an Jiaotong-Liverpool University, Suzhou, China
raw_author_name: Jiachen Duan
raw_affiliation_strings: Department of Electrical and Electronic Engineering, School of Advanced Technology, Xi&#x2019;an Jiaotong-Liverpool University, Suzhou, China
raw_author_name: Ang Li
raw_affiliation_strings: Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
Suzhou Institute of Nano-Tech and Nano-Bionics, Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou, China
raw_author_name: Xuanming Zhang
raw_affiliation_strings: Department of Electrical and Electronic Engineering, School of Advanced Technology, Xi&#x2019;an Jiaotong-Liverpool University, Suzhou, China
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
raw_author_name: Hao Tian
raw_affiliation_strings: Department of Electrical and Electronic Engineering, School of Advanced Technology, Xi&#x2019;an Jiaotong-Liverpool University, Suzhou, China
raw_author_name: Jingyue Wu
raw_affiliation_strings: School of Advanced Technology, Xi&#x2019;an Jiaotong-Liverpool University, Suzhou, China
raw_author_name: Qiyi Guo
raw_affiliation_strings: School of Advanced Technology, Xi&#x2019;an Jiaotong-Liverpool University, Suzhou, China
raw_author_name: Qiyuan Zhang
raw_affiliation_strings: School of Advanced Technology, Xi&#x2019;an Jiaotong-Liverpool University, Suzhou, China
raw_author_name: Yizhou Jiang
raw_affiliation_strings: Department of Electrical and Electronic Engineering, School of Advanced Technology, Xi&#x2019;an Jiaotong-Liverpool University, Suzhou, China
raw_author_name: Ningyu Luo
raw_affiliation_strings: Department of Electrical and Electronic Engineering, School of Advanced Technology, Xi&#x2019;an Jiaotong-Liverpool University, Suzhou, China
raw_author_name: Xiaodong Zhang
raw_affiliation_strings: Department of Electrical and Electronic Engineering, School of Advanced Technology, Xi&#x2019;an Jiaotong-Liverpool University, Suzhou, China
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
Suzhou Institute of Nano-Tech and Nano-Bionics, Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou, China
raw_author_name: Guohao Yu
raw_affiliation_strings: Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
Suzhou Institute of Nano-Tech and Nano-Bionics, Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou, China
raw_author_name: Chao Long
raw_affiliation_strings: Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, U.K
raw_author_name: Wen Liu
raw_affiliation_strings: Department of Electrical and Electronic Engineering, School of Advanced Technology, Xi&#x2019;an Jiaotong-Liverpool University, Suzhou, China
raw_author_name: Huiqing Wen
raw_affiliation_strings: Department of Electrical and Electronic Engineering, School of Advanced Technology, Xi&#x2019;an Jiaotong-Liverpool University, Suzhou, China