High-performance and high-reliability Ga2O3 Schottky barrier diodes enabled by double-side packaging integrated with microchannel cooling
Year: 2025
Type: article
Language: en
Topic: Ga2O3 and related materials
Authors and affiliations:
raw_author_name: Jiajun Zhou
raw_affiliation_strings: Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou, 510555, China
National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, Xidian University, Xi'an, 710071, China
raw_author_name: Xin Feng
raw_affiliation_strings: Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou, 510555, China
National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, Xidian University, Xi'an, 710071, China
raw_author_name: Weihang Zhang
raw_affiliation_strings: Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou, 510555, China
National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, Xidian University, Xi'an, 710071, China
raw_author_name: Pengfei Dong
raw_affiliation_strings: Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou, 510555, China
National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, Xidian University, Xi'an, 710071, China
raw_author_name: Xianhe Liu
raw_affiliation_strings: Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou, 510555, China
National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, Xidian University, Xi'an, 710071, China
raw_author_name: Zhihong Liu
raw_affiliation_strings: Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou, 510555, China
Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Faculty of Integrated Circuit, Xidian University, Xi'an, 710071, China
National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, Xidian University, Xi'an, 710071, China
raw_author_name: Hong Zhou
raw_affiliation_strings: Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou, 510555, China
Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Faculty of Integrated Circuit, Xidian University, Xi'an, 710071, China
National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, Xidian University, Xi'an, 710071, China
raw_author_name: Yue Hao
raw_affiliation_strings: Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou, 510555, China
Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Faculty of Integrated Circuit, Xidian University, Xi'an, 710071, China
National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, Xidian University, Xi'an, 710071, China
raw_author_name: Jincheng Zhang
raw_affiliation_strings: Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou, 510555, China
Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Faculty of Integrated Circuit, Xidian University, Xi'an, 710071, China
National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, Xidian University, Xi'an, 710071, China