First Demonstration of CFET Ring Oscillator and SRAM Bit-Cell Functionality at Gate Pitch Smaller Than 48 nm for Future Logic and SRAM Technology
Year: 2025
Type: article
Topic: Advancements in Semiconductor Devices and Circuit Design
Authors and affiliations:
raw_author_name: S. Liao
raw_affiliation_strings: R&#x0026;D, Taiwan Semiconductor Manufacturing Company,Hsinchu,Taiwan
raw_author_name: L. Yang
raw_affiliation_strings: R&#x0026;D, Taiwan Semiconductor Manufacturing Company,Hsinchu,Taiwan
raw_author_name: T.K. Chiu
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raw_author_name: W.X. You
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raw_author_name: T.Y. Wu
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raw_author_name: Y.C. Lee
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raw_author_name: W.D. Ho
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raw_author_name: H.Y. Hung
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raw_author_name: K. Elphick
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raw_author_name: Z.C. Lin
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raw_author_name: J.F. Hsu
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raw_author_name: K.F. Yang
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raw_author_name: C.H. Sha
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raw_author_name: G.R. Wang
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raw_author_name: C.M. Chang
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raw_author_name: R.F. Chen
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raw_author_name: T.W. Hsieh
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raw_author_name: I.F. Hu
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