Study on resistive switching characteristics of doped V2O5-X materials (X = metals Al, Ga and non-metal Si)
Year: 2025
Type: article
Language: en
Topic: Advanced Memory and Neural Computing
Authors and affiliations:
raw_author_name: Lijun He
raw_affiliation_strings: Chongqing Integrated Circuit Collaborative Innovation Center, No. 36 Xiyong Avenue, Shapingba District, Chongqing 400065, China
School of Integrated Circuits, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
raw_author_name: Yuhang Qin
raw_affiliation_strings: Chongqing Integrated Circuit Collaborative Innovation Center, No. 36 Xiyong Avenue, Shapingba District, Chongqing 400065, China
School of Integrated Circuits, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
raw_author_name: Yueyue Wu
raw_affiliation_strings: Chongqing Integrated Circuit Collaborative Innovation Center, No. 36 Xiyong Avenue, Shapingba District, Chongqing 400065, China
School of Integrated Circuits, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
raw_author_name: Liyan Wang
raw_affiliation_strings: College of Computer Science and Technology, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
raw_author_name: Mi Yu
raw_affiliation_strings: Chongqing Integrated Circuit Collaborative Innovation Center, No. 36 Xiyong Avenue, Shapingba District, Chongqing 400065, China
School of Integrated Circuits, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
raw_author_name: Li zhang
raw_affiliation_strings: Chongqing Integrated Circuit Collaborative Innovation Center, No. 36 Xiyong Avenue, Shapingba District, Chongqing 400065, China
School of Integrated Circuits, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
raw_author_name: Qijun Huang
raw_affiliation_strings: Chongqing Integrated Circuit Collaborative Innovation Center, No. 36 Xiyong Avenue, Shapingba District, Chongqing 400065, China
School of Integrated Circuits, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
raw_author_name: Sizhe Wang
raw_affiliation_strings: Chongqing Integrated Circuit Collaborative Innovation Center, No. 36 Xiyong Avenue, Shapingba District, Chongqing 400065, China
School of Integrated Circuits, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
raw_author_name: Cheng Mi
raw_affiliation_strings: Chongqing Integrated Circuit Collaborative Innovation Center, No. 36 Xiyong Avenue, Shapingba District, Chongqing 400065, China
School of Integrated Circuits, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
raw_author_name: Peixuan Yang
raw_affiliation_strings: Chongqing Integrated Circuit Collaborative Innovation Center, No. 36 Xiyong Avenue, Shapingba District, Chongqing 400065, China
School of Integrated Circuits, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
raw_author_name: Fuyu Yin
raw_affiliation_strings: Chongqing Integrated Circuit Collaborative Innovation Center, No. 36 Xiyong Avenue, Shapingba District, Chongqing 400065, China
School of Integrated Circuits, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
raw_author_name: Wenzhe Li
raw_affiliation_strings: Chongqing Integrated Circuit Collaborative Innovation Center, No. 36 Xiyong Avenue, Shapingba District, Chongqing 400065, China
School of Integrated Circuits, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
raw_author_name: Nan Zhang
raw_affiliation_strings: Chongqing Integrated Circuit Collaborative Innovation Center, No. 36 Xiyong Avenue, Shapingba District, Chongqing 400065, China
School of Integrated Circuits, Chongqing University of Posts and Telecommunications, Chongqing 400065, China